Kyushu University Academic Staff Educational and Research Activities Database
List of Papers
Yoshimine Kato Last modified date:2021.08.26

Associate Professor / Advanced Material Physics / Department of Materials Science and Engineering / Faculty of Engineering


Papers
1. Huan Zhu, Ting Pan, Ryo Sato, Lusato Majula, Kwati Leonard, Hiroshige Matsumoto, Yoshimine Kato, TiO2/p-Si Paste Heterojunction Fabricated by Rapid Thermal Annealing, Applied Surface Science, 2021.09.
2. Yusuke Kuboki, Huan Zhu, Morihiro Sakamoto, Hiroshige Matsumoto, Kungen Teii, Yoshimine Kato, Low temperature annealing of nanocrystalline Si paste for pn junction formation, Materials Science in Semiconductor Processing, https://doi.org/10.1016/j.mssp.2021.106093, 135, 106093-7ページ, 2021.07.
3. Huan Zhu, Yusuke Kuboki, Morihiro Sakamoto, Yoshimine Kato, Effect of Low Temperature Annealing on pn Junction Formation using Si Paste, Proc. of 2021 IEEE Electron Devices Technology and Manufacturing (EDTM 2021), IEEE Xplore, 10.1109/EDTM50988.2021.9420845, 10-12, 2021.05.
4. Akitoshi Matsuda, Yoshimine Kato, Model-based Sensor System for Measuring Gas Concentration by Ultrasound, Proc. of 2020 IEEE 9th Global Conference on Consumer Electronics (GCCE): IEEE Xplore, 10.1109/GCCE50665.2020.9291956, 471-475, 2020.12, In this study, a novel system using ultrasound was developed to instantly measure the gas concentration of two types of mixed gases: diatomic and polyatomic gases, which need nonlinear equations to calculate. This system incorporates a set of ultrasound sensors, arithmetic circuits, and a thermometer to accurately measure and calculate the concentration of the gases. Hardware was developed for the arithmetic circuits that numerically analyzed the newly developed nonlinear equations. To evaluate the accuracy and the calculation speed of the hardware in the early stage of design, developing effective design methods was critical. These are described using a model-based design method..
5. Huan Zhu, Morihiro Sakamoto, Ting Pan, Takaya Fujisaki, Hiroshige Matsumoto, Kungen Teii, Yoshimine Kato, Rapid Thermal Annealing of Si paste film and pn-junction formation, Nanotechnology, 10.1088/1361-6528/ab9aed, 31, 38, 385202, 2020.07, A Si nanoparticle paste has been studied to form a Si film on a substrate. Rapid thermal
annealing (RTA) was conducted in order to recrystallize the Si paste which were prepared by a
planetary ball milling grinding n-doped or p-doped Si chips. It was possible to minimize the
oxidation during the melting process of Si nanoparticles with this RTA even at 1200 ◦C in 1 s.
Lowering of the melting temperature appears to be due to the size effect and release of surface
energy from the Si nanoparticles. RTA was conducted in an infrared furnace with temperatures
varying from 1150 to 1300 ◦C. Si pn homo-junction structure was also fabricated by coating
p-type followed by n-type Si pastes on a carbon substrate. Typical rectifying characteristics and
slight photo-induced current was observed..
6. Mahjabin Taskin, Takuya Kido, Masahiro Inoue、Yoshimine Kato, Ultrasound propagation in two-layer gas flow, Int. J. Hydrogen Energy,, https://doi.org/10.1016/j.ijhydene.2019.08.192, 44, 27626-27634, 2019.09, The ultrasonic signal propagation in two-layer gas flow was studied. The intensity degradation
of the signal was observed while the signal was propagating through the airhydrogen-
air two-layer gas flowing system. The concentration of flowing hydrogen (H2)
gas was measured using ultrasound from the exterior of the pipe, and it was calculated
that the intensity degradation of signal did not simply depend on the H2 concentration,
however, the intensity varied every second. Schlieren photography was taken to visualize
the motion of H2 gas after injecting into the flowing air of 2 m/s. It was observed that high
concentration H2 gas was flowing in the middle of the airflow without quick diffusion into
the air. A two-dimensional air-H2-air gas flow model was considered where 100% H2 was
flowing in the middle of the airflow, and the gas layers were separated by two fluctuated
interfaces. According to the calculation using this model, only limited conditions of the
signals can reach to the receiver due to the refraction at the fluctuating air-H2-air gas interfaces
while propagating. It was found that the receiver could hardly detect the signals;
hence, the intensity of the signal looked degraded..
