Kyushu University Academic Staff Educational and Research Activities Database
List of Papers
Hiroshi Nakashima Last modified date:2018.08.07

Professor / Advanced Functional Devies / Global Innovation Center / Global Innovation Center


Papers
1. H. Higashi, K. Kudo, K. Yamamoto, S. Yamada, T. Kanashima, I. Tsunoda, H. Nakashima, and K. Hamaya, Electrical properties of pseudo-single-crystalline Ge films grown by Au-induced layer exchange crystallization at 250 °C, J. Appl. Phys., 123, 2, 215704-1-7, 2018.06.
2. A. S. Aji, M. Izumoto, K. Suenaga, K. Yamamoto, H. Nakashima, H. Ago, Two-step synthesis and characterization of vertically stacked SnS-WS2 and SnS-MoS2 p-n heterojunctions, Phys. Chem. Chem. Phys., 20, 2, 889-897, 2018.04.
3. H. Higashi, M. Nakano, K. Kudo,Y. Fujita, S. Yamada, T. Kanashima, I. Tsunoda, H. Nakashima,K. Hamaya, A crystalline germanium flexible thin-film transistor, Appl. Phys. Lett., 111, 22, 222105-1-222105-5, 2018.04.
4. Hiroshi Nakashima, H. Okamoto, Keisuke Yamamoto, DONG WANG, Achievement of Ultralow Contact Resistivity of Metal/n+-Ge Contacts with Zr-N-Ge Amorphous Interlayer (Invited), The Electrochemical Society Transactions, 80, 4, 97-106, 2017.10.
5. T. Sakaguchi, K. Akiyama, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Dependence of Channel Mobility on Substrate Impurity Concentration for Metal Source/Drain Ge MOSFETs , Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials (SSDM2017), 529-530, 2017.09.
6. W. -C. Wen, T. Sakaguchi, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Characterization of near-interface border-traps in GeO2/Ge gate stacks grown by low and high temperature thermal oxidation using deep-level transient spectroscopy, Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials (SSDM2017), 505-506, 2017.09.
7. T. Maekura, K. Tanaka, C. Motoyama, R. Yoneda, Keisuke Yamamoto, Hiroshi Nakashima, DONG WANG, Effect of n-type doping level on direct band gap electroluminescence intensity for asymmetric metal/Ge/metal diodes, Semicond. Sci. Technol, http://dx.doi.org/10.1088/1361-6641/32/10/104001, 32, 10, 104001-6, 2017.08.
8. Yuta Nagatomi, Tomoki Tateyama, Sintaro Tanaka, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Achievement of low parasitic resistance in Ge n-channel metal-oxide-semiconductor field-effect transistor using embedded TiN-source/drain structure, Semicond. Sci. Technol., http://dx.doi.org/10.1088/1361-6641/32/3/035001, 32, 3, 035001-8, 2017.01.
9. Yuta Nagatomi, Tomoki Tateyama, Sintaro Tanaka, Wei-Chen Wen, Taisei Sakaguchi, Keisuke Yamamoto, ZHAO LIWEI, DONG WANG, Hiroshi Nakashima, Mechanism of mobility enhancement in Ge p-channel metal-oxide-semiconductor field-effect transistor due to introduction of Al atoms into SiO2/GeO2 gate stack, Materials Science in Semiconductor Processing, 10.1016/j.mssp.2016.11.014, 70, 246-253, 2017.08.
10. T. Kanashima, R. Yamashiro, M. Zenitaka, Keisuke Yamamoto, DONG WANG, J. Tadano, S. Yamada, H. Nohira, Hiroshi Nakashima, K. Hamaya, Electrical properties of epitaxial Lu- or Y-doped La2O3/ La2O3/Ge high-k gate-stacks, Materials Science in Semiconductor Processing, 10.1016/j.mssp.2016.11.016, 70, 260-264, 2017.08.
11. Hayato Okamoto, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer, Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials (SSDM2016), 643-644, 2016.09.
12. Keisuke Yamamoto, Hayato Okamoto, DONG WANG, Hiroshi Nakashima, Fabrication of asymmetric Ge Schottky tunneling source n-channel field-effect transistor and its characterization of tunneling conduction, Materials Science in Semiconductor Processing, 10.1016/j.mssp.2016.09.024, 70, 283-287, 2017.08.
13. Kenji Kasahara, Hidemi Higashi, Mario Nakano, Yuta Nagatomi, Keisuke Yamamoto, Hiroshi Nakashima, Konei Hamaya, Effect of post annealing on hole mobility of pseudo-single-crystalline germanium films on glass substrates, Materials Science in Semiconductor Processing, 10.1016/j.mssp.2016.07.004, 70, 66-72, 2017.08.
14. Takayuki Maekura, Yamamoto Keisuke, Hiroshi Nakashima, DONG WANG, Effects of metal/Ge contact and surface passivation on direct band gap light emission and detection for asymmetric metal/Ge/metal diodes, Jpn. J. Appl. Phys., 10.7567/JJAP.55.04EH08, Vol. 55, No. 4S, pp. 04EH08-1-6, 2016.04.
15. DONG WANG, Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima, Direct band gap light emission and detection at room temperature in bulk germanium diodes with HfGe/Ge/TiN structure, Thin Solid Films, 10.1016/j.tsf.2015.09.074, 602, 43-47, Vol. 602, pp. 43-47 , 2016.04.
16. Yuichi Fujita, Michihiro Yamada, Yuta Nagatomi, Keisuke Yamamoto, Sinya Yamada, Kentaro Sawano, Takeshi Kanashima, Hiroshi Nakashima, Kouhei Hamaya, A low-temerature fabricated gate-stack structure for Ge-based MOSFET with ferromagnetic epitaxial Heusler-alloy/Ge electrodes, Jpn. J. Appl. Phys., 10.7567/JJAP.55.063001, Vol. 55, No.06, pp. 063001-1-4, 2016.04.
17. Hiroshi Nakashima, Yamamoto Keisuke, DONG WANG, Electrical Properties of Group 4 Metal-Nitride/Ge Contacts and the Application to Ge Optoelectronic Devices , The Electrochemical Society Transactions, 10.1149/06910.0055ecst, Vol. 69, No. 10, pp. 55-66, 2015.10.
18. Kenji Kasahara, Yuta Nagatomi, Yamamoto Keisuke, Hidemi Higashi, Mario Nakano, Sinya Yamada, DONG WANG, Hiroshi Nakashima, Kouhei Hamaya, Electrical properties of pseudo-single-crystalline germanium thin-film-transistor fabricated on glass substrates, Appl. Phys. Lett., 10.1063/1.4932376, Vol. 107, No. 14, pp. 142102-1-5, 2015.10.
19. Yamamoto Keisuke, Ryutaro Noguchi, Mitsuhara Masatoshi, Minoru Nishida, Toru Hara, DONG WANG, Hiroshi Nakashima, Electrical and structural properties of group-4 transition-metal nitride (TiN, ZrN, and HfN) contacts on Ge, J. Appl. Phys., 10.10631/1.4930573, Vol. 118, No. 11, pp. 115701-1-12, 2015.09.
20. Yuta Nagatomi, Shintaro Tanaka, Yuichi Nagaoka, Yamamoto Keisuke, DONG WANG, Hiroshi Nakashima, Fabrication of PtGe/Ge contacts with high on/off ratio and its application to metal source/drain Ge p-channel MOSFETs , Jpn. J. Appl. Phys., 10.7567/JJAP.54.070306, Vol. 54, No. 7, pp. 070306-1-4 , 2015.06.
21. DONG WANG, Takahiro Maekura, Sho Kamezawa, Yamamoto Keisuke, Hiroshi Nakashima, Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric fin type metal/germanium/metal structure, Appl. Phys. Lett., 10.1063/1.4913261, Vol. 106, No.07, pp. 071102-1-4, 2015.02.
22. Yuta Nagatomi, Yuichi Nagaoka, Yamamoto Keisuke, DONG WANG, Hiroshi Nakashima, Investigation of Al-PMA Effect on Al2O3/GeOx/Ge Gate Stack, The Electrochemical Society Transactions, 10.1149/06406.0261ecst, Vol. 64, No.6, pp. 261-266, 2014.10.
