九州大学 研究者情報
発表一覧
柿本 浩一(かきもと こういち) データ更新日:2019.06.20

教授 /  応用力学研究所 新エネルギー力学部門 ナノメカニックス分野


学会発表等
1. 柿本 浩一, 結晶成長における実験とシミュレーションのシナジー効果:欠陥をどこまで予測可能か, 第66回応用物理学会 春季学術講演会, 2019.03.
2. 大河内 勇斗、長川 健太、洗平 昌晃、草場 彰、寒川 義裕、柿本 浩一、白石 賢二, 気相反応から考えるGaN MOVPEにおける炭素混入機構, 第66回応用物理学会 春季学術講演会, 2019.03.
3. 富澤 巧、川上 賢人、櫻井 照夫、草場 彰、岡本 直也、芳松 克則、醍醐 佳明、水島 一郎、依田 孝、寒川 義裕、柿本 浩一、白石 賢二, 縦型結晶成長装置におけるGaN MOVPEシミュレーション, 第66回応用物理学会 春季学術講演会, 2019.03.
4. 榊原 聡真、川上 賢人、高村 昴、洗平 昌晃、草場 彰、岡本 直也、芳松 克則、寒川 義裕、柿本 浩一、白石 賢二, 化学反応を含むGaN結晶成長流体シミュレーション手法の開発, 第66回応用物理学会 春季学術講演会, 2019.03.
5. 川上 賢人、高村 昴、草場 彰、芳松 克則、岡本 直也、寒川 義裕、柿本 浩一、白石 賢二, MOVPE法のGaN結晶成長3次元マルチフィジックスシミュレーション, 第66回応用物理学会 春季学術講演会, 2019.03.
6. 柿本 浩一、Liu Xin、中野 智、宮村 佳児、原田 博文、西澤 伸一, 不均一横磁場下のSi-CZ結晶成長における酸素移動現象の理解, 第66回応用物理学会 春季学術講演会, 2019.03.
7. 河村 貴宏、竹田 浩基、北本 啓、今西 正幸、吉村 政志、森 勇介、森川 良忠、寒川 義裕、柿本 浩一, キンクおよびステップ構造を持つGaN極性表面におけるO不純物の脱離エネルギーの解析, 第66回応用物理学会 春季学術講演会, 2019.03.
8. 宮村 佳児、原田 博文、中野 智、西澤 伸一、柿本 浩一, CZ炉内のCO濃度(III), 第66回応用物理学会 春季学術講演会, 2019.03.
9. XueXin Liu、Xue-Feng Han、Satoshi Nakano、Hirofumi Harada、Yoshiji Miyamura、Koichi Kakimoto, Dynamic global modeling of the oxygen segregation during the pulling process of Czochralski silicon crystal growth, 第66回応用物理学会 春季学術講演会, 2019.03.
10. Koichi Kakimoto, Collaboration of Numerical and Experimental studies on Crystal Growth Processes, International Symposium on Modeling of Crystal Growth Processes and Devices(MCGPD-2019), 2019.02.
11. Koichi Kakimoto, Crystal growth for power devices and PVs, ISCGSCT2017, 2018.12.
12. 大河内勇斗、長川健太、洗平昌晃、草場彰、寒川義裕、柿本浩一、白石賢二, GaN結晶成長過程における炭素混入メカニズムの理論的解明, 第47回結晶成長国内会議(JCCG-47), 2018.11.
13. 韓 学峰, 劉 シン, 中野 智, 原田 博文, 宮村 佳児, 柿本 浩一, Numerical simulation on asymmetric interface of floating zone (FZ) for silicon crystal growth, 第47回結晶成長国内会議(JCCG-47), 2018.11.
14. 井手 智朗,中野 智, 原田 博文, 宮村佳児, 柿本 浩一, 格子間酸素の転位固着効果を考慮したシリコン単結晶中転位密度の数値解析, 第47回結晶成長国内会議(JCCG-47), 2018.11.
15. 劉 しん,原田 博文,宮村 佳児,韓 学峰,中野 智,西澤 伸一,柿本 浩一, Numerical analyses and experimental validations on transport and control of carbon in in Czochralski silicon crystal growth, 第47回結晶成長国内会議(JCCG-47), 2018.11.
16. 川上賢人、高村昴、草場彰、芳松克則、岡本直也、寒川義裕、柿本浩一、白石賢二, 表面再構成構造を考慮したGaN MOVPEのマルチフィジックス流動シミュレーション, 第47回結晶成長国内会議(JCCG-47), 2018.11.
17. Koich Kakimoto, Numerical investigation and experimental validation of crystal growth of semiconductors, International Symposium & School on Crystal Growth Fundamentals, 2018.11.
18. Tomoro Ide, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Masato Imai, Koichi Kakimoto, Numerical simulation of effect of interstitial oxygen on dislocation density in Si single crystal, The 8th Forum on the Science and Technology of Silicon Materials 2018, 2018.11.
19. Xue-Feng Han, Xin Liu, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura,and Koichi Kakimoto, 3D Numerical Analysis on Asymmetric Interface of Floating Zone (FZ) for Silicon Crystal Growth, The 8th Forum on the Science and Technology of Silicon Materials 2018, 2018.11.
20. Xin Liu, Hirofumi Harada, Yoshiji Miyamura, Xue-Feng Han, Satoshi Nakano, Shin-ichi Nishizawa, and Koichi Kakimoto, Numerical analyses and experimental validations on transport and control of carbon in CZ-Si crystal growth, The 8th Forum on the Science and Technology of Silicon Materials 2018, 2018.11.
21. Xin Liu, Hirofumi Harada, Yoshiji Miyamura, Xue-Feng Han, Satoshi Nakano, Shin-ichi Nishizawa, Koichi Kakimoto, Numerical Analyses and Experimental Validations on Transport and Control of Carbon in Czochralski Silicon Crystal Growth, IWMCG-9, 2018.10.
22. Ryusuke Yokoyama, Tsuyoshi Nakamura, Toshiyuki Fujiwara, Koichi Kakimoto, Melt Flow Behavior of Industrial Scale Silicon Czochralski Growth with a Transverse Magnetic Field, IWMCG-9, 2018.10.
23. T. Ide, S. Nakano, H. Harada, Y. Miyamura, M. Imai, K. Kakimoto, Effect of Oxygen on Dislocation Generation in Si Single Crystal, IWMCG-9, 2018.10.
24. Komura Subaru, Kento Kawakami, Yoshihiro Yamamoto, Akira Kusaba, Katsunori Yoshimatsu, Naoya Okamoto, Yoshihiro Kangawa, Koichi Kakimoto, Kenji Shiraishi, Flow Influence on Gan MOVPE Growthorientation, IWMCG-9, 2018.10.
25. Komura Subaru, Kento Kawakami, Yoshihiro Yamamoto, Akira Kusaba, Katsunori Yoshimatsu, Naoya Okamoto, Yoshihiro Kangawa, Koichi Kakimoto, First Principles and Thermodynamic Studies on Gan MOVPE Processes, IWMCG-9, 2018.10.
26. K. Kawakami, S. Komura, Y. Yamamoto, A. Kusaba, K. Yoshimatsu, N. Okamoto, Y. Kangawa, K. Kakimoto, K. Shiraishi, Methodology for Multiphysics Flow Simulation in GaN MOVPE Using Thermodynamic Analysis and First Principles Calculations for GaN Deposition, IWMCG-9, 2018.10.
27. Xue-Feng Han, Xin Liu, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto, Numerical Analysis on 3D Behavior of Floating Zone (FZ) for Silicon Crystal Growth, IWMCG-9, 2018.10.
28. Xuefeng Han, Satoshi Nakano, Xin Liu, Hirofumi Harada, Yoshiji Miyamura andKoichi Kakimoto, Numerical investigation on asymmetrical interface of floating zone (FZ) for silicon crystal growth, Sixth European Conference on Crystal Growth (ECCG6), 2018.09.
29. Xin Liu, Xue-Feng Han, S. Nakano, H. Harada,Y. Miyamura, and K. Kakimoto, Numerical analyses and experimental validations on transport and control of carbon in in Czochralski silicon crystal growth, Sixth European Conference on Crystal Growth (ECCG6), 2018.09.
30. Tomoro Ide, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Masato Imai, Koichi Kakimoto, Numerical analysis of dependence of oxygen on dislocation generation in Si single crystal, Sixth European Conference on Crystal Growth (ECCG6), 2018.09.
31. 原田 博文, 劉 立軍, 柿本 浩一, 高速成長では、結晶の温度勾配は緩やか?, 第79回応用物理学会 秋季学術講演会, 2018.09.
32. Koichi Kakimoto, Satosi Nakano, Yoshiji Miyamura, Hirofumi Harada, Xin Liu, Xuefeng Han, and Shin-ichi Nishizawa, Silicon crystal growth of solar cells: Lessons learned from the pasts, 10th International Workshop on Crystalline Silicon for Solar Cells, 2018.04.
33. Xue-Feng Han, Xin Liu, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, and Koichi Kakimoto, Numerical simulation on asymmetrical interface of floating zone (FZ) for silicon crystal growth, 10th International Workshop on Crystalline Silicon for Solar Cells, 2018.04.
34. Xin Liu, Xue-Feng Han, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, and Koichi Kakimoto, Numerical analyses on carbon transport and control during the melting process of Czochralski silicon crystal growth, 10th International Workshop on Crystalline Silicon for Solar Cells, 2018.04.
35. Tomoro Ide, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Masato Imai, and Koichi Kakimoto, Effect of oxygen on dislocation density in si single crystal for solar cells during solidification and cooling process, 10th International Workshop on Crystalline Silicon for Solar Cells, 2018.04.
36. 柿本 浩一, 宮村 佳児, 原田 博文, Xin Liu,Han Xuefeng, 中野 智, 西澤 伸一, 高効率シリコン太陽電池用単結晶育成と評価の温故知新, 第65回応用物理学会 春季学術講演会, 2018.03.
37. 稲富 悠也, 草場 彰, 柿本 浩一, 寒川 義裕, 小島 一信, 秩父 重英, MOVPE成長m面 AlInN/GaNヘテロ構造 における特異ヘテロ構造 における特異ヘテロ構造 における特異, 第65回応用物理学会 春季学術講演会, 2018.03.
38. 関口 一樹, 白川 裕規, 長川 健太, 洗平 昌晃, 寒川 義裕, 柿本 浩一, 白石 賢二, TMG分解の最終生成物に関する理論的考察 , 第65回応用物理学会 春季学術講演会, 2018.03.
39. 河村 貴宏, 北本 啓, 今出 完, 吉村 政志, 森 勇介, 森川 良忠, 寒川 義裕, 柿本 浩一, OVPE成長条件下におけるGaN表面構造およびO不純物の脱離エネルギーの解析, 第65回応用物理学会 春季学術講演会, 2018.03.
40. 大島 亮祐, 高村 昴, 川上 健人, 山本 芳裕, 長川 健太, 芳松 克則, 岡本 直也, 牧野 英美, 細川 徳一, 恩田 正一, 寒川 義裕, 柿本 浩一, 白石 賢二, マルチフィジックスシミュレーションに基づくSiCガス成長の研究, 第65回応用物理学会 春季学術講演会, 2018.03.
41. 宮村 佳児, 原田 博文, 中野 智, 柿本 浩一 , CZ炉内のCO濃度(Ⅱ), 第65回応用物理学会 春季学術講演会, 2018.03.
42. 井手 智朗, 中野 智, 原田 博文, 宮村 佳児,柿本 浩一, 太陽電池用シリコン単結晶の凝固過程および冷却過程における転位密度の酸素依存性, 第65回応用物理学会 春季学術講演会, 2018.03.
43. Xuefeng Han, Satoshi Nakano, Xin Liu, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto, Numerical simulation of crystal rotation effect on the solid-liquid interface in the floating-zone (FZ) silicon, 第65回応用物理学会 春季学術講演会, 2018.03.
44. Xin Liu, Xue-Feng Han, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto, Numerical analyses on carbon transport and control during the melting process of Czochralski silicon crystal growth, 第65回応用物理学会 春季学術講演会, 2018.03.
45. 稲富悠也, 寒川義裕, 小島一信, 柿本浩一, AlInNを用いた深紫外光源の開発~薄膜成長における組成引込現象の理論解析~, 第17回東北大学多元物質科学研究所研究発表会, 2017.12.
46. 川上賢人, 高村昴, 山本芳裕, 草場彰, 芳松克則, 岡本直也, 寒川義裕, 柿本 浩一, 白石賢二, GaN MOVPE法における基板面方位依存性を考慮した流れの影響I, 第46回結晶成⻑国内会議(JCCG-46), 2017.11.
47. 山本芳裕, 川上賢人, 芳松克則, 岡本直也, 寒川義裕, 柿本 浩一, 白石賢二, GaN MOVPE成長における駆動力への流れの影響, 第46回結晶成⻑国内会議(JCCG-46), 2017.11.
48. 高村昴, 川上賢人, 山本芳裕, 草場彰, 芳松克則, 岡本直也, 寒川義裕, 柿本 浩一, 白石賢二, GaN MOVPE法における基板面方位依存性を考慮した流れの影響II, 第46回結晶成⻑国内会議(JCCG-46), 2017.11.
49. 井手 智朗, 原田 博文, 中野智, 柿本 浩一, 太陽電池用多結晶Siの成長過程と冷却過程における転位増殖に及ぼす酸素の影響, 第46回結晶成⻑国内会議(JCCG-46), 2017.11.
50. 中野智, 刘 鑫, 韓 学峰, 柿本 浩一, シリコン単結晶における半径方向温度差の転位密度に与える影響, 第46回結晶成⻑国内会議(JCCG-46), 2017.11.
51. 河村貴宏, 北本啓, 今出完, 吉村政志, 森勇介, 森川良忠, 寒川義裕, 柿本 浩一, 第一原理計算を用いたOVPE成長中の半極性GaN表面構造の解析, 第46回結晶成⻑国内会議(JCCG-46), 2017.11.
52. 間地雄大, 中野智, 柿本 浩一, AlN結晶成長の昇華法における物質流束解析, 第46回結晶成⻑国内会議(JCCG-46), 2017.11.
53. 宮村 佳児, 原田 博文, 中野智, 柿本 浩一, CZ炉内のCO濃度, 第46回結晶成⻑国内会議(JCCG-46), 2017.11.
54. 草場彰, 李冠辰, マイケル・ヴォン・スパコフスキー, 寒川義裕, 柿本 浩一, GaN(0001)におけるNH3吸着過程の非平衡量子熱力学モデリング:付着係数の理論解析, 第46回結晶成⻑国内会議(JCCG-46), 2017.11.
55. Xue-Feng Han, Xin Liu, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto, Numerical simulation on 3D melt-crystal interface of floating zone (FZ) for silicon crystal growth, 第46回結晶成⻑国内会議(JCCG-46), 2017.11.
56. Y. Morimoto, T. Kawamura, Y. Suzuki, Y. Kangawa, K. Kakimoto, Molecular Dynamics Simulation of Strain relaxation of AlN buffer layer, IWUMD-2017, 2017.11.
57. Y. Inatomi, Y. Kangawa, S. F. Chichibu, K. Kakimoto, Theoretical study of composition pulling effect in AlGaN and AlInN MOVPE, IWUMD-2017, 2017.11.
58. Xin Liu, Xue-Feng Han, Satoshi Nakano, Koichi Kakimoto, Control of crucible movement on melting process and C in CZ-Si growth, The 27th Photovoltaic Science and Engineering Conference , 2017.11.
59. 稲富 悠也, 寒川 義裕, 柿本 浩一, InGaN MOVPEにおいて格子不整合がIn取り込みに与える影響, 第36回電子材料シンポジウム(EMS-36), 2017.11.
60. K. Kakimoto, Crystal Growth of Power Devices, CGCT-7, 2017.10.
61. Kento Kawakami, Yoshihiro Yamamoto, Katsunori Yoshimatu, Naoya Okamoto, Yoshihiro Kangawa, Koichi Kakimoto, Kenji Shiraishi, A Methodology for Multiphysics Simulation of Gallium Nitride MOVPE Method using Thermodynamic Analysis of Driving Force of Gallium Nitride Crystal Growth, ICMaSS2017, 2017.10.
62. Powel Kempisty, Yoshihiro Kangawa, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, Hiroshi Amano, Stability of the carbon and oxygen impurities in the subsurface layer near the polar GaN surfaces, ICMaSS2017, 2017.10.
63. Koichi Kakimoto, The effect of pressure and temperature on growth rate and layer uniformity in the sublimation growth of AIN crystals, ICMaSS2017, 2017.09.
64. Yoshihiro Yamamoto, Kento Kawakami, Katsunori Yoshimatsu, Naoya Okamoto, Yoshihiro Kangawa, Koichi Kakimoto, Kenji Shiraishi, Multiphysics Flow Simulation with Appropriate Conditions Predicted by Thermodynamic Analysis of Driving Force of GaN Crystal Growth, ICMaSS2017, 2017.09.
65. A. Kusaba, Y. Kangawa, P. Kempisty, K. Shiraishi, K. Kakimoto, A. Koukitu, Thermodynamic Modeling of GaN MOVPE: Contribution of Surface State, ICMaSS2017, 2017.09.
66. K. Kakimoto, Y. Miyamura, H. Harada, L. Xin, S. Nakano, Crystal Growth of CZ-Si and Relationship between Carrier Lifetime and Defects, SSDM2017, 2017.09.
67. K. Sekiguchi, H. Shirakawa, K. Chokawa, M. Araidai, Y. Kangawa, K. Kakimoto, K. Shiraishi, Thermodynamic Analysis of the Surface Reactions in GaN MOVPE, SSDM2017, 2017.09.
68. Akira Kusaba, Guanchen Li, Michael R. von Spakovsky, Yoshihiro Kangawa, Koichi Kakimoto, Steepest-entropy-ascent quantum thermodynamic behavior of ammonia chemical adsorption on GaN(0001) surfaces under MOVPE, The 2017 E-MRS Fall Meeting, 2017.09.
69. 関口 一樹, 白川 裕規, 長川 健太, 洗平 昌晃, 寒川 義裕, 柿本浩一, 白石 賢二, GaN MOVPEにおける気相中および基板上での反応プロセス解明, 第78回応用物理学会秋季学術講演会, 2017.09.
70. 中野 智, HAN XUEFENG, 柿本浩一, Si単結晶成長における転位密度の半径方向温度差依存性, 第78回応用物理学会秋季学術講演会, 2017.09.
71. 宮村 佳児, 原田 博文, 中野 智, 柿本浩一, CZ炉内のCO濃度, 第78回応用物理学会秋季学術講演会, 2017.09.
72. 井手 智朗, 中野 智, 原田 博文, 宮村 佳児, 柿本浩一, 太陽電池用多結晶Siの成長過程と冷却過程における転位の増殖, 第78回応用物理学会秋季学術講演会, 2017.09.
73. 石川 陽一郎, 田島 道夫, 木内 広達, 小椋 厚志, 宮村 佳児, 原田 博文, 柿本浩一, 電子線照射発光活性化液体窒素温度PL法によるP添加n型CZ-Si結晶の炭素定量, 第78回応用物理学会秋季学術講演会, 2017.09.
74. HAN XUEFENG, Satoshi Nakano, Xin Liu, Koichi Kakimoto, 3D global heat transfer model on floating zone (FZ) for silicon crystal growth, 第78回応用物理学会秋季学術講演会, 2017.09.
75. Xin Liu, Xue-Feng Han, Satoshi Nakano, Koichi Kakimoto, Control of crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth, 第78回応用物理学会秋季学術講演会, 2017.09.
76. Xue-Feng Han, Satoshi Nakano, Xin Liu, Kakimoto Koichi, 3D global modeling of induction heating of silicon in the floating zone process, 21st American Conference on Crystal Growth and Epitaxy (ACCGE-21), 2017.08.
77. Xin Liu, Xue-Feng Han, Satoshi Nakano, Kakimoto Koichi, Control of crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth, 21st American Conference on Crystal Growth and Epitaxy (ACCGE-21), 2017.08.
78. Wataru Fukushima, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Kakimoto Koichi, Influence of oxygen diffusion on dislocation density in Si single crystal , 21st American Conference on Crystal Growth and Epitaxy (ACCGE-21), 2017.08.
79. Kakimoto Koichi, INFLUENCE OF CARRIER CONCENTRATION ON BULK LIFETIME IN CZ-SI CRYSTAL, 21st American Conference on Crystal Growth and Epitaxy (ACCGE-21), 2017.08.
80. Kakimoto Koichi, ANALYSIS OF RE-MELTING PROCESS OF SILICON GROWN BY TRANSVERSE MAGNETIC FIELD APPLIED CZ METHOD, 21st American Conference on Crystal Growth and Epitaxy (ACCGE-21), 2017.08.
81. Yoshiji Miyamura, Hirofumi Harada, Satoshi Nakano, Kakimoto Koichi, Influence of Carrier Concentration on Bulk Lifetime in CZ-Si Crystal, ICDS-29 (The 29th International Conference on Defects in Semiconductors), 2017.08.
82. Yuya Inatomi, Yoshihiro Kangawa, Tomonori Ito, Tadeusz Suski, Koichi Kakimoto, Akinori Koukitu, Thermodynamic analysis of InGaN MOVPE: influence of lattice constraint, 12th International Conference on Nitride Semiconductors (ICNS12), 2017.07.
83. K. Kawakami, Y. Yamamoto, K. Yoshimatsu, N. Okamoto, Y. Kangawa, K. Kakimoto, K. Shiraishi, A Methodology for Multiphysics Simulation of GaN MOVPE Using Thermodynamic Analysis of Driving Force of GaN Crystal Growth, 12th International Conference on Nitride Semiconductors (ICNS12), 2017.07.
84. Y. Yamamoto, K. Kawakami, K. Yoshimatsu, N. Okamoto, Y. Kangawa, K. Kakimoto, K. Shiraishi, Multiphysics Flow Simulation with Suitable Conditions Predicted by Thermodynamic Analysis of Driving Force of GaN Crystal Growth, 12th International Conference on Nitride Semiconductors (ICNS12), 2017.07.
85. Takahiro Kawamura, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, Kakimoto Koichi, First-Principles Study of Non-Polar GaN Surfaces under the OVPE Growth Conditions, 12th International Conference on Nitride Semiconductors (ICNS12), 2017.07.
86. K. Sekiguchi, H. Shirakawa, K. Chokawa, M. Araidai, Y. Kangawa, K. Kakimoto, K. Shiraishi, Thermodynamic Analysis of the TMG Decomposition Process Considering the Activation Energy, 12th International Conference on Nitride Semiconductors (ICNS12), 2017.07.
87. Pawel Kempisty, Yoshihiro Kangawa, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, Hiroshi Amano, Density Functional Theory study on stability of carbon and oxygen at GaN(0001) and GaN(000-1) surfaces, 12th International Conference on Nitride Semiconductors (ICNS12), 2017.07.
88. 草場彰, G. Li, M. R. von Spakovsky, 寒川義裕, 柿本浩一, NH3 化学吸着の非平衡状態発展:最急エントロピー勾配量子熱力学モデリング, 第9 回ナノ構造・エピタキシャル成長講演会, 2017.07.
89. 森本由成, 河村貴宏, 鈴木泰之, 寒川義裕, 柿本浩一, 分子動力学法によるAlN バッファ層のひずみ緩和シミュレーション, 第9 回ナノ構造・エピタキシャル成長講演会, 2017.07.
90. 稲富悠也, 寒川義裕, 伊藤智徳, 柿本浩一, AlInN 薄膜成長における格子不整合と組成取り込み効率の相関, 第9 回ナノ構造・エピタキシャル成長講演会, 2017.07.
