学生ポスター賞

2017.12   第46回結晶成長国内会議   GaN(0001)におけるNH3吸着過程の非平衡量子熱力学モデリング：付着係数の理論解析

草場彰, 李冠辰, マイケル・ヴォン・スパコフスキー, 寒川義裕, 柿本浩一

Outstanding Presentation Award

2017.10   International Conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017)  

Akira Kusaba, Yoshihiro Kangawa, Pawel Kempisty, Kenji Shiraishi, Koichi Kakimoto, Akinori Koukitu

Young Scientist Award

2015.11   6th International Symposium on Growth of III-Nitrides (ISGN-6)  

Akira Kusaba, Yoshihiro Kangawa, Yoshio Honda, Hiroshi Amano, Koichi Kakimoto

発表奨励賞

2015.5   第7回窒化物半導体結晶成長講演会   InN加圧MOVPE成長における成長形と異相混入：表面エネルギーの理論解析

草場彰, 寒川義裕, 柿本浩一

SAT Solver-Driven Approach for Validating Local Electron Counting Rule Reviewed International journal

Tetsuji Kuboyama, Akira Kusaba

Journal of Crystal Growth   650   127927   2025.1   （ ISSN:0022-0248 eISSN:1873-5002 ）

Exploration of stable atomic configurations in graphene-like BCN systems by Bayesian optimization International coauthorship

Taichi Hara, Akira Kusaba, Yoshihiro Kangawa, Tetsuji Kuboyama, David Bowler, Karol Kawka, Pawel Kempisty

arXiv:2411.04758 [cond-mat.mtrl-sci]   2024.11

Polar GaN Surfaces under Gallium Rich Conditions: Revised Thermodynamic Insights from Ab Initio Calculations Reviewed International journal

Pawel Kempisty, Karol Kawka, Akira Kusaba, Yoshihiro Kangawa

Materials   16   5982   2023.8

DFT modeling of unintentional oxygen incorporation enhanced by magnesium in GaN(0001) and AlN(0001) growth surfaces during metalorganic vapor phase epitaxy Reviewed International journal

Akira Kusaba, Romeo Marcel Kurniawan, Pawel Kempisty, Yoshihiro Kangawa

Physica Status Solidi B   2100430   2022.2

A new combination of Hankel and sparsity-promoting dynamic mode decompositions and its application to the prediction of plasma turbulence Reviewed International journal

Akira Kusaba, Tetsuji Kuboyama, Kilho Shin, Makoto Sasaki, Shigeru Inagaki

Japanese Journal of Applied Physics   61   SA1011   2021.12

Theoretical study on the effect of H2 and NH3 on trimethylgallium decomposition process in GaN MOVPE Reviewed International journal

Soma Sakakibara, Kenta Chokawa, Masaaki Araidai, Akira Kusaba, Yoshihiro Kangawa, Kenji Shiraishi

Japanese Journal of Applied Physics   60   045507   2021.4

Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE Reviewed International journal

Yoshihiro Kangawa, Akira Kusaba, Pawel Kempisty, Kenji Shiraishi, Shugo Nitta, Hiroshi Amano

Crystal Growth & Design   21   1878 - 1890   2021.2

Unsupervised Feature Value Selection Based on Explainability Reviewed International journal

Kilho Shin, Kenta Okumoto, David Lawrence Shepard, Akira Kusaba, Takako Hashimoto, Jorge Amari, Keisuke Murota, Junnosuke Takai, Tetsuji Kuboyama, Hiroaki Ohshima

Revised Selected Papers of the 12th International Conference on Agents and Artificial Intelligence (ICAART 2020)   421 - 444   2021.2

Facet stability of GaN during tri-halide vapor phase epitaxy: an ab initio-based approach Reviewed International journal

Daichi Yosho, Yuriko Matsuo, Akira Kusaba, Pawel Kempisty, Yoshihiro Kangawa, Hisashi Murakami, Akinori Koukitu

CrystEngComm   23   1423 - 1428   2021.1

Predictive Nonlinear Modeling by Koopman Mode Decomposition Reviewed International journal

Akira Kusaba, Kilho Shin, Dave Shepard, Tetsuji Kuboyama

Proceedings of the International Conference on Data Mining Workshops 2020 (ICDMW 2020)   811 - 819   2020.11

Unsupervised Clustering based on Feature-value / Instance Transposition Selection Reviewed International journal

Akira Kusaba, Takako Hashimoto, Kilho Shin, David Shepard, Tetsuji Kuboyama

Proceedings of the IEEE Region 10 Conference 2020 (TENCON 2020)   1192 - 1197   2020.11

Twitter Topic Progress Visualization using Micro-Clustering Reviewed International journal

Takako Hashimoto, Akira Kusaba, Dave Shepard, Tetsuji Kuboyama, Kilho Shin, Takeaki Uno

Proceedings of the 9th International Conference on Pattern Recognition Applications and Methods (ICPRAM 2020)   585 - 592   2020.2

Sparsity-Promoting Dynamic Mode Decomposition of Plasma Turbulence Reviewed

Akira Kusaba, Tetsuji Kuboyama, Shigeru Inagaki

Plasma and Fusion Research   15   1301001   2020.1

Thermodynamic analysis for nonpolar III-nitride surfaces under metalorganic vapor-phase epitaxy conditions Reviewed International journal

Tsunashi Shimizu, Yuki Seta, Toru Akiyama, Abdul Muizz Pradipto, Kohji Nakamura, Tomonori Ito, Akira Kusaba, Yoshihiro Kangawa

