Kyushu University Academic Staff Educational and Research Activities Database
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Koichi Kakimoto Last modified date:2018.07.20



Graduate School
Other Organization
Administration Post
Other


E-Mail
Homepage
http://www.riam.kyushu-u.ac.jp/nano/index_e.html
On the Nano-Mechanics section .
Phone
092-583-7741
Fax
092-583-7743
Academic Degree
Dr. of Engineering
Field of Specialization
Crystal Growth
Research
Research Interests
  • Crystal growth of semiconductors
    keyword : Solar cells, Energy saving, Crystal growth, Semiconductor, Simulation
    2001.04Development of a global simulator regarding high efficiency solar cells.
Current and Past Project
  • Development of crystal growth of pure silicon for power devices
  • Development of crystal growth of pure silicon for power devices
  • Development of super high efficiency solar cell
  • A new code was developped for semiconductors of low-power consumption.
  • Development of new process with low temperature for semiconductor.
  • We succeeded in in-situ observation of melting and solidification process by using X-ray topography with an original furnace.
Academic Activities
Papers
1. Lijun Liu, Koichi Kakimoto, 3D global analysis of CZ-Si growth in a transverse magnetic field with various crystal growth rates, Journal of Crystal Growth, 10.1016/j.jcrysgro.2004.11.185, 275, 1-2, E1521-E1526, 2005.02, A series of computations were performed for Czochralski silicon crystal growth in a transverse magnetic field with different crystal growth rates by using a recently developed three-dimensional global model. The effects of the transverse magnetic field and crystal growth rate on the melt-crystal interface were numerically investigated. It was found that the interface shape is three-dimensional when the crystal is not rotating, while it becomes nearly two-dimensional when the crystal is rotating, even at a low rotation rate. The temperature gradient in the axial direction at the melt-crystal interface increases with increase in crystal growth rate except near the crystal edge, where it changes oppositely..
2. Lijun Liu, Satoshi Nakano and Koichi Kakimoto, Advancement of Numerical Investigation of a Silicon Czochralski Growth with Application of a Transverse Magnetic Field, 日本結晶成長学会誌, 2005.01.
3. Koichi Kakimoto, Atsushi Murakawa and Hideo Ishii, An Investigation of Temperature Dependence of Thermal Conductivity of Isotope Silicon, Transactions of the Materials Research Society of Japan, 2004.01.
4. JS. Szmyd, M. Jaszczur, H. Ozoe and K. Kakimoto, An analysis of natural convection with radiation from the free surface of the fluid in a vertical cylinder, JSME International Journal Series B-Fluids and Thermal Engineering, 43, 4, 679-685, Vol. 43,pp679-685,, 2000.01.
5. Lijun Liu, Satoshi Nakano and Koichi Kakimoto, An analysis of temperature distribution near the melt-crystal interface in silicon Czochralski growth with a transverse magnetic field, Journal of Crystal Growth, 10.1016/j.jcrysgro.2005.05.002, 282, 1-2, 49-59, 2005.01.
6. Yuren Wang, Koichi Kakimoto, An in-situ observation of dislocation and crystal-melt interface during the melting silicon, Solid State Phenomena, 78-79, 217-224, Vols.78-79, pp217-224, 2001.01.
7. Atsushi Murakawa, Hideo Ishii and Koichi Kakimoto, An investigation of thermal conductivity of silicon as a function of isotope concentration by molecular dynamics, Journal of Crystal Growth, 10.1016/j.jcrysgro.2004.04.040, 267, 3-4, 452-457, 2004.07.
8. K. Kakimoto, A. Murakawa Y. Hashimoto, An investigation of thermal conductivity of isotope silicon as a function of temperature estimated by molecular dynamics, Journal of Crystal Growth, 10.1016/j.jcrysgro.2004.11.014, 275, 1-2, E427-E432, 2005.02.
9. Hiroyuki Ozoe, Koichi Kakimoto, Masato Akamatsu and Yoo Cheol Won, Application of various magnetic fields for the melt in a Czochralski
crystal growing system, 20th International Congress of Theoretical and Applied Mechanics, 2000.08.
10. Koichi Kakimoto, Atomic and macroscale simulation of transport phenomena during crystal growth, 2000 IAMS International Seminar on Thermal Design and Management for Electronic Equipment and Material, pp.130-137, 2000.10.
