Updated on 2024/10/08

Information

 

写真a

 
KOGA KAZUNORI
 
Organization
Faculty of Information Science and Electrical Engineering Department of Electronics Professor
Center of Plasma Nono-interface Engineering (Concurrent)
School of Engineering Department of Electrical Engineering and Computer Science(Concurrent)
Graduate School of Information Science and Electrical Engineering Department of Electrical and Electronic Engineering(Concurrent)
Joint Graduate School of Mathematics for Innovation (Concurrent)
Title
Professor
Contact information
メールアドレス
Profile
1)研究活動概要  半導体産業などの先端産業を支える基盤技術の中にプラズマプロセスがある。プラズマプロセスの発展が半導体産業の発展つながる事から、プラズマプロセスの高精度化が様々角度から進められている。当研究室ではプラズマプロセスの高精度技術の開発と新たな応用展開の開拓を主な課題として、次のような研究を行っている. ・高品質半導体/炭素薄膜プロセスの創成 ・プラズマのバイオ応用研究 ・高品質半導体/炭素薄膜プロセスの創成  ドライプロセスであるプラズマは、不純物の少ない薄膜堆積法として、現在半導体デバイスや太陽光発電をはじめとする様々な分野で活用されている。次世代デバイスの実現にはプラズマプロセスの高性能化は必須であり、当研究室では、プラズマプロセスの基礎研究と製造技術の開発に世界に先駆けて取り組んでいる。  その関連研究として、プラズマ応用計測技術の開発やプラズマで発生するナノ粒子用いたナノ構造デバイスの創製などを行っている。 ・プラズマのバイオ応用研究  プラズマで発生する化学的活性な分子をもちいて生体応答を制御する研究が世界中で活発に研究されている。当研究室では、植物を対象にプラズマ照射による成長促進機構の解明と農業応用を検討している。種子への短時間照射による、成長促進を発見ししている。  その他、プラズマプロセスやプラズマエッチングに深く関与するプラズマシースに励起される非線形現象の研究や、プラズマプロセスの情報学的検討なども行っている。 2)教育活動概要  学部講義・演習と大学院生向け講義を担当している。
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Research Areas

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials

  • Nanotechnology/Materials / Thin film/surface and interfacial physical properties

  • Energy Engineering / Fundamental plasma

  • Energy Engineering / Applied plasma science

Degree

  • Doctor of Science

Research History

  • - Kyushu University, Research Associate.   

    1999

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  • - 九州大学 助手   

    1999

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Education

  • Kyushu University   Graduate School, Division of Integrated Science and Engineering  

    - 1999

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  • Kyushu University   総合理工学研究科   高エネルギー理工学

    - 1999

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    Country:Japan

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  • Kyushu University   Faculty of Science  

    - 1994

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  • Kyushu University   School of Sciences   物理学

    - 1994

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    Country:Japan

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Research Interests・Research Keywords

  • Research theme: plasma physics

    Keyword: plasma physics

    Research period: 2024

  • Research theme: plasma process

    Keyword: plasma process

    Research period: 2024

  • Research theme: plasma nanotechnology

    Keyword: plasma nanotechnology

    Research period: 2024

  • Research theme: plasma agriculture

    Keyword: plasma agriculture

    Research period: 2024

  • Research theme: Forth generation plasma-bio technology

    Keyword: cell activation control

    Research period: 2009.4

  • Research theme: Development of deposition of low-k dielectrics for next generation LSI

    Keyword: low-k dielectrics

    Research period: 2002.1

  • Research theme: Study on particle formation mechanism due to interaction between plasma and carbon wall

    Keyword: plasma wall interaction, nuclear fusion

    Research period: 2001.1

  • Research theme: Control of Film Characteristics of a-C:H using Nanoparticles

    Keyword: amorphous carbon

    Research period: 1999.4

  • Research theme: Development of Cu interconnect in next generation LSI

    Keyword: Cu interconnect

    Research period: 1999.4

  • Research theme: Study on high rate deposition of high quality materials for solar cells

    Keyword: amorphous silicon

    Research period: 1999.4

  • Research theme: Study on formation mechanism and control of particles in processing plasmas

    Keyword: processing plasma, particle

    Research period: 1999.4

Awards

  • 第21回プラズマ材料科学賞奨励部門賞

    2020.2   プラズマ材料科学賞選考委員会  

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    反応性プラズマにおけるナノ粒子成長揺らぎの制御に関する研究

  • 第14回プラズマエレクトロニクス賞

    2016.3   応用物理学会プラズマエレクトロニクス分科会  

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    "Synthesis and characterization of ZnInON semiconductor: a ZnO-based compound with tunable band gap" N. Itagaki, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani

  • ICMAP2014 Best Poster Presentation Award

    2014.7   International Conference of Microelectronics and Plasma Technology 2014 (ICMAP2014)  

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    "Atmospheric Pressure DBD Plasma Irradiation to Seeds of Glycine max (L.)Merrill and Vigna radiata" T. Amano, T. Sarinont, K. Koga, and M. Shiratani

  • ICMAP2014 Best Poster Presentation Award

    2013.8   International Conference of Microelectronics ans Plasma Technology 2014 (ICMAP2014)  

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    "Atmospheric Pressure DBD Plasma Irradiation to Seeds of Glycine max (L.)Merrill and Vigna radiata" T. Amano, T. Sarinont, K. Koga, and M. Shiratani

  • The 9th Asian-European International Conference of Plasma Surface Engineering(AEPSE2013)/ Outstanding Poster Award

    2013.8   The 9th Asian-European International Conference on Plasma Surface Engineering  

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    "Time evolution of spatial profile of nanoparticle amount in reactive plasmas" Y. Morita, S. Iwashita, D. Yamashita, G. Uchida, K. Kamataki, H. Seo, N. Itagaki, K. Koga and M. Shiratani

  • ISSP2013 Best Poster Award

    2013.7   12th International Symposium on Sputtering & Plasma Processes  

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    "Sputter Deposition of Single Crystal ZnO Films on 18% Lattice mismatched c-Al2O3 Substrates via Nitrogen Mediated Crystallization" N. Itagaki, K. Kuwahara, I. Suhariadi, K. Oshikawa, K. Matsushima, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, and M. Shiratani

  • Advanced Plasma Application Award

    2012.10   11th Asia Pacific Conference on Plasma Science adn Technology (APCPST) & 25th Symposium on Plasma Science for Materials (SPSM)  

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    Zinc-Indium Oxynitride Thin Films for Multiple-Quantum–Well Solar Cells
    N. Itagaki, K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani

  • IUMRS-ICEM2012 "Young Scientist Awards: Silver Award Winners"

    2012.9   日本MRS  

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    "High Capacity Li Ion Battery Anodes Using Silicon Carbide Nanoparticles Produced by Double Multi-Hollow Discharge Plasma CVD"
    K. Kamataki, M. Shiratani, T. Ishihara, H. Nagano, Y. Morita, K. Kuwahara, G. Uchida, H. Seo, N. Itagaki, K. Koga

  • Best Presentation Award

    2012.3   ISPlasma2012  

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    Interaction between amplitude modulated reactive plasmas and nanoparitcles grown in the plasmas
    KUNIHIRO KAMATAKI, KAZUNORI KOGA, GIICHIRO UCHIDA, NAHO ITAGAKI, HYUNWOONG SEO AND MASAHARU SHIRATANI

  • Invited Presentation Award

    2008.6   Interfinish 2008 World Congress and Exposition  

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    "Deposition profile control of plasma CVD films on nano-patterned substrates" M. Shiratani, K. Koga

  • 応用物理学会第3回プラズマエレクトロニクス賞

    2005.3   応用物理学会プラズマエレクトロニクス分科会  

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    対象論文 “Cluster-suppressed plasma chemical vapor deposition method for high quality hydrgenated amorphous silicon films”, K. Koga, M. Kai, M. Shiratani, Y. Watanabe, and N. Shikatani, Japanese Journal of Applied Physics, Vol.41, pp. L168-170 (2002).

  • 第10回応用物理学会講演奨励賞

    2001.5   応用物理学会  

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    対象講演「クラスタ抑制プラズマCVD装置による高品質a-Si : H作製」
    (古閑一憲, 園田剛士,鹿谷昇,白谷正治,渡辺征夫)

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Papers

  • Comparison between Ar+CH4 Cathode and Anode Coupled Capacitively Coupled Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Carbon Films Reviewed International journal

    S. H. Hwang, R. Iwamoto, T. Okumura, K. Kamataki, N. Itagaki, K. Koga, T. Nakatani, M. Shiratani

    Thin Solid Films   729   2021.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2021.138701

  • Synthesis of Yb3+/Ho3+ co-doped Y2O3 nanoparticles and its application to dye sensitized solar cells Reviewed International journal

    F. L. Chawarambwa, T. E. Putri, K. Kamataki, M. Shiratani, K. Koga, N. Itagaki, D. Nakamura

    J. Mol. Struct.   1228   2021.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.molstruc.2020.129479

  • Alterations of DNA Methylation Caused by Cold Plasma Treatment Restore Delayed Germination of Heat-Stressed Rice (Oryza sativa L.) Seeds Reviewed International journal

    C. Suriyasak, K. Hatanaka, H. Tanaka, T. Okumura, D. Yamashita, P. Attri, K. Koga, M. Shiratani, N. Hamaoka, Y. Ishibashi

    ACS Agric. Sci. Technol.   1 ( 1 )   2021.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acsagscitech.0c00070

  • Impact of seed color and storage time on the radish seed germination and sprout growth in plasma agriculture Reviewed International journal

    P. Attri, K. Ishikawa, T. Okumura, K. Koga, M. Shiratani, V. Mildaziene

    Sci. Rep.   11 ( 1 )   2021.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/s41598-021-81175-x

  • Effects of Activated Carbon Counter Electrode On Bifacial Dye Sensitized Solar Cells (DSSCs) Reviewed International journal

    T. E. Putri, Y. Hao, F. L. Chawarambwa, H. Seo, Min-Kyu Son, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Mater. Sci. Forum   1016   2021.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.4028/www.scientific.net/MSF.1016.863

  • Possible impact of plasma oxidation on the structure of C-terminal domain of SARS-CoV-2 spike protein: a computational study Reviewed International journal

    P. Attri, K. Koga, M. Shiratani

    Jpn. J. Appl. Phys.   14 ( 2 )   2021.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1882-0786/abd717

  • Long-term response of Norway spruce to seed treatment with cold plasma: dependence of the effects on the genotype Reviewed International journal

    V. Sirgedaitė‐Šėžienė , V. Mildažienė, P. Žemaitis , A. Ivankov , K. Koga, M. Shiratani, V. Baliuckas

    Plasma Process Polym   2020.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/ppap.202000159

  • Size and flux of carbon nanoparticles synthesized by Ar+CH4 multi-hollow plasma chemical vapor deposition Reviewed International journal

    S. H. Hwang, T. Okumura, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Diam Relat Mater   109   2020.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.diamond.2020.108050

  • Graphene-Si3N4 nanocomposite blended polymer counter electrode for low-cost dye-sensitized solar cells Reviewed International journal

    F. L. Chawarambwa, T. E. Putri, M. K. Son, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Chem. Phys. Lett.   758   2020.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.cplett.2020.137920

  • Experimental identification of the reactive oxygen species transported into a liquid by plasma irradiation Reviewed International journal

    T. Kawasaki, K. Koga, M. Shiratani

    Jpn. J. Appl. Phys.   59 ( 11 )   2020.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/abc3a1

  • Synthesis of Yb3+/Ho3+ co-doped Y2O3 nanoparticles and its application to dye sensitized solar cells Reviewed International journal

    F. L. Chawarambwa, T. E. Putri, K. Kamataki, M. Shiratani, K. Koga, N. Itagaki, D. Nakamura

    J. Mol. Struct.   2020.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.molstruc.2020.129479

  • Impact of surface morphologies of substrates on the epitaxial growth of magnetron sputtered (ZnO)x(InN)1-x films Reviewed International journal

    R. Narishige, K. Kaneshima, D. Yamashita, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    Jpn. J. Appl. Phys.   60 ( SA )   2020.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/abba0c

  • Cold plasma treatment of sunflower seeds modulates plant-associated microbiome and stimulates root and lateral organ growth Reviewed International journal

    I. Tamošiūnė, D. Gelvonauskienė, P. Haimi, V. Mildažienė, K. Koga, M. Shiratani, D. Baniulis

    Front. Plant Sci.   11   2020.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.3389/fpls.2020.568924

  • Real-time monitoring of surface passivationof crystalline silicon during growth of amorphous and epitaxial silicon layer Reviewed International journal

    S. Nunomura, I. Sakata, H. Sakakita, K. Koga, M. Shiratani

    J. Appl. Phys.   128 ( 3 )   2020.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0011563

  • Cold plasma treatment of Arabidopsis thaliana (L.) seeds modulates plant-associated microbiome composition Reviewed International journal

    I. Tamošiūnė, D. Gelvonauskienė, L. Ragauskaitė, K. Koga, M. Shiratani, D. Baniulis

    Applied Physics Express   13   2020.5

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    DOI: 10.35848/1882-0786/ab9712

  • Growth of single crystalline films on lattice-mismatched substrates through 3D to 2D mode transition Reviewed International journal

    N. Itagaki, Y. Nakamura, R. Narishige, K. Takeda, K. Kamataki, K. Koga, M. Hori, M. Shiratani

    Sci. Rep.   10 ( 1 )   2020.3

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    Regarding crystalline film growth on large lattice-mismatched substrates, there are two primary modes by which thin films grow on a crystal surface or interface. They are Volmer-Weber (VW: island formation) mode and Stranski-Krastanov (SK: layer-plus-island) mode. Since both growth modes end up in the formation of three-dimensional (3D) islands, fabrication of single crystalline films on lattice-mismatched substrates has been challenging. Here, we demonstrate another growth mode, where a buffer layer consisting of 3D islands initially forms and a relaxed two-dimensional (2D) layer subsequently grows on the buffer layer. This 3D-2D mode transition has been realized using impurities. We observed the 3D-2D mode transition for the case of ZnO film growth on 18%-lattice-mismatched sapphire substrates. First, nano-sized 3D islands grow with the help of nitrogen impurities. Then, the islands coalesce to form a 2D layer after cessation of the nitrogen supply, whereupon an increase in the surface energy may provide a driving force for the coalescence. Finally, the films grow in 2D mode, forming atomically flat terraces. We believe that our findings will offer new opportunities for highquality film growth of a wide variety of materials that have no lattice-matched substrates.

    DOI: 10.1038/s41598-020-61596-w

  • Effects of surrounding gas on plasma-induced downward liquid flow Reviewed International journal

    T. Kawasaki, K. Nishida, G. Uchida, F. Mitsugi, K. Takenaka, K. Koga, Y. Setsuhara, M. Shiratani

    Jpn. J. Appl. Phys.   59 ( SH )   2020.3

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    © 2020 The Japan Society of Applied Physics. Understanding the mechanisms behind plasma-induced liquid flow is important for the transport of reactive species in liquid. In this study, we studied the effects of the surrounding gas compositions of a plasma-jet on the plasma-induced downward liquid flow using particle image velocimetry. Nitrogen (N2) and oxygen (O2) mixtures in different mixing ratios were supplied as surrounding gas around a helium (He) plasma jet at a constant flow rate. The results clearly indicated that O2 in the surrounding gas plays a key role in enhancing the downward flow. Increasing the O2 concentration increased the downward flow in the depth direction. An emission spectroscopy analysis suggested that reactive species related to excited atomic O were considered to be important for inducing downward flows. The relationship between the downward flows and oxidation reactions on a liquid target were discussed to determine the reasons responsible for the driving forces.

    DOI: 10.35848/1347-4065/ab71dc

  • Impact of radish sprouts seeds coat color on the electron paramagnetic resonance signals after plasma treatment Reviewed International journal

    K. Koga, P. Attri, K. Kamataki, N. Itagaki, M. Shiratani, V. Mildaziene

    Jpn. J. Appl. Phys.   59 ( SH )   2020.3

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    Recently, cold atmospheric plasma (CAP) treatment on seed germination has emerged as a useful technique to increase agriculture production, although, the mechanism of the cold plasma in seed germination is still under investigation. In this work, we studied the role of pigments in the seed coat of radish sprouts on the electron spin resonance (ESR) signals before and after CAP treatment. Radish sprouts seeds having gray color show enhanced ESR signals after the CAP treatment, whereas, no increased ESR signals were observed for brown color seeds of radish sprouts as compared to their respective control seeds. These results reveal that seeds from the same harvest year having different seed coat colors show different responses to the plasma treatment. Although ESR signal intensity can vary with the harvest year, the change in ESR signal intensity after plasma treatment depends on the seed coat color. Independently on the harvest year (2017 and 2018), CAP increased ESR signals stronger in the grey seeds in comparison to the brown ones. The results indicated that seed coat color may be an important variable for understanding differences in the extent of CAP effects on seeds. (C) 2020 The Japan Society of Applied Physics.

    DOI: 10.35848/1347-4065/ab7698

  • Relationship between cold plasma treatment-induced changes in radish seed germination and phytohormone balance Reviewed International journal

    L. D. Fomins, G. Pauzaite, R. Zukiene, V. Mildaziene, K. Koga, M. Shiratani

    Jpn. J. Appl. Phys.   59   2020.2

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    Language:English  

    DOI: 10.7567/1347-4065/ab656c

  • Dielectric barrier discharge plasma treatment-induced changes in sunflower seed germination, phytohormone balance, and seedling growth Reviewed International journal

    R. Zukiene, Z. Nauciene, I. Januskaitiene, G. Pauzaite, V. Mildaziene, K. Koga, M. Shiratani

    Appl. Phys. Express   12 ( 12 )   2019.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1882-0786/ab5491

  • Identification and Suppression of Si-H2 Bond Formation at P/I Interface in a-Si:H Films Deposited by SiH4 Plasma CVD Reviewed International journal

    K. Tanaka, H. Hara, S. Nagaishi, L. Shi, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Plasma Fusion Res.   14   2019.9

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    DOI: 10.1585/pfr.14.4406141

  • Spatial-Structure of Fluctuation of Amount of Nanoparticles in Amplitude-Modulated VHF Discharge Reactive Plasma Reviewed International journal

    R. Zhou, K. Kamataki, H. Ohtomo, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    Plasma Fusion Res.   14   2019.9

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    DOI: 10.1585/pfr.14.4406120

  • Effects of Gas Pressure on the Size Distribution and Structure of Carbon Nanoparticles Using Ar + CH4 Multi-Hollow Discharged Plasma Chemical Vapor Deposition Reviewed International journal

    S. H. Hwang, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Plasma Fusion Res.   14   2019.9

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    Language:English  

    DOI: 10.1585/pfr.14.4406115

  • Effect of Higher-Order Silane Deposition on Spatial Profile of Si-H2/Si-H Bond Density Ratio of a-Si:H Films Reviewed International journal

    L. Shi, K. Tanaka, H. Hara, S. Nagaishi, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Plasma Fusion Res.   14   2019.9

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    DOI: 10.1585/pfr.14.4406144

  • Progress and perspectives in dry processes for emerging multidisciplinary applications: how can we improve our use of dry processes? Reviewed International journal

    T. Iwase, Y. Kamaji, S. Y. Kang, K. Koga, N. Kuboi, M. Nakamura, N. Negishi, T. Nozaki, S. Nunomura, D. Ogawa, M. Omura, T. Shimizu, K. Shinoda, Y. Sonoda, H. Suzuki, K. Takahashi, T. Tsutsumi, K. Yoshikawa, T. Ishijima, K. Ishikawa

    Jpn. J. Appl. Phys.   58   2019.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-4065/ab163a

  • Effects of gas velocity on deposition rate and amount of cluster incorporation into a-Si:H films fabricated by SiH4 plasma chemical vapor deposition Reviewed International journal

    T. Kojima, S. Toko, K. Tanaka, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    Plasma Fusion Res.   13   1406082   2018.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1585/pfr.13.1406082

  • Dependence of CO2 Conversion to CH4 on CO2 Flow Rate in Helicon Discharge Plasma Reviewed International journal

    S. Toko, R. Katayama, K. Koga, E. Leal-Quiros, M. Shiratani

    Sci. Adv. Mater.   10 ( 5 )   2018.5

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    Language:English  

    DOI: 10.1166/sam.2018.3141

  • Synthesis of Nanoparticles using Low Temperature Plasmas and Its Application to Solar Cells and Tracers in Living Body Reviewed International journal

    K. Koga, H. Seo, A. Tanaka, N. Itagaki, M. Shiratani

    ECS Transactions   77 ( 3 )   2017.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/07703.0017ecst

  • Plant Growth Enhancement of Seeds Immersed in Plasma Activated Water Reviewed International journal

    T. Sarinont, R. Katayama, Y. Wada, K. Koga, M. Shiratani

    MRS Adv.   2 ( 18 )   2017.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1557/adv.2017.178

  • Response of Silkworm Larvae to Atmospheric Pressure Non-thermal Plasma Irradiation Reviewed International journal

    T. Sarinont, Y. Wada, K. Koga, M. Shiratani

    Plasma Medicine   6 ( 3-4 )   2017.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1615/PlasmaMed.2017019137

  • Effects of sputtering gas pressure dependence of surface morphology of ZnO films fabricated via nitrogen mediated crystallization Reviewed International journal

    K. Iwasaki, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    MRS Adv.   2 ( 5 )   2016.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1557/adv.2016.617

  • Blue Photoluminescence of (ZnO)0.92(InN)0.08 Reviewed International journal

    K. Matsushima, K. Iwasaki, N. Miyahara, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    MRS Adv.   2 ( 5 )   2016.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1557/adv.2016.625

  • Fluctuation of Position and Energy of a Fine Particle in Plasma Nanofabrication Reviewed International journal

    M. Shiratani, M. Soejima, H. Seo, N. Itagaki, K. Koga

    Materials Science Forum   879   2016.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.4028/www.scientific.net/MSF.879.1772

  • R&D status of agricultural applications of high voltage and plasma in Japan Invited International journal

    M. Shiratani, T. Sarinont, K. Koga and N. Hayashi

    Proc. Workshop on Application of Advanced Plasma Technologies in CE Agriculture   2016.4

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  • Quantum Characterization of Si Nano-Particles Fabricated by Multi-Hollow Discharge Plasma Chemical Vapor Deposition Reviewed International journal

    H. Seo, G. Uchida, N. Itagaki, K. Koga, and M. Shiratani

    Sci. Adv. Mater.   8 ( 3 )   2016.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1166/sam.2016.2520

  • Room Temperature Fabrication of (ZnO)x(InN)1-x films with Step-Terrace Structure by RF Magnetron Sputtering Reviewed International journal

    K. Matsushima, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    MRS Advances   1 ( 2 )   2016.1

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    DOI: 10.1557/adv.2015.59

  • Plant Growth Response to Atmospheric Air Plasma Treatments of Seeds of 5 Plant Species Reviewed International journal

    M. Shiratani, T. Sarinont, T. Amano, N. Hayashi, K. Koga

    MRS Adv.   1 ( 18 )   2016.1

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    DOI: 10.1557/adv.2016.37

  • Production of In, Au, and Pt nanoparticles by discharge plasmas in water for assessment of their bio-compatibility and toxicity Reviewed International journal

    T. Amano, T. Sarinont, K. Koga, M. Hirata, A. Tanaka, M. Shiratani

    MRS Adv.   1 ( 18 )   2016.1

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    DOI: 10.1557/adv.2016.41

  • 水素プラズマとカーボン壁の相互作用で発生したダストに対するダスト除去フィルタのダスト除去性能評価

    白谷正治, 古閑一憲, 立石瑞樹, 片山龍, 山下大輔, 鎌滝晋礼, 徐鉉雄, 板垣奈穂, 芦川直子, 時谷政行, 増崎貴, 西村清彦, 相良明男, LHD実験グループ

    九州大学超顕微解析研究センター報告   39   2015.12

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  • Raman Spectroscopy of a-C:H Films Deposited Using Ar + H2+ C7H8 Plasma CVD Reviewed International journal

    X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    Proc. 68th GEC/9th ICRP/33rd SPP   60 ( 9 )   2015.10

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  • Discharge characteristics and hydrodynamics behaviors of atmospheric plasma jets produced in various gas flow patterns Reviewed International journal

    Y. Setsuhara, G. Uchida, A. Nakajima, K. Takenaka, K. Koga, M. Shiratani

    Proc. 68th GEC/9th ICRP/33rd SPP   60 ( 9 )   2015.10

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  • Gas flow rate dependence of the production of reactive oxygen species in liquid by a plasma-jet irradiation Reviewed International journal

    G. Uchida, A. Nakajima, T. Kawasaki, K. Koga, K. Takenaka, M. Shiratani, Y. Setsuhara

    Proc. 68th GEC/9th ICRP/33rd SPP   60 ( 9 )   2015.10

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  • Effects of Ambient Humidity on Plant Growth Enhancement by Atmospheric Air Plasma Irradiation to Plant Seeds Reviewed International journal

    T. Sarinont, T. Amano, K. Koga, S. Kitazaki, N. Hayashi, M. Shiratani

    Proc. 68th GEC/9th ICRP/33rd SPP   60 ( 9 )   2015.10

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  • Measurement of absolute density of N atom in sputtering plasma for epitaxial growth ZnO films via nitrogen mediated crystallization Reviewed International journal

    T. Ide, K. Matsushima, T. Takasaki, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M, Shiratani, N. Itagaki

    Proc. 68th GEC/9th ICRP/33rd SPP   60 ( 9 )   2015.10

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  • Measurements of absolute densities of nitrogen and oxygen atoms in sputtering plasma for fabrication of ZnInON films Reviewed International journal

    K. Matsushima, T. Ide, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M, Shiratani, N. Itagaki

    Proc. 68th GEC/9th ICRP/33rd SPP   60 ( 9 )   2015.10

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  • Measurements of nitrogen atom density in N2/Ar sputtering plasma for fabrication of high-mobility amorphous In2O3:Sn films Reviewed International journal

    T. Takasaki, T. Ide, K. Matsushima, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M, Shiratani, N. Itagaki

    Proc. 68th GEC/9th ICRP/33rd SPP   60 ( 9 )   2015.10

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  • Fabrication of p-i-n solar cells utilizing ZnInON by RF magnetron sputtering Reviewed International journal

    K. Matsushima, R. Shimizu, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    Mat. Res. Soc. Symp. Proc.   1741   2015.3

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    DOI: 10.1557/opl.2015.248

  • ZnO-based semiconductors with tunable band gap for solar sell applications Invited Reviewed International journal

    N. Itagaki, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani

    Proc. SPIE photonics west 2015   9364   2015.3

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    DOI: 10.1117/12.2078114

  • Effects of morphology of buffer layers on ZnO/sapphire heteroepitaxial growth by RF magnetron sputtering Reviewed International journal

    T. Ide, K. Matsushima, R. Shimizu, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    Mat. Res. Soc. Symp. Proc.   1741   2015.2

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    DOI: 10.1557/opl.2015.87

  • Effects of Atmospheric Air Plasma Irradiation to Seeds of Radish Sprouts on Chlorophyll and Carotenoids Concentrations in their Leaves Reviewed International journal

    T. Sarinont, T. Amano, K. Koga, M. Shiratani, N. Hayashi

    Mat. Res. Soc. Symp. Proc.   1723   2015.2

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    DOI: 10.1557/opl.2015.39

  • Comparative Study on the Pulmonary Toxicity of Indium Hydroxide, Indium-Tin Oxide, and Indium Oxide Following Intratracheal Instillations into the Lungs of Rats Reviewed International journal

    A. Tanaka, M. Hirata, N. Matsumura, K. Koga, M. Shiratani, Y. Kiyohara

    Mat. Res. Soc. Symp. Proc.   1723   2015.2

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    DOI: 10.1557/opl.2015.21

  • Multigeneration Effects of Plasma Irradiation to Seeds of Arabidopsis Thaliana and Zinnia on Their Growth Reviewed International journal

    T. Sarinont, T. Amano, K. Koga, M. Shiratani, N. Hayashi

    Mat. Res. Soc. Symp. Proc.   1723   2015.1

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    DOI: 10.1557/opl.2015.12

  • 反応性微粒子プラズマプロセスを用いたゲルマニウム結晶ナノ粒子含有膜の堆積と量子ドット太陽電池への応用 Reviewed

    内田儀一郎, 市田大樹, 徐鉉雄, 古閑一憲, 白谷正治

    スマートプロセス学会誌   4 ( 1 )   2015.1

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  • SiC Nanoparticle Composite Anode for Li-Ion Batteries Reviewed International journal

    M. Shiratani, K. Kamataki, G. Uchida, K. Koga, H. Seo, N. Itagaki, T. Ishihara

    Mat. Res. Soc. Symp. Proc.   1678   2014.7

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    DOI: 10.1557/opl.2014.742

  • Plasma etching of single fine particle trapped in Ar plasma by optical tweezers Reviewed International journal

    T. Ito, K. Koga, D. Yamashita, K. Kamataki, N. Itagaki, G. Uchida and M. Shiratani

    J. Phys. : Conf. Series (SPSM26)   518 ( 1 )   2014.6

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    DOI: 10.1088/1742-6596/518/1/012014

  • Control of the area irradiated by the sheet-type plasma jet in atmospheric pressure Reviewed International journal

    T. Kawasaki, K. Kawano, H. Mizoguchi, Y. Yano, K. Yamashita, M. Sakai, G. Uchida, K. Koga, M. Shiratani

    J. Phys. : Conf. Series (SPSM26)   518 ( 1 )   2014.6

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    DOI: 10.1088/1742-6596/518/1/012016

  • Formation of carbon nanoparticle using Ar+CH4 high pressure nanosecond discharges Reviewed International journal

    K. Koga, X. Dong, S. Iwashita, U. Czarnetzki and M. Shiratani

    J. Phys. : Conf. Series (SPSM26)   518 ( 1 )   2014.6

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    DOI: 10.1088/1742-6596/518/1/012020

  • Growth enhancement effects of radish sprouts: atmospheric pressure plasma irradiation vs. heat shock Reviewed International journal

    T. Sarinont, T. Amano, S. Kitazaki, K. Koga, G. Uchida, M. Shiratani and N. Hayashi

    J. Phys. : Conf. Series (SPSM26)   518 ( 1 )   2014.6

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    DOI: 10.1088/1742-6596/518/1/012017

  • Contribution of H2 plasma etching to radial profile of amount of dust particles in a divertor simulator Reviewed International journal

    M. Tateishi, K. Koga, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura and A. Sagara, the LHD Experimental Group

    J. Phys. : Conf. Series (SPSM26)   518 ( 1 )   2014.6

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    DOI: 10.1088/1742-6596/518/1/012009

  • Contribution of ionic precursors to deposition rate of a-Si:H films fabricated by plasma CVD Reviewed International journal

    S. Toko, Y. Hashimoto, Y. Kanemitu, Y. Torigoe, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga and M. Shiratani

    J. Phys. : Conf. Series (SPSM26)   518 ( 1 )   2014.6

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    DOI: 10.1088/1742-6596/518/1/012008

  • Deposition of crystalline Ge nanoparticle films by high-pressure RF magnetron sputtering method Reviewed International journal

    D. Ichida, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga and M. Shiratani

    J. Phys. : Conf. Series (SPSM26)   518 ( 1 )   2014.6

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    DOI: 10.1088/1742-6596/518/1/012002

  • Effects of filter gap of cluster-eliminating filter on cluster eliminating efficiency Reviewed International journal

    Y. Hashimoto, S. Toko, D. Yamashita, H. Seo, K. Kamataki, N. Itagaki, K. Koga and M. Shiratani

    J. Phys. : Conf. Series (SPSM26)   518 ( 1 )   2014.6

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    DOI: 10.1088/1742-6596/518/1/012007

  • Emission spectroscopy of Ar + H-2+ C7H8 plasmas: C7H8 flow rate dependence and pressure dependence Reviewed International journal

    X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine and M. Hori

    J. Phys. : Conf. Series (SPSM26)   518 ( 1 )   2014.6

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    DOI: 10.1088/1742-6596/518/1/012010

  • Off-axis sputter deposition of ZnO films on c-sapphire substrates with buffer layers prepared via nitrogen-mediated crystallization Invited Reviewed International journal

    N. Itagaki, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani

    Proc. SPIE photonics west 2014   8987   2014.3

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    DOI: 10.1117/12.2041081

  • Effects of Atmospheric Air Plasma Irradiation on pH of Water Reviewed International journal

    T. Sarinont, K. Koga, S. Kitazaki, G. Uchida, N. Hayashi, M. Shiratani

    JPS Conf. Proc.   1   2014.3

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    DOI: 10.7566/JPSCP.1.015078

  • Pressure dependence of carbon film deposition using H-assisted plasma CVD Reviewed International journal

    X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, K. Takenaka, Y. Setsuhara, M. Sekine, M. Hori

    Proc. 8th Int. Conf. Reactive Plasmas   2014.2

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  • Effects of growth enhancement by plasma irradiation to seeds in water Reviewed International journal

    T. Sarinont, K. Koga, S. Kitazaki, M. Shiratani, N. Hayashi

    Proc. 8th Int. Conf. Reactive Plasmas   2014.2

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  • Long term growth of radish sprouts after atmospheric pressure DBD plasma irradiation to seeds Reviewed International journal

    T. Amano, T. Sarinont, S. Kitazaki, N. Hayashi, K. Koga, M. Shiratani

    Proc. 8th Int. Conf. Reactive Plasmas   2014.2

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  • Multi-generation evaluation of plasma growth enhancement to arabidopsis thaliana (Invited) Invited Reviewed International journal

    K. Koga, T. Sarinont, S. Kitazaki, N. Hayashi, M. Shiratani

    Proc. 8th Int. Conf. Reactive Plasmas   2014.2

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  • Visualization of oxidizing substances generated by atmospheric pressure non-thermal plasma jet with water Reviewed International journal

    T. Kawasaki, K. Kawano, H. Mizoguchi, Y. Yano, K. Yamashita, M. Sakai, G. Uchida, K. Koga, M. Shiratani

    Proc. 8th Int. Conf. Reactive Plasmas   2014.2

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  • Growth control of ZnO nano-rod with various seeds and photovoltaic application Reviewed International journal

    H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    J. Phys. : Conference Series (11th APCPST)   441 ( 1 )   2013.6

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    DOI: 10.1088/1742-6596/441/1/012029

  • Control of nanoparticle formation in reactive plasmas and its application to fabrication of green energy devices Invited Reviewed International journal

    M. Shiratani, G. Uchida, K. Kamataki, H. Seo, N. Itagaki, K. Koga

    Proc. 13th International Conference on Plasma Surface Engineering   2 ( 26 )   2013.3

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  • Subacute pulmonary toxicity of copper indium gallium diselenide following intratracheal instillations into the lungs of rats Reviewed International journal

    A. Tanaka, M. Hirata, M. Shiratani, K. Koga, Y. Kiyohara

    Journal of Occupational Health   54 ( 3 )   2012.6

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    DOI: 10.1539/joh.11-0164-OA

  • The Optical Analysis and Application of Size-controllable Si Quantum Dots Fabricated by Multi-hollow Discharge Plasma Chemical Vapor Deposition Reviewed International journal

    H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Mat. Res. Soc. Symp. Proc.   1426   2012.4

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    DOI: 10.1557/opl.2012.890

  • Effects of Atmospheric Pressure Dielectric Barrier Discharge Plasma Irradiation on Yeast Growth Reviewed International journal

    S. Kitazaki, K. Koga, M. Shiratani, N. Hayashi

    Mat. Res. Soc. Symp. Proc.   1469   2012.4

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    DOI: 10.1557/opl.2012.969

  • Influence of Atmospheric Pressure Torch Plasma Irradiation on Plant Growth Reviewed International journal

    Y. Akiyoshi, N. Hayashi, S. Kitazaki, K. Koga and M. Shiratani

    Mat. Res. Soc. Symp. Proc.   1469   2012.4

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    DOI: 10.1557/opl.2012.970

  • Rapid Growth of Radish Sprouts Using Low Pressure O2 Radio Frequency Plasma Irradiation Reviewed International journal

    S. Kitazaki, K. Koga, M. Shiratani, N. Hayashi

    Mat. Res. Soc. Symp. Proc.   1469   2012.4

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    DOI: 10.1557/opl.2012.966

  • Characteristics of stable a-Si:H Schottoky cells fabricated by suppressing cluster deposition Reviewed International journal

    M. Shiratani, K. Hatozaki, Y. Hashimoto, Y. Kim, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga

    Mat. Res. Soc. Symp. Proc.   1426   2012.4

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    DOI: 10.1557/opl.2012.1245

  • In-situ Measurements of Cluster Volume Fraction in Silicon Thin Films Using Quartz Crystal Microbalances Reviewed International journal

    Y. Kim, K. Hatozaki, Y. Hashimoto, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Mat. Res. Soc. Symp. Proc.   1426   2012.4

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    DOI: 10.1557/opl.2012.839

  • Self-organized carbon Mk formation on the top surface of fine trenches using a low temperature plasma anisotropic CVD for depositing fine organic structure International journal

    K. Koga, T. Urakawa, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    Proc. Plasma Conf. 2011   2011.11

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  • Deposition of FeSi2 nano-particle film International journal

    M. Sato, Y. Wang, K. Nakahara, T. Matsunaga, H. Seo, G. Uchida, K. Koga and M. Shiratani

    Proc. Plasma Conf. 2011   2011.11

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  • Effects of substrate bias voltage on plasma anisotropic CVD of carbon using H-assisted plasma CVD reactor International journal

    T. Urakawa, H. Matsuzaki, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    Proc. Plasma Conf. 2011   2011.11

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  • Growth promotion characteristics of bread yeast by atmospheric pressure dielectric barrier discharge plasma irradiation International journal

    S. Kitazaki, K. Koga, M. Shiratani, N. Hayashi

    Proc. Plasma Conf. 2011   2011.11

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  • Production Process of Carbon Nanotube Coagulates International journal

    T. Mieno, K. Koga, M. Shiratani

    Proc. Plasma Conf. 2011   2011.11

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  • Influence of active oxygen species produced by atmospheric torch plasma on plant growth Reviewed International journal

    N. Hayashi, Y. Akiyoshi, S. Kitazaki, K. Koga, M. Shiratani

    Proc. Intern. Symp. on Dry Process   33   2011.11

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  • Optical emission spectroscopy of Ar+H2+ C7H8 discharges for anisotropic plasma CVD of carbon Reviewed International journal

    T. Urakawa, H. Matsuzaki, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    Proc. Intern. Symp. on Dry Process   33   2011.11

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  • Quantum dot-sensitized solar cells using nitridated si nanoparticles produced by double multi-hollow discharges Reviewed International journal

    M. Sato, Y. Wang, K. Nakahara, T. Matsunaga, H. Seo, G. Uchida, K. Koga, M. Shiratani

    Proc. PVSEC-21   2011.11

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  • Stable schottky solar cells using cluster-free a-si:h prepared by multi-hollow discharge plasma CVD Reviewed International journal

    K. Hatozaki, K. Nakahara, G. Uchida, K. Koga, M. Shiratani

    Proc. PVSEC-21   2011.11

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  • Deposition of highly stable cluster-free a-Si:H films using fast gas flow multi-hollow discharge plasma CVD method International journal

    K. Hatozaki, K. Nakahara, T. Matsunaga, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    Proc. Plasma Conf. 2011   2011.11

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  • Performance enhancement of Si quantum dot-sensitized solar cells by surface modification using ZnO barrier layer International journal

    Y. Wang, M. Sato, H. Seo, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    Proc. Intern. Symp. on Dry Process   33   2011.11

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  • Surface nitridation of silicon nano-particles using double multi-hollow discharge plasma CVD Reviewed International journal

    G. Uchida, K. Yamamoto, Y. Kawashima, M. Sato, K. Nakahara, K. Kamataki, N. Itagaki, K. Koga, M. Kondo, M. Shiratani

    Physica Status Solidi (c)   8 ( 10 )   2011.10

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    DOI: 10.1002/pssc.201001230

  • Deposition of cluster-free P-doped a-Si:H films using SiH4+PH3 multi-hollow discharge plasma CVD method Reviewed International journal

    K. Koga, K. Nakahara, Y. Kim, Y. Kawashima, T. Matsunaga, M. Sato, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, and M. Shiratani

    Physica Status Solidi (c)   8 ( 10 )   2011.10

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    DOI: 10.1002/pssc.201100229

  • Hybrid sensitized solar cells using Si nanoparticles and ruthenium dye Reviewed International journal

    G. Uchida, Y. Kawashima, K. Yamamoto, M. Sato, K. Nakahara, T. Matsunaga, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Kondo, M. Shiratani

    Physica Status Solidi (c)   8 ( 10 )   2011.10

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    DOI: 10.1002/pssc.201100166

  • Deposition profile control of carbon films on submicron wide trench substrate using H-assisted plasma CVD International journal

    T. Urakawa, T. Nomura, H. Matsuzaki, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    Proc. of The 20th International Symposium on Plasma Chemistry (ISPC20)   2011.7

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  • Generation and Surface Modification of Si nano-particles using SiH4/H2 and N2 multi-hollow discharges and their application to the third generation photovoltaics Invited Reviewed International journal

    K. Koga, G. Uchida, K. Yamamoto, Y. Kawashima, M. Sato, K. Kamataki, N. Itagaki, M. Shiratani

    International Conference on Advances in Condensed and Nano Materials (ICACNM)   1393   2011.2

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    DOI: 10.1063/1.3653600

  • マルチホロー放電プラズマCVDによる量子ドット増感太陽電池用シリコンナノ結晶粒子の作製

    内田儀一郎, 古閑一憲, 白谷正治

    ケミカルエンジニヤリング   55 ( 12 )   947 - 954   2010.12

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  • Fluctuation Control for Plasma Nanotechnologies Reviewed International journal

    M. Shiratani, K. Koga, G. Uchida, N. Itagaki, K. Kamataki

    Proc. IEEE TENCON 2010   2010.11

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    プラズマナノテクノロジーで最重要課題となっている揺らぎの制御に関する現状と将来を展望した論文。

    DOI: 10.1109/TENCON.2010.5685920

  • Growth Stimulation of Radish Sprouts Using Discharge Plasma Reviewed International journal

    S. Kitazaki, D. Yamashita, H. Matsuzaki, G. Uchida, K. Koga, M. Shiratani

    Proc. IEEE TENCON 2010   2010.11

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    DOI: 10.1109/TENCON.2010.5686474

  • Photoluminescence of Si nanoparticles synthesized using multi-hollow discharge plasma CVD Reviewed International journal

    Y. Kawashima, K. Yamamoto, M. Sato, T. Matsunaga, K. Nakahara, D. Yamashita, H. Matsuzaki, G. Uchida, K. Koga, M. Shiratani

    Proc. IEEE TENCON 2010   2010.11

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    DOI: 10.1109/TENCON.2010.5686677

  • Redox Characteristics of Amino Acids Using Low Pressure Water Vapor RF Plasma Reviewed International journal

    Y. Akiyoshi, A. Nakahigashi, N. Hayashi, S. Kitazaki, Takuro Iwao, K. Koga, M. Shiratani

    Proc. IEEE TENCON 2010   2010.11

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    Language:English   Publishing type:Research paper (international conference proceedings)  

    DOI: 10.1109/TENCON.2010.5686467

  • Substrate temperature dependence of feature profile of carbon films on substrate with submicron trenches Reviewed International journal

    T. Nomura, T. Urakawa, Y. Korenaga, D. Yamashita, H. Matsuzaki, K. Koga, M. Shiratani

    Proc. IEEE TENCON 2010   2010.11

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    DOI: 10.1109/TENCON.2010.5686688

  • Cluster-Free B-Doped a-Si:H Films Deposited Using SiH4 + B10H14 Multi-Hollow Discharges Reviewed International journal

    K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, K. Yamamoto, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    Proc. IEEE TENCON 2010   2010.11

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    DOI: 10.1109/TENCON.2010.5686686

  • Deposition profiles of microcrystalline silicon films using multi-hollow discharge plasma CVD Reviewed International journal

    T. Matsunaga, Y. Kawashima, K. Koga, K. Nakahara, W. M. Nakamura, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani

    Proc. IEEE TENCON 2010   2010.11

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    DOI: 10.1109/TENCON.2010.5686679

  • Effects of Amplitude Modulation of rf Discharge Voltage on Growth of Nano-Particles in Reactive Plasma Reviewed International journal

    K. Kamataki, H. Miyata, K. Koga, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani

    Proc. IEEE TENCON 2010   2010.11

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    DOI: 10.1109/TENCON.2010.5686456

  • Effects of Ar addition on breakdown voltage in a Si(CH3)2(OCH3)2 RF discharge Reviewed International journal

    G. Uchida, S. Nunomutra, H. Miyata, S. Iwashita, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Proc. IEEE TENCON 2010   2010.11

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    DOI: 10.1109/TENCON.2010.5686704

  • Deposition rate enhancement of cluster-free P-doped a-Si:H films using multi-hollow discharge plasma CVD method International journal

    K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, K. Yamamoto, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma   55 ( 7 )   2010.10

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  • Plasma parameter measurements of Ar+H2+C7H8 plasma in H-assisted plasma CVD reactor International journal

    T. Nomura, T. Urakawa, Y. Korenaga, D. Yamashita, H. Matsuzaki, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma   55 ( 7 )   2010.10

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  • Redox Characteristics of Thiol of Plants Using Radicals Produced by RF Discharge International journal

    A. Nakahigashi, Y. Akiyoshi, N. Hayashi, S. Kitazaki, K. Koga, M. Shiratani

    Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma   55 ( 7 )   2010.10

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  • Combinatorial deposition of microcrystalline Si films using multi-hollow discharge plasma CVD International journal

    T. Matsunaga, Y. Kawashima, K. Koga, W. M. Nakamura, K. Nakahara, H. Matsuzaki, D. Yamashita, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani

    Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma   55 ( 7 )   2010.10

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  • Quantum dot-sensitized solar cells using Si nanoparticles Reviewed International journal

    Y. Kawashima, K. Nakahara, H. Sato, K. Koga, M. Shiratani, M. Kondo

    Trans. Mater. Res. Soc. Jpn.   35 ( 3 )   2010.9

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  • Si quantum dot-sensitized solar cells using Si nanoparticles produced by plasma CVD Reviewed International journal

    Y. Kawashima, K. Yamamoto, M. Sato, K. Nakahara, T. Matsunaga, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, M. Kondo

    Proc. 35th IEEE Photovoltaic Specialists Conf.   2010.7

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    DOI: 10.1109/PVSC.2010.5617205

  • Effects of hydrogen dilution on electron density in multi-hollow discharges with magnetic field for A-Si:H film deposition Reviewed International journal

    K. Koga, Y. Kawashima, K. Nakahara, T. Matsunaga, W. M. Nakamura, M. Shiratani

    Proc. 35th IEEE Photovoltaic Specialists Conf.   2010.7

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    DOI: 10.1109/PVSC.2010.5616502

  • Deposition of cluster-free P-doped a-Si:H films using a multi-hollow discharge plasma CVD method Reviewed International journal

    K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, K. Yamamoto, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Proc. 35th IEEE Photovoltaic Specialists Conf.   2010.7

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    DOI: 10.1109/PVSC.2010.5616514

  • Synthesis of crystalline Si nanoparticles for Quantum dots-sensitized solar cells using multi-hollow discharge plasma CVD International journal

    Y. Kawashima, K. Nakahara, H. Sato, K. Koga, M. Shiratani, M. Kondo

    Proc. of the 27th symposium on plasma processing   ( B5-05 )   2010.2

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  • Control of deposition profile of hard carbon films on trenched substrates using H-assisted plasma CVD reactor International journal

    T. Nomura, Y. Korenaga, H. Matsuzaki, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    Proc. of the 27th symposium on plasma processing   ( P1-39 )   2010.2

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  • Effects of gas residence time and H2 dilution on electron density in multi-hollow discharges of SiH4+ H2 International journal

    K. Koga, H. Sato, Y. Kawashima, W. M. Nakamura, M. Shiratani

    Proc. of the 27th symposium on plasma processing   ( A5-06 )   2010.2

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  • In-situ Measurement of Production Process of Nanotube-Aggregates by the Laser-Mie Scattering (Dependence of Arc Condition and Gravity) International journal

    T. Mieno, GuoDong Tan, S. Usuba, K. Koga, M. Shiratani

    Proc. of the 27th symposium on plasma processing   ( P2-17 )   2010.2

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  • In-Situ Sampling of Dust Particles Produced Due to Interaction between Main Discharge Plasma and Inner Wall in LHD International journal

    H. Miyata, S. Iwashita, YasuY. Yamada, K. Koga, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, LHD Experimental Group

    Proc. of the 27th symposium on plasma processing   ( P1-14 )   2010.2

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  • Measurement of electron density in multi-hollow discharges with magnetic field International journal

    H. Sato, Y. Kawashima, K. Nakahara, K. Koga, M. Shiratani

    Proc. of the 27th symposium on plasma processing   ( A6-01 )   2010.2

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  • Observation of nano-particle transport in capacitively coupled radio frequency discharge plasma International journal

    S. Iwashita, H. Miyata, YasuY. Yamada, H. Matsuzaki, K. Koga, M. Shiratani

    Proc. of the 27th symposium on plasma processing   ( P1-13 )   2010.2

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  • Substrate temperature dependence of deposition profile of plasma CVD carbon films in trenches Reviewed International journal

    J. Umetsu, K. Inoue, T. Nomura, H. Matsuzaki, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    J. Plasma Fusion Res.   8   2009.9

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  • Dust Particles formed owing to interactions between H2 or D2 helicon plasma, graphite International journal

    H. Miyata, S. Iwashita, YasuY. Yamada, K. Koga, M. Shiratani

    Proc. of 2009 International Symposium on Dry Process   2009.9

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  • Measurements of electron density in SiH4+H2 multi-hollow discharges using a frequency shift probe International journal

    K. Nakahara, Y. Kawashima, H. Sato, K. Koga, M. Shiratani

    Proc. of 2009 International Symposium on Dry Process   2009.9

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  • Measurements of Surface Temperature of a-Si:H Films in Silane Multi-Hollow Discharge with IR Thermometer International journal

    H. Sato, Y. Kawashima, K. Koga, M. Shiratani

    Proc. of 2009 International Symposium on Dry Process   2009.9

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  • Porosity Control of Nano-Particle Composite Porous Low Dielectric Films using Pulse RF Discharges with Amplitude Modulation International journal

    S. Iwashita, H. Miyata, K. Koga, H. Matsuzaki, M. Shiratani, M. Akiyama

    Proc. of 2009 International Symposium on Dry Process   2009.9

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  • Pressure, aspect ratio dependence of deposition profile of carbon films on trench substrates deposited by plasma CVD International journal

    T. Nomura, Y. Korenaga, J. Umetsu, H. Matsuzaki, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    Proc. of 2009 International Symposium on Dry Process   2009.9

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  • Synthesis of Si nanoparticles for multiple exciton generation solar cells using multi-hollow discharge plasma CVD International journal

    Y. Kawashima, H. Sato, K. Koga, M. Shiratani, M. Kondo

    Proc. of 2009 International Symposium on Dry Process   2009.9

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  • Toward plasma nano-factories International journal

    M. Shiratani, K. Koga

    Proc. of 2nd International Conference on Advanced Plasma Technologies (iCAPT-II) with 1st International Plasma Nanoscience Symposium (iPlasmaNano-I)   2009.9

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  • A comparison of dust particles produced due to interaction between graphite and plasma: LHD vs helicon discharges Reviewed International journal

    S. Iwashita, H. Miyata, K. Koga, M. Shiratani, N. Ashikawa, K. Nishimura, A. Sagara, the LHD experimental group

    J. Plasma Fusion Res.   8   2009.9

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  • Control of Three Dimensional Transport of Nano-blocks by Amplitude Modulated Pulse RF Discharges using an Electrode with Needles Reviewed International journal

    S. Iwashita, H. Miyata, H. Matsuzaki, K. Koga, M. Shiratani

    J. Plasma Fusion Res.   8   2009.9

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  • Dependence of volume fraction of clusters on deposition rate of a-Si:H films deposited using a multi-hollow discharge plasma CVD method Reviewed International journal

    H. Sato, Y. Kawashima, M. Tanaka, K. Koga, W. M. Nakamura, M. Shiratani

    J. Plasma Fusion Res.   8   2009.9

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  • Detection of nano-particles formed in cvd plasma using a two-dimensional photon-counting laser-light-scattering method Reviewed International journal

    H. Miyahara, S. Iwashita, H. Miyata, H. Matsuzaki, K. Koga, M. Shiratani

    J. Plasma Fusion Res.   8   2009.9

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  • Optical Emission Spectroscopy of a Magnetically Enhanced Multi-hollow Discharge Plasma for a-Si:H Deposition Reviewed International journal

    W. M. Nakamura, Y. Kawashima, M. Tanaka, H. Sato, J. Umetsu, H. Miyahara, H. Matsuzaki, K. Koga, M. Shiratani

    J. Plasma Fusion Res.   8   2009.9

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  • Plasma CVD of Nano-particle Composite Porous SiOCH Films International journal

    M. Shiratani, S. Iwashita, H. Miyata, K. Koga, H. Matsuzaki, M. Akiyama

    Proc. of 19th International Symposium on Plasma Chemistry   2009.7

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  • Characterization of Dust Particles Ranging in Size from 1 nm to 10 µm Collected in the LHD Reviewed International journal

    KOGA Kazunori, IWASHITA Shinya, KIRIDOSHI Satoru, SHIRATANI Masaharu, ASHIKAWA Naoko, NISHIMURA Kiyohiko, SAGARA Akio, KOMORI Akio, LHD Experimental Group

    Plasma and Fusion Research   4   34 - 34   2009.4

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    Characterization of Dust Particles Ranging in Size from 1 nm to 10 m Collected in LHD
    We collected dust particles ranging in size from 1 nm to 10 µm from the Large Helical Device employing two methods: an ex-situ filtered vacuum collection method and an in-situ dust collection method. The size distribution from 1 nm to 10 µm is well expressed by the Junge distribution. Dust particles are classified into three kinds: small spherical dust particles below 1 µm in size, agglomerates consisting of primary particles of 10 nm, and large dust particles above 1 µm in size and irregular in shape; this suggests three formation mechanisms of dust particles: chemical vapor deposition growth, agglomeration, and peeling from walls. In-situ collection shows that agglomeration between dust particles takes place in main discharges. The primary dust particles in agglomerates are around 10 nm in size, suggesting agglomeration between a negatively charged large agglomerate and a positively charged dust particle 10 nm in size. We have also confirmed the important fact that a large number of dust particles move during vacuum vent. Therefore, the in-situ dust collection method is needed to reveal the generation-time and -processes of dust particles and their deposition position during discharges.

    DOI: 10.1585/pfr.4.034

  • Nano-block manipulation using pulse RF discharges with amplitude modulation combined with a needle electrode

    S. Iwashita, H. Miyata, H. Matsuzaki, K. Koga, M. Shiratani

    Proc. of PSS2009/SPP26   2009.2

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  • Characteristics of dust particles produced due to interaction between hydrogen plasma, graphite

    S. Iwashita, H. Miyata, K. Koga, M. Shiratani, N. Ashikawa, A. Sagara, K. Nisimura

    Proc. of PSS2009/SPP26   2009.2

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  • Conductivity of nc-Si films depsited using multi-hollow discharge plasma CVD method

    K. Koga, Y. Kawashima, W. M. Nakamura, H. Sato, M. Tanaka, M. Shiratani, M. Kondo

    Proc. of PSS2009/SPP26   2009.2

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  • Deposition profile of toluene plasma CVD carbon films in trenches

    J. Umetsu, K. Inoue, T. Nomura, H. Matsuzaki, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    Proc. of PSS2009/SPP26   2009.2

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  • Effects of magnetic fields on multi-hollow discharges for thin film silicon solar cells

    Nakamura W. M., Sato H., Koga K., Shiratani M.

    Proc. of PSS2009/SPP26   2009.2

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  • High Rate Deposition of a-Si:H Depositied using a Low Gas Pressure Multi-hollow Discharge Plasma CVD Method

    K. Koga, W. M. Nakamura, H. Sato, M. Tanaka, H. Miyahara, M. Shiratani

    Proc. of PSS2009/SPP26   2009.2

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  • Plasma CVD of Nano-particle Composite Porous Films of k=1.4-2.9, Young’s Modulus above 10 GPa Reviewed International journal

    S. Iwashita, H. Miyata, K. Koga, H. Matsuzaki, M. Shiratani, M. Akiyama

    Proc. of 30th International Symposium on Dry Process   2008.12

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  • Deposition profile of plasma CVD carbon films in trenches Reviewed International journal

    J. Umetsu, K. Inoue, T. Nomura, H. Matsuzaki, K. Koga, Y. Setsuhara, M. Shiratani, M. Sekine, M. Hori

    Proc. of 30th International Symposium on Dry Process   2008.12

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  • Rapid transport of nano-particles in amplitude modulated rf discharges for depositing porous ultra-low-k films Reviewed International journal

    S. Iwashita, K. Koga, M. Morita, M. Shiratani

    J. Phys. : Conference Series   100 ( 6 )   2008.8

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    DOI: 10.1088/1742-6596/100/6/062006

  • Optical emission spectroscopic study on H-assisted plasma for anisotropic deposition of Cu films Reviewed International journal

    J. Umetsu, K. Koga, K. Inoue, M. Shiratani

    J. Phys. : Conference Series   100 ( 6 )   2008.8

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    DOI: 10.1088/1742-6596/100/6/062007

  • Cluster incorporation control for a-Si:H film deposition Reviewed International journal

    W. M. Nakamura, K. Koga, H. Miyahara, M. Shiratani

    J. Phys. : Conference Series   100 ( 8 )   2008.8

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    DOI: 10.1088/1742-6596/100/8/082018

  • Nanoparticle-Suppressed Plasma CVD for Depositing Stable a-Si:H Films Reviewed International journal

    M. Shiratani, W. M. Nakamura, H. Miyahara, K. Koga

    Digest of Technical Papers of the Fifteenth International Workshop on Active-Matrix Flatpanel Displays, Devices (AM-FPD 08)   2008.7

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  • Rapid transport of nano-particles having a fractional elemental charge on average in capacitively coupled rf discharges by amplitude modulating discharge voltage Invited Reviewed International journal

    M. Shiratani, S. Iwashita, K. Koga, S. Nunomura

    Faraday Discussions   137   2008.1

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    DOI: 10.1039/B704910B

  • VHF discharge sustained in a small hole Reviewed International journal

    K. Koga, W. M. Nakamura, and M. Shiratani

    Proc. 28th Intern. Conf. on Phenomena in Ionized Gases   2007.7

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  • Transport of nano-particles in pulsed AM RF discharges

    S. Iwashita, K. Koga, M. Shiratani

    Proc. the 24th Symp. on Plasma Processing   2007.1

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  • In-situ sampling of dust generated in LHD and its analysis

    M. Shiratani, S. Kiridoshi, K. Koga, S. Iwashita, N. Ashikawa, K. NIshimura, A. Sagara, A. Komori, LHD Experimental Group

    Proc. the 24th Symp. on Plasma Processing   2007.1

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  • Stability of a-Si:H deposited using multi-hollow plasma CVD

    K. Koga, W. M. Nakamura, D. Shimokawa, M. Shiratani

    Proc. the 24th Symp. on Plasma Processing   2007.1

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  • Fabrication of nanoparticle composite porous films having ultra-low dielectric constant Reviewed International journal

    S. Nunomura, K. Koga, M. Shiratani, Y. Watanabe, Y. Morisada, N. Matsuki, and S. Ikeda

    Jpn. J. Appl. Phys.   44 ( 50 )   2005.12

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    DOI: 10.1143/JJAP.44.L1509

  • Highly stable a-Si:H films deposited by using multi-hollow plasma chemical vapor deposition Reviewed International journal

    K. Koga, T. Inoue, K. Bando, S. Iwashita, M. Shiratani, and Y. Watanabe

    Jpn. J. Appl. Phys.   44 ( 48 )   2005.11

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    DOI: 10.1143/JJAP.44.L1430

  • Production of crystalline Si nano-particles using VHF discharges and their properties Reviewed International journal

    M. Shiratani, T. Kakeya, K. Koga, Y. Watanabe, and M. Kondo

    Trans. Mater. Res. Soc. Jpn.   30 ( 1 )   2005.3

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  • Preparation of high-quality a-Si:H using cluster-suppressed plasma CVD method and its prospects Invited Reviewed International journal

    Y. Watanabe, M. Shiratani, K. Koga

    Trans. Mater. Res. Soc. Jpn.   30 ( 1 )   2005.3

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  • Carbon particle formation due to interaction between H2 plasma and carbon fiber composite wall Reviewed International journal

    K. Koga, R. Uehara, Y. Kitaura, M. Shiratani, Y. Watanabe, A. Komori

    IEEE Trans. Plasma Science   32 ( 2 )   2004.2

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    DOI: 10.1109/TPS.2004.828129

  • Effects of Excitation Frequency and H2 Dilution on Cluster Generation in Silane High-Frequency Discharges Reviewed International journal

    M. Shiratani, K. Koga, A. Harikai, T. Ogata, and Y. Watanabe

    MRS Symp. Proc.   762   2003.4

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    DOI: 10.1557/PROC-762-A9.5

  • シランプラズマ中のクラスタ成長と薄膜形成

    白谷正治, 古閑一憲, 尾形隆則, 掛谷知秀, 鹿口直斗, 渡辺征夫

    信学技報   103 ( 6 )   2003.4

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    Growth of Clusters in Silane Plasma and Their Relation to Deposition of Thin Films

  • Anisotropic Plasma Chemical Vapor Deposition of Copper Films in Trenches Reviewed International journal

    K. Takenaka, M. Onishi, M. Takeshita, T. Kinoshita, K. Koga, M. Shiratani, and Y. Watanabe

    MRS Symp. Proc.   766   2003.4

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    DOI: 10.1557/PROC-766-E3.8

  • Anisotropic Deposition of Copper by H-Assisted Plasma Chemical Vapor Deposition Reviewed International journal

    K. Takenaka, M. Shiratani, M. Onishi, M. Takeshita, T. Kinoshita, K. Koga, and Y. Watanabe

    Matr. Sci. Semiconductor Processing   5 ( 2 )   2003.2

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    DOI: 10.1016/S1369-8001(02)00108-7

  • ナノクラスタ制御プラズマCVDと高品質,光安定a-Si:H太陽電池への応用

    白谷正治, 古閑一憲, 渡辺征夫

    アモルファスセミナーテキスト   2002.11

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  • Formation of nano-particles in microgravity plasma Reviewed International journal

    M. Shiratani, K. Koga, Y. Watanabe

    Journal of Japan Society of Microgravity Application   19   2002.10

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  • Anisotropic deposition of copper by plasma CVD method International journal

    K. Takenaka, M. Onishi, M. Takenaka, T. Kinoshita, K. Koga, M. Shiratani, Y. Watanabe

    Proc. Intern. Symp. on Dry Process   2002.10

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  • Nucleation and subsequent growth of clusters in reactive plasma (invited lecture paper) Reviewed International journal

    Y. Watanabe, M. Shiratani, K. Koga

    Plasma Sources Sci. Technol.   11   2002.8

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    DOI: 10.1088/0963-0252/11/3A/334

  • Correlation between Si cluster amount in silane HF discharges and quality of a-Si:H films International journal

    M. Shiratani, M. Kai, K. Imabeppu, K. Koga, Y. Watanabe

    Proc. ESCANPIG16/ICRP5 Joint Meeting   2002.7

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  • Anisotropic deposition of Cu with H-assisted plasma CVD International journal

    K. Takenaka, H. J. Jin, M. Onishi, K. Koga, M. Shiratani, Y. Watanabe

    Proc. ESCANPIG16/ICRP5 Joint Meeting   2002.7

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  • Conformal deposition of pure Cu films in trenches by H-assisted plasma CVD using Cu(EDMDD)2 International journal

    K. Takenaka, H. J. Jin, M. Onishi, K. Koga, M. Shiratani, Y. Watanabe, T. Shingen

    Proc. ESCANPIG16/ICRP5 Joint Meeting   2002.7

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  • Suppression methods of cluster growth in silane discharges and their application to deposition of super high quality a-Si:H films International journal

    K. Koga, K. Imabeppu, M. Kai, A. Harikai, M. Shiratani, Y. Watanabe

    Proc. Intern. Workshop on Information and Electrical Engineering (IWIE2002)   2002.5

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  • Deposition of Cu films in trenches for LIS interconnects by H-assisted plasma CVD method International journal

    K. Takenaka, M. Onishi, T. Kinoshita, K. Koga, M. Shiratani, Y. Watanabe, T. Shingen

    Proc. Intern. Workshop on Information and Electrical Engineering (IWIE2002)   2002.5

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  • Clustering phenomena in low-pressure reactive plasma: basis and applications (invited lecture paper) Reviewed International journal

    Y. Watanabe, A. Harikai, K. Koga, M. Shiratani

    Pure Appl. Chem.   74 ( 3 )   2002.3

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    DOI: 10.1351/pac200274030483

  • In-situ measurement of size and density of particles in sub-nm to nm size range International journal

    K. Koga, M. Shiratani, Y. Watanabe

    Proc. Nano-technology Workshop   2002.2

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  • Deposition of high-quality Si films by suppressing cluster growth in SiH4 high-frequency discharges International journal

    M. Shiratani, K. Koga, Y. Watanabe

    Proc. Nano-technology Workshop   2002.2

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  • プロセスプラズマ中のクラスタ - アモルファスシリコン太陽電池製造用プラズマ中のクラスター Reviewed

    白谷正治, 古閑一憲, 渡辺征夫

    Bulletin of Cluster Sci. Technol.   ( 5 )   2002.1

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  • クラスタ制御プラズマCVD法によるSi薄膜の高品質化

    渡辺征夫, 古閑一憲, 白谷正治

    シリコンテクノロジー   ( 37 )   2002.1

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  • Deposition of pure copper thin films by H-assisted plasma CVD using a new Cu complex Cu(EDMDD)2 International journal

    K. Takenaka, H. J. Jin, M. Onishi, K. Koga, M. Shiratani, Y. Watanabe

    Proc. Intern. Symp. on Dry Process   2001.11

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  • Cluster-less plasma CVD reactor and its application to a-Si:H film deposition Reviewed International journal

    M. Shiratani, K. Koga, Y. Watanabe

    Mat. Res. Soc. Symp. Proc.   2001.7

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    DOI: 10.1557/PROC-664-A5.6

  • Behavior of a particle injected in ion sheath of electropositive and electronegative gas discharges International journal

    M. Shiratani, A. Toyozawa, K. Koga, Y. Watanabe

    Proc. Intern. Conf. on Phenomena in Ionized Gases   2001.7

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  • Clustering phenomena in low-pressure reactive plasma: base and applications (invited) International journal

    Y. Watanabe, M. Shiratani, K. Koga

    Proc. Intern. Symp. on Plasma Chemistry   2001.7

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  • Deposition of super high quality a-Si:H thin films using cluster-suppressed plasma CVD reactor International journal

    K. Koga, T. Sonoda, N. Shikatani, M. Shiratani, Y. Watanabe

    Proc. Intern. Conf. on Phenomena in Ionized Gases   2001.7

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  • Development of H-assisted plasma CVD reactor for Cu interconnects International journal

    M. Shiratani, H. J. Jin, K. Takenaka, K. Koga, T. Kinoshita, Y. Watanabe

    Proc. Intern. Conf. on Phenomena in Ionized Gases   2001.7

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  • Nucleation and subsequent growth of clusters in reactive plasma (invited) International journal

    Y. Watanabe, M. Shiratani, K. Koga

    Proc. Intern. Conf. on Phenomena in Ionized Gases   2001.7

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  • Formation kinetics and control of dust particles in capacitively-coupled reactive plasma (invited) Reviewed International journal

    Y. Watanabe, M. Shiratani, K. Koga

    Phys. Scripta   T89   2001.1

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    DOI: 10.1238/Physica.Topical.089a00029

  • Behavior of a particle injected in ion sheath International journal

    M. Shiratani, A. Toyozawa, K. Koga, Y. Watanabe

    Proc. of Plasma Science Symp. 2001/ 18th Symp. on Plasma Processing   2001.1

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  • Development of cluster-suppressed plasma CVD reactor for high quality a-Si:H film deposition International journal

    M. Shiratani, T. Sonoda, N. Shikatani, K. Koga, Y. Watanabe

    Proc. of Plasma Science Symp. 2001/ 18th Symp. on Plasma Processing   2001.1

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  • Effects of H2 dilution and excitation frequency on initial growth of clusters in silane plasma International journal

    K. Koga, K. Tanaka, M. Shiratani, Y. Watanabe

    Proc. Plasma Science Symp. 2001/ 18th Symp. on Plasma Processing   2001.1

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  • H assisted control of quality and conformality in Cu film deposition using plasma CVD method International journal

    M. Shiratani, H. J. Jin, K. Takenaka, K. Koga, T. Kinoshita, Y. Watanabe

    Proc. Advanced Metallization Conf. 2000   2001.1

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  • Measurements of surface reaction probability of SiH3 International journal

    M. Shiratani, N. Shiraishi, K. Koga, Y. Watanabe

    Proc. of Plasma Science Symp. 2001/ 18th Symp. on Plasma Processing   2001.1

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  • Plasma CVD method for Cu interconnects in ULSI (invited) International journal

    M. Shiratani, K. Koga, Y. Watanabe

    Proc. of Plasma Science Symp. 2001/ 18th Symp. on Plasma Processing   2001.1

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  • Methods of suppressing cluster growth in silane rf discharges Reviewed International journal

    M. Shiratani, S. Maeda, Y. Matsuoka, K. Tanaka, K. Koga, Y. Watanabe

    Mat. Res. Soc. Symp. Proc.   2000.7

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    DOI: 10.1557/PROC-609-A5.6

  • Deposition of smooth thin Cu films in deep submicron trench by plasma CVD reactor with H atom source Reviewed International journal

    H. J. Jin, M. Shiratani, Y. Nakatake, K. Koga, T. Kinoshita, Y. Watanabe

    Mat. Res. Soc. Symp. Proc.   2000.7

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    DOI: 10.1557/PROC-612-D9.2.1

  • Propagation characteristics of ion acoustic waves in an Ar/SF6 plasma Reviewed International journal

    R. Ichiki, M. Shindo, S. Yoshimura, K. Koga, Y. Kawai

    J. Phys. Soc. Jpn.   69 ( 6 )   2000.6

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    DOI: 10.1143/JPSJ.69.1925

  • Filling subquater-micron trench structure with high-purity copper using plasma reactor with H atom source Reviewed

    H. J. Jin, M. Shiratani, Y. Nakatake, K. Koga, T. Kinoshita, Y. Watanabe

    Res. Rep. ISEE Kyushu Univ.   5 ( 1 )   2000.3

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  • Growth processes of particles up to nanometer size in high-frequency SiH4 plasma Reviewed International journal

    Y. Watanabe, M. Shiratani, T. Fukuzawa, K. Koga

    Jour. Technical Phys.   41 ( 1 )   2000.1

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  • Observation of Asymmetric Sheath Structure in Multi-Component Plasma Containing Negative Ions Reviewed International journal

    K. Koga, H. Naitou, Y. Kawai

    J. Plasma Fusion Res.   2   1999.12

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  • Observation of Local Structures in Asymmetric Ion Sheath Reviewed International journal

    K. Koga, H. Naitou, Y. Kawai

    J. Phys. Soc. Jpn.   68 ( 5 )   1999.5

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    DOI: 10.1143/JPSJ.68.1578

  • Behavior of the Ion Sheath Instability in a Negative Ion Plasma Reviewed International journal

    K. Koga, Y. Kawai

    Jpn. J. Appl. Phys.   38 ( 3A )   1999.3

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    DOI: 10.1143/JJAP.38.1553

  • Capture and Conversion of CO2 from Ambient Air Using Ionic Liquid-Plasma Combination

    Sukma Wahyu Fitriani, Takamasa Okumura, Kunihiro Kamataki, Kazunori Koga, Masaharu Shiratani, Pankaj Attri

    Plasma Chemistry and Plasma Processing   2024.8   ISSN:0272-4324 eISSN:1572-8986

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    DOI: 10.1007/s11090-024-10500-9

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  • Capture and Conversion of CO<sub>2</sub> from Ambient Air Using Ionic Liquid-Plasma Combination

    Fitriani, SW; Okumura, T; Kamataki, K; Koga, K; Shiratani, M; Attri, P

    PLASMA CHEMISTRY AND PLASMA PROCESSING   2024.8   ISSN:0272-4324 eISSN:1572-8986

  • Effects of Supplied Gas on Plasma-Induced Liquid Flows

    Shen, KC; Shi, HP; Koga, K; Shiratani, M; Kawasaki, T

    IEEE TRANSACTIONS ON PLASMA SCIENCE   2024.8   ISSN:0093-3813 eISSN:1939-9375

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    Koga, K

    JAPANESE JOURNAL OF APPLIED PHYSICS   63 ( 8 )   2024.8   ISSN:0021-4922 eISSN:1347-4065

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    DOI: 10.35848/1347-4065/ad5d78

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  • Fundamental Study on Novel Biological Indicator Using DNA-Labeled Microbeads for Evaluating Nonthermal Plasma Sterilization

    Nakano, M; Okumura, T; Inaba, M; Attri, P; Koga, K; Shiratani, M; Suehiro, J

    IEEE SENSORS LETTERS   8 ( 8 )   2024.8   ISSN:2475-1472

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    Nonthermal atmospheric-pressure discharge plasma is considered important for sterilization. Reactive species, such as active oxygen species, radicals, and nitrate ions, generated by the discharge plasma damage the target bacterial cell wall/membrane and DNA. Several plasma sterilization methods have been proposed, including dielectric barrier discharge (DBD). To achieve effective sterilization, it is necessary to evaluate their characteristics using many parameters. This letter aims to demonstrate a proof-of-concept of a novel biological indicator for plasma sterilization. A biological indicator is used to verify sterilization outcomes. We employ DNA-labeled microbeads as biological indicators for the rapid visualization of plasma sterilization. This is based on our recently developed method for visual detection of DNA molecules. If plasma-derived factors cause the degradation of the DNA attached to the microbeads, this can be confirmed by visualization. Herein, we present the correlation between sterilization and visualization in the case of DBD. This method offers a rapid evaluation of plasma sterilization because it easily and quickly determines the sterilization capability of the plasma.

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  • Effect of nanoscale inhomogeneity on blocking temperature of ZnO:Co films fabricated by using nitrogen-mediated crystallization

    Marlis N. Agusutrisno, Takamasa Okumura, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani, Naoto Yamashita

    MRS Advances   2024.7   ISSN:2731-5894 eISSN:2059-8521

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    Diluted magnetic semiconductors (DMS) have attracted interest for the potential applications of spintronic devices. The origin of the temperature dependence of their ferromagnetism has been debated and has not been concluded yet. A potential conclusion is that nanoscale inhomogeneity largely affects the temperature dependence of the magnetization in DMS even if the structure and compositions are not largely different. We examined this hypothesis by implementing nitrogen-mediated crystallization consisting of sputtering deposition of amorphous film and solid-phase crystallization by thermal annealing. A series of samples with different inhomogeneities were prepared by changing the annealing time. No significant changes in the composition and the structure were observed after annealing for various times, while significant enhancements were observed in the coercivity, blocking temperature, and grain size. These results provide clear understanding in the temperature dependence of the ferromagnetism in DMS and direct evidence of the potential conclusion on the long-lasting debate. Graphical abstract: (Figure presented.)

    DOI: 10.1557/s43580-024-00907-z

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  • Deposition of hydrogenated amorphous carbon films by CH<sub>4</sub>/Ar capacitively coupled plasma using tailored voltage waveform discharges

    Otaka, M; Otomo, H; Ikeda, K; Lai, JS; Wakita, D; Kamataki, K; Koga, K; Shiratani, M; Nagamatsu, D; Shindo, T; Matsudo, T

    JAPANESE JOURNAL OF APPLIED PHYSICS   63 ( 7 )   2024.7   ISSN:0021-4922 eISSN:1347-4065

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    We investigated the effects of tailored voltage waveform (TVW) discharges on the deposition of hydrogenated amorphous carbon (a-C:H) films in CH4/Ar capacitively coupled plasma. TVW discharges employ two driving radio frequencies (13.56 MHz and 27.12 MHz) and control their phase shifts to independently regulate ion bombardment energy (IBE) and ion flux. In this study, a-C:H films were deposited by changing DC-self bias with phase shift and constant applied voltage peak-to-peak. Additionally, we investigated phase-resolved optical emission spectroscopy (PROES) for plasma characterization. As a result, plasma-enhanced CVD (PECVD) for a-C:H films using TVW discharges realize control of film properties such as mass density, sp3 fraction, and H content, while keeping the deposition rate constant. Thus, it is suggested that TVW discharges realize the independent control of IBE and ion flux with high accuracy, highlighting its utility in a-C:H film depositions.

    DOI: 10.35848/1347-4065/ad53b0

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  • Large-scale fabrication of thulium iron garnet film with perpendicular magnetic anisotropy using RF magnetron sputtering

    Marlis N. Agusutrisno, Sora Obinata, Takamasa Okumura, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani, Naoto Yamashita

    Japanese Journal of Applied Physics   63 ( 7 )   07SP06 - 07SP06   2024.7   ISSN:0021-4922 eISSN:1347-4065

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    Large-scale fabrication of thulium iron garnet (TmIG) films on gadolinium gallium garnet (GGG) substrates, with a total area of 25 cm<sup>2</sup>, has been demonstrated by rotating substrate holders during on-axis sputtering. By optimizing the growth parameters based on the pressure and flow rate of the oxygen ratio, a Tm/Fe ratio of 0.65 was obtained, which is close to the stoichiometry of TmIG. The increase in post-annealing temperature has induced the growth of the TmIG structure by the strain of the lattice constant mechanism. At the highest post-annealing temperature, the crystal structure of TmIG (444) and the perpendicular magnetic anisotropy (PMA) were obtained. This result demonstrates the potential method for large-scale fabrication of TmIG film with PMA.

    DOI: 10.35848/1347-4065/ad5aff

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  • Sputtering deposition of dense and low-resistive amorphous In2O3: Sn films under ZONE-T conditions of Thornton's structural diagram

    Yoshiharu Wada, Wafaa Magdy, Keigo Takeda, Yuta Mido, Naoto Yamashita, Takamasa Okumura, Kunihiro Kamataki, Kazunori Koga, Masaru Hori, Masaharu Shiratani, Naho Itagaki

    Applied Physics Letters   124 ( 24 )   2024.6   ISSN:0003-6951 eISSN:1077-3118

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    We have fabricated smooth-surfaced amorphous In2O3:Sn (a-ITO) films at a high temperature of 550 °C, far above the typical crystallization threshold of 150 °C for ITO films. This achievement has been made possible by intentionally introducing N2 into the sputtering atmosphere, which maintains a low N atom incorporation of only a few atomic percent within the films. Positioned within ZONE-T of the Thornton diagram (higher-temperature region characterized by high film density), our method allows the preparation of films with superior film density about 6.96 g/cm3, substantially exceeding the density of 6.58 g/cm3 for conventional a-ITO films fabricated under ZONE-1 (low-temperature region) and approaching the bulk crystal density of In2O3 at 7.12 g/cm3. The films also feature a high carrier density of 5 × 1020 cm−3 and a remarkably low resistivity of 3.5 × 10−4 Ω cm, comparable to those of polycrystalline films. The analysis via vacuum-ultraviolet absorption spectroscopy on N and O atom densities in the plasma suggests that amorphization is primarily caused not by N atoms incorporated in the films but by those temporally adsorbed on the film surface, inhibiting crystal nucleation before eventually desorbing. Our findings will pave the way not only for broader applications of a-ITO films but also for the design of other amorphous materials at temperatures beyond their crystallization points.

    DOI: 10.1063/5.0211090

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  • Sputter deposition of ZnO-AlN pseudo-binary amorphous alloys with tunable band gaps in the deep ultraviolet region

    Urakawa, S; Magdy, W; Wada, Y; Narishige, R; Kaneshima, K; Yamashita, N; Okumura, T; Kamataki, K; Koga, K; Shiratani, M; Itagaki, N

    MATERIALS RESEARCH EXPRESS   11 ( 6 )   2024.6   eISSN:2053-1591

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    ZnO-AlN pseudo-binary amorphous alloys (a-ZAON hereinafter) with tunable band gaps in the deep ultraviolet (DUV) region have been synthesized using magnetron sputtering. The miscibility gap between ZnO and AlN has been overcome using room-temperature sputtering deposition, leveraging the rapid quenching abilities of sputtered particles to fabricate metastable but single-phase alloys. X-ray diffraction patterns and optical transmittance spectra revealed that the synthesized films with chemical composition ratios of [Zn]/([Zn] + [Al]) = 0.24-0.79 likely manifested as single-phase of a-ZAON films. Despite their amorphous structures, these films presented direct band gaps of 3.4-5.8 eV and thus high optical absorption coefficients (105 cm−1). Notably, the observed values adhered to Vegard’s law for crystalline ZnO-AlN systems, implying that the a-ZAON films were solid solution alloys with atomic-level mixing. Furthermore, atomic force microscopy analyses revealed smooth film surfaces with root-mean-square roughness of 0.8-0.9 nm. Overall, the wide-ranging band gap tunability, high absorption coefficients, amorphous structures, surface smoothness, and low synthesis temperatures of a-ZAON films position them as promising materials for use in DUV optoelectronic devices and power devices fabricated using large-scale glass and flexible substrates.

    DOI: 10.1088/2053-1591/ad4f57

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  • Response of lettuce seeds undergoing dormancy break and early senescence to plasma irradiation

    Okumura, T; Anan, T; Shi, HP; Attri, P; Kamataki, K; Yamashita, N; Itagaki, N; Shiratani, M; Ishibashi, Y; Koga, K; Mildaziene, V

    APPLIED PHYSICS EXPRESS   17 ( 5 )   2024.5   ISSN:1882-0778 eISSN:1882-0786

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    This study reports the response of lettuce seeds undergoing dormancy breaking and early senescence to DBD plasma irradiation. A heat map of germination percentages at 12 h reveals that dormancy has broken at 39 days' storage, and that one minute of plasma irradiation enhances germination in dormant seeds. Plasma irradiation does not affect those seeds where dormancy has already broken. Early senescence via storage was estimated using ESR measurements and the molecular modification of quercetin. This study reveals that lettuce seed susceptibility to plasma irradiation depends on storage duration and conditions, with dormancy state as a critical variable modulating the impact of plasma irradiation.

    DOI: 10.35848/1882-0786/ad3798

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  • Plasma–ionic liquid-assisted CO2 capture and conversion: A novel technology

    Pankaj Attri, Kazunori Koga, Jamoliddin Razzokov, Takamasa Okumura, Kunihiro Kamataki, Tomohiro Nozaki, Masaharu Shiratani

    Applied Physics Express   17 ( 4 )   2024.4   ISSN:1882-0778 eISSN:1882-0786

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    The present study focused on CO2 capture, storage, and conversion through the innovative integration of plasma-ionic liquid (IL) technology. For the first time, we employed plasma-IL technology to confront climate change challenges. We utilized 1-Butyl-3-methylimidazolium chloride IL to capture and store CO2 under atmospheric pressure, and subsequently employed plasma to induce the transformation of IL-captured CO2 into CO. Furthermore, we performed computer simulations to enhance our understanding of the CO2 and CO capture processes of water and IL solutions. This comprehensive approach provides valuable insights into the potential of plasma-IL technology as a viable solution for climate change.

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  • Heavy fuel oil-contaminated soil remediation by individual and bioaugmentation-assisted phytoremediation with Medicago sativa and with cold plasma-treated M. sativa

    Žaltauskaitė J., Meištininkas R., Dikšaitytė A., Degutytė-Fomins L., Mildažienė V., Naučienė Z., Žūkienė R., Koga K.

    Environmental Science and Pollution Research   31 ( 20 )   30026 - 30038   2024.4   ISSN:09441344

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    Developing an optimal environmentally friendly bioremediation strategy for petroleum products is of high interest. This study investigated heavy fuel oil (HFO)-contaminated soil (4 and 6 g kg−1) remediation by individual and combined bioaugmentation-assisted phytoremediation with alfalfa (Medicago sativa L.) and with cold plasma (CP)-treated M. sativa. After 14 weeks of remediation, HFO removal efficiency was in the range between 61 and 80% depending on HFO concentration and remediation technique. Natural attenuation had the lowest HFO removal rate. As demonstrated by growth rate and biomass acquisition, M. sativa showed good tolerance to HFO contamination. Cultivation of M. sativa enhanced HFO degradation and soil quality improvement. Bioaugmentation-assisted phytoremediation was up to 18% more efficient in HFO removal through alleviated HFO stress to plants, stimulated plant growth, and biomass acquisition. Cold plasma seed treatment enhanced HFO removal by M. sativa at low HFO contamination and in combination with bioaugmentation it resulted in up to 14% better HFO removal compared to remediation with CP non-treated and non-bioaugmented M. sativa. Our results show that the combination of different remediation techniques is an effective soil rehabilitation strategy to remove HFO and improve soil quality. CP plant seed treatment could be a promising option in soil clean-up and valorization.

    DOI: 10.1007/s11356-024-33182-4

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  • Plasma-Driven Sciences: Exploring Complex Interactions at Plasma Boundaries

    Ishikawa, K; Koga, K; Ohno, N

    PLASMA   7 ( 1 )   160 - 177   2024.3   ISSN:2571-6182

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    Plasma-driven science is defined as the artificial control of physical plasma-driven phenomena based on complex interactions between nonequilibrium open systems. Recently, peculiar phenomena related to physical plasma have been discovered in plasma boundary regions, either naturally or artificially. Because laboratory plasma can be produced under nominal conditions around atmospheric pressure and room temperature, phenomena related to the interaction of plasma with liquid solutions and living organisms at the plasma boundaries are emerging. Currently, the relationships between these complex interactions should be solved using science-based data-driven approaches; these approaches require a reliable and comprehensive database of dynamic changes in the chemical networks of elementary reactions. Consequently, the elucidation of the mechanisms governing plasma-driven phenomena and the discovery of the latent actions behind these plasma-driven phenomena will be realized through plasma-driven science.

    DOI: 10.3390/plasma7010011

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  • Growth control of Marchantia polymorpha gemmae using nonthermal plasma irradiation

    Shoko Tsuboyama, Takamasa Okumura, Pankaj Attri, Kazunori Koga, Masaharu Shiratani, Kazuyuki Kuchitsu

    Scientific Reports   14 ( 1 )   3172   2024.2   ISSN:2045-2322 eISSN:2045-2322

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    Several studies have documented that treatment by cold atmospheric pressure plasma (CAPP) on plants foster seed germination and growth in recent years. However, the molecular processes that underlie the action of CAPP on the seeds and plants remain mostly enigmatic. We here introduce gemmae of Marchantia polymorpha, a basal liverwort, as a novel model plant material suitable for CAPP research. Treating the gemmae with CAPP for a constant time interval at low power resulted in consistent growth enhancement, while growth inhibition at higher power in a dose-dependent manner. These results distinctly demonstrate that CAPP irradiation can positively and negatively regulate plant growth depending on the plasma intensity of irradiation, offering a suitable experimental system for understanding the molecular mechanisms underlying the action of CAPP in plants.

    DOI: 10.1038/s41598-024-53104-1

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  • Improving the efficiency of CO2 methanation using a combination of plasma and molecular sieves

    Susumu Toko, Takamasa Okumura, Kunihiro Kamataki, Kosuke Takenaka, Kazunori Koga, Masaharu Shiratani, Yuichi Setsuhara

    Results in Surfaces and Interfaces   14   100204 - 100204   2024.2   ISSN:2666-8459

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    In recent years, the chemical reactions with plasma catalysis have been attracted attention. The interaction between plasma ant catalyst can wide the process window, realizing the low pressure and low temperature processes with various catalysts. However, the wide process range make it difficult to optimization for social implement. The key lies in elucidating the reaction mechanism, predicting reactions through numerical simulations, and deriving optimal conditions. On the other hand, recent research has suggested that the use of molecular sieves (MS) can improve methanation efficiency. This can be combined with catalysts, offering new potential applications of MS in chemical reactions. Here, we investigated the more efficient combination of plasma and MS and their reaction mechanisms. As a result, it was found that: 1. The use of MS reduces the oxidation source in the gas phase, leading to an increase in methanation efficiency by suppressing reverse reactions. 2. The adsorption effect of MS, which suppress the reverse reaction, increases with higher pressure. 3. MS in plasma decrease the energy in plasma decrease the energy within the plasma, reducing the CO2 decomposition rate due to electron impact.

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  • Influence of humidity on the plasma-assisted CO<inf>2</inf> conversion

    Pankaj Attri, Takamasa Okumura, Nozomi Takeuchi, Kunihiro Kamataki, Kazunori Koga, Masaharu Shiratani

    Plasma Processes and Polymers   21 ( 1 )   2024.1   ISSN:1612-8850 eISSN:1612-8869

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    The current research focuses on carbon dioxide (CO2) conversion at ambient conditions using streamer plasma. In this study, treatment time and humidity have been found to influence CO2 conversion. Our findings reveal a maximum CO2 conversion rate of 35.2%, achieved with a remarkably high energy efficiency of CO2 conversion at 135% and a low energy cost of 2.17 eV/molecule. We employed optical emission and fourier-transform infrared spectroscopy spectroscopy to analyze the different dissociation products of CO2 and determine the percentage of CO2 conversion. Furthermore, we utilized a two-dimensional (2D) fluid dynamics model and a zero-dimensional (0D) chemistry model to gain insights into the reactor mechanism.

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  • Fundamental Study of Carbon Dioxide Reduction Reaction with Plasma Catalysis

    Susumu TOKO, Takamasa OKUMURA, Kunihiro KAMATAKI, Kosuke TAKENAKA, Kazunori KOGA, Masaharu SHIRATANI, Yuichi SETSUHARA

    Journal of Smart Processing   13 ( 1 )   31 - 36   2024.1   ISSN:2186702X eISSN:21871337

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     Carbon dioxide reduction is one of the key technologies for achieving a sustainable society. In this study, plasma catalysis were used to hydrogenate carbon dioxide to produce methane. Plasma catalysis have attracted attention in recent years as a technology promoting a reaction at lower temperatures by various synergistic effects between plasma and catalysts. In this study, molecular sieve with a pore diameter of 3 Å was used as a catalyst and its role was investigated. The results showed that: 1. molecular and atomic adsorption functions of molecular sieves are useful to inhibit reverse reactions; 2. the influence of molecular sieves becomes stronger at higher pressures, resulting in higher methane production; 3. energetic reactive particles derived from hydrogen deactivate molecular sieves; 4. molecules adsorbed on molecular sieve can be recycled by hydrogen plasma irradiation.

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  • On-axis sputtering fabrication of Tm3Fe5O12 film with perpendicular magnetic anisotropy

    Marlis Nurut Agusutrisno, Christopher H. Marrows, Kunihiro Kamataki, Takamasa Okumura, Naho Itagaki, Kazunori Koga, Masaharu Shiratani, Naoto Yamashita

    Thin Solid Films   788   140176 - 140176   2024.1   ISSN:0040-6090 eISSN:1879-2731

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    Thulium iron garnet, Tm3Fe5O12 with perpendicular magnetic anisotropy is fabricated using an on-axis sputtering technique followed by annealing, whereas previous reports have used unusual off-axis geometries. Stoichiometric Tm3Fe5O12 is obtained after the modification of the deposition conditions involving the position of the substrate relative to the cathode, which affects both the chemical and structural properties. The effective perpendicular magnetic anisotropy of 8.6 kJ/m3 is well in line with the results of previous studies using pulse laser deposition and off-axis sputtering. A maze domain pattern is observed, and the domain-wall energy is evaluated as 0.69 mJ/m2.

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  • Subchronic toxicity study of indium-tin oxide nanoparticles following intratracheal administration into the lungs of rats

    Matsumura Nagisa, Tanaka Yu-ki, Ogra Yasumitsu, Koga Kazunori, Shiratani Masaharu, Nagano Kasuke, Tanaka Akiyo

    Journal of Occupational Health   66 ( 1 )   n/a   2024   ISSN:13419145 eISSN:13489585

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    <p><b>Objectives:</b> We aimed to analyze the subchronic toxicity and tissue distribution of indium after the intratracheal administration of indium-tin oxide nanoparticles (ITO NPs) to the lungs of rats.</p><p><b>Methods:</b> Male Wistar rats were administered a single intratracheal dose of 10 or 20 mg In/kg body weight (BW) of ITO NPs. The control rats received only an intratracheal dose of distilled water. A subset of rats was periodically euthanized throughout the study from 1 to 20 weeks after administration. Indium concentrations in the serum, lungs, mediastinal lymph nodes, kidneys, liver, and spleen as well as pathological changes in the lungs and kidneys were determined. Additionally, the distribution of ionic indium and indium NPs in the kidneys was analyzed using laser ablation-inductively coupled plasma mass spectrometry.</p><p><b>Results:</b> Indium concentrations in the lungs of the 2 ITO NP groups gradually decreased over the 20-week observation period. Conversely, the indium concentrations in the mediastinal lymph nodes of the 2 ITO groups increased and were several hundred times higher than those in the kidneys, spleen, and liver. Pulmonary and renal toxicities were observed histopathologically in both the ITO groups. Both indium NPs and ionic indium were detected in the kidneys, and their distributions were similar to the strong indium signals detected at the sites of inflammatory cell infiltration and tubular epithelial cells.</p><p><b>Conclusions:</b> Our results demonstrate that intratracheal administration of 10 or 20 mg In/kg BW of ITO NPs in male rats produces pulmonary and renal toxicities.</p>

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  • Capture and Conversion of CO<inf>2</inf> from Ambient Air Using Ionic Liquid-Plasma Combination

    Fitriani S.W., Okumura T., Kamataki K., Koga K., Shiratani M., Attri P.

    Plasma Chemistry and Plasma Processing   2024   ISSN:02724324

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    Climate change is considered one of the main challenges in this century, and CO2 emissions significantly cause it. Integrating CO2 capture, storage, and conversion is proposed to solve this problem. 1-Butyl-3-methylimidazolium chloride ([Bmim]Cl) ionic liquid was employed to capture and store CO2 from the air and subsequently converted into CO using non-thermal plasma. Moreover, we also tested the CO2 capture and storage capacity of water from different sources, e.g., Milli-Q, deionized water, and tap water. [Bmim]Cl solution captured CO2 from the air and then converted to CO after 24 h using plasma. In comparison with water (Milli-Q water, deionized water, and tap water), CO production was increased by 28.31% in the presence of water (Milli-Q water, deionized water, and tap water) + [Bmim]Cl. It suggests that this method could be a promising way to capture, store, and convert CO2 from air at atmospheric pressure and room temperature as an effort to reduce carbon emission.

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  • Health assessment of rice cultivated and harvested from plasma-irradiated seeds

    Takamasa Okumura, Hayate Tanaka, Takumi Nakao, Teruki Anan, Ryo Arita, Masaki Shiraki, Kayo Shiraki, Tomoyuki Miyabe, Daisuke Yamashita, Kayo Matsuo, Pankaj Attri, Kunihiro Kamataki, Naoto Yamashita, Naho Itagaki, Masaharu Shiratani, Satoshi Hosoda, Akiyo Tanaka, Yushi Ishibashi, Kazunori Koga

    Scientific Reports   13 ( 1 )   17450   2023.12   ISSN:2045-2322 eISSN:2045-2322

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    This study provides the health effects assessment of rice cultivated from plasma-irradiated seeds. The rice (Oryza sativa L.) cultivated from seeds with plasma irradiation showed a growth improvement (slope-ratios of with plasma to without plasma were 1.066, 1.042, and 1.255 for tiller, and earing, and ripening periods, respectively) and an 4% increase in yield. The cultivated rice was used for repeated oral administrations to mice for 4-week period. Distilled water and rice cultivated from seeds without plasma irradiation were also used as control. The weights of the lung, kidney, liver, and spleen, with corresponding average values of 0.22 g, 0.72 g, 2.1 g, and 0.17 g for w/ plasma group and 0.22 g, 0.68 g, 2.16 g, and 0.14 g for w/o plasma group, respectively, showing no effect due to the administration of rice cultivated from plasma-irradiated seeds. Nutritional status, liver function, kidney function, and lipid, neutral fat profiles, and glucose metabolism have no significant difference between with and without plasma groups. These results show no obvious subacute effects were observed on rice grains cultivated and harvested from the mother plant that experienced growth improvement by plasma irradiation. This study provides a new finding that there is no apparent adverse health effect on the grains harvested from the plasma-irradiated seeds.

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  • Highly selective Si<sub>3</sub>N<sub>4</sub> etching on Si using pulsed-microwave CH<sub>3</sub>F/O<sub>2</sub>/Ar plasma

    Morimoto, M; Matsui, M; Ikeda, N; Koga, K; Shiratani, M

    JAPANESE JOURNAL OF APPLIED PHYSICS   62 ( SN )   2023.11   ISSN:0021-4922 eISSN:1347-4065

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    Highly selective Si3N4 etching on Si was achieved in a CH3F/O2/Ar plasma using pulsed-microwave plasma and time-modulation bias. The Si3N4/Si selectivity reached infinity at a peak-to-peak voltage (V pp) of 240 V. The effect of pulsed-microwave on CH3F gas dissociation for highly selective Si3N4 etching was investigated by deposited film analysis, optical emission spectroscopy, and ion current flux measurements. As the duty cycle of the pulsed-microwave was decreased, the plasma density during the pulse on period decreased and the CH/H ratio increased. The pulsed-microwave plasma produced low-dissociation radicals by providing a low plasma density. The low-dissociation radicals in the CH3F plasma formed a fluorine (F)-rich hydrofluorocarbon (HFC) layer on the Si3N4 wafer surface. The F-rich HFC layer promotes Si3N4 etching even at low ion energy, where Si etching does not proceed, and enables highly selective Si3N4 etching on Si.

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  • Reaction kinetics studies for phenol degradation under the impact of different gas bubbles and pH using gas-liquid discharge plasma

    A. El-Tayeb, Takamasa Okumura, Pankaj Attri, Kunihiro Kamataki, Kazunori Koga, Masaharu Shiratani

    Japanese Journal of Applied Physics   62 ( SN )   2023.11   ISSN:0021-4922 eISSN:1347-4065

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    A gas-liquid discharge plasma (GLDP) reactor is used to degrade organic pollutants such as phenol. GLDP contains a 7-pin plate system used to enhance phenol degradation in the presence of various pH, and gas bubbles produced from air, O2, O3, CO2, and Ar gases. Experimental outcomes show the impact of solution pH, as phenol degradation efficiencies of 85%, 90%, 96%, and 98% were obtained for pH of 12, 9, 3, and 1, respectively, after 60 min of treatment. This shows that the optimum pH for phenol degradation lies between 1 and 3. Moreover, we explored the influence of gas bubbles generated using various gases, such as air, O2, O3, CO2, and Ar, on phenol degradation. In the presence of O3 gas bubbles, the rate and degree of phenol degradation were significantly increased compared to gas bubbles produced from other gases (O2, CO2, Ar, and air). The degradation competence of phenol by added oxygen remained higher than argon. The performance of the GLDP system at various pH values and gas bubbles was evaluated using kinetic models. Pseudo-zero, first and second reaction kinetics models were used to examine the degradation of phenol. The rate of degradation at different pH and in the presence of gas bubbles follows pseudo-zero-order kinetics. Our GLDP reactor consumed energy of 127.5 J l-1 for phenol degradation under the influence of air bubbles and pH 5. The outcome of this research can help in the design of new reactors for industrial wastewater treatment.

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  • Prediction by a hybrid machine learning model for high-mobility amorphous In<sub>2</sub>O<sub>3</sub>: Sn films fabricated by RF plasma sputtering deposition using a nitrogen-mediated amorphization method

    Kamataki, K; Ohtomo, H; Itagaki, N; Lesly, CF; Yamashita, D; Okumura, T; Yamashita, N; Koga, K; Shiratani, M

    JOURNAL OF APPLIED PHYSICS   134 ( 16 )   2023.10   ISSN:0021-8979 eISSN:1089-7550

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    In this study, we developed a hybrid machine learning technique by combining appropriate classification and regression models to address challenges in producing high-mobility amorphous In2O3:Sn (a-ITO) films, which were fabricated by radio-frequency magnetron sputtering with a nitrogen-mediated amorphization method. To overcome this challenge, this hybrid model that was consisted of a support vector machine as a classification model and a gradient boosting regression tree as a regression model predicted the boundary conditions of crystallinity and experimental conditions with high mobility for a-ITO films. Based on this model, we were able to identify the boundary conditions between amorphous and crystalline crystallinity and thin film deposition conditions that resulted in a-ITO films with 27% higher mobility near the boundary than previous research results. Thus, this prediction model identified key parameters and optimal sputtering conditions necessary for producing high-mobility a-ITO films. The identification of such boundary conditions through machine learning is crucial in the exploration of thin film properties and enables the development of high-throughput experimental designs.

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  • Silicon surface passivation with a-Si:H by PECVD: growth temperature effects on defects and band offset

    Nunomura, S; Sakata, I; Misawa, T; Kawai, S; Kamataki, K; Koga, K; Shiratani, M

    JAPANESE JOURNAL OF APPLIED PHYSICS   62 ( SL )   2023.9   ISSN:0021-4922 eISSN:1347-4065

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    The surface passivation of crystalline silicon (c-Si) is studied during growth of hydrogenated amorphous silicon (a-Si:H) by means of plasma-enhanced CVD. The surface passivation is characterized by an in situ method of the photocurrent measurement of c-Si during the growth of an a-Si:H passivation layer at various growth temperatures. The passivation is also characterized by an ex situ method of the carrier lifetime measurement performed at RT in air. According to both the in situ and ex situ characterization results, the surface passivation is optimized around a growth temperate of 200 °C, where the defect reduction and the band offset formation at the a-Si:H/c-Si interface play important roles.

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  • Contribution of active species generated in plasma to CO<inf>2</inf> methanation

    Susumu Toko, Taiki Hasegawa, Takamasa Okumura, Kunihiro Kamataki, Kosuke Takenaka, Kazunori Koga, Masaharu Shiratani, Yuichi Setsuhara

    Japanese Journal of Applied Physics   62 ( SL )   2023.9   ISSN:0021-4922 eISSN:1347-4065

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    CO2 methanation is an effective technology for CO2 reduction. Generally, methanation reactions are accelerated using thermal catalysts. However, the temperature control is difficult because CO2 methanation is an exothermic reaction, and the catalyst is deactivated by overheating. Plasma catalysis can solve this problem by driving this reaction at lower temperatures. Therefore, in this study, we investigated the contribution of the active species generated in the plasma to CO2 methanation. We found that the density of active species is linearly related to the power density, and in particular, the CH4 generation rate is determined by the CO-derived active species, not the H-derived active species. Furthermore, with an increase in the catalyst temperature, a new reaction pathway for CH4 production is added. The results of this study contribute to the understanding of the relationship between the active species produced in plasma and CO2 methanation.

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  • Single-step fabrication of fibrous Si/Sn composite nanowire anodes by high-pressure He plasma sputtering for high-capacity Li-ion batteries Reviewed

    Giichiro Uchida, Kodai Masumoto, Mikito Sakakibara, Yumiko Ikebe, Shinjiro Ono, Kazunori Koga, Takahiro Kozawa

    Scientific Reports   13 ( 1 )   14280   2023.9   ISSN:2045-2322 eISSN:2045-2322

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    Single-step fabrication of fibrous Si/Sn composite nanowire anodes by high-pressure He plasma sputtering for high-capacity Li-ion batteries
    Abstract

    To realize high-capacity Si anodes for next-generation Li-ion batteries, Si/Sn nanowires were fabricated in a single-step procedure using He plasma sputtering at a high pressure of 100–500 mTorr without substrate heating. The Si/Sn nanowires consisted of an amorphous Si core and a crystalline Sn shell. Si/Sn composite nanowire films formed a spider-web-like network structure, a rod-like structure, or an aggregated structure of nanowires and nanoparticles depending on the conditions used in the plasma process. Anodes prepared with Si/Sn nanowire films with the spider-web-like network structure and the aggregated structure of nanowires and nanoparticles showed a high Li-storage capacity of 1219 and 977 mAh/g, respectively, for the initial 54 cycles at a C-rate of 0.01, and a capacity of 644 and 580 mAh/g, respectively, after 135 cycles at a C-rate of 0.1. The developed plasma sputtering process enabled us to form a binder-free high-capacity Si/Sn-nanowire anode via a simple single-step procedure.

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  • Influence of electric potential-induced by atmospheric pressure plasma on cell response

    Takamasa Okumura, Chia-Hsing Chang, Kazunori Koga, Masaharu Shiratani, Takehiko Sato

    Scientific Reports   13 ( 1 )   15960   2023.9   ISSN:2045-2322 eISSN:2045-2322

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    Plasma irradiation leads not only active species, but also reactive chemical species, ultraviolet light, electric fields, magnetic fields, and shock waves. To date the effects of reactive chemical species have been mainly discussed. To understand the biological effect caused by an electric potential induced with an atmospheric-pressure plasma, the behavior of cell stimulated by electric potential was investigated using HeLa cell. The cell concentration assay revealed that less than 20% of cells inactivated by potential stimulation and the remained cells proliferate afterward. Fluorescent microscopic observation revealed that potential stimulation is appreciable to transport the molecules through membrane. These results show that potential stimulation induces intracellular and extracellular molecular transport, while the stimulation has a low lethal effect. A possible mechanism for this molecular transport by potential stimulation was also shown using numerical simulation based on an equivalent circuit of the experimental system including adhered HeLa cell. The potential formation caused by plasma generation is decisive in the contribution of plasma science to molecular biology and the elucidation of the mechanism underlying a biological response induction by plasma irradiation.

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  • Low-temperature fabrication of silicon nitride thin films from a SiH4+N2 gas mixture by controlling SiNx nanoparticle growth in multi-hollow remote plasma chemical vapor deposition

    Kamataki, K; Sasaki, Y; Nagao, I; Yamashita, D; Okumura, T; Yamashita, N; Itagaki, N; Koga, K; Shiratani, M

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   164   2023.9   ISSN:1369-8001 eISSN:1873-4081

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    High-quality amorphous silicon nitride (SiNx) thin films were fabricated by the controlled growth of nanoparticles during SiH4+N2 multi-hollow remote plasma chemical vapor deposition (CVD) at low substrate temperature 100 °C. Measurements from quartz crystal microbalances showed that a higher amount of nanoparticle incorporation in the SiNx film corresponded to a higher ratio of N/Si in the film, implying that the nanoparticles were nitrided in the plasma phase. We controlled the size of the nanoparticles by tuning the gas flow ratio of N2/SiH4 and the total gas flow rate. Transmission electron microscopy and energy-dispersive X-ray spectroscopy showed that smaller nanoparticles in the plasma led to a higher ratio of N/Si in the film and a lower hydrogen content. We attribute these results to the low heat capacity and large specific surface area of the nanoparticles, which enabled active chemical reactions on their surface in the plasma.

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  • Control of inhomogeneity and magnetic properties of ZnO:Co films grown by magnetron sputtering using nitrogen

    Agusutrisno, MN; Narishige, R; Kamataki, K; Okumura, T; Itagaki, N; Koga, K; Shiratani, M; Yamashita, N

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   162   2023.8   ISSN:1369-8001 eISSN:1873-4081

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    We experimentally report the control of structural inhomogeneity and magnetic properties of Co-doped ZnO films using nitrogen mediated-crystallization. The ZnO:CoN were grown on a silicon substrate at room temperature by RF-magnetron sputtering using nitrogen and followed by a post-annealing treatment for 3 hours at 400 °C, 600 °C, 800 °C and 1000 °C in the air. This method induces changes in inhomogeneity properties comprised by microstructure and stoichiometry of each film, which are confirmed by X-ray diffraction, thermal desorption, and X-ray fluorescence measurements. The difference in inhomogeneity has led to the transformation in the magnetic properties. Films annealed at 400 °C, which showed the highest inhomogeneity, exhibited superparamagnetic-ferromagnetic properties. In contrast, all the other films exhibited diamagnetic properties. Increasing the post-annealing temperature above 400 °C reduces inhomogeneities indicated by improved grain size, decreased impurities, and lattice parameters and stoichiometry of ZnO:CoN films approached those of pure ZnO. Our present results will contribute to control the inhomogeneity of ZnO:Co films to improve magnetic properties at room temperature.

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  • Improving the efficiency of Sabatier reaction through H2O removal with low-pressure plasma catalysis

    Taiki Hasegawa, Susumu Toko, Kunihiro Kamataki, Kazunori Koga, Masaharu Shiratani

    Japanese Journal of Applied Physics   62 ( SL )   SL1028 - SL1028   2023.8   ISSN:0021-4922 eISSN:1347-4065

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    This study aimed to realize in situ resource utilization in deep-space missions. The Sabatier reaction is used to generate CH<sub>4</sub> from CO<sub>2</sub>, which accounts for 95% of the Martian atmosphere, and H<sub>2</sub> from H<sub>2</sub>O on Mars. In general, thermal catalysis at temperatures above 250 °C drives the process. This high-temperature process, however, causes catalyst deactivation due to overheating. Plasma catalysis drives low-temperature reactions by excitation and decomposition of source gases via electron impact. We investigated the effect of removing H<sub>2</sub>O from gas phase in the reaction with Cu and Ni catalysts using molecular sieves in this study. The reverse reaction can be aided by OH radicals derived from H<sub>2</sub>O. Therefore, CO<sub>2</sub> conversion increased from 49.4% to 69.1% for Cu catalysts with molecular sieves, and CH<sub>4</sub> selectivity increased from 3.49% to 6.33%. These findings imply that removing H<sub>2</sub>O can suppress the reverse reactions.

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  • Plasma-assisted CO<inf>2</inf> and N<inf>2</inf> conversion to plant nutrient

    Pankaj Attri, Takamasa Okumura, Nozomi Takeuchi, Kunihiro Kamataki, Kazunori Koga, Masaharu Shiratani

    Frontiers in Physics   11   2023.7   ISSN:2296-424X eISSN:2296-424X

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    Colossal research on CO2 and N2 conversion using non-thermal plasma (NTP) technology has been ongoing since many years. The primary focus is on CO and NH3 production through CO2 and N2 conversion, respectively, with high conversion efficiency and low energy consumption with or without catalysts. Although in the present study, we propose that the NTP can assist in converting CO2 and N2 to plant nutrients in the form of plasma-treated/activated water. We used a homemade streamer plasma device and produced plasma-activated water (PAW) using CO2 and N2 feed gas, CO2-activated water (CAW) and N2-activated water (NAW). Later, we used CAW and NAW to treat the radish seeds and evaluate the germination rate, germination percentage, and seeding growth. To understand the chemical changes in PAW after the NTP treatment, we performed a chemical analysis to detect NO2¯, NO3¯, NH4+, and H2O2 along with the PAW pH and temperature shift. Additionally, to understand the other species produced in the gas phase, we simulated chemical reactions using COMSOL Multiphysics® software. Our results show that NOx and NHx species are less produced in CAW than in NAW, but CO2-generated PAW offers a significantly more substantial effect on enhancing the germination rate and seeding growth than NAW. Therefore, we suggested that CO and H2O2 formed during CAW production trigger early germination and growth enhancement. Furthermore, the total plasma reactor energy consumption, NO3¯ and NH4+ selective production percentage, and N2 conversion percentage were calculated. To our best knowledge, this is the first study that uses plasma-assisted CO2 conversion as a nutrient for plant growth.

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  • Effect of time-modulation bias on polysilicon gate etching

    Morimoto, M; Tanaka, M; Koga, K; Shiratani, M

    JAPANESE JOURNAL OF APPLIED PHYSICS   62 ( SI )   2023.7   ISSN:0021-4922 eISSN:1347-4065

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    The etching characteristics were studied via time-modulation bias (bias pulsing) by varying the pulsing parameters. The etch profiles were verified using polysilicon gate structures with dense and isolated patterns. Ion energy was defined as the peak-to-peak voltage (V pp) controlled by the RF bias power. The durations of the on period and off period (off time) of bias pulsing were adjusted by the pulse frequency and duty cycle. Profile evolution was observed in the variations in V pp and off time. Increasing the ion energy induced vertical profiles of dense patterns and the tapered profiles of isolated patterns. Extending the off time of bias pulsing induced tapered profiles of dense patterns and vertical profiles of isolated patterns. These results indicated that increasing the ion energy and pulse off time simultaneously was the direction to achieve anisotropic etch profiles for both the isolated and dense patterns.

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  • Optical emission spectroscopy study in CO<inf>2</inf> methanation with plasma

    Susumu Toko, Taiki Hasegawa, Takamasa Okumura, Kunihiro Kamataki, Kosuke Takenaka, Kazunori Koga, Masaharu Shiratani, Yuichi Setsuhara

    Japanese Journal of Applied Physics   62 ( SI )   2023.7   ISSN:0021-4922 eISSN:1347-4065

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    Methanation of CO2 is a key technology to realize a sustainable society. The reactions should be driven at a lower temperatures from the viewpoint of catalyst stability. Methanation with plasma catalysis can drive reactions at lower temperature than thermal catalysis. However, the reaction mechanism is little understood due to the complexity of the interactions. In this study, we investigated the power and pressure dependence of the methanation efficiency when only plasma is used as a fundamental research. We discuss how these parameters change the vibrational temperature and active species density and affect the methanation efficiency using optical emission spectroscopy.

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  • Instant switching control between two types of plasma-driven liquid flows Reviewed

    Toshiyuki Kawasaki, Kecheng Shen, Heping Shi, Kazunori Koga, Masaharu Shiratani

    Japanese Journal of Applied Physics_Rapid Communication   62 ( 6 )   060904-1 - 060904-4   2023.6   ISSN:0021-4922 eISSN:1347-4065

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    Plasma-driven liquid flows that are generated in bulk liquid by plasma irradiation are one of the key factors in understanding the interaction between plasma and liquid. In this work, the direction of the plasma-driven liquid flow was successfully switched and controlled only by changing the frequency of argon plasma jet generation. The liquid flow could switch in the opposite direction within 3 s after the frequency change. Changes in the emission spectra with frequency have an important effect on the liquid flows, with results from current waveforms indicating that the frequency also changes the characteristics of the plasma jet.

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  • Cold Plasma-Induced Changes in <i>Stevia rebaudiana</i> Morphometric and Biochemical Parameter Correlations

    Judickaite, A; Venckus, J; Koga, K; Shiratani, M; Mildaziene, V; Zukiene, R

    PLANTS-BASEL   12 ( 8 )   2023.4   ISSN:2223-7747

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    Stevia rebaudiana Bertoni is an economically important source of natural low-calorie sweeteners, steviol glycosides (SGs), with stevioside (Stev) and rebaudioside A (RebA) being the most abundant. Pre-sowing seed treatment with cold plasma (CP) was shown to stimulate SGs biosynthesis/accumulation up to several fold. This study aimed to evaluate the possibility to predict CP-induced biochemical changes in plants from morphometric parameters. Principle component analysis (PCA) was applied to two different sets of data: morphometric parameters versus SGs concentrations and ratio, and morphometric parameters versus other secondary metabolites (total phenolic content (TPC), total flavonoid content (TFC)) and antioxidant activity (AA). Seeds were treated for 2, 5 and 7 min with CP (CP2, CP5 and CP7 groups) before sowing. CP treatment stimulated SGs production. CP5 induced the highest increase of RebA, Stev and RebA+Stev concentrations (2.5-, 1.6-, and 1.8-fold, respectively). CP did not affect TPC, TFC or AA and had a duration-dependent tendency to decrease leaf dry mass and plant height. The correlation analysis of individual plant traits revealed that at least one morphometric parameter negatively correlates with Stev orRebA+Stev concentration after CP treatment.

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  • Effects of plasma-activated Ringer's lactate solution on cancer cells: evaluation of genotoxicity

    Liu, Y; Nakatsu, Y; Tanaka, H; Koga, K; Ishikawa, K; Shiratani, M; Hori, M

    GENES AND ENVIRONMENT   45 ( 1 )   3   2023.1   ISSN:1880-7046 eISSN:1880-7062

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    Background: Non-thermal atmospheric pressure plasma technologies form the core of many scientific advances, including in the electronic, industrial, and biotechnological fields. The use of plasma as a cancer therapy has recently attracted significant attention due to its cancer cell killing activity. Plasma-activated Ringer’s lactate solution (PAL) exhibits such activity. In addition to ROS, PAL contains active compounds or species that cause cancer cell death, but the potential mutagenic risks of PAL have not been studied. Results: PAL has a low pH value and a high concentration of H2O2. H2O2 was removed from PAL using catalase and catalase-treated PAL with a pH of 5.9 retained a killing effect on HeLa cells whereas this effect was not observed if the PAL was adjusted to pH 7.2. Catalase-treated PAL at pH 5.9 had no significant effect on mutation frequency, the expression of γH2AX, or G2 arrest in HeLa cells. Conclusion: PAL contains one or more active compounds or species in addition to H2O2 that have a killing effect on HeLa cells. The compound(s) is active at lower pH conditions and apparently exhibits no genotoxicity. This study suggested that identification of the active compound(s) in PAL could lead to the development of novel anticancer drugs for future cancer therapy.

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  • Editorial: Prospects of plasma generated species interaction with organic and inorganic materials

    Pankaj Attri, Kazunori Koga, Hirofumi Kurita, Kenji Ishikawa, Masaharu Shiratani

    Frontiers in Physics   10   2023.1   ISSN:2296-424X eISSN:2296-424X

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  • Role of insoluble atoms in the formation of a three-dimensional buffer layer in inverted Stranski–Krastanov mode

    Naoto Yamashita, Ryo Mitsuishi, Yuta Nakamura, Keigo Takeda, Masaru Hori, Kunihiro Kamataki, Takamasa Okumura, Kazunori Koga, Masaharu Shiratani

    Journal of Materials Research   38 ( 5 )   1178 - 1185   2023.1   ISSN:0884-2914 eISSN:2044-5326

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    The inverted Stranski–Krastanov (SK) mode is useful for heteroepitaxial growth of single-crystalline ZnO films on 18% lattice-mismatched sapphire substrates. We studied the role of nitrogen atoms during fabrication of a three-dimensional island-shaped buffer layer. We found an unprecedented maximum in the substrate temperature dependence of the density of the crystal grains, which facilitated the growth of flat ZnO layers. To reveal the mechanism of the aforementioned maximum, we measured the absolute N atom density in Ar/N2 sputtering plasma [N]plasma by vacuum-ultraviolet absorption spectroscopy. At [N]plasma = 2.2 × 1010 cm−3, we fabricated a ZnO film with a pit-free surface, attributable to the large surface reaction probability and small incorporation ratio of N atoms into the ZnO films. To describe these results, we applied an Ising model. The analytical calculations provide insights for inverted SK mode and clearly reveal the critical effects of the flux densities. Graphical abstract: [Figure not available: see fulltext.]

