Updated on 2024/09/02

Information

 

写真a

 
KUSABA AKIRA
 
Video URL
Organization
Research Institute for Applied Mechanics Division of Renewable Energy Dynamics Associate Professor
Kyushu University Platform of Inter/Transdisciplinary Energy Research (Joint Appointment)
Interdisciplinary Graduate School of Engineering Sciences Department of Interdisciplinary Engineering Sciences(Joint Appointment)
Research Institute for Information Technology Pan-Omics Data-Driven Innovation Research Center (Joint Appointment)
Title
Associate Professor
Contact information
メールアドレス
Profile
次世代半導体結晶成長への機械学習応用に取り組んでいます。

Research Areas

  • Nanotechnology/Materials / Thin film/surface and interfacial physical properties

  • Nanotechnology/Materials / Crystal engineering

  • Informatics / Computational science

Degree

  • Dr. Engineering ( 2019.3   Kyushu University )

Research History

  • Kyushu University Research Institute for Applied Mechanics Associate Professor

    2023.12 - Present

  • Kyushu University Research Institute for Applied Mechanics Assistant Professor

    2020.6 - 2023.11

  • Gakushuin University Computer Centre JSPS Research Fellow PD

    2019.4 - 2020.5

Education

  • Kyushu University   Graduate School of Engineering   Department of Aeronautics and Astronautics (Doctoral Program)

    2016.4 - 2019.3

  • Kyushu University   Graduate School of Engineering   Department of Aeronautics and Astronautics (Master's Program)

    2014.4 - 2016.3

  • Kyushu University   School of Engineering   Department of Mechanical and Aerospace Engineering

    2010.4 - 2014.3

Research Interests・Research Keywords

  • Research theme:Reaction Rate Constants by Data Assimilation

    Keyword:Vapor phase reaction model, Ab initio calculation, Transition state theory, Time-of-flight mass spectrometry data, Multi-objective optimization

    Research period: 2020.12 - Present

  • Research theme:Exploration of Surface Structure by Bayesian Optimization

    Keyword:Surface reconstruction, Surface phase diagram, DFT, Ising model, Quantum annealing

    Research period: 2020.4 - Present

  • Research theme:Adsorption Model Based on Nonequilibrium Quantum Thermodynamics

    Keyword:Impurity, Chemisorption, Surface reconstruction, SEAQT, DFT

    Research period: 2016.10 - 2019.3

  • Research theme:Driving Force Depending on Growth Orientation

    Keyword:Supersaturation, Surface energy, Surface reconstruction, Thermodynamic analysis, DFT

    Research period: 2016.4 - 2019.3

Awards

  • 研究奨励賞

    2024.5   日本結晶成長学会ナノ構造・エピタキシャル成長分科会   データ駆動イジング模型による半導体表面再構成の研究

    草場 彰

  • 第19回奨励賞

    2021.10   日本結晶成長学会   非平衡量子熱力学によるGaN気相成長プロセスの解明

    草場 彰

  • 学生表彰 (学術研究活動表彰)

    2016.3   九州大学  

    草場 彰

  • Poster Prize of Italian Association of Crystallography

    2015.9   5th European Conference on Crystal Growth (ECCG-5)  

    Akira Kusaba, Yoshihiro Kangawa, Stanislaw Krukowski, Koishi Kakimoto

  • 優秀学生賞

    2014.3   日本航空宇宙学会西部支部  

    草場 彰

  • 学生ポスター賞

    2017.12   第46回結晶成長国内会議   GaN(0001)におけるNH3吸着過程の非平衡量子熱力学モデリング:付着係数の理論解析

    草場彰, 李冠辰, マイケル・ヴォン・スパコフスキー, 寒川義裕, 柿本浩一

  • Outstanding Presentation Award

    2017.10   International Conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017)  

    Akira Kusaba, Yoshihiro Kangawa, Pawel Kempisty, Kenji Shiraishi, Koichi Kakimoto, Akinori Koukitu

  • Young Scientist Award

    2015.11   6th International Symposium on Growth of III-Nitrides (ISGN-6)  

    Akira Kusaba, Yoshihiro Kangawa, Yoshio Honda, Hiroshi Amano, Koichi Kakimoto

  • 発表奨励賞

    2015.5   第7回窒化物半導体結晶成長講演会   InN加圧MOVPE成長における成長形と異相混入:表面エネルギーの理論解析

    草場彰, 寒川義裕, 柿本浩一

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Papers

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Presentations

  • データ駆動Ising模型によるGaN表面再構成の研究 Invited

    草場 彰

    名古屋大学CIRFEシンポジウム「エピタキシャル成長の量子論」  2024.9 

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    Event date: 2024.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋   Country:Japan  

  • ベイズ最適化とデータ同化による半導体気相成長モデリング Invited

    草場 彰

    日本学術振興会R032委員会第16回研究会  2024.3 

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    Event date: 2024.3

    Language:Japanese  

    Venue:福岡   Country:Japan  

  • 反応経路自動探索によるトリメチルガリウム分解過程の理論解析

    杉山佳奈美, 草場彰

    第84回応用物理学会秋季学術講演会  2023.9 

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    Event date: 2023.9

    Language:Japanese  

    Venue:熊本   Country:Japan  

  • データ科学による結晶成長モデリングの高度化 Invited

    草場彰, 寒川義裕, 久保山哲二, 新田州吾, 白石賢二, 押山淳

    第2回スーパーコンピュータ「富岳」成果創出加速プログラム研究交流会  2023.3 

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    Event date: 2023.3

    Language:Japanese  

    Venue:オンライン   Country:Japan  

  • 結晶成長の計算科学と機械学習応用 Invited

    草場 彰

    2022年日本結晶成長学会特別講演会『赤﨑勇先生追悼講演会~結晶成長が描く夢の継承~』  2022.2 

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    Event date: 2022.2

    Language:Japanese  

    Venue:オンライン   Country:Other  

  • 微傾斜GaN(0001)におけるIn拡散ポテンシャル

    西澤宏隆, 草場彰, 寒川義裕

    第53回結晶成長国内会議  2024.11 

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    Event date: 2024.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:東京   Country:Japan  

  • ステップ離脱型ファセット化マクロステップ定常成長の「ステップ」成長方向と積層欠陥抑制

    阿久津典子, 草場彰, 寒川義裕

    第53回結晶成長国内会議  2024.11 

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    Event date: 2024.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京   Country:Japan  

  • 量子化学計算を用いたGaN有機金属気相成長の系統的反応経路探索

    杉山佳奈美, 草場彰

    第53回結晶成長国内会議  2024.11 

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    Event date: 2024.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京   Country:Japan  

  • GaN結晶中のMg拡散機構の解明:モンテカルロシミュレーションによる解析

    伊藤佑太, 草場彰, 渡邉浩崇, 新田州吾, 田中敦之, 本田善央, 寒川義裕, 天野浩

    第53回結晶成長国内会議  2024.11 

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    Event date: 2024.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京   Country:Japan  