91. 寒川義裕, 芳松克則, 白石賢二, 柿本浩一, 窒化物半導体結晶成長モデリングの現状と課題, 第9 回ナノ構造・エピタキシャル成長講演会, 2017.07.
92. 関口一樹, 白川裕規, 長川健太, 洗平昌晃, 寒川義裕, 柿本浩一, 白石賢二, GaN MOVPE におけるTMG 分解反応プロセスの理論的考察, 第9 回ナノ構造・エピタキシャル成長講演会, 2017.07.
93. 河村貴宏, 北本啓, 今出完, 吉村政志, 森勇介, 森川良忠, 寒川義裕, 柿本浩一, OVPE 法によるGaN 成長における極性および非極性GaN 表面構造の解析, 第9 回ナノ構造・エピタキシャル成長講演会, 2017.07.
94. 川上賢人, 山本芳裕, 芳松克則, 岡本直也, 寒川義裕, 柿本浩一, 白石賢二, GaN MOVPE 法における結晶成長マルチフィジックスシミュレーション, 第9 回ナノ構造・エピタキシャル成長講演会, 2017.07.
95. Kakimoto Koichi, Multi-scale Modelling of Crystal Growth: from Silicon to Wide bandgap materials, THE 9th INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS, ROCAM 2017 & THE 2nd INTERNATIONAL SYMPOSIUM ON DIELECTRIC MATERIALS AND APPLICATIONS, ISyDMA 2017, 2017.07.
96. Tomoro Ide, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Kakimoto Koichi, Effect of Oxygen on Dislocation Multiplication during Growth of Crystalline Silicon for Solar Cell, 7th International Workshop on Crystal Growth Technology, 2017.07.
97. Yudai Maji, Satoshi Nakano, Kakimoto Koichi, Mass-flux Analysis of AlN Crystal Growth at a Seed Face in PVT Method, 7th International Workshop on Crystal Growth Technology, 2017.07.
98. Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Kakimoto Koichi, Numerical analysis of dislocation density in Si single crystal with oxygen diffusion, 7th International Workshop on Crystal Growth Technology, 2017.07.
99. Xin Liu, Xue-Feng Han, Satoshi Nakano, Kakimoto Koichi, Control of crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth, 7th International Workshop on Crystal Growth Technology, 2017.07.
100. Xue-Feng Han, Satoshi Nakano, Xin Liu, Kakimoto Koichi, 3D Numerical analysis on the shape of free surface in floating zone (FZ) method for silicon single crystal growth, 7th International Workshop on Crystal Growth Technology, 2017.07.
101. 河村 貴宏, 北本 啓, 今出 完, 吉村 政志, 森 勇介, 森川 良忠, 寒川 義裕, 柿本 浩一, OVPE成長条件下におけるGaN非極性表面構造の第一原理計算, 第64回応用物理学会春季学術講演会, 2017.03.
102. 間地 雄大, 中野 智, 柿本 浩一, AlN結晶成長の昇華法におけるシード面近傍の物質流束解析, 第64回応用物理学会春季学術講演会, 2017.03.
103. 稲富 悠也, 寒川 義裕, 伊藤 智徳, 柿本 浩一, InGaN薄膜成長における格子不整合とIn組成の相関, 第64回応用物理学会春季学術講演会, 2017.03.
104. 関口 一樹, 白川 裕規, 長川 健太, 洗平 昌晃, 寒川 義裕, 柿本 浩一, 白石 賢二, 活性化エネルギーを考慮したTMG分解プロセスの理論的考察, 第64回応用物理学会春季学術講演会, 2017.03.
105. 川上 賢人, 山本 芳裕, 芳松 克則, 岡本 直也, 寒川 義裕, 柿本 浩一, 白石 賢二, GaN MOVPEにおける結晶成長マルチフィジックス流動シミュレーション, 第64回応用物理学会春季学術講演会, 2017.03.
106. 白石 賢二, 関口 一樹, 長川 健太, 白川 裕規, 川上 賢人, 山本 芳裕, 洗平 昌晃, 永松 謙太郎, 新田 州吾, 岡本 直也, 芳松 克則, 寒川 義裕, 柿本 浩一, 天野 浩, エピタキシャル成長のマルチフィジックスシミュレーションの現状, 第64回応用物理学会春季学術講演会, 2017.03.
107. 宮村 佳児, 原田 博文, 中野 智, 柿本 浩一, CZシリコンにおけるキャリア濃度とバルクライフタイムの関係, 第64回応用物理学会春季学術講演会, 2017.03.
108. 中野 智, 福島 航, 原田 博文, 宮村 佳児, 柿本 浩一, 酸素拡散を考慮したシリコン単結晶中の転位密度解析, 第64回応用物理学会春季学術講演会, 2017.03.
109. Liu Xin, HAN XUEFENG, Nakano Satoshi, Kakimoto Koichi, Effect of crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth, 第64回応用物理学会春季学術講演会, 2017.03.
110. HAN XUEFENG, Nakano Satoshi, Liu Xin, Kakimoto Koichi, Numerical analysis on the free surface of floating zone (FZ) for silicon crystal growth by Volume of Fluid (VOF) model, 第64回応用物理学会春季学術講演会, 2017.03.
111. Kenji Shiraishi, Kazuki Sekiguchi, Hiroki Shirakawa, Kenta Chokawa, Masaaki Araidai, Yoshihiro Kangawa, Koichi Kakimoto, First principles and themodynamical studies on matel organic vaper phase epitaxy of GaN, 15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting, 2017.01, [URL], We analyzed metal organic vapor phase epitaxy growth mechanism of Ill-nitride semiconductors, GaN, A1N and InN based on first-principles calculations and thermodynamic analysis. With this calculated methods, we investigate the decomposition process of the group III source gases, X(CH3)3 (X = Ga, Al, In) at finite temperatures and whether the (CH3)3 AlNH2 adduct can be formed or not. Our calculated results show that (CH3)2 GaNH2 adduct cannot be formed in the gas phase reaction in GaN MOVPE. Whereas, (CH3)2AINH2 adduct can be formed so much in gas phase in A1N MOVPE. In case of GaN MOVPE, trimethylgallium (TMG, [Ga(CH3)3]) almost decomposes into Ga gas on growth surface by the assistance of H2 carrier gas instead of (CH3)2GaNH2 adduct formation. Moreover, in case of InN MOVPE, (CH3)2lnNH2 adduct formation cannot occur and it is relatively easy that In gas is produced even if there is no H2 carrier gas..
112. K. Kakimoto, Y. Miyamura, H. Harada, X. Liu, S. Nakano, Crystal Growth and Defect Analysis of Silicon for Photovoltaics, The 7th International Symposium on Advanced Science and Technology of Silicon Materials, 2016.11.
113. S. Nakano, B. Gao, K. Kakimoto, Relationship between the Dislocation Density and Residual Stress in a GaN Crystal during the Cooling Process
, The 7th International Symposium on Advanced Science and Technology of Silicon Materials, 2016.11.
114. W. Fukushima, B. Gao, S. Nakano, H. Harada, Y. Miyamura, K. Kakimoto, Three-dimensional Analysis of Dislocation Density in Oxygen Dissolved Silicon Crystals
, The 7th International Symposium on Advanced Science and Technology of Silicon Materials, 2016.11.
115. S. Nakano, B. Gao, H. Harada, Y. Miyamura, K. Kakimoto, Effect of growth orientation on dislocation density and residual strain in mono-like silicon crystal, The 9th International Workshop on Crystalline Silicon for Solar Cells and the 3rd Silicon Materials Workshop (CSSC-9), 2016.10.
116. X. Liu, S. Nakano, B. Gao, K. Kakimoto, Effect of packing structure of Si chunks on melting process and carbon contamination in Czochralski silicon crystal growth, The 9th International Workshop on Crystalline Silicon for Solar Cells and the 3rd Silicon Materials Workshop (CSSC-9), 2016.10.
117. A. Kusaba, Y. Kangawa, M. R. von Spakovsky, K. Shiraishi, K. Kakimoto, A. Koukitu, Influence of Growth Orientation on Driving Force for InN Deposition by MOVPE, International Workshop on Ntride Semiconductors 2016, 2016.10.
118. Koichi Kakimoto, Satoshi Nakano, Yoshihiro Kangawa, Crystal growth of AlN: from atomic scale to macro scale

, E-MRS 2016 Fall Meeting, 2016.09.
119. 宮村 佳児, 原田 博文, 中野 智, 柿本 浩一, CZ シリコンにおける低温熱履歴のバルクライフタイムへの影響, 第77回応用物理学会秋季学術講演会, 2016.09.
120. 関口 一樹, 白川 裕規, 長川 健太, 洗平 昌晃, 寒川 義裕, 柿本 浩一, 白石 賢二, 窒化物半導体成長メカニズムの熱力学的考察, 第77回応用物理学会秋季学術講演会, 2016.09.
121. 中野 智, 高 冰, 柿本 浩一, Si単結晶成長における転位密度・残留歪の結晶成長方位依存性, 第77回応用物理学会秋季学術講演会, 2016.09.
122. 河村 貴宏, 北本 啓, 今出 完, 吉村 政志, 森 勇介, 森川 良忠, 寒川 義裕, 柿本 浩一, 第一原理計算によるOVPE 成長条件下におけるGaN(000-1) 表面構造の解析, 第77回応用物理学会秋季学術講演会, 2016.09.
123. Xin Liu, Satoshi Nakano, Koichi Kakimoto, Dynamic modeling of melting process and carbon contamination in packed Si chunks of Czochralski silicon crystal growth, 第77回応用物理学会秋季学術講演会, 2016.09.
124. 寒川 義裕, 白石 賢二, 柿本 浩一, GaN 結晶成長シミュレーションの新展開:第一原理計算に基づくアプローチ, 第77回応用物理学会秋季学術講演会, 2016.09.
125. 柿本 浩一, パワーデバイス用高純度Si単結晶製造とその適用, 日本機械学会 2016年度年次大会, 2016.09.
126. X Liu, S. Nakano, B. Gao, K. Kakimoto, Effect of packing structure of Si chunks on melting process and carbon contamination in Czochralski silicon crystal growth, The 18th International Conference on Crystal Growth and Epitaxy(ICCGE-18), 2016.08.
127. Y. Miyamura, H. Harada, S. Nakano, B. Gao, K. Kakimoto, Influence of Light Elements on Bulk Lifetime in CZ Si crystals, The 18th International Conference on Crystal Growth and Epitaxy(ICCGE-18), 2016.08.
128. A. Kusaba, Y. Kangawa, K. Kakimoto, K. Shiraishi, H. Amano, A. Koukitu, Thermodynamic analysis of InN metalorganic vapor phase epitaxy: influence of growth orientation and surface reconstruction, The 18th International Conference on Crystal Growth and Epitaxy, 2016.08.
129. T. Tamura, A. Kusaba, Y. Kangawa, T. Ito, T. Suski, K. Kakimoto, A. Koukitu, Contribution of lattice constraint to indium incorporation into coherently grown InGaN, The 18th International Conference on Crystal Growth and Epitaxy(ICCGE-18), 2016.08.
130. H. VALENCIA, Y. Kangawa, K. Kakimoto, MOCDV and CBE of GaAs1-xNx modeled by ab initio stabilities of (100) surfaces under As2, H2, and N2, The 18th International Conference on Crystal Growth and Epitaxy(ICCGE-18), 2016.08.
131. K. Sekiguchi, H. Shirakawa, Y. Yamamoto, M. Araidai, Y. Kangawa, K. Kakimoto, First principles and thermodynamic analysis of trimethylgallium (TMG) decomposition during MOVPE growth of GaN, The 18th International Conference on Crystal Growth and Epitaxy(ICCGE-18), 2016.08.
132. W. Fukushima, B. Gao, S. Nakano, H. Harada, Y. Miyamura, K. Kakimoto, Effect of oxygen atoms on dislocation multiplication in a silicon crystal, The 18th International Conference on Crystal Growth and Epitaxy(ICCGE-18), 2016.08.
133. K. Yoshimatsu, N. Okamoto, Y. Kangawa, K. Kakimoto, K. Shiraishi, Computational fluid dynamic approach coupled with thermodynamic analysis of driving force for deposition in GaN MOVPE, The 18th International Conference on Crystal Growth and Epitaxy, 2016.08.
134. T. Kawamura, A. Kitamoto, M. Imade, M. Yoshimura, Y. Mori, Y. Morikawa, Y. Kangawa, K. Kakimoto, Stable Structure of GaN(0001) under the OVPE Growth Conditions, The 18th International Conference on Crystal Growth and Epitaxy(ICCGE-18), 2016.08.
135. S. Nakano, B. Gao, K. Kakimoto, Numerical analysis of dislocation density and residual stress in a GaN single crystal during the cooling process, The 18th International Conference on Crystal Growth and Epitaxy(ICCGE-18), 2016.08.
136. 柿本 浩一, 宮村 佳児, 原田 博文, 中野 智, 高 冰, CZシリコン単結晶成長における軽元素の導入とバルクライフタイムとの関係:実験と数値解析」, (独) 日本学術振興会「結晶加工と評価技術」第145委員会 第149回研究会, 2016.07.
137. 草場 彰, 寒川 義裕, 柿本 浩一, 白石 賢二, 纐纈 明伯, InおよびN極性InN有機金属気相成長の熱力学解析, 第35回電子材料シンポジウム, 2016.07.
138. 河村 貴宏, 北本 啓, 今出 完, 吉村 政志, 森 勇介, 森川 良忠, 寒川 義裕, 柿本 浩一, OVPE 成長条件下におけるGaN(0001)表面状態の解析, 第8回 窒化物半導体結晶成長講演会, 2016.05.
139. 草場 彰, 寒川 義裕, 白石 賢二, 柿本 浩一, 纐纈 明伯, InN(0001)面および(000-1)面MOVPE 成長の熱力学解析, 第8回 窒化物半導体結晶成長講演会, 2016.05.
140. 柿本 浩一, 宮村 佳児, 原田 博文, 中野 智, CZ シリコン単結晶における軽元素とバルクライフタイムの関係, 第63回応用物理学会春季学術講演会, 2016.03.
141. 中野 智, GAO BING, 柿本 浩一, GaN 単結晶における基板と冷却速度の転位密度に与える影響, 第63回応用物理学会春季学術講演会, 2016.03.
142. 福島 航, GAO BING, 原田 博文, 宮村 佳児, 中野 智, 柿本 浩一, シリコン単結晶の転位増殖に及ぼす酸素の影響, 第63回応用物理学会春季学術講演会, 2016.03.
143. 刘 鑫, GAO BING, 中野 智, 原田 博文, 宮村 佳児, 柿本 浩一, Effect of packing structure of Si chunks on melting process and carbon contamination in Czochralski silicon crystal growth, 第63回応用物理学会春季学術講演会, 2016.03.
144. Karolin Jiptner, Yoshiji Miyamura, Bing Gao, Hirofumi Harada, Koichi Kakimoto, Takashi Sekiguchi, Orientation dependency of dislocation generation in Si growth process, 16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015, 2016.01, [URL], In an attempt to understand how and where dislocations are introduced into Si ingots bytemperature gradients, bulk dislocation-free FZ crystals are exposed to temperature gradients similar tothose in Bridgman Si crystal growth. This heat treatment introduces dislocations, which were analyzedusing X-ray topography (XRT) and Scanning InfraRedPolariscopy (SIRP). Hereby, the orientationdependency is taken into account and ingots in (001) and (111) growth orientation are evaluated inthis work. It can be found that the dislocation generation takes place at similar regions of the crystaland is independent of orientation, however, their propagation and multiplication differs. This leads toan overall different shape of the dislocation network. Especially intriguing are the long slip lines inthe (111)-crystal, which cannot be found in the (001)-crystal. This suggests a different magnitude ofslip propagation depending on the sample orientation. This effect should be explained by a differentactivation of slip systems and is discussed in the paper..
145. Takashi Sekiguchi, Yoshiji Miyamura, Hirofumi Harada, Karolin Jiptner, Jun Chen, Ronit R. Prakash, Satoshi Nakano, Bing Gao, Koichi Kakimoto, 50 cm size seed cast Si ingot growth and its characterization, 16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015, 2016.01, [URL], We have proposed single seed cast Si growth and developed a furnace for 50 cm squareingots. By optimizing growth parameters, improving gas condition, coating, the quality of mono Siingot has improved. Namely, dislocation density, the concentrations of substitutional carbon andinterstitial oxygen have been significantly reduced. The conversion efficiency of cast Si solar cells hasbecome comparable with those of CZ Si wafers..
146. K. Kakimoto, B. GAO, Sh. Nishizawa, S. Nakano, H. Harada, Y. Miyamura, T. Sekiguchi, Y. KANGAWA, Modelling of Crystal Growth: Macro and Atomic Scale Analysis, The 8th International Workshop on Modeling in Crystal Growth, 2015.11.
147. B. GAO, S. Nakano, K. Kakimoto, Three-Dimensional Analysis of Dislocation Multiplication in Single-Crystal Silicon under Accurate Control of Cooling History of Temperature, The 8th International Workshop on Modeling in Crystal Growth, 2015.11.
148. S. Nakano, B. GAO, K. Jiptner, H. Harada, Y. Miyamura, T. Sekiguchi, M. Fukuzawa, K. Kakimoto, Numerical Analysis of Relationship between Dislocation Density and Residual Strain in Silicon Ingots Used for Solar Cells, The 8th International Workshop on Modeling in Crystal Growth, 2015.11.
149. S. Nakano, B. GAO, K. Kakimoto, Numerical Analysis of the Effect of Substrate and Cooling Rate on Grown-in Dislocation Multiplication for GaN Single Crystal, The 8th International Workshop on Modeling in Crystal Growth, 2015.11.
150. X. Liu, S. Nakano, B. GAO, K. Kakimoto, Reduction of Carbon Contamination during the Melting Process of Cz-Si Crystal Growth, The 8th International Workshop on Modeling in Crystal Growth, 2015.11.
151. S. Nakano, B. GAO, H. Harada, Y. Miyamura, T. Sekiguchi, K. Kakimoto, One-Seed Casting Large-Size Monocrystalline Silicon for High-Efficiency and Low-Cost Solar Cells, The 8th International Workshop on Modeling in Crystal Growth, 2015.11.
152. A. Kusaba, Y. KANGAWA, Y. Honda, H. Amano, K. Kakimoto, Ab initio-based approach to surface reconstruction on InN(0001) during induced-pressure MOVPE, 6th International Symposium on Growth of III-Nitrides, 2015.11.
153. GAO BING, 中野 智, 原田 博文, 宮村 佳児, 柿本 浩一, シリコン単結晶成長における転位密度低減に対する結晶成長方位の役割, 第45回結晶成長国内会議, 2015.10.
154. 中野 智, GAO BING, Karolin Jiptner, 原田 博文, 宮村 佳児, 関口隆史, 福澤理行, 柿本 浩一, 太陽電池用多結晶シリコン育成時における三次元転位密度・残留応力の数値解析および実験的評価, 第45回結晶成長国内会議, 2015.10.
155. 刘 鑫, GAO BING, 中野 智, 柿本 浩一, Reduction of Carbon Contamination during the Melting Process of Czochralski Silicon Crystal Growth, 第45回結晶成長国内会議, 2015.10.
156. 中野 智, GAO BING, Jiptner Karolin, 原田 博文, 宮村 佳児, 関口 隆史, 福澤 理行, 柿本 浩一, 太陽電池用多結晶Si育成時における3次元転位密度・残留応力解析の評価, 第76回応用物理学会秋季学術講演会, 2015.09.
157. GAO BING, 中野 智, 原田 博文, 宮村 佳児, 柿本 浩一, シリコン単結晶成長における転位密度低減に対する結晶成長方位の役割, 第76回応用物理学会秋季学術講演会, 2015.09.
158. Xin Liu, BING GAO, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto, Numerical analysis of SiC and SiO2 deposition processes by gas-solid interaction in Czochralski silicon crystal growth, 第76回応用物理学会秋季学術講演会, 2015.09.
159. Xin Liu, BING GAO, Satoshi Nakano, Koichi Kakimoto, Reduction of carbon contamination during the melting process of Czochralski silicon crystal growth, 5th European Conferece on Crystal Growth, 2015.09.
160. Koichi Kakimoto, BING GAO, Shin-ichi Nishizawa, Satoshi Nakano, Yoshihiro KANGAWA, Collaboration of atomic and macro scale calculations:polytype and defect control of wide bandgap material, 5th European Conferece on Crystal Growth, 2015.09.
161. Satoshi Nakano, BING GAO, Karolin Jiptner, Hirofumi Harada, Yoshiji Miyamura, Takashi Sekiguchi, Masayuki Fukuzawa, Koichi Kakimoto, Numerical analysis of dislocation density in multicrystalline silicon for solar cells using experimental verification, 5th European Conferece on Crystal Growth, 2015.09.
162. B. Gallien, M. Albaric, J.P. Garandet, Thierry Duffar, Koichi Kakimoto, M. M’ Hamdi, Study on the usage of a commercial software (Comsol multiphysics) for dislocation multiplication model
, 5th European Conferece on Crystal Growth, 2015.09.
163. Akira Kusaba, Yoshihiro KANGAWA, S.Krukowski, Koichi Kakimoto, Hirofumi Harada, Relationship between stability of facet surfaces and incorporation of zinc-blende phase in InN during pressurized reactor MOVPE: A theoretical approach, 5th European Conferece on Crystal Growth, 2015.09.
164. Kazuma Miyazaki, BING GAO, Satoshi Nakano, Koichi Kakimoto, The reduction of basal plane dislocations by modifying thermal conductivity of the crucible during PVT growth of 4H-SIC single crystals., 5th European Conferece on Crystal Growth, 2015.09.
165. BING GAO, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Takashi Sekiguchi, Koichi Kakimoto, ONE-SEED CASTING LARGE-SIZE MONOCRYSTALLINE SILICON FOR HIGH-EFFICIENCY AND LOW-COST SOLAR CELLS, ACCGE-20/OMVPE-17, 2015.08.
166. BING GAO, Satoshi Nakano, Koichi Kakimoto, THREE-DIMENSIONAL ANALYSIS OF DISLOCATION MULTIPLICATION IN SINGLE-CRYSTAL SILICON UNDER ACCURATE CONTROL OF COOLING HISTORY OF TEMPERATURE, ACCGE-20/OMVPE-17, 2015.08.
167. Koichi Kakimoto, Shin-ichi NIshizawa, BING GAO, Satoshi Nakano, 原田 博文, Yoshiji Miyamura, Takafumi Sekiguchi, ATOMIC AND MACRO SCALE CALCULATIONS ON CRYSTAL GROWTH OF WIDE BANDGAP SEMICONDUCTORS, ACCGE-20/OMVPE-17, 2015.08.
168. Satoshi Nakano, BING GAO, Koichi Kakimoto, EFFECT OF COOLING RATE ON GROWN-IN DISLOCATION MULTIPLICATION ON PRISMATIC SLIP PLANES FOR GAN SINGLE CRYSTAL, ACCGE-20/OMVPE-17, 2015.08.
169. Koichi Kakimoto, Time dependent and 3D structure of melt flow of silicon under transverse magnetic fields, BIFD 2015, 2015.07.
170. A. Kusaba, Yoshihiro KANGAWA, S. Krukowski, T. Kimura, T. Tanikawa, R. Katayama, T. Matsuoka, Koichi Kakimoto, Surface Energy and Facet Formation in InN films grown by Pressurized-Reactor MOVPE, 34th Electronic Materials Symposium, 2015.07.