23. DONG WANG, Yuta Nagatomi, Suta Kojima, Yamamoto Keisuke, Hiroshi Nakashima, Low-temperature fabrication of Y2O3//Ge gate stacks with ultrathin GeOx interlayer and low interface states density characterized by a reliable deep-level transient spectroscopy method, Thin Solid Films, 10.1016/j.tsf.2013.10.065, 288-291, Vol. 557, pp. 288-291, 2014.04.
24. Yamamoto Keisuke, Mitsuhara Masatoshi, Keisuke Hiidome, Ryutaro Noguchi, Minoru Nishida, DONG WANG, Hiroshi Nakashima, Role of an interlayer at a TiN/Ge contact to alleviate the intrinsic Fermi-level pinning position towrd the conduction band edge, Appl.Phys.Lett., 10.1063/1.4870510, Vol. 104, No. 13, pp. 132109-1-3, 2014.04.
25. Yamamoto Keisuke, Koichiro Asakawa, DONG WANG, Hiroshi Nakashima, Fabrication of Metal-Nitride/Si Contacts with Low Electron Barrier Height, The Electrochemical Society Transactions, 10.1149/05809.0053, Vol. 58, No.9, pp. 53-59, 2013.10.
26. Hiroshi Nakashima, Yamamoto Keisuke, DONG WANG, Development of Metal Source/Drain Ge-CMOS Using TiN/Ge and HfGe/Ge Contacts, The Electrochemical Society Transactions, 10.1149/05809.0167, Vol. 58, No.9, pp. 167-178, 2013.10.
27. Yamamoto Keisuke, Takahiro Sada, DONG WANG, Hiroshi Nakashima, Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO2/GeO2gate stack, Appl. Phys. Lett., 10.1063/1.4821546, Vol. 103, No.12, pp. 122106-1-3, 2013.09.
28. H. Nakashima, K. Yamamoto, H. Yang, and D. Wang, Gate Stack and Source/Drain Junction Formations for High-Mobility Ge MOSFETs, The Electrochemical Society Transactions, Vol. 50, No.9, pp.205-216, 2012.10.
29. D. Wang, S. Kojima, K. Sakamoto, K. Yamamoto and H. Nakashima, An accurate characterization of interface-state by deep-level transient spectroscopy for Ge metal-insulator-semiconductor capacitors with SiO2/GeO2 bilayer passivation
, J. Appl. Phys., 10.1063/1.4759139, Vol. 112, No. 8, pp. 083707-1-5, 2012.10.
30. K. Yamamoto, K. Harada, H. Yang, D. Wang, H. Nakashima, Fabrication of TiN/Ge Contact with Extremely Low Electron Barrier Height , Jpn. J. Appl. Phys., 10.1143/JJAP.51.070208, Vol. 51, No. 7, pp. 070208-1-3 , 2012.07.
31. K. Yamamoto, T. Yamanaka, K. Harada, T. Sada, K. Sakamoto, S. Kojima, H. Yang, D. Wang, H. Nakashima, Schottky Source/Drain Ge Metal-Oxide-Semiconductor Field-Effect Transistors with Directly Contacted TiN/Ge and HfGe/Ge Structures, Appl. Phys. Express, 10.1143/APEX.5.051301, Vol. 5, No. 5, 051301-1-3 , 2012.05.
32. K. Yamamoto, T. Yamanaka, R. Ueno, K. Hirayama, H. Yang, D. Wang,H. Nakashima, Source/drain junction fabrication for Ge metal-oxide-semiconductor field-effect transistors, Thin Solid Films, 10.1016/j.tsf.2011.10.047, Vol. 520, No. 8, pp. 3382-3386 , 2012.02.
33. H. Yang, D. Wang, H. Nakashima, Influence of SiGe layer thickness and Ge fraction on compressive strain and hole mobility in a SiGe-on-insulator substrate fabricated by the Ge condensation technique, Thin Solid Films, 10.1016/j.tsf.2011.10.078, Vol. 520, No. 8, pp. 3283-3287 , 2012.02.
34. H. Yang, D. Wang, H. Nakashima, Significant Improvement of SiO2/4H-SiC Interface Properties Using Electron Cyclotron Resonance Nitrogen Plasma Irradiation, J. Electrochem. Soc., 10.1149/2.003201jes, Vol. 159, No. 1, pp. H1-H4 , 2012.01.
35. D. Wang, K. Yamamoto, Hongye, H. Yang, H. Nakashima, Defect Evaluation by Photoluminescence for Uniaxially Strained Si-On-Insulator, J. Electrochem.Soc., 10.1149/2.037112jes, Vol. 158, No. 12, pp. H1221-H1224   , 2011.11.
36. H. Nakashima, Y. Iwamura, K. Sakamoto, D. Wang, K. Hirayama, K. Yamamoto, H. Yang, Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2/GeO2 bilayer passivation, Applied Physics Letters, 10.1063/1.3601480, Vol. 98, No. 25, pp. 252102-1-3, 2011.06.
37. M. Iyota, K. Yamamoto, D. Wang, H.Yang, and H. Nakashima, Ohmic contact formation on n-type Ge by direct deposition of TiN, Applied Physics Letters, 10.1063/1.3590711, Vol. 98, No. 19, pp. 192108-1-3, 2011.05.
38. K. Hirayama, R. Ueno, Y. Iwamura, K. Yoshino, D. Wang, H. Yang, H. Nakashima, Fabrication of Ge Metal–Oxide–Semiconductor Capacitors with High-Quality Interface by Ultrathin SiO2/GeO2 Bilayer Passivation and Postmetallization Annealing Effect of Al, Jpn. J. Appl. Phys. , Vol. 50, pp. 04DA10-1-5, 2011.04.
39. K. Yamamoto, R. Ueno, T. Yamanaka, K. Hirayama, H. Yang, D. Wang, H. Nakashima, High-Performance Ge Metal–Oxide–Semiconductor Field-Effect Transistors with a Gate Stack Fabricated by Ultrathin SiO2/GeO2 Bilayer Passivation, Appl. Phys. Express, 10.1143/APEX.4.051301 , Vol.4, No.5, 051301-1-3, 2011.04.
40. H.Gao, K. Ikeda, S. Hata, H. Nakashima, D. Wang, H. Nakashima, Measurement of strain and strain relaxation in free-standing Si membranes by convergent beam electron diffraction and finite element method, Acta Materialia, Vol. 59, pp. 2882–2890, 2011.02.
41. H. Yang, M. Iyota, S. Ikeura, D. Wang, H. Nakashima, Effect of Al2O3 Deposition and Subsequent Annealing on Passivation of Defects in Ge-rich SiGe-on-Insulator, Key Engineering Materials, Vol. 470, pp 79-84 , 2011.02.
42. D. Wang, K. Yamamoto, H. Gao, H. Yang, H. Nakashima, Defect Evaluation by Photoluminescence for Uniaxially Strained Si-On-Insulator, The Electrochemical Society Transactions, Vol. 34, No. 1, pp. 1117-1122, 2011.02.
43. K. Hirayama, K. Yoshino, R.Ueno, Y. Iwamura, H. Yang, D. Wang, H. Nakashima, Fabrication of Ge-MOS capacitors with high quality interface by ultra-thin SiO2/GeO2 bi-layer passivation combined with the subsequent SiO2-depositions using magnetron sputtering, Solid State Electronics, 10.1016/j.sse.2011.01.030, Vol. 60, No.1, pp. 122-127, 2011.02.
44. H. Yang, M. Iyota, S. Ikeura, D. Wang, H. Nakashima, Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al2O3 deposition and subsequent post-annealing, Solid State Electronics, 10.1016/j.sse.2011.01.031, Vol. 60, No.1, pp. 128-133, 2011.02.
45. D. Wang, H. Yang, H. Nakashima, Defect characterization and control for SiGe-on-insulator (Invited), Proceeding of 10th International Conference on Solid-State and Integrated-Circuit Technology(ICSICT2010), I12_08 / pp.1-4, 2010.11.
46. H. Yang, D. Wang, H. Nakashima, Hole-Mobility Enhancement in Ultrathin Strained Si0.5Ge0.5-on-Insulator Fabricated by Ge Condensation Technique, Proceeding of 10th International Conference on Solid-State and Integrated-Circuit Technology(ICSICT2010), O05_06 / pp. 1-3 , 2010.11.
47. D. Wang, H. Yang, H. Nakashima, Microphotoluminescence evaluation of local for freestanding Si membranes with SiN deposition, Proceeding of The Forum on the Science and Technology of Silicon Materials , pp. 411-420, 2010.11.
