Updated on 2024/07/24

Information

 

写真a

 
TSUNODA ISAO
 
Organization
Faculty of Engineering Sciences Department of Collaborative Interdisciplinary Engineering Sciences Associate Professor
Title
Associate Professor
External link

Degree

  • Doctor of Philosophy in Engineering

Papers

  • Polarization Property Associated with Surface Plasmon Resonance in a Palladium Thin-Film Coated Aluminum Grating in a Conical Mounting and Its Application to Hydrogen Gas Detection

    Toyonori Matsuda, Isao Tsunoda, Shinichiro Koba, Yu Oshiro, Hiroyuki Odagawa

    Sensors   24 ( 6 )   1990 - 1990   2024.3

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    We have investigated a polarization property of the (specularly) reflected light from an aluminum grating, coated with a palladium (Pd) thin-film on its surface. The polarization property, which is associated with surface plasmon resonance (SPR), and occurs in the Pd thin-film on the aluminum grating in a conical mounting, is observed as a rapid change in the normalized Stokes parameter s3, around the resonance angle, θsp, at which point, SPR occurs. The sensing technique used the rapid change in s3 to allow us to successfully detect a small change in the complex refractive index of the Pd thin-film layer upon exposure to hydrogen gas, with a concentration near the lower explosion level. Experimental results showed that the sensing technique provided a sensitive and stable response when the Pd thin-film layer was exposed to gas mixtures containing hydrogen at concentrations of 1 to 4% (by volume) in nitrogen.

    DOI: 10.3390/s24061990

  • Assessment of Radiation Tolerance of Flash Memory by γ-Ray Irradiation.

    Kenichiro Takakura, Kensuke Matsumoto, Kousei Tateishi, Masashi Yoneoka, Isao Tsunoda, Shigekazu Suzuki, Shinji Kawatsuma

    J. Robotics Mechatronics   36 ( 1 )   88 - 94   2024.2

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    DOI: 10.20965/jrm.2024.p0088

  • Enhancement of Mg-induced lateral crystallization of amorphous germanium on an insulating substrate by two-step annealing

    Atsuki Morimoto, Towa Hirai, Ayato Takazaiku, Yo Eto, Hajime Kuwazuru, Kenichiro Takakura, Isao Tsunoda

    Japanese Journal of Applied Physics   63 ( 2 )   02SP50 - 02SP50   2024.1

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    Abstract

    Magnesium (Mg)-induced lateral crystallization (Mg-ILC) of amorphous germanium (Ge) on a SiO2 stacked structure was investigated. From Raman mapping images, the critical annealing temperature necessary to induce Mg-ILC of amorphous Ge was estimated to be about 350 °C. Furthermore, the Mg-ILC length was truly narrow (∼2 μm) compared with other metal catalysts after annealing at 350 °C for 1 h. To enhance the Mg-ILC, we have examined a two-step annealing method for Mg-ILC of amorphous Ge on SiO2. The Mg-ILC length is significantly enhanced (∼4.5 times) by using a two-step annealing process, which is due to the enhancement of Mg diffusion into amorphous Ge during first-stage low-temperature annealing.

    DOI: 10.35848/1347-4065/ad17ef

  • Investigation into Ethanol Concentration Changes of Ethanol–Water Solution Using Polarization Property Associated with Surface Plasmon Resonance in Aluminum Grating in Conical Mounting

    Toyonori Matsuda, Hiroyuki Odagawa, Isao Tsunoda,Masanori Nagata, Takao Kawakita

    Sensors and Materials   35 ( 11 )   3551 - 3551   2023.11

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    DOI: 10.18494/sam4611

  • Study of deep levels in the Mg2Si grown by vertical Bridgeman method

    Kouki Fukushima, Naoki Mizunuma, Tatsuya Uematsu, Kyoko Shimizu, Takehiro Ota, Isao Tsunoda, Masashi Yoneoka, Haruhiko Udono, Kenichiro Takakura

    Japanese Journal of Applied Physics   62 ( SD )   SD1012 - SD1012   2022.12

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    Abstract

    The electrical characteristics of a Mg2Si p–n junction diode was investigated. The n-Mg2Si substrate was grown by using the vertical-Bridgeman method. A p–n junction was fabricated by the thermal diffusion of Ag as an acceptor. The reverse current of the Au/Ag electrode diode was larger than that of the Ag electrode diode. The trap levels in the n-Mg2Si bulk were investigated using deep-level transient spectroscopy. The magnitude of DLTS signal of E1 with the Au/Ag electrode diode was larger than that for the signals at the other trap levels. The E1 level corresponds to an Au-related trap that diffuses via thermal annealing during the alloying process. The open-circuit-voltage-decay study suggests the existence of a minority-carrier trap in n-Mg2Si. The minority-carrier lifetime was shorter for Au/Ag electrode diodes. Therefore, Au may be involved in the formation of minority-carrier traps, as well as in the formation of majority-carrier traps.

    DOI: 10.35848/1347-4065/aca8b3

  • Rapid change in polarization accompanying Fabry–Pérot resonance in anodic porous alumina coated with a gold thin film

    Toyonori Matsuda, Isao Tsunoda, Masanori Nagata, Takao Kawakita, Shumpei Noguchi

    Applied Optics   61 ( 34 )   10178 - 10178   2022.11

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    We experimentally investigate the polarization property of the specularly reflected light from an anodic porous alumina (APA) membrane coated with a gold (Au) thin film. As a result, we reveal a rapid change in the normalized Stokes parameter of the specularly reflected light around the angle of incidence at which the resonance absorption of the incident light occurs. The rapid change in demonstrates that the specularly reflected light can rapidly be right- to left-elliptically polarized via linear polarization at the zero-crossing point of . Moreover, is located close to , and as well as depend on the occurrence conditions of the resonance absorption. From numerical aspects based on the Maxwell Garnett effective medium approximation, we clarify that the rapid change in accompanies the Fabry–Pérot (FP) resonance in the Au-coated APA membrane. The numerical results also suggest that the change in the refractive index of the filling material into nanopores of the Au-coated APA membrane can be successfully estimated by using the rapid change in .

    DOI: 10.1364/ao.474161

  • Low temperature formation of high-quality crystalline Ge (1 1 1) by improving Au catalyst crystallinity Reviewed

    Kazuaki Sumi, Noboru Shimizu, Kenichiro Takakura, Isao Tsunoda

    Journal of Crystal Growth   572   126270 - 126270   2021.10

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    DOI: 10.1016/j.jcrysgro.2021.126270

  • Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors Reviewed

    Joan Marc Rafi, Giulio Pellegrini, Philippe Godignon, Sofia Otero Ugobono, Gemma Rius, Isao Tsunoda, Masashi Yoneoka, Kenichiro Takakura, Gregor Kramberger, Michael Moll

    IEEE Transactions on Nuclear Science   67 ( 12 )   2481 - 2489   2020.12

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    Owing to their low dark current, high transparency, high thermal conductivity, and potential radiation hardness, there is a special interest in silicon carbide (SiC) devices for radiation monitoring in radiation harsh environments and with elevated temperatures and, especially, for the plasma diagnostic systems in future nuclear fusion reactors. In this work, four-quadrant p-n junction diodes produced on epitaxial 4H-SiC substrates are studied. The impact of electron, neutron, and proton irradiations (up to fluences of 1 x 10(16) electrons (e)/cm(2), 2 x 10(15) neutrons (n)/cm(2), and 2.5 x 10(15) protons (p)/cm(2), respectively) on the electrical characteristics is studied by means of current-voltage (I - V) and capacitance-voltage (C - V) techniques. Regardless of the particle type and applied fluences, the results show similar low reverse currents for irradiated SiC devices, which are at least about four orders of magnitude lower than comparable Si devices. The effects of irradiation on interquadrant resistance and charge build-up in the interquadrant isolation are assessed. Furthermore, device performance as a radiation detector is investigated upon exposure to a collimated Pu-239-Am-241-Cm-244 tri-alpha source. The performance at room temperature is preserved even for the highest irradiation fluences, despite the fact that the rectification character in electrical characteristics is lost. From the results, advantages of using SiC devices in alpha particle detection in harsh environments can be envisaged.

    DOI: 10.1109/tns.2020.3029730

  • Au induced lateral crystallization of amorphous Ge with stress stimulation at 130 ○C Reviewed

    Taiki Nishijima, Satoshi Shimizu, Kinta Kusano, Kazuki Kudo, Masahiro Furuta, Yutaka Kusuda, Shinichi Motoyama, Nobuyuki Naka, Tomoko Numata, Kenichiro Takakura, Isao Tsunoda

    AIP Advances   10 ( 5 )   055306 - 055306   2020.5

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    The effect of stress stimulation on gold (Au) induced lateral crystallization (GILC) of amorphous Ge on insulating substrates is investigated. As a result, the GILC is significantly enhanced by using compressive residual stresses of up to 200 MPa in TEOS-SiO2. In addition, it is found that the annealing temperature necessary to cause the GILC for a short annealing time (60 min) can be decreased to 130 degrees C. We have demonstrated that the GILC enhancement was caused by the stress stimulation contributed to bond rearrangement and Au easily diffused into Ge. This study proposes a unique low temperature crystallization technique that introduces a residual film stress on metal induced lateral crystallization, paving the way for the low-cost fabrication of flexible electronic devices on low-softening temperature plastic substrates.

    DOI: 10.1063/5.0004326

  • Electrical properties of pseudo-single-crystalline Ge films grown by Au-induced layer exchange crystallization at 250 ºC Reviewed

    H. Higashi, K. Kudo, K. Yamamoto, S. Yamada, T. Kanashima, I. Tsunoda, H. Nakashima, K. Hamaya

    J. Appl. Phys.   123 ( 21 )   215704 - 215704   2018.6

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    Electrical properties of pseudo-single-crystalline Ge films grown by Au-induced layer exchange crystallization at 250 °C

    DOI: 10.1063/1.5031469

  • Four-quadrant silicon and silicon carbide photodiodes for beam position monitor applications: Electrical characterization and electron irradiation effects Reviewed

    J. M. Rafí, G. Pellegrini, P. Godignon, D. Quirion, S. Hidalgo, O. Matilla, A. Fontserè, B. Molas, K. Takakura, I. Tsunoda, M. Yoneoka, D. Pothin, P. Fajardo

    Journal of Instrumentation   13 ( 1 )   C01045   2018.1

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    Silicon photodiodes are very useful devices as X-ray beam monitors in synchrotron radiation beamlines, as well as other astronomy and space applications. Owing to their lower susceptibility to variable temperature and illumination conditions, there is also special interest in silicon carbide devices for some of these applications. Moreover, radiation hardness of the involved technologies is a major concern for high-energy physics and space applications. This work presents four-quadrant photodiodes produced on ultrathin (10 μm) and bulk Si, as well as on SiC epilayer substrates. An extensive electrical characterization has been carried out by using current-voltage (I-V) and capacitance-voltage (C-V) techniques. The impact of different temperature (from -50C to 175C) and visible light conditions on the electrical characteristics of the devices has been evaluated. Radiation effects caused by 2 MeV electron irradiation up to 1×1014, 1×1015 and 1×1016 e/cm2 fluences have been studied. Special attention has been devoted to the study of charge build-up in diode interquadrant isolation, as well as its impact on interquadrant resistance. The study of these electrical properties and its radiation-induced degradation should be taken into account for device applications.

    DOI: 10.1088/1748-0221/13/01/C01045

  • A crystalline germanium flexible thin-film transistor Reviewed

    H. Higashi, M. Nakano, K. Kudo, Y. Fujita, S. Yamada, T. Kanashima, I. Tsunoda, H. Nakashima, K. Hamaya

    APPLIED PHYSICS LETTERS   111 ( 22 )   222105-1 - 222105-4   2017.11

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    We experimentally demonstrate a flexible thin-film transistor (TFT) with (111)-oriented crystalline germanium (Ge) layers grown by a gold-induced crystallization method. Accumulation-mode metal source/drain p-channel Ge TFTs are fabricated on a polyimide film at <= 400 degrees C. A field-effect mobility (mu(FE)) of 10.7 cm(2)/Vs is obtained, meaning the highest mu(FE) in the p-TFTs fabricated at <= 400 degrees C on flexible plastic substrates. This study will lead to high-performance flexible electronics based on an inorganic-semiconductor channel. Published by AIP Publishing.

    DOI: 10.1063/1.5007828

  • Thermoelectric Properties of Ge-Rich GeSn Films Grown on Insulators Reviewed

    M. Kurosawa, K. Liu, M. Izawa, I. Tsunoda, S. Zaima

    ECS Transactions   75 ( 8 )   481 - 487   2016.9

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    DOI: 10.1149/07508.0481ecst

  • Au induced low-temperature formation of preferentially (111)-oriented crystalline Ge on insulator

    Hayato Okamoto, Kohei Kudo, Tatsushi Nomitsu, Ryosuke Mochii, Kenta Moto, Kenichiro Takakura, Isao Tsunoda

    Japanese Journal of Applied Physics   55 ( 4S )   04EJ10 - 04EJ10   2016.3

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    Abstract

    The effects of Au insertion in solid-phase crystallization for amorphous Ge films on SiO2/Si substrates were investigated to achieve oriented crystalline Ge. After high-temperature annealing above 300 °C, Au atoms were highly diffused in the amorphous Ge layer. The resulting crystalline Ge consisted of random grains formed by crystal nucleation in the entire Ge region. However, when annealing temperature was decreased to below 250 °C, Au atoms were localized at their initial position even after a long annealing (20 h). Moreover, formation of preferentially (111)-oriented crystalline Ge was achieved without using the metal-induced layer-exchange crystallization method. These results suggest that crystal nucleation preferentially occurs at the amorphous Ge/Au interface, and subsequently the nucleus growth progresses into the Ge layer.

    DOI: 10.7567/jjap.55.04ej10

  • Enhancement of Au-induced lateral crystallization in electron-irradiated amorphous Ge on SiO2

    Kenta Moto, Shin Sakiyama, Hayato Okamoto, Hideyuki Hara, Hiroto Nishimura, Kenichiro Takakura, Isao Tsunoda

    Japanese Journal of Applied Physics   55 ( 4S )   04EJ06 - 04EJ06   2016.3

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    Abstract

    We have investigated the acceleration energy (0.5–2.0 MeV)-modulated electron irradiation effect of Au-induced lateral crystallization for amorphous Ge on SiO2. As a result, low-energy electron (≤1.0 MeV) irradiation was not effective for Au-induced lateral crystallization. On the other hand, when high-energy electron (2.0 MeV) irradiation was utilized, the lateral growth velocity was significantly enhanced (∼1.8 times). We have confirmed that the Au-induced lateral growth is enhanced by electron irradiation, which is due to the introduction of point defects into amorphous Ge, allowing the easy diffusion of Au atoms.

    DOI: 10.7567/jjap.55.04ej06

  • Thermal recovery process of electron irradiated Si1‐xCx source/drain n‐MOSFETs

    Kenichiro Takakura, Masato Hori, Masashi Yoneoka, Isao Tsunoda, Toshiyuki Nakashima, Eddy Simoen, Cor Claeys

    physica status solidi c   12 ( 12 )   1405 - 1408   2015.9

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    Abstract

    In this study, the performance degradation by electron irradiation and the thermal recovery process of Si0.99C0.01 source/drain (S/D) n‐MOSFETs are reported. The electron mobility is 15% enhanced by 1%‐C doping in the S/D stressor region. The electron mobility is degraded by 2‐MeV electron irradiation, but the relative change was the same irrespective of C doping and electron fluence. This fact indicates that tensile‐strain relaxation by displacement damage in the Si:C stressors is not significantly impacting the mobility degradation by electron irradiation. Evidence is given that increased scattering in the channel is the main cause of mobility degradation by 2‐MeV electron irradiation. In addition, it is shown that for a fluence of 5x1017 e/cm2, the electrical performance is recovered by thermal annealing. After 323 K for 15 min annealing, the mobility amounts to 95% of the pre‐irradiation value. In the case of Si0.7Ge0.3 S/D p‐MOSFETs, it has been shown before that the device performance is recovered to the same degree for the same irradiation/thermal annealing conditions of this study. CMOS circuits are fabricated by a combination of n‐MOSFETs and p‐MOSFETs, therefore, it can be confirmed that strained CMOS devices using Si:C S/D n‐MOSFETs and SiGe S/D p‐MOSFETs, respectively, can operate in the radiation environment studied here. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

    DOI: 10.1002/pssc.201510088

  • Hole trap distribution on 2 MeV electron irradiated high-k dielectrics Reviewed

    Salvador Dueñas, Helena Castán, Héctor García, Lisa María Fuentes, Luis Bailón, Francesca Campabadal, Joan Marc Rafí, Mireia Bargalló González, Kenitirou Takakura, Isao Tsunoda, Masashi Yoneoka

    Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena   33 ( 3 )   032201 - 032201   2015.5

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    DOI: 10.1116/1.4915617

  • A pseudo-single-crystalline germanium film for flexible electronics

    H. Higashi, K. Kasahara, K. Kudo, H. Okamoto, K. Moto, J.-H. Park, S. Yamada, T. Kanashima, M. Miyao, I. Tsunoda, K. Hamaya

    Applied Physics Letters   106 ( 4 )   2015.1

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    We demonstrate large-area (∼600 μm), (111)-oriented, and high-crystallinity, i.e., pseudo-single-crystalline, germanium (Ge) films at 275 °C, where the temperature is lower than the softening temperature of a flexible substrate. A modulated gold-induced layer exchange crystallization method with an atomic-layer deposited Al2O3 barrier and amorphous-Ge/Au multilayers is established. From the Raman measurements, we can judge that the crystallinity of the obtained Ge films is higher than those grown by aluminum-induced-crystallization methods. Even on a flexible substrate, the pseudo-single-crystalline Ge films for the circuit with thin-film transistor arrays can be achieved, leading to high-performance flexible electronics based on an inorganic-semiconductor channel.

