九州大学 研究者情報
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基本情報 研究活動 教育活動 社会活動
板垣 奈穂(いたがき なほ) データ更新日:2018.06.06

准教授 /  システム情報科学研究院 情報エレクトロニクス部門 電子デバイス工学


主な研究テーマ
次世代型・超高速エキシトニクストランジスタの創成
キーワード:エキシトニクス、トランジスタ
2011.01.
レアメタルフリー環境低負荷型電子・光デバイスの創成
キーワード:レアメタル代替、電子デバイス、光デバイス、低環境負荷
2010.04.
高品質酸化物半導体薄膜の新規生成法の開発

キーワード:酸化物半導体
2010.04.
従事しているプロジェクト研究
スパッタエピタキシーによる革新的エキシトンデバイスの実現と励起子輸送機構の解明の研究
2018.04~2022.03, 代表者:板垣奈穂, 九州大学, 文科省
科研費・基盤B.
光電子集積回路を実現する革新的エキシトニクスデバイスの創製
2017.11~2022.03, 代表者:板垣奈穂, 九州大学, NTT
NTT-九州大学基礎科学共同研究プログラム.
フラックス制御スパッタによる高品質酸窒化物の創製と新概念光スイッチへの応用
2015.04~2018.03, 代表者:板垣奈穂, 九州大学, 文科省
科研費若手A.
酸窒化物超格子のピエゾ電界を利用した室温動作エキシトニクスデバイスの創成
2013.04~2015.03, 代表者:板垣奈穂, 九州大学, 日本学術振興会.
スパッタリングプラズマ中の熱フラックス制御による高品質酸化膜の作製
2011.07, 代表者:板垣奈穂, 九州大学, 九州大学(日本),キール大学(独),グライフスヴァルト大(独).
高品質ZnO薄膜の形成とそのキャリア伝導機構の解明
2013.08, 代表者:板垣奈穂, 九州大学, 九州大学(日本),ライト州立大(米国).
JST 戦略的創造研究推進事業(さきがけ), 研究領域「太陽光と光電変換機能」: 新規酸窒化物を用いたピエゾ電界誘起量子井戸型太陽電池の創製
2011.10~2015.03, 代表者:板垣奈穂, 九州大学, JST.
プラズマナノマテリアル動態学の創成
2012.04~2014.10, 代表者:田中昭代, 九州大学, 日本学術振興会.
ナノ粒子制御によるa-Siセルの高光安定化に関する研究
2010.10~2012.03, 代表者:白谷正治, 九州大学, NEDO太陽光発電技術組合.
ナノ粒子含有プラズマによるナノ界面ボンドエンジニアリングの創生
2010.04~2013.03, 代表者:白谷正治, 九州大学.
研究業績
主要著書
1. 板垣 奈穂, 可視領域でバンドギャップチューニング可能な新材料ZIONの開発と太陽電池への応用(太陽光と光電変換機能―異分野融合から生まれる次世代太陽電池―), シーエムシー出版, 第1章, 2, 2016.02, [URL].
主要原著論文
1. H. Seo, D. Sakamoto, H. Chou, N. Itagaki, K. Koga, M. Shiratani , Progress in photovoltaic performance of organic/inorganic hybrid solar cell based on optimal resistive Si and solvent modified poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) junction, Progress in Photovoltaics: Research and Applications, 2, 145-150, 26, 2018.02, [URL].
2. T. Fang, K. Yamaki, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, K. Takenaka,Y. Setsuhara, The effect of the H2/(H2+Ar) flow-rate ratio on hydrogenated amorphous carbon films grown using Ar/H2/C7H8 plasma chemical vapor deposition, Thin Solid Films, [URL].
3. T. Kojima, S. Toko, K. Tanaka, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Effects of gas velocity on deposition rate and amount of cluster incorporation into a-Si:H films fabricated by SiH4 plasma chemical vapor deposition, Plasma Fusion Res..
4. R. Zhou, K. Mori, H. Ohtomo, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Spatial correlation between density fluctuations of high energy electrons and nanoparticles in amplitude modulated capactively coupled plasma, J. Phys. Conf Ser..
5. K. Imoto, H. Wang, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Room-temperature fabrication of amorphous In2O3:Sn films with high electron mobility via nitrogen mediated amorphization, J. Phys. Conf Ser..
6. 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治, 色素増感太陽電池のポリマー対向電極における触媒反応の活性化, 信学技報 (IEICE Technical Report), 334, 27-29, 117, 2017.12.
7. S. Tanami, D. Ichida, S. Hashimoto, H. Seo, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani, Low temperature rapid formation of Au-induced crystalline Ge films using sputtering deposition, Thin Solid Films , 59-64, 641, 2017.11, [URL].
8. S. Toko, K. Keya, Y. Torigoe, T. Kojima, H. Seo, N. Itagaki, K. Koga, M. Shiratani , Hysteresis in volume fraction of clusters incorporated into a-Si:H films deposited by SiH4 plasma chemical vapor deposition, Surf. Coat. Technol., Part B, 388-394, 326, 2017.10, [URL].
9. H. Seo, C. V.V.M. Gopi, H.-J. Kim, N. Itagaki, K. Koga, M. Shiratani, Performance enhancement of quantum dot-sensitized solar cells based on polymer nano-composite catalyst, Electrochimica Acta, 337-342, 249, 2017.09, [URL].
10. K. Koga, H. Seo, A. Tanaka, N. Itagaki, M. Shiratani, Synthesis of Nanoparticles using Low Temperature Plasmas and Its Application to Solar Cells and Tracers in Living Body , ECS Transactions, 3, 17-24, 77, 2017.05, [URL].
11. 古閑一憲, 徐鉉雄, 板垣奈穂, 白谷正治, 低温プラズマによるナノ粒子の合成と太陽電池への応用, 信学技報 (IEICE Technical Report), 8, 5-8, 117, 2017.04.
12. K. Matsushima, T. Ide, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Densities and surface reaction probabilities of oxygen and nitrogen atoms during sputter deposition of ZnInON on ZnO, IEEE Trans. Plasma Science, 2, 323-327, 45, 2017.01, [URL].
13. K. Iwasaki, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki , Effects of sputtering gas pressure dependence of surface morphology of ZnO films fabricated via nitrogen mediated crystallization, MRS Advances, 5, 265-270, 2, 2016.12, [URL].
14. K. Matsushima, K. Iwasaki, N. Miyahara, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Blue Photoluminescence of (ZnO)0.92(InN)0.08, MRS Advances, 5, 277-282, 2, 2016.12, [URL].
15. M. Shiratani, M. Soejima, H. Seo, N. Itagaki, K. Koga , Fluctuation of Position and Energy of a Fine Particle in Plasma Nanofabrication, Materials Science Forum, 1772-1777 , 879, 2016.11, [URL].
16. S. Toko, Y. Kanemitsu, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Optical Bandgap Energy of Si Nanoparticle Composite Films Deposited by a Multi-Hollow Discharge Plasma Chemical Vapor Deposition Method, J. Nanosci. Nanotechnol., 10, 10753-10757, 16, 2016.10, [URL].
17. H. Seo, M. K. Son, S. Hashimoto, T. Takasaki, N. Itagaki, K. Koga, M. Shiratani, Surface Modification of Polymer Counter Electrode for Low Cost Dye-sensitized Solar Cells, Electrochimica Acta, 880-887, 210, 2016.08, [URL].
18. H. Seo, S. H. Nam, N. Itagaki, K. Koga, M. Shiratani, and J.-H. Boo, Effect of Sulfur Doped TiO2 on Photovoltaic Properties of Dye-Sensitized Solar Cells, Electron. Mater. Lett., 4, 530-536, 12, 2016.07, [URL].
19. K. Keya, T. Kojima, Y. Torigoe, S. Toko, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Correlation between SiH2/SiH and light-induced degradation of p–i–n hydrogenated amorphous silicon solar cells, Jpn. J. Appl. Phys. , 7S2, 07LE03, 55, 2016.07, [URL].
20. T. Onozato, T. Katase, A. Yamamoto, S. Katayama, K. Matsushima, N. Itagaki, H. Yoshida, H. Ohta, Optoelectronic properties of valence-statecontrolled amorphous niobium oxide, J. Phys.: Condens. Matter, 255001, 28, 2016.05, [URL].
21. H. Seo, D. Ichida, S. Hashimoto, N. Itagaki, K. Koga, M. Shiratani, S. H. Nam and J. H. Boo , Improvement of Charge Transportation in Si Quantum Dot-Sensitized Solar Cells Using Vanadium Doped TiO2, J. Nanosci. Nanotechnol., 5, 4875-4879, 16, 2016.05, [URL].
22. H. Seo, G. Uchida, N. Itagaki, K. Koga, and M. Shiratani , Quantum Characterization of Si Nano-Particles Fabricated by Multi-Hollow Discharge Plasma Chemical Vapor Deposition, Sci. Adv. Mater., 3, 636-639, 8, 2016.03, [URL].
23. H. Seo, M.-K. Son, N. Itagaki, K. Koga, M. Shiratani, Polymer Counter Electrode of Poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) Containing TiO2 Nano-particles for Dye-sensitized Solar Cells, Journal of Power Sources, 25-30, 307, 2016.03, [URL].
24. K. Matsushima, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Room Temperature Fabrication of (ZnO)x(InN)1-x films with Step-Terrace Structure by RF Magnetron Sputtering, MRS Advances, 2, 115-119, 1, 2016.01, [URL].
25. 白谷正治, 古閑一憲, 立石瑞樹, 片山龍, 山下大輔, 鎌滝晋礼, 徐鉉雄, 板垣奈穂, 芦川直子, 時谷政行, 増崎貴, 西村清彦, 相良明男, LHD実験グループ, 水素プラズマとカーボン壁の相互作用で発生したダストに対するダスト除去フィルタのダスト除去性能評価, 九州大学超顕微解析研究センター報告, 116-117, 39, 2015.12.
26. K. Koga, T. Sarinont, T. Amano, H. Seo, N. Itagaki, N. Hayashi, M. Shiratani, Simple method of improving harvest by nonthermal air plasma irradiation of seeds of Arabidopsis thaliana (L.), Appl. Phys. Express, 016201, 9, 2015.12, [URL].
27. S. Toko, Y. Torigoe, K. Keya, H. Seo, N. Itagaki, K. Koga, and M. Shiratani, Effects of Gas Flow Rate on Deposition Rate and Amount of Si Clusters Incorporated into a-Si:H Films, Jpn. J. Appl. Phys. , 1S, 01AA19, 55, 2015.12, [URL].
28. X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori, Effects of deposition rate and ion bombardment on properties of a-C:H films deposited by H-assisted plasma CVD method, Jpn. J. Appl. Phys. , 1S, 01AA11, 55, 2015.11, [URL].
29. H. Seo, S. Hashimoto, D. Ichida, N. Itagaki, K. Koga and M. Shiratani , Structural alternation of tandem dye-sensitized solar cells based on mesh-type of counter electrode, Electrochimica Acta, 206-210, 179, 2015.10, [URL].
30. M. Soejima, T. Ito, D. Yamashita, N. Itagaki, H. Seo, K. Koga, M. Shiratani, Attraction during binary collision of fine particles in Ar plasma, Proc. 68th GEC/9th ICRP/33rd SPP, 9, GT1.18, 60, 2015.10, [URL].
31. T. Ito, M. Soejima, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani, T. Kobayashi, S. Inagaki, Cross correlation analysis of plasma perturbation in amplitude modulated reactive dusty plasmas, Proc. 68th GEC/9th ICRP/33rd SPP, 9, GT1.49, 60, 2015.10, [URL].
32. X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori, Raman Spectroscopy of a-C:H Films Deposited Using Ar + H2+ C7H8 Plasma CVD, Proc. 68th GEC/9th ICRP/33rd SPP, 9, GT1.145, 60, 2015.10, [URL].
33. S. Tanami, D. Ichida, D. Hashimoto, G. Uchida, H. Seo, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Substrate temperature dependence of Au-induced crystalline Ge film formation using sputtering deposition, Proc. 68th GEC/9th ICRP/33rd SPP, 9, GT1.149, 60, 2015.10, [URL].
34. T. Takasaki, T. Ide, K. Matsushima, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M, Shiratani, N. Itagaki, Measurements of nitrogen atom density in N2/Ar sputtering plasma for fabrication of high-mobility amorphous In2O3:Sn films, Proc. 68th GEC/9th ICRP/33rd SPP, 9, GT1.150, 60, 2015.10, [URL].
35. S. Toko, Y. Torigoe, K. Keya, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Cluster Incorporation into A-Si:H Films Deposited Using H 2 +SiH 4 Discharge Plasmas, Proc. 68th GEC/9th ICRP/33rd SPP, 9, GT1.152, 60, 2015.10, [URL].
36. K. Matsushima, T. Ide, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M, Shiratani, N. Itagaki, Measurements of absolute densities of nitrogen and oxygen atoms in sputtering plasma for fabrication of ZnInON films, Proc. 68th GEC/9th ICRP/33rd SPP, 9, GT1.154, 60, 2015.10, [URL].