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  • プラズマ活性化乳酸リンゲル液が癌細胞に及ぼす影響 遺伝毒性の評価(Effects of plasma-activated Ringer's lactate solution on cancer cells: evaluation of genotoxicity)

    Liu Yang, Nakatsu Yoshimichi, Tanaka Hiromasa, Koga Kazunori, Ishikawa Kenji, Shiratani Masaharu, Hori Masaru

    Genes and Environment   45   1 of 10 - 10 of 10   2023.1   ISSN:1880-7046

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    プラズマ活性化乳酸リンゲル液(PAL)の細胞障害性と遺伝毒性について検討した。pHが低く高濃度のH2O2を含有するPALから、カタラーゼを用いてH2O2を除去した。その結果、PALのpHは5.6以下から5.9に上昇し、これらのカタラーゼ処理したPALではHeLa細胞に対する殺細胞効果が保持されていたが、カタラーゼ処理したPALのpHを7.2に調整すると効果が消失した。だが、カタラーゼ処理したpH5.9のPALには、HeLa細胞における変異頻度やγH2AX発現およびG2期停止に対し有意な作用を観察されなかった。以上より、今回の実験結果から、PALはH2O2以外にもHeLa細胞に対し殺細胞効果をもたらす1種類以上の活性化合物や活性種が含有されていることが明らかにされた。また、これらの物質は低pH条件下で活性化し遺伝毒性は有さないことから、PAL中の活性物質を同定することにより、抗癌剤の新薬開発に繋がることが期待された。

  • Stress reduction of a-C:H films with inserting submonolayer of carbon nanoparticles

    Shiratani Masaharu, Ono Shinjiro, Eri Manato, Okumura Takamasa, Kamataki Kunihiro, Yamashita Naoto, Kiyama Haruki, Itagaki Naho, Koga Kazunori

    Abstract book of Annual Meeting of the Japan Society of Vacuum and Surface Science   2023 ( 0 )   1Ga06   2023   eISSN:24348589

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    <p>Amorphous carbon (a-C(:H)) thin films have been studied in a wide range of fields as protective films for automotive parts, hard masks for semiconductor device fabrication, and biocompatible films for medical devices due to their excellent characteristics. In particular, mechanical properties (film stress and fracture toughness) related to film delamination are important because they are related to the durability of the films, which in turn are related to film stress and adhesion strength. Recently, we have shown that the introduction of carbon nanoparticles (CNPs) between two layers of a-C:H thin films reduces film stress[1]. In this study, we evaluated other properties of the CNP-inserted sample and examined the effect of CNPs on the mechanical properties of the film toward the practical stage.</p><p>Sandwich structure films were fabricated using a capacitively coupled plasma-enhanced chemical vapor deposition (PECVD) system [1]. Ar and CH4 gases were introduced from the top at 19 sccm and 2.6 sccm, respectively. The thickness of the first and second layers was 154 nm. For the nanoindentation test, a nanoindentation tester (ENT-1100a) was employed and a Berkovich indenter was used.</p><p></p><p>The load-unloading curve by nano-indentation showed a typical curve at 5 mN, and a step in the curve occurred at over 8 mN, and SEM images of the indentation showed that the membrane peeled off in a circular shape when the step occurred. EDS analysis of the peel scar revealed that the peel occurred at the interface between the first and second layers. In addition, the fracture toughness of the film was determined from the SEM images of the delamination traces and the load-unloading curve at the time of step generation, and it decreased with increasing Cp in the region where the film stress was constant for the CNP coverage. These results suggest that CNP coverage has a negative correlation with fracture toughness and that there is an optimum value for improving mechanical properties. Other properties will be discussed in detail in the presentation.</p><p></p><p>[1] S.H. Hwang et al., Jpn. J. Appl. Phys. 59 100906, (2020).</p>

    DOI: 10.14886/jvss.2023.0_1ga06

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  • Role of Direct Plasma Irradiation, Plasma-Activated Liquid, and Plasma-Treated Soil in Plasma Agriculture

    Attri P., Okumura T., Takeuchi N., Razzokov J., Zhang Q., Kamataki K., Shiratani M., Koga K.

    Plasma Medicine   13 ( 3 )   33 - 52   2023   ISSN:19475764

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    Seed treatment with non-thermal plasma has seen a tremendous increase in both direct and indirect applications recently. In this review, we examined the effects of direct plasma irradiation, plasma-activated water (PAW), plasma-activated Ringer’s lactate solution, and plasma-treated soil on seeds, resulting in positive, negative, and neutral changes. Furthermore, we will compare the impact of pressure and feed gases on seed germination and seedling growth. Addition-ally, we focused on the types of reactive oxygen and nitrogen species (RONS) and their concentrations produced in the gas and liquid phases, as these play a crucial role in germination percentage and seedling growth. In conclusion, we find that plasma agriculture’s success is contingent on seed morphology, the types and concentrations of reactive species, and specific plasma characteristics.

    DOI: 10.1615/PlasmaMed.2023050454

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  • One-dimensional particle-in-cell/Monte Carlo collision simulation for investigation of amplitude modulation effects in RF capacitive discharges

    Iori Nagao, Kunihiro Kamataki, Akihiro Yamamoto, Michihiro Otaka, Yuma Yamamoto, Daisuke Yamashita, Naoto Yamashita, Takamasa Okumura, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    MRS Advances   7 ( 31 )   911 - 917   2022.12   ISSN:2731-5894 eISSN:2059-8521

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    We have investigated the effects of amplitude modulation (AM) discharges especially in differences of AM frequency on plasma parameters such as electric field, electron density, electron temperature, ion energy distribution function (IEDF), and ion angular distribution function (IADF) of capacitively coupled AM discharge Ar plasma using a Particle-in-cell/Monte Carlo collision (PIC-MCC) model. The electron density and the kinetic energy of ions incident on the grounded electrode oscillate periodically with the AM frequency. The oscillation amplitude of the electron density in the central plasma region between the electrodes decreases with increasing the AM frequency above 5 kHz. On the other hand, the peak energy of IEDF decreases with increasing the AM frequency above 500 kHz. Thus, the AM frequency is a good tuning knob to control such plasma parameters.

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  • Effects of substrate surface polarity on heteroepitaxial growth of pseudobinary ZnO–InN alloy films on ZnO substrates

    Ryota Narishige, Naoto Yamashita, Kunihiro Kamataki, Takamasa Okumura, Kazunori Koga, Masaharu Shiratani, Hisato Yabuta, Naho Itagaki

    Journal of Materials Research   38 ( 7 )   1803 - 1812   2022.11   ISSN:0884-2914 eISSN:2044-5326

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    (ZnO)X(InN)1-X films have been epitaxially grown on 0.9%-lattice-mismatched ZnO substrates at 450 °C by sputtering. Films fabricated on O-polar substrates exhibit higher crystal quality and smoother surface. The full width at half-maximum of (0002) rocking curve and the root-mean-square roughness (Rq) of a 30-nm-thick film on O-polar surface are 0.21° and 2.71 nm, respectively, whereas those on Zn-polar one are 0.32° and 4.30 nm, respectively. Rq on O-polar surface further decreases to 0.73 nm as the thickness decreases to 10 nm, where we successfully obtained atomically flat single-crystalline films having atomically sharp interface with the substrates. High-resolution transmission electron microscopy revealed the Stranski–Krastanov (layer plus island) growth for O-polar case and just 3D islanding mode growth for Zn-polar one. All the results indicate the much longer migration length of adatoms on O-polar surface during the film growth, enabling adatoms to reach their thermodynamically favored positions even at low substrate temperature. Graphical abstract: [Figure not available: see fulltext.]

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  • Raman spectral analysis of the as-deposited a-C:H films prepared by CH4+ Ar plasma CVD

    Shinjiro Ono, Sung Hwa Hwang, Takamasa Okumura, Kunihiro Kamataki, Naoto Yamashita, Naho Itagaki, Kazunori Koga, Masaharu Shiratani, Jun-Seok Oh, Susumu Takabayashi, Tatsuyuki Nakatani

    MRS ADVANCES   7 ( 30 )   718 - 722   2022.11   ISSN:2731-5894 eISSN:2059-8521

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    Applicability of precise Raman spectral analysis of a-C:H films deposited using a plasma chemical vapor deposition (CVD) method has been discussed based on the sensitivity to initial conditions in peak separation. The spectral analysis offers to deconvolute the spectra into five peaks, while the as-deposited films prepared by plasma CVD is difficult to the five-peak separation. We found the peak position and the peak height ratio of the D-band to the G(+)-band can be employed to discuss the structure of the as-deposited films. We examined the structural difference between the films deposited at the powered electrode and that at grounded electrode. We found graphene nanoribbon-like structures may be formed in the films deposited on the grounded substrate. This result suggests that the substrate position is an important factor to form the graphene nanoribbon-like structure.

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  • Effects of amplitude modulated capacitively coupled discharge Ar plasma on kinetic energy and angular distribution function of ions impinging on electrodes: particle-in-cell/Monte Carlo collision model simulation

    Kohei Abe, Kunihiro Kamataki, Akihiro Yamamoto, Iori Nagao, Michihiro Otaka, Daisuke Yamashita, Takamasa Okumura, Naoto Yamashita, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    Japanese Journal of Applied Physics   61 ( 10 )   106003 - 106003   2022.9   ISSN:0021-4922 eISSN:1347-4065

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    We investigated the effects of amplitude modulated (AM) capacitively coupled Ar discharge plasma on the ion energy distribution function (IEDF) and the ion angular distribution function (IADF) incident on electrodes using the particle-in-cell/Monte Carlo collision model. For AM discharge, the electron density and electron temperature and the kinetic energy and angle of ions incident on the ground electrode change periodically with AM frequency, whereas ones for continuous wave discharge are almost constant. For AM discharge, the plasma had hysteresis characteristics. The peak energy of IEDF varies from 53 to 135 eV and the FWHM of IADF varies from 1.82 to 3.34 degrees for gas pressure 10mTorr, the peak-to-peak input voltage 400 V and AM level of 50%. The variation width of the peak energy of IEDF and FWHM of IADF increases with the AM level. These effects of AM method discharge are more noticeable at lower pressures. Thus, the AM discharge offers a way to control simultaneously IEDF and IADF, which opens a new avenue for plasma processes such as an ALD-like PECVD.

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  • Effects of amplitude modulated discharge on growth of nanoparticles in TEOS/O<sub>2</sub>/Ar capacitively coupled plasma

    Kamataki, K; Nagamatsu, D; Yang, T; Abe, K; Yamamoto, A; Nagao, I; Arima, T; Otaka, M; Yamamoto, Y; Yamashita, D; Okumura, T; Yamashita, N; Itagaki, N; Koga, K; Shiratani, M

    AIP ADVANCES   12 ( 8 )   2022.8   eISSN:2158-3226

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    We investigate the effects of the amplitude modulation (AM) discharge method on the growth of nanoparticles and the relation between growth of nanoparticles and plasma generation in tetraethylorthosilicate (TEOS)/O2/Ar plasma. The laser-light scattering (LLS) intensity, which is proportional to the density and the sixth power of the size of nanoparticles in the Rayleigh scattering regime, decreases by 18% at an AM level of 10% and by 60% at an AM level of 50%. On the other hand, the ArI emission intensity, which is roughly proportional to plasma density, is higher than that for the continuous wave discharge. Thus, AM discharges suppress growth of nanoparticles in TEOS plasma. We have shown oscillations of the axial electric field Ez with the AM frequency for AM discharge by electric field measurement using an electro-optic probe. We have discussed that these fluctuations of Ez mainly lead to the vertical oscillation of the levitation position of nanoparticles trapped in the plasma sheath boundary region by taking into account the force balance equation in the axial direction on these negatively charged nanoparticles.

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  • Effects of amplitude modulated discharge on growth of nanoparticles in TEOS/O2/Ar capacitively coupled plasma

    Kamataki Kunihiro, Nagamatsu Daiki, Yang Tao, Abe Kohei, Yamamoto Akihiro, Nagao Iori, Arima Toshiaki, Otaka Michihiro, Yamamoto Yuma, Yamashita Daisuke, Okumura Takamasa, Yamashita Naoto, Itagaki Naho, Koga Kazunori, Shiratani Masaharu

    AIP Advances   12 ( 8 )   2022.8   eISSN:21583226

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  • Changes in Content of Bioactive Compounds and Antioxidant Activity Induced in Needles of Different Half-Sib Families of Norway Spruce (<i>Picea abies</i> (L.) H. Karst) by Seed Treatment with Cold Plasma

    Sirgedaite-Seziene, V; Lucinskaite, I; Mildaziene, V; Ivankov, A; Koga, K; Shiratani, M; Lauzike, K; Baliuckas, V

    ANTIOXIDANTS   11 ( 8 )   2022.8   ISSN:2076-3921 eISSN:2076-3921

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    In order to ensure sufficient food resources for a constantly growing human population, new technologies (e.g., cold plasma technologies) are being developed for increasing the germination and seedling growth without negative effects on the environment. Pinaceae species are considered a natural source of antioxidant compounds and are valued for their pharmaceutical and nutraceutical properties. In this study, the seeds of seven different Norway spruce half-sib families were processed for one or two minutes with cold plasma (CP) using dielectric barrier discharge (DBD) plasma equipment. At the end of the second vegetation season, the total flavonoid content (TFC), DPPH (2,2- diphenyl-1-picryl-hydrazyl-hydrate), and ABTS (2,2’-azino-bis (3-ethylbenzothiazoline-6-sulfonic acid)) antioxidant activity, and the amounts of six organic acids (folic, malic, citric, oxalic, succinic, and ascorbic) were determined in the needles of different half-sib families of Norway spruce seedlings. The results show that the TFC, antioxidant activity, and amounts of organic acids in the seedling needles depended on both the treatment duration and the genetic family. The strongest positive effect on the TFC was determined in the seedlings of the 477, 599, and 541 half-sib families after seed treatment with CP for 1 min (CP1). The TFC in these families increased from 118.06 mg g−1 to 312.6 mg g−1 compared to the control. Moreover, seed treatment with CP1 resulted in the strongest increase in the antioxidant activity of the needles of the 541 half-sib family seedlings; the antioxidant activity, determined by DPPH and ABTS tests, increased by 30 and 23%, respectively, compared to the control. The obtained results indicate that the CP effect on the amount of organic acids in the needles was dependent on the half-sib family. It was determined that treatment with CP1 increased the amount of five organic acids in the needles of the 541 half-sib family seedlings. The presented results show future possibilities for using cold plasma seed treatment in the food and pharmacy industries.

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  • Detection of NO3− introduced in plasma-irradiated dry lettuce seeds using liquid chromatography-electrospray ionization quantum mass spectrometry (LC-ESI QMS)

    Takamasa Okumura, Pankaj Attri, Kunihiro Kamataki, Naoto Yamashita, Yuichi Tsukada, Naho Itagaki, Masaharu Shiratani, Yushi Ishibashi, Kazuyuki Kuchitsu, Kazunori Koga

    Scientific Reports   12 ( 1 )   12525   2022.7   ISSN:2045-2322 eISSN:20452322

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    Discharge plasma irradiates seeds with reactive oxygen and nitrogen species (RONS). However, RONS introduced in seeds by plasma irradiation have not been successfully detected thus far. This study provides experimental evidence that nitrate ion NO<sub>3</sub><sup>−</sup> is introduced in lettuce seeds as RONS upon irradiation with atmospheric-pressure air dielectric barrier discharge plasma. Plasma irradiation for 5 min promotes seed germination. The components of the plasma-irradiated seeds were examined using electrospray ionization quantum mass spectrometry (ESI QMS), which revealed that the plasma irradiation introduced an ion with a mass of 62 m/z in detectable amounts. This ion was identified as NO<sub>3</sub><sup>−</sup> by liquid chromatography (LC), multiple wavelength detector (MWD), and LC-ESI QMS. A one-dimensional simulation at electron temperature T<sub>e</sub> = 1 eV, electron density N<sub>e</sub> = 10<sup>13</sup>/m<sup>3</sup>, and gas temperature T<sub>g</sub> = 300 K indicated the introduction of NO<sub>3</sub><sup>−</sup>, involving nitric oxide NO. NO<sub>3</sub><sup>−</sup> is one of the most important ions that trigger signal transduction for germination when introduced in seeds. The scanning electron microscopy (SEM) images revealed that there was no change on the surface of the seeds after plasma irradiation. Plasma irradiation is an effective method of introducing NO<sub>3</sub><sup>−</sup> in seeds in a dry process without causing damage.

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  • Treatment of organic wastewater by a combination of non-thermal plasma and catalyst: a review

    Pankaj Attri, Kazunori Koga, Takamasa Okumura, Fadzai L. Chawarambwa, Tika E. Putri, Yuichi Tsukada, Kunihiro Kamataki, Naho Itagaki, Masaharu Shiratani

    Reviews of Modern Plasma Physics   6 ( 1 )   2022.7   ISSN:2367-3192 eISSN:2367-3192

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    Recently, non-thermal plasma technology has been frequently used for wastewater treatment. Plasma technology uses the effect of high-energy electrons, reactive species, ultraviolet light, free radicals, and pyrolysis to treat wastewater. Although in many cases, only the use of non-thermal plasma alone is not successful in degrading the complex organic wastes. This might be because of complexity in wastewater or not appropriate plasma device for wastewater treatment, or improper use of plasma-generated species that plays a critical role in organic waste degradation. To increase the degradation efficiency and reduce treatment time, the combination of non-thermal plasma and catalysts (homogeneous and heterogeneous) improves pollutant removal. This review includes the different non-thermal plasma systems and their action on decolorizing or degradation of dyes, degradation of phenolic pollutants, and degradation of pharmaceutical products, including antibiotics and other volatile organic solvents (VOC’s) with and without catalyst. Finally, probable mechanisms and suggestions to improve the wastewater treatment using non-thermal plasma were put forward. This review aims to help researchers understand the role of treatment time, feed gases, and catalysts on the degradation of organic wastes and looks forward to all possible developments in this field.

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  • Spatio-temporal measurements Ar 2p1 excitation rates and optical emission spectroscopy by capacitively coupled Ar and Ne mixed gas plasma

    Michihiro Otaka, Toshiaki Arima, Jiansyun Lai, Kizuki Ikeda, Kunihiro Kamataki, Naoto Yamashita, Takamasa Okumura, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    MRS Advances   7 ( 31 )   918 - 922   2022.7   ISSN:2731-5894 eISSN:2059-8521

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    We investigated the Ar mixture ratio dependence of the high-energy electron behaviors in capacitively coupled Ar+Ne plasmas using Optical Emission Spectroscopy (OES) and Phase-Resolved Optical Emission Spectroscopy (PROES) methods. OES measurements showed that optical emission intensities of Ar and Ne decreased as Ar mixture ratio increased, which implied decreases in the excitation rates of Ar and Ne. The spatio-temporal distribution of the Ar I 2p1 excitation rate was measured using the PROES method. These measurements showed the Ar I 2p1 excitation rate decreased as the Ar mixture ratio increased, which was consistent with the OES results. These results implied that the collision frequency between electrons and neutral particles increased with increase in Ar mixture ratio. In addition, the sheath expansion width in one RF cycle became small with increasing Ar mixture ratio, which led to a weakening of the effect of stochastic heating and a decrease of the electron temperature.

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  • Cold plasma-induced stimulation of natural sweeteners biosynthesis in <i>Stevia rebaudiana</i> Bertoni

    Zukiene, R; Judickaite, A; Mildaziene, V; Koga, K; Shiratani, M

    FEBS OPEN BIO   12   301 - 301   2022.7   ISSN:2211-5463

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  • Growth of Single-Crystalline ZnO Films on 18%-Lattice-Mismatched Sapphire Substrates Using Buffer Layers with Three-Dimensional Islands

    Yuta Nakamura, Naoto Yamashita, Kunihiro Kamataki, Takamasa Okumura, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

    Crystal Growth & Design   22 ( 6 )   3770 - 3777   2022.6   ISSN:1528-7483 eISSN:1528-7505

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    Heteroepitaxial growth of single-crystalline zinc oxide (ZnO) films on a c-plane sapphire substrate is an important technology for electronics and optoelectronic devices. Recently, the inverted Stranski-Krastanov (SK) mode has been demonstrated, and it has realized the heteroepitaxial growth of ZnO films on a sapphire substrate by sputtering. In this mode, a 10 nm-thick buffer layer consisting of three-dimensional islands (3D buffer layers) initially forms and relaxes the strain, and then, a two-dimensional ZnO film (2D layer) grows involving small strain. To clarify the correlation between the structural properties of the 3D buffer layers and the 2D layer, we introduce a figure of merit (FOM) of ZnO films: the reciprocal of the product of the full width at half-maximum (FWHM) of the (002) and (101) planes of X-ray rocking curves (XRCs) and root-mean-square (RMS) roughness. We find that the FOM of the 2D layers correlates with the RMS roughness, the in-plane orientation, and the lateral correlation length ζ of the surfaces of the buffer layers. We observe a surprisingly high correlation coefficient of 0.97. Our results imply that on the buffer layers with larger ζ, adatoms more easily reach the thermodynamically favored lattice positions. Thus, high-quality single-crystalline ZnO films, where the (002) plane XRC-FWHM and the RMS roughness are 0.05° and 1.5 nm, respectively, are grown on the buffer layers with a large ζ of 13.7 nm. This finding provides a useful tool for understanding the mechanism of the inverted SK mode.

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  • Performance comparison of nitrile-based liquid electrolytes on bifacial dye-sensitized solar cells under low-concentrated light

    Tika E. Putri, Fadzai L. Chawarambwa, Pankaj Attri, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    MRS Advances   7 ( 21 )   427 - 432   2022.5   ISSN:2731-5894 eISSN:2059-8521

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    Abstract: Dye-sensitized solar cell (DSSC) has low power output and efficiency. Even though the low-concentrated light can increase the POUT and power conversion efficiency (PCE) of DSSC, the effect of increase in the cell temperature, particularly electrolyte evaporation, becomes a major concern. In this study, we compared and investigated the performance of acetonitrile (AN-50), propionitrile (PN-50), and 3-metoxy propionitrile (Z-100) as nitrile-based electrolyte under low-concentrated light. The results showed 4–8 times increase in JSC and POUT in all electrolytes. AN-50 demonstrated an improved performance under influence of 2 cm distance concave mirror concentrated light with the highest JSC = 74.21 mA/cm2, POUT = 24.53 mW/cm2, and η = 7.99%. However, the performance of cell with AN-50 and PN-50 started to degrade within 3 h of measurement. In contrast, Z-100 displayed performance stability during 4 days measurement even with the lowest JSC= 49.98 mA/cm2, POUT = 19.50 mW/cm2, and η = 6.35%. Graphical abstract: [Figure not available: see fulltext.]

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  • Epitaxial growth of Zn1−xMgxO films on sapphire substrates via inverted Stranski-Krastanov mode using magnetron sputtering

    Daichi Takahashi, Naoto Yamashita, Daisuke Yamashita, Takamasa Okumura, Kunihiro Kamataki, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

    MRS Advances   7 ( 20 )   415 - 419   2022.2   ISSN:2731-5894 eISSN:2059-8521

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    We have succeeded in epitaxial growth of high-quality Zn1−xMgxO films of x = 0.04–0.33 on 18%-lattice mismatched sapphire substrates using magnetron sputtering. The films have grown in inverted Stranski-Krastanov (inverted SK) mode, where a buffer layer consisting of three-dimensional islands initially forms and a relaxed two-dimensional layer subsequently grows on the buffer layer. The resultant films have flat surfaces with root-mean-square roughness of 0.43–0.75 nm and are of high-crystal qualities even for large Mg contents; the full widths at half maximum of (0002) x-ray rocking curves are 0.05° (x = 0.33) and 0.07° (x = 0.14). Furthermore, we observed that the optical absorption edge shifts continuously toward the shorter wavelength with increasing x, and the band gap has been tuned from 3.5 to 4.3 eV. These results show that the inverted SK mode is useful for fabricating high-quality Zn1−xMgxO films with wide-range tunability of band gaps. Graphical abstract: [Figure not available: see fulltext.]

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  • Outcomes of Pulsed Electric Fields and Nonthermal Plasma Treatments on Seed Germination and Protein Functions

    Pankaj Attri, Takamasa Okumura, Kazunori Koga, Masaharu Shiratani, Douyan Wang, Katsuyuki Takahashi, Koichi Takaki

    Agronomy   12 ( 2 )   2022.2   eISSN:2073-4395

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    To meet the needs of the hungry population, it is critical to boost agricultural product production while minimizing contaminated waste. The use of two nonthermal technologies, pulsed electric field (PEF) and nonthermal plasma (NTP), is increasing every day. As both PEF and NTP are relatively newer areas, there is limited knowledge about these two technologies and their modes of action. Studies showed that PEF treatment on the plant seeds helps germination and seedling growth. The positive impact of PEF intensity is highly dependent on the seed coat type and plant species. Another nonthermal technology, NTP, affects seed germination, seedling growth, yield, and resilience to abiotic stress when generated at varying pressures with and without different feed gases. Early germination, germination rate, and germination percentage were all improved when the seedlings were treated with NTP. Similarly to the PEF treatment, NTP had a negative or no effect on germination. This review examined the effects of PEF and NTP on seed germination and ana-lyzed the situation and mechanism behind the positive or negative effect. Deactivation of proteins and enzymes to extend the shelf life of beverages is another prominent application of PEF and NTP. The interaction of PEF and NTP with proteins aids in understanding the microscopic mechanism of these technologies. Therefore, we covered in this review the potential structural and functional changes in proteins/enzymes as a result of PEF and NTP, as well as a comparison of the benefits and drawbacks of these two technologies.

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  • Effect of gas flow rate and discharge volume on CO2 methanation with plasma catalysis Reviewed

    Susumu Toko, Masashi Ideguchi, Taiki Haseagawa, Takamasa Okumura, Kunihiro Kamataki, Kosuke Takenaka, Kazunori Koga, Masaharu Shiratani, Yuichi Setsuhara

    Japanese Journal of Applied Physics   61 ( SI )   2022.1   ISSN:0021-4922 eISSN:1347-4065

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    CO2 methanation can be a key technology for realizing a sustainable society. CH4 is used as an energy carrier and raw material for chemical products, thereby contributing to the reduction of CO2 emissions. Methanation with plasma catalysis lowers the process temperature, which can improve the throughput and stability. In this study, we investigated the effect of the gas flow rate and the discharge volume on CO2 methanation, using a low-pressure capacitively coupled plasma reactor. Higher gas flow rates can increase the rate of CO2 throughput, but the CH4 selectivity decreases owing to the reduced transportation rate of the reactants to the catalyst surface. Increasing the discharge volume is effective in improving the transportation rate. This study suggested that the structure of the reactor significantly affects the CH4 generation rate.

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  • Improved luminescence performance of Yb3+-Er3+-Zn2+: Y<inf>2</inf>O<inf>3</inf> phosphor and its application to solar cells

    Fadzai Lesley Chawarambwa, Tika Erna Putri, Sung Hwa Hwang, Pankaj Attri, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Daisuke Nakamura, Masaharu Shiratani

    Optical Materials   123   2022.1   ISSN:0925-3467 eISSN:1873-1252

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    Upconversion materials (UC) can convert low-energy photons into visible light and, therefore, can be incorporated in solar cells to increase the absorption of visible light. This study synthesized UC nanophosphors Yb3+, Er3+: Y2O3 and Yb3+, Er3+, Zn2+: Y2O3 by a simple co-precipitation method for application in dye-sensitized solar cells (DSSCs). The impact of the enhancement in the concentration of Zn2+ on the photoluminescence (PL) and color point of the synthesized nanophosphors was also investigated. The synthesized nanophosphors emitted intense red and weaker green emissions upon excitation at 980 nm. The incorporation of Zn2+ to the Yb3+, Er3+: Y2O3 nanophosphors leads to color tunability in the red and yellow regions. Furthermore, the synthesized nanophosphors were incorporated into the DSSC photoanode to form a TiO2-UC-based DSSC for converting near-infrared (NIR) into visible light. We observed that the TiO2-UC-based DSSC showed an enhancement ratio in current density and power conversion efficiency of 17.4% and 16.6%, respectively, compared to the bare TiO2-based DSSC. These results reveal that UC-based Yb3+, Er3+, Zn2+: Y2O3 nanophosphors are useful in improving the efficiency of DSSCs and in color tunability applications.

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  • Functional nitrogen science based on plasma processing: quantum devices, photocatalysts and activation of plant defense and immune systems

    Toshiro Kaneko, Hiromitsu Kato, Hideaki Yamada, Muneaki Yamamoto, Tomoko Yoshida, Pankaj Attri, Kazunori Koga, Tomoyuki Murakami, Kazuyuki Kuchitsu, Sugihiro Ando, Yasuhiro Nishikawa, Kentaro Tomita, Ryo Ono, Tsuyohito Ito, Atsushi M. Ito, Koji Eriguchi, Tomohiro Nozaki, Takayoshi Tsutsumi, Kenji Ishikawa

    Japanese Journal of Applied Physics   61 ( SA )   SA0805 - SA0805   2022.1   ISSN:0021-4922 eISSN:1347-4065

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    <title>Abstract</title>
    Nitrogen is a very common element, comprising approximately 78% of Earth’s atmosphere, and is an important component of various electronic devices while also being essential for life. However, it is challenging to directly utilize dinitrogen because of the highly stable triple bond in this molecule. The present review examines the use of non-equilibrium plasmas to generate controlled electron impacts as a means of generating reactive nitrogen species (RNS) with high internal energy values and extremely short lifetimes. These species include ground state nitrogen atoms, excited nitrogen atoms, etc. RNS can subsequently react with oxygen and/or hydrogen to generate new highly reactive compounds and can also be used to control various cell functions and create new functional materials. Herein, plasma-processing methods intended to provide RNS serving as short-lived precursors for a range of applications are examined in detail.

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  • Plasma Synthesis of Silicon Nanoparticles: From Molecules to Clusters and Nanoparticle Growth

    Shota Nunomura, Kunihiro Kamataki, Takehiko Nagai, Tatsuya Misawa, Shinji Kawai, Kosuke Takenaka, Giichiro Uchida, Kazunori Koga

    IEEE Open Journal of Nanotechnology   3   94 - 100   2022   eISSN:2644-1292

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    Plasma nanotechnology is widely used for nanoscale etching, dopant implantation and thin-film deposition for state-of-the-art semiconductor devices. Such a plasma nanotechnology has another interesting aspect of synthesizing nanoparticles, in a controlled manner of atomic composition, structure and those size. Here, we present the polymerization and growth of silicon nanoparticles from a molecular level to 10 nm-particles in hydrogen diluted silane plasmas. The polymerization and growth are experimentally studied using various plasma diagnostic tools. The results indicate that nanoparticles are rapidly formed via gas-phase reactions in a low-density plasma comprising high-energy electrons. The growth kinetics and the modification of plasma properties are discussed in terms of gas-phase reactions, charging and coagulation of nanoparticles.

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  • Control of magnetic transition of ZnO:Co grown by RF-sputter using post-Annealing

    Nurut A.M., Yamashita N., Kamataki K., Koga K., Itagaki N., Shiratani M.

    2022 International Conference on Informatics Electrical and Electronics, ICIEE 2022 - Proceedings   2022   ISBN:9781665486224

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    Ferromagnetic semiconductor has attracted much attention for the application of spintronic devices, which will bring next generation of the information technology. Cobalt-doped Zinc Oxides (ZnO: Co) is strong candidate of this material group. The ZnO: Co films were grown on a silicon substrate (100) at room temperature by radio-frequency (rf) sputtering deposition and followed by post-Annealing treatment for 3 hours at 400°C and 800°C in the air. The transition from paramagnetic to ferromagnetic occurs after annealing at 400°C, and the properties return to paramagnetic like as-deposition when the temperature rises to 800°C. The XRD measurement of ZnO: Co films exhibited a wurtzite structure in the (002) plane and was free from secondary phases. Then, post-Annealing at 400°C due to shift peak and decrease oxygen element, meanwhile the crystallinity significantly up to 800°C.

    DOI: 10.1109/ICIEE55596.2022.10010108

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  • A Plasma Enhanced CVD Technology for Solving Issues on Sidewall Deposition in Trenches and Holes

    Shiratani, M; Kamataki, K; Koga, K

    2022 17TH INTERNATIONAL MICROSYSTEMS, PACKAGING, ASSEMBLY AND CIRCUITS TECHNOLOGY CONFERENCE (IMPACT)   2022-October   2022   ISSN:2150-5934 ISBN:978-1-6654-5221-2

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    EUV lithography drives the miniaturization of semiconductors for higher integration, and semiconductor manufacturing is in transition from two-dimensional (2D) to three-dimensional (3D) structures [1], which plays a crucial role in supporting packaging for edge computing such as Internet-of-Things (loT). 3D power scaling enables higher integration without reducing the size of transistors by arranging them vertically instead of horizontally. One of the important processes in manufacturing 3D structured semiconductors is the formation of films on sidewalls of trenches and holes. Such films are often deposited by plasma enhanced chemical vapor deposition (PECVD) [2]. Due to the gas decomposition by plasma, PECVD method archives a high deposition rate of good quality films at low temperature, which is an advantage over other deposition methods such as atomic layer deposition (ALD) [3]. However, this does not fully meet the actual manufacturing requirements. For instance, SiO2 dielectric films deposited by PECVD usually have low coverage and poor film quality on sidewall of trenches and holes compared to films on surface. Ion impact is one of the most important factors contributing to improving step coverage and film quality in trenches and holes. One parameter that characterized ion impact is the ion energy distribution function (IEDF) and ion angular distribution (IADF) [4], [5]. There are strong needs for low temperature deposition in trenches and holes.

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  • Performance Characteristics of Bifacial Dye-Sensitized Solar Cells with a V-Shaped Low-Concentrating Light System

    Tika E. Putri, Fadzai L. Chawarambwa, Min Kyu Son, Pankaj Attri, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    ACS Applied Energy Materials   4 ( 12 )   13410 - 13414   2021.12

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    Dye-sensitized solar cells (DSSCs) are attractive due to their simple fabrication process, low cost, performance stability, and eco-friendly characteristics. The power output (Pout) can be improved by applying an external concentrator, but this is rarely applied because of increasing temperature. Here, we successfully increased the Pout of bifacial DSSCs with the V-shaped plane, and concave mirrors showed an improved power output (Pout: 6.42 and 24.31 mW/cm2, separately) compared to ones without mirrors (4.25 mW/cm2). The high surface temperature on the concave mirror can be reduced with 1 cm mirror distancing followed by a reduction in Pout (19.07 mW/cm2).

    DOI: 10.1021/acsaem.1c02774

  • Impact of seed color and storage time on the radish seed germination and sprout growth in plasma agriculture

    Pankaj Attri, Kenji Ishikawa, Takamasa Okumura, Kazunori Koga, Masaharu Shiratani, Vida Mildaziene

    Scientific Reports   11 ( 1 )   2021.12

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    The use of low-temperature plasma for the pre-sowing seed treatment is still in the early stage of research; thus, numerous factors affecting germination percentage, seedling growth, and yield remains unknown. This study aimed to estimate how two critical factors, such as harvest year and seed coat color, affect the percentage of germination and seedling growth after plasma treatment. Radish seeds stored for 2 and 1 year after harvesting (harvested in 2017 and 2018) were sorted into two colors (brown and grey) to investigate the plasma effect on harvest year and seed coat color. We analyzed the amounts of seed phytohormones and antioxidant (γ-tocopherol) were analyzed using mass spectrometry, and physical changes were studied using SEM, EDX, and EPR to understand the mechanism of plasma-induced changes in radish seeds. The obtained results revealed that plasma treatment on seeds affects the germination kinetics, and the maximal germination percentage depends on seed color and the time of seed storage after harvest. Through this study, for the first time, we demonstrated that physical and chemical changes in radish seeds after plasma treatment depends upon the seed color and harvest year. Positive effects of plasma treatment on growth are stronger for sprouts from seeds harvested in 2017 than in 2018. The plasma treatment effect on the sprouts germinated from grey seeds effect was stronger than sprouts from brown radish seeds. The amounts of gibberellin A3 and abscisic acid in control seeds strongly depended on the seed color, and plasma induced changes were better in grey seeds harvested in 2017. Therefore, this study reveals that Air scalar-DBD plasma's reactive oxygen and nitrogen species (RONS) can efficiently accelerate germination and growth in older seeds.

    DOI: 10.1038/s41598-021-81175-x

  • Impact of Reactive Oxygen and Nitrogen Species Produced by Plasma on Mdm2–p53 Complex

    Pankaj Attri, Hirofumi Kurita, Kazunori Koga, Masaharu Shiratani

    International Journal of Molecular Sciences   22 ( 17 )   9585 - 9585   2021.9

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    The study of protein–protein interactions is of great interest. Several early studies focused on the murine double minute 2 (Mdm2)–tumor suppressor protein p53 interactions. However, the effect of plasma treatment on Mdm2 and p53 is still absent from the literature. This study investigated the structural changes in Mdm2, p53, and the Mdm2–p53 complex before and after possible plasma oxidation through molecular dynamic (MD) simulations. MD calculation revealed that the oxidized Mdm2 bounded or unbounded showed high flexibility that might increase the availability of tumor suppressor protein p53 in plasma-treated cells. This study provides insight into Mdm2 and p53 for a better understanding of plasma oncology.

    DOI: 10.3390/ijms22179585

  • Comparison between Ar+CH4 Cathode and Anode Coupled Capacitively Coupled Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Carbon Films Reviewed International journal

    S. H. Hwang, R. Iwamoto, T. Okumura, K. Kamataki, N. Itagaki, K. Koga, T. Nakatani, M. Shiratani

    Thin Solid Films   729   2021.7

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    DOI: 10.1016/j.tsf.2021.138701

  • Impact of atmospheric pressure plasma treated seeds on germination, morphology, gene expression and biochemical responses

    Pankaj Attri, Kazunori Koga, Takamasa Okumura, Masaharu Shiratani

    Japanese Journal of Applied Physics   60 ( 4 )   2021.4

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    In recent years, cold atmospheric pressure plasma (CAP) applications in agriculture are rapidly increasing. This review covers the effect of CAP and plasma-treated liquid (PTL) on seeds. CAP treatment on seed alters the germination percentage, morphology (shoot height, root length, surface area, etc.), gene expression, and biochemical responses (changes in hormones, antioxidants, amino acids, total soluble sugar content, chlorophyll content, etc.). The changes were incorporated in yield-related parameters (fresh and dry weight of seedlings) and water absorption capacity after plasma treatment. Lastly, we discussed the current status of CAP and PTL use in agricultural land.

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  • Highly efficient and transparent counter electrode for application in bifacial solar cells

    Fadzai Lesley Chawarambwa, Tika Erna Putri, Pankaj Attri, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    Chemical Physics Letters   768   2021.4

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    Triton X-100, DMSO and TiO2 were blended with PEDOT:PSS to produce a PEDOT:PSS/DMSO/TX100/TiO2 CE. A bifacial DSSC based on the PEDOT:PSS/DMSO/TX100/TiO2 CE was fabricated, and its photovoltaic characteristics were obtained under simulated solar light of 100 mWcm−2. Under bifacial illumination, the DSSC with the Pt CE achieved a current density (Jsc) of 16.16 mAcm−2 and system efficiency (Esys) of 8.67&#37; while the DSSC with the PEDOT:PSS/DMSO/TX100/TiO2 CE achieved a Jsc of 17.72 mAcm−2 and a Esys of 9.14&#37;. PEDOT:PSS/DMSO/TX100/TiO2 CE is very stable, has a high transmittance, exhibits high electro-catalytic activity, and is an excellent substitute for the Pt CE.

    DOI: 10.1016/j.cplett.2021.138369

  • Alterations of DNA Methylation Caused by Cold Plasma Treatment Restore Delayed Germination of Heat-Stressed Rice (Oryza sativa L.) Seeds Reviewed International journal

    C. Suriyasak, K. Hatanaka, H. Tanaka, T. Okumura, D. Yamashita, P. Attri, K. Koga, M. Shiratani, N. Hamaoka, Y. Ishibashi

    ACS Agric. Sci. Technol.   1 ( 1 )   2021.2

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  • Possible impact of plasma oxidation on the structure of the C-terminal domain of SARS-CoV-2 spike protein: A computational study

    Pankaj Attri, Kazunori Koga, Masaharu Shiratani

    Applied Physics Express   14 ( 2 )   2021.2

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    The recent outbreak of a novel coronavirus (SARS-CoV-2) has caused substantial public health issues worldwide. Cold atmospheric plasma (CAP) has shown its potential application in sterilization. It would be interesting to check the possible effect of CAP on the structure of the C-terminal domain of SARS-CoV-2 (SARS-CoV-2-CTD) spike protein and the interaction SARS-CoV-2-CTD with human angiotensin-converting enzyme 2 (hACE2). Therefore, we performed molecular dynamics simulations to calculate the root-mean-square deviation, root-mean-square fluctuation, principal component analysis and solvent-accessible surface area of SARS-CoV-2-CTD and the SARS-CoV-2-CTD/hACE2 complex with and without possible oxidation.

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  • Impact of surface morphologies of substrates on the epitaxial growth of magnetron-sputtered (ZnO) x (InN)1-x films

    Ryota Narishige, Kentaro Kaneshima, Daisuke Yamashita, Kunihiro Kamataki, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

    Japanese Journal of Applied Physics   60 ( SA )   SAAB02 - SAAB02   2021.1

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  • Time of Flight Size Control of Carbon Nanoparticles Using Ar+CH4 Multi-Hollow Discharge Plasma Chemical Vapor Deposition Method

    Sung Hwa Hwang, Kazunori Koga, Yuan Hao, Pankaj Attri, Takamasa Okumura, Kunihiro Kamataki, Naho Itagaki, Masaharu Shiratani, Jun-Seok Oh, Susumu Takabayashi, Tatsuyuki Nakatani

    Processes   9 ( 1 )   2 - 2   2020.12

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    As the application of nanotechnology increases continuously, the need for controlled size nanoparticles also increases. Therefore, in this work, we discussed the growth mechanism of carbon nanoparticles generated in Ar+CH4 multi-hollow discharge plasmas. Using the plasmas, we succeeded in continuous generation of hydrogenated amorphous carbon nanoparticles with controlled size (25–220 nm) by the gas flow. Among the nanoparticle growth processes in plasmas, we confirmed the deposition of carbon-related radicals was the dominant process for the method. The size of nanoparticles was proportional to the gas residence time in holes of the discharge electrode. The radical deposition developed the nucleated nanoparticles during their transport in discharges, and the time of flight in discharges controlled the size of nanoparticles.

    DOI: 10.3390/pr9010002

  • Experimental identification of the reactive oxygen species transported into a liquid by plasma irradiation

    Toshiyuki Kawasaki, Kazunori Koga, Masaharu Shiratani

    Japanese Journal of Applied Physics   59 ( 11 )   110502 - 110502   2020.11

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  • Low-stress diamond-like carbon films containing carbon nanoparticles fabricated by combining rf sputtering and plasma chemical vapor deposition

    Sung-Hwa Hwang, Takamasa Okumura, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Tatsuyuki Nakatani, Masaharu Shiratani

    Japanese Journal of Applied Physics   59 ( 10 )   100906 - 100906   2020.10

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    DOI: 10.35848/1347-4065/abbb20

  • Plasma agriculture from laboratory to farm: A review

    Pankaj Attri, Kenji Ishikawa, Takamasa Okumura, Kazunori Koga, Masaharu Shiratani

    Processes   8 ( 8 )   2020.8

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    © 2020 by the authors. In recent years, non-thermal plasma (NTP) application in agriculture is rapidly increasing. Many published articles and reviews in the literature are focus on the post-harvest use of plasma in agriculture. However, the pre-harvest application of plasma still in its early stage. Therefore, in this review, we covered the effect of NTP and plasma-treated water (PTW) on seed germination and growth enhancement. Further, we will discuss the change in biochemical analysis, e.g., the variation in phytohormones, phytochemicals, and antioxidant levels of seeds after treatment with NTP and PTW. Lastly, we will address the possibility of using plasma in the actual agriculture field and prospects of this technology.

    DOI: 10.3390/PR8081002

  • Influence of osmolytes and ionic liquids on the Bacteriorhodopsin structure in the absence and presence of oxidative stress: A combined experimental and computational study Reviewed

    Pankaj Attri, Jamoliddin Razzokov, Maksudbek Yusupov, Kazunori Koga, Masaharu Shiratani, Annemie Bogaerts

    International Journal of Biological Macromolecules   148   657 - 665   2020.4

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    © 2020 Elsevier B.V. Understanding the folding and stability of membrane proteins is of great importance in protein science. Recently, osmolytes and ionic liquids (ILs) are increasingly being used as drug delivery systems in the biopharmaceutical industry. However, the stability of membrane proteins in the presence of osmolytes and ILs is not yet fully understood. Besides, the effect of oxidative stress on membrane proteins with osmolytes or ILs has not been investigated. Therefore, we studied the influence of osmolytes and ILs as co-solvents on the stability of a model membrane protein (i.e., Bacteriorhodopsin in purple membrane of Halobacterium salinarum), using UV–Vis spectroscopy and molecular dynamics (MD) simulations. The MD simulations allowed us to determine the flexibility and solvent accessible surface area (SASA) of Bacteriorhodopsin protein in the presence and/or absence of co-solvents, as well as to carry out principal component analysis (PCA) to identify the most important movements in this protein. In addition, by means of UV–Vis spectroscopy we studied the effect of oxidative stress generated by cold atmospheric plasma on the stability of Bacteriorhodopsin in the presence and/or absence of co-solvents. This study is important for a better understanding of the stability of proteins in the presence of oxidative stress.

    DOI: 10.1016/j.ijbiomac.2020.01.179

  • Progress in photovoltaic performance of organic/inorganic hybrid solar cell based on optimal resistive Si and solvent modified poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) junction

    Hyunwoong Seo, Daisuke Sakamoto, Hakutatsu Chou, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    Progress in Photovoltaics: Research and Applications   26 ( 2 )   145 - 150   2020.2

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    Copyright © 2017 John Wiley & Sons, Ltd. Organic/inorganic hybrid solar cells have attracted much attention with simple fabrication and high performance because the combination of organic and inorganic materials compensates their disadvantages each other. This work tried to realize highly efficient hybrid solar cell based on crystalline Si and poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) junction. Performance dependences on the resistivity of Si substrate and the thickness of PEDOT:PSS layers were analyzed. Photocurrent of hybrid solar cells strongly depended on Si substrate, while overall performance depended on total resistance of hybrid solar cells not Si substrate. The charge transfer of PEDOT:PSS layer was varied by its thickness, and the 30-nm-thick PEDOT:PSS layer showed the best characteristics of charge transfer. The conductivity of the PEDOT:PSS layer was finally improved by solvent treatment using acetonitrile. As a result, the photovoltaic performance was much enhanced, and it was defined by 0.56 V of VOC, 30.24 mA/cm2 of JSC, 0.68 of FF, and 11.52&#37; of efficiency.

    DOI: 10.1002/pip.2961

  • Effect of hydrogen dilution on the silicon cluster volume fraction of a hydrogenated amorphous silicon film prepared using plasma-enhanced chemical vapor deposition Reviewed

    Yeonwon Kim, Kazunori Koga, Masaharu Shiratani

    Current Applied Physics   20 ( 1 )   191 - 195   2020.1

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    © 2019 Korean Physical Society We investigated the effect of hydrogen dilution on the Si cluster volume fraction of hydrogenated amorphous films by varying the hydrogen dilution ratio at 0.5 Torr and compared it to that obtained at pure silane discharge at 0.3, 0.4, and 0.5 Torr. The correlation between the plasma emission characteristic, deposition rate, and cluster volume fraction in the hydrogen dilution plasma was described. The cluster volume fractions of films under hydrogen dilution conditions were similar to those of the pure silane but showed a higher deposition rate. The results suggest that under hydrogen dilution conditions, it is possible to maintain a higher deposition rate with a lower cluster incorporation rate.

    DOI: 10.1016/j.cap.2019.11.001

  • Local supply of reactive oxygen species into a tissue model by atmospheric-pressure plasma-jet exposure Reviewed

    Toshiyuki Kawasaki, Fumiaki Mitsugi, Kazunori Koga, Masaharu Shiratani

    Journal of Applied Physics   125   2019.6

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    Local supply of reactive oxygen species into a tissue model by atmospheric-pressure plasma-jet exposure
    © 2019 Author(s). The supply of reactive oxygen species (ROSs) into a tissue by plasmas must be controlled for the safe and effective use of plasma technologies in biomedical applications. In this study, the two-dimensional distributions of ROSs after passing through an agarose tissue model by the plasma-jet exposures were visualized using a KI-starch gel reagent to evaluate the local ROS supply. Partial ROS supply on the tissue model surface induced the local ROS supply in a pointlike shape just under the plasma-exposed spot. The O3-containing gas exposure without direct plasma contact could not induce the local ROS supply. Therefore, the local ROS supply was assumed to be induced by plasma-specific effects. However, the results also indicated that the plasma jet coming in direct contact with the tissue model surface did not necessarily induce the local ROS supply. The effects of the tissue model thickness on the local ROS supply were also studied; the local ROS supply could penetrate to a depth of 2 mm in the tissue model under the given experimental conditions.

    DOI: 10.1063/1.5091740

  • Controlling feeding gas temperature of plasma jet with Peltier device for experiments with fission yeast Reviewed

    Shinji Yoshimura, Mitsutoshi Aramaki, Yoko Otsubo, Akira Yamashita, Kazunori Koga

    Japanese Journal of Applied Physics   58 ( SE )   SEEG03 - SEEG03   2019.6

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    DOI: 10.7567/1347-4065/ab1473

  • Progress and perspectives in dry processes for leading-edge manufacturing of devices: toward intelligent processes and virtual product development Reviewed

    Taku Iwase, Yoshito Kamaji, Song Yun Kang, Kazunori Koga, Nobuyuki Kuboi, Moritaka Nakamura, Nobuyuki Negishi, Tomohiro Nozaki, Shota Nunomura, Daisuke Ogawa, Mitsuhiro Omura, Tetsuji Shimizu, Kazunori Shinoda, Yasushi Sonoda, Haruka Suzuki, Kazuo Takahashi, Takayoshi Tsutsumi, Kenichi Yoshikawa, Tatsuo Ishijima, Kenji Ishikawa

    Japanese Journal of Applied Physics   58 ( SE )   SE0804 - SE0804   2019.6

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    DOI: 10.7567/1347-4065/ab163b

  • Progress and perspectives in dry processes for nanoscale feature fabrication: toward intelligent processes and virtual product development Reviewed

    Taku Iwase, Yoshito Kamaji, Song Yun Kang, Kazunori Koga, Nobuyuki Kuboi, Moritaka Nakamura, Nobuyuki Negishi, Tomohiro Nozaki, Shota Nunomura, Daisuke Ogawa, Mitsuhiro Omura, Tetsuji Shimizu, Kazunori Shinoda, Yasushi Sonoda, Haruka Suzuki, Kazuo Takahashi, Takayoshi Tsutsumi, Kenichi Yoshikawa, Tatsuo Ishijima, Kenji Ishikawa

    Japanese Journal of Physics   Vol. 58   pp. SE0804(21pp)   2019.5

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    Progress and perspectives in dry processes for nanoscale feature fabrication: toward intelligent processes and virtual product development

  • 大気圧非平衡He プラズマジェットと溶液との相互作用に関する可視化研究 Invited

    内田 儀一郎, 竹中 弘祐, 川崎 敏之, 古閑 一憲, 白谷 正治, 節原 裕一

    スマートプロセス学会誌   8 ( 2 )   58 - 63   2019.3

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  • Spatial correlation between density fluctuations of high energy electrons and nanoparticles in amplitude modulated capactively coupled plasma Reviewed

    R. Zhou, K. Mori, H. Ohtomo, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    J. Phys.: Conf. Ser.   2019.1

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    Spatial correlation between density fluctuations of high energy electrons and nanoparticles in amplitude modulated capactively coupled plasma

  • Room-temperature fabrication of amorphous In2O3:Sn films with high electron mobility via nitrogen mediated amorphization Reviewed

    K. Imoto, H. Wang, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    J. Phys.: Conf. Ser.   2019.1

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    Room-temperature fabrication of amorphous In2O3:Sn films with high electron mobility via nitrogen mediated amorphization

  • Effects of nitrogen impurity on zno crystal growth on Si substrates Reviewed

    Soichiro Muraoka, Lyu Jiahao, Daisuke Yamashita, Kunihiro Kamataki, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

    MRS Advances   2019.1

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    Effects of nitrogen impurity on zno crystal growth on Si substrates
    Effects of nitrogen impurity on ZnO crystal growth on Si substrates have been investigated. The quantitative analysis on the surface morphology deriving height-height correlation function indicates that adsorbed nitrogen atoms suppress the secondary nucleation and enhance adatom migration. The resultant films have smooth surface as well as large grain size up to 24 nm even for small thickness of 10 nm. ZnO films fabricated by using such films as buffer layers possess high crystal quality, where the full width at half maximum of (002) rocking curve is 0.68°, one-fourth of that for films fabricated without nitrogen.

    DOI: 10.1557/adv.2019.28

  • Sputter Epitaxy of (ZnO)x(InN)1-x films on Lattice-mismatched Sapphire Substrate Reviewed

    Nanoka Miyahara, Seichi Urakawa, Daisuke Yamashita, Kunihiro Kamataki, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

    MRS Advances   2019.1

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    Sputter Epitaxy of (ZnO)x(InN)1-x films on Lattice-mismatched Sapphire Substrate
    We have recently developed a novel semiconductor, (ZnO)x(InN)1-x (abbreviated to ZION). In this study, we have succeeded in direct epitaxial growth of ZION films on 19?21&#37;-lattice-mismatched c-plane sapphire by radio-frequency (RF) magnetron sputtering. X-ray diffraction analysis showed that there is no epitaxial relationship between ZION films fabricated at room-temperature (RT) and the sapphire substrates, while the films fabricated at 450oC grow epitaxially on the sapphire substrates. From the analysis of time evolution of the surface morphology, the process for the epitaxial growth of ZION on sapphire is found to consist of three stages. They are (i) initial nucleation of ZION crystallites with crystal axis aligned to the sapphire substrate, (ii) island growth from the initially formed nuclei and subsequent nucleation (secondary nucleation) of ZION crystallites, and (iii) lateral growth of ZION islands originated from initially formed nuclei. On the other hand, non-epitaxial ZION films fabricated at RT just grow in 3D mode. From these results, we conclude that the substrate temperature is the key to control of nucleation and subsequent epitaxial growth of ZION films on the lattice-mismatched substrate.

    DOI: 10.1557/adv.2019.17

  • Photoluminescence of (ZnO)0.82(InN)0.18 films -Incident light angle dependence- Reviewed

    N. Miyahara, K. Iwasaki, D. Yamashita, D. Nakamura, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    Mater. Sci. Forum   941   2099 - 2103   2018.12

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    Photoluminescence of (ZnO)0.82(InN)0.18 films -Incident light angle dependence-
    We have fabricated a new semiconducting material, (ZnO)x(InN)1-x (called ZION hereafter), which is a pseudo-binary alloy of wurtzite ZnO (band gap: 3.4 eV) and wurtzite InN (band gap: 0.7 eV). We have succeeded in fabricating epitaxial (ZnO)0.82(InN)0.18 films on ZnO templates by RF magnetron sputtering. XRD measurements show that the full width at half maximum of the rocking curves from (101) plane and (002) plane are significantly small of 0.11 ? and 0.16 ?, respectively, indicating good in-plane and out-of-plane crystal alignment. High crystal quality of the films was also proved by deducing the defect density from XRD analysis showing that the edge type dislocation density is low of 8.2×108 cm-2. Furthermore, we observed room temperature photoluminescence from ZION films as a parameter of incident angle of He-Cd laser light. The results indicate that an emission peak of 2.79 eV is originated from ZION.

    DOI: 10.4028/www.scientific.net/MSF.941.2099

  • Impact of Gamma rays and DBD plasma treatments on wastewater treatment

    Pankaj Attri, Fumiyoshi Tochikubo, Ji Hoon Park, Eun Ha Choi, Kazunori Koga, Masaharu Shiratani

    Scientific Reports   8 ( 1 )   2018.12

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    © 2018 The Author(s). The rapid growth in world population brings with it the need for improvement in the current technology for water purification, in order to provide adequate potable water to everyone. Although an advanced oxidation process has been used to purify wastewater, its action mechanism is still not clear. Therefore, in the present study we treat dye-polluted water with gamma rays and dielectric barrier discharge (DBD) plasma. We study the wastewater treatment efficiency of gamma rays and DBD plasma at different absorbed doses, and at different time intervals, respectively. Methyl orange and methylene blue dyes are taken as model dyes. To understand the effects of environment and humidity on the decolorization of these dyes, we use various gas mixtures in the DBD plasma reactor. In the plasma reactor, we use the ambient air and ambient air + other gas (oxygen, nitrogen, and argon) mixtures, respectively, for the treatment of dyes. Additionally, we study the humidity effect on the decolorization of dyes with air plasma. Moreover, we also perform plasma simulation in different environment conditions, to understand which major radicals are generated during the plasma treatments, and determine their probable densities.

    DOI: 10.1038/s41598-018-21001-z

  • Cross correlation analysis of fluctuation of interactions between nanoparticles and low pressure reactive plasmas Reviewed

    R. Zhou, K. Mori, H. Ohtomo, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    Mater. Sci. Forum   941   2104 - 2108   2018.12

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    Cross correlation analysis of fluctuation of interactions between nanoparticles and low pressure reactive plasmas
    We analyzed fluctuations of interactions between low pressure reactive plasmas and nanoparticles formed in the plasmas, to shed light on origins of fluctuations of interactions and to control fluctuations in plasma processes. Spatiotemporal fluctuations of nanoparticle density develop not only in a linear way but also in a nonlinear way. The results suggest nonlinear interactions potentially induce spatial and temporal process fluctuations.

    DOI: 10.4028/www.scientific.net/MSF.941.2104

  • Effects of sputtering pressure on (ZnO)<inf>x</inf>(InN)<inf>1-x</inf> crystal film growth at 450?C Reviewed

    N. Itagaki, K. Takeuchi, N. Miyahara, K. Imoto, H. Seo, K. Koga, M. Shiratani

    Mater. Sci. Forum   941   2093 - 2098   2018.12

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    Effects of sputtering pressure on (ZnO)<inf>x</inf>(InN)<inf>1-x</inf> crystal film growth at 450?C
    We studied effects of sputtering pressure on growth of (ZnO)x(InN)1-x crystal films deposited at 450°C by rf magnetron sputtering. Epitaxial growth of (ZnO)x(InN)1-x films was realized on single-crystalline ZnO template. X-ray diffraction measurements show that full width at half maximum of the rocking curves from the (101) plane of the films reaches minimum value of 0.11? at 0.5 Pa. The sputtering gas pressure is a key tuning knob for controlling the crystal quality of ZION films.

    DOI: 10.4028/www.scientific.net/MSF.941.2093

  • Particle behavior and its contribution to film growth in a remote silane plasma

    Yeonwon Kim, Kazunori Koga, Masaharu Shiratani

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films   36 ( 5 )   2018.9

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    © 2018 Author(s). Time-dependent behavior of particles measured using the laser light scattering method in a remote silane plasma has been investigated using both optical emission spectroscopy and quartz crystal microbalance. Laser-scattered particles were observed from 0.3 s after the plasma ignition and scattering increased rapidly until 3.0 s. In the 0-0.3 s region where no particles were observed, SiH and Hβ emission intensity as well as Si/SiH and Hβ/SiH intensity ratios increased rapidly. Laser-scattered particles decreased in number, 3.0 s after plasma discharge, but the deposition rate measured using the quartz crystal microbalance increased linearly. The relationships between time-resolved images of particle movements and their contribution to film deposition as well as plasma characteristics such as SiH and Hβ are presented. The results show that the particles contributing to film growth at the early stage of plasma are much higher in number than those in the stabilized state.

    DOI: 10.1116/1.5037539

  • The effect of the H<inf>2</inf>/(H<inf>2</inf> + Ar) flow-rate ratio on hydrogenated amorphous carbon films grown using Ar/H<inf>2</inf>/C<inf>7</inf>H<inf>8</inf>plasma chemical vapor deposition

    Taojun Fang, Kenji Yamaki, Kazunori Koga, Daisuke Yamashita, Hyunwoong Seo, Naho Itagaki, Masaharu Shiratani, Kosuke Takenaka, Yuichi Setsuhara

    Thin Solid Films   660   891 - 898   2018.8

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    The effect of the H<inf>2</inf>/(H<inf>2</inf> + Ar) flow-rate ratio on hydrogenated amorphous carbon films grown using Ar/H<inf>2</inf>/C<inf>7</inf>H<inf>8</inf> plasma chemical vapor deposition
    © 2018 Elsevier B.V. To produce hydrogenated amorphous carbon (a-C:H) films with high mass density at a high deposition rate and low substrate bias voltage, we deposited these films on a Si substrate by plasma chemical vapor deposition, using toluene as a source compound and varying the gas flow-rate ratio of H2/(H2 + Ar). By decreasing the gas flow-rate ratio from 55&#37; to 11&#37;, the hydrogen content in the films decreased, and the density of sp3 carbon atoms in the films increased, whereas their surface roughness increased. At the gas flow-rate ratio of 11&#37;, we produced a-C:H films with a high bulk density of 1830 kg/m3 at a high deposition rate of 81.1 nm/min.

    DOI: 10.1016/j.tsf.2018.02.035

  • Low-Pressure Methanation of CO2 Using a Plasma–Catalyst System

    Susumu Toko, Satoshi Tanida, Kazunori Koga, Masaharu Shiratani

    Science of Advanced Materials   10 ( 8 )   1087 - 1090   2018.8

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    DOI: 10.1166/sam.2018.3303

  • Transportation of reactive oxygen species in a tissue phantom after plasma irradiation

    Toshiyuki Kawasaki, Gouya Kuroeda, Ryuhei Sei, Masaaki Yamaguchi, Reishi Yoshinaga, Riho Yamashita, Hikaru Tasaki, Kazunori Koga, Masaharu Shiratani

    Japanese Journal of Applied Physics   57 ( 1 )   2018.1

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    © 2018 The Japan Society of Applied Physics. The transportation of reactive oxygen species (ROSs) in a tissue phantom after plasma irradiation was studied using a two-layered target consisting of a KI-starch gel reagent and an agarose tissue phantom. The two-layered target can visualize the two-dimensional concentration distribution of ROSs after passing through the tissue phantom. ROSs were accumulated in the tissue phantom by the plasma irradiation, and they continued to be transported in the depth direction with the standing time after the plasma irradiation. The amount of ROS after passing through the tissue phantom increased in proportion to both plasma irradiation time and standing time. In this case, the ROS distribution patterns did not depend on these times. The ROS transportation speed after plasma irradiation was 0.05 mm/min in the tissue phantom. The ROS penetration rate depended on the standing time, not on the plasma irradiation time, and it was less than 1&#37;.

    DOI: 10.7567/JJAP.57.01AG01

  • 低温プラズマによるナノ粒子の合成と太陽電池への応用 Reviewed

    古閑一憲, 徐鉉雄, 板垣奈穂, 白谷正治

    信学技報   117   5 - 8   2017.11

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    Synthesis of nanoparticles using low temperature plasmas and its application to solar cells
    We have succeeded in continuously fabricating size-controlled crystalline silicon nanoparticles by using low temperature plasma. For controlling size and structure, gas pressure and H2 dilution ratio of SiH4 are key parameters. We fabricated Schottky cells using synthesized Si nanoparticles which shows multiple exciton generation for photon energy with 3 times larger than their band gap. We utilized the particles to nanoparticle-sensitized solar cells which show the world best efficiency. Moreover, we found the nanoparticle composite polymer counter electrode is promising to low-cost and high performance solar cells.

  • Low temperature rapid formation of Au-induced crystalline Ge films using sputtering deposition

    Sota Tanami, Daiki Ichida, Shinji Hashimoto, Hyunwoong Seo, Daisuke Yamashita, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    THIN SOLID FILMS   641   59 - 64   2017.11

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    We report low temperature (100-170 degrees C) and rapid (10 min) formation of crystalline Ge films between Au catalyst film and quartz glass substrate using a radio frequencymagnetron sputtering deposition. The formation rate of crystalline Ge films between Au catalyst film and quartz glass substrate is proportional to the deposition rate of Ge film, namely the flux of Ge atoms. To obtain insights on the formation mechanism of crystalline Ge films, we studied dependence of grain size of Au films on annealing temperature and Au film thickness. CrystallineGe films formed belowAu films have randomcrystalline orientationwith in-plane grain size frombelow1 mu m. Small crystalline grain size of Au films is needed to form rapidly Au induced crystalline Ge films. (C) 2017 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.tsf.2017.02.067

  • 色素増感太陽電池のポリマー対向電極における触媒反応の活性化 Reviewed

    徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    信学技報   117   27 - 29   2017.11

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    Catalytic enhancement of polymer counter electrode in dye-sensitized solar cells
    A counter electrode of dye-sensitized solar cells plays a significant role in the reduction of tri-iodide with electrolyte as a catalyst. Thus, the counter electrode of dye-sensitized solar cells is an important component, which often limits the cell performance. Some materials such as carbon, graphene, carbon nano-tube, transition metal and compounds, and polymer have been investigated as counter electrode materials. However, Pt is still the dominant counter electrode material despite its high cost. This work focused on a low-cost polymer as a counter electrode material of dye-sensitized solar cells. Poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) was applied for the counter electrode. As similar to previous studies on PEDOT:PSS counter electrode, initial photovoltaic performance of dye-sensitized solar cells based on PEDOT:PSS counter electrode was lower than that of Pt counter electrode. Especially, fill factor of dye-sensitized solar cells was significantly decreased from Pt to PEDOT:PSS counter electrodes. To improve the catalytic properties of polymer counter electrodes, this work introduced nanoparticles into polymer layer. Nanoparticle addition increased the surface area of polymer counter electrode and activated the catalytic reactions. Consequently, we have realized the dye-sensitized solar cells with the polymer nanocomposite counter electrode containing PEDOT:PSS and nanoparticles exhibiting higher efficiency and photocurrent than the dye-sensitized solar cells based on Pt counter electrode.

  • Hysteresis in volume fraction of clusters incorporated into a-Si:H films deposited by SiH 4 plasma chemical vapor deposition

    Susumu Toko, Yoshihiro Torigoe, Kimitaka Keya, Takashi Kojima, Hyunwoong Seo, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    Surface and Coatings Technology   326   388 - 394   2017.10

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    © 2017 Elsevier B.V. Suppressing cluster incorporation into hydrogenated amorphous silicon films deposited by SiH4discharge plasma is the key to better film stability, because cluster incorporation contributes significantly to the formation of SiH2bonds which are closely related to light-induced degradation of the films. Here, we report hysteresis in the deposition rate and the volume fraction of clusters incorporated into a-Si:H films deposited by SiH4plasma CVD; the deposition rate and the volume fraction show looping behaviors when sequentially changing the discharge power, because clusters formed in the previous condition tend to remain in plasma and affect significantly the deposition rate and the volume fraction. The hysteresis is also shown as a function of SiH* emission intensity, being proportional to the radical generation rate due to electron impact dissociation of SiH4. By utilizing the hysteresis phenomenon, the volume fraction of clusters in films can be reduced significantly. We propose a model of plasma containing clusters, in which clusters play a key role in the hysteresis, namely the nonlinear behavior of the deposition rate and the volume fraction of clusters in films. Eventually, we deposited a-Si:H films of low cluster incorporation at a high deposition rate of 0.09 nm/s utilizing the hysteresis phenomena.

    DOI: 10.1016/j.surfcoat.2017.01.034

  • Extension of the operational regime of the LHD towards a deuterium experiment

    Y. Takeiri, T. Morisaki, M. Osakabe, M. Yokoyama, S. Sakakibara, H. Takahashi, Y. Nakamura, T. Oishi, G. Motojima, S. Murakami, K. Ito, A. Ejiri, S. Imagawa, S. Inagaki, M. Isobe, S. Kubo, S. Masamune, T. Mito, I. Murakami, K. Nagaoka, K. Nagasaki, K. Nishimura, M. Sakamoto, R. Sakamoto, T. Shimozuma, K. Shinohara, H. Sugama, K. Y. Watanabe, J. W. Ahn, N. Akata, T. Akiyama, N. Ashikawa, J. Baldzuhn, T. Bando, E. Bernard, F. Castejon, H. Chikaraishi, M. Emoto, T. Evans, N. Ezumi, K. Fujii, H. Funaba, M. Goto, T. Goto, D. Gradic, Y. Gunsu, S. Hamaguchi, H. Hasegawa, Y. Hayashi, C. Hidalgo, T. Higashiguchi, Y. Hirooka, Y. Hishinuma, R. Horiuchi, K. Ichiguchi, K. Ida, T. Ido, H. Igami, K. Ikeda, S. Ishiguro, R. Ishizaki, A. Ishizawa, A. Ito, Y. Ito, A. Iwamoto, S. Kamio, K. Kamiya, O. Kaneko, R. Kanno, H. Kasahara, D. Kato, T. Kato, K. Kawahata, G. Kawamura, M. Kisaki, S. Kitajima, W. H. Ko, M. Kobayashi, S. Kobayashi, T. Kobayashi, K. Koga, A. Kohyama, R. Kumazawa, J. H. Lee, D. Lopez-Bruna, R. Makino, S. Masuzaki, Y. Matsumoto, H. Matsuura, O. Mitarai, H. Miura, J. Miyazawa, N. Mizuguchi, C. Moon, S. Morita, T. Moritaka, K. Mukai, T. Muroga, S. Muto, T. Mutoh, T. Nagasaka, Y. Nagayama, N. Nakajima, Y. Nakamura, H. Nakanishi, H. Nakano, M. Nakata, Y. Narushima, D. Nishijima, A. Nishimura, S. Nishimura, T. Nishitani, M. Nishiura, Y. Nobuta, H. Noto, M. Nunami, T. Obana, K. Ogawa, S. Ohdachi, M. Ohno, N. Ohno, H. Ohtani, M. Okamoto, Y. Oya, T. Ozaki, B. J. Peterson, M. Preynas, S. Sagara, K. Saito, H. Sakaue, A. Sanpei, S. Satake, M. Sato, T. Saze, O. Schmitz, R. Seki, T. Seki, I. Sharov, A. Shimizu, M. Shiratani, M. Shoji, C. Skinner, R. Soga, T. Stange, C. Suzuki, Y. Suzuki, S. Takada, K. Takahata, A. Takayama, S. Takayama, Y. Takemura, Y. Takeuchi, H. Tamura, N. Tamura, H. Tanaka, K. Tanaka, M. Tanaka, T. Tanaka, Y. Tanaka, S. Toda, Y. Todo, K. Toi, M. Toida, M. Tokitani, T. Tokuzawa, H. Tsuchiya, T. Tsujimura, K. Tsumori, S. Usami, J. L. Velasco, H. Wang, T. -H. Watanabe, T. Watanabe, J. Yagi, M. Yajima, H. Yamada, I. Yamada, O. Yamagishi, N. Yamaguchi, Y. Yamamoto, N. Yanagi, R. Yasuhara, E. Yatsuka, N. Yoshida, M. Yoshinuma, S. Yoshimura, Y. Yoshimura

    NUCLEAR FUSION   57 ( 10 )   2017.10

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    As the finalization of a hydrogen experiment towards the deuterium phase, the exploration of the best performance of hydrogen plasma was intensively performed in the large helical device. High ion and electron temperatures, T-i and T-e, of more than 6 keV were simultaneously achieved by superimposing high-power electron cyclotron resonance heating onneutral beam injection (NBI) heated plasma. Although flattening of the ion temperature profile in the core region was observed during the discharges, one could avoid degradation by increasing the electron density. Another key parameter to present plasma performance is an averaged beta value <beta >. The high <beta > regime around 4&#37; was extended to an order of magnitude lower than the earlier collisional regime. Impurity behaviour in hydrogen discharges with NBI heating was also classified with a wide range of edge plasma parameters. The existence of a no impurity accumulation regime, where the high performance plasma is maintained with high power heating > 10 MW, was identified. Wide parameter scan experiments suggest that the toroidal rotation and the turbulence are the candidates for expelling impurities from the core region.

    DOI: 10.1088/1741-4326/aa7fc2

  • Impact of an ionic liquid on protein thermodynamics in the presence of cold atmospheric plasma and gamma rays

    Pankaj Attri, Minsup Kim, Eun Ha Choi, Art E. Cho, Kazunori Koga, Masaharu Shiratani

    PHYSICAL CHEMISTRY CHEMICAL PHYSICS   19 ( 37 )   25277 - 25288   2017.10

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    Cold atmospheric plasma and gamma rays are known to have anticancer properties, even though their specific mechanisms and roles as co-solvents during their action are still not clearly understood. Despite the use of gamma rays in cancer therapy, they have oncogenic potential, whereas this has not been observed for plasma treatment (to date). To gain a better understanding, we studied the action of dielectric barrier discharge (DBD) plasma and gamma rays on the myoglobin protein. We analyzed the secondary structure and thermodynamic properties of myoglobin after both treatments. In addition, in the last few years, ammonium ionic liquids (ILs) have revealed their important role in protein folding as co-solvents. In this work, we treated the protein with ammonium ILs such as triethylammonium methanesulfonate (TEMS) and tetrabutylammonium methanesulfonate (TBMS) and later treated this IL-protein solution with DBD plasma and gamma rays. In this study, we show the chemical and thermal denaturation of the protein after plasma and gamma treatments in the presence and absence of ILs using circular dichroism (CD) and UV-vis spectroscopy. Furthermore, we also show the influence of plasma and gamma rays on the secondary structure of myoglobin in the absence and presence of ILs or ILs + urea using CD. Finally, molecular dynamic simulations were conducted to gain deeper insight into how the ILs behave to protect the protein against the hydrogen peroxide generated by the DBD plasma and gamma rays.

    DOI: 10.1039/c7cp04083k

  • Performance enhancement of quantum dot-sensitized solar cells based on polymer nano-composite catalyst

    Hyunwoong Seo, Chandu V. V. M. Gopi, Hee-Je Kim, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    ELECTROCHIMICA ACTA   249   337 - 342   2017.9

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    Polymer nano-composite composed of poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) and TiO2 nano-particles was deposited on fluorine-doped tin oxide substrate and applied as an alternative to Au counter electrode of quantum dot-sensitized solar cell (QDSC). It became surface-richer with the increase in nano-particle amount so that catalytic reaction was increased by widened catalytic interface. Electrochemical impedance spectroscopy and cyclic voltammetry clearly demonstrated the enhancement of polymer nano-composite counter electrode. A QDSC based on polymer nano-composite counter electrode showed 0.56 V of V-OC, 12.24 mA cm(-2) of J(SC), 0.57 of FF, and 3.87&#37; of efficiency and this photovoltaic performance was higher than that of QDSC based on Au counter electrode (3.75&#37;). (C) 2017 Elsevier Ltd. All rights reserved.

    DOI: 10.1016/j.electacta.2017.08.030

  • The protective action of osmolytes on the deleterious effects of gamma rays and atmospheric pressure plasma on protein conformational changes

    Pankaj Attri, Minsup Kim, Thapanut Sarinont, Eun Ha Choi, Hyunwoong Seo, Art E. Cho, Kazunori Koga, Masaharu Shiratani

    SCIENTIFIC REPORTS   7   2017.8

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    Both gamma rays and atmospheric pressure plasma are known to have anticancer properties. While their mechanism actions are still not clear, in some contexts they work in similar manner, while in other contexts they work differently. So to understand these relationships, we have studied Myoglobin protein after the treatment of gamma rays and dielectric barrier discharge (DBD) plasma, and analyzed the changes in thermodynamic properties and changes in the secondary structure of protein after both treatments. The thermodynamic properties were analyzed using chemical and thermal denaturation after both treatments. We have also studied the action of gamma rays and DBD plasma on myoglobin in the presence of osmolytes, such as sorbitol and trehalose. For deep understanding of the action of gamma rays and DBD plasma, we have analyzed the reactive species generated by them in buffer at all treatment conditions. Finally, we have used molecular dynamic simulation to understand the hydrogen peroxide action on myoglobin with or without osmolytes, to gain deeper insight into how the osmolytes can protect the protein structure from the reactive species generated by gamma rays and DBD plasma.

    DOI: 10.1038/s41598-017-08643-1

  • 低温プラズマによるナノ粒子の合成と太陽電池への応用 (有機エレクトロニクス)

    古閑 一憲, 徐 鉉雄, 板垣 奈穂, 白谷 正治

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   117 ( 8 )   5 - 8   2017.4

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    Synthesis of nanoparticles using low temperature plasmas and its application to solar cells

  • Densities and Surface Reaction Probabilities of Oxygen and Nitrogen Atoms During Sputter Deposition of ZnInON on ZnO

    Koichi Matsushima, Tomoaki Ide, Keigo Takeda, Masaru Hori, Daisuke Yamashita, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

    IEEE TRANSACTIONS ON PLASMA SCIENCE   45 ( 2 )   323 - 327   2017.3

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    We report densities and surface reaction probabilities of O and N atoms during sputter deposition of ZnInON films on ZnO templates, measured via vacuum ultraviolet absorption spectroscopy. O density is almost constant of 4.5 x 10(11) cm(-3) irrespective of O-2 gas flow rate, whereas N density increases sharply from 2.7x10(11) cm(-3) for O-2 gas sccm to 7.7 x 10(11) cm(-3) for 0.6 sccm and it increases gradually 10(11) cm(-3) for 5 sccm. The surface reaction probability beta(O) of O atoms on ZnInON increases significantly from 0.022 to 0.404 with increasing O-2 gas flow rate from 0 to 5 sccm, whereas beta(N) of N atoms on ZnInON decreases slightly from 0.018 to 0.006. The stoichiometric chemical compositional ratio of ZnInON films with [Zn]/([Zn] + [In]) = [O]/([O] + [N]) = 94&#37; is obtained at beta(O) = 0.404 of O atoms. This stoichiometric compositional ZnInON films grow coherently on ZnO templates, while nonstoichiometric films do not. The stoichiometric chemical composition is the key to coherent growth of ZnInON films.

    DOI: 10.1109/TPS.2016.2632124

  • Influence of plasma irradiation on silkworm

    Akira Yonesu, Kazunori Koga, Masaharu Shiratani, Nobuya Hayashi

    Plasma Medicine   7   313 - 320   2017.1

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    Influence of plasma irradiation on silkworm
    © 2017 by Begell House, Inc. Silkworms have recently been proposed as an animal model for safety testing in basic research. We propose using silkworms for in vivo trials of direct plasma treatment. In this study, the influence of plasma irradiation on silkworms was investigated using a non-thermal atmospheric pressure plasma. Silkworm survival rate decreased with increasing low-frequency voltage and plasma irradiation period. Further investigation of the plasma-generated agents (oxygen related radicals, UV light, and charged particles), revealed that the contribution of charged particles significantly increases silkworm mortality.

  • ホッとひといき プラズマのほどよい刺激で植物がスクスク育つ

    古閑 一憲

    応用物理   86 ( 1 )   55 - 58   2017.1

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  • Effects of nonthermal plasma jet irradiation on the selective production of H2O2 and NO2- in liquid water

    Giichiro Uchida, Atsushi Nakajima, Taiki Ito, Kosuke Takenaka, Toshiyuki Kawasaki, Kazunori Koga, Masaharu Shiratani, Yuichi Setsuhara

    JOURNAL OF APPLIED PHYSICS   120 ( 20 )   2016.11

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    We present the effects of the application of a nonthermal plasma jet to a liquid surface on H2O2 and NO2- generation in the liquid. Two distinct plasma irradiation conditions, with plasma contact and with no observable plasma contact with the liquid surface, were precisely compared. When the plasma was made to touch the liquid surface, the H2O2 concentration of the plasma-treated water was much higher than the NO2- concentration. In contrast, when no observable contact of the plasma with the liquid surface occurred, the ratio of the NO2- to H2O2 concentration became over 1 and NO2- became more dominant than H2O2 in the plasma-treated water. Our experiments clearly show that reactive oxygen and nitrogen species can be selectively produced in liquid using appropriate plasma-irradiation conditions of the liquid surface. The ratio of NO2- to H2O2 was controlled within a wide range of 0.02-1.2 simply by changing the plasma-irradiation distance from the liquid surface. Published by AIP Publishing.

    DOI: 10.1063/1.4968568

  • Optical Bandgap Energy of Si Nanoparticle Composite Films Deposited by a Multi-Hollow Discharge Plasma Chemical Vapor Deposition Method

    Susumu Toko, Yoshinori Kanemitsu, Hyunwoong Seo, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY   16 ( 10 )   10753 - 10757   2016.10

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    Semiconductor nanoparticles have significant potential for optoelectronic applications such as solar cells and light-emitting diodes. We are developing semiconductor nanoparticle composite films with a wide bandgap to be used as the window layer of solar cells because the bandgap energy increases with a decrease in the size of particles in the nanometer size range due to the quantum size effect. A multi-hollow discharge plasma chemical vapor deposition (CVD) method was used to fabricate Si nanoparticle composite films and control the volume fraction of nanoparticles in the films. The bandgap energy was increased from 2 eV for a crystalline volume fraction X-c of 0.2 to 2.5 eV for X-c = 0.6 and then decreased to 1.1 eV for X-c = 1. The photo and dark conductivity of films indicate high stability against light soaking. Si nanoparticle composite films with bandgap energies above 2.2 eV are thus promising candidate materials for the window layer of thin-film solar cells.

    DOI: 10.1166/jnn.2016.13233

  • Effects of plasma irradiation using various feeding gases on growth of Raphanus sativus L.

    Thapanut Sarinont, Takaaki Amano, Pankaj Attri, Kazunori Koga, Nobuya Hayashi, Masaharu Shiratani

    ARCHIVES OF BIOCHEMISTRY AND BIOPHYSICS   605   129 - 140   2016.9

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    In this work, we have studied the action of dielectric barrier discharge (DBD) plasma irradiation using various feeding gases on seeds of Raphanus sativus L. and analysis their growth. Our experimental data shows that Air, O-2, and NO(10&#37;)+N-2 feeding gases plasma irradiation enhanced plant growth, whereas N-2, He and Ar feeding gases plasma irradiation had little influence on plant growth. Moreover, humid air plasma irradiation was more effective in growth enhancement than dry one. More than 2.3 times faster growth was observed by 3 min air plasma irradiation with 40-90&#37; relative humidity. The reactive species generated by plasma in gas phase were detected using optical emission spectroscopy and in liquid phase by electron spin resonance (ESR) spectroscopy. We concluded that OH and O radicals were key species for plant growth enhancement. (C) 2016 Elsevier Inc. All rights reserved.

    DOI: 10.1016/j.abb.2016.03.024

  • Surface Modification of Polymer Counter Electrode for Low Cost Dye-sensitized Solar Cells

    Hyunwoong Seo, Min-Kyu Son, Shinji Hashimoto, Toshiyuki Takasaki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    ELECTROCHIMICA ACTA   210   880 - 887   2016.8

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    Poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) was already used as a counter electrode material of dye-sensitized solar cells (DSCs) in other previous researches but its low catalytic activity has been a sticking point. Here we report the catalytic activation of PEDOT:PSS counter electrode by the surface modification using nano-particles. Nano-particle addition contributes to widening catalytic interface and improving catalytic characteristics of PEDOT:PSS counter electrode. However, only a few materials are applicable although various nano-particle materials were applied for the counter electrode of DSC. Catalytic characteristics of PEDOT:PSS counter electrodes with nano-particles are analyzed by cyclic voltammetry and electrochemical impedance spectroscopy. Finally, a DSC based on catalytically enhanced polymer counter electrode achieves 0.71 V of V-OC, 12.60 mA cm(-2) of J(SC), 0.75 of FF, and 6.65&#37; of efficiency, and it is higher than 5.60&#37; of efficiency of a DSC based on conventional Pt counter electrode. (C) 2016 Elsevier Ltd. All rights reserved.

    DOI: 10.1016/j.electacta.2016.06.020

  • Effect of Sulfur Doped TiO2 on Photovoltaic Properties of Dye-Sensitized Solar Cells

    Hyunwoong Seo, Sang-Hun Nam, Naho Itagaki, Kazunori Koga, Masaharu Shiratani, Jin-Hyo Boo

    ELECTRONIC MATERIALS LETTERS   12 ( 4 )   530 - 536   2016.7

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    In a dye-sensitized solar cell (DSC), a nano-porous semiconductor layer plays an important role in the performance. It determines open-circuit voltage and it affects the dye adsorption capacity and charge transfer, which are closely associated with photocurrent and overall performance. TiO2 is the most proper material for nano-porous layer since the first development of DSCs. This work focuses on the enhancement of TiO2 by doping. Sulfur (S) doping enhances charge transfer and the photo-conversion of TiO2. Therefore, the increase in photocurrent and efficiency is expected by S doping. S is doped into TiO2 by hydrolysis method. The amount of S is varied and their photo-responses are verified. The most effective S doped TiO2 is applied to DSCs. Overall performance of DSC is enhanced by the addition of S doped TiO2. Especially, the photocurrent is much increased by the improvement on charge transfer, electron lifetime, and photo-conversion. The photovoltaic properties of DSCs are investigated with various ratios of undoped and S doped TiO2. Finally, a DSC based on undoped and S doped TiO2 ratio of 1:1 has the highest efficiency, better than that of a standard DSC based on undoped TiO2.

    DOI: 10.1007/s13391-016-4018-8

  • Two-dimensional concentration distribution of reactive oxygen species transported through a tissue phantom by atmospheric-pressure plasma-jet irradiation

    Toshiyuki Kawasaki, Akihiro Sato, Shota Kusumegi, Akihiro Kudo, Tomohiro Sakanoshita, Takuya Tsurumaru, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani

    APPLIED PHYSICS EXPRESS   9 ( 7 )   2016.7

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    The two-dimensional concentration distribution of reactive oxygen species (ROSs) transported through an agarose-film tissue phantom by atmospheric-pressure plasma-jet irradiation is visualized using a KI-starch gel reagent. Oxygen addition to helium enhances ROS transportation through the film. A radial ROS distribution pattern at the plasma-irradiated film surface changes into a doughnut-shaped pattern after passing through the film. The ROS transportation speed is 0.14-0.2mm/min. We suggest that there are two types of ROS transportation pathways in the plasma-irradiated film: linear and circular. The majority of ROSs are transported through the circular pathway. ROS concentration distributions changed markedly with irradiation distance. Diffusive ROS transportation due to a concentration gradient is negligible in plasma-irradiated films. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/APEX.9.076202

  • Correlation between SiH2/SiH and light-induced degradation of p-i-n hydrogenated amorphous silicon solar cells Reviewed

    Kimitaka Keya, Takashi Kojima, Yoshihiro Torigoe, Susumu Toko, Daisuke Yamashita, Hyunwoong Seo, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 7 )   2016.7

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    We have measured the hydrogen content ratio ISiH2/ISiH associated with Si-H-2 and Si-H bonds in p-i-n (PIN) a-Si:H solar cells by Raman spectroscopy. With decreasing ISiH2/ISiH, the efficiency, short-circuit current density, open-circuit voltage, and fill factor of PIN a-Si: H solar cells after light soaking tend to increase. Namely, ISiH2/ISiH correlates well with light-induced degradation of the cells. While a single I-layer has a low ISiH2/ISiH of 0.03-0.09, a PIN cell has ISiH2/ISiH = 0.18 because many Si-H-2 bonds exist in the P-layer and at the P/I interface of the PIN solar cells. To realize PIN solar cells with higher stability, we must suppress Si-H-2 bond formation in the P-layer and at the P/I interface. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.07LE03

  • Correlation between SiH

    Keya Kimitaka, Kojima Takashi, Torigoe Yoshihiro, Toko Susumu, Yamashita Daisuke, Seo Hyunwoong, Itagaki Naho, Koga Kazunori, Shiratani Masaharu

    Jpn. J. Appl. Phys.   55 ( 7 )   07LE03   2016.6

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    Correlation between SiH
    We have measured the hydrogen content ratio I<inf>SiH2</inf>/I<inf>SiH</inf>associated with Si–H<inf>2</inf>and Si–H bonds in p–i–n (PIN) a-Si:H solar cells by Raman spectroscopy. With decreasing I<inf>SiH2</inf>/I<inf>SiH</inf>, the efficiency, short-circuit current density, open-circuit voltage, and fill factor of PIN a-Si:H solar cells after light soaking tend to increase. Namely, I<inf>SiH2</inf>/I<inf>SiH</inf>correlates well with light-induced degradation of the cells. While a single I-layer has a low I<inf>SiH2</inf>/I<inf>SiH</inf>of 0.03–0.09, a PIN cell has I<inf>SiH2</inf>/I<inf>SiH</inf>= 0.18 because many Si–H<inf>2</inf>bonds exist in the P-layer and at the P/I interface of the PIN solar cells. To realize PIN solar cells with higher stability, we must suppress Si–H<inf>2</inf>bond formation in the P-layer and at the P/I interface.

    DOI: 10.7567/JJAP.55.07LE03

  • Improvement of Charge Transportation in Si Quantum Dot-Sensitized Solar Cells Using Vanadium Doped TiO2

    Hyunwoong Seo, Daiki Ichida, Shinji Hashimoto, Naho Itagaki, Kazunori Koga, Masaharu Shiratani, Sang-Hun Nam, Jin-Hyo Boo

    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY   16 ( 5 )   4875 - 4879   2016.5

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    The multiple exciton generation characteristics of quantum dots have been expected to enhance the performance of photochemical solar cells. In previous work, we first introduced Si quantum dot for sensitized solar cells. The Si quantum dots were fabricated by multi-hollow discharge plasma chemical vapor deposition, and were characterized optically and morphologically. The Si quantum dot-sensitized solar cells had poor performance due to significant electron loss by charge recombination. Although the large Si particle size resulted in the exposure of a large TiO2 surface area, there was a limit to ho much the particle size could be decreased due to the reduced absorbance of small particles. Therefore, this work focused on decreasing the internal impedance to improve charge transfer. TiO2 was electronically modified by doping with vanadium, which can improve electron transfer in the TiO2 network, and which is stable in the redox electrolyte. Photogenerated electrons can more easily arrive at the conductive electrode due to the decreased internal impedance. The dark photovoltaic properties confirmed the reduction of charge recombination, and the photon-to-current conversion efficiency reflected the improved electron transfer. Impedance analysis confirmed a decrease in internal impedance and an increased electron lifetime. Consequently, these improvements by vanadium doping enhanced the overall performance of Si quantum dot-sensitized solar cells.

    DOI: 10.1166/jnn.2016.12210

  • Effects of irradiation distance on supply of reactive oxygen species to the bottom of a Petri dish filled with liquid by an atmospheric O-2/He plasma jet

    Toshiyuki Kawasaki, Shota Kusumegi, Akihiro Kudo, Tomohiro Sakanoshita, Takuya Tsurumaru, Akihiro Sato, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani

    JOURNAL OF APPLIED PHYSICS   119 ( 17 )   2016.5

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    The impact of irradiation distances on plasma jet-induced specific effects on the supply of reactive oxygen species (ROS) to the bottom of a Petri dish filled with liquid was investigated using a KI-starch gel reagent that can be employed as a ROS indicator even in water. O-3 exposure experiments without plasma irradiation were also performed to elucidate the specific effects of the plasma jet. Relative concentrations of ROS transported to the bottom were evaluated using absorbance measurements. The results indicated that ROS supply to the bottom is markedly enhanced by the plasma jet irradiation at shorter irradiation distances, whereas similar results could not be obtained for the O-3 exposure. In these cases, the liquid mixing in the depth direction was also enhanced by the plasma jet irradiation only, and the supply of reactive atomic oxygen to the liquid surface was markedly increased as well. Published by AIP Publishing.

    DOI: 10.1063/1.4948430

  • Polymer counter electrode of poly(3,4-ethylenedioxythiophene):Poly(4-styrenesulfonate) containing TiO2 nano-particles for dye-sensitized solar cells

    Hyunwoong Seo, Min-Kyu Son, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    JOURNAL OF POWER SOURCES   307   25 - 30   2016.3

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    A counter electrode of dye-sensitized solar cells (DSC) is an important component, which often limits the cell performance. Here we report a low-cost and high-performance polymer counter electrode of poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) containing TiO2 nano-particles for dye-sensitized solar cells. Catalytic characteristics of the counter electrode are significantly improved by adding TiO2 nano-particles to PEDOT:PSS. This improvement is attributed to catalytic activation due to an increase in the surface area of the counter electrode and an increase in conductivity of PEDOT:PSS due to its structural change. A dye-sensitized solar cell using the polymer counter electrode shows 8.27&#37; of efficiency and 16.39 mA cm(-2) of short circuit current density, higher than 7.59&#37; of efficiency and 14.75 mA cm(-2) of short circuit current density of a cell with the conventional Pt counter electrode. (C) 2015 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jpowsour.2015.12.112

  • Quantum Characterization of Si Nano-Particles Fabricated by Multi-Hollow Discharge Plasma Chemical Vapor Deposition

    Hyunwoong Seo, Giichiro Uchida, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    SCIENCE OF ADVANCED MATERIALS   8 ( 3 )   636 - 639   2016.3

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    Si is currently the most widely used material in the photovoltaics. Since the first development of Si photovoltaics, various types of Si solar cells, such as single-crystal and multicrystalline, amorphous and thin film, have been developed and commercialized. The present work focused on Si quantum dots as another route to Si photovoltaics. To apply Si quantum dots to photovoltaic devices, the quantum characteristics of Si nano particles should be verified, and so 4 nm crystalline Si nano-particles were fabricated by multi-hollow discharge plasma chemical vapor deposition. The size and distribution of these particles were determined by transmission electron microscopy and compared against theoretically calculated values. These particles were applied to the fabrication of a Schottky cell and the quantum efficiency of the Si quantum dot layer was measured as a function of the incident photon energy. The quantum efficiency was found to exceed 100&#37; and so multiple exciton generation from the Si quantum dots was clearly realized.

    DOI: 10.1166/sam.2016.2520

  • Simple method of improving harvest by nonthermal air plasma irradiation of seeds of Arabidopsis thaliana (L.)

    Kazunori Koga, Sarinont Thapanut, Takaaki Amano, Hyunwoong Seo, Naho Itagaki, Nobuya Hayashi, Masaharu Shiratani

    APPLIED PHYSICS EXPRESS   9 ( 1 )   2016.1

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    We have studied the effects of air nonthermal plasma irradiation of seeds of Arabidopsis thaliana (L.) on their growth from the beginning of cultivation to their harvest. Three minute plasma irradiation of dry seeds resulted in growth acceleration in all the growth stages. Compared with the control, the plasma irradiation led to an 11&#37; shorter harvest period, a 56&#37; increase in total seed weight, a 12&#37; increase in each seed weight, and a 39&#37; increase in seed number. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/APEX.9.016201

  • Effects of deposition rate and ion bombardment on properties of a-C:H films deposited by H-assisted plasma CVD method

    Xiao Dong, Kazunori Koga, Daisuke Yamashita, Hyunwoong Seo, Naho Itagaki, Masaharu Shiratani, Yuichi Setsuhara, Makoto Sekine, Masaru Hori

    JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 1 )   2016.1

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    In our previous study, we realized conformal, subconformal, and anisotropic deposition profiles of hydrogenated amorphous carbon (a-C:H) films formed on trench substrates by plasma CVD using toluene. To obtain information on the film structures, we investigated the effects of deposition rate and ion bombardment on hydrogen bonding configurations and hydrogen content in the a-C: H films deposited by plasma CVD using toluene. The structure of a-C: H films transforms from polymer-like a-C:H (PLCH) for the ion energy <75 eV to diamond-like a-C: H (DLCH) for the ion energy; 75 eV. The hydrogen bonding configurations in a-C: H films are closely related to the ion energy, whereas they are less dependent on ion flux and deposition rate. The mass density increases gradually with decreasing hydrogen content in the PLCH region, and it increases sharply with decreasing hydrogen content in the DLCH region. This difference is due to the different C-C sp(3) concentration in PLCH and DLCH films. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.01AA11

  • Effects of gas flow rate on deposition rate and number of Si clusters incorporated into a-Si:H films

    Susumu Toko, Yoshihiro Torigoe, Kimitaka Keya, Hyunwoong Seo, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 1 )   2016.1

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    The suppression of cluster incorporation into a-Si: H films is the key to better film stability, because incorporated clusters contribute to the formation of SiH2 bonds and hence lead to light-induced degradation of the films. To deposit stable a-Si: H solar cells at a high deposition rate (DR), we studied the effects of the gas flow rate on DR and the number of Si clusters incorporated into a-Si: H films with discharge power as a parameter, using a multihollow discharge-plasma chemical vapor deposition method. We succeeded in depositing high-quality a-Si: H films with the incorporation of few clusters at DR of 0.1nm/s. We also found that, under a low gas flow rate and a high discharge power, high-density clusters exist in plasma and hence DR is reduced as a result of radical loss to the clusters. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.01AA19

  • Influence of ionic liquid and ionic salt on protein against the reactive species generated using dielectric barrier discharge plasma

    Pankaj Attri, Thapanut Sarinont, Minsup Kim, Takaaki Amano, Kazunori Koga, Art E. Cho, Eun Ha Choi, Masaharu Shiratani

    SCIENTIFIC REPORTS   5   2015.12

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    The presence of salts in biological solution can affect the activity of the reactive species (RS) generated by plasma, and so they can also have an influence on the plasma-induced sterilization. In this work, we assess the influence that diethylammonium dihydrogen phosphate (DEAP), an ionic liquid (IL), and sodium chloride (NaCl), an ionic salt (IS), have on the structural changes in hemoglobin (Hb) in the presence of RS generated using dielectric barrier discharge (DBD) plasma in the presence of various gases [O-2, N-2, Ar, He, NO (10&#37;) + N-2 and Air]. We carry out fluorescence spectroscopy to verify the generation of (OH)-O-center dot with or without the presence of DEAP IL and IS, and we use electron spin resonance (ESR) to check the generation of H-center dot and (OH)-O-center dot. In addition, we verified the structural changes in the Hb structure after treatment with DBD in presence and absence of IL and IS. We then assessed the structural stability of the Hb in the presence of IL and IS by using molecular dynamic (MD) simulations. Our results indicate that the IL has a strong effect on the conservation of the Hb structure relative to that of IS against RS generated by plasma.

    DOI: 10.1038/srep17781

  • Gas Flow Rate Dependence of the Discharge Characteristics of a Plasma Jet Impinging Onto the Liquid Surface

    Giichiro Uchida, Atsushi Nakajima, Kosuke Takenaka, Kazunori Koga, Masaharu Shiratani, Yuichi Setsuhara

    IEEE TRANSACTIONS ON PLASMA SCIENCE   43 ( 12 )   4081 - 4087   2015.12

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    We present here an analysis of the discharge characteristics near the liquid surface in the plasma jet operated at a He gas flow rate of 1.5-10 slm. The plasma diameter on the liquid surface increases with an increase in He gas flow rate, which results in an increase in the total amount of charge particles transferred from the plasma to the liquid. We also analyzed the gas flow patterns using a Schlieren gas flow imaging system. The diameter of the laminar flow and the gas flow distance along the liquid surface increase with an increase in He gas flow rate, which well explains the increase in the plasma diameter on the liquid surface. Our experiments clearly demonstrate that high gas flow rate realizes the large reaction area between the water molecule and the plasma in the plasma jet system.

    DOI: 10.1109/TPS.2015.2488619

  • Synthesis of Indium-Containing Nanoparticles in Aqueous Suspension Using Plasmas in Water for Evaluating Their Kinetics in Living Body

    Takaaki Amano, Thapanut Sarinont, Kazunori Koga, Miyuki Hirata, Akiyo Tanaka, Masaharu Shiratani

    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY   15 ( 11 )   9298 - 9302   2015.11

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    Nanoparticles have great potential for medical applications such as cancer therapy, whereas their toxic effects on human body are pointed out. To study kinetics and toxicity of nanoparticles in living body, we synthesized indium-containing nanoparticles in aqueous suspension using pulsed electrical discharge plasmas in water, because no indium compounds exist in the living body in the normal situation and hence indium-containing nanoparticles are useful tracer materials for analyzing kinetics of nanoparticles in living body. The mean size of synthesized primary nanoparticles is 7 nm, whereas the mean size of secondary nanoparticles is 315 nm. EDX and XRD analysis reveal that nanoparticles are indium crystalline and indium hydroxide crystalline with the mass ratio of 8:2. Preliminary subcutaneous administration of nanoparticles to mice shows that indium is transported from subcutaneous to blood. These results show that synthesized indium-containing nanoparticles are useful for analyzing kinetics of nanoparticles in living body.

    DOI: 10.1166/jnn.2015.11427

  • Structural alternation of tandem dye-sensitized solar cells based on mesh-type of counter electrode

    Hyunwoong Seo, Shinji Hashimoto, Daiki Ichida, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    ELECTROCHIMICA ACTA   179   206 - 210   2015.10

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    Tandem dye-sensitized solar cells (DSCs) are very effective to improve light absorption characteristics and overall performance. The structure of conventional tandem DSC is an assembly of two independent DSCs. Therefore, additional TiO2 layer, Pt film, and transparent conductive oxide (TCO) electrodes weaken incident light to the bottom cell and complicate the fabrication as compared with standard DSCs. Here, this work proposed the structural alternation of tandem DSC as a solution. Mesh type of counter electrode was inserted between top and bottom cells instead of TCO electrodes. Two photo electrodes shared electrolyte and counter electrode in this structure. High aperture ratio of mesh increased light penetration into bottom cell and led to the performance improvement. Structural alternation also simplified the fabrication. It could be fabricated like standard DSCs. After dye arrangement and TiO2 layer of bottom cell were controlled, the photovoltaic performance of proposed tandem DSC was enhanced and it was higher than conventional tandem DSC. Finally, the long-term stability of proposed tandem DSC was secured by the control of sealing walls. (C) 2015 Elsevier Ltd. All rights reserved.

    DOI: 10.1016/j.electacta.2015.04.105

  • Synthesis of indium-containing nanoparticles using plasmas in water to study their effects on living body Reviewed

    T. Amano, K. Koga, T. Sarinont, H. Seo, N. Itagaki, M. Shiratani, S. Kitazaki, M. Hirata, Y. Nakatsu, A. Tanaka

    Proc. 68th GEC/9th ICRP/33rd SPP609   LW1.158   2015.9

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    Synthesis of indium-containing nanoparticles using plasmas in water to study their effects on living body
    Nanoparticles can be employed for biomedical applications such as biomarkers, drug delivery systems, and cancer therapies. They are, however, pointed out their adverse effects on human body. Here, we synthesed indium-containing nanoparticles using discharge plasmas with indium electrodes immersed in DI water and administrated nanoparticles to rats to analyze their kinetics in living body. The discharge power was 5.1 W. The electron density is 5x1017/cm3 deduced from Stark broadening of hydrogen lines. TEM observation shows the mean size of primary nanoparticles is 7 nm. The nanoparticles are indium crystalline and indium hydroxide crystalline. The synthesized nanoparticles and purchased nanoparticles (In2O3, <100nm) were administrated to rats using subcutaneous injection. Indium of 166.7 g/day (synthesized) and of 27.8 g/day (purchased) are detected from the urine at 12 weeks after the administration. Synthesized nanoparticles dispersed in water are useful for analyzing kinetics of nanoparticles in living body. Work partly supported by KAKENHI.

  • Attraction during binary collision of fine particles in Ar plasma Reviewed

    M. Soejima, T. Ito, D. Yamashita, N. Itagaki, H. Seo, K. Koga, M. Shiratani

    Proc. 68th GEC/9th ICRP/33rd SPP609   GT1.018   2015.9

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    Attraction during binary collision of fine particles in Ar plasma
    Forces exerted on fine particles in plasmas play central roles in their transport, agglomeration, as well as Coulomb crystals and liquids. The forces are complicated because of charge fluctuation of fine particles, charge screening in plasma, anisotropy of plasma flow, and so on. Various formulas of such forces have been theoretically predicted but many of them have not been supported by experimental results yet. Here we carried out experiments on binary collision of fine particles using Ar rf-discharge plasmas. PMMA fine particles of 10 μm diameter were injected into the plasma and they were levitated around the plasma sheath boundary. The number of fine particles levitated was so small that we can observe non-collective pair interaction. We observed binary collisions of fine particles with a high speed and high resolution camera. We found that repulsion of two fine particles takes place in short distances, whereas attraction takes place in middle distances. These results indicate that inter-molecular like potential exists between them. The attraction corresponds to non-collective fine-particle attraction due to shadow effects.

  • Cluster Incorporation into A-Si:H Films Deposited Using H 2 +SiH 4 Discharge Plasmas Reviewed

    S. Toko, Y. Torigoe, K. Keya, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    Proc. 68th GEC/9th ICRP/33rd SPP609   GT1.152   2015.9

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    Cluster Incorporation into A-Si:H Films Deposited Using H 2 +SiH 4 Discharge Plasmas
    Light-induced degradation is the most important issue for hydrogenated amorphous silicon (a-Si:H) solar cells. Our previous results have suggested that incorporation of clusters into films is responsible for the light-induced degradation. Therefore, it is important to control the incorporation of clusters. Recently, we have developed multi-hollow discharge plasma CVD method, by which clusters are driven toward the downstream region and high quality a-Si:H films can be deposited in the upstream region. Here, we report effects of H2 dilution on cluster incorporation. Cluster size was measured by TEM, and the incorporation amount of clusters was measured with quartz crystal microbalances. H2 dilution leads to smaller clusters and the cluster incorporation in the upstream region increases with H2 dilution because the diffusion velocity of such small clusters much surpasses gas flow velocity.

  • Cross correlation analysis of plasma perturbation in amplitude modulated reactive dusty plasmas Reviewed

    T. Ito, M. Soejima, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani, T. Kobayashi, S. Inagaki

    Proc. 68th GEC/9th ICRP/33rd SPP609   GT1.049   2015.9

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    Cross correlation analysis of plasma perturbation in amplitude modulated reactive dusty plasmas
    Interactions between plasmas and nano-interface are one of the most important issues in plasma processing. We have studied effects of plasma perturbation on growth of nanoparticles in amplitude modulated reactive dusty plasmas and have clarified that amplitude modulation (AM) leads to suppression of growth of nanoparticles [1]. Here we report results of cross correlation analysis of time evolution of laser light scattering intensity from nanoparticles in reactive plasmas. Experiments were carried out using a capacitively-coupled rf discharge reactor with a two-dimensional laser light scattering (LLS) system. We employed Ar +DM-DMOS discharge plasmas to generate nanoparticles. The peaks at higher harmonics and subharmonics in spectra of laser light scattering intensity were detected, suggesting nonlinear coupling between plasma and nanoparticle amount. We found high cross correlation t between waves at AM frequency and its higher harmonics. Namely, perturbation at fAM closely correlates with those at higher harmonics.

  • Deposition rate and etching rate due to neutral radicals and dust particles measured using QCMs together with a dust eliminating filter Reviewed

    R. Katayama, K. Koga, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, M. Tokitani, S. Masuzaki, K. Nishimura, A. Sagara, LHD Experimental Group

    Proc. 68th GEC/9th ICRP/33rd SPP609   LW1.101   2015.9

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    Deposition rate and etching rate due to neutral radicals and dust particles measured using QCMs together with a dust eliminating filter
    We have developed an in-situ method for measuring deposition rate of radicals and dust particles using quartz crystal microbalances (QCMs) together with a dust eliminating filter. The QCMs have three channels of quartz crystals. Channel 1 was used to measure total deposition rate due to radicals and dust particles. Channel 2 was covered with a dust eliminating filter. Channel 3 was covered with a stainless-steel plate. Moreover, all QCMs are covered with a grounded stainless steel mesh for suppressing influx of charged particles. The measurements were conducted in the Large Helical Device in the National Institute for Fusion Science, Japan. Although the deposition measurements during the discharges were difficult, we obtained deposition rate and etching rate by comparing the data before and after each discharge. The frequency difference for channel 1 changes from 0.1 Hz (etching) to -0.5 Hz (deposition), while those for channels 2 and 3 are within a range of +/-0.1 Hz and +/-0.05 Hz, respectively. The QCM method gives information on deposition rate and etching rate due to neutral radicals and dust particles.

  • Effects of electrode structure on characteristics of multi-hollow discharges Reviewed

    Y. Torigoe, K. Keya, S. Toko, H. Seo, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani

    Proc. 68th GEC/9th ICRP/33rd SPP609   LW1.129   2015.9

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    Effects of electrode structure on characteristics of multi-hollow discharges
    Silane plasmas are widely employed for hydrogenated amorphous silicon (a-Si:H) film deposition. Amorphous silicon nanoparticles below 10 nm in size (clusters) are formed in silane plasmas and some of them are incorporated into a-Si:H films, leading to the light induced degradation which is the most important issue for a-Si:H solar cells. To suppress cluster incorporation, a multi-hollow discharge plasma CVD method has been developed and succeeded in depositing highly stable a-Si:H films. For further improvement of the film qualities, we have employed a thicker grounded electrode to suppress plasma expansion toward the deposition region. From optical images of the discharge plasmas, the expansion was significantly suppressed using 10 mm thick grounded electrode. For the 10 mm thick electrode, optical emission intensity ratio of Si* (288 nm) and SiH* (414 nm) ISi*/ISiH*, which shows a ratio of cluster generation ratio and radical ones, was 20&#37; of that for 1mm thick electrode. These results suggest that the generation of clusters was also suppressed using the 10 mm thick grounded electrode.

  • Effects of N2 dilution on fabrication of Ge nanoparticles by rf sputtering Reviewed

    S. Hashimoto, S. Tanami, H. Seo, G. Uchida, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Proc. 68th GEC/9th ICRP/33rd SPP609   LW1.133   2015.9

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    Effects of N2 dilution on fabrication of Ge nanoparticles by rf sputtering
    Multiple exciton generation (MEG) in QDs is expected to enhance significantly the energy conversion efficiency of solar cells. Although there are several reports on MEG characteristics from various QD materials such as PbS, CdSe, CdS ZnS, and Ag2S, such materials have disadvantages of their toxicity and limited resources. Here we have developed quantum-dots (QDs) solar cells using Ge nanoparticles fabricated by rf sputtering method under high pressure. We fabricated Ge nanoparticles by rf sputtering at a pressure of 1.5 Torr. Since the mean free path of Ge atoms is an order of micrometer, and Ge nanoparticles are formed in gas phase. We fabricated Ge nanoparticles using Ar and N2 to terminate surface defects by N. Ge and Ar emission intensities decrease significantly with increasing N2 partial pressure. The electron density was measured with a plasma absorption probe. The electron density decreases with increasing N2 partial pressure.

  • Laser trapped single fine particle as a probe of plasma parameters” Reviewed

    D. Yamashita, M. Soejima, T. Ito, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    Proc. 68th GEC/9th ICRP/33rd SPP609   LW1.104   2015.9

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    Laser trapped single fine particle as a probe of plasma parameters”
    Here we report evaluation of electron density and temperature using optically trapped single fine particle. Experiments were carried out with a radio frequency low pressure plasma reactor, where we set two quartz windows as top and bottom flanges to irradiate an infrared laser light of 1064 nm wavelength from the bottom side. Ar plasmas were generated between a powered ring-electrode set at the bottom of the reactor and a grounded mesh placed at the center of the reactor at 100 Pa by applying 13.56 MHz voltage. The particles injected into the plasmas were monodisperse methyl methacrylate-polymer spheres of 10 μm in diameter. A negatively charged particle, which is suspended plasma sheath boundary, was trapped at the focal point of the irradiated laser light due to the transfer of momentum from the scattering of incident photons. At the beginning of the trapping, particle of 10 μm in size was trapped above 505 μm from the bottom window. After 230 min, the size and position were 9.56 μm and 520 μm, respectively. From the results, the electron density and temperature are deduced to be 1.7×109 cm-3 and 1.9 eV.

  • Raman spectroscopy of PIN hydrogenated amorphous silicon solar cells Reviewed

    K. Keya, Y. Torigoe, S. Toko, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    Proc. 68th GEC/9th ICRP/33rd SPP609   LW1.132   2015.9

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    Raman spectroscopy of PIN hydrogenated amorphous silicon solar cells
    Light-induced degradation of hydrogenated amorphous silicon (a-Si:H) is a key issue for enhancing competitiveness in solar cell market. A-Si:H films with a lower density of Si-H2 bonds shows higher stability. Here we identified Si-H2 bonds in PIN a-Si:H solar cells fabricated by plasma CVD using Raman spectroscopy. A-Si:H solar cell has a structure of B-doped μc-SiC:H (12.5 nm)/ non-doped a-Si:H (250nm)/ P-doped μc-Si:H (40 nm) on glass substrates (Asahi-VU). By irradiating HeNe laser light from N-layer, peaks correspond to Si-H2 bonds (2100 cm-1) and Si-H bonds (2000 cm-1) have been identified in Raman scattering spectra. The intensity ratio of Si-H2 and Si-H ISiH2/ISiH is found to correlate well to light induced degradation of the cells Therefore, Raman spectroscopy is a promising method for studying origin of light-induced degradation of PIN solar cells.

  • Simple Evaluation Method of Atmospheric Plasma Irradiation Dose using pH of Water Reviewed

    K. Koga, T. Sarinont, T. Amano, H. Seo, N. Itagaki, Y. Nakatsu, A. Tanaka, M. Shiratani

    Proc. 68th GEC/9th ICRP/33rd SPP609   LW1.143   2015.9

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    Simple Evaluation Method of Atmospheric Plasma Irradiation Dose using pH of Water
    Atmospheric discharge plasmas are promising for agricultural productivity improvements and novel medical therapies, because plasma provides high flux of short-lifetime reactive species at low temperature, leading to low damage to living body. For the plasma-bio applications, various kinds of plasma systems are employed, thus common evaluation methods are needed to compare plasma irradiation dose quantitatively among the systems. Here we offer simple evaluation method of plasma irradiation dose using pH of water. Experiments were carried out with a scalable DBD device. 300 μl of deionized water was prepared into the quartz 96 microwell plate at 3 mm below electrode. The pH value has been measured just after 10 minutes irradiation. The pH value was evaluated as a function of plasma irradiation dose. Atmospheric air plasma irradiation decreases pH of water with increasing the dose. We also measured concentrations of chemical species such as nitrites, nitrates and H2O2. The results indicate our method is promising to evaluate plasma irradiation dose quantitatively.

  • Substrate temperature dependence of Au-induced crystalline Ge film formation using sputtering deposition Reviewed

    S. Tanami, D. Ichida, D. Hashimoto, G. Uchida, H. Seo, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Proc. 68th GEC/9th ICRP/33rd SPP609   GT1.149   2015.9

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    Substrate temperature dependence of Au-induced crystalline Ge film formation using sputtering deposition
    We are developing Au-induced crystalline Ge film formation using sputtering deposition. For the method, very thin Au films were deposited on SiO2 substrates and then Ge atoms were irradiated to the Au films by sputtering. We found two kinds of Ge film growth: one is Ge film formation on Au films, and the other is Ge film formed between Au films and SiO2. The latter film formation, however, takes place in a narrow temperature range around 140°C. Here we report two kinds of substrate temperature dependence of Ge film formation: one is annealing temperature of Au films, and the other is the substrate temperature dependence during Ge sputtering. 30nm-thick Au films were deposited quartz glass as a catalyst at room temperature by sputtering. Then the Au films were annealed in a temperature range from room temperature to 190 °C in a vacuum. Au grain grows and crystal orientation shows better alignment as the annealing temperature rises. We found that the smaller grain size with random orientation is better for Ge film formed between Au films and SiO2.

  • Real-time mass measurement of dust particles deposited on vessel wall in a divertor simulator using quartz crystal microbalances

    Mizuki Tateishi, Kazunori Koga, Ryu Katayama, Daisuke Yamashita, Kunihiro Kamataki, Hyunwoong Seo, Naho Itagaki, Masaharu Shiratani, Naoko Ashikawa, Suguru Masuzaki, Kiyohiko Nishimura, Akio Sagara

    JOURNAL OF NUCLEAR MATERIALS   463   865 - 868   2015.8

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    We are developing a dust monitoring method using quartz crystal microbalances (QCMs) equipped with a dust eliminating filter. Here we report a dust eliminating ratio of the filter and first measurement results of the QCMs in a divertor simulator. The volume of spherical dust in unit area on the filter and QCM under the filter were 2.09 x 10(-9) and 1.22 x 10(-19) m(3) m(-2), respectively. Thus, the dust eliminating ratio of the filter is 94.2&#37;. The QCM without the filter gives deposition rate due to radicals and dust particles, whereas the QCM with the filter gives deposition rate predominantly due to radicals. From the results, we deduce information of mass fraction of dust particles in deposits. (C) 2014 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jnucmat.2014.10.049

  • Fabrication of ZnInON/ZnO multi-quantum well solar cells

    Koichi Matsushima, Ryota Shimizu, Tomoaki Ide, Daisuke Yamashita, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

    THIN SOLID FILMS   587   106 - 111   2015.7

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    We report on fabrication and photovoltaic characteristics of solar cells with ZnInON/ZnO multi-quantum wells (MQWs) in the intrinsic layer of p-i-n structure by RFmagnetron sputtering. We employed two kinds of p layers: one is p-GaN and the other is p-Si. Under solar simulator light, the short-circuit current (J(sc)) and the open-circuit voltage (V-oc) of the solar cells on p-GaN templates are 1.9 mu A/cm(2) and 0.16 V, whereas J(sc) and V-oc are enhanced to 2.5 mu A/cm(2) and 0.19 V under simultaneous irradiation of green laser light (532 nm) and the solar simulator light. Solar cells on p-Si substrates do not show such enhancement. A possible origin of the enhancement is a large piezoelectric field generated in strained ZnInON wells coherently grown on p-GaN template. (C) 2015 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.tsf.2015.01.012

  • Effects of gas flow on oxidation reaction in liquid induced by He/O-2 plasma-jet irradiation

    Atsushi Nakajima, Giichiro Uchida, Toshiyuki Kawasaki, Kazunori Koga, Thapanut Sarinont, Takaaki Amano, Kosuke Takenaka, Masaharu Shiratani, Yuichi Setsuhara

    JOURNAL OF APPLIED PHYSICS   118 ( 4 )   2015.7

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    We present here analysis of oxidation reaction in liquid by a plasma-jet irradiation under various gas flow patterns such as laminar and turbulence flows. To estimate the total amount of oxidation reaction induced by reactive oxygen species (ROS) in liquid, we employ a KI-starch solution system, where the absorbance of the KI-starch solution near 600 nm behaves linear to the total amount of oxidation reaction in liquid. The laminar flow with higher gas velocity induces an increase in the ROS distribution area on the liquid surface, which results in a large amount of oxidation reaction in liquid. However, a much faster gas flow conversely results in a reduction in the total amount of oxidation reaction in liquid under the following two conditions: first condition is that the turbulence flow is triggered in a gas flow channel at a high Reynolds number of gas flow, which leads to a marked change of the spatial distribution of the ROS concentration in gas phase. Second condition is that the dimpled liquid surface is formed by strong gas flow, which prevents the ROS from being transported in radial direction along the liquid surface. (C) 2015 AIP Publishing LLC.

    DOI: 10.1063/1.4927217

  • Effects of cluster incorporation into hydrogenated amorphous silicon films in initial discharge phase on film stability

    Susumu Toko, Yoshihiro Torigoe, Weiting Chen, Daisuke Yamashita, Hyunwoong Seo, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    THIN SOLID FILMS   587   126 - 131   2015.7

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    We studied the effects of incorporation of hydrogenated amorphous silicon (a-Si:H) nanoparticles (clusters) generated in the initial discharge phase on light induced degradation of a-Si:H films. The amount of clusters incorporated into the films in the initial discharge phase is 15 times larger than that in the steady state. To evaluate the effects of such initial cluster incorporation on stability of a-Si:H films, we fabricated a-Si:H Schottky cells with and without initial cluster incorporation using a multi-hollow discharge plasma chemical vapor deposition method with a shutter and compared cell stability against light exposure. The degradation ratio of the cell without initial cluster incorporation is less than 1&#37; even after 100 hour light soaking of 2.7 suns. Our results show that suppressing initial cluster incorporation into a-Si:H films is a key to stable a-Si:H cells. Moreover, Si-H-2 bonds in films can be reduced down to 1/10 using a cluster eliminating filter. (C) 2015 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.tsf.2015.02.052

  • Effects of discharge voltage on the characteristics of a-C:H films prepared by H-assisted Plasma CVD method Reviewed

    X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    Trans. Mater. Res. Soc. Jpn.   40 ( 2 )   123-128 - 128   2015.7

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    Effects of discharge voltage on the characteristics of a-C:H films prepared by H-assisted Plasma CVD method
    Hydrogen bonding configurations and hydrogen content of a-C:H films deposited by H-assisted plasma CVD were investigated by Fourier transform infrared spectroscopy. Plasma parameters related to deposition rate were derived using optical emission spectroscopy. The a-C:H films contain a large number of sp3 configurations (93&#37;) and a few sp2 configurations (7&#37;). Most of the hydrogen is bonded in methyl groups which shows the structure of deposited a-C:H films is polymer-like carbon. The mass density has nearly linear decreases with increasing the hydrogen atom density, indicating that control of hydrogen content is crucial to obtain a-C:H films of high mass density. A slight increase in radical generation rate and significant increases in etching rate by hydrogen atoms lead to decrease the deposition rate when the discharge voltage increases from 170 V to 180 V.

