Kyushu University Academic Staff Educational and Research Activities Database
List of Papers
Seigi Mizuno Last modified date:2019.12.03

Professor / Solid Surface Science / Department of Advanced Materials Science and Engineering / Faculty of Engineering Sciences


Papers
1. Mohammad Tawheed Kibria, Takeshi Nakagawa, and Seigi Mizuno, Morphology and Magnetism of Fe on graphene and thick graphite grown on SiC, AppliedSurface Science, 2020.01.
2. Rezwan Ahmed, Takeshi Nakagawa, Seigi Mizuno, Structure determination of ultra-flat stanene on Cu(111) using low energy electron diffraction, Surface Science, 691, 121498, 2020.01.
3. Rezwan Ahmed, Takamasa Makino, Jessiel Siaron Gueriba, Seigi Mizuno, Wilson Agerico Diño and Michio Okada, Quantitative Multilayer Cu(410) Structure and Relaxation Determined by QLEED, Scientific Reports, 9, 16882-1-8, 2019.11.
4. Hiroshi Ando, Anton Visikovskiy, Takeshi Nakagawa, Seigi Mizuno, and Satoru Tanaka, Structure determination of hydrogen-terminated 4H-SiC(0001) by LEED, Phys. Rev. B, 99, 235434, 2019.08.
5. Koutaro Nishihara, Tatsushi Nomitsu, Takeshi Nakagawa, Seigi Mizuno, Structural investigation and magnetic properties of oxygen adsorption on ultrathin Fe(110) film, Surface Science, 10.1016/j.susc.2019.03.001, 685, 34-39, 2019.07, We have investigated oxygen induced surface structures on Fe(110) thin film and their magnetic properties using low energy electron diffraction (LEED) and surface magneto-optic Kerr effect (SMOKE). We have determined two chemisorbed structures, p(2 × 2) at 0.25 monolayer (ML) and p(3 × 2) at 0.33 ML using a dynamical LEED analysis. We found that oxygen atoms adsorb in long bridge sites on p(2 × 2) and move to three fold hollow sites on p(3 × 2) due to a steric repulsion. During chemisorption, proceeding the formation of FeO, the topmost surface of Fe film is ferromagnetic and with further oxygen adsorption the surface loses ferromagnetism in accordance with the oxide formation..
6. Md Kabiruzzaman, Rezwan Ahmed, Takeshi Nakagawa, Seigi Mizuno, Coadsorption study of Pb and Sb on Cu(001) by low energy electron diffraction, ICIEV-ISCMHT 2017, 10.1109/ICIEV.2017.8338577, 2018-January, 1-5, 2018.04, Room temperature coadsorption of Pb and Sb on Cu(001) has been studied by low energy electron diffraction (LEED). A p(4×4) structure has been obtained by Pb and Sb at coverages of ∼0.25 and ∼0.125, respectively. This coverage combination is similar to the Pb and Bi study on Cu(001) [1]. This phase is confirmed by clear LEED patterns up to 250 eV. Above this energy some points of p(4×4) phase has been disappeared and only c(4×4) points remain. Based on LEED theory, using computer simulation and similarity of the coverage combination with Pb and Bi study, here a surface alloy model has been proposed and determined. The best-fit structure of the model and its consistency with the experimental results has been discussed in detail..
7. Md Kabiruzzaman, Rezwan Ahmed, Takeshi Nakagawa, Seigi Mizuno, Ordered mixed rows of (Pb + Sn) and (Pb + Sb) on Cu(001)
A coadsorption study and structure determination using low energy electron diffraction, Surface Science, 10.1016/j.susc.2018.06.002, 677, 128-134, 2018.11, The surface alloys of (Pb, Sn) and (Pb, Sb) on Cu(001) obtained via the coadsorption method were independently determined using tensor low-energy electron diffraction (LEED). Both surface alloys were obtained under the p(4 × 4) phase. The determined structures consisted of mixed rows of the adsorbates in a one-dimensional chain arrangement. These mixed rows are buckled differently in each row. The best-fit structure indicates that the Sn or Sb atoms are located on the four-fold hollow sites while the Pb atoms are displaced toward the vacancies. The bond lengths of Sn or Sb atoms with Cu underneath of the alternative mixed chains are reduced by 4.8% or 5.9%, respectively, compared to the bulk values. We consider that, the large reductions of these bond lengths and the tendency of the adsorbates to make alloy at the surface stabilize the structure. The other structural parameters, bonding effects of the surrounding Cu atoms with the adsorbates, and similar characteristics of the elements located in the same period of periodic table are discussed in detail. On the basis of the structural characterization, the mechanisms of the formation of the p(4 × 4) phase are proposed..
8. Mohammad Tawheed Kibria, Tatsushi Nomitsu, Takeshi Nakagawa, Seigi Mizuno, Investigation of Magnetic Dead Layer on Iron Silicide Surfaces, e-Journal of Surface Science and Nanotechnology, 10.1380/ejssnt.2018.101], 16, 101-104, 2018.04, We report the magnetic dead layer at the interfaces between Fe and Si(111) surfaces. We prepared two ultrathin iron-silicides, c(8×4) prepared at 900 K and p(2×2) at 700 K, and clean reconstructed 7×7 surface for the silicon templates. By using magneto-optical Kerr effect, we found that at room temperature the ferromagnetic order appears at 5.5 ML, 8.2 ML, and 10.9 ML for Fe/c(8×4) silicide, Fe/p(2×2) silicide, and Fe/Si(111)-7×7 surface, respectively. From the thickness dependent magnetization measurements, we decided the magnetic dead layer for Fe/c(8×4) silicide, Fe/p(2×2) silicide, and Fe/Si(111)-7×7 to be 3.0 ML, 5.0 ML, and 7.5 ML, respectively. Our results indicate that the c(8×4) iron silicide surface prevents further silicide formation more effectively than the p(2×2) silicide and Si(111)-7×7 surface..