37. T. Ide, K. Matsushima, T. Takasaki, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M, Shiratani, N. Itagaki, Measurement of absolute density of N atom in sputtering plasma for epitaxial growth ZnO films via nitrogen mediated crystallization, Proc. 68th GEC/9th ICRP/33rd SPP, 9, GT1.155, 60, 2015.10, [URL].
38. R. Katayama, K. Koga, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, M. Tokitani, S. Masuzaki, K. Nishimura, A. Sagara, LHD Experimental Group, Deposition rate and etching rate due to neutral radicals and dust particles measured using QCMs together with a dust eliminating filter, Proc. 68th GEC/9th ICRP/33rd SPP, 9, LW1.101, 60, 2015.10, [URL].
39. D. Yamashita, M. Soejima, T. Ito, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Laser trapped single fine particle as a probe of plasma parameters, Proc. 68th GEC/9th ICRP/33rd SPP, 9, LW1.104, 60, 2015.10, [URL].
40. Y. Torigoe, K. Keya, S. Toko, H. Seo, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani, Effects of electrode structure on characteristics of multi-hollow discharges, Proc. 68th GEC/9th ICRP/33rd SPP, 9, LW1.129, 60, 2015.10, [URL].
41. K. Keya, Y. Torigoe, S. Toko, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Raman spectroscopy of PIN hydrogenated amorphous silicon solar cells, Proc. 68th GEC/9th ICRP/33rd SPP, 9, LW1.132, 60, 2015.10, [URL].
42. S. Hashimoto, S. Tanami, H. Seo, G. Uchida, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Effects of N2 dilution on fabrication of Ge nanoparticles by rf sputtering, Proc. 68th GEC/9th ICRP/33rd SPP, 9, LW1.133, 60, 2015.10, [URL].
43. T. Sarinont, T. Amano, K. Koga, S. Kitazaki, N. Hayashi, M. Shiratani, Effects of Ambient Humidity on Plant Growth Enhancement by Atmospheric Air Plasma Irradiation to Plant Seeds, Proc. 68th GEC/9th ICRP/33rd SPP, 9, LW1.136, 60, 2015.10, [URL].
44. K. Koga, T. Sarinont, T. Amano, H. Seo, N. Itagaki, Y. Nakatsu, A. Tanaka, M. Shiratani, Simple Evaluation Method of Atmospheric Plasma Irradiation Dose using pH of Water, Proc. 68th GEC/9th ICRP/33rd SPP, 9, LW1.143, 60, 2015.10, [URL].
45. T. Amano, K. Koga, T. Sarinont, H. Seo, N. Itagaki, M. Shiratani, S. Kitazaki, M. Hirata, Y. Nakatsu, A. Tanaka, Synthesis of indium-containing nanoparticles using plasmas in water to study their effects on living body, Proc. 68th GEC/9th ICRP/33rd SPP, 9, LW1.158, 60, 2015.10, [URL].
46. M. Tateishi, K. Koga, R. Katayama, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, and the LHD Experiment Group, Real-time mass measurement of dust particles deposited on vessel wall in a divertor simulator using quartz crystal microbalances, J. Nucl. Mater. , 865–868, 463, 2015.08, [URL].
47. S. Toko, Y. Torigoe, W. Chen, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Effects of cluster incorporation into hydrogenated amorphous silicon films in initial discharge phase on film stability, Thin Solid Films, 126-131, 587, 2015.07, [URL].
48. X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori, Effects of discharge voltage on the characteristics of a-C:H films prepared by H-assisted Plasma CVD method, Trans. Mater. Res. Soc. Jpn., 2, 123-128, 40, 2015.07, [URL].
49. K. Matsushima, R. Shimizu, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Fabrication of ZnInON/ZnO multi-quantum well solar cells, Thin Solid Films, 106-111, 587, 2015.07, [URL].
50. K. Matsushima, R. Shimizu, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Fabrication of p-i-n solar cells utilizing ZnInON by RF magnetron sputtering, Mat. Res. Soc. Symp. Proc., aa09-10, 1741, 2015.03, [URL].
51. N. Itagaki, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani, ZnO-based semiconductors with tunable band gap for solar sell applications, Proc. SPIE photonics west 2015, 93640P, 9364, 2015.03, [URL].
52. T. Ide, K. Matsushima, R. Shimizu, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Effects of morphology of buffer layers on ZnO/sapphire heteroepitaxial growth by RF magnetron sputtering, Mat. Res. Soc. Symp. Proc., aa09-12, 1741, 2015.02, [URL].
53. H. Seo, D. Ichida, S. Hashimoto, G. Uchida, N. Itagaki, K. Koga, and M. Shiratani, Photovoltaic application of Si nanoparticles fabricated by multihollow plasma discharge CVD: Dye and Si co-sensitized solar cells, Jpn. J. Appl. Phys. , 1S, 01AD02, 54, 2015.01, [URL].
54. N. Itagaki, K. Matsushima, D. Yamashia, H. Seo, K. Koga, M. Shiratani, Synthesis and characterization of ZnInON semiconductor: a ZnO-based compound with tunable band gap, Mater. Res. Express, 3, 036405, 1, 2014.09, [URL].
55. I. Suhariadi, M. Shiratani, N. Itagaki, Growth mechanism of ZnO deposited by nitrogen mediated crystallization, Mater. Res. Express, 3, 036403, 1, 2014.09, [URL].
56. H. Seo, D. Ichida, S. Hashimoto, G. Uchida, N. Itagaki, K. Koga, and M. Shiratani, Performance enhancement of dye and Si quantum dot hybrid nanostructured solar cell with TiO2 barrier, Trans. Mater. Res. Soc. Jpn., 3, 321-324, 39, 2014.09, [URL].
57. N. Itagaki, K. Kuwahara, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani, Off-axis sputter deposition of ZnO films on c-sapphire substrates by utilizing nitrogen-mediated crystallization method, Opt. Engineering, 8, 087109, 53, 2014.08, [URL].
58. M. Shiratani, K. Kamataki, G. Uchida, K. Koga, H. Seo, N. Itagaki, T. Ishihara, SiC Nanoparticle Composite Anode for Li-Ion Batteries, Mat. Res. Soc. Symp. Proc., n08-58, 1678, 2014.07, [URL].
59. J. W. Allen, M. S. Allen, D. C. Look, B. R. Wenner, N. Itagaki, K. Matsushima, I. Surhariadi, Infrared Plasmonics via ZnO, J. Nano Res., 109, 8, 2014.06, [URL].
60. D. Ichida, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga and M. Shiratani, Deposition of crystalline Ge nanoparticle films by high-pressure RF magnetron sputtering method, J. Phys. : Conf. Series (SPSM26), 1, 012002, 518, 2014.06, [URL].
61. Y. Hashimoto, S. Toko, D. Yamashita, H. Seo, K. Kamataki, N. Itagaki, K. Koga and M. Shiratani, Effects of filter gap of cluster-eliminating filter on cluster eliminating efficiency, J. Phys. : Conf. Series (SPSM26), 1, 012007, 518, 2014.06, [URL].
62. S. Toko, Y. Hashimoto, Y. Kanemitu, Y. Torigoe, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga and M. Shiratani, Contribution of ionic precursors to deposition rate of a-Si:H films fabricated by plasma CVD, J. Phys. : Conf. Series (SPSM26), 1, 012008, 518, 2014.06, [URL].
63. M. Tateishi, K. Koga, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura and A. Sagara, the LHD Experimental Group, Contribution of H2 plasma etching to radial profile of amount of dust particles in a divertor simulator, J. Phys. : Conf. Series (SPSM26), 1, 012009, 518, 2014.06, [URL].
64. X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine and M. Hori, Emission spectroscopy of Ar + H-2+ C7H8 plasmas: C7H8 flow rate dependence and pressure dependence , J. Phys. : Conf. Series (SPSM26), 1, 012010, 518, 2014.06, [URL].
65. T. Ito, K. Koga, D. Yamashita, K. Kamataki, N. Itagaki, G. Uchida and M. Shiratani, Plasma etching of single fine particle trapped in Ar plasma by optical tweezers, J. Phys. : Conf. Series (SPSM26), 1, 012014, 518, 2014.06, [URL].
66. M. Shiratani, G. Uchida, H. Seo, D. Ichida, K. Koga, N. Itagaki, and K. Kamataki, Nanostructure Control of Si and Ge Quantum Dots Based Solar Cells Using Plasma Processes, Materials Science Forum, 2022-2027, 783-786, 2014.05, [URL].
67. H. Seo, D. Ichida, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Performance dependence of Si quantum dot-sensitized solar cells on counter electrode, Jpn. J. Appl. Phys. , 5S1, 05FZ01, 53, 2014.05, [URL].
68. H. Seo, M. Son, S. Park, M. Jeong, H. Kim, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Electrochemical impedance analysis on the additional layers for the enhancement on the performance of dye-sensitized solar cell, Thin Solid Films, 122-126, 554, 2014.03, [URL].
69. N. Itagaki, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani, Off-axis sputter deposition of ZnO films on c-sapphire substrates with buffer layers prepared via nitrogen-mediated crystallization, Proc. SPIE photonics west 2014, 89871A, 8987, 2014.03, [URL].
70. G. Uchida, Y. Kanemitsu, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Combinatorial Plasma CVD of Si Nanoparticle Composite Films for Band Gap Control, Jpn. Phys. Soc. Conf. Proc (APPC12), 015080, 1, 2014.03, [URL].
71. M. Shiratani, Y. Morita, K. Kamataki, H. Seo, G. Uchida, N. Itagaki, K. Koga, Correlation between nanoparticle growth and plasma parameters in low pressure reactive VHF discharge plasmas, Jpn. Phys. Soc. Conf. Proc (APPC12), 015083, 1, 2014.03, [URL].
72. G. Uchida, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Effects of H2 Gas Addition on Structure of Ge Nanoparticle Films Deposited by High-pressure RF Magnetron Sputtering Method, Jpn. Phys. Soc. Conf. Proc (APPC12), 015082, 1, 2014.03, [URL].
73. M. Tateishi, K. Koga, D. Yamashita, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, and the LHD Experimental Group, Spatial Profile of Flux of Dust Particles Generated due to Interaction between Hydrogen Plasmas and Graphite Target, Jpn. Phys. Soc. Conf. Proc (APPC12), 015020, 1, 2014.03, [URL].
74. S. Toko, Y. Kim, Y. Hashimoto, Y. Kanemitu, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, and M. Shiratani, Effects of Grid DC Bias on Incorporation of Si Clusters into Amorphous Silicon Thin Films in Multi-Hollow Discharge Plasma CVD, Jpn. Phys. Soc. Conf. Proc (APPC12), 015069, 1, 2014.03, [URL].
75. X. Dong, R. Torigoe, K. Koga, G. Uchida, M. Shiratani, N. Itagaki, Y. Setsuhara, K. Takenaka, M. Sekine, .M. Hori, Deposition of Carbon Films on PMMA Using H-assisted Plasma CVD, Jpn. Phys. Soc. Conf. Proc (APPC12), 015072, 1, 2014.03, [URL].
76. I. Suhariadi, K. Oshikawa, D. Yamashita, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, and N. Itagaki, Study on the Crystal Growth Mechanism of ZnO Films Fabricated Via Nitrogen Mediated Crystallization, Jpn. Phys. Soc. Conf. Proc (APPC12), 015064, 1, 2014.03, [URL].
77. H. Seo, D. Ichida, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Analysis on the photovoltaic property of Si quantum dot-sensitized solar cells, Int. J. Precision Eng. Manuf., 2, 339-343, 15, 2014.02, [URL].
78. Y. Kanemitsu, G. Uchida, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Combinatorial evaluation of optical properties of crystalline Si nanoparticle embedded Si films deposited by a multi-hollow discharge plasma CVD method, Proc. 8th Int. Conf. Reactive Plasmas, 6P-AM-S08-P35, 2014.02.
79. S. Hashimoto, D. Ichida, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Deposition of Crystalline Ge Nanoparticle Films Varying H2 Dilution Ratio Using High Pressure rf Magnetron Sputtering, Proc. 8th Int. Conf. Reactive Plasmas, 6P-AM-S08-P32, 2014.02.
80. Y. Torigoe, Y. Hashimoto, S. Toko, Y. Kim, D. Yamashita, H. Seo, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani, Effects of amplitude modulation on deposition of hydrogenated amorphous silicon films using multi-Hollow discharge plasma CVD method, Proc. 8th Int. Conf. Reactive Plasmas, 6P-AM-S08-P36, 2014.02.
81. D. Ichida, S. Hashimoto, G. Uchida, H. Seo, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Fabrication of size-controlled Ge nanoparticle films varying gas flow rate using high pressure rf magnetron sputtering method, Proc. 8th Int. Conf. Reactive Plasmas, 6P-AM-S08-P33, 2014.02.
