九州大学 研究者情報
論文一覧
堤井 君元(つつい くんげん) データ更新日:2019.07.19

准教授 /  総合理工学研究院 エネルギー科学部門 電気理工学


原著論文
1. T. Nakakuma, K. Teii, S. Matsumoto, Lowering of the Substrate Bias Voltage for Deposition of Cubic Boron Nitride in Microwave Plasma, IEEE Trans. Plasma Sci., Vol. 47, pp. 1205-1209, 2019.02.
2. M. Torigoe, Y. Kamimura, K. Teii, S. Matsumoto, Effect of Low-Energy Ion Impact on the Structure of Hexagonal Boron Nitride Films Studied in Surface-Wave Plasma, Surf. Interface Anal., Vol. 51, pp. 126-130, 2019.01.
3. K. Ota, Y. Kato, K. Teii, Formation of Nanocrystalline Diamond Cones by Reactive Ion Etching in Microwave Plasma for Enhancing Field Emission, Jpn. J. Appl. Phys., Vol. 58, 016003, 2019.01.
4. K. Ota, Y. Kaneko, K. Terada, Y. Kato, K. Teii, Field Emission Characteristics of Metal-Coated Nanocrystalline Diamond Films, ECS J. Solid State Sci. Technol., Vol. 7, pp. 369-373, 2018.07.
5. K. Teii, S. Kawamoto, S. Fukui, S. Matsumoto, Electrical Transport and Capacitance Characteristics of Metal-Insulator-Metal Structures using Hexagonal and Cubic Boron Nitride Films as Dielectrics, J. Appl. Phys., Vol. 123, 145701, 2018.04.
6. S. Kawamoto, T. Nakakuma, K. Teii, S. Matsumoto, Leakage Current Characteristics of Thick Cubic Boron Nitride Films Deposited on Titanium, J. Appl. Phys., Vol. 122, 225108, 2017.12.
7. N. Shimoda, Y. Kato, K. Teii, Electrical Contacts to Nanocrystalline Diamond Films Studied at High Temperatures, J. Appl. Phys., Vol. 120, 235706, 2016.12.
8. M. Torigoe, K. Teii, S. Matsumoto, Low-Energy Ion-Assisted Deposition of Boron Nitride Films in Surface-Wave Plasma, IEEE Trans. Plasma Sci., Vol. 44, pp. 3219-3222, 2016.12.
9. K. Teii, S. Kawakami, S. Matsumoto, Superhydrophilic Cubic Boron Nitride Films, RSC Adv., Vol. 6, pp. 87905-87909, 2016.09.
10. K. Teii, Y. Mizusako, T. Hori, S. Matsumoto, Thermal Stability of Boron Nitride/Silicon p-n Heterojunction Diodes, J. Appl. Phys., Vol. 118, 155102, 2015.10.
11. K. Teii, H. Ito, N. Katayama, S. Matsumoto, Effect of the Hexagonal Phase Interlayer on Rectification Properties of Boron Nitride Heterojunctions to Silicon, J. Appl. Phys., Vol. 117, 055710, 2015.02.
12. K. Teii, S. Matsumoto, Impact of Low-Energy Ions on Plasma Deposition of Cubic Boron Nitride, Thin Solid Films, Vol. 576, pp. 50-54, 2015.02.
13. R.-C. Hsiao, T.-L. Sung, C.-M. Liu, S. Teii, S. Ono, K. Teii, K. Ebihara, Numerical Study on Heat Flow during Catalytic Dissociation of Ozone in a Dielectric Barrier Discharge Ozonizer, IEEE Trans. Plasma Sci., Vol. 43, pp. 665-669, 2015.02.
14. K. Teii, Plasma Deposition of Diamond at Low Pressures: A Review, IEEE Trans. Plasma Sci., Vol. 42, pp. 3862-3869, 2014.12.
15. T.-L. Sung, R.-C. Hsiao, C.-M. Liu, S. Teii, H.-P. Jhou, K. Teii, S. Ono, K. Ebihara, Direct Measurement of Metal Surface Temperature during Catalytic Dissociation of Ozone for Sensor Application, IEEE Trans. Plasma Sci., Vol. 42, pp. 3842-3846, 2014.12.