171. S. Nakano, BING GAO, H. Harada, Y. Miyamura, K. Jiptner, Takashi Sekiguchi, Koichi Kakimoto, Numerical investigation of the relationship between the crystal growth method and dislocation density in multicrystalline silicon for solar cells
, 8th International Workshop on Crystalline Silicon for Solar Cells, 2015.05.
172. 草場 彰, 寒川 義裕, 柿本 浩一, InN加圧MOVPE成長における成長形と異相混入:表面エネルギーの理論解析, 第7回窒化物半導体結晶成長講演会, 2015.05.
173. BING GAO, K. Jiptner, S. Nakano, H. Harada, Y. Miyamura, Takashi Sekiguchi, Koichi Kakimoto, One-seed casting large-size monocrystalline silicon for high-efficiency and low-cost solar cells
, 8th International Workshop on Crystalline Silicon for Solar Cells, 2015.05.
174. 草場 彰, 住吉 央朗, 三宅秀人, 寒川 義裕, 柿本 浩一, AlN固体ソース溶液成長における固‐液界面形状のその場観察, 第7回窒化物半導体結晶成長講演会, 2015.05.
175. 松本光弘, 原田 博文, 柿本 浩一, 閻 紀旺, 単結晶SiCのナノインデンテーションに関する研究, 2015年精密工学会春季大会学術講演会, 2015.03.
176. GAO BING, 柿本 浩一, Modeling basal plane dislocations in single-crystal sapphire by Alexander–Haasen model, 第62回応用物理学会春季学術講演会, 2015.03.
177. Xin Liu, GAO BING, Satoshi Nakano, 柿本 浩一, Correlation study on heating profile and carbon contamination during the melting process of Czochralski silicon crystal growth, 第62回応用物理学会春季学術講演会, 2015.03.
178. 柿本 浩一, GAO BING, LIU XIN, 中野 智, 原田 博文, 宮村 佳児, 関口 隆史, 寒川 義裕, シードを用いた太陽電池用シリコンの結晶成長, 第62回応用物理学会春季学術講演会, 2015.03.
179. 永岡 章, Scarpulla Michael, 柿本 浩一, 吉野 賢二, 野瀬 嘉太郎, ケステライト化合物Cu2ZnSn(Sx, Se1-x)4単結晶中の固有散乱メカニズム, 第62回応用物理学会春季学術講演会, 2015.03.
180. 柿本 浩一, GAO BING, LIU XIN, 中野 智, 西澤 伸一, 原田 博文, 宮村 佳児, 関口 隆史, 寒川 義裕, パワーデバイス用単結晶の結晶成長, 第62回応用物理学会春季学術講演会, 2015.03.
181. GAO BING, Karolin Jiptner, Hirofumi Harada, Satoshi Nakano, Yoshiji Miyamura, Takashi Sekiguchi, 柿本 浩一, Three-dimensional analysis of dislocation multiplication in single-crystal silicon under accurate control of cooling history of temperature, 第62回応用物理学会春季学術講演会, 2015.03.
182. 中野 智, GAO BING, 柿本 浩一, GaN単結晶を用いた柱状すべり面における転位増殖のモデル化, 第62回応用物理学会春季学術講演会, 2015.03.
183. 宮村 佳児, 原田 博文, イプトナー カロリン, プラカシュ ロニト, 陳 君, 中野 智, 柿本 浩一, 関口 隆史, 50cm角seed cast法によるSiインゴットの育成と特性評価 (Ⅲ), 第62回応用物理学会春季学術講演会, 2015.03.
184. Koichi Kakimoto, Crystal growth of atomic scale and macro scale calculations, DKT-2015, 2015.03.
185. Koichi Kakimoto, SiC crystal growth of electrical and optical devices, 39th International Conference and Exposition on Advanced Ceramics and Composites, 2015.01.
186. Bing Gao, Koichi Kakimoto, Numerical analysis of impurities and dislocations during silicon crystal growth for solar cells, 7th Forum on Science and Technology of Silicon Materials, Silicon Forum 2014, 2015.01, [URL], Impurities and dislocations in silicon crystals can cause significant deterioration in the conversion efficiency of solar cells. For increasing solar cell efficiency, reduction of impurities and dislocations is necessary. Numerical simulation is a powerful tool for improving the quality of silicon crystal for solar cells. A set of numerical analysis system that includes all processes involved in crystal growth has been developed for studying the carbon and oxygen transport in global furnace, and a three-dimensional Alexander-Haasen model was developed for studying the dislocation multiplication. The simulation helped to reduce carbon and oxygen impurities by designing a simple crucible cover and to decrease the dislocation multiplication and residual stress by using a slow cooling process. Further quality improvements can be achieved using these solvers to optimize furnace structure and operating conditions at a low cost..
187. BING GAO, J. Karolin, S. Nakano, H. Harada, Y.Miyamura, T. Sekiguchi, Koichi Kakimoto, Application of Three-dimensional Alexanderhaasen Model to Analyzing Experimental Dislocation-density Distribution in Single-crystal Silicon, WCPEC-6, 2014.11.
188. BING GAO, Koichi Kakimoto, Role of Numerical simulation in high-quality crystal growth, CPVC14, 2014.11.
189. GAO BING, Jiptner Karolin, 中野 智, 原田 博文, 宮村 佳児, 関口 隆史, 柿本 浩一, 3次元Alexander-Haasenモデルにおけるシリコンの転位密度解析の長所と欠点, 第44回結晶成長国内会議 NCCG-44, 2014.11.
190. 荒木 清道, GAO BING, 中野 智, 西澤 伸一, 柿本 浩一, 二次元核形成理論を用いたSiC昇華法成長における多形安定性の非定常解析, 第44回結晶成長国内会議 NCCG-44, 2014.11.
191. 水谷充利, 河村 貴宏, 鈴木 泰之, 寒川 義裕, 柿本 浩一, 分子動力学法によるらせん転位を含む4H-SiCの歪エネルギー解析
, 第44回結晶成長国内会議 NCCG-44, 2014.11.
192. 土井 優太, 井口 綾佑, 河村 貴宏, 鈴木 泰之, 寒川 義裕, 柿本 浩一, SiC表面分解法によるステップ端近傍のグラフェン成長シミュレーション
, 第44回結晶成長国内会議 NCCG-44, 2014.11.
193. 柿本 浩一, 数値解析による結晶成長の定量予測:マクロと原子スケールの融合
, 第44回結晶成長国内会議 NCCG-44, 2014.11.
194. Xin Liu, 中野 智, GAO BING, 柿本 浩一, Numerical Investigation of Carbon and Silicon Carbide Contamination during the Melting Process of Czochralski Silicon Crystal Growth
, 第44回結晶成長国内会議 NCCG-44, 2014.11.
195. 中野 智, GAO BING, 柿本 浩一, 転位密度に対する太陽電池用多結晶シリコン育成方法の影響, 第44回結晶成長国内会議 NCCG-44, 2014.11.
196. Yoshihiro KANGAWA, Koichi Kakimoto, Theoretical approach to growth mechanisms of InN by vapor phase epitaxy, 2nd Intensive Discussion on Growth of Nitride Semiconductors (IDGN-2), 2014.10.
197. Koichi Kakimoto, Computer simulation for multicrystal silicon growth, The 7th forum on the Science and Technologyof Silicon Materials 2014, 2014.10.
198. S. Nakano, BING GAO, Koichi Kakimoto, Numerical analysis of the relationship between the crystal growth method and dislocation density in multicrystalline silicon for solar cells

, The 7th forum on the Science and Technologyof Silicon Materials 2014, 2014.10.
199. X. Liu, BING GAO, S. Nakano, Koichi Kakimoto, Numerical investigation of carbon and silicon carbide contamination during the melting process of Czochralski silicon crystal growth
, The 7th forum on the Science and Technologyof Silicon Materials 2014, 2014.10.
200. Xin Liu, BING GAO, Satoshi Nakano, Koichi Kakimoto, Effects of Argon Flow on Carbon Contamination during Melting Process of Czochralski Silicon Crystal Growth, 2014年第75回応用物理学会秋季学術講演会, 2014.09.
201. BING GAO, Karolin Jiptner, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Takashi Sekiguchi, Koichi Kakimoto, Potential and limitation of 3D Alexander-Haasen model in analyzing experimental dislocation-density distribution in single-crystal silicon
, 2014年第75回応用物理学会秋季学術講演会, 2014.09.
202. 水谷充利, 河村貴宏, 鈴木泰之, 寒川 義裕, 柿本 浩一, 分子動力学法による4H-SiC のらせん転位解析, 2014年第75回応用物理学会秋季学術講演会, 2014.09.
203. 雨川将大, 吉村善徳, 河村貴宏, 鈴木泰之, 寒川 義裕, 柿本 浩一, 分子動力学法による窒化物半導体の超格子構造の格子歪み解析, 2014年第75回応用物理学会秋季学術講演会, 2014.09.
204. 中野 智, GAO BING, 柿本 浩一, 太陽電池用多結晶シリコン結晶育成方法と転位密度の関係, 2014年第75回応用物理学会秋季学術講演会, 2014.09.
205. 宮村佳児, 原田博文, 関口隆史, 中野 智, 柿本 浩一, mono Si 結晶表面の晶癖線, 2014年第75回応用物理学会秋季学術講演会, 2014.09.
206. 土井優太, 井口綾佑, 河村貴宏, 鈴木泰之, 寒川 義裕, 柿本 浩一, SiC 表面分解法におけるステップ端からのグラフェン成長シミュレーション, 2014年第75回応用物理学会秋季学術講演会, 2014.09.
207. 荒木 清道, GAO BING, 中野 智, 西澤伸一, 柿本 浩一, 二次元核形成理論を用いたSiC 昇華法成長における多形安定性の非定常解析, 2014年第75回応用物理学会秋季学術講演会, 2014.09.
208. Koichi Kakimoto, Crystal Growth of Energy Production and Energy Savin, IUMRS-ICA 2014, 2014.08.
209. H. Sumiyoshi, Yoshihiro KANGAWA, S. F. Chichibu, M. Knetzger, E. Meissner, Koichi Kakimoto, Cathodoluminescence studies of AlN/AlN(0001) grown by solid source solution growth method
, IWN2014, 2014.08.
210. Yoshihiro KANGAWA, T. Hamada, T. Kimura, R. Katayama, T. Matsuoka, Koichi Kakimoto, Theoretical study on structural stability of InN grown by pressurized-reactor MOVPE, 33rd Electronic Materials Symposium, 2014.07.
211. Koichi Kakimoto, Understanding and Control of Silicon Crystal Growth for LSIs and PVs, 6th International Workshop on Crystal Growth Technology, 2014.06.
212. Koichi Kakimoto, Crystal growth of SiC for power devices, CGCT-6, 2014.06.
213. Xin Liu, BING GAO, Satoshi Nakano, Koichi Kakimoto, Numerical Investigation of Carbon and Silicon Carbide Contamination in the Melting Process of a CZ-Si Crystal Growth, E-MRS 2014 SPRING MEETING, 2014.05.
214. BING GAO, Satoshi Nakano, Koichi Kakimoto, Three-dimensional modeling of basal plane dislocations in 4H-SiC, E-MRS 2014 SPRING MEETING, 2014.05.
215. Koichi Kakimoto, Cz silicon, Norwegian Solar Cell Conference 2014, 2014.05.
216. Karolin Jiptner, GAO BING, 宮村佳児, 原田博文, 柿本 浩一, 関口隆史, Thermal-stress induced dislocation distribution in seed-cast and CZ Si
ingots
, 第61 回応用物理学会春季学術講演会, 2014.03.
217. 宮村佳児, 原田博文, 西澤伸一, 陳  君, 関口隆史, 中野 智, 柿本 浩一, 50cm 角 mono cast Si 結晶成長(Ⅱ), 第61 回応用物理学会春季学術講演会, 2014.03.
218. 李 建永, Karolin Jiptner, 木村 隆, 関口隆史, 原田博文, 宮村佳児, 柿本 浩一, 小椋厚志, 炉内ガス雰囲気に依存した離型剤と溶融シリコンの界面特性, 第61 回応用物理学会春季学術講演会, 2014.03.
219. 寒川 義裕, 濵田達郎, 木村健司, 片山竜二, 松岡隆志, 柿本 浩一, InN 加圧MOVPE 成長における立方晶混入メカニズム, 第61 回応用物理学会春季学術講演会, 2014.03.
220. 刘 鑫, GAO BING, 中野 智, 柿本 浩一, CZ法における炭素混入を考慮したシリコン原料融解過程の数値解析, 第61 回応用物理学会春季学術講演会, 2014.03.
221. 永岡 章, 吉野賢二, 三宅秀人, 柿本 浩一, 野瀬嘉太郎, 四元系化合物Cu2ZnSnS4単結晶中のNaの影響, 第61 回応用物理学会春季学術講演会, 2014.03.
222. GAO BING, 中野 智, 柿本 浩一, PVT 成長法を用いた4H-SiC 単結晶における基底面転位の低減に対するヒーター電力制御の最適, 第61 回応用物理学会春季学術講演会, 2014.03.
223. GAO BING, 中野 智, 柿本 浩一, 物理的気相輸送法を用いた4H-SiC 単結晶成長における基底面転位の3 次元, 第61 回応用物理学会春季学術講演会, 2014.03.
224. 柿本 浩一, GAO BING, 中野 智, 寒川 義裕, 西澤伸一, PVT を用いたSiC 結晶成長における不純物混入解析, 第61 回応用物理学会春季学術講演会, 2014.03.
225. 柿本 浩一, GAO BING, 刘 鑫, 中野 智, 原田博文, 宮村佳児, 関口隆史, 寒川 義裕, 太陽電池用シリコンの現状と将来(30分), 第61 回応用物理学会春季学術講演会, 2014.03.
226. Y. Miyamura, H. Harada, K. Jiptner, J. Chen, R. R. Prakash, J. Y. Li, T. Sekiguchi, T. Kojima, Y. Ohshita, A. Ogura, M. Fukuzawa, S. Nakano, B. Gao, Koichi Kakimoto, 10 cm diameter mono cast Si growth and its characterization, 15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013, 2014.01, [URL], To get the optimized condition and ideal furnace structure, we have performed seed cast growth of mono-crystalline Si by using a unidirectional solidification furnace. More than 20 ingots of 10 cm diameter and 10 cm height were grown under different growth conditions. The quality of ingots was characterized by using Fourier transform infrared spectroscopy (FTIR), infrared microscopy, scanning infrared polariscope (SIRP), X-ray topography. We have realized reduction of carbon, residual strain and extended defects, which may contribute the increase of solar cell efficiency..
227. Karolin Jiptner, Masayuki Fukuzawa, Yoshiji Miyamura, Hirofumi Harada, Koichi Kakimoto, Takashi Sekiguchi, Characterization of residual strain in Si ingots grown by the seed-cast method, 15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013, 2014.01, [URL], The residual strain distribution in cast-grown mono-like Si ingots is analyzed. The effect of the crucible during solidification and the influence of different cooling rates is described. To clarify in which process steps residual strain accumulates, several Si ingots were grown in a laboratory scale furnace (Ø100 mm) using different cooling conditions after completion of the solidification. For the cooling, two different cooling rates were distinguished: fast cooling (12°C/min) and slow cooling (5°C/min). It was found that changes in cooling gradients greatly influence the amount of residual strain. The results show that slow cooling in any temperature range leads to strain reduction. The greatest reduction could be found when the temperature gradient was changed to slow cooling in the high temperature region..
228. Tomoe Yayama, Yoshihiro Kangawa, Koichi Kakimoto, Role of the surface N-H molecular layer in high quality In-RICH InGaN growth by MOVPE, International Symposium on Innovative Materials for Processes in Energy Systems, IMPRES 2013, 2014.01, [URL], This study theoretically investigates the influence of the growth orientation on In incorporation during metal-organic vapor phase epitaxy (MOVPE) growth. We propose a new theoretical model based on first-principles calculations that show the role of the N-H molecular layer on In incorporation. Under MOVPE growth conditions, III-nitride surfaces terminated by N-H molecular layers are stable. The N-H layer that covers the In atomic layer prevents In atom desorption and is replaced by Ga atoms. In incorporation is, therefore, more efficient for higher N-H layer coverage and stability. To investigate this relationship, calculation of the enthalpy change for the decomposition of an N-H molecular layer was performed. To take into account the experimental conditions, temperature dependence of surface reconstruction is considered. The trend of this enthalpy change depends on the growth orientation, which agrees well with the experimental In composition..
229. 寒川 義裕, 石川陽一, 田代公則, 古澤健太郎, 柿本 浩一, 固体ソース溶液成長法により作製したAlN の光学測定, 第13回 東北大学多元物質科学研究所 研究発表会, 2013.12.
230. 濱田 達郎, 屋山 巴, 寒川 義裕, 柿本 浩一, InN高圧MOVPE成長における構造多形の制御に関する理論検討, 平成25年度応用物理学会九州支部学術講演会, 2013.11.
231. GAO BING, 中野 智, 原田 博文, 宮村 佳児, 関口 隆史, 柿本 浩一, 数値計算を用いた円筒状単結晶における転位発生に対する冷却フラックスの影響, 第43回結晶成長国内会議, 2013.11.
232. 中野 智, GAO BING, 原田 博文, 宮村 佳児, 関口 隆史, 柿本 浩一, 数値解析を用いた太陽電池用多結晶シリコン育成時における転位密度と結晶からの総熱流出量との関係
, 第43回結晶成長国内会議, 2013.11.
233. 雨川 将大, 林 寛哉, 河村 貴宏, 鈴木泰之, 寒川 義裕, 柿本 浩一, 分子動力学法によるGaNの成長シミュレーションおよび格子歪み解析, 第43回結晶成長国内会議, 2013.11.
234. 柿本 浩一, GAO BING, 白桃 拓哉, 西澤伸一, 中野 智, 寒川 義裕, 昇華法成長SiC結晶中への不純物混入解析, 第43回結晶成長国内会議, 2013.11.
235. VALENCIA HUBERT, Yoshihiro KANGAWA, Koichi Kakimoto, Stabilities of GaAs(100) Surfaces under As2, H2, and N2 Conditions as a Model for Vapor-Phase Epitaxy
of GaAs1-xNx: a First-Principles Study
, 第43回結晶成長国内会議, 2013.11.
236. GAO BING, 西澤 伸一, 柿本 浩一, PVT成長法におけるAlexander-Haasenモデルを用いた4H-SiC単結晶の転位密度塑性挙動モデル, 第43回結晶成長国内会議, 2013.11.
237. Koichi Kakimoto, Crystal Growth of Single Crystals by Using a Seed-Cast Method, PVSEC-23, 2013.10.
238. Satoshi Nakano, BING GAO, Hirofumi Harada, Yoshiji Miyamura, Takafumi Sekiguchi, Koichi Kakimoto, Effect of outgoing total heat flows from the crystal on dislocation density and residual stress in multicrystalline silicon for solar cells, 7th International Workshop on Crystalline Silicon Solar Cells (CSSC7), 2013.10.
239. BING GAO, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto, Dislocation analysis of silicon for photovoltaic, 7th International Workshop on Crystalline Silicon Solar Cells (CSSC7), 2013.10.
240. Satoshi Nakano, BING GAO, Hirofumi Harada, Yoshiji Miyamura, Takafumi Sekiguchi, Koichi Kakimoto, Analysis of the dislocation density in crystalline silicon for solar cells by the casting process, Si Materials Workshop, 2013.10.
241. Masato Inoue, Yoshihiro KANGAWA, Hiroyuki Kageshima, Tanaka Satoru, Koichi Kakimoto, Designing vicinal direction of SiC(0001) for epitaxial graphene growth, The International Conference on Silicon Carbide and Related Materials (ICSCRM2013) , 2013.10.
242. Yoshihiro KANGAWA, Shunro Nagata, Koichi Kakimoto, Microstructure of AlN/AlN(0001) grown by solid-source solution growth (3SG) method, 8th International Workshop on Bulk Nitride Semiconductors (IWBNS-VIII), 2013.10.
243. BING GAO, S. Nishizawa, Koichi Kakimoto, Dislocation density-based modeling of plastic behavior of 4H-SiC single crystal by the Alexander-Haasen model during PVT growth, The International Conference on Silicon Carbide and Related Materials (ICSCRM2013) , 2013.10.
244. Yoshihiro KANGAWA, Shunro Nagata, Boris M Epelbaum, Koichi Kakimoto, Dislocation propagation behavior in AlN grown by solid-source solution growth (3SG) method, 2013 JSAP-MRSジョイントシンポジウム, 2013.09.
245. BING GAO, Takafumi Sekiguchi, Koichi Kakimoto, Dislocation density-based modeling of plastic deformation of 4H-SiC single crystals by the Alexander-Haasen model during PVT growth, 第74回応用物理学会学術講演会, 2013.09.
246. Masato Inoue, Yoshihiro KANGAWA, Hiroyuki Kageshima, Koichi Kakimoto, Structural control of C clustering at SiC(0001) steps, 2013 JSAP-MRSジョイントシンポジウム, 2013.09.
247. Tomoe Yayama, Yoshihiro KANGAWA, Koichi Kakimoto, The orientation dependence of In incorporation of InGaN: The role of N-H layer, 2013 JSAP-MRSジョイントシンポジウム, 2013.09.
248. BING GAO, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Takafumi Sekiguchi, Koichi Kakimoto, Influence of cooling flux on the generation of dislocations for cylindrical single crystal silicon by numerical modeling, 第74回応用物理学会学術講演会, 2013.09.
249. Xin Liu, BING GAO, Koichi Kakimoto, Analysis of Argon Gas Flow and Impurity Transport in a CZ-Si Crystal Growth by Global Simulation, 第74回応用物理学会学術講演会, 2013.09.
250. 中野 智, GAO BING, 原田 博文, 宮村 佳児, 関口 隆史, 柿本 浩一, 太陽電池用多結晶シリコン育成時における転位密度および残留応力と結晶からの熱流出量の関係, 第74回応用物理学会学術講演会, 2013.09.
251. BING GAO, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto, Dislocation Reduction in Muticrystalline or Seed Cast-Grown Silicon for Photovoltaic by Numerical Modeling, 2013Photovoltaic Materials and Manufacturing Issues III• Photovoltaic Materials and Manufacturing Issues III Workshop, 2013.09.
252. Tomoe Yayama, Yoshihiro KANGAWA, Koichi Kakimoto, The role of N-H molecular layer on the surface for high quality In-rich InGaN growth by MOVPE, International Symposium on Innovative Materials for Processes in Energy Systems 2013 (IMPRES2013), 2013.09.
253. BING GAO, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto, Effect of cooling rate on the activation of slip systems in seed cast-grown monocrystalline silicon in the [001] and [111] directions, 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), 2013.08.
254. Xin Liu, BING GAO, Koichi Kakimoto, Analysis of Argon Flow on Mass Transport in a CZ-Si Crystal Growth by Using Full Compressible Flow Solver, 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), 2013.08.
255. Koichi Kakimoto, Takuya Shiramomo, BING GAO, Frederic Mercier, Shin-ichi Nishizawa, Satoshi Nakano, Study of the effect of doped nitrogen and aluminum on polytype stability during PVT growth of SiC using 2D nucleation theory, 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), 2013.08.
256. Masato Inoue, Yoshihiro KANGAWA, H. Kageshima, Koichi Kakimoto, Structural controllability of C clusters by template effect of SiC step , 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), 2013.08.
257. Yoshihiro KANGAWA, Shunro Nagata, Boris Epelbaum, Koichi Kakimoto, Influence of growth orientation on microstructure of AlN grown by solid-source solution growth (3SG) method, 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), 2013.08.
