Kyushu University Academic Staff Educational and Research Activities Database
List of Papers
Taizoh SADOH Last modified date:2019.07.31

Associate Professor / Electronic Devices / Department of Electronics / Faculty of Information Science and Electrical Engineering


Papers
1. C. Xu, X. Gong, M. Miyao, and T. Sadoh, Enhanced mobility of Sn-doped Ge thin-films (≤50 nm) on insulator for fully depleted transistors by nucleation-controlled solid-phase crystallization, Applied Physics Letters, 10.1063/1.5096798, 115, 4, 042101-1-042101-5, 2019.07, 低温固相成長法に界面変調法を重畳した新しい結晶成長技術を創出し、絶縁膜上における極薄GeSn結晶薄膜の高移動度化を実現。次世代集積回路や高性能フレキシブル・エレクトロニクスの実現を加速する重要な成果である。.
2. C. J. Koswaththage, T. Higashizako, T. Okada, T. Sadoh, M. Furuta, B. S. Bae, and T. Noguchi, High mobility sputtered InSb film by blue laser diode annealing, AIP Advances, https://doi.org/10.1063/1.5087235, 9, 045009-1-045009-5, 2019.04.
3. T. Sadoh, M. Kurosawa, A. Heya, N. Matsuo, and M. Miyao, Large single-crystal Ge-on-insulator by thermally-assisted (~400°C) Si-seeded-pulse-laser annealing, Materials Science in Semiconductor Processing, 70, 8-11, 2017.11.
4. Kenta Moto, Takayuki Sugino, Ryo Matsumura, Hiroshi Ikenoue, Masanobu Miyao, and Taizoh Sadoh, Low-temperature (<200⸰C) solid-phase crystallization of high substitutional Sn concentration (~10%) GeSn on insulator enhanced by weak laser irradiation, AIP Advances, 7, 7, 075204-1-075204-6, 2017.07.
5. Masanobu Miyao, Taizoh SADOH, Novel growth techniques of group-IV based semiconductors on insulator for next-generation electronics, Japanese Journal of Applied Physics, 56, 5, 05DA06-1-05DA06-14, 2017.04, 絶縁膜上におけるIV族系半導体の結晶成長に関する研究を総括。次世代エレクトロニクスの実現を加速する重要な成果である。.
6. Taizoh SADOH, Y. Kai, Ryo Matsumura, Kenta Moto, Masanobu Miyao, High carrier mobility of Sn-doped polycrystalline-Ge films on insulators by thickness-dependent low-temperature solid-phase crystallization, Applied Physics Letters, 10.1063/1.4971825, 109, 23, 232106-1-232106-5, 2016.12, 膜厚変調型固相成長法を創出し、高移動度を有するGeSn結晶の絶縁膜上における低温成長を実現。次世代フレキシブル・エレクトロニクスの実現を加速する重要な成果である。.
7. K. Moto, R. Matsumura, Taizoh SADOH, Hiroshi Ikenoue, Masanobu Miyao, Cooling Rate Dependent High Substitutional Sn Concentration (>10%) in GeSn Crystals on Insulator by Pulsed Laser-Annealing, ECS Transactions, 75, 10, 109-113, 2016.10.
8. T. Sakai, R. Matsumura, Taizoh SADOH, Masanobu Miyao, Low-Temperature Formation of Sn-Doped Ge on Insulating Substrates by Metal-Induced Crystallization, ECS Transactions, 75, 10, 105-108, 2016.10.
9. Taizoh SADOH, R. Aoki, T. Tanaka, J.-H. Park, Masanobu Miyao, Low-Temperature Growth of Orientation-Controlled Large-Grain Ge-Rich SiGe on Insulator at Controlled-Position for Flexible Electronics, ECS Transactions, 75, 10, 95-103, 2016.10.
10. Taizoh SADOH, A. Ooato, J.-H. Park, Masanobu Miyao, High Sn-concentration (similar to 8%) GeSn by low-temperature (similar to 150 degrees C) solid-phase epitaxy of a-GeSn/c-Ge, THIN SOLID FILMS, 10.1016/j.tsf.2015.09.069, 602, 20-23, 2016.03.
11. Taizoh SADOH, J.-H. Park, R. Aoki, Masanobu Miyao, Low-temperature (<300 °C) formation of orientation-controlled large-grain (>10 μm) Ge-rich SiGe on insulator by gold-induced crystallization, THIN SOLID FILMS, dx.doi.org/10.1016/j.tsf.2015.10.057, 602, 3-6, 2016.03.
12. Kenta Moto, Ryo Matsumura, Taizoh SADOH, Hiroshi Ikenoue, Masanobu Miyao, Pulse number controlled laser annealing for GeSn on insulator structure with high substitutional Sn concentration, Applied Physics Letters, dx.doi.org/10.1063/1.4955059, 108, 26, 262105-1-262105-5, 2016.07, パルスレーザアニール法におけるパルス数を制御し、絶縁膜上におけるGeSn結晶の低温成長を実現。次世代フレキシブル・エレクトロニクスの実現を加速する重要な成果である。.
13. Rikuta Aoki, J.-H. Park, Masanobu Miyao, Taizoh SADOH, Low-Temperature Formation of Large-Grain (≥10 μm) Ge at Controlled-Position on Insulator by Gold-Induced Crystallization Combined with Diffusion-Barrier Patterning, ECS Journal of Solid State Science and Technology, 5, 3, P179-P182, 2016.01.
14. Taizoh SADOH, J.-H. Park, Rikura Aoki, Masanobu Miyao, Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics, Japanese Journal of Applied Physics, 55, 03, 03CB01-1-03CB01-4, 2016.01, 触媒誘起成長法を用いて、絶縁膜上における方位制御された大面積SiGe結晶の低温成長を実現。次世代フレキシブル・エレクトロニクスの実現を加速する重要な成果である。.
15. Matsumura, Ryo, Chikita, Hironori, Kai Yuki, Taizoh SADOH, Hiroshi Ikenoue, Masanobu Miyao, Low-temperature (~180 ℃) position-controlled lateral solid-phase crystallization of GeSn with laser-anneal seeding, Applied Physics Letters, 107, 26, 262106-1-262106-5, 2015.12, レーザアニール法によるSn溶融シード形成技術とGeSn固相成長技術を融合し、絶縁膜上における大面積GeSn結晶の低温成長を実現。次世代フレキシブル・エレクトロニクスの実現を加速する重要な成果である。.
