| 1. |
Ryu Hashimoto, Taishiro Koga, Takaya Nagano, Kenta Moto, Keisuke Yamamoto, Taizoh Sadoh, Effects of Capping Layers on Solid-Phase Crystallization of Sn-Doped Ge Thin Films on Insulators, 14th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2023.12. |
| 2. |
Ren Aoki, Keita Katayama, Daisuke Nakamura, Hisato Yabuta, Hiroshi Ikenoue, and Taizoh Sadoh, Ultra-High Concentration Doping by Excimer Laser Annealing Using Solid-Diffusion Source, 2023 International Conference on Solid State Materials and Devices, 2023.09. |
| 3. |
Taishiro Koga, Takaya Nagano, Kenta Moto, Keisuke Yamamoto, and Taizoh Sadoh, High Carrier Mobility of Sn-Doped Ge Thin-Films ( |
| 4. |
Yuki Hanafusa, Kota Okamoto, and Taizoh Sadoh, Grain Enlargement of Ultrathin Si Films on Insulators by Sn-Doping, 2023 International Conference on Solid State Materials and Devices, 2023.09. |
| 5. |
Ren Aoki, Keita Katayama, Daisuke Nakamura, Hisato Yabuta, Hiroshi Ikenoue, and Taizoh Sadoh, Formation of pn Junctions by Doping Using Excimer Laser Annealing, 12th Asia-Pacific Laser Symposium, 2023.09. |
| 6. |
Tatsuya Okada, Otokichi Shimoda, C. J. Koswaththage, Takashi Kajiwara, Taizoh Sadoh, and Takashi Noguchi, Crystallization by Rapid Thermal Annealing of Ne Sputtered InSb Films Deposited on Glass, 23rd International Meeting on Information Display, 2023.08. |
| 7. |
Yuki Hanafusa, Kota Okamoto, and Taizoh Sadoh, Growth Characteristics of Sn-Doped Si Thin-Filmson Insulator, 2023 Asia-Pacific Workshop on Advanced Semiconductor Devices, 2023.07. |
| 8. |
Taishiro Koga, Takaya Nagano, Kenta Moto, Keisuke Yamamoto, and Taizoh Sadoh, Improved Carrier Mobility of Sn-Doped Ge Thin-Films (≤20 nm) by Post-Annealing for Thin-Film Transistor Application, 30th International Workshop on Active-Matrix Flatpanel Displays and Devices, 2023.07. |
| 9. |
Ren Aoki, Keita Katayama, Daisuke Nakamura, Hiroshi Ikenoue, and Taizoh Sadoh, Excimer Laser Doping for PN Junction Formation with Extremely Low Thermal Budget, 30th International Workshop on Active-Matrix Flatpanel Displays and Devices, 2023.07. |
| 10. |
Yuki Hanafusa, Kota Okamoto, and Taizoh Sadoh, Sn-Doped Si Thin-Films on Insulator by Solid-Phase Crystallization, 30th International Workshop on Active-Matrix Flatpanel Displays and Devices, 2023.07. |
| 11. |
Taizoh Sadoh, Takaya Nagano, Taishiro Koga, Kenta Moto, and Keisuke Yamamoto, Interface-Modulated Solid-Phase Crystallization of Sn-Doped GeUltra-thin Films for Advanced TFT, The 29th International Display Workshops, 2022.12. |
| 12. |
Kota Okamoto, Tomohiro Kosugi, and Taizoh Sadoh, Ultrathin Large Grain Si Films on Insulator by Solid-Phase Crystallization Combined with Sn-Doping, 2022 International Conference on Solid State Materials and Devices, 2022.09. |
| 13. |
Takaya Nagano, Ryutaro Hara, Kenta Moto, Keisuke Yamamoto, and Taizoh Sadoh, Improved Carrier Mobility of Sn-Doped Ge Ultrathin ( |
| 14. |
Takashi Kajiwara, Otokichi Shimoda, Tatsuya Okada, Charith Jayanada Koswaththage, Takashi Noguchi, and Taizoh Sadoh, Formation of High-Mobility InSb Films on Glass by Sputtering and Rapid-Thermal Annealing, 2022 International Conference on Solid State Materials and Devices, 2022.09. |
| 15. |
Kota Okamoto, Tomohiro Kosugi, and Taizoh Sadoh, Solid-Phase Crystallization Characteristics of SiSn Thin Film on Insulating Substrates, 9th International Symposium on Control of Semiconductor Interfaces, 2022.09. |
| 16. |
Takaya Nagano, Ryutaro Hara, Kenta Moto, Keisuke Yamamoto, and Taizoh Sadoh, Improved Solid-Phase Crystallization of Sn-Doped Ge Thin Films (≤ 50 nm) on Insulator by a-Si Capping, 9th International Symposium on Control of Semiconductor Interfaces, 2022.09. |
| 17. |
Takaya Nagano, Ryutaro Hara, and Taizoh Sadoh, Solid-Phase Crystallization Characteristics of Interface-Modulated Sn-Doped Ge Thin Films on Insulator with Capping, 29th International Workshop on Active-Matrix Flatpanel Displays and Devices, 2022.07. |
| 18. |
Ryutaro Hara, Masanori Chiyozono, and Taizoh Sadoh, High Carrier Mobility of Sn-Doped Ge Ultrathin Films on Insulator by Capping-Enhanced Solid-Phase Crystallization, 2021 International Conference on Solid State Materials and Devices, 2021.09. |
| 19. |
Tomohiro Kosugi, Kota Okamoto, and Taizoh Sadoh, Effect of Sn doping to Solid-Phase Crystallization of Si thin film on Insulator, 2021 International Conference on Solid State Materials and Devices, 2021.09. |
| 20. |
Otokichi Shimoda, Yuki Sawama, C. J. Koswaththage, Takashi Noguchi, Takashi Kajiwara, Taizoh Sadoh, and Tatsuya Okada, Crystallization of SiN Capped InSb Films on Glass by Rapid Thermal Annealing, The 21st International Meeting on Information Display (IMID 2021), 2021.08. |
| 21. |
K. Okamoto, T. Kosugi, and T. Sadoh, Low-Temperature Solid-Phase Crystallization of High-Sn Concentration SiSn on Insulator, 28th International Workshop on Active-Matrix Flatpanel Displays and Devices, 2021.06. |
| 22. |
R. Hara, M. Chiyozono, and T. Sadoh, Improved Carrier Mobility of Poly-Ge Ultrathin Films on Insulator by Solid-Phase Crystallization, 28th International Workshop on Active-Matrix Flatpanel Displays and Devices, 2021.06. |
| 23. |
Taizoh Sadoh, (Plenary) Low-Temperature Crystallization of Group-IV Semiconductors on Insulator for Advanced Electronics, 4th International Conference on Circuits, Systems and Simulation (ICCSS 2021) & 4th International Conference on Consumer Electronics and Devices (ICCED 2021), 2021.05. |
| 24. |
