Kyushu University Academic Staff Educational and Research Activities Database
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Akira KUSABA Last modified date:2021.04.21

Graduate School
総合理工学府 総合理工学専攻 I類
Other Organization

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Academic Degree
Dr. Engineering
Field of Specialization
Crystal growth
Research Interests
  • Feature extraction in semiconductor epitaxy
    keyword : Impurity concentration, Step dynamics, Spatio‐temporal analysis, Data-driven modeling, Machine learning
  • Multi-physics modeling of semiconductor epitaxy
    keyword : Surface reconstruction, Driving force of epitaxy, Impurity incorporation, First-principles calculation, Thermodynamic analysis
Academic Activities
1. Akira Kusaba, Kilho Shin, Dave Shepard, Tetsuji Kuboyama, Predictive Nonlinear Modeling by Koopman Mode Decomposition, Proceedings of the International Conference on Data Mining Workshops 2020 (ICDMW 2020), 10.1109/ICDMW51313.2020.00118, 811-819, 2020.11.
2. Akira Kusaba, Guanchen Li, Pawel Kempisty, Michael R. von Spakovsky, Yoshihiro Kangawa, CH4 Adsorption Probability on GaN(0001) and (000-1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Carbon Contamination in the Films, Materials, 10.3390/ma12060972, 12, 6, 972:1-972:14, 2019.03.
3. Akira Kusaba, Guanchen Li, Michael R. von Spakovsky, Yoshihiro Kangawa, Koichi Kakimoto, Modeling the Non-Equilibrium Process of the Chemical Adsorption of Ammonia on GaN(0001) Reconstructed Surfaces Based on Steepest-Entropy-Ascent Quantum Thermodynamics, Materials, 10.3390/ma10080948, 10, 8, 948:1-948:13, 2017.08.
4. Akira Kusaba, Yoshihiro Kangawa, Pawel Kempisty, Hubert Valencia, Kenji Shiraishi, Yoshinao Kumagai, Koichi Kakimoto, Akinori Koukitu, Thermodynamic analysis of (0001) and (000-1) GaN metalorganic vapor phase epitaxy, Japanese Journal of Applied Physics, 10.7567/JJAP.56.070304, 56, 7, 070304:1-070304:4, 2017.06.
5. Akira Kusaba, Yoshihiro Kangawa, Pawel Kempisty, Kenji Shiraishi, Koichi Kakimoto, Akinori Koukitu, Advances in modeling semiconductor epitaxy: Contributions of growth orientation and surface reconstruction to InN metalorganic vapor phase epitaxy, Applied Physics Express, 10.7567/APEX.9.125601, 9, 12, 125601:1-125601:4, 2016.11.
1. Akira Kusaba, Yoshihiro Kangawa, Pawel Kempisty, Kenji Shiraishi, Koichi Kakimoto, Akinori Koukitu, Thermodynamic Modeling of GaN MOVPE: Contribution of Surface State, International Conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017), 2017.09.
2. Akira Kusaba, Yoshihiro Kangawa, Yoshio Honda, Hiroshi Amano, Koichi Kakimoto, Ab initio-based approach to surface reconstruction on InN(0001) during induced-pressure MOVPE, 6th International Symposium on Growth of III-Nitrides (ISGN-6), 2015.11.
3. Akira Kusaba, Yoshihiro Kangawa, Stanislaw Krukowski, Koishi Kakimoto, Relationship between stability of facet surfaces and incorporation of zinc-blende phase in InN during pressurized reactor MOVPE: A theoretical approach, 5th European Conference on Crystal Growth (ECCG-5), 2015.09.
  • Outstanding Presentation Award (ICMaSS 2017)
  • Young Scientist Award (ISGN-6)
  • Poster Prize of Italian Association of Crystallography (ECCG-5)