Kyushu University Academic Staff Educational and Research Activities Database
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Hiroshi Nakashima Last modified date:2018.08.07

Professor / Advanced Functional Devies
Global Innovation Center
Global Innovation Center


Graduate School
Administration Post
Director of the Global Innovation Center


E-Mail
Homepage
http://gic.kyushu-u.ac.jp/nakasima/naka_home.htm
http://gic.kyushu-u.ac.jp/
Phone
092-583-7872
Fax
092-573-8729
Academic Degree
PHD Engineering
Field of Specialization
Electronic Materials Engineering, Semiconductor Materials Engineering
Research
Research Interests
  • Research and development for 3C-SiC device
    keyword : High temperature operation, 3C-SiC, wide gap semiconductor
    2012.04.
  • Research and development for Ge-light emitting device and Ge-Photo detector
    keyword : optical communication, light connection, light emission, phot0 detection, asymmetric metal/Ge/metal structure
    2012.04.
  • Strained Ge Technology
    keyword : strained-Ge, strained-SiGe, MOSFET, Back-Gate MOSFET、mobility Enhancement, Interface State Density, Ge condensation by Dry Oxidation, Local Ge condensation by Dry Oxidation
    2009.10~2012.03.
  • Research and development for Ge-CMOS devices
    keyword : Ge channel, Ge On Insulator, high-k/Ge, Metal Gate, Metal S-D
    2007.04.
  • Strained Si Technology
    keyword : strained-Si, SiGe, SOI, MOS, minority carrier generation lifetime, DLTS, Interface State, Photoluminescence
    2002.10~2011.03.
  • Evaluation technique for crystal semiconductor thin film on insulator
    keyword : SOI, SGOI, DLTS, photoluminescence
    1994.04.
  • Control of heavy metal impurities in Si wafer
    keyword : solar cell, Si wafer, heavy metal impurity, gettering, DLTS
    1980.03~2006.03.
Academic Activities
Papers
1. H. Higashi, K. Kudo, K. Yamamoto, S. Yamada, T. Kanashima, I. Tsunoda, H. Nakashima, and K. Hamaya, Electrical properties of pseudo-single-crystalline Ge films grown by Au-induced layer exchange crystallization at 250 °C, J. Appl. Phys., 123, 2, 215704-1-7, 2018.06.
2. H. Higashi, M. Nakano, K. Kudo,Y. Fujita, S. Yamada, T. Kanashima, I. Tsunoda, H. Nakashima,K. Hamaya, A crystalline germanium flexible thin-film transistor, Appl. Phys. Lett., 111, 22, 222105-1-222105-5, 2018.04.
3. Hiroshi Nakashima, H. Okamoto, Keisuke Yamamoto, DONG WANG, Achievement of Ultralow Contact Resistivity of Metal/n+-Ge Contacts with Zr-N-Ge Amorphous Interlayer (Invited), The Electrochemical Society Transactions, 80, 4, 97-106, 2017.10.
4. T. Maekura, K. Tanaka, C. Motoyama, R. Yoneda, Keisuke Yamamoto, Hiroshi Nakashima, DONG WANG, Effect of n-type doping level on direct band gap electroluminescence intensity for asymmetric metal/Ge/metal diodes, Semicond. Sci. Technol, http://dx.doi.org/10.1088/1361-6641/32/10/104001, 32, 10, 104001-6, 2017.08.
5. Yuta Nagatomi, Tomoki Tateyama, Sintaro Tanaka, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Achievement of low parasitic resistance in Ge n-channel metal-oxide-semiconductor field-effect transistor using embedded TiN-source/drain structure, Semicond. Sci. Technol., http://dx.doi.org/10.1088/1361-6641/32/3/035001, 32, 3, 035001-8, 2017.01.
6. Yuta Nagatomi, Tomoki Tateyama, Sintaro Tanaka, Wei-Chen Wen, Taisei Sakaguchi, Keisuke Yamamoto, ZHAO LIWEI, DONG WANG, Hiroshi Nakashima, Mechanism of mobility enhancement in Ge p-channel metal-oxide-semiconductor field-effect transistor due to introduction of Al atoms into SiO2/GeO2 gate stack, Materials Science in Semiconductor Processing, 10.1016/j.mssp.2016.11.014, 70, 246-253, 2017.08.
