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Akihiro Ikeda Last modified date:2017.07.04

Assistant Professor / Integrated Electronic Systems
Department of Electronics
Faculty of Information Science and Electrical Engineering


Graduate School
Undergraduate School


E-Mail
Homepage
http://fed.ed.kyushu-u.ac.jp/
My home page .
Phone
092-802-3732
Academic Degree
Doctor of engineering
Field of Specialization
4H-SiC device fabrication process
Outline Activities
Research theme

1. Development of SiC power device by using laser chemical processing.
Research
Research Interests
  • Study on 4H-SiC device fabrication process
    keyword : 4H-SiC, Device, Process
    2013.04~2017.05.
Academic Activities
Papers
1. L. Li, A. Ikeda, T. Asano, Enhanced Low-Temperature Oxidation of 4H-SiC Using SrTi1-xMgxO3-δ, Materials Science Forum, 897, 2017.05.
2. R. Sumina, A. Ikeda, H. Ikenoue, T. Asano, Thickness dependence of doping characteristic in Al doping into 4H-SiC by laser irradiation to deposited Al film, Workshop Digest of Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 2016.07.
3. L. Li, A. Ikeda, T. Asano, Enhanced thermal oxidation using Sr Ti1-x Mgx O3-δ cata-lyst and its application to 4H-SiC, Workshop Digest of Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 2016.07.
4. A. Ikeda, R. Sumina, H. Ikenoue, T. Asano, Al Doping from Laser Irradiated Al Film Deposited on 4H-SiC, Materials Science Forum, 858, 2016.05.
5. R. Kojima, H. Ikenoue, M. Suwa, A. Ikeda, D. Nakamura, T. Asano, T. Okada, Improvement in contact resistance of 4H-SiC by excimer laser doping using silicon nitride films, Proc. SPIE 9738, Laser 3D Manufacturing III, 2016.04.
6. L. Li, A. Ikeda, Tanemasa Asano, Enhanced oxidation of Si using low-temperature oxidation catalyst SrTi1− x Mg x O3−δ, Japanese Journal of Applied Physics, 55, 2016.04.
7. A. Ikeda, R.Sumina, H. Ikenoue, T. Asano, Al doping of 4H-SiC by laser irradiation to coated Al film and its application
to junction barrier Schottky diode, Japanese Journal of Applied Physics, 55, 2016.04.
8. R. Takigawa, K. Nitta, A. Ikeda, T. Asano, High-speed Via Hole Filling Using Electrophoresis of Ag Nanoparticles, Proceedings of The IEEE International Conference on 3D System Integration, 2015.09.
9. A. Ikeda, D. Marui, H. Ikenoue, T. Asano, Extremely Enhanced Diffusion of Nitrogen in 4H-SiC Observed in Liquid-Nitrogen Immersion Irradiation of Excimer Laser, Material Science Forum, Vol.821-823, 2015.05.
10. A. Ikeda, D. Marui, H. Ikenoue, T. Asano, Nitrogen doping of 4H-SiC by KrF excimer laser irradiation in liquid nitrogen, Jpn. J. Appl. Phys., Vol.54, p.04DP02, 2015.01.
11. M. Koganemaru, M. Uchino, A. Ikeda, T. Asano, Examination of residual stress measurement in electronic packages using phase-shifted sampling moire method and X-ray images, Proc. of IEEE 5th Electronics System-Integration Technology Conference, 2014.09.
12. D. Marui, A. Ikeda, K. Nishi, H. Ikenoue, T. Asano, Aluminum doping of 4H-SiC by irradiation of excimer laser in aluminum chloride solution, Jpn. J. Appl. Phys., Vol.53, p.06JF03, 2014.06.
13. Koji Nishi, Akihiro Ikeda, Daichi Marui, Hiroshi Ikenoue, Tanemasa Asano, n- and p-type doping of 4H-SiC by wet-chemical laser processing, Materials Science Forum, Vols. 778-780, 2014.02.