    DOI: 10.1063/1.4906612

  • Enhanced Au induced lateral crystallization in electron-irradiated amorphous Ge on SiO2 Reviewed

    Shin Sakiyama, Takahiro Kaneko, Takanobu Ootsubo, Takatsugu Sakai, Kazutoshi Nakashima, Kenta Moto, Masashi Yoneoka, Kenichiro Takakura, Isao Tsunoda

    Thin Solid Films   557   151 - 154   2014.4

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    DOI: 10.1016/j.tsf.2013.10.018

  • Radiation tolerance of Si1−yCy source/drain n-type metal oxide semiconductor field effect transistors with different carbon concentrations

    Toshiyuki Nakashima, Yuki Asai, Masato Hori, Masashi Yoneoka, Isao Tsunoda, Kenichiro Takakura, Mireia Bargallo Gonzalez, Eddy Simoen, Cor Claeys, Kenji Yoshino

    Thin Solid Films   557   307 - 310   2014.4

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    DOI: 10.1016/j.tsf.2013.10.069

  • Evaluation of Degradation due to Electron Irradiation of Si1-xCx S/D n-type MOSFETs

    Masato Hori, Yuki Asai, Masashi Yoneoka, Isao Tsunoda, Kenichiro Takakura, Toshiyuki Nakashima, Mireia B. Gonzalez, Eddy Simoen, Cor Claeys

    Materials Science Forum   778-780   1197 - 1200   2014.2

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    To solve the problem of the limitation to improve device performance in standard Si integration technologies and to develop radiation-harsh devices, the irradiation effects of Si1-xCx source/drain (S/D) n-type metal oxide semiconductor field effect transistors (n-MOSFETs) have been investigated. It is shown that the drain current and the maximum electron mobility of Si1-xCx n-MOSFETs decrease by electron irradiation. The reduction of the device performance can be explained by the radiation-induced lattice defects in the devices. However, the electron mobility enhancement effect by adding C remained after an electron irradiation up to 5×1017 e/cm2.

    DOI: 10.4028/www.scientific.net/msf.778-780.1197

  • Effect of post-deposition annealing on structural and optical properties of RF magnetron sputtered β−Ga2O3 films

    R. Aida, K. Minami, K. Ishibashi, J. Kudou, M. Takahara, I. Tsunoda, K. Takakura, T. Nakashima, M. Shibuya, K. Murakami

    AIP Conference Proceedings   2014.2

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    DOI: 10.1063/1.4865671

  • Investigation of the crystalline quality of a gallium oxide thick film grown by RF magnetron sputtering Reviewed

    Kazuya Ishibashi, Ryohei Aida, Motoki Takahara, Jyun Kudo, Isao Tsunoda, Kenichiro Takakura, Toshiyuki Nakashima, Mutsuo Shibuya, Katsuya Murakami

    Physica Status Solidi (C) Current Topics in Solid State Physics   10 ( 11 )   1588 - 1591   2013.11

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    Crystalline quality and optical properties of gallium oxide films grown on SiO2substrates by RF magnetron sputtering were studied. After the post annealing, it could be confirmed growth of gallium oxide (Ga2O3) film changed in a β -Ga2O3 film. Estimated optical energy gap of as-grown and post annealed films are the same from 4.85 to 4.90 eV. The energy gap for as-deposited film corresponds to band gap of β -Ga2O3.It has a property of β -Ga2O3 nevertheless the as-deposited Ga2O3 films. The integrated absorption coefficient under the energy gap decreases with increasing thickness of Ga2O3 film. These results indicate that crystalline quality of β -Ga2O3 film is improved by increment the film thickness. © 2013 WILEY-VCH Verlag GmbH &amp
    Co. KGaA, Weinheim.

    DOI: 10.1002/pssc.201300242

  • Impact of electrical stress on the electrical characteristics of 2MeV electron irradiated metal-oxide-silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics

    J.M. Rafí, M.B. González, K. Takakura, I. Tsunoda, M. Yoneoka, O. Beldarrain, M. Zabala, F. Campabadal

    Solid-State Electronics   89   198 - 206   2013.11

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    DOI: 10.1016/j.sse.2013.08.011

  • 2MeV electron irradiation effects on the electrical characteristics of MOS capacitors with ALD Al2O3 dielectrics of different thickness Reviewed

    J.M. Rafí, M.B. González, K. Takakura, I. Tsunoda, M. Yoneoka, O. Beldarrain, M. Zabala, F. Campabadal

    Microelectronics Reliability   53 ( 9-11 )   1333 - 1337   2013.9

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    DOI: 10.1016/j.microrel.2013.07.023

  • Increased radiation hardness of short-channel electron-irradiated Si 1-xGex source/drain p-type metal oxide semiconductor field-effect transistors at higher ge content Reviewed

    Toshiyuki Nakashima, Masashi Yoneoka, Isao Tsunoda, Kenichiro Takakura, Mireia Bargallo Gonzalez, Eddy Simoen, Cor Claeys, Kenji Yoshino

    Japanese Journal of Applied Physics   52 ( 9 )   2013.9

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    In this work, it is shown that the maximum hole mobility of compressively strained Si1xGex source-drain (S/D) p-MOSFETs is degraded after high-fluence 2MeV electron irradiation, suggesting the loss of strain in the Si channel caused by the radiation-induced displacement damage. This is supported by the fact that the mobility reduction after irradiation is larger for SiGe S/D devices than for Si references at the same fluence (5 1017 cm2) and becomes more pronounced for shorter gate lengths. At the same time, however, it is found that the extent of mobility reduction becomes smaller for p-MOSFETs with a higher Ge content (35%, compared with 20 or 30%). Finally, it is concluded that, for shorter devices, the displacement-damage-related degradation mechanism becomes less pronounced with increasing Ge content in Si1xGex S/D regions. © 2013 The Japan Society of Applied Physics.

    DOI: 10.7567/JJAP.52.094201

  • Ge content dependence of radiation damage in Si1-xGex source/drain p-type metal oxide semiconductor field effect transistors Reviewed

    Toshiyuki Nakashima, Masashi Yoneoka, Isao Tsunoda, Kenichiro Takakura, Mireia Bargallo Gonzalez, Eddy Simoen, Cor Claeys, Kenji Yoshino

    Physica Status Solidi (C) Current Topics in Solid State Physics   10 ( 7-8 )   1148 - 1151   2013.8

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    The 2-MeV electron radiation damage of Si1-xGex source/drain (S/D) p-type metal oxide semiconductor field effect transistors (p-MOSFETs) with different Ge contents is studied. Before electron irradiation, an enhancement of the hole mobility with Ge content of the S/D stressors is clearly observed. On the other hand, after electron irradiation, the drain current and the maximum hole mobility decreases with increasing electron fluence for all Ge contents, because of lattice defects are introduced by the electron irradiation in the Si channel. The threshold voltage shifts and the maximum hole mobility degradation is independent on the Ge content for all electron fluences. These results indicate that the strain-induced hole mobility enhancement due to Ge doping is retained after electron irradiation in the studied device structure. This indicates that the compressive strain is maintained in the channel. © 2013 WILEY-VCH Verlag GmbH &amp
    Co. KGaA, Weinheim.

    DOI: 10.1002/pssc.201200820

  • 2MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon Reviewed

    H. García, H. Castán, S. Dueñas, L. Bailón, F. Campabadal, J.M. Rafí, M. Zabala, O. Beldarrain, H. Ohyama, K. Takakura, I. Tsunoda

    Thin Solid Films   534   482 - 487   2013.5

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    DOI: 10.1016/j.tsf.2013.02.004

  • 2 MeV electron irradiation effects on the electrical characteristics of metal–oxide–silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics Reviewed

    J.M. Rafí, F. Campabadal, H. Ohyama, K. Takakura, I. Tsunoda, M. Zabala, O. Beldarrain, M.B. González, H. García, H. Castán, A. Gómez, S. Dueñas

    Solid-State Electronics   79   65 - 74   2013.1

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    DOI: 10.1016/j.sse.2012.06.011

  • Effects of Proton Irradiation on Optical and Electrical Properties of Cu(In,Ga)Se$_{2}$ Solar Cells Reviewed

    Yuiko Hirose, Moe Warasawa, Isao Tsunoda, Kenichiro Takakura, Mutsumi Sugiyama

    Japanese Journal of Applied Physics   51   111802 - 111802   2012.11

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    DOI: 10.1143/jjap.51.111802

  • Local compressive stress generation in electron irradiated boron-doped Si 0.75Ge 0.25/Si devices Reviewed

    Isao Tsunoda, Toshiyuki Nakashima, Nobuyuki Naka, Tatsuya Idemoto, Masashi Yoneoka, Kenichiro Takakura, Kenji Yoshino, Mireia Bargallo Gonzalez, Eddy Simoen, Cor Claeys, Hidenori Ohyama

    Physica Status Solidi (C) Current Topics in Solid State Physics   9 ( 10-11 )   2058 - 2061   2012.10

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    We have investigated the stress behavior in 2-MeV electron irradiated boron-doped Si 0.75Ge 0.25/Si-substrate heterojunctions by using Raman spectroscopy. For a high fluence (~1x10 18 e/cm 2), the Raman peak of the Si-Si bonds in the boron-doped Si 0.75Ge 0.25 layer has a tendency to move toward the high wave number side. The tendency increases with increasing electron fluence. This could be explained by local compressive stress variations in the Si 0.75Ge 0.25 layer during irradiation with varying fluence, due to the difference in the generation probability of the knock-on atoms for silicon, germanium and boron. © 2012 WILEY-VCH Verlag GmbH &amp
    Co. KGaA, Weinheim.

    DOI: 10.1002/pssc.201200076

  • Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si Reviewed

    Kenichiro Takakura, Suguru Funasaki, Isao Tsunoda, Hidenori Ohyama, Daisuke Takeuchi, Toshiyuki Nakashima, Mutsuo Shibuya, Katsuya Murakami, Eddy Simoen, Cor Claeys

    Physica B: Condensed Matter   407 ( 15 )   2900 - 2902   2012.8

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    DOI: 10.1016/j.physb.2011.08.061

  • Gate-Length Dependent Radiation Damage in 2-MeV Electron-Irradiated Si1-xGex S/D p-MOSFETs Reviewed

    Toshiyuki Nakashima, Tatsuya Idemoto, Isao Tsunoda, Kenichiro Takakura, Masashi Yoneoka, Hidenori Ohyama, Kenji Yoshino, Eddy Simoen, Cor Claeys

    Materials Science Forum   725   235 - 238   2012.7

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    The effect of 2-MeV electron irradiation of Si1-xGexS/D p-MOSFETs with different gate length and Ge concentration is studied. After electron irradiation, the maximum hole mobility decreases with increasing electron fluence for all gate lengths. In particular, after 5 x 1017e/cm2irradiation, the maximum hole mobility drastically decreases at short channel region for x = 0.3. Furthermore, a negative shift of the threshold voltage is clearly observed. These degradations can be explained both by the lattice defects and the stress relaxation in the Si channel created by atomic displacements.

    DOI: 10.4028/www.scientific.net/msf.725.235

  • XRD Investigation of the Crystalline Quality of Sn Doped β-Ga2O3 Films Deposited by the RF Magnetron Sputtering Method Reviewed

    Jyun Kudou, Suguru Funasaki, Motoki Takahara, Isao Tsunoda, Kenichiro Takakura, Hidenori Ohyama, Toshiyuki Nakashima, Mutsuo Shibuya, Katsuya Murakami, Eddy Simoen, Cor Claeys

    Materials Science Forum   725   269 - 272   2012.7

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    For the purpose of increasing the conductivity of β-Ga2O3 films, Sn doping in the β-Ga2O3 films has been explored using co-sputtering. Growth of β-Ga2O3 was confirmed by the XRD pattern for the undoped sample. However, it is shown that the Ga2O3 phase is transformed from the β to the γ phase by Sn doping, because of the increase of the phase transition temperature from the γ to the β phase. To improve the crystalline quality, additional annealing at 900°C for 60 min is performed to the Sn doped film. The XRD peaks corresponding with β-Ga2O3 could be confirmed after the additional annealing.

    DOI: 10.4028/www.scientific.net/msf.725.269

  • Improvement of the Crystalline Quality of β-Ga2O3 Films by High-Temperature Annealing Reviewed

    Motoki Takahara, Suguru Funasaki, Jyun Kudou, Isao Tsunoda, Kenichiro Takakura, Hidenori Ohyama, Toshiyuki Nakashima, Mutsuo Shibuya, Katsuya Murakami, Eddy Simoen, Cor Claeys

    Materials Science Forum   725   273 - 276   2012.7

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    For the purpose of improving the crystalline quality of undoped and Si doped β-Ga2O3 films, high temperature annealing at 900°C was performed. The crystalline quality of the films investigated using scanning electron microscopy and X-ray diffraction. Also the conductivity of the films is compared before and after the annealing. After the 900°C annealing, the XRD peaks intensity corresponding to β-Ga2O3 is increased. This result indicates that the crystalline quality improves by the high temperature annealing.

    DOI: 10.4028/www.scientific.net/msf.725.273

  • Radiation damage of Si1-xGex S/D p-type metal oxide semiconductor field effect transistor with different Ge concentrations Reviewed

    T. Nakashima, T. Idemoto, I. Tsunoda, K. Takakura, M. Yoneoka, H. Ohyama, K. Yoshino, M.B. Gonzalez, E. Simoen, C. Claeys

    Thin Solid Films   520 ( 8 )   3337 - 3340   2012.2

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    DOI: 10.1016/j.tsf.2011.10.112

  • Electron Irradiation Effects on Atomic Layer Deposited High-k Gate Dielectrics

    Hector García, Helena Castán, Salvador Dueñas, Luis Bailón, Francesca Campabadal, Joan Marc Rafi, Miguel Zabala, Oihane Beldarrain, Hidenori Ohyama, Kenichirou Takakura, Isao Tsunoda

    ECS Transactions   41 ( 3 )   349 - 359   2011.10

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    Electron radiation effects on the electrical properties of Al2O3 and HfO2-based MIS capacitors have been studied. High-k dielectrics were grown by atomic layer deposition, and capacitors were exposed to three different electron radiation doses. Capacitance-voltage, deep-level transient spectroscopy, conductance transients, flat-band voltage transients and current-voltage techniques were used to characterize the samples. In all cases, positive charge is trapped in the dielectrics after irradiation. Insulator/semiconductor interface quality can be improved for low irradiation doses. However, for high doses interface quality worsens. Irradiation always degrades the dielectric layers in terms of gate leakage current.

