Kyushu University Academic Staff Educational and Research Activities Database
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Yoshihiro KANGAWA Last modified date:2017.09.20



Graduate School
Other Organization


E-Mail
Homepage
http://www.riam.kyushu-u.ac.jp/reme/
URL of our research group .
Academic Degree
Dr. Engineering
Field of Specialization
Crystal Growth of semiconductor
Outline Activities
1) Liquid/Vapor phase epitaxy of III-nitride alloys, 2) ab initio calculations, empirical interatomic potential calculations, and thermodynamic calculations for surface reactions during vapor phase epitaxy of III-nitrides, and 3) structural analyses using transmission electron microscopy, scanning electron microscopy, X-ray diffraction, etc.
Research
Research Interests
  • Control of composition of GaNAs for multi-junction solar cell
    keyword : multi-junction solar cell, control of composition, GaNAs
    2008.10.
  • Solid source solution growth (3SG) of bulk AlN
    keyword : Solution growth, AlN
    2006.04.
  • Surface phase diagram of InN grown by pressurized reactor MOVPE: An ab initio based-approach
    keyword : cubic InN、ab initio calculation、free energy of vapor phase
    2012.04.
  • Growth mechanisms of graphene on vicinal SiC
    keyword : Graphene
    2009.04.
  • Investigation of growth mechanisms of cubic-GaN
    keyword : cubic GaN、ab initio calculation、free energy of vapor phase
    2005.01~2014.03.
  • Control of composition of coherently grown InGaN thin films
    keyword : InGaN, lattice constraint, compositional instability
    2000.04~2014.03Homogeneous InGaN films with large indium mole fraction are difficult to grow because of their compositionally unstable nature. In order to understand the compositionally unstable nature of InGaN, I carried out thermodynamic analyses and empirical interatomic potential calculations. Moreover, I investigate the influence of lattice constraint from substrates on compositionally unstable nature of the alloy..
Academic Activities
Books
1. Y. Kangawa, Chapter 5: Thermodynamic approach to InN epitaxy, Chapter 6: Atomic arrangement and In composition in InGaN quantum wells, in T. Matsuoka and Y. Kangawa (eds), Computational Approach to Epitaxial Growth of III-Nitride Compounds, Springer International Publishing AG, 2017.07.
2. T. Ito, Y. Kangawa, 11 – Ab initio-Based Approach to Crystal Growth: Chemical Potential Analysis, Elsevier, In T. Nishinaga (ed.), Handbook of Crystal Growth, 2nd Edition, Vol. 1A; Fundamentals, pp. 477-520, 2014.12.
3. T. Nakayama, Y. Kangawa, K. Shiraishi, 1.04 Atomic Structures and Electronic Properties of Semiconductor Interfaces, Elsevier, In P. Bhattacharya, R. Fornari, H. Kamimura (eds.), Comprehensive Semiconductor Science and Technology (SEST), 1, pp. 113-174, 2011.03, [URL].
Papers
1. Y. Kangawa, H. Suetsugu, M. Knetzger, E. Meissner, K. Hazu, S. F. Chichibu, T. Kajiwara, S. Tanaka, Y. Iwasaki, K. Kakimoto, Structural and optical properties of AlN grown by solid source solution growth method, JAPANESE JOURNAL OF APPLIED PHYSICS, 54, 8, 2015.08.
2. Y. Kangawa, A. Kusaba, H. Sumiyoshi, H. Miyake, M. Bockowski, K. Kakimoto, Real-time observation system development for high-temperature liquid/solid interfaces and its application to solid-source solution growth of AlN, APPLIED PHYSICS EXPRESS, 8, 6, 2015.06.
3. Y. Kangawa, T. Ito, A. Koukitu, K. Kakimoto, Progress in theoretical approach to InGaN and InN epitaxy: In incorporation efficiency and structural stability, JAPANESE JOURNAL OF APPLIED PHYSICS, 53, 10, 2014.10.
4. Yoshihiro KANGAWA, Toru Akiyama, Tomonori Ito, Kenji Shiraishi, Takashi Nakayama, Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach, MATERIALS, 6, 8, 3309-3360, 2013.08, [URL].
5. Yoshihiro KANGAWA, Ryutaro Toki, Tomoe Yayama, Boris M. Epelbaum, Koichi Kakimoto, Novel Solution Growth Method of Bulk AlN Using Al and Li3N Solid Sources, APPLIED PHYSICS EXPRESS, 4, 9, 2011.09.
Presentations
1. Y. Kangawa, Ab Initio-Based Approach to Crystal Growth of Nitride Semiconductors: Contribution of Growth Orientation and Surface Reconstruction, International Workshop on Nitride Semiconductors 2016, 2016.10.03.
2. Y. Kangawa, H. Miyake, M. Bockowski, K. Kakimoto, Development of in situ observation system for liquid/solid interface during solution growth of AlN, Workshop on Ultra-Precision Processing for Wide Bandgap Semiconductors (WUPP2015), 2015.08.20.
3. Y. Kangawa, K. Kakimoto, Theoretical aspects in growth of In-rich InGaN, SPIE 2015 Photonics West, 2015.02.09.
4. Y. Kangawa, S. Nagata, K. Kakimoto, Microstructure of AlN/AlN(0001) grown by solid-source solution growth (3SG) method, 8th International Workshop on Bulk Nitride Semiconductors (IWBNS-VIII), 2013.10.01.
5. Y. Kangawa, Influence of substrate orientation on In incorporation efficiency of InGaN grown by MOVPE -Theoretical approach on growth process/kinetics of InGaN-, 16th International Conference on MetalOrganic Vapor Phase Epitaxy (ICMOVPE-16), 2012.05.23.
Membership in Academic Society
  • The Japan Society of Applied Physics
  • The Japan Society of Applied Physics
  • The Japanese Association for Crystal Growth
  • The Japanese Association for Crystal Growth
  • The Japanese Association for Crystal Growth
  • The Japan Society for Aeronautical and Space Science
Educational
Other Educational Activities
  • 2016.03.
  • 2015.11.
  • 2015.09.
  • 2015.05.
  • 2012.07.
  • 2011.11.
  • 2011.11.
  • 2011.07.
  • 2011.04.
  • 2010.06.
Social
Professional and Outreach Activities
I was appointed to editors of international journal and Japanese journal, members of program committees and organizing committees of international conferences and domestic conferences. I collaborate with researchers in Germany, Poland and USA. .