Kyushu University Academic Staff Educational and Research Activities Database
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DONG WANG Last modified date:2017.06.18



Graduate School
Other Organization


E-Mail
Homepage
http://www.gic.kyushu-u.ac.jp/nakasima/index_e.htm
Functional Devices, Advanced Project Division, Global Innovation Center, Kyushu Univeristy .
Phone
092-583-7637
Fax
092-583-8962
Academic Degree
PhD
Field of Specialization
Electronic Materials Engineering, Semiconductor Materials Engineering, Optics
Outline Activities
After employed by Art, Science and Technology Center for Cooperative Research, I focused on the research on local-strain evaluation as well as the formation and characterization for SiGe on Insulator and Ge on Insulator.
From Feb. 2012, I work at CAMPUS-Asia, Faculty of Engineering Sciences to promote the “Collaborative Graduate School Program for Global Human Resources Development in Energy and Environmental Science and Technology”.
From Mar. 2016, I start working at Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, and being incharge of promoting international education and international student affairs.
Recentlay I have been focusing on development of Ge-optoelectronics and Ge-CMOS related technologies.
Based on above researches, several proposals were applied and adopted, such as a two JSPS Grant-in-Aid (KAKENHI) for Scientific Research (B), two JSPS Grant-in-Aid (KAKENHI) for Young Scientists (B), and a Grant-in-Aid from the Marubun Research Promotion Foundation.
Research
Research Interests
  • Technology development for Ge-CMOS compatible high-performance Ge-optoelectronics
    keyword : Ge optoelectronics, CMOS, Functional electrical materials, Metal/Semiconductor contact, Local strain
    2013.06.
  • Evaluation technique for crystal semiconductor thin film on insulator
    keyword : SOI, SGOI, photoluminescence, DLTS
    2001.12.
  • Strained Ge Technology
    keyword : strained-Ge, strained-SiGe, MOSFET, Back-Gate MOSFET, mobility Enhancement, Interface State Density, Ge condensation by Dry Oxidation, Local Ge condensation by Dry Oxidation
    2009.10.
  • Strained Si Technology
    keyword : Strained-Si, SiGe, SOI, MOS, minority carrier generation lifetime, DLTS, Interface State, Photoluminescence
    2002.10.
  • Study on Fabrication Process for Ge-MISFET
    keyword : Ge channel, Ge On Insulator, high-k On Ge, Metal Gate, S-D formation
    2007.04.
  • Control of heavy metal impurities in Si wafer
    keyword : solar cell, Si wafer, heavy metal impurity, gettering, DLTS
    2001.12~2006.03.
  • Formation of High-K gate-stack structure
    keyword : high-k, ECR plasma, SiO2. SiON, SiN, HfO2, stack structure, metal-gate
    2001.12~2008.03.
Academic Activities
Reports
1. [Strained Si wafer technology for high-speed LSI]
Although Si-LSI technology has achieved high-speed and low-power-consumption devices by device shrinkage, there is a possibility that the device shrinkage will encounter difficulties. Thus, next-generation LSI technology requires an alternative method of achieving high-performance devices. A strained Si/SiGe heterostructure has a large potential, because Si on strain-relaxed SiGe receives tensile strain, causing the enhancement of carrier mobility. We have demonstrated a 200 mm strained-Si wafer fabrication technique. In this report, we introduce this fabrication technique and the electrical properties of the fabricated wafer. A test circuit was also fabricated to characterize the quality of the strained Si wafer. In addition, we introduce a technique of enhancing the strain relaxation of a SiGe virtual substrate on SiO2. , [URL].
Papers
1. Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima, DONG WANG, Effects of metal/Ge contact and surface passivation on direct band gap light emission and detection for asymmetric metal/Ge/metal diodes, JAPANESE JOURNAL OF APPLIED PHYSICS, 55, 4S, 2016.04.
2. DONG WANG, Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima, Direct band gap light emission and detection at room temperature in bulk germanium diodes with HfGe/Ge/TiN structure, THIN SOLID FILMS, 602, 43-47, 2016.03.
3. DONG WANG, Takayuki Maekura, Sho Kamezawa, Keisuke Yamamoto, Hiroshi Nakashima, Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric fin type metal/germanium/metal structure, APPLIED PHYSICS LETTERS, 106, 7, 2015.02.
4. DONG WANG, Yuta Nagatomi, Shuta Kojima, Yamamoto Keisuke, Hiroshi Nakashima, Low-temperature fabrication of Y2O3/Ge gate stacks with ultrathin GeOx interlayer and low interface states density characterized by a reliable deep-level transient spectroscopy method, Thin Solid Films, 557, 2014.04.