14. Akihiro Ikeda, Kiyoshi Nakahara, LinJin Qiu, Tanemasa Asano, Surface Passivation of Cu Cone bump by Self-Assembled-Monolayer for Room Temperature Cu-Cu Bonding, Proceedings of IEEE International 3D system integration conference 2013, 2013.10.
15. Masatoshi Kozaki, Yuishiro Higuchi, Akihiro Ikeda, Hisao Kuriyaki, Kiyoshi Toko, Development of New Oxygen Sensor by Microfabrication of Single-Crystal CuFeTe2 Thin Films, Sensors and Materials, Vol.25, No.7, 2013.08.
16. Akihiro Ikeda, Koji Nishi, Daichi Marui, Hiroshi Ikenoue, Tanemasa Asano, Characteristic of pn Junction Formed in 4H-SiC by using Excimer-laser Processing in Phosphoric Solution , Ext. Abst. the 13th International Workshop on Junction Technology 2013, 2013.06.
17. Qiu Lijing, Akihiro Ikeda, Tanemasa Asano, Effect of Coating Self-Assembled Monolayer on Room-Temperature Bonding of Cu Micro-Interconnects, JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 6, 2013.06.
18. Koji Nishi, Akihiro Ikeda, Hiroshi Ikenoue, Tanemasa Asano, Phosphorus Doping into 4H-SiC by Irradiation of Excimer Laser in Phosphoric Solution, JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 6, 2013.06.
19. Qiu Lijing, Akihiro Ikeda, Tanemasa Asano, Room-Temperature Cu Microjoining with Ultrasonic Bonding of Cone-Shaped Bump, JAPANESE JOURNAL OF APPLIED PHYSICS, 52, 4, 2013.04.
20. Yusuke Tahara, K. Nakashi, K. Jia, Akihiro Ikeda, Kiyoshi Toko, Development of a Portable Taste Sensor with a Lipid/Polymer Membrane, Sensors , Vol.13, No.1, 2013.01.
21. Akihiro Ikeda, K. Nishi, Hiroshi Ikenoue, Tanemasa Asano, Phosphorus doping of 4H SiC by liquid immersion excimer laser irradiation, Applied Physics Letters, Vol.102, 2013.01.
22. Yusuke Tahara, Yoshihiro Maehara, Ji Ke, Akihiro Ikeda, Kiyoshi Toko, Development of a Multichannel Taste Sensor Chip for a Portable Taste Sensor, 2012 IEEE SENSORS PROCEEDINGS, 414-417, 2012.10.
23. L. Qiu, K. Nakahara, 池田 晃裕, 浅野 種正, Surface protection of copper by self assembled monolayer for low-temperature chip bonding, Proceedings of International IEEE Workshop on Low Temperature Bonding for 3D Integration, 2012.05.
24. T. Shuto, N. Watanabe, Akihiro Ikeda, T. Higashimachi, Tanemasa Asano, Room-Temperature Microjoining of LSI Chips on Poly(ethylene naphthalate) Film Using Mechanical Caulking of Au Cone Bump, Jpn. J. Appl. Phys., 51, 2012.04.
25. Akihiro Ikeda, Naoya Watanabe, Tanemasa Asano, High Frequency Signal Transmission Characteristics of Cone Bump Interconnections, Technical Digest of the IEEE International 3D System Integration Conference, 2012.02.
26. T. Shuto, N. Watanabe, A. Ikeda, T. Asano, Low-Temperature Bonding of LSI Chips to PEN Film Using Au Cone Bump for Heterogeneous Integration, Technical Digest of the IEEE International 3D System Integration Conference, 2012.02.
27. Yusuke Tahara, Akihiro Ikeda, Yoshihiro Maehara, Kiyoshi Toko,, Design of Miniaturized Taste Sensor Chip with LPID/Polymer Membranes, Proceeding of 9th Asian Conference on Chemical Sensors, p.281, 2011.11.
28. T. Shuto, N. Watanabe, A. Ikeda, T. Higashimachi, T. Asano, Micro-joining of LSI Chips on Poly(ethylene naphthalate) Using Compliant Bump, Jpn. J. Appl. Phys., 50, 06GM05, 2011.06.
