Kyushu University Academic Staff Educational and Research Activities Database
List of Presentations
Hiroshi Nakashima Last modified date:2018.08.07

Professor / Advanced Functional Devies / Global Innovation Center / Global Innovation Center


Presentations
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3. W. C. Wen, T. Sakaguchi, K. Yamamoto, D. Wang, H. Nakashima, Evaluation of border-traps in GeO2/Ge gate stacks grown by thermal oxidation and plasma oxidation, 2018年第65回応用物理学会春季学術講演会, 2018.03, [URL].
4. @H. Nakashima # W. C. Wen @K. Yamamoto @ D. Wang, Near-interface border-traps characterization by deep-level transient spectroscopy for GeO2/Ge gate stacks, 11th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2018.02.
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8. Hiroshi Nakashima, H. Okamoto, Keisuke Yamamoto, DONG WANG, Achievement of Ultralow Contact Resistivity of Metal/n+-Ge Contacts with Zr-N-Ge Amorphous Interlayer (Invited), 232nd ECS Meeting, National Harbor, USA, 2017.10.
9. T. Sakaguchi, K. Akiyama, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Dependence of Channel Mobility on Substrate Impurity Concentration for Metal Source/Drain Ge MOSFETs, 2017 International Conference on Solid State Devices and Materials (SSDM2017), 2017.09.
10. W. -C. Wen, T. Sakaguchi, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Characterization of near-interface border-traps in GeO2/Ge gate stacks grown by low and high temperature thermal oxidation using deep-level transient spectroscopy, 2017 International Conference on Solid State Devices and Materials (SSDM2017), 2017.09.
11. W.-C. Wen, T. Sakaguchi, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Near-interface border traps characterization for GeO2/Ge gate stacks grown by low and high temperature thermal oxidation by using deep-level transient spectroscopy, 2017年秋季第78回応用物理学会学術講演会, 2017.09.
12. K. Kudo, H. Higashi, M. Nakano, S. Yamada, Keisuke Yamamoto, T. Kanashima, I. Tsunoda, Hiroshi Nakashima, K. Hamaya, Electrical properties of pseudo-single-crystalline Ge films grown on SiNx/SiO2, 10th Int. Conf. on Si Epitaxy and Heterostructures, 2017.05, [URL].
13. Wen Wei-Chen, Taisei Sakaguchi, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Near-interface border-traps characterization by deep-level transient spectroscopy for GeO2/Ge gate stacks, 10th Int. Conf. on Si Epitaxy and Heterostructures, 2017.05, [URL].
14. Takayuki Maekura, Chissato Motoyama, Kentarou Tanaka, Keisuke Yamamoto, Hiroshi Nakashima, DONG WANG, Effect of n-type doping level on direct band gap light emission intensity for asymmetric metal/Ge/metal diodes, 10th Int. Conf. on Si Epitaxy and Heterostructures, 2017.05, [URL].
15. Chisato Motoyama, Takayukuki Maekura, Kentaro Tanaka, DONG WANG, Keisuke Yamamoto, Hiroshi Nakashima, Influence of Al-PMA for fin type asymmetric metal/germanium/metal diodes, JSAP Kyushu Chapter Annual Meeting 2016, 2016.12.
16. Wei-Chen Wen, Yuta Nagatomi, ZHAO LIWEI, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, TOF-SIMS and XPS analyses for investigation of of Al post-metallization annealing effect for Ge MOS capacitors with SiO2/GeO2 bilayer passivation, JSAP Kyushu Chapter Annual Meeting 2016, 2016.12.
17. Tomoki Tateyama, Yuta Nagatomi, Shintaro Tanaka, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Achievement of low parasitic resistance in Ge n-MOSFET with embedded TiN-source/ drain structure, JSAP Kyushu Chapter Annual Meeting 2016, 2016.12.
18. Hiroshi Nakashima, Hayato Okamoto, Keisuke Yamamoto, DONG WANG, Electrical Properties of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer, JSPS MEETING 2016, 2016.11.
19. Hayato Okamoto, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer, 2016 International Conference on Solid State Devices and Materials (SSDM2016), 2016.09.
20. Kenji Kasahara, Hidemi Higashi, Mario Nakano, Yuta Nagatomi, Keisuke YAMAMOTO, Hiroshi Nakashima, Kohei Hamaya, Effect of Post Annealing on Hole mobility of Pseudo-Single-Crystalline Germanium Thin-Film-Transistors on Glass Substrates, 7th Int. Symp. on Control of Semiconductor Interfaces and Int. SiGe Technology and Device Meeting 2016, 2016.06.