7. Keisuke Yamamoto, Hayato Okamoto, DONG WANG, Hiroshi Nakashima, Fabrication of asymmetric Ge Schottky tunneling source n-channel field-effect transistor and its characterization of tunneling conduction, Materials Science in Semiconductor Processing, 10.1016/j.mssp.2016.09.024, 70, 283-287, 2017.08.
8. Takayuki Maekura, Yamamoto Keisuke, Hiroshi Nakashima, DONG WANG, Effects of metal/Ge contact and surface passivation on direct band gap light emission and detection for asymmetric metal/Ge/metal diodes, Jpn. J. Appl. Phys., 10.7567/JJAP.55.04EH08, Vol. 55, No. 4S, pp. 04EH08-1-6, 2016.04.
9. DONG WANG, Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima, Direct band gap light emission and detection at room temperature in bulk germanium diodes with HfGe/Ge/TiN structure, Thin Solid Films, 10.1016/j.tsf.2015.09.074, 602, 43-47, Vol. 602, pp. 43-47 , 2016.04.
10. Hiroshi Nakashima, Yamamoto Keisuke, DONG WANG, Electrical Properties of Group 4 Metal-Nitride/Ge Contacts and the Application to Ge Optoelectronic Devices , The Electrochemical Society Transactions, 10.1149/06910.0055ecst, Vol. 69, No. 10, pp. 55-66, 2015.10.
11. Kenji Kasahara, Yuta Nagatomi, Yamamoto Keisuke, Hidemi Higashi, Mario Nakano, Sinya Yamada, DONG WANG, Hiroshi Nakashima, Kouhei Hamaya, Electrical properties of pseudo-single-crystalline germanium thin-film-transistor fabricated on glass substrates, Appl. Phys. Lett., 10.1063/1.4932376, Vol. 107, No. 14, pp. 142102-1-5, 2015.10.
12. Yamamoto Keisuke, Ryutaro Noguchi, Mitsuhara Masatoshi, Minoru Nishida, Toru Hara, DONG WANG, Hiroshi Nakashima, Electrical and structural properties of group-4 transition-metal nitride (TiN, ZrN, and HfN) contacts on Ge, J. Appl. Phys., 10.10631/1.4930573, Vol. 118, No. 11, pp. 115701-1-12, 2015.09.
13. Yuta Nagatomi, Shintaro Tanaka, Yuichi Nagaoka, Yamamoto Keisuke, DONG WANG, Hiroshi Nakashima, Fabrication of PtGe/Ge contacts with high on/off ratio and its application to metal source/drain Ge p-channel MOSFETs , Jpn. J. Appl. Phys., 10.7567/JJAP.54.070306, Vol. 54, No. 7, pp. 070306-1-4 , 2015.06.
14. DONG WANG, Takahiro Maekura, Sho Kamezawa, Yamamoto Keisuke, Hiroshi Nakashima, Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric fin type metal/germanium/metal structure, Appl. Phys. Lett., 10.1063/1.4913261, Vol. 106, No.07, pp. 071102-1-4, 2015.02.
15. Yuta Nagatomi, Yuichi Nagaoka, Yamamoto Keisuke, DONG WANG, Hiroshi Nakashima, Investigation of Al-PMA Effect on Al2O3/GeOx/Ge Gate Stack, The Electrochemical Society Transactions, 10.1149/06406.0261ecst, Vol. 64, No.6, pp. 261-266, 2014.10.
16. DONG WANG, Yuta Nagatomi, Suta Kojima, Yamamoto Keisuke, Hiroshi Nakashima, Low-temperature fabrication of Y2O3//Ge gate stacks with ultrathin GeOx interlayer and low interface states density characterized by a reliable deep-level transient spectroscopy method, Thin Solid Films, 10.1016/j.tsf.2013.10.065, 288-291, Vol. 557, pp. 288-291, 2014.04.
