Kyushu University Academic Staff Educational and Research Activities Database
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Yoshihiro KANGAWA Last modified date:2018.02.07

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Undergraduate School
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URL of our research group .
Academic Degree
Dr. Engineering
Field of Specialization
Crystal Growth of semiconductor
Outline Activities
1) Liquid/Vapor phase epitaxy of III-nitride alloys, 2) ab initio calculations, empirical interatomic potential calculations, and thermodynamic calculations for surface reactions during vapor phase epitaxy of III-nitrides, and 3) structural analyses using transmission electron microscopy, scanning electron microscopy, X-ray diffraction, etc.
Research Interests
  • Control of composition of GaNAs for multi-junction solar cell
    keyword : multi-junction solar cell, control of composition, GaNAs
  • Solid source solution growth (3SG) of bulk AlN
    keyword : Solution growth, AlN
  • Surface phase diagram of InN grown by pressurized reactor MOVPE: An ab initio based-approach
    keyword : cubic InN、ab initio calculation、free energy of vapor phase
  • Growth mechanisms of graphene on vicinal SiC
    keyword : Graphene
  • Investigation of growth mechanisms of cubic-GaN
    keyword : cubic GaN、ab initio calculation、free energy of vapor phase
  • Control of composition of coherently grown InGaN thin films
    keyword : InGaN, lattice constraint, compositional instability
    2000.04~2014.03Homogeneous InGaN films with large indium mole fraction are difficult to grow because of their compositionally unstable nature. In order to understand the compositionally unstable nature of InGaN, I carried out thermodynamic analyses and empirical interatomic potential calculations. Moreover, I investigate the influence of lattice constraint from substrates on compositionally unstable nature of the alloy..
Academic Activities
1. Y. Kangawa, Chapter 5: Thermodynamic approach to InN epitaxy, Chapter 6: Atomic arrangement and In composition in InGaN quantum wells, in T. Matsuoka and Y. Kangawa (eds), Computational Approach to Epitaxial Growth of III-Nitride Compounds, Springer International Publishing AG, 2017.07.
2. T. Ito, Y. Kangawa, 11 – Ab initio-Based Approach to Crystal Growth: Chemical Potential Analysis, Elsevier, In T. Nishinaga (ed.), Handbook of Crystal Growth, 2nd Edition, Vol. 1A; Fundamentals, pp. 477-520, 2014.12.
3. T. Nakayama, Y. Kangawa, K. Shiraishi, 1.04 Atomic Structures and Electronic Properties of Semiconductor Interfaces, Elsevier, In P. Bhattacharya, R. Fornari, H. Kamimura (eds.), Comprehensive Semiconductor Science and Technology (SEST), 1, pp. 113-174, 2011.03, [URL].
1. P. Kempisty, Y. Kangawa, A. Kusaba, K. Shiraishi, S. Krukowski, M. Bockowski, K. Kakimoto, H. Amano, DFT modeling of carbon incorporation in GaN(0001) and GaN(000-1) metalorganic vapor phase epitaxy, APPLIED PHYSICS LETTERS, DOI: 10.1063/1.4991608, 111, 14, 141602-1-5, 2017.10.
2. Y. Kangawa, H. Suetsugu, M. Knetzger, E. Meissner, K. Hazu, S. F. Chichibu, T. Kajiwara, S. Tanaka, Y. Iwasaki, K. Kakimoto, Structural and optical properties of AlN grown by solid source solution growth method, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.7567/JJAP.54.085501, 54, 8, 085501-1-5, 2015.08.
3. Y. Kangawa, A. Kusaba, H. Sumiyoshi, H. Miyake, M. Bockowski, K. Kakimoto, Real-time observation system development for high-temperature liquid/solid interfaces and its application to solid-source solution growth of AlN, APPLIED PHYSICS EXPRESS, 10.7567/APEX.8.065601, 8, 6, 065601-1-3, 2015.06.
4. Y. Kangawa, T. Ito, A. Koukitu, K. Kakimoto, Progress in theoretical approach to InGaN and InN epitaxy: In incorporation efficiency and structural stability, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.7567/JJAP.53.100202, 53, 10, 100202-1-11, 2014.10.
