Kyushu University Academic Staff Educational and Research Activities Database
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Naho Itagaki Last modified date:2015.5.25

Associate Professor / Division of Electronic Devices
Department of Electronics
Faculty of Information Science and Electrical Engineering


Graduate School
Undergraduate School
Other Organization


Homepage
[URL].
Phone
092-642-2111
Academic Degree
Doctor of Science
Field of Specialization
Plasma Science, Inorganic Material Science
Research
Research Interests
  • Fabrication of ultrafast switching devices using excitonic transistor
    keyword : excitonic devices, transistor
    2011.01.
  • Development of alternative rare metal materials for next generation electronic/photonic diveices
    keyword : alternative rare metal, electronic devices, photonic devices
    2010.04.
  • Development of novel fabrication method for oxide semiconductors

    keyword : oxide semiconductor
    2010.04.
Academic Activities
Papers
1. K. Matsushima, R. Shimizu, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki,Fabrication of ZnInON/ZnO multi-quantum well solar cells,Thin Solid Films,Vol.587,pp.106-111,2015.07.
2. 板垣 奈穂, 松島宏一, 山下大輔, 徐 鉉雄, 古閑 一憲, 白谷 正治,ZnO-based semiconductors with tunable band gap for solar sell applications,SPIE OPTO,Vol.93640P,2015.03
[URL].
3. T. Ide, K. Matsushima, R. Shimizu, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki,Effects of morphology of buffer layers on ZnO/sapphire heteroepitaxial growth by RF magnetron sputtering,Mat. Res. Soc. Symp. Proc.,Vol.1741,pp.aa09-12,2015.01.
4. K. Matsushima, R. Shimizu, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki,Fabrication of p-i-n solar cells utilizing ZnInON by RF magnetron sputt,Mat. Res. Soc. Symp. Proc.,Vol.1741,pp.aa09-10,2015.01.
5. H. Seo, D. Ichida, S. Hashimoto, G. Uchida, N. Itagaki, K. Koga, and M. Shiratani,Photovoltaic application of Si nanoparticles fabricated by multihollow plasma discharge CVD: Dye and Si co-sensitized solar cells,Jpn. J. Appl. Phys. ,Vol.54,pp.01AD02,2015.01.
6. I. Suhariadi, M. Shiratani, N. Itagaki,Growth mechanism of ZnO deposited by nitrogen mediated crystallization,Mater. Res. Express,Vol.1,No.3,pp.036403,2014.09.
7. N. Itagaki, K. Matsushima, D. Yamashia, H. Seo, K. Koga, M. Shiratani,Synthesis and characterization of ZnInON semiconductor: a ZnO-based compound with tunable band gap,Mater. Res. Express,Vol.1,No.3,pp.036405,2014.09.
8. H. Seo, D. Ichida, S. Hashimoto, G. Uchida, N. Itagaki, K. Koga, and M. Shiratani,Performance enhancement of dye and Si quantum dot hybrid nanostructured solar cell with TiO2 barrier,Trans. Mater. Res. Soc. Jpn.,Vol.39,No.3,pp.321-324,2014.09.
9. N. Itagaki, K. Kuwahara, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani,Off-axis sputter deposition of ZnO films on c-sapphire substrates by utilizing nitrogen-mediated crystallization method,Opt. Engineering,Vol.53,No.8,pp.087109,2014.08.
10. J.W. Allen, M.S. Allen, D.C. Look, B.R. Wenner, N. Itagaki, K. Matsushima, I. Surhariadi,Infrared Plasmonics via ZnO,J. Nano Res.,Vol.8,pp.109,2014.06.
11. D. Ichida, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga and M. Shiratani,Deposition of crystalline Ge nanoparticle films by high-pressure RF magnetron sputtering method,J. Phys. : Conf. Series (SPSM26),Vol.518,No.1,pp.012002,2014.06.
12. Y. Hashimoto, S. Toko, D. Yamashita, H. Seo, K. Kamataki, N. Itagaki, K. Koga and M. Shiratani,Effects of filter gap of cluster-eliminating filter on cluster eliminating efficiency,J. Phys. : Conf. Series (SPSM26),Vol.518,No.1,pp.012007,2014.06.
13. S. Toko, Y. Hashimoto, Y. Kanemitu, Y. Torigoe, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga and M. Shiratani,Contribution of ionic precursors to deposition rate of a-Si:H films fabricated by plasma CVD,J. Phys. : Conf. Series (SPSM26),Vol.518,No.1,pp.012008,2014.06.
14. M. Tateishi, K. Koga, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura and A. Sagara, the LHD Experimental Group,Contribution of H2 plasma etching to radial profile of amount of dust particles in a divertor simulator,J. Phys. : Conf. Series (SPSM26),Vol.518,No.1,pp.012009,2014.06.
15. X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine and M. Hori,Emission spectroscopy of Ar + H2 + C7H8 plasmas: C7H8 flow rate dependence and pressure dependence,J. Phys. : Conf. Series (SPSM26),Vol.518,No.1,pp.012010,2014.06.
16. T. Ito, K. Koga, D. Yamashita, K. Kamataki, N. Itagaki, G. Uchida and M. Shiratani,Plasma etching of single fine particle trapped in Ar plasma by optical tweezers,J. Phys. : Conf. Series (SPSM26),Vol.518,No.1,pp.012014,2014.06.
17. M. Shiratani, G. Uchida, H. Seo, D. Ichida, K. Koga, N. Itagaki, and K. Kamataki,Nanostructure Control of Si and Ge Quantum Dots Based Solar Cells Using Plasma Processes,Materials Science Forum,Vol.783-786,pp.2022-2027,2014.05.
18. H. Seo, D. Ichida, G. Uchida, N. Itagaki, K. Koga, M. Shiratani,Performance dependence of Si quantum dot-sensitized solar cells on counter electrode,Jpn. J. Appl. Phys. ,Vol.53,No.5S1,pp.05FZ01,2014.05.
19. M. Shiratani, K. Kamataki, G. Uchida, K. Koga, H. Seo, N. Itagaki, T. Ishihara,SiC Nanoparticle Composite Anode for Li-Ion Batteries,Mat. Res. Soc. Symp. Proc.,Vol.1678,2014.04.
