Nonlinear terahertz field-induced carrier dynamics in photoexcited epitaxial monolayer graphene Reviewed International journal

H. A. Hafez, I. Al-Naib, M. M. Dignam, Y. Sekine, K. Oguri, F. Blanchard, D. G. Cooke, Tanaka Satoru, F. Komori, H. Hibino, T. Ozaki

Phys. Rev. B   91   035422   2015.10

Highly Anisotropic Parallel Conduction in the Stepped Substrate of Epitaxial Graphene Grown on Vicinal SiC Reviewed International journal

A. Endo, F. Komori, K. Morita, T. Kajiwara, Tanaka Satoru

J. Low Temp. Phys.   179   237   2015.9

Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces Reviewed International journal

S. W. King, Tanaka Satoru, R. F. Davis, R. J. Nemanich

J. Vac. Sci. Tech. A   33 ( 5 )   05E105   2015.7

Scanning tunneling microscopic and spectroscopic studies on a crystalline silica monolayer epitaxially formed on hexagonal SiC(000-1) surfaces Reviewed International journal

H. Tochihara, T. Shirasawa, T. Suzuki, T. Miyamachi, T. Kajiwara, K. Yagyu, S. Yoshizawa, T. Takahashi, Tanaka Satoru, F. Komori

Appl. Phys. Lett.   104   051601   2015.4

Graphene nanoribbons grown on epitaxial SixCyOz layer on vicinal SiC(0001) surfaces by chemical vapor deposition Reviewed International journal

Hagihara Yoshihito, Tanaka Satoru

Appl. Phys. Express   6   055102   2013.4

Graphene nanoribbons on vicinal SiC surfaces by molecular beam epitaxy Reviewed International journal

Kajiwara Kakashi, Tanaka Satoru

Physical Review B 87, 121407 (2013).   87   121407   2013.3

A Raman imaging study of growth process of few-layer epitaxial graphene on vicinal 6H–SiC Reviewed International journal

( 25 )   2012.3

SiC表面上のエピタキシャルグラフェンの成長 Invited Reviewed

田中　悟，森田　康平，日比野　浩樹

表面科学   32 ( 6 )   2011.8

SiCナノ表面上のエピタキシャルグラフェン形成 Invited Reviewed

田中　悟

日本結晶成長学会誌   37 ( 3 )   2010.10

LEED analysis of graphite films on vicinal 6H-SiC(0001) surface Reviewed International journal

K. Hayashi, S. Mizuno, S. Tanaka

Journal of Novel Carbon Resource Sciences   2 ( 0001 )   2010.8

Shape, width, and replicas of π bands of single-layer graphene grown on Si-terminated vicinal SiC(0001) Reviewed International journal

82 ( 4 )   2010.7

Few-layer epitaxial graphene grown on vicinal 6H–SiC studied by deep ultraviolet Raman spectroscopy Reviewed International journal

97 ( 3 )   2010.5

Anisotropic transport in graphene on SiC substrate with periodic nanofacets Reviewed International journal

S. Odaka, H. Miyazaki, S.-L. Li, A. Kanda, K. Morita, S. Tanaka, Y. Miyata, H. Kataura, K. Tsukagoshi, Y. Aoyagi

Appl. Phys. Lett.   96   2010.1

Anisotropic layer-by-layer growth of graphene on vicinal SiC(0001) surfaces Reviewed International journal

S. Tanaka, K. Morita, H. Hibino

Phys. Rev. B, Rapid Communication   81   2010.1

Atomic-layer-resolved bandgap structure of an ultrathin oxynitride-silicon film epitaxially grown on 6H-SiC(0001) Reviewed International journal

T. Shirasawa, K. Hayashi, H. Yoshida, S. Mizuno, S. Tanaka, T. Muro, Y. Tamenori, Y. Harada, T. Tokushima, Y. Horikawa, E. Kobayashi, T. Kinoshita, S. Shin, T. Takahashi, Y. Ando, K. Akagi, S. Tsuneyuki, H. Tochihara

Phys. Rev. B   79 ( 24 )   2009.6

Stable surface termination on vicinal 6H-SiC(0001) surfaces Reviewed International journal

K. Hayashi, K. Morita, S. Mizuno, H. Tochihara, S. Tanaka

Surf. Sci.   603   2009.5

Electron Beam Irradiation Effect for Solid C60 Epitaxy on Graphene Reviewed International journal

A. Hashimoto, H. Terasaki, A. Yamamoto, S. Tanaka

Diamond and Related Materials   18   2009.4

van der Waals epitaxy of solid C 60 on graphene sheet Reviewed International journal

A. Hashimoto, K. Iwao, S. Tananka, A. Yamamoto

Diamond and Related Materials   17   2008.4

Ordering distance of surface nanofacets on vicinal 4H-SiC(0001) Reviewed International journal

M. Fujii, S. Tanaka

Phys. Rev. Lett.   2007.7

Nucleation and growth mode of GaN on vicinal SiC surfaces Reviewed International journal

M. Ebihara, S. Tanaka, I. Suemune

Jpn. J. Appl. Phys.   2007.4

Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface Reviewed International journal

T. Shirasawa ,K. Hayashi, S. Mizuno, S. Tanaka, K. Nakatsuji, F. Komori, H. Tochihara

Phys. Rev. Lett.   2007.2

Laser-induced microexplosion confined in the bulk of a sapphire crystal: Evidence of multimegabar pressures Reviewed International journal

S. Juodkazis, K. Nishimura, S. Tanaka, H. Misawa, E. G. Gamaly, B. Luther-Davies, L. Hallo, P. Nicolai, V. T. Tikhonchuk

Phys. Rev. Lett.   2006.11

Self-ordering of nanofacets on vicinal SiC surfaces Reviewed International journal

H. Nakagawa, S. Tanaka, I. Suemune

Phys. Rev. Lett.   2003.11

Width-dependent band gap of arm-chair graphene nanoribbons formed on vicinal SiC substrates by MBE

Takushi Iimori, Toshio Miyamachi, Takashi Kajiwara, Kazuhiko Mase, Satoru Tanaka, Fumio Komori, Kan Nakatsuji

Journal of Physics: Condensed Matter   35 ( 45 )   455002 - 455002   2023.8   （ ISSN:0953-8984 eISSN:1361-648X ）

Width-dependent band gap of arm-chair graphene nanoribbons formed on vicinal SiC substrates by MBE Reviewed International journal

Takushi Iimori1, Toshio Miyamachi, @Takashi Kajiwara, Kazuhiko Mase, @Satoru Tanaka, Fumio Komori and Kan Nakatsuji

J. Phys.: Condens. Matter   35   455002 - 455   2023.5

Environmental effects on layer-dependent dynamics of Dirac fermions in quasicrystalline bilayer graphene Reviewed International journal

Y. Zhao, T. Suzuki , T. Iimori, H.-W. Kim , J. R. Ahn, M. Horio, Y. Sato, Y. Fukaya , T. Kanai , K. Okazaki, S. Shin , S. Tanaka , F. Komori , H. Fukidome, I. Matsuda

PHYSICAL REVIEW B   105 ( 11 )   115304-1 - 115304-8   2022.3   （ ISSN:2469-9950 eISSN:2469-9969 ）

Data-driven sensitivity analysis in surface structure determination using total-reflection high-energy positron diffraction (TRHEPD)

Takeo Hoshi, Daishiro Sakata, Shotaro Oie, Izumi Mochizuki, Satoru Tanaka, Toshio Hyodo, Koji Hukushima

COMPUTER PHYSICS COMMUNICATIONS   271   2022.2   （ ISSN:0010-4655 eISSN:1879-2944 ）

Electronic structure of 3 degrees-twisted bilayer graphene on 4H-SiC(0001)

Takushi Iimori, Anton Visikovskiy, Hitoshi Imamura, Toshio Miyamachi, Miho Kitamura, Koji Horiba, Hiroshi Kumigashira, Kazuhiko Mase, Kan Nakatsuji, Satoru Tanaka, Fumio Komori

PHYSICAL REVIEW MATERIALS   5 ( 5 )   2021.5

Twisted bilayer graphene fabricated by direct bonding in a high vacuum

Hitoshi Imamura, Anton Visikovskiy, Ryosuke Uotani, Takashi Kajiwara, Hiroshi Ando, Takushi Iimori, Kota Iwata, Toshio Miyamachi, Kan Nakatsuji, Kazuhiko Mase, Tetsuroh Shirasawa, Fumio Komori, Satoru Tanaka

APPLIED PHYSICS EXPRESS   13 ( 7 )   2020.7

Ultrafast unbalanced electron distributions in quasicrystalline 30° twisted bilayer graphene Reviewed

13 ( 10 )   11981 - 11987   2019.10

Ultrafast Unbalanced Electron Distributions in Quasicrystalline 30 degrees Twisted Bilayer Graphene Reviewed

Takeshi Suzuki, Takushi Iimori, Sung Joon Ahn, Yuhao Zhao, Mari Watanabe, Jiadi Xu, Masami Fujisawa, Teruto Kanai, Nobuhisa Ishii, Jiro Itatani, Kento Suwa, Hirokazu Fukidome, Satoru Tanaka, Joung Real Ahn, Kozo Okazaki, Shik Shin, Fumio Komori, Iwao Matsuda

ACS NANO   13 ( 10 )   11981 - 11987   2019.10

Structure determination of hydrogen-terminated 4H -SiC(0001) by LEED Reviewed

Hiroshi Ando, Anton Visikovskiy, Takeshi Nakagawa, Seigi Mizuno, Satoru Tanaka

Physical Review B   99 ( 23 )   2019.6

Structure determination of hydrogen-terminated 4H-SiC(0001) by LEED

Hiroshi Ando, Anton Visikovskiy, Takeshi Nakagawa, Seigi Mizuno, Satoru Tanaka

PHYSICAL REVIEW B   99 ( 23 )   2019.6

Coexistence of Two Types of Spin Splitting Originating from Different Symmetries Reviewed

Koichiro Yaji, Anton Visikovskiy, Takushi Iimori, Kenta Kuroda, Singo Hayashi, Takashi Kajiwara, Tanaka Satoru, Fumio Komori, Shik Shin

Physical Review Letters   122 ( 12 )   2019.3

Coexistence of Two Types of Spin Splitting Originating from Different Symmetries

Koichiro Yaji, Anton Visikovskiy, Takushi Iimori, Kenta Kuroda, Singo Hayashi, Takashi Kajiwara, Satoru Tanaka, Fumio Komori, Shik Shin

PHYSICAL REVIEW LETTERS   122 ( 12 )   2019.3

Vacancy and curvature effects on the phonon properties of single wall carbon nanotube Reviewed

Ashraful Hossain Howlader, Md Sherajul Islam, Tanaka Satoru, Takayuki Makino, Akihiro Hashimoto

Japanese Journal of Applied Physics   57 ( 2 )   2018.2

Vacancy and curvature effects on the phonon properties of single wall carbon nanotube Reviewed

Ashraful Hossain Howlader, Md Sherajul Islam, Tanaka Satoru, Takayuki Makino, Akihiro Hashimoto

Japanese Journal of Applied Physics   57 ( 2 )   2018.2

Effect of ¹⁰B isotope and vacancy defects on the phonon modes of two-dimensional hexagonal boron nitride Reviewed

Md Sherajul Islam, Khalid N. Anindya, Ashraful G. Bhuiyan, Tanaka Satoru, Takayuki Makino, Akihiro Hashimoto

Japanese Journal of Applied Physics   57 ( 2 )   2018.2

Triangular lattice atomic layer of Sn(1 × 1) at graphene/SiC(0001) interface Reviewed

11 ( 1 )   2018.1

Vacancy and curvature effects on the phonon properties of single wall carbon nanotube Reviewed

Ashraful Hossain Howlader, Md. Sherajul Islam, Satoru Tanaka, Takayuki Makino, Akihiro Hashimoto

Jpn. J. Appl. Phys.   57 ( 2S2 )   02CB08 - (4)   2018.1

Triangular lattice atomic layer of Sn(1 x 1) at graphene/SiC(0001) interface

Shingo Hayashi, Anton Visikovskiy, Takashi Kajiwara, Takushi Iimori, Tetsuroh Shirasawa, Kan Nakastuji, Toshio Miyamachi, Shuhei Nakashima, Koichiro Yaji, Kazuhiko Mase, Fumio Komori, Satoru Tanaka

