Kyushu University Academic Staff Educational and Research Activities Database
List of Presentations
Taizoh SADOH Last modified date:2019.06.24

Associate Professor / Electronic Devices / Department of Electronics / Faculty of Information Science and Electrical Engineering


Presentations
1. Xiangsheng Gong, Chang Xu, and Taizoh Sadoh, Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation, 26th International Workshop on Active-Matrix Flatpanel Displays and Devices, 2019.07.
2. K. Imokawa, N. Tanaka, A. Suwa, D. Nakamura, T. Sadoh, T. Goto, H. Ikenoue, Low-temperature and low-cost excimer laser doping for poly-si thin-film transistor fabrication, SPIE Photonics West, Lase, Laser-based Micro- and Nanoprocessing XIII, 2019.02.
3. K. Yagi, M. Miyao and T. Sadoh, Low-Temperature Solid-Phase Crystallization of SiSn Films on Insulator, 14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14), 2018.10.
4. Hongmiao Gao, Masanobu Miyao, Taizoh Sadoh, N-Type Ge on Insulator by Low-Temperature Sb-Induced Layer Exchange Crystallization Combined with Ge Under-Layer Insertion, E-MRS, 2018 Fall Meeting, 2018.09.
5. Chang Xu, Masanobu Miyao, Taizoh Sadoh, High Carrier Mobility Sn-Doped Ge on Insulator by Solid-Phase Crystallization Combined with Si-Under-Layer Insertion, E-MRS, 2018 Fall Meeting, 2018.09.
6. N. Tanaka, K. Imokawa, A. Suwa, D. Nakamura, T. Sadoh, H. Ikenoue, Excimer Laser Doping of LTPS Thin Films for Printable Device Fabrication, 2018 International Conference on Solid-State Devices and Materials, 2018.09.
7. T. Sadoh, T. Sugino, K. Moto, R. Matsumura, H. Ikenoue, M. Miyao, Enhanced Growth of High Sn Concentration (Sn>=10%) GeSn on Insulator by Low Temperature (~170°C) Solid-Phase Crystallization Combined with Weak Laser Irradiation, 2018 International Conference on Solid-State Devices and Materials, 2018.09.
8. H. Gao, M. Miyao, T. Sadoh, Low-Temperature Formation of n-Type Ge on Insulator by Thickness-Modulated Sb-Induced Layer Exchange Crystallization Combined with Thin Ge Under-Layer Insertion, 2018 International Conference on Solid-State Devices and Materials, 2018.09.
9. Kaname Imokawa, Nozomu Tanaka, Akira Suwa, Daisuke Nakamura, Taizoh Sadoh, Tetsuya Goto, and Hiroshi Ikenoue, Characterization of Characterization of Excimer-Laser Doping of a Poly-Si Thin Film with a Phosphoric-Acid Coating for Thin-Film-Transistor Fabrication, 25th International Workshop on Active-Matrix Flatpanel Displays and Devices, 2018.07.
10. Kazuki Yagi and Taizoh Sadoh, Effect of film thickness on low temperature solid-phase crystallization of SiSn on insulator, 2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 2018.07.
11. Chang Xu, Hongmiao Gao, Masanobu Miyao, and Taizoh Sadoh, Effects of a-Si Layer Insertion on Solid-Phase Crystallization of Sn Doped Ge on Insulator, 2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 2018.07.
12. Hongmiao Gao and Taizoh Sadoh, Low-Temperature Formation of n-Ge/Insulator by Sb-Induced Layer Exchange Crystallization Combined with Ge Under-Layer Insertion, 2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 2018.07.
13. Hongmiao Gao, Masanobu Miyao, and Taizoh Sadoh, Low-Temperature Formation of n-Type Ge on Insulator by Sb-Induced Layer Exchange Crystallization, 11th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2018.02.
14. T. Sadoh, M. Miyao, and I. Tsunoda, Low-Temperature Crystallization of Group-IV Semiconductors on Insulator Using Catalysis, 11th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2018.02.
15. H. Gao, R. Aoki, M. Miyao, and T. Sadoh, Low-Temperature Sb-Induced Layer Exchange Crystallization for Slef-Limiting Formation of n-Type Ge/Insulator, 2017 International Conference on Solid-State Devices and Materials, 2017.09.
16. T. Sugino, K. Moto, R. Matsumura, H. Ikenoue, M. Miyao, and T. Sadoh, High Substitutional-Sn-Concentration GeSn-on-Insulator by Weak-Laser-Irradiation-Enhanced Solid-Phase Crystallization at Low-Temperature (~170°C), 2017 International Conference on Solid-State Devices and Materials, 2017.09.
17. T. Sugino, K. Moto, H. Ikenoue, M. Miyao, and T. Sadoh, Thickness-Dependent Substitutional-Sn-Concentration in GeSn-on-Insulator by Weak- Laser-Irradiation-Enhanced Solid-Phase Crystallization at Low-Temperature (180°C), 24th International Workshop on Active-Matrix Flatpanel Displays and Devices, 2017.07.
18. H. Gao, R. Aoki, M. Sasaki, M. Miyao, and T. Sadoh, Low-Temperature Formation of n-Type Ge/Insulator by Sb-Induced Layer Exchange Crystallization, 24th International Workshop on Active-Matrix Flatpanel Displays and Devices, 2017.07.
