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Hiroshi Ikenoue Last modified date：2022.07.08

Professor / Department of Electrical Engineering
Faculty of Information Science and Electrical Engineering


Graduate School
Department of Electrical and Electronic Engineering
Graduate School of Information Science and Electrical Engineering
Undergraduate School
Department of Electrical Engineering and Computer Science
School of Engineering


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Homepage
https://kyushu-u.pure.elsevier.com/en/persons/hiroshi-ikenoue
　Reseacher Profiling Tool　Kyushu University Pure
Phone
092-802-3750
Academic Degree
Ph.D.
Country of degree conferring institution (Overseas)
No
Field of Specialization
Laser Processing, Electronic Devices, Solid State Physics for Engineering, Thin Film and Surface Physics, Integrated Circuit Engineering
Total Priod of education and research career in the foreign country
00years00months
Outline Activities
Gigaphoton Next GLP is the first Joint Research Department of Kyushu University, which was founded in Sep. 2011 by support of Gigaphoton Inc. for investigating next generation gas laser processing (Next GLP). Gigaphoton Inc. is the world’s leading company supplying the laser light source for lithography processes. Laser processing technologies have been widely utilized to various industrial applications such as electronic devices, automobile, medical care and new material synthesis. Our mission is to contribute to society through development of innovative laser processing technologies.
Our laboratory is supported by research activities from Okada-Nakamura Laboratory of Kyushu University.
Research
Research Interests
  • Next generation laser processing

