| 1. |
Wataru Saito, and Shin-ichi Nishizawa, Overvoltage Failure Process of Cascode GaN FETs, 14th International Conference on Nitride Semiconductors (ICNS), 2023.11. |
| 2. |
齋藤 渉, パワーエレクトロニクス応用動向から見たパワーデバイスの将来展望, 電気学会 電子デバイス/半導体電力変換研究会, 2023.10. |
| 3. |
T. Takamori, K. Wada, W. Saito, S. Nishizawa, Reliability investigation of repeated unclamped inductive switching in a diode-clamped SiC circuit breaker, 34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), 2023.10. |
| 4. |
T. Tsukamoto, S. Nishizawa, W. Saito, A simple sensor device for power cycle degradation sensing, 34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), 2023.10. |
| 5. |
T. Mamee, Z. Lou, K. Hata, M. Takamiya, S. Nishizawa, W. Saito, Enhancement of turn-off gate voltage waveform change by digital gate control for bond wire lift-off detection in IGBT module, 34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), 2023.10. |
| 6. |
Yuri Fujimoto, Shin-ichi Nishizawa, Wataru Saito, Turn-Off Switching Voltage Surge Analysis with Dependence on IGBT Cell Design, 2023 International Conference on Solid State Devices and Materials (SSDM), 2023.09. |
| 7. |
Hiroaki Kato, Bozhou Cai, Jiuyang Yuan, Yoshiji Miyamura, Shin-ichi Nishizawa, Wataru Saito, Wafer Warpage Modeling for Process Integration of Trench Field Plate Power MOSFETs, 2023 International Conference on Solid State Devices and Materials (SSDM), 2023.09. |
| 8. |
Bozhou Cai, Jiuyang Yuan, Yoshiji Miyamura, Wataru Saito, Shin-ichi Nishizawa, Study on Stress in Trench Structures during Silicon IGBTs Process – Oxidation, 2023 International Conference on Solid State Devices and Materials (SSDM), 2023.09. |
| 9. |
Xiang Zhou, Munetoshi Fukui, Kiyoshi Takeuchi, Takuya Saraya, Wataru Saito, Toshiro Hiramoto, Restoration of Degraded Reverse Bias Safety Operating Area (RBSOA) in 3300V Scaled IGBTs by Non-Proportional Scaling Method, 2023 International Conference on Solid State Devices and Materials (SSDM), 2023.09. |
| 10. |
Wataru Saito, Avalanche breakdown behavior and robustness of SiC and GaN transistors, IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia) 2023, 2023.08. |
| 11. |
Wataru Saito, Shin-Ichi Nishizawa, Failure Process of GaN-HEMTs by Repetitive Overvoltage Stress, The 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023.05. |
| 12. |
Taro Takamori; Keiji Wada; Wataru Saito; Shin-Ichi Nishizawa, Solid-State Circuit Breaker with Avalanche Robustness using Series-Connection of SiC Diodes, 2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia), 2023.05. |
| 13. |
Jiuyang Yuan, Yoshiji Miyamura, Satoshi Nakano, Wataru Saito, and Shin-ichi Nishizawa, The Study of Dislocation Propagation in Si Wafer during IGBT High Thermal Budget Process, 7th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2023, 2023.03. |
| 14. |
Toshiaki Inuma; Katsuhiro Hata; Toru Sai; Wataru Saito; Makoto Takamiya, Two Stop-and-Go Gate Driving to Reduce Switching Loss and Switching Noise in Automotive IGBT Modules, IEEE 7th Southern Power Electronics Conference (SPEC), 2022.12. |
| 15. |
Taro Takamori; Keiji Wada; Norman Boettcher; Tobias Erlbacher; Wataru Saito; Shin-Ichi Nishizawa, Adjustable Current Limit Feature with a Self-Sensing and Self-Triggering Monolithically Integrated SiC Circuit Breaker Device, 2022 IEEE Energy Conversion Congress and Exposition (ECCE), 2022.10. |
| 16. |
Norman Boettcher; Taro Takamori; Keiji Wada; Wataru Saito; Shin-ichi Nishizawa; Tobias Erlbacher, Short Circuit Performance and Current Limiting Mode of a Monolithically Integrated SiC Circuit Breaker for DC Applications up to 800 V, 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe), 2022.09. |