APPLIED PHYSICS EXPRESS   11 ( 1 )   2018.1

Effect of 10B isotope and vacancy defects on the phonon modes of two-dimensional hexagonal boron nitride Reviewed International journal

Md. Sherajul Islam, Khalid N. Anindya, Ashraful G. Bhuiyan, Satoru Tanaka, Takayuki Makino, Akihiro Hashimoto

Japanese Journal of Applied Physics   57   02CB04   2017.12

Modulation of Electron-Phonon Coupling in One-Dimensionally Nanorippled Graphene on a Macrofacet of 6H-SiC Reviewed International journal

Koichiro Ienaga, Takushi Iimori, Koichiro Yaji, Toshio Miyamachi, Shuhei Nakashima, Yukio Takahashi, Kohei Fukuma, Shingo Hayashi, Takashi Kajiwara, Anton Visikovskiy, Kazuhiko Mase, Kan Nakatsuji, Tanaka Satoru, Fumio Komori

Nano Letters   17 ( 6 )   3527 - 3532   2017.6

Modulation of Electron-Phonon Coupling in One-Dimensionally Nanorippled Graphene on a Macrofacet of 6H-SiC

Koichiro Ienaga, Takushi Iimori, Koichiro Yaji, Toshio Miyamachi, Shuhei Nakashima, Yukio Takahashi, Kohei Fukuma, Shingo Hayashi, Takashi Kajiwara, Anton Visikovskiy, Kazuhiko Mase, Kan Nakatsuji, Satoru Tanaka, Fumio Komori

NANO LETTERS   17 ( 6 )   3527 - 3532   2017.6

Modulation of Electron-Phonon Coupling in One-Dimensionally Nanorippled Graphene on a Macrofacet of 6H-SiC Reviewed

Koichiro Ienaga, Takushi Iimori, Koichiro Yaji, Toshio Miyamachi, Shuhei Nakashima, Yukio Takahashi, Kohei Fukuma, Shingo Hayashi, Takashi Kajiwara, Anton Visikovskiy, Kazuhiko Mase, Kan Nakatsuji, Tanaka Satoru, Fumio Komori

Nano Letters   17 ( 6 )   3527 - 3532   2017.6

High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates Reviewed

R. Dagher, S. Matta, R. Parret, M. Paillet, B. Jouault, L. Nguyen, M. Portail, M. Zielinski, T. Chassagne, Tanaka Satoru, J. Brault, Y. Cordier, A. Michon

Physica Status Solidi (A) Applications and Materials Science   214 ( 4 )   2017.4

Graphene/SiC(0001) interface structures induced by Si intercalation and their influence on electronic properties of graphene Reviewed

Anton Visikovskiy, Shin Ichi Kimoto, Takashi Kajiwara, Masamichi Yoshimura, Takushi Iimori, Fumio Komori, Tanaka Satoru

Physical Review B   94 ( 24 )   2016.12

Graphene/SiC(0001) interface structures induced by Si intercalation and their influence on electronic properties of graphene

Anton Visikovskiy, Shin-ichi Kimoto, Takashi Kajiwara, Masamichi Yoshimura, Takushi Iimori, Fumio Komori, Satoru Tanaka

PHYSICAL REVIEW B   94 ( 24 )   2016.12

Effects of Pb Intercalation on the Structural and Electronic Properties of Epitaxial Graphene on SiC Reviewed International journal

Ayhan Yurtsever, Jo Onoda, Takushi Iimori, Kohei Niki, Toshio Miyamachi, Masayuki Abe, Seigi Mizuno, Satoru Tanaka, Fumio Komori, Yoshiaki Sugimoto

Small   12 ( 29 )   3956 - 3966   2016.10

Effects of Pb Intercalation on the Structural and Electronic Properties of Epitaxial Graphene on SiC Reviewed

Ayhan Yurtsever, Jo Onoda, Takushi Iimori, Kohei Niki, Toshio Miyamachi, Masayuki Abe, Seigi Mizuno, Tanaka Satoru, Fumio Komori, Yoshiaki Sugimoto

Small   3956 - 3966   2016.8

Graphene: Effects of Pb Intercalation on the Structural and Electronic Properties of Epitaxial Graphene on SiC (Small 29/2016) Reviewed

Ayhan Yurtsever, Jo Onoda, Takushi Iimori, Kohei Niki, Toshio Miyamachi, Masayuki Abe, Seigi Mizuno, Satoru Tanaka, Fumio Komori, Yoshiaki Sugimoto

Small   12 ( 29 )   3882 - 3882   2016.8

Effects of Pb Intercalation on the Structural and Electronic Properties of Epitaxial Graphene on SiC

Ayhan Yurtsever, Jo Onoda, Takushi Iimori, Kohei Niki, Toshio Miyamachi, Masayuki Abe, Seigi Mizuno, Satoru Tanaka, Fumio Komori, Yoshiaki Sugimoto

SMALL   12 ( 29 )   3956 - 3966   2016.8

Graphene Effects of Pb Intercalation on the Structural and Electronic Properties of Epitaxial Graphene on SiC (Small 29/2016) Reviewed

Ayhan Yurtsever, Jo Onoda, Takushi Iimori, Kohei Niki, Toshio Miyamachi, Masayuki Abe, Seigi Mizuno, Tanaka Satoru, Fumio Komori, Yoshiaki Sugimoto

Small   2016.8

Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces Reviewed

Sean W. King, Tanaka Satoru, Robert F. Davis, Robert J. Nemanich

Journal of Vacuum Science and Technology A   33 ( 5 )   2015.9

Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces

Sean W. King, Satoru Tanaka, Robert F. Davis, Robert J. Nemanich

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A   33 ( 5 )   2015.9

Effects of photoexcitation on intense terahertz field-induced nonlinearity in monolayer epitaxial graphene

H. A. Hafez, I. Al-Naib, M. M. Dignam, Y. Sekine, K. Oguri, F. Blanchard, D. G. Cooke, S. Tanaka, F. Komori, H. Hibino, T. Ozaki

Conference on Lasers and Electro-Optics, CLEO 2015 2015 Conference on Lasers and Electro-Optics, CLEO 2015   2015.8

SiCファセット上のグラフェン横方向超格子の形成と物性（１）

田中 悟, 福間 洸平, 林 真吾, 梶原 隆司, Visikovskiy Anton, 飯盛 拓嗣, 家永 紘一郎, 矢治 光一郎, 中辻 寛, 小森 文夫, 田中 宏和, 神田 晶申, Cuong Nguyen Thanh, 岡田 晋

応用物理学会学術講演会講演予稿集   2015.2   3439 - 3439   2015.8

SiCファセット上のグラフェン横方向超格子の形成と物性（2）

福間 洸平, 林 真吾, 梶原 隆司, Visikovskiy Anton, 田中 悟, 飯盛 拓嗣, 家永 紘一郎, 矢治 光一郎, 中辻 寛, 小森 文夫, 田中 宏和, 神田 晶申, Cuong Nguyen Thanh, 岡田 晋

応用物理学会学術講演会講演予稿集   2015.2   3440 - 3440   2015.8

Structural and optical properties of AlN grown by solid source solution growth method Reviewed

Yoshihiro Kangawa, Hiroshige Suetsugu, Michael Knetzger, Elke Meissner, Kouji Hazu, Shigefusa F. Chichibu, Takashi Kajiwara, Satoru Tanaka, Yosuke Iwasaki, Koichi Kakimoto

Japanese Journal of Applied Physics   54 ( 8 )   2015.8

Effects of photoexcitation on intense terahertz fieldinduced nonlinearity in monolayer epitaxial graphene

H. A. Hafez, I. Al-Naib, M. M. Dignam, Y. Sekine, K. Oguri, F. Blanchard, D. G. Cooke, Tanaka Satoru, F. Komori, H. Hibino, T. Ozaki

CLEO: Applications and Technology, CLEO-AT 2015 CLEO Applications and Technology, CLEO-AT 2015   2015.5

Highly Anisotropic Parallel Conduction in the Stepped Substrate of Epitaxial Graphene Grown on Vicinal SiC

Akira Endo, Fumio Komori, Kouhei Morita, Takashi Kajiwara, Satoru Tanaka

JOURNAL OF LOW TEMPERATURE PHYSICS   179 ( 3-4 )   237 - 250   2015.5

Highly Anisotropic Parallel Conduction in the Stepped Substrate of Epitaxial Graphene Grown on Vicinal SiC Reviewed

Akira Endo, Fumio Komori, Kouhei Morita, Takashi Kajiwara, Satoru Tanaka

Journal of Low Temperature Physics   179 ( 3-4 )   237 - 250   2015.5

Fabrication of conical micropore structure on silicon nitride/silicon using focused ion beam milling for biosensor application Reviewed

Nur Hamizah Zainal Ariffin, Hafizal Yahaya, Shunji Shinano, Satoru Tanaka, Abdul Manaf Hashim

Microelectronic Engineering   133   1 - 5   2015.5

Nonlinear terahertz field-induced carrier dynamics in photoexcited epitaxial monolayer graphene Reviewed

Physical Review B - Condensed Matter and Materials Physics   91 ( 3 )   2015.1

Nonlinear terahertz field-induced carrier dynamics in photoexcited epitaxial monolayer graphene Reviewed

Hassan A. Hafez, Ibraheem Al-Naib, Marc M. Dignam, Yoshiaki Sekine, Katsuya Oguri, Francois Blanchard, David G. Cooke, Satoru Tanaka, Fumio Komori, Hiroki Hibino, Tsuneyuki Ozaki

PHYSICAL REVIEW B   91 ( 3 )   2015.1

Polarized micro Raman scattering spectroscopy for curved edges of epitaxial graphene Reviewed

Md Sherajul Islam, A. G. Bhuiyan, S. Tanaka, T. Makino, A. Hashimoto

Applied Physics Letters   105 ( 24 )   2014.12

Analysis of vibrational properties of C-doped hexagonal boron nitride (h-BN) Reviewed

Md Sherajul Islam, Kenji Ushida, Satoru Tanaka, Takayuki Makino, Akihiro Hashimoto

Computational Materials Science   94 ( C )   225 - 233   2014.11

Nonlinear transmission of an intense terahertz field through monolayer graphene Reviewed

H. A. Hafez, I. Al-Naib, K. Oguri, Y. Sekine, M. M. Dignam, A. Ibrahim, D. G. Cooke, S. Tanaka, F. Komori, H. Hibino, T. Ozaki

AIP Advances   4 ( 11 )   2014.11

Nonlinear terahertz-field-induced carrier dynamics in photoexcited graphene

Hassan A. Hafez, Ibraheem Al-Naib, Marc M. Dignam, Yoshiaki Sekine, Katsuya Oguri, Akram Ibrahim, Tanaka Satoru, Fumio Komori, Hiroki Hibino, Tsuneyuki Ozaki

39th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2014 2014 39th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2014   2014.11

Effect of boron and nitrogen doping with native point defects on the vibrational properties of graphene Reviewed

Md Sherajul Islam, Kenji Ushida, Satoru Tanaka, Takayuki Makino, Akihiro Hashimoto

Computational Materials Science   94 ( C )   35 - 43   2014.11

Effect of vacancy defects on phonon properties of hydrogen passivated graphene nanoribbons Reviewed International journal

Md. Sherajul Islam, Kenji Ushida, Tanaka Satoru, Akihiro Hashimoto

Carbon   ( 80 )   146   2014.10

Polarized microscopic laser Raman scattering spectroscopy for edge structure of epitaxial graphene and localized vibrational mode Reviewed

Md Sherajul Islam, D. Tamakawa, S. Tanaka, T. Makino, A. Hashimoto

CARBON   77   1073 - 1081   2014.10

Polarized microscopic laser Raman scattering spectroscopy for edge structure of epitaxial graphene and localized vibrational mode Reviewed

Md Sherajul Islam, D. Tamakawa, S. Tanaka, T. Makino, A. Hashimoto

Carbon   77   1073 - 1081   2014.10

Site-specific atomic and electronic structure analysis of epitaxial silicon oxynitride thin film on SiC(0001) by photoelectron and auger electron diffractions Reviewed