21. Takeshi Kanashima, Masato Zenitaka, Keisuke YAMAMOTO, Riku Yamashiro, Hiroshi Nohira, Hiroshi Nakashima, Shinya Yamada, Kohei Hamaya, Improvement of C-V Characteristics in LaYO3/La2O3/Ge (111) MIS Structures, 7th Int. Symp. on Control of Semiconductor Interfaces and Int. SiGe Technology and Device Meeting 2016, 2016.06.
22. Keisuke YAMAMOTO, Hayato Okamoto, DONG WANG, Hiroshi Nakashima, Characterization of Ge Tunnel FET with Metal/Ge Junction, 7th Int. Symp. on Control of Semiconductor Interfaces and Int. SiGe Technology and Device Meeting 2016, 2016.06.
23. Yuta Nagatomi, Shintaro Tanaka, Tomoki Tateyama, Keisuke YAMAMOTO, DONG WANG, Hiroshi Nakashima, Mobility enhancement in Ge p-MOSFET due to introduction of Al atoms in SiO2/GeO2 gate stacks, 7th Int. Symp. on Control of Semiconductor Interfaces and Int. SiGe Technology and Device Meeting 2016, 2016.06.
24. Takayuki Maekura, Cisato Motoyama, Yamamoto Keisuke, Hiroshi Nakashima, DONG WANG, Influences of metal/Ge contact and surface passivation on direct band gap light emission and detection for asymmetric metal/Ge/metal diodes, 9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, “Atomically Controlled Processsing for Ultralarge Scale Integration”, 2016.01.
25. Yuta Nagatomi, Shintaro Tanaka, Tomoki Tateyama, Yamamoto Keisuke, DONG WANG, Hiroshi Nakashima, Mechanism of mobility enhancement in Ge p-MOSFET due to introduction of Al atoms in SiO2/GeO2 gate stacks, 9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, “Atomically Controlled Processsing for Ultralarge Scale Integration”, 2016.01.
26. Hiroshi Nakashima, Yamamoto Keisuke, DONG WANG, Electrical properties of metal-nitride/Ge contacts and the application to Ge optoelectronic devices, The 2nd International Conference & Exhibition for Nanopia, 2015.11.
27. Hiroshi Nakashima, Yamamoto Keisuke, DONG WANG, Electrical characterization of SiGe-on-insulator fabricated using Ge condensation by dry oxidation , American Vacuum Society (AVS) Shanghai Thin Film Conference, 2015.10.
28. DONG WANG, Takayuki Maekura, Yamamoto Keisuke, Hiroshi Nakashima, Direct band gap light emission and detection in lateral HfGe/Ge/TiN diodes , American Vacuum Society (AVS) Shanghai Thin Film Conference, 2015.10.
29. Hiroshi Nakashima, Yamamoto Keisuke, DONG WANG, Electrical Properties of Group 4 Metal-Nitride/Ge Contacts and the Application to Ge Optoelectronic Devices, 228th ECS Meeting, 2015.10.
30. Shintarou Tanaka, Yuta Nagatomi, Yuichi Nagaoka, Yamamoto Keisuke, DONG WANG, Hiroshi Nakashima, PtGe-Source/Drain Ge p-MOSFET with High On/Off Ratio and Low Parasitic Resistance, 2015 International Conference on Solid State Devices and Materials (SSDM2015), 2015.09.
31. Takahiro Maekura, DONG WANG, Yamamoto Keisuke, Hiroshi Nakashima, Influences of Metal/Ge Contact and Surface Passivation on Light Emission and Detection for Asymmetric Metal/Ge/Metal Diodes, 2015 International Conference on Solid State Devices and Materiaals (SSDM2015), 2015.09.
32. DONG WANG, Takayuki Maekura, Yamamoto Keisuke, Hiroshi Nakashima, Direct-bandgap light emission and detection at room temperature in bulk-Ge diodes with HfGe/Ge/TiN structure
, 9th Int. Conf. on Si Epitaxy and Heterostructures, 2015.05.
33. Yamamoto Keisuke, Ryutarou Noguchi, Mitsuhara Masatoshi, Minoru Nishida, Toru Hara, DONG WANG, Hiroshi Nakashima, Barrier Height Modulation for Metal/Ge Contacts with Nitrogen-Contained Amorphous Interlayers, 9th Int. Conf. on Si Epitaxy and Heterostructures, 2015.05.
34. Hiroshi Nakashima, Yamamoto Keisuke, DONG WANG, Mitsuhara Masatoshi, Ryutarou Noguchi, Keisuke Hiidome, Minoru Nishida, Contact Formation for Metal Source/Drain Ge-CMOS , 9th Int. Conf. on Si Epitaxy and Heterostructures, 2015.05.