17. Yamamoto Keisuke, Mitsuhara Masatoshi, Keisuke Hiidome, Ryutaro Noguchi, Minoru Nishida, DONG WANG, Hiroshi Nakashima, Role of an interlayer at a TiN/Ge contact to alleviate the intrinsic Fermi-level pinning position towrd the conduction band edge, Appl.Phys.Lett., 10.1063/1.4870510, Vol. 104, No. 13, pp. 132109-1-3, 2014.04.
18. Hiroshi Nakashima, Yamamoto Keisuke, DONG WANG, Development of Metal Source/Drain Ge-CMOS Using TiN/Ge and HfGe/Ge Contacts, The Electrochemical Society Transactions, 10.1149/05809.0167, Vol. 58, No.9, pp. 167-178, 2013.10.
19. Yamamoto Keisuke, Takahiro Sada, DONG WANG, Hiroshi Nakashima, Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO2/GeO2gate stack, Appl. Phys. Lett., 10.1063/1.4821546, Vol. 103, No.12, pp. 122106-1-3, 2013.09.
20. H. Nakashima, K. Yamamoto, H. Yang, and D. Wang, Gate Stack and Source/Drain Junction Formations for High-Mobility Ge MOSFETs, The Electrochemical Society Transactions, Vol. 50, No.9, pp.205-216, 2012.10.
21. D. Wang, S. Kojima, K. Sakamoto, K. Yamamoto and H. Nakashima, An accurate characterization of interface-state by deep-level transient spectroscopy for Ge metal-insulator-semiconductor capacitors with SiO2/GeO2 bilayer passivation
, J. Appl. Phys., 10.1063/1.4759139, Vol. 112, No. 8, pp. 083707-1-5, 2012.10.
22. K. Yamamoto, K. Harada, H. Yang, D. Wang, H. Nakashima, Fabrication of TiN/Ge Contact with Extremely Low Electron Barrier Height , Jpn. J. Appl. Phys., 10.1143/JJAP.51.070208, Vol. 51, No. 7, pp. 070208-1-3 , 2012.07.
23. K. Yamamoto, T. Yamanaka, K. Harada, T. Sada, K. Sakamoto, S. Kojima, H. Yang, D. Wang, H. Nakashima, Schottky Source/Drain Ge Metal-Oxide-Semiconductor Field-Effect Transistors with Directly Contacted TiN/Ge and HfGe/Ge Structures, Appl. Phys. Express, 10.1143/APEX.5.051301, Vol. 5, No. 5, 051301-1-3 , 2012.05.
24. H. Yang, D. Wang, H. Nakashima, Influence of SiGe layer thickness and Ge fraction on compressive strain and hole mobility in a SiGe-on-insulator substrate fabricated by the Ge condensation technique, Thin Solid Films, 10.1016/j.tsf.2011.10.078, Vol. 520, No. 8, pp. 3283-3287 , 2012.02.
25. H. Yang, D. Wang, H. Nakashima, Significant Improvement of SiO2/4H-SiC Interface Properties Using Electron Cyclotron Resonance Nitrogen Plasma Irradiation, J. Electrochem. Soc., 10.1149/2.003201jes, Vol. 159, No. 1, pp. H1-H4 , 2012.01.
26. D. Wang, K. Yamamoto, Hongye, H. Yang, H. Nakashima, Defect Evaluation by Photoluminescence for Uniaxially Strained Si-On-Insulator, J. Electrochem.Soc., 10.1149/2.037112jes, Vol. 158, No. 12, pp. H1221-H1224   , 2011.11.
27. H. Nakashima, Y. Iwamura, K. Sakamoto, D. Wang, K. Hirayama, K. Yamamoto, H. Yang, Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2/GeO2 bilayer passivation, Applied Physics Letters, 10.1063/1.3601480, Vol. 98, No. 25, pp. 252102-1-3, 2011.06.
28. M. Iyota, K. Yamamoto, D. Wang, H.Yang, and H. Nakashima, Ohmic contact formation on n-type Ge by direct deposition of TiN, Applied Physics Letters, 10.1063/1.3590711, Vol. 98, No. 19, pp. 192108-1-3, 2011.05.