M. Chiyozono, X. Gong, and T. Sadoh, Improved Carrier Mobility of Sn-Doped Ge Thin-Films (≤50 nm) by Interface-Modulated Solid-Phase Crystallization Combined with Thinning, 27th International Workshop on Active-Matrix Flatpanel Displays and Devices, 2020.09. |
| 25. |
T. Kosugi, K. Yagi, T. Sadoh, SiSn Film on Insulator by Low-Temperature Solid-Phase Crystallization, 27th International Workshop on Active-Matrix Flatpanel Displays and Devices, 2020.09. |
| 26. |
Tomohiro Kosugi, Kazuki Yagi, and Taizoh Sadoh, Low-Temperature Solid-Phase Crystallization of SiSn on Insulator - Effects of Sn Concentration and Film Thickness -, 2020 International Conference on Solid State Materials and Devices, 2020.09. |
| 27. |
Yuta Tan, Daiki Tsuruta, Taizoh Sadoh, Low-Temperature Solid-Phase Crystallization Combined with a-Si Under-Layer for High Sn Concentration GeSn Film without Sn-Segregation, 2020 International Conference on Solid State Materials and Devices, 2020.09. |
| 28. |
Masanori Chiyozono, Xiangsheng Gong, Taizoh Sadoh, High Carrier Mobility of Sn-Doped Ge Thin-Films (~20 nm) on Insulator by Interface-Modulated Solid-Phase Crystallization, 2020 International Conference on Solid State Materials and Devices, 2020.09. |
| 29. |
Tomohiro Kosugi, Kazuki Yagi, and Taizoh Sadoh, Growth Characteristics of SiSn on Insulator by Solid Phase Crystallization, JSAP Kyushu Chapter Annual Meeting 2020 /The 5th Asian Applied Physics Conference, 2020.11. |
| 30. |
Xiangsheng Gong, Sen Liu, Hongmiao Gao, Taizoh Sadoh, Low-Temperature Bi-Induced Layer Exchange Crystallization for Formation of n-Type Ge on Insulator, 2019 International Conference on Solid State Materials and Devices, 2019.09. |
| 31. |
Xiangsheng Gong, Chang Xu, Taizoh Sadoh, High Carrier Mobility Sn-Doped Ge Thin-Films (≤50 nm) on Insulator by Interface-Modulated Solid-Phase Crystallization at Low-Temperature, 2019 International Conference on Solid State Materials and Devices, 2019.09. |
| 32. |
Xiangsheng Gong, Chang Xu, and Taizoh Sadoh, Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation, 26th International Workshop on Active-Matrix Flatpanel Displays and Devices, 2019.07. |
| 33. |
K. Imokawa, N. Tanaka, A. Suwa, D. Nakamura, T. Sadoh, T. Goto, H. Ikenoue, Low-temperature and low-cost excimer laser doping for poly-si thin-film transistor fabrication, SPIE Photonics West, Lase, Laser-based Micro- and Nanoprocessing XIII, 2019.02. |
| 34. |
K. Yagi, M. Miyao and T. Sadoh, Low-Temperature Solid-Phase Crystallization of SiSn Films on Insulator, 14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14), 2018.10. |
| 35. |
H. Gao, M. Miyao, T. Sadoh, Low-Temperature Formation of n-Type Ge on Insulator by Thickness-Modulated Sb-Induced Layer Exchange Crystallization Combined with Thin Ge Under-Layer Insertion, 2018 International Conference on Solid-State Devices and Materials, 2018.09. |
| 36. |
T. Sadoh, T. Sugino, K. Moto, R. Matsumura, H. Ikenoue, M. Miyao, Enhanced Growth of High Sn Concentration (Sn>=10%) GeSn on Insulator by Low Temperature (~170°C) Solid-Phase Crystallization Combined with Weak Laser Irradiation, 2018 International Conference on Solid-State Devices and Materials, 2018.09. |
| 37. |
N. Tanaka, K. Imokawa, A. Suwa, D. Nakamura, T. Sadoh, H. Ikenoue, Excimer Laser Doping of LTPS Thin Films for Printable Device Fabrication, 2018 International Conference on Solid-State Devices and Materials, 2018.09. |
| 38. |
Chang Xu, Masanobu Miyao, Taizoh Sadoh, High Carrier Mobility Sn-Doped Ge on Insulator by Solid-Phase Crystallization Combined with Si-Under-Layer Insertion, E-MRS, 2018 Fall Meeting, 2018.09. |
| 39. |
Hongmiao Gao, Masanobu Miyao, Taizoh Sadoh, N-Type Ge on Insulator by Low-Temperature Sb-Induced Layer Exchange Crystallization Combined with Ge Under-Layer Insertion, E-MRS, 2018 Fall Meeting, 2018.09. |
| 40. |
Hongmiao Gao and Taizoh Sadoh, Low-Temperature Formation of n-Ge/Insulator by Sb-Induced Layer Exchange Crystallization Combined with Ge Under-Layer Insertion, 2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 2018.07. |
| 41. |
Chang Xu, Hongmiao Gao, Masanobu Miyao, and Taizoh Sadoh, Effects of a-Si Layer Insertion on Solid-Phase Crystallization of Sn Doped Ge on Insulator, 2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 2018.07. |
| 42. |
Kazuki Yagi and Taizoh Sadoh, Effect of film thickness on low temperature solid-phase crystallization of SiSn on insulator, 2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 2018.07. |
| 43. |
Kaname Imokawa, Nozomu Tanaka, Akira Suwa, Daisuke Nakamura, Taizoh Sadoh, Tetsuya Goto, and Hiroshi Ikenoue, Characterization of Characterization of Excimer-Laser Doping of a Poly-Si Thin Film with a Phosphoric-Acid Coating for Thin-Film-Transistor Fabrication, 25th International Workshop on Active-Matrix Flatpanel Displays and Devices, 2018.07. |
| 44. |
T. Sadoh, M. Miyao, and I. Tsunoda, Low-Temperature Crystallization of Group-IV Semiconductors on Insulator Using Catalysis, 11th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2018.02. |
| 45. |
Hongmiao Gao, Masanobu Miyao, and Taizoh Sadoh, Low-Temperature Formation of n-Type Ge on Insulator by Sb-Induced Layer Exchange Crystallization, 11th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2018.02. |
| 46. |
T. Sugino, K. Moto, R. Matsumura, H. Ikenoue, M. Miyao, and T. Sadoh, High Substitutional-Sn-Concentration GeSn-on-Insulator by Weak-Laser-Irradiation-Enhanced Solid-Phase Crystallization at Low-Temperature (~170°C), 2017 International Conference on Solid-State Devices and Materials, 2017.09. |