| 17. |
Zaiqi Lou, Wataru Saito, Shin-ichi Nishizawa, Application of A Parallel-Connected SiC MOSFETs to Solid-State Circuit Breakers Based on UIS Tests, 33rd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), 2022.09. |
| 18. |
Wataru Saito, Progress of Low-Voltage Si-Power MOSFETs, 2022 International Conference on Solid State Devices and Materials (SSDM), 2022.09. |
| 19. |
Wataru Saito, Zaiqi Lou and Shin-ichi Nishizawa, Cutoff Current Capability of SiC-MOSFETs with Parallel Connected Varistor under UIS Condition, IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA-Europe), 2022.09. |
| 20. |
Kohei Horii, Katsuhiro Hata, Ruizhi Wang, Wataru Saito, and Makoto Takamiya, Large Current Output Digital Gate Driver Using Half-Bridge Digital-to-Analog Converter IC and Two Power MOSFETs, 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2022.05. |
| 21. |
Norman Boettcher, Taro Takamori, Keiji Wada, Wataru Saito, Shin-ichi Nishizawa and Tobias Erlbacher, Fabrication Aspects and Switching Performance of a Self-Sensing 800 V SiC Circuit Breaker Device, 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2022.05. |
| 22. |
Wataru Saito and Shin-ichi Nishizawa, Switching Noise-Loss Trade-Off Improvement of SJ-IGBTs, 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2022.05. |
| 23. |
Joseph P. Kozak, Qihao Song, Jingcun Liu, Ruizhe Zhang, Qiang Li, Wataru Saito, Yuhao Zhang, Accelerating the Recovery of p-Gate GaN HEMTs after Overvoltage Stresses, International Reliability Physics Symposium 2022, 2022.03. |
| 24. |
Qihao Song, Joseph P. Kozak, Yunwei Ma, Jingcun Liu, Ruizhe Zhang, Roman Volkov, Daniel Sherman, Kurt Smith, Wataru Saito, Yuhao Zhang, GaN MIS-HEMTs in Repetitive Overvoltage Switching: Parametric Shift and Recovery, International Reliability Physics Symposium 2022, 2022.03. |
| 25. |
Taro Takamori, Keiji Wada, Wataru Saito, Shin-Ichi Nishizawa, Paralleled SiC MOSFETs DC Circuit Breaker with SiC MPS Diode As Avalanche Voltage Clamping, The Applied Power Electronics Conference (APEC) 2022, 2022.03. |
| 26. |
M. Sagara, K. Wada, S.-I. Nishizawa, W. Saito, Avalanche Current Balancing Using Parallel Connection of SiC-JFETs with Cascode Connection, 32nd EUROPEAN SYMPOSIUM ON RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS (ESREF), 2021.10. |
| 27. |
Z. Lou, K. Wada, W. Saito, S.-I. Nishizawa, Investigations on Acceptable Breakdown Voltage Variation of Parallel-Connected SiC MOSFETs Applied in Solid-State Circuit Breakers, 32nd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), 2021.10. |
| 28. |
Sankara Narayanan Ekkanath Madathil, Peng Luo, Wataru Saito, and Shin-ichi Nishizawa, Performance Comparison of Scaled IGBTs and CIGBTs, 2021 International Conference on Solid State Devices and Materials, 2021.09. |
| 29. |
Wataru Saito, Shin-ichi Nishizawa, Power Loss Reduction of Low-Voltage Power MOSFET by Combination of Assist Gate Structure and Gate Control Technology, 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021.06. |
| 30. |
T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, K. Satoh, T. Matsudai, K. Kakushima, T. Hoshii, K. Tsutsui, H. Iwai, A. Ogura, W. Saito, S. Nishizawa, I. Omura, H. Ohashi, and T. Hiramoto, 3.3 kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology, International Electron Devices Meeting (IEDM) 2020, 2020.12, 3.3kV級両面ゲートIGBTを表面ウェハ工程と裏面ウェハ工程を組み合わせて、試作した。裏面MOSゲートにより電子の排出とホール注入の制御を行うことで、ターオフ損失を60%以上低減できることを実証した。. |
