Kyushu University Academic Staff Educational and Research Activities Database
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Kino Hisashi Last modified date:2024.06.03



Graduate School
Undergraduate School
Other Organization
Other


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Homepage
https://kyushu-u.elsevierpure.com/en/persons/hisashi-kino
 Reseacher Profiling Tool Kyushu University Pure
https://si.ed.kyushu-u.ac.jp/
Academic Degree
Ph.D.
Country of degree conferring institution (Overseas)
No
Field of Specialization
Semiconductor devices, Integration technology
Research
Research Interests
  • Highly sensitive FET biosensor
    keyword : FET biosensor
    2023.10.
  • Semiconductor Memory with Tunnel FET
    keyword : Tunnel FET, Semiconductor memory
    2023.10.
  • Improving IC (Integrated Circuit) Performances by Controlling Stress Using Negative Thermal Expansion
    keyword : Negative thermal expansion, Stress control
    2023.10.
  • Three dimensional integrated circuits
    keyword : 3D IC
    2023.10.
Academic Activities
Books
1. 熱膨張制御材料の開発と応用.
Papers
1. H. Kino, T. Fukushima, T. Tanaka, Generation of STDP With Non-Volatile Tunnel-FET Memory for Large-Scale and Low-Power Spiking Neural Networks, IEEE Journal of the Electron Devices Society, 10.1109/JEDS.2020.3025336, 8, 1266-1271, 2020.09.
2. Hisashi Kino, Takafumi Fukushima, Tetsu Tanaka, Enhancement of carrier mobility in metal-oxide semiconductor field-effect transistors using negative thermal expansiongate electrodes, Applied Physics Express, 10.35848/1882-0786/ac9d24, 15, 11, 111004-1-111004-5, 2022.04, Strained-Si technology is crucial to improving the performance of metal-oxide-semiconductor field-effect transistors (MOSFETs). To introduce large strain into the channel, we proposed a structure for the negative thermal expansion gate electrode. In this study, we used manganese nitride as the gate material, which is a negative thermal expansion material. The fabricated MOSFETs with the manganese nitride gate showed a 10% increase in electron mobility compared to the MOSFET with the Al gate. The results show that the negative thermal expansion gate technology is promising as a technology booster for MOSFET scaling..
Membership in Academic Society
  • IEEE
  • The Japan Society of Applied Physics
  • The Electrochemical Society of Japan