48. H. Yang, D. Wang, H. Nakashima, Defect evaluation and control of SiGe-on-insulator substrate fabricated by the Ge condensation technique, Proceeding of The Forum on the Science and Technology of Silicon Materials , pp. 438-448, 2010.11.
49. Fabrication of Zr-Based High-k/Ge Gate Stack Structure with Ultra Thin GeO2 Interlayer.
50. H.Gao, K. Ikeda, S. Hata, H. Nakashima, D. Wang, H. Nakashima, Strain distribution in freestanding Si/SixNy membranes studied by transmission electron microscopy, Thin Solid Films, Vol. 518, pp. 6787-6791, 2010.10.
51. H.Gao, K. Ikeda, S. Hata, H. Nakashima, D. Wang, H. Nakashima, Measurement of Strain in Freestanding Si/SixNy Membrane by Convergent Beam Electron Diffraction and Finite Element Method, Jpn. J. Appl. Phys, Vol 49, pp. 090208-1-3, 2010.10.
52. H. Gao, K. Ikeda, S. Hata, H. Nakashima, D. Wang, H. Nakashima, Microstructure and strain distribution in freestanding Si membrane strained by SixNy deposition, Materials Science and Engineering A, Vol.527, pp. 6633-6637, 2010.09.
53. H. Yang, M. Iyota, S. Ikeura, D. Wang, H. Nakashima, Passivation of Electrically Active Defects in Ge-Rich SiGe-on-Insulator by Al2O3 Deposition and Subsequent Post-Deposition Annealing, Appl. Phys. Express, 10.1143/APEX.3.071302, Vol.3, No.7, 071302-1-3, 2010.07.
54. D. Wang, H. Yang, T. Kitamura, H. Nakashima, Influence of freely diffusing excitons on the photoluminescence spectrum of Si thick films with depth distribution of strain, J. Appl. Phys., Vol. 107, No. 3, pp. 033511-1-5 , 2010.02.
55. H. Yang, D. Wang, H. Nakashima, K. Hirayama, S.Kojima, S. Ikeura, Defect control by Al-deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions, Thin Solid Films, Vol. 518, pp. 2342-2345 , 2010.02.
56. D. Wang, H. Yang, T. Kitamura, H. Nakashima, 325 nm-laser-excited micro-photoluminescence for strained Si films, Thin Solid Films, Vol. 518, pp. 2470-2473, 2010.02.
57. K. Hirayama, W. Kira, K. Yoshino, H. Yang, D. Wang, H. Nakashima, Electrical characterization of High-k Gate Dielectrics on Ge with HfGeN and GeO2 interlayers, Thin Solid Films, Vol. 518, pp. 2505-2508, 2010.02.
58. H. Nakashima, D. Wang and  H. Yang, Optical and Electrical Characterization of Defects in SiGe-On-Insulator, The Electochemical Society Transactions, Vol. 25, No. 7, pp. 99-114, 2009.10.
59. H. Yang, D. Wang, H. Nakashima, Evidence for existence of deep acceptor levels in SiGe-on-insulator substrate fabricated using Ge condensation technique, Applied Physics Letters, Vol.95, No.12, pp.122103-1-3, 2009.09.
60. D. Wang and H. Nakashima, Optical and electrical evaluations of SiGe layers on insulator fabricated using Ge condensation by dry oxidation, Solid-State Electronics, Vol. 53, No. 8, pp. 841-849, 2009.08.
61. H. Nakashima, D. Wang, Y. Sugimoto, Y. Suehiro, K.Yamamoto, M. Kajiwara, K. Hirayama , Electrical and structural evaluations of high-k gate dielectrics fabricated using plasma oxidation and the subsequent annealing for a Hf/SiO2/Si structure, Semicond. Sci. Technol. , Vol. 23, No. 12, pp. 125020-1-6, 2008.12.
62. D. Wang, H. Yang, J. Morioka, T. Kitamura, H. Nakashima, Local strain evaluation for freestanding Si membranes by microphotoluminescence using UV laser excitation, Proceeding of 9th International Conference on Solid-State and Integrated-Circuit Technology(ICSICT2008), C4.6 / pp. 1-4, 2008.10.
63. H. Nakashima, Y. Sugimoto, Y. Suehiro, K.Yamamoto, M. Kajiwara, K. Hirayama, D. Wang, Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/SiO2/Si structure, Proceeding of 9th International Conference on Solid-State and Integrated-Circuit Technology(ICSICT2008) , C5.7 / pp.1-4, 2008.10.
64. D. Wang, H. Nakashima, M. Tanaka, T. Sadoh, M. Miyao, J. Morioka, T. Kitamura, Local strain evaluation of single crystal Si pillar by micro Raman spectroscopy and photoluminescence, Thin Solid Films, Vol. 517, No. 1, pp. 31-33, 2008.09.
65. Y. Sugimoto, K. Yamamoto, M. Kajiwara, Y. Suehiro, D. Wang, and H. Nakashima, Dependences of effective work functions of TaN on HfO2 and SiO2 on post-metallization anneal , Thin Solid Films, Vol. 517, No. 1, pp. 204-206, 2008.09.
66. S. Ii, Y. Takaki, K. Ikeda, H. Nakashima, and H. Nakashima, Microstructural change of dislocation structure around SiGe/Si interface in SGOI wafer: wafer ramping process, Thin Solid Films, Vol. 517, No. 1, pp. 38-40, 2008.09.
67. H. Yang, D. Wang, H. Nakashima, H. Gao, K. Hirayama, K. Ikeda, S. Hata, and H. Nakashima , Influence of top surface passivation on bottom-channel hole mobility of ultrathin SiGe- and Ge-on-insulator, Applied Physics Letters, Vol.93, No.7, pp.072104-1-3, 2008.08.
68. S.Ii, T, Hirota, K, Fujimoto, Y, Sugimoto, N, Takata, K, Ikeda, H. Nakashima, H. Nakashima, Direct Evidence of Polycrystalline Silicon Thin Films Formation during Aluminum Induced Crystallization by In-Situ Heating TEM Observation, Japan Institute of Metals, Materials Transactions , Vol. 49, No. 4 (2008), pp.723-727, 2008.05.
69. H. Nakashima and D. Wang, Optical and electrical evaluations of SiGe layers on insulator fabricated using Ge Condensation by dry oxidation (Invited), 4th International SiGe Technology and Device Meeting (ISTDM2008), Abstract, pp.125-126 , 2008.05.
70. D. Wang, H. Nakashima, J. Morioka and T. Kitamura, Microphotoluminescence evaluation of local strain for freestanding Si membranes with SiN deposition, Applied Physics Letters, Vol. 91, No. 24,pp.241918-1-3, 2007.12.
71. Y. Sugimoto, M. Kajiwara, K. Yamamoto, Y. Suehiro, D. Wang and H. Nakashima, Effective work function modulation of TaN metal gate on HfO2 after postmetallization annealing, Applied Physics Letters, Vol. 91, No. 11,pp.112105-1-3, 2007.09.
72. D. Wang, H. Nakashima, M. Tanaka, T. Sadoh, M. Miyao, J. Morioka, and T. Kitamura, Local strain evaluation of single crystal Si pillar by micro Raman spectroscopy and photoluminescence,, 5th Int. Conf. Silicon Epitaxy and Heterostructures, Extended Abstract, Marseille, , pp. 26-27, 2007.05.
73. S. Ii, Y. Takata, K. Ikeda, H. Nakashima, and H. Nakashima, Microstructural change of dislocation structure around SiGe/Si interface in SGOI wafer: wafer ramping process,, 5th Int. Conf. Silicon Epitaxy and Heterostructures, Extended Abstract, Marseille, , pp. 32-33, 2007.05.
74. Y. Sugimoto, K. Yamamoto, M. Kajiwara, Y. Suehiro, D. Wang, and H. Nakashima, Dependences of effective work functions of TaN on HfO2 and SiO2 on post-metalization anneal,, 5th Int. Conf. Silicon Epitaxy and Heterostructures, Extended Abstract, Marseille, , pp. 194-195, 2007.05.
