Kyushu University Academic Staff Educational and Research Activities Database
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Koichi Kakimoto Last modified date:2017.10.17



Graduate School
Other Organization
Administration Post
Other


E-Mail
Homepage
http://www.riam.kyushu-u.ac.jp/nano/index_e.html
On the Nano-Mechanics section .
Phone
092-583-7741
Fax
092-583-7743
Academic Degree
Dr. of Engineering
Field of Specialization
Crystal Growth
Research
Research Interests
  • Crystal growth of semiconductors
    keyword : Solar cells, Energy saving, Crystal growth, Semiconductor, Simulation
    2001.04Development of a global simulator regarding high efficiency solar cells.
Current and Past Project
  • Development of crystal growth of pure silicon for power devices
  • Development of crystal growth of pure silicon for power devices
  • Development of super high efficiency solar cell
  • A new code was developped for semiconductors of low-power consumption.
  • Development of new process with low temperature for semiconductor.
  • We succeeded in in-situ observation of melting and solidification process by using X-ray topography with an original furnace.
Academic Activities
Papers
1. Koichi Kakimoto, Development of Crystal Growth Technique of Silicon by the Czochralski Method, ACTA PHYSICA POLONICA 4, Vol.124, (2013), 2013.08.
2. K. Kakimoto, L. Liu, T. Kitashima, A. Murakawa and Y. Hashimoto, Silicon crystal growth from the melt: Analysis from atomic and macro scales, Cryst. Res. Technol, 40, 4-5, 2005.01.
3. Lijun Liu and Koichi Kakimoto, Partly three-dimensional global modeling of a silicon Czochralski furnace.II. Model application: Analysis of a silicon Czochralski furnace in a transverse magnetic field, International Journal of Heat and Mass Transfer, 48, 21-22, 2005.01.
4. Lijun Liu and Koichi Kakimoto, Partly three-dimensional global modeling of a silicon Czochralski furnace. I. Principles, formulation and implementation of the model, International Journal of Heat and Mass Ttransfer, 48, 21-22, 2005.01.
5. Takahiro Kawamura, Yoshihiro Kangawa and Koichi Kakimoto, Investigation of thermal conductivity of GaN by molecular dynamics, Journal of Crystal Growth, 284, 1-2, 2005.01.
6. Koichi Kakimoto, Takashige Shinozaki and Yoshio Hashimoto, Heat and oxygen transfer in silicon melt in an electromagnetic Czochralski system with transverse magnetic fields, Int. J. Materials and Product Technology, 22, 1-3, 2005.01.
7. Lijun Liu, Tomonori Kitashima and Koichi Kakimoto, Global analysis of effects of magnetic field configuration on melt-crystal interface shape and melt flow in CZ-Si crystal growth, Journal of Crystal Growth, 275, 1-2, 2005.01.
8. K. Kakimoto, A. Murakawa Y. Hashimoto, An investigation of thermal conductivity of isotope silicon as a function of temperature estimated by molecular dynamics, Journal of Crystal Growth, 275, 1-2, 2005.01.
9. Lijun Liu, Satoshi Nakano and Koichi Kakimoto, An analysis of temperature distribution near the melt-crystal interface in silicon Czochralski growth with a transverse magnetic field, Journal of Crystal Growth, 282, 1-2, 2005.01.
10. Lijun Liu, Satoshi Nakano and Koichi Kakimoto, Advancement of Numerical Investigation of a Silicon Czochralski Growth with Application of a Transverse Magnetic Field, 日本結晶成長学会誌, 2005.01.
11. Lijun Liu and Koichi Kakimoto, 3D global analysis of CZ-Si growth in a transverse magnetic field with various crystal growth rates, Journal of Crystal Growth, 275, 1-2, 2005.01.
12. Koichi KAKIMOTO, Modeling of fluid dynamics in the Czochralski Growth of Semiconductor Crystals, Crystal Growth-From Fundamentals to Technology, 2004.01.
13. Hideo Ishii, Atsushi Murakawa and Koichi Kakimoto, Isotope-concentration dependence of thermal conductivity of germanium investigated by molecular dynamics, Journal of Applied Physics, 95, 11, 2004.01.