  • データ同化を用いた反応速度定数の推定によるGaN MOVPEデジタルツインの構築

    生越奎太朗, 佐野雅季, 草場彰, 白石賢二, 寒川義裕

    第53回結晶成長国内会議  2024.11 

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    Event date: 2024.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:東京   Country:Japan  

  • Adsorption energetics and thermodynamics on semiconductor surfaces based on machine learning Invited International conference

    Akira Kusaba

    Materials Oceania 2024  2024.9 

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    Event date: 2024.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Phuket (Online)   Country:Thailand  

  • Determination of Local Electron Counting Rule Satisfaction by SAT Solver International conference

    Akira Kusaba, Tetsuji Kuboyama, Yoshihiro Kangawa

    9th Asian Conference on Crystal Growth and Crystal Technology (CGCT-9)  2024.6 

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    Event date: 2024.6

    Language:English  

    Country:Korea, Republic of  

  • データ駆動イジング模型による半導体表面再構成の研究 Invited

    草場 彰

    第16回ナノ構造エピタキシャル成長講演会  2024.5 

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    Event date: 2024.5 - 2024.6

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:高知   Country:Japan  

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  • Vacancies in III-Nitrides (II): Diffusion near Hetero Interfaces International conference

    Reo Shimauchi, Yoshihiro Kangawa, Akira Kusaba

    10th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA 2024)  2024.4 

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    Event date: 2024.4

    Language:English  

    Country:Japan  

  • Vacancies in III-Nitrides (I): Formation under Reconstructed Surfaces International conference

    Keitaro Tateyama, Yoshihiro Kangawa, Akira Kusaba, Takahiro Kawamura

    10th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA 2024)  2024.4 

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    Event date: 2024.4

    Language:English  

    Country:Japan  

  • Ab initio thermodynamic study of the metallic surface wetting layer during MBE (In)GaN growth and its consequences for dopants incorporation International conference

    Pawel Kempisty, Karol Kawka, Akira Kusaba, Yoshihiro Kangawa

    14th International Conference on Nitride Semiconductors (ICNS-14)  2023.11 

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    Event date: 2023.11

    Language:English  

    Country:Japan  

  • Theoretical analysis of TMI degradation pathway in InN MOVPE growth International conference

    Yuya Nagashima, Hirotaka Watanabe, Syugo Nitta, Akira Kusaba, Yoshihiro Kangawa, Kenji Shiraishi

    14th International Conference on Nitride Semiconductors (ICNS-14)  2023.11 

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    Event date: 2023.11

    Language:English  

    Country:Japan  

  • Bayesian optimization and Ising model in DFT calculations of surface reconstruction Invited International conference

    Akira Kusaba

    24th Asian Workshop on First-Principles Electronic Structure Calculations (ASIAN-24)  2023.11 

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    Event date: 2023.10 - 2023.11

    Language:English  

    Country:China  

  • Data Assimilation in Semiconductor Crystal Growth: Chemical Reaction Network Modeling Invited International conference

    Akira Kusaba

    Global Plasma Forum in Aomori  2023.10 

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    Event date: 2023.10

    Language:English  

    Country:Japan  

  • InN MOVPE成長におけるTMI分解経路の理論的解析

    長嶋佑哉, 新田州吾, 草場彰, 寒川義裕, 白石賢二

    第84回応用物理学会秋季学術講演会  2023.9 

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    Event date: 2023.9

    Language:Japanese  

    Venue:熊本   Country:Japan  

  • Theoretical exploration of widegap materials with the corundum structure for heteroepitaxy on α-Ga2O3 International conference

    2023.8 

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    Event date: 2023.7 - 2023.8

    Language:English  

    Venue:Napules   Country:Italy  

  • Ising model-based analysis of the GaN(0001) surface reconstructed structures sampled from Bayesian optimization International conference

    20th International Conference on Crystal Growth and Epitaxy (ICCGE-20)  2023.7 

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    Event date: 2023.7 - 2023.8

    Language:English  

    Country:Italy  

  • スパッタAlN膜の高温アニールプロセスにおけるスパースモデリング

    原太一, 草場彰, 寒川義裕, 三宅秀人

    第15回ナノ構造エピタキシャル成長講演会  2023.6 

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    Event date: 2023.6

    Language:Japanese  

    Venue:山形   Country:Japan  

  • ベイズ最適化による半導体表面混合状態の研究

    草場 彰

    第2回スーパーコンピュータ「富岳」成果創出加速プログラム研究交流会  2023.3 

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    Event date: 2023.3

    Language:Japanese  

    Venue:オンライン   Country:Japan  

  • AlN・InN MOVPE成長におけるTMA・TMI分解経路の理論的解析

    長嶋佑哉, 赤石大地, 新田州吾, 草場彰, 寒川義裕, 白石賢二

    第14回ナノ構造エピタキシャル成長講演会  2022.11 

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    Event date: 2022.11

    Language:Japanese  

    Venue:宇部   Country:Japan  

  • 窒化物半導体MOVPEにおける表面相図:不純物混入の寄与

    木原楓太, 草場彰, 寒川義裕

    第14回ナノ構造エピタキシャル成長講演会  2022.11 

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    Event date: 2022.11

    Language:Japanese  

    Venue:宇部   Country:Japan  

  • Ab Initio Studies on TMA and TMI Decomposition during MOVPE Growth

    Yuya Nagashima, Daichi Akaishi, Shugo Nitta, Akira Kusaba, Yoshihiro Kangawa, Kenji Shiraishi

    2022.10 

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    Event date: 2022.10

    Language:Japanese  

    Country:Other  

  • Modelling interlayer diffusion in III-nitride hetero interface

    Koyo Miyamoto, Akira Kusaba, Yoshihiro Kangawa

    2022.10 

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    Event date: 2022.10

    Language:Japanese  

    Country:Other  

  • Growth Simulation of GaN MOVPE Based on Rate Equation Analysis

    Masaki Sano, Yuya Nagashima, Akira Kusaba, Yoshihiro Kangawa, Kenji Shiraishi

    2022.10 

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    Event date: 2022.10

    Language:Japanese  

    Country:Other  

  • Estimation of optimal conditions for semiconductor nanowires by MBE growth using machine learning

    Taichi Hara, Yuichiro Maeda, Akira Kusaba, Yoshihiro Kangawa, Fumitaro Ishikawa, Tetsuya Okuyama

    2022.10 

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    Event date: 2022.10

    Language:Japanese  

    Country:Other  

  • Tuning of Ab Initio Reaction Rate in GaN Metalorganic Vapor Phase Epitaxy by Multiobjective Genetic Algorithm with High-Resolution Mass Spectrometry Data International conference

    Akira Kusaba, Zheng Ye, Shugo Nitta, Kenji Shiraishi, Tetsuji Kuboyama, Yoshihiro Kangawa

