記述言語：英語   掲載種別：研究論文（学術雑誌）  

Direct bonding of lithium tantalate to silicon at room temperature by using a self-sputtered bonding method

DOI： 10.7567/1347-4065/ab0ffd

記述言語：英語   掲載種別：研究論文（学術雑誌）  

Cu/SiO2 hybrid bonding obtained by surface-activated bonding method at room temperature using Si ultrathin films

DOI： 10.1016/j.mne.2018.11.004

記述言語：日本語   掲載種別：研究論文（その他学術会議資料等）  

Cu/SiO2 Hybrid Bonding at Room Temperature by Surface Activated Bonding Method Using Si Ultrathin Films

記述言語：その他   掲載種別：研究論文（その他学術会議資料等）  

Direct Bonding of Oxide Materials and Si at Room Temperature Using Self-sputtered Bonding Method

記述言語：日本語   掲載種別：研究論文（その他学術会議資料等）  

記述言語：日本語   掲載種別：研究論文（その他学術会議資料等）  

記述言語：日本語   掲載種別：研究論文（学術雑誌）  

We fabricated a p-ZnTe/n-ZnO heterojunction structure by a direct bonding technology. The surfaces of the p-ZnTe and n-ZnO substrates were activated by low-energy argon-ion bombardment under high vacuum, with keeping their roughness. Continuously, they brought into contact under controlled pressure at room temperature, and annealed in argon atmosphere as post process. Atomic-scale bonding was confirmed by transmission electron microscopy and scanning energy-dispersive X-ray spectroscopy. It was also confirmed that the electric rectifying characteristics depend on the bonding press time and the post anneal temperature.

DOI： 10.1541/ieejeiss.136.1761

記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）  

記述言語：英語   掲載種別：研究論文（学術雑誌）  

The bonding of metal electrodes and insulator hybrid interfaces is one of the key techniques in three-dimensional integration technology. Metal materials such as Cu or Al are easily directly bonded by surface activated bonding at room temperature, but insulator materials such as SiO2 or SiN are not. Using only Si ultrathin films, we propose a new bonding technique for SiO2/SiO2 bonding at room temperature. Two SiO2 surfaces, on which Si thin films were deposited, were contacted in vacuum. We confirmed that the thickness of the layer was about 7 nm by transmission electron microscopy observation and that the layer was non crystalline by electron energy loss spectroscopy analysis. No metal material was found in the bonding interface by energy-dispersive X-ray spectroscopy analysis. The surface energy was about 1 J/m(2), and the bonding strength was more than 25 MPa. This bonding technique was successfully realized to enable SiO2/SiO2 bonding without a metal adhesion layer. (C) 2016 The Japan Society of Applied Physics

DOI： 10.7567/JJAP.55.026503

記述言語：英語   掲載種別：研究論文（その他学術会議資料等）  

In this study, Co and Al ions co-doped ZnO nanoparticles (Zn(Al, Co) O NPs) were prepared by our original chemical preparation method. The obtained samples prepared by this method, were encapsulated in amorphous SiO2. X-ray diffraction (XRD) results showed Zn(Al, Co) O NPs had a single-phase nature with hexagonal wurtzite structure. These particle sizes could be controlled to be approximately 30 nm. We investigate the effect that the increase in the carrier has on the magnetization by doping Al to Co-doped ZnO NPs. The local structures were qualitatively analyzed using X-ray absorption fine structure (XAFS) measurements.