Naoyuki Maejima, Fumihiko Matsui, Hirosuke Matsui, Kentaro Goto, Tomohiro Matsushita, Satoru Tanaka, Hiroshi Daimon

journal of the physical society of japan   83 ( 4 )   2014.4

Site-Specific Atomic and Electronic Structure Analysis of Epitaxial Silicon Oxynitride Thin Film on SiC(0001) by Photoelectron and Auger Electron Diffractions

Naoyuki Maejima, Fumihiko Matsui, Hirosuke Matsui, Kentaro Goto, Tomohiro Matsushita, Satoru Tanaka, Hiroshi Daimon

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN   83 ( 4 )   2014.4

Scanning tunneling microscopic and spectroscopic studies on a crystalline silica monolayer epitaxially formed on hexagonal SiC(000(1)over-bar) surfaces

Hiroshi Tochihara, Tetsuroh Shirasawa, Takayuki Suzuki, Toshio Miyamachi, Takashi Kajiwara, Kazuma Yagyu, Shunsuke Yoshizawa, Toshio Takahashi, Satoru Tanaka, Fumio Komori

APPLIED PHYSICS LETTERS   104 ( 5 )   2014.2

Effect of vacancy defects on phonon properties of hydrogen passivated graphene nanoribbons Reviewed

M. Sherajul Islam, Satoru Tanaka, Akihiro Hashimoto

Carbon   80 ( 1 )   146 - 154   2014.1

Temperature dependence of terahertz transmission through photoexcited graphene

H. A. Hafez, I. Al-Naib, K. Oguri, Y. Sekine, A. Ibrahim, M. M. Dignam, R. Morandotti, Tanaka Satoru, F. Komori, H. Hibino, T. Ozaki

CLEO: Science and Innovations, CLEO_SI 2014 CLEO Science and Innovations, CLEO_SI 2014   2014.1

Temperature Dependence of Terahertz Transmission through Photoexcited Graphene

H. A. Hafez, I. Al-Naib, K. Oguri, Y. Sekine, A. Ibrahim, M. M. Dignam, R. Morandotti, Tanaka Satoru, F. Komori, H. Hibino, T. Ozaki

CLEO: Applications and Technology, CLEO_AT 2014 CLEO Applications and Technology, CLEO_AT 2014   2014.1

Temperature Dependence of Terahertz Transmission through Photoexcited Graphene

H. A. Hafez, I. Al-Naib, K. Oguri, Y. Sekine, A. Ibrahim, M. M. Dignam, R. Morandotti, Tanaka Satoru, F. Komori, H. Hibino, T. Ozaki

CLEO: QELS_Fundamental Science, CLEO_QELS 2014 CLEO QELS_Fundamental Science, CLEO_QELS 2014   2014.1

Scanning tunneling microscopic and spectroscopic studies on a crystalline silica monolayer epitaxially formed on hexagonal SiC (000 1 ̄) surfaces Reviewed

104 ( 5 )   2014.1

Intense terahertz-field-induced nonlinearity in graphene

H. Hafez, I. Al-Naib, G. Sharma, R. Morandotti, Tanaka Satoru, F. Komori, K. Oguri, H. Hibino, T. Ozaki

2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013   2013.12

Numerical experiments on phonon properties of isotope and vacancy-type disordered graphene Reviewed

Md Sherajul Islam, Kenji Ushida, Satoru Tanaka, Akihiro Hashimoto

Diamond and Related Materials   40   115 - 122   2013.11

Numerical experiments on phonon properties of isotope and vacancy-type disordered graphene Reviewed International journal

Md. Sherajul Islam, Kenji Ushida, Tanaka Satoru, Akihiro Hashimoto

Diamond & Related Materials   ( 40 )   115 - 122   2013.10

Numerical analysis on vacancy induced vibrational properties of graphene nanoribbons Reviewed International journal

Md. Sherajul Islam, Kenji Ushida, Tanaka Satoru, Akihiro Hashimoto

Computational Materials Science   ( 79 )   356 - 361   2013.7

Numerical analysis on vacancy induced vibrational properties of graphene nanoribbons Reviewed

Md Sherajul Islam, Kenji Ushida, Satoru Tanaka, Akihiro Hashimoto

Computational Materials Science   79   356 - 361   2013.7

Graphene nanoribbons grown on epitaxial SixCyOz layer on Vicinal SiC(0001) surfaces by chemical vapor deposition Reviewed

Yoshihito Hagihara, Takashi Kajiwara, Anton Visikovskiy, Satoru Tanaka

Applied Physics Express   6 ( 5 )   2013.5

Graphene Nanoribbons Grown on Epitaxial SixCyOz Layer on Vicinal SiC(0001) Surfaces by Chemical Vapor Deposition

Yoshihito Hagihara, Takashi Kajiwara, Anton Visikovskiy, Satoru Tanaka

APPLIED PHYSICS EXPRESS   6 ( 5 )   2013.5

Erratum Graphene nanoribbons on vicinal SiC surfaces by molecular beam epitaxy (Physical Review B (2013) 87 (121407(R)) DOI:10.1103/PhysRevB.87.121407) Reviewed

Takashi Kajiwara, Yuzuru Nakamori, Anton Visikovskiy, Takushi Iimori, Fumio Komori, Kan Nakatsuji, Kazuhiko Mase, Satoru Tanaka

Physical Review B - Condensed Matter and Materials Physics   87 ( 15 )   2013.4

Graphene nanoribbons on vicinal SiC surfaces by molecular beam epitaxy (vol 87, 121407, 2013)

Takashi Kajiwara, Yuzuru Nakamori, Anton Visikovskiy, Takushi Iimori, Fumio Komori, Kan Nakatsuji, Kazuhiko Mase, Satoru Tanaka

PHYSICAL REVIEW B   87 ( 15 )   2013.4

Graphene nanoribbons on vicinal SiC surfaces by molecular beam epitaxy Reviewed

Takashi Kajiwara, Yuzuru Nakamori, Anton Visikovskiy, Takushi Iimori, Fumio Komori, Kan Nakatsuji, Kazuhiko Mase, Satoru Tanaka

Physical Review B - Condensed Matter and Materials Physics   87 ( 12 )   2013.3

Graphene nanoribbons on vicinal SiC surfaces by molecular beam epitaxy

Takashi Kajiwara, Yuzuru Nakamori, Anton Visikovskiy, Takushi Iimori, Fumio Komori, Kan Nakatsuji, Kazuhiko Mase, Satoru Tanaka

PHYSICAL REVIEW B   87 ( 12 )   2013.3

Electrical characteristics of surface-stoichiometry-controlled p-GaN schottky contacts Reviewed

Kenji Shiojima, Toshifumi Takahashi, Naoki Kaneda, Tomoyoshi Mishima, Takashi Kajiwara, Satoru Tanaka

Japanese journal of applied physics   52 ( 1 PART2 )   2013.1

Role of atomic terraces and steps in the electron transport properties of epitaxial graphene grown on SiC Reviewed

H. Kuramochi, S. Odaka, K. Morita, S. Tanaka, H. Miyazaki, M. V. Lee, S. L. Li, H. Hiura, K. Tsukagoshi

AIP Advances   2 ( 1 )   2012.12

A Raman imaging study of growth process of few-layer epitaxial graphene on vicinal 6H-SiC Reviewed

Susumu Kamoi, Kenji Kisoda, Noriyuki Hasuike, Hiroshi Harima, Kouhei Morita, Tanaka Satoru, Akihiro Hashimoto, Hiroki Hibino

Diamond and Related Materials   25   80 - 83   2012.5

Uniaxial deformation of graphene Dirac cone on a vicinal SiC substrate

Kan Nakatsuji, Tsuguo Yoshimura, Fumio Komori, Kouhei Morita, Satoru Tanaka

PHYSICAL REVIEW B   85 ( 19 )   2012.5

A Raman imaging study of growth process of few-layer epitaxial graphene on vicinal 6H-SiC

Susumu Kamoi, Kenji Kisoda, Noriyuki Hasuike, Hiroshi Harima, Kouhei Morita, Satoru Tanaka, Akihiro Hashimoto, Hiroki Hibino

DIAMOND AND RELATED MATERIALS   25   80 - 83   2012.5

Uniaxial deformation of graphene Dirac cone on a vicinal SiC substrate Reviewed

Kan Nakatsuji, Tsuguo Yoshimura, Fumio Komori, Kouhei Morita, Satoru Tanaka

Physical Review B - Condensed Matter and Materials Physics   85 ( 19 )   2012.5

Role of atomic terraces and steps in the electron transport properties of epitaxial graphene grown on SiC Reviewed International journal

H. Kuramochi,S. Odaka, K. Morita, S. Tanaka, H. Miyazaki, M. V. Lee, S.-L. Li, H. Hiura, and K. Tsukagoshi

AIP ADVANCES   ( 2 )   2012.2

Formation of epitaxial 3C-SiC layers by microwave plasma-assisted carbonization Reviewed

Yoshimine Kato, Masaki Goto, Ryota Sato, Kazuhiro Yamada, Akira Koga, Kungen Tsutsui, Chenda Srey, Tanaka Satoru

Surface and Coatings Technology   206 ( 5 )   990 - 993   2011.11

Formation of epitaxial 3C-SiC layers by microwave plasma-assisted carbonization

Yoshimine Kato, Masaki Goto, Ryota Sato, Kazuhiro Yamada, Akira Koga, Kungen Teii, Chenda Srey, Satoru Tanaka

SURFACE & COATINGS TECHNOLOGY   206 ( 5 )   990 - 993   2011.11

Formation of epitaxial 3C-SiC layers by microwave plasma-assisted carbonization Reviewed International journal

Yoshimine Kato, Masaki Goto a, Ryota Sato a, Kazuhiro Yamada a, Akira Koga b, Kungen Teii, Chenda Srey, Satoru Tanaka

Surface & Coatings Technology   ( 206 )   2011.8

Site-Specific Stereograph of SiC(0001) Surface by Inverse Matrix Method Reviewed International journal

Kentaro GOTO, Mie HASHIMOTO, Tomoaki HATAYAMA, Tomohiro MATSUSHITA,Yukako KATO, Satoru TANAKA, and Hiroshi DAIMON

Journal of the Physical Society of Japan 80 (2011) 013601   ( 80 )   2011.5

Si 2p core level shifts of the epitaxial SiON layer on a SiC(0001), studied by photoemissin spectroscopy

T. Shirasawa, Tanaka Satoru, T. Muro, Y. Tamenori, Y. Harada, T. Tokushima, T. Kinoshita, S. Shin, T. Takahashi, H. Tochihara

7th International Forum on Advanced Material Science and Technology, IFAMST-7 Advanced Material Science and Technology   15 - 19   2011.3

Site-Specific Stereograph of SiC(0001) Surface by Inverse Matrix Method

Fumihiko Matsui, Noriyuki Nishikayama, Naoyuki Maejima, Hirosuke Matsui, Kentaro Goto, Mie Hashimoto, Tomoaki Hatayama, Tomohiro Matsushita, Yukako Kato, Satoru Tanaka, Hiroshi Daimon

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN   80 ( 1 )   2011.1

Site-specific stereograph of SiC(0001) surface by inverse matrix method Reviewed

Fumihiko Matsui, Noriyuki Nishikayama, Naoyuki Maejima, Hirosuke Matsui, Kentaro Goto, Mie Hashimoto, Tomoaki Hatayama, Tomohiro Matsushita, Yukako Kato, Satoru Tanaka, Hiroshi Daimon

journal of the physical society of japan   80 ( 1 )   2011.1

Few-layer epitaxial graphene grown on vicinal 6H-SiC studied by deep ultraviolet Raman spectroscopy Reviewed

Kenji Kisoda, Susumu Kamoi, Noriyuki Hasuike, Hiroshi Harima, Kouhei Morita, Satoru Tanaka, Akihiro Hashimoto

Applied Physics Letters   97 ( 3 )   2010.7

Shape, width, and replicas of pi bands of single-layer graphene grown on Si-terminated vicinal SiC(0001)