7. Mahjabin Taskin, 内海銀志朗、加藤 喜峰, Observation of Ultrasonic Signal and Measurement of H2 Concentration from the Exterior of a Metal Pipe, Int. J. Hydrogen Energy,, https://doi.org/10.1016/j.ijhydene.2019.06.159, 44, 41, 23503-23512, 2019.08, Concentration of H2 gas in a stainless steel (SUS) pipe is measured by using ultrasound
from the exterior of a pipe without making a hole. Gas concentration is calculated by the
variation of ultrasound speed detected. A sound absorbing material is put on the outer
surface of the SUS pipe to reduce the ultrasonic signal noise circulating through the shell of
the SUS pipe. Then it is possible to measure the gas concentration by observing the
airborne signal passing through the SUS pipe. Propagation of ultrasound wave in SUS pipe
is also simulated by the finite-difference-time-domain method that could explain the ultrasound
propagation signals in the SUS pipe..
8. Mahjabin Taskin, 加藤 喜峰, Instant Gas Concentration Measurement Using Ultrasound from Exterior of a Pipe, IEEE Sensors Journal, 19, 11, 4017-4024, 2019.05, Concentration of a gas flowing inside a pipe was
measured by using ultrasound from the exterior of a pipe without
extracting the gas from the pipe. The concentration of the gas
can be measured based on speed variation of the ultrasound
traveling inside the pipe. Drilling a hole in the pipe to extract
the gases is not necessary for the gas concentration measurement.
In this paper, the concentration of hydrogen gas in the air was
measured accurately while the air was flowing inside the pipe.
Various airflow speeds were examined, and it was estimated that
it is possible to measure the gas concentration for more than
about 60 m/s of the airflow rate. The response time for measuring
gas concentration was less than 0.1 s..
9. Yan Li, Y. Kato,, Removal of oxides and surface texturization of crystalline Si wafer by ion beam etching, DEStech Transactions on Computer Science and Engineering, 10.12783/dtcse/ccme2018/28659, CCME2018, 510-515, 2019.01.
10. Mahjabin Taskin, 木戸 拓哉, 加藤 喜峰, Flowing H2 Gas Concentration Measurement Using Ultrasound from Exterior of the Pipe, Proc. of IEEE Sensors 2018, IEEE Xplore, 10.1109/ICSENS.2018.8589539, 1-3, 2018.12, Flowing H2 gas concentration was measured for the first time by using ultrasound. H2 was flowing inside a pipe and the concentration was measured from exterior of the pipe without extracting the gas from the pipe. The concentration measurement was based on speed variation of the ultrasound travelling inside the pipe through the gases. To measure the H2 concentration drilling a hole in the pipe to extract the gases is not necessary. In this study, concentration of the H2 gas in a flowing air was measured accurately inside the pipe. It was found that it is possible to measure the H2 gas concentration variation in more than 50 m/s of the airflow. The response time of measuring the gas concentration was less than 0.1 s..
11. Koki Ota, Yoshimine Kato, Kungen Teii, Formation of nanocrystalline diamond cones by reactive ion etching in microwave plasma for enhancing field emission, Japanese Journal of Applied Physics, https://doi.org/10.7567/1347-4065/aaed9f, 58, 1, 016003-1-016003-6, 2018.12, [URL].
12. 井上雅弘, 加藤 喜峰, Bing-rui Li, Development of a New Remote Sensor for Concentration and Location of Various Gases in Mines, Proc. International Symposium in Mine Ventilation (SIVM 2018), 41-50, 2018.11.
13. 井上雅弘, 加藤 喜峰, Bing-rui Li, In situ Measurement of Thermal Conductivity and Diffusivity of Rock, Proc. International Symposium in Mine Ventilation (SIVM 2018), 377-386, 2018.11.
14. Mahjabin Taskin, 木戸 拓哉, 井上雅弘, 加藤 喜峰, Methane Detection in a Mine Ventilation Airflow using Ultrasound from Exterior of the Pipe, Proc. International Symposium in Mine Ventilation (SIVM 2018), 177-184, 2018.11.
