Kyushu University Academic Staff Educational and Research Activities Database
List of Presentations
DONG WANG Last modified date:2018.06.16

Associate Professor / Global Innovation Center / Department of Internationalization and Future Conception / Faculty of Engineering Sciences


Presentations
1. W.-C. Wen, T. Sakaguchi, K. Yamamoto, DONG WANG and H. Nakashima, Evaluation of border-traps in GeO2/Ge gate stacks grown by thermal oxidation and plasma oxidation, 2018年第65回応用物理学会春季学術講演会, 2018.03.
2. H. Nakashima, W.-C. Wen, K. Yamamoto and DONG WANG, Near-interface border-traps characterization by deep-level transient spectroscopy for GeO2/Ge gate stacks, 11th International Workshop on New Group IV Semiconductor Nanoelectronics, 2018.02.
3. H. Nakashima, H. Okamoto, K. Yamamoto, and DONG WANG, Achievement of Ultralow Contact Resistivity of Metal/n+-Ge Contacts with Zr-N-Ge Amorphous Interlayer, 232nd ECS meeting, 2017.10.
4. T. Sakaguchi, K. Akiyama, K. Yamamoto, DONG WANG, and H. Nakashima, Dependence of Channel Mobility on Substrate Impurity Concentration for Metal Source/Drain Ge MOSFETs, 2017 International Conference on Solid State Devices and Materiaals (SSDM2017), 2017.09.
5. W.-C. Wen, T. Sakaguchi, K. Yamamoto, DONG WANG, and H. Nakashima, Characterization of near-interface border-traps in GeO2/Ge gate stacks grown by low and high temperature thermal oxidation
using deep-level transient spectroscopy, 2017 International Conference on Solid State Devices and Materiaals (SSDM2017), 2017.09.
6. W.-C. Wen, T. Sakaguchi, K. Yamamoto, DONG WANG, and H. Nakashima, Near-interface border traps characterization for GeO2/Ge gate stacks grown by low and high temperature thermal oxidation by using deep-level transient spectroscopy, 2017年第78回応用物理学会秋季学術講演会, 2017.09.
7. W.-C. Wen, T. Sakaguchi, K. Yamamoto, DONG WANG, and H. Nakashima, Near-interface border-traps characterization by deep-level transient spectroscopy for GeO2/Ge gate stacks, The 10th International Conference on Silicon Epitaxy and heterostructures, 2017.05.
8. T. Maekura, C. Motoyama, K. Tanaka, K. Yamamoto, H. Nakashima, and DONG WANG, Effect of n-type doping level on direct band gap light emission intensity for asymmetric metal/Ge/metal diodes, The 10th International Conference on Silicon Epitaxy and heterostructures, 2017.05.
9. DONG WANG, Towards an energy-saving society – the shrinking transistors, CAMPUS Asia EEST 2nd stage Kick-off Symposium, 2017.02.
10. Keisuke Yamamoto, H. Okamoto, DONG WANG, Hiroshi Nakashima, Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer, 10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar, 2017.02.
11. T. Maekura, C. Motoyama, K. Tanaka, Keisuke Yamamoto, Hiroshi Nakashima, DONG WANG, Effect of n-type doping level on direct band gap light emission intensity for asymmetric metal/Ge/metal diodes, 10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar, 2017.02.
12. C. Motoyama, T. Maekura, K. Tanaka, DONG WANG, Keisuke Yamamoto, Hiroshi Nakashima, Influence of Al-PMA for fin type asymmetric metal/germanium/metal diodes, 平成28年度応用物理学会九州支部学術講演会 International Session, 2016.12.
13. W.-C. Wen, Y. Nagatomi, Liwei Zhao, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, TOF-SIMS and XPS analyses for investigation of Al post-metallization annealing effect for Ge MOS capacitors with SiO2/GeO2 bilayer passivation, 平成28年度応用物理学会九州支部学術講演会 International Session, 2016.12.
14. T. Tateyama, Y. Nagatomi, S. Tanaka, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Achievement of low parasitic resistance in Ge n-MOSFET with embedded TiN source/drain structure, 平成28年度応用物理学会九州支部学術講演会 International Session, 2016.12.
15. Hiroshi Nakashima, H. Okamoto, Keisuke Yamamoto, DONG WANG, Electrical Properties of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer, JSPS Core-to-Core Program “Atomically Controlled Processing for Ultralarge Scale Integration”, 2016.11.
16. H. Okamoto, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer, 2016 International Conference on Solid State Devices and Materials, 2016.09.
17. Keisuke Yamamoto, H. Okamoto, DONG WANG, Hiroshi Nakashima, Characterization of Ge Tunnel FET with Metal/Ge Junction, 7th Int. Symp. on Control of Semiconductor Interfaces and Int. SiGe Technology and Device Meeting 2016, 2016.06.