    International Workshop on Nitride Semiconductors 2022 (IWN 2022)  2022.10 

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    Event date: 2022.10

    Language:English  

    Country:Germany  

    Tuning of Ab Initio Reaction Rate in GaN Metalorganic Vapor Phase Epitaxy by Multiobjective Genetic Algorithm with High-Resolution Mass Spectrometry Data

  • Data-driven approach to predict growth conditions of compound semiconductor nanowires for optical devices by molecular beam epitaxy International conference

    Taichi Hara, Yuichiro Maeda, Akira Kusaba, Yoshihiro Kangawa, Fumitaro Ishikawa, Tetsuya Okuyama

    IUMRS-ICYRAM 2022  2022.8 

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    Event date: 2022.8

    Language:English  

    Country:Japan  

    Data-driven approach to predict growth conditions of compound semiconductor nanowires for optical devices by molecular beam epitaxy

  • 熱力学的解析によるp型GaNのHVPE法におけるキャリアガスの特定

    長嶋佑哉, 木村友哉, 洗平昌晃, 長川健太, 草場彰, 寒川義裕, 白石賢二

    第69回応用物理学会春季学術講演会  2022.3 

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    Event date: 2022.3

    Language:Japanese  

    Venue:相模原   Country:Other  

  • Application of Machine Learning Methods to More Quantitative GaN MOVPE Modeling Invited International conference

    Akira Kusaba

    2nd International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation (ISWGPDs 2022)  2022.1 

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    Event date: 2022.1

    Language:English  

    Country:Japan  

    Application of Machine Learning Methods to More Quantitative GaN MOVPE Modeling

  • 窒化物半導体ヘテロ界面における相互拡散メカニズムの理論検討

    宮本滉庸, 草場彰, 寒川義裕

    第13回ナノ構造エピタキシャル成長講演会  2021.12 

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    Event date: 2021.12

    Language:Japanese  

    Venue:松山(オンライン)   Country:Japan  

  • Theoretical approach to unintentional oxygen doping during MOVPE of GaN:Mg and AlN:Mg International conference

    Yoshihiro Kangawa, Akira Kusaba, Pawel Kempisty

    International Conference on Materials and Systems for Sustainability 2021 (ICMaSS 2021)  2021.11 

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    Event date: 2021.11

    Language:English  

    Country:Other  

    Theoretical approach to unintentional oxygen doping during MOVPE of GaN:Mg and AlN:Mg

  • Tuning of Reaction Rate Constants for Trimethylgallium Decomposition by Multiobjective Genetic Algorithm with High-Resolution Mass Spectrometry Data International conference

    Akira Kusaba, Yoshihiro Kangawa, Zheng Ye, Shugo Nitta, Kenji Shiraishi

    International Conference on Materials and Systems for Sustainability 2021 (ICMaSS 2021)  2021.11 

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    Event date: 2021.11

    Language:English  

    Country:Other  

    Tuning of Reaction Rate Constants for Trimethylgallium Decomposition by Multiobjective Genetic Algorithm with High-Resolution Mass Spectrometry Data

  • 結晶成長デジタルツイン―AIと計算科学からのアプローチ Invited

    草場彰, 久保山哲二, 寒川義裕

    第50回結晶成長国内会議  2021.10 

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    Event date: 2021.10

    Language:Japanese  

    Venue:オンライン   Country:Other  

  • First-principles study of Mg and O co-doping mechanism in the growth surface during GaN(0001) and AlN(0001) metalorganic vapor phase epitaxy International conference

    Akira Kusaba, Pawel Kempisty, Yoshihiro Kangawa

    32nd IUPAP Conference on Computational Physics (CCP 2021)  2021.8 

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    Event date: 2021.8

    Language:English  

    Country:Other  

    First-principles study of Mg and O co-doping mechanism in the growth surface during GaN(0001) and AlN(0001) metalorganic vapor phase epitaxy

  • Prediction of plasma turbulence using Hankel and sparsity-promoting dynamic mode decomposition International conference

    Akira Kusaba, Tetsuji Kuboyama, Kilho Shin, Makoto Sasaki, Shigeru Inagaki

    13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2021)  2021.3 

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    Event date: 2021.3

    Language:English  

    Country:Other  

    Prediction of plasma turbulence using Hankel and sparsity-promoting dynamic mode decomposition

  • Quantitative compatibility of ab initio thermodynamics with real growth processes of III nitrides semiconductors International conference

    Pawel Kempisty, Konrad Sakowski, Akira Kusaba, Yoshihiro Kangawa

    8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)  2021.3 

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    Event date: 2021.3

    Language:English  

    Country:Japan  

    Quantitative compatibility of ab initio thermodynamics with real growth processes of III nitrides semiconductors

  • プラズマ乱流データにおけるDMD固有値の高精度推定

    草場 彰

    NIFS共同研究(研究会)「プラズマインフォマティクス研究会」  2021.1 

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    Event date: 2021.1

    Language:Japanese  

    Venue:オンライン   Country:Other  

  • ab initio計算を用いたGaN MOVPEにおけるTMG分解過程へのH2とNH3による効果の理論的考察

    榊原聡真, 長川健太, 洗平昌晃, 草場彰, 寒川善裕, 白石賢二

    第26回電子デバイス界面テクノロジー研究会-材料・プロセス・デバイス特性の物理-  2021.1 

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    Event date: 2021.1

    Language:Japanese  

    Venue:オンライン   Country:Other  

  • Ab initio-based approach to GaN HVPE and THVPE processes: p-type doping and facet stability International conference

    Daichi Yosho, Yuriko Matsuo, Pawel Kempisty, Akira Kusaba, Yoshihiro Kangawa

    International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021 (ISWGPDs 2021)  2021.1 

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    Event date: 2021.1

    Language:English  

    Country:Other  

    Ab initio-based approach to GaN HVPE and THVPE processes: p-type doping and facet stability

  • Theoretical study of the effects of H2 and NH3 on the TMG decomposition process in GaN crystal growth International conference

    Soma Sakakibara, Kenta Chokawa, Masaaki Araidai, Akira Kusaba, Yoshihiro Kangawa, Kenji Shiraishi

    International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021 (ISWGPDs 2021)  2021.1 

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    Event date: 2021.1

    Language:English  

    Country:Other  

    Theoretical study of the effects of H2 and NH3 on the TMG decomposition process in GaN crystal growth

  • More quantitative prediction of III-nitride growth: theoretical and data-driven approaches Invited International conference

    Akira Kusaba, Yoshihiro Kangawa

    International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021 (ISWGPDs 2021)  2021.1 

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    Event date: 2021.1

    Language:English  

    Country:Other  

    More quantitative prediction of III-nitride growth: theoretical and data-driven approaches

  • Predictive Nonlinear Modeling by Koopman Mode Decomposition International conference