19. Nozomu Tanaka, Akira Suwa, Tetsuya Goto, Daisuke Nakamura, Taizoh Sadoh, Hiroshi Ikenoue, A Novel Method for Laser Doping of Poly-Si Thin Films Using XeF Excimer Laser Irradiation in Acid Solution, Lasers in Manufacturing Conference 2017, 2017.06.
20. H. Gao, R. Aoki, M. Sasaki, M. Miyao, and T. Sadoh, Formation of n-Type Ge on Insulator by Low-Temperature Sb-Induced Layer Exchange Crystallization, 17th International Workshop on Junction Technology 2017, 2017.06.
21. T. Sugino, K. Moto, H. Ikenoue, M. Miyao, and T. Sadoh, Weak-Laser-Irradiation-Enhanced Solid-Phase Crystallization of GeSn-on-Insulator at Low-Temperature (180°C) - Thickness-Dependent High Substitutional-Sn-Concentration -, 17th International Workshop on Junction Technology 2017, 2017.06.
22. M. Sasaki, Masanobu Miyao, Taizoh SADOH, Low-Temperature (~250°C) Growth of Large-Grain Sn-Doped Ge (100) on Insulator by Al-Induced Crystallization for Flexible Electronics, 10th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2017.02.
23. T. Sakai, Taizoh SADOH, Ryo Matsumura, Masanobu Miyao, Low-Temperature (<250°C) Lateral Crystallization of Sn-Doped Ge-on-Insulator Enhanced by Au Catalysis, 2016 MRS Falll Meeting, 2016.11.
24. K. Moto, Ryo Matsumura, Taizoh SADOH, Masanobu Miyao, Hiroshi Ikenoue, Pulsed Laser Annealing for Non-Thermal Equilibrium GeSn (Sn>10%) on Insulating Substrate, 2016 MRS Falll Meeting, 2016.11.
25. Taizoh SADOH, Y. Kai, K. Moto, Ryo Matsumura, Masanobu Miyao, High Carrier Mobility (~320 cm2/Vs) of Sn-Doped Poly-Ge on Insulator by Low-Temperature Solid-Phase Crystallization, 2016 MRS Falll Meeting, 2016.11.
26. K. Moto, Ryo Matsumura, Taizoh SADOH, Masanobu Miyao, Hiroshi Ikenoue, Cooling Rate Dependent High Substitutional Sn Concentration (>10%) in GeSn Crystals on Insulator by Pulsed Laser-Annealing, 230th ECS Meeting, 2016.10.
27. T. Sakai, Ryo Matsumura, Taizoh SADOH, Masanobu Miyao, Low-Temperature Formation of Sn-Doped Ge on Insulating Substrates by Metal-Induced Crystallization, 230th ECS Meeting, 2016.10.
28. Taizoh SADOH, R. Aoki, T. Tanaka, J.-H. Park, Masanobu Miyao, Low-Temperature Growth of Orientation-Controlled Large-Grain Ge-Rich SiGe on Insulator at Controlled-Position for Flexible Electronics , 230th ECS Meeting, 2016.10.
29. Ryo Matsumura, Kenta Moto, Y. Kai, Taizoh SADOH, Hiroshi Ikenoue, Masanobu Miyao, Thermally-Stable High Sn Concentration (~9%) GeSn on Insulator by Ultra-Low Temperature (~180°C) Solid-Phase Crystallization Triggered by Laser-Anneal Seeding, International Conference on Solid State Devices and Materials 2016, 2016.09.
30. T. Sakai, Taizoh SADOH, Ryo Matsumura, Masanobu Miyao, Low-Temperature Gold-Induced Lateral Crystallization of Sn-Doped Ge on Insulator for Flexible Electronics, International Conference on Solid State Devices and Materials 2016, 2016.09.
31. K. Moto, Taizoh SADOH, Y. Kai, Ryo Matsumura, Masanobu Miyao, Thickness-Controlled Low-Temperature (~380°C) Solid-Phase Crystallization of Sn-Doped Poly-Ge/Insulator for High Carrier Mobility (~320 cm2/Vs), International Conference on Solid State Devices and Materials 2016, 2016.09.
32. Taizoh SADOH, R. Aoki, T. Tanaka, Masanobu Miyao, Low-Temperature (≤300°C) Nano-Seeding Growth of Position-Controlled Large-Grain Germanium on Insulator for Flexible Electronics, XIII International Conference on Nanostructured Materials, 2016.08.
33. Masanobu Miyao, M. Kurosawa, Taizoh SADOH, Orientation Controlled Artificial Nano-CRystals for Hybrid-Formation of (111), (110), and (100) Germanium-on-Insulator Structures, International Conference on Nanostructured Materials, 2016.08.
34. Taizoh SADOH, R. Aoki, T. Tanaka, Masanobu Miyao, Low-Temperature Formation of Position-Controlled Large-Grain Ge on Insulator by Gold-Induced Crystallization Combined with Localized Nucleation, Asia-Pacific Conference on Semiconducting Silicides and Related Materials 2016, 2016.07.
