Kyushu University Academic Staff Educational and Research Activities Database
Researcher information (To researchers) Need Help? How to update
Kazunori Koga Last modified date:2019.06.24



Graduate School
Undergraduate School


E-Mail
Homepage
http://plasma.ed.kyushu-u.ac.jp
Fax
092-802-3717
Academic Degree
Doctor of Science
Field of Specialization
Plasma Engineering
Research
Research Interests
  • Study on high rate deposition of high quality materials for solar cells
    keyword : amorphous silicon
    1999.04.
  • Forth generation plasma-bio technology
    keyword : cell activation control
    2009.04.
  • Study on formation mechanism and control of particles in processing plasmas

    keyword : processing plasma, particle
    1999.04.
  • Study on particle formation mechanism due to interaction between plasma and carbon wall
    keyword : plasma wall interaction, nuclear fusion
    2001.01.
  • Development of Cu interconnect in next generation LSI
    keyword : Cu interconnect
    1999.04.
  • Development of deposition of low-k dielectrics for next generation LSI
    keyword : low-k dielectrics
    2002.01.
Academic Activities
Books
1. Low Temperature Deposition of Hard Carbon Thin Films Using Plasma Anisotropic Chemical Vapor Deposition Method.
2. Coagulation and Transport of Fine Particles in Processing Plasmas.
3. Kazunori Koga, Masaharu Shiratani, Yukio Watanabe, Deposition of a-Si: H Films with High Stability against Light Exposure by Reducing Deposition of Nanoparticles Formed in SiH4 Discharges (Industrial Plasma Technology: Applications from Environmental to Energy Technologies), WILEY-VCH Verlag GmbH & Co, 20, pp.247-257, 2010.05.
4. Shinya Iwashita, Hiroshi Miyata, Kazunori Koga, Masaharu Shiratani, Nanoblock Assembly Using Pulse RF Discharges with Amplitude Modulation (Industrial Plasma Technology: Applications from Environmental to Energy Technologies), WILEY-VCH Verlag GmbH & Co, 31, pp.377-383, 2010.05.
5. Towards Revolutionary Amorphous Silicon Solar Cells without Light-Induced Degradation.
Papers
1. Pankaj Attri, Fumiyoshi Tochikubo, Ji Hoon Park, Eun Ha Choi, Kazunori Koga, Masaharu Shiratani, Impact of Gamma rays and DBD plasma treatments on wastewater treatment, Scientific reports, 10.1038/s41598-018-21001-z, 8, 1, 2018.12, The rapid growth in world population brings with it the need for improvement in the current technology for water purification, in order to provide adequate potable water to everyone. Although an advanced oxidation process has been used to purify wastewater, its action mechanism is still not clear. Therefore, in the present study we treat dye-polluted water with gamma rays and dielectric barrier discharge (DBD) plasma. We study the wastewater treatment efficiency of gamma rays and DBD plasma at different absorbed doses, and at different time intervals, respectively. Methyl orange and methylene blue dyes are taken as model dyes. To understand the effects of environment and humidity on the decolorization of these dyes, we use various gas mixtures in the DBD plasma reactor. In the plasma reactor, we use the ambient air and ambient air + other gas (oxygen, nitrogen, and argon) mixtures, respectively, for the treatment of dyes. Additionally, we study the humidity effect on the decolorization of dyes with air plasma. Moreover, we also perform plasma simulation in different environment conditions, to understand which major radicals are generated during the plasma treatments, and determine their probable densities..
2. Yeonwon Kim, Kazunori Koga, Masaharu Shiratani, Particle behavior and its contribution to film growth in a remote silane plasma, Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 10.1116/1.5037539, 36, 5, 2018.09, Time-dependent behavior of particles measured using the laser light scattering method in a remote silane plasma has been investigated using both optical emission spectroscopy and quartz crystal microbalance. Laser-scattered particles were observed from 0.3 s after the plasma ignition and scattering increased rapidly until 3.0 s. In the 0-0.3 s region where no particles were observed, SiH and Hβ emission intensity as well as Si/SiH and Hβ/SiH intensity ratios increased rapidly. Laser-scattered particles decreased in number, 3.0 s after plasma discharge, but the deposition rate measured using the quartz crystal microbalance increased linearly. The relationships between time-resolved images of particle movements and their contribution to film deposition as well as plasma characteristics such as SiH and Hβ are presented. The results show that the particles contributing to film growth at the early stage of plasma are much higher in number than those in the stabilized state..
3. Taojun Fang, Kenji Yamaki, Kazunori Koga, Daisuke Yamashita, Hyunwoong Seo, Naho Itagaki, Masaharu Shiratani, Kosuke Takenaka, Yuichi Setsuhara, The effect of the H2/(H2 + Ar) flow-rate ratio on hydrogenated amorphous carbon films grown using Ar/H2/C7H8 plasma chemical vapor deposition, Thin Solid Films, 10.1016/j.tsf.2018.02.035, 660, 891-898, 2018.08, To produce hydrogenated amorphous carbon (a-C:H) films with high mass density at a high deposition rate and low substrate bias voltage, we deposited these films on a Si substrate by plasma chemical vapor deposition, using toluene as a source compound and varying the gas flow-rate ratio of H2/(H2 + Ar). By decreasing the gas flow-rate ratio from 55% to 11%, the hydrogen content in the films decreased, and the density of sp3 carbon atoms in the films increased, whereas their surface roughness increased. At the gas flow-rate ratio of 11%, we produced a-C:H films with a high bulk density of 1830 kg/m3 at a high deposition rate of 81.1 nm/min..
4. S. Toko, R. Katayama, K. Koga, E. Leal-Quiros, M. Shiratani , Dependence of CO2 Conversion to CH4 on CO2 Flow Rate in Helicon Discharge Plasma, Sci. Adv. Mater., 10.1166/sam.2018.3141, 10, 5, 655-659, 2018.05.
5. H. Seo, D. Sakamoto, H. Chou, N. Itagaki, K. Koga, M. Shiratani , Progress in photovoltaic performance of organic/inorganic hybrid solar cell based on optimal resistive Si and solvent modified poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) junction, Progress in Photovoltaics: Research and Applications, 10.1002/pip.2961, 26, 2, 145-150, 2018.02.
6. Nanoka Miyahara, Kazuya Iwasaki, Daisuke Yamashita, Daisuke Nakamura, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani, Naho Itagaki, Photoluminescence of (Zno)
0.82
(inn)
0.18
films
Incident light angle dependence, 10th International Conference on Processing and Manufacturing of Advanced Materials, 2018 THERMEC 2018, 10.4028/www.scientific.net/MSF.941.2099, 2099-2103, 2018.01, We have fabricated a new semiconducting material, (ZnO)
x
(InN)
1-x
(called ZION hereafter), which is a pseudo-binary alloy of wurtzite ZnO (band gap: 3.4 eV) and wurtzite InN (band gap: 0.7 eV). We have succeeded in fabricating epitaxial (ZnO)
0.82
(InN)
0.18
films on ZnO templates by RF magnetron sputtering. XRD measurements show that the full width at half maximum of the rocking curves from (101) plane and (002) plane are significantly small of 0.11˚ and 0.16˚, respectively, indicating good in-plane and out-of-plane crystal alignment. High crystal quality of the films was also proved by deducing the defect density from XRD analysis showing that the edge type dislocation density is low of 8.2×10
8
cm
-2
. Furthermore, we observed room temperature photoluminescence from ZION films as a parameter of incident angle of He-Cd laser light. The results indicate that an emission peak of 2.79 eV is originated from ZION..
7. Naho Itagaki, Kazuto Takeuchi, Nanoka Miyahara, Kouki Imoto, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani, Effects of sputtering pressure on (Zno)
x
(inn)
1-x
crystal film growth at 450ºc, 10th International Conference on Processing and Manufacturing of Advanced Materials, 2018 THERMEC 2018, 10.4028/www.scientific.net/MSF.941.2093, 2093-2098, 2018.01, We studied effects of sputtering pressure on growth of (ZnO)
x
(InN)
1-x
crystal films deposited at 450ºC by rf magnetron sputtering. Epitaxial growth of (ZnO)
x
(InN)
1-x
films was realized on single-crystalline ZnO template. X-ray diffraction measurements show that full width at half maximum of the rocking curves from the (101) plane of the films reaches minimum value of 0.11˚ at 0.5 Pa. The sputtering gas pressure is a key tuning knob for controlling the crystal quality of ZION films..
8. Ren Zhou, Kento Mori, Hiroshi Ohtomo, Daisuke Yamashita, Hyunwoong Seo, Naho Itagaki, Kazunori Koga, Masaharu Shiratan, Cross-correlation analysis of fluctuations of interactions between nanoparticles and low pressure reactive plasmas, 10th International Conference on Processing and Manufacturing of Advanced Materials, 2018 THERMEC 2018, 10.4028/www.scientific.net/MSF.941.2104, 2104-2108, 2018.01, We analyzed fluctuations of interactions between low pressure reactive plasmas and nanoparticles formed in the plasmas, to shed light on origins of fluctuations of interactions and to control fluctuations in plasma processes. Spatiotemporal fluctuations of nanoparticle density develop not only in a linear way but also in a nonlinear way. The results suggest nonlinear interactions potentially induce spatial and temporal process fluctuations..
9. T. Kawasaki, G. Kuroeda, R. Sei, M. Yamaguchi, R. Yoshinaga, R. Yamashita, H. Tasaki, K. Koga, M. Shiratani, Transportation of reactive oxygen species in a tissue phantom after plasma irradiation, Jpn. J. Appl. Phys. , 10.7567/JJAP.57.01AG01, 57, 1S, 01AG01, 2017.11.
10. Sota Tanami, Daiki Ichida, Shinji Hashimoto, Hyunwoong Seo, Daisuke Yamashita, Naho Itagaki, Kazunori Koga, Masaharu Shiratani, Low temperature rapid formation of Au-induced crystalline Ge films using sputtering deposition, Thin Solid Films, 10.1016/j.tsf.2017.02.067, 641, 59-64, 2017.11, We report low temperature (100–170 °C) and rapid (10 min) formation of crystalline Ge films between Au catalyst film and quartz glass substrate using a radio frequency magnetron sputtering deposition. The formation rate of crystalline Ge films between Au catalyst film and quartz glass substrate is proportional to the deposition rate of Ge film, namely the flux of Ge atoms. To obtain insights on the formation mechanism of crystalline Ge films, we studied dependence of grain size of Au films on annealing temperature and Au film thickness. Crystalline Ge films formed below Au films have random crystalline orientation with in-plane grain size from below 1 μm. Small crystalline grain size of Au films is needed to form rapidly Au induced crystalline Ge films..
11. S. Toko, K. Keya, Y. Torigoe, T. Kojima, H. Seo, N. Itagaki, K. Koga, M. Shiratani , Hysteresis in volume fraction of clusters incorporated into a-Si:H films deposited by SiH4 plasma chemical vapor deposition, Surf. Coat. Technol., 10.1016/j.surfcoat.2017.01.034, 326, Part B, 388-394, 2017.10.
12. P. Attri, M. Kim, E. H. Choi, A. E. Cho, K. Koga, M. Shiratani, Impact of an ionic liquid on protein thermodynamics in the presence of cold atmospheric plasma and gamma rays, Phys. Chem. Chem. Phys., 10.1039/c7cp04083k, 19, 37, 25277-25288, 2017.10.
13. H. Seo, C. V.V.M. Gopi, H.-J. Kim, N. Itagaki, K. Koga, M. Shiratani, Performance enhancement of quantum dot-sensitized solar cells based on polymer nano-composite catalyst, Electrochimica Acta, 10.1016/j.electacta.2017.08.030, 249, 337-342, 2017.09.
14. P. Attri, M. Kim, T. Sarinont, E. H. Choi, H. Seo, A. E. Cho, K. Koga, M. Shiratani, The protective action of osmolytes on the deleterious effects of gamma rays and atmospheric pressure plasma on protein conformational changes, Scientific Reports, 10.1038/s41598-017-08643-1, 7, 8698, 2017.08.
15. Y. Takeiri, T. Morisaki, M. Osakabe, M. Yokoyama, S. Sakakibara, H. Takahashi, Y. Nakamura, T. Oishi, G. Motojima, S. Murakami, K. Ito, A. Ejiri, S. Imagawa, Inagaki Shigeru, M. Isobe, S. Kubo, S. Masamune, T. Mito, I. Murakami, K. Nagaoka, K. Nagasaki, K. Nishimura, M. Sakamoto, R. Sakamoto, T. Shimozuma, K. Shinohara, H. Sugama, K. Y. Watanabe, J. W. Ahn, N. Akata, T. Akiyama, N. Ashikawa, J. Baldzuhn, T. Bando, E. Bernard, F. Castejón, H. Chikaraishi, M. Emoto, T. Evans, N. Ezumi, K. Fujii, H. Funaba, M. Goto, T. Goto, D. Gradic, Y. Gunsu, S. Hamaguchi, H. Hasegawa, Y. Hayashi, C. Hidalgo, T. Higashiguchi, Y. Hirooka, Y. Hishinuma, R. Horiuchi, K. Ichiguchi, K. Ida, T. Ido, H. Igami, K. Ikeda, S. Ishiguro, R. Ishizaki, A. Ishizawa, A. Ito, Y. Ito, A. Iwamoto, S. Kamio, K. Kamiya, O. Kaneko, R. Kanno, H. Kasahara, D. Kato, T. Kato, K. Kawahata, G. Kawamura, M. Kisaki, S. Kitajima, W. H. Ko, M. Kobayashi, S. Kobayashi, T. Kobayashi, Kazunori Koga, A. Kohyama, R. Kumazawa, J. H. Lee, D. López-Bruna, R. Makino, S. Masuzaki, Y. Matsumoto, H. Matsuura, O. Mitarai, H. Miura, J. Miyazawa, N. Mizuguchi, Chanho Moon, S. Morita, T. Moritaka, K. Mukai, T. Muroga, S. Muto, T. Mutoh, T. Nagasaka, Y. Nagayama, N. Nakajima, Y. Nakamura, H. Nakanishi, H. Nakano, M. Nakata, Y. Narushima, D. Nishijima, A. Nishimura, S. Nishimura, T. Nishitani, M. Nishiura, Y. Nobuta, H. Noto, M. Nunami, T. Obana, K. Ogawa, S. Ohdachi, M. Ohno, N. Ohno, H. Ohtani, M. Okamoto, Y. Oya, T. Ozaki, B. J. Peterson, M. Preynas, S. Sagara, K. Saito, H. Sakaue, A. Sanpei, S. Satake, M. Sato, T. Saze, O. Schmitz, R. Seki, T. Seki, I. Sharov, A. Shimizu, Masaharu Shiratani, M. Shoji, C. Skinner, R. Soga, T. Stange, C. Suzuki, Y. Suzuki, S. Takada, K. Takahata, A. Takayama, S. Takayama, Y. Takemura, Y. Takeuchi, H. Tamura, N. Tamura, H. Tanaka, K. Tanaka, M. Tanaka, T. Tanaka, Y. Tanaka, S. Toda, Y. Todo, K. Toi, M. Toida, M. Tokitani, T. Tokuzawa, H. Tsuchiya, T. Tsujimura, K. Tsumori, S. Usami, J. L. Velasco, H. Wang, T. H. Watanabe, T. Watanabe, J. Yagi, M. Yajima, H. Yamada, I. Yamada, O. Yamagishi, N. Yamaguchi, Y. Yamamoto, N. Yanagi, R. Yasuhara, E. Yatsuka, N. Yoshida, M. Yoshinuma, S. Yoshimura, Y. Yoshimura, Extension of the operational regime of the LHD towards a deuterium experiment, Nuclear Fusion, 10.1088/1741-4326/aa7fc2, 57, 10, 2017.08, As the finalization of a hydrogen experiment towards the deuterium phase, the exploration of the best performance of hydrogen plasma was intensively performed in the large helical device. High ion and electron temperatures, T
i
and T
e
, of more than 6 keV were simultaneously achieved by superimposing high-power electron cyclotron resonance heating onneutral beam injection (NBI) heated plasma. Although flattening of the ion temperature profile in the core region was observed during the discharges, one could avoid degradation by increasing the electron density. Another key parameter to present plasma performance is an averaged beta value . The high regime around 4% was extended to an order of magnitude lower than the earlier collisional regime. Impurity behaviour in hydrogen discharges with NBI heating was also classified with a wide range of edge plasma parameters. The existence of a no impurity accumulation regime, where the high performance plasma is maintained with high power heating >10 MW, was identified. Wide parameter scan experiments suggest that the toroidal rotation and the turbulence are the candidates for expelling impurities from the core region..
16. K. Koga, H. Seo, A. Tanaka, N. Itagaki, M. Shiratani, Synthesis of Nanoparticles using Low Temperature Plasmas and Its Application to Solar Cells and Tracers in Living Body , ECS Transactions, 10.1149/07703.0017ecst, 77, 3, 17-24, 2017.05.
17. T. Sarinont, R. Katayama, Y. Wada, K. Koga, M. Shiratani, Plant Growth Enhancement of Seeds Immersed in Plasma Activated Water, MRS Advances, 10.1557/adv.2017.178, 2, 18, 995-1000, 2017.02.
18. K. Matsushima, T. Ide, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Densities and surface reaction probabilities of oxygen and nitrogen atoms during sputter deposition of ZnInON on ZnO, IEEE Trans. Plasma Science, 10.1109/TPS.2016.2632124, 45, 2, 323-327, 2017.01.
19. Akira Yonesu, Kazunori Koga, Masaharu Shiratani, Nobuya Hayashi, Influence of plasma irradiation on silkworm, Plasma Medicine, 7, 4, 313-320, 2017.01, Silkworms have recently been proposed as an animal model for safety testing in basic research. We propose using silkworms for in vivo trials of direct plasma treatment. In this study, the influence of plasma irradiation on silkworms was investigated using a non-thermal atmospheric pressure plasma. Silkworm survival rate decreased with increasing low-frequency voltage and plasma irradiation period. Further investigation of the plasma-generated agents (oxygen related radicals, UV light, and charged particles), revealed that the contribution of charged particles significantly increases silkworm mortality..