    DOI: 10.1149/1.3633051

  • Damages of Ge devices by 2-MeV electrons and their recovery Reviewed

    H. Ohyama, K. Sakamoto, H. Sukizaki, K. Takakura, M. Tsukamoto, K. Matsuo, I. Tsunoda, I. Kato, T. Nakashima, E. Simoen, B. De Jaeger, C. Claeys

    Microelectronic Engineering   88 ( 4 )   480 - 483   2011.4

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    DOI: 10.1016/j.mee.2010.10.020

  • Evaluation of electron irradiated embedded SiGe source/drain diodes by Raman spectroscopy Reviewed

    H. Ohyama, N. Naka, K. Takakura, I. Tsunoda, M.B. Gonzalez, E. Simoen, C. Claeys

    Microelectronic Engineering   88 ( 4 )   484 - 487   2011.4

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    DOI: 10.1016/j.mee.2010.11.006

  • SiGe-S/D p-MOSFETの電子線照射による劣化と熱処理による回復特性

    中島 敏之, 出本 竜也, 角田 功, 高倉 健一郎, 米岡 将士, 大山 英典, 吉野 賢二

    応用物理学会学術講演会講演予稿集   2011.1   2885 - 2885   2011.3

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    DOI: 10.11470/jsapmeeting.2011.1.0_2885

  • Fabrication of Back-Side Illuminated Complementary Metal Oxide Semiconductor Image Sensor Using Compliant Bump Reviewed

    Naoya Watanabe, Isao Tsunoda, Takayuki Takao, Koichiro Tanaka, Tanemasa Asano

    Japanese Journal of Applied Physics   49 ( 4 )   04DB01 - 04DB01   2010.4

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    DOI: 10.1143/jjap.49.04db01

  • Thickness-dependent stress-relaxation in thin SGOI structures and its improvement Reviewed

    Masanori Tanaka, Isao Tsunoda, Taizoh Sadoh, Toyotsugu Enokida, Masaharu Ninomiya, Masahiko Nakamae, Masanobu Miyao

    Thin Solid Films   508 ( 1-2 )   247 - 250   2006.6

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    DOI: 10.1016/j.tsf.2005.07.316

  • Direct formation of strained Si on insulator by laser annealing Reviewed

    Isao Tsunoda, Ryo Matsuura, Masanori Tanaka, Hajime Watakabe, Toshiyuki Sameshima, Masanobu Miyao

    Thin Solid Films   508 ( 1-2 )   96 - 98   2006.6

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    DOI: 10.1016/j.tsf.2005.08.415

  • Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H+ irradiation and postannealing Reviewed

    Masanobu Miyao, Masanori Tanaka, Isao Tsunoda, Taizoh Sadoh, Toyotsugu Enokida, Hiroyasu Hagino, Masaharu Ninomiya, Masahiko Nakamae

    Applied Physics Letters   88 ( 14 )   142105 - 142105   2006.4

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    DOI: 10.1063/1.2192644

  • Improved Oxidation-Induced Ge Condensation Technique Using H+Implantation and Post Annealing for Highly Stress-Relaxed Ultrathin SiGe on Insulator Reviewed

    Masanori Tanaka, Isao Tsunoda, Taizoh Sadoh, Toyotsugu Enokida, Masaharu Ninomiya, Masahiko Nakamae, Masanobu Miyao

    Japanese Journal of Applied Physics   45 ( 4B )   3147 - 3149   2006.4

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    DOI: 10.1143/jjap.45.3147

  • Ge fraction dependent improved thermal stability ofin situdoped boron in polycrystalline Si1−xGex (0⩽x⩽0.5) films on SiON Reviewed

    Masanobu Miyao, Isao Tsunoda, Taizoh Sadoh, Akihiro Miyauchi

    Journal of Applied Physics   97 ( 5 )   054909 - 054909   2005.3

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    DOI: 10.1063/1.1854731

  • Enhanced crystal nucleation in a-Si on SiO2 by local Ge doping Reviewed

    T. Sadoh, K. Nagatomo, I. Tsunoda, A. Kenjo, T. Enokida, M. Miyao

    Thin Solid Films   464-465   99 - 102   2004.10

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    DOI: 10.1016/j.tsf.2004.06.010

  • Nucleation Control in Solid-Phase Crystallization of a-Si/SiO2by Local Ge Insertion Reviewed

    Isao Tsunoda, Kei Nagatomo, Atsushi Kenjo, Taizoh Sadoh, Shinya Yamaguchi, Masanobu Miyao

    Japanese Journal of Applied Physics   43 ( 4B )   1901 - 1904   2004.4

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    DOI: 10.1143/jjap.43.1901

  • 絶縁膜上におけるSi1-xGex(0≦x≦1)混晶半導体の低温成長 に関する研究

    角田 功

    九州大学   2004.3

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  • Solid-phase crystallization of high-quality Si films on SiO2 by local Ge-insertion Reviewed

    I. Tsunoda, K. Nagatomo, A. Kenjo, T. Sadoh, M. Miyao

    Thin Solid Films   451-452   489 - 492   2004.3

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    DOI: 10.1016/j.tsf.2003.11.011

  • Enhanced crystal nucleation in a-SiGe/SiO2 by ion-irradiation assisted annealing Reviewed

    Isao Tsunoda, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

    Applied Surface Science   224 ( 1-4 )   231 - 234   2004.3

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    DOI: 10.1016/j.apsusc.2003.08.051

  • 絶縁膜上におけるSiGe結晶成長とデバイス応用 Reviewed

    宮尾 正信, 角田 功, 菅野 裕士, 長友 圭, 佐道 泰造, 権丈 淳

    日本結晶成長学会誌, vol.31, pp.22-27   2004.1

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  • Enhanced solid-phase growth of β-FeSi2 by pre-amorphization Reviewed

    Y. Murakami, I. Tsunoda, H. Kido, A. Kenjo, T. Sadoh, M. Miyao, T. Yoshitake

    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms   206   304 - 307   2003.5

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    DOI: 10.1016/s0168-583x(03)00750-x

  • Metal-Induced Solid-Phase Crystallization of Amorphous SiGe Films on Insulator Reviewed

    Hiroshi Kanno, Isao Tsunoda, Atsushi Kenjo, Taizoh Sadoh, Shinya Yamaguchi, Masanobu Miyao

    Japanese Journal of Applied Physics   42 ( Part 1, No. 4B )   1933 - 1936   2003.4

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    DOI: 10.1143/jjap.42.1933

  • Enhancement of bulk nucleation in a-Si1−xGex on SiO2 for low-temperature solid-phase crystallization Reviewed

    T. Sadoh, I. Tsunoda, T. Nagata, A. Kenjo, M. Miyao

    Thin Solid Films   427 ( 1-2 )   96 - 100   2003.3

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    DOI: 10.1016/s0040-6090(02)01255-5

  • Ge-fraction-dependent metal-induced lateral crystallization of amorphous-Si1−xGex (0≦x≦1) on SiO2 Reviewed

    Hiroshi Kanno, Isao Tsunoda, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

    Applied Physics Letters   82 ( 13 )   2148 - 2150   2003.3

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    DOI: 10.1063/1.1564298

  • Low-temperature solid-phase crystallization of a-Si1−xGex on SiO2 by ion-beam stimulation Reviewed

    Isao Tsunoda, Tomohiro Nagata, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

    Materials Science and Engineering: B   89 ( 1-3 )   336 - 340   2002.2

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    DOI: 10.1016/s0921-5107(01)00770-x

  • Influence of Ion Beam Irradiation on Solid-Phase Regrowth of Amorphous Si on SiO2

    I. Tsunoda, T. Nagata, Taizoh Sadoh, A. Kenjo, Masanobu Miyao

    Solid State Phenomena   78-79   345 - 348   2001.4

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    DOI: 10.4028/www.scientific.net/ssp.78-79.345

  • イオン線誘起固相成長法による次世代TFT用多結晶Si薄膜の形成

    角田 功

    九州大学   2001.3

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  • Ion-beam stimulated solid-phase crystallization of amorphous Si on SiO2 Reviewed

    Masanobu Miyao, Isao Tsunoda, Taizoh Sadoh, Atsushi Kenjo

    Thin Solid Films   383 ( 1-2 )   104 - 106   2001.2

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    DOI: 10.1016/s0040-6090(00)01634-5

▼display all

MISC

  • 絶縁基板上における非晶質Ge薄膜の金属誘起横方向成長

    角田功, 高倉健一郎

    電子情報通信学会技術研究報告(Web)   2023.4

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    Metal induced lateral crystallization of amorphous Ge on insulating substrate

  • 非晶質Ge/Mg/SiO2積層構造の固相成長

    森本敦己, 平井杜和, 高細工彩斗, 小嶺龍生, 高倉健一郎, 角田功

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   2023.3

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    Solid phase crystallization of amorphous Ge/Mg/SiO2 stacked structure

  • 非晶質Ge薄膜のMg誘起横方向成長におけるMg拡散量の評価

    森本敦己, 阿部陸斗, 平井杏奈, 平井杜和, 高倉健一郎, 角田功

    電子情報通信学会技術研究報告(Web)   2022.4

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    EDX evaluation of Mg atoms on Mg-induced lateral crystallization of amorphous Ge / SiO2

  • 非晶質Ge/SiO2のMg誘起横方向成長に及ぼすMg拡散の影響

    森本敦己, 阿部陸斗, 平井杏奈, 平井杜和, 高倉健一郎, 角田功

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   2022.3

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    Influence of Mg diffusion on Mg-induced lateral crystallization of amorphous Ge / SiO2

  • 非晶質Ge薄膜のSn誘起横方向成長温度の低温化

    脇島海晴, 郡山大知, 清藤健斗, 笠椋貴, 高倉健一郎, 角田功

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   2021.9

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    Low temperature Sn induced lateral crystallization for amorphous Ge on SiO2

  • 非晶質Ge/SiO2のMg誘起横方向成長

    平井杜和, 阿部陸斗, 本田彬, 森本敦己, 高倉健一郎, 角田功

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   2021.9

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    Mg induced lateral crystallization of amorphous Ge on SiO2

  • Low temperature formation of high-quality crystalline Ge (111) by improving Au-catalyst crystallinity

    Kazuaki Sumi, Noboru Shimizu, Kenichiro Takakura, Isao Tsunoda

    Technical Digest of the 8th Asian Conference on Crystal Growth and Crystal Technology   2021.3

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    Low temperature formation of high-quality crystalline Ge (111) by improving Au-catalyst crystallinity

  • 非晶質Ge/絶縁基板のMg 誘起横方向成長

    阿部陸斗 鍬釣 一 牧 謙太 高倉健一郎 角田 功

    2020年度電子情報通信学会九州支部学生会講演会・講演論文集   2020.9

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  • Ge1−xSnx溶融成長時に生じる偏析現象の理解

    中尾天哉, 西島泰樹, 清水智, 角田功, 中塚理, 黒澤昌志

    第81回応用物理学会秋季学術講演会講演予稿集   2020.9

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  • 非晶質Ge/絶縁基板への電子線照射による Sn 誘起横方向成長の促進

    脇島 海晴, 小川 大輔, 高倉 健一郎, 角田 功

    2020年度電子情報通信学会九州支部学生会講演会・講演論文集   2020.9

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  • Ge1−xSnx細線の偏析溶融成長:冷却速度の影響

    中尾 天哉, 西嶋 泰樹, 清水 智, 角田 功, 中塚 理, 黒澤 昌志

    第67回応用物理学会春季学術講演会 講演予稿集   2020.3

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  • 高照射量電子線による結晶GeSnの成長促進

    脇島海晴、小川大輔、高倉健一郎、角田功

    2019年日本原子力学会九州支部第38回研究発表講演会予稿集   2019.12

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  • 電子線照射したGe薄膜のAu誘起成長挙動の評価

    阿部陸斗, 清水智, 高倉健一郎, 角田功

    2019年日本原子力学会九州支部第38回研究発表講演会予稿集   2019.12

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  • 触媒結晶性変調法を用いた高品質 Ge(111)の低温形成

    角和章, 清水昇, 角田功

    2019年応用物理学会九州支部学術講演会予稿集   2019.11

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  • Effect of sulfurization process on Ag8SnS6 thin films Prepared by Vacuum Evaporation

    Tomohiro Uchimura, Shigeyuki Nakamura, Isao Tsunoda, Hideaki Araki, Tetsuya Okuyama, Satoru Seto, Toshiyuki Yamaguchi, Yoji Akaki

    Proceeding of The 29th International Photovoltaic Science and Engineering Conference   2019.11

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  • Sn誘起成長法を用いた結晶Ge1-xSnx(x≧15&#37;)の低温形成

    小川大輔, 高倉健一郎, 角田功

    2019年応用物理学会九州支部学術講演会予稿集   2019.11

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  • 電子線照射した非晶質Ge/SiO2のAu誘起横方向成長過程の評価

    清水 智, 高倉 健一郎, 角田 功

    第80回応用物理学会秋季学術講演会講演予稿集   2019.9

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  • Au結晶性を変調した非晶質Ge/Au/SiO2積層構造の低温固相成長

    角 和章, 清水 昇, 角田 功

    第80回応用物理学会秋季学術講演会講演予稿集   2019.9

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  • Effects of Sulfurization Process on Ag8SnS6 Thin Films Reviewed

    Tomohiro Uchimura, Shigeyuki Nakamura, Isao Tsunoda, Hideaki Araki, Tetsuya Okuyama, Satoru Seto, Toshiyuki Yamaguchi, Kunihiko Tanaka, Tomoichiro Okamoto, Yoji Akaki

    Abstract of the 4th International Conference on “Science of Technology Innovation” 2019   2019.9

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  • Low Temperature (< 130℃) Formation of Crystalline Ge Film on Insulator by Stress Stimulated GILC Reviewed

    T. Nishijima, K. Kusano, K.Kudo, M. Furuta, Y. Kusuda, S.Motoyama, N. Naka, T, Numata, I. Tsunoda

    Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials   2019.9

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  • Sn誘起横方向成長により低温形成した結晶GeSn/SiO2の評価

    小川 大輔, 高倉 健一郎, 角田 功

    第80回応用物理学会秋季学術講演会講演予稿集   2019.9

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  • イオン注入法を用いた面内組成傾斜n型Si1−xGex細線の形成

    中田 壮哉, 西嶋 大樹, 清水 智, 角田 功, 富田 基裕, 渡邊 孝信, 中塚 理, 黒澤 昌志

    第80回応用物理学会秋季学術講演会講演予稿集   2019.9

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  • 偏析溶融成長法により形成した絶縁膜上 Ge1−xSnx細線の電気特性評価

    中尾 天哉, 西嶋 泰樹, 清水 智, 角田 功, 中塚 理, 黒澤 昌志

    第80回応用物理学会秋季学術講演会講演予稿集   2019.9

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  • 金誘起層交換成長法で作製したGe薄膜における電気伝導特性の理解

    東英実, 笠原健司, 工藤康平, 山田晋也, 金島 岳, 角田 功, 中島 寛, 浜屋宏平

    第66回応用物理学会春季学術講演会 講演予稿集   2019.3

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  • Ge-Au同時蒸着膜を用いた金誘起層交換成長法によるGe結晶の低温形成

    栫 昂輝, 笠原 健司, 清水 昇, 角田 功, 眞砂 卓史

    第66回応用物理学会春季学術講演会 講演予稿集   2019.3

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  • 高エネルギー電子ビームが及ぼす非晶質Ge薄膜の低温成長への影響

    鹿子木, 嘉城, 佐藤 亮起, 西嶋 泰樹, 小川 大輔, 高倉 健一郎, 角田 功

    2018年日本原子力学会九州支部第37回研究発表講演会予稿集   2018.12

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  • Ge-Au同時蒸着膜を用いた金誘起層交換成長の検討

    栫 昂輝, 笠原 健司, 角田 功, 眞砂 卓史

    2018年応用物理学会九州支部学術講演会予稿集   2018.12

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  • Au誘起横方向成長により形成した低温結晶化Ge薄膜の結晶性評価

    西嶋泰樹, 濱崎健, 草野欽太, 高倉健一郎, 角田功

    応用物理学会九州支部学術講演会講演予稿集(Web)   2018.12

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    Au誘起横方向成長により形成した低温結晶化Ge薄膜の結晶性評価

  • 3次元構造により微細化したFinFET、GAAFETへの電子線照射効果

    松木 賢斗, 井芹 健人, 米岡 将士, 角田 功, 高倉 健一郎, Anabela Veloso, ddy Simoen, Cor Claeys

    2018年日本原子力学会九州支部第37回研究発表講演会予稿集   2018.12

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  • Radiation influence on transconductance of n-channel Silicon-on-Insulator GateAll-Around FETs by 2 MeV electron irradiation Reviewed

    Kento Matsuki, Kento Iseri, Kenichiro Takakura, Masashi Yoneoka, Isao Tsunoda, Anabela Veloso, Eddy Simoen, Cor Claeys

    Abstract of the 8th Forum on the Science and Technology of Silicon Materials 2018   2018.11

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  • Crystallinity evaluation of Si-doped Ga2O3 thin film growth on Al2O3 (0001) substrate by RF magnetron sputtering Reviewed

    Naoya Aida, Hiroki Ishimoto, Isao Tsunoda, Kenichiro Takakura

    Abstract of the 8th Forum on the Science and Technology of Silicon Materials 2018   2018.11

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  • Low temperature formation of Ge (111)/Au/SiO2 by two step annealing Reviewed

    N. Shimizu, T. Mori, K. Takakura, I. Tsunoda

    Abstract of the 37th Electronic Materials Symposium   2018.10

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  • Evaluation of Au concentration for Au induced lateral crystallized Ge on insulating substrate Reviewed

    T. Hamasaki, T. Sakai, K. Takakura, I. Tsunoda

    Abstract of the 37th Electronic Materials Symposium   2018.10

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  • Electron irradiation effect on Sn induced lateral crystallization for amorphous Ge on insulating substrate Reviewed

    H. Kanakogi, T. Nishijima, K. Takakura, I. Tsunoda

    Abstract of the 37th Electronic Materials Symposium   2018.10

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  • 非晶質Ge/SiO2のSn誘起横方向低温(≦200°C)固相成長

