Kyushu University Academic Staff Educational and Research Activities Database
Researcher information
Naho Itagaki Last modified date:2014.1.24

Associate Professor / Division of Electronic Devices
Department of Electronics
Faculty of Information Science and Electrical Engineering


Graduate School
Undergraduate School
Other Organization


E-Mail
Phone
092-642-2111
Academic Degree
Doctor of Science
Field of Specialization
Plasma Science, Inorganic Material Science
Research
Research Interests
  • Fabrication of ultrafast switching devices using excitonic transistor
    keyword : excitonic devices, transistor
    2011.01.
  • Development of alternative rare metal materials for next generation electronic/photonic diveices
    keyword : alternative rare metal, electronic devices, photonic devices
    2010.04.
  • Development of novel fabrication method for oxide semiconductors

    keyword : oxide semiconductor
    2010.04.
Academic Activities
Papers
1. H. Seo, Y. Wang, M. Sato, G. Uchida, K. Koga, N. Itagaki, K. Kamataki, M. Shiratani,The improvement on the performance of quantum dot-sensitized solar cells with functionalized Si,Thin Solid Films,Vol.546,pp.284-288,2013.11.
2. G. Uchida, M. Sato, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Characteristics of Photocurrent Generation in the Near-Ultraviolet Region in Si Quantum-Dot Sensitized Solar Cells,Thin Solid Films,Vol.544,pp.93-98,2013.10.
3. Y. Kim, T. Matsunaga, K. Nakahara, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani,Effects of nanoparticle incorporation on properties of microcrystalline films deposited using multi-hollow discharge plasma CVD,Surf. Coat. Technol.,Vol.228,No.1,pp.S550–S553,2013.08.
4. K. Nishiyama, Y. Morita, G. Uchida, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, K. Koga, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, the LHD Experimental Group, S. Bornholdt, and H. Kersten,Discharge Power Dependence of Carbon Dust Flux in a Divertor Simulator,Journal of Nuclear Materials,Vol.438,pp.S788–S791,2013.07.
5. K. Koga, K. Nishiyama, Y. Morita, G. Uchida, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, and the LHD Experimental Group,Effects of DC Substrate Bias Voltage on Dust Flux in the Large Helical Device,Journal of Nuclear Materials,Vol.438,pp.S727–S730,2013.07.
6. H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Growth control of ZnO nano-rod with various seeds and photovoltaic application,J. Phys. : Conference Series,Vol.441,No.1,pp.012029,2013.06.
7. H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Analysis on the effect of polysulfide electrolyte composition for higher performance of Si quantum dot-sensitized solar cells,Electrochimica Acta,Vol.95,No.1,pp.43-47,2013.04.
8. S. Bornholdt, N. Itagaki, K. Kuwahara, H. Wulff, M. Shiratani and H. Kersten,Characterization of the energy flux toward the substrate during magnetron sputter deposition of ZnO thin films ,Plasma Sources Sci. Technol.,Vol.22 ,No.2,pp.025019,2013.04.
9. D. C. Look, K. D. Leedy, A. Kiefer, B. Claflin, N. Itagaki, K. Matsushima, I. Surhariadi,Model for Thickness dependence of mobility and concentration in highly conductive ZnO,Optical Engineering ,Vol.52,No.3,pp.033801,2013.03.
10. H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,The reduction of charge recombination and performance enhancement by the surface modification of Si quantum dot-sensitized solar cell,Electrochimica Acta,Vol.87,No.1,pp.213-217,2013.01.
11. S. Iwashita, K. Nishiyama, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani,Dust particle formation due to interaction between graphite and helicon deuterium plasma,Fusion Engineering and Design,Vol.88,No.1,pp.28-32,2013.01.
12. H. Seo, Y. Wang, M. Sato, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Improvement of Si Adhesion and Reduction of Electron Recombination for Si Quantum Dot-Sensitized Solar Cells,Jpn. J. Appl. Phys. ,Vol.52,No.1,pp.01AD05(5pages),2013.01.