75. Electrical Properties of TaN/Hf based-high-k/Si Gate Stack Structure.
76. Y. Sugimoto, K.Yamamoto, and H. Nakashima, Electrical and Structural Properties of TaN Gate Electrodes Fabricated by Wet Etching Using NH4OH/H2O2 Solution and HF Metal Hard Mask, Jpn. J. Appl. Phys, Vol 46, No. 9, pp. L211-L214, 2007.02.
77. D. Wang, S. Ii, K. Ikeda, H. Nakashima, K. Matsumoto, M. Nakamae, H. Nakashima, Photoluminescence and TEM evaluations of defects generated during SiGe-on-insulator virtual substrate fabrication:Temperature ramping process, Nuclear Instruments and Methods in Physics Research, B 253, pp.31-36, 2006.11.
78. Y. Sugimoto, H. Adachi, K.Yamamoto, D. Wang, H. Nakashima, H. Nakashima, Electrical characterization of high-k gate dielectrics fabricated using plasma oxidation and post-deposition annealing of a Hf/SiO2/Si structure, Materials Science in Semiconductor Processing, No.9, pp1031-1036, 2006.11.
79. D. Wang, S. Ii, K. Ikeda, H. Nakashima, H. Nakashima, Photoluminescence Evaluation of Defects Generated during Temperature Ramp-up Process of SiGe-On-Insulator Virtual Substrate Fabrication, The 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2006), Proceeding of 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2006), Part3of 3, pp.2193-2195, 2006.10.
80. H. Nakashima, M. Miyao, M. Nakamae,T. Asano, Development of Strained Si-SiGe-on-Insulator Wafers for High Speed ULSI, The 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2006), Proceeding of 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2006), Part1of 3, pp.100-103, 2006.10.
81. S. Ii, K. Ikeda, H. Nakashima, K. Matsumoto, M. Nakamae,and H. Nakashima, Transmission electron microscopy studies of misfit dislocation structure of
Si/SiGe interface in SGOI wafer, IMC16,Sapporo,2006, Proceeding of 16th International Microscopy Congress, p.1469., 2006.09.
82. D. Wang, S. Ii, H. Nakashima, K. Ikeda, H. Nakashima, K. Matsumomoto, M. Nakamae, Photoluminescence evaluation of defects generated during SiGe-on-insulator virtual substrate fabrication: Temperature ramping process, Applied Physics Letters, Vol.89, No. 4, pp.041916-1-3, 2006.07.
83. T. Terakawa, D. Wang, H. Nakashima, Fe gettering by p+ layer in bifacial Si solar cell fabrication, Physica B, Vol. 376-377, pp. 231-235, 2006.04.
84. D. Wang, A. Ueda, H. Takada, H. Nakashima, Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurements, Physica B, Vol. 376-377, pp. 411-415, 2006.04.
85. T. Terakawa, D. Wang, and H. Nakashima, Role of Heavily B-doped Layer on Low-Temperature Fe Gettering in Bifacial Si Solar Cell Fabrication, Jpn. J. Appl. Phys., Vol. 45, No. 4A, pp. 2643-2647, 2006.04.
86. D. Wang, S. Ii, K. Ikeda, H. Nakashima, M. Ninomiya, M. Nakamae, H. Nakashima, Structural and electrical evaluation for strained Si/SiGe on insulator, Thin Solid Films, Vol. 508, pp. 107-111, 2006.04.
87. D. Wang, K. Matsumoto, M. Nakanae and H. Nakashima, Photoluminescence characterization of strained Si-SiGe-on-Insulator wafers with different Ge fractions, Applied Physics Letters, 10.1063/1.2152109, 87, 25, Vol. 87 No. 25, pp. 251928-1-3, 2005.12.
88. D. Wang, K. Matsumoto, M. Nakanae and H. Nakashima, Photoluminescence Characterization of Strained Si-SiGe-on-Insulator wafers, Extended Abstracts of the 2005 International Conference on Solid State Devices And Materials, Kobe, 10.1143/JJAP.45.3012, 45, 4B, 3012-3016, pp. 576-577, 2005.09.
89. T. Terakawa, D. Wang and H. Nakashima, Fe gettering by p+ layer in bifacial Si solar cell fabrication, The 23rd International Conference on Defects in Semiconductors, Abstract p. 368, 10.1016/j.physb.2005.12.061, 376, 231-235, 2005.07.
90. D. Wang, A. Ueda, H. Takada and H. Nakashima, Electrical characterization of thin SOI wafers using lateral-MOS transient capacitance measurements, The 23rd International Conference on Defects in Semiconductors, Abstract p. 281, 10.1016/j.physb.2005.12.106, 376, 411-415, 2005.07.
91. Y. Sugimoto, N. Takata, T. Hirota, K. Ikeda, F. Yoshida, H. Nakashima, H. Nakashima, Low-Temperature Fabrication of Polycrystalline Si Thin Film Using Al-Induced
Crystallization without Native Al Oxide at Amorphous Si/Al Interface, Jpn. J. Appl. Phys., 10.1143/JJAP.44.4770, 44, 7A, 4770-4775, Vol. 44, No. 7A, pp. 4770-4775, 2005.07.
92. T. terakawa, D. Wang, H.Nakashima, Fe Gettering for High-Efficiency Solar Cell Fabrication, Jpn. J. Appl. Phys., 10.1143/JJAP.44.4060, 44, 6A, 4060-4061, Vol. 44, No. 6A, pp. 4060-4061, 2005.06.
93. D.Wang, S. Ii, K. Ikeda, H. Nakashima, M. Ninomiya, M. Nakamae, H. Nakashima, Structural and Electrical Evaluation for Strained Si/SiGe on Insulator, 4th Int. Conf. Silicon Epitaxy and Heterostructures, 10.1016/j.tsf.2005.07.338, 508, 1-2, 107-111, Extended Abstract, pp. 78-79, 2005.05.
94. J. Wang, L. Zhao, N. H. Luu, D. Wang and H. Nakashima, Structural and electrical properties of Zr oxide film for high-k gate dielectrics by using electron cyclotron resonance plasma sputtering, Appl. Phys. A (Materials Science & Processing), 10.1007/s00339-003-2483-z, 80, 8, 1781-1787, Vol. 80, No. 8, pp. 1781-1787, 2005.05.
95. D. Wang, M. Ninomiya, M. Nakamae, H. Nakashima, Evaluation of Interface States Density and Minority Carrier Generation Lifetime for Strained Si/SiGe Wafers Using Transient Capacitance Method, Jpn. J. Appl.Phys., 10.1143/JJAP.44.2390, 44, 4B, 2390-2394, Vol.44, No. 4B, pp.2390-2394, 2005.04.
96. D. Wang, H. Nakashima, M. Ninomiya, M. Nakamae, Electrical characterization of Strained Si/SiGe Wafers using transient capacitance mesurements, Applied Physics Letters, 10.1063/1.1891303, 86, 12, Vol. 86 No. 12, pp. 122111-1-3, 2005.03.
97. H. Nakashima, D. Wang, M. Ninomiya, M. Nakamae, Electrical Characterization of Strained Si/SiGe Wafers using Transient Capacitance Mesurements, The 4th International Symposium on Advanced Science and Technology of Silicon Materials (JSPS Si Symposium, Abstracts), pp.365-369, 2004.11.
98. D. Wang, M. Ninomiya, M. Nakamae and H. Nakashima, Evaluation of Interface States and Minority Carrier Generation Lifetime for Strained Si/SiGe Wafers Using Transient Capacitance Method, 2004 the 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, 2148-2150, pp. 2148-2150, 2004.10.
99. D. Wang, M. Ninomiya, M. Nakamae and H. Nakashima, Electrical Characterization of Strained Si/SiGe Wafers using Transient Capacitance Mesurements, Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials, pp. 526-527, 2004.09.
100. N. H. LUU, L. Zhao, D. Wang, Y. Sugimoto, K. Ikeda, H. Nakashima and H. Nakashima, Optimization of Ar-diluted N2 electron cyclotron resonance plasma for high-quality SiN film growth at low temperature, 九州大学大学院総合理工学報告, Vol.26, No.1, pp.1-8, 2004.06.
101. H. Nakashima, M. Nakamae, M. Miyao, H. Okushi, T. Asano and H. Hagino, Development of Strained Silicon Wafer for Next Generation ULSI, 2004 Asia-Pacific Workshop on Fundamental and Application of Advanced Semicondutor Devices, pp. 75-80, 2004.06.