DOI： 10.1063/1.4941203

記述言語：日本語   掲載種別：研究論文（その他学術会議資料等）  

Bonding Technique of SiO2/SiO2 Bonding at Room Temperature by SAB Method for 3D Integration Technology

記述言語：日本語   掲載種別：研究論文（学術雑誌）  

It has been said that the end of Moore's law will be reached in 10 to 20 years. Three dimensional integration technology is expected to be a possible solution in the post-Moore era. The bonding of the metal electrode and insulator hybrid interfaces is one of key technique in three dimensional technology. The hybrid bonding technique is highly challenging issue. Surface activated bonding (SAB), which is a bonding method carried out at room or low temperatures, is expected to solve various problems which caused by heating process. Metal materials such as Cu or Al are easy to directly bond by SAB method at room temperature, but insulator materials such as SiO₂ or SiN is very difficult. First, we investigated the bonding interface of Cu/Cu by transmission electron microscopy (TEM) observations. No intermediate layers or voids were visible at the bonding interface. The bonded specimen fractured not at the interface of the bonded Cu/Cu, but at the interface between the thermal oxide layer and Ti film by tensile test. The current-voltage characteristic of the bonding interface was linear. Secondly, we proposed a new bonding technique for bonding of SiO₂/SiO₂ using Si ultra-thin films by applying the SAB method. The amorphous Si layer with the thickness of about 7 nm was observed at the bonding interface by TEM observation. The bonded specimen fractured at the glue interface and not the bonded interface by tensile test. The bonding strength is estimated to be higher than the adhesive glue for tensile test. We have shown that the SAB method at room temperature is a bonding technique that can fulfill requirements for hybrid bonding, which serves as both mechanical bonding and electrical connection, in 3D integration technology.

DOI： 10.1299/transjsme.15-00408

記述言語：日本語  

Study on the hybrid bonding technology using the surface activated bonding at room temperature for 3D integration

記述言語：英語   掲載種別：研究論文（学術雑誌）  

Characterization of Cu/Cu bonding interface prepared by surface activated bonding at room temperature

記述言語：日本語   掲載種別：研究論文（学術雑誌）  

We studied Cu-Cu direct bonding for the application of 3D integration. Thin Cu film deposited specimens are bonded under high vacuum by surface activated bonding method at room temperature. In the room-temperature direct bonding process, surface roughness has a strong influence on bonding. In general, metal bonding needs high bonding pressure. For successful bonding, it is important to reveal the influence of surface roughness and bonding pressure on the bonding properties. Therefore, we investigated the relationship between surface roughness and bonding strength with bonding pressure as the parameter. The specimen with smaller surface roughness than 1nm Ra was successfully bonded by bonding pressure of 10MPa, but for bigger roughness than 1nm Ra the successful bonding needed pressure of 50MPa.

DOI： 10.1541/ieejsmas.134.284

記述言語：英語   掲載種別：研究論文（その他学術会議資料等）  

The metal bonding is a key technology in the processes for the microelectromechanical systems (MEMS) devices and the semiconductor devices to improve functionality and higher density integration. Strong adhesion between surfaces at the atomic level is crucial; however, it is difficult to achieve close bonding in such a system. Cu films were deposited on Si substrates by vacuum deposition, and then, two Cu films were bonded directly by means of surface activated bonding (SAB) at room temperature. The two Cu films, with the surface roughness Ra about 1.3nm, were bonded by using SAB at room temperature, however, the bonding strength was very weak in this method. In order to improve the bonding strength between the Cu films, samples were annealed at low temperatures, between 323 and 473 K, in air. As the result, the Cu-Cu bonding strength was 10 times higher than that of the original samples without annealing.

DOI： 10.1063/1.4866626

記述言語：日本語   掲載種別：研究論文（その他学術会議資料等）  

Cu/Cu direct bonding by surface activated method

記述言語：英語   掲載種別：研究論文（その他学術会議資料等）  

A detailed and quantitative motivation for the necessity of room temperature (RT) bonding for wafer level packaging of silicon micro-mirrors will be given. Results on RT 6 inch wafer bonding with vacuum encapsulation on test structures are presented. Structured as well as unstructured wafers have been bonded at RT using a Mitsubishi Heavy Industries bonder. Unstructured wafers were used for the determination of the bonding strength, whereas the structured wafers were used for the evaluation of vacuum level and its stability with time. © 2012 Springer-Verlag Berlin Heidelberg.

