Kyushu University Academic Staff Educational and Research Activities Database
Researcher information
Naho Itagaki Last modified date:2014.7.27

Associate Professor / Division of Electronic Devices
Department of Electronics
Faculty of Information Science and Electrical Engineering


Graduate School
Undergraduate School
Other Organization


E-Mail
Phone
092-642-2111
Academic Degree
Doctor of Science
Field of Specialization
Plasma Science, Inorganic Material Science
Research
Research Interests
  • Fabrication of ultrafast switching devices using excitonic transistor
    keyword : excitonic devices, transistor
    2011.01.
  • Development of alternative rare metal materials for next generation electronic/photonic diveices
    keyword : alternative rare metal, electronic devices, photonic devices
    2010.04.
  • Development of novel fabrication method for oxide semiconductors

    keyword : oxide semiconductor
    2010.04.
Academic Activities
Papers
1. H. Seo, D. Ichida, G. Uchida, N. Itagaki, K. Koga, M. Shiratani,Performance dependence of Si quantum dot-sensitized solar cells on counter electrode,Jpn. J. Appl. Phys. ,Vol.53,No.5S1,pp.05FZ01,2014.05.
2. H. Seo, M. Son, S. Park, M. Jeong, H. Kim, G. Uchida, N. Itagaki, K. Koga, M. Shiratani,Electrochemical impedance analysis on the additional layers for the enhancement on the performance of dye-sensitized solar cell,Thin Solid Films,Vol.554,pp.122-126,2014.03.
3. N. Itagaki, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani,Off-axis sputter deposition of ZnO films on c-sapphire substrates with buffer layers prepared via nitrogen-mediated crystallization,Proc. of SPIE photonics west 2014,Vol.8987,pp.89871A,2014.03.
4. H. Seo, D. Ichida, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Analysis on the photovoltaic property of Si quantum dot-sensitized solar cells,International Journal of Precision Engineering and Manufacturing ,Vol.15,No.2,pp.339-343,2014.02.
5. M. Shiratani, K. Koga, K. Kamataki, S. Iwashita, G. Uchida, H. Seo, and N. Itagaki,Theory for correlation between plasma fluctuation and fluctuation of nanoparticle growth in reactive plasmas,Jpn. J. Appl. Phys. ,Vol.53,No.1,pp.010201,2014.01.
6. G. Uchida, Y. Wang, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Characteristics of Crystalline Silicon/Si Quantum Dot/Poly(3,4-ethylenedioxythiophene) Hybrid Solar Cells,Jpn. J. Appl. Phys. ,Vol.52,pp.11NA05,2013.11.
7. Y. Kim, K. Hatozaki, Y. Hashimoto, G. Uchida, K. Kamataki, N. Itagaki, H. Seo, K. Koga, and M. Shiratani,Correlation between Volume Fraction of Silicon Clusters in Amorphous Silicon Films and Optical Emission Properties of Si and SiH,Jpn. J. Appl. Phys. ,Vol.52,pp.11NA07,2013.11.
8. K. Koga, M. Tateishi, K. Nishiyama, G. Uchida, K. Kamataki, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, Akiko Sagara, the LHD Experimental Group,Flux Control of Carbon Nanoparticles Generated due to Interactions between Hydrogen Plasmas and Graphite Using DC-Biased Substrates,Jpn. J. Appl. Phys. ,Vol.52,pp.11NA08,2013.11.
9. H. Seo, Y. Wang, D. Ichida, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, S. Nam, J. Boo,Improvement on the Electron Transfer of Dye-Sensitized Solar Cell Using Vanadium Doped TiO2,Jpn. J. Appl. Phys.,Vol.52,pp.11NM02,2013.11.
10. K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki,Epitaxial Growth of ZnInON Films with Tunable Band Gap from 1.7 eV to 3.3 eV on ZnO Templates,Jpn. J. Appl. Phys.,Vol.52,pp.11NM06,2013.11.