102. H. Nakashima, D. Wang, T. Noguchi, K. Itani, J. Wang and L. Zhao, Method for Detecting in Silicon-On-Insulator Using Capacitance Transient Spectroscopy, Jpn. J. Appl. Phys., Vol. 43, No. 5A, pp. 2402-2408, 2004.05.
103. J.S. Gao, K. Umeda, K. Uchino, H. Nakashima and K. Muraoka, Control of sizes and densities of nano catalysts for nanotube synthesis by plasma breaking method, Materials Science and Engineering, 10.1016/j.mseb.2003.10.078, 107, 2, 113-118, B107 (2004), pp. 113-118, 2004.02.
104. L. Zhao, N. H. Luu, D. Wang, Y. Sugimoto, K. Ikeda, H. Nakashima and H. Nakashima, Low-Temperature Growth of Thin Silicon Nitride Film by Electron Cyclotron Resonance Plasma Irradiation, Jpn. J. Appl. Phys., 10.1143/JJAP.43.L47, 43, 1A-B, L47-L49, Vol. 43, No. 1A/B, 2004, pp. L 47-L 49, 2003.12.
105. H. Nakashima, D. Wang, K. Itani, M. Ninomiya and M. Nakamae, Evaluation and control of electrically active defect in strained-silicon wafer, Proceedings of the Forum on the Science and Technology of Silicon Materials 2003, pp. 293-298, 2003.11.
106. T. Yasuda, K. Fujita, H. Nakashima and T. Tsutsui, Organic Field-Effect Transistors with Gate Dielectric Films of Poly-p-Xylylene Derivatives Prepared by Chemical Vapor Deposition, Jpn. J. Appl. Phys., 10.1143/JJAP.42.6614, 42, 10, 6614-6618, Vol. 42, No. 10, pp 6614-6618, 2003.10.
107. J. L. Wang, L. Zhao, N. H. Luu, K. Makiyama, D. Wang and H. Nakashima, Growth Kinetics and Electrical Properties of Ultrathin Si Oxide Film Fabricated Using Krypton-Diluted Oxygen Plasma Excited by Electron Cyclotron Resonance, Jpn. J. Appl. Phys., 10.1143/JJAP.42.6496, 42, 10, 6496-6501, Vol. 42, No. 10, pp. 6496-6501, 2003.10.
108. T. Joge, I. Araki, T. Uematsu, T. Warabisako, H. Nakashima and K. Matsukuma, Low-Temperature Boron Gettering for Improving the Carrier Lifetime in Fe-Contaminated Bifacial Silicon Solar Cells with n+pp+ Back-Surface-Field Structure, Jpn. J. Appl. Phys., 10.1143/JJAP.42.5397, 42, 9A, 5397-5404, Vol. 42, No. 9A, pp.5397-5404, 2003.09.
109. T. Yasuda, K. Fujita, H. Nakashima and T. Tsutsui, Benefit of Flat Polymer Dielectric Surface Loading Organic Semiconductors in Field-Effect Transistors Prepared by the Electrode-Peeling Transfer, Jpn. J. Appl. Phys., Vol. 42, No. 8A, pp.L967-L969, 2003.08.
110. J. L. Wang, T. Saitou, Y. Sugimoto, D. Wang, L. Zhao, and H. Nakashima, Effect of Ion Mass and Ion Energy on Low-Temperature Deposition of Polycrystalline-Si Thin Film on SiO2 Layer by Using Sputtering-Type Electron Cyclotron Resonance Plasma, Jpn. J. Appl. Phys., 10.1143/JJAP.42.L511, 42, 5B, L511-L513, Vol.42 , No.5B, pp.L511 - L513, 2003.03.
111. J. S. Gao, K. Umeda, K. Uchino, H. Nakashima and K. Muraoka, Plasma breaking of thin films into nano-sized catalysts for carbon nanotube synthesis, Materials Science & Engineering A352, 10.1016/S0921-5093(02)00912-7, 352, 1-2, 308-313, pp308-313, 2003.01.
112. T. Joge, I. Araki, T. Uematsu, H. Nakashima and K. Matsukuma, A Thermal Dynamical Boron Getter(pp+ Getter)in Fe-Contaminated Mass Production of the Boron diffused n+pp+BSF Bifacial Silicon Solar Cells., Proc.IEEE 29th Photovoltaic Specialist Conference, p.254, 2002.12.
113. Fabrication of Thin Si Films and Ultra Thin Si Dioxide Films by Using Electron Cyclotron Resonance Plasmas and Electrical Evaluation of the Fabricated Thin Films.
114. J. L. Wang, H. Nakashima, J. S. Gao, and K. Muraoka, Electrical Properties of Low-Temperature Epitaxial Doped Si Thin Films Fabricated by Using a Sputtering-Type Electron Cyclotron Resonance Plasma, J. Phys. D: appl. Phys., 10.1088/0022-3727/34/7/301, 34, 7, 1025-1031, Vol. 34, pp. 1025-1031, 2001.05.
115. J. L. Wang, H. Nakashima, J. S. Gao, K. Iwanaga, K. Furukawa, K. Muraoka and Y. Sung, Electrical Characteristics of p-n Junction Diodes Fabricated by Si Epitaxy at Low Temperature Using Sputtering-Type Electron Cyclotron Resonance Plasma, J. Vac. Sci. and Tech. B, 10.1116/1.1358884, 19, 2, 333-336, Vol. 19 No. 2, pp. 333-336, 2001.03.
116. S. Matsuo, M. Yamamoto, T. Sadoh, T. Tsurushima, D. W. Gao, K. Furukawa and H. Nakashima, ECR Plasma Oxidation: Dependence on Energy of Argon Ion, Mater. Res. Soc. Symp. Proc., 585, 171-176, Vol. 585, pp. 171-176, 2001.01.
117. D. W. Gao, K. Furukawa, H. Nakashima, J. S. Gao, J. L. Wang, K. Muraoka, Room Temperature Deposition of Silicon Oxynitride Films with Low Stress Using Sputtering-Type Electron Cyclotron Resonance Plasmas, Mater. Res. Soc. Symp. Proc., 594, 457-462, Vol. 594, pp. 457-462, 2000.11.
118. S. Shigetomi, T. Ikari, H. Nakashima, Electrical Properties of p- and n-GaSe Doped with As and Ge, Jpn. J. Appl. Phys., 10.1143/JJAP.39.5083, 39, 9A, 5083-5084, Vol. 39, No. 9A, pp. 5083-5084, 2000.09.
119. S. Matsuo, M. Yamamoto, T. Sadoh, T. Tsurushima, D. W. Gao, K. Furukawa and H. Nakashima, Effects of Ion Irradiation on Silicon Oxidation in Electron Cyclotron Resonance Argon and Oxygen Mixed Plasma, J. Appl. Phys., 10.1063/1.373868, 88, 3, 1664-1669, Vol. 88, No. 3, pp. 1664-1669, 2000.08.
120. J. S. Gao, J. L. Wang, N. Sakai, K. Iwanaga, K. Muraoka, H. Nakashima, D. W. Gao and K. Furukawa, Study of The Effects of Discharge Conditions and Substrate Temperature on
Si Epitaxial Deposition Using Sputtering-Type Electron Cyclotron Resonance
Plasma., J. Vac. Sci. and Tech. A, 10.1116/1.582269, 18, 3, 873-878, Vol. 18, No. 3, pp. 873-878, 2000.05.
121. J. S. Gao, H. Nakashima, J. L. Wang, K. Iwanaga, H. Nakashima, K. Ikeda, K. Furukawa and K. Muraoka, Optimum Discharge Condition of DC Bias Electron Cyclotron Resonance Plasma
Sputtering for High Quality Si Epitaxial, Jpn. J. Appl. Phys., 10.1143/JJAP.39.2834, 39, 5A, 2834-2838, Vol. 39, No. 5A, pp. 2834-2838, 2000.05.
122. K. Furukawa, D. W. Gao, H. Nakashima, H. Ijiri, K. Uchino and K. Muraoka, Verification of Preoxidation Effect on Deposition of Thin Gate-quality Silicon
Oxide Films at Low Temperature by a Sputtering-type ECR Microwave Plasma, Materials Science and Engineering, 10.1016/S0921-5107(99)00485-7, 72, 2-3, 128-131, B72, 128-131, 2000.03.
