Kyushu University Academic Staff Educational and Research Activities Database
List of Papers
Asano Tanemasa Last modified date:2019.04.19

Post-doctoral Fellow / Department of Electronics / Center for Japan-Egypt Cooperation in Science and Technology(E-JUST Center)


Papers
1. Hsiang Fang Sun, Akihiro Ikeda, Tanemasa Asano, Evaluation of effective length of the enhanced oxidation of active oxygen produced using SrTixMg1-xO3-δ catalyst for low-temperature oxidation, Japanese Journal of Applied Physics, 10.7567/JJAP.57.04FB09, 57, 4, 2018.04, Thermal oxidation using the SrTixMg1-xO3-δ catalyst to produce oxygen atoms in a furnace is investigated to determine the effective length of the enhanced oxidation of atomic oxygen. An experimental study was carried out by placing the catalyst material at the side of a Si wafer in a furnace and measuring the thickness of silicon dioxide. The activation energy of linear rate constant in the Deal-Grove model was found to decrease with decreasing distance from the catalyst. The thickness distribution was found to be fitted by the Gaussian distribution, which gave us the effective length of atomic oxygen up to 24mm..
2. Akihiro Ikeda, Daichi Marui, Rikuho Sumina, Hiroshi Ikenoue, Tanemasa Asano, Increased doping depth of Al in wet-chemical laser doping of 4H-SiC by expanding laser pulse, Materials Science in Semiconductor Processing, 10.1016/j.mssp.2016.11.036, 70, 193-196, 2017.11, Al is doped into 4H-SiC by irradiating pulsed KrF excimer laser to 4H-SiC immersed in AlCl3 aqueous solution. Impact on doping depth of the use of expanded laser-pulse width is investigated. Expanded laser pulse is produced by splitting and recombining the laser beam with mirrors. The laser pulse width was expanded from its original width of 55–100 ns, while the peak power of the expanded pulse is as half as that of the original pulse under the same laser fluence. Multiple shots of the expanded laser pulses increased the doping depth at the Al concentration of 1×1016 /cm3 to 100 nm from 30 nm of the single shot of the original short, high-peak power laser. The increased doping depth could be due to enhanced diffusion by extra vacancies generated by the repeated laser irradiations. Due to the smaller laser peak power, the expanded pulse laser can suppress damage generation under multiple laser shots and, as a result, leakage current of the pn junction diode is kept low..
3. Keiichiro Iwanabe, Kenichi Nakadozono, Mamoru Sakamoto, Tanemasa Asano, Dynamic Strain of Ultrasonic Cu and Au Ball Bonding Measured In-Situ by Using Silicon Piezoresistive Sensor, Proceedings - IEEE 67th Electronic Components and Technology Conference, ECTC 2017, 10.1109/ECTC.2017.316, 1786-1792, 2017.08, Dynamic changes in distribution of mechanical strain generated during wire bonding in Si under and near the bonding pad were measured by using a piezoresistive linear array sensor. The sensor was designed to be able to determine strains in the directions normal and parallel to the surface. Bonding dynamics of Cu and Au balls were investigated. We can clearly observe the oscillating strain according to the application of 150 kHz ultrasonic vibration. It was also clearly observed that the position of the largest compressive strain moved from the center of the ball to the periphery according to the progress of bonding under the application of the ultrasonic vibration. Bonding of Cu was found to generate larger strain than bonding of Au. A large oscillating tensile strain generated at the periphery of Cu ball when ultrasonic amplitude is increased is found to cause fracture of Si. The largest residual strain is observed for Cu bonding at the location where the end of capillary tool was present during bonding..
4. Ryo Takigawa, Hiroki Kawano, Hiroshi Ikenoue, Tanemasa Asano, Investigation of the interface between LiNbO3 and Si wafers bonded by laser irradiation, Japanese Journal of Applied Physics, 10.7567/JJAP.56.088002, 56, 8, 2017.08, This paper focuses on the bonding interface of LiNbO3 and Si wafers bonded by laser irradiation. The nanostructure and composite distribution across the bonding interface were investigated. The experimental interface analysis showed that no cracks or voids were formed at the nanolevel. It was also found that the bonding interface had a disordered amorphous layer containing Nb, O, and Si. This indicates that a strong bond was achieved because fusion bonding proceeded at the interface between LiNbO3 and Si. In addition, the effectiveness of this bonding method for the wafer-level bonding of LiNbO3 and Si was demonstrated..
5. Eiji Kume, Hiroyuki Ishii, Hiroyuki Hattori, Wen Hsin Chang, Mutsuo Ogura, Haruichi Kanaya, Tanemasa Asano, Tatsuro Maeda, InAs MOS-HEMT power detector for 1.0 THz on quartz glass, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings, 10.1109/EDTM.2017.7947562, 196-197, 2017.06, Terahertz wave was detected in 1.0 THz using InAs MOS-HEMT as a non-biased (cold) FET power detector at room temperature. Terahertz power detector was fabricated on quartz glass substrate by direct-wafer-bonding technique. 1.0 THz signal power was directly input to the gate terminal with drain coupling in MOS-HEMT detector through the GSG THz probe. The high responsivity of around 60 V/W was achieved at the bias voltage of -0.4 V..
6. Ryo Takigawa, Eiji Higurashi, Tanemasa Asano, Surface activated wafer bonding of LiNbO3 and SiO2/Si for LNOI on Si, Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017, 10.23919/LTB-3D.2017.7947443, 47, 2017.06, Wafer-level bonding of LiNbO3 (LN) and Si with thermally grown SiO2 layer is demonstrated using surface-activated bonding method for the realization of LiNbO3-on-Insulator (LNOI) on Si..
7. Li Li, Akihiro Ikeda, Tanemasa Asano, Enhanced low-temperature oxidation of 4H-SiC using SrTi1-xMgxO3-δ, Materials Science Forum, 10.4028/www.scientific.net/MSF.897.356, 897 MSF, 356-359, 2017.04, SrTi1-xMgxO3-δ, an oxidation catalyst, is employed to produce active oxygen species in an oxidation furnace and to enhance oxidation of 4H-SiC at low temperatures. The linear rate constant of the oxidation model at the 4H-SiC (0001)-Si surface at 800~900 °C is enhanced by two orders of magnitude in comparison to the conventional dry oxidation. The catalytic oxidation is, therefore, able to form a gate oxide at temperatures as low as 800°C. Interface state density in the energy range of 0.2~0.5 eV from the conduction band edge of the 4H-SiC oxidized with catalyst at 800°C is almost same as the one oxidized using the conventional dry oxidation at 1100 °C..