13. Y. Kim, K. Hatozaki, Y. Hashimoto, G. Uchida, K. Kamataki, N. Itagaki, H. Seo, K. Koga, M. Shiratani,High Amount Cluster Incorporation in Initial Si Film Deposition by SiH4 Plasma Chemical Vapor Deposition,Jpn. J. Appl. Phys. ,Vol.52,No.1,pp.01AD01(4pages),2013.01.
14. I. Suhariadi, K. Matsushima, K. Kuwahara, K. Oshikawa, D. Yamashita, H. Seo, G. Uchida, K. Kamtaki, K. Koga, M. Shiratani, S. Bornholdt, H. Kersten, Harm Wulff, N. Itagaki,Effects of Hydrogen Dilution on ZnO Thin Films Fabricated via Nitrogen Mediated Crystallization,Jpn. J. Appl. Phys. ,Vol.52,No.1,pp.01AC08(5pages),2013.01.
15. K. Kamataki, K. Koga, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani,Control of radial density profile of nano-particle produced in reactive plasma by amplitude modulation of rf discharge voltage,Thin Solid Films,Vol.523,pp.76-79,2012.11.
16. Y. Kim, T. Matsunaga, K. Nakahara ,G. Uchida, K. Kamataki , N. Itagaki, H. Seo, K. Koga, M. Shiratani ,Effects of crystalline nanoparticle incorporation on growth, structure, and properties of microcrystalline silicon films deposited by plasma CVD ,Thin Solid Films,Vol.523,pp.29-33,2012.11.
17. N. Itagaki, K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani,Sputter deposition of Epitaxial Zinc-Indium Oxynitride Films for Excitonic Transistors (Invited),Proc. of International Symposium on Dry Process,2012.11.
18. I. Suhariadi, N. Itagaki, K. Kuwahara, K. Oshikawa, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, K. Nakahara, M. Shiratani,ZnO:Al Thin Films with Buffer Layers Fabricated via Nitrogen Mediated Crystallization: Effects of N2/Ar Gas Flow Rate Ratio,Transactions of the Materials Research Society of Japan,Vol.37,No.2,pp.165-168,2012.06.
19. K. Kuwahara, N. Itagaki, K. Nakahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani,High quality epitaxial ZnO films grown on solid-phase crystallized buffer layers,Thin Solid Films,Vol.520,No.14,pp.4674-4677,2012.05.
20. K. Kamataki, Y. Morita, M. Shiratani, K. Koga, G. Uchida, N. Itagaki ,In situ analysis of size dispersion of nano-particles in reactive plasma using two dimentional laser light scattering method,Journal of Instrumentation,Vol.7,No.4,pp.C04017,2012.04.
21. M. Shiratani, K. Hatozaki, Y. Hashimoto, Y. Kim, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga,Characteristics of stable a-Si:H Schottoky cells fabricated by suppressing cluster deposition,Mat. Res. Soc. Symp. Proc.,Vol.1426,pp.377-382,2012.04.
22. Y. Kim, K. Hatozaki, Y. Hashimoto, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,In-situ Measurements of Cluster Volume Fraction in Silicon Thin Films Using Quartz Crystal Microbalances,Mat. Res. Soc. Symp. Proc.,Vol.1426,pp.307-311,2012.04.
23. H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,The Optical Analysis and Application of Size-controllable Si Quantum Dots Fabricated by Multi-hollow Discharge Plasma Chemical Vapor Deposition,Mat. Res. Soc. Symp. Proc.,Vol.1426,pp.313-318,2012.04.
24. K. Koga, K. Nakahara, Y. Kim, T. Matsunaga, D.Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, and M. Shiratani,Deposition of cluster-free B-doped a-Si:H films using SiH4+B10H14 multi-hollow discharge plasma CVD,Jpn. J. Appl. Phys. ,Vol.51,No.1,pp.01AD03(4pages),2012.01.
25. G. Uchida, K. Yamamoto, M. Sato, Y. Kawashima, K. Nakahara, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Effect of nitridation of Si nano-particles on the performance of quantum-dot sensitized solar cells,Jpn. J. Appl. Phys. ,Vol.51,No.1,pp.01AD01(5pages),2012.01.