| 47. |
H. Gao, R. Aoki, M. Miyao, and T. Sadoh, Low-Temperature Sb-Induced Layer Exchange Crystallization for Slef-Limiting Formation of n-Type Ge/Insulator, 2017 International Conference on Solid-State Devices and Materials, 2017.09. |
| 48. |
H. Gao, R. Aoki, M. Sasaki, M. Miyao, and T. Sadoh, Low-Temperature Formation of n-Type Ge/Insulator by Sb-Induced Layer Exchange Crystallization, 24th International Workshop on Active-Matrix Flatpanel Displays and Devices, 2017.07. |
| 49. |
T. Sugino, K. Moto, H. Ikenoue, M. Miyao, and T. Sadoh, Thickness-Dependent Substitutional-Sn-Concentration in GeSn-on-Insulator by Weak- Laser-Irradiation-Enhanced Solid-Phase Crystallization at Low-Temperature (180°C), 24th International Workshop on Active-Matrix Flatpanel Displays and Devices, 2017.07. |
| 50. |
T. Sugino, K. Moto, H. Ikenoue, M. Miyao, and T. Sadoh, Weak-Laser-Irradiation-Enhanced Solid-Phase Crystallization of GeSn-on-Insulator at Low-Temperature (180°C) - Thickness-Dependent High Substitutional-Sn-Concentration -, 17th International Workshop on Junction Technology 2017, 2017.06. |
| 51. |
H. Gao, R. Aoki, M. Sasaki, M. Miyao, and T. Sadoh, Formation of n-Type Ge on Insulator by Low-Temperature Sb-Induced Layer Exchange Crystallization, 17th International Workshop on Junction Technology 2017, 2017.06. |
| 52. |
Nozomu Tanaka, Akira Suwa, Tetsuya Goto, Daisuke Nakamura, Taizoh Sadoh, Hiroshi Ikenoue, A Novel Method for Laser Doping of Poly-Si Thin Films Using XeF Excimer Laser Irradiation in Acid Solution, Lasers in Manufacturing Conference 2017, 2017.06. |
| 53. |
M. Sasaki, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Taizoh SADOH, Low-Temperature (~250°C) Growth of Large-Grain Sn-Doped Ge (100) on Insulator by Al-Induced Crystallization for Flexible Electronics, 10th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2017.02. |
| 54. |
Taizoh SADOH, Y. Kai, K. Moto, Ryo Matsumura, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, High Carrier Mobility (~320 cm2/Vs) of Sn-Doped Poly-Ge on Insulator by Low-Temperature Solid-Phase Crystallization, 2016 MRS Falll Meeting, 2016.11. |
| 55. |
K. Moto, Ryo Matsumura, Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Hiroshi Ikenoue, Pulsed Laser Annealing for Non-Thermal Equilibrium GeSn (Sn>10%) on Insulating Substrate, 2016 MRS Falll Meeting, 2016.11. |
| 56. |
T. Sakai, Taizoh SADOH, Ryo Matsumura, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Low-Temperature ( |
| 57. |
Taizoh SADOH, R. Aoki, T. Tanaka, J.-H. Park, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Low-Temperature Growth of Orientation-Controlled Large-Grain Ge-Rich SiGe on Insulator at Controlled-Position for Flexible Electronics , 230th ECS Meeting, 2016.10. |
| 58. |
T. Sakai, Ryo Matsumura, Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Low-Temperature Formation of Sn-Doped Ge on Insulating Substrates by Metal-Induced Crystallization, 230th ECS Meeting, 2016.10. |
| 59. |
K. Moto, Ryo Matsumura, Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Hiroshi Ikenoue, Cooling Rate Dependent High Substitutional Sn Concentration (>10%) in GeSn Crystals on Insulator by Pulsed Laser-Annealing, 230th ECS Meeting, 2016.10. |
| 60. |
K. Moto, Taizoh SADOH, Y. Kai, Ryo Matsumura, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Thickness-Controlled Low-Temperature (~380°C) Solid-Phase Crystallization of Sn-Doped Poly-Ge/Insulator for High Carrier Mobility (~320 cm2/Vs), International Conference on Solid State Devices and Materials 2016, 2016.09. |
| 61. |
T. Sakai, Taizoh SADOH, Ryo Matsumura, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Low-Temperature Gold-Induced Lateral Crystallization of Sn-Doped Ge on Insulator for Flexible Electronics, International Conference on Solid State Devices and Materials 2016, 2016.09. |
| 62. |
Ryo Matsumura, Kenta Moto, Y. Kai, Taizoh SADOH, Hiroshi Ikenoue, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Thermally-Stable High Sn Concentration (~9%) GeSn on Insulator by Ultra-Low Temperature (~180°C) Solid-Phase Crystallization Triggered by Laser-Anneal Seeding, International Conference on Solid State Devices and Materials 2016, 2016.09. |
| 63. |
Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, M. Kurosawa, Taizoh SADOH, Orientation Controlled Artificial Nano-CRystals for Hybrid-Formation of (111), (110), and (100) Germanium-on-Insulator Structures, International Conference on Nanostructured Materials, 2016.08. |
| 64. |
Taizoh SADOH, R. Aoki, T. Tanaka, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Low-Temperature (≤300°C) Nano-Seeding Growth of Position-Controlled Large-Grain Germanium on Insulator for Flexible Electronics, XIII International Conference on Nanostructured Materials, 2016.08. |
| 65. |
Kenta Moto, Ryo Matsumura, Taizoh SADOH, Hiroshi Ikenoue, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Formation and Analysis of GeSn on Insulator with Non-Thermal Equilibrium Sn Concentration Obtained by Pulsed Laser-Annealing, Asia-Pacific Conference on Semiconducting Silicides and Related Materials 2016, 2016.07. |
| 66. |
Taizoh SADOH, R. Aoki, T. Tanaka, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Low-Temperature Formation of Position-Controlled Large-Grain Ge on Insulator by Gold-Induced Crystallization Combined with Localized Nucleation, Asia-Pacific Conference on Semiconducting Silicides and Related Materials 2016, 2016.07. |