8. T. Tsuchiya, A. Suwa, A. Ikeda, Daisuke Nakamura, Tanemasa Asano, Hiroshi Ikenoue, Damage free al doping on 4H-SiC with passivation films Using XeF excimer laser irradiation in AlCl3 acid solution, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXII 2017, 10.1117/12.2250712, 10091, 2017.01, We propose an innovative method for aluminum doping of 4H-SiC with passivation films, induced by XeF excimer laser irradiation in AlCl3 aqueous solution (28.6 wt%). A 100-nm thick Si passivation film was deposited on an n-type 4H-SiC substrate by physical vapor deposition. Using a laser beam (200 μm × 170 μm) with an irradiation fluence of 0.5.5.0 J/cm2, 1.300 shots were administered. After laser irradiation of 1.0 J/cm2 and 300 shots, an Al-Si-O compound film was formed on the SiC surface. The compound film was removed by chemical wet etching and plasma treatment. After the removal of the compound film, no irradiation damage was observed on the SiC surface. From the results of secondary ion mass spectrometry measurements, high concentration aluminum doping (about 1 × 1020/cm3 at the surface) was confirmed. The I-V characteristics of the junction between the n-type substrate and the irradiation area indicated clear rectification with a large on/off ratio of 9 decades in the range of ±10 V. When forward biased, electroluminescence phenomenon with a peak at 387 nm, corresponding to the electroluminescence of SiC's band gap, was confirmed. These results prove the achievement of Al doping of n-type SiC to p-type using laser irradiation without any damage to the SiC surface..
9. Akihiro Ikeda, Rikuho Sumina, Hiroshi Ikenoue, Tanemasa Asano, Increased doping depth of Al in wet-chemical laser doping of 4H-SiC by expanding laser pulse, Materials Science in Semiconductor Processing, https://doi.org/10.1016/j.mssp.2016.11.036, 2016.12.
10. Keiichiro Iwanabe, Kenichi Nakadozono, Yosuke Senda, Tanemasa Asano, In-situ strain measurement of ultrasonic ball bonding, 2016 6th Electronic System-Integration Technology Conference, ESTC 2016, 10.1109/ESTC.2016.7764689, 2016.12, Dynamic change in distribution of strain generated in Si under a pad electrode was measured during ultrasonic ball bonding by using newly developed Si strain sensor. The sensor was designed to be able to determine strains in the directions normal and parallel to the surface. Bonding of Cu and Au was measured. It was clearly observed that the position of the largest compressive strain moved from the center of the ball to the periphery according to the progress of bonding under the application of the ultrasonic. Bonding of Cu was found to generate larger strain than bonding of Au. Bonding of Cu was also found to induce under-pad damage. SEM observation of bonded balls suggested that the under-pad damage appeared at the positon where the edge of the capillary existed and at the time when the large force of ultrasonic vibration was applied..
11. Kenichi Nakadozono, Keiichiro Iwanabe, Yousuke Senda, Tanemasa Asano, Sensing local dynamic strain and temperature evolution during ultrasonic bonding of microbumps, 6th Electronic System-Integration Technology Conference, ESTC 2016, 10.1109/ESTC.2016.7764714, 2016.12, We have developed a strain gauge sensor to measure two axial dynamic strain and temperature evolution during ultrasonic flip-chip bonding. The sensor detects strain from change in resistance due to the piezoresistance effect of Si and temperature from change in current-voltage characteristics of pn-junction. The spatial resolution of the sensor is 20 μm. Au planar microbumps were used for the measurement. The number of bumps in the test chip was 12100. The measurement results of dynamic strain indicated the generation of a large strain at the initial stage of ultrasonic vibration. On the other hand, rise in temperature up to only a few degrees was observed during the ultrasonic vibration. Therefore, the damage is considered to be generated by mechanical strain at the initial stage of ultrasonic vibration. The sensing method and results will contribute to improving the reliability of three dimensionally integrated electronic devices..
12. Ryo Takigawa, Eiji Higurashi, Tetsuya Kawanishi, Tanemasa Asano, Demonstration of ultraprecision ductile-mode cutting for lithium niobate microring waveguides, Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 10.7567/JJAP.55.110304, 55, 11, 2016.11, In this paper, the application of the ultraprecision ductile-mode cutting method to the fabrication of microring waveguides in lithium niobate crystal was investigated. Although it was difficult to apply a mechanical cutting method to the fabrication of microring waveguides with smooth sidewalls, it was confirmed that no harmful cutting traces on the machined surface occur with the appropriate movement of the cutting tool. The root-meansquare surface roughness of the resulting sidewall was 6.1 nm, which is sufficiently small to suppress the scattering loss of the circulating light. In addition, the conditions for the ductile-mode cutting of lithium niobate crystal were investigated..
13. Ryo Takigawa, Eiji Higurashi, Tetsuya Kawanishi, Tanemasa Asano, Demonstration of ultraprecision ductile-mode cutting for lithium niobate microring waveguides, Jpn. J. Appl. Phys., http://doi.org/10.7567/JJAP.55.04ER07, 55, 11, 110304-1-110304-3, 2016.10.
14. Li Li, Akihiro Ikeda, Tanemasa Asano, Low-temperature oxidation of 4H-SiC using oxidation catalyst SrTi1-xMgxO3-δ, Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 10.7567/JJAP.55.108001, 55, 10, 2016.10, A thermal oxidation method with SrTi1-xMgxO3-δ used as an oxidation catalyst is proposed to oxidize the 4H-SiC surface at low temperatures. The rate constant for the interfacial reaction of the 4H-SiC(0001) Si-face at 800 C is enhanced by approximately two orders of magnitude from that of conventional dry oxidation. The method enables the production of a gate SiO2 layer of a MOSFET at temperatures below 900 C. Electrical characterization of the MOS interface suggests that the catalytic oxidation produces similar interface state densities to those produced by conventional dry oxidation in the energy range of 0.2-0.5 eV from the conduction band edge at 1300 C..
15. Li Li, Akihiro Ikeda, Tanemasa Asano, Low temperature oxidation of 4H-SiC using oxidation catalyst SrTi_{1-x}Mg_{x}O_{3-d}, Jpn. J. Appl. Phys., http://doi.org/10.7567/JJAP.55.108001, 55, 8, 108001-1-108001-3, 2016.08.
16. Hiroki Kawano, Ryo Takigawa, Hiroshi Ikenoue, Tanemasa Asano, Bonding of lithium niobate to silicon in ambient air using laser irradiation, Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 10.7567/JJAP.55.08RB09, 55, 8, 2016.08, In this paper, we introduce a bonding method in ambient air using laser irradiation to the face-to-face interface of dissimilar materials. This method is performed while keeping whole wafers of the materials at room temperature. We demonstrate the bonding of LiNbO3 to Si using pulsed nanosecond green laser irradiation. Laser use can minimize thermal stress owing to a large thermal expansion mismatch. The bonding characteristic obtained by an irradiation laser up to 2.5 J/cm2 in fluence is investigated. It is found that a LiNbO3 chip is strongly bonded to a Si chip by setting the laser fluence at the optimum range. A bond strength of over 2MPa, which may be enough for the device applications, can be obtained..
