Kyushu University Academic Staff Educational and Research Activities Database
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Hiroshi Nakashima Last modified date:2020.06.16

Professor / Advanced Functional Devies
Global Innovation Center
Global Innovation Center

Graduate School
Administration Post
Director of the Global Innovation Center

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 Reseacher Profiling Tool Kyushu University Pure
Academic Degree
PHD Engineering
Country of degree conferring institution (Overseas)
Field of Specialization
Electronic Materials Engineering, Semiconductor Materials Engineering
Total Priod of education and research career in the foreign country
Research Interests
  • Research and development for 3C-SiC device
    keyword : High temperature operation, 3C-SiC, wide gap semiconductor
  • Research and development for Ge-light emitting device and Ge-Photo detector
    keyword : optical communication, light connection, light emission, phot0 detection, asymmetric metal/Ge/metal structure
  • Strained Ge Technology
    keyword : strained-Ge, strained-SiGe, MOSFET, Back-Gate MOSFET、mobility Enhancement, Interface State Density, Ge condensation by Dry Oxidation, Local Ge condensation by Dry Oxidation
  • Research and development for Ge-CMOS devices
    keyword : Ge channel, Ge On Insulator, high-k/Ge, Metal Gate, Metal S-D
  • Strained Si Technology
    keyword : strained-Si, SiGe, SOI, MOS, minority carrier generation lifetime, DLTS, Interface State, Photoluminescence
  • Evaluation technique for crystal semiconductor thin film on insulator
    keyword : SOI, SGOI, DLTS, photoluminescence
  • Control of heavy metal impurities in Si wafer
    keyword : solar cell, Si wafer, heavy metal impurity, gettering, DLTS
Academic Activities
1. W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima, Interface trap and border trap characterization for Al2O3/GeOx/Ge gate stacks and influence of these traps on mobility of Ge p-MOSFET, AIP Advances, 10, 065119-1-065119-7, 2020.06.
2. R. Oka, K. Yamamoto, H. Akamine, D. Wang, H. Nakashima, S. Hishiki, K. Kawamura , High interfacial quality metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC with Al2O3 interlayer and its internal charge analysis
, Jpn. J. Appl. Phys., 59, 06, SGGD17-1-SGGD17-10, 2020.04.
3. K. Yamamoto, K. Nakae, H. Akamine, D. Wang, H. Nakashima, Md. M Alam, K. Sawano, Z. Xue, M. Zhang, Z. Di , Conduction Type Control of Ge-on-Insulator: Combination of Smart-CutTM and Defect Elimination
, The Electrochemical Society Transactions, 93, 1, 73-77, 2019.10.
4. H. Nakashima, W.-C. Wen, K. Yamamoto, D. Wang, (Keynote) Border-Trap Characterization for Ge Gate Stacks Using Deep-Level Transient Spectroscopy
, The Electrochemical Society Transactions, 92, 4, 3-10, 2019.10.
5. K. Moto, K. Yamamoto, T. Imajo, T. Suemasu, H. Nakashima, K. Toko, Polycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallzed Ge on glass, Appl. Phys. Lett., 114, 21, 212107-1-212107-4, 2019.05.
6. K. Yamamoto, K. Nakae, D. Wang, H. Nakashima, Z. Xue, M. Zhang, Z. Di, Ge field-effect transistor with asymmetric metal source/drain fabricated on Ge-on-Insulator: Schottky tunneling source mode operation and conventional mode operation, Jpn. J. Appl. Phys., 58, 06, SBBA14-1-SBBA14-7, 2019.04.
7. T. Maekura, T. Goto, K. Nakae, K. Yamamoto, H. Nakashima,D. Wang, Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-insulator substrate, Jpn. J. Appl. Phys., 58, 06, SBBE05-1-SBBE05-6, 2019.04.