| 67. |
Kenta Moto, Ryo Matsumura, Taizoh SADOH, Hiroshi Ikenoue, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Pulsed Laser Annealing for Supersaturated Substitutional Sn Atoms in GeSn Thin-Films on Insulator, International Union of Materials Research Societies - International Conference on Electronic Materials, 2016.07. |
| 68. |
M. Sasaki, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Taizoh SADOH, Large-Grain Sn-Doped Ge (100) on Insulator by Aluminum-Induced Crystallization at Low-Temperature for Flexible Electronics , Active-Matrix Flatpanel Displays and Devices 2016, 2016.07. |
| 69. |
Kenta Moto, Ryo Matsumura, Taizoh SADOH, Hiroshi Ikenoue, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Non-Thermal Equilibrium Growth of Amorphous Ge1-xSnx (0 |
| 70. |
R. Aoki, T. Tanaka, J.-H. Park, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Taizoh SADOH, Position-Controlled Ge Crystals on Insulator at Low Temperature (≤300°C) by Spatially-Modulated Gold-Induced Crystallization, 8th International SiGe Technology and Device Meeting, 2016.06. |
| 71. |
Y. Kai, Ryo Matsumura, Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Formation of High-Mobility Ge(Sn) on Insulator by Low-Temperature (~400°C) Solid-Phase Crystallization, 8th International SiGe Technology and Device Meeting, 2016.06. |
| 72. |
T. Sakai, Ryo Matsumura, Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Low Temperature ( |
| 73. |
Ryo Matsumura, Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Liquid Phase Growth of Composition-Controlled Large-Grain SixGe1-x (0 |
| 74. |
T. Sakai, Ryo Matsumura, Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Low-temperature formation of Sn-doped Ge on insulator by Au-induced lateral crystallization for flexible electronics, 35th Electronic Materials Symposium, 2016.06. |
| 75. |
Kenta Moto, Ryo Matsumura, Taizoh SADOH, Hiroshi Ikenoue, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Formation of GeSn Crystals with High Sn Concentration on Insulating Substrate by Pulsed Laser-Annealing, 9th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2016.01. |
| 76. |
Takatsugu Sakai, Ryo Matsumura, Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Low Temperature (~150oC) Au-Induced Lateral Growth of a-GeSn on Insulator, 9th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2016.01. |
| 77. |
Ryo Matsumura, Kenta Moto, Yuki Kai, Taizoh SADOH, Hiroshi Ikenoue, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Analysis and control of Si segregation phenomena to achieve uniform-SiGe crystals on insulator by rapid-melting growth, 2015 International Electron Devices and Materials Symposium, 2015.11. |
| 78. |
Kenta Moto, Ryo Matsumura, Taizoh SADOH, Hiroshi Ikenoue, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Laser-Annealing-Induced Crystallization of Ge1-xSnx (0≦x≦0.2) on Insulating Substrate, 2015 International Electron Devices and Materials Symposium, 2015.11. |
| 79. |
Kenta Moto, Ryo Matsumura, Taizoh SADOH, Hiroshi Ikenoue, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Laser-Annealing-Induced Crystallization of Ge1-xSnx (0≦x≦0.2) on Insulating Substrate, 2015 International Electron Devices and Materials Symposium, 2015.11. |
| 80. |
Rikuta Aoki, J.-H. Park, Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Effects of Diffusion-Barrier-Patterning on Formation of Position-Controlled Ge-on- Insulator by Gold-Induced Crystallization at Low Temperatures (≤300°C), 2015 International Electron Devices and Materials Symposium, 2015.11. |
| 81. |
Taizoh SADOH, J.-H. Park, Rikuta Aoki, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Gold-induced low-temperature (≤300°C) growth of quasi-single crystal SiGe on insulator for advanced flexible electronics, 228th ECS Meeting, 2015.10. |
| 82. |
Kenta Moto, Ryo Matsumura, Hironori Chikita, Taizoh SADOH, Hiroshi Ikenoue, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Non-thermal equilibrium formation of Ge1-xSnx (0≦x≦0.2) crystals on insulator by pulsed laser annealing, 228th ECS Meeting, 2015.10. |
| 83. |
Ryo Matsumura, Kenta Moto, Yuki Kai, Taizoh SADOH, Hiroshi Ikenoue, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Ultra-low temperature (~180°C) solid-phase crystallization of GeSn on insulator triggered by laser-anneal seeding, 228th ECS Meeting, 2015.10. |
| 84. |
Ryo Matsumura, Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Thermally-Stable High Sn Concentration (~9%) GeSn on Insulator by Ultra-Low Temperature (~180°C) Solid-Phase Crystallization Triggered by Laser-Anneal Seeding, SSDM 2015, 2015.09. |
| 85. |
Ryo Matsumura, Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Low-Temperature (~150°C) Solid-Phase Epitaxy of a-GeSn/c-Ge for High Non-Equilibrium Substitutional Sn-Concentration GeSn, SSDM 2015, 2015.09. |
| 86. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Laser-Anneal Seeded Solid-Phase Crystallization for Ultra-Low Temperature Growth of Germanium-Tin, IMRC 2015, 2015.08. |
| 87. |
Ryo Matsumura, Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Segregation-Controlled Rapid-Melting Growth for Sige-on-Insulator with Uniform Lateral Composition, IMRC 2015, 2015.08. |
| 88. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Crystallization of GeSn on insulating substrates by lateral solid-phase crystallization technique, EMS 2015, 2015.07. |