17. Tanemasa Asano, 3D Integration Technology - Past, Present, and Future-, Proc. 2016 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices, 19-22, 2016.07.
18. Rikuho Sumina, Akihiro Ikeda, Hiroshi Ikenoue, Tanemasa Asano, Thickness dependence of doping characateristic in Al doping into 4H-SiC by laser irradiation to deposited Al film, Proc. 2016 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices, 216-219, 2016.07.
19. Kyosuke Sekiguchi, Yuichi Mukai, Yuki Miyaji, Akihiro Ikeda, Haruichi Kanaya, Tanemasa Asano, Investigation of sensitivity of square-law detectors for radio wave imaging, Proc. 2016 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices, 247-250, 2016.07.
20. Li Li, Akihiro Ikeda, Tanemasa Asano, Enhanced thermal oxidation using SrTi_{1-x}Mg_{x}O_{3-d} catalyst and its application to 4H-SiC, Proc. 2016 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices, 442-445, 2016.07.
21. Kei Mizuta, Rinkoh Fukunaga, Kenji Fukuda, Susumu Nii, Tanemasa Asano, Development and characterization of a flat laminate vapor chamber, Applied Thermal Engineering, https://doi.org/10.1016/j.applthermaleng.2016.05.080, 104, 7, 461-471, 2016.07.
22. Li Li, Akihiro Ikeda, Tanemasa Asano, Enhanced oxidation of Si using low-temperature oxidation catalyst SrTi_{1-x}Mg_{x}O_{3-d}, Jpn. J. Appl. Phys., http://doi.org/10.7567/JJAP.55.108001, 55, 6, 06GJ05-1-06GJ05-5, 2016.06.
23. Akihiro Ikeda, Rikuho Sumina, Hiroshi Ikenoue, Tanemasa Asano, Al doping of 4H-SiC by laser irradiation to coated Al film and its application to junction barrier Schottky diode, Jpn. J. Appl. Phys., http://doi.org/10.7567/JJAP.55.04ER07, 55, 6, 04ER07-1-04ER07-6, 2016.06.
24. Akihiro Ikeda, Rikuho Sumina, Hiroshi Ikenoue, Tanemasa Asano, Al Doping from Laser Irradiated Al Film Deposited on 4H-SiC, Materials Science Forum, 10.4028/www.scientific.net/MSF.858.527, 858, 527-530, 2016.05.
25. Keiichiro Iwanabe, Kenichi Nakadozono, Yosuke Senda, Tanemasa Asano, Room-Temperature Ultrasonic-Bonding Characteristics of Compliant Micro-Bump Investigated by Ex-Situ and In-Situ Measurements, Proc. 17th Electronics Packaging Technology Conference, (5 pages), (2015), 2015.12.
26. Li Li, Akihiro Ikeda, Tanemasa Asano, Enhanced Oxidation of Si Using Low-Temperature Oxidation Catalyst SrTi_{1-x}Mg_{x]O_{3-\delta}, Digest of Papers, 27th International Microprocesses and Nanotechnology Conference , (2 pages), 2015.11.
27. Akihiro Ikeda, Rikuho Sumina, Hiroshi Ikenoue, Tanemasa Asano, Al doping of 4H-SiC by Laser Irradiation to Coated Film and Its Application to Junction Barrier Schottky Diode, Ext. Abs. 2015 International Conference on Solid State Devices and Materials, (2 pages), (2015), 2015.09.
28. Ryo Takigawa, Kohei Nitta, Akihiro Ikeda, Mitsuaki Kumazawa, Toshiharu Hirai, Michio Komatsu, Tanemasa Asano, High-speed via hole filling using electrophoresis of Ag nanoparticles, IEEE 2015 International 3D Systems Integration Conference Proceedings, 95-97, 2015.08.
29. Keiichiro Iwanabe, Tanemasa Asano, Room-Temperature Bonding Mechanism of Compliant Bump with Ultrasonic Assist, IEEE 2015 International 3D Systems Integration Conference Proceedings, 202-205, 2015.08.
30. Akihiro Ikeda, Daichi Marui, Hiroshi Ikenoue, Tanemasa Asano, Nitrogen doping of 4H-SiC by KrF excimer laser irradiation in liquid nitrogen, Jpn. J. Appl. Phys., 10.7567/JJAP.54.04DP02, 54.0, 4.0, 04DP02, 2015.04.
31. Akihiro Ikeda, Daichi Marui, Hiroshi Ikenoue, Tanemasa Asano, Extremely Enhanced Diffusion of Nitrogen in 4H-SiC Observed in Liquid-Nitrogen Immersion Irradiation of Excimer Laser, Materials Science Forum, 10.4028/www.scientific.net/MSF.821-823.448, 821-823, 448-451, 2015.04.
32. Takanori Shuto, Tanemasa Asano, In situ observation of ultrasonic flip-chip bonding using high-speed camera, Jpn. J. Appl. Phys., 10.7567/JJAP.54.030204, 54.0, 3.0, 030204, 2015.03.
33. Keiichiro Iwanabe, Takanori Shuto, Ryo Takigawa, Tanemasa Asano, Softening of Metal under Ultrasonic Application Observed in Bonding of Au Compliant Microbump, Digest of Papers, 27th International Microprocesses and Nanotechnology Conference, (2 pages), (2014), 2014.11.
34. Ryo Takigawa, Hiroki Kawano, Yohei Aoki, Takanori Shuto, Keiichiro Iwanabe, Tanemasa Asano, Expanded Cavity Size of Room-Temperature Hermetic Sealing Using Au Complaint Rim for Microsystem packaging, Digest of Papers, 27th International Microprocesses and Nanotechnology Conference, (2 pages), (2014), 2014.11.
35. Ryo Takigawa, Eiji Higurashi, Tetsuya Kawanishi, Tanemasa Asano, Lithium niobate ridged waveguides with smooth vertical sidewalls fabricated by an ultra-precision cutting method, Optics Express, 10.1364/OE.22.027733, 22, 22, 27733-27738, 2014.11.
36. Takanori Shuto, Tanemasa Asano, Observation of Ultrasonic Bonding Using High Speed Camera, 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D), 45, (2014), 2014.07.
37. Ryo Takigawa, Keiichiro Iwanabe, Takanori Shuto, Takayuki Takao, Tanemasa Asano, Room-temperature hermetic sealing by ultrasonic bonding with Au compliant rim, Jpn. J. Appl. Phys., 10.7567/JJAP.53.06JM05, 53.0, 6.0, 06JM05, 2014.06.
38. Daichi Marui, Akihiro Ikeda, Koji Nishi, Hiroshi Ikenoue, Tanemasa Asano, Aluminum doping of 4H-SiC by irradiation of excimer laser in aluminum chloride solution, Jpn. J. Appl. Phys., 10.7567/JJAP.53.06JF03, 53.0, 6.0, 06JF03, 2014.06.