9. Md Kabiruzzaman, Rezwan Ahmed, Takeshi Nakagawa, Seigi Mizuno, Investigation ofC(2×2) phase of Pb and Bi coadsorption on Cu(001) by low energy electron diffraction, Evergreen, 4, 1, 10-15, 2017.04, The surface phases formed by coadsorption of Pb and Bi on a single crystal Cu(001) surface have been investigated using low energy electron diffraction (LEED). The complete phase chart is developed after the coadsorption of Pb and Bi with various coverages. Some notable phases obtained are (1×1), c(2×2), c(4×4) and c(9√2×√2). In this study, we have determined the c(2×2) phase. For individual adsorption of both Pb and Bi, we reconfirmed the c(2×2) structure with more accuracy by a tensor LEED analysis that they both occupy the four fold hollow sites. By comparing the structural parameters of coadsorption and individual adsorption, we conclude that the c(2×2) phase of coadsorption is the mixture of separate domains of the c(2×2) phases of Pb and Bi. This study opens a new window of further research into the surface phase determination of coadsorption of Pb and Bi on Cu(001)..
10. Yuki Uchida, Tasuku Iwaizako, Seigi Mizuno, Masaharu Tsuji, Hiroki Ago, Epitaxial chemical vapour deposition growth of monolayer hexagonal boron nitride on a Cu(111)/sapphire substrate, Physical Chemistry Chemical Physics, 10.1039/c6cp08903h, 19, 12, 8230-8235, 2017.04, Hexagonal boron nitride (h-BN), an atomically thin insulating material, shows a large band gap, mechanical flexibility, and optical transparency. It can be stacked with other two-dimensional (2D) materials through van der Waals interactions to form layered heterostructures. These properties promise its application as an insulating layer of novel 2D electronic devices due to its atomically smooth surface with a large band gap. Herein, we demonstrated the ambient-pressure chemical vapour deposition (CVD) growth of high-quality, large-area monolayer h-BN on a Cu(111) thin film deposited on a c-plane sapphire using ammonia borane (BH3NH3) as the feedstock. Highly oriented triangular h-BN grains grow on Cu(111), which finally coalescence to cover the entire Cu surface. Low-energy electron diffraction (LEED) measurements indicated that the hexagonal lattice of the monolayer h-BN is well-oriented along the underlying Cu(111) lattice, thus implying the epitaxial growth of h-BN, which can be applied in various 2D electronic devices..
11. Seigi Mizuno, Tomomi Matsuo, Takeshi Nakagawa, Step-by-step growth of an epitaxial Si4O5N3 single layer on SiC(0001) in ultrahigh vacuum, Surface Science, 10.1016/j.susc.2017.03.004, 661, 22-27, 2017.07, An epitaxial single Si4O5N3 layer was formed on a SiC(0001) surface using a step-by-step growth method in an ultrahigh vacuum condition. First, a silicon adsorbed SiC(0001) surface was prepared. The surface was then exposed to NO gas at 950 °C in order to form a Si2ON3 layer. Silicon was deposited on this surface and annealed to adjust the amount of adsorbed Si atoms. Finally, the surface was oxidized at 800 °C. The formation of a Si4O5N3 layer was confirmed by low-energy electron diffraction analysis, Auger electron spectroscopy, and scanning tunneling microscopy. Using this procedure, we were able to suppress the growth of graphite-like clusters on the surface, although silicate-like clusters still remained..
12. Md Kabiruzzaman, Rezwan Ahmed, Takeshi Nakagawa, Seigi Mizuno, 1D chain formation by coadsorption of Pb and Bi on Cu(001)
Determination using low energy electron diffraction, Surface Science, 10.1016/j.susc.2017.05.017, 664, 70-75, 2017.10, Coadsorption of two heavy metals, Pb and Bi, on Cu(001) at room temperature has been studied using low energy electron diffraction (LEED). c(4 × 4), c(2 × 2), and c(92×2) phases are obtained at different coverages; here, we have determined the best-fit structure of c(4 × 4) phase. This structure can be described as a 1D substitutional chain arrangement of Pb and Bi atoms between the Cu rows along the [110] direction. The unit cell in the two-dimensional (2D) surface consists of one Bi atom, two Pb atoms, and four Cu atoms with one vacancy at the center. The optimal structure parameters demonstrate that Bi atoms are located at fourfold-hollow sites and that Pb atoms are laterally displaced by 0.78 Å from the fourfold-hollow site toward the vacancy. The reasons for the formation of the c(4 × 4) structure upon deposition of Pb and Bi on Cu(001) are discussed in comparison with a similar structure formed by the individual adsorption of Pb on the same substrate..
13. Seigi Mizuno, Development of LEED apparatus using field-emission tips, Journal of the Vacuum Society of Japan, 10.3131/jvsj2.59.52, 59, 2, 52-56, 2016.01, Low-energy electron diffraction (LEED) apparatuses with field-emission (FE) tips were developed. The FE tips were fabricated by field-assisted gas etching to obtain an atomically sharp tip apex. These tips emit single-spot electron beams. Using the FE beams in conjunction with a lensless system, we observed backscattered electrons at the surface of few-layer graphene grown on SiC(0001). The obtained hexagonal patterns at sample biases of 93 V, 54 V, and 28 V were interpreted as diffraction spots derived from the graphene, the SiC(0001) substrate, and a buffer layer, respectively. On the basis of the opening angle of FE, the irradiated areas were estimated to be 350 nmq when the sample bias was 100 V. Since the FE beams were easily focused by a magnetic lens, a LEED apparatus with the focused FE beams was also examined. This approach might be useful for improving the sharpness of LEED patterns..