14. Tomonori Kitashima, Lijun Liu, Kenji Kitamura and Koichi Kakimoto, Effects of shape of an inner crucible on convection of lithium niobate melt in a double-crucible Czochralski process using the accelerated crucible rotation technique, Journal of Crystal Growth, 267, 3-4, 2004.01.
15. Lijun Liu, Koichi Kakimoto, Toshinori Taishi and Keigo Hoshikawa,, Computational study of formation mechanism of impurity distribution in a silicon crystal during solidification, Journal of Crystal Growth, 265, 3-4, 2004.01.
16. Atsushi Murakawa, Hideo Ishii and Koichi Kakimoto, An investigation of thermal conductivity of silicon as a function of isotope concentration by molecular dynamics, Journal of Crystal Growth, 267, 3-4, 2004.01.
17. Koichi Kakimoto, Atsushi Murakawa and Hideo Ishii, An Investigation of Temperature Dependence of Thermal Conductivity of Isotope Silicon, Transactions of the Materials Research Society of Japan, 2004.01.
18. Lijun Liu, Tomonori Kitashima and Koichi Kakimoto, The Effects of Magnetic Fields on Melt Convection in Czochralski Silicon Growth Analyzed by 3D Global Calculation, Computational mechanics, WCCM VI in conjunction with APCOM’04, 2004.01.
19. Tomonori Kitashima, Lijun Liu, Kenji Kitamura and Koichi Kakimoto, Numerical analysis of continuous charge of lithium niobate in a double-crucible Czochralski system using the accelerated crucible rotation technique, Journal of Crystal Growth, 266, 1-3, 2004.01.
20. Lijun LIU and Koichi KAKIMOTO, Numerical Analysis of a TMCZ Silicon Growth Furnace by Using a 3D Global Model, Reports of Research Institute for Applied Mechanics,Kyushu University,, 2004.01.
21. Koichi Kakimoto, Hiroyuki Konishi, Akimasa Tashiro, Yoshio Hashimoto, Hideo Ishii,, Stabilization of Melt Convection of Lithium Niobate Using Accelerated Crucible Rotation Technique, J. ELECTROCHEMICAL SOC, 150, 5, Vol.150, No. 5,ppJ17-J22, 2003.05.
22. Kitashima T. , Kakimoto K. , Ozoe H., Molecular dynamics analysis of diffusion of point defects in GaAs, J ELECTROCHEM SOC 150, 150, 3, 2003.03.
23. Koichi Kakimoto, Hiroyuki Konishi, Akimasa Tashiro, Yoshio Hashimoto, Hideo Ishii, Takashige Shinozaki and Kenji Kitamura, Stabilization of Melt Convection of Lithium Niobate Using Accelerated Crucible Rotation Technique, Journal of The Electrochemical Society, 150, 5, 2003.01.
24. Koichi Kakimoto and Lijun Liu, Numerical study of the effects of cusp-shaped magnetic fields and thermal conductivity on the melt-crystal interface in CZ crystal growth, Crystal Research and Technology, 38, 7-8, vol. 38, No. 7-8, 716-725, 2003.01.
25. Lijun Liu Tomonori Kitashima and Koichi Kakimoto, Numerical analysis of effects of crystal and crucible rotations on melt-crystal interface shape and melt flow in CZ growth by global simulation, A Chinese Journal of Science, Technology & Applications in the Field of Rare Metals, 2003.01.
26. Lijun Liu and Koichi Kakimoto, Numerical Study of the Effect of Magnetic Fields on Melt-Crystal Interface-Deflection in Czochralski Crystal Growth, Proceedings of the 2003 ASME Summer Heat Transfer Conference, 2003.01.
27. Lijun Liu Tomonori Kitashima and Koichi Kakimoto, Numerical Analysis of Effects of Crystal and Crucible Rotations on Melt-Crystal Interface Shape and Melt Flow in CZ Growth by Global Simulation, Proceedings of the International Symposium on Processing Technology and Market Development of 300mm Si Materials (ISPM-300mm Si), Beijing, China, 2003.01.