8. W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima, Border trap evaluation for SiO2/GeO2/Ge gate stacks using deep-level transient spectroscopy, J. Appl. Phys., 124, 20, 205303-1-205303-11, 2019.01.
9. @K. Yamamoto, @R. Noguchi, @M. Mitsuhara, @M. Nishida, @T. Hara, @D. Wang, and @H. Nakashima, Wide range control of Schottky barrier heights at metal/Ge interfaces with nitrogen-contained amorphous interlayers formed during ZrN sputter deposition, Semiconductor Science and Technology, 33, 114011-1-114011-7, 2018.10.
10. H. Higashi, K. Kudo, K. Yamamoto, S. Yamada, T. Kanashima, I. Tsunoda, H. Nakashima, and K. Hamaya, Electrical properties of pseudo-single-crystalline Ge films grown by Au-induced layer exchange crystallization at 250 °C, J. Appl. Phys., 123, 2, 215704-1-7, 2018.06.
11. H. Higashi, M. Nakano, K. Kudo,Y. Fujita, S. Yamada, T. Kanashima, I. Tsunoda, H. Nakashima,K. Hamaya, A crystalline germanium flexible thin-film transistor, Appl. Phys. Lett., 111, 22, 222105-1-222105-5, 2018.04.
12. Hiroshi Nakashima, H. Okamoto, Keisuke Yamamoto, DONG WANG, Achievement of Ultralow Contact Resistivity of Metal/n+-Ge Contacts with Zr-N-Ge Amorphous Interlayer (Invited), The Electrochemical Society Transactions, 80, 4, 97-106, 2017.10.
13. T. Maekura, K. Tanaka, C. Motoyama, R. Yoneda, Keisuke Yamamoto, Hiroshi Nakashima, DONG WANG, Effect of n-type doping level on direct band gap electroluminescence intensity for asymmetric metal/Ge/metal diodes, Semicond. Sci. Technol,, 32, 10, 104001-6, 2017.08.
14. Yuta Nagatomi, Tomoki Tateyama, Sintaro Tanaka, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima, Achievement of low parasitic resistance in Ge n-channel metal-oxide-semiconductor field-effect transistor using embedded TiN-source/drain structure, Semicond. Sci. Technol.,, 32, 3, 035001-8, 2017.01.
15. Yuta Nagatomi, Tomoki Tateyama, Sintaro Tanaka, Wei-Chen Wen, Taisei Sakaguchi, Keisuke Yamamoto, ZHAO LIWEI, DONG WANG, Hiroshi Nakashima, Mechanism of mobility enhancement in Ge p-channel metal-oxide-semiconductor field-effect transistor due to introduction of Al atoms into SiO2/GeO2 gate stack, Materials Science in Semiconductor Processing, 10.1016/j.mssp.2016.11.014, 70, 246-253, 2017.08.
16. Keisuke Yamamoto, Hayato Okamoto, DONG WANG, Hiroshi Nakashima, Fabrication of asymmetric Ge Schottky tunneling source n-channel field-effect transistor and its characterization of tunneling conduction, Materials Science in Semiconductor Processing, 10.1016/j.mssp.2016.09.024, 70, 283-287, 2017.08.
17. Takayuki Maekura, Yamamoto Keisuke, Hiroshi Nakashima, DONG WANG, Effects of metal/Ge contact and surface passivation on direct band gap light emission and detection for asymmetric metal/Ge/metal diodes, Jpn. J. Appl. Phys., 10.7567/JJAP.55.04EH08, Vol. 55, No. 4S, pp. 04EH08-1-6, 2016.04.
18. DONG WANG, Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima, Direct band gap light emission and detection at room temperature in bulk germanium diodes with HfGe/Ge/TiN structure, Thin Solid Films, 10.1016/j.tsf.2015.09.074, 602, 43-47, Vol. 602, pp. 43-47 , 2016.04.
