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Makoto ARITA Last modified date:2019.06.19

Assistant Professor / Advanced Materials Physics
Department of Materials Science and Engineering
Faculty of Engineering


Graduate School
Undergraduate School


E-Mail
Academic Degree
Dr.Eng.
Field of Specialization
surface science, thin film technology
Research
Research Interests
  • Optical and electrical properties of oxide thin films
    keyword : thin film, oxide, semiconductor, scanning probe microscopy
    2000.04.
Academic Activities
Papers
1. Fabi Zhang, Haiou Li, Makoto ARITA, Qixin Guo, Ultraviolet detectors based on (GaIn)2O3 films, Optical Materials Express, 10.1364/OME.7.003769, 7, 10, 3769-3779, 2017.10.
2. Rin Haraguchi, Yuuki Yoshimatsu, Takashi Nagaoka, Makoto ARITA, EDALATI KAVEH, Zenji Horita, Electrical resistivity mapping of titanium and zirconium discs processed by high-pressure torsion for homogeneity and phase transformation evaluation, Journal of Materials Science, 10.1007/s10853-017-0916-x, 52, 6778-6788, 2017.02.
3. Fabi Zhang, Makoto ARITA, Xu Wang, Zhengwai Chen, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, Teruaki Motooka, Toward controlling the carrier density of Si doped Ga2O3 films by pulsed laser deposition, Applied Physics Letters, 10.1063/1.4962463, 109, 102105-1-102105-5, 2016.09.
4. Makoto ARITA, Kazuhisa Torigoe, Takashi Yamauchi, Takashi Nagaoka, Toru Aiso, Yasuhisa Yamashita, Teruaki Motooka, Surface band-bending and Fermi-level pinning in doped Si observed by Kelvin force microscopy, Applied Physics Letters, 10.1063/1.4870419, 104, 132103-1-132103-4, 2014.04, The workfunction change in doped Si was examined using Kelvin force microscopy in a wide range
of doping concentrations from p-type 1019 to n-type 1020 cm3 corresponding to the bulk
Fermi-level positions from near the valence-band top to conduction-band minimum. Experimental
data can be reproduced by model calculations using an appropriate surface-state density composed of
the donor- and acceptor-like gap states. These results indicate that no appreciable surface-band
bending occurs for doping concentrations less than 1014 cm3 while the bending becomes
prominent and the surface Fermi-level is eventually pinned in the midgap region as the concentration
increases to 1020 cm3..
5. Makoto Arita, Yu Tabata, Hiroki Sakamoto and Qixin Guo, Photo-electrochemical Properties of Titanium Dioxide Thin Films Prepared by Reactive RF Sputtering Method, Materials Science Forum , 750, 248, 2013.01.
6. M. Arita, H. Sakamoto, Y. Tabata, Y. Ikoma, M. Masuda, Photo-electrochemical properties of photocatalytic titanium dioxide films prepared by RF magnetron sputtering, Proceedings of International colloquium on “Recent progress in nanofabrications of MEMS and NEMS: Science and innovation technologies” , 32-35, 2011.03.
7. M. Arita, M. Yamaguchi, and M. Masuda, Electrical and Optical Properties of Germanium-Doped Zinc Oxide Thin Films, Materials Transactions, Vol.45, No.11, (2004) 3180-3183, 2004.11.
8. Effects of protium introduction on electrical and optical properties of tin-germanium oxide thin films
M. Arita H. Konishi M. Masuda and Y. Hayashi
Mater. Trans.
Vol.43 (2002)pp.26702672-..
9. M. Arita H. Konishi K. Matsuda M. Masuda and Y. Hayashi, Effects of hydrogen introduction on electrical and optical properties of Cd-doped Ge oxide and Zn oxide thin films, Mater. Trans., 10.2320/matertrans.43.1142, 43, 5, 1142-1145, Vol.43 No.5 pp.1142-1145, 2002.05.
10. M. Arita H. Obata T. Hayashi K. Okuno W.M. Shu Y Hayashi, Ion driven permeation of deuterium through iron coated with silicon oxide film, Fusion Technology, 28, 3, 1132-1137, Vol.28 No. pp.1132-1137, 1995.10.
11. M. Arita and Y. Hayashi, Photoelectrochemical properties of anodic oxide film on niobium, Materials Transactions JIM, 35, 4, 233-237, Vol.35 No.4 pp.233-237, 1994.04.
Presentations
1. Effect of surface band-bending and Fermi-level pinning on surface potential of doped Si observed by Kelvin probe force microscopy.
2. Surface potential measurement of semiconductors and oxides by using Kelvin force microscopy.
3. Makoto ARITA, Surface potential measurement and carrier density estimation for semiconductors by using Kelvin force microscopy, 2017 International Symposium on Advanced Materials and Optoelectronics, 2017.03.
4. Makoto ARITA, Photoinduced surface potential change of TiO2 thin films observed by Kelvin force microscopy, 2015 International Symposium on Advanced Materials and Optoelectronics, 2015.01.
5. Makoto ARITA, Surface band-bending and Fermi-level pinning in doped Si observed by Kelvin force Microscopy
, 2013 International Workshop on Novel Materials , 2013.09.
6. Makoto ARITA, Surface Potential Measurement of Semiconductors using Kelvin Force Microscopy, 2013 International Symposium on Advanced Materials and Synchrotron Light, 2013.05.
Membership in Academic Society
  • The Japan Society of Applied Physics
  • The Japan Society of Plasma Science and Nuclear Fusion Research
  • The Japan Institute of Light Metals
  • The Japan Institute of Metals and Materials
Educational
Other Educational Activities
  • 2017.07.
  • 2016.12.
  • 2016.01.
  • 2013.06.
  • 2011.06.
  • 2009.07.
  • 2010.07.