5. DONG WANG, Shuta Kojima, Keita Sakamoto, Keisuke Yamamoto, Hiroshi Nakashima, An accurate characterization of interface-state by deep-level transient spectroscopy for Ge metal-insulator-semiconductor capacitors with SiO2/GeO2 bilayer passivation, Journal of Applied Physics, 112, 8, 2012.10.
6. DONG WANG, Keisuke Yamamoto, Hongye Gao, Haigui Yang, Hiroshi Nakashima, Defect Evaluation by Photoluminescence for Uniaxially Strained Si-On-Insulator, Journal of The Electrochemical Society, 158, 12, 2011.12.
7. DONG WANG, Keisuke Yamamoto, Hongye Gao, Haigui Yang, Hiroshi Nakashima, Defect Evaluation by Photoluminescence for Uniaxially Strained Si-On-Insulator, The Electrochemical Society Transactions, 34, 1, 2011.01.
8. DONG WANG, Haigui Yang, Hiroshi Nakashima, Defect characterization and control for SiGe-on-insulator (Invited), Proceeding of 10th International Conference on Solid-State and Integrated-Circuit Technology(ICSICT2010), 2010.11.
9. DONG WANG, Haigui Yang, Tokuhide Kitamura, Hiroshi Nakashima, 325 nm-laser-excited micro-photoluminescence for strained Si films, THIN SOLID FILMS, 518, 9, 2010.02.
10. DONG WANG, Haigui Yang, Tokuhide Kitamura, Hiroshi Nakashima, Influence of freely diffusing excitons on the photoluminescence spectrum of Si thick films with depth distribution of strain, Journal of Applied Physics, 107, 2010.02.
11. DONG WANG, Hiroshi Nakashima, Optical and electrical evaluations of SiGe layers on insulator fabricated using Ge condensation by dry oxidation, Solid-State Electronics, 53, 2009.08.
12. DONG WANG, Hiroshi Nakashima, Masanori Tanaka, Taizoh SADOH, Masanobu Miyao, Jun Morioka, Tokuhide Kitamura, Local strain evaluation of single crystal Si pillar by micro Raman spectroscopy and photoluminescence, THIN SOLID FILMS, 517, 1, 2008.11.
13. DONG WANG, Haigui Yang, Jun Morioka, Tokuhide Kitamura, Hiroshi Nakashima, Local strain evaluation for freestanding Si membranes by microphotoluminescence using UV laser excitation, Proceeding of 9th International Conference on Solid-State and Integrated-Circuit Technology(ICSICT2008), 2008.10.
14. DONG WANG, Hiroshi Nakashima, Jun Morioka, Tokuhide Kitamura, Microphotoluminescence evaluation of local strain for freestanding Si membranes with SiN deposition, APPLIED PHYSICS LETTERS, 91, 2007.12.
15. DONG WANG, Seiichiro Ii, Ken-ichi Ikeda, Hideharu Nakashima, Koji Matsumoto, Masahiko Nakamae, Hiroshi Nakashima, Photoluminescence and TEM evaluations of defects generated during SiGe-on-insulator virtual substrate fabrication: Temperature ramping process, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 253, 1-2, 2006.12.
16. DONG WANG, Seiichiro Ii, Ken-ichi Ikeda, Hideharu Nakashima, Hiroshi Nakashima, Photoluminescence Evaluation of Defects Generated during Temperature Ramp-up Process of SiGe-On-Inslator Virtual Substrate Fabrication, Proceeding of 8th International Conference on Solid-State and Integrated-Circuit Technology(ICSICT2006), 2006.10.
17. DONG WANG, Seiichiro Ii, Hiroshi Nakashima, Ken-ichi Ikeda, Hideharu Nakashima, Koji Matsumoto, Masahiko Nakamae, Photoluminescence evaluation of defects generated during SiGe-on-insulator virtual substrate fabrication: Temperature ramping process, APPLIED PHYSICS LETTERS, 89, 4, 2006.07.
18. DONG WANG, Seiichiro Ii, Ken-ichi Ikeda, Hideharu Nakashima, Masaharu Ninomiya, Masahiko Nakamae, Hiroshi Nakashima, Structural and electrical evaluation for strained Si/SiGe on insulator, THIN SOLID FILMS, 508, 1-2, 2006.06.