258. BING GAO, Koichi Kakimoto, Quantitative analysis of correlations between the generation of dislocations and its influencing factors during cylindrical monocrystalline silicon growth, 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), 2013.08.
259. VALENCIA HUBERT, Yoshihiro KANGAWA, Koichi Kakimoto, Ab initio Study of GaAs(100) Surfaces Under As2, H2, and N2 Influence, as a Model for Vapor-Phase Epitaxy of GaAs1-xNx, 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), 2013.08.
260. Satoshi Nakano, BING GAO, Masato Inoue, H. Harada, Y. Miyamura, T. Sekiguchi, Koichi Kakimoto, Evaluation of numerical analysis of residual strain and dislocation density in a multicrystalline silicon for solar cells with two different heating system, 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), 2013.08.
261. BING GAO, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Koichi Kakimoto, Relationship between cooling flux direction and activation of slip systems of single -crystal silicon grown in [001] and [111] directions, 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), 2013.08.
262. Koichi Kakimoto, Crystal Growth of Single Crystals by Using a Seed-cast Method, 23rd Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, 2013.07.
263. 柿本 浩一, GAO BING, 白桃 拓哉, Frederic Mercier, 西澤伸一, 中野 智, 寒川 義裕, 昇華法におけるワイドギャップバルク半導体の結晶成長, SiC結晶成長講演会 ~SiC半導体の現在の課題と将来展望~, 2013.06.
264. 宮村佳児, 原田博文, 関口隆史, 中野智, 柿本浩一, 50cm角mono cast Si結晶成長, 2013年 第60回応用物理学会春季学術講演会, 2013.03.
265. Karolin Jiptner, 福澤理行, 宮村佳児, 原田博文, 柿本浩一,関口隆史, シードキャストシリコンインゴット中の残留歪の評価, 2013年 第60回応用物理学会春季学術講演会, 2013.03.
266. 高冰, 中野智, 原田博文, 宮村佳児, 関口隆史, 柿本浩一, 太陽電池用多結晶シリコン[001]、[111]面結晶成長における冷却速度と転位伝播におけるスリップシステムの活性化との関係
, 2013年 第60回応用物理学会春季学術講演会, 2013.03.
267. 井上真翔, 中野智, Karolin Jiptner, 高冰, 原田博文, 関口隆史,福澤理行, 柿本浩一, 太陽電池用結晶Si成長中の転位密度分布解析の評価, 2013年 第60回応用物理学会春季学術講演会, 2013.03.
268. 李建永, Ronit Prakash, Dierre Benjamin, 陳君, 関口隆史,原田博文, 宮村佳児, 大下祥雄, 柿本浩一, 小椋厚志, 太陽電池用鋳造多結晶シリコン中のSiNx不純物の析出, 2013年 第60回応用物理学会春季学術講演会, 2013.03.
269. 井上仁人, 寒川義裕, 影島博之, 柿本浩一, C凝集過程におけるSiC(0001)ステップのテンプレート効果, 2013年 第60回応用物理学会春季学術講演会, 2013.03.
270. 河村貴宏,三木貴文,林寛哉,鈴木泰之,寒川義裕,柿本浩一, GaN薄膜成長におけるN原子取り込み過程の分子動力学シミュレーション, 2013年 第60回応用物理学会春季学術講演会, 2013.03.
271. Akira Nagaoka, Kenji Yoshino, Hideto Miyake, Tomoyasu Taniyama, Koichi Kakimoto, Electrical properties of Cu2ZnSnS4 single crystal, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, 2013.01, [URL], Cu2ZnSnS4 (CZTS) has attracting considerable interest because first principle calculation predict that its electronic properties must be similar to chalcopyrite Cu(In, Ga)Se2 (CIGS). However, the fundamental studies of CZTS, which are single crystal growth and electrical property, are little known. Here, we report on CZTS single crystal growth from solution and electrical properties. Optimum growth condition of CZTS was determined based on CZTS-Sn phase diagram, which was growth temperature 900̊C and X= 70 mol% solution. It is shown that the conduction mechanism have two-path system (defects and band transports), which were characterized by M-VRH for the defect path and typical thermal activation conduction for band path..
272. Tomoe Yayama, Yoshihiro Kangawa, Koichi Kakimoto, The influence of the topmost nitrogen atoms on In incorporation efficiency during InGaN MOVPE growth , Collaborative Conference on Crystal Growth (3CG) 2012, 2012.12.
273. Hirofumi Harada, Yoshiji Miyamura, Takashi Sekiguchi, Bing Gao, Satoshi Nakano, Koichi Kakimoto, High Quality Mono-Crystal Cast Silicon –Present and Future Technology, 6th JSPS Silicon Symposium, 2012.11.
274. Jianyong Li, Takashi Sekigucn, Ronit R. Prakash Yoshiji Miyamura, Hirofumi Harada, Koichi Kakimoto, Atsushi Ogura, Precipitation Behavior of Light Element Impurities in Cast Silicon,, 6th JSPS Silicon Symposium, 2012.11.
275. S. Nakano, B. Gao, K. Kakimoto, Influence of the Location of Heaters on Oxygen Concentration in a Multicrystalline Silicon for Solar Cells, 6th JSPS Silicon Symposium, 2012.11.
276. B. Gao, H. Harada, Y. Miyamura, S. Nakano, K. Kakimoto, Crystal Growth of Large-Size Monocrystalline Silicon by Seed Casting Technique, 6th JSPS Silicon Symposium, 2012.11.
277. Makoto Inoue, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Bing Gao, Koichi Kakimoto, Numerical Analysis of Dislocation Density in Multicrystalline Silicon for Solar Cells by Traveling Crucible Method , 6th JSPS Silicon Symposium, 2012.11.
278. Karolin Jiptner, Masayuki Fukuzawa, Yoshiji Miyamura, Hirofumi Harada,Koichi Kakimoto, Takashi Sekiguchi, Reduction of Residual Strain in Cast-grown Si Ingots by Heat Control in the Low Temperature Region, 6th JSPS Silicon Symposium, 2012.11.
279. 屋山巴,寒川義裕,柿本浩一, MOVPE成長条件下におけるInN(10-1-1)面の表面構造に関する理論検討, 第42回結晶成長国内会議NCCG-42, 2012.11.
280. 速水義之,河村貴宏,鈴木泰之,寒川義裕,柿本浩一, SiC結晶成長の分子動力学シミュレーション, 第42回結晶成長国内会議NCCG-42, 2012.11.
281. 井上真翔,中野智,原田博文,宮村佳児,高冰,柿本浩一, 坩堝移動法による太陽電池用多結晶Si成長中の転位密度分布解析, 第42回結晶成長国内会議NCCG-42, 2012.11.
282. 高冰,中野 智,原田博文,宮村佳児,関口隆史,柿本浩一, 一方向性凝固法を用いた新規種結晶成長における大型単結晶シリコンの転位密度解析, 第42回結晶成長国内会議NCCG-42, 2012.11.
283. 岡村俊之,河村貴宏,鈴木泰之,寒川義裕2,柿本浩一, InGaN混晶の熱伝導率解析, 第42回結晶成長国内会議NCCG-42, 2012.11.
284. 井上仁人,寒川義裕,影島愽之,若林克法,柿本浩一, SiCステップにおけるC原子グラフェン化過程への理論的アプローチ, 第42回結晶成長国内会議NCCG-42, 2012.11.
285. 高冰,中野智,西澤伸一,柿本浩一, PVTを用いたSiCバルク結晶成長における転位および多結晶分布の非定常数値解析, 第42回結晶成長国内会議NCCG-42, 2012.11.
286. B. Gao, H. Harada, Y. Miyamura, S. Nakano, K. Kakimoto, Large-size and complete single crystal growth of monocrystalline silicon by using seed cast-growth technique, , THE 22ND INTERNATIONAL PHOTOVOLTAIC SCIENCE AND ENGINEERING CONFERENCE, 2012.11.
287. Y.Kangawa, B. M. Epelbaum, K. Kakimoto, Intensive Discussion on Growth of Nitride Semiconductors , Applicability of solid-source solution growth (3CG) method to the AlN bulk growth, 2012.10.
288. B. Gao, H. Harada, Y. Miyamura, S. Nakano, and K. Kakimoto, Possibility of Large-Size Single Crystal Growth in Seed Cast-Grown Monocrystalline Silicon, PRiME 2012, 2012.10.
289. K. Kakimoto, Numerical and experimental investigation of directional solidification of silicon with a seed, CSSC6, 2012.10.
290. B. Gao, H. Harada, Y. Miyamura, S. Nakano, and K. Kakimoto, Dislocation Analysis for a New Mushroom-Shaped Growth of Large-Size Monocrystalline Silicon by Seed Casting Technique, PRiME 2012, 2012.10.
291. S.Nakano, Numerical analysis of the new cooling process in multicrystalline silicon grown by unidirectional solidification process, CSSC6, 2012.10.
292. 三木貴文,河村貴宏,鈴木泰之,寒川義裕,柿本浩一, 過剰Ga条件下におけるGaNのMBE成長シミュレーションの開発, 第73回応用物理学会学術講演会, 2012.09.
293. 井上仁人,寒川義裕,影島愽之,若林克法,柿本浩一, SiC(0001)ステップにおける C 原子凝集過程の理論検討, 第73回応用物理学会学術講演会, 2012.09.
294. 屋山 巴,寒川義裕,柿本浩一, MOVPE法によるInGaN薄膜成長におけるIn取り込み量の面方位依存性 , 第73回応用物理学会学術講演会, 2012.09.
295. 高  冰,中野 智,西澤伸一,柿本浩一, PVTを用いたSiCバルク結晶成長における転位および多結晶分布の非定常数値解析, 第73回応用物理学会学術講演会, 2012.09.
296. 宮村佳児,原田博文,Karolin Jiptner,陳  君,李 建永,Ronit Prakash,関口隆史,小島拓人,大下祥雄,小椋厚志,福澤理行,中野 智,高  冰,柿本浩一, 10cm径mono cast Si結晶成長, 第73回応用物理学会学術講演会, 2012.09.
297. 高  冰,中野 智,原田博文,宮村佳児,関口隆史,柿本浩一, 一方向性凝固法を用いた新規種結晶成長における大型単結晶シリコンの転位密度解析, 第73回応用物理学会学術講演会, 2012.09.
298. 井上真翔,柿本浩一,中野 智,原田博文,宮村佳児,高  冰, トラベリングヒーター法による太陽電池用多結晶Si成長中の転位密度分布解析, 第73回応用物理学会学術講演会, 第73回応用物理学会学術講演会, 2012.09.
299. 李 建永,Ronit Roneel Prakash,Dierre Benjamin,陳  君,関口隆史,原田博文,宮村佳児,大下祥雄,柿本浩一,小椋厚志, 多結晶シリコンにおける軽元素析出物のカソードルミネッセンス分析, 第73回応用物理学会学術講演会, 2012.09.
300. 柿本浩一,Bing Gao,中野 智,寒川義裕,原田博文, シリコン結晶系太陽電池の結晶成長と変換効率 , 第73回応用物理学会学術講演会, 2012.09.
301. Koichi KAKIMOTO, Steps of materials science toward PV in Japan, International Summer School on Crystal Growth and Photovoltaic Materials, 2012.08.
302. Masato Inoue, Hiroyuki Kageshima, Yoshihiro Kangawa, Koichi Kakimoto, First principles approach to C aggregation process during 0th graphene growth on SiC(0001), 31st International Conference on the Physics of Semiconductors, ICPS 2012, 2012.07, [URL], The C clustering process during the 0th graphene growth on SiC(0001) was investigated by a first principles approach. It was found that the structure of C clusters is not purely-hexagonal but penta-heptagonal, including pentagons and heptagons. We also revealed that mono-ring clusters, the lowest-energy clusters in vacuum, are no longer the ground-state configuration on SiC(0001). This result suggests a template effect of SiC(0001) for the growth of graphene..
303. Bing Gao, Satoshi Nakano, Koichi Kakimoto, Influence of Back-Diffusion of Iron Impurity on Lifetime Distribution near the Seed-Crystal Interface in Seed Cast-Grown Monocrystalline Silicon by Numerical Modeling, E-MRS 2012 SPRING MEETING, 2012.05, The distribution of minority carrier lifetime near the seed-crystal interface found in seed cast-grown monocrystalline silicon was clarified in this work. The distribution of lifetime first decreases and then increases from a seed to a crystal. Modeling of the temperature- and time-dependent iron diffusion and segregation during crystal growth showed a concentration distribution of an increase followed by a decrease from a seed to a crystal. The consistency between lifetime and iron distribution near the seed-crystal interface indicates that the back-diffusion of iron impurity from silicon melt into the seed at the duration stage before crystal growth is one of the main reasons for lifetime variation near the seed-crystal interface. Therefore, it is essential to reduce the duration time before crystal growth to obtain good-quality monocrystalline silicon..
304. Koichi Kakimoto, Bing Gao, Takuya Shiramomo, Satoshi Nakano, Shinichi Nishizawa, Analysis of growth velocity of SiC growth by the physical vapor transport method, 14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011, 2012.05, [URL], Crystal growth velocity of SiC in a process of physical vapor transport was studied on the basis of numerical calculation including the effect of compressibility, convection and buoyancy effects, flow coupling between argon gas and species of Si, Si 2C and SiC 2, and the Stefan effect. Calculation in a 2D configuration was performed to clarify the effect of pressure on growth velocity. The results revealed that convection plays a role in the measured values that growers interpret as growth velocity based on a diffusion process of argon gas and species of Si, Si 2C and SiC 2..
305. 寒川義裕、柿本浩一, AlN 厚膜成長技術の提案~固体ソース溶液成長法~, 第4回窒化物半導体結晶成長講演会, 2012.04.
306. 屋山巴,寒川義裕、柿本浩一, InGaN薄膜におけるIn取り込み量の面方位依存性に関する新規モデルの提案, 第4回窒化物半導体結晶成長講演会, 2012.04.
307. 屋山 巴,寒川 義裕,柿本 浩一, nGaN薄膜成長におけるIn取り込み量の面方位依存性に関する理論検討, 第59回応用物理学関係連合講演会, 2012.03.
308. 速水義之,河村貴宏,鈴木泰之,柿本浩一, 分子動力学法によるSiC結晶中の点欠陥の拡散挙動解析, 第59回応用物理学関係連合講演会, 2012.03.
309. 井上 仁人, 影島 愽之, 寒川 義裕, 柿本 浩一, SiC(0001)上グラフェン成長初期 C 凝集過程の第一原理計算による検討, 第59回応用物理学関係連合講演会, 2012.03.
310. 高  冰,中野 智,原田博文,宮村佳児,関口隆史,柿本浩一, 太陽電池用多結晶シリコン育成時における酸素不純物の低減, 第59回応用物理学関係連合講演会, 2012.03.
311. 中野 智, 高 冰, 原田 博文,関口 隆史,李 維東,寒川 義裕,柿本 浩一, 数値解析を用いた太陽電池用多結晶シリコン育成中における新規冷却過程の提案, 第59回応用物理学関係連合講演会, 2012.03.
312. 白桃拓哉,中野 智,高  冰,西澤伸一,寒川義裕,柿本浩一, 不純物ドーピングがSiC 結晶多形の安定性に及ぼす影響, 第59回応用物理学関係連合講演会, 2012.03.
313. 立花福久,楠木宏毅,土屋佑樹,鮫島 崇,小島拓人,新船幸二,柿本浩一,宮村佳児,原田博文,関口隆史, 疑似単結晶シリコン中の軽元素不純物が結晶欠陥に与える影響, 第59回応用物理学関係連合講演会, 2012.03.
314. 李 建永,関口隆史,原田博文,宮村佳児,陳  君,大下祥雄,柿本浩一,小椋厚志, 大粒径多結晶シリコンにおける軽元素の析出挙動, 第59回応用物理学関係連合講演会, 2012.03.
315. 柿本浩一,Bing Gao,中野 智,寒川義裕, 元素及び化合物半導体の格子歪と欠陥, 第59回応用物理学関係連合講演会, 2012.03.
316. Y. Kangawa, J. Kawano, K. Kakimoto , Surface model of impurity incorporation in III-V-N semiconductors for multi-junction solar cell, International Symposium on Innovative Solar Cells 2012, 2012.03.
317. 井上 仁人, 寒川 義裕 ,柿本 浩一, 結晶成長:実験と理論の最新の展開, 低温研ワークショップ, 2012.02.
318. 寒川義裕、柿本浩一, 固体ソース溶液成長法により作製したAlN厚膜中の微細組織, 阪大産研 若手セミナー, 2012.02.
319. Masato Inoue, Yoshihiro Kangawa, Koichi Kakimoto, Dependence of Graphene growth mechanism on SiC(0001) surface orientation, 結晶成長自由討論会(放談会), 2012.01.
320. B. Gao, T. Shiramomo, S. Nakano, S. Nishizawa, K. Kakimoto, Numerical and thermal dynamics analysis for SiC sublimation growth, 結晶成長自由討論会(放談会), 2012.01.
321. T. Tachibana, T. Sameshima, T. Kojima, K. Arafune, Koichi Kakimoto, Y. Miyamura, H. Harada, T. Sekiguchi, Y. Ohshita, A. Ogura, Evaluation of silicon substrates fabricated by seeding cast technique, 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14, 2012, [URL], We evaluated the properties of crystalline defects in silicon substrate, and clarified the origin of small-angle grain boundaries. In order to eliminate the effects of grain boundaries, the ingot was fabricated by unidirectional solidification technique with seed crystal. In single-crystalline region, σ3 twin boundaries and SiC precipitates were observed near the seed crystal. No obvious correlation between twin boundaries and precipitates was observed. These defects decreased once and the precipitations appeared again. The density of precipitates increased through the crystal growth procedure. These precipitates were consisted of Si, C, and N. After the precipitation density increased, the small-angle grain boundaries appeared and some precipitates were observed at the boundaries. We considered the precipitation consisted of light element impurities such as C and N was one of the major origins of the small-angle grain boundary generation..
322. Jun Kawano, Yoshihiro Kangawa, Koichi Kakimoto, N substitution in GaAs(001) surface under an atomosphere of hydrogen, 21th International Photovoltaic Science and Engineering Conference, 2011.12.
323. Jun Kawano, Yoshihiro Kangawa, Tomoe Yayama, Tomonori Ito, Koichi Kakimoto, Akinori Koukitu, Thermodynamic analysis for the prediction of N composition in coherently grown GaAsN for a multi-junction solar cell, 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, 2011.12, [URL], Thermodynamic analysis was performed to investigate the coherent growth of GaAs 1-xN x thin films with low N content. In the present study, a new algorithm of the simulation code was developed to theoretically predict the relationship between solid composition and growth condition. This algorithm is applicable to wider varieties of combinations of gaseous sources than is the traditional algorithm. The system using trimethylgalllium (TMG), AsH 3, and NH 3 was analyzed with the new code, and the results showed that the required input partial pressure ratio of NH 3 to the group-V element is over 99% for incorporation of a small percent of N into a solid. It is difficult to incorporate N into the solid when the input V/III ratio is low, while in the case of a high input V/III ratio, stable growth with a small percent of N can proceed. In the case of coherently grown GaAs 1-xN x, the lattice constraint from the substrate would suppress the incorporation of nitrogen. On the other hand, a higher input Ga partial pressure ratio enhances the stable growth of GaAs 1-xN x with a small N content, though this condition tends to easily induce generation of dislocations. Furthermore, a much lower optimum N/As ratio in input gas can be achieved in the system with dimethylhydrazine (DMHy). This result confirms that the difference in gaseous sources has a great effect on N incorporation. When determining well-optimized experimental growth conditions, these influences including crystallinity should all be considered..
324. 河村貴宏,寒川義裕,柿本浩一,小竹茂夫,鈴木泰之, N原子の拡散を制御したGaN溶液成長シミュレーション, 第41回結晶成長国内会議, 2011.11.
325. 中野 智,高 冰, 柿本 浩一, 太陽電池用多結晶シリコン成長における酸素濃度に対するヒーターシステムの影響, 第41回結晶成長国内会議, 2011.11.
326. 高 冰, 中野 智,原田 博文,宮村 佳児,関口 隆史,柿本 浩一, 単結晶の種結晶成長を用いた複雑な固液界面形状に対する結晶異方性を考慮した熱応力解析, 第41回結晶成長国内会議, 2011.11.
327. 寒川義裕、柿本浩一, 固体原料を用いたAlN 溶液成長法の提案, 第41回結晶成長国内会議, 2011.11.
328. 川野潤,寒川義裕,屋山巴,伊藤智徳,柿本浩一,纐纈明伯, GaAsN気相エピタキシーにおける窒素取り込みに関する理論的検討, 第41回結晶成長国内会議, 2011.11.
329. 川野潤,三宅亮,下林典正,北村雅夫, 炭酸カルシウムにおける準安定相の形成に関する考察, 第41回結晶成長国内会議, 2011.11.
330. Koichi Kakimoto, High-purity multicrystalline silicon production in unidirectional solidification furnace, CSSC-5, 2011.11.
331. K.Kakimoto, Opening up a new world of energy and environment by heat and mass transfer, 2011年中国工程热物理学会传热传质学术会议, 2011.10.
332. K. Kakimoto, B. Gao, T. Shiramomo, S. Nakano, Y. Kangawa, and S. Nishizawa, Thermodynamic Analysis of SiC and AlN Growth by Physical Vapour Transport Method, DRIP-XIV, 2011.09.
333. Nakano, B. Gao, K. Kakimoto, Numerical Analysis of Heating System Dependence to Oxygen Concentration in Multicrystalline Silicon for Solar Cells, DRIP-XIV, 2011.09.
334. Koichi Kakimoto, Bing Gao, Takuya Shiramomo, Satoshi Nakano, and Shin-ichi Nishizawa, Thermodynamic Analysis of SiC and AlN Growth by Physical Vapor Deposition, The 2011 International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), 2011.09.
335. 柿本浩一,西澤伸一, コストを含めたSiCウエハ現状と将来展望, 平成23年電気学会産業応用部門大会(JIASC2011), 2011.09.
336. T. Tachibana, T. Sameshima, N. Miyazaki, T. Kojima, K. Arafune, K. Kakimoto, Y. Miyamura, H. Harada, T. Sekiguchi, Y. Ohshita, and A. Ogura, Evaluation of crystalline defects in silicon ingots fabricated by seeding cast growth,, 26th European Photovoltaic Solar Energy Conference and Exhibition, 2011.09.
337. M. Inoue, Y. Kangawa, H. Kageshima, K. Wakabayashi, K. Kakimoto, Theoretical approach to anisotropic growth mechanism of graphene on a vicinal SiC (0001) surface, 22nd European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides 2011, 2011.09.
338. R. Toki, Y. Kangawa, K. Kakimoto, Growth of AlN using Li-Ga-N solution, 22nd European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides 2011, 2011.09.
339. 中野 智,高 冰, 柿本 浩一, 数値解析を用いた太陽電池用多結晶シリコン育成時における 酸素濃度のヒーター位置依存性, 第72回応用物理学会学術講演会, 2011.09.
340. 高 冰,中野 智,柿本浩一,原田博文,宮村佳児,関口隆史, 一方向性凝固法を用いた単結晶の種結晶成長中における坩堝近傍での多結晶発生の抑制, 第72回応用物理学会学術講演会, 2011.09.
341. 立花福久,鮫島 崇,小島拓人,新船幸二,柿本浩一,宮村佳児,原田博文,関口隆史,大下祥雄,小椋厚志, 種結晶を用いて作製したシリコン基板中の結晶欠陥に関する評価(2), 第72回応用物理学会学術講演会, 第72回応用物理学会学術講演会, 2011.09.
