Kyushu University Academic Staff Educational and Research Activities Database
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Yamamoto Keisuke Last modified date:2018.06.14



Graduate School


E-Mail
Homepage
http://www.gic.kyushu-u.ac.jp/nakasima/index_e.htm
Global Innovation Center, Advanced Project Division: Functional Devices. Nakashima Lab. .
http://www.tj.kyushu-u.ac.jp/leading/en/index.html
Advanced Graduate Program in Global Strategy for Green Asia .
Academic Degree
Ph. D. (Engineering)
Field of Specialization
semiconductor engineering
Research
Research Interests
  • Fundamental research for SiC power devices
    keyword : 4H-SiC, 3C-SiC, gate stack, Ohmic contact
    2011.10.
  • Fundamental research for Ge-CMOS devices
    keyword : Ge channel, Ge-on-Insulator, high-k/Ge, metal gate, metal/Ge contact, metal S/D
    2010.04.
Academic Activities
Papers
1. Keisuke Yamamoto, Hayato Okamoto, Dong Wang, Hiroshi Nakashima, Fabrication of asymmetric Ge Schottky tunneling source n-channel field-effect transistor and its characterization of tunneling conduction, Materials Science in Semiconductor Processing, 10.1016/j.mssp.2016.09.024, 70, 1, 283-287, 2016.10, [URL].
2. Keisuke Yamamoto, Ryutaro Noguchi, Mitsuhara Masatoshi, Minoru Nishida, Toru Hara, Dong Wang, Hiroshi Nakashima, Electrical and structural properties of group-4 transition-metal nitride (TiN, ZrN, and HfN) contacts on Ge, Journal of Applied Physics, 10.1063/1.4930573, 118, 11, 115701-1-115701-12, 2015.09, [URL].
3. Keisuke Yamamoto, Mitsuhara Masatoshi, Keisuke Hiidome, Ryutaro Noguchi, Minoru Nishida, DONG WANG, Hiroshi Nakashima, Role of an interlayer at a TiN/Ge contact to alleviate the intrinsic Fermi-level pinning position toward the conduction band edge
, Applied Physics Letters, 10.1063/1.4870510, 104, 14, 132109-1-132109-5, 2014.04, [URL].
4. Yamamoto Keisuke, DONG WANG, Hiroshi Nakashima, Fabrication of Metal-Nitride/Si Contacts with Low Electron Barrier Height, ECS Transactions, 10.1149/05809.0053ecst, 58, 9, 53, 2013.10, [URL].
5. Yamamoto Keisuke, Takahiro Sada, DONG WANG, Hiroshi Nakashima, Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO2/GeO2 gate stack, Applied Physics Letters, 10.1063/1.4821546, 103, 12, 122106, 2013.09, [URL].
6. K. Yamamoto, K. Harada, H. Yang, D. Wang, H. Nakashima, Fabrication of TiN/Ge Contact with Extremely Low Electron Barrier Height, Japanese Journal of Applied Physics, 10.1143/JJAP.51.070208, 51, 7, 070208, 2012.07, [URL].
7. K. Yamamoto, T. Yamanaka, K. Harada, T. Sada, K. Sakamoto, S. Kojima, H. Yang, D. Wang, H. Nakashima, Schottky Source/Drain Ge Metal-Oxide-Semiconductor Field-Effect Transistors with Directly Contacted TiN/Ge and HfGe/Ge Structures, Applied Physics Express, 10.1143/APEX.5.051301, 5, 5, 051301, 2012.05, [URL].
8. K. Yamamoto, T. Yamanaka, R. Ueno, K. Hirayama, H. Yang, D. Wang, H. Nakashima, Source/drain junction fabrication for Ge metal-oxide-semiconductor field-effect transistors, Thin Solid Films, 10.1016/j.tsf.2011.10.047, 520, 8, 3382, 2012.02, [URL].
9. K. Yamamoto, R. Ueno, T. Yamanaka, K. Hirayama, H. Yang, D. Wang, H. Nakashima, High-Performance Ge Metal-Oxide-Semiconductor Field-Effect Transistors with a Gate Stack Fabricated by Ultrathin SiO2/GeO2 Bilayer Passivation, Applied Physics Express, 10.1143/APEX.4.051301, 4, 5, 051301, 2011.04, [URL].
Presentations
1. Keisuke Yamamoto, Hayato Okamoto, DONG WANG, Hiroshi Nakashima, Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer, 10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", 2017.02.
2. Hayato Okamoto, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima, Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer, 2016 International Conference on Solid State Device and Materials (SSDM 2016), 2016.09.
3. Keisuke Yamamoto, Hayato Okamoto, DONG WANG, Hiroshi Nakashima, Characterization of Ge Tunnel FET with Metal/Ge Junction, 7th International Symposium on Control of Semiconductor Interfaces / International SiGe Technology and Device Meeting, 2016.06, [URL].
4. Keisuke Yamamoto, Ryutaro Noguchi, Masatoshi Mitsuhara, Minoru Nishida, Toru Hara, Dong Wang, Hiroshi Nakashima, Barrier Height Modulation for Metal/Ge Contacts with Nitrogen-Contained Amorphous Interlayers, 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9), 2015.05, [URL].
5. Yamamoto Keisuke, DONG WANG, Hiroshi Nakashima, Fermi level pinning alleviation at the TiN, ZrN, and HfN/Ge interfaces, 7th International Silicon-Germanium Technology and Device Meeting (ISTDM 2014), 2014.06, [URL].
6. Keisuke Yamamoto, WANG DONG, Nakashima Hiroshi, Noguchi Ryutaro, Nishida Minoru, Mitsuhara Masatoshi, Hara Toru, Electrical Properties of Metal/Ge contacts with Nitrogen-Contained Amorphous Interlayers, 8th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", 2014.01.
7. Keisuke Yamamoto, WANG DONG, Nakashima Hiroshi, Fabrication of Metal-Nitride/Ge Contacts with Extremely Low Electron Barrier Height and Its Clarification of the Physical Origin, 7th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", 2014.01.
8. Yamamoto Keisuke, DONG WANG, Hiroshi Nakashima, Fabrication of Metal-Nitride/Si Contactswith Low Electron Barrier Height, 224th ECS Meeting, 2013.10, [URL].
9. Yamamoto Keisuke, Takahiro Sada, DONG WANG, Hiroshi Nakashima, Metal Source/Drain Ge p-MOSFET with HfGe/Ge Contact, 8th International Conference on Silicon Epitaxy and Heterostructures(ICSI-8) 2013, 2013.06.
10. Yamamoto Keisuke, Asakawa Kojiro, DONG WANG, Hiroshi Nakashima, Fabrication of TiN/Si Contact with Low Electron Barrier Height and Its Application to Back-Gate MOSFET, 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI) 2013, 2013.06.
Membership in Academic Society
  • The Japan Society of Applied Physics