39. Keiichiro Iwanabe, Takanori Shuto, Tanemasa Asano, Analysis of Room-Temperature Bonded Compliant Bump with Ultrasonic Bonding, Proceedings of 2014 IEEE Electronic Components and Technology Conference (ECTC), 2303-2307, (2014), 2014.05.
40. Takanori Shuto, Keiichiro Iwanabe, Mutsuo Ogura, Katsuhiko Nishida, Tanemasa Asano, Room-temperature bonding of heterogeneous materials for near-infrared image sensor, Jpn. J. Appl. Phys., 10.7567/JJAP.53.04EB01, 53.0, 4.0, 04EB01, 2014.04.
41. Koji Nishi, Akihiro Ikeda, Daichi Marui, Hiroshi Ikenoue, Tanemasa Asano, n- and p-type doping of 4H-SiC by wet-chemical laser processing, Materials Science Forum, 10.4028/www.scientific.net/MSF.778-780.645, 778-780, 645-648, 2014.04.
42. Tetsuya Shimogaki, Taihei Ofuji, Kota Okazaki, Mitsuhiro Higashihata, Daisuke Nakamura, Hiroshi Ikenoue, Tanemasa Asano, Tatsuo Okada, Effect of laser annealing using high repetition rate pulsed laser on optical properties of phosphorus-ion-implanted ZnO nanorods, Appl. Phys. A-Materials Science & Processing, 10.1007/s00339-013-7638-y, 114, 2, 625-629, 2014.02.
43. Koji Nishi, Akihiro Ikeda, Daichi Marui, Hiroshi Ikenoue, Tanemasa Asano, n- and p-type doping of 4H-SiC by wet-chemical laser processing, Materials Science Forum, 10.4028/www.scientific.net/MSF.778-780.645, 778-780, 645-648, 2014.02.
44. Daichi Marui, Koji Nishi, Akihiro Ikeda, Hiroshi Ikenoue, Tanemasa Asano, Aluminum Doping of 4H-SiC using Chemical Wet Laser Processing, Digest of Papers, 26th International Microprocesses and Nanotechnology Conference , (2 pages), 2013.11.
45. Akihiro Ikeda, Kiyoaki Nakahara, Lijing Qiu, Tanemasa Asano, Surface Passivation of Cu Cone bump by Self-Assembled-Monolayer for Room Temperature Cu-Cu Bonding, Proceedings of IEEE International 3D system integration conference 2013, 2013.10.
46. Takanori Shuto, Keiichiro Iwanabe, Mutsuo Ogura, Katsuhiko Nishida, Tanemasa Asano, Room Temperature Bonding of Heterogeneous Materials for Near-Infrared Sensor, Ext. Abs. 2013 International Conference on Solid State Devices and Materials, 36-37, (2013), 2013.09.
47. Koji Nishi, Daichi Marui, Akihiro Ikeda, Hiroshi Ikenoue, Tanemasa Asano, n- and p-type doping of 4H-SiC by wet-chemical laser processing, Technical Digest of the 2013 International Conference on Silicon Carbide and Related Materials, (2 pages), 2013.09.
48. Keiichiro Iwanabe, Takanori Shuto, Tanemasa Asano, Microjoining of Compound semiconductor and Silicon Using Cone-Shaped Au Bump for Image Sensors, Workshop digest of Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 337-340, (2013), 2013.06.
49. Koji Nishi, Akihiro Ikeda, Hiroshi Ikenoue, Tanemasa Asano, Phosphorus Doping into 4H-SiC by Irradiation of Excimer Laser in Phosphoric Solution, Jpn. J. Appl. Phys., 10.7567/JJAP.52.06GF02, 52.0, 6.0, 06GF02, 2013.06.
50. Lijing Qiu, Akihiro Ikeda, Tanemasa Asano, Effect of Coating Self-Assembled Monolayer on Room-Temperature Bonding of Cu Micro-Interconnects, Jpn. J. Appl. Phys., 10.7567/JJAP.52.068004, 52, 6, pp.068004-1-3, 2013.06.
51. Akihiro Ikeda, Koji Nishi, Daichi Marui, Hiroshi Ikenoue, Tanemasa Asano, Characteristic of pn Junction Formed in 4H-SiC by using Excimer-laser Processing in Phosphoric Solution, Ext. Abst. the 13th International Workshop on Junction Technology 2013, pp.63-pp.65, 2013.06.
52. Koji Nishi, Akihiro Ikeda, Daichi Marui, Hiroshi Ikenoue, Tanemasa Asano, Formation of pn junction in 4H-SiC by irradiation of excimer laser in phosphoric solution, Workshop digest of 2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 341-343, (2013), 2013.06.
53. Takanori Shuto, Keiichiro Iwanabe, Kazuhiro Noda, Seiya Nakai, Tanemasa Asano, Ultrasonic Bonding of Cone Bump for Integration of Large-Scale Integrated Circuits in Flexible Electronics, Jpn. J. Appl. Phys., 10.7567/JJAP.52.05DB10, 52, 5, 05DB10-1-05DB10-5, (2013), 2013.05.
54. Takanori Shuto, Keiichiro Iwanabe, Lijing Qiu, Tanemasa Asano, Room-Temperature High-Density Interconnection using Ultrasonic Bonding of Cone Bump for Heterogeneous Integration, Proceedings of 2013 IEEE Electronic Components and Technology Conference, 1141-1145, (2013), 2013.05.
55. Lijing Qiu, Akihiro Ikeda, Tanemasa Asano, Room-Temperature Cu Microjoining with Ultrasonic Bonding of Cone-Shaped Bump, Jpn. J. Appl. Phys., 10.7567/JJAP.52.04CB10, 52, 4, pp. 04CB10-1-5, 2013.04.
56. Akihiro Ikeda, Koji Nishi, Hiroshi Ikenoue, Tanemasa Asano, Phosphorus doping of 4H SiC by liquid immersion excimer laser irradiation, Appl. Phys. Lett., org/10.1063/1.4790621, Vol. 102, No. 5, 052104 (4 pages), (2013), 2013.02.
57. Takanori Shuto, Keiichiro Iwanabe, Tanemasa Asano, High-Density Room-Temperature Bonding of LSI Chips on Planar Film Using Cone Bump, Abstract of 9th International Thin-Film Transistor Conference, 2aAO02, (2013), 2013.01.
58. Takanori Shuto, Keiichiro Iwanabe, Lijing Qiu, Tanemasa Asano, Room Temperature Microjoining of qVGA Class Area-Bump Array Using Cone Bump, Proceedings of 2nd IEEE CPMT Symposium Japan, 43-46, (2012), 2012.11.
