Kyushu University Academic Staff Educational and Research Activities Database
List of Papers
Yoshiji Miyamura Last modified date:2019.04.10

Post-doctoral Fellow / Division of Renewable Energy Dynamics / Research Institute for Applied Mechanics


Papers
1. SEKIGUCHI, T; KUSANAGI, S; MIYAMURA, Y; SUMINO, K , TEMPERATURE-DEPENDENT ELECTRON-BEAM INDUCED CURRENT STUDY OF DEFECTS IN SILICON, ACTA PHYSICA POLONICA A, 83, 1, 71-79, 1993.01.
2. JABLONSKI, J; MIYAMURA, Y; IMAI, M; TSUYA, H, GETTERING OF CU AND NI IMPURITIES IN SIMOX WAFERS, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 142, 6, 2059-2066, 1995.06.
3. Nakashima, S; Katayama, T; Miyamura, Y; Matsuzaki, A; Kataoka, M; Ebi, D; Imai, M; Izumi, K; Ohwada, N, Investigations on high-temperature thermal oxidation process at top and bottom interfaces of top silicon of SIMOX wafers, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 143, 1, 244-251, 1996.01.
4. Jablonski, J; Saito, M; Miyamura, Y; Imai, M, Effect of Fe impurities on the generation of process-induced microdefects in Czochralski silicon crystals, 1997 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS, 35, 2A, 520-525, 1996.02.
5. Saito, M; Jablonski, J; Katayama, T; Miyamura, Y; Ikegaya, K; Imai, M, Oxygen concentration in the top silicon layer of silicon-on-insulator materials formed by low-dose implantation of oxygen, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 35, 3B, L359-L361, 1996.03.
6. Imai, M; Miyamura, Y; Murata, D; Ogi, A, Characterization of SiGe layer on insulator by in-plane diffraction method, Solid State Phenomena, 108-109, 451-456, 2005.12.
7. Numata, T; Irisawa, T; Tezuka, T; Koga, J; Hirashita, N; Usuda, K; Toyoda, E; Miyamura, Y; Tanabe, A; Sugiyama, N; Takagi, S, Performance enhancement of partially and fully depleted strained-SOI MOSFETs, IEEE TRANSACTIONS ON ELECTRON DEVICES, 10.1109/TED.2006.871871, 53, 5, 1030-1038, 2006.05.
8. Tezuka, Tsutomu; Moriyama, Yoshihiko; Nakaharai, Shu; Sugiyama, Naoharu; Hirashita, Norio; Toyoda, Eiji; Miyamura, Yoshiji; Takagi, Shin-ichi, Lattice relaxation and dislocation generation/annihilation in SiGe-on-insulator layers during Ge condensation process, IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 10.1016/j.tsf.2005.07.319, 508, 1-2, 251-255, 2006.06.
9. Imai, Masato; Miyamura, Yoshiji; Murata, Daisuke; Kanda, Takahiro, Analytical Model for Epitaxial Growth of SiGe from SiH4 and GeH4 in Reduced-Pressure Chemical Vapor Deposition, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.1143/JJAP.47.8733, 47, 12, 8733-8738, 2008.12.
10. Tachibana, Tomihisa; Sameshima, Takashi; Kojima, Takuto; Arafune, Koji; Kakimoto, Koichi; Miyamura, Yoshiji; Harada, Hirofumi; Sekiguchi, Takashi; Ohshita, Yoshio; Ogura, Atsushi, Impact of Light-Element Impurities on Crystalline Defect Generation in Silicon Wafer, JOURNAL OF APPLIED PHYSICS, 10.1143/JJAP.51.02BP08, 51, 2, 2012.02.
11. Tachibana, Tomihisa; Sameshima, Takashi; Kojima, Takuto; Arafune, Koji; Kakimoto, Koichi; Miyamura, Yoshiji; Harada, Hirofumi; Sekiguchi, Takashi; Ohshita, Yoshio; Ogura, Atsushi, Evaluation of defects generation in crystalline silicon ingot grown by cast technique with seed crystal for solar cells, JOURNAL OF APPLIED PHYSICS, 10.1063/1.3700250, 111, 7, 074505, 2012.04.
12. Tachibana, T.; Sameshima, T.; Kojima, T.; Arafune, K.; Kakimoto, K.; Miyamura, Y.; Harada, H.; Sekiguchi, T.; Ohshita, Y.; Ogura, A., Evaluation of Silicon Substrates Fabricated by Seeding Cast Technique, Mater Sci Forum, 10.4028/www.scientific.net/MSF.725.133, 725, 133-136, 2012.07.