35. Kenta Moto, Ryo Matsumura, Taizoh SADOH, Hiroshi Ikenoue, Masanobu Miyao, Formation and Analysis of GeSn on Insulator with Non-Thermal Equilibrium Sn Concentration Obtained by Pulsed Laser-Annealing, Asia-Pacific Conference on Semiconducting Silicides and Related Materials 2016, 2016.07.
36. T. Sakai, Ryo Matsumura, Taizoh SADOH, Masanobu Miyao, Low-temperature formation of Sn-doped Ge on insulator by Au-induced lateral crystallization for flexible electronics, 35th Electronic Materials Symposium, 2016.06.
37. M. Sasaki, Masanobu Miyao, Taizoh SADOH, Large-Grain Sn-Doped Ge (100) on Insulator by Aluminum-Induced Crystallization at Low-Temperature for Flexible Electronics , Active-Matrix Flatpanel Displays and Devices 2016, 2016.07.
38. Kenta Moto, Ryo Matsumura, Taizoh SADOH, Hiroshi Ikenoue, Masanobu Miyao, Pulsed Laser Annealing for Supersaturated Substitutional Sn Atoms in GeSn Thin-Films on Insulator, International Union of Materials Research Societies - International Conference on Electronic Materials, 2016.07.
39. Ryo Matsumura, Taizoh SADOH, Masanobu Miyao, Liquid Phase Growth of Composition-Controlled Large-Grain SixGe1-x (0
40. T. Sakai, Ryo Matsumura, Taizoh SADOH, Masanobu Miyao, Low Temperature (<250oC) Au-Induced Lateral Crystallization of Sn-Doped Ge on Insulator , 8th International SiGe Technology and Device Meeting, 2016.06.
41. Y. Kai, Ryo Matsumura, Taizoh SADOH, Masanobu Miyao, Formation of High-Mobility Ge(Sn) on Insulator by Low-Temperature (~400°C) Solid-Phase Crystallization, 8th International SiGe Technology and Device Meeting, 2016.06.
42. R. Aoki, T. Tanaka, J.-H. Park, Masanobu Miyao, Taizoh SADOH, Position-Controlled Ge Crystals on Insulator at Low Temperature (≤300°C) by Spatially-Modulated Gold-Induced Crystallization, 8th International SiGe Technology and Device Meeting, 2016.06.
43. Kenta Moto, Ryo Matsumura, Taizoh SADOH, Hiroshi Ikenoue, Masanobu Miyao, Non-Thermal Equilibrium Growth of Amorphous Ge1-xSnx (0
44. Takatsugu Sakai, Ryo Matsumura, Taizoh SADOH, Masanobu Miyao, Low Temperature (~150oC) Au-Induced Lateral Growth of a-GeSn on Insulator, 9th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2016.01.
45. Kenta Moto, Ryo Matsumura, Taizoh SADOH, Hiroshi Ikenoue, Masanobu Miyao, Formation of GeSn Crystals with High Sn Concentration on Insulating Substrate by Pulsed Laser-Annealing, 9th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2016.01.
46. Rikuta Aoki, J.-H. Park, Taizoh SADOH, Masanobu Miyao, Effects of Diffusion-Barrier-Patterning on Formation of Position-Controlled Ge-on- Insulator by Gold-Induced Crystallization at Low Temperatures (≤300°C), 2015 International Electron Devices and Materials Symposium, 2015.11.
47. Kenta Moto, Ryo Matsumura, Taizoh SADOH, Hiroshi Ikenoue, Masanobu Miyao, Laser-Annealing-Induced Crystallization of Ge1-xSnx (0≦x≦0.2) on Insulating Substrate, 2015 International Electron Devices and Materials Symposium, 2015.11.
48. Kenta Moto, Ryo Matsumura, Taizoh SADOH, Hiroshi Ikenoue, Masanobu Miyao, Laser-Annealing-Induced Crystallization of Ge1-xSnx (0≦x≦0.2) on Insulating Substrate, 2015 International Electron Devices and Materials Symposium, 2015.11.
49. Ryo Matsumura, Kenta Moto, Yuki Kai, Taizoh SADOH, Hiroshi Ikenoue, Masanobu Miyao, Analysis and control of Si segregation phenomena to achieve uniform-SiGe crystals on insulator by rapid-melting growth, 2015 International Electron Devices and Materials Symposium, 2015.11.
50. Ryo Matsumura, Kenta Moto, Yuki Kai, Taizoh SADOH, Hiroshi Ikenoue, Masanobu Miyao, Ultra-low temperature (~180°C) solid-phase crystallization of GeSn on insulator triggered by laser-anneal seeding, 228th ECS Meeting, 2015.10.
51. Kenta Moto, Ryo Matsumura, Hironori Chikita, Taizoh SADOH, Hiroshi Ikenoue, Masanobu Miyao, Non-thermal equilibrium formation of Ge1-xSnx (0≦x≦0.2) crystals on insulator by pulsed laser annealing, 228th ECS Meeting, 2015.10.
52. Taizoh SADOH, J.-H. Park, Rikuta Aoki, Masanobu Miyao, Gold-induced low-temperature (≤300°C) growth of quasi-single crystal SiGe on insulator for advanced flexible electronics, 228th ECS Meeting, 2015.10.