35. Yuta Nagatomi, Yuichi Nagaoka, Shintaro Tanaka, Yamamoto Keisuke, DONG WANG, Hiroshi Nakashima, Effect of Al Post Metallization Annealing on Al2O3/GeO2/Ge Gate Stack, 8th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar ,“Atomically Controlled Processsing for Ultralarge Scale Integration”, 2015.01.
36. Yamamoto Keisuke, Ryutaro Noguchi, Mitsuhara Masatoshi, Minoru Nishida, Toru Hara, Hiroshi Nakashima, Electrical Properties of Metal/Ge Contacts with Nitrogen-Contained Amorphous Interlayers , 8th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, “Atomically Controlled Processsing for Ultralarge Scale Integration”, 2015.01.
37. Hiroshi Nakashima, Yamamoto Keisuke, DONG WANG, Mitsuhara Masatoshi, Ryutaro Noguchi, Keisuke Hiidome, Minoru Nishida, Contact properties of group IV metal-nitrides (TiN, ZrN, HfN) on Ge, JSPS Core-to-Core Program, “Atomically Controlled Processsing for Ultralarge Scale Integration”, 2014.11.
38. Yuta Nagatomi, Yuichi Nagaoka, Yamamoto Keisuke, DONG WANG, Hiroshi Nakashima, Investigation of Al-PMA Effect on Al2O3/GeOx/Ge Gate Stack, 226th ECS Meeting, 2014.10.
39. Yuta Nagatomi, Yuichi Nagaoka, Yamamoto Keisuke, DONG WANG, Hiroshi Nakashima, Effect of Kr/O2 ECR Plasma Oxidation on Electrical Properties of Al2O3/Ge Gate Stacked Fabricated by ALD, 2014 International Conference on Solid State Devices and Materials(SSDM2014), 2014.09.
40. DONG WANG, Syo Kamezawa, Yamamoto Keisuke, Hiroshi Nakashima, Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric metal/germanium/metal structure, 7th International Silicon-Germanium Technology and Device Meeting, 2014.06.
41. Yamamoto Keisuke, DONG WANG, Hiroshi Nakashima, Fermi Level Pinning Alleviation at the TiN, ZrN, and HfN/Ge Interfaces, 7th International Silicon-Germanium Technology and Device Meeting, 2014.06.
42. Yamamoto Keisuke, DONG WANG, Hiroshi Nakashima, Fabrication of Metal-Nitride/Ge Contacts with Extremely Low Electron Barrier Height and Its Clarification of the Physical Origin
, 7th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, 2014.01.
43. Hiroshi Nakashima, Yamamoto Keisuke, DONG WANG, Fabrication of Ge MOS and Ge Light Emitting Devices Using Contacts with Low Electron and Hole Barrier Heights , 7th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, “Atomically Controlled Processsing for Ultralarge Scale Integration”, 2014.01.
44. Yamamoto Keisuke, Koichiro Asakawa, DONG WANG, Hiroshi Nakashima, Fabrication of Metal-Nitride/Si Contacts with Low Electron Barrier Height, 224th ECS Meeting, 2013.10.
45. Hiroshi Nakashima, Yamamoto Keisuke, DONG WANG, Development of Metal Source/Drain Ge-CMOS Using TiN/Ge and HfGe/Ge Contacts , 224th ECS Meeting, 2013.10.
46. Yamamoto Keisuke, Takahiro Sada, DONG WANG, Hiroshi Nakashima, Metal Source/Drain Ge p-MOSFET with HfGe/Ge Contact, 8th Int. Conf. on Si Epitaxy and Heterostructures & 6th Int. Symp. on Control of Semiconductor Interfaces, 2013.06.
47. Yamamoto Keisuke, Kojiro Asakawa, DONG WANG, Hiroshi Nakashima, Fabrication of TiN/Si Contact with Low Electron Barrier Height and Its Application to Back-Gate MOSFET, 8th Int. Conf. on Si Epitaxy and Heterostructures & 6th Int. Symp. on Control of Semiconductor Interfaces, 2013.06.
48. Kota Hatayama, Yamamoto Keisuke, DONG WANG, Hiroshi Nakashima, Low temperature fabrication of Ohmic contact for p-type 4H-SiC using Al/Ti/Sn, 8th Int. Conf. on Si Epitaxy and Heterostructures & 6th Int. Symp. on Control of Semiconductor Interfaces, 2013.06.
49. DONG WANG, Yuta Nagatomi, Syuta Kojima, Syo Kamezawa, Yamamoto Keisuke, Hiroshi Nakashima, An accurate characterization of metal-insulator-semiconductor interface-state by deep-level transient spectroscopy and its application on Y2O3/Ge gate stacks with ultrathin GeOx interlayer, 8th Int. Conf. on Si Epitaxy and Heterostructures & 6th Int. Symp. on Control of Semiconductor Interfaces, 2013.06.