| 89. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Quasi-Single Crystal SiGe on Insulator by Au-Induced Crystallization for Flexible Electronics, AM-FPD-15, 2015.07. |
| 90. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Thickness dependent solid phase crystallization of amorphous GeSn on insulating substrates, ICSI 9, 2015.05. |
| 91. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Low Temperature ( |
| 92. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Melting Sn Induced Low-Temperature Seeding for Position Controlled Giant GeSn Crystal Arrays, ICSI 9, 2015.05. |
| 93. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, High Sn-Concentration (~8%) GeSn by Low-Temperature (~150°C) Solid-Phase Epitaxy of a-GeSn/c-Ge, ICSI 9, 2015.05. |
| 94. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Low-Temperature (≤300°C) Formation of Orientation-Controlled Large-Grain (≥10 μm) Ge-Rich SiGe on Insulator by Gold-Induced Crystallization, ICSI 9, 2015.05. |
| 95. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Large Single-Crystal Ge-on-Insulator by Thermally-Assisted Si-Seeded-Pulse-Laser Annealing (≤400°C), ICSI 9, 2015.05. |
| 96. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Low temperature solid phase crystallization of GeSn on insulator for flexible electronics, INC11, 2015.05. |
| 97. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Sn-precipitation-suppressed solid-phase epitaxy of GeSn on Ge at low-temperatures (~150°C), INC11, 2015.05. |
| 98. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Orientation-controlled large-grain SiGe on insulator by gold-induced crystallization at low-temperature for flexible opto-electronics, INC11, 2015.05. |
| 99. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Ultra-Low-Temperature Crystallization of a-GeSn on Insulator for Flexible Electronics, 8th Int. Workshop on New Group IV Semiconductor Nanoelectronics, 2015.01. |
| 100. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Composition-controlled SiGe crystalson insulator by rapid-melting growth -Analysisand control of SiGe segregation-, 8th Int. Workshop on New Group IV Semiconductor Nanoelectronics, 2015.01. |
| 101. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Low-Temperature Crystallization of a-GeSn on Insulating Films for Next-Generation Flexible Electronics(1) Characteristics of Solid Phase Crystallization, IEDMS 2014, 2014.11. |
| 102. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Low Temperature Crystallization of a-GeSn on Insulating Films for Next Generation Flexible Electronics - (2) Positioning Control of Nucleation – , IEDMS 2014, 2014.11. |
| 103. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Large-Grain Ge-on-Insulator Structure by Rapid-Melting Growth of a-GeSn, IEDMS 2014, 2014.11. |
| 104. |
Taizoh SADOH, Yuki Kai, Hironori Chikita, Ryo Matsumura, M. Miyao, Segregation-Controlled Rapid-Melting Growth for Large-Grain and Uniform -Composition SiGe on Insulator, JSPS International Core-to-Core Program Workshop on Atomically Controlled Processing for Ultra-large Scale Integration, 2014.11. |
| 105. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Self-Organized Technologies of Group-IV Based Hetero-Semiconductors on Insulator for Multi-Functional Devices, ICTF-16, 2014.10. |
| 106. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Low-Temperature Gold-Induced Crystallization of Orientation Controlled Sige on Plastic for Flexible Electronics, ICTF-16, 2014.10. |
| 107. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Melting-Sn Induced Seeding-Processing for Low-Temperature Lateral-Crystallization of a-GeSn on Insulating Substrate, SSDM 2014, 2014.09. |
| 108. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Formation of Large-Grain Ge-Based Group-IV Crystals on Insulator by Seedless Rapid-Melting Growth in Solid-Liquid-Coexisting Temperature Region, SSDM 2014, 2014.09. |
| 109. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Orientation-Controlled Large-Grain SiGe on Flexible Substrate by Nucleation-Controlled Gold-Induced Crystallization, SSDM 2014, 2014.09. |
| 110. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Formation of Large Grain Ge on Insulator Structure by Liquid-Solid Coexisting Annealing of a-GeSn, IUMRS-ICA, 2014.08. |
| 111. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Composite-Structures of Single-Crystalline Ge(SiSn) and Amorphous Insulator on Si Platform for Multi-Functional Transistors by Self-Organized Processing, ICCE-22, 2014.07. |
| 112. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Low-Temperature Formation of Atomically-Controlled GeSn Thin-Films on SiGe Virtual -Substrate by Liquid-Solid Coexisting Annealing, ICCE-22, 2014.07. |
| 113. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Self-Organized Crystallization of Group IV Mixed-Crystal Semiconductors on Insulating Substrate for Advanced Thin-Film-Transistors, ICCE-22, 2014.07. |
| 114. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Formation of Quasi-Single-Crystal Ge on Plastic by Nucleation-Controlled Au-Induced Layer-Exchange Growth for Flexible Electronics, AM-FPD 14, 2014.07. |
| 115. |
Taizoh SADOH, J.-H. PARK, Masashi Kurosawa, M. Miyao, Ultralow-Temperature Catalyst-Induced-Crystallization of SiGe on Plastic for Flexible Electronics, 7th International Silicon-Germanium Technology and Device Meeting, 2014.06. |