20. H. Seo, M. Son, S. Park, M. Jeong, H. Kim, G. Uchida, N. Itagaki, K. Koga, M. Shiratani,Electrochemical impedance analysis on the additional layers for the enhancement on the performance of dye-sensitized solar cell,Thin Solid Films,Vol.554,pp.122-126,2014.03.
21. N. Itagaki, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani,Off-axis sputter deposition of ZnO films on c-sapphire substrates with buffer layers prepared via nitrogen-mediated crystallization,Proc. SPIE photonics west 2014,Vol.8987,pp.89871A,2014.03.
22. G. Uchida, Y. Kanemitsu, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Combinatorial Plasma CVD of Si Nanoparticle Composite Films for Band Gap Control,Jpn. Phys. Soc. Conf. Proc (APPC12),Vol.1,pp.015080,2014.03.
23. M. Shiratani, Y. Morita, K. Kamataki, H. Seo, G. Uchida, N. Itagaki, K. Koga,Correlation between nanoparticle growth and plasma parameters in low pressure reactive VHF discharge plasmas,Jpn. Phys. Soc. Conf. Proc (APPC12),Vol.1,pp.015083,2014.03.
24. G. Uchida, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Effects of H2 Gas Addition on Structure of Ge Nanoparticle Films Deposited by High-pressure RF Magnetron Sputtering Method,Jpn. Phys. Soc. Conf. Proc (APPC12),Vol.1,pp.015082,2014.03.
25. M. Tateishi, K. Koga, D. Yamashita, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, and the LHD Experimental Group,Spatial Profile of Flux of Dust Particles Generated due to Interaction between Hydrogen Plasmas and Graphite Target,Jpn. Phys. Soc. Conf. Proc (APPC12),Vol.1,pp.015020,2014.03.
26. S. Toko, Y. Kim, Y. Hashimoto, Y. Kanemitu, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, and M. Shiratani,Effects of Grid DC Bias on Incorporation of Si Clusters into Amorphous Silicon Thin Films in Multi-Hollow Discharge Plasma CVD,Jpn. Phys. Soc. Conf. Proc (APPC12),Vol.1,pp.015069,2014.03.
27. X. Dong, R. Torigoe, K. Koga, G. Uchida, M. Shiratani, N. Itagaki, Y. Setsuhara, K. Takenaka, M. Sekine, .M. Hori,Deposition of Carbon Films on PMMA Using H-assisted Plasma CVD,Jpn. Phys. Soc. Conf. Proc (APPC12),Vol.1,pp.015072,2014.03.
28. I. Suhariadi, K. Oshikawa, D. Yamashita, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, and N. Itagaki,Study on the Crystal Growth Mechanism of ZnO Films Fabricated Via Nitrogen Mediated Crystallization,Jpn. Phys. Soc. Conf. Proc (APPC12),Vol.1,pp.015064,2014.03.
29. H. Seo, D. Ichida, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Analysis on the photovoltaic property of Si quantum dot-sensitized solar cells,Int. J. Precision Eng. Manuf.,Vol.15,No.2,pp.339-343,2014.02.
30. Y. Kanemitsu, G. Uchida, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Combinatorial evaluation of optical properties of crystalline Si nanoparticle embedded Si films deposited by a multi-hollow discharge plasma CVD method,Proc. 8th Int. Conf. Reactive Plasmas,pp.6P-AM-S08-P35,2014.02.
31. S. Hashimoto, D. Ichida, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Deposition of Crystalline Ge Nanoparticle Films Varying H2 Dilution Ratio Using High Pressure rf Magnetron Sputtering,Proc. 8th Int. Conf. Reactive Plasmas,pp.6P-AM-S08-P32,2014.02.
32. Y. Torigoe, Y. Hashimoto, S. Toko, Y. Kim, D. Yamashita, H. Seo, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani,Effects of amplitude modulation on deposition of hydrogenated amorphous silicon films using multi-Hollow discharge plasma CVD method,Proc. 8th Int. Conf. Reactive Plasmas,pp.6P-AM-S08-P36,2014.02.
33. D. Ichida, S. Hashimoto, G. Uchida, H. Seo, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Fabrication of size-controlled Ge nanoparticle films varying gas flow rate using high pressure rf magnetron sputtering method,Proc. 8th Int. Conf. Reactive Plasmas,pp.6P-AM-S08-P33,2014.02.
34. Y. Hashimoto, S. Toko, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Substrate temperature dependence of hydrogen content of a-Si:H film deposited with a cluster-eliminating filter,Proc. 8th Int. Conf. Reactive Plasmas,pp.6P-AM-S08-P37,2014.02.
35. Y. Morita, T. Ito, S. Iwashita, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Analysis of fluctuation of Ar metastable density and nanoparticle amount in capacitively coupled discharges with amplitude modulation,Proc. 8th Int. Conf. Reactive Plasmas,pp.5P-AM-S02-P10,2014.02.
36. K. Matsushima, R. Shimizu, T. Ide, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki,Fabrication of In-rich ZnInON filmswith narrow band gap by RF magnetron sputtering,Proc. 8th Int. Conf. Reactive Plasmas,pp.5P-PM-S08-P02,2014.02.
37. S. Toko, Y. Hashimoto, Y. Kanemitu, Y. Torigoe, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Fine response of deposition rate of Si films deposited by multi-hollow discharge plasma CVD with amplitude modulation,Proc. 8th Int. Conf. Reactive Plasmas,pp.5P-AM-S05-P17,2014.02.
38. K. Oshikawa, I. Suhariadi, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, N. Itagaki,Magnetron sputtering of low-resistive In2O3:Sn films with buffer layers fabricated via nitrogen mediated crystallization,Proc. 8th Int. Conf. Reactive Plasmas,pp.5P-PM-S08-P07,2014.02.
39. T. Ito, Y. Morita, S. Iwashita, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Nanoparticle amount in reactive plasmas with amplitude modulation detected by twodimensional laser light scattering method,Proc. 8th Int. Conf. Reactive Plasmas,pp.5P-AM-SPD-P01,2014.02.
40. X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, K. Takenaka, Y. Setsuhara, M. Sekine, M. Hori,Pressure dependence of carbon film deposition using H-assisted plasma CVD,Proc. 8th Int. Conf. Reactive Plasmas,pp.5P-PM-S08-P14,2014.02.