| 31. |
Taro Takamori, Keiji Wada, Wataru Saito and Shin-ichi Nishizawa, Gate drive circuit for current balancing of parallel-connected SiC-JFETs under avalanche mode, 31st EUROPEAN SYMPOSIUM ON RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS (ESREF), 2020.10. |
| 32. |
Zaiqi Lou, Wataru Saito, Shin-ichi Nishizawa, Investigation of Acceptable Breakdown Voltage Variation for Parallel-Connected SiC-MOSFET during UIS Test, 2020 International Conference on Solid State Devices and Materials (SSDM), 2020.09. |
| 33. |
Taichi Ogawa, Wataru Saito, Shin-ichi Nishizawa, A Design Direction of Low-Voltage Field Plate Power MOSFETs for FOM Limit, 2020 International Conference on Solid State Devices and Materials (SSDM), 2020.09. |
| 34. |
Ryohei Sato; Koichi Kakimoto; Wataru Saito; Shin-ichi Nishizawa, Dislocation Propagation in Si 300 mm Wafer during High Thermal Budget Process and Its Optimization, 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020.09. |
| 35. |
Peng Luo; Sankara Narayanan Ekkanath Madathil; Shin-ichi Nishizawa; Wataru Saito, Dynamic Avalanche Free Super Junction-TCIGBT for High Power Density Operation, 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020.09. |
| 36. |
Wataru Saito; Shin-ichi Nishizawa, High Switching Controllability Trench Gate Design in Si-IGBTs, 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020.09. |
| 37. |
Peng Luo, Sankara Narayanan Ekkanath Madathil, Shin-ichi Nishizawa, Wataru Saito
, High dV/dt Controllability of 1.2kV Si-TCIGBT for High Flexibility Design with Ultra-low Loss Operation, 2020 IEEE Applied Power Electronics Conference and Exposition (APEC), 2020.03. |
| 38. |
Peng Luo, Sankara Narayanan Ekkanath Madathil, Shin-ichi Nishizawa, and Wataru Saito, Dynamic Avalanche Free Design in 1.2kV Si-IGBTs for Ultra High Current Density Operation, International Electron Devices Meeting (IEDM) 2019, 2019.12, 高効率な電力変換を実現するパワーデバイスとして多く用いられているIGBTにおいて、更なる低損失化と大電流密度化を実現する上で、ターンオフスイッチング動作時のダイナミックアバランシェ現象は大きな障害となっている。従来のIGBTにおいて、ダイナミックアバランシェを発生させている原因が電界集中とホール排出不足であることを明らかにすると共に、これらを解消させる構造として、Clustered IGBTが有効であることを理論と実験の両面から証明した。. |
| 39. |
Kaori Fuse, Keiko Kawamura, Wataru Saito and Tomoko Matsudai , Analysis of oscillatory phenomena in cathode designs for 1200 V diodes using an LCR circuit model in reverse recovery , International Conference on Solid State Devices and Materials (SSDM), 2019.09. |
| 40. |
Takeshi Mizoguchi, Yoko Sakiyama, Naoto Tsukamoto and Wataru Saito, High accurate IGBT/IEGT compact modeling for prediction of power efficiency and EMI noise, 31th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019.05. |
| 41. |
Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Masanori Tsukuda, Yohichiroh Numasawa, Katsumi Satoh, Tomoko Matsudai, Wataru Saito, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Shin-ichi Nishizawa, Ichiro Omura, Hiromichi Ohashi, and Toshiro Hiramoto, 3300V scaled IGBTs driven by 5V gate voltage, 31th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019.05. |
| 42. |
Wataru Saito, Breakthrough of drain current capability and on-resistance limits by gate-connected superjunction MOSFET, 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018.08. |
| 43. |
Hiroaki Yamashita, Syotaro Ono, Hisao Ichijo, Masataka Tsuji, Masaru Izumisawa and Wataru Saito, Low noise superjunction MOSFET with integrated snubber structure, 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018.05. |
| 44. |