59. Koji Nishi, Akihiro Ikeda, Hiroshi Ikenoue, Tanemasa Asano, Phosphorus Incorporation in 4H-SiC by Irradiation of Eximer Laser in Phosphoric Solution, Digest of Papers, 25th International Microprocesses and Nanotechnology Conference, (2 pages), (2012), 2012.11.
60. Takanori Shuto, Keiichiro Iwanabe, Kazuhiro Noda, Seiya Nakai, Tanemasa Asano, Ultrasonic Bonding of Cone Bump for Integration of LSIs in Flexible Electronics, Abstract of 2012 International Conference on Flexible and Printed Electronics, S19-P1, (2012), 2012.09.
61. Akihiro Ikeda, Koji Nishi, Hiroshi Ikenoue, Tanemasa Asano, Phosphorus Doping of 4H-SiC by KrF Excimer Laser Irradiation in Phosphoric Solution, Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials, 1251-1252, (2012), 2012.09.
62. Akihiro Ikeda, Koji Nishi, Kazuhiro Yoshikawa, Yasushi Kozuki, Tanemasa Asano, Doping SiC with Phosphorus Using Wet-Laser Chemical Processing, Abstracts of the 38th International Micro & Nano Engineering Conference, (2 pages), (2012), 2012.09.
63. Lijing Qiu, Akihiro Ikeda, Kazuhiro Noda, Seiya Nakai, Tanemasa Asano, Room-Temperature Cu Microjoining Using Ultrasonic Bonding of Cone Shaped Bump, Ext. Abs. 2012 International Conference on Solid State Devices and Materials, 1181-1182, (2012), 2012.09.
64. Ryo Takigawa, Hiroki Kawano, Takanori Shuto, Akihiro Ikeda, Takyuki Takao, Tanemasa Asano, Room-temperature vacuum packaging using ultrasonic bonding with Cu complaint rim, Proc. 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D), 44, (2012), 2012.07.
65. Keiichiro Iwanabe, Takanori Shuto, Kazuhiro Noda, Seiya Nakai, Tanemasa Asano, Room-temperature microjoining using ultrasonic bonding of compliant bump, 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D), 10.1109/LTB-3D.2012.6238081, 167-170, (2012), 2012.07.
66. Lijing Qiu, Kiyoaki Nakahara, Akihiro Ikeda, Tanemasa Asano, Surface protection of copper by self assembled monolayer for low-temperature chip bonding, 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D), 10.1109/LTB-3D.2012.6238050, 75-78, (2012), 2012.07.
67. Sho Nagata, Gou Nakagawa, Tanemasa Asano, Impact on TFT Characteristics of Rapid Crystallization of Si Using Nickel-Metal Induced Lateral Crystallization, Jpn. J. Appl. Phys, doi:10.1143/JJAP.51.02BH04, 51.0, 2.0, 02BH04 (4 pages), (2012), 2012.02.
68. Akihiro Ikeda, Naoya Watanabe, Tanemasa Asano, High Frequency Signal Transmission Characteristics of Cone Bump Interconnec-tions, Technical Digest of the IEEE International 3D System Integration Conference 2011 (3DIC2011), P-1-4 (4 pages), (2012), 2012.02.
69. Takanori Shuto, Naoya Watanabe, Akihiro Ikeda, Tanemasa Asano, Low-Temperature Bonding of LSI Chips to PEN Film Using Au Cone Bump for Heterogeneous Integration, Technical Digest of the IEEE International 3D System Integration Conference 2011 (3DIC2011), P-1-5 (4 pages), (2012), 2012.02.
70. Akihiro Ikeda, Naoya Watanabe, Tanemasa Asano, High frequency signal transmission characteristics of cone bump interconnections, 2011 IEEE International 3D Systems Integration Conference (3DIC), 10.1109/3DIC.2012.6263011, 1-5, (2012), 2012.01.
71. Takanori Shuto, Naoya Watanabe, Akihiro Ikeda, Tanemasa Asano, Low-temperature bonding of LSI chips to PEN film using Au cone bump for heterogeneous integration, 2011 IEEE International 3D Systems Integration Conference (3DIC), 10.1109/3DIC.2012.6263012, 1-4, (2012), 2012.01.
72. Takanori Shuto, Naoya Watanabe, Akihiro Ikeda, Tanemasa Asano, Room Temperature Bonding of LSI Chips on PEN Film Using Mechanical Calking of Au Cone Bump, Extended Abstract of 2011 International Conference on Solid State Devices and Materials, 787-788, (2011), 2011.09.
73. Xun Yi, Gou Nakagawa, Hiroaki Ozawa, Tsuyohiko Fujigaya, Naotoshi Nakashima, Tanemasa Asano, Ion Beam Bombardment Effect on Contacts in Solution-Processed Single-Walled Carbon Nanotube Thin Film Transistor, Jpn. J. Appl. Phys, doi:10.1143/JJAP.50.098003, 50.0, 9.0, 098003 (2 pages), (2011), 2011.09.
74. Lijing Qiu, Tanemasa Asano, Selective Heating of Microbumps Using Microwave for Low Strain Heterogeneous Chip Stack Integration, Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials (SSDM2011), 68-69 (2 pages), (2011), 2011.09.
75. Takanori Shuto, Naoya Watanabe, Akihiro Ikeda, Tanemasa Asano, Room-Temperature Bonding of LSI Chips on PEN Film Using Mechanical Caulking of Au Cone Bump, Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials (SSDM2011), 787-788 (2 pages, (2011), 2011.09.
76. Xun Yi, Gou Nakagawa, Hiroaki Ozawa, Tsuyohiko Fujigaya, Naotoshi Nakashima, Tanemasa Asano, Argon Ion Bombardment to Improve Contacts in Solution-Processed Single-Walled Carbon Nanotube Thin Film Transistor, Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials (SSDM2011, 1266-1267 (2 pages), (2011), 2011.09.
77. Sho Nagata, Gou Nakagawa, Tanemasa Asano, Impact on TFT Characteristics of Rapid Crystallization of Si Using Nickel-Metal Induced Lateral Crystallization, Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials (SSDM2011), 1422-1423 (2 pages), (2011), 2011.09.
78. Gou Nakagawa, Tatsuya Nakamae, Tanemasa Asano", Investigation of Ni Metal Induced Lateral Crystallization with a-Si Film Thickness at Very Thin Extent, Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials (SSDM2011), 1426-1427 (2 pages), (2011), 2011.09.
79. Hiroaki Ozawa, Xun Yi, Tsuyohiko Fujigaya, Yasuro Niidome, Tanemasa Asano,, Naotoshi Nakashima, Supramolecular Hybrid of Gold Nanoparticles and Semiconducting Single-Walled Carbon Nanotubes Wrapped by a Porphyrin?Fluorene Copolymer, J. Am. Chem. Soc., doi:10.1021/ja2055885, 133.0, 37.0, 14771-14777, (2011), 2011.08.