342. 井上 仁人,寒川 義裕,影島 愽之,若林 克法,柿本 浩一, [1100]方向微傾斜SiC(0001)面における0層グラフェンの異方成長機構, 第72回応用物理学会学術講演会, 2011.09.
343. 川野 潤,寒川 義裕,柿本 浩一 , 水素吸着GaAs表面におけるN取り込み過程の第一原理計算による考察, 第72回応用物理学会学術講演会, 2011.08.
344. 河村貴宏,寒川義裕,柿本浩一,小竹茂夫,鈴木泰之 , GaN溶液成長におけるN原子の拡散挙動の数値解析, 第72回応用物理学会学術講演会, 2011.08.
345. 高 冰, 中野 智,柿本 浩一, PVTを用いた連成圧縮性流れ解法によるAlN結晶成長の数値解析と最適化, 第72回応用物理学会学術講演会, 2011.08.
346. 白桃拓哉,中野 智,高 冰,西澤伸一,寒川義裕,柿本浩一, 表面ヘキサゴナリティと二次元核生成理論に基づいたSiC結晶多形の圧力温度依存性の解析, 第72回応用物理学会学術講演会, 2011.08.
347. Bing Gao, Satoshi Nakano, Koichi Kakimoto, Numerical simulation and optimization during AlN PVT crystal growth, The 18th American Conference on Crystal Growth and Epitaxy, 2011.08.
348. Satoshi NAKANO, Bing GAO, Koichi KAKIMOTO, Effect of heating system on oxygen concentration in multicrystalline silicon for solar cells, The 18th American Conference on Crystal Growth and Epitaxy, 2011.08.
349. Koichi Kakimoto, Thermodynamical analysis of crystal growth of Si, SiC and AlN bulk crystals by a global model, The 18th American Conference on Crystal Growth and Epitaxy, 2011.08.
350. Bing Gao, Satoshi Nakano, HirofumiHarada, Yoshiji Miyamura, Takashi Sekiguchi, Koichi Kakimoto, Reduction of multicrystalline silicon near the crucible wall during seeded growth of monocrystalline silicon in a unidirectional solidification furnace, The 18th American Conference on Crystal Growth and Epitaxy, 2011.08.
351. Koichi Kakimoto, Thermodynamical analysis of stoicheometry and polytype formation of SiC growth by physical vapor transport method, The 18th American Conference on Crystal Growth and Epitaxy, 2011.08.
352. Takuya Shiramomo, Satoshi Nakano, Bing Gao, Shin-ichi Nishizawa, Yoshihiro Kangawa, Koichi Kakimoto, Study of polytype stability during PVT growth of SiC using 2D nucleation theory, The 18th American Conference on Crystal Growth and Epitaxy, 2011.08.
353. Koichi KAKIMOTO ,Bing GAO and Satoshi NAKANO, THERMODYNAMIC ANALYSIS OF SiC AND ALN GROWTH BY PHYSICAL VAPOR TRANSPORT METHOD, 12th IBWAP, 2011.07.
354. Bing GAO, Satoshi NAKANO, Koichi KAKIMOTO, Numerical Simulation and Optimization During AIN PVT Crystal Growth, The 5th Asian Conference on Crystal Growth and Crystal Technology, 2011.07.
355. M. Inoue, Y. Kangawa, H. Kageshima, K. Wakabayashi, Kakimoto, Theoretical approach to anisotropic growth process of graphene on vicinal SiC(0001) surfaces tilting toward [1100], 第30回電子材料シンポジウム, 2011.06.
356. Bing GAO, Satoshi NAKANO, Koichi KAKIMOTO, High Purity Multicrystalline Silicon Production in Unidirectional Solidification Furnace, The 5th Asian Conference on Crystal Growth and Crystal Technology, 2011.06.
357. D. Bliss, R. Fornari, and K. Kakimoto , Novel equipments and technologies for bulk crystal growth, IWCGT-5, 2011.06.
358. 土岐 隆太郎,寒川 義裕,屋山 巴,柿本 浩一, Li-Al-N系溶液を用いたAlN結晶成長, 第3回窒化物半導体結晶成長講演会, 2011.06.
359. Bing GAO, Satoshi NAKANO, Koichi KAKIMOTO, Numerical simulation of AlN PVT growth by fully coupled compressible flow solver, 第3回窒化物半導体結晶成長講演会, 2011.06.
360. 屋山 巴,川野 潤,寒川 義裕,柿本 浩一,纐纈 明伯, InGaN薄膜作製におけるIn取り込み量の面方位依存性に関する理論検討, 第3回窒化物半導体結晶成長講演会, 2011.06.
361. 屋山 巴,川野 潤,寒川義裕,柿本浩一,纐纈明伯, InGaN 成長における In 取り込み量の面方位依存性に関する理論検討, 2011年春季第58回応用物理学関係連合講演会, 2011.03.
362. 河村貴宏,寒川義裕,柿本浩一,小竹茂夫,鈴木泰之, GaN 溶液成長初期過程の分子動力学シミュレーション, 2011年春季第58回応用物理学関係連合講演会, 2011.03.
363. 立花福久,鮫島 崇,小島拓人,新船幸二,柿本浩一,宮村佳児,原田博文,関口隆史,大下祥雄,小椋厚志, 種結晶を用いて一方向凝固法で作製したシリコン基板の評価, 2011年春季第58回応用物理学関係連合講演会, 2011.03.
364. 高  冰,中野 智,柿本浩一, 一方向性凝固法における高純度多結晶シリコンの作製について, 2011年春季第58回応用物理学関係連合講演会, 2011.03.
365. 井上仁人,寒川義裕,影島愽之,若林克法,柿本浩一, [1100]方向微傾斜SiC 表面におけるグラフェンの異方成長機構, 2011年春季第58回応用物理学関係連合講演会, 2011.03.
366. 柿本浩一,Bing Gao,中野 智,寒川義裕, 太陽電池用多結晶シリコン中の軽元素濃度の制御, 2011年春季第58回応用物理学関係連合講演会, 2011.03.
367. 川野 潤,寒川義裕,屋山 巴,柿本浩一,纐纈明伯 , 熱力学解析による GaAsN 成長における原料ガスの違いによる影響の検討, 2011年春季第58回応用物理学関係連合講演会, 2011.03.
368. 川野 潤,寒川義裕,柿本浩一, 水素吸着した GaAs(N) 表面における窒素取り込み, 2011年春季第58回応用物理学関係連合講演会, 2011.03.
369. 寒川義裕,土岐隆太郎,屋山 巴,柿本浩一, AlN バルク成長に向けた 2 相溶液成長法の提案, 2011年春季第58回応用物理学関係連合講演会, 2011.03.
370. 高  冰,中野 智,柿本浩一, PVT を用いた AlN 結晶成長の数値解析と最適化, 2011年春季第58回応用物理学関係連合講演会, 2011.03.
371. Frederic Mercier,柿本浩一,西澤伸一, SiC 表面積層構造におよぼす不純物効果の第一原理解析, 2011年春季第58回応用物理学関係連合講演会, 2011.03.
372. 柿本浩一,白桃拓哉,高  冰,中野 智,寒川義裕,西澤伸一 , PVT を用いた SiC 結晶成長における結晶多型の安定性解析, 2011年春季第58回応用物理学関係連合講演会, 2011.03.
373. 白桃拓哉,柿本浩一,高  冰,中野 智,寒川義裕,西澤伸一 , 2 次元核生成に基づいた SiC 結晶多形の圧力温度依存性の解析, 2011年春季第58回応用物理学関係連合講演会, 2011.03.
374. 乾 史憲,高  冰,中野 智,寒川義裕,柿本浩一, SiC 溶液成長における炉内温度分布が結晶成長速度へ与える影響, 2011年春季第58回応用物理学関係連合講演会, 2011.03.
375. Y. Kangawa, B. M. Epelbaum, K. Kakimoto, Two-phase-solution growth of AlN on self-nucleated AlN crystal, 7th International Workshop on Bulk Nitrides Semiconductors, 2011.03.
376. K. Kakimoto, Steps of material science towards PV in Japan and Fareast countries, GPCCG 2011, 2011.03.
377. TAKAHIRO KAWAMURA, YOSHIHIRO KANGAWA, KOICHI KAKIMOTO, SHIGEO KOTAKE AND YASUYUKI SUZUKI, Molecular Dynamics Simulation of Solution Growth of GaN, 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, 2011.03.
378. 井上仁人,寒川義裕,柿本浩一, 微傾斜SiC(0001)面におけるグラフェン核形成機構の傾斜方向依存性, 第3回九大グラフェン研究会, 2011.02.
379. 柿本浩一、Gao Bing、X. J. Chen, 白桃拓哉、中野 智、寒川義裕、西澤伸一, SiC結晶成長の最近の発展, パワーデバイス用シリコンおよび関連半導体材料に関する研究会, 2011.01.
380. 寒川義裕、柿本浩一, 固体ソースAlN溶液成長技術の提案, 第154回KASTECセミナー, 2011.01.
381. Zaoyang Li, Lijun Liu, Koichi Kakimoto, Development and application of a structured/unstructured combined mesh scheme for global modeling of a directional solidification process of silicon, China Semiconductor Technology International Conference 2010, CSTIC 2010, 2010.12, [URL], In order to improve the accuracy and efficiency of global modeling of a directional solidification process for solar silicon, we developed a structured/unstructured combined mesh scheme. The multi-block structured mesh was used to discretize those subdomains with regular boundaries. The unstructured mesh was used to discretize those sub-domains wim highly irregular boundaries. Then it was applied in the global modeling of heat transfer for a directional solidification process to investigate the effect of argon flow rate on heat transfer and impurities transport (oxygen as an example) in the furnace. It was found that the argon flow has little effect on the global heat transfer compared with thermal radiation, while its effect on impurities transport is remarkable. The amount of oxygen carried away by the argon flow at the melt surface is closely correlated with the argon flow rate..
382. Xin Liu, Lijun Liu, Yuan Wang, Koichi Kakimoto, Modeling of the 3D unsteady melt flow in an industrial-scale Cz-Si crystal growth using LES method, China Semiconductor Technology International Conference 2010, CSTIC 2010, 2010.12, [URL], A computational model was presented for the 3D unsteady turbulent melt flow in an industrial-scale Cz-Si growth with Large Eddy Simulation (LES) method in curvilinear grids. The turbulent transport of momentum and heat in the melt was investigated. The turbulent nature of unsteadiness and three-dimensionality of the melt flow was verified. Fluctuation of the thermal field was obviously observed in the melt region close to the melt-crystal interface..
383. B. Gao, Koichi Kakimoto, S. Nakano, Numerical analysis of oxygen and carbon transport in a unidirectional solidification furnace, Photovoltaics for the 21 Century 5 - 216th ECS Meeting, 2010.12, [URL], A global simulation of coupled oxygen and carbon transport in a unidirectional solidification furnace was carried out for accurate prediction of distributions of carbon and oxygen impurities in multicrystalline silicon material for solar cells. Both the gas flow and silicon melt flow were coupled each other. Five chemical reactions were taken into account during the transportation of the impurities..
384. B. Gao, Koichi Kakimoto, S. Nakano, Numerical analysis of oxygen and carbon transport in a unidirectional solidification furnace, China Semiconductor Technology International Conference 2010, CSTIC 2010, 2010.12, [URL], A global simulation of coupled oxygen and carbon transport in a unidirectional solidification furnace was carried out for accurate prediction of distributions of carbon and oxygen impurities in multicrystalline silicon material for solar cells. Both the gas flow and silicon melt flow were coupled each other. Five chemical reactions were taken into account during the transportation of the impurities..
385. Koichi Kakimoto, CONTROL OF CONCENTRATIONS OF LIGHT ELEMENTS IN CRYSTALLINE SILICON FOR SOLAR CELLS, 2010 International Symposium on Crystal Growth (The 20th Anniversary of the Korean Association of Crystal Growth ) , 2010.11.
386. 河村 貴宏,小竹 茂夫,鈴木 泰之,寒川 義裕,柿本 浩一, 分子動力学法によるGaNの溶液成長シミュレーション, 窒化物・ナノエレクトロニクス材料研究センター講演会, 2010.11.
387. K. Kakimoto, Control of impurity in crystalline silicon for PVs, The 4th International Workshop on Science and Technology of Crystalline Si Solar Cells (CSSC4), The 4th International Workshop on Science and Technology of Crystalline Si Solar Cells (CSSC4), 2010.10.
388. S. Hisamatsu, S. Nakano, X. J. Chen, Y. Kangawa, K. Kakimoto, Effect of heater transfer rate on maximum dislocation density in multicrystalline silicon grown by the travelling heater method (THM), The 4th International Workshop on Science and Technology of Crystalline Si Solar Cells (CSSC4), 2010.10.
389. 高 冰、中野 智、陳 雪江、西澤伸一、柿本浩一, PVTを用いたSiC結晶成長における化学量論的数値解析, SiC及び関連ワイドギャップ半導体研究会第19回講演会, 2010.10.
390. 乾 史憲、高 冰、中野 智、寒川義裕、柿本浩, SiC溶液成長における低周波電磁波撹拌の影響, SiC及び関連ワイドギャップ半導体研究会第19回講演会, 2010.10.
391. Kawano, K. Ikeda, Y. Kangawa, K. Kakimoto, Theoretical analysis of N composition in epitaxially grown GaAsN for multi-junction solar cell, 3rd International Symposium on Innovative Solar Cells, 2010.10.
392. J. Kawano, Y. Kangawa, K. Kakimoto, Prediction of N composition in coherently grown GaAsN thin films for multi-junction solar cell, 3rd Super High Efficiency Solar Cell Workshop, 2010.10.
393. Koichi Kakimoto, Control of Light Elements in Multi-crystalline Silicon Grown by Unidirectional Solidification using Numerical and Experimental Analysis, Photovoltaic Materials and Manufacturing Issues, 2010.10.
394. 柿本浩一, 太陽電池と LSI 用シリコン結晶における欠陥の動的シミュレーション, 日本機械学会第23回計算力学講演会, 2010.09.
395. 井上 仁人, 寒川 義裕, 若林 克法, 影島 博之, 柿本 浩一, SiC表面におけるグラフェン成長の初期過程, 2010年秋季第71回応用物理学会学術講演会, 2010.09.
396. 中野 智, 陳 雪江, 高 冰, 柿本浩一, 数値解析を用いた太陽電池用多結晶シリコンインゴット中転位密度の冷却速度依存性, 2010年秋季第71回応用物理学会学術講演会, 2010.09.
397. 久松 翔,中野 智,陳 雪江,柿本 浩一, ヒーター輸送法により成長させた太陽電池用多結晶シリコン中の転位密度の数値解析, 2010年秋季第71回応用物理学会学術講演会, 2010.09.
398. Koichi Kakimoto, Numerical analysis of multi-crystalline Si crystal growth, E-MRS 2010 Fall Meeting, E-MRS 2010 Fall Meeting, 2010.09.
399. B. Gao, S, Nakano, S. Nishizawa, K. Kakimoto, Stoichiometry simulation during SiC PVT crystal growth, 2010年秋季第71回応用物理学会学術講演会, 2010.09.
400. 川野 潤, 池田和磨, 寒川義裕, 柿本浩一, 纐纈明伯, 熱力学解析によるGaAsN成長における基盤拘束の寄与の検討, 2010年秋季第71回応用物理学会学術講演会, 2010.09.
401. B. Gao, S. Nakano, K. Kakimoto, Global simulation of coupled carbon and oxygen transport in Czochralski furnace, The 16th. International Conference on Crystal Growth (ICCG-16), 2010.08.
402. Koichi Kakimoto, How numerical calculation on crystal growth contributes to the quality of crystals of silicon and SiC, The 16th. International Conference on Crystal Growth (ICCG-16), 2010.08.
403. B. Gao , X. J. Chen, S. Nakano, S. Nishizawa, K. Kakimoto, Analysis of SiC single crystal sublimation growth by fully coupled compressible multi-phase flow simulation, The 16th. International Conference on Crystal Growth (ICCG-16), 2010.08.
404. T. Yayama, Y. Kangawa, K. Kakimoto, Differential thermal analysis of Li3N-Al pseudobinary system for AlN growth,, The 16th. International Conference on Crystal Growth (ICCG-16), 2010.08.
405. B. Gao, X. J. Chen, S. Nakano, K. Kakimoto, A proposal of crystal growth method of high-purity multicrystalline silicon in a unidirectional solidification furnace, The 16th. International Conference on Crystal Growth (ICCG-16), 2010.08.
406. S. Nakano, X. J. Chen, B. Gao, K. Kakimoto, Numerical analysis of cooling rate dependence on dislocation density in multicrystalline silicon for solar cells, The 16th. International Conference on Crystal Growth (ICCG-16), 2010.08.
407. Koichi Kakimoto, Crystal growth of semiconductor bulk crystals, 14th International Summer School on Crystal Growth, ISSCG14, 2010.08, [URL], This course is aimed at showing how to grow bulk crystals by using several methods. The course involves the following points. The growth methods of Bridgman and Czochralski will be introduced. The course also focuses on the mechanism of some processes with consideration of the basic phenomenon. Experimental and numerical examples of the methods will also be introduced..
408. 川野 潤, 池田和磨, 寒川義裕, 柿本浩一, III-V-N系半導体成長シミュレーターの研究開発, NEDO新エネルギー技術成果報告会2010, 2010.07.
409. 井上 仁人, 寒川 義裕, 若林 克法, 柿本 浩一, Tight-binding approach to initial stage of graphitization on SiC surface, EMS第29回電子材料シンポジウム, 2010.07.
410. 屋山 巴, 寒川 義裕,柿本 浩一, AlN成長に向けたLi3N-Al擬二元系状態図, EMS第29回電子材料シンポジウム, 2010.07.
411. 柿本浩一, シリコン結晶系太陽電池の結晶成長の基礎, 第7回 「次世代の太陽光発電システム」シンポジウム, 2010.07.
412. T.Yayama, Y. Kangawa, K. Kakimoto, Calculation of Phase Diagrams of Li3N-Al pseudo binary system for AlN Growth, The 3rd. International Symposium on Growth of III-Nitride 2010 (ISGN-3), 2010.07.
413. Koichi Kakimoto, Numerical analysis of light elements transport in a unidirectional solidification furnace, E-MRS 2010 Spring Meeting, 2010.06.
414. Koichi Kakimoto, How numerical calculation of crystal growth contributes to the quality of silicon and SiC crystals , IX International Conference of Polish Society for Crystal Growth - ICPSCG-9, 2010.05.
415. 屋山 巴, 寒川 義裕, 柿本 浩一, AlN溶液成長に向けたLi3N-Al擬二元系状態図解析, 2010年第2回窒化物半導体結晶成長講演会, 2010.05.
416. B. Gao, S. Nakano, K. Kakimoto, Crystal growth of high-purity multicrystalline silicon for solar cells, 2010年春季第57回応用物理学会学術講演会, 2010.03.
417. B. Gao, X. J. Chen, S. Nakano, S. Nishizawa, K. Kakimoto, Fully coupled compressible multi-phase flow simulation of SiC sublimation growth, 2010年春季第57回応用物理学会学術講演会, 2010.03.
418. K. Kakimoto, B. Gao, S. Nakano, Numerical Analysis of Oxygen and Carbon Transport in a Unidirectional Solidification Furnace, CSTIC 2010, 2010.03.
419. 中野 智,陳 雪江,高 冰,柿本浩一, 冷却過程における太陽電池用多結晶シリコンインゴット中転位密度の数値解析, 2010年春季第57回応用物理学会学術講演会, 2010.03.
420. 屋山 巴, 寒川 義裕, 柿本 浩一, AlN溶液成長に向けたLi-Al-N三元系状態図解析, 2010年春季第57回応用物理学会学術講演会, 2010.03.
421. 陳 雪江,高 冰,中野 智,西澤 伸一,柿本 浩一, 総合伝熱解析によるSiC双方向成長法(D2S法)の研究, 2010年春季第57回応用物理学会学術講演会, 2010.03.
422. Kazuma Ikeda, Yoshihiro Kangawa, Koichi Kakimoto, Calculation of phase diagram for the growth of III-V-N semiconductors in multi-junction solar cell, 2nd International Symposium on Innovative Solar Cells, 2009.12.
423. Kazuma Ikeda, Yoshihiro Kangawa, Koichi Kakimoto, Structural stability of strained GaAsN layer in multi-junction solar cell, 2nd Super High Efficiency Solar Cell Workshop, 2009.12.
424. Xin Liu, Lijun Liu, Zaoyang Li, Yuan Wang, Koichi Kakimoto, Prediction of melt-crystal interface shape and melt convection in a large-scale CZ-Si growth system using RANS and LES methods in global simulation, ISTC/CSTIC 2009 (CISTC), 2009.12, [URL], Global simulations were performed for a large-scale CZ-Si growth system, in which three models were tested to predict the turbulent melt flow. The three turbulence models are the standard k-ε turbulence model using wall functions at solid boundaries, a modified two-layer k-ε turbulence model in RANS method and the standard Smagorinsky SGS model in LES method, respectively. The comparison of the simulation results obtained with these different models showed that each turbulence model has its own features in prediction of the melt convection and the melt-crystal interface shape in a large-scale CZ-Si growth system..
425. X. J. Chen, S. Nakano, L. J. Liu, Koichi Kakimoto, Simulation analysis of point defects in silicon ingot during unidirectional solidification process for solar cells, ISTC/CSTIC 2009 (CISTC), 2009.12, [URL], A transient global model was used to obtain the solution of a thermal field within the entire furnace of a unidirectional solidification process. The melt-solid interface shape was obtained by a dynamic interface tracking method. Then, based on the global solution of heat transfer, the effects of growth rate Vg, temperature gradient G and ratio Vg/G on point defects were analyzed. Finally, several different melt-solid interface shapes were obtained by using different solidification times. Then the effects of solidification time on ratio Vg/G and point defects were also studied..
426. 高 冰,中野 智, 柿本 浩一, 太陽電池用多結晶シリコン育成用一方向性凝固炉における炭素及び酸素輸送の総合輸送解析, 第39回結晶成長国内会議, 2009.11.
427. 高 冰,中野 智, 柿本 浩一, Czochralski炉における炭素及び酸素輸送の総合輸送解析, 第39回結晶成長国内会議, 2009.11.
428. Y. Kangawa, K. Kakimoto , AlN synthesis on AlN/SiC template using Li-Al-N solvent, 8th International Conference on Nitride Semiconductors, 2009.10.
429. T. Yayama, Y. Kangawa, K. Kakimoto, A. Koukitu, Theoritical analyses of In incorporation and compositionalinstability in coherently grown InGaN thin films, 8th International Conference on Nitride Semiconductors, 2009.10.
430. Koichi KAKIMOTO, Lijun Liu, X. J. Chen, Hitoshi Matsuo, Hiroaki Miyazawa, Sho Hisamatsu, Satoshi Nakano and Yoshihiro Kangawa , Numerical investigation of heat and mass transfer during a unidirectional solidification process in crystalline silicon for solar cells , 216th ECS Meeting, 2009.10.
431. K. Kakimoto, H. Matsuo, S. Hisamatsu, B. Ganesh, G. Bing, X.J. Chen, L. Liu, H. Miyazawa and Y. Kangawa, , Numerical analysis of mc-Si crystal growth, GADEST 2009, 2009.09.
432. 柿本浩一, 半導体結晶成長の数値解析と育成実験, 日本セラミックス協会2009年第22回秋季シンポジウム, 2009.09.