82. Y. Hashimoto, S. Toko, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Substrate temperature dependence of hydrogen content of a-Si:H film deposited with a cluster-eliminating filter, Proc. 8th Int. Conf. Reactive Plasmas, 6P-AM-S08-P37, 2014.02.
83. Y. Morita, T. Ito, S. Iwashita, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Analysis of fluctuation of Ar metastable density and nanoparticle amount in capacitively coupled discharges with amplitude modulation, Proc. 8th Int. Conf. Reactive Plasmas, 5P-AM-S02-P10, 2014.02.
84. K. Matsushima, R. Shimizu, T. Ide, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki, Fabrication of In-rich ZnInON filmswith narrow band gap by RF magnetron sputtering, Proc. 8th Int. Conf. Reactive Plasmas, 5P-PM-S08-P02, 2014.02.
85. S. Toko, Y. Hashimoto, Y. Kanemitu, Y. Torigoe, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Fine response of deposition rate of Si films deposited by multi-hollow discharge plasma CVD with amplitude modulation, Proc. 8th Int. Conf. Reactive Plasmas, 5P-AM-S05-P17, 2014.02.
86. K. Oshikawa, I. Suhariadi, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, N. Itagaki, Magnetron sputtering of low-resistive In2O3:Sn films with buffer layers fabricated via nitrogen mediated crystallization, Proc. 8th Int. Conf. Reactive Plasmas, 5P-PM-S08-P07, 2014.02.
87. T. Ito, Y. Morita, S. Iwashita, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Nanoparticle amount in reactive plasmas with amplitude modulation detected by twodimensional laser light scattering method, Proc. 8th Int. Conf. Reactive Plasmas, 5P-AM-SPD-P01, 2014.02.
88. X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, K. Takenaka, Y. Setsuhara, M. Sekine, M. Hori, Pressure dependence of carbon film deposition using H-assisted plasma CVD, Proc. 8th Int. Conf. Reactive Plasmas, 5P-PM-S08-P14, 2014.02.
89. D. Yamashita, K. Koga, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani, Raman spectroscopy of a fine particle optically trapped in plasma, Proc. 8th Int. Conf. Reactive Plasmas, 5P-AM-S05-P23, 2014.02.
90. M. Tateishi, K. Koga, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, the LHD Experimental Group, Spatial profile of flux of dust particles in hydrogen helicon plasmas, Proc. 8th Int. Conf. Reactive Plasmas, 5P-AM-S05-P21, 2014.02.
91. R. Shimizu, K. Matsushima, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Sputtering fabrication of a novel widegap semiconductor ZnGaON for optoelectronic devices with wide bandgap for optical device, Proc. 8th Int. Conf. Reactive Plasmas, 5P-PM-S08-P03, 2014.02.
92. I. Suhariadi, K. Oshikawa, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Study on nitrogen desorption behavior of sputtered ZnO for transparent conducting oxide, Proc. 8th Int. Conf. Reactive Plasmas, 5P-PM-S08-P05, 2014.02.
93. A. Tanaka, M. Hirata, K. Koga, N. Itagaki, M. Shiratani, N. Hayashi, G. Uchida, Subacute toxicity of gallium arsenide, indium arsenide and arsenic trioxide following intermittent intrantracheal instillations to the lung of rats, Proc. 8th Int. Conf. Reactive Plasmas, 5P-AM-S2-P35, 2014.02.
94. M. Shiratani, K. Koga, K. Kamataki, S. Iwashita, Y. Morita, H. Seo, N. Itagaki, G. Uchida, A model for correlation between plasma fluctuation and fluctuation of nanoparticle growth in reactive plasmas, Proc. 8th Int. Conf. Reactive Plasmas, 4B-PM-O1, 2014.02.
95. T. Ide, K. Matsushima, R. Shimizu, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Epitaxial growth of ZnO films on sapphire substrates by magnetron sputtering: Effects of buffer layers prepared via nitrogen mediated crystallization, Proc. 8th Int. Conf. Reactive Plasmas, 4P-PM-S08-P10, 2014.02.
96. G. Uchida, K. Kamataki, D. Ichida, Y. Morita, H. Seo, N. Itagaki, K. Koga, T. Ishihara, M. Shiratani, Fabrication of SiC nanoparticles as high capacity electrodes for Li-ion batteries, Proc. 8th Int. Conf. Reactive Plasmas, 4C-PM-O1, 2014.02.
97. H. Seo, D. Ichida, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Quantum characterization and photovoltaic application of Si nano-particles fabricated by multi-hollow plasma discharge chemical vapor deposition, Proc. 8th Int. Conf. Reactive Plasmas, 4P-PM-S11-P36, 2014.02.
98. K. Koga, Y. Morita, K. Kamataki, D. Yamashita, N. Itagaki, G. Uchida, M. Shiratani, Coupling between radicals and nanoparticles in initial growth phase in reactive plasmas with amplitude modulation (Invited), Proc. 8th Int. Conf. Reactive Plasmas, 3B-WS-14, 2014.02.
99. T. Nakanishi, K. Oshikawa, I. Suhariadi, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Sputter Deposition of Ga-doped Zinc Oxide (GZO) Films with Buffer Layers Fabricated via Nitrogen Mediated Crystallization, Proc. 8th Int. Conf. Reactive Plasmas, 5P-AM-S05-P19, 2014.02.
100. M. Shiratani, K. Koga, K. Kamataki, S. Iwashita, G. Uchida, H. Seo, and N. Itagaki, Theory for correlation between plasma fluctuation and fluctuation of nanoparticle growth in reactive plasmas, Jpn. J. Appl. Phys. , 1, 010201, 53, 2014.01, [URL].
101. G. Uchida, Y. Wang, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Characteristics of Crystalline Silicon/Si Quantum Dot/Poly(3,4-ethylenedioxythiophene) Hybrid Solar Cells, Jpn. J. Appl. Phys. , 11NA05, 52, 2013.11, [URL].
102. Y. Kim, K. Hatozaki, Y. Hashimoto, G. Uchida, K. Kamataki, N. Itagaki, H. Seo, K. Koga, and M. Shiratani, Correlation between Volume Fraction of Silicon Clusters in Amorphous Silicon Films and Optical Emission Properties of Si and SiH, Jpn. J. Appl. Phys. , 11NA07, 52, 2013.11, [URL].
103. K. Koga, M. Tateishi, K. Nishiyama, G. Uchida, K. Kamataki, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, Akiko Sagara, the LHD Experimental Group, Flux Control of Carbon Nanoparticles Generated due to Interactions between Hydrogen Plasmas and Graphite Using DC-Biased Substrates, Jpn. J. Appl. Phys. , 11NA08, 52, 2013.11, [URL].
104. H. Seo, Y. Wang, D. Ichida, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, S. Nam, J. Boo, Improvement on the Electron Transfer of Dye-Sensitized Solar Cell Using Vanadium Doped TiO2, Jpn. J. Appl. Phys., 11NM02, 52, 2013.11, [URL].
105. K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki, Epitaxial Growth of ZnInON Films with Tunable Band Gap from 1.7 eV to 3.3 eV on ZnO Templates, Jpn. J. Appl. Phys., 11NM06, 52, 2013.11, [URL].
106. H. Seo, Y. Wang, M. Sato, G. Uchida, K. Koga, N. Itagaki, K. Kamataki, M. Shiratani, The improvement on the performance of quantum dot-sensitized solar cells with functionalized Si, Thin Solid Films, 284-288, 546, 2013.11, [URL].
107. I. Suhariadi, K. Oshikawa, K. Kuwahara, K. Matsushima, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, N. Itagaki, Effects of Nitrogen on Crystal Growth of Sputter-Deposited ZnO Films for Transparent Conducting Oxide, Jpn. J. Appl. Phys. , 11NB03, 52, 2013.11, [URL].
108. H. Seo, M. Son, H. Kim, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Study on the Fabrication of Paint-Type Si Quantum Dot-Sensitized Solar Cells, Jpn. J. Appl. Phys., 10MB07(5pages) , 57, 2013.10, [URL].
109. G. Uchida, M. Sato, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Characteristics of photocurrent generation in the near-ultraviolet region in Si quantum-dot sensitized solar cells, Thin Solid Films, 93-98, 544, 2013.10, [URL].
110. 白谷正治, 古閑一憲, 内田儀一郎, Hyunwoong Seo, 板垣奈穂, 岩下伸也, ナノ材料のプラズマプロセシングの研究の現状と将来 , 表面科学, 10, 520, 34, 2013.10, [URL].
111. Y. Kim, T. Matsunaga, K. Nakahara, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Effects of nanoparticle incorporation on properties of microcrystalline films deposited using multi-hollow discharge plasma CVD, Surf. Coat. Technol., 1, S550–S553, 228, 2013.08, [URL].
112. K. Nishiyama, Y. Morita, G. Uchida, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, K. Koga, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, the LHD Experimental Group, S. Bornholdt, and H. Kersten, Discharge power dependence of carbon dust flux in a divertor simulator, J. Nucl. Mater. , S788–S791, 438, 2013.07, [URL].
113. K. Koga, K. Nishiyama, Y. Morita, G. Uchida, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, and the LHD Experimental Group, Effects of DC Substrate Bias Voltage on Dust Flux in the Large Helical Device, J. Nucl. Mater. , S727–S730, 438, 2013.07, [URL].
114. Y. Morita, S. Iwashita, D. Yamashita, G. Uchida, K. Kamataki, H. Seo, N. Itagaki, K. Koga, and M. Shiratani, Observation of nanoparticle growth process using a high speed camera, ISPC 21 Proceedings, 2013.07, [URL].
115. H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Growth control of ZnO nano-rod with various seeds and photovoltaic application, J. Phys. : Conference Series (11th APCPST), 1, 012029, 441, 2013.06, [URL].
116. H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Analysis on the effect of polysulfide electrolyte composition for higher performance of Si quantum dot-sensitized solar cells, Electrochimica Acta, 1, 43-47, 95, 2013.04, [URL].
117. S. Bornholdt, N. Itagaki, K. Kuwahara, H. Wulff, M. Shiratani and H. Kersten, Characterization of the energy flux toward the substrate during magnetron sputter deposition of ZnO thin films , Plasma Sources Sci. Technol., 2, 025019, 22 , 2013.04, [URL].
118. D. C. Look, K. D. Leedy, A. Kiefer, B. Claflin, N. Itagaki, K. Matsushima, I. Surhariadi, Model for Thickness dependence of mobility and concentration in highly conductive ZnO, Opt. Engineering, 3, 033801, 52, 2013.03, [URL].
119. N. Itagaki, K. Oshikawa, K. Matsushima, I. Suhariadi, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, Crystallinity control of sputtered ZnO films by utilizing buffer layers fabricated via nitrogen mediated crystallization: Effects of nitrogen flow rate, Proc. 13th International Conference on Plasma Surface Engineering, 26, 84-87, 2, 2013.03, [URL].
120. K. Koga, T. Urakawa, G. Uchida, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, Control of Deposition Profile and Properties of Plasma CVD Carbon Films, Proc. 13th International Conference on Plasma Surface Engineering, 26, 136-139, 2, 2013.03, [URL].
121. M. Shiratani, G. Uchida, K. Kamataki, H. Seo, N. Itagaki, K. Koga, Control of nanoparticle formation in reactive plasmas and its application to fabrication of green energy devices, Proc. 13th International Conference on Plasma Surface Engineering, 26, 100-103, 2, 2013.03, [URL].
122. H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, The reduction of charge recombination and performance enhancement by the surface modification of Si quantum dot-sensitized solar cell, Electrochimica Acta, 1, 213-217, 87, 2013.01, [URL].
123. S. Iwashita, K. Nishiyama, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Dust particle formation due to interaction between graphite and helicon deuterium plasmas, Fusion Engineering and Design, 1, 28-32, 88, 2013.01, [URL].
124. H. Seo, Y. Wang, M. Sato, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Improvement of Si Adhesion and Reduction of Electron Recombination for Si Quantum Dot-Sensitized Solar Cells, Jpn. J. Appl. Phys. , 1, 01AD05(5pages), 52, 2013.01, [URL].
125. Y. Kim, K. Hatozaki, Y. Hashimoto, G. Uchida, K. Kamataki, N. Itagaki, H. Seo, K. Koga, M. Shiratani, High Amount Cluster Incorporation in Initial Si Film Deposition by SiH4 Plasma Chemical Vapor Deposition, Jpn. J. Appl. Phys. , 1, 01AD01(4pages), 52, 2013.01, [URL].
126. I. Suhariadi, K. Matsushima, K. Kuwahara, K. Oshikawa, D. Yamashita, H. Seo, G. Uchida, K. Kamtaki, K. Koga, M. Shiratani, S. Bornholdt, H. Kersten, Harm Wulff, N. Itagaki, Effects of Hydrogen Dilution on ZnO Thin Films Fabricated via Nitrogen Mediated Crystallization, Jpn. J. Appl. Phys. , 1, 01AC08(5pages), 52, 2013.01, [URL].