14. Ayhan Yurtsever, Jo Onoda, Takushi Iimori, Kohei Niki, Toshio Miyamachi, Masayuki Abe, Seigi Mizuno, Tanaka Satoru, Fumio Komori, Yoshiaki Sugimoto, Graphene
Effects of Pb Intercalation on the Structural and Electronic Properties of Epitaxial Graphene on SiC (Small 29/2016), Small, 10.1002/smll.201670142, 3882, 2016.08.
15. Ayhan Yurtsever, Jo Onoda, Takushi Iimori, Kohei Niki, Toshio Miyamachi, Masayuki Abe, Seigi Mizuno, Tanaka Satoru, Fumio Komori, Yoshiaki Sugimoto, Effects of Pb Intercalation on the Structural and Electronic Properties of Epitaxial Graphene on SiC, Small, 10.1002/smll.201600666, 3956-3966, 2016.08, The effects of Pb intercalation on the structural and electronic properties of epitaxial single-layer graphene grown on SiC(0001) substrate are investigated using scanning tunneling microscopy (STM), noncontact atomic force microscopy, Kelvin probe force microscopy (KPFM), X-ray photoelectron spectroscopy, and angle-resolved photoemission spectroscopy (ARPES) methods. The STM results show the formation of an ordered moiré superstructure pattern induced by Pb atom intercalation underneath the graphene layer. ARPES measurements reveal the presence of two additional linearly dispersing π-bands, providing evidence for the decoupling of the buffer layer from the underlying SiC substrate. Upon Pb intercalation, the Si 2p core level spectra show a signature for the existence of PbSi chemical bonds at the interface region, as manifested in a shift of 1.2 eV of the bulk SiC component toward lower binding energies. The Pb intercalation gives rise to hole-doping of graphene and results in a shift of the Dirac point energy by about 0.1 eV above the Fermi level, as revealed by the ARPES measurements. The KPFM experiments have shown that decoupling of the graphene layer by Pb intercalation is accompanied by a work function increase. The observed increase in the work function is attributed to the suppression of the electron transfer from the SiC substrate to the graphene layer. The Pb intercalated structure is found to be stable in ambient conditions and at high temperatures up to 1250 °C. These results demonstrate that the construction of a graphene-capped Pb/SiC system offers a possibility of tuning the graphene electronic properties and exploring intriguing physical properties such as superconductivity and spintronics..
16. Md. Sazzadur Rahman, Md. Amirul Islam, Bidyut Baran Saha, NAKAGAWA Takeshi, Seigi Mizuno, Structure determination of the ordered (2×1) phase of NiSi surface alloy on Ni(111) using low-energy electron diffraction, Jpn. J. Appl. Phys., 54 , 125701-1-5, 2015.04.
17. Hiroki Ago, Yui Ogawa, Kenji Kawahara, Yoshito Ito, Baoshan Hu, Carlo M. Orofeo, Pablo Soils Fernandez, Hiroko Endo, Hiroki Hibino, Seigi Mizuno, Kazuhito Tsukagoshi, Masaharu Tsuji, Epitaxial CVD growth of high-quality graphene and recent development of 2D heterostructures, 61st IEEE International Electron Devices Meeting, IEDM 2015 2015 IEEE International Electron Devices Meeting, IEDM 2015, 10.1109/IEDM.2015.7409779, 2016-February, 27.2.1-27.2.4, 2015.02, We demonstrate a novel epitaxial CVD method to grow high quality single-layer graphene using a thin Cu(111) film instead of conventional Cu foil. The atomically smooth Cu(111) catalyst produced the graphene with less defects and controlled orientation of the hexagonal lattice. The CVD graphene showed the carrier mobility as high as 20,000 cm2/Vs at room temperature. Using the uniform graphene sheet, densely aligned graphene nanoribbons were produced by a metal-assisted etching technique, resulting a high on/off ratio of 5,000. In addition, the epitaxial CVD method was applied to grow uniform double-layer graphene with more than 90% coverage. These GNRs and double-layer graphene are expected as promising candidates for semiconductor devices. Furthermore, heterostructures of MoS2 and graphene were developed, and unique photo-responsive devices were observed..
18. Md Sazzadur Rahman, Mohammad Tawheed Kibria, Takeshi Nakagawa, Seigi Mizuno, Surface structure study and structure determination of (√3 × √3)R 30° phase of Si-adsorption on Ni(111) by LEED, 4th International Conference on Informatics, Electronics and Vision, ICIEV 2015 2015 4th International Conference on Informatics, Electronics and Vision, ICIEV 2015, 10.1109/ICIEV.2015.7334025, 2015.11, The phase evolution of Si on Ni (111) was studied by LEED and AES. A new phase of Si on Ni (111) was found along with the previously reported (√3 × √3)R 30° phase. The surface structure of (√3 × √3)R 30° phase had determined, with chemical composition of Ni2Si, by using low-energy electron diffraction (LEED) analysis. The obtained nickel silicide would be helpful for understanding the formation of Schottky barrier at semiconductor-metal interface..
19. J. Yuhara, D. Kato, Seigi Mizuno, Structure of a zinc oxide ultra-thin film on Rh(100), J. Chem. Phys., 143, 174701-1-174701-7, 2015.04.
20. Md. Sazzadur Rahman, NAKAGAWA Takeshi, Seigi Mizuno, Structure determination of the ordered (√3×√3)R30°phase of Ni2Si and Ni2Ge surface alloys on Ni(111) via low-energy electron diffraction, Surf. Sci., 642, 1-5, 2015.04.