    DOI: 10.14723/tmrsj.40.123

  • Deposition of Carbon Films on PMMA Using H-assisted Plasma CVD Reviewed

    X. Dong, R. Torigoe, K. Koga, G. Uchida, M. Shiratani, N. Itagaki, Y. Setsuhara, K. Takenaka, M. Sekine, M. Hori

    Jpn. Phys. Soc. Conf. Proc (APPC12)   1   015072   2015.3

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    Deposition of Carbon Films on PMMA Using H-assisted Plasma CVD

    DOI: 10.7566/JPSCP.1.015072

  • Photovoltaic application of Si nanoparticles fabricated by multihollow plasma discharge CVD: Dye and Si co-sensitized solar cells

    Hyunwoong Seo, Daiki Ichida, Shinji Hashimoto, Giichiro Uchida, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 1 )   2015.1

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    Dye-sensitized solar cells (DSCs) still need wider absorption range despite their stable and good performance. This work proposed the co-sensitization of Si quantum dot (QD) and N749 dye for better photo-generation. Si QD was chemically stable with regard to all DSC components and its stability enabled to co-sensitize with dye. Si QDs were fabricated by multihollow discharge plasma chemical vapor deposition and applied for the co-sensitization. Si and dye co-sensitization led to the increase of incident photon to current conversion efficiency and decrease of internal impedance as compared with a standard DSC. As a result, short-circuit current density was increased over 1 mA/cm(2) and the performance was enhanced with co-sensitization from 4.36 to 5.10&#37;. Si and dye co-sensitization was very effective because the enhancement was much larger than the performance of Si QDSC without dye sensitization. (C) 2015 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.54.01AD02

  • Dust Hour Glass in a Capacitive RF Discharge

    Shinya Iwashita, Edmund Schuengel, Julian Schulze, Peter Hartmann, Zoltan Donko, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani, Uwe Czarnetzki

    IEEE TRANSACTIONS ON PLASMA SCIENCE   42 ( 10 )   2672 - 2673   2014.10

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    Cyclic transport of dust particles (dust hour glass) in a capacitively coupled radio frequency discharge with horizontal electrodes is demonstrated. Dust transport toward the upper electrode is initiated by varying the electrical asymmetry of the discharge. A shaped upper electrode guides dust particles to move toward the center of the discharge. Subsequently, the dust drops through the plasma bulk spontaneously, this way returning to the starting location.

    DOI: 10.1109/TPS.2014.2343975

  • Visualization of the Distribution of Oxidizing Substances in an Atmospheric Pressure Plasma Jet

    Toshiyuki Kawasaki, Kota Kawano, Hiroshi Mizoguchi, Yuto Yano, Keisuke Yamashita, Miho Sakai, Takako Shimizu, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani

    IEEE TRANSACTIONS ON PLASMA SCIENCE   42 ( 10 )   2482 - 2483   2014.10

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    A chemical interaction between an atmospheric pressure plasma jet and liquid media is of great interest for biomedical applications. In this paper, the visualization method and typical results of the 2-D distribution of oxidizing substances generated by the plasma jet were reported using the gel visualization reagent. The plasma jet generator consists of a glass tube and two electrodes. As a result, the distribution of oxidizing substances was able to be visualized around the contact point between the plasma jet and the reagent in atmospheric air. The interesting distribution patterns depending on the supplied gas were visually obtained by the reagent. In addition, its relative concentration distribution was also obtained by an absorbance measurement.

    DOI: 10.1109/TPS.2014.2325038

  • Synthesis and characterization of ZnInON semiconductor: a ZnO-based compound with tunable band gap

    N. Itagaki, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani

    MATERIALS RESEARCH EXPRESS   1 ( 3 )   2014.9

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    We have synthesized ZnInON (ZION) semiconductor, a ZnO-based compound with tunable band gap, by radio-frequency magnetron sputtering on quartz glass, a-SiO2/Si, and GaN/Al2O3 templates. From XRD analysis using wide-range reciprocal-space mapping, ZION is deduced to be a pseudo-binary system of wurtzite ZnO and wurtzite InN, the c-axis lattice parameter of which varies continuously from 0.53 to 0.58 nm with decreasing the chemical composition ratio [Zn]/([Zn] + [In]). From optical measurements, we found that ZION has tunability of the band gap over the entire visible spectrum, and the photo-to-dark conductivity ratio is high, of 2.2 x 10(3), demonstrating the high photosensitivity of ZION films. We have also succeeded in the epitaxial growth of ZION films with the composition ratio (InN)/(ZnO) of about 50 at.&#37; by using GaN templates, where the FWHM of the ZION (002) rocking curve is small, of 350 arcsec. These results allow us to conclude that ZION will open up the field of group II-III-V-VI semiconductors that offer new opportunities for design of optoelectronic devices.

    DOI: 10.1088/2053-1591/1/3/036405

  • Off-axis sputter deposition of ZnO films on c-sapphire substrates by utilizing nitrogen-mediated crystallization method Reviewed

    Naho Itagaki, Kazunari Kuwahara, Koichi Matsushima, Daisuke Yamashita, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani

    OPTICAL ENGINEERING   53 ( 8 )   87109   2014.8

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    High-quality epitaxial ZnO films on c-plane sapphire substrates have been obtained by utilizing an off-axis sputtering configuration together with buffer layers prepared via nitrogen-mediated crystallization (NMC). The role of NMC buffer layers is to provide high density of nucleation site and, thus, to reduce the strain energy caused by the large lattice mismatch (18&#37;) between ZnO and sapphire. The NMC buffer layers allow two-dimensional growth of subsequently grown ZnO films, being particularly enhanced by employing an off-axis sputtering configuration in which the substrate is positioned out of the high-energy particles, such as negative oxygen ions originating from the targets. As a result, ZnO films with smooth surfaces (root-mean-square roughness: 0.76 nm) and a high electron mobility of 88 cm(2)/V . s are fabricated. Photoluminescence spectra of the ZnO films show strong near-band-edge emission, and the intensity of the orange-red defect emission significantly decreases with increasing horizontal distance between the target and the substrate. From these results, we conclude that off-axis sputtering together with NMC buffer layers is a promising method for obtaining high-quality epitaxial ZnO films. (C) The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

    DOI: 10.1117/1.OE.53.8.087109

  • Plasma induced long-term growth enhancement of Raphanus sativus L. using combinatorial atmospheric air dielectric barrier discharge plasmas

    Satoshi Kitazaki, Thapanut Sarinont, Kazunori Koga, Nobuya Hayashi, Masaharu Shiratani

    CURRENT APPLIED PHYSICS   14   S149 - S153   2014.7

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    Combinatorial analysis has been carried out to investigate the long-term effects of plasma irradiation of radish seeds on the subsequent sprout growth (Raphanus sativus L.) using atmospheric dielectric barrier discharge plasmas in air. The average seedling length was maximized with 180 s of plasma irradiation when the seed was 5 mm from the electrode edge and 3 mm below the electrode. With these parameters the average seedling length was 250&#37; longer than that not irradiated after three days of cultivation. Observation of the seeds using an infrared (IR) camera and scanning electron microscopy revealed that the temperature rise and etching of the seeds during the plasma irradiation have little effect on growth enhancement. The interaction between radicals and seeds for a duration of 180 s leads to the growth enhancement of radish sprouts for 7 days. (C) 2014 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.cap.2013.11.056

  • Performance dependence of Si quantum dot-sensitized solar cells on counter electrode

    Hyunwoong Seo, Daiki Ichida, Giichiro Uchida, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    JAPANESE JOURNAL OF APPLIED PHYSICS   53 ( 5 )   2014.5

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    Au counter electrode is generally used with polysulfide electrolyte for quantum dot-sensitized solar cells (QDSCs) due to degradation of QD by iodine electrolyte and strong interaction between Pt counter electrode and S2- ions in polysulfide electrolyte. In this work, the effects of the thickness and morphology of Au counter electrode on the performance of Si QDSC were investigated. Au film thickness was linearly controlled from 5 to 500 nm by deposition time. Cyclic voltammetry and impedance analysis clarified the catalytic activity of counter electrode, surface resistance of transparent conductive oxide (TCO), and the charge transportation at the counter electrode. The increase of Au film thickness reduced the surface resistance of TCO with increased conductivity. No significant difference in the redox reaction from electrolyte to Si QDs was observed for Au film thickness from 20 to 500 nm. Catalytic reaction of counter electrode was activated with the increase of Au film thickness up to 200 nm. The impedance of charge transportation at the counter electrode was also decreased with Au deposition. Their surface resistance, catalytic activity and internal resistance were reflected in overall performance. Consequently, Si QDSC with 200-nm-thick Au counter electrode had the best performance. (C) 2014 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.53.05FZ01

  • Electrochemical impedance analysis on the additional layers for the enhancement on the performance of dye-sensitized solar cell

    Hyunwoong Seo, Min-Kyu Son, Songyi Park, Myeongsoo Jeong, Hee-Je Kim, Giichiro Uchida, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    THIN SOLID FILMS   554   122 - 126   2014.3

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    A dye-sensitized solar cell is one of the representative photochemical solar cells. It has been actively studied and its performance has been much enhanced so far. For better performance, various additional layers such as compact, barrier, and light scattering layers have been applied. Compact and barrier layers suppress the charge recombination with redox electrolyte and light scattering layer improves the light harvesting. Although it was confirmed that these layers were clearly effective for the performance enhancement, there is still a variety of opinions concerning their electrochemical impedance analyses. Therefore, this work tried to analyze their effect on the internal impedance using electrochemical impedance spectroscopy. The most widely used materials were employed for the fabrication of additional layers. TiCl4 and Zn(NO3)(2)-6H(2)O aqueous solutions, and a 400 nmsized TiO2 were used for compact, barrier, and light scattering layers, respectively. The photovoltaic characteristics confirmed their effect on the performance and their impedance spectrawere analyzed according to high, middle, and low frequency bands. As a result, these layers mainly affected the impedance in the middle frequency range because the change of TiO2/dye/electrolyte interface was significantly associated with this impedance. Finally, all three layers were applied to a single cell and the performance was considerably increased with reduced charge recombination and improved light harvesting. (C) 2013 Elsevier B. V. All rights reserved.

    DOI: 10.1016/j.tsf.2013.08.103

  • Analysis on the Photovoltaic Property of Si Quantum Dot-Sensitized Solar Cells

    Hyunwoong Seo, Daiki Ichida, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    INTERNATIONAL JOURNAL OF PRECISION ENGINEERING AND MANUFACTURING   15 ( 2 )   339 - 343   2014.2

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    This work first introduced Si quantum dots (QDs) for QD-sensitized solar cells (QDSCs). However, the particle size of Si QDs, which had visible light absorption, was relatively large. The paint-type Si QDSC was proposed in this work because Si QDs could not penetrate into nano-porous TiO2 network. Si QDs were synthesized by multi-hollow plasma discharge CVD and mixed with TiO2 paste. For better performance, thickness of Si-TiO2 layer was varied by coating times and Si-TiO2 films were optically and electrically analyzed. As a result, 6 times screen printed Si-TiO2 film had the best performance with the smallest internal impedance and the highest photon to current efficiency.

    DOI: 10.1007/s12541-014-0343-8

  • Performance enhancement of dye and Si quantum dot hybrid nanostructured solar cell with TiO2 barrier Reviewed

    H. Seo, D. Ichida, S. Hashimoto, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    Trans. Mater. Res. Soc. Jpn.   39 ( 3 )   321 - 324   2014.1

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    Performance enhancement of dye and Si quantum dot hybrid nanostructured solar cell with TiO2 barrier
    Dye and quantum dot (QD) are representative sensitizers of the photochemical solar cells. Dye has the highest efficiency in the whole sensitizers. QDs have relatively low performance but their multiple exciton generation enhanced theoretical efficiency from 33 to 44&#37; and expected to achieve high efficiency. This work tried to enhance the photovoltaic performance with the co-sensitization of N719 dye and Si QD. The performance of dye and QD co-sensitized solar cell was not much enhanced because of electron loss of charge recombination. Therefore, TiO2 barrier layer was introduced on TiO2 and Si QD. It blocked the charge recombination with redox electrolyte. It also helped better electron injection from excited dye to TiO2 with strengthened dye adsorption. Consequently, the performance of co-sensitized solar cell was enhanced with reduced charge recombination and increased dye adsorption.

    DOI: 10.14723/tmrsj.39.321

  • Theory for correlation between plasma fluctuation and fluctuation of nanoparticle growth in reactive plasmas

    Masaharu Shiratani, Kazunori Koga, Kunihiro Kamataki, Shinya Iwashita, Giichiro Uchida, Hyunwoong Seo, Naho Itagaki

    JAPANESE JOURNAL OF APPLIED PHYSICS   53 ( 1 )   2014.1

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    We propose a simple theoretical model that describes the correlation between plasma fluctuation and fluctuation of nanoparticle growth in reactive plasmas. The model predicts that the high density of nanoparticles brings about small mean-size, narrow size dispersion, and sharp size slope on the large side of the size distribution. The model suggests some methods of tuning the size dispersion, and it also suggests that a self-limiting process is the key to markedly suppressing fluctuations in nanostructure fabrication. All predictions coincide with the experimental results reported previously. Moreover, the model suggests that plasma fluctuation induces both the linear and nonlinear responses of nanoparticle growth. (C) 2014 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.53.010201

  • A model for correlation between plasma fluctuation and fluctuation of nanoparticle growth in reactive plasmas Reviewed

    M. Shiratani, K. Koga, K. Kamataki, S. Iwashita, Y. Morita, H. Seo, N. Itagaki, G. Uchida

    Proc. 8th Int. Conf. Reactive Plasmas   4B-PM-O1   2014.1

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    A model for correlation between plasma fluctuation and fluctuation of nanoparticle growth in reactive plasmas

  • Analysis of fluctuation of Ar metastable density and nanoparticle amount in capacitively coupled discharges with amplitude modulation Reviewed

    Y. Morita, T. Ito, S. Iwashita, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Proc. 8th Int. Conf. Reactive Plasmas   5P-AM-S02-P1   2014.1

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    Analysis of fluctuation of Ar metastable density and nanoparticle amount in capacitively coupled discharges with amplitude modulation

  • Combinatorial evaluation of optical properties of crystalline Si nanoparticle embedded Si films deposited by a multi-hollow discharge plasma CVD method Reviewed

    Y. Kanemitsu, G. Uchida, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Proc. 8th Int. Conf. Reactive Plasmas   6P-AM-S08-P35   2014.1

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    Combinatorial evaluation of optical properties of crystalline Si nanoparticle embedded Si films deposited by a multi-hollow discharge plasma CVD method

  • Coupling between radicals and nanoparticles in initial growth phase in reactive plasmas with amplitude modulation Reviewed

    K. Koga, Y. Morita, K. Kamataki, D. Yamashita, N. Itagaki, G. Uchida, M. Shiratani

    Proc. 8th Int. Conf. Reactive Plasmas   3B-WS-14   2014.1

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    Coupling between radicals and nanoparticles in initial growth phase in reactive plasmas with amplitude modulation

  • Deposition of Crystalline Ge Nanoparticle Films Varying H2 Dilution Ratio Using High Pressure rf Magnetron Sputtering Reviewed

    S. Hashimoto, D. Ichida, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Proc. 8th Int. Conf. Reactive Plasmas   6P-AM-S08-P32   2014.1

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    Deposition of Crystalline Ge Nanoparticle Films Varying H2 Dilution Ratio Using High Pressure rf Magnetron Sputtering

  • Effects of amplitude modulation on deposition of hydrogenated amorphous silicon films using multi-Hollow discharge plasma CVD method Reviewed

    Y. Torigoe, Y. Hashimoto, S. Toko, Y. Kim, D. Yamashita, H. Seo, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani

    Proc. 8th Int. Conf. Reactive Plasmas   6P-AM-S08-P36   2014.1

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    Effects of amplitude modulation on deposition of hydrogenated amorphous silicon films using multi-Hollow discharge plasma CVD method

  • Epitaxial growth of ZnO films on sapphire substrates by magnetron sputtering: Effects of buffer layers prepared via nitrogen mediated crystallization Reviewed

    T. Ide, K. Matsushima, R. Shimizu, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    Proc. 8th Int. Conf. Reactive Plasmas   4P-PM-S08-P10   2014.1

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    Epitaxial growth of ZnO films on sapphire substrates by magnetron sputtering: Effects of buffer layers prepared via nitrogen mediated crystallization

  • Fabrication of In-rich ZnInON filmswith narrow band gap by RF magnetron sputtering Reviewed

    K. Matsushima, R. Shimizu, T. Ide, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    Proc. 8th Int. Conf. Reactive Plasmas   5P-PM-S08-P02   2014.1

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    Fabrication of In-rich ZnInON filmswith narrow band gap by RF magnetron sputtering

  • Fabrication of SiC nanoparticles as high capacity electrodes for Li-ion batteries Reviewed

    G. Uchida, K. Kamataki, D. Ichida, Y. Morita, H. Seo, N. Itagaki, K. Koga, T. Ishihara, M. Shiratani

    Proc. 8th Int. Conf. Reactive Plasmas   4C-PM-O1   2014.1

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    Fabrication of SiC nanoparticles as high capacity electrodes for Li-ion batteries

  • Fabrication of size-controlled Ge nanoparticle films varying gas flow rate using high pressure rf magnetron sputtering method Reviewed

    D. Ichida, S. Hashimoto, G. Uchida, H. Seo, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Proc. 8th Int. Conf. Reactive Plasmas   6P-AM-S08-P33   2014.1

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    Fabrication of size-controlled Ge nanoparticle films varying gas flow rate using high pressure rf magnetron sputtering method

  • Fine response of deposition rate of Si films deposited by multi-hollow discharge plasma CVD with amplitude modulation Reviewed

    S. Toko, Y. Hashimoto, Y. Kanemitu, Y. Torigoe, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Proc. 8th Int. Conf. Reactive Plasmas   5P-AM-S05-P17   2014.1

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    Fine response of deposition rate of Si films deposited by multi-hollow discharge plasma CVD with amplitude modulation

  • Magnetron sputtering of low-resistive In2O3:Sn films with buffer layers fabricated via nitrogen mediated crystallization Reviewed

    K. Oshikawa, I. Suhariadi, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, N. Itagaki

    Proc. 8th Int. Conf. Reactive Plasmas   5P-PM-S08-P07   2014.1

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    Magnetron sputtering of low-resistive In2O3:Sn films with buffer layers fabricated via nitrogen mediated crystallization

  • Nanoparticle amount in reactive plasmas with amplitude modulation detected by twodimensional laser light scattering method Reviewed

    T. Ito, Y. Morita, S. Iwashita, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Proc. 8th Int. Conf. Reactive Plasmas   5P-AM-SPD-P01   2014.1

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    Nanoparticle amount in reactive plasmas with amplitude modulation detected by twodimensional laser light scattering method

  • Raman spectroscopy of a fine particle optically trapped in plasma”, Proc. 8th Int. Conf. Reactive Plasmas Reviewed

    D. Yamashita, K. Koga, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani

    Proc. 8th Int. Conf. Reactive Plasmas   5P-AM-S05-P23   2014.1

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    Raman spectroscopy of a fine particle optically trapped in plasma”, Proc. 8th Int. Conf. Reactive Plasmas

  • Spatial profile of flux of dust particles in hydrogen helicon plasmas”, Proc. 8th Int. Conf. Reactive Plasmas Reviewed

    M. Tateishi, K. Koga, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, the LHD Experimental Group

    Proc. 8th Int. Conf. Reactive Plasmas   5P-AM-S05-P21   2014.1

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    Spatial profile of flux of dust particles in hydrogen helicon plasmas”, Proc. 8th Int. Conf. Reactive Plasmas

  • Sputter Deposition of Ga-doped Zinc Oxide (GZO) Films with Buffer Layers Fabricated via Nitrogen Mediated Crystallization Reviewed

    T. Nakanishi, K. Oshikawa, I. Suhariadi, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    Proc. 8th Int. Conf. Reactive Plasmas   5P-AM-S05-P19   2014.1

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    Sputter Deposition of Ga-doped Zinc Oxide (GZO) Films with Buffer Layers Fabricated via Nitrogen Mediated Crystallization

  • Sputtering fabrication of a novel widegap semiconductor ZnGaON for optoelectronic devices with wide bandgap for optical device Reviewed

    R. Shimizu, K. Matsushima, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    Proc. 8th Int. Conf. Reactive Plasmas   5P-PM-S08-P03   2014.1

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    Sputtering fabrication of a novel widegap semiconductor ZnGaON for optoelectronic devices with wide bandgap for optical device

  • Study on nitrogen desorption behavior of sputtered ZnO for transparent conducting oxide Reviewed

    I. Suhariadi, K. Oshikawa, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    Proc. 8th Int. Conf. Reactive Plasmas   5P-PM-S08-P05   2014.1

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    Study on nitrogen desorption behavior of sputtered ZnO for transparent conducting oxide

  • Subacute toxicity of gallium arsenide, indium arsenide and arsenic trioxide following intermittent intrantracheal instillations to the lung of rats Reviewed

    A. Tanaka, M. Hirata, K. Koga, N. Itagaki, M. Shiratani, N. Hayashi, G. Uchida

    Proc. 8th Int. Conf. Reactive Plasmas   5P-AM-S2-P35   2014.1

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    Subacute toxicity of gallium arsenide, indium arsenide and arsenic trioxide following intermittent intrantracheal instillations to the lung of rats

  • Substrate temperature dependence of hydrogen content of a-Si:H film deposited with a cluster-eliminating filter Reviewed

    Y. Hashimoto, S. Toko, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Proc. 8th Int. Conf. Reactive Plasmas   6P-AM-S08-P37   2014.1

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    Substrate temperature dependence of hydrogen content of a-Si:H film deposited with a cluster-eliminating filter

  • Combinatorial Plasma CVD of Si Nanoparticle Composite Films for Band Gap Control Reviewed

    G. Uchida, Y. Kanemitsu, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    JPS Conf. Proc   1   15080   2014.1

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    Combinatorial Plasma CVD of Si Nanoparticle Composite Films for Band Gap Control
    Crystalline Si nanoparticles were successfully fabricated by a multi-hollow discharge plasma CVD method. Optical band gap of Si-nanoparticle composite films was controlled in a range of 1.6?1.9?eV by the volume fraction of Si nanoparticles in the films. SiN nanoparticle composite films were also successfully produced using a double multi-hollow discharge plasma CVD method in SiH4/H2 and N2 gas mixture. High optical band gap of 2.1?2.2?eV was achieved by adding N atoms to the Si naoparticles.

    DOI: 10.7566/JPSCP.1.015080

  • Correlation between nanoparticle growth and plasma parameters in low pressure reactive VHF discharge plasmas Reviewed

    M. Shiratani, Y. Morita, K. Kamataki, H. Seo, G. Uchida, N. Itagaki, K. Koga

    JPS Conf. Proc   1   15083   2014.1

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    Correlation between nanoparticle growth and plasma parameters in low pressure reactive VHF discharge plasmas
    We report experimental results on correlation between plasma parameters and growth of nanoparticles in capacitively-coupled VHF discharges with amplitude modulation (AM) obtained using two dimensional laser light scattering (LLS) method. Power spectra of floating potential, Ar 810.27?nm emission intensity, and LLS intensity have peaks at the modulation frequency of 100?Hz and its second harmonics, indicating linear correlation between plasma parameters and growth of nanoparticles, that is, their size and/or density. The power spectrum of LLS intensity has another peak at 60?Hz, which coincides with our theoretical prediction of plasma fluctuation induceed nonlinear response of nanoparticle growth.

    DOI: 10.7566/JPSCP.1.015083

  • Effects of Grid DC Bias on Incorporation of Si Clusters into Amorphous Silicon Thin Films in Multi-Hollow Discharge Plasma CVD Reviewed

    S. Toko, Y. Kim, Y. Hashimoto, Y. Kanemitu, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    JPS Conf. Proc   1   15069   2014.1

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    Effects of Grid DC Bias on Incorporation of Si Clusters into Amorphous Silicon Thin Films in Multi-Hollow Discharge Plasma CVD
    Si clusters formed in silane discharge plasmas are mainly responsible for light induced degradation of hydrogenated amorphous Si (a-Si:H) thin films deposited by the plasmas. Here we have investigated effects of grid DC bias on incorporation amount of Si clusters into a-Si:H films in multi-hollow discharge plasma CVD reactor using quartz crystal microbalances, by which volume fraction of Si clusters in deposited films is quantitatively measured. When the grid potential is lower than plasma potential, the negatively charged clusters are repelled away from the grid by electrostatic force, resulting in lower volume fraction.

    DOI: 10.7566/JPSCP.1.015069

  • Effects of H2 Gas Addition on Structure of Ge Nanoparticle Films Deposited by High-pressure RF Magnetron Sputtering Method Reviewed

    G. Uchida, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    JPS Conf. Proc   1   15082   2014.1

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    Effects of H2 Gas Addition on Structure of Ge Nanoparticle Films Deposited by High-pressure RF Magnetron Sputtering Method
    We have deposited crystalline Ge nanoparticle films using a radio frequency magnetron sputtering method in argon and hydrogen gas mixture under a high pressure condition. Raman spectra and X-ray diffraction pattern of Ge nanoparticle films show a transition from amorphous to crystalline by adding H2 gas.

    DOI: 10.7566/JPSCP.1.015082

  • Spatial Profile of Flux of Dust Particles Generated due to Interaction between Hydrogen Plasmas and Graphite Target Reviewed

    M. Tateishi, K. Koga, D. Yamashita, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, the LHD Experimental Group

    JPS Conf. Proc   1   15020   2014.1

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    Spatial Profile of Flux of Dust Particles Generated due to Interaction between Hydrogen Plasmas and Graphite Target
    We have measured spatial profile of flux of dust particles generated due to interaction between H2 plasmas and graphite target in a divertor simulator to study transport mechanism of dust particles. Dust particles were collected on c-Si substrates and observed with a scanning electron microscope. We have found nanostructure of 10?nm in size on the substrate surface. Dust fluxes of both spherical dust particles and flakes are maximum at a position between 80 and 140?mm from the center of the plasma column. The spatial profile of dust flux is determined by the balance between deposition of nanoparticles and their etching by H atoms.

    DOI: 10.7566/JPSCP.1.015020

  • Study on the Crystal Growth Mechanism of ZnO Films Fabricated Via Nitrogen Mediated Crystallization Reviewed

    I. Suhariadi, K. Oshikawa, D. Yamashita, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, N. Itagaki

    JPS Conf. Proc   1   15064   2014.1

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    Study on the Crystal Growth Mechanism of ZnO Films Fabricated Via Nitrogen Mediated Crystallization
    Effects of nitrogen addition to the sputtering atmosphere on crystal growth of ZnO films have been studied. The AFM characterization shows that the nitrogen suppresses the nucleation in the early stage of the crystal growth leading to a non-continue film structure with sparsely distributed grains. As the deposition time increases, the physical properties of the ZnO films are modified by enhancement of adatoms migration at the growing surface, thus homogenous and dense films with larger grain size are obtained. Utilizing these ZnO films as buffer layers with film thickness greater than 4?nm, the electrical resistivity of ZnO:Al films have been significantly decreased from 7.8 × 10?3?Ω?cm to 6.7 × 10?4?Ω?cm.

    DOI: 10.7566/JPSCP.1.015064

  • Nanostructure control of Si and Ge quantum dots based solar cells using plasma processes

    Masaharu Shiratani, Giichiro Uchida, Hyun Woong Seo, Daiki Ichida, Kazunori Koga, Naho Itagaki, Kunihiro Kamataki

    Materials Science Forum   783-786   2022 - 2027   2014.1

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    Nanostructure control of Si and Ge quantum dots based solar cells using plasma processes
    We report characteristics of quantum dot (QD) sensitized solar cells using Si nanoparticles and Ge nanoparticles. Si nanoparticles were synthesized by multi-hollow discharge plasma chemical vapor deposition, whereas Ge nanoparticles were done by a radio frequency magnetron sputtering using Ar+H2 under high pressure conditions. The electrical power generation from Si QDs and Ge QDs was confirmed. Si QD sensitized solar cells show an efficiency of 0.024&#37;, fill factor of 0.32, short-circuit current of 0.75 mA/cm2 and open-circuit voltage of 0.10 V, while Ge QD sensitized solar cells show an efficiency of 0.036&#37;, fill factor of 0.38, short-circuit current of 0.64 mA/cm2 and open-circuit voltage of 0.15 V. © (2014) Trans Tech Publications, Switzerland.

    DOI: 10.4028/www.scientific.net/MSF.783-786.2022

  • スパッタリング成膜法による高品質酸化亜鉛薄膜の形成 Invited Reviewed

    板垣奈穂, 古閑一憲, 白谷正治

    応用物理   83   385 - 389   2014.1

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    Sputter deposition of high quality ZnO films
    We have developed a novel fabrication method based on sputtering, “Impurity Mediated Crystallization (IMC)”, for crystal growth control of ZnO. The crystal grain density as well as the surface morphology of ZnO films have been controlled by the adsorption/desorption behavior of nitrogen atoms at the film surface. As a result, two kinds of ZnO films have been fabricated, the properties of which are far superior to those of conventional ZnO films. One is ZnO:Al transparent conducting oxide with a low resistivity of 3×10-4Ω?cm in the thickness range of 20-200 nm, and the other is single crystalline ZnO with an atomically flat surface.

  • The improvement on the performance of quantum dot-sensitized solar cells with functionalized Si

    Hyunwoong Seo, Yuting Wang, Muneharu Sato, Giichiro Uchida, Kazunori Koga, Naho Itagaki, Kunihiro Kamataki, Masaharu Shiratani

    THIN SOLID FILMS   546   284 - 288   2013.11

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    Quantum dots (QDs) have been attractive recently with their multiple exciton generation characteristics. QD solar cells can more effectively use the incident energy because one or more electrons are generated with the photon of high energy. They have less heat loss and higher theoretical efficiency (44&#37;) than single exciton generation solar cells (33&#37;). This work focused on Si as alternative to conventional QD materials. Si has QD's unique characteristics such as the quantum size effect and quantum confinement with non-toxicity and abundance. Si QDs were fabricated by the multi-hollow discharge plasma chemical vapor deposition and applied to QD-sensitized solar cells (QDSCs). Contrary to the good characteristics of Si QDs, Si QDSCs had poor performance as compared with conventional QDSCs because of the weak combination between Si QDs and TiO2. Small amounts of adsorbed Si QD on TiO2 made low photocurrent and TiO2 surface widely exposed to redox electrolyte caused charge recombination, the decrease of open-circuit voltage, and low fill factor. For improving their combination, Si QDs were functionalized. The electron transfer from Si to TiO2 and the bonding with TiO2 were improved and more Si QDs were adsorbed by the functionalization. In the functionalization process, the linking source is one of the key parameters. Therefore, 4-vinylbenzoic acid was controlled and its effect was analyzed. The change in the photovoltaic parameters according to the concentration of 4-vinylbenzoic acid and the performance dependence were investigated. In order to verify their characteristics, the effects in terms of the photovoltaic performance, electrochemical impedance, and optical properties were examined. (C) 2013 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.tsf.2013.04.073

  • Characteristics of Crystalline Silicon/Si Quantum Dot/Poly(3,4-ethylenedioxythiophene) Hybrid Solar Cells

    Giichiro Uchida, Yuting Wang, Daiki Ichida, Hyunwoong Seo, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 11 )   2013.11

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    Here, we report the characteristics of a novel organic/inorganic hybrid photovoltaic device using a Si quantum dot (QD) layer synthesized by multi-hollow discharge plasma chemical vapor deposition. The hybrid device has a p-i-n structure, which consists of a crystalline Si (c-Si) substrate, a Si QD layer, and poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate) (PEDOT:PSS). We have examined the absorption coefficient and photoconductivity of Si QD layers, and confirmed electricity generation from Si QD layers. We have measured the current-voltage characteristics and incident photon-to-current conversion efficiency (IPCE) of c-Si/Si QD/poly(3,4-ethylenedioxythiophene) (PEDOT) hybrid solar cells. This hybrid device shows an energy conversion efficiency of 2.84&#37;, a short-circuit current of 6.84 mA/cm(2), an open-circuit voltage of 0.73 V, and a fill factor of 0.58. A high IPCE value of 82.8&#37; is obtained at a short wavelength of 460 nm. (C) 2013 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.52.11NA05

  • Correlation between Volume Fraction of Silicon Clusters in Amorphous Silicon Films and Optical Emission Properties of Si* and SiH*

    Yeonwon Kim, Kosuke Hatozaki, Yuji Hashimoto, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani

    JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 11 )   2013.11

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    The volume fraction of silicon clusters in amorphous silicon (a-Si: H) films has been investigated using specially designed quartz crystal microbalances (QCMs) together with optical emission spectroscopy (OES). The optical emission intensities of Si* and SiH* and their intensity ratios are selected for comparison with the QCM results. We show that the volume fraction of silicon clusters strongly correlates with not only the electron temperature but also the SiH* intensity. This suggests that the ratios of Si*/SiH* and SiH* can be used to predict the volume fraction of Si clusters in a-Si: H films. (C) 2013 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.52.11NA07

  • Effects of Nitrogen on Crystal Growth of Sputter-Deposited ZnO Films for Transparent Conducting Oxide

    Iping Suhariadi, Kouichiro Oshikawa, Kazunari Kuwahara, Kouichi Matsushima, Daisuke Yamashita, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

    JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 11 )   2013.11

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    We have studied the effects of the N-2 gas flow rate on the surface morphology of ZnO films deposited by the sputtering of a ZnO target using Ar/N-2. Height-height correlation function (HHCF) analysis indicates that introducing a small amount of N-2 (<5 sccm) to the sputtering atmosphere enhances adatom migration, leading to a larger grain size in the ZnO films associated with an increase in the lateral correlation length. The HHCF analysis also reveals that films deposited with and without N-2 exhibit a self-affine fractal surface structure. We demonstrate that utilizing such ZnO films deposited using Ar/N-2 as buffer layers, the crystallinity of ZnO:Al (AZO) films on the buffer layers can be greatly improved. The electrical resistivity of 100-nm-thick AZO films decreases from 1.8 x 10(-3) to 4.0 x 10(-4) Omega.cm by utilizing a ZnO buffer layers prepared at N-2 flow rate of 5 sccm. (C) 2013 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.52.11NB03

  • Epitaxial Growth of ZnInON Films with Tunable Band Gap from 1.7 to 3.3 eV on ZnO Templates

    Koichi Matsushima, Tadafumi Hirose, Kazunari Kuwahara, Daisuke Yamashita, Giichiro Uchida, Hyunwoong Seo, Kunihiro Kamataki, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

    JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 11 )   2013.11

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    Epitaxial ZnInON (ZION) films with a tunable band gap have been successfully fabricated by RF magnetron sputtering on ZnO templates prepared via nitrogen mediated crystallization (NMC). X-ray diffraction (XRD) measurements show that the full widths at half maximum of the rocking curves from (002) and (101) planes are small at 0.10 and 0.08 degrees, respectively, indicating a high crystallinity with good in-plane and out-of-plane alignments. Since the coherent growth of 35-nm-thick ZION films on NMC-ZnO templates is deduced from the reciprocal space mapping around the (105) diffraction, there is little lattice relaxation at the interface between the films and templates, which is significant in terms of the suppression of carrier recombination. The band gap of the ZION films has been tuned in a wide range of 1.7-3.3 eV by changing the Zn:In ratio. These results indicate that ZION is a potential absorption layer material of solar cells. (C) 2013 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.52.11NM06

  • Flux Control of Carbon Nanoparticles Generated due to Interactions between Hydrogen Plasmas and Graphite Using DC-Biased Substrates

    Kazunori Koga, Mizuki Tateishi, Katsushi Nishiyama, Giichiro Uchida, Kunihiro Kamataki, Daisuke Yamashita, Hyunwoong Seo, Naho Itagaki, Masaharu Shiratani, Naoko Ashikawa, Suguru Masuzaki, Kiyohiko Nishimura, Akio Sagara

    JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 11 )   2013.11

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    Flux control of dust particles in a nanometer size range using dc bias voltage is discussed based on dust collection in a divertor simulator employed helicon hydrogen discharges. To discuss mechanisms of flux control, we have estimated etching rate of deposited dust particles due to hydrogen plasma irradiation and have measured current density toward the dc biased substrates. We have found the contribution of the etching can be negligible in a dc bias voltage V-bias range between similar to 50 and 70 V. Clear correlation between V-bias dependence of current density and that of dust flux shows electrostatic force is one of important forces for controlling flux of dust particles. (C) 2013 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.52.11NA08

  • Improvement on the electron transfer of dye-sensitized solar cell using vanadium doped TiO2

    Hyunwoong Seo, Yuting Wang, Daiki Ichida, Giichiro Uchida, Naho Itagaki, Kazunori Koga, Masaharu Shiratani, Sang-Hun Nam, Jin-Hyo Boo

    Japanese Journal of Applied Physics   52 ( 11 )   2013.11

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    In dye-sensitized solar cells, nanoporous structure of TiO2 is very important for efficient cell because lots of dye molecules are adsorbable and they are the source of the photocurrent. However, the internal impedance of TiO2 is relatively large and it limits the performance. For better performance, vanadium was doped into TiO2 in this work. Doping different material generally improves the characteristics and functions of original materials. Vanadium doping has some advantages such as the reduction of internal resistance, the improvement of chemical stability and high absorption. Especially, reduced internal resistance is so helpful for better electron transfer in TiO2 network. Various amounts of vanadium were applied and photovoltaic performance, internal impedance and absorbance were measured in order to verify the effect of vanadium doping. As a result, vanadium doping improved the overall performance from 6.01 to 6.81&#37; with decreased internal resistance although adsorbed dye amount was reduced by decreased surface area and open circuit voltage was also decreased by the change of band-gap energy. © 2013 The Japan Society of Applied Physics.

    DOI: 10.7567/JJAP.52.11NM02

  • Study on the Fabrication of Paint-Type Si Quantum Dot-Sensitized Solar Cells

    Hyunwoong Seo, Min-Kyu Son, Hee-Je Kim, Yuting Wang, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 10 )   2013.10

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    Quantum dots (QDs) have attracted much attention with their quantum characteristics in the research field of photochemical solar cells. Si QD was introduced as one of alternatives to conventional QD materials. However, their large particles could not penetrate inside TiO2 layer. Therefore, this work proposed the paint-type Si QD-sensitized solar cell. Its heat durability was suitable for the fabrication of paint-type solar cell. Si QDs were fabricated by multihollow discharge plasma chemical vapor deposition and characterized. The paste type, sintering temperature, and Si ratio were controlled and analyzed for better performance. Finally, its performance was enhanced by ZnS surface modification and the whole process was much simplified without sensitizing process. (C) 2013 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.52.10MB07

  • Extension of operation regimes and investigation of three-dimensional currentless plasmas in the Large Helical Device

    O. Kaneko, H. Yamada, S. Inagaki, M. Jakubowski, S. Kajita, S. Kitajima, Kobayashi, K. Koga, T. Morisaki, S. Morita, T. Mutoh, S. Sakakibara, Y. Suzuki, H. Takahashi, K. Tanaka, K. Toi, Y. Yoshimura, T. Akiyama, Y. Asahi, N. Ashikawa, H. Chikaraishi, A. Cooper, D. S. Darrow, E. Drapiko, P. Drewelow, X. Du, A. Ejiri, M. Emoto, T. Evans, N. Ezumi, K. Fujii, T. Fukuda, H. Funaba, M. Furukawa, D. A. Gates, M. Goto, T. Goto, W. Guttenfelder, S. Hamaguchi, M. Hasuo, T. Hino, Y. Hirooka, K. Ichiguchi, K. Ida, H. Idei, T. Ido, H. Igami, K. Ikeda, S. Imagawa, T. Imai, M. Isobe, M. Itagaki, T. Ito, K. Itoh, S. Itoh, A. Iwamoto, K. Kamiya, T. Kariya, H. Kasahara, N. Kasuya, D. Kato, T. Kato, K. Kawahata, F. Koike, S. Kubo, R. Kumazawa, D. Kuwahara, S. Lazerson, H. Lee, S. Masuzaki, S. Matsuoka, H. Matsuura, A. Matsuyama, C. Michael, D. Mikkelsen, O. Mitarai, T. Mito, J. Miyazawa, G. Motojima, K. Mukai, A. Murakami, I. Murakami, S. Murakami, T. Muroga, S. Muto, K. Nagaoka, K. Nagasaki, Y. Nagayama, N. Nakajima, H. Nakamura, Y. Nakamura, H. Nakanishi, H. Nakano, T. Nakano, K. Narihara, Y. Narushima, K. Nishimura, S. Nishimura, M. Nishiura, Y. M. Nunami, T. Obana, K. Ogawa, S. Ohdachi, N. Ohno, N. Ohyabu, T. Oishi, M. Okamoto, A. Okamoto, M. Osakabe, Y. Oya, T. Ozaki, N. Pablant, B. J. Peterson, A. Sagara, K. Saito, R. Sakamoto, H. Sakaue, M. Sasao, K. Sato, M. Sato, K. Sawada, R. Seki, T. Seki, V. Sergeev, S. Sharapov, I. Sharov, A. Shimizu, T. Shimozuma, M. Shiratani, M. Shoji, S. Sudo, H. Sugama, C. Suzuki, K. Takahata, Y. Takeiri, Y. Takemura, M. Takeuchi, H. Tamura, N. Tamura, H. Tanaka, T. Tanaka, M. Tingfeng, Y. Todo, M. Tokitani, K. Tokunaga, T. Tokuzawa, H. Tsuchiya, K. Tsumori, Y. Ueda, L. Vyacheslavov, K. Y. Watanabe, T. Watanabe, T. H. Watanabe, B. Wieland, I. Yamada, S. Yamada, S. Yamamoto, N. Yanagi, R. Yasuhara, M. Yokoyama, N. Yoshida, S. Yoshimura, T. Yoshinaga, M. Yoshinuma, A. Komori

    NUCLEAR FUSION   53 ( 10 )   2013.10

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    The progress of physical understanding as well as parameter improvement of net-current-free helical plasma is reported for the Large Helical Device since the last Fusion Energy Conference in Daejeon in 2010. The second low-energy neutral beam line was installed, and the central ion temperature has exceeded 7 keV, which was obtained by carbon pellet injection. Transport analysis of the high-T-i plasmas shows that the ion-thermal conductivity and viscosity decreased after the pellet injection although the improvement does not last long. The effort has been focused on the optimization of plasma edge conditions to extend the operation regime towards higher ion temperature and more stable high density and high beta. For this purpose a portion of the open helical divertors are being modified to the baffle-structured closed ones aimed at active control of the edge plasma. It is compared with the open case that the neutral pressure in the closed helical divertor increased by ten times as predicted by modelling. Studies of physics in a three-dimensional geometry are highlighted in the topics related to the response to a resonant magnetic perturbation at the plasma periphery such as edge-localized-mode mitigation and divertor detachment. Novel approaches of non-local and non-diffusive transport have also been advanced.

    DOI: 10.1088/0029-5515/53/10/104015

  • Characteristics of photocurrent generation in the near-ultraviolet region in Si quantum-dot sensitized solar cells

    Giichiro Uchida, Muneharu Sato, Hyunwoong Seo, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    THIN SOLID FILMS   544   93 - 98   2013.10

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    We have studied photocurrent generation in Si quantum-dot (QD) sensitized solar cells, where QD thin films composed of Si nanoparticles were deposited using the double multi-hollow discharge plasma chemical vapor deposition process in an SiH4/H-2 and CH4 or N-2 gas mixture. The short-circuit current density of the Si QD sensitized solar cells increases by a factor of 2.5 by using Si nanoparticles prepared by irradiation of CH4 or N-2 plasma onto the Si nanoparticle surface. We have measured incident photon-to-current conversion efficiency (IPCE) in the near-ultraviolet range using quartz-glass front panels of the QD sensitized solar cells. With decreasing the wavelength of irradiation light, IPCE gradually increases upon light irradiation in a wavelength range less than about 600 nm, and then steeply increases below 300 nm, corresponding to 2.2 times the optical band-gap energy of Si QD film. (C) 2013 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.tsf.2013.04.111

  • Crystallinity control of sputtered ZnO films by utilizing buffer layers fabricated via nitrogen mediated crystallization: Effects of nitrogen flow rate

    N. Itagaki, K. Oshikawa, K. Matsushima, I. Suhariadi, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani

    Proc. 13th International Conference on Plasma Surface Engineering   26   84 - 87   2013.9

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    Crystallinity control of sputtered ZnO films by utilizing buffer layers fabricated via nitrogen mediated crystallization: Effects of nitrogen flow rate
    High quality ZnO:Al (AZO) films have been obtained by utilizing buffer layers fabricated via nitrogen mediated crystallization (NMC), where sputtering method is employed for preparation of both buffer layers and AZO films. Introduction of small amount of N2 (N2/(Ar+N2) = 16&#37;) to the sputtering atmosphere of NMC-ZnO buffer layers drastically improves the crystallinity of buffer layers and thus AZO films. The most remarkable effect of the buffer layers is a significant reduction in the resistivity at high base pressure of background gases. The resistivity of conventional AZO films increases from 2.0 m??cm to 70.0 m??cm with increasing the base pressure from 3×10-5 Pa to 1×10-3 Pa, while the resistivity of AZO films with NMC buffer layers increases from 0.5 m??cm to 2.0 m??cm, where the thickness of AZO film is 88 nm. Furthermore, AZO films with a sheet resistance of 10 ?/? and an optical transmittance higher than 80&#37; in a wide wavelength range of 400?1100 nm have been obtained.

  • クラスタ抑制法を用いた高光安定アモルファスシリコンPIN太陽電池の作製

    古閑 一憲, 橋本 優史, 金 淵元, 都甲 将, 徐 鉉雄, 板垣 奈穗, 白谷 正治, 内田 儀一郎

    電気学会研究会資料. PST, プラズマ研究会   2013 ( 74 )   13 - 17   2013.9

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    Fabrication of highly stable a-Si:H PIN solar cells using cluster suppression method

  • Control of Deposition Profile and Properties of Plasma CVD Carbon Films

    K. Koga, T. Urakawa, G. Uchida, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani

    Proc. 13th International Conference on Plasma Surface Engineering   26   136 - 139   2013.9

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    Control of Deposition Profile and Properties of Plasma CVD Carbon Films
    We have succeeded to deposit anisotropic and top surface deposition profile on substrates with trenches using H-assisted plasma CVD of Ar + H2 + C7H8 at a low substrate temperature of 100 oC. For the anisotropic deposition profile, carbon is deposited without being deposited on sidewall of trenches. For the top surface deposition profile, carbon is deposited at only top surface. The optical emission measurements and evaluation of deposition rate have revealed that a high flux of H atmos is the key to the deposition profile control. The mass density of the films and their Raman spectrum have shown that their structure is a-C:H.

  • Effects of nanoparticle incorporation on properties of microcrystalline films deposited using multi-hollow discharge plasma CVD

    Yeonwon Kim, Takeaki Matsunaga, Kenta Nakahara, Hyunwoong Seo, Kunihiro Kamataki, Giichiro Uchida, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    SURFACE & COATINGS TECHNOLOGY   228   S550 - S553   2013.8

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    We investigated the effects of incorporation of crystalline nanoparticles on properties of microcrystalline Si films deposited using multi-hollow discharge plasma CVD. Both photo and dark conductivity of films with nanoparticles are lower than the films without nanoparticles. Films with nanoparticles have higher photosensitivity than those of films without nanoparticles in a low crystallinity region. Microcrystalline films of high crystallinity and high photosensitivity are obtained only in a range of small volume fraction of nanoparticles under low dilution ratio, R = ([SiH4] + [H-2])/[SiH4]. Incorporation of small amount of nanoparticles into films strongly affects photo and dark conductivity of films. (C) 2012 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.surfcoat.2012.04.029

  • Observation of nanoparticle growth process using a high speed camera Reviewed

    Y. Morita, S. Iwashita, D. Yamashita, G. Uchida, K. Kamataki, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    Proceedings of 21st International Symposium on Plasma Chemistry   264   2013.8

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    Observation of nanoparticle growth process using a high speed camera
    Time evolution of spatial profile of nanoparticle amount in low pressure reactive discharge plasmas have been measured to study effects of amplitude modulation of the plasmas on particle growth in the initial growth phase. Amplitude modulation of discharge voltage leads to oscillate nanoparticle amount and their spatial profile. Growth of nanoparticles is suppressed by increasing the AM frequency.

  • Mass density control of carbon films deposited by H-assisted plasma CVD method

    Tatsuya Urakawa, Hidehumi Matsuzaki, Daisuke Yamashita, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani, Yuichi Setsuhara, Makoto Sekine, Masaru Hori

    SURFACE & COATINGS TECHNOLOGY   228   S15 - S18   2013.8

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    In order to obtain high density carbon films with keeping anisotropic deposition profile on trench substrates, we control mass density of carbon films deposited by a H-assisted plasma chemical vapor deposition (CVD) method by ion kinetic energy of ions irradiating on film surface during deposition. The highest mass density of 2.14 g/cm(3) is obtained for deposition under the ion energy of 75 eV and it is 1.4 times as high as that for the ion energy of 32 eV. We also have studied etching rate of these films using H-2 + N-2 discharge plasmas. The lowest etch rate of 1.8 nm/min is obtained for the ion energy of 75 eV and it is 2.8 times as low as that for the ion energy of 32 eV. Etching rate of carbon films decreases exponentially with increasing the mass density of carbon films. Control of ion energy is the key to obtain high mass density carbon films with keeping anisotropic deposition profile on trench substrates. (C) 2012 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.surfcoat.2012.10.002

  • Effects of DC substrate bias voltage on dust flux in the Large Helical Device

    Kazunori Koga, Katsushi Nishiyama, Yasuhiko Morita, Giichiro Uchida, Daisuke Yamashita, Kunihiro Kamataki, Hyunwoong Seo, Naho Itagaki, Masaharu Shiratani, Naoko Ashikawa, Suguru Masuzaki, Kiyohiko Nishimura, Akio Sagara

    JOURNAL OF NUCLEAR MATERIALS   438   S727 - S730   2013.7

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    We measured the dependence of the collected flux of dust particles on the bias potential Delta phi with respect to ground in the Large Helical Device at the National Institute of Fusion Science. This is a first step toward developing a novel method for removing dust for fusion reactors based on applying a local bias potential. The collected dust particles were classified into two kinds: spherical carbon particles smaller than 300 nm and stainless-steel flakes smaller than 1 mu m. For Delta phi = -70 to +70 V, the flux of spherical particles increased exponentially with increasing Delta phi. The flux of flakes increased when Delta phi was increased from -70 V to +30 V and it decreased at higher Delta phi. These results suggest that this method is useful for removing carbon and metal dust particles from the shadow area of fusion devices using appropriate control of the local bias potential. (C) 2013 Elsevier B. V. All rights reserved.

    DOI: 10.1016/j.jnucmat.2013.01.154

  • Discharge power dependence of carbon dust flux in a divertor simulator

    Katsushi Nishiyama, Yasuhiko Morita, Giichiro Uchida, Daisuke Yamashita, Kunihiro Kamataki, Hyunwoong Seo, Naho Itagaki, Kazunori Koga, Masaharu Shiratani, Naoko Ashikawa, Suguru Masuzaki, Kiyohiko Nishimura, Akio Sagara, Sven Bornholdt, Holger Kersten

    JOURNAL OF NUCLEAR MATERIALS   438   S788 - S791   2013.7

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    In fusion devices, dust particles are generated due to plasma-wall interactions and may cause safety or operational problems. Therefore it is necessary to clarify the generation and transport mechanisms of dust particles. Here we have measured energy influx from H-2 plasmas toward a graphite target using a calorimetric probe and compared the results with the dust flux toward a dust collecting substrate set on the reactor wall. The dust flux decreases with increasing the energy influx. For the higher discharge power, the more number of dust particles tend to redeposit onto the graphite target due to the higher ion drag force and hence the dust flux toward the reactor wall becomes smaller. The results show that dust inventory depends strongly on energy influx to graphite divertor plates in fusion devices. (C) 2013 Elsevier B. V. All rights reserved.

    DOI: 10.1016/j.jnucmat.2013.01.169

  • Transport control of dust particles via the electrical asymmetry effect: experiment, simulation and modelling

    Shinya Iwashita, Edmund Schuengel, Julian Schulze, Peter Hartmann, Zoltan Donko, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani, Uwe Czarnetzki

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   46 ( 24 )   2013.6

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    The control of the spatial distribution of micrometre-sized dust particles in capacitively coupled radio frequency discharges is relevant for research and applications. Typically, dust particles in plasmas form a layer located at the sheath edge adjacent to the bottom electrode. Here, a method of manipulating this distribution by the application of a specific excitation waveform, i.e. two consecutive harmonics, is discussed. Tuning the phase angle theta between the two harmonics allows one to adjust the discharge symmetry via the electrical asymmetry effect (EAE). An adiabatic (continuous) phase shift leaves the dust particles at an equilibrium position close to the lower sheath edge. Their levitation can be correlated with the electric field profile. By applying an abrupt phase shift the dust particles are transported between both sheaths through the plasma bulk and partially reside at an equilibrium position close to the upper sheath edge. Hence, the potential profile in the bulk region is probed by the dust particles providing indirect information on plasma properties. The respective motion is understood by an analytical model, showing both the limitations and possible ways of optimizing this sheath-to-sheath transport. A classification of the transport depending on the change in the dc self-bias is provided, and the pressure dependence is discussed.

    DOI: 10.1088/0022-3727/46/24/245202

  • Analysis on the effect of polysulfide electrolyte composition for higher performance of Si quantum dot-sensitized solar cells

    Hyunwoong Seo, Yuting Wang, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    ELECTROCHIMICA ACTA   95   43 - 47   2013.4

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    Quantum dot-sensitized solar cell (QDSC) based on multiple exciton generation of QD has been expected to realize high efficiency. This work focused on Si QD instead of conventional QD materials because of their toxicity and scarcity. Si QDs were fabricated by multi-hollow discharge plasma chemical vapor deposition. General QDSCs use polysulfide electrolyte because it is suitable for stabilizing QDs and its redox reaction is the best as compared with other redox systems. The improvement of redox reaction which is one of the slowest reactions in the kinetic analysis is closely connected with the enhancement of performance. For the enhancement on the overall performance of Si QDSC, the performance dependence on electrolyte composition was investigated. The concentrations of Na2S and S were varied for the activation of redox reaction and KCl concentration was optimized for the improvement of electrolyte characteristics. Consequently, the best performance of Si QDSC was obtained with 1 M Na2S, 2 M S, and 0.4M KCl polysulfide electrolyte. (c) 2013 Elsevier Ltd. All rights reserved.

    DOI: 10.1016/j.electacta.2013.02.026

  • ナノ材料のプラズマプロセシングの研究の現状と将来 Invited Reviewed

    白谷 正治, 古閑 一憲, 内田 儀一郎, Hyunwoong SEO, 板垣 奈穂, 岩下 伸也

    表面科学   34 ( 10 )   520 - 527   2013.1

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    ナノ材料のプラズマプロセシングの研究の現状と将来
    This paper reviews production of nanoparticles using low pressure reactive plasmas and its application to quantum dot sensitized solar cells. For the method, nanoparticles of several nm in size with a small size dispersion are produced in gas phase using reactive plasmas, and then the nanoparticles and radicals are co-deposited on a substrate. This method realizes one-step deposition of nanoparticle composite films in a controllable way.

    DOI: 10.1380/jsssj.34.520

  • H-2/N-2 Plasma Etching Rate of Carbon Films Deposited by H-Assisted Plasma Chemical Vapor Deposition

    Tatsuya Urakawa, Ryuhei Torigoe, Hidefumi Matsuzaki, Daisuke Yamashita, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani, Yuichi Setsuhara, Keigo Takeda, Makoto Sekine, Masaru Hori

    JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 1 )   2013.1

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    Etching resistance of carbon films deposited by plasma chemical vapor deposition (CVD) is one of the concerns to fabricate nanostructures using such carbon films as protective coating films and dummy films. We have carried out H-2/N-2 plasma etching of carbon films deposited by using an H-assisted plasma CVD method. The etching rate of carbon films decreases exponentially with increasing the mass density of carbon films from 1.51 to 2.27 g/cm(3). The mass density of carbon films is the key parameter to tune the etching resistance. (C) 2013 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.52.01AB01

  • Dust particle formation due to interaction between graphite and helicon deuterium plasmas

    Shinya Iwashita, Katsushi Nishiyama, Giichiro Uchida, Hyunwoong Seo, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    FUSION ENGINEERING AND DESIGN   88 ( 1 )   28 - 32   2013.1

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    The collection of dust particles using divertor simulation helicon plasmas has been carried out to examine dust formation due to the interaction between a graphite target and deuterium plasmas, which are planned to operate in the large helical device (LHD) at the Japanese National Institute for Fusion Science (NIFS). The collected dust particles are classified into three types: (i) small spherical particles below 400 nm in size, (ii) agglomerates whose primary particles have a size of about 10 nm, and (iii) large flakes above 1 mu m in size. These features are quite similar to those obtained through hydrogen plasma operation, indicating that the dust formation mechanisms due to the interaction between a carbon wall and a plasma of deuterium, which is the isotope of hydrogen, is probably similar to those of hydrogen. (c) 2012 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.fusengdes.2012.10.002

  • Effects of Hydrogen Dilution on ZnO Thin Films Fabricated via Nitrogen-Mediated Crystallization

    Iping Suhariadi, Koichi Matsushima, Kazunori Kuwahara, Koichi Oshikawa, Daisuke Yamashita, Hyunwoong Seo, Giichiro Uchida, Kunihiro Kamataki, Kazunori Koga, Masaharu Shiratani, Sven Bornholdt, Holger Kersten, Harm Wulff, Naho Itagaki

    JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 1 )   2013.1

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    Hydrogenated ZnO thin films have been successfully deposited on glass substrates via a nitrogen mediated crystallization (NMC) method utilizing RF sputtering. Here we aim to study the crystallinity and electrical properties of hydrogenated NMC-ZnO films in correlation with substrate temperature and H-2 flow rate. XRD measurements reveal that all the deposited films exhibit strongly preferred (001) orientation. The integral breadth of the (002) peak from the hydrogenated NMC-ZnO films is smaller than that of the conventional hydrogenated ZnO films fabricated without nitrogen. Furthermore, the crystallinity and surface morphology of the hydrogenated NMC-ZnO films are improved by increasing substrate temperature to 400 degrees C, where the smallest integral breadth of (002) 2 theta-omega scans of 0.83 degrees has been obtained. By utilizing the hydrogenated NMC-ZnO films as buffer layers, the crystallinity of ZnO:Al (AZO) films is also improved. The resistivity of AZO films on NMC-ZnO buffer layers decreases with increasing H-2 flow rate during the sputter deposition of buffer layers from 0 to 5 sccm. At a H-2 flow rate of 5 sccm, 20-nm-thick AZO films with low resistivity of 1.5 x 10(-3) Omega cm have been obtained. (C) 2013 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.52.01AC08

  • High Amount Cluster Incorporation in Initial Si Film Deposition by SiH4 Plasma Chemical Vapor Deposition

    Yeonwon Kim, Kosuke Hatozaki, Yuji Hashimoto, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani

    JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 1 )   2013.1

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    We have carried out in-situ measurements of Si cluster volume fraction in Si films during plasma chemical vapor deposition by using quartz crystal microbalances (QCM's) together with a cluster-eliminating filter. The cluster volume fraction in films is deduced from film deposition rates with and without Si clusters using QCM's. By employing this method we have revealed a depth profile of the Si cluster volume fraction. A high cluster volume fraction is observed in the initial phase of film deposition. This behavior is compared with time evolution of SiH center dot, Si-center dot emission intensities and their intensity ratio. (C) 2013 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.52.01AD01

  • Improvement of Si Adhesion and Reduction of Electron Recombination for Si Quantum Dot-Sensitized Solar Cells

    Hyunwoong Seo, Yuting Wang, Muneharu Sato, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 1 )   2013.1

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    Quantum dots (QDs) based on multiple exciton generation have attracted much attention. They are capable of generating multiple electrons by single-photon absorption. Si is one of the good QD sources and its nontoxicity and abundance are advantageous for photovoltaics. In this work, Si QDs were fabricated by multihollow discharge plasma chemical vapor deposition, and they were applied to Si QD-sensitized solar cells. Their initial performance was poor because of the weak adhesion of Si and charge recombination. In this work, we solved these problems through the functionalization of Si QDs and a ZnO barrier. Functionalized Si QDs were more adsorbed on TiO2 with strengthened adhesion and the ZnO barrier prevented the contact between TiO2 and the redox electrolyte. Consequently, the improved adhesion and the reduced electron recombination led to the enhancement of overall photovoltaic characteristics. (C) 2013 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.52.01AD05

  • The reduction of charge recombination and performance enhancement by the surface modification of Si quantum dot-sensitized solar cell

    Hyunwoong Seo, Yuting Wang, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    ELECTROCHIMICA ACTA   87   213 - 217   2013.1

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    Multiple exciton generation solar cell based on quantum dots has higher theoretical efficiency than single exciton generation solar cell. In this work, Si quantum dots with the diameter of 10 nm were fabricated by the multi-hollow discharge plasma chemical vapor deposition and applied to the quantum dot-sensitized solar cell. In this cell, there was considerable electron recombination with redox electrolyte in the Si-TiO2 network because of large Si particle size. For the reduction of recombination and the enhancement of performance, a barrier layer was introduced. Zinc nitrate hexahydrate (Zn(NO3)(2)center dot 6H(2)O) and zinc acetate dihydrate (Zn(CH3COO)(2)center dot H2O) were employed as precursors for surface modification. Consequently,short circuit current and open circuit voltage of the cells were increased by the surface modification with both precursors. The improvement was ascribed to the inhibition of electrons back transfer from TiO2 to the electrolyte by the barrier layer. This result clearly demonstrated that the surface modification with ZnO was advantageous for the performance enhancement. (C) 2012 Elsevier Ltd. All rights reserved.

    DOI: 10.1016/j.electacta.2012.09.087

  • Sputter deposition of Epitaxial Zinc-Indium Oxynitride Films for Excitonic Transistors Reviewed

    N. Itagaki, K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani

    Proc. International Symposium on Dry Process   34   97 - 98   2012.11

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    Sputter deposition of Epitaxial Zinc-Indium Oxynitride Films for Excitonic Transistors

  • Growth Control of Dry Yeast Using Scalable Atmospheric-Pressure Dielectric Barrier Discharge Plasma Irradiation

    Satoshi Kitazaki, Kazunori Koga, Masaharu Shiratani, Nobuya Hayashi

    JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 11 )   2012.11

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    We have investigated the effects of plasma irradiation on the growth of dry yeast (Saccharomyces cerevisiae) using a scalable atmospheric-pressure dielectric barrier discharge (DBD) device. NO of 380 ppm, NO2 of 10 ppm and O-3 of 560 ppm were detected 1 mm below the discharges, which were produced by the DBD plasmas. DBD plasma irradiation of 10 to 100 s enhances the growth of yeast in the lag phase, whereas that of 120 and 150 s suppresses the growth. O-3, NO2, photons, and heat generated by the plasma irradiation are not responsible for the growth enhancement of the dry yeast. Plasma etching has little effect on the growth of dry yeast cells. NO plays a key role in the growth enhancement of dry yeast cells. (C) 2012 The Japan Society of Applied Physics

    DOI: 10.1143/JJAP.51.11PJ02

  • Control of radial density profile of nano-particles produced in reactive plasma by amplitude modulation of radio frequency discharge voltage

    Kunihiro Kamataki, Kazunori Koga, Giichiro Uchida, Naho Itagaki, Daisuke Yamashita, Hidefumi Matsuzaki, Masaharu Shiratani

    THIN SOLID FILMS   523   76 - 79   2012.11

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    We investigate uniformity of radial density profile of nano-particles in capacitively-coupled radio frequency discharge with an amplitude modulation (AM) of rf discharge voltage, by a two-dimensional laser light scattering method. Their densities at the center and that at the edge of the electrode increase by 3 and 24 times when the amplitude modulation level increases from 0 (without AM) to 30&#37;. The uniformity of radial density profile of nano-particles is significantly improved by using the AM method. (C) 2012 Elsevier B. V. All rights reserved.

    DOI: 10.1016/j.tsf.2012.07.059

  • Effects of crystalline nanoparticle incorporation on growth, structure, and properties of microcrystalline silicon films deposited by plasma chemical vapor deposition

    Yeonwon Kim, Takeaki Matsunaga, Kenta Nakahara, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani

    THIN SOLID FILMS   523   29 - 33   2012.11

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    We investigated effects of incorporation of Si crystalline nanoparticles into microcrystalline Si films during their deposition on their growth, structure and properties using multi-hollow discharge plasma chemical vapor deposition. The films with nanoparticles show a lower (220) orientation ratio than those without nanoparticles, whereas both the films have nearly the same film thickness and crystallinity. The films with nanoparticles have inverted conical growth, while the films without nanoparticles have columnar growth. Nucleation density of the films with nanoparticles is higher than that of the films without nanoparticles. Both photo and dark conductivities of the films with nanoparticles tend to be lower than those without nanoparticles. Thus, incorporation of small amount of nanoparticles into microcrystalline Si film affects growth, structure and properties of the films. (C) 2012 Elsevier B. V. All rights reserved.

    DOI: 10.1016/j.tsf.2012.06.023

  • High quality epitaxial ZnO films grown on solid-phase crystallized buffer layers

    Kazunari Kuwahara, Naho Itagaki, Kenta Nakahara, Daisuke Yamashita, Giichiro Uchida, Kunihiro Kamataki, Kazunori Koga, Masaharu Shiratani

    THIN SOLID FILMS   520 ( 14 )   4674 - 4677   2012.5

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    High quality epitaxial ZnO films on sapphire (110) plane have been fabricated on ZnO homo-buffer layers crystallized via solid-phase epitaxially (SPE). The SPE-ZnO films are fabricated by annealing of amorphous ZnON (a-ZnON) films deposited by RF magnetron sputtering. During annealing, the a-ZnON films are oxidized and converted to ZnO crystal. X-ray diffraction (XRD) analysis shows that the resultant films are epitaxially grown on the sapphire substrates. By using the SPE-ZnO films as homo-buffer layers, the ZnO films with high crystallinity, which are deposited by RF magnetron sputtering, are fabricated. The full width at half-maximum of XRD patterns for 20-omega and omega scan of (002) plane are 0.094 degrees and 0.12 degrees, respectively, being significantly small compared with 0.24 degrees and 0.55 degrees for the films without buffer layers. Thus utilizing SPE buffer layers is very promising to obtain epitaxial ZnO films with high crystallinity. (C) 2011 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.tsf.2011.10.136

  • In situ analysis of size distribution of nano-particles in reactive plasmas using two dimensional laser light scattering method

    K. Kamataki, Y. Morita, M. Shiratani, K. Koga, G. Uchida, N. Itagaki

    JOURNAL OF INSTRUMENTATION   7   2012.4

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    We have developed a simple in-situ method for measuring the size distribution (the mean size (mean diameter) and size dispersion) of nano-particles generated in reactive plasmas using the 2 dimensional laser light scattering (2DLLS) method. The principle of the method is based on thermal coagulation of the nano-particles, which occurs after the discharge is turned off, and the size and density of the nano-particles can then be deduced. We first determined the 2D spatial distribution of the density and size of the nano-particles in smaller particle size (a few nm) range than ones deduced from the conventional 2DLLS method. From this 2D dataset, we have for the first time been able to determine the size distribution of nano-particles generated in a reactive plasma without ex-situ measurements.

    DOI: 10.1088/1748-0221/7/04/C04017

  • ZnO:Al Thin Films with Buffer Layers Fabricated via Nitrogen Mediated Crystallization: Effects of N2/Ar Gas Flow Rate Ratio Reviewed

    I. Suhariadi, N. Itagaki, K. Kuwahara, K. Oshikawa, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, K. Nakahara, M. Shiratani

    Trans. Mater. Res. Soc. Jpn.   37 ( 2 )   165 - 168   2012.1

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    ZnO:Al Thin Films with Buffer Layers Fabricated via Nitrogen Mediated Crystallization: Effects of N2/Ar Gas Flow Rate Ratio
    Effects of N2/Ar gas flow rate ratio on the crystallinity of sputtered ZnO films fabricated via nitrogen mediated crystallization (NMC) have been clarified. Introduction of small amount of N2 (N2/Ar = 4/20.5 sccm) drastically improves the crystal orientation and enlarges grain size of the NMC-ZnO films, where FWHM of XRD patterns for 2θ-ω and ω scan of (002) plane are 0.17° and 2.6°, respectively. A further increase in N2/Ar flow rate ratio deteriorates the crystallinity, since excess N atoms in the films disarrange the crystal structure of ZnO. Furthermore, ZnO:Al (AZO) films with high crystallinity have been successfully fabricated by utilizing the NMC-ZnO films deposited at N2/Ar = 4/20.5 sccm as buffer layers. 100-nm-thick AZO films with a resistivity of 6.8×10-4 Ωcm and an optical transmittance higher than 80&#37; in a wide wavelength range of 500 nm to 1500 nm has been obtained.

    DOI: 10.14723/tmrsj.37.165

  • Pulmonary Toxicity of Indium Tin Oxide and Copper Indium Gallium Diselenide

    Akiyo Tanaka, Miyuki Hirata, Kazunori Koga, Makiko Nakano, Kazuyuki Omae, Yutaka Kiyohara

    MRS Proceedings   1469   2012.1

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    <title>ABSTRACT</title>The aim of this review is to introduce the adverse health effects of indium compounds. This review consists of 2 parts: (1) a study of the toxic effects in indium compounds in humans, and (2) a study of the toxic effects of indium tin oxide (ITO) and copper indium gallium diselenide (CIGS) in animals.

    To date, 4 epidemiological surveys have been conducted of indium-handling workers in Japan, and all who were studied showed that exposure to indium compounds caused pulmonary interstitial and emphysematous changes. There were clear dose-response and dose-effect relationships between the serum indium levels and the levels of Krebs von den Lungen-6 (KL-6), which is a serological indicator of interstitial pneumonia up until 2011, 8 cases of interstitial pneumonia in Japanese indium-exposed workers, 2 cases of pulmonary alveolar proteinosis (PAP) in US indium-exposed workers, and 1 case of PAP in a Chinese indium-exposed worker have been reported.

    In animals studies, it has been clearly demonstrated that ITO and CIGS particles cause pulmonary toxicity and that the dissolution of ITO and CIGS particles in the lungs is considerably slow when repeated intratracheal instillations were given to experimental animals.

    Thus, more studies are needed on the effects of human exposure to indium compounds.

    DOI: 10.1557/opl.2012.1074

  • Growth Enhancement of Radish Sprouts Induced by Low Pressure O-2 Radio Frequency Discharge Plasma Irradiation

    Satoshi Kitazaki, Kazunori Koga, Masaharu Shiratani, Nobuya Hayashi

    JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 1 )   2012.1

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    We studied growth enhancement of radish sprouts (Raphanus sativus L.) induced by low pressure O-2 radio frequency (RF) discharge plasma irradiation. The average length of radish sprouts cultivated for 7 days after O-2 plasma irradiation is 30-60&#37; greater than that without irradiation. O-2 plasma irradiation does not affect seed germination. The experimental results reveal that oxygen related radicals strongly enhance growth, whereas ions and photons do not. (C) 2012 The Japan Society of Applied Physics

    DOI: 10.1143/JJAP.51.01AE01

  • Combinatorial Deposition of Microcrystalline Silicon Films Using Multihollow Discharge Plasma Chemical Vapor Deposition

    Kazunori Koga, Takeaki Matsunaga, Yeonwon Kim, Kenta Nakahara, Daisuke Yamashita, Hidefumi Matsuzaki, Kunihiro Kamataki, Giichiro Uchida, Naho Itagaki, Masaharu Shiratani

    JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 1 )   2012.1

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    A high-pressure depletion method using plasma chemical vapor deposition (CVD) is often used to deposit hydrogenated microcrystalline silicon (pc-Si:H) films of a low defect density at a high deposition rate. To understand proper deposition conditions of pc-Si:H films for a high-pressure depletion method, Si films were deposited in a combinatorial way using a multihollow discharge plasma CVD method by which fluxes of H and SiH3 radicals and their flux ratio can be varied with the distance from the discharges. The higher gas pressure brings about the higher deposition rate, whereas the process window of device quality mu c-Si:H films becomes quite narrower for the higher gas pressure. (C) 2012 The Japan Society of Applied Physics

    DOI: 10.1143/JJAP.51.01AD02

  • Deposition of Cluster-Free B-doped Hydrogenated Amorphous Silicon Films Using SiH4+B10H14 Multi-Hollow Discharge Plasma Chemical Vapor Deposition

    Kazunori Koga, Kenta Nakahara, Yeon-Won Kim, Takeaki Matsunaga, Daisuke Yamashita, Hidefumi Matsuzaki, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Masaharu Shiratani

    JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 1 )   2012.1

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    We have deposited cluster-free B-doped hydrogenated amorphous silicon (a-Si:H) films using a SiH4+B10H14 multi-hollow discharge plasma chemical vapor deposition (CVD) method. We have studied the dependence of the deposition rate, band gap, and conductivity of the films on the gas flow rate ratio R = [B10H14]/[SiH4]. The deposition rate for SiH4+B10H14 plasmas is 2-3 times as high as that for pure SiH4 plasmas. Optical emission spectroscopy (OES) measurements indicate that SiH3 radical generation rate remains nearly constant regardless of R. These results suggest that BxHy radicals enhance the surface reaction probability and/or sticking probability of SiH3, being the predominant deposition precursor. Cluster-free B-doped a-Si:H films have a wide band-gap energy of 1.8-2.0 eV and a conductivity as high as 5.0 x 10(-6) S/cm. These results demonstrate that cluster-free B-doped a-Si:H films deposited using SiH4+B10H14 multi-hollow discharge plasma CVD are promising as a p-layer of pin a-Si:H solar cells. (C) 2012 The Japan Society of Applied Physics

    DOI: 10.1143/JJAP.51.01AD03

  • Effect of Nitridation of Si Nanoparticles on the Performance of Quantum-Dot Sensitized Solar Cells

    Giichiro Uchida, Kosuke Yamamoto, Muneharu Sato, Yuki Kawashima, Kenta Nakahara, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 1 )   2012.1

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    We developed Si quantum-dot (QD) sensitized solar cells using nitridated Si nanoparticle films. The Si/N content ratio of the Si nanoparticle films was combinatorially controlled in double multi-hollow discharge plasma chemical vapor deposition (CVD) process in a SiH4/H-2 and N-2 gas mixture. The short-circuit current density of Si OD sensitized solar cells increases by a factor of 1.3 with the nitridation of Si nanoparticles, and a high photon-to-current conversion efficiency of 40&#37; was achieved at a short wavelength of 350 nm. (C) 2012 The Japan Society of Applied Physics

    DOI: 10.1143/JJAP.51.01AD01

  • Impacts of Amplitude Modulation of RF Discharge Voltage on the Growth of Nanoparticles in Reactive Plasmas

    Kunihiro Kamataki, Hiroshi Miyata, Kazunori Koga, Giichiro Uchida, Naho Itagaki, Masaharu Shiratani

    APPLIED PHYSICS EXPRESS   4 ( 10 )   2011.10

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    We have investigated the effects of plasma fluctuation on the growth of nanoparticles in capacitively-coupled rf discharges with amplitude modulation (AM). Nanoparticles grow more slowly for higher AM levels, which causes the density of nanoparticles to increase by 100&#37; and their size to decrease by 23&#37;. The increase in the number of radicals for nucleation and nanoparticles by AM is thought to cause a decrease in the radical flux for a nanoparticle because the rate of increase in the number of radicals is smaller than that of nanoparticles. Therefore, this causes the generation of a large amount of nanoparticles with small sizes. (C) 2011 The Japan Society of Applied Physics

    DOI: 10.1143/APEX.4.105001

  • Comparison between silicon thin films with and without incorporating crystalline silicon nanoparticles into the film

    Kazunori Koga, Takeaki Matsunaga, William Makoto Nakamura, Kenta Nakahara, Yuuki Kawashima, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Masaharu Shiratani

    THIN SOLID FILMS   519 ( 20 )   6896 - 6898   2011.8

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    We have deposited Si thin films using a multi-hollow discharge plasma CVD method to compare properties of the films with and without incorporating crystalline Si nanoparticles into the films. After the deposition of the films, we have evaluated crystallization of the films by irradiating laser. We have found that a laser power at which crystalline Si nanoparticles embedded a-Si:H films start to be crystallized is lower than that for a-Si:H films without the nanoparticles. The incorporation of the nanoparticles has no effect on the defect density of the films. These results suggest incorporation of crystalline Si nanoparticles into the films play a role of crystallization of Si films during the deposition. (C) 2011 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.tsf.2011.01.408

  • Redox Characteristics of Thiol Compounds Using Radicals Produced by Water Vapor Radio Frequency Discharge

    Nobuya Hayashi, Akari Nakahigashi, Masaaki Goto, Satoshi Kitazaki, Kazunori Koga, Masaharu Shiratani

    JAPANESE JOURNAL OF APPLIED PHYSICS   50 ( 8 )   2011.8

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    The redox reaction between cystein and cystine is observed using radicals produced in water vapor plasma for the control of plant growth. Cystein is oxidized to cystine using the OH radical in the higher-pressure regime and cystine is reduced to cystein by the H radical generated in the lower-pressure regime. Also, the oxidative stress reaction of plants is observed when water vapor plasma is irradiated onto seeds of plants such as radish sprouts. The mechanism of the control of plant growth is explained by the change in thiol compound quantity of the plant cells induced by the radical reaction. (C) 2011 The Japan Society of Applied Physics

    DOI: 10.1143/JJAP.50.08JF04

  • Nano-factories in plasma: present status and outlook

    Masaharu Shiratani, Kazunori Koga, Shinya Iwashita, Giichiro Uchida, Naho Itagaki, Kunihiro Kamataki

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   44 ( 17 )   2011.5

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    We propose the concept of 'nano-factory in plasma' which is a miniature version of a macroscopic conventional factory. A nano-factory in plasma produces nanoblocks and radicals (adhesives) in reactive plasmas, transports nanoblocks towards a substrate and arranges them on the substrate. We describe several key control methods for a nano-factory in plasma: size and structure control of nanoparticles, control of their agglomeration, transport and sticking, and then explain the combination of several types of control. Finally we point out remaining important issues in nano-factories in plasma.

    DOI: 10.1088/0022-3727/44/17/174038

  • Zno films with buffer layers crystallized via nitrogen mediation: Effects of deposition temperature of buffer layers

    K. Kuwahara, N. Itagaki, K. Nakahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani

    Proc. PVSEC-21   4D-2P-11   2011.1

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    Zno films with buffer layers crystallized via nitrogen mediation: Effects of deposition temperature of buffer layers

  • Highly Conducting and Very Thin ZnO:Al Films with ZnO Buffer Layer Fabricated by Solid Phase Crystallization from Amorphous Phase

    Naho Itagaki, Kazunari Kuwahara, Kenta Nakahara, Daisuke Yamashita, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani

    APPLIED PHYSICS EXPRESS   4 ( 1 )   2011.1

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    We propose a novel method of oxide crystal growth via atomic-additive mediated amorphization. By utilizing this method, solid-phase crystallization (SPC) of ZnO from amorphous phase has been successfully demonstrated via nitrogen atom mediation. The resultant SPC-ZnO films are highly orientated and the crystallinity is higher than that of the films prepared by conventional sputtering. By using the SPC-ZnO as a buffer layer, the resistivity of ZnO:Al (AZO) films is drastically decreased. 20-nm-thick AZO films with a resistivity of 5 x 10(-4) Omega cm and an optical transmittance higher than 80&#37; in a wide wavelength range of 400-2500 nm have been obtained. (C) 2011 The Japan Society of Applied Physics

    DOI: 10.1143/APEX.4.011101

  • Combinatorial study of substrate temperature dependence on properties of silicon films deposited using multihollow discharge plasma CVD Reviewed

    Y. Kim, T. Matsunaga, Y. Kawashima, D. Yamashita, K. Kamataki, N. Itagaki, G. Uchida, K. Koga, M. Shiratani

    Proc. of The 20th International Symposium on Plasma Chemistry (ISPC20)   POL08   2011.1

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    Combinatorial study of substrate temperature dependence on properties of silicon films deposited using multihollow discharge plasma CVD
    A combinatorial technique using a multi-hollow discharge plasma CVD method has been employed to investigate effects of substrate temperature on hydrogenated microcrystalline silicon (?c-Si:H) film growth. No film is deposited near the discharge region RT to 350°C, whereas the area of no film region decreases with increasing the substrate temperature. This is attributed to competitive reactions between Si etching by H atoms and Si deposition. The area of microcrystalline Si region increases with the substrate temperature due to high surface diffusion rate of Si containing radical. These results show that the process window of μc-Si:H films becomes wider for the higher substrate temperature due to two reasons: 1) the lower Si etching rate and 2) the longer surface migration length of Si containing radicals. The defect density decreases significantly with increasing Ts from 6.24 × 10 16 cm -3 for Ts =100 o C down to 6.26 × 10 15 cm -3 for T s =300 o C.

  • Impacts of Plasma Fluctuations on Growth of Nano-Particles in Reactive Plasma

    K. Kamataki, H. Miyata, K. Koga, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani

    Proc. of International Conference on Phenomena in Ionized Gases(ICPIG) 2011 Conference   D13-318   2011.1

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    Impacts of Plasma Fluctuations on Growth of Nano-Particles in Reactive Plasma

  • Collection of carbon dust particles formed due to plasma-wall interactions between high density H2 plasma and carbon wall onto substrates by applying local DC bias voltage

    K. Nishiyama, Y. Morita, D. Yamashita, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, the LHD Experimental Group, S. Bornholdt, H. Kersten

    Proc. Plasma Conf. 2011   24P094-O   2011.1

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    Collection of carbon dust particles formed due to plasma-wall interactions between high density H2 plasma and carbon wall onto substrates by applying local DC bias voltage
    We collected dust particles generated by interaction between a plasma and a carbon target in helicon discharge reactor, by which diverter plasmas in fusion devices are simulated. The dust particles are classified into three kinds: small spherical particles, agglomerates, and large flakes, suggesting three formation mechanisms: chemical vapor deposition (CVD) growth, agglomeration, and peeling from redeposited layer on the reactor wall. The area density and flux towards substrates of dust particles exponentially increase with the substrate bias voltage. The energy influx of plasmas towards the target and ion density were measured to clarify the dust formation mechanisms. They are nearly constant irrespective of the substrate bias voltage suggesting that the production rate of dust particles does not depend on the substrate bias voltage and their collection efficiency does.

  • Deposition of cluster-free a-Si:H films using cluster eliminating filter

    K. Nakahara, K. Hatozaki, Y. Hashimoto, T. Matsunaga, M. Sato, D. Yamashita, H. Matsuzaki, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    Proc. Plasma Conf. 2011   24P010-O   2011.1

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    Deposition of cluster-free a-Si:H films using cluster eliminating filter
    We have succeeded in deposition of highly stable a-Si:H films at a rate of 3 nm/s. To evaluate their performance as an I layer of PIN solar cells, Fill Factor (FF) of N-type c-Si/a-Si:H/Ni Schottky cells with cluster free a-Si:H films were measured. High quality stable a-Si:H films, were deposited with a multi-hollow discharge plasma CVD reactor together with a cluster-eliminating filter. Initial FF of the cell is 0.521, whereas stabilized FF is 0.495 that is 4.99&#37; lower than the initial FF. Our multi-hollow discharge plasma CVD method is useful to fabricate highly stable a-Si:H solar cells.

  • Effects of electrolyte on performance of quantum dot-sensitized solar cells using Si nanoparticles synthesized by multi-hollow discharge plasma CVD

    Y. Wang, M. Sato, H. Seo, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    Proc. Plasma Conf. 2011   23P013-O   2011.1

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    Effects of electrolyte on performance of quantum dot-sensitized solar cells using Si nanoparticles synthesized by multi-hollow discharge plasma CVD
    Effects of electrolyte on performance of Si QDSCs were investigated. We successfully fabricated an efficient polysulfide electrolyte based on the solvent mixed with water and methanol at a volume ratio of 3:7. The optimal electrolyte contains 1.0M Na2S, 0.5M S and 0.2M KCl. By introducing different ingredients with proper concentration, Jsc, Voc and fill factor are much improved. The efficiency of Si QDSCs using optimized electrolyte is 0.027&#37;

  • Effects of N2 gas addition to sputtering plasma on properties of epitaxial ZnO films

    K. Kuwahara, N. Itagaki, K. Nakahara, D. Yamashita, Seo H, G. Uchida, K. Kamataki, K. Koga, M. Shiratani

    Proc. Plasma Conf. 2011   24P008-O   2011.1

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    Effects of N2 gas addition to sputtering plasma on properties of epitaxial ZnO films
    Effects of N2/Ar flow rate ratio on properties of ZnO films fabricated via nitrogen mediated crystallization (NMC) have been studied. NMC-ZnO films are deposited by RF magnetron sputtering using Ar-N2 mixed gas. X-ray diffraction (XRD) analysis shows that the crystallinity of NMC-ZnO films is improved by addition of a small amount of N2 to sputtering atmosphere (N2/(Ar+N2) flow ratio of 8&#37;). By using the NMC-ZnO films as homo-buffer layers, ZnO films with high crystallinity are deposited by RF magnetron sputtering. The full width at half-maximum of XRD patterns for ω scan of (002) plane are 0.061°, being significantly small compared with 0.49° for the films without buffer layers. A further increase in N2/Ar flow rate ratio deteriorates the crystallinity because excess N atoms in the films disarrange the crystal structure of ZnO. The results indicate that utilizing NMC buffer layers deposited at an adequate N2 partial pressure is very promising to obtain epitaxial ZnO films with high crystallinity.

  • Effects of nanoparticle incorporation on Si thin films deposited by plasma CVD

    M. Shiratani, Y. Kim, T. Matsunaga, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga

    Proc. Plasma Conf. 2011   24G06   2011.1

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    Effects of nanoparticle incorporation on Si thin films deposited by plasma CVD
    We have investigated effects of nanoparticle inclusion on properties of a-Si:H films and mc-Si:H films using the multi-hollow discharge plasma CVD method. Minor deposition species (nanoparticles in this study) modify considerably properties of a-Si:H films and mc-Si:H films

  • Influence of nano-particles on multi-hollow discharge plasma for microcrystalline silicon thin films deposition

    T. Matsunaga, Y. Kim, K. Koga, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani

    Proc. Plasma Conf. 2011   24P015-O   2011.1

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    Influence of nano-particles on multi-hollow discharge plasma for microcrystalline silicon thin films deposition
    Effects of nano-particles on formation kinetics of microcrystalline silicon films were studied by X-ray diffraction spectroscopy (XRD) and optical emission spectroscopy (OES). Volume fraction of (220) orientation crystals of films without incorporating nano-particles is higher than that of those with nano-particles. The IH?/ISi* value in the region with nano-particles is slightly higher than that in the region without nano-particles. The ISi*/ISiH* value is almost the same as that in the region with and without nano-particles. These results suggest that (220) orientation crystal growth is suppressed by incorporation of nano-particles.

  • Low resistive ZnO:Al films with ZnO buffer layers fabricated by Ar/N2 magnetron sputtering

    N. Itagaki, K. Kuwahara, K. Nakahara, D. Yamashita, K. Kamataki, H. Seo, G. Uchida, K. Koga

    Proc. Plasma Conf. 2011   24G6   2011.1

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    Low resistive ZnO:Al films with ZnO buffer layers fabricated by Ar/N2 magnetron sputtering
    Low resistive ZnO:Al (AZO) films with uniform spatial distribution have been obtained by utilizing buffer layers fabricated by Ar/N2 magnetron sputtering. For 100 nm-thick AZO films, the averaged grain size of AZO films with buffer layers is 65 nm, which is 1.8 times larger than that of the films without buffer layers. This increase in the grain size of AZO films is due to the low grain density of buffer layers. As a result, the resistivity is drastically reduced. At the area facing the target erosion, the resistivity reduced from 2.27 m??cm for the films without buffer layers to 0.50 m??cm for our films, consequently, the spatial distribution of the resistivity is significantly improved. These results reveal that our method described here is full of promise for fabrication of ZnO-based TCO materials.

  • Radical Flux Evaluation to Microcrystalline Silicon Films Deposited by Multi-Hollow Discharge Plasma CVD

    Y. Kim, T. Matsunaga, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    Proc. Plasma Conf. 2011   24P011-O   2011.1

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    Radical Flux Evaluation to Microcrystalline Silicon Films Deposited by Multi-Hollow Discharge Plasma CVD
    To evaluate radical fluxes for microcrystalline silicon film deposition, Si films were deposited in a combinatorial way using a multi-hollow discharge plasma CVD method. Film crystallinity varied with the distance from the powered electrode. Based on the film deposition rate and Raman crystallinity, we proposed a method to estimate hydrogen flux. This evaluation of hydrogen flux is one of useful way to understand a process window of ?c-Si:H films.

  • Study of interaction between plasma fluctuation and nucleation of nanoparticle in plasma CVD

    K. Kamataki, K. Koga, G. Uchida, H. Seo, N. Itagaki, M. Shiratani

    Proc. Plasma Conf. 2011   24P014-O   2011.1

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    Study of interaction between plasma fluctuation and nucleation of nanoparticle in plasma CVD
    We have investigated effects of plasma fluctuation on the growth of nanoparticles in capacitively-coupled rf discharges with amplitude modulation. Nanoparticles grow more slowly for higher AM levels, that is they have 7 times higher density and 23&#37; smaller size. This AM method is useful for the production of a large amount of nanoparticles with a small size

  • Combinatorial study on effects of substatrate temperature of silicon film deposition using multi-hollow discharge plasma cvd

    Y. Kim, T. Matsunaga, D. Yamashita, K. Kamataki, N. Itagaki, G. Uchida, K. Koga, M. Shiratani

    Proc. PVSEC-21   3D-2P-09   2011.1

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    Combinatorial study on effects of substatrate temperature of silicon film deposition using multi-hollow discharge plasma cvd

  • Defect density of cluster-free a-si:h films deposited by multi-hollow discharge plasma CVD

    K. Nakahara, K. Hatozaki, M. Sato, T. Matsunaga, D. Yamashita, H. Matsuzaki, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    Proc. PVSEC-21   3D-2P-20   2011.1

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    Defect density of cluster-free a-si:h films deposited by multi-hollow discharge plasma CVD

  • Effects of nano-particles on (220) crystal orientation of microcrystallite silicon thin films

    T. Matsunaga, Y. Kim, K. Koga, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani

    Proc. PVSEC-21   4D-2P-16   2011.1

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    Effects of nano-particles on (220) crystal orientation of microcrystallite silicon thin films

  • Properties and performance of si quantum dot-sensitized solar cells with low temperature titania paste

    Y. Wang, M. Sato, T. Matsunaga, N. Itagaki, H. Seo, G. Uchida, K. Koga, M. Shiratani

    Proc. PVSEC-21   3D-5P-09   2011.1

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    Properties and performance of si quantum dot-sensitized solar cells with low temperature titania paste

  • Zinc oxide-based transparent conducting films with buffer layers fabricated via nitrogen-mediated crystallization

    N. Itagaki, K. Kuwahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani

    Proc. PVSEC-21   4D-2P-10   2011.1

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    Zinc oxide-based transparent conducting films with buffer layers fabricated via nitrogen-mediated crystallization

  • High rate deposition of highly stable a-Si:H films using multi-hollow discharges for thin films solar cells

    William Makoto Nakamura, Hidefumi Matsuzaki, Hiroshi Sato, Yuuki Kawashima, Kazunori Koga, Masaharu Shiratani

    SURFACE & COATINGS TECHNOLOGY   205   S241 - S245   2010.12

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    We developed a multi-hollow discharge plasma chemical vapor deposition (CVD) method to deposit a-Si:H films of high stability against light exposure for solar cell applications. This method suppresses incorporation of clusters, which are formed in discharges, into films; and such a-Si:H films without cluster incorporation show high stability against light exposure. Aiming at increasing the deposition rate, we have developed a honeycomb type electrode with more than double number of holes, and we have realized deposition of highly stable a-Si:H films of 4.7 x 10(15) cm(-3) in stabilized defect density at a rate of 3.0 nm/s and better film thickness uniformity within 5&#37; in an area of 4 cm in diameter. (C) 2010 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.surfcoat.2010.07.081

  • 低圧プラズマによる酸化還元反応および植物成長への影響

    林 信哉, 中東 朱里, 秋吉 雄介, 北崎 訓, 古閑 一憲, 白谷 正治

    電気学会研究会資料. PST, プラズマ研究会   2010 ( 65 )   33 - 36   2010.12

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    Redox reaction and plant growth stimulation using low pressure plasmas

  • High rate deposition of cluster-suppressed amorphous silicon films deposited using a multi-hollow discharge plasma CVD

    Kazunori Koga, Hiroshi Sato, Yuuki Kawashima, William M. Nakamura, Masaharu Shiratani

    Materials Research Society Symposium Proceedings   1210   217 - 222   2010.12

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    High rate deposition of cluster-suppressed amorphous silicon films deposited using a multi-hollow discharge plasma CVD
    We have examined effects of gas velocity and gas pressure on a deposition rate of hydrogenated amorphous silicon (a-Si:H) films and on a volume fraction of clusters in the films using a multi-hollow discharge plasma CVD method. The maximum deposition rate realized for each pressure exponentially increases with decreasing the pressure from 1.0 Torr to 0.1 Torr, whereas the volume fraction of clusters very slightly increases with increasing the deposition rate. Based on the results, we have succeeded in depositing highly stable a-Si:H films of 4.9 × 1015cm-3 in a stabilized defect density at a rate of 3.0nm/s using the method. © 2010 Materials Research Society.

  • Deposition of a-Si: H Films with High Stability against Light Exposure by Reducing Deposition of Nanoparticles Formed in SiH4 Discharges

    Kazunori Koga, Masaharu Shiratani, Yukio Watanabe

    Industrial Plasma Technology: Applications from Environmental to Energy Technologies   247 - 257   2010.10

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    DOI: 10.1002/9783527629749.ch20

  • Nanoblock Assembly Using Pulse RF Discharges with Amplitude Modulation

    Shinya Iwashita, Hiroshi Miyata, Kazunori Koga, Masaharu Shiratani

    Industrial Plasma Technology: Applications from Environmental to Energy Technologies   377 - 383   2010.10

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    DOI: 10.1002/9783527629749.ch31

  • Deposition profile control of carbon films on patterned substrates using a hydrogen-assisted plasma CVD method

    Takuya Nomura, Kazunori Koga, Kazunori Koga, Masaharu Shiratani, Masaharu Shiratani, Yuichi Setsuhara, Yuichi Setsuhara, Makoto Sekine, Makoto Sekine, Masaru Hori, Masaru Hori

    Materials Research Society Symposium Proceedings   1222   203 - 207   2010.8

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    Deposition profile control of carbon films on patterned substrates using a hydrogen-assisted plasma CVD method
    We have studied effects of H atom source on deposition profiles of carbon films, deposited by H assisted anisotropic plasma CVD method. Deposition rate normalized by that for the aspect ratio of 1 at sidewall and bottom decreases with increasing discharge power of H atom source from 0 W to 500 W, because the incident H atom flux per surface area in a trench increases and H atoms etch carbon films. © 2010 Materials Research Society.

  • Review of pulmonary toxicity of indium compounds to animals and humans

    Akiyo Tanaka, Miyuki Hirata, Yutaka Kiyohara, Makiko Nakano, Kazuyuki Omae, Masaharu Shiratani, Kazunori Koga

    THIN SOLID FILMS   518 ( 11 )   2934 - 2936   2010.3

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    Due to the increased production of ITO, the potential health hazards arising from occupational exposure to this material have attracted much attention. This review consists of three parts: 1) toxic effects of indium compounds on animals, 2) toxic effects of indium compounds on humans, and 3) recommendations for preventing exposure to indium compounds in the workplace.
    Available data have indicated that insoluble form of indium compounds, such as ITO, indium arsenide (InAs) and indium phosphide (InP), can be toxic to animals. Furthermore, InP has demonstrated clear evidence of carcinogenic potential in long-term inhalation studies using experimental animals. As for the dangers to humans, some data are available concerning adverse health effects to workers who have been exposed to indium-containing particles. The Japan Society for Occupational Health recommended the value of 3 mu g/L of indium in serum as the occupational exposure limit based on biological monitoring to preventing adverse health effects in workers resulting from occupational exposure to indium compounds. Accordingly, it is essential that much greater attention is focused on human exposure to indium compounds, and precautions against possible exposure to indium compounds are most important with regard to health management among indium-handling workers. (C) 2009 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.tsf.2009.10.123

  • Substrate Temperature Dependence of Sticking Probability of SiOx-CH3 Nano-Particles

    H. Miyata, K. Nishiyama, S. Iwashita, H. Matsuzaki, D. Yamashita, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    Proc. of International Symposium on Dry Process   43 - 44   2010.1

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    Substrate Temperature Dependence of Sticking Probability of SiOx-CH3 Nano-Particles

  • Carbon dust particles generated due to H2 plasma-carbon wall interaction Reviewed

    H. Miyata, K. Nishiyama, S. Iwashita, H. Matsuzaki, D. Yamashita, G. Uchida, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, LHD experimental group

    Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma   55 ( 7 )   CTP.00114   2010.1

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    Carbon dust particles generated due to H2 plasma-carbon wall interaction

  • Generation of nitridated silicon particles and their thin film deposition using double multi-hollow discharges Reviewed

    G. Uchida, M. Sato, Y. Kawashima, K. Nakahara, K. Yamamoto, T. Matsunaga, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma   55 ( 7 )   CTP.00093   2010.1

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    Generation of nitridated silicon particles and their thin film deposition using double multi-hollow discharges

  • Optical and Electrical Properties of Particle Composite Thin Films deposited in SiH4/H2 and N2 Multi-Hollow Discharges

    G. Uchida, M. Sato, Y. Kawashima, K. Yamamoto, K. Nakahara, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, M. Kondo

    Proc. of MNC2010   12D-11-66   2010.1

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    Optical and Electrical Properties of Particle Composite Thin Films deposited in SiH4/H2 and N2 Multi-Hollow Discharges

  • P-type sp(3)-bonded BN/n-type Si heterodiode solar cell fabricated by laser-plasma synchronous CVD method

    Shojiro Komatsu, Yuhei Sato, Daisuke Hirano, Takuya Nakamura, Kazunori Koga, Atsushi Yamamoto, Takahiro Nagata, Toyohiro Chikyo, Takayuki Watanabe, Takeo Takizawa, Katsumitsu Nakamura, Takuya Hashimoto, Masaharu Shiratani

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   42 ( 22 )   2009.11

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    A heterojunction of p-type sp(3)-bonded boron nitride (BN) and n-type Si fabricated by laser-plasma synchronous chemical vapour deposition (CVD) showed excellent rectifying properties and proved to work as a solar cell with photovoltaic conversion efficiency of 1.76&#37;. The BN film was deposited on an n-type Si (1 0 0) substrate by plasma CVD from B2H6 + NH3 + Ar while doping of Si into the BN film was induced by the simultaneous irradiation of an intense excimer laser with a pulse power of 490 mJ cm(-2), at a wavelength of 193 nm and at a repetition rate of 20 Hz. The source of dopant Si was supposed to be the Si substrate ablated at the initial stage of the film growth. The laser enhanced the doping (and/or diffusion) of Si into BN as well as the growth of sp(3)-bonded BN simultaneously in this method. P-type conduction of BN films was determined by the hot (thermoelectric) probe method. The BN/Si heterodiode with an essentially transparent p-type BN as a front layer is supposed to efficiently absorb light reaching the active region so as to potentially result in high efficiency.

    DOI: 10.1088/0022-3727/42/22/225107

  • Two-dimensional spatial profile of volume fraction of nanoparticles incorporated into a-Si : H films deposited by plasma CVD

    William Makoto Nakamura, Hiroomi Miyahara, Hiroshi Sato, Hidefumi Matsuzaki, Kazunori Koga, Masaharu Shiratani

    IEEE TRANSACTIONS ON PLASMA SCIENCE   36 ( 4 )   888 - 889   2008.8

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    Using an optical-scanning method, we obtained 2-D spatial profile of deposition rate of hydrogenated amorphous silicon (a-Si:H) films deposited by a multihollow discharge plasma CVD with a high spatial resolution. From the profile, we deduced 2-D spatial profile of the volume fraction of nanoparticles incorporated into films, since nanoparticles affect optical and electronic properties of a-Si:H films.

    DOI: 10.1109/TPS.2008.923830

  • Nanoparticle coagulation in fractionally charged and charge fluctuating dusty plasmas

    Shota Nunomura, Masaharu Shiratani, Kazunori Koga, Michio Kondo, Yukio Watanabe

    PHYSICS OF PLASMAS   15 ( 8 )   2008.8

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    The kinetics of nanoparticle coagulation has been studied in fractionally charged and charge fluctuating dusty plasmas. The coagulation occurs when the mutual collision frequency among nanoparticles exceeds their charging and decharging/neutralization frequency. Interestingly, the coagulation is suppressed while a fraction (several percent) of nanoparticles are negatively charged in a plasma, in which stochastic charging plays an important role. A model is developed to predict a phase diagram of the coagulation and its suppression. (C) 2008 American Institute of Physics.

    DOI: 10.1063/1.2972162

  • Temperature Dependence of Dielectric Constant of Nanoparticle Composite Porous Low-k Films Fabricated by Pulse Radio Frequency Discharge with Amplitude Modulation

    Shinya Iwashita, Michihito Morita, Hidefumi Matsuzaki, Kazunori Koga, Masaharu Shiratani

    JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 8 )   6875 - 6878   2008.8

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    Nanoparticle composite porous low-k films are deposited by pulse radio frequency (RF) discharge with the amplitude modulation (AM) of discharge voltage. The deposition rate obtained with AM is 0.65 nm/s, which is sevenfold as high as that obtained without AM. and porosity = 60-63&#37; and dielectric constant k = 1.1-1.4 for the films obtained with AM are nearly equal to those obtained without AM. The deposition of porous low-k films by pulse RF discharge with AM is a promising method for increasing the deposition rate with a less pronounced agglomeration and without variations in the properties of the films. With decreasing substrate temperature from 403 to 368 K, the porosity of the films increases from 3.5 to 60&#37;, leading to a reduction in their dielectric constant from 2.9 to 1.4. Substrate temperature is a key parameter that determines the porosity and dielectric constant of the porous low-k films.

    DOI: 10.1143/JJAP.47.6875

  • Discharge power dependence of H<inf>α</inf>intensity and electron density of Ar + H<inf>2</inf>discharges in H-assisted plasma CVD reactor

    Jun Umetsu, Kazunori Koga, Kazuhiko Inoue, Hidefumi Matsuzaki, Kosuke Takenaka, Masaharu Shiratani

    Surface and Coatings Technology   202 ( 22-23 )   5659 - 5662   2008.8

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    Discharge power dependence of H-alpha intensity and electron density of Ar+H-2 discharges in H-assisted plasma CVD reactor
    We have realized anisotropic deposition of Cu, for which Cu is preferentially filled from the bottom of trenches without being deposited on the sidewall of trenches, using H-assisted plasma CVD. To obtain information about a discharge condition to realize a high deposition rate, we have studied dependence of H-alpha 656.3 nm and At 811.5 nm intensities and electron density in the main discharge on the main discharge power, P-m, and in the discharge of H atom source on the discharge power of H atom source, P-H, as a parameter of a gas flow rate ratio R=H-2/(H-2+Ar). The results suggest that a high electron density in the main discharge and high fluxes of ions and H atoms to a substrate, all of which are needed for deposition of high purity Cu at a high deposition rate. are realized for P-m=45 W, P-H=500 W, and R=3.3&#37;. (C) 2008 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.surfcoat.2008.06.108

  • Growth Control of Clusters in Reactive Plasmas and Application to High-Stability a-Si: H Film Deposition

    Yukio Watanabe, Masaharu Shiratani, Kazunori Koga

    Advanced Plasma Technology   227 - 242   2008.4

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    DOI: 10.1002/9783527622184.ch12

  • Transport of nano-particles in capacitively coupled rf discharges without and with amplitude modulation of discharge voltage

    Kazunori Koga, Shinya Iwashita, Masaharu Shiratani

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   40 ( 8 )   2267 - 2271   2007.4

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    Transport of nano-particles in rf discharges without and with an amplitude modulation (AM) of the discharge voltage has been examined using a two-dimensional laser-light-scattering method. During the discharging period, nano-particles are mainly generated in the plasma/sheath boundary region near the powered electrode. They move away from their generation region towards the upper grounded electrode after turning off discharges due to thermophoretic force. Using AM discharges, nano-particles can be transported, during the modulation period, from their generation region to the plasma/sheath boundary region near the upper grounded electrode. The transport time is at least six times shorter than that after turning off unmodulated discharges. Two key parameters for the fast transport using AM discharges are the discharge voltage and the period of the AM.

    DOI: 10.1088/0022-3727/40/8/S05

  • Single step method to deposit Si quantum dot films using H-2+SiH4VHF discharges and electron mobility in a Si quantum dot solar cell

    Masaharu Shiratani, Kazunori Koga, Soichiro Ando, Toshihisa Inoue, Yukio Watanabe, Shota Nunomura, Michio Kondo

    SURFACE & COATINGS TECHNOLOGY   201 ( 9-11 )   5468 - 5471   2007.2

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    To fabricate quantum dot solar cells of a high efficiency at a low cost, here we propose a Si quantum dot film which is composed of Si nanocrystallites embedded into a-Si:H and a single step method to deposit such Si quantum dot films using H-2 + SiH4 VHF discharges. For the method, Si nano-crystallites of a small size dispersion and radicals produced in the discharges are co-deposited on a substrate to form Si quantum dot films. Using the method, we realized a volume fraction of dots in films of 0.3-70&#37;. Photo- and dark-conductivity of films are in a range of 10(-11)-10(-9) and 10(-5)-10(-4) S/cm, respectively. We have examined effects of the size dispersion of nano-crystallites on electron mobility in a quantum dot Si solar cell by a simulation. The electron mobility in films for a size dispersion of 0.37 nm is about 50&#37; of that in films for no size dispersion. (C) 2006 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.surfcoat.2006.07.012

  • A device for trapping nano-particles formed in processing plasmas for reduction of nano-waste

    Shinya Iwashita, Kazunori Koga, Masaharu Shiratani

    SURFACE & COATINGS TECHNOLOGY   201 ( 9-11 )   5701 - 5704   2007.2

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    Removal of nano-particles is important from the viewpoint that nano-materials may be hazardous to health when they deposit within the respiratory system. We have developed a method for measuring a sticking probability of nano-particles to a wall. The probability of nano-particles above 2 mn in size to a stainless-steel wall is close to 100&#37; at a low ambient pressure below about 160 Pa. Based on this result, we have developed a device for trapping nano-particles formed in low pressure processing plasmas in order to reduce nano-waste, that is, waste of mit in size. The device traps nano-particles by collision and attachment of nano-particles to its surface. The trapping efficiency of the device for nanoparticles above 2 mr, in size is more than 99.8&#37; at a low ambient pressure below about 160 Pa. (C) 2006 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.surfcoat.2006.07.060

  • Species responsible for Si-H-2 bond formation in a-Si : H films deposited using silane high frequency discharges

    M Shiratani, K Koga, N Kaguchi, K Bando, Y Watanabe

    THIN SOLID FILMS   506   17 - 21   2006.5

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    Species responsible for Si-H-2 bond formation in a-Si:H films have been studied by using a cluster-suppressed plasma CVD reactor of a diode configuration. The concentration of Si-H-2 bonds in a-Si:H films linearly decreases with decreasing the volume fraction V-f of clusters incorporated into the films, while the density of higher-order silane such as Si2H5 and Si3H7 correlates little with the bond concentration. The experimental results obtained using the diode configuration motivate us to employ a reactor of triode configuration in order to reduce the V-f value. The a-Si:H Schottky solar cell prepared with this configuration has the high initial fill factor FF=0.60 and high stabilized value after light soaking FF=0.56. (c) 2005 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.tsf.2005.08.015

  • Mechanism of Cu deposition from Cu(EDMDD)(2) using H-assisted plasma CVD

    K Takenaka, K Koga, M Shiratani, Y Watanabe, T Shingen

    THIN SOLID FILMS   506   197 - 201   2006.5

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    Mechanism of high purity Cu thin film deposition from a new F-free Cu complex, Cu(EDMDD)(2) have been studied using H-assisted plasma CVD (HAPCVD). The species of Cu(EDMDD) is the dominant neutral radical dissociated from Cu(EDMDD)2 by electron impact. In situ measurements by Fourier transform infrared (FTIR) spectroscopy show that H atoms are quite effective in removing impurities in Cu films. The simplified version of important surface reaction is Cu(EDMDD)+H -> Cu+H(EDMDD). Cu films deposited by HAPCVD have a low as-deposited resistivity of 1.84 mu Omega cm and is 20 nm thick in trenches 0.5 mu m wide and 2.73 mu m deep. (c) 2005 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.tsf.2005.08.028

  • Nano-particle formation due to interaction between H-2 plasma and carbon wall

    K Koga, Y Kitaura, M Shiratani, Y Watanabe, A Komori

    THIN SOLID FILMS   506   656 - 659   2006.5

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    Formation of carbon particles due to interaction between plasma and carbon fiber composite (CFC) or graphite targets has been studied using an electron cyclotron resonance (ECR) plasma device. The interaction produces two kinds of particles: small ones have a size of 2-25 nm, spherical shape; large ones have a size above 100 nm, irregular shape. Total amount and average size of small particles tend to decrease with increasing sheath voltage V-s between plasma and the carbon targets from 14 V to 214 V. Optical emission intensities of C and CH decrease with increasing V-s, while gas absorption rate to the target increases. These results suggest that carbon-containing species emitted from the carbon targets contribute to formation of small particles. (c) 2005 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.tsf.2005.08.062

  • Production of crystalline Si nano-clusters using pulsed H-2+SiH(4)VHFdischarges

    T Kakeya, K Koga, M Shiratani, Y Watanabe, M Kondo

    THIN SOLID FILMS   506   288 - 291   2006.5

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    Crystalline Si nano-clusters are successfully produced using pulsed H-2+SiH4 VHF discharges. Their size can be controlled by changing the discharge duration. Si clusters of 1.6 nm in size and 100&#37; crystallinity are produced. Collecting efficiency of them on the substrate decreases by one order of magnitude by heating it from room temperature to 200 degrees C, while their size is around 3 nm irrelevant to its temperature change. (c) 2005 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.tsf.2005.08.090

  • In situ simple method for measuring size and density of nanoparticles in reactive plasmas

    S Nunomura, M Kita, K Koga, M Shiratani, Y Watanabe

    JOURNAL OF APPLIED PHYSICS   99 ( 8 )   2006.4

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    A laser-light-scattering (LLS) method for measuring the size and density of nanoparticles generated in reactive plasmas has been developed. The size and density of the nanoparticles are determined from their thermal coagulation that takes place after turning off the discharge. The measurable size and density range of the LLS method is n(p)10(13) (m(-3/2))xd(p)(-5/2)L(-2)n(g)(-1), where n(p), d(p), L, and n(g) are the density, size, and diffusion length of the nanoparticles, and the density of a background gas, respectively. The method has been demonstrated by measurement of the size and density of nanoparticles formed by the radio-frequency discharge of dimethyldimethoxysilane Si(CH3)(2)(OCH3)(2) diluted with Ar. Using a simple optical setup for the LLS measurement, nanoparticles are detected down to approximate to 1 nm in size when they are generated at a density of approximate to 10(12) cm(-3). The developed method is widely applicable to other systems in which thermal coagulation takes place. (C) 2006 American Institute of Physics.

    DOI: 10.1063/1.2189951

  • Plasma anisotropic CVD of high purity Cu using Cu(hfac)2 Reviewed

    Masaharu Shiratani, Takao Kaji, Kazunori Koga, Yukio Watanabe, Tomohiro Kubota, Seiji Samukawa

    6th International Conference on Reactive Plasmas and 23rd Symposium on Plasma Processing   2006.1

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    Plasma anisotropic CVD of high purity Cu using Cu(hfac)2

  • Cluster-eliminating filter for depositing cluster-free a-Si : H films by plasma chemical vapor deposition

    K Koga, N Kaguchi, K Bando, M Shiratani, Y Watanabe

    REVIEW OF SCIENTIFIC INSTRUMENTS   76 ( 11 )   1 - 4   2005.11

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    A cluster-eliminating filter is developed to reduce a volume fraction V-F of amorphous silicon nanoparticles above approximately 1 nm in size (referred to as a cluster) incorporated into a-Si:H films. The filter reduces the V-F value by using the difference between a sticking probability of clusters and a surface reaction probability of SiH3 radicals, which are the predominant deposition radicals. By employing the filter together with a cluster-suppressed plasma chemical vapor deposition reactor, the V-F value is reduced below 1/180 compared to that for the conventional device quality films. Such cluster-free a-Si:H films have an extremely small hydrogen concentration associated with Si-H-2 bonds below 5.46x10(-3) at. &#37;. (c) 2005 American Institute of Physics.

    DOI: 10.1063/1.2126572

  • Control of deposition profile of copper for large-scale integration (LSI) interconnects by plasma chemical vapor deposition

    K Takenaka, M Shiratani, M Takeshita, M Kita, K Koga, Y Watanabe

    PURE AND APPLIED CHEMISTRY   77 ( 2 )   391 - 398   2005.2

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    H-assisted plasma chemical vapor deposition (HAPCVD) realizes control of deposition profile of Cu in trenches. The key to the control is ion irradiation to surfaces. With increasing the flux and energy of ions, the profile changes from conformal to subconformal and then to an anisotropic one, for which Cu material is filled from the bottom of the trench without deposition on the sidewall. H-3(+) and ArH+ are identified as the major ionic species which contribute to the control, and hence the deposition profile also depends on a ratio R = H-2/(Ar + H-2).

    DOI: 10.1351/pac200577020391

  • Correlation between volume fraction of clusters incorporated into a-Si : H films and hydrogen content associated with Si-H-2 bonds in the films

    K Koga, N Kaguchi, M Shiratani, Y Watanabe

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A   22 ( 4 )   1536 - 1539   2004.7

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    A downstream-cluster-collection method of high sensitivity has been developed to obtain information on size distribution, density, shape, and structure of clusters formed in reactive plasmas. The method have been applied together with a cluster-suppressed plasma chemical vapor deposition method in order to study a correlation between a volume fraction V-f of clusters incorporated into a-Si:H films and a hydrogen content C-H(SiH2) associated with Si-H-2 bonds in the films. The C-H(SiH2) value decreases almost linearly from 0.6 at. &#37; to 0.05 at. &#37; with decreasing V-f by about one order of magnitude. The result indicates that the incorporation of clusters, above about 1 nm in size, of amorphous structure into a-Si:H films is an important origin of Si-H-2 bonds in the films. (C) 2004 American Vacuum Society.

    DOI: 10.1116/1.1763905

  • Anisotropic deposition of Cu in trenches by H-assisted plasma chemical vapor deposition

    K Takenaka, M Kita, T Kinoshita, K Koga, M Shiratani, Y Watanabe

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A   22 ( 4 )   1903 - 1907   2004.7

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    We have realized anisotropic deposition of Cu, for which Cu is filled preferentially from the bottom of trenches without being deposited on their sidewall, using H-assisted plasma chemical vapor deposition. The anisotropic deposition has two interesting features. One is the fact that the narrower the width of trench, the faster the deposition rate on its bottom becomes. The other is the self-limiting characteristic, that is the deposition in the trench stops automatically just after filling it completely. Such a type of deposition has a potential to overcome common problems associated with conformal filling: namely, small crystal grain size below half of the trench width, and formation of a seam with residual impurities of relatively high concentration. (C) 2004 American Vacuum Society.

    DOI: 10.1116/1.1738663

  • Carbon particle formation due to interaction between H-2 plasma and carbon fiber composite wall

    K Koga, R Uehara, Y Kitaura, M Shiratani, Y Watanabe, A Komori

    IEEE TRANSACTIONS ON PLASMA SCIENCE   32 ( 2 )   405 - 409   2004.4

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    Formation of carbon particles due to plasma surface interaction has been studied using an electron cyclotron resonance (ECR) plasma device. The interaction produces two sizes of groups: small spherical ones of 2-25 nm in size and large particles of irregular shape and above 100 nm in size. The latter are considered to be flakes peeled from carbon films deposited on the reactor wall. The total amount and average size of small particles tends to decrease with increasing the sheath voltage V. between plasma and the carbon fiber composite (CFC) wall from 14 to 214 V. Optical emission intensities of CH and C as well as gas absorption rate to the CFC wall also decrease with increasing V-S. These results suggest that the carbon-containing species emitted from the CFC wall contribute to formation of small particles.

    DOI: 10.1109/TPS.2004.828129

  • Cluster-suppressed plasma CVD for deposition of high quality a-Si : H films

    M Shiratani, K Koga, Y Watanabe

    THIN SOLID FILMS   427 ( 1-2 )   1 - 5   2003.3

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    Correlation between microstructure parameter of a-Si:H films and cluster amount in silane discharges is revealed by using a cluster-suppressed plasma CVD method. The microstructure parameter R-alpha of a-Si:H films decreases below 0.003 with decreasing the cluster amount. A Schottky solar cell of a-Si:H films of Ralpha = 0.057 shows a high initial fill factor (FF) of 0.57 and high stabilized FF of 0.53. In addition, amount of clusters incorporated into a-Si:H films prepared for a discharge frequency f = 60 MHz is significantly low compared to those for f = 13.56, 40 MHz. These results suggest that the deposition of high quality a-Si:H films at a high rate can be realized by the cluster-suppressed plasma CVD method together with very high frequency discharges. (C) 2002 Elsevier Science B.V. All rights reserved.

    DOI: 10.1016/S0040-6090(02)01171-9

  • Cluśter-suppressed plasma chemical vapor deposition method for high quality hydrogenated amorphous silicon films

    Kazunori Koga, Motohide Kai, Masaharu Shiratani, Masaharu Shiratani, Yukio Watanabe, Nobuhiro Shikatani

    Japanese Journal of Applied Physics, Part 2: Letters   41 ( 2B )   L168 - L170   2002.2

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    Cluster-suppressed plasma chemical vapor deposition method for high quality hydrogenated amorphous silicon films
    We have developed a novel plasma chemical vapor deposition (PCVD) method for preparing high quality hydrogenated amorphous silicon (a-Si:H) films, which suppresses effectively growth of clusters by transporting them out of the reactor using gas flow and thermophoresis. By utilizing this cluster-suppressed PCVD method, we have demonstrated deposition of quite high quality a-Si:H films, microstructure parameter R-alpha of which can be reduced below 0.003. The decrease in Ralpha value is closely related to the decrease in cluster amount. Preliminary evaluation of fill factor (FF) of the a-Si:H Schottky solar cell of the a-Si:H films of R-alpha = 0.057 shows the high initial value FFi = 0.57 and high stabilized value after-light-soaking FFa = 0.53.