Kan Nakatsuji, Yuki Shibata, Ryota Niikura, Fumio Komori, Kouhei Morita, Satoru Tanaka

PHYSICAL REVIEW B   82 ( 4 )   2010.7

Few-layer epitaxial graphene grown on vicinal 6H-SiC studied by deep ultraviolet Raman spectroscopy

Kenji Kisoda, Susumu Kamoi, Noriyuki Hasuike, Hiroshi Harima, Kouhei Morita, Satoru Tanaka, Akihiro Hashimoto

APPLIED PHYSICS LETTERS   97 ( 3 )   2010.7

Shape, width, and replicas of π bands of single-layer graphene grown on Si-terminated vicinal SiC(0001) Reviewed

82 ( 4 )   2010.7

Anisotropic transport in graphene on SiC substrate with periodic nanofacets Reviewed

S. Odaka, H. Miyazaki, S. L. Li, A. Kanda, K. Morita, S. Tanaka, Y. Miyata, H. Kataura, K. Tsukagoshi, Y. Aoyagi

Applied Physics Letters   96 ( 6 )   2010.2

Anisotropic layer-by-layer growth of graphene on vicinal SiC(0001) surfaces

Satoru Tanaka, Kouhei Morita, Hiroki Hibino

PHYSICAL REVIEW B   81 ( 4 )   2010.1

Deep UV Raman spectroscopy of epitaxial graphenes on vicinal 6H-SiC substrates

S. Kamoi, N. Hasuike, K. Kisoda, H. Harima, K. Morita, Tanaka Satoru, A. Hashimoto

13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 Silicon Carbide and Related Materials 2009 ICSCRM 2009   611 - 614   2010.1

Anisotropic layer-by-layer growth of graphene on vicinal SiC(0001) surfaces Reviewed

Tanaka Satoru, Kouhei Morita, Hiroki Hibino

Physical Review B - Condensed Matter and Materials Physics   81 ( 4 )   2010.1

Atomic-layer-resolved bandgap structure of an ultrathin oxynitride-silicon film epitaxially grown on 6H-SiC (0001) Reviewed

T. Shirasawa, K. Hayashi, H. Yoshida, S. Mizuno, S. Tanaka, T. Muro, Y. Tamenori, Y. Harada, T. Tokushima, Y. Horikawa, E. Kobayashi, T. Kinoshita, S. Shin, T. Takahashi, Y. Ando, K. Akagi, S. Tsuneyuki, H. Tochihara

Physical Review B - Condensed Matter and Materials Physics   79 ( 24 )   2009.6

Atomic-layer-resolved bandgap structure of an ultrathin oxynitride-silicon film epitaxially grown on 6H-SiC(0001) Reviewed

T. Shirasawa, K. Hayashi, H. Yoshida, S. Mizuno, S. Tanaka, T. Muro, Y. Tamenori, Y. Harada, T. Tokushima, Y. Horikawa, E. Kobayashi, T. Kinoshita, S. Shin, T. Takahashi, Y. Ando, K. Akagi, S. Tsuneyuki, H. Tochihara

PHYSICAL REVIEW B   79 ( 24 )   2009.6

Electron beam irradiation effect for solid C₆₀ epitaxy on graphene Reviewed

Akihiro Hashimoto, Hiromitsu Terasaki, Akio Yamamoto, Tanaka Satoru

Diamond and Related Materials   18 ( 2-3 )   388 - 391   2009.2

Stable surface termination on vicinal 6H-SiC(0001) surfaces

Kenjiro Hayashi, Kouhei Morita, Seigi Mizuno, Hiroshi Tochihara, Satoru Tanaka

SURFACE SCIENCE   603 ( 3 )   566 - 570   2009.2

Stable surface termination on vicinal 6H-SiC(0 0 0 1) surfaces Reviewed

Kenjiro Hayashi, Kouhei Morita, Seigi Mizuno, Hiroshi Tochihara, Tanaka Satoru

Surface Science   603 ( 3 )   566 - 570   2009.2

van der Waals epitaxy of solid C₆₀ on graphene sheet Reviewed

Akihiro Hashimoto, Kohsuke Iwao, Satoru Tanaka, Akio Yamamoto

Diamond and Related Materials   17 ( 7-10 )   1622 - 1624   2008.7

van der Waals epitaxy of solid C-60 on graphene sheet

Akihiro Hashimoto, Kohsuke Iwao, Satoru Tanaka, Akio Yamamoto

DIAMOND AND RELATED MATERIALS   17 ( 7-10 )   1622 - 1624   2008.7

Three-dimensional laser microfabrication of metals, semiconductors, and dielectrics

Saulius Juodkazis, Koichi Nishimura, Hiroki Okuno, Yusuke Tabuchi, Shigeki Matsuo, Satoru Tanaka, Hiroaki Misawa

International Conference on Lasers, Applications, and Technologies 2007: Laser-assisted Micro- and Nanotechnologies International Conference on Lasers, Applications, and Technologies 2007 Laser-assisted Micro- and Nanotechnologies   2007.11

Ordering distance of surface nanofacets on vicinal 4H-SiC(0001) Reviewed

Masahiro Fujii, Tanaka Satoru

Physical Review Letters   99 ( 1 )   2007.7

Ordering distance of surface nanofacets on vicinal 4H-SiC(0001)

Masahiro Fujii, Satoru Tanaka

PHYSICAL REVIEW LETTERS   99 ( 1 )   2007.7

Nucleation and growth mode of GaN on vicinal SiC surfaces Reviewed

Masato Ebihara, Satoru Tanaka, Ikuo Suemune

Japanese Journal of Applied Physics, Part 2: Letters   46 ( 12-16 )   L348 - L351   2007.4

Nucleation and growth mode of GaN on vicinal SiC surfaces

Masato Ebihara, Satoru Tanaka, Ikuo Suemune

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   46 ( 12-16 )   L348 - L351   2007.4

Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface Reviewed

Tetsuroh Shirasawa, Kenjiro Hayashi, Seigi Mizuno, Satoru Tanaka, Kan Nakatsuji, Fumio Komori, Hiroshi Tochihara

Physical Review Letters   98 ( 13 )   2007.3

Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface

Tetsuroh Shirasawa, Kenjiro Hayashi, Seigi Mizuno, Satoru Tanaka, Kan Nakatsuji, Fumio Komori, Hiroshi Tochihara

PHYSICAL REVIEW LETTERS   98 ( 13 )   2007.3

Laser-induced microexplosion confined in the bulk of a sapphire cystal Evidence of multimegabar pressures Reviewed

S. Juodkazis, K. Nishimura, S. Tanaka, H. Misawa, E. G. Gamaly, B. Luther-Davies, L. Hallo, P. Nicolai, V. T. Tikhonchuk

Physical Review Letters   96 ( 16 )   2006.5

Nucleation stages of carbon nanotubes on SiC(0001) by surface decomposition Reviewed

Kenjiro Hayashl, Seigi Mizuno, Satoru Tanaka, Hiroki Toyoda, Hiroshi Tochihara, Ikuo Suemune

Japanese Journal of Applied Physics, Part 2: Letters   44 ( 24-27 )   L803 - L805   2005.6

SiC surface nanostructures induced by self-ordering of nano-facets Reviewed

Tanaka Satoru, H. Nakagawa, I. Suemune

Materials Science Forum   457-460 ( I )   407 - 410   2004

Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy Reviewed

J. Brault, E. Bellet-Amalric, S. Tanaka, F. Enjalbert, D. Le Si Dang, E. Sarigiannidou, J. L. Rouviere, G. Feuillet, B. Daudin

Physica Status Solidi (B) Basic Research   240 ( 2 )   314 - 317   2003.11

A UV light-emitting diode incorporating GaN quantum dots Reviewed

Satoru Tanaka, Jeong Sik Lee, Peter Ramvall, Hiroaki Okagawa

Japanese Journal of Applied Physics, Part 2: Letters   42 ( 8 A )   L885 - L887   2003.8

Structural anisotropy in GaN films grown on vicinal 4H-SiC surfaces by metallorganic molecular-beam epitaxy Reviewed

Jun Ichi Kato, Satoru Tanaka, Satoshi Yamada, Ikuo Suemune

Applied Physics Letters   83 ( 8 )   1569 - 1571   2003.8

Realization of low dislocation GaN/sapphire wafers by 3-step metalorganic vapor phase epitaxial growth with island induced dislocation control Reviewed

Hajime Fujikura, Kazuyuki Iizuka, Tanaka Satoru

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   42 ( 5 A )   2767 - 2772   2003.5

Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates Reviewed

Journal of Applied Physics   93 ( 5 )   3108 - 3110   2003.3

II-VI quantum dots grown by MOVPE Reviewed

I. Suemune, K. Yoshida, H. Kumano, T. Tawara, A. Ueta, S. Tanaka

Journal of Crystal Growth   248   301 - 309   2003.2

II-VI quantum dots grown by MOVPE Reviewed

Suemune, I, K Yoshida, H Kumano, T Tawara, A Ueta, S Tanaka

JOURNAL OF CRYSTAL GROWTH   248   301 - 309   2003.2

Self-ordering of nanofacets on vicinal sic surfaces Reviewed

Hiroshi Nakagawa, Satoru Tanaka, Ikuo Suemune

Physical Review Letters   91 ( 22 )   2003.1

GaN quantum dot UV light emitting diode Reviewed

Jeong Sik Lee, Tanaka Satoru, Peter Ramvall, Hiroaki Okagawa

Materials Research Society Symposium - Proceedings   798   11 - 16   2003

Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence Reviewed

A. Petersson, Anders Gustafsson, L. Samuelson, Satoru Tanaka, Yoshinobu Aoyagi

MRS Internet Journal of Nitride Semiconductor Research   7   2002.12

Lateral arrangement of self-assembled GaN islands on periodically stepped AlN surfaces Reviewed

Physica Status Solidi (B) Basic Research   234 ( 3 )   939 - 942   2002.12

Nitrogen-doped p-type ZnO layers prepared with H₂O vapor-assisted metalorganic molecular-beam epitaxy Reviewed

A. B.M.Almamun Ashrafi, Ikuo Suemune, Hidekazu Kumano, Satoru Tanaka

Japanese Journal of Applied Physics, Part 2: Letters   41 ( 11 B )   L1281 - L1284   2002.11

Nitrogen-doped p-type ZnO layers prepared with H2O vapor-assisted metalorganic molecular-beam epitaxy Reviewed

ABMA Ashrafi, Suemune, I, H Kumano, S Tanaka

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   41 ( 11B )   L1281 - L1284   2002.11

Growth of AlN-SiC solid solutions by sequential supply epitaxy Reviewed

A Avramescu, H Hirayama, Y Aoyagi, S Tanaka

JOURNAL OF CRYSTAL GROWTH   234 ( 2-3 )   435 - 439   2002.1

Growth of AlN-SiC solid solutions by sequential supply epitaxy Reviewed

A. Avramescu, H. Hirayama, Y. Aoyagi, S. Tanaka

Journal of Crystal Growth   234 ( 2-3 )   435 - 439   2002.1

Near K-edge absorption spectra of III-V nitrides Reviewed

K. Fukui, R. Hirai, A. Yamamoto, H. Hirayama, Y. Aoyagi, S. Yamaguchi, H. Amano, I. Akasaki, Tanaka Satoru

Physica Status Solidi (B) Basic Research   228 ( 2 )   461 - 465   2001.11

Near K-edge absorption spectra of III-V nitrides Reviewed

K Fukui, R Hirai, A Yamamoto, H Hirayama, Y Aoyagi, S Yamaguchi, H Amano, Akasaki, I, S Tanaka

PHYSICA STATUS SOLIDI B-BASIC RESEARCH   228 ( 2 )   461 - 465   2001.11

On phonon confinement effects and free carrier concentration in GaN quantum dots Reviewed

M. Kuball, J. Gleize, Satoru Tanaka, Y. Aoyagi

Physica Status Solidi (B) Basic Research   228 ( 1 )   195 - 198   2001.11

Quantum dot formation and crystal growth using an atomic nano-mask Reviewed

Y Aoyagi, S Tanaka, H Hirayama, M Takeuchi

PHYSICA E   11 ( 2-3 )   89 - 93   2001.10

Nucleation and growth kinetics of AIN films on atomically smooth 6H-SiC (0001) surfaces Reviewed