123. J. S. Gao, H. Nakashima, J. L. Wang, K. Iwanaga, D. W. Gao, K. Furukawa, K. Muraoka, Effect of Substrate Bias on Si Epitaxial Growth Using Sputtering-type Electron Cyclotron Resonance (ECR) Plasma, Jpn. J. Appl. Phys., 10.1143/JJAP.38.L1293, 38, 11B, L1293-L1295, Vol. 38, No. 11B, pp. L1293-L1295, 1999.11.
124. D. W. Gao, K. Furukawa, H. Nakashima, J. S. Gao, J. L. Wang, K. Muraoka, Room Temperature Deposition of Silicon Nitride Films for Passivation of Organic Electroluminescence Device Using a Sputtering-type Electron Cyclotron Resonance Plasma, Jpn. J. Appl. Phys., 10.1143/JJAP.38.4868, 38, 8, 4868-4871, Vol. 38, No. 8, pp. 4868-4871, 1999.08.
125. S. Shigetomi, T. Ikari, H. Nakashima, Radiative Centers in Layer Semiconductor p-GaSe Doped with Mn, Jpn. J. Appl. Phys., 10.1143/JJAP.38.3506, 38, 6A, 3506-3507, Vol. 38, No. 6A, pp. 3506-3507, 1999.06.
126. J. S. Gao, H. Nakashima, N. Sakai, D. W. Gao, J. L. Wang, K. Furukawa, K. Muraoka, Growth of Epitaxial Silicon Film at Low Temperature by Using Sputtering-type
Electron Cyclotron Resonance Plasma, Jpn. J. Appl. Phys., 10.1143/JJAP.38.L220, 38, 3A, L220-L222, Vol. 38, No. 3A, pp. L220-L222, 1999.03.
127. Y. C. Liu, K. Furukawa, H. Nakashima, Y. Kashiwazaki, D. W. Gao, K. Uchino, K. Muraoka, H. Tsuzuki, Compositional and Structural Studies of Amorphous Silicon-Nitrogen Alloys Deposited at Room Temperature using a Sputtering-type Electron Cyclotron Resonance Microwave Plasma, Philo. Mag. B, 10.1080/13642819908206788, 79, 1, 137-148, Vol. 79, No. 1, pp. 137-148, 1999.01.
128. S. Shigetomi, T. Ikari, H. Nakashima, Characterization of Phosphorus in Layer Semiconductor GaSe, J. Luminescence, 10.1016/S0022-2313(98)00031-3, 79, 2, 79-84, Vol. 79, pp.79-84, 1998.10.
129. K. Furukawa, Y. Liu, H. Nakashima, D. W. Gao, Y. Kashiwazaki, K. Uchino, K. Muraoka, H. Tsuzuki, Effects of Oxygen Content on Properties of Silicon Oxide Films Prepared at Room Temperature by Sputtering-type Electron Cyclotron Resonance Plasma, J. Appl. Phys., 10.1063/1.368683, 84, 8, 4579-4584, Vol.84, No.8, pp. 4579-4584, 1998.10.
130. S. Shigetomi, T. Ikari, H. Nakashima, Impurity Levels in p-Type Layered Semiconductor InSe Doped with Hg, phys. stat. sol. (b), 10.1002/(SICI)1521-3951(199809)209:1<93::AID-PSSB93>3.3.CO;2-Q, 209, 1, 93-99, Vol. 209, No. 1, pp. 93-99, 1998.09.
131. S. Shigetomi, T. Ikari, H. Nakashima, Annealing Behavior of Deep Trap Level in p-GaTe, Jpn. J. Appl. Phys., 10.1143/JJAP.37.3282, 37, 6A, 3282-3283, Vol. 37, No. 6A, pp. 3282-3283, 1998.06.
132. K. Furukawa, Y. C. Liu, D. W. Gao, H. Nakashima, K. Uchino, K. Muraoka, H. Tsuzuki, Observation of Si Cluster Formation in SiO2 Films through Annealing Process using x-ray Photoelectron Spectroscopy and Infrared Techniques, Appl. Phys. Lett., 10.1063/1.120865, 72, 6, 725-727, Vol. 72, No. 6, pp. 725-727, 1998.02.
133. D. W. Gao, Y. Kashiwazaki, K. Muraoka, H. Nakashima, K. Furukawa, Y. C. Liu, T. Tsurushima, Deposition of High-quality Silicon Oxynitride Film at Low Temperature by using a Sputtering-type Electron Cyclotron Resonance Plasma, Jpn. J. Appl. Phys., 36, 12B, L1692-L1694, Vol. 36, No. 12B, pp. L1692-1694, 1997.12.
134. D. W. Gao, Y. Kashiwazaki, K. Muraoka, H. Nakashima, K. Furukawa, Y. C. Liu, K. Shibata, T. Tsurushima, Effect of Preoxidation on Deposition of Thin Gate-quality Silicon Oxide Film at Low Temperature by using a Sputter-type Electron Cyclotron Resonance Plasma, J. Appl. Phys., 10.1063/1.366431, 82, 11, 5680-5685, Vol. 82, No. 11, pp. 5680-5685, 1997.12.
135. S. Zhao, A. L. Smith, S. H. Ahn, G. J. Norga, M. T. Platero, H. Nakashima, L. V. C. Assali, J. Michel, L. C. Kimerling, Iron in p-type Silicon: A Comprehensive Model, Proc. 19th Int. Conf. Defects in Semiconductors, 258-2, 429-436, ( Materials Science Forum, Vols. 258-263, Trans. Tech. publ.), pp. 429-436, 1997.12.
136. Y. C. Liu, K. Furukawa, D. W. Gao, H. Nakashima, K. Uchino, K. Muraoka, In-situ Infrared Reflective Absorption Spectroscopy Characterization of SiN Films Deposited using Sputtering-type ECR Microwave Plasma, Appl. Surf. Sci., 10.1016/S0169-4332(97)00295-X, 121, 233-236, Vols. 121/122, pp. 233-236, 1997.11.
137. K. Furukawa, Y. C. Liu, D. W. Gao, H. Nakashima, K. Uchino, K. Muraoka, In situ FT-IR Reflective Absorption Spectroscopy for Characterization of SiO2 Thin Films Deposited using Sputtering-type Electron Cyclotron Reonance Microwave Plasma, Appl. Surf. Sci., 10.1016/S0169-4332(97)00294-8, 121, 228-232, Vols. 121/122, pp. 228-232, 1997.11.
138. T. Sadoh, A. Matsushita, Y.-Q. Zhang, D.-J. Bai, A. Baba, A. Kenjo, T. Tsurushima, H. Mori, H. Nakashima, Deep States in Silicon on Sapphire by Transient-Current Spectroscopy, J. Appl. Phys., 10.1063/1.366394, 82, 10, 5262-5264, Vol. 82, No. 10, pp. 5262-5264, 1997.11.
139. T. Sadoh, K. Tsukamoto, A. Baba, D. Bai, A. Kenjo, T. Tsurushima, H. Mori and H. Nakashima, Deep Level of Iron-Hydrogen Complex in Silicon, J. Appl. Phys., 10.1063/1.365746, 82, 8, 3828-3831, Vol. 82, No. 8, pp. 3828-3831, 1997.10.
140. D.-J. Bai, T. Kawase, A. Baba, A. Kenjo, T. Sadoh, H. Nakashima, H. Mori, T. Tsurushima, Tapered-Surface Etching of GaAs Utilizing Low-Energy Ion Bombardment Effect, Res. Rep. Infor. Sci. and Electri. Eng. Kyushu Univ., Vol. 2, No. 2, pp. 225-228, 1997.09.
141. D.-J. Bai, T. Kawase, A. Baba, A. Kenjo, T. Sadoh, H. Nakashima, H. Mori, T. Tsurushima, Effect of Energy Transport with Recoil Atoms on Deposited Energy Distribution in Silicon Irradiated with Energitic Ions, Res. Rep. Infor. Sci. and Electri. Eng. Kyushu Univ., Vol. 2, No. 2, pp. 219-223, 1997.09.
142. H. Nakashima, K. Furukawa, Y. C. Liu, D. W. Gao, Y. Kashiwazaki, K. Muraoka, K. Shibata, and T. Tsurushima, Low-temperature Deposition of High-Quality Silicon Dioxide Films by Sputtering-type Electron Cyclotron Resonance Plasma, J. Vac. Sci. and Tech. A, 10.1116/1.580664, 15, 4, 1951-1954, Vol. 15, No. 4, pp. 1951-1954, 1997.08.