13. K. Jiptner, H. Harada, Y. Miyamura, M. Fukuzawa, T. Sekiguchi, Effect of Si3N4 Coating on Strain and Fracture of Si Ingots, Mater Sci Forum, 10.4028/www.scientific.net/MSF.725.247, 725, 247-250, 2012.07.
14. Y. Miyamura, H. Harada, S. Ito, J. Chen, T. Sekiguchi, Structural Study of Small Angle Grain Boundaries in Multicrystalline Si, Mater Sci Forum, 10.4028/www.scientific.net/MSF.725.157, 725, 157-160, 2012.07.
15. Gao, B.; Nakano, S.; Harada, H.; Miyamura, Y.; Sekiguchi, T.; Kakimoto, K., Reduction of polycrystalline grains region near the crucible wall during seeded growth of monocrystalline silicon in a unidirectional solidification furnace, JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2011.11.084, 352, 1, 47-52, 2012.08.
16. Jiptner, Karolin; Fukuzawa, Masayuki; Miyamura, Yoshiji; Harada, Hirofumi; Kakimoto, Koichi; Sekiguchi, Takashi, Evaluation of residual strain in directional solidified mono-Si ingots, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 1, 10.1002/pssc.201200884, 10, 1, 141-145, 2012.11.
17. Gao, Bing; Nakano, Satoshi; Harada, Hirofumi; Miyamura, Yoshiji; Sekiguchi, Takashi; Kakimoto, Koichi, Anisotropic Thermal Stress Simulation with Complex Crystal-Melt Interface Evolution for Seeded Growth of Monocrystalline Silicon, CRYSTAL GROWTH & DESIGN, 10.1021/cg301225w, 12, 11, 5708-5714, 2012.11.
18. Gao, Bing; Nakano, Satoshi; Harada, Hirofumi; Miyamura, Yoshiji; Sekiguchi, Takashi; Kakimoto, Koichi, Dislocation Analysis of a New Method for Growing Large-Size Crystals of Monocrystalline Silicon Using a Seed Casting Technique, CRYSTAL GROWTH & DESIGN, 10.1021/cg301274d, 12, 12, 6144-6150, 2012.12.
19. K. Jiptner, M. Fukuzawa, Y. Miyamura, H. Harada, T. Sekiguchi, Effect of crystallinity on residual strain distribution in cast-grown Si, Jpn. J. Appl. Phys., 10.7567/JJAP.52.065501, 52, 065501, 2013.05.
20. Gao, B.; Nakano, S.; Harada, H.; Miyamura, Y.; Kakimoto, K., Effect of Cooling Rate on the Activation of Slip Systems in Seed Cast-Grown Monocrystalline Silicon in the [001] and [111] Directions, CRYSTAL GROWTH & DESIGN, 10.1021/cg400428z, 13, 6, 2661-2669, 2013.06.
21. Inoue, Makoto; Nakano, Satoshi; Harada, Hirofumi; Miyamura, Yoshiji; Gao, Bing; Kangawa, Yoshihiro; Kakimoto, Koichi, Numerical Analysis of the Dislocation Density in Multicrystalline Silicon for Solar Cells by the Vertical Bridgman Process, INTERNATIONAL JOURNAL OF PHOTOENERGY, 10.1155/2013/706923, 2013.06.
22. Li, Jianyong; Prakash, Ronit Roneel; Jiptner, Karolin; Chen, Jun; Miyamura, Yoshiji; Harada, Hirofumi; Kakimoto, Koichi; Ogura, Atsushi; Sekiguchi, Takashi, Butterfly-shaped distribution of SiNx precipitates in multi-crystalline Si for solar cells, JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2013.03.051, 377, 37-42, 2013.08.
23. Miyamura, Y.; Harada, H.; Jiptner, K.; Chen, J.; Prakash, R. R.; Li, J. Y.; Sekiguchi, T.; Kojima, T.; Ohshita, Y.; Ogura, A.; Fukuzawa, M.; Nakano, S.; Gao, B.; Kakimoto, K., 10 cm diameter mono cast Si growth and its characterization, Solid State Phenomena, 10.4028/www.scientific.net/SSP.205-206.89, 205-206, 89-93, 2013.10.
24. K. Jiptner, M. Fukuzawa, Y. Miyamura, H. Harada, K. Kakimoto and T. Sekiguchi, Characterization of residual strain in Si ingots grown by the seed-cast method, Solid State Phenomena, 10.4028/www.scientific.net/SSP.205-206.94, 205-206, 94-99, 2013.10.
25. J. Chen, R. R. Prakash, J. Y. Li, K. Jiptner, Y. Miyamura, H. Harada, A. Ogura and T. Sekiguchi, Analysis of inhomogeneous dislocation distribution in multicrystalline Si, Solid State Phenomena, 10.4028/www.scientific.net/SSP.205-206.77, 205-206, 77-82, 2013.10.