19. Hiroshi Nakashima, Yamamoto Keisuke, DONG WANG, Electrical Properties of Group 4 Metal-Nitride/Ge Contacts and the Application to Ge Optoelectronic Devices , The Electrochemical Society Transactions, 10.1149/06910.0055ecst, Vol. 69, No. 10, pp. 55-66, 2015.10.
20. Kenji Kasahara, Yuta Nagatomi, Yamamoto Keisuke, Hidemi Higashi, Mario Nakano, Sinya Yamada, DONG WANG, Hiroshi Nakashima, Kouhei Hamaya, Electrical properties of pseudo-single-crystalline germanium thin-film-transistor fabricated on glass substrates, Appl. Phys. Lett., 10.1063/1.4932376, Vol. 107, No. 14, pp. 142102-1-5, 2015.10.
21. Yamamoto Keisuke, Ryutaro Noguchi, Mitsuhara Masatoshi, Minoru Nishida, Toru Hara, DONG WANG, Hiroshi Nakashima, Electrical and structural properties of group-4 transition-metal nitride (TiN, ZrN, and HfN) contacts on Ge, J. Appl. Phys., 10.10631/1.4930573, Vol. 118, No. 11, pp. 115701-1-12, 2015.09.
22. Yuta Nagatomi, Shintaro Tanaka, Yuichi Nagaoka, Yamamoto Keisuke, DONG WANG, Hiroshi Nakashima, Fabrication of PtGe/Ge contacts with high on/off ratio and its application to metal source/drain Ge p-channel MOSFETs , Jpn. J. Appl. Phys., 10.7567/JJAP.54.070306, Vol. 54, No. 7, pp. 070306-1-4 , 2015.06.
23. DONG WANG, Takahiro Maekura, Sho Kamezawa, Yamamoto Keisuke, Hiroshi Nakashima, Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric fin type metal/germanium/metal structure, Appl. Phys. Lett., 10.1063/1.4913261, Vol. 106, No.07, pp. 071102-1-4, 2015.02.
24. Yuta Nagatomi, Yuichi Nagaoka, Yamamoto Keisuke, DONG WANG, Hiroshi Nakashima, Investigation of Al-PMA Effect on Al2O3/GeOx/Ge Gate Stack, The Electrochemical Society Transactions, 10.1149/06406.0261ecst, Vol. 64, No.6, pp. 261-266, 2014.10.
25. DONG WANG, Yuta Nagatomi, Suta Kojima, Yamamoto Keisuke, Hiroshi Nakashima, Low-temperature fabrication of Y2O3//Ge gate stacks with ultrathin GeOx interlayer and low interface states density characterized by a reliable deep-level transient spectroscopy method, Thin Solid Films, 10.1016/j.tsf.2013.10.065, 288-291, Vol. 557, pp. 288-291, 2014.04.
26. Yamamoto Keisuke, Mitsuhara Masatoshi, Keisuke Hiidome, Ryutaro Noguchi, Minoru Nishida, DONG WANG, Hiroshi Nakashima, Role of an interlayer at a TiN/Ge contact to alleviate the intrinsic Fermi-level pinning position towrd the conduction band edge, Appl.Phys.Lett., 10.1063/1.4870510, Vol. 104, No. 13, pp. 132109-1-3, 2014.04.
27. Hiroshi Nakashima, Yamamoto Keisuke, DONG WANG, Development of Metal Source/Drain Ge-CMOS Using TiN/Ge and HfGe/Ge Contacts, The Electrochemical Society Transactions, 10.1149/05809.0167, Vol. 58, No.9, pp. 167-178, 2013.10.
28. Yamamoto Keisuke, Takahiro Sada, DONG WANG, Hiroshi Nakashima, Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO2/GeO2gate stack, Appl. Phys. Lett., 10.1063/1.4821546, Vol. 103, No.12, pp. 122106-1-3, 2013.09.
29. H. Nakashima, K. Yamamoto, H. Yang, and D. Wang, Gate Stack and Source/Drain Junction Formations for High-Mobility Ge MOSFETs, The Electrochemical Society Transactions, Vol. 50, No.9, pp.205-216, 2012.10.