20. Koichi Matsushima, Kazuya Iwasaki, Nanoka Miyahara, Daisuke Yamashita, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani, Naho Itagaki, Blue Photoluminescence of (ZnO)0.92(InN)0.08, MRS Advances, 10.1557/adv.2016.625, 2, 5, 277-282, 2017.01, We have fabricated ZnInON (ZION), which is a pseudo-binary alloy of wurtzite ZnO and wurtzite InN and has a tunable band gap over the entire visible spectrum and a high optical absorption coefficient of 105 cm-1. ZION films grow two dimensionally at Ts = room temperature (RT) and 150°C, whereas they grow three dimensionally at Ts = 250 and 450°C. These films at RT and 150°C show a step-terrace structure with the step height of 0.27 nm, which corresponds to the height of a single-atomic-layer step and the half length of the c-lattice parameter of ZION. ZION film has the same a-lattice parameter of 0.325 nm as ZnO and a longer c-lattice parameter of 0.536 nm, indicating the coherent growth of ZION films on ZnO templates. ZION film grown at RT shows blue (2.89 and 3.08 eV) photoluminescence at RT..
21. K. Iwasaki, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki , Effects of sputtering gas pressure dependence of surface morphology of ZnO films fabricated via nitrogen mediated crystallization, MRS Advances, 10.1557/adv.2016.617, 2, 5, 265-270, 2016.12.
22. K. Matsushima, K. Iwasaki, N. Miyahara, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Blue Photoluminescence of (ZnO)0.92(InN)0.08, MRS Advances, 10.1557/adv.2016.625P, 2, 5, 277-282, 2016.12.
23. G. Uchida, A. Nakajima, T. Ito, K. Takenaka, T. Kawasaki, K. Koga, M. Shiratani, Y. Setsuhara, Effects of nonthermal plasma jet irradiation on the selective production of H2O2 and NO2- in liquid water, J. Appl. Phys., 10.1063/1.4968568, 120, 20, 203302-1 - 203302-9, 2016.11.
24. Masahiro Soejima, Kazunori Koga, Masaharu Shiratani, Inter-particle potential fluctuation of two fine particles suspended in Ar plasmas, 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 16th International Conference on Nanotechnology - IEEE NANO 2016, 10.1109/NANO.2016.7751376, 671-673, 2016.11, We have analyzed inter-particle potential during binary collision of two fine particles suspended at the plasma/sheath boundary. For this analysis, we have employed a tracking analysis which gives time evolution of the particle position automatically from the movie of particle behavior. The fluctuation of inter-particle potential is originated from a major component of the plasma potential fluctuation and minor one of the particle charge fluctuation. The tracking analysis of fine particles is a promising method to provide fluctuation of plasma potential with ultrahigh sensitivity at a local position..
25. M. Shiratani, M. Soejima, H. Seo, N. Itagaki, K. Koga , Fluctuation of Position and Energy of a Fine Particle in Plasma Nanofabrication, Materials Science Forum, 10.4028/www.scientific.net/MSF.879.1772, 879, 1772-1777 , 2016.11.
26. S. Toko, Y. Kanemitsu, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Optical Bandgap Energy of Si Nanoparticle Composite Films Deposited by a Multi-Hollow Discharge Plasma Chemical Vapor Deposition Method, J. Nanosci. Nanotechnol., 10.1166/jnn.2016.13233, 16, 10, 10753-10757, 2016.10.
27. Thapanut Sarinont, Takaaki Amano, Pankaj Attri, Kazunori Koga, Nobuya Hayashi, Masaharu Shiratani, Effects of plasma irradiation using various feeding gases on growth of Raphanus sativus L., Archives of Biochemistry and Biophysics, 10.1016/j.abb.2016.03.024, 605, 129-140, 2016.09, In this work, we have studied the action of dielectric barrier discharge (DBD) plasma irradiation using various feeding gases on seeds of Raphanus sativus L. and analysis their growth. Our experimental data shows that Air, O2, and NO(10%)+N2 feeding gases plasma irradiation enhanced plant growth, whereas N2, He and Ar feeding gases plasma irradiation had little influence on plant growth. Moreover, humid air plasma irradiation was more effective in growth enhancement than dry one. More than 2.3 times faster growth was observed by 3 min air plasma irradiation with 40–90% relative humidity. The reactive species generated by plasma in gas phase were detected using optical emission spectroscopy and in liquid phase by electron spin resonance (ESR) spectroscopy. We concluded that OH and O radicals were key species for plant growth enhancement..
28. H. Seo, M. K. Son, S. Hashimoto, T. Takasaki, N. Itagaki, K. Koga, M. Shiratani, Surface Modification of Polymer Counter Electrode for Low Cost Dye-sensitized Solar Cells, Electrochimica Acta, 10.1016/j.electacta.2016.06.020, 210, 880-887, 2016.08.
29. H. Seo, S. H. Nam, N. Itagaki, K. Koga, M. Shiratani, and J.-H. Boo, Effect of Sulfur Doped TiO2 on Photovoltaic Properties of Dye-Sensitized Solar Cells, Electron. Mater. Lett., 10.1007/s13391-016-4018-8, 12, 4, 530-536, 2016.07.
30. Toshiyuki Kawasaki, Akihiro Sato, Shota Kusumegi, Akihiro Kudo, Tomohiro Sakanoshita, Takuya Tsurumaru, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani, Two-dimensional concentration distribution of reactive oxygen species transported through a tissue phantom by atmospheric-pressure plasma-jet irradiation, Applied Physics Express, 10.7567/APEX.9.076202, 9, 7, 2016.07, The two-dimensional concentration distribution of reactive oxygen species (ROSs) transported through an agarose-film tissue phantom by atmospheric-pressure plasma-jet irradiation is visualized using a KI-starch gel reagent. Oxygen addition to helium enhances ROS transportation through the film. A radial ROS distribution pattern at the plasma-irradiated film surface changes into a doughnut-shaped pattern after passing through the film. The ROS transportation speed is 0.14-0.2mm/min. We suggest that there are two types of ROS transportation pathways in the plasma-irradiated film: linear and circular. The majority of ROSs are transported through the circular pathway. ROS concentration distributions changed markedly with irradiation distance. Diffusive ROS transportation due to a concentration gradient is negligible in plasma-irradiated films..
31. K. Keya, T. Kojima, Y. Torigoe, S. Toko, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Correlation between SiH2/SiH and light-induced degradation of p–i–n hydrogenated amorphous silicon solar cells, Jpn. J. Appl. Phys. , 10.7567/JJAP.55.07LE03, 55, 7S2, 07LE03, 2016.07.
32. H. Seo, D. Ichida, S. Hashimoto, N. Itagaki, K. Koga, M. Shiratani, S. H. Nam and J. H. Boo , Improvement of Charge Transportation in Si Quantum Dot-Sensitized Solar Cells Using Vanadium Doped TiO2, J. Nanosci. Nanotechnol., 10.1166/jnn.2016.12210, 16, 5, 4875-4879, 2016.05.
33. T. Kawasaki, S. Kusumegi, A. Kudo, T. Sakanoshita, T. Tsurumaru, A. Sato, G. Uchida, K. Koga and M. Shiratani, Effects of irradiation distance on supply of reactive oxygen species to the bottom of a Petri dish filled with liquid by an atmospheric O2/He plasma jet, J. Appl. Phys., 10.1063/1.4948430, 119, 173301, 2016.05.
34. M. Shiratani, T. Sarinont, K. Koga and N. Hayashi, R&D status of agricultural applications of high voltage and plasma in Japan, Proc. Workshop on Application of Advanced Plasma Technologies in CE Agriculture, 29-30, 2016.04.
35. Thapanut Sarinont, Yosuke Wada, Kazunori Koga, Masaharu Shiratani, Response of silkworm larvae to atmospheric pressure nonthermal plasma irradiation, Plasma Medicine, 10.1615/PlasmaMed.2017019137, 6, 3-4, 349-359, 2016.03, Responses of fifth-instar silkworm (Bombyx mori L.) larvae to plasma irradiation were studied using atmospheric pressure dielectric barrier discharge plasma. The growth rate decreased sharply until the day after plasma irradiation and was dependent on the duration of plasma irradiation. Growth rates were similar after irradiation for 60 s and 300 s, but after 600 s, the rate was lower than that after 60 s. The total weight of silkworm larvae decreased as the number of plasma irradiations was increased from one to three. The weight of silk cocoons produced after a single plasma irradiation was 11% heavier than for non-irradiated larvae, whereas the cocoons were 6% and 13% lighter after three and five periods of plasma irradiation, respectively. We conclude that plasma irradiation to fifth-instar silkworm larvae had little effect on silk protein and silk surface morphology..
36. H. Seo, G. Uchida, N. Itagaki, K. Koga, and M. Shiratani , Quantum Characterization of Si Nano-Particles Fabricated by Multi-Hollow Discharge Plasma Chemical Vapor Deposition, Sci. Adv. Mater., 10.1166/sam.2016.2520, 8, 3, 636-639, 2016.03.
37. H. Seo, M.-K. Son, N. Itagaki, K. Koga, M. Shiratani, Polymer Counter Electrode of Poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) Containing TiO2 Nano-particles for Dye-sensitized Solar Cells, Journal of Power Sources, 10.1016/j.jpowsour.2015.12.112, 307, 25-30, 2016.03.
38. K. Matsushima, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Room Temperature Fabrication of (ZnO)x(InN)1-x films with Step-Terrace Structure by RF Magnetron Sputtering, MRS Advances, 10.1557/adv.2015.59, 1, 2, 115-119, 2016.01.
39. T. Amano, T. Sarinont, K. Koga, M. Hirata, A. Tanaka, M. Shiratani, Production of In, Au, and Pt nanoparticles by discharge plasmas in water for assessment of their bio-compatibility and toxicity, MRS Advances, 10.1557/adv.2016.41, 1, 18, 1301-1306, 2016.01.
40. M. Shiratani, T. Sarinont, T. Amano, N. Hayashi, K. Koga, Plant Growth Response to Atmospheric Air Plasma Treatments of Seeds of 5 Plant Species, MRS Advances, 10.1557/adv.2016.37, 1, 18, 1265-1269, 2016.01.
41. K. Koga, T. Sarinont, T. Amano, H. Seo, N. Itagaki, N. Hayashi, M. Shiratani, Simple method of improving harvest by nonthermal air plasma irradiation of seeds of Arabidopsis thaliana (L.), Appl. Phys. Express, 10.7567/APEX.9.016201, 9, 016201, 2015.12.
42. P. Attri, T. Sarinont, M. Kim, T. Amano, K. Koga, A. E. Cho, E. Choi, M. Shiratani, Influence of ionic liquid and ionic salt on protein against the reactive species generated using dielectric barrier discharge plasma , Scientific Reports, 10.1038/srep17781, 5, 17781 , 2015.12.
43. G. Uchida, A. Nakajima, K. Takenaka, K. Koga, M. Shiratani, Y. Setsuhara, Gas flow rate dependence of the discharge characteristics of a plasma jet impinging onto the liquid surface, IEEE Trans. Plasma Science, 10.1109/TPS.2015.2488619, 43, 12, 4081-4087, 2015.12.
44. S. Toko, Y. Torigoe, K. Keya, H. Seo, N. Itagaki, K. Koga, and M. Shiratani, Effects of Gas Flow Rate on Deposition Rate and Amount of Si Clusters Incorporated into a-Si:H Films, Jpn. J. Appl. Phys. , 10.7567/JJAP.55.01AA19, 55, 1S, 01AA19, 2015.12.
45. T. Amano, T. Sarinont, K. Koga, M. Hirata, A. Tanaka, M. Shiratani, Synthesis of Indium-Containing Nanoparticles in Aqueous Suspension Using Plasmas in Water for Evaluating Their Kinetics in Living Body, J. Nanosci. Nanotechnol., 10.1166/jnn.2015.11427, 15, 11, 9298-9302, 2015.11.
46. X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori, Effects of deposition rate and ion bombardment on properties of a-C:H films deposited by H-assisted plasma CVD method, Jpn. J. Appl. Phys. , 10.7567/JJAP.55.01AA11, 55, 1S, 01AA11, 2015.11.
47. T. Amano, K. Koga, T. Sarinont, H. Seo, N. Itagaki, M. Shiratani, S. Kitazaki, M. Hirata, Y. Nakatsu, A. Tanaka, Synthesis of indium-containing nanoparticles using plasmas in water to study their effects on living body, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, LW1.158, 2015.10.
48. S. Tanami, D. Ichida, D. Hashimoto, G. Uchida, H. Seo, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Substrate temperature dependence of Au-induced crystalline Ge film formation using sputtering deposition, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, GT1.149, 2015.10.
49. H. Seo, S. Hashimoto, D. Ichida, N. Itagaki, K. Koga and M. Shiratani , Structural alternation of tandem dye-sensitized solar cells based on mesh-type of counter electrode, Electrochimica Acta, 10.1016/j.electacta.2015.04.105, 179, 206-210, 2015.10.
50. K. Koga, T. Sarinont, T. Amano, H. Seo, N. Itagaki, Y. Nakatsu, A. Tanaka, M. Shiratani, Simple Evaluation Method of Atmospheric Plasma Irradiation Dose using pH of Water, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, LW1.143, 2015.10.
51. K. Keya, Y. Torigoe, S. Toko, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Raman spectroscopy of PIN hydrogenated amorphous silicon solar cells, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, LW1.132, 2015.10.
52. X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori, Raman Spectroscopy of a-C:H Films Deposited Using Ar + H2+ C7H8 Plasma CVD, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, GT1.145, 2015.10.
53. T. Takasaki, T. Ide, K. Matsushima, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M, Shiratani, N. Itagaki, Measurements of nitrogen atom density in N2/Ar sputtering plasma for fabrication of high-mobility amorphous In2O3:Sn films, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, GT1.150, 2015.10.
54. K. Matsushima, T. Ide, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M, Shiratani, N. Itagaki, Measurements of absolute densities of nitrogen and oxygen atoms in sputtering plasma for fabrication of ZnInON films, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, GT1.154, 2015.10.
55. T. Ide, K. Matsushima, T. Takasaki, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M, Shiratani, N. Itagaki, Measurement of absolute density of N atom in sputtering plasma for epitaxial growth ZnO films via nitrogen mediated crystallization, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, GT1.155, 2015.10.
56. D. Yamashita, M. Soejima, T. Ito, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Laser trapped single fine particle as a probe of plasma parameters, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, LW1.104, 2015.10.
57. G. Uchida, A. Nakajima, T. Kawasaki, K. Koga, K. Takenaka, M. Shiratani, Y. Setsuhara, Gas flow rate dependence of the production of reactive oxygen species in liquid by a plasma-jet irradiation, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, TF1.2, 2015.10.
58. Y. Torigoe, K. Keya, S. Toko, H. Seo, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani, Effects of electrode structure on characteristics of multi-hollow discharges, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, LW1.129, 2015.10.
59. S. Hashimoto, S. Tanami, H. Seo, G. Uchida, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Effects of N2 dilution on fabrication of Ge nanoparticles by rf sputtering, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, LW1.133, 2015.10.
60. T. Sarinont, T. Amano, K. Koga, S. Kitazaki, N. Hayashi, M. Shiratani, Effects of Ambient Humidity on Plant Growth Enhancement by Atmospheric Air Plasma Irradiation to Plant Seeds, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, LW1.136, 2015.10.
61. Y. Setsuhara, G. Uchida, A. Nakajima, K. Takenaka, K. Koga, M. Shiratani, Discharge characteristics and hydrodynamics behaviors of atmospheric plasma jets produced in various gas flow patterns, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, LW1.58, 2015.10.
62. R. Katayama, K. Koga, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, M. Tokitani, S. Masuzaki, K. Nishimura, A. Sagara, LHD Experimental Group, Deposition rate and etching rate due to neutral radicals and dust particles measured using QCMs together with a dust eliminating filter, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, LW1.101, 2015.10.
63. T. Ito, M. Soejima, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani, T. Kobayashi, S. Inagaki, Cross correlation analysis of plasma perturbation in amplitude modulated reactive dusty plasmas, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, GT1.49, 2015.10.
64. S. Toko, Y. Torigoe, K. Keya, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Cluster Incorporation into A-Si:H Films Deposited Using H 2 +SiH 4 Discharge Plasmas, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, GT1.152, 2015.10.
65. M. Soejima, T. Ito, D. Yamashita, N. Itagaki, H. Seo, K. Koga, M. Shiratani, Attraction during binary collision of fine particles in Ar plasma, Proc. 68th GEC/9th ICRP/33rd SPP, 60, 9, GT1.18, 2015.10.
66. M. Tateishi, K. Koga, R. Katayama, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, and the LHD Experiment Group, Real-time mass measurement of dust particles deposited on vessel wall in a divertor simulator using quartz crystal microbalances, J. Nucl. Mater. , 10.1016/j.jnucmat.2014.10.049, 463, 865–868, 2015.08.
67. K. Matsushima, R. Shimizu, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Fabrication of ZnInON/ZnO multi-quantum well solar cells, Thin Solid Films, 10.1016/j.tsf.2015.01.012, 587, 106-111, 2015.07.
68. A. Nakajima, G. Uchida, T. Kawasaki, K. Koga, T. Sarinont, T. Amano, K. Takenaka, M. Shiratani, Y. Setsuhara, Effects of gas flow on oxidation reaction in liquid induced by He/O2 plasma-jet irradiation, J. Appl. Phys., 10.1063/1.4927217, 118, 4, 043301, 2015.07.
69. X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori, Effects of discharge voltage on the characteristics of a-C:H films prepared by H-assisted Plasma CVD method, Trans. Mater. Res. Soc. Jpn., 10.14723/tmrsj.40.123, 40, 2, 123-128, 2015.07.
70. K. Matsushima, R. Shimizu, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Fabrication of p-i-n solar cells utilizing ZnInON by RF magnetron sputtering, Mat. Res. Soc. Symp. Proc., 10.1557/opl.2015.248, 1741, aa09-10, 2015.03.
71. N. Itagaki, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani, ZnO-based semiconductors with tunable band gap for solar sell applications, Proc. SPIE photonics west 2015, 10.1117/12.2078114, 9364, 93640P, 2015.03.
72. T. Ide, K. Matsushima, R. Shimizu, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Effects of morphology of buffer layers on ZnO/sapphire heteroepitaxial growth by RF magnetron sputtering, Mat. Res. Soc. Symp. Proc., 10.1557/opl.2015.87, 1741, aa09-12, 2015.02.
