Kyushu University Academic Staff Educational and Research Activities Database
Researcher information
KUNGEN TEII Last modified date:2013.10.17

Graduate School
Undergraduate School

Academic Degree
Ph. D
Field of Specialization
Plasma Processing, Materials Engineering
Outline Activities
Keywords: Electrical and electronic materials, Ultrahard materials, Biomaterials, Nanostructured materials, Plasma engineering, Reactive plasmas, Diamond, Nanocarbon, Cubic boron nitride, Cemented carbide, Semiconductor processing, High-temperature device, Mass spectrometry, Electrostatic probe, Electron field emitter, Cutting tool, Mold
Research Interests
  • Nanostructured carbon materials, Electron emitters
    keyword : Nanocarbon, Nanodiamond, Amorphous carbon, Vacuum microelectronics, Electron source, Tunneling effect, Heterostructure, Electron affinity, Composite film, Ultrathin film
  • Wide-gap semiconductors, Power electronics
    keyword : Diamond, Boron nitride, Silicon Carbide, Crystal growth, Epitaxy, High-temperature devices, Power devices, Doping, Semiconductor processes
  • Super hard coatings, Biocoatings
    keyword : Super hard materials, Biomaterials, Implants, Biocompatibility, Nitride, DLC, Cemented carbide, Transition metals, High-speed steels, Cutting tools, Mold, Tribology
  • Plasma processing
    keyword : Plasma CVD, Sputtering, Mass spectrometry, Electrostatic probe measurement, Optical spectroscopy
Academic Activities
1. S. Matsumoto and K. Teii, Kogyo Zairyo "Superhard, high-crystallinity cubic boron nitride films", Vol. 57, No. 1, pp. 42-43(2009)..
1. J.-S. Wu, KUNGEN TEII, J. P. Chu, C.-C. Hsu,Special Issue on Basics and Applications of Plasma Technology,IEEE Transactions on Plasma Science Vol. 41, pp. 2574-2575 ,2013.09.
2. K. Teii,High Performance Field Emission from Carbon Nanowalls and Carbon Nanowall/Nanocrystalline Diamond Composites,IEEJ Electrical Insulation News in Asia, No. 18, 43-44頁(2011),2011.11.
3. K. Teii, M. Hori, M. Ito, T. Goto, N. Ishii,Study on Polymeric Neutral Species in High-Density Fluorocarbon Plasmas,J. Vac. Sci. Technol. A, Vol. 18, pp. 1-9,2000.01.
1. KUNGEN TEII, T. Ikeda,Rectification Properties of Nanocrystalline Diamond/Silicon p-n Heterojunction Diodes,J. Appl. Phys.,Vol. 114, 093705,2013.09.
2. KUNGEN TEII, T. Hori, Y. Mizusako, S. Matsumoto,Origin of Rectification in Boron Nitride Heterojunctions to Silicon,ACS Appl. Mater. Interfaces,Vol. 5, pp. 2535-2539,2013.04.
3. K. Teii and S. Matsumoto,Direct Deposition of Cubic Boron Nitride Films on Tungsten Carbide-Cobalt,ACS Appl. Mater. Interfaces,Vol. 4, pp. 5249-5255,2012.10.
4. K. Teii and S. Matsumoto,Low Threshold Field Emission from High-Quality Cubic Boron Nitride Films,J. Appl. Phys.,Vol. 111, 093728,2012.05.
5. K. Teii, S. Shimada, M. Nakashima, A. T. H. Chuang,Synthesis and Electrical Characterization of n-Type Carbon Nanowalls,J. Appl. Phys.,Vol. 106, 084303,2009.10.
6. T. Ikeda and K. Teii,Origin of Low Threshold Field Emission from Nitrogen-Incorporated Nanocrystalline Diamond Films,Appl. Phys. Lett.,Vol. 94, 143102,2009.04.
7. T. Ikeda and K. Teii,Origin of Reverse Leakage Current in n-Type Nanocrystalline Diamond/p-Type Silicon Heterojunction Diodes,Appl. Phys. Lett.,Vol. 94, 072104,2009.02.
8. T. Ikeda, K. Teii, C. Casiraghi, J. Robertson, A. C. Ferrari,Effect of the Sp2 Carbon Phase on n-Type Conduction in Nanodiamond Films,J. Appl. Phys.,Vol. 104, 073720,2008.10.
9. K. Teii, S. Matsumoto, J. Robertson,Electron Field Emission from Nanostructured Cubic Boron Nitride Islands,Appl. Phys. Lett.,Vol. 92, 013115,2008.01.
10. K. Teii, R. Yamao, T. Yamamura, S. Matsumoto,Synthesis of Cubic Boron Nitride Films with Mean Ion Energies of a Few eV,J. Appl. Phys.,Vol. 101, 033301,2007.02.
11. K. Teii, M. Hori, T. Goto,Diagnostic and Analytical Study on a Low-Pressure Limit of Diamond Chemical Vapor Deposition in Inductively Coupled CO-CH4-H2 Plasmas,J. Appl. Phys.,Vol.95,No.8,Vol. 95, pp. 4463-4470.,2004.05.
1. Plasma Deposition and Applications of Cubic Boron Nitride Films (INVITED), K. Teii, J. H.C. Yang, S. Matsumoto, IUMRS-International Conference on Electronic Materials 2012, Japan, 2012..
2. Plasma Deposition and Electrical Characterization of Wide-Gap Materials for High-Temperature Condition (INVITED), K. Teii, 7th Asia-Pacific International Symposium on the Basic and Application of Plasma Technology, Taiwan, 2012..
3. Plasma Deposition of Wide-Gap Materials for High-Temperature Condition (INVITED), K. Teii, 14th International Workshop of Advanced Plasma Processing and Diagnostics/2nd Workshop for NU- SKKU Joint Institute for Plasma-Nano Materials, Fukuoka, 2012..
4. Synthesis and Electrical Properties of Cubic Boron Nitride Films by Low-Energy Ion-Assisted Deposition, K. Teii and S. Matsumoto, 5th International Conference on New Diamond and Nano Carbons, Shimane, 2011..
5. Growth and Field Emission Properties of Boron Nitride Island Films by Low-Energy Ion-Assisted Deposition, K. Teii, Y. Utoda, R. Yamao, and S. Matsumoto, Materials Research Society Fall Meeting, Boston, 2010..
6. Synthesis and electrical properties of cubic boron nitride films by plasma-enhanced chemical vapor deposition under low-energy ion bombardment (INVITED), K. Teii and S. Matsumoto, 6th Asia-Pacific International Symposium on the Basic and Application of Plasma Technology, Taiwan, 2009..
7. Plasma Enhanced Deposition of Cubic Boron Nitride Films under Ultralow-Energy Ion Impact: Structural Evolution and Electrical Properties (INVITED), K. Teii and S. Matsumoto, 35th International Conference on Metallurgical Coatings and Thin Films, USA, 2008..
8. Phase Control and Electrical Properties of Undoped and Nitrogen-Doped Nanodiamond Films Deposited from Ar-Rich Microwave Plasmas, T. Ikeda, K. Takeguchi, K. Teii, 18th International Symposium on Plasma Chemistry, Japan, 2007..
9. Diagnostics of Radicals and Formation of Microcrystalline Diamond in a Low-Pressure Inductively Coupled Plasma (INVITED), M. Hori, K. Teii, T. Goto, 9th International Symposium on Advanced Materials, Japan, 2002..
Membership in Academic Society
  • Materials Research Society