11. Lijun Liu, Koichi Kakimoto, Toshinori Taishi and Keigo Hoshikawa,, Computational study of formation mechanism of impurity distribution in a silicon crystal during solidification, Journal of Crystal Growth, 10.1016/j.jcrysgro.2004.02.077, 265, 3-4, 399-409, 2004.01.
12. Koichi Kakimoto , Crucible and crystal rotation effects on oxygen distribution at an interface between solid and liquid of silicon under transverse magnetic fields, Proceedings of the Fourth Symposium on Atomic-scale Surface and Interface Dynamics, pp.89-94, 2000.03.
13. Wang YR, Kakimoto K., Crystal-melt interface shape and dislocations during the melting of silicon, J CRYST GROWTH, 10.1016/S0022-0248(02)01833-X, 247, 1-2, 1-12, 2003.01.
14. Koichi Kakimoto, Development of crystal growth technique of silicon by the Czochralski method, Acta Physica Polonica A, 10.12693/APhysPolA.124.227, 124, 2, 227-230, 2013.08, We report on the Czochralski method for single silicon crystal growth and discuss heat and mass transfer and defect formation in the crystal. A reflector was used for separation of the heating and cooling areas in the furnace enabling us to speed up crystal growth. The melt flow to stabilize the temperature distribution in a crucible was controlled using transverse magnetic fields in a large-scale silicon Czochralski furnace. The setup allows for changes in important parameters of point defect formation to be made, such as vacancies and interstitials, by changing temperature and flow fields in the furnace. A numerical calculation was developed to predict the tendency for growth of a vacancy rich or interstitial rich crystal by estimating the value of the ratio between the growth rate and temperature gradient in the crystals..
15. M. Watanabe, K. W. Yi, T. Hibiya and K. Kakimoto, Direct observation and numerical simulation of molten silicon flow during crystal growth under magnetic fields by X-ray radiography and large-scale computation, Progress in Crystal Growth and Characterization of Materials, 10.1016/S0960-8974(99)00013-3, 38, 1-4, 215-238, Vol.38, No. 1-4, pp.215-238, 1999, 1999.12.
16. Yuren Wang, Koichi Kakimoto, Dislocation and Crystal-melt Interface In the Melting Processes of Silicon, Proceedings of the Fifth Symposium on Atomic-scale Surface and Dynamics, pp133-140, 2001.01.
17. Yuren Wang and Koichi Kakimoto, Dislocation effect on crystal-melt interface: an in situ observation of the melting of silicon, J. of Crystal Growth, 10.1016/S0022-0248(99)00406-6, 208, 1-4, 303-312, Vol.208, pp.303-312, 2000.12.
18. Yuren Wang and Koichi Kakimoto, Dislocations and crystal-melt interface in the melting prosesses of silicon, Proceedings of the fifth symposium on atomic-scale surface and interface dynamics, No. 12, March 1-2, pp.133-140, 2001.03.
19. Lijun Liu and Koichi Kakimoto, Effects of Magnetic Fields on Melt-Crystal Interface Shape and Melt Flow in Czochralski Silicon Growth, Proceedings of the 5th International Conference of Single Crystal Growth and Heat & Mass Transfer, Obninsk, Russia, 2003.01.
20. K. Kakimoto, Effects of rotating magnetic fields on temperature and oxygen distributions in silicon melt, Journal of Crystal Growth 237-239, 10.1016/S0022-0248(01)02341-7, 237, 1785-1790, pp1785-1790, 2002.01.
21. Tomonori Kitashima, Lijun Liu, Kenji Kitamura and Koichi Kakimoto, Effects of shape of an inner crucible on convection of lithium niobate melt in a double-crucible Czochralski process using the accelerated crucible rotation technique, Journal of Crystal Growth, 10.1016/j.jcrysgro.2004.04.026, 267, 3-4, 574-582, 2004.01.
22. Lijun Liu, Tomonori Kitashima and Koichi Kakimoto, Global analysis of effects of magnetic field configuration on melt-crystal interface shape and melt flow in CZ-Si crystal growth, Journal of Crystal Growth, 10.1016/j.jcrysgro.2004.11.292, 275, 1-2, E2135-E2139, 2005.01.
23. Koichi KAKIMOTO, Heat and Mass Transfer during CZ Crystal Growth: from Atomic Scale to Macro Scale, Abstract of Fourth Asian –Pacific Conference on Aerospace Technology and Science, 2002.01.