433. 陳 雪江, 中野 智, 柿本 浩一 , 一方向性凝固法における角型坩堝内シリコンインゴット中の熱応力と転位の三次元解析, 2009年秋季第70回応用物理学会学術講演会, 2009.09.
434. 高 冰, 中野 智, 柿本 浩一, 太陽電池用多結晶シリコン育成用一方向性凝固炉における炭素及び酸素輸送の 総合輸送解析, 2009年秋季第70回応用物理学会学術講演会, 2009.09.
435. 寒川義裕, 柿本浩一 , Li-Al-N 溶液を用いたAlN/SiC テンプレート上へのAlN 成長, 2009年秋季第70回応用物理学会学術講演会, 2009.09.
436. 高 冰, 中野 智, 柿本 浩一, Czochralski炉における炭素及び酸素輸送の総合輸送解析, 2009年秋季第70回応用物理学会学術講演会, 2009.09.
437. 中野 智, 陳 雪江, 高 冰, 柿本 浩一, シリコン多結晶育成時における結晶成長速度と炉の大きさの固液界面形状に与える影響, 2009年秋季第70回応用物理学会学術講演会, 2009.09.
438. Yoshihiro Kangawa and Koichi Kakimoto , Possibility of AlN growth using Li-Al-N solvent, 6th International Workshop on Bulk Nitride Semiconductors , IWBNS-VI, 2009.08.
439. Koichi KAKIMOTO, Bulk crystal growth from the melt: experimental and numerical approaches, ROMANIAN CONFERENCE ON ADVANCED MATERIALS, ROCAM 2009, 2009.08.
440. Gao Bing, Koichi Kakimoto, Effects of Argon Gas Flow on the Carbon Concentration in Unidirectional Solidification Multicrystalline Silicon, IWMCG-6, 2009.08.
441. Koichi Kakimoto, Sho Hisamatsu, X. J.Chen, Hotoshi Matsuo, HiroakiMiyazawa, Satoshi Nakano , Lijun Liu, Yoshihiro,Kangawa , Numerical investigation of heat and mass transfer during a unidirectional solidification process in crystalline silicon for solar cells, IWMCG-6, 2009.08.
442. Y. Kangawa, N. Kuwano and K. Kakimoto , Microstructures in AlN/sapphire grown by vapor phase epitaxy using Al and Li3N, EMS第28回電子材料シンポジウム, 2009.07.
443. T. Yayama, Y. Kangawa, K. Kakimoto and A. Koukitu, Control of indium composition in coherently grown InGaN thin films , EMS第28回電子材料シンポジウム, 2009.07.
444. Xuejiang Chen, Satoshi Nakano, Lijun Liu, and Koichi Kakimoto , Simulation for point defects in unidirectional solidified single silicon for solar cells, 3rd International Workshop on Science and Technology of Crystalline Si Solar Cells, 2009.06.
445. Koichi Kakimoto , Numerical investigation of solidification process of multi-crystalline silicon grown by directional solidification method, 3rd International Workshop on Science and Technology of Crystalline Si Solar Cells, 3rd International Workshop on Science and Technology of Crystalline Si Solar Cells, 2009.06.
446. 屋山 巴, 寒川 義裕, 柿本 浩一, 纐纈明伯, 基板拘束を受けたInGaN薄膜におけるIn取り込み量の予測, 2009年第1回窒化物半導体結晶成長講演会, 2009.05.
447. Koichi Kakimoto, Heat and Impurity Transfer Mechanics of Czochralski and Directional Solidification Processes, ISTC/CSTIC 2009, 2009.03.
448. H. Matsuo, S. Hisamatsu, Y. Kangawa, S. Nakano, K. Arafune, Y. Ohshita, M. Yamaguchi, K. Kakimoto , Distributions of light elements and their precipitations grown by unidirectional solidification in multicrystalline silicon for solar cell, ISTC/CSTIC 2009, 2009.03.
449. Yoshihiro Kangawa Tomoe Yayama, Koichi Kakimoto, Akinori Koukitu, Control of In composition in InGaN thin films for multi-junction solar cells,, International Symposium on Innovative Solar Cells 2009, 2009.03.
450. 松尾 整,久松 翔,寒川 義裕,柿本 浩一, 太陽電池用多結晶シリコン中の析出物が微結晶形成に及ぼす影響, 2009年春季第56回応用物理学関係連合講演会, 2009.03.
451. 久松 翔,松尾 整,中野 智,寒川 義裕,柿本 浩一, 太陽電池用多結晶Si中のSi2N2OとSi3N4の析出に関する数値解析, 2009年春季第56回応用物理学関係連合講演会, 2009.03.
452. 陳雪江、中野智、劉立軍、柿本浩一, 一方向性凝固法におけるシリコンインゴット中点欠陥の数値評価, 2009年春季第56回応用物理学関係連合講演会, 2009.03.
453. 屋山 巴,寒川 義裕,柿本 浩一,纐纈明伯, 基板拘束を受けたInGaN薄膜の組成制御に関する理論検討, 2009年春季第56回応用物理学関係連合講演会, 2009.03.
454. 寒川義裕、長野利彦、江崎哲也、桑野範之、柿本浩一 , Li3Nを窒素源とする気相成長により作製したAlN/sapphireの微細組織観察, 2009年春季第56回応用物理学関係連合講演会, 2009.03.
455. 柿本浩一 , イントロダクトリートーク:(次世代結晶系太陽電池における革新的科学技術)
, 2009年春季第56回応用物理学関係連合講演会, 2009.03.
456. 柿本浩一,Chen X.J.,松尾 整,久松 翔,中野 智,寒川義裕, 太陽電池用シリコン結晶及びLSI用シリコン結晶成長のダイナミックシミュレーション, 2009年春季第56回応用物理学関係連合講演会, 2009.03.
457. Koichi Kakimoto, Hitoshi Matsuo, Syo Hisamatsu, Birava Ganesh, Gao Bing, X. J. Chen, Lijun Liu, Hiroaki Miyazawa, Yoshihiro Kangawa, Numerical analysis of Mc-Si crystal growth, 13th International Autumn Meeting - Gettering and Defect Engineering in Semiconductor Technology, GADEST 2009, 2009.01, [URL], The content and uniformity of impurities and precipitates have an important role in the efficiency of solar cells made of multicrystalline silicon. We developed a transient global model of heat and mass transfer for directional solidification for multicrystalline silicon and a dynamic model of SiC particles and silicon nitride precipitation in molten silicon based phase diagrams. Computations were carried out to clarify the distributions of carbon, nitrogen and oxygen based on segregation and the particle formation in molten silicon during a directional solidification process. It was shown that the content of SiC precipitated in solidified ingots increases as a function of the fraction solidified. It was also clarified from the results that Si2N 2O was first formed near the melt-crystal interface, since oxygen concentration in the melt decreases and nitrogen concentration in the melt increases with solidification of the molten silicon. Si3N4 was formed after Si2N2O had been formed..
458. 長野利彦,寒川義裕,柿本浩一 , Li3Nを窒素源とするAlNバルク成長における酸素混入の影響, 第38回結晶成長国内会議, 2008.11.
459. 柿本浩一 , 太陽電池用シリコン多結晶の凝固過程における不純物と欠陥の導入過程の解析, 第38回結晶成長国内会議, 2008.11.
460. 寒川義裕、秋山亨、伊藤智徳、白石賢二、柿本浩一, 立方晶GaNエピ成長における成長形の制御, 第38回結晶成長国内会議, 2008.11.
461. 中野 智, 劉 立軍, 陳 雪江, 松尾 整, 柿本 浩一, 数値解析を用いた多結晶シリコン育成時における融液内酸素濃度に対する坩堝回転数依存性の考察, 第38回結晶成長国内会議, 2008.11.
462. 久松翔,松尾整,中野智,寒川義裕,柿本浩一, 数値解析による太陽電池用多結晶Si中のSi2N2O析出領域の検討, 第38回結晶成長国内会議, 2008.11.
463. 松尾整、久松翔、寒川義裕、新船幸二、大下祥雄、山口真史、柿本浩一, 太陽電池用多結晶シリコン中の軽元素および析出物の分布に関する考察, 第38回結晶成長国内会議, 2008.11.
464. 陳 雪江、中野 智、劉 立軍、柿本 浩一, 多結晶シリコン育成過程におけるシリコンインゴット中転位の数値解析, 第38回結晶成長国内会議, 2008.11.
465. Hitoshi Matsuo, R. Bairava Ganesh, Satoshi Nakano Lijun Liu, Koji Arafune, Yoshio Ohshita, Masafumi Yamaguchi, Koichi Kakimoto, Effect of crucible rotation on oxygen concentration during solidification of multicrystalline silicon for solar cells, The 5th International Symposium on Advanced Science and Technology of Silicon Materials, 2008.11.
466. S. Nakano, L. J. Liu, X. J. Chen, H. Matsuo, K. Kakimoto, Effect of crucible rotation on oxygen concentration in the melt during crystallization of silicon for solar cells, The 5th International Symposium on Advanced Science and Technology of Silicon Materials, 2008.11.
467. Satoshi Nakano, Lijun Liu, Koichi Kakimoto, Numerical analysis of dislocations and residual stress in silicon ingot during a unidirectional solidification process, The 5th International Symposium on Advanced Science and Technology of Silicon Materials, 2008.11.
468. Sho Hisamatsu, Hitoshi Matsuo, Satoshi Nakano, Koichi Kakimoto, Numerical analysis of Si3N4 and Si2N2O distributions in multicrystalline silicon for solar cells, The 5th International Symposium on Advanced Science and Technology of Silicon Materials, 2008.11.
469. Koichi Kakimoto , Numerical analysis of local segregation and V/G in Si crystals: comparison with experiment, The 5th International Symposium on Advanced Science and Technology of Silicon Materials, 2008.11.
470. Yoshihiro Kangawa, Toshihiko Nagano, Koichi Kakimoto, Possibility of AlN vapor phase epitaxy using Li3N as a nitrogen source, International Workshop on Nitride Semiconductor, 2008.10.
471. Toshihiko Nagano, Yoshihiro Kangawa, Koichi Kakimoto, Influence of oxygen incorporation on AlN synthesis using Al and Li3N, International Workshop on Nitride Semiconductor, 2008.10.
472. 長野利彦,寒川義裕,柿本浩一, Li3NとAlを用いたAlN成長における酸素混入の影響, 2008年秋季第69回応用物理学会学術講演会, 2008.09.
473. 松尾 整,R. Bairava Ganesh,中野 智,劉 立軍,寒川 義裕,新船 幸二,大下 祥雄,山口 真史,柿本 浩一, 太陽電池用多結晶シリコン成長中の坩堝回転が酸素濃度分布に与える影響, 2008年秋季第69回応用物理学会学術講演会, 2008.09.
474. 陳 雪江,中野 智,劉 立軍,柿本浩一, 一方向性凝固法におけるシリコンインゴット中転位の数値評価, 2008年秋季第69回応用物理学会学術講演会, 2008.09.
475. 久松 翔,松尾 整,中野 智,劉 立軍,寒川 義裕,柿本 浩一 , 一方向性凝固法による多結晶Si育成過程におけるSi2N2O濃度分布解析, 2008年秋季第69回応用物理学会学術講演会, 2008.09.
476. 中野 智, 劉 立軍, 陳 雪江, 寒川 義裕, 柿本 浩一 , 太陽電池用多結晶シリコン成長における融液内酸素濃度の坩堝回転数依存性の数値解析, 2008年秋季第69回応用物理学会学術講演会, 2008.09.
477. Koichi Kakimoto, Time Dependent and/or 3D Investigation of Carbon, Nitrogen, and Dislocation Distributions in a Silicon Crystal During Solidification Process, 18th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, 2008.08.
478. Hitoshi Matsuo, R.Bairava Ganesh, Satoshi Nakano, Lijun Liu, Yoshihiro Kangawa, Koji Arafune, Yoshio Ohshita, Masafumi Yamaguchi, Koichi Kakimoto, Crucible rotation dependence of oxygen concentration during solidification of multicrystalline Si, The 21st Congress of the International Union of Crystallography, 2008.08.
479. X.Chen , Dislocation density in silicon ingot during a unidirectional solidification process, The 21st Congress of the International Union of Crystallography, 2008.08.
480. Yoshihiro Kangawa, Toru Akiyama, Tomonori Ito, Kenji Shiraishi, Koichi Kakimoto , Monte Carlo simulation of atomic arrangement in InGaN thin film grown by MOVPE
, 2nd International Symposium on Growth of III-Nitrides, 2008.07.
481. 寒川義裕、秋山亨、伊藤智徳、白石賢二、柿本浩一, Theoretical study of growth condition of cubic GaN, 第27回電子材料シンポジウム(EMS27), 2008.07.
482. Koichi KAKIMOTO, Modeling of crystal growth for solar cell, ICNPAA 2008: Mathematical Problems in Engineering, Aerospace and Sciences, 2008.06.
483. Xuejiang Chen, Satoshi Nakano, Lijun Liu and Koichi Kakimoto, Study on thermal stresses and dislocation in silicon ingot during a unidirectional solidification process, ICNPAA 2008: Mathematical Problems in Engineering, Aerospace and Sciences, 2008.06.
484. 松尾 整、R. Bairava Ganesh、中野 智、劉 立軍、寒川 義裕、 新船 幸二、大下 祥雄、山口 真史、柿本 浩一 , 一方向性凝固法による太陽電池用多結晶シリコンの酸素混入機構の解明
, ナノ学会第6回大会, 2008.05.
485. H. Matsuo, R. Bairava Ganesh, S. Nakano, L. Liu, Y. Kangawa, K. Arafune, Y. Ohshita, M. Yamaguchi, K. Kakimoto , Thermodynamical analysis of oxygen incorporation from a quartz crucible during solidification of multicrystalline silicon for solar cel, the 4th Asian Conference on Crystal Growth and Crystal Technology, 2008.05.
486. Y. Kangawa, K. Kakimoto, T. Ito, A. Koukitu, Theoretical approach to structural stability of GaN: How to grow cubic GaN, the 4th Asian Conference on Crystal Growth and Crystal Technology, 2008.05.
487. K. Kakimoto, L. J. Liu, S. Nakano, H. Miyazawa, H. Matsuo, B. Ganesh, H. Hisamatsu, X. J. Chen, Y. Kangawa, Simulation of Si casting , IWCGT-4, 2008.05.
488. 柿本浩一, 劉 立軍, Si-TMCZ法における固液界面成長速度と不純物分布の関係, 2008年春季第55回応用物理学会学術講演会, 2008.03.
489. 寒川義裕, 脇川達人, 長野利彦, 柿本浩一, Al とLi3N を原料とするサファイア基板上AlN 気相成長題, 2008年春季第55回応用物理学会学術講演会, 2008.03.
490. R. Bairava Ganesh, 松尾 整, 中野 智, 劉 立軍, 寒川義裕, 新船幸二, 大下祥雄, 山口真史 , 柿本浩一, ACRTを用いた太陽電池用多結晶シリコン中の炭素濃度の制御, 2008年春季第55回応用物理学会学術講演会, 2008.03.
491. 柿本浩一,  劉 立軍,  松尾 整,  B.Ganesh,  宮澤宏章,  中野 智,  陳 雪江,  久松 翔,  寒川義裕, 高効率太陽電池結晶成長プロセスのグローバル解析と実験的アプローチ, 化学工学会熱工学部会2007年度講演会「材料プロセスと熱工学」, 2008.02.
492. Koichi Kakomoto, Numerical and experimental investigation of impurity distribution polycrystals for solar cells, 2nd International Workshop on Science and Technology of Crystalline Si Solar Cells (CSSC), 2007.12.
493. 脇川達人、長野利彦、寒川義裕、柿本浩一, Li3Nを窒素源とするAlN成長における相安定性の解析, 2007年応用物理学会結晶工学分科会年末講演会, 2007.12.
494. 寒川義裕、脇川達人、長野利彦、柿本浩一, Li3Nを窒素源とするAlN溶液成長, 第37回結晶成長国内会議,, 2007.11.
495. R. Bairava Ganesh, Hitoshi Matsuo, Takahiro Kawamura, Yoshihiro Kangawa, , Koji Arafune, Yoshio Ohshita, Masafumi Yamaguchi, Koichi Kakimoto, 導入した成長縞による一方向性凝固シリコン多結晶の成長速度の推定, 第37回結晶成長国内会議,, 2007.11.
496. 河村貴宏、寒川義裕、柿本浩一, SiCにおける結晶構造の不規則性が熱伝導率に及ぼす影響第, 第37回結晶成長国内会議,, 2007.11.
497. Hitoshi Matsuo, R. Bairava Ganesh, Satoshi Nakano, Lijun Liu, Yuriko Matsuo, Yoshihiro Kangawa, Koji Arafune, Yoshio Ohshita, Masafumi Yamaguchi, Koichi Kakimoto , Analysis of oxygen incorporation processin unidirectionally solidified multicrystalline silicon for solar cells, シリコン材料の科学と技術フォーラム2007, 2007.11.
498. K. Kakimoto, L. Liu & S. Nakano, Global Modeling of a Directional Solidification Process for Multi-Crystalline Silicon, 22nd European Photovoltaic Solar Energy Conference and Exhibition, 2007.09.
499. 柿本浩一、寒川義裕、劉立軍、川村史朗、森勇介、佐々木孝友, GaN 溶液成長における熱対流と成長速度の関係, 2007年秋季第68回応用物理学会学術講演会, 2007.09.
500. 河村貴宏、寒川義裕、柿本浩一, SiCの熱伝導率に対する積層欠陥の影響, 2007年秋季第68回応用物理学会学術講演会, 2007.09.
501. 松尾 整,R. Bairava Ganesh, 中野 智, 劉 立軍, 寒川 義裕,新船 幸二,大下 祥雄,山口 真史, 柿本 浩一 , 一方向性凝固法による多結晶シリコンの酸素混入過程の解析, 2007年秋季第68回応用物理学会学術講演会, 2007.09.
502. 宮澤 宏章,劉 立軍,柿本 浩一, 一方向性凝固法による太陽電池用Si多結晶育成過程の3Dグローバル解析, 2007年秋季第68回応用物理学会学術講演会, 2007.09.
503. 宮澤 宏章,劉 立軍,柿本 浩一, 一方向性凝固法による太陽電池用Si多結晶育成過程における傾斜の影響の数値解析, 2007年秋季第68回応用物理学会学術講演会, 2007.09.
504. Daisuke Kashiwagi, Ryohei Gejo, Yoshihiro Kangawa, Lijun Liu, Fumio Kawamura, Yusuke Mori, Takatomo Sasaki, Koichi Kakimoto, Global analysis of GaN growth using a solution technique, 15th International Conference on Crystal Growth, 2007.08.
505. Takahiro Kawamura, Daisuke Hori, Yoshihiro Kangawa, Koichi Kakimoto, On thermal conductivity of 2H-, 3C-, 4H- and 6H-SiC calculated by molecular dynamics, 15th International Conference on Crystal Growth, 2007.08.
506. Lijun Liu, Satoshi Nakano, Koichi Kakimoto, Carbon concentration and particle precipitation during a directional solidification of multi-crystalline silicon, 15th International Conference on Crystal Growth, 2007.08.
507. Xuejiang Chen Lijun Liu, Hiroshige Tezuka,Yoshiyuki Usuki, Koichi Kakimoto, Numerical simulation of heat transfer in an inductively heated SiC growth system using a global model, 15th International Conference on Crystal Growth, 2007.08.
508. Hitoshi Matsuo, R.Bairava Ganesh, Lijun Liu, Yoshihiro Kangawa, Koji Arafune, Yoshio Ohshita, Masafumi Yamaguch, Koichi Kakimoto, Analysis of oxygen and carbon concentration in multicrystalline Si for soler cell, 15th International Conference on Crystal Growth, 2007.08.
509. Takahiro Kawamura, Yoshihiro Kangawa, Koichi Kakimoto, Investigation of thermal conductivity of fullerene peapod by molecular dynamics, 15th International Conference on Crystal Growth, 2007.08.
510. 宮澤 宏章,劉 立軍,柿本 浩一, 一方向性凝固法によるSi多結晶育成過程における傾斜の影響の数値解析, 第26回電子材料シンポジウム, 2007.07.
511. 脇川達人, 寒川義裕, 柿本浩一, AlとLi3Nを用いた常圧AlN溶液成長, 第26回電子材料シンポジウム, 2007.07.
512. Koichi Kakimoto, Numerical investigation of crystal growth process of bulk Si, SiC and nitrides, ICSSC-5 & PCCG-8, 2007.05.
513. 佐藤幸治,後藤輝孝,金田寛,根本祐一,昆金正敏,柿本浩一,中村慎太郎, 超音波によるシリコン結晶中の原子空孔濃度分布の研究, 日本物理学会 2007年春季大会, 2007.03.
514. 金田寛,後藤輝孝,佐藤幸治,昆金正敏,根本祐一,鶴田健二,家富洋,柿本浩一,中村慎太郎, 超音波による点欠陥制御育成CZシリコン結晶の原子空孔濃度分布測定, 日本物理学会 2007年春季大会, 2007.03.
515. 後藤輝孝,金田寛,佐藤幸治,昆金正敏,根本祐一,鶴田健二,家富洋,柿本浩一,中村慎太郎, 超音波によるシリコン結晶中の原子空孔の観測と電気四極子, 日本物理学会 2007年春季大会, 2007.03.
516. 寒川義裕、柿本浩一, Li3N を用いた常圧AlN 溶液成長の可能性, 2007年春季第54回応用物理学会学術講演会, 2007.03.
517. 柏木大輔,下條亮平,寒川義裕,劉立軍,川村史朗,森勇介,佐々木孝友,柿本浩一, GaN 溶液成長における熱対流と窒素輸送の数値流動解析, 2007年春季第54回応用物理学会学術講演会, 2007.03.
518. 勝谷匡博,脇川達人,寒川義裕,王萍,福山敦彦,明石義人,碇哲雄,柿本浩一, Si/Ge/Si(001)界面形状とフォノン伝播の関係, 2007年春季第54回応用物理学会学術講演会, 2007.03.
519. 劉立軍、宮澤宏章、中野智、柿本浩一, 一方向性凝固における坩堝傾斜の固液界面形状と融液対流に及ぼす影響, 2007年春季第54回応用物理学会学術講演会, 2007.03.
520. 柿本浩一,劉 立軍, 水平磁場印加CZ-Si結晶育成時の酸素濃度分布のグローバル解析, 2007年春季第54回応用物理学会学術講演会, 2007.03.
521. 中野 智,劉 立軍,宮澤宏章,柿本浩一 , マルチヒーターを使用した一方向性凝固法におけるシリコン多結晶育成時の融液対流及び炉の大きさの固液界面形状に及ぼす影響, 2007年春季第54回応用物理学会学術講演会, 2007.03.
522. 堀 大輔,河村貴宏,寒川義裕,柿本浩一, 分子動力学法を用いたSiCの熱伝導率解析, 2007年春季第54回応用物理学会学術講演会, 2007.03.
523. 陳 雪江,劉 立軍,手塚宏茂,薄 善行,柿本浩一, SiC結晶成長における炉内温度分布の数値解析, 2007年春季第54回応用物理学会学術講演会, 2007.03.
524. 松尾 整,河村貴宏,Bairava Ganesh R.,寒川義裕,新船幸二,大下祥雄,山口真史,柿本浩一, 一方向凝固多結晶シリコン内の応力分布解析, 2007年春季第54回応用物理学会学術講演会, 2007.03.
525. 河村貴宏,寒川義裕,柿本浩一, 分子動力学法によるC60ピーポッドの熱伝導率解析, 2007年春季第54回応用物理学会学術講演会, 2007.03.