127. Y. Kim, T. Matsunaga, K. Nakahara ,G. Uchida, K. Kamataki , N. Itagaki, H. Seo, K. Koga, M. Shiratani , Effects of crystalline nanoparticle incorporation on growth, structure, and properties of microcrystalline silicon films deposited by plasma CVD , Thin Solid Films, 29-33, 523, 2012.11, [URL].
128. K. Kamataki, K. Koga, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani, Control of radial density profile of nano-particle produced in reactive plasma by amplitude modulation of rf discharge voltage, Thin Solid Films, 76-79, 523, 2012.11, [URL].
129. N. Itagaki, K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, Sputter deposition of Epitaxial Zinc-Indium Oxynitride Films for Excitonic Transistors (Invited), Proc. International Symposium on Dry Process, 97-98, 34, 2012.11.
130. I. Suhariadi, N. Itagaki, K. Kuwahara, K. Oshikawa, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, K. Nakahara, M. Shiratani, ZnO:Al Thin Films with Buffer Layers Fabricated via Nitrogen Mediated Crystallization: Effects of N2/Ar Gas Flow Rate Ratio, Trans. Mater. Res. Soc. Jpn., 2, 165-168, 37, 2012.06, [URL].
131. K. Kuwahara, N. Itagaki, K. Nakahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani, High quality epitaxial ZnO films grown on solid-phase crystallized buffer layers, Thin Solid Films, 14, 4674-4677, 520, 2012.05, [URL].
132. K. Kamataki, Y. Morita, M. Shiratani, K. Koga, G. Uchida, N. Itagaki , In situ analysis of size dispersion of nano-particles in reactive plasma using two dimentional laser light scattering method, Journal of Instrumentation, 4, C04017, 7, 2012.04, [URL].
133. M. Shiratani, K. Hatozaki, Y. Hashimoto, Y. Kim, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, Characteristics of stable a-Si:H Schottoky cells fabricated by suppressing cluster deposition, Mat. Res. Soc. Symp. Proc., 377-382, 1426, 2012.04, [URL].
134. Y. Kim, K. Hatozaki, Y. Hashimoto, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, In-situ Measurements of Cluster Volume Fraction in Silicon Thin Films Using Quartz Crystal Microbalances, Mat. Res. Soc. Symp. Proc., 307-311, 1426, 2012.04, [URL].
135. H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, The Optical Analysis and Application of Size-controllable Si Quantum Dots Fabricated by Multi-hollow Discharge Plasma Chemical Vapor Deposition, Mat. Res. Soc. Symp. Proc., 313-318, 1426, 2012.04, [URL].
136. K. Koga, K. Nakahara, Y. Kim, T. Matsunaga, D.Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, and M. Shiratani, Deposition of cluster-free B-doped a-Si:H films using SiH4+B10H14 multi-hollow discharge plasma CVD, Jpn. J. Appl. Phys. , 1, 01AD03(4pages), 51, 2012.01, [URL].
137. G. Uchida, K. Yamamoto, M. Sato, Y. Kawashima, K. Nakahara, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Effect of nitridation of Si nano-particles on the performance of quantum-dot sensitized solar cells, Jpn. J. Appl. Phys. , 1, 01AD01(5pages), 51, 2012.01, [URL].
138. K. Koga, T. Matsunaga, Y. Kim, K. Nakahara, D. Yamashita, H. Matsuzaki, K. Kamataki, G. Uchida, N. Itagaki, and M. Shiratani, Combinatorial Deposition of Microcrystalline Silicon Films Using Multihollow Discharge Plasma Chemical Vapor Deposition, Jpn. J. Appl. Phys. , 1, 01AD02(4pages), 51, 2012.01, [URL].
139. N. Itagaki, K. Kuwahara, K. Matsushima, K. Oshikawa , Novel fabrication method for ZnO films via nitrogen-mediated crystallization (Invited), Proc. of SPIE photonics west 2012, 826306, 8263, 2012.01, [URL].
140. N. Itagaki, K. Kuwahara, K. Nakahara, D. Yamashita, K. Kamataki, H. Seo, G. Uchida, K. Koga, M. Shiratani, Low resistive ZnO:Al films with ZnO buffer layers fabricated by Ar/N2 magnetron sputtering, Proc. Plasma Conf. 2011, 24G16, 2011.11.
141. N. Itagaki, K. Kuwahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani, Zinc oxide-based transparent conducting films with buffer layers fabricated via nitrogen-mediated crystallization, Proc. PVSEC-21, 4D-2P-10, 2011.11.
142. Y. Wang, M. Sato, T. Matsunaga, N. Itagaki, H. Seo, G. Uchida, K. Koga, M. Shiratani, Properties and performance of si quantum dot-sensitized solar cells with low temperature titania paste, Proc. PVSEC-21, 3D-5P-09, 2011.11.
143. Y. Wang, M. Sato, H. Seo, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Performance enhancement of Si quantum dot-sensitized solar cells by surface modification using ZnO barrier layer, Proc. Intern. Symp. on Dry Process, 133-134, 33, 2011.11, [URL].
144. K. Koga, T. Urakawa, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori, Self-organized carbon Mk formation on the top surface of fine trenches using a low temperature plasma anisotropic CVD for depositing fine organic structure, Proc. Plasma Conf. 2011, 23G03, 2011.11.
145. Y. Wang, M. Sato, H. Seo, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Effects of electrolyte on performance of quantum dot-sensitized solar cells using Si nanoparticles synthesized by multi-hollow discharge plasma CVD, Proc. Plasma Conf. 2011, 23P013-O, 2011.11.
146. M. Shiratani, Y. Kim, T. Matsunaga, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, Effects of nanoparticle incorporation on Si thin films deposited by plasma CVD, Proc. Plasma Conf. 2011, 24G06, 2011.11.
147. K. Nakahara, K. Hatozaki, Y. Hashimoto, T. Matsunaga, M. Sato, D. Yamashita, H. Matsuzaki, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Deposition of cluster-free a-Si:H films using cluster eliminating filter, Proc. Plasma Conf. 2011, 24P010-O, 2011.11.
148. Y. Kim, T. Matsunaga, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Radical Flux Evaluation to Microcrystalline Silicon Films Deposited by Multi-Hollow Discharge Plasma CVD, Proc. Plasma Conf. 2011, 24P011-O, 2011.11.
149. K. Nishiyama, Y. Morita, D. Yamashita, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, the LHD Experimental Group, S. Bornholdt, H. Kersten, Collection of carbon dust particles formed due to plasma-wall interactions between high density H2 plasma and carbon wall onto substrates by applying local DC bias voltage, Proc. Plasma Conf. 2011, 24P094-O, 2011.11.
150. K. Kamataki, K. Koga, G. Uchida, H. Seo, N. Itagaki, M. Shiratani, Study of interaction between plasma fluctuation and nucleation of nanoparticle in plasma CVD, Proc. Plasma Conf. 2011, 24P014-O, 2011.11.
151. T. Matsunaga, Y. Kim, K. Koga, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani, Influence of nano-particles on multi-hollow discharge plasma for microcrystalline silicon thin films deposition, Proc. Plasma Conf. 2011, 24P015-O, 2011.11.
152. K. Hatozaki, K. Nakahara, T. Matsunaga, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani, Deposition of highly stable cluster-free a-Si:H films using fast gas flow multi-hollow discharge plasma CVD method, Proc. Plasma Conf. 2011, 24P016-O, 2011.11.
153. K. Kuwahara, N. Itagaki, K. Nakahara, D. Yamashita, Seo H., G. Uchida, K. Kamataki, K. Koga, M. Shiratani, Effects of N2 gas addition to sputtering plasma on properties of epitaxial ZnO films, Proc. Plasma Conf. 2011, 24P008-O, 2011.11.
154. Y. Kim, T. Matsunaga, D. Yamashita, K. Kamataki, N. Itagaki, G. Uchida, K. Koga, M. Shiratani, Combinatorial study on effects of substatrate temperature of silicon film deposition using multi-hollow discharge plasma cvd, Proc. PVSEC-21, 3D-2P-09, 2011.11.
155. K. Nakahara, K. Hatozaki, M. Sato, T. Matsunaga, D. Yamashita, H. Matsuzaki, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Defect density of cluster-free a-si:h films deposited by multi-hollow discharge plasma CVD, Proc. PVSEC-21, 3D-2P-20, 2011.11.
156. K. Kuwahara, N. Itagaki, K. Nakahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani, Zno films with buffer layers crystallized via nitrogen mediation: Effects of deposition temperature of buffer layers, Proc. PVSEC-21, 4D-2P-11, 2011.11.
157. T. Matsunaga, Y. Kim, K. Koga, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani, Effects of nano-particles on (220) crystal orientation of microcrystallite silicon thin films, Proc. PVSEC-21, 4D-2P-16, 2011.11.
158. K. Kamataki, H. Miyata, K. Koga, G. Uchida, N. Itagaki, M. Shiratani, Impacts of Amplitude Modulation of RF Discharge Voltage on the Growth of Nanoparticles in Reactive Plasma, Appl. Phys. Express, 10, 105001(3pages), 4, 2011.10, [URL].
159. K. Koga, K. Nakahara, Y. Kim, Y. Kawashima, T. Matsunaga, M. Sato, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, and M. Shiratani, Deposition of cluster-free P-doped a-Si:H films using SiH4+PH3 multi-hollow discharge plasma CVD method, Physica Status Solidi (c), 10, 3013-3016, 8, 2011.10, [URL].
160. G. Uchida, K. Yamamoto, Y. Kawashima, M. Sato, K. Nakahara, K. Kamataki, N. Itagaki, K. Koga, M. Kondo, M. Shiratani, Surface nitridation of silicon nano-particles using double multi-hollow discharge plasma CVD, Physica Status Solidi (c), 10, 3017-3020, 8, 2011.10, [URL].
161. G. Uchida, Y. Kawashima, K. Yamamoto, M. Sato, K. Nakahara, T. Matsunaga, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Kondo, M. Shiratani, Hybrid sensitized solar cells using Si nanoparticles and ruthenium dye, Physica Status Solidi (c), 10, 3021-3024, 8, 2011.10, [URL].
162. K. Kamataki, H. Miyata, K. Koga, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani, Impacts of Plasma Fluctuations on Growth of Nano-Particles in Reactive Plasma , Proc. of International Conference on Phenomena in Ionized Gases(ICPIG) 2011 Conference, D13-318, 2011.09.
163. K. Koga, Y. Kawashima, T. Matsunaga, M. Sato, K. Nakahara, W. M. Nakamura, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani, Comparison between silicon thin films with and without incorporating crystalline silicon nanoparticles into the film, Thin Solid Films, 20, 6896-6898, 519, 2011.08, [URL].
164. Y. Kim, T. Matsunaga, Y. Kawashima, D. Yamashita, K. Kamataki, N. Itagaki, G. Uchida, K. Koga, M. Shiratani, Combinatorial study of substrate temperature dependence on properties of silicon films deposited using multihollow discharge plasma CVD, Proc. of The 20th International Symposium on Plasma Chemistry (ISPC20), POL08, 2011.07.
165. M. Shiratani, K. Koga, S. Iwashita, G. Uchida, N. Itagaki, K. Kamataki, Nano-factories in plasma: present status and outlook, J. Phys. D: Appl. Phys., 17, 174038, 44, 2011.05, [URL].
166. N. Itagaki, K. Kuwahara, K. Nakahara, Novel Fabrication Method for Transparent Conducting Oxide Films Utilizing Solid-Phase Crystallized Seed Layers, Proc. Int. Conf. Advances in Condensed and Nano Materials 2011, 23-26 , 1393, 2011.02, [URL].
167. K. Koga, G. Uchida, K. Yamamoto, Y. Kawashima, M. Sato, K. Kamataki, N. Itagaki, M. Shiratani, Generation and Surface Modification of Si nano-particles using SiH4/H2 and N2 multi-hollow discharges and their application to the third generation photovoltaics, International Conference on Advances in Condensed and Nano Materials (ICACNM), 27-30, 1393, 2011.02, [URL].
168. N. Itagaki, K. Kuwahara, K. Nakahara, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, Highly Conducting and Very Thin ZnO:Al Films with ZnO Buffer Layer Fabricated by Solid Phase Crystallization from Amorphous Phase, Appl. Phys. Express, 1, 011101-011101-3 , 4, 2011.01, [URL].
169. N. Itagaki, K. Kuwahara, Novel fabrication method of ZnO films utilizing solid-phase crystallized seed layers, Mat. Res. Soc. Symp. Proc., 15-20 , mrsf10-1315-mm02-09 (6 pages) -10.1557/opl.2011.709 , 1315, 2011.01, [URL].
170. N. Itagaki, Novel fabrication method for oxide semiconductors
via atomic-additive mediated crystallization
, Proc. IEEE TENCON 2010, 998-1001, 2010.11, [URL].