41. D. Yamashita, K. Koga, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani,Raman spectroscopy of a fine particle optically trapped in plasma,Proc. 8th Int. Conf. Reactive Plasmas,pp.5P-AM-S05-P23,2014.02.
42. M. Tateishi, K. Koga, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, the LHD Experimental Group,Spatial profile of flux of dust particles in hydrogen helicon plasmas,Proc. 8th Int. Conf. Reactive Plasmas,pp.5P-AM-S05-P21,2014.02.
43. R. Shimizu, K. Matsushima, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki,Sputtering fabrication of a novel widegap semiconductor ZnGaON for optoelectronic devices with wide bandgap for optical device,Proc. 8th Int. Conf. Reactive Plasmas,pp.5P-PM-S08-P03,2014.02.
44. I. Suhariadi, K. Oshikawa, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki,Study on nitrogen desorption behavior of sputtered ZnO for transparent conducting oxide,Proc. 8th Int. Conf. Reactive Plasmas,pp.5P-PM-S08-P05,2014.02.
45. A. Tanaka, M. Hirata, K. Koga, N. Itagaki, M. Shiratani, N. Hayashi, G. Uchida,Subacute toxicity of gallium arsenide, indium arsenide and arsenic trioxide following intermittent intrantracheal instillations to the lung of rats,Proc. 8th Int. Conf. Reactive Plasmas,pp.5P-AM-S2-P35,2014.02.
46. M. Shiratani, K. Koga, K. Kamataki, S. Iwashita, Y. Morita, H. Seo, N. Itagaki, G. Uchida,A model for correlation between plasma fluctuation and fluctuation of nanoparticle growth in reactive plasmas,Proc. 8th Int. Conf. Reactive Plasmas,pp.4B-PM-O1,2014.02.
47. T. Ide, K. Matsushima, R. Shimizu, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki,Epitaxial growth of ZnO films on sapphire substrates by magnetron sputtering: Effects of buffer layers prepared via nitrogen mediated crystallization,Proc. 8th Int. Conf. Reactive Plasmas,pp.4P-PM-S08-P10,2014.02.
48. G. Uchida, K. Kamataki, D. Ichida, Y. Morita, H. Seo, N. Itagaki, K. Koga, T. Ishihara, M. Shiratani,Fabrication of SiC nanoparticles as high capacity electrodes for Li-ion batteries,Proc. 8th Int. Conf. Reactive Plasmas,pp.4C-PM-O1,2014.02.
49. H. Seo, D. Ichida, G. Uchida, N. Itagaki, K. Koga, M. Shiratani,Quantum characterization and photovoltaic application of Si nano-particles fabricated by multi-hollow plasma discharge chemical vapor deposition,Proc. 8th Int. Conf. Reactive Plasmas,pp.4P-PM-S11-P36,2014.02.
50. K. Koga, Y. Morita, K. Kamataki, D. Yamashita, N. Itagaki, G. Uchida, M. Shiratani,Coupling between radicals and nanoparticles in initial growth phase in reactive plasmas with amplitude modulation (Invited),Proc. 8th Int. Conf. Reactive Plasmas,pp.3B-WS-14,2014.02.
51. T. Nakanishi, K. Oshikawa, I. Suhariadi, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki,Sputter Deposition of Ga-doped Zinc Oxide (GZO) Films with Buffer Layers Fabricated via Nitrogen Mediated Crystallization,Proc. 8th Int. Conf. Reactive Plasmas,pp.5P-AM-S05-P19,2014.02.
52. M. Shiratani, K. Koga, K. Kamataki, S. Iwashita, G. Uchida, H. Seo, and N. Itagaki,Theory for correlation between plasma fluctuation and fluctuation of nanoparticle growth in reactive plasmas,Jpn. J. Appl. Phys. ,Vol.53,No.1,pp.010201,2014.01.
53. G. Uchida, Y. Wang, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Characteristics of Crystalline Silicon/Si Quantum Dot/Poly(3,4-ethylenedioxythiophene) Hybrid Solar Cells,Jpn. J. Appl. Phys. ,Vol.52,pp.11NA05,2013.11.
54. Y. Kim, K. Hatozaki, Y. Hashimoto, G. Uchida, K. Kamataki, N. Itagaki, H. Seo, K. Koga, and M. Shiratani,Correlation between Volume Fraction of Silicon Clusters in Amorphous Silicon Films and Optical Emission Properties of Si and SiH,Jpn. J. Appl. Phys. ,Vol.52,pp.11NA07,2013.11.
55. K. Koga, M. Tateishi, K. Nishiyama, G. Uchida, K. Kamataki, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, Akiko Sagara, the LHD Experimental Group,Flux Control of Carbon Nanoparticles Generated due to Interactions between Hydrogen Plasmas and Graphite Using DC-Biased Substrates,Jpn. J. Appl. Phys. ,Vol.52,pp.11NA08,2013.11.
56. H. Seo, Y. Wang, D. Ichida, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, S. Nam, J. Boo,Improvement on the Electron Transfer of Dye-Sensitized Solar Cell Using Vanadium Doped TiO2,Jpn. J. Appl. Phys.,Vol.52,pp.11NM02,2013.11.
57. K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki,Epitaxial Growth of ZnInON Films with Tunable Band Gap from 1.7 eV to 3.3 eV on ZnO Templates,Jpn. J. Appl. Phys.,Vol.52,pp.11NM06,2013.11.
58. H. Seo, Y. Wang, M. Sato, G. Uchida, K. Koga, N. Itagaki, K. Kamataki, M. Shiratani,The improvement on the performance of quantum dot-sensitized solar cells with functionalized Si,Thin Solid Films,Vol.546,pp.284-288,2013.11.
59. I. Suhariadi, K. Oshikawa, K. Kuwahara, K. Matsushima, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, N. Itagaki,Effects of Nitrogen on Crystal Growth of Sputter-Deposited ZnO Films for Transparent Conducting Oxide,Jpn. J. Appl. Phys. ,Vol.52,pp.11NB03,2013.11.