16. Kai Yuki, Chikita, Hironori, Matsumura, Ryo, Taizoh SADOH, Masanobu Miyao, Seeding Effects of Sn/a-Ge Island Structures for Low-Temperature Lateral-Growth of a-GeSn on Insulator, ECS Journal of Solid State Science and Technology, 5, 2, P76-P79, 2015.12.
17. Matsumura, Ryo, Masaya Sasaki, Chikita, Hironori, Taizoh SADOH, Masanobu Miyao, Thickness Dependent Solid-Phase Crystallization of Amorphous GeSn on Insulating Substrates at Low Temperatures (≤250◦C), ECS Solid State Letters, 4, 12, P95-P97, 2015.09.
18. Taizoh SADOH, Chikita, Hironori, Matsumura, Ryo, Masanobu Miyao, Ultra-low temperature (<= 300 degrees C) growth of Ge-rich SiGe by solid-liquid-coexisting annealing of a-GeSn/c-Si structures, JOURNAL OF APPLIED PHYSICS, 10.1063/1.4929878, 118, 9, 067112-1-067112-7, 2015.09, GeSn相図における固液共存温度領域で、GeSn/Si積層構造を熱処理することでSiGe混晶の低温形成を実現。Ⅳ族混晶系の新しい低温成長プロセスの可能性を見いだした。次世代エレクトロニクスの実現を加速する重要な成果である。.
19. Taizoh SADOH, Masanobu Miyao, High quality, giant crystalline-Ge stripes on insulating substrate by rapid-thermal-annealing of Sn-doped amorphous-Ge in solid-liquid coexisting region, AIP Advances, 5, 6, 067112-1-067112-7, 2015.06.
20. Taizoh SADOH, Masanobu Miyao, Self-Organized Travelling-Zone-Melting Growth of a-Ge/Sn/c-Ge Stacked-Structures for High-Quality GeSn, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 10.1149/2.0011411jss, 3, 10, 340-343, 2014.07.
21. Taizoh SADOH, Masanobu Miyao, In-depth analysis of high-quality Ge-on-insulator structure formed by rapid-melting growth, THIN SOLID FILMS, 10.1016/j.tsf.2013.08.035, 557, 139-142, 2014.04.
22. Taizoh SADOH, Masanobu Miyao, Coherent lateral-growth of Ge over insulating film by rapid-melting-crystallization, THIN SOLID FILMS, 10.1016/j.tsf.2013.08.127, 557, 135-138, 2014.04.
23. Taizoh SADOH, Masanobu Miyao, Dynamic analysis of rapid-melting growth using SiGe on insulator, THIN SOLID FILMS, 10.1016/j.tsf.2013.08.129, 557, 125-128, 2014.04.
24. Taizoh SADOH, Masanobu Miyao, Sn-induced low-temperature (similar to 150 degrees C) crystallization of Ge on insulator, THIN SOLID FILMS, 10.1016/j.tsf.2013.08.123, 557, 155-158, 2014.04.
25. Taizoh SADOH, Masanobu Miyao, Formation of Large Grain Ge Single Crystal on Insulating Substrate By Liquid-Solid Coexisting Annealing of a-Ge(Sn), ECS Transactions, 61, 3, 97-100, 2014.03.
26. Taizoh SADOH, Masanobu Miyao, Low Temperature (~ 300oC) Epitaxial Growth of SiGe by Liquid-Solid Coexisting Annealing of A-GeSn/Si (100) Structure, ECS Transactions, 58, 9, 257-262, 2014.03.
27. Taizoh SADOH, Masanobu Miyao, Giant-Lateral-Growth of SiGe Stripes on Insulating-Substrate by Self-Organized-Seeding and Rapid-Melting-Growth in Solid-Liquid Coexisting Region, ECS SOLID STATE LETTERS, 10.1149/2.003405ssl, 3, 5, P61-P64, 2014.03.
28. Taizoh SADOH, The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100), Materials, 7, 1409-1421, 2014.02.
29. Taizoh SADOH, Crystallization of Electrodeposited Germanium Thin Film on Silicon (100), Materials, 6, 5047-5057, 2013.11.
30. Taizoh SADOH, Orientation-Control of Ge-Stripes-on-Insulator by Narrowing in Rapid-Melting Growth from Si(111) Seed, ECS SOLID STATE LETTERS, 10.1149/2.008309ssl, 2, 9, P76-P78, 2013.06.
31. Taizoh SADOH, Masanobu Miyao, Laterally-Graded Doping into Ge-on-Insulator by Combination of Ion-Implantation and Rapid-Melting Growth, ECS SOLID STATE LETTERS, 10.1149/2.002307ssl, 2, 7, P58-P60, 2013.04.
32. Masanobu Miyao, Taizoh SADOH, Hybrid-Formation of Ge-on-Insulator Structures on Si Platform by SiGe-Mixing-Triggered Rapid-Melting Growth - A Road to Artificial Crystal -, HIGH PURITY SILICON 12, 10.1149/05005.0059ecst, 50, 5, 59-70, 2012.10.
33. Taizoh SADOH, Masanobu Miyao, Formation of Large Grain SiGe on Insulator by Si Segregation in Seedless-Rapid-Melting Process, SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES, 10.1149/05009.0431ecst, 50, 9, 431-436, 2012.10.
34. Taizoh SADOH, Masanobu Miyao, Formation of Graded SiGe on Insulator by Segregation-Controlled Rapid-Melting-Growth, SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES, 10.1149/05009.0747ecst, 50, 9, 547-751, 2012.10.
35. Taizoh SADOH, Masanobu Miyao, Atomically-Coherent-Coalescence of Two Growth-Fronts in Ge Stripes on Insulator by Rapid-Melting Lateral-Crystallization, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 10.1149/2.005303jss, 2, 3, 54-57, 2013.12.
36. Taizoh SADOH, Masanobu Miyao, Enhanced Interfacial-Nucleation in Al-Induced Crystallization for (111) Oriented Si1-xGex (0 <= x <= 1) Films on Insulating Substrates, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 10.1149/2.010203jss, 1, 3, 144-147, 2012.08.
37. Taizoh SADOH, Masanobu Miyao, Epitaxial-Template Structure Utilizing Ge-on-Insulator Stripe Arrays with Nanospacing for Advanced Heterogeneous Integration on Si Platform, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.1143/JJAP.51.06FF04, 51, 6, 06FF04-1-06FF04-5, 2012.06.
