| 1. |
後藤崇之, 井手健介, 内海淳, 田原諭, 津野武志, 木ノ内雅人, 鈴木毅典, MEMSデバイスの高効率・低コスト生産に貢献するウェーハ常温接合装置, 三菱重工技報(Web), Vol.43, No.1, p.51-52 (WEB ONLY), 2006.01. |
| 2. |
井手健介, 後藤崇之, 浅野伸, 内海淳, 田原諭, 津村陽一郎, 次世代マイクロデバイスの量産に貢献する常温ウェーハ接合装置, 三菱重工技報(Web), Vol.44, No.1, pp.32-34 (WEB ONLY)-34, 2007.01. |
| 3. |
井手健介, 後藤崇之, 内海淳, 鈴木毅典, 多岐にわたるデバイス分野で活躍する常温ウェーハ接合装置, 三菱重工技報(Web), Vol.48, No.1, pp.51-55 (WEB ONLY)-55, 2011.01. |
| 4. |
内海 淳, 井手 健介, 一柳 優子, 表面活性化法を用いた常温ウェハ接合技術, 表面科学, 10.1380/jsssj.38.72, Vol.38, No.2, pp.72-76, 2017.02, The bonding of metal electrode and insulator hybrid interfaces is one of key techniques in 3D integration technology. As the surface activated bonding (SAB) is carried out at room temperature, the method is expected to be suitable for hybrid bonding. The metal materials such as Cu or Al are easy to directly bond using the SAB method, but insulator materials such as SiO2 or SiN are difficult. In this report, we propose a new bonding technique for SiO2/SiO2 bonding at room temperature using only Si ultra-thin films. We confirmed that the surface energy was about 1 J/m2, which is almost the same value of Si/Si bonding prepared at room temperature by SAB. Moreover, we examined the bonding of Cu/Cu by the SAB method, and we confirmed that no micro-voids were observed at the bonding interface.. |
| 5. |
内海淳, ハイブリッド接合のための常温によるウェハ接合技術 (特集 半導体の配線微細化/高密度化に向けた表面処理技術動向), 機能材料, 2018.06. |