24. Koichi Kakimoto and Hiroyuki Ozoe, Heat and mass transfer during crystal growth, Computational Materials Science 10, 10.1016/S0927-0256(97)00090-6, 10, 1-4, 127-133, pp.127-133(招待講演), 1998.01.
25. Koichi Kakimoto, Heat and mass transfer in silicon melt under magnetic fields, First International School on Crystal Growth Technology, pp.172-186, 1998.10.
26. Koichi Kakimoto, Heat and mass transfer during CZ crystal growth : From atomic scale to macro scale, Second International School on Crystal Growth Technology, pp.122-144, 2000.08.
27. Koichi Kakimoto, Heat and mass transfer in Czochralski silicon crystal growth under magnetic fields, 20th International Congress of Theoretical and Applied Mechanics, 2000.08.
28. Koichi Kakimoto, Takashige Shinozaki and Yoshio Hashimoto, Heat and oxygen transfer in silicon melt in an electromagnetic Czochralski system with transverse magnetic fields, Int. J. Materials and Product Technology, 22, 1-3, 84-94, 2005.01.
29. Takahiro Kawamura, Yoshihiro Kangawa and Koichi Kakimoto, Investigation of thermal conductivity of GaN by molecular dynamics, Journal of Crystal Growth, 10.1016/j.jcrysgro.2005.07.018, 284, 1-2, 197-202, 2005.01.
30. Hideo Ishii, Atsushi Murakawa and Koichi Kakimoto, Isotope-concentration dependence of thermal conductivity of germanium investigated by molecular dynamics, Journal of Applied Physics, 10.1063/1.1711159, 95, 11 I, 6200-6203, 2004.06.
31. Koichi Kakimoto, Macroscopic and microscopic mass transfer in silicon Czochralski method, Korean Association of Crystal Growth, Vol.9, No. 4, pp.381-383, 1999.12.
32. Koichi Kakimoto, Akimasa Tashiro, Takashige Shinozaki, Hideo Ishii, Yoshio Hashimoto, Mechanisms of heat and oxygen transfer in silicon melt in an electromagnetic Czochralski system, Journal Of CRYSTAL GROWTH 243, 10.1016/S0022-0248(02)01473-2, 243, 1, 55-65, pp55-65, 2002.08.
33. Koichi Kakimoto, Melt flow in Czochralski crystal growth system From macro to micro- Crystal Growth Meeting Germany-Japan-Poland, the Institute of Crystal Growth (IKZ) in Berlin, p24, 1999.04.
34. K. Kakimoto, T. Umehara, H. Ozoe, Molecular dynamics analysis on diffusion of point defects, Journal of Crystal Growth, 10.1016/S0022-0248(99)00646-6, 210, 1-3, 54-59, 2000.01.
35. Koichi Kakimoto Takeshi Umehara and Hiroyuki Ozoe, Molecular dynamics analysis of point defects in silicon near solid-liquid interface, Applied Surface Science, 10.1016/S0169-4332(00)00121-5, 159, 387-391, pp. 387-391, 2000.09.
36. Tomonori Kitashima, Koichi Kakimoto and Hiroyuki Ozoe, Molecular dynamics analysis of diffusion of point defects in GaAs, Journal of The Electrochemical Society, 10.1149/1.1543569, 150, 3, G198-G202, 2003.03.
37. Koichi Kakimoto, Shin Kikuchi and Hiroyuki Ozoe, Molecular dynamics simulation of oxygen in silicon melt, The Second Symposium on Atomic-scale Surface and Interface Dynamics, pp.85-90, 1998.02.
38. Koichi Kakimoto, Shin Kikuchi, Hiroyuki Ozoe, Molecular dynamics simulation of oxygen in silicon melt, Journal of Crystal Growth, 10.1016/S0022-0248(98)01115-4, 198-199, PART I, 114-119, 1999.01, Molecular dynamic simulation of an oxygen atom in silicon crystal and the melt was carried out to obtain the diffusion constants of oxygen in the melt. The simulation using mixed potential in the melt, in which an oxygen atom and 216 silicon atoms were taken into account has been carried out. Vibration frequencies of oxygen and vacancy-oxygen (V-O) pair in the crystal have been calculated. Calculated frequency of oxygen and V-O pair were 1000 and 820 cm-1, respectively, while the experimental results which were obtained from Fourier transform spectra of infrared absorption (FTIR) are 1100 and 830 cm-1, respectively. Oxygen diffusion constant was obtained in an elevated temperature of 1700 K. Calculated diffusion constant of oxygen in the melt was 1 × 10-4 cm2/s..