26. K. Koga, T. Matsunaga, Y. Kim, K. Nakahara, D. Yamashita, H. Matsuzaki, K. Kamataki, G. Uchida, N. Itagaki, and M. Shiratani,Combinatorial Deposition of Microcrystalline Silicon Films Using Multihollow Discharge Plasma Chemical Vapor Deposition,Jpn. J. Appl. Phys. ,Vol.51,No.1,pp.01AD02(4pages),2012.01.
27. N. Itagaki, K. Kuwahara, K. Matsushima, K. Oshikawa ,Novel fabrication method for ZnO films via nitrogen-mediated crystallization (Invited),Proc. of SPIE (International society for optics and photonics) photonics west 2012,Vol.8263,pp.826306,2012.01.
28. Y. Kim, T. Matsunaga, D. Yamashita, K. Kamataki, N. Itagaki, G. Uchida, K. Koga, M. Shiratani,Combinatorial study on effects of substatrate temperature of silicon film deposition using multi-hollow discharge plasma cvd,Proc. of The 21st International Photovoltaic Science and Engineering Conference (PVSEC-21),pp.3D-2P-09,2011.11.
29. K. Nakahara, K. Hatozaki, M. Sato, T. Matsunaga, D. Yamashita, H. Matsuzaki, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani,Defect density of cluster-free a-si:h films deposited by multi-hollow discharge plasma CVD,Proc. of The 21st International Photovoltaic Science and Engineering Conference (PVSEC-21),pp.3D-2P-20,2011.11.
30. Y. Wang, M. Sato, T. Matsunaga, N. Itagaki, H. Seo, G. Uchida, K. Koga, M. Shiratani,Properties and performance of si quantum dot-sensitized solar cells with low temperature titania paste,Proc. of The 21st International Photovoltaic Science and Engineering Conference (PVSEC-21),pp.3D-5P-09,2011.11.
31. N. Itagaki, K. Kuwahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani,Zinc oxide-based transparent conducting films with buffer layers fabricated via nitrogen-mediated crystallization,Proc. of The 21st International Photovoltaic Science and Engineering Conference (PVSEC-21),pp.4D-2P-10,2011.11.
32. K. Kuwahara, N. Itagaki, K. Nakahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani,Zno films with buffer layers crystallized via nitrogen mediation: Effects of deposition temperature of buffer layers,Proc. of The 21st International Photovoltaic Science and Engineering Conference (PVSEC-21),pp.4D-2P-11,2011.11.
33. T. Matsunaga, Y. Kim, K. Koga, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani,Effects of nano-particles on (220) crystal orientation of microcrystallite silicon thin films,Proc. of The 21st International Photovoltaic Science and Engineering Conference (PVSEC-21),pp.4D-2P-16,2011.11.
34. Y. Wang, M. Sato, H. Seo, G. Uchida, N. Itagaki, K. Koga, M. Shiratani,Performance enhancement of Si quantum dot-sensitized solar cells by surface modification using ZnO barrier layer,Proc. of The 33rd International Symposium on Dry Process,Vol.33,pp.133-134,2011.11.
35. K. Koga, T. Urakawa, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori,Self-organized carbon Mk formation on the top surface of fine trenches using a low temperature plasma anisotropic CVD for depositing fine organic structure,Proc. of Plasma Conference 2011 (PLASMA2011) ,pp.23G03,2011.11.
36. Y. Wang, M. Sato, H. Seo, G. Uchida, N. Itagaki, K. Koga, M. Shiratani,Effects of electrolyte on performance of quantum dot-sensitized solar cells using Si nanoparticles synthesized by multi-hollow discharge plasma CVD,Proc. of Plasma Conference 2011 (PLASMA2011) ,pp.23P013-O,2011.11.
37. M. Shiratani, Y. Kim, T. Matsunaga, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga,Effects of nanoparticle incorporation on Si thin films deposited by plasma CVD,Proc. of Plasma Conference 2011 (PLASMA2011) ,pp.24G06,2011.11.
38. N. Itagaki, K. Kuwahara, K. Nakahara, D. Yamashita, K. Kamataki, H. Seo, G. Uchida, K. Koga, M. Shiratani,Low resistive ZnO:Al films with ZnO buffer layers fabricated by Ar/N2 magnetron sputtering,Proc. of Plasma Conference 2011 (PLASMA2011) ,pp.24G16,2011.11.