60. H. Seo, M. Son, H. Kim, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Study on the Fabrication of Paint-Type Si Quantum Dot-Sensitized Solar Cells,Jpn. J. Appl. Phys.,Vol.57,pp.10MB07(5pages) ,2013.10.
61. G. Uchida, M. Sato, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Characteristics of photocurrent generation in the near-ultraviolet region in Si quantum-dot sensitized solar cells,Thin Solid Films,Vol.544,pp.93-98,2013.10.
62. Y. Kim, T. Matsunaga, K. Nakahara, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani,Effects of nanoparticle incorporation on properties of microcrystalline films deposited using multi-hollow discharge plasma CVD,Surf. Coat. Technol.,Vol.228,No.1,pp.S550–S553,2013.08.
63. K. Nishiyama, Y. Morita, G. Uchida, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, K. Koga, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, the LHD Experimental Group, S. Bornholdt, and H. Kersten,Discharge power dependence of carbon dust flux in a divertor simulator,J. Nucl. Mater. ,Vol.438,pp.S788–S791,2013.07.
64. K. Koga, K. Nishiyama, Y. Morita, G. Uchida, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, and the LHD Experimental Group,Effects of DC Substrate Bias Voltage on Dust Flux in the Large Helical Device,J. Nucl. Mater. ,Vol.438,pp.S727–S730,2013.07.
65. Y. Morita, S. Iwashita, D. Yamashita, G. Uchida, K. Kamataki, H. Seo, N. Itagaki, K. Koga, and M. Shiratani,Observation of nanoparticle growth process using a high speed camera,ISPC 21 Proceedings,2013.07.
66. H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Growth control of ZnO nano-rod with various seeds and photovoltaic application,J. Phys. : Conference Series (11th APCPST),Vol.441,No.1,pp.012029,2013.06.
67. H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Analysis on the effect of polysulfide electrolyte composition for higher performance of Si quantum dot-sensitized solar cells,Electrochimica Acta,Vol.95,No.1,pp.43-47,2013.04.
68. S. Bornholdt, N. Itagaki, K. Kuwahara, H. Wulff, M. Shiratani and H. Kersten,Characterization of the energy flux toward the substrate during magnetron sputter deposition of ZnO thin films ,Plasma Sources Sci. Technol.,Vol.22 ,No.2,pp.025019,2013.04.
69. N. Itagaki, K. Oshikawa, K. Matsushima, I. Suhariadi, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani,Crystallinity control of sputtered ZnO films by utilizing buffer layers fabricated via nitrogen mediated crystallization: Effects of nitrogen flow rate,Proc. 13th International Conference on Plasma Surface Engineering,Vol.2,No.26,pp.84-87,2013.03.
70. K. Koga, T. Urakawa, G. Uchida, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani,Control of Deposition Profile and Properties of Plasma CVD Carbon Films,Proc. 13th International Conference on Plasma Surface Engineering,Vol.2,No.26,pp.136-139,2013.03.
71. M. Shiratani, G. Uchida, K. Kamataki, H. Seo, N. Itagaki, K. Koga,Control of nanoparticle formation in reactive plasmas and its application to fabrication of green energy devices,Proc. 13th International Conference on Plasma Surface Engineering,Vol.2,No.26,pp.100-103,2013.03.
72. D. C. Look, K. D. Leedy, A. Kiefer, B. Claflin, N. Itagaki, K. Matsushima, I. Surhariadi,Model for Thickness dependence of mobility and concentration in highly conductive ZnO,Optical Engineering ,Vol.52,No.3,pp.033801,2013.03.
73. H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,The reduction of charge recombination and performance enhancement by the surface modification of Si quantum dot-sensitized solar cell,Electrochimica Acta,Vol.87,No.1,pp.213-217,2013.01.
74. S. Iwashita, K. Nishiyama, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani,Dust particle formation due to interaction between graphite and helicon deuterium plasma,Fusion Engineering and Design,Vol.88,No.1,pp.28-32,2013.01.
75. H. Seo, Y. Wang, M. Sato, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Improvement of Si Adhesion and Reduction of Electron Recombination for Si Quantum Dot-Sensitized Solar Cells,Jpn. J. Appl. Phys. ,Vol.52,No.1,pp.01AD05(5pages),2013.01.
76. Y. Kim, K. Hatozaki, Y. Hashimoto, G. Uchida, K. Kamataki, N. Itagaki, H. Seo, K. Koga, M. Shiratani,High Amount Cluster Incorporation in Initial Si Film Deposition by SiH4 Plasma Chemical Vapor Deposition,Jpn. J. Appl. Phys. ,Vol.52,No.1,pp.01AD01(4pages),2013.01.
77. I. Suhariadi, K. Matsushima, K. Kuwahara, K. Oshikawa, D. Yamashita, H. Seo, G. Uchida, K. Kamtaki, K. Koga, M. Shiratani, S. Bornholdt, H. Kersten, Harm Wulff, N. Itagaki,Effects of Hydrogen Dilution on ZnO Thin Films Fabricated via Nitrogen Mediated Crystallization,Jpn. J. Appl. Phys. ,Vol.52,No.1,pp.01AC08(5pages),2013.01.
78. Y. Kim, T. Matsunaga, K. Nakahara ,G. Uchida, K. Kamataki , N. Itagaki, H. Seo, K. Koga, M. Shiratani ,Effects of crystalline nanoparticle incorporation on growth, structure, and properties of microcrystalline silicon films deposited by plasma CVD ,Thin Solid Films,Vol.523,pp.29-33,2012.11.
79. K. Kamataki, K. Koga, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani,Control of radial density profile of nano-particle produced in reactive plasma by amplitude modulation of rf discharge voltage,Thin Solid Films,Vol.523,pp.76-79,2012.11.
80. N. Itagaki, K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani,Sputter deposition of Epitaxial Zinc-Indium Oxynitride Films for Excitonic Transistors (Invited),Proc. of International Symposium on Dry Process,Vol.34,pp.97-98,2012.11.
81. I. Suhariadi, N. Itagaki, K. Kuwahara, K. Oshikawa, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, K. Nakahara, M. Shiratani,ZnO:Al Thin Films with Buffer Layers Fabricated via Nitrogen Mediated Crystallization: Effects of N2/Ar Gas Flow Rate Ratio,Trans. Mater. Res. Soc. Jpn.,Vol.37,No.2,pp.165-168,2012.06.