73. A. Tanaka, M. Hirata, N. Matsumura, K. Koga, M. Shiratani, Y. Kiyohara, Comparative Study on the Pulmonary Toxicity of Indium Hydroxide, Indium-Tin Oxide, and Indium Oxide Following Intratracheal Instillations into the Lungs of Rats, Mat. Res. Soc. Symp. Proc., 10.1557/opl.2015.21, 1723, g02-03, 2015.02.
74. T. Sarinont, T. Amano, K. Koga, M. Shiratani, N. Hayashi, Effects of Atmospheric Air Plasma Irradiation to Seeds of Radish Sprouts on Chlorophyll and Carotenoids Concentrations in their Leaves, Mat. Res. Soc. Symp. Proc., 10.1557/opl.2015.39, 1723, g02-04, 2015.02.
75. T. Sarinont, T. Amano, K. Koga, M. Shiratani, N. Hayashi, Multigeneration Effects of Plasma Irradiation to Seeds of Arabidopsis Thaliana and Zinnia on Their Growth, Mat. Res. Soc. Symp. Proc., 10.1557/opl.2015.12, 1723, g03-04, 2015.01.
76. H. Seo, D. Ichida, S. Hashimoto, G. Uchida, N. Itagaki, K. Koga, and M. Shiratani, Photovoltaic application of Si nanoparticles fabricated by multihollow plasma discharge CVD: Dye and Si co-sensitized solar cells, Jpn. J. Appl. Phys. , 10.7567/JJAP.54.01AD02, 54, 1S, 01AD02, 2015.01.
77. Susumu Toko, Yoshihiro Torigoe, Weiting Chen, Daisuke Yamashita, Hyunwoong Seo, Naho Itagaki, Kazunori Koga, Masaharu Shiratani, Effects of cluster incorporation into hydrogenated amorphous silicon films in initial discharge phase on film stability, Thin Solid Films, 10.1016/j.tsf.2015.02.052, 587, 126-131, 2015.01, We studied the effects of incorporation of hydrogenated amorphous silicon (a-Si:H) nanoparticles (clusters) generated in the initial discharge phase on light induced degradation of a-Si:H films. The amount of clusters incorporated into the films in the initial discharge phase is 15 times larger than that in the steady state. To evaluate the effects of such initial cluster incorporation on stability of a-Si:H films, we fabricated a-Si:H Schottky cells with and without initial cluster incorporation using a multi-hollow discharge plasma chemical vapor deposition method with a shutter and compared cell stability against light exposure. The degradation ratio of the cell without initial cluster incorporation is less than 1% even after 100 hour light soaking of 2.7 suns. Our results show that suppressing initial cluster incorporation into a-Si:H films is a key to stable a-Si:H cells. Moreover, Si-H2 bonds in films can be reduced down to 1/10 using a cluster eliminating filter..
78. Shinya Iwashita, Edmund Schungel, Julian Schulze, Peter Hartmann, Zoltan Donko, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani, Uwe Czarnetzki, Dust hour glass in a capacitive RF discharge, IEEE Transactions on Plasma Science, 10.1109/TPS.2014.2343975, 42, 10, 2672-2673, 2014.10, Cyclic transport of dust particles (dust hour glass) in a capacitively coupled radio frequency discharge with horizontal electrodes is demonstrated. Dust transport toward the upper electrode is initiated by varying the electrical asymmetry of the discharge. A shaped upper electrode guides dust particles to move toward the center of the discharge. Subsequently, the dust drops through the plasma bulk spontaneously, this way returning to the starting location..
79. N. Itagaki, K. Matsushima, D. Yamashia, H. Seo, K. Koga, M. Shiratani, Synthesis and characterization of ZnInON semiconductor: a ZnO-based compound with tunable band gap, Mater. Res. Express, 10.1088/2053-1591/1/3/036405, 1, 3, 036405, 2014.09.
80. H. Seo, D. Ichida, S. Hashimoto, G. Uchida, N. Itagaki, K. Koga, and M. Shiratani, Performance enhancement of dye and Si quantum dot hybrid nanostructured solar cell with TiO2 barrier, Trans. Mater. Res. Soc. Jpn., 10.14723/tmrsj.39.321, 39, 3, 321-324, 2014.09.
81. N. Itagaki, K. Kuwahara, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani, Off-axis sputter deposition of ZnO films on c-sapphire substrates by utilizing nitrogen-mediated crystallization method, Opt. Engineering, 10.1117/1.OE.53.8.087109, 53, 8, 087109, 2014.08.
82. S. Iwashita, E. Schungel, J. Schulze, P. Hartmann, Z. Donko, G. Uchida, K. Koga, M. Shiratani, U. Czarnetzki, Dust Hour Glass in a Capacitive RF Discharge , IEEE Trans. Plasma Science, 10.1109/TPS.2014.2343975 , 42, 10, 2672-2673, 2014.08.
83. M. Shiratani, K. Kamataki, G. Uchida, K. Koga, H. Seo, N. Itagaki, T. Ishihara, SiC Nanoparticle Composite Anode for Li-Ion Batteries, Mat. Res. Soc. Symp. Proc., 10.1557/opl.2014.742, 1678, n08-58, 2014.07.
84. S. Kitazaki, T. Sarinont, K. Koga, N. Hayashi, M. Shiratani, Plasma induced long-term growth enhancement of Raphanus sativus L. using combinatorial atmospheric air dielectric barrier discharge plasmas, Curr. Appl. Phys., 10.1016/j.cap.2013.11.056, 14, 2, S149–S153, 2014.07.
85. T. Kawasaki, K. Kawano, H. Mizoguchi, Y. Yano, K. Yamashita, M. Sakai, T. Shimizu, G. Uchida, K. Koga, M. Shiratani, Visualization of the Distribution of Oxidizing Substances in an Atmospheric Pressure Plasma Jet , IEEE Trans. Plasma Science, 10.1109/TPS.2014.2325038, 42, 10, 2482-2483, 2014.06.
86. T. Ito, K. Koga, D. Yamashita, K. Kamataki, N. Itagaki, G. Uchida and M. Shiratani, Plasma etching of single fine particle trapped in Ar plasma by optical tweezers, J. Phys. : Conf. Series (SPSM26), 10.1088/1742-6596/518/1/012014, 518, 1, 012014, 2014.06.
87. T. Sarinont, T. Amano, S. Kitazaki, K. Koga, G. Uchida, M. Shiratani and N. Hayashi, Growth enhancement effects of radish sprouts: atmospheric pressure plasma irradiation vs. heat shock, J. Phys. : Conf. Series (SPSM26), 10.1088/1742-6596/518/1/012017, 518, 1, 012017, 2014.06.
88. K. Koga, X. Dong, S. Iwashita, U. Czarnetzki and M. Shiratani, Formation of carbon nanoparticle using Ar+CH4 high pressure nanosecond discharges, J. Phys. : Conf. Series (SPSM26), 10.1088/1742-6596/518/1/012020, 518, 1, 012020, 2014.06.
89. X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine and M. Hori, Emission spectroscopy of Ar + H-2+ C7H8 plasmas: C7H8 flow rate dependence and pressure dependence , J. Phys. : Conf. Series (SPSM26), 10.1088/1742-6596/518/1/012010, 518, 1, 012010, 2014.06.
90. Y. Hashimoto, S. Toko, D. Yamashita, H. Seo, K. Kamataki, N. Itagaki, K. Koga and M. Shiratani, Effects of filter gap of cluster-eliminating filter on cluster eliminating efficiency, J. Phys. : Conf. Series (SPSM26), 10.1088/1742-6596/518/1/012007, 518, 1, 012007, 2014.06.
91. D. Ichida, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga and M. Shiratani, Deposition of crystalline Ge nanoparticle films by high-pressure RF magnetron sputtering method, J. Phys. : Conf. Series (SPSM26), 10.1088/1742-6596/518/1/012002, 518, 1, 012002, 2014.06.
92. T. Kawasaki, K. Kawano, H. Mizoguchi, Y. Yano, K. Yamashita, M. Sakai, G. Uchida, K. Koga, M. Shiratani, Control of the area irradiated by the sheet-type plasma jet in atmospheric pressure, J. Phys. : Conf. Series (SPSM26), 10.1088/1742-6596/518/1/012016, 518, 1, 012016, 2014.06.
93. S. Toko, Y. Hashimoto, Y. Kanemitu, Y. Torigoe, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga and M. Shiratani, Contribution of ionic precursors to deposition rate of a-Si:H films fabricated by plasma CVD, J. Phys. : Conf. Series (SPSM26), 10.1088/1742-6596/518/1/012008, 518, 1, 012008, 2014.06.
94. M. Tateishi, K. Koga, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura and A. Sagara, the LHD Experimental Group, Contribution of H2 plasma etching to radial profile of amount of dust particles in a divertor simulator, J. Phys. : Conf. Series (SPSM26), 10.1088/1742-6596/518/1/012009, 518, 1, 012009, 2014.06.
95. H. Seo, D. Ichida, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Performance dependence of Si quantum dot-sensitized solar cells on counter electrode, Jpn. J. Appl. Phys. , 10.7567/JJAP.53.05FZ01, 53, 5S1, 05FZ01, 2014.05.
96. I. Suhariadi, K. Oshikawa, D. Yamashita, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, and N. Itagaki, Study on the Crystal Growth Mechanism of ZnO Films Fabricated Via Nitrogen Mediated Crystallization, Jpn. Phys. Soc. Conf. Proc (APPC12), 10.7566/JPSCP.1.015064, 1, 015064, 2014.03.
97. M. Tateishi, K. Koga, D. Yamashita, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, and the LHD Experimental Group, Spatial Profile of Flux of Dust Particles Generated due to Interaction between Hydrogen Plasmas and Graphite Target, Jpn. Phys. Soc. Conf. Proc (APPC12), 10.7566/JPSCP.1.015020, 1, 015020, 2014.03.
98. N. Itagaki, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani, Off-axis sputter deposition of ZnO films on c-sapphire substrates with buffer layers prepared via nitrogen-mediated crystallization, Proc. SPIE photonics west 2014, 10.1117/12.2041081 , 8987, 89871A, 2014.03.
99. H. Seo, M. Son, S. Park, M. Jeong, H. Kim, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Electrochemical impedance analysis on the additional layers for the enhancement on the performance of dye-sensitized solar cell, Thin Solid Films, 10.1016/j.tsf.2013.08.103, 554, 122-126, 2014.03.
100. G. Uchida, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Effects of H2 Gas Addition on Structure of Ge Nanoparticle Films Deposited by High-pressure RF Magnetron Sputtering Method, Jpn. Phys. Soc. Conf. Proc (APPC12), 10.7566/JPSCP.1.015082, 1, 015082, 2014.03.
101. S. Toko, Y. Kim, Y. Hashimoto, Y. Kanemitu, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, and M. Shiratani, Effects of Grid DC Bias on Incorporation of Si Clusters into Amorphous Silicon Thin Films in Multi-Hollow Discharge Plasma CVD, Jpn. Phys. Soc. Conf. Proc (APPC12), 10.7566/JPSCP.1.015069, 1, 015069, 2014.03.
102. T. Sarinont, K. Koga, S. Kitazaki, G. Uchida, N. Hayashi, M. Shiratani, Effects of Atmospheric Air Plasma Irradiation on pH of Water, JPS Conf. Proc., 10.7566/JPSCP.1.015078, 1, 015078, 2014.03.
103. X. Dong, R. Torigoe, K. Koga, G. Uchida, M. Shiratani, N. Itagaki, Y. Setsuhara, K. Takenaka, M. Sekine, .M. Hori, Deposition of Carbon Films on PMMA Using H-assisted Plasma CVD, Jpn. Phys. Soc. Conf. Proc (APPC12), 10.7566/JPSCP.1.015072, 1, 015072, 2014.03.
104. M. Shiratani, Y. Morita, K. Kamataki, H. Seo, G. Uchida, N. Itagaki, K. Koga, Correlation between nanoparticle growth and plasma parameters in low pressure reactive VHF discharge plasmas, Jpn. Phys. Soc. Conf. Proc (APPC12), 10.7566/JPSCP.1.015083, 1, 015083, 2014.03.
105. G. Uchida, Y. Kanemitsu, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Combinatorial Plasma CVD of Si Nanoparticle Composite Films for Band Gap Control, Jpn. Phys. Soc. Conf. Proc (APPC12), 10.7566/JPSCP.1.015080, 1, 015080, 2014.03.
106. T. Kawasaki, K. Kawano, H. Mizoguchi, Y. Yano, K. Yamashita, M. Sakai, G. Uchida, K. Koga, M. Shiratani, Visualization of oxidizing substances generated by atmospheric pressure non-thermal plasma jet with water, Proc. 8th Int. Conf. Reactive Plasmas, 4P-PM-S09-P25, 2014.02.
107. Y. Hashimoto, S. Toko, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Substrate temperature dependence of hydrogen content of a-Si:H film deposited with a cluster-eliminating filter, Proc. 8th Int. Conf. Reactive Plasmas, 6P-AM-S08-P37, 2014.02.
108. A. Tanaka, M. Hirata, K. Koga, N. Itagaki, M. Shiratani, N. Hayashi, G. Uchida, Subacute toxicity of gallium arsenide, indium arsenide and arsenic trioxide following intermittent intrantracheal instillations to the lung of rats, Proc. 8th Int. Conf. Reactive Plasmas, 5P-AM-S2-P35, 2014.02.
109. I. Suhariadi, K. Oshikawa, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Study on nitrogen desorption behavior of sputtered ZnO for transparent conducting oxide, Proc. 8th Int. Conf. Reactive Plasmas, 5P-PM-S08-P05, 2014.02.
110. R. Shimizu, K. Matsushima, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Sputtering fabrication of a novel widegap semiconductor ZnGaON for optoelectronic devices with wide bandgap for optical device, Proc. 8th Int. Conf. Reactive Plasmas, 5P-PM-S08-P03, 2014.02.
111. T. Nakanishi, K. Oshikawa, I. Suhariadi, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Sputter Deposition of Ga-doped Zinc Oxide (GZO) Films with Buffer Layers Fabricated via Nitrogen Mediated Crystallization, Proc. 8th Int. Conf. Reactive Plasmas, 5P-AM-S05-P19, 2014.02.
112. M. Tateishi, K. Koga, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, the LHD Experimental Group, Spatial profile of flux of dust particles in hydrogen helicon plasmas, Proc. 8th Int. Conf. Reactive Plasmas, 5P-AM-S05-P21, 2014.02.
113. D. Yamashita, K. Koga, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani, Raman spectroscopy of a fine particle optically trapped in plasma, Proc. 8th Int. Conf. Reactive Plasmas, 5P-AM-S05-P23, 2014.02.
114. H. Seo, D. Ichida, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Quantum characterization and photovoltaic application of Si nano-particles fabricated by multi-hollow plasma discharge chemical vapor deposition, Proc. 8th Int. Conf. Reactive Plasmas, 4P-PM-S11-P36, 2014.02.
115. X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, K. Takenaka, Y. Setsuhara, M. Sekine, M. Hori, Pressure dependence of carbon film deposition using H-assisted plasma CVD, Proc. 8th Int. Conf. Reactive Plasmas, 5P-PM-S08-P14, 2014.02.
116. T. Ito, Y. Morita, S. Iwashita, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Nanoparticle amount in reactive plasmas with amplitude modulation detected by twodimensional laser light scattering method, Proc. 8th Int. Conf. Reactive Plasmas, 5P-AM-SPD-P01, 2014.02.
117. K. Koga, T. Sarinont, S. Kitazaki, N. Hayashi, M. Shiratani, Multi-generation evaluation of plasma growth enhancement to arabidopsis thaliana (Invited), Proc. 8th Int. Conf. Reactive Plasmas, 6C-PM-A4, 2014.02.
118. K. Oshikawa, I. Suhariadi, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, N. Itagaki, Magnetron sputtering of low-resistive In2O3:Sn films with buffer layers fabricated via nitrogen mediated crystallization, Proc. 8th Int. Conf. Reactive Plasmas, 5P-PM-S08-P07, 2014.02.
119. T. Amano, T. Sarinont, S. Kitazaki, N. Hayashi, K. Koga, M. Shiratani, Long term growth of radish sprouts after atmospheric pressure DBD plasma irradiation to seeds, Proc. 8th Int. Conf. Reactive Plasmas, 5P-PM-S12-P33, 2014.02.
120. S. Toko, Y. Hashimoto, Y. Kanemitu, Y. Torigoe, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Fine response of deposition rate of Si films deposited by multi-hollow discharge plasma CVD with amplitude modulation, Proc. 8th Int. Conf. Reactive Plasmas, 5P-AM-S05-P17, 2014.02.
121. D. Ichida, S. Hashimoto, G. Uchida, H. Seo, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Fabrication of size-controlled Ge nanoparticle films varying gas flow rate using high pressure rf magnetron sputtering method, Proc. 8th Int. Conf. Reactive Plasmas, 6P-AM-S08-P33, 2014.02.
122. G. Uchida, K. Kamataki, D. Ichida, Y. Morita, H. Seo, N. Itagaki, K. Koga, T. Ishihara, M. Shiratani, Fabrication of SiC nanoparticles as high capacity electrodes for Li-ion batteries, Proc. 8th Int. Conf. Reactive Plasmas, 4C-PM-O1, 2014.02.
123. K. Matsushima, R. Shimizu, T. Ide, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki, Fabrication of In-rich ZnInON filmswith narrow band gap by RF magnetron sputtering, Proc. 8th Int. Conf. Reactive Plasmas, 5P-PM-S08-P02, 2014.02.
124. T. Ide, K. Matsushima, R. Shimizu, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Epitaxial growth of ZnO films on sapphire substrates by magnetron sputtering: Effects of buffer layers prepared via nitrogen mediated crystallization, Proc. 8th Int. Conf. Reactive Plasmas, 4P-PM-S08-P10, 2014.02.
125. T. Sarinont, K. Koga, S. Kitazaki, M. Shiratani, N. Hayashi, Effects of growth enhancement by plasma irradiation to seeds in water, Proc. 8th Int. Conf. Reactive Plasmas, 5P-PM-S12-P32, 2014.02.
126. Y. Torigoe, Y. Hashimoto, S. Toko, Y. Kim, D. Yamashita, H. Seo, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani, Effects of amplitude modulation on deposition of hydrogenated amorphous silicon films using multi-Hollow discharge plasma CVD method, Proc. 8th Int. Conf. Reactive Plasmas, 6P-AM-S08-P36, 2014.02.