29. K. Hirayama, R. Ueno, Y. Iwamura, K. Yoshino, D. Wang, H. Yang, H. Nakashima, Fabrication of Ge Metal–Oxide–Semiconductor Capacitors with High-Quality Interface by Ultrathin SiO2/GeO2 Bilayer Passivation and Postmetallization Annealing Effect of Al, Jpn. J. Appl. Phys. , Vol. 50, pp. 04DA10-1-5, 2011.04.
30. K. Yamamoto, R. Ueno, T. Yamanaka, K. Hirayama, H. Yang, D. Wang, H. Nakashima, High-Performance Ge Metal–Oxide–Semiconductor Field-Effect Transistors with a Gate Stack Fabricated by Ultrathin SiO2/GeO2 Bilayer Passivation, Appl. Phys. Express, 10.1143/APEX.4.051301 , Vol.4, No.5, 051301-1-3, 2011.04.
31. K. Hirayama, K. Yoshino, R.Ueno, Y. Iwamura, H. Yang, D. Wang, H. Nakashima, Fabrication of Ge-MOS capacitors with high quality interface by ultra-thin SiO2/GeO2 bi-layer passivation combined with the subsequent SiO2-depositions using magnetron sputtering, Solid State Electronics, 10.1016/j.sse.2011.01.030, Vol. 60, No.1, pp. 122-127, 2011.02.
32. H. Yang, M. Iyota, S. Ikeura, D. Wang, H. Nakashima, Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al2O3 deposition and subsequent post-annealing, Solid State Electronics, 10.1016/j.sse.2011.01.031, Vol. 60, No.1, pp. 128-133, 2011.02.
33. H. Yang, M. Iyota, S. Ikeura, D. Wang, H. Nakashima, Passivation of Electrically Active Defects in Ge-Rich SiGe-on-Insulator by Al2O3 Deposition and Subsequent Post-Deposition Annealing, Appl. Phys. Express, 10.1143/APEX.3.071302, Vol.3, No.7, 071302-1-3, 2010.07.
34. D. Wang, H. Yang, T. Kitamura, H. Nakashima, Influence of freely diffusing excitons on the photoluminescence spectrum of Si thick films with depth distribution of strain, J. Appl. Phys., Vol. 107, No. 3, pp. 033511-1-5 , 2010.02.
35. H. Yang, D. Wang, H. Nakashima, K. Hirayama, S.Kojima, S. Ikeura, Defect control by Al-deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions, Thin Solid Films, Vol. 518, pp. 2342-2345 , 2010.02.
36. D. Wang, H. Yang, T. Kitamura, H. Nakashima, 325 nm-laser-excited micro-photoluminescence for strained Si films, Thin Solid Films, Vol. 518, pp. 2470-2473, 2010.02.
37. K. Hirayama, W. Kira, K. Yoshino, H. Yang, D. Wang, H. Nakashima, Electrical characterization of High-k Gate Dielectrics on Ge with HfGeN and GeO2 interlayers, Thin Solid Films, Vol. 518, pp. 2505-2508, 2010.02.
38. H. Nakashima, D. Wang and  H. Yang, Optical and Electrical Characterization of Defects in SiGe-On-Insulator, The Electochemical Society Transactions, Vol. 25, No. 7, pp. 99-114, 2009.10.
39. H. Yang, D. Wang, H. Nakashima, Evidence for existence of deep acceptor levels in SiGe-on-insulator substrate fabricated using Ge condensation technique, Applied Physics Letters, Vol.95, No.12, pp.122103-1-3, 2009.09.
40. D. Wang and H. Nakashima, Optical and electrical evaluations of SiGe layers on insulator fabricated using Ge condensation by dry oxidation, Solid-State Electronics, Vol. 53, No. 8, pp. 841-849, 2009.08.
41. H. Nakashima, D. Wang, Y. Sugimoto, Y. Suehiro, K.Yamamoto, M. Kajiwara, K. Hirayama , Electrical and structural evaluations of high-k gate dielectrics fabricated using plasma oxidation and the subsequent annealing for a Hf/SiO2/Si structure, Semicond. Sci. Technol. , Vol. 23, No. 12, pp. 125020-1-6, 2008.12.