Wataru Saito, Enhancement of accumulation-mode operation in gate-connected superjunction MOSFET, 14th International Seminar on Power Semiconductors (ISPS), 2018.05. |
| 45. |
Wataru Saito and Toshiyuki Naka, Relation between UIS withstanding capability and I-V characteristics in high-voltage GaN-HEMTs, 28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux (France), 2017.09. |
| 46. |
K. Kakushima, T. Hoshii, K. Tsutsui, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, H. Iwai, Demonstration of Reduction in Vce(sat) of IGBT based on a 3D Scaling Principle, International Conference on Solid State Devices and Materials (SSDM) 2017, 2017.09. |
| 47. |
Wataru Saito and Toshiyuki Naka, Influence of Gate Characteristics upon UIS Withstanding Capability in High Voltage GaN-HEMTs, 12th Topical Workshop on Heterostructure Microelectronics (TWHM-2017), 2017.08. |
| 48. |
Toshiyuki Naka and Wataru Saito, Relation between UIS withstanding capability and gate leakage currents for high voltage GaN-HEMTs, 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2017.05. |
| 49. |
Wataru Saito, Process design of superjunction MOSFETs for high drain current capability and low on-resistance, 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2017.05. |
| 50. |
K. Kakushima, T. Hoshii, K. Tsutsui, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, H. Iwai, Experimental Verification of a 3D Scaling Principle for Low Vce(sat) IGBT, 2016 International Electron Device Meeting (IEDM), 2016.12. |
| 51. |
W. Saito and T. Naka, UIS test of high-voltage GaN-HEMTs with p-type gate structure, 27th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), 2016.09. |
| 52. |
T. Naka and W. Saito, UIS withstanding capability and mechanism of high voltage GaN-HEMTs, 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016.06. |
| 53. |
T. Mizoguchi, T. Naka, Y. Tanimoto, Y. Okada, W. Saito, M. Miura-Mattausch and H. J. Mattausch, Analysis of GaN-HEMTs switching characteristics for power applications with compact model including parasitic contributions, 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016.06. |
| 54. |
K. Endo, S. Nagamine, W. Saito, T. Matsudai, T. Ogura, T. Setoya, K. Nakamae, Direct photo emission motion observation of current filaments in the IGBT under avalanche breakdown condition, 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016.06. |
| 55. |
W. Saito, T. Suwa, T. Uchihara, T. Naka, T. Kobayashi, Breakdown behaviour of high-voltage GaN-HEMTs, 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), 2015.10. |
| 56. |
L. Zhang, M. Koike, M. Ono, S. Itai, K. Matsuzawa, S. Ono, W. Saito, M. Yamaguchi, Y. Hayase, K. Hara, Comprehensive 2D-carrier profiling of low-doping region by high-sensitivity scanning spreading resistance microscopy (SSRM) for power device applications, 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), 2015.10. |
| 57. |
Takeshi Suwa, Wataru Saito, Takeshi Uchihara, Toshiyuki Naka and Taichi Kobayashi, Investigation of breakdown characteristics in high-voltage GaN-HEMTs, International Conference on Solid State Devices and Materials (SSDM) 2015, 2015.09. |
| 58. |
Takeshi Mizoguchi, Toshiyuki Naka, Yuta Tanimoto, Yasuhiro Okada, Wataru Saito, Mitiko Miura-Mattausch and Hans J?rgen Mattausch, Analysis of GaN-HEMT switching characteristics for high-power applications, International Conference on Solid State Devices and Materials (SSDM) 2015, 2015.09. |
| 59. |
Wataru Saito, Takeshi Suwa, Takeshi Uchihara, Toshiyuki Naka and Taichi Kobayashi, TCAD simulation of high voltage GaN-HEMTs, 11th Topical Workshop on Heterostructure Microelectronics (TWHM), 2015.08. |