127. S. Hashimoto, D. Ichida, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Deposition of Crystalline Ge Nanoparticle Films Varying H2 Dilution Ratio Using High Pressure rf Magnetron Sputtering, Proc. 8th Int. Conf. Reactive Plasmas, 6P-AM-S08-P32, 2014.02.
128. K. Koga, Y. Morita, K. Kamataki, D. Yamashita, N. Itagaki, G. Uchida, M. Shiratani, Coupling between radicals and nanoparticles in initial growth phase in reactive plasmas with amplitude modulation (Invited), Proc. 8th Int. Conf. Reactive Plasmas, 3B-WS-14, 2014.02.
129. Y. Kanemitsu, G. Uchida, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Combinatorial evaluation of optical properties of crystalline Si nanoparticle embedded Si films deposited by a multi-hollow discharge plasma CVD method, Proc. 8th Int. Conf. Reactive Plasmas, 6P-AM-S08-P35, 2014.02.
130. H. Seo, D. Ichida, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Analysis on the photovoltaic property of Si quantum dot-sensitized solar cells, Int. J. Precision Eng. Manuf., 10.1007/s12541-014-0343-8, 15, 2, 339-343, 2014.02.
131. Y. Morita, T. Ito, S. Iwashita, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Analysis of fluctuation of Ar metastable density and nanoparticle amount in capacitively coupled discharges with amplitude modulation, Proc. 8th Int. Conf. Reactive Plasmas, 5P-AM-S02-P10, 2014.02.
132. M. Shiratani, K. Koga, K. Kamataki, S. Iwashita, Y. Morita, H. Seo, N. Itagaki, G. Uchida, A model for correlation between plasma fluctuation and fluctuation of nanoparticle growth in reactive plasmas, Proc. 8th Int. Conf. Reactive Plasmas, 4B-PM-O1, 2014.02.
133. M. Shiratani, K. Koga, K. Kamataki, S. Iwashita, G. Uchida, H. Seo, and N. Itagaki, Theory for correlation between plasma fluctuation and fluctuation of nanoparticle growth in reactive plasmas, Jpn. J. Appl. Phys. , 10.7567/JJAP.53.010201, 53, 1, 010201, 2014.01.
134. Naho Itagaki, K. Matsushima, D. Yamashita, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani, Off-axis sputter deposition of ZnO films on c-sapphire substrates with buffer layers prepared via nitrogen-mediated crystallization, 5th Annual Oxide Based Materials and Devices Conference Oxide-Based Materials and Devices V, 10.1117/12.2041081, 2014.01, High-quality epitaxial ZnO films on c-plane sapphire substrates have been obtained by utilizing off-axis sputtering configuration together with buffer layers prepared via nitrogen mediated crystallization (NMC). The role of NMC buffer layers is to provide high density of nucleation site and thus to reduce the strain energy caused by the large lattice mismatch (18%) between ZnO and sapphire. The NMC buffer layers allow two dimensional (2D) growth of subsequently grown ZnO films, being particularly enhanced by employing off-axis sputtering configuration, in which the substrate is positioned out of the high-energy particles such as negative oxygen ions originating from the targets. As a result, ZnO films with smooth surfaces (root-mean-square roughness: 0.76 nm) and high electron mobility of 88 cm2/Vsec are fabricated. Photoluminescence spectra of the ZnO films show strong near-band-edge emission, and the intensity of the orange-red defect emission significantly decreases with increasing the horizontal distance between the target and the substrate. From these results, we conclude that off-axis sputtering together with NMC buffer layers is a promising method for obtaining high quality epitaxial ZnO films..
135. Masaharu Shiratani, Giichiro Uchida, Hyun Woong Seo, Daiki Ichida, Kazunori Koga, Naho Itagaki, Kunihiro Kamataki, Nanostructure control of Si and Ge quantum dots based solar cells using plasma processes, 8th International Conference on Processing and Manufacturing of Advanced Materials, THERMEC 2013 THERMEC 2013, 783-786, 2022-2027, 2014.01, We report characteristics of quantum dot (QD) sensitized solar cells using Si nanoparticles and Ge nanoparticles. Si nanoparticles were synthesized by multi-hollow discharge plasma chemical vapor deposition, whereas Ge nanoparticles were done by a radio frequency magnetron sputtering using Ar+H2 under high pressure conditions. The electrical power generation from Si QDs and Ge QDs was confirmed. Si QD sensitized solar cells show an efficiency of 0.024%, fill factor of 0.32, short-circuit current of 0.75 mA/cm2 and open-circuit voltage of 0.10 V, while Ge QD sensitized solar cells show an efficiency of 0.036%, fill factor of 0.38, short-circuit current of 0.64 mA/cm2 and open-circuit voltage of 0.15 V..
136. H. Seo, Y. Wang, M. Sato, G. Uchida, K. Koga, N. Itagaki, K. Kamataki, M. Shiratani, The improvement on the performance of quantum dot-sensitized solar cells with functionalized Si, Thin Solid Films, 10.1016/j.tsf.2013.04.073, 546, 284-288, 2013.11.
137. H. Seo, Y. Wang, D. Ichida, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, S. Nam, J. Boo, Improvement on the Electron Transfer of Dye-Sensitized Solar Cell Using Vanadium Doped TiO2, Jpn. J. Appl. Phys., 10.7567/JJAP.52.11NM02, 52, 11NM02, 2013.11.
138. K. Koga, M. Tateishi, K. Nishiyama, G. Uchida, K. Kamataki, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, Akiko Sagara, the LHD Experimental Group, Flux Control of Carbon Nanoparticles Generated due to Interactions between Hydrogen Plasmas and Graphite Using DC-Biased Substrates, Jpn. J. Appl. Phys. , 10.7567/JJAP.52.11NA08, 52, 11NA08, 2013.11.
139. K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki, Epitaxial Growth of ZnInON Films with Tunable Band Gap from 1.7 eV to 3.3 eV on ZnO Templates, Jpn. J. Appl. Phys., 10.7567/JJAP.52.11NM06, 52, 11NM06, 2013.11.
140. I. Suhariadi, K. Oshikawa, K. Kuwahara, K. Matsushima, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, N. Itagaki, Effects of Nitrogen on Crystal Growth of Sputter-Deposited ZnO Films for Transparent Conducting Oxide, Jpn. J. Appl. Phys. , 10.7567/JJAP.52.11NB03, 52, 11NB03, 2013.11.
141. Y. Kim, K. Hatozaki, Y. Hashimoto, G. Uchida, K. Kamataki, N. Itagaki, H. Seo, K. Koga, and M. Shiratani, Correlation between Volume Fraction of Silicon Clusters in Amorphous Silicon Films and Optical Emission Properties of Si and SiH, Jpn. J. Appl. Phys. , 10.7567/JJAP.52.11NA07, 52, 11NA07, 2013.11.
142. G. Uchida, Y. Wang, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Characteristics of Crystalline Silicon/Si Quantum Dot/Poly(3,4-ethylenedioxythiophene) Hybrid Solar Cells, Jpn. J. Appl. Phys. , 10.7567/JJAP.52.11NA05, 52, 11NA05, 2013.11.
143. H. Seo, M. Son, H. Kim, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Study on the Fabrication of Paint-Type Si Quantum Dot-Sensitized Solar Cells, Jpn. J. Appl. Phys., 10.7567/JJAP.52.10MB07, 57, 10MB07(5pages) , 2013.10.
144. O. Kaneko, H. Yamada, S. Inagaki, M. Jakubowski, S. Kajita, S. Kitajima, Kobayashi, K. Koga, T. Morisaki, S. Morita, T. Mutoh, S. Sakakibara, Y. Suzuki, H. Takahashi, K. Tanaka, K. Toi, Y. Yoshimura, T. Akiyama, Y. Asahi, N. Ashikawa, H. Chikaraishi, A. Cooper, D.S. Darrow, E. Drapiko, P. Drewelow, X. Du, A. Ejiri, M. Emoto, T. Evans N. Ezumi, K. Fujii, T. Fukuda, H. Funaba, M. Furukawa, D.A. Gates, M. Goto, T. Goto, W. Guttenfelder, S. Hamaguchi, M. Hasuo, T. Hino, Y. Hirooka, K. Ichiguchi, K. Ida, H. Idei, T. Ido, H. Igami, K. Ikeda, S. Imagawa, T. Imai, M. Isobe, M. Itagaki, T. Ito, K. Itoh, S. Itoh, A. Iwamoto, K. Kamiya, T. Kariya, H. Kasahara, N. Kasuya, D. Kato, T. Kato, K. Kawahata, F. Koike, S. Kubo, R. Kumazawa, D. Kuwahara, S. Lazerson, H. Lee, S. Masuzaki, S. Matsuoka, H. Matsuura, A. Matsuyama, C. Michael, D. Mikkelsen, O. Mitarai, T. Mito, J. Miyazawa, G. Motojima, K. Mukai, A. Murakami, I. Murakami, S. Murakami, T. Muroga, S. Muto, K. Nagaoka, K. Nagasaki, Y. Nagayama, N. Nakajima, H. Nakamura, Y. Nakamura, H. Nakanishi, H. Nakano, T. Nakano, K. Narihara, Y. Narushima, K. Nishimura, S. Nishimura, M. Nishiura, Y.M. Nunami, T. Obana, K. Ogawa, S. Ohdachi, N. Ohno, N. Ohyabu, T. Oishi, M. Okamoto, A. Okamoto, M. Osakabe, Y. Oya1, T. Ozaki, N. Pablant, B.J. Peterson, A. Sagara, K. Saito, R. Sakamoto, H. Sakaue, M. Sasao2, K. Sato, M. Sato, K. Sawada, R. Seki, T. Seki, V. Sergeev, S. Sharapov, I. Sharov, A. Shimizu, T. Shimozuma, M. Shiratani, M. Shoji, S. Sudo, H. Sugama, C. Suzuki, K. Takahata, Y. Takeiri, Y. Takemura, M. Takeuchi9, H. Tamura, N. Tamura, H. Tanaka, T. Tanaka, M. Tingfeng, Y. Todo, M. Tokitani, K. Tokunaga, T. Tokuzawa, H. Tsuchiya, K. Tsumori, Y. Ueda, L. Vyacheslavov, K.Y. Watanabe, T. Watanabe, T.H. Watanabe, B. Wieland, I. Yamada, S. Yamada, S. Yamamoto, N. Yanagi, R. Yasuhara, M. Yokoyama, N. Yoshida, S. Yoshimura, T. Yoshinaga, M. Yoshinuma and A. Komori, Extension of operation regimes and investigation of three-dimensional currentless plasmas in the Large Helical Device, Nuclear Fusion, 10.1088/0029-5515/53/10/104015, 53, 10, 104015, 2013.10.
145. G. Uchida, M. Sato, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Characteristics of photocurrent generation in the near-ultraviolet region in Si quantum-dot sensitized solar cells, Thin Solid Films, 10.1016/j.tsf.2013.04.111, 544, 93-98, 2013.10.
146. T. Urakawa, H. Matsuzaki, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori, Mass density control of carbon films deposited by H-assisted plasma CVD method, Surf. Coat. Technol., 10.1016/j.surfcoat.2012.10.002, 228, 1, S15–S18, 2013.08.
147. Y. Kim, T. Matsunaga, K. Nakahara, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Effects of nanoparticle incorporation on properties of microcrystalline films deposited using multi-hollow discharge plasma CVD, Surf. Coat. Technol., 10.1016/j.surfcoat.2012.04.029, 228, 1, S550–S553, 2013.08.
148. Y. Morita, S. Iwashita, D. Yamashita, G. Uchida, K. Kamataki, H. Seo, N. Itagaki, K. Koga, and M. Shiratani, Observation of nanoparticle growth process using a high speed camera, ISPC 21 Proceedings, 2013.07.
149. K. Koga, K. Nishiyama, Y. Morita, G. Uchida, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, and the LHD Experimental Group, Effects of DC Substrate Bias Voltage on Dust Flux in the Large Helical Device, J. Nucl. Mater. , 10.1016/j.jnucmat.2013.01.154, 438, S727–S730, 2013.07.
150. K. Nishiyama, Y. Morita, G. Uchida, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, K. Koga, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, the LHD Experimental Group, S. Bornholdt, and H. Kersten, Discharge power dependence of carbon dust flux in a divertor simulator, J. Nucl. Mater. , 10.1016/j.jnucmat.2013.01.169, 438, S788–S791, 2013.07.
151. Shinya Iwashita, Edmund Schüngel, Julian Schulze, Peter Hartmann, Zoltán Donkó, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani, Uwe Czarnetzki, Transport control of dust particles via the electrical asymmetry effect
Experiment, simulation and modelling, Journal of Physics D: Applied Physics, 10.1088/0022-3727/46/24/245202, 46, 24, 2013.06, The control of the spatial distribution of micrometre-sized dust particles in capacitively coupled radio frequency discharges is relevant for research and applications. Typically, dust particles in plasmas form a layer located at the sheath edge adjacent to the bottom electrode. Here, a method of manipulating this distribution by the application of a specific excitation waveform, i.e. two consecutive harmonics, is discussed. Tuning the phase angle θ between the two harmonics allows one to adjust the discharge symmetry via the electrical asymmetry effect (EAE). An adiabatic (continuous) phase shift leaves the dust particles at an equilibrium position close to the lower sheath edge. Their levitation can be correlated with the electric field profile. By applying an abrupt phase shift the dust particles are transported between both sheaths through the plasma bulk and partially reside at an equilibrium position close to the upper sheath edge. Hence, the potential profile in the bulk region is probed by the dust particles providing indirect information on plasma properties. The respective motion is understood by an analytical model, showing both the limitations and possible ways of optimizing this sheath-to-sheath transport. A classification of the transport depending on the change in the dc self-bias is provided, and the pressure dependence is discussed..
152. H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Growth control of ZnO nano-rod with various seeds and photovoltaic application, J. Phys. : Conference Series (11th APCPST), 10.1088/1742-6596/441/1/012029, 441, 1, 012029, 2013.06.
153. H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Analysis on the effect of polysulfide electrolyte composition for higher performance of Si quantum dot-sensitized solar cells, Electrochimica Acta, 10.1016/j.electacta.2013.02.026, 95, 1, 43-47, 2013.04.
154. N. Itagaki, K. Oshikawa, K. Matsushima, I. Suhariadi, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, Crystallinity control of sputtered ZnO films by utilizing buffer layers fabricated via nitrogen mediated crystallization: Effects of nitrogen flow rate, Proc. 13th International Conference on Plasma Surface Engineering, 2, 26, 84-87, 2013.03.
155. M. Shiratani, G. Uchida, K. Kamataki, H. Seo, N. Itagaki, K. Koga, Control of nanoparticle formation in reactive plasmas and its application to fabrication of green energy devices, Proc. 13th International Conference on Plasma Surface Engineering, 2, 26, 100-103, 2013.03.
156. K. Koga, T. Urakawa, G. Uchida, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, Control of Deposition Profile and Properties of Plasma CVD Carbon Films, Proc. 13th International Conference on Plasma Surface Engineering, 2, 26, 136-139, 2013.03.
157. H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, The reduction of charge recombination and performance enhancement by the surface modification of Si quantum dot-sensitized solar cell, Electrochimica Acta, 10.1016/j.electacta.2012.09.087, 87, 1, 213-217, 2013.01.
158. H. Seo, Y. Wang, M. Sato, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Improvement of Si Adhesion and Reduction of Electron Recombination for Si Quantum Dot-Sensitized Solar Cells, Jpn. J. Appl. Phys. , 10.7567/JJAP.52.01AD05, 52, 1, 01AD05(5pages), 2013.01.
159. Y. Kim, K. Hatozaki, Y. Hashimoto, G. Uchida, K. Kamataki, N. Itagaki, H. Seo, K. Koga, M. Shiratani, High Amount Cluster Incorporation in Initial Si Film Deposition by SiH4 Plasma Chemical Vapor Deposition, Jpn. J. Appl. Phys. , 10.7567/JJAP.52.01AD01, 52, 1, 01AD01(4pages), 2013.01.
160. T. Urakawa, R. Torigoe, H. Matsuzaki, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, Y. Setsuhara, K. Takeda, M. Sekine, M. Hori, H-2/N-2 plasma etching rate of carbon films deposited by H-assisted plasma CVD, Jpn. J. Appl. Phys. , 10.7567/JJAP.52.01AB01, 52, 1, 01AB01(4pages), 2013.01.
161. I. Suhariadi, K. Matsushima, K. Kuwahara, K. Oshikawa, D. Yamashita, H. Seo, G. Uchida, K. Kamtaki, K. Koga, M. Shiratani, S. Bornholdt, H. Kersten, Harm Wulff, N. Itagaki, Effects of Hydrogen Dilution on ZnO Thin Films Fabricated via Nitrogen Mediated Crystallization, Jpn. J. Appl. Phys. , 10.7567/JJAP.52.01AC08, 52, 1, 01AC08(5pages), 2013.01.
162. S. Iwashita, K. Nishiyama, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Dust particle formation due to interaction between graphite and helicon deuterium plasmas, Fusion Engineering and Design, 10.1016/j.fusengdes.2012.10.002, 88, 1, 28-32, 2013.01.
163. Akiyo Tanaka, Miyuki Hirata, Kazunori Koga, Makiko Nakano, Kazuyuki Omae, Yutaka Kiyohara, Pulmonary toxicity of indium tin oxide and copper indium gallium diselenide, 2012 MRS Spring Meeting Plasma Processing and Diagnostics for Life Sciences, 10.1557/opl.2012.1074, 125-136, 2012.12, The aim of this review is to introduce the adverse health effects of indium compounds. This review consists of 2 parts: (1) a study of the toxic effects of indium compounds in humans, and (2) a study of the toxic effects of indium tin oxide (ITO) and copper indium gallium diselenide (CIGS) in animals. To date, 4 epidemiological surveys have been conducted of indium-handling workers in Japan, and all who were studied showed that exposure to indium compounds caused pulmonary interstitial and emphysematous changes. There were clear dose-response and dose-effect relationships between the serum indium levels and the levels of Krebs von den Lungen-6 (KL-6), which is a serological indicator of interstitial pneumonia. Up until 2011, 8 cases of interstitial pneumonia in Japanese indium-exposed workers, 2 cases of pulmonary alveolar proteinosis (PAP) in US indium-exposed workers, and 1 case of PAP in a Chinese indium-exposed worker have been reported. In animal studies, it has been clearly demonstrated that ITO and CIGS particles cause pulmonary toxicity and that the dissolution of ITO and CIGS particles in the lungs is considerably slow when repeated intratracheal instillations were given to experimental animals. Thus, more studies are needed on the effects of human exposure to indium compounds..