39. K. Nakahara, K. Hatozaki, Y. Hashimoto, T. Matsunaga, M. Sato, D. Yamashita, H. Matsuzaki, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani,Deposition of cluster-free a-Si:H films using cluster eliminating filter,Proc. of Plasma Conference 2011 (PLASMA2011) ,pp.24P010-O,2011.11.
40. Y. Kim, T. Matsunaga, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani,Radical Flux Evaluation to Microcrystalline Silicon Films Deposited by Multi-Hollow Discharge Plasma CVD,Proc. of Plasma Conference 2011 (PLASMA2011) ,pp.24P011-O,2011.11.
41. K. Nishiyama, Y. Morita, D. Yamashita, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, the LHD Experimental Group, S. Bornholdt, H. Kersten,Collection of carbon dust particles formed due to plasma-wall interactions between high density H2 plasma and carbon wall onto substrates by applying local DC bias voltage,Proc. of Plasma Conference 2011 (PLASMA2011) ,pp.24P094-O,2011.11.
42. K. Kamataki, K. Koga, G. Uchida, H. Seo, N. Itagaki, M. Shiratani,Study of interaction between plasma fluctuation and nucleation of nanoparticle in plasma CVD,Proc. of Plasma Conference 2011 (PLASMA2011) ,pp.24P014-O,2011.11.
43. T. Matsunaga, Y. Kim, K. Koga, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani,Influence of nano-particles on multi-hollow discharge plasma for microcrystalline silicon thin films deposition,Proc. of Plasma Conference 2011 (PLASMA2011) ,pp.24P015-O,2011.11.
44. K. Hatozaki, K. Nakahara, T. Matsunaga, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani,Deposition of highly stable cluster-free a-Si:H films using fast gas flow multi-hollow discharge plasma CVD method,Proc. of Plasma Conference 2011 (PLASMA2011) ,pp.24P016-O,2011.11.
45. K. Kuwahara, N. Itagaki, K. Nakahara, D. Yamashita, Seo H., G. Uchida, K. Kamataki, K. Koga, M. Shiratani,Effects of N2 gas addition to sputtering plasma on properties of epitaxial ZnO films,Proc. of Plasma Conference 2011 (PLASMA2011) ,pp.24P008-O,2011.11.
46. K. Kamataki, H. Miyata, K. Koga, G. Uchida, N. Itagaki, M. Shiratani,Impacts of Amplitude Modulation of RF Discharge Voltage on the Growth of Nanoparticles in Reactive Plasma,Applied Physics Express,Vol.4,No.10,pp.105001(3pages),2011.10.
47. K. Koga, K. Nakahara, Y. Kim, Y. Kawashima, T. Matsunaga, M. Sato, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, and M. Shiratani,Deposition of cluster-free P-doped a-Si:H films using SiH4+PH3 multi-hollow discharge plasma CVD method,Physica Status Solidi (c),Vol.8,No.10,pp.3013-3016,2011.10.
48. G. Uchida, K. Yamamoto, Y. Kawashima, M. Sato, K. Nakahara, K. Kamataki, N. Itagaki, K. Koga, M. Kondo, M. Shiratani,Surface nitridation of silicon nano-particles using double multi-hollow discharge plasma CVD,Physica Status Solidi (c),Vol.8,No.10,pp.3017-3020,2011.10.
49. G. Uchida, Y. Kawashima, K. Yamamoto, M. Sato, K. Nakahara, T. Matsunaga, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Kondo, M. Shiratani,Hybrid sensitized solar cells using Si nanoparticles and ruthenium dye,Physica Status Solidi (c),Vol.8,No.10,pp.3021-3024,2011.10.
50. K. Kamataki, H. Miyata, K. Koga, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani,Impacts of Plasma Fluctuations on Growth of Nano-Particles in Reactive Plasma ,Proc. of International Conference on Phenomena in Ionized Gases(ICPIG) 2011 Conference,pp.D13-318,2011.09.