39. Lijun Liu Tomonori Kitashima and Koichi Kakimoto, Numerical Analysis of Effects of Crystal and Crucible Rotations on Melt-Crystal Interface Shape and Melt Flow in CZ Growth by Global Simulation, Proceedings of the International Symposium on Processing Technology and Market Development of 300mm Si Materials (ISPM-300mm Si), Beijing, China, 2003.01.
40. Lijun LIU and Koichi KAKIMOTO, Numerical Analysis of a TMCZ Silicon Growth Furnace by Using a 3D Global Model, Reports of Research Institute for Applied Mechanics,Kyushu University,, 2004.01.
41. Lijun Liu and Koichi Kakimoto, Numerical Study of the Effect of Magnetic Fields on Melt-Crystal Interface-Deflection in Czochralski Crystal Growth, Proceedings of the 2003 ASME Summer Heat Transfer Conference, 2003.01.
42. Janusz S. Szmyd, M. Jaszczur, H. Ozoe and K. Kakimoto, Numerical analysis of buoyancy driven convection and radiation from the free surface of the fluid in a vertical cylinder, 3rd European Thermal Sciences Conference, Heidelberg, Germany, 2000.09.
43. Lijun Liu Tomonori Kitashima and Koichi Kakimoto, Numerical analysis of effects of crystal and crucible rotations on melt-crystal interface shape and melt flow in CZ growth by global simulation, A Chinese Journal of Science, Technology & Applications in the Field of Rare Metals, 2003.01.
44. Tomonori Kitashima, Lijun Liu, Kenji Kitamura and Koichi Kakimoto, Numerical analysis of continuous charge of lithium niobate in a double-crucible Czochralski system using the accelerated crucible rotation technique, Journal of Crystal Growth, 10.1016/j.jcrysgro.2004.02.036, 266, 1-3, 109-116, 2004.01.
45. Masato Akamatsu, Koichi Kakimoto and Hiroyuki Ozoe, Numerical calculation of natural and mixed convection in a Czochralski crucible under transverse magnetic fields Heat Transfer 1998, Proceedings of 11th IHTC, 239-244, Vol.3, pp.239-244, 1998.08.
46. Masato Akamatsu, Koichi Kakimoto and Hiroyuki Ozoe, Numerical computation for the secondary convection in a Czochralski
crystal growing system with a rotating crucible and astatic crystal rod, Journal of Materials Processing & Manufacturing Science, 5, 4, 329-348, Vol.5, No.4, pp.329-348, 1998.04.
47. Xiaobo Wu, Koichi Kakimoto, Hiroyuki Ozoe and Zengyue Guo, Numerical study of natural convection in Czochralski crystallization, The Chemical Engineering Journal, 10.1016/S1385-8947(98)00114-4, 71, 3, 183-189, Vol.71, pp.183-189, 1998.12.
48. Koichi Kakimoto, Lijun Liu, Numerical study of the effects of cusp-shaped magnetic fields and thermal conductivity on the melt-crystal interface in CZ crystal growth, Crystal Research and Technology, 38, 7-8, 716-725, 2003.08, A numerical study was carried out to determine the effects of magnetic fields and thermal conductivity of a crystal on the melt flow in a crystal growth system. Comparisons of computations for the case of no magnetic field and for two types of cusp-shaped magnetic fields were made. The effect of thermal conductivity of a crystal on the shape of a melt-crystal interface was also investigated. The computation results showed that the magnetic fields have clear effects on both the pattern and strength of flow of the melt and the interface shape. Application of a magnetic field to the Czochralski system is therefore an effective tool for controlling the quality of bulk crystal during Czochralski growth process. The results also showed that the shape of the interface could be modified by changing thermal conductivity of silicon..
49. Masato Akamatsu, Hiroyuki Ozoe, Koichi Kakimoto and Tsuguo Fukuda, One-sided natural and mixed convection computed for liquid metal in a Czochralski configuration, 5th ASME/JSME Joint Thermal Eng. Conf, 1999.03.