    鹿子木嘉城, 佐藤亮起, 西嶋泰樹, 小川大輔, 高倉健一郎, 角田功

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   2018.9

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    非晶質Ge/SiO2のSn誘起横方向低温(≦200°C)固相成長

  • 溶融成長法によるGe1-xSnx細線の形成と電気特性評価

    高橋 恒太, 今井 祐太, 西嶋 泰樹, 清水 智, 黒澤 昌志, 角田 功, 中塚 理, 財満 鎭明

    第79回応用物理学会秋季学術講演会講演予稿集   2018.9

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  • 熱電特性評価に向けた組成傾斜SixGe1-x細線の形成

    中田 壮哉, 高橋 恒太, 西嶋 泰樹, 清水 智, 角田 功, 中塚 理, 財満 鎭明, 渡邉 孝信, 黒澤 昌志

    第79回応用物理学会秋季学術講演会講演予稿集   2018.9

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  • Au誘起横方向成長した結晶Ge内のAu濃度評価

    濱崎健, 坂井拓也, 角和章, 高倉健一郎, 角田功

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   2018.9

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    Au誘起横方向成長した結晶Ge内のAu濃度評価

  • Low Temperature Growth of Group-IV Semiconductors on Insulator for Advanced Flexible Electronics Reviewed

    Taizoh Sadoh, Masanobu Miyao, Isao Tsunoda

    Abstract of the 18th International Meeting on Information Display   2018.8

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  • Flexible thin-film transistors with crystalline germanium layers Reviewed

    H. Higashi, K. Kudo, S. Yamada, T. Kanashima, I. Tsunoda, H. Nakashima, K.Hamaya

    Abstract of the 1st Joint ISTDM / ICSI 2018 Conference   2018.5

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  • 正しい歩行姿勢とO脚改善が腰痛軽減につながる歩行訓練システムの開発

    上杉一秀, 足達義則, 新谷洋人, 合志和洋, 角田功, 清田公保

    Journal of International Society of Life Information Science   2018.3

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    正しい歩行姿勢とO脚改善が腰痛軽減につながる歩行訓練システムの開発

  • 2段階熱処理による結晶Ge/Au/SiO2積層構造の低温形成

    清水昇, 森貴礼, 岡本健人, 坂井拓也, 高倉健一郎, 角田功

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   2018.3

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    2段階熱処理による結晶Ge/Au/SiO2積層構造の低温形成

  • Low-Temperature Crystallization of Group-IV Semiconductors on Insulator Using Catalysis Reviewed

    Taizoh Sadoh, M. Miyao, I. Tsunoda

    Abstract ot the 11th International WorkShop on New Group IV Semiconductor Nanoelectronics   2018.2

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  • Four-quadrant silicon and silicon carbide photodiodes for beam position monitor applications: Electrical characterization and electron irradiation effects

    J. M. Rafí, G. Pellegrini, P. Godignon, D. Quirion, S. Hidalgo, O. Matilla, A. Fontserè, B. Molas, K. Takakura, I. Tsunoda, M. Yoneoka, D. Pothin, P. Fajardo

    Journal of Instrumentation   2018.1

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    Silicon photodiodes are very useful devices as X-ray beam monitors in synchrotron radiation beamlines, as well as other astronomy and space applications. Owing to their lower susceptibility to variable temperature and illumination conditions, there is also special interest in silicon carbide devices for some of these applications. Moreover, radiation hardness of the involved technologies is a major concern for high-energy physics and space applications. This work presents four-quadrant photodiodes produced on ultrathin (10 μm) and bulk Si, as well as on SiC epilayer substrates. An extensive electrical characterization has been carried out by using current-voltage (I-V) and capacitance-voltage (C-V) techniques. The impact of different temperature (from -50C to 175C) and visible light conditions on the electrical characteristics of the devices has been evaluated. Radiation effects caused by 2 MeV electron irradiation up to 1×1014, 1×1015 and 1×1016 e/cm2 fluences have been studied. Special attention has been devoted to the study of charge build-up in diode interquadrant isolation, as well as its impact on interquadrant resistance. The study of these electrical properties and its radiation-induced degradation should be taken into account for device applications.

    DOI: 10.1088/1748-0221/13/01/C01045

  • 非晶質Ge薄膜のAu誘起成長に及ぼすAu結晶性の影響

    森貴礼, 岡本健人, 清水昇, 坂井拓也, 高倉健一郎, 角田功

    応用物理学会九州支部学術講演会講演予稿集(Web)   2017.12

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    非晶質Ge薄膜のAu誘起成長に及ぼすAu結晶性の影響

  • 絶縁基板上における非晶質Ge薄膜のSn誘起横方向成長

    佐藤亮起, 城土卓巳, 井芹健人, 坂井拓也, 高倉健一郎, 角田功

    応用物理学会九州支部学術講演会講演予稿集(Web)   2017.12

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    絶縁基板上における非晶質Ge薄膜のSn誘起横方向成長

  • Influence of Au film thickness on Au induced lateral crystallization for amorphous Ge on insulating substrate Reviewed

    T. Sakai, K. Kusano, Y. Sato, K. Takakura, I. Tsunoda

    Abstract of the 36th Electronic Materials Symposium   2017.11

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  • Catalyst dependence of metal induced lateral crystallization (MILC) for amorphous Ge on insulator Reviewed

    Y. Sato, T. Sakai, K. Takakura, I. Tsunoda

    Abstract of the 36th Electronic Materials Symposium   2017.11

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  • 触媒成長法を用いたIV族半導体/絶縁膜の低温形成 - 高性能フレキシブル・エレクトロニクスの創出を目指して -

    佐道 泰造, 宮尾 正信, 角田 功

    第78回応用物理学会秋季学術講演会講演予稿集   2017.9

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  • Four-quadrant Silicon and Silicon Carbide Photodiodes for Beam Position Monitor Application: Electrical Characterization and Electron Irradiation Effects Reviewed

    Joan Marc Rafí, Giulio Pellegrini, Philippe Godignon, David Quirion, Salvador Hidalgo, Oscar Matilla, Abel Fontserè, Bernat Molas, Kenichiro Takakura, Isao Tsunoda, Masashi Yoneoka, Daniel Pothin, Pablo Fajardo

    Abstract of the 11th International Conference on Position Sensitive Detectors   2017.9

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  • Study of degradation mechanism by isothermal annealing of SOI FinFET after electron irradiation Reviewed

    Kento Matsuki, Mitsunari Matsuzaki, Masashi Yoneoka, Isao Tsunoda, Kenichiro Takakura, Eddy Simoen, Anabela Veloso, Cor Claeys

    Abstract of the 29th International Conference on Defects in Semiconductors   2017.7

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  • Radiation influence on the electrical properties of n-channel SOI GAAFETs by 2 MeV electron irra- diation Reviewed

    Kento Iseri, Kenichiro Takakura, Masashi Yoneoka, Yuto Yonemoto, Isao Tsunoda, Eddy Simoen, Anabela Veloso, Cor Claeys

    Abstract of the 29th International Conference on Defects in Semiconductors   2017.7

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  • 非晶質Ge薄膜/絶縁基板のAu誘起横方向成長に及ぼすAu膜厚効果

    坂井 拓也,草野 欽太,高倉 健一郎,角田 功

    第64回応用物理学会春季学術講演会 講演予稿集   2017.3

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  • 非晶質Si0.2Ge0.8薄膜のAu誘起成長に及ぼす触媒金属の結晶性変調効果

    角田 功

    第8回半導体材料デバイスフォーラム予稿集   2016.11

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  • TEOS内在応力を利用した非晶質Ge薄膜のAu誘起成長(3)

    角田 功

    第8回半導体材料デバイスフォーラム予稿集   2016.11

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  • 絶縁基板上における非晶質Ge薄膜のAu誘起固相成長過程のその場観察

    角田 功

    第8回半導体材料デバイスフォーラム予稿集   2016.11

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  • 絶縁基板上の非晶質Ge薄膜の金属誘起成長 ~金属種依存性~

    角田 功

    第8回半導体材料デバイスフォーラム予稿集   2016.11

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  • Thermoelectric Properties of Ge-Rich GeSn Films Grown on Insulators

    角田 功

    PRiME 2016/230th ECS Meeting, Extended Abstract #2030.(口頭発表)   2016.10

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  • 絶縁膜上に形成したp型poly-GeSn薄膜の熱電特性評価

    角田 功

    第77回応用物理学会秋季学術講演会講演予稿集 p.13-307   2016.9

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  • 結晶性 Ge を用いたフレキシブル薄膜トランジスタの実証

    角田 功

    第77回応用物理学会秋季学術講演会講演予稿集 p.12-207   2016.9

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  • Study of mobility enhancement by stresses at the channel of Gate-All-Around nMOSFETs

    角田 功

    35th Electron Materials Symposium, pp. 213-214.(ポスター発表)   2016.7

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  • Au thickness dependent solid phase crystallization of amorphous Ge on insulating substrate by catalytic Au insertion

    角田 功

    35th Electronic Materials Symposium Extended abstract pp.167-168.(ポスター発表)   2016.7

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  • Enhancement of solid-phase crystallization of amorphous Ge on insulating substrate by electron stimulated nucleation

    角田 功

    35th Electronic Materials Symposium Extended abstract pp.171-172.(ポスター発表)   2016.7

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  • Low temperature (<150℃) formation of crystalline Ge on insulating substrate by stress stimulated crystallization

    角田 功

    Asia-Pacific Conference on Semiconducting Silicides and Related Materials (APAC-Silicide) 2016 Extended Abstract 17-P29.(ポスター発表)   2016.7

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  • Stress Stimulation Effect on Au Induced Lateral Crystallization for Amorphous Ge on Insulating Substrate

    角田 功

    7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting 2016 (ISTDM2016) Extended Abstract pp.22-23.(口頭発表)   2016.6

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  • Preferentially (111) Oriented Crystalline Ge by Low Temperature (~200℃) Au Induced Solid Phase Crystallization

    角田 功

    7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting 2016 (ISTDM2016) Extended Abstract pp.203-204.(ポスター発表)   2016.6

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  • 非熱的エネルギーを用いた非晶質Ge / SiO2の低温固相成長

    角田 功

    電子情報通信学会エレクトロニクスソサイエティ シリコン材料・デバイス(SDM), 研究会信学技報, Vol. 116, No.1, pp.31-34   2016.4

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  • 非熱的エネルギーを用いた非晶質Ge / SiO2の低温固相成長

    角田 功

    信学技報, Vol. 116, No.1, pp.31-34   2016.4

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  • 非晶質SixGe1-x/SiO2のAu誘起成長に及ぼす圧縮応力の影響

    角田 功

    第63回応用物理学会春季学術講演会講演予稿集 p.12-077   2016.3

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  • SiO2/Au/a-Ge/SiO2積層構造の固相結晶化に及ぼす熱処理温度の影響

    角田 功

    第6回電気学会九州支部高専研究講演会予稿集C13, pp.93-94   2016.3

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  • a-Ge/Au/SiO2積層構造の低温固相結晶化に及ぼすGe/Au 膜厚比の影響

    角田 功

    第6回電気学会九州支部高専研究講演会予稿集C14, pp.95-96   2016.3

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  • 非晶質Ge薄膜の固相成長に及ぼす電子線照射による影響

    角田 功

    平成27年度応用物理学会九州支部学術講演会   2015.12

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  • 絶縁膜上における非晶質Ge細線へのAu誘起成長

    角田 功

    平成27年度応用物理学会九州支部学術講演会   2015.12

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  • 金属触媒を用いたa-GeSn/絶縁膜基板の極低温(~150℃)横方向成長

    角田 功

    平成27年度応用物理学会九州支部学術講演会   2015.12

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  • Investigation of β-gallium oxide phase transition tempertature on sapphire substrates

    角田 功

    HANU-KO_SEN Joint conference on Global Network in a Cross-Sultural Environment 2015 (HKJC 2015).(ポスター発表)   2015.12

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  • Au誘起成長法による(111)高配向Ge薄膜の低温形成

    角田 功

    平成27年度応用物理学会九州支部学術講演会   2015.12

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  • フレキシブルエレクトロニクスの実現に向けたGe(Sn)/絶縁基板の極低温金属誘起成長

    角田 功

    第7回半導体材料デバイスフォーラム   2015.11

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  • 電子線照射a-Ge/SiO2のAu誘起成長(3)

    角田 功

    第7回半導体材料デバイスフォーラム   2015.11

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  • 高配向(111)Ge結晶の200℃以下形成

    角田 功

    第7回半導体材料デバイスフォーラム   2015.11

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  • 熱処理により作製したβ-Ga2O3/Al2O3の結晶性評価

    角田 功

    第7回半導体材料デバイスフォーラム   2015.11

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  • Investigation of crystal orientation of β-Ga2O3 thin film grown on sapphire substrate by room temperature deposition and subsequent annealing

    角田 功

    International Workshop on Gallium Oxide and Related Materials 2015.(ポスター発表)   2015.11

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  • Study of the Thermal Recovery for Si:C S/D n-MOSFETs

    角田 功

    The 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (11th RASEDA).(ポスター発表)   2015.11

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  • TEOS内部応力を利用した非晶質Ge薄膜のAu誘起成長(2)

    角田 功

    第7回半導体材料デバイスフォーラム   2015.11

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  • Thermal Recovery of radiation damaged Si:C S/D n-MOSFETs

    角田 功

    第7回半導体材料デバイスフォーラム   2015.11

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  • 非晶質Ge薄膜のAu誘起成長に及ぼす熱処理温度の影響(2)-Au膜厚依存性-

    角田 功

    第76回応用物理学会秋季学術講演会講演予稿集 p.13-023   2015.9

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  • Enhancement of Au Induced Lateral Crystallization in Electron Irradiated Amorphous Ge on SiO2

    角田 功

    2015 International Conference on Solid State Devices and Materials (SSDM2015) Extended abstract pp.904-905, Sapporo (Japan).(口頭発表)   2015.9

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  • Au induced low temperature formation of (111) preferential oriented crystalline Ge on insulator

    角田 功

    2015 International Conference on Solid State Devices and Materials (SSDM2015) Extended abstract pp.902-903, Sapporo (Japan).   2015.9

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  • Au induced low temperature formation of (111) preferential oriented crystalline Ge on insulator

    角田 功

    2015 International Conference on Solid State Devices and Materials (SSDM2015) Extended abstract pp.902-903, Sapporo (Japan).(口頭発表)   2015.9

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  • Enhancement of Au Induced Lateral Crystallization in Electron Irradiated Amorphous Ge on SiO2

    角田 功

    2015 International Conference on Solid State Devices and Materials (SSDM2015) Extended abstract pp.904-905, Sapporo (Japan).   2015.9

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  • Radiation hardness of electrical properties of n-channel UTBOX SOI MOSFETs by 2 MeV electron irradiation

    角田 功

    28th International Conference on Defects in Semiconductors (ICDS 2015).(ポスター発表)   2015.7

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  • (111) oriented crystal Ge on insulator by low temperature (~ 200 ºC) gold induced crystallization

    角田 功

    34th Electronic Materials Symposium Extended abstract pp.77-78, Shiga (Japan).(ポスター発表)   2015.7

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  • A study on the influence of BOX layer for SOI FinFETs by electron irradiation

    角田 功

    34th Electronic Materials Symposium Extended abstract pp.279-280, Shiga (Japan).(ポスター発表)   2015.7

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  • Amorphicity modulation effect on Au induced lateral crystallization for amorphous Ge on SiO2

    角田 功

    34th Electronic Materials Symposium Extended abstract pp.73-74, Shiga (Japan).(ポスター発表)   2015.7

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  • Au induced lateral crystallization for stressed amorphous Ge on insulating substrate

    角田 功

    34th Electronic Materials Symposium Extended abstract pp.75-76, Shiga (Japan).(ポスター発表)   2015.7

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  • Comparative evaluation of radiation characteristics of Si MOSFETs with C and Ge addition in S/D

    角田 功

    34th Electronic Materials Symposium Extended abstract pp.281-282, Shiga (Japan).(ポスター発表)   2015.7

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  • Investigation of the electrical properties of carbon doped Si0.75Ge0.25/Si hetero junction diodes by 2 MeV electron irradiation

    角田 功

    29th International Conference on Defects in Semiconductors (ICDS 2015).(ポスター発表)   2015.7

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  • Investigation of the radiation tolerance of carbon doped Si0.25Ge0.75/Si hetero junction diode by 2 MeV electrons

    角田 功

    34th Electronic Materials Symposium Extended abstract pp.277-278, Shiga (Japan).(ポスター発表)   2015.7

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  • Investigation of the radiation tolerance of carbon doped Si0.25Ge0.75/Si hetero junction diode by 2 MeV electrons

    角田 功

    34th Electronic Materials Symposium Extended abstract pp.283-284, Shiga (Japan).(ポスター発表)   2015.7