51. K. Koga, Y. Kawashima, T. Matsunaga, M. Sato, K. Nakahara, W. M. Nakamura, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani,Comparison between silicon thin films with and without incorporating crystalline silicon nanoparticles into the film,Thin Solid Films,Vol.519,No.20,pp.6896-6898,2011.08.
52. Y. Kim, T. Matsunaga, Y. Kawashima, D. Yamashita, K. Kamataki, N. Itagaki, G. Uchida, K. Koga, M. Shiratani,Combinatorial study of substrate temperature dependence on properties of silicon films deposited using multihollow discharge plasma CVD,Proc. of The 20th International Symposium on Plasma Chemistry (ISPC20),pp.POL08,2011.07.
53. M. Shiratani, K. Koga, S. Iwashita, G. Uchida, N. Itagaki, K. Kamataki,Nano-factories in plasma: present status and outlook,Journal of Physics D: Applied Physics,Vol.44,No.17,pp.174038,2011.05.
54. K. Koga, G. Uchida, K. Yamamoto, Y. Kawashima, M. Sato, K. Kamataki, N. Itagaki, M. Shiratani,Generation and Surface Modification of Si nano-particles using SiH4/H2 and N2 multi-hollow discharges and their application to the third generation photovoltaics,International Conference on Advances in Condensed and Nano Materials (ICACNM),Vol.1393,pp.27-30,2011.02.
55. N. Itagaki, K. Kuwahara, K. Nakahara,Novel Fabrication Method for Transparent Conducting Oxide Films Utilizing Solid-Phase Crystallized Seed Layers,Proc. Int. Conf. Advances in Condensed and Nano Materials 2011,Vol.1393,pp.23-26 ,2011.02.
56. N. Itagaki, K. Kuwahara, K. Nakahara, D. Yamashita, G. Uchida, K. Koga, M. Shiratani,Highly Conducting Very Thin ZnO:Al Films with ZnO Buffer Layer Fabricated by Solid Phase Crystallization from Amorphous Phase,Applied Physics Express,Vol.4,No.1,pp.011101-011101-3 ,2011.01.
57. N. Itagaki, K. Kuwahara,Novel fabrication method of ZnO films utilizing solid-phase crystallized seed layers,Mat. Res. Soc. Symp. Proc.,Vol.1315,pp.15-20 ,mrsf10-1315-mm02-09 (6 pages) ,2011.01.
58. M. Shiratani, K. Koga, G. Uchida, N. Itagaki, K. Kamataki,Fluctuation Control for Plasma Nanotechnologies,IEEE Region 10 Conference on TENCON 2010 ,pp.XII-XVI ,2010.11.
59. K. Kamataki, H. Miyata, K. Koga, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani,Effects of Amplitude Modulation of rf Discharge Voltage on Growth of Nano-Particles in Reactive Plasma,IEEE Region 10 Conference on TENCON 2010 ,pp.1943-1947,2010.11.
60. G. Uchida, S. Nunomutra, H. Miyata, S. Iwashita, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Effects of Ar addition on breakdown voltage in a Si(CH3)2(OCH3)2 RF discharge,IEEE Region 10 Conference on TENCON 2010 ,pp.2199-2201,2010.11.
61. K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, K. Yamamoto, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani,Cluster-Free B-Doped a-Si:H Films Deposited Using SiH4 + B10H14 Multi-Hollow Discharges,IEEE Region 10 Conference on TENCON 2010 ,pp.2216-2218,2010.11.
62. T. Matsunaga, Y. Kawashima, K. Koga, K. Nakahara, W. M. Nakamura, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani,Deposition profiles of microcrystalline silicon films using multi-hollow discharge plasma CVD,IEEE Region 10 Conference on TENCON 2010 ,pp.2219-2212,2010.11.
63. N. Itagaki,Novel fabrication method for oxide semiconductors
via atomic-additive mediated crystallization
,IEEE Region 10 Conference on TENCON 2010 ,pp.998-1001,2010.11.
64. H. Miyata, K. Nishiyama, S. Iwashita, H. Matsuzaki, D. Yamashita, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani,Substrate Temperature Dependence of Sticking Probability of SiOx-CH3 Nano-Particles,Proc. of International Symposium on Dry Process,pp.43-44,P1-A17,2010.11.