38. Taizoh SADOH, Masanobu Miyao, Low temperature (~250 °C) layer exchange crystallization of Si1−xGex (x=1–0) on insulator for advanced flexible devices, 520, 3293-3295, 2012.02.
39. Taizoh SADOH, Masanobu Miyao, Enhancement of SiN-induced compressive and tensile strains in Si free-standing microstructures by modulation of SiN network structures, THIN SOLID FILMS, 10.1016/j.tsf.2011.10.088, 520, 8, 3276-3278, 2012.02.
40. Taizoh SADOH, Effects of dose on activation characteristics of P in Ge, THIN SOLID FILMS, 10.1016/j.tsf.2011.10.076, 520, 8, 3255-3258, 2012.02.
41. Taizoh SADOH, Masanobu Miyao, Growth-Direction Dependent Rapid-Melting-Growth of Ge-on-Insulator (GOI) and its Application to Ge Mesh-Growth, ADVANCED SEMICONDUCTOR-ON-INSULATOR TECHNOLOGY AND RELATED PHYSICS 15, 10.1149/1.3570777, 35, 5, 55-60, 2011.05.
42. Taizoh SADOH, Masanobu Miyao, Lateral-liquid phase epitaxy of (101) Ge-on-insulator from Si template by metal-induced crystallization, ADVANCED SEMICONDUCTOR-ON-INSULATOR TECHNOLOGY AND RELATED PHYSICS 15, 10.1149/1.3570776, 35, 5, 51-54, 2011.05.
43. Taizoh SADOH, Masanobu Miyao, Au-Catalyst Induced Low Temperature (similar to 250 degrees C) Layer Exchange Crystallization for SiGe on Insulator, ADVANCED SEMICONDUCTOR-ON-INSULATOR TECHNOLOGY AND RELATED PHYSICS 15, 10.1149/1.3570774, 35, 5, 39-42, 2011.05.
44. Taizoh SADOH, Masanobu Miyao, Al-Induced oriented-crystallization of Si films on quartz and its application to epitaxial template for Ge growth, SOLID-STATE ELECTRONICS, 10.1016/j.sse.2011.01.033, 60, 1, 7-12, 2011.06.
45. Taizoh SADOH, Masanobu Miyao, Growth-direction-dependent characteristics of Ge-on-insulator by Si-Ge mixing triggered melting growth, SOLID-STATE ELECTRONICS, 10.1016/j.sse.2011.01.039, 60, 1, 18-21, 2011.06.
46. Taizoh SADOH, Masanobu Miyao, Growth-direction-dependent characteristics of Ge-on-insulator by Si-Ge mixing triggered melting growth, SOLID-STATE ELECTRONICS, 10.1016/j.sse.2011.01.039, 60, 1, 18-21, 2011.06.
47. Taizoh SADOH, Masanobu Miyao, Strained single-crystal GOI (Ge on Insulator) arrays by rapid-melting growth from Si (111) micro-seeds, SOLID-STATE ELECTRONICS, 10.1016/j.sse.2011.01.037, 60, 1, 22-25, 2011.06.
48. Taizoh SADOH, Masanobu Miyao, Au-Induced Low-Temperature (similar to 250 degrees C) Crystallization of Si on Insulator Through Layer-Exchange Process, ELECTROCHEMICAL AND SOLID STATE LETTERS, 10.1149/1.3562275, 14, 6, H232-H234, 2011.03.
49. Taizoh SADOH, Masanobu Miyao, Dehydrogenation-Enhanced Large Strain (similar to 1.6%) in Si Pillars Covered by Si3N4 Stress Liners, ELECTROCHEMICAL AND SOLID STATE LETTERS, 10.1149/1.3551465, 14, 4, H174-H176, 2011.02.
50. Taizoh SADOH, Masanobu Miyao, High-Mobility Ge on Insulator (GOI) by SiGe Mixing-Triggered Rapid-Melting-Growth, ECS Transactions, 33, 6, 409-418.
51. Taizoh SADOH, Masanobu Miyao, Growth-Direction Dependent Rapid-Melting-Growth of Ge-on-Insulator (GOI) and its Application to Ge Mesh-Growth, ADVANCED SEMICONDUCTOR-ON-INSULATOR TECHNOLOGY AND RELATED PHYSICS 15, 10.1149/1.3570777, 35, 5, 55-60, 2011.05.
52. Taizoh SADOH, Role of vacancy annihilation in electrical activation of P implanted in Ge, 電子情報通信学会, 信学技報, 2011-4, 13-16.
53. Taizoh SADOH, Masanobu Miyao, Low-temperature (<= 250 degrees C) crystallization of Si on insulating substrate by gold-induced layer-exchange technique, TENCON 2010: 2010 IEEE REGION 10 CONFERENCE, 2196-2198, 2010.11.
54. Taizoh SADOH, Masanobu Miyao, Relaxation Mechanism of SiGe-on-Insulator by Oxidation-Induced Ge Condensation with H(+) Irradiation and Postannealing, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 10.1149/1.3486089, 157, 11, H991-H996, 2010.09.
55. Taizoh SADOH, Epitaxial growth of a full-Heusler alloy CO2FeSi on silicon by low-temperature molecular beam epitaxy, THIN SOLID FILMS, 10.1016/j.tsf.2009.10.107, 518, S278-S280, 2010.01.
56. Taizoh SADOH, Masanobu Miyao, Liquid-phase epitaxial growth of Ge island on insulator using Ni-imprint-induced Si crystal as seed, THIN SOLID FILMS, 10.1016/j.tsf.2009.10.084, 518, S181-S185, 2010.01.
57. Taizoh SADOH, Al-induced low-temperature crystallization of Si-1 (-) Ge-x(x) (0 < x < 1) by controlling layer exchange process, THIN SOLID FILMS, 10.1016/j.tsf.2009.10.082, 518, S174-S178, 2010.01.
58. Taizoh SADOH, Giant growth of single crystalline Ge on insulator by seeding lateral liquid-phase epitaxy, THIN SOLID FILMS, 10.1016/j.tsf.2009.10.081, 518, S170-S173, 2010.01.
59. Kaoru TOKO, Takanori Tanaka, Taizoh SADOH, Masanobu Miyao, Formation of single-crystalline Ge stripes on quartz substrates by SiGe mixing-triggered liquid-phase epitaxy, THIN SOLID FILMS, 10.1016/j.tsf.2009.10.083, 518, S179-S181, 2010.01.