| 60. |
Shunsuke Katoh, Eiji Shimada, Takayuki Yoshihira, Akihiro Oyama, Syotaro Ono, Hideyuki Ura, Gentaro Ookura, Wataru Saito, Yusuke Kawaguchi, Temperature dependence of single-event burnout for super junction MOSFET, 27th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2015.05. |
| 61. |
Wataru Saito, Theoretical limits of superjunction considering with charge imbalance margin, 27th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2015.05. |
| 62. |
Hiroaki Yamashita, Hideyuki Ura, Syotaro Ono, Masato Nashiki, Kenji Mii, Wataru Saito, Jun Onodera, Yoshitaka Hokomoto, Suppression of switching loss dependence on charge imbalance of superjunction MOSFET, 27th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2015.05. |
| 63. |
Akira Nakajima, Shin-ichi Nishizawa, Hiromichi Ohashi, Wataru Saito, Theoretical loss analysis of power converters with 1200 V class Si-IGBT and SiC-MOSFET, International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM) Europe 2015, 2015.05. |
| 64. |
M. Okamoto, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, and H. Iwai and W. Saito, Dependence of Ti/C ratio on ohmic contact with TiC electrode for AlGaN/GaN structure, The 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2014.11. |
| 65. |
Kazuo Tsutsui, Masayuki Kamiya, Yusuke Takei, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Yoshinori Kataoka and Hiroshi H. Iwai, Low-resistive contact formation on AlGaN/GaN HEMT structures by introducing uneven AlGaN layers, International Workshop on Nitride Semiconductors (IWN) 2014, 2014.08. |
| 66. |
Wataru Saito, Yasunobu Saito, Yorito Kakiuchi, Tomohiro Nitta, Hidetoshi Fujimoto, Akira Yoshioka and Tetsuya Ohno, Backside field plate effect on suppression of current collapse phenomena in high-voltage GaN-HEMTs, International Workshop on Nitride Semiconductors (IWN) 2014, 2014.08. |
| 67. |
Wataru Saito, Shotaro Ono and Hiroaki Yamashita, Influence of carrier lifetime control process in superjunction MOSFET characteristics, 26th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2014.06. |
| 68. |
M. Okamoto, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, H. Iwai and W. Saito, An Ohmic contact process for AlGaN/GaN structures using TiSi2 electrodes, The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2013.11. |
| 69. |
Wataru Saito, Power Device Trends for High- Power density operation of power electronics system, International Conference on Solid State Devices and Materials (SSDM) 2013, 2013.09. |
| 70. |
Wataru Saito, Requirements to GaN-HEMT from high-power density operation of power electronics system, 10th Topical Workshop on Heterostructure Microelectronics (TWHM), 2013.08. |
| 71. |
Wataru Saito, Comparison of theoretical limits between superjunction and field plate structures, 25th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2013.05. |
| 72. |
Wataru Saito, Yasunobu Saito, Hidetoshi Fujimoto, Akira Yoshioka, Tetsuya Ohno, Toshiyuki Naka and Toru Sugiyama, Switching controllability of high voltage GaN-HEMTs and the Cascode connection, 24th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2012.06. |
| 73. |
Syotaro Ono, Hiroshi Ohta, Hiroaki Yamashita, Masaru Izumisawa, Wataru Saito, Shingo Sato, Noboru Matsuda, Yoshihisa Ohishi, Masataka Tsuji, Jun Onodera and Georges Tchouangue, DTMOS-IV: RDS(ON) innovation by deep trench filling superjunction technology, International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM) Europe 2012, 2012.05. |
| 74. |