    Akira Kusaba, Kilho Shin, Dave Shepard, Tetsuji Kuboyama

    15th International Workshop on Spatial and Spatiotemporal Data Mining (SSTDM '20) In Cooperation with IEEE ICDM 2020  2020.11 

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    Event date: 2020.11

    Language:English  

    Country:Other  

    Predictive Nonlinear Modeling by Koopman Mode Decomposition

    Repository Public URL: https://hdl.handle.net/2324/7183512

  • Unsupervised Clustering based on Feature-value / Instance Transposition Selection International conference

    Akira Kusaba, Takako Hashimoto, Kilho Shin, David Shepard, Tetsuji Kuboyama

    IEEE Region 10 Conference 2020 (TENCON 2020)  2020.11 

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    Event date: 2020.11

    Language:English  

    Country:Other  

    Unsupervised Clustering based on Feature-value / Instance Transposition Selection

  • GaN MOVPEにおけるTMG分解過程へのH2とNH3による効果の理論的考察

    榊原聡真, 長川健太, 洗平昌晃, 草場彰, 寒川義裕, 白石賢二

    第49回結晶成長国内会議  2020.11 

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    Event date: 2020.11

    Language:Japanese  

    Venue:オンライン   Country:Other  

  • 機械学習によるスパッタAlN膜の高温アニール最適プロセス探索

    草場彰, 寒川義裕, 則松研二, 三宅秀人

    第49回結晶成長国内会議  2020.11 

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    Event date: 2020.11

    Language:Japanese  

    Venue:オンライン   Country:Other  

  • Long-Time Dynamic Mode Decomposition of Plasma Turbulence International conference

    Akira Kusaba, Tetsuji Kuboyama, Kilho Shin, Shigeru Inagaki

    29th International Toki Conference on Plasma and Fusion Research (ITC-29)  2020.10 

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    Event date: 2020.10

    Language:English  

    Country:Japan  

    Long-Time Dynamic Mode Decomposition of Plasma Turbulence

  • Data Analysis for Sputtering and High-Temperature Annealing in AlN Templates Fabrication

    Akira Kusaba, Yoshihiro Kangawa, Kenji Norimatsu, Hideto Miyake

    2020.10 

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    Event date: 2020.10

    Language:Japanese  

    Country:Other  

  • らせん転位とMg不純物との複合体を含むGaNの第一原理電子構造解析 Invited

    中野崇志, 原嶋庸介, 長川健太, 洗平昌晃, 白石賢二, 押山淳, 草場彰, 寒川義裕, 田中敦之, 本田善央, 天野浩

    第67回応用物理学会春季学術講演会  2020.3 

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    Event date: 2020.3

    Language:Japanese  

    Venue:東京   Country:Japan  

  • Twitter Topic Progress Visualization using Micro-Clustering International conference

    Takako Hashimoto, Akira Kusaba, Dave Shepard, Tetsuji Kuboyama, Kilho Shin, Takeaki Uno

    9th International Conference on Pattern Recognition Applications and Methods (ICPRAM 2020)  2020.2 

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    Event date: 2020.2

    Language:English  

    Country:Malta  

    Twitter Topic Progress Visualization using Micro-Clustering

  • GaN薄膜におけるらせん転位およびMg不純物と電子物性の相関:第一原理計算に基づく理論解析

    中野崇志, 原嶋庸介, 大河内勇斗, 長川健太, 洗平昌晃, 白石賢二, 押山淳, 草場彰, 寒川義裕, 田中敦之, 本田善央, 天野浩

    第25回電子デバイス界面テクノロジー研究会-材料・プロセス・デバイス特性の物理-  2020.2 

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    Event date: 2020.1 - 2020.2

    Language:Japanese  

    Venue:静岡   Country:Japan  

  • 気相反応の観点から見たGaN MOVPE中の炭素混入の原因の解明

    大河内勇斗, 長川健太, 洗平昌晃, 草場彰, 寒川義裕, 柿本浩一, 叶正, 新田州吾, 本田善央, 天野浩, 白石賢二

    第25回電子デバイス界面テクノロジー研究会-材料・プロセス・デバイス特性の物理-  2020.1 

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    Event date: 2020.1 - 2020.2

    Language:Japanese  

    Venue:静岡   Country:Japan  

  • DMD法を用いたPANTAプラズマ乱流データの非定常解析

    草場 彰

    NIFS共同研究(研究会)「プラズマの複雑現象を対象としたデータマイニングの活用」  2019.12 

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    Event date: 2019.12

    Language:Japanese  

    Venue:土岐   Country:Japan  

  • スパース動的モード分解によるプラズマ乱流データの解析

    草場彰, 久保山哲二, 寒川義裕, 稲垣滋

    第36回プラズマ・核融合学会年会  2019.12 

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    Event date: 2019.11 - 2019.12

    Language:Japanese  

    Venue:春日井   Country:Japan  

  • The Electronic State Behavior of the Mg-Segregated Dislocation in GaN International conference

    Takashi Nakano, Yosuke Harashima, Kenta Chokawa, Masaaki Araidai, Kenji Shiraishi, Atsushi Oshiyama, Akira Kusaba, Yoshihiro Kangawa, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano

    9th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2019)  2019.11 

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    Event date: 2019.11

    Language:English  

    Country:Japan  

    The Electronic State Behavior of the Mg-Segregated Dislocation in GaN

  • Theoretical Study of the Origins of Carbon Impurities on GaN MOVPE from a Gas Phase Reaction Perspective ~ Incorporation of Ga and C Related Molecules ~ International conference

    Yuto Okawachi, Kenta Chokawa, Masaaki Araidai, Akira Kusaba, Yoshihiro Kangawa, Koichi Kakimoto, Zheng Ye, Yoshio Honda, Shugo Nitta, Hiroshi Amano, Kenji Shiraishi

    9th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2019)  2019.11 

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    Event date: 2019.11

    Language:English  

    Country:Japan  

    Theoretical Study of the Origins of Carbon Impurities on GaN MOVPE from a Gas Phase Reaction Perspective ~ Incorporation of Ga and C Related Molecules ~

  • GaN Crystal Growth Multi Physics Simulation With Gas Phase Chemical Reaction International conference

    Souma Sakakibara, Akira Kusaba, Masaaki Araidai, Naoya Okamoto, Katsunori Yoshimatsu, H Watanabe, Shugo Nitta, Yoshihiro Kangawa, Koichi Kakimoto, Kenji Shiraishi

    International Conference on Materials and Systems for Sustainability 2019 (ICMaSS 2019)  2019.11 

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    Event date: 2019.11

    Language:English  

    Country:Japan  

    GaN Crystal Growth Multi Physics Simulation With Gas Phase Chemical Reaction

  • Theoretical Study about the Leakage Current due to the Dislocation of Mg Segregation in GaN International conference

    Takashi Nakano, Kenta Chokawa, Yosuke Harashima, Masaaki Araidai, Kenji Shiraishi, Atsushi Oshiyama, Akira Kusaba, Yoshihiro Kangawa, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano

    International Conference on Materials and Systems for Sustainability 2019 (ICMaSS 2019)  2019.11 

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    Event date: 2019.11

    Language:English  

    Country:Japan  

    Theoretical Study about the Leakage Current due to the Dislocation of Mg Segregation in GaN

  • Study of the Origins of Carbon Impurities on Gallium Nitride MOVPE from a Gas Phase Reaction Perspective International conference

    Yuto Okawachi, Kenta Chokawa, Masaaki Araidai, Akira Kusaba, Yoshihiro Kangawa, Koichi Kakimoto, Zheng Ye, Yoshio Honda, Shugo Nitta, Hiroshi Amano, Kenji Shiraishi

    International Conference on Materials and Systems for Sustainability 2019 (ICMaSS 2019)  2019.11 

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    Event date: 2019.11

    Language:English  

    Country:Japan  

    Study of the Origins of Carbon Impurities on Gallium Nitride MOVPE from a Gas Phase Reaction Perspective

  • Time Series Electricity Consumption Analysis using Non-negative Matrix Factorization International conference

    Akira Kusaba, Tetsuji Kuboyama, Takako Hashimoto

    10th IEEE International Conference on Awareness Science and Technology (iCAST 2019)  2019.10 

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    Event date: 2019.10

    Language:English  

    Country:Japan  

    Time Series Electricity Consumption Analysis using Non-negative Matrix Factorization

  • 動的モード分解におけるモード数低減手法の実験的比較

    草場彰, 久保山哲二

    人工知能学会第110回人工知能基本問題研究会  2019.9 

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    Event date: 2019.9

    Language:Japanese  

    Venue:札幌   Country:Japan  

  • MOVPE条件下におけるIII族窒化物半導体無極性面の熱力学解析

    清水紀志, 秋山亨, アブドルムィッツプラディプト, 中村浩次, 伊藤智徳, 草場彰, 寒川義裕

    第80回応用物理学会秋季学術講演会  2019.9 

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    Event date: 2019.9

    Language:Japanese  

    Venue:札幌   Country:Japan  

  • らせん転位およびMg不純物を含むGaNの電子構造解析

    中野崇志, 原嶋庸介, 長川健太, 洗平昌晃, 白石賢二, 押山淳, 草場彰, 寒川義裕, 田中敦之, 本田善央, 天野浩

    第80回応用物理学会秋季学術講演会  2019.9 

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    Event date: 2019.9

    Language:Japanese  

    Venue:札幌   Country:Japan  

  • プラズマ乱流データの動的モード分解

    草場 彰

    NIFS共同研究(研究会)「プラズマインフォマティクス研究会」  2019.9 

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    Event date: 2019.9

    Language:Japanese  

    Venue:土岐   Country:Japan  

  • Microscopic Reason for the Leakage Current due to the Mg-Attached Dislocation in GaN International conference

    Takashi Nakano, Kenta Chokawa, Yosuke Harashima, Masaaki Araidai, Kenji Shiraishi, Atsushi Oshiyama, Akira Kusaba, Yoshihiro Kangawa, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano

    International Conference on Solid State Devices and Materials 2019 (SSDM 2019)  2019.9 

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    Event date: 2019.9

    Language:English  

    Country:Japan  

    Microscopic Reason for the Leakage Current due to the Mg-Attached Dislocation in GaN

  • 第一原理計算と熱力学的解析によるGaN MOVPE成長中の炭素取り込みの考察

    大河内勇斗, 長川健太, 洗平昌晃, 草場彰, 寒川義裕, 柿本浩一, Zheng Ye, 本田善央, 新田州吾, 天野浩, 白石賢二

    ポスト「京」プロジェクト重点課題(7)「次世代の産業を支える新機能デバイス・高性能材料の創成」第5回シンポジウム  2019.8 

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    Event date: 2019.8

    Language:Japanese  

    Venue:東京   Country:Japan  

  • 第一原理計算によるGaNらせん転位中のMg不純物の研究

    中野崇志, 原嶋庸介, 長川健太, 洗平昌晃, 白石賢二, 押山淳, 草場彰, 寒川義裕, 田中敦之, 本田善央, 天野浩

    ポスト「京」プロジェクト重点課題(7)「次世代の産業を支える新機能デバイス・高性能材料の創成」第5回シンポジウム  2019.8 

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    Event date: 2019.8

    Language:Japanese  

    Venue:東京   Country:Japan  

  • STUDY OF THE ORIGINS OF CARBON IMPURITIES ON GAN MOVPE FROM A GAS PHASE REACTION PERSPECTIVE International conference

    Yuto Okawachi, Kenta Chokawa, Masaaki Araidai, Akira Kusaba, Yoshihiro Kangawa, Koichi Kakimoto, Sheng Yo, Yoshio Honda, Shugo Nitta, Hiroshi Amano, Kenji Shiraishi

    19th International Conference on Crystal Growth and Epitaxy (ICCGE-19)  2019.7 

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    Event date: 2019.7 - 2019.8

    Language:English  

    Country:United States  

    STUDY OF THE ORIGINS OF CARBON IMPURITIES ON GAN MOVPE FROM A GAS PHASE REACTION PERSPECTIVE

  • Electronic Properties of GaN Nanopipe Threading Dislocation with M-Plane Surface International conference

    Takashi Nakano, Kenta Chokawa, Masaaki Araidai, Kenji Shiraishi, Atsushi Oshiyama, Shigeyoshi Usami, Akira Kusaba, Yoshihiro Kangawa, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano

    13th International Conference on Nitride Semiconductors (ICNS-13)  2019.7 

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    Event date: 2019.7

    Language:English  

    Country:United States  

    Electronic Properties of GaN Nanopipe Threading Dislocation with M-Plane Surface

  • Electronic structure analysis of core structures of threading dislocations in GaN International conference

    Takashi Nakano, Kenta Chokawa, Masaaki Araidai, Kenji Shiraishi, Atsushi Oshiyama, Akira Kusaba, Yoshihiro Kangawa, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano

    Compound Semiconductor Week 2019 (CSW 2019)  2019.5 

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    Event date: 2019.5

    Language:English  

    Country:Japan  

    Electronic structure analysis of core structures of threading dislocations in GaN

