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Akira KUSABA Last modified date：2022.12.27

Assistant Professor / Division of Renewable Energy Dynamics
Research Institute for Applied Mechanics


Graduate School
総合理工学府 総合理工学専攻 I類（物質科学）
Other Organization
Other


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Homepage
https://kyushu-u.pure.elsevier.com/en/persons/akira-kusaba
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https://sites.google.com/view/akira-kusaba
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https://sites.google.com/view/kangawalab
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https://researchmap.jp/akusaba?lang=en
researchmap .
Academic Degree
Dr. Engineering
Field of Specialization
Crystal growth
Research
Research Interests
  • Feature extraction in semiconductor epitaxy
    keyword : Impurity concentration, Step dynamics, Spatio‐temporal analysis, Data-driven modeling, Machine learning
    2019.04.
  • Multi-physics modeling of semiconductor epitaxy
    keyword : Surface reconstruction, Driving force of epitaxy, Impurity incorporation, First-principles calculation, Thermodynamic analysis
    2016.04.
Academic Activities
Reports
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Papers
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1. Akira Kusaba, Shugo Nitta, Kenji Shiraishi, Tetsuji Kuboyama, Yoshihiro Kangawa, Beyond ab initio reaction simulator: An application to GaN metalorganic vapor phase epitaxy, Applied Physics Letters, 10.1063/5.0119783, 121, 162101:1-162101:6, 2022.10.
2. Akira Kusaba, Yoshihiro Kangawa, Tetsuji Kuboyama, Atsushi Oshiyama, Exploration of a large-scale reconstructed structure on GaN(0001) surface by Bayesian optimization, Applied Physics Letters, 10.1063/5.0078660, 120, 021602:1-021602:5, 2022.01.
3. Akira Kusaba, Guanchen Li, Pawel Kempisty, Michael R. von Spakovsky, Yoshihiro Kangawa, CH4 Adsorption Probability on GaN(0001) and (000-1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Carbon Contamination in the Films, Materials, 10.3390/ma12060972, 12, 6, 972:1-972:14, 2019.03.
4. Akira Kusaba, Yoshihiro Kangawa, Pawel Kempisty, Kenji Shiraishi, Koichi Kakimoto, Akinori Koukitu, Advances in modeling semiconductor epitaxy: Contributions of growth orientation and surface reconstruction to InN metalorganic vapor phase epitaxy, Applied Physics Express, 10.7567/APEX.9.125601, 9, 12, 125601:1-125601:4, 2016.11.
Presentations
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1. Akira Kusaba, Zheng Ye, Shugo Nitta, Kenji Shiraishi, Tetsuji Kuboyama, Yoshihiro Kangawa, Tuning of Ab Initio Reaction Rate in GaN Metalorganic Vapor Phase Epitaxy by Multiobjective Genetic Algorithm with High-Resolution Mass Spectrometry Data, International Workshop on Nitride Semiconductors 2022 (IWN 2022), 2022.10.
2. Akira Kusaba, Application of Machine Learning Methods to More Quantitative GaN MOVPE Modeling, 2nd International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation (ISWGPDs 2022), 2022.01.
3. Akira Kusaba, Yoshihiro Kangawa, Zheng Ye, Shugo Nitta, Kenji Shiraishi, Tuning of Reaction Rate Constants for Trimethylgallium Decomposition by Multiobjective Genetic Algorithm with High-Resolution Mass Spectrometry Data, International Conference on Materials and Systems for Sustainability 2021 (ICMaSS 2021), 2021.11.
4. Akira Kusaba, Yoshihiro Kangawa, More quantitative prediction of III-nitride growth: theoretical and data-driven approaches, International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021 (ISWGPDs 2021), 2021.01.
5. Yuya Inatomi, Akira Kusaba, Yoshihiro Kangawa, Kazunobu Kojima, Shigefusa Chichibu, Formation Mechanism of Singular Structure in AlInN Layer Grown on M-GaN Substrate by MOVPE, 6th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA '18), 2018.04.
6. Akira Kusaba, Yoshihiro Kangawa, Pawel Kempisty, Kenji Shiraishi, Koichi Kakimoto, Akinori Koukitu, Thermodynamic Modeling of GaN MOVPE: Contribution of Surface State, International Conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017), 2017.09.
7. Akira Kusaba, Yoshihiro Kangawa, Yoshio Honda, Hiroshi Amano, Koichi Kakimoto, Ab initio-based approach to surface reconstruction on InN(0001) during induced-pressure MOVPE, 6th International Symposium on Growth of III-Nitrides (ISGN-6), 2015.11.
8. Akira Kusaba, Yoshihiro Kangawa, Stanislaw Krukowski, Koishi Kakimoto, Relationship between stability of facet surfaces and incorporation of zinc-blende phase in InN during pressurized reactor MOVPE: A theoretical approach, 5th European Conference on Crystal Growth (ECCG-5), 2015.09.
Awards
  • Outstanding Presentation Award (ICMaSS 2017)
  • Young Scientist Award (ISGN-6)
  • Poster Prize of Italian Association of Crystallography (ECCG-5)


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