18. Y. Nagatomi, S. Tanaka, T. Tateyama, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Mobility enhancement in Ge p-MOSFET due to introduction of Al atoms in SiO2/GeO2 gate stacks, 7th Int. Symp. on Control of Semiconductor Interfaces and Int. SiGe Technology and Device Meeting 2016, 2016.06.
19. DONG WANG, Direct band gap light emission and detection at room temperature in bulk Ge diodes, The 2nd Joint Symposium of Kyushu University and Yonsei University, 2016.02.
20. Takayuki Maekura, Chisato Motoyama, Keisuke Yamamoto, Hiroshi Nakashima, DONG WANG, Influences of metal/Ge contact and surface passivation on direct band gap light emission and detection for asymmetric metal/Ge/metal diodes, 9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, 2016.01.
21. Yuta Nagatomi, Shintaro Tanaka, Tomoki Tateyama, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Mechanism of mobility enhancement in Ge p-MOSFET due to introduction of Al atoms in SiO2/GeO2 gate stacks, 9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, 2016.01.
22. Hiroshi Nakashima, Keisuke Yamamoto, DONG WANG, Electrical properties of metal-nitride/Ge contacts and the application to Ge optoelectronic devices, The 2nd International Conference & Exhibition for Nanopia, 2015.11.
23. DONG WANG, Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima, Direct band gap light emission and detection in lateral HfGe/Ge/TiN diodes, American Vacuum Society (AVS) Shanghai Thin Film Conference, 2015.10.
24. Hiroshi Nakashima, Keisuke Yamamoto, DONG WANG, Electrical characterization of SiGe-on-insulator fabricated using Ge condensation by dry oxidation, American Vacuum Society (AVS) Shanghai Thin Film Conference, 2015.10.
25. Hiroshi Nakashima, Keisuke Yamamoto, DONG WANG, Electrical Properties of Group 4 Metal-Nitride/Ge Contacts and the Application to Ge Optoelectronic Devices, 228th ECS Meeting, 2015.10.
26. Takayuki Maekura, DONG WANG, Keisuke Yamamoto, Hiroshi Nakashima, Influences of Metal/Ge Contact and Surface Passivation on Light Emission and Detection for Asymmetric Metal/Ge/Metal Diodes, 2015 International Conference on Solid State Devices and Materials (SSDM2015), 2015.09.
27. Shintaro Tanaka, Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, PtGe-Source/Drain Ge p-MOSFET with High On/Off Ratio and Low Parasitic Resistance, 2015 International Conference on Solid State Devices and Materials (SSDM2015), 2015.09.
28. DONG WANG, Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima, Direct-bandgap light emission and detection at room temperature in bulk-Ge diodes with HfGe/Ge/TiN structure, The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9), 2015.05.
29. Keisuke Yamamoto, Ryutaro Noguchi, Masatoshi Mitsuhara, Minoru Nishida, Toru Hara, DONG WANG, Hiroshi Nakashima, Barrier Height Modulation for Metal/Ge Contacts with Nitrogen-Contained Amorphous Interlayers, The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9), 2015.05.
30. Hiroshi Nakashima, Keisuke Yamamoto, DONG WANG, Masatoshi Mitsuhara, Ryutaro Noguchi, Keisuke Hiidome, Minoru Nishida, Contact Formation for Metal Source/Drain Ge-CMOS, The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9), 2015.05.
31. Yuta Nagatomi, Yuichi Nagaoka, Shintaro Tanaka, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Effect of Al Post Metallization Annealing on Al2O3/GeO2/Ge Gate Stack, 8th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, 2015.01.
32. Keisuke Yamamoto, Ryutaro Noguchi, Masatoshi Mitsuhara, Minoru Nishida, Toru Hara, DONG WANG, Hiroshi Nakashima, Electrical Properties of Metal/Ge Contacts with Nitrogen-Contained Amorphous Interlayers, 8th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, 2015.01.
33. Hiroshi Nakashima, Keisuke Yamamoto, DONG WANG, Masatoshi Mitsuhara, Ryutaro Noguchi, Keisuke Hiidome, Minoru Nishida, Contact properties of group IV metal-nitrides(TiN, ZrN, HfN) on Ge, JSPS Core-to-Core Program,“Atomically Controlled Processing for Ultralarge Scale Integration”, 2014.11.
34. Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Investigation of Al-PMA Effect on Al2O3/GeOX/Ge Gate Stack, 226th ECS Meeting, 2014.10.
35. Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Effect of Kr/O2ECR Plasma Oxidation on Electrical Properties of Al2O3/Ge Gate Stacked Fabricated by ALD, 2014 International Conference on Solid State Devices and Materials (SSDM2014), 2014.09.