30. D. Wang, S. Kojima, K. Sakamoto, K. Yamamoto and H. Nakashima, An accurate characterization of interface-state by deep-level transient spectroscopy for Ge metal-insulator-semiconductor capacitors with SiO2/GeO2 bilayer passivation
, J. Appl. Phys., 10.1063/1.4759139, Vol. 112, No. 8, pp. 083707-1-5, 2012.10.
31. K. Yamamoto, K. Harada, H. Yang, D. Wang, H. Nakashima, Fabrication of TiN/Ge Contact with Extremely Low Electron Barrier Height , Jpn. J. Appl. Phys., 10.1143/JJAP.51.070208, Vol. 51, No. 7, pp. 070208-1-3 , 2012.07.
32. K. Yamamoto, T. Yamanaka, K. Harada, T. Sada, K. Sakamoto, S. Kojima, H. Yang, D. Wang, H. Nakashima, Schottky Source/Drain Ge Metal-Oxide-Semiconductor Field-Effect Transistors with Directly Contacted TiN/Ge and HfGe/Ge Structures, Appl. Phys. Express, 10.1143/APEX.5.051301, Vol. 5, No. 5, 051301-1-3 , 2012.05.
33. H. Yang, D. Wang, H. Nakashima, Influence of SiGe layer thickness and Ge fraction on compressive strain and hole mobility in a SiGe-on-insulator substrate fabricated by the Ge condensation technique, Thin Solid Films, 10.1016/j.tsf.2011.10.078, Vol. 520, No. 8, pp. 3283-3287 , 2012.02.
34. H. Yang, D. Wang, H. Nakashima, Significant Improvement of SiO2/4H-SiC Interface Properties Using Electron Cyclotron Resonance Nitrogen Plasma Irradiation, J. Electrochem. Soc., 10.1149/2.003201jes, Vol. 159, No. 1, pp. H1-H4 , 2012.01.
35. D. Wang, K. Yamamoto, Hongye, H. Yang, H. Nakashima, Defect Evaluation by Photoluminescence for Uniaxially Strained Si-On-Insulator, J. Electrochem.Soc., 10.1149/2.037112jes, Vol. 158, No. 12, pp. H1221-H1224   , 2011.11.
36. H. Nakashima, Y. Iwamura, K. Sakamoto, D. Wang, K. Hirayama, K. Yamamoto, H. Yang, Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2/GeO2 bilayer passivation, Applied Physics Letters, 10.1063/1.3601480, Vol. 98, No. 25, pp. 252102-1-3, 2011.06.
37. M. Iyota, K. Yamamoto, D. Wang, H.Yang, and H. Nakashima, Ohmic contact formation on n-type Ge by direct deposition of TiN, Applied Physics Letters, 10.1063/1.3590711, Vol. 98, No. 19, pp. 192108-1-3, 2011.05.
38. K. Hirayama, R. Ueno, Y. Iwamura, K. Yoshino, D. Wang, H. Yang, H. Nakashima, Fabrication of Ge Metal–Oxide–Semiconductor Capacitors with High-Quality Interface by Ultrathin SiO2/GeO2 Bilayer Passivation and Postmetallization Annealing Effect of Al, Jpn. J. Appl. Phys. , Vol. 50, pp. 04DA10-1-5, 2011.04.
39. K. Yamamoto, R. Ueno, T. Yamanaka, K. Hirayama, H. Yang, D. Wang, H. Nakashima, High-Performance Ge Metal–Oxide–Semiconductor Field-Effect Transistors with a Gate Stack Fabricated by Ultrathin SiO2/GeO2 Bilayer Passivation, Appl. Phys. Express, 10.1143/APEX.4.051301 , Vol.4, No.5, 051301-1-3, 2011.04.