82. K. Kuwahara, N. Itagaki, K. Nakahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani,High quality epitaxial ZnO films grown on solid-phase crystallized buffer layers,Thin Solid Films,Vol.520,No.14,pp.4674-4677,2012.05.
83. K. Kamataki, Y. Morita, M. Shiratani, K. Koga, G. Uchida, N. Itagaki ,In situ analysis of size dispersion of nano-particles in reactive plasma using two dimentional laser light scattering method,Journal of Instrumentation,Vol.7,No.4,pp.C04017,2012.04.
84. M. Shiratani, K. Hatozaki, Y. Hashimoto, Y. Kim, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga,Characteristics of stable a-Si:H Schottoky cells fabricated by suppressing cluster deposition,Mat. Res. Soc. Symp. Proc.,Vol.1426,pp.377-382,2012.04.
85. Y. Kim, K. Hatozaki, Y. Hashimoto, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,In-situ Measurements of Cluster Volume Fraction in Silicon Thin Films Using Quartz Crystal Microbalances,Mat. Res. Soc. Symp. Proc.,Vol.1426,pp.307-311,2012.04.
86. H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,The Optical Analysis and Application of Size-controllable Si Quantum Dots Fabricated by Multi-hollow Discharge Plasma Chemical Vapor Deposition,Mat. Res. Soc. Symp. Proc.,Vol.1426,pp.313-318,2012.04.
87. K. Koga, K. Nakahara, Y. Kim, T. Matsunaga, D.Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, and M. Shiratani,Deposition of cluster-free B-doped a-Si:H films using SiH4+B10H14 multi-hollow discharge plasma CVD,Jpn. J. Appl. Phys. ,Vol.51,No.1,pp.01AD03(4pages),2012.01.
88. G. Uchida, K. Yamamoto, M. Sato, Y. Kawashima, K. Nakahara, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Effect of nitridation of Si nano-particles on the performance of quantum-dot sensitized solar cells,Jpn. J. Appl. Phys. ,Vol.51,No.1,pp.01AD01(5pages),2012.01.
89. K. Koga, T. Matsunaga, Y. Kim, K. Nakahara, D. Yamashita, H. Matsuzaki, K. Kamataki, G. Uchida, N. Itagaki, and M. Shiratani,Combinatorial Deposition of Microcrystalline Silicon Films Using Multihollow Discharge Plasma Chemical Vapor Deposition,Jpn. J. Appl. Phys. ,Vol.51,No.1,pp.01AD02(4pages),2012.01.
90. N. Itagaki, K. Kuwahara, K. Matsushima, K. Oshikawa ,Novel fabrication method for ZnO films via nitrogen-mediated crystallization (Invited),Proc. of SPIE photonics west 2012,Vol.8263,pp.826306,2012.01.
91. Y. Wang, M. Sato, T. Matsunaga, N. Itagaki, H. Seo, G. Uchida, K. Koga, M. Shiratani,Properties and performance of si quantum dot-sensitized solar cells with low temperature titania paste,Proc. PVSEC-21,pp.3D-5P-09,2011.11.
92. Y. Wang, M. Sato, H. Seo, G. Uchida, N. Itagaki, K. Koga, M. Shiratani,Performance enhancement of Si quantum dot-sensitized solar cells by surface modification using ZnO barrier layer,Proc. Intern. Symp. on Dry Process,Vol.33,pp.133-134,2011.11.
93. K. Koga, T. Urakawa, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori,Self-organized carbon Mk formation on the top surface of fine trenches using a low temperature plasma anisotropic CVD for depositing fine organic structure,Proc. Plasma Conf. 2011,pp.23G03,2011.11.
94. Y. Wang, M. Sato, H. Seo, G. Uchida, N. Itagaki, K. Koga, M. Shiratani,Effects of electrolyte on performance of quantum dot-sensitized solar cells using Si nanoparticles synthesized by multi-hollow discharge plasma CVD,Proc. Plasma Conf. 2011,pp.23P013-O,2011.11.
95. M. Shiratani, Y. Kim, T. Matsunaga, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga,Effects of nanoparticle incorporation on Si thin films deposited by plasma CVD,Proc. Plasma Conf. 2011,pp.24G06,2011.11.
96. N. Itagaki, K. Kuwahara, K. Nakahara, D. Yamashita, K. Kamataki, H. Seo, G. Uchida, K. Koga, M. Shiratani,Low resistive ZnO:Al films with ZnO buffer layers fabricated by Ar/N2 magnetron sputtering,Proc. Plasma Conf. 2011,pp.24G16,2011.11.
97. K. Nakahara, K. Hatozaki, Y. Hashimoto, T. Matsunaga, M. Sato, D. Yamashita, H. Matsuzaki, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani,Deposition of cluster-free a-Si:H films using cluster eliminating filter,Proc. Plasma Conf. 2011,pp.24P010-O,2011.11.
98. Y. Kim, T. Matsunaga, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani,Radical Flux Evaluation to Microcrystalline Silicon Films Deposited by Multi-Hollow Discharge Plasma CVD,Proc. Plasma Conf. 2011,pp.24P011-O,2011.11.
99. K. Nishiyama, Y. Morita, D. Yamashita, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, the LHD Experimental Group, S. Bornholdt, H. Kersten,Collection of carbon dust particles formed due to plasma-wall interactions between high density H2 plasma and carbon wall onto substrates by applying local DC bias voltage,Proc. Plasma Conf. 2011,pp.24P094-O,2011.11.
100. K. Kamataki, K. Koga, G. Uchida, H. Seo, N. Itagaki, M. Shiratani,Study of interaction between plasma fluctuation and nucleation of nanoparticle in plasma CVD,Proc. Plasma Conf. 2011,pp.24P014-O,2011.11.
101. T. Matsunaga, Y. Kim, K. Koga, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani,Influence of nano-particles on multi-hollow discharge plasma for microcrystalline silicon thin films deposition,Proc. Plasma Conf. 2011,pp.24P015-O,2011.11.