5. Yoshihiro KANGAWA, Toru Akiyama, Tomonori Ito, Kenji Shiraishi, Takashi Nakayama, Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach, MATERIALS, 10.3390/ma6083309, 6, 8, 3309-3360, 2013.08, [URL], We review the surface stability and growth kinetics of III-V and III-nitride semiconductors. The theoretical approach used in these studies is based on ab initio calculations and includes gas-phase free energy. With this method, we can investigate the influence of growth conditions, such as partial pressure and temperature, on the surface stability and growth kinetics. First, we examine the feasibility of this approach by comparing calculated surface phase diagrams of GaAs(001) with experimental results. In addition, the Ga diffusion length on GaAs(001) during molecular beam epitaxy is discussed. Next, this approach is systematically applied to the reconstruction, adsorption and incorporation on various nitride semiconductor surfaces. The calculated results for nitride semiconductor surface reconstructions with polar, nonpolar, and semipolar orientations suggest that adlayer reconstructions generally appear on the polar and the semipolar surfaces. However, the stable ideal surface without adsorption is found on the nonpolar surfaces because the ideal surface satisfies the electron counting rule. Finally, the stability of hydrogen and the incorporation mechanisms of Mg and C during metalorganic vapor phase epitaxy are discussed..
6. Yoshihiro KANGAWA, Ryutaro Toki, Tomoe Yayama, Boris M. Epelbaum, Koichi Kakimoto, Novel Solution Growth Method of Bulk AlN Using Al and Li3N Solid Sources, APPLIED PHYSICS EXPRESS, 10.1143/APEX.4.095501, 4, 9, 095501-1-095501-3, 2011.09, 窒化アルミニウムは深紫外LEDやパワーデバイス用の材料として期待されている。しかし、そのバルク成長技術は開発途上にある。本研究では、固体ソース溶液成長技術を開発し、窒化アルミニウムのバルク成長に適用した。新規溶液成長技術により、従来の窒素ガスを窒素原料とする低温溶液成長技術に比べ約2倍の成長速度を達成することに成功した。また、得られた窒化アルミニウム単結晶に含まれる貫通転位密度はハライド気相成長法により作製した単結晶と同程度であり、高品質結晶の成長が確認された。以上より、本研究で開発した固体ソース溶液成長技術の適用可能性が示唆された。.
1. Y. Kangawa, Ab Initio-Based Approach to Crystal Growth of Nitride Semiconductors: Contribution of Growth Orientation and Surface Reconstruction, International Workshop on Nitride Semiconductors 2016, 2016.10.
2. Y. Kangawa, H. Miyake, M. Bockowski, K. Kakimoto, Development of in situ observation system for liquid/solid interface during solution growth of AlN, Workshop on Ultra-Precision Processing for Wide Bandgap Semiconductors (WUPP2015), 2015.08.
3. Y. Kangawa, K. Kakimoto, Theoretical aspects in growth of In-rich InGaN, SPIE 2015 Photonics West, 2015.02.
4. Y. Kangawa, S. Nagata, K. Kakimoto, Microstructure of AlN/AlN(0001) grown by solid-source solution growth (3SG) method, 8th International Workshop on Bulk Nitride Semiconductors (IWBNS-VIII), 2013.10.
5. Y. Kangawa, Influence of substrate orientation on In incorporation efficiency of InGaN grown by MOVPE -Theoretical approach on growth process/kinetics of InGaN-, 16th International Conference on MetalOrganic Vapor Phase Epitaxy (ICMOVPE-16), 2012.05.
Membership in Academic Society
  • The Japan Society of Applied Physics
  • The Japan Society of Applied Physics
  • The Japanese Association for Crystal Growth
  • The Japanese Association for Crystal Growth
  • The Japanese Association for Crystal Growth
  • The Japan Society for Aeronautical and Space Science
Educational Activities
I also hold an appointment in the Department of Aeronautics and Astronautics. I teach courses on the mechanics and thermodynamics. I educate DC and MC students to develop their ability to perform the both experimental and theoretical research.
Other Educational Activities
  • 2016.03.
  • 2015.11.
  • 2015.09.
  • 2015.05.
  • 2012.07.
  • 2011.11.
  • 2011.11.
  • 2011.07.
  • 2011.04.
  • 2010.06.
Professional and Outreach Activities
I was appointed to editors of international journal and Japanese journal, members of program committees and organizing committees of international conferences and domestic conferences. I collaborate with researchers in Germany, Poland and USA. .