Satoshi Yamada, Jun Ichi Kato, Satoru Tanaka, Ikuo Suemune, Adrian Avramescu, Yoshinobu Aoyagi, Nobuaki Teraguchi, Akira Suzuki

Applied Physics Letters   78 ( 23 )   3612 - 3614   2001.6

Resonant Raman scattering on self-assembled GaN quantum dots Reviewed

M. Kuball, J. Gleize, Satoru Tanaka, Yoshinobu Aoyagi

Applied Physics Letters   78 ( 7 )   987 - 989   2001.2

Quantum dot formation and crystal growth using an atomic nano-mask Reviewed

Yoshinobu Aoyagi, Satoru Tanaka, Hideki Hirayama, Misaichi Takeuchi

Physica E: Low-Dimensional Systems and Nanostructures   11 ( 2-3 )   89 - 93   2001.1

Microcavities with distributed Bragg reflectors based on ZnSe/MgS superlattice grown by MOVPE Reviewed

T Tawara, H Yoshida, T Yogo, S Tanaka, Suemune, I

JOURNAL OF CRYSTAL GROWTH   221   699 - 703   2000.12

Anti-surfactant in III-nitride epitaxy - quantum dot formation and dislocation termination Reviewed

Satoru Tanaka, Misaichi Takeuchi, Yoshinobu Aoyagi

Japanese Journal of Applied Physics, Part 2: Letters   39 ( 8 B )   L831 - L834   2000.8

Formation of periodic steps with a unit-cell height on 6H-SiC (0001) surface by HCl etching Reviewed

Shun Ichi Nakamura, Tsunenobu Kimoto, Hiroyuki Matsunami, Satoru Tanaka, Nobuaki Teraguchi, Akira Suzuki

Applied Physics Letters   76 ( 23 )   3412 - 3414   2000.6

Origin of size distributions in ZnSe self-organized quantum dots grown on ZnS layers Reviewed

Takehiko Tawara, Satoru Tanaka, Hidekazu Kumano, Ikuo Suemune

Journal of Electronic Materials   29 ( 5 )   515 - 519   2000.5

Origin of size distributions in ZnSe self-organized quantum dots grown on ZnS layers Reviewed

T Tawara, S Tanaka, H Kumano, Suemune, I

JOURNAL OF ELECTRONIC MATERIALS   29 ( 5 )   515 - 519   2000.5

Optical properties of GaN quantum dots Reviewed

Peter Ramvall, Philippe Riblet, Shintaro Nomura, Yoshinobu Aoyagi, Satoru Tanaka

Journal of Applied Physics   87 ( 8 )   3883 - 3890   2000.4

Investigations of optical and electrical properties of In-doped GaN films grown by gas-source molecular beam epitaxy Reviewed

X. Q. Shen, P. Ramvall, P. Riblet, Y. Aoyagi, K. Hosi, S. Tanaka, I. Suemune

The 7th International Conference on Chemical Beam Epitaxy and Related Growth Techniques Journal of Crystal Growth   209 ( 2-3 )   396 - 400   2000.2

MOVPE growth of ZnSe/ZnMgS distributed Bragg reflectors with high refractive-index contrast Reviewed

T. Tawara, I. Suemune, S. Tanaka

The 9th International Conference on II-VI Compounds Journal of Crystal Growth   214   1019 - 1023   2000.1

Microcavities with distributed Bragg reflectors based on ZnSe/MgS superlattice grown by MOVPE Reviewed

T. Tawara, H. Yoshida, T. Yogo, Tanaka Satoru, I. Suemune

Journal of Crystal Growth   221 ( 1-4 )   699 - 703   2000.1

Cathodoluminescence Studies of Spontaneously Formed Low-dimensional AlGaN Structures Reviewed

Anders Petersson, Anders Gustafsson, Satoru Tanaka, Yoshinobu Aoyagi, Lars Samuelson

Physica Scripta T   79   56 - 59   1999.12

Fabrication of self-assembling AIGaN quantum dot on AIGaN surfaces using anti-surfactant Reviewed

H. Hirayama, Y. Aoyagi, Tanaka Satoru

Materials Research Society Symposium - Proceedings   537   1999.12

Fabrication of self-assembling AlGaN quantum dot on AlGaN surfaces using anti-surfactant Reviewed

H. Hirayama, Y. Aoyagi, S. Tanaka

MRS Internet Journal of Nitride Semiconductor Research   4 ( SUPPL. 1 )   1999.12

Effect of indium doping on the transient optical properties of GaN films Reviewed

Hidekazu Kumano, Ken Ichi Hoshi, Satoru Tanaka, Ikuo Suemune, Xu Qiang Shen, Philippe Riblet, Peter Ramvall, Yoshinobu Aoyagi

Applied Physics Letters   75 ( 19 )   2879 - 2881   1999.11

Confinement induced decrease of the exciton-longitudinal optical phonon coupling in GaN quantum dots Reviewed

Peter Ramvall, Tanaka Satoru, Shintaro Nomura, Philippe Riblet, Yoshinobu Aoyagi

Applied Physics Letters   75 ( 13 )   1935 - 1937   1999.9

Growth and luminescence properties of self-organized ZnSe quantum dots Reviewed

Takehiko Tawara, Tanaka Satoru, Hidekazu Kumano, Ikuo Suemune

Applied Physics Letters   75 ( 2 )   235 - 237   1999.7

Cathodoluminescence spectroscopy and imaging of individual GaN dots Reviewed

Anders Petersson, Anders Gustafsson, Lars Samuelson, Tanaka Satoru, Yoshinobu Aoyagi

Applied Physics Letters   74 ( 23 )   3513 - 3515   1999.6

Fabrication of self-assembling InGaN and AlGaN quantum dots on AlGaN surfaces using anti-surfactant Reviewed

H Hirayama, S Tanaka, Y Aoyagi

MICROELECTRONIC ENGINEERING   47 ( 1-4 )   251 - +   1999.6

Fabrication of self-assembling InGaN and AlGaN quantum dots on AlGaN surfaces using anti-surfactant Reviewed

Hideki Hirayama, Satoru Tanaka, Yoshinobu Aoyagi

Proceedings of the 1998 4th International Symposium on New Phenomena in Mesoscopic Structures (NPMS'98) Microelectronic Engineering   47 ( 1 )   251 - 253   1999.6

Enhancement of surface decomposition using supersonic beam Direct evidence from GaN quantum dot formations on AlGaN surfaces in gas-source molecular beam epitaxy Reviewed

X. Q. Shen, S. Tanaka, S. Iwai, Y. Aoyagi

Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) Journal of Crystal Growth   201   402 - 406   1999.5

High quality GaN film growth on AlN buffer layer, pretreated with alternating pulsative supply of TMG and NH₃ Reviewed

Jin Soo Hwang, Satoru Tanaka, Sohachi Iwai, Yoshinobu Aoyagi, Seeyearl Seong

Journal of Crystal Growth   200 ( 1-2 )   63 - 69   1999.4

Semiconductor photonic dots Visible wavelength-sized optical resonators Reviewed

I. Suemune, A. Ueta, A. Avramescu, Tanaka Satoru, H. Kumano, K. Uesugi

Applied Physics Letters   74 ( 14 )   1963 - 1965   1999.4

Fabrication of self-assembling InGaN and AlGaN quantum dots on AlGaN surfaces using anti-surfactant Reviewed

Hideki Hirayama, Tanaka Satoru, Yoshinobu Aoyagi

Microelectronic Engineering   49 ( 3-4 )   287 - 290   1999.1

Size-dependent optical nonlinearities in GaN quantum dots Reviewed

Philippe Riblet, Satoru Tanaka, Peter Ramvall, Shintaro Nomura, Yoshinobu Aoyagi

Solid State Communications   109 ( 6 )   377 - 381   1999.1

Optical characterization of the "E2" deep level in GaN Reviewed

P. Hacke, P. Ramvall, Tanaka Satoru, Y. Aoyagi, A. Kuramata, K. Horino, H. Munekata

Applied Physics Letters   74 ( 4 )   543 - 545   1999.1

GaN quantum structures with fractional dimension -from quantum well to quantum dot Reviewed

Tanaka Satoru, I. Suemune, P. Ramvall, Y. Aoyagi

Physica Status Solidi (B) Basic Research   216 ( 1 )   431 - 434   1999.1

Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces Reviewed

Hideki Hirayama, Satoru Tanaka, Peter Ramvall, Yoshinobu Aoyagi

Applied Physics Letters   72 ( 14 )   1736 - 1738   1998.12

The formation of GaN dots on Al_xGa_1-xN surfaces using Si in gas-source molecular beam epitaxy Reviewed

Xu Qiang Shen, Satoru Tanaka, Sohachi Iwai, Yoshinobu Aoyagi

Applied Physics Letters   72 ( 3 )   344 - 346   1998.12

Observation of confinement-dependent exciton binding energy of GaN quantum dots Reviewed

Peter Ramvall, Tanaka Satoru, Shintaro Nomura, Philippe Riblet, Yoshinobu Aoyagi

Applied Physics Letters   73 ( 8 )   1104 - 1106   1998.12

Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy Reviewed

R. S. Kern, L. B. Rowland, S. Tanaka, R. F. Davis

Journal of Materials Research   13 ( 7 )   1816 - 1822   1998.7

Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy Reviewed

RS Kern, LB Rowland, S Tanaka, RF Davis

JOURNAL OF MATERIALS RESEARCH   13 ( 7 )   1816 - 1822   1998.7

Chemical beam epitaxy of GaN using triethylgallium and ammonia Reviewed

X. Q. Shen, Tanaka Satoru, S. Iwai, Y. Aoyagi

Journal of Crystal Growth   188 ( 1-4 )   86 - 91   1998.6

Growth mechanisms of GaN quantum dots and their optical properties Reviewed

S Tanaka, P Ramvall, S Nomura, H Hirayama, Y Aoyagi

ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS   81 ( 6 )   20 - 26   1998.6

Real-time observations of the GaN dot formation by controlling growth mode on the AlGaN surface in gas-source molecular beam epitaxy Reviewed

X. Q. Shen, S. Tanaka, S. Iwai, Y. Aoyagi

Journal of Crystal Growth   189-190   147 - 152   1998.6

Influences of surface V/III ratio on the film quality during the GaN growth in gas-source molecular beam epitaxy Reviewed

Xu Qiang Shen, Tanaka Satoru, Sohachi Iwai, Yoshinobu Aoyagi

Japanese Journal of Applied Physics, Part 2: Letters   37 ( 6 A )   1998.6

Growth mechanisms of GaN quantum dots and their optical properties Reviewed

Satoru Tanaka, Peter Ramvall, Shintaro Nomura, Hideki Hirayama, Yoshinobu Aoyagi

Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)   81 ( 6 )   20 - 26   1998.6

Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy Reviewed

R. S. Kern, S. Tanaka, L. B. Rowland, R. F. Davis

Journal of Crystal Growth   183 ( 4 )   581 - 593   1998.2

Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy Reviewed

RS Kern, S Tanaka, LB Rowland, RF Davis

JOURNAL OF CRYSTAL GROWTH   183 ( 4 )   581 - 593   1998.2

Application of ζ-factor method to Ti-Al-Cr system in analytical electron microscopy Reviewed

47 ( 1 )   9 - 15   1998.1

Characterization of GaN quantum dots on AlGaN/SiC substrate using cathodoluminescence Reviewed

A. Petersson, S. Tanaka, Y. Aoyagi, L. Samuelson

Materials Science Forum   264-268 ( PART 2 )   1335 - 1338   1998.1

Drastic change in the GaN film quality by in-situ controlling surface reconstructions in GSMBE Reviewed

X. Q. Shen, S. Tanaka, S. Iwai, Y. Aoyagi

Proceedings of the 1997 MRS Fall Meeting Materials Research Society Symposium - Proceedings   482   223 - 226   1997.12

New Buffering Process in Preparation of Hiah Quality GaN Films Reviewed

Jin Soo Hwang, Seeyearl Seong, Satoru Tanaka, Sohachi Iwai, Yoshinobu Aoyagi, Paul Joe Chong