102. K. Hatozaki, K. Nakahara, T. Matsunaga, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani,Deposition of highly stable cluster-free a-Si:H films using fast gas flow multi-hollow discharge plasma CVD method,Proc. Plasma Conf. 2011,pp.24P016-O,2011.11.
103. K. Kuwahara, N. Itagaki, K. Nakahara, D. Yamashita, Seo H., G. Uchida, K. Kamataki, K. Koga, M. Shiratani,Effects of N2 gas addition to sputtering plasma on properties of epitaxial ZnO films,Proc. Plasma Conf. 2011,pp.24P008-O,2011.11.
104. Y. Kim, T. Matsunaga, D. Yamashita, K. Kamataki, N. Itagaki, G. Uchida, K. Koga, M. Shiratani,Combinatorial study on effects of substatrate temperature of silicon film deposition using multi-hollow discharge plasma cvd,Proc. PVSEC-21,pp.3D-2P-09,2011.11.
105. K. Nakahara, K. Hatozaki, M. Sato, T. Matsunaga, D. Yamashita, H. Matsuzaki, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani,Defect density of cluster-free a-si:h films deposited by multi-hollow discharge plasma CVD,Proc. PVSEC-21,pp.3D-2P-20,2011.11.
106. N. Itagaki, K. Kuwahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani,Zinc oxide-based transparent conducting films with buffer layers fabricated via nitrogen-mediated crystallization,Proc. PVSEC-21,pp.4D-2P-10,2011.11.
107. K. Kuwahara, N. Itagaki, K. Nakahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani,Zno films with buffer layers crystallized via nitrogen mediation: Effects of deposition temperature of buffer layers,Proc. PVSEC-21,pp.4D-2P-11,2011.11.
108. T. Matsunaga, Y. Kim, K. Koga, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani,Effects of nano-particles on (220) crystal orientation of microcrystallite silicon thin films,Proc. PVSEC-21,pp.4D-2P-16,2011.11.
109. K. Kamataki, H. Miyata, K. Koga, G. Uchida, N. Itagaki, M. Shiratani,Impacts of Amplitude Modulation of RF Discharge Voltage on the Growth of Nanoparticles in Reactive Plasma,Appl. Phys. Express,Vol.4,No.10,pp.105001(3pages),2011.10.
110. K. Koga, K. Nakahara, Y. Kim, Y. Kawashima, T. Matsunaga, M. Sato, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, and M. Shiratani,Deposition of cluster-free P-doped a-Si:H films using SiH4+PH3 multi-hollow discharge plasma CVD method,Physica Status Solidi (c),Vol.8,No.10,pp.3013-3016,2011.10.
111. G. Uchida, K. Yamamoto, Y. Kawashima, M. Sato, K. Nakahara, K. Kamataki, N. Itagaki, K. Koga, M. Kondo, M. Shiratani,Surface nitridation of silicon nano-particles using double multi-hollow discharge plasma CVD,Physica Status Solidi (c),Vol.8,No.10,pp.3017-3020,2011.10.
112. G. Uchida, Y. Kawashima, K. Yamamoto, M. Sato, K. Nakahara, T. Matsunaga, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Kondo, M. Shiratani,Hybrid sensitized solar cells using Si nanoparticles and ruthenium dye,Physica Status Solidi (c),Vol.8,No.10,pp.3021-3024,2011.10.
113. K. Kamataki, H. Miyata, K. Koga, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani,Impacts of Plasma Fluctuations on Growth of Nano-Particles in Reactive Plasma ,Proc. of International Conference on Phenomena in Ionized Gases(ICPIG) 2011 Conference,pp.D13-318,2011.09.
114. K. Koga, Y. Kawashima, T. Matsunaga, M. Sato, K. Nakahara, W. M. Nakamura, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani,Comparison between silicon thin films with and without incorporating crystalline silicon nanoparticles into the film,Thin Solid Films,Vol.519,No.20,pp.6896-6898,2011.08.
115. Y. Kim, T. Matsunaga, Y. Kawashima, D. Yamashita, K. Kamataki, N. Itagaki, G. Uchida, K. Koga, M. Shiratani,Combinatorial study of substrate temperature dependence on properties of silicon films deposited using multihollow discharge plasma CVD,Proc. of The 20th International Symposium on Plasma Chemistry (ISPC20),pp.POL08,2011.07.
116. M. Shiratani, K. Koga, S. Iwashita, G. Uchida, N. Itagaki, K. Kamataki,Nano-factories in plasma: present status and outlook,J. Phys. D: Appl. Phys.,Vol.44,No.17,pp.174038,2011.05.
117. K. Koga, G. Uchida, K. Yamamoto, Y. Kawashima, M. Sato, K. Kamataki, N. Itagaki, M. Shiratani,Generation and Surface Modification of Si nano-particles using SiH4/H2 and N2 multi-hollow discharges and their application to the third generation photovoltaics,International Conference on Advances in Condensed and Nano Materials (ICACNM),Vol.1393,pp.27-30,2011.02.
118. N. Itagaki, K. Kuwahara, K. Nakahara,Novel Fabrication Method for Transparent Conducting Oxide Films Utilizing Solid-Phase Crystallized Seed Layers,Proc. Int. Conf. Advances in Condensed and Nano Materials 2011,Vol.1393,pp.23-26 ,2011.02.
119. N. Itagaki, K. Kuwahara, K. Nakahara, D. Yamashita, G. Uchida, K. Koga, M. Shiratani,Highly Conducting Very Thin ZnO:Al Films with ZnO Buffer Layer Fabricated by Solid Phase Crystallization from Amorphous Phase,Appl. Phys. Express,Vol.4,No.1,pp.011101-011101-3 ,2011.01.
120. N. Itagaki, K. Kuwahara,Novel fabrication method of ZnO films utilizing solid-phase crystallized seed layers,Mat. Res. Soc. Symp. Proc.,Vol.1315,pp.15-20 ,mrsf10-1315-mm02-09 (6 pages) ,2011.01.
121. M. Shiratani, K. Koga, G. Uchida, N. Itagaki, K. Kamataki,Fluctuation Control for Plasma Nanotechnologies,Proc. IEEE TENCON 2010,pp.XII-XVI ,2010.11.
