Kyushu University Academic Staff Educational and Research Activities Database
Researcher information (To researchers) Need Help? How to update
Yamamoto Keisuke Last modified date:2018.09.18



Graduate School


E-Mail
Homepage
http://www.gic.kyushu-u.ac.jp/nakasima/index_e.htm
Global Innovation Center, Advanced Project Division: Functional Devices. Nakashima Lab. .
http://www.tj.kyushu-u.ac.jp/leading/en/index.html
Advanced Graduate Program in Global Strategy for Green Asia .
Academic Degree
Ph. D. (Engineering)
Field of Specialization
semiconductor engineering
Research
Research Interests
  • Fundamental research for SiC power devices
    keyword : 4H-SiC, 3C-SiC, gate stack, Ohmic contact
    2011.10.
  • Fundamental research for Ge-CMOS devices
    keyword : Ge channel, Ge-on-Insulator, high-k/Ge, metal gate, metal/Ge contact, metal S/D
    2010.04.
Academic Activities
Papers
1. Keisuke Yamamoto, Hayato Okamoto, Dong Wang, Hiroshi Nakashima, Fabrication of asymmetric Ge Schottky tunneling source n-channel field-effect transistor and its characterization of tunneling conduction, Materials Science in Semiconductor Processing, 10.1016/j.mssp.2016.09.024, 70, 1, 283-287, 2016.10, [URL].
2. Keisuke Yamamoto, Ryutaro Noguchi, Mitsuhara Masatoshi, Minoru Nishida, Toru Hara, Dong Wang, Hiroshi Nakashima, Electrical and structural properties of group-4 transition-metal nitride (TiN, ZrN, and HfN) contacts on Ge, Journal of Applied Physics, 10.1063/1.4930573, 118, 11, 115701-1-115701-12, 2015.09, [URL].
3. Keisuke Yamamoto, Mitsuhara Masatoshi, Keisuke Hiidome, Ryutaro Noguchi, Minoru Nishida, DONG WANG, Hiroshi Nakashima, Role of an interlayer at a TiN/Ge contact to alleviate the intrinsic Fermi-level pinning position toward the conduction band edge
, Applied Physics Letters, 10.1063/1.4870510, 104, 14, 132109-1-132109-5, 2014.04, [URL].
4. Yamamoto Keisuke, DONG WANG, Hiroshi Nakashima, Fabrication of Metal-Nitride/Si Contacts with Low Electron Barrier Height, ECS Transactions, 10.1149/05809.0053ecst, 58, 9, 53, 2013.10, [URL].
5. Yamamoto Keisuke, Takahiro Sada, DONG WANG, Hiroshi Nakashima, Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO2/GeO2 gate stack, Applied Physics Letters, 10.1063/1.4821546, 103, 12, 122106, 2013.09, [URL].
6. K. Yamamoto, K. Harada, H. Yang, D. Wang, H. Nakashima, Fabrication of TiN/Ge Contact with Extremely Low Electron Barrier Height, Japanese Journal of Applied Physics, 10.1143/JJAP.51.070208, 51, 7, 070208, 2012.07, [URL].
7. K. Yamamoto, T. Yamanaka, K. Harada, T. Sada, K. Sakamoto, S. Kojima, H. Yang, D. Wang, H. Nakashima, Schottky Source/Drain Ge Metal-Oxide-Semiconductor Field-Effect Transistors with Directly Contacted TiN/Ge and HfGe/Ge Structures, Applied Physics Express, 10.1143/APEX.5.051301, 5, 5, 051301, 2012.05, [URL].
8. K. Yamamoto, T. Yamanaka, R. Ueno, K. Hirayama, H. Yang, D. Wang, H. Nakashima, Source/drain junction fabrication for Ge metal-oxide-semiconductor field-effect transistors, Thin Solid Films, 10.1016/j.tsf.2011.10.047, 520, 8, 3382, 2012.02, [URL].
9. K. Yamamoto, R. Ueno, T. Yamanaka, K. Hirayama, H. Yang, D. Wang, H. Nakashima, High-Performance Ge Metal-Oxide-Semiconductor Field-Effect Transistors with a Gate Stack Fabricated by Ultrathin SiO2/GeO2 Bilayer Passivation, Applied Physics Express, 10.1143/APEX.4.051301, 4, 5, 051301, 2011.04, [URL].
Presentations
1. K. Yamamoto, D. Wang, H. Nakashima, S. Hishiki, K. Kawamura, Impact of Al2O3 interlayer for metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC for electronic device application, 2018 International Conference on Solid State Device and Materials (SSDM 2018), 2018.09.
2. K. Yamamoto, K. Nakae, D. Wang, H. Nakashima, Z. Xue, M. Zhang, Z. Di, Ambipolar operation of asymmetric Ge Schottky tunneling source field-effect transistor fabricated on Ge-on-Insulator, 2018 International Conference on Solid State Device and Materials (SSDM 2018), 2018.09.
3. Keisuke Yamamoto, Hayato Okamoto, DONG WANG, Hiroshi Nakashima, Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer, 10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", 2017.02.
4. Hayato Okamoto, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima, Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer, 2016 International Conference on Solid State Device and Materials (SSDM 2016), 2016.09.
5. Keisuke Yamamoto, Hayato Okamoto, DONG WANG, Hiroshi Nakashima, Characterization of Ge Tunnel FET with Metal/Ge Junction, 7th International Symposium on Control of Semiconductor Interfaces / International SiGe Technology and Device Meeting, 2016.06, [URL].
6. Keisuke Yamamoto, Ryutaro Noguchi, Masatoshi Mitsuhara, Minoru Nishida, Toru Hara, Dong Wang, Hiroshi Nakashima, Barrier Height Modulation for Metal/Ge Contacts with Nitrogen-Contained Amorphous Interlayers, 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9), 2015.05, [URL].
7. Yamamoto Keisuke, DONG WANG, Hiroshi Nakashima, Fermi level pinning alleviation at the TiN, ZrN, and HfN/Ge interfaces, 7th International Silicon-Germanium Technology and Device Meeting (ISTDM 2014), 2014.06, [URL].
8. Keisuke Yamamoto, WANG DONG, Nakashima Hiroshi, Noguchi Ryutaro, Nishida Minoru, Mitsuhara Masatoshi, Hara Toru, Electrical Properties of Metal/Ge contacts with Nitrogen-Contained Amorphous Interlayers, 8th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", 2014.01.
9. Keisuke Yamamoto, WANG DONG, Nakashima Hiroshi, Fabrication of Metal-Nitride/Ge Contacts with Extremely Low Electron Barrier Height and Its Clarification of the Physical Origin, 7th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", 2014.01.
10. Yamamoto Keisuke, DONG WANG, Hiroshi Nakashima, Fabrication of Metal-Nitride/Si Contactswith Low Electron Barrier Height, 224th ECS Meeting, 2013.10, [URL].
11. Yamamoto Keisuke, Takahiro Sada, DONG WANG, Hiroshi Nakashima, Metal Source/Drain Ge p-MOSFET with HfGe/Ge Contact, 8th International Conference on Silicon Epitaxy and Heterostructures(ICSI-8) 2013, 2013.06.
12. Yamamoto Keisuke, Asakawa Kojiro, DONG WANG, Hiroshi Nakashima, Fabrication of TiN/Si Contact with Low Electron Barrier Height and Its Application to Back-Gate MOSFET, 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI) 2013, 2013.06.
Membership in Academic Society
  • The Japan Society of Applied Physics