26. Y. Miyamura, T. Sekiguchi, J. Chen, J.Y. Li, K. Watanabe, K. Kumagai, A. Ogura, Focused Ion Beam Imaging of Defects in Multicrystalline Si for Photovoltaic Application, ACTA PHYSICA POLONICA A, 10.12693/APhysPolA.125.991, 125, 991, 2014.04.
27. 26. Y. Miyamura, J. Chen, R.R. Prakash, K. Jiptner, H. Harada, T. Sekiguchi, Dislocation Generation and Propagation across the Seed in Seed Cast-Si Ingots, ACTA PHYSICA POLONICA A, 10.12693/APhysPolA.125.1024, 125, 1024, 2014.04.
28. Miyamura, Y.; Harada, H.; Jiptner, K.; Chen, J.; Prakash, R. R.; Nakano, S.; Gao, B.; Kakimoto, K.; Sekiguchi, T., Crystal growth of 50 cm square mono-like Si by directional solidification and its characterization, JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2014.03.016, 401, 133-136, 2014.09.
29. R. R. Prakash, T. Sekiguchi, K. Jiptner, Y. Miyamura, J. Chen, H. Harada, K. Kakimoto, Grain growth of cast-multicrystalline silicon grown from small randomly oriented seed crystal, JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2014.01.067, 401, 717-719, 2014.09.
30. Jiptner, Karolin; Gao, Bing; Harada, Hirofumi; Miyamura, Yoshiji; Fukuzawa, Masayuki; Kakimoto, Koichi; Sekiguchi, Takashi, Thermal stress induced dislocation distribution in directional solidification of Si for PV application, JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2014.09.017, 408, 19-24, 2014.12.
31. Gao, B.; Jiptner, K.; Nakano, S.; Harada, H.; Miyamura, Y.; Sekiguchi, T.; Kakimoto, K., Applicability of the three-dimensional Alexander-Haasen model for the analysis of dislocation distributions in single-crystal silicon, JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2014.11.011, 411, 49-55, 2015.02.
32. R. R. Prakash, K. Jiptner, J. Chen, Y. Miyamura, H. Harada and T. Sekiguchi, Grain boundary interactions in multicrystalline silicon grown from small randomly oriented seeds, Applied Physics Express, 10.7567/APEX.8.035502, 8, 3, 035502, 2015.02.
33. R. R. Prakash, K. Jiptner, J. Chen, Y. Miyamura, H. Harada, T. Sekiguchi, Control of extended defects in cast multicrystalline silicon using polycrystalline template, Phys. Status Solidi, 10.1002/pssc.201400299, C12, 8, 1099-1102, 2015.04.
34. Miyamura, Yoshiji; Harada, Hirofumi; Jiptner, Karolin; Nakano, Satoshi; Gao, Bing; Kakimoto, Koichi; Nakamura, Kyotaro; Ohshita, Yoshio; Ogura, Atsushi; Sugawara, Shin; Sekiguchi, Takashi, Advantage in solar cell efficiency of high-quality seed cast mono Si ingot, APPLIED PHYSICS EXPRESS, 10.7567/APEX.8.062301, 8, 6, 0623021, 2015.06.
35. T. Sekiguchi, K. Jiptner, Ronit R. Prakash, J. Chen, Y. Miyamura, H. Harada, S. Nakano, B. Gao, and K. Kakimoto, Control of extended defects in cast and seed cast Si ingots for photovoltaic application, Phys. Status Solidi, 10.1002/pssc.201400230, C12, 8, 1094-1198, 2015.06.
36. Gao, Bing; Nakano, Satoshi; Harada, Hirofumi; Miyamura, Yoshiji; Sekiguchi, Takashi; Kakimoto, Koichi, Single-Seed Casting Large-Size Monocrystalline Silicon for High-Effi ciency and Low-Cost Solar Cells, ENGINEERING, 10.15302/J-ENG-2015032, 1, 3, 378-383, 2015.09.
37. Takashi Sekiguchi, Ronit R. Prakash, Karolin Jiptner, Xian Jia Luo, Jun Chen, Yoshiji Miyamura, Hirofumi Harada, Statistical Consideration of Grain Growth Mechanism of Multicrystalline Si by One-Directional Solidification Technique, Solid State Phenomena, 10.4028/www.scientific.net/SSP.242.35, 242, 35-40, 2015.10.