50. Koichi Kakimoto and Hiroyuki Ozoe, Oxygen distribution at a solid-liquid interface of silicon under transverse magnetic fields, J. of Crystal Growth, 10.1016/S0022-0248(00)00329-8, 212, 3-4, 429-437, Vol. 212, Nos. 3/4, pp.429-437, 2000.06.
51. Koichi Kakimoto, Oxygen distribution in silicon melt under inhomogeneous transverse magnetic fields, Third International Workshop on Modeling in Crystal Growth, 10.1016/S0022-0248(01)01315-X, 230, 1-2, 100-107, pp.181-200, 2000.11.
52. K. KAKIMOTO, Oxygen distributions in silicon melt under inhomogeneous transverse-magnetic fields, Journal of Crystal Growth , 10.1016/S0022-0248(01)01315-X, 230, 1-2, 100-107, pp100-107, 2001.08.
53. Lijun Liu and Koichi Kakimoto, Partly three-dimensional global modeling of a silicon Czochralski furnace. I. Principles, formulation and implementation of the model, International Journal of Heat and Mass Ttransfer, 10.1016/j.ijheatmasstransfer.2005.04.031, 48, 21-22, 4481-4491, 2005.01.
54. Lijun Liu and Koichi Kakimoto, Partly three-dimensional global modeling of a silicon Czochralski furnace.II. Model application: Analysis of a silicon Czochralski furnace in a transverse magnetic field, International Journal of Heat and Mass Transfer, 10.1016/j.ijheatmasstransfer.2005.04.030, 48, 21-22, 4492-4497, 2005.01.
55. Yoji Yamanaka, Koichi Kakimoto, Hiroyuki Ozoe, Stuart W. Churchill, Rayleigh-Benard oscillatory natural convection of liquid gallium heated from below, The Chemical Engineering Journal, 10.1016/S1385-8947(98)00100-4, 71, 3, 201-205, Vol.71, pp.201-205, 1998.12.
56. Koichi Kakimoto, Hiroyuki Ozoe, Segregation of oxygen at a solid/liquid interface in silicon, Journal of the Electrochemical Society, 10.1149/1.1838541, 145, 5, 1692-1695, 1998.01, The incorporation of oxygen into silicon single crystals from the melt is examined in terms of an experiment and a model on a transient solidification. A transient analysis offered an effective segregation coefficient of oxygen in silicon and a diffusion constant of oxygen in the melt almost independently. The analysis estimated these values of effective segregation coefficient of oxygen in silicon and diffusion constant of oxygen in the melt..
57. K. Sato, Y. Furukawa and K. Nakajima,Koichi KAKIMOTO, Si bulk crystal growth: What and how?, Advances in Crystal Growth Research, 10.1016/B978-044450747-1/50036-3, 155-166, pp155-166, 2001.01.
58. K. Kakimoto, L. Liu, T. Kitashima, A. Murakawa and Y. Hashimoto, Silicon crystal growth from the melt: Analysis from atomic and macro scales, Cryst. Res. Technol, 10.1002/crat.200410343, 40, 4-5, 307-312, 2005.01.
59. Koichi Kakimoto, Hiroyuki Konishi, Akimasa Tashiro, Yoshio Hashimoto, Hideo Ishii, Takashige Shinozaki and Kenji Kitamura, Stabilization of Melt Convection of Lithium Niobate Using Accelerated Crucible Rotation Technique, Journal of The Electrochemical Society, 10.1149/1.1566421, 150, 5, J17-J22, 2003.01.
60. Hiroshi Tomonori, Mitsuo Iwamoto, Koichi Kakimoto, Hiroyuki Ozoe, Kenjiro Suzuki, Tsuguo Fukuda, Standing-oscillatory natural convection computed for molten silicon in Czochralski configuration, Chemical Engineering Journal, 10.1016/S1385-8947(98)00115-6, 71, 3, 191-200, 1998.01.