122. K. Kamataki, H. Miyata, K. Koga, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani,Effects of Amplitude Modulation of rf Discharge Voltage on Growth of Nano-Particles in Reactive Plasma,Proc. IEEE TENCON 2010,pp.1943-1947,2010.11.
123. G. Uchida, S. Nunomutra, H. Miyata, S. Iwashita, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Effects of Ar addition on breakdown voltage in a Si(CH3)2(OCH3)2 RF discharge,Proc. IEEE TENCON 2010,pp.2199-2201,2010.11.
124. K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, K. Yamamoto, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani,Cluster-Free B-Doped a-Si:H Films Deposited Using SiH4 + B10H14 Multi-Hollow Discharges,Proc. IEEE TENCON 2010,pp.2216-2218,2010.11.
125. T. Matsunaga, Y. Kawashima, K. Koga, K. Nakahara, W. M. Nakamura, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani,Deposition profiles of microcrystalline silicon films using multi-hollow discharge plasma CVD,Proc. IEEE TENCON 2010,pp.2219-2212,2010.11.
126. H. Miyata, K. Nishiyama, S. Iwashita, H. Matsuzaki, D. Yamashita, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani,Substrate Temperature Dependence of Sticking Probability of SiOx-CH3 Nano-Particles,Proc. of International Symposium on Dry Process,pp.43-44,P1-A17,2010.11.
127. G. Uchida, M. Sato, Y. Kawashima, K. Yamamoto, K. Nakahara, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, M. Kondo,Optical and Electrical Properties of Particle Composite Thin Films deposited in SiH4/H2 and N2 Multi-Hollow Discharges,Proc. of MNC2010,pp.12D-11-66,2010.11.
128. N. Itagaki,Novel fabrication method for oxide semiconductors via atomic-additive mediated crystallization ,Proc. IEEE TENCON 2010,pp.998-1001,2010.11.
129. K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, K. Yamamoto, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Deposition rate enhancement of cluster-free P-doped a-Si:H films using multi-hollow discharge plasma CVD method,Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma,Vol.55,No.7,pp.CTP.00087,2010.10.
130. T. Matsunaga, Y. Kawashima, K. Koga, W. M. Nakamura, K. Nakahara, H. Matsuzaki, D. Yamashita, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani,Combinatorial deposition of microcrystalline Si films using multi-hollow discharge plasma CVD,Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma,Vol.55,No.7,pp.CTP.00089,2010.10.
131. G. Uchida, M. Sato, Y. Kawashima, K. Nakahara, K. Yamamoto, T. Matsunaga, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Generation of nitridated silicon particles and their thin film deposition using double multi-hollow discharges,Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma,Vol.55,No.7,pp.CTP.00093,2010.10.
132. H. Miyata, K. Nishiyama, S. Iwashita, H. Matsuzaki, D. Yamashita, G. Uchida, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, LHD experimental group,Carbon dust particles generated due to H2 plasma-carbon wall interaction,Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma,Vol.55,No.7,pp.CTP.00114,2010.10.
133. Y. Kawashima, K. Yamamoto, M. Sato, K. Nakahara, T. Matsunaga, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, M. Kondo,Si quantum dot-sensitized solar cells using Si nanoparticles produced by plasma CVD,Proc. 35th IEEE Photovoltaic Specialists Conf.,pp.3347-3351,2010.07.
134. K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, K. Yamamoto, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Deposition of cluster-free P-doped a-Si:H films using a multi-hollow discharge plasma CVD method,Proc. 35th IEEE Photovoltaic Specialists Conf.,pp.3722-3755,2010.07.
135. H. Kumomi, S. Yaginuma, H. Omura, A.Goyal, A. Sato, M. Watanabe, M. Shimada, N. Kaji, K. Takahashi, M. Ofuji, T. Watanabe, N. Itagaki, H. Shimizu, K. Abe, Y. Tateishi, H. Yabuta, T. Iwasaki, R. Hayashi, T. Aiba, M. Sano,Materials, Devices, and Circuits of Transparent Amorphous-Oxide Semiconductor,J. Display Technol.,Vol.5,No.12,pp.531-540,2009.12.
136. A. Goyal, T. Iwasaki, N. Itagaki, T. Den, and H. Kumomi,Favorable Elements for an Indium-based Amorphous-oxide TFT Channel: Study of In-X-O (X=B, Mg, Al, Si, Ti, Zn, Ga, Ge, Mo, Sn) Systems,Mat. Res. Soc. Symp. Proc,Vol.1109,pp.1109-B04-0,2009.05.
137. N. Itagaki, T. Iwasaki, H. Kumomi, T. Den, K. Nomura, T. Kamiya, and H. Hosono,Zn - In - O based thin-film transistors: Compositional dependence,Phys. Stat. Sol. (a),Vol.205,No.8,pp.1915–1919,2008.08.
138. T. Iwasaki, N. Itagaki, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono,,Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system,Appl. Phys. Lett.,Vol.90,No.24,pp.242114,2007.06.
139. C. Niikura, N. Itagaki, Matsuda,Guiding Principles for Obtaining High-Quality Microcrystalline Silicon Growth Rates Using SiH4/H2 Glow-Discharge Plasma,Jpn. J. Appl. Phys.,Vol.46,pp.3052-3058,2007.05.
140. C. Niikura, N. Itagaki, and Matsuda,High rate growth of high-quality microcrystalline silicon films from plasma by interconnected multi-hollow cathode,Surf. Coat. Technol.,Vol.201,No.9-11,pp.5463-5467,2007.02.
141. C. Niikura, N. Itagaki, and A. Matsuda,Guiding Principles for Preparing High Quality Microcrystalline Silicon at High Growth Rates,Trans. Mater. Res. Soc. Jpn.,Vol.31,No.2,pp.503-506,2006.06.
142. T. Iwasaki, N. Itagaki, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono,Combinatorial study on In-Ga-Zn-O semiconductor films as active-channel layers for thin-film transistor,Mat. Res. Soc. Symp. Proc.,Vol.928,pp.80-85,2006.06.
143. N. Itagaki, K. Sasaki, Y. Kawai,Electron temperature measurement in SiH4/H2 ECR plasma produced by 915 MHz microwaves,Thin Solid Films,Vol.506-507,pp.479-484,2006.05.