    DOI: 10.1143/JJAP.41.L168

  • H-assisted plasma CVD of Cu films for interconnects in ultra-large-scale integration

    Masaharu Shiratani, Hong Jie Jin, Kosuke Takenaka, Kazunori Koga, Toshio Kinoshita, Yukio Watanabe

    SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS   2 ( 3-4 )   505 - 515   2001.9

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    H-assisted plasma CVD (HAPCVD), in which Cu(hfac)(2) is supplied as the source material, realizes control of qualities of Cu films, since H irradiation is effective in purifying the Cu films, increasing the grain size, and reducing the surface roughness. Conformal deposition in fine trenches can be realized by decreasing dissociation degree of Cu(hfac)(2) using the HAPCVD. Cu(hfac) is identified as the radical mainly contributing to the deposition. Based on the results, we proposed a model in which Cu(hfac) and H react on surfaces to deposit Cu films. We also demonstrated conformal deposition of smooth Cu films of 30 nm thickness and 1.9 mu Omega cm resistivity and almost complete Cu filling in trenches 0.35 mu m wide and 1.6 mu m deep using the HAPCVD. (C) 2001 Elsevier Science Ltd. All rights reserved.

    DOI: 10.1016/S1468-6996(01)00131-0

  • In situ observation of nucleation and subsequent growth of clusters in silane radio frequency discharges

    K Koga, Y Matsuoka, K Tanaka, M Shiratani, Y Watanabe

    APPLIED PHYSICS LETTERS   77 ( 2 )   196 - 198   2000.7

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    Growth processes of clusters in low-pressure and low-power silane radio frequency discharges are studied by using the newly developed double-pulse-discharge method which realizes in situ measurement of their size and density in a size range of 0.5-4 nm. The clusters begin to be composed of two size groups at about 10 ms after the discharge initiation: clusters in the small size group have an almost constant average size of about 0.5 nm through the discharge period, while those in the large one grow at about 4 nm/s in a monodisperse way. Time evolution of the measured average sizes and densities in the groups is transformed into that of size distributions assuming that the density of SinHx clusters for the small group decreases exponentially with the increase in the number of Si atoms, n, of them, and the size distribution for the large group is the lognormal one. The results show that a critical cluster size for nucleation is SinHx (n similar to 4). (C) 2000 American Institute of Physics. [S0003-6951(00)01828-3].

    DOI: 10.1063/1.126922

  • Effects of gas temperature gradient, pulse discharge modulation, and hydrogen dilution on particle growth in silane RF discharges

    M Shiratani, S Maeda, K Koga, Y Watanabe

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   39 ( 1 )   287 - 293   2000.1

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    The effects of gas temperature gradient, pulse discharge modulation, and hydrogen dilution on the growth of particles below about 10 nm in size in silane parallel-plate RF discharges are studied using a high-sensitivity photon-counting laser-lightscattering (PCLLS) method. Thermophoretic force due to the gas temperature gradient between the electrodes drives neutral particles above a few nm in size toward the cool RF electrode which is at room temperature. Pulse discharge modulation is much more effective in reducing the particle density when it is combined with the gas temperature gradient, and particles above a few nm in size cannot be detected by the PCLLS method even after 2 h. Hydrogen dilution of a high H-2/SiH4 concentration ratio above about 5 is also useful in suppressing particle growth in the radical production region around the plasma/sheath boundary near the RF electrode.

    DOI: 10.1143/JJAP.39.287

  • 非対称イオンシースにおける局所構造形成の観測

    古閑 一憲, 河合 良信

    九州大学大学院総合理工学報告   20 ( 2 )   157 - 161   1998.9

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    Observation of the Formation of Local Structures in the Asymmetric Ion Sheath

    DOI: 10.15017/17465

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Presentations

  • High Throughput Deposition of Hydrogenated Amorphous Carbon Films using High-Pressure Ar+CH4 Plasmas International conference

    K.Koga‚ S. H. Hwang‚ K. Kamataki‚ N. Itagaki‚ M. Shiratani

    ICMCTF2021  2021.4 

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    Event date: 2021.4

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン  

  • プラズマを用いてカーボンナノ粒子層を含むミルフィーユ型 a-C:H 膜の機械的特性

    古閑一憲, 黄成和, Y.Hao, 鎌滝晋礼, 奥村賢直, 板垣奈穂, 白谷正治

    第68回応用物理学会春季学術講演会  2021.3 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • クロージングリマークス(招待講演) Invited

    古閑一憲

    応用物理学会プラズマエレクトロニクス分科会30周年記念シンポジウム  2021.3 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • プラズマCVD中飛行時間によるカーボンナノ粒子サイズ制御

    古閑一憲, S. H. Hwang, Y. Hao, P. Attir, 奥村賢直,鎌滝晋礼,板垣奈穂, 白谷正治

    日本物理学会第76回年次大会  2021.3 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Green Route for Nitrogen-Enriched Organic Manure Synthesis Using Plasma Technology(Invited) Invited International conference

    K. Koga

    ISPlasma2021/IC-PLANTS2021  2021.3 

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    Event date: 2021.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Influences of Plasma Treatment of Seeds on their Molecular Responses(Invited) Invited International conference

    K. Koga

    3rd International Workshop on Plasma Agriculture  2021.3 

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    Event date: 2021.2 - 2021.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Germany  

  • CVDプラズマ中のナノ粒子の成長制御と応用(招待講演) Invited

    古閑一憲

    第72回CVD研究会  2020.12 

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    Event date: 2020.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Impact of Plasma Treatment Time on the Barley Seeds using Electron Paramagnetic Resonance International conference

    K. Koga, P. Attri, T. Anan, R. Arita, H. Tanaka, T. Okumura, D. Yamashita, K. Matsuo, K. Kanataki, N. Itagaki, M. Shiratani, Y. Ishibashi

    第30回日本MRS年次大会  2020.12 

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    Event date: 2020.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Role of seed coat color and harvest year on growth enhancement by plasma irradiation to seeds International conference

    K. Koga, P. Attri, K. Ishikawa, T. Okumura, K. Matsuo, D. Yamashita, K. Kamataki, N. Itagaki, M. Shiratani, V. Mildaziene

    The 73rd Annual Gaseous Electronics Conference  2020.10 

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    Event date: 2020.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン  

  • マルチホロー放電プラズマ CVDを用いて作製したカーボンナノ粒子輸送量に対する電極基板間距離の効果

    古閑一憲, S. H. Hwang, 奥村賢直, Y. Hao, 山下大輔, 松尾かよ, 板垣奈穂, 鎌滝晋礼, 白谷正治

    2020年度(第73回)電気・情報関係学会九州支部連合大会  2020.9 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • プラズマCVD技術文献のテキストマイニングを用いた単語のインパクトの解析

    古閑一憲, 奥村賢直, 鎌滝晋礼, 板垣奈穂, 白谷正治, 谷口雄太, 池田大輔

    第81回応用物理学会秋季学術講演会  2020.9 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • プラズマCVDを用いたa-Si:H堆積薄膜中のSi-H/Si-H2結合形成の活性化エネルギー

    古閑一憲, 鎌滝晋礼, 奥村賢直, 板垣奈穂, 白谷正治

    日本物理学会 2020年秋季大会  2020.9 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • プラズマと薄膜のナノ界面相互作用による結合形成の活性化エネルギー評価

    古閑一憲, 原尚志, 鎌滝晋礼, 板垣奈穂, 白谷正治

    日本物理学会第75回年次大会(2020年)  2020.3 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  • ⾮平衡プラズマを⽤いたサイズ制御したカーボンナノ粒⼦の連続作 製と堆積

    古閑⼀憲, 黄成和, 石川健治, P. Attri, 松尾かよ, 山下⼤輔, 板垣奈穂, 鎌滝晋礼, 白谷正治

    第67回応用物理学会春季学術講演会  2020.3 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:上智大学   Country:Japan  

  • ⾼温障害を持つイネ種⼦の発芽特性に対するプラズマ照射の効果

    古閑⼀憲, 石橋勇志, S. Chetphilin, 田中颯, 佐藤僚哉, 有田涼, 廣松真弥, 石川健治, P. Attri, 松尾かよ, 山下⼤輔, 板垣奈穂, 鎌滝晋礼, 白谷正治

    第67回応用物理学会春季学術講演会  2020.3 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:上智大学   Country:Japan  

  • プラズマ照射種子を用いた圃場実験の結果報告(招待講演) Invited

    古閑⼀憲

    第1回プラズマ農業フィールドテスト研究会  2020.2 

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    Event date: 2020.2

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:Hotel & Resorts BEPPUWAN, 大分   Country:Japan  

  • プラズマ照射した種籾の圃場栽培試験

    古閑一憲, 佐藤僚哉, 吉田知晃, 有田涼, 田中颯, 廣松真弥, 鎌滝晋礼, 板垣奈穂, 白谷正治

    第36回プラズマ・核融合学会年会  2019.12 

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    Event date: 2019.11 - 2019.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:中部大学   Country:Japan  

  • Metabolomics Approach for Studying Effects of Atmospheric Air Plasma Irradiation to Seeds (Keynote) Invited International conference

    K. Koga, M. Shiratani, V. Mildaziene

    29th Annual Meeting of MRS-J  2019.11 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Impact of Atmospheric Pressure Plasma Irradiation to Seeds on Agricultural Productivity International conference

    K. Koga, M. Shiratani

    3rd Asia-Pacific Conference on Plasma Physics (AAPPS-DPP2019)  2019.11 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Crowne Plaza Hefei, Hefei   Country:China  

  • Rate Limiting Factors of Low Pressure Plasma-catalytic CO2 Methanation Process International conference

    K. Koga, A. Yamamoto, K. Kamataki, N. Itagaki, M. Shiratani

    AVS 66th International Symposium & Exhibition  2019.10 

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    Event date: 2019.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Greater Columbus Convention Center, Columbus, Ohio   Country:Other  

  • Non-equilibrium nanoparticle composite film process using reactive plasmas (Invited) Invited International conference

    K. Koga, M. Shiratani

    Advanced Metallization Conference 2019: 29th Asian Session (ADMETA Plus 2019)  2019.10 

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    Event date: 2019.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:The University of Tokyo   Country:Japan  

  • Ar+CH4プラズマCVDを用いて堆積した水素化アモルファスカーボン薄膜の堆積特性に対する電極基板間距離依存性

    古閑一憲, Sung Hwa Hwang, 鎌滝晋礼, 板垣奈穂, 白谷正治

    2019年度(第72回)電気・情報関係学会九州支部連合大会  2019.9 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州工業大学   Country:Japan  

  • プラズマ生成前駆体制御による単分散ナノ粒子合成

    古閑 一憲, 鎌滝 晋礼, 白谷 正治

    2019年第80回応用物理学会秋季学術講演会  2019.9 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  • Plasmas - from Laboratory to Table - (Invited) Invited International conference

    K. Koga, M. Shiratani

    The 12th Asian-European International Conference on Plasma Surface Engineering (AEPSE2019)  2019.9 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Maison Glad Hotel, Jeju Island   Country:Korea, Republic of  

  • Synthesis and deposition of a-C:H nanoparticles using reactive plasmas with a fast gas flow International conference

    K. Koga, S. H. Hwang, K. Kamataki, N. Itagaki, M. Shiratani

    The Korea-Japan Workshop on Dust Particles in Plasmas  2019.8 

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    Event date: 2019.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:NFRI, Daejeon   Country:Korea, Republic of  

  • Sputter deposition of wide bandgap (ZnO)x(AlN)1-x alloys: a new material system with tunable bandgap International conference

    S. Urakawa, N. Miyahara, D. Yamashita, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    XXXIV International Conference on Phenomena in Ionized Gases (XXXIV ICPIG) & 10th International Conference on Reactive Plasmas (ICRP-10)  2019.7 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sapporo Education and Culture Hall   Country:Japan  

  • Growth Mechanism of Carbon Nanoparticles In Multi-Hollow Discharge Plasma Chemical Vapor Deposition (Invited) Invited International conference

    K. Koga, S. H. Hwang, K. Kamataki, N. Itagaki M. Shiratani

    XXXIV International Conference on Phenomena in Ionized Gases (XXXIV ICPIG) & 10th International Conference on Reactive Plasmas (ICRP-10)  2019.7 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sapporo Education and Culture Hall   Country:Japan  

  • マルチホロー放電プラズマCVD法による高品質SiN膜の低温(100度)形成

    永石翔大, 佐々木勇輔, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    令和元年度日本表面真空学会 九州支部学術講演会(九州表面・真空研究会2019)  2019.6 

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    Event date: 2019.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡大学   Country:Japan  

  • Deposition of Carbon Nanoparticles Using Multi-Hollow Discharge Plasma CVD for Synthesis of Carbon Nanoparticle Composite Films International conference

    K. Koga, S. H. Hwang, T. Nakatani, J. S. Oh, K. Kamataki, N. Itagaki, M.Shiratani

    46th International Conference on Metallurgical Coatings and Thin Films (ICMCTF 2019)  2019.5 

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    Event date: 2019.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:San Diego, CA   Country:Other  

  • 微粒子プラズマにおける2体衝突運動の顕微高速観察

    古閑一憲, 大友洋, 真銅雅子, 鎌滝晋礼, 板垣奈穂, 白谷正治

    日本物理学会第74回年次大会(2019年)  2019.3 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • Spatial Profile of RONS Dose Supplied by a Scalable DBD Device International conference

    K. Koga, Y. Wada, R. Sato, R. Shimada, D. Yamashita, K. Kamataki, N. Itagaki, M. Shiratani, T. Kawasaki

    The 3rd Asian Applied Physics Conference  2018.12 

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    Event date: 2018.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka University   Country:Japan  

  • カイワレ大根種皮の色素に対するプラズマ照射の効果

    古閑一憲, 嶋田凌太郎, 和田陽介, 佐藤僚哉, 山下大輔, 鎌滝晋礼, 板垣奈穂, 白谷正治, Vida Mildaziene

    第35回プラズマ・核融合学会年会  2018.12 

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    Event date: 2018.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪大学   Country:Japan  

  • Evaluation of Amount of RONS Transport and Absorption of Seeds International conference

    K. Koga, Y. Wada, R. Sato, D. Yamashita, K. Kamataki, N. Itagaki, M. Shiratani

    2018 MRS Fall Meeting & Exhibit  2018.11 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston, Massachusetts   Country:Other  

  • Innovative Agricultural Productivity Improvement Using Atmospheric Pressure Plasmas (Invited) Invited International conference

    K. Koga, M. Shiratani

    2018 MRS Fall Meeting & Exhibit  2018.11 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston, Massachusetts   Country:Other  

  • 反応性プラズマとナノ粒子相互作用ゆらぎネットワーク解析

    古閑一憲

    第34回九州・山口プラズマ研究会  2018.11 

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    Event date: 2018.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:シーサイドホテル屋久島, 鹿児島   Country:Japan  

  • Synthesis of Hydrogenated Amorphous Carbon Nanoparticles using High-Pressure CH4+Ar Plasmas and Their Deposition International conference

    K. Koga, S. H. Hwang, K. Kamataki, N. Itagaki, T. Nakatani, M. Shiratani

    AVS 65th International Symposium & Exhibition  2018.10 

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    Event date: 2018.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Long Beach Convention Center, Long Beach, CA   Country:Other  

  • プラズマ中二体微粒子の衝突解析による相互作用揺らぎの研究

    古閑一憲, 大友洋, 周靭, 山下大輔, 鎌滝晋礼, 板垣奈穂, 白谷正治

    2018年第79回応用物理学会秋季学術講演会  2018.9 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  • Siネットワーク秩序性に対する製膜前駆体の効果

    古閑一憲, 田中和真, 原尚志, 石榴, 中野慎也, 山下大輔, 鎌滝晋礼, 板垣奈穂, 白谷正治

    2018年第79回応用物理学会秋季学術講演会  2018.9 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  • Effects of cluster deposition on spatial profile of Si-Hx bond density in a-Si:H films International conference

    K. Koga, K. Tanaka, H. Hara, S. Nagaishi, D. Yamashita, K. Kamataki, N. Itagaki, M. Shiratani

    2018 International Conference on Solid State Devices and Materials (SSDM2018)  2018.9 

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    Event date: 2018.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:The University of Tokyo   Country:Japan  

  • Challenge to precise control of chemical bond configuration in plasma CVD films International conference

    K. Koga, M. Shiratani

    RUB Japan Science Days 2018  2018.7 

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    Event date: 2018.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Bochum   Country:Germany  

  • Control of synthesis and deposition of nanoparticles using a multi-hollow discharge plasma CVD International conference

    K. Koga, M. Shiratani

    Workshop "Plasma surface interaction for technological applications"  2018.6 

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    Event date: 2018.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:University of Kiel   Country:Germany  

  • High energy leverage method on growth enhancement of bio-mass plants using plasma seed treatment International conference

    K. Koga, Y. Wada, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani

    7th International Conference on Plasma Medicine (ICPM-7)  2018.6 

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    Event date: 2018.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Philadelphia   Country:Other  

  • A deep insight of plasma-nanoparticle interaction Invited International conference

    K. Koga, K. Kamataki, N. Itagaki, M. Shiratani

    19th International Congress on Plasma Physics  2018.6 

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    Event date: 2018.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Vancouver   Country:Canada  

  • 水素原子源付プラズマCVD法に任意電圧波形を併用したa-C:H薄膜の堆積

    古閑一憲, 山木健司, 方トウジュン, 山下大輔, 徐鉉雄, 板垣奈穂, 白谷正治

    第65回応用物理学会春季学術講演会  2018.3 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  • 大気圧空気誘電体バリア放電プラズマを照射したカイワレ種子の電子スピン共鳴分光

    古閑一憲, 和田陽介, 佐藤僚哉, 山下大輔, 徐鉉雄, 板垣奈穂, 白谷正治

    第65回応用物理学会春季学術講演会  2018.3 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  • 任意電圧波形を用いたC7H8+Ar+H2プラズマ生成

    古閑一憲, 山木健司, 方トウジュン, 山下大輔, 徐鉉雄, 板垣奈穂, 白谷正治

    平成30年電気学会全国大会  2018.3 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • Effects of RONS Dose on Plasma Induced Growth Enhancement of Radish Sprout International conference

    K. Koga, Y. Wada, R. Sato, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani

    2nd International Workshop On Plasma Agriculture (IWOPA2)  2018.3 

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    Event date: 2018.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Takayama Civic Cultural Hall, Gifu   Country:Japan  

  • Plasma Enhanced Carbon Recycling for Large-Scale Introduction of Solar Cells to Energy Supply Chain Invited International conference

    K. Koga, Y. Wada, R. Sato, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani

    5th Korea-Japan Joint Symposium on Advanced Solar Cells 2018, 2nd International Symposium on Energy Research and Application  2018.2 

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    Event date: 2018.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sungkyunkwan University, Suwon   Country:Korea, Republic of  

  • Towards ultra-high capacity batteries International conference

    K. Koga, G. Uchida, M. Shiratani

    Joint workshop btw SKKU and Kyushu University Emerging materials and devices  2018.1 

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    Event date: 2018.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyushu University   Country:Japan  

  • A new insight into nanoparticle-plasma interactions (Invited) Invited International conference

    K. Koga, K. Mori, R. Zhou, H. Seo, N. Itagaki, M. Shiratani

    JP-KO dust workshop  2017.12 

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    Event date: 2017.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:HanYang University, Seoul   Country:Korea, Republic of  

  • Evaluation of coupling among interaction fluctuations in nanoparticle growth in reactive plasmas International conference

    K. Koga, K. Mori, R. Zhou, H. Seo, N. Itagaki, M. Shiratani

    18th Workshop on Fine Particle Plasmas  2017.12 

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    Event date: 2017.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:National Institute of Fusion Science, Gifu   Country:Japan  

  • Deposition of High Quality Silicon Thin Films Utilizing Nanoparticles Trapped in Plasmas International conference

    K. Koga, T. Kojima, S. Toko, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani

    27th annual meeting of MRS-J  2017.12 

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    Event date: 2017.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Effects of Number Density of Seeds on Plasma Induced Plant Growth Enhancement International conference

    K. Koga, Y. Wada, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani

    27th annual meeting of MRS-J  2017.12 

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    Event date: 2017.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Effects of Gas Flow Velocity on Plant Growth of Radish Sprout International conference

    K. Koga, Y. Wada, R. Sato, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani

    The 2nd Asian Applied Physics Conference (Asian-APC)  2017.12 

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    Event date: 2017.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Miyazaki Kanko Hotel   Country:Japan  

  • 植物種子へのプラズマ照射効果による成長促進とその機序(シンポジウム講演) Invited

    古閑一憲, 白谷正治

    Plasma Conference 2017  2017.11 

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    Event date: 2017.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:姫路商工会議所   Country:Japan  

  • Development of a fine particle transport analyzer for processing plasmas International conference

    K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani

    The 39th International Symposium on Dry Process (DPS 2017)  2017.11 

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    Event date: 2017.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tokyo Institute of Technology   Country:Japan  

  • 反応性プラズマを用いた物質機能の初期階層形成

    古閑一憲

    第33回九州・山口プラズマ研究会  2017.11 

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    Event date: 2017.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:長崎にっしょうかん   Country:Japan  

  • Surface-driven CH4 generation from CO2 in Low-pressure Non-thermal Plasma International conference

    K. Koga, S. Toko, S. Tanida, M. Shiratani

    American Vacuum Society 64th International Symposium and Exhibition (AVS64)  2017.10 

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    Event date: 2017.10 - 2017.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tampa, Florida   Country:Other  

  • 火星上CO2のCH4資源化のための低温低圧プラズマ触媒プロセス

    古閑一憲, 都甲将, 谷田知史, 白谷正治, 細田聡史, 星野健

    第61回宇宙科学技術連合講演会  2017.10 

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    Event date: 2017.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ, 新潟   Country:Japan  

  • スケーラブルDBDプラズマのRONS照射量に対する空気流れの効果

    古閑一憲, 和田陽介, 山下大輔, 徐鉉雄, 板垣奈穂, 白谷正治

    平成29年度(第70回)電気・情報関係学会九州支部連合大会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:琉球大学   Country:Japan  

  • Hysteresis in Plasma CVD: a new path for high quality film deposition Invited International conference

    K. Koga, S. Toko, M. Shiratani

    11th Asian-European International Conference on Plasma Surface Engineering (AEPSE2017)  2017.9 

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    Event date: 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:International Convention Center Jeju   Country:Korea, Republic of  

  • プラズマ照射した種籾への催芽処理の効果

    古閑一憲, 和田陽介, 徐鉉雄, 板垣奈穂, 白谷正治, 橋本昌隆, 小島昌治

    第78回応用物理学会秋季学術講演会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場, 福岡国際センター   Country:Japan  

  • Synthesis of Nanoparticles Using Low Temperature Plasmas and Its Application to Solar Cells and Tracers in Living Body (Invited) Invited International conference

    K. Koga, H. Seo, A. Tanaka, N. Itagaki, M. Shiratani

    231st Meeting of Electrochemical Society (ECS)  2017.5 

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    Event date: 2017.5 - 2017.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hilton New Orleans Riverside, New Orleans, Louisiana   Country:Other  

  • 低温プラズマによるナノ粒子の合成と太陽電池への応用

    古閑一憲, 徐鉉雄, 板垣奈穂, 白谷正治

    電子情報通信学会有機エレクトロニクス研究会  2017.4 

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    Event date: 2017.4

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:龍郷町生涯学習センター(鹿児島県奄美大島)   Country:Japan  

  • Corrational study of fluctuation of coupling between plasmas and nanoparticles International conference

    K. Koga, K. Mori, H. Seo, N. Itagaki, M. Shiratani

    9th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 10th International Conference on Plasma Nanotechnology and Science (ISPlasma2017/IC-PLANTS2017)  2017.3 

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    Event date: 2017.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Chubu University   Country:Japan  

  • Long-term evaluation of In nanoparticle transport in living body International conference

    K. Koga, A. Tanaka, M. Hirata, T. Amano, T. Sarinont, H. Seo, N. Itagaki, M. Shiratani

    9th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 10th International Conference on Plasma Nanotechnology and Science (ISPlasma2017/IC-PLANTS2017)  2017.3 

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    Event date: 2017.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Chubu University   Country:Japan  

  • Comparision of Gamma irradation and scalable DBD on the declorization of Dyes International conference

    K. Koga, P. Attri, T. Sarinont, H. Seo, N. Itagaki, M. Shiratani

    9th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 10th International Conference on Plasma Nanotechnology and Science (ISPlasma2017/IC-PLANTS2017)  2017.3 

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    Event date: 2017.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Chubu University   Country:Japan  

  • 九州大学における反応性プラズマ精密制御CVD法の紹介(招待講演) Invited

    古閑一憲

    第1回産学共同研究検討会  2017.1 

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    Event date: 2017.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • Time evolution of cross-correlation between two fluctuations of couplings between plasmas and nanoparticles in amplitude modulated discharges International conference

    K. Koga, K. Mori, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani

    17th Workshop on Fine Particle Plasmas and JAPAN-KOREA Workshop on Dust Particles 2016  2016.12 

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    Event date: 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:National Institute of Fusion Science, Gifu   Country:Japan  

  • Dependence of amount of plasma activated water on growth enhancement of radish sprout International conference

    K. Koga, T. Sarinont, R. Katayama, Y. Wada, H. Seo, N. Itagaki, M. Shiratani

    26th annual meeting of MRS-J  2016.12 

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    Event date: 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Comparative study on death of cells irradiated by non-thermal plasma, X-ray, and UV International conference

    K. Koga, T. Amano, T. Sarinont, R. Katayama, Y. Wada, H. Seo, N. Itagaki, M. Shiratani, A. Tanaka, Y. Nakatsu, T. Kondo

    The 1st Asian Applied Physics Conference (Asian-APC)  2016.12 

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    Event date: 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tsushima, Nagasaki   Country:Japan  

  • 小型ダスト飛跡分析装置を用いたミラー上ダスト堆積抑制の検討

    古閑一憲, 片山龍, 方韜鈞, 山下大輔, 徐鉉雄, 板垣奈穂, 白谷正治, 増崎貴, 芦川直子, 時谷政行, 西村清彦, 相良明男

    第33回プラズマ・核融合学会年会  2016.12 

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    Event date: 2016.11 - 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東北大学   Country:Japan  

  • プラズマとナノ粒子の相互作用ゆらぎの2次元空間構造の時間発展

    古閑一憲, 森研人, 徐鉉雄, 板垣奈穂, 白谷正治

    第33回プラズマ・核融合学会年会  2016.11 

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    Event date: 2016.11 - 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東北大学   Country:Japan  

  • プラズマCVDを用いた高効率低劣化Si薄膜太陽電池の作製(招待講演) Invited

    古閑一憲

    第33回プラズマ・核融合学会年会  2016.11 

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    Event date: 2016.11 - 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東北大学   Country:Japan  

  • プラズマ計測・診断 -反応性プラズマ中微粒子を中心として- (招待講演) Invited

    古閑一憲

    第27回プラズマエレクトロニクス講習会  2016.11 

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    Event date: 2016.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京大学   Country:Japan  

  • Control of Plant Growth by RONS Produced Using Nonthermal Atmospheric Air Plasma International conference

    K. Koga, T. Sarinont, M. Shiratani

    American Vacuum Society 63rd International Symposium and Exhibition (AVS63)  2016.11 

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    Event date: 2016.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nashville, Tennessee   Country:Other  

  • Comparative study of non-thermal atmospheric pressure discharge plasmas for life science applications International conference

    K. Koga, R. Katayama, T. Sarinont, H. Seo, N. Itagaki, P. Attri, E. L. Quiros, .A. Tanaka, M. Shiratani

    69th Annual Gaseous Electronics Conference (GEC2016)  2016.10 

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    Event date: 2016.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ruhr-Universität Bochum   Country:Germany  

  • 火星上でのロケット燃料生成を目的とした低温低圧放電プラズマによるサバティエ反応

    古閑一憲, 都甲将, 白谷正治

    第60回宇宙科学技術連合講演会  2016.9 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:函館アリーナ   Country:Japan  

  • Time development of response of cells irradiated by non-thermal atmospheric air plasma International conference

    K. Koga, T. Amano, Y. Nakatsu, H. Seo, N. Itagaki, A. Tanaka, T. Kondo, M. Shiratani

    6th International Conference on Plasma Medicine (ICPM6)  2016.9 

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    Event date: 2016.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Slovak University of Technology   Country:Other  

  • Nitrite concentration of plants grown from seeds irradiated by air dielectric barrier discharge plasmas International conference

    K. Koga, T. Sarinont, P. Attri, M. Shiratani

    20th International Vacuum Congress (IVC-20)  2016.8 

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    Event date: 2016.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Busan Exhibition Convention Center   Country:Korea, Republic of  

  • QCMを用いたLHD内ダスト堆積量のその場測定

    古閑一憲, 片山龍, 方韜鈞, 山下大輔, 徐鉉雄, 板垣奈穂, 白谷正治, 増崎貴, 芦川直子, 時谷政行, 西村清彦, 相良明男, LHD実験グループ

    第11回核融合エネルギー連合講演会  2016.7 

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    Event date: 2016.7

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • プラズマ中微粒子を用いたプラズマポテンシャルゆらぎの評価

    古閑一憲, 添島雅大, 伊藤鉄平, 徐鉉雄, 板垣奈穂, 白谷正治

    日本物理学会第71回年次大会  2016.3 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東北学院大学   Country:Japan  

  • 「プラズマ材料科学の未来を語る」(低圧非平衡プラズマプロセス) (招待講演) Invited

    古閑一憲

    第125回研究会 APSPT9-SPSM28サテライトミーティング『プラズマ材料科学の未来を語る』  2016.2 

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    Event date: 2016.2

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:JR博多シティ会議室   Country:Japan  

  • 振幅変調反応性高周波放電中のナノ粒子量のバイスペクトル解析

    古閑一憲

    応用力学研究所共同研究報告会  2016.2 

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    Event date: 2016.2

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学応用力学研究所   Country:Japan  

  • 大気圧非平衡プラズマの基礎 (招待講演) Invited

    古閑一憲

    プラズマ・核融合学会第28回専門講習会「プラズマ医療の現状と展望」  2016.1 

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    Event date: 2016.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • Potential fluctuation evaluation using binary collision of fine particles suspended in plasmas (Invited) Invited

    K. Koga and M. Shiratani

    第16回微粒子プラズマ研究会  2015.12 

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    Event date: 2015.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:核融合科学研究所   Country:Japan  

  • 液中プラズマを用いたAuとPtナノ粒子の簡易作製法

    古閑一憲, 天野孝昭, Thapanut Sarinont, 徐鉉雄, 板垣奈穂, 白谷正治, 中津可道, 平田美由紀, 田中昭代

    平成27年度応用物理学会九州支部学術講演会  2015.12 

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    Event date: 2015.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:琉球大学   Country:Japan  

  • プラズマ中のクーロン衝突微粒子間引力

    古閑一憲, 添島雅大, 伊東鉄平, 山下大輔, 徐鉉雄, 板垣奈穂, 白谷正治, 野口将之, 内田誠一

    第32回プラズマ・核融合学会 年会  2015.11 

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    Event date: 2015.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  • 新しいプラズマプロセス技術を用いた薄膜堆積

    古閑一憲, 田浪荘汰, 山下大輔, 徐鉉雄, 板垣奈穂, 白谷正治

    接合科学共同利用・共同研究拠点 大阪大学接合科学研究所 平成27年度 共同研究成果発表会  2015.11 

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    Event date: 2015.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪大学接合科学研究所   Country:Japan  

  • Effects of Ion Energy on Chemical Bond Configuration in a-C:H Deposited using Ar + H2+ C7H8 Plasma CVD International conference

    K. Koga, X. Dong, K. Yamaki, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, K. Takenaka, Y. Setsuhara

    37th International Symposium on Dry Process (DPS2015)  2015.11 

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    Event date: 2015.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Awaji Yumebutai International Conference Center   Country:Japan  

  • Interactions between spin trapping reagents and non-thermal air DBD plasmas International conference

    K. Koga, T. Amano, T. Sarinont, T. Kondo, S. Kitazaki, Y. Nakatsu, A. Tanaka, M. Shiratani

    37th International Symposium on Dry Process (DPS2015)  2015.11 

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    Event date: 2015.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Awaji Yumebutai International Conference Center   Country:Japan  

  • プラズマ照射に対する生体応答の研究

    古閑一憲

    第31回 九州・山口プラズマ研究会  2015.11 

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    Event date: 2015.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:COCOLAND SPORTS&RESORT, 山口   Country:Japan  

  • Improving of Harvest Period and Crop Yield of Arabidopsis Thaliana L. using Nonthermal Atmospheric Air Plasma International conference

    K. Koga, T. Sarinont, T. Amano, H. Seo, N. Itagaki, M. Shiratani

    American Vacuum Society 62nd International Symposium and Exhibition (AVS)  2015.10 

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    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:SanJose, California   Country:Other  

  • Two Dimentional Visualization of Oxidation Effect of Scalable DBD Plasma Irradiation using KI-starch Solution International conference

    K. Koga, T. Amano, T. Sarinont, T. Kawasaki, G. Uchida, H. Seo, N. Itagaki, M. Shiratani, Y. Nakatsu, A. Tanaka

    American Vacuum Society 62nd International Symposium and Exhibition (AVS)  2015.10 

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    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:SanJose, California   Country:Other  

  • Simple Evaluation Method of Atmospheric Plasma Irradiation Dose using pH of Water International conference

    K. Koga, T. Sarinont, T. Amano, H. Seo, N. Itagaki, Y. Nakatsu, A. Tanaka, M. Shiratani

    ICRP9/GEC68/SPP33  2015.10 

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    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hawaii Convention Center   Country:Other  

  • In vivo kinetics of nanoparticles synthesized by plasma in water (Invited) Invited International conference

    K. Koga, T. Amano, M. Hirata, A. Tanaka, M. Shiratani

    The 21st Korea-Japan Workshop on Advanced Plasma Processes and Diagnostics & The Workshop for NU-SKKU Joint Institute for Plasma-Nano Materials  2015.10 

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    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yangyang   Country:Korea, Republic of  

  • In-situ laser Raman spectroscopy of an optically trapped fine particle International conference

    K. Koga, M. Soejima, K. Tomita, T. Ito, H. Seo, N. Itagaki, M. Shiratani

    17th International Symposium on Laser-Aided Plasma Diagnostics (LAPD17)  2015.9 

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    Event date: 2015.9 - 2015.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Chateraise Gateaux Kingdom Sapporo   Country:Japan  

  • Control Of Nanoprticle Transport And Their Deposition For Porous Low-k Films By Using Plasma Pertubation (Invited) Invited International conference

    K. Koga and M. Shiratani

    The 10th Asian-European International Conference on Plasma Surface Engineering (AEPSE2015)  2015.9 

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    Event date: 2015.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ramada Plaza Jeju Hotel   Country:Korea, Republic of  

  • アルゴンプラズマ中微粒子運動の画像解析によるプラズマパラメータ評価

    古閑一憲, 添島雅大, 徐鉉雄, 板垣奈穂, 白谷正治, 内田誠一

    日本物理学会 2015年秋季大会  2015.9 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:関西大学   Country:Japan  

  • 反応性プラズマ中ナノ粒子とラジカルの非線形結合成分の時空間解析

    古閑一憲, 伊東鉄平, 徐鉉雄, 板垣奈穂, 白谷正治

    日本物理学会 2015年秋季大会  2015.9 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:関西大学   Country:Japan  

  • 大気圧非平衡プラズマ照射による液中ラジカル生成の相関解析(招待講演) Invited

    古閑一憲

    新学術領域研究 プラズマ・ナノマテリアル動態学の創成と安全安心医療科学の構築 第21回医工連携ゼミ  2015.4 

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    Event date: 2015.4

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • 非平衡プラズマスパッタリングによる高速低温層交換結晶成長

    古閑一憲, 市田大樹, 山下大輔, 徐鉉雄, 板垣奈穂, 白谷正治

    日本物理学会第70回年次大会  2015.3 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  • ラットに皮下投与したInナノ粒子の体内輸送

    古閑一憲, 天野孝昭, 平田美由紀, 田中昭代, 白谷正治

    第62回応用物理学会春季学術講演会  2015.3 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  • 水素化アモルファスシリコン薄膜中Si-H2結合生成に対するクラスタ混入とラジカル表面反応の寄与

    古閑一憲, 都甲将, 鳥越祥宏, 毛屋公孝, 徐鉉雄, 板垣奈穂, 白谷 正治

    第62回応用物理学会春季学術講演会  2015.3 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  • スパッタを用いた低温高速層交換Ge結晶成長に対する基板温度の効果

    古閑一憲, 市田大樹, 橋本慎史, 徐鉉雄, 山下大輔, 板垣奈穂, 白谷正治

    第62回応用物理学会春季学術講演会  2015.3 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  • プロセシングプラズマを用いたIV族半導体ナノ粒子の作製と太陽電池への応用(招待講演) Invited

    古閑一憲, 内田儀一郎, 徐鉉雄, 白谷正治

    平成26年度 東北大学電気通信研究所共同プロジェクト研究会「プラズマナノバイオ・医療の基礎研究」  2015.2 

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    Event date: 2015.2

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東北大学   Country:Japan  

  • Temporal development of nonlinear coupling between radicals and nanoparticles in reactive plasmas (Invited) Invited International conference

    K. Koga, T. Ito, H. Seo, N. Itagaki, and M. Shiratani

    The 75th IUVSTA Workshop on Sheath Phenomena in Plasma Processing of Advanced Materials  2015.1 

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    Event date: 2015.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hotel Raj, Cerkljena Gorenjskem   Country:Slovenia  

  • Cluster suppressed deposition of a-Si:H films by employing non-linear phenomena in reactive plasmas (Invited) Invited International conference

    K. Koga, S. Toko, Y. Torigoe, K. Keya, H. Seo, N. Itagaki, M. Shiratani

    2015 Japan-Korea Joint Symposium on Advanced Solar Cells  2015.1 

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    Event date: 2015.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:TKP HAKATAEKIMAE Meeting Room, Fukuoka   Country:Japan  

  • 大気圧空気プラズマを照射したカイコの成長

    古閑一憲, サリノントタパナット, 天野孝昭, 白谷正治

    第24回日本MRS年次大会  2014.12 

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    Event date: 2014.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜市開港記念会館   Country:Japan  

  • プラズマ技術の生体・環境分野への応用研究

    古閑一憲

    九州大学テクノロジーフォーラム2014  2014.12 

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    Event date: 2014.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京国際フォーラム   Country:Japan  

  • プラズマ照射によるシロイヌナズナの植物成長促進の世代間伝搬

    古閑一憲, サリノントタパナット, 北﨑訓, 林信哉, 白谷正治

    第30回 九州・山口プラズマ研究会  2014.11 

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    Event date: 2014.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:ラグナガーデンホテル、沖縄   Country:Japan  

  • Analysis of coupling between nanoparticles and radicals using perturbation of radical density in reactive plasmas International conference

    K. Koga, T. Ito, H. Seo, N. Itagaki, M. Shiratani

    Plasma Conference 2014  2014.11 

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    Event date: 2014.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Toki Messe, Niigata   Country:Japan  

  • Effects of amplitude modulated VHF discharge on coupling between plasmas and nanoparticles International conference

    K. Koga, T. Ito, K. Kamataki, H. Seo, N. Itagaki, and M. Shiratani

    24th International Toki Conference  2014.11 

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    Event date: 2014.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ceratopia Toki, Toki-city, Gifu   Country:Japan  

  • Spatiotemporal Analysis of Nanoparticle Growth in Amplitude Modulated Reactive Plasmas for Understanding Interactions between Plasmas and Nanomaterials (Invited) Invited International conference

    K. Koga, Y. Morita, T. Ito, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani

    15th IUMRS-International Conference in Asia  2014.8 

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    Event date: 2014.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka University   Country:Japan  

  • 太陽電池開発の最前線

    古閑一憲

    2014年度先端サマーセミナー(第6回研究活動交流会)  2014.8 

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    Event date: 2014.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • Quartz crystal microbalance measurements for in-situ evaluation of dust inventory in fusion devices International conference

    K. Koga, M. Tateishi, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, and the LHD Experimental Group

    26th Symposium on Plasma Physics and Technology  2014.6 

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    Event date: 2014.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Czech Technical University, Prague   Country:Other  

  • Real time mass measurement of dust particles deposited on vessel wall using quartz crystal microbalances in a divertor simulator International conference

    K. Koga, M. Tateishi, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, and the LHD Experimental Group

    21th International Conference on Plasma Surface Interactions (PSI2014)  2014.5 

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    Event date: 2014.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ishikawa Ongakudo, Kanazawa   Country:Japan  

  • Effects of non-thermal air plasma irradiation to plant seeds on glucose concentration of plants International conference

    K. Koga, T. Sarinont, T. Amano, and M. Shiratani

    International Workshop on Diagnostics and Modelling for Plasma Medicine (DMPM2014)  2014.5 

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    Event date: 2014.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nara Prefectural New Public Hall, Nara   Country:Japan  

  • コンビナトリアル細胞活性解析を用いた細胞超活性プラズマの創成 (招待講演) Invited

    古閑一憲

    第8回レーザー学会「レーザーバイオ医療」技術専門委員会  2014.3 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:沖縄科学技術大学院大学   Country:Japan  

  • プラズマプロセス技術の最近の応用展開 (招待講演) Invited

    古閑一憲

    プラズマ・核融合学会九州・沖縄・山口支部 平成25年度第3回特別講演会  2014.2 

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    Event date: 2014.2

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:佐世保工業高等専門学校   Country:Japan  

  • Coupling between radicals in plasmas and nanoparticle growth in initial growth phase in reactive plasmas with amplitude modulation International conference

    K. Koga, Y. Morita, K. Kamataki, D. Yamashita, N. Itagaki, G. Uchida and M. Shiratani

    18th Korea - Japan Workshop on Advanced Plasma Processes and Diagnostics  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:NISHIJIN PLAZA, Fukuoka   Country:Japan  

  • Fabrication of highly stable a-Si:H solar cells by suppressing cluster incorporation (Invited) Invited International conference

    K. Koga, Y. Hashimoto, S. Toko, D. Yamashita, Y. Torigoe, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, and M. Shiratani

    2014 Japan-Korea Joint Symposium on Advanced Solar Cells  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:NISHIJIN PLAZA, Fukuoka   Country:Japan  

  • Coupling between radicals and nanoparticles in initial growth phase in reactive plasmas with amplitude modulation (Invited) Invited International conference

    K. Koga, Y. Morita, K. Kamataki, D. Yamashita, N. Itagaki, G. Uchida, M. Shiratani

    8th International Conference on Reactive Plasmas and 31st Symposium on Plasma Processing (ICRP-8/SPP-31)  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Multi-generation evaluation of plasma growth enhancement to arabidopsis thaliana (Invited) Invited International conference

    K. Koga, T. Sarinont, S. Kitazaki, N. Hayashi, M. Shiratani

    8th International Conference on Reactive Plasmas and 31st Symposium on Plasma Processing (ICRP-8/SPP-31)  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • プラズマ技術およびその応用可能性について (招待講演) Invited

    古閑一憲

    平成25年度次世代テクノロジーセミナー  2014.1 

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    Event date: 2014.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:リファレンス駅東ビル, 福岡   Country:Japan  

  • Correlation between Plasma Fluctuation and Nanoparticle Amount in Initial Growth Phase in Reactive Plasmas with Amplitude Modulation

    K. Koga, Y. Morita, K. Kamataki, D. Yamashita, N. Itagaki, G. Uchida, M. Shiratani

    14th Workshop on Fine Particle Plasmas  2013.12 

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    Event date: 2013.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:National Institute for Fusion Science, Toki   Country:Japan  

  • Quantum dot sensitized solar cells using group IV semiconductor nanoparticles (Invited) Invited International conference

    K. Koga, G. Uchida, D. Ichida, S. Hashimoto, H. Seo, K. Kamataki, N. Itagaki, and M. Shiratani

    2013 EMN Fall Meeting  2013.12 

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    Event date: 2013.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Orland, Florida   Country:Other  

  • ナノ粒子成長に対するプラズマ摂動周波数の効果

    古閑一憲, 森田康彦, 岩下伸也, 内田儀一郎, 鎌滝晋礼, 板垣奈穂, 白谷正治

    プラズマ・核融合学会 第30回年会  2013.12 

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    Event date: 2013.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  • Deposition of Ge Nanoparticle Films and Their Application to Ge Quantum-dot Sensitized Solar Cells International conference

    K. Koga, G. Uchida, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, M. Shiratani

    The 23rd International Photovoltaic Science and Engineering Conference  2013.11 

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    Event date: 2013.10 - 2013.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Taipei International Convention Center   Country:Taiwan, Province of China  

  • Carbon Nanostructure formed by high pressure methane plasmas

    K. Koga, S. Iwashita, G. Uchida, D. Yamashita, H. Seo, K. Kamataki, N. Itagaki, M. Shiratani, U. Czarnetzki

    The 26th Symposium on Plasma Science for Materials (SPSM-26)  2013.9 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Centennial Hall Kyushu University School of Medicine   Country:Japan  

  • Comparative Acute Pulmonary Toxicity of Different Types of Indium-Tin Oxide Following Intermittent Intratracheal Instillation to the Lung of Rats International conference

    K. Koga, A. Tanaka, M. Hirata, N. Hayashi, N. Itagaki and G. Uchida

    2013 JSAP-MRS Joint Symposia  2013.9 

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    Event date: 2013.9

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Doshisha University   Country:Japan  

  • クラスタ抑制法を用いた高光安定アモルファスシリコンPIN太陽電池の作製

    古閑一憲, 橋本優史, 金淵元, 都甲将, 内田儀一郎, 徐鉉雄, 板垣奈穂, 白谷正治

    プラズマ研究会  2013.9 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:長崎大学   Country:Japan  

  • Formation of self-organized nanostructures using high pressure CH4+Ar plasmas International conference

    K. Koga, S. Iwashita, G. Uchida, D. Yamashita, N. Itagaki, H. Seo, M. Shiratani and U. Czarnetzki

    The 9th Asian-European International Conference on Plasma Surface Engineering (AEPSE2013)  2013.8 

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    Event date: 2013.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ramada Plaza Jeju Hotel   Country:Korea, Republic of  

  • High Pressure Nonthermal Methane Plasmas for Nanoparticle Production International conference

    K. Koga, S. Iwashita, G. Uchida, D. Yamashita, N. Itagaki, K. Kamataki, M. Shiratani, U. Czarnetzki

    The 12th Asia Pacific Physics Conference (APPC12)  2013.7 

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    Event date: 2013.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Makuhari, Chiba   Country:Japan  

  • 振幅変調放電プラズマ中のナノ粒子成長初期におけるナノ粒子量の時空間分布

    古閑一憲, 森田康彦, 内田儀一郎, 鎌滝晋礼, 徐鉉雄, 板垣奈穂, 白谷正治

    2013年第60回応用物理学会春季学術講演会  2013.3 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  • Characteristics of high pressure Ar+CH4 nanosecond discharge plasmas for producing nanoparticles International conference

    K. Koga, D. Yamashita, G. Uchida, M. Shiratani, U. Czarnetzki

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)  2013.2 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Naogya University   Country:Japan  

  • Single particle trapping in plasmas using laser for studying interaction between a fine particle and palsams International conference

    K. Koga, D. Yamashita, G. Uchida, M. Shiratani

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)  2013.1 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Naogya University   Country:Japan  

  • Time and space profiles of laser-light scattering intensity from nano-particles and optical emission intensity in amplitude modurated high frequency discharge plasmas International conference

    K. Koga

    The International LIGLR Workshop on Plasma Science & Technology  2013.1 

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    Event date: 2013.1

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Kyushu University   Country:Japan  

  • プラズマ-壁相互作用によるナノ粒子生成に対する壁へのプラズマ流入角度の効果

    古閑一憲, 西山雄士, 立石瑞樹, 白谷正治, H. Wulff, S. Bornholdt, H. Kersten

    第30回プラズマプロセシング研究会(SPP-30)  2013.1 

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    Event date: 2013.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:アクトシティ浜松・研修交流センター   Country:Japan  

  • 重水素ヘリコンプラズマとグラファイト壁の相互作用により発生したダストの捕集

    古閑一憲, 岩下伸也, 西山雄士, 立石瑞樹, 森田康彦, 山下大輔, 鎌滝晋礼, 内田儀一郎, 徐鉉雄, 板垣奈穂, 白谷正治, 芦川直子, 増崎貴, 西村清彦, 相良明男, LHD実験グループ

    プラズマ・核融合学会 九州・沖縄・山口支部第16回支部大会  2012.12 

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    Event date: 2012.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • Deposition of Si nanoparticle composite films for C-Si/Si QDs/organic Solar Cells

    K. Koga, Y. Wang, D. Ichida, H. Seo, G. Uchida, N. Itagaki, M. Shiratani

    第13回微粒子プラズマ研究会  2012.12 

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    Event date: 2012.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:核融合科学研究所   Country:Japan  

  • グラファイトと重水素プラズマの相互作用で発生したダスト捕集

    古閑一憲, 岩下伸也, 西山雄士, 山下大輔, 鎌滝晋礼, 内田儀一郎, 徐鉉雄, 板垣奈穂, 白谷正治, 芦川直子, 増崎貴, 西村清彦, 相良明男, LHD実験グループ

    プラズマ・核融合学会 第29回年会  2012.11 

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    Event date: 2012.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:春日クローバープラザ   Country:Japan  

  • 高気圧Ar+CH4ナノ秒放電を用いた薄膜堆積とナノ粒子生成

    古閑一憲, 岩下伸也, 山下大輔, 内田儀一郎, 白谷正治, Czarnetzki U.

    プラズマ・核融合学会 第29回年会  2012.11 

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    Event date: 2012.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:春日クローバープラザ   Country:Japan  

  • Plasma Chemical Vapor Deposition for Solar Cells (Invited) Invited International conference

    K. Koga

    2012 Workshop on Advanced Surface and Material Technologies  2012.11 

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    Event date: 2012.11

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Ming Chi University of Technology   Country:Taiwan, Province of China  

  • Electrical Asymmetry Effectを用いた微粒子のシース間輸送

    古閑一憲, 岩下伸也, 内田儀一郎, J. Schulze, E. Schungel, P. Hartmann, 白谷正治, Z. Donko, U. Czarnetzki

    九州山口プラズマ研究会、応物新領域研究会  2012.11 

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    Event date: 2012.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:由布院倶楽部   Country:Japan  

  • Control of Dust Flux in LHD and in a Divertor Simulator International conference

    K. Koga, K. Nishiyama, Y. Morita, D. Yamashita, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, the LHD Experimental Group

    24th Fusion Energy Conference (IAEA)  2012.10 

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:San Diego   Country:Other  

  • Formation of Nanoparticles in High Pressure Reactive Nanosecond Discharges International conference

    K. Koga, S. Iwashita, M. Shiratani, U. Czarnetzki

    Asia-Pacific Conference on Plasma Science and Technology (11th APCPST)  2012.10 

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:京都大学   Country:Japan  

  • Optical Trapping of Single Fine Particle in Plasmas for study of interactions between a fine particle and plasmas International conference

    K. Koga, D. Yamashita, S. Kitazaki, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani

    NANOSMAT 2012  2012.9 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Aqua Palace Hotel   Country:Other  

  • Control of deposition profile and properties of plasma CVD carbon films International conference

    K. Koga, T. Urakawa, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    13th International Conference on Plasma Surface Engineering (PSE2012)  2012.9 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Garmisch-Partenkirchen   Country:Germany  

  • Effects of Substrate DC Bias Voltage on Dust Collection Efficiency in Large Helical Device International conference

    K. Koga, K. Nishiyama, Y. Morita, D. Yamashita, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, the LHD Experimental Group

    20th International Conference on Plasma Surface Interactions 2012 (PSI2012)  2012.5 

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    Event date: 2012.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Eurogress Aachen   Country:Germany  

  • Effects of incorporation of clusters generated in the plasma ignition phase on Schottky cell performance of amorphous silicon films International conference

    K. Koga, K. Nakahara, K. Hatozaki, Y. Hashimoto, T. Matsunaga, H. Seo, G. Uchida, N. Itagaki, M. Shiratani

    The Fourth International Workshop on Thin-Film Silicon Solar Cells (IWTFSSC-4)  2012.3 

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    Event date: 2012.3

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Hotel Beaulac   Country:Switzerland  

  • Three growth modes of nanoparticles generated in reactive plasmas International conference

    K. Koga, K. Kamataki, S. Nunomura, S. Iwashita, G. Uchida, H. Seo, N. Itagaki, M. Shiratani, U. Czarnetzki

    DPG Spring Meeting of the Section AMOP (SAMOP)  2012.3 

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    Event date: 2012.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:University of Stuttgart   Country:Germany  

  • 低温プラズマ異方性CVDを用いた微細トレンチ上面への自己組織カーボンマスク形成 International conference

    古閑一憲, 浦川達也, 内田儀一郎, 徐鉉雄, 鎌滝晋礼, 板垣奈穂, 白谷正治, 節原裕一, 関根誠, 堀勝

    Plasma Conference 2011 (PLASMA2011)  2011.11 

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    Event date: 2011.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:石川県立音楽堂   Country:Japan  

  • プロセスプラズマ中の微粒子挙動研究とその応用(特別講演) Invited

    古閑一憲

    プラズマ科学のフロンティア2011研究会  2011.9 

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    Event date: 2011.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:核融合科学研究所, 岐阜   Country:Japan  

  • CVDプラズマ中ナノ粒子の制御とその応用 (招待講演) Invited

    古閑一憲

    AIST計測・診断システム研究協議会 第8回プラズマ技術研究会  2011.8 

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    Event date: 2011.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:虹の松原ホテル, 佐賀   Country:Japan  

  • 基板バイアスによるダスト捕集の検討

    古閑一憲

    第9回LHDにおけるPWI共同研究・検討会  2011.7 

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    Event date: 2011.7

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:核融合科学研究所, 岐阜   Country:Japan  

  • Effects of surface treatment on performance of Si nano-particle quantum dot solar cells International conference

    K. Koga, G. Uchida, M. Sato, Y. Wang, K. Nakahara, K. Kamataki, N. Itagaki, M. Shiratani

    The 3rd International Conference on Microelectronics and Plasma Technology (ICMAP-2011)  2011.7 

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    Event date: 2011.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Furama Hotel, Dalian   Country:China  

  • Deposition of carbon films on top surface of fine trenches at 100℃ using a plasma anisotropic CVD method

    古閑一憲, 野村卓也, 浦川達也, 内田儀一郎, 鎌滝晋礼, 板垣奈穂, 白谷正治, 節原裕一, 関根誠, 堀勝

    第58回応用物理学関係連合講演会  2011.3 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  • Transport Control of Carbon Nanoparticles in H2 Helicon Discharges by Biasing Wall

    古閑一憲, 西山雄士, 白谷正治

    NIFSダスト研「次世代核融合装置に向けたダスト問題に関する研究会」  2011.3 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:核融合科学研究所, 岐阜   Country:Japan  

  • Generation and Surface Modification of Si nano-particles using SiH4/H2 and N2 multi-hollow discharges and their application to the third generation photovoltaics (Invited) Invited International conference

    K. Koga, G. Uchida, K. Yamamoto, Y. Kawashima, M. Sato, K. Kamataki, N. Itagaki, M. Shiratani

    International Conference on Advances in Condensed and Nano Materials-2011(ICACNM-2011)  2011.2 

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    Event date: 2011.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Panjab University   Country:India  

  • Radical flux evaluation of high pressure silane plasma CVD using multi-hollow discharges (Invited) Invited International conference

    K. Koga, T. Matsunaga, Y. Kawashima, Y. Kim, K. Nakahara, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani

    The 12th International Workshop on Advanced Plasma Processing and Diagnostics  2011.1 

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    Event date: 2011.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:九州大学医学部百年記念講堂   Country:Japan  

  • 微細パターン基板へのSiOx-CH3ナノ粒子堆積

    古閑一憲, 宮田大嗣, 西山雄士, 岩下伸也, 山下大輔, 松崎秀文, 内田儀一郎, 板垣奈穂, 鎌滝晋礼, 白谷正治

    第27回プラズマ・核融合学会年会  2010.12 

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    Event date: 2010.11 - 2010.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:札幌国際プラザ   Country:Japan  

  • プラズマ-カーボン壁相互作用で発生したカーボン微粒子の基板へのフラックス評価

    古閑一憲, 宮田大嗣, 西山雄士, 岩下伸也, 山下大輔, 松崎秀文, 内田儀一郎, 板垣奈穂, 鎌滝晋礼, 白谷正治, 芦川直子, 増﨑貴, 西村清彦, 相良明男, LHD実験グループ

    第27回プラズマ・核融合学会年会  2010.11 

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    Event date: 2010.11 - 2010.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:札幌国際プラザ   Country:Japan  

  • Deposition profile control of carbon films on the surface of fine structures using plasma CVD (Invited) Invited International conference

    K. Koga, T. Nomura, G. Uchida, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    The 1st Korean-Japan Symposium on Surface Technology  2010.11 

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    Event date: 2010.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Premier Songdo Park Hotel, Inchon, Korea   Country:Korea, Republic of  

  • Deposition of Nanoparticles using Substrate Bias Voltage International conference

    K. Koga, H. Miyata, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani, N. Ashikawa, K. Nishimura, A. Sagara, the LHD Experimental Group

    第23回マイクロプロセス・ナノテクノロジー国際会議(MNC 2010)  2010.11 

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    Event date: 2010.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:リーガロイヤルホテル小倉   Country:Japan  

  • プラズマ-細胞相互作用による細胞活性制御

    古閑一憲, 北﨑訓, 内田儀一郎, 鎌滝晋礼, 板垣奈穂, 白谷正治

    第26回九州・山口プラズマ研究会  2010.11 

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    Event date: 2010.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:山陽館, 大分   Country:Japan  

  • High speed deposition of highly stable a-Si:H films using pure silane multi-hollow discharges International conference

    K. Koga, K. Nakahara, T. Matsunaga, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani

    Third International Workshop on Thin Film Silicon Solar Cells (IWTFSSC3)  2010.10 

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    Event date: 2010.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:長崎全日空ホテル   Country:Japan  

  • Si quantum dot-sensitized solar cells using Si nanoparticles produced by multi-hollow discharge International conference

    K. Koga, G. Uchida, Y. Kawashima, M. Sato, K. Yamamoto, K. Nakahara, T. Matsunaga, K. Kamataki, N. Itagaki, M. Shiratani

    3rd International Symposium on Innovative Solar Cells  2010.10 

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    Event date: 2010.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  • Comparison between Si thin films with and without incorporating nanoparticles into the film International conference

    K. Koga, Y. Kawashima, T. Matsunaga, M. Sato, K. Nakahara, W. M. Nakamura, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani

    10th Asia Pacific Conference on Plasma Science and Technology (APCPST)  2010.7 

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    Event date: 2010.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Jeju island   Country:Korea, Republic of  

  • Effects of hydrogen dilution on electron density in multi-hollow discharges with magnetic field for a-Si:H film deposition International conference

    K. Koga, Y. Kawashima, K. Nakahara, T. Matsunaga, W. M. Nakamura, M. Shiratani

    35th IEEE Photovoltaic Specialists Conference (PVSC)  2010.6 

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    Event date: 2010.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Honolulu, Hawaii   Country:Other  

  • へリコンプラズマーカーボン壁相互作用で発生したカーボンダストの電場による収集

    古閑一憲, 宮田大嗣, 白谷正治

    第8回LHDにおけるPWI共同研究・検討会  2010.6 

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    Event date: 2010.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:核融合科学研究所, 岐阜   Country:Japan  

  • Plasma CVD for Si thin film solar cells International conference

    K. Koga

    2010 International Workshop on Plasma Applications  2010.6 

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    Event date: 2010.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • 振幅変調パルス放電による部分帯電ナノ粒子雲の輸送

    K. Koga, S. Iwashita, H. Miyata, M. Shiratani

    日本地球惑星科学連合年会  2010.5 

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    Event date: 2010.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:千葉幕張メッセ国際会議場   Country:Japan  

  • Effects of gas residence time and H2 dilution on electron density in multi-hollow discharges of SiH4+ H2

    K. Koga, H. Sato, Y. Kawashima, W. M. Nakamura, M. Shiratani

    第27回プラズマプロセシング研究会(SPP-27)  2010.2 

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    Event date: 2010.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:横浜市開港記念会館,   Country:Japan  

  • LHDの第一壁へのダストフラックスの評価

    古閑一憲, 岩下伸也, 宮田大嗣, 山田泰之, 白谷正治, 芦川直子, 増崎貴, 西村清彦, 相良明男, LHD実験グループ

    第2回PWI合同研究会  2009.12 

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    Event date: 2009.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:核融合科学研究所, 岐阜   Country:Japan  

  • シランホロ―放電に対する水素希釈の効果

    古閑一憲, 佐藤宙, 中村ウィリアム誠, 宮原弘臣, 松崎秀文, 白谷正治

    プラズマ・核融合学会 九州・沖縄・山口支部 第12回支部大会  2009.12 

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    Event date: 2009.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • マルチホロ―放電を用いたa-Si:H製膜中の基板温度

    古閑一憲, 川嶋勇毅, 佐藤宙, 白谷正治

    19th Academic Symposium of MRS-Japan 2009  2009.12 

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    Event date: 2009.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜   Country:Japan  

  • High Rate Deposition of Cluster-suppressed Amorphous Silicon Films Deposited Using a Multi-hollow Discharge Plasma CVD International conference

    K. Koga, H. Sato, Y. Kawashima, M. Shiratani

    2009 MRS Fall Meeting  2009.12 

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    Event date: 2009.11 - 2009.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston   Country:Other  

  • Plasma Treatment of Indium Compounds to Reduce Their Adverse Health Effects International conference

    K. Koga, S. Iwashita, H. Miyata, M. Shiratani, M. Hirata, Y. Kiyohara, A. Tanaka

    2009 MRS Fall Meeting  2009.12 

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    Event date: 2009.11 - 2009.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston   Country:Other  

  • Synthesis of crystalline Si nanoparticles for third generation solar cells (Invited) Invited International conference

    K. Koga, Y. Kawashima, K. Nakahara, H. Sato, M. Shiratani, M. Kondo

    10th Workshop on Fine Particle Plasmas  2009.11 

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    Event date: 2009.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:核融合科学研究所, 岐阜   Country:Japan  

  • Plasma treatment of CIGS to reduce toxicity International conference

    K. Koga, S. Iwashita, H. Miyata, M. Shiratani, M. Hirata, Y. Kiyohara, A. Tanaka

    Seventh Asian-European International Conference on Plasma Surface Engineering (AEPSE 2009)  2009.9 

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    Event date: 2009.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:BEXCO Convention center, Busan   Country:Korea, Republic of  

  • マイクロ波共振プローブを用いたH2+SiH4マルチホロー放電の電子密度計測

    古閑一憲, 佐藤 宙, 川嶋勇毅, 白谷正治

    第70回応用物理学会学術講演会  2009.9 

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    Event date: 2009.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:富山大学   Country:Japan  

  • プラズマCVDを用いた微細構造への製膜形状制御(招待講演) Invited

    古閑一憲, 白谷正治

    西日本放電懇談会  2009.8 

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    Event date: 2009.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:ホテル万松楼, 長崎   Country:Japan  

  • プラズマCVDの基礎 (Invited) Invited

    古閑一憲

    TEL University  2009.7 

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    Event date: 2009.7

    Language:Japanese   Presentation type:Public lecture, seminar, tutorial, course, or other speech  

    Venue:東京エレクトロン韮崎   Country:Japan  

  • LHDとモデル実験装置のダストの比較

    古閑一憲, 岩下伸也, 宮田大嗣, 白谷正治, 芦川直子, 増崎貴, 西村清彦, 相良明男, LHD実験グループ

    第7回LHDにおけるPWI共同研究・検討会  2009.6 

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    Event date: 2009.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:核融合科学研究所, 岐阜   Country:Japan  

  • 高品質光安定a-Si:H薄膜作製用マルチホロー放電における電子密度の空間分布

    古閑一憲, 佐藤宙, 川嶋勇毅, 中村誠ウィリアム, 白谷正治

    電気学会プラズマ研究会  2009.6 

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    Event date: 2009.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:佐賀大学   Country:Japan  

  • Anisotropic deposition in narrow trenches using hydrogen assisted plasma CVD method International conference

    K. Koga, T. Nomura, M. Shiratani, M. Sekine, Y. Setsuhara, M. Hori

    Memorial Symposium for the Retirement of Professor Tachibana “Toward the Next Generation of Plasma Science, Technology”  2009.5 

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    Event date: 2009.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto Univ.   Country:Japan  

  • Deposition profile control of carbon films in trenches using a plasma CVD method (Invited) Invited International conference

    K. Koga

    The 7th EU-Japan Joint Symposium on Plasma Processing  2009.4 

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    Event date: 2009.4

    Language:English   Presentation type:Oral presentation (general)  

    Venue:The Conference Center at Chteau Liblice   Country:Other  

  • 高品質a-Si堆積用マルチホロー放電プラズマ

    古閑一憲

    太陽電池製造用新規プラズマ源に関する研究会  2009.3 

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    Event date: 2009.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学西新プラザ   Country:Japan  

  • Conductivity of nc-Si films depsited using multi-hollow discharge plasma CVD method

    K. Koga, Y. Kawashima, W. M. Nakamura, H. Sato, M. Tanaka, M. Shiratani, M. Kondo

    プラズマ科学シンポジウム2009/第26回プラズマプロセシング研究会  2009.2 

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    Event date: 2009.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya University   Country:Japan  

  • High Rate Deposition of a-Si:H Depositied using a Low Gas Pressure Multi-hollow Discharge Plasma CVD Method

    K. Koga, W. M. Nakamura, H. Sato, M. Tanaka, H. Miyahara, M. Shiratani

    プラズマ科学シンポジウム2009/第26回プラズマプロセシング研究会  2009.2 

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    Event date: 2009.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya University   Country:Japan  

  • プラズマプロセスにおける揺らぎの抑制と増幅 (招待講演) Invited

    古閑一憲

    プラズマ・核融合学会「プラズマ-バイオ融合科学への新展開」第2回専門委員会  2009.1 

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    Event date: 2009.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東北大学   Country:Japan  

  • シランホロー放電に対する水素希釈の効果

    古閑一憲, 佐藤宙, 中村ウィリアム誠, 宮原弘臣, 松崎秀文, 白谷正治

    プラズマ・核融合学会 第12回九州・沖縄・山口支部大会  2008.12 

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    Event date: 2008.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • Dust Particles in Size Range from 1 nm to 10 μm Sampled in LHD International conference

    K. Koga, S. Iwashita, M. Shiratani, N. Ashikawa, K. Nishimura, A. Sagara, A. Komori, LHD Experimental Group

    9th Workshop on Fine Particle Plasmas  2008.12 

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    Event date: 2008.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:NIFS   Country:Japan  

  • Improvement in deposition rate of a-Si:H films using a low pressure multi-hollow discharge plasma CVD method International conference

    K. Koga, H. Sato, W. M. Nakamura, H. Miyahara, H. Matsuzaki, M. Shiratani

    ICPP2008 Satellite Meeting on Plasma Physics, Advanced Applications in Aso  2008.9 

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    Event date: 2008.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:熊本   Country:Japan  

  • 水素希釈シラン有磁場マルチホロー放電を用いた高光安定a-Si:H膜の堆積

    古閑一憲, 中村ウィリアム誠, 佐藤 宙, 宮原弘臣, 白谷正治

    2008年秋季第69回応用物理学会学術講演会  2008.9 

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    Event date: 2008.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:中部大学   Country:Japan  

  • プラズマCVDを用いたナノ粒子含有多孔質低誘電率膜の作製

    古閑一憲

    平成20年度西日本放電懇談会  2008.8 

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    Event date: 2008.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:門司港ホテル   Country:Japan  

  • Deposition of highly stable a-Si:H films using hydrogen diluted silane hollow discharge International conference

    K. Koga, H. Sato, W. M. Nakamura, H. Miyahara, H. Matsuzaki, M. Shiratani

    The 3rd International School of Advanced Plasma Technology  2008.7 

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    Event date: 2008.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Villa Monastero, Varenna   Country:Italy  

  • Nano-structure formation using Plasma (Invited) Invited

    K. Koga

    レノバセミナー  2008.4 

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    Event date: 2008.4

    Language:English   Presentation type:Oral presentation (general)  

    Venue:新宿ワシントンホテル 高尾2   Country:Japan  

  • Effects of hydrogen dilution on a-Si:H deposition using silane hollow discharges

    K. Koga, H. Sato, W. M. Nakamura, H. Miyahara, H. Matsuzaki, M. Shiratani

    第25回プラズマプロセシング研究会  2008.1 

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    Event date: 2008.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:山口県教育会館・ゆ~あいプラザ山口県社会福祉会館   Country:Japan  

  • Control of deposition profile of Cu in trenches using ion-enhanced surface reaction (Invited) Invited International conference

    K. Koga, M. Shiratani

    The 5th International Symposium on Advanced Plasma Processing, Diagnostics, The 1st International Symposium on Flexible Electronics Technology  2007.4 

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    Event date: 2007.4

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Seoul   Country:Korea, Republic of  

  • Cluster-suppressed plasma CVD method employing VHF discharges International conference

    K. Koga, M. Shiratani, Y. Watanabe

    Fine Particle Plasmas: Basis, Applications - Third Workshop on Fine Particle Plasmas  2002.12 

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    Event date: 2002.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • プラズマスパッタリングによるSiナノ構造の自己組織的形成

    古閑 一憲, 甲斐 幹英, 白谷 正治, 渡辺 征夫

    電気学会 プラズマ研究会  2002.12 

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    Event date: 2002.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Correlation between cluster amount, qualities of a-Si:H films for SiH4 plasma CVD International conference

    K. Koga, K. Imabeppu, M. Kai, A. Harikai, M. Shiratani, Y. Watanabe

    American Vaccum Society 49th International Symposium  2002.11 

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    Event date: 2002.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • クラスタ抑制プラズマCVD法を用いて堆積したa-Si:H膜の膜質に及ぼす放電周波数の影響

    古閑 一憲, 今別府 謙吾, 白谷 正治, 渡辺 征夫

    平成14年度応用物理学会九州支部講演会  2002.11 

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    Event date: 2002.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • クラスター抑制プラズマCVD法による高品質a-Si:H堆積

    古閑 一憲, 白谷 正治, 古閑 一憲, 渡辺 征夫

    第18回九州・山口プラズマ研究会  2002.11 

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    Event date: 2002.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • シラン高周波放電を用いたナノ結晶シリコンクラスタの生成

    古閑 一憲, 甲斐 幹英, 白谷 正治, 渡辺 征夫

    第62回応用物理学学術講演会  2002.9 

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    Event date: 2002.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • アモルファスシリコン作製になぜ放電周波数を高周波化するか?

    古閑 一憲, 白谷 正治, 渡辺 征夫

    西日本放電懇談会  2002.8 

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    Event date: 2002.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Carbon nano-particles due to interaction between H2 plasmas, carbon wall International conference

    K. Koga, R. Ueharaa, M. Shiratani, Y. Watanabe, A. Komori

    Joint Meeting of 16th European Conference on Atomic, Molecular Physics of Ionized Gases, 5th International Conference on Reactive Plasmas  2002.7 

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    Event date: 2002.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • Suppression methods of cluster growth in silane discharges, their application to deposition of super high quality a-Si:H films International conference

    K. Koga, K. Imabeppu, M. Kai, A. Harikai, M. Shiratani, Y. Watanabe

    International Workshop on Information, Electrical Engineering (IWIE2002)  2002.5 

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    Event date: 2002.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • クラスタ抑制PECVD法により作製したa-Si:H薄膜の膜質とクラスタ量の相関

    古閑 一憲, 甲斐 幹英, 今別府 謙吾, 白谷 正治, 渡辺 征夫

    第49回応用物理学関係連合講演会  2002.3 

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    Event date: 2002.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 水素プラズマとカーボン壁の相互作用による微粒子形成

    古閑 一憲, 上原 龍児, 白谷 正治, 渡辺 征夫, 小森 彰夫

    第49回応用物理学関係連合講演会  2002.3 

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    Event date: 2002.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • シランプラズマ中のクラスタ量と電子エネルギー分布への放電周波数の影響

    古閑 一憲, 針貝 篤史, 白谷 正治, 渡辺 征夫

    第49回応用物理学関係連合講演会  2002.3 

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    Event date: 2002.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • In situ mesurement of size, density of particles in sub-nm size range International conference

    K. Koga, M. Shiratani, Y. Watanabe

    Seminar of Particle Technology Division of Korean Chemical Engineering  2002.2 

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    Event date: 2002.2

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • In situ mesurement of size, density of particles in subnm size range (Invited) Invited

    K. Koga, M. Shiratani, Y. Watanabe

    The Seminar of Particle Technology Division of Korean Chemical Engineering  2002.2 

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    Event date: 2002.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Korea Institute of Energy Research, Daejeon   Country:Korea, Republic of  

  • Preliminary experiments on dust particles formation due to interaction between plasma, graphite wall International conference

    K. Koga, M. Shiratani, Y. Watanabe

    Fine Particle Plasmas: Basis, Applications - Second Workshop on Fine Particle Plasmas  2001.12 

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    Event date: 2001.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • LSI内微細銅配線形用プラズマCVD

    古閑 一憲, 白谷 正治, 古閑 一憲, 渡辺 征夫

    第17回九州・山口プラズマ研究会  2001.11 

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    Event date: 2001.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • ダイバータ壁とプラズマの相互作用による微粒子形成機構研究用装置の試作

    古閑 一憲, 徳安 達郎, 上原 龍児, 白谷 正治, 渡辺 征夫

    第18回プラズマ・核融合学会年会  2001.11 

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    Event date: 2001.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • シラン高周波放電中のクラスタ成長に関する水素希釈と励起周波数の効果

    古閑 一憲, 針貝 篤史, 白谷 正治, 渡辺 征夫, 渡邉 剛

    第62回応用物理学学術講演会  2001.9 

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    Event date: 2001.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Deposition of super high quality a-Si:H thin films using cluster-suppressed plasma CVD reactor International conference

    K. Koga, T. Sonoda, N. Shikatani, M. Shiratani, Y. Watanabe

    International Conference on Phenomena in Ionized Gases  2001.7 

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    Event date: 2001.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • クラスタ抑制プラズマCVD装置による高品質a-Si:H作製

    古閑 一憲, 園田 剛士, 鹿谷 昇, 白谷 正治, 渡辺 征夫

    第48回応用物理学関係連合講演会  2001.3 

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    Event date: 2001.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 水素希釈シラン高周波放電中の電子密度及びイオン密度

    古閑 一憲, 田中 健一, 白谷 正治, 渡辺 征夫

    第48回応用物理学関係連合講演会  2001.3 

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    Event date: 2001.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Effects of H2 dilution, excitation frequency on initial growth of clusters in silane plasmas International conference

    K. Koga, K. Tanaka, M. Shiratani, Y. Watanabe

    Plasma Science Symposium 2001/ 18th Symposium on Plasma Processing  2001.1 

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    Event date: 2001.1

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • シランプラズマ中に発生する微粒子の表面付着確率

    古閑 一憲, 徳安 達郎, 白谷 正治, 渡辺 征夫

    平成12年度応用物理学会九州支部講演会  2000.12 

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    Event date: 2000.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • シランプラズマ中のSinHxクラスタ核のその場計測と成長制御

    古閑 一憲, 田中 健一, 徳安 達郎, 白谷 正治, 渡辺 征夫

    プラズマ・核融合学会九州地区第4回研究発表講演会  2000.12 

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    Event date: 2000.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Initial growth of clusters in silane rf discharges International conference

    K. Koga, K. Tanaka, T. Tokuyasu, M. Shiratani, Y. Watanabe

    53rd Annual Gaseous Electronics Conference  2000.10 

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    Event date: 2000.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • シランプラズマ中のクラスタ成長に対する水素希釈・放電周波数の効果

    古閑 一憲, 田中 健一, 白谷 正治, 渡辺 征夫

    第61回応用物理学学術講演会  2000.9 

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    Event date: 2000.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • シラン高周波放電中クラスタの表面付着確率

    古閑 一憲, 徳安 達郎, 白谷 正治, 渡辺 征夫

    第61回応用物理学学術講演会  2000.9 

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    Event date: 2000.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • シラン高周波放電中のクラスタのサイズ・密度測定

    古閑 一憲, 松岡 泰弘, 田中 健一, 白谷 正治, 渡辺 征夫

    第47回応用物理学関係連合講演会  2000.3 

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    Event date: 2000.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • プラズマ中のクラスタの新計測法

    古閑 一憲, 松岡 泰弘, 田中 健一, 白谷 正治, 渡辺 征夫

    第17回プラズマプロセシング研究会  2000.1 

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    Event date: 2000.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • シランプラズマ中の微粒子成長の基板材料依存性

    古閑 一憲, 前田 真一, 白谷 正治, 渡辺 征夫

    平成11年度応用物理学会九州支部講演会  1999.12 

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    Event date: 1999.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 反応性プラズマにおける微粒子発生

    古閑 一憲, 前田 真一, 松岡 泰弘, 田中 健一, 白谷 正治, 渡辺 征夫

    プラズマ・核融合学会九州地区第3回研究発表講演会  1999.12 

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    Event date: 1999.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 水素希釈によるシラン高周波放電中微小微粒子の抑制効果

    古閑 一憲, 松岡 泰弘, 田中 健一, 白谷 正治, 渡辺 征夫

    第60回応用物理学学術講演会  1999.9 

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    Event date: 1999.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • シラン高周波放電における微小微粒子の抑制

    古閑 一憲

    西日本放電懇談会  1999.8 

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    Event date: 1999.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Characteristics of Asymmetric Ion Sheath in a Negative Ion Plasma International conference

    K. Koga, H. Naitou, Y. Kawai

    2nd International Conference on the Physics of Dusty Plasmas  1999.5 

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    Event date: 1999.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • イオンシース不安定性と非対称イオンシース構造

    古閑 一憲, 内藤 裕志, 河合 良信

    プラズマ・核融合学会九州地区第2回研究発表講演会  1999.2 

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    Event date: 1999.2

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • プラズマスパッタによる高移動度アモルファスITO成膜におけるハイブリッド機械学習モデル

    鎌滝晋礼, 板垣奈穂, 山下大輔, 奥村賢直, 山下尚人, 古閑一憲, 白谷正治

    第71回応用物理学会 春季学術講演会  2024.3 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都市大学   Country:Japan  

  • Large-Scale Fabrication of Tm3 Fe5 O12 Film with Perpendicular Magnetic Anisotropy Using Magnetron Sputtering International conference

    A. M. Nurut, S. Obinata, T. Okumura, K. Kamataki, K. Koga, N. Itagaki, M. Shiratani, N. Yamashita

    ISPlasma  2024.3 

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    Event date: 2024.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:東京都市大学   Country:Japan  

  • イネ種皮のプラズマ起因化学種透過性の二次元分布解析

    史合平, 奥村賢直, P. Attri, 山下大輔, 鎌滝晋礼, 山下尚人, 板垣奈穂, 古閑一憲, 白谷正治

    第71回応用物理学会 春季学術講演会  2024.3 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都市大学   Country:Japan  

  • プラズマ照射によるシロイヌナズナ種皮の物質透過性変化

    奥村賢直, 古閑一憲, アタリパンカジ, 山下大輔, 鎌滝晋礼, 山下尚人, 板垣奈穂, 白谷正治, 南原英司

    第71回応用物理学会 春季学術講演会  2024.3 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都市大学   Country:Japan  

  • モデル植物ゼニゴケを用いた低温プラズマ照射の初発反応と成長に対する影響の解析

    坪山祥子, 奥村賢直, 古閑一憲, 白谷正治, 朽津和幸

    第71回応用物理学会 春季学術講演会  2024.3 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都市大学   Country:Japan  

  • 大気圧プラズマを用いた窒素固定における電極温度の効果

    中尾匠, 奥村賢直, パンカジアタリ, 山下大輔, 鎌滝晋礼, 山下尚人, 板垣奈穂, 白谷正治, 古閑一憲

    第71回応用物理学会 春季学術講演会  2024.3 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都市大学   Country:Japan  

  • ソルガム種子への空気プラズマ照射による発芽・生育促進効果

    柳川由紀, 蒔田由布子, 奥村賢直, 藤田美紀, 栗山朋子, 河内正治, 松井南, 古閑一憲

    第71回応用物理学会 春季学術講演会  2024.3 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都市大学   Country:Japan  

  • プラズマを用いた CO2 のメタン化におけるモレキュラーシーブの活用

    都甲将, 奥村賢直, 鎌滝晋礼, 竹中弘祐, 古閑一憲, 白谷正治, 節原裕一

    第71回応用物理学会 春季学術講演会  2024.3 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都市大学   Country:Japan  

  • CxHy+ArプラズマCVDを用いた水素化アモルファスカーボン膜の堆積特性に対するガス圧力の効果

    小野晋次郎, 恵利眞人, 奥村賢直, 山下尚人, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    第71回応用物理学会 春季学術講演会  2024.3 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都市大学   Country:Japan  

  • Sputtering deposition of low resistive 30-nm-thick ZnO:Al films on seed layers grown via solid phase crystallization of fractionally crystallized ZnON films International conference

    Y. Wada, S. Zhiyuan, H. Yabuta, N. Yamashita, T. Okumura, K. Kamataki, H. Kiyama, K. Koga, M. Shiratani, N. Itagaki

    ISPlasma  2024.3 

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    Event date: 2024.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  • Deposition of carbon nanoparticles fabricated by multi-hollow discharge plasma CVD on DC biased substrates International conference

    K. Koga, S. Ono, M. Eri, S. H. Hwang, T. Okumura, K. Kamataki, N. Yamashita, N. Itagaki, M.Shiratani

    ISPlasma  2024.3 

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    Event date: 2024.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  • Molecular structure analysis of DBD plasma irradiated DMPO by LC-MS International conference

    T. Okumura, H. Shi, P.Attri, D. Yamasita, K. Kamataki, N.Yamasita, N. Itagaki, K. Koga, M. Shiratan

    ISPlasma  2024.3 

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    Event date: 2024.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  • Influence of CO and H2O2 in plasma agriculture International conference

    P. Attri, T. Okumura, K. Koga, K. Kamataki, M. Shiratani

    ISPlasma  2024.3 

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    Event date: 2024.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  • Nitrogen Fixation to Leaf Mold Using Air Plasma and Evaluation of Phenotype Response of Sugarcane to Nitrogen-Fixed Fertilizer International conference

    T.Nakao, T. Okumura, P. Attri, D. Yamashita, K. Kamataki, N. Yamashita, N. Itagaki, M. Shiratani, K. Koga

    ISPlasma  2024.3 

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    Event date: 2024.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  • プラネタリバウンダリに貢献するプラズマ農業(招待講演) Invited

    古閑一憲

    SPP-41  2024.1 

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    Event date: 2024.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  • プラズマスパッタによる高品質アモルファスITO薄膜形成のためのハイブリッド機械学習モデル Invited

    鎌滝晋礼,板垣 奈穂,山下 大輔, 奥村 賢直,山下 尚人, 古閑 一憲, 白谷 正治

    SPP-41  2024.1 

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    Event date: 2024.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  • Predictions for High Quality Amorphous ITO(In2O3:Sn) Film Formation via Hybrid Machine Learning Model Invited International conference

    K. Kamataki, N. Itagaki, D. Yamashita, T. Okumura, N. Yamashita, K. Koga, M. Shiratani

    ICTS  2024.1 

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    Event date: 2024.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:パラダイスホテル釜山   Country:Korea, Republic of  

  • Induction of plant responses by plasma irradiation to seeds and their quantitative evaluation Invited International conference

    T. Okumura, P. Attri, Y. Ishibashi, K.Koga, M. Shiratani

    ICTS  2024.1 

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    Event date: 2024.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:パラダイスホテル釜山   Country:Korea, Republic of  

  • Understanding Plant Molecular Response to Low-temperature Plasma Irradiation(Invited) Invited International conference

    K. Koga

    ICMAP2024  2024.1 

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    Event date: 2024.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Booyoung Hotel & Resort Jeju   Country:Korea, Republic of  

  • Effects of Carbon Nanoparticle Interposed between Two Hydrogenated Amorphous Carbon Films on Surface Morphology of a-C:H Film

    S. Ono, M. Eri, T. Okumura, K. Kamataki, N. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    第39回 九州・山口プラズマ研究会  2023.12 

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    Event date: 2023.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:国立京都国際会館   Country:Japan  

  • Enhancement of The Coercivity and Blocking Temperature of Co doped ZnO films by RF sputtering Using Nitrogen International conference

    M. N. Agusutrisno, K. Kamataki, T. Okumura, N. Itagaki, K. Koga, M. Shiratani, N. Yamashita

    MRM2023/IUMRS-ICA2023  2023.12 

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    Event date: 2023.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:国立京都国際会館   Country:Japan  

  • Evaluation of Elastic Parameters of a-C:H Film with Carbon Nanoparticles Using Nanoindentation Method International conference

    K. Koga, S. Ono, M. Eri, T. Okumura, K. Kamataki, N. Yamashita, N. Itagaki, M. Shiratani

    MRM2023/IUMRS-ICA2023  2023.12 

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    Event date: 2023.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:国立京都国際会館   Country:Japan  

  • Hybrid machine learning model prediction for high mobility amorphous ITO films fabricated by RF plasma sputtering International conference

    K. Kamataki, N. Itagaki, D. Yamashita, T. Okumura, N. Yamashita, K. Koga, M. Shiratani

    MRM2023/IUMRS-ICA2023  2023.12 

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    Event date: 2023.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:国立京都国際会館   Country:Japan  

  • Fabrication of ZnO Based Transparent Conducting Oxide as an Alternative to In2O3:Sn by Sputtering Combined with Solid Phase Crystallization International conference

    N. Itagaki, Z. Shen, Y. Wada, H. Yabuta, N. Yamashita, T. Okumura, K. Kamataki, K. Koga, M. Shiratani

    MRM2023/IUMRS-ICA2023  2023.12 

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    Event date: 2023.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:国立京都国際会館   Country:Japan  

  • Catalytic ability of Cu and Ni in methanation with plasma catalysis International conference

    S. Toko, T. Okumura, K. Kamataki, K. Takenaka, K. Koga, M. Shiratani, Y. Setsuhara

    MRM2023/IUMRS-ICA2023  2023.12 

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    Event date: 2023.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:国立京都国際会館   Country:Japan  

  • クメンを用いた二周波容量結合プラズマ CVD 法による a-C:H 膜の製膜特性

    恵利眞人, 小野晋次郎, 奥村賢直, 鎌滝晋礼, 山下尚人, 板垣奈穂, 古閑一憲, 白谷 正治

    プラズマ・核融合学会 九州・沖縄・山口支部 第27回 支部大会  2023.12 

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    Event date: 2023.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:山口KDDI維新ホール   Country:Japan  

  • PECVD を用いた a-C:H 成膜における添加希ガス種における成膜機構の違い

    池田築, 大高真寛,大友洋,脇田大地,頼建勲,鎌滝晋礼, 山下大輔,奥村賢直,山下尚人,板垣奈穂,古閑一憲, 白谷正治, 進藤崇央,松土龍夫

    プラズマ・核融合学会 九州・沖縄・山口支部 第27回 支部大会  2023.12 

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    Event date: 2023.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:山口KDDI維新ホール   Country:Japan  

  • 任意波形放電による水素化アモルファスカーボン成膜:イオンフラックスが膜質に与える影響

    脇田大地,大高真寛,池田築,頼建勲,大友洋,鎌滝晋礼,山下直人,板垣奈穂,古閑一憲,白谷正治,進藤崇央,松土龍夫

    プラズマ・核融合学会 九州・沖縄・山口支部 第27回 支部大会  2023.12 

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    Event date: 2023.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:山口KDDI維新ホール   Country:Japan  

  • 逆 Stranski-Krastanov モードによるサファイア基板上への(ZnO)x(InN)1-x 膜のエピタキシャル成長:バッファー層のモフォロジーの影響

    畑昌太朗,中野祐太郎,成重椋太,山下尚人,鎌滝晋礼,奥村賢直,古閑一憲,白谷正治,木山治樹,板垣奈穂

    プラズマ・核融合学会 九州・沖縄・山口支部 第27回 支部大会  2023.12 

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    Event date: 2023.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:山口KDDI維新ホール   Country:Japan  

  • 逆 Stranski-Krastanov モードを利用した異なるオフ角を有するサファイア基板上への(ZnO)x(InN)1-x 膜の成長

    中野祐太郎,成重椋太,山下尚人,鎌滝晋礼,奥村賢直,古閑一憲,白谷正治,木山治樹,板垣奈穂

    プラズマ・核融合学会 九州・沖縄・山口支部 第27回 支部大会  2023.12 

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    Event date: 2023.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:山口KDDI維新ホール   Country:Japan  

  • 放電電圧変調波形が高周波容量結合プラズマに与える影響:PIC-MCC シミュレーション

    長尾伊織,山本祐馬,佐藤優志,鎌滝晋礼,山下尚人, 奥村賢直,木山治樹,板垣奈穂,古閑一憲,白谷正治

    プラズマ・核融合学会 九州・沖縄・山口支部 第27回 支部大会  2023.12 

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    Event date: 2023.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:山口KDDI維新ホール   Country:Japan  

  • 水と大気圧プラズマの相互作用による二酸化炭素分解

    乙部響, P. Attri,奥村賢直, 史合平, 中尾匠,日高直哉, 鎌滝晋礼,山下大輔,板垣奈穂,古閑一憲,白谷正治

    プラズマ・核融合学会 九州・沖縄・山口支部 第27回 支部大会  2023.12 

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    Event date: 2023.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:山口KDDI維新ホール   Country:Japan  

  • TEOS-PECVD における発光分光計測を用いたSiO2 薄膜膜質推定についての研究

    佐藤優志, 山本祐馬, F. W. Sukuma, 長尾伊織, 鎌滝晋礼, 山下大輔, 奥村賢直, 山下尚人, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会 九州・沖縄・山口支部 第27回 支部大会  2023.12 

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    Event date: 2023.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:山口KDDI維新ホール   Country:Japan  

  • 空気プラズマを用いた窒素固定に対する放電電力密度の効果

    中尾匠, 奥村賢直, パンカジアタリ, 山下大輔, 鎌滝晋礼, 山下尚人, 板垣奈穂, 白谷正治, 古閑一憲

    第40回 プラズマ・核融合学会 年会  2023.11 

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    Event date: 2023.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:アイーナ・いわて県民情報交流センター   Country:Japan  

  • リアルタイム蛍光イメージングによる非熱プラズマ照射に対するゼニゴの初発応答解析

    奥村賢直, 坪山祥子, 古閑一憲, 白谷正治, 朽津和幸

    第40回 プラズマ・核融合学会 年会  2023.11 

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    Event date: 2023.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:アイーナ・いわて県民情報交流センター   Country:Japan  

  • Effect of the plasma-generated reactive species on protein folding

    P. Attri, T. Okumura, K. Koga, K. Kamataki, M. Shiratani

    2023年(令和5年度)応用物理学会九州支部学術講演会 / The 8th Asian Applied Physics Conference  2023.11 

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    Event date: 2023.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:九州大学伊都キャンパス   Country:Japan  

  • プラズマ中に浮遊する微粒子の帯電量の新評価法

    井口恒聖, 佐藤斗真, 鎌滝晋礼, P. Yiming, 山下大輔, 奥村賢直, 板垣奈穂, 古閑一憲, 白谷正治, 富田健太郎

    2023年(令和5年度)応用物理学会九州支部学術講演会 / The 8th Asian Applied Physics Conference  2023.11 

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    Event date: 2023.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学伊都キャンパス   Country:Japan  

  • TEOS-PECVD によるSiO2成膜におけるプラズマ発光強度と膜質の関係

    山本祐馬, 佐藤優志, 長尾伊織, 鎌滝晋礼, 山下大輔, 奥村賢直, 山下尚人, 板垣奈穂, 古閑一憲, 白谷正治

    2023年(令和5年度)応用物理学会九州支部学術講演会 / The 8th Asian Applied Physics Conference  2023.11 

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    Event date: 2023.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学伊都キャンパス   Country:Japan  

  • 任意電圧波形放電による容量結合プラズマにおける重畳周波数の効果:PIC-MCCモデル

    頼 建勳, 鎌滝 晋礼, 山下 大輔, 奥村 賢直, 山下 尚人, 板垣 奈穂, 古閑 一憲, 白谷 正治

    2023年(令和5年度)応用物理学会九州支部学術講演会 / The 8th Asian Applied Physics Conference  2023.11 

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    Event date: 2023.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学伊都キャンパス   Country:Japan  

  • Sputtering deposition of single crystalline ZnO films on sapphire substrates via inverted Stranski-Krastanov mode: effects of thickness of 3D island buffer layer

    H. Otsuyama, R. Mitsuishi, T. Yunoue, K. Yataka, N. Yamashita, T. Okumura, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    2023年(令和5年度)応用物理学会九州支部学術講演会 / The 8th Asian Applied Physics Conference  2023.11 

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    Event date: 2023.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:九州大学伊都キャンパス   Country:Japan  

  • Comparative study of deposition characteristics of different precursors for plasma CVD International conference

    S. Ono, M. Eri, T. Okumura, K. Kunihiro, N. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    DPS2023  2023.11 

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    Event date: 2023.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:ウインク愛知   Country:Japan  

  • Quantitative Analysis of Electric Field Intensity Generated by Scalable Dielectric Barrier Discharge Electrodes for Irradiating to Plant Seeds International conference

    K. Koga, T. Okumura, T. Nakao, K. Kamataki, N. Yamashita, N. Itagaki, P. Attri, M. Shiratani

    DPS2023  2023.11 

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    Event date: 2023.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:ウインク愛知   Country:Japan  

  • 持続可能世界へのプラズマ農業の可能な貢献

    白谷正治,アトリパンカジ,奥村賢直,古閑一憲

    第33回日本MRS年次大会  2023.11 

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    Event date: 2023.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜市産業貿易センタービル   Country:Japan  

  • 水分存在下の大気圧プラズマ誘起CO2変換

    古閑一憲,アタリパンカジ,史合平,中尾匠,奥村賢直,白谷正治

    第33回日本MRS年次大会  2023.11 

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    Event date: 2023.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜市産業貿易センタービル   Country:Japan  

  • 大量処理のためのプラズマ照射による土壌への窒素固定化の最適化

    中尾 匠,奥村 賢,アタリ パンカジ,山下 大輔,鎌滝 晋礼,山下 尚人,板垣 奈穂,白谷 正治,古閑 一憲

    第33回日本MRS年次大会  2023.11 

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    Event date: 2023.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜市産業貿易センタービル   Country:Japan  

  • 液体クロマトグラフィー質量分析法を用いたプラズマ被照射物からの亜硝酸塩および硝酸塩の同時検出法の開発

    日高 直哉,奥村 賢直,アタリ パンカジ,鎌滝 晋礼,山下 尚人,板垣 奈穂,古閑 一憲,白谷 正治

    第33回日本MRS年次大会  2023.11 

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    Event date: 2023.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜市産業貿易センタービル   Country:Japan  

  • スケーラブル誘電体バリア放電プラズマを照射したDMPOの質量分析

    乙部 響,史 合平,奥村 賢直,阿南 輝樹,アタリ パンカジ,山下 大輔,鎌滝 晋礼,山下 尚人,板垣 奈穂,古閑 一憲,白谷 正治

    第33回日本MRS年次大会  2023.11 

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    Event date: 2023.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜市産業貿易センタービル   Country:Japan  

  • 質量分析を用いたプラズマ照射イネ種子における分子修飾解析

    史 合平,奥村 賢直,パンカジ アトリ,山下 大輔,鎌滝 晋礼,山下 尚人,板垣 奈穂,古閑 一憲,白谷 正治

    第33回日本MRS年次大会  2023.11 

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    Event date: 2023.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜市産業貿易センタービル   Country:Japan  

  • 低温プラズマによる植物の成長制御の分子メカニズム: 植物における活性酸素種の生理的役割

    朽津和幸,坪山祥子,橋本貴史,橋本研志,奥村賢直,古閑一憲,白谷正治

    第33回日本MRS年次大会  2023.11 

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    Event date: 2023.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:横浜市産業貿易センタービル   Country:Japan  

  • Plasma effect on the enzyme structure: Experimental and simulation studies

    P. Attri,T. Okumura, K. Koga, K. Kamataki, M. Shiratani

    第33回日本MRS年次大会  2023.11 

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    Event date: 2023.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:横浜市産業貿易センタービル   Country:Japan  

  • 種子への誘電体バリア放電プラズマ照射による植物の応答誘導

    奥村賢直,アタリパンカジ,古閑一憲,白谷正治

    第33回日本MRS年次大会  2023.11 

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    Event date: 2023.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜市産業貿易センタービル   Country:Japan  

  • Catalase enzyme inhibition's effect on plasma medicine International conference

    P. Attri, T. Okumura1, K. Koga, M. Shiratani

    AAPPS-DPP2023  2023.11 

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    Event date: 2023.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:ポートメッセ名古屋   Country:Japan  

  • Predictions for High Mobility Amorphous ITO(In2O3:Sn) Films via Hybrid Machine Learning Model International conference

    K. Kamataki, N. Itagaki, D. Yamashita, T. Okumura, N. Yamashita, K. Koga, M. Shiratani

    AAPPS-DPP2023  2023.11 

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    Event date: 2023.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:ポートメッセ名古屋   Country:Japan  

  • Impact of plasma irradiation on plant seeds metabolism International conference

    T. Okumura, P. Attri, Y. Ishibashi, K. Koga, M. Shiratani

    AAPPS-DPP2023  2023.11 

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    Event date: 2023.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:ポートメッセ名古屋   Country:Japan  

  • Highly sensitive electric field vector measurements using an optically trapped fine particle International conference

    M. Shiratani, T. Sato, K. Kamataki, S. W. Fitriani,K. Tomita, P. Yiming, D. Yamashita, N. Yamashita, N. Itagaki, K. Koga

    Global Plasma Forum in Aomori  2023.10 

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    Event date: 2023.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:ねぶたの家 ワ・ラッセ   Country:Korea, Republic of  

  • Controlling the synthesis, transport, and surface coverage of carbon nanoparticles using plasma CVD International conference

    S. Ono, M. Eri, T. Okumura, K. Kamataki, N. Yamashita, H. Kiyama, N. Itagaki, K. Koga, M. Shiratani

    Global Plasma Forum in Aomori  2023.10 

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    Event date: 2023.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:ねぶたの家 ワ・ラッセ   Country:Japan  

  • Evaluation of carbon nanoparticle adhesion on substrate surface deposited by plasma CVD International conference

    K. Koga, S. Ono, M. Eri, T. Okumura, K. Kamataki, N. Yamashita, N. Itagaki, M. Shiratani

    Global Plasma Forum in Aomori  2023.10 

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    Event date: 2023.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:ねぶたの家 ワ・ラッセ   Country:Japan  

  • Evaluation of Interaction Between Substrate and Nanoparticles Deposited by Plasma Chemical Vapor Deposition International conference

    K. Koga, S. Ono, M. Eri, T. Okumura, K. Kamataki, N.Yamashita, N. Itagaki, M. Shiratani

    GEC  2023.10 

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    Event date: 2023.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Michigan League  

  • プラズマ照射による窒素固定肥料へのサトウキビの表現型応答解析

    中尾匠, 奥村賢直, パンカジアタリ, 古閑一憲, 山下大輔, 鎌滝晋礼, 山下尚人, 板垣奈穂, 白谷正治

    第84回応用物理学会秋季学術講演会  2023.9 

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    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本城ホール他   Country:Japan  

  • 光ピンセットによる捕捉微粒子を用いたArプラズマ中の電場強度分布及び電場揺動計測(4)

    鎌滝晋礼, 佐藤斗真, 井口恒聖, 富田健太郎, P. Yiming, 山下大輔, 山下尚人, 奥村賢直, 板垣奈穂, 古閑一憲, 白谷正治

    第84回応用物理学会秋季学術講演会  2023.9 

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    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本城ホール他   Country:Japan  

  • ZnON膜からの固相結晶化ZnO膜の形成と透明導電膜シード層としての効果:ZnON膜の結晶化度の影響

    和田義晴, 沈志遠, 薮田久人, 山下尚人, 奥村賢直, 鎌滝晋礼, 古閑一憲, 白谷正治, 板垣奈穂

    第84回応用物理学会秋季学術講演会  2023.9 

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    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本城ホール他   Country:Japan  

  • 逆Stranski-Krastanovモードを用いたサファイア基板上へのZnO単結晶膜成長:MgOバッファー層の効果

    湯上貴文, 矢高功太郎, 山下尚人, 山下大輔, 奥村賢直, 鎌滝晋礼, 木山治樹, 古閑一憲, 白谷正治, 板垣奈穂

    第84回応用物理学会秋季学術講演会  2023.9 

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    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本城ホール他   Country:Japan  

  • サファイア基板上への原子ステップを有するZn1-xMgxO薄膜の形成:3次元島バッファー層の形成温度の影響

    矢高功太郎, 湯上貴文, 山下尚人, 奥村賢直, 鎌滝晋礼, 古閑一憲, 白谷正治, 板垣奈穂

    第84回応用物理学会秋季学術講演会  2023.9 

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    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本城ホール他   Country:Japan  

  • ZnOおよびScAlMgO4ステップ基板上への(ZnO)x(InN)1-x膜の室温エピタキシャル成長

    成重椋太, 中野祐太朗, 山下尚人, 鎌滝晋礼, 奥村賢直, 木山治樹, 古閑一憲, 白谷正治, 薮田久人, 板垣奈穂

    第84回応用物理学会秋季学術講演会  2023.9 

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    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本城ホール他   Country:Japan  

  • 逆Stranski-Krastanovモードによる格子不整合基板上への原子平坦 (ZnO)x(InN)1-x 膜の成長

    中野祐太郎, 成重椋太, 山下尚人, 鎌滝晋礼, 奥村賢直, 古閑一憲, 白谷正治, 木山治樹, 薮田久人, 板垣奈穂

    第84回応用物理学会秋季学術講演会  2023.9 

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    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本城ホール他   Country:Japan  

  • 質量分析を用いたプラズマ照射DMPOの分子修飾解析

    史合平, 奥村賢直, P. Attri, 山下大輔, 鎌滝晋礼, 山下尚人, 板垣奈穂, 古閑一憲, 白谷正治

    第84回応用物理学会秋季学術講演会  2023.9 

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    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本城ホール他   Country:Japan  

  • サンドウィッチ構造 a-C:H 膜の剥離と強度に対する 膜界面に堆積したナノ粒子の効果

    小野晋次郎, 恵利眞人, 奥村賢直, 鎌滝晋礼, 山下尚人, 木山治樹, 板垣奈穂, 古閑一憲, 白谷正治

    第84回応用物理学会秋季学術講演会  2023.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本城ホール他   Country:Japan  

  • 任意波形放電を用いた水素化アモルファスカーボン膜の膜質制御

    大高真寛,大友洋, 池田築, 頼建勲, 脇田大地, 鎌滝晋礼, 山下直人, 板垣奈穂, 古閑一憲, 白谷正治, 進藤崇央, 田中諭志, 松土龍夫

    第84回応用物理学会秋季学術講演会  2023.9 

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    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本城ホール他   Country:Japan  

  • プラズマを用いたCO2の水素還元における選択性の制御

    都甲将, 奥村賢直, 鎌滝晋礼, 竹中弘祐, 古閑一憲, 白谷正治, 節原裕一

    第84回応用物理学会秋季学術講演会  2023.9 

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    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本城ホール他   Country:Japan  

  • 質量分析を用いたプラズマ照射イネ種子における変動分子の組織別解析

    史合平, 奥村賢直, A. Pankaj, 山下大輔, 鎌滝晋礼, 山下尚人, 板垣奈穂, 古閑一憲, 白谷正治

    2023年度(第76回)電気・情報関係学会九州支部連合大会  2023.9 

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    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:崇城大学   Country:Japan  

  • 大気圧空気プラズマによる硝酸態窒素固定量に対する放電電力密度依存性

    中尾匠, 奥村賢直, A. Pankaj, 古閑一憲, 山下大輔, 鎌滝晋礼, 山下尚人, 板垣奈穂, 白谷正治

    2023年度(第76回)電気・情報関係学会九州支部連合大会  2023.9 

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    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:崇城大学   Country:Japan  

  • Measurement of electric field, UV photons, and long-lifetime reactive species generated by atmospheric pressure air plasma for plasma bio applications International conference

    T. Okumura, S. Tsuboyama, Y. Tagawa, T. Nakao, T. Anan, H. Tanaka, K. Kamataki, N. Yamashita, N. Itagaki, P. Attri, K. Koga, M. Shiratani, K. Kuchitsu

    ICPIG2023  2023.7 

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    Event date: 2023.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hotel Zuiderduin, Egmonf aan Zee   Country:Netherlands  

  • Effects of tailored voltage waveform discharges on deposition of hydrogenated amorphous carbon films by CH4/Ar capacitively coupled plasma International conference

    M. Otaka, H. Otomo, K. Ikeda, J. Lai, K. Kamataki, T. Okumura, N. Yamashita, N. Itagaki, K. Koga, M. Shiratani, T. Shindo, S. Tanaka, T. Matsudo

    ICPIG2023  2023.7 

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    Event date: 2023.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hotel Zuiderduin, Egmonf aan Zee   Country:Netherlands  

  • Optical tweezers technique for electric field strength and fluctuation measurements in plasma using a fine particle International conference

    T. Sato, K. Kamataki, K. Tomita, P. Yiming, D. Yamashita, N. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    ICPIG2023  2023.7 

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    Event date: 2023.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hotel Zuiderduin, Egmonf aan Zee   Country:Netherlands  

  • Control of ion trajectory in high aspect ratio trenches by using amplitude modulated rf discharges International conference

    I. Nagao, Y. Yamamoto, K. Kamataki, T. Okumura, N. Yamashita, H. Kiyama, N. Itagaki, K. Koga, M. Shiratani

    ICPIG2023  2023.7 

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    Event date: 2023.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hotel Zuiderduin, Egmonf aan Zee   Country:Netherlands  

  • Investigation of particle charge and interparticle interaction in a plasma International conference

    K. Kamataki, T. Sato, K. Tomita, P. Yiming, D. Yamashita, N. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    ICPIG2023  2023.7 

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    Event date: 2023.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hotel Zuiderduin, Egmonf aan Zee   Country:Netherlands  

  • Coverage control of carbon nanoparticles on substrate using capacitively coupled plasma chemical vapor deposition International conference

    K. Koga, S. Ono, T. Okumura, K. Kamataki, N. Yamashita, N. Itagaki, M. Shiratani

    ICPIG2023  2023.7 

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    Event date: 2023.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hotel Zuiderduin, Egmonf aan Zee   Country:Netherlands  

  • Sputter epitaxy of atomically flat (ZnO)x(InN)1-x films on sapphire substrates using ZnO(N) buffer layers fabricated by Ar/N2 discharges International conference

    Y. Nakano, R. Narishige, N. Yamashita, K. Kamataki, T. Okumura, K. Koga, M. Shiratani, H. Kiyama, H. Yabuta, N. Itagaki

    ICPIG2023  2023.7 

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    Event date: 2023.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hotel Zuiderduin, Egmonf aan Zee   Country:Netherlands  

  • Deposition characteristics of cumene plasma CVD for high-speed deposition of high-density a-C:H films International conference

    S. Ono, T. Okumura, K. Kamataki, N. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    ICPIG2023  2023.7 

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    Event date: 2023.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hotel Zuiderduin, Egmonf aan Zee   Country:Netherlands  

  • Relation between Spatial Distribution of Optical Emission Intensity and SiO2 Film Property in TEOS-PECVD International conference

    Y. Yamamoto, I. Nagao, A. Yamamoto, K. Kamataki, D. Yamashita, T. Okumura, N. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    ICPIG2023  2023.7 

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    Event date: 2023.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hotel Zuiderduin, Egmonf aan Zee   Country:Netherlands  

  • Effects of Ne mixing on plasma enhanced chemical vapor deposition of a-C:H films using CH4/Ar/Ne capacitively coupled discharges International conference

    K. Ikeda, M. Otaka, H. Otomo, T. Arima, J. Lai, K. Kamataki, D. Yamashita, T. Okumura, N. Yamashita, H. Kiyama, N. Itagaki, K. Koga, M. Shiratani, T. Shindo, S. Tanaka, T. Matsudo

    ICPIG2023  2023.7 

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    Event date: 2023.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hotel Zuiderduin, Egmonf aan Zee   Country:Netherlands  

  • Sputter epitaxy of Zn1-xMgxO films on lattice-mismatched sapphire substrates utilizing ZnO(N)/MgO buffer layers fabricated by Ar/N2 and Ar/O2 discharges International conference

    T. Yunoue, K. Yataka, N. Yamashita, D. Yamashita, T. Okumura, K. Kamataki, H. Kiyama, K. Koga, M. Shiratani, H. Yabuta, N. Itagaki

    ICPIG2023  2023.7 

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    Event date: 2023.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hotel Zuiderduin, Egmonf aan Zee   Country:Netherlands  

  • Pseudomorphic growth of (ZnO)x(InN)1-x films on ZnO substrates by magnetron sputtering using Ar/N2/O2 discharges International conference

    R. Narishige, Y. Nakano, N. Yamashita, K. Kamataki, T. Okumura, H. Kiyama, K. Koga, M. Shiratani, H. Yabuta, N. Itagaki

    ICPIG2023  2023.7 

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    Event date: 2023.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hotel Zuiderduin, Egmonf aan Zee   Country:Netherlands  

  • Sputter deposition of low resistive 30-nm-thick ZnO:Al films using ZnO seed layers grown via solid-phase crystallization International conference

    Y. Wada, Z. Shen, H. Yabuta, N. Yamashita, T. Okumura, K. Kamataki, H. Kiyama, K. Koga, M. Shiratani, N. Itagaki

    ICPIG2023  2023.7 

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    Event date: 2023.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hotel Zuiderduin, Egmonf aan Zee   Country:Netherlands  

  • Effects of lower discharge frequency on ion energy distribution function in dual frequency plasma studied by particle-in-cell/Monte Carlo method International conference

    J. Lai, T. Arima, M. Otaka, K. Ikeda, I. Nagao, K. Kamataki, D. Yamashita, N. Yamashita, N. Itagaki, T. Okumura, K. Koga, M. Shiratani

    ICPIG2023  2023.7 

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    Event date: 2023.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hotel Zuiderduin, Egmonf aan Zee   Country:Netherlands  

  • Stress reduction of a-C:H films by nano-structuring of inter-layer of films deposited by plasma CVD(Invited) Invited International conference

    K. Koga, S. Ono, T. Okumura, M. Shiratani

    Thermec'2023  2023.7 

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    Event date: 2023.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:ウィーン工科大学   Country:Austria  

  • Molecular Recognition and Response in Plants from Plasma Irradiation(Invited) Invited International conference

    K. Koga

    IWOPA4  2023.6 

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    Event date: 2023.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:KwangWoon University, Seoul, Korea   Country:Korea, Republic of  

  • プラズマ中帯電微粒子の相互作用に関する研究

    井口恒聖, 佐藤斗真, 鎌滝晋礼, 富田健太郎, P. Yiming, 山下尚人, 山下大輔, 奥村賢直, 板垣奈穂, 古閑一憲, 白谷正治

    2023年度日本表面真空学会 九州支部学術講演会  2023.6 

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    Event date: 2023.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:アルカス佐世保   Country:Japan  

  • ナノ粒子を用いた膜界面の形状ゆらぎによる膜応力低減

    小野晋次郎, 恵利眞人, 奥村賢直, 鎌滝晋礼, 山下尚人, 木山治樹, 板垣奈穂, 古閑一憲, 白谷正治

    2023年度日本表面真空学会 九州支部学術講演会  2023.6 

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    Event date: 2023.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:アルカス佐世保   Country:Japan  

  • Plasma-induced CO2 conversion: Experimental and Computational study International conference

    P. Attri, T. Okumura, K. Koga, N. Takeuchi, K. Kamataki, M. Shiratani

    ISPC25  2023.5 

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    Event date: 2023.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:みやこめっせ   Country:Japan  

  • Prediction of Plasma CVD Process Data of a-Si:H Films via Machine Learning International conference

    K. Kamataki, F. L. Chawarambwa, D. Yamashita, N. Yamashita, T.Okumura, N. Itagaki, K.Koga, M. Shiratani

    ISPC25  2023.5 

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    Event date: 2023.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:みやこめっせ   Country:Japan  

  • Effects of sputtering of a-C:H films on the chemical composition International conference

    M. Shiratani, K. Ikeda, M. Otaka, S. Ono, T. Okumura, K. Koga, K. Kamataki

    ISPC25  2023.5 

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    Event date: 2023.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:みやこめっせ   Country:Japan  

  • TEOSプラズマSiO2成膜に及ぼす振幅変調放電の効果

    山本晃大、長尾伊織、山本祐馬、大高真寛、山下大輔、鎌滝晋礼、奥村賢直、山下尚人、板垣奈穂、古閑一憲、白谷正治

    2022年度日本表面真空学会 九州支部学術講演会  2022.6 

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    Event date: 2022.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:佐賀大学   Country:Japan  

  • 大気圧空気プラズマで生成した硝酸態窒素の水表面への輸送評価

    中尾匠、奥村賢直、P. Attri、古閑一憲、山下大輔、鎌滝晋礼、山下尚人、板垣奈穂、白谷正治

    2022年度日本表面真空学会 九州支部学術講演会  2022.6 

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    Event date: 2022.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:佐賀大学   Country:Japan  

  • 逆Stranski-Krastanovモードによる単結晶ZnO薄膜のスパッタリング成膜:窒素流量の影響

    三石遼, 山下尚人, 矢高功太郎, 奥村賢直, 鎌滝晋礼, 古閑一憲, 白谷正治, 板垣奈穂

    2022年度日本表面真空学会 九州支部学術講演会  2022.6 

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    Event date: 2022.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:佐賀大学   Country:Japan  

  • Development of Measurement of Two-Dimensional Distribution of Strength of Electrical Field with High Spatial Resolution Using Optical Trapped Particle in Plasma International conference

    K. Kamataki, S. Okunaga,T. Sato,K. Tomita, P. Yimin, D. Yamashita, N. Yamashita, T. Okumura, N. Itagaki, K. Koga, M. Shiratani

    MRS spring meeting 2022  2022.5 

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    Event date: 2022.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン  

  • Key parameters for single crystalline ZnO film growth by magnetron sputtering via inverted Stranski-Krastanov mode International conference

    N. Yamashita, Y. Nakamura, K. Kamataki, T. Okumura, K. Koga, M. Shiratani, N. Itagaki

    MRS spring meeting 2022  2022.5 

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    Event date: 2022.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン  

  • Growth of Nanoparticles in TEOS rf Plasma with Amplitude Modulation International conference

    A. Yamamoto, K. Abe, I. Nagao, M. Otaka, D. Yamashita, K. Kamataki, T. Okumura, N. Itagaki, K. Koga, M.Shiratani

    MRS spring meeting 2022  2022.5 

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    Event date: 2022.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン  

  • Epitaxial Growth of Atomically Flat Single-crystalline (ZnO) (InN) Films on O-polar ZnO Substrates by Magnetron Sputtering International conference

    R. Narishige, N. Yamashita, K. Kamataki, T. Okumura, K. Koga, M. Shiratani, N.Itagaki

    MRS spring meeting 2022  2022.5 

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    Event date: 2022.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン  

  • Quantitative Evaluation through LC-QqQ MS/MS for RONS Induced into Dry Seeds by Non-Thermal Plasma Irradiation International conference

    T. Okumura , K. Koga , P. Attri , K. Kamataki , N. Yamashita , N. Itagaki, M. Shiratani

    MRS spring meeting 2022  2022.5 

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    Event date: 2022.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:ホノルル  

  • Structural Control of Hydrogenated Amorphous Carbon Films by Substrate Position and Gas Pressure in Plasma Chemical Vapor Deposition International conference

    S. Ono, S. H. Hwang, D. Yoshikawa, T. Okumura, K. Kamataki, N. Yamashita, N. Itagaki, K. Koga, M. Shiratani, J. S. Oh, S. Takabayashi, T. Nakatani

    MRS spring meeting 2022  2022.5 

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    Event date: 2022.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:ホノルル  

  • Amplitude Modulation Frequency Dependence of Ion Energy Distribution in Capacitively Coupled Discharge Plasma Studied by Particle-in-Cell/Monte Carlo Collision Method International conference

    I. Nagao, A. Yamamoto, K. Kamataki, D. Yamashita, N. Yamashita, T. Okumura, N. Itagaki, K. Koga, M. Shiratani

    MRS spring meeting 2022  2022.5 

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    Event date: 2022.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:ホノルル  

  • Position Fluctuation of a Fine Particle Trapped with Laser Tweezers in Ar Plasma International conference

    T. Sato, S. Okunaga, K. Kamataki, K. Tomita, P. Yiming, D. Yamashita, T. Okumura, N. Itagaki, K. Koga, M. Shiratani

    MRS spring meeting 2022  2022.5 

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    Event date: 2022.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:ホノルル  

  • Effects of rf Frequency on Plasma Density in Capacitively Coupled Plasmas at Low Pressure Studied by Particle-in-Cell/Monte Carlo Collision Method International conference

    T. Arima , T. Yang, K. Kamataki, D. Yamashita, N. Yamashita, T. Okumura, N. Itagaki, K. Koga, M. Shiratani

    MRS spring meeting 2022  2022.5 

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    Event date: 2022.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:ホノルル  

  • Time Resolved Optical Emission Spectroscopy in Ar and Ar/Ne Capacitively Coupled Radio Frequency Plasma International conference

    M. Otaka, D. Nagamatsu, T. Arima, K. Kamataki, D. Yamashita, N. yamashita, T. Okumura, N. Itagaki, K. Koga, M. Shiratani

    MRS spring meeting 2022  2022.5 

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    Event date: 2022.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:ホノルル  

  • Stress Relaxation of Hydrogenated Amorphous Carbon Films by Incorporating Carbon Nanoparticles Using Plasma Chemical Vapor Deposition International conference

    K. Koga, S. H. Hwang, S. Ono, D. Yoshikawa, T. Okumura, N. Yamashita, K. Kamataki, N. Itagaki, M. Shiratani, J-S. Oh, S. Takabayashi, T. Nakatani

    MRS spring meeting 2022  2022.5 

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    Event date: 2022.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:ホノルル  

  • Epitaxial Growth of Single-Crystalline ZnO Films on Sapphire Substrates via Inverted Stranski-Krastanov Mode by Low-Power Magnetron Sputtering International conference

    R. Mitsuishi, N. Yamashita, D.Takahashi, T. Okumura, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    MRS spring meeting 2022  2022.5 

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    Event date: 2022.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:ホノルル  

  • 任意電圧波形励起PECVDによるa-C:H成膜における希ガスの効果の検証

    永松 大樹, 有馬 聡明, 大高 真寛, 山下 大輔, 鎌滝 晋礼, 古閑 一憲, 白谷 正治, 大友 洋, 進藤 崇央, 田中 諭志, 松戸 龍夫

    第69回応用物理学会春季学術講演会  2022.3 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学・オンライン   Country:Japan  