Syotaro Ono, Shoichiro Kurushima, Masataka Tsuji, Yasuto Sumi, Hiroshi Ohta, Wataru Saito, Jun Onodera, Tadashi Matsuda and Georges Tchouangue, “Improvement of gate controllability for new generation superjunction MOSFETs: DTMOS-III series, International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM) Europe 2011, 2011.05. |
| 75. |
Wataru Saito, Satoshi Aida, Shigeo Koduki and Masaru Izumisawa, Improvement of switching trade-off characteristics between noise and loss in high voltage MOSFETs, 23rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2011.05. |
| 76. |
Wataru Saito, Yasunobu Saito, Hidetoshi Fujimoto, Akira Yoshioka, Tetsuya Ohno and Toru Sugiyama, A turn-off switching test of high voltage GaN-HEMTs, 9th Topical Workshop on Heterostructure Microelectronics (TWHM), 2011.08. |
| 77. |
Wataru Saito, Reliability of GaN-HEMTs for high-voltage switching applications, 2011 International Reliability Physics Symposium (IRPS), 2011.04. |
| 78. |
Wataru Saito, Tomohiro Nitta, Yorito Kakiuchi, Yasunobu Saito,Takao Noda, Hidetoshi Fujimoto, Akira Yoshioka and Tetsuya Ohno, Influence of Electric Field upon Current Collapse Phenomena and Reliability in High Voltage GaN-HEMTs, 22nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2010.06. |
| 79. |
Syotaro Ono, Li Zhang, Hiroshi Ohta, Miho Watanabe, Wataru Saito, Shigo Sato, Hiroyuki Sugaya and Masakazu Yamaguchi, Development of 600V-class trench filling SJ-MOSFET with SSRM analysis technology, 21st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2009.05. |
| 80. |
Wataru Saito, Tomokazu Domon, Ichiro Omura, Tomohiro Nitta, Yorito Kakiuchi, Kunio Tsuda and Masakazu Yamaguchi, Demonstration of Resonant Inverter Circuit for Electrodeless Fluorescent Lamps Using High Voltage GaN-HEMT, 39th Power Electronics Specialists Conference (PESC), 2008.06. |
| 81. |
Hidetoshi Fujimoto, Wataru Saito, Akira Yoshioka, Tomohiro Nitta, Yorito Kakiuchi and Yasunobu Saito, Wafer quality target for current-collapse-free GaN-HEMTs in high voltage applications, Compound Semiconductor Manufacturing Technology (CS-MANTECH) 2008, 2008.06. |
| 82. |
Syotaro Ono, Wataru Saito, Masaru Izumisawa, Yasuto Sumi, Shoichiro Kurushima, Masataka Tsuji, Ken'ichi Tokano and Masakazu Yamaguchi, The optimal profile desing for SJ-MOSFET fabricated by double-ion-implantation and multi-epitaxial method, 20th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2008.05. |
| 83. |
Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Yasunobu Saito, Ichiro Omura and Masakazu Yamaguchi, Current Collapseless High-Voltage GaN-HEMT and its 50-W Boost Converter Operation, 2007 International Electron Device Meeting (IEDM), 2007.12. |
| 84. |
Ichiro Omura, Wataru Saito, Tomokazu Domon, Kunio Tsuda, Gallium Nitride power HEMT for high switching frequency power electronics, International Workshop on Physics of Semiconductor Devices (IWPSD) 2007, 2007.12. |
| 85. |
Wataru Saito, Ichiro Omura and Kunio Tsuda, High Voltage GaN-HEMTs for Power Electronics Applications and Those Current Collapse Phenomena under High Applied Voltage, Compound Semiconductor Manufacturing Technology (CS-MANTECH) 2007, 2007.06. |
| 86. |
Syotaro Ono, Wataru Saito, Masakatsu Takashita, Shoichiro Kurushima, Ken'ichi Tokano and Masakazu Yamaguchi, Design concept of n-buffer layer (n-Bottom Assist Layer) for 600V-class Semi-Super Junction MOSFET, 19th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2007.05. |
| 87. |
Ichiro Omura, Masanori. Tsukuda, Wataru Saito and Tomokazu Domon, High power density converter using SiC-SBD, 4th Power Conversion Conference (PCC), 2007.04. |