144. D. Ha Thang, K. Sasaki, H. Muta, N. Itagaki, and Y. Kawai,Characteristics of the plasma parameters in the fabrication of microcrystalline silicon thin films using 915 MHz ECR plasma,Thin Solid Films,Vol.506-507,pp.485-488,2006.05.
145. Y. Kawai, N. Itagaki, M. Koga, and H. Muta,Production of low electron temperature ECR plasma,Surf. Coat. Technol.,Vol.193,No.1-3,pp.11-16,2005.04.
146. H. Muta, D. Ha Thang, N. Itagaki, and Y. Kawai,Investigation of the Plasma Parameters in 915 MHz ECR Plasma with SiH4/H2 Mixtures,Proc. Plasma Sci. Symp. 2005 and the 22th Symp. on plasma processing,pp.521-522,2005.01.
147. N. Itagaki, C. Niikura, A. Matsuda and M. Kondo,Production of high density VHF plasma using a cathode with interconnected multi holes,Proc. Plasma Sci. Symp. 2005 and the 22th Symp. on plasma processing,pp.163-164,2005.01.
148. N. Itagaki, K. Muta, N. Ishii and Y. Kawai,Control of the electron temperature by varying the resonance zone width in ECR plasma,Thin Solid Films,Vol.457,No.1,pp.59-63,2004.06.
149. C. Niikura, N. Itagaki, M. Kondo, Y. Kawai, and Matsuda,High-rate growth of microcrystalline silicon films using a high-density SiH4/H2 glow-discharge plasma,Thin Solid Films,Vol.457,No.1,pp.84-89,2004.06.
150. H. Muta, N. Itagaki, M. Koga, and Y. Kawai,Generation of a low-electron-temperature ECR plasma using mirror magnetic field,Surf. Coat. Technol.,Vol.174-175,pp.152-156,2003.09.
151. N. Itagaki, S. Iwata, K. Muta, A. Yonesu, S. Kawakami, N. Ishii and Y. Kawai,Electron-temperature dependence of nitrogen dissociation in 915 MHz ECR plasma,Thin Solid Films,Vol.435,No.1-2,pp.259-263,2003.07.
152. N. Itagaki, K. Muta, N. Ishii and Y. Kawai,Relationship between the electron temperature and the power absorption profile in ECR plasma,Proc. 16th Intern. Symp. on Plasma Chemistry,pp.Po5.18,2003.06.
153. N. Itagaki, S. Kawakami, N. Ishii and Y. Kawai ,Electron-temperature control in 915 MHz electron cyclotron resonance plasma,J. Vac. Sci. Technol., A,Vol.20,No.6,pp.1969-1973,2002.11.
154. N. Itagaki, S. Kawakami, N. Ishii and Y. Kawai,Production of low-electron-temperature electron cyclotron resonance plasma with large area using 915MHz microwave,Vacuum,Vol.66,No.3-4,pp.323-328,2002.08.
155. H. Muta, N. Itagaki, and Y. Kawai,Numerical investigation of the production mechanism of a low-temperature electron cyclotron resonance plasma,Vacuum,Vol.66,No.3-4,pp.209-214,2002.08.
156. H. Muta, M. Koga, N. Itagaki, and Y. Kawai,Numerical investigation of a low-electron-temperature ECR plasma in Ar/N2 mixtures,Surf. Coat. Technol.,Vol.171,No.1-3,pp.157-161,2002.07.
157. N. Itagaki, S. Iwata, K. Muta, A. Yonesu, S. Kawakami, N. Ishii and Y. Kawai,Behavior of the molecular dissociation in 915 MHz ECR nitrogen plasma,Proc. 5th Intern. Conf. Reactive Plasmas,Vol.1,pp.319-320,2002.07.
158. N. Itagaki, Y. Ueda, N. Ishii and Y. Kawai ,Production of low electron temperature ECR plasma for thin film deposition,Surf. Coat. Technol.,Vol.142-144,pp.546-550,2001.07.
159. N. Itagaki, S. Kawakami, N. Ishii and Y. Kawai,Production of low electron temperature ECR plasma for plasma application,Proc. XXV Intern. Conf. Phenomena in Ionized Gases,pp.137-138,2001.07.
160. N. Itagaki, Y. Ueda, N. Ishii and Y. Kawai,Production of low electron temperature ECR plasma for plasma processing,Thin Solid Films,Vol.390,No.1-2,pp.202-207,2001.06.
161. N. Itagaki, T. Yoshizawa, Y. Ueda and Y. Kawai,Investigation of ECR plasma uniformity from the point of view of production & confinement,Thin Solid Films,Vol.386,No.2,pp.152-159,2001.05.
162. N. Itagaki, Y. Ueda, N. Ishii and Y. Kawai,Production of low-electron-temperature electron cyclotron resonance plasma using nitrogen gas in the mirror magnetic field,Jpn. J. Appl. Phys.,Vol.40,No.4A,pp.2489-2494,2001.04.
163. N. Itagaki, Y. Ueda, N. Ishii and Y. Kawai ,Effect of magnetic-mirror confinement on electron temperature control in ECR plasma,J. Plasma Fusion Res.,Vol.4,pp.305-308,2001.02.
164. N. Itagaki, S. Kawakami, N. Ishii and Y. Kawai,Production of low-electron-temperature ECR plasma using 915 MHz microwave,Proc. Plasma Sci. Symp. 2001 and the 18th Symp. on plasma processing,pp.111-112,2001.01.
165. N. Itagaki, A. Fukuda, T. Yoshizawa, M. Shindo, Y. Ueda and Y. Kawai,Plasma parameter measurements and deposition of a-Si:H thin films in pulsed ECR plasma,Surf. Coat. Technol.,Vol.131,No.1-3,pp.54-57,2000.09.
Presentations
1. Non-equilibrium and extreme state: high-mobility amorphous In2O3:Sn films prepared via nitrogen-mediated amorphization .
2. ZnInON semiconductors for photovoltaic application.
3. Sputtering growth of ZnO based two-dimensional materials by utilizing impurity-mediated crystallization method.
4. Low resistive ZnO:Al films with ZnO buffer layers fabricated by Ar/N2 magnetron sputtering.
Membership in Academic Society
  • Materials Research Society
  • Europian Materials Research Society
  • The Japan Society of Applied Physics