42. H. Yang, D. Wang, H. Nakashima, H. Gao, K. Hirayama, K. Ikeda, S. Hata, and H. Nakashima , Influence of top surface passivation on bottom-channel hole mobility of ultrathin SiGe- and Ge-on-insulator, Applied Physics Letters, Vol.93, No.7, pp.072104-1-3, 2008.08.
43. D. Wang, H. Nakashima, J. Morioka and T. Kitamura, Microphotoluminescence evaluation of local strain for freestanding Si membranes with SiN deposition, Applied Physics Letters, Vol. 91, No. 24,pp.241918-1-3, 2007.12.
44. Y. Sugimoto, M. Kajiwara, K. Yamamoto, Y. Suehiro, D. Wang and H. Nakashima, Effective work function modulation of TaN metal gate on HfO2 after postmetallization annealing, Applied Physics Letters, Vol. 91, No. 11,pp.112105-1-3, 2007.09.
45. Y. Sugimoto, K.Yamamoto, and H. Nakashima, Electrical and Structural Properties of TaN Gate Electrodes Fabricated by Wet Etching Using NH4OH/H2O2 Solution and HF Metal Hard Mask, Jpn. J. Appl. Phys, Vol 46, No. 9, pp. L211-L214, 2007.02.
46. Y. Sugimoto, H. Adachi, K.Yamamoto, D. Wang, H. Nakashima, H. Nakashima, Electrical characterization of high-k gate dielectrics fabricated using plasma oxidation and post-deposition annealing of a Hf/SiO2/Si structure, Materials Science in Semiconductor Processing, No.9, pp1031-1036, 2006.11.
47. H. Nakashima, M. Miyao, M. Nakamae,T. Asano, Development of Strained Si-SiGe-on-Insulator Wafers for High Speed ULSI, The 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2006), Proceeding of 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2006), Part1of 3, pp.100-103, 2006.10.
48. D. Wang, S. Ii, H. Nakashima, K. Ikeda, H. Nakashima, K. Matsumomoto, M. Nakamae, Photoluminescence evaluation of defects generated during SiGe-on-insulator virtual substrate fabrication: Temperature ramping process, Applied Physics Letters, Vol.89, No. 4, pp.041916-1-3, 2006.07.
49. D. Wang, A. Ueda, H. Takada, H. Nakashima, Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurements, Physica B, Vol. 376-377, pp. 411-415, 2006.04.
50. T. Terakawa, D. Wang, and H. Nakashima, Role of Heavily B-doped Layer on Low-Temperature Fe Gettering in Bifacial Si Solar Cell Fabrication, Jpn. J. Appl. Phys., Vol. 45, No. 4A, pp. 2643-2647, 2006.04.
51. D. Wang, S. Ii, K. Ikeda, H. Nakashima, M. Ninomiya, M. Nakamae, H. Nakashima, Structural and electrical evaluation for strained Si/SiGe on insulator, Thin Solid Films, Vol. 508, pp. 107-111, 2006.04.
52. D. Wang, K. Matsumoto, M. Nakanae and H. Nakashima, Photoluminescence characterization of strained Si-SiGe-on-Insulator wafers with different Ge fractions, Applied Physics Letters, 10.1063/1.2152109, 87, 25, Vol. 87 No. 25, pp. 251928-1-3, 2005.12.
53. Y. Sugimoto, N. Takata, T. Hirota, K. Ikeda, F. Yoshida, H. Nakashima, H. Nakashima, Low-Temperature Fabrication of Polycrystalline Si Thin Film Using Al-Induced
Crystallization without Native Al Oxide at Amorphous Si/Al Interface, Jpn. J. Appl. Phys., 10.1143/JJAP.44.4770, 44, 7A, 4770-4775, Vol. 44, No. 7A, pp. 4770-4775, 2005.07.
54. D. Wang, H. Nakashima, M. Ninomiya, M. Nakamae, Electrical characterization of Strained Si/SiGe Wafers using transient capacitance mesurements, Applied Physics Letters, 10.1063/1.1891303, 86, 12, Vol. 86 No. 12, pp. 122111-1-3, 2005.03.