29. T. Shuto, N. Watanabe, A. Ikeda, T. Higashimachi, T. Asano , Direct Bonding of LSI Chips to Flexible Substrate using Compliant Bump
, Proceedings of IDW'10, The 17th international Display Workshops, pp.1717-1720, 2010.12.
30. A. IKEDA, K. KAJIWARA, N. WATANABE, T. ASANO, High-Frequency Signal Transmission Characteristics of Coplanar Waveguides with Cone Bump Interconnections, Proceedings of IEEE TENCON 2010, pp.21-24, 2010.11.
31. A. Ikeda, K. Kajiwara, N. Watanabe, T. Asano, Effect of Argon/Hydrogen Plasma Cleaning on Electroless Ni Deposition on Small-Area Al Pads, Japanese Journal of Applied Physics, Vol.49, No.8, pp. 08JA05-4, 2010.08.
32. T. Asano, N. Watanabe, I. Tsunoda, Y. Kimiya, K. Fukunaga, M. Handa, H. Arao, Y. Yamaji, M. Aoyagi, T. Higashimachi, K. Tanaka, T. Takao, K. Matsumura, A. Ikeda, Y. Kuroki, T. Tsurushima, Compliant Bump Technology for Back-Side Illuminated CMOS Image Sensor, 2009 IEEE 59TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, pp.40-45, pp.40-45, 2009.05.
33. Akihiro Ikeda, Atsushi Sakamoto, Reiji Hattori, Yukinori Kuroki, Electroless Ni-B plating on SiO2 with 3-aminopropyl-triethoxysilane as a barrier layer against Cu diffusion for through-Si via interconnections in a 3-dimensional multi-chip package, Thin Solid Films, Vol. 517, pp.1740–1745, 2009.01.
34. Masaya Hirade, Hajime Nakanotani, Reiji Hattori, Akihiro Ikeda, Masayuki Yahiro, Chihaya Adachi , Low-Threshold Blue Emission from First-Order Organic DFB Laser Using 2,7-bis[4-(N-carbazole)phenylvinyl]-9,9'-Spirobifluorene as Active Gain Medium, Molecular Crystals and Liquid Crystals, Volume 504, pages 1 - 8
, 2009.01.
35. A. Ikeda, K. Kajiwara, Y. Kimiya, Y. Fukunaga, Y. Kuroki, Effects of plasma cleaning conditions on the characteristics of MOSFETs for electroless Ni plating on Al pads, Proceddings of 30th International Symposium on Dry Process, pp.101-102, 2008.11.
36. Akihiro Ikeda, Atsushi Sakamoto, Reiji Hattori, Yukinori Kuroki, Electroless Ni-B plating on SiO2 with 3-aminopropyl-triethoxysilane as a barrier layer for through-Si via interconnections, Digest of Technical Papaers of International 3D System Integration Conference 2008 (3D-SIC), pp.69-76, 2008.05.
37. Akihiro Ikeda, Yashuhiro Kimiya, Yoshiaki Fukunaga, Hiroshi Ogi, Reiji Hattori, Hisao Kuriyaki, Yashuhide Ohno, Yukinori Kuroki , Effects of Electroless Ni/Sn Bump Formation Using Hydrogen-Plasma Reflow on the Electrical Characteristics of MOSFETs
, Proceeding of 9th Electronics Packaging Technology Conference (EPTC 2007), pp.926-930, 2007.12.
38. Akihiro Ikeda, Tsubasa Saeki, Atsushi Sakamoto, Yosuke Sugimoto, Yasuhiro Kimiya, Yoshiaki Fukunaga, Reiji Hattori, Hisao Kuriyaki, Yukinori Kuroki, Uniformity of an Electroless Plated Ni on a Pad Connected to Different Size Pads or a Pn Junction for Under Bump Metallurgy in a Flip-Chip Assembly, IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES, VOL. 30, NO. 3, pp. 494-499, 2007.09.
39. Akihiro Ikeda, Kiyoshi Hamaguchi, Hiroshi Ogi, Kazuya Iwasaki, Reiji Hattori, Yukinori Kuroki, Mobility change of MOSFETs in a chip-stacked multichip package, Electronics and Communications in Japan (Part II: Electronics), Volume 89, Issue 7, 2006, P 1-8, 2006.07.