Japanese Journal of Applied Physics   59   028003   2020.1

Time Series Electricity Consumption Analysis using Non-negative Matrix Factorization Reviewed International journal

Akira Kusaba, Tetsuji Kuboyama, Takako Hashimoto

Proceedings of the 10th International Conference on Awareness Science and Technology (iCAST 2019)   1 - 6   2019.10

Thermodynamic analysis of semipolar GaN and AlN under metalorganic vapor phase epitaxy growth conditions Reviewed International journal

Yuki Seta, Abdul Muizz Pradipto, Toru Akiyama, Kohji Nakamura, Tomonori Ito, Akira Kusaba, Yoshihiro Kangawa

Japanese Journal of Applied Physics   58   SC1014   2019.5

DFT modeling of carbon incorporation in GaN(0001) and GaN(000-1) metalorganic vapor phase epitaxy Reviewed International journal

Pawel Kempisty, Yoshihiro Kangawa, Akira Kusaba, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, Hiroshi Amano

Applied Physics Letters   111   141602   2017.10

Modeling the Non-Equilibrium Process of the Chemical Adsorption of Ammonia on GaN(0001) Reconstructed Surfaces Based on Steepest-Entropy-Ascent Quantum Thermodynamics Reviewed International journal

Akira Kusaba, Guanchen Li, Michael R. von Spakovsky, Yoshihiro Kangawa, Koichi Kakimoto

Materials   10   948   2017.8

Thermodynamic analysis of (0001) and (000-1) GaN metalorganic vapor phase epitaxy Reviewed International journal

Akira Kusaba, Yoshihiro Kangawa, Pawel Kempisty, Hubert Valencia, Kenji Shiraishi, Yoshinao Kumagai, Koichi Kakimoto, Akinori Koukitu

Japanese Journal of Applied Physics   56   070304   2017.6

Theoretical approach to surface reconstruction of InN(0001) during raised-pressure metalorganic vapor-phase epitaxy Reviewed International journal

Akira Kusaba, Yoshihiro Kangawa, Yoshio Honda, Hiroshi Amano, Koichi Kakimoto

Japanese Journal of Applied Physics   55   05FM01   2016.2

Real-time observation system development for high-temperature liquid/solid interfaces and its application to solid-source solution growth of AlN Reviewed International journal

Applied Physics Express   8   065601   2015.6

ナノスケールの親水部を有する撥水面での凝縮に関する研究 Reviewed

山田寛, 草場彰, 生田竜也, 西山貴史, 高橋厚史, 高田保之

日本機械学会論文集   81   14-00495   2015.3

Wettability-Driven Water Condensation at the Micron and Submicron Scale Reviewed International journal

Yutaka Yamada, Akira Kusaba, Tatsuya Ikuta, Takashi Nishiyama, Koji Takahashi, Yasuyuki Takata

Proceedings of the 15th International Heat Transfer Conference (IHTC-15)   827 - 834   2014.8

微傾斜GaN(0001)におけるIn拡散ポテンシャル

西澤宏隆, 草場彰, 寒川義裕

第53回結晶成長国内会議  2024.11 

ステップ離脱型ファセット化マクロステップ定常成長の「ステップ」成長方向と積層欠陥抑制

阿久津典子, 草場彰, 寒川義裕

第53回結晶成長国内会議  2024.11 

量子化学計算を用いたGaN有機金属気相成長の系統的反応経路探索

杉山佳奈美, 草場彰

第53回結晶成長国内会議  2024.11 

GaN結晶中のMg拡散機構の解明：モンテカルロシミュレーションによる解析

伊藤佑太, 草場彰, 渡邉浩崇, 新田州吾, 田中敦之, 本田善央, 寒川義裕, 天野浩

第53回結晶成長国内会議  2024.11 

データ同化を用いた反応速度定数の推定によるGaN MOVPEデジタルツインの構築

生越奎太朗, 佐野雅季, 草場彰, 白石賢二, 寒川義裕

第53回結晶成長国内会議  2024.11 

Adsorption energetics and thermodynamics on semiconductor surfaces based on machine learning Invited International conference

Akira Kusaba

Materials Oceania 2024  2024.9 

Determination of Local Electron Counting Rule Satisfaction by SAT Solver International conference

Akira Kusaba, Tetsuji Kuboyama, Yoshihiro Kangawa

9th Asian Conference on Crystal Growth and Crystal Technology (CGCT-9)  2024.6 

データ駆動イジング模型による半導体表面再構成の研究 Invited

草場 彰

第16回ナノ構造エピタキシャル成長講演会  2024.5 

Vacancies in III-Nitrides (II): Diffusion near Hetero Interfaces International conference

Reo Shimauchi, Yoshihiro Kangawa, Akira Kusaba

10th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA 2024)  2024.4 

Vacancies in III-Nitrides (I): Formation under Reconstructed Surfaces International conference

Keitaro Tateyama, Yoshihiro Kangawa, Akira Kusaba, Takahiro Kawamura

10th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA 2024)  2024.4 

Ab initio thermodynamic study of the metallic surface wetting layer during MBE (In)GaN growth and its consequences for dopants incorporation International conference

Pawel Kempisty, Karol Kawka, Akira Kusaba, Yoshihiro Kangawa

14th International Conference on Nitride Semiconductors (ICNS-14)  2023.11 

Theoretical analysis of TMI degradation pathway in InN MOVPE growth International conference