28. Tomonori Kitashima, Koichi Kakimoto and Hiroyuki Ozoe, Molecular dynamics analysis of diffusion of point defects in GaAs, Journal of The Electrochemical Society, 150, 3, 2003.01.
29. Lijun Liu and Koichi Kakimoto, Effects of Magnetic Fields on Melt-Crystal Interface Shape and Melt Flow in Czochralski Silicon Growth, Proceedings of the 5th International Conference of Single Crystal Growth and Heat & Mass Transfer, Obninsk, Russia, 2003.01.
30. Wang YR, Kakimoto K., Crystal-melt interface shape and dislocations during the melting of silicon, J CRYST GROWTH, 247, 1-2, 2003.01.
31. Koichi Kakimoto, Akimasa Tashiro, Hideo Ishii, Takashige Shinozaki, Active control of convection of silicon by electromagnetic force under cusp-shaped magnetic fields, Materials Science in Semiconductor processing 5, pp.341-345, 2003.01.
32. 柿本浩一、王育人, X線回折によるシリコン融解凝固過程のその場観察, 第47回人工結晶討論会講演要旨集, pp60-70, 2002.01.
33. Koichi Kakimoto, Akimasa Tashiro, Takashige Shinozaki, Hideo Ishii, Yoshio Hashimoto, Mechanisms of heat and oxygen transfer in silicon melt in an electromagnetic Czochralski system, Journal Of CRYSTAL GROWTH 243, 243, 1, pp55-65, 2002.01.
34. Koichi KAKIMOTO, Heat and Mass Transfer during CZ Crystal Growth: from Atomic Scale to Macro Scale, Abstract of Fourth Asian –Pacific Conference on Aerospace Technology and Science, 2002.01.
35. K. Kakimoto, Effects of rotating magnetic fields on temperature and oxygen distributions in silicon melt, Journal of Crystal Growth 237-239, 237, pp1785-1790, 2002.01.
36. 柿本浩一、野口真一郎、尾添紘之, 分子動力学法による半導体中の欠陥の拡散挙動解析, 日本機械学会熱工学講演会論文集, N0.01-9, 2001.11.
37. Koichi Kakimoto, Oxygen distribution in silicon melt under inhomogeneous transverse-magnetic fields, Proceedings of the fifth symposium on atomic-scale surface and interface dynamics, No. 12, March 1-2, pp.145-150, 2001.03.
38. Yuren Wang and Koichi Kakimoto, Dislocations and crystal-melt interface in the melting prosesses of silicon, Proceedings of the fifth symposium on atomic-scale surface and interface dynamics, No. 12, March 1-2, pp.133-140, 2001.03.
39. K. Sato, Y. Furukawa and K. Nakajima,Koichi KAKIMOTO, Si bulk crystal growth: What and how?, Advances in Crystal Growth Research, pp155-166, 2001.01.
40. K. KAKIMOTO, Oxygen distributions in silicon melt under inhomogeneous transverse-magnetic fields, Journal of Crystal Growth 230, 230, 1-2, pp100-107, 2001.01.
41. Yuren Wang, Koichi Kakimoto, Dislocation and Crystal-melt Interface In the Melting Processes of Silicon, Proceedings of the Fifth Symposium on Atomic-scale Surface and Dynamics, pp133-140, 2001.01.
42. Yuren Wang, Koichi Kakimoto, An in-situ observation of dislocation and crystal-melt interface during the melting silicon, Solid State Phenomena, 78-79, Vols.78-79, pp217-224, 2001.01.
43. Yuren Wang and Koichi Kakimoto, Dislocation effect on crystal-melt interface: an in situ observation of the melting of silicon, J. of Crystal Growth, 208, 1-4, Vol.208, pp.303-312, 2000.12.
44. Koichi Kakimoto, Oxygen distribution in silicon melt under inhomogeneous transverse magnetic fields, Third International Workshop on Modeling in Crystal Growth, 230, 1-2, pp.181-200, 2000.11.
45. Koichi Kakimoto, Atomic and macroscale simulation of transport phenomena during crystal growth, 2000 IAMS International Seminar on Thermal Design and Management for Electronic Equipment and Material, pp.130-137, 2000.10.