40. Shinji Aramaki, Akira Ohno, Yoshimasa Sakai, Masayasu Tazoe, Shintaro Sugimoto, Gordon Yip, Akihiro Ikeda, Reiji Hattori, High-Resolution AM-OLED Pixel Array using Solution Processed Organic TFTs, AM-FPD’06 Digest of Technical Papers, p.57, 2006.07.
41. Akihiro Ikeda, Yosuke Sugimoto, Tomonori Kuwada, Satoru Kajiwara, Tsuyoshi Fujimura, Kazuya Iwasaki*,, ASTUDY OF THE RELIABILITY OF MOSFETS IN TWO STACKED THIN CHIPS FOR 3D SYSTEM IN PACKAGE, Proc. IEEE 43rd International Reliability Physics Symposium, pp. 578-579, 2005.04.
42. Rohana Perera, Akihiro Ikeda, Yukinori Kuroki, A Recessed Channel MOSFET with Plasma Grown Silicon Oxynitride Gate Dielectric, Research Reports on Information Science and Electrical Engineering of Kyushu University, Vol. 10, No. 1, pp. 15-20, 2005.03.
43. Hisao Kuriyaki, Yuichiro Higuchi, Takeshi Nakamura, Akihiro Ikeda, and Yukinori Kuroki, Microfabrications of Single Crystal CuFeTe2Thin Films for New Type of Oxygen Sensors, Proc. 7th International Joint Symposium Between ChungNam-National-University and Kyushu-University, pp. 150-153, 2005.01.
44. Tsuyoshi Fujimura, Shinichi Etoh, Akihiro Ikeda, Reiji Hattori, and Yukinori Kuroki, Mass-production fabrication of miniaturized plastic chip devices for biochemical applications, Proceeding of Device and Process Technologies for MEMS, Microelectronics, and Photonics III,SPIE, Vol. 5276, pp.392-399, 2004.12.
45. Rohana Perera, Akihiro Ikeda, Yukinori Kuroki, Simulated Characteristics of Deep-submicrometer Recessed Channel epi-MOSFETs, Research Reports on Information Science and Electrical Engineering of Kyushu University, Vol. 9 No. 2, pp. 67-72, 2004.09.
46. Akihiro Ikeda, Rohana Perera, Yukinori Kuroki, Recessed Channel MOSFET Using Low Temperature Plasma Gate Oxide on P on P+ Epitaxial Si Wafer, Proceedings of 17th Symposium on Plasma Science for Materials , pp.76, 2004.07.
47. Akihiro Ikeda, Tomonori Kuwata, Satoru Kajiwara, Tsuyoshi Fujimura, Hisao Kuriyaki, Reiji Hattori,, Design and Measurements of Test Element Group Wafer Thinned to 10μm
for 3D System in Package, Proc. IEEE Internal Conference on Microelectronic Test Structures,, Vol.17, pp.161- 164, 2004.03.
48. Yamashita H, Amemiya I, Takeuchi K, Masaoka H, Takahashi K, Ikeda A, Kuroki Y, Yamabe M, Complementary exposure of 70 nm SoC devices in electron projection lithography, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 21, 6, Vol.21 No.6 pp.2645-2649, 2003.12.
49. Tsuyoshi Fujimura, Akihiro Ikeda, Shin-ichi Etoh, Reiji Hattori, Yukinori Kuroki, Masahiro Hidaka, Suk Sang Chang, Fabrication of Absorber-Embedded in Membrane Type Deep X-ray Exposure
Mask with Wide Exposure Area Made with Si Substrate
, Digest of papers Microprocess and Nanotechnology , pp.86-87, 2003.11.
50. Rohana Perera, Akihiro Ikeda, Reji Hattori, Yukinori Kuroki, Anomalous Leakage Current in Silicon Oxynitride Thin Films Grown
by Microwave Excited Nitrogen Plasma Nitridation, Proceedings of 7th Internationa Conference on Properties and Applications of Dielectric Materials, pp.1084-1087, 2003.06.