143. S. H. Ahn, S. Zhao, A. L. Smith, L. L. Chalfoun, M. Platero, H. Nakashima, L. C. Kimerling, Gettering of Fe by Aluminum in p-type Cz Silicon, Mater. Res. Soc. Symp. Proc., Vol. 442, 169-174, 1997.07.
144. S. Shigetomi, T. Ikari, H. Nakashima, Electrical and Optical Characteristics of the Layer Semiconductor p-GaSe Doped with Ag, phys. stat. sol. (a), 10.1002/1521-396X(199703)160:1<159::AID-PSSA159>3.0.CO;2-M, 160, 1, 159-164, Vol. 160, No. 1, pp. 159-164, 1997.03.
145. D.-J. Bai, T. Kawase, A. Baba, A. Kenjo, T. Sadoh, H. Nakashima, H. Mori, T. Tsurushima, Simplified Evaluation of Displacement Effect Distribution in Silicon Irradiated with Low-Energy Ions, Res. Rep. Infor. Sci. and Electri. Eng. Kyushu Univ., Vol. 2, No. 1, pp. 59-64, 1997.03.
146. A. Baba, D. Bai, T. Sadoh, A. Kenjo, H. Nakashima, H. Mori, T. Tsurushima, Behavior of Radiation-Induced Defects and Amorphization in Silicon Crystal, Nucl. Instrum. & Methods B, 10.1016/S0168-583X(96)00392-8, 121, 1-4, 299-301, Vol. 121, 299—301, 1997.01.
147. S. Sakauchi, M. Suezawa, K. Sumino, H. Nakashima, Recombination-Enhanced Motion of Fe Atom in Fe-Acceptor Pair in Si, Proc. 23rd Int. Conf. the Physics of Semiconductors,, Vol. 4, pp. 2701-2704, 1996.12.
148. S. Sakauchi, M. Suezawa, K. Sumino, H. Nakashima, Recombination-Enhanced Fe Atom Jump between the First and the Second Neighbor Site of Fe-acceptor Pair in Si, J. Appl. Phys., 10.1063/1.363695, 80, 11, 6198-6203, Vol. 80, No. 11, pp. 6198-6203, 1996.12.
149. S. Shigetomi, T. Ikari, H. Nakashima, Electrical Properties of Layer Semiconductor p-GaSe Doped with Cu, J. Appl. Phys., 10.1063/1.363418, 80, 8, 4779-4781, Vol. 80, No. 8, pp. 4779-4781, 1996.10.
150. S. Shigetomi, T. Ikari, H. Nakashima, Photoluminescence of Layer Semiconductor p-GaSe Doped with Mg, phys. stat. sol. (a), 10.1002/pssa.2211560233, 156, 2, K21-K24, Vol. 156, No. 2, pp. K21-24, 1996.08.
151. S. Shigetomi, T. Ikari, H. Nakashima, Photoluminescence Spectra of n-GaSe Layered Semiconductor Doped with Sn, Jpn. J. Appl. Phys., 10.1143/JJAP.35.4291, 35, 8, 4291-4292, Vol. 35, No. 8, pp. 4291-4292, 1996.08.
152. H. Nakashima, T. Sadoh, T. Tsurushima, Metastable-Defect Behaviors of Iron-Boron Pairs in Silicon using Recombination-Enhanced Defect Reaction, Defect and Diffusion Forum, Vols. 136-137, pp. 41-60, 1996.07.
153. H. Nakashima, T. Sadoh, T. Tsurushima, Recombination-Enhanced Migration of Interstitial Iron in Silicon, Proc. 18th Int. Conf. Defects in Semiconductors, 196-, 1351-1355, ( Materials Science Forum, Vols. 196-201, Trans. Tech. publ.), pp. 1351-1356, 1995.12.
154. A. Baba, T. Sadoh, A. Kenjo, H. Nakashima, H. Mori, T. Tsurushima, Evaluation of Damage Induced by Low-Energy Ion Irradiation in Silicon, Mem. Fac. Eng. Kyushu Univ., Vol. 55, No. 2, pp. 127-138, 1995.06.
155. T. Sadoh, H. Takeshita, A. Baba, A. Kenjo, H. Nakashima, T. Tsurushima, Behavior of Defects Induced by Low-Energy Ions in Silicon Films, Jpn. J. Appl. Phys., 10.1143/JJAP.33.7151, 33, 12B, 7151-7155, Vol. 33, No. 12B, pp. 7151-7155, 1994.12.
156. S. Shigetomi, T. Ikari, H. Nakashima, Impurity Levels in Layer Semiconductor p-GaSe with Mn, J. Appl. Phys., 10.1063/1.357145, 76, 1, 310-314, Vol. 76, No. 1, pp. 310—314, 1994.07.
157. H. Nakashima, T. Sadoh, T. Tsurushima, Electrical and Thermal Properties of Structurally Metastable Iron-Boron Pairs in Silicon, Phys. Rev. B, 10.1103/PhysRevB.49.16983, 49, 24, 16983-16993, Vol. 49, No. 24, pp. 16983—16993, 1994.06.
158. T. Sadoh, M. Watanabe, H. Nakashima, T. Tsurushima, Deep Levels of Chromium-Hydrogen Complexes in Silicon, J. Appl. Phys., 10.1063/1.356018, 75, 8, 3978-3981, Vol. 75, No. 8, pp. 3978-3981, 1994.04.
159. H. Nakashima, T. Sadoh, T. Tsurushima, Metastable-Defect Behaviors of Iron-Boron Pairs in Silicon, Proc. 17th Int. Conf. Defects in Semiconductors, 143-, 1191-1196, ( Materials Science Forum, Vols. 143-147, Trans. Tech. publ.), pp. 1191-1196, 1994.01.
160. T. Sadoh, H. Nakashima, T. Tsurushima, Deep Levels of Vanadium- and Chromium-Hydrogen Complexes in Silicon, Proc. 17th Int. Conf. Defects in Semiconductors, 143-, 939-943, ( Materials Science Forum, Vols. 143-147, Trans. Tech. publ.), pp. 939-944, 1994.01.
161. H. Nakashima, T. Sadoh, H. Kitagawa, K. Hashimoto, Diffusion and Electrical Properties of 3d Transition-Metal Impurity Series in Silicon, Proc. 17th Int. Conf. Defects in Semiconductors, 143-, 761-765, ( Materials Science Forum, Vols. 143-147, Trans. Tech. publ.), pp. 761-766, 1994.01.
162. S. Shigetomi, T. Ikari, H. Nakashima, Optical and Electrical Properties of Layer Semiconductor p-GaSe Doped with Zn, J. Appl. Phys., 10.1063/1.354436, 74, 6, 4125-4129, Vol. 74, No. 6, pp. 4125-4129, 1993.09.
163. H. Nakashima, T. Sadoh, T. Tsurushima, Evaluation of Structurally Metastable Iron-Boron Pairs in Silicon, 1993 Extended Abstracts of Solid State Device and Materials, pp. 1017-1019, 1993.08.
164. S. Shigetomi, T. Ikari, H. Nakashima, Electrical Characteristics of Layer Semiconductor p-GaSe Doped with Cd, J. Appl. Phys., 10.1063/1.352765, 73, 9, 4686-4688, Vol. 73, No. 9, pp. 4686-4688, 1993.05.
165. H. Nakashima, T. Sadoh, T. Tsurushima, Hole Traps of Metastable Iron-Boron Pairs in Silicon, J. Appl. Phys., 10.1063/1.353056, 73, 6, 2803-2808, Vol. 73, No. 6, pp. 2803-2808, 1993.03.
166. H. Nakashima,, Metastable Defects of Iron-Boron Pair in Silicon, Mater. Res. Soc. Symp. Proc., Vol. 262, pp. 555-560, 1992.10.
167. T. Sadoh, H. Nakashima, T. Tsurushima, Deep Levels of Vanadium and Vanadium-Hydrogen Complex in Silicon, J. Appl. Phys., 10.1063/1.352353, 72, 2, 520-524, Vol. 72, No. 2, pp. 520-524, 1992.07.