60. Masanobu Miyao, Kohei Hamaya, Taizoh SADOH, Hiroyoshi Itoh, Yoshihito Maeda, Molecular beam epitaxial growth of ferromagnetic Heusler alloys for group-IV semiconductor spintronic devices, THIN SOLID FILMS, 10.1016/j.tsf.2009.10.106, 518, S273-S277, 2010.01.
61. Masahi Kurosawa, Taizoh SADOH, Masanobu Miyao, Comprehensive study of Al-induced layer-exchange growth for orientation-controlled Si crystals on SiO2 substrates, Journal of Applied Physics, doi.org/10.1063/1.4901262, 116, 17, 173510-1-8, 2014.11, アルミニウム誘起成長法を用い、ガラス基板上における結晶方位の制御されたSi多結晶薄膜の低温形成を実現。次世代薄膜デバイスの実現を加速する重要な成果である。.
62. Hironori Chikita, Ryo Matsumura, Yuki Kai, Taizoh SADOH, Masanobu Miyao, Ultra-high-speed lateral solid phase crystallization of GeSn on insulator combined with Sn-melting-induced seeding, Applied Physics Letters, doi.org/10.1063/1.4902344, 105, 20, 202112-1-5, 2014.11, Sn溶融シード形成技術とGeSn固相成長技術を融合し、絶縁膜上における大面積GeSn結晶の低温成長を実現。次世代フレキシブル・エレクトロニクスの実現を加速する重要な成果である。.
63. Ryo Matsumura, Ryusuke Kato, Taizoh SADOH, Masanobu Miyao, Large-grain SiGe-on-insulator with uniform Si concentration by segregation-free rapid-melting growth, Applied Physics Letters, doi: 10.1063/1.4895512, 105, 10, 102106 -1-5, 2014.09, 種結晶を用いない溶融成長法を高度化し、絶縁膜上に均一組成を有する大粒径SiGe結晶を実現。Si-LSIと混載可能な高性能SiGeデバイスの基盤技術の創出であり、次世代エレクトロニクスの実現を加速する重要な成果である。.
64. Jong-Hyeok Park, Kenji Kasahara, Kohei Hamaya, Masanobu Miyao, Taizoh SADOH, High carrier mobility in orientation-controlled large-grain (≥50 um) Ge directly formed on flexible plastic by nucleation-controlled gold-induced-crystallization, Applied Physics Letters, http://dx.doi.org/10.1063/1.4885716, 104, 25, 252110 -1-4, 2014.06, フレキシブルなプラスチックシート上に、方位制御された大粒径Ge結晶を実現。電気特性を評価し、高いキャリヤ移動度を実証。プラスチック上に多機能を有する異種デバイスを混載する基盤技術の創出であり、次世代エレクトロニクスの実現を加速する重要な成果である。.
65. Jong-Hyeok Park, Masanobu Miyao, Taizoh SADOH, (111)-oriented large-grain (≧50 μm) Ge crystals directly formed on flexible plastic substrate by gold-induced layer-exchange crystallization, Japanese Journal of Applied Physics, 53, 2, 020302-1-3, 2014.01, 不定型なプラスチック基板上における方位制御された大粒径Ge結晶の低温成長を実現。フレキシブルなプラスチック上に多機能を有する異種デバイスを混載する基盤技術の創出であり、次世代エレクトロニクスの実現を加速する重要な成果である。.
66. Jong-Hyeok Park, Tsuneharu Suzuki, Masashi Kurosawa, Masanobu Miyao, Taizoh SADOH, Nucleation-controlled gold-induced-crystallization for selective formation of Ge(100) and (111) on insulator at low-temperature (~250°C), Applied Physics Letters, http://dx.doi.org/10.1063/1.4819015 , 103, 8, 082102-1-4, 2013.08, 不定型な絶縁基板上における方位制御された大粒径Ge結晶の低温成長を実現。プラスチック上に多機能を有する異種デバイスを混載する基盤技術の創出であり、次世代エレクトロニクスの実現を加速する重要な成果である。.
67. Yuki Tojo, Ryo Matsumura, Hiroyuki YOKOYAMA, Masashi Kurosawa, Kaoru TOKO, Taizoh SADOH, M. Miyao, High-quality formation of multiply stacked SiGe-on-insulator structures by temperature -modulated successive rapid-melting-growth, Applied Physics Letters, 102, 9, 092102-1-4, 2013.03, 絶縁膜上における横方向組成傾斜型SiGe薄膜の積層構造の高品位形成を実現。Siプラットフォーム上に多機能を有する異種デバイスを混載する基盤技術の創出であり、次世代LSIの実現を加速する重要な成果である。.
68. Ryo Matsumura, Yuki Tojo, Masashi Kurosawa, Taizoh SADOH, I. Mizushima, M. Miyao, Growth-rate-dependent laterally graded SiGe profiles on insulator by cooling-rate controlled rapid-melting-growth, Applied Physics Letters, 101, 24, 241904-1-5, 2012.10, 液相成長法による絶縁膜上における横方向組成傾斜型SiGe薄膜の高品位形成を実現。Siプラットフォーム上に多機能を有する異種デバイスを混載する基盤技術の創出であり、次世代LSIの実現を加速する重要な成果である。.
69. H. Yokoyama, K. Toko, T. Sadoh, and M. Miyao, Nano-lithography free formation of high density Ge-on-insulator network for epitaxial template, Applied Physics Letters, 100, 9, 092111-1-4, 2012.03, 絶縁膜上におけるGe薄膜の自己組織化現象を利用し、リソグラフィー技術を用いることなく、絶縁膜上に微細メッシュ構造を有するGe単結晶薄膜を形成するとともに、これをテンプレートとして大面積かつ平坦な単結晶Ge薄膜をエピタキシャル成長するプロセスを創成した。絶縁膜上に多機能を有する異種デバイスを混載する基盤技術の創出であり、次世代LSIの実現を加速する重要な成果である。.
70. M. Kurosawa, N. Kawabata, T. Sadoh, and M. Miyao, Hybrid-orientation Ge-on-insulator structures on (100) Si platform by Si micro-seed formation combined with rapid-melting growth, Applied Physics Letters, 100, 17, 172107-1-5, 2012.04, 金属誘起成長における界面エネルギー最小化効果を利用し、(110),(111)面方位を有するSi単結晶粒を非晶質の絶縁膜上に形成するとともに、これらと基板(Si(100))をシードとしたGe溶融成長を誘起するプロセス手法を構築した。その結果、多面方位((100),(110),(111))を有する単結晶Ge薄膜を同一基板上に混載する事に成功した。人工単結晶技術の創成であり、次世代LSIの実現を加速する重要な成果である。.