11. H. Seo, Y. Wang, M. Sato, G. Uchida, K. Koga, N. Itagaki, K. Kamataki, M. Shiratani,The improvement on the performance of quantum dot-sensitized solar cells with functionalized Si,Thin Solid Films,Vol.546,pp.284-288,2013.11.
12. I. Suhariadi, K. Oshikawa, K. Kuwahara, K. Matsushima, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, N. Itagaki,Effects of Nitrogen on Crystal Growth of Sputter-Deposited ZnO Films for Transparent Conducting Oxide,ISPlasma,Vol.52,pp.11NB03,2013.11.
13. H. Seo, M. Son, H. Kim, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Study on the Fabrication of Paint-Type Si Quantum Dot-Sensitized Solar Cells,Jpn. J. Appl. Phys.,Vol.57,pp.10MB07(5pages) ,2013.10.
14. G. Uchida, M. Sato, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Characteristics of Photocurrent Generation in the Near-Ultraviolet Region in Si Quantum-Dot Sensitized Solar Cells,Thin Solid Films,Vol.544,pp.93-98,2013.10.
15. Y. Kim, T. Matsunaga, K. Nakahara, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani,Effects of nanoparticle incorporation on properties of microcrystalline films deposited using multi-hollow discharge plasma CVD,Surf. Coat. Technol.,Vol.228,No.1,pp.S550–S553,2013.08.
16. K. Nishiyama, Y. Morita, G. Uchida, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, K. Koga, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, the LHD Experimental Group, S. Bornholdt, and H. Kersten,Discharge Power Dependence of Carbon Dust Flux in a Divertor Simulator,Journal of Nuclear Materials,Vol.438,pp.S788–S791,2013.07.
17. K. Koga, K. Nishiyama, Y. Morita, G. Uchida, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, and the LHD Experimental Group,Effects of DC Substrate Bias Voltage on Dust Flux in the Large Helical Device,Journal of Nuclear Materials,Vol.438,pp.S727–S730,2013.07.
18. H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Growth control of ZnO nano-rod with various seeds and photovoltaic application,J. Phys. : Conference Series,Vol.441,No.1,pp.012029,2013.06.
19. H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Analysis on the effect of polysulfide electrolyte composition for higher performance of Si quantum dot-sensitized solar cells,Electrochimica Acta,Vol.95,No.1,pp.43-47,2013.04.
20. S. Bornholdt, N. Itagaki, K. Kuwahara, H. Wulff, M. Shiratani and H. Kersten,Characterization of the energy flux toward the substrate during magnetron sputter deposition of ZnO thin films ,Plasma Sources Sci. Technol.,Vol.22 ,No.2,pp.025019,2013.04.
21. D. C. Look, K. D. Leedy, A. Kiefer, B. Claflin, N. Itagaki, K. Matsushima, I. Surhariadi,Model for Thickness dependence of mobility and concentration in highly conductive ZnO,Optical Engineering ,Vol.52,No.3,pp.033801,2013.03.
22. H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,The reduction of charge recombination and performance enhancement by the surface modification of Si quantum dot-sensitized solar cell,Electrochimica Acta,Vol.87,No.1,pp.213-217,2013.01.
23. S. Iwashita, K. Nishiyama, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani,Dust particle formation due to interaction between graphite and helicon deuterium plasma,Fusion Engineering and Design,Vol.88,No.1,pp.28-32,2013.01.
24. H. Seo, Y. Wang, M. Sato, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Improvement of Si Adhesion and Reduction of Electron Recombination for Si Quantum Dot-Sensitized Solar Cells,Jpn. J. Appl. Phys. ,Vol.52,No.1,pp.01AD05(5pages),2013.01.