Yuya Nagashima, Hirotaka Watanabe, Syugo Nitta, Akira Kusaba, Yoshihiro Kangawa, Kenji Shiraishi

14th International Conference on Nitride Semiconductors (ICNS-14)  2023.11 

Bayesian optimization and Ising model in DFT calculations of surface reconstruction Invited International conference

Akira Kusaba

24th Asian Workshop on First-Principles Electronic Structure Calculations (ASIAN-24)  2023.11 

Data Assimilation in Semiconductor Crystal Growth: Chemical Reaction Network Modeling Invited International conference

Akira Kusaba

Global Plasma Forum in Aomori  2023.10 

InN MOVPE成長におけるTMI分解経路の理論的解析

長嶋佑哉, 新田州吾, 草場彰, 寒川義裕, 白石賢二

第84回応用物理学会秋季学術講演会  2023.9 

Theoretical exploration of widegap materials with the corundum structure for heteroepitaxy on α-Ga2O3 International conference

2023.8 

Ising model-based analysis of the GaN(0001) surface reconstructed structures sampled from Bayesian optimization International conference

20th International Conference on Crystal Growth and Epitaxy (ICCGE-20)  2023.7 

スパッタAlN膜の高温アニールプロセスにおけるスパースモデリング

原太一, 草場彰, 寒川義裕, 三宅秀人

第15回ナノ構造エピタキシャル成長講演会  2023.6 

ベイズ最適化による半導体表面混合状態の研究

草場 彰

第2回スーパーコンピュータ「富岳」成果創出加速プログラム研究交流会  2023.3 

AlN・InN MOVPE成長におけるTMA・TMI分解経路の理論的解析

長嶋佑哉, 赤石大地, 新田州吾, 草場彰, 寒川義裕, 白石賢二

第14回ナノ構造エピタキシャル成長講演会  2022.11 

窒化物半導体MOVPEにおける表面相図：不純物混入の寄与

木原楓太, 草場彰, 寒川義裕

第14回ナノ構造エピタキシャル成長講演会  2022.11 

Ab Initio Studies on TMA and TMI Decomposition during MOVPE Growth

Yuya Nagashima, Daichi Akaishi, Shugo Nitta, Akira Kusaba, Yoshihiro Kangawa, Kenji Shiraishi

2022.10 

Modelling interlayer diffusion in III-nitride hetero interface

Koyo Miyamoto, Akira Kusaba, Yoshihiro Kangawa

2022.10 

Growth Simulation of GaN MOVPE Based on Rate Equation Analysis

Masaki Sano, Yuya Nagashima, Akira Kusaba, Yoshihiro Kangawa, Kenji Shiraishi

2022.10 

Estimation of optimal conditions for semiconductor nanowires by MBE growth using machine learning

Taichi Hara, Yuichiro Maeda, Akira Kusaba, Yoshihiro Kangawa, Fumitaro Ishikawa, Tetsuya Okuyama

2022.10 

Tuning of Ab Initio Reaction Rate in GaN Metalorganic Vapor Phase Epitaxy by Multiobjective Genetic Algorithm with High-Resolution Mass Spectrometry Data International conference

Akira Kusaba, Zheng Ye, Shugo Nitta, Kenji Shiraishi, Tetsuji Kuboyama, Yoshihiro Kangawa

International Workshop on Nitride Semiconductors 2022 (IWN 2022)  2022.10 

Data-driven approach to predict growth conditions of compound semiconductor nanowires for optical devices by molecular beam epitaxy International conference

Taichi Hara, Yuichiro Maeda, Akira Kusaba, Yoshihiro Kangawa, Fumitaro Ishikawa, Tetsuya Okuyama

IUMRS-ICYRAM 2022  2022.8 

熱力学的解析によるp型GaNのHVPE法におけるキャリアガスの特定

長嶋佑哉, 木村友哉, 洗平昌晃, 長川健太, 草場彰, 寒川義裕, 白石賢二

第69回応用物理学会春季学術講演会  2022.3 

Application of Machine Learning Methods to More Quantitative GaN MOVPE Modeling Invited International conference

Akira Kusaba

2nd International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation (ISWGPDs 2022)  2022.1 

窒化物半導体ヘテロ界面における相互拡散メカニズムの理論検討

宮本滉庸, 草場彰, 寒川義裕

第13回ナノ構造エピタキシャル成長講演会  2021.12 

Theoretical approach to unintentional oxygen doping during MOVPE of GaN:Mg and AlN:Mg International conference

Yoshihiro Kangawa, Akira Kusaba, Pawel Kempisty

International Conference on Materials and Systems for Sustainability 2021 (ICMaSS 2021)  2021.11 

Tuning of Reaction Rate Constants for Trimethylgallium Decomposition by Multiobjective Genetic Algorithm with High-Resolution Mass Spectrometry Data International conference

Akira Kusaba, Yoshihiro Kangawa, Zheng Ye, Shugo Nitta, Kenji Shiraishi

International Conference on Materials and Systems for Sustainability 2021 (ICMaSS 2021)  2021.11 

結晶成長デジタルツイン―AIと計算科学からのアプローチ Invited

草場彰, 久保山哲二, 寒川義裕

第50回結晶成長国内会議  2021.10 

First-principles study of Mg and O co-doping mechanism in the growth surface during GaN(0001) and AlN(0001) metalorganic vapor phase epitaxy International conference