21. Hiroki Ago, Yujiro Ohta, Hiroki Hibino, Daisuke Yoshimura, Rina Takizawa, Yuki Uchida,, Masaharu Tsuji, Toshihiro Okajima, Hisashi Mitani, Seigi Mizuno, Growth Dynamics of Single-Layer Graphene on Epitaxial Cu Surfaces, Chem. Mater., 27, 5377-5385, 2015.04.
22. Md. Sazzadur Rahman, NAKAGAWA Takeshi, Seigi Mizuno, Growth of Si on Ag(111) and determination of large commensurate unit cell of high temperature phase, Jpn. J. Appl. Phys., 54, 015502-1-015502-4, 2015.04.
23. Md. Sazzadur Rahman, NAKAGAWA Takeshi, Seigi Mizuno, Germanene: Experimental Study for Graphene Like Two Dimensional Germanium, Evergreen, 1, 2, 25-29, 2014.01.
24. Ryo Kohmatsu, NAKAGAWA Takeshi, Seigi Mizuno, Growth and surface structure analysis of a new SiON single layer on SiC(0001), Surf. Sci., 628, 148-152, 2014.01.
25. Md Sazzadur Rahman, Takeshi Nakagawa, Seigi Mizuno, Study the surface structure evolution of Si-adsorption on Ag(111) by LEED-AES, 2014 International Conference on Informatics, Electronics and Vision, ICIEV 2014 2014 International Conference on Informatics, Electronics and Vision, ICIEV 2014, 10.1109/ICIEV.2014.6850865, 2014.04, Silicene, the silicon analogy of graphene, has attracted tremendous attention. Also the formation of alloys that exist only in a confined region near the surface of materials has important technological implications. In this work, we study the structural transition for silicon adsorption on Ag(111) to form a highly ordered 2-D structure and to observe the alloy formation of Si-Ag as an example of semiconductor-metal system. We obtained a mixer phase of (4×4) and (3.5×3.5) R 26° at 470 K and 490 K; a mixer free pure (4×4) structure at 520 K, which is silicene, a highly ordered 2-D honeycomb structure of silicon; and a mixer free (3.5×3.5) R 26° structure at 620 K, which indicated the alloy formation of Si-Ag with two-third monolayer silicon coverage on Ag(111)..
26. Hiroki Ago, Yui Ogawa, Masaharu Tsuji, Seigi Mizuno, Hiroki Hibino, Catalytic Growth of Graphene: Towards Large-Area Single-Crystalline Graphene, J. Phys. Chem. Lett., 3, 2228-2236, 2012.01.
27. Baoshan Hu, Hiroki Ago, Yoshito Ito, Kenji Kawahara, Masaharu Tsuji, Eisuke Magome, Kazushi Sumitani, Noriaki Mizuta, Ken Ichi Ikeda, Seigi Mizuno, Epitaxial growth of large-area single-layer graphene over Cu(1 1 1)/sapphire by atmospheric pressure CVD, Carbon, 10.1016/j.carbon.2011.08.002, 50, 1, 57-65, 2012.01, We report the atmospheric pressure chemical vapor deposition (CVD) growth of single-layer graphene over a crystalline Cu(1 1 1) film heteroepitaxially deposited on c-plane sapphire. Orientation-controlled, epitaxial single-layer graphene is achieved over the Cu(1 1 1) film on sapphire, while a polycrystalline Cu film deposited on a Si wafer gives non-uniform graphene with multi-layer flakes. Moreover, the CVD temperature is found to affect the quality and orientation of graphene grown on the Cu/sapphire substrates. The CVD growth at 1000 °C gives high-quality epitaxial single-layer graphene whose orientation of hexagonal lattice matches with the Cu(1 1 1) lattice which is determined by the sapphire's crystallographic direction. At lower CVD temperature of 900 °C, low-quality graphene with enhanced Raman D band is obtained, and it showed two different orientations of the hexagonal lattice; one matches with the Cu lattice and another rotated by 30°. Carbon isotope-labeling experiment indicates rapid exchange of the surface-adsorbed and gas-supplied carbon atoms at the higher temperature, resulting in the highly crystallized graphene with energetically most stable orientation consistent with the underlying Cu(1 1 1) lattice..
28. Jo Onoda, Tomomi Kanaoka, Megumi Kumon, Seigi Mizuno, Development of LEED apparatus using nano-tips fabricated by field-assisted etching, e-J. Surf. Sci. Nanotech. , 10, 292-296, 2012.01.
29. Carlo M. Orofeo, Hiroki Hibino, Kenji Kawahara, Yui Ogawa, Masaharu Tsuji, Ken Ichi Ikeda, Seigi Mizuno, Hiroki Ago, Influence of Cu metal on the domain structure and carrier mobility in single-layer graphene, Carbon, 10.1016/j.carbon.2012.01.030, 50, 6, 2189-2196, 2012.05, We demonstrate that domain structure of single-layer graphene grown by ambient pressure chemical vapor deposition is strongly dependent on the crystallinity of the Cu catalyst. Low energy electron microscopy analysis reveals that graphene grown using a Cu foil gives small and mis-oriented graphene domains with a number of domain boundaries. On the other hand, no apparent domain boundaries are observed in graphene grown over a heteroepitaxial Cu(111) film deposited on sapphire due to unified orientation of graphene hexagons. The difference in the domain structures is correlated with the difference in the crystal plane and grain structure of the Cu metal. The graphene film grown on the heteroepitaxial Cu film exhibits much higher carrier mobility than that grown on the Cu foil..
