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Hisashi Kino Last modified date：2024.04.25

Associate Professor / Department of Electronics
Faculty of Information Science and Electrical Engineering


Graduate School
Department of Electrical and Electronic Engineering
Graduate School of Information Science and Electrical Engineering
Undergraduate School
Department of Electrical Engineering and Computer Science
School of Engineering
Other Organization
Other


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Homepage
https://kyushu-u.elsevierpure.com/en/persons/hisashi-kino
　Reseacher Profiling Tool　Kyushu University Pure
https://si.ed.kyushu-u.ac.jp/
Academic Degree
Ph.D.
Country of degree conferring institution (Overseas)
No
Field of Specialization
Semiconductor devices, Integration technology
Research
Research Interests
  • Highly sensitive FET biosensor
    keyword : FET biosensor
    2023.10.
  • Semiconductor Memory with Tunnel FET
    keyword : Tunnel FET, Semiconductor memory
    2023.10.
  • Improving IC (Integrated Circuit) Performances by Controlling Stress Using Negative Thermal Expansion
    keyword : Negative thermal expansion, Stress control
    2023.10.
  • Three dimensional integrated circuits
    keyword : 3D IC
    2023.10.
Academic Activities
Books
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1. 熱膨張制御材料の開発と応用.
Papers
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1. H. Kino, T. Fukushima, T. Tanaka, Generation of STDP With Non-Volatile Tunnel-FET Memory for Large-Scale and Low-Power Spiking Neural Networks, IEEE Journal of the Electron Devices Society, 10.1109/JEDS.2020.3025336, 8, 1266-1271, 2020.09.
2. Hisashi Kino, Takafumi Fukushima, Tetsu Tanaka, Enhancement of carrier mobility in metal-oxide semiconductor field-effect transistors using negative thermal expansiongate electrodes, Applied Physics Express, 10.35848/1882-0786/ac9d24, 15, 11, 111004-1-111004-5, 2022.04, Strained-Si technology is crucial to improving the performance of metal-oxide-semiconductor field-effect transistors (MOSFETs). To introduce large strain into the channel, we proposed a structure for the negative thermal expansion gate electrode. In this study, we used manganese nitride as the gate material, which is a negative thermal expansion material. The fabricated MOSFETs with the manganese nitride gate showed a 10% increase in electron mobility compared to the MOSFET with the Al gate. The results show that the negative thermal expansion gate technology is promising as a technology booster for MOSFET scaling..
Presentations
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Membership in Academic Society
  • IEEE
  • The Japan Society of Applied Physics
  • The Electrochemical Society of Japan


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