55. H. Nakashima, M. Nakamae, M. Miyao, H. Okushi, T. Asano and H. Hagino, Development of Strained Silicon Wafer for Next Generation ULSI, 2004 Asia-Pacific Workshop on Fundamental and Application of Advanced Semicondutor Devices, pp. 75-80, 2004.06.
56. H. Nakashima, D. Wang, T. Noguchi, K. Itani, J. Wang and L. Zhao, Method for Detecting in Silicon-On-Insulator Using Capacitance Transient Spectroscopy, Jpn. J. Appl. Phys., Vol. 43, No. 5A, pp. 2402-2408, 2004.05.
57. L. Zhao, N. H. Luu, D. Wang, Y. Sugimoto, K. Ikeda, H. Nakashima and H. Nakashima, Low-Temperature Growth of Thin Silicon Nitride Film by Electron Cyclotron Resonance Plasma Irradiation, Jpn. J. Appl. Phys., 10.1143/JJAP.43.L47, 43, 1A-B, L47-L49, Vol. 43, No. 1A/B, 2004, pp. L 47-L 49, 2003.12.
58. J. L. Wang, L. Zhao, N. H. Luu, K. Makiyama, D. Wang and H. Nakashima, Growth Kinetics and Electrical Properties of Ultrathin Si Oxide Film Fabricated Using Krypton-Diluted Oxygen Plasma Excited by Electron Cyclotron Resonance, Jpn. J. Appl. Phys., 10.1143/JJAP.42.6496, 42, 10, 6496-6501, Vol. 42, No. 10, pp. 6496-6501, 2003.10.
59. T. Joge, I. Araki, T. Uematsu, T. Warabisako, H. Nakashima and K. Matsukuma, Low-Temperature Boron Gettering for Improving the Carrier Lifetime in Fe-Contaminated Bifacial Silicon Solar Cells with n+pp+ Back-Surface-Field Structure, Jpn. J. Appl. Phys., 10.1143/JJAP.42.5397, 42, 9A, 5397-5404, Vol. 42, No. 9A, pp.5397-5404, 2003.09.
60. S. Matsuo, M. Yamamoto, T. Sadoh, T. Tsurushima, D. W. Gao, K. Furukawa and H. Nakashima, Effects of Ion Irradiation on Silicon Oxidation in Electron Cyclotron Resonance Argon and Oxygen Mixed Plasma, J. Appl. Phys., 10.1063/1.373868, 88, 3, 1664-1669, Vol. 88, No. 3, pp. 1664-1669, 2000.08.
61. J. S. Gao, H. Nakashima, J. L. Wang, K. Iwanaga, H. Nakashima, K. Ikeda, K. Furukawa and K. Muraoka, Optimum Discharge Condition of DC Bias Electron Cyclotron Resonance Plasma
Sputtering for High Quality Si Epitaxial, Jpn. J. Appl. Phys., 10.1143/JJAP.39.2834, 39, 5A, 2834-2838, Vol. 39, No. 5A, pp. 2834-2838, 2000.05.
62. J. S. Gao, H. Nakashima, N. Sakai, D. W. Gao, J. L. Wang, K. Furukawa, K. Muraoka, Growth of Epitaxial Silicon Film at Low Temperature by Using Sputtering-type
Electron Cyclotron Resonance Plasma, Jpn. J. Appl. Phys., 10.1143/JJAP.38.L220, 38, 3A, L220-L222, Vol. 38, No. 3A, pp. L220-L222, 1999.03.
63. D. W. Gao, Y. Kashiwazaki, K. Muraoka, H. Nakashima, K. Furukawa, Y. C. Liu, K. Shibata, T. Tsurushima, Effect of Preoxidation on Deposition of Thin Gate-quality Silicon Oxide Film at Low Temperature by using a Sputter-type Electron Cyclotron Resonance Plasma, J. Appl. Phys., 10.1063/1.366431, 82, 11, 5680-5685, Vol. 82, No. 11, pp. 5680-5685, 1997.12.
