Tanemasa Asano | Last modified date:2023.11.22 |
Post-doctoral Fellow /
Center for Japan-Egypt Cooperation in Science and Technology(E-JUST Center)
Graduate School
Undergraduate School
Other Organization
Homepage
https://kyushu-u.elsevierpure.com/en/persons/tanemasa-asano
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Functional Electron Device Lab.-Prof. Asano-, Dept. Electronics, Kyushu University .
Academic Degree
Dr. of Engineering
Country of degree conferring institution (Overseas)
No
Field of Specialization
Electron Devices
Total Priod of education and research career in the foreign country
00years00months
Research
Research Interests
Membership in Academic Society
- In-situ measurement of electronic packaging process
keyword : strain sensor, strain gauge, in-situ measurement, microjoining, wire bonding, flip-chip packaging, 3D packaging
2006.04. - Development of video imaging device for terahertz waves
keyword : terahertz, THz, imaging, video, 3DIC
2014.10~2020.03. - Device and process technology of silicon carbide (SiC)
keyword : power semiconductor device, SiC, 4H-SiC, doping, laser processing, wet chemical laser processing
2012.04. - Device Technology for 3-Dimensional Integrated Circuits
keyword : Semiconductor, LSI, Three-dimensional Circutis, 3D-LSI, Microbumps, Image Sensor, NIR
2005.04. - Device Technology for Ingegrated Electronics
keyword : Semiconductor, LSI, SOI, TFT, 3D-LSI, Image Sensor, NIR, Terahertz, Power Device, SiC, Laser Doping
1979.04~2005.03.
- Electromagnetic waves of terahertz frequency possess properties of both radio wave and light. Implementation of video-imaging device which can produce images of terahertz waves will provide new information of matters and create innovative services in a variety of field such as security, disaster relief, medical operation, drug development, etc. For example, you will be able to find people even in clouds of smoke owing to its function. In this research project, terahertz video-imaging device is created by heterogeneous co-design and integration of nanometer sized transistor made of newly developed high-electron-mobility semiconductor and LSI composed of extremely low-noise circuit by using advanced room-temperature micro-interconnect technology.
- Institute of Electrical and Electronics Engineering
- Japan Institute of Electronics Packaging
- Japan Society of Applied Physics
- Institute of Electronics, Information and Communication Engineers of Japan
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