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  • 面方位制御した結晶Ge薄膜の極低温誘起成長

    角田 功

    電子情報通信学会エレクトロニクスソサイエティ シリコン材料・デバイス(SDM)研究会   2015.4

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    Low temperature formation of (111) orientated crystalline Ge/Au/insulator stacked structure

  • 非晶質Ge薄膜のAu誘起成長に及ぼすTEOS-SiO2キャップ層の影響

    角田 功

    信学技報 Vol. 115, No.18, pp.41-44.   2015.4

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  • 非晶質Ge薄膜のAu誘起成長に及ぼすTEOS-SiO2キャップ層の影響

    角田 功

    電子情報通信学会エレクトロニクスソサイエティ シリコン材料・デバイス(SDM)研究会   2015.4

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  • 面方位制御した結晶Ge薄膜の極低温誘起成長

    角田 功

    信学技報 Vol. 115, No.18, pp.45-48.   2015.4

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  • 非晶質Ge薄膜のAu誘起成長に及ぼす熱処理温度の影響

    角田 功

    第62回応用物理学会春季学術講演会   2015.3

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  • 非晶質Ge/Au/SiO2積層構造の低温固相成長

    角田 功

    平成26年度電気学会九州支部高専研究講演会   2015.3

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  • 非晶質Ge/SiO2/Siの電子線照射固相成長

    角田 功

    平成26年度電気学会九州支部高専研究講演会   2015.3

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  • 圧縮応力を印加した非晶質Ge薄膜のAu誘起成長

    角田 功

    第62回応用物理学会春季学術講演会   2015.3

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  • ストレスMIC法による結晶Ge/絶縁基板の極低温形成

    角田 功

    平成26年度電気学会九州支部高専研究講演会   2015.3

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  • フレキシブル基板上への擬似単結晶Ge薄膜の形成

    角田 功

    第62回応用物理学会春季学術講演会   2015.3

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  • 非晶質Ge薄膜のAu誘起低温成長による面方位制御

    角田 功

    平成26年度応用物理学会九州支部学術講演会   2014.12

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  • TEOS内部応力を利用した非晶質Ge薄膜のAu誘起成長

    角田 功

    第6回半導体材料・デバイスフォーラム   2014.12

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  • 低温でAu誘起成長させた結晶Ge薄膜の評価

    角田 功

    第6回半導体材料・デバイスフォーラム   2014.12

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  • 応力印加成長法による非晶質Ge薄膜の極低温(~150℃)成長

    角田 功

    平成26年度応用物理学会九州支部学術講演会   2014.12

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  • 絶縁膜上における非晶質Ge薄膜の【電子線+金属触媒】誘起成長

    角田 功

    平成26年度応用物理学会九州支部学術講演会   2014.12

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  • 線幅を変調させたGe薄膜のAu誘起横方向成長

    角田 功

    第6回半導体材料・デバイスフォーラム   2014.12

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  • 金誘起層交換成長法を用いた擬似単結晶Ge薄膜の形成

    角田 功

    第6回半導体材料・デバイスフォーラム   2014.12

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  • 電子線照射a-Ge/SiO2のAu誘起成長(2)-加速エネルギー依存性-

    角田 功

    第6回半導体材料・デバイスフォーラム   2014.12

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  • 電子線照射非晶質Ge薄膜の熱的固相成長

    角田 功

    第6回半導体材料・デバイスフォーラム   2014.12

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  • 非晶質 Ge/SiO2の Au 誘起横方向成長に及ぼす電子線照射効果

    角田 功

    第75回応用物理学会秋季学術講演会   2014.9

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  • ラマン分光による電子線照射非晶質 Ge 薄膜の固相成長過程の評価

    角田 功

    第75回応用物理学会秋季学術講演会   2014.9

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  • 初期非晶質性を変調した Ge 薄膜の Au 誘起成長

    角田 功

    第75回応用物理学会秋季学術講演会   2014.9

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  • 電子線照射した Si0.99C0.01 S/D n-MOSFET に及ぼす熱処理の影響

    角田 功

    第75回応用物理学会秋季学術講演会   2014.9

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  • 非晶質 Ge/SiO2の Au 誘起横方向成長に及ぼす応力印加効果

    角田 功

    第75回応用物理学会秋季学術講演会   2014.9

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  • ゲルマニウム層つき基板の製造方法及びゲルマニウム層付き基板

    角田 功

    特許出願   2014.7

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  • Effect of surface roughness for Au induced lateral crystal growth in amorphous Ge

    角田 功

    33th Electronic Materials Symposium (EMS-33), Extended abstracts of 33th Electronic Materials Symposium, pp.99-100, Izu (Japan).(ポスター発表)   2014.7

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  • Evaluation of crystal structure and optical properties of β-Ga2O3 as-deposited and after annealed.

    角田 功

    33th Electronic Materials Symposium (EMS-33), Extended abstracts of 33th Electronic Materials Symposium, pp.41-44, Izu (Japan).(ポスター発表)   2014.7

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  • Evaluation of the mobility degradation by electron irradiation of Si1-xGex S/D p-MOSFETs at higher Ge concentration

    角田 功

    33th Electronic Materials Symposium (EMS-33), Extended abstracts of 33th Electronic Materials Symposium, pp.25-29, Izu (Japan).(ポスター発表)   2014.7

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  • Influence of electron beam irradiation for Au induced lateral crystallization in a-Ge on SiO2

    角田 功

    33th Electronic Materials Symposium (EMS-33), Extended abstracts of 33th Electronic Materials Symposium, pp.101-102, Izu (Japan).(ポスター発表)   2014.7

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  • Investigation of relationships between film thickness and optical absorption coefficient of β-Ga2O3 film

    角田 功

    33th Electronic Materials Symposium (EMS-33), Extended abstracts of 33th Electronic Materials Symposium, pp.45-46, Izu (Japan).(ポスター発表)   2014.7

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  • 非晶質Ge薄膜のAu誘起成長に及ぼす電子線照射の影響

    角田 功

    信学技報, vol.114, no.1, SDM2014-5, pp.21-25.   2014.4

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    Influence of electron irradiation on Au-induced crystallization for amorphous Ge/SiO_2-substrate
    Au-induced crystallization for amorphous Ge (a-Ge) thin film on insulator is investigated as low-temperature crystallization method. However, low-temperature crystallization is required long annealing time (~a few hours) in this method. To reduce the annealing time for crystallization, we have examined the electron irradiation effect of Au-induced crystallization for a-Ge/SiO_2. As a result, the annealing time for crystallization is reduced to 1/2 by electron irradiation. In addition, the lateral crystallization region has high crystalline quality. These results suggest that Au-induced crystallization for a-Ge/SiO_2 is enhanced by electron irradiation.

  • 非晶質Ge薄膜のAu誘起成長に及ぼす電子線照射の影響

    角田 功

    信学技報, vol.114, no.1, SDM2014-5, pp.21-25.   2014.4

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    Influence of electron irradiation on Au-induced crystallization for amorphous Ge/SiO_2-substrate
    Au-induced crystallization for amorphous Ge (a-Ge) thin film on insulator is investigated as low-temperature crystallization method. However, low-temperature crystallization is required long annealing time (~a few hours) in this method. To reduce the annealing time for crystallization, we have examined the electron irradiation effect of Au-induced crystallization for a-Ge/SiO_2. As a result, the annealing time for crystallization is reduced to 1/2 by electron irradiation. In addition, the lateral crystallization region has high crystalline quality. These results suggest that Au-induced crystallization for a-Ge/SiO_2 is enhanced by electron irradiation.

  • 非晶質Ge薄膜のAl誘起層交換成長に及ぼすプリアニールの影響

    角田 功

    電気学会九州支部平成25年度(第4回)高専卒業発表会予稿集、pp.13-14   2014.3

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  • 初期非晶質性を変調した非晶質Ge薄膜のAu誘起横方向成長

    角田 功

    電気学会九州支部平成25年度(第4回)高専卒業発表会予稿集、pp.15-16   2014.3

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  • Evaluation of Degradation due to Electron Irradiation of Si1-xCx S/D n-type MOSFETs

    Masato Hori, Yuki Asai, Masashi Yoneoka, Isao Tsunoda, Kenichiro Takakura, Toshiyuki Nakashima, Mireia B. Gonzalez, Eddy Simoen, Cor Claeys

    Materials Science Forum   2014.2

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    To solve the problem of the limitation to improve device performance in standard Si integration technologies and to develop radiation-harsh devices, the irradiation effects of Si1-xCx source/drain (S/D) n-type metal oxide semiconductor field effect transistors (n-MOSFETs) have been investigated. It is shown that the drain current and the maximum electron mobility of Si1-xCx n-MOSFETs decrease by electron irradiation. The reduction of the device performance can be explained by the radiation-induced lattice defects in the devices. However, the electron mobility enhancement effect by adding C remained after an electron irradiation up to 5×1017 e/cm2.

    DOI: 10.4028/www.scientific.net/msf.778-780.1197

  • Effect of post-deposition annealing on structural and optical properties of RF magnetron sputtered β−Ga2O3 films

    R. Aida, K. Minami, K. Ishibashi, J. Kudou, M. Takahara, I. Tsunoda, K. Takakura, T. Nakashima, M. Shibuya, K. Murakami

    AIP Conference Proceedings   2014.2

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    DOI: 10.1063/1.4865671

  • 非晶質Ge / Al / SiO2の層交換成長に及ぼすAl層焼き締めの効果

    角田 功

    第5回半導体材料・デバイスフォーラム予稿集、P-26   2013.11

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  • 非晶質Ge / Al / SiO2の層交換成長に及ぼすAl薄膜焼き締めの効果

    角田 功

    平成25年度応用物理学会九州支部学術講演会   2013.11

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  • ゲート長の異なるSi1-xCx S/D n-MOSFETsに及ぼす電子線照射効果

    角田 功

    第5回半導体材料・デバイスフォーラム予稿集、P-25   2013.11

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  • 凹凸基板上における非晶質Ge薄膜のAu誘起固相成長

    角田 功

    平成25年度応用物理学会九州支部学術講演会   2013.11

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  • 商用NANDゲートの電子線照射による影響

    角田 功

    第5回半導体材料・デバイスフォーラム予稿集、P-23   2013.11

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  • 多元同時スパッタによる作製した非晶質SiGe薄膜の熱的固相成長

    角田 功

    第5回半導体材料・デバイスフォーラム予稿集、P-27   2013.11

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  • 成膜後熱処理がb-Ga2O3薄膜の構造及び光学的特性に及ぼす影響

    角田 功

    第5回半導体材料・デバイスフォーラム予稿集、P-22   2013.11

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  • 膜厚の変化がGa2O3薄膜の結晶性に及ぼす影響

    角田 功

    第5回半導体材料・デバイスフォーラム予稿集、P-21   2013.11

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  • 表面凹凸上におけるa-GeのAu誘起成長

    角田 功

    第5回半導体材料・デバイスフォーラム予稿集、P-28   2013.11

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  • 酸化膜上に作製したペンタセン薄膜の結晶性評価

    角田 功

    第5回半導体材料・デバイスフォーラム予稿集、P-29   2013.11

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  • 電子線照射a-Ge/SiO2のAu誘起成長

    角田 功

    第5回半導体材料・デバイスフォーラム予稿集、O-13   2013.11

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  • 電子線照射したSi0.75Ge0.25/Siダイオードのラマン分光法によるひずみ解析

    中島敏之, 米岡将士, 角田功, 高倉健一郎, 大山英典, 中庸行, E. Simoen, C. Claeys, 吉野賢二

    宮崎大学工学部紀要   2013.11

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  • 電子線照射による非晶質Ge薄膜のAu誘起成長の促進

    角田 功

    第74回応用物理学会秋季学術講演会   2013.9

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  • 2MeV電子線を照射したひずみSi/ひずみ緩和Si0.7Ge0.3/Si基板構造のラマン分光法によるひずみ量評価

    角田 功

    第74回応用物理学会秋季学術講演会   2013.9

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  • 電子線照射したSi0.75Ge0.25/Siダイオードのラマン分光法によるひずみ解析

    中島 敏之, 米岡 将士, 角田 功, 高倉 健一郎, 大山 英典, 中 庸行, Simoen Eddy, Claeys Cor, 吉野 賢二

    宮崎大學工學部紀要   2013.8

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    Stress Analysis of the Electron Irradiated Si0.75Ge0.25/Si Diode by Raman Spectroscopy

  • Radiation tolerance of Si1-yCy source/drain n-type metal oxide semiconductor field effect transistors with different carbon concentration

    角田 功

    8th International Conference on Si Epitaxy and Heterostructures(ICSI-8), P1-20, Fukuoka(JAPAN). (ポスター発表)   2013.6

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  • Enhanced Au induced lateral crystallization in electron-irradiated amorphous Ge on SiO2

    角田 功

    8th International Conference on Si Epitaxy and Heterostructures(ICSI-8), P1-12, Fukuoka(JAPAN). (ポスター発表)   2013.6

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  • プロトン照射したCIGS太陽電池のインピーダンス特性

    角田 功

    第60回応用物理学会春季学術講演会   2013.3

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  • 非晶質Ge薄膜のAu誘起結晶成長に及ぼす下地基板の影響

    角田 功

    第27回熊本県産学官技術交流会   2013.1

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  • Ge無添加Si及びGe微量添加Siダイオードの耐放射線性の違い

    角田 功

    第27回熊本県産学官技術交流会   2013.1

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  • ローカルひずみを印加したpMOSFETの電子線耐性評価

    角田 功

    第27回熊本県産学官技術交流会   2013.1

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  • 基板温度変化がGa2O3の結晶性に及ぼす影響

    角田 功

    第27回熊本県産学官技術交流会   2013.1

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  • 電子線照射Si0.75Ge0.25/Siヘテロ接合ダイオードの局所応力発生

    角田 功

    第27回熊本県産学官技術交流会   2013.1

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  • 電子線照射前後のSi1-XCX S/D n-MOSFETの特性評価

    角田 功

    第27回熊本県産学官技術交流会   2013.1

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  • 高温熱処理によるGa2O3結晶性向上

    角田 功

    平成24年度応用物理学会九州支部学術講演会、p. 51   2012.12

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  • Difference of radiation tolerance with p- and n-type JFETs

    角田 功

    The 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (10th-RASEDA), Tsukuba, Ibaraki (Japan). (ポスター発表)   2012.12

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  • Ge濃度の異なるSi1-xGex S/D pMOSFETに及ぼす電子線照射の影響

    角田 功

    平成24年度応用物理学会九州支部学術講演会、p. 74   2012.12

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  • Radiation damage of Si1-yCy Source/Drain n-MOSFETs with different carbon concentrations

    角田 功

    The 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (10th-RASEDA), Tsukuba, Ibaraki (Japan). (ポスター発表)   2012.12

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  • スパッタリング法により成膜したGa2O3薄膜の結晶性評価

    石橋和也, 合田稜平, 工藤淳, 高原基, 中島敏之, 渋谷睦夫, 村上克也, 角田功, 高倉健一郎

    応用物理学会九州支部学術講演会講演予稿集   2012.12

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    スパッタリング法により成膜したGa2O3薄膜の結晶性評価

  • スパッタ法により成膜したGa2O3薄膜の結晶性評価

    角田 功

    第4回半導体材料・デバイスフォーラム予稿集、pp.113-114   2012.11

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  • 高温熱処理がGa2O3薄膜に及ぼす影響

    角田 功

    第4回半導体材料・デバイスフォーラム予稿集、pp.63-64   2012.11

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  • Cを添加したSiGe/Siヘテロ接合ダイオードの電子線耐性評価

    角田 功

    第4回半導体材料・デバイスフォーラム予稿集、pp.127-128   2012.11

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  • MIC法を用いた非晶質Ge薄膜の低温結晶成長

    角田 功

    第4回半導体材料・デバイスフォーラム予稿集、pp.121-122   2012.11

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  • Si1-XCX S/D n-MOSFETに与える電子線照射効果

    角田 功

    第4回半導体材料・デバイスフォーラム予稿集、pp.117-118   2012.11

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  • Si1-xGex S/D p-MOSFETへの電子線照射による電気的特性への影響の評価

    中島敏之, 出本竜也, 米岡将士, 角田功, 高倉健一郎, 大山英典, E. Simoen, C. Claeys, 吉野賢二

    宮崎大学工学部紀要   2012.11

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  • β-Ga2O3薄膜のバンド構造解析と光学特性

    角田 功

    第4回半導体材料・デバイスフォーラム予稿集、pp.123-124   2012.11

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  • 周囲長の異なるGeダイオードの耐放射線特性に関する評価

    角田 功

    第4回半導体材料・デバイスフォーラム予稿集、pp.125-126   2012.11

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  • 基板加熱スパッタにより作製したGa2O3薄膜の評価