15. Mahjabin Taskin, 木戸 拓哉, 井上雅弘, 加藤 喜峰, Ultrasonic Flow Meter for Mine Ventilation, Proc. International Symposium in Mine Ventilation (SIVM 2018), 291-296, 2018.11.
16. Mahjabin Taskin, 内海 銀志朗, 加藤 喜峰, Observation of Ultrasound Wave from Exterior of a Metal Pipe for Flowing Gas Measurement, Proc. of IWPMA2018 (Workshop on Piezoelectric Materials and Applications in Actuators), 85-85, 2018.09.
17. Hydrogen Sensing using Ultrasound: Gas Concentration Absolute and Non-contact Measurement.
18. Koki Ota, Y. Kaneko, K. Terada, Yoshimine Kato, Kungen Teii, Field Emission Characteristics of Metal-Coated Nanocrystalline Diamond Films, ECS J. Solid State Sci. Technol., 7, 369-373, 2018.07.
19. Hirotsugu Tsuchida, Masatoshi Aramaki, Furukimi Osamu, Yoshimine Kato, Hydrogen Trap in Fine Ca(OH)2 Powder Made from Scallop-Shell Waste, ECS Transaction, 75, 31-38, 2017.01.
20. N. Shimoda, Yoshimine Kato, KUNGEN TEII, Electrical contacts to nanocrystalline diamond films studied at high temperatures, JOURNAL OF APPLIED PHYSICS, 120, 235706-1-235706-6, 2016.12.
21. 加藤 喜峰, Masahiro INOUE, Hiroshi Furukawa, 岩倉宗弘, Wireless network of gas concentration detection using ultrasonic devices, Proc. INTERNATIONAL MINE VENTILATION CONGRESS 2014, 10, 205-207, 2014.08.
22. M. Goto, R. Amano, N. Shimoda, KUNGEN TEII, Yoshimine Kato, Rectification properties of n-type nanocrystalline diamond heterojunctions to p-type silicon carbide at high temperatures, APPLIED PHYSICS LETTERS, 104, 153113-1-153113-4, 2014.04.
23. 葛晰遥, 平松 智寛, 加藤 喜峰, Hydrogen Gas Concentration Measurement From Exterior of a Pipeline by Using Ultrasonic, Proc. International Conference on Hydrogen Production 2014, A06, 77-77, 1-2F-3, 2014.02.
24. The Specific Heat Ratio of Hydrogen and Helium Measured using Ultrasonic Wave
.
25. Various Ohmic Contacts of Nanocrystalline Diamond Films.
26. Hydrogen Gas Concentration Measurement in a Pipe by Using Ultrasonic
.
27. N. Shimoda, R. Amano, Y. Kato, K. Teii, The Ohmic Electrode of the Thin Nanocrystalline Diamond Film at High Temperatures, Proc. of Diamond and Carbon Materials 2013, 2013, P1.105, 2013.09.
28. Gas Concentration Measurment using Ultrasonic.
29. Hiroaki Fukuoka, Jinhyuck Jung, Masahiro INOUE, Hideaki FUJITA, Yoshimine Kato, Absolute Concentration Measurement for Hydrogen, Energy Procedia, 29, 283-290, 2012.12.
30. Yoshimine Kato, M. Goto, R. Amano, N. Shimoda, KUNGEN TEII, Electrical Characteristics of 4H-SiC/Nanocrystalline Diamond pn Junctions, Proc. of Diamond and Carbon Materials 2012, 2012, p.O16, 2012.09.
31. Hiroaki Fukuoka, Masahiro Inoue, Yoshimine Kato, and Hideaki Fujita, Gas Concentration Measurment using Ultrasonic, Proc. of 1st IEEE Global Conference on Consumer Electronics 2012 (GCCE2012), 2012, p.67-68 , 2012.10.
32. Hiroaki Fukuoka, Jinhyuck Jung, Hideaki FUJITA, Yoshimine KATO, and Masahiro INOUE, Standard Measurement of Hydrogen Concentration using Ultrasonic, Proc. of 19th World Hydrogen Energy Conference 2012 (WHEC2012), 2012, A105, 2012.06.
