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Researcher information
Yoshihiro KANGAWA Last modified date：2013.5.11

Associate Professor / Division of Renewable Energy Dynamics
Research Institute for Applied Mechanics


Graduate School
Department of Aeronautics and Astronautics
Graduate School of Engineering


E-Mail
Homepage
[URL]
URL of our research group.
Academic Degree
Dr. Engineering
Field of Specialization
Crystal Growth of semiconductor
Outline Activities
1) Liquid/Vapor phase epitaxy of III-nitride alloys, 2) ab initio calculations, empirical interatomic potential calculations, and thermodynamic calculations for surface reactions during vapor phase epitaxy of III-nitrides, and 3) structural analyses using transmission electron microscopy, scanning electron microscopy, X-ray diffraction, etc.
Research
Research Interests
  • AlN growth using Li-Al-N solvent
    keyword : Solution growth, Chemical reaction, AlN
    2006.04.
  • Control of composition of GaNAs for multi-junction solar cell
    keyword : multi-junction solar cell, control of composition, GaNAs
    2008.10.
  • Growth mechanisms of graphene on vicinal SiC
    keyword : Graphene
    2009.04.
  • Investigation of growth mechanisms of cubic-GaN
    keyword : cubic GaN、ab initio calculation、free energy of vapor phase
    2005.01.
  • Control of composition of coherently grown InGaN thin films
    keyword : InGaN, lattice constraint, compositional instability
    2000.04.
Current and Past Project
  • Theoretical approach to the growth mechanisms of graphene on vicinal SiC.
Academic Activities
Books
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1. Yoshihiro Kangawa ほか171名　（編集者：P. Bhattacharya, R. Fornari, H. Kamimura）

,Comprehensive Semiconductor Science and Technology (SEST),Elsevier,2011.03
[URL].
Reports
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Papers
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1. Yoshihiro Kangawa, Noriyuki Kuwano, Boris M. Epelbaum and Koichi Kakimoto,Microstructure of Bulk AlN Grown by A New Solution Growth Method,Jpn. J. Appl. Phys.,Vol.50,pp.120202,2011.12.
2. Yoshihiro KANGAWA,Novel solution growth method of bulk AlN using Al and Li3N solid sources,Appl. Phys. Express,Vol.4,2011.08.
3. Y. Kangawa, K. Kakimoto ,Possibility of AlN growth using Li-Al-N solvent,J. Cryst. Growth,Vol.312,No.18,pp.2569-2573,2010.09.
4. Y. Kangawa, T. Nagano, K. Kakimoto ,Possibility of AlN vapor phase epitaxy using Li3N as a nitrogen source,Phys. Stat. Solidi (c),Vol.6,No.0,pp.S340-S343,2009.06.
5. Y. Kangawa, T. Akiyama, T. Ito, K. Shiraishi, K. Kakimoto ,Theoretical approach to structural stability of GaN: How to grow cubic GaN ,J. Cryst. Growth,Vol.311,No.10,pp.3106-3109,2009.05.
6. Yoshihiro Kangawa, , Koichi Kakimoto, Tomonori Ito, Akinori Koukitu,Monte Carlosimulation of atomic arrangement in InGaN thin film grown by MOVPE,J. Cryst. Growth,Vol.311,No.3,pp.463-465,2009.01.
7. Tatsuhito Wakigawa, Toshihiko Nagano, Yoshihiro Kangawa, Koichi Kakimoto,Synthesis of AlN from Li3N and Al: Application to Vapor Phase Epitaxy,J. Cryst. Growth,vol. 310, p. 2827,2008.05.
8. Yoshihiro KANGAWA, Tatsuhito WAKIGAWA and Koichi KAKIMOTO ,Possibility of AlN Solution Growth Using Al and Li3N,Jpn. J. Appl. Phys.,vol. 46, p. 5785,2007.09.
9. Y. Kangawa, K. Kakimoto, T. Ito, and A. Koukitu,Numerical study of the relationship between growth condition and atomic arrangement of InGaN,phys. stat. sol. (b),vol.244, p.1784,2007.06.
10. Y. Kangawa, Y. Matsuo, T. Akiyama, T. Ito, K. Shiraishi and K. Kakimoto,Ab initio-based approach on initial growth kinetics of GaN on GaN(001),J. Cryst. Growth,vol.301-302, p.75,2007.04.
11. Y. Kangawa, Y. Matsuo, T. Akiyama, T. Ito, K. Shiraishi, K. Kakimoto,Theoretical approach to initial growth kinetics of GaN on GaN(001),J. Cryst. Growth,Vol. 300, 62-65, 2007,2007.03.
12. Yoshihiro Kangawa, Koichi Kakimoto, Tomonori Ito, Akinori Koukitu,Analysis of compositional instability of InGaN by Monte Carlo simulation,J. Cryst. Growth,vol.298, p.190,2007.01.
13. Yoshihiro Kangawa, Koichi Kakimoto, Tomonori Ito, Akinori Koukitu,Analysis of compositional instability of InGaN by Monte Carlo simulation,J. Cryst. Growth,Vol. 298, 190-192, 2007,2007.01.
14. Yoshihiro Kangawa, Koichi Kakimoto, Tomonori Ito, and Akinori Koukitu,Thermodynamic stability of In1-x-yGaxAlyN on GaN and InN,Phys Stat Sol (c),3, No 6, 1700-1703, 2006,2006.06.
Membership in Academic Society
  • The Japan Society of Applied Physics
  • The Japan Society of Applied Physics
  • The Japanese Association for Crystal Growth
  • The Japanese Association for Crystal Growth
  • The Japanese Association for Crystal Growth
  • The Japan Society for Aeronautical and Space Science
Educational
Educational Activities
I eudcate doctor and master cource students for having both experimental and theoretical analizing skill to investigate physical phenomena. Moreover, I have classes for undergraduate students.
Social
Professional and Outreach Activities
Organization Committee of Nitride Semiconductors Foundation / Member


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