46. Janusz S. Szmyd, M. Jaszczur, H. Ozoe and K. Kakimoto, Numerical analysis of buoyancy driven convection and radiation from the free surface of the fluid in a vertical cylinder, 3rd European Thermal Sciences Conference, Heidelberg, Germany, 2000.09.
47. Koichi Kakimoto Takeshi Umehara and Hiroyuki Ozoe, Molecular dynamics analysis of point defects in silicon near solid-liquid interface, Applied Surface Science, 159, pp. 387-391, 2000.09.
48. Koichi Kakimoto, Heat and mass transfer in Czochralski silicon crystal growth under magnetic fields, 20th International Congress of Theoretical and Applied Mechanics, 2000.08.
49. Koichi Kakimoto, Heat and mass transfer during CZ crystal growth : From atomic scale to macro scale, Second International School on Crystal Growth Technology, pp.122-144, 2000.08.
50. Hiroyuki Ozoe, Koichi Kakimoto, Masato Akamatsu and Yoo Cheol Won, Application of various magnetic fields for the melt in a Czochralski
crystal growing system, 20th International Congress of Theoretical and Applied Mechanics, 2000.08.
51. Koichi Kakimoto and Hiroyuki Ozoe, Oxygen distribution at a solid-liquid interface of silicon under transverse magnetic fields, J. of Crystal Growth, 212, 3-4, Vol. 212, Nos. 3/4, pp.429-437, 2000.06.
52. Koichi Kakimoto, Molecular dynamics analysis on diffusion of point defects, Journal of Crystal Growth, 210, 1-3, 2000.04.
53. Yuren Wang and Koichi Kakimoto, The shape of solid-melt interface estimated from in-situ X-ray topograph observation, Proceedings of the Fourth Symposium on Atomic-scale Surface and Interface Dynamics, pp.95-100, 2000.03.
54. Yoo Cheol Won, Koichi Kakimoto and Hiroyuki Ozoe, Crucible and crystal rotation effects on oxygen distribution at an interface between solid and liquid of silicon under transverse magnetic fields, Proceedings of the Fourth Symposium on Atomic-scale Surface and Interface Dynamics, pp.89-94, 2000.03.
55. JS. Szmyd, M. Jaszczur, H. Ozoe and K. Kakimoto, An analysis of natural convection with radiation from the free surface of the fluid in a vertical cylinder, JSME International Journal Series B-Fluids and Thermal Engineering, 43, 4, Vol. 43,pp679-685,, 2000.01.
56. Yoo Cheol Won, Koichi Kakimoto and Hiroyuki Ozoe, Transient three-dimensional flow characteristics of Si melt in a cusp-shaped magnetic field, Numerical Heat Transfer, 36, 6, Part A, Vol.36, No.6, pp.551-561, 1999.12.
57. M. Watanabe, K. W. Yi, T. Hibiya and K. Kakimoto, Direct observation and numerical simulation of molten silicon flow during crystal growth under magnetic fields by X-ray radiography, Progress in Crystal Growth and Characterization of Materials, 38, 1-4, Vol.38, No. 1-4, pp.215-238, 1999, 1999.12.
58. Koichi Kakimoto, Macroscopic and microscopic mass transfer in silicon Czochralski method, Korean Association of Crystal Growth, Vol.9, No. 4, pp.381-383, 1999.12.
59. Transport Mechanism of Point Defects in Silicon Crystals estimated by Molecular Dynamics.
60. Yuren Wang and Koichi Kakimoto, The dislocation behaviour in the vicinity of molten zone : An X-ray topography study of the melting of silicon, Eleventh American Conference on Crystal Growth & Epitaxy(ACCGE-11),, p. 106, 1999.08.
61. Koichi Kakimoto, Shin Kikuchi and Hiroyuki Ozoe, Molecular dynamics simulation of oxygen in silicon melt, Journal of Crystal Growth, 198, Vol.198/199, Part 1, pp.114-119, 1999.05.