33. Ryo Amano, Masaki Goto, Yoshimine Kato, Kungen Teii, Fabrication of 4H-SiC/nanocrystalline diamond pn junctions, Materials Science Forum, Vol.717-720, pp.1009-1012 , 2012.03.
34. Masaki Goto, Ryo Amano, Yoshimine Kato, Kungen Teii, Fabrication and characterization of Si/ and SiC/nanocrystalline diamond pn junctions, Proc. Int. Conf. on Silicon Carbide and Related Materials 2011 (ICSCRM 2011) , p.296 , 2011.09.
35. Jinhyuck Jung, Masashi SONOYAMA, Hideaki FUJITA, and Yoshimine KATO, The novel hydrogen sensor using ultrasonic, International Congress on Hydrogen Production (ICH2P-11), 2011, 160ELE1- 8, 2011.06.
36. Yoshimine Kato, Masaki Goto, Ryota Sato, Kazuhiro Yamada, Akira Koga, Kungen Teii, Chenda Srey, Satoru Tanaka, Formation of epitaxial 3C-SiC layers by microwave plasma-assisted carbonization, Surface & Coatings Technology, Vol.206, pp. 990-993, 2011.06.
37. M. Goto, A. Koga, K. Yamada, Y. Kato, K. Teii,, Fabrication of n-type nanocrystalline diamond/3C-SiC/p-Si(001) junctions, Materials Science Forum, Vol.679-680, pp. 524-527, 2011.03.
38. Akira KOGA, Kungen TEII, Masaki GOTO, Kazuhiro YAMADA, Yoshimine KATO, Growth and electrical properties of 3C-SiC/nanocrystalline diamond layered films, Jpn. J. Appl. Phys., 50, 1, 01AB08, 2011.01.
39. Masashi SONOYAMA, Hideaki Fujita, Yoshimine Kato, Application of Ultrasonic to a Hydrogen Sensor, IEEE SENSORS 2010 Conference, 2010, 2141-2144, 2010.11.
40. Toshiyasu ETO, Naoya YAMADA, Yoshimine KATO, Masatoshi ARAMAKI, Yoshimasa FUNAKAWA and Osamu FURUKIMI , Fatigue Strength in High Strength Steel Sheet with a Punched Hole, Proc. of International Conference on Advanced Steels (ICAS), FR032, 2010.11.
41. Satoshi UCHIDA, Takasi YAMAMOTO, Masayuki YAMAMOTO, Masatoshi ARAMAKI, Yoshimine KATO, Kyono YASUDA and Osamu FURUKIMI, Nano-indentated Hardness of Bainite Phase in 0.8%C Dual Phase Steels, Proc. of International Conference on Advanced Steels (ICAS), FR042, 2010.11.
42. Yoshimine Kato, Masashi SONOYAMA, An Ultrasonic Hydrogen Sensor for practical use, Proc. of the 12th Int. Symp. on Materials Science and Engineering between Kyushu Univ. and Chonbuk National Univ., 2010, 17-20, 2010.10.
43. Yasushi Kato, Masatoshi Ito, Yoshimine Kato and Osamu Furukimi, Effect of Si on Precipitation Behavior of Nb-Laves Phase and Amount of Nb in Solid Solution at Elevated Temperature in High Purity 17%Cr-0.5%Nb Steels, MATERIALS TRANSACTIONS, 9, 1531-1535, 2010.09.
44. Yoshimine KATO, Akira KOGA, Masaki GOTO, Kazuhiro YAMADA, Kungen TEII, Growth of 3C-SiC/nanocrystalline diamond films on Si (001) by microwave plasma-assisted carbonization and deposition, Proc. of 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 8th), TP-156, 2010.09.
45. Yoshimine Kato, Masashi SONOYAMA, Hideaki Fujita, An Ultrasonic Hydrogen Sensor, Proc. of 2010 Korean Ceramic Society, 2010, B-7, 2010.04.
46. Yoshimine Kato, Masahiro Inoue, Hideaki Fujita, Hiroshi Baba, Katsumi Ohira, A Hydrogen Sensor using Ultrasonics for Automotive Application, 自動車技術会論文集, 41, 129-133, 2010.01.
47. Ayataka Endo, Mai Ogasawara, Atsushi Takahashi, Daisuke Yokoyama, Yoshimine Kato and Chihaya Adachi, Thermally activated delayed fluorescence from Sn4+-porphyrin complexes and their application to organic light emitting diodes – a novel mechanism for electroluminescence, Advanced Materials, 21, 4802-4806, 2009.11.
