||Ryo Ishiura, Akihiko Fujii, Makoto Arita, Koichi Sudoh, Masanori Ozaki, Study on energy level bending at heterojunction of solution-processed phthalocyanine thin film and n-Si by Kelvin probe force microscopy, Organic Electronics, https://doi.org/10.1016/j.orgel.2019.105599, 78, 105599_1-105599_5, 2020.03.
||Fabi Zhang, Congyu Hu, Makoto Arita, Katsuhiko Saito, Tooru Tanakaa, Qixin Guo, Low temperature growth of (AlGa)2O3 films by oxygen radical assisted pulsed laser deposition, CrystEngComm, DOI: 10.1039/c9ce01541h, 22, 142-146, 2020.01.
||Fabi Zhang, Haiou Li, Makoto ARITA, Qixin Guo, Ultraviolet detectors based on (GaIn)2O3 films, Optical Materials Express, 10.1364/OME.7.003769, 7, 10, 3769-3779, 2017.10.
||Rin Haraguchi, Yuuki Yoshimatsu, Takashi Nagaoka, Makoto ARITA, EDALATI KAVEH, Zenji Horita, Electrical resistivity mapping of titanium and zirconium discs processed by high-pressure torsion for homogeneity and phase transformation evaluation, Journal of Materials Science, 10.1007/s10853-017-0916-x, 52, 6778-6788, 2017.02.
||Fabi Zhang, Makoto ARITA, Xu Wang, Zhengwai Chen, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, Teruaki Motooka, Toward controlling the carrier density of Si doped Ga2O3 films by pulsed laser deposition, Applied Physics Letters, 10.1063/1.4962463, 109, 102105-1-102105-5, 2016.09.
||Makoto ARITA, Kazuhisa Torigoe, Takashi Yamauchi, Takashi Nagaoka, Toru Aiso, Yasuhisa Yamashita, Teruaki Motooka, Surface band-bending and Fermi-level pinning in doped Si observed by Kelvin force microscopy, Applied Physics Letters, 10.1063/1.4870419, 104, 132103-1-132103-4, 2014.04, The workfunction change in doped Si was examined using Kelvin force microscopy in a wide range
of doping concentrations from p-type 1019 to n-type 1020 cm3 corresponding to the bulk
Fermi-level positions from near the valence-band top to conduction-band minimum. Experimental
data can be reproduced by model calculations using an appropriate surface-state density composed of
the donor- and acceptor-like gap states. These results indicate that no appreciable surface-band
bending occurs for doping concentrations less than 1014 cm3 while the bending becomes
prominent and the surface Fermi-level is eventually pinned in the midgap region as the concentration
increases to 1020 cm3..
||Makoto Arita, Yu Tabata, Hiroki Sakamoto and Qixin Guo, Photo-electrochemical Properties of Titanium Dioxide Thin Films Prepared by Reactive RF Sputtering Method, Materials Science Forum , 750, 248, 2013.01.
||M. Arita, H. Sakamoto, Y. Tabata, Y. Ikoma, M. Masuda, Photo-electrochemical properties of photocatalytic titanium dioxide films prepared by RF magnetron sputtering, Proceedings of International colloquium on “Recent progress in nanofabrications of MEMS and NEMS: Science and innovation technologies”
, 32-35, 2011.03.
||M. Arita, M. Yamaguchi, and M. Masuda, Electrical and Optical Properties of Germanium-Doped Zinc Oxide Thin Films, Materials Transactions, Vol.45, No.11, (2004) 3180-3183, 2004.11.
||Effects of protium introduction on electrical and optical properties of tin-germanium oxide thin films
M. Arita H. Konishi M. Masuda and Y. Hayashi
||M. Arita H. Konishi K. Matsuda M. Masuda and Y. Hayashi, Effects of hydrogen introduction on electrical and optical properties of Cd-doped Ge oxide and Zn oxide thin films, Mater. Trans., 10.2320/matertrans.43.1142, 43, 5, 1142-1145, Vol.43 No.5 pp.1142-1145, 2002.05.
||M. Arita H. Obata T. Hayashi K. Okuno W.M. Shu Y Hayashi, Ion driven permeation of deuterium through iron coated with silicon oxide film, Fusion Technology, 28, 3, 1132-1137, Vol.28 No. pp.1132-1137, 1995.10.
||M. Arita and Y. Hayashi, Photoelectrochemical properties of anodic oxide film on niobium, Materials Transactions JIM, 35, 4, 233-237, Vol.35 No.4 pp.233-237, 1994.04.