  • 光ピンセットによる捕捉微粒子を用いたArプラズマ中の電場強度分布及び電場揺動計測

    鎌滝晋礼, 奥永冴京, 佐藤斗真, 富田健太郎, P. Yiming, 山下大輔, 山下尚人,奥村賢直, 板垣奈穂, 古閑一憲, 白谷正治

    第69回応用物理学会春季学術講演会  2022.3 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学・オンライン   Country:Japan  

  • プラズマ CVD 法を用いた a-C:H 薄膜製膜特性に対するガス圧力・基板位置の効果

    小野晋次郎, 吉川大智, 黄成和, 奥村賢直, 鎌滝晋礼, 山下尚人, 板垣奈穂, 古閑一憲, 白谷正治, 呉準席, 鷹林将, 中谷達行

    第69回応用物理学会春季学術講演会  2022.3 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学・オンライン   Country:Japan  

  • CNP 層を挿入した a-C:H 膜の応力低減に対する CNP 被覆率の効果

    吉川大智, 小野晋次郎, 黄成和, 奥村賢直, 鎌滝晋礼, 山下尚人, 板垣奈穂, 古閑一憲, 白谷正治, 鷹林将,呉準席, 中谷達行

    第69回応用物理学会春季学術講演会  2022.3 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学・オンライン   Country:Japan  

  • プラズマ触媒作用を用いたCO2メタネーションにおける振動回転励起CO分子の役割

    都甲 将, 出口 雅志, 長谷川 大樹, 奥村 賢直, 鎌滝 晋礼, 竹中 弘祐, 古閑 一憲, 白谷 正治, 節原 裕一

    第69回応用物理学会春季学術講演会  2022.3 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学・オンライン   Country:Japan  

  • 植物へのプラズマ照射効果解明に向けたゼニゴケ実験系の確立

    古閑一憲, 坪山祥子,田川雄大, 中尾匠,田中颯,阿南輝樹,奥村賢直 ,P. Attri,鎌滝晋礼,山下尚人 ,板垣奈穂 ,白谷正治 ,朽津和幸

    第69回応用物理学会春季学術講演会  2022.3 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学・オンライン   Country:Japan  

  • 任意電圧波形励起 PECVD による a-C:H 成膜における希ガスの効果の検証

    永松大樹, 有馬聡明, 大高真寛, 山下大輔, 鎌滝晋礼, 古閑一憲, 白谷正治, 大友洋, 進藤崇央, 田中諭志, 松土龍夫

    第69回応用物理学会春季学術講演会  2022.3 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学・オンライン   Country:Japan  

  • パルス放電プラズマを用いたCO2メタン化に対する放電休止時間の効果

    長谷川大樹,出口 雅史,山下大輔,都甲将,鎌滝晋礼,古閑一憲, 白谷正治

    第69回応用物理学会春季学術講演会  2022.3 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学・オンライン   Country:Japan  

  • 調湿レタス種子のラジカル量に与えるプラズマ照射の効果

    奥村賢直,阿南輝樹,パンカジアタリ, 古閑一憲, 鎌滝晋礼,山下尚人, 板垣奈穂, 白谷正治, 石橋勇

    第69回応用物理学会春季学術講演会  2022.3 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学・オンライン   Country:Japan  

  • インジウム・スズ酸化物ナノ粒子の皮下および気管内投与による生体影響の比較

    田中昭代, 松村渚, 田中佑樹, 小椋康光, 古閑一憲, 白谷正治, 長野嘉介

    第92回日本衛生学会学術総会  2022.3 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学・オンライン   Country:Japan  

  • プラズマCVDを用いて堆積した薄膜のナノ構造化による機械的特性制御

    古閑一憲,黄成和,小野晋次郎,吉川大智, 奥村賢直,鎌滝晋礼,山下尚人,板垣奈穂,白谷正治

    日本物理学会 第77回年次大会(2022年)  2022.3 

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    Event date: 2022.3 - 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Deposition of Carbon Nanoparticles of 5 nm in Size on Positively Biased Substrates using Multi-Hollow Discharge Plasma CVD Method International conference

    K. Koga, S. H. Hwang, S. Ono, D. Yoshikawa, T. Okumura, K. Kamataki, N. Yamashita, N. Itagaki, M. Shiratani

    ISPlasma2022/IC-PLANTS2022  2022.3 

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    Event date: 2022.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Effects of Concentration of Plasma Activated Lactate on Germination of Arabidopsis thaliana Seeds International conference

    H. Tanaka, T. Okumura, P. Attri, T. Anan, K. Kamataki, N. Itagaki, M. Shiratani, Y. Ishibashi, M. Nakano, K. Namiki, S. Tsuboyama, K. Hashimoto, K. Kuchitsu, H. Hashizume, K. Ishikawa, M. Hori, K. Koga

    ISPlasma2022/IC-PLANTS2022  2022.3 

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    Event date: 2022.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • ナノダストの堆積制御

    古閑一憲

    令和3年度LHDにおけるプラズマ・壁相作用に関する研究会および静岡大学「放射科学が切り拓くグリーン・エネルギー超領域科学研究」研究会  2022.2 

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    Event date: 2022.2

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • プラズマ触媒を用いたCO2メタン化のためのプラズマシミュレーシンョン

    都甲将,出口雅志, 長谷川大樹, 奥村賢直, 鎌滝晋礼, 竹中弘祐, 古閑一憲,白谷正治, 節原裕一

    SPP-39/SPSM34  2022.1 

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    Event date: 2022.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • プラズマ照射肥料を用いて栽培した植物の成長解析

    奥村 賢直, アタリバンカジ,中尾匠, 田中颯, 鎌滝晋礼, 山下尚人, 古閑ー憲, 板垣奈穂, 白谷正治, 竹内希

    SPP-39/SPSM34  2022.1 

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    Event date: 2022.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • プラズマ照射による酸化還元反応に対する種子内水分量の効果

    阿南 輝樹, 田中颯,奥村賢直, アタリパンカジ, 中尾匠, 鎌滝晋礼,山下尚人, 板垣奈穂,古閑ー憲, 白谷 正治

    SPP-39/SPSM34  2022.1 

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    Event date: 2022.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • AM変調放電を圧いたTEOS プラズマにおけるナノ粒子成長とプラズマ生成の関係についての研究

    鎌滝晋礼, 阿部滉平, 山本晃大, 長尾伊織, 大高真寛, 山下大輔, 奥村賢直, 板垣奈穂, 古閑ー憲, 白谷正治

    SPP-39/SPSM34  2022.1 

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    Event date: 2022.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • 異なる状態の混合粉末ターゲットによるAlドープ酸化亜鉛薄膜のスパッタリング堆積

    大島多美子, 日比野祐介,猪原武士,柳生義人, 佐竹卓彦, 川崎 仁晴, 青木 振一, 板垣奈穂, 古閑一憲, 白谷正治

    SPP-39/SPSM34  2022.1 

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    Event date: 2022.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • 光ピンセット技術を用いたプラズマ中微粒子への作用力の絶対値校正

    佐藤斗真, 奥永冴京, 鎌滝晋礼, 富田健太郎, P. Yiming, 山下大輔, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第24回支部大会  2021.12 

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    Event date: 2021.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Solid-phase Crystallization of Sputter-deposited ZnON Films and Their Impacts as Seed Layers for ZnO:Al Transparent Conducting Oxides

    Z. Shen, N. Yamashita, Y. Mido, T. Okumura, K. Kamataki, K. Koga, M. Shiratani, H. Yabuta, N. Itagaki

    プラズマ・核融合学会九州・沖縄・山口支部 第24回支部大会  2021.12 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • 逆 Stranski-Krastanov モードを利用した単結晶 ZnMgO 薄膜のスパッタリング成膜

    矢髙功太郎, 山下尚人, 髙橋大智, 山下大輔, 奥村賢直, 鎌滝晋礼, 古閑一憲, 白谷正治, 板垣奈穂

    プラズマ・核融合学会九州・沖縄・山口支部 第24回支部大会  2021.12 

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    Event date: 2021.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • 平行平板容量結合高周波放電プラズマの AM 変調周波数依存性に関する PICMCC シミュレーション

    長尾伊織, 阿部滉平, 山本晃大, 鎌滝晋礼, 山下大輔, 奥村賢直, 山下尚人, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第24回支部大会  2021.12 

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    Event date: 2021.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • PIC-MCCM を用いた平行平板容量結合プラズマに対する放電周波数依存性に関する研究

    陶陽, 阿部滉平, 鎌滝晋礼, 山下大輔, 奥村賢直, 山下尚人, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第24回支部大会  2021.12 

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    Event date: 2021.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • 平行平板容量結合高周波プラズマ発光の時空間分解計測

    大高真寛, 有馬聡明, 永松大樹, 山下大輔, 奥村賢直, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第24回支部大会  2021.12 

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    Event date: 2021.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • N2/SiH4 flow rate ratio dependence of nanoparticle incorporation in SiNx films deposited by plasma CVD International conference

    M. Shiratani, Y. Sasaki, K. Kamataki, N. Itagaki, K. Koga

    Materials Research Meeting 2021 (MRM2021)  2021.12 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Kinetic study of effects of discharge power on CO2 methanation using a plasma catalyst International conference

    T. Hasegawa, M. Ideguchi, D. Yamashita, S. Toko, K. Kamataki, K. Koga, M. Shiratani

    Materials Research Meeting 2021 (MRM2021)  2021.12 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Effect of rf bias on the film property of amorphous silicon oxide films deposited by plasma enhanced chemical vapor deposition International conference

    A. Yamamoto, K. Abe, I. Nagao, M. Otaka, D. Yamashita, K. Kamataki, T. Okumura, N. Itagaki, K. Koga, M. Shiratani

    Materials Research Meeting 2021 (MRM2021)  2021.12 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Structural Analysis of Hydrogenated Amorphous Carbon Films Deposited by Capacitively Coupled Plasma Chemical Vapor Deposition International conference

    S. Ono, S. H. Hwang, T. Okumura, K. Kamataki, N. Itagaki, K. Koga, J. S. Oh, S. Takabayashi, T. Nakatani, M. Shiratani

    Materials Research Meeting 2021 (MRM2021)  2021.12 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Effects of pulse rf discharge on carbon dioxide methanation in plasma catalytic method International conference

    M. Ideguchi, T. Hasegawa, D. Yamashita, S. Toko, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Materials Research Meeting 2021 (MRM2021)  2021.12 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Green route for ammonium nitrate synthesis: Fertilizer for plant growth enhancement International conference

    P. Attri, K. Koga, T. Okumura, N. Takeuchi, M. Shiratani

    Materials Research Meeting 2021 (MRM2021)  2021.12 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Effect of intraseed moisture and plasma irradiation on lettuce seed surface International conference

    T. Okumura, T. Anan, H. Tanaka, D. Yamashita, P. Attri, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, Y. Ishibashi, Y. Fujimoto, M. Kumauchi, H. Matsui

    Materials Research Meeting 2021 (MRM2021)  2021.12 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Ion Energy Distribution Function in DC Pulse biased Capacitively Coupled Plasma Discharge by using Particle-In-Cell/Monte Carlo Collision Model International conference

    K. Abe, A. Yamamoto, I. Nagao, M. Otaka, D. Yamashita, K. Kamataki, T. Okumura, N. Itagaki, K. Koga, M. Shiratani

    Materials Research Meeting 2021 (MRM2021)  2021.12 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Investigation of 2D electric field measurements in Ar plasmas using a fine particle trapped with laser tweezers International conference

    K. Kamataki, S. Okunaga, T. Sato, K. Tomita, P. Yimin, D. Yamashita, T. Okumura, N. Itagaki, K. Koga, M. Shiratani

    Materials Research Meeting 2021 (MRM2021)  2021.12 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Study of Position Fluctuation of a Fine Particle Trapped with Laser Tweezers in Ar Plasma International conference

    T. Sato, S. Okunaga, K. Kamataki, K. Tomita, P. Yiming, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    Materials Research Meeting 2021 (MRM2021)  2021.12 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Calibration of force acting on an optically trapped particle in Ar plasma International conference

    S. Okunaga, T. Sato, K. Kamataki, K. Tomita, P. Yiming, D. Yamashita, T. Okumura, N.Itagaki, K. Koga, M. Shiratani

    Materials Research Meeting 2021 (MRM2021)  2021.12 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Structural analysis of carbon nanoparticle composite films prepared by Ar+CH4 multi-hollow plasma chemical vapor deposition International conference

    S. H. Hwang, S. Ono, T. Okumura, K. Kamataki, N. Itagaki, K. Koga, T. Nakatani, M. Shiratani

    Materials Research Meeting 2021 (MRM2021)  2021.12 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Measurements of Radial and Vertical Electric Field in Capacitively Coupled Plasma International conference

    Y.Tao, D. Nagamatsu, K. Kamataki, D. Yamashita, T. Okumura, N. Itagaki, K. Koga, M. Shiratani

    Materials Research Meeting 2021 (MRM2021)  2021.12 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Possible plasma oxidation effect on the binding of C-terminal Domain of SARS-CoV-2 Spike Protein with Human Angiotensin-Converting Enzyme 2 (hACE2): A computational study International conference

    K. Koga, T. Okumura, K. Kamataki, N. Itagaki, M. Shiratani, P. Attri

    Materials Research Meeting 2021 (MRM2021)  2021.12 

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    Event date: 2021.12

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    Venue:オンライン   Country:Japan  

  • Developing Prediction of Key Process Parameters of Plasma CVD for Fabricating a-Si:H Solar Cells through Boosting Technique International conference

    F. Chen, K. Kamataki, Y. Tao, S. Okunaga, D. Yamashita, T. Okumura, N. Itagaki, K. Koga, M. Shiratani

    Materials Research Meeting 2021 (MRM2021)  2021.12 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Improved luminescence performance of Yb3+-Er3+-Zn2+: Y2O3 nanophosphor and its application to Solar Cells

    L. F. Chawarambwa, K. Koga, K. Kamataki, M. Shiratani

    第31回日本MRS年次大会  2021.12 

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    Venue:オンライン   Country:Japan  

  • Plasma treatment causes structural modifications in proteins, result in increased cytotoxicity towards cancer cells

    P.Attri, K. Koga, T. Okumura, M. Shiratani

    第31回日本MRS年次大会  2021.12 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • ポッケルスセルを用いたスケーラブル誘電体バリア放電により生じる電界の測定

    田川雄大, 奥村賢直, 鎌滝晋礼, A. Pankaj, 山下大輔, 古閑一憲, 板垣奈穂, 白谷正治

    第31回日本MRS年次大会  2021.12 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • スケーラブル誘電体バリア放電による対象物への活性酸素窒素種暴露量の評価

    中尾匠, 阿南輝樹, 田中颯, 奥村賢直, 山下大輔, A. Pankaj, 鎌滝晋礼, 古閑一憲, 板垣奈穂, 白谷正治

    第31回日本MRS年次大会  2021.12 

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    Venue:オンライン   Country:Japan  

  • 水素と触媒を用いない低圧窒素プラズマを用いた窒素肥料作製

    古閑一憲, アタリ パンカジ, 奥村賢直, 竹内希, 鎌滝晋礼, 板垣奈穂, 白谷正治

    第31回日本MRS年次大会  2021.12 

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    Event date: 2021.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • 電子常磁性共鳴法を用いたレタス種子内ラジカル量のプラズマ照射時間依存性

    阿南輝樹, 田中颯, 奥村賢直, A. Pankaj, 山下大輔, 古閑一憲, 鎌滝晋礼, 板垣奈穂, 石橋勇志, 白谷正治

    第31回日本MRS年次大会  2021.12 

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    Event date: 2021.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • イネ種子へのプラズマ照射がDNAメチル化レベルに及ぼす影響

    田中颯, 阿南輝樹, 奥村賢直, A. Pankaj, 古閑一憲, 鎌滝晋礼, 板垣奈穂, S. Chetphilin, 石橋勇志, 白谷正治

    第31回日本MRS年次大会  2021.12 

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    Event date: 2021.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • プラズマ照射された植物種子に関する物理的、化学的および分子生物学的研究 Invited

    奥村賢直, アトリ パンカジ,石橋勇志, 鎌滝晋礼, 古閑一憲, 板垣奈穂, 白谷正治

    第31回日本MRS年次大会  2021.12 

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    Event date: 2021.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Investigation of Growth Suppression Mechanism of Nanoparticles through Amplitude Modulation Discharge Method in TEOS Plasma International conference

    K. Kamataki, K. Abe, A. Yamamoto, I. Nagao, M. Otaka, D. Yamashita, N. Itagaki, T. Okumura, K. Koga, M. Shiratani

    the 12th Asia-Pacific International Symposium on the Basics and Applications of Plasma Technology (APSPT-12)  2021.12 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Taiwan, Province of China  

  • Oxidation of Catalase by Plasma Treatment: A Probable Mechanism of Cancer Treatment International conference

    P. Attri, T. Okumura, K. Koga, M. Shiratani

    the 12th Asia-Pacific International Symposium on the Basics and Applications of Plasma Technology (APSPT-12)  2021.12 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Taiwan, Province of China  

  • Flowing Electrolyte System of Bifacial Dye-Sensitized Solar Cells Under Low-Concentrated Light International conference

    T. E. Putri, L. F. Chawarambwa, P. Attri, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    MRS fall meeting 2021  2021.12 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン  

  • High-temperature Growth of Amorphous In O :Sn Films by Magnetron Sputtering using Nitrogen International conference

    Y. Mido, K. Takeda, D. Yamashita, T. Okumura, K. Kamataki, K. Koga, M. Shiratani, M. Hori, N. Itagaki

    MRS fall meeting 2021  2021.12 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン  

  • Epitaxial Growth of Atomically Flat Single-crystalline (ZnO) (InN) Films on O-polar ZnO Substrates by Magnetron Sputtering International conference

    R. Narishige, N. Yamashita, K. Kamataki, T. Okumura, K. Koga, M. Shiratani, N. Itagaki

    MRS fall meeting 2021  2021.12 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン  

  • Inverted Stranski-Krastanov Growth of Single-Crystalline Zn Mg O Films on Sapphire Substrates using Magnetron Sputtering International conference

    D. Takahashi, D. Yamashita, T. Okumura, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    MRS fall meeting 2021  2021.12 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン  

  • Effects of Plasma Irradiation to Moistened Seeds on Radical Amount International conference

    T. Anan, H. Tanaka,T. Okumura, P. Attri,D. Yamashita,K. Kamataki,K. Koga, N. Itagaki, M. Shiratani, Y.Ishibashi

    The 6th Asian Applied Physics Conference (Asian-APC)  2021.12 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Deposition of a-C:H films using tailored voltage waveforms in plasma enhanced CVD International conference

    D. Nagamatsu, T. Arima, M. Otaka, H. Otomo, D. Yamashita, K. Kamataki, K. Koga, M. Shiratani, T. Shindo, S. Tanaka, T. Matsudo

    The 6th Asian Applied Physics Conference (Asian-APC)  2021.12 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Sputtering deposition of single crystalline ZnO films on sapphire substrates via inverted Stranski-Krastanov mode: effects of RF power International conference

    R. Mitsuishi, D. Takahashi, D. Yamashita, T. Okumura, N. Yamashita, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    The 6th Asian Applied Physics Conference (Asian-APC)  2021.12 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • プラズマ照射した植物の発芽・生長の分子機構検討(招待講演) Invited

    古閑一憲

    プラズマ・核融合学会 第38回年会  2021.11 

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    Event date: 2021.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • 植物照射用スケーラブル誘電体バリア放電の生成粒子の計測

    古閑一憲,田川雄大,中尾匠,阿南輝樹,田中颯,奥村賢直,P. Attri,鎌滝晋礼,板垣奈穂,白谷正治,坪山祥子,橋本研志,朽津和幸

    プラズマ・核融合学会 第38回年会  2021.11 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • 種子に導入された大気圧空気プラズマ起因活性種の高感度微量定量測定法の創成

    奥村賢直,パンカジアトリ,古閑一憲,鎌滝晋礼,板垣奈穂,白谷正治

    プラズマ・核融合学会 第38回年会  2021.11 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Better step coverage of TEOS-PECVD SiO2 films realized by amplitude modulation of RF discharge voltage International conference

    K. Kamataki, K. Abe, A. Yamamoto, I. Nagao, M. Otaka, D. Yamashita, N. Itagaki, T. Okumura, K. Koga, M. Shiratani, S. Tahara, Y. Mizokami, Y. Miyata, K. Tabuchi, T. Tanikuni, S. Hiyama, K. Nagahata

    42nd International Symposium on Dry Process (DPS2021)  2021.11 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Reduction of compressive stress of hydrogenated amorphous carbon films by inserting carbon nanoparticle layer using plasma CVD International conference

    S. H. Hwang, S. Ono, T. Okumura, K. Koga, K. Kamataki, N. Itagaki, M. Shiratani, J.-S. Oh, S. Takabayashi, T. Nakatani

    42nd International Symposium on Dry Process (DPS2021)  2021.11 

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    Event date: 2021.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Study of effect of amplitude modulated discharge on growth of nanoparticles in TEOS plasma International conference

    M. Shiratani, K. Kamataki, K. Abe, A. Yamamoto, I. Nagao, M. Otaka, D. Yamashita, N. Itagaki, T. Okumura, K. Koga

    42nd International Symposium on Dry Process (DPS2021)  2021.11 

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    Event date: 2021.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Energy utilization efficiency in CO2 methanation with plasma catalysis International conference

    S. Toko, M. Ideguchi, T. Hasegawa, K. Kamataki, K. Takenaka, K. Koga, M. Shiratani, Y. Setsuhara

    42nd International Symposium on Dry Process (DPS2021)  2021.11 

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    Event date: 2021.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Restoring germination rate of heat-stressed seeds by low temperature plasma treatment International conference

    M. Shiratani, K. Koga

    Japan-RUB Workshop  2021.12 

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    Event date: 2021.10 - 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Low-stress diamond-like carbon films containing carbon nanoparticles produced by combining rf sputtering and plasma chemical vapor deposition International conference

    S. H. Hwang, S. Ono, D. Yoshikawa, T. Okumura, K. Kamataki, N. Itagaki, K. Koga, T. Nakatani, M. Shiratani

    Japan-RUB Workshop  2021.11 

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    Event date: 2021.10 - 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Molecular Analysis of Plasma-Induced Germination Improvement of Rice Seeds With High-Temperature Stress Damage International conference

    K. Koga, Y. Ishibashi, C. Suriyasak, T. Okumura, H. Tanaka, P. Attri, K. Matsuo, D. Yamashita, N. Itagaki, K. Kamataki, M. Shiratani

    AVS67  2021.10 

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    Event date: 2021.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン  

  • Transport of Nanoparticles in Afterglow Region Using Multi-Hollow Discharge Plasma CVD International conference

    K. Koga, S. H. Hwang, P. Attri, K. Kamataki, N. Itagaki, M. Shiratani

    74th Annual Gaseous Electronics Conference  2021.10 

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    Event date: 2021.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン  

  • Effect of plasma treatment on MDM2 and p53 expression in cancer cells International conference

    P. Attri,H. Kurita, T. Okumura, K. Koga, M. Shiratani

    5th Asia-Pacific Conference on Plasma Physics  2021.9 

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    Event date: 2021.9 - 2021.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Study on measurement of strength and fluctuation of electrical field using optical trapped particle in Ar plasma International conference

    K. kamataki, S. Okunaga, T. Sato, K. Tomita, P. Yimin, D. Yamashita, T. Okumura, N. Itagaki, K. Koga, M. Shiratani

    5th Asia-Pacific Conference on Plasma Physics  2021.9 

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    Event date: 2021.9 - 2021.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Suppression of nanoparticle growth in TEOS plasma by amplitude modulation discharge method International conference

    K. Abe, A.Yamamoto, I.Nagao, M.Otaka, D.Yamashita, K.Kamataki, T.Okumura, N.Itagaki, K.Koga, M.Shiratani

    5th Asia-Pacific Conference on Plasma Physics  2021.9 

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    Event date: 2021.9 - 2021.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • スケーラブル誘電体バリア放電プラズマで発生した活性種量評価

    中尾匠, 阿南輝樹, 田中颯, 奥村賢直, P. Attri, 鎌滝晋礼, 古閑一憲, 板垣奈穂, 白谷正治

    第74回電気・情報関係学会九州支部連合大会  2021.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • スケーラブル誘電体バリア放電プラズマの特性評価

    田川雄大, 奥村賢直, 鎌滝晋礼, P. Attri, 古閑一憲, 板垣奈穂, 白谷正治

    第74回電気・情報関係学会九州支部連合大会  2021.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • 反応性プラズマを用いたナノ粒子の成長制御とその応用展開(招待講演) Invited

    古閑一憲

    化学工学会第52回秋季大会  2021.9 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:岡山大学 津島キャンパス   Country:Japan  

  • インジウム・スズ酸化物ナノ粒子の経気道性曝露による生体影響

    田中昭代, 松村渚, 田中佑樹, 小椋康光, 古閑一憲, 白谷正治, 長野嘉介

    第62回大気環境学会  2021.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • 2D electric field measurements in Ar plasmas using a fine particle trapped with optical tweezers International conference

    S. Okunaga, K. Kamataki, K. Tomita, Y. Pan, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    Plathinium 2021  2021.9 

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    Event date: 2021.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:France  

  • Relation between CH4 yield and CO emission intensity gradient in plasma-assisted CO2 methanation International conference

    M. Ideguchi, T. Hasegawa, K. Kamataki, S. Toko, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    Plathinium 2021  2021.9 

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    Event date: 2021.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:France  

  • Epitaxial growth of (ZnO)X(InN)1-X films by magnetron sputtering: effects of surface polarity of ZnO substrates International conference

    R. Narishige, D. Yamashita, K. Kamataki, T. Okumura, K. Koga, M. Shiratani, N. Itagaki

    Plathinium 2021  2021.9 

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    Event date: 2021.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:France  

  • 窒素添加スパッタ法による高移動度アモルファスIn2O3:Sn薄膜の高温成膜

    御堂雄大, 山下大輔, 奥村賢直, 鎌滝晋礼, 古閑一憲, 白谷正治, 板垣奈穂

    第82回応用物理学会秋季学術講演会  2021.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • プラズマ触媒反応において触媒が二酸化炭素リサイクリングのエネルギーコストに与える影響

    都甲将, 出口雅志, 長谷川大樹, 鎌滝晋礼, 竹中弘祐, 古閑一憲, 白谷正治, 節原裕一

    第82回応用物理学会秋季学術講演会  2021.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • 振幅変調放電プラズマ中の光捕捉微粒子の挙動に関する研究

    鎌滝晋礼, 奥永冴京, 佐藤斗真, 富田健太郎, Pan Yiming, 山下大輔, 板垣奈穂, 古閑一憲, 白谷正治

    第82回応用物理学会秋季学術講演会  2021.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Ar+CH4平行平板型プラズマCVDで作製したカーボンナノ粒子サイズに対するガス圧力の効果

    古閑一憲, 黄成和, 小野晋次郎, 奥村賢直, 鎌滝晋礼, 板垣奈穂, 鷹林将, 呉準席, 中谷達行, 白谷正治

    第82回応用物理学会秋季学術講演会  2021.9 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • 液体クロマトグラフ-トリプル四重極質量分析計を用いたプラズマ照射種子内植物ホルモンの定量分析

    奥村賢直, アトリ パンカジ, 古閑一憲, 鎌滝晋礼, 板垣奈穂, 白谷正治

    第82回応用物理学会秋季学術講演会  2021.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Cold Plasma induced structural modification of NADPH oxidase activator (Noxa 1) by oxidative stress

    P. Attri, T. Okumura. K. Koga, M. Shiratani

    第82回応用物理学会秋季学術講演会  2021.9 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • マグネトロンスパッタリング法で作製した(ZnO)x(InN)1-x膜の表面モフォロジーに及ぼす基板極性の影響

    成重椋太, 山下大輔, 鎌滝晋礼, 奥村賢直, 古閑一憲, 白谷正治, 板垣 奈穂

    第82回応用物理学会秋季学術講演会  2021.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • ZnONバッファー層を用いたサファイア基板上への単結晶Zn1-xMgxO薄膜の成長

    高橋大智, 山下大輔, 奥村賢直, 鎌滝晋礼, 古閑一憲, 白谷正治, 板垣奈穂

    第82回応用物理学会秋季学術講演会  2021.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Effects of Carbon Nanoparticles Inserted between Two Diamond Like Carbon Layers Films on Residual Stress of Films Deposited by Plasma Chemical Vapor Deposition International conference

    S. H. Hwang, S. Ono, T. Okumura, K. Kamataki, N. Itagaki, K. Koga, T. Nakatani, M. Shiratani

    INTERFINISH 2020  2021.9 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Production of Hollow Carbon Nanoparticles using Multi-Hollow Discharge Plasma CVD(Invited) Invited International conference

    K. Koga, S. H. Hwang, T. Okumura, P. Attri, K. Kamataki, N. Itagaki, J. S. Oh, S. Takabayashi, T. Nakatani, M. Shiratani

    INTERFINISH 2020  2021.9 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • 容量結合型プラズマ化学気相堆積法を用いて製膜された水素化アモルファスカーボン膜(a-C:H)の構造解析

    小野晋次郎, 黄成和, 奥村賢直, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    第15回プラズマエレクトロニクスインキュベーションホール  2021.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Comparative study on the decontamination of water using non-thermal atmospheric pressure plasma and gamma irradiation Invited International conference

    P.Attri, T. Okumura, K. Koga, M. Shiratani

    APA Bioforum2021: Polymeric Biomaterials & Bioengineering  2021.8 

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    Event date: 2021.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:India  

  • Influence of Cold Atmospheric Plasma on NADPH Oxidase 1 (NOX1) Enzyme and Membrane Protein Structures: A Combined Experimental and Computational Study International conference

    P. Attri, K. Koga, A. Bogaerts, W. Lee, M. Shiratani

    8th International Conference on Plasma Medicine(icpm)  2021.8 

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    Event date: 2021.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Korea, Republic of  

  • スパッタ法によるサファイア基板上への原子平坦なZnMgO薄膜の作製

    髙橋大智, 山下大輔, 奥村賢直, 鎌滝晋礼, 古閑一憲, 白谷正治, 板垣奈穂

    令和3年度日本表面真空学会九州支部学術講演会  2021.6 

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    Event date: 2021.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • レタス種子表面状態に対する種子内水分およびプラズマ照射の影響

    阿南輝樹, 田中颯, 山下大輔, 奥村賢直, Pankaj Attri, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治, 石橋勇志, 藤本祉史, 熊内雅人, 松井英享

    令和3年度日本表面真空学会九州支部学術講演会  2021.6 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Particle-In-Cell モンテカルロ衝突モデルによる容量結合型Arプラズマにおける下部バイアス電圧印加シミュレーション

    阿部滉平, 山本晃大, 長尾伊織, 大高真寛, 山下大輔, 鎌滝晋礼, 奥村賢直, 板垣奈穂, 古閑一憲, 白谷正治

    令和3年度日本表面真空学会九州支部学術講演会  2021.6 

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    Event date: 2021.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • 容量結合プラズマ触媒法を用いたサバティエ反応プラズマパラメータがCO2変換率に与える影響

    長谷川大樹, 出口雅志, 山下大輔, 都甲将, 鎌滝晋礼, 古閑一憲, 白谷正治

    令和3年度日本表面真空学会九州支部学術講演会  2021.6 

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    Event date: 2021.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • 窒素添加スパッタ法による高移動度アモルファス In2 O3 :Sn 薄膜の作製

    御堂雄大, 山下大輔, 奥村賢直, 鎌滝晋礼, 古閑一憲, 白谷正治, 板垣奈穂

    令和3年度日本表面真空学会九州支部学術講演会  2021.6 

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    Event date: 2021.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • (ZnO)x (InN)1-x 膜のスパッタエピタキシーに及ぼす基板表面極性の影響

    成重椋太, 山下大輔, 鎌滝晋礼, 奥村賢直, 古閑一憲, 白谷正治, 板垣奈穂

    令和3年度日本表面真空学会九州支部学術講演会  2021.6 

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    Event date: 2021.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Ambient radiant energy source for powering IoT devices Invited International conference

    M. Shiratani, F. L. Chawarambwa, T. E. Putri, K. Koga, K. Kamataki, M. Son, H. Seo

    Thermec2021  2021.6 

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    Event date: 2021.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Austria  

  • Structure control ofa:C-H film nanocomposite using a combination of rf sputtering and plasma CVD(Invited) Invited International conference

    K. Koga, S. H. Hwang, K. Kamataki, P. Attri, N. Itagaki, M. Shiratani

    Thermec2021  2021.6 

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    Event date: 2021.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Austria  

  • Arプラズマ中の光捕捉微粒子への作用力の研究

    鎌滝晋礼,奥永冴京, 岩本 亮介, 富田 健太郎, P.Yiming, 山下大輔, 板垣奈穂, 古閑一憲, 白谷 正治

    第68回応用物理学会春季学術講演会  2021.3 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • マグネトロンスパッタリング法による(ZnO)x(InN)1-x膜のエピタキシャル成長:基板の面極性の影響

    成重椋太, 金島健太郎, 浦川 聖一, 山下大輔, 鎌滝晋礼, 奥村賢直, 古閑一憲, 白谷正治, 板垣奈穂

    応用物理学会プラズマエレクトロニクス分科会30周年記念シンポジウム  2021.3 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • ナノ粒子取り込みによる SiNx の低温プラズマ CVD 製膜

    佐々木勇輔, 吉田知晃, 阿部滉平, 山本晃大, 鎌滝晋礼, 奥村賢直, 板垣奈穂, 古閑一憲, 白谷正治

    応用物理学会プラズマエレクトロニクス分科会30周年記念シンポジウム  2021.3 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • 任意波形励起プラズマ CVD 法による a-C:H 膜質の制御

    岩本亮介, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治, 進藤崇央, 田中諭志, 松土龍夫

    応用物理学会プラズマエレクトロニクス分科会30周年記念シンポジウム  2021.3 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • かいわれ大根種子の発芽と発芽の成長に対する大気圧プラズマ照射の影響-種子の色と貯蔵の効果

    奥村賢直, アトリパンカジ, 石川健治, 古閑一憲, 白谷正治, ヴィダミルダズィネ

    第68回応用物理学会春季学術講演会  2021.3 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Electric Field Measurements in Ar plasmas using a Fine Particle Trapped with Optical Tweezers International conference

    S. Okunaga, K. Kamataki, K. Tomita, P. Yimin, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    ISPlasma2021/IC-PLANTS2021  2021.3 

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    Event date: 2021.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • 調湿レタス種子の発芽に及ぼす大気圧プラズマ照射の影響

    奥村 賢直, 阿南 輝樹, 田中 颯, 有田 涼, 山下 大輔, アトリ パンカジ, 鎌滝 晋礼, 板垣 奈穂, 古閑 一憲, 白谷 正治, 藤本 祉史, 熊内 雅人, 松井 英享, 石橋 勇志

    SPP-38/SPSM33  2021.1 

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    Event date: 2021.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Effects of Concentrated Light on the Performance and Stability of Quasi-Solid Electrolytes in Dye-Sensitized Solar Cells International conference

    F. L. Chawarambwa, P. Attri, K. Koga, M. Shiratani

    ICMAP 2020 & ISFM 2020  2021.1 

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    Event date: 2021.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Korea, Republic of  

  • Effects of surface polarity of ZnO substrates on epitaxial growth of magnetron sputtered (ZnO)x(InN)1-x films International conference

    R. Narishige, K. Kaneshima, S. Urakawa, D. Yamashita, K. Kamataki, T. Okumura, K. Koga, M. Shiratani, N. Itagaki

    ICMAP 2020 & ISFM 2020  2021.1 

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    Event date: 2021.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Korea, Republic of  

  • Sputter deposition of low resistive amorphous In2O3:Sn films using nitrogen mediate amorphization method: Effects of nitrogen flow rate International conference

    Y. Mido, S. Urakawa, D. Yamashita, T. Okumura, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    ICMAP 2020 & ISFM 2020  2021.1 

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    Event date: 2021.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Korea, Republic of  

  • Structural and Optical Properties of ZnMgO Films on Sapphire Substrates Fabricated by Sputter Epitaxy International conference

    D. Takahashi, Y. Nakamura, S. Urakawa, D. Yamashita, T. Okumura, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    ICMAP 2020 & ISFM 2020  2021.1 

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    Event date: 2021.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Korea, Republic of  

  • Applications of Low Temperature Plasma to Agriculture in Preharvest Stage (Invited) Invited International conference

    M. Shiratani, P.Attri, T. Okumura, K. Koga

    ICMAP 2020 & ISFM 2020  2021.1 

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    Event date: 2021.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Korea, Republic of  

  • Impact of surface morphologies of 3D island layers on the single crystal growth of magnetron sputtered ZnO films International conference

    Y. Nakamura, M. Kikuchi, D. Yamashita, K. Kamataki, T. Okumura, K. Koga, M. Shiratani, N. Itagak

    ICMAP 2020 & ISFM 2020  2021.1 

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    Event date: 2021.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Korea, Republic of  

  • Growth of high-quality (ZnO)x(InN)1-x films by RF magnetron sputtering using a two-step growth process International conference

    K. Kaneshima, S. Urakawa, R. Narishige, D. Yamashita, T. Okumura, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    ICMAP 2020 & ISFM 2020  2021.1 

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    Event date: 2021.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Korea, Republic of  

  • Sputter deposition of ZnAlO films with tunable bandgaps from 3.4 to 6.1 eV International conference

    S. Urakawa, K. Kaneshima, R. Narishige, D. Yamashita, T. Okumura, K. Kamataki, K. Koga, M. shiratani, N. Itagaki

    ICMAP 2020 & ISFM 2020  2021.1 

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    Event date: 2021.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Korea, Republic of  

  • Low temperature fabrication of SiO2 films using capacitively coupled TEOS plasma International conference

    Y. Sasaki, T. Yoshida, K. Abe, K. Yamamoto, K. Kamataki, T. Okumura, N. Itagaki, K. Koga, M. Shiratani

    The 21st Workshop on Fine Particle Plasmas  2020.12 

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    Event date: 2020.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Study on Film Deposition Process using Spatial Profiles of Plasma Parameters and Nanoparticles in Reactive Plasma International conference

    K. Kamataki, T. Yoshida, Y. Sasaki, K. Abe, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    The 21st Workshop on Fine Particle Plasmas  2020.12 

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    Event date: 2020.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • ITO薄膜のスパッタ製膜プロセスへの機械学習の適用

    陳飛宇, 岩本亮介, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    令和2年度プラズマ・核融合学会 九州・沖縄・山口支部 第24回支部大会  2020.12 

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    Event date: 2020.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • PIC-MCCMを用いたCCPにおけるIEDに関する研究

    阿部滉平, 陶陽, 岩本亮介, 佐々木勇輔, 吉田知晃, 山下大輔, 鎌滝晋礼, 奥村賢直, 板垣奈穂, 古閑一憲, 白谷正治

    令和2年度プラズマ・核融合学会 九州・沖縄・山口支部 第24回支部大会  2020.12 

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    Event date: 2020.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • レタス種子の発芽特性に及ぼす調湿・プラズマ照射時間依存性

    阿南輝樹, 田中颯, 有田涼, 山下大輔, 奥村賢直, アトリ パンカジ, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治, 石橋勇志, 藤本祉史, 熊内雅人, 松井英享

    令和2年度プラズマ・核融合学会 九州・沖縄・山口支部 第24回支部大会  2020.12 

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    Event date: 2020.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • アルゴンプラズマ中光捕捉微粒子への作用力の校正

    奥永 冴京, 鎌滝 晋礼, 富田 健太郎, Pan Yiming, 山下 大輔, 板垣 奈穂, 古閑 一憲, 白谷 正治,

    令和2年度プラズマ・核融合学会 九州・沖縄・山口支部 第24回支部大会  2020.12 

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    Event date: 2020.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • PECVD における任意電圧波形を用いた a-C:H 成膜

    永松大樹, 岩本亮介, 山下大輔, 鎌滝晋礼, 古閑一憲, 白谷正治, 進藤崇央, 田中諭志, 松土龍夫

    令和2年度プラズマ・核融合学会 九州・沖縄・山口支部 第24回支部大会  2020.12 

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    Event date: 2020.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • CCPにおける径方向電場Eyの計測の試み

    陶陽, 岩本亮介, 阿部滉平, 鎌滝晋礼, 山下大輔, 奥村賢直, 板垣奈穂, 古閑一憲, 白谷正治

    令和2年度プラズマ・核融合学会 九州・沖縄・山口支部 第24回支部大会  2020.12 

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    Event date: 2020.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • スパッタエピタキシー法による(ZnO)X(InN)1-X膜の作製: 高温バッファー層の効果

    寺澤寛, 金島健太郎, 成重椋太, 山下大輔, 奥村賢直, 鎌滝晋礼, 古閑一憲, 白谷正治, 板垣奈穂

    令和2年度プラズマ・核融合学会 九州・沖縄・山口支部 第24回支部大会  2020.12 

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    Event date: 2020.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Ar/N2スパッタリングによるサファイア基板上へのZnO単結晶成長:O-poorバッファー層の効果

    松本翔剛, 髙橋大智, 中村優太, 山下大輔, 奥村賢直, 鎌滝晋礼, 古閑一憲, 白谷正治, 板垣奈穂

    令和2年度プラズマ・核融合学会 九州・沖縄・山口支部 第24回支部大会  2020.12 

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    Event date: 2020.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Ar+CH4 マルチホロー放電プラズマCVDで作製したカーボンナノ粒子のフラックスに対する熱泳動力の効果

    郝源, 𠮷川大智, 黄成和, 古閑一憲, 白谷正治, 鎌滝晋礼, 板垣奈穂, 奥村賢直

    令和2年度プラズマ・核融合学会 九州・沖縄・山口支部 第24回支部大会  2020.12 

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    Event date: 2020.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • プラズマ CVD におけるナノ粒子成長とプラズマ生成の関係

    吉田知晃, 阿部滉平, 佐々木勇輔, 山本晃大, 山下大輔, 奥村賢直, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    令和2年度プラズマ・核融合学会 九州・沖縄・山口支部 第24回支部大会  2020.12 

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    Event date: 2020.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • TEOSプラズマCVDを用いたSiO2膜の形成:基板バイアス電圧依存性

    山本晃大, 吉田智晃, 阿部滉平, 佐々木勇輔, 山下大輔, 奥村賢直, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    令和2年度プラズマ・核融合学会 九州・沖縄・山口支部 第24回支部大会  2020.12 

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    Event date: 2020.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • 容量結合プラズマCVD法によるSiO2膜の低温製膜

    佐々木勇輔, 吉田知晃, 阿部滉平, 山本晃大, 鎌滝晋礼, 奥村賢直, 板垣奈穂, 古閑一憲, 白谷正治

    令和2年度プラズマ・核融合学会 九州・沖縄・山口支部 第24回支部大会  2020.12 

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    Event date: 2020.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • 容量結合プラズマ触媒法によるサバティエ反応:圧力依存性

    長谷川大樹, 出口雅志, 都甲将, 山下大輔, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    令和2年度プラズマ・核融合学会 九州・沖縄・山口支部 第24回支部大会  2020.12 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Impact of Plasma Treatment on the binding of C-terminal Domain of SARS-CoV-2 Spike Protein with Human Angiotensin-Converting Enzyme 2 (hACE2) International conference

    P. Attri, K. Koga, T. Okumura, K. Kamataki, N. Itagaki, M. Shiratani

    第30回日本MRS年次大会  2020.12 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Experimental identification of key species for ROS transportation in the depth direction by plasma irradiation International conference

    T. Kawasaki, K. Koga, M. Shiratani

    第30回日本MRS年次大会  2020.12 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Nitric Acid Generation by Pulsed Needle-water Discharge Plasma International conference

    H. Tanaka, R. Kogawa, Y. Oba, M. Fujita, T. Okumura, P. Attri, K. Koga, M. Shiratani, K. Kamataki, N. Itagaki

    第30回日本MRS年次大会  2020.12 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Growth of Rice Cultivated in Field from Plasma-irradiated Seeds and Its Health Assessment for rats International conference

    T. Okumura, H. Tanaka, R. Arita, D. Yamashita, K. Matsuo, P. Attri, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    第30回日本MRS年次大会  2020.12 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • プラズマ触媒法を用いたCO2のCH4化反応におけるプラズマ発光強度の空間分布

    出口雅志, 山下大輔, 都甲将, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    第37回 プラズマ・核融合学会 年会  2020.12 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • プラズマCVDにおけるナノ粒子成長とプラズマ生成の関係

    白谷正治, 古閑一憲, 鎌滝晋礼, 吉田知晃, 佐々木勇輔, 阿部滉平

    第37回 プラズマ・核融合学会 年会  2020.12 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Sputter deposition of low resistive amorphous In2O3:Sn films using impurity mediate amorphization method: Effects of substrate temperature International conference

    Y. Midou, S. Urakawa, D. Yamashita, T. Okumura, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    The 5t h Asian Applied Physics Conference (Asian-APC)  2020.11 

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    Event date: 2020.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Effects of substrate surface polarity on epitaxial growth of magnetron sputtered (ZnO)x(InN)1-xfilms International conference

    R. Narishige, K. Kaneshima, D. Yamashita, K. Kamataki,T. Okumura, K. Koga, M. Shiratani, N. Itagaki

    The 5t h Asian Applied Physics Conference (Asian-APC)  2020.11 

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    Event date: 2020.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • プラズマ触媒メタン化におけるメタン収率とプラズマ発光強度空間分布の関係

    出口雅志,長谷川 大樹,山下 大輔,鎌滝 晋礼,板垣 奈穂,古閑 一憲,白谷 正治,都甲 将,寒川 誠二

    2020年(令和2年度 )応用物理学会九州支部学術講演会  2020.11 

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    Event date: 2020.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Bandgap Tuning of ZnMgO Films on Sapphire Substrates Fabricated by Sputter Epitaxy International conference

    D. Takahashi, Y. Nakamura, S. Urakawa, D. Yamashita,T. Okumura, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    The 5t h Asian Applied Physics Conference (Asian-APC)  2020.11 

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    Event date: 2020.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Development of Highly Efficient and Stable Quasi-Solid Electrolytes for Dye-Sensitized solar Cells International conference

    F. L. Chawarambwa, K. Kamataki , K. Koga , M. Shiratani

    The 5t h Asian Applied Physics Conference (Asian-APC)  2020.11 

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    Event date: 2020.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Effect of Concave Concentrator and Plane Reflector Mirror to Increase Efficiency of Bifacial Dye-Sensitized Solar Cells International conference

    T. E. Putri, F. L. Chawarambwa, H. Seo, Min-Kyu Son, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    The 5t h Asian Applied Physics Conference (Asian-APC)  2020.11 

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    Event date: 2020.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • インジウム・スズ酸化物ナノ粒子曝露による臓器障害

    田中 昭代, 松村 渚, 田中 佑樹, 小椋 康光, 古閑 一憲, 白谷 正治

    生命金属に関する合同年会2020(ConMetal 2020)  2020.11 

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    Event date: 2020.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Information on electric field deduced using a fine particle trapped with laser tweezers in Ar plasma International conference

    K. Kamataki, S. Okunaga, K. Tomita, D. Yamashita, T. Okumura, N. Itagaki, K. Koga, M. Shiratani

    The 73rd Annual Gaseous Electronics Conference  2020.10 

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    Event date: 2020.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン  

  • プラズマ触媒反応系における触媒のCO2生成反応への影響

    都甲将, 寒川誠二, 出口雅志, 鎌滝晋礼, 古閑一憲, 白谷正治

    第81回応用物理学会秋季学術講演会  2020.9 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • 高温障害を持つイネ種子の発芽特性へ及ぼす誘電体バリア放電プラズマ照射の影響

    奥村 賢直, 石橋 勇志, C. Suriyasak, 田中 颯, 佐藤 僚哉, 有田 涼, 廣松 真弥, 古閑 一憲, P. Attri, 松尾 かよ, 山下 大輔, 板垣 奈穂, 鎌滝 晋礼,白谷 正治

    第81回応用物理学会秋季学術講演会  2020.9 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • 光ピンセットによる捕捉微粒子を用いたアルゴンプラズマの等電場面計測

    奥永冴京, 岩本亮介, 鎌滝晋礼, 富田健太郎, PanYiming, 山下大輔, 板垣奈穂, 古閑一憲, 白谷正治

    第81回応用物理学会秋季学術講演会  2020.9 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • メタンプラズマCVDを用いたホローカーボンナノ粒子のワンステップ作製

    Y. Hao, S. H. Hwang, 古閑一憲, 鎌滝晋礼, 板垣奈穂, 中谷達行, 白谷正治

    第81回応用物理学会秋季学術講演会  2020.9 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • 低温環境下におけるプラズマCVDによる高品質保護膜の作製

    鎌滝晋礼, 吉田知晃, 佐々木勇輔, 阿部滉平, 岩本亮介, 山下大輔, 奥村賢直, 板垣奈穂, 古閑一憲, 白谷正治

    日本物理学会 2020年秋季大会  2020.9 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • プラズマ誘起欠陥の発生と修復~結晶シリコンの表面パッシベーションへの影響~

    布村正太, 坂田功 ,榊田 創, 古閑 一憲, 白谷 正治

    第81回応用物理学会秋季学術講演会  2020.9 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • 低温成膜における反応性プラズマ中のナノ粒子制御

    鎌滝晋礼, 吉田知晃, 阿部滉平, 佐々木勇輔, 永石翔大, 岩本亮介, 山下大輔, 板垣奈穂, 古閑一憲, 白谷正治

    日本物理学会第75回年次大会(2020年)  2020.3 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  • プラズマ照射したカイワレ種⼦の吸⽔の時間推移評価

    石川健治, P. Attri, 奥村賢直, 古閑⼀憲, 有田涼, 佐藤僚哉, 田中颯, 廣松真弥, 松尾かよ, 山下大輔, 鎌滝晋礼, 板垣奈穂, 堀勝, 白谷正治

    第67回応用物理学会春季学術講演会  2020.3 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:上智大学   Country:Japan  

  • 光ピンセットによるプラズマ中捕捉微粒⼦の揺動スペクトル解析

    鎌滝晋礼, 奥永冴京, 岩本亮介, 富田健太郎, 山下⼤輔, 板垣奈穂, 古閑一憲, 白谷正治

    第67回応用物理学会春季学術講演会  2020.3 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:上智大学   Country:Japan  

  • Effects of substrates on the epitaxial growth of (ZnO)x(InN)1-x films International conference

    R. Narishige, K. Kaneshima, D. Yamashita, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    ISPlasma2020/IC-PLANTS2020  2020.3 

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    Event date: 2020.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya University   Country:Japan  

  • Methane production for energy storage using low temperature plasma (Invited) Invited International conference

    M. Shiratani, M. Ideguchi, A. Yamamoto, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga

    7th Korea-Japan Joint Symposium on Advanced Solar Cells 2020, 4th International Symposium on Energy Research and Application  2020.1 

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    Event date: 2020.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sungkyunkwan University, Suwon   Country:Korea, Republic of  

  • Low temperature fabrication of passivation films by plasma enhanced CVD Invited International conference

    K. Kamataki, Y. Sasaki, S. Nagaishi, T. Yoshida, K. Abe, H. Hara, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    7th Korea-Japan Joint Symposium on Advanced Solar Cells 2020, 4th International Symposium on Energy Research and Application  2020.1 

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    Event date: 2020.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sungkyunkwan University, Suwon   Country:Korea, Republic of  

  • Effects of Activated Carbon Counter Electrode On Bifacial Dye Sensitized Solar Cells (DSSCs) International conference

    T. E. Putri, Y. Hao, F. L. Chawarambwa, H. Seo, Min-Kyu Son, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    7th Korea-Japan Joint Symposium on Advanced Solar Cells 2020, 4th International Symposium on Energy Research and Application  2020.1 

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    Event date: 2020.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sungkyunkwan University, Suwon   Country:Korea, Republic of  

  • Si3N4/Carbon based PEDOT:PSS Counter Electrode for low-cost Dye-Sensitized Solar Cells International conference

    F. L. Chawarambwa, T. E. Putri, Y. Hao, H. Seo, Min-Kyu Son, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    7th Korea-Japan Joint Symposium on Advanced Solar Cells 2020, 4th International Symposium on Energy Research and Application  2020.1 

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    Event date: 2020.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sungkyunkwan University, Suwon   Country:Korea, Republic of  

  • TEOS プラズマ CVD による SiO2製膜と膜質の温度勾配依存性

    吉田知晃, 阿部滉平, 佐々木勇輔, 山下大輔, 板垣奈穂, 鎌滝晋礼, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第23回支部大会  2019.12 

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    Event date: 2019.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:B-ConPlaza, 別府   Country:Japan  

  • プラズマ照射したカイワレダイコン種子の発芽促進機構-吸水時の種子内ラジカル動態-

    有田涼, 田中颯, 廣松真弥, 佐藤僚哉, 松尾かよ, 山下大輔, 板垣奈穂, 鎌滝晋礼, Pankaj Attri, 石川健治, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第23回支部大会  2019.12 

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    Event date: 2019.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:B-ConPlaza, 別府   Country:Japan  

  • イネ種子に対するプラズマ照射効果のフィールドテスト

    田中颯, 有田涼, 廣松真弥, 佐藤僚哉, 松尾かよ, 山下大輔, 板垣奈穂, 鎌滝晋礼, Pankaj Attri, 石川健治, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第23回支部大会  2019.12 

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    Event date: 2019.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:B-ConPlaza, 別府   Country:Japan  

  • レタス幼苗重量分布に対する種子エイジングとプラズマ照射の効果

    廣松真弥, 有田涼, 田中颯, 佐藤僚哉, 松尾かよ, 山下大輔, 板垣奈穂, 鎌滝晋礼, Pankaj Attri, 石川健治, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第23回支部大会  2019.12 

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    Event date: 2019.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:B-ConPlaza, 別府   Country:Japan  

  • パルス変調プラズマ触媒法による二酸化炭素のメタン化

    出口雅志, 山本瑛久, 山下大輔, 板垣奈穂, 鎌滝晋礼, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第23回支部大会  2019.12 

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    Event date: 2019.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:B-ConPlaza, 別府   Country:Japan  

  • 光ピンセットによる微粒子トラップを用いたアルゴンプラズマ電場の精密測定

    奥永冴京, 岩本亮介, 鎌滝晋礼, 富田健太郎, 山下大輔, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第23回支部大会  2019.12 

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    Event date: 2019.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:B-ConPlaza, 別府   Country:Japan  

  • 反応性プラズマのAM変調における発光強度分布

    阿部滉平, 吉田知晃, 佐々木勇輔, 山下大輔, 板垣奈穂, 鎌滝晋礼, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第23回支部大会  2019.12 

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    Event date: 2019.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:B-ConPlaza, 別府   Country:Japan  

  • Measurements of Electrostatic Potential in RF Ar Plasma Using an Optically Trapped Fine Particle International conference

    M. Shiratani, R. Iwamoto, S. Okunaga, K. Kamataki, N. Itagaki, K. Koga

    20th Workshop on Fine Particle Plasmas  2019.12 

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    Event date: 2019.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:National Institute of Fusion Science, Gifu   Country:Japan  

  • Fabrication of high nitriding and low hydrogen content SiN films at 100°C by controlling cluster formation in plasma International conference

    S. Nagaishi, Y. Sasaki, K. Kamataki, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    20th Workshop on Fine Particle Plasmas  2019.12 

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    Event date: 2019.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:National Institute of Fusion Science, Gifu   Country:Japan  

  • Tuning Parameters of Indium Tin Oxide Sputter Processing via Bayesian Optimization International conference

    R. Iwamoto, S. Okunaga, S. Muraoka, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    20th Workshop on Fine Particle Plasmas  2019.12 

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    Event date: 2019.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:National Institute of Fusion Science, Gifu   Country:Japan  

  • Apparent Activation Energy of Sabatier Reaction in Low Pressure Plasma-Catalyst Gas Conversion International conference

    M. Shiratani, S. Tanida, S. Toko, A. Yamamoto, K. Koga

    Materials Research Meeting 2019 (MRM2019)  2019.12 

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    Event date: 2019.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Symposia   Country:Japan  

  • Developing Prediction of Amorphization Condition Models from Sputter Deposition Experimental Results by Machine Learning Method International conference

    K. Kamataki, R. Iwamoto, S. Okunaga, S. Muraoka, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    Materials Research Meeting 2019 (MRM2019)  2019.12 

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    Event date: 2019.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Symposia   Country:Japan  

  • Effects of higher-order silane molecules on Si-H2 bond and Si-H bond densities in a-Si:H films International conference

    H. Hara, Y. Hao, K. Abe, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Materials Research Meeting 2019 (MRM2019)  2019.12 

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    Event date: 2019.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Symposia   Country:Japan  

  • Effects of Pulse Bias Voltage on Characteristics of a-C:H Film Deposited by High Pressure Ar+CH4 Plasma CVD Process International conference

    S. H. Hwang, R. Iwamoto, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Materials Research Meeting 2019 (MRM2019)  2019.12 

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    Event date: 2019.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Symposia   Country:Japan  

  • Investigation of Impact of Plasma Fluctuation Driven by Amplitude Modulated VHF Discharge on Growth of Nanoparticles in Reactive Plasma (Invited) Invited International conference

    K. Kamataki, R. Iwamoto, H. Tanaka, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    Materials Research Meeting 2019 (MRM2019)  2019.12 

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    Event date: 2019.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Symposia   Country:Japan  

  • ZnO Based Semiconductors for Excitonic Devices (Invited) Invited International conference

    N. Itagaki, K. Kamataki, K. Koga, M. Shiratani

    Materials Research Meeting 2019 (MRM2019)  2019.12 

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    Event date: 2019.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Symposia   Country:Japan  

  • Sputtering Deposition with Impurities: Another Key Parameter to Control Film Structures (Invited) Invited International conference

    N. Itagaki, K. Kamataki, K. Koga, M. Shiratani

    Materials Research Meeting 2019 (MRM2019)  2019.12 

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    Event date: 2019.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Symposia   Country:Japan  

  • 低温低圧プラズマと触媒を用いた二酸化炭素のメタン化率とCO発光強度の相関

    山本瑛久, 出口雅史, 山下大輔, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    第36回プラズマ・核融合学会年会  2019.12 

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    Event date: 2019.11 - 2019.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:中部大学   Country:Japan  

  • 不純物添加アモルファス化法による低抵抗アモルファスITO膜の作製: 基板温度の影響

    村岡宗一郎, 山下大輔, 鎌滝普礼, 古閑一憲, 白谷正治, 板垣奈穂

    第36回プラズマ・核融合学会年会  2019.11 

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    Event date: 2019.11 - 2019.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:中部大学   Country:Japan  

  • Sputter deposition of wide-gap amorphous ZnAlON films with tunable bandgaps from 3.4 to 4.2 eV

    S. Urakawa, K. Kaneshima, D. Yamashita, K. Kamataki, D. Nakamura, K. Koga, M. Shiratani, N. Itagaki

    第36回プラズマ・核融合学会年会  2019.11 

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    Event date: 2019.11 - 2019.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:中部大学   Country:Japan  

  • 気相中のクラスター生成制御による低温低水素SiN膜の作製

    永石翔大, 佐々木勇輔, 鎌滝晋礼, 山下大輔, 板垣奈穂, 古閑一憲, 白谷正治

    第36回プラズマ・核融合学会年会  2019.11 

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    Event date: 2019.11 - 2019.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:中部大学   Country:Japan  

  • スパッタエピタキシーによるサファイア基板上への単結晶ZnO膜の成長

    中村優太, 村岡宗一郎, 鎌滝晋礼, 古閑一憲, 白谷正治, 板垣奈穂

    第36回プラズマ・核融合学会年会  2019.11 

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    Event date: 2019.11 - 2019.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:中部大学   Country:Japan  

  • (ZnO)x(InN)1-x膜のスパッタエピタキシーにおける基板温度の影響

    金島健太郎, 宮原奈乃華, 山下大輔, 鎌滝晋礼, 古閑一憲, 白谷正治, 板垣奈穂

    第36回プラズマ・核融合学会年会  2019.11 

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    Event date: 2019.11 - 2019.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:中部大学   Country:Japan  

  • マルチホロー放電プラズマCVD法を用いて高ガス流速で製膜することによるa-Si:H膜の面内に局所的に存在する高密度Si-H2結合の抑制

    原尚志, HAO Yuan, 阿部滉平, 山下大輔, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    第36回プラズマ・核融合学会年会  2019.11 

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    Event date: 2019.11 - 2019.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:中部大学   Country:Japan  

  • 反応性プラズマにおけるナノ粒子生成制御(招待講演) Invited

    鎌滝晋礼, 永石翔大, 佐々木勇輔, 原尚志, 岩本亮介, 山下大輔, 板垣奈穂, 古閑一憲, 白谷正治

    第36回プラズマ・核融合学会年会  2019.11 

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    Event date: 2019.11 - 2019.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:中部大学   Country:Japan  

  • ベイズ的最適化による高移動度アモルファスITO/In2O3成膜条件の探索

    岩本亮介, 鎌滝晋礼, 村岡宗一郎, 山下大輔, 板垣奈穂, 古閑一憲, 白谷正治

    第36回プラズマ・核融合学会年会  2019.12 

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    Event date: 2019.11 - 2019.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:中部大学   Country:Japan  

  • Fabrication of dye sensitized solar cells with up and down conversion nano-particles International conference

    F. L. Chawarambwa, K. Kamataki, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    29th Annual Meeting of MRS-J  2019.11 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Health Effects of Rice Harvested from Plasma-Irradiated Rice Seeds Administered Orally in Mice International conference

    A. Tanaka, K. Koga, M. Shiratani

    29th Annual Meeting of MRS-J  2019.11 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Influence of co-solvents on protein folding during plasma treatment (Invited) Invited International conference

    P. Attri, A. Bogaerts, K. Koga, M. Shiratani

    29th Annual Meeting of MRS-J  2019.11 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Effect of Plasma Irradiation to Seeds of Lactuca Sativa on Histogram of Fresh Weight of Their Seedling International conference

    R. Sato, M. Hiromatsu, K. Matsuo, T. Yoshida, R. Arita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    29th Annual Meeting of MRS-J  2019.11 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Substrate position dependence of characteristics of a-C:H films fabricated by Ar+CH4 plasma International conference

    S. H. Hwang, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    The 4th Asian Applied Physics Conference  2019.11 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kumamoto University   Country:Japan  

  • Development of Carbon Based Counter Electrodes for Dye Sensitized Solar Cells International conference

    F. L. Chawarambwa, K. Kamataki, K. Koga, M. Shiratani

    The 4th Asian Applied Physics Conference  2019.11 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kumamoto University   Country:Japan  

  • Machine Learning Analysis for Prediction of Key Plasma Process Parameters International conference

    R. Iwamoto, S. Okunaga, K. Kamataki, H. Hara, K. Koga, M. Shiratani

    The 4th Asian Applied Physics Conference  2019.11 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kumamoto University   Country:Japan  

  • Sputter deposition of amorphous ZnAlON films with tunable bandgap International conference

    S. Urakawa, N. Miyahara, D. Yamashita, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    The 4th Asian Applied Physics Conference  2019.11 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kumamoto University   Country:Japan  

  • Surface morphology of single-crystal ZnO films on sapphire substrates fabricated by sputter epitaxy *Yuta Nakamura, Soichiro Muraoka, Kunihiro K International conference

    Y. Nakamura, S. Muraoka, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    The 4th Asian Applied Physics Conference  2019.11 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kumamoto University   Country:Japan  

  • Effects of Substrate temperature on Crystal Quality of (ZnO)x(InN)1-x Films Fabricated by Sputter Epitaxy International conference

    K. Kaneshima, N. Miyahara, D. Yamashita, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    The 4th Asian Applied Physics Conference  2019.11 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kumamoto University   Country:Japan  

  • Sputter Epitaxy of (ZnO)x(InN)1-x films for Excitonic Transistors International conference

    R. Narishige, N. Miyahara, K. Kaneshima, D. Yamashita, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    The 4th Asian Applied Physics Conference  2019.11 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kumamoto University   Country:Japan  

  • Effects of DC Pulse Bias on Deposition Characteristics of a-C:H Films Deposited by High Pressure Ar+CH4 Plasma CVD International conference

    S. H. Hwang, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    41st International Symposium on Dry Process (DPS2019)  2019.11 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:JMS Aster Plaza, Hioshima   Country:Japan  

  • Low Temperature Fabrication of High Nitriding Degree of SiN films by Multi-Hollow Discharge SiH4+N2 Plasma CVD International conference

    K. Kamataki, S. Nagaishi, Y. Sasaki, H. Hara, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    41st International Symposium on Dry Process (DPS2019)  2019.11 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:JMS Aster Plaza, Hioshima   Country:Japan  

  • Fabrication of low resistive amorphous In2O3:Sn films using impurity mediate amorphization method: Effects of substrate temperature International conference

    S. Muraoka, D. Yamashita, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    41st International Symposium on Dry Process (DPS2019)  2019.11 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:JMS Aster Plaza, Hioshima   Country:Japan  

  • Fluctuation of Position and Energy of a Fine Particle in Plasma Nanofabrication

    M. Shiratani, M. Soejima, H. Seo, N. Itagaki, K. Koga

    第35回九州・山口プラズマ研究会  2019.11 

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    Event date: 2019.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:対馬市交流センター, 長崎   Country:Japan  

  • Precision control of nanoparticle property in reactive plasma ~ Low Temperature Fabrication of Low Hydrogen Content SiN films in a Multi-Hollow Discharge Plasma CVD ~

    K. Kamataki, S. Nagaishi, Y. Sasaki, H. Hara, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    第35回九州・山口プラズマ研究会  2019.11 

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    Event date: 2019.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:対馬市交流センター, 長崎   Country:Japan  

  • Effects of Pressure on Characteristics of a-Si:H Films Desosited using Multi-Hollow Discharge Plasma CVD International conference

    Y. Hao, H. Hara, K. Abe, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    3rd Asia-Pacific Conference on Plasma Physics (AAPPS-DPP2019)  2019.11 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Crowne Plaza Hefei, Hefei   Country:China  

  • Spatial inhomogeneous distribution of high Si-H2 bond density in a-Si:H films deposited by MHPCVD International conference

    H. Hara, Y. Hao, K. Abe, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    72nd Gaseous Electronics Conference  2019.10 

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    Event date: 2019.10 - 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Texas A&M Hotel and Conference Center, Texas   Country:Other  

  • Optical emission spectroscopy of plasma-catalytic CO2 methanation International conference

    A. Yamamoto, M. Ideguchi, S. Toko, K. Koga, M. Shiratani

    72nd Gaseous Electronics Conference  2019.10 

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    Event date: 2019.10 - 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Texas A&M Hotel and Conference Center, Texas   Country:Other  

  • Effects of Discharge Power on Deposition Cutoff of Carbon Nanoparticles Synthesized by High Pressure Ar+CH4 Multi-hollow Discharge Plasma CVD International conference

    S. H. Hwang, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    72nd Gaseous Electronics Conference  2019.10 

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    Event date: 2019.10 - 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Texas A&M Hotel and Conference Center, Texas   Country:Other  

  • Development of a Sensitive Electric Field Probe in Ar plasmas using Optically Trapped Fine Particles International conference

    K. Tomita, S. Okunaga, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    72nd Gaseous Electronics Conference  2019.10 

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    Event date: 2019.10 - 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Texas A&M Hotel and Conference Center, Texas   Country:Other  

  • Challenges and Opportunities in Dye Sensitized Solar Cells Using DBD Plasma Treated Upconversion Nanoparticles (Invited) Invited International conference

    K. Kamataki, F. L. Chawarambwa, K. Koga, M. Shiratani

    236th ECS Meeting  2019.10 

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    Event date: 2019.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Atlanta, GA   Country:Other  

  • 吸水したカイワレダイコン種子内ラジカル計測

    吉田 知晃, 佐藤 僚哉, 山下 大輔, 鎌瀧 晋礼, 板垣 奈穂, 古閑 一憲, 白谷 正治

    2019年第80回応用物理学会秋季学術講演会  2019.9 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  • AM変調反応性プラズマにおけるナノ粒子成長揺動に関する時空間情報解析

    鎌滝 晋礼, 田中 颯, 山下 大輔, 板垣 奈穂, 古閑 一憲, 白谷 正治

    2019年第80回応用物理学会秋季学術講演会  2019.9 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  • プラズマ誘起有機酸の前駆体が拓く超バイオ機能

    石川 健治, 橋爪 博司, 田中 宏昌, 吉武 淳, 柴田 貴広, 小鹿 一, 伊藤 昌文, 古閑 一憲, 白谷 正治, 豊國 伸哉, 吉川 史隆, 水野 正明, 堀 勝

    2019年第80回応用物理学会秋季学術講演会  2019.9 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  • プラズマ制御「前駆体」が拓く生命科学と材料科学(総合討論)

    金子 俊郎, 高島 圭介, 石川 健治, 朽津 和幸, 野崎 智洋, 澁田 靖, 古閑 一憲

    2019年第80回応用物理学会秋季学術講演会  2019.9 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  • (ZnO)x(InN)1-x膜スパッタエピタキシー:表面モルフォロジーの時間発展の観察

    金島 健太郎, 宮原 奈乃華, 浦川 聖一, 山下 大輔, 鎌滝 晋礼, 古閑 一憲, 白谷 正治

    2019年第80回応用物理学会秋季学術講演会  2019.9 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  • インジウムナノ粒子の気管内および皮下投与によるインジウムの生体影響の比較

    田中昭代, 平田美由紀, 松村渚, 古閑一憲, 白谷正治

    第60回大気環境学会年会  2019.9 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京農工大学府中キャンパス   Country:Japan  

  • Ultra-sensitive Plasma Potential Measurements by using an Optically Trapped Fine Particle International conference

    M. Shiratani, R. Iwamoto, K. Kamataki, N. Itagaki, K. Koga

    The 12th Asian-European International Conference on Plasma Surface Engineering (AEPSE2019)  2019.9 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Maison Glad Hotel, Jeju Island   Country:Korea, Republic of  

  • Synthesis of Si-nanoparticles using low temperature plasmas and its application to DSSCs International conference

    F. L. Chawarambwa, M. Shiratani, K. Koga, K. Kamataki, H. Seo

    The 12th Asian-European International Conference on Plasma Surface Engineering (AEPSE2019)  2019.9 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Maison Glad Hotel, Jeju Island   Country:Korea, Republic of  

  • Developing Prediction of Key Plasma Processing Parameter from Small Data of Experimental Results by Machine Learning Method International conference

    K. Kamataki, R. Iwamoto, S. Okunaga, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    The 12th Asian-European International Conference on Plasma Surface Engineering (AEPSE2019)  2019.9 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Maison Glad Hotel, Jeju Island   Country:Korea, Republic of  

  • Effects of cluster incorporation in SiN films International conference

    S. Nagaishi, Y. Sasaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    The 12th Asian-European International Conference on Plasma Surface Engineering (AEPSE2019)  2019.9 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Maison Glad Hotel, Jeju Island   Country:Korea, Republic of  

  • High Rate Deposition of Carbon Films Using High Pressure CH4 Plasma CVD International conference

    S. H. Hwang, R. Iwamoto, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    The 12th Asian-European International Conference on Plasma Surface Engineering (AEPSE2019)  2019.9 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Maison Glad Hotel, Jeju Island   Country:Korea, Republic of  

  • Investigation of Spatiotemporal Structure of Fluctuation Related with Nanoparticle Growth in Amplitude-Modulated VHF Discharge Reactive Plasma International conference

    K. Kamataki, R. Iwamoto, H. Tanaka, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    The 12th Asian-European International Conference on Plasma Surface Engineering (AEPSE2019)  2019.9 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Maison Glad Hotel, Jeju Island   Country:Korea, Republic of  

  • Low Temperature Fabrication of Low Hydrogen Content SiN films by Multi Hollow Discharge SiH4+N2 Plasma CVD International conference

    Y. Sasaki, S. Nagaishi, H. Hara, S. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    The Korea-Japan Workshop on Dust Particles in Plasmas  2019.8 

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    Event date: 2019.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:NFRI, Daejeon   Country:Korea, Republic of  

  • Advanced Methods of Thin Film Fabrication using Plasmas (Invited) Invited International conference

    M. Shiratani, K. Kamataki, K. Koga, N. Itagaki

    28th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS28)  2019.8 

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    Event date: 2019.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ecole Polytechnique, Palaiseau   Country:France  

  • Position fluctuation of a fine particle trapped optically in Ar plasma International conference

    M. Shiratani, K. Tomita, H. Ohtomo, R. Iwamoto, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga

    XXXIV International Conference on Phenomena in Ionized Gases (XXXIV ICPIG) & 10th International Conference on Reactive Plasmas (ICRP-10)  2019.7 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sapporo Education and Culture Hall   Country:Japan  

  • Effects of surrounding gas on plasma-induced liquid flow International conference

    T. Kawasaki, K. Nishida, M. Kawaguchi, Y. Hazama, G. Uchida, F. Mitsugi, N. Takeuchi, K. Takenaka, K. Koga, Y. Setsuhara, M. Shiratani

    XXXIV International Conference on Phenomena in Ionized Gases (XXXIV ICPIG) & 10th International Conference on Reactive Plasmas (ICRP-10)  2019.7 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sapporo Education and Culture Hall   Country:Japan  

  • Cold plasma treatment stimulates seed germination by inducing dormancy loss due to changes in phytohormone balance International conference

    V. Mildaziene, L. Degutyte˙-Fomin, G. Pauzaite, A. Ivankov, R. Zukiene, Z. Nauciene, I. Filatova, V. Lyushkevich, K. Koga, M. Shiratani

    XXXIV International Conference on Phenomena in Ionized Gases (XXXIV ICPIG) & 10th International Conference on Reactive Plasmas (ICRP-10)  2019.7 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sapporo Education and Culture Hall   Country:Japan  

  • Effects of liquid properties on plasma-induced liquid flow International conference

    K. Nishida, M. Kawaguchi, Y. Hazama, G. Uchida, F. Mitsugi, N. Takeuchi, K. Takenaka, K. Koga, Y. Setsuhara, M. Shiratani, T. Kawasaki

    XXXIV International Conference on Phenomena in Ionized Gases (XXXIV ICPIG) & 10th International Conference on Reactive Plasmas (ICRP-10)  2019.7 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sapporo Education and Culture Hall   Country:Japan  

  • Atmospheric plasma-assisted modification of nanosized TiO2/Y2O3:Er3+/Yb3+ double composite film and its application to dye-sensitized solar cells International conference

    F. L. Chawarambwa, H. Chou, M. Shiratani, K. Koga

    XXXIV International Conference on Phenomena in Ionized Gases (XXXIV ICPIG) & 10th International Conference on Reactive Plasmas (ICRP-10)  2019.7 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sapporo Education and Culture Hall   Country:Japan  

  • Study on Relationship between Growth of Nanoparticles and Plasma Fluctuation due to Amplitude Modulated Discharge Voltage in Capacitively Coupled Reactive Plasma International conference

    K. Kamataki, R. Zhou, H. Ohtomo, R. Iwamoto, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    XXXIV International Conference on Phenomena in Ionized Gases (XXXIV ICPIG) & 10th International Conference on Reactive Plasmas (ICRP-10)  2019.7 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sapporo Education and Culture Hall   Country:Japan  

  • Influence of DC Substrate Bias Voltage on Deposition of Carbon Nanoparticles Produced by Ar+CH4 Multi-Hollow Discharge Plasma CVD method International conference

    S. H. Hwang, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, J. S. Oh, T. Nakatani

    XXXIV International Conference on Phenomena in Ionized Gases (XXXIV ICPIG) & 10th International Conference on Reactive Plasmas (ICRP-10)  2019.7 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sapporo Education and Culture Hall   Country:Japan  

  • SiH4 gas velocity dependence of deposition rate and Si-H2 bond density of a-Si:H films deposited by multi-hollow discharge plasma CVD method International conference

    H. Hara, S. Nagaishi, R. Iwamoto, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    XXXIV International Conference on Phenomena in Ionized Gases (XXXIV ICPIG) & 10th International Conference on Reactive Plasmas (ICRP-10)  2019.7 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sapporo Education and Culture Hall   Country:Japan  

  • Low Temperature Fabrication of Low Hydrogen Content SiN films in a Multi-Hollow Discharge Plasma CVD International conference

    K. Kamataki, S. Nagaishi, Y. Sasaki, H. Hara, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    XXXIV International Conference on Phenomena in Ionized Gases (XXXIV ICPIG) & 10th International Conference on Reactive Plasmas (ICRP-10)  2019.7 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sapporo Education and Culture Hall   Country:Japan  

  • Sputter Epitaxy of (ZnO)x(InN)1-x Films on Sapphire Substrates International conference

    N. Miyahara, S. Urakawa, D. Yamashita, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    XXXIV International Conference on Phenomena in Ionized Gases (XXXIV ICPIG) & 10th International Conference on Reactive Plasmas (ICRP-10)  2019.7 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sapporo Education and Culture Hall   Country:Japan  

  • Prediction of Sputtering Conditions for Amorphous and Low Resistive ITO/In2O3 Films via Machine Learning International conference

    R. Iwamoto, K. Kamataki, S. Muraoka, N. Miyahara, D. Yamashita, D. Ikeda, K. Koga, N. Itagaki, M. Shiratani

    XXXIV International Conference on Phenomena in Ionized Gases (XXXIV ICPIG) & 10th International Conference on Reactive Plasmas (ICRP-10)  2019.7 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sapporo Education and Culture Hall   Country:Japan  

  • Influence of Seed Coat Color on Reactive Species in Plasma Irradiated Seeds of Radish Sprouts International conference

    K. Koga, K. Kamataki, N. Itagaki, M. Shiratani, V. Mildaziene

    XXXIV International Conference on Phenomena in Ionized Gases (XXXIV ICPIG) & 10th International Conference on Reactive Plasmas (ICRP-10)  2019.7 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sapporo Education and Culture Hall   Country:Japan  

  • RFマグネトロンスパッタリングによる可変バンドギャップ半導体(ZnO)x(AlN)1-xの創成

    浦川聖市, 宮原奈乃華, 山下大輔, 鎌滝晋礼, 古閑一憲, 白谷正治, 板垣奈穂

    令和元年度日本表面真空学会 九州支部学術講演会(九州表面・真空研究会2019)  2019.6 

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    Event date: 2019.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡大学   Country:Japan  

  • プラズマ中の光捕捉微粒子に働く力の揺らぎ検出

    白谷正治, 大友洋, 鎌滝晋礼, 板垣奈穂, 古閑一憲

    日本物理学会第74回年次大会(2019年)  2019.3 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • 反応性プラズマにおけるナノ粒子成長における変調レベル依存性

    鎌滝晋礼, 周靭, 大友洋, 岩本亮介, 山下大輔, 板垣奈穂, 古閑一憲, 白谷正治

    日本物理学会第74回年次大会(2019年)  2019.3 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • スパッタエピタキシーによるサファイア基板上(ZnO)x(InN)1-x薄膜の2段階成長 Invited

    宮原奈乃華, 浦川聖市, 山下大輔, 鎌滝晋礼, 古閑一憲, 白谷正治, 板垣奈穂

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  • Arプラズマ中の光捕捉微粒子を用いたシース近傍電界計測法の開発

    富田健太郎, 大友洋, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  • 反応性プラズマにおける相互作用揺らぎの時空間構造の周波数依存性

    鎌滝晋礼, 周靭, 大友洋, 山下大輔, 板垣奈穂, 古閑一憲, 白谷正治

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  • ダウン/アップコンバージョンナノ粒子を用いた色素増感太陽電池の特性改善

    Chawarambwa Fadzai, 張博辰, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治, 徐鉉雄

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  • Deposition Control of Carbon Nanoparticles Synthesized by Using Ar + CH4 Multi-Hollow Discharge Plasma CVD Method

    S. H. Hwang, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date: 2019.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  • プラズマに関する学生実験が受講者の動機付けに与える影響

    鎌滝晋礼, 大友洋, 山下大輔, 板垣奈穂, 古閑一憲, 白谷正治

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  • 高ガス流速下におけるシランプラズマ中で発生した粒子の堆積とその膜質への影響

    田中和真, 石榴, 原尚志, 永石翔大, 山下大輔, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  • Cluster Incorporation Amount and Film Composition of SiN Films Fabricated by Multi-Hollow Discharge Plasma CVD Method International conference

    S. Nagaishi, Y. Sasaki, K. Tanaka, H. Hara, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    6th Korea-Japan Joint Symposium on Advanced Solar Cells 2019  2019.2 

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    Event date: 2019.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kinugawa Hotel Mikazuki, Tochigi   Country:Japan  

  • High transparency polymer counter electrode for bifacial dye sensitized solar cells International conference

    B. Zhang, F. L. chawarambwa, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    6th Korea-Japan Joint Symposium on Advanced Solar Cells 2019  2019.2 

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    Event date: 2019.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kinugawa Hotel Mikazuki, Tochigi   Country:Japan  

  • Effects of film deposition precursor on FWHM into a-Si:H thin films deposited by plasma CVD International conference

    K. Tanaka, H. Hara, L. Shi, S. Nagaishi, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    6th Korea-Japan Joint Symposium on Advanced Solar Cells 2019  2019.2 

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    Event date: 2019.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kinugawa Hotel Mikazuki, Tochigi   Country:Japan  

  • Effects of clusters and higher-order silanes (HOSs) on surface roughness and Si-H2 bond density in a-Si:H films deposited by SiH4 plasma CVD International conference

    H. Hara, K. Tanaka, L. Shi, S. Nagaishi, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    6th Korea-Japan Joint Symposium on Advanced Solar Cells 2019  2019.2 

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    Event date: 2019.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kinugawa Hotel Mikazuki, Tochigi   Country:Japan  

  • Ambipolar charging due to plasma irradiation: from nanoparticles to proteins (Invited) Invited International conference

    M. Shiratani, K. Kamataki, N. Itagaki, K. Koga

    19th Workshop on Fine Particle Plasmas  2018.12 

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    Event date: 2018.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:National Institute of Fusion Science, Gifu   Country:Japan  

  • Growth of Nano-Particles in Reactive Plasma using Amplitude Modulated rf Discharge Voltage International conference

    K. Kamataki, R. Zhou, H. Ohtomo, R. Iwamoto, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    19th Workshop on Fine Particle Plasmas  2018.12 

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    Event date: 2018.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:National Institute of Fusion Science, Gifu   Country:Japan  

  • Study on Spatial Distribution of Plasma Fluctuation Using Optically Trapped Fine Particle in Ar Plasma International conference

    H. Ohtomo, T. Chimura, R. Zhou, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    19th Workshop on Fine Particle Plasmas  2018.12 

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    Event date: 2018.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:National Institute of Fusion Science, Gifu   Country:Japan  

  • Sputter Epitaxy of ZnO Based Compounds for Excitonic Devices Invited International conference

    N. Itagaki, K. Imoto, N. Miyahara, D. Yamashita, K. Kamataki, K. Koga, M. Shiratani

    28th Annual Meeting of MRS-Japan 2018  2018.12 

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    Event date: 2018.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kitakyushu International Conference Center   Country:Japan  

  • Approaches to increase throuput of Plasma- Catalytic CO2 methanation International conference

    S. Tanida, A. Yamamoto, K. Koga, M. Shiratani

    28th Annual Meeting of MRS-Japan 2018  2018.12 

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    Event date: 2018.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kitakyushu International Conference Center   Country:Japan  

  • CO2 hydrogenation by plasma catalytic method: pressure dependence International conference

    A. Yamamoto, S. Tanida, K. Koga, M. Shiratani

    28th Annual Meeting of MRS-J  2018.12 

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    Event date: 2018.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kitakyushu International Conference Center   Country:Japan  

  • Effects of N2, O2 gas composition ratio and humidity in plasma on plasma induced plant growth enhancement International conference

    Y. Wada, R. Sato, R. Shimada, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    28th Annual Meeting of MRS-Japan 2018  2018.12 

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    Event date: 2018.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kitakyushu International Conference Center   Country:Japan  

  • Effects of film deposition precursors on Raman intensity ITA/ITO of a-Si:H thin films fabricated by plasma CVD method International conference

    K. Tanaka, H. Hara, S. Nagaishi, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    28th Annual Meeting of MRS-Japan 2018  2018.12 

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    Event date: 2018.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kitakyushu International Conference Center   Country:Japan  

  • Effects of cluster-eliminating filter and gas velocity on SiH2 bond formation in a-Si:H films deposited by MHDPCVD method International conference

    H. Hara, K. Tanaka, S. Nagaishi, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    28th Annual Meeting of MRS-Japan 2018  2018.12 

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    Event date: 2018.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kitakyushu International Conference Center   Country:Japan  

  • Size and Structure Control of Carbon Nano-particles Synthesized by Multi-hollow Discharge Plasma CVD Method International conference

    S. H. Hwang, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    28th Annual Meeting of MRS-Japan 2018  2018.12 

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    Event date: 2018.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kitakyushu International Conference Center   Country:Japan  

  • Fabrication of high-mobility amorphous In2O3:Sn films via nitrogen-mediated amorphization: effects of target-substrate distance International conference

    K. Imoto, D.Yamashita, K.Kamataki, K.Koga, M.Shiratani, N.Itagaki

    28th Annual Meeting of MRS-Japan 2018  2018.12 

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    Event date: 2018.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kitakyushu International Conference Center   Country:Japan  

  • Deposition Rate and Cluster Incorporation Amount of SiN Films Fabricated by a Multi-Hollow Discharge Plasma CVD Method International conference

    S. Nagaishi, Y. Sasaki, K. Tanaka, H. Hara, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    28th Annual Meeting of MRS-Japan 2018  2018.12 

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    Event date: 2018.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kitakyushu International Conference Center   Country:Japan  

  • Sputter Epitaxy of compound semiconductors via inverse Stranski-Krastanov mode: A method of single crystalline film growth beyond lattice matchins condition Invited International conference

    N. Itagaki, K. Imoto, N. Miyahara, D. Yamashita, K. Kamataki, K. Koga, M. Shiratani

    28th Annual Meeting of MRS-Japan 2018  2018.12 

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    Event date: 2018.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kitakyushu International Conference Center   Country:Japan  

  • マグネトロンスパッタによる擬2元系混晶(ZnO)x(InN,AlN)1-xのヘテロエピタキシー

    浦川聖市, 宮原奈乃華, 山下大輔, 鎌滝晋礼, 古閑一憲, 白谷正治, 板垣奈穂

    プラズマ・核融合学会九州・沖縄・山口支部 第22回支部大会  2018.12 

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    Event date: 2018.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • 種子への大気圧誘電体バリア放電プラズマ照射: 種子内色素の影響

    嶋田凌太郎, 和田陽介, 佐藤僚哉, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第22回支部大会  2018.12 

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    Event date: 2018.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • SiH4+N2 マルチホロー放電プラズマ CVD を用い製膜した SiNx 薄膜のクラスター混入と膜質 の関係

    佐々木勇輔, 永石翔大, 田中和真, 原尚志, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第22回支部大会  2018.12 

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    Event date: 2018.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • プラズマ中光捕捉微粒子の位置揺らぎに関する研究

    千村智, 大友洋, 周靭, 山下大輔, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第22回支部大会  2018.12 

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    Event date: 2018.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • Si 薄膜プラズマ CVD における成膜条件と膜質の相関の機械学習解析

    岩本亮介, 鎌滝晋礼, 田中和真, 原尚志, 山下大輔, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第22回支部大会  2018.12 

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    Event date: 2018.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • 容量結合放電プラズマを用いた炭酸ガスのメタンへの改質

    山本瑛久, 谷田知史, 山下大輔, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第22回支部大会  2018.12 

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    Event date: 2018.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • Effects of DC Bias Voltage on Deposition of Carbon Nano Particles Synthesized by Ar + CH4 Multi-Hollow Discharge Plasma International conference

    S. H. Hwang, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    The 3rd Asian Applied Physics Conference  2018.12 

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    Event date: 2018.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka University   Country:Japan  

  • Synthesis of Er3+/Eu3+ co-doped Y2O3 nanoparticles and its application to dye sensitized solar cells International conference

    F.L. Chawarambwa, B. Zhang, M. Shiratani, K. Koga

    The 3rd Asian Applied Physics Conference  2018.12 

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    Event date: 2018.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka University   Country:Japan  

  • Catalytic activity enhanced polymer counter electrode for bificial dye-sensitized solar cells International conference

    B. Zhang, F. L. Chawarambwa, H. Seo, K. Koga, M. Shiratani

    The 3rd Asian Applied Physics Conference  2018.12 

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    Event date: 2018.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka University   Country:Japan  

  • Applying Multivariate Analysis to a-Si:H Deposition Plasma Process Data International conference

    R. Iwamoto, K. Kamataki, K. Tanaka, H. Hara, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    The 3rd Asian Applied Physics Conference  2018.12 

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    Event date: 2018.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka University   Country:Japan  

  • Effect of Plasma Fluctuation Frequency on Growth of Nanopariticles in Reactive Plasmas International conference

    K. Kamataki, R. Zhou, H. Ohtomo, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    The 3rd Asian Applied Physics Conference  2018.12 

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    Event date: 2018.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka University   Country:Japan  

  • Time evolution of amount of cluster incorporation into SiNx films and electron temperature of CVD Plasma International conference

    S. Nagaishi, Y. Sasaki, K. Tanaka, H. Hara, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M, Shiratani

    The 3rd Asian Applied Physics Conference  2018.12 

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    Event date: 2018.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka University   Country:Japan  

  • Gas velocity dependence of Si-H2 bond density and surface roughness of a-Si:H films deposited by multi-hollow plasma CVD International conference

    H. Hara, K. Tanaka, S. Nagaishi, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    The 3rd Asian Applied Physics Conference  2018.12 

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    Event date: 2018.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka University   Country:Japan  

  • リンゴの味と色に対する低温プラズマ照射の影響

    白谷正治, 大井手芳徳, 古閑一憲, 田原祐助, 都甲潔

    第35回プラズマ・核融合学会年会  2018.12 

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    Event date: 2018.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪大学   Country:Japan  

  • 圧力勾配式スパッタリングによる透明CNx膜のガス分圧依存性

    太田裕己, 高橋希世美, 米澤健, 中谷達行, 呉準席, 古閑一憲, 白谷正治, 伊藤昌文

    第35回プラズマ・核融合学会年会  2018.12 

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    Event date: 2018.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪大学   Country:Japan  

  • 種子へのプラズマ照射における活性種の吸収特性の検討-種子数密度の効果

    和田陽介, 佐藤僚哉, 嶋田凌太郎, 山下大輔, 板垣奈穂, 古閑一憲, 白谷正治

    第35回プラズマ・核融合学会年会  2018.12 

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    Event date: 2018.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪大学   Country:Japan  

  • CO2のCH4化のための低圧高周波プラズマの分光計測

    谷田知史, 山本瑛久, 古閑⼀憲, 白谷正治

    第35回プラズマ・核融合学会年会  2018.12 

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    Event date: 2018.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪大学   Country:Japan  

  • 大気圧プラズマ照射したイネの成長に対する浸水処理日数依存性

    佐藤僚哉, 和田陽介, 嶋田凌太郎, 山下大輔, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    第35回プラズマ・核融合学会年会  2018.12 

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    Event date: 2018.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪大学   Country:Japan  

  • 顕微FTIRを用いたプラズマCVD Si薄膜の結合状態の二次元分布評価

    石榴, 田中和真, 原尚志, 鎌滝晋礼, 山下大輔, 板垣奈穂, 古閑一憲, 白谷正治

    第35回プラズマ・核融合学会年会  2018.12 

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    Event date: 2018.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪大学   Country:Japan  

  • 反応性プラズマ中のナノ粒子量揺らぎの構造解析

    周靭, 鎌滝晋礼, 大友洋, 山下大輔, 板垣奈穂, 古閑一憲, 白谷正治

    第35回プラズマ・核融合学会年会  2018.12 

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    Event date: 2018.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪大学   Country:Japan  

  • 反応性プラズマにおけるプラズマ揺らぎとラジカルとナノ粒子成長の関係

    鎌滝晋礼, 周靭, 大友洋, 山下大輔, 板垣奈穂, 古閑一憲, 白谷正治

    第35回プラズマ・核融合学会年会  2018.12 

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    Event date: 2018.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪大学   Country:Japan  

  • 高速ガス流マルチホロー放電プラズマの発光分光計測

    原尚志, 田中和真, 石榴, 中野慎也, 山下大輔, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    第35回プラズマ・核融合学会年会  2018.12 

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    Event date: 2018.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪大学   Country:Japan  

  • フラックス制御スパッタによるIn-rich (ZnO)x(InN)1-x膜のヘテロエピタキシー

    宮原奈乃華, 山下大輔, 鎌滝晋礼, 中村大輔, 古閑一憲, 白谷正治, 板垣奈穂

    第35回プラズマ・核融合学会年会  2018.12 

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    Event date: 2018.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪大学   Country:Japan  

  • プラズマCVD法で作製したa-Si:H薄膜のSiネットワーク秩序性評価

    田中和真, 原尚志, 石榴, 中野慎也, 山下大輔, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    第35回プラズマ・核融合学会年会  2018.12 

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    Event date: 2018.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪大学   Country:Japan  

  • プラズマCVDによるSiN製膜時のクラスターの混入が膜物性へ与える影響

    永石翔大, 佐々木勇輔, 田中和真, 原尚志, 山下大輔, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    第35回プラズマ・核融合学会年会  2018.12 

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    Event date: 2018.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪大学   Country:Japan  

  • 窒素添加結晶化法による格子不整合基板上へZnOエピタキシャル成長—窒素酸素共添加多段バッファー層の効果—

    呂佳豪, 山下大輔, 古閑一憲, 白谷正治, 板垣奈穂

    第35回プラズマ・核融合学会年会  2018.12 

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    Event date: 2018.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪大学   Country:Japan  

  • RFマグネトロンスパッタ法を用いたSi(111)基板上でのZnO結晶成長における窒素不純物の効果

    村岡宗一郎, 呂佳豪, 山下大輔, 鎌滝晋礼, 古閑一憲, 白谷正治, 板垣奈穂

    第35回プラズマ・核融合学会年会  2018.12 

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    Event date: 2018.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪大学   Country:Japan  

  • Growth Kinetics of Carbon Nano Particles Generated in an Ar/CH4 Multi-Hollow Discharge Plasmas

    S. H. Hwang, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    第35回プラズマ・核融合学会年会  2018.12 

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    Event date: 2018.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:大阪大学   Country:Japan  

  • Arプラズマ中微粒子の相互作用の評価

    大友洋, 周靭, 山下大輔, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    第35回プラズマ・核融合学会年会  2018.12 

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    Event date: 2018.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪大学   Country:Japan  

  • Ar/N2スパッタリングによる低抵抗アモルファスITO膜の作製:ターゲット-基板間距離の影響

    井本幸希, 山下大輔, 鎌滝晋礼, 古閑一憲, 白谷正治, 板垣奈穂

    第35回プラズマ・核融合学会年会  2018.12 

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    Event date: 2018.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪大学   Country:Japan  

  • Sputter Epitaxy via Inverse Stranski-Krastanov Growth Mode: A Method of Single Crystal Growth beyond Lattice Matching Condition International conference

    N. Itagki, D. Yamashita, K. Kamataki, K. Koga, M. Shiratani

    AVS Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2018)  2018.12 

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    Event date: 2018.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Waikoloa Beach Marriott Resort & Spa, Waikoloa Beach, Hawaii, USA   Country:Other  

  • Catalyst-free growth of c-axis aligned (ZnO)0.79(InN)0.21 nanorods by RF magnetron sputtering International conference

    N. Miyahara, D. Yamashita, D. Nakamura, K. Koga, M. Shiratani, N. Itagaki

    2018 MRS Fall Meeting & Exhibit  2018.11 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston, Massachusetts   Country:Other  

  • Effects of nitrogen impurity on sputtering growth of ZnO films on Si(111) substrates International conference

    S. Muraoka, J. Lyu, D. Yamashita, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    2018 MRS Fall Meeting & Exhibit  2018.11 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston, Massachusetts   Country:Other  

  • 反応性プラズマにおけるプラズマ揺らぎの時空間構造

    鎌滝晋礼, 周靭, 大友洋, 岩本亮介, 山下大輔, 板垣奈穂, 古閑一憲, 白谷正治

    第34回九州・山口プラズマ研究会  2018.11 

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    Event date: 2018.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:シーサイドホテル屋久島, 鹿児島   Country:Japan  

  • Motion analysis of inter-particle interactions of three fine particles in Ar plasma International conference

    H. Ohtomo, R. Zhou, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    40th International Symposium on Dry Process (DPS2018)  2018.11 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya University   Country:Japan  

  • Sputter deposition of low resistive amorphous In2O3:Sn films using nitrogen-mediated amorphization method: Effects of target-substrate distance International conference

    K. Imoto, N. Miyahara, D.Yamashita, K.Kamataki, K.Koga, M.Shiratani, N.Itagaki

    40th International Symposium on Dry Process (DPS2018)  2018.11 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya University   Country:Japan  

  • ESR study of plasma irradiated seeds International conference

    M. Shiratani, Y. Wada, R. Sato, D. Yamashita, K. Koga

    2nd Asia-Pacific Conference on Plasma Physics (AAPPS-DPP2018)  2018.11 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:The Kanazawa Chamber of Commerce and Industry & Ishikawa Prefectural Bunkyo Hall   Country:Japan  

  • Spatial-Structure of Density Fluctuation of Nanoparticles in Amplitude Modulated Capactively Coupled Plasma International conference

    R. Zhou, K. Kamataki, H. Ohtomo, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    2nd Asia-Pacific Conference on Plasma Physics (AAPPS-DPP2018)  2018.11 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:The Kanazawa Chamber of Commerce and Industry & Ishikawa Prefectural Bunkyo Hall   Country:Japan  

  • Spatial distribution of SiH2/SiH bond density ratio in a-Si:H solar cells fabricated by plasma CVD International conference

    L. Shi, K. Tanaka, H. Hara, S. Nakano, D. Yamashita, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    2nd Asia-Pacific Conference on Plasma Physics (AAPPS-DPP2018)  2018.11 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:The Kanazawa Chamber of Commerce and Industry & Ishikawa Prefectural Bunkyo Hall   Country:Japan  

  • Impact of Amplitude Modulation of RF Discharge Voltage on the Spatial Profile of Nanoparticle Characteristics in Reactive Plasma (Invited) Invited International conference

    K. Kamataki, R. Zhou, H. Ohtomo, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    2nd Asia-Pacific Conference on Plasma Physics (AAPPS-DPP2018)  2018.11 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:The Kanazawa Chamber of Commerce and Industry & Ishikawa Prefectural Bunkyo Hall   Country:Japan  

  • Suppression of HOS molecules incorporation in a-Si:H films fabricated by plasma CVD International conference

    K. Tanaka, H. Hara, L. Shi, S. Nagaishi, S. Nakano, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    2nd Asia-Pacific Conference on Plasma Physics (AAPPS-DPP2018)  2018.11 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:The Kanazawa Chamber of Commerce and Industry & Ishikawa Prefectural Bunkyo Hall   Country:Japan  

  • Sputter epitaxy of single crystalline ZnO on 18&#37;-lattice-mismatched sapphire using multi buffer layers fabricated via nitrogen mediated crystallization International conference

    J. Lyu, D. Yamashita, K. Koga, M. Shiratani, N. Itagaki

    2nd Asia-Pacific Conference on Plasma Physics (AAPPS-DPP2018)  2018.11 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:The Kanazawa Chamber of Commerce and Industry & Ishikawa Prefectural Bunkyo Hall   Country:Japan  

  • Spatial-Structure of Density Fluctuation of Nanoparticles in Amplitude Modulated Capactively Coupled Plasma International conference

    R. Zhou, K. Kamataki, H. Ohtomo, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    2nd Asia-Pacific Conference on Plasma Physics (AAPPS-DPP2018)  2018.11 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:The Kanazawa Chamber of Commerce and Industry & Ishikawa Prefectural Bunkyo Hall   Country:Japan  

  • Effects of Gas Pressure on Size of Carbon Nanoparticles Prepared by Methane Plasma Process International conference

    S. H. Hwang, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    2nd Asia-Pacific Conference on Plasma Physics (AAPPS-DPP2018)  2018.11 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:The Kanazawa Chamber of Commerce and Industry & Ishikawa Prefectural Bunkyo Hall   Country:Japan  

  • Sputter epitaxy of high quality (ZnO)x(InN)1-x: a new semiconducting material for excitonic devices (Invited) Invited International conference

    N. Itagki, N. Miyahara, D. Yamashita, K. Kamataki, K. Koga, M. Shiratani

    2nd Asia-Pacific Conference on Plasma Physics (AAPPS-DPP2018)  2018.11 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:The Kanazawa Chamber of Commerce and Industry & Ishikawa Prefectural Bunkyo Hall   Country:Japan  

  • Micron-scale plasma fluctuation detected using paired fine particles (Invited) Invited International conference

    M. Shiratani, H. Ohtomo, K. Koga

    2nd Asia-Pacific Conference on Plasma Physics (AAPPS-DPP2018)  2018.11 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:The Kanazawa Chamber of Commerce and Industry & Ishikawa Prefectural Bunkyo Hall   Country:Japan  

  • SiH4+N2マルチホロー放電プラズマCVDによる SiN製膜時の膜へのクラスターの取り込み

    永石翔大, 佐々木勇輔, 田中和真, 原尚志, 山下大輔, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    放電/プラズマ・パルスパワー合同研究会  2018.10 

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    Event date: 2018.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大分大学   Country:Japan  

  • 銅電極を用いた低圧放電によるCO2のメタン変換

    谷田知史, 山本瑛久, 古閑一憲, 白谷正治

    放電/プラズマ・パルスパワー合同研究会  2018.10 

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    Event date: 2018.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大分大学   Country:Japan  

  • スパッタエピタキシーによるサファイア基板直上へのIn-rich (ZnO)x(InN)1-x 膜の作製

    宮原奈乃華, 山下大輔, 鎌滝晋礼, 中村大輔, 古閑一憲, 白谷正治, 板垣奈穂

    2018年第79回応用物理学会秋季学術講演会  2018.9 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  • 大気圧誘電体バリア放電プラズマ照射に対する種皮の機能大気圧誘電体バリア放電プラズマ照射に対する種皮の機能

    鎌滝晋礼, 和田陽介, 嶋田凌太郎, 佐藤僚哉, 山下大輔, 板垣奈穂, 古閑一憲, 白谷正治, Vida Mildaziene

    2018年第79回応用物理学会秋季学術講演会  2018.9 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  • CH4+Arマルチホロー放電プラズマで生成したカーボンナノ粒子の基板堆積に対するガス流量の影響

    S. H. Hwang, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    2018年第79回応用物理学会秋季学術講演会  2018.9 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  • Effects of CH4 Concentration on Size of Carbon Nano-Particles Formed in Multi-hollow Discharge Plasma International conference

    S. H. Hwang, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    6th UK-Japan Engineering Education League Workshop 2018  2018.9 

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    Event date: 2018.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyushu University   Country:Japan  

  • Improvement of Si network order of a-Si:H thin films by suppressing incorporation of HOS molecules International conference

    S. Nakano, K. Tanaka, H. Hara, L. Shi, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    6th UK-Japan Engineering Education League Workshop 2018  2018.9 

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    Event date: 2018.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyushu University   Country:Japan  

  • Analysis of Inter-particle Interactions of Two Fine Particles in Ar Plasma International conference

    H. Ohtomo, R. Zhou, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    JP-KO dust workshop 2018  2018.7 

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    Event date: 2018.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:KKR Kamakura   Country:Japan  

  • Density modulation of nanoparticles in amplitude modulated discharge plasmas International conference

    M. Shiratani, R. Zhou, H. Ohtomo, N. Itagaki, K. Koga

    24th Europhysics Conference on Atomic and Molecular Physics of Ionized Gases (ESCAMPIG 2018)  2018.7 

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    Event date: 2018.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Glasgow   Country:Other  

  • Cross correlation analysis of fluctuation of interactions between nanoparticles and low pressure reactive plasmas (Invited) Invited International conference

    M. Shiratani, K. Koga

    10th International Conference on Processing & Manufacturing of Advanced Materials Processing, Fabrication, Properties, Applications (THERMEC 2018)  2018.7 

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    Event date: 2018.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Paris   Country:France  

  • Room Temperature Photoluminescence from (ZnO)0.79(InN)0.21 films fabricated by RF magnetron sputtering International conference

    N. Miyahara, L. Shi, K. Iwasaki, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    10th International Conference on Processing & Manufacturing of Advanced Materials Processing, Fabrication, Properties, Applications (THERMEC 2018)  2018.7 

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    Event date: 2018.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Paris   Country:France  

  • Effects of gas velocity dependence of Si-H2 bond density at P/I interface of a-Si:H layered films deposited by multi-hollow discharge plasma CVD. International conference

    H. Hara, K. Tanaka, S. Nagaishi, S. Toko, D. Yamashita, H. Seo, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani

    Workshop "Plasma surface interaction for technological applications"  2018.6 

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    Event date: 2018.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:University of Kiel   Country:Germany  

  • Methanation of CO2 using low temperature and catalyst International conference

    A. Yamamoto, S. Tanida, S. Toko, K. Koga, M. Shiratani

    Workshop "Plasma surface interaction for technological applications"  2018.6 

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    Event date: 2018.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:University of Kiel   Country:Germany  

  • SiH4 gas flow rate dependence of Si-H2 bond density at P/I interface in aSi:H solar cells fabricated by plasma CVD International conference

    H. Hara, K. Tanaka, S. Nagaishi, S. Toko, D. Yamashita, H. Seo, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani

    28th Symposium on Plasma Physics and Technology (SPPT)  2018.6 

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    Event date: 2018.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Czech Technical University in Prague   Country:Other  

  • Effect of gas flow rate on plasma-catalytic methanation reaction International conference

    A. Yamamoto, S. Tanida, S. Toko, K. Koga, M. Shiratani

    28th Symposium on Plasma Physics and Technology (SPPT)  2018.6 

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    Event date: 2018.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Czech Technical University in Prague   Country:Other  

  • a‐Si:H 薄膜への高次シラン取り込みとSiネットワーク秩序性の関係

    田中和真, 原尚志, 石榴, 永石翔大, 中野慎也, 山下大輔, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    平成30年度九州表面・真空研究会2018(兼第23回九州薄膜表面研究会)  2018.6 

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    Event date: 2018.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州工業大学   Country:Japan  

  • プラズマCVD法で作製したa-Si:H 膜のSiH2/SiH 結合密度比の2次元分布

    石榴, 田中和真, 原尚志, 中野慎也, 山下大輔, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    平成30年度九州表面・真空研究会2018(兼第23回九州薄膜表面研究会)  2018.6 

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    Event date: 2018.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州工業大学   Country:Japan  

  • 格子整合条件を超えて原子平坦表面を実現する新規スパッタエピタキシー技術の開発~ZnO on sapphireを例に~(招待講演) Invited

    板垣奈穂, 岩崎和也, 古閑一憲, 白谷正治

    第65回応用物理学会春季学術講演会  2018.3 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  • プラズマ-触媒併用型二酸化炭素メタン変換における律速段階

    都甲将, 谷田知史, 山本瑛久, 古閑一憲, 白谷正治

    第65回応用物理学会春季学術講演会  2018.3 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  • スパッタエピタキシーにより作製した(ZnO)0.73(InN)0.27のフォトルミネッセンス

    宮原奈乃華, 岩崎和也, 石榴, 山下大輔, 中村大輔, 徐鉉雄, 古閑一憲, 白谷正治, 板垣奈穂

    第65回応用物理学会春季学術講演会  2018.3 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  • カーボン薄膜の選択プラズマCVD

    白谷正治, 方トウジュン, 山木健司, 徐鉉雄, 板垣奈穂, 古閑一憲

    平成30年電気学会全国大会  2018.3 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • Effects of Number Density of Seeds on Plant Growth Enhancement by Atmospheric Air Plasma Irradiation International conference

    Y. Wada, R. Sato, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    2nd International Workshop On Plasma Agriculture (IWOPA2)  2018.3 

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    Event date: 2018.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Takayama Civic Cultural Hall, Gifu   Country:Japan  

  • Cold Plasma Treatment Induces Changes in Seed Hormone Content and Explant Growth Invited International conference

    V. Mildaziene, R. Zukiene, L. Degutytė-Fomins, G. Pauzaite, J. Ziauka, K. Koga, M. Shiratani

    2nd International Workshop On Plasma Agriculture (IWOPA2)  2018.3 

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    Event date: 2018.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Takayama Civic Cultural Hall, Gifu   Country:Japan  

  • Impact of Plasma Agriculture on Global Vegetation Biomass Invited International conference

    M. Shiratani, K. Koga

    2nd International Workshop On Plasma Agriculture (IWOPA2)  2018.3 

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    Event date: 2018.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Takayama Civic Cultural Hall, Gifu   Country:Japan  

  • IoT-oriented solar cells fabricated using plasma-based nanotechnology (Invited) Invited International conference

    M. Shiratani, H. Seo, N. Itagaki, K. Koga

    10th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 11th International Conference on Plasma Nanotechnology and Science (ISPlasma2018/IC-PLANTS2018)  2018.3 

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    Event date: 2018.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Meijo University, Nagoya   Country:Other  

  • Pressure Gradient Sputtering to Achieve High Deposition Rate for Metal Thin Film International conference

    H. Ohta, K. Takahashi, Jun-Seok Oh, K. Koga, T. Nakatani, M. Ito, M. Shiratani, K. Yonezawa

    10th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 11th International Conference on Plasma Nanotechnology and Science (ISPlasma2018/IC-PLANTS2018)  2018.3 

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    Event date: 2018.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Meijo University, Nagoya   Country:Japan  

  • Analysis of Coupling of Interaction Fluctuation between Reactive Plasmas and Nanoparticles International conference

    R. Zhou, K. Mori, H. Ohtomo, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    10th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 11th International Conference on Plasma Nanotechnology and Science (ISPlasma2018/IC-PLANTS2018)  2018.3 

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    Event date: 2018.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Meijo University, Nagoya   Country:Japan  

  • A tailored voltage waveform plasma CVD method for carbon film deposition International conference

    K. Yamaki, T. Fang, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    10th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 11th International Conference on Plasma Nanotechnology and Science (ISPlasma2018/IC-PLANTS2018)  2018.3 

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    Event date: 2018.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Meijo University, Nagoya   Country:Japan  

  • Thin film deposition using low temperature plasmas: past, present, and future (Plenary) Invited International conference

    M. Shiratani, K. Koga, H. Seo, N. Itagaki

    4th International Workshop on Advanced Plasma Technology and Applications (The 4th IWAPTA workshop)  2018.2 

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    Event date: 2018.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:IPB International Convention Centre, Bogor   Country:Indonesia  

  • Plasma CVD of a-C:H films as protective layers for solar cells (Invited) Invited International conference

    M. Shiratani, T. Fang, K. Yamaki, K. Koga, D. Yamashita, H. Seo, N. Itagaki, K. Takenaka, Y. Setsuhara

    5th Korea-Japan Joint Symposium on Advanced Solar Cells 2018, 2nd International Symposium on Energy Research and Application  2018.2 

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    Event date: 2018.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sungkyunkwan University, Suwon   Country:Korea, Republic of  

  • Utilizing cluster cloud as a selective filter of deposition precursors of aSi:H films International conference

    S. Toko, T. Kojima, K. Koga, M. Shiratani

    5th Korea-Japan Joint Symposium on Advanced Solar Cells 2018, 2nd International Symposium on Energy Research and Application  2018.2 

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    Event date: 2018.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sungkyunkwan University, Suwon   Country:Korea, Republic of  

  • Reduction of activation energy of CO2 methanation reaction using plasma-catalytic method International conference

    A. Yamamoto, S. Toko, S. Tanida, K. Koga, M. Shiratani

    5th Korea-Japan Joint Symposium on Advanced Solar Cells 2018, 2nd International Symposium on Energy Research and Application  2018.2 

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    Event date: 2018.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sungkyunkwan University, Suwon   Country:Korea, Republic of  

  • SiH4 gas flow rate dependence of Si-H2 bond density at P/I interface in aSi:H solar cells fabricated by plasma CVD International conference

    K. Tanaka, H. Hara, S. Toko, T. Kojima, S. Nagaishi, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    5th Korea-Japan Joint Symposium on Advanced Solar Cells 2018, 2nd International Symposium on Energy Research and Application  2018.2 

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    Event date: 2018.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sungkyunkwan University, Suwon   Country:Korea, Republic of  

  • Enhancement on photovoltaic performance of dye-sensitized solar cells by applying up-conversion Y2O3:Er3 + nanoparticles International conference

    D. Sakamoto, B. Zhang, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    5th Korea-Japan Joint Symposium on Advanced Solar Cells 2018, 2nd International Symposium on Energy Research and Application  2018.2 

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    Event date: 2018.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sungkyunkwan University, Suwon   Country:Korea, Republic of  

  • Effect of additive on catalytic enhancement of polymer counter electrode in dye-sensitized solar cells International conference

    B. Zhang, D. Sakamoto, H. Seo, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    5th Korea-Japan Joint Symposium on Advanced Solar Cells 2018, 2nd International Symposium on Energy Research and Application  2018.2 

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    Event date: 2018.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sungkyunkwan University, Suwon   Country:Korea, Republic of  

  • Strategy for the commercialization of dye-sensitized solar cells Invited International conference

    H. Seo, D. Sakamoto, B. Zhang, N. Itagaki, K. Koga, M. Shiratani

    5th Korea-Japan Joint Symposium on Advanced Solar Cells 2018, 2nd International Symposium on Energy Research and Application  2018.2 

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    Event date: 2018.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sungkyunkwan University, Suwon   Country:Korea, Republic of  

  • 非平衡プラズマを用いたカーボンリサイクルによるエネルギー貯蔵

    谷田知史, 都甲将, 山本瑛久, 古閑一憲, 白谷正治

    九州大学エネルギーウィーク2018  2018.1 

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    Event date: 2018.1 - 2018.2

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学, アクロス福岡   Country:Japan  

  • プラズマ照射リンゴの味覚変化

    大井手芳徳, 古閑一憲, 白谷正治, 田原祐助, 都甲潔

    第3回味覚センサシンポジウム  2018.1 

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    Event date: 2018.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:日本教育会館   Country:Japan  

  • Ar プラズマ中で光捕捉した微粒子を用いたプラズマ揺動の評価

    大友洋, 森研人, 周靭, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第21回支部大会  2017.12 

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    Event date: 2017.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:佐賀大学   Country:Japan  

  • プラズマ CVD で作製した a-Si:H 積層膜の P/I 界面 SiH2結合量の基板温度依存性

    原尚志, 田中和真, 小島尚, 永石翔大, 都甲将, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第21回支部大会  2017.12 

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    Event date: 2017.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:佐賀大学   Country:Japan  

  • スパッタエピタキシーによる高品質(ZnO)0.8(InN)0.2薄膜の作製:スパッタリングガス圧力の影響

    竹内一登, 宮原奈乃華, 石榴, 岩崎和也, 山下大輔, 徐鉉雄, 古閑一憲, 白谷正治, 板垣奈穂

    プラズマ・核融合学会九州・沖縄・山口支部 第21回支部大会  2017.12 

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    Event date: 2017.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:佐賀大学   Country:Japan  

  • SiH4+N2マルチホロー放電プラズマ CVD による SiN 系膜の作製

    永石翔大, 小島尚, 田中和真, 原尚志, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第21回支部大会  2017.12 

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    Event date: 2017.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:佐賀大学   Country:Japan  

  • Ar/N2 スパッタリングによる高品質 ZnO 膜の作製:基板温度の影響

    村岡宗一郎, 岩崎和也, 呂佳豪, 山下大輔, 徐鉉雄, 古閑一憲, 白谷正治, 板垣奈穂

    プラズマ・核融合学会九州・沖縄・山口支部 第21回支部大会  2017.12 

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    Event date: 2017.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:佐賀大学   Country:Japan  

  • プラズマ CVD で作製した a-Si:H 薄膜の Si ネットワーク秩序性向上

    田中和真, 原尚志, 小島尚, 永石翔大, 都甲将, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第21回支部大会  2017.12 

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    Event date: 2017.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:佐賀大学   Country:Japan  

  • Fine Particle Plasma and Plasma Process (Invited) Invited International conference

    M. Shiratani, K. Koga

    18th Workshop on Fine Particle Plasmas  2017.12 

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    Event date: 2017.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:National Institute of Fusion Science, Gifu   Country:Japan  

  • Cross-spectrum Analysis of Interaction Fluctuation between Plasma and Nanoparticles in Capacitively-Coupled RF Discharge Reactive Plasmas International conference

    K. Mori, R. Zhou, H. Ohtomo, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    18th Workshop on Fine Particle Plasmas  2017.12 

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    Event date: 2017.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:National Institute of Fusion Science, Gifu   Country:Japan  

  • Cloud of a-Si:H Clusters as Selective Filter in SiH4 Multi-Hollow Discharge Plasma International conference

    T. Kojima, K. Tanaka, S. Nagaishi, H. Hara, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    18th Workshop on Fine Particle Plasmas  2017.12 

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    Event date: 2017.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:National Institute of Fusion Science, Gifu   Country:Japan  

  • Analysis of Inter-particle Fluctuation in Capacitively Coupled Low Pressure Ar Plasma Using Optical Tweezers International conference

    H. Ohtomo, K. Mori, R. Zhou, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    18th Workshop on Fine Particle Plasmas  2017.12 

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    Event date: 2017.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:National Institute of Fusion Science, Gifu   Country:Japan  

  • Fabrication of High-Mobility Nanocrystal-Free a-In2O3:Sn Films by Magnetron Sputtering with Impurity-Mediated Amorphization Method Invited International conference

    N. Itagaki, H. Wang, D. Yamashita, H. Seo, K. Koga, M. Shiratani

    27th annual meeting of MRS-J  2017.12 

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    Event date: 2017.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Fluctuation Analysis of An Optical Trapped Fine Particle in Ar Plasma International conference

    H. Ohtomo, K. Mori, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    27th annual meeting of MRS-J  2017.12 

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    Event date: 2017.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Advanced plasma process for next-generation photovoltaics Invited International conference

    H. Seo, N. Itagaki, K. Koga, M. Shiratani

    27th annual meeting of MRS-J  2017.12 

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    Event date: 2017.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Impact of Plasma Processing of Agricautural Food on Taste and Food Quality (Invited) Invited International conference

    M. Shiratani, K. Koga

    The 10th EU-Japan Joint Symposium on Plasma Processing (JSPP2017)  2017.12 

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    Event date: 2017.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Bankoku Shinryokan, Okinawa   Country:Japan  

  • Y2O3:Er のアップコンバージョン特性と太陽電池への応用

    坂本大輔, 張博辰, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治, 中村大輔

    2017年度応用物理学会九州支部学術講演会  2017.12 

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    Event date: 2017.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:宮崎観光ホテル   Country:Japan  

  • 低圧プラズマを用いた CO2 のメタン化反応の活性化エネルギー

    山本瑛久, 都甲将, 谷田知史, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    2017年度応用物理学会九州支部学術講演会  2017.12 

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    Event date: 2017.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:宮崎観光ホテル   Country:Japan  

  • 種子へのプラズマ照射のカイワレ大根の長さ分布に対する効果

    佐藤僚哉, 和田陽介, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    2017年度応用物理学会九州支部学術講演会  2017.12 

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    Event date: 2017.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:宮崎観光ホテル   Country:Japan  

  • Growth Enhancement of Sorghum by Plasma Irradiation to The Seeds International conference

    M. Shiratani, Y. Wada, R. Sato, D. Yamashita, H. Seo, N. Itagaki, K. Koga

    The 2nd Asian Applied Physics Conference (Asian-APC)  2017.12 

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    Event date: 2017.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Miyazaki Kanko Hotel   Country:Japan  

  • Effects of Gap between Electrodes and Seeds on Plasma Induced Plant Growth Enhancement International conference

