| 1. |
Hiroaki Fukuoka, Mahjabin Taskin, Kungen Teii、Yoshimine Kato, Measurement of oxygen concentration in atmospheric air using ultrasound time of flight with humidity compensation, Review of Scientific Instruments, https://doi.org/10.1063/5.0113877, 94, 035001-1-035001-7, 2023.03. |
| 2. |
Huan Zhu, Ting Pan, Ryo Sato, Lusato Majula, Kwati Leonard, Hiroshige Matsumoto, Yoshimine Kato, TiO2/p-Si Paste Heterojunction Fabricated by Rapid Thermal Annealing, Applied Surface Science, https://doi.org/10.1016/j.apsusc.2021.151003, 569, 151003, pp.1-9, 2021.09. |
| 3. |
Yusuke Kuboki, Huan Zhu, Morihiro Sakamoto, Hiroshige Matsumoto, Kungen Teii, Yoshimine Kato, Low temperature annealing of nanocrystalline Si paste for pn junction formation, Materials Science in Semiconductor Processing, https://doi.org/10.1016/j.mssp.2021.106093, 135, 106093-7ページ, 2021.07. |
| 4. |
Huan Zhu, Yusuke Kuboki, Morihiro Sakamoto, Yoshimine Kato, Effect of Low Temperature Annealing on pn Junction Formation using Si Paste, Proc. of 2021 5th IEEE Electron Devices Technology and Manufacturing (EDTM 2021), IEEE Xplore, 10.1109/EDTM50988.2021.9420845, 10-12, 2021.05. |
| 5. |
Akitoshi Matsuda, Yoshimine Kato, Model-based Sensor System for Measuring Gas Concentration by Ultrasound, Proc. of 2020 IEEE 9th Global Conference on Consumer Electronics (GCCE): IEEE Xplore, 10.1109/GCCE50665.2020.9291956, 471-475, 2020.12, In this study, a novel system using ultrasound was developed to instantly measure the gas concentration of two types of mixed gases: diatomic and polyatomic gases, which need nonlinear equations to calculate. This system incorporates a set of ultrasound sensors, arithmetic circuits, and a thermometer to accurately measure and calculate the concentration of the gases. Hardware was developed for the arithmetic circuits that numerically analyzed the newly developed nonlinear equations. To evaluate the accuracy and the calculation speed of the hardware in the early stage of design, developing effective design methods was critical. These are described using a model-based design method.. |
| 6. |
Huan Zhu, Morihiro Sakamoto, Ting Pan, Takaya Fujisaki, Hiroshige Matsumoto,
Kungen Teii, Yoshimine Kato, Rapid Thermal Annealing of Si paste film and pn-junction formation, Nanotechnology, 10.1088/1361-6528/ab9aed, 31, 38, 385202, 2020.07, A Si nanoparticle paste has been studied to form a Si film on a substrate. Rapid thermal
annealing (RTA) was conducted in order to recrystallize the Si paste which were prepared by a
planetary ball milling grinding n-doped or p-doped Si chips. It was possible to minimize the
oxidation during the melting process of Si nanoparticles with this RTA even at 1200 ◦C in 1 s.
Lowering of the melting temperature appears to be due to the size effect and release of surface
energy from the Si nanoparticles. RTA was conducted in an infrared furnace with temperatures
varying from 1150 to 1300 ◦C. Si pn homo-junction structure was also fabricated by coating
p-type followed by n-type Si pastes on a carbon substrate. Typical rectifying characteristics and
slight photo-induced current was observed.. |
| 7. |
Mahjabin Taskin, Takuya Kido, Masahiro Inoue、Yoshimine Kato, Ultrasound propagation in two-layer gas flow, Int. J. Hydrogen Energy,, https://doi.org/10.1016/j.ijhydene.2019.08.192, 44, 27626-27634, 2019.09, The ultrasonic signal propagation in two-layer gas flow was studied. The intensity degradation
of the signal was observed while the signal was propagating through the airhydrogen-
air two-layer gas flowing system. The concentration of flowing hydrogen (H2)
gas was measured using ultrasound from the exterior of the pipe, and it was calculated
that the intensity degradation of signal did not simply depend on the H2 concentration,