    keyword : Laser processing, Laser anneal, Laser doping, Material synthesis, Laser micro-machining
    2011.09～2019.03.
Current and Past Project
  • Laser proseccing of graphene
  • Next generation gas laser processing
Academic Activities
Reports
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Papers
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1. Masakazu Hattori, Kazuaki Furukawa, Makoto Takamura, Hiroki Hibino, Hiroshi Ikenoue, Direct growth of patterned graphene on SiC(0001) surfaces by KrF excimer-laser irradiation, SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 10.1117/12.2078652, 9351, 2015.03.
2. Kota Yamasaki, Hiroshi Ikenoue, Tetsuya Shimogaki, Yosuke Watanabe, Daisuke Nakamura, Tatsuo Okada, High quality ZnO film formation by CO2 laser annealing of buried films in SiO2 matrix, LASER APPLICATIONS IN MICROELECTRONIC AND OPTOELECTRONIC MANUFACTURING (LAMOM) XIX, 10.1117/12.2038762, 8967, 2014.03.
3. Masashi Kurosawa, Noriyuki Taoka, Hiroshi Ikenoue, Osamu Nakazawa, Shigeaki Zaima, Large grain growth of Ge-rich Ge1-xSnx (x approximate to 0.02) on insulating surfaces using pulsed laser annealing in flowing water, APPLIED PHYSICS LETTERS, 10.1063/1.4864627, 104, 6, 2014.02.
4. Emi Machida, Masahiro Horita, Koji Yamasaki, Yasuaki Ishikawa, Yukiharu Uraoka, Hiroshi Ikenoue, Impact of Underwater Laser Annealing on Polycrystalline Silicon Thin-Film Transistor for Inactivation of Electrical Defects at Super Low Temperature, JOURNAL OF DISPLAY TECHNOLOGY, 10.1109/JDT.2012.2236883, 9, 9, 741-746, 2013.09.
5. Akihiro Ikeda, Koji Nishi, Hiroshi Ikenoue, Tanemasa Asano, Phosphorus doping of 4H SiC by liquid immersion excimer laser irradiation, APPLIED PHYSICS LETTERS, 10.1063/1.4790621, 102, 5, 2013.02.
6. Emi Machida, Masahiro Horita, Yasuyuki Ishikawa, Yukiharu Uraoka, Hiroshi Ikenoue, Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing, APPLIED PHYSICS LETTERS, 10.1063/1.4772513, 101, 25, 2012.12.
7. Emi Machida, Yukiharu Uraoka, Takashi Fuyuki, Ryohei Kokawa, Takeshi Ito, and Hiroshi Ikenoue, Characterization of local electrical properties of polycrystalline silicon thin films and hydrogen
termination effect by conductive atomic force microscopy
, Applied Physics Letters, 94, 182104, 2009.05, We observed local electrical properties of polycrystalline silicon films by conductive atomic force microscopy. Moreover, we investigated the effects of hydrogen termination on the polycrystalline silicon films. Before hydrogen termination, conductive regions in grain disappeared with the repeated scanning of the cantilever, while conductive regions in grain boundary almost unchanged. It is considered that hopping conduction is a major electrical conduction mechanism at grain boundaries. After 5 min hydrogen termination, locally nonterminated regions were observed near grain boundaries. This suggests that hydrogen termination of the polycrystalline silicon does not randomly progress, and there are regions that cannot be easily inactivated near grain boundaries..
8. Emi Machida, Yukiharu Uraoka, Takashi Fuyuki, Manato Deki, Mai Tani and Hiroshi Ikenoue, Characterization of Local Electrical Properties of Poly-Si Thin Films by Conductive Atomic Force Microscopy and Effect of Hydrogen Termination, Proceedings of The 5th Thin-Films Materials and Devices Meeting, 4-1 - 4-6, 2009.01, In this study, we analyzed local electrical defects in polycrystalline silicon (poly-Si)
thin films. We observed local electrical properties of poly-Si thin films by conductive atomic
force microscopy (C-AFM). Moreover, we observed local electrical properties poly-Si thin
films exposed to atomic hydrogen. Before the atomic hydrogen exposures, conductive regions
in grains disappeared with the repeated scanning of the cantilever, suggesting that the trapping
sites in grains were charged by the injection of holes from the cantilever. On the other hand,
conductive regions in grain boundaries remained while the increased number of scans.
Therefore, it is thought that current flowed continuously without the hole trapping at these
electrical defects in grain boundaries. After the atomic hydrogen exposures for 20 min,
electrical defects were inactivated, and the conduction mechanism of device became similar to
semiconductor conduction mechanism behavior..
9. H. IKEGAMI, H. IKEDA, S. ZAIMA, Y. YASUDA, Thermal stability of ultra-thin CoSi2 films on Si(100)-2×1 surfaces, Applied Surface Science, 117-118, 275, 1997.06, The thermal stability of epitaxial Co disilicide on Si(100) substrates has been investigated by coaxial impact-collision ion scattering spectroscopy (CAICISS), scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). After the Co deposition of 1 ML on Si(100)-2 × 1 clean surfaces and the subsequent annealing at 540°C for 10 min, CoSi2(110) islands are formed on Si(100) and the island surfaces are covered with Si layers with a thickness of about 0.4 nm. For the 3 ML Co deposition, atomically flat and pinhole-free epitaxial films on Si(100) are obtained, whose surfaces are not covered with additional Si layers. The CoSi2(110) islands and the CoSi2(100) films are dissolved into Si substrates by thermal annealing above 600°C..
10. H. IKEGAMI, K. OHMORI, H. IKEDA, H. IWANO, S. ZAIMA, Y. YASUDA, Oxide Formation on Si(100)-2×1 Surfaces Studied by Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy, Japanese Jarnal of Applied Physics, 35, 1593, 1996.02, The oxide formation on Si(100)-2×1 surfaces at room temperature has been studied by scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). The change in electronic structures due to oxidation has been discussed based on the spatially resolved STS spectra. It was found in the initial stage of oxidation that the local density-of-states (LDOS) of back bond states and dangling bond sites decreases dramatically at the oxidation-induced bright protrusions. The STS spectra of the 2×1 region with an oxygen exposure of 4.5 L suggest that oxygen atoms adsorb on the back bond sites. At the average SiO2 thickness of 0.4 nm, the surface states of Si(100)-2×1 vanish completely and the energy width of the gap near the Fermi level becomes very close to the band gap of bulk Si. In addition, the observed LDOS is spatially uniform in spite of the presence of bumps in the STM image. The STS spectra indicate the formation of the valence band and the conduction band of SiO2 at the oxide thickness of 0.4 nm..
11. H. IKEGAMI, K. MORITA, Characterization of an InP(001)-p(2×4) surface exposed to atomic deuterium at room temperature by means of LEED, AES, NRA and RBS-channeling techniques, Surface Science, 295, 213, 1993.09.
12. H. IKEGAMI, K. MORITA, Characterization of an InP(001)-p(2×4) surface exposed to atomic deuterium at room temperature by means of LEED, AES, NRA and RBS-channeling techniques, Surface Science Letters, 295, A695, 1993.06.
13. M. KATO, H. IKEGAMI, N. INOUE, T. HASEGAWA, M. KATAYAMA, M. AONO, A new experimental geometry of elastic recoil detection analysis (ERDA), Japanese Jurnal of Applied Physics, 10.1143/JJAP.32.162, 36, 162, 1993.01.
Presentations
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1. Masahiro Horita, Emi Machida, Yumi Kawamura, Hiroshi Ikenoue, Yukiharu Uraoka, Super Low Temperature Fabrication of Thin Film Transistors with Polycrystalline Si and Oxide Semiconductor Materials, International Meeting on Information Display, 2012.08.
2. Hiroshi Ikenoue, Chihiro Oguro, Haruya Shiba, Tatsuo Okada, A new in situ observation method of laser ablation by electric field measurement using a ring electrode probe, The 13th International Symposium on Laser Precision Microfabrication, 2012.07.
3. Emi Machida, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka, Hiroshi Ikenoue, Crystallization of Polycrystalline Silicon Films by Underwater Laser Annealing and Its Application to Thin Film Transistors, INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES, 2012.07.
Membership in Academic Society
  • THE JAPAN SOCIETY OF APPLIED PHYSICS
  • THE LASER SOCIETY OF JAPAN
  • IEEE
Awards
  • Excellent paper about silicon nano-technology was published as follows.
    ’Large grain growth of tensile-strained Ge-rich GeSn on insulator by pulsed laser annealing in flowing water’
    Masashi Kurosawa, Noriyuki Taoka, Hiroshi Ikenoue, Osamu Nakatsuka, and Shigeaki Zaima, Appl. Phys. Lett. 104, 061901 (4pp) (Feb. 2014).
  • Best Paper Award of The 19th International Display Workshops in conjunction with Asia Display.
    'Super Low-Temperature Formation of Polycrystalline Silicon Films on Plastic Substrates by Underwater Laser
    Annealing'
    E. MACHIDA, M. HORITA, Koji, Y. ISHIKAWA, Y. URAOKA, H. IKENOUE
    The 19th International Display Workshops in conjunction with Asia Display (2012-12).
  • Poster Award of The 19th International Workshop on Active-Matrix Flatpanel Displays and Devices
    'Crystallization to Polycrystalline Silicon Films by Underwater Laser Annealing and ItsApplication to Thin Film
    Transistors'
    E. MACHIDA, M. HORITA, Koji, Y. ISHIKAWA, Y. URAOKA, H. IKENOUE
    The 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (2012-07).


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