    Y. Wada, R. Sato, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    The 2nd Asian Applied Physics Conference (Asian-APC)  2017.12 

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    Event date: 2017.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Miyazaki Kanko Hotel   Country:Japan  

  • Effects of electrode material on low pressure plasma-catalytic CO2 methanation International conference

    S. Tanida, S. Toko, A. Yamamoto, K. Koga, and M. Shiratani

    The 2nd Asian Applied Physics Conference (Asian-APC)  2017.12 

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    Event date: 2017.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Miyazaki Kanko Hotel   Country:Japan  

  • Photoluminescence from (ZnO)0.79(InN)0.21 films fabricated on sapphire substrates International conference

    N. Miyahara, K. Iwasaki, L. Shi, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    The 2nd Asian Applied Physics Conference (Asian-APC)  2017.12 

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    Event date: 2017.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Miyazaki Kanko Hotel   Country:Japan  

  • Correlation analysis between high energy electrons and nanoparticles in AM CCP International conference

    R. Zhou, K. Mori, H. Ohtomo, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    The 2nd Asian Applied Physics Conference (Asian-APC)  2017.12 

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    Event date: 2017.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Miyazaki Kanko Hotel   Country:Japan  

  • Sputtering Growth of SiC Films on Si(111) Substrates by using Impurity Mediated Crystallization Method International conference

    K. Imoto, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    The 2nd Asian Applied Physics Conference (Asian-APC)  2017.12 

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    Event date: 2017.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Miyazaki Kanko Hotel   Country:Japan  

  • Effects of Gas Pressure on Crystal Quality of ZION Films Fabricated by RF Magnetron Sputtering International conference

    L. Shi, N. Miyahara, D. Yamashita, H. Seo, J. Lyu, K. Koga, M. Shiratani, N. Itagaki

    The 2nd Asian Applied Physics Conference (Asian-APC)  2017.12 

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    Event date: 2017.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Miyazaki Kanko Hotel   Country:Japan  

  • 色素増感太陽電池のポリマー対向電極における触媒反応の活性化(招待講演) Invited

    徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    電子情報通信学会有機エレクトロニクス研究会  2017.12 

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    Event date: 2017.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:サンメッセ鳥栖   Country:Japan  

  • 未来の食を支えるプラズマ農業技術への挑戦(シンポジウム講演) Invited

    白谷正治, 古閑一憲

    Plasma Conference 2017  2017.11 

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    Event date: 2017.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:姫路商工会議所   Country:Japan  

  • プラズマ照射によって液体中に誘起される流れの定量解析

    川崎敏之, 足立拓也, 阿南翔太, 武井彰汰, 別宮竜之介, 山ノ内翔太, 伊東巧, 古閑一憲, 白谷正治

    Plasma Conference 2017  2017.11 

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    Event date: 2017.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:姫路商工会議所   Country:Japan  

  • プラズマプロセスにおけるtailored voltage waveformsの使用に向けての設計及びマッチング

    山木健司, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    Plasma Conference 2017  2017.11 

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    Event date: 2017.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:姫路商工会議所   Country:Japan  

  • 反応性プラズマとナノ粒子の相互作用ゆらぎのクロスコリレーション解析区間の比較

    周靭, 森研人, 大友洋, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    Plasma Conference 2017  2017.11 

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    Event date: 2017.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:姫路商工会議所   Country:Japan  

  • 光ピンセットを用いたArプラズマと単一微粒子との相互作用解析

    大友洋, 森研人, 周靭, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    Plasma Conference 2017  2017.11 

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    Event date: 2017.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:姫路商工会議所   Country:Japan  

  • 基板温度制御によるa-Si:H薄膜のSiネットワーク秩序性の向上

    田中和真, 小島尚, 都甲将, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    Plasma Conference 2017  2017.11 

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    Event date: 2017.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:姫路商工会議所   Country:Japan  

  • 植物種子の吸水に与える大気圧プラズマ照射の効果

    和田陽介, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    Plasma Conference 2017  2017.11 

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    Event date: 2017.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:姫路商工会議所   Country:Japan  

  • マグネトロンスパッタ法によるSi(111)基板上への高品質ZnO膜の作製:窒素添加バッファー層の効果

    岩崎和也, 呂佳豪, 山下大輔, 徐鉉雄, 古閑一憲, 白谷正治, 板垣奈穂

    Plasma Conference 2017  2017.11 

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    Event date: 2017.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:姫路商工会議所   Country:Japan  

  • Nanoparticle Composite Films: Fabrication and Functions (Invited) International conference

    M. Shiratani, K. Koga, H. Seo, N. Itagaki

    The 4th International Symposium on Hybrid Materials and Processing (HyMaP 2017)  2017.11 

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    Event date: 2017.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Busan   Country:Korea, Republic of  

  • Carbon Recycling using Low Temperature Plasma with Activated Catalysts International conference

    S. Tanida, S. Toko, K. Koga, A. Yamamoto, M. Shiratani

    The 4th International Symposium on Hybrid Materials and Processing (HyMaP 2017)  2017.11 

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    Event date: 2017.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Busan   Country:Korea, Republic of  

  • An Analysis on a Kinetic Motion of Optical Trapped Single Fine Particle in Ar Plasma International conference

    H. Ohtomo, K. Mori, Z. Ren, D. Yamashita H. Seo, N. Itagaki, K. Koga, M. Shiratani

    The 4th International Symposium on Hybrid Materials and Processing (HyMaP 2017)  2017.11 

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    Event date: 2017.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Busan   Country:Korea, Republic of  

  • Novel Fabrication Methods of Thin Films using Low Temperature Plasmas (Invited) Invited International conference

    M. Shiratani, K. Koga, H. Seo, N. Itagaki

    Taiwan Association for Coating and Thin Film Technology (TACT) 2017  2017.10 

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    Event date: 2017.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:National Dong Hwa University   Country:Taiwan, Province of China  

  • Photoluminescence from epitaxial (ZnO)x(InN)1-x films on sapphire substrates fabricated by RF magnetron sputtering International conference

    N. Miyahara, K. Iwasaki, L. Shi, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    Taiwan Association for Coating and Thin Film Technology (TACT) 2017  2017.10 

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    Event date: 2017.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:National Dong Hwa University   Country:Taiwan, Province of China  

  • Effects of gas flow rate ratio on structure of a-C:H films deposited using Ar + H2+ C7H8 plasma CVD International conference

    T. Fang, K. Yamaki, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani

    Taiwan Association for Coating and Thin Film Technology (TACT) 2017  2017.10 

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    Event date: 2017.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:National Dong Hwa University   Country:Taiwan, Province of China  

  • プラズマジェットによって液状ターゲット表面に供給されるROSの二次元分布に周囲ガスが与える影響

    足立拓也, 阿南翔太, 山ノ内翔太, 内田儀一朗, 竹中弘祐, 古閑一憲, 節原裕一, 白谷正治, 川崎敏之

    平成29年度(第70回)電気・情報関係学会九州支部連合大会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:琉球大学   Country:Japan  

  • 大気圧Heプラズマ照射によるヘアレスマウス皮膚への影響評価

    後藤典宏, 北﨑訓, 田中昭代, 平田美由紀, 中津可道, 古閑一憲, 白谷正治

    平成29年度(第70回)電気・情報関係学会九州支部連合大会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:琉球大学   Country:Japan  

  • プラズマ照射による模擬生体内ROS透過率の推定

    武井彰汰, 古閑一憲, 白谷正治, 川崎敏之

    平成29年度(第70回)電気・情報関係学会九州支部連合大会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:琉球大学   Country:Japan  

  • プラズマ照射によって液状媒体深さ方向に供給されるROSの同定への試み

    伊東巧, 武井彰汰, 別宮竜乃介, 古閑一憲, 白谷正治, 川崎敏之

    平成29年度(第70回)電気・情報関係学会九州支部連合大会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:琉球大学   Country:Japan  

  • Local Fluctuations of Plasma Detected with an Optically Trapped Fine Particle International conference

    M. Shiratani, H. Ohtomo, K. Mori, D. Yamashita, H. Seo, N. Itagaki, K. Koga

    1st Asia-Pacific Conference on Plasma Physics (AAPPS-DPP2017)  2017.9 

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    Event date: 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Jinniu Hotel, Chengdu   Country:China  

  • Effect of Gas flow rate ratio on the structure and properties of a-C:H films deposited using Ar + H2+ C7H8 Plasma CVD International conference

    T. Fang, K. Yamaki, K .Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani

    1st Asia-Pacific Conference on Plasma Physics (AAPPS-DPP2017)  2017.9 

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    Event date: 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Jinniu Hotel, Chengdu   Country:China  

  • Spatial Structure of Interactions between Nanoparticles and Low Pressure Plasmas (Invited) Invited International conference

    M. Shiratani, H. Seo, N. Itagaki, K. Koga

    11th Asian-European International Conference on Plasma Surface Engineering (AEPSE2017)  2017.9 

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    Event date: 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:International Convention Center Jeju   Country:Korea, Republic of  

  • Catalytic enhancement on polymer counter electrodes of dye-sensitized solar cells by isooctylphenoxy-polyethoxyethanol addition International conference

    B. Zhang, D. Sakamoto, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    11th Asian-European International Conference on Plasma Surface Engineering (AEPSE2017)  2017.9 

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    Event date: 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:International Convention Center Jeju   Country:Korea, Republic of  

  • Suppression of Si-H2 bond formation at P/I interface in a-Si:H solar cells fabricated by plasma CVD (Invited) International conference

    K. Tanaka, T. Kojima, S. Toko, D. Yamashita, Hy. Seo, N. Itagaki, K.Koga, M. Shiratani

    11th Asian-European International Conference on Plasma Surface Engineering (AEPSE2017)  2017.9 

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    Event date: 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:International Convention Center Jeju   Country:Korea, Republic of  

  • インジウムナノ粒子と三酸化インジウムのラット気管内投与による体内動態

    田中昭代, 平田美由紀, 松村渚, 古閑一憲, 白谷正治

    58回大気環境学会年会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:兵庫医療大学   Country:Japan  

  • スペクトル解析によるプラズマ中クラスター挙動の分類

    白谷正治, 小島尚, 都甲将, 田中和真, 徐鉉雄, 板垣奈穂, 古閑一憲

    第78回応用物理学会秋季学術講演会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場, 福岡国際センター   Country:Japan  

  • 容量結合型プラズマを用いたCO2メタン化におけるCO2変換率のガス流量依存性

    谷田知史, 都甲将, 山本瑛久, 古閑一憲, 白谷正治

    第78回応用物理学会秋季学術講演会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場, 福岡国際センター   Country:Japan  

  • 大気圧DBDプラズマ照射したリンゴの味評価

    大井手芳徳, 古閑一憲, 白谷正治, 田原祐助, 都甲潔

    第78回応用物理学会秋季学術講演会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場, 福岡国際センター   Country:Japan  

  • プラズマを用いた二酸化炭素のメタン化における電極表面の影響

    都甲将, 谷田知史, 古閑一憲, 白谷正治

    第78回応用物理学会秋季学術講演会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場, 福岡国際センター   Country:Japan  

  • 結晶Geナノ粒子膜の堆積とそのLiイオン電池への応用

    内田儀一郎, 古閑一憲, 白谷正治, 神原淳

    第78回応用物理学会秋季学術講演会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場, 福岡国際センター   Country:Japan  

  • 色素増感太陽電池のポリマー対向電極の触媒能のTriton X-100添加による向上

    張博辰, 坂本大輔, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    第78回応用物理学会秋季学術講演会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場, 福岡国際センター   Country:Japan  

  • 色素増感太陽電池におけるポリマー対向電極へのシリコンナノ粒子添加効果

    坂本大輔, 張博辰, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    第78回応用物理学会秋季学術講演会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場, 福岡国際センター   Country:Japan  

  • ポリマーナノコンポジットを用いた量子ドット増感太陽電池の対向電極

    徐鉉雄, 坂本大輔, 張博辰, 板垣奈穂, 古閑一憲, 白谷正治

    第78回応用物理学会秋季学術講演会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場, 福岡国際センター   Country:Japan  

  • 反応性プラズマ中ナノ粒子とプラズマの相互作用ゆらぎの起因解明

    森研人, 周靭, 大友洋, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    第78回応用物理学会秋季学術講演会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場, 福岡国際センター   Country:Japan  

  • 反応性プラズマとナノ粒子の相互作用ゆらぎの相関関係解析

    周靭, 森研人, 大友洋, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    第78回応用物理学会秋季学術講演会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場, 福岡国際センター   Country:Japan  

  • 窒素添加結晶化法による格子不整合基板上へのZnOエピタキシャル成長―窒素酸素共添加バッファー層の効果―

    呂佳豪, 岩崎和也, 山下大輔, 徐鉉雄, 古閑一憲, 白谷正治, 板垣奈穂

    第78回応用物理学会秋季学術講演会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場, 福岡国際センター   Country:Japan  

  • 窒素添加スパッタリング法を用いたSi(111)基板上への高品質ZnO薄膜の作製

    岩崎和也, 呂佳豪, 山下大輔, 徐鉉雄, 古閑一憲, 白谷正治, 板垣奈穂

    第78回応用物理学会秋季学術講演会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場, 福岡国際センター   Country:Japan  

  • 高圧マルチホロー放電プラズマCVD下流におけるラジカル成膜速度の時間変化

    小島尚, 都甲将, 田中和真, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    第78回応用物理学会秋季学術講演会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場, 福岡国際センター   Country:Japan  

  • ジャガイモの生育に対するプラズマ照射時間の影響

    和田陽介, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    第78回応用物理学会秋季学術講演会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場, 福岡国際センター   Country:Japan  

  • 不純物添加法を用いたSi(111)基板上へのSiC薄膜成長

    井本幸希, 山下大輔, 徐鉉雄, 古閑一憲, 白谷正治, 板垣奈穂

    第78回応用物理学会秋季学術講演会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場, 福岡国際センター   Country:Japan  

  • スパッタエピタキシーによるサファイア基板上へのIn-N rich (ZnO)x(InN)1-x膜の作製

    宮原奈乃華, 岩崎和也, 石榴, 徐鉉雄, 古閑一憲, 白谷正治, 板垣奈穂

    第78回応用物理学会秋季学術講演会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場, 福岡国際センター   Country:Japan  

  • RFマグネトロンスパッタリング法で作製したZION薄膜の結晶性に及ぼすガス圧力の影響

    石榴, 宮原奈乃華, 山下大輔, 徐鉉雄, 古閑一憲, 白谷正治, 板垣奈穂

    第78回応用物理学会秋季学術講演会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場, 福岡国際センター   Country:Japan  

  • P/I界面のSi-H2結合形成に対する基板温度の効果

    田中和真, 原尚志, 小島尚, 永石翔大, 都甲将, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    第78回応用物理学会秋季学術講演会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場, 福岡国際センター   Country:Japan  

  • Arプラズマ中で光捕捉された単一微粒子の運動解析

    大友洋, 森研人, 周靭, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    第78回応用物理学会秋季学術講演会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場, 福岡国際センター   Country:Japan  

  • 不純物添加スパッタリング法による高移動度・ナノ結晶フリー a-In2O3:Sn薄膜の作製

    板垣奈穂, 山下大輔, 徐鉉雄, 古閑一憲, 白谷正治

    第78回応用物理学会秋季学術講演会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場, 福岡国際センター   Country:Japan  

  • Non-thermal atmospheric-pressure plasma activation of herbal seeds indicating the acceleration of the plant’s germination period (OIM1) International conference

    E. Leal-Quiros, S. Banerjee, J.M.Contreras, K. Koga, M. Shiratani, F. Prakshi, S. Montesinos, Y. Alcantara, F. Avendano

    16th Latin American Workshop on Plasma Physics  2017.9 

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    Event date: 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Mexico City   Country:Mexico  

  • Effects of H2 flow rate on methanation of CO2 using low pressure nonthermal plasma International conference

    S. Toko, S. Tanida, K. Koga, M. Shiratani

    International Union of Materials Research Societies - The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)  2017.9 

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    Event date: 2017.8 - 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto University, Kyoto   Country:Japan  

  • Spatiotemporal structure of fluctuation of interactions between plasmas and nanoparticles in capacitively-coupled rf discharge reactive plasmas International conference

    K. Mori, H. Ohtomo, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    International Union of Materials Research Societies - The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)  2017.8 

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    Event date: 2017.8 - 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto University, Kyoto   Country:Japan  

  • Optical Trapping Process of Single Fine Particle in Ar Plasma International conference

    H. Ohtomo, K. Mori, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    International Union of Materials Research Societies - The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)  2017.8 

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    Event date: 2017.8 - 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto University, Kyoto   Country:Japan  

  • Next Generation Photovoltaics Based on Si Nano-particles Fabricated by Advanced Plasma Process International conference

    H. Seo, N. Itagaki, K. Koga, M. Shiratani

    International Union of Materials Research Societies - The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)  2017.8 

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    Event date: 2017.8 - 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto University, Kyoto   Country:Japan  

  • Fabrication of surface flat (ZnO)x(InN)1-x films on 3&#37;-lattice-mismatched a-sapphire substrates International conference

    N. Miyahara, K. Matsushima, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    International Union of Materials Research Societies - The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)  2017.8 

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    Event date: 2017.8 - 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto University, Kyoto   Country:Japan  

  • Effects of bias voltage on the surface morphology of a-C:H films deposited using Ar + H2+ C7H8 Plasma CVD International conference

    M. Shiratani, T. Fang, K. Yamaki, K. Koga, D. Yamashita, H. Seo, N. Itagaki

    International Union of Materials Research Societies - The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)  2017.8 

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    Event date: 2017.8 - 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto University, Kyoto   Country:Japan  

  • A Theoretical Model for Time Evolution of Radical Deposition Rate in Silane Plasma CVD International conference

    T. Kojima, S. Toko, K. Keya, K. Tanaka, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    International Union of Materials Research Societies - The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)  2017.8 

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    Event date: 2017.8 - 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto University, Kyoto   Country:Japan  

  • Inverse Stranski-Krastanov Growth of Single Crystalline ZnO-Based Semiconductors on Lattice Mismatched Substrates (Invited) Invited International conference

    N. Itagaki, K. Iwasaki, D. Yamashita, H. Seo, K. Koga, M. Shiratani

    International Union of Materials Research Societies - The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)  2017.8 

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    Event date: 2017.8 - 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto University, Kyoto   Country:Japan  

  • Fabrication of High-Mobility Amorphous In2O3:Sn Films by RF Magnetron Sputtering with Impurity-Mediated Amorphization Method (Keynote) Invited International conference

    N. Itagaki, T. Takasaki, H. Wang, D. Yamashita, H. Seo, K. Koga, M. Shiratani

    International Union of Materials Research Societies - The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)  2017.8 

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    Event date: 2017.8 - 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto University, Kyoto   Country:Japan  

  • Storage and Transportation of Reactive Oxygen Species in Tissue Phantom Irradiated with Non-thermal Plasma Jet International conference

    T. Kawasaki, K. Koga, M. Shiratani

    International Union of Materials Research Societies - The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)  2017.9 

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    Event date: 2017.8 - 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto University, Kyoto   Country:Japan  

  • Two-dimensional profile of RONS dose irradiated with a scalable DBD device International conference

    Y. Oide, T. Sarinont, R. Katayama, Y. Wada, T. Kawasaki, D. Yamashita, H. Seo, N. Itagaki, P. Attri, E. H. Choi, A. Tanaka, K. Koga, M. Shiratani

    International Union of Materials Research Societies - The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)  2017.8 

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    Event date: 2017.8 - 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto University, Kyoto   Country:Japan  

  • Growth enhancement of radish sprout using plasma activated river water and falls water International conference

    Y. Wada, T. Sarinont, Y. Oide, K. Koga, M. Shiratani

    International Union of Materials Research Societies - The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)  2017.8 

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    Event date: 2017.8 - 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto University, Kyoto   Country:Japan  

  • Catalytic Enhancement of Polymer Counter Electrode of Photochemical Photovoltaics based on Nano-particle Application International conference

    H. Seo, D. Sakamoto, H. Chou, N. Itagaki, K. Koga, M. Shiratani

    International Union of Materials Research Societies - The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)  2017.8 

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    Event date: 2017.8 - 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto University, Kyoto   Country:Japan  

  • Film thickness dependence of structure of a-Si:H thin films measured by Raman spectroscopy International conference

    K. Tanaka, S. Toko, K. Keya, T. Kojima, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    International Union of Materials Research Societies - The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)  2017.8 

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    Event date: 2017.8 - 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto University, Kyoto   Country:Japan  

  • Inverse Stranski-Krastanov Growth of Pit-Free Single Crystalline ZnO Films on Lattice Mismatched Substrates International conference

    N. Itagaki, K. Iwasaki, D. Yamashita, H. Seo, K. Koga, M. Shiratani

    29th International Conference on Defects in Semiconductors (ICDS2017)  2017.8 

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    Event date: 2017.7 - 2017.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Matsue, Shimane   Country:Japan  

  • Measurements of nitrogen and oxygen atom density in N2/Ar sputtering plasma for fabrication of high-mobility amorphous In2O3:Sn films International conference

    M. Shiratani, T. Takasaki, H. Wang, K. Matsushima, H. Seo, K. Koga, K. Takeda, M. Hori, and N. Itagaki

    International Conference on Phenomena in Ionized Gases (ICPIG 2017)  2017.7 

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    Event date: 2017.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Estoril Congress Center, Lisbon   Country:Portugal  

  • Suppression of Si-H2 bond formation at P/I interface in a-Si:H solar cells deposited by multi-hollow discharge plasma CVD International conference

    S. Toko, K. Tanaka, K. Keya, T. Kojima, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    International Conference on Phenomena in Ionized Gases (ICPIG 2017)  2017.7 

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    Event date: 2017.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Estoril Congress Center, Lisbon   Country:Portugal  

  • Rise time of Sabatier process using low pressure and low temperature plasma International conference

    S. Toko, S. Tanida, K. Koga, M. Shiratani

    International Conference on Phenomena in Ionized Gases (ICPIG 2017)  2017.7 

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    Event date: 2017.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Estoril Congress Center, Lisbon   Country:Portugal  

  • インジウムナノ粒子のラット気管投与による体内動態

    田中昭代, 平田美由紀, 松村渚, 古閑一憲, 白谷正治

    第26回日本微量元素学会学術集会  2017.7 

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    Event date: 2017.7

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  • Carbon recycling using Cu catalyst together with low pressure capacitively-coupled plasma International conference

    M. Shiratani, S. Toko, S. Tanida, K. Koga

    2017 International Forum on Functional Materials (IFFM2017)  2017.6 

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    Event date: 2017.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ramada Plaza Jeju Hotel, Jeju   Country:Korea, Republic of  

  • a‐Si:H 薄膜中の Si ネットワーク秩序性のラマン分光法を⽤いた評価

    田中和真, 小島尚, 都甲将, ⼭下⼤輔, 徐鉉雄, 板垣奈穂, 古閑⼀憲, 白谷正治

    平成29年度九州表面・真空研究会2017(兼第22回九州薄膜表面研究会)  2017.6 

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    Event date: 2017.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:佐賀大学   Country:Japan  

  • ⾊素増感太陽電池におけるナノ粒⼦を⽤いた表⾯改質によるポリマー触媒の反応活性化

    坂本⼤輔, 張博辰, 徐鉉雄, 板垣奈穂, 古閑⼀憲, 白谷正治

    平成29年度九州表面・真空研究会2017(兼第22回九州薄膜表面研究会)  2017.6 

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    Event date: 2017.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:佐賀大学   Country:Japan  

  • プラズマジェット照射による酸化反応の KI-デンプン試薬による二次元分布可視化(受賞講演) Invited

    川崎敏之, 古閑一憲, 白谷正治, 内田儀一郎, 竹中弘祐, 節原裕一

    大阪大学接合科学研究所第14回産学連携シンポジウム  2017.5 

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    Event date: 2017.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪大学   Country:Japan  

  • 大気圧低温プラズマのヘアレスマウス皮膚照射による影響評価

    田中昭代, 北崎訓, 平田美由紀, 中津可道, 古閑一憲, 白谷正治

    第87回日本衛生学会学術総会  2017.3 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:フェニックス・シーガイア・リゾート, 宮崎   Country:Japan  

  • プラズマとナノ粒子の相互作用ゆらぎのモード間相関

    森研人, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    日本物理学会第72回年次大会(2017年)  2017.3 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪大学   Country:Japan  

  • スパッタ支援層交換で作製したポリイミド基板上結晶Ge薄膜の膜質

    白谷正治, 田浪荘汰, 坂本大輔, 張博辰, 徐鉉雄, 山下大輔, 板垣奈穂, 古閑一憲

    第64回応用物理学会春季学術講演会  2017.3 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  • プラズマを用いたCO2 のメタン化反応の考察

    都甲将, 谷田知史, 古閑一憲, 白谷正治

    第64回応用物理学会春季学術講演会  2017.3 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  • マルチホロー放電プラズマCVD下流におけるラジカル製膜速度と膜中クラスター混入量の動的振る舞い

    都甲将, 小島尚, 毛屋公孝, 田中和真, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    第64回応用物理学会春季学術講演会  2017.3 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  • RFマグネトロンスパッタにより格子不整合基板上に作製した表面平坦ZION薄膜

    宮原奈乃華, 松島宏一, 徐鉉雄, 古閑一憲, 白谷正治, 板垣奈穂

    第64回応用物理学会春季学術講演会  2017.3 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  • 色素増感太陽電池の触媒としてのポリマーナノコンポジット

    徐鉉雄, 坂本大輔, 板垣奈穂, 古閑一憲, 白谷正治

    第64回応用物理学会春季学術講演会  2017.3 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  • RFマグネトロンスパッタリング法で作製した(ZnO)x(InN)1-x膜のフォトルミネッセンス

    松島宏一, 宮原奈乃華, 岩崎和也, 山下大輔, 徐鉉雄, 古閑一憲, 白谷正治, 板垣奈穂

    第64回応用物理学会春季学術講演会  2017.3 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  • a-Si:H太陽電池P/I界面におけるSi-H2結合評価

    都甲将, 田中和真, 小島尚, 毛屋公孝, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    第64回応用物理学会春季学術講演会  2017.3 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  • Effects of atmospheric pressure plasma to various plant families on plant growth enhancement

    M. Shiratani, T. Sarinont, Y. Wada, R. Katayama, Y. Oide, K. Koga

    第64回応用物理学会春季学術講演会  2017.3 

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    Event date: 2017.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  • 大気圧DBD装置の活性種照射量の放電電力密度依存性

    白谷正治, 片山龍, 北﨑訓, T. Sarinont, 大井手芳徳, 和田陽介, 古閑一憲, 山下大輔, 徐鉉雄, 板垣奈穂, Attri Pankaj, Eun Ha Choi, 田中昭代

    第64回応用物理学会春季学術講演会  2017.3 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:パシフィコ横浜   Country:Japan  

  • Time evolution of CH4 yield in methanation of CO2 using helicon discharge plasma International conference

    S. Tanida, S. Toko, R. Katayama, K. Koga, M. Shiratani

    9th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 10th International Conference on Plasma Nanotechnology and Science (ISPlasma2017/IC-PLANTS2017)  2017.3 

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    Event date: 2017.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Chubu University   Country:Japan  

  • Transportation of reative oxygen species through a tissue phantom by plasmajet irradiation International conference

    T. Kawasaki, G. Kuroeda, R. Sei, M. Yamaguchi, R. Yoshinaga, R. Yamashita, H. Tasaki, K. Koga, M. Shiratani

    9th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 10th International Conference on Plasma Nanotechnology and Science (ISPlasma2017/IC-PLANTS2017)  2017.3 

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    Event date: 2017.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Chubu University   Country:Japan  

  • Low Temperature Air Plasma Irradiation to Rice Seeds International conference

    M. Shiratani, T. Sarinont, Y. Wada, K. Koga

    34th Symposium on Plasma Processing (SPP34) / The 29th Symposium on Plasma Science for Materials (SPSM29)  2017.1 

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    Event date: 2017.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hokkaido University   Country:Japan  

  • Si Nanoparticles Fabricated by Multi-hollow Discharge Plasma Chemical Vapor Deposition and their Photovoltaic Application International conference

    D. Sakamoto, H. Chou, S. Tanami, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    34th Symposium on Plasma Processing (SPP34) / The 29th Symposium on Plasma Science for Materials (SPSM29)  2017.1 

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    Event date: 2017.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hokkaido University   Country:Japan  

  • Theoretical Consideration on Methane Production Using Plasma on Mars International conference

    S. Toko, S. Tanida, K. Koga, M. Shiratani

    34th Symposium on Plasma Processing (SPP34) / The 29th Symposium on Plasma Science for Materials (SPSM29)  2017.1 

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    Event date: 2017.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hokkaido University   Country:Japan  

  • Effects of P-layer of PIN a-Si:H solar cells on Si-H2/Si-H bond ratio at P/I interface International conference

    K. Keya, K. Tanaka, T. Kojima, S. Toko, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    34th Symposium on Plasma Processing (SPP34) / The 29th Symposium on Plasma Science for Materials (SPSM29)  2017.1 

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    Event date: 2017.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hokkaido University   Country:Japan  

  • Influence of Plasma Irradiation on Silkworm International conference

    A. Yonesu, K. Koga, M. Shiratani, N. Hayashi

    34th Symposium on Plasma Processing (SPP34) / The 29th Symposium on Plasma Science for Materials (SPSM29)  2017.1 

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    Event date: 2017.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hokkaido University   Country:Japan  

  • DC bias voltage dependence of dust transport in a compact dust trajectory analyzer International conference

    R. Katayama, T. Fang, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, S. Masuzaki, N. Ashikawa, M. Tokitani, K. Nishimura, A. Sagara

    17th Workshop on Fine Particle Plasmas and JAPAN-KOREA Workshop on Dust Particles 2016  2016.12 

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    Event date: 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:National Institute of Fusion Science, Gifu   Country:Japan  

  • Comparison of biological effects between plasma and gamma-ray radiation International conference

    M. Shiratani, T. Sarinont, P. Attri, K. Koga

    26th annual meeting of MRS-J  2016.12 

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    Event date: 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Time evolution of electron temperature and amount of cluster incorporation into films in SiH4 multi-hollow plasma CVD International conference

    T. Kojima, S. Toko, K. Keya, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    26th annual meeting of MRS-J  2016.12 

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    Event date: 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Spatial distribution of Si-H2 bond density in a-Si:H film evaluated by microscopic FTIR International conference

    K. Tanaka, T. Kojima, K. Keya, S. Toko, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    26th annual meeting of MRS-J  2016.12 

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    Event date: 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Properties of Au-induced layer-exchange crystalline Ge formed by sputtering deposition International conference

    S. Tanami, Y. Oide, D. Sakamoto, H. Seo, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    26th annual meeting of MRS-J  2016.12 

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    Event date: 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Interaction potential fluctuation between binary collisions of fine particles suspended in low pressure Ar rf plasmas International conference

    M. Soejima, H. Ohtomo, K. Mori, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    26th annual meeting of MRS-J  2016.12 

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    Event date: 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • High-mobility transparent amorphous In2O3:Ge films fabricated by impurity mediated amorphization method International conference

    T. Takasaki, H. Wang, N. Miyahara, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    26th annual meeting of MRS-J  2016.12 

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    Event date: 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Effects of Sputtering Gas Composition on Properties of ZnO Prepared by Nitrogen Mediated Crystallization Method International conference

    N. Miyahara, T. Ide, K. Iwasaki, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    26th annual meeting of MRS-J  2016.12 

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    Event date: 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Effects of P-layer of PIN a-Si:H solar cells on Si-H2 bond formation at P/I interface International conference

    K. Keya, K. Tanaka, T. Kojima, S. Toko, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    26th annual meeting of MRS-J  2016.12 

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    Event date: 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Effects of modulation frequency on interaction fluctuation between plasma and nanoparticles International conference

    K. Mori, M. Soejima, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    26th annual meeting of MRS-J  2016.12 

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    Event date: 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Effects of electrostatic field direction on dust accumulation to mirror in a plasma reactor International conference

    R. Katayama, T. Fang, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, S. Masuzaki, N. Ashikawa, M. Tokitani, K. Nishimura, A. Sagara

    26th annual meeting of MRS-J  2016.12 

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    Event date: 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Effects of bias voltage on mass density of a-C:H films deposited using Ar + H2+ C7H8 Plasma CVD International conference

    T. Fang, K. Yamaki, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani

    26th annual meeting of MRS-J  2016.12 

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    Event date: 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Dependence of internal resistance by the quantity of Si nanoparticles on polymer counter electrode in dye-sensitized solar cells International conference

    D. Sakamoto, H. Chou, Y. Oide, S. Tanami, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    26th annual meeting of MRS-J  2016.12 

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    Event date: 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Characteristic length of position fluctuation of a single fine particle optically trapped in Ar plasma International conference

    H. Ohtomo, M. Soejima, K. Mori, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    26th annual meeting of MRS-J  2016.12 

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    Event date: 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Discharge power dependence of methanation of CO2 under low pressure International conference

    S. Toko, R. Katayama, S. Tanida, K. Koga, M. Shiratani

    26th annual meeting of MRS-J  2016.12 

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    Event date: 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Stimulation of germinability of seeds under various gas plasma activated water International conference

    Y. Wada, T. Sarinont, R. Katayama, K. Koga, M. Shiratani

    26th annual meeting of MRS-J  2016.12 

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    Event date: 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Effects of plasma irradiation on growth of wheat and melon International conference

    T. Sarinont, Y. Wada, R. Katayama, K. Koga, M. Shiratani

    26th annual meeting of MRS-J  2016.12 

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    Event date: 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Analyses of Oxidative Mutagenesis and Carcinogenesis Using Genetically Modified Mice: Application to Plasma Medicine (Invited) Invited International conference

    Y. Nakatsu, N. Takano, M. Ohno, S. Kitazaki, K. Koga, A. Tanaka, M. Shiratani, T. Tsuzuki

    26th annual meeting of MRS-J  2016.12 

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    Event date: 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Sputtering growth of (ZnO)x(InN)1-x semiconductor: a ZnO-based compound with bandgap tunability over the entire visible spectrum (Invited) Invited International conference

    N. Itagaki, K. Matsushima, D. Ymashita, H. Seo, K. Koga, M. Shiratani

    26th annual meeting of MRS-J  2016.12 

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    Event date: 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • プラズマを用いたサバティエ反応によるCH4生成速度の理論的検討

    都甲将, 谷田知史, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第20回支部大会  2016.12 

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    Event date: 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • 反応性プラズマとナノ粒子の相互作用ゆらぎの時空間構造

    森研人, 添島雅大, 大友洋, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第20回支部大会  2016.12 

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    Event date: 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • 大気圧DBDジェット装置のRONS照射量比較実験

    片山龍, サリノント タパナット, 大井手芳徳, 和田陽介, 古閑一憲, 山下大輔, 徐鉉雄, 板垣奈穂, Pankaj Attri, 田中昭代, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第20回支部大会  2016.12 

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    Event date: 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • マルチホロー放電プラズマCVD法で製膜されたa-Si:H薄膜のSi-H2結合密度の面内分布

    田中和真, 毛屋公孝, 都甲将, 小島尚, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第20回支部大会  2016.12 

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    Event date: 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • マルチホロー放電プラズマCVD下流領域におけるクラスター輸送量と膜中クラスター混入量の関係

    小島尚, 都甲将, 毛屋公孝, 田中和真, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第20回支部大会  2016.12 

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    Event date: 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • ポリイミドフィルム上へのプラズマ支援Au誘起低温高速層交換Ge結晶成長

    田浪荘汰, 坂本大輔, 張博辰, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第20回支部大会  2016.12 

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    Event date: 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • プラズマ中微粒子の相互作用計測

    添島雅大, 大友洋, 森研人, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第20回支部大会  2016.12 

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    Event date: 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • プラズマ中微粒子の光捕捉

    大友洋, 添島雅大, 森研人, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第20回支部大会  2016.12 

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    Event date: 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • プラズマプロセスによって作成されたSiナノ粒子の光電変換特性

    張博辰, 坂本大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第20回支部大会  2016.12 

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    Event date: 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • プラズマCVDにより作製されたナノ粒子を用いることによるポリマー薄膜の性能向上

    坂本大輔, 張博辰, 田浪荘汰, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第20回支部大会  2016.12 

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    Event date: 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • スパッタ製膜圧力が窒素添加ZnO膜の表面形状に与える影響

    岩崎和也, 山下大輔, 徐鉉雄, 古閑一憲, 白谷正治, 板垣奈穂

    プラズマ・核融合学会九州・沖縄・山口支部 第20回支部大会  2016.12 

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    Event date: 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • Scalable DBDによるRONS照射量の二次元分布

    大井手芳徳, 片山龍, サリノント タパナット, 和田陽介, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第20回支部大会  2016.12 

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    Event date: 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • Ar+H2+C7H8プラズマCVD法におけるアモルファス水素化炭素膜に対する水素流量比の影響

    方韜鈞, 山木健司, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第20回支部大会  2016.12 

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    Event date: 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • Ar/N2/O2スパッタによるZnO薄膜の高品質エピタキシャル成長

    宮原奈乃華, 井手智章, 岩崎和也, 山下大輔, 徐鉉雄, 古閑一憲, 白谷正治, 板垣奈穂

    プラズマ・核融合学会九州・沖縄・山口支部 第20回支部大会  2016.12 

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    Event date: 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • Ar/N2 スパッタリングプラズマにより作製したアモルファスITO膜の表面形状

    王寒, 高崎俊行, 松島宏一, 岩崎和也, 宮原奈及華, 古閑一憲, 白谷正治, 板垣奈穂

    プラズマ・核融合学会九州・沖縄・山口支部 第20回支部大会  2016.12 

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    Event date: 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • マルチホロー放電プラズマCVD法で製膜されたPIN a-Si:H太陽電池の安定性に界面が及ぼす影響

    毛屋公孝, 田中和真, 小島尚, 都甲将, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第20回支部大会  2016.12 

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    Event date: 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • アモルファスITO成膜用Ar/N2スパッタプラズマ中の窒素原子密度の測定

    高崎俊行, 王寒, 松島宏一, 竹田圭吾, 堀勝, 古閑一憲, 白谷正治, 板垣奈穂

    プラズマ・核融合学会九州・沖縄・山口支部 第20回支部大会  2016.12 

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    Event date: 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • 容量結合RFプラズマを用いた低温低圧下におけるCO2のメタン化

    谷田知史, 都甲将, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第20回支部大会  2016.12 

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    Event date: 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • 大気圧DBDプラズマによる植物収穫量の向上

    サリノント タパナット, 和田陽介, 片山龍, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第20回支部大会  2016.12 

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    Event date: 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • シロイヌナズナ種子へのプラズマ照射効果に対する前処理の影響

    和田陽介, サリノント タパナット, 片山龍, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第20回支部大会  2016.12 

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    Event date: 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • Plasma anisotropic CVD of carbon films from toluene (Invited) Invited International conference

    M. Shiratani, X. Dong, H. Seo, N. Itagaki, K. Koga

    6th International Conference on Advanced Plasma Technologies (ICAPT-6)  2016.12 

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    Event date: 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Siem Reap   Country:Cambodia  

  • 大気圧 DBDプラズマを照射した水のRONS濃度の水量依存性

    和田陽介, サリノント タパナット, 片山龍, 古閑一憲, 白谷正治

    平成28年度応用物理学会九州支部学術講演会  2016.12 

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    Event date: 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:対馬市交流センター, 長崎   Country:Japan  

  • Effects of atmospheric air plasma irradiation to a part of seeds on growth of plants International conference

    Y. Wada, T. Sarinont, R. Katayama, K. Koga, M. Shiratani

    The 1st Asian Applied Physics Conference (Asian-APC)  2016.12 

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    Event date: 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tsushima, Nagasaki   Country:Japan  

  • マルチホロー放電プラズマ中のクラスターサイズ・密度の放電時間依存性

    小島尚, 都甲将, 毛屋公孝, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    平成28年度応用物理学会九州支部学術講演会  2016.12 

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    Event date: 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:対馬市交流センター, 長崎   Country:Japan  

  • PEDOT:PSS 薄膜の導電性向上

    坂本大輔, 張博辰, 大井手芳徳, 田浪荘汰, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    平成28年度応用物理学会九州支部学術講演会  2016.12 

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    Event date: 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:対馬市交流センター, 長崎   Country:Japan  

  • Enhancement of fill factor (FF) of dye-sensitized solar cell by means of counter polymer electrode containing Si nanoparticles International conference

    D. Sakamoto, H. Chou, Y. Oide, S. Tanami, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    The 1st Asian Applied Physics Conference (Asian-APC)  2016.12 

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    Event date: 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tsushima, Nagasaki   Country:Japan  

  • Effects of pulse discharge on cluster transport in downstream region of multi-hollow discharge CVD plasma International conference

    T. Kojima, S. Toko, K. Keya, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    The 1st Asian Applied Physics Conference (Asian-APC)  2016.12 

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    Event date: 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tsushima, Nagasaki   Country:Japan  

  • Catalytic characteristics and photovoltaic application of polymer nano-composite International conference

    H. Seo, D. Sakamoto, N. Itagaki, K. Koga, M. Shiratani

    The 1st Asian Applied Physics Conference (Asian-APC)  2016.12 

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    Event date: 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tsushima, Nagasaki   Country:Japan  

  • 低圧プラズマによるCO2変換への放電電力・ガス滞在時間の効果

    都甲将, 谷田知史, 古閑一憲, 白谷正治

    平成28年度応用物理学会九州支部学術講演会  2016.12 

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    Event date: 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:対馬市交流センター, 長崎   Country:Japan  

  • 大気圧プラズマジェット照射による模擬生体中へのROSの供給

    黒枝剛哉, 清竜平, 山口真央, 吉永怜史, 山下莉穂, 田崎光, 川崎敏之, 内田儀一郎, 古閑一憲, 白谷正治

    平成28年度応用物理学会九州支部学術講演会  2016.12 

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    Event date: 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:対馬市交流センター, 長崎   Country:Japan  

  • Blue and Green Photoluminescence of (ZnO)0.92(InN)0.08 International conference

    K. Matsushima, K. Iwasaki, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    2016 MRS Fall Meeting & Exhibit  2016.12 

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    Event date: 2016.11 - 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston, Massachusetts   Country:Other  

  • Plant Growth Enhancement of Seeds Immersed in Plasma Activated Water International conference

    T. Sarinont, K. Koga, M. Shiratani

    2016 MRS Fall Meeting & Exhibit  2016.11 

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    Event date: 2016.11 - 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston, Massachusetts   Country:Other  

  • Measurements of Absolute N Atom Density in Ar/N2 Sputtering Plasma during Heteroepitaxial Growth of Single Crystalline ZnO Films on Sapphire Substrates International conference

    K. Iwasaki, T. Ide, K. Matsushima, T. Takasaki, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    2016 MRS Fall Meeting & Exhibit  2016.12 

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    Event date: 2016.11 - 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston, Massachusetts   Country:Other  

  • Effects of particle size on catalytic characteristics of polymer counter electrode containing Si nanoparticles in dye-sensitized solar cells International conference

    D. Sakamoto, Y. Oide, S. Tanami, H. Seo, N. Itagaki, K. Koga, and M. Shiratani

    26th International Photovoltaic Science and Engineering Conference (PVSEC-26)  2016.10 

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    Event date: 2016.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sands Expo and Convention Centre   Country:Singapore  

  • Room temperature fabrication of high-mobility amorphous In2O3:Sn films via nitrogen-mediated amorphization method International conference

    T. Takasaki, W. Han, K. Iwasaki, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    26th International Photovoltaic Science and Engineering Conference (PVSEC-26)  2016.10 

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    Event date: 2016.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sands Expo and Convention Centre   Country:Singapore  

  • Low cost dye-sensitized solar cells based on polymer composite catalyst International conference

    D. Sakamoto, H. Seo, S. Tanami, Y. Oide, N. Itagaki, K. Koga, M. Shiratani

    26th International Photovoltaic Science and Engineering Conference (PVSEC-26)  2016.10 

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    Event date: 2016.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sands Expo and Convention Centre   Country:Singapore  

  • Effect of photocatalyst TiO2 on the long-term stability of dye-sensitized solar cells International conference

    T. Takasaki, H. Seo, N. Itagaki, K. Koga, and M. Shiratani

    26th International Photovoltaic Science and Engineering Conference (PVSEC-26)  2016.10 

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    Event date: 2016.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sands Expo and Convention Centre   Country:Singapore  

  • Advantages of Plasma Agriculture International conference

    M. Shiratani, T. Sarinont, K. Koga

    The First International Conference on Hybridized Agriculture(HA2016)  2016.10 

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    Event date: 2016.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sojo University   Country:Japan  

  • 大気圧プラズマジェット照射によって模擬生体内を輸送された ROS の二次元濃度分布

    川崎敏之, 内田儀一郎, 古閑一憲, 白谷正治

    第40回静電気学会全国大会  2016.9 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:群馬大学   Country:Japan  

  • Plasma assisted plant growth enhancement for agricultural yield enhancement (Invited) Invited International conference

    M. Shiratani, K. Koga

    The 6th International Conference on Microelectronics and Plasma Technology (ICMAP 2016)  2016.9 

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    Event date: 2016.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Dream Center, Gyeongju   Country:Korea, Republic of  

  • Catalytic enhancement on polymer composite counter electrode for low cost quantum dot-sensitized solar cells International conference

    H. Seo, D. Sakamoto, C. V. V. M. Gopi, M. Kim, H. J. Kim, N. Itagaki, K. Koga, M. Shiratani

    The 6th International Conference on Microelectronics and Plasma Technology (ICMAP 2016)  2016.9 

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    Event date: 2016.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Dream Center, Gyeongju   Country:Korea, Republic of  

  • バンドギャップチューニング可能なZnO系新半導体材料の開発(プラズマエレクトロニクス賞受賞記念講演) Invited

    板垣奈穂, 松島宏一, 山下大輔, 徐鉉雄, 古閑一憲, 白谷 正治

    第77回応用物理学会秋季学術講演会  2016.9 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ, 新潟   Country:Japan  

  • ヘリコンプラズマを用いた低温低圧下におけるCO2からのCH4生成

    都甲将, 片山龍, 谷田知史, 古閑一憲, 白谷正治

    第77回応用物理学会秋季学術講演会  2016.9 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ, 新潟   Country:Japan  

  • 反応性プラズマとナノ粒子の相互作用ゆらぎの時空間構造解析

    森研人, 添島雅大, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    第77回応用物理学会秋季学術講演会  2016.9 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ, 新潟   Country:Japan  

  • マルチホロー放電プラズマ下流における電場とクラスター輸送の関係

    小島尚, 都甲将, 毛屋公孝, 田中和真, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    第77回応用物理学会秋季学術講演会  2016.9 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ, 新潟   Country:Japan  

  • p層上に堆積したintrinsic a-Si:H中のSi-H2/Si-H結合比に対する界面の影響

    毛屋公孝, 田中和真, 小島尚, 都甲将, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    第77回応用物理学会秋季学術講演会  2016.9 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:朱鷺メッセ, 新潟   Country:Japan  

  • A comparative study for action of gamma and plasma irradiation dose on thermodynamics of protein International conference

    M. Shiratani, P. Attri, T. Sarinont, E. H. Choi, K. Koga

    6th International Conference on Plasma Medicine (ICPM6)  2016.9 

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    Event date: 2016.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Slovak University of Technology   Country:Other  

  • A comparative study of reactive oxygen species dose provided by atmospheric plasma and gamma ray irradiation using iodine-starch reaction International conference

    T. Sarinont, P. Attri, E. H. Choi, K. Koga, M. Shiratani

    6th International Conference on Plasma Medicine (ICPM6)  2016.9 

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    Event date: 2016.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Slovak University of Technology   Country:Other  

  • Effects of plasma-irradiation distance on ROS and RNS productions in liquid International conference

    G. Uhcida, A. Nakajima, T. Ito, K. Takenaka, T. Kawasaki, K. Koga, M. Shiratani, Y. Setsuhara

    6th International Conference on Plasma Medicine (ICPM6)  2016.9 

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    Event date: 2016.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Slovak University of Technology   Country:Other  

  • 低圧ヘリコン放電プラズマを用いたCO2のメタン化

    谷田知史, 都甲将, 片山龍, 古閑一憲, 白谷正治

    第10回プラズマエレクトロニクスインキュベーションホール  2016.9 

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    Event date: 2016.8 - 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:国立中央青少年交流の家, 静岡   Country:Japan  

  • マルチホロー放電プラズマCVD法によって作成されたSiナノ粒子の量子測定と太陽電池への応用

    張博辰, 坂本大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    第10回プラズマエレクトロニクスインキュベーションホール  2016.9 

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    Event date: 2016.8 - 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:国立中央青少年交流の家, 静岡   Country:Japan  

  • プラズマ中でレーザートラップされた微粒子を用いたプラズマのその場計測

    大友洋, 添島雅大, 森研人, 山下大輔, 徐鉉雄, 古閑一憲, 板垣奈穂, 白谷正治

    第10回プラズマエレクトロニクスインキュベーションホール  2016.9 

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    Event date: 2016.8 - 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:国立中央青少年交流の家, 静岡   Country:Japan  

  • ナノ粒子制御による高光安定なa-Si:H太陽電池セルの作成

    田中和真, 毛屋公孝, 鳥越祥宏, 都甲将, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    第10回プラズマエレクトロニクスインキュベーションホール  2016.9 

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    Event date: 2016.8 - 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:国立中央青少年交流の家, 静岡   Country:Japan  

  • Inter-Particle Potential Fluctuation of Two Fine Particles Suspended in Ar Plasmas International conference

    M. Soejima, K. Koga, M. Shiratani

    16th International Conference On Nanotechnology (IEEE NANO 2016)  2016.8 

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    Event date: 2016.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sendai International Center   Country:Japan  

  • Time evolution of radical deposition rate and cluster amount (Invited) Invited International conference

    M. Shiratani, S. Toko, Y. Torigoe, K. Keya, T. Kojima, H. Seo, N. Itagaki and K. Koga

    20th International Vacuum Congress (IVC-20)  2016.8 

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    Event date: 2016.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Busan Exhibition Convention Center   Country:Korea, Republic of  

  • Methanation of CO2 by low pressure helicon plasma discharge International conference

    S. Toko, R. Katayama, K. Koga, M. Shiratani

    20th International Vacuum Congress (IVC-20)  2016.8 

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    Event date: 2016.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Busan Exhibition Convention Center   Country:Korea, Republic of  

  • Effects of atmospheric pressure plasma irradiation to plant seeds put in magnetic field on the plant growth International conference

    T. Sarinont, P. Attri, K. Koga, M. Shiratani

    20th International Vacuum Congress (IVC-20)  2016.8 

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    Event date: 2016.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Busan Exhibition Convention Center   Country:Korea, Republic of  

  • Surface modification of polymeric catalyst for the catalytic enhancement of dye and quantum dot sensitized solar cells International conference

    H. Seo, M. K. Son, S. Tanami, N. Itagaki, K. Koga, M. Shiratani

    20th International Vacuum Congress (IVC-20)  2016.8 

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    Event date: 2016.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Busan Exhibition Convention Center   Country:Korea, Republic of  

  • Catalytic Activation of Polymer Composite Catalyst for Photochemical Solar Cells International conference

    H. Seo, M. Son, S. Tanami, N. Itagaki, K. Koga, M. Shiratani

    The 67th Annual Meeting of the International Society of Electrochemistry  2016.8 

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    Event date: 2016.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:The Hague   Country:Netherlands  

  • Effects of RF power on Au-induced layer-exchange crystalline Ge formation using sputtering deposition International conference

    S. Tanami, Y. Oide, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    20th International Vacuum Congress (IVC-20)  2016.8 

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    Event date: 2016.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Busan Exhibition Convention Center   Country:Korea, Republic of  

  • インジウムナノ粒子のラット皮下投与による体内動態

    田中昭代, 平田美由紀, 松村渚, 古閑一憲, 白谷正治

    第27回日本微量元素学会学術集会  2016.7 

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    Event date: 2016.7

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都大学   Country:Japan  

  • Envelope analysis and cross correlation analysis of plasma perturbation in amplitude modulated reactive dusty plasmas International conference

    K. Mori, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani and S. Inagaki

    Workshop on Plasma surface interaction for technological applications  2016.7 

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    Event date: 2016.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:University of Kiel   Country:Germany  

  • Effects of hydrogen content on a-C:H films deposited by Ar+H2+C7H8 plasma CVD International conference

    K. Yamaki, K. Koga, D. Yamashita, H. Seo, N. Itagaki and M. Shiratani

    Workshop on Plasma surface interaction for technological applications  2016.7 

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    Event date: 2016.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:University of Kiel   Country:Germany  

  • Effects of clusters transport on hydrogenated amorphous silicon solar cells International conference

    T. Kojima, S. Toko, K. Keya, K. Tanaka, H. Seo, N. Itagaki, K. Koga, and M. Shiratani

    Workshop on Plasma surface interaction for technological applications  2016.7 

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    Event date: 2016.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:University of Kiel   Country:Germany  

  • コンパクトドリフトチューブへのダスト入射角度に対する印加バイアス電圧の影響

    片山龍, 方韜鈞, 古閑一憲, 山下大輔, 徐鉉雄, 板垣奈穂, 白谷正治, 増崎貴, 芦川直子, 時谷政行, 西村清彦, 相良明男

    第11回核融合エネルギー連合講演会  2016.7 

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    Event date: 2016.7

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • コンパクトドリフトチューブを用いたArプラズマとグラファイト壁の相互作用により発生したダストの捕集実験

    方韜鈞, 片山龍, 古閑一憲, 山下大輔, 徐鉉雄, 板垣奈穂, 白谷正治, 増崎貴, 芦川直子, 時谷政行, 西村清彦, 相良明男

    第11回核融合エネルギー連合講演会  2016.7 

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    Event date: 2016.7

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • Effects of hydrogen content on mass density of a-C:H films deposited using Ar + H2+ C7H8 Plasma CVD International conference

    K. Yamaki. X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, and M. Shiratani

    23rd Europhysics Conference on Atomic and Molecular Physics of Ionized Gases (ESCAMPIG)  2016.7 

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    Event date: 2016.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Bratislava   Country:Other  

  • Modulation level dependence of fluctuation of interactions between plasmas and nanoparticles grown in amplitude modulated discharges International conference

    K. Mori, M. Soejima, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    23rd Europhysics Conference on Atomic and Molecular Physics of Ionized Gases (ESCAMPIG)  2016.7 

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    Event date: 2016.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Bratislava   Country:Other  

  • Effects of discharge power on transport characteristics of clusters in the downstream region of multi-hollow SiH4 discharges International conference

    T. Kojima, S. Toko, K. Keya, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    23rd Europhysics Conference on Atomic and Molecular Physics of Ionized Gases (ESCAMPIG)  2016.7 

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    Event date: 2016.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Bratislava   Country:Other  

  • プラズマを用いた低温高速層交換結晶成長に対するRF電力の効果

    田浪荘汰, 大井手芳徳, 坂本大輔, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    平成28年度九州表面・真空研究会2016(兼第21回九州薄膜表面研究会)  2016.6 

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    Event date: 2016.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • 不純物添加法を用いた高移動度アモルファスIn2O3:Sn膜の作製

    高崎俊行, 松島宏一, 山下大輔, 徐鉉雄, 古閑一憲, 白谷正治, 板垣奈穂

    平成28年度九州表面・真空研究会2016(兼第21回九州薄膜表面研究会)  2016.6 

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    Event date: 2016.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • DC biased parallel plates for reduction of dust accumulation on first mirror International conference

    M. Shiratani, R. Katayama, K. Koga, D. Yamashita, H. Seo, N. Itagaki, S. Masuzaki, N. Ashikawa, M. Tokitani, K. Nishimura, A. Sagara

    International Conference on Plasma Surface Interactions in Controlled Fusion Devices (22nd PSI)  2016.5 

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    Event date: 2016.5 - 2016.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Pontifical Urbaniana University, Roma   Country:Italy  

  • Fluctuation of position and energy of a fine particle in plasma nanofabrication (Invited) Invited International conference

    M. Shiratani, K. Koga

    Intl’ Conf. on Processing & Manufacturing of Advanced Materials (THERMEC’2016)  2016.5 

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    Event date: 2016.5 - 2016.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Graz   Country:Austria  

  • Plasma induced multigeneration effects on plant growth and crop yield (Invited) Invited International conference

    M. Shiratani, T. Sarinont, K. Koga, N. Hayashi

    1st International Workshop on Plasma Agriculture (IWOPA)  2016.5 

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    Event date: 2016.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:A.J. Drexel Plasma Institute, Philadelphia   Country:Other  

  • R&D status of agricultural applications of high voltage and plasma in Japan (Invited) Invited International conference

    M. Shiratani, T. Sarinont, K. Koga, N. Hayashi

    Workshop on Application of Advanced Plasma Technologies in CE Agriculture  2016.4 

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    Event date: 2016.4

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ljubljana   Country:Slovenia  

  • コンパクトドリフトチューブを用いたプラズマ生成ダスト捕集

    白谷正治, 片山龍, 古閑⼀憲, 山下大輔, 徐鉉雄, 板垣奈穂, 増崎貴, 芦川直子, 時谷政行, 西村清彦, 相良明男, LHD実験グループ

    第63回応用物理学会春季学術講演会  2016.3 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  • ヘリコンプラズマを⽤いたCO2のメタン化におけるCH4収率と⽣成速度のCO2ガス流量依存性

    都甲将, 古閑⼀憲, 白谷正治

    第63回応用物理学会春季学術講演会  2016.3 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  • RFマグネトロンスパッタリング法で作製した(ZnO)x(InN)1-x膜の表⾯モフォロジー制御

    松島宏⼀, 井手智章, 山下大輔, 徐鉉雄, 古閑⼀憲, 白谷正治, 板垣奈穂

    第63回応用物理学会春季学術講演会  2016.3 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  • 宇宙科学・⼯学とプラズマ (招待講演) Invited

    白谷正治, 古閑⼀憲

    第63回応用物理学会春季学術講演会  2016.3 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  • プラズマによるクラスター捕捉を利用した低クラスター混入 a-Si:H 薄膜の作製

    都甲将, 毛屋公孝, 小島尚, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    第7回薄膜太陽電池セミナー  2016.3 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:山形大学   Country:Japan  

  • 色素及び量子ドット増感太陽電池の電解液に適用可能なポリマー触媒

    徐鉉雄, 田浪荘汰, 大井手芳徳, 板垣奈穂, 古閑一憲, 白谷正治

    第7回薄膜太陽電池セミナー  2016.3 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:山形大学   Country:Japan  

  • A compact drift tube: a novel in-situ dust measurement method International conference

    M. Shiratani, R. Katayama, K. Koga, D. Yamashita, H. Seo, N. Itagaki, S. Masuzaki, N. Ashikawa, M. Tokitani, K. Nishimura, A. Sagara, and the LHD Experimental Group

    8th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 9th International Conference on Plasma Nanotechnology and Science (ISPlasma2016/IC-PLANTS2016)  2016.3 

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    Event date: 2016.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya University   Country:Japan  

  • Non-thermal atmospheric air plasma irradiation to plant seeds for plasma agricultural applications International conference

    M. Soejima, K. Koga, T. Sarinont, T. Amano, H. Seo, N. Itagaki, M. Shirtani

    5th International Conference on Advanced Plasma Technologies (ICAPT-5)  2016.3 

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    Event date: 2016.2 - 2016.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Rogla   Country:Slovenia  

  • Fluctuation in interaction potential between binary colliding fine particles suspended in plasmas International conference

    M. Soejima, T. Ito, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    5th International Conference on Advanced Plasma Technologies (ICAPT-5)  2016.3 

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    Event date: 2016.2 - 2016.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Rogla   Country:Slovenia  

  • Deposition of high-mobility amorphous In2O3:Sn films by utilizing nitrogen mediated amorphization method International conference

    T. Takasaki, T. Ide, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    The 3rd Korea-Japan Joint Symposium on Advanced Solar Cells  2016.2 

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    Event date: 2016.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Welli Hilli Park, Kangwon Province   Country:Korea, Republic of  

  • Inverse Correlation between Radical Deposition Rate and Cluster Amount in Gas Phase in SiH4 Discharge Plasmas for Si Thin Film Solar Cell Fabrication International conference

    S. Toko, Y. Torigoe, K. Keya, T. Kojima, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    The 3rd Korea-Japan Joint Symposium on Advanced Solar Cells  2016.2 

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    Event date: 2016.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Welli Hilli Park, Kangwon Province   Country:Korea, Republic of  

  • Hybrid counter electrode of photochemical solar cells for iodine and polysulfide redox systems (Invited) Invited International conference

    H. Seo, N. Itagaki, K. Koga, M. Shiratani

    The 3rd Korea-Japan Joint Symposium on Advanced Solar Cells  2016.2 

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    Event date: 2016.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Welli Hilli Park, Kangwon Province   Country:Korea, Republic of  

  • Evaluation of SiH and SiH2 bonds in PIN a-Si:H solar cells using Raman spectroscopy International conference

    K. Keya, Y. Torigoe, S. Toko, T. Kojima, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    The 3rd Korea-Japan Joint Symposium on Advanced Solar Cells  2016.2 

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    Event date: 2016.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Welli Hilli Park, Kangwon Province   Country:Korea, Republic of  

  • Effects of annealing temperature on grain size of Au catalyst for layer-exchange Ge crystalline formation International conference

    S. Tanami, S. Hashimoto, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    The 3rd Korea-Japan Joint Symposium on Advanced Solar Cells  2016.2 

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    Event date: 2016.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Welli Hilli Park, Kangwon Province   Country:Korea, Republic of  

  • Stable and low cost polymeric catalyst for dye-sensitized solar cells International conference

    H. Seo, M.-K. Son, N. Itagaki, K. Koga, M. Shiratani

    EMN Photovoltaics Meeting  2016.1 

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    Event date: 2016.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Eaton Hotel, Hong Kong   Country:China  

  • シランマルチホロー放電プラズマ下流領域におけるクラスタ量の時間変化

    小島尚, 都甲将, 鳥越祥宏, 毛屋公孝, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第19回支部大会  2015.12 

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    Event date: 2015.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本大学   Country:Japan  

  • 反応性プラズマ中で形成されたナノ粒子によるレーザー散乱光強度のエンベロープ解析:変調周波数依存性

    森研人, 伊東鉄平, 添島雅大, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治, 小林達哉, 稲垣滋

    プラズマ・核融合学会九州・沖縄・山口支部 第19回支部大会  2015.12 

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    Event date: 2015.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本大学   Country:Japan  

  • プラズマスパッタリングによる酸化シリコン中への埋め込みGeナノ粒子の粒径制御

    大井手芳徳, 橋本慎史, 田浪荘汰, 徐鉉雄, 内田儀一郎, 山下大輔, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第19回支部大会  2015.12 

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    Event date: 2015.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本大学   Country:Japan  

  • O2/N2分圧比制御による高品質(ZnO)x(InN)1-x膜のスパッタリング形成

    松村勇希, 松島宏一, 井手智章, 山下大輔, 徐鉉雄, 古閑一憲, 白谷正治, 板垣奈穂

    プラズマ・核融合学会九州・沖縄・山口支部 第19回支部大会  2015.12 

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    Event date: 2015.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本大学   Country:Japan  

  • Ar+H2+C7H8プラズマCVDで堆積したa-C:H膜へのイオン照射の効果

    山木健司, 董ショウ, 古閑一憲, 山下大輔, 徐鉉雄, 板垣奈穂, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第19回支部大会  2015.12 

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    Event date: 2015.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本大学   Country:Japan  

  • ダイバータシミュレータ内でのコンパクトドリフトチューブを用いたダスト捕集実験

    片山龍, 古閑一憲, 山下大輔, 徐鉉雄, 板垣奈穂, 白谷正治, 増崎貴, 芦川直子, 時谷政行, 西村清彦, 相良明男, LHD実験グループ

    プラズマ・核融合学会九州・沖縄・山口支部 第19回支部大会  2015.12 

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    Event date: 2015.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本大学   Country:Japan  

  • Analysis of Spatiotemporal Development of Interaction Fluctuation between Nanoparticles and Radicals in Reactive Plasmas International conference

    K. Koga, T. Ito, T. Kobayashi, M. Shiratani, S. Inagaki

    9th APSPT/28th SPSM  2015.12 

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    Event date: 2015.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagasaki University   Country:Japan  

  • Dependence of CO2 Conversion on Molar Ratio of H2/CO2 in Helicon Discharge Plasma International conference

    S. Toko, R. Katayama, K. Koga, M. Shiratani

    9th APSPT/28th SPSM  2015.12 

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    Event date: 2015.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagasaki University   Country:Japan  

  • Effects of Substrate Temperature on Film Growth Mode of ZnO-InN Pseudo Binary Alloys International conference

    K. Matsushima, T. Ide, D. Yamashita, K. Koga, M. Shiratani, N. Itagaki

    9th APSPT/28th SPSM  2015.12 

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    Event date: 2015.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagasaki University   Country:Japan  

  • DC biased compact drift tube for measuring dust transport

    R. Katayama, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, S. Masuzaki, N. Ashikawa, M. Tokitani, K. Nishimura, A. Sagara, and the LHD Experimental Group

    第16回微粒子プラズマ研究会  2015.12 

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    Event date: 2015.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:核融合科学研究所   Country:Japan  

  • Arプラズマ中の2つのダスト粒子間のポテンシャル

    白谷正治, 添島雅大, 伊東鉄平, 徐鉉雄, 板垣奈穂, 古閑一憲

    第25回日本MRS年次大会  2015.12 

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    Event date: 2015.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜市開港記念会館   Country:Japan  

  • CO2-H2ヘリコンプラズマにおけるCH4生成反応速度

    都甲将, 片山龍, 古閑一憲, 白谷正治

    第25回日本MRS年次大会  2015.12 

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    Event date: 2015.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜市開港記念会館   Country:Japan  

  • He/O2プラズマジェット照射による液中酸化反応に及ぼすプラズマ照射距離の効果

    中島厚, 内田儀一郎, 川崎敏之, 古閑一憲, 竹中弘祐, 白谷正治, 節原裕一

    第25回日本MRS年次大会  2015.12 

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    Event date: 2015.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜市開港記念会館   Country:Japan  

  • クラスタ及びSiH3ラジカルのSiH2結合形成への寄与

    毛屋公孝, 鳥越祥宏, 都甲将, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    第25回日本MRS年次大会  2015.12 

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    Event date: 2015.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜市開港記念会館   Country:Japan  

  • Photovoltaic Potentials of Nano-particles Based on Advanced Plasma Processes (Invited) Invited

    H. Seo, S. Hashimoto, S. Tanami, N. Itagaki, K. Koga, M. Shiratani

    第25回日本MRS年次大会  2015.12 

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    Event date: 2015.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:横浜市開港記念会館   Country:Japan  

  • Performance Enhancement of Si Quantum Dotsensitized Solar Cells Based on Improved Charge Transfer

    H. Seo, S. Hashimoto, S. Tanami, N. Itagaki, K. Koga, M. Shiratani

    第25回日本MRS年次大会  2015.12 

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    Event date: 2015.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:横浜市開港記念会館   Country:Japan  

  • 基板テクスチャ構造がa-Si:H薄膜中Si-H2結合形成に及ぼす影響

    毛屋公孝, 鳥越祥宏, 都甲将, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    第25回日本MRS年次大会  2015.12 

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    Event date: 2015.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜市開港記念会館   Country:Japan  

  • a-Si:H膜中のSi-H2結合生成に対する表面反応の寄与

    鳥越祥宏, 毛屋公孝, 都甲将, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    第25回日本MRS年次大会  2015.12 

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    Event date: 2015.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜市開港記念会館   Country:Japan  

  • プラズマジェットによりアガロース膜を移動した活性酸素の検出プラズマジェットによりアガロース膜を移動した活性酸素の検出

    佐藤晃弘, 久壽米木捷太, 工藤章裕, 坂之下朋大, 鶴丸拓也, 若林泰昂, 川崎敏之, 内田儀一郎, 古閑一憲, 白谷正治

    平成27年度応用物理学会九州支部学術講演会  2015.12 

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    Event date: 2015.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:琉球大学   Country:Japan  

  • Plasma Assisted Agriculture (Invited) Invited International conference

    M. Shiratani, T. Sarinont, T. Amano, N. Hayashi, K. Koga

    2015 MRS Fall Meeting  2015.12 

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    Event date: 2015.11 - 2015.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hynes Convention Center, Boston   Country:Other  

  • Deposition Kinetics of Metal Nanoparticles Produced by Discharges in Water International conference

    T. Amano, T. Sarinont, K. Koga, M. Hirata, A. Tanaka, M. Shiratani

    2015 MRS Fall Meeting  2015.12 

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    Event date: 2015.11 - 2015.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hynes Convention Center, Boston   Country:Other  

  • A Simple Method for Quantifying Dose of Reactive Species Generated by Atmospheric Pressure Plasmas International conference

    T. Amano, T. Sarinont, G. Uchida, T. Kawasaki, K. Koga, M. Shiratani

    2015 MRS Fall Meeting  2015.12 

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    Event date: 2015.11 - 2015.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hynes Convention Center, Boston   Country:Other  

  • Chemical Ordering in ZnO-InN Pseudo Binary Alloys with Tunable Bandgap International conference

    K. Matsushima, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    2015 MRS Fall Meeting  2015.12 

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    Event date: 2015.11 - 2015.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hynes Convention Center, Boston   Country:Other  

  • プラズマによる植物成長促進・食糧増産

    白谷正治, 古閑一憲, 林信哉

    第32回プラズマ・核融合学会 年会  2015.11 

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    Event date: 2015.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  • 核融合炉内ダスト計測用コンパクトドリフトチューブの試作

    片山龍, 古閑一憲, 山下大輔, 徐鉉雄, 板垣奈穂, 白谷正治, 芦川直子, 時谷政行, 増崎貴, 西村清彦, 相良明男, LHD実験グループ

    第32回プラズマ・核融合学会 年会  2015.11 

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    Event date: 2015.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  • Catalytic Activation in Polymeric Counter Electrode of Dye-sensitized Solar Cells by Surface Modification International conference

    H. Seo, M.-K. Son, S. Hashimoto, N. Itagaki, K. Koga, M. Shiratani

    25th International Photovoltaic Science and Engineering Conference (PVSEC-25)  2015.11 

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    Event date: 2015.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:BEXCO, Busan   Country:Korea, Republic of  

  • Enhancement on Photocatalytic and Photovoltaic Properties of Dye-sensitized Solar Cells by S doped TiO2 International conference

    H. Seo, S.-H. Nam, J.-H. Boo, N. Itagaki, K. Koga, M. Shiratani

    25th International Photovoltaic Science and Engineering Conference (PVSEC-25)  2015.11 

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    Event date: 2015.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:BEXCO, Busan   Country:Korea, Republic of  

  • Plasma assisted enhancement of agricultural yield (Invited) Invited International conference

    M. Shiratani and K. Koga

    25th International TOKI Conference (ITC-25)  2015.11 

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    Event date: 2015.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ceratopia Toki, Gifu   Country:Japan  

  • Deposition rate and etching rate due to neutral radicals and dust particles measured using QCMs together with a dust eliminating filter International conference

    R. Katayama, K. Koga, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, M. Tokitani, S. Masuzaki, K. Nishimura, A. Sagara, LHD Experimental Group

    ICRP9/GEC68/SPP33  2015.10 

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    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hawaii Convention Center   Country:Other  

  • Effects of Ambient Humidity on Plant Growth Enhancement by Atmospheric Air Plasma Irradiation to Plant Seeds International conference

    T. Sarinont, T. Amano, K. Koga, M. Shiratani

    ICRP9/GEC68/SPP33  2015.10 

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    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hawaii Convention Center   Country:Other  

  • Discharge characteristics and hydrodynamics behaviors of atmospheric plasma jets produced in various gas flow patterns International conference

    Y. Setsuhara, G. Uchida, A. Nakajima, K. Takenaka, K. Koga, M. Shiratani

    ICRP9/GEC68/SPP33  2015.10 

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    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hawaii Convention Center   Country:Other  

  • Gas flow rate dependence of the production of reactive oxygen species in liquid by a plasma-jet irradiation International conference

    G. Uchida, A. Nakajima, T. Kawasaki, K. Koga, K. Takenaka, M. Shiratani, Y. Setsuhara

    ICRP9/GEC68/SPP33  2015.10 

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    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hawaii Convention Center   Country:Other  

  • Substrate temperature dependence of Au-induced crystalline Ge film formation using sputtering deposition International conference

    S. Tanami, D. Ichida, D. Hashimoto, G. Uchida, H. Seo, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    ICRP9/GEC68/SPP33  2015.10 

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    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hawaii Convention Center   Country:Other  

  • Raman Spectroscopy of a -C:H Films Deposited Using Ar + H 2 + C 7 H 8 Plasma CVD International conference

    X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    ICRP9/GEC68/SPP33  2015.10 

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    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hawaii Convention Center   Country:Other  

  • Measurements of nitrogen atom density in N2/Ar sputtering plasma for fabrication of high-mobility amorphous In2O3:Sn films International conference

    T. Takasaki, T. Ide, K. Matsushima, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    ICRP9/GEC68/SPP33  2015.10 

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    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hawaii Convention Center   Country:Other  

  • Measurements of absolute densities of nitrogen and oxygen atoms in sputtering plasma for fabrication of ZnInON films International conference

    K. Matsushima, T. Ide, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    ICRP9/GEC68/SPP33  2015.10 

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    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hawaii Convention Center   Country:Other  

  • Measurement of absolute density of N atom in sputtering plasma for epitaxial growth ZnO films via nitrogen mediated crystallization International conference

    T. Ide, K. Matsushima, T. Takasaki, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    ICRP9/GEC68/SPP33  2015.10 

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    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hawaii Convention Center   Country:Other  

  • Cross correlation analysis of plasma perturbation in amplitude modulated reactive dusty plasmas International conference

    T. Ito, M. Soejima, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani, T. Kobayashi, S. Inagaki

    ICRP9/GEC68/SPP33  2015.10 

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    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hawaii Convention Center   Country:Other  

  • Cluster Incorporation into A-Si:H Films Deposited Using H 2 +SiH 4 Discharge Plasmas International conference

    S. Toko, Y. Torigoe, K. Keya, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    ICRP9/GEC68/SPP33  2015.10 

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    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hawaii Convention Center   Country:Other  

  • Attraction during binary collision of fine particles in Ar plasma International conference

    M. Soejima, T. Ito, D. Yamashita, N. Itagaki, H. Seo, K. Koga, M. Shiratani

    ICRP9/GEC68/SPP33  2015.10 

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    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hawaii Convention Center   Country:Other  

  • Synthesis of indium-containing nanoparticles using plasmas in water to study their effects on living body International conference

    T. Amano, K. Koga, T. Sarinont, H. Seo, N. Itagaki, M. Shiratani, S. Kitazaki, M. Hirata, Y. Nakatsu, A. Tanaka

    ICRP9/GEC68/SPP33  2015.10 

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    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hawaii Convention Center   Country:Other  

  • Raman spectroscopy of PIN hydrogenated amorphous silicon solar cells International conference

    K. Keya, Y. Torigoe, S. Toko, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    ICRP9/GEC68/SPP33  2015.10 

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    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hawaii Convention Center   Country:Other  

  • Laser trapped single fine particle as a probe of plasma parameters International conference

    D. Yamashita, M. Soejima, T. Ito, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    ICRP9/GEC68/SPP33  2015.10 

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    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hawaii Convention Center   Country:Other  

  • Effects of N2 dilution on fabrication of Ge nanoparticles by rf sputtering International conference

    S. Hashimoto, S. Tanami, H. Seo, G. Uchida, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    ICRP9/GEC68/SPP33  2015.10 

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    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hawaii Convention Center   Country:Other  

  • Effects of electrode structure on characteristics of multi-hollow discharges International conference

    Y. Torigoe, K. Keya, S. Toko, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    ICRP9/GEC68/SPP33  2015.10 

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    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hawaii Convention Center   Country:Other  

  • プラズマの直接照射及び照射溶液による突然変異の誘導

    中津可道, 大野みずき, 鷹野典子, 北崎訓, 古閑一憲, 天野孝昭, 白谷正治, 田中昭代, 續輝久

    第74回日本癌学会学術総会  2015.10 

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    Event date: 2015.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  • Novel polymer counter electrode of dye-sensitized solar cells International conference

    H. Seo, M.-K. Son, S. Hashimoto, N. Itagaki, K. Koga, M. Shiratani

    66th Annual Meeting of the International Society of Electrochemistry  2015.10 

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    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Taipei   Country:Taiwan, Province of China  

  • 非平衡プラズマジェットの動的放電特性

    内田儀一郎, 竹中弘祐, 節原裕一, 川崎敏之, 古閑一憲, 白谷正治

    第21回プラズマ新領域研究会『プラズマ流の可視化』  2015.10 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪大学   Country:Japan  

  • KI-デンプン水溶液を用いた大気圧プラズマの活性種照射量の簡便な評価法

    天野孝昭, Thapanut Sarinont, 内田儀一郎, 川崎敏之, 古閑一憲, 白谷正治

    平成27年度(第68回)電気・情報関係学会九州支部連合大会  2015.9 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡大学   Country:Japan  

  • 反応性プラズマ中ナノ粒子量揺らぎのクロスコリレーション解析

    伊東鉄平, 添島雅大, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治, 小林達哉, 稲垣滋

    平成27年度(第68回)電気・情報関係学会九州支部連合大会  2015.9 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡大学   Country:Japan  

  • 窒素添加結晶化法を用いたZnO膜作製におけるN2/Arプラズマ中のN原子絶対密度計測

    井手智章, 松島宏一, 高崎俊行, 竹田圭吾, 堀勝, 山下大輔, 徐鉉雄, 古閑一憲, 白谷正治, 板垣奈穂

    平成27年度(第68回)電気・情報関係学会九州支部連合大会  2015.9 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡大学   Country:Japan  

  • 成膜領域へのマルチホロー放電プラズマの拡散に対する電極構造の影響

    鳥越祥宏, 都甲将, 毛屋公孝, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    平成27年度(第68回)電気・情報関係学会九州支部連合大会  2015.9 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡大学   Country:Japan  

  • 水素前方散乱分析法とフーリエ変換赤外分光法によるアモルファス炭素膜中水素濃度の比較分析

    Xiao Dong, 古閑一憲, 山下大輔, 徐鉉雄, 板垣奈穂, 白谷正治

    平成27年度(第68回)電気・情報関係学会九州支部連合大会  2015.9 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡大学   Country:Japan  

  • 高移動度アモルファスIn2O3:Sn薄膜作製におけるN2/Arスパッタリングプラズマ中の窒素原子絶対密度計測

    高崎俊行, 井手智章, 松島宏一, 竹田圭吾, 堀勝, 山下大輔, 徐鉉雄, 古閑一憲, 白谷正治, 板垣奈穂

    平成27年度(第68回)電気・情報関係学会九州支部連合大会  2015.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡大学   Country:Japan  

  • ラマン分光法を用いたa-Si:H PIN太陽電池のP、I層およびPI界面の評価

    毛屋公孝, 鳥越祥宏, 都甲将, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    平成27年度(第68回)電気・情報関係学会九州支部連合大会  2015.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡大学   Country:Japan  

  • マルチホロー放電プラズマCVD法におけるシランガス流速のクラスターに対するラジカル損失への影響

    都甲将, 鳥越祥宏, 毛屋公孝, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    平成27年度(第68回)電気・情報関係学会九州支部連合大会  2015.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡大学   Country:Japan  

  • プラズマ中微粒子運動の2次元顕微解析

    添島雅大, 伊東鉄平, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治, 野口将之, 内田誠一

    平成27年度(第68回)電気・情報関係学会九州支部連合大会  2015.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡大学   Country:Japan  

  • プラズマを用いた低温高速層交換結晶成長に対する金触媒膜厚の効果

    田浪荘汰, 橋本慎史, 内田儀一郎, 徐鉉雄, 山下大輔, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    平成27年度(第68回)電気・情報関係学会九州支部連合大会  2015.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡大学   Country:Japan  

  • プラズマ・壁相互作用により発生したダスト堆積とプラズマ発光との相関

    片山龍, 古閑一憲, 山下大輔, Hyunwoong Seo, 板垣奈穂, 白谷正治, 芦川直子, 時谷政行, 増崎貴, 西村清彦, 相良明男, LHD実験グループ

    平成27年度(第68回)電気・情報関係学会九州支部連合大会  2015.9 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡大学   Country:Japan  

  • ZnInON膜作製時におけるAr/O2/N2プラズマ中のO原子及びN原子の絶対密度計測

    松島宏一, 井手智章, 高崎俊行, 竹田圭吾, 堀勝, 山下大輔, 徐鉉雄, 古閑一憲, 白谷正治, 板垣奈穂

    平成27年度(第68回)電気・情報関係学会九州支部連合大会  2015.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡大学   Country:Japan  

  • RFスパッタリングによるGeナノ粒子作製への窒素希釈の効果

    橋本慎史, 田浪荘汰, 徐鉉雄, 内田儀一郎, 山下大輔, 板垣奈穂, 古閑一憲, 白谷正治

    平成27年度(第68回)電気・情報関係学会九州支部連合大会  2015.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡大学   Country:Japan  

  • Requirements Of Buffer Layer For Heteroepitaxy Of ZnO On Lattice-Mismatched Substrate By Sputtering International conference

    M. Shiratani, T. Ide, K. Matsushima, T. Takasaki, H. Seo, K. Koga, N. Itagaki

    The 10th Asian-European International Conference on Plasma Surface Engineering (AEPSE2015)  2015.9 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ramada Plaza Jeju Hotel   Country:Korea, Republic of  

  • Gas Flow Rate Ratio Dependence Of Properties Of Carbon Films Deposited Using Ar + H2+ C7H8 Plasma CVD International conference

    X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani

    The 10th Asian-European International Conference on Plasma Surface Engineering (AEPSE2015)  2015.9 

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    Event date: 2015.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ramada Plaza Jeju Hotel   Country:Korea, Republic of  

  • Performance Enhancement Of Organic/inorganic Hybrid Solar Cell By The Surface Modification At Si And Polymer Junction International conference

    H. Seo, S. Hashimoto, S. Tanami, N. Itagaki, K. Koga, M. Shiratani

    The 10th Asian-European International Conference on Plasma Surface Engineering (AEPSE2015)  2015.9 

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    Event date: 2015.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ramada Plaza Jeju Hotel   Country:Korea, Republic of  

  • Catalytic Enhancement On Polymeric Counter Electrode Of Si Quantum Dot-sensitized Solar Cells International conference

    H. Seo, S. Hashimoto, S. Tanami, N. Itagaki, K. Koga, M. Shiratani

    The 10th Asian-European International Conference on Plasma Surface Engineering (AEPSE2015)  2015.9 

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    Event date: 2015.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ramada Plaza Jeju Hotel   Country:Korea, Republic of  

  • Sputter Deposition Of Amorphous In2O3:Sn Films With High Mobility By Utilizing Nitrogen Mediated Amorphization Method International conference

    T. Takasaki, T. Ide, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    The 10th Asian-European International Conference on Plasma Surface Engineering (AEPSE2015)  2015.9 

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    Event date: 2015.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ramada Plaza Jeju Hotel   Country:Korea, Republic of  

  • Hydrogen Concentration In Extremely Thin A-Si:H Fimls Deposited By Multi-Hollow Discharge Plasma CVD Method International conference

    Y. Torigoe, S. Toko, K. Keya, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    The 10th Asian-European International Conference on Plasma Surface Engineering (AEPSE2015)  2015.9 

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    Event date: 2015.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ramada Plaza Jeju Hotel   Country:Korea, Republic of  

  • Fabrication Of Ge Nanoparticle Composite Films By Reactive Dusty Plasma Process For Next Generation Energy Devices (Invited) Invited International conference

    G. Uchida, H. Seo, K. Koga, M. Shiratani

    The 10th Asian-European International Conference on Plasma Surface Engineering (AEPSE2015)  2015.9 

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    Event date: 2015.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ramada Plaza Jeju Hotel   Country:Korea, Republic of  

  • Discharge Characteristics Of A Helium Atmospheric Plasma Jet Impinging Onto The Liquid Surface International conference

    G. Uchida, A. Nakajima, K. Takenaka, Y. Setsuhara, K. Koga, M. Shiratani

    The 10th Asian-European International Conference on Plasma Surface Engineering (AEPSE2015)  2015.9 

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    Event date: 2015.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ramada Plaza Jeju Hotel   Country:Korea, Republic of  

  • Response Of Silkworm Larvae To Non-thermal Atmospheric Pressure Plasma Stimulation International conference

    T. Sarinont, K. Koga, T. Amano, M. Shiratani

    The 10th Asian-European International Conference on Plasma Surface Engineering (AEPSE2015)  2015.9 

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    Event date: 2015.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ramada Plaza Jeju Hotel   Country:Korea, Republic of  

  • NO2- Concentration In Seeds Irradiated By Atmospheric Dielectric Barrier Discharge Plasmas International conference

    T. Amano, T. Sarinont, K. Koga, M. Shiratani

    The 10th Asian-European International Conference on Plasma Surface Engineering (AEPSE2015)  2015.9 

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    Event date: 2015.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ramada Plaza Jeju Hotel   Country:Korea, Republic of  

  • 液面に入射するプラズマジェットの放電特性と動的挙動

    内田儀一郎, 中島厚, 竹中弘祐, 古閑一憲, 白谷正治, 節原裕一

    第76回応用物理学会秋季学術講演会  2015.9 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  • Effects of Cluster Eliminating Filter on Extremely Thin a-Si:H Films Deposited by SiH4 Multi-Hollow Discharges

    Y. Torigoe, S. Toko, K. Keya, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    第76回応用物理学会秋季学術講演会  2015.9 

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    Event date: 2015.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  • マルチホロー放電プラズマCVDにおける水素希釈のa-Si:H膜中クラスター混入量への影響

    都甲将, 鳥越祥宏, 毛屋公孝, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    第76回応用物理学会秋季学術講演会  2015.9 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  • 大気圧He/O2プラズマジェット照射による液中活性酸素種生成に及ぼすガス流パターンの効果

    中島厚, 内田儀一郎, 川崎敏之, 古閑一憲, Thapanut Sarinont, 天野孝昭, 竹中弘祐, 白谷正治, 節原裕一

    第76回応用物理学会秋季学術講演会  2015.9 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  • AM変調を用いた反応性プラズマ中のナノ粒子揺らぎの時空間解析

    森研人, 伊東鉄平, 古閑一憲, 添島雅大, 山下大輔, 徐鉉雄, 板垣奈穂, 白谷正治, 小林達哉, 稲垣滋

    第9回プラズマエレクトロニクスインキュベーションホール  2015.9 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:国立中央青少年交流の家, 静岡   Country:Japan  

  • 膜中クラスター体積分率の水素ガス流量依存性

    小島尚, 都甲将, 鳥越祥宏, 毛屋公孝, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    第9回プラズマエレクトロニクスインキュベーションホール  2015.9 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:国立中央青少年交流の家, 静岡   Country:Japan  

  • 窒素媒介結晶化のスパッタ法によるZnO膜のエピタキシャル成長の窒素流量の影響

    松村勇希, 井手智章, 松島宏一, 山下大輔, Hyunwoong Seo, 古閑一憲, 白谷正治, 板垣奈穂

    第9回プラズマエレクトロニクスインキュベーションホール  2015.9 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:国立中央青少年交流の家, 静岡   Country:Japan  

  • 水素原子源付プラズマCVD法によるカーボンフィルムの堆積速度および膜質の制御

    山木健司, 董ショウ, 古閑一憲, 山下大輔, 徐鉉雄, 板垣奈穂, 白谷正治, 節原裕一, 竹中弘祐

    第9回プラズマエレクトロニクスインキュベーションホール  2015.9 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:国立中央青少年交流の家, 静岡   Country:Japan  

  • RFスパッタリング法を用いて作製したGeナノ粒子膜の増感型量子ドット太陽電池への応用

    大井手芳徳, 橋本慎史, 徐鉉雄, 内田儀一郎, 山下大輔, 板垣奈穂, 古閑一憲, 白谷正治

    第9回プラズマエレクトロニクスインキュベーションホール  2015.9 

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    Event date: 2015.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:国立中央青少年交流の家, 静岡   Country:Japan  

  • 体内動態観察を目的とした水中プラズマによるインジウムナノ粒子の作製と投与

    天野孝昭, 古閑一憲, 板垣奈穂, 白谷正治, 田中昭代, 平田美由紀

    新学術領域研究「プラズマ医療科学の創成」+「プラズマとナノ界面の相互作用に関する学術基盤の創成」+「統合的神経機能の制御を標的とした糖鎖の作動原理解明」合同公開シンポジウム  2015.8 

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    Event date: 2015.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学ESホール   Country:Japan  

  • Bispectrum analysis of fluctuation of nanoparticle amount in amplitude modulated capacitively-coupled discharge plasmas International conference

    M. Shiratani, T. Ito, K. Koga, M. Soejima, D. Yamashita, H. Seo, N. Itagaki, T. Kobayashi, S. Inagaki

    The XXXII edition of the International Conference on Phenomena in Ionized Gases (ICPIG2015)  2015.7 

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    Event date: 2015.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Iasi   Country:Romania  

  • Linear and Nonlinear Correlation between Deposition Rate and SiH Emission Intensity in SiH4 Multi-hollow Discharge Plasmas International conference

    S. Toko, Y. Torigoe, K. Keya, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    The XXXII edition of the International Conference on Phenomena in Ionized Gases (ICPIG2015)  2015.7 

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    Event date: 2015.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Iasi   Country:Romania  

  • Contribution of Clusters to SiH2 Bonds in a-Si:H Films International conference

    S. Toko, Y. Torigoe, K. Keya, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    The XXXII edition of the International Conference on Phenomena in Ionized Gases (ICPIG2015)  2015.7 

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    Event date: 2015.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Iasi   Country:Romania  

  • Position fluctuation of a fine particle optically trapped in Ar plasma International conference

    M. Shiratani, M. Soejima, T. Ito, D. Yamashita, N. Itagaki, H. Seo, K. Koga

    The XXXII edition of the International Conference on Phenomena in Ionized Gases (ICPIG2015)  2015.7 

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    Event date: 2015.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Iasi   Country:Romania  

  • Third Generation Photovoltaics (Invited) Invited International conference

    M. Shiratani, K. Koga, H. Seo, N. Itagaki

    The 1st Asian Workshop on Advanced Plasma Technology and Application  2015.7 

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    Event date: 2015.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ming Chi University of Technology   Country:Taiwan, Province of China  

  • Improvement of Agricultural Productivity utilizing Plasmas International conference

    M. Shiratani, T. Sarinont, T. Amano, K. Koga, N. Hayashi

    2015 International Forum on Functional Materials (IFFM2015)  2015.6 

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    Event date: 2015.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ramada Plaza Jeju Hotel   Country:Korea, Republic of  

  • Second and Third Generation Photovoltaics (Invited) Invited International conference

    M. Shiratani, K. Koga, H. Seo, N. Itagaki

    2015 International Forum on Functional Materials (IFFM2015)  2015.6 

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    Event date: 2015.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ramada Plaza Jeju Hotel   Country:Korea, Republic of  

  • Sputtering growth of single-crystalline ZnO films on c-sapphire substrates by using impurity-mediated crystallization method: Effects of surface morphology of buffer layers International conference

    N. Itagaki, T. Ide, K. Matsushima, T. Takasaki, D. Yamashita, H. Seo, K. Koga, Masaharu Shiratani

    2015 E-MRS Spring Meeting and Exhibit  2015.5 

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    Event date: 2015.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Congress Center (Grand Palais), Lille   Country:France  

  • クラスタ除去によるa-Si太陽電池の光劣化抑制(招待講演) Invited

    白谷正治, 都甲将, 鳥越祥宏, 毛屋公孝, 古閑一憲

    電子情報通信学会有機エレクトロニクス研究会  2015.4 

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    Event date: 2015.4

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大濱信泉記念館多目的ホール, 沖縄   Country:Japan  

  • Site-selective Coating of Carbon Protective Layer on Sub-micron Trenches Using Plasma CVD International conference

    M. Shiratani, X. Dong, K. Koga, N. Itagaki, H. Seo, G. Uchida

    42nd International Conference on Metallurgical Coatings and Thin Films (ICMCTF 2015)  2015.4 

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    Event date: 2015.4

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Town & Country Resort Hotel, San Diego   Country:Other  

  • Crystalline Ge film deposition between Au catalyst film and quartz glass substrate using magnetron sputtering International conference

    M. Shiratani, D. Ichida, H. Seo, N. Itagaki, K. Koga

    2015 MRS Spring Meeting  2015.4 

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    Event date: 2015.4

    Language:English   Presentation type:Oral presentation (general)  

    Venue:San Francisco, California   Country:Other  

  • Enhancement on the Photovoltaic Properties of Dye-Sensitized Solar Cells with Catalytically Activated Polymeric Counter Electrode International conference

    H. Seo, S. Hashimoto, N. Itagaki, K. Koga, M. Shiratani

    2015 MRS Spring Meeting  2015.4 

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    Event date: 2015.4

    Language:English   Presentation type:Oral presentation (general)  

    Venue:San Francisco, California   Country:Other  

  • High-mobility amorphous In2O3:Sn films prepared by sputter deposition with nitrogen-mediated amorphization method International conference

    N. Itagaki, T. Takasaki, T. Nakanishi, D. Yamashita, H. Seo, K. Koga, M. Shiratani

    7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterial/8th International Conference on Plasma Nanotechnology and Science (ISPlasma2015/IC-PLANTS2015)  2015.3 

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    Event date: 2015.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya University   Country:Japan  

  • Fabrication of ZnInON-based multi-quantum well solar cells by RF magnetron sputtering International conference

    K. Matsushima, R. Shimizu, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterial/8th International Conference on Plasma Nanotechnology and Science (ISPlasma2015/IC-PLANTS2015)  2015.3 

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    Event date: 2015.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya University   Country:Japan  

  • Effects of ion irradiation on mass density of carbon films deposited by Hassisted plasma CVD International conference

    X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani

    7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterial/8th International Conference on Plasma Nanotechnology and Science (ISPlasma2015/IC-PLANTS2015)  2015.3 

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    Event date: 2015.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya University   Country:Japan  

  • Effects of Gas Flow Rate on Deposition Rate and Amount of Si Clusters Incorporated into a-Si:H Films International conference

    S. Toko, Y. Torigoe, K. Keya, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterial/8th International Conference on Plasma Nanotechnology and Science (ISPlasma2015/IC-PLANTS2015)  2015.3 

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    Event date: 2015.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya University   Country:Japan  

  • プラズマによるナノ粒子の合成と凝集・輸送制御(招待講演) Invited

    白谷正治, 古閑一憲

    第62回応用物理学会春季学術講演会  2015.3 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  • 窒素添加結晶化法によるc面サファイア基板上へのZnO膜の作製:歪み緩和におけるバッファー層結晶粒密度の影響

    井手智章, 松島宏一, 清水僚太, 山下大輔, 徐鉉雄, 古閑一憲, 白谷正治, 板垣奈穂

    第62回応用物理学会春季学術講演会  2015.3 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  • ワイドバンドギャップ半導体ZnInONをi層に用いたpin太陽電池の作製

    松島宏一, 清水僚太, 井手智章, 山下大輔, 徐鉉雄, 古閑一憲, 白谷正治, 板垣奈穂

    第62回応用物理学会春季学術講演会  2015.3 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  • 可視領域でバンドギャップチューニング可能なZnO系新材料の開発(招待講演) Invited

    板垣奈穂, 松島宏一, 井手智章, 山下大輔, 徐鉉雄, 古閑一憲, 白谷正治

    第62回応用物理学会春季学術講演会  2015.3 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  • Effects of atmospheric pressure DBD plasma irradiation on growth of silkworms International conference

    T. Amano, T. Sarinont, K. Koga, M. Shiratni

    The 20th Workshop on Advanced Plasma Processes and Diagnostics & The 7th Workshop for NU-SKKU Joint Institute for Plasma-Nano Materials  2015.1 

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    Event date: 2015.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hokkaido University   Country:Japan  

  • Photovoltaic application of Si nano-particles fabricated by underwater discharge (Invited) Invited International conference

    H. Seo, S. Hashimoto, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    The 20th Workshop on Advanced Plasma Processes and Diagnostics & The 7th Workshop for NU-SKKU Joint Institute for Plasma-Nano Materials  2015.1 

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    Event date: 2015.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hokkaido University   Country:Japan  

  • Realization of highly stable a‐Si:H film by using cluster eliminating filter International conference

    Y. Torigoe, S. Toko, K. Keya, D. Yamashita, H. Seo, N. Itagaki, K. Koga and M. Shiratani

    The 75th IUVSTA Workshop on Sheath Phenomena in Plasma Processing of Advanced Materials  2015.1 

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    Event date: 2015.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hotel Raj, Cerkljena Gorenjskem   Country:Slovenia  

  • Effects of hydrogen dilution on stability of a-Si:H films in silane hydrogen mixture multi-hollow discharge plasmas International conference

    Y. Torigoe, S. Toko, K. Keya, D. Yamashita, H. Seo, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani

    2015 Japan-Korea Joint Symposium on Advanced Solar Cells  2015.1 

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    Event date: 2015.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:TKP HAKATAEKIMAE Meeting Room, Fukuoka   Country:Japan  

  • Gas Residence Time Effects of Cluster Incorporation into a-Si:H Films International conference

    S. Toko, Y. Torigoe, K. Keya, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    2015 Japan-Korea Joint Symposium on Advanced Solar Cells  2015.1 

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    Event date: 2015.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:TKP HAKATAEKIMAE Meeting Room, Fukuoka   Country:Japan  

  • Fabrication of strained-induced ZnInON-based multi-quantum well solar cells by RF magnetron sputtering International conference

    K. Matsushima, R. Shimizu, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    2015 Japan-Korea Joint Symposium on Advanced Solar Cells  2015.1 

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    Event date: 2015.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:TKP HAKATAEKIMAE Meeting Room, Fukuoka   Country:Japan  

  • Fabrication of Si nanoparticles using plasmas in liquid for solar cell applications International conference

    S. Hashimoto, D. Ichida, H. Seo, G. Uchida, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    2015 Japan-Korea Joint Symposium on Advanced Solar Cells  2015.1 

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    Event date: 2015.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:TKP HAKATAEKIMAE Meeting Room, Fukuoka   Country:Japan  

  • カイコの成長に対する非平衡大気プラズマ照射の効果

    サリノントタパナット, 天野孝昭, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第18回支部大会  2014.12 

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    Event date: 2014.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • マルチホロー放電プラズマCVD法で作製したナノ結晶シリコン薄膜を用いた光学バンドギャップ制御

    金光善徳, 古閑一憲, 山下大輔, 鎌滝普礼, 徐鉉雄, 板垣奈穂, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第18回支部大会  2014.12 

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    Event date: 2014.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • プラズマ・壁相互作用により発生したダストの容器壁堆積のその場検出

    立石瑞樹, 片山龍, 古閑一憲, 山下大輔, 鎌滝晋礼, 徐鉉雄, 板垣奈穂, 白谷正治, 芦川直子, 時谷政行 増崎貴, 西村清彦, 相良明男, LHD実験グループ

    プラズマ・核融合学会九州・沖縄・山口支部 第18回支部大会  2014.12 

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    Event date: 2014.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • シランマルチホロー放電の発光強度の圧力依存性

    鳥越祥宏, 都甲将, 毛屋公孝, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第18回支部大会  2014.12 

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    Event date: 2014.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • RFマグネトロンスパッタリングと金薄膜触媒を用いた低温高速層交換Ge結晶成長

    市田大樹, 橋本慎史, 内田儀一郎, 徐鉉雄, 山下大輔, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第18回支部大会  2014.12 

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    Event date: 2014.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • LHD内バイアス基板への長期ダスト堆積実験

    片山龍, 立石瑞樹, 古閑一憲, 山下大輔, 鎌滝晋礼, 徐鉉雄, 板垣奈穂, 白谷正治, 芦川直子, 時谷政行, 増崎貴, 西村清彦 相良明男, LHD実験グループ

    プラズマ・核融合学会九州・沖縄・山口支部 第18回支部大会  2014.12 

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    Event date: 2014.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • プラズマCVDで作製されたa-Si:H膜中Si-H2結合形成に対するクラスター混入と表面反応の寄与

    都甲将, 鳥越祥宏, 毛屋公孝, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会九州・沖縄・山口支部 第18回支部大会  2014.12 

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    Event date: 2014.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • プラズマ照射植物種子の酸化ストレスの計測

    天野孝昭, サリノントタパナット, 古閑一憲, 白谷正治, 林信哉

    プラズマ・核融合学会九州・沖縄・山口支部 第18回支部大会  2014.12 

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    Event date: 2014.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • プラズマナノプロセシングにおける揺らぎ抑制のための戦略

    白谷正治, 古閑一憲, 徐鉉雄, 板垣奈穂

    第24回日本MRS年次大会  2014.12 

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    Event date: 2014.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜市開港記念会館   Country:Japan  

  • マルチホロー放電プラズマCVD法で堆積したSiナノ粒子含有膜の光学バンドギャップ制御

    金光善徳, 内田儀一郎, 市田大樹, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    第24回日本MRS年次大会  2014.12 

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    Event date: 2014.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜市開港記念会館   Country:Japan  

  • Free Radical Formation by Atmospheric Pressure Plasmas for Different Gas Species

    T. Sarinont, T. Amano, K. Koga, M. Shiratani, P. Attri

    第24回日本MRS年次大会  2014.12 

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    Event date: 2014.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:横浜市開港記念会館   Country:Japan  

  • イオン液体を用いたRFスパッタリング法により作製した銀ナノ粒子サイズの圧力依存性

    天野孝昭, サリノント タパナット, 古閑一憲, 白谷正治

    第24回日本MRS年次大会  2014.12 

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    Event date: 2014.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜市開港記念会館   Country:Japan  

  • Synthesis of indium-containing nanoparticle using plasmas in liquid for evaluating their kinetics in living body

    天野孝昭, サリノント タパナット, 古閑一憲, 平田美由紀, 田中昭代, 白谷正治

    平成26年度応用物理学会九州支部学術講演会  2014.12 

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    Event date: 2014.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:大分大学   Country:Japan  

  • 窒素添加スパッタリング法による高移動度アモルファスIn2O3:Sn 膜の作製

    高崎俊行, 中西貴彦, 山下大輔, 徐鉱雄, 古閑一憲, 白谷正治, 板垣奈穂

    平成26年度応用物理学会九州支部学術講演会  2014.12 

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    Event date: 2014.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大分大学   Country:Japan  

  • マルチホロー放電の上流領域に輸送された クラスタ量の水素希釈の効果

    毛屋公孝, 鳥越祥宏, 都甲将, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    平成26年度応用物理学会九州支部学術講演会  2014.12 

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    Event date: 2014.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大分大学   Country:Japan  

  • プラズマ中に光捕捉した微粒子の挙動解析

    添島雅大, 伊東鉄平, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    平成26年度応用物理学会九州支部学術講演会  2014.12 

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    Event date: 2014.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大分大学   Country:Japan  

  • Evaluaion of Si-H2 bond formation of a-Si:H film using cluster eliminating filter

    鳥越祥宏, 都甲将, 毛屋公孝, 山下大輔, 徐鉉雄, 板垣奈穂, 鎌滝晋礼, 古閑一憲, 白谷正治

    平成26年度応用物理学会九州支部学術講演会  2014.12 

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    Event date: 2014.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:大分大学   Country:Japan  

  • Contributions of ion irradiation to the characteristics of a-C:H films deposited by H-assisted plasma CVD method

    董ショウ, 古閑一憲, 山下大輔, 徐鉉雄, 板垣奈穂, 白谷正治

    平成26年度応用物理学会九州支部学術講演会  2014.12 

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    Event date: 2014.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:大分大学   Country:Japan  

  • Sputtering Growth of Pseudobinary ZnO-InN Alloys with Tunable Band Gap for Application in Multi-Quantum Well Solar Cells International conference

    N. Itagaki, K. Matsushima, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani

    2014 MRS Fall Meeting  2014.12 

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    Event date: 2014.11 - 2014.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hynes Convention Center, Boston   Country:Other  

  • Morphology Control of Buffer Layers for Growth of Single-Crystalline ZnO Films on Lattice Mismatched Substrates International conference

    T. Ide, K. Matsushima, R. Shimizu, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    2014 MRS Fall Meeting  2014.12 

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    Event date: 2014.11 - 2014.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hynes Convention Center, Boston   Country:Other  

  • Fabrication of Strained Multi-Quantum Well Solar Cells Utilizing ZnInON International conference

    K. Matsushima, R. Shimizu, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    2014 MRS Fall Meeting  2014.12 

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    Event date: 2014.11 - 2014.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hynes Convention Center, Boston   Country:Other  

  • Performance Dependence of Perovskite Solar Cells on the Ratio of Lead Iodide and Methylammonium Iodide International conference

    H. Seo, S. Hashimoto, D. Ichida, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    2014 MRS Fall Meeting  2014.12 

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    Event date: 2014.11 - 2014.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hynes Convention Center, Boston   Country:Other  

  • Effects of Atmospheric Air Plasma Irradiation to Plant Seeds on Chlorophyll and Carotenoids in Plant International conference

    T. Sarinont, T. Amano, K. Koga, M. Shiratani, N. Hayashi

    2014 MRS Fall Meeting  2014.12 

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    Event date: 2014.11 - 2014.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hynes Convention Center, Boston   Country:Other  

  • Multigeneration Study of Effects of Plasma Irradiation to Seeds of Arabidopsis Thaliana and Zinnia International conference

    M. Shiratani, T. Sarinont, T. Amano, K. Koga

    2014 MRS Fall Meeting  2014.12 

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    Event date: 2014.11 - 2014.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hynes Convention Center, Boston   Country:Other  

  • スパッタリング成膜法による高品質酸化亜鉛薄膜の形成

    板垣奈穂, 古閑一憲, 白谷正治

    第30回 九州・山口プラズマ研究会  2014.11 

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    Event date: 2014.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:ラグナガーデンホテル、沖縄   Country:Japan  

  • Synthesize of ZnO-based Semiconductor with Tunable Band Gap and Its Application in Multi-Quantum-Well Solar Cells International conference

    N. Itagaki, K. Matsushima, T. Ide, D. Yamashita, H. Seo, K. Koga, and M. Shiratani

    6th World Conferenceon Photovoltaic Energy Conversion  2014.11 

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    Event date: 2014.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto International Conference Center   Country:Japan  

  • Effects of Gas Residence Time on Amount of Si Clusters Incorporated into a-Si:H Films International conference

    S. Toko, Y. Torigoe, Y. Kanemitu, H. Seo, N. Itagaki, K. Koga and M. Shiratani

    6th World Conferenceon Photovoltaic Energy Conversion  2014.11 

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    Event date: 2014.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto International Conference Center   Country:Japan  

  • Optical Analysis on Perovskite Films According to CH3NH3I and PbI2 Concentration International conference

    H. Seo, S. Hashimoto, G. Uchida, N. Itagaki, K. Koga and M. Shiratani

    6th World Conferenceon Photovoltaic Energy Conversion  2014.11 

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    Event date: 2014.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto International Conference Center   Country:Japan  

  • Adverse Health Effects of Indium Tin Oxide and Copper Indium Gallium Diselenide International conference

    A. Tanaka, M. Hirata, K. Koga, M. Shiratani, M. Nakano, K. Omae and Y. Kiyohara

    6th World Conferenceon Photovoltaic Energy Conversion  2014.11 

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    Event date: 2014.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto International Conference Center   Country:Japan  

  • Non-Equilibrium and Extreme State -High-mobility amorphous In2O3:Sn films prepared via nitrogen-mediated amorphization- International conference

    N. Itagaki, T. Nakanishi, I. Suhariadi, D. Yamashita, H. Seo, K. Koga, M. Shiratani

    Plasma Conference 2014  2014.11 

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    Event date: 2014.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Toki Messe, Niigata   Country:Japan  

  • Fabrication of crystalline Ge films using RF sputtering and metal catalyst International conference

    D. Ichida, S. Hashimoto, G. Uchida, H. Seo, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Plasma Conference 2014  2014.11 

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    Event date: 2014.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Toki Messe, Niigata   Country:Japan  

  • In-situ mass measurement of dust particles generated due to interaction between H2 plasma and graphite wall International conference

    M. Tateishi, R. Katayama, K. Koga, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, the LHD Experimental Group

    Plasma Conference 2014  2014.11 

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    Event date: 2014.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Toki Messe, Niigata   Country:Japan  

  • Effects of dust deposition on optical characteristics of substrates International conference

    R. Katayama, M. Tateishi, K. Koga, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, the LHD Experimental Group

    Plasma Conference 2014  2014.11 

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    Event date: 2014.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Toki Messe, Niigata   Country:Japan  

  • Fabrication of Ge films for applying solar cells using RF magnetron sputtering and gold film catalyst International conference

    D. Ichida, S. Hashimoto, G. Uchida, H. Seo, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Global Photovoltaic Conference 2014  2014.11 

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    Event date: 2014.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:BEXCO Convention center, Busan   Country:Korea, Republic of  

  • Quantum characterization of Si nano-particles fabricated by multi-hollow discharge plasma chemical vapor deposition International conference

    H. Seo, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    Global Photovoltaic Conference 2014  2014.11 

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    Event date: 2014.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:BEXCO Convention center, Busan   Country:Korea, Republic of  

  • Improvement on charge transportation of Si quantum dot-sensitized solar cell using vanadium doped TiO2 International conference

    H. Seo, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, S. H. Nam, J. H. Boo

    Global Photovoltaic Conference 2014  2014.11 

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    Event date: 2014.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:BEXCO Convention center, Busan   Country:Korea, Republic of  

  • Fabrication of Si nanoparticles using plasmas in water for organic/inorganic hybrid solar cells International conference

    S. Hashimoto, D. Ichida, H. Seo, G. Uchida, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    Global Photovoltaic Conference 2014  2014.11 

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    Event date: 2014.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:BEXCO Convention center, Busan   Country:Korea, Republic of  

  • Novel method of Ge crystalline thin film deposition on SiO2 by sputtering International conference

    M. Shiratani, D. Ichida, H. Seo, N. Itagaki, K. Koga

    67th Annual Gaseous Electronics Conference  2014.11 

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    Event date: 2014.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Raleigh Convention Center, North Carolina   Country:Other  

  • Modulation frequency dependence of bispectrum of laser light scattering intensity from nanoparticles formed in reactive plasmas International conference

    T. Ito, D. Yamashita, H. Seo, K. KamatakiI, N. Itagaki, K. Koga, M. Shiratani

    67th Annual Gaseous Electronics Conference  2014.11 

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    Event date: 2014.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Raleigh Convention Center, North Carolina   Country:Other  

  • Cluster Incorporation Control by Hydrogen Silane Mixture in Multi Hollow Discharge Plasma CVD International conference

    S. Toko, Y. Torigoe, Y. Kanemitsu, H. Seo, K. Koga, M. Shiratani

    67th Annual Gaseous Electronics Conference  2014.11 

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    Event date: 2014.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Raleigh Convention Center, North Carolina   Country:Other  

  • Single Fine Particle Trapped in Ar Plasma by Optical Tweezers (Invited) Invited International conference

    M. Shiratani, T. Ito, M. Soejima, K. Koga, D. Yamashita, K. Kamataki, N. Itagaki

    15th Workshop on Fine Particle Plasmas  2014.10 

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    Event date: 2014.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:National Institute for Fusion Science, Toki   Country:Japan  

  • Development of an in-situ Detection Method of Dust Particles Deposited on Vessel Wall Using Quartz Crystal Microbalances International conference

    M. Tateishi, R. Katayama, K. Koga, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, LHD Experimental Group

    15th Workshop on Fine Particle Plasmas  2014.10 

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    Event date: 2014.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:National Institute for Fusion Science, Toki   Country:Japan  

  • Size-controlled Ge Nanoparticle Synthesis and Their Application to Quantum-dot Solar Cells International conference

    G. Uchida, D. Ichida, H. Seo, S. Hashimoto, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    15th Workshop on Fine Particle Plasmas  2014.10 

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    Event date: 2014.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:National Institute for Fusion Science, Toki   Country:Japan  

  • Effects of Dust Deposition on Optical Characteristics of Mirrors Installed on First Wall in LHD International conference

    R. Katayama, M. Tateishi, K. Koga, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, LHD Experimental Group

    15th Workshop on Fine Particle Plasmas  2014.10 

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    Event date: 2014.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:National Institute for Fusion Science, Toki   Country:Japan  

  • S i ナノ粒子を用いたハイブリッド型太陽電池の研究

    橋本慎史, 市田大樹, 徐鉉雄, 内田儀一郎, 山下大輔, 板垣奈穂, 古閑一憲, 白谷正治

    第6回薄膜太陽電池セミナー2014  2014.10 

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    Event date: 2014.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:広島大学   Country:Japan  

  • 色素増感太陽電池のポリマー触媒の改善

    徐鉉雄, 橋本慎史, 市田大樹, 板垣奈穂, 古閑一憲, 白谷正治

    第6回薄膜太陽電池セミナー2014  2014.10 

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    Event date: 2014.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:広島大学   Country:Japan  

  • マルチホロー放電プラズマで作製したa-Si:H膜中クラスター量の水素-シラン混合比依存性

    毛屋公孝, 都甲将, 鳥越祥宏, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    第6回薄膜太陽電池セミナー2014  2014.10 

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    Event date: 2014.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:広島大学   Country:Japan  

  • Nanopartilce Composite Plasma CVD Films and Some Applications (Invited) Invited International conference

    M. Shiratani, K. Koga

    2014 ECS and SMEQ Joint International Meeting  2014.10 

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    Event date: 2014.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Moon Palace Resort, Cancun   Country:Mexico  

  • Si量子ドットを用いたハイブリッド型太陽電池の研究

    橋本慎史, 市田大樹, 徐鉉雄, 内田儀一郎, 板垣奈穂, 古閑一憲, 白谷正治

    平成26年度(第67回)電気・情報関係学会九州支部連合大会  2014.9 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:鹿児島大学   Country:Japan  

  • マルチホロー放電プラズマCVDによるSi量子ドットの作製と新太陽電池への応用研究

    徐鉉雄, 橋本慎史, 板垣奈穂, 古閑一憲, 白谷正治

    平成26年度(第67回)電気・情報関係学会九州支部連合大会  2014.9 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:鹿児島大学   Country:Japan  

  • c面サファイア基板上への単結晶ZnO膜の形成 : 格子不整合系ヘテロエピタキシーにおける成長初期過程の表面形態の影響

    板垣奈穂, 井出智章, 松島宏一, 山下大輔, 徐鉉雄, 古閑一憲, 白谷正治

    第75回応用物理学会秋季学術講演会  2014.9 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  • Characteristics of cluster eliminating filter for plasma CVD

    Y. Torigoe, S. Toko, W. Chen, D. Yamashita, H. Seo, K. Kamataki, K. Koga, M. Shiratani

    第75回応用物理学会秋季学術講演会  2014.9 

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    Event date: 2014.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  • 酸窒化物半導体ZnInONを用いた量子井戸型太陽電池の作製

    松島宏一, 清水僚太, 井手智章, 山下大輔, 鎌滝晋礼, 徐鉉雄, 古閑一憲, 白谷正治, 板垣奈穂

    第75回応用物理学会秋季学術講演会  2014.9 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  • Influence of Atmospheric Air Discharge Plasma Irradiation on pH of Water

    T. Sarinont, T. Amano, K. Koga, M. Shiratani, H. Nobuya

    第75回応用物理学会秋季学術講演会  2014.9 

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    Event date: 2014.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  • Ar/NH3プラズマによるグラファイト外包磁気ナノ微粒子のアミノ基表面修飾の最適化

    張ハン, 楊恩波, 古閑一憲, 白谷正治, 永津雅章

    第75回応用物理学会秋季学術講演会  2014.9 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  • Plasma CVD nanostructured films for energy applications (Invited) Invited International conference

    M. Shiratani, H. Seo, N. Itagaki, G. Uchida, K. Koga

    12th Asia Pacific Conference on Plasma Science and Technology (APCPST) and 27th Symposium on Plasma Science for Materials (SPSM)  2014.9 

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    Event date: 2014.8 - 2014.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Adelaid   Country:Australia  

  • Fabrication of tandem dye-sensitized solar cell based on mesh-type of counter electrode International conference

    H. Seo, S. Hashimoto, D. Ichida, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    65th Annual Meeting of the International Society of Electrochemistry  2014.9 

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    Event date: 2014.8 - 2014.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ubiquitous Electrochemistry, Lausanne   Country:Switzerland  

  • Effects of hydrogen dilution to nanoparticle formation in silane hydrogen mixture multi-hollow discharge plasmas International conference

    Y. Torigoe, S. Toko, W. Chen, D. Yamashita, H. Seo, N. Itagaki, K. Kamataki, K. Koga, and M. Shiratani

    12th Asia Pacific Conference on Plasma Science and Technology (APCPST) and 27th Symposium on Plasma Science for Materials (SPSM)  2014.9 

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    Event date: 2014.8 - 2014.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Adelaid   Country:Australia  

  • Stability of nanoparticle growth processes in reactive plasmas International conference

    M. Shiratani, H. Seo, K. Koga, N. Itagaki

    15th IUMRS-International Conference in Asia  2014.8 

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    Event date: 2014.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka University   Country:Japan  

  • RF Magnetron sputtering of low-resistive ZnO:Ga films with buffer layers fabricated via nitrogen mediated crystallization International conference

    T. Nakanishi, I. Suhariadi, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    15th IUMRS-International Conference in Asia  2014.8 

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    Event date: 2014.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka University   Country:Japan  

  • Epitaxial growth of sputter-deposited ZnO films via nitrogen mediated crystallization: effects of nitrogen flow rate International conference

    T. Ide, K. Matsushima, R. Shimizu, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    15th IUMRS-International Conference in Asia  2014.8 

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    Event date: 2014.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka University   Country:Japan  

  • Epitaxial growth of In-rich ZnInON films by RF magnetron sputtering International conference

    K. Matsuhima, R. Shimizu, T. Ide, D. Yamashita, H. Seo, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    15th IUMRS-International Conference in Asia  2014.8 

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    Event date: 2014.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka University   Country:Japan  

  • Epitaxial growth of a novel widegap semiconductor ZnGaON by magnetron sputtering International conference

    R. Shimizu, K. Matsushima, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    15th IUMRS-International Conference in Asia  2014.8 

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    Event date: 2014.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka University   Country:Japan  

  • Synthesis of In nanoparticles using RF sputtering for evaluating nanoparticle kinetics in living body International conference

    T. Amano, K. Koga, T. Sarinont, N. Itagaki, M. Shiratani, N. Hayashi, Y. Nakatsu, T. Tsuzuki, M. Hirata, A. Tanaka

    15th IUMRS-International Conference in Asia  2014.8 

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    Event date: 2014.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka University   Country:Japan  

  • Si QD/PEDOT:PSS Hybrid Solar Cells Using Si Nanoparticles Fabricated by Multi-Hollow Plasma CVD International conference

    S. Hashimoto, D. Ichida, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    15th IUMRS-International Conference in Asia  2014.8 

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    Event date: 2014.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka University   Country:Japan  

  • Real Time Deposition Measurement of Dust Particles Generated by Plasma-Wall Interaction International conference

    M. Tateishi, K. Koga, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura

    15th IUMRS-International Conference in Asia  2014.8 

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    Event date: 2014.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka University   Country:Japan  

  • Hydrogen Concentration Associated with Si-H2 Bonds in Films Deposited by High Frequency Multi-Hollow Discharge Plasma CVD Method International conference

    Y. Torigoe, Y. Hashimoto, S. Toko, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    15th IUMRS-International Conference in Asia  2014.8 