however, the intensity varied every second. Schlieren photography was taken to visualize
the motion of H2 gas after injecting into the flowing air of 2 m/s. It was observed that high
concentration H2 gas was flowing in the middle of the airflow without quick diffusion into
the air. A two-dimensional air-H2-air gas flow model was considered where 100% H2 was
flowing in the middle of the airflow, and the gas layers were separated by two fluctuated
interfaces. According to the calculation using this model, only limited conditions of the
signals can reach to the receiver due to the refraction at the fluctuating air-H2-air gas interfaces
while propagating. It was found that the receiver could hardly detect the signals;
hence, the intensity of the signal looked degraded.. |
| 8. |
Mahjabin Taskin, 内海銀志朗、加藤 喜峰, Observation of Ultrasonic Signal and Measurement of H2 Concentration from the Exterior of a Metal Pipe, Int. J. Hydrogen Energy,, https://doi.org/10.1016/j.ijhydene.2019.06.159, 44, 41, 23503-23512, 2019.08, Concentration of H2 gas in a stainless steel (SUS) pipe is measured by using ultrasound
from the exterior of a pipe without making a hole. Gas concentration is calculated by the
variation of ultrasound speed detected. A sound absorbing material is put on the outer
surface of the SUS pipe to reduce the ultrasonic signal noise circulating through the shell of
the SUS pipe. Then it is possible to measure the gas concentration by observing the
airborne signal passing through the SUS pipe. Propagation of ultrasound wave in SUS pipe
is also simulated by the finite-difference-time-domain method that could explain the ultrasound
propagation signals in the SUS pipe.. |
| 9. |
Mahjabin Taskin, 加藤 喜峰, Instant Gas Concentration Measurement Using Ultrasound from Exterior of a Pipe, IEEE Sensors Journal, 19, 11, 4017-4024, 2019.05, Concentration of a gas flowing inside a pipe was
measured by using ultrasound from the exterior of a pipe without
extracting the gas from the pipe. The concentration of the gas
can be measured based on speed variation of the ultrasound
traveling inside the pipe. Drilling a hole in the pipe to extract
the gases is not necessary for the gas concentration measurement.
In this paper, the concentration of hydrogen gas in the air was
measured accurately while the air was flowing inside the pipe.
Various airflow speeds were examined, and it was estimated that
it is possible to measure the gas concentration for more than
about 60 m/s of the airflow rate. The response time for measuring
gas concentration was less than 0.1 s.. |
| 10. |
Mahjabin Taskin, 木戸 拓哉, 加藤 喜峰, Flowing H2 Gas Concentration Measurement Using Ultrasound from Exterior of the Pipe, Proc. of IEEE Sensors 2018, IEEE Xplore, 10.1109/ICSENS.2018.8589539, 1-3, 2018.12, Flowing H2 gas concentration was measured for the first time by using ultrasound. H2 was flowing inside a pipe and the concentration was measured from exterior of the pipe without extracting the gas from the pipe. The concentration measurement was based on speed variation of the ultrasound travelling inside the pipe through the gases. To measure the H2 concentration drilling a hole in the pipe to extract the gases is not necessary. In this study, concentration of the H2 gas in a flowing air was measured accurately inside the pipe. It was found that it is possible to measure the H2 gas concentration variation in more than 50 m/s of the airflow. The response time of measuring the gas concentration was less than 0.1 s.. |
| 11. |
Hydrogen Sensing using Ultrasound: Gas Concentration Absolute and Non-contact Measurement. |
| 12. |
N. Shimoda, Yoshimine Kato, KUNGEN TEII, Electrical contacts to nanocrystalline diamond films studied at high temperatures, JOURNAL OF APPLIED PHYSICS, 120, 235706-1-235706-6, 2016.12. |