16. R.-C. Hsiao, T.-L. Sung, C.-M. Liu, S. Teii, T.-C. Chan, S. Ono, K. Teii, C.-C. Yang, S.-C. Zeng, Hydrophilic Stability of Plastic Surfaces Treated in Low- and Atmospheric-Pressure Radio-Frequency Plasmas, IEEE Trans. Plasma Sci., Vo. 42, pp. 3837-3841, 2014.12.
17. T.-L. Sung, S. Matsumura, K. Teii, S. Teii, Self-Compensated Standing Wave Probe for Characterization of Radio-Frequency Plasmas, Rev. Sci. Instrum., Vol. 85, 063507, 2014.06.
18. J. H.C. Yang, S. Kawakami, K. Teii, S. Matsumoto, Enhanced Wettability of Cubic Boron Nitride Films by Plasma Treatment, Mater. Sci. Forum, Vol. 783-786, pp. 2051-2055, 2014.05.
19. M. Goto, R. Amano, N. Shimoda, Y. Kato, K. Teii, Rectification Properties of n-Type Nanocrystalline Diamond Heterojunctions to p-Type Silicon Carbide at High Temperatures, Appl. Phys. Lett., Vol. 104, 153113, 2014.04.
20. R.-C. Hsiao, T.-L. Sung, C.-M. Liu, H.-T. Tseng, S. Teii, K. Teii, S. Ono, K. Ebihara, Surface-Enhanced Ozone Dissociation in Gas Flow Downstream of a Dielectric Barrier Discharge Ozonizer Studied by Using Catalytic Probes, Vacuum, Vol. 101, pp. 345-349, 2014.04.
21. K. Teii, T. Ikeda, Rectification Properties of Nanocrystalline Diamond/Silicon p-n Heterojunction Diodes, J. Appl. Phys., Vol. 114, 093705, 2013.09.
22. K. Teii, T. Hori, Y. Mizusako, S. Matsumoto, Origin of Rectification in Boron Nitride Heterojunctions to Silicon, ACS Appl. Mater. Interfaces, Vol. 5, pp. 2535-2539, 2013.04.
23. T.-L. Sung, S. Teii, C.-M. Liu, R.-C. Hsiao, P.-C. Chen, Y.-H. Wu, C.-K. Yang, K. Teii, S. Ono, K. Ebihara, Effect of Pulse Power Characteristics and Gas Flow Rate on Ozone Production in a Cylindrical Dielectric Barrier Discharge Ozonizer, Vacuum, Vol. 90, pp. 65-69, 2013.04.
24. K. Teii, S. Matsumoto, Direct Deposition of Cubic Boron Nitride Films on Tungsten Carbide-Cobalt, ACS Appl. Mater. Interfaces, Vol. 4, pp. 5249-5255, 2012.10.
25. T.-L. Sung, S. Teii, C.-M. Liu, R.-C. Hsiao, P.-C. Chen, Y.-H. Wu, C.-K. Yang, S. Ono, K. Ebihara, K. Teii, Surface Catalytic Effect of Electrode Materials on Ozone Dissociation in a Cylindrical Dielectric Barrier Discharge Ozonizer, IEEE Trans. Plasma Sci., Vol. 40, pp. 2751-2755, 2012.10.
26. J. H.C. Yang and K. Teii, Mechanisim of Enhanced Wettability of Nanocrystalline Diamond Films by Plasma Treatment, Thin Solid Films, Vol. 520, pp. 6566-6570, 2012.08.
27. T.-L. Sung, J. H.-C. Yang, K. Teii, S. Teii, C.-M. Liu, W.-Y. Tseng, L.-D. Lin, S. Ono, Wettability of Amorphous Diamond-Like Carbons Deposited on Si and PMMA in Pulse-Modulated Plasmas, IEEE Trans. Plasma Sci., Vol. 40, pp. 1837-1842, 2012.07.
28. C. Y. Cheng and K. Teii, Control of the Growth Regimes of Nanodiamond and Nanographite in Microwave Plasmas, IEEE Trans. Plasma Sci., Vol. 40, pp. 1783-1788, 2012.07.
29. C. Y. Cheng, M. Nakashima, K. Teii, Low Threshold Field Emission from Nanocrystalline Diamond/Carbon Nanowall Composite Films, Diamond Relat. Mater., Vol. 27-28, pp. 40-44, 2012.07.
30. K. Teii, S. Matsumoto, Low Threshold Field Emission from High-Quality Cubic Boron Nitride Films, J. Appl. Phys., Vol. 111, 093728, 2012.05.