25. Y. Kim, K. Hatozaki, Y. Hashimoto, G. Uchida, K. Kamataki, N. Itagaki, H. Seo, K. Koga, M. Shiratani,High Amount Cluster Incorporation in Initial Si Film Deposition by SiH4 Plasma Chemical Vapor Deposition,Jpn. J. Appl. Phys. ,Vol.52,No.1,pp.01AD01(4pages),2013.01.
26. I. Suhariadi, K. Matsushima, K. Kuwahara, K. Oshikawa, D. Yamashita, H. Seo, G. Uchida, K. Kamtaki, K. Koga, M. Shiratani, S. Bornholdt, H. Kersten, Harm Wulff, N. Itagaki,Effects of Hydrogen Dilution on ZnO Thin Films Fabricated via Nitrogen Mediated Crystallization,Jpn. J. Appl. Phys. ,Vol.52,No.1,pp.01AC08(5pages),2013.01.
27. Y. Kim, T. Matsunaga, K. Nakahara ,G. Uchida, K. Kamataki , N. Itagaki, H. Seo, K. Koga, M. Shiratani ,Effects of crystalline nanoparticle incorporation on growth, structure, and properties of microcrystalline silicon films deposited by plasma CVD ,Thin Solid Films,Vol.523,pp.29-33,2012.11.
28. K. Kamataki, K. Koga, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani,Control of radial density profile of nano-particle produced in reactive plasma by amplitude modulation of rf discharge voltage,Thin Solid Films,Vol.523,pp.76-79,2012.11.
29. N. Itagaki, K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani,Sputter deposition of Epitaxial Zinc-Indium Oxynitride Films for Excitonic Transistors (Invited),Proc. of International Symposium on Dry Process,Vol.34,pp.97-98,2012.11.
30. I. Suhariadi, N. Itagaki, K. Kuwahara, K. Oshikawa, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, K. Nakahara, M. Shiratani,ZnO:Al Thin Films with Buffer Layers Fabricated via Nitrogen Mediated Crystallization: Effects of N2/Ar Gas Flow Rate Ratio,Transactions of the Materials Research Society of Japan,Vol.37,No.2,pp.165-168,2012.06.
31. K. Kuwahara, N. Itagaki, K. Nakahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani,High quality epitaxial ZnO films grown on solid-phase crystallized buffer layers,Thin Solid Films,Vol.520,No.14,pp.4674-4677,2012.05.
32. K. Kamataki, Y. Morita, M. Shiratani, K. Koga, G. Uchida, N. Itagaki ,In situ analysis of size dispersion of nano-particles in reactive plasma using two dimentional laser light scattering method,Journal of Instrumentation,Vol.7,No.4,pp.C04017,2012.04.
33. K. Koga, K. Nakahara, Y. Kim, T. Matsunaga, D.Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, and M. Shiratani,Deposition of cluster-free B-doped a-Si:H films using SiH4+B10H14 multi-hollow discharge plasma CVD,Jpn. J. Appl. Phys. ,Vol.51,No.1,pp.01AD03(4pages),2012.01.
34. G. Uchida, K. Yamamoto, M. Sato, Y. Kawashima, K. Nakahara, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Effect of nitridation of Si nano-particles on the performance of quantum-dot sensitized solar cells,Jpn. J. Appl. Phys. ,Vol.51,No.1,pp.01AD01(5pages),2012.01.
35. K. Koga, T. Matsunaga, Y. Kim, K. Nakahara, D. Yamashita, H. Matsuzaki, K. Kamataki, G. Uchida, N. Itagaki, and M. Shiratani,Combinatorial Deposition of Microcrystalline Silicon Films Using Multihollow Discharge Plasma Chemical Vapor Deposition,Jpn. J. Appl. Phys. ,Vol.51,No.1,pp.01AD02(4pages),2012.01.
36. N. Itagaki, K. Kuwahara, K. Matsushima, K. Oshikawa ,Novel fabrication method for ZnO films via nitrogen-mediated crystallization (Invited),Proc. of SPIE (International society for optics and photonics) photonics west 2012,Vol.8263,pp.826306,2012.01.