Bulletin of the Korean Chemical Society   18 ( 11 )   1133 - 1135   1997.12

InGaN quantum dots fabricated on AlGaN surfaces - growth mechanism and optical properties Reviewed

H. Hirayama, S. Tanaka, P. Ramvall, Y. Aoyagi

Proceedings of the 1997 MRS Fall Meeting Materials Research Society Symposium - Proceedings   482   737 - 742   1997.12

Simulated emission from optically pumped GaN quantum dots Reviewed

Tanaka Satoru, Hideki Hirayama, Yoshinobu Aoyagi, Yukio Narukawa, Yoichi Kawakami, Shizuo Fujita, Shigeo Fujita

Applied Physics Letters   71 ( 10 )   1299 - 1301   1997.9

Growth and doping via gas-source molecular beam epitaxy of SiC and SiC/AlN heterostructures and their microstructural and electrical characterization Reviewed

Diamond and Related Materials   6 ( 10 )   1282 - 1288   1997.8

Growth and doping via gas-source molecular beam epitaxy of SiC and SiC/AlN heterostructures and their microstructural and electrical characterization Reviewed

RS Kern, K Jarrendahl, S Tanaka, RF Davis

DIAMOND AND RELATED MATERIALS   6 ( 10 )   1282 - 1288   1997.8

Homoepitaxial SiC growth by molecular beam epitaxy Reviewed

Physica Status Solidi (B) Basic Research   202 ( 1 )   379 - 404   1997.7

Homoepitaxial SiC growth by molecular beam epitaxy Reviewed

RS Kern, K Jarrendahl, S Tanaka, RF Davis

PHYSICA STATUS SOLIDI B-BASIC RESEARCH   202 ( 1 )   379 - 404   1997.7

Gas-source molecular beam epitaxy of III-V nitrides Reviewed

R. F. Davis, M. J. Paisley, Z. Sitar, D. J. Kester, K. S. Ailey, K. Linthicum, L. B. Rowland, S. Tanaka, R. S. Kern

Journal of Crystal Growth   178 ( 1-2 )   87 - 101   1997.6

Growth of A1N and GaN thin films via OMVPE and gas source MBE and their characterization Reviewed

Robert F. Davis, T. W. Weeks, M. D. Bremser, S. Tanaka, R. S. Kern, Z. Sitar, K. S. Ailey, W. G. Perry, C. Wang

Solid-State Electronics   41 ( 2 SPEC. ISS. )   129 - 134   1997.2

GaN quantum dots in Al_xGa_1-xN confined layer structures Reviewed

S. Tanaka, H. Hirayama, S. Iwai, Y. Aoyagi

Proceedings of the 1996 MRS Fall Symposium Materials Research Society Symposium - Proceedings   449   135 - 140   1997.1

Reduction of the defect density in GaN films using ultra-thin AlN buffer layers on 6H-SiC Reviewed

Satoru Tanaka, Sohachi Iwai, Yoshinobu Aoyagi

Journal of Crystal Growth   170 ( 1-4 )   329 - 334   1997.1

Self-assembling GaN quantum dots on Al_xGa_1-xN surfaces using a surfactant Reviewed

Satoru Tanaka, Sohachi Iwai, Yoshinobu Aoyagi

Applied Physics Letters   69 ( 26 )   4096 - 4098   1996.12

Electrical characteristics of metal/AlN/n-type 6H-SiC(0001) heterostructures Reviewed

M. O. Aboelfotoh, R. S. Kern, S. Tanaka, R. F. Davis, C. I. Harris

Applied Physics Letters   69 ( 19 )   2873 - 2875   1996.11

Growth of SiC and III-V nitride thin films via gas-source molecular beam epitaxy and their characterization Reviewed

Robert F. Davis, S. Tanaka, L. B. Rowland, R. S. Kern, Z. Sitar, S. K. Ailey, C. Wang

Journal of Crystal Growth   164 ( 1-4 )   132 - 142   1996.7

Vicinal and on-axis surfaces of 6H-SiC(0001) thin films observed by scanning tunneling microscopy Reviewed

Satoru Tanaka, R. Scott Kern, Robert F. Davis, John F. Wendelken, Jun Xu

Surface Science   350 ( 1-3 )   247 - 253   1996.4

Defect formation during hetero-epitaxial growth of aluminum nitride thin films on 6H-silicon carbide by gas-source molecular beam epitaxy Reviewed

Satoru Tanaka, R. Scott Kern, James Bentley, Robert F. Davis

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   35 ( 3 )   1641 - 1647   1996.3

Defect formation during hetero-epitaxial growth of aluminum nitride thin films on 6H-Silicon carbide by gas-source molecular beam epitaxy Reviewed

S Tanaka, RS Kern, J Bentley, RF Davis

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   35 ( 3 )   1641 - 1647   1996.3

Microstructural evolution and defect formation during the initial stages of the growth of silicon carbide and aluminum nitride on α(6H) -SiC(0001) substrates Reviewed

163 ( 1-2 )   93 - 99   1996.1

Issues and examples regarding growth of AlN, GaN and AlxGa1-xN thin films via OMVPE and gas source MBE Reviewed

Robert F. Davis, T. W. Weeks, M. D. Bremser, Tanaka Satoru, R. S. Kern, Z. Sitar, K. S. Ailey, W. G. Perry, C. Wang

Unknown Journal   395   3 - 13   1996

Initial stage of aluminum nitride film growth on 6H-silicon carbide< by plasma-assisted, gas-source molecular beam epitaxy Reviewed

Tanaka Satoru, R. Scott Kern, Robert F. Davis

Applied Physics Letters   1995.12

INITIAL-STAGE OF ALUMINUM NITRIDE FILM GROWTH ON 6H-SILICON CARBIDE BY PLASMA-ASSISTED, GAS-SOURCE MOLECULAR-BEAM EPITAXY Reviewed

S TANAKA, RS KERN, RF DAVIS

APPLIED PHYSICS LETTERS   66 ( 1 )   37 - 39   1995.1

Effects of gas flow ratio on silicon carbide thin film growth mode and polytype formation during gas-source molecular beam epitaxy Reviewed

Satoru Tanaka, R. Scott Kern, Robert F. Davis

Applied Physics Letters   65 ( 22 )   2851 - 2853   1994.12

Initial stages of growth of thin films of III-V nitrides and silicon carbide polytypes by molecular beam epitaxy Reviewed

Robert F. Davis, K. S. Ailey, R. S. Kern, D. J. Kester, Z. Sitar, L. Smith, S. Tanaka, C. Wang

Proceedings of the 1994 MRS Spring Meeting Materials Research Society Symposium - Proceedings   339   351 - 362   1994.1

Aluminum nitride/silicon carbide multilayer heterostructure produced by plasma-assisted, gas-source molecular beam epitaxy Reviewed

L. B. Rowland, R. S. Kern, S. Tanaka, Robert F. Davis

Applied Physics Letters   62 ( 25 )   3333 - 3335   1993.12

Epitaxial growth of AIN by plasma-assisted, gas-source molecular beam epitaxy Reviewed

L. B. Rowland, R. S. Kern, S. Tanaka, Robert F. Davis

Journal of Materials Research   8 ( 9 )   2310 - 2314   1993.10

Solid solutions of AIN and SiC grown by plasma-assisted, gas-source molecular beam epitaxy Reviewed

R. S. Kern, S. Tanaka, R. F. Davis

Journal of Materials Research   8 ( 7 )   1477 - 1480   1993.7

Layer-by-layer growth of SiC at low temperatures Reviewed

J. J. Sumakeris, L. B. Rowland, R. S. Kern, S. Tanaka, R. F. Davis

Thin Solid Films   225 ( 1-2 )   219 - 224   1993.3

Gas-source molecular beam epitaxy of monocrystalline β-SiC on vicinal α(6H)-SiC Reviewed

8 ( 11 )   2753 - 2756   1993.1

MBE法による傾斜SiC表面上へのグラフェンナノリボンの成長 Invited

第33回電子材料シンポジウム(30th Electronic Materials Symposium)  2014.7 

SiC表面ナノ構造上のグラフェンナノリボンの形成と電子物性 Invited

田中 悟

日本物理学会第６6回年次大会領域9，領域7合同シンポジウム 主題：表面界面状態の理解と触媒反応・電子デバイスへの新展開  2014.3 

グラフェンナノ構造の形成と構造ー電子物性相関 Invited

田中　悟

早稲田大学各務記念材料技術研究所オープンセミナー  2011.10 

Formation of graphene nanostructures on vicinal SiC surfaces Invited International conference

S. Tanaka

2011 International Conference on Solid State Devices and Materials  2011.9 

Formation of epitaxial grapehene nanostructures and correlation with electronic structures Invited

S. Tanaka

2011.7 

Graphene nanoribbons on vicinal SiC surfaces Invited International conference

S. Tanaka

2011.10 

SiCナノ表面構造とヘテロエピタキシー Invited

田中 悟

真空・表面科学合同講演会  2010.11 

Self-organized graphene nanoribbons on vicinal SiC surfaces Invited International conference

S. Tanaka, K. Morita, N. Uehara, K. Nakatsuji, T. Yoshimura, F. Komori

International Symposium on Graphene Dvices (ISGD) 2010  2010.10 

Growth mechanisms of graphene on vicinal SiC surfaces International conference

Satoru Tanaka, Kouhei Morita, Naoya Uehara, Hiroki Hibino

European Materials Society (E-MRS) Spring Meeting  2010.6 

SiCナノ表面上へのエピタキシャルグラフェンの形成と評価 Invited

田中　悟

日本物理学会第６５回年次大会領域7，領域4，領域6，領域9合同シンポジウム 主題：グラフェンの生成・評価と物性 －最前線と展望－  2010.3 

Formation of graphene nanowires on vicinal SiC surfaces International conference

Srey Chenda, Satoru Tanaka

MRS 2009 Fall Meeting  2009.12 

A breakthrough toward wafer-size bilayer graphene transfer International conference

Akihiro Hashimoto, Hiromitsu Tearsaki, Kouhei Morita, Satoru Tanaka and Hiroki Hibino

2009 MRS Fall Meeting  2009.12 

Spatially uniform-thick bi-layer graphene on vicinal SiC surfaces International conference

Kohei Morita, Hiroki Hibino, Kan Nakatsuji, Fumio Komori, Seigi Mizuno, Satoru Tanaka

ICSCRM2009  2009.10 

A breakthrough toward wafer-size bilayer graphene transfer International conference

Akihiro Hashimoto, Hiromitsu Tearsaki, Kouhei Morita, Satoru Tanaka and Hiroki Hibino

ICSCRM2009  2009.10 

Rippled Graphene Nanostructures on vicinal SiC surfaces International conference

Yoshihito Hagihara, Kan Nakatsuji, Fumio Komori, Satoru Tanaka

ICSCRM2009  2009.10 

微傾斜SiC表面上のナノグラフェン構造の形成と物性 Invited

田中 悟

東北大学電気通信研究所・共同プロジェクト研究会「 次世代デバイス応用を企図したグラフェン形成機構の解明及び制御」  2009.10 

SiC表面上へのエピタキシャルグラフェンの形成と結晶構造 Invited

田中　悟

日本物理学会第１９回格子欠陥シンポジウム  2009.9 

ＳｉＣナノ周期表面上のグラフェンナノ構造 Invited

田中 悟，森田康平，萩原好人，スレイ チェンダ

電気学会光量子デバイス研究会  2009.9 

Graphene formation on vicinal SiC surfaces Invited International conference

S. Tanaka, K. Motita, S. Chenda, Y. Hagihara, K. Hayashi, S. Mizuno, K. Nakatsuji, F. Komori

2009.2 

Formation of graphene nanowires on vicinal SiC surfaces International conference

Satoru Tanaka, Srey Chenda

MRS 2008 Fall Meeting  2008.12 

Uniform thickness distribution of graphene layers on vicinal SiC surfaces International conference

S. Tanaka, K. Hayashi, K. Motita, S. Chenda, Y. Hagihara, S. Mizuno, H. Hibino, T. Shirasawa, K. Nakatsuji, F. Komori

ISGD2008 (2008 International Symposium on Graphene Devices)  2008.11 

LEED Analysis of Stacking Sequence of Graphene Layers Formed on Vicinal SiC(0001) Surface International conference