164. N. Itagaki, K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, Sputter deposition of Epitaxial Zinc-Indium Oxynitride Films for Excitonic Transistors (Invited), Proc. International Symposium on Dry Process, 34, 97-98, 2012.11.
165. S. Kitazaki, K. Koga, M. Shiratani, N. Hayashi, Growth Control of Dry Yeast Using Scalable Atmospheric Pressure Dielectric Barrier Discharge Plasma Irradiation, Jpn. J. Appl. Phys. , 10.1143/JJAP.51.11PJ02, 51, 11, 11PJ02(5pages), 2012.11.
166. Y. Kim, T. Matsunaga, K. Nakahara ,G. Uchida, K. Kamataki , N. Itagaki, H. Seo, K. Koga, M. Shiratani , Effects of crystalline nanoparticle incorporation on growth, structure, and properties of microcrystalline silicon films deposited by plasma CVD , Thin Solid Films, 10.1016/j.tsf.2012.06.023, 523, 29-33, 2012.11.
167. K. Kamataki, K. Koga, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani, Control of radial density profile of nano-particle produced in reactive plasma by amplitude modulation of rf discharge voltage, Thin Solid Films, 10.1016/j.tsf.2012.07.059, 523, 76-79, 2012.11.
168. I. Suhariadi, N. Itagaki, K. Kuwahara, K. Oshikawa, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, K. Nakahara, M. Shiratani, ZnO:Al Thin Films with Buffer Layers Fabricated via Nitrogen Mediated Crystallization: Effects of N2/Ar Gas Flow Rate Ratio, Trans. Mater. Res. Soc. Jpn., 10.14723/tmrsj.37.165, 37, 2, 165-168, 2012.06.
169. A. Tanaka, M. Hirata, M. Shiratani, K. Koga, Y. Kiyohara, Subacute pulmonary toxicity of copper indium gallium diselenide following intratracheal instillations into the lungs of rats, Journal of Occupational Health, 10.1539/joh.11-0164-OA, 54, 3, 187-195, 2012.06.
170. K. Kuwahara, N. Itagaki, K. Nakahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani, High quality epitaxial ZnO films grown on solid-phase crystallized buffer layers, Thin Solid Films, 10.1016/j.tsf.2011.10.136, 520, 14, 4674-4677, 2012.05.
171. H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, The Optical Analysis and Application of Size-controllable Si Quantum Dots Fabricated by Multi-hollow Discharge Plasma Chemical Vapor Deposition, Mat. Res. Soc. Symp. Proc., 10.1557/opl.2012.890, 1426, 313-318, 2012.04.
172. S. Kitazaki, K. Koga, M. Shiratani, N. Hayashi, Rapid Growth of Radish Sprouts Using Low Pressure O2 Radio Frequency Plasma Irradiation, Mat. Res. Soc. Symp. Proc., 10.1557/opl.2012.966, 1469, ww02-08, 2012.04.
173. Y. Akiyoshi, N. Hayashi, S. Kitazaki, K. Koga and M. Shiratani, Influence of Atmospheric Pressure Torch Plasma Irradiation on Plant Growth, Mat. Res. Soc. Symp. Proc., 10.1557/opl.2012.970, 1469, ww06-10, 2012.04.
174. Y. Kim, K. Hatozaki, Y. Hashimoto, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, In-situ Measurements of Cluster Volume Fraction in Silicon Thin Films Using Quartz Crystal Microbalances, Mat. Res. Soc. Symp. Proc., 10.1557/opl.2012.839, 1426, 307-311, 2012.04.
175. K. Kamataki, Y. Morita, M. Shiratani, K. Koga, G. Uchida, N. Itagaki , In situ analysis of size dispersion of nano-particles in reactive plasma using two dimentional laser light scattering method, Journal of Instrumentation, 10.1088/1748-0221/7/04/C04017, 7, 4, C04017, 2012.04.
176. S. Kitazaki, K. Koga, M. Shiratani, N. Hayashi, Effects of Atmospheric Pressure Dielectric Barrier Discharge Plasma Irradiation on Yeast Growth, Mat. Res. Soc. Symp. Proc., 10.1557/opl.2012.969, 1469, ww06-08, 2012.04.
177. M. Shiratani, K. Hatozaki, Y. Hashimoto, Y. Kim, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, Characteristics of stable a-Si:H Schottoky cells fabricated by suppressing cluster deposition, Mat. Res. Soc. Symp. Proc., 10.1557/opl.2012.1245, 1426, 377-382, 2012.04.
178. S. Kitazaki, K. Koga, M. Shiratani, N. Hayashi, Growth Enhancement of Radish Sprouts Induced by Low Pressure O2 Radio Frequency Discharge Plasma Irradiation, Jpn. J. Appl. Phys. , 10.1143/JJAP.51.01AE01, 51, 1, 01AE01(4pages), 2012.01.
179. G. Uchida, K. Yamamoto, M. Sato, Y. Kawashima, K. Nakahara, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Effect of nitridation of Si nano-particles on the performance of quantum-dot sensitized solar cells, Jpn. J. Appl. Phys. , 10.1143/JJAP.51.01AD01, 51, 1, 01AD01(5pages), 2012.01.
180. K. Koga, K. Nakahara, Y. Kim, T. Matsunaga, D.Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, and M. Shiratani, Deposition of cluster-free B-doped a-Si:H films using SiH4+B10H14 multi-hollow discharge plasma CVD, Jpn. J. Appl. Phys. , 10.1143/JJAP.51.01AD03, 51, 1, 01AD03(4pages), 2012.01.
181. K. Koga, T. Matsunaga, Y. Kim, K. Nakahara, D. Yamashita, H. Matsuzaki, K. Kamataki, G. Uchida, N. Itagaki, and M. Shiratani, Combinatorial Deposition of Microcrystalline Silicon Films Using Multihollow Discharge Plasma Chemical Vapor Deposition, Jpn. J. Appl. Phys. , 10.1143/JJAP.51.01AD02, 51, 1, 01AD02(4pages), 2012.01.
182. K. Kuwahara, N. Itagaki, K. Nakahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani, Zno films with buffer layers crystallized via nitrogen mediation: Effects of deposition temperature of buffer layers, Proc. PVSEC-21, 4D-2P-11, 2011.11.
183. N. Itagaki, K. Kuwahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani, Zinc oxide-based transparent conducting films with buffer layers fabricated via nitrogen-mediated crystallization, Proc. PVSEC-21, 4D-2P-10, 2011.11.
184. K. Kamataki, K. Koga, G. Uchida, H. Seo, N. Itagaki, M. Shiratani, Study of interaction between plasma fluctuation and nucleation of nanoparticle in plasma CVD, Proc. Plasma Conf. 2011, 24P014-O, 2011.11.
185. K. Hatozaki, K. Nakahara, G. Uchida, K. Koga, M. Shiratani, Stable schottky solar cells using cluster-free a-si:h prepared by multi-hollow discharge plasma CVD, Proc. PVSEC-21, 3D-2P-18, 2011.11.
186. K. Koga, T. Urakawa, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori, Self-organized carbon Mk formation on the top surface of fine trenches using a low temperature plasma anisotropic CVD for depositing fine organic structure, Proc. Plasma Conf. 2011, 23G03, 2011.11.
187. Y. Kim, T. Matsunaga, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Radical Flux Evaluation to Microcrystalline Silicon Films Deposited by Multi-Hollow Discharge Plasma CVD, Proc. Plasma Conf. 2011, 24P011-O, 2011.11.
188. M. Sato, Y. Wang, K. Nakahara, T. Matsunaga, H. Seo, G. Uchida, K. Koga, M. Shiratani, Quantum dot-sensitized solar cells using nitridated si nanoparticles produced by double multi-hollow discharges, Proc. PVSEC-21, 3D-5P-12, 2011.11.
189. Y. Wang, M. Sato, T. Matsunaga, N. Itagaki, H. Seo, G. Uchida, K. Koga, M. Shiratani, Properties and performance of si quantum dot-sensitized solar cells with low temperature titania paste, Proc. PVSEC-21, 3D-5P-09, 2011.11.
190. T. Mieno, K. Koga, M. Shiratani, Production Process of Carbon Nanotube Coagulates, Proc. Plasma Conf. 2011, 24F08, 2011.11.
191. Y. Wang, M. Sato, H. Seo, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Performance enhancement of Si quantum dot-sensitized solar cells by surface modification using ZnO barrier layer, Proc. Intern. Symp. on Dry Process, 33, 133-134, 2011.11.
192. T. Urakawa, H. Matsuzaki, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori, Optical emission spectroscopy of Ar+H2+ C7H8 discharges for anisotropic plasma CVD of carbon, Proc. Intern. Symp. on Dry Process, 33, 123-124, 2011.11.
193. N. Itagaki, K. Kuwahara, K. Nakahara, D. Yamashita, K. Kamataki, H. Seo, G. Uchida, K. Koga, M. Shiratani, Low resistive ZnO:Al films with ZnO buffer layers fabricated by Ar/N2 magnetron sputtering, Proc. Plasma Conf. 2011, 24G16, 2011.11.
194. T. Matsunaga, Y. Kim, K. Koga, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani, Influence of nano-particles on multi-hollow discharge plasma for microcrystalline silicon thin films deposition, Proc. Plasma Conf. 2011, 24P015-O, 2011.11.
195. N. Hayashi, Y. Akiyoshi, S. Kitazaki, K. Koga, M. Shiratani, Influence of active oxygen species produced by atmospheric torch plasma on plant growth, Proc. Intern. Symp. on Dry Process, 33, 135-136, 2011.11.
196. S. Kitazaki, K. Koga, M. Shiratani, N. Hayashi, Growth promotion characteristics of bread yeast by atmospheric pressure dielectric barrier discharge plasma irradiation, Proc. Plasma Conf. 2011, 23P018-O, 2011.11.
197. T. Urakawa, H. Matsuzaki, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori, Effects of substrate bias voltage on plasma anisotropic CVD of carbon using H-assisted plasma CVD reactor, Proc. Plasma Conf. 2011, 24P007-O, 2011.11.
198. M. Shiratani, Y. Kim, T. Matsunaga, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, Effects of nanoparticle incorporation on Si thin films deposited by plasma CVD, Proc. Plasma Conf. 2011, 24G06, 2011.11.
199. T. Matsunaga, Y. Kim, K. Koga, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani, Effects of nano-particles on (220) crystal orientation of microcrystallite silicon thin films, Proc. PVSEC-21, 4D-2P-16, 2011.11.
200. Y. Wang, M. Sato, H. Seo, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Effects of electrolyte on performance of quantum dot-sensitized solar cells using Si nanoparticles synthesized by multi-hollow discharge plasma CVD, Proc. Plasma Conf. 2011, 23P013-O, 2011.11.
201. K. Kuwahara, N. Itagaki, K. Nakahara, D. Yamashita, Seo H., G. Uchida, K. Kamataki, K. Koga, M. Shiratani, Effects of N2 gas addition to sputtering plasma on properties of epitaxial ZnO films, Proc. Plasma Conf. 2011, 24P008-O, 2011.11.
202. K. Hatozaki, K. Nakahara, T. Matsunaga, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Deposition of highly stable cluster-free a-Si:H films using fast gas flow multi-hollow discharge plasma CVD method, Proc. Plasma Conf. 2011, 24P016-O, 2011.11.
203. K. Nakahara, K. Hatozaki, Y. Hashimoto, T. Matsunaga, M. Sato, D. Yamashita, H. Matsuzaki, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Deposition of cluster-free a-Si:H films using cluster eliminating filter, Proc. Plasma Conf. 2011, 24P010-O, 2011.11.
204. M. Sato, Y. Wang, K. Nakahara, T. Matsunaga, H. Seo, G. Uchida, K. Koga and M. Shiratani, Deposition of FeSi2 nano-particle film, Proc. Plasma Conf. 2011, 24P009-O, 2011.11.
205. K. Nakahara, K. Hatozaki, M. Sato, T. Matsunaga, D. Yamashita, H. Matsuzaki, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Defect density of cluster-free a-si:h films deposited by multi-hollow discharge plasma CVD, Proc. PVSEC-21, 3D-2P-20, 2011.11.
206. Y. Kim, T. Matsunaga, D. Yamashita, K. Kamataki, N. Itagaki, G. Uchida, K. Koga, M. Shiratani, Combinatorial study on effects of substatrate temperature of silicon film deposition using multi-hollow discharge plasma cvd, Proc. PVSEC-21, 3D-2P-09, 2011.11.
207. K. Nishiyama, Y. Morita, D. Yamashita, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, the LHD Experimental Group, S. Bornholdt, H. Kersten, Collection of carbon dust particles formed due to plasma-wall interactions between high density H2 plasma and carbon wall onto substrates by applying local DC bias voltage, Proc. Plasma Conf. 2011, 24P094-O, 2011.11.
208. G. Uchida, K. Yamamoto, Y. Kawashima, M. Sato, K. Nakahara, K. Kamataki, N. Itagaki, K. Koga, M. Kondo, M. Shiratani, Surface nitridation of silicon nano-particles using double multi-hollow discharge plasma CVD, Physica Status Solidi (c), 10.1002/pssc.201001230, 8, 10, 3017-3020, 2011.10.
209. K. Kamataki, H. Miyata, K. Koga, G. Uchida, N. Itagaki, M. Shiratani, Impacts of Amplitude Modulation of RF Discharge Voltage on the Growth of Nanoparticles in Reactive Plasma, Appl. Phys. Express, 10.1143/APEX.4.105001, 4, 10, 105001(3pages), 2011.10.
210. G. Uchida, Y. Kawashima, K. Yamamoto, M. Sato, K. Nakahara, T. Matsunaga, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Kondo, M. Shiratani, Hybrid sensitized solar cells using Si nanoparticles and ruthenium dye, Physica Status Solidi (c), 10.1002/pssc.201100166, 8, 10, 3021-3024, 2011.10.
211. K. Koga, K. Nakahara, Y. Kim, Y. Kawashima, T. Matsunaga, M. Sato, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, and M. Shiratani, Deposition of cluster-free P-doped a-Si:H films using SiH4+PH3 multi-hollow discharge plasma CVD method, Physica Status Solidi (c), 10.1002/pssc.201100229, 8, 10, 3013-3016, 2011.10.
212. K. Kamataki, H. Miyata, K. Koga, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani, Impacts of Plasma Fluctuations on Growth of Nano-Particles in Reactive Plasma , Proc. of International Conference on Phenomena in Ionized Gases(ICPIG) 2011 Conference, D13-318, 2011.09.
213. N. Hayashi, A. Nakahigashi, M. Goto, S. Kitazaki, K. Koga, M. Shiratani, Redox Characteristics of Thiol Compounds Using Radicals Produced by Water Vapor Radio Frequency Discharge, Jpn. J. Appl. Phys., 10.1143/JJAP.50.08JF04, 50, 8, 08JF04, 2011.08.
214. K. Koga, Y. Kawashima, T. Matsunaga, M. Sato, K. Nakahara, W. M. Nakamura, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani, Comparison between silicon thin films with and without incorporating crystalline silicon nanoparticles into the film, Thin Solid Films, 10.1016/j.tsf.2011.01.408, 519, 20, 6896-6898, 2011.08.
215. T. Urakawa, T. Nomura, H. Matsuzaki, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori, Deposition profile control of carbon films on submicron wide trench substrate using H-assisted plasma CVD, Proc. of The 20th International Symposium on Plasma Chemistry (ISPC20), POL02, 2011.07.
216. Y. Kim, T. Matsunaga, Y. Kawashima, D. Yamashita, K. Kamataki, N. Itagaki, G. Uchida, K. Koga, M. Shiratani, Combinatorial study of substrate temperature dependence on properties of silicon films deposited using multihollow discharge plasma CVD, Proc. of The 20th International Symposium on Plasma Chemistry (ISPC20), POL08, 2011.07.
217. M. Shiratani, K. Koga, S. Iwashita, G. Uchida, N. Itagaki, K. Kamataki, Nano-factories in plasma: present status and outlook, J. Phys. D: Appl. Phys., 10.1088/0022-3727/44/17/174038 , 44, 17, 174038, 2011.05.
218. Masaharu Shiratani, Kazunori Koga, Shinya Iwashita, Giichiro Uchida, Naho Itagaki, Kunihiro Kamataki, Nano-factories in plasma
Present status and outlook, Journal Physics D: Applied Physics, 10.1088/0022-3727/44/17/174038, 44, 17, 2011.05, We propose the concept of 'nano-factory in plasma' which is a miniature version of a macroscopic conventional factory. A nano-factory in plasma produces nanoblocks and radicals (adhesives) in reactive plasmas, transports nanoblocks towards a substrate and arranges them on the substrate. We describe several key control methods for a nano-factory in plasma: size and structure control of nanoparticles, control of their agglomeration, transport and sticking, and then explain the combination of several types of control. Finally we point out remaining important issues in nano-factories in plasma..
219. K. Koga, G. Uchida, K. Yamamoto, Y. Kawashima, M. Sato, K. Kamataki, N. Itagaki, M. Shiratani, Generation and Surface Modification of Si nano-particles using SiH4/H2 and N2 multi-hollow discharges and their application to the third generation photovoltaics, International Conference on Advances in Condensed and Nano Materials (ICACNM), 10.1063/1.3653600, 1393, 27-30, 2011.02.
220. N. Itagaki, K. Kuwahara, K. Nakahara, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, Highly Conducting and Very Thin ZnO:Al Films with ZnO Buffer Layer Fabricated by Solid Phase Crystallization from Amorphous Phase, Appl. Phys. Express, 10.1143/APEX.4.011101, 4, 1, 011101-011101-3 , 2011.01.
221. W. M. Nakamura, H. Matsuzaki, H. Sato, Y. Kawashima, K. Koga, M. Shiratani, High rate deposition of highly stable a-Si:H films using multi-hollow discharges for thin films solar cells, Surf. Coat. Technol., 10.1016/j.surfcoat.2010.07.081, 205, 1, S241-S245 , 2010.12.