19. DONG WANG, Koji Matsumoto, Masahiko Nakamae, Hiroshi Nakashima, Photoluminescence characterization of strained Si-SiGe-on-insulator wafers, JAPANESE JOURNAL OF APPLIED PHYSICS, 45, 4B, 2006.04.
20. DONG WANG, Asami Ueda, Hideki Takada, Hiroshi Nakashima, Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurements, PHYSICA B-CONDENSED MATTER, 376-377, 2006.04.
21. DONG WANG, Hiroshi Nakashima, Koji Matsumoto, Masahiko Nakamae, Photoluminescence characterization of strained Si-SiGe-on-insulator wafers with different Ge fractions, APPLIED PHYSICS LETTERS, 87, 25, 2005.12.
22. DONG WANG, Masaharu Ninomiya, Masahiko Nakamae, Hiroshi Nakashima, Evaluation of interface states density and minority carrier generation lifetime for strained Si/SiGe wafers using transient capacitance method, JAPANESE JOURNAL OF APPLIED PHYSICS, 44, 4B, 2005.04.
23. DONG WANG, Masaharu Ninomiya, Masahiko Nakamae, Hiroshi Nakashima, Electrical characterization of strained Si/SiGe wafers using transient capacitance measurements, APPLIED PHYSICS LETTERS, 86, 12, 2005.03.
24. DONG WANG, Masaharu Ninomiya, Masahiko Nakamae, Hiroshi Nakashima, Evaluation of Interface States and Minority Carrier Generation Lifetime for Strained Si/SiGe Wafers Using Transient Capacitance Method, Proceeding of 7th International Conference on Solid-State and Integrated-Circuit Technology(ICSICT2004), 2004.10.
25. DONG WANG, Jin-Yue Gao, Ji-Hua Xu, Giuseppe C. La Rocca, F. Bassani, Control of two-photon absorption by using electromagnetic field in sodium and rubidium vapors, Proceedings of the Society of Photographic Instrumentation Engineers, 4458, 2001.11.
26. DONG WANG, Jin-Yue Gao, Ji-Hua Xu, Giuseppe C. La Rocca, F. Bassani, Electromagnetically induced two-photon transparency in rubidium atoms, EUROPHYSICS LETTERS, 54, 4, 2001.05.
27. DONG WANG, Jin-Yue Gao, Ji-Hua Xu, Giuseppe C. La Rocca, F. Bassani, Electromagnetically induced two-photon transparency in a four level system of rubidium atom, Proceedings of the Society of Photographic Instrumentation Engineers, 4397, 2001.04.
Presentations
1. DONG WANG, Towards an energy-saving society – the shrinking transistors, CAMPUS Asia EEST 2nd stage Kick-off Symposium, 2017.02.22.
2. DONG WANG, Direct band gap light emission and detection at room temperature in bulk Ge diodes, The 2nd Joint Symposium of Kyushu University and Yonsei University, 2016.02.04.
3. DONG WANG, Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima, Direct band gap light emission and detection in lateral HfGe/Ge/TiN diodes, American Vacuum Society (AVS) Shanghai Thin Film Conference, 2015.10.24.
4. DONG WANG, Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima, Direct-bandgap light emission and detection at room temperature in bulk-Ge diodes with HfGe/Ge/TiN structure, The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9), 2015.05.20.
5. DONG WANG, Sho Kamezawa, Keisuke Yamamoto, Hiroshi Nakashima, Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric metal/germanium/metal structure, 7th International Silicon-Germanium Technology and Device Meeting, 2014.06.03.
6. DONG WANG, Yuta Nagatomi, Shuta Kojima, Sho Kamezawa, Keisuke Yamamoto, Hiroshi Nakashima, An accurate characterization of metal-insulator-semiconductor interface-state by deep-level transient spectroscopy and its application on Y2O3/Ge gate stacks with ultrathin GeOx interlayer, The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), 2013.06.04.
7. DONG WANG, Keisuke Yamamoto, Hongye Gao, Haigui Yang, Hiroshi Nakashima, Defect Evaluation by Photoluminescence for Uniaxially Strained Si-on-insulator, China Semiconductor Technology International Conference 2011 (CSTIC2011), 2010.03.14.
Membership in Academic Society
  • The Japan Society of Applied Physics
Educational
Other Educational Activities
  • 2017.03.
  • 2016.12.
  • 2016.12.
  • 2016.12.
  • 2016.09.
  • 2016.08.
  • 2016.03.
  • 2015.09.
  • 2015.08.
  • 2015.03.
  • 2014.12.
  • 2014.09.
  • 2014.08.
  • 2013.09.
  • 2013.08.
  • 2012.09.
  • 2012.08.