526. 柿本浩一,劉 立軍,中野 智,宮澤宏章,寒川義裕, 企画の意図、太陽電池用Siバルク結晶成長解析と学振145委員会トピックス, 2007年春季第54回応用物理学会学術講演会, 2007.03.
527. 木下綾,野元恵太, 吉野賢二, 碇哲雄, 松尾整, 柿本浩一, 瀬戸悟, AgGaSe2バルク結晶のフォトルミネッセンスによる評価トピックス, 2007年春季第54回応用物理学会学術講演会, 2007.03.
528. 劉立軍、中野智、寒川義裕、柿本浩一, 一方向性凝固三次元シミュレータの開発, 太陽電池用SiとLSI用Siの結晶成長と結晶評価講演会, 2006.12.
529. 金田 寛,後藤 輝孝,佐藤 幸治,根本 裕一,斉藤 康裕,柿本 浩一,中村 慎太郎, 低温超音波計測による引上げ速度変化CZシリコン結晶中の原子空孔濃度分布の計測, 太陽電池用SiとLSI用Siの結晶成長と結晶評価講演会, 2006.12.
530. 寒川義裕、松尾有里子、秋山亨、伊藤智徳、白石賢二、柿本浩一, GaN/GaN(001)における成長初期過程の理論検討, 第36回結晶成長国内会議, 2006.11.
531. 劉立軍、米田大悟、高橋奈菜子、中野智、陳雪江、柿本浩一, Three-dimensional global analysis of heat transfer in a unidirectional solidification process for silicon solar cells, 第36回結晶成長国内会議, 2006.11.
532. 中野智、劉立軍、柿本浩一, Dynamic analysis of temperature distribution in multi-crystalline silicon of a casting method with moving heater system, 第36回結晶成長国内会議, 2006.11.
533. 河村貴宏,寒川義裕,柿本浩一, GaN/AlN量子ドットの熱伝導率解析, 第36回結晶成長国内会議, 2006.11.
534. 河村貴宏,寒川義裕,柿本浩一, 単層及び多層カーボンナノチューブの熱伝導率解析, 第36回結晶成長国内会議, 2006.11.
535. 松尾整,河村貴宏,寒川義裕,柿本浩一, 新船幸二,大下祥雄,山口真史, 一方向凝固多結晶シリコンのラマン散乱による応力解析, 第36回結晶成長国内会議, 2006.11.
536. 柏木大輔,劉立軍,寒川義裕,柿本浩一, LPE成長法によるGaN単結晶成長過程の数値流動解析, 平成18年度 応用物理学会九州支部学術講演会, 2006.11.
537. 勝谷匡博,脇川達人,寒川義裕,福山敦彦,明石義人,碇哲雄,柿本浩一, Si/Ge/Si(001)界面形状と熱物性の関係, 平成18年度 応用物理学会九州支部学術講演会, 2006.11.
538. 堀大輔, 河村貴宏,寒川義裕,柿本浩一, 分子動力学法によるSiCの熱伝導率解析, 平成18年度 応用物理学会九州支部学術講演会, 2006.11.
539. LJ Liu, XJ Chen, S Nakano, N Takahashi, K Kakimoto, Investigation of a unidirectional solidification process for Si crystals with a transient global model, International Workshop on Science and Technology of Crystalline Si Solar Cells, 2006.10.
540. 河村貴宏,寒川義裕,柿本浩一, 分子動力学法による機能性材料の熱伝導率解析, 第27回熱物性シンポジウム, 2006.10.
541. T. Kawmaura, Y. Kangawa, K. Kakimoto, Molecular dynamics simulation of thermal conductivity of GaN/AlN quantum dot superlattice, IWN2006, 2006.10.
542. Y. Kangawa, K. Kakimoto, T. Ito, A. Koukitu, Numerical study of relationship between growth condition and atomic arrangement of InGaN, IWN2006, 2006.10.
543. Koichi Kakimoto and Lijun Liu, 3D Numerical Analysis of Silicon Crystal Growth, AFI-2006, 2006.10.
544. Y . Kangawa, Y. Matsuo, T. Akiyama, T. Ito, K. Shiraishi and K. Kakimoto, Ab initio based approach on initial growth kinetics of GaN on GaN(001),, MBE2006, 2006.09.
545. H. Matsuo, T. Kawamura, K. Kakimoto, Advantage of stress analysis by second order Raman scattering from multi-silicon crystals, International Workshop on Sustainable Energy and Materials, 2006.09.
546. LJ Liu, S Nakano, D Yoneda,K Kakimoto, Dynamic simulation of casting processes with a global model, The 5th International Workshop on Modeling in Crystal Growth, 2006.09.
547. 佐藤幸治、後藤輝孝、金田寛、齋藤康裕、根本祐一、柿本浩一、中村慎太郎, シリコン結晶中の原子空孔に起因した弾性定数ソフト化, 日本物理学会2006年秋季大会, 2006.09.
548. 木下 綾,野元恵太,吉野賢二,碇 哲雄,松尾 整,柿本浩一,瀬戸 悟, ホットプレス法によるAgGaSe2バルク結晶の成長, 2006年秋季 第67回応用物理学会学術講演会, 2006.08.
549. 棚橋克人,金田 寛,柿本浩一,須藤彰三, 赤外レーザ照射によるシリコン中のボロンとリンの増速拡散, 2006年秋季 第67回応用物理学会学術講演会, 2006.08.
550. 後藤輝孝,金田 寛,佐藤幸治,齋藤康裕,根本祐一,昆金正敏,柿本浩一,中村慎太郎, 超音波によるFZシリコン結晶中原子空孔の電荷状態の観測, 2006年秋季 第67回応用物理学会学術講演会, 2006.08.
551. 金田 寛,後藤輝孝,佐藤幸治,斎藤康裕,根本裕一,柿本浩一,中村慎太郎, 極低温超音波計測による点欠陥制御CZシリコン結晶中の原子空孔濃度分布観測, 2006年秋季 第67回応用物理学会学術講演会, 2006.08.
552. 寒川義裕,柿本浩一,伊藤智徳,纐纈明伯, InGaN中に形成される微細組織の理論検討, 2006年秋季 第67回応用物理学会学術講演会, 2006.08.
553. 劉立軍、柿本浩一, Three-dimensional global analysis of heat transfer in a unidirectional solidification process of silicon, 2006年秋季 第67回応用物理学会学術講演会, 2006.08.
554. 松尾 有里子,寒川 義裕,富樫 理恵,柿本 浩一,, GaNバッファ層成長におけるSi(111)基板表面の水素被覆率の影響, 2006年秋季 第67回応用物理学会学術講演会, 2006.08.
555. 河村貴宏,寒川義裕,柿本浩一, 分子動力学法によるGaN/AlN量子ドットの熱伝導率解析, 2006年秋季 第67回応用物理学会学術講演会, 2006.08.
556. 河村貴宏,寒川義裕,柿本浩一, 分子動力学法によるカーボンナノチューブの熱伝導率解析, 2006年秋季 第67回応用物理学会学術講演会, 2006.08.
557. LJ Liu, S Nakano, K Kakimoto, Investigation of heat and mass transfer in electromagnetic melt of silicon of a CZ process with a 3D global model, The 7th World Congress on Computational Mechanics, 2006.07.
558. Koichi Kakimoto, An Investigation of Temperature and Impurities Distributions In a Solidified Si Ingot By Unidirectional Solidification Method By Using a Dynamic Global Model, 16th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, 2006.07.
559. Terutaka Goto, Hiroshi Kaneda-Yamada, Yasuhiro Saito, Yuichii Nemoto, Koji Satho, Koichi Kakimoto, Shintaro Nakamura, Direct observation of vacancy in silicon by sub-Kelvin ultrasonic measurements, E-MRS IUMRS ICEM 2006 Spring Meeting, 2006.06.
560. Koichi Kakimoto, Lijun Liu and Satoshi Nakano, Dynamic simulation of temperature iron and carbon distributions in a unidirectional solidification process for crystalline silicon solar cells with a global model, E-MRS IUMRS ICEM 2006 Spring Meeting, 2006.06.
561. H. Yamada-Kaneta, T. Goto, Y. Saito, Y. Nemoto, K. Sato, K. Kakimoto, S. Nakamura, Vacancies in defect-free-zone of point-defect-controlled CZ silicon observed by low-temperature ultrasonic measurement, E-MRS IUMRS ICEM 2006 Spring Meeting, 2006.06.
562. Y. Kangawa, Y. Matsuo, T. Akiyama, T. Ito, K. Shiraishi and K. Kakimoto, Theoretical Approach on Initial Growth Kinetics of GaN on GaN(001), ISGN-1, 2006.06.
563. Yuriko Matsuo, Yoshihiro Kangawa, Rie Togashi, Koichi Kakimoto, Akinori Koukitu, Influence of hydrogen coverage on Si(111) substrate on the growth of GaN buffer layer, ISGN-1, 2006.06.
564. Y. Kangawa, K. Kakimoto, T. Ito and A. Koukitu, Analysis of compositional instability of InGaN by Monte Carlo simulation, ICMOVPE-13, 2006.05.
565. T. Kawmaura, Y. Kangawa, K. Kakimoto, An investigation of thermal conductivity of nitride-semiconductor nanostructures by molecular dynamics simulation, ICMOVPE-13, 2006.05.
566. Koichi Kakimoto, Lijun Liu and Satoshi Nakano, Analysis of temperature and impurity distributions in a unidirectional-solidification process for multi-crystalline silicon of solar cells by a global model, E-MRS IUMRS ICEM 2006 Spring Meeting, 2006.05.
567. 寒川義裕,秋山 亨,伊藤智徳,白石賢二,柿本浩一, GaN(001)成長初期過程の原子レベル解析, 2006年(平成18年)春季第53回応用物理学関係連合講演会, 2006.03.
568. Y.Yano, H.Matsuo, K.Yoshino,T.Ikari and Koichi Kakimoto, VGF-Growth Mechanism of Chalocopyrite Semiconductors by SIMPLE Solution, ICTMC-15, 2006.03.
569. 劉 立軍,中野 智,柿本浩一, キャスティングプロセスの総合伝熱解析によるシリコンインゴット中の炭素分布の解析, 2006年(平成18年)春季第53回応用物理学関係連合講演会, 2006.03.
570. 柿本浩一,劉 立軍,中野 智,寒川義裕, ダイナミックグローバルモデルによるキャストプロセス解析, 2006年(平成18年)春季第53回応用物理学関係連合講演会, 2006.03.
571. 河村貴宏,寒川義裕,柿本浩一, ナノ構造を有する窒化物半導体の熱伝導率解析, 2006年(平成18年)春季第53回応用物理学関係連合講演会, 2006.03.
572. 中野 智,劉 立軍,柿本浩一, マルチヒーターを使用した一方向性凝固法によるシリコン多結晶の熱流動解析, 2006年(平成18年)春季第53回応用物理学関係連合講演会, 2006.03.
573. 金田 寛,後藤輝孝,斎藤康裕,根本裕一,佐藤幸治,柿本浩一,中村慎太郎, 極低温超音波計測によるCZシリコン結晶中の原子空孔の観測, 2006年(平成18年)春季第53回応用物理学関係連合講演会, 2006.03.
574. 後藤輝孝,金田 寛,齋藤康裕,根本祐一,佐藤幸治,柿本浩一,中村慎太郎, 極低温超音波計測によるFZシリコン結晶中の原子空孔の観測, 2006年(平成18年)春季第53回応用物理学関係連合講演会, 2006.03.
575. 齋藤康裕,後藤輝孝,根本祐一,佐藤幸治,金田寛,柿本浩一, 超音波によるシリコン単結晶中原子空孔の電荷状態の研究, 第61回年次大会,日本物理学会, 2006.03.
576. 金田寛,後藤輝孝,齋藤康裕,根本祐一,佐藤幸治,柿本浩一, 超音波計測によるデバイス用シリコン結晶の原子空孔の直接観測, 第61回年次大会,日本物理学会, 2006.03.
577. 後藤輝孝,金田寛,齋藤康裕,根本祐一,佐藤幸治,柿本浩一,中村慎太郎, 低温超音波計測によるシリコン結晶での原子空孔のヤーンテラー効果の観測, 第61回年次大会,日本物理学会, 2006.03.
578. 金田 寛、棚橋克人、柿本浩一、須藤彰三, 赤外レーザ照射によるシリコン中の酸素とドーパントの増速拡散, 応用物理学会 シリコンテクノロジー分科会 「シリコン結晶に関する基礎研究と応用技術−若手研究者を中心とした討論会−」, 2006.02.
579. H. Yamada-Kaneta, K. Tanahashi, and K. Kakimoto, Enhanced diffusion of boron and oxygen in silicon by laser irradiation, ALC’05, 2005.12.
580. Lijun Liu, Satoshi Nakano, Koichi Kakimoto, Numerical analysis of an electromagnetic CZ-SI growth process by 3D global modeling, 2005 ASME Summer Heat Transfer Conference, HT 2005, 2005.12, [URL], Three-dimensional (3D) thermal flow of silicon melt in an electromagnetic Czochralski (CZ) system was numerically investigated with a recently developed 3D global model. The electromagnetic CZ system was established with a transverse magnetic field and an injected electric current applied on the melt surface. Different azimuthal and radial positions of the electrode on the melt surface were taken into account to investigate their influences on the heat and mass transfer in the melt, as well as on the melt-crystal interface. The influence of the electric current direction on the melt flow pattern and temperature distribution was also demonstrated. The results showed that the position of the electrode on the melt surface and the direction of the applied electric current play an important role in controlling the heat and mass transfer in the silicon melt..
581. 柿本 浩一,劉 立軍,中野 智, グローバルモデルによる太陽電池用キャストプロセスの解析, 第50回人工結晶討論会, 2005.11.
582. Koichi Kakimoto, Lijun Liu and Satoshi Nakano, Modeling CZ Crystal Growth and Casting Process for Solar Cells, CGCT-3, 2005.10.
583. 河村貴宏,寒川義裕,柿本浩一, AlN/GaN超格子の熱伝導率解析, 2005年秋季第66回応用物理学会学術講演会, 2005.09.
584. Koichi Kakimoto and Lijun Liu, Global Analysis of Effects of Magnetic Field Configuration on Melt-Crystal Interface Shape and Melt Flow in a CZ –Si Crystal Growth, IWCGT-3, 2005.09.
585. Yoshihiro KANGAWA1, Koichi KAKIMOTO, Tomonori ITO2 and Akinori KOUKITU, Thermodynamic stability of In1-x-yGaxAlyN on GaN and InN, 2005年6th International Conference on Nitride Semiconductors, 2005.09.
586. 寒川義裕、柿本浩一, モンテカルロ法によるInGaN組成不安定性の理論検討, 2005年秋季第66回応用物理学会学術講演会, 2005.09.
587. 河村貴宏,寒川義裕,柿本浩一, 格子欠陥を考慮したGaNの熱伝導率解析, 2005年秋季第66回応用物理学会学術講演会, 2005.09.
588. 柿本 浩一,劉 立軍,米田 大悟,桜場 茂圭,中野 智,寒川 義裕, 太陽電池用グローバルシミュレーションによる固液界面形状・不純物解析, 東北大学金属材料研究所ワークショップ, 2005.09.
589. Koichi KAKIMOTO, An investigation of thermal conductivity of isotope Si and III-Ns by molecular dynamics, 6th International Workshop on Future Information Processing Technologies (IWFIPT) - AgendaIWCGT-4, 2005.08.
590. 寒川 義弘,柿本 浩一, InGaN組成不安定性のモンテカルロ法による解析, 第35回結晶成長国内会議(NCCG-35), 2005.08.
591. 柿本 浩一,劉 立軍,棚橋 克人,金田 寛, レーザー照射によるシリコン中の酸素とボロンの拡散促進, 第35回結晶成長国内会議(NCCG-35), 2005.08.
592. 寒川 義弘,柿本 浩一, 分子動力法によるAIN/GaN超格子の熱伝導率解析, 第35回結晶成長国内会議(NCCG-35), 2005.08.
593. 寒川 義弘,柿本 浩一, 分子動力法による格子欠陥を考慮したGaNの熱伝導率解析, 第35回結晶成長国内会議(NCCG-35), 2005.08.
594. Takahiro Kawamura, Ysihiro Kangawa, Lijun Liu, Satoshi Nakano, Koichi. Kakimoto, An Investigation of Thermal Conductivity of Ga1-XAIXN and Ga1-XInXN by Molecular Dynamics, ACCGE16, 2005.07.
595. Takahiro Kawamura, Yoshihiro Kangawa and Koichi Kakimoto, Analysis of thermal conductivity of nitride alloy by molecular dynamics, 2005年EMS, 2005.07.
596. 劉 立軍,中野 智,柿本 浩一, EMCZ印加下におけるシリコン融液中の酸素輸送の三次元総合解析, 第35回結晶成長国内会議(NCCG−35), 2005.07.
597. Yoshihiro KANGAWA, Koichi KAKIMOTO, Tomonori ITO and Akinori KOUKITU, Influence of lattice constraint from substrate on compositional instability of InAlGaN thin film, 2005年EMS, 2005.07.
598. Koichi KAKIMOTO, Modeling CZ Crystal Growth and Casting Process for Solar Cells, NREL, 2005.07.
599. Lijun Liu, Satoshi Nakano, Koichi Kakimoto, Numerical prediction of Iron During a Casting Process by Global Simulation, ACCGE16, 2005.07.
600. Lijun Liu, Satoshi Nakano, Koichi Kakimoto, Transient Analysis of Temperature Distribution of Silicon During a Casting Process, ACCGE16, 2005.07.
601. 劉 立軍,中野 智,柿本 浩一, シリコン太陽電池成長のためのキャスティングプロセスの総合電熱解析, 第35回結晶成長国内会議(NCCG-35), 2005.07.
602. 柿本 浩一, Si結晶成長と点欠陥, ISSPワークショップ「ラットリングと超伝導」, 2005.05.
603. 柿本 浩一, 「フレッシュマンのための基礎からの結晶成長講習会3−流れのダイナミクスと結晶成長」, 第11回結晶成長講習会, 2005.05.
604. 柿本 浩一, 二重るつぼ法における融液挙動, 第91回結晶成長/光デバイス材料研究会, 2005.04.
605. 劉 立軍,柿本 浩一, 三次元総合モデリングによるEMCZにおけるシリコン融液中の伝熱および酸素輸送の解析, 第52回応用物理学関係連合講演会, 2005.03.
606. 劉 立軍,村川 淳,柿本 浩一, 総合伝熱モデルによる高濃度不純物添加シリコン結晶中の温度分布解析, 第52回応用物理学関係連合講演会, 2005.03.
607. 河村 貴宏,寒川 義裕,柿本 浩一, 分子動力学法によるGaN及び窒化物混晶の熱伝導率解析, 第52回応用物理学関係連合講演会, 2005.03.
608. Lijun Liu, Koichi Kakimoto, Three-dimensional global modeling of a CZ-Si crystal growth in a transverse magnetic field, 日本結晶成長学会バルク成長分科会第64回研究会「バルク結晶成長の新展開」, 2005.02.
609. Koichi Kakimoto, A. Murakawa, Y. Hashimoto, An investigation of thermal conductivity of isotope silicon as a function of temperature estimated by molecular dynamics, 2005.02, [URL], We investigated the effect of isotope concentration on thermal conductivity of silicon as a function of temperature by using equilibrium molecular dynamics simulation. It was found that thermal conductivity of silicon crystals was increased by purification of isotopes of a temperature near room temperature. At a temperature around 1000 K, the degradation of thermal conductivity based on the thermal effect became more dominant than that based on the isotope effect. Therefore, the discrepancy in thermal conductivities of silicon crystals with different isotope concentrations decreased..
610. Atsushi Murakawa, Hideo Ishii, Koichi Kakimoto, An investigation of thermal conductivity of silicon as a function of isotope concentration by molecular dynamics, JSPS Si Symposium, 2004.11.
611. 劉 立軍,柿本 浩一, CZSi結晶成長における3次元総合伝熱解析モデルの構築, 熱工学コンファレンス, 2004.11.
612. Lijun Liu, Koichi Kakimoto, Three-Dimensional Global Modeling of a CZ-Si Growth Furnace in a Transverse Magnetic Field, JSPS Si Symposium, 2004.11.
613. 柿本 浩一, シリコン及び窒化物結晶のサーマルマネージメント, 第49回人工結晶討論会, 2004.11.
614. 河村 貴宏,  柿本 浩一, 分子動力学法による窒化物固溶体の熱伝導率解析, 2004年日本航空宇宙学会西部支部講演会, 2004.10.
615. 劉 立軍,北嶋 具教,柿本 浩一, TMCZ印加下におけるSi結晶成長速度の固液界面形状に及ぼす影響の総合解析, 第65回応用物理学会学術講演会, 2004.09.
616. 北嶋 具教,劉 立軍,北村 健二,柿本 浩一, 結晶回転にACRTを用いたLiNbO3結晶成長の融液対流解析, 第65回応用物理学会学術講演会, 2004.09.
617. 河村 貴宏,柿本 浩一, 分子動力学法による窒化物固溶体の熱伝導率解析, 第65回応用物理学会学術講演会, 2004.09.
618. Lijun Liu and Koichi Kakimoto, 3D Global Analysis of CZ-Si Crystal Growth in a Transverse Magnetic Field Under Condition of Varying Crystal Growth Rates, ICCG-14, ICVGE-12, 2004.08.
619. Koichi Kakimoto, Atsushi Murakawa and Yoshio Hashimoto, An Investigation of Thermal Conductivity of Isotope Silicon and Germanium by Molecular Dynamics, ICCG-14, ICVGE-12, 2004.08.
620. Lijun Liu, Tomonori Kitashima and Koichi Kakimoto, Analysis of Effects of Magnetic Field Configuration on Melt-Crystal Interface Shape and Melt Flow in CZ-Si Crystal Growth by Global Simulation, ICCG-14, ICVGE-12, 2004.08.
621. Koichi Kakimoto, Convection of semiconductor during crystal growth, ISSCG-12, 2004.08.
622. Tomonori Kitashima, Lijun Liu, Kenji Kitamura and Koichi Kakimoto, Effects of the ACRT in the double-crucible Czochralski process on the shape of the elt-crystal interface, ICCG-14, ICVGE-12, 2004.08.
623. Takahiro Kawamura1, Yoshihiro Kangawa and Koichi Kakimoto, Investigation of thermal conductivity of nitride mixed crystal by molecular dynamics, 2005年6th International Conference on Nitride Semiconductors, 2004.08.
624. 河村貴宏,柿本浩一, 分子動力学法によるGaNの熱伝導率解析, 2004年第34回結晶成長国内会議, 2004.08.
625. Takahiro Kawamura, Atsushi Murakawa, Yoshio Hashimoto and Koichi Kakimoto, Thermal Conductivity of GaN investigated by Molecular Dynamics, ICCG-14, ICVGE-12, 2004.06.
626. Koichi Kakimoto and Lijun Liu, 結晶成長における3次元総合伝熱解析モデルの構築, 第16回「電磁力関連のダイナミクス」シンポジウム, 2004.06.
627. Lijun Liu and Koichi Kakimoto, 3D global analysis of CZ-SI crystal growth in a transverse magnetic field with rotating rucible and crystal, 4th International Conference on Solid State Crystals, 2004.05.
628. Koichi Kakimoto, Lijun Liu, Atsushi Murakawa and Yoshio Hashimoto, Silicon crystal growth from the melt-analysis from atomic and macro scales 4th International Conference on Solid State Crystals, 4th International Conference on Solid State Crystals, 2004.05.