222. Kazunori Koga, Hiroshi Sato, Yuuki Kawashima, William M. Nakamura, Masaharu Shiratani, High rate deposition of cluster-suppressed amorphous silicon films deposited using a multi-hollow discharge plasma CVD, 2009 MRS Fall Meeting Photovoltaic Materials and Manufacturing Issues II, 217-222, 2010.12, We have examined effects of gas velocity and gas pressure on a deposition rate of hydrogenated amorphous silicon (a-Si:H) films and on a volume fraction of clusters in the films using a multi-hollow discharge plasma CVD method. The maximum deposition rate realized for each pressure exponentially increases with decreasing the pressure from 1.0 Torr to 0.1 Torr, whereas the volume fraction of clusters very slightly increases with increasing the deposition rate. Based on the results, we have succeeded in depositing highly stable a-Si:H films of 4.9 × 1015cm-3 in a stabilized defect density at a rate of 3.0nm/s using the method..
223. T. Nomura, T. Urakawa, Y. Korenaga, D. Yamashita, H. Matsuzaki, K. Koga, M. Shiratani, Substrate temperature dependence of feature profile of carbon films on substrate with submicron trenches, Proc. IEEE TENCON 2010, 10.1109/TENCON.2010.5686688, 2213-2215, 2010.11.
224. H. Miyata, K. Nishiyama, S. Iwashita, H. Matsuzaki, D. Yamashita, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Substrate Temperature Dependence of Sticking Probability of SiOx-CH3 Nano-Particles, Proc. of International Symposium on Dry Process, P1-A17, 2010.11.
225. Y. Akiyoshi, A. Nakahigashi, N. Hayashi, S. Kitazaki, Takuro Iwao, K. Koga, M. Shiratani, Redox Characteristics of Amino Acids Using Low Pressure Water Vapor RF Plasma, Proc. IEEE TENCON 2010, 10.1109/TENCON.2010.5686467, 1957-1959, 2010.11.
226. Y. Kawashima, K. Yamamoto, M. Sato, T. Matsunaga, K. Nakahara, D. Yamashita, H. Matsuzaki, G. Uchida, K. Koga, M. Shiratani, Photoluminescence of Si nanoparticles synthesized using multi-hollow discharge plasma CVD, Proc. IEEE TENCON 2010, 10.1109/TENCON.2010.5686677, 2222-2224, 2010.11.
227. G. Uchida, M. Sato, Y. Kawashima, K. Yamamoto, K. Nakahara, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, M. Kondo, Optical and Electrical Properties of Particle Composite Thin Films deposited in SiH4/H2 and N2 Multi-Hollow Discharges , Proc. of MNC2010, 12D-11-66 , 2010.11.
228. S. Kitazaki, D. Yamashita, H. Matsuzaki, G. Uchida, K. Koga, M. Shiratani, Growth Stimulation of Radish Sprouts Using Discharge Plasma, Proc. IEEE TENCON 2010, 10.1109/TENCON.2010.5686474, 1960-1963, 2010.11.
229. M. Shiratani, K. Koga, G. Uchida, N. Itagaki, K. Kamataki, Fluctuation Control for Plasma Nanotechnologies, Proc. IEEE TENCON 2010, 10.1109/TENCON.2010.5685920, XII-XVI , 2010.11, プラズマナノテクノロジーで最重要課題となっている揺らぎの制御に関する現状と将来を展望した論文。.
230. G. Uchida, S. Nunomutra, H. Miyata, S. Iwashita, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Effects of Ar addition on breakdown voltage in a Si(CH3)2(OCH3)2 RF discharge, Proc. IEEE TENCON 2010, 10.1109/TENCON.2010.5686704, 2199-2201, 2010.11.
231. K. Kamataki, H. Miyata, K. Koga, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani, Effects of Amplitude Modulation of rf Discharge Voltage on Growth of Nano-Particles in Reactive Plasma, Proc. IEEE TENCON 2010, 10.1109/TENCON.2010.5686456, 1943-1947, 2010.11.
232. Takeaki Matsunaga, Yuki Kawashima, Kazunori Koga, Kenta Nakahara, William Makoto Nakamura, Giichiro Uchida, Naho Itagaki, Daisuke Yamashita, Hidefumi Matsuzaki, Masaharu Shiratani, Deposition profiles of microcrystalline silicon films using multi-hollow discharge plasma CVD, 2010 IEEE Region 10 Conference, TENCON 2010 TENCON 2010 - 2010 IEEE Region 10 Conference, 10.1109/TENCON.2010.5686679, 2219-2221, 2010.11, We have studied deposition profiles of micro crystalline silicon (μc-Si) films using a multi-hollow discharge plasma CVD method, by which contribution of SiH3 and H to deposition varies with the distance between the substrate and discharge region. Under high pressure (6 Torr) depletion condition, crystalline films were deposited in a region near the discharges and the higher crystallinity was obtained at the closer to the discharges. Films of 0.6 in crystallinity ΦC were deposited in a very narrow region between 4 and 5 mm from the discharges. The process window of good quality μc-Si films is very narrow. These results indicate the multi-hollow discharge plasma CVD method allows us to optimize deposition conditions easier than the conventional deposition methods..
233. K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, K. Yamamoto, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Cluster-Free B-Doped a-Si:H Films Deposited Using SiH4 + B10H14 Multi-Hollow Discharges, Proc. IEEE TENCON 2010, 10.1109/TENCON.2010.5686686, 2216-2218, 2010.11.
234. A. Nakahigashi, Y. Akiyoshi, N. Hayashi, S. Kitazaki, K. Koga, M. Shiratani, Redox Characteristics of Thiol of Plants Using Radicals Produced by RF Discharge, Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma, 55, 7, KWP.00008, 2010.10.
235. T. Nomura, T. Urakawa, Y. Korenaga, D. Yamashita, H. Matsuzaki, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori, Plasma parameter measurements of Ar+H2+C7H8 plasma in H-assisted plasma CVD reactor, Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma, 55, 7, DTP.00173, 2010.10.
236. Shinya Iwashita, Hiroshi Miyata, Kazunori Koga, Masaharu Shiratani, Nanoblock Assembly Using Pulse RF Discharges with Amplitude Modulation, Industrial Plasma Technology Applications from Environmental to Energy Technologies, 10.1002/9783527629749.ch31, 377-383, 2010.10.
237. G. Uchida, M. Sato, Y. Kawashima, K. Nakahara, K. Yamamoto, T. Matsunaga, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Generation of nitridated silicon particles and their thin film deposition using double multi-hollow discharges, Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma, 55, 7, CTP.00093, 2010.10.
238. K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, K. Yamamoto, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Deposition rate enhancement of cluster-free P-doped a-Si:H films using multi-hollow discharge plasma CVD method, Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma, 55, 7, CTP.00087, 2010.10.
239. Kazunori Koga, Masaharu Shiratani, Yukio Watanabe, Deposition of a-Si
H Films with High Stability against Light Exposure by Reducing Deposition of Nanoparticles Formed in SiH4 Discharges, Industrial Plasma Technology Applications from Environmental to Energy Technologies, 10.1002/9783527629749.ch20, 247-257, 2010.10.
240. T. Matsunaga, Y. Kawashima, K. Koga, W. M. Nakamura, K. Nakahara, H. Matsuzaki, D. Yamashita, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani, Combinatorial deposition of microcrystalline Si films using multi-hollow discharge plasma CVD, Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma, 55, 7, CTP.00089, 2010.10.
241. H. Miyata, K. Nishiyama, S. Iwashita, H. Matsuzaki, D. Yamashita, G. Uchida, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, LHD experimental group , Carbon dust particles generated due to H2 plasma-carbon wall interaction, Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma, 55, 7, CTP.00114, 2010.10.
242. Y. Kawashima, K. Nakahara, H. Sato, K. Koga, M. Shiratani, M. Kondo, Quantum dot-sensitized solar cells using Si nanoparticles, Trans. Mater. Res. Soc. Jpn., 35, 3, 597-599, 2010.09.
243. Takuya Nomura, Kazunori Koga, Masaharu Shiratani, Yuichi Setsuhara, Makoto Sekine, Masaru Hori, Deposition profile control of carbon films on patterned substrates using a hydrogen-assisted plasma CVD method, 2009 MRS Fall Meeting Microelectromechanical Systems - Materials and Devices III, 203-207, 2010.08, We have studied effects of H atom source on deposition profiles of carbon films, deposited by H assisted anisotropic plasma CVD method. Deposition rate normalized by that for the aspect ratio of 1 at sidewall and bottom decreases with increasing discharge power of H atom source from 0 W to 500 W, because the incident H atom flux per surface area in a trench increases and H atoms etch carbon films..
244. Y. Kawashima, K. Yamamoto, M. Sato, K. Nakahara, T. Matsunaga, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, M. Kondo, Si quantum dot-sensitized solar cells using Si nanoparticles produced by plasma CVD, Proc. 35th IEEE Photovoltaic Specialists Conf., 10.1109/PVSC.2010.5617205, 3347-3351, 2010.07.
245. K. Koga, Y. Kawashima, K. Nakahara, T. Matsunaga, W. M. Nakamura, M. Shiratani, Effects of hydrogen dilution on electron density in multi-hollow discharges with magnetic field for A-Si:H film deposition, Proc. 35th IEEE Photovoltaic Specialists Conf., 10.1109/PVSC.2010.5616502, 3718-3721, 2010.07.
246. K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, K. Yamamoto, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Deposition of cluster-free P-doped a-Si:H films using a multi-hollow discharge plasma CVD method, Proc. 35th IEEE Photovoltaic Specialists Conf., 10.1109/PVSC.2010.5616514, 3722-3755, 2010.07.
247. A. Tanaka, M. Hirata, Y. Kiyohara, M. Nakano, K. Omae, M. Shiratani, K. Koga, Review of pulmonary toxicity of indium compounds to animals and humans, Thin Solid Films, 10.1016/j.tsf.2009.10.123, 518, 11, 2934-2936, 2010.03.
248. Y. Kawashima, K. Nakahara, H. Sato, K. Koga, M. Shiratani, M. Kondo, Synthesis of crystalline Si nanoparticles for Quantum dots-sensitized solar cells using multi-hollow discharge plasma CVD, Proc. of the 27th symposium on plasma processing, B5-05, 101-102, 2010.02.
249. S. Iwashita, H. Miyata, YasuY. Yamada, H. Matsuzaki, K. Koga, M. Shiratani, Observation of nano-particle transport in capacitively coupled radio frequency discharge plasma, Proc. of the 27th symposium on plasma processing, P1-13, 153-154, 2010.02.
250. H. Sato, Y. Kawashima, K. Nakahara, K. Koga, M. Shiratani, Measurement of electron density in multi-hollow discharges with magnetic field, Proc. of the 27th symposium on plasma processing, A6-01, 105-106, 2010.02.
251. T. Mieno, GuoDong Tan, S. Usuba, K. Koga, M. Shiratani, In-situ Measurement of Production Process of Nanotube-Aggregates by the Laser-Mie Scattering (Dependence of Arc Condition and Gravity), Proc. of the 27th symposium on plasma processing, P2-17, 257-258, 2010.02.
252. H. Miyata, S. Iwashita, YasuY. Yamada, K. Koga, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, LHD Experimental Group, In-Situ Sampling of Dust Particles Produced Due to Interaction between Main Discharge Plasma and Inner Wall in LHD, Proc. of the 27th symposium on plasma processing, P1-14, 155-156, 2010.02.
253. K. Koga, H. Sato, Y. Kawashima, W. M. Nakamura, M. Shiratani, Effects of gas residence time and H2 dilution on electron density in multi-hollow discharges of SiH4+ H2, Proc. of the 27th symposium on plasma processing, A5-06, 91-92, 2010.02.
254. T. Nomura, Y. Korenaga, H. Matsuzaki, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori, Control of deposition profile of hard carbon films on trenched substrates using H-assisted plasma CVD reactor, Proc. of the 27th symposium on plasma processing, P1-39, 205-206, 2010.02.
255. T. Nomura, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori, Deposition Profile Control of Carbon Films on Patterned Substrates using a Hydrogen-assited Plasma CVD Method, Mat. Res. Soc. Symp. Proc., 10.1557/PROC-1222-DD05-16, 1222, DD05-16, 203-207 , 2010.01.
256. Shojiro Komatsu, Yuhei Sato, Daisuke Hirano, Takuya Nakamura, Kazunori Koga, Atsushi Yamamoto, Takahiro Nagata, Toyohiro Chikyo, Takayuki Watanabe, Takeo Takizawa, Katsumitsu Nakamura, Takuya Hashimoto, Masaharu Shiratani, P-type sp
3
-bonded BN/n-type Si heterodiode solar cell fabricated by laser-plasma synchronous CVD method, Journal of Physics D: Applied Physics, 10.1088/0022-3727/42/22/225107, 42, 22, 2009.11, A heterojunction of p-type sp
3
-bonded boron nitride (BN) and n-type Si fabricated by laser-plasma synchronous chemical vapour deposition (CVD) showed excellent rectifying properties and proved to work as a solar cell with photovoltaic conversion efficiency of 1.76%. The BN film was deposited on an n-type Si (1 0 0) substrate by plasma CVD from B
2
H
6
+ NH
3
+ Ar while doping of Si into the BN film was induced by the simultaneous irradiation of an intense excimer laser with a pulse power of 490 mJ cm
-2
, at a wavelength of 193 nm and at a repetition rate of 20 Hz. The source of dopant Si was supposed to be the Si substrate ablated at the initial stage of the film growth. The laser enhanced the doping (and/or diffusion) of Si into BN as well as the growth of sp
3
-bonded BN simultaneously in this method. P-type conduction of BN films was determined by the hot (thermoelectric) probe method. The BN/Si heterodiode with an essentially transparent p-type BN as a front layer is supposed to efficiently absorb light reaching the active region so as to potentially result in high efficiency..
257. M. Shiratani, K. Koga, Toward plasma nano-factories, Proc. of 2nd International Conference on Advanced Plasma Technologies (iCAPT-II) with 1st International Plasma Nanoscience Symposium (iPlasmaNano-I), 86, 2009.09.
258. Y. Kawashima, H. Sato, K. Koga, M. Shiratani, M. Kondo, Synthesis of Si nanoparticles for multiple exciton generation solar cells using multi-hollow discharge plasma CVD, Proc. of 2009 International Symposium on Dry Process, 107, 2009.09.
259. J. Umetsu, K. Inoue, T. Nomura, H. Matsuzaki, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori, Substrate temperature dependence of deposition profile of plasma CVD carbon films in trenches, J. Plasma Fusion Res., 8, 1443-1446, 2009.09.
260. T. Nomura, Y. Korenaga, J. Umetsu, H. Matsuzaki, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori, Pressure, aspect ratio dependence of deposition profile of carbon films on trench substrates deposited by plasma CVD, Proc. of 2009 International Symposium on Dry Process, 101, 2009.09.
261. S. Iwashita, H. Miyata, K. Koga, H. Matsuzaki, M. Shiratani, M. Akiyama, Porosity Control of Nano-Particle Composite Porous Low Dielectric Films using Pulse RF Discharges with Amplitude Modulation, Proc. of 2009 International Symposium on Dry Process, 99, 2009.09.
262. W. M. Nakamura, Y. Kawashima, M. Tanaka, H. Sato, J. Umetsu, H. Miyahara, H. Matsuzaki, K. Koga, M. Shiratani, Optical Emission Spectroscopy of a Magnetically Enhanced Multi-hollow Discharge Plasma for a-Si:H Deposition, J. Plasma Fusion Res., 8, 736-739, 2009.09.
263. K. Nakahara, Y. Kawashima, H. Sato, K. Koga, M. Shiratani, Measurements of electron density in SiH4+H2 multi-hollow discharges using a frequency shift probe, Proc. of 2009 International Symposium on Dry Process, 163, 2009.09.
264. H. Sato, Y. Kawashima, K. Koga, M. Shiratani, Measurements of Surface Temperature of a-Si:H Films in Silane Multi-Hollow Discharge with IR Thermometer, Proc. of 2009 International Symposium on Dry Process, 113, 2009.09.
265. H. Miyata, S. Iwashita, YasuY. Yamada, K. Koga, M. Shiratani, Dust Particles formed owing to interactions between H2 or D2 helicon plasma, graphite, Proc. of 2009 International Symposium on Dry Process, 33, 2009.09.
266. H. Miyahara, S. Iwashita, H. Miyata, H. Matsuzaki, K. Koga, M. Shiratani, Detection of nano-particles formed in cvd plasma using a two-dimensional photon-counting laser-light-scattering method, J. Plasma Fusion Res., 8, 700-704, 2009.09.
267. H. Sato, Y. Kawashima, M. Tanaka, K. Koga, W. M. Nakamura, M. Shiratani , Dependence of volume fraction of clusters on deposition rate of a-Si:H films deposited using a multi-hollow discharge plasma CVD method, J. Plasma Fusion Res., 8, 1435-1438, 2009.09.
268. S. Iwashita, H. Miyata, H. Matsuzaki, K. Koga, M. Shiratani, Control of Three Dimensional Transport of Nano-blocks by Amplitude Modulated Pulse RF Discharges using an Electrode with Needles, J. Plasma Fusion Res., 8, 582-586, 2009.09.
269. S. Iwashita, H. Miyata, K. Koga, M. Shiratani, N. Ashikawa, K. Nishimura, A. Sagara, the LHD experimental group, A comparison of dust particles produced due to interaction between graphite and plasma: LHD vs helicon discharges, J. Plasma Fusion Res., 8, 308-311, 2009.09.
270. M. Shiratani, S. Iwashita, H. Miyata, K. Koga, H. Matsuzaki, M. Akiyama, Plasma CVD of Nano-particle Composite Porous SiOCH Films, Proc. of 19th International Symposium on Plasma Chemistry, 2009.07.
271. K. Koga, S. Iwashita, S. Kiridoshi, M. Shiratani, N. Ashikawa, K. Nishimura, A. Sagara, A. Komori, LHD Experimental Group, Characterization of Dust Particles Ranging in Size from 1 nm to 10 m Collected in LHD, Plasma and Fusion Research, 10.1585/pfr.4.034 , 4, 034-034, 2009.04.
272. S. Iwashita, H. Miyata, H. Matsuzaki, K. Koga, M. Shiratani, Nano-block manipulation using pulse RF discharges with amplitude modulation combined with a needle electrode, Proc. of PSS2009/SPP26, 2009.02.
273. K. Koga, W. M. Nakamura, H. Sato, M. Tanaka, H. Miyahara, M. Shiratani , High Rate Deposition of a-Si:H Depositied using a Low Gas Pressure Multi-hollow Discharge Plasma CVD Method, Proc. of PSS2009/SPP26, 2009.02.