40. K. Hirayama, K. Yoshino, R.Ueno, Y. Iwamura, H. Yang, D. Wang, H. Nakashima, Fabrication of Ge-MOS capacitors with high quality interface by ultra-thin SiO2/GeO2 bi-layer passivation combined with the subsequent SiO2-depositions using magnetron sputtering, Solid State Electronics, 10.1016/j.sse.2011.01.030, Vol. 60, No.1, pp. 122-127, 2011.02.
41. H. Yang, M. Iyota, S. Ikeura, D. Wang, H. Nakashima, Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al2O3 deposition and subsequent post-annealing, Solid State Electronics, 10.1016/j.sse.2011.01.031, Vol. 60, No.1, pp. 128-133, 2011.02.
42. H. Yang, M. Iyota, S. Ikeura, D. Wang, H. Nakashima, Passivation of Electrically Active Defects in Ge-Rich SiGe-on-Insulator by Al2O3 Deposition and Subsequent Post-Deposition Annealing, Appl. Phys. Express, 10.1143/APEX.3.071302, Vol.3, No.7, 071302-1-3, 2010.07.
43. D. Wang, H. Yang, T. Kitamura, H. Nakashima, Influence of freely diffusing excitons on the photoluminescence spectrum of Si thick films with depth distribution of strain, J. Appl. Phys., Vol. 107, No. 3, pp. 033511-1-5 , 2010.02.
44. H. Yang, D. Wang, H. Nakashima, K. Hirayama, S.Kojima, S. Ikeura, Defect control by Al-deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions, Thin Solid Films, Vol. 518, pp. 2342-2345 , 2010.02.
45. D. Wang, H. Yang, T. Kitamura, H. Nakashima, 325 nm-laser-excited micro-photoluminescence for strained Si films, Thin Solid Films, Vol. 518, pp. 2470-2473, 2010.02.
46. K. Hirayama, W. Kira, K. Yoshino, H. Yang, D. Wang, H. Nakashima, Electrical characterization of High-k Gate Dielectrics on Ge with HfGeN and GeO2 interlayers, Thin Solid Films, Vol. 518, pp. 2505-2508, 2010.02.
47. H. Nakashima, D. Wang and  H. Yang, Optical and Electrical Characterization of Defects in SiGe-On-Insulator, The Electochemical Society Transactions, Vol. 25, No. 7, pp. 99-114, 2009.10.
48. H. Yang, D. Wang, H. Nakashima, Evidence for existence of deep acceptor levels in SiGe-on-insulator substrate fabricated using Ge condensation technique, Applied Physics Letters, Vol.95, No.12, pp.122103-1-3, 2009.09.
49. D. Wang and H. Nakashima, Optical and electrical evaluations of SiGe layers on insulator fabricated using Ge condensation by dry oxidation, Solid-State Electronics, Vol. 53, No. 8, pp. 841-849, 2009.08.
50. H. Nakashima, D. Wang, Y. Sugimoto, Y. Suehiro, K.Yamamoto, M. Kajiwara, K. Hirayama , Electrical and structural evaluations of high-k gate dielectrics fabricated using plasma oxidation and the subsequent annealing for a Hf/SiO2/Si structure, Semicond. Sci. Technol. , Vol. 23, No. 12, pp. 125020-1-6, 2008.12.
51. H. Yang, D. Wang, H. Nakashima, H. Gao, K. Hirayama, K. Ikeda, S. Hata, and H. Nakashima , Influence of top surface passivation on bottom-channel hole mobility of ultrathin SiGe- and Ge-on-insulator, Applied Physics Letters, Vol.93, No.7, pp.072104-1-3, 2008.08.
52. D. Wang, H. Nakashima, J. Morioka and T. Kitamura, Microphotoluminescence evaluation of local strain for freestanding Si membranes with SiN deposition, Applied Physics Letters, Vol. 91, No. 24,pp.241918-1-3, 2007.12.