71. M. Kurosawa, Y. Tojo, R. Matsumura, T. Sadoh, and M. Miyao, Single-crystalline laterally graded GeSn on insulator structures by segregation controlled rapid-melting growth, Applied Physics Letters, 101, 9, 091905-1-4, 2012.08, 溶融成長時の偏析現象を利用し、絶縁膜上に組成傾斜を有するGeSn単結晶薄膜を実現した。成長と共に生じるSn偏析の挙動を明らかにすると共に、組成傾斜を制御する指針を明確化した。絶縁膜上における次世代半導体GeSn単結晶薄膜の高品位形成を実現する手法の確立であり、次世代LSIの実現を加速する重要な成果である。.
72. K. Toko, T. Tanaka, Y. Ohta, T. Sadoh, and M. Miyao, Defect-free Ge-on-insulator with (100) , (110), and (111) orientations by growth-directions -selected rapid-melting growth, Applied Physics Letters, 97, 15, 152101-1-3, 2010.10, 絶縁膜上に溶融法で形成したGe単結晶薄膜の結晶性に与えるSiシードの結晶方位の効果を系統的に解明した。成長と共にGe薄膜の結晶方位が回転する現象を明らかにすると共に、成長方向を適正化することにより回転を抑制する指針を明確化した。絶縁膜上におけるGe単結晶薄膜の高品位形成を実現する手法の確立であり、次世代LSIや次世代システムインディスプレイの実現を加速する重要な成果である。.
73. K. Toko, Y. Ohta, T. Tanaka, T. Sadoh, and M. Miyao, Chip-size formation of high-mobility Ge strips on SiN films by cooling rate controlled rapid-melting growth, Applied Physics Letters, 99, 03, 032103, 2011.07, 絶縁膜上におけるGe薄膜の溶融成長を総合的に検討し、チップサイズ(1cm)に匹敵する巨大な単結晶Ge薄膜を実現した。さらに、高いキャリヤ移動度を有することを実証した。Geをチャネルとした超高速トランジスタの基盤技術の創出であり、次世代LSIの実現を加速する重要な成果である。.
74. I. Mizushima, K.Toko, Y. Ohta, T. Sakane, T. Sadoh, and M. Miyao, Mesh-shape-and-size controlled rapid-melting growth for the formation of single-crystalline (100), (110) and (111) Ge networks on insulators, Applied Physics Letters, 98, 18, 182107, 2011.05, 絶縁膜上にメッシュ形状を有するGe単結晶薄膜を形成するプロセス技術を開発した。熱力学的な考察を元に試料構造とプロセス条件を適正化し、Si(100),(110),(111)基板からの溶融成長を誘起することにより、大面積にわたるメッシュ状Ge(100),(110),(111)単結晶薄膜の高品位成長を実現した。デバイスレイアウトの自由度が飛躍的に向上できる。超高速Geトランジスタを用いた次世代LSIの創出にを加速する成果である。.
75. K. Hamaya, Y. Ando, T. Sadoh, and M. Miyao, Source–Drain Engineering Using Atomically Controlled Heterojunctions for Next-Generation SiGe Transistor Applications, Japanese Journal of Applied Physics, 50, 01, 010101, 2011.01.
76. T. Sadoh, M. Kurosawa, T. Hagihara, K. Toko, and M. Miyao, Low-Temperature (~ 250℃) Cu-Induced Lateral Crystallization of Amorphous Ge on Insulator, Electrochemical and Solid-State Letters, 14, 7, H274, 2011.04.
77. K. Toko, Y. Ohta, T. Sakane, T. Sadoh, I. Mizushima, and M. Miyao, Single-crystalline (100) Ge networks on insulators by rapid-melting growth along hexagonal mesh-pattern , Applied Physics Letters, 98, 4, 042101, 2011.01, 絶縁膜上にメッシュ状Ge単結晶薄膜を形成するプロセス技術を開発した。熱力学的な考察を元に試料構造とプロセス条件を適正化し、大面積にわたるメッシュ状Ge単結晶薄膜の高品位成長を実現した。デバイスレイアウトの自由度が飛躍的に向上でき、高速Geトランジスタを用いた次世代LSIの創出につながる成果である。.
78. M. Kurosawa, T. Sadoh, and M. Miyao, Selective-mapping of uniaxial and biaxial strains in Si-on-insulator microstructures by polarized microprobe Raman spectroscopy, Applied Physics Letters, 98, 1, 012110, 2011.01, 偏光ラマン分光法を用い、Si結晶薄膜に導入されている歪みが1軸性か2軸性かを判別する手法を開発した。さらに2次元マッピングにより、薄膜中に存在する1軸歪みおよび2軸歪みの分布を可視化することに成功した。次世代トランジスタ構築に有用な新評価手法の創成である。.
79. K. Toko, M. Kurosawa, H. Yokoyama, N. Kawabata, T. Sakane, Y. Ohta, T. Tanaka, T. Sadoh, and M. Miyao, (100) Orientation-Controlled Ge Giant-Stripes on Insulating Substrates by Rapid-Melting Growth Combined with Si Micro-Seed Technique , Applied Physics Express, 3, 075603, 2010.06, 非晶質Geの溶融成長法に金属誘起成長法によるSi結晶形成技術を重畳し、無定型な絶縁性基板上に結晶方位の制御されたGe単結晶薄膜を実現した。人工単結晶技術の創成であり、次世代システムインディスプレイの実現を可能とする重要な成果である。.
80. M. Itakura, S. Masumori, N. Kuwano, H. Kanno, T. Sadoh,.and M. Miyao, Microscopic studies of metal-induced lateral crystallization in SiGe, Applied Physics Letters, Vol.96, pp.182101-1-3, 2010.05, 金属誘起横方向成長法により絶縁膜上に形成したSiGe多結晶薄膜の微細構造を電子顕微鏡法により解明した。成長を駆動する金属化合物がGe濃度に依存して変化する事、その結果、結晶成長の様態もGe濃度に応じて変化する事を明らかにした。システムインディスプレイや高効率薄膜太陽電池の作製プロセスを確立する上で有用な知見である。.