31. R. Amano, M. Goto, Y. Kato, K. Teii, Fabrication of 4H-SiC/Nanocrystalline Diamond pn Junctions, Mater. Sci. Forum, Vol. 717-720, pp. 1009-1012, 2012.05.
32. J. H.C. Yang and K. Teii, Wettability of Plasma-Treated Nanocrystalline Diamond Films, Diamond Relat. Mater., Vol. 24, pp. 54-58, 2012.04.
33. Y. Kato, M. Goto, R. Sato, K. Yamada, A. Koga, K. Teii, C. Srey, S. Tanaka, Formation of Epitaxial 3C-SiC Layers by Microwave Plasma-Assisted Carbonization, Surf. Coat. Technol., Vol. 206, pp. 990-993, 2011.11.
34. T.-L. Sung, Y.-A. Chao, C.-M. Liu, K. Teii, S. Teii, C.-Y. Hsu, Deposition of Amorphous Hydrogenated Carbon Films on Si and PMMA by Pulsed Direct-Current Plasma CVD, Thin Solid Films, Vol. 519, pp. 6688-6692, 2011.08.
35. M. Goto, A. Koga, K. Yamada, Y. Kato, K. Teii, Fabrication of n-Type Nanocrystalline Diamond/3C-SiC/p-Si(001) Junctions, Mater. Sci. Forum, Vol. 679-680, pp. 524-527, 2011.03.
36. A. Koga, K. Teii, M. Goto, K. Yamada, Y. Kato, Growth and Electrical Properties of 3C-SiC/Nanocrystalline Diamond Layered Films, Jpn. J. Appl. Phys., Vol. 50, 01AB08, 2011.01.
37. K. Teii, T. Hori, S. Matsumoto, Enhanced Deposition of Cubic Boron Nitride Films on Roughened Silicon and Tungsten Carbide-Cobalt Surfaces, Thin Solid Films, Vol. 519, pp. 1817-1820, 2011.01.
38. K. Teii and S. Matsumoto, Feasibility Study on Cubic Boron Nitride Coated Glass Press Molds, Diamond Relat. Mater., Vol. 19, pp. 1415-1418, 2010.11.
39. S. Shimada, K. Teii, M. Nakashima, Low Threshold Field Emission from Nitrogen-Incorporated Carbon Nanowalls, Diamond Relat. Mater., Vol. 19, pp. 956-959, 2010.07.
40. K. Teii and M. Nakashima, Synthesis and Field Emission Properties of Nanocrystalline Diamond/Carbon Nanowall Composite Films, Appl. Phys. Lett., Vol. 96, 023112, 2010.01.
41. K. Teii, R. Yamao, S. Matsumoto, Effect of Cubic Phase Evolution on Field Emission Properties of Boron Nitride Island Films, J. Appl. Phys., Vol. 106, 113706, 2009.12.
42. K. Teii, S. Shimada, M. Nakashima, A. T. H. Chuang, Synthesis and Electrical Characterization of n-Type Carbon Nanowalls, J. Appl. Phys., Vol. 106, 084303, 2009.10.
43. C.-M. Liu, K. Teii, T.-L. Sung, K. Ting, S. Teii, Role of Hydrogen in Ultrananocrystalline Diamond Deposition from Argon-Rich Microwave Plasmas, IEEE Trans. Plasma Sci., Vol. 37, pp. 1172-1177, 2009.07.
44. T. Ikeda and K. Teii, Origin of Low Threshold Field Emission from Nitrogen-Incorporated Nanocrystalline Diamond Films, Appl. Phys. Lett., Vol. 94, 143102, 2009.04.
45. T. Ikeda and K. Teii, Origin of Reverse Leakage Current in n-Type Nanocrystalline Diamond/p-Type Silicon Heterojunction Diodes, Appl. Phys. Lett., Vol. 94, 072104, 2009.02.
46. T. Ikeda, K. Teii, C. Casiraghi, J. Robertson, A. C. Ferrari, Effect of the Sp2 Carbon Phase on n-Type Conduction in Nanodiamond Films, J. Appl. Phys., Vol. 104, 073720, 2008.10.
47. K. Teii, S. Matsumoto, J. Robertson, Electron Field Emission from Nanostructured Cubic Boron Nitride Islands, Appl. Phys. Lett., Vol. 92, 013115, 2008.01.