171. M. Shiratani, K. Koga, G. Uchida, N. Itagaki, K. Kamataki, Fluctuation Control for Plasma Nanotechnologies, Proc. IEEE TENCON 2010, XII-XVI , 2010.11, [URL], プラズマナノテクノロジーで最重要課題となっている揺らぎの制御に関する現状と将来を展望した論文。.
172. K. Kamataki, H. Miyata, K. Koga, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani, Effects of Amplitude Modulation of rf Discharge Voltage on Growth of Nano-Particles in Reactive Plasma, Proc. IEEE TENCON 2010, 1943-1947, 2010.11, [URL].
173. G. Uchida, S. Nunomutra, H. Miyata, S. Iwashita, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Effects of Ar addition on breakdown voltage in a Si(CH3)2(OCH3)2 RF discharge, Proc. IEEE TENCON 2010, 2199-2201, 2010.11, [URL].
174. K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, K. Yamamoto, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Cluster-Free B-Doped a-Si:H Films Deposited Using SiH4 + B10H14 Multi-Hollow Discharges, Proc. IEEE TENCON 2010, 2216-2218, 2010.11, [URL].
175. T. Matsunaga, Y. Kawashima, K. Koga, K. Nakahara, W. M. Nakamura, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani, Deposition profiles of microcrystalline silicon films using multi-hollow discharge plasma CVD, Proc. IEEE TENCON 2010, 2219-2212, 2010.11, [URL].
176. H. Miyata, K. Nishiyama, S. Iwashita, H. Matsuzaki, D. Yamashita, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Substrate Temperature Dependence of Sticking Probability of SiOx-CH3 Nano-Particles, Proc. of International Symposium on Dry Process, 43-44, P1-A17, 2010.11.
177. G. Uchida, M. Sato, Y. Kawashima, K. Yamamoto, K. Nakahara, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, M. Kondo, Optical and Electrical Properties of Particle Composite Thin Films deposited in SiH4/H2 and N2 Multi-Hollow Discharges , Proc. of MNC2010, 12D-11-66 , 2010.11.
178. K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, K. Yamamoto, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Deposition rate enhancement of cluster-free P-doped a-Si:H films using multi-hollow discharge plasma CVD method, Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma, 7, CTP.00087, 55, 2010.10.
179. T. Matsunaga, Y. Kawashima, K. Koga, W. M. Nakamura, K. Nakahara, H. Matsuzaki, D. Yamashita, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani, Combinatorial deposition of microcrystalline Si films using multi-hollow discharge plasma CVD, Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma, 7, CTP.00089, 55, 2010.10.
180. G. Uchida, M. Sato, Y. Kawashima, K. Nakahara, K. Yamamoto, T. Matsunaga, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Generation of nitridated silicon particles and their thin film deposition using double multi-hollow discharges, Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma, 7, CTP.00093, 55, 2010.10.
181. H. Miyata, K. Nishiyama, S. Iwashita, H. Matsuzaki, D. Yamashita, G. Uchida, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, LHD experimental group , Carbon dust particles generated due to H2 plasma-carbon wall interaction, Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma, 7, CTP.00114, 55, 2010.10.
182. Y. Kawashima, K. Yamamoto, M. Sato, K. Nakahara, T. Matsunaga, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, M. Kondo, Si quantum dot-sensitized solar cells using Si nanoparticles produced by plasma CVD, Proc. 35th IEEE Photovoltaic Specialists Conf., 3347-3351, 2010.07, [URL].
183. K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, K. Yamamoto, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Deposition of cluster-free P-doped a-Si:H films using a multi-hollow discharge plasma CVD method, Proc. 35th IEEE Photovoltaic Specialists Conf., 3722-3755, 2010.07, [URL].
184. H. Kumomi, S. Yaginuma, H. Omura, A.Goyal, A. Sato, M. Watanabe, M. Shimada, N. Kaji, K. Takahashi, M. Ofuji, T. Watanabe, N. Itagaki, H. Shimizu, K. Abe, Y. Tateishi, H. Yabuta, T. Iwasaki, R. Hayashi, T. Aiba, M. Sano, Materials, Devices, and Circuits of Transparent Amorphous-Oxide Semiconductor, J. Display Technol., 12, 531-540, 5, 2009.12, [URL].
185. A. Goyal, T. Iwasaki, N. Itagaki, T. Den, and H. Kumomi, Favorable Elements for an Indium-based Amorphous-oxide TFT Channel: Study of In-X-O (X=B, Mg, Al, Si, Ti, Zn, Ga, Ge, Mo, Sn) Systems, Mat. Res. Soc. Symp. Proc, 1109-B04-0, 1109, 2009.05.
186. N. Itagaki, T. Iwasaki, H. Kumomi, T. Den, K. Nomura, T. Kamiya, and H. Hosono, Zn-In-O based thin-film transistors: Compositional dependence, Phys. Stat. Sol. (a), 8, 1915–1919, 205, 2008.08, [URL].
187. T. Iwasaki, N. Itagaki, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono,, Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system, Appl. Phys. Lett., 24, 242114, 90, 2007.06, [URL].
188. C. Niikura, N. Itagaki, Matsuda, Guiding Principles for Obtaining High-Quality Microcrystalline Silicon Growth Rates Using SiH4/H2 Glow-Discharge Plasma, Jpn. J. Appl. Phys., 3052-3058, 46, 2007.05, [URL].
189. C. Niikura, N. Itagaki, and Matsuda, High rate growth of high-quality microcrystalline silicon films from plasma by interconnected multi-hollow cathode, Surf. Coat. Technol., 9-11, 5463-5467, 201, 2007.02, [URL].
190. C. Niikura, N. Itagaki, and A. Matsuda, Guiding Principles for Preparing High Quality Microcrystalline Silicon at High Growth Rates, Trans. Mater. Res. Soc. Jpn., 2, 503-506, 31, 2006.06.
191. T. Iwasaki, N. Itagaki, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, Combinatorial study on In-Ga-Zn-O semiconductor films as active-channel layers for thin-film transistor, Mat. Res. Soc. Symp. Proc., 80-85, 928, 2006.06, [URL].
192. N. Itagaki, K. Sasaki, Y. Kawai, Electron temperature measurement in SiH4/H2 ECR plasma produced by 915 MHz microwaves, Thin Solid Films, 479-484, 506-507, 2006.05, [URL].
193. D. Ha Thang, K. Sasaki, H. Muta, N. Itagaki, and Y. Kawai, Characteristics of the plasma parameters in the fabrication of microcrystalline silicon thin films using 915 MHz ECR plasma, Thin Solid Films, 485-488, 506-507, 2006.05, [URL].
194. Y. Kawai, N. Itagaki, M. Koga, and H. Muta, Production of low electron temperature ECR plasma, Surf. Coat. Technol., 1-3, 11-16, 193, 2005.04, [URL].
195. N. Itagaki, C. Niikura, A. Matsuda and M. Kondo, Production of high density VHF plasma using a cathode with interconnected multi holes, Proc. Plasma Sci. Symp. 2005 and the 22th Symp. on plasma processing, 163-164, 2005.01.
196. H. Muta, D. Ha Thang, N. Itagaki, and Y. Kawai, Investigation of the Plasma Parameters in 915 MHz ECR Plasma with SiH4/H2 Mixtures, Proc. Plasma Sci. Symp. 2005 and the 22th Symp. on plasma processing, 521-522, 2005.01.
197. N. Itagaki, K. Muta, N. Ishii and Y. Kawai, Control of the electron temperature by varying the resonance zone width in ECR plasma, Thin Solid Films, 1, 59-63, 457, 2004.06, [URL].
198. C. Niikura, N. Itagaki, M. Kondo, Y. Kawai, and Matsuda, High-rate growth of microcrystalline silicon films using a high-density SiH4/H2 glow-discharge plasma, Thin Solid Films, 1, 84-89, 457, 2004.06, [URL].
199. H. Muta, N. Itagaki, M. Koga, and Y. Kawai, Generation of a low-electron-temperature ECR plasma using mirror magnetic field, Surf. Coat. Technol., 152-156, 174-175, 2003.09, [URL].
200. N. Itagaki, S. Iwata, K. Muta, A. Yonesu, S. Kawakami, N. Ishii and Y. Kawai, Electron-temperature dependence of nitrogen dissociation in 915 MHz ECR plasma, Thin Solid Films, 1-2, 259-263, 435, 2003.07, [URL].
201. N. Itagaki, K. Muta, N. Ishii and Y. Kawai, Relationship between the electron temperature and the power absorption profile in ECR plasma, Proc. 16th Intern. Symp. on Plasma Chemistry, Po5.18, 2003.06.
202. N. Itagaki, S. Kawakami, N. Ishii and Y. Kawai , Electron-temperature control in 915 MHz electron cyclotron resonance plasma, J. Vac. Sci. Technol., A, 6, 1969-1973, 20, 2002.11, [URL].
203. N. Itagaki, S. Kawakami, N. Ishii and Y. Kawai, Production of low-electron-temperature electron cyclotron resonance plasma with large area using 915MHz microwave, Vacuum, 3-4, 323-328, 66, 2002.08, [URL].
204. H. Muta, N. Itagaki, and Y. Kawai, Numerical investigation of the production mechanism of a low-temperature electron cyclotron resonance plasma, Vacuum, 3-4, 209-214, 66, 2002.08, [URL].
205. H. Muta, M. Koga, N. Itagaki, and Y. Kawai, Numerical investigation of a low-electron-temperature ECR plasma in Ar/N2 mixtures, Surf. Coat. Technol., 1-3, 157-161, 171, 2002.07, [URL].
206. N. Itagaki, S. Iwata, K. Muta, A. Yonesu, S. Kawakami, N. Ishii and Y. Kawai, Behavior of the molecular dissociation in 915 MHz ECR nitrogen plasma, Proc. 5th Intern. Conf. Reactive Plasmas, 319-320, 1, 2002.07.
207. N. Itagaki, Y. Ueda, N. Ishii and Y. Kawai , Production of low electron temperature ECR plasma for thin film deposition, Surf. Coat. Technol., 546-550, 142-144, 2001.07, [URL].
208. N. Itagaki, S. Kawakami, N. Ishii and Y. Kawai, Production of low electron temperature ECR plasma for plasma application, Proc. XXV Intern. Conf. Phenomena in Ionized Gases, 137-138, 2001.07.
209. N. Itagaki, Y. Ueda, N. Ishii and Y. Kawai, Production of low electron temperature ECR plasma for plasma processing, Thin Solid Films, 1-2, 202-207, 390, 2001.06, [URL].
210. N. Itagaki, T. Yoshizawa, Y. Ueda and Y. Kawai, Investigation of ECR plasma uniformity from the point of view of production & confinement, Thin Solid Films, 2, 152-159, 386, 2001.05, [URL].
211. N. Itagaki, Y. Ueda, N. Ishii and Y. Kawai, Production of low-electron-temperature electron cyclotron resonance plasma using nitrogen gas in the mirror magnetic field, Jpn. J. Appl. Phys., 4A, 2489-2494, 40, 2001.04, [URL].
212. N. Itagaki, Y. Ueda, N. Ishii and Y. Kawai , Effect of magnetic-mirror confinement on electron temperature control in ECR plasma, J. Plasma Fusion Res., 305-308, 4, 2001.02, [URL].
213. N. Itagaki, S. Kawakami, N. Ishii and Y. Kawai, Production of low-electron-temperature ECR plasma using 915 MHz microwave, Proc. Plasma Sci. Symp. 2001 and the 18th Symp. on plasma processing, 111-112, 2001.01.
214. N. Itagaki, A. Fukuda, T. Yoshizawa, M. Shindo, Y. Ueda and Y. Kawai, Plasma parameter measurements and deposition of a-Si:H thin films in pulsed ECR plasma, Surf. Coat. Technol., 1-3, 54-57, 131, 2000.09, [URL].
主要総説, 論評, 解説, 書評, 報告書等
1. 板垣 奈穂, 古閑 一憲, 白谷 正治, スパッタリング成膜法による高品質酸化亜鉛薄膜の形成, 応用物理, 2014.05, [URL], スパッタリング法を用いた酸化亜鉛(ZnO)薄膜の結晶成長において,初期核形成を制御する新しい方法「不純物添加結晶化(Impurity Mediated Crystallization: IMC)法」を開発した.本手法により,高格子不整合基板上への原子レベルで平坦なZnO単結晶膜の作製や,ガラス基板上への極薄低抵抗ZnO導電膜の形成が可能となった.本稿では,IMC法について紹介するとともに,これら成果の概要を述べる..
主要学会発表等
1. Naho Itagki, Soichiro Muraoka, Daisuke Yamashita, Kunihiro Kamataki, Kazunori Koga, and, Effects of Nitrogen Impurity on ZnO Crystal Growth on Si Substrates, 2018 International Conference on Solid State Devices and Materials, 2018.09.