K. Hayashi, ,K. Morita. M. Suzuki, S. Mizuno, S. Tanaka, and H. Tochihara

International Symposium on Surface Science and Nanotechnology (ISSS-5)  2008.11 

SiCナノ表面と表面自己改質によるヘテロ構造の形成 Invited

田中　悟

2008.11 

Epitaxial SiO/SiN superstructure on 6H-SiC surface

Tetsuroh Shirasawa, Kenjiro Hayashi, Seigi Mizuno, Hiroshi Tochihara, Satoru Tanaka

2007.7 

Transfer of Large Area Graphene Sheets from Carbonized 6H-SiC by a Direct Bonding Technique International conference

Akihiro Hashimoto, Kohsuke Iwao, Satoru Tanaka and Akio Yamamoto

MRS 2007 Fall Meeting  2007.11 

Self-ordering of surface nanofacets on vicinal 4H-SiC(0001) International conference

Satoru Tanaka, Masahiro Fujii

Materials Research Society Fall Meeting  2007.11 

A New Formation Method of Large Area Graphene on SiO2/Si Substrate International conference

Akihiro Hashimoto, Kohsuke Iwao, Satoru Tanaka and Akio Yamamoto

The 18th European Diamond and Related Materials  2007.9 

Van der Waals Epitaxy of Solid Fullerene on Graphene Sheet International conference

Akihiro Hashimoto, Kohsuke Iwao, Satoru Tanaka and Akio Yamamoto

The 18th European Diamond and Related Materials  2007.9 

Self-ordering of surface nano-facets on vicinal 4H-SiC International conference

Satoru Tanaka, Masahiro Fujii

ECSCD9  2007.9 

Initial step-flow growth of GaN on Ga-adsorbed SiC nanofacet surfaces International conference

Masato Ebihara, Satoru Tanaka and Ikuo Suemune

2006.11 

SiC上グラフェンバッファー層の水素インターカレーションによる準安定構造

#梶原 悠矢,#田中 夏帆，ビシコフスキー アントン，田中 悟

応用物理学会春季大会  2024.3 

SiC m面上1次元周期リップルグラフェンの電子状態

@飯盛拓嗣, #今村均, @片野達貴, @Seo Insung, @間瀬一彦, Anton Visikovskiy, 田中悟, @小森文夫, @中辻寛

日本物理学会 2024年春季大会  2024.3 

4H-SiC m面上1次元リップルグラフェンの作製と構造評価

#今村均, Anton Visikovskiy, @碇智徳, @飯盛拓嗣, @中辻寛, @小森文夫, 田中悟

日本物理学会 2024年春季大会  2024.3 

微傾斜 SiC(0001)上の転写グラフェンの歪み状態

#奥田茉央，アントン ビシコフスキー, @増野谷 拓実, @近藤 さらな, @神田 晶申,田中 悟

第８４回応用物理学会秋季大会  2023.9 

SiC バッファー層上への転写グラフェンの構造及びラマン特性

○#田嶋 哲平，#今村 均，ビシコフスキー アントン, 田中 悟

第８４回応用物理学会秋季大会  2023.9 

SiC 上 CVD グラフェンバッファー層の水素インターカレーション

#田中 夏帆，#今村 均, ビシコフスキー アントン，田中 悟

第８４回応用物理学会秋季大会  2023.9 

転写グラフェン/SiC(0001)の界面構造

#光平 知民，#今村 均，アントン ビシコフスキー，田中 悟

第８４回応用物理学会秋季大会  2023.9 

ナノインデンテーション法を用いた 1 次元周期歪みグラフェンの作製

#吉武 一彦，アントン ビシコフスキー, 田中 悟

第８４回応用物理学会秋季大会  2023.9 

4H-SiC-m面上の周期リップルグラフェン

#今村均，ビシコフスキー アントン@碇智徳, @藤澤 唯太, @小畑 由紀子, @岡田 佳憲,田中 悟

第８４回応用物理学会秋季大会  2023.9 

4H-SiC m面の1次元周期構造

#今村 均，ビシコフスキー アントン，@碇 智徳, @藤澤 唯太, @岡田 佳憲, 田中 悟

第８４回応用物理学会秋季大会  2023.9 

Flat bands in periodically strained graphene

Anton Visikovskiy, Satoru Tanaka

2023.9 

1度以下のツイスト2層グラフェンの電子状態

飯盛拓嗣, #今村均, 宮町俊生, 中辻寛, 北村未歩, 堀場弘司, 間瀬一彦, Anton Visikovskiy, 田中悟, 小森文夫

日本物理学会 2023年春季大会  2023.3 

4H-SiC m面上のグラフェン周期リップル構造

#今村 均、#田中 夏帆、飯盛 拓嗣、中辻 寛、宮町 俊生、小森 文夫、ビシコフスキー アントン、田中 悟

第83回 応用物理学会 秋季学術講演会  2022.9 

Twisted bilayer graphene with clean interface by direct transfer of CVD graphene Invited

2020.9 

大面積ツイスト2層グラフェンの作製と電子状態評価 Invited

田中悟

日本物理学会 2020年秋季大会  2020.9 

Periodically rippled graphene formed on 4H–SiC m-plane surface International conference

2019.8 

Moiré induced electronic structure of twisted bilayer graphene International conference

2019.8 

Graphene nanoribbons on macro-facets of vicinal 6H-SiC(0001) International conference

#Kohei Fukuma, Anton Visikovskiy, Takashi Kajiwara, @Takushi Iimori, @Fumio Komori, Satoru Tanaka

International Symposium on Epitaxial Graphene 2019 (ISEG2019)  2019.8 

IV族三角格子原子層の成長と電子物性 Invited

田中　悟

第２回陽電子回折研究会  2018.2 

Graphene nanoribbons grown on facets resulted from macro-step bunching on vicinal SiC surfaces International conference

#Kohei Fukuma, Anton Visikovskiy, #Shingo Hayashi, Takashi Kajiwara,@Takushi Iimori,@Fumio Komori, Satoru Tanaka

International Symposium on Epitaxial Graphene 2017 (ISEG2017)  2017.11 

Graphene transfer on periodic SiC nanosurfaces International conference

Takashi Kajiwara, Anton Visikovskiy,@Takushi Iimori,@Toshio Miyamachi,@Fumio Komori,Satoru Tanaka

International Symposium on Epitaxial Graphene 2017 (ISEG2017)  2017.11 

Sn atomic layer by intercalation at graphene / SiC interface International conference

#Shingo Hayashi, Takashi Kajiwara, Anton Visikovskiy, @Takushi Iimori, @Tetsuro Shirasawa, @Kan Nakastuji, @Toshio Miyamachi, @Syuhei Nakashima, @Kazuhiko Mase, @Fumio Komori, Satoru Tanaka

International Symposium on Epitaxial Graphene 2017 (ISEG2017)  2017.11 

Sn and Pb triangular lattice atomic layers on SiC(0001) and at graphene/SiC(0001) interface International conference

Anton Visikovskiy,#Shingo Hayashi,@Fumio Komori, Satoru Tanaka

International Symposium on Epitaxial Graphene 2017 (ISEG2017)  2017.11 

SiC(0001)上のIV族原子層膜の形成 Invited

#林　真吾，田中　悟

陽電子回折研究会  2017.1 

SiCナノ表面構造制御によるグラフェンナノ構造化 Invited

田中　悟，@小森　文夫，@神田　晶申

東北大通研「炭化珪素系ヘテロ構造を用いた物質創成と応用展開」 第２回研究会  2017.1 

Anisotropic growth of graphene on cleaved SiC(1-100) surfaces International conference

#T. Takasaki,# J. Shioji, T. Kajiwara, A. Visikovskiy, S. Tanaka

18th International Conference of Crystal Growth and Epitaxy (ICCGE18)  2016.8 

Graphene/SiC(0001) interface variety induced by Si intercalation International conference

A. Visikovskiy, #S.-I. Kimoto, T. Kajiwara, @M. Yoshimura, @F. Komori, S. Tanaka

18th International Conference of Crystal Growth and Epitaxy (ICCGE18)  2016.8 

Graphene lateral superlattices formed on SiC facets - semiconducting and ballistic transport - International conference

Tanaka Satoru, Takashi Kajiwara, ANTON VISIKOVSKIY

2015 MRS Fall Meeting  2015.11 

Sub 2‐dimensional graphene nanostructures formed on SiC(1‐108) facets ‐ semiconducting and ballistic transport International conference

2015.10 

Quasi-one-dimensional graphene nanostructure on corrugated SiC surfaces International conference

Tanaka Satoru

21st International Conference on Electronic Properties of Two-Dimensional Systems 17th International Conference on Modulated Semiconductor Structures  2015.7 

Semiconducting characteristics in self-ordered quasi-one dimensional graphene lateral superlattice International conference

Tanaka Satoru

NT-15  2015.6 

One-dimensional Si adatom induced nanoribbon formation on SiC surface during molecular beam epitaxy International conference

Tanaka Satoru

IUMRS-IECM 2012  2014.8 

Intermediate C-Rich (Sqrt [3] x Sqrt [3]) R30 Structure Preceding Graphene Buffer Layer Formation on SiC (0001) International conference

Shingo Hayashi, Takashi Kajiwara, ANTON VISIKOVSKIY, Tanaka Satoru

ICSCRM2013  2013.10 

Silicon Intercalation at the SiC-Graphene Interface International conference

Shin-ichi Kimoto, Takashi Kajiwara, ANTON VISIKOVSKIY, Tanaka Satoru

ICSCRM2013  2013.9 

Bandgap Opening on Graphene Nanoribbons Grown on Vicinal 6H- and 4H-SiC Surfaces by Molecular Beam Epitaxy International conference

Tanaka Satoru, Takashi Kajiwara, ANTON VISIKOVSKIY

ICSCRM2013  2013.9 

Growth of graphene nanoribbon arrays on　vicinal SiC surfaces by molecular beam epitaxy Invited International conference

2013.9 

グラフェンナノ構造形成と物性相関 Invited

日本学術振興会第167委員会  2013.4 

Epitaxial Graphene Nanoribbons Grown by Molecular Beam Epitaxy International conference

Takashi Kajiwara, Tanaka Satoru

2012 MRS Fall Meeting  2012.11 

Graphene Growth on SiC Nanofacet Surfaces by Chemical Vapor Deposition International conference

Yoshihito Hagihara, Tanaka Satoru

2012 MRS Fall Meeting  2012.11 

Raman Spectroscopy of Epitaxial Graphene Nanoribbons International conference

2012 MRS Fall Meeting  2012.11 

Graphene nanoribbons grown by molecular beam epitaxy Invited International conference

Tanaka Satoru

IUMRS-IECM 2012  2012.9 

Graphene nanostructures on vicinal SiC surfaces International conference

Takashi Kajiwara, Yusuke Kurisu, and Satoru Tanaka

Materials Research Society Fall Meeting 2011  2011.11 

GROWTH-MECHANISM OF SILICON-CARBIDE FILMS BY CHEMICAL VAPOR-DEPOSITION BELOW 1273-K

S TANAKA, H KOMIYAMA

JOURNAL OF THE AMERICAN CERAMIC SOCIETY  1990.10 

CHEMICAL AND STRUCTURAL-ANALYSES OF THE TITANIUM NITRIDE/ALPHA (6H)-SILICON CARBIDE INTERFACE

RC GLASS, LM SPELLMAN, S TANAKA, RF DAVIS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS  1992.7 

LAYER-BY-LAYER GROWTH OF SIC AT LOW-TEMPERATURES

JJ SUMAKERIS, LB ROWLAND, RS KERN, S TANAKA, RF DAVIS

THIN SOLID FILMS  1993.3 

ALUMINUM NITRIDE SILICON-CARBIDE MULTILAYER HETEROSTRUCTURE PRODUCED BY PLASMA-ASSISTED, GAS-SOURCE MOLECULAR-BEAM EPITAXY