30. Hiroki Ago, Yui Ogawa, Masaharu Tsuji, Seigi Mizuno, Hiroki Hibino, Catalytic growth of graphene
Toward large-area single-crystalline graphene, Journal of Physical Chemistry Letters, 10.1021/jz3007029, 3, 16, 2228-2236, 2012.08, For electronic applications, synthesis of large-area, single-layer graphene with high crystallinity is required. One of the most promising and widely employed methods is chemical vapor deposition (CVD) using Cu foil/film as the catalyst. However, the CVD graphene is generally polycrystalline and contains a significant amount of domain boundaries that limit intrinsic physical properties of graphene. In this Perspective, we discuss the growth mechanism of graphene on a Cu catalyst and review recent development in the observation and control of the domain structure of graphene. We emphasize the importance of the growth condition and crystallinity of the Cu catalyst for the realization of large-area, single-crystalline graphene..
31. Yui Ogawa, Baoshan Hu, Carlo M. Orofeo, Masaharu Tsuji, Ken-ichi Ikeda, Seigi Mizuno, Hiroki Hibino and Hiroki Ago, Domain Structure and Boundary in Single-Layer Graphene Grown on Cu(111) and Cu(100) Films, Phys. Chem. Lett., 3, 219-226, 2012.01.
32. H Hibino S. Tanabe, S. Mizuno and H. Kageshima, Growth and electronic transport properties of epitaxial graphene on SiC, J. Physics D, 2012.04.
33. Baoshan Hu, Hiroki Ago, Yoshito Ito, Kenji Kawahara, Masaharu Tsuji, Eisuke Magome, Kazushi Sumitani, Noriaki Mizuta, Ken-ichi Ikeda, Seigi Mizuno, Epitaxial growth of large-area single-layer graphene over Cu(111)/sapphire by atmospheric pressure CVD, Carbon , 50, 57-65, 2012.01.
34. Jo Onoda and Seigi Mizuno, Fabrication of <110> oriented tungsten nano-tips by field-assisted water etching, Appl. Surf. Sci. , 257, 8427-8432, 2011.12.
35. Tetsuhiro Kinoshita and Seigi Mizuno, Surface structure determination of silica single layer on Mo(112) by LEED, Surf. Sci., 605, 1209-1213, 2011.12, Mo(112)表面上に形成する酸化シリコン単原子層膜の構造を、低速電子回折強度解析により決定した。この表面は触媒などのテンプレートとして注目されており、金属上の絶縁膜として応用の面でも興味深い。構造については様々な手法を用いていくつかのグループがモデルを提案していたが、相反する結論が主張されていた。本研究によってその構造を0.1Å程度の精度で決定することができた。.
36. Hiroki Ago, Yoshito Ito, Noriaki Mizuta, Kazuma Yoshida, Baoshan Hu, Carlo M. Orofeo,Masaharu Tsuji, Ken-ichi Ikeda, and Seigi Mizuno, Epitaxial Chemical Vapor Deposition Growth of Single-Layer Graphene over Cobalt Film Crystallized on Sapphire, ACS Nano, 4, 7407-7414, 2010.12.
37. Kenjiro Hayashi, Seigi Mizuno and Satoru Tanaka, LEED analysis of graphite films on vicinal 6H-SiC(0001) surface, J. Novel Carbon Resource Sciences, 2, 17-20, 2010.12.
38. Takuya Kuzumaki, Tetsuroh Shirasawa, Seigi Mizuno, Nobuo Ueno, Hiroshi Tochihara, Kazuyuki Sakamoto, Re-investigation of the Bi-induced Si(111)-(√3×√3) surfaces by low-energy electron diffraction, Surf. Sci., 604, 1044-1048, 2010.12.
39. Jo Onoda, Seigi Mizuno and Hiroki Ago, STEM observation of tungsten tips sharpened by field-assisted oxygen etching, Surf. Sci., 604, 1094-1099, 2010.12.
40. H. Yoshida, A. Okamoto, S. Mizuno and H. Tochihara, Structure determination of the Cu(001)-c(4x4)-Sn by low-energy electron diffraction, Surf. Sci., 604, 534-539, 2010.12.
41. H. Hibino, S. Mizuno, H. Kageshima, M. Nagase and H. Yamaguchi, Stacking domains of epitaxial few-layer graphene on SiC(0001), Phys. Rev. B, 80, 085406-1-6, 2009.12, SiC(0001)表面上に形成するグラフェンの積層を、低速電子顕微鏡と、その回折パターンの強度解析により決定した。.
42. T. Shirasawa, K. Hayashi, H. Yoshida, S. Mizuno, S. Tanaka, T. Muro, Y. Tamenori, Y. Harada, T. Tokushima, Y. Horikawa, E. Kobayashi, T. Kinoshita, S. Shin, T. Takahashi, Y. Ando, K. Akagi, S. Tsuneyuki and H. Tochihara, Atomic-layer-resolved bandgap structure of an ultrathin oxynitride-silicon film epitaxially grown on 6H-SiC(0001), Phys. Rev. B, 79, 241301(R)-1-4, 2009.12.
43. H. Yoshida, S. Higashi, T. Shirasawa, S. Mizuno, H. Tochihara, X. Liu and F. Komori, Determination of a (4x4) structure formed on a Cu(001) surface by adsorption of calcium, Surf. Sci., 603, 659-663, 2009.12.
44. K. Hayashi, K. Morita, S. Mizuno, H. Tochihara and S. Tanaka, Stable surface termination on vicinal 6H-SiC(0001) surfaces, Surf. Sci., 603, 566-570, 2009.12.
45. H. Ago, I. Tanaka, M. Tsuji, K. Ikeda and S. Mizuno, Hole doping to aligned single-walled carbon nanotubes from sapphire substrate induced by heat treatment, J. Phys. Chem. C , 112, 18350-18354, 2008.12.