  • GaN薄膜における貫通転位およびナノパイプm壁面の第一原理計算に基づく電子状態解析

    中野崇志, 長川健太, 洗平昌晃, 白石賢二, 押山淳, 宇佐美茂佳, 草場彰, 寒川義裕, 田中敦之, 本田善央, 天野浩

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date: 2019.3

    Language:Japanese  

    Venue:東京   Country:Japan  

  • 縦型結晶成長装置におけるGaN MOVPEシミュレーション

    富澤巧, 川上賢人, 櫻井照夫, 草場彰, 岡本直也, 芳松克則, 醍醐佳明, 水島一郎, 依田孝, 寒川義裕, 柿本浩一, 白石賢二

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date: 2019.3

    Language:Japanese  

    Venue:東京   Country:Japan  

  • 気相反応から考えるGaN MOVPEにおける炭素混入機構

    大河内勇斗, 長川健太, 洗平昌晃, 草場彰, 寒川義裕, 柿本浩一, 白石賢二

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date: 2019.3

    Language:Japanese  

    Venue:東京   Country:Japan  

  • 化学反応を含むGaN結晶成長流体シミュレーション手法の開発

    榊原聡真, 川上賢人, 高村昴, 洗平昌晃, 草場彰, 岡本直也, 芳松克則, 寒川義裕, 柿本浩一, 白石賢二

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date: 2019.3

    Language:Japanese  

    Venue:東京   Country:Japan  

  • MOVPE法のGaN結晶成長3次元マルチフィジックスシミュレーション

    川上賢人, 高村昴, 草場彰, 芳松克則, 岡本直也, 寒川義裕, 柿本浩一, 白石賢二

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date: 2019.3

    Language:Japanese  

    Venue:東京   Country:Japan  

  • GaNにおける貫通転位およびナノパイプm壁面の電子状態解析

    中野崇志, 長川健太, 大河内勇斗, 洗平昌晃, 白石賢二, 押山淳, 草場彰, 寒川義裕, 田中敦之, 本田善央, 天野浩

    第24回電子デバイス界面テクノロジー研究会-材料・プロセス・デバイス特性の物理-  2019.1 

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    Event date: 2019.1

    Language:Japanese  

    Venue:静岡   Country:Japan  

  • Monte Carlo study of influence of MOVPE growth condition on carbon concentration in GaN epi-layer International conference

    Satoshi Yamamoto, Yuya Inatomi, Akira Kusaba, Pawel Kempisty, Kenji Shiraishi, Yoshihiro Kangawa

    International Workshop on Nitride Semiconductors 2018 (IWN 2018)  2018.11 

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    Event date: 2018.11

    Language:English  

    Country:Japan  

    Monte Carlo study of influence of MOVPE growth condition on carbon concentration in GaN epi-layer

  • Thermodynamic analysis of semipolar GaN and AlN under metalorganic vapor phase epitaxy growth condition International conference

    Yuki Seta, Abdul Muizz Pradipto, Toru Akiyama, Kohji Nakamura, Tomonori Ito, Akira Kusaba, Yoshihiro Kangawa

    International Workshop on Nitride Semiconductors 2018 (IWN 2018)  2018.11 

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    Event date: 2018.11

    Language:English  

    Country:Japan  

    Thermodynamic analysis of semipolar GaN and AlN under metalorganic vapor phase epitaxy growth condition

  • Non-equilibrium analysis of CH4 adsorption on GaN(0001) and (000-1): the growth orientation dependence of the C impurity concentration International conference

    Akira Kusaba, Guanchen Li, Pawel Kempisty, Michael R. von Spakovsky, Yoshihiro Kangawa

    International Workshop on Nitride Semiconductors 2018 (IWN 2018)  2018.11 

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    Event date: 2018.11

    Language:English  

    Country:Japan  

    Non-equilibrium analysis of CH4 adsorption on GaN(0001) and (000-1): the growth orientation dependence of the C impurity concentration

  • Multiphysics simulation of GaN MOVPE: Flow influence on GaN growth-orientation International conference

    Subaru Komura, Kento Kawakami, Akira Kusaba, Katsunori Yoshimatsu, Naoya Okamoto, Yoshihiro Kangawa, Koichi Kakimoto, Kenji Shiraishi

    International Workshop on Nitride Semiconductors 2018 (IWN 2018)  2018.11 

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    Event date: 2018.11

    Language:English  

    Country:Japan  

    Multiphysics simulation of GaN MOVPE: Flow influence on GaN growth-orientation

  • GaN結晶成長過程における炭素混入メカニズムの理論的解明

    大河内勇斗, 長川健太, 洗平昌晃, 草場彰, 寒川義裕, 柿本浩一, 白石賢二

    第47回結晶成長国内会議  2018.11 

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    Event date: 2018.10 - 2018.11

    Language:Japanese  

    Venue:仙台   Country:Japan  

  • 表面再構成構造を考慮したGaN MOVPEのマルチフィジックス流動シミュレーション

    川上賢人, 高村昴, 草場彰, 芳松克則, 岡本直也, 寒川義裕, 柿本浩一, 白石賢二

    第47回結晶成長国内会議  2018.11 

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    Event date: 2018.10 - 2018.11

    Language:Japanese  

    Venue:仙台   Country:Japan  

  • Flow influence on GaN MOVPE growth-orientation International conference

    Subaru Komura, Kento Kawakami, Yoshihiro Yamamoto, Akira Kusaba, Katsunori Yoshimatsu, Naoya Okamoto, Yoshihiro Kangawa, Koichi Kakimoto, Kenji Shiraishi

    9th International Workshop on Modeling in Crystal Growth (IWMCG-9)  2018.10 

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    Event date: 2018.10

    Language:English  

    Country:United States  

    Flow influence on GaN MOVPE growth-orientation

  • Methodology for Multiphysics Flow Simulation in GaN MOVPE using Thermodynamic Analysis and First Principles Calculations for GaN Deposition International conference

    Kento Kawakami, Subaru Komura, Akira Kusaba, Katsunori Yoshimatu, Naoya Okamoto, Yoshihiro Kangawa, Koichi Kakimoto, Kenji Shiraishi

    9th International Workshop on Modeling in Crystal Growth (IWMCG-9)  2018.10 

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    Event date: 2018.10

    Language:English  

    Country:United States  

    Methodology for Multiphysics Flow Simulation in GaN MOVPE using Thermodynamic Analysis and First Principles Calculations for GaN Deposition

  • 窒化ガリウム極性面におけるメタン吸着確率と炭素不純物取り込み Invited

    草場彰, 李冠辰, パヴェウ・ケンピスティ, マイケル・フォン・スパコフスキー, 寒川義裕

    日本学術振興会第162委員会第110回研究会・特別公開シンポジウム「紫外発光デバイスの最前線と将来展望」  2018.9 

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    Event date: 2018.9

    Language:Japanese  

    Venue:東京   Country:Japan  

  • 有機金属気相エピタキシー成長における熱力学解析:半極性面の検討

    瀬田雄基, アブドルムィッツプラディプト, 秋山亨, 中村浩次, 伊藤智徳, 草場彰, 寒川義裕

    第79回応用物理学会秋季学術講演会  2018.9 

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    Event date: 2018.9

    Language:Japanese  

    Venue:名古屋   Country:Japan  

  • Monte Carlo simulation of carbon incorporation in GaN MOVPE International conference