| 88. |
Wataru Saito, Ichiro Omura, Tomokazu Domon and Kunio Tsuda, High Voltage and High Switching Frequency Power-Supplies using a GaN-HEMT, 2006 Compound Semiconductor IC Symposium, 2006.11. |
| 89. |
Masahiko Kuraguchi, Yoshiharu Takada, Takashi Suzuki, Mayumi Hirose, Kunio Tsuda, Wataru Saito, Yasunobu Saito and Ichiro Omura, Normally-off GaN-MISFET with well-controlled threshold voltage, International Workshop on Nitride Semiconductors (IWN) 2006, 2006.10. |
| 90. |
Wataru Saito, Ichiro Omura, Satoshi Aida, Shigeo Koduki, Masaru Izumisawa, Hironori Yoshioka, Hideki Okumura, Masakazu Yamaguchi and Tsuneo Ogura, A 15.5mΩcm2-680V Superjunction MOSFET Reduced On-Resistance by Lateral Pitch Narrowing, 18th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2006.06. |
| 91. |
Masanori Tsukuda, Ichiro Omura, Wataru Saito and Tomokazu Domon, Demonstration of High Output Power Density (50W/cc) Converter using 600V SJ-MOSFET and SiC-SBD, International Conference on Integrated Power Electronics Systems (CIPS), 2006.06. |
| 92. |
Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Tomokazu Domon, Ichiro Omura and Masakazu Yamaguchi, 380V/1.9A GaN Power-HEMT: Current Collapse Phenomena under High Applied Voltage and Demonstration of 27.1MHz Class-E Amplifier, 2005 International Electron Device Meeting (IEDM), 2005.12. |
| 93. |
Wataru Saito, Ichiro Omura, Satoshi Aida, Shigeo Koduki, Masaru Izumisawa, Hironori Yoshioka and Tsuneo Ogura, Over 1000V Semi-Superjunction MOSFET with Ultra-Low On-Resistance blow the Si-Limit, 17th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2005.05. |
| 94. |
Masanori Tsukuda, Ichiro Omura, Tomokazu Domon, Wataru Saito and Tsuneo Ogura, Demonstration of High Output Power Density (30W/cc) Converter using 600V SiC-SBD and Low Impedance Gate Driver, 7th International Power Engineering Conference (IPEC), 2005.04. |
| 95. |
Ichiro Omura, Wataru Saito and Kunio Tsuda, High Voltage AlGaN/GaN Power HEMT for Power Electronics Applications, 206th Electro Chemical Society meeting (ECS), 2004.10. |
| 96. |
Masahiko Kuraguchi, Yoshiharu Takada, Wataru Saito, Ichiro Omura and Kunio Tsuda, High breakdown voltage AlGaN/GaN MIS-HFET with low leakage current, International Workshop on Nitride Semiconductors (IWN) 2004, 2004.07. |
| 97. |
Wataru Saito, Ichiro Omura, Satoshi Aida, Shigeo Koduki, Masaru Izumisawa, Hironori Yoshioka and Tsuneo Ogura, A 20mΩcm2 600V-class Superjunction MOSFET, 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2004.05. |
| 98. |
Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Kunio Tsuda, Ichiro Omura and Tsuneo Ogura, 600V AlGaN/GaN Power-HEMT: Design, Fabrication and Demonstration on High Voltage DC-DC Converter, 2003 International Electron Device Meeting (IEDM), 2003.12. |
| 99. |
Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Kunio Tsuda, Ichiro Omura and Tsuneo Ogura, Design and Demonstration of High Breakdown Voltage GaN-HEMT Using Field Plate Structure for Power Electronics Applications, International Conference on Solid State Devices and Materials (SSDM), 2003.09. |
| 100. |
Wataru Saito, Ichiro Omura, Satoshi Aida, Shigeo Koduki, Masaru Izumisawa and Tsuneo Ogura, 600V Semi-superjunction MOSFET, 15th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2003.04. |
| 101. |
Wataru Saito, Ichiro Omura, Ken'ichi Tokano, Tsuneo Ogura and Hiromichi Ohashi, Ultra Low On-Resistance SBD with P-Buried Floating Layer, 14th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2002.05. |