46. J. Onoda, F. Rahman and S. Mizuno, Field emission from W tips sharpened by field-assisted nitrogen and oxygen etching, Surf. Sci., 6, 152-156, 2008.12.
47. F. Rahman, J. Onoda, K. Imaizumi and S. Mizuno, Field-assisted oxygen etching for sharp field-emission tip, Surf. Sci., 620, 2128-2134, 2008.12.
48. M.-S. Chen, S. Mizuno and H. Tochihara, Asymmetric adsorption-site of potassium atoms in the (3x2)-p2mg structure formed on Cu(001), Surf. Sci., 601, 5162-5169, 2007.12.
49. T. Shirasawa, K. Hayashi, S. Mizuno, S. Tanaka, K. Nakatsuji, F. Komori and H. Tochihara, Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface, Phys. Rev. Lett., 98, 136105-1-4, 2007.03, SiC(0001)表面上に安定な酸窒化シリコン膜が形成することを見出し、その構造を低速電子回折により決定した。この表面には単位格子中にダングリングボンドが存在せず、大気中でも安定であり、電子デバイスなどへの応用が期待できる。.
50. K. Sakamoto, P.E.J. Eriksson, S. Mizuno, N. Ueno, H. Tochihara and R.I.G. Uhrberg, Core-level photoemission study of thallium adsorbed on a Si(111)-(7x7) surface: Valence state of thallium and the charge state of surface Si atoms, Phys. Rev. B, 74, 075335-1-5, 2006.08.
51. F. Rahman and S. Mizuno, Electron emission tip at extremely low bias voltage, Jpn. J. Appl. Phys. Express Letter, 45, L752-L754, 2006.07.
52. A. Visikovskiy, S. Mizuno and H. Tochihara, Reversible electromigration of thallium adatoms on the Si(111) surface, Surf. Sci., 600, L189-L193, 2006.05.
53. H. Mitani, T. Hayashi, S. Mizuno and H. Tochihara, Origin of arc shape of LEED streaks on Li adsorbed on Cu(001) surface at lower coverage, J. Phys.: Condens. Matter, 18, 5057-5067, 2006.05.
54. S. Mizuno, F. Rahman and M. Iwanaga, Low-energy electron diffraction patterns using field-emitted electrons from tungsten tips, Jpn. J. Appl. Phys., 45, L178-L179, 2006.02.
55. T. Shirasawa, S. Mizuno and H. Tochihara, Structural analysis of the c(4x2) reconstruction in Si(001) and Ge(001) surfaces by low-energy electron diffraction, Surf. Sci., 600, 815-819, 2006.01.
56. S. Higashi, T. Ohshima, S. Mizuno and H. Tochihara, Surface structures formed by individual adsorption and coadsorption of Mn and Bi on Cu(001), studied by LEED, Surf. Sci., 600, 591-597, 2006.01.
57. H. Mitani, S. Mizuno, H. Tochihara and T. Hayashi, Coverage Dependence of Intensity of Arced Streak in Li Adsorption on Cu(001) Surface, J. Phys. Soc. Jpn., 10.1143/JPSJ.74.2663, 74, 10, 2663-2666, 74, 2663-2666, 2005.01.
58. S. Higashi, T. Shirasawa, S. Mizuno and H. Tochihara, Equivalent ordered-mixed-surface-structures of p(4x4)-p4gm formed on Cu(001) by coadsorptions of Bi+Mg and Sb+Mg, Surf. Sci., 10.1016/j.susc.2005.05.046, 588, 1-3, 167-174, 588, 167-174, 2005.01.
59. K. Hayashi, S. Mizuno, S. Tanaka, H. Toyoda, H. Tochihara and I. Suemune, Nucleation stages of carbon nanotubes on SiC(0001) by surface decomposition, Jpn. J. Appl. Phys., 10.1143/JJAP.44.L803, 44, 24-27, L803-L805, 44, L803-L805 Express Letter, 2005.01.
60. T. Shirasawa, S. Mizuno and H. Tochihara, Electron-Beam-Induced Disordering of the Si(001)-c(4x2) Surface Structure, Phys. Rev. Lett., 10.1103/PhysRevLett.94.195502, 94, 19, 94, 195502, 2005.01, Si(001)-c(4x2)清浄表面の40 K以下における電子ビーム照射効果を解明した。.
61. A. Visikovskiy, S. Mizuno and H. Tochihara, Structure of the Si(001)-(2x2)-Tl phase at 0.5 monolayer coverage, Phys. Rev. B, 10.1103/PhysRevB.71.245407, 71, 24, 71, 245407, 2005.01.
62. S. Mizuno, T. Shirasawa, Y. Shiraishi and H. Tochihara, Structure determination of Si(001)-c(4x2) surfaces at 80 K and electron beam effect below 40 K, studied by low-energy electron diffraction, Phys. Rev. B, 10.1103/PhysRevB.69.241306, 69, 24, 69, 241306(R), 2004.01.
63. S. Mizuno, J. Fukuda, M. Iwanaga and H. Tochihara, Scattering patterns and energy distribution of the scattered electrons under field emission condition of scanning tunneling microscopy, Jpn. J. Appl. Phys., 10.1143/JJAP.43.5501, 43, 8A, 5501-5505, 43, 5501-5505, 2004.01.
64. H. Tochihara, M.-S. Chen, T. Shirasawa and S. Mizuno, Ordered mixed surface structures formed by coadsorption of dissimilar meta atoms on Cu(001), Vacuum, 10.1016/j.vacuum.2003.12.109, 74, 2, 121-131, 74, 121-131, 2004.01.
65. Tetsuroh Shirasawa, Seigi Mizuno and Hiroshi Tochihara, An ordered-surface-ternary-alloy of a c(6x4) structure formed on Cu(001) by substitutional coadsorption of Mg and Bi, Surf. Sci., 10.1016/S0039-6028(03)00732-5, 538, 3, L488-L494, 538, L488, 2003.01.