2. Naho Itagki and Masaharu Shiratani, Inverse Stranski-Krastanov Growth of Single Crystalline Films: A New Mode of Heteroepitaxy for Large Lattice Mismatched System, International Conference on PROCESSING & MANUFACTURING OF ADVANCED MATERIALS, 2018.07.
3. Naho Itagki, Nanoka Miyahara, Daisuke Yamashita, Kunihiro Kamataki, Kazunori Koga, and, Sputter epitaxy of high quality (ZnO)x(InN)1-x: a new semiconducting material, 2nd Asia-Pacific Conference on Plasma Physics, 2018.11.
4. Kunihiro Kamataki, Ren Zhou, Hiroshi Ohtomo, Daisuke Yamashita, Naho Itagaki, Kazunori Koga and Masaharu Shiratani, Impact of Amplitude Modulation of RF Discharge Voltage on
the Spatial Profile of Nanoparticle Characteristics in Reactive Plasma, 2nd Asia-Pacific Conference on Plasma Physics, 2018.11.
5. 板垣奈穂, 岩崎和也, 古閑一憲, 白谷正治, 格子整合条件を超えて原子平坦表面を実現する新規スパッタエピタキシー技術の開発~ZnO on sapphireを例に~(招待講演), 第65回応用物理学会春季学術講演会, 2018.03.
6. N. Itagaki, Excitonic devices for on-chip optical interconnects, Joint workshop btw SKKU and Kyushu University Emerging materials and devices, 2018.01.
7. N. Itagaki, H. Wang, D. Yamashita, H. Seo, K. Koga, M. Shiratani, Fabrication of High-Mobility Nanocrystal-Free a-In2O3:Sn Films by Magnetron Sputtering with Impurity-Mediated Amorphization Method, 27th annual meeting of MRS-J, 2017.12.
8. 板垣奈穂, 逆SKモードを利用した超高品質スパッタエピタキシー(招待講演), Plasma Conference 2017, 2017.11.
9. 板垣奈穂, 山下大輔, 徐鉉雄, 古閑一憲, 白谷正治, 不純物添加スパッタリング法による高移動度・ナノ結晶フリー a-In2O3:Sn薄膜の作製, 第78回応用物理学会秋季学術講演会, 2017.09.
10. N. Itagaki, T. Takasaki, H. Wang, D. Yamashita, H. Seo, K. Koga, M. Shiratani , Fabrication of High-Mobility Amorphous In2O3:Sn Films by RF Magnetron Sputtering with Impurity-Mediated Amorphization Method (Keynote), International Union of Materials Research Societies - The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017), 2017.08.
11. N. Itagaki, K. Iwasaki, D. Yamashita, H. Seo, K. Koga, M. Shiratani, Inverse Stranski-Krastanov Growth of Single Crystalline ZnO-Based Semiconductors on Lattice Mismatched Substrates (Invited), International Union of Materials Research Societies - The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017), 2017.08.
12. N. Itagaki, K. Iwasaki, D. Yamashita, H. Seo, K. Koga, M. Shiratani, Inverse Stranski-Krastanov Growth of Pit-Free Single Crystalline ZnO Films on Lattice Mismatched Substrates, 29th International Conference on Defects in Semiconductors (ICDS2017), 2017.08.
13. 板垣 奈穂, 不純物添加スパッタリングによる高移動度アモルファスITOの作製(招待講演), プラズマ材料科学第 153委員会 第130回研究会 プラズマを用いた新奇プロセス・新規材料創製, 2017.04.
14. 板垣奈穂, スパッタエピタキシー法を用いた高品質単結晶薄膜の形成(招待講演), プラズマ核融合学会第29回専門講習会「スパッタ技術の現状と展望」, 2017.01.
15. N. Itagaki, K. Matsushima, D. Ymashita, H. Seo, K. Koga, M. Shiratani, Sputtering growth of (ZnO)x(InN)1-x semiconductor: a ZnO-based compound with bandgap tunability over the entire visible spectrum (Invited), 26th annual meeting of MRS-J, 2016.12.
16. 板垣奈穂, 松島宏一, 山下大輔, 徐鉉雄, 古閑一憲, 白谷 正治, バンドギャップチューニング可能なZnO系新半導体材料の開発(プラズマエレクトロニクス賞受賞記念講演), 第77回応用物理学会秋季学術講演会, 2016.09.
17. N. Itagaki and M. Shiratani, Plasma surface interactions of single crystal ZnO during sputtering in Ar+O2+N2, Workshop on Plasma surface interaction for technological applications, 2016.07.
18. N. Itagaki, Inverse SK mode of epitaxial film growth and its application to solar cells (Invited), The 3rd Korea-Japan Joint Symposium on Advanced Solar Cells, 2016.02.
19. 板垣奈穂, 可視領域でバンドギャップチューニング可能な新材料ZIONの開発(招待講演), 固体化学の新しい指針を探る研究会第78回定例研究会, 2015.10.
20. N. Itagaki, Single Crystal Growth On Large Lattice-Mismatched Substrates By Using Buffer Layers With Fine Grains (Invited), The 10th Asian-European International Conference on Plasma Surface Engineering (AEPSE2015), 2015.09.
21. N. Itagaki, T. Ide, K. Matsushima, T. Takasaki, D. Yamashita, H. Seo, K. Koga, Masaharu Shiratani, Sputtering growth of single-crystalline ZnO films on c-sapphire substrates by using impurity-mediated crystallization method: Effects of surface morphology of buffer layers, 2015 E-MRS Spring Meeting and Exhibit, 2015.05.
22. N. Itagaki, T. Takasaki, T. Nakanishi, D. Yamashita, H. Seo, K. Koga, M. Shiratani, High-mobility amorphous In2O3:Sn films prepared by sputter deposition with nitrogen-mediated amorphization method, 7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterial/8th International Conference on Plasma Nanotechnology and Science (ISPlasma2015/IC-PLANTS2015), 2015.03.
23. 板垣奈穂, 松島宏一, 井手智章, 山下大輔, 徐鉉雄, 古閑一憲, 白谷正治, 可視領域でバンドギャップチューニング可能なZnO系新材料の開発(招待講演), 第62回応用物理学会春季学術講演会, 2015.03.
24. N. Itagaki, ZnO-based semiconductors with tunable band gap for 3rd generation solar sells (Invited), International Society for Optics and Photonics, Photonics West 2015, 2015.02.
25. 板垣奈穂, 不純物添加結晶化法による高品質ZnO薄膜の形成(招待講演), 学振166委員会 第66回研究会 , 2015.01.
26. Naho Itagaki, ZnO-based semiconductors with tunable band gap for solar cell application (Invited), 2015 Japan-Korea Joint Symposium on Advanced Solar Cells, 2015.01.
27. N. Itagaki, Sputtering Growth of ZnO-based semiconductors with Band Gap Tunability over the Entire Visible Spectrum (Invited), Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2014), 2014.12.
28. N. Itagaki, K. Matsushima, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, Sputtering Growth of Pseudobinary ZnO-InN Alloys with Tunable Band Gap for Application in Multi-Quantum Well Solar Cells, 2014 MRS Fall Meeting, 2014.12.
29. N. Itagaki, K. Matsushima, T. Ide, D. Yamashita, H. Seo, K. Koga, and M. Shiratani, Synthesize of ZnO-based Semiconductor with Tunable Band Gap and Its Application in Multi-Quantum-Well Solar Cells, 6th World Conferenceon Photovoltaic Energy Conversion, 2014.11.
30. 板垣奈穂, 古閑一憲, 白谷正治, スパッタリング成膜法による高品質酸化亜鉛薄膜の形成, 第30回 九州・山口プラズマ研究会, 2014.11.
31. 板垣奈穂, 中西貴彦, スハリアディ イピン, 山下大輔, ソウ ヒョンウォン, 古閑一憲, 白谷正治, 非平衡極限-窒素添加法による高移動度・非晶質In2O3:Sn膜の作製-, Plasma Conference 2014, 2014.11.
32. N. Itagaki, Sputteing Growth of High-Quality ZnO-based Semiconductors for Optoelectronic Applications (Invited), American Vacuum Society 61st International Symposium and Exhibition (AVS), 2014.11.
33. 板垣奈穂, 超高効率太陽電池への挑戦 ~量子効果を利用した新型太陽電池の実現に向けて~(招待講演), 第25回精密加工プロセス研究会講演会, 2014.10.
34. 板垣奈穂, 井出智章, 松島宏一, 山下大輔, 徐鉉雄, 古閑一憲, 白谷正治, c面サファイア基板上への単結晶ZnO膜の形成 : 格子不整合系ヘテロエピタキシーにおける成長初期過程の表面形態の影響, 第75回応用物理学会秋季学術講演会, 2014.09.
35. N. Itagaki, Fabrication of Pseudo-binary ZnO-InN Alloys with Tunable Bandgap by Low-Temperature Magnetron Sputtering (Invited), 15th IUMRS-International Conference in Asia, 2014.08.
36. N. Itagaki, I. Suhariadi, D. Yamashita, H. Seo, K. Koga, M. Shiratani, Crystal Growth Control of Sputter-Deposited ZnO Films by Nitrogen-Mediated Crystallization Method , 15th IUMRS-International Conference in Asia, 2014.08.
37. N. Itagaki, K. Matsushima, R. Shimizu, and T. Ide, Sputter-Deposition of Pseudobinary ZnO-InN Alloys with Tunable Bandgap for Photovoltaic Application (Invited), International Conference on Microelectronics and Plasma Technology 2014 (ICMAP2014), 2014.07.
38. 板垣奈穂, Novel oxynitride semiconductors for photovoltaic applications (太陽電池のための新規酸窒化物材料の探索), 36th Seminar of Photovoltaic Power Generation Project (第36回平成26年度太陽光発電プロジェクト講演会 ), 2014.05.
39. N. Itagaki, Sputtering growth of ZnO-based semiconductors using ZnON buffer layers for optoelectronic applications (Invited), The International Symposium on Plasma-Nano Materials and Processes, 2014.04.
40. 板垣奈穂, 不純物添加結晶化法を用いた高品質ZnO薄膜のスパッタリング成膜」 -格子不整合基板上への単結晶膜の作製から極薄透明導電膜の作製まで- (招待講演), スパッタリングおよびプラズマプロセス技術部会(SP部会) 第137回定例研究会 , 2014.03.
41. N. Itagaki, K. Matsushima, I. Suhariadi, D. Yamashita, H. Seo, G. Uchida, K. Koga, M. Shiratani, Sputtering growth of single-crystalline ZnO-based semiconductors on lattice mismatched substrates (Invited), International Society for Optics and Photonics, Photonics West 2014, 2014.02.
42. 板垣奈穂, 新規酸窒化物半導体を用いたピエゾ電界誘起量子井戸型太陽電池の創製, 第2回「太陽光と光電変換機能」領域公開シンポジウム, 2013.12.
43. 板垣奈穂, ZnInON系太陽電池材料の探索 (招待講演), 第5回薄膜太陽電池セミナー, 2013.11.
44. 板垣奈穂, 不純物添加結晶化法による酸化亜鉛の高品質成長と新規2次元材料への展開, 第29回九州山口プラズマ研究会, 2013.11.
45. N. Itagaki, K. Oshikawa, I. Suhariadi, K. Matsushima, D. Yamashita, H. Seo, G. Uchida, K. Koga, M. Shiratani, Crystallinity Control of Sputtered ZnO:Al Transparent Conducting Films by Utilizing Buffer Layers Fabricated via Nitrogen Mediated Crystallization, Solid State Devices and Materials 2013 (SSDM), 2013.09.
46. N. Itagaki, K. Matsushima, D. Yamashita, H. Seo, K. Kamataki, G.Uchida, K. Koga, M. Shiratani, Synthesis and Characterization of Oxynitride Semiconductor ZnInON with Tunable Bandgap, The 26th Symposium on Plasma Science for Materials (SPSM-26), 2013.09.
47. N. Itagaki, K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, Band-Gap Engineering of ZnO Based Semiconductors Deposited by Sputtering, 2013 JSAP-MRS Joint Symposia, 2013.09.
48. N. Itagaki, Novel Approach to Sputtering Growth of Single Crystalline Oxide Semiconductors for Optoelectronic Applications (Invited), The 9th Asian-European International Conference on Plasma Surface Engineering (AEPSE2013), 2013.08.
49. 板垣奈穂, グリーン時代を切り拓く革新的エレクトロニクス材料の創製~極低消費電力トランジスタおよび次世代型太陽電池の実現に向けて~, 2013年度先端サマーセミナー(第5回研究活動交流会), 2013.08.
50. N. Itagaki, Novel Application of Ar/N2 Discharges to Sputtering Growth of High Quality Oxide Semiconductors (Invited), The XXXI edition of the International Conference on Phenomena in Ionized Gases (ICPIG), 2013.07.
51. N. Itagaki, K. Kuwahara, I. Suhariadi, K. Oshikawa, K. Matsushima, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, and M. Shiratani, Sputter Deposition of Single Crystal ZnO Films on 18% Lattice mismatched c-Al2O3 Substrates via Nitrogen Mediated Crystallization, International Symposium on Sputtering and Plasma Processes (ISSP2013), 2013.07.
