Yoshifumi Ikoma | Last modified date:2024.03.11 |
Assistant Professor /
Functional Materials Science
Department of Materials Science and Engineering
Faculty of Engineering
Department of Materials Science and Engineering
Faculty of Engineering
Graduate School
Undergraduate School
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Homepage
https://kyushu-u.elsevierpure.com/en/persons/yoshifumi-ikoma
Reseacher Profiling Tool Kyushu University Pure
http://zaiko6.zaiko.kyushu-u.ac.jp/
Academic Degree
Doctor of Engineering
Field of Specialization
Semiconductor nanostructures, bulk nanostructured semiconductor materials, thin film growth, epitaxial growth
ORCID(Open Researcher and Contributor ID)
0000-0001-5483-464X
Total Priod of education and research career in the foreign country
00years00months
Outline Activities
1. Bulk nanostructured semiconductor materials by using giant straining process
Nanocrystalline semiconductor materials exhibit unique electrical and optical properties. We investigate the formation of bulk nanostructured semiconductor materials (Si, Ge, GaAs, etc.) by using high-pressure torsion.
2. Thin film growth by using pulse jet CVD
The formation of semiconductor multiple heterostructures on Si substrates is of great interest to those building high-performance electronic and optoelectronic devices. We have reported the epitaxial growth of ultrathin (~3 nm) SiC films and SiC/Si multilayers on Si(100) by supersonic free jet CVD. We have also investigated the formation of semiconductor nanopores by utilizing SiC/Si heteroepitaxial growth, and Si-based nanowires on Si substrates by organosilane pulse jet CVD.
Nanocrystalline semiconductor materials exhibit unique electrical and optical properties. We investigate the formation of bulk nanostructured semiconductor materials (Si, Ge, GaAs, etc.) by using high-pressure torsion.
2. Thin film growth by using pulse jet CVD
The formation of semiconductor multiple heterostructures on Si substrates is of great interest to those building high-performance electronic and optoelectronic devices. We have reported the epitaxial growth of ultrathin (~3 nm) SiC films and SiC/Si multilayers on Si(100) by supersonic free jet CVD. We have also investigated the formation of semiconductor nanopores by utilizing SiC/Si heteroepitaxial growth, and Si-based nanowires on Si substrates by organosilane pulse jet CVD.
Research
Research Interests
- Elucidation of polymorphs and novel properties of SiGe developed by high-pressure phase transformations
keyword : high-pressure phase transformation, metastable phase
2023.04. - Formation of semiconductor bulk nanostructured materials by using High-Pressure Torsion
keyword : HPT, nanocrystalline semiconductor materials
2011.04. - Semiconductor nanocrystal growths by Au-catalyzed pulse jet CVD
keyword : VLS growth
2012.04~2013.03. - Semiconductor nanopore formation by utilizing SiC/Si heteroepitaxial growth
keyword : nanopore
2005.04~2013.03A nanometer-sized pore (nanopore) is of great interest for a possible application to molecular sensors such as DNA sequencers. The solid-state nanopore is mainly fabricated by utilizing ion beam method. However, this techniques are not suitable for mass production. We introduced the pits into the top Si layers of Silicon-on-Insulator (SOI) substrates by SiC/Si heteroepitaxy, and investigate the nanopore formation onto the thin Si layer of SOI substrates.. - SiC/Si nanostructures by supersonic free jet CVD
keyword : Si-based nano structures, supersonic free jet CVD
1999.04~2013.03The formation of semiconductor quantum devices on Si substrates is of great interest to those building high-performance electronic devices. We focus on the growths of nano-scale SiC/Si multilayer structures utilizing supersonic free jet CVD. .
Papers
Presentations
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