53. Ryo Matsumura, Taizoh SADOH, Masanobu Miyao, Low-Temperature (~150°C) Solid-Phase Epitaxy of a-GeSn/c-Ge for High Non-Equilibrium Substitutional Sn-Concentration GeSn, SSDM 2015, 2015.09.
54. Ryo Matsumura, Taizoh SADOH, Masanobu Miyao, Thermally-Stable High Sn Concentration (~9%) GeSn on Insulator by Ultra-Low Temperature (~180°C) Solid-Phase Crystallization Triggered by Laser-Anneal Seeding, SSDM 2015, 2015.09.
55. Ryo Matsumura, Taizoh SADOH, Masanobu Miyao, Segregation-Controlled Rapid-Melting Growth for Sige-on-Insulator with Uniform Lateral Composition, IMRC 2015, 2015.08.
56. Taizoh SADOH, Masanobu Miyao, Laser-Anneal Seeded Solid-Phase Crystallization for Ultra-Low Temperature Growth of Germanium-Tin, IMRC 2015, 2015.08.
57. Taizoh SADOH, Masanobu Miyao, Crystallization of GeSn on insulating substrates by lateral solid-phase crystallization technique, EMS 2015, 2015.07.
58. Taizoh SADOH, Masanobu Miyao, Quasi-Single Crystal SiGe on Insulator by Au-Induced Crystallization for Flexible Electronics, AM-FPD-15, 2015.07.
59. Taizoh SADOH, Masanobu Miyao, Large Single-Crystal Ge-on-Insulator by Thermally-Assisted Si-Seeded-Pulse-Laser Annealing (≤400°C), ICSI 9, 2015.05.
60. Taizoh SADOH, Masanobu Miyao, Low-Temperature (≤300°C) Formation of Orientation-Controlled Large-Grain (≥10 μm) Ge-Rich SiGe on Insulator by Gold-Induced Crystallization, ICSI 9, 2015.05.
61. Taizoh SADOH, Masanobu Miyao, High Sn-Concentration (~8%) GeSn by Low-Temperature (~150°C) Solid-Phase Epitaxy of a-GeSn/c-Ge, ICSI 9, 2015.05.
62. Taizoh SADOH, Masanobu Miyao, Melting Sn Induced Low-Temperature Seeding for Position Controlled Giant GeSn Crystal Arrays, ICSI 9, 2015.05.
63. Taizoh SADOH, Masanobu Miyao, Low Temperature (<200oC) position controlled Solid Phase Crystallization of GeSn combined with Laser Anneal Seeding, ICSI 9, 2015.05.
64. Taizoh SADOH, Masanobu Miyao, Thickness dependent solid phase crystallization of amorphous GeSn on insulating substrates, ICSI 9, 2015.05.
65. Taizoh SADOH, Masanobu Miyao, Orientation-controlled large-grain SiGe on insulator by gold-induced crystallization at low-temperature for flexible opto-electronics, INC11, 2015.05.
66. Taizoh SADOH, Masanobu Miyao, Sn-precipitation-suppressed solid-phase epitaxy of GeSn on Ge at low-temperatures (~150°C), INC11, 2015.05.
67. Taizoh SADOH, Masanobu Miyao, Low temperature solid phase crystallization of GeSn on insulator for flexible electronics, INC11, 2015.05.
68. Taizoh SADOH, Masanobu Miyao, Composition-controlled SiGe crystalson insulator by rapid-melting growth -Analysisand control of SiGe segregation-, 8th Int. Workshop on New Group  IV Semiconductor Nanoelectronics, 2015.01.
69. Taizoh SADOH, Masanobu Miyao, Ultra-Low-Temperature Crystallization of a-GeSn on Insulator for Flexible Electronics, 8th Int. Workshop on New Group  IV Semiconductor Nanoelectronics, 2015.01.
70. Taizoh SADOH, Masanobu Miyao, Large-Grain Ge-on-Insulator Structure by Rapid-Melting Growth of a-GeSn, IEDMS 2014, 2014.11.
71. Taizoh SADOH, Masanobu Miyao, Low Temperature Crystallization of a-GeSn on Insulating Films for Next Generation Flexible Electronics - (2) Positioning Control of Nucleation – , IEDMS 2014, 2014.11.
72. Taizoh SADOH, Masanobu Miyao, Low-Temperature Crystallization of a-GeSn on Insulating Films for Next-Generation Flexible Electronics(1) Characteristics of Solid Phase Crystallization, IEDMS 2014, 2014.11.
73. Taizoh SADOH, Masanobu Miyao, Low-Temperature Gold-Induced Crystallization of Orientation Controlled Sige on Plastic for Flexible Electronics, ICTF-16, 2014.10.
74. Taizoh SADOH, Masanobu Miyao, Self-Organized Technologies of Group-IV Based Hetero-Semiconductors on Insulator for Multi-Functional Devices, ICTF-16, 2014.10.
75. Taizoh SADOH, Masanobu Miyao, Orientation-Controlled Large-Grain SiGe on Flexible Substrate by Nucleation-Controlled Gold-Induced Crystallization, SSDM 2014, 2014.09.