51. Fujimura T, Ikeda A, Etoh S, Hattori R, Kuroki Y, Chang SS, Fabrication of open-top microchannel plate using deep X-ray exposure mask made with silicon on insulator substrate, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS, 42, 6B, Vol.42 No.6B pp.4102-4106, 2003.06.
52. Rohana Perera, Akihiro Ikeda, Reji Hattori, Yukinori Kuroki, Leakage Current Characteristics of Al/SiON/p-Si Capacitors with Silicon Oxynitride
Thin Films Grown by Plasma Nitridation
, Proceeding of International Symposium on Information Science and Electrical Engineering, pp.518-521, 2003.05.
53. Perera R, Ikeda A, Hattori R, Kuroki Y, Trap assisted leakage current conduction in thin silicon oxynitride films grown by rapid thermal oxidation combined microwave excited plasma nitridation, MICROELECTRONIC ENGINEERING, 65, 4, MICROELECTRON ENG 65 (4): 357-370 MAY 200, 2003.03.
54. Perera R, Ikeda A, Hattori R, Kuroki Y, Effects of post annealing on removal of defect states in silicon oxynitride films grown by oxidation of silicon substrates nitrided in inductively coupled nitrogen plasma, THIN SOLID FILMS, 423, 2, Vol. 423 (2): 212-217 JAN 15 2003, 2003.01.
55. Akihiro Ikeda, Reiji Hattori, Yukinori Kuroki, Oxynitridation of Si using Inductively Coupled Nitrogen Plasma for Flash Memory Applications,, Proceedings of XXV International Conference on Phenomena in Ionized Gases, Vol.2, pp.125-126, 2001.07.
56. Ikeda A, Abd Elnaby M, Fujimura T, Hattori R, Kuroki Y, Oxynitridation of silicon with nitrogen plasma for flash memory applications characterized by high frequency capacitance-voltage measurements, THIN SOLID FILMS, 385, 1-2, Vol. 385 (1-2): 215-219 APR 2 2001, 2001.04.
57. Takagi K, Ikeda A, Fujimura T, Kuroki Y, Inductively coupled plasma application to the resist ashing, THIN SOLID FILMS, 386, 2, Vol. 386 (2): 160-164 MAY 15 2001, 2001.03.
58. Ikeda A, Abd Elnaby M, Hattori R, Kuroki Y, Effect of nitrogen plasma conditions on electrical properties of silicon oxynitrided thin films for flash memory applications, THIN SOLID FILMS, 386, 1, Vol. 386 (1): 111-116 MAY 1 2001, 2001.03.
59. Fujimura T, Kuroki Y, Hisakado T, Ikeda A, Hattori R, Hakiai Y, Hidaka M, Choi JY, Chang SS, Film density dependence of polymethylmethacrylate ablation under synchrotron radiation irradiation, JPN J APPL PHYS, 40, 2A, JPN J APPL PHYS 1 40 (2A): 916-917 FEB 2001, 2001.02.
60. T. Fujimura, S. Etoh, S. Ishikawa, A. Ikeda, R. Hattori, Y. Kuroki, High Aspect Ratio Microchip-Based Capillary Electrophoresis Device using Chemically Machinable Photosensitive Glass Substrate, Digest of papers Microprocess and Nanotechnology 2000, pp.68-69, 2000.11.
61. T. Fujimura, S. Etoh, S. Ishikawa, A. Ikeda, R. Hattori, S. S. Chang,Y. Kuroki, New Microchip-Based Capillary Electrophoresis Device for Biochemical Analysis, Proceeding of Int. Symp. Smart Structures and Microsystems, pp.19-21, 2000.06.
62. M. Abd Elnaby, Akihiro Ikeda, Reiji Hattori, Yukinori Kuroki, Effect of Nitrogen Plasma Conditions on the Electrical Properties ofSilicon Oxynitrided Thin Films , Proceedings of The 12th International Conference on Microelectronics, pp.251-256, 2000.01.