274. J. Umetsu, K. Inoue, T. Nomura, H. Matsuzaki, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori, Deposition profile of toluene plasma CVD carbon films in trenches, Proc. of PSS2009/SPP26, 2009.02.
275. K. Koga, Y. Kawashima, W. M. Nakamura, H. Sato, M. Tanaka, M. Shiratani, M. Kondo, Conductivity of nc-Si films depsited using multi-hollow discharge plasma CVD method, Proc. of PSS2009/SPP26, 2009.02.
276. S. Iwashita, H. Miyata, K. Koga, M. Shiratani, N. Ashikawa, A. Sagara, K. Nisimura , Characteristics of dust particles produced due to interaction between hydrogen plasma, graphite
, Proc. of PSS2009/SPP26, 2009.02.
277. S. Iwashita, H. Miyata, K. Koga, H. Matsuzaki, M. Shiratani, M. Akiyama, Plasma CVD of Nano-particle Composite Porous Films of k=1.4-2.9, Young’s Modulus above 10 GPa, Proc. of 30th International Symposium on Dry Process, 115, 2008.12.
278. J. Umetsu, K. Inoue, T. Nomura, H. Matsuzaki, K. Koga, Y. Setsuhara, M. Shiratani, M. Sekine, M. Hori, Deposition profile of plasma CVD carbon films in trenches, Proc. of 30th International Symposium on Dry Process, 35, 2008.12.
279. W. M. Nakamura, H. Miyahara, K. Koga, M. Shiratani, Two dimensional spatial profile of volume fraction of nanoparticles incorporated into a-Si:H films deposited by plasma CVD, IEEE Trans. Plasma Science, 10.1109/TPS.2008.923830, 36, 4, 888-889, 2008.08.
280. S. Iwashita, Michihito Morita, H. Matsuzaki, K. Koga, and M. Shiratani, Temperature dependence of dielectric constant of nano-particle composite porous low-k films fabricated by pulse rf discharges with amplitude modulation, Jpn. J. Appl. Phys., 10.1143/JJAP.47.6875, 47, 8, 6875-6878, 2008.08.
281. S. Iwashita, K. Koga, M. Morita, M. Shiratani, Rapid transport of nano-particles in amplitude modulated rf discharges for depositing porous ultra-low-k films, J. Phys. : Conference Series, 10.1088/1742-6596/100/6/062006, 100, 6, p. 062006, 2008.08.
282. J. Umetsu, K. Koga, K. Inoue, M. Shiratani, Optical emission spectroscopic study on H-assisted plasma for anisotropic deposition of Cu films, J. Phys. : Conference Series, 10.1088/1742-6596/100/6/062007, 100, 6, p. 062007, 2008.08.
283. S. Nunomura, K. Koga, Y. Watanabe, M. Shiratani, M. Kondo, Nanoparticle coagulation in fractionally charged and charge fluctuating dusty plasma, Phys. Plasma, 10.1063/1.2972162, 15, 8, p. 080703, 2008.08.
284. J. Umetsu, K. Koga, K. Inoue, H. Matzuzaki, K. Takenaka, M. Shiratani, Discharge power dependence of Ha intensity asn electron density of Ar+H2 discharges in H-assisted plasma CVD reactor, Surf. Coat. Technol., 10.1016/j.surfcoat.2008.06.108, 202, 22-23, 5659-5662, 2008.08.
285. W. M. Nakamura, K. Koga, H. Miyahara, M. Shiratani, Cluster incorporation control for a-Si:H film deposition, J. Phys. : Conference Series, 10.1088/1742-6596/100/8/082018, 100, 8, p. 082018, 2008.08.
286. M. Shiratani, W. M. Nakamura, H. Miyahara, K. Koga, Nanoparticle-Suppressed Plasma CVD for Depositing Stable a-Si:H Films, Digest of Technical Papers of the Fifteenth International Workshop on Active-Matrix Flatpanel Displays, Devices (AM-FPD 08), 69, 2008.07.
287. Yukio Watanabe, Masaharu Shiratani, Kazunori Koga, Growth Control of Clusters in Reactive Plasmas and Application to High-Stability a-Si
H Film Deposition, Advanced Plasma Technology, 10.1002/9783527622184.ch12, 227-242, 2008.04.
288. Shinya Iwasita, Toshihisa Inoue, Kazunori Koga, Masaharu Shiratani, Shota Nunomura, Michio Kondo, Properties of nano-crystalline silicon films for top solar cells, 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, 10.1109/WCPEC.2006.279809, 1664-1667, 2007.12, Nano-crystalline Si films are deposited using multi-hollow plasma CVD. The films have a wide optical band gap of 1.75 eV and a large absorption coefficient similar to those of a-Si:H films. They also have a low initial defect density of 3×10
15
cm
3
and show high stability against light soaking. These results suggest that nano-crystalline Si films are promising materials for top cells..
289. K. Koga, W. M. Nakamura, and M. Shiratani, VHF discharge sustained in a small hole, Proc. 28th Intern. Conf. on Phenomena in Ionized Gases , 1987-1989, 2007.07.
290. Masaharu Shiratani, William Makoto Nakamura, Hiroommi Miyahara, Kazunori Koga, Control of nanostructure of plasma CVD films for third generation photovoltaics, Journal of Physics: Conference Series, 10.1088/1742-6596/86/1/012021, 86, 1, 2007.06, One of the requirements for successful application of hydrogenated amorphous silicon (a-Si:H) to promising tandem cells, that aim at high efficiency and low production cost, is to overcome its light induced degradation, which reduces significantly the initial conversion efficiency with light exposure. Our previous studies indicate a relation between light induced degradation and the incorporation of amorphous silicon nanoparticles (clusters) into a-Si:H films. Here we report control of nanostructure of a-Si:H films using a multi-hollow plasma CVD reactor. Deposition with low or non-incorporation of clusters is realized in the upstream region far from discharges in the reactor, whereas in the downstream region the volume fraction of clusters in films increases with the distance from discharge region. Films with a lower volume fraction tend to show better stability against light exposure..
291. K. Koga, S. Iwashita, M. Shiratani, Transport of nano-particles in capacitively coupled rf discharges without and with amplitude modulation of discharge voltage, J. Phys. D: Appl. Phys., 10.1088/0022-3727/40/8/S05, 40, 8, 2267-2271, 2007.04.
292. M. Shiratani, K. Koga, S. Ando, T. Inoue, Y. Watanabe, S. Nunomura, M. Kondo, Single step process to deposit Si quantum dot films using H2+SiH4 VHF discharges and electron mobility in a Si quantum dot solar cell, Surf. Coat. Technol., 10.1016/j.surfcoat.2006.07.012, 201, 9-11, 5468-5471, 2007.02.
293. S. Iwashita, K. Koga, M. Shiratani, A device for trapping nano-particles formed in processing plasma for reduction of nano-waste, Surf. Coat. Technol., 10.1016/j.surfcoat.2006.07.060, 201, 9-11, 5701-5704, 2007.02.
294. S. Iwashita, K. Koga, M. Shiratani, Transport of nano-particles in pulsed AM RF discharges, Proc. the 24th Symp. on Plasma Processing, 103-104, 2007.01.
295. K. Koga, W. M. Nakamura, D. Shimokawa, M. Shiratani, Stability of a-Si:H deposited using multi-hollow plasma CVD, Proc. the 24th Symp. on Plasma Processing, 189-190, 2007.01.
296. Masaharu Shiratani, Kazunori Koga, Shinya Iwashita, Syota Nunomura, Rapid transport of nano-particles having a fractional elementary charge on average in capacitively-coupled rf discharges by amplitude-modulating discharge voltage, Faraday Discussions, 10.1039/b704910b, 137, 127-138, 2007.01, We have observed transport of nano-particles having, on average, a fractional elementary charge in single pulse and double pulse capacitively-coupled rf discharges both without and with an Amplitude Modulation (AM) of the discharge voltage, using a two-dimensional laser-light scattering method. Rapid transport of nano-particles towards the grounded electrode is realized using rf discharges with AM. Two important parameters for the rapid transport of nano-particles are the discharge voltage and the period of AM. An important key of the rapid transport is fast redistribution of ion current over the whole discharge region; that is, fast change of spatial distribution of forces exerted on nano-particles. The longer period of the modulation is needed for rapid transport for the larger nano-particles. The higher discharge voltage of the modulation is needed for rapid transport of nano-particles having a smaller mean charge. Local perturbation of electric potential using a probe does not bring about global rapid transport of nano-particles, whereas it leads to their local transport near the probe..
297. Masaharu Shiratani, Shinya Iwashita, Kouki Bando, Toshihisa Inoue, Kazunori Koga, Incorporation of higher-order silane radicals into A-SI
H films of high stability against light exposure, 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, 10.1109/WCPEC.2006.279791, 2, 1596-1599, 2007.01, We have studied effects of higher-order silane (HOS) radicals on stability of a-Si:H films against light exposure by using a multi-hollow discharge plasma CVD method. For the method, a short gas residence time of ms in the discharge regions suppresses growth of a-Si:H nano-particles (hereafter referred to as clusters) and gas viscous force drives clusters toward the downstream region. Therefore, we can deposit a-Si:H films without incorporating clusters in the upstream region and such films show high stability. The method is effective in suppressing cluster amount in the discharges, while the method has little effects on Si2H5 and Si3H7 densities there..
298. M. Shiratani, S. Kiridoshi, K. Koga, S. Iwashita, N. Ashikawa, K. NIshimura, A. Sagara, A. Komori, LHD Experimental Group, In-situ sampling of dust generated in LHD and its analysis, Proc. the 24th Symp. on Plasma Processing, 371-372, 2007.01.
299. Shinya Iwashita, Hiroomi Miyahara, Kazunori Koga, Masaharu Shiratani, Shota Nunomura, Michio Kondo, Plasma CVD for producing Si quantum dot films, 22nd International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV Proceedings of the 22nd International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV, 10.1109/DEIV.2006.357362, 2, 558-560, 2006.09, Si quantum dot films are deposited using a multi-hollow discharge plasma CVD method. For the method, Si nano-crystallites of a small size dispersion and radicals are produced using H2+SiH4 VHF discharges, and then they are co-deposited on to a substrate to form Si quantum dot films, that is, a-Si:H films containing nano-crystallites. The films have a wide optical band gap of 1.8 eV and a large optical absorption coefficient similar to those of a-Si:H films. They also have a low initial defect density below 1×1016 cm-3 and show high stability against light soaking. These results suggest that the Si quantum dot films are promising materials for solar cells..
300. M. Shiratani, K. Koga, N. Kaguchi, K. Bando,and Y. Watanabe, Species responsible for Si-H2 bond formation in a-Si:H films deposited using silane high frequency discharges, Thin Solid Films, 10.1016/j.tsf.2005.08.015, 506-507, 17-21, 2006.05.
301. T. Kakeya, K. Koga, M. Shiratani, Y. Watanabe, and M. Kondo, Production of crystalline Si nano-clusters using pulsed H2+SiH4 VHF discharges, Thin Solid Films, 10.1016/j.tsf.2005.08.090, 506-507, 288-291, 2006.05.
302. K. Koga, Y. Kitaura, M. Shiratani, Y. Watanabe, and A. Komori, Nano-particle formation due to interaction between H2 plasma and carbon wall, Thin Solid Films, 10.1016/j.tsf.2005.08.062, 506-507, 656-659, 2006.05.
303. K. Takenaka, K. Koga, M. Shiratani, Y. Watanabe, and T. Shingen, Mechanism of Cu deposition from Cu(EDMDD)2 using H-assisted plasma CVD, Thin Solid Films, 10.1016/j.tsf.2005.08.028, 506-507, 197-201, 2006.05.
304. Shota Nunomura, Makoto Kita, Kazunori Koga, Masaharu Shiratani, Yukio Watanabe, In situ simple method for measuring size and density of nanoparticles in reactive plasmas, Journal of Applied Physics, 10.1063/1.2189951, 99, 8, 2006.05, A laser-light-scattering (LLS) method for measuring the size and density of nanoparticles generated in reactive plasmas has been developed. The size and density of the nanoparticles are determined from their thermal coagulation that takes place after turning off the discharge. The measurable size and density range of the LLS method is np 1013 (m-32) × dp -52 L-2 ng -1, where np, dp, L, and ng are the density, size, and diffusion length of the nanoparticles, and the density of a background gas, respectively. The method has been demonstrated by measurement of the size and density of nanoparticles formed by the radio-frequency discharge of dimethyldimethoxysilane Si (C H3) 2 (OC H3) 2 diluted with Ar. Using a simple optical setup for the LLS measurement, nanoparticles are detected down to ≈1 nm in size when they are generated at a density of ≈ 1012 cm-3. The developed method is widely applicable to other systems in which thermal coagulation takes place..
305. S. Nunomura, K. Koga, M. Shiratani, Y. Watanabe, Y. Morisada, N. Matsuki, and S. Ikeda, Fabrication of nanoparticle composite porous films having ultra-low dielectric constant, Jpn. J. Appl. Phys., 10.1143/JJAP.44.L1509, 44, 50, L1509-L1511, 2005.12.
306. Kazunori Koga, Naoto Kaguchi, Masaharu Shiratani, Yukio Watanabe, Evaluation of contribution of higher-order silane radicals in silane discharges to Si-Hbond formation in a-Si
H films, Novel Materials Processing by Advanced Electromagnetic Energy Sources, 10.1016/B978-008044504-5/50016-7, 79-82, 2005.12, This chapter discusses whether higher-order silane (HOS) radicals are the origin of Si-H2 bonds in amorphous silicon (A-Si:H) films, or not, based on the results of discharge power dependence of SiH4, Si2H6, and Si2H8 densities, which is understood using the simple reaction model. While the ratios of [SimH2m+2]/[SiH4] (m = 2 and 3), which are regarded as the contribution ratio of HOS radicals to the film growth, have constant values, the density of Si-H2 bonds in the films CSiH2 varies by more than one and a half orders of magnitude. The lack of correlation between the ratios and the CSiH2 value strongly suggests that the HOS radicals do not mainly contribute to formation of Si-H2 bonds in a-Si:H films..
307. Kosuke Takenaka, Manabu Takeshita, Kazunori Koga, Masaharu Shiratani, Yukio Watanabe, Effects of spruttering due to ion irradiation on plasma anisotropic CVD of Cu, Novel Materials Processing by Advanced Electromagnetic Energy Sources, 10.1016/B978-008044504-5/50015-5, 75-78, 2005.12, This chapter discusses the effects of sputtering due to ion irradiation on plasma anisotropic CVD of copper (Cu). The effects are studied using silicon (Si) substrates with trenches. Cu metallization contributed to scaling down of ultra large scale integration (ULSI), because Cu has a lower resistivity and better electro-migration resistance than aluminum. This chapter describes experimental results regarding deposition and sputtering rates at top, bottom surfaces, and sidewall of trenches. The chapter also discusses the effects of ion irradiation on plasma anisotropic CVD with the accent on roles of sputtering. Sputtering rates on the top and bottom surfaces decrease with increasing R from 0% to 66% and are nearly constant for R = 66-100%. The rate on the top surface is higher than that on the bottom surface. With decreasing the trench width, the deposition rate on the bottom surface increases, while the sputtering rate decreases..
308. K. Koga, T. Inoue, K. Bando, S. Iwashita, M. Shiratani, and Y. Watanabe, Highly stable a-Si:H films deposited by using multi-hollow plasma chemical vapor deposition, Jpn. J. Appl. Phys., 10.1143/JJAP.44.L1430, 44, 48, L1430-L1432, 2005.11.
309. K. Koga, N. Kaguchi, K. Bando, and M. Shiratani, Cluster-eliminating filter for depositing cluster-free a-Si:H films by plasma CVD, Rev. Sci. Instrum. , 10.1063/1.2126572, 76, 11, 113501(4pages), 2005.11.
310. Yukio Watanabe, Masaharu Shiratani, Kazunori Koga, Deposition of high-quality a-Si:H by suppressing growth of a-Si clusters in SiH4 plasmas, 4th International Conference on the Physics of Dusty Plasmas NEW VISTAS IN DUSTY PLASMAS Fourth International Conference on the Physics of Dusty Plasmas, 10.1063/1.2134578, 105-114, 2005.10, The density of Si-particles in a small size range below 10nm (referred to as clusters) in SiH4 capacitively-coupled high-frequency discharges amounts to 1011cm-3 even under deposition conditions of device-quality a-Si:H films. The results reported until now regarding the growth of such clusters are shown to be reasonably understood by taking into account the effects of gas flow on the growth. The SiH2 bond formation in the a-Si films are found to be mainly contributed by incorporation of large clusters (clusters in a range above about 0.5 nm in size) rather than higher-order-silane (HOS) radicals [SinHx (n<5, x<2n+2)] in the plasma. By employing the cluster-suppressed plasma CVD reactors, the remarkable decrease in SiH2 bond density in the films is realized, leading to the deposition of a-Si:H films of less light-induced degradation. Based on the knowledge of cluster growth obtained until now, the reactor with a potentiality of high rate deposition of high-quality films is proposed and its preliminary results are presented..
311. M. Shiratani, T. Kakeya, K. Koga, Y. Watanabe, and M. Kondo, Production of crystalline Si nano-particles using VHF discharges and their properties, Trans. Mater. Res. Soc. Jpn., 30, 1, 307-310, 2005.03.
312. Y. Watanabe, M. Shiratani, and K. Koga, Preparation of high-quality a-Si:H using cluster-suppressed plasma CVD method and its prospects, Trans. Mater. Res. Soc. Jpn., 30, 1, 267-272, 2005.03.
313. K. Takenaka, M. Shiratani, M. Takeshita, M. Kita, K. Koga, and Y. Watanabe, Control of deposition profile of Cu for LSI interconnects by plasma chemical vapor deposition, Pure Appl. Chem. , 10.1351/pac200577020391, 77, 2, 391-398, 2005.01.
314. K. Koga, N. Kaguchi, M. Shiratani, and Y. Watanabe, Correlation between volume fraction of clusters incorporated into a-Si:H films and hydrogen content associated with Si-H2 bonds in the films, J. Vac. Sci. Technol., A, 10.1116/1.1763905 , 22, 4, 1536-1539, 2004.07.