    Satoshi Yamamoto, Yuya Inatomi, Akira Kusaba, Pawel Kempisty, Yoshihiro Kangawa

    2018.8 

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    Event date: 2018.8

    Language:English  

    Country:Poland  

    Monte Carlo simulation of carbon incorporation in GaN MOVPE

  • Relationship between the CH4 Adsorption Probability and the C Impurity Concentration in the Polar-GaN MOVPE System International conference

    Akira Kusaba, Guanchen Li, Michael R. von Spakovsky, Pawel Kempisty, Yoshihiro Kangawa

    2018.8 

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    Event date: 2018.8

    Language:English  

    Country:Poland  

    Relationship between the CH4 Adsorption Probability and the C Impurity Concentration in the Polar-GaN MOVPE System

  • GaN-MOVPE成長におけるCH4吸着確率とC不純物濃度の面方位依存性

    草場彰, 李冠辰, パヴェウ・ケンピスティ, マイケル・フォン・スパコフスキー, 寒川義裕

    第10回ナノ構造・エピタキシャル成長講演会  2018.7 

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    Event date: 2018.7

    Language:Japanese  

    Venue:名古屋   Country:Japan  

  • Formation Mechanism of Singular Structure in AlInN Layer Grown on M-GaN Substrate by MOVPE Invited International conference

    Yuya Inatomi, Akira Kusaba, Yoshihiro Kangawa, Kazunobu Kojima, Shigefusa Chichibu

    6th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA '18)  2018.4 

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    Event date: 2018.4

    Language:English  

    Country:Japan  

    Formation Mechanism of Singular Structure in AlInN Layer Grown on M-GaN Substrate by MOVPE

  • MOVPE成長m面AlInN/GaNヘテロ構造における特異構造(2)

    稲富悠也, 草場彰, 柿本浩一, 寒川義裕, 小島一信, 秩父重英

    第65回応用物理学会春季学術講演会  2018.3 

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    Event date: 2018.3

    Language:Japanese  

    Venue:東京   Country:Japan  

  • Driving force for m-plane GaN MOVPE: a new thermodynamic modeling International conference

    Akira Kusaba, Yoshihiro Kangawa, Kenji Shiraishi

    10th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2018)  2018.3 

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    Event date: 2018.3

    Language:English  

    Country:Japan  

    Driving force for m-plane GaN MOVPE: a new thermodynamic modeling

  • GaN MOVPE法における基板面方位依存性を考慮した流れの影響II

    高村昴, 川上賢人, 山本芳裕, 草場彰, 芳松克則, 岡本直也, 寒川義裕, 柿本浩一, 白石賢二

    第46回結晶成長国内会議  2017.11 

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    Event date: 2017.11

    Language:Japanese  

    Venue:浜松   Country:Japan  

  • GaN(0001)におけるNH3吸着過程の非平衡量子熱力学モデリング:付着係数の理論解析

    草場彰, 李冠辰, マイケル・ヴォン・スパコフスキー, 寒川義裕, 柿本浩一

    第46回結晶成長国内会議  2017.11 

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    Event date: 2017.11

    Language:Japanese  

    Venue:浜松   Country:Japan  

  • GaN MOVPE法における基板面方位依存性を考慮した流れの影響I

    川上賢人, 高村昴, 山本芳裕, 草場彰, 芳松克則, 岡本直也, 寒川義裕, 柿本浩一, 白石賢二

    第46回結晶成長国内会議  2017.11 

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    Event date: 2017.11

    Language:Japanese  

    Venue:浜松   Country:Japan  

  • Adsorption of ammonia in III-nitrides vapor phase epitaxy: theoretical approach based on steepest-entropy-ascent quantum thermodynamics International conference

    Akira Kusaba, Guanchen Li, Michael R. von Spakovsky, Yoshihiro Kangawa

    International Workshop on UV Materials and Devices 2017 (IWUMD 2017)  2017.11 

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    Event date: 2017.11

    Language:English  

    Country:Japan  

    Adsorption of ammonia in III-nitrides vapor phase epitaxy: theoretical approach based on steepest-entropy-ascent quantum thermodynamics

  • Thermodynamic Modeling of GaN MOVPE: Contribution of Surface State International conference

    Akira Kusaba, Yoshihiro Kangawa, Pawel Kempisty, Kenji Shiraishi, Koichi Kakimoto, Akinori Koukitu

    International Conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017)  2017.9 

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    Event date: 2017.9 - 2017.10

    Language:English  

    Country:Japan  

    Thermodynamic Modeling of GaN MOVPE: Contribution of Surface State

  • Steepest-entropy-ascent quantum thermodynamic behavior of ammonia chemical adsorption on GaN(0001) surfaces under MOVPE International conference

    Akira Kusaba, Guanchen Li, Michael R. von Spakovsky, Yoshihiro Kangawa, Koichi Kakimoto

    E-MRS 2017 Fall Meeting  2017.9 

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    Event date: 2017.9

    Language:English  

    Country:Poland  

    Steepest-entropy-ascent quantum thermodynamic behavior of ammonia chemical adsorption on GaN(0001) surfaces under MOVPE

  • NH3化学吸着の非平衡状態発展:最急エントロピー勾配量子熱力学モデリング

    草場彰, Guanchen Li, Michael R. von Spakovsky, 寒川義裕, 柿本浩一

    第9回ナノ構造・エピタキシャル成長講演会  2017.7 

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    Event date: 2017.7

    Language:Japanese  

    Venue:札幌   Country:Japan  

  • Influence of Growth Orientation on Driving Force for InN Deposition by MOVPE International conference

    Akira Kusaba, Yoshihiro Kangawa, Michael R. von Spakovsky, Kenji Shiraishi, Koichi Kakimoto, Akinori Koukitu

    International Workshop on Ntride Semiconductors 2016 (IWN 2016)  2016.10 

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    Event date: 2016.10

    Language:English  

    Country:United States  

    Influence of Growth Orientation on Driving Force for InN Deposition by MOVPE

  • Contribution of lattice constraint to indium incorporation into coherently grown InGaN International conference

    Takuya Tamura, Akira Kusaba, Yoshihiro Kangawa, Tomonori Ito, Tadeusz Suski, Koichi Kakimoto, Akinori Koukitu

    18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)  2016.8 

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    Event date: 2016.8

    Language:English  

    Country:Japan  

    Contribution of lattice constraint to indium incorporation into coherently grown InGaN

  • Thermodynamic analysis of InN metalorganic vapor phase epitaxy: influence of growth orientation and surface reconstruction International conference

    Akira Kusaba, Yoshihiro Kangawa, Koichi Kakimoto, Kenji Shiraishi, Hiroshi Amano, Akinori Koukitu

    18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)  2016.8 

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    Event date: 2016.8

    Language:English  

    Country:Japan  

    Thermodynamic analysis of InN metalorganic vapor phase epitaxy: influence of growth orientation and surface reconstruction