DOI： 10.1007/s00542-012-1703-x

記述言語：英語   掲載種別：研究論文（その他学術会議資料等）  

Surface activated bonding (SAB) by Ar beam sputter etching has been proved to have ability to bond various semiconductor wafers at room temperature. In this paper, we report SAB of oxide wafers. Various oxide wafers were successfully bonded to Si wafers by SAB. Strong bonding equivalent to bulk strength was achieved without any heat treatments. Among the oxide wafers tested, SiO2 was only a material which was not form strong bond with Si at room-temperature. On the other hand, strength of oxide-to-oxide bonding by SAB was not so strong as bulk materials and was largely dependent on the bonded oxide materials. In case of oxideto-oxide bonding, SiO2 was again difficult to bond. Deposited thin oxide film such as TiO2 could be bonded by SAB and was effective to improve bonding properties. In summary, oxide wafers were successfully bonded by SAB at room-temperature, however its strength depends on oxide materials. © The Electrochemical Society.

DOI： 10.1149/1.2982908

記述言語：英語   掲載種別：研究論文（学術雑誌）  

An n-type phosphorus (P)-doped epitaxial diamond film with high conductivity was grown on a nitrogen (N)-doped or a boron (B)-doped C(001) substrate by gas-source molecular beam epitaxy (GSMBE) using methane and tri-n-butylphosphine. On the N-doped substrate, the electrical conductivity of the P-doped diamond film was measured to be 0.33 (Omega.cm)(-1) at RT with an activation energy of 0.12 eV. The Hall measurement showed it-type conduction and a carrier concentration of 1.6 x 10(18) cm(-3) at 400 degrees C, which was comparable to the P concentration determined by secondary ion mass spectrometry. These indicate the formation of a shallow P donor level with high electrical activation efficiency. On the B-doped substrate, we obtained the p-n characteristics with a rectification ratio of similar to 10(3) at 10 V. Electroluminescence (EL) in the visible and ultraviolet ranges was observed from the p-n junction at RT. Under the forward-bias condition, the EL spectrum showed both a main broad peak at 540 nm with two shoulders at 495 nm and 620 nm, and a peak at 270 nm, which were interpreted to be the transition between energy levels previously reported for B and N impurities. Therefore, the EL was concluded to be emitted from the B-doped substrate to which electrons were injected from the n-type epitaxial film.

開催年月日： 2010年8月

記述言語：英語  

国名：その他  

Annealing Effect of Cu-Cu Surface Bonding at Room Temperature

記述言語：日本語  

国名：日本国  

記述言語：英語  

国名：その他  

Room-Temperature Bonding of Oxide Wafers by Ar-beam Surface Activation

記述言語：英語  

国名：その他  

Cu-Cu Direct Bonding Achieved by Surface Activated Bonding at Room Temperature

記述言語：日本語  

国名：その他  

記述言語：日本語  

国名：その他  

記述言語：英語  

国名：その他  

Surface analysis of Cu films for hybrid bonding by surface activated bonding at room temperature

記述言語：日本語  

国名：その他  

記述言語：日本語  

国名：その他  

記述言語：英語  

国名：その他  

Bonding of SiO2 and SiO2 at Room Temperature Using Si Ultrathin Film

記述言語：日本語  

国名：その他  

記述言語：日本語  

国名：その他  

記述言語：日本語  

国名：その他  

Direct Bonding of SiO2/Si at Room Temperature using Self-Sputtered Bonding Method

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：その他  

Direct Bonding of LiTaO3/Si at Room Temperature Using Self-sputtered Bonding Method

記述言語：日本語  

国名：その他  

Direct Bonding of Oxide Materials and Si at Room Temperature Using Self-sputtered Bonding Method

記述言語：日本語  

国名：その他  

Cu/SiO2 Hybrid Bonding at Room Temperature by Surface Activated Bonding Method Using Si Ultrathin Films

記述言語：日本語  

国名：その他  

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日本語雑誌　査読論文数：2

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種別：大会・シンポジウム等 

種別：大会・シンポジウム等 

種別：大会・シンポジウム等 

種別：大会・シンポジウム等 

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