76. Taizoh SADOH, Masanobu Miyao, Formation of Large-Grain Ge-Based Group-IV Crystals on Insulator by Seedless Rapid-Melting Growth in Solid-Liquid-Coexisting Temperature Region, SSDM 2014, 2014.09.
77. Taizoh SADOH, Masanobu Miyao, Melting-Sn Induced Seeding-Processing for Low-Temperature Lateral-Crystallization of a-GeSn on Insulating Substrate, SSDM 2014, 2014.09.
78. Taizoh SADOH, Masanobu Miyao, Formation of Large Grain Ge on Insulator Structure by Liquid-Solid Coexisting Annealing of a-GeSn, IUMRS-ICA, 2014.08.
79. Taizoh SADOH, Masanobu Miyao, Self-Organized Crystallization of Group IV Mixed-Crystal Semiconductors on Insulating Substrate for Advanced Thin-Film-Transistors, ICCE-22, 2014.07.
80. Taizoh SADOH, Masanobu Miyao, Low-Temperature Formation of Atomically-Controlled GeSn Thin-Films on SiGe Virtual -Substrate by Liquid-Solid Coexisting Annealing, ICCE-22, 2014.07.
81. Taizoh SADOH, Masanobu Miyao, Composite-Structures of Single-Crystalline Ge(SiSn) and Amorphous Insulator on Si Platform for Multi-Functional Transistors by Self-Organized Processing, ICCE-22, 2014.07.
82. Taizoh SADOH, Masanobu Miyao, Formation of Quasi-Single-Crystal Ge on Plastic by Nucleation-Controlled Au-Induced Layer-Exchange Growth for Flexible Electronics, AM-FPD 14, 2014.07.
83. Taizoh SADOH, Masanobu Miyao, Self-organized-seeding process for melt-back lateral-growth of group-IV mixed-crystal on insulator, 7th International Silicon-Germanium Technology and Device Meeting, 2014.06.
84. Taizoh SADOH, Masanobu Miyao, Sn-enhanced low-temperature crystallization of a-GeSn/c-Si Stacked Structure for high-quality SiGe on Si platform, 7th International Silicon-Germanium Technology and Device Meeting, 2014.06.
85. Taizoh SADOH, Masanobu Miyao, Effect of Sn-doped Ge Insertion Layers on Epitaxial Growth of Ferromagnetic Fe3Si Films on a Flexible Substrate, 7th International Silicon-Germanium Technology and Device Meeting, 2014.06.
86. Taizoh SADOH, Masanobu Miyao, Formation of Large Grain Ge single crystal on Insulating substrate by Liquid-Solid Coexisting Annealing of a-Ge(Sn), 225th ECS Meeting, 2014.05.
87. Taizoh SADOH, Masanobu Miyao, Dynamic control of lateral crystallization for Group IV mixed-crystal semiconductor on insulating substrate, 7th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2014.01.
88. Taizoh SADOH, Masanobu Miyao, Influences of Sn on low-temperature crystallization of a-GeSn mixed or a-Ge/Sn stacked layer on crystal substrate, 7th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2014.01.
89. Taizoh SADOH, Narrowing-Induced Orientation-Stabilization in Rapid-Melting Growth of Ge-on- Insulator, IUMRS-ICA 2013, 2013.12.
90. Taizoh SADOH, Masanobu Miyao, Low Temperature (~300oC) Epitaxial Growth of SiGe by Liquid-Solid Coexisting Annealing of a-GeSn/Si(100) Structure, ISQNM 2013, 2013.12.
91. Taizoh SADOH, Masanobu Miyao, Formation of giant SiGe crystals on insulator by self-organized-seeding rapid-melting growth, ISQNM 2013, 2013.12.
92. Taizoh SADOH, Masanobu Miyao, Formation of Orientation-Controlled Thin (~50 nm) Ge(111)-on-Insulator by Rapid- Melting Growth Combined with Narrow-Striping, MNC 2013, 2013.11.
93. Taizoh SADOH, Masanobu Miyao, Liquid-Solid Coexisting Annealing of a-GeSn/Si(100) Structure for Low Temperature Epitaxial Growth of SiGe, 224th ECS Meeting, 2013.10.
94. Taizoh SADOH, Masanobu Miyao, High-Quality Hybrid-GeSn/Ge Stacked-Structures by Low-Temperature -Induced-Melting Growth, 224th ECS Meeting, 2013.10.
95. Taizoh SADOH, Masanobu Miyao, Low-Temperature (~300oC) Epitaxial-Growth of SiGe(Sn) on Si-Platform by Liquid-Solid Coexisting Annealing, SSDM 2013, 2013.09.
96. Taizoh SADOH, Masanobu Miyao, Segregation-Free Giant Single-Crystalline SiGe-on-Insulator by Super-Cooling-Controlled Rapid-Melting Growth, SSDM 2013, 2013.09.
97. Taizoh SADOH, Masanobu Miyao, Hybrid-Formation of Single-Crystalline Ge(Si,Sn)-on-Insulator Structures by Self-Organized Melting-Growth, SSDM 2013, 2013.09.