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    Event date: 2014.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka University   Country:Japan  

  • Effects of Substrate Temperature on Defect Density of Ge Nanoparticle Films International conference

    D. Ichida, S. Hashimoto, G. Uchida, H. Seo, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    15th IUMRS-International Conference in Asia  2014.8 

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    Event date: 2014.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka University   Country:Japan  

  • Raman spectroscopy of optically trapped single fine particle in plasmas International conference

    T. Ito, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    15th IUMRS-International Conference in Asia  2014.8 

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    Event date: 2014.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka University   Country:Japan  

  • Hysteresis of Cluster Amount in Multi-Hollow Discharge Plasma CVD Method International conference

    S. Toko, Y. Hasahimoto, Y. Kanemitsu, Y. Torigoe, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    15th IUMRS-International Conference in Asia  2014.8 

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    Event date: 2014.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka University   Country:Japan  

  • Counter electrode based on conductive polymer for cost-effective dye-sensitized solar cells International conference

    H. Seo, S. Hashimoto, D. Ichida, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    15th IUMRS-International Conference in Asia  2014.8 

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    Event date: 2014.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka University   Country:Japan  

  • Evaluation of reducing sugar of plants irradiated by air dielectric barrier discharge plasmas International conference

    T. Sarinont, T. Amano, K. Koga, M. Shiratani

    15th IUMRS-International Conference in Asia  2014.8 

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    Event date: 2014.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka University   Country:Japan  

  • Crystal Growth Control of Sputter-Deposited ZnO Films by Nitrogen-Mediated Crystallization Method International conference

    N. Itagaki, I. Suhariadi, D. Yamashita, H. Seo, K. Koga, M. Shiratani

    15th IUMRS-International Conference in Asia  2014.8 

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    Event date: 2014.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka University   Country:Japan  

  • Atmospheric Pressure DBD Plasma Irradiation to Seeds of Glycine max (L.)Merrill and Vigna radiata International conference

    T. Amano, T. Sarinont, K. Koga, and M. Shiratani

    International Conference on Microelectronics and Plasma Technology 2014 (ICMAP2014)  2014.7 

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    Event date: 2014.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Gunsan Saemangeum Convention Center, Gunsan   Country:Korea, Republic of  

  • Suppression of Cluster Incorporation into a-Si:H Films Using a Cluster Eliminating Filter International conference

    Y. Torigoe, C. Weiting, S. Toko, D. Yamashita, H. Seo, N. Itagaki, K. Koga, and M. Shiratani

    International Conference on Microelectronics and Plasma Technology 2014 (ICMAP2014)  2014.7 

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    Event date: 2014.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Gunsan Saemangeum Convention Center, Gunsan   Country:Korea, Republic of  

  • Photovoltaic Application of Polymer: Dye-sensitized Solar Cell and Organic/inorganic Hybrid Solar Cell (Invited) Invited International conference

    H. Seo, S. Hashimoto, D. Ichida, G. Uchida, N. Itagaki, K. Koga, and M. Shiratani

    International Conference on Microelectronics and Plasma Technology 2014 (ICMAP2014)  2014.7 

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    Event date: 2014.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Gunsan Saemangeum Convention Center, Gunsan   Country:Korea, Republic of  

  • Long term effects of atmospheric air plasma irradiated on seeds of Zinnia International conference

    T. Sarinont, T. Amano, K. Koga, and M. Shiratani

    International Conference on Microelectronics and Plasma Technology 2014 (ICMAP2014)  2014.7 

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    Event date: 2014.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Gunsan Saemangeum Convention Center, Gunsan   Country:Korea, Republic of  

  • Plasma agriculture: what plasma can do for agriculture (Invited) Invited International conference

    M. Shiratani and K. Koga

    19th Korea-Japan Workshop on Advanced Plasma Processes and Diagnostics & 6th Workshop for NU-SKKU Joint Institute for Plasma-Nano Materials  2014.7 

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    Event date: 2014.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:NFRI Plasma Technology Research Center, Gunsan   Country:Korea, Republic of  

  • Pulmonary Toxic Effects of Indium-Tin Oxide Nanoparticles in Rats International conference

    Y. Nakatsu, T. Tsuzuki, A. Tanaka, M.Hirata, K. Koga, and M. Shiratani

    19th Korea-Japan Workshop on Advanced Plasma Processes and Diagnostics & 6th Workshop for NU-SKKU Joint Institute for Plasma-Nano Materials  2014.7 

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    Event date: 2014.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:NFRI Plasma Technology Research Center, Gunsan   Country:Korea, Republic of  

  • Production of indium nanoparticles for nano-safety evaluation International conference

    T. Amano, K. Koga, M. Shiratani, and A. Tanaka

    19th Korea-Japan Workshop on Advanced Plasma Processes and Diagnostics & 6th Workshop for NU-SKKU Joint Institute for Plasma-Nano Materials  2014.7 

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    Event date: 2014.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:NFRI Plasma Technology Research Center, Gunsan   Country:Korea, Republic of  

  • Photovoltaic Properties of Organic/Inorganic Hybrid Solar Cells with Improved Electrode International conference

    H. Seo, S. Hashimoto, D. Ichida, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    2014 International Symposium on Green Manufacturing and Applications (ISGMA 2014)  2014.6 

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    Event date: 2014.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Paradise Hotel, Busan   Country:Korea, Republic of  

  • Indium nanoparticle synthesis using plasmas in water for nanoparticle transport analysis in living body International conference

    T. Amano, K. Koga, M. Shiratani, and A. Tanaka

    26th Symposium on Plasma Physics and Technology  2014.6 

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    Event date: 2014.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Czech Technical University, Prague   Country:Other  

  • プラズマ CVD で作成したGe半導体薄膜の光電特性

    市田大樹, 橋本慎史, 内田儀一郎, 徐鉉雄, 山下大輔, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    平成26年度九州表面・真空研究会2014(兼第19回九州薄膜表面研究会)  2014.6 

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    Event date: 2014.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡教育大学   Country:Japan  

  • Dust collection with dc-biased substrates in large helical device International conference

    M. Tateishi, K. Koga, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, and the LHD Experimental Group

    21th International Conference on Plasma Surface Interactions (PSI2014)  2014.5 

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    Event date: 2014.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ishikawa Ongakudo, Kanazawa   Country:Japan  

  • Enhancement of food energy efficiency using plasmas (Invited) Invited International conference

    M. Shiratani, T. Sarinont, T. Amano, K. Koga, S. Kitazaki, and N. Hayashi

    5th International Conference on Plasma Medicine (ICPM5)  2014.5 

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    Event date: 2014.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nara Prefectural New Public Hall, Nara   Country:Japan  

  • Preservation of Growth Enhancement of Plants after Atmospheric Pressure DBD Plasma Irradiation International conference

    T. Amano, T. Sarinont, S. Kitazaki, N. Hayashi, K. Koga, and M. Shiratani

    5th International Conference on Plasma Medicine (ICPM5)  2014.5 

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    Event date: 2014.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nara Prefectural New Public Hall, Nara   Country:Japan  

  • Effects of ambient gas species for plasma irradiation to seeds on plant growth promotion International conference

    T. Sarinont, T. Amano, K. Koga, and M. Shiratani

    5th International Conference on Plasma Medicine (ICPM5)  2014.5 

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    Event date: 2014.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nara Prefectural New Public Hall, Nara   Country:Japan  

  • In-situ Measurements of Volume Fraction of cDusters in Films During Plasma CVD International conference

    M. Shiratani, S. Toko, K. Koga, N. Itagaki, H. Seo

    International Conference on Metallurgical Coatings and Thin Films(ICMCTF 2014)  2014.5 

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    Event date: 2014.4 - 2014.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Town & Country Resort Hotel, San Diego   Country:Other  

  • Si/SiC coreshell nanoparticle composite anode for Li ion batteries International conference

    M. Shiratani, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, K. Koga

    2014 MRS Spring Meeting  2014.4 

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    Event date: 2014.4

    Language:English   Presentation type:Oral presentation (general)  

    Venue:San Francisco, California   Country:Other  

  • ナノ粒子含有振幅変調放電プラズマ中のAr準安定原子密度

    白谷正治, 古閑一憲, 森田康彦, 伊東鉄平, 内田儀一郎, 鎌滝晋礼, 徐鉉雄, 板垣奈穂

    日本物理学会 第69回年次大会  2014.3 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  • 反応性プラズマ中のナノ粒子成長とプラズマ揺らぎ

    白谷正治, 古閑一憲, 内田儀一郎, 鎌滝晋礼, 徐鉉雄, 板垣奈穂

    2014年 第61回応用物理学会春季学術講演会  2014.3 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学   Country:Japan  

  • プラズマプロセスによるグラファイト被覆金属ナノ微粒子の表面修

    永津雅章, 楊恩波, Anchu Viswan, 張晗, 古閑一憲, 白谷正治

    2014年 第61回応用物理学会春季学術講演会  2014.3 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学   Country:Japan  

  • グラファイト外包磁気ナノ微粒子噴上げ効果を利用したAr/NH3 RFプラズマによる表面修飾の高効率化とプラズマ表面相互作用の分光計測

    張晗, 楊恩波, 古閑一憲, 白谷正治, 永津雅章

    2014年 第61回応用物理学会春季学術講演会  2014.3 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学   Country:Japan  

  • 反応性プラズマにおけるナノ粒子成長のバイスペクトル解析

    森田康彦, 伊東鉄平, 山下大輔, 内田儀一郎, 鎌滝晋礼, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    2014年 第61回応用物理学会春季学術講演会  2014.3 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学   Country:Japan  

  • 水素原子源付きプラズマCVDで作製した炭素薄膜の堆積速度:圧力と電極間距離への依存性

    董ショウ, 古閑一憲, 山下大輔, 徐鉉雄, 板垣奈穂, 白谷正治

    2014年 第61回応用物理学会春季学術講演会  2014.3 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学   Country:Japan  

  • プラズマ中に光捕捉した単一微粒子を用いたプラズマと界面の相互作用評価

    伊東鉄平, 森田康彦, 岩下伸也, 山下大輔, 内田儀一郎, 鎌滝晋礼, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    2014年 第61回応用物理学会春季学術講演会  2014.3 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学   Country:Japan  

  • シランプラズマ中のクラスター量に対する振幅変調放電の効果

    都甲将, 橋本優史, 金光善徳, 鳥越祥宏, 徐鉉雄, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    2014年 第61回応用物理学会春季学術講演会  2014.3 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学   Country:Japan  

  • RFマグネトロンスパッタリング法による高In組成ZnInON膜の作製

    松島宏一, 清水僚太, 井手智章, 山下大輔, 鎌滝晋礼, 徐鉉雄, 古閑一憲, 白谷正治, 板垣奈穂

    2014年 第61回応用物理学会春季学術講演会  2014.3 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学   Country:Japan  

  • RFスパッタリングによるInナノ粒子の作製とそのラット体内の動態

    天野孝昭, 古閑一憲, Sarinont Thapanut, 板垣奈穂, 白谷正治, 林信哉, 中津可道, 續輝久, 平田美由紀, 田中昭代

    2014年 第61回応用物理学会春季学術講演会  2014.3 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学   Country:Japan  

  • Transport of fine particles produced by interactions between H2 plasmas and carbon wall International conference

    M. Tateishi, K. Koga, K. Kamataki, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, the LHD Experimental Group

    6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterial/7th International Conference on Plasma Nanotechnology and Science (ISPlasma2014/IC-PLANTS2014)  2014.3 

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    Event date: 2014.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Meijo University, Nagoya   Country:Japan  

  • Growth Enhancement of Plants Due to Plasma Atmospheric Pressure Irradiation to Seeds in Liquid International conference

    T. Sarinont, K. Koga, S. Kitazaki, N. Hayashi, M. Shiratani

    6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterial/7th International Conference on Plasma Nanotechnology and Science (ISPlasma2014/IC-PLANTS2014)  2014.3 

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    Event date: 2014.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Meijo University, Nagoya   Country:Japan  

  • Fabrication of Qunatum-Dot Sensitized Solar Cells Using Ge Nanoparticle Films Deposited by High Pressure Rf Magnetron Sputtering Method International conference

    D. Ichida, S. Hashimoto, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterial/7th International Conference on Plasma Nanotechnology and Science (ISPlasma2014/IC-PLANTS2014)  2014.3 

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    Event date: 2014.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Meijo University, Nagoya   Country:Japan  

  • Effects of Amplitude Modulation of Discharge Voltage on Volume Fraction of Clusters in Si Thin Films Depoisted by Multi-Hollow Discharge Plasma CVD International conference

    S. Toko, Y. Hashimoto, Y. Kanemitu, Y. Torigoe, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterial/7th International Conference on Plasma Nanotechnology and Science (ISPlasma2014/IC-PLANTS2014)  2014.3 

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    Event date: 2014.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Meijo University, Nagoya   Country:Japan  

  • Band gap control of nc-Si thin films deposited multi-hollow discharge plasma CVD International conference

    Y. Kanemitsu, G. Uchida, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, and M. Shiratani

    18th Korea - Japan Workshop on Advanced Plasma Processes and Diagnostics  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:NISHIJIN PLAZA, Fukuoka   Country:Japan  

  • Long Term Growth Curve of Raphanus sativus L. after Atmospheric Pressure DBD Plasma Irradiation International conference

    T. Amano, T. Sarinont, S. Kitazaki, N. Hayashi, K. Koga, M. Shiratani

    18th Korea - Japan Workshop on Advanced Plasma Processes and Diagnostics  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:NISHIJIN PLAZA, Fukuoka   Country:Japan  

  • Effects of Atmospheric Air Plasma Treatments of Seeds of Oryza sativa,Raphanus sativus L. and Zinnia on Plant Growth International conference

    T. Sarinont, T. Amano, K. Koga, M. Shiratani

    18th Korea - Japan Workshop on Advanced Plasma Processes and Diagnostics  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:NISHIJIN PLAZA, Fukuoka   Country:Japan  

  • Photocurrent generation of quantum-dot sensitized solar cells using group-IV semiconductor nanoparticle films (Invited) Invited International conference

    G. Uchida, D. Ichida, S. Hashimoto, H. Seo, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani

    18th Korea - Japan Workshop on Advanced Plasma Processes and Diagnostics  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Sputtering Fabrication of novel semiconductor ZnGaON with wide bandgap for optoelectronic devices International conference

    R. Shimizu, K. Matsushima, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, and N. Itagaki

    18th Korea - Japan Workshop on Advanced Plasma Processes and Diagnostics  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:NISHIJIN PLAZA, Fukuoka   Country:Japan  

  • Si nano-particles: Its quantum characteristics and application for photovoltaics (Invited) Invited International conference

    H. Seo, D. Ichida, S. Hashimoto, G. Uchida, K. Kamataki, N. Itagaki, K. Koga and M. Shiratani

    2014 Japan-Korea Joint Symposium on Advanced Solar Cells  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:NISHIJIN PLAZA, Fukuoka   Country:Japan  

  • Selective removal of clusters in silane plasmas by cluster eliminating filter International conference

    Y. Hashimoto, Y. Torigoe, S. Toko, D. Yamashita, H. Seo, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani

    18th Korea - Japan Workshop on Advanced Plasma Processes and Diagnostics  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:NISHIJIN PLAZA, Fukuoka   Country:Japan  

  • Magnetron sputtering of In2O3:Sn films with buffer layers fabricated via nitrogen mediated crystallization International conference

    K. Oshikawa, I. Suhariadi, D. Yamashita, H. Seo, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    18th Korea - Japan Workshop on Advanced Plasma Processes and Diagnostics  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:NISHIJIN PLAZA, Fukuoka   Country:Japan  

  • Ga-doped Zinc Oxide (GZO) Films with Buffer Layers Fabricated via Nitrogen Mediated Crystallization by RF Magnetron Sputtering Method International conference

    T. Nakanishi, K. Oshikawa, I. Suhariadi, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    18th Korea - Japan Workshop on Advanced Plasma Processes and Diagnostics  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:NISHIJIN PLAZA, Fukuoka   Country:Japan  

  • Flux Control of Dust Particles Generated due to Interactions between Graphite Wall and H2 Plasmas using DC Biased Substrates International conference

    M. Tateishi, K. Koga, K. Kamataki, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, the LHD Experimental Group

    18th Korea - Japan Workshop on Advanced Plasma Processes and Diagnostics  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:NISHIJIN PLAZA, Fukuoka   Country:Japan  

  • Fabrication of Size-controlled Ge Nanoparticle Films Using High Pressure RF Sputtering Method for Quantum Dot Solar Cell International conference

    D. Ichida, S. Hashimoto, G. Uchida, H. Seo, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, and M. Shiratani

    18th Korea - Japan Workshop on Advanced Plasma Processes and Diagnostics  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:NISHIJIN PLAZA, Fukuoka   Country:Japan  

  • Fabrication of InN-rich ZnInON films for photovoltaic appplications by RF magnetron sputtering International conference

    K. Matsushima, R. Shimizu, T. Ide, D. Yamashita, H. Seo, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    2014 Japan-Korea Joint Symposium on Advanced Solar Cells  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:NISHIJIN PLAZA, Fukuoka   Country:Japan  

  • Evaluation of Interactions between Plasmas and Interface using Optically Trapped Single Fine Particle International conference

    T. Ito, Y. Morita, K. Koga, G. Uchida, N. Itagaki, H. Seo, K. Kamataki, and M. Shiratani

    18th Korea - Japan Workshop on Advanced Plasma Processes and Diagnostics  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:NISHIJIN PLAZA, Fukuoka   Country:Japan  

  • Epitaxial growth of ZnO films on lattice mismatch substrates by magnetron sputtering: Effects of buffer layers prepared via nitrogen mediated crystallization International conference

    T. Ide, K. Matsushima, R. Shimizu, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    18th Korea - Japan Workshop on Advanced Plasma Processes and Diagnostics  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:NISHIJIN PLAZA, Fukuoka   Country:Japan  

  • Effects of Hydrogen Dilution on Structure of Ge Quantum Dot Film Deposited by Using High Pressure rf Sputtering International conference

    S. Hashimoto, D. Ichida, K. Kamataki, H. Seo, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    18th Korea - Japan Workshop on Advanced Plasma Processes and Diagnostics  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:NISHIJIN PLAZA, Fukuoka   Country:Japan  

  • Effects of Gas Pressure on Deposition Rate of Anisotropic Plasma CVD International conference

    X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani

    18th Korea - Japan Workshop on Advanced Plasma Processes and Diagnostics  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:NISHIJIN PLAZA, Fukuoka   Country:Japan  

  • Effects of Amplitude Modulation on Stability of Hydrogenated Amorphous Silicon Films Deposited using Multi-Hollow Discharge Plasma CVD Method International conference

    Y. Torigoe, Y. Hashimoto, S. Toko, D. Yamashita, N. Itagaki, H. Seo, K. Kamataki, K. Koga, M. Shiratani

    2014 Japan-Korea Joint Symposium on Advanced Solar Cells  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:NISHIJIN PLAZA, Fukuoka   Country:Japan  

  • Effects of Amplitude Modulation of Discharge Voltage on Cluster Amount in Downstream Region of Multi-Hollow Silane Discharge Plasmas Studied by Laser Light Scattering Method International conference

    S. Toko, Y. Hashimoto, Y. Kanemitu, Y. Torigoe, H. Seo, K. Kamataki, N. Itagaki, K. Koga, and M. Shiratani

    2014 Japan-Korea Joint Symposium on Advanced Solar Cells  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:NISHIJIN PLAZA, Fukuoka   Country:Japan  

  • Bispectrum analysis of nanoparticle growth in reactive dusty plasmas International conference

    Y. Morita, T. Ito, S. Iwashita, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, and M. Shiratani

    18th Korea - Japan Workshop on Advanced Plasma Processes and Diagnostics  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:NISHIJIN PLAZA, Fukuoka   Country:Japan  

  • A model for correlation between plasma fluctuation and fluctuation of nanoparticle growth in reactive plasmas International conference

    M. Shiratani, K. Koga, K. Kamataki, S. Iwashita, Y. Morita, H. Seo, N. Itagaki, G. Uchida

    8th International Conference on Reactive Plasmas and 31st Symposium on Plasma Processing (ICRP-8/SPP-31)  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Visualization of oxidizing substances generated by atmospheric pressure non-thermal plasma jet with water International conference

    T. Kawasaki, K. Kawano, H. Mizoguchi, Y. Yano, K. Yamashita, M. Sakai, G. Uchida, K. Koga, M. Shiratani

    8th International Conference on Reactive Plasmas and 31st Symposium on Plasma Processing (ICRP-8/SPP-31)  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Long term growth of radish sprouts after atmospheric pressure DBD plasma irradiation to seeds International conference

    T. Amano, T. Sarinont, S. Kitazaki, N. Hayashi, K. Koga, M. Shiratani

    8th International Conference on Reactive Plasmas and 31st Symposium on Plasma Processing (ICRP-8/SPP-31)  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Effects of growth enhancement by plasma irradiation to seeds in water International conference

    T. Sarinont, K. Koga, S. Kitazaki, M. Shiratani, N. Hayashi

    8th International Conference on Reactive Plasmas and 31st Symposium on Plasma Processing (ICRP-8/SPP-31)  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Quantum characterization and photovoltaic application of Si nano-particles fabricated by multi-hollow plasma discharge chemical vapor deposition International conference

    H. Seo, D. Ichida, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    8th International Conference on Reactive Plasmas and 31st Symposium on Plasma Processing (ICRP-8/SPP-31)  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Fabrication of SiC nanoparticles as high capacity electrodes for Li-ion batteries International conference

    G. Uchida, K. Kamataki, D. Ichida, Y. Morita, H. Seo, N. Itagaki, K. Koga, T. Ishihara, M. Shiratani

    8th International Conference on Reactive Plasmas and 31st Symposium on Plasma Processing (ICRP-8/SPP-31)  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Epitaxial growth of ZnO films on sapphire substrates by magnetron sputtering: Effects of buffer layers prepared via nitrogen mediated crystallization International conference

    T. Ide, K. Matsushima, R. Shimizu, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    8th International Conference on Reactive Plasmas and 31st Symposium on Plasma Processing (ICRP-8/SPP-31)  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Subacute toxicity of gallium arsenide, indium arsenide and arsenic trioxide following intermittent intrantracheal instillations to the lung of rats International conference

    A. Tanaka, M. Hirata, K. Koga, N. Itagaki, M. Shiratani, N. Hayashi, G. Uchida

    8th International Conference on Reactive Plasmas and 31st Symposium on Plasma Processing (ICRP-8/SPP-31)  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Study on nitrogen desorption behavior of sputtered ZnO for transparent conducting oxide International conference

    I. Suhariadi, K. Oshikawa, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    8th International Conference on Reactive Plasmas and 31st Symposium on Plasma Processing (ICRP-8/SPP-31)  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Sputtering fabrication of a novel widegap semiconductor ZnGaON for optoelectronic devices with wide bandgap for optical device International conference

    R. Shimizu, K. Matsushima, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    8th International Conference on Reactive Plasmas and 31st Symposium on Plasma Processing (ICRP-8/SPP-31)  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Sputter Deposition of Ga-doped Zinc Oxide (GZO) Films with Buffer Layers Fabricated via Nitrogen Mediated Crystallization International conference

    T. Nakanishi, K. Oshikawa, I. Suhariadi, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    8th International Conference on Reactive Plasmas and 31st Symposium on Plasma Processing (ICRP-8/SPP-31)  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Spatial profile of flux of dust particles in hydrogen helicon plasmas International conference

    M. Tateishi, K. Koga, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, the LHD Experimental Group

    8th International Conference on Reactive Plasmas and 31st Symposium on Plasma Processing (ICRP-8/SPP-31)  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Raman spectroscopy of a fine particle optically trapped in plasma International conference

    D. Yamashita, K. Koga, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani

    8th International Conference on Reactive Plasmas and 31st Symposium on Plasma Processing (ICRP-8/SPP-31)  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Pressure dependence of carbon film deposition using H-assisted plasma CVD International conference

    X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, K. Takenaka, Y. Setsuhara, M. Sekine, M. Hori

    8th International Conference on Reactive Plasmas and 31st Symposium on Plasma Processing (ICRP-8/SPP-31)  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Nanoparticle amount in reactive plasmas with amplitude modulation detected by twodimensional laser light scattering method International conference

    T. Ito, Y. Morita, S. Iwashita, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    8th International Conference on Reactive Plasmas and 31st Symposium on Plasma Processing (ICRP-8/SPP-31)  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Magnetron sputtering of low-resistive In2O3:Sn films with buffer layers fabricated via nitrogen mediated crystallization International conference

    K. Oshikawa, I. Suhariadi, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, N. Itagaki

    8th International Conference on Reactive Plasmas and 31st Symposium on Plasma Processing (ICRP-8/SPP-31)  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Fine response of deposition rate of Si films deposited by multi-hollow discharge plasma CVD with amplitude modulation International conference

    S. Toko, Y. Hashimoto, Y. Kanemitu, Y. Torigoe, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    8th International Conference on Reactive Plasmas and 31st Symposium on Plasma Processing (ICRP-8/SPP-31)  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Fabrication of In-rich ZnInON filmswith narrow band gap by RF magnetron sputtering International conference

    K. Matsushima, R. Shimizu, T. Ide, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    8th International Conference on Reactive Plasmas and 31st Symposium on Plasma Processing (ICRP-8/SPP-31)  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Analysis of fluctuation of Ar metastable density and nanoparticle amount in capacitively coupled discharges with amplitude modulation International conference

    Y. Morita, T. Ito, S. Iwashita, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    8th International Conference on Reactive Plasmas and 31st Symposium on Plasma Processing (ICRP-8/SPP-31)  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Substrate temperature dependence of hydrogen content of a-Si:H film deposited with a cluster-eliminating filter International conference

    Y. Hashimoto, S. Toko, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    8th International Conference on Reactive Plasmas and 31st Symposium on Plasma Processing (ICRP-8/SPP-31)  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Fabrication of size-controlled Ge nanoparticle films varying gas flow rate using high pressure rf magnetron sputtering method International conference

    D. Ichida, S. Hashimoto, G. Uchida, H. Seo, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    8th International Conference on Reactive Plasmas and 31st Symposium on Plasma Processing (ICRP-8/SPP-31)  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Effects of amplitude modulation on deposition of hydrogenated amorphous silicon films using multi-Hollow discharge plasma CVD method International conference

    Y. Torigoe, Y. Hashimoto, S. Toko, Y. Kim, D. Yamashita, H. Seo, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani

    8th International Conference on Reactive Plasmas and 31st Symposium on Plasma Processing (ICRP-8/SPP-31)  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Deposition of Crystalline Ge Nanoparticle Films Varying H2 Dilution Ratio Using High Pressure rf Magnetron Sputtering International conference

    S. Hashimoto, D. Ichida, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    8th International Conference on Reactive Plasmas and 31st Symposium on Plasma Processing (ICRP-8/SPP-31)  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Combinatorial evaluation of optical properties of crystalline Si nanoparticle embedded Si films deposited by a multi-hollow discharge plasma CVD method International conference

    Y. Kanemitsu, G. Uchida, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    8th International Conference on Reactive Plasmas and 31st Symposium on Plasma Processing (ICRP-8/SPP-31)  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Sputtering growth of single-crystalline ZnO-based semiconductors on lattice mismatched substrates (Invited) Invited International conference

    N. Itagaki, K. Matsushima, I. Suhariadi, D. Yamashita, H. Seo, G. Uchida, K. Koga, M. Shiratani

    International Society for Optics and Photonics, Photonics West 2014  2014.2 

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    Event date: 2014.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:The Moscone Center, San Francisco   Country:Other  

  • Solar cells using nanoparticles of group IV semiconductor aiming at MEG effects International conference

    G. Uchida, H. Seo, D. Ichida, N. Itagaki, K, Koga, M. Shiratani

    6th International Symposium on Innovative Solar Cells  2014.1 

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    Event date: 2014.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tokyo Tech Front   Country:Japan  

  • Nanoparticle composite plasma CVD films Fundamental and applications (Invited) Invited International conference

    M. Shiratani, K. Koga, G. Uchida, N. Itagaki, H. Seo, K. Kamataki

    The 9th EU-Japan Joint Symposium on Plasma Processing  2014.1 

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    Event date: 2014.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Bohinj Park ECO Hotel   Country:Slovenia  

  • 水中種子へのプラズマ照射の成長促進効果

    白谷正治, T. Sarinont, 天野孝昭, 古閑一憲, 北崎訓, 林信哉

    プラズマ・核融合学会 九州・沖縄・山口支部第17回支部大会  2013.12 

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    Event date: 2013.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:佐世保工業高等専門学校   Country:Japan  

  • マルチホロー放電プラズマCVDにおけるa-Si:H膜中クラスター混入量に対する振幅変調放電の効果

    都甲将, 橋本優史, 金光善徳, 鳥越祥宏, 徐鉉雄, 内田儀一郎, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会 九州・沖縄・山口支部第17回支部大会  2013.12 

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    Event date: 2013.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:佐世保工業高等専門学校   Country:Japan  

  • マグネトロンスパッタ法による窒素添加結晶化バッファー層を用いた低抵抗In2O3:Sn薄膜の作製

    押川晃一郎, 板垣奈穂, 白谷正治, 古閑一憲, 内田儀一郎, 鎌滝晋礼, 徐鉉雄, 山下大輔, I. Suhariadi

    プラズマ・核融合学会 九州・沖縄・山口支部第17回支部大会  2013.12 

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    Event date: 2013.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:佐世保工業高等専門学校   Country:Japan  

  • スパッタリング法による狭ギャップ半導体ZnInON膜の高品質結晶成長

    松島宏一, 清水僚太, 山下大輔, 鎌滝晋礼, 徐鉉雄, 内田儀一郎, 古閑一憲, 白谷正治, 板垣奈穂

    プラズマ・核融合学会 九州・沖縄・山口支部第17回支部大会  2013.12 

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    Event date: 2013.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:佐世保工業高等専門学校   Country:Japan  

  • Ga添加酸化亜鉛薄膜に対する窒素添加結晶化法を用いた酸化亜鉛バッファー層の効果

    押川晃一郎, I. Suhariadi, 山下大輔, 徐鉉雄, 古閑一憲, 白谷正治, 板垣奈穂

    プラズマ・核融合学会 九州・沖縄・山口支部第17回支部大会  2013.12 

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    Event date: 2013.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:佐世保工業高等専門学校   Country:Japan  

  • プラズマを用いたⅣ族半導体ナノ粒子膜の堆積とそのデバイス応用 (Invited) Invited

    内田儀一郎, 徐鉉雄, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    第16回プラズマエレクトロニクス分科会 プラズマ新領域研究会  2013.12 

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    Event date: 2013.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大学利用施設UNITY, 神戸   Country:Japan  

  • Transport of Carbon Dust Particles Produced by Interactions between H2 Plasmas and Graphite Target

    M. Tateishi, K. Koga, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, LHD Experimental Group

    14th Workshop on Fine Particle Plasmas  2013.12 

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    Event date: 2013.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:National Institute for Fusion Science, Toki   Country:Japan  

  • Time evolution of spatial profile of nanoparticle amount in amplitude modulated capacitively coupled reactive plasmas

    M. Shiratani, K. Koga, Y. Morita, S. Iwashita, H. Seo, K. Kamataki, N. Itagaki, G. Uchida

    23rd Annual Meeting of MRS-JAPAN 2013  2013.12 

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    Event date: 2013.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Effects of Water on Interaction between Plant Growth and Plasma

    T. Sarinont, K. Koga, S. Kitazaki, M. Shiratani, N. Hayashi

    23rd Annual Meeting of MRS-JAPAN 2013  2013.12 

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    Event date: 2013.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Quantum characteristics of crystalline Si nano-particles and their application for photochemical solar cells (Invited) Invited

    H. Seo, D. Ichida, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    23rd Annual Meeting of MRS-JAPAN 2013  2013.12 

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    Event date: 2013.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Morphological Characterization of ZnO Thin Films Fabricated via Nitrogen Mediated Crystallization: Effects of Substrate Temperature

    I. Suhariadi, K. Oshikawa, H. Seo, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    23rd Annual Meeting of MRS-JAPAN 2013  2013.12 

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    Event date: 2013.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Magnetron sputtering of low-resistive transparent conductive oxide films with double buffer layers fabricated via nitrogen mediated crystallization

    押川晃一郎, I. Suhariadi, 山下大輔, 徐鉉雄, 鎌滝晋礼, 内田儀一郎, 古閑一憲, 白谷正治, 板垣奈穂

    23rd Annual Meeting of MRS-JAPAN 2013  2013.12 

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    Event date: 2013.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Effects of Amplitude Modulation of Discharge Voltage of Multi-Hollow Silane Discharges on Amount of Clusters Formed in the Discharges

    S. Toko, Y. Kim, Y. Hashimoto, Y. Kanemitsu, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    23rd Annual Meeting of MRS-JAPAN 2013  2013.12 

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    Event date: 2013.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • Deposition of Ge nanoparticle composite films and their application to solar cells

    G. Uchida, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    23rd Annual Meeting of MRS-JAPAN 2013  2013.12 

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    Event date: 2013.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama Port Opening Plaza   Country:Japan  

  • 水素プラズマとグラファイト壁の相互作用により発生するダスト粒子の輸送

    立石瑞樹, 古閑一憲, 山下大輔, 鎌滝晋礼, 内田儀一郎, 徐鉉雄, 板垣奈穂, 白谷正治, 芦川直子, 増崎貴, 西村清彦, 相良明男, LHD実験グループ

    プラズマ・核融合学会 第30回年会  2013.12 

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    Event date: 2013.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  • グラフェン外包磁気ナノ微粒子の表面化学修飾におけるRFプラズマ中への微粒子導入の効果

    張晗, 楊恩波, 高田昇治, 内田儀一郎, 古閑一憲, 白谷正治, 永津雅章

    プラズマ・核融合学会 第30回年会  2013.12 

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    Event date: 2013.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  • プラズマ中の活性酸素種による植物のレドックス状態変化と成長促進効果

    林信哉, 内田詳平, 小野大帝, 北崎訓, 古閑一憲, 白谷正治

    プラズマ・核融合学会 第30回年会  2013.12 

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    Event date: 2013.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  • Novel metal oxinitride materials for optoelectronic applications (Invited) Invited International conference

    M. Shiratani, N. Itagaki., K. Matsushima, R. Shimizu, H. Seo, K. Koga

    2013 EMN Fall Meeting  2013.12 

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    Event date: 2013.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Orland, Florida   Country:Other  

  • Nanostructure control of Si-based solar cells using plasma CVD (Invited) Invited International conference

    M. Shiratani, G. Uchida, H. Seo, D. Ichida, K. Koga, N. Itagaki, K. Kamataki

    THERMEC 2013  2013.12 

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    Event date: 2013.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Las Vagas   Country:Other  

  • RFマグネトロンスパッタリング法を用いて作製したGeナノ粒子膜の特性

    橋本慎史, 市田大樹, 徐鉉雄, 内田儀一郎, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    平成25年度応用物理学会九州支部学術講演会  2013.12 

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    Event date: 2013.11 - 2013.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:長崎大学   Country:Japan  

  • 種子への大気圧DBDプラズマ照射後のカイワレ大根成長の時間推移

    天野孝昭, サリノント タパナット, 北﨑訓, 古閑一憲, 白谷正治, 林信哉

    平成25年度応用物理学会九州支部学術講演会  2013.11 

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    Event date: 2013.11 - 2013.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:長崎大学   Country:Japan  

  • 酸素プラズマ照射による植物細胞の抗酸化活性変化

    林信哉, 小野大帝, 内田祥平, 北崎訓, 古閑一憲, 白谷正治

    平成25年度応用物理学会九州支部学術講演会  2013.11 

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    Event date: 2013.11 - 2013.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:長崎大学   Country:Japan  

  • プラズマジェットから発生する酸化性物質の可視化

    山下佳亮, 河野航大, 溝口博士, 矢野裕士, 川崎敏之, 坂井美穂, 内田儀一郎, 古閑一憲, 白谷正治

    平成25年度応用物理学会九州支部学術講演会  2013.11 

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    Event date: 2013.11 - 2013.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:長崎大学   Country:Japan  

  • マグネトロンスパッタ法による格子不整合基板上へのエピタキシャルZnO膜の作製:窒素添加結晶化バッファー層の効果

    井手智章, 松島宏一, 清水僚太, 山下大輔, 徐鉉雄, 古閑一憲, 白谷正治, 板垣奈穂

    平成25年度応用物理学会九州支部学術講演会  2013.11 

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    Event date: 2013.11 - 2013.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:長崎大学   Country:Japan  

  • 反応性プラズマ中で発生するナノ粒子量の時空間分布

    伊東鉄平, 森田康彦, 岩下伸也, 山下大輔, 内田儀一郎, 鎌滝晋礼, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    平成25年度応用物理学会九州支部学術講演会  2013.12 

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    Event date: 2013.11 - 2013.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:長崎大学   Country:Japan  

  • 振幅変調マルチホロー放電プラズマCVD法を用いた 水素化アモルファスシリコン薄膜の作製

    鳥越祥宏, 橋本優史, 都甲将, 金淵元, 山下大輔, 徐鉉雄, 板垣奈穂, 鎌滝晋礼, 古閑一憲, 白谷正治

    平成25年度応用物理学会九州支部学術講演会  2013.12 

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    Event date: 2013.11 - 2013.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:長崎大学   Country:Japan  

  • Control of plasma CVD films containing group IV nanoparticles (Invited) Invited International conference

    M. Shiratani, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga

    International Conference on Surface Engineering (ICSE 2013)  2013.11 

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    Event date: 2013.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Haeundae Grand Hotel   Country:Korea, Republic of  

  • Performance enhancement of Si quantum dot-sensitized solar cells based on Si functionalization and multi-layered structure International conference

    H. Seo, D. Ichida, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    International Conference on Surface Engineering (ICSE 2013)  2013.11 

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    Event date: 2013.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Haeundae Grand Hotel   Country:Korea, Republic of  

  • 高効率太陽電池のための狭バンドギャップZnInON膜の作成-[O]/([O]+[N])依存性-

    松島宏一, 清水僚太, 山下大輔, 鎌滝晋礼, 徐鉉雄, 内田儀一郎, 古閑一憲, 白谷正治, 板垣奈穂

    第5回薄膜太陽電池セミナー  2013.11 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  • 膜中クラスター退席分率のAM変調依存性

    都甲将, 橋本優史, 金光善徳, 鳥越祥宏, 徐鉉雄, 内田儀一郎, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    第5回薄膜太陽電池セミナー  2013.11 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  • Fabrication of Dye and Si Quantum Dot Co-sensitized Solar Cells for Performance Enhancement International conference

    H. Seo, M.-K. Son, D. Ichida, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    The 2nd International Conference on Advanced Electromaterials (ICAE 2013)  2013.11 

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    Event date: 2013.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Jeju   Country:Korea, Republic of  

  • Correlation between Species Generated by Atmospheric Pressure Air Plasmas and Growth Enhancement of Oryza Sativa International conference

    T. Sarinont, K. Koga, M. Shiratani

    The 6th Thailand-Japan International Academic Conference 2013  2013.11 

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    Event date: 2013.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Osaka University   Country:Japan  

  • シート状プラズマジェットの照射領域制御とその評価

    川崎敏之, 坂井美穂, 内田儀一郎, 古閑一憲, 白谷正治

    第29回九州山口プラズマ研究会  2013.11 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:クレドホテル臼杵   Country:Japan  

  • Deposition of Size-controlled Ge Nanoparticle Film by Highpressure rf Magnetron Sputtering for Quantum Dot Solar Cells International conference

    D. Ichida, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    AVS 60th International Symposium and Exhibition  2013.10 

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    Event date: 2013.10 - 2013.11

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Long Beach, California   Country:Other  

  • PS+TF-MoA11 Two-dimensional Growth of Novel ZnO based Semiconductor ZnInON with Tunable Bandgap by Magnetron Sputtering International conference

    K. Matsushima, R. Shimizu, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    AVS 60th International Symposium and Exhibition  2013.10 

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    Event date: 2013.10 - 2013.11

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Long Beach, California   Country:Other  

  • Photocurrent Generation Characteristics of Ge Quantum-Dot Solar Cells International conference

    G. Uchida, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    AVS 60th International Symposium and Exhibition  2013.10 

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    Event date: 2013.10 - 2013.11

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Long Beach, California   Country:Other  

  • Selective Removal of Clusters in Silane Plasmas Using Cluster Eliminating Filter International conference

    Y. Hashimoto, S. Toko, Y. Kim, D. Yamashita, G. Uchida, H. Seo, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani

    The 23rd International Photovoltaic Science and Engineering Conference  2013.10 

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    Event date: 2013.10 - 2013.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Taipei International Convention Center   Country:Taiwan, Province of China  

  • Pulmonary toxicity of copper indium gallium diselenide particles in rats International conference

    A. Tanaka, M. Hirata, K. Koga, N. Hayashi, M. Shiratani and Y. Kiyohara

    The 6th International Symposium on Nanotechnology, Occupational and Environmental Health  2013.10 

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    Event date: 2013.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya Congress Center   Country:Japan  

  • The performance enhancement of dye and quantum dot hybrid nanostructured solar cell with barrier coating International conference

    H. Seo, Y. Wang, D. Ichida, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Taiwan Associatoin for Coatings and Thin Films Technology  2013.10 

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    Event date: 2013.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Grand Hotel Taipei   Country:Taiwan, Province of China  

  • Cluster control plasma CVD for fabrication of stable a-Si:H solar cells International conference

    M. Shiratani, Y. Hashimoto, Y. Kanemitsu, H. Seo, G. Uchida, N. Itagaki, K. Koga

    66th Annual Gaseous Electronics Conference  2013.10 

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    Event date: 2013.9 - 2013.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Princeton, New Jersey   Country:Other  

  • Sputtering deposition of ZnGaInON with tunable bandgap for photovoltaics International conference

    R. Shimizu, K. Matsushima, D. Yamashita, G. Uchida, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    66th Annual Gaseous Electronics Conference  2013.10 

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    Event date: 2013.9 - 2013.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Princeton, New Jersey   Country:Other  

  • Cluster incorporation during amplitude modulated VHF discharge silane plasmas International conference

    S. Toko, Y. Kim, Y. Hashimoto, Y. Kanemitu, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    66th Annual Gaseous Electronics Conference  2013.10 

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    Event date: 2013.9 - 2013.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Princeton, New Jersey   Country:Other  

  • Ar/N2 Magnetron Sputtering Discharges to Control Growth of Transparent Conducting Oxide Films International conference

    K. Oshikawa, I. Suhariadi, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, N. Itagaki

    66th Annual Gaseous Electronics Conference  2013.10 

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    Event date: 2013.9 - 2013.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Princeton, New Jersey   Country:Other  

  • ナノ粒子含有プラズマ系におけるナノ粒子成長

    白谷正治, 森田康彦, 岩下伸也, 古閑一憲, 内田儀一郎, 板垣奈穂, H. Seo, 鎌滝晋礼

    日本物理学会2013年秋季大会  2013.9 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:徳島大学(常三島キャンパス)   Country:Japan  

  • Effects of H2 plasma etching on carbon nanoparticles formed due to interactions betweengraphite target and H2 Plasmas

    M. Tateishi, K. Koga, K. Kamataki, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, the LHD Experimental Group

    第7回プラズマエレクトロニクスインキュベーションホール  2013.9 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:国立中央青少年交流の家, 静岡   Country:Japan  

  • マルチホロー放電プラズマCVD法で堆積したSiナノ粒子膜の光学的バンドギャップ制御

    金光善徳, 内田儀一郎, 市田大樹, 徐鉉雄, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    第7回プラズマエレクトロニクスインキュベーションホール  2013.9 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:国立中央青少年交流の家, 静岡   Country:Japan  

  • ハイスピードカメラを用いたナノ粒子成長プロセスの観測

    伊東鉄平, 森田康彦, 鎌滝晋礼, 内田儀一郎, 徐鉉雄, 山下大輔, 板垣奈穂, 古閑一憲, 白谷正治

    第7回プラズマエレクトロニクスインキュベーションホール  2013.9 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:国立中央青少年交流の家, 静岡   Country:Japan  

  • シリコン量子ドット増感太陽電池の高性能化のための多硫化物電解液の最適化

    橋本慎史, 市田大樹, 徐鉉雄, 内田儀一郎, 板垣奈穂, 古閑一憲, 白谷正治

    第7回プラズマエレクトロニクスインキュベーションホール  2013.9 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:国立中央青少年交流の家, 静岡   Country:Japan  

  • Crystallinity Control of Sputtered ZnO:Al Transparent Conducting Films by Utilizing Buffer Layers Fabricated via Nitrogen Mediated Crystallization International conference

    N. Itagaki, K. Oshikawa, I. Suhariadi, K. Matsushima, D. Yamashita, H. Seo, G. Uchida, K. Koga, M. Shiratani

    Solid State Devices and Materials 2013 (SSDM)  2013.9 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hilton Fukuoka Sea Hawk   Country:Japan  

  • Photocarrier generation in quantum-dot sensitized solar cells using Ge nanoparticle films International conference

    G. Uchida, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Solid State Devices and Materials 2013 (SSDM)  2013.9 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hilton Fukuoka Sea Hawk   Country:Japan  

  • Plasma Etching of Single Fine Particle Trapped By Optical Tweezers

    M. Shiratani, D. Yamashita, K. Koga, K. Kamataki, N. Itagaki, G. Uchida

    The 26th Symposium on Plasma Science for Materials (SPSM-26)  2013.9 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Centennial Hall Kyushu University School of Medicine   Country:Japan  

  • Time evolution of growth enhancement effects of radish sprouts due to atmospheric pressureplasma irradiation

    T. Sarinont, S. Kitazaki, K. Koga, G. Uchida, M. Shiratani, N. Hayashi

    The 26th Symposium on Plasma Science for Materials (SPSM-26)  2013.9 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Centennial Hall Kyushu University School of Medicine   Country:Japan  

  • Control of the area irradiated by the sheet-type plasma jet in atmospheric pressure

    T. Kawasaki, M. Sakai, G. Uchida, K. Koga, M. Shiratani

    The 26th Symposium on Plasma Science for Materials (SPSM-26)  2013.9 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Centennial Hall Kyushu University School of Medicine   Country:Japan  

  • Time Evolution of Ar Emission Intensities of Ar + H2 + Toluene Plasmas in H-assistedPlasma CVD Reactor

    X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani

    The 26th Symposium on Plasma Science for Materials (SPSM-26)  2013.9 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Centennial Hall Kyushu University School of Medicine   Country:Japan  

  • Production of SiC nanoparticles for Li-ion battery applications by using a high pressuremulti-hollow discharge plasma CVD

    G. Uchida, D. Ichida, Y. Kanemitsu, H. Seo, K. Kamataki, N. Itagaki, K. Koga, T. Ishihara, M. Shiratani

    The 26th Symposium on Plasma Science for Materials (SPSM-26)  2013.9 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Centennial Hall Kyushu University School of Medicine   Country:Japan  

  • Effects of RF power on structure of Ge nanoparticle films deposited by high-pressure RFmagnetron sputtering method

    D. Ichida, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    The 26th Symposium on Plasma Science for Materials (SPSM-26)  2013.9 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Centennial Hall Kyushu University School of Medicine   Country:Japan  

  • Effects of H2 plasma etching on carbon nanoparticles formed due to interactions betweengraphite target and H2 Plasmas

    M. Tateishi, K. Koga, K. Kamataki, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, the LHD Experimental Group

    The 26th Symposium on Plasma Science for Materials (SPSM-26)  2013.9 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Centennial Hall Kyushu University School of Medicine   Country:Japan  

  • Effects of filter gap of cluster eliminating filter on cluster eliminating efficiency

    Y. Hashimoto, S. Toko, Y. Kim, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    The 26th Symposium on Plasma Science for Materials (SPSM-26)  2013.9 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Centennial Hall Kyushu University School of Medicine   Country:Japan  

  • Dependence of Volume Fraction of Si Clusters in Films on Amplitude Modulation Frequencyin Multi-Hollow Discharge Plasma CVD Method

    S. Toko, Y. Kim, Y. Hashimoto, Y. Kanemitu, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    The 26th Symposium on Plasma Science for Materials (SPSM-26)  2013.9 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Centennial Hall Kyushu University School of Medicine   Country:Japan  

  • Amplitude modulation frequency dependence of nanoparticle amount in plasmas

    Y. Morita, S. Iwashita, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    The 26th Symposium on Plasma Science for Materials (SPSM-26)  2013.9 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Centennial Hall Kyushu University School of Medicine   Country:Japan  

  • Synthesis and Characterization of Oxynitride Semiconductor ZnInON with Tunable Bandgap

    N. Itagaki, K. Matsushima, D. Yamashita, H. Seo, K. Kamataki, G.Uchida, K. Koga, M. Shiratani

    The 26th Symposium on Plasma Science for Materials (SPSM-26)  2013.9 

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    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Centennial Hall Kyushu University School of Medicine   Country:Japan  

  • Combinatorial Method of Plasma Irradiation to Seeds of Raphanus sativus L. International conference

    M. Shiratani, S. Kitazaki, T. Sarinont, K. Koga, G. Uchida, N. Hayashi

    2013 JSAP-MRS Joint Symposia  2013.9 

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    Event date: 2013.9

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Doshisha University   Country:Japan  

  • Effects of Atmospheric Air Plasma Irradiation on pH of Deionized Water International conference

    T. Sarinont, S. Kitazaki, K. Koga, G. Uchida, M. Shiratani and N. Hayashi

    2013 JSAP-MRS Joint Symposia  2013.9 

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    Event date: 2013.9

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Doshisha University   Country:Japan  

  • マルチホロー放電プラズマからのクラスター流出量のガス流速依存性

    都甲将, 金淵元, 橋本優史, 金光善徳, 徐鉉雄, 内田儀一郎, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    第74回応用物理学会秋季学術講演会  2013.9 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学   Country:Japan  

  • RFマグネトロンスパッタリング法による高移動度ワイドギャップ半導体ZnInON膜の作製-Ar分圧依存性-

    松島宏一, 清水僚太, 山下大輔, 鎌滝晋礼, 徐鉉雄, 内田儀一郎, 古閑一憲, 白谷正治, 板垣奈穂

    第74回応用物理学会秋季学術講演会  2013.9 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学   Country:Japan  

  • シラン放電プラズマ初期のクラスター発生と膜への取り込み

    橋本優史, 都甲将, 金淵元, 山下大輔, 内田儀一郎, 徐鉉雄, 板垣奈穂, 鎌滝晋礼, 古閑一憲, 白谷正治

    第74回応用物理学会秋季学術講演会  2013.9 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学   Country:Japan  

  • RFスパッタリング法を用いた結晶Geナノ粒子膜の堆積

    市田大樹, 内田儀一郎, 徐鉉雄, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    第74回応用物理学会秋季学術講演会  2013.9 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学   Country:Japan  

  • 反応性プラズマにおけるナノ粒子量空間分布の変調周波数依存性

    森田康彦, 岩下伸也, 山下大輔, 内田儀一郎, 鎌滝晋礼, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    第74回応用物理学会秋季学術講演会  2013.9 

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    Event date: 2013.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:同志社大学   Country:Japan  

  • Performance Dependence of Si Quantum Dot-Sensitized Solar Cells on Counter Electrode International conference

    H. Seo, D. Ichida, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    2013 JSAP-MRS Joint Symposia  2013.9 

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    Event date: 2013.9

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Doshisha University   Country:Japan  

  • Band-Gap Engineering of ZnO Based Semiconductors Deposited by Sputtering International conference

    N. Itagaki, K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani

    2013 JSAP-MRS Joint Symposia  2013.9 

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    Event date: 2013.9

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Doshisha University   Country:Japan  

  • Contribution of ionic deposition precursors to Si thin film deposition International conference

    S. Toko, Y. Kim, Y. Hashimoto, Y. Kanemitu, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, and M. Shiratani

    Dry Process Symposium 2013  2013.8 

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    Event date: 2013.8

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Ramada Plaza Jeju Hotel   Country:Korea, Republic of  

  • Effects of amplitude modulation of rf discharge voltage on silane plasmas in initial phase International conference

    Y. Kim, S. Toko, Y. Hashimoto, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga and M. Shiratani

    Dry Process Symposium 2013  2013.8 

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    Event date: 2013.8

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Ramada Plaza Jeju Hotel, Jeju   Country:Korea, Republic of  

  • Safety Issues on Plasma Life Sicences (Invited) Invited International conference

    M. Shiratani, K. Koga, A. Tanaka, M. Hirata, N. Hayashi, N. Itagaki, G. Uchida

    The 9th Asian-European International Conference on Plasma Surface Engineering (AEPSE2013)  2013.8 

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    Event date: 2013.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ramada Plaza Jeju Hotel   Country:Korea, Republic of  

  • Characteristics of GeSn nanoparticle films deposition by high-pressure rf magnetron sputtering method International conference

    D. Ichida, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    The 9th Asian-European International Conference on Plasma Surface Engineering (AEPSE2013)  2013.8 

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    Event date: 2013.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ramada Plaza Jeju Hotel   Country:Korea, Republic of  

  • Performance Enhancement of Si Quantum Dot-sensitized Solar Cell Using vanadium Doped TiO2 International conference

    H. Seo, D. Ichida, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, S. Nam, J. Boo

    The 9th Asian-European International Conference on Plasma Surface Engineering (AEPSE2013)  2013.8 

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    Event date: 2013.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ramada Plaza Jeju Hotel   Country:Korea, Republic of  

  • Time evolution of spatial profile of nanoparticle amount in reactive plasmas International conference

    Y. Morita, S. Iwashita, D. Yamashita, G. Uchida, K. Kamataki, H. Seo, N. Itagaki, K. Koga and M. Shiratani

    The 9th Asian-European International Conference on Plasma Surface Engineering (AEPSE2013)  2013.8 

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    Event date: 2013.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ramada Plaza Jeju Hotel   Country:Korea, Republic of  

  • Sputtering Fabrication of ZnInON films with Tunable Bandgap for Heterojunction Solar Cells International conference

    R. Shimizu, K. Matsushima, Tadashi Hirose, K. Kuwahara, D. Yamashita, G. Uchida, H. Seo, K. Koga, M. Shiratani, and N. Itagaki

    The 9th Asian-European International Conference on Plasma Surface Engineering (AEPSE2013)  2013.8 

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    Event date: 2013.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ramada Plaza Jeju Hotel   Country:Korea, Republic of  

  • Effects of atmospheric air plasma treatments of seeds on plant growth International conference

    T. Sarinont, S. Kitazaki, K. Koga, G. Uchida, N. Itagaki, H. Seo, M. Shiratani and N. Hayashi

    The 9th Asian-European International Conference on Plasma Surface Engineering (AEPSE2013)  2013.8 

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    Event date: 2013.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ramada Plaza Jeju Hotel   Country:Korea, Republic of  

  • Deposition of Ge nanoparticle films by high-pressure rf magnetron sputtering method for quantum dot solar cells International conference

    G. Uchida, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, and M. Shiratani

    The 9th Asian-European International Conference on Plasma Surface Engineering (AEPSE2013)  2013.8 

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    Event date: 2013.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ramada Plaza Jeju Hotel   Country:Korea, Republic of  

  • Tuning Size Distribution of Nanoparticles Formed in Reactive Plasmas using Plasma Parameter Modulation International conference

    M. Shiratani, Y. Morita, S. Iwashita, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, and K. Koga

    The 9th Asian-European International Conference on Plasma Surface Engineering (AEPSE2013)  2013.8 

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    Event date: 2013.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ramada Plaza Jeju Hotel   Country:Korea, Republic of  

  • Coreshell nanoparticles generated by plasma CVD and their applications to Li ion batteries International conference

    M. Shiratani, Y. Morita, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, and K. Koga

    21st International Symposium on Plasma Chemistry (ISPC21)  2013.8 

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    Event date: 2013.8

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Cairns   Country:Australia  

  • Observation of nanoparticle growth process using high speed camera International conference

    Y. Morita, K. Koga, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, D. Yamashita and M. Shiratani

    21st International Symposium on Plasma Chemistry (ISPC21)  2013.8 

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    Event date: 2013.8

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Cairns   Country:Australia  

  • Correlation between nanoparticle growth and plasma parameters in low pressure reactive VHF discharge plasmas International conference

    M. Shiratani, Y. Morita, K. Kamataki, H. Seo, G. Uchida, N. Itagaki, K. Koga

    The 12th Asia Pacific Physics Conference (APPC12)  2013.7 

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    Event date: 2013.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Makuhari, Chiba   Country:Japan  

  • Deposition of carbon films on PMMA using H-assisted plasma CVD International conference

    X. Dong, R. Torigoe, K. Koga, G. Uchida, M. Shiratani, Y. Setsuhara, K. Takenaka, M. Sekine, M. Hori

    The 12th Asia Pacific Physics Conference (APPC12)  2013.7 

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    Event date: 2013.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Makuhari, Chiba   Country:Japan  

  • Correlation between Species Generated by Atmospheric Pressure Air Plasmas and Growth Enhancement of Oryza Sativa International conference

    T. Sarinont, S. Kitazaki, K. Koga, G.u Uchida, M. Shiratani, T. Murakami, N. Hayashi

    The 12th Asia Pacific Physics Conference (APPC12)  2013.7 

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    Event date: 2013.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Makuhari, Chiba   Country:Japan  

  • Study on the crystal growth mechanism of ZnO films fabricated via nitrogen mediated crystallization International conference

    I. Suhariadi, K. Oshikawa, H. Seo, D. Yamashita, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, N. Itagaki

    The 12th Asia Pacific Physics Conference (APPC12)  2013.7 

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    Event date: 2013.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Makuhari, Chiba   Country:Japan  

  • Effects of plasma incident angle of dust production due to interactions between hydrogen plasmas and carbon wall International conference

    M. Tateishi, K. Koga, G. Uchida, K. Kamataki, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, the LHD Experimental Group d, S. Bornholdte, H. Kersten

    The 12th Asia Pacific Physics Conference (APPC12)  2013.7 

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    Event date: 2013.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Makuhari, Chiba   Country:Japan  

  • Effects of grid DC bias on incorporation of Si clusters into amorphous silicon films by multi-hollow discharge plasma CVD International conference

    S. Toko, Y. Kim, Y. Hashimoto, Y. Kanemitu, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, and M. Shiratani

    The 12th Asia Pacific Physics Conference (APPC12)  2013.7 

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    Event date: 2013.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Makuhari, Chiba   Country:Japan  

  • Transport of nanoparticles produced in reactive plasmas using a positively-biased collector International conference

    Y. Morita, K. Koga, G. Uchida, K. Kamataki, D. Yamashita, H. Seo, N. Itagaki, and M. Shiratani

    The 12th Asia Pacific Physics Conference (APPC12)  2013.7 

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    Event date: 2013.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Makuhari, Chiba   Country:Japan  

  • Infrared Laser Manipulation of Single Fine Particle Levitated at Plasma/Sheath Boundary International conference

    D. Yamashita, K. Koga, G. Uchida, K. Kamataki, N. Itagaki, and M. Shiratani

    The 12th Asia Pacific Physics Conference (APPC12)  2013.7 

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    Event date: 2013.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Makuhari, Chiba   Country:Japan  

  • Effects of H2 gas addition on structure of Ge nanoparticle films deposited by high-pressure rf magnetron sputtering method International conference

    D. Ichida, G. Uchida, H. Seo, K. Kamatakia, N. Itagaki, K. Koga, M. Shiratani

    The 12th Asia Pacific Physics Conference (APPC12)  2013.7 

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    Event date: 2013.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Makuhari, Chiba   Country:Japan  

  • Combinatorial plasma CVD of Si nanoparticle composite films for band gap control International conference

    Y. Kanemitsu, G. Uchida, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, and M. Shiratani

    The 12th Asia Pacific Physics Conference (APPC12)  2013.7 

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    Event date: 2013.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Makuhari, Chiba   Country:Japan  

  • Sputter Deposition of Single Crystal ZnO Films on 18&#37; Lattice mismatched c-Al2O3 Substrates via Nitrogen Mediated Crystallization International conference

    N. Itagaki, K. Kuwahara, I. Suhariadi, K. Oshikawa, K. Matsushima, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, and M. Shiratani

    International Symposium on Sputtering and Plasma Processes (ISSP2013)  2013.7 

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    Event date: 2013.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto Research Park   Country:Japan  

  • Layer by layer deposition of ZnO buffer layers fabricated via nitrogen mediated crystallization for ZnO:Al transparent conducting oxide International conference

    I. Suhariadi, K. Oshikawa, K. Kuwahara, K. Matsushima, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, N. Itagaki

    International Symposium on Sputtering and Plasma Processes (ISSP2013)  2013.7 

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    Event date: 2013.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto Research Park   Country:Japan  

  • Combinatorial Approach to Plasma Biosciences (Invited) Invited International conference

    M. Shiratani, S. Kitazaki, T. Sarinont, K. Koga, G. Uchida, and N. Hayashi

    2013 International Forum on Functional Materials (IFFM2013)  2013.6 

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    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ramada Plaza Jeju Hotel   Country:Korea, Republic of  

  • Analysis on the paint-type Si quantum dot-sensitized solar cells International conference

    H. Seo, Y. Wang, D. Ichida, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    International Symposium on Green Manufacturing and Applecations  2013.6 

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    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hawai   Country:Other  

  • Control of nanostructure of plasma CVD Si thin films (Invited) Invited International conference

    M. Shiratani, K. Koga, G. Uchida, N. Itagaki, H. Seo, and K. Kamataki

    Japan-Australia Workshop on Gaseous Electronics and Its Applications (JAWS25)  2013.6 

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    Event date: 2013.6

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Australian National University   Country:Australia  

  • Advanced plasma sources and processes for energy harvesting devices (Invited) Invited International conference

    M. Shiratani, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, and K. Koga

    The 17th International Workshop on Advanced Plasma Processing and Diagnostics  2013.5 

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    Event date: 2013.5

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Sungkyunkwan University   Country:Korea, Republic of  

  • Advance in quantum dot-sensitized solar cells using group IV semiconductor nano-particles (Invited) Invited International conference

    H. Seo, D. Ichida, S. Hashimoto, G. Uchida, K. Kamataki, N. Itagaki, K. Koga and M. Shiratani

    The 17th International Workshop on Advanced Plasma Processing and Diagnostics  2013.5 

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    Event date: 2013.5

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Sungkyunkwan University   Country:Korea, Republic of  

  • Volume fraction of clusters in Si thin films in initial deposition phase of plasma CVD International conference

    S. Toko, Y. Kim, Y. Hashimoto, Y. Kanemitu, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, and M. Shiratani

    The 17th International Workshop on Advanced Plasma Processing and Diagnostics  2013.5 

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    Event date: 2013.5

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Sungkyunkwan University   Country:Korea, Republic of  

  • Dust flux control in high density hydrogen plasmas using DC biased substrates International conference

    M. Tateishi, K. Koga, G. Uchida, K. Kamataki, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, the LHD Experimental Group

    The 17th International Workshop on Advanced Plasma Processing and Diagnostics  2013.5 

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    Event date: 2013.5

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Sungkyunkwan University   Country:Korea, Republic of  

  • 高効率太陽電池の実現に向けた新規酸窒化物半導体ZnInONのバンドギャップエンジニアリング

    板垣奈穂, 松島宏一, 桑原和成, 山下大輔, 徐鉉雄, 鎌滝晋礼, 内田儀一郎, 古閑一憲, 白谷正治

    第10回 「次世代の太陽光発電システム」シンポジウム  2013.5 

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    Event date: 2013.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:石川県立音楽堂   Country:Japan  

  • Nanostructure of plasma CVD films containing nanoparticles (Invited) Invited International conference

    M. Shiratani, K. Koga, G. Uchida, N. Itagaki, H. Seo, K. Kamataki

    International Conference on Metallurgical Coatings and Thin Films (ICMCTF 2013)  2013.4 

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    Event date: 2013.4 - 2013.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:San Diego, CA   Country:Other  

  • スパッタ法によるC面サファイア基板上への原子平坦ZnO薄膜の作製

    板垣奈穂, 桑原和成, 山下大輔, 徐鉉雄, 鎌滝晋礼, 内田儀一郎, 古閑一憲, 白谷正治

    2013年第60回応用物理学会春季学術講演会  2013.3 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  • 大気圧プラズマジェットによる殺菌への供給ガスの影響

    川崎敏之, 佐藤京祐, 森崎久志, 馬塲啓, 梅田翔一, 坂井美穂, 内田儀一郎, 古閑一憲, 白谷正治

    2013年第60回応用物理学会春季学術講演会  2013.3 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  • RFマグネトロンスパッタリング法による高移動度ワイドギャップ半導体ZnInONの作製

    松島宏一, 桑原和成, 廣瀬忠史, 山下大輔, 鎌滝晋礼, 徐鉉雄, 内田儀一郎, 古閑一憲, 白谷正治, 板垣奈穂

    2013年第60回応用物理学会春季学術講演会  2013.3 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  • Siナノ粒子膜を用いたSi/PEDOT:PSS太陽電池の特性評価

    内田儀一郎, 王玉亭, 市田大樹, 徐鉉雄, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    2013年第60回応用物理学会春季学術講演会  2013.3 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  • Silicon cluster volume fraction of silicon thin films prepared by multi-hollow plasma discharge CVD

    金淵元, K. Hatozaki, Y. Hashimoto, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    2013年第60回応用物理学会春季学術講演会  2013.3 

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    Event date: 2013.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  • Control of distribution and transport of μm-sized dust particles in a CCRF discharge via the Electrical Asymmetry Effect International conference

    S. Iwashita, E. Schüngel, J. Schulze, P. Hartmann, Z. Donkó, G. Uchida, K. Koga, M. Shiratani, U. Czarnetzki

    Jena 2013  2013.2 

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    Event date: 2013.2 - 2013.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Friedrich-Schiller-University of Jena   Country:Germany  

  • Fluctuation in Plasma Processes (Invited) Invited International conference

    M. Shiratani, K. Kamataki, Y. Morita, K. Koga, G. Uchida, N. Itagaki, H. Seo

    6th International Conference on Plasma Nanotechnology and Science (IC-PLANTS 2013)  2013.2 

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    Event date: 2013.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:下呂交流会館   Country:Japan  

  • Growth promotion of Raphanus sativus L. using a combinatorialplasma irradiation method International conference

    S. Kitazaki, T. Sarinont, K. Koga, M.Shiratani, N. Hayashi

    The 6th International Conference on Plasma Nanotechnology and Science (IC-PLANTS 2013)  2013.2 

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    Event date: 2013.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:下呂交流会館   Country:Japan  

  • Dust and Dust Manipulation in Capacitively Coupled Plasmas (Invited) Invited International conference

    U. Czarnetzki, S. Iwashita, E. Schüngel, S. Mohr, J. Schulze, P. Hartman, Z. Donkó, G. Uchida, K. Koga, M. Shiratani

    The 6th International Conference on Plasma Nanotechnology and Science (IC-PLANTS 2013)  2013.2 

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    Event date: 2013.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:下呂交流会館   Country:Japan  

  • Sputter deposition of zinc-indium oxynitride semiconductors with narrow bandgap for excitonic transistors International conference

    N. Itagaki, K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)  2013.2 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Naogya University   Country:Japan  

  • Growth Enhancement of Plants using Atmospheric Pressure Dielectric Barrier Discharge Plasmas International conference

    T. Sarinont, S. Kitazaki, G. Uchida, K. Koga, M. Shiratani, N. Hayashi

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)  2013.1 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Naogya University   Country:Japan  

  • Antioxidative activity of plant and regulation of plant growth induced by oxygen radicals International conference

    N. Hayashi, S. Kitazaki, K. Koga, M. Shiratani

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)  2013.1 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Naogya University   Country:Japan  

  • Substrate temperature dependence of silcion cluster volume fraction in silicon thin films measured with quartz crystal microbalances International conference

    Y. Kim, K. Hatozaki, Y. Hashimoto, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)  2013.1 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Naogya University   Country:Japan  

  • Spatio-temporal structure of growth of nano-particles with without amplitude modulation in reactive plasmas International conference

    K. Kamataki, Y. Morita, K. Koga, G. Uchida, N. Itagaki, H. Seo, M. Shiratani

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)  2013.1 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Naogya University   Country:Japan  

  • Dependence of performance of p-i-n a-Si:H solar cells using stable a-Si:H films on distance between discahrges and substrate International conference

    K. Hatozaki, Y. Hashimoto, D. Yamashita, H. Seo, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)  2013.1 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Naogya University   Country:Japan  

  • Time evolution of nanoparticle size in reactive plasmas: comparison between theory and experiments International conference

    M. Shiratani, K. Kamataki, Y. Morita, G. Uchida, H. Seo, N. Itagaki, K. Koga

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)  2013.1 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Naogya University   Country:Japan  

  • The improvement on the electron transfer of dye-sensitized solar cell using vanadium doped TiO2 International conference

    H. Seo, Y. Wang, D. Ichida, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Sanghoon Nam and Jin-Hyo Boo

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)  2013.2 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Naogya University   Country:Japan  

  • Properties and Performance of C-Si/Si QDs/organic Heterojunction Solar Cells International conference

    Y. Wang, D. Ichida, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)  2013.2 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Naogya University   Country:Japan  

  • Evaluation of etching effects due to H+ ions on dust transport using local bias potential International conference

    K. Nishiyama, M. Tateishi, Y. Morita, D. Yamashita, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, and The LHD Experimental Group

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)  2013.2 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Naogya University   Country:Japan  

  • Energy conversion efficincy of Si nanoparticle/PEDOT:PSS qunatum-dot solar cells International conference

    G. Uchida, Y. Wang, H. Seo, D. Ichida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)  2013.2 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Naogya University   Country:Japan  

  • Effects of Nitrogen on Crystal Growth of Sputter-Deposited ZnO Films for Transparent Conducting Oxide International conference

    I. Suhariadi, K. Oshikawa, K. Kuwahara, K. Matsushima, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, N. Itagaki

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)  2013.2 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Naogya University   Country:Japan  

  • Effects of deposition temperature on properties of epitaxial ZnInON films for solar cells International conference

    K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, K. Koga, M. Shiratani, and N. Itagaki

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)  2013.2 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Naogya University   Country:Japan  

  • Dependence of Voc of a-Si:H solar cells on distance between discharge and substrate International conference

    Y. Hashimoto, K. Hatozaki, D. Yamashita, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)  2013.2 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Naogya University   Country:Japan  

  • Cycle characteristics of lithium ion batteries using Si/SiC core-shell nanoparticle anode International conference

    Y. Morita, K. Kamataki, G. Uchida, Y. Kim, H. Seo, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani, H. Nagano, T. Ishihara

    5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)  2013.2 

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    Event date: 2013.1 - 2013.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Naogya University   Country:Japan  

  • Tuning nanostructures of plasma CVD films (Plenary) Invited International conference

    M. Shiratani, K. Koga, G. Uchida, N. Itagaki, H. Seo, K. Kamataki

    The 16th International Workshop on Advanced Plasma Processing and Diagnostics  2013.1 

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    Event date: 2013.1

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:自然科学研究機構 岡崎コンファレンスセンター   Country:Japan  

  • Fabrication of epitaxial ZnInON films for MQW solar cells by RF magnetron sputtering International conference

    K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    The 16th International Workshop on Advanced Plasma Processing and Diagnostics  2013.1 

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    Event date: 2013.1

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:自然科学研究機構 岡崎コンファレンスセンター   Country:Japan  

  • Deposition rate dependence of silicon cluster volume fraction in silicon thin films deposited by multi-hollow plasma discharge CVD International conference

    Y. Kim, K. Hatozaki, Y. Hashimoto, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    The 16th International Workshop on Advanced Plasma Processing and Diagnostics  2013.1 

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    Event date: 2013.1

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:自然科学研究機構 岡崎コンファレンスセンター   Country:Japan  

  • The fabrication of paint-type Si quantum dot-sensitized solar cells and ZnS post-treatment (Invited) Invited International conference

    H. Seo, Y. wang, D. Ichida, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    The 16th International Workshop on Advanced Plasma Processing and Diagnostics  2013.1 

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    Event date: 2013.1

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:自然科学研究機構 岡崎コンファレンスセンター   Country:Japan  

  • Sputter deposition of atomically-flat ZnO films on lattice mismatched substrates via nitrogen mediated crystallization (Invited) Invited International conference

    N. Itagaki, K. Kuwahara, I. Suhariadi, K. Oshikawa, K. Matsushima, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani

    The 16th International Workshop on Advanced Plasma Processing and Diagnostics  2013.1 

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    Event date: 2013.1

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:自然科学研究機構 岡崎コンファレンスセンター   Country:Japan  

  • 反応性プラズマ中の微粒子成長速度の時空間相関

    白谷正治, 鎌滝晋礼, 森田康彦, 古閑一憲, 内田儀一郎, 板垣奈穂, 徐鉉雄

    第30回プラズマプロセシング研究会(SPP-30)  2013.1 

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    Event date: 2013.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:アクトシティ浜松・研修交流センター   Country:Japan  

  • 低圧プラズマ照射による稲の成長促進

    T. Sarinont, 北崎 訓, 内田 儀一郎, 古閑 一憲, 白谷 正治, 林 信哉

    第30回プラズマプロセシング研究会(SPP-30)  2013.1 

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    Event date: 2013.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:アクトシティ浜松・研修交流センター   Country:Japan  

  • マルチホロー放電プラズマCVDで堆積したSiナノ粒子含有膜のバンドギャップ制御

    金光善徳, 内田儀一郎, 市田大樹, 王玉亭, 波戸崎浩介, 徐鉉雄, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    第30回プラズマプロセシング研究会(SPP-30)  2013.1 

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    Event date: 2013.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:アクトシティ浜松・研修交流センター   Country:Japan  

  • ダブルマルチホロープラズマCVDを用いたリチウムイン電池用SiCナノ粒子膜のコンビナトリアル生成

    森田康彦, 鎌滝晋礼, 内田儀一郎, 金淵元, 徐鉉雄, 山下大輔, 板垣奈穂, 古閑一憲, 白谷正治, 永野裕己, 石原達己

    第30回プラズマプロセシング研究会(SPP-30)  2013.1 

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    Event date: 2013.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:アクトシティ浜松・研修交流センター   Country:Japan  

  • Siナノ粒子/PEDOT:PSSを用いた量子ドット太陽電池の作製

    市田大樹, 王玉亭, 徐鉉雄, 内田儀一郎, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    第30回プラズマプロセシング研究会(SPP-30)  2013.1 

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    Event date: 2013.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:アクトシティ浜松・研修交流センター   Country:Japan  

  • Quantum yield of Si quantum dot solar cells using Si nanoparticles International conference

    G. Uchida, H. Seo, Y. Wang, D. Ichida, K. Koga, M. Shiratani

    第5回革新的太陽光発電国際シンポジウム  2013.1 

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    Event date: 2013.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:つくば国際会議場   Country:Japan  

  • Etching Effects of Hydrogen Ions on Dust Collection Using Local Bias Potential International conference

    K. Nishiyama, M. Tateishi, Y. Morita, D. Yamashita, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, the LHD Experimental Group

    2013 International Symposium on Information Science and Electrical Engineering  2013.1 

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    Event date: 2013.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:九州大学伊都キャンパス稲盛会館   Country:Japan  

  • 反応性プラズマとナノ構造の相互作用の長距離相関モデル

    白谷正治, 鎌滝晋礼, 森田康彦, 古閑一憲, 内田儀一郎, 板垣奈穂, 徐鉉雄

    プラズマ・核融合学会 九州・沖縄・山口支部第16回支部大会  2012.12 

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    Event date: 2012.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • 反応性プラズマ中でのナノ粒子成長の時空間分布

    森田康彦, 鎌滝晋礼, 内田儀一郎, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会 九州・沖縄・山口支部第16回支部大会  2012.12 

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    Event date: 2012.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • 大型ヘリカル装置の主放電時に発生するダストの局所バイアス電圧を用いた除去

    西山雄士, 立石瑞樹, 森田康彦, 山下大輔, 鎌滝晋礼, 内田儀一郎, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治, 芦川直子, 増崎貴, 西村清彦, 相良明男, LHD実験グループ

    プラズマ・核融合学会 九州・沖縄・山口支部第16回支部大会  2012.12 

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    Event date: 2012.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • マルチホロー放電プラズマCVD法を用いたSiナノ粒子膜の堆積と有機・無機ハイブリッド型太陽電池への応用

    市田大樹, 王玉亭, 徐鉉雄, 内田儀一郎, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会 九州・沖縄・山口支部第16回支部大会  2012.12 

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    Event date: 2012.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • マルチホロー放電プラズマCVDで堆積したSiナノ粒子含有膜の光学特性

    金光善徳, 内田儀一郎, 市田大樹, 王玉亭, 波戸崎浩介, 徐鉉雄, 鎌滝普礼, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会 九州・沖縄・山口支部第16回支部大会  2012.12 

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    Event date: 2012.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • スパッタリング法による高効率量子井戸型太陽電池のための狭バンドギャップ酸窒化物半導体の作製

    廣瀬忠史, 松島宏一, 桑原和成, 山下大輔, 徐鉉雄, 鎌滝晋礼, 内田儀一郎, 古閑一憲, 白谷正治, 板垣奈穂

    プラズマ・核融合学会 九州・沖縄・山口支部第16回支部大会  2012.12 

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    Event date: 2012.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • SiH4マルチホロー放電プラズマの発光分光計測

    橋本優史, 波戸崎浩介, 金淵元, 山下大輔, 内田儀一郎, 徐鉉雄, 板垣奈穂, 鎌滝晋礼, 古閑一憲, 白谷正治

    プラズマ・核融合学会 九州・沖縄・山口支部第16回支部大会  2012.12 

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    Event date: 2012.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • Electrochemical impedance analysis on the additional layers for the enhancement on the performance of dye-sensitized solar cell International conference

    H. Seo, Y. Wang, D. Ichida, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    10th International Conference on Nano-Molecular Electronics  2012.12 

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    Event date: 2012.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Awaji Yumebutai International Conference Center   Country:Japan  

  • Application of Si nanoparticles to energy devices: quantum-dot solar cells and Li ion batteris (Invited) Invited International conference

    G. Uchida, K. Kamataki, H. Seo, N. Itagaki, K. Koga, T. Ishihara, and M. Shiratani

    The 69th IUVSTA Workshop  2012.12 

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    Event date: 2012.12

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Mountain Krvavec, Cerklje   Country:Slovenia  

  • A simplified model of a relationship between plasma fluctuation and size distribution of nanoparticles formed in reactive plasmas

    M. Shiratani, Y. Morita, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, K. Koga

    第13回微粒子プラズマ研究会  2012.12 

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    Event date: 2012.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:核融合科学研究所   Country:Japan  

  • Transport control of dust particles in a capacitively coupled discharge via the Electrical Asymmetry Effect

    S. Iwashita, E. Sch¨unge, J. Schulze, P. Hartmann, G.Uchida, K. Koga, M. Shiratani, Z. Donk'o, U. Czarnetzki

    第13回微粒子プラズマ研究会  2012.12 

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    Event date: 2012.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:核融合科学研究所   Country:Japan  

  • SiC/Si nanoparticle anode of lithium ion batteries fabricated using double multi-hollow plasma CVD

    Y. Morita, K. Kamataki, G. Uchida, Y. Kim, H. Seo, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani, H. Nagano, T. Ishihara

    第13回微粒子プラズマ研究会  2012.12 

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    Event date: 2012.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:核融合科学研究所   Country:Japan  

  • Dust particle formation due to interaction between deuterium helicon plasmas and graphite wall

    M. Tateishi, S. Iwashita, K. Nishiyama, Y. Morita, D. Yamashita, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, and the LHD Experimental Group

    第13回微粒子プラズマ研究会  2012.12 

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    Event date: 2012.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:核融合科学研究所   Country:Japan  

  • Dust Collection on DC Biased Substrates during Glow Discharges in the Large Helical Device

    K. Nishiyama, M. Tateishi, Y. Morita, D. Yamashita, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagar2, and the LHD Experimental Group

    第13回微粒子プラズマ研究会  2012.12 

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    Event date: 2012.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:核融合科学研究所   Country:Japan  

  • Si ナノ粒子/PEDOT:PSS 量子ドット太陽電池のエネルギー変換効率

    市田大樹, 王玉亭, 徐鉉雄, 内田儀一郎, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    平成24年度応用物理学会九州支部学術講演会  2012.12 

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    Event date: 2012.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:佐賀大学   Country:Japan  

  • 低温スパッタリング法による高効率量子井戸型太陽電池のための新規酸窒化物半導体ZnInONの形成

    松島宏一, 桑原和成, 廣瀬忠史, 山下大輔, 鎌滝晋礼, 徐鉉雄, 内田儀一郎, 古閑一憲, 白谷正治, 板垣奈穂

    平成24年度応用物理学会九州支部学術講演会  2012.12 

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    Event date: 2012.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:佐賀大学   Country:Japan  

  • 窒素添加結晶化バッファー層を用いた低抵抗ZnO:Al薄膜の作製: バッファー層形成時における酸素供給量の効果

    押川晃一郎, I. Suhariadi, 桑原和成, 山下 大輔, 徐 鉉雄, 鎌滝晋礼, 内田儀一郎, 古閑一憲, 白谷正治, 板垣奈穂

    平成24年度応用物理学会九州支部学術講演会  2012.12 

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    Event date: 2012.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:佐賀大学   Country:Japan  

  • ヘリコンプラズマ装置における捕集基板上ダストへのエッチング効果の考察

    立石瑞樹, 西山雄士, 森田康彦, 山下大輔, 鎌滝晋礼, 内田儀一郎, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治, 芦川直子, 増崎貴, 西村清彦, 相良明男, LHD実験グループ

    平成24年度応用物理学会九州支部学術講演会  2012.12 

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    Event date: 2012.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:佐賀大学   Country:Japan  

  • コンビナトリアルプラズマ照射による植物の成長促進

    白谷正治, 北﨑訓, 古閑一憲, 林信哉

    プラズマ・核融合学会 第29回年会  2012.11 

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    Event date: 2012.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:春日クローバープラザ   Country:Japan  

  • 局所バイアス電圧印加基板で捕集したカーボンダスト量に対する水素プラズマエッチングの効果

    立石瑞樹, 西山雄士, 森田康彦, 山下大輔, 鎌滝晋礼, 内田儀一郎, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治, 芦川直子, 増崎貴, 西村清彦, 相良明男, LHD実験グループ

    プラズマ・核融合学会 第29回年会  2012.11 

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    Event date: 2012.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:春日クローバープラザ   Country:Japan  

  • 放電電力変調反応性プラズマにおけるナノ粒子成長の時空間構造の観測

    鎌滝晋礼, 森田康彦, 古閑一憲, 内田儀一郎, 板垣奈穂, 山下大輔, 白谷正治

    プラズマ・核融合学会 第29回年会  2012.11 

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    Event date: 2012.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:春日クローバープラザ   Country:Japan  

  • ダイバータシミュレータで発生したカーボンダストの生成と輸送の放電電力の効果

    西山雄士, 森田康彦, 山下大輔, 鎌滝晋礼, 内田儀一郎, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治, 芦川直子, 増崎貴, 西村清彦, 相良明男, LHD実験グループ, S. Bornholdt, H. Kersten

    プラズマ・核融合学会 第29回年会  2012.11 

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    Event date: 2012.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:春日クローバープラザ   Country:Japan  

  • Epitaxial Growth of ZnO Based Semiconductors via Impurity-Additive Mediated Crysallization International conference

    N. Itagaki, K. Kuwahara, K. Matsushima, T. Hirose, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani

    2012 MRS Fall Meeting  2012.11 

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    Event date: 2012.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hynes Convention Center   Country:Other  

  • Sputter deposition of Epitaxial Zinc-Indium Oxynitride Films for Excitonic Transistors International conference

    N. Itagaki, K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani

    The 34th International Symposium on Dry Process  2012.11 

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    Event date: 2012.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:The University of Tokyo   Country:Japan  

  • Plant growth regulation and redox reactions in plants induced by oxygen radical generated by air plasma International conference

    N. Hayashi, S. Kitazaki, K. Koga, M. Shiratani

    The 34th International Symposium on Dry Process  2012.11 

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    Event date: 2012.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:The University of Tokyo   Country:Japan  

  • Growth promotion of Raphanus sativus L. and Oryza sativa using a combinatorial plasma irradiation method International conference

    S. Kitazaki, T. Sarinont, K. Koga, M. Shiratani, N. Hayashi

    The 34th International Symposium on Dry Process  2012.11 

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    Event date: 2012.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:The University of Tokyo   Country:Japan  

  • Performance enhancement of c-Si/organic heterojunction solar cells by using Si quantum dots International conference

    Y. Wang, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    The 34th International Symposium on Dry Process  2012.11 

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    Event date: 2012.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:The University of Tokyo   Country:Japan  

  • プラズマプロセスにおける揺らぎのダイナミックス

    鎌滝晋礼, 森田康彦, 古閑一憲, 内田儀一郎, 板垣奈穂, H. Seo, 白谷正治

    九州山口プラズマ研究会、応物新領域研究会  2012.11 

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    Event date: 2012.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:由布院倶楽部   Country:Japan  

  • Long-range correlation of nanoparticle growth in in low pressure reactive VHF discharge plasmas International conference

    M. Shiratani, K. Kamataki, Y. Morita, H. Seo, N. Itagaki, G. Uchida, K. Koga

    54th Annual Meeting of the APS Division of Plasma Physics (DPP)  2012.10 

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    Event date: 2012.10 - 2012.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Rhode Island Convention Center, Rhode Island   Country:Other  

  • Epitaxial Growth of ZnInON Films for Piezo-Electric-Field Effect MQW Solar Cells International conference

    K. Matsushima, K. Kuwahara, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    AVS 59th International Symposium & Exhibition  2012.11 

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    Event date: 2012.10 - 2012.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tampa Convention Center, Florida   Country:Other  

  • Photocarrier generation in Si quantum-dot sensitized solar cells International conference

    G. Uchida, H. Seo, Y. Wang, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    AVS 59th International Symposium & Exhibition  2012.10 

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    Event date: 2012.10 - 2012.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tampa Convention Center, Florida   Country:Other  

  • Sputter deposition of atomically smooth ZnO films with buffer layers crystallized via nitrogen mediation International conference

    K. Kuwahara, D. Yamashita, G. Uchida, K. Kamataki, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    AVS 59th International Symposium & Exhibition  2012.11 

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    Event date: 2012.10 - 2012.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tampa Convention Center, Florida   Country:Other  

  • SiH4/H2 and CH4 multi-hollow discharge plasma CVD of SiC nano-composite anode for high charge-discharge capacity lithium ion batteries International conference

    Y. Morita, K. Kamataki, K. Kuwahara, D. Yamashita, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    AVS 59th International Symposium & Exhibition  2012.11 

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    Event date: 2012.10 - 2012.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tampa Convention Center, Florida   Country:Other  

  • Impacts of plasma fluctuation on growth of nanoparticles in low pressure reactive VHF discharge plasmas International conference

    M. Shiratani, K. Kamataki, Y. Morita, H. Seo, N. Itagaki, G. Uchida, K. Koga

    65th Annual Gaseous Electronics Conference (GEC)  2012.10 

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:The University of Texas   Country:Other  

  • Electrical asymmetry effect for controlling the transport of micrometer-sized particles in capacitively coupled plasmas International conference

    S. Iwashita, E. Schuengel, J. Schulze, G. Uchida, K. Koga, P. Hartmann, M. Shiratani, Z. Donko, U. Czarnetzki

    65th Annual Gaseous Electronics Conference (GEC)  2012.10 

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:The University of Texas   Country:Other  

  • Control of size distribution of nanoparticles produced in reactive plasmas International conference

    M. Shiratani, K. Kamataki, Y. Morita, K. Koga, G. Uchida, H. Seo, D. Yamashita, N. Itagaki

    Asia-Pacific Conference on Plasma Science and Technology (11th APCPST)  2012.10 

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:京都大学   Country:Japan  

  • Deposition of hard carbon films on the nitride pmma by plasma anisotropic CVD International conference

    R. Torigoe, T. Urakawa, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, Y. Setshuhara

    Asia-Pacific Conference on Plasma Science and Technology (11th APCPST)  2012.10 

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:京都大学   Country:Japan  

  • Investigation of sensitivity of yeast cell cycle to atmospheric pressure dielectric barrier discharge plasma irradiation International conference

    S. Kitazaki, T. Sarinont, K. Koga, M. Shiratani, N. Hayashi

    Asia-Pacific Conference on Plasma Science and Technology (11th APCPST)  2012.10 

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:京都大学   Country:Japan  

  • Germination and Seedling Growth using Atmospheric Pressure Dielectric Barrier Discharge International conference

    T. Sarinont, S. Kitazaki, K. Koga, M. Shiratani, N. Hayashi

    Asia-Pacific Conference on Plasma Science and Technology (11th APCPST)  2012.10 

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:京都大学   Country:Japan  

  • Temporal Evolution Of Number Density Of Ar Metastable Atoms In Dusty Plasmas International conference

    G. Uchida, N. Sadegh, K. Kamataki, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    Asia-Pacific Conference on Plasma Science and Technology (11th APCPST)  2012.10 

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:京都大学   Country:Japan  

  • Growth Control Of ZNO Nano-Rod With Various Seeds And Photovoltaic Application International conference

    H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Asia-Pacific Conference on Plasma Science and Technology (11th APCPST)  2012.10 

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:京都大学   Country:Japan  

  • Time evolution of diameter of laser trapped single dust particle in plasmas International conference

    D. Yamashita, K. Koga, S. Kitazaki, K. Kamataki, G. Uchida, N. Itagaki, M. Shiratani

    Asia-Pacific Conference on Plasma Science and Technology (11th APCPST)  2012.10 

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:京都大学   Country:Japan  

  • Temperature dependence of fill factor of a-Si:H Schottky cells International conference

    Y. Hashimoto, K. Hatozaki, Y. Kim, D. Yamashita, G. Uchida, H. Seo, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani

    Asia-Pacific Conference on Plasma Science and Technology (11th APCPST)  2012.10 

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:京都大学   Country:Japan  

  • Sputter deposition of epitaxial ZnO films: effects of O2 partial pressure International conference

    K. Kuwahara, K. Matsushima, D. Yamashita, G. Uchida, K. Kamataki, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    Asia-Pacific Conference on Plasma Science and Technology (11th APCPST)  2012.10 

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:京都大学   Country:Japan  

  • High capacity lithium ion batteries using SiC nanoparticles International conference

    Y. Morita, K. Kamataki, G. Uchida, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani, H. Nagano, T. Ishihara

    Asia-Pacific Conference on Plasma Science and Technology (11th APCPST)  2012.10 

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:京都大学   Country:Japan  

  • Fabrication of epitaxial ZnInON films for solar cell application by N2/Ar sputtering International conference

    K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    Asia-Pacific Conference on Plasma Science and Technology (11th APCPST)  2012.10 

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:京都大学   Country:Japan  

  • Measurements of amount of Si clusters incorporated during film deposition using quartz crystal microbalances International conference

    Y. Kim, K. Hatozaki, Y. Hashimoto, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Asia-Pacific Conference on Plasma Science and Technology (11th APCPST)  2012.10 

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:京都大学   Country:Japan  

  • Fabrication of ZnO Buffer Layers via Nitrogen-Mediated Crystallization for ZnO:Al Transparent Conducting Oxide: Effects of Oxygen Addition International conference

    I. Suhariadi, K. Oshikawa, K. Kuwahara, K. Matsushima, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, K. Koga, N. Itagaki, M. Shiratani

    Asia-Pacific Conference on Plasma Science and Technology (11th APCPST)  2012.10 

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:京都大学   Country:Japan  

  • Zinc-Indium Oxynitride Thin Films for Multiple-Quantum–Well Solar Cells International conference

    N. Itagaki, K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani

    Asia-Pacific Conference on Plasma Science and Technology (11th APCPST)  2012.10 

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:京都大学   Country:Japan  

  • コンビナトリアル大気圧DBDプラズマ照射による植物の成長促進

    北崎訓, 古閑一憲, 白谷正治, 林信哉

    成24年度(第65回)電気関係学会九州支部連合大会  2012.9 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:長崎大学   Country:Japan  

  • 周期同調酵母への大気圧DBDプラズマ照射の効果

    北崎訓, 古閑一憲, 白谷正治, 林信哉

    成24年度(第65回)電気関係学会九州支部連合大会  2012.9 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:長崎大学   Country:Japan  

  • A Theoretical Model of a Relationship between Plasma Fluctuation and Nanostructure Fluctuation International conference

    M. Shiratani, Y. Morita, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, K. Koga

    IUMRS‐ICEM 2012  2012.9 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:PACIFICO YOKOHAMA   Country:Japan  

  • Deposition of hard carbon films by using H-assisted plasma CVD International conference

    R. Torigoe, T. Urakawa, D. Yamashita, H. Matsuzaki, G. Uchida, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    IUMRS‐ICEM 2012  2012.9 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:PACIFICO YOKOHAMA   Country:Japan  

  • Selective deposition of nanoparticles to valleys of texture substrates International conference

    Y. Morita, K. Kamataki, G. Uchida, D. Yamashita, N. Itagaki, H. Seo, K. Koga, M. Shiratani

    IUMRS‐ICEM 2012  2012.9 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:PACIFICO YOKOHAMA   Country:Japan  

  • Measurements of Cluster Volume Fraction in Silicon Thin Films Using Quartz Crystal Microbalances International conference

    Y. Kim, K. Hatozaki, Y. Hashimoto, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    IUMRS‐ICEM 2012  2012.9 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:PACIFICO YOKOHAMA   Country:Japan  

  • High Capacity Li Ion Battery Anodes Using Silicon Carbide Nanoparticles Produced by Double Multi-Hollow Discharge Plasma CVD International conference

    K. Kamataki, M. Shiratani, T. Ishihara, H. Nagano, Y. Morita, K. Kuwahara, G. Uchida, H. Seo, N. Itagaki, K. Koga

    IUMRS‐ICEM 2012  2012.9 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:PACIFICO YOKOHAMA   Country:Japan  

  • Deposition of Si quantum-dot thin films for solar cell applications using multi-hollow discharge plasma CVD International conference

    G. Uchida, M. Sato, H. Seo, Y. Wang, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    IUMRS‐ICEM 2012  2012.9 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:PACIFICO YOKOHAMA   Country:Japan  

  • An infrared laser trap of a single dust particle for study of plasma-surface interactions International conference

    G. Uchida, K. Koga, D. Yamashita, K. Kamataki, N. Itagaki, M. Shiratani

    IUMRS‐ICEM 2012  2012.9 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:PACIFICO YOKOHAMA   Country:Japan  

  • ZnO films with buffer layers crystallized via nitrogen mediation: effects of thickness of buffer layers International conference

    K. Kuwahara, N. Itagaki, D. Yamashita, G. Uchida, K. Kamataki, H. Seo, K. Koga, M. Shiratani

    IUMRS‐ICEM 2012  2012.9 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:PACIFICO YOKOHAMA   Country:Japan  

  • Hydrogenated Amorphous Silicon Solar Cells Fabricated by a Multi-hollow Discharge Plasma CVD Method International conference

    K. Hatozaki, Y. Hashimoto, D. Yamashita, H. Seo, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    IUMRS‐ICEM 2012  2012.9 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:PACIFICO YOKOHAMA   Country:Japan  

  • Fabrication of ZnO Films via Nitrogen-Mediated Crystallization as Buffer Layers for ZnO:Al Transparent Conducting Oxide International conference

    I. Suhariadi, K. Oshikawa, K. Kuwahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    IUMRS‐ICEM 2012  2012.9 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:PACIFICO YOKOHAMA   Country:Japan  

  • Fabrication of Zn-In-ON films with tunable optical bandgap for photovoltaic applications International conference

    K. Matsushima, K. Kuwahara, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    IUMRS‐ICEM 2012  2012.9 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:PACIFICO YOKOHAMA   Country:Japan  

  • Enhancement of light harvesting efficiency with multi-layered electrode of Si quantum dot-sensitized solar cells International conference

    H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    IUMRS‐ICEM 2012  2012.9 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:PACIFICO YOKOHAMA   Country:Japan  

  • Effects of V-doped TiO2 on Performance Si QDSCs International conference

    Y. Wang, J. Boo, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    IUMRS‐ICEM 2012  2012.9 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:PACIFICO YOKOHAMA   Country:Japan  

  • Deposition of B-doped a-Si:H films using a cluster eliminating filter International conference

    Y. Hashimoto, K. Nakahara, T. Matsunaga, K. Hatozaki, D. Yamashita, G. Uchida, H. Seo, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani

    IUMRS‐ICEM 2012  2012.9 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:PACIFICO YOKOHAMA   Country:Japan  

  • Zinc-Indium Oxynitride Semiconductors for Piezo-Electric-Field Effect MQW Solar Cells International conference

    N. Itagaki, K. Matsushima, K. Kuwahara, D. Yamashita, G. Uchida, K. Kamataki, H. Seo, K. Koga, M. Shiratani

    IUMRS‐ICEM 2012  2012.9 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:PACIFICO YOKOHAMA   Country:Japan  

  • In-situ Measurements of Size Distribution of Nanoparticles Formed in Reactive Plasmas Using a Laser Light Scattering Method International conference

    M. Shiratani, K. Kamataki, Y. Morita, G. Uchida, H. Seo, N. Itagaki, K. Koga

    IUMRS‐ICEM 2012  2012.9 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:PACIFICO YOKOHAMA   Country:Japan  

  • Si量子ドット増感太陽電池の高性能化のための多硫化物電解液の最適化

    市田大樹, 王玉亭, 内田儀一郎, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    第6回プラズマエレクトロニクスインキュベーションホール  2012.9 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:国立中央青少年交流の家, 静岡   Country:Japan  

  • 高効率量子井戸型太陽電池のための新規窒化物半導体薄膜の作製

    廣瀬忠史, 松島宏一, 桑原和成, 押川晃一郎, I. Suhariadi, 山下大輔, 徐鉉雄, 鎌滝晋礼, 内田儀一郎, 板垣奈穂, 古閑一憲, 白谷正治

    第6回プラズマエレクトロニクスインキュベーションホール  2012.9 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:国立中央青少年交流の家, 静岡   Country:Japan  

  • プラズマ壁相互作用により発生するカーボンナノダストの生成に関する実験

    立石瑞樹, 西山雄士, 森田康彦, 山下大輔, 内田儀一郎, 徐鉉雄, 板垣奈穂, 古閑 一憲, 白谷正治, 芦川直子, 増崎貴, 西村清彦, 相良明男, the LHD Experimental Group, S. Bornholdt, H. Kersten

    第6回プラズマエレクトロニクスインキュベーションホール  2012.9 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:国立中央青少年交流の家, 静岡   Country:Japan  

  • Study on the fabrication of paint-type Si quantum dot-sensitized solar cells International conference

    H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    International Conference on Electronic materials and Nanotechnology for Green Environment (ENGE 2012)  2012.9 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ramada Plaza Hotel   Country:Korea, Republic of  

  • 大容量リチウムイオン電池用プラズマCVD生成SiCナノ粒子負極の開発

    森田康彦, 鎌滝晋礼, 内田儀一郎, 山下大輔, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治, 永野裕己, 石原達己

    第73回応用物理学会学術講演会  2012.9 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:愛媛大学・松山大学   Country:Japan  

  • プラズマの農業応用 -農産物殺菌から植物成長制御まで-

    林信哉, 神田康三, 大島一里, 柳生義人, 米須章, 古閑一憲, 白谷正治

    第73回応用物理学会学術講演会  2012.9 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:愛媛大学・松山大学   Country:Japan  

  • コンビナトリアル大気圧DBDプラズマ照射による植物の成長促進

    北崎訓, T. Sarinont, 古閑一憲, 白谷正治, 林信哉

    第73回応用物理学会学術講演会  2012.9 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:愛媛大学・松山大学   Country:Japan  

  • プラズマ異方性CVD による窒化レジスト上への硬質カーボン膜の製膜

    鳥越隆平, 浦川達也, 山下大輔, 内田儀一郎, 古閑一憲, 白谷正治, 節原裕一, 関根誠, 堀勝

    第73回応用物理学会学術講演会  2012.9 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:愛媛大学・松山大学   Country:Japan  

  • 微粒子プラズマ中におけるAr準安定粒子密度の空間分布計測

    内田儀一郎, 鎌滝晋礼, 森田康彦, H. Seo, 板垣奈穂, 古閑一憲, Nader Sadeghi, 白谷正治

    第73回応用物理学会学術講演会  2012.9 

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    Event date: 2012.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:愛媛大学・松山大学   Country:Japan  

  • Crystallinity control of sputtered ZnO films by utilizing buffer layers fabricated via nitrogen mediated crystallization: Effects of nitrogen flow rate International conference

    N. Itagaki, I. Suhariadi, K. Kuwahara, K. Oshikawa, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani

    13th International Conference on Plasma Surface Engineering (PSE2012)  2012.9 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Garmisch-Partenkirchen   Country:Germany  

  • Plasma CVD of hard carbon films on PMMA International conference

    M. Shiratani, G. Uchida, K. Koga, R. Torigoe, T. Urakawa

    2012 International Conference on Flexible and Printed Electronics (ICFPE2012)  2012.9 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:東京大学本郷キャンパス   Country:Japan  

  • Growth Enhancement of Plants by Combinatorial Plasma Irradiation International conference

    M. Shiratani, S. Kitazaki, T. Sarinont, K. Koga, G. Uchida, N. Itagaki, H. Seo, K. Kamataki, N. Hayashi

    The 9th International Bioelectrics Symposium (BIOELECTRICS 2012)  2012.9 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:KKR Hotel Kumamoto   Country:Japan  

  • The improvement on the performance of quantum dot-sensitized solar cells with functionalized Si International conference

    H. Seo, Y. Wang, M. Sato, G. Uchida, K. Koga, N. Itagaki, K. Kamataki and M. Shiratani

    International Union of Materials Research Society – International Conference in Asia – 2012 (IUMRS-ICA-2012)  2012.8 

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    Event date: 2012.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:BEXCO   Country:Korea, Republic of  

  • Nanostructure control of thin films depoisted by plasmas and its application to fabrication of green energy devices (Invited) Invited International conference

    M. Shiratani, N. Itagaki, K. Koga, Uchida G., K. Kamataki, H. Seo

    (APT2012) The 2nd Advanced Plasma Technology for Green Energy and Biomedical Applications  2012.8 

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    Event date: 2012.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Chiangmai University   Country:Thailand  

  • The effects of the electrolyte composition on the performance of Si quantum dot-sensitized solar cells International conference

    H. Seo, Y. Wang, M. Sato, G. Uchida, K. Koga, M. Shiratani, M. Son, H. Kim

    63rd Annual Meeting of the International Society of Electrochemistry  2012.8 

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    Event date: 2012.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Prague   Country:Other  

  • Deposition of Si nano-particle films for Si quantum-dots sensitized solar cells International conference

    G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    The 6th International Conference on Technological Advances of Thin Films and Surface Coating  2012.7 

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    Event date: 2012.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Singapore Management University   Country:Singapore  

  • Development of dust particle manipulation method in capacitively coupled plasmas via Electrical Asymmetry Effect International conference

    S. Iwashita, G. Uchida, J. Schulze, E. Sch¨ungel, P. Hartmann, K. Koga, M. Shiratani, Zolt´an Donk´o, U. Czarnetzki

    22th Europhysics Conference on Atomic and Molecular Physics of Ionized Gases (ESCAMPIG2012)  2012.7 

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    Event date: 2012.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Viana do Castelo   Country:Portugal  

  • Impacts of plasma fluctuation on nanoparticle growth in reactive plasmas International conference

    M. Shiratani, K. Kamataki, Y. Morita, K. Koga, G. Uchida, N. Itagaki, H. Seo

    IEEE ICOPS2012  2012.7 

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    Event date: 2012.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Edingburgh   Country:Other  

  • Plasma etching resistance of plasma anisotropic CVD carbon films International conference

    R. Torigoe, T. Urakawa, D. Yamashita, H. Matsuzaki, G. Uchida, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    IEEE ICOPS2012  2012.7 

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    Event date: 2012.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Edingburgh   Country:Other  

  • ダイバータシミュレータ中のカーボンナノダストの生成と輸送に関する実験

    西山雄士, 森田康彦, 山下大輔, 鎌滝晋礼, 内田儀一郎, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治, 芦川直子, 増崎貴, 西村清彦, 相良明男, LHD実験グループ, S. Bornholdt, H. Kersten

    第9回核融合エネルギー連合講演会  2012.6 

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    Event date: 2012.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神戸国際会議場   Country:Japan  

  • LHDにおける炭素堆積層評価および水素保持特性に関する研究

    芦川直子, 鳥養祐二, 深山健介, 浜地志憲, 古閑一憲, 山内有二, 信太祐二, 上田良夫, 日野友明, 松山政夫, LHD実験グループ

    第9回核融合エネルギー連合講演会  2012.6 

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    Event date: 2012.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神戸国際会議場   Country:Japan  

  • Application of SiC nanoparticle films to energy conversion devices: lithium ion batteries and quantum-dot solar cells (Invited) Invited International conference

    G. Uchida, K. Kamataki, H. Seo, Y. Morita, N. Itagaki, K. Koga, T. Ishihara, M. Shiratani

    The 15th International Workshop on Advanced Plasma Processing and Diagnostics  2012.6 

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    Event date: 2012.6

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Sungkyunkwan University   Country:Korea, Republic of  

  • The fabrication of multi-layered Si quantum dot-sensitized solar cells for better light harvesting (Invited) Invited International conference

    H. Seo, Y. wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    The 15th International Workshop on Advanced Plasma Processing and Diagnostics  2012.6 

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    Event date: 2012.6

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Sungkyunkwan University   Country:Korea, Republic of  

  • Observation of growth of nano-particles using a high speed camera International conference

    Y. Morita, K. Kamataki, K. Koga, G. Uchida, H. Seo, D. Yamashita, N. Itagaki, M. Shiratani

    The 15th International Workshop on Advanced Plasma Processing and Diagnostics  2012.6 

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    Event date: 2012.6

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Sungkyunkwan University   Country:Korea, Republic of  

  • Fabrication of ZnInON films with high crystallinity for photovoltaic applications International conference

    K. Matsushima, K. Kuwahara, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    The 15th International Workshop on Advanced Plasma Processing and Diagnostics  2012.6 

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    Event date: 2012.6

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Sungkyunkwan University   Country:Korea, Republic of  

  • Deposition of B-doped a-Si:H films with a cluster eliminating filter International conference

    Y. Hashimoto, K. Hatozaki, Y. Kim, G.u Uchida, H. Seo, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani

    The 15th International Workshop on Advanced Plasma Processing and Diagnostics  2012.6 

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    Event date: 2012.6

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Sungkyunkwan University   Country:Korea, Republic of  

  • 高効率量子井戸型太陽電池のための新規酸窒化物半導体薄膜の作製

    板垣奈穂, 松島宏一, 桑原和成, 押川晃一郎, I. Suhariadi, 山下大輔, 徐鉉雄, 鎌滝晋礼, 内田儀一郎, 古閑一憲, 白谷正治

    第9回「次世代の太陽光発電システム」シンポジウム  2012.5 

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    Event date: 2012.5 - 2012.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都テルサ   Country:Japan  

  • Discharge Power Dependence of Carbon Dust Flux in a Diverter Simulator International conference

    Y. Morita, K. Nishiyama, K. Koga, G. Uchida, H. Seo, K. Kamataki, D. Yamashita, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, the LHD Experimental Group, S. Bornholdt, H. Kersten

    20th International Conference on Plasma Surface Interactions 2012 (PSI2012)  2012.5 

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    Event date: 2012.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Eurogress Aachen   Country:Germany  

  • Control of transport of micrometer-sized particles in capacitively coupled plasmas International conference

    S. Iwashita, J. Schulze, E. Schüngel, G. Uchida, K. Koga, M. Shiratani, P. Hartmann, Z. Donkó, U. Czarnetzki

    13th Workshop on the Physics of Dusty Plasma (WPDP2012)  2012.5 

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    Event date: 2012.5

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Waco, Texas   Country:Other  

  • Characteristics of stable a-Si:H Schottoky cells fabricated by suppressing cluster deposition International conference

    M. Shiratani, K. Nakahara, K. Hatozaki, Y. Hashimoto, T. Matsunaga, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga

    2012 MRS Spring Meeting  2012.4 

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    Event date: 2012.4

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Moscone West Convention Center, San Francisco   Country:Other  

  • Rapid growth of radish sprouts using low pressure oxygen radio frequency plasma irradiation International conference

    S. Kitazaki, K. Koga, M. Shiratani, N. Hayashi

    2012 MRS Spring Meeting  2012.4 

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    Event date: 2012.4

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Moscone West Convention Center, San Francisco   Country:Other  

  • Influence of Atmospheric Pressure Torch Plasma Irradiation on Plant Growth International conference

    Y. Akiyoshi, N. Hayashi, S. Kitazaki, K. Koga, M. Shiratani

    2012 MRS Spring Meeting  2012.4 

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    Event date: 2012.4

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Moscone West Convention Center, San Francisco   Country:Other  

  • Effects of Atmospheric Pressure Dielectric Barrier Discharges Irradiation on Yeast Growth International conference

    S. Kitazaki, K. Koga, M. Shiratani, N. Hayashi

    2012 MRS Spring Meeting  2012.4 

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    Event date: 2012.4

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Moscone West Convention Center, San Francisco   Country:Other  

  • The analysis on the optical properties of size-controllable Si nano-particles by multi-hollow plasma discharge CVD International conference

    H. Seo, Y. Kim, M. Sato, Y. Wang, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    2012 MRS Spring Meeting  2012.4 

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    Event date: 2012.4

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Moscone West Convention Center, San Francisco   Country:Other  

  • Optical Emission Study for Chracterization of Nanoparticle-Suppressed Plasma CVD for Microcrystalline Film Deposition International conference

    Y. Kim, T. Matsunaga, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    2012 MRS Spring Meeting  2012.4 

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    Event date: 2012.4

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Moscone West Convention Center, San Francisco   Country:Other  

  • プラズマ揺らぎとプラズマ生成ナノ粒子のサイズ分布実験と理論

    白谷正治, 鎌滝晋礼, 西山雄士, 森田康彦, 山下大輔, 内田儀一郎, 徐鉉雄, 板垣奈穂, 古閑一憲

    第59回応用物理学関係連合講演会  2012.3 

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    Event date: 2012.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  • 酸素ラジカル照射による植物細胞内の酸化還元応答と成長促進効果

    秋吉雄介, 林信哉, 北﨑訓, 古閑一憲, 白谷正治, 松下智直

    第59回応用物理学関係連合講演会  2012.3 

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    Event date: 2012.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  • 酵母の成長特性に対する大気圧D B D 照射効果

    北﨑訓, 古閑一憲, 白谷正治, 林信哉

    第59回応用物理学関係連合講演会  2012.3 

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    Event date: 2012.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  • 窒化Si ナノ粒子膜を用いた量子ドット増感型太陽電池の効率波長依存性

    内田儀一郎, 佐藤宗治, 徐鉉雄, 王玉亭, 鎌滝普札, 板垣奈穂, 古閑一憲, 白谷正治

    第59回応用物理学関係連合講演会  2012.3 

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    Event date: 2012.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  • Siナノ粒子量子ドット増感型太陽電池電極の最適化

    王玉亭, 佐藤宗治, 徐鉉雄, 内田儀一郎, 板垣奈穂, 古閑一憲, 白谷正治

    第59回応用物理学関係連合講演会  2012.3 

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    Event date: 2012.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  • 高安定a-Si:H 膜を用いたショットキーセル特性の光照射時間依存性

    波戸﨑浩介, 中原賢太, 橋本優史, 松永剛明, 山下大輔, 松崎秀文, 徐鉉雄, 内田儀一郎, 板垣奈穂, 古閑一憲, 白谷正治

    第59回応用物理学関係連合講演会  2012.3 

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    Event date: 2012.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  • ダストの生成に対する熱流束の影響とダストフラックスの制御

    西山雄士, 森田康彦, 山下大輔, 鎌滝晋礼, 内田儀一郎, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治, 芦川直子, 増崎貴, 西村清彦, 相良明男, L H D実験グループ

    第59回応用物理学関係連合講演会  2012.3 

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    Event date: 2012.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  • クラスター除去フィルタを用いたP ドープn 型a-Si:H の製膜

    橋本優史, 中原賢太, 松永剛明, 波戸崎浩介, 内田儀一郎, 徐絃雄, 板垣奈穂, 鎌滝晋礼, 古閑一憲, 白谷正治

    第59回応用物理学関係連合講演会  2012.3 

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    Event date: 2012.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  • Effects of Silicon Nano-particles on Properties of Microcrystalline Silicon Thin Films Frabricated using Multi-hollow Discharge CVD Plasmas

    Y. Kim, 松永剛明, 徐鉉雄, 鎌滝晋礼, 内田儀一郎, 板垣奈穂, 古閑一憲, 白谷正治

    第59回応用物理学関係連合講演会  2012.3 

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    Event date: 2012.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  • プラズマ異方性CVDカーボン膜の硬度のイオンエネルギー依存性

    浦川達也, 鳥越隆平, 徐鉉雄, 内田儀一郎, 板垣奈穂, 古閑一憲, 白谷正治, 節原裕一, 関根誠, 堀勝

    第59回応用物理学関係連合講演会  2012.3 

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    Event date: 2012.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  • 窒素添加結晶化バッファー層によるZnO:Al 薄膜の結晶性制御: 窒素供給量の影響

    板垣奈穂, I. Suhariadi, 桑原和成, 山下大輔, 徐鉉雄, 鎌滝晋礼, 内田儀一郎, 古閑一憲, 白谷正治

    第59回応用物理学関係連合講演会  2012.3 

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    Event date: 2012.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  • Control of transport and distribution of dust particles in capacitively coupled plasmas International conference

    S. Iwashita, G. Uchida, J. Schulze, E. Schüngel, K. Koga, M. Shiratani, P. Hartmann, Z. Donko, U. Czarnetzki

    DPG Spring Meeting of the Section AMOP (SAMOP)  2012.3 

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    Event date: 2012.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:University of Stuttgart   Country:Germany  

  • Plasma fluctuation and plasma nanotechnologies (Invited) Invited International conference

    M. Shiratani, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, K. Koga

    The 5th International Conference on Plasma Nanotechnology and Science (IC-PLANTS 2012)  2012.3 

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    Event date: 2012.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Freude, Inuyama International Sightseeing Center, Nagoya   Country:Japan  

  • Growth control of dry yeast using atmospheric pressure dielectric barrier discharge plasma irradiation International conference

    S. Kitazaki, K. Koga, M. Shiratani, N. Hayashi

    The 5th International Conference on Plasma Nanotechnology and Science (IC-PLANTS 2012)  2012.3 

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    Event date: 2012.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Freude, Inuyama International Sightseeing Center, Nagoya   Country:Japan  

  • Properties of microcrystalline silicon thin films with/without silicon nanoparticles deposited by multi-hollow plasma CVD International conference

    Y. Kim, T. Matsunaga, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    The 5th International Conference on Plasma Nanotechnology and Science (IC-PLANTS 2012)  2012.3 

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    Event date: 2012.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Freude, Inuyama International Sightseeing Center, Nagoya   Country:Japan  

  • A-Si:H Schottky Cells with Quite Low Light Induced Degradation Fabricated by Multi-hollow Discharge Plasma CVD International conference

    M. Shiratani, K. Hatozaki, K. Nakahara, Y. Hashimoto, T. Matsunaga, D. Yamashita, H. Matsuzaki, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga

    4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2012)  2012.3 

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    Event date: 2012.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:中部大学   Country:Japan  

  • Measurements of Nitric Oxide Generated from Dry Yeast Irradiated by Dielectric Barrier Discharge Plasmas International conference

    S. Kitazaki, K. Koga, M. Shiratani, N. Hayashi

    4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2012)  2012.3 

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    Event date: 2012.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:中部大学   Country:Japan  

  • Mesurements of energy influx towards a graphite target in helicon H2 discharge plasmas using a calorimetric probe International conference

    K. Nishiyama, Y. Morita, D. Yamashita, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani, N. Ashikawa, S. MasuzakiI, K. Nishimura, A. sagara, The LHD Expreimental Group, S. Bornholdt, H. Kersten

    4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2012)  2012.3 

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    Event date: 2012.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:中部大学   Country:Japan  

  • Control of dust-particle transportation in multi-frequency capacitively coupled radio frequency discharge International conference

    G. Uchida, Y. Wang, M. Sato, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2012)  2012.3 

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    Event date: 2012.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:中部大学   Country:Japan  

  • The improvement on the adhesion of Si nano-particles for Si quantum dot-sensitized solar cells International conference

    H. Seo, M. Sato, Y. Wang, Y. Kim, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2012)  2012.3 

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    Event date: 2012.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:中部大学   Country:Japan  

  • Optical Emission Chracteristics of Nanoparticle-supressed CVD Plasmas for Microcrystalline Silicon Film Deposition International conference

    Y. Kim, T. Matsunaga, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2012)  2012.3 

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    Event date: 2012.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:中部大学   Country:Japan  

  • Interaction between amplitude modulated plasmas and nanoparitcles growth in the plasmas International conference

    K. Kamataki, K. Koga, G. Uchida, N. Itagaki, H. Seo, M. Shiratani

    4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2012)  2012.3 

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    Event date: 2012.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:中部大学   Country:Japan  

  • Etching rate of carbon films deposited by H-assisted plasma CVD International conference

    T. Urakawa, R. Torigoe, H. Seo, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2012)  2012.3 

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    Event date: 2012.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:中部大学   Country:Japan  

  • Effect of Hydrogen Dilution on ZnO Thin Films Fabricated via Nitrogen Mediated Crystallization International conference

    I. Suhariadi, K. Matsushima, K. Kuwahara, K. Oshikawa, K. Nakahara, D. Yamashita, H. Seo, G. Uchida, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2012)  2012.3 

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    Event date: 2012.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:中部大学   Country:Japan  

  • Impacts of plasma fluctuation on nanostructure formation using plasmas (Invited) Invited International conference

    M. Shiratani, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, K. Koga

    The Third International Symposium on Plasma Nanoscience (iPlasmaNano-III)  2012.2 

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    Event date: 2012.2 - 2012.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Malaysia and Nanyang Technological University   Country:Malaysia  

  • プラズマとナノ界面の相互作用の制御

    白谷正治, 古閑一憲, 内田儀一郎, 鎌滝晋礼, 板垣奈穂

    東北大学電気通信研究所共同プロジェクト研究会, 仙台"プラズマフォーラム"  2012.2 

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    Event date: 2012.2

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:秋保温泉岩沼屋   Country:Japan  

  • Control of deposition profile of carbon films on fine trench using low temperature H-assisted plasma CVD method International conference

    T. Urakawa, R. Torigoe, H. Seo, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    第8回日欧プラズマプロセス共同シンポジウム  2012.1 

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    Event date: 2012.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:東大寺総合文化センター   Country:Japan  

  • Effects of nano-particles on multi-hollow discharge CVD plasmas for microcrystalline silicon thin film deposition International conference

    Y. Kim, T. Matsunaga, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    第8回日欧プラズマプロセス共同シンポジウム  2012.1 

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    Event date: 2012.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:東大寺総合文化センター   Country:Japan  

  • Recent progress in frontier science of interactions between plasmas and nano-interfaces (Invited) Invited International conference

    M. Shiratani, K. Koga, K. Kamataki, G. Uchida, H. Seo, N. Itagaki

    The 14th International Workshop on Advanced Plasma Processing and Diagnostics  2012.1 

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    Event date: 2012.1

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Kyushu University   Country:Japan  

  • Quantum Efficiency of Quantum Dot-Sensitized Solar Cells Using Nitridated Si Nano-Particles Produced by Double Multi-Hollow Discharges PECVD International conference