62. Koichi Kakimoto, Melt flow in Czochralski crystal growth system From macro to micro- Crystal Growth Meeting Germany-Japan-Poland, the Institute of Crystal Growth (IKZ) in Berlin, p24, 1999.04.
63. Yoo Cheol Won, Koichi Kakimoto and Hiroyuki Ozoe, Transient three-dimensional numerical computation for silicon melt under a cusp-shaped magnetic field, 5th ASME/JSME Joint Thermal Eng. Conf, 1999.03.
64. Masato Akamatsu, Hiroyuki Ozoe, Koichi Kakimoto and Tsuguo Fukuda, One-sided natural and mixed convection computed for liquid metal in a Czochralski configuration, 5th ASME/JSME Joint Thermal Eng. Conf, 1999.03.
65. S. Nakamura, T. Hibiya, K. Kakimoto, N. Imaishi, S. Nishizawa, A. Hirata,, Temperature fluctuations of the Marangoni flow in a liquid bridge of molten silicon under microgravity on board the TR1-A-4 rocket, J. Crystal Growth, 186, 1-2, Vol.186, pp.85-94, 1998.12.
66. Yoji Yamanaka, Koichi Kakimoto, Hiroyuki Ozoe, Stuart W. Churchill, Rayleigh-Benard oscillatory natural convection of liquid gallium heated from below, The Chemical Engineering Journal, 71, 3, Vol.71, pp.201-205, 1998.12.
67. Xiaobo Wu, Koichi Kakimoto, Hiroyuki Ozoe and Zengyue Guo, Numerical study of natural convection in Czochralski crystallization, The Chemical Engineering Journal, 71, 3, Vol.71, pp.183-189, 1998.12.
68. Yoo Cheol Won, Koichi Kakimoto and Hiroyuki Ozoe, Visualization of the heat and mass transfer as well as the melt convection under a cusp-shaped magnetic field, The Eleventh Symposium on Chemical Engineering, Kyushu-Taejon/Chungnam, pp.327-328, 1998.10.
69. Koichi Kakimoto, Heat and mass transfer in silicon melt under magnetic fields, First International School on Crystal Growth Technology, pp.172-186, 1998.10.
70. Masato Akamatsu, Koichi Kakimoto and Hiroyuki Ozoe, Numerical calculation of natural and mixed convection in a Czochralski crucible under transverse magnetic fields Heat Transfer 1998, Proceedings of 11th IHTC, Vol.3, pp.239-244, 1998.08.
71. Physical properties of silicon estimated by molecular dynamics under a condition of constant temperature and pressure.
72. Hideto Fukui, Koichi Kakimoto and Hiroyuki Ozoe, The convection under an axial magnetic field in a Czochralski configuration
Advanced Computational Methods in Heat Transfer, Heat Transfer V, pp.135-144, 1998.06.
73. Koichi Kakimoto and Hiroyuki Ozoe, Segregation of Oxygen at a solid/liquid interface in silicon, J. Electrochem, 145, 5, Vol.145, No.5, May, pp.1692-1695, 1998.05.
74. Masato Akamatsu, Koichi Kakimoto and Hiroyuki Ozoe, Numerical computation for the secondary convection in a Czochralski
crystal growing system with a rotating crucible and astatic crystal rod, Journal of Materials Processing & Manufacturing Science, 5, 4, Vol.5, No.4, pp.329-348, 1998.04.
75. Yoo Cheol Won, Koichi Kakimoto and Hiroyuki Ozoe, Transient analysis of melt flow under inhomogeneous magnetic fields, The Second Symposium on Atomic-scale Surface and Interface Dynamics, pp.57-62, 1998.02.
76. Koichi Kakimoto, Shin Kikuchi and Hiroyuki Ozoe, Molecular dynamics simulation of oxygen in silicon melt, The Second Symposium on Atomic-scale Surface and Interface Dynamics, pp.85-90, 1998.02.
77. Koichi Kakimoto and Hiroyuki Ozoe, Heat and mass transfer during crystal growth, Computational Materials Science 10, 10, 1-4, pp.127-133(招待講演), 1998.01.
Awards
  • This prize is for contribution to internationl relationship of JACG.
  • 学外
  • 学外