37. N. Itagaki, K. Kuwahara, K. Nakahara, D. Yamashita, K. Kamataki, H. Seo, G. Uchida, K. Koga, M. Shiratani,Low resistive ZnO:Al films with ZnO buffer layers fabricated by Ar/N2 magnetron sputtering,Proc. of Plasma Conference 2011 (PLASMA2011) ,pp.24G16,2011.11.
38. N. Itagaki, K. Kuwahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani,Zinc oxide-based transparent conducting films with buffer layers fabricated via nitrogen-mediated crystallization,Proc. of The 21st International Photovoltaic Science and Engineering Conference (PVSEC-21),pp.4D-2P-10,2011.11.
39. K. Kamataki, H. Miyata, K. Koga, G. Uchida, N. Itagaki, M. Shiratani,Impacts of Amplitude Modulation of RF Discharge Voltage on the Growth of Nanoparticles in Reactive Plasma,Applied Physics Express,Vol.4,No.10,pp.105001(3pages),2011.10.
40. K. Koga, K. Nakahara, Y. Kim, Y. Kawashima, T. Matsunaga, M. Sato, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, and M. Shiratani,Deposition of cluster-free P-doped a-Si:H films using SiH4+PH3 multi-hollow discharge plasma CVD method,Physica Status Solidi (c),Vol.8,No.10,pp.3013-3016,2011.10.
41. G. Uchida, K. Yamamoto, Y. Kawashima, M. Sato, K. Nakahara, K. Kamataki, N. Itagaki, K. Koga, M. Kondo, M. Shiratani,Surface nitridation of silicon nano-particles using double multi-hollow discharge plasma CVD,Physica Status Solidi (c),Vol.8,No.10,pp.3017-3020,2011.10.
42. G. Uchida, Y. Kawashima, K. Yamamoto, M. Sato, K. Nakahara, T. Matsunaga, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Kondo, M. Shiratani,Hybrid sensitized solar cells using Si nanoparticles and ruthenium dye,Physica Status Solidi (c),Vol.8,No.10,pp.3021-3024,2011.10.
43. K. Koga, Y. Kawashima, T. Matsunaga, M. Sato, K. Nakahara, W. M. Nakamura, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani,Comparison between silicon thin films with and without incorporating crystalline silicon nanoparticles into the film,Thin Solid Films,Vol.519,No.20,pp.6896-6898,2011.08.
44. M. Shiratani, K. Koga, S. Iwashita, G. Uchida, N. Itagaki, K. Kamataki,Nano-factories in plasma: present status and outlook,Journal of Physics D: Applied Physics,Vol.44,No.17,pp.174038,2011.05.
45. N. Itagaki, K. Kuwahara, K. Nakahara,Novel Fabrication Method for Transparent Conducting Oxide Films Utilizing Solid-Phase Crystallized Seed Layers,Proc. Int. Conf. Advances in Condensed and Nano Materials 2011,Vol.1393,pp.23-26 ,2011.02.
46. N. Itagaki, K. Kuwahara, K. Nakahara, D. Yamashita, G. Uchida, K. Koga, M. Shiratani,Highly Conducting Very Thin ZnO:Al Films with ZnO Buffer Layer Fabricated by Solid Phase Crystallization from Amorphous Phase,Applied Physics Express,Vol.4,No.1,pp.011101-011101-3 ,2011.01.
47. N. Itagaki, K. Kuwahara,Novel fabrication method of ZnO films utilizing solid-phase crystallized seed layers,Mat. Res. Soc. Symp. Proc.,Vol.1315,pp.15-20 ,mrsf10-1315-mm02-09 (6 pages) ,2011.01.
48. N. Itagaki,Novel fabrication method for oxide semiconductors via atomic-additive mediated crystallization,IEEE Region 10 Conference on TENCON 2010 ,pp.998-1001,2010.11.