    角田 功

    第4回半導体材料・デバイスフォーラム予稿集、pp.133-134   2012.11

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  • 微量のGe添加がSiダイオードの放射線耐性に与える影響―照射導入欠陥のGe濃度依存性―

    角田 功

    第4回半導体材料・デバイスフォーラム予稿集、pp.131-132   2012.11

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  • 電子線照射SiGe/SiダイオードのRaman分光による歪み量評価

    角田 功

    第4回半導体材料・デバイスフォーラム予稿集、pp.115-116   2012.11

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  • 電子線照射した民生用積層セラミックコンデンサの特性変化

    角田 功

    第4回半導体材料・デバイスフォーラム予稿集、pp.129-130   2012.11

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  • 電子線照射した商用JFETの電流変動解析

    角田 功

    第4回半導体材料・デバイスフォーラム予稿集、pp.119-120   2012.11

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  • 電子線照射したSi1-xGex S/D pMOSFETのGe濃度依存性評価

    角田 功

    第4回半導体材料・デバイスフォーラム予稿集、pp.65-66   2012.11

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  • 電子線・陽子線照射によるCIGS太陽電池への影響

    角田 功

    第7回高崎量子応用研究シンポジウム, p.44   2012.10

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  • Ge濃度の異なるSi1-xGex S/D pMOSFETに及ぼす電子線照射の影響

    角田 功

    平成24年度応用物理学会九州支部学術講演会、p. 74   2012.10

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  • 商用JFETの電子線損傷

    角田 功

    2012年秋季第73回応用物理学会学術講演会、講演予稿集 p.13-021   2012.9

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  • 高温熱処理によるGa2O3 結晶性向上

    角田 功

    2012年秋季第73回応用物理学会学術講演会、講演予稿集 p.14-036   2012.9

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  • C を少量添加したSi MOSFET に与える電子線照射の影響

    角田 功

    2012年秋季第73回応用物理学会学術講演会、講演予稿集 p.13-022   2012.9

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  • Effect of high temperateure annealing on the surface structure of β-Ga2O3

    角田 功

    International Union of Materials Research Societies - International Conference on Electronic Materials 2012 (IUMRS-ICEM 2012), Abstracts of IUMRS-ICEM 2012, B-5-P25-010, Yokohama (Japan). (ポスター発表)   2012.9

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  • 民生用積層セラミックコンデンサの電子線照射損傷

    角田 功

    2012年秋季第73回応用物理学会学術講演会、講演予稿集 p.09-007   2012.9

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  • 2MeV の電子線を照射したSi0.75Ge0.25 / Si ダイオードの歪み量評価

    角田 功

    2012年秋季第73回応用物理学会学術講演会、講演予稿集 p.13-012   2012.9

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  • Ge content dependence of radiation damage in Si1-xGex S/D p-MOSFETs

    角田 功

    18th International Conference on Ternary and Multinary Compounds, Salzburug, Austria.(ポスター発表)   2012.8

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  • Degradation effects of proton and electron irradiation for Cu(In,Ga)Se2 solar cells

    角田 功

    18th International Conference on Ternary and Multinary Compounds, Salzburug, Austria.(ポスター発表)   2012.8

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  • Local compressive stress generation in electron irradiated boron‐doped Si0.75Ge0.25/Si devices

    Isao Tsunoda, Toshiyuki Nakashima, Nobuyuki Naka, Tatsuya Idemoto, Masashi Yoneoka, Kenichiro Takakura, Kenji Yoshino, Mireia Bargallo Gonzalez, Eddy Simoen, Cor Claeys, Hidenori Ohyama

    physica status solidi c   2012.7

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    Abstract

    We have investigated the stress behavior in 2‐MeV electron irradiated boron‐doped Si0.75Ge0.25/Si‐substrate heterojunctions by using Raman spectroscopy. For a high fluence (∼1x1018 e/cm2), the Raman peak of the Si‐Si bonds in the boron‐doped Si0.75Ge0.25 layer has a tendency to move toward the high wave number side. The tendency increases with increasing electron fluence. This could be explained by local compressive stress variations in the Si0.75Ge0.25 layer during irradiation with varying fluence, due to the difference in the generation probability of the knock‐on atoms for silicon, germanium and boron. (© 2012 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)

    DOI: 10.1002/pssc.201200076

  • Stress evaluation by Raman spectroscopy in 2MeV electron irradiated SiGe/Si diodes

    角田 功

    31th Electronic Materials Symposium (EMS-31), Extended abstracts of 31th Electronic Materials Symposium, pp. 155-156, Izu (Japan).(ポスター発表)   2012.7

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  • Effect of high temperature annealing on the surface structure of Ga2O3 thn film

    角田 功

    31th Electronic Materials Symposium (EMS-31), Extended abstracts of 31th Electronic Materials Symposium, pp. 43-44, Izu (Japan).(ポスター発表)   2012.7

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  • Electron irradiation degradation of gate length modulated strained-Si pMOSFETs

    角田 功

    31th Electronic Materials Symposium (EMS-31), Extended abstracts of 31th Electronic Materials Symposium, pp. 153-154, Izu (Japan).(ポスター発表)   2012.7

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  • Electron-irradiation damage of commercial Monolithic Ceramic Capacitors

    角田 功

    31th Electronic Materials Symposium (EMS-31), Extended abstracts of 31th Electronic Materials Symposium, pp. 157-158, Izu (Japan).(ポスター発表)   2012.7

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  • 2MeV Electron irradiation damage of commercial JFET

    角田 功

    31th Electronic Materials Symposium (EMS-31), Extended abstracts of 31th Electronic Materials Symposium, pp. 157-158, Izu (Japan).(ポスター発表)   2012.7

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  • Investigation of crystalline qualities of silicon and tin doped beta-Ga2O3 film

    角田 功

    E-MRS 2012 Spring Meeting, Strasbourg (France). (ポスター発表)   2012.5

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  • 非晶質Ge薄膜のAu誘起結晶成長

    角田 功

    電気学会九州支部平成23年度(第2回)高専卒業研究発表会講演論文集、pp.35-36   2012.3

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  • 電子線照射InGaN LEDの電気的特性に関する調査

    角田 功

    電気学会九州支部平成23年度(第2回)高専卒業研究発表会講演論文集、pp.37-38   2012.3

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  • 商用JFETの電子線損傷

    角田 功

    平成23年度第26回熊本県産学官技術交流会   2012.1

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  • Ge濃度を変調したSi1-xGex S/D p-MOSFETsに及ぼす電子線照射の影響

    角田 功

    平成23年度第26回熊本県産学官技術交流会   2012.1

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  • IGBTの電子線照射損傷

    角田 功

    平成23年度第26回熊本県産学官技術交流会   2012.1

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  • Si添加したβ-Ga2O3の高温アニール処理による結晶性評価

    角田 功

    平成23年度第26回熊本県産学官技術交流会   2012.1

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  • β-Ga2O3薄膜へのSnドーピング効果

    角田 功

    平成23年度第26回熊本県産学官技術交流会   2012.1

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  • 陽子線照射によるCIGS 太陽電池への影響

    角田 功

    第3回半導体材料・デバイスフォーラム予稿集、pp.26-27   2011.12

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  • 高温熱処理によるGa2O3薄膜の相転移

    角田 功

    第3回半導体材料・デバイスフォーラム予稿集、pp.46-47   2011.12

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  • ゲート長の異なるSi1-xGex S/D p-MOSFETの電子線照射損傷

    角田 功

    第3回半導体材料・デバイスフォーラム予稿集、pp.85-86   2011.12

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  • スパッタリング法によるβ-Ga2O3薄膜へのSnドープ効果

    角田 功

    第3回半導体材料・デバイスフォーラム予稿集、pp.81-82   2011.12

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  • 移動体通信における半導体デバイスの役割と今後の開発

    角田 功

    第3回半導体材料・デバイスフォーラム予稿集、pp.22-25   2011.12

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  • 電子線照射Ge p-MOSFETのゲート長依存性

    角田 功

    第3回半導体材料・デバイスフォーラム予稿集、pp.75-76   2011.12

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  • 電子線照射Si1-xGex S/D p-MOSFETsのGe濃度依存性

    角田 功

    第3回半導体材料・デバイスフォーラム予稿集、pp.73-74   2011.12

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  • Si添加β-Ga2O3薄膜の結晶性評価

    角田 功

    第3回半導体材料・デバイスフォーラム予稿集、pp.83-84   2011.12

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  • Auを用いた非晶質Ge薄膜の低温結晶成長に関する研究

    角田 功

    第3回半導体材料・デバイスフォーラム予稿集、pp.89-90   2011.12

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  • CIGS太陽電池の劣化機構の解明

    角田 功

    第3回半導体材料・デバイスフォーラム予稿集、pp.2-5   2011.12

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  • Geダイオードの耐放射線特性に関する評価

    角田 功

    第3回半導体材料・デバイスフォーラム予稿集、pp.48-49   2011.12

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  • IGBTに与える電子線照射の影響

    角田 功

    第3回半導体材料・デバイスフォーラム予稿集、pp.77-78   2011.12

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  • Si1-xGex(0≦x≦0.01)ダイオードの電子線耐性評価

    角田 功

    第3回半導体材料・デバイスフォーラム予稿集、pp.87-88   2011.12

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  • SiダイオードのC添加による電子線特性の電気的評価

    角田 功

    第3回半導体材料・デバイスフォーラム予稿集、pp.79-80   2011.12

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  • 電子線照射したGeダイオードの電気的特性の劣化挙動

    角田 功

    平成23年度応用物理学会九州支部学術講演会   2011.11

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  • Si添加したβ-Ga2O3の高温アニール処理による結晶性評価

    角田 功

    平成23年度応用物理学会九州支部学術講演会   2011.11

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  • XRD investigation of the crysltalline quality of Sn Doped β-Ga2O3 films deposited by the RF magnetron sputtering method

    角田 功

    14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP-14), p.37, Miyazaki, Japan (Sep.25-29, 2011).(ポスター発表)   2011.9

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  • XPS Analysis of Si Doped Gallium Oxide Films

    角田 功

    14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP-14), p.38, Miyazaki, Japan (Sep.25-29, 2011).(ポスター発表)   2011.9

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  • Gate-length dependent radiation damage in 2-MeV electron-irradiated Si1-xGex S/D p-MOSFETs

    角田 功

    14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP-14), p.50, Miyazaki, Japan (Sep.25-29, 2011).(口頭発表)   2011.9

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  • Electrical Properties of 2-MeV Electron Irradiated p+n Ge Diodes

    角田 功

    14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP-14), p.40, Miyazaki, Japan (Sep.25-29, 2011).(ポスター発表)   2011.9

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  • SiGe S/D p-MOSFETsに及ぼす電子線照射の影響(1):Ge濃度依存性

    角田 功

    2011年秋季第72回応用物理学会学術講演会   2011.8

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  • 陽子線照射によるCIGS 太陽電池への影響

    角田 功

    2011年秋季第72回応用物理学会学術講演会   2011.8

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  • Snを添加したβ-Ga2O3のXRDによる結晶性評価

    角田 功

    2011年秋季第72回応用物理学会学術講演会   2011.8

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  • SiGe S/D p-MOSFETに及ぼす電子線照射の影響(2):ゲート長依存性

    角田 功

    2011年秋季第72回応用物理学会学術講演会   2011.8

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  • Geを微量ドープしたSiダイオードに及ぼす電子線照射の影響

    角田 功

    2011年秋季第72回応用物理学会学術講演会   2011.8

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  • Radiation damage of Si1-xGex S/D p-MOSFETs with different Ge concentration

    角田 功

    7th International Conference on Si Epitaxy and Heterostructures (ICSI-7), Leuven, Belgium, (May.22-26, 2011). (ポスター発表)   2011.8

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  • The electron-irradiation degradation and thermal-annelaing recovery in Ge diode and MOSFET

    角田 功

    30th Electronic Materials Symposium (EMS-30), Extended abstracts of 30th Electronic Materials Symposium, pp. 209-212, Shiga (Japan).(ポスター発表)   2011.6

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  • Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si

    角田 功

    26th Incternational Conference on Defects in Semiconductors (ICDS26), Nelson, New Zealand,(Jul.17-22, 2011).(ポスター発表)   2011.6

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  • Comparison of electrical performances of undoped and Ge doped SiGe diodes by 2-MeV electron irradiation

    角田 功

    30th Electronic Materials Symposium (EMS-30), Extended abstracts of 30th Electronic Materials Symposium, pp. 199-202, Shiga (Japan).(ポスター発表)   2011.6

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  • Electron irradiation effects of Si1-xGex (0<x<0.3) S/D p-MOSFETs

    角田 功

    30th Electronic Materials Symposium (EMS-30), Extended abstracts of 30th Electronic Materials Symposium, pp. 203-204, Shiga (Japan).(ポスター発表)   2011.6

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  • Evaluation of electrical properties for electron irradiated Si1-xCx diodes

    角田 功

    30th Electronic Materials Symposium (EMS-30), Extended abstracts of 30th Electronic Materials Symposium, pp. 217-218, Shiga (Japan).(ポスター発表)   2011.6

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  • Gate-Length Dependent Strain Relaxation in Electron-Irradiated SiGe S/D P-MOSFETs

    角田 功

    The Fifth International Conference on the Science and Technology for Advanced Ceramics (STAC5), Yokohama, Japan(Jun.22-24,2011). (ポスター発表)   2011.6

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  • Influence of 2-MeV electron irradiation for the electrical properties of Ge diode

    角田 功

    30th Electronic Materials Symposium (EMS-30), Extended abstracts of 30th Electronic Materials Symposium, pp. 205-208, Shiga (Japan).(ポスター発表)   2011.6

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  • 低学年へのGPSを利用した技術者育成教育

    葉山清輝, 角田功, 山崎充裕

    熊本高等専門学校研究紀要   2011.3

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  • 窒化物LEDの劣化現象(2):電子線照射の影響

    坂本聖哲, 山本智博, 渡邊知雅, 平子晃, 杉山睦, 角田功, 高倉健一郎, 大山英典, 大川和宏

    応用物理学関係連合講演会講演予稿集(CD-ROM)   2011.3

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    窒化物LEDの劣化現象(2):電子線照射の影響

  • IGBTの電子線照射及び熱処理による影響

    津曲大喜, 高倉健一郎, 角田功, 米岡将士, 中林正和, 中島敏之, 大山英典

    応用物理学関係連合講演会講演予稿集(CD-ROM)   2011.3

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    IGBTの電子線照射及び熱処理による影響

  • SiとSiGeダイオードの電気的特性による耐電子線性

    平山純也, 東孝洋, 角田功, 米岡将士, 高倉健一郎, 大山英典, VANHELLEMONT J

    熊本県産学官技術交流会講演論文集   2011.2

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    SiとSiGeダイオードの電気的特性による耐電子線性

  • 電子線照射したSiC ダイオードの電気的特性評価

    角田 功

    平成22年度第25回熊本県産学官技術交流会   2011.2

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  • 半導体デバイスの放射線損傷 ~SiダイオードとSiGeダイオードの比較~

    角田 功

    平成22年度第25回熊本県産学官技術交流会   2011.2

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  • SiGe S/D pMOSFET の電子線照射及び熱処理による特性評価

    角田 功

    平成22年度第25回熊本県産学官技術交流会   2011.2

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  • FTIR法を用いた電子線照射SiGe結晶の欠陥評価

    角田 功

    平成22年度第25回熊本県産学官技術交流会   2011.2

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  • Ge ダイオードに与える電子線照射の影響

    角田 功

    平成22年度第25回熊本県産学官技術交流会   2011.2

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  • SOI基板を用いたMEMS構造作製

    角田 功

    平成22年度第25回熊本県産学官技術交流会   2011.2

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  • 電子線照射InGaN LEDの劣化/回復機構の調査

    角田 功

    第2回半導体材料・デバイスフォーラム予稿集、pp.164-165   2010.12

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  • 2MeV電子線照射したSi太陽電池の熱処理による特性評価

    角田 功

    第2回半導体材料・デバイスフォーラム予稿集、pp.156-157   2010.12

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  • SOI基板を用いた犠牲層エッチングによるMEMSの作製

    角田 功

    第2回半導体材料・デバイスフォーラム予稿集、pp.136-137   2010.12

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  • SiGe/Siダイオードのライフタイムによる電子線耐性評価

    角田 功

    第2回半導体材料・デバイスフォーラム予稿集、pp.154-155   2010.12

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  • SiGeデバイスの電子線照射による劣化と熱処理による回復

    角田 功

    第2回半導体材料・デバイスフォーラム予稿集、pp.56-59   2010.12

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  • Si添加β-Ga2O3薄膜のX線光電子分光法による評価

    角田 功

    第2回半導体材料・デバイスフォーラム予稿集、pp.166-167   2010.12

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  • エネルギー分散X線分光を用いたSi添加β-Ga2O3の不純物密度の解析