Akira Kusaba, Pawel Kempisty, Yoshihiro Kangawa

32nd IUPAP Conference on Computational Physics (CCP 2021)  2021.8 

Prediction of plasma turbulence using Hankel and sparsity-promoting dynamic mode decomposition International conference

Akira Kusaba, Tetsuji Kuboyama, Kilho Shin, Makoto Sasaki, Shigeru Inagaki

13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2021)  2021.3 

Quantitative compatibility of ab initio thermodynamics with real growth processes of III nitrides semiconductors International conference

Pawel Kempisty, Konrad Sakowski, Akira Kusaba, Yoshihiro Kangawa

8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)  2021.3 

プラズマ乱流データにおけるDMD固有値の高精度推定

草場 彰

NIFS共同研究（研究会）「プラズマインフォマティクス研究会」  2021.1 

ab initio計算を用いたGaN MOVPEにおけるTMG分解過程へのH2とNH3による効果の理論的考察

榊原聡真, 長川健太, 洗平昌晃, 草場彰, 寒川善裕, 白石賢二

第26回電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－  2021.1 

Ab initio-based approach to GaN HVPE and THVPE processes: p-type doping and facet stability International conference

Daichi Yosho, Yuriko Matsuo, Pawel Kempisty, Akira Kusaba, Yoshihiro Kangawa

International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021 (ISWGPDs 2021)  2021.1 

Theoretical study of the effects of H2 and NH3 on the TMG decomposition process in GaN crystal growth International conference

Soma Sakakibara, Kenta Chokawa, Masaaki Araidai, Akira Kusaba, Yoshihiro Kangawa, Kenji Shiraishi

International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021 (ISWGPDs 2021)  2021.1 

More quantitative prediction of III-nitride growth: theoretical and data-driven approaches Invited International conference

Akira Kusaba, Yoshihiro Kangawa

International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021 (ISWGPDs 2021)  2021.1 

Predictive Nonlinear Modeling by Koopman Mode Decomposition International conference

Akira Kusaba, Kilho Shin, Dave Shepard, Tetsuji Kuboyama

15th International Workshop on Spatial and Spatiotemporal Data Mining (SSTDM '20) In Cooperation with IEEE ICDM 2020  2020.11 

Unsupervised Clustering based on Feature-value / Instance Transposition Selection International conference

Akira Kusaba, Takako Hashimoto, Kilho Shin, David Shepard, Tetsuji Kuboyama

IEEE Region 10 Conference 2020 (TENCON 2020)  2020.11 

GaN MOVPEにおけるTMG分解過程へのH2とNH3による効果の理論的考察

榊原聡真, 長川健太, 洗平昌晃, 草場彰, 寒川義裕, 白石賢二

第49回結晶成長国内会議  2020.11 

機械学習によるスパッタAlN膜の高温アニール最適プロセス探索

草場彰, 寒川義裕, 則松研二, 三宅秀人

第49回結晶成長国内会議  2020.11 

Long-Time Dynamic Mode Decomposition of Plasma Turbulence International conference

Akira Kusaba, Tetsuji Kuboyama, Kilho Shin, Shigeru Inagaki

29th International Toki Conference on Plasma and Fusion Research (ITC-29)  2020.10 

Data Analysis for Sputtering and High-Temperature Annealing in AlN Templates Fabrication

Akira Kusaba, Yoshihiro Kangawa, Kenji Norimatsu, Hideto Miyake

2020.10 

らせん転位とMg不純物との複合体を含むGaNの第一原理電子構造解析 Invited

中野崇志, 原嶋庸介, 長川健太, 洗平昌晃, 白石賢二, 押山淳, 草場彰, 寒川義裕, 田中敦之, 本田善央, 天野浩

第67回応用物理学会春季学術講演会  2020.3 

Twitter Topic Progress Visualization using Micro-Clustering International conference

Takako Hashimoto, Akira Kusaba, Dave Shepard, Tetsuji Kuboyama, Kilho Shin, Takeaki Uno

9th International Conference on Pattern Recognition Applications and Methods (ICPRAM 2020)  2020.2 

GaN薄膜におけるらせん転位およびMg不純物と電子物性の相関：第一原理計算に基づく理論解析

中野崇志, 原嶋庸介, 大河内勇斗, 長川健太, 洗平昌晃, 白石賢二, 押山淳, 草場彰, 寒川義裕, 田中敦之, 本田善央, 天野浩

第25回電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－  2020.2 

気相反応の観点から見たGaN MOVPE中の炭素混入の原因の解明

大河内勇斗, 長川健太, 洗平昌晃, 草場彰, 寒川義裕, 柿本浩一, 叶正, 新田州吾, 本田善央, 天野浩, 白石賢二

第25回電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－  2020.1 

DMD法を用いたPANTAプラズマ乱流データの非定常解析

草場 彰

NIFS共同研究（研究会）「プラズマの複雑現象を対象としたデータマイニングの活用」  2019.12 

スパース動的モード分解によるプラズマ乱流データの解析

草場彰, 久保山哲二, 寒川義裕, 稲垣滋

第36回プラズマ・核融合学会年会  2019.12 

The Electronic State Behavior of the Mg-Segregated Dislocation in GaN International conference

Takashi Nakano, Yosuke Harashima, Kenta Chokawa, Masaaki Araidai, Kenji Shiraishi, Atsushi Oshiyama, Akira Kusaba, Yoshihiro Kangawa, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano

9th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2019)  2019.11 

Theoretical Study of the Origins of Carbon Impurities on GaN MOVPE from a Gas Phase Reaction Perspective ~ Incorporation of Ga and C Related Molecules ~ International conference