81. K. Toko, T. Tanaka, T. Sadoh, and M. Miyao, High-Hole-Mobility Single-Crystalline Ge Thin Films Formed on Insulating Substrates by SiGe Mixing-Triggered Directional Melting Growth, Japanese Journal of Applied Physics, 49, 4, 04DA08, 2010.04.
82. K. Yamane, K. Hamaya, Y. Ando, Y. Enomoto, K. Yamamoto, T. Sadoh, and M. Miyao, Effect of atomically controlled interfaces on Fermi-level pinning at metal/Ge interfaces, Applied Physics Letters, Vol.96, pp.162104-1-3, 2010.04, 金属/Geショットキー障壁のフェルミ準位ピニングに与える界面原子配列の効果を検討した。界面構造を原子層レベルで制御すると、フェルミ準位ピニングが弱化することを明らかにした。Geをチャネルを用いた次世代トランジスタの実現を加速する有用な成果である。.
83. T. Tanaka, K. Toko, T. Sadoh, M. Miyao, High Quality Single-Crystalline Ge-Rich SiGe on Insulator Structures by Si-doping Controlled Rapid Melting Growth, Applied Physics Express, 3, 3, 031301, 2010.03, 絶縁膜上における非晶質SiGeの溶融成長を検討し、高Ge濃度を有する高品質SiGe単結晶薄膜を実現した。顕微ラマン分光法を用いてSiGe膜中のSi濃度分布を評価し、固化時のGe偏析が生じていることを明らかにした。更に、純Ge膜の溶融成長で問題となるGe凝集が、Si添加により抑制できることを明らかにした。次世代LSIプロセスとして有用な成果である。.
84. T. Tanaka, T. Sadoh, M. Kurosawa, M. Tanaka, M. Yamaguchi, S. Suzuki, T. Kitamura, and M. Miyao, Stress-enhancement in free-standing Si pillars through nonequilibrium dehydrogenation in SiN:H stress-liners by ultraviolet light irradiation, Applied Physics Letters, Vol.95, pp.262103-1-3, 2009.12.
85. T. Sadoh, H. Ohta, and M. Miyao, Effects of Si Layer Thickness on Solid-Phase Crystallization of Stacked Ge/Si/SiO2 Structures, Japanese Journal of Applied Physics, Vol.48, No.3, B004-1-3, 2009.03.
86. M.Kurosawa, Y. Tsumira, T. Sadoh, and M. Miyao , Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si1-xGex (x: 0-1) on Insulating Substrate , Japanese Journal of Applied Physics, Vol.48, No.3, B002-1-3, 2009.03.
87. K. Toko, T. Sadoh, and M. Miyao , Position-Controlled Growth of SiGe Crystal Grains on Insulator by Indentation-Induced Solid-Phase Crystallization , Japanese Journal of Applied Physics, Vol.48, No.3, B007-1-3, 2009.03.
88. Y. Ando, K. Hamaya, K. Kasahara, K. Ueda, Y. Nozaki, T. Sadoh, Y. Maeda, K. Matsuyama, and M. Miyao , Magnetic properties of epitaxially grown Fe3Si/Ge(111) layers with atomically at heterointerfaces , Journal Applied Physics, Vol.105, No.7, B102-1-3, 2009.02.
89. M. Kurosawa, Y. Tsumura, T. Sadoh and M. Miyao , Ge Fraction Dependence of Al-Induced Crystallization of SiGeat Low Temperatures , Journal of the Korean Physical Society, Vol. 54, No. 1, pp. 451-454, 2009.01.
90. K. Ueda, T. Sadoh, Y. Ando, T. Jonishi, K. Narumi, Y. Maeda, M. Miyao , Temperature dependent epitaxial growth of ferromagnetic silicide Fe3Si on Ge substrate , Thin Solid Films , Vol.517, No.1, pp422–424, 2008.11.
91. M. Tanaka, A. Kenjo, T. Sadoh, M. Miyao , Stress-relaxation mechanism in ultra-thin SiGe on insulator formed by H+ irradiation-assisted Ge condensation method, Thin Solid Films , Vol.517, No.1, pp248–250 , 2008.11.
92. Dong Wang, H. Nakashima, M. Tanaka, T. Sadoh, M. Miyao, J. Morioka, T. Kitamura , Local strain evaluation of single crystal Si pillar by micro Raman spectroscopy and photoluminescence , Thin Solid Films , Vol.517, No.1, pp31-33 , 2008.11.
93. K. Ueda, M. Kumano, T. Sadoh, M. Miyao , Low temperature epitaxial growth of Fe3Si on Si(111) substrate through ultra-thin SiO2 films , Thin Solid Films , Vol.517, No.1, pp425-427 , 2008.11.
94. M. Miyao , K. Ueda, Y. Ando, M. Kumano, T. Sadoh, K. Narumi, Y. Maeda , Atomically controlled hetero-epitaxy of Fe3Si/SiGe for spintronics application , Thin Solid Films , Vol.517, No.1, pp181-183 , 2008.11.
95. T. Sadoh , M. Kurosawa, M. Kimura, K. Ueda , M. Koyanagi, M. Miyao, Low-temperature oriented growth in [CoPt/MgO]n multi-layer , Thin Solid Films , Vol.517, No.1, pp430-433 , 2008.11.
96. M. Tanaka, T. Ohka, T. Sadoh, M. Miyao, Comprehensive study of low temperature (<1000 °C) oxidation process in SiGe/SOI structures , Thin Solid Films , Vol.517, No.1, pp251-253 , 2008.11.
97. Y. Kishi, M. Kumano, K. Ueda, T. Sadoh, and M. Miyao, Characterization of Fe3Si/Si Schottky Contact for Future Spin-Transistor , ECS Transactions, Vol.16 No.10, pp277-280 , 2008.10.
98. K. Ueda, Y. Ando, K. Yamamoto, M. Kumano, K. Hamaya, T. Sadoh, K. Narumi,Y. Maeda, and M. Miyao, Low Temperature Epitaxial Growth of Full Heusler Alloy Fe2MnSi on Ge(111) Substrates for Spintronics Application , ECS Transactions, Vol.16 No.10, pp273-276 , 2008.10.
99. T. Sadoh, K. Toko, K. Ikeda, S. Hata, M. Itakura, H. Nakashima, M. Nishida, and M.Miyao , Formation of SiGe Quasi-Single Crystal Grain on Insulator by Indentation-Induced Solid-Phase Crystallization, ECS Transactions, Vol.16 No.10, pp219-222 , 2008.10.