48. K. Teii and T. Ikeda, Conductive and Resistive Nanocrystalline Diamond Films Studied by Raman Spectroscopy, Diamond Relat. Mater., Vol. 16, pp. 753-756, 2007.04.
49. K. Teii, T. Ikeda, Effect of Enhanced C2 Growth Chemistry on Nanodiamond Film Deposition, Appl. Phys. Lett., Vol. 90, 111504, 2007.03.
50. K. Teii, R. Yamao, T. Yamamura, S. Matsumoto, Synthesis of Cubic Boron Nitride Films with Mean Ion Energies of a Few eV, J. Appl. Phys., Vol. 101, 033301, 2007.02.
51. H. Ito, K. Teii, M. Ito. M. Hori, Formation of Microcrystalline Diamond using a Low-Pressure Inductively Coupled Plasma Assisted by Thermal Decomposition of di-t-Alkyl Peroxide, Diamond Relat. Mater., Vol. 16, pp. 393-396., 2007.01.
52. K. Teii and S. Matsumoto, Local Retarding Field for Ions towards a Positively Biased Substrate in Plasma and its Application to Soft Ion-Bombardment Processing, J. Appl. Phys., Vol. 101, 013302, 2007.01.
53. K. Teii and T. Ikeda, Polymerization in Nanocrystalline Diamond Films by Oxygen Incorporation, Plasma Process. Polym., Vol. 3, pp. 708-712, 2006.11.
54. K. Teii, Y. Kouzuma, K. Uchino, In Vacuo Substrate Pretreatments for Enhancing Nanodiamond Formation in Electron Cyclotron Resonance Plasma, J. Vac. Sci. Technol., A Vol. 24, pp. 1802-1806, 2006.09.
55. T. Ikeda and K. Teii, Comparative Study on Nanocrystalline Diamond Growth from Acetylene and Methane, Diamond Relat. Mater., Vol. 15, pp. 635-638, 2006.04.
56. K. Teii, T. Ikeda, A. Fukutomi, K. Uchino, Effect of Hydrogen Plasma Exposure on the Amount of trans-Polyacetylene in Nanocrystalline Diamond Films, J. Vac. Sci. Technol., B Vol. 24, pp. 263-266, 2006.01.
57. Y. Kouzuma, K. Teii, S. Mizobe, K. Uchino, K. Muraoka, Time Dependence of Nucleation Density and Crystallinity of Diamond in Low-Pressure, Ion-Enhanced Deposition, Diamond Relat. Mater., 10.1016/j.diamond.2003.10.071, 13, 4-8, 656-660, 2004.05.
58. K. Teii, M. Hori, T. Goto, Diagnostic and Analytical Study on a Low-Pressure Limit of Diamond Chemical Vapor Deposition in Inductively Coupled CO-CH4-H2 Plasmas, J. Appl. Phys., 10.1063/1.1686900, 95, 8, 4463-4470, 2004.05.
59. K. Teii, Prediction of a Threshold Density of Atomic Hydrogen for Nanocrystalline Diamond Growth at Low Pressures, Chem. Phys. Lett., 10.1016/j.cplett.2004.03.096, 389, 4-6, 251-254, 2004.05.
60. Y. Kouzuma, K. Teii, K. Uchino, K. Muraoka, Diamond Nucleation Density as a Function of Ion-Bombardment Energy in Electron Cyclotron Resonance Plasma, Phys. Rev. B, 10.1103/PhysRevB.68.064104, 68, 6, 064104, 2003.08.
61. K. Teii, H. Yoshioka, S. Ono, S. Teii, Argon Dilution Effects on Diamond Deposition in Electron Cyclotron Resonance Plasma: A Double Probe Study, Thin Solid Films, 10.1016/S0040-6090(03)00669-2, 437, 1-2, 63-67, 2003.07.
62. K. Teii, M. Mizumura, S. Matsumura, S. Teii, Time- and Space-Resolved Electric Potentials in a Parallel-Plate Radio-Frequency Plasma, J. Appl. Phys., 10.1063/1.1568158, Vol. 93, pp. 5888-5892, 2003.05.
63. K. Teii, M. Hori, T. Goto, Ion-to-CH3 Flux Ratio in Diamond Chemical-Vapor Deposition, J. Appl. Phys., 10.1063/1.1506384, 92, 7, 4103-4108, 2002.10.