315. Kazunori Koga, Naoto Kaguchi, Masaharu Shiratani, Yukio Watanabe, Correlation between volume fraction of clusters incorporated into a-Si:H films and hydrogen content associated with Si-H2 bonds in the films, Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 10.1116/1.1763905, 22, 4, 1536-1539, 2004.07, The correlation between hydrogen content associated with the Si-H 2 bonds in a-Si:H films and volume fraction of clusters was studied. The study was carried out by using the downstream-cluster-collection (DCC) method and by combining the method with cluster suppressed Plasma CVD method. It was found that the DCC method provides information on size distribution density, shape and structure of clusters in the reactor. It was also observed that the incorporation of clusters above about 1 nm into a-Si:H films was an origin of Si-H2 bonds in the films..
316. K. Takenaka, M. Kita,, T. Kinoshita, K. Koga, M. Shiratani, and Y. Watanabe, Anisotropic Deposition of Cu in trenches by H-assisted Plasma Chemical Vapor Deposition, J. Vac. Sci. Technol., A, 10.1116/1.1738663, 22, 4, 1903-1907, 2004.07.
317. Kazunori Koga, Ryuji Uehara, Yasuhiro Kitaura, Masaharu Shiratani, Yukio Watanabe, Akio Komori, Carbon particle formation due to interaction between H2 plasma and carbon fiber composite wall, IEEE Transactions on Plasma Science, 10.1109/TPS.2004.828129, 32, 2 I, 405-409, 2004.04, Formation of carbon particles due to plasma surface interaction has been studied using an electron cyclotron resonance (ECR) plasma device. The interaction produces two sizes of groups: small spherical ones of 2-25 nm in size and large particles of irregular shape and above 100 nm in size. The latter are considered to be flakes peeled from carbon films deposited on the reactor wall. The total amount and average size of small particles tends to decrease with increasing the sheath voltage Vs between plasma and the carbon fiber composite (CFC) wall from 14 to 214 V. Optical emission intensities of CH and C as well as gas absorption rate to the CFC wall also decrease with increasing Vs. These results suggest that the carbon-containing species emitted from the CFC wall contribute to formation of small particles..
318. K. Koga, R. Uehara, Y. Kitaura, M. Shiratani, Y. Watanabe, A. Komori, Carbon particle formation due to interaction between H2 plasma and carbon fiber composite wall, IEEE Trans. Plasma Science, 10.1109/TPS.2004.828129 , 32, 2, 405-409, 2004.02.
319. Masaharu Shiratani, Kazunori Koga, Atsusi Harikai, Takanori Ogata, Yukio Watanabe, High-quality a-Si
H films deposited at 0.7 NM/S by cluster suppressed plasma CVD method, Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion, B, 1635-1638, 2003.12, High quality a-Si:H films have been deposited using the cluster-suppressed plasma CVD method. The stabilized FF value of a Schottky cell of 1 μm thick a-Si:H film deposited at 0.7 nm/s using the cluster-suppression method is as high as the initial value of a cell of 0.6 μm film deposited at 0.2 nm/s using the conventional method. This indicates the advantage of the cluster suppression method over the conventional one. The cell performance depends on the substrate temperature Ts and the highest power density is obtained at Ts = 300°C. The value of hydrogen content C H has little Ts dependence, while the Rα value decreases sharply from Rα =0.2 for Ts = 200°C to Rα= 0.034 for Ts =280°C. Moreover, a high compressive stress above 9×108Nm-2 is found to degrade the FF value..
320. Kosuke Takenaka, Masao Onishi, Manabu Takenshita, Toshio Kinoshita, Kazunori Koga, Masaharu Shiratani, Yukio Watanabe, Anisotropic plasma chemical vapor deposition of copper films in trenches, Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 Materials Research Society Symposium - Proceedings, 766, 465-470, 2003.12, An ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width..
321. Growth of Clusters in Silane Plasma and Their Relation to Deposition of Thin Films.
322. M. Shiratani, K. Koga, A. Harikai, T. Ogata, and Y. Watanabe, Effects of Excitation Frequency and H2 Dilution on Cluster Generation in Silane High-Frequency Discharges, MRS Symp. Proc., 10.1557/PROC-762-A9.5, 762, A9.5.1-9.5.6, 2003.04.
323. K. Takenaka, M. Onishi, M. Takeshita, T. Kinoshita, K. Koga, M. Shiratani, and Y. Watanabe, Anisotropic Plasma Chemical Vapor Deposition of Copper Films in Trenches, MRS Symp. Proc., 10.1557/PROC-766-E3.8, 766, E3.8.1-3.8.6, 2003.04.
324. K. Takenaka, M. Shiratani, M. Onishi, M. Takeshita, T. Kinoshita, K. Koga, and Y. Watanabe, Anisotropic Deposition of Copper by H-Assisted Plasma Chemical Vapor Deposition, Matr. Sci. Semiconductor Processing, 10.1016/S1369-8001(02)00108-7, 5, 2, 301-304, 2003.02.
325. M. Shiratani, M. Kai, K. Koga, and Y. Watanabe, Cluster-suppressed plasma CVD for deposition of high quality a-Si:H films, Thin Solid Films, 10.1016/S0040-6090(02)01171-9, 427, 1-2, 1-5, 2003.01.
326. M. Shiratani, K. Koga, Y. Watanabe, Formation of nano-particles in microgravity plasma, Journal of Japan Society of Microgravity Application, 19, 69, 2002.10.
327. K. Takenaka, M. Onishi, M. Takenaka, T. Kinoshita, K. Koga, M. Shiratani, Y. Watanabe, Anisotropic deposition of copper by plasma CVD method, Proc. Intern. Symp. on Dry Process, 221-226, 2002.10.
328. Y. Watanabe, M. Shiratani, K. Koga, Nucleation and subsequent growth of clusters in reactive plasma (invited lecture paper), Plasma Sources Sci. Technol., 10.1088/0963-0252/11/3A/334, 11, A229-A233, 2002.08.
329. M. Shiratani, M. Kai, K. Imabeppu, K. Koga, Y. Watanabe, Correlation between Si cluster amount in silane HF discharges and quality of a-Si:H films, Proc. ESCANPIG16/ICRP5 Joint Meeting, II323--II324, 2002.07.
330. K. Takenaka, H. J. Jin, M. Onishi, K. Koga, M. Shiratani, Y. Watanabe, T. Shingen, Conformal deposition of pure Cu films in trenches by H-assisted plasma CVD using Cu(EDMDD)2, Proc. ESCANPIG16/ICRP5 Joint Meeting, II173--II174, 2002.07.
331. K. Koga, R. Uehara, M. Shiratani, Y. Watanabe, A. Komori, Carbon nano-particles due to interaction between H2 plasma and carbon wall, Proc. ESCANPIG16/ICRP5 Joint Meeting, I173--I174, 2002.07.
332. K. Takenaka, H. J. Jin, M. Onishi, K. Koga, M. Shiratani, Y. Watanabe, Anisotropic deposition of Cu with H-assisted plasma CVD, Proc. ESCANPIG16/ICRP5 Joint Meeting, II199--II200, 2002.07.
333. K. Koga, K. Imabeppu, M. Kai, A. Harikai, M. Shiratani, Y. Watanabe, Suppression methods of cluster growth in silane discharges and their application to deposition of super high quality a-Si:H films, Proc. Intern. Workshop on Information and Electrical Engineering (IWIE2002), 238-243, 2002.05.
334. K. Takenaka, M. Onishi, T. Kinoshita, K. Koga, M. Shiratani, Y. Watanabe, T. Shingen, Deposition of Cu films in trenches for LIS interconnects by H-assisted plasma CVD method, Proc. Intern. Workshop on Information and Electrical Engineering (IWIE2002), 227-232, 2002.05.
335. Y. Watanabe, A. Harikai, K. Koga, M. Shiratani, Clustering phenomena in low-pressure reactive plasma: basis and applications (invited lecture paper), Pure Appl. Chem. , 10.1351/pac200274030483, 74, 3, 483-487, 2002.03.
336. K. Koga, M. Shiratani, Y. Watanabe, In-situ measurement of size and density of particles in sub-nm to nm size range, Proc. Nano-technology Workshop, 13-20, 2002.02.
337. M. Shiratani, K. Koga, Y. Watanabe, Deposition of high-quality Si films by suppressing cluster growth in SiH4 high-frequency discharges, Proc. Nano-technology Workshop, 7-12, 2002.02.
338. K. Koga, M. Kai, M. Shiratani, Y. Watanabe, N. Shikatani, Cluster-suppressed plasma chemical vapor deposition method for high quality hydrogenated amorphous silicon films, Jpn. J. Appl. Phys., 10.1143/JJAP.41.L168, 41, 2B, L168-L170, 2002.02.
339. K. Takenaka, H. J. Jin, M. Onishi, K. Koga, M. Shiratani, Y. Watanabe, Deposition of pure copper thin films by H-assisted plasma CVD using a new Cu complex Cu(EDMDD)2, Proc. Intern. Symp. on Dry Process, 169-174, 2001.11.
340. Y. Watanabe, M. Shiratani, K. Koga, Nucleation and subsequent growth of clusters in reactive plasma (invited), Proc. Intern. Conf. on Phenomena in Ionized Gases, 15-16, 2001.07.
341. M. Shiratani, H. J. Jin, K. Takenaka, K. Koga, T. Kinoshita, Y. Watanabe, Development of H-assisted plasma CVD reactor for Cu interconnects, Proc. Intern. Conf. on Phenomena in Ionized Gases, 147-148, 2001.07.
342. K. Koga, T. Sonoda, N. Shikatani, M. Shiratani, Y. Watanabe, Deposition of super high quality a-Si:H thin films using cluster-suppressed plasma CVD reactor, Proc. Intern. Conf. on Phenomena in Ionized Gases, 39-40, 2001.07.
343. Y. Watanabe, M. Shiratani, K. Koga, Clustering phenomena in low-pressure reactive plasma: base and applications (invited), Proc. Intern. Symp. on Plasma Chemistry, 726-730, 2001.07.
344. M. Shiratani, K. Koga, Y. Watanabe, Cluster-less plasma CVD reactor and its application to a-Si:H film deposition, Mat. Res. Soc. Symp. Proc., 10.1557/PROC-664-A5.6, A5.6.1-A5.6.6, 2001.07.
345. M. Shiratani, A. Toyozawa, K. Koga, Y. Watanabe, Behavior of a particle injected in ion sheath of electropositive and electronegative gas discharges, Proc. Intern. Conf. on Phenomena in Ionized Gases, 153-154, 2001.07.
346. M. Shiratani, H. J. Jin, K. Takenaka, K. Koga, T. Kinoshita, Y. Watanabe, H-assisted plasma CVD of Cu films for interconnects in ultra-large-scale integration, Sci. Technol. Adv. Mater., 10.1016/S1468-6996(01)00131-0, 2, 3-4, 505-515, 2001.04.
347. M. Shiratani, K. Koga, Y. Watanabe, Plasma CVD method for Cu interconnects in ULSI (invited), Proc. of Plasma Science Symp. 2001/ 18th Symp. on Plasma Processing, 751-754, 2001.01.
348. M. Shiratani, N. Shiraishi, K. Koga, Y. Watanabe, Measurements of surface reaction probability of SiH3, Proc. of Plasma Science Symp. 2001/ 18th Symp. on Plasma Processing, 419-420, 2001.01.
349. M. Shiratani, H. J. Jin, K. Takenaka, K. Koga, T. Kinoshita, Y. Watanabe, H assisted control of quality and conformality in Cu film deposition using plasma CVD method, Proc. Advanced Metallization Conf. 2000, 271-278, 2001.01.
350. Y. Watanabe, M. Shiratani, K. Koga, Formation kinetics and control of dust particles in capacitively-coupled reactive plasma (invited), Phys. Scripta, 10.1238/Physica.Topical.089a00029, T89, 29-32, 2001.01.
351. K. Koga, K. Tanaka, M. Shiratani, Y. Watanabe, Effects of H2 dilution and excitation frequency on initial growth of clusters in silane plasma, Proc. Plasma Science Symp. 2001/ 18th Symp. on Plasma Processing, 385-386, 2001.01.
352. M. Shiratani, T. Sonoda, N. Shikatani, K. Koga, Y. Watanabe, Development of cluster-suppressed plasma CVD reactor for high quality a-Si:H film deposition, Proc. of Plasma Science Symp. 2001/ 18th Symp. on Plasma Processing, 421-422, 2001.01.
353. M. Shiratani, A. Toyozawa, K. Koga, Y. Watanabe, Behavior of a particle injected in ion sheath, Proc. of Plasma Science Symp. 2001/ 18th Symp. on Plasma Processing, 393-394, 2001.01.
354. M. Shiratani, S. Maeda, Y. Matsuoka, K. Tanaka, K. Koga, Y. Watanabe, Methods of suppressing cluster growth in silane rf discharges, Mat. Res. Soc. Symp. Proc., 10.1557/PROC-609-A5.6, A5.6.1-A5.6.6, 2000.07.
355. Kazunori Koga, Yasuhiro Matsuoka, Kenichi Tanaka, Masaharu Shiratani, Yukio Watanabe, In situ observation of nucleation and subsequent growth of clusters in silane radio frequency discharges, Applied Physics Letters, 10.1063/1.126922, 77, 2, 196-198, 2000.07, Growth processes of clusters in low-pressure and low-power silane radio frequency discharges are studied by using the newly developed double-pulse-discharge method which realizes in situ measurement of their size and density in a size range of 0.5-4 nm. The clusters begin to be composed of two size groups at about 10 ms after the discharge initiation: clusters in the small size group have an almost constant average size of about 0.5 nm through the discharge period, while those in the large one grow at about 4 nm/s in a monodisperse way. Time evolution of the measured average sizes and densities in the groups is transformed into that of size distributions assuming that the density of SinHx clusters for the small group decreases exponentially with the increase in the number of Si atoms, n, of them, and the size distribution for the large group is the lognormal one. The results show that a critical cluster size for nucleation is SinHx(n∼4)..
356. H. J. Jin, M. Shiratani, Y. Nakatake, K. Koga, T. Kinoshita, Y. Watanabe, Deposition of smooth thin Cu films in deep submicron trench by plasma CVD reactor with H atom source, Mat. Res. Soc. Symp. Proc., 10.1557/PROC-612-D9.2.1, D9.2.1-D9.2.6, 2000.07.
357. Ryuta Ichiki, Masako Shindo, Shinji Yoshimura, Kazunori Koga, Yoshinobu Kawai, Propagation characteristics of ion acoustic waves in an Ar/SF6 plasma, Journal of the Physical Society of Japan, 69, 6, 1925-1926, 2000.06.
358. Hong Jie Jin, Masaharu Shiratani, Yasuhiro Nakatake, Kazunori Koga, Toshio Kinoshita, Yukio Watanabe, Filling subquarter-micron trench structure with high-purity copper using plasma reactor with H atom source, Research Reports on Information Science and Electrical Engineering of Kyushu University, 5, 1, 57-61, 2000.03, A plasma chemical vapor deposition reactor with an additional source of H atoms, in which concentrations of both H atoms and Cu-containing radicals are controllable independently, is developed to fill fine patterns for interconnects with high-purity Cu. Cu-filling property in trench structure with the reactor is evaluated under deposition conditions of high-purity (≈100%) Cu films. The surface reaction probability β of Cu-containing radicals is deduced from the coverage shape of Cu deposition in the trench structure and its Monte Carlo simulation. With decreasing the main discharge power Pm, the β value decreases from 0.2 for Pm = 35 W to 0.01 for Pm = 3 W. Using this reactor, we have realized filling of high purity Cu in a trench 0.3 μm wide and 0.9 μm deep..
359. Y. Watanabe, M. Shiratani, T. Fukuzawa, K. Koga, Growth processes of particles up to nanometer size in high-frequency SiH4 plasma, Jour. Technical Phys., 41, 1, 505-519, 2000.01.
360. M. Shiratani, S. Maeda, K. Koga, Y. Watanabe, Effects of gas temperature gradient, pulse discharge modulation, and hydrogen dilution on particle growth in silane rf discharges, Jpn. J. Appl. Phys., 10.1143/JJAP.39.287, 39, 1, 287-293, 2000.01.
361. K. Koga, H. Naitou, Y. Kawai, Observation of Asymmetric Sheath Structure in Multi-Component Plasma Containing Negative Ions, J. Plasma Fusion Res., 2, 435-438, 1999.12.
362. Kazunori Koga, Yoshinobu Kawai, Behavior of the ion sheath instability in a negative ion plasma, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 38, 3 A, 1553-1557, 1999.12, The ion sheath instability with half the ion plasma frequency was observed around the separation grid in a double plasma containing negative ions, where the dominant negative ion species was specified from the dispersion relation of the ion acoustic wave. Detailed behavior of ion sheath instability was examined as a function of concentration of negative ions and bias potential of the separation grid. By measuring the sheath structure formed around the separation grid, it was found that when the negative ion density was increased, the ion sheath instability was suppressed. Furthermore, the peak frequency decreased with an increasing concentration of negative ions..
363. K. Koga, H. Naitou, Y. Kawai, Observation of Local Structures in Asymmetric Ion Sheath, J. Phys. Soc. Jpn., 10.1143/JPSJ.68.1578, 68, 5, 1578-1584, 1999.05.
364. K. Koga, Y. Kawai, Behavior of the Ion Sheath Instability in a Negative Ion Plasma, Jpn. J. Appl. Phys., 10.1143/JJAP.38.1553, 38, 3A, 1553-1557, 1999.03.
Presentations
1. Deposition of a-C:H films using H-assisted plasma CVD method together with tailored voltage waveforms.
2. Electron spin resonance spectroscopy of radish sprout seeds irradiated using atmospheric air dielectric barrier discharge plasmas.
3. Study on suppression of dust deposition on mirror using a compact dust trajectory analyzer .
4. Temporal development of two dimensional structure of fluctuation of interaction between plasmas and nanoparticles.
5. Fabrication of a-Si Thin Film Solar Cells with High Efficiency and Low Light Induced Degradation using Plasma CVD .
6. Growth of Silkworms Irradiated by Atmospheric Pressure Air Plasmas.
7. Inter generation transport of Plasma Growth Enhancement to Arabidopsis Thaliana.
8. Analysis of coupling between nanoparticles and radicals using pertubataion of radical density in reactive plasmas.
9. Fabrication of highly stable a-Si:H PIN solar cells using cluster suppression method.
10. Deposition of SiOx-CH3 nano-particles on fine pattern substrate.
11. Evaluation of the flux of carbon particles generated plasma-carbon wall interaction to substrates.
12. Transport of nanoparticlecloud having a fractional elementary charge by amplitude modulating pulse discharges.