53. Y. Sugimoto, M. Kajiwara, K. Yamamoto, Y. Suehiro, D. Wang and H. Nakashima, Effective work function modulation of TaN metal gate on HfO2 after postmetallization annealing, Applied Physics Letters, Vol. 91, No. 11,pp.112105-1-3, 2007.09.
54. Y. Sugimoto, K.Yamamoto, and H. Nakashima, Electrical and Structural Properties of TaN Gate Electrodes Fabricated by Wet Etching Using NH4OH/H2O2 Solution and HF Metal Hard Mask, Jpn. J. Appl. Phys, Vol 46, No. 9, pp. L211-L214, 2007.02.
55. Y. Sugimoto, H. Adachi, K.Yamamoto, D. Wang, H. Nakashima, H. Nakashima, Electrical characterization of high-k gate dielectrics fabricated using plasma oxidation and post-deposition annealing of a Hf/SiO2/Si structure, Materials Science in Semiconductor Processing, No.9, pp1031-1036, 2006.11.
56. H. Nakashima, M. Miyao, M. Nakamae,T. Asano, Development of Strained Si-SiGe-on-Insulator Wafers for High Speed ULSI, The 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2006), Proceeding of 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2006), Part1of 3, pp.100-103, 2006.10.
57. D. Wang, S. Ii, H. Nakashima, K. Ikeda, H. Nakashima, K. Matsumomoto, M. Nakamae, Photoluminescence evaluation of defects generated during SiGe-on-insulator virtual substrate fabrication: Temperature ramping process, Applied Physics Letters, Vol.89, No. 4, pp.041916-1-3, 2006.07.
58. D. Wang, A. Ueda, H. Takada, H. Nakashima, Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurements, Physica B, Vol. 376-377, pp. 411-415, 2006.04.
59. T. Terakawa, D. Wang, and H. Nakashima, Role of Heavily B-doped Layer on Low-Temperature Fe Gettering in Bifacial Si Solar Cell Fabrication, Jpn. J. Appl. Phys., Vol. 45, No. 4A, pp. 2643-2647, 2006.04.
60. D. Wang, S. Ii, K. Ikeda, H. Nakashima, M. Ninomiya, M. Nakamae, H. Nakashima, Structural and electrical evaluation for strained Si/SiGe on insulator, Thin Solid Films, Vol. 508, pp. 107-111, 2006.04.
61. D. Wang, K. Matsumoto, M. Nakanae and H. Nakashima, Photoluminescence characterization of strained Si-SiGe-on-Insulator wafers with different Ge fractions, Applied Physics Letters, 10.1063/1.2152109, 87, 25, Vol. 87 No. 25, pp. 251928-1-3, 2005.12.
62. Y. Sugimoto, N. Takata, T. Hirota, K. Ikeda, F. Yoshida, H. Nakashima, H. Nakashima, Low-Temperature Fabrication of Polycrystalline Si Thin Film Using Al-Induced
Crystallization without Native Al Oxide at Amorphous Si/Al Interface, Jpn. J. Appl. Phys., 10.1143/JJAP.44.4770, 44, 7A, 4770-4775, Vol. 44, No. 7A, pp. 4770-4775, 2005.07.
63. D. Wang, H. Nakashima, M. Ninomiya, M. Nakamae, Electrical characterization of Strained Si/SiGe Wafers using transient capacitance mesurements, Applied Physics Letters, 10.1063/1.1891303, 86, 12, Vol. 86 No. 12, pp. 122111-1-3, 2005.03.
64. H. Nakashima, M. Nakamae, M. Miyao, H. Okushi, T. Asano and H. Hagino, Development of Strained Silicon Wafer for Next Generation ULSI, 2004 Asia-Pacific Workshop on Fundamental and Application of Advanced Semicondutor Devices, pp. 75-80, 2004.06.