| 116. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Effect of Sn-doped Ge Insertion Layers on Epitaxial Growth of Ferromagnetic Fe3Si Films on a Flexible Substrate, 7th International Silicon-Germanium Technology and Device Meeting, 2014.06. |
| 117. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Sn-enhanced low-temperature crystallization of a-GeSn/c-Si Stacked Structure for high-quality SiGe on Si platform, 7th International Silicon-Germanium Technology and Device Meeting, 2014.06. |
| 118. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Self-organized-seeding process for melt-back lateral-growth of group-IV mixed-crystal on insulator, 7th International Silicon-Germanium Technology and Device Meeting, 2014.06. |
| 119. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Formation of Large Grain Ge single crystal on Insulating substrate by Liquid-Solid Coexisting Annealing of a-Ge(Sn), 225th ECS Meeting, 2014.05. |
| 120. |
Taizoh SADOH, J.-H. PARK, M. Miyao, Orientation-Controlled Large-Grain SiGe Crystal on Flexible Substrate by Low -Temperature Metal-Induced Crystallization, 7th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2014.01. |
| 121. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Influences of Sn on low-temperature crystallization of a-GeSn mixed or a-Ge/Sn stacked layer on crystal substrate, 7th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2014.01. |
| 122. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Dynamic control of lateral crystallization for Group IV mixed-crystal semiconductor on insulating substrate, 7th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2014.01. |
| 123. |
Taizoh SADOH, Narrowing-Induced Orientation-Stabilization in Rapid-Melting Growth of Ge-on- Insulator, IUMRS-ICA 2013, 2013.12. |
| 124. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Formation of giant SiGe crystals on insulator by self-organized-seeding rapid-melting growth, ISQNM 2013, 2013.12. |
| 125. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Low Temperature (~300oC) Epitaxial Growth of SiGe by Liquid-Solid Coexisting Annealing of a-GeSn/Si(100) Structure, ISQNM 2013, 2013.12. |
| 126. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Formation of Orientation-Controlled Thin (~50 nm) Ge(111)-on-Insulator by Rapid- Melting Growth Combined with Narrow-Striping, MNC 2013, 2013.11. |
| 127. |
Taizoh SADOH, J.-H. PARK, Masashi Kurosawa, M. Miyao, Low-Temperature Metal-Induced Crystallization of Orientation-Controlled SiGe on Insulator for Flexible Electronics, The Electrochemical Society, 224th ECS Meeting, 2013.10. |
| 128. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, High-Quality Hybrid-GeSn/Ge Stacked-Structures by Low-Temperature -Induced-Melting Growth, 224th ECS Meeting, 2013.10. |
| 129. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Liquid-Solid Coexisting Annealing of a-GeSn/Si(100) Structure for Low Temperature Epitaxial Growth of SiGe, 224th ECS Meeting, 2013.10. |
| 130. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Hybrid-Formation of Single-Crystalline Ge(Si,Sn)-on-Insulator Structures by Self-Organized Melting-Growth, SSDM 2013, 2013.09. |
| 131. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Segregation-Free Giant Single-Crystalline SiGe-on-Insulator by Super-Cooling-Controlled Rapid-Melting Growth, SSDM 2013, 2013.09. |
| 132. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Low-Temperature (~300oC) Epitaxial-Growth of SiGe(Sn) on Si-Platform by Liquid-Solid Coexisting Annealing, SSDM 2013, 2013.09. |
| 133. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Cooling-Rate-Controlled Rapid-Melting-Growth for Giant-Single-Crystal SiGe on Insulator, The 17th International Conference on Crystal Growth and Epitaxy, 2013.08. |
| 134. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Selective-Growth of (100)- and (111)- Ge Thin-Films on Insulator by Interfacial–Energy -Controlled Metal-Induced-Crystallization, The 17th International Conference on Crystal Growth and Epitaxy, 2013.08. |
| 135. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, High-Quality Ge-Networks on Insulator by Liquid-Phase Lateral-Epitaxy, The 55th Electronic Materials Conference, 2013.06. |
| 136. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Ultra-Low-Temperature Formation of (100)- or (111)-Oriented Ge on Insulator for Flexible Electronics, The 55th Electronic Materials Conference, 2013.06. |
| 137. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Laterally Graded SiGe-Profiles on Insulator by Segregation-Controlled Rapid-Melting Technique, The 55th Electronic Materials Conference, 2013.06. |
| 138. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Orientation-Stabilization of Ge(111) on Insulator by Nano-Patterning in Rapid-Melting Growth, 13th International Workshop on Junction Technology 2013, 2013.06. |
| 139. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, 3-Dimensionally-Graded SiGe-on-Insulator Stacked Structures by Successive Rapid -Melting Growth, ICSI-8, 2013.06. |
| 140. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Coherent Lateral-Growth of Ge over Insulating Film by Rapid-Melting-Crystallization, ICSI-8, 2013.06. |
| 141. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Single-Crystalline SiGe Stripes on Insulating Substrate by Segregation-Free Rapid -Melting-Growth, ICSI-8, 2013.06. |
| 142. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Dynamics Analysis of Rapid-Melting Growth Using SiGe on Insulator, ICSI-8, 2013.06. |