49. H. Kumomi, S. Yaginuma, H. Omura, A.Goyal, A. Sato, M. Watanabe, M. Shimada, N. Kaji, K. Takahashi, M. Ofuji, T. Watanabe, N. Itagaki, H. Shimizu, K. Abe, Y. Tateishi, H. Yabuta, T. Iwasaki, R. Hayashi, T. Aiba, M. Sano,Materials, Devices, and Circuits of Transparent Amorphous-Oxide Semiconductor,Vol.5,No.12,pp.531-540,2009.12.
50. N. Itagaki, T. Iwasaki, H. Kumomi, T. Den, K. Nomura, T. Kamiya, and H. Hosono,Zn - In - O based thin-film transistors: Compositional dependence,phys. stat. sol. (a),Vol.205,No.8,pp.1915–1919,2008.08.
51. T. Iwasaki, N. Itagaki, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono,,Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system,Appl. Phys. Lett.,Vol.90,No.24,pp.242114,2007.06.
52. C. Niikura, N. Itagaki, Matsuda,Guiding Principles for Obtaining High-Quality Microcrystalline Silicon Growth Rates Using SiH4/H2 Glow-Discharge Plasma,Jpn. J. Appl. Phys,Vol.46,pp.3052-3058,2007.05.
53. C. Niikura, N. Itagaki, and Matsuda,High rate growth of high-quality microcrystalline silicon films from plasma by interconnected multi-hollow cathode,Surf. Coat. Technol.,Vol.201,No.9-11,pp.5463-5467,2007.02.
54. C. Niikura, N. Itagaki, and A. Matsuda,Guiding Principles for Preparing High Quality Microcrystalline Silicon at High Growth Rates,Trans. Mater. Res. Soc. Jpn.,Vol.31,No.2,pp.503-506,2006.06.
55. N. Itagaki, K. Sasaki, Y. Kawai,Electron temperature measurement in SiH4/H2 ECR plasma produced by 915 MHz microwaves,Thin Solid Films,Vol.506-507,pp.479-484,2006.05.
56. D. Ha Thang, K. Sasaki, H. Muta, N. Itagaki, and Y. Kawai,Characteristics of the plasma parameters in the fabrication of microcrystalline silicon thin films using 915 MHz ECR plasma,Thin Solid Films,Vol.506-507,pp.485-488,2006.05.
57. Y. Kawai, N. Itagaki, M. Koga, and H. Muta,Production of low electron temperature ECR plasma,Surf. Coat. Technol.,Vol.193,No.1-3,pp.11-16,2005.04.
58. N. Itagaki, C. Niikura, A. Matsuda and M. Kondo,Production of high density VHF plasma using a cathode with interconnected multi holes,Proc. Plasma Sci. Symp. 2005 and the 22th Symp. on plasma processing,pp.163-164,2005.01.
59. N. Itagaki, K. Muta, N. Ishii and Y. Kawai,Control of the electron temperature by varying the resonance zone width in ECR plasma,Thin Solid Films,Vol.457,No.1,pp.59-63,2004.06.
60. C. Niikura, N. Itagaki, M. Kondo, Y. Kawai, and Matsuda,High-rate growth of microcrystalline silicon films using a high-density SiH4/H2 glow-discharge plasma,Thin Solid Films,Vol.457,No.1,pp.84-89,2004.06.
61. H. Muta, N. Itagaki, M. Koga, and Y. Kawai,Generation of a low-electron-temperature ECR plasma using mirror magnetic field,Surf. Coat. Technol,Vol.174-175,pp.152-156,2003.09.
62. N. Itagaki, S. Iwata, K. Muta, A. Yonesu, S. Kawakami, N. Ishii and Y. Kawai,Electron-temperature dependence of nitrogen dissociation in 915 MHz ECR plasma,Thin Solid Films,Vol.435,No.1-2,pp.259-263,2003.07.