65. H. Nakashima, D. Wang, T. Noguchi, K. Itani, J. Wang and L. Zhao, Method for Detecting in Silicon-On-Insulator Using Capacitance Transient Spectroscopy, Jpn. J. Appl. Phys., Vol. 43, No. 5A, pp. 2402-2408, 2004.05.
66. L. Zhao, N. H. Luu, D. Wang, Y. Sugimoto, K. Ikeda, H. Nakashima and H. Nakashima, Low-Temperature Growth of Thin Silicon Nitride Film by Electron Cyclotron Resonance Plasma Irradiation, Jpn. J. Appl. Phys., 10.1143/JJAP.43.L47, 43, 1A-B, L47-L49, Vol. 43, No. 1A/B, 2004, pp. L 47-L 49, 2003.12.
67. J. L. Wang, L. Zhao, N. H. Luu, K. Makiyama, D. Wang and H. Nakashima, Growth Kinetics and Electrical Properties of Ultrathin Si Oxide Film Fabricated Using Krypton-Diluted Oxygen Plasma Excited by Electron Cyclotron Resonance, Jpn. J. Appl. Phys., 10.1143/JJAP.42.6496, 42, 10, 6496-6501, Vol. 42, No. 10, pp. 6496-6501, 2003.10.
68. T. Joge, I. Araki, T. Uematsu, T. Warabisako, H. Nakashima and K. Matsukuma, Low-Temperature Boron Gettering for Improving the Carrier Lifetime in Fe-Contaminated Bifacial Silicon Solar Cells with n+pp+ Back-Surface-Field Structure, Jpn. J. Appl. Phys., 10.1143/JJAP.42.5397, 42, 9A, 5397-5404, Vol. 42, No. 9A, pp.5397-5404, 2003.09.
69. S. Matsuo, M. Yamamoto, T. Sadoh, T. Tsurushima, D. W. Gao, K. Furukawa and H. Nakashima, Effects of Ion Irradiation on Silicon Oxidation in Electron Cyclotron Resonance Argon and Oxygen Mixed Plasma, J. Appl. Phys., 10.1063/1.373868, 88, 3, 1664-1669, Vol. 88, No. 3, pp. 1664-1669, 2000.08.
70. J. S. Gao, H. Nakashima, J. L. Wang, K. Iwanaga, H. Nakashima, K. Ikeda, K. Furukawa and K. Muraoka, Optimum Discharge Condition of DC Bias Electron Cyclotron Resonance Plasma
Sputtering for High Quality Si Epitaxial, Jpn. J. Appl. Phys., 10.1143/JJAP.39.2834, 39, 5A, 2834-2838, Vol. 39, No. 5A, pp. 2834-2838, 2000.05.
71. J. S. Gao, H. Nakashima, N. Sakai, D. W. Gao, J. L. Wang, K. Furukawa, K. Muraoka, Growth of Epitaxial Silicon Film at Low Temperature by Using Sputtering-type
Electron Cyclotron Resonance Plasma, Jpn. J. Appl. Phys., 10.1143/JJAP.38.L220, 38, 3A, L220-L222, Vol. 38, No. 3A, pp. L220-L222, 1999.03.
72. D. W. Gao, Y. Kashiwazaki, K. Muraoka, H. Nakashima, K. Furukawa, Y. C. Liu, K. Shibata, T. Tsurushima, Effect of Preoxidation on Deposition of Thin Gate-quality Silicon Oxide Film at Low Temperature by using a Sputter-type Electron Cyclotron Resonance Plasma, J. Appl. Phys., 10.1063/1.366431, 82, 11, 5680-5685, Vol. 82, No. 11, pp. 5680-5685, 1997.12.
73. S. Zhao, A. L. Smith, S. H. Ahn, G. J. Norga, M. T. Platero, H. Nakashima, L. V. C. Assali, J. Michel, L. C. Kimerling, Iron in p-type Silicon: A Comprehensive Model, Proc. 19th Int. Conf. Defects in Semiconductors, 258-2, 429-436, ( Materials Science Forum, Vols. 258-263, Trans. Tech. publ.), pp. 429-436, 1997.12.