100. K.Hamaya, K.Ueda, Y. Kishi, Y.Ando, T.Sadoh, and M.Miyao , Epitaxial Ferromagnetic Fe3Si/Si(111) Structures with High-Quality Heterointerfaces, Appl. Phys. Lett., Vol.93, No.13, 132117, pp1-3, 2008.09.
101. K.Ueda, K. Hamaya, K.Yamamoto, Y. Ando, T.Sadoh, Y.Maeda, and M.Miyao , Low-Temperature Molecular Beam Epitaxy of a Ferromagnetic Full-Heusler Alloy Fe2MnSi on Ge(111) , Appl. Phys. Lett., Vol.93, No.11, 112108, pp1-3, 2008.09.
102. K. Ueda, Y. Ando, M. Kumano, T. Sadoh,Y. Maeda and M. Miyao , Low Temperature Formation of Multi-Layered Structures of Ferromagnetic Silicide Fe3Si and Ge , Applied Surface Science , Vol.254, No.19, pp6215-6217, 2008.07.
103. M. Tanaka, T. Sadoh, J. Morioka, T. Kitamura and M. Miyao, Influences of Si Pillar Geometry on SiN-Stressor Induced Local Strain, Applied Surface Science, Vol.254, No.19, pp6226-6228, 2008.07.
104. K. Ueda, Y. Ando, M. Kumano, T. Sadoh,Y. Maeda and M. Miyao, Low Temperature Formation of Multi-Layered Structures of Ferromagnetic Silicide Fe3Si and Ge, Applied Surface Science , Vol.254, No.19, pp6215-6217, 2008.07.
105. Y. Ando, K. Ueda, M. Kumano, T. Sadoh, K. Narumi, Y. Maeda, and M. Miyao, Low Temperature Hetero-Epitaxy of Ferromagnetic Silicide on Ge Substrates for Spin-Transistor Application, IEICE Transaction on Electronics, Vol.E91-C, No.5, pp708-711, 2008.05.
106. M.Tanaka, T. Ohka, T. Sadoh, and M. Miyao, Abnormal oxidation characteristics of SiGe/SOI structures depending on piled-up Ge fraction at SiO2/SiGe interface, J. Appl. Phys., Vol.103, pp.054909-1-5, 2008.03.
107. Yoshihito Maeda, Takafumi Jonishi, Kazumasa Narumi, Yu-ichiro Ando, Koji Ueda, Mamoru Kumano, Taizoh Sadoh, and Masanobu Miyao, Axial orientation of molecular-beam-epitaxy-grown Fe3Si/Ge hybrid structures and its degradation, Appl. Phys. Lett. , Vol.91, No.17, pp.171910 -1-2, 2007.10.
108. K. Ueda, Y. Ando, M. Kumano, T. Sadoh, Y. Maeda and M.Miyao, Formation of Fe3Si/Ge/Fe3Si Multi-Layer by Double Heteroepitaxy on High Quality Fe3Si/Ge Substrate for Spintronics Application, ECS Transactions, Vol.11, No.6, pp487-492, 2007.10.
109. M. Kumano, Y. Ando, K. Ueda, T. Sadoh, K. Narumi, Y. Maeda, M. Miyao, Effect of Fe/Si Ratio on Epitaxial Growth of Fe3Si on Ge Substrate, ECS Transactions, Vol.11, No.6, pp481-486 , 2007.10.
110. Y. Tsumura, I. Nakao, H. Kanno, A. Kenjo, T. Sadoh, and M. Miyao, Comparative Study of Al-Induced Crystallization for Poly-Si and Ge on Insulating Film, ECS Transactions, Vol.11, No.6, pp395-402, 2007.10.
111. K. Ueda, R. Kizuka, H. Takeuchi, A. Kenjo, T. Sadoh,.and M. Miyao, Influence of Substrate Orientation on Low-Temperature Epitaxial Growth of Ferromagnetic Silicide Fe3Si on Si, Thin Solid Films, Vol.515, No.22, pp.8250-8253, 2008.07.
112. K. Toko, H. Kanno, A. Kenjo, T. Sadoh, T. Asano, and M. Miyao, Ni-Imprint Induced Solid-Phase Crystallization in Si1-xGex(x:0-1) on Insulator, Appliedd Physics Letters, Vol.91, No.4, pp2111-1-2, 2007.07.
113. Y. Ando, K. Ueda, M. Kumano, T. Sadoh, K. Narumi, Y. Maeda, and M. Miyao, Low Temperature Hetero-Epitaxy of Ferromagnetic Silicide on Ge Substrates for Spin-Transistor Application, 電子情報通信学会 信学技報, ED2007-101, 6月号 pp.221-224, 2007.06.
114. H. Kanno, K. Toko, T. Sadoh, and M. Miyao , Temperature dependent metal-induced lateral crystallization of amorphous SiGe on insulating substrate, Appl. Phys. Lett., Vol.89, No.18, 182120, pp1-3, 2006.10.
115. H. Kanno, A. Kenjo, T. Sadoh, and M. Miyao , Directional Growth of Si Nanowires on Insulating Films by Electric-Field-Assisted Metal-Induced Lateral Crystallization :, Mat. Res. Soc. Symp. Proc , Vol.891, EE06-08 pp.1-6, 2006.08.
116. H. Kanno, A. Kenjo, T. Sadoh and M. Miyao , Electric-Field-Assisted Metal-Induced Lateral Crystallization of Amorphous SiGe on SiO2
, Jpn. J. Appl. Phys. , Vol.45, No.5B, pp.4351-4354 , 2006.05.
117. K. Ueda, T. Sadoh, A. Kenjo, F. Shoji, H. Kurino, M. Koyanagi, and M. Miyao , Morphological change of Co-nanodot on SiO2 by thermal treatment , Thin Solid Films, Vol.508, No.1-2, pp.178-181, 2006.06.
118. M.Tanaka, I. Tsunoda, T. Sadoh, T. Enokida, M. Ninomiya, M. Nakamae and M. Miyao , Thickness Dependent Stress-Relaxation in Thin SGOI Structures and Its Improvement , Thin Solid Films, Vol.508, No.1-2, pp.247-250 , 2006.06.