66. Ming-Shu Chen, Seigi Mizuno and Hiroshi Tochihara, Determination of (root5 x root 5) R26.7deg structures formed on Cu(001) by coadsorption of Bi and K(Cs): On-top site adsorption of K(Cs), Surf. Sci., 10.1016/S0039-6028(03)00598-3, 536, 1-3, L415-L422, 536, L415, 2003.01.
67. S. Mizuno, Y.O. Mizuno and H. Tochihara, Structural determination of indium-induced Si(111) reconstructed surfaces by LEED analysis: (root3 x root3)R30deg and (4x1), Phys. Rev. B, 10.1103/PhysRevB.67.195410, 67, 19, 67, 195410, 2003.01.
68. T. Shirasawa, M.-S. Chen, S. Mizuno and H. Tochihara, An ordered surface alloy formed by attractive interaction between coadsorbates: c(2x2) on Cu(001) by Mg and Bi, Surf. Sci., 10.1016/S0039-6028(03)00359-5, 530, 1-2, L307-L312, 530, L307-L312, 2003.01.
69. T. Noda, S. Mizuno, J. Chung and H. Tochihara, T4 site adsorption of Tl atoms in a Si(111)-(1x1)-Tl structure, determined by low-energy electron diffraction analysis, Jpn. J. Appl. Phys., 10.1143/JJAP.42.L319, 42, 3B, L319-L321, 42, L319-L321, 2003.01.
70. S. Mizuno, J. Fukuda and H. Tochihara, Extraction of scattered low-energy electrons in field emission conditions, Surf. Sci., 10.1016/S0039-6028(02)01643-6, 514, 1-3, 291-297, 514, 291-297, 2002.01.
71. M.-S. Chen, S. Mizuno and H. Tochihara, Formation processes of an ordered mixed structure: Cu(001)-(2root2 x root2)R45-Li, Mg, Surf. Sci., 514, 1-3, 194-199, 514, 194-199, 2002.01.
72. S. Mizuno, M. Imaki and H. Tochihara, An ordered mixed structure formed by restructuring type coadsorption of Na and K on Ag(001), Surf. Rev. Lett., 10.1142/S0218625X01001580, 8, 6, 653-659, 8, 653-659, 2001.01.
73. S. Mizuno, Development of an advanced low-energy electron diffraction technique using field-emitted electrons from scanning tunneling microscope tips, J. Vac. Sci. Technol. B, 10.1116/1.1401751, 19, 5, 1874-1878, 19, 1874-1878, 2001.01.
74. M.-S. Chen, S. Mizuno and H. Tochihara, Determination of a (2root2 x root2)R45 structure formed by coadsorption of Li and Mg on a Cu(001) surface, Surf. Sci., 10.1016/S0039-6028(01)01194-3, 493, 1-3, 91-98, 493, 91-98, 2001.01.
75. H. Mitani, S. Mizuno and H. Tochihara, Phase diagrams of simple metals on fcc(001) metal surfaces - An application to Mg on Cu -, Surf. Sci., 10.1016/S0039-6028(01)01196-7, 493, 1-3, 106-113, 493, 106-113, 2001.01.
76. M.-S. Chen, D. Terasaki, S. Mizuno, H. Tochihara, I. Ohsaki and T. Oguchi, Surface structure of Cu(001)-c(2x2)-Mg: a tensor low energy electron diffraction analysis and a first-principles calculation, Surf. Sci., 10.1016/S0039-6028(00)00837-2, 470, 1-2, 53-61, 470, 53-61, 2000.01.
77. H. Nakane, S. Kawata, M. Oka, T. Takami, S. Mizuno, H. Adachi, On the atomic arrangement on the ZrO/W(100) cathode surface: Models for low-energy electron diffraction, J. Vac. Sci. Technol. B, 10.1116/1.590606, 17, 2, 620-622, 17, 620, 1999.01.
78. Y. Oda, S. Mizuno, S. Todo, E. Torikai and K. Hayakawa, Surface crystal structure of magnetite Fe3O4(110), Jpn. J. Appl. Phys., 10.1143/JJAP.37.4518, 37, 8, 4518-4521, 37, 4518-4521., 1998.01.
79. H. Jiang, M. Imaki, S. Mizuno and H. Tochihara, (nxn) surface-structures formed commonly on Cu(001), Ag(001) and Ni(001) by alkali-metal adsorption, Surf. Rev. Lett., 10.1142/S0218625X97001589, 4, 6, 1227-1232, 4, 1227-1232, 1997.01.
80. S. Mizuno,H. Jiang and H. Tochihara, Completion of the determination of complex surface-structures formed on low-index planes of copper single crystal by Li deposition: Cu(110)-(4x1)-3Li, Surf. Rev. Lett., 10.1142/S0218625X97001577, 4, 6, 1221-1226, 4, 1221-1226, 1997.01.
81. S. Mizuno, H. Tochihara, Y. Matsumoto and K. Tanaka, STM observation of restructured Cu(001) surfaces induced by Li deposition, Surf. Sci., 10.1016/S0039-6028(97)00646-8, 393, 1-3, L69-L76, 393, L69-L76, 1997.01.
82. H. Jiang, S. Mizuno and H. Tochihara, Adlayer structure of c(5root2 x root2)R45 formed on Ni(001) by Li adsorption: Hollow-site adsorption or hexagonal arrangement?, Surf. Sci., 10.1016/S0039-6028(97)00343-9, 385, 2-3, L930-L937, 385, L930-L937, 1997.01.