74. H. Nakashima, K. Furukawa, Y. C. Liu, D. W. Gao, Y. Kashiwazaki, K. Muraoka, K. Shibata, and T. Tsurushima, Low-temperature Deposition of High-Quality Silicon Dioxide Films by Sputtering-type Electron Cyclotron Resonance Plasma, J. Vac. Sci. and Tech. A, 10.1116/1.580664, 15, 4, 1951-1954, Vol. 15, No. 4, pp. 1951-1954, 1997.08.
75. S. Sakauchi, M. Suezawa, K. Sumino, H. Nakashima, Recombination-Enhanced Fe Atom Jump between the First and the Second Neighbor Site of Fe-acceptor Pair in Si, J. Appl. Phys., 10.1063/1.363695, 80, 11, 6198-6203, Vol. 80, No. 11, pp. 6198-6203, 1996.12.
76. H. Nakashima, T. Sadoh, T. Tsurushima, Electrical and Thermal Properties of Structurally Metastable Iron-Boron Pairs in Silicon, Phys. Rev. B, 10.1103/PhysRevB.49.16983, 49, 24, 16983-16993, Vol. 49, No. 24, pp. 16983—16993, 1994.06.
77. H. Nakashima, T. Sadoh, H. Kitagawa, K. Hashimoto, Diffusion and Electrical Properties of 3d Transition-Metal Impurity Series in Silicon, Proc. 17th Int. Conf. Defects in Semiconductors, 143-, 761-765, ( Materials Science Forum, Vols. 143-147, Trans. Tech. publ.), pp. 761-766, 1994.01.
78. H. Nakashima, T. Sadoh, T. Tsurushima, Hole Traps of Metastable Iron-Boron Pairs in Silicon, J. Appl. Phys., 10.1063/1.353056, 73, 6, 2803-2808, Vol. 73, No. 6, pp. 2803-2808, 1993.03.
79. T. Sadoh, H. Nakashima, T. Tsurushima, Deep Levels of Vanadium and Vanadium-Hydrogen Complex in Silicon, J. Appl. Phys., 10.1063/1.352353, 72, 2, 520-524, Vol. 72, No. 2, pp. 520-524, 1992.07.
80. T. Sadoh, H. Nakashima, Diffusion of Vanadium in Silicon, Appl. Phys. Lett., 10.1063/1.105154, 58, 15, 1653-1655, Vol. 58, No. 15, pp. 1653-1655, 1991.04.
81. H. Nakashima, K. Hashimoto, Method for Estimating Accurate Deep-Trap Densities from DLTS of Junctions Containing Several Kinds of Deep-Traps, Jpn. J. Appl. Phys., 10.1143/JJAP.28.1402, 28, 8, 1402-1406, Vol. 28, No. 8, pp. 1402-1406, 1989.08.
82. T. Isobe, H. Nakashima, K. Hashimoto, Diffusion Coefficient of Interstitial Iron in Silicon, Jpn. J. Appl. Phys., 10.1143/JJAP.28.1282, 28, 7, 1282-1283, Vol. 28, No. 7, pp. 1282-1283, 1989.07.
83. H. Nakashima, T. Isobe, Y. Yamamoto, K. Hashimoto, Diffusion Coefficient of Iron in Silicon at Room Temperature, Jpn. J. Appl. Phys., 10.1143/JJAP.27.1542, 27, 8, 1542-1543, Vol. 27, No. 8, pp. 1542-1543, 1988.08.
84. H. Nakashima, T. Miyagawa, S. Sugitani, K. Hashimoto, Method of Analysis of a Single-Peak DLTS spectrum with Two Overlapping Deep-trap Responses, Jpn. J. Appl. Phys., 10.1143/JJAP.25.205, 25, 2, 205-208, Vol. 25, No. 2, pp. 205-208, 1986.02.
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