63. A. Ikeda, M. Abd. Elnaby, T. Fujimura, R. Hattori, Y. Kuroki,, Oxynitridation of Si with Nitrogen Plasma for Flash Memory and its High Frequency C-V Characteristics, 4th International Conference on Circuits, Systems, Comunications and Computers, pp.178-182, 2000.01.
64. A. Ikeda, Tsuyoshi Fujimura, Ken-Ich Takagi, Y. Kuroki, , Thermal Oxidation Characteristics of Oxide Grown on Si Exposed to Nitrogen Plasma and its Reliability , Proceedings of International Workshop on Advanced LSI's and Devices, pp.6-11, 1999.07.
65. A. Ikeda, T. Sadou, H. Nagashima, K. Kouno, N. Yoshikawa, K.Tsukamoto,Y. Kuroki, Electronic Properties of MOS Capacitor Exposed to Inductively Coupled Hydrogen Plasma, THIN SOLID FILMS, 345, 1, Vol. 345 (1): 172-177 MAY 7 1999, 1999.03.
66. Akihiro Ikeda, Satoru Iwasaki, Hidenori Nagashima, Seiichi Ohta andYukinori Kuroki, Etching Characteristics of Si and SiO2 Using Inductively Coupled Hydrogen Plasma, Proceedings of the 3rd International Conference on Reactive Plasmas, pp.490-491, 1997.01.
Presentations
1. L. Li, A. Ikeda, T. Asano, Enhanced Oxidation of 4H-SiC Using SrTi1-xMgxO3-δ Catalyst, European Conference on Silicon Carbide & Related Materials, , 2016.09.29.
2. A. Ikeda, R. Tsutsui, R. Sumina, Hiroshi Ikenoue, Tanemasa Asano, Effects of Substrate Heating on Al Doping Performed by Irradiating Laser Beam to Al Film on 4H-SiC, European Conference on Silicon Carbide & Related Materials, 2016.09.26.
3. L. Li, A. Ikeda, T. Asano, Enhanced thermal oxidation using SrTi1-xMgxO3-δ catalyst and its application to 4H-SiC, Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 2016.07.06.
4. R. Sumina, A. Ikeda, H. Ikenoue, T. Asano, Thickness dependence of doping characteristic in Al doping into 4H-SiC by laser irradiation to deposited Al film, Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 2016.07.05.
5. A. Ikeda, D. Marui, R. Sumina, H. Ikenoue, T. Asano, Increased Doping Depth of Al in Wet-chemical Laser Doping of 4H-SiC by Expanding Laser Pulse, 7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting 2016 (ISTDM2016), 2016.06.11.
6. R. Kojima, H. Ikenoue, A. Suwa, A. Ikeda, D. Nakamura, T. Asano, T. Okada, Diffusion Behavior of Nitrogen Doping in 4H-SiC by Laser Ablation of a SiNx Film on the 4H-SiC Substrate, Optics and Photonics International Congress 2016, 2016.05.19.
7. R. Kojima, H. Ikenoue, T. Suwa, A. Ikeda, Daisuke Nakamura, T. Asano, Tatsuo Okada, Improvement in contact resistance of 4H-SiC by excimer laser doping using silicon nitride films, SPIE Photonics West, 2016.02.15.
8. L. Li, A. Ikeda, T. Asano, Enhanced Oxidation of Si Using Low-Temperature Oxidation Catalyst SrTi1-xMgxO3-α, MNC 2015, 2015.11.12.
9. A. Ikeda, R. Sumina, H. Ikenoue, T. Asano, Al doping from laser irradiated Al film deposited on 4H‐SiC, 16th International Conference on Silicon Carbide and Related Materials, 2015.10.05.
10. A. Ikeda, R. Sumina, H. Ikenoue, T. Asano, Al Doping of 4H-SiC by Laser Irradiation to Coated Film and Its Application to Junction Barrier Schottky Diode, SSDM 2015, 2015.09.28.
11. A. Ikeda, R. Sumina, R. Yoshida, H. Ikenoue, T. Asano, Doping of 4H-SiC by laser irradiation with liquid chemical source, The 11th International Nanotechnology Conference on Communication and Cooperation, 2015.03.11.