65. G. Uchida, M. Sato, Y. Kawashima, K. Yamamoto, K. Nakahara, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, M. Kondo,Optical and Electrical Properties of Particle Composite Thin Films deposited in SiH4/H2 and N2 Multi-Hollow Discharges,Proc. of MNC2010 (第23回マイクロプロセス・ナノテクノロジー国際会議),pp.12D-11-66,2010.11.
66. K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, K. Yamamoto, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Deposition rate enhancement of cluster-free P-doped a-Si:H films using multi-hollow discharge plasma CVD method,Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma,Vol.55,No.7,pp.CTP.00087,2010.10.
67. T. Matsunaga, Y. Kawashima, K. Koga, W. M. Nakamura, K. Nakahara, H. Matsuzaki, D. Yamashita, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani,Combinatorial deposition of microcrystalline Si films using multi-hollow discharge plasma CVD,Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma,Vol.55,No.7,pp.CTP.00089,2010.10.
68. G. Uchida, M. Sato, Y. Kawashima, K. Nakahara, K. Yamamoto, T. Matsunaga, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Generation of nitridated silicon particles and their thin film deposition using double multi-hollow discharges,Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma,Vol.55,No.7,pp.CTP.00093,2010.10.
69. H. Miyata, K. Nishiyama, S. Iwashita, H. Matsuzaki, D. Yamashita, G. Uchida, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, LHD experimental group,Carbon dust particles generated due to H2 plasma-carbon wall interaction,Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma,Vol.55,No.7,pp.CTP.00114,2010.10.
70. Y. Kawashima, K. Yamamoto, M. Sato, K. Nakahara, T. Matsunaga, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, M. Kondo,Si quantum dot-sensitized solar cells using Si nanoparticles produced by plasma CVD,Proc. 35th IEEE Photovoltaic Specialists Conf.,pp.3347-3351,2010.07.
71. K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, K. Yamamoto, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani,Deposition of cluster-free P-doped a-Si:H films using a multi-hollow discharge plasma CVD method,Proc. of 35th IEEE Photovoltaic Specialists Conference ,pp.3722-3755,2010.07.
72. H. Kumomi, S. Yaginuma, H. Omura, A.Goyal, A. Sato, M. Watanabe, M. Shimada, N. Kaji, K. Takahashi, M. Ofuji, T. Watanabe, N. Itagaki, H. Shimizu, K. Abe, Y. Tateishi, H. Yabuta, T. Iwasaki, R. Hayashi, T. Aiba, M. Sano,Materials, Devices, and Circuits of Transparent Amorphous-Oxide Semiconductor,J. Display Technol.,Vol.5,No.12,pp.531-540,2009.12.
73. A. Goyal, T. Iwasaki, N. Itagaki, T. Den, and H. Kumomi,Favorable Elements for an Indium-based Amorphous-oxide TFT Channel: Study of In-X-O (X=B, Mg, Al, Si, Ti, Zn, Ga, Ge, Mo, Sn) Systems,Mat. Res. Soc. Symp. Proc.,Vol.1109,pp.1109-B04-0,2009.05.
74. N. Itagaki, T. Iwasaki, H. Kumomi, T. Den, K. Nomura, T. Kamiya, and H. Hosono,Zn - In - O based thin-film transistors: Compositional dependence,Physica Status Solidi (a),Vol.205,No.8,pp.1915–1919,2008.08.
75. T. Iwasaki, N. Itagaki, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono,,Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system,Appl. Phys. Lett.,Vol.90,No.24,pp.242114,2007.06.
76. C. Niikura, N. Itagaki, Matsuda,Guiding Principles for Obtaining High-Quality Microcrystalline Silicon Growth Rates Using SiH4/H2 Glow-Discharge Plasma,Jpn. J. Appl. Phys.,Vol.46,pp.3052-3058,2007.05.
77. C. Niikura, N. Itagaki, and Matsuda,High rate growth of high-quality microcrystalline silicon films from plasma by interconnected multi-hollow cathode,Surf. Coat. Technol.,Vol.201,No.9-11,pp.5463-5467,2007.02.