| 13. |
M. Goto, R. Amano, N. Shimoda, KUNGEN TEII, Yoshimine Kato, Rectification properties of n-type nanocrystalline diamond heterojunctions to p-type silicon carbide at high temperatures, APPLIED PHYSICS LETTERS, 104, 153113-1-153113-4, 2014.04. |
| 14. |
葛晰遥, 平松 智寛, 加藤 喜峰, Hydrogen Gas Concentration Measurement From Exterior of a Pipeline by Using Ultrasonic, Proc. International Conference on Hydrogen Production 2014, A06, 77-77, 1-2F-3, 2014.02. |
| 15. |
The Specific Heat Ratio of Hydrogen and Helium Measured using Ultrasonic Wave
. |
| 16. |
Various Ohmic Contacts of Nanocrystalline Diamond Films. |
| 17. |
Hydrogen Gas Concentration Measurement in a Pipe by Using Ultrasonic
. |
| 18. |
Gas Concentration Measurment using Ultrasonic. |
| 19. |
Hiroaki Fukuoka, Jinhyuck Jung, Masahiro INOUE, Hideaki FUJITA, Yoshimine Kato, Absolute Concentration Measurement for Hydrogen, Energy Procedia, 29, 283-290, 2012.12. |
| 20. |
Yoshimine Kato, M. Goto, R. Amano, N. Shimoda, KUNGEN TEII, Electrical Characteristics of 4H-SiC/Nanocrystalline Diamond pn Junctions, Proc. of Diamond and Carbon Materials 2012, 2012, p.O16, 2012.09. |
| 21. |
Hiroaki Fukuoka, Masahiro Inoue, Yoshimine Kato, and Hideaki Fujita, Gas Concentration Measurment using Ultrasonic, Proc. of 1st IEEE Global Conference on Consumer Electronics 2012 (GCCE2012), 2012, p.67-68 , 2012.10. |
| 22. |
Hiroaki Fukuoka, Jinhyuck Jung, Hideaki FUJITA, Yoshimine KATO, and Masahiro INOUE, Standard Measurement of Hydrogen Concentration using Ultrasonic, Proc. of 19th World Hydrogen Energy Conference 2012 (WHEC2012), 2012, A105, 2012.06. |
| 23. |
Ryo Amano, Masaki Goto, Yoshimine Kato, Kungen Teii, Fabrication of 4H-SiC/nanocrystalline diamond pn junctions, Materials Science Forum, Vol.717-720, pp.1009-1012 , 2012.03. |
| 24. |
Jinhyuck Jung, Masashi SONOYAMA, Hideaki FUJITA, and Yoshimine KATO, The novel hydrogen sensor using ultrasonic, International Congress on Hydrogen Production (ICH2P-11), 2011, 160ELE1- 8, 2011.06. |
| 25. |
Yoshimine Kato, Masaki Goto, Ryota Sato, Kazuhiro Yamada, Akira Koga, Kungen Teii, Chenda Srey, Satoru Tanaka, Formation of epitaxial 3C-SiC layers by microwave plasma-assisted carbonization, Surface & Coatings Technology, Vol.206, pp. 990-993, 2011.06. |
| 26. |
M. Goto, A. Koga, K. Yamada, Y. Kato, K. Teii,, Fabrication of n-type nanocrystalline diamond/3C-SiC/p-Si(001) junctions, Materials Science Forum, Vol.679-680, pp. 524-527, 2011.03. |
| 27. |
Akira KOGA, Kungen TEII, Masaki GOTO, Kazuhiro YAMADA, Yoshimine KATO, Growth and electrical properties of 3C-SiC/nanocrystalline diamond layered films, Jpn. J. Appl. Phys., 50, 1, 01AB08, 2011.01. |
| 28. |
Masashi SONOYAMA, Hideaki Fujita, Yoshimine Kato, Application of Ultrasonic to a Hydrogen Sensor, IEEE SENSORS 2010 Conference, 2010, 2141-2144, 2010.11. |
| 29. |
Yasushi Kato, Masatoshi Ito, Yoshimine Kato and Osamu Furukimi, Effect of Si on Precipitation Behavior of Nb-Laves Phase and Amount of Nb in Solid Solution at Elevated Temperature in High Purity 17%Cr-0.5%Nb Steels, MATERIALS TRANSACTIONS, 9, 1531-1535, 2010.09. |
| 30. |
Yoshimine Kato, Masahiro Inoue, Hideaki Fujita, Hiroshi Baba, Katsumi Ohira, A Hydrogen Sensor using Ultrasonics for Automotive Application, 自動車技術会論文集, 41, 129-133, 2010.01. |
| 31. |
Ayataka Endo, Mai Ogasawara, Atsushi Takahashi, Daisuke Yokoyama, Yoshimine Kato and Chihaya Adachi, Thermally activated delayed fluorescence from Sn4+-porphyrin complexes and their application to organic light emitting diodes – a novel mechanism for electroluminescence, Advanced Materials, 21, 4802-4806, 2009.11. |
| 32. |
Yoshimine Kato and Kazuo Sakumoto, Island formation of SiC film on striated Si(001) substrates, Materials Science Forum, Vol.600-603, pp. 227-230, 2009.01. |