98. Taizoh SADOH, Masanobu Miyao, Selective-Growth of (100)- and (111)- Ge Thin-Films on Insulator by Interfacial–Energy -Controlled Metal-Induced-Crystallization, The 17th International Conference on Crystal Growth and Epitaxy, 2013.08.
99. Taizoh SADOH, Masanobu Miyao, Cooling-Rate-Controlled Rapid-Melting-Growth for Giant-Single-Crystal SiGe on Insulator, The 17th International Conference on Crystal Growth and Epitaxy, 2013.08.
100. Taizoh SADOH, Masanobu Miyao, Laterally Graded SiGe-Profiles on Insulator by Segregation-Controlled Rapid-Melting Technique, The 55th Electronic Materials Conference, 2013.06.
101. Taizoh SADOH, Masanobu Miyao, Ultra-Low-Temperature Formation of (100)- or (111)-Oriented Ge on Insulator for Flexible Electronics, The 55th Electronic Materials Conference, 2013.06.
102. Taizoh SADOH, Masanobu Miyao, High-Quality Ge-Networks on Insulator by Liquid-Phase Lateral-Epitaxy, The 55th Electronic Materials Conference, 2013.06.
103. Taizoh SADOH, Masanobu Miyao, Orientation-Stabilization of Ge(111) on Insulator by Nano-Patterning in Rapid-Melting Growth, 13th International Workshop on Junction Technology 2013, 2013.06.
104. Taizoh SADOH, Masanobu Miyao, Orientation-Stabilization of Ge(111) on Insulator by Nano-Patterning in Rapid-Melting Growth, ICSI-8, 2013.06.
105. Taizoh SADOH, Masanobu Miyao, In-Depth Analysis of High-Quality Ge-on-Insulator Structure Formed by Rapid-Melting Growth, ICSI-8, 2013.06.
106. Taizoh SADOH, Masanobu Miyao, Low-Temperature Formation (~150oC) of Ge on Insulator through Layer-Exchange of Ge/Sn Stacked-Structures, ICSI-8, 2013.06.
107. Taizoh SADOH, Masanobu Miyao, Ge-Diffusion-Controlled Gold-Induced Crystallization of (100)- or (111)-Oriented Ge for Flexible Electronics, ICSI-8, 2013.06.
108. Taizoh SADOH, Masanobu Miyao, Low-Temperature Formation of SiGe Crystals by Partial-Melting Method in a-GeSn /Si(100) Structure, ICSI-8, 2013.06.
109. Taizoh SADOH, Masanobu Miyao, Melting-Induced-Mixing in a-Ge/Sn/c-Ge Structures for Sn-Doped Ge Films, ICSI-8, 2013.06.
110. Taizoh SADOH, Masanobu Miyao, Laterally-Graded P-Doping in GOI Structure by Ion-Implantation and Rapid- Melting- Growth, ICSI-8, 2013.06.
111. Taizoh SADOH, Masanobu Miyao, Dynamics Analysis of Rapid-Melting Growth Using SiGe on Insulator, ICSI-8, 2013.06.
112. Taizoh SADOH, Masanobu Miyao, Single-Crystalline SiGe Stripes on Insulating Substrate by Segregation-Free Rapid -Melting-Growth, ICSI-8, 2013.06.
113. Taizoh SADOH, Masanobu Miyao, Coherent Lateral-Growth of Ge over Insulating Film by Rapid-Melting-Crystallization, ICSI-8, 2013.06.
114. Taizoh SADOH, Masanobu Miyao, 3-Dimensionally-Graded SiGe-on-Insulator Stacked Structures by Successive Rapid -Melting Growth, ICSI-8, 2013.06.
115. Taizoh SADOH, Masanobu Miyao, Orientation-Stabilized Lateral-Growth of Ge-on-Insulator Nano-Wires by Rapid-Melting-Process, MNC 2012, 2012.10.
116. Taizoh SADOH, Masanobu Miyao, Formation of Large Grain SiGe on Insulator by Si Segregation in Seedless-Rapid-Melting Process, PRiME 2012, ECS Pacific RIM Meeting 2012, 2012.10.
117. Taizoh SADOH, Masanobu Miyao, Formation of Graded SiGe on Insulator by Segregation-Controlled Rapid-Melting-Growth, PRiME 2012, ECS Pacific RIM Meeting 2012, 2012.10.
118. Taizoh SADOH, Masanobu Miyao, Formation of large-grain Ge(111) films on insulator by gold-induced layer-exchange crystallization at low temperature, PRiME 2012, ECS Pacific RIM Meeting 2012, 2012.10.
119. Taizoh SADOH, Masanobu Miyao, Hybrid-Formation of Ge-on-Insulator Structures on Si Platform by SiGe-Mixing-Triggered Rapid-Melting Growth --- A Road to Artificial Crystal ---, PRiME 2012, ECS Pacific RIM Meeting 2012, 2012.10.
120. Taizoh SADOH, Masanobu Miyao, Low-temperature Crystallization of a-Si, a-Ge and a-Si1-xGex Films by Soft X-ray Irradiation, SSDM 2012, 2012.09.
121. Taizoh SADOH, Masanobu Miyao, Laterally Graded SiGe-on-Insulator with Universal Si Profile by Cooling-Rate-Controlled Rapid-Melting-Growth, SSDM 2012, 2012.09.