48. 園山 将士、藤田 秀朗、加藤 喜峰, 超音波を用いた水素センサーの温度特性, Proc. of Symposium on Ultrasonic Electronics, Vol. 30 (2009), 2009.11.
49. Yoshimine Kato, Tomohiko Horikawa, Tomohiro Ikeda and Kungen Teii, SiC and nanocrystalline diamond coating on Si substrates fabricated by microwave plasma CVD, Proc. of 16th International Conference on Surface Modification of Materials by Ion Beams -SMMIB2009-, 2009.09.
50. Yoshimine Kato, Masahiro Inoue, Hideaki Fujita, Hiroshi Baba, and Katsumi Ohira, A Hydrogen Sensor using Ultrasonic for Automotive Application, Proceedings of 2009 The Society of Automotive Engineers of Japan (JSAE) Annual Congress, Vol.53-09, pp. 5-9, 2009.05.
51. Yoshimine Kato and Kazuo Sakumoto, Island formation of SiC film on striated Si(001) substrates, Materials Science Forum, Vol.600-603, pp. 227-230, 2009.01.
52. Ayataka Endo, Mai Ogasawara, Atsushi Takahashi, Yoshimine Kato and Chihaya Adachi, Photophysical and Electroluminescent Properties of SnF2-OEP having Thermally Activated Delayed Fluorescence. , Materials Research Society, Boston, H5.23, 2008.12.
53. Yoshimine Kato, A Hydrogen Sensor using Ultrasonic, Proc. of Symposium on Ultrasonic Electronics, Vol.29, pp.215-216, 2008.11.
54. Yoshimine Kato, Characteristics of amorphous carbon film used for an alignment layer of LCDs, Materials Science Research Journal, Vol.1, No.3/4, pp. 235-248, 2008.08.
55. Yoshimine Kato, Diamond like carbon (DLC) films applied for liquid crystal display alignment layer, Proc. of 2008 ITRI and KU joint Symposium on semiconductor and FPD, pp.III-15-26, 2008.07.
56. Yoshimine Kato, Nucleation of SiC on as-received and undulated Si(001) substrates, Proc. of International Conference on Silicon Carbide and Related Materials 2007, 2007.10.
57. Takayoshi MASAKI, Shinji KAWAI, Yoshimine KATO, and Teruaki MOTOOKA, Visible Cathode Luminescence of Oxidized Dy-Doped Si Films, Jpn. J. Appl. Phys., Vol.46, No.8A, pp. 5196-5198, 2007.08.
58. Yoshimine Kato, Hiroyuki Kamiya, Yukito Saitoh, A diamond-like carbon film as a self-alignment layer for LCDs, Diamond & Related Materials , 16, pp.296–301, 2007.01.
59. Shinji Kawai, Takayoshi Masaki, Yoshimine Kato, and Teruaki Motooka, Luminescence from Nd- and Dy-ion-implanted 4H-SiC, Appl. Phys. Lett. 88, 191904 (2006), 2006.05.
60. M. Uenuma, Y.Ikoma, Y. Kato and T. Motooka, Design and Fabrication of Temperature-Independent Arrayed-Waveguide Grating Demultiplexers on SOI Substrates, Proc. of the 2005 IEEE Int. SOI Conf., 10.1109/SOI.2005.1563557, 114-115, pp.114-115, 2005.10.
61. Yoshimine Kato, For better viewing sense in LCD (liquid crystal displays): DLC film used as an alignment layer with an ion beam technology, Proc. of the 6th Int. Sympo. on Materials Science and Engineering between Kyushu Univ. and Chonbuk National Univ., pp.13-22, 2004.10.
62. Yoshimine KATO Yoshimasa KAIDA Yuki MIYOSHI Masakazu ATSUMI and James STATHIS, a-SiGe:H and a-SiGeC:H black-matrix for Liquid Crystal Displays, Jpn. J. Appl. Phys., Vol.43 No.1 pp.30-34, 2004.01.
63. Yukito SAITOH, Yoshiki NAKAGAWA, Hiroyuki SATOH and Yoshimine KATO, Optical Anisotropy of Polymer Film Exposed to Ion Beam and its Modeling, Proc. of the 23th Int. Display Research Conf., pp.196-198, 2003.09.
