Kyushu University Academic Staff Educational and Research Activities Database
List of Presentations
Yamamoto Keisuke Last modified date:2018.10.19

Assistant Professor / Department of Internationalization and Future Conception / Faculty of Engineering Sciences


Presentations
1. K. Yamamoto, D. Wang, H. Nakashima, S. Hishiki, K. Kawamura, Impact of Al2O3 interlayer for metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC for electronic device application, 2018 International Conference on Solid State Device and Materials (SSDM 2018), 2018.09.
2. T. Maekura, T. Goto, K. Nakae, K. Yamamoto, H. Nakashima, D. Wang, Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-Insulator substrate, 2018 International Conference on Solid State Device and Materials (SSDM 2018), 2018.09.
3. K. Yamamoto, K. Nakae, D. Wang, H. Nakashima, Z. Xue, M. Zhang, Z. Di, Ambipolar operation of asymmetric Ge Schottky tunneling source field-effect transistor fabricated on Ge-on-Insulator, 2018 International Conference on Solid State Device and Materials (SSDM 2018), 2018.09.
4. T. Kanashima, H. Furusho, K. Takeyama, H. Nohira, K. Yamamoto, H. Nakashima, Improvement of Interface Properties of Ge-MISFET with Crystalline La2O3 high-k/Ge(111) Gate Stacks by Wet Treatments, 2018 International Conference on Solid State Device and Materials (SSDM 2018), 2018.09.
5. Hiroshi Nakashima, Wei-Chen Wen, Keisuke Yamamoto, Dong Wang, Near-interface border-traps characterization by deep-level transient spectroscopy for GeO2/Ge gate stacks, 11th International Workshop on New Group IV Semiconductor Nanoelectronics, 2018.02.
6. Hiroshi Nakashima, Hayato Okamoto, Keisuke Yamamoto, Dong Wang, Achievement of Ultralow Contact Resistivity of Metal/n+-Ge Contacts with Zr-N-Ge Amorphous Interlayer, 232nd ECS meeting, 2017.10.
7. Taisei Sakaguchi, Kentaro Akiyama, Keisuke Yamamoto, Hiroshi Nakashima, Dong Wang, Dependence of Channel Mobility on Substrate Impurity Concentration for Metal Source/Drain Ge MOSFETs, 2017 International Conference on Solid State Device and Materials (SSDM 2017), 2017.09, [URL].
8. Wei-Chen Wen, Taisei Sakaguchi, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima, Characterization of near-interface border-traps in GeO2/Ge gate stacks grown by low and high temperature thermal oxidation using deep-level transient spectroscopy
, 2017 International Conference on Solid State Device and Materials (SSDM 2017), 2017.09, [URL],
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9. Wei-Chen Wen, Taisei Sakaguchi, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima, Near-interface border-traps characterization by deep-level transient spectroscopy for GeO2/Ge gate stacks, The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10), 2017.05, [URL].
10. Takayuki Maekura, Chisato Motoyama, Kentaro Tanaka, Keisuke Yamamoto, Hiroshi Nakashima, Dong Wang, Effect of n-type doping level on direct band gap light emission intensity for asymmetric metal/Ge/metal diodes, The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10), 2017.05, [URL].
11. Takayuki Maekura, Chisato Motoyama, Kentaro Tanaka, Keisuke Yamamoto, Hiroshi Nakashima, DONG WANG, Effect of n-type doping level on direct band gap light emission intensity for asymmetric metal/Ge/metal diodes, 10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", 2017.02.
12. Keisuke Yamamoto, Hayato Okamoto, DONG WANG, Hiroshi Nakashima, Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer, 10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", 2017.02.
13. Hiroshi Nakashima, Hayato Okamoto, Keisuke Yamamoto, Dong Wang, Electrical Properties of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer, JSPS Core-to Core Program "Atomically Controlled Processsing for Ultralarge Scale Integration", 2016.11.