119. : M. Itakura, S. Masumori, T. Ohta, Y. Tomokiyo, N. Kuwano, H. Kanno, T. Sadoh and M. Miyao , Characterization of metal-induced lateral crystallization of amorphous SiGe on insulating film , Thin Solid Films, Vol.508, No.1-2, pp.57-60 , 2006.06.
120. T. Aoki, H. Kanno, A. Kenjo, T. Sadoh, and M. Miyao, Au-induced Lateral Crystallization of a-Si1-xGex(x: 0-1) at low-temperature , Thin Solid Films, Vol.508, No.1-2, pp.44-47, 2006.06.
121. H. Kanno, A. Kenjo, T. Sadoh and M. Miyao , Electric field-dependent Ni-mediated lateral crystallization of a-Si on SiO2 : ( (Jun.,.2006)) , Thin Solid Films, Vol.508, No.1-2, pp.40-43 , 2006.06.
122. M. Miyao, H. Kanno, and T. Sadoh, Recent Progress of SiGe Heterostructure Technologies for Novel Devices : , ECS Transactions , Vol.2, No.1, pp.165-179 , 2006.12.
123. M. Tanaka, I. Tsunoda, T. Sadoh, T. Enokida, M. Ninomiya, M. Nakamae and M. Miyao, Improved Oxidation-Induced Ge Condensation Technique by Using H+ Irradiation and Post-Annealing for Highly Stress-Relaxed Ultrathin SGOI :, Jpn. J. Appl. Phys., Vol.45, No.4B, pp.3598-3600, 2006.04.
124. T. Sadoh, H. Takeuchi, K. Ueda, A. Kenjo, and M. Miyao, Epitaxial Growth of Ferromagnetic Silicide Fe3Si on Si (111) Substrate , Jpn. J. Appl. Phys., Vol.45, No.4B, pp.3598-3600, 2006.04.
125. M. Miyao, M. Tanaka, I. Tsunoda, T. Sadoh, T. Enokida, H. Hagino, M. Ninomiya and M. Nakamae, Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge-condensation process combined with H+ irradiation and post-annealing, Appl. Phys. Lett. , Vol.88, No.14, 142105 , 2006.04.
126. I. Tsunoda, T. Nagata, T. Sadoh, A. Kenjo, and M. Miyao, Influence of Ion Beam Irradiation on Solid-Phase Regrowth of Amorphous Si on SiO2, Solid State Phenomena, 78-79, 345-348, Vol.78-79, pp.345-348, 2001.05.
127. T. Sadoh, Fitrianto, M. Kunigami, A. Kenjo, A. Miyauchi, H. Inoue, and M. Miyao, Thermal stability of B in poly-SiGe on SiON, Materials Science and Engineering, 10.1016/S0921-5107(01)00816-9, 89, 1-3, 129-132, 2002.01.
128. I. Tsunoda, T. Nagata, A. Kenjo, T. Sadoh, and M. Miyao, Low-temperature solid-phase crystallization of a-Si1-xGex on SiO2 by ion-beam stimulation, Materials Science and Engineering, 10.1016/S0921-5107(01)00770-X, 89, 1-3, 336-340, B89, pp.336-340, 2002.01.
129. T. Sadoh, Fitrianto, A. Kenjo, A. Miyauchi, H. Inoue, and M. Miyao, Mechanism of Improved Thermal Stability of B in poly-SiGe Gate on SiON, Jpn. J. Appl. Phys, 10.1143/JJAP.41.2468, 41, 4B, 2468-2471, Part 1, Vol. 41, No.4B, pp.2468-2471, 2002.04.
130. Y. Murakami, H. Kido, A. Kenjo, T. Sadoh, T. Yoshitake, and M. Miyao, Ion-Beam Irradiation Effect on Solid-Phase Growth of β-FeSi2, Physica E, 10.1016/S1386-9477(02)00641-0, 16, 3-4, 505-508, Vol.16/3-4, pp.505-508, 2003.03.
131. M. Miyao, I. Tsunoda, T. Sadoh, and A. Kenjo, Ion-beam Stimulated Solid-phase Crystallization of Amorphous Si on SiO2, Thin Solid Films, 10.1016/S0040-6090(00)01634-5, 383, 1-2, 104-106, 383, pp104-106, 2001.01.
132. Y. Murakami, H. Yamauchi, T. Sadoh, A. Kenjo, and M. Miyao, Dose Rate Dependence of Ion-Induced-Damage in Si Evaluated by Spectroscopic Ellipsometry, Solid State Phenomena, 78-79, 341-343, Vol.78-79, pp.341-344, 2001.05.
133. T. Sadoh, K. Toko, H. Kanno, S. Masumori, M. Itakura, N. Kuwano, and M. Miyao, Nucleation Controlled Metal-Induced Lateral Crystallization of Amorphous Si1-xGex with Whole Ge Fraction on Insulator, Jap.J.Appl.Phys., Vol.47, No.3, pp1876-1879, 2008.03.
134. T. Sadoh, H. Kamizuru, A. Kenjo and M. Miyao, High-Performance Poly-Ge Thin-Film Transistor with NiGe Schottky Source/Drain, Materials Science Forum, Vol.561-565, pp.1181-1184, 2007.11.
135. T. Sadoh, K. Ueda, Y. Ando, M. Kumano, K. Narumi, Y. Maeda, and M. Miyao, Low-Temperature Epitaxial Growth of [Fe3Si/SiGe]n (n=1-2) Multi-Layered Structures for Spintronics Application, ECS Transactions, Vol.11, No.6, pp473-480, 2007.10.
136. T. Sadoh, H. Kamizuru, A. Kenjo, and M. Miyao, Ge-Channel Thin-Film Transistor with Schottky Source / Drain Fabricated by Low-Temperature Processing , Jpn. J. Appl. Phys., Vol.46, No.3B, pp.1250-1253 , 2007.03.
137. T. Sadoh, H. Kamizuru, A. Kenjo, and M. Miyao, Low-temperature formation (<500°C) of poly-Ge thin-film transistor with NiGe Schottky source/drain:, Appl. Phys. Lett., Vol.89, No.19, 192114, pp1-3, 2006.11.
138. T. Sadoh, M. Kumano, R. Kizuka, K. Ueda, A. Kenjo, and M. Miyao, Atomically controlled molecular beam epitaxy of ferromagnetic silicide Fe3Si on Ge
, Appl. Phys. Lett. , Vol.89, No.18, 182511, pp1-3 , 2006.10.
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