    角田 功

    第2回半導体材料・デバイスフォーラム予稿集、pp.134-135   2010.12

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  • シリコン添加による酸化ガリウム膜の電気光学特性への影響とX線光電子分光スペクトル評価

    高倉健一郎, 角田功, 大山英典, 竹内大輔, 中島敏之, 高尾周一郎, 村上克也, 山本博康

    熊本高等専門学校研究紀要(CD-ROM)   2010.12

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    Investigation of electrical‐/optical‐properties and X‐ray photoelectron spectroscopy for highly‐Si doped gallium oxide films

  • シリコン添加による酸化ガリウム膜の電気光学特性への影響とX線光電子分光スペクトル評価

    高倉 健一郎, 角田 功, 大山 英典

    熊本高等専門学校研究紀要   2010.12

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    Investigation of electrical-/optical-properties and X-ray photoelectron spectroscopy for highly-Si doped gallium oxide films

  • バイポーラトランジスタの製作

    角田 功

    第2回半導体材料・デバイスフォーラム予稿集、pp.140-141   2010.12

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  • レーザラマン法による電子線照射SiGe層の歪の評価

    角田 功

    第2回半導体材料・デバイスフォーラム予稿集、pp.68-71   2010.12

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  • 赤外分光法により評価した半導体結晶中の欠陥形成

    角田 功

    第2回半導体材料・デバイスフォーラム予稿集、pp.132-133   2010.12

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  • 電子線を照射したGe添加SiダイオードのLifetime評価

    角田 功

    第2回半導体材料・デバイスフォーラム予稿集、pp.138-139   2010.12

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  • 電子線照射Ge p-MOSFETの熱処理温度依存性

    角田 功

    第2回半導体材料・デバイスフォーラム予稿集、pp.160-161   2010.12

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  • 電子線照射IGBTに及ぼす熱処理の影響

    角田 功

    第2回半導体材料・デバイスフォーラム予稿集、pp.162-163   2010.12

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  • 電子線照射InGaN LEDに与える熱処理効果

    角田 功

    第2回半導体材料・デバイスフォーラム予稿集、pp.60-61   2010.12

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  • 電子線照射によるInGaN LEDの電気的特性の劣化

    角田 功

    平成22年度応用物理学会九州支部学術講演会   2010.11

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  • Ge p‐MOSFETの電子線照射および熱処理効果

    塚本真幹, 高倉健一郎, 角田功, 米岡将士, 大山英典, 中島敏之, 高尾周一郎, SIMOEN E, CLAEYS C

    応用物理学会九州支部学術講演会講演予稿集   2010.11

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    Ge p‐MOSFETの電子線照射および熱処理効果

  • β-Ga2O3薄膜に与えるSiドーピング効果

    角田 功

    平成22年度応用物理学会九州支部学術講演会   2010.11

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  • 民生Si太陽電池の電子線照射による特性劣化

    角田 功

    平成22年度応用物理学会九州支部学術講演会   2010.11

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  • 電子線照射Ge p-MOSFETの熱処理による回復特性

    角田 功

    平成22年度応用物理学会九州支部学術講演会   2010.11

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  • 電子線照射Si1-xGex p-MOSFETに与える熱処理効果

    角田 功

    平成22年度応用物理学会九州支部学術講演会   2010.11

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  • 電子線照射した 汎用Siトランジスタの特性比較

    角田 功

    平成22年度応用物理学会九州支部学術講演会   2010.11

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  • Radiation damages of Ge devices and their recovery by annealing

    角田 功

    The 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications, pp.179-182, Takasaki, Japan, (Oct.27-29,2010).(ポスター発表)   2010.10

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  • 電子線照射によるInGaN LED の発光スペクトルの変化

    角田 功

    2010年秋季第71回応用物理学会学術講演会   2010.9

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  • Si添加したβ-Ga2O3の光学的特性とXPSによる化学結合状態の評価

    角田 功

    2010年秋季第71回応用物理学会学術講演会   2010.9

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  • 電子線を照射したSiGe S/D pMOSFETの 熱処理による回復特性

    角田 功

    2010年秋季第71回応用物理学会学術講演会   2010.9

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  • 電子線照射Ge p-MOSFETの熱処理による電気特性の回復

    角田 功

    2010年秋季第71回応用物理学会学術講演会   2010.9

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  • Investigation of electrical property and conversion efficiency of electron irradiated Si solar cells

    角田 功

    29th Electronic Materials Symposium (EMS-29), Extended abstracts of 30th Electronic Materials Symposium, pp. 155-156, Izu, Japan, (Jul.14-16, 2010).(ポスター発表)   2010.7

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  • Annealing behavior of electrical performances for electron irradiated InGaN LED

    角田 功

    29th Electronic Materials Symposium (EMS-29), Extended abstracts of 30th Electronic Materials Symposium, pp. 31-32, Izu, Japan, (Jul.14-16, 2010).(ポスター発表)   2010.7

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  • Electron irradiation damage of Ge p-MOSFET with different gate lengths

    角田 功

    29th Electronic Materials Symposium (EMS-29), Extended abstracts of 30th Electronic Materials Symposium, pp. 147-148, Izu, Japan, (Jul.14-16, 2010).(ポスター発表)   2010.7

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  • Evaluation of Si doped β-Ga2O3 thin films by optical characteristics

    角田 功

    29th Electronic Materials Symposium (EMS-29), Extended abstracts of 30th Electronic Materials Symposium, pp. 39-40, Izu, Japan, (Jul.14-16, 2010).(ポスター発表)   2010.7

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  • Evaluation of degradation and thermally recovery behavior of electron irradiated SiGe S/D pMOSFET

    角田 功

    29th Electronic Materials Symposium (EMS-29), Extended abstracts of 30th Electronic Materials Symposium, pp. 149-150, Izu, Japan, (Jul.14-16, 2010).(ポスター発表)   2010.7

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  • Evaluation of electron irradiated SiGe/Si diodes by Raman spectroscopy

    角田 功

    The 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications, pp.187-190, Takasaki, Japan, (Oct.27-29,2010).(ポスター発表)   2010.7

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  • Investigation of electron-irradiated commercial Si transistors for rad-hard device

    角田 功

    29th Electronic Materials Symposium (EMS-29), Extended abstracts of 30th Electronic Materials Symposium, pp. 151-152, Izu, Japan, (Jul.14-16, 2010).(ポスター発表)   2010.7

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  • Evaluation of electron irradiated embedded SiGe source/drain diodes by Raman spectroscopy

    角田 功

    E-MRS Spring Meeting, Strasbourg, France, June 7-11, 2010(ポスター発表)   2010.5

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  • Damages of Ge devices by 2-MeV electrons and their recovery

    角田 功

    E-MRS Spring Meeting, Strasbourg, France, June 7-11, 2010(ポスター発表)   2010.5

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  • Back-Side Illuminated CMOS Image Sensor Fabricated Using Compliant Bump

    角田 功

    International Conference on Solid State Devices and Materials, Miyagi, Japan,(Oct.7-9, 2009)(口頭発表)   2009.10

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  • Back-side illuminated CMOS image sensor fabricated using compliant bump

    角田 功

    2009 International Conference on Solid State Devices and Materials (SSDM2009) Extended abstract, pp. 90-91 (Sept., 2009).   2009.9

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  • Compliant Bump Technology for Back-Side Illuminated CMOS Image Sensor

    Tanemasa Asano, Naoya Watanabe, Isao Tsunoda, Yasuhiro Kimiya, Katsuaki Fukunaga, Minoru Handa, Hiroki Arao, Yasuhiro Yamaji, Masahiro Aoyagi, Takao Higashimachi, Koichiro Tanaka, Takayuki Takao, Kimiharu Matsumura, Akihiro Ikeda, Yukinori Kuroki, Toshio Tsurushima

    2009 IEEE 59TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, VOLS 1-4   2009.5

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    We have developed a compliant bump technology for 3D chip stacking with the same number of inter-chip connections as that in a VGA (video graphic array, 640 x 480). Using this technology together with a through-Si via (TSV) technology, we demonstrate a prototype of back-side illuminated CMOS image sensor, in which a very-thin rear-illuminated photodiode array is electrically connected to the CMOS readout circuit at a pixel level.

  • Application of Compliant Bump to Stacking Ultra-Thin Chips with High Number of Inter-Chip Connections for Back-Side Illuminated CMOS Image Sensor

    角田 功

    The 2009 International Meeting for Future of Electron Devices, Kansai, Osaka, Japan(May. 14-15, 2009)(口頭発表)   2009.5

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  • Low Temperature Crystallization of a-SiGe on Insulating Films for Thin Film Transistor Application

    Masanobu Miyao, Hiroshi Kanno, Isao Tsunoda, Taizoh Sadoh

    ECS Transactions   2006.10

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    Development of high-mobility semiconductors is strongly needed to realize high-performance thin-film transistors. To achieve this, we have been investigating low temperature solid-phase crystallization and metal-induced lateral crystallization of a- SiGe on insulating substrates. These realize uniform crystal growth of SiGe with all Ge fractions. In addition, thin-film transistors with Schottky source and drain structures were fabricated, which showed good ambipolar operation characteristics. Present paper reviews such our recent progress of low temperature SiGe growth and discusses the possible application to thin-film transistors with high speed operation.

    DOI: 10.1149/1.2355858

  • Geフリープロセスによる歪SOI構造の形成

    角田 功

    電応研テクニカルレポート,vol. 15, no. 1, pp. 20-24   2005.12

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  • 酸化濃縮法による歪緩和SGOI層の形成と欠陥評価

    角田 功

    第58回電気関係学会九州支部連合大会   2005.9

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  • SiGe/SOI構造の酸化濃縮過程における歪の不均一緩和

    角田 功

    第66回応用物理学会学術講演会   2005.9

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  • Improved oxidation-induced Ge condensation technique by using H+ irradiation and post-annealing for highly stress-relaxed ultrathin SGOI

    角田 功

    (SSDM 2005 B-7-2, Kobe, Japan, (Sep.12-15,2005))(口頭発表)   2005.9

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    Improved oxidation-induced Ge condensation technique by using H^+ irradiation and post-annealing for highly stress-relaxed ultrathin SGOI

  • SiGe/SOI構造の低温酸化とGe取り込み現象

    角田 功

    第66回応用物理学会学術講演会   2005.9

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  • SiGe/SOI構造の低温酸化とGe取り込み現象

    角田 功

    第58回電気関係学会九州支部連合大会   2005.9

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  • Thickness dependent stress-relaxation in thin SGOI structures and its improvement

    角田 功

    ICSI4 2005 Awaji , Japan, (May. 23-26,2005)(ポスター発表)   2005.5

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  • Direct formation of strained Si on insulator by laser annealing

    角田 功

    ICSI4 2005 Awaji , Japan, (May. 23-26,2005)(口頭発表)   2005.5

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  • 歪SOI用SiGe仮想基板の高品質化:酸化濃縮に与えるパラメータの検討と制御

    角田 功

    第52回応用物理学会学術講演会   2005.3

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  • β-FeSi2/Siの熱処理誘起表面凹凸の抑制:非晶質Siキャッピング効果

    角田 功

    第52回応用物理学会学術講演会   2005.3

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  • Formation of High Quality SGOI Structure by Modified Oxidation-Induced Ge Condensation Process

    角田 功

    ECS 2004 SiGe, 1370 , Hawaii , U.S.A. (Oct. 3-8,2004)(ポスター発表)   2004.10

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  • Annealing Characteristics of Poly-SiGe(B) on Insulating Film

    角田 功

    SiGe-WS 2004, P-32, Sendai, Japan (ポスター発表)   2004.10

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  • 絶縁膜上における金属ナノドットの高密度形成(2):ドット形成プロセスの金属種依存

    角田 功

    第65回応用物理学会学術講演会   2004.9

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  • レーザアニールによる歪Si/SiO2/Si構造の直接形成

    角田 功

    第65回応用物理学会学術講演会   2004.9

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  • 分子線エピタキシー法によるシリサイド半導体 β-FeSi2/Siの形成と歪評価

    角田 功

    第57回電気関係学会九州支部連合大会   2004.9

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  • 固相成長法による磁性金属ナノドット/SiO2の高密度形成

    角田 功

    第57回電気関係学会九州支部連合大会   2004.9

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  • 歪Si-SOI用SiGe仮想基板の高品質化:酸化濃縮プロセスの検討

    角田 功

    第57回電気関係学会九州支部連合大会   2004.9

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  • 瞬間溶融法による歪Si/SiO2/Si構造の形成

    角田 功

    第57回電気関係学会九州支部連合大会   2004.9

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  • 非晶質基板上におけるSiGe薄膜の低温成長

    角田 功

    応用物理学会 Siテクノロジー分科会,No.62,JSAP:AP042224,pp28-33   2004.6

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  • 非晶質Ge/SiO2へのSi局所導入による固相成長の促進

    角田 功

    第51回応用物理学関係連合講演会   2004.3

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  • Fe3Si/SiO2の形成と磁気特性-熱処理効果-

    角田 功

    第51回応用物理学関係連合講演会   2004.3

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  • 絶縁膜上における金属ナノドットの高密度形成(1)-Feドットの形成-

    角田 功

    第51回応用物理学関係連合講演会   2004.3

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  • Metal-induced low-temperature crystallization of amorphous SiGe on insulating films

    M Miyao, H Kanno, Tsunoda, I, T Sadoh, A Kenjo

    PROGRESS IN SEMICONDUCTORS II- ELECTRONIC AND OPTOELECTRONIC APPLICATIONS   2003.12

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    Metal-induced low temperature (less than or equal to550 degreesC) crystallization of a-Si1-xGex (0 less than or equal to x less than or equal to 1) layers on SiO2 films has been investigated. For low Ge fractions below 20 &#37;, Ge-doping enhanced plane growth was observed. This realized strain-free poly-Si0.8Ge0.2 films with large grains (18 gm). On the other hand, dendrite growth was dominant for intermediate Ge fractions with 40-60 &#37;. Directions and widths of dendrites became straight and narrow with decreasing annealing temperature. As a result, very sharp needlelike crystals (width: 0.05 mum, length: 10 mum) were obtained at the optimized growth conditions (x: 0.4, annealing: 450 degreesC, 20 h). These new polycrystalline SiGe films on insulators should be used for the advanced system-in-displays and novel one-dimensional wires.

  • Positon Control of Nucleation in Solid-Phase Crystallization of a-Si/SiO2 by Ge Layer Insertion

    角田 功

    2003 MRS Fall Meeting, V2.5, Boston, USA, (Dec. 1-5, 2003)(ポスター発表)   2003.12

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  • Formation of High Quality β-FeSi2 by Pre-Amorphization-Enhanced Atomic Mixing

    角田 功

    2003 MRS Fall Meeting, R9.16, Boston, USA, (Dec. 1-5, 2003)(ポスター発表)   2003.12

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  • Position control of nucleation in solid-phase crystallization of a-Si/SiO2 by Ge layer insertion

    角田 功

    Material Research Society Symposium Proceedings, vol. 796, pp. 39-43   2003.12

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  • Ge thickness dependent solid-phase crystallization of a-Si/a-Ge multi-layers deposited on SiO2

    角田 功

    International Symposium on Information Science and Electrical Engineering (ISEE2003), 1B-3, Fukuoka, Japan, (Nov. 13-15, 2003)(口頭発表)   2003.11

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  • Solid-Phase Crystallization of β-FeSi2 Thin Film in Fe/Si Structure

    角田 功

    IUMRS-ICAM 2003, C7-13-O03, Yokohama, Japan, (Oct. 8-13,2003)   2003.10

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  • Nucleation-Control in Solid-Phase-Crystallization of a-Si/SiO2 by Local Ge Insertion

    角田 功

    2003 International Conference on Solid State Devices and Materials (SSDM2003) Extended abstract, Tokyo, Japan, Sep. 19, 2003, pp506-507   2003.9

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  • 非晶質SiGe/SiO2, Si/Ge/SiO2構造の固相成長における膜厚効果

    角田 功

    第56回電気関係学会九州支部連合大会   2003.9

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  • Furnace annealing behavior of B-doped poly-SiGe formed on insulating film

    角田 功

    Research Reports on Information Science and Electrical Engineering of Kyushu University, vol. 8, no. 2, pp. 151-154 (Sept., 2003).   2003.9

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    Furnace Annealing Behavior of B-doped Poly-SiGe Formed on Insulating Film

    DOI: 10.15017/1515848

  • Nucleation-Control in Solid-Phase-Crystallization of a-Si/SiO2 by Local Ge Insertion

    角田 功

    International Conference on Solid State Devices and Materials, pp4-8, Tokyo, Japan, (Sep. 16-18, 2003)(ポスター発表)   2003.9

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  • Solid phase crystallization of a-Si in Si/Ge multi-layer

    角田 功

    Research Reports on Information Science and Electrical Engineering of Kyushu University, vol. 8, no. 2, pp. 147-150 (Sept., 2003).   2003.9

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    Solid Phase Crystallization of a-Si in Si/Ge Multi-layer

    DOI: 10.15017/1515847

  • イオン線照射による非晶質Si1-xGex/SiO2の低温固相成長

    角田 功

    第56回電気関係学会九州支部連合大会   2003.9

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  • 酸化膜上におけるFeナノドットの高密度形成

    角田 功

    第56回電気関係学会九州支部連合大会   2003.9

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  • 非晶質SiGe/SiO2構造の固相成長における膜厚効果

    角田 功

    第64回応用物理学会学術講演会   2003.8

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  • Low-Temperature Formation of Poly-SiGe on SiO2 by Ion-Beam Stimulated Solid-Phase Crystallization

    角田 功

    2003 International Workshop on Active-Matrix Liquid-Crystal Displays, TFT2-2, Tokyo, Japan, July 9-11, 2003(口頭発表)   2003.7

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  • Low-temperature formation of poly-SiGe on SiO2 by ion-beam stimulated solid-phase crystallization

    角田 功

    Digest of Technical Papers AM-LCD, pp. 29-32   2003.7

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  • Solid Phase Crystallization of High-Quality SiGe Films on SiO2 by Local Ge-Insertion

    角田 功

    E-MRS 2003 Spring Meeting, D-III.8, Strasbourg, France, June 10-13,2003(口頭発表)   2003.6

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  • 400℃ formation of poly-Si1-xGex (x≧0.5) on SiO2 by ion-beam stimulated solid phase crystallization

    角田 功

    Material Research Society Symposium Proceeding, vol. 744, pp. 501-506 (May, 2003).   2003.5

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    500 degrees C formation of poly-Si1-xGex (x >= 0.5) on SiO2 by ion-beam stimulated solid phase crystallization
    Ion beam stimulated solid phase crystallization of a-Si1-xGex (0 less than or equal to x less than or equal to 1) on SiO2 has been investigated. The critical temperature to cause crystal nucleation can be successfully decreased by 150 degreesC for a-Si1-xGex with all Ge fractions (0 - 100 &#37;) by using ion stimulation. As a result, crystal growth below the softening temperature (similar to 500 degreesC) of glass substrates was achieved for samples with Ge fractions exceeding 50 &#37;. This method combined with Ge doping and ion stimulation will be a powerful tool to fabricate poly-SiGe TFTs on low cost glass substrates.

