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Yoshifumi Ikoma Last modified date：2024.04.09

Assistant Professor / Functional Materials Science
Department of Materials Science and Engineering
Faculty of Engineering


Graduate School
Department of Materials Physics and Chemistry
Graduate School of Engineering
Undergraduate School
Department of Materials Science and Engineering
School of Engineering


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Homepage
https://kyushu-u.elsevierpure.com/en/persons/yoshifumi-ikoma
　Reseacher Profiling Tool　Kyushu University Pure
http://zaiko6.zaiko.kyushu-u.ac.jp/
Academic Degree
Doctor of Engineering
Field of Specialization
Semiconductor nanostructures, bulk nanostructured semiconductor materials, thin film growth, epitaxial growth
ORCID(Open Researcher and Contributor ID)
0000-0001-5483-464X
Total Priod of education and research career in the foreign country
00years00months
Outline Activities
1. Bulk nanostructured semiconductor materials by using giant straining process
Nanocrystalline semiconductor materials exhibit unique electrical and optical properties. We investigate the formation of bulk nanostructured semiconductor materials (Si, Ge, GaAs, etc.) by using high-pressure torsion.
2. Thin film growth by using pulse jet CVD
The formation of semiconductor multiple heterostructures on Si substrates is of great interest to those building high-performance electronic and optoelectronic devices. We have reported the epitaxial growth of ultrathin (~3 nm) SiC films and SiC/Si multilayers on Si(100) by supersonic free jet CVD. We have also investigated the formation of semiconductor nanopores by utilizing SiC/Si heteroepitaxial growth, and Si-based nanowires on Si substrates by organosilane pulse jet CVD.
Research
Research Interests
  • Elucidation of polymorphs and novel properties of SiGe developed by high-pressure phase transformations
    keyword : high-pressure phase transformation, metastable phase
    2023.04.
  • Formation of semiconductor bulk nanostructured materials by using High-Pressure Torsion
    keyword : HPT, nanocrystalline semiconductor materials
    2011.04.
  • Semiconductor nanocrystal growths by Au-catalyzed pulse jet CVD
    keyword : VLS growth
    2012.04～2013.03.
  • Semiconductor nanopore formation by utilizing SiC/Si heteroepitaxial growth
    keyword : nanopore
    2005.04～2013.03A nanometer-sized pore (nanopore) is of great interest for a possible application to molecular sensors such as DNA sequencers. The solid-state nanopore is mainly fabricated by utilizing ion beam method. However, this techniques are not suitable for mass production. We introduced the pits into the top Si layers of Silicon-on-Insulator (SOI) substrates by SiC/Si heteroepitaxy, and investigate the nanopore formation onto the thin Si layer of SOI substrates..
  • SiC/Si nanostructures by supersonic free jet CVD
    keyword : Si-based nano structures, supersonic free jet CVD
    1999.04～2013.03The formation of semiconductor quantum devices on Si substrates is of great interest to those building high-performance electronic devices. We focus on the growths of nano-scale SiC/Si multilayer structures utilizing supersonic free jet CVD.　.
Academic Activities
Papers
 Show All Papers >>
1. Yoshifumi Ikoma, Structural and Functional Properties of Si and Related Semiconducting Materials Processed by High-Pressure Torsion, Materials Transactions, 10.2320/matertrans.MT-MF2022031, 64, 7, 1346-1352, 2023.07.
2. Yoshifumi Ikoma, Kensuke Matsuda, Keigo Yoshida, Marina Takaira, Masamichi Kohno, Electric, thermal, and optical properties of severely deformed Si processed by high-pressure torsion, Journal of Applied Physics, 10.1063/5.0122826, 132, 21, 215101, 2022.12.
3. Yoshifumi Ikoma, Terumasa Yamasaki, Takahiro Shimizu, Marina Takaira, Masamichi Kohno, Qixin Guo, Martha R. McCartney, David J. Smith, Yasutomo Arai, Zenji Horita, Formation of metastable bc8 phase from crystalline Si0.5Ge0.5 by high-pressure torsion, Materials Characterization, 10.1016/j.matchar.2020.110590, 169, 110590, 2020.11.
4. Yoshifumi Ikoma, Severe Plastic Deformation of Semiconductor Materials Using High-Pressure Torsion, Materials Transactions, 10.2320/matertrans.MF201907, 60, 7, 1168-1176, 2019.07.
5. Yoshifumi Ikoma, Bumsoo Chon, Terumasa Yamasaki, Kazutoshi Takahashi, Katsuhiko Saito, Qixin Guo, and Zenji Horita, Crystal and electronic structural changes during annealing in severely deformed Si containing metastable phases formed by high-pressure torsion, Applied Physics Letters, 10.1063/1.5038160, 113, 101904, 2018.09.