63. N. Itagaki, K. Muta, N. Ishii and Y. Kawai,Relationship between the electron temperature and the power absorption profile in ECR plasma,Proc. 16th Intern. Symp. on Plasma Chemistry,pp.Po5.18,2003.06.
64. N. Itagaki, S. Kawakami, N. Ishii and Y. Kawai ,Electron-temperature control in 915 MHz electron cyclotron resonance plasma,J. Vac. Sci. Technol., A ,Vol.20,No.6,pp.1969-1973,2002.11.
65. N. Itagaki, S. Kawakami, N. Ishii and Y. Kawai,Production of low-electron temperature ECR plasma with large area using 915 MHz microwave,Vacuum,Vol.66,No.3-4,pp.323-328,2002.08.
66. H. Muta, N. Itagaki, and Y. Kawai,Numerical investigation of the production mechanism of a low-temperature electron cyclotron resonance plasma,Vacuum,Vol.66,No.3-4,pp.209-214,2002.08.
67. H. Muta, M. Koga, N. Itagaki, and Y. Kawai,Numerical investigation of a low-electron-temperature ECR plasma in Ar/N2 mixtures,Surf. Coat. Technol,Vol.171,No.1-3,pp.157-161,2002.07.
68. N. Itagaki, S. Iwata, K. Muta, A. Yonesu, S. Kawakami, N. Ishii and Y. Kawai,Behavior of the molecular dissociation in 915 MHz ECR nitrogen plasma,Proc. 5th Intern. Conf. Reactive Plasmas,Vol.1,pp.319-320,2002.07.
69. N. Itagaki, Y. Ueda, N. Ishii and Y. Kawai ,Production of low electron temperature ECR plasma for thin film deposition,Surf. Coat. Technol.,Vol.142-144,pp.546-550,2001.07.
70. N. Itagaki, S. Kawakami, N. Ishii and Y. Kawai,Production of low electron temperature ECR plasma for plasma application,Proc. XXV Intern. Conf. Phenomena in Ionized Gases,pp.137-138,2001.07.
71. N. Itagaki, Y. Ueda, N. Ishii and Y. Kawai,Production of low electron temperature ECR plasma for plasma processing,Thin Solid Films,Vol.390,No.1-2,pp.202-207,2001.06.
72. N. Itagaki, T. Yoshizawa, Y. Ueda and Y. Kawai,Investigation of ECR plasma uniformity from the point of view of production & confinement,Thin Solid Films,Vol.386,No.2,pp.152-159,2001.05.
73. N. Itagaki, Y. Ueda, N. Ishii and Y. Kawai,Production of low-electron-temperature electron cyclotron resonance plasma using nitrogen gas in the mirror magnetic field,Jpn. J. Appl. Phys,Vol.40,No.4A,pp.2489-2494,2001.04.
74. N. Itagaki, Y. Ueda, N. Ishii and Y. Kawai ,Effect of magnetic-mirror confinement on electron temperature control in ECR plasma,Journal of Plasma and Fusion Research Series,Vol.4,pp.305-308,2001.02.
75. N. Itagaki, S. Kawakami, N. Ishii and Y. Kawai,Production of low-electron-temperature ECR plasma using 915 MHz microwave,Proc. Plasma Sci. Symp. 2001 and the 18th Symp. on plasma processing,pp.111-112,2001.01.
76. N. Itagaki, A. Fukuda, T. Yoshizawa, M. Shindo, Y. Ueda and Y. Kawai,Plasma parameter measurements and deposition of a-Si:H thin films in pulsed ECR plasma,Surf. Coat. Technol.,Vol.131,No.1-3,pp.54-57,2000.09.
Presentations
1. ZnInON semiconductors for photovoltaic application.
Membership in Academic Society
  • Materials Research Society
  • Europian Materials Research Society
  • The Japan Society of Applied Physics