78. C. Niikura, N. Itagaki, and A. Matsuda,Guiding Principles for Preparing High Quality Microcrystalline Silicon at High Growth Rates,Trans. Mater. Res. Soc. Jpn.,Vol.31,No.2,pp.503-506,2006.06.
79. T. Iwasaki, N. Itagaki, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono,Combinatorial study on In-Ga-Zn-O semiconductor films as active-channel layers for thin-film transistor,Mat. Res. Soc. Symp. Proc.,Vol.928,pp.80-85,2006.06.
80. N. Itagaki, K. Sasaki, Y. Kawai,Electron temperature measurement in SiH4/H2 ECR plasma produced by 915 MHz microwaves,Thin Solid Films,Vol.506-507,pp.479-484,2006.05.
81. D. Ha Thang, K. Sasaki, H. Muta, N. Itagaki, and Y. Kawai,Characteristics of the plasma parameters in the fabrication of microcrystalline silicon thin films using 915 MHz ECR plasma,Thin Solid Films,Vol.506-507,pp.485-488,2006.05.
82. Y. Kawai, N. Itagaki, M. Koga, and H. Muta,Production of low electron temperature ECR plasma,Surf. Coat. Technol.,Vol.193,No.1-3,pp.11-16,2005.04.
83. H. Muta, D. Ha Thang, N. Itagaki, and Y. Kawai,Investigation of the Plasma Parameters in 915 MHz ECR Plasma with SiH4/H2 Mixtures,Proc. Plasma Sci. Symp. 2005 and the 22th Symp. on plasma processing,pp.521-522,2005.01.
84. N. Itagaki, C. Niikura, A. Matsuda and M. Kondo,Production of high density VHF plasma using a cathode with interconnected multi holes,Proc. Plasma Sci. Symp. 2005 and the 22th Symp. on plasma processing,pp.163-164,2005.01.
85. N. Itagaki, K. Muta, N. Ishii and Y. Kawai,Control of the electron temperature by varying the resonance zone width in ECR plasma,Thin Solid Films,Vol.457,No.1,pp.59-63,2004.06.
86. C. Niikura, N. Itagaki, M. Kondo, Y. Kawai, and Matsuda,High-rate growth of microcrystalline silicon films using a high-density SiH4/H2 glow-discharge plasma,Thin Solid Films,Vol.457,No.1,pp.84-89,2004.06.
87. H. Muta, N. Itagaki, M. Koga, and Y. Kawai,Generation of a low-electron-temperature ECR plasma using mirror magnetic field,Surf. Coat. Technol.,Vol.174-175,pp.152-156,2003.09.
88. N. Itagaki, S. Iwata, K. Muta, A. Yonesu, S. Kawakami, N. Ishii and Y. Kawai,Electron-temperature dependence of nitrogen dissociation in 915 MHz ECR plasma,Thin Solid Films,Vol.435,No.1-2,pp.259-263,2003.07.
89. N. Itagaki, K. Muta, N. Ishii and Y. Kawai,Relationship between the electron temperature and the power absorption profile in ECR plasma,Proc. 16th Intern. Symp. on Plasma Chemistry,pp.Po5.18,2003.06.
90. N. Itagaki, S. Kawakami, N. Ishii and Y. Kawai ,Electron-temperature control in 915 MHz electron cyclotron resonance plasma,J. Vac. Sci. Technol., A,Vol.20,No.6,pp.1969-1973,2002.11.
91. N. Itagaki, S. Kawakami, N. Ishii and Y. Kawai,Production of low-electron temperature ECR plasma with large area using 915 MHz microwave,Vacuum,Vol.66,No.3-4,pp.323-328,2002.08.
92. H. Muta, N. Itagaki, and Y. Kawai,Numerical investigation of the production mechanism of a low-temperature electron cyclotron resonance plasma,Vacuum,Vol.66,No.3-4,pp.209-214,2002.08.
93. N. Itagaki, S. Iwata, K. Muta, A. Yonesu, S. Kawakami, N. Ishii and Y. Kawai,Behavior of the molecular dissociation in 915 MHz ECR nitrogen plasma,Proc. 5th Intern. Conf. Reactive Plasmas,Vol.1,pp.319-320,2002.07.