Yuto Okawachi, Kenta Chokawa, Masaaki Araidai, Akira Kusaba, Yoshihiro Kangawa, Koichi Kakimoto, Zheng Ye, Yoshio Honda, Shugo Nitta, Hiroshi Amano, Kenji Shiraishi

9th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2019)  2019.11 

GaN Crystal Growth Multi Physics Simulation With Gas Phase Chemical Reaction International conference

Souma Sakakibara, Akira Kusaba, Masaaki Araidai, Naoya Okamoto, Katsunori Yoshimatsu, H Watanabe, Shugo Nitta, Yoshihiro Kangawa, Koichi Kakimoto, Kenji Shiraishi

International Conference on Materials and Systems for Sustainability 2019 (ICMaSS 2019)  2019.11 

Theoretical Study about the Leakage Current due to the Dislocation of Mg Segregation in GaN International conference

Takashi Nakano, Kenta Chokawa, Yosuke Harashima, Masaaki Araidai, Kenji Shiraishi, Atsushi Oshiyama, Akira Kusaba, Yoshihiro Kangawa, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano

International Conference on Materials and Systems for Sustainability 2019 (ICMaSS 2019)  2019.11 

Study of the Origins of Carbon Impurities on Gallium Nitride MOVPE from a Gas Phase Reaction Perspective International conference

Yuto Okawachi, Kenta Chokawa, Masaaki Araidai, Akira Kusaba, Yoshihiro Kangawa, Koichi Kakimoto, Zheng Ye, Yoshio Honda, Shugo Nitta, Hiroshi Amano, Kenji Shiraishi

International Conference on Materials and Systems for Sustainability 2019 (ICMaSS 2019)  2019.11 

Time Series Electricity Consumption Analysis using Non-negative Matrix Factorization International conference

Akira Kusaba, Tetsuji Kuboyama, Takako Hashimoto

10th IEEE International Conference on Awareness Science and Technology (iCAST 2019)  2019.10 

動的モード分解におけるモード数低減手法の実験的比較

草場彰, 久保山哲二

人工知能学会第110回人工知能基本問題研究会  2019.9 

MOVPE条件下におけるIII族窒化物半導体無極性面の熱力学解析

清水紀志, 秋山亨, アブドルムィッツプラディプト, 中村浩次, 伊藤智徳, 草場彰, 寒川義裕

第80回応用物理学会秋季学術講演会  2019.9 

らせん転位およびMg不純物を含むGaNの電子構造解析

中野崇志, 原嶋庸介, 長川健太, 洗平昌晃, 白石賢二, 押山淳, 草場彰, 寒川義裕, 田中敦之, 本田善央, 天野浩

第80回応用物理学会秋季学術講演会  2019.9 

プラズマ乱流データの動的モード分解

草場 彰

NIFS共同研究（研究会）「プラズマインフォマティクス研究会」  2019.9 

Microscopic Reason for the Leakage Current due to the Mg-Attached Dislocation in GaN International conference

Takashi Nakano, Kenta Chokawa, Yosuke Harashima, Masaaki Araidai, Kenji Shiraishi, Atsushi Oshiyama, Akira Kusaba, Yoshihiro Kangawa, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano

International Conference on Solid State Devices and Materials 2019 (SSDM 2019)  2019.9 

第一原理計算と熱力学的解析によるGaN MOVPE成長中の炭素取り込みの考察

大河内勇斗, 長川健太, 洗平昌晃, 草場彰, 寒川義裕, 柿本浩一, Zheng Ye, 本田善央, 新田州吾, 天野浩, 白石賢二

ポスト「京」プロジェクト重点課題（7）「次世代の産業を支える新機能デバイス・高性能材料の創成」第5回シンポジウム  2019.8 

第一原理計算によるGaNらせん転位中のMg不純物の研究

中野崇志, 原嶋庸介, 長川健太, 洗平昌晃, 白石賢二, 押山淳, 草場彰, 寒川義裕, 田中敦之, 本田善央, 天野浩

ポスト「京」プロジェクト重点課題（7）「次世代の産業を支える新機能デバイス・高性能材料の創成」第5回シンポジウム  2019.8 

STUDY OF THE ORIGINS OF CARBON IMPURITIES ON GAN MOVPE FROM A GAS PHASE REACTION PERSPECTIVE International conference

Yuto Okawachi, Kenta Chokawa, Masaaki Araidai, Akira Kusaba, Yoshihiro Kangawa, Koichi Kakimoto, Sheng Yo, Yoshio Honda, Shugo Nitta, Hiroshi Amano, Kenji Shiraishi

19th International Conference on Crystal Growth and Epitaxy (ICCGE-19)  2019.7 

Electronic Properties of GaN Nanopipe Threading Dislocation with M-Plane Surface International conference

Takashi Nakano, Kenta Chokawa, Masaaki Araidai, Kenji Shiraishi, Atsushi Oshiyama, Shigeyoshi Usami, Akira Kusaba, Yoshihiro Kangawa, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano

13th International Conference on Nitride Semiconductors (ICNS-13)  2019.7 

Electronic structure analysis of core structures of threading dislocations in GaN International conference

Takashi Nakano, Kenta Chokawa, Masaaki Araidai, Kenji Shiraishi, Atsushi Oshiyama, Akira Kusaba, Yoshihiro Kangawa, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano

Compound Semiconductor Week 2019 (CSW 2019)  2019.5 

GaN薄膜における貫通転位およびナノパイプm壁面の第一原理計算に基づく電子状態解析

中野崇志, 長川健太, 洗平昌晃, 白石賢二, 押山淳, 宇佐美茂佳, 草場彰, 寒川義裕, 田中敦之, 本田善央, 天野浩

第66回応用物理学会春季学術講演会  2019.3 

縦型結晶成長装置におけるGaN MOVPEシミュレーション

富澤巧, 川上賢人, 櫻井照夫, 草場彰, 岡本直也, 芳松克則, 醍醐佳明, 水島一郎, 依田孝, 寒川義裕, 柿本浩一, 白石賢二

第66回応用物理学会春季学術講演会  2019.3 

気相反応から考えるGaN MOVPEにおける炭素混入機構

大河内勇斗, 長川健太, 洗平昌晃, 草場彰, 寒川義裕, 柿本浩一, 白石賢二

第66回応用物理学会春季学術講演会  2019.3 

化学反応を含むGaN結晶成長流体シミュレーション手法の開発

榊原聡真, 川上賢人, 高村昴, 洗平昌晃, 草場彰, 岡本直也, 芳松克則, 寒川義裕, 柿本浩一, 白石賢二

第66回応用物理学会春季学術講演会  2019.3 

MOVPE法のGaN結晶成長3次元マルチフィジックスシミュレーション

川上賢人, 高村昴, 草場彰, 芳松克則, 岡本直也, 寒川義裕, 柿本浩一, 白石賢二

第66回応用物理学会春季学術講演会  2019.3 

GaNにおける貫通転位およびナノパイプm壁面の電子状態解析

中野崇志, 長川健太, 大河内勇斗, 洗平昌晃, 白石賢二, 押山淳, 草場彰, 寒川義裕, 田中敦之, 本田善央, 天野浩

第24回電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－  2019.1 

Monte Carlo study of influence of MOVPE growth condition on carbon concentration in GaN epi-layer International conference

Satoshi Yamamoto, Yuya Inatomi, Akira Kusaba, Pawel Kempisty, Kenji Shiraishi, Yoshihiro Kangawa

International Workshop on Nitride Semiconductors 2018 (IWN 2018)  2018.11 

Thermodynamic analysis of semipolar GaN and AlN under metalorganic vapor phase epitaxy growth condition International conference

Yuki Seta, Abdul Muizz Pradipto, Toru Akiyama, Kohji Nakamura, Tomonori Ito, Akira Kusaba, Yoshihiro Kangawa

International Workshop on Nitride Semiconductors 2018 (IWN 2018)  2018.11 

Non-equilibrium analysis of CH4 adsorption on GaN(0001) and (000-1): the growth orientation dependence of the C impurity concentration International conference

Akira Kusaba, Guanchen Li, Pawel Kempisty, Michael R. von Spakovsky, Yoshihiro Kangawa

International Workshop on Nitride Semiconductors 2018 (IWN 2018)  2018.11 

Multiphysics simulation of GaN MOVPE: Flow influence on GaN growth-orientation International conference

Subaru Komura, Kento Kawakami, Akira Kusaba, Katsunori Yoshimatsu, Naoya Okamoto, Yoshihiro Kangawa, Koichi Kakimoto, Kenji Shiraishi

International Workshop on Nitride Semiconductors 2018 (IWN 2018)  2018.11 

GaN結晶成長過程における炭素混入メカニズムの理論的解明

大河内勇斗, 長川健太, 洗平昌晃, 草場彰, 寒川義裕, 柿本浩一, 白石賢二

第47回結晶成長国内会議  2018.11 

表面再構成構造を考慮したGaN MOVPEのマルチフィジックス流動シミュレーション

川上賢人, 高村昴, 草場彰, 芳松克則, 岡本直也, 寒川義裕, 柿本浩一, 白石賢二

第47回結晶成長国内会議  2018.11 

Flow influence on GaN MOVPE growth-orientation International conference

Subaru Komura, Kento Kawakami, Yoshihiro Yamamoto, Akira Kusaba, Katsunori Yoshimatsu, Naoya Okamoto, Yoshihiro Kangawa, Koichi Kakimoto, Kenji Shiraishi

9th International Workshop on Modeling in Crystal Growth (IWMCG-9)  2018.10 

Methodology for Multiphysics Flow Simulation in GaN MOVPE using Thermodynamic Analysis and First Principles Calculations for GaN Deposition International conference

Kento Kawakami, Subaru Komura, Akira Kusaba, Katsunori Yoshimatu, Naoya Okamoto, Yoshihiro Kangawa, Koichi Kakimoto, Kenji Shiraishi

9th International Workshop on Modeling in Crystal Growth (IWMCG-9)  2018.10 

窒化ガリウム極性面におけるメタン吸着確率と炭素不純物取り込み Invited

草場彰, 李冠辰, パヴェウ・ケンピスティ, マイケル・フォン・スパコフスキー, 寒川義裕

日本学術振興会第162委員会第110回研究会・特別公開シンポジウム「紫外発光デバイスの最前線と将来展望」  2018.9 

有機金属気相エピタキシー成長における熱力学解析：半極性面の検討

瀬田雄基, アブドルムィッツプラディプト, 秋山亨, 中村浩次, 伊藤智徳, 草場彰, 寒川義裕

第79回応用物理学会秋季学術講演会  2018.9 

Monte Carlo simulation of carbon incorporation in GaN MOVPE International conference