12. R. Kojima, H. Ikenoue, Yosuke Watanabe, A. Ikeda, Daisuke Nakamura, T. Asano, Tatsuo Okada, Local nitrogen doping in 4H-SiC by laser irradiation in atmospheric-pressure plasma , SPIE Photonics West, 2015.02.11.
13. A. Ikeda, D. Marui, H. Ikenoue, T. Asano, Nitrogen doping of 4H-SiC by excimer laser irradiation in liquid nitrogen , SSDM 2014, 2014.09.09.
14. A. Ikeda, D. Mrui, H. Ikenoue, T. Asano, Extremely Enhanced Diffusion of Nitrogen in 4H-SiC Observed in Liquid-Nitrogen Immersion Irradiation of Excimer Laser, 10th European Conference on Silicon Carbide and Related Materials, 2014.09.22.
15. M. Kozaki, N. Nagashima, A. Ikeda, Hisao Kuriyaki, Kiyoshi Toko, Micro-fabrication of layered material CuFeTe2 using centrifugal etching for oxygen sensor, IUMRS-ICA 2014, 2014.08.26.
16. Takigawa Ryo, H. Kawano, T. Shuto, A. Ikeda, T. Takao, T. Asano, Room-temperature vacuum packaging using ultrasonic bonding with Cu compliant rim, 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, 2014.07.15.
17. Akihiro Ikeda, Tanemasa Asano, Electroless Cu plating on Poly(ethylene 2,6-naphthalate) with Surface Modification
by Oxygen Plasma, 8th International Conference on Reactive Plasmas / 31th Symposium on Plasma Processing, 2014.02.06.
18. Akihiro Ikeda, L.J. Qiu, Kiyoshi Nakahara, Tanemasa Asano, Surface Passivation of Cu Cone bump by Self-Assembled-Monolayer for Room Temperature Cu-Cu Bonding, IEEE International 3D System Integration Conference, 2013.10.03.
19. Akihiro Ikeda, Kouji Nishi, Daichi Marui, Hiroshi Ikenoue, Tanemasa Asano, Characteristic of pn Junction Formed in 4H-SiC by using Excimer-laser Processing in Phosphoric Solution, IEEE International Workshop on Junction Technology, 2013.06.06.
20. K. Nishi, Akihiro Ikeda, Hiroshi Ikenoue, Tanemasa Asano, Phosphorus Incorporation in 4H- SiC by Irradiation of Excimer Laser in Phosphoric Solution, International Microprocess and Nanotechnology Conference, 2012.11.01.
21. Yusuke Tahara, Y. Maehara, J. Ke, Akihiro Ikeda, Kiyoshi Toko, Development of a Multichannel Taste Sensor Chip for a Portable Taste Sensor, IEEE Sensors 2012, 2012.10.29.
22. Akihiro Ikeda, K. Nishi, Hiroshi Ikenoue, Tanemasa Asano, Phosphorus Doping of 4H-SiC by KrF Excimer Laser Irradiation in Phosphoric Solution, International Conference on Solid State Devices and Materials, 2012.09.26.
23. Akihiro Ikeda, K. Nishi, K. Yoshikawa, Y. Kozuki, Tanemasa Asano, Doping SiC with Phosphorus Using Wet-Laser Chemical Processing, 8th International Micro & Nano Engineering Conference (MNE), 2012.09.16.
24. L. Qiu, K. Nakahara, Akihiro Ikeda, Tanemasa Asano, Surface protection of copper by self assembled monolayer for low-temperature chip bonding, Proceedings of International IEEE Workshop on Low Temperature Bonding for 3D Integration, 2012.05.22.
25. Thickness uniformity of electroless Ni plating on I/O pads connected to pn junctions for under bump metallurgy.
26. Fabrication and Evaluation of Electroless Sn Plating Bump for Chip Level Stacked SiP Connection.
27. 無電解CoWPめっき膜のCu拡散バリア性能評価.
28. Diffusion Barrier Properties of Electroless Plated CoWP layer on Silicon Nitride Film.
Membership in Academic Society
  • JSAP
  • IEICE