64. S. Zhao, A. L. Smith, S. H. Ahn, G. J. Norga, M. T. Platero, H. Nakashima, L. V. C. Assali, J. Michel, L. C. Kimerling, Iron in p-type Silicon: A Comprehensive Model, Proc. 19th Int. Conf. Defects in Semiconductors, 258-2, 429-436, ( Materials Science Forum, Vols. 258-263, Trans. Tech. publ.), pp. 429-436, 1997.12.
65. H. Nakashima, K. Furukawa, Y. C. Liu, D. W. Gao, Y. Kashiwazaki, K. Muraoka, K. Shibata, and T. Tsurushima, Low-temperature Deposition of High-Quality Silicon Dioxide Films by Sputtering-type Electron Cyclotron Resonance Plasma, J. Vac. Sci. and Tech. A, 10.1116/1.580664, 15, 4, 1951-1954, Vol. 15, No. 4, pp. 1951-1954, 1997.08.
66. S. Sakauchi, M. Suezawa, K. Sumino, H. Nakashima, Recombination-Enhanced Fe Atom Jump between the First and the Second Neighbor Site of Fe-acceptor Pair in Si, J. Appl. Phys., 10.1063/1.363695, 80, 11, 6198-6203, Vol. 80, No. 11, pp. 6198-6203, 1996.12.
67. H. Nakashima, T. Sadoh, T. Tsurushima, Electrical and Thermal Properties of Structurally Metastable Iron-Boron Pairs in Silicon, Phys. Rev. B, 10.1103/PhysRevB.49.16983, 49, 24, 16983-16993, Vol. 49, No. 24, pp. 16983—16993, 1994.06.
68. H. Nakashima, T. Sadoh, H. Kitagawa, K. Hashimoto, Diffusion and Electrical Properties of 3d Transition-Metal Impurity Series in Silicon, Proc. 17th Int. Conf. Defects in Semiconductors, 143-, 761-765, ( Materials Science Forum, Vols. 143-147, Trans. Tech. publ.), pp. 761-766, 1994.01.
69. H. Nakashima, T. Sadoh, T. Tsurushima, Hole Traps of Metastable Iron-Boron Pairs in Silicon, J. Appl. Phys., 10.1063/1.353056, 73, 6, 2803-2808, Vol. 73, No. 6, pp. 2803-2808, 1993.03.
70. T. Sadoh, H. Nakashima, T. Tsurushima, Deep Levels of Vanadium and Vanadium-Hydrogen Complex in Silicon, J. Appl. Phys., 10.1063/1.352353, 72, 2, 520-524, Vol. 72, No. 2, pp. 520-524, 1992.07.
71. T. Sadoh, H. Nakashima, Diffusion of Vanadium in Silicon, Appl. Phys. Lett., 10.1063/1.105154, 58, 15, 1653-1655, Vol. 58, No. 15, pp. 1653-1655, 1991.04.
72. H. Nakashima, K. Hashimoto, Method for Estimating Accurate Deep-Trap Densities from DLTS of Junctions Containing Several Kinds of Deep-Traps, Jpn. J. Appl. Phys., 10.1143/JJAP.28.1402, 28, 8, 1402-1406, Vol. 28, No. 8, pp. 1402-1406, 1989.08.
73. T. Isobe, H. Nakashima, K. Hashimoto, Diffusion Coefficient of Interstitial Iron in Silicon, Jpn. J. Appl. Phys., 10.1143/JJAP.28.1282, 28, 7, 1282-1283, Vol. 28, No. 7, pp. 1282-1283, 1989.07.
74. H. Nakashima, T. Isobe, Y. Yamamoto, K. Hashimoto, Diffusion Coefficient of Iron in Silicon at Room Temperature, Jpn. J. Appl. Phys., 10.1143/JJAP.27.1542, 27, 8, 1542-1543, Vol. 27, No. 8, pp. 1542-1543, 1988.08.
75. H. Nakashima, T. Miyagawa, S. Sugitani, K. Hashimoto, Method of Analysis of a Single-Peak DLTS spectrum with Two Overlapping Deep-trap Responses, Jpn. J. Appl. Phys., 10.1143/JJAP.25.205, 25, 2, 205-208, Vol. 25, No. 2, pp. 205-208, 1986.02.
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