Satoshi Yamamoto, Yuya Inatomi, Akira Kusaba, Pawel Kempisty, Yoshihiro Kangawa

2018.8 

Relationship between the CH4 Adsorption Probability and the C Impurity Concentration in the Polar-GaN MOVPE System International conference

Akira Kusaba, Guanchen Li, Michael R. von Spakovsky, Pawel Kempisty, Yoshihiro Kangawa

2018.8 

GaN-MOVPE成長におけるCH4吸着確率とC不純物濃度の面方位依存性

草場彰, 李冠辰, パヴェウ・ケンピスティ, マイケル・フォン・スパコフスキー, 寒川義裕

第10回ナノ構造・エピタキシャル成長講演会  2018.7 

Formation Mechanism of Singular Structure in AlInN Layer Grown on M-GaN Substrate by MOVPE Invited International conference

Yuya Inatomi, Akira Kusaba, Yoshihiro Kangawa, Kazunobu Kojima, Shigefusa Chichibu

6th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA '18)  2018.4 

MOVPE成長m面AlInN/GaNヘテロ構造における特異構造(2)

稲富悠也, 草場彰, 柿本浩一, 寒川義裕, 小島一信, 秩父重英

第65回応用物理学会春季学術講演会  2018.3 

Driving force for m-plane GaN MOVPE: a new thermodynamic modeling International conference

Akira Kusaba, Yoshihiro Kangawa, Kenji Shiraishi

10th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2018)  2018.3 

GaN MOVPE法における基板面方位依存性を考慮した流れの影響II

高村昴, 川上賢人, 山本芳裕, 草場彰, 芳松克則, 岡本直也, 寒川義裕, 柿本浩一, 白石賢二

第46回結晶成長国内会議  2017.11 

GaN(0001)におけるNH3吸着過程の非平衡量子熱力学モデリング：付着係数の理論解析

草場彰, 李冠辰, マイケル・ヴォン・スパコフスキー, 寒川義裕, 柿本浩一

第46回結晶成長国内会議  2017.11 

GaN MOVPE法における基板面方位依存性を考慮した流れの影響I

川上賢人, 高村昴, 山本芳裕, 草場彰, 芳松克則, 岡本直也, 寒川義裕, 柿本浩一, 白石賢二

第46回結晶成長国内会議  2017.11 

Adsorption of ammonia in III-nitrides vapor phase epitaxy: theoretical approach based on steepest-entropy-ascent quantum thermodynamics International conference

Akira Kusaba, Guanchen Li, Michael R. von Spakovsky, Yoshihiro Kangawa

International Workshop on UV Materials and Devices 2017 (IWUMD 2017)  2017.11 

Thermodynamic Modeling of GaN MOVPE: Contribution of Surface State International conference

Akira Kusaba, Yoshihiro Kangawa, Pawel Kempisty, Kenji Shiraishi, Koichi Kakimoto, Akinori Koukitu

International Conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017)  2017.9 

Steepest-entropy-ascent quantum thermodynamic behavior of ammonia chemical adsorption on GaN(0001) surfaces under MOVPE International conference

Akira Kusaba, Guanchen Li, Michael R. von Spakovsky, Yoshihiro Kangawa, Koichi Kakimoto

E-MRS 2017 Fall Meeting  2017.9 

NH3化学吸着の非平衡状態発展：最急エントロピー勾配量子熱力学モデリング

草場彰, Guanchen Li, Michael R. von Spakovsky, 寒川義裕, 柿本浩一

第9回ナノ構造・エピタキシャル成長講演会  2017.7 

Influence of Growth Orientation on Driving Force for InN Deposition by MOVPE International conference

Akira Kusaba, Yoshihiro Kangawa, Michael R. von Spakovsky, Kenji Shiraishi, Koichi Kakimoto, Akinori Koukitu

International Workshop on Ntride Semiconductors 2016 (IWN 2016)  2016.10 

Contribution of lattice constraint to indium incorporation into coherently grown InGaN International conference

Takuya Tamura, Akira Kusaba, Yoshihiro Kangawa, Tomonori Ito, Tadeusz Suski, Koichi Kakimoto, Akinori Koukitu

18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)  2016.8 

Thermodynamic analysis of InN metalorganic vapor phase epitaxy: influence of growth orientation and surface reconstruction International conference

Akira Kusaba, Yoshihiro Kangawa, Koichi Kakimoto, Kenji Shiraishi, Hiroshi Amano, Akinori Koukitu

18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)  2016.8 

InおよびN極性InN有機金属気相成長の熱力学解析

草場彰, 寒川義裕, 柿本浩一, 白石賢二, 纐纈明伯

第35回電子材料シンポジウム  2016.7 

InN(0001)面および(000-1)面MOVPE成長の熱力学解析

草場彰, 寒川義裕, 白石賢二, 柿本浩一, 纐纈明伯

第8回窒化物半導体結晶成長講演会  2016.5 

Ab initio-based approach to surface reconstruction on InN(0001) during induced-pressure MOVPE International conference

Akira Kusaba, Yoshihiro Kangawa, Yoshio Honda, Hiroshi Amano, Koichi Kakimoto

6th International Symposium on Growth of III-Nitrides (ISGN-6)  2015.11 

Relationship between stability of facet surfaces and incorporation of zinc-blende phase in InN during pressurized reactor MOVPE: A theoretical approach International conference