64. Y. KATO, H. KAMIYA, Novel Alignment layer: A Diamond-like Carbon Film without Alignment Process, Proc. of the 23th Int. Display Research Conf., pp.188-191, 2003.09.
65. Doyle JP Chaudhari P Lacey JL Galligan EA Lien SC Callegari AC Lang ND Lu M Nakagawa Y Nakano H Okazaki N Odahara S Katoh Y Saitoh Y Sakai K Satoh H Shiota Y, Ion beam alignment for liquid crystal display fabrication, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol.206 No. pp.467-471, 2003.05.
66. Y. KATO, Y. NAKAGAWA, Y. SAITOH, H. SATOH, S. ODAHARA, M. HASEGAWA, P. CHAUDHARI, J. DOYLE, S. LIEN, A. CALLEGARI, J. RITSUKO, M. SAMANT, and J. STOHR, Hydrogenated amorphous carbon film used as an alignment layer for liquid crystal displays, Proc. of the 22th International Display Research Conference, Euro Display '02, pp.525-529 , 2002.10.
67. Y. NAKAGAWA, Y. KATO, Y. SAITOH, K. SAKAI, H. SATOH, K. WAKO, S. ODAHARA, T. NAKAMURA, J. NAKAGAKI, H. NAKANO, P. CHAUDHARI, J. LACEY, J. DOYLE, E. GALLIGAN, S. LIEN, A. CALLEGARI, G. HOUGHAM, P. ANDRY, R. JOHN, M. LU, C. CAI, J. SPEIDELL, S. PURUSHOTHAMAN, J. RITSKO, M. SAMANT, and J. STOHR, Novel LC alignment method using diamond like carbon film and ion beam alignment, Proc. of the Society for Information display International Symposium, SID‘01, pp. 1346-1349, 2001.06.
68. P. CHAUDHARI J. LACEY J. DOYLE S. LIEN A. CALLEGARI M. SAMANT J. STOHR Y. NAKAGAWA Y. KATO Y. SAITOH K. SAKAI H. SATOH S. ODAHARA, Atomic-beam alignment of inorganic materials for liquid-crystal displays, Nature, Vol.411 No. pp.56-59, 2001.05.
69. Y. KATO, Initial Stage of ITO Plasma Etching using CH4 or C2H2 Gas, Proc. of the 19th Int. Display Research Conf. , Euro Display '99, pp.339-342, 1999.09.
70. Y. KATO, Y. KAIDA, Y. MIYOSHI, and M. ATSUMI, A-SiGe:H and a-SiGeC:H Used as Black-Matrix on Arrays for TFT-LCD’s, 39th Electronic Materials Conference, 1997.06.
71. Y. KATO and Y. HAYASHI, Investigation of vertical crosstalk for a TFT-LCD with an inorganic black matrix on the array, J. Soc. Info. Display, Vol.5 No.6 pp.387-392, 1997.05.
72. Y. KATO, Y. KAIDA, Y. MIYOSHI, M. ATSUMI, and H. SHIMIZU, TFT-LCDs with a-SiGeC:H Inorganic Black-Matrix on Arrays, Proc. of the 16th International Display Research Conference, Euro Display '96, pp. 533-536, 1996.10.
73. Y. KATO Y. MIYOSHI M. ATSUMI Y. KAIDA S. WRIGHT and L PALMATEER, Characteristics of a-Si Thin-film Transistors with an Inorganic Black Matrix on the Top, IEICE Transaction on Electronics, Vol.E79-C No.8 pp.1091-1096, 1996.08.
74. Y. KATO and Y. HAYASHI, Investigation of vertical crosstalk for an Inorganic Black Matrix on a TFT-LCD Array, Proc. of the Society for Information display International Symposium Digest of Technical Papers XXVII, pp.554-557, 1996.06.
75. Y. KATO, Y. KAIDA, Y. MIYOSHI, M. ATSUMI, S. WRIGHT, and L. PALMATEER, Characteristics of a-Si Thin-Film Transistors with an Inorganic Black Matrix on Array, Proc. of the 15th International Display Research Conference, Asia Display '95, pp.465-468, 1995.10.