83. H. Jiang, S. Mizuno and H. Tochihara, Adsorption mode change from adlayer- to restructuring-type with increasing coverage, evidenced by structural determination of c(2x2)->(4x4)->(5x5) sequence formed on Ni(001) by Li deposition, Surf. Sci., 10.1016/S0039-6028(97)00006-X, 380, 2-3, L506-L512, 380, L506-L512, 1997.01.
84. M. Imaki, S. Mizuno and H. Tochihara, Surface structure sequences formed on Ag(001) with increasing alkali-metal coverages at room temperature, Surf. Sci., 357-358, 145-149, 1996.01.
85. H. Tochihara and S. Mizuno, Hybrid surface structures formed on Cu(001) and Ag(001) by alkali-metal adsorption, Surf. Sci., 357-358, 10-18, 1996.01.
86. S. Mizuno, H. Tochihara, A. Barbieri and M.A. Van Hove, Completion of the structural determination of and rationalization of the surface-structure sequence (2x1)->(3x3)->(4x4) formed on Cu(001) with increasing Li coverage, Phys. Rev. B, 52, R11658-R11661, 1995.01.
87. S. Mizuno, H. Tochihara, A. Barbieri and M.A. Van Hove, Honeycomb structure of adatoms surrounding substituted atoms: Cu(111)-(2x2)-3Li, Phys. Rev. B, 51, 7981-7984, 1995.01.
88. S. Mizuno, H. Tochihara, A. Barbieri and M.A. Van Hove, Complex surface alloy formed by Li deposition on Cu(001) determined by dynamical low-energy electron diffraction, Phys. Rev. B, 51, 1969-1972, 1995.01.
89. S. Nakanishi, T. Yumura, K. Umezawa, H. Tochihara and S. Mizuno, Observations of coverage- and temperature-dependent surface structures formed upon Li deposition on Cu(110)
:, Phys. Rev. B, 49, 4850-4857, 1994.01.
90. S. Mizuno, H. Tochihara and T. Kawamura, Approximate method for reducing effect of beam-misalignment on low-energy electron diffraction I(E) curves at the normal incidence: The horizontal-beam method, J. Vac. Sci. Technol. A, 12, 471-475, 1994.01.
91. S. Mizuno, H. Tochihara and T. Kawamura, Alkali-metal adsorption on dissimilar alkali-metal monolayers preadsorbed on Cu(001): Li on Na and Na on Li, Phys. Rev. B, 50, 17540-17546, 1994.01.
92. H. Jiang, K. Yoneyama, H. Minagawa, S. Mizuno, T. Kadowaki, K. Matsudaira, H. Tochihara, K. Hayakawa and M. Watanabe, Gas desorption analysis on the surface of ZnO(0001) after hydrogen ion irradiation, Jpn. J. Appl. Phys., 32, L806-L808, 1993.01.
93. S. Mizuno, H. Tochihara and T. Kawamura, Determination of the c(2x2) structure formed on Cu(001) upon Li adsorption: A low-energy electron diffraction analysis, Surf. Sci., 293, 239-245, 1993.01.
94. S. Mizuno, H. Tochihara and T. Kawamura, Missing-row-type restructuring of the Cu(001) surface induced by Li adsorption: A low-energy electron diffraction analysis, Surf. Sci., 292, L811-L816, 1993.01.
95. H. Tochihara and S. Mizuno, Geometries of Li induced structures on Cu(001): LEED and ARUPS studies, Surf. Sci., 287/288, 423-427, 1993.01.
96. H. Minagawa, R.O. Vina, T. Kadowaki, S. Mizuno, H. Tochihara, K. Hayakawa and I. Toyoshima, Compositional change of silicon carbide surface due to oxygen adsorption and heat treatment, Jpn J. Appl. Phys., 31, L1707-L1709, 1992.01.
97. M.-B. Song, S. Mizuno, K. Fukutani, and Y. Murata, UPS studies on photodesorption of NO from Pt(001), Chem. Phys. Lett., 196, 559-562, 1992.01.
98. H. Tochihara and S. Mizuno, Observation of anomalous LEED patterns from Li adsorbed Cu(001): 2x1, 3x3 and 4x4, Surf. Sci., 279, 89-98, 1992.01.
99. H. Tochihara and S. Mizuno, A coverage-dependent reaction of Li adatoms on Cu(001) with H2O, Chem. Phys. Lett., 194, 51-56, 1992.01.
100. S. Mizuno, H. Tochihara, T. Kadowaki, H. Minagawa, K. Hayakawa, I. Toyoshima and C. Oshima, Formation of a linear LiOH compound on Cu(001): Reaction of H2O with Li adatoms at low coverages, Surf. Sci., 264, 103-113, 1992.01.
101. H. Tochihara, A. Pomprasit, T. Kadowaki, S. Mizuno, H. Minagawa, K. Hayakawa and I. Toyoshima, Decomposition of the surface carbide on Ni(001) induced by copper adsorption and surface segregation of carbon, Surf. Sci., 257, L623-L627, 1991.01.
102. K. Mase, S. Mizuno, Y. Achiba and Y. Murata, Photostimulated desorption of NO on Pt(001) studied with a multiphoton ionization technique
:, Surf. Sci., 242, 444-449, 1991.01.
103. K. Mase, S. Mizuno, Y. Achiba and Y. Murata, Photostimulated desorption of NO chemisorbed on Pt(100) induced by valence electron excitation, Rev. Solid State Sci., 4, 721-732, 1991.01.
104. K. Mase, S. Mizuno, M. Yamada, I. Doi, T. Katsumi, S. Watanabe, Y. Achiba and Y. Murata, Photostimulated desorption of NO chemisorbed on Pt(100) at 193 nm, J. Chem. Phys., 91, 590-597, 1990.01.