80. Xun Yi, Hiroaki Ozawa, Gou Nakagawa, Tsuyohiko Fujigaya, Naotoshi Nakashima, Tanemasa Asano, Single-Walled Carbon Nanotube Thin Film Transistor Fabricated Using Solution Prepared with 9,9-Dioctyfluorenyl-2,7-diyl-Bipyridine Copolymer, Jpn. J. Appl. Phys, doi:10.1143/JJAP.50.070207, 50.0, 7.0, 070207 (3 pages), (2011), 2011.07.
81. Naoya Kawamoto, Kazuyuki Tadatomo, Tetsuya Imamura, Yuka Tomizawa, Gou Nakagawa, Tanemasa Asano, Crystal Growth Mechanism of Polycrystalline Si on Polycarbonate Substrate, Digest of Technical Papers 18th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD2011), 125-128, (2011), 2011.07.
82. Takanori Shuto, Naoya Watanabe, Akihiro Ikeda, Takao Higashimachi, Tanemasa Asano, Microjoining of LSI Chips on Poly(ethylene naphthalate) Using Compliant Bump, Jpn. J. Appl. Phys., 10.1143/JJAP.50.06GM05, 50, 5, 06GM05-1-06GM05-5, (2011), 2011.06.
83. Takanori Shuto, Naoya Watanabe, Akihiro Ikeda, Tanemasa Asano, Low-Temperature Bonding of LSI Chips to Polymer Substrate using Au Cone Bump for Flexible Electronics, Proceedings of the 61st Electronic Components and Technology Conference (ECTC2011), 1770-1774, (2011), 2011.06.
84. Takanori Shuto, Naoya Watanabe, Akihiro Ikeda, Tanemasa Asano, Low-temperature bonding of LSI chips to polymer substrate using Au cone bump for flexible electronics, 2011 IEEE 61st Electronic Components and Technology Conference (ECTC), 10.1109/ECTC.2011.5898752, 1770-1774, 2011.05.
85. Xun Yi, Hiroaki Ozawa, Gou Nakagawa, Tsuyohiko Fujigaya, Naotoshi Nakashima, Tanemasa Asano, Suppressing Current Hysteresis of Solution-processed Thin Film Transistor Made of Single-chirality Single-walled Carbon Nanotube Networks, Proceedings of the 7th International TFT Conference (ITC2011), 41.0, (2011), 2011.03.
86. Sho Nagata, Gou Nakagawa, Tanemasa Asano, Investigation of MILC Growth Kinetics for Rapid Crystallization with Emphasis on Grain Filtering, Proceedings of the 7th International TFT Conference (ITC2011), 81-82, (2011), 2011.03.
87. Xun YI, Hiroaki Ozawa, Gou Nakagawa, Tsuyohiko Fujigaya, Naotoshi Nakashima, Tanemasa Asano, Suppressing Current Hysteresis of Solution-Processed Thin-Film Transistor Made of Single-Chirality Single-Walled Carbon Nanotube Networks, Ext. Abs. 2011 7th International Thin-Film Transistor Conference, 41.0, (2011), 2011.03.
88. Naoya Watanabe, Tanemasa Asano, Characteristics of a Novel Compliant Bump for 3-D Stacking With High-Density Inter-Chip Connections, IEEE Transactions on Components, Packaging and Manufacturing Technology, 10.1109/TCPMT.2010.2101450, 1, 1, 83-91, (2011), 2011.01.
89. Naoya Watanabe, Tanemasa Asano, Room-Temperature Cu-Cu Bonding in Ambient Air Achieved by Using Cone Bump, Applied Physics Express, doi:10.1143/APEX.4.016501, 4.0, 1.0, 016501 (3 pages), (2011), 2011.01.
90. Takanori Shuto, Naoya Watanabe, Akihiro Ikeda, Takao Higashimachi, Tanemasa Asano, Direct Connection of LSI Chips to Polyethylene Naphthalate Using Au Cone Bump, Proceedings of 17th International Display Workshops, 1717-1720, (2010), 2010.12.
91. Takanori Shuto, Naoya Watanabe, Akihiro Ikeda, Takao Higashimachi, Tanemasa Asano, Direct Connection of LSI Chips to Polyethylene Naphthalate Using Au Cone Bump, Proceedings of The 17th International Display Workshops, 1717-1720, (2010), 2010.12.
92. Takanori Shuto, Naoya Watanabe, Akihiro Ikeda, Takao Higashimachi, Tanemasa Asano, Direct Bonding of LSI Chips to Flexible Substrate Using Compliant Bump, Digest of International Microprocesses and Nanotechnology Conference, 10C-3-4-1-10C-3-4-2, (2010), 2010.11.
93. Sho Nagata, Gou Nakagawa, Tanemasa Asano, Grain Filtering in MILC and Its Impact on Performance of n- and p-channel TFTs, IEEE-TENCON2010(to be published), (2010), 2010.11.
94. Akihiro Ikeda, Kouhei Kajiwara, Naoya Watanabe, Tanemasa Asano, High-Frequency Signal Transmission Characteristics of Coplanar Waveguides with Cone Bump Interconnections, Proceedings of IEEE TENCON 2010, 21-24, (2010), 2010.11.
95. Naoya Watanabe, Takao Higashimachi, Tanemasa Asano, Deformation Analysis of Au Cone Bump in 3D LSI Stacking Compliant Bump, Proceedings of the 23rd International Microprocesses and Nanotechnology Conference (MNC2010), 11D-8-120 (2 pages), (2010), 2010.11.
96. Takanori Shuto, Naoya Watanabe, Akihiro Ikeda, Takao Higashimachi, Tanemasa Asano, Direct Bonding of LSI Chips to Flexible Substrate Using Compliant Bump", MNC 2010 Digest, 10C-3-4 (2 pages), (2010), 2010.11.
97. Tanemasa Asano, Yuji Ishida, 「Invited] Nano-inkjet and Its Application to Metal-Induced Crystallization of a-Si for poy-Si TFT, ECS Transactions, doi:10.1149/1.3481229, 33.0, 5.0, 149-156, (2010), 2010.10.
98. Naoya Watanabe, Fumihiko Hoashi, Youichi Nagai, Hiroshi Inada, Yasuhiro Iguchi, Tanemasa Asano, Near-Infrared Image Sensor Fabricated Using Compliant Bump, Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials (SSDM2010), 1210 - 1211, (2010), 2010.09.
99. Gou Nakagawa, Naoya Kawamoto, Tetsuya Imamura, Yuka Tomizawa, Tadaki Miyoshi, Kazuyuki Tadatomo, Tanemasa Asano, Fabrication of Poly-Si TFT on Polycarbonate Substrate at Temperatures below 135℃, Ext. Abs. 2010 SSDM International Conference on Solid State Devices and Materials, 1305-1306, (2010), 2010.09.