  • 絶縁膜上におけるSiGe薄膜の低温形成と次世代ディスプレー

    角田 功

    電子情報通信学会-有機ELとTFT(シリコン、化合物、有機)およびディスプレー技術-   2003.4

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    Low Temperature Solid-Phase Crystallization of SiGe on Insulator for Future Devices
    Low temperature solid-phase crystallization (SPC) of a-SiGe on SiO_2 has been investigated. The crystal nucleation of a-Si occurred at temperatures above 700℃, while the nucleation temperature was significantly decreased to 500℃ by using a-SiGe and ion irradiation during SPC. It was also shown that local doping of Ge at the a-Si/SiO_2 interface could control crystal orientation during SPC. In addition, metal induced lateral crystallization of a-SiGe was firstly examined, which achieved strain-free poly-Si_<0.8>Ge_<0.2> with large grains (18 μm). These new polycrystalline SiGe films on SiO_2 can be used for the system-in-display and three-dimensional ULSI.

  • 絶縁膜上におけるSiGe薄膜の低温形成と次世代ディスプレー

    角田 功

    電子情報通信学会技報、ED2003-6、SDM2003-6、OME2003-6(2003-4)、pp.29-34   2003.4

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  • 非晶質Si/SiO2へのGe局所導入による結晶核発生の位置制御

    角田 功

    第50回応用物理学関係連合講演会   2003.3

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  • β-FeSi2/Si固相成長に与える基板表面の非晶質化効果

    角田 功

    第50回応用物理学関係連合講演会   2003.3

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  • イオン線誘起固相成長法で低温形成した多結晶SiGe/絶縁膜の結晶性評価

    角田 功

    第50回応用物理学関係連合講演会   2003.3

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  • 仮想SiGe基板/SOIの高品質化(2)-低欠陥・高平坦形成-

    角田 功

    第50回応用物理学関係連合講演会   2003.3

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  • 非晶質Ge/Si積層構造による金属誘起固相成長の促進

    角田 功

    第50回応用物理学関係連合講演会   2003.3

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  • Ge dependent morphological change in poly-SiGe formed by Ni-mediated crystallization

    角田 功

    First International SiGe Technology and Device Meeting, VIII-B-3, Nagoya, Japan, January 15-17, 2003(ポスター発表)   2003.1

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  • Enhanced Crystal Nucleation in a-SiGe/SiO2 by Ion-irradiation Assisted Annealing

    角田 功

    First International SiGe Technology and Device Meeting, IX-B-2, Nagoya, Japan, January 15-17, 2003(ポスター発表)   2003.1

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  • Metal-Induced Low-Temperature Crystallization of Amorphous SiGe on Insulating Films

    角田 功

    MRS Fall Meeting, M2.8, Boston, USA, December 2-6,2002(ポスター発表)   2002.12

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  • 400℃ Formation of Poly-Si1-xGex (X≧0.5) on SiO2 by Ion-Beam Stimulated Solid-Phase-Crystallization

    角田 功

    MRS Fall Meeting, M8.22, Boston, USA, December 2-6,2002(ポスター発表)   2002.12

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  • 非晶質SiGe/絶縁膜の低温固相成長(2)-イオン誘起核発生-

    角田 功

    第63回応用物理学会学術講演会   2002.9

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  • Ge局所導入による擬似Si単結晶/SiO2の形成(1)-結晶核の空間位置制御-

    角田 功

    第55回電気関係学会九州支部連合大会   2002.9

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  • Ge局所導入による擬似Si単結晶/SiO2の形成(2)-結晶核の方位制御-

    角田 功

    第55回電気関係学会九州支部連合大会   2002.9

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  • Metal-Induced Solid-Phase Crystallization of Amorphous SiGe Films on Insulator

    角田 功

    2002 International Conference on Solid State Devices and Materials (SSDM2002) Extended abstract, pp.766-767   2002.9

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  • Metal-Induced Solid-Phase Crystallization of Amorphous SiGe Films on Insulator

    角田 功

    International Conference on Solid State Devices and Materials, C-9-2, Nagoya, Japan, September 17-20, 2002(口頭発表)   2002.9

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  • 仮想SiGe基板/SOIの高品質化(1)-非晶質SiGeの拡散-

    角田 功

    第63回応用物理学会学術講演会   2002.9

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  • 固相拡散法による歪みSi用SiGe仮想基板の形成

    角田 功

    第55回電気関係学会九州支部連合大会   2002.9

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  • 金属触媒誘起固相成長法を用いた多結晶SiGe薄膜/絶縁膜の低温形成

    角田 功

    第55回電気関係学会九州支部連合大会   2002.9

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  • 非晶質SiGe/絶縁膜の低温固相成長(1)-初期非晶質性の検討-

    角田 功

    第63回応用物理学会学術講演会   2002.9

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  • Thickness dependence and pre-irradiation effects for low-temperature nucleation in a-Si1-xGex on SiO2

    角田 功

    Digest of Technical Papers AM-LCD, pp. 137-140 (Jul., 2002)   2002.7

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  • Thickness Dependence and Pre-Irradiation Effects for Low-Temperature Nucleation in a-Si1-xGex ON SiO2

    角田 功

    2002 International Workshop on Active-Matrix Liquid-Crystal Displays, TFTp2-2, Tokyo, Japan, July 10-12, 2002(ポスター発表)   2002.7

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  • Pre-Irradiation Effect on Solid-Phase Crystallization in a-Si1-xGex on SiO2

    角田 功

    The 2nd International Workshop on New Group IV (Si-Ge-C) Semiconductors, IV-02, Kofu, Japan, June 2-4, 2002(ポスター発表)   2002.6

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  • Low-temperature formation of poly-SiGe on insulator enhanced by metal-catalysis and ion-irradiation

    角田 功

    E-MRS Spring Meeting, K-IV.4, Strasbourg, France, June 18-21, 2002(ポスター発表)   2002.6

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  • Metal-induced crystallization of amorphous SiGe films on insulator

    角田 功

    The 2nd International Workshop on New Group IV (Si-Ge-C) Semiconductors, IV-01, Kofu, Japan, June 2-4, 2002(ポスター発表)   2002.6

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  • ボンド変調によるa-Si/SiO2の低温固相成長

    角田 功

    電子情報通信学会技報 (ED2002-5) Vol.102, No.4, pp.23-27   2002.4

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    Low Temperature Solid-Phase Crystallization of a-Si/SiO_2 Enhanced by Bond Modulation
    Effects of Ge doping and ion-irradiation on solid-phase crystallization of amorphous Si on SiO_2 have been investigated. The results showed that the annealing temperature required to crystal nucleation significantly decreased to 400℃ by using both Ge doping and ion-irradiation (25 keV, 1x10^<16> cm^<-2>). In addition, crystal growth along both (111) and (220) direction was confirmed by using X-ray diffraction method. The enhancement of crystal nucleation is discussed on the basis of Si-Si bond-modulation induced by Ge doping and ion-irradiation. This bond modulation method will be a powerful tool to fabricate high-quality and low-cost poly-Si thin-film transistors on glass substrates.

  • 非晶質Si/Ge/絶縁膜積層構造における固相成長の促進

    角田 功

    第49回応用物理学関係連合講演会   2002.3

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  • 多結晶Si(Ge)/絶縁膜における金属誘起固相成長(1) -前駆体効果-

    角田 功

    第49回応用物理学関係連合講演会   2002.3

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  • 多結晶Si(Ge)/絶縁膜における金属誘起固相成長(2) -Ge濃度依存性-

    角田 功

    第49回応用物理学関係連合講演会   2002.3

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  • イオン照射誘起ボンド変調によるSiGe擬似単結晶/絶縁膜の低温形成

    角田 功, 永田 朝洋, 権丈 淳[他]

    九州大学ベンチャービジネスラボラトリー年報   2001.12

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    Low-Temperature Solid-Phase Growth of a-SiGe/SiO_2 by Bond Modulation with Ion Irradiation

  • a-SiGe/SiO2の固相成長における膜厚依存性及びGe添加効果

    角田 功

    平成13年度応用物理学会九州支部学術講演会   2001.12

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  • 金属触媒誘起固相成長法を用いた多結晶Si薄膜/絶縁膜の低温形成

    角田 功

    第54回電気関係学会九州支部連合大会   2001.10

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  • SiO2上における非晶質Si1-xGex薄膜のイオン線誘起固相成長

    角田 功

    第54回電気関係学会九州支部連合大会   2001.10

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  • 絶縁膜上における非晶質SiGeの固相成長に与えるイオン線照射効果

    角田 功

    第62回応用物理学会学術講演会   2001.9

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  • イオン誘起固相成長によるSiGe擬似結晶/絶縁膜の形成

    角田 功

    平成13年電気学会電子・情報・システム部門大会   2001.9

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  • Enhancement of solid-phase crystallization of a-Si on SiO2 by Si-Si bond modulation

    角田 功

    2001 International Workshop on Active-Matrix Liquid-Crystal Displays, TFTp4-2, Tokyo, Japan, July 11-13, 2001(ポスター発表)   2001.7

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  • Enhancement of solid-phase crystallization of a-Si on SiO2 by Si-Si bond modulation

    角田 功

    Digest of Technical Papers AM-LCD, pp. 167-170   2001.7

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  • Low-temperature solid-phase crystallization of a-Si1-XGeX ON SiO2 by ion-beam stimulation

    角田 功

    E-MRS Spring Meeting, D-XI/P11, Strasbourg, France, June 5-8, 2001(ポスター発表)   2001.6

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  • 絶縁膜上における非晶質Siの固相成長に与えるボンド変調効果

    角田 功

    第48回応用物理学関係連合講演会   2001.3

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  • Solid Phase Crystallization of a-Si on SiO2 Induced by Ion Irradiation at Low Temperature

    角田 功

    Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology and 2nd International Workshop on Development of Thin Films for Future ULSI's and Nano-Scale Process Integration, Ise, Japan, November 20-24, 2000(口頭発表)   2000.11

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  • Influence of ion beam irradiation on solid-phase regrowth of amorphous Si on SiO2

    Tsunoda, I, T Nagata, T Sadoh, A Kenjo, M Miyao

    BEAM INJECTION ASSESSMENT OF MICROSTRUCTURES IN SEMICONDUCTORS, 2000   2000.11

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    We have investigated the influence of Ar+ ion beam irradiation on the solid-phase crystallization (SPC) of amorphous Si on SiO2. The results indicated that the annealing temperature required to begin the SPC drasticalty decreased by the utilization of Ar+ irradiation, i.e., 400 degreesC for the samples with irradiation and 700 degreesC for the samples without irradiation. In addition, both (111) and (220) Si peaks were observed in the XRD spectra for the samples annealed with Ar+ irradiation. In this way, new method of SPC at low temperature has been established.

  • 絶縁膜上における非晶質Siのイオン線誘起固相成長

    角田 功

    第61回応用物理学会学術講演会   2000.9

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  • SiO2上の非晶質Si薄膜の固相成長におけるイオン線照射効果

    角田 功

    第53回電気関係学会九州支部連合大会   2000.9

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  • Ion Irradiation Stimulated Crystal Nucleation in Amorphous Si on SiO2

    角田 功

    International Conference on Solid State Devices and Materials, Sendai, Japan, August 31, 2000(口頭発表)   2000.8

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  • Ion Irradiated Stimulated Crystal Nucleation in Amorphous Si on SiO2

    角田 功

    2000 International Conference on Solid State Devices and Materials (SSDM2000) Extended abstract, pp.442-443   2000.8

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  • Ion-stimulated Solid-phase Crystallization of Amorphous Si on SiO2

    角田 功

    E-MRS Spring Meeting, Strasbourg, France, May 30-June 2, 2000(口頭発表)   2000.5

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  • 次世代情報システムのための擬似単結晶Si薄膜の創出

    角田 功

    九州大学ベンチャービジネスラボラトリー年報   2000.3

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    Formation of quasi-single crystal Si films for future information systems

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Professional Memberships

  • 応用物理学会

  • The Institute of Electronics Information and Communication Engineers

  • 応用物理学会

  • The Institute of Electronics Information and Communication Engineers

Research Projects

  • 「半導体産業の強化及びユーザー産業を含めた新たな産業エコシステムの形成」  半導体産業の技術革新等のスピードに対応するため及び半導体の需給の増減を安定させるため、下記3点を熊本県・熊本大学が地域産業等と連携して取り組み、県内半導体産業の持続的な発展につなげます。  (1)熊本県の半導体産業の強みである前工程・製造装置製造分野における産学での共同研究の強化  (2)国内初の三次元積層実装の量産化の確立、新産業の創生  (3)半導体ユーザー産業との連携により新産業が創出される新たなエコシステムの形成

    2023 - 2033

    内閣府「地方大学・地域産業創生交付金」

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    Authorship:Collaborating Investigator(s) (not designated on Grant-in-Aid)  Grant type:Contract research

  • 文部科学省次世代X-nics半導体創生拠点形成事業として、日本の集積回路産業やサプライチェーンをグリーン化するゲームチェンジを目指し、低環境負荷等のグリーンな半導体実現に向けて、システム・回路・デバイス・プロセス・材料の集積研究と人材育成を統合的に推進します。 東京工業大学、豊橋技術科学大学、広島大学を中心としたSiエレクトロニクスのトップ研究者を集結し、 企業との共同研究等も進めつつ、EVやAR等の新市場創造の鍵となる新しい集積回路技術の研究開発を推進します。 また高等専門学校のほか半導体産業における参画企業を含むチームにより30年後を見据えた実践的な人材育成に取り組みます。 加えて集積回路製作の全工程を経験するための試作ラインや設計環境の共用化や、社会人リカレント人材育成の充実などを実施します。

    2022 - 2024

    次世代X-nics半導体創生拠点形成事業

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    Authorship:Collaborating Investigator(s) (not designated on Grant-in-Aid)  Grant type:Contract research

  • 低温(≦150℃)成長法によるIV族半導体結晶の面方位制御

    Grant number:17K06363  2017 - 2019

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (C)

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    Grant type:Scientific research funding

  • 低温(≦150℃)成長法によるIV族半導体結晶の面方位制御

    Grant number:17K06363  2017 - 2019

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (C)

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    Grant type:Scientific research funding

  • 触媒成長を用いたⅣ族半導体結晶形成プロセスの極低温化

    Grant number:26870815  2014 - 2015

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (C)

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    Grant type:Scientific research funding

  • 触媒成長を用いたⅣ族半導体結晶形成プロセスの極低温化

    Grant number:26870815  2014 - 2015

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (C)

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    Grant type:Scientific research funding

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