| 143. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Laterally-Graded P-Doping in GOI Structure by Ion-Implantation and Rapid- Melting- Growth, ICSI-8, 2013.06. |
| 144. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Melting-Induced-Mixing in a-Ge/Sn/c-Ge Structures for Sn-Doped Ge Films, ICSI-8, 2013.06. |
| 145. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Low-Temperature Formation of SiGe Crystals by Partial-Melting Method in a-GeSn /Si(100) Structure, ICSI-8, 2013.06. |
| 146. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Ge-Diffusion-Controlled Gold-Induced Crystallization of (100)- or (111)-Oriented Ge for Flexible Electronics, ICSI-8, 2013.06. |
| 147. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Low-Temperature Formation (~150oC) of Ge on Insulator through Layer-Exchange of Ge/Sn Stacked-Structures, ICSI-8, 2013.06. |
| 148. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, In-Depth Analysis of High-Quality Ge-on-Insulator Structure Formed by Rapid-Melting Growth, ICSI-8, 2013.06. |
| 149. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Orientation-Stabilization of Ge(111) on Insulator by Nano-Patterning in Rapid-Melting Growth, ICSI-8, 2013.06. |
| 150. |
Taizoh SADOH, M. Miyao, Recent Progress of Rapid-Melting-Growth for Laterally-Graded, Ge-Based Mixed-Crystals on Insurato, 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, 2013.02. |
| 151. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Orientation-Stabilized Lateral-Growth of Ge-on-Insulator Nano-Wires by Rapid-Melting-Process, MNC 2012, 2012.10. |
| 152. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Hybrid-Formation of Ge-on-Insulator Structures on Si Platform by SiGe-Mixing-Triggered Rapid-Melting Growth --- A Road to Artificial Crystal ---, PRiME 2012, ECS Pacific RIM Meeting 2012, 2012.10. |
| 153. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Formation of large-grain Ge(111) films on insulator by gold-induced layer-exchange crystallization at low temperature, PRiME 2012, ECS Pacific RIM Meeting 2012, 2012.10. |
| 154. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Formation of Graded SiGe on Insulator by Segregation-Controlled Rapid-Melting-Growth, PRiME 2012, ECS Pacific RIM Meeting 2012, 2012.10. |
| 155. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Formation of Large Grain SiGe on Insulator by Si Segregation in Seedless-Rapid-Melting Process, PRiME 2012, ECS Pacific RIM Meeting 2012, 2012.10. |
| 156. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Laterally Graded SiGe-on-Insulator with Universal Si Profile by Cooling-Rate-Controlled Rapid-Melting-Growth, SSDM 2012, 2012.09. |
| 157. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Low-temperature Crystallization of a-Si, a-Ge and a-Si1-xGex Films by Soft X-ray Irradiation, SSDM 2012, 2012.09. |
| 158. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Si Segregation Behavior in Giant SiGe Stripes on Insulator during Rapid-Melting-Growth, IUMRS-ICEM 2012, 2012.09. |
| 159. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Formation of N-Type Ge-on-Insulator through P-Implantation and Rapid-Melting Growth, IUMRS-ICEM 2012, 2012.09. |
| 160. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Formation of Germanium Epitaxial Layer on Insulator Using Nanostructured Rapid-Melting-Grown Template, IUMRS-ICEM 2012, 2012.09. |
| 161. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Defect Free Multi-Structures of [SiGe/Insulator]2 on Si (100) platform, E-MRS 2012 Fall Meeting, 2012.09. |
| 162. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Stripe-Length Dependent Laterally Graded SiGe Profiles by Rapid-Melting-Growth, E-MRS 2012 Fall Meeting, 2012.09. |
| 163. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, (111)-Oriented Large-Grain Ge on Insulator by Gold-Induced Crystallization Combined with Interfacial Layer Insertion, AM-FPD 2012, 2012.07. |
| 164. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Formation of Nanostructured Germanium-on-Insulator for Integration of Multi-Functional Materials on a Panel, AM-FPD 2012, 2012.07. |
| 165. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Multi-Layered SiGe-on-Insulator Structures by Rapid-Melting-Growth, AWAD 2012, 2012.06. |
| 166. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Formation of (111)-oriented large-grain Ge on insulator at low-temperature by gold-induced crystallization technique, AWAD 2012, 2012.06. |
| 167. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Orientation-controlled SiGe on insulator for system on panel, 8th International Thin-film Transistor Conference, 2012.01. |
| 168. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Catalytic-growth of Si-based thin-films for advanced semiconductor devices, International Thin Films Conference 2011, 2011.11. |
| 169. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Formation of High-Quality Ge-on-Insulator (GOI) Networks for Next-Generation Large-Scale-Integration (LSI), International Thin Films Conference 2011, 2011.11. |
| 170. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Kohei Hamaya, Advanced Hetero-epitaxial Growth based on SiGe for Multi-functional Devices, 15th International Conference on Thin Films 2011, 2011.11. |
| 171. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Orientation-Controlled Large-Grain Ge on Insulator by Au-Induced Layer-Exchange crystallization with Al2O3 Interfacial Layers, 15th International Conference on Thin Films 2011, 2011.11. |