14. Hayato Okamoto, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima, Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer, 2016 International Conference on Solid State Device and Materials (SSDM 2016), 2016.09.
15. Kenji Kasahara, Hidenori Higashi, Mario Nakano, Yuta Nagatomi, Keisuke Yamamoto, Hiroshi Nakashima, Kohei Hamaya, Effect of Post Annealing on Hole Mobility of Pseudo-Single-Crystalline Germanium Thin-Film-Transistors on Glass Substrates, 7th International Symposium on Control of Semiconductor Interfaces / International SiGe Technology and Device Meeting, 2016.06, [URL].
16. Takeshi Kanashima, Masato Zenitaka, Keisuke Yamamoto, Riku Yamashiro, Hiroshi Nohira, Hiroshi Nakashima, Shinya Yamada, Kohei Hamaya, Improvement of C-V Characteristics in LaYO3/La2O3/Ge(111) MIS Structures, 7th International Symposium on Control of Semiconductor Interfaces / International SiGe Technology and Device Meeting, 2016.06, [URL].
17. Keisuke Yamamoto, Hayato Okamoto, DONG WANG, Hiroshi Nakashima, Characterization of Ge Tunnel FET with Metal/Ge Junction, 7th International Symposium on Control of Semiconductor Interfaces / International SiGe Technology and Device Meeting, 2016.06, [URL].
18. Yuta Nagatomi, Tomoki Tateyama, Shintaro Tanaka, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Mobility enhancement in Ge p-MOSFET due to introduction of Al atoms in SiO2/GeO2 gate stacks, 7th International Symposium on Control of Semiconductor Interfaces / International SiGe Technology and Device Meeting, 2016.06, [URL].
19. Takayuki Maekura, Chisato Motoyama, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Influences of metal/Ge contact and surface passivation on direct band gap light emission and detection for asymmetric metal/Ge/metal diodes, 9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", 2016.01.
20. Yuta Nagatomi, Shintaro Tanaka, Tomoki Tateyama, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Mechanism of mobility enhancement in Ge p-MOSFET due to introduction of Al atoms in SiO2/GeO2 gate stacks, 9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", 2016.01.
21. Takayuki Maekura, Dong Wang, Keisuke YAMAMOTO, Hiroshi Nakashima, Influences of Metal/Ge Contact and Surface Passivation on Light Emission and Detection for Asymmetric Metal/Ge/Metal Diodes, 2015 International Conference on Solid State Device and Materials (SSDM 2015) , 2015.09.
22. Shintaro Tanaka, Yuta Nagatomi, Yuichi Nagaoka, Keisuke YAMAMOTO, Dong Wang, Hiroshi Nakashima, PtGe-Source/Drain Ge p-MOSFET with High On/Off Ratio and Low Parasitic Resistance, 2015 International Conference on Solid State Device and Materials (SSDM 2015) , 2015.09.
23. Dong Wang, Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima, Direct-bandgap Light Emission and Detection at Room Temperature in Bulk-Ge Diodes with HfGe/Ge/TiN Structure, 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9), 2015.05, [URL].
24. Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang, Masatoshi Mitsuhara, Ryutaro Noguchi, Keisuke Hiidome, Minoru Nishida, Contact Formation for Metal Source/Drain Ge-CMOS, 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9), 2015.05, [URL].
25. Keisuke Yamamoto, Ryutaro Noguchi, Masatoshi Mitsuhara, Minoru Nishida, Toru Hara, Dong Wang, Hiroshi Nakashima, Barrier Height Modulation for Metal/Ge Contacts with Nitrogen-Contained Amorphous Interlayers, 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9), 2015.05, [URL].
26. Nakashima Hiroshi, Keisuke Yamamoto, WANG DONG, Mitsuhara Masatoshi, Noguchi Ryutaro, Hiidome Keisuke, Minoru Nishida, Contact properties of group IV metal-nitrides (TiN, ZrN, HfN) on Ge, JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration", 2014.11.