94. H. Muta, M. Koga, N. Itagaki, and Y. Kawai,Numerical investigation of a low-electron-temperature ECR plasma in Ar/N2 mixtures,Surf. Coat. Technol.,Vol.171,No.1-3,pp.157-161,2002.07.
95. N. Itagaki, S. Kawakami, N. Ishii and Y. Kawai,Production of low electron temperature ECR plasma for plasma application,Proc. XXV Intern. Conf. Phenomena in Ionized Gases,pp.137-138,2001.07.
96. N. Itagaki, Y. Ueda, N. Ishii and Y. Kawai ,Production of low electron temperature ECR plasma for thin film deposition,Surf. Coat. Technol.,Vol.142-144,pp.546-550,2001.07.
97. N. Itagaki, Y. Ueda, N. Ishii and Y. Kawai,Production of low electron temperature ECR plasma for plasma processing,Thin Solid Films,Vol.390,No.1-2,pp.202-207,2001.06.
98. N. Itagaki, T. Yoshizawa, Y. Ueda and Y. Kawai,Investigation of ECR plasma uniformity from the point of view of production & confinement,Thin Solid Films,Vol.386,No.2,pp.152-159,2001.05.
99. N. Itagaki, Y. Ueda, N. Ishii and Y. Kawai,Production of low-electron-temperature electron cyclotron resonance plasma using nitrogen gas in the mirror magnetic field,Jpn. J. Appl. Phys.,Vol.40,No.4A,pp.2489-2494,2001.04.
100. N. Itagaki, Y. Ueda, N. Ishii and Y. Kawai ,Effect of magnetic-mirror confinement on electron temperature control in ECR plasma,J. Plasma Fusion Res.,Vol.4,pp.305-308,2001.02.
101. N. Itagaki, S. Kawakami, N. Ishii and Y. Kawai,Production of low-electron-temperature ECR plasma using 915 MHz microwave,Proc. Plasma Sci. Symp. 2001 and the 18th Symp. on plasma processing,pp.111-112,2001.01.
102. N. Itagaki, A. Fukuda, T. Yoshizawa, M. Shindo, Y. Ueda and Y. Kawai,Plasma parameter measurements and deposition of a-Si:H thin films in pulsed ECR plasma,Surf. Coat. Technol.,Vol.131,No.1-3,pp.54-57,2000.09.
Presentations
1. Fabrication of highly stable a-Si:H PIN solar cells using cluster suppression method.
2. Low resistive ZnO:Al films with ZnO buffer layers fabricated by Ar/N2 magnetron sputtering.
3. Deposition of SiOx-CH3 nano-particles on fine pattern substrate.
4. Evaluation of the flux of carbon particles generated plasma-carbon wall interaction to substrates.
5. Current density-voltage characteristics of the sensitized solar cell
using Si nanoparticles and Ru dye
.
6. Fabrication of surface-nitrided Si particles by double multi-hollow discharges.
7. Conductivity of P-doped a-Si:H films deposited using multi-hollow plasma CVD.
8. Preparation of microcrystalline silicon films under high gas pressure condition.
9. Deposition of nano-particles onto micro trench substrates.
10. Mapping of crystallinity of ?c-Si thin films deposited under high gas pressure.
11. Deposition of B-doped a-Si:H using by SiH4+ B10H14 multi-hollow discharge plasma CVD.
12. Fabrication of surface nitrided Si particles applying double multi-hollow discharge plasma.
13. Surface nitridation of silicon particles by double multi-hollow discharges.
14. Deposition of B doped a-Si:H using SiH4+ B0H4 multi-hollow discharge plasma CVD.
15. 2-dimensional mapping of crysallinity of μc-Si films deposited under high gas pressure.
16. Effects of Discharge Power Fluctuation on Growth of Nano-Particles in Reactive Plasmas
.
17. Effects of wall potential on flux of dust particles generated due to Interaction between H plasmas and graphite.
18. Light intensity dependence of photo current of nano-particle sensitized solar cells.
Membership in Academic Society
  • Materials Research Society
  • Europian Materials Research Society
  • The Japan Society of Applied Physics