| 172. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Agglomeration Free GOI Stripe Arrays with Nano-Spacing for Epitaxial Template, 15th International Conference on Thin Films 2011, 2011.11. |
| 173. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Hybrid-Formation of (100), (110), and (111) Ge-on-Insulator Structures on (100) Si Platform, SSDM 2011, 2011.09. |
| 174. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Kohei Hamaya, Novel Growth-techniques of SiGe-based Hetero-structures for Post-scaling Devices, ICSI7, 2011.08. |
| 175. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Enhancement of SiN-Induced Compressive and Tensile Strains in Si-Pillars by Modulation of SiN Network Structures, ICSI7, 2011.08. |
| 176. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Single-crystalline (110)-oriented Ge strips on insulating substrates by SiGe-mixing triggered rapid-melting-growth from artificial Si-micro-seeds, ICSI7, 2011.08. |
| 177. |
Taizoh SADOH, Effects of Dose on Activation Characteristics of P in Ge, ICSI7, 2011.08. |
| 178. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Orientation Control of (100), (110), (111) Mesh-Patterned GOI Grown by SiGe Mixing-Triggered Rapid Melting Technique, ICSI7, 2011.08. |
| 179. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Low Temperature (~250 oC) Layer Exchange Crystallization of Si1-xGex (x=1-0) on Insulator for Advanced Flexible Devices, ICSI7, 2011.08. |
| 180. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Recent Progress of SiGe-based Hetero-structure Technologies for Post-scaling Devices, 2011 International Workshop on Advanced Electrical Engineering and Related Topics, 2011.07. |
| 181. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Low-Temperature Formation of (111)Si1-xGex (0 |
| 182. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Low-temperature (~250oC) Crystallization of Poly-SiGe Films by Gold-Induced Layer-Exchange Technique for Flexible Electronics, AWAD2011, 2011.06. |
| 183. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Lateral-liquid phase epitaxy of (101) Ge-on-insulator from Si template by metal-induced crystallization, 219th ECS Meeting, 2011.05. |
| 184. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Growth-Direction Dependent Rapid-Melting-Growth of Ge-on-Insulator (GOI) and its Application to Ge Mesh-Growth, 219th ECS Meeting, 2011.05. |
| 185. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Au-catalyst Induced Low Temperature (~250 ℃) Layer Exchange Crystallization for SiGe on Insulator, 219th ECS Meeting, 2011.05. |
| 186. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Si1-xGex (0 x 1) oriented-growth on transparent-insulating-substrates by Al-induced layer-exchange crystallization, ITC 2011, 2011.03. |
| 187. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, High-Mobility Ge on Insulator (GOI) Nano-Stripes for Next Generation LSI, ESciNano2010, 2010.12. |
| 188. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Low-temperature (≤250oC) crystallization of Si on insulating substrate by gold-induced layer-exchange technique, TENCON2010, 2010.11. |
| 189. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, High-mobility Defect-free Ge Single-crystals by Rapid Melting Growth on Insulating Substrates, ICSICT 2010, 2010.11. |
| 190. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, High-Mobility Ge on Insulator (GOI) by SiGe Mixing-Triggered Rapid-Melting-Growth, 4th International SiGe Symposium The ECS 218th, 2010.10. |
| 191. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Single-Crystalline (100) Ge Stripes with High Mobilities Formed on Insulating Substrates by Rapid-Melting-Growth with Artificial Single-Crystal Si Seeds, SSDM2010, 2010.09. |
| 192. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Uniaxial and Biaxial Strain Distribution Mapping in SOI Micro-Structures by Polarized Raman Spectroscopy, SSDM2010, 2010.09. |
| 193. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Orientation control of Ge on insulator by growth-direction-selected SiGe-mixing-triggered melting growth, ISTESNE 2010, 2010.06. |
| 194. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Al-Induced Oriented-Crystallization of Si Films on Quartz and Its Application to Epitaxial-Template for Ge Growth, 5th ISTDM2010, 2010.05. |
| 195. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, SiGe Mixing-Triggered Melting-Growth for Orientation-Controlled Ge on Transparent Insulating Substrates, 5th ISTDM2010, 2010.05. |
| 196. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Strained Single-Crystal GOI (Ge on Insulator) Arrays by Rapid-Melting Growth from Si (111) Micro-Seeds, 5th ISTDM2010, 2010.05. |
| 197. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Growth-Direction-Dependent Characteristics of Ge-on-Insulator by SiGe Mixing Triggered Melting Growth, 5th ISTDM2010, 2010.05. |
| 198. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, SiGe Mixing-Triggered Liquid-Phase Epitaxy for Defect-Free GOI (Ge on Insulator), 5th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2010.01. |
| 199. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Interfacial Oxide Layer Controlled Al-Induced Crystallization of Si on Insulator for Epitaxial Template, 5th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2010.01. |
| 200. |
Taizoh SADOH, Ｍａｓａｎｏｂｕ Ｍｉｙａｏ, Orientation-controlled poly-SiGe on insulator by Aluminum-induced crystallization, ITC’10, 2010.01. |