76. Y. KATO, Y. KAIDA, Y. MIYOSHI, M. ATSUMI, S. WRIGHT, and L. PALMATEER, Back-Gate Effects of Amorphous-Si TFTs with an Inorganic Black Matrix on Array, Extended Abstracts of the 1995 International Conference on Solid State Devices and Material, 1995.08.
77. Y. KATO S. FUKATSU and Y. SHIRAKI, Postgrowth of a Si contact layer on an air-exposed Si1-xGex/Si single quantum well grown by gas-source molecular beam epitaxy for use in an electroluminescent device, J. Vac. Sci. Tech., Vol.B13 No.1 pp.111-117, 1995.05.
78. Y. KATO S.FUKATSU N. USAMI and Y. SHIRAKI, A Si1-xGex/Si single quantum well p-i-n structure grown by solid-source and gas-source "hybrid" molecular beam epitaxy, J. Crystal Growth, Vol.136 No. pp.355-360, 1994.12.
79. S. FUKATSU N. USAMI Y. KATO H. SUNAMURA Y. SHIRAKI H. OKU T. OHNISHI Y. OHMORI and K. OKUMURA, Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells, J. Crystal Growth, Vol.136 No. pp.315-321, 1994.12.
80. Y. KATO Y. TAKAHASHI S. FUKATSU Y. SHIRAKI and R. ITO, Observation of the Stark effect in GaAs/AlGaAs coupled quantum wells by electroluminescence and circularly polarized photoluminescence excitation, Materials Research Society Symposium Proceedings, Vol.326 No. pp.501-506, 1994.11.
81. Y. TAKAHASHI Y. KATO S. KANO S. FUKATSU Y. SHIRAKI and R. ITO, The effect of electric field on the excitonic states in coupled quantum well structures, J. Appl. Phys., Vol.76 No.4 pp.2299-2305, 1994.08.
82. Y. KATO Y. TAKAHASHI S. FUKATSU Y. SHIRAKI and R. ITO, Observation of the Stark effect in coupled quantum wells by electroluminescence and circularly polarized photoluminescence excitation spectroscopy, J. Appl. Phys., Vol.75 No. pp.7476-7481, 1994.06.
83. Y. KATO Y. TAKAHASHI S. FUKATSU Y. SHIRAKI and R. ITO, Quantum-confined Stark shift observed by electro-luminescence and circularpolarized luminescence excitation spectroscopy in GaAs/AlxGa1-xAs coupled quantum wells, J. Vac. Sci. Tech., Vol.B12 No.2 pp.1053-1055, 1994.04.
84. Y. KATO S. FUKATSU and Y. SHIRAKI, Solid- and Gas-Source "Hybrid" Si molecular beam epitaxy growth for a Si1-xGex/Si quantum well electroluminescent device', J. Electronic Materials, Vol.23 No.1 pp.47-51, 1994.01.
85. Y. KATO, Y. TAKAHASHI, S. FUKATSU, Y. SHIRAKI, and R. ITO, Observation of Stark effect in GaAs/AlxGa1-xAs coupled quantum wells by electroluminescence and circularly polarized photoluminescence excitation, Proc. of the Materials Research Society, 1993.11.
86. Y. KATO, Y. TAKAHASHI, S. FUKATSU, Y. SHIRAKI, and R. ITO, Quantum confined Stark shift observed by electro-luminescence and effect of circularpolarized luminescence excitation spectroscopy in GaAs/AlxGa1-xAs coupled quantum wells, Proc. of the North American Molecular-Beam Epitaxy conference, pp.1053-1055 , 1993.09.
87. S. FUKATSU, H. SUNAMURA, Y. KATO, N. USAMI, and Y. SHIRAKI, Growth Criteria for Establishing Luminescence in Strained Si1-xGex/Si Quantum Wells, Proc. of the International Conference on Solid State Device and Materials, pp. 386-388, 1993.08.
88. S. FUKATSU, N. USAMI, Y. KATO, H. SUNAMURA, Y. SHIRAKI, H. OKU, T. OHNISHI, Y. OHMORI, and K. OKUMURA, Gas-source MBE and luminescence characterization of strained Si1-xGex/Si quantum wells, Proc. of the 4th International conference on chemical beam epitaxy, 1993.07.