52. N. Itagaki, K. Kuwahara, K. Matsushima, K. Oshikawa, and I. Suarihadi, Sputter Deposition of Semiconductor-Grade ZnO Based Materials on Lattice Mismatched Substrates (Invited), The Collaborative Conference on Materials Research 2013, 2013.06.
53. 板垣奈穂, 松島宏一, 桑原和成, 山下大輔, 徐鉉雄, 鎌滝晋礼, 内田儀一郎, 古閑一憲, 白谷正治, 高効率太陽電池の実現に向けた新規酸窒化物半導体ZnInONのバンドギャップエンジニアリング, 第10回 「次世代の太陽光発電システム」シンポジウム, 2013.05.
54. 板垣奈穂, 桑原和成, 山下大輔, 徐鉉雄, 鎌滝晋礼, 内田儀一郎, 古閑一憲, 白谷正治, スパッタ法によるC面サファイア基板上への原子平坦ZnO薄膜の作製, 2013年第60回応用物理学会春季学術講演会, 2013.03.
55. N. Itagaki, K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, Sputter deposition of zinc-indium oxynitride semiconductors with narrow bandgap for excitonic transistors, 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013), 2013.02.
56. N. Itagaki, K. Kuwahara, I. Suhariadi, K. Oshikawa, K. Matsushima, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, Sputter deposition of atomically-flat ZnO films on lattice mismatched substrates via nitrogen mediated crystallization (Invited), The 16th International Workshop on Advanced Plasma Processing and Diagnostics, 2013.01.
57. N. Itagaki, K. Kuwahara, K. Matsushima, T. Hirose, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, Epitaxial Growth of ZnO Based Semiconductors via Impurity-Additive Mediated Crysallization, 2012 MRS Fall Meeting, 2012.11.
58. N. Itagaki, K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, Sputter deposition of Epitaxial Zinc-Indium Oxynitride Films for Excitonic Transistors, The 34th International Symposium on Dry Process , 2012.11.
59. N. Itagaki, K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, Zinc-Indium Oxynitride Thin Films for Multiple-Quantum–Well Solar Cells, Asia-Pacific Conference on Plasma Science and Technology (11th APCPST), 2012.10.
60. N. Itagaki, K. Matsushima, K. Kuwahara, D. Yamashita, G. Uchida, K. Kamataki, H. Seo, K. Koga, M. Shiratani, Zinc-Indium Oxynitride Semiconductors for Piezo-Electric-Field Effect MQW Solar Cells, IUMRS‐ICEM 2012 , 2012.09.
61. N. Itagaki, I. Suhariadi, K. Kuwahara, K. Oshikawa, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, Crystallinity control of sputtered ZnO films by utilizing buffer layers fabricated via nitrogen mediated crystallization: Effects of nitrogen flow rate, 13th International Conference on Plasma Surface Engineering (PSE2012), 2012.09.
62. 板垣奈穂、松島宏一、桑原和成、押川晃一郎、I. Suhariadi、山下大輔、徐鉉雄、鎌滝晋礼、内田儀一郎、古閑一憲、白谷正治, 高効率量子井戸型太陽電池のための新規酸窒化物半導体薄膜の作製, 第9回「次世代の太陽光発電システム」シンポジウム, 2012.05.
63. N. Itagaki, Piezo-electric-field effect MQW solar cells based on novel oxynitride semiconductors, 日本化学会第92春季年会(2012), 2012.03.
64. 板垣奈穂, I. Suhariadi, 桑原和成, 山下大輔, 徐鉉雄, 鎌滝晋礼, 内田儀一郎, 古閑一憲, 白谷正治, 窒素添加結晶化バッファー層によるZnO:Al 薄膜の結晶性制御: 窒素供給量の影響, 第59回応用物理学関係連合講演会, 2012.03.
65. N. Itagaki, K. Kuwahara, K. Matsushima, K. Oshikawa , Novel fabrication method for ZnO films via nitrogen-mediated crystallization (Invited), SPIE (International society for optics and photonics) photonics west 2012, 2012.01.
66. N. Itagaki, K. Kuwahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani, Zinc oxide-based transparent conducting films with buffer layers fabricated via nitrogen-mediated crystallization, The 21st International Photovoltaic Science and Engineering Conference (PVSEC-21), 2011.12.
67. 板垣奈穂, 桑原和成, 中原賢太, 山下大輔, 鎌滝晋礼, 徐鉉雄, 内田儀一郎, 古閑一憲, 白谷正治, Ar/N2マグネトロンスパッタによる低抵抗ZnO:Al膜の作製, Plasma Conference 2011 (PLASMA2011) , 2011.11.
68. 板垣奈穂, 桑原和成, 中原賢太, 山下大輔, 鎌滝晋礼, 内田儀一郎, 古閑一憲, 白谷正治, 窒素添加結晶化法による超均一・低抵抗酸化亜鉛薄膜の作製 , 第27回九州・山口プラズマ研究会(兼応用物理学会九州支部シンポジウム「プラズマ計測とその応用 ナノプロセスから環境まで」), 2011.11.
69. N. Itagaki, K. Kuwahara, D. Yamashita, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, Spatial distribution of resistivity of ZnO:Al thin films fabricated on solid-phase crystallized seed layers, European Material Research Society 2011 Fall Meeting (E-MRS), 2011.09.
70. 板垣奈穂, 桑原和成, 山下大輔, 鎌滝晋礼, 内田儀一郎, 古閑一憲, 白谷正治, ZnO:Al薄膜の抵抗率の面内均一性に対する固相結晶化シード層の効果, 第72回応用物理学会学術講演会, 2011.09.
71. N. Itagaki, K. Kuwahara, D. Yamashita, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, Fabrication of high quality ZnO films via nitrogen-mediated crystallization, 第24回プラズマ材料科学シンポジウム (SPSM-24), 2011.07.
72. N. Itagaki, K. Kuwahara, K. Nakahara, D. Yamashita, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, Fabrication of highly conducting ZnO:Al films utilizing solid-phase crystallized seed layer, European Materials Research Society 2011 Spring Meeting , 2011.05.
73. 板垣奈穂, 桑原和成, 中原賢太, 山下大輔, 鎌滝晋礼, 内田儀一郎, 古閑一憲, 白谷正治, 固相結晶化シード層を用いた酸化亜鉛系透明導電膜の作製, 第58回応用物理学関係連合講演会, 2011.03.
74. N. Itagaki, K. Kuwahara, and K. Nakahara, Novel fabrication method for transparent conducting oxide films
utilizing solid-phase crystallized seed layers (Invited), International Conference on Advances in Condensed and Nano Materials-2011(ICACNM-2011), 2011.02.
75. N. Itagaki, K. Kuwahara, Solid phase crystallization of ZnO films via nitrogen-atom mediation, 2010 MRS Fall Meeting, 2010.11.
76. N. Itagaki, Novel fabrication method for oxide semiconductors via atomic-additive mediated crystallization (Invited), International technical conference of IEEE Region 10, 2010.11, 高い電気伝導度と可視光透明性を有する酸化亜鉛(ZnO)はタッチパネルや太陽電池等に欠かせない透明導電膜材料として期待されている。しかし、その性能はレアメタル系材料に比べて低く、本格的な実用化には到っていない。本講演では、申請者が提案する新しい手法により、超低抵抗率を有するレアメタル代替透明導電膜材料を実現したことを報告する。本提案の作製技術は、次の2つの特長を有する。
1. 非晶質ZnON(酸窒化亜鉛)膜をアニールし、ZnOを固相結晶化させることで、結晶核密度の制御されたZnO薄膜を作製する。非晶質相からのZnO固相結晶化に成功した例は本研究が世界で初めてである。
2. 1.で作製した固相結晶化上にZnOを形成することにより、結晶成長初期における核発生が抑制されるため、結晶性に優れたZnO膜を形成することが出来る。これにより従来に比べ抵抗率が一桁低いZnO膜の作製に成功した。
 本研究の成果はZnO透明導電膜実用化のブレークスルーにつながるだけでなく、他の酸化物にも応用可能な、新しい手法として発展すると期待される。.
77. 板垣奈穂, 桑原和成, 鎌滝晋礼, 内田儀一郎, 古閑一憲, 白谷正治, アモルファス相からの固相結晶化による酸化亜鉛薄膜の作製, 第26回九州・山口プラズマ研究会, 2010.11.
78. N. Itagaki, K. Kuwahara, K. Nakahara, D. Yamashita, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, Fabrication of a-ZnON films by Ar/N2 sputtering for solid-phase crystallization of ZnO, 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas (ICRP), 2010.10.
79. 板垣奈穂, 桑原和成, 中原賢太, 山下大輔, 鎌滝晋礼, 内田儀一郎, 古閑一憲, 白谷正治, 窒素原子を介した固相結晶化法による酸化亜鉛薄膜の作製, 第71回応用物理学会学術講演会, 2010.09.
80. 板垣奈穂, 公募で勝つには-私の経験, 第37回西日本放電懇談会, 2010.08.
81. N. Itagaki, Combinatorial sputtering of oxynitride semiconductors (Invited), 2010 International Workshop on Plasma Applications, 2010.06.
82. N. Itagaki, S. Yaginuma, H. Omura, A. Goyal, A. Sato, M. Watanabe, M. Shimada, N. Kaji, K. Takahashi, M. Ofuji, T. Watanabe, H. Shimizu, K. Abe, Y. Tateishi, H. Yabuta, T. Iwasaki, R. Hayashi, T. Aiba, M. Sano and H. Kumomi, Amorphous Oxide Semiconductor Based TFTs: Their Current Situation and Issues (Invited), 第19回日本MRS学術シンポジウム(English Session), 2009.12.
83. 板垣奈穂, Amita Goyal, 岩崎達哉, 田透, 雲見日出也, In-X-O (X=B,Mg,Al,Si,Ti,Ga,Ge,Mo,Sn) をチャネル層に用いたTFTとその特性の元素X依存性, 第69回応用物理学会学術講演会, 2008.09.
84. N. Itagaki, T. Iwasaki, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, Zn-In-O based thin-film transistors: Compositional dependence, European Material Research Society 2007 Spring Meeting, 2007.06.
85. 板垣奈穂, 岩崎達哉, 田透, 雲見日出也, 野村研二, 神谷利夫, 細野秀雄, In-Ga-Zn-O 系薄膜を用いた電界効果トランジスタとその組成依存性, 第53回応用物理学関係連合講演会, 2006.03.
86. 板垣奈穂, 新倉ちさと, 松田彰久, 近藤道雄, マルチホロー型カソードを用いた高密度VHFプラズマの生成と診断, 第65回応用物理学会学術講演会, 2004.09.
87. N. Itagaki, K. Sasaki and Y. Kawai, Electron-Temperature Measurement in SiH4/H2 ECR Plasma Produced by 915MHz Microwaves, 7th Asia Pacific Conf. Plasma Sci. Technol. and 17th Symp. Plasma Sci. Mater., 2004.06.
88. N. Itagaki, K. Muta, N. Ishii and Y. Kawai, Production of Electron-Temperature-Controllable ECR Plasma for Thin Film Deposition, 50th American Vacuum Soc. Int’l Symp., 2003.11.
89. N. Itagaki, K. Muta, Y. Kawai, N. Ishii, Relationship between the plasma parameter and the microwave power absorption in ECR plasma, American Phys. Soc. 45st Annual Meet. Division of Plasma Phys., 2003.11.
90. N. Itagaki, K. Muta, N. Ishii and Y. Kawai, Electron Temperature Control in ECR Plasma by Varying the Resonance Zone Width, Asian European Int’l Conf. Plasma Surface Engineering, 2003.09.
91. N. Itagaki, H. Muta, N. Ishii and Y. Kawai, Control of the electron temperature by varying the resonance zone width in ECR plasma, 16th Symposium on Plasma Science for Materials, 2003.06.
92. N. Itagaki, K. Muta, N. Ishii and Y. Kawai, Relationship between the electron temperature and the power absorption profile in ECR plasma, 16th Int’l. Symp. Plasma Chemistry, 2003.06.
93. 板垣奈穂, 牟田浩司, 河合良信, ECRプラズマにおける共鳴幅変化による電子温度制御, 第 50回応用物理学関係連合講演会, 2003.03.
94. 板垣奈穂, 牟田浩司, 河合良信, 915MHz ECRプラズマにおける電子温度のパワー吸収分布依存性, プラズマ・核融合学会第19回年会, 2002.11.
95. N. Itagaki, S, Iwata, K. Muta, Y. Kawai, A. Yonesu, S. Kawakami, N. Ishii, Behaviour of N2 Dissociation in ECR Plasma, 4th Cross Straits Symp. Mater.,Energy and Environmental Sci., 2002.11.
96. 板垣奈穂, 河合良信, 米須章, 川上聡, 石井信雄, 915MHz ECRプラズマの窒素解離特性, プラズマ科学のフロンティア研究会, 2002.10.