| 33. |
Takayoshi MASAKI, Shinji KAWAI, Yoshimine KATO, and Teruaki MOTOOKA, Visible Cathode Luminescence of Oxidized Dy-Doped Si Films, Jpn. J. Appl. Phys., Vol.46, No.8A, pp. 5196-5198, 2007.08. |
| 34. |
Yoshimine Kato, Hiroyuki Kamiya, Yukito Saitoh, A diamond-like carbon film as a self-alignment layer for LCDs, Diamond & Related Materials , 16, pp.296–301, 2007.01. |
| 35. |
Yoshimine KATO Yoshimasa KAIDA Yuki MIYOSHI Masakazu ATSUMI and James STATHIS, a-SiGe:H and a-SiGeC:H black-matrix for Liquid Crystal Displays, Jpn. J. Appl. Phys., Vol.43 No.1 pp.30-34, 2004.01. |
| 36. |
Doyle JP Chaudhari P Lacey JL Galligan EA Lien SC Callegari AC Lang ND Lu M Nakagawa Y Nakano H Okazaki N Odahara S Katoh Y Saitoh Y Sakai K Satoh H Shiota Y, Ion beam alignment for liquid crystal display fabrication, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol.206 No. pp.467-471, 2003.05. |
| 37. |
P. CHAUDHARI J. LACEY J. DOYLE S. LIEN A. CALLEGARI M. SAMANT J. STOHR Y. NAKAGAWA Y. KATO Y. SAITOH K. SAKAI H. SATOH S. ODAHARA, Atomic-beam alignment of inorganic materials for liquid-crystal displays, Nature, Vol.411 No. pp.56-59, 2001.05. |
| 38. |
Y. KATO and Y. HAYASHI, Investigation of vertical crosstalk for a TFT-LCD with an inorganic black matrix on the array, J. Soc. Info. Display, Vol.5 No.6 pp.387-392, 1997.05. |
| 39. |
Y. KATO Y. MIYOSHI M. ATSUMI Y. KAIDA S. WRIGHT and L PALMATEER, Characteristics of a-Si Thin-film Transistors with an Inorganic Black Matrix on the Top, IEICE Transaction on Electronics, Vol.E79-C No.8 pp.1091-1096, 1996.08. |
| 40. |
Y. KATO S. FUKATSU and Y. SHIRAKI, Postgrowth of a Si contact layer on an air-exposed Si1-xGex/Si single quantum well grown by gas-source molecular beam epitaxy for use in an electroluminescent device, J. Vac. Sci. Tech., Vol.B13 No.1 pp.111-117, 1995.05. |
| 41. |
Y. KATO S.FUKATSU N. USAMI and Y. SHIRAKI, A Si1-xGex/Si single quantum well p-i-n structure grown by solid-source and gas-source "hybrid" molecular beam epitaxy, J. Crystal Growth, Vol.136 No. pp.355-360, 1994.12. |
| 42. |
S. FUKATSU N. USAMI Y. KATO H. SUNAMURA Y. SHIRAKI H. OKU T. OHNISHI Y. OHMORI and K. OKUMURA, Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells, J. Crystal Growth, Vol.136 No. pp.315-321, 1994.12. |
| 43. |
Y. KATO Y. TAKAHASHI S. FUKATSU Y. SHIRAKI and R. ITO, Observation of the Stark effect in GaAs/AlGaAs coupled quantum wells by electroluminescence and circularly polarized photoluminescence excitation, Materials Research Society Symposium Proceedings, Vol.326 No. pp.501-506, 1994.11. |
| 44. |
Y. TAKAHASHI Y. KATO S. KANO S. FUKATSU Y. SHIRAKI and R. ITO, The effect of electric field on the excitonic states in coupled quantum well structures, J. Appl. Phys., Vol.76 No.4 pp.2299-2305, 1994.08. |
| 45. |
Y. KATO Y. TAKAHASHI S. FUKATSU Y. SHIRAKI and R. ITO, Observation of the Stark effect in coupled quantum wells by electroluminescence and circularly polarized photoluminescence excitation spectroscopy, J. Appl. Phys., Vol.75 No. pp.7476-7481, 1994.06. |
| 46. |
Y. KATO Y. TAKAHASHI S. FUKATSU Y. SHIRAKI and R. ITO, Quantum-confined Stark shift observed by electro-luminescence and circularpolarized luminescence excitation spectroscopy in GaAs/AlxGa1-xAs coupled quantum wells, J. Vac. Sci. Tech., Vol.B12 No.2 pp.1053-1055, 1994.04. |
| 47. |
Y. KATO S. FUKATSU and Y. SHIRAKI, Solid- and Gas-Source "Hybrid" Si molecular beam epitaxy growth for a Si1-xGex/Si quantum well electroluminescent device', J. Electronic Materials, Vol.23 No.1 pp.47-51, 1994.01. |
| 48. |
Y. KATO S.FUKATSU N. USAMI and Y. SHIRAKI, Hybrid Si molecular beam epitaxial regrowth for a strained Si1-xGex/Si single-quantum-well electroluminescent device, Appl. Phys. Lett., Vol.63(17), pp.2414-2416, 1993.01. |