89. Y. KATO, S. FUKATSU, N. USAMI, and Y. SHIRAKI, Electroluminescence from a Si1-xGex/Si single quantum well grown by solid and gas source "hybrid" molecular beam epitaxy, Proc. of the 4th International conference on chemical beam epitaxy, 1993.07.
90. S. FUKATSU, H. SUNAMURA, N. USAMI, Y. KATO, and Y. SHIRAKI, Luminescence characterization of gas-source-grown Si1-xGex/Si quantum wells, Proc. of the Electronic Materials Conference, pp.315-321, 1993.06.
91. Y. KATO, S. FUKATSU, and Y. SHIRAKI, "Hybrid" Si molecular beam epitaxial growth for a strained Si1-xGex/Si quantum wells, Proc. of the Electronic Materials Conference, pp.355-360, 1993.06.
92. Y. KATO S.FUKATSU N. USAMI and Y. SHIRAKI, Hybrid Si molecular beam epitaxial regrowth for a strained Si1-xGex/Si single-quantum-well electroluminescent device, Appl. Phys. Lett., Vol.63(17), pp.2414-2416, 1993.01.
93. Anisotropic atomic structure of Tb-Fe and Tb-Co amorphous alloys
Hiroshi TANAKA Yoshimine KATO and Shinji TAKAYAMA
J. Non-Crys. Solids
Vol.150 (1992)pp.21-24..
94. H. TANAKA, Y. KATO, and S. TAKAYAMA, Anisotropic atomic structure of TbFe and TbCo amorphous alloys, Proc. of the 5th Int'l Conf. on the Structure of Non-Crystalline Materials (NCM5), p.4, 1991.07.
95. Y. KATO K.M. GEIB R.G. GANN P.R. BRUSENBACK and C.W. WILMSEN, Effects of annealing on anodic oxides of GaP, J. Vac. Sci. Technol., Vol.B9 No.3 pp.1530-1534, 1991.06.
96. Y. KATO S. TAKAYAMA E. MATSUBARA and Y. WASEDA, Atomic structure analysis of amorphous Tb-Fe1-xCox film systems, Jpn. J. Appl. Phys., Vol.30 No.4 pp.764-767, 1991.04.
97. TbFeCoCr magneto-optical media with high corrosion resistance
S. TAKAYAMA T. KAWANABE T. SHIMIZU Y. KATO and M. MIYAZAKI
J. Magnetism and Magnetic Materials
Vol.94 3(1991)pp.357-361..
98. E. MATSUBARA Y. WASEDA Y. KATO and S. TAKAYAMA, Structural study of amorphous Tb-Fe-Co films by X-ray diffraction, Materials Transactions JIM, Vol.31 No.8 pp.739-742, 1990.08.
99. Y. KATO and S. KURITA, Native oxides on etched Zn3P2 surfaces studied by x-ray photoelectron spectroscopy, Appl. Phys. Lett., Vol.52 No.25 pp.2133-2135, 1988.06.
100. Zn3P2 Thin Film Solar Cells grown by plazma assist physical vapour deposition
Yoshimine KATO Toshiro Watanabe Shoichi KURITA and Toshikazu SUDA
Denki gakkai ronbun-shi D
Vol.108 4(1988)pp.416-420..
101. Yoshimine KATO, Toshiro WATANABE, Shoichi KURITA, and Toshikazu SUDA, Zn3P2 Thin film solar cell Grown by Plasma Assisted Vapor Phase Deposition, Proc. of the 3rd International Photovoltaic Science and Engineering Conference, pp.683-686, 1987.11.
102. Yoshimine KATO Shoichi KURITA and Toshikazu SUDA, Photoenhanced chemical vapor deposition of zinc phosphide, J. Appl. Phys., Vol.62 No.9 pp.3733-3739, 1987.11.
103. Y. KATO K. M. GEIB R. G. GANN P. R. BRUSENBACK and C. W. WILMSEN, Thermal oxidation of GaP, J. Vacuum Science and Technology, Vol.A2 No.2 pp.588-592, 1984.06.
104. Y. KATO, K. M. GEIB, R. G. GANN, R. L. GILLENWATER, and C. W. WILMSEN, Thermal oxidation of GaP, Proc. of the American Vacuum Society 30th National Symposium, Vol.A2, No. 2, pp.588-592, 1983.11.