122. Taizoh SADOH, Masanobu Miyao, Formation of Germanium Epitaxial Layer on Insulator Using Nanostructured Rapid-Melting-Grown Template, IUMRS-ICEM 2012, 2012.09.
123. Taizoh SADOH, Masanobu Miyao, Formation of N-Type Ge-on-Insulator through P-Implantation and Rapid-Melting Growth, IUMRS-ICEM 2012, 2012.09.
124. Taizoh SADOH, Masanobu Miyao, Si Segregation Behavior in Giant SiGe Stripes on Insulator during Rapid-Melting-Growth, IUMRS-ICEM 2012, 2012.09.
125. Taizoh SADOH, Masanobu Miyao, Stripe-Length Dependent Laterally Graded SiGe Profiles by Rapid-Melting-Growth, E-MRS 2012 Fall Meeting, 2012.09.
126. Taizoh SADOH, Masanobu Miyao, Defect Free Multi-Structures of [SiGe/Insulator]2 on Si (100) platform, E-MRS 2012 Fall Meeting, 2012.09.
127. Taizoh SADOH, Masanobu Miyao, Formation of Nanostructured Germanium-on-Insulator for Integration of Multi-Functional Materials on a Panel, AM-FPD 2012, 2012.07.
128. Taizoh SADOH, Masanobu Miyao, (111)-Oriented Large-Grain Ge on Insulator by Gold-Induced Crystallization Combined with Interfacial Layer Insertion, AM-FPD 2012, 2012.07.
129. Taizoh SADOH, Masanobu Miyao, Formation of (111)-oriented large-grain Ge on insulator at low-temperature by gold-induced crystallization technique, AWAD 2012, 2012.06.
130. Taizoh SADOH, Masanobu Miyao, Multi-Layered SiGe-on-Insulator Structures by Rapid-Melting-Growth, AWAD 2012, 2012.06.
131. Taizoh SADOH, Masanobu Miyao, Orientation-controlled SiGe on insulator for system on panel, 8th International Thin-film Transistor Conference, 2012.01.
132. Taizoh SADOH, Masanobu Miyao, Formation of High-Quality Ge-on-Insulator (GOI) Networks for Next-Generation Large-Scale-Integration (LSI), International Thin Films Conference 2011, 2011.11.
133. Taizoh SADOH, Masanobu Miyao, Catalytic-growth of Si-based thin-films for advanced semiconductor devices, International Thin Films Conference 2011, 2011.11.
134. Taizoh SADOH, Masanobu Miyao, Agglomeration Free GOI Stripe Arrays with Nano-Spacing for Epitaxial Template, 15th International Conference on Thin Films 2011, 2011.11.
135. Taizoh SADOH, Masanobu Miyao, Orientation-Controlled Large-Grain Ge on Insulator by Au-Induced Layer-Exchange crystallization with Al2O3 Interfacial Layers, 15th International Conference on Thin Films 2011, 2011.11.
136. Taizoh SADOH, Masanobu Miyao, Kohei Hamaya, Advanced Hetero-epitaxial Growth based on SiGe for Multi-functional Devices, 15th International Conference on Thin Films 2011, 2011.11.
137. Taizoh SADOH, Masanobu Miyao, Hybrid-Formation of (100), (110), and (111) Ge-on-Insulator Structures on (100) Si Platform, SSDM 2011, 2011.09.
138. Taizoh SADOH, Masanobu Miyao, Low Temperature (~250 oC) Layer Exchange Crystallization of Si1-xGex (x=1-0) on Insulator for Advanced Flexible Devices, ICSI7, 2011.08.
139. Taizoh SADOH, Masanobu Miyao, Orientation Control of (100), (110), (111) Mesh-Patterned GOI Grown by SiGe Mixing-Triggered Rapid Melting Technique, ICSI7, 2011.08.
140. Taizoh SADOH, Effects of Dose on Activation Characteristics of P in Ge, ICSI7, 2011.08.
141. Taizoh SADOH, Masanobu Miyao, Single-crystalline (110)-oriented Ge strips on insulating substrates by SiGe-mixing triggered rapid-melting-growth from artificial Si-micro-seeds, ICSI7, 2011.08.
142. Taizoh SADOH, Masanobu Miyao, Enhancement of SiN-Induced Compressive and Tensile Strains in Si-Pillars by Modulation of SiN Network Structures, ICSI7, 2011.08.
143. Taizoh SADOH, Masanobu Miyao, Kohei Hamaya, Novel Growth-techniques of SiGe-based Hetero-structures for Post-scaling Devices, ICSI7, 2011.08.
144. Taizoh SADOH, Masanobu Miyao, Recent Progress of SiGe-based Hetero-structure Technologies for Post-scaling Devices, 2011 International Workshop on Advanced Electrical Engineering and Related Topics, 2011.07.
145. Taizoh SADOH, Masanobu Miyao, Low-temperature (~250oC) Crystallization of Poly-SiGe Films by Gold-Induced Layer-Exchange Technique for Flexible Electronics, AWAD2011, 2011.06.