27. Yuta Nagatomi, Yuichi Nagaoka, Yamamoto Keisuke, DONG WANG, Hiroshi Nakashima, Investigation of Al-PMA Effect on Al2O3/GeOX/Ge Gate Stack, 226th ECS Meeting, 2014.10, [URL].
28. Yamamoto Keisuke, DONG WANG, Hiroshi Nakashima, Fermi level pinning alleviation at the TiN, ZrN, and HfN/Ge interfaces, 7th International Silicon-Germanium Technology and Device Meeting (ISTDM 2014), 2014.06, [URL].
29. DONG WANG, Sho Kamezawa, Yamamoto Keisuke, Hiroshi Nakashima, Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric metal/germanium/metal structure
, 7th International Silicon-Germanium Technology and Device Meeting (ISTDM 2014), 2014.06, [URL].
30. Nagatomi Yuta, Nagaoka Yuichi, Tanaka Shintaro, Keisuke Yamamoto, WANG DONG, Nakashima Hiroshi, Effect of Al post metallization annealing on Al2O3/GeOx/Ge gate stacks
, 8th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", 2014.01.
31. Keisuke Yamamoto, WANG DONG, Nakashima Hiroshi, Noguchi Ryutaro, Nishida Minoru, Mitsuhara Masatoshi, Hara Toru, Electrical Properties of Metal/Ge contacts with Nitrogen-Contained Amorphous Interlayers, 8th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", 2014.01.
32. Keisuke Yamamoto, WANG DONG, Nakashima Hiroshi, Fabrication of Metal-Nitride/Ge Contacts with Extremely Low Electron Barrier Height and Its Clarification of the Physical Origin, 7th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", 2014.01.
33. Nakashima Hiroshi, Keisuke Yamamoto, WANG DONG, Fabrication of MOS and Light Emitting Devices Using Contacts with Low Electron and Hole Barrier Heights, 7th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", 2014.01.
34. Yamamoto Keisuke, DONG WANG, Hiroshi Nakashima, Fabrication of Metal-Nitride/Si Contactswith Low Electron Barrier Height, 224th ECS Meeting, 2013.10, [URL].
35. Hiroshi Nakashima, Yamamoto Keisuke, DONG WANG, Development of Metal Source/Drain Ge-CMOS Using TiN/Ge and HfGe/Ge contacts, 224th ECS Meeting, 2013.10, [URL].
36. Yamamoto Keisuke, Takahiro Sada, DONG WANG, Hiroshi Nakashima, Metal Source/Drain Ge p-MOSFET with HfGe/Ge Contact, 8th International Conference on Silicon Epitaxy and Heterostructures(ICSI-8) 2013, 2013.06.
37. Hatayama Kota, Yamamoto Keisuke, DONG WANG, Hiroshi Nakashima, Low temperature fabrication of Ohmic contact for p-type 4H-SiC using Al/Ti/Sn, 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI) 2013, 2013.06.
38. Yamamoto Keisuke, Asakawa Kojiro, DONG WANG, Hiroshi Nakashima, Fabrication of TiN/Si Contact with Low Electron Barrier Height and Its Application to Back-Gate MOSFET, 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI) 2013, 2013.06.
39. DONG WANG, Nagatomi Yuta, Kojima Shuta, Kamezawa Sho, Yamamoto Keisuke, Hiroshi Nakashima, An accurate characterization of metal-insulator-semiconductor interface-state by deep-level transient spectroscopy and its application on Y2O3/Ge gate stacks with ultrathin GeOx interlayer, 8th International Conference on Silicon Epitaxy and Heterostructures(ICSI-8) 2013, 2013.06.
40. Nakashima Hiroshi, Keisuke Yamamoto, WANG DONG, Contact Formations for Schottky Source/Drain Ge-CMOS, 6th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", 2013.02.