38. T. Sekiguchi, Y. Miyamura, H. Harada, K. Jiptner, J. Chen, R. R. Prakash, S. Nakano, B. Gao, K. Kakimoto, 50 cm Size Seed Cast Si Ingot Growth and its Characterization, Solid State Phenomena, 10.4028/www.scientific.net/SSP.242.30, 242, 30-34, 2015.10.
39. Karolin Jiptner, Yoshiji Miyamura, Bing Gao, Hirofumi Harada, Koichi Kakimoto, Takashi Sekiguchi , Orientation Dependency of Dislocation Generation in Si Growth Process, Solid State Phenomena, 10.4028/www.scientific.net/SSP.242.15, 242, 15-20, 2015.10.
40. Jiptner, Karolin; Miyamura, Yoshiji; Harada, Hirofumi; Gao, Bing; Kakimoto, Koichi; Sekiguchi, Takashi, Dislocation behavior in seed-cast grown Si ingots based on crystallographic orientation, PROGRESS IN PHOTOVOLTAICS, 10.1002/pip.2708, 24, 12, 1513-1522, 2016.12.
41. Gao, B.; Nakano, S.; Harada, H.; Miyamura, Y.; Kakimoto, K., Three-dimensional analysis of dislocation multiplication during thermal process of grown silicon with different orientations, JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2016.12.059, 474, 121-129, 2017.09.
42. Nakano, S.; Gao, B.; Jiptner, K.; Harada, H.; Miyamura, Y.; Sekiguchi, T.; Fukuzawa, M.; Kakimoto, K., Numerical analysis of the relation between dislocation density and residual strain in silicon ingots used in solar cells, JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2016.12.007, 474, 130-134, 2017.09.
43. Han, Xue-Feng; Liu, Xin; Nakano, Satoshi; Harada, Hirofumi; Miyamura, Yoshiji; Kakimoto, Koichi, 3D numerical simulation of free surface shape during the crystal growth of floating zone (FZ) silicon, JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2017.12.012, 483, 269-274, 2018.02.
44. Miyamura, Y.; Harada, H.; Nakano, S.; Nishizawa, S.; Kakimoto, K., Relationship between carbon concentration and carrier lifetime in CZ-Si crystals, JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2018.01.020, 486, 56-59, 2018.03.
45. Fukushima, Wataru; Harada, Hirofumi; Miyamura, Yoshiji; Imai, Masato; Nakano, Satoshi; Kakimoto, Koichi, Effect of oxygen on dislocation multiplication in silicon crystals, JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2017.12.030, 486, 45-49, 2018.03.
46. Miyamura, Y.; Harada, H.; Nakano, S.; Nishizawa, S.; Kakimoto, K., Do thermal donors reduce the lifetimes of Czochralski-grown silicon crystals?, JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2018.02.034, 489, 1-4, 2018.05.
47. Han, Xue-Feng; Liu, Xin; Nakano, Satoshi; Harada, Hirofumi; Miyamura, Yoshiji; Kakimoto, Koichi, 3D Global Heat Transfer Model on Floating Zone for Silicon Single Crystal Growth, CRYSTAL RESEARCH AND TECHNOLOGY, 10.1002/crat.201700246, 53, 5, 2018.05.
48. Ide, Tomoro; Harada, Hirofumi; Miyamura, Yoshiji; Imai, Masato; Nakano, Satoshi; Kakimoto, Koichi, Relationship between Dislocation Density and Oxygen Concentration in Silicon Crystals during Directional Solidification, CRYSTALS, 10.3390/cryst8060244, 8, 6, 2018.06.
49. Ishikawa, Yoichiro; Tajima, Michio; Kiuchi, Hirotatsu; Ogura, Atsushi; Miyamura, Yoshiji; Harada, Hirofumi; Kakimoto, Koichi, Determination of C concentration in P-doped n-type Czochralski-grown Si crystals by liquid N temperature photoluminescence after electron irradiation, JAPANESE JOURNAL OF APPLIED PHYSICS, 10.7567/JJAP.57.08RB06, 57, 8, 2018.08.
50. Xin Liu, Hirofumi Harada, Yoshiji Miyamura, Xue feng Han, Satoshi Nakano, Shinichi Nishizawa, Koichi Kakimoto, Numerical analyses and experimental validations on transport and control of carbon in Czochralski silicon crystal growth, Journal of Crystal Growth, 10.1016/j.jcrysgro.2018.07.020, 499, 8-12, 2018.10.
51. Miyamura, Y.; Harada, H.; Liu, X.; Nakano, S.; Nishizawa, S.; Kakimoto, K., In-situ measurement of CO gas concentration in a Czochralski furnace of silicon crystals, JOURNAL OF CRYSTAL GROWTH, 10.1016/j.jcrysgro.2018.11.017, 507, 154-156, 2019.02.