100. Akihiro Ikeda, Kouhei Kajiwara, Naoya Watanabe, Tanemasa Asan, Effect of Argon/Hydrogen Plasma Cleaning on Electroless Ni Deposition on Small-Area Al Pads, Jpn. J. Appl. Phys, doi:10.1143/JJAP.49.08JA05, 49.0, 8.0, 08JA05-4, (2010), 2010.08.
101. Akihiro Ikeda, K. Kajiwara, Naoya Watanabe, Tanemasa Asano, High-frequency signal transmission characteristics of coplanar waveguides with cone bump interconnections, Proceedings of 2010 IEEE Region 10 Conference, 10.1109/TENCON.2010.5686711, 2191-2195, (2010), 2010.07.
102. K. Toya, K. Kubo, K. Tsuta, Daisuke Nakamura, M. Higashihata, Tatsuo Okada, Tanemasa Asano, Patterned growth of ZnO nanowires using NAPLD with nano-imprint, Proceedings of 2010 IEEE Region 10 Conference, 10.1109/TENCON.2010.5686659, 2243-2243, (2010), 2010.07.
103. Sho Nagata, Gou Nakagawa, Tanemasa Asano, Grain filtering in MILC and its impact on performance of n- and p-channel TFTs, Proceedings of 2010 IEEE Region 10 Conference, 10.1109/TENCON.2010.5686540, 951-956, (2010)., 2010.07.
104. Naoya Kawamoto, Tetsuya Imamura, Gou Nakagawa, Yuka Tomizawa, Tanemasa Asano, Tadaki Miyoshi, Kazuyuki Tadatomo, Growth of Polycrystalline Si Film by Conventional Laser Annealing on Polycarbonate Substrate and its Application for Thin Film Transistors, Proc. 2010 AM-FPD International Workshop on Active-Matrix Flatpanel Displays and Devices, 157-158, (2010), 2010.07.
105. Xun YI, Hiroaki Ozawa, Gou Nakagawa, Tsuyohiko Fujigaya, Naotoshi Nakashima, Tanemasa Asano, Thin Film Transistor Based on Single-Walled Carbon Nanotube with PFO-Bipy Polymer, TheProceeding of AM-FPD'10, 65-68, (2010), 2010.07.
106. Naoya Watanabe, Tanemasa Asano, Room-Temperature Chip-stack Interconnection Using Compliant Bumps and Wedge-Incorporated Electrodes, Proceedings of the 60th Electronic Components and Technology Conference (ECTC2010), 1763 - 1768, (2010), 2010.06.
107. Naoya Watanabe, Tanemasa Asano, Room-temperature chip-stack interconnection using compliant bumps and wedge-incorporated electrodes, 2010 Proceedings IEEE 60th Electronic Components and Technology Conference (ECTC), 10.1109/ECTC.2010.5490730, 1763-1768, (2010), 2010.05.
108. L.Qiu, N.Watanabe, T.Asano, A Liquid-Phase Bonding for High Density Chip-Stack Interconnection, IMFEDK 2010, 36-37, (2010), 2010.05.
109. Xun YI, Hiroaki Ozawa, Gou Nakagawa, Tsuyohiko Fujigaya, Naotoshi Nakashima, Tanemasa Asano, SWCNT TFT Made from Solution Process via PFOb Solubilizer, Ext. Abs. 2010 IMFEDK International Meeting for Future of Electron Devices, Kansai, 46-47, (2010), 2010.05.
110. Naoya Watanabe, Isao Tsunoda, Takayuki Takao, Koichiro Tanaka, Tanemasa Asano, Fabrication of Back-Side Illuminated Complementary Metal Oxide Semiconductor Image Sensor Using Compliant Bump, Jpn. J. Appl. Phys, doi:10.1143/JJAP.49.04DB01, 49.0, 04DB01 (8 pages), (2010), 2010.04.
111. Naoya Watanabe, Tanemasa Asano, Room-Temperature Bonding Using Mechanical Caulking Effect of Compliant Bumps for Chip-Stack Interconnection, Jpn. J. Appl. Phys, doi:10.1143/JJAP.49.04DB02, 49.0, 04DB02 (4 pages), (2010), 2010.04.
112. Shinichiro Adachi, Tanemasa Asano, Investigation of Enhanced Impact Ionization in Uniaxially Strained Si n-Channel Metal Oxide Semiconductor Field Effect Transistor, Jpn. J. Appl. Phys, doi:10.1143/JJAP.49.04DC14, 49.0, 04DC14 (4 pages), (2010), 2010.04.
113. Sho Nagata, Gou Nakagawa, Tanemasa Asano, Impact on TFT Performance of Patterning of a-Si Prior to MILC, The Proceedings of The 6th International Thin-Film Transistor Conference, 261-264, (2010), 2010.01.
114. Yuji Ishida, Masahito Uotani, Tanemasa Asano, Droplet Generation Behavior in Electrostatic Inkjet Patterning, Proc. The 6th International Thin-Film Transistor Conference, Hyogo, 210-213, (2010), 2010.01.
115. Mitsuhiro Hanabe, Yahya Moubarak MEZIANI, Taiichi Otsuji, Eiichi Sano, and Tanemasa Asano, Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer, IEICE TRANSACTIONS on Electronics, Volume E90-C No.5, pp.949-954, 2007.05.
116. Yuji Ishida, Gou Nakagawa, and Tanemasa Asano, Inkjet-Printed Metal-Collid-Induced Crysatallization of Amorphous Silicon, Jpn. J. Appl. Phys., Vol. 46, No. 3B, pp. 1263-1267, 2007.03.
117. Tanemasa Asano and Gou Nakagawa, Location and Orientation Control of Si Thin-Film Grains Using Metal Nano-Imprint Seeding of Laser Annealing, Proc. 2007 International TFT Conference, pp. 74-77, 2007.01.
118. Gou Nakagawa and Tanemasa Asano, Orientation Control of Location-Controlled Si Crystal Grain by Combining Ni Nao-Imprint and Excimer Laser Annealing with Si Double-Layer Process, Jpn. J. Appl. Phys., Vol. 45, No. 49, pp. L1293-L1295, 2006.11.
119. Yuji Ishida, Gou Nakagawa, and Tanemasa Asano, Inkjet Printing of Ni Nano-Size-Particles for Metal Induced Crystallization of Amorphous Si, Tech. Dig. 2006 Int. Conf. Microprocess and Nanotechnology, pp. 336-337, 2006.10.
120. Keigo Sogabe, Yuji Ishida, and Tanemasa Asano, Analysis of Droplet Ejection Behavior of Electrostatic Inkjet Nozzle, Tech. Dig. 2006 Int. Conf. Microprocess and Nanotechnology, pp. 392-393, 2006.10.