LB ROWLAND, RS KERN, S TANAKA, RF DAVIS

APPLIED PHYSICS LETTERS  1993.6 

SOLID-SOLUTIONS OF ALN AND SIC GROWN BY PLASMA-ASSISTED, GAS-SOURCE MOLECULAR-BEAM EPITAXY

RS KERN, LB ROWLAND, S TANAKA, RF DAVIS

JOURNAL OF MATERIALS RESEARCH  1993.7 

EPITAXIAL-GROWTH OF ALN BY PLASMA-ASSISTED, GAS-SOURCE MOLECULAR-BEAM EPITAXY

LB ROWLAND, RS KERN, S TANAKA, RF DAVIS

JOURNAL OF MATERIALS RESEARCH  1993.9 

GAS-SOURCE MOLECULAR-BEAM EPITAXY OF MONOCRYSTALLINE BETA-SIC ON VICINAL ALPHA(6H)-SIC

LB ROWLAND, RS KERN, S TANAKA, RF DAVIS

JOURNAL OF MATERIALS RESEARCH  1993.11 

EFFECTS OF GAS-FLOW RATIO ON SILICON-CARBIDE THIN-FILM GROWTH MODE AND POLYTYPE FORMATION DURING GAS-SOURCE MOLECULAR-BEAM EPITAXY

S TANAKA, RS KERN, RF DAVIS

APPLIED PHYSICS LETTERS  1994.11 

Vicinal and on-axis surfaces of 6H-SiC(0001) thin films observed by scanning tunneling microscopy

S Tanaka, RS Kern, RF Davis, JF Wendelken, J Xu

SURFACE SCIENCE  1996.4 

Microstructural evolution and defect formation during the initial stages of the growth of silicon carbide and aluminum nitride on alpha(6H)-SiC(0001) substrates

RF Davis, S Tanaka, RS Kern

JOURNAL OF CRYSTAL GROWTH  1996.5 

Growth of SiC and III-V nitride thin films via gas-source molecular beam epitaxy and their characterization

RF Davis, S Tanaka, LB Rowland, RS Kern, Z Sitar, SK Ailey, C Wang

JOURNAL OF CRYSTAL GROWTH  1996.7 

Electrical characteristics of metal/AlN/n-type 6H-SiC(0001) heterostructures

MO Aboelfotoh, RS Kern, S Tanaka, RF Davis, CI Harris

APPLIED PHYSICS LETTERS  1996.11 

Self-assembling GaN quantum dots on AlxGa1-xN surfaces using a surfactant

S Tanaka, S Iwai, Y Aoyagi

APPLIED PHYSICS LETTERS  1996.12 

Gas-source molecular beam epitaxy of III-V nitrides

RF Davis, MJ Paisley, Z Sitar, DJ Kester, KS Ailey, K Linthicum, LB Rowland, S Tanaka, RS Kern

JOURNAL OF CRYSTAL GROWTH  1997.6 

Stimulated emission from optically pumped GaN quantum dots

S Tanaka, H Hirayama, Y Aoyagi, Y Narukawa, Y Kawakami, S Fujita, S Fujita

APPLIED PHYSICS LETTERS  1997.9 

The formation of GaN dots on AlxGa1-xN surfaces using Si in gas-source molecular beam epitaxy

XQ Shen, S Tanaka, S Iwai, Y Aoyagi

APPLIED PHYSICS LETTERS  1998.1 

Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces

H Hirayama, S Tanaka, P Ramvall, Y Aoyagi

APPLIED PHYSICS LETTERS  1998.4 

Real-time observations of the GaN dot formation by controlling growth mode on the AlGaN surface in gas-source molecular beam epitaxy

XQ Shen, S Tanaka, S Iwai, Y Aoyagi

JOURNAL OF CRYSTAL GROWTH  1998.6 

Influence of surface V/III ratio on the film quality during the GaN growth in gas-source molecular beam epitaxy

XQ Shen, S Tanaka, S Iwai, Y Aoyagi

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS  1998.6 

Observation of confinement-dependent exciton binding energy of GaN quantum dots

P Ramvall, S Tanaka, S Nomura, P Riblet, Y Aoyagi

APPLIED PHYSICS LETTERS  1998.8 

Optical characterization of the "E2" deep level in GaN

P Hacke, P Ramvall, S Tanaka, Y Aoyagi, A Kuramata, K Horino, H Munekata

APPLIED PHYSICS LETTERS  1999.1 

Semiconductor photonic dots: Visible wavelength-sized optical resonators

Suemune, I, A Ueta, A Avramescu, S Tanaka, H Kumano, K Uesugi

APPLIED PHYSICS LETTERS  1999.4 

Cathodoluminescence spectroscopy and imaging of individual GaN dots

A Petersson, A Gustafsson, L Samuelson, S Tanaka, Y Aoyagi

APPLIED PHYSICS LETTERS  1999.6 

Growth and luminescence properties of self-organized ZnSe quantum dots

T Tawara, S Tanaka, H Kumano, Suemune, I

APPLIED PHYSICS LETTERS  1999.7 

Fabrication of self-assembling InGaN and AlGaN quantum dots on AlGaN surfaces using anti-surfactant (vol 47, pg 251, 1999)

H Hirayama, S Tanaka, Y Aoyagi

MICROELECTRONIC ENGINEERING  1999.12 

Optical properties of GaN quantum dots

P Ramvall, P Riblet, S Nomura, Y Aoyagi, S Tanaka

JOURNAL OF APPLIED PHYSICS  2000.4 

MOVPE growth of ZnSe/ZnMgS distributed Bragg reflectors with high refractive-index contrast

T Tawara, Suemune, I, S Tanaka

JOURNAL OF CRYSTAL GROWTH  2000.6 

アンチサーファクタントによるGaN層の低転位化

武内道一, 平山秀樹, 青柳克信, 田中悟

まてりあ  2001.12 

Self-ordering of nanofacets on vicinal SiC surfaces

H Nakagawa, S Tanaka, Suemune, I

PHYSICAL REVIEW LETTERS  2003.11 

SiC表面上のエピタキシャルSiO/SiN超構造の作製

田中　悟，藤井　政弘，白澤　徹郎，林　賢二郎，水野　清義，栃原　浩

2006年SiC研究会  2006.11 

日本表面真空学会

日本表面真空学会

日本物理学会

応用物理学会

Organizer   Domestic

2009.4 - 2012.3   

応用物理学会   薄膜表面物理分科会幹事   Domestic

2009.4 - 2012.3   

Steering committee member   Domestic

2007.4 - 2013.3   

国際科学研究費委員会専門委員

Role(s)： Review, evaluation

日本学術振興会  2015.10 - 2016.9

科学研究費委員会専門委員

Role(s)： Review, evaluation

日本学術振興会  2015.10 - 2015.3

シンポジウムオーガナイザー，論文委員 International contribution

2012.9 - 2013.9

座長（Chairmanship）

日本物理学会平成２２年度秋季大会  （ 大阪 ） 2010.9 - 2010.3

座長（Chairmanship）

日本物理学会第６５回年次大会  （ 岡山 ） 2010.3

科学研究費委員会専門委員

Role(s)： Review, evaluation

日本学術振興会  2009.11 - 2010.2

実行委員 International contribution

（ 大津（滋賀） ） 2007.10 - 2008.10

実行委員 International contribution

（ 京都 ） 2006.10 - Present

日本学術振興会科学技術研究費審査員

Role(s)： Review, evaluation

日本学術振興会  2005.12 - 2006.3

m面SiC基板の表面平坦化に関する研究

2019.4 - 2019.3

共同研究

回転角制御モアレ積層系2層グラフェンの作製と物性評価

Grant number：19H02602  2019 - 2022

日本学術振興会  科学研究費助成事業  基盤研究(B)

田中 悟, 神田 晶申, 小森 文夫, Anton V.Visikovs

SiC表面へのグラフェン転写によるナノ構造形成と電子状態制御

2018.4 - 2019.3

共同研究

SiC表面へのグラフェン転写によるナノ構造形成と電子状態制御

2018 - 2020

NTT戦略リソース

m面SiC基板の表面平坦化に関する研究

2017.4 - 2018.3

共同研究

グラフェン/ SiC 界 面への結晶インターカ レーション

2017 - 2019

科学研究費助成事業  萌芽研究

SiC表面構造制御と原子層薄膜への展開

2017 - 2019

日本学術振興会  科学研究費助成事業  基盤研究(A)

グラフェン研究のため

2017

m面SiC基板の表面平坦化に関する研究

2016.4 - 2017.3

共同研究

サブ２Dナノカーボンの創製とデバイス応用

2016 - 2020

戦略的創造研究推進事業 (文部科学省)

次世代半導体表面構造を高品質形成制御する超小型専用装置の開発

2016 - 2017

兵庫県COE

グラフェン研究のため

2016

SiC基板の表面平坦化に関する研究

2015.10 - 2016.3

共同研究

グラフェン研究

2015

SiC基板の表面構造制御とデバイス適用に関する研究

2014.10 - 2014.3

共同研究

エピタキシャル原子層ナノデバイス材料の創製

2014 - 2019

戦略的創造研究推進事業 (文部科学省)

ヘテロエピタキシャルグラフェンに関する研究

2013.4 - 2014.3

共同研究

ヘテロエピタキシャルグラフェンに関する研究

2012.4 - 2013.3

共同研究

グラフェンナノ構造化による新奇物性の創成と応用

2011 - 2016

科学研究費助成事業  CREST

グラフェン研究

2010

SiC表面の電子ビーム回折による評価

2009.10 - 2010.6

共同研究

傾斜SiC基板上のグラフェン成長に関する研究

2009.4 - 2010.3

共同研究

表面電子励起状態および吸着子のダイナミクス

2009 - 2011

科学研究費助成事業  一般研究(A)

ウェハスケール表面構造制御を用いた単結晶グラフェン基板創製

2009 - 2011

科学研究費助成事業  一般研究(A)

シリコンカーバイド上の酸窒化シリコン膜とその上に形成する薄膜の構造解析

2008 - 2010

科学研究費助成事業  一般研究(B)

次世代エレクトロニクスのためのナノ周期表面構造科学

2007 - 2012

戦略的創造研究推進事業 (文部科学省)

SiC表面自己改質によるグラフェンの形成

2007

JSTシーズ発掘試験研究

自己組織化ナノ表面を活用した高品質SiC基板の実用化研究

2006 - 2007

JSTシーズ試験研究

原子レベル表面状態制御による低欠陥窒化物半導体のヘテロエピタキシー

2002 - 2004

科学研究費助成事業  一般研究(A)

III族窒化物半導体量子ドットLED・レーザの開発研究

2001 - 2003

科学研究費助成事業  一般研究(B)

III族系窒化物半導体量子ドットの成長機構の解明

1997 - 1998

科学研究費助成事業  奨励研究(A)

Solid State Physics

2023.10 - 2024.3   Second semester

応用物性論

2023.10 - 2024.3   Second semester

熱力学基礎

2023.10 - 2023.12   Fall quarter

熱力学基礎

2023.10 - 2023.12   Fall quarter

固体物理学Ⅰ

2023.6 - 2023.8   Summer quarter

固体物理学Ⅰ

2023.6 - 2023.8   Summer quarter

応用物理学特別講義Ⅱ

2023.4 - 2024.3   Full year

応用物理学研究計画演習 C

2023.4 - 2024.3   Full year

応用物理学実験 C

2023.4 - 2024.3   Full year

応用物理学発表演習 C

2023.4 - 2024.3   Full year

応用物理学講究 C

2023.4 - 2024.3   Full year

Colloquium on Applied Physics C

2023.4 - 2024.3   Full year

産学連携演習Ⅰ

2023.4 - 2024.3   Full year

産学連携演習Ⅱ

2023.4 - 2024.3   Full year

産学連携演習Ⅲ

2023.4 - 2024.3   Full year

応用物理学研究計画演習 C

2023.4 - 2024.3   Full year

応用物理学実験 C

2023.4 - 2024.3   Full year

応用物理学講究 C

2023.4 - 2024.3   Full year

応用物理学Ⅱ

2023.4 - 2023.9   First semester

応用物理学Ⅲ

2023.4 - 2023.6   Spring quarter

熱力学基礎

2022.12 - 2023.2   Winter quarter