146. Taizoh SADOH, Masanobu Miyao, Low-Temperature Formation of (111)Si1-xGex (0
147. Taizoh SADOH, Masanobu Miyao, Au-catalyst Induced Low Temperature (~250 ℃) Layer Exchange Crystallization for SiGe on Insulator, 219th ECS Meeting, 2011.05.
148. Taizoh SADOH, Masanobu Miyao, Growth-Direction Dependent Rapid-Melting-Growth of Ge-on-Insulator (GOI) and its Application to Ge Mesh-Growth, 219th ECS Meeting, 2011.05.
149. Taizoh SADOH, Masanobu Miyao, Lateral-liquid phase epitaxy of (101) Ge-on-insulator from Si template by metal-induced crystallization, 219th ECS Meeting, 2011.05.
150. Taizoh SADOH, Masanobu Miyao, Si1-xGex (0 x 1) oriented-growth on transparent-insulating-substrates by Al-induced layer-exchange crystallization, ITC 2011, 2011.03.
151. Taizoh SADOH, Masanobu Miyao, High-Mobility Ge on Insulator (GOI) Nano-Stripes for Next Generation LSI, ESciNano2010, 2010.12.
152. Taizoh SADOH, Masanobu Miyao, Low-temperature (≤250oC) crystallization of Si on insulating substrate by gold-induced layer-exchange technique, TENCON2010, 2010.11.
153. Taizoh SADOH, Masanobu Miyao, High-mobility Defect-free Ge Single-crystals by Rapid Melting Growth on Insulating Substrates, ICSICT 2010, 2010.11.
154. Taizoh SADOH, Masanobu Miyao, High-Mobility Ge on Insulator (GOI) by SiGe Mixing-Triggered Rapid-Melting-Growth, 4th International SiGe Symposium The ECS 218th, 2010.10.
155. Taizoh SADOH, Masanobu Miyao, Uniaxial and Biaxial Strain Distribution Mapping in SOI Micro-Structures by Polarized Raman Spectroscopy, SSDM2010, 2010.09.
156. Taizoh SADOH, Masanobu Miyao, Single-Crystalline (100) Ge Stripes with High Mobilities Formed on Insulating Substrates by Rapid-Melting-Growth with Artificial Single-Crystal Si Seeds, SSDM2010, 2010.09.
157. Taizoh SADOH, Masanobu Miyao, Orientation control of Ge on insulator by growth-direction-selected SiGe-mixing-triggered melting growth, ISTESNE 2010, 2010.06.
158. Taizoh SADOH, Masanobu Miyao, Growth-Direction-Dependent Characteristics of Ge-on-Insulator by SiGe Mixing Triggered Melting Growth, 5th ISTDM2010, 2010.05.
159. Taizoh SADOH, Masanobu Miyao, Strained Single-Crystal GOI (Ge on Insulator) Arrays by Rapid-Melting Growth from Si (111) Micro-Seeds, 5th ISTDM2010, 2010.05.
160. Taizoh SADOH, Masanobu Miyao, SiGe Mixing-Triggered Melting-Growth for Orientation-Controlled Ge on Transparent Insulating Substrates, 5th ISTDM2010, 2010.05.
161. Taizoh SADOH, Masanobu Miyao, Al-Induced Oriented-Crystallization of Si Films on Quartz and Its Application to Epitaxial-Template for Ge Growth, 5th ISTDM2010, 2010.05.
162. Taizoh SADOH, Masanobu Miyao, Interfacial Oxide Layer Controlled Al-Induced Crystallization of Si on Insulator for Epitaxial Template, 5th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2010.01.
163. Taizoh SADOH, Masanobu Miyao, SiGe Mixing-Triggered Liquid-Phase Epitaxy for Defect-Free GOI (Ge on Insulator), 5th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2010.01.
164. Taizoh SADOH, Masanobu Miyao, Orientation-controlled poly-SiGe on insulator by Aluminum-induced crystallization, ITC’10, 2010.01.
165. Taizoh SADOH, Yuki Kai, Hironori Chikita, Ryo Matsumura, M. Miyao, Segregation-Controlled Rapid-Melting Growth for Large-Grain and Uniform -Composition SiGe on Insulator, JSPS International Core-to-Core Program Workshop on Atomically Controlled Processing for Ultra-large Scale Integration, 2014.11.
166. Taizoh SADOH, J.-H. PARK, Masashi Kurosawa, M. Miyao, Ultralow-Temperature Catalyst-Induced-Crystallization of SiGe on Plastic for Flexible Electronics, 7th International Silicon-Germanium Technology and Device Meeting, 2014.06.
167. Taizoh SADOH, J.-H. PARK, Masashi Kurosawa, M. Miyao, Low-Temperature Metal-Induced Crystallization of Orientation-Controlled SiGe on Insulator for Flexible Electronics, The Electrochemical Society, 224th ECS Meeting, 2013.10.
168. Taizoh SADOH, J.-H. PARK, M. Miyao, Orientation-Controlled Large-Grain SiGe Crystal on Flexible Substrate by Low -Temperature Metal-Induced Crystallization, 7th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2014.01.
169. Taizoh SADOH, M. Miyao, Recent Progress of Rapid-Melting-Growth for Laterally-Graded, Ge-Based Mixed-Crystals on Insurato, 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, 2013.02.