6. Yoshifumi Ikoma, Kazuki Kumano, Kaveh Edalati, Martha R. McCartney, David J. Smith, Zenji Horita, High-resolution transmission electron microscopy analysis of nanograined germanium produced by high-pressure torsion, Materials Characterization, 10.1016/j.matchar.2017.08.011, 132, 132-138, 2017.10.
7. Yoshifumi Ikoma, Kazuki Kumano, Kaveh Edalati, Katsuhiko Saito, Qixin Guo, Zenji Horita, Phase transformation of germanium by processing through high-pressure torsion: strain and temperature effects, Philosophical Magazine Letters, 10.1080/09500839.2016.1266099, 97, 1, 27-34, 2017.01.
8. Yoshifumi Ikoma, Takamitsu Toyota, Yoshimasa Ejiri, Katsuhiko Saito, Qixin Guo, Zenji Horita, Allotropic phase transformation and photoluminescence of germanium nanograins processed by high-pressure torsion, Journal of Materials Science, 10.1007/s10853-015-9328-y, 51, 1, 138-143, 2016.01.
9. Yoshifumi Ikoma, Kazunori Hayano, Kaveh Edalati, Katsuhiko Saito, Qixin Guo, Zenji Horita, Toshihiro Aoki, David J. Smith, Fabrication of nanograined silicon by high-pressure torsion, Journal of Materials Science, 10.1007/s10853-014-8250-z, 49, 19, 6565-6569, 2014.10.
10. Yoshifumi Ikoma, Yoshimasa Ejiri, Kazunori Hayano, Katsuhiko Saito, Qixin Guo, Zenji Horita, Nanograin formation of GaAs by high-pressure torsion, Philosophical Magazine Letters, 10.1080/09500839.2013.852265, 94, 1, 1-8, 2014.01.
11. Yoshifumi Ikoma, Kazunori Hayano, Kaveh Edalati, Katsuhiko Saito, Qixin Guo, and Zenji Horita, Phase transformation and nanograin refinement of silicon by processing through high-pressure torsion, Applied Physics Letters , 101, 12, 121908, 2012.09.
Presentations
 Show All Presentations >>
1. Yoshifumi Ikoma, Impact of high-pressure torsion on crystal structural and functional properties of Si and Ge, The 11th Pacific Rim International Conference on Advanced Materials and Processing (PRICM11), 2023.11.
2. Yoshifumi Ikoma, Development of novel semiconductor materials using process of high-pressure torsion, The 9th International Conference on Electronics, Communications and Networks (CECNet2019), 2019.10.
3. Yoshifumi Ikoma, Zenji Horita, Structural and Functional Properties of Ultrafine-Grained Si Produced by High-Pressure Torsion, The 10th Pacific Rim International Conference on Advanced Materials and Processing (PRICM10), 2019.08.
4. Yoshifumi Ikoma, Bumsoo Chon, Terumasa Yamasaki, Katsuhiko Saito, Qixin Guo, Martha R. McCartney, David J. Smith, Zenji Horita, Microstructural and Optical Properties of Nanograined Si Processed by High-Pressure Torsion
, The 5th International Conference on Nanomechanics and Nanocomposites (ICNN5), 2018.08.
5. Yoshifumi Ikoma, Terumasa Yamasaki, Katsuhiko Saito, Qixin Guo, Zenji Horita, Production of bulk nanograined Si by high-pressure torsion at various pressures, TMS2018 147th Annual Meeting & Exhibition, 2018.03.
6. Yoshifumi Ikoma, Kazuki Kumano, Kaveh Edalati, Martha R. McCartney, David J. Smith, Zenji Horita, TEM observations of Ge processed by high-pressure torsion, International Workshop on Giant Straining Process for Advanced Materials (GSAM2017), 2017.09.
7. Yoshifumi Ikoma, Kazuki Kumano, Bumsoo Chon, Kaveh Edalati, Martha R. McCartney, David J. Smith, Zenji Horita, Microstructure Analysis of Bulk Nanograined Germanium Obtained by High-Pressure Torsion: Temperature Dependence, The 15th International Conference on Advanced Materials (IUMRS-ICAM2017), 2017.08.
8. Yoshifumi Ikoma, Kazuki Kumano, Bumsoo Chon, Kaveh Edalati, Martha R. McCartney, David J. Smith, Zenji Horita, HRTEM observations of nanograined germanium produced by high-pressure torsion, The 7th International Conference on Nanomaterials by Severe Plastic Deformation, 2017.07.
9. Yoshifumi Ikoma, Yoshimasa Ejiri, Katsuhiko Saito, Qixin Guo, Zenji Horita, Production of nanograined ZnTe by severe plastic deformation under high pressure, 9th Pacific Rim International Conference on Advanced Materials and Processing (PRICM9), 2016.08.
10. Yoshifumi Ikoma, HPT processing of germanium at cryogenic temperature, International Workshop on Giant Straining Process for Advanced Materials (GSAM2016), 2016.07.
11. Yoshifumi Ikoma, Takamitsu Toyota, Katsuhiko Saito, Qixin Guo, Zenji Horita, Production of Nanograined Ge Using Severe Plastic Deformation under High Pressure, TMS2016 145th ANNUAL MEETING & EXHIBITION, 2016.02.
12. Yoshifumi Ikoma, Katsuhiko Saito, Qixin Guo, Zenji Horita, Formation of metastable phases and nanograined silicon by severe plastic deformation under high pressure, 11th China SoG Silicon and PV Power Conference, 2015.11.
13. Y. Ikoma, Formation of metastable phases and nanograins of Si and Ge by high-pressure torsion, International Workshop on Giant Straining Process for Advanced Materials (GSAM2015), 2015.09.


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