Akira Kusaba, Yoshihiro Kangawa, Stanislaw Krukowski, Koishi Kakimoto

5th European Conference on Crystal Growth (ECCG-5)  2015.9 

Surface Energy and Facet Formation in InN films grown by Pressurized-Reactor MOVPE

Akira Kusaba, Yoshihiro Kangawa, Stanislaw Krukowski, Takeshi Kimura, Tomoyuki Tanikawa, Ryuji Katayama, Takashi Matsuoka, Koichi Kakimoto

2015.7 

AlN固体ソース溶液成長における固‐液界面形状のその場観察

草場彰, 住吉央朗, 寒川義裕, 三宅秀人, 柿本浩一

第7回窒化物半導体結晶成長講演会  2015.5 

InN加圧MOVPE成長における成長形と異相混入：表面エネルギーの理論解析

草場彰, 寒川義裕, 柿本浩一

第7回窒化物半導体結晶成長講演会  2015.5 

Wettability-Driven Water Condensation at the Micron and Submicron Scale International conference

Yutaka Yamada, Akira Kusaba, Tatsuya Ikuta, Takashi Nishiyama, Koji Takahashi, Yasuyuki Takata

15th International Heat Transfer Conference (IHTC-15)  2014.8 

グラファイト面上におけるサブミクロンスケールの液滴核生成と成長

山田寛, 草場彰, 生田竜也, 西山貴史, 高橋厚史, 高田保之

第51回日本伝熱シンポジウム  2014.5 

Growth and Coalescence of Condensed Microdroplets on Graphite Surface International conference

Yutaka Yamada, Akira Kusaba, Tatsuya Ikuta, Takashi Nishiyama, Koji Takahashi, Yasuyuki Takata

5th International Conference on Heat Transfer and Fluid Flow in Microscale (HTFFM-V)  2014.4 

ESEMを用いたグラファイト面上の液滴凝縮過程に関する研究

山田寛, 草場彰, 生田竜也, 西山貴史, 高橋厚史, 高田保之

日本機械学会熱工学コンファレンス2013  2013.10 

Microscopic Mechanism of Water Condensation on HOPG International conference

Yutaka Yamada, Akira Kusaba, Tatsuya Ikuta, Takashi Nishiyama, Koji Takahashi, Yasuyuki Takata

International Symposium on Innovative Materials for Processes in Energy Systems 2013 (IMPRES 2013)  2013.9 

スパースモデリングを用いたスパッタAlN膜の高温アニールプロセスの条件探索

原太一, 草場彰, 寒川義裕, 三宅秀人

第14回半導体材料・デバイスフォーラム  2023.12 

窒化物半導体の化学気相成長における表面科学の進展（特集「結晶成長ダイナミクスの展望－平衡過程と非平衡過程の協奏－」） Reviewed

寒川義裕, 草場彰

表面と真空   2023.4

Estimating efficiency of AlGaN light-emitting diodes with numerical simulations (Special Issue: Recent Progress in Growth of Nitride Semiconductors for Realization of Deep Ultraviolet Optoelectronic Devices) Reviewed

Konrad Sakowski, Kazuki Yamada, Kosuke Sato, Pawel Kempisty, Motoaki Iwaya, Hideto Miyake, Pawel Strak, Akira Kusaba, Yoshihiro Kangawa, Stanislaw Krukowski

Journal of the Japanese Association for Crystal Growth   2020.10

III族窒化物半導体における表面・界面の構造および極性の理論解析（特集「特異構造の結晶科学～結晶成長と構造・物性相関～」） Reviewed

秋山亨, 中村浩次, 伊藤智徳, 草場彰, 寒川義裕

日本結晶成長学会誌   2018.4

窒化物半導体MOVPEの熱力学解析 ～面方位依存性～（特集「エピタキシーの基礎～ステップダイナミクスと熱力学的考察～」） Reviewed

寒川義裕, 草場彰, 白石賢二, 柿本浩一, 纐纈明伯

日本結晶成長学会誌   2017.8

表面再構成インフォマティクスによる大規模周期構造の探索

Grant number：20K15181  2020.4 - 2024.3

日本学術振興会  科学研究費助成事業  若手研究

草場 彰

結晶成長プロセス・インフォマティクスの創出による宇宙用パワー半導体の研究開発

Grant number：19J00871  2019.4 - 2022.3

日本学術振興会  科学研究費助成事業  特別研究員奨励費

草場 彰

窒化ガリウム結晶成長プロセスの理論データベース構築とデータ科学への応用

2018.4 - 2019.3

九州大学応用力学研究所  共同利用研究  若手キャリアアップ支援研究

草場 彰

耐放射線性を有す高効率太陽電池および低損失電力変換素子用材料の開発

Grant number：16J04128  2016.4 - 2019.3

日本学術振興会  科学研究費助成事業  特別研究員奨励費

草場 彰

2022.10

Staying countory name 1：Germany   Staying institution name 1：IWN 2022

2020.2

Staying countory name 1：Malta   Staying institution name 1：ICPRAM 2020

2018.8

Staying countory name 1：Poland   Staying institution name 1：ISGN-7

2018.3

Staying countory name 1：Poland   Staying institution name 1：ポーランド科学アカデミー　高圧物理学研究所

2017.9

Staying countory name 1：Poland   Staying institution name 1：E-MRS 2017 Fall Meeting

2016.10

Staying countory name 1：United States   Staying institution name 1：IWN 2016

Staying institution name 2：Virginia Tech

2015.9

Staying countory name 1：Italy   Staying institution name 1：ECCG-5