36. DONG WANG, Sho Kamezawa, Keisuke Yamamoto, Hiroshi Nakashima, Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric metal/germanium/metal structure, 7th International Silicon-Germanium Technology and Device Meeting, 2014.06.
37. Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Fermi Level Pinning Alleviation at the TiN, ZrN, and HfN/Ge Interfaces, 7th International Silicon-Germanium Technology and Device Meeting, 2014.06.
38. Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Fabrication of Metal-Nitride/Ge Contacts with Extremely Low Electron Barrier Height and Its Clarification of the Physical Origin, 7th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, "Atomically Controlled Processsing for Ultralarge Scale Integration", 2014.01.
39. Hiroshi Nakashima, Keisuke Yamamoto, DONG WANG, Fabrication of Ge MOS and Ge Light Emitting Devices Using Contacts with Low Electron and Hole Barrier Heights, 7th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, "Atomically Controlled Processsing for Ultralarge Scale Integration", 2014.01.
40. Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Fabrication of Metal-Nitride/Si Contactswith Low Electron Barrier Height, 224th ECS Meeting, 2013.10.
41. Hiroshi Nakashima, Keisuke Yamamoto, DONG WANG, Development of Metal Source/Drain Ge-CMOS Using TiN/Ge and HfGe/Ge contacts, 224th ECS Meeting, 2013.10.
42. Keisuke Yamamoto, Takahiro Sada, DONG WANG, Hiroshi Nakashima, Metal Source/Drain Ge p-MOSFET with HfGe/Ge Contact, The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), 2013.06.
43. Keisuke Yamamoto, Kojiro Asakawa, DONG WANG, Hiroshi Nakashima, Fabrication of TiN/Si Contact with Low Electron Barrier Height and Its Application to Back-Gate MOSFET, The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), 2013.06.
44. Kota Hatayama, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Low temperature fabrication of Ohmic contact for p-type 4H-SiC using Al/Ti/Sn, The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), 2013.06.
45. DONG WANG, Yuta Nagatomi, Shuta Kojima, Sho Kamezawa, Keisuke Yamamoto, Hiroshi Nakashima, An accurate characterization of metal-insulator-semiconductor interface-state by deep-level transient spectroscopy and its application on Y2O3/Ge gate stacks with ultrathin GeOx interlayer, The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), 2013.06.
46. Hiroshi Nakashima, Yamamoto Keisuke, DONG WANG, Contact Formations for Schottky Source/Drain Ge-CMOS, 6th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, 2013.02.
47. Hiroshi Nakashima, K. Yamamoto, H. Yang, DONG WANG, Gate Stack and Source/Drain Junction Formations for High-Mobility Ge MOSFETs, 222nd ECS Meeting, 2012.10.
48. T. Sada, K. Yamamoto, H. Yang, DONG WANG, Hiroshi Nakashima, High Hole-Mobility Ge p-MOSFET with HfGe Schottky Source/Drain, 2012 International Conference on Solid State Devices and Materials, 2012.09.
49. K. Asakawa, K. Yamamoto, DONG WANG, Hiroshi Nakashima, Fabrication of TiN/Si Contact with Low Electron Barrier Height and Electrical Characterization of Si-On-Insulator Using Back-Gate MOSFET, 2012 International Conference on Solid State Devices and Materials, 2012.09.
50. S. Kojima, K. Sakamoto, Y. Iwamura, K. Hirayama, K. Yamamoto, DONG WANG, Hiroshi Nakashima, Fabrication of ZrSiO/Ge Gate Stacks with GeO2 and ZrGeO Interlayers, 2012 International Conference on Solid State Devices and Materials, 2012.09.
51. Takeshi Yamanaka, Keisuke Yamamoto, Keita Sakamoto, Haigui Yang, DONG WANG, Hiroshi Nakashima, High-Electron-Mobility Ge n-MOSFET with TiN Metal Gate, 2011 International Conference on Solid State Devices and Materials (SSDM2011), 2011.09.
52. Keita Sakamoto, Yoshiaki Iwamura, Keisuke Yamamoto, Haigui Yang, DONG WANG, Hiroshi Nakashima, Effective Passivation of Interface Dipole in TiN-Gate Ge-MOS Capacitor with Ultrathin SiO2/GeO2 Bilayer by Nitrogen Incorporation, 2011 International Conference on Solid State Devices and Materials (SSDM2011), 2011.09.
53. DONG WANG, Keisuke Yamamoto, Hongye Gao, Haigui Yang, Hiroshi Nakashima, Defect Evaluation by Photoluminescence for Uniaxially Strained Si-on-insulator, China Semiconductor Technology International Conference 2011 (CSTIC2011), 2010.03.