97. N. Itagaki, S. Iwata, K. Muta, A. Yonesu, S. Kawakami, N. Ishii, Y. Kawai, Behavior of the molecular dissociation in 915 MHz ECR nitrogen plasma, 16th European Conf. Atomic & Molecular Phys. Ionized Gases & 5th Int’l Conf. Reactive Plasmas, 2002.07.
98. N. Itagaki, S. Iwata, K. Muta, A. Yonesu, S. Kawakami, N. Ishii, Y. Kawai, Electron-temperature dependence of nitrogen dissociation in 915 MHz ECR plasma, 6th Asian-European International Conference on Plasma Surface Engineering, 2002.07.
99. 板垣奈穂、岩田真治、牟田浩二、米須明、川上聡、石井信雄、河合良信, 915 MHz ECRプラズマにおける窒素解離特性の電子温度依存性, 第49回応用物理学関係連合講演会, 2002.03.
100. 板垣奈穂, 川上聡, 石井信雄, 河合良信, 915MHz ECRプラズマにおける電子温度制御, プラズマ・核融合学会 第18回年会, 2001.11.
101. N. Itagaki, Y. Kawai, S. Kawakami, N. Ishii, Electron-temperature control in 915 MHz electron cyclotron resonance plasma, 48th American Vacuum Soc. Int’l Symp., 2001.10.
102. N. Itagaki, S. Kawakami, N. Ishii, Y. Kawai, Production of low electron temperature ECR plasma for plasma application, Int’l Conf. Phenomena in Ionized Gases, 2001.07.
103. N. Itagaki, S. Kawakami, N. Ishii, Y. Kawai, Production of low-electron temperature ECR plasma with large area using 915 MHz microwave, 6th Int’l Symp. Sputtering and Plasma Processes, 2001.06.
104. 板垣奈穂, 上田洋子, 石井信雄, 河合良信, ECRプラズマの低電子温度化に対する窒素ガス添加効果, 平成12年度応用物理学会九州支部講演会, 2000.12.
105. N. Itagaki, Y. Ueda, N. Ishii and Y. Kawai, Effect of Magnetic-Mirror Confinement on Electron Temperature Control in ECR Plasma, 11th Int. Toki Conf. on Plasma Phys.and Control.Nucl. Fusion, 2000.12.
106. N. Itagaki, Y.Ueda and Y. Kawai, Production of Low Electron Temperature ECR Plasma for Plasma Processing, 5th Asia-Pacific Conference on Plasma Science & Technology and 13th Symposium on Plasma Science for Materials, 2000.09.
107. N. Itagaki, Y. Ueda, N. Ishii and Y. Kawai, Production of low electron temperature ECR plasma for thin film deposition, Int’l Conf. Plasma Surface Engineering, 2000.09.
108. 板垣奈穂, 上田洋子, 河合良信, 石井信雄, 低電子温度ECRプラズマ生成への試み, 第47回応用物理学関係連合講演会, 2000.03.
109. N. Itagaki, A. Fukuda, Y. Ueda, N.Ishii and Y. Kawai, Control of the Electron Temperature in an ECR Plasma for Thin Film Deposition, American Phys. Soc. 41st Annual Meet. Division of Plasma Phys., 1999.11.
110. N. Itagaki, A. Fukuda, T. Yoshizawa, M. Shindo, Y. Ueda and Y. Kawai, Plasma parameter measurements and deposition of a-Si:H thin films in pulsed ECR plasma, Asian European Int’l Conf. Plasma Surface Engineering, 1999.09.
111. N. Itagaki, T. Yoshizawa, Y. Ueda, Y. Kawai, Investigation of ECR plasma uniformity from the point of view of production & confinement, 12th Symposium on Plasma Science for Materials, 1999.06.
特許出願・取得
特許出願件数  14件
特許登録件数  45件
学会活動
所属学会名
Materials Research Society
Europian Materials Research Society
応用物理学会 プラズマエレクトロニクス分科会
応用物理学会 薄膜・表面物理分科会
応用物理学会
学協会役員等への就任
2016.04~2020.06, 日本学術振興会 136委員会, 委員.
2015.04, 応用物理学会 プラズマエレクトロニクス分科会, 幹事.
2015.03~2019.06, 応用物理学会, 代議員.
2013.11~2020.06, 日本学術振興会153委員会, 委員.
2012.05~2020.06, 応用物理学会九州支部, 理事.
学会大会・会議・シンポジウム等における役割
2017.09.11~2018.09.15, The 11th Asian-European International Conference on Plasma, International Program Committee.
2018.09.09~2018.09.13, International Conference on Solid State Devices and Materials (SSDM), Committee member.
2017.07.31~2017.08.04, The 29th International Conference on Defects in Semiconductors, Organizing Committee.
2016.10.27~2016.10.31, 9th International Workshop on Zinc Oxide and Related Materials (IWZnO 2016), Organizing Committee.
2016.09.01~2016.09.03, 第10回プラズマエレクトロニクスインキュベーションホール, 企画担当幹事.
2015.09.26~2015.09.27, 平成27年度(第68回)電気 ・情報関係学会九州支部連合大会 , 座長(Chairmanship).
2015.09.20~2015.09.24, 10th Asian-European International Conference on Plasma Surface Engineering (AEPSE2015), International Program Committee.
2015.09.01~2016.09.03, 第10回プラズマエレクトロニクスインキュベーションホール, 企画担当幹事.
2015.03.28~2015.03.31, International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials, Program Committee.
2015.03.27~2015.03.31, International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials, Sympojium Chair.
2015.01.09~2015.01.10, 2015 Japan-Korea Joint Symposium on Advanced Solar Cells, 座長(Chairmanship).
2014.12.07~2014.12.11, Pacific Rim Symposium on Surfaces, Coatings and Interfaces, 座長(Chairmanship).
2014.10.24~2014.10.27, IUMRS-ICYRAM2014, Inter. Advisory Committee member.
2014.02.04~2014.02.07, 8th International Conference on Reactive Plasmas, 現地実行委員.
2013.09.23~2013.09.24, プラズマ材料科学シンポジウム, 運営委員.
2013.01.01~2014.12.31, The 35rd International Symposium on Dry Process, 論文委員.
2012.11.15~2012.11.16, The 33rd International Symposium on Dry Process (DPS 2011), 座長(Chairmanship).
2012.09.24~2012.09.25, 電気関係学会九州支部連合大会, 座長(Chairmanship).
2012.09.24~2012.09.28, International Union of Materials Research Societes-International Conference on Electronic Materials 2012, 座長(Chairmanship).
2012.09.23~2012.09.28, International Union of Materials Research Societes-International Conference on Electronic Materials 2012, シンポジウムチェア.
2012.04~2013.03, 電気関係学会九州支部連合大会 , プログラム委員長.
2012.03.17~2012.03.17, 応用物理学会2012年春季講演会, 座長(Chairmanship).
2012.02.01~2013.12.31, The 34rd International Symposium on Dry Process, 論文委員.
2011.11.22~2011.11.25, Plasma Conference 20, 座長(Chairmanship).
2011.11.10~2011.11.11, The 33rd International Symposium on Dry Process (DPS 2011), 座長(Chairmanship).
2011.04~2012.03, 電気関係学会九州支部連合大会 , プログラム副委員長.
2011.02.01~2011.12.01, The 33rd International Symposium on Dry Process, プログラム委員.
2011.02~2011.12, The 33rd International Symposium on Dry Process, 論文委員.
2010.11.01~2010.11.01, International technical conference of IEEE Region 10, 座長(Chairmanship).
2010.07~2010.10.01, 電気関係学会九州支部連合大会 , プログラム編集.
2010.06~2010.06.01, 九州表面・真空研究会2010, 座長(Chairmanship).
学会誌・雑誌・著書の編集への参加状況
2016.02~2019.03, Science and Technology of Advanced Materials (STAM), 国際, 編集委員.
2013.07~2013.10, The Physical Society of Japan. Conference Proceedings , 国際, 編集委員.
2012.08, Transactions of the Materials Research Society of Japan, 国際, 編集委員.
学術論文等の審査
年度 外国語雑誌査読論文数 日本語雑誌査読論文数 国際会議録査読論文数 国内会議録査読論文数 合計
2017年度   40    43 
2018年度   70    73 
2016年度   30    33 
2015年度   30    36 
2014年度   20    29 
2013年度      
2012年度   30   
2011年度      
2010年度    
受賞
第14回プラズマエレクトロニクス賞, 応用物理学会プラズマエレクトロニクス分科会, 2016.03.
さきがけ「太陽光と光電変換機能」研究領域 総括賞, 独立行政法人科学技術振興機構「太陽光と光電変換機能」研究領域, 2015.01.
プラズマ材料科学賞(奨励部門), 学振 153委員会, 2013.08.
Outstanding Poster Award, the 9th Asian-European International Conference on Plasma Surface Engineering 2013, 2013.08.
International Symposium on Sputtering and Plasma Processes 2013; Poster Award , International Symposium on Sputtering and Plasma Processes, 2013.07.
Award for Encouragement of Research in Materials Science , IUMRS-ICEM2012, 2012.09.
11th APCPST "Advanced Plasma Application Award", 11th Asia Pacific Conference on Plasma Science adn Technology (APCPST) & 25th Symposium on Plasma Science for Materials (SPSM), 2012.10.
Best Poster Presentation Award, th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials, 2012.03.
IUMRS-ICEM2012 "Young Scientist Awards: Silver Award Winners", 日本MRS, 2012.09.
ISPlasma2012 "Best Presentation Award", ISPlasma2012, 2012.03.
研究資金
科学研究費補助金の採択状況(文部科学省、日本学術振興会)
2018年度~2021年度, 基盤研究(B), 代表, スパッタエピタキシーによる革新的エキシトンデバイスの実現と励起子輸送機構の解明.
2015年度~2018年度, 若手研究(A), 代表, フラックス制御スパッタによる高品質酸窒化物の創製と新概念光スイッチへの応用.
2012年度~2014年度, 新学術領域研究, 分担, プラズマ・ナノマテリアル動態学の創成と安全安心医療科学の構築.
2013年度~2014年度, 挑戦的萌芽研究, 代表, 酸窒化物量子井戸中のエキシトン流を利用した高速・低消費電力トランジスタの創成.
2011年度~2012年度, 若手研究(B), 代表, 酸窒化物超格子のピエゾ電界を利用した室温動作エキシトニクスデバイスの創成.
2010年度~2013年度, 新学術領域研究, 分担, ナノ粒子含有プラズマによるナノ界面ボンドエンジニアリングの創生.
競争的資金(受託研究を含む)の採択状況
2011年度~2014年度, 戦略的創造研究推進事業 (文部科学省), 代表, 新規酸窒化物を用いたピエゾ電界誘起量子井戸型太陽電池の創製.
2010年度~2012年度, 産業技術研究助成事業 (経済産業省), 分担, ナノ粒子制御によるa-Siセルの高光安定化に関する研究.
共同研究、受託研究(競争的資金を除く)の受入状況
2017.11~2022.03, 代表, 光電子集積回路を実現する革新的エキシトニクスデバイスの創製.
寄附金の受入状況
2016年度, 公益財団法人 池谷科学技術振興財団, 新材料ZIONを用いた超小型・高速E/O変換デバイスの創製.
2014年度, 公益財団法人 村田学術振興財団 , 研究助成/2次元エキシトンガスをチャネルとした超高速・超低消費電力トランジスタの創成
.
2013年度, 材料科学技術振興財団, 研究助成/高速・低消費電力エキシトニックトランジスタを実現する新材料ZnInON歪量子井戸チャネルの開発.
2012年度, 公益財団法人豊田理化学研究所, 豊田理研スカラー/室温動作型エキシトニックトランジスタを実現する新規酸窒化物半導体材料の創成.
2011年度, 公益財団法人 徳山科学技術振興財団, 国際交流助成 .
2011年度, 財団法人九州大学後援会, 財団法人九州大学後援会 「教員の研究プロジェクト」/エキシトニクス流を用いた超高速・超低消費電力型新概念トランジスタの創
成.
2010年度, 矢崎科学技術振興記念財団, 矢崎科学技術振興記念財団
2010(H22)年度『国際交流援助』
High quality ZnO films prepared by solid-phase crystallization of amorphous ZnON films.
学内資金・基金等への採択状況
2012年度~2012年度, 九州大学教育研究プログラム・研究拠点形成プロジェクト, 代表, 酸窒化インジウム亜鉛中のエキシトン流を利用した超高速・超低消費電力トランジスタの開発.
2010年度~2010年度, 九州大学女性研究者キャリア開発センター国際学会派遣支援, 代表, Solid phase crystallization of ZnO films via nitrogen-atom mediation.
2010年度~2010年度, 九州大学女性研究者キャリア開発センター国際学会派遣支援, 代表, Novel Fabrication Method For Transparent Conducting Oxide Films Utilizing Solid-Phase Crystallized Seed Layers .

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