  • InおよびN極性InN有機金属気相成長の熱力学解析

    草場彰, 寒川義裕, 柿本浩一, 白石賢二, 纐纈明伯

    第35回電子材料シンポジウム  2016.7 

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    Event date: 2016.7

    Language:Japanese  

    Venue:滋賀   Country:Japan  

  • InN(0001)面および(000-1)面MOVPE成長の熱力学解析

    草場彰, 寒川義裕, 白石賢二, 柿本浩一, 纐纈明伯

    第8回窒化物半導体結晶成長講演会  2016.5 

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    Event date: 2016.5

    Language:Japanese  

    Venue:京都   Country:Japan  

  • Ab initio-based approach to surface reconstruction on InN(0001) during induced-pressure MOVPE International conference

    Akira Kusaba, Yoshihiro Kangawa, Yoshio Honda, Hiroshi Amano, Koichi Kakimoto

    6th International Symposium on Growth of III-Nitrides (ISGN-6)  2015.11 

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    Event date: 2015.11

    Language:English  

    Country:Japan  

    Ab initio-based approach to surface reconstruction on InN(0001) during induced-pressure MOVPE

  • Relationship between stability of facet surfaces and incorporation of zinc-blende phase in InN during pressurized reactor MOVPE: A theoretical approach International conference

    Akira Kusaba, Yoshihiro Kangawa, Stanislaw Krukowski, Koishi Kakimoto

    5th European Conference on Crystal Growth (ECCG-5)  2015.9 

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    Event date: 2015.9

    Language:English  

    Country:Italy  

    Relationship between stability of facet surfaces and incorporation of zinc-blende phase in InN during pressurized reactor MOVPE: A theoretical approach

  • Surface Energy and Facet Formation in InN films grown by Pressurized-Reactor MOVPE

    Akira Kusaba, Yoshihiro Kangawa, Stanislaw Krukowski, Takeshi Kimura, Tomoyuki Tanikawa, Ryuji Katayama, Takashi Matsuoka, Koichi Kakimoto

    2015.7 

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    Event date: 2015.7

    Language:Japanese  

    Country:Japan  

  • AlN固体ソース溶液成長における固‐液界面形状のその場観察

    草場彰, 住吉央朗, 寒川義裕, 三宅秀人, 柿本浩一

    第7回窒化物半導体結晶成長講演会  2015.5 

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    Event date: 2015.5

    Language:Japanese  

    Venue:仙台   Country:Japan  

  • InN加圧MOVPE成長における成長形と異相混入:表面エネルギーの理論解析

    草場彰, 寒川義裕, 柿本浩一

    第7回窒化物半導体結晶成長講演会  2015.5 

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    Event date: 2015.5

    Language:Japanese  

    Venue:仙台   Country:Japan  

  • Wettability-Driven Water Condensation at the Micron and Submicron Scale International conference

    Yutaka Yamada, Akira Kusaba, Tatsuya Ikuta, Takashi Nishiyama, Koji Takahashi, Yasuyuki Takata

    15th International Heat Transfer Conference (IHTC-15)  2014.8 

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    Event date: 2014.8

    Language:English  

    Country:Japan  

    Wettability-Driven Water Condensation at the Micron and Submicron Scale

  • グラファイト面上におけるサブミクロンスケールの液滴核生成と成長

    山田寛, 草場彰, 生田竜也, 西山貴史, 高橋厚史, 高田保之

    第51回日本伝熱シンポジウム  2014.5 

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    Event date: 2014.5

    Language:Japanese  

    Venue:浜松   Country:Japan  

  • Growth and Coalescence of Condensed Microdroplets on Graphite Surface International conference

    Yutaka Yamada, Akira Kusaba, Tatsuya Ikuta, Takashi Nishiyama, Koji Takahashi, Yasuyuki Takata

    5th International Conference on Heat Transfer and Fluid Flow in Microscale (HTFFM-V)  2014.4 

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    Event date: 2014.4

    Language:English  

    Country:France  

    Growth and Coalescence of Condensed Microdroplets on Graphite Surface

  • ESEMを用いたグラファイト面上の液滴凝縮過程に関する研究

    山田寛, 草場彰, 生田竜也, 西山貴史, 高橋厚史, 高田保之

    日本機械学会熱工学コンファレンス2013  2013.10 

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    Event date: 2013.10

    Language:Japanese  

    Venue:青森   Country:Japan  

  • Microscopic Mechanism of Water Condensation on HOPG International conference

    Yutaka Yamada, Akira Kusaba, Tatsuya Ikuta, Takashi Nishiyama, Koji Takahashi, Yasuyuki Takata

    International Symposium on Innovative Materials for Processes in Energy Systems 2013 (IMPRES 2013)  2013.9 

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    Event date: 2013.9

    Language:English  

    Country:Japan  

    Microscopic Mechanism of Water Condensation on HOPG

  • スパースモデリングを用いたスパッタAlN膜の高温アニールプロセスの条件探索

    原太一, 草場彰, 寒川義裕, 三宅秀人

    第14回半導体材料・デバイスフォーラム  2023.12 

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    Language:Japanese  

    Venue:飯塚   Country:Japan  

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MISC

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Professional Memberships

  • 日本結晶成長学会

  • 応用物理学会

Academic Activities

  • NEDO技術委員

    Role(s): Review, evaluation

    新エネルギー・産業技術総合開発機構  2023.11 - 2025.3

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    Type:Scientific advice/Review 

  • NEDO技術委員

    Role(s): Review, evaluation

    新エネルギー・産業技術総合開発機構  2021.12 - 2023.3

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    Type:Scientific advice/Review 

Research Projects

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Class subject

Travel Abroad

  • 2024.6

    Staying countory name 1:Korea, Republic of   Staying institution name 1:CGCT-9

  • 2023.10 - 2023.11

    Staying countory name 1:China   Staying institution name 1:ASIAN-24

  • 2023.7 - 2023.8

    Staying countory name 1:Italy   Staying institution name 1:ICCGE-20

  • 2023.6 - 2023.7

    Staying countory name 1:Poland   Staying institution name 1:ポーランド科学アカデミー 高圧物理学研究所

  • 2023.2 - 2023.3

    Staying countory name 1:Poland   Staying institution name 1:ポーランド科学アカデミー 高圧物理学研究所

  • 2022.10

    Staying countory name 1:Germany   Staying institution name 1:IWN 2022

  • 2020.2

    Staying countory name 1:Malta   Staying institution name 1:ICPRAM 2020

  • 2018.8

    Staying countory name 1:Poland   Staying institution name 1:ISGN-7

  • 2018.3

    Staying countory name 1:Poland   Staying institution name 1:ポーランド科学アカデミー 高圧物理学研究所

  • 2017.9

    Staying countory name 1:Poland   Staying institution name 1:E-MRS 2017 Fall Meeting

  • 2016.10

    Staying countory name 1:United States   Staying institution name 1:IWN 2016

    Staying institution name 2:Virginia Tech

  • 2015.9

    Staying countory name 1:Italy   Staying institution name 1:ECCG-5

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