64. Y. Kouzuma, K. Teii, K. Uchino, K. Muraoka, Diamond Nucleation Enhancement on Si by Controlling Ion-Bombardment Eneragy in Electron Cyclotron Resonance Plasma, Jpn. J. Appl. Phys., 10.1143/JJAP.41.5749, 41, 9, 5749-5750, 2002.09.
65. K. Teii, Soft Ion Impact for Surface Activation during Diamond Chemical-Vapor Deposition on Diamond and Silicon, Phys. Rev. B, 64, 12, 125327, 2001.09.
66. K. Teii, M. Hori, T. Goto, Dual-Electrode Biasing for Controlling Ion-to-Adatom Flux Ratio during Ion-Assisted Deposition of Diamond, J. Appl. Phys., 10.1063/1.1359159, 89, 9, 4714-4718, 2001.05.
67. K. Teii, M. Hori, T. Goto, Negative Bias Dependence of Sulfur and Fluorine Incorporation in Diamond Films Etched by an SF6 Plasma, J. Electrochem. Soc., Vol. 148, pp. G55-G58, 2001.02.
68. K. Teii, M. Hori, T. Goto, Codeposition on Diamond Film Surface during Reactive Ion Etching in SF6 and O2 Plasmas, J. Vac. Sci. Technol., A Vol. 18, pp. 2779-2784, 2000.11.
69. H. Ito, K. Teii, H. Funakoshi, M. Hori, T. Goto, M. Ito, T. Takeo, Loss Kinetics of Carbon Atoms in Low-Pressure High-Density Plasmas, J. Appl. Phys., Vol. 88, pp. 4537-4541, 2000.10.
70. K. Teii, M. Hori, T. Goto, N. Ishii, Precursors of Fluorocarbon Film Growth Studied by Mass Spectrometry, J. Appl. Phys., Vol. 87, pp. 7185-7190, 2000.05.
71. K. Teii, H. Ito, M. Hori, T. Takeo, T. Goto, Kinetics and Role of C, O, and OH in Low-Pressure Nanocrystalline Diamond Growth, J. Appl. Phys., Vol. 87, pp. 4572-4579, 2000.05.
72. K. Teii, M. Hori, M. Ito, T. Goto, N. Ishii, Study on Polymeric Neutral Species in High-Density Fluorocarbon Plasmas, J. Vac. Sci. Technol., A Vol. 18, pp. 1-9, 2000.01.
73. H. Ito, K. Teii, M. Ishikawa, M. Ito, M. Hori, T. Takeo, T. Kato, T, Goto, Diamond Deposition and Behavior of Atomic Carbon Species in a Low-Pressure Inductively Coupled Plasma, Jpn. J. Appl. Phys., Part 1 Vol. 38, pp. 4504-4507, 1999.07.
74. K. Teii, Independent Control of Ion Energy and Flux in Plasma-Enhanced Diamond Growth, Appl. Phys. Lett., Vol. 74, pp. 4067-4069, 1999.06.
75. K. Teii and T. Yoshida, Lower Pressure Limit of Diamond Growth in Inductively Coupled Plasma, J. Appl. Phys., Vol. 85, pp. 1864-1870, 1999.02.
76. K. Teii, Diagnostics of the Diamond-Depositing Inductively Coupled Plasma by Electrostatic Probes and Optical Emission Spectroscopy, J. Vac. Sci. Technol., A Vol. 17, pp. 138-143, 1999.01.
77. K. Teii and T. Yoshida, Structure Changes in a-C:H Films in Inductive CH4/Ar Plasma Deposition, Thin Solid Films, Vol. 333, pp. 103-107, 1998.11.
78. 堤井 君元、吉田 豊信, ダイヤモンド合成用低圧誘導結合プラズマのプローブ測定, 電気学会論文誌, A Vol. 118, pp. 895-896, 1998.07.
79. K. Teii and T. Yoshida, Positive Bias Effects on the Growth of Diamond at Pressures below 100 mTorr, Thin Solid Films, Vol. 316, pp. 24-28, 1998.03.

九大関連コンテンツ

pure2017年10月2日から、「九州大学研究者情報」を補完するデータベースとして、Elsevier社の「Pure」による研究業績の公開を開始しました。
 
 
九州大学知的財産本部「九州大学Seeds集」