Publisher：2024 IEEE Photonics Conference IPC 2024 Proceedings  

We demonstrate the transmission of waveguide modulators at rates exceeding 100 Gbaud using materials with a strong Pockels effect. The modulators achieve BER below FEC threshold, require a driving voltage of less than one volt, and can operate reliably under severe environmental conditions. We discuss electro-optic polymer waveguide modulars for such applications.

DOI： 10.1109/IPC60965.2024.10799758

Web of Science

Scopus

DOI： 10.1364/OFC.2023.Tu3C.2

Web of Science

Publisher：2023 IEEE Photonics Conference, IPC 2023 - Proceedings  

We demonstrate a high-speed MZI modulator that is based on a high electro-optic ferroelectric waveguide phase shifter on insulator. The device achieved 152 Gbits/ OOK and 252 Gbit/s PAM4 data transmission.

DOI： 10.1109/IPC57732.2023.10360588

Web of Science

Scopus

Publisher：IEEE International Conference on Group IV Photonics Gfp  

We demonstrate >100Gbaud transmission of waveguide modulators using strong Pockels effect materials. The modulators have BER below FEC threshold, driving voltage of sub-one volt, and possible reliable operation under severe environmental conditions. We discuss electro-optic polymer and spin-on ferroelectric waveguide modulars for such applications.

DOI： 10.1109/SIPHOTONICS55903.2023.10141934

Web of Science

Scopus

DOI： 10.1364/OFC.2023.Tu3C.4

Web of Science

Language：English   Publishing type：Research paper (scientific journal)   Publisher：APL Photonics  

Integrated lithium niobate (LN) electro-optic (EO) modulators are emerging for applications in next-generation optical fiber communication networks. To date, LN crystal waveguides have led the technology for high-speed modulators. On the other hand, on-chip LN modulators are expected to realize scalable signaling devices with mature complementary metal-oxide-semiconductor technology. In this study, a silicon-loaded LN modulator on the insulator substrate featuring a small footprint, a low driving voltage, and high-speed EO modulation is designed and fabricated. No etching or patterning of the LN is required. The measured halfwave-voltage length product is 1.9 V cm with a static modulation extinction ratio of 17.9 dB. The fabricated LN modulator has a modulation bandwidth of 60 GHz and supports high-speed signaling at a data rate up to 200 Gbit/s.

DOI： 10.1063/5.0109251

Web of Science

Scopus

Language：English   Publishing type：Research paper (scientific journal)   Publisher：Optics Express  

We present a silicon slot microring resonator for efficient frequency conversion via four-wave mixing (FWM). The slot consists of a narrow silicon waveguide pair with a gap of 80 nm, which is filled with a nonlinear optical polymer. The group velocity dispersion for the microring is controlled by engineering the geometry of the slot structure. Because of the large buildup factor of the slot microring, an FWM conversion efficiency of −27.4 dB is achieved with an optical pump power of less than 1.0 mW. From the measured power dependence of FWM generation, a nonlinear refractive index coefficient of 1.31 × 10⁻¹⁷ m² W⁻¹ is obtained at a wavelength of 1562 nm. This work presents a hybrid silicon slot and polymer microring as a potential nonlinear device for applications in integrated photonic devices.

DOI： 10.1364/OE.475748

Web of Science

Scopus

PubMed

Language：English   Publishing type：Research paper (scientific journal)   Publisher：Optics Express  

Efficient electro-optic (EO) modulation can be generated in the hybrid silicon modulator with EO polymer in the form of an in-plane coplanar waveguide and electrode structure. Strong confinement of the optical field in the hybrid structure is critical to performing efficient electric poling and modulation of the EO polymer. The waveguide consists of silica-based side claddings and an EO core for increasing the integral of the optical field and the overlap interaction between the optical field and the modulated electric field within the EO polymer. We discuss in detail the volume resistivity dependence of the efficiency of electric poling and modulation for various side-cladding materials. In a Mach-Zehnder interferometer modulator, the measured half-wave-voltage length product (V<inf>π</inf>L) is 1.9 V·cm at an optical communication wavelength of 1,550 nm under the TE optical mode operation. The high-speed signaling of the device is demonstrated by generating on-off-keying transmission at signal rates up to 52 Gbit/s with a Q factor of 6.1 at a drive voltage of 2.0 V<inf>pp</inf>

DOI： 10.1364/OE.447616

Web of Science

Scopus

PubMed

Publisher：OECC/PSC 2022 - 27th OptoElectronics and Communications Conference/International Conference on Photonics in Switching and Computing 2022  

We demonstrate the synthetic EO chromophores that show high thermal and optical potential for utilizing in the next-generation O-band communication. The elevated EO modulators also exhibit the excellent V π of 2.8 V and 2.4 V.

DOI： 10.23919/OECC/PSC53152.2022.9850013

Scopus

Web of Science

Language：English   Publishing type：Research paper (scientific journal)  

DOI： 10.1109/LPT.2021.3126945

Language：English   Publishing type：Research paper (scientific journal)  

DOI： 10.1364/OE.25.000768

Language：Japanese   Publishing type：Research paper (scientific journal)  

DOI： 10.1063/1.4931490