121. Hiroshi Nakashima, Masanobu Miyao, Masahiko Nakamae, and Tanemasa Asano, Development of Strained Si-SiGe-on-Insulator Wafers for High Speed ULSI, Proc. 2006 (8th) Int. Conf. Solid-State and Integrated Circuit Technology, pp. 100-103, 2006.10.
122. Gou Nakagawa and Tanemasa Asano, Combination of Metal Nano-Imprint and Excimer Laser Annealing for Location Control of Si Thin-Film Grain, Proc. of the Material Research Society Symposium, (on-line), 2006.10.
123. Naoya Watanabe and Tanemasa Asano, Damageless Chip Stacking Using Compliant Bumps, Proc. of Advanced Metallization Conference (ADMETA) 2006, pp. 25-27, 2006.09.
124. Yuji Ishida, Keigo Sogabe, Kazunori Hakiai, Akiyoshi Baba, and Tanemasa Asano, Properties of Ink-Droplet Formation in Double-Gate Electrospray, Jpn. J. Appl. Phys., Vol. 45, No. 8A, pp. 6475-6480, 2006.08.
125. Mitsuhiro Hanabe, Taiichi Otsuji, Yahya M. Meziani, Eiichi Sano, and Tanemasa Asano, Terahertz Emission of Radiation Produced by Photoexcited Instability of Two-Dimensional Plasmons in an InGaP/InGaAs/GaAs Heterostructure Transistor, Proc. 2006 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devicevs, pp. 291-294, 2006.07.
126. Tanemasa Asano, Masahiko Esaki, and Gou Nakagawa, Low Temperature Formation of Source and Drain Using Snow Plow Effect of Silicidation, Dig. Tech. Papers, The 13th Int. Workshop on Active-Matrix Flatpanel Displays and Devices, pp. 31-34, 2006.07.
127. Yuji Ishida, Gou Nakagawa, and Tanemasa Asano, Inkjet-Printed Ni-Colloid Induced Crystallization of Amorphous Si, Dig. Tech. Papers, The 13th Int. Workshop on Active-Matrix Flatpanel Displays and Devices, pp. 51-54, 2006.07.
128. Akiyoshi Baba and Tanemasa Asano, Fabrication of a Gated Cold Cathode Using the Inkjet Embedding Method, Jpn. J. Appl. Phys., Vol. 45, No. 6B, pp. 5631-5636, 2006.06.
129. Mika Nishisaka and Tanemasa Asano, Application of Microwave Plasma Gate Oxidation to Strained-Si/SiGe on Insulator, Jpn. J. Appl. Phys., Vol. 45, No. 4B, pp. 2914-2918, 2006.05.
130. Naoyuki Higashi, Gou Nakagawa, and Tanemasa Asano, Location and Orientation Control of Si Grains by Combining Metal-Induced
Lateral Crystallization and Excimer Laser Annealing, Jpn. J. Appl. Phys., Vol. 45, No. 5B, pp. 4347-4350, 2006.05.
131. Gou Nakagawa, Tanemasa Asano, and Mitsutoshi Miyasaka, Location Control of Si Thin-Film Grain Using Ni Imprint and Excimer Laser
Annealing, Jpn. J. Appl. Phys., Vol. 45, No. 5B, pp. 4335-4339, 2006.05.
132. Naoya Watanabe and Tanemasa Asano, A Large Number of I/O Connections Using Compliant Bump, Proc. 2006 Electronic Components & Technology Conference, pp. 125-130, 2006.05.
133. Naoya Watanabe, Takeaki Kojima, and Tanemasa Asano, Wafer-level Compliant Bump for 3D Chip-Stacking, Proc. 2006 International Symposium on VLSI Technology, Systems, and Applications, pp. 135-138, 2006.04.
134. Tomoya Yoshida, Akiyoshi Baba, and Tanemasa Asano, Fabrication of Gated Cold Cathode Using Standing Thin Film Induced by Ion-Beam
Bombardment, J. Vac. Sci. Technol., Vol. B24, No.2, pp. 932-935, 2006.03.
135. Mika Nishisaka, Osamu Shirata, Daisuke Sakamoto, Toyotsugu Enokida, Yasuhiro, Local Wet Oxidation Characteristic of Strained-Si/SiGe-on-Insulator, Thin Solid Films, Vol. 508, pp. 256-259, 2006.02.
136. Gou Nakagawa and Tanemasa Asano, Location Control of Silicon Crystal Nucleation in Excimer Laser Annealing Using Metal Imprint Technology, Proc. 2nd International TFT Conference, pp. 198-201, 2006.01.
137. Naoyuki Higashi and Gou Nakagawa, and Tanemasa Asano, ELA of MILC Si Film on Pit Substrate for Location and Orientation Control of Crystal Grain, Proc. the 2nd International TFT Conference, pp. 218-221, 2006.01.
138. Tanemasa Asano, Kazunori Watanabe, Masahiko Esaki, Gou Nakagawa, Susumu Sakuragi, Toshio Kudo, and Kazunori Yamasaki, TFT Characterization of Latrally Grown Polycrystalline Si Film Prepared Using Double-Pulse Laser Scanning, Proc. 2nd International TFT Conference, pp. 154-157, 2006.01.
139. Tsugutomo Kudoh and Tanemasa Asano, SiGe-collector teench gate insulated gate bipolar transistor fabricated using multiple target sputtering, Solid State Electronics, Vol. 49, pp. 2006-2010, 2005.11.
140. Mika Nishisaka and Tanemasa Asano, Application of Plasma Oxidation on Strained-Si/SiGe MOSFET, Materials Science in Semiconductor Processing, Vol. 8, pp. 225-230, 2005.08.
141. Kazunori Hakiai, Yuji Ishida, Akiyoshi Baba, and Tanemasa Asano, Electrostatic Droplet Ejection Using Planar Needle Inkjet Head, Jpn. J. Appl. Phys., Vol. 44, No. 7B, pp. 5781-5785, 2005.07.
142. Tomoya Yoshida, Akiyoshi Baba, and Tanemasa Asano, Fabrication of Micro Field Emitter Tip Using Ion-Beam Irradiation-Induced Self-Standing of Thin Films, Jpn. J. Appl. Phys., Vol. 44, No. 7B, pp. 5744-5748, 2005.07.
143. Yuji Ishida, Kazunari Hakiai, Akiyoshi Baba, and Tanemasa Asano, Electrostatic Inkjet Patterning Using Si Needle Prepared by Anodization, Jpn. J. Appl. Phys., Vol. 44, No. 7B, pp. 5786-5790, 2005.07.
144. Gou Nakagawa, Noritoshi Shibata, and Tanmeasa Asano, Effects of Electric Field on Metal-Induced Lateral Crystallization under Limited Ni-Supply Condition, IEICE Trans. Electron., Vol. E88-C, No. 4, pp. 662-666, 2005.04.