61. Shin Nakamura, Taketoshi Hibiya, Koichi Kakimoto, Nobuyuki Imaishi, Shinichi Nishizawa, Akira Hirata, Kusuhiro Mukai, Shin Ichi Yoda, Tomoji S. Morita, Temperature fluctuations of the Marangoni flow in a liquid bridge of molten silicon under microgravity on board the TR-IA-4 rocket, Journal of Crystal Growth, 10.1016/S0022-0248(97)00440-5, 186, 1-2, 85-94, 1998.03, Temperature fluctuation measurements in a liquid bridge of molten silicon, which shows the Marangoni flow in highly super-critical condition, are performed in a half-zone configuration under microgravity on board a TR-IA-4 rocket and on the ground. In the microgravity experiment, two types of temperature oscillation are observed during the melting process of silicon and in the cylindrical half-zone melt. The former oscillation, which has a frequency of about 0.1 Hz during the melting process, has an antiphase correlation of temperature oscillation measured in thermocouples separated by 90° azimuthal angles. The latter oscillation in the cylindrical liquid bridge has no remarkable frequency; however, it tends to have the antiphase correlation in between thermocouples with 180° azimuthal angles. In the ground experiment, temperature fluctuations have a characteristic frequency of 0.2 Hz and there is an antiphase correlation of temperatures in thermocouples with 180° azimuthal angles by using the slender melt zone..
62. Lijun Liu, Tomonori Kitashima and Koichi Kakimoto, The Effects of Magnetic Fields on Melt Convection in Czochralski Silicon Growth Analyzed by 3D Global Calculation, Computational mechanics, WCCM VI in conjunction with APCOM’04, 2004.01.
63. Hideto Fukui, Koichi Kakimoto and Hiroyuki Ozoe, The convection under an axial magnetic field in a Czochralski configuration
Advanced Computational Methods in Heat Transfer, Heat Transfer V, 135-144, pp.135-144, 1998.06.
64. Yuren Wang and Koichi Kakimoto, The dislocation behaviour in the vicinity of molten zone : An X-ray topography study of the melting of silicon, Eleventh American Conference on Crystal Growth & Epitaxy(ACCGE-11),, p. 106, 1999.08.
65. Yuren Wang and Koichi Kakimoto, The shape of solid-melt interface estimated from in-situ X-ray topograph observation, Proceedings of the Fourth Symposium on Atomic-scale Surface and Interface Dynamics, pp.95-100, 2000.03.
66. Yoo Cheol Won, Koichi Kakimoto and Hiroyuki Ozoe, Transient analysis of melt flow under inhomogeneous magnetic fields, The Second Symposium on Atomic-scale Surface and Interface Dynamics, pp.57-62, 1998.02.
67. Yoo Cheol Won, Koichi Kakimoto and Hiroyuki Ozoe, Transient three-dimensional numerical computation for silicon melt under a cusp-shaped magnetic field, 5th ASME/JSME Joint Thermal Eng. Conf, 1999.03.
68. Yoo Cheol Won, Koichi Kakimoto, Hiroyuki Ozoe, Transient three-dimensional flow characteristics of Si melt in a Czochralski configuration under a cusp-shaped magnetic field, Numerical Heat Transfer; Part A: Applications, 36, 6, 551-561, 1999.11, Transient three-dimensional numerical computations were carried out for the convection of silicon melt in a Czochralski configuration under a cusp-shaped magnetic field. Numerical conditions are Ha = 0 and 161 with Pr = 0.013, Ra = 3.92×105, Recr = 1329, and Recu = -1596. Computed results show elliptic velocity and temperature profiles near the top of the melt that rotate in a circumferential direction of a crucible even under an axially symmetric cusp-shaped magnetic field at Ha = 161. Elliptic velocity and temperature distributions were stable but oscillating as a function of time. Velocity and temperature oscillation became a rather regular periodic structure under a cusp-shaped magnetic field in comparison with the nonmagnetic case..
69. Yoo Cheol Won, Koichi Kakimoto and Hiroyuki Ozoe, Visualization of the heat and mass transfer as well as the melt convection under a cusp-shaped magnetic field, The Eleventh Symposium on Chemical Engineering, Kyushu-Taejon/Chungnam, pp.327-328, 1998.10.
70. 柿本浩一、野口真一郎、尾添紘之, 分子動力学法による半導体中の欠陥の拡散挙動解析, 日本機械学会熱工学講演会論文集, N0.01-9, 2001.11.
71. Transport Mechanism of Point Defects in Silicon Crystals estimated by Molecular Dynamics.
72. Physical properties of silicon estimated by molecular dynamics under a condition of constant temperature and pressure.
73. 柿本浩一、王育人, X線回折によるシリコン融解凝固過程のその場観察, 第47回人工結晶討論会講演要旨集, pp60-70, 2002.01.
Awards
  • This prize is for contribution to internationl relationship of JACG.
  • 学外
  • 学外