168. H. Kawahara, Y. Okamoto, K. Tahira, J. Morimoto, T. Miyakawa, H. Nakashima, Vanadium Related Deep Levels in n-Silicon Detected by Junction Capacitance Waveform Analysis, Jpn. J. Appl. Phys., 10.1143/JJAP.31.87, 31, 1, 87-88, Vol. 31, No. 1, pp. 87-88, 1992.01.
169. H. Nakashima, K. Hashimoto, Diffusivities of 3d Transition-Metal Impurities in Silicon, Proc. 16th Int. Conf. Defects in Semiconductors, (Materials Science Forum, Vols. 83-87, Trans. Tech. publ.), pp. 227-232, 1992.01.
170. S. Shigetomi, T. Ikari, H. Nakashima, H. Nishimura, Deep Levels of Zn-Doped p-GaSe, phys. stat. sol. (a), Vol. 128, No. 2, pp. K95-98, 1991.12.
171. S. Kuge, H. Nakashima, Solubility and Diffusion Coefficient of Electrically Active Titanium in Silicon, Jpn. J. Appl. Phys., 10.1143/JJAP.30.2659, 30, 11A, 2659-2663, Vol. 30, No. 11A, pp. 2659-2663, 1991.11.
172. H. Kitagawa, S. Tanaka, H. Nakashima, M. Yoshida, Electrical Properties of Nickel in Silicon, J. Electron. Mater., 10.1007/BF02657824, 20, 6, 441-447, Vol. 20, No. 6, pp. 441-447, 1991.06.
173. T. Sadoh, H. Nakashima, Diffusion of Vanadium in Silicon, Appl. Phys. Lett., 10.1063/1.105154, 58, 15, 1653-1655, Vol. 58, No. 15, pp. 1653-1655, 1991.04.
174. H. Nakashima, K. Hashimoto, Deep Impurity Levels and Diffusion Coefficient of Manganese in Silicon, J. Appl. Phys., 10.1063/1.347285, 69, 3, 1440-1445, Vol. 69, No. 3, 1440-1445, 1991.02.
175. K. Tahira, M. Fudamoto, M. Tsuboyama, H. Nakashima, T. Miyakawa, Multiexponential and Spectral Analysis of Carrier Emission Processes from Co-related Deep Levels in p-Silicon, Jpn. J. Appl. Phys., 10.1143/JJAP.29.2026, 29, 10, 2026-2030, Vol. 29, No. 10, pp. 2026-2030, 1990.10.
176. H. Nakashima, Y. Tsumori, T. Miyagawa, K. Hashimoto, Deep Impurity Levels of Cobalt in Silicon, Jpn. J. Appl. Phys., 10.1143/JJAP.29.1395, 29, 8, 1395-1398, Vol. 29, No. 8, pp. 1395-1398, 1990.08.
177. S. Shigetomi, H. Ohkubo, T. Ikari, H. Nakashima, Zn-Induced Impurity Levels in Layer Semiconductor InSe, J. Appl. Phys., 10.1063/1.344075, 66, 8, 3647-3650, Vol. 66, No. 8, pp. 3647-3650, 1989.10.
178. S. Shigetomi, T. Ikari, H. Nakashima, H. Ohkubo, Deep Levels of Cd-Doped InSe, phys. stat. sol. (a), 10.1002/pssa.2211150150, 115, 1, K43-K45, Vol. 115, No. 1, pp. K43-45, 1989.09.
179. H. Nakashima, K. Hashimoto, Method for Estimating Accurate Deep-Trap Densities from DLTS of Junctions Containing Several Kinds of Deep-Traps, Jpn. J. Appl. Phys., 10.1143/JJAP.28.1402, 28, 8, 1402-1406, Vol. 28, No. 8, pp. 1402-1406, 1989.08.
180. T. Isobe, H. Nakashima, K. Hashimoto, Diffusion Coefficient of Interstitial Iron in Silicon, Jpn. J. Appl. Phys., 10.1143/JJAP.28.1282, 28, 7, 1282-1283, Vol. 28, No. 7, pp. 1282-1283, 1989.07.
181. H. Kitagawa, H. Nakashima, Amphoteric Property of Electrically Active Nickel in Silicon, Jpn. J. Appl. Phys., 10.1143/JJAP.28.305, 28, 3, 305-310, Vol. 28, No. 3, pp. 305-310, 1989.03.
182. K. Hashimoto, H. Nakashima, K. Hashimoto, Diffusion of Electrically-Active Cobalt in Silicon, Jpn. J. Appl. Phys., 10.1143/JJAP.27.1776, 27, 9, 1776-1777, Vol. 27, No. 9, pp. 1776-1777, 1988.09.
183. H. Nakashima, T. Isobe, Y. Yamamoto, K. Hashimoto, Diffusion Coefficient of Iron in Silicon at Room Temperature, Jpn. J. Appl. Phys., 10.1143/JJAP.27.1542, 27, 8, 1542-1543, Vol. 27, No. 8, pp. 1542-1543, 1988.08.
184. H. Kitagawa, K. Sawakuma, H. Nakashima, Deep Acceptor and Donor Levels Associated with Nickel in Silicon, Reports of Electron. Lab., Fukuoka Inst. of Tech., Vol. 4, pp. 11-17, 1987.10.
185. H. Kitagawa, H. Nakashima, Nickel-Related Donor Level in Silicon, phys. stat. sol. (a), 10.1002/pssa.2211020152, 102, 1, K23-K27, Vol. 102, No. 1, pp. K23-27, 1987.07.
186. H. Kitagawa, H. Nakashima, Nickel-Related Deep Levels in Silicon Studied by Combined Hall Effect and DLTS Measurement, phys. stat. sol. (a), 10.1002/pssa.2210990150, 99, 1, K49-K52, Vol. 99, No. 1, pp. K49-52, 1987.01.
187. H. Suwaki, K. Hashimoto, H. Nakashima, K. Hashimoto, Annealing of Supersaturated Cobalt in Silicon, Jpn. J. Appl. Phys., 10.1143/JJAP.25.1952, 25, 12, 1952-1953, Vol. 25, No. 12, pp. 1952-1953, 1986.12.
188. H. Kitagawa, H. Nakashima, K. Hashimoto, Energy Levels of Electrically Active Cobalt in Silicon, Mem. Fac. Eng. Kyushu Univ., Vol. 46, No. 2, pp. 119-130, 1986.06.
189. H. Nakashima, T. Miyagawa, S. Sugitani, K. Hashimoto, Method of Analysis of a Single-Peak DLTS spectrum with Two Overlapping Deep-trap Responses, Jpn. J. Appl. Phys., 10.1143/JJAP.25.205, 25, 2, 205-208, Vol. 25, No. 2, pp. 205-208, 1986.02.
190. H. Kitagawa, H. Nakashima, K. Hashimoto, Energy Levels and Solid Solubility of Electrically Active Cobalt in Silicon Studied by Combined Hall and DLTS Measurements, Jpn. J. Appl. Phys., 10.1143/JJAP.24.373, 24, 3, 373-374, Vol. 24, No. 3, pp. 373-374, 1985.03.
191. H. Nakashima, H. Tomokage, H. Kitagawa, K. Hashimoto, Energy Level and Solid Solubility of Cobalt in Silicon by In-Depth Profile Measurement, Jpn. J. Appl. Phys., 10.1143/JJAP.23.776, 23, 6, 776-777, Vol. 23, No. 6, pp. 776-777, 1984.06.
192. H. Nakashima, H. Tomokage, K. Hashimoto, Differential Method for Measuring Thermally Stimulated Capacitance, Jpn. J. Appl. Phys., 10.1143/JJAP.21.1385, 21, 9, 1385-1385, Vol. 21, No. 9, p. 1385, 1982.09.
193. H. Nakashima, K. Hashimoto, Barrier Height for Cobalt on Silicon, phys. stat. sol. (a), 10.1002/pssa.2210710261, 71, 2, K201-K203, Vol. 71, No. 2, pp. K201-203, 1982.05.
194. H. Tomokage, H. Nakashima, K. Hashimoto, Simple ICTS Measurement Method, Jpn. J. Appl. Phys., 10.1143/JJAP.21.805, 21, 5, 805-805, Vol. 21, No. 5, p. 805, 1982.05.
195. H. Tomokage, H. Nakashima, K. Hashimoto, Note on the Analysis of DLTS and C2-DLTS, Jpn. J. Appl. Phys., 10.1143/JJAP.21.67, 21, 1, 67-70, Vol. 21, No. 1, pp. 67-70, 1982.01.