629. Tomonori Kitashima, Lijun Liu, Kenji Kitamura, Koichi Kakimoto, Numerical analysis of continuous charge of lithium niobate in a double-crucible Czochralski system using the accelerated crucible rotation technique, Proceedings of the Fourth International Workshop on Modeling, 2004.05, [URL], The transport mechanism of supplied raw material in a double-crucible Czochralski system using the accelerated crucible rotation technique (ACRT) was investigated by three-dimensional and time-dependent numerical simulation. The calculation clarified that use of the ACRT resulted in enhancement of the mixing effect of the supplied raw material. It is, therefore, possible to maintain the composition of the melt in an inner crucible during crystal growth by using the ACRT. The effect of the continuous charge of the raw material on melt temperature was also investigated. Our results showed that the effect of feeding lithium niobate granules on melt temperature was small, since the feeding rate of the granules is small. Therefore, solidification of the melt surface due to the heat of fusion in this system is not likely..
630. 河村貴宏,柿本浩一,橋本良夫, 分子動力学法によるGaNの熱伝導率解析, 2004年春季第51回応用物理学会学術講演会, 2004.03.
631. 柿本 浩一,村川 淳,石井 秀夫, 分子動力学法によるシリコンとゲルマニウムの同位体半導体の熱伝導解析とその応用, 応用物理学会シリコンテクノロジー分科会, 2004.02.
632. 柿本 浩一,土橋 健太郎,橋本 良夫, 分子動力学法による過冷却メルトの構造と物性, 第53回理論応用力学講演会, 2004.01.
633. Lijun Liu, Koichi Kakimoto, Numerical study of the effect of magnetic fields on melt-crystal interface-deflection in Czochralski crystal growth, 2003 ASME Summer Heat Transfer Conference (HT2003), 2003.12, In order to control the impurity distribution and remove defects in a crystal grown in Czochralski growth for high quality crystals of silicon, it is necessary to study and control the melt-crystal interface shape, which plays an important role in control of the crystal quality. The melt-crystal interface interacts with and is determined by the convective thermal flow of the melt in the crucible. Application of magnetic field in the Czochralski system is an effective tool to control the convective thermal flow in the crucible. Therefore, the shape of the melt-crystal interface can be modified accordingly. Numerical study is performed in this paper to understand the effect of magnetic field on the interface deflection in Czochralski system. Comparisons have been carried out by computations for four arrangements of the magnetic field: without magnetic field, a vertical magnetic field and two types of cusp-shaped magnetic field. The velocity, pressure, thermal and electromagnetic fields are solved with adaptation of the mesh to the iteratively modified interface shape. The multi-block technique is applied to discretize the melt field in the crucible and the solid field of silicon crystal. The unknown shape of the melt-crystal interface is achieved by an iterative procedure. The computation results show that the magnetic fields have obvious effects on both the pattern and strength of the convective flow and the interface shape. Applying magnetic field in the Czochralski system, therefore, is an effective tool to control the quality of bulk crystal in Czochralski growth process..
634. Koichi Kakimoto, Atsushi Murakawa, Hideo Ishi, Temperature dependence of Thermal Conductivity of Isotope Silicon investigated by Molecular Dynamics, Proceedings of the Forum on the Science and Technology of Silicon Materials 2003, 2003.11.
635. 柿本 浩一,篠崎 高茂,橋本 良夫, 水平磁場印加電磁攪 によるシリコン結晶育成時の融液流動解析, 第16回計算力学講演会, 2003.11.
636. 劉立軍、柿本浩一, CZ-Si結晶成長における種子-成長結晶界面近傍の不純物濃度分布形成機構の数値解析, 第64回応用物理学会学術講演会, 2003.08.
637. 柿本浩一、村川淳、石井秀夫、劉立軍、篠崎高茂, シリコン結晶製造プロセスのナノ、ミクロ、マクロスケール数値計算, Mechanical Engineering Congress, 2003 Japan (MEJC-03), 2003.08.
638. 劉立軍、柿本浩一, 磁場印加におけるCZ-Si結晶成長の固面界面形状と融液対流の数値解析, 第64回応用物理学会学術講演会講演予稿集, 2003.08.
639. 柿本浩一、田代昭正、篠崎高茂, 水平磁場印加EMCZ法におけるシリコン融液と酸素の移動メカニズム, 第64回応用物理学会学術講演会講演予稿集, 2003.08.
640. 石井秀夫、村川淳、柿本浩一, 分子動力学法による同位体ゲルマニウムの熱伝導度解析, 第64回応用物理学会学術講演会講演予稿集, 2003.08.
641. Koichi Kakimoto, An investigation of thermal conductivity of silicon as a function of isotope
concentration by molecular dynamics, 15th American Conference on Crystal Growth and Epitaxy, 2003.07.
642. Tomonori Kitashima, Koichi Kakimoto, Numerical analysis of the transport mechanism of continuous charge and double crucible method using ACRT, 15th American Conference on Crystal Growth and Epitaxy, 2003.07.
643. 北嶋具教、劉立軍、柿本浩一, 2重坩堝法におけるLiNbO3原料の連続供給と融液温度に及ぼす影響, 第33回結晶成長国内会議(NCCG-33), 2003.07.
644. 柿本浩一、太子敏則、干川圭吾、劉立軍, 大きな濃度差を持つ固液界面での不純物拡散数値解析, 第33回結晶成長国内会議(NCCG-33), 2003.07.
645. 柿本浩一、石井秀夫、村川淳, 分子動力学法による同位体半導体の熱伝導解析, 第33回結晶成長国内会議(NCCG-33), 2003.07.
646. 太子敏則、劉立軍、干川圭吾、柿本浩一, CZ-Si 結晶成長ミスフイット転位挙動に関わる界面近傍での不純物濃度分布形成機構, 第50回応用物理学関係連合講演会, 2003.03.
647. 北嶋 具教、 原田信一、田代昭正、柿本 浩一, 2重坩堝ACRT法における対流可視化実験及び数値解析, 第50回応用物理学関係連合講演会, 2003.03.
648. 北嶋 具教、 柿本 浩一, 供給したLiNbO3原料の融液への混入メカニズム, 第50回応用物理学関係連合講演会予稿集, 2003.03.
649. 劉立軍、太子敏則、干川圭吾、柿本浩一, 大きな濃度差を持つ固液界面での不純物拡散数値解析, 第50回応用物理学関係連合講演会, 2003.03.
650. 末松護、土橋健太郎、石井秀夫、柿本浩一, 分子動力学による過冷却領域を含む半導体融液の構造解析, 第50回応用物理学関係連合講演会, 2003.03.
651. 村川淳、石井秀夫、柿本浩一, 分子動力学による同位体シリコンの熱伝導解析, 第50回応用物理学関係連合講演会, 2003.03.
652. 北嶋 具教、 柿本 浩一, ACRT法を用いた時のLiNbO3の流動解析, 第52回理論応用力学講演会, 2003.01.
653. A. Murakawa, H. Ishii, K. Kakimoto, An investigation of thermal conductivity of semiconductors as a function of isotope concentration by molecular dynamics, The 8th IUMRS International Conference on Advanced Materials, 2003.01.
654. 北嶋具教、劉立軍、北村健二, 2重坩堝ACRT法における坩堝アスペクト比の原料混入に及ぼす影響, 第64回応用物理学会学術講演会, 2003.01.
655. 北嶋具教、劉立軍、北村健二, 2重坩堝法を用いたLiNbO3の固液界面形状解析, 第64回応用物理学会学術講演会, 2003.01.
656. 劉立軍、柿本浩一, 印加におけるCZ-Si結晶成長の固面界面形状と融液対流の数値解析, 第64回応用物理学会学術講演会, 2003.01.
657. 柿本 浩一、篠崎 高茂、田代 昭正、石井 秀夫, 電磁攪拌によるシリコン結晶育成時の融液流動解析, 第52回理論応用力学講演会, 2003.01.
658. 土橋健太郎、橋本良夫、柿本浩一, 分子動力学法による過冷却シリコンの粘性と構造解析, 第64回応用物理学会学術講演会, 2003.01.
659. 北嶋具教、柿本浩一、北村健二, 2重坩堝ACRT法におけるLiNbO3融液の対流解析, 第47回人工結晶討論会, 2002.11.
660. 柿本浩一、王育人, X線回折によるシリコン融解凝固過程のその場観察, 第47回人工結晶討論会, 2002.11.
661. 柿本浩一, 機能性結晶の製造プロセスにおけるマルチスケール大規模数値計算, 三元・多元機能性材料研究会, 2002.11.
662. 柿本浩一、田代昭正、石井秀夫、篠崎高茂、橋本良夫, 半導体製造プロセスにおける電磁力の応用・マクロとナノスケール融合, 第15回計算機力学講演会, 2002.11.
663. 柿本浩一、篠崎高茂、田代昭正、石井秀夫, Cusp-EMCZにおける電極位置と酸素濃度との関係, 第63回応用物理学会, 2002.09.
664. 北嶋具教、柿本浩一, 2重坩堝ACRT法とチョクラルスキー法におけるLiNbO3融液対流の比較, 第63回応用物理学会, 2002.09.
665. 北嶋具教、柿本浩一, 2重坩堝ACRT法における内坩堝スリットのLiNbO3融液に及ぼす影響, 第63回応用物理学会, 2002.09.
666. 柿本浩一, 結晶成長における熱と物質の移動現象, 第27回結晶成長討論会, 2002.08.
667. 北嶋具教、柿本浩一, 分子動力学法によるGaAs結晶中の空孔と格子間原子の拡散挙動, 第32回結晶成長国内会議, 2002.08.
668. K. Kakimoto, A. Tashiro and T. Shinozaki, ACTIVE CONTROL OF METAL CONVECTION OF SILICON BY ELECTROMAGNETIC FORCE, E-MRS 2002 SPRING MEETING SYMPOSIUM, 2002.06.
669. 柿本浩一、篠崎高茂、田代昭正、石井秀夫, Cusp-EMCZにおけるシリコン融液と酸素の移動メカニズム, 第49回応用物理学関係連合講演会, 2002.03.
670. 柿本浩一、篠崎高茂、田代昭正、小西寛行、北村健二, 2重坩堝ACRT法における水とニオブ酸リチウム融液対流解析, 第49回応用物理学関係連合講演会, 2002.03.
671. 北嶋具教、柿本浩一, 分子動力学法によるGaAs結晶中の格子間原子の拡散挙動, 第49回応用物理学関係連合講演会, 2002.03.
672. Koichi Kakimoto, Crystal Growth from Melts by Computer Video Simulation, The National Committee of Crystallography Academy of Scientific Research and Technology in Cooperation with The IUCR Teaching Commission, 2002.02.
673. 柿本浩一、北村健二, ACRT法における融液攪拌効果の解析, 第32回結晶成長国内会議NCCG-32, 2002.01.
674. 北嶋具教、柿本浩一, 2重坩堝法を用いたニオブ酸リチウム(LiNbO3)の融液対流解析, 第32回結晶成長国内会議NCCG-32, 2002.01.
675. 柿本浩一, 大口径欠陥制御シリコン結晶育成技術   — 現状と今後の展開 —, 応用物理学会分科会, 2002.01.
676. 北嶋具教、柿本浩一, 分子動力学法によるGaAs 結晶中の空孔と格子間原子の拡散現象, 第32回結晶成長国内会議NCCG-32, 2002.01.
677. T. KITASHIMA, K. KAKIMOTO and H. OZOE, Molecular dynamics simulation of points defects in GaAs, Chungnam Branch, Korean Institute of Chemical Engineers Kyushu Branch, 2001.11.
678. 柿本浩一, 2重るつぼにおける融液対流シミュレーション, 第84回結晶成長研究会, 2001.11.
679. 柿本浩一、橋本良夫、石井秀夫、田代昭正、篠崎高茂, EMCZにおけるシリコン溶融と酸素の移動メカニズム, 第62回応用物理学会学術講演会, 2001.09.
680. 北嶋具教、柿本浩一, GaAs結晶内における点欠陥の分子動力学シミュレーション, 第62回応用物理学会学術講演会, 2001.09.
681. 柿本浩一、野口慎一郎、尾添絋之, Si-Ge固溶体結晶の格子変形と点欠陥の拡散過程, 第62回応用物理学会学術講演会, 2001.09.
682. Koichi KAKIMOTO, Si bulk crystal growth: What and how?, Advances in Crystal Growth Research, 2001.08.
683. 柿本浩一, X線解析法によるシリコン固液界面における欠陥形成過程のその場観察, 東北大学金属材料研究所平成12年度研究会 「シリコンの高温における欠陥 挙動」, 2000.12.
684. 柿本浩一 王育人, 高温炉を用いたX線回析によるシリコン固液界面形状の“その場観察”, 東北大学金属材料研究所平成12年度研究会 「シリコンの高温における欠陥挙動」, 2000.12.
685. Yuren Wang, 柿本浩一, An in-situ observation of dislocations and crystal-melt interface during
the melting of silicon, 6th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, 2000.11.
686. 柿本浩一, シリコンの固-液界面の形状のその場観察(転位の効果を中心として), 日本物理学会 第55回年次大会, 2000.09.
687. 柿本浩一 上村昌己 尾添紘之, 異方性応力下におけるシリコン結晶の変形と点欠陥の拡散過程の検討, 第61回応用物理学会学術講演会, 2000.09.
688. 柿本浩一 尾添紘之, 磁場印加下におけるシリコン融液対流の融液高さ依存性, 第61回応用物理学会学術講演会, 2000.09.
689. Yuren Wang, K. Kakimoto, Dislocations and crystal-melt interface shape during the melting of silicon, 第31回結晶成長国内会議, 2000.07.
690. 柿本浩一, 不均一水平磁場印加下におけるシリコン融液中の酸素の輸送現象, 第31回結晶成長国内会議, 2000.07.
691. Yuren Wang, K. Kakimoto, An in-situ X-ray topography observation of dislocations, crystal-melt
interface and melting of silicon, E-MRS-IUMRS ICEM 2000 (International Conference on Electronic, 2000.05.
692. K. Kakimoto, Heat and mass transfer during CZ crystal growth: From atomic scale to
macroscale, Frontier Science Research Conference Science and Technology of Crystal Growth and Epitaxy, 2000.04.
693. 柿本浩一 尾添紘之, 不均一水平磁場印加 CZ における Si 固液界面の酸素濃度分布, 第47回応用物理学関係連合講演会, 2000.03.
694. 柿本浩一 尾添紘之, 不均一水平磁場印加 CZ における Si 融液中の酸素濃度の磁場形状依存性, 第47回応用物理学関係連合講演会, 2000.03.
695. 森友 武 柿本浩一 尾添紘之 稲富裕光, 軸方向磁場印加下における液体金属中のゼーベック効果, 日本マイクログラビティ応用学会 第15回学術講演会, 1999.10.
696. Koichi Kakimoto, T. Umehara, H. Ozoe, Molecular dynamics analysis of point defects in silicon near solid-liquid interface, 3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3), 1999.10, [URL], Molecular dynamics simulation was carried out to clarify pressure effects on diffusion constants of point defects such as a vacancy and an interstitial atom under constant pressure by using Stillinger-Weber potential. The calculated results indicate that the pressure effect on diffusion of the point defects is small during single crystal growth of silicon, since stress. which was obtained by a global heat and mass transfer model is not enough to modify migration process of the point defects. Activation energy of a vacancy and an interstitial atom was obtained as a function of external pressure..
697. 柿本浩一 尾添紘之, HMCZにおけるSi固液界面の酸素濃度分布:坩堝結晶回転数依存性, 第60回応用物理学会学術講演会, 1999.09.
698. Yuren Wang, K. Kakimoto, The melting behavior for dislocation-free silicon : An in-situ observation
with X-ray topograhy, 第60回応用物理学会学術講演会, 1999.09.
699. 柿本浩一 梅原 猛 尾添紘之, 分子動力学法によるシリコン中の点欠陥輸送の検討, 第60回応用物理学会学術講演会, 1999.09.
700. Koichi Kakimoto, T. Umehara, H. Ozoe, Molecular dynamics analysis on diffusion of point defects, 8th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, 1999.09, [URL], Molecular dynamics simulation was carried out to estimate diffusion constants and mechanism of point defects such as a single vacancy and a self-interstitial atom under hydrostatic pressure. The Stillinger-Weber potential was used-as a model potential, which is widely accepted for modeling of silicon crystals and melts. We obtained the following results on a self-interstitial atom from the calculation. (1) Diffusion constants of self-interstitial are almost independent of pressure in the range from -50 to +50 kbar. (2) A self-interstitial atom diffuses with the formation of dumbbell structure, which is aligned in [1 1 0] direction. For single vacancy, the following clarified. (1) Diffusion constants of vacancy are also independent of pressure in the range from -40 to +40 kbar. (2) A vacancy diffuses with a switching mechanism to the nearest-neighbor atoms in lattice site..
701. Yuren Wang, K. Kakimoto, The dislocation behaviour in the vicinity of molten zone : An X-ray topography study of the melting of silicon, Eleventh American Conference on Crystal Growth & Epitaxy, 1999.08.
702. Yuren Wang, K. Kakimoto, Dislocation effect on crystal-melt interface : an X-ray topography study
on the melting of silicon, 第30回結晶成長国内会議, 1999.07.
703. 柿本浩一, マクロと原子レベルの輸送現象の接点, 日本機械学会1999年度年次大会, 1999.07.
704. 柿本浩一 尾添紘之, 水平磁場印加下におけるSi融液中の酸素移動現象, 第30回結晶成長国内会議, 1999.07.
705. K. Kakimoto, Macroscopic and microscopic mass transfer in silicon Czochralski method, '99 International conference of KACG 6th Korea-Japan EMGS, 1999.06.
706. Y. C. Won 柿本浩一 尾添紘之, カスプ磁場CZ法における磁場位置による非定常熱流動への影響, 第36回日本伝熱シンポジウム, 1999.05.
707. 赤松正人 柿本浩一 尾添紘之, 水平方向磁場印加下におけるCz融液の流動現象, 第36回日本伝熱シンポジウム, 1999.05.
708. K. Kakimoto, Melt flow in Czochralski crystal growth system, Crystal Growth Meeting Germany - Japan - Poland, at the Institute, 1999.04.
709. Y. C. Won 柿本浩一 尾添紘之, カスプ磁場CZ法において磁場の印加位置の酸素分布への影響, 第46回応用物理学関係連合講演会, 1999.03.
710. 柿本浩一, シリコン結晶成長における融液流動と凝固界面制御, 第46回応用物理学関係連合講演会, 1999.03.
711. 金田昌之 田川俊夫 尾添紘之 柿本浩一 稲富裕光, 液体金属の自然対流におけるゼーベック効果の影響, 第36回日本伝熱シンポジウム, 1999.03.
712. 柿本浩一, 結晶成長に及ぼす外場の影響, 日本物理学会講演第54回年会, 1999.03.
713. 柿本浩一 尾添紘之, 水平磁場印加下におけるシリコン固液界面近傍の酸素濃度分布, 1999.03.
714. 赤松正人 柿本浩一 尾添紘之, Cz法融液の片流れ, 第11回計算力学講演会, 1998.11.
715. 赤松正人 柿本浩一 尾添紘之, Cz 融液内の対流と熱の不安定性, 第59回応用物理学会学術講演会, 1998.09.
716. Yuren Wang, 柿本浩一 尾添紘之, In-situ observation of silicon solid-liquid interface, 第59回応用物理学会学術講演会, 1998.09.
717. Y. C. Won 柿本浩一 尾添紘之, カスプ磁場 Cz 法における対流の非定常現象に対するカスプ磁場位置の影響, 第59回応用物理学会学術講演会, 1998.09.
718. 柿本浩一 末永英俊 尾添紘之, シリコンの物性の分子動力学解析, 第59回応用物理学会学術講演会, 1998.09.
719. Yoo Cheol Won 柿本浩一 尾添紘之, Characteristics of three-dimensional unsteady convection and Oxygen concentration in silicon melt during Czochralski process under a cusp-shaped
magnetic field, The 12th International Conference on Crystal Growth, 1998.07.
720. 柿本浩一 菊地 晋 尾添紘之, Molecular dynamics simulation of Oxygen in silicon, The 12th International Conference on Crystal Growth, 1998.07.
721. 赤松正人 柿本浩一 尾添紘之, Numerical calculation of oscillation flow in a Czochralski crucible under a transverse magnetic field, The 12th International Conference on Crystal Growth, 1998.07.
722. Yoo Cheol Won 柿本浩一 尾添紘之, Three-dimensional unsteady convection computed for Czochralski silicon
melt under a cusp-shaped magnetic field, The 12th International Conference on Crystal Growth, 1998.07.
723. 柿本浩一 末永英俊 尾添紘之, シリコンの物性の分子動力学解析, 第29回結晶成長国内会議, 1998.07.
724. 田川俊夫 尾添紘之 柿本浩一 稲富裕光, 微小重力下における液体金属のゼーベック効果対流, 第35回日本伝熱シンポジウム, 1998.05.
725. 柿本浩一, 結晶成長におけるカスプ磁場印加効果, 第75期通常総会講演会, 1998.03.
726. 田川俊夫 金田昌之 柿本浩一 尾添紘之, 酸化物融液の磁場印加対流数値解析, 化学工学会第63年会 関西大学, 1998.03.
727. 柿本浩一 菊地 晋 尾添紘之, 分子動力学法によるシリコン中の酸素の運動解析, 第45回応用物理学関係連合講演会, 1998.03.
728. H. Fukui, Koichi Kakimoto, H. Ozoe, Convection under an axial magnetic field in a Czochralski configuration, Proceedings of the 1998 5th International Conference on Advanced Computational Methods in Heat Transfer, 1998, Numerical computations were carried out for the mixed convection of liquid metal in a Czochralski configuration under an axial magnetic field. A crystal rod was rotated and a crucible static. For a static crucible, an application of an axial magnetic field yielded a rotation of a fluid column under a crystal rod. This was due to complicated effects of a Lorentz force..
729. Masahito Watanabe, Minoru Eguchi, Koichi Kakimoto, Taketoshi Hibiya, Three-dimensional visualization of molten silicon convection, Winter Annual Meeting of the American Society of Mechanical Engineers, 1991, Molten silicon convection during single crystal growth by the Czochralski method was visualized three-dimensionally by the individually developed double-beam X-ray radiography system with solid tracer method. The purpose of the present paper is to clarify the three-dimensional structure of torus-like flow pattern of molten silicon which has low Prandtl number. The root-mean-square velocity for one specific tracer was 21 mm/sec. The most impressive result was as follows; a flow field with larger azimuthal velocity than the rotational velocity of the crucible exists just beneath the crystal, while the flow field with smaller or negative azimuthal velocity exists near the crucible wall. This azimuthal flow modulation can be explained by the Coriolis force..
730. Koichi Kakimoto, H. Ohno, R. Katsumi, Y. Abe, H. Hasegawa, T. Katoda, CHARACTERISATION OF THERMAL INSTABILITY IN GaAs-AlAs AND GaAs-InAs SUPERLATTICES WITH LASER RAMAN SPECTROSCOPY., 1985, Thermal instability of GaAs-AlAs and GaAs-InAs superlattices was studied by Raman spectroscopy. Samples with various periods and grown at various temperatures were investigated to understand the stability of interface in superlattice and to obtain an activation energy of mixing by thermal annealing. Mixing occurred more easily in GaAs-InAs strained superlattice than GaAs-AlAs strain-free superlattice. Samples grown at a lower temperature are more stable against thermal annealing than those grown at a higher temperature..

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