    M. Sato, G. Uchida, H. Seo, Y. Wang, K. Nakahara, T. Matsunaga, K. Koga, M. Shiratani

    The 14th International Workshop on Advanced Plasma Processing and Diagnostics  2012.1 

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    Event date: 2012.1

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Kyushu University   Country:Japan  

  • Growth characteristics of bread yeast using atmospheric pressure dielectric barrier discharge irradiation International conference

    S. Kitazaki, K. Koga, M. Shiratani, N. Hayashi

    The 14th International Workshop on Advanced Plasma Processing and Diagnostics  2012.1 

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    Event date: 2012.1

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Kyushu University   Country:Japan  

  • Bias voltage dependence of mass density of plasma CVD carbon films International conference

    R. Torigoe, T. Urakawa, D. Yamashita, H. Matsuzaki, G. Uchida, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    The 14th International Workshop on Advanced Plasma Processing and Diagnostics  2012.1 

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    Event date: 2012.1

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Kyushu University   Country:Japan  

  • The improvement on the combination between TiO2 and Si nano-particles for higher performance of Si quantum dot-sensitized solar cells (Invited) Invited International conference

    H. Seo, M. Sato, Y. wang, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    The 14th International Workshop on Advanced Plasma Processing and Diagnostics  2012.1 

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    Event date: 2012.1

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Kyushu University   Country:Japan  

  • Optimization of Redox Electrolyte for Higher Performance of Si Quantum Dot-sensitized Solar cells International conference

    Y. Wang, M. Sato, H. Seo, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    The 14th International Workshop on Advanced Plasma Processing and Diagnostics  2012.1 

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    Event date: 2012.1

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Kyushu University   Country:Japan  

  • High stabilization of a-Si:H films by discharge plasma control International conference

    K. Hatozaki, K. Nakahara, Y. Hashimoto, T. Matsunaga, D. Yamashita, H. Seo, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    The 14th International Workshop on Advanced Plasma Processing and Diagnostics  2012.1 

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    Event date: 2012.1

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Kyushu University   Country:Japan  

  • Fabrication of ZnO-Based Transparent Conducting Films on Buffer Layers Crystallized via Nitrogen Mediation International conference

    K. Oshikawa, I. Suhariadi, K. Kuwahara, D. Yamashita, Seo H., G. Uchida, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    The 14th International Workshop on Advanced Plasma Processing and Diagnostics  2012.1 

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    Event date: 2012.1

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Kyushu University   Country:Japan  

  • Fabrication of Novel Oxynitride Semiconductors by Magnetron Sputtering for Photovoltaic application International conference

    K. Matsushima, N. Itagaki, K. Kuwahara, K. Nakahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani

    The 14th International Workshop on Advanced Plasma Processing and Diagnostics  2012.1 

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    Event date: 2012.1

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Kyushu University   Country:Japan  

  • Effects on nano-patricls on crystalline orientation of microcrystalline silicon films for solar cells International conference

    T. Matsunaga, Y. Kim, K. Koga, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, M. Shiratani

    The 14th International Workshop on Advanced Plasma Processing and Diagnostics  2012.1 

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    Event date: 2012.1

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Kyushu University   Country:Japan  

  • Effects of Nano-particles on Properties of Microcrystalline Silicon Thin Films Fabricated using Multi-hollow Discharge CVD Plasmas International conference

    Y. Kim, T. Matsunaga, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    The 14th International Workshop on Advanced Plasma Processing and Diagnostics  2012.1 

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    Event date: 2012.1

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Kyushu University   Country:Japan  

  • Effects of deposition temperature on the properties of ZnO films fabricated via nitrogen mediation International conference

    K. Kuwahara, N. Itagaki, K. Nakahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani

    The 14th International Workshop on Advanced Plasma Processing and Diagnostics  2012.1 

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    Event date: 2012.1

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Kyushu University   Country:Japan  

  • Effect of N2/Ar Flow Rate Gas Ratio on the AZO Thin Films with Buffer Layers Deposited via Nitrogen Mediated Crystallization International conference

    I. Suhariadi, N. Itagaki, K. Kuwahara, K. Oshikawa, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, K. Nakahara, M. Shiratani

    The 14th International Workshop on Advanced Plasma Processing and Diagnostics  2012.1 

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    Event date: 2012.1

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Kyushu University   Country:Japan  

  • Dust Removal by Applying Bias Voltage to Reactor Wall in Large Helical Device International conference

    K. Nishiyama, Y. Morita, D. Yamashita, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, the LHD Experimental Group

    The 14th International Workshop on Advanced Plasma Processing and Diagnostics  2012.1 

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    Event date: 2012.1

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Kyushu University   Country:Japan  

  • Discharge power dependence of dust flux in helicon discharge reactor International conference

    Y. Morita, K. Nishiyama, K. Koga, G. Uchida, H. Seo, K. Kamataki, D. Yamashita, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, the LHD Experimental Group, S. Bornholdt, H. Kersten

    The 14th International Workshop on Advanced Plasma Processing and Diagnostics  2012.1 

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    Event date: 2012.1

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Kyushu University   Country:Japan  

  • Deposition profile control of carbon films on trench structure using plasma anisotropic CVD method International conference

    T. Urakawa, R. Torigoe, H. Seo, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    The 14th International Workshop on Advanced Plasma Processing and Diagnostics  2012.1 

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    Event date: 2012.1

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Kyushu University   Country:Japan  

  • Deposition of p-type a-Si:H using SiH4+ B10H14 multi-hollow discharge plasma CVD as a window layer for pin cell International conference

    K. Nakahara, K. Hatozaki, Y. Hashimoto, T. Matsunaga, M. Sato, H. Matsuzaki, G. Uchida, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    The 14th International Workshop on Advanced Plasma Processing and Diagnostics  2012.1 

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    Event date: 2012.1

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Kyushu University   Country:Japan  

  • Deposition of P-doped a-Si:H films with a cluster eliminating filter International conference

    Y. Hashimoto, K. Nakahara, T. Matsunaga, K. Hatozaki, G. Uchida, H. Seo, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani

    The 14th International Workshop on Advanced Plasma Processing and Diagnostics  2012.1 

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    Event date: 2012.1

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Kyushu University   Country:Japan  

  • Stable a-Si:H Schottky Cells Fabricated by Multi-hollow Discharge Plasma CVD International conference

    M. Shiratani, K. Nakahara, K. Hatozaki, H. Seo, G. Uchida, N. Itagaki, K. Kamataki, K. Koga

    第21回日本MRS学術シンポジウム  2011.12 

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    Event date: 2011.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:横浜開港記念会館   Country:Japan  

  • Substrate dc bias voltage dependence of mass density of carbon films deposited using H-assisted plasma CVD International conference

    T. Urakawa, R. Torigoe, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    第21回日本MRS学術シンポジウム  2011.12 

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    Event date: 2011.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:横浜開港記念会館   Country:Japan  

  • Effect of Atmospheric Pressure Torch Plasma Irradiation on Plant Cells International conference

    Y. Akiyoshi, A. Nakahigashi, N. Hayashi, S. Kitazaki, K. Koga, M. Shiratani

    第21回日本MRS学術シンポジウム  2011.12 

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    Event date: 2011.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:横浜開港記念会館   Country:Japan  

  • Performance Enhancement of Si Quantum Dot-sensitized Solar Cells by Surface Modification Using ZnO barrier layer and 400nm TiO2 Particles International conference

    Y. Wang, M. Sato, H. Seo, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    第21回日本MRS学術シンポジウム  2011.12 

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    Event date: 2011.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:横浜開港記念会館   Country:Japan  

  • ZnO:Al Thin Films with Buffer Layers Fabricated via Nitrogen Mediated Crystallization: Effects of N2/Ar Gas Flow Rate Ratio International conference

    I. Suhariadi, N. Itagaki, K. Kuwahara, K. Oshikawa, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, K. Nakahara, M. Shiratani

    第21回日本MRS学術シンポジウム  2011.12 

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    Event date: 2011.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:横浜開港記念会館   Country:Japan  

  • Performance of quantum dot sensitized solar cells with nitridated Si nanoparticle films International conference

    G. Uchida, M. Sato, H. Seo, Y. Wang, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    第21回日本MRS学術シンポジウム  2011.12 

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    Event date: 2011.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:横浜開港記念会館   Country:Japan  

  • 反応性プラズマにおけるナノ粒子生成に対する放電電力摂動の効果

    鎌滝晋礼, 古閑一憲, 内田儀一郎, 板垣奈穂, 山下大輔, 松崎秀文, 白谷正治

    プラズマ・核融合学会 第15回九州・沖縄・山口支部大会  2011.12 

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    Event date: 2011.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大分大学工学部   Country:Japan  

  • 水素プラズマ-カーボン壁相互作用によるダスト生成に対する壁への熱流速の影響

    森田康彦, 西山雄士, 山下大輔, 鎌滝晋礼, 内田儀一郎, 板垣奈穂, 徐鉉雄, 古閑一憲, 白谷正治, 芦川直子, 増崎貴, 西村清彦, 相良明男, LHD実験グループ, S. BORNHOLDT, H. KERSTEN

    プラズマ・核融合学会 第15回九州・沖縄・山口支部大会  2011.12 

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    Event date: 2011.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大分大学工学部   Country:Japan  

  • クラスタ取込抑制マルチホロー放電プラズマCVD法で作製した光安定水素化アモルファスシリコン薄膜のショットキーセル特性

    波戸﨑浩介, 中原賢太, 橋本優史, 松永剛明, 山下大輔, 松崎秀文, 徐鉉雄, 鎌滝晋礼, 内田儀一郎, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会 第15回九州・沖縄・山口支部大会  2011.12 

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    Event date: 2011.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大分大学工学部   Country:Japan  

  • 水素プラズマのグラファイト壁への熱フラックスとダスト生成

    西山雄士, 森田康彦, 山下大輔, 鎌滝晋礼, 内田儀一郎, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治, 芦川直子, 増崎貴, 西村清彦, 相良明男, LHD実験グループ, S. Bornholdt, H. Kersten

    PWI合同研究会  2011.12 

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    Event date: 2011.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:核融合科学研究所, 岐阜   Country:Japan  

  • Zinc oxide-based transparent conducting films with buffer layers fabricated via nitrogen-mediated crystallization International conference

    N. Itagaki, K. Kuwahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani

    The 21st International Photovoltaic Science and Engineering Conference (PVSEC-21)  2011.12 

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    Event date: 2011.11 - 2011.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Pacifico Yokohama   Country:Japan  

  • Stable schottky solar cells using cluster-free a-si:h prepared by multi-hollow discharge plasma CVD International conference

    K. Hatozaki, K. Nakahara, G. Uchida, K. Koga, M. Shiratani

    The 21st International Photovoltaic Science and Engineering Conference (PVSEC-21)  2011.11 

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    Event date: 2011.11 - 2011.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Pacifico Yokohama   Country:Japan  

  • Quantum dot-sensitized solar cells using nitridated si nanoparticles produced by double multi-hollow discharges International conference

    M. Sato, Y. Wang, K. Nakahara, T. Matsunaga, H. Seo, G. Uchida, K. Koga, M. Shiratani

    The 21st International Photovoltaic Science and Engineering Conference (PVSEC-21)  2011.11 

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    Event date: 2011.11 - 2011.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Pacifico Yokohama   Country:Japan  

  • Properties and performance of si quantum dot-sensitized solar cells with low temperature titania paste International conference

    Y. Wang, M. Sato, T. Matsunaga, N. Itagaki, H. Seo, G. Uchida, K. Koga, M. Shiratani

    The 21st International Photovoltaic Science and Engineering Conference (PVSEC-21)  2011.11 

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    Event date: 2011.11 - 2011.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Pacifico Yokohama   Country:Japan  

  • Defect density of cluster-free a-si:h films deposited by multi-hollow discharge plasma CVD International conference

    K. Nakahara, K. Hatozaki, M. Sato, T. Matsunaga, D. Yamashita, H. Matsuzaki, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    The 21st International Photovoltaic Science and Engineering Conference (PVSEC-21)  2011.11 

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    Event date: 2011.11 - 2011.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Pacifico Yokohama   Country:Japan  

  • A study of optical emission spectroscopy on microcrystalline silicon film using multi-hollow discharge plasma CVD International conference

    Y. Kim, T. Matsunaga, D. Yamashita, K. Kamataki, N. Itagaki, G. Uchida, K. Koga, M. Shiratani

    The 21st International Photovoltaic Science and Engineering Conference (PVSEC-21)  2011.11 

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    Event date: 2011.11 - 2011.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Pacifico Yokohama   Country:Japan  

  • Zno films with buffer layers crystallized via nitrogen mediation: Effects of deposition temperature of buffer layers International conference

    K. Kuwahara, N. Itagaki, K. Nakahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani

    The 21st International Photovoltaic Science and Engineering Conference (PVSEC-21)  2011.12 

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    Event date: 2011.11 - 2011.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Pacifico Yokohama   Country:Japan  

  • Effects of nano-particles on (220) crystal orientation of microcrystallite silicon thin films International conference

    T. Matsunaga, Kim Y., K. Koga, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani

    The 21st International Photovoltaic Science and Engineering Conference (PVSEC-21)  2011.12 

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    Event date: 2011.11 - 2011.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Pacifico Yokohama   Country:Japan  

  • Control of size distribution of nanoparticles in reactive plasmas by using AM rf discharges

    M. Shiratani, G. Uchida, N. Itagaki, K. Kamataki, K. Koga

    12th Workshop on Fine Particle Plasmas (第12回 微粒子プラズマ研究会)  2011.11 

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    Event date: 2011.11

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:核融合科学研究所, 岐阜   Country:Japan  

  • プラズマCVD カーボン膜の硬度の基板バイアス依存性

    鳥越隆平, 浦川達也, 松崎秀文, 山下大輔, 内田儀一郎, 古閑一憲, 白谷正治, 節原裕一, 関根誠, 堀勝

    平成23年度応用物理学会九州支部学術講演会  2011.11 

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    Event date: 2011.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:鹿児島大学   Country:Japan  

  • Production and coagulation of carbon clusters by plasma methods

    T. Mieno, K. Koga, M. Shiratani

    12th Workshop on Fine Particle Plasmas (第12回 微粒子プラズマ研究会)  2011.11 

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    Event date: 2011.11

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:核融合科学研究所, 岐阜   Country:Japan  

  • 窒素添加結晶化法により作製したエピタキシャル酸化亜鉛薄膜の特性の成膜温度依存性

    松島宏一, 板垣奈穂, 桑原和成, 山下大輔, 鎌滝晋礼, 内田儀一郎, 古閑一憲, 白谷正治

    平成23年度応用物理学会九州支部学術講演会  2011.11 

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    Event date: 2011.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:鹿児島大学   Country:Japan  

  • クラスター除去フィルタを用いたP ドープa-Si;H の製膜ドープ量依存性

    橋本優史, 中原賢太, 松永剛明, 波戸崎浩介, 内田儀一郎, 板垣奈穂, 鎌滝晋礼, 古閑一憲, 白谷正治

    平成23年度応用物理学会九州支部学術講演会  2011.11 

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    Event date: 2011.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:鹿児島大学   Country:Japan  

  • LHDおよびLHDを模擬したヘリコン装置における水素ガスとグラファイトの相互作用により生じたダストの基板へのフラックスの基板バイアス電圧依存性

    森田康彦, 西山雄士, 山下大輔, 鎌滝晋礼, 内田儀一郎, 板垣奈穂, 古閑一憲, 白谷正治, 芦川直子, 増崎貴, 西村清彦, 相良明男, LHD実験グループ

    平成23年度応用物理学会九州支部学術講演会  2011.11 

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    Event date: 2011.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:鹿児島大学   Country:Japan  

  • Effects of substrate bias voltage on dust collection efficiency

    K. Nishiyama, Y. Morita, D. Yamashita, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, LHD Experimental Group

    12th Workshop on Fine Particle Plasmas (第12回 微粒子プラズマ研究会)  2011.11 

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    Event date: 2011.11

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:核融合科学研究所, 岐阜   Country:Japan  

  • プラズマCVDで成膜したSi薄膜へのナノ粒子含有の効果 International conference

    白谷正治, 金淵元, 松永剛明, 徐鉉雄, 鎌滝晋礼, 内田儀一郎, 板垣奈穂, 古閑一憲

    Plasma Conference 2011 (PLASMA2011)  2011.11 

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    Event date: 2011.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:石川県立音楽堂   Country:Japan  

  • 大気圧バリア放電プラズマ照射による酵母の成長促進特性 International conference

    北﨑訓, 古閑一憲, 白谷正治, 林信哉

    Plasma Conference 2011 (PLASMA2011)  2011.11 

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    Event date: 2011.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:石川県立音楽堂   Country:Japan  

  • 水素原子源付プラズマCVD装置を用いた炭素薄膜の異方性製膜に対する基板バイアス電圧の影響 International conference

    浦川達也, 松崎秀文, 山下大輔, 内田儀一郎, 古閑一憲, 白谷正治, 節原裕一, 関根誠, 堀勝

    Plasma Conference 2011 (PLASMA2011)  2011.11 

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    Event date: 2011.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:石川県立音楽堂   Country:Japan  

  • カーボンナノチューブ微粒子のプラズマ合成過程 International conference

    三重野哲, 古閑一憲, 白谷正治

    Plasma Conference 2011 (PLASMA2011)  2011.11 

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    Event date: 2011.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:石川県立音楽堂   Country:Japan  

  • FeSi2ナノ粒子薄膜の堆積 International conference

    佐藤宗治, 王玉亭, 中原賢太, 松永剛明, 徐鉉雄, 内田儀一郎, 古閑一憲, 白谷正治

    Plasma Conference 2011 (PLASMA2011)  2011.11 

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    Event date: 2011.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:石川県立音楽堂   Country:Japan  

  • Si量子ドット増感型太陽電池の電解液最適化 International conference

    王玉亭, 佐藤宗治, 徐鉉雄, 内田儀一郎, 板垣奈穂, 古閑一憲, 白谷正治

    Plasma Conference 2011 (PLASMA2011)  2011.11 

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    Event date: 2011.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:石川県立音楽堂   Country:Japan  

  • 微結晶シリコン薄膜作製用マルチホロー放電プラズマに対するナノ粒子の影響 International conference

    松永剛明, 金淵元, 古閑一憲, 徐鉉雄, 内田儀一郎, 鎌滝晋礼, 板垣奈穂, 白谷正治

    Plasma Conference 2011 (PLASMA2011)  2011.11 

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    Event date: 2011.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:石川県立音楽堂   Country:Japan  

  • 高密度水素プラズマとカーボン壁間のプラズマ・壁相互作用により形成されるカーボンダスト粒子の局所バイアス電圧印加による捕集 International conference

    西山雄士, 森田康彦, 山下大輔, 鎌滝晋礼, 内田儀一郎, 徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治, 芦川直子, 増崎貴, 西村清彦, 相良明男, LHD 実験グループ, S. Bornholdt, H. Kersten

    Plasma Conference 2011 (PLASMA2011)  2011.11 

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    Event date: 2011.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:石川県立音楽堂   Country:Japan  

  • 高速ガス流マルチホロープラズマCVD法を用いた高光安定クラスタフリーa-Si:H膜の作製 International conference

    波戸﨑浩介, 中原賢太, 橋本優史, 松永剛明, 山下大輔, 松崎秀文, 徐鉉雄, 鎌滝晋礼, 内田儀一郎, 板垣奈穂, 古閑一憲, 白谷正治

    Plasma Conference 2011 (PLASMA2011)  2011.11 

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    Event date: 2011.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:石川県立音楽堂   Country:Japan  

  • マルチホロー放電プラズマで作製した微結晶シリコン膜へのラジカルフラックス評価 International conference

    金淵元, 松永剛明, 徐鉉雄, 鎌滝晋礼, 内田儀一郎, 板垣奈穂, 古閑一憲, 白谷正治

    Plasma Conference 2011 (PLASMA2011)  2011.11 

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    Event date: 2011.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:石川県立音楽堂   Country:Japan  

  • スパッタリングプラズマへの窒素ガス添加のエピキシャルZnO薄膜物性に対する効果 International conference

    桑原和成, 中原賢太, 山下大輔, 徐鉉雄, 内田儀一郎, 鎌滝晋礼, 古閑一憲, 白谷正治, 板垣奈穂

    Plasma Conference 2011 (PLASMA2011)  2011.11 

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    Event date: 2011.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:石川県立音楽堂   Country:Japan  

  • クラスター除去フィルタを用いたクラスターフリー水素化アモルファスシリコンの製膜 International conference

    中原賢太, 波戸﨑浩介, 橋本優史, 松永剛明, 佐藤宗治, 山下大輔, 松崎秀文, 徐鉉雄, 鎌滝晋礼, 内田儀一郎, 板垣奈穂, 古閑一憲, 白谷正治

    Plasma Conference 2011 (PLASMA2011)  2011.11 

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    Event date: 2011.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:石川県立音楽堂   Country:Japan  

  • Study of interaction between plasma fluctuation and nucleation of nanoparticle in plasma CVD International conference

    K. Kamataki, K. Koga, G. Uchida, H. Seo, N. Itagaki, M. Shiratani

    Plasma Conference 2011 (PLASMA2011)  2011.11 

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    Event date: 2011.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:石川県立音楽堂   Country:Japan  

  • Ar/N2マグネトロンスパッタによる低抵抗ZnO:Al膜の作製 International conference

    板垣奈穂, 桑原和成, 中原賢太, 山下大輔, 鎌滝晋礼, 徐鉉雄, 内田儀一郎, 古閑一憲, 白谷正治

    Plasma Conference 2011 (PLASMA2011)  2011.11 

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    Event date: 2011.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:石川県立音楽堂   Country:Japan  

  • Deposition profile control of carbon films on trenched substrate by simultaneous plasma CVD and plasma etching International conference

    M. Shiratani, T. Urakawa, D. Yamashita, K. Kamataki, N. Itagaki, G. Uchida, K. Koga, Y. Setsuhara, M. Sekine, M. Hori

    64th Gaseous Electronics Conference  2011.11 

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    Event date: 2011.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Salt Palace Convention Center, Salt Lake City   Country:Other  

  • Influence of Atmospheric Pressure Torch Plasma Irradiation on Plant Growth International conference

    Y. Akiyoshi, N. Hayashi, S. Kitazaki, K. Koga, M. Shiratani

    64th Gaseous Electronics Conference  2011.11 

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    Event date: 2011.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Salt Palace Convention Center, Salt Lake City   Country:Other  

  • Performance enhancement of Si quantum dot-sensitized solar cells by surface modification using ZnO barrier layer International conference

    Y. Wang, M. Sato, H. Seo, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    The 33rd International Symposium on Dry Process (DPS 2011)  2011.11 

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    Event date: 2011.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto Garden Palace   Country:Japan  

  • Optical emission spectroscopy of Ar+H2+ C7H8 discharges for anisotropic plasma CVD of carbon International conference

    T. Urakawa, H. Matsuzaki, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    The 33rd International Symposium on Dry Process (DPS 2011)  2011.11 

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    Event date: 2011.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto Garden Palace   Country:Japan  

  • Influence of active oxygen species produced by atmospheric torch plasma on plant growth International conference

    N. Hayashi, Y. Akiyoshi, S. Kitazaki, K. Koga, M. Shiratani

    The 33rd International Symposium on Dry Process (DPS 2011)  2011.11 

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    Event date: 2011.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto Garden Palace   Country:Japan  

  • プラズマ中ダストの帯電揺らぎによる凝集と成長~分子からクラスター、ダストへの成長~

    布村正太, 白谷正治, 古閑一憲, 渡辺征夫

    第29回Grain Formation Workshop/平成23年度銀河のダスト研究会  2011.11 

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    Event date: 2011.11

    Language:Japanese   Presentation type:Symposium, workshop panel (public)  

    Venue:惑星科学研究センター, 神戸   Country:Japan  

  • Combinatorial Si Film Deposition by Multihollow Discharge Plasma CVD International conference

    M. Shiratani, Y. Kim, T. Matsunaga, K. Nakahara, G. Uchida, K. Kamataki, N. Itagaki, K. Koga

    第15回薄膜国際会議 (ICTF-15)  2011.11 

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    Event date: 2011.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto TERRSA   Country:Japan  

  • FeSi2 nano-particles embedded thin films by magnetron sputter deposition International conference

    M. Sato, Y. Wang, K. Nakahara, T. Matsunaga, H. Seo, G. Uchida, Koga Koga, M. Shiratani

    第15回薄膜国際会議 (ICTF-15)  2011.11 

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    Event date: 2011.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto TERRSA   Country:Japan  

  • 窒素添加結晶化法による超均一・低抵抗酸化亜鉛薄膜の作製

    板垣奈穂, 桑原和成, 中原賢太, 山下大輔, 鎌滝晋礼, 内田儀一郎, 古閑一憲, 白谷正治

    第27回九州・山口プラズマ研究会(兼応用物理学会九州支部シンポジウム「プラズマ計測とその応用 ナノプロセスから環境まで」)  2011.11 

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    Event date: 2011.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:かんぽの宿柳川, 福岡   Country:Japan  

  • Quantum dot sensitized solar cells using nanoparticles of Si compounds fabricated by multihollow discharge plasma CVD International conference

    M. Shiratani, G. Uchida, M. Sato, Y. Wang, K. Koga, N. Itagaki

    AVS 58th International Symposium & Exhibition  2011.11 

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    Event date: 2011.10 - 2011.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nashville, Tennessee   Country:Other  

  • Growth promotion of bread yeast using atmospheric pressure dielectric barrier discharges International conference

    S. Kitazaki, K. Koga, M. Shiratani, N. Hayashi

    AVS 58th International Symposium & Exhibition  2011.10 

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    Event date: 2011.10 - 2011.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nashville, Tennessee   Country:Other  

  • 自己組織化成長技術による極限ナノ加工プロセスの確立と有機基板上への高品質シリコン結晶成長の実現

    白谷正治, 古閑一憲

    CREST「ナノ科学を基盤とした革新的製造技術の創成」  2011.10 

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    Event date: 2011.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京   Country:Japan  

  • ZnOバリア層を用いたSiナノ粒子量子ドット増感型太陽電池

    王玉亭, 佐藤宗治, 徐鉉雄, 内田儀一郎, 板垣奈穂, 古閑一憲, 白谷正治

    第3回薄膜太陽電池セミナー  2011.10 

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    Event date: 2011.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:ラフレさいたま   Country:Japan  

  • マルチホロー放電プラズマCVDを用いたクラスターフリーa-Si:H膜の欠陥密度の基板温度依存性

    波戸﨑浩介, 中原賢太, 松永剛明, 内田儀一郎, 古閑一憲, 白谷正治

    第3回薄膜太陽電池セミナー  2011.10 

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    Event date: 2011.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:ラフレさいたま   Country:Japan  

  • マルチホロー放電プラズマCVD 法を用いた微結晶シリコン薄膜のコンビナトリアル製膜

    金淵元, 松永剛明, 古閑一憲, 白谷正治

    第3回薄膜太陽電池セミナー  2011.10 

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    Event date: 2011.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:ラフレさいたま   Country:Japan  

  • Impacts of Plasma Fluctuations in Reactive Plasmas (Invited) Invited International conference

    K. Kamataki, K. Koga, G. Uchida, N. Itagaki, M. Shiratani

    BIT's 1st Annual World Congress of Nano-S&T  2011.10 

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    Event date: 2011.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:World EXPO Center, Dalian   Country:China  

  • Fabrication of Si Nano-particles and Their Application to Quantum Dot Sensitized Solar Cells International conference

    G. Uchida, M. Sato, Y. Wang, T. Matsunaga, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    BIT's 1st Annual World Congress of Nano-S&T  2011.10 

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    Event date: 2011.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:World EXPO Center, Dalian   Country:China  

  • Fabrication of Si Nano-particles and Their Application to Quantum Dot Sensitized Solar Cells International conference

    G. Uchida, M. Sato, Y. Wang, T. Matsunaga, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    BIT's 1st Annual World Congress of Nano-S&T  2011.10 

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    Event date: 2011.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:World EXPO Center, Dalian   Country:China  

  • プラズマCVD中におけるナノ粒子成長に対するプラズマ揺らぎの効果

    鎌滝晋礼, 古閑一憲, 内田儀一郎, 板垣奈穂, 山下大輔, 松崎秀文, 白谷正治

    プラズマエレクトロニクス分科会20周年(研究会創設25周年)記念特別シンポジウム  2011.10 

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    Event date: 2011.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  • Deposition of Si Nano-particle Films for Quantum Dot Sensitized Solar Cells International conference

    G. Uchida, M. Sato, Y. Wang, T. Matsunaga, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Low Carbon Earth Summit (LCES-2011)  2011.10 

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    Event date: 2011.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Dalian city   Country:China  

  • Two dimensional laser light scattering to deduce size and density of nanoparticles in plasmas (Invited) Invited International conference

    M. Shiratani, K. Kamataki, K. Koga, G. Uchida

    Laser Aided Plasma Diagnostic conference (LAPD15)  2011.10 

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    Event date: 2011.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:ShineVille Resort, Jeju   Country:Korea, Republic of  

  • 高周波放電のAM変調によるナノ粒子サイズ分布の制御

    白谷正治, 鎌滝晋礼, 西山雄士, 古閑一憲, 内田儀一郎, 板垣奈穂

    平成23年度(第64回)電気関係学会九州支部連合大会  2011.9 

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    Event date: 2011.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:佐賀大学   Country:Japan  

  • 大気圧バリア放電照射による酵母の増殖促進

    北﨑訓, 古閑一憲, 白谷正治, 林信哉

    平成23年度(第64回)電気関係学会九州支部連合大会  2011.9 

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    Event date: 2011.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:佐賀大学   Country:Japan  

  • Spatial distribution of resistivity of ZnO:Al thin films fabricated on solid-phase crystallized seed layers International conference

    N. Itagaki, K. Kuwahara, D. Yamashita, K. Kamataki, G. Uchida, K. Koga, M. Shiratani

    European Material Research Society 2011 Fall Meeting (E-MRS)  2011.9 

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    Event date: 2011.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Warsaw University of Technology   Country:Poland  

  • Deposition of quantum dot thin films using Si nanoparticles with surface nitridation (Invited) Invited International conference

    M. Shiratani, K. Yamamoto, M. Sato, Y. Kawashima, K. Nakahara, K. Kamataki, N. Itagaki, G. Uchida, K. Koga

    The 8th Asian-European International Conference on Plasma Surface Engineering (AEPSE2011)  2011.9 

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    Event date: 2011.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Furama Hotel, Dalian   Country:China  

  • Effects of flux of carbon radicals on anisotropic deposition of carbon films on fine trench using H-assisted plasma CVD International conference

    T. Urakawa, H. Matsuzaki, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    The 8th Asian-European International Conference on Plasma Surface Engineering (AEPSE2011)  2011.9 

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    Event date: 2011.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Furama Hotel, Dalian   Country:China  

  • Effects of Si nano-particle incorporation on properties of microcrystalline silicon thin films studied by multi-hollow discharge CVD International conference

    Y. Kim, T. Matsunaga, D. Yamashita, K. Kamataki, N. Itagaki, G. Uchida, K. Koga, M. Shiratani

    The 8th Asian-European International Conference on Plasma Surface Engineering (AEPSE2011)  2011.9 

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    Event date: 2011.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Furama Hotel, Dalian   Country:China  

  • Plasma CVD of nanoparticle composite films and their applications (Plenary) Invited International conference

    M. Shiratani, K. Koga, G. Uchida

    The 8th Asian-European International Conference on Plasma Surface Engineering (AEPSE2011)  2011.9 

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    Event date: 2011.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Furama Hotel, Dalian   Country:China  

  • ZnOバリア層を用いたSiナノ粒子量子ドット増感型太陽電池

    王玉亭, 佐藤宗治, 徐鉉雄, 内田儀一郎, 板垣奈穂, 古閑一憲, 白谷正治

    第5回プラズマエレクトロニクスインキュベーションホール  2011.9 

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    Event date: 2011.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:国立中央青少年交流の家, 静岡   Country:Japan  

  • マルチホロー放電プラズマCVDを用いて作製したクラスターフリーa-Si:Hのショットキーセルの特性

    波戸﨑浩介, 中原賢太, 松永剛明, 佐藤宗治, 内田儀一郎, 古閑一憲, 白谷正治

    第5回プラズマエレクトロニクスインキュベーションホール  2011.9 

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    Event date: 2011.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:国立中央青少年交流の家, 静岡   Country:Japan  

  • 水素プラズマとカーボン壁間のプラズマ・壁相互作用により形成されるナノダストの基板へのフラックスの基板バイアスによる制御

    西山雄士, 森田康彦, 山下大輔, 鎌滝晋礼, 内田儀一郎, 板垣奈穂, 古閑一憲, 白谷正治, 芦川直子, 増崎貴, 西村清彦, 相良明男, LHD実験グループ

    第5回プラズマエレクトロニクスインキュベーションホール  2011.9 

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    Event date: 2011.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:国立中央青少年交流の家, 静岡   Country:Japan  

  • エピタキシャル酸化亜鉛薄膜作製における窒素添加効果

    桑原和成, 板垣奈穂, 中原賢太, 山下大輔, 内田儀一郎, 鎌滝晋礼, 徐鉉雄, 古閑一憲, 白谷正治

    第5回プラズマエレクトロニクスインキュベーションホール  2011.9 

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    Event date: 2011.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:国立中央青少年交流の家, 静岡   Country:Japan  

  • Frontier science of interactions between plasmas and nano‐interfaces (Plenary) Invited International conference

    M. Shiratani, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga

    (ICPAT2011)4th International Conference on Advanced Plasma Technologies  2011.9 

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    Event date: 2011.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hotel Salinera Strunjan   Country:Slovenia  

  • Carbon protective layer on top surface of trench substrate using H-assisted plasma CVD (Invited) Invited International conference

    M. Shiratani, T. Urakawa, G. Uchida, K. Koga, Y. Setsuhara, M. Sekine, M. Hori

    Workshop on Plasma Synthesis and Application of Nanomaterials  2011.9 

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    Event date: 2011.9

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Piran   Country:Slovenia  

  • ZnO:Al薄膜の抵抗率の面内均一性に対する固相結晶化シード層の効果

    板垣奈穂, 桑原和成, 山下大輔, 鎌滝晋礼, 内田儀一郎, 古閑一憲, 白谷正治

    第72回応用物理学会学術講演会  2011.9 

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    Event date: 2011.8 - 2011.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:山形大学   Country:Japan  

  • 水素プラズマとグラファイトの相互作用により発生したカーボンナノ粒子の基板バイアス電圧印加による配置制御

    西山雄士, 山下大輔, 鎌滝晋礼, 内田儀一郎, 板垣奈穂, 古閑一憲, 白谷正治, 芦川直子, 増崎貴, 西村清彦, 相良明男, LHD実験グループ

    第72回応用物理学会学術講演会  2011.8 

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    Event date: 2011.8 - 2011.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:山形大学   Country:Japan  

  • 微細溝への炭素薄膜の製膜形状制御における水素フラックスの効果

    浦川達也, 鳥越隆平, 松崎秀文, 山下大輔, 内田儀一郎, 古閑一憲, 白谷正治, 節原裕一, 関根誠, 堀勝

    第72回応用物理学会学術講演会  2011.9 

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    Event date: 2011.8 - 2011.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:山形大学   Country:Japan  

  • 窒化Siナノ粒子含有薄膜の光導電率の波長依存性

    佐藤宗治, 王玉亭, 中原賢太, 松永剛明, 山下大輔, 松崎秀文, 内田儀一郎, 鎌滝晋礼, 古閑一憲, 白谷正治

    第72回応用物理学会学術講演会  2011.9 

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    Event date: 2011.8 - 2011.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:山形大学   Country:Japan  

  • マルチホロー放電プラズマCVDを用いて作製したクラスターフリーa-Si:Hの膜質の基板温度依存性

    中原賢太, 波戸﨑浩介, 松永剛明, 佐藤宗治, 内田儀一郎, 山下大輔, 松崎秀文, 板垣奈穂, 古閑一憲, 白谷正治

    第72回応用物理学会学術講演会  2011.9 

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    Event date: 2011.8 - 2011.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:山形大学   Country:Japan  

  • Impacts of Plasma Fluctuations on Growth of Nano-Particles in Reactive Plasmas International conference

    K. Kamataki, H. Miyata, K. Koga, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani

    the XXX International Conference on Phenomena in Ionized Gases(ICPIG) 2012 Conference  2011.8 

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    Event date: 2011.8 - 2011.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Queen's University, Belfast   Country:Ireland  

  • Combinatorial study of substrate temperature dependence on properties of silicon films deposited using multihollow discharge plasma CVD International conference

    Y. Kim, T. Matsunaga, Y. Kawashima, D. Yamashita, K. Kamataki, N. Itagaki, G.u Uchida, K. Koga, M. Shiratani

    The 20th International Symposium on Plasma Chemistry (ISPC20)  2011.7 

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    Event date: 2011.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Loews Hotel, Philadelphia   Country:Other  

  • Deposition profile control of carbon films on submicron wide trench substrate using H-assisted plasma CVD International conference

    T. Urakawa, T. Nomura, H. Matsuzaki, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    The 20th International Symposium on Plasma Chemistry (ISPC20)  2011.7 

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    Event date: 2011.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Loews Hotel, Philadelphia   Country:Other  

  • Innovative Si solar cells: new approaches and demonstration of devices (Invited) Invited International conference

    M. Shiratani, K. Koga, G. Uchida, N. Itagaki

    The 13th International Workshop on Advanced Plasma Processing and Diagnostics  2011.7 

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    Event date: 2011.7

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Daejeon Convention Center   Country:Korea, Republic of  

  • Highly stable schottky cells using cluster-free a-Si:H deposited by multi-hollow discharge plasma CVD method International conference

    K. Hatozaki, K. Nakahara, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    The 13th International Workshop on Advanced Plasma Processing and Diagnostics  2011.7 

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    Event date: 2011.7

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Daejeon Convention Center   Country:Korea, Republic of  

  • Fluctuation Control towards Ultimate Plasma Nanotechnologies (Keynote) Invited International conference

    M. Shiratani, K. Koga, G. Uchida, N. Itagaki, K. Kamataki

    第24回プラズマ材料科学シンポジウム (SPSM-24)  2011.7 

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    Event date: 2011.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:大阪大学   Country:Japan  

  • Redox Characteristics of the components in plant cell using oxygen radicals International conference

    Y. Akiyoshi, Keiichi Yamamoto, A. Nakahigashi, N. Hayashi, S. Kitazaki, K. Koga, M. Shiratani

    第24回プラズマ材料科学シンポジウム (SPSM-24)  2011.7 

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    Event date: 2011.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:大阪大学   Country:Japan  

  • Effects of nanoparticle incorporation on crystalline orientation of microcrystalline silicon films prepared by multi-hollow plasma discharge CVD International conference

    Y. Kim, T. Matsunaga, K. Nakahara, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    第24回プラズマ材料科学シンポジウム (SPSM-24)  2011.7 

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    Event date: 2011.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:大阪大学   Country:Japan  

  • Control of radial density profile of nano-particle produced in reactive plasma by amplitude modulation of rf discharge voltage International conference

    K. Kamataki, K. Koga, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani

    第24回プラズマ材料科学シンポジウム (SPSM-24)  2011.7 

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    Event date: 2011.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:大阪大学   Country:Japan  

  • Fabrication of high quality ZnO films via nitrogen-mediated crystallization International conference

    N. Itagaki, K. Kuwahara, D. Yamashita, K. Kamataki, G. Uchida, K. Koga, M. Shiratani

    第24回プラズマ材料科学シンポジウム (SPSM-24)  2011.7 

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    Event date: 2011.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:大阪大学   Country:Japan  

  • Plasma Nanofactory International conference

    M. Shiratani, G. Uchida, K. Koga

    2011 International Workshop on Advanced Electrical Engineering and Related Topics  2011.7 

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    Event date: 2011.7

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Ruhr-University Bochum   Country:Germany  

  • Surface modification with TiO2 films for Si quantum dot-sensitized solar cells International conference

    Y. Wang, M. Sato, T. Matsunaga, N. Itagaki, G. Uchida, K. Koga, M. Shiratani

    2011 International Workshop on Advanced Electrical Engineering and Related Topics  2011.7 

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    Event date: 2011.7

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Ruhr-University Bochum   Country:Germany  

  • Nanoparticle formation due to interactions between H2 plasmas and graphite International conference

    K. Nishiyama, D. Yamashita, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, the LHD Experimental Group

    2011 International Workshop on Advanced Electrical Engineering and Related Topics  2011.7 

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    Event date: 2011.7

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Ruhr-University Bochum   Country:Germany  

  • Effects of solid-phase crystallization temperature on properties of epitaxial ZnO films International conference

    K. Kuwahara, N. Itagaki, K. Nakahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani

    2011 International Workshop on Advanced Electrical Engineering and Related Topics  2011.7 

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    Event date: 2011.7

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Ruhr-University Bochum   Country:Germany  

  • Deposition of Si Nano-particle Films and its Application to Quantum dot Sensitized Solar Cells International conference

    G. Uchida, M. Sato, Y. Wang, K. Nakahara, T. Matsunaga, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    2011 International Workshop on Advanced Electrical Engineering and Related Topics  2011.7 

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    Event date: 2011.7

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Ruhr-University Bochum   Country:Germany  

  • Process Window Evaluation of Microcrystalline Silicon Films with and without Incorporating Clusters using Multi-hollow Discharge Plasma CVD International conference

    T. Matsunaga, Yeon Won Kim, K. Koga, K. Nakahara, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani

    The 3rd International Conference on Microelectronics and Plasma Technology (ICMAP-2011)  2011.7 

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    Event date: 2011.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Furama Hotel, Dalian   Country:China  

  • Substrate temperature dependence of defect density of cluster-free a-Si:H films deposited using SiH4 multi-hollow discharge plasma CVD International conference

    K. Hatozaki, K. Nakahara, G. Uchida, K. Koga, M. Shiratani

    The 3rd International Conference on Microelectronics and Plasma Technology (ICMAP-2011)  2011.7 

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    Event date: 2011.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Furama Hotel, Dalian   Country:China  

  • Applications of nanoparticles formed in reactive plasmas: from solar cells to LSI (Invited) Invited International conference

    M. Shiratani, K. Koga, G. Uchida

    International Workshop on Plasmas and Particles  2011.6 

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    Event date: 2011.6

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Kangwon National University   Country:Korea, Republic of  

  • Performance enhancement of Si quantum dot-sensitized solar cells by surface coating

    Y. Wang, M. Sato, T. Matsunaga, N. Itagaki, G. Uchida, K. Koga, M. Shiratani

    九州表面・真空研究会2011(兼第16回九州薄膜表面研究会)  2011.6 

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    Event date: 2011.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:長崎大学   Country:Japan  

  • 微細溝へのカーボン薄膜製膜速度の主放電電力依存性

    浦川達也, 松崎秀文, 山下大輔, 内田儀一郎, 古閑一憲, 白谷正治, 節原裕一, 関根誠, 堀勝

    九州表面・真空研究会2011(兼第16回九州薄膜表面研究会)  2011.6 

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    Event date: 2011.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:長崎大学   Country:Japan  

  • マルチホロー放電プラズマCVD による微結晶シリコン製膜プロセスウィンドウのガス圧力依存性

    松永剛明, 金淵元, 内田儀一郎, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    九州表面・真空研究会2011(兼第16回九州薄膜表面研究会)  2011.6 

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    Event date: 2011.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:長崎大学   Country:Japan  

  • 高光安定a-Si太陽電池の開発

    白谷正治, 古閑一憲, 板垣奈穂, 内田儀一郎

    第3回薄膜コンソ技術委員会  2011.5 

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    Event date: 2011.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:産総研関西センター, 大阪   Country:Japan  

  • Fabrication of highly conducting ZnO:Al films utilizing solid-phase crystallized seed layer International conference

    N. Itagaki, K. Kuwahara, K. Nakahara, D. Yamashita, K. Kamataki, G. Uchida, K. Koga, M. Shiratani

    European Materials Research Society 2011 Spring Meeting  2011.5 

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    Event date: 2011.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Congress Center, Nice   Country:France  

  • Transport control of carbon nanoparticles in plasmas by biasing wall potential for plasma nano-factories International conference

    K. Nishiyama, H. Miyata, D. Yamashita, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, and the LHD Experimental Group

    European Materials Research Society 2011 Spring Meeting  2011.5 

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    Event date: 2011.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Congress Center, Nice   Country:France  

  • High quality epitaxial ZnO films grown on solid-phase crystallized buffer layers International conference

    K. Kuwahara, N. Itagaki, K. Nakahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, and M. Shiratani

    European Materials Research Society 2011 Spring Meeting  2011.5 

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    Event date: 2011.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Congress Center, Nice   Country:France  

  • Plasma nanofactories for constructing nanosystems in the third generation nanotechnology (Invited) Invited International conference

    M. Shiratani, K. Koga

    6th International Workshop on Microplasmas  2011.4 

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    Event date: 2011.4

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Paris Marriott Rive Gauche Hotel and Conference Center   Country:France  

  • 固相結晶化シード層を用いた酸化亜鉛系透明導電膜の作製

    板垣奈穂, 桑原和成, 中原賢太, 山下大輔, 鎌滝晋礼, 内田儀一郎, 古閑一憲, 白谷正治

    第58回応用物理学関係連合講演会  2011.3 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  • 大気圧バリア放電による酵母の成長促進

    北崎訓, 内田儀一郎, 古閑一憲, 白谷正治, 林信哉

    第58回応用物理学関係連合講演会  2011.3 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  • 反応性プラズマ中のナノ粒子成長に対する気相揺らぎの効果

    鎌滝晋礼, 宮田大嗣, 古閑一憲, 内田儀一郎, 山下大輔, 松崎秀文, 白谷正治

    第58回応用物理学関係連合講演会  2011.3 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  • プラズマCVDで製膜したトレンチ基板上の炭素系薄膜の製膜速度の主放電電力依存性

    浦川達也, 野村卓矢, 松崎秀文, 山下大輔, 内田儀一郎, 古閑一憲, 白谷正治, 節原裕一, 関根誠, 堀勝

    第58回応用物理学関係連合講演会  2011.3 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  • 水素プラズマとグラファイトの相互作用により発生したナノダストの基板へのフラックスの基板バイアス電圧依存性

    西山雄士, 宮田大嗣, 山下大輔, 鎌滝晋礼, 内田儀一郎, 板垣奈穂, 古閑一憲, 白谷正治, 芦川直子, 増崎貴, 西村清彦, 相良明男

    第58回応用物理学関係連合講演会  2011.3 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  • DM-DMOS微粒子プラズマ中におけるAr準安定粒子密度の時間変動

    内田儀一郎, 宮田大嗣, 鎌滝晋礼, 板垣奈穂, 古閑一憲, Nader Sadeghi, 白谷正治

    第58回応用物理学関係連合講演会  2011.3 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  • マルチホロー放電プラズマCVD 法を用いたラジカルフラックス評価

    松永剛明, 川嶋勇毅, 古閑一憲, 中原賢太, 内田儀一郎, 鎌滝晋礼, 板垣奈穂, 白谷正治

    第58回応用物理学関係連合講演会  2011.3 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  • ダブルマルチホロー放電による表面窒化Siナノ粒子含有薄膜のコンビナトリアル成膜

    山本康介, 佐藤宗治, 川嶋勇毅, 中原賢太, 山下大輔, 松崎秀文, 鎌滝晋礼, 板垣奈穂, 内田儀一郎, 古閑一憲, 白谷正治

    第58回応用物理学関係連合講演会  2011.3 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  • SiH4+B10H14マルチホロー放電プラズマCVDによるp型a-Si:Hの製膜

    中原賢太, 川嶋勇毅, 松永剛明, 佐藤 宗治, 山本康介, 中村ウィリアム誠, 内田儀一郎, 山下大輔, 松崎秀文, 板垣奈穂, 古閑一憲, 白谷正治

    第58回応用物理学関係連合講演会  2011.3 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  • Combinatorial study on deposition profiles of silicon thin films deposited using high gas pressure multi-hollow discharge plasma CVD

    金淵元, 松永剛明, 川嶋勇毅, 山下大輔, 鎌滝晋礼, 板垣奈穂, 内田儀一郎, 古閑一憲, 白谷正治

    第58回応用物理学関係連合講演会  2011.3 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  • 量子ドット増感太陽電池の電流密度-電圧特性の膜堆積による影響

    佐藤宗治, 川嶋勇毅, 山本康介, 中原賢太, 松永剛明, 山下大輔, 松崎秀文, 内田儀一郎, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治, 近藤道雄

    第58回応用物理学関係連合講演会  2011.3 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  • 振幅変調パルス放電を用いてトレンチ基板上に堆積させたナノ粒子の付着形状

    宮田大嗣, 西山雄士, 岩下伸也, 松崎秀文, 内田儀一郎, 板垣奈穂, 鎌滝晋礼, 古閑一憲, 白谷正治

    第58回応用物理学関係連合講演会  2011.3 

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    Event date: 2011.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  • Ultra Low Resistive NM Thick AZO Films Deposited by Magnetron Sputtering Using Solid Phase Crystallization International conference

    M. Shiratani, N. Itagaki, K. Kuwahara, K. Nakahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga

    The 4th International Conference on Plasma-Nanotechnology & Science (IC-PLANTS 20)  2011.3 

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    Event date: 2011.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Takayama Public Cultural Hall, Gifu   Country:Japan  

  • Growth enhancement of plants using atmospheric pressure dielectric barrier discharge irradiation International conference

    S. Kitazaki, G. Uchida, K. Koga, M. Shiratani, N. Hayashi

    The 4th International Conference on Plasma-Nanotechnology & Science (IC-PLANTS 20)  2011.3 

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    Event date: 2011.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Takayama Public Cultural Hall, Gifu   Country:Japan  

  • Process window of microcrystalline silicon films deposited using multi-hollow discharge plasma CVD International conference

    T. Matsunaga, Y. Kim, Y. Kawashima, K. Koga, D. Yamashita, K. Nakahara, M. Sato, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani

    The 4th International Conference on Plasma-Nanotechnology & Science (IC-PLANTS 20)  2011.3 

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    Event date: 2011.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Takayama Public Cultural Hall, Gifu   Country:Japan  

  • Effects of substrate temperature on properties of μc-Si:H films deposited using multi-hollow discharge plasma CVD International conference

    Y. Kim, T. Matsunaga, Y. Kawashima, K. Nakahara, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    The 4th International Conference on Plasma-Nanotechnology & Science (IC-PLANTS 20)  2011.3 

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    Event date: 2011.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Takayama Public Cultural Hall, Gifu   Country:Japan  

  • Deposition of P-doped a-Si:H films of a low defect density using SiH4+PH3 multi-hollow discharge plasma CVD International conference

    K. Nakahara, Y. Kawashima, Y. Kim, M. Sato, T. Matsunaga, K. Yamamoto, D. Yamashita, H. Matsuzaki, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    The 4th International Conference on Plasma-Nanotechnology & Science (IC-PLANTS 20)  2011.3 

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    Event date: 2011.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Takayama Public Cultural Hall, Gifu   Country:Japan  

  • Combinatorial deposition of surface nitridated Si nano-particle composite films by double multi-hollow discharges International conference

    M. Sato, K. Yamamoto, Y. Kawashima, K. Nakahara, T. Matsunaga, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. shiratani

    The 4th International Conference on Plasma-Nanotechnology & Science (IC-PLANTS 20)  2011.3 

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    Event date: 2011.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Takayama Public Cultural Hall, Gifu   Country:Japan  

  • Deposition of ?c-Si films using plasma CVD under high gas pressure conditions International conference

    T. Matsunaga, Y. Kawashima, Y. Kim, K. Koga, K. Nakahara, M. Sato, G. Uchida, N. Itagaki, K. Kamataki, M. Shiratani

    3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials(ISPlasma20)  2011.3 

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    Event date: 2011.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:名古屋工業大学   Country:Japan  

  • Atmospheric pressure discharge device for biomedical application International conference

    S. Kitazaki, K. Koga, G. Uchida, M. Shiratani, N. Hayashi

    3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials(ISPlasma20)  2011.3 

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    Event date: 2011.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:名古屋工業大学   Country:Japan  

  • Optical and electrical properties of nitridated Si nano-particle composite thin films deposited by double multi-hollow discharges CVD International conference

    G. Uchida, K. Yamamoto, M. Sato, Y. Kawashima, K. Nakahara, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials(ISPlasma20)  2011.3 

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    Event date: 2011.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:名古屋工業大学   Country:Japan  

  • Generation of nitridated silicon nano-particles by double multi-hollow discharge CVD International conference

    M. Sato, K. Yamamoto, Y. Kawashima, K. Nakahara, K. Kamataki, N. Itagaki, G. Uchida, K. Koga, M. Shiratani

    3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials(ISPlasma20)  2011.3 

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    Event date: 2011.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:名古屋工業大学   Country:Japan  

  • Effect of substrate temperature on microcrystalline silicon thin films deposited using plasma enhanced CVD International conference

    Y. Kim, T. Matsunaga, Y. Kawashima, M. Sato, K. Nakahara, K. Yamamoto, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials(ISPlasma20)  2011.3 

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    Event date: 2011.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:名古屋工業大学   Country:Japan  

  • Deposition of B-doped a-Si:H films using SiH4+B10H14 multi-hollow discharge plasma CVD for pin solar cell International conference

    K. Nakahara, Y. Kawashima, Y. Kim, M. Sato, T. Matsunaga, K. Yamamoto, D. Yamashita, H. Matsuzaki, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials(ISPlasma20)  2011.3 

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    Event date: 2011.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:名古屋工業大学   Country:Japan  

  • Fluctuation of charge on a nano-particle in plasmas and its conseuquences International conference

    M. Shiratani and K. Koga

    2nd International Workshop on Plasma Nano-Interfaces and Plasma Characterization (若手国際ワークショップ)  2011.3 

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    Event date: 2011.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:The hotel Raj   Country:Slovenia  

  • Deposition of Si nano-particle quantum dot thin film by multi-hollow discharge and their application to the third generation hotovoltaics International conference

    G. Uchida, K. Yamamoto, M. Sato, Y. Kawashima, K. Kamataki, N. Itagaki, K. Koga, M. shiratani

    2nd International Workshop on Plasma Nano-Interfaces and Plasma Characterization (若手国際ワークショップ)  2011.3 

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    Event date: 2011.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:The hotel Raj   Country:Slovenia  

  • LHD第一壁へのダストフラックスに対する壁電位の効果

    白谷正治, 宮田大嗣, 西山雄士, 山下大輔, 鎌滝晋礼, 内田儀一朗, 板垣奈穂, 古閑一憲, 芦川直子, 増崎貴, 西村清彦, 相良明男, LHD実験グループ

    核融合科学研究所一般共同研究成果報告会(NIFS)  2011.1 

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    Event date: 2011.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:山陽館, 大分   Country:Japan  

  • Combinatorial study on deposition profiles of silicon thin films deposited using multi-hollow discharge plasma CVD International conference

    Y. Kim, T. Matsunaga, Y. Kawashima, D. Yamashita, K. Kamataki, N. Itagaki, G. Uchida, K. Koga, M. Shiratani

    The 12th International Workshop on Advanced Plasma Processing and Diagnostics  2011.1 

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    Event date: 2011.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:九州大学医学部百年記念講堂   Country:Japan  

  • Main discharge dependence of deposition rate of plasma CVD carbon films de-posited using H-assisted plasma CVD reactor International conference

    T. Urakawa, T. Nomura, H. Matsuzaki, D. Yamashita, G.u Uchida, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    The 12th International Workshop on Advanced Plasma Processing and Diagnostics  2011.1 

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    Event date: 2011.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:九州大学医学部百年記念講堂   Country:Japan  

  • Growth promotion of plants using low pressure O2 RF discharges International conference

    S. Kitazaki, K. Koga, G. Uchida, M. Shiratani, N. Hayashi

    The 12th International Workshop on Advanced Plasma Processing and Diagnostics  2011.1 

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    Event date: 2011.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:九州大学医学部百年記念講堂   Country:Japan  

  • Emission intensity measurements of Ar+H2+C7H8 plasmas using H-assisted plasma CVD International conference

    T. Nomura, T. Urakawa, Y. Korenaga, D. Yamashita, H. Matsuzaki, G. Uchida, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    The 12th International Workshop on Advanced Plasma Processing and Diagnostics  2011.1 

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    Event date: 2011.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:九州大学医学部百年記念講堂   Country:Japan  

  • Surface reactions of P-doped a-Si:H films deposition using SiH4+PH3 International conference

    D. Yamashita, K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, K. Yamamoto, H. Matsuzaki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    The 12th International Workshop on Advanced Plasma Processing and Diagnostics  2011.1 

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    Event date: 2011.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:九州大学医学部百年記念講堂   Country:Japan  

  • Property evaluation of silicon films deposited using high gas pressure multi-hollow discharge plasma CVD International conference

    T. Matsunaga, Y. Kawashima, Y. Kim, K. Koga, K. Nakahara, M. Sato, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani

    The 12th International Workshop on Advanced Plasma Processing and Diagnostics  2011.1 

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    Event date: 2011.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:九州大学医学部百年記念講堂   Country:Japan  

  • Photoluminescence measurement of nitridated Si particles generated by double multi-hollow discharge PECVD International conference

    M. Sato, K. Yamamoto, Y. Kawashima, K. Nakahara, T. Matsunaga, K. Kamataki, N. Itagaki, G. Uchida, K. Koga, M. Shiratani

    The 12th International Workshop on Advanced Plasma Processing and Diagnostics  2011.1 

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    Event date: 2011.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:九州大学医学部百年記念講堂   Country:Japan  

  • Optical bandgap energy of B-doped a-Si:H films depositedby SiH4+B10H14multi-hollow discharge plasma CVD International conference

    K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, K. Yamamoto, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    The 12th International Workshop on Advanced Plasma Processing and Diagnostics  2011.1 

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    Event date: 2011.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:九州大学医学部百年記念講堂   Country:Japan  

  • Low resistivity AZO films fabricated on solid phase crystallized ZnO buffer layer: solid phase crystallization temperature dependence International conference

    K. Kuwahara, N. Itagaki, K. Nakahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani

    The 12th International Workshop on Advanced Plasma Processing and Diagnostics  2011.1 

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    Event date: 2011.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:九州大学医学部百年記念講堂   Country:Japan  

  • Generation of nitridated Si particle composite films by double multi-hollow plasma CVD method International conference

    K. Yamamoto, Y. Kawashima, M. Sato, K. Nakahara, T. Matsunaga, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, G. Uchida, K. Koga, M. Shiratani

    The 12th International Workshop on Advanced Plasma Processing and Diagnostics  2011.1 

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    Event date: 2011.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:九州大学医学部百年記念講堂   Country:Japan  

  • Flux measurements of carbon dust particles towards biased substrates in H2 helicon discharge plasmas International conference

    K. Nishiyama, H. Miyata, D. Yamashita, K. Kamataki, G.u Uchida, N. Itagaki, K. Koga, M. Shiratani

    The 12th International Workshop on Advanced Plasma Processing and Diagnostics  2011.1 

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    Event date: 2011.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:九州大学医学部百年記念講堂   Country:Japan  

  • Electrical characteristics of Si nanoparticles/ruthenium dye hybrid sensitized solar cells International conference

    Y. Kawashima, K. Yamamoto, M. Sato, K. Nakahara, T. Matsunaga, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, M. Kondo

    The 12th International Workshop on Advanced Plasma Processing and Diagnostics  2011.1 

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    Event date: 2011.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:九州大学医学部百年記念講堂   Country:Japan  

  • Deposition of SiOx-CH3 nano-particles on trench substrates using pulse RF discharges International conference

    H. Miyata, S. Iwashita, K. Nishiyama, D. Yamashita, H. Matsuzaki, G. Uchida, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani

    The 12th International Workshop on Advanced Plasma Processing and Diagnostics  2011.1 

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    Event date: 2011.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:九州大学医学部百年記念講堂   Country:Japan  

  • Deposition rate of SiH4+PH3 multi-hollow plasma CVD a-Si:H films

    K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, K. Yamamoto, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    第20回日本MRS学術シンポジウム  2010.12 

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    Event date: 2010.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:横浜市開港記念会館   Country:Japan  

  • Influence Of Atmospheric Pressure Torch Plasma Irradiation On Plant Growth

    Y. Akiyoshi, A. Nakahigashi, N. Hayashi, Satosi Kitazaki, K. Koga, M. Shiratani

    第20回日本MRS学術シンポジウム  2010.12 

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    Event date: 2010.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:横浜市開港記念会館   Country:Japan  

  • Microcrystalline silicon films deposited by using multi-hollow discharge plasma CVD under high pressure depletion conditions

    T. Matsunaga, Y. Kawashima, K. Koga, K. Nakahara, G. Uchida, N. Itagaki, K. Kamataki, M. Shiratani

    第20回日本MRS学術シンポジウム  2010.12 

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    Event date: 2010.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:横浜市開港記念会館   Country:Japan  

  • Investigation of Interaction between of Growth of Nano Particles and Plasma Fluctuations in Plasma CVD

    K. Kamataki, H. Miyata, K. Koga, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani

    第20回日本MRS学術シンポジウム  2010.12 

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    Event date: 2010.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:横浜市開港記念会館   Country:Japan  

  • Generation of nitridated silicon particles and the application to solar cell

    G. Uchida, K. Yamamoto, Y. Kawashima, M. Sato, K. Nakahara, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    第20回日本MRS学術シンポジウム  2010.12 

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    Event date: 2010.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:横浜市開港記念会館   Country:Japan  

  • マルチホロー放電プラズマCVD を用いた第三世代太陽電池用結晶シリコンナノ粒子のサイズ制御

    川嶋勇毅, 佐藤宗治, 山本康介, 中原賢太, 松永剛明, 山下大輔, 松崎秀文, 内田儀一郎, 板垣奈穂, 古閑一憲, 鎌滝晋礼, 近藤道雄, 白谷正治

    プラズマ・核融合学会 九州・沖縄・山口支部 第14回 支部大会  2010.12 

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    Event date: 2010.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • 大気圧DBDを用いた植物および酵母の成長促進

    北﨑訓, 古閑一憲, 白谷正治, 林信哉

    プラズマ・核融合学会 九州・沖縄・山口支部 第14回 支部大会  2010.12 

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    Event date: 2010.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • 水素原子源付プラズマCVD装置で生成したH2+Ar+C7H8プラズマの発光強度計測

    野村卓矢, 浦川達也, 山下大輔, 松崎秀文, 内田儀一郎, 古閑一憲, 白谷正治, 節原裕一, 堀勝, 関根誠

    プラズマ・核融合学会 九州・沖縄・山口支部 第14回 支部大会  2010.12 

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    Event date: 2010.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • プラズマCVDで形成したカーボン薄膜のトレンチ基板上への成膜形状の主放電電力依存性

    浦川達也, 野村卓矢, 松崎秀文, 山下大輔, 内田儀一郎, 古閑一憲, 白谷正治, 節原裕一, 関根誠, 堀勝

    プラズマ・核融合学会 九州・沖縄・山口支部 第14回 支部大会  2010.12 

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    Event date: 2010.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • 水素プラズマとグラファイトとの相互作用により発生したダストのフラックスの壁電位依存性

    西山雄士, 宮田大嗣, 山下大輔, 鎌滝晋礼, 内田儀一郎, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会 九州・沖縄・山口支部 第14回 支部大会  2010.12 

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    Event date: 2010.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • 振幅変調パルス放電を用いた微細パターン基板へのナノ粒子の堆積

    宮田大嗣, 西山雄士, 岩下伸也, 山下大輔, 松崎秀文, 鎌滝晋礼, 内田儀一郎, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会 九州・沖縄・山口支部 第14回 支部大会  2010.12 

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    Event date: 2010.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • マルチホロー放電プラズマCVDを用いたμc-Si:Hのコンビナトリアル製膜によるSiH3,Hフラックス解析

    松永剛明, 川嶋勇毅, 金淵元, 古閑一憲, 中原賢太, 佐藤宗治, 山下大輔, 内田儀一郎, 板垣奈穂, 白谷正治

    プラズマ・核融合学会 九州・沖縄・山口支部 第14回 支部大会  2010.12 

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    Event date: 2010.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • プラズマCVD中のナノ粒子成長に対するプラズマ揺動の影響

    鎌滝晋礼, 宮田大嗣, 古閑一憲, 内田儀一郎, 板垣奈穂, 山下大輔, 松崎秀文, 白谷正治

    プラズマ・核融合学会 九州・沖縄・山口支部 第14回 支部大会  2010.12 

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    Event date: 2010.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • ダブルマルチホロー放電プラズマを用いた表面窒化Siナノ粒子含有薄膜の作製

    山本康介, 佐藤宗治, 川嶋勇毅, 中原賢太, 山下大輔, 松崎秀文, 板垣奈穂, 鎌滝晋礼, 内田儀一郎, 古閑一憲, 白谷正治

    プラズマ・核融合学会 九州・沖縄・山口支部 第14回 支部大会  2010.12 

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    Event date: 2010.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • ダブルマルチホロー放電によるN2/SiH4プラズマの独立制御

    佐藤宗治, 山本康介, 川嶋勇毅, 中原賢太, 山下大輔, 松崎秀文, 板垣奈穂, 鎌滝晋礼, 内田儀一郎, 古閑一憲, 白谷正治

    プラズマ・核融合学会 九州・沖縄・山口支部 第14回 支部大会  2010.12 

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    Event date: 2010.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • スパッタリング法を用いた新規固相結晶化法によるエピタキシャル酸化亜鉛薄膜の作製

    桑原和成, 板垣奈穂, 中原賢太, 山下大輔, 鎌滝晋礼, 内田儀一郎, 古閑一憲, 白谷正治

    プラズマ・核融合学会 九州・沖縄・山口支部 第14回 支部大会  2010.12 

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    Event date: 2010.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • Substrate temperature dependence of microcrystalline silicon deposition by multi-hollow discharge plasma CVD

    金淵元, 松永剛明, 川嶋勇毅, 中原賢太, 鎌滝晋礼, 内田儀一郎, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会 九州・沖縄・山口支部 第14回 支部大会  2010.12 

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    Event date: 2010.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • SiH4+B10H14マルチホロー放電プラズマCVDを用いたBドーピングa-Si:Hの堆積

    中原賢太, 川嶋勇毅, 松永剛明, 佐藤宗治, 山本康介, 山下大輔, 松崎秀文, 内田儀一郎, 板垣奈穂, 古閑一憲, 白谷正治

    プラズマ・核融合学会 九州・沖縄・山口支部 第14回 支部大会  2010.12 

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    Event date: 2010.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • A novel control method of nano-strucutre of oxide films using sputtering deposition (Keynote Speech) Invited International conference

    M. Shiratani, K. Koga, G. Uchida, N. Itagaki, K. Kamataki

    The Second International Symposium on Plasma Nanoscience (iPlasmaNano-II)  2010.12 

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    Event date: 2010.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Murramarang Resort, New South Wales   Country:Australia  

  • 酸素および水プラズマによる植物の成長促進

    中東朱里, 秋吉雄介, 林信哉, 白谷正治, 古閑一憲

    第27回プラズマ・核融合学会年会  2010.11 

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    Event date: 2010.11 - 2010.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:札幌国際プラザ   Country:Japan  

  • シリコンナノ粒子とRu色素を用いた増感太陽電池の電流密度-電圧特性

    川嶋勇毅, 佐藤宗治, 山本康介, 中原賢太, 松永剛明, 山下大輔, 松崎秀文, 内田儀一郎, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治, 近藤道雄

    平成22年度応用物理学会九州支部学術講演会  2010.11 

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    Event date: 2010.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • 水プラズマによるチオール化合物の酸化還元特性

    林信哉, 中東朱里, 北崎訓, 古閑一憲, 白谷正治

    平成22年度応用物理学会九州支部学術講演会  2010.11 

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    Event date: 2010.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • 活性酸素種を用いた植物の成長促進特性

    北崎訓, 古閑一憲, 白谷正治, 林信哉

    平成22年度応用物理学会九州支部学術講演会  2010.11 

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    Event date: 2010.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • 異方性プラズマCVDで堆積したカーボン膜のエッチングレート

    山下大輔, 浦川達也, 野村卓矢, 内田儀一郎, 古閑一憲, 白谷正治, 節原裕一, 関根誠, 堀勝

    平成22年度応用物理学会九州支部学術講演会  2010.11 

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    Event date: 2010.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • プラズマCVDカーボン膜の堆積速度の基板配置位置依存性

    浦川達也, 野村卓矢, 松崎秀文, 山下大輔, 内田儀一郎, 古閑一憲, 白谷正治, 節原裕一, 関根誠, 堀勝

    平成22年度応用物理学会九州支部学術講演会  2010.11 

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    Event date: 2010.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • Ar+H2+C7H8プラズマの水素発光強度計測

    野村卓矢, 浦川達也, 山下大輔, 松崎秀文, 内田儀一郎, 古閑一憲, 白谷正治, 節原裕一, 関根誠, 堀勝

    平成22年度応用物理学会九州支部学術講演会  2010.11 

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    Event date: 2010.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • 微細トレンチ基板へのナノ粒子の堆積

    西山雄士, 宮田大嗣, 山下大輔, 鎌滝晋礼, 内田儀一郎, 板垣奈穂, 古閑一憲, 白谷正治

    平成22年度応用物理学会九州支部学術講演会  2010.11 

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    Event date: 2010.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • 窒素原子を介した酸化亜鉛薄膜の固相結晶化におけるアニール温度依存性

    桑原和成, 板垣奈穂, 中原賢太, 山下大輔, 鎌滝晋礼, 内田儀一郎, 古閑一憲, 白谷正治

    平成22年度応用物理学会九州支部学術講演会  2010.11 

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    Event date: 2010.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • 高ガス圧力条件における微結晶シリコン薄膜の作製

    松永剛明, 川嶋勇毅, 古閑一憲, 中原賢太, 内田儀一郎, 鎌滝晋礼, 板垣奈穂, 白谷正治

    平成22年度応用物理学会九州支部学術講演会  2010.11 

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    Event date: 2010.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • マルチホロー放電プラズマCVD法で堆積したPドープa-Si:H膜の導電率

    中原賢太, 川嶋勇毅, 松永剛明, 佐藤宗治, 山本康介, 中村ウィリアム誠, 内田儀一郎, 山下大輔, 松崎秀文, 板垣奈穂, 古閑一憲, 白谷正治

    平成22年度応用物理学会九州支部学術講演会  2010.11 

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    Event date: 2010.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • ダブルマルチホロー放電を用いた表面窒化シリコン粒子の生成

    山本康介, 佐藤宗治, 川嶋勇毅, 中原賢太, 山下大輔, 松崎秀文, 鎌滝晋礼, 板垣奈穂, 内田儀一郎, 古閑一憲, 白谷正治

    平成22年度応用物理学会九州支部学術講演会  2010.11 

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    Event date: 2010.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • Generation of nitridated silicon nanoparticles and the application to solar cell (Invited) Invited International conference

    G. Uchida, K. Yamamoto, Y. Kawashima, M. Sato, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    The 1st Korean-Japan Symposium on Surface Technology  2010.11 

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    Event date: 2010.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Premier Songdo Park Hotel, Inchon, Korea   Country:Korea, Republic of  

  • Fluctuation Control for Plasma Nanotechnologies (Keynote Speech) Invited International conference

    M. Shiratani, K. Koga, G. Uchida, N. Itagaki, K. Kamataki

    International technical conference of IEEE Region 10  2010.11 

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    Event date: 2010.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Substrate temperature dependence of feature profile of carbon films on substrate with submicron trenches International conference

    T. Nomura, T. Urakawa, Y. Korenaga, D. Yamashita, H. Matsuzaki, K. Koga, M. Shiratani

    International technical conference of IEEE Region 10  2010.11 

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    Event date: 2010.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Redox Characteristics of Amino Acids Using Low Pressure Water Vapor RF Plasma International conference

    Y. Akiyoshi, A. Nakahigashi, N. Hayashi, S. Kitazaki, T. Iwao, K. Koga, M. Shiratani

    International technical conference of IEEE Region 10  2010.11 

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    Event date: 2010.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Photoluminescence of Si nanoparticles synthesized using multi-hollow discharge plasma CVD International conference

    Y. Kawashima, K. Yamamoto, M. Sato, T. Matsunaga, K. Nakahara, D. Yamashita, H. Matsuzaki, G. Uchida, K. Koga, M. Shiratani

    International technical conference of IEEE Region 10  2010.11 

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    Event date: 2010.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Growth Stimulation of Radish Sprouts Using Discharge Plasmas International conference

    S. Kitazaki, D. Yamashita, H. Matsuzaki, G.u Uchida, K. Koga, M. Shiratani

    International technical conference of IEEE Region 10  2010.11 

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    Event date: 2010.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Effects of Ar addition on breakdown voltage in a Si(CH3)2(OCH3)2 RF discharge International conference

    G. Uchida, S. Nunomutra, H. Miyata, S. Iwashita, Dsaisuke Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    International technical conference of IEEE Region 10  2010.11 

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    Event date: 2010.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Effects of Amplitude Modulation of rf Discharge Voltage on Growth of Nano-Particles in Reactive Plasmas International conference

    K. Kamataki, H. Miyata, K. Koga, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani

    International technical conference of IEEE Region 10  2010.11 

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    Event date: 2010.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Deposition profiles of microcrystalline silicon films using multi-hollow discharge plasma CVD International conference

    T. Matsunaga, Y. Kawashima, K. Koga, K. Nakahara, W. M. Nakamura, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani

    International technical conference of IEEE Region 10  2010.11 

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    Event date: 2010.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Cluster-Free B-Doped a-Si:H Films Deposited Using SiH4 + B10H14 Multi-Hollow Discharges International conference

    K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, K. Yamamoto, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    International technical conference of IEEE Region 10  2010.11 

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    Event date: 2010.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congress Center   Country:Japan  

  • Cluster-free p-type a Si:H films deposited using SiH4 + B10H14 multi-hollow discharges International conference

    K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, K. Yamamoto, W. M. Nakamura, D. Yamashita, H. Matsuzaki, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    The 4th International Student Workshop on Electrical Engineering  2010.11 

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    Event date: 2010.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場   Country:Japan  

  • Substrate temperature dependence of feature profile plasma CVD carbon films on trenched substrates International conference

    T. Nomura, T. Urakawa, Y. Korenaga, D. Yamashita, H. Matsuzaki, K. Koga, M. Shiratani, Y. Stshuhara, M. Sekine, M. Hori

    The 4th International Student Workshop on Electrical Engineering  2010.11 

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    Event date: 2010.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場   Country:Japan  

  • Growth stimulation of sprouts using plasma irradiation International conference

    S. Kitazaki, K. Koga, M. Shiratani, N. Hayashi

    The 4th International Student Workshop on Electrical Engineering  2010.11 

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    Event date: 2010.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場   Country:Japan  

  • Novel solar cells using Si nanoparticles International conference

    Y. Kawashima, K. Yamamoto, M. Sato, T. Matsunaga, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    The 4th International Student Workshop on Electrical Engineering  2010.11 

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    Event date: 2010.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場   Country:Japan  

  • Evaluation of microcrystalline silicon filmas deposited by using multi-hollow discharge plasma CVD International conference

    T. Matsunaga, Y. Kawashima, K. Koga, M. Sato, K. Nakahara, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani

    The 4th International Student Workshop on Electrical Engineering  2010.11 

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    Event date: 2010.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:福岡国際会議場   Country:Japan  

  • In-situ collection of dust particles produced due to interaction between helicon discharge plasmasand graphite on substrates with bias voltage International conference

    M. Shiratani, H. Miyata, K. Nishiyama, S. Iwashita, D.Yamashita, H. Matsuzaki, G. Uchida, N. Itagaki, K. Kamataki, K. Koga, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara

    11th Workshop on Fine Particle Plasmas 第11回 微粒子プラズマ研究会  2010.11 

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    Event date: 2010.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:核融合科学研究所, 岐阜   Country:Japan  

  • Generation of nitridated silicon particle in SiH4/H2 and N2 multi-hollow discharges International conference

    G. Uchida, K. Yamamoto, Y. Kawashima, M. Sato, K. Nakahara, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    11th Workshop on Fine Particle Plasmas 第11回 微粒子プラズマ研究会  2010.11 

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    Event date: 2010.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:核融合科学研究所, 岐阜   Country:Japan  

  • Manipulation of Nano-objects Uusing Plasmas for a Plasma Nano-factory (Invited) Invited International conference

    M. Shiratani, K. Koga, G.u Uchida, N. Itagaki, K. Kamataki

    The 11th Asia Pacific Physics Conference (APPC11)  2010.11 

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    Event date: 2010.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Shanghai, China   Country:China  

    新しいボトムアッププロセスとしてナノ粒子の操作をプラズマを用いて行う新概念の提案とその実験的検証に関する報告を行った。

  • Substrate Temperature Dependence of Sticking Probability of SiOx-CH3 Nano-Particles International conference

    H. Miyata, K. Nishiyama, S. Iwashita, H. Matsuzaki, D. Yamashita, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    2010 International Symposium on Dry Process Program (DPS)  2010.11 

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    Event date: 2010.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:東京工業大学   Country:Japan  

  • Optical and Electrical Properties of Particle Composite Thin Films deposited in SiH4/H2 and N2 Multi-Hollow Discharges International conference

    G. Uchida, M. Sato, Y. Kawashima, K. Yamamoto, K. Nakahara, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, M. Kondo

    第23回マイクロプロセス・ナノテクノロジー国際会議(MNC 2010)  2010.11 

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    Event date: 2010.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:リーガロイヤルホテル小倉   Country:Japan  

  • アモルファス相からの固相結晶化による酸化亜鉛薄膜の作製

    板垣奈穂, 桑原和成, 鎌滝晋礼, 内田儀一郎, 古閑一憲, 白谷正治

    第26回九州・山口プラズマ研究会  2010.11 

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    Event date: 2010.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:山陽館, 大分   Country:Japan  

  • 窒化シリコン微粒子の生成と太陽電池への応用

    内田儀一郎, 川嶋勇毅, 山本康介, 佐藤宗治, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    第26回九州・山口プラズマ研究会  2010.11 

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    Event date: 2010.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:山陽館, 大分   Country:Japan  

  • Combinatorial plasma CVD of Si thin films with a multihollow discharge plasma CVD reactor International conference

    M. Shiratani, K. Koga, T. Matsunaga, Y. Kawashima, W. M. Nakamura, G. Uchida, N. Itagaki

    AVS 57th International Symposium & Exhibition  2010.10 

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    Event date: 2010.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Albuquerque Convention Center, Albuquerque   Country:Other  

  • Scalable atmospheric DBD device for biomedical processing International conference

    S. Kitazaki, T. Iwao, G. Uchida, K. Koga, M. Shiratani, N. Hayashi

    AVS 57th International Symposium & Exhibition  2010.10 

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    Event date: 2010.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Albuquerque Convention Center, Albuquerque   Country:Other  

  • Carrier generation in Si quantum dots-sensitized solar cell International conference

    Y. Kawashima, K. Yamamoto, M. Sato, K. Nakahara, T. Matsunaga, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, M. Kondo

    Third International Workshop on Thin Film Silicon Solar Cells (IWTFSSC3)  2010.10 

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    Event date: 2010.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:長崎全日空ホテル   Country:Japan  

  • Rapid transport of nano-particles as a key technology for fabrication of quantum-dot solar cells International conference

    K. Nishiyama, S. Iwashita, H. Miyata, H. Matsuzaki, K. Koga, M. Shiratani

    Third International Workshop on Thin Film Silicon Solar Cells (IWTFSSC3)  2010.10 

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    Event date: 2010.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:長崎全日空ホテル   Country:Japan  

  • Raman spectroscopy of carbon films deposited by plasma anisotorpic CVD International conference

    T. Nomura, T. Urakawa, D. Yamashita, H. Matsuzaki, G. Uchida, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    Third International Workshop on Thin Film Silicon Solar Cells (IWTFSSC3)  2010.10 

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    Event date: 2010.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:長崎全日空ホテル   Country:Japan  

  • Control of deposition profile of carbon films on nano-patterned substrates using H-assisted plasma CVD International conference

    T. Urakawa, T. Nomura, D. Yamashita, H. Matsuzaki, G. Uchida, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    Third International Workshop on Thin Film Silicon Solar Cells (IWTFSSC3)  2010.10 

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    Event date: 2010.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:長崎全日空ホテル   Country:Japan  

  • Atmospheric Pressure Discharge Treatment of TiO2 Layer of quantum dot/dye sensitized solar cells International conference

    S. Kitazaki, Y. Kawashima, G. Uchida, K. Koga, M. Shiratani

    Third International Workshop on Thin Film Silicon Solar Cells (IWTFSSC3)  2010.10 

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    Event date: 2010.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:長崎全日空ホテル   Country:Japan  

  • ZnO transparent conductive films prepared by solid-phase crystallization from amorphous phase International conference

    K. Kuwahara, N. Itagaki, K. Nakahara, D. Yamashita, G. Uchida, K. Koga, M. Shiratani

    Third International Workshop on Thin Film Silicon Solar Cells (IWTFSSC3)  2010.10 

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    Event date: 2010.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:長崎全日空ホテル   Country:Japan  

  • Production of nitridated silicon particles for quantum dot solar cell International conference

    K. Yamamoto, Y. Kawashima, M. Sato, K. Nakahara, T. Matsunaga, D. Yamashita, H.Matsuzaki, K. Kamataki, N. Itagaki, G. Uchida, K. Koga, M. Shiratani, M. Kondo

    Third International Workshop on Thin Film Silicon Solar Cells (IWTFSSC3)  2010.10 

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    Event date: 2010.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:長崎全日空ホテル   Country:Japan  

  • Optical and electrical properties of microcrystalline silicon thin films deposited by mutli-hollow discharge plasma CVD International conference

    T. Matsunaga, Y. Kawashima, K. Koga, K. Nakahara, M. Sato, D. Yamashita, G. Uchida, N. Itagaki, M. Shiratani

    Third International Workshop on Thin Film Silicon Solar Cells (IWTFSSC3)  2010.10 

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    Event date: 2010.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:長崎全日空ホテル   Country:Japan  

  • Effects of H2 plasma irradiation to TiO2 on quantum dot/dye-sensitized solar cells International conference

    H. Miyata, Y. Kawashima, K. Yamamoto, M. Sato, K. Nakahara, T. Matsunaga, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, M. Kondo

    Third International Workshop on Thin Film Silicon Solar Cells (IWTFSSC3)  2010.10 

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    Event date: 2010.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:長崎全日空ホテル   Country:Japan  

  • Deposition of cluster-free B-doped a-Si:H films using SiH4+B10H14 multi-hollow discharge plasma CVD International conference

    K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, K. Yamamoto, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    Third International Workshop on Thin Film Silicon Solar Cells (IWTFSSC3)  2010.10 

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    Event date: 2010.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:長崎全日空ホテル   Country:Japan  

  • Fabrication of a-ZnON films by Ar/N2 sputtering for solid-phase crystallization of ZnO International conference

    N. Itagaki, K. Kuwahara, K. Nakahara, D. Yamashita, K. Kamataki, G. Uchida, K. Koga, M. Shiratani

    63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas (ICRP)  2010.10 

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    Event date: 2010.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Paris   Country:France  

  • Plasma parameter measurements of Ar+H2+C7H8 plasmas in H-assisted plasma CVD reactor International conference

    T. Nomura, T. Urakawa, Y. Korenaga, D. Yamashita, H. Matsuzaki, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas (ICRP)  2010.10 

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    Event date: 2010.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Paris   Country:France  

  • Redox Characteristics of Thiol of Plants Using Radicals Produced by RF Discharge International conference

    A. Nakahigashi, Y. Akiyoshi, N. Hayashi, S. Kitazaki, K. Koga, M. Shiratani

    63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas (ICRP)  2010.10 

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    Event date: 2010.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Paris   Country:France  

  • Generation of nitridated silicon particles and their thin film deposition using double multi-hollow discharges International conference

    G. Uchida, M. Sato, Y. Kawashima, K. Nakahara, K. Yamamoto, T. Matsunaga, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas (ICRP)  2010.10 

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    Event date: 2010.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Paris   Country:France  

  • Deposition rate enhancement of cluster-free P-doped a-Si:H films using multi-hollow discharge plasma CVD method International conference

    K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, K. Yamamoto, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas (ICRP)  2010.10 

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    Event date: 2010.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Paris   Country:France  

  • Combinatorial deposition of microcrystalline Si films using multi-hollow discharge plasma CVD International conference

    T. Matsunaga, Y. Kawashima, K. Koga, W. M. Nakamura, K. Nakahara, H. Matsuzaki, D. Yamashita, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani

    63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas (ICRP)  2010.10 

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    Event date: 2010.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Paris   Country:France  

  • Carbon dust particles generated due to H2 plasma-carbon wall interaction International conference

    H. Miyata, K. Nishiyama, S. Iwashita, H. Matsuzaki, D. Yamashita, G. Uchida, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, LHD experimental group

    63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas (ICRP)  2010.10 

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    Event date: 2010.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Paris   Country:France  

  • SiH4+ B10H14マルチホロー放電プラズマCVD法によるBドープa-Si:Hの製膜

    中原賢太, 川嶋勇毅, 松永剛明, 佐藤宗治, 山本康介, 中村ウィリアム誠, 山下大輔, 松崎秀文, 内田儀一郎, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    第4回プラズマエレクトロニクスインキュベーションホール  2010.9 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:国立中央青少年交流の家, 静岡   Country:Japan  

  • ダブルマルチホロー放電プラズマを用いた表面窒化シリコン粒子の生成

    山本康介, 川嶋勇毅, 佐藤宗治, 中原賢太, 松永剛明, 山下大輔, 松崎秀文, 内田儀一郎, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    第4回プラズマエレクトロニクスインキュベーションホール  2010.9 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:国立中央青少年交流の家, 静岡   Country:Japan  

  • 高ガス圧力条件における微結晶シリコン薄膜の結晶化率分布

    松永剛明, 川嶋勇毅, 古閑一憲, 中原賢太, 佐藤宗治, 山下大輔, 内田儀一郎, 鎌滝晋礼, 板垣菜穂, 白谷正治

    第4回プラズマエレクトロニクスインキュベーションホール  2010.9 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:国立中央青少年交流の家, 静岡   Country:Japan  

  • 窒素原子を介した固相結晶化法による酸化亜鉛薄膜の作製

    板垣奈穂, 桑原和成, 中原賢太, 山下大輔, 鎌滝晋礼, 内田儀一郎, 古閑一憲, 白谷正治

    第71回応用物理学会学術講演会  2010.9 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:長崎大学   Country:Japan  

  • 酸素プラズマを用いたスプラウトの成長促進

    北崎訓, 岩尾拓朗, 古閑一憲, 白谷正治, 林信哉

    第71回応用物理学会学術講演会  2010.9 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:長崎大学   Country:Japan  

  • プラズマCVD炭素薄膜の製膜形状の基板温度依存性

    野村卓矢, 浦川達也, 是永有輝, 山下大輔, 松崎秀文, 古閑一憲, 白谷正治, 節原裕一, 関根誠, 堀勝

    第71回応用物理学会学術講演会  2010.9 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:長崎大学   Country:Japan  

  • ナノ粒子増感太陽電池の光電流の照射光強度依存性

    川嶋勇毅, 佐藤宗治, 山本康介, 中原賢太, 松永剛明, 松崎秀文, 内田儀一郎, 近藤道雄, 山下大輔, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    第71回応用物理学会学術講演会  2010.9 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:長崎大学   Country:Japan  

  • 反応性プラズマ中のナノ粒子成長に対する電力摂動の効果

    鎌滝晋礼, 宮田大嗣, 古閑一憲, 内田儀一郎, 板垣奈穂, 山下大輔, 松崎秀文, 白谷正治

    第71回応用物理学会学術講演会  2010.9 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:長崎大学   Country:Japan  

  • 水素プラズマとグラファイトの相互作用で発生したダストの壁へのフラックスに対する壁電位の影響

    宮田大嗣, 西山雄士, 岩下伸也, 松崎秀文, 山下大輔, 鎌滝晋礼, 内田儀一朗, 板垣奈穂, 古閑一憲, 白谷正治, 芦川直子, 増崎貴, 西村清彦, 相良明男

    第71回応用物理学会学術講演会  2010.9 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:長崎大学   Country:Japan  

  • 高ガス圧力微結晶シリコン製膜条件における結晶化率2次元分布

    松永剛明, 川嶋勇毅, 古閑一憲, 中原賢太, 佐藤宗治, 山下大輔, 内田儀一郎, 鎌滝晋礼, 板垣奈穂, 白谷正治

    第71回応用物理学会学術講演会  2010.9 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:長崎大学   Country:Japan  

  • SiH4+ B10H14マルチホロー放電プラズマCVD法を用いたBドープa-Si:Hの製膜

    中原賢太, 川嶋勇毅, 松永剛明, 佐藤宗治, 山本康介, 中村ウィリアム誠, 内田儀一郎, 板垣奈穂, 古閑一憲, 白谷正治, 山下大輔, 松崎秀文

    第71回応用物理学会学術講演会  2010.9 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:長崎大学   Country:Japan  

  • ダブルマルチホロー放電によるシリコン粒子の表面窒化

    内田儀一郎, 佐藤宗治, 川嶋勇毅, 中原賢太, 山本康介, 山下大輔, 松崎秀文, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    第71回応用物理学会学術講演会  2010.9 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:長崎大学   Country:Japan  

  • シリコンナノ微粒子の生成と太陽電池への応用

    内田儀一郎, 川嶋勇毅, 山本康介, 佐藤宗治, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    平成22年度東北大学電気通信研究所共同プロジェクト研究会「微粒子プラズマの応用に関する基礎的研究」  2010.8 

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    Event date: 2010.8

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:ホテルクレセント, 仙台   Country:Japan  

  • Control of nano-block transport using amplitude modulated pulse rf discharges (selected as a presentation in Hot Topic Session) International conference

    S. Iwashita, H. Miyata, K. Koga, M. Shiratani, U. Czarnetzki

    20th Europhysics Conference on Atomic and Molecular Physics of Ionized Gases (ESCAMPIG2010)  2010.7 

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    Event date: 2010.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Novi Sad, Serbia   Country:Other  

  • Evolution of green plasma nanotechnology for harvesting energy devices (Invited) Invited International conference

    M. Shiratani, G. Uchida, K. Koga

    The 11th International Workshop on Advanced Plasma Processing and Diagnostics  2010.7 

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    Event date: 2010.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ramada Jeju Hotel   Country:Korea, Republic of  

  • Stimulation of plant growth using discharges plasmas International conference

    S. Kitazaki, T. Iwao, K. Koga, M. Shiratai, N. Hayashi

    The 11th International Workshop on Advanced Plasma Processing and Diagnostics  2010.7 

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    Event date: 2010.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ramada Jeju Hotel   Country:Korea, Republic of  

  • Generation of Si particles and their nitridation using double multihollow discharges International conference

    M. Sato, Y. Kawashima, K. Yamamoto, K. Nakahara, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, G. Uchida, K. Koga, M. Shiratani, M. Kondo

    The 11th International Workshop on Advanced Plasma Processing and Diagnostics  2010.7 

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    Event date: 2010.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ramada Jeju Hotel   Country:Korea, Republic of  

  • Deposition of cluster-free P-doped a-Si:H films using a multi-hollow discharge plasma CVD method International conference

    K. Nakahara, Y. Kawashima, T. Matsunaga, K. Koga, M. Shiratani

    35th IEEE Photovoltaic Specialists Conference (PVSC)  2010.6 

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    Event date: 2010.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Honolulu, Hawaii   Country:Other  

  • Si quantum dot-sensitized solar cells using Si nanoparticles produced by plasma CVD International conference

    Y. Kawashima, K. Nakahara, T. Matsunaga, H. Sato, K. Koga, M. Shiratani, M. Kondo

    35th IEEE Photovoltaic Specialists Conference (PVSC)  2010.6 

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    Event date: 2010.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Honolulu, Hawaii   Country:Other  

  • SiH4+PH3マルチホロー放電プラズマCVDによるn型a-Si:Hの製膜

    中原賢太, 川嶋勇毅, 松永剛明, 佐藤宗治, 内田儀一郎, 板垣奈穂, 古閑一憲, 白谷正治

    九州表面・真空研究会2010(兼第15回九州薄膜表面研究会)  2010.6 

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    Event date: 2010.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • マルチホロー放電プラズマCVD法を用いた 微結晶シリコン薄膜の作製と膜質評価

    松永剛明, 川嶋勇毅, 板垣奈穂, 鎌滝晋礼, 内田儀一郎, 古閑一憲, 白谷正治

    九州表面・真空研究会2010(兼第15回九州薄膜表面研究会)  2010.6 

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    Event date: 2010.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • ナノ粒子含有シリコン薄膜の光学特性

    佐藤宗治, 川嶋勇毅, 山本康介, 中原賢太, 板垣奈穂, 鎌滝晋礼, 内田儀一郎, 古閑一憲, 白谷正治

    九州表面・真空研究会2010(兼第15回九州薄膜表面研究会)  2010.6 

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    Event date: 2010.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • Flux Measurements of Dust Particles during Hydrogen Discharges in LHD International conference

    S. Iwashita, H. Miyata, Y. Yamada, K. Koga, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, LHD experimental group

    19th International Conference on Plasma Surface Interactions in Controlled Fusion Devices (PSI2010)  2010.5 

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    Event date: 2010.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:San Diego, California   Country:Other  

  • インジウム系太陽電池CIGSの気管内投与後の肺および血清金属濃度

    田中昭代, 平田美由紀, 清原裕, 古閑一憲, 白谷正治

    第80回日本衛生学会総会  2010.5 

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    Event date: 2010.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:仙台国際センター   Country:Japan  

  • SiH4+PH3マルチホロー放電プラズマCVDによるPドープa-Si:Hの製膜

    中原賢太, 佐藤宙, 川嶋勇毅, 古閑一憲, 白谷正治

    春季第57回応用物理学関係連合講演会  2010.3 

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    Event date: 2010.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  • 放電電力摂動のイオン密度への影響

    宮田大嗣, 岩下伸也, 山田泰之, 古閑一憲, 白谷正治

    春季第57回応用物理学関係連合講演会  2010.3 

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    Event date: 2010.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  • 多面体ホルダによるLHD内ダストのin-situ捕集

    岩下伸也, 宮田大嗣, 山田泰之, 古閑一憲, 白谷正治, 芦川直子, 増崎 貴, 西村清彦, 相良明男, LHD実験グループ

    春季第57回応用物理学関係連合講演会  2010.3 

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    Event date: 2010.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  • Ar+H2+C7H8 プラズマの電子密度計測

    野村卓矢, 是永有輝, 松崎秀文, 古閑一憲, 白谷正治, 節原裕一, 関根 誠, 堀勝

    春季第57回応用物理学関係連合講演会  2010.3 

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    Event date: 2010.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  • 無対流アーク放電によるナノチューブ合成過程のミー散乱測定

    三重野哲, 薄葉州, 古閑一憲, 白谷正治

    春季第57回応用物理学関係連合講演会  2010.3 

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    Event date: 2010.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  • 高周波酸素/水プラズマによるシステインの酸化特性

    林信哉, 中東朱里, 柳生義人, 古閑一憲, 白谷正治

    春季第57回応用物理学関係連合講演会  2010.3 

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    Event date: 2010.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  • プラズマCVDを用いたシリコンナノ粒子の作製と第三世代太陽電池への応用

    川嶋勇毅, 中原賢太, 佐藤 宙, 古閑一憲, 白谷正治, 近藤道雄

    春季第57回応用物理学関係連合講演会  2010.3 

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    Event date: 2010.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学   Country:Japan  

  • Frontier science of interactions between plasmas and nano-interfaces (Invited) Invited International conference

    M. Shiratani, K. Koga

    The 3rd International Conference on Plasma Nanotechnology and Science (IC-PLANTS 2010)  2010.3 

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    Event date: 2010.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya Institute of Technology   Country:Japan  

  • Toxicity of CIGS nano-particles International conference

    S. Iwashita, H. Miyata, Y. Yamada, K. Koga, M. Shiratani, M. Hirata, Y. Kiyohara, A. Tanaka

    The 3rd International Conference on Plasma Nanotechnology and Science (IC-PLANTS 2010)  2010.3 

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    Event date: 2010.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya Institute of Technology, Nagoya   Country:Japan  

  • Surface temperature rise of a-Si:H films during deposition in silane multi-hollow discharges International conference

    Y. Kawashima, K. Nakahara, H. Sato, W. M. Nakamura, K. Koga, M. Shiratani

    The 3rd International Conference on Plasma Nanotechnology and Science (IC-PLANTS 2010)  2010.3 

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    Event date: 2010.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya Institute of Technology   Country:Japan  

  • Hα emission intensity measurements of H2 + Ar + C7H8 plasmas in H-assisted plasma CVD reactor International conference

    T. nomura, Y. Korenaga, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    The 3rd International Conference on Plasma Nanotechnology and Science (IC-PLANTS 2010)  2010.3 

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    Event date: 2010.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya Institute of Technology   Country:Japan  

  • Effects of amplitude modulation of RF discharge voltage on ion saturation current International conference

    H. Miyata, S. Iwashita, Y. Yamada, K. Koga, M. Shiratani

    The 3rd International Conference on Plasma Nanotechnology and Science (IC-PLANTS 2010)  2010.3 

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    Event date: 2010.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya Institute of Technology   Country:Japan  

  • Deposition of n-type a-Si:H using SiH4+PH3 multi-hollow discharge plasma CVD International conference

    K. Nakahara, H. Sato, Y. Kawashima, K. Koga, M. Shiratani

    The 3rd International Conference on Plasma Nanotechnology and Science (IC-PLANTS 2010)  2010.3 

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    Event date: 2010.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya Institute of Technology   Country:Japan  

  • Deposition of n-type a-Si:H using SiH4+PH3 multi-hollow discharge plasma CVD International conference

    K. Nakahara, H. Sato, Y. Kawashima, K. Koga, M. Shiratani

    The 2nd International Student Workshop on Electrical Engineering  2010.3 

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    Event date: 2010.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya Institute of Technology   Country:Japan  

  • Surface temperature rise of a-Si:H films during deposition in silane multi-hollow discharges International conference

    Y. Kawashima, K. Nakahara, H. Sato, W. M. Nakamura, K. Koga, M. Shiratani

    The 2nd International Student Workshop on Electrical Engineering  2010.3 

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    Event date: 2010.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya Institute of Technology   Country:Japan  

  • Hα emission intensity measurements of H? + Ar + C?H? plasmas in H-assisted plasma CVD reactor International conference

    T. Nomura, Y. Korenaga, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    The 2nd International Student Workshop on Electrical Engineering  2010.3 

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    Event date: 2010.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya Institute of Technology   Country:Japan  

  • Effects of amplitude modulation of RF discharge voltage on ion saturation current International conference

    H. Miyata, S. Iwashita, Y. Yamada, K. Koga, M. Shiratani

    The 2nd International Student Workshop on Electrical Engineering  2010.3 

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    Event date: 2010.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya Institute of Technology   Country:Japan  

  • Control of surface roughness of nano-particle composite low-k film deposited in CVD plasma International conference

    H. Miyata, S. Iwashita, Y. Yamada, K. Koga, M. Shiratani, M. Akiyama

    2nd International Symposium on Advance Plasma Science and its Application for Nitrides and Nanomaterials (ISPlasma2010)  2010.3 

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    Event date: 2010.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya Institute of Technology   Country:Japan  

  • Gas Flow Rate Ratio Dependence of Deposition Profile of H-Assisted Plasma CVD Carbon Films on Trench Substrates International conference

    T. Nomura, Y. Korenaga, J. Umetsu, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    2nd International Symposium on Advance Plasma Science and its Application for Nitrides and Nanomaterials (ISPlasma2010)  2010.3 

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    Event date: 2010.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya Institute of Technology   Country:Japan  

  • High Deposition Rate of a-Si:H Films of Low Stabilized Defect Density International conference

    W. M. Nakamura, H. Sato, K. Koga, M. Shiratani

    2nd International Symposium on Advance Plasma Science and its Application for Nitrides and Nanomaterials (ISPlasma2010)  2010.3 

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    Event date: 2010.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya Institute of Technology   Country:Japan  

  • Synthesis of crystalline Si nanoparticles for Quantum dots sensitized solar cells International conference

    Y. Kawashima, K. Nakahara, H. Sato, K. Koga, M. Shiratani, M. Kondo

    2nd International Symposium on Advance Plasma Science and its Application for Nitrides and Nanomaterials (ISPlasma2010)  2010.3 

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    Event date: 2010.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya Institute of Technology   Country:Japan  

  • Effects of H2 Dilution on Deposition of a-Si:H Films using Silane Multi-Hollow Discharge Plasma CVD International conference

    K. Nakahara, H. Sato, W. M. Nakamura, K. Koga, M. Shiratani

    2nd International Symposium on Advance Plasma Science and its Application for Nitrides and Nanomaterials (ISPlasma2010)  2010.3 

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    Event date: 2010.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya Institute of Technology   Country:Japan  

  • Thin film silicon solar cells in the age of GW production lines (Invited) Invited International conference

    M. Shiratani, K. Koga

    The Second International Symposium of Experiment-Integrated Computational Chemistry on Multiscale Fluidics (ECCMF2)  2010.2 

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    Event date: 2010.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sendai Excel Hotel Tokyu, Miyagi   Country:Japan  

  • Measurement of electron density in multi-hollow discharges with magnetic field

    H. Sato, Y. Kawashima, K. Nakahara, K. Koga, M. Shiratani

    第27回プラズマプロセシング研究会(SPP-27)  2010.2 

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    Event date: 2010.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:横浜市開港記念会館,   Country:Japan  

  • Observation of nano-particle transport in capacitively coupled radio frequency discharge plasmas

    S. Iwashita, H. Miyata, Y. Yamada, H. Matsuzaki, K. Koga, M. Shiratani

    第27回プラズマプロセシング研究会(SPP-27)  2010.2 

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    Event date: 2010.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:横浜市開港記念会館,   Country:Japan  

  • In-Situ Sampling of Dust Particles Produced Due to Interaction between Main Discharge Plasmas and Inner Wall in LHD

    H. Miyata, S. Iwashita, Y. Yamada, K. Koga, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, LHD Experimental Group

    第27回プラズマプロセシング研究会(SPP-27)  2010.2 

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    Event date: 2010.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:横浜市開港記念会館,   Country:Japan  

  • In-situ Measurement of Production Process of Nanotube-Aggregates by the Laser-Mie Scattering (Dependence of Arc Condition and Gravity)

    T. Mieno, G. Tan, S. Usuba, K. Koga, M. Shiratani

    第27回プラズマプロセシング研究会(SPP-27)  2010.2 

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    Event date: 2010.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:横浜市開港記念会館,   Country:Japan  

  • Control of deposition profile of hard carbon films on trenched substrates using H-assisted plasma CVD reactor

    T. Nomura, Y. Korenaga, H. Matsuzaki, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    第27回プラズマプロセシング研究会(SPP-27)  2010.2 

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    Event date: 2010.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:横浜市開港記念会館,   Country:Japan  

  • Synthesis of crystalline Si nanoparticles for Quantum dots-sensitized solar cells using multi-hollow discharge plasma CVD

    Y. Kawashima, K. Nakahara, H. Sato, K. Koga, M. Shiratani, M. Kondo

    第27回プラズマプロセシング研究会(SPP-27)  2010.2 

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    Event date: 2010.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:横浜市開港記念会館,   Country:Japan  

  • Towards the multiple exciton generation solar cells ? Si quantum-dot sensitized solar cells (Invited) Invited International conference

    M. Shiratani, Y. Kawashima, K. Nakahara, H. Sato, W. M. Nakamura, K. Koga

    The 10th International Workshop on Advanced Plasma Processing and Diagnostics(The 1st International Student Workshop on Electrical Engineering)  2010.1 

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    Event date: 2010.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:長崎大学   Country:Japan  

  • Nano-particle composite ULK films deposited by plasma CVD International conference

    S. Iwashita, H. Miyata, H. Matsuzaki, K. Koga, M. Shiratani

    The 10th International Workshop on Advanced Plasma Processing and Diagnostics(The 1st International Student Workshop on Electrical Engineering)  2010.1 

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    Event date: 2010.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:長崎大学   Country:Japan  

  • Effects of hydrogen dilution on electron density in multi-hollow discharges with magnetic field International conference

    K. Nakahara, H. Sato, Y. Kawashima, K. Koga, M. Shiratani

    The 10th International Workshop on Advanced Plasma Processing and Diagnostics(The 1st International Student Workshop on Electrical Engineering)  2010.1 

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    Event date: 2010.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:長崎大学   Country:Japan  

  • Dependence of emission intensities on discharge power of H atom source in H2 + Ar + C7H8 CVD plasmas International conference

    T. Nomura, Y. Korenaga, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    The 10th International Workshop on Advanced Plasma Processing and Diagnostics(The 1st International Student Workshop on Electrical Engineering)  2010.1 

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    Event date: 2010.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:長崎大学   Country:Japan  

  • Carrier extraction from Si nanoparitcles in quantum dots-sensitized solar cell International conference

    Y. Kawashima, K. Nakahara, H. Sato, K. Koga, M. Shiratani, M. Kondo

    The 10th International Workshop on Advanced Plasma Processing and Diagnostics(The 1st International Student Workshop on Electrical Engineering)  2010.1 

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    Event date: 2010.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:長崎大学   Country:Japan  

  • Carbon dust formed due to interaction between graphite and H2 plasma International conference

    H. Miyata, S. Iwashita, Y. Yamada, K. Koga, M. Shiratani

    The 10th International Workshop on Advanced Plasma Processing and Diagnostics(The 1st International Student Workshop on Electrical Engineering)  2010.1 

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    Event date: 2010.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:長崎大学   Country:Japan  

  • 2次元フォトンカウンティングレーザー散乱法を用いたCVDプラズマ中のナノ粒子輸送の観察

    宮田大嗣, 岩下伸也, 宮原弘臣, 松崎秀文, 古閑一憲, 白谷正治

    プラズマ・核融合学会 九州・沖縄・山口支部 第12回支部大会  2009.12 

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    Event date: 2009.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • ヘリコンプラズマ・カーボン壁相互作用で生成されるダストの分析

    岩下伸也, 宮田大嗣, 古閑一憲, 白谷正治

    プラズマ・核融合学会 九州・沖縄・山口支部 第12回支部大会  2009.12 

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    Event date: 2009.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • トルエン水素プラズマを用いたカーボン薄膜堆積に対するイオン・ラジカルフラックスの影響

    野村卓矢, 梅津潤, 井上和彦, 松崎秀文, 古閑一憲, 白谷正治, 節原裕一, 関根誠, 堀勝

    プラズマ・核融合学会 九州・沖縄・山口支部 第12回支部大会  2009.12 

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    Event date: 2009.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • シランホロ―放電のプラズマパラメータに対する磁場印加の効果

    中村ウィリアム誠, 川嶋勇毅, 田中雅敏, 佐藤宙, 宮原弘臣, 松崎秀文, 古閑一憲, 白谷正治

    プラズマ・核融合学会 九州・沖縄・山口支部 第12回支部大会  2009.12 

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    Event date: 2009.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • カーボン薄膜異方性製膜用Ar+H2+C7H8プラズマのプラズマパラメータ計測

    梅津潤, 井上和彦, 野村卓矢, 松崎秀文, 古閑一憲, 白谷正治, 節原裕一, 関根誠, 堀勝

    プラズマ・核融合学会 九州・沖縄・山口支部 第12回支部大会  2009.12 

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    Event date: 2009.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • シリコンナノ粒子を用いた量子ドット増感太陽電池

    川嶋勇毅, 中原賢太, 佐藤宙, 古閑一憲, 白谷正治, 近藤道雄

    19th Academic Symposium of MRS-Japan 2009  2009.12 

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    Event date: 2009.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜   Country:Japan  

  • プラズマCVDによるSiOCHナノ粒子構造の多孔質低誘電率膜

    宮田大嗣, 岩下伸也, 山田泰之, 松崎秀文, 古閑一憲, 白谷正治, 秋山守人

    19th Academic Symposium of MRS-Japan 2009  2009.12 

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    Event date: 2009.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜   Country:Japan  

  • プラズマCVDカーボン薄膜のトレンチ基板上への製膜形状の圧力依存性

    野村卓矢, 是永有輝, 梅津潤, 松崎秀文, 古閑一憲, 白谷正治, 節原裕一, 関根誠, 堀勝

    19th Academic Symposium of MRS-Japan 2009  2009.12 

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    Event date: 2009.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜   Country:Japan  

  • Application of Si nanoparticles to third generation photovoltaics

    M. Shiratani, Y. Kawashima, K. Koga

    2nd International Symposium on Innovative Solar Cells  2009.12 

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    Event date: 2009.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:エポカル筑波   Country:Japan  

  • プラズマ―バイオ融合科学:プラズマプロセスの観点から(招待講演) Invited

    白谷正治, 古閑一憲

    第26回プラズマ・核融合学会年会  2009.12 

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    Event date: 2009.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都   Country:Japan  

  • LHDの主放電と内壁の相互作用で発生するダストのフラックス

    岩下伸也, 宮田大嗣, 山田泰之, 古閑一憲, 白谷正治, 芦川直子, 増崎貴, 西村清彦, 相良明男, LHD実験グループ

    第26回プラズマ・核融合学会年会  2009.12 

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    Event date: 2009.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都   Country:Japan  

  • Deposition Profile Control of Carbon Films on Patterned Substrates using a Hydrogen-assited Plasma CVD Method International conference

    T. Nomura, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    2009 MRS Fall Meeting  2009.12 

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    Event date: 2009.11 - 2009.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston   Country:Other  

  • Carbon particle formation due to interaction between graphite, helicon plasmas International conference

    M. Shiratani, S. Iwashita, H. Miyata, K. Koga

    American Vacuum Society 56th International Symposium  2009.11 

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    Event date: 2009.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:San Jose   Country:Other  

  • Production of crystalline Si nanoparticles for third generation photovoltaics using a multi-hollow discharge plasma CVD method International conference

    Y. Kawashima, H. Sato, K. Koga, M. Shiratani, M. Kondo

    American Vacuum Society 56th International Symposium  2009.11 

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    Event date: 2009.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:San Jose   Country:Other  

  • Deposition profile of carbon films in submicron wide trenches using H-assisted plasma International conference

    T. Nomura, K. Koga, M. Shiratani, M. Sekine, Y. Setsuhara, M. Hori

    American Vacuum Society 56th International Symposium  2009.11 

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    Event date: 2009.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:San Jose   Country:Other  

  • Amplitude modulated pulse RF discharges for producing and driving nano-blocks International conference

    S. Iwashita, H. Miyata, H. Matsuzaki, K. Koga, M. Shiratani

    American Vacuum Society 56th International Symposium  2009.11 

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    Event date: 2009.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:San Jose   Country:Other  

  • Manipulation of nanoparticles using plasmas International conference

    M. Shiratani, S. Iwashita, H. Miyata, K. Koga

    10th Workshop on Fine Particle Plasmas  2009.11 

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    Event date: 2009.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:核融合科学研究所, 岐阜   Country:Japan  

  • 容量結合型高周波放電プラズマ中のナノブロック輸送の観察

    宮田大嗣, 山田泰之, 岩下伸也, 古閑一憲, 白谷正治

    応用物理学会九州支部学術講演会  2009.11 

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    Event date: 2009.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本   Country:Japan  

  • 炭素系薄膜のトレンチ基板上への製膜形状のイオンエネルギー依存性

    野村卓也, 是永有輝, 古閑一憲, 白谷正治, 節原裕一, 関根誠, 堀勝

    応用物理学会九州支部学術講演会  2009.11 

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    Event date: 2009.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本   Country:Japan  

  • 振幅変調パルス放電を用いたナノ粒子含有多孔質低誘電率膜の作製

    岩下伸也, 宮田大嗣, 松崎秀文, 古閑一憲, 白谷正治, 秋山守人

    第25回 九州・山口プラズマ研究会  2009.11 

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    Event date: 2009.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本   Country:Japan  

  • 重水素ヘリコンプラズマ・カーボン壁相互作用で生成されるダストのサイズ分布

    山田泰之, 宮田大嗣, 岩下伸也, 古閑一憲, 白谷正治

    応用物理学会九州支部学術講演会  2009.11 

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    Event date: 2009.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本   Country:Japan  

  • マルチホロー放電プラズマCVDによる結晶シリコンナノ粒子のサイズ制御

    川嶋勇毅, 中原賢太, 佐藤宙, 古閑一憲, 白谷正治

    応用物理学会九州支部学術講演会  2009.11 

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    Event date: 2009.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本   Country:Japan  

  • プラズマCVD炭素系薄膜のトレンチ基板上への製膜形状のガス流量比依存性

    是永有輝, 野村卓也, 古閑一憲, 白谷正治, 節原裕一, 関根誠, 堀勝

    応用物理学会九州支部学術講演会  2009.11 

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    Event date: 2009.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本   Country:Japan  

  • H2+SiH4マルチホロー放電プラズマの電子密度計測

    佐藤宙, 中原賢太, 川嶋勇毅, 古閑一憲, 白谷正治

    応用物理学会九州支部学術講演会  2009.11 

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    Event date: 2009.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本   Country:Japan  

  • Flux of dust particles formed due to plasma-wall interaction in LHD International conference

    H. Miyata, S. Iwashita, Y. Yamada, K. Koga, M. Shiratani, N. Ashikawa, K. Nishimura, A. Sagara, S. Masuzaki, LHD Experimental Group

    10th Workshop on Fine Particle Plasmas  2009.11 

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    Event date: 2009.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:核融合科学研究所, 岐阜   Country:Japan  

  • Ultrahigh quality amorphous silicon film deposition for solar cell employing novel plasma enhanced CVD (Invited) Invited International conference

    M. Shiratani, K. Koga

    62nd Gaseous Electronics Conference  2009.10 

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    Event date: 2009.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Saratoga Springs, NY   Country:Other  

  • Nanoblock manipulation in CVD plasmas International conference

    H. Miyata, S. Iwashita, Y. Yamada, K. Koga, M. Shiratani

    62nd Gaseous Electronics Conference  2009.10 

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    Event date: 2009.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Saratoga Springs, NY   Country:Other  

  • Towards plasma nano-factories (Invited) Invited International conference

    M. Shiratani, K. Koga

    2nd International Conference on Advanced Plasma Technologies (iCAPT-II) with 1st International Plasma Nanoscience Symposium (iPlasmaNano-I)  2009.10 

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    Event date: 2009.9 - 2009.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Piran   Country:Slovenia  

  • Dust Particles Formed owing to Interactions between H2 or D2 Helicon Plasmas, Graphite International conference

    H. Miyata, S. Iwashita, Y. Yamada, K. Koga, M. Shiratani

    2009 International Symposium on Dry Process  2009.9 

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    Event date: 2009.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:BEXCO Convention center, Busan   Country:Korea, Republic of  

  • Synthesis of Si nanoparticles for multiple exciton generation solar cells using multi-hollow discharge plasma CVD International conference

    Y. Kawashima, H. Sato, K. Koga, M. Shiratani, M. Kondo

    2009 International Symposium on Dry Process  2009.9 

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    Event date: 2009.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:BEXCO Convention center, Busan   Country:Korea, Republic of  

  • Synthesis of Si Nanoparticles for Multiple Exciton Generation Solar Cells using Multi-Hollow Discharge Plasma CVD International conference

    Y. Kawashima, H. Sato, K. Koga, M. Shiratani, M. Kondo

    2009 International Symposium on Dry Process  2009.9 

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    Event date: 2009.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:BEXCO Convention center, Busan   Country:Korea, Republic of  

  • Pressure, aspect ratio dependence of deposition profile of carbon films on trench substrates deposited by plasma CVD International conference

    T. Nomura, Y. Korenaga, J. Umetsu, H. Matsuzaki, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    2009 International Symposium on Dry Process  2009.9 

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    Event date: 2009.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:BEXCO Convention center, Busan   Country:Korea, Republic of  

  • Porosity Control of Nano-particle Composite Porous Low Dielectric Films using Pulse RF Discharges with Amplitude Modulation International conference

    S. Iwashita, H. Miyata, K. Koga, H. Matsuzaki, M. Shiratani, M. Akiyama

    2009 International Symposium on Dry Process  2009.9 

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    Event date: 2009.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:BEXCO Convention center, Busan   Country:Korea, Republic of  

  • Measurements of Surface Temperature of a-Si:H Films in Silane Multi-Hollow Discharge with IR Thermometer International conference

    H. Sato, Y. Kawashima, K. Koga, M. Shiratani

    2009 International Symposium on Dry Process  2009.9 

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    Event date: 2009.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:BEXCO Convention center, Busan   Country:Korea, Republic of  

  • Measurements of Electron Density in SiH4+H2 Multi-Hollow Discharges using a Frequency Shift Probe International conference

    K. Nakahara, Y. Kawashima, H. Sato, K. Koga, M. Shiratani

    2009 International Symposium on Dry Process  2009.9 

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    Event date: 2009.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:BEXCO Convention center, Busan   Country:Korea, Republic of  

  • Production of Si nanoparticles in CVD plasmas for Si thin fillm solar cells of the third generation (Invited) Invited International conference

    M. Shiratani, K. Koga

    Second International Conference on Microelectronics and Plasma Technology (ICMAP2009)  2009.9 

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    Event date: 2009.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Busan   Country:Korea, Republic of  

  • Production of Si nano-particles in CVD plasmas for Si thin film solar cells of the third generation (Invited Talk) International conference

    M. Shiratani, K. Koga

    2nd International Conference on Microelectronics, Plasma Technology (ICMAP 2009)  2009.9 

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    Event date: 2009.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:BEXCO Convention center, Busan   Country:Korea, Republic of  

  • Plasma CVD for Si thin fillm solar cells (Invited) Invited International conference

    M. Shiratani, K. Koga

    International Conference on Plasma Surface Engineering (AEPSE2009)  2009.9 

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    Event date: 2009.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Busan   Country:Korea, Republic of  

  • Deposition of porous low-k films having nano-grained structures using amplitude modulated pulse rf discharges International conference

    S. Iwashita, H. Miyata, H. Matsuzaki, K. Koga, M. Shiratani, M. Akiyama

    Seventh Asian-European International Conference on Plasma Surface Engineering (AEPSE 2009)  2009.9 

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    Event date: 2009.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:BEXCO Convention center, Busan   Country:Korea, Republic of  

  • Plasma CVD for Si thin film solar cells (Invited) Invited International conference

    M. Shiratani, K. Koga

    Seventh Asian-European International Conference on Plasma Surface Engineering (AEPSE 2009)  2009.9 

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    Event date: 2009.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:BEXCO Convention center, Busan   Country:Korea, Republic of  

  • Detection, control of nano-clusters in CVD plasmas for a-Si thin film solar cells International conference

    M. Shiratani, K. Koga

    Seventh Asian-European International Conference on Plasma Surface Engineering (AEPSE 2009)  2009.9 

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    Event date: 2009.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:BEXCO Convention center, Busan   Country:Korea, Republic of  

  • Aspect ratio dependence of deposition profile of plasma CVD carbon films on trenched substrates International conference

    M. Shiratani, T. Nomura, Y. Korenaga, J. Umetsu, H. Matsuzaki, K. Koga, Y. Setsuhara, M. Sekine, M. Hori

    Seventh Asian-European International Conference on Plasma Surface Engineering (AEPSE 2009)  2009.9 

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    Event date: 2009.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:BEXCO Convention center, Busan   Country:Korea, Republic of  

  • プラズマ中ナノ結晶シリコン成長過程の診断(招待講演) Invited

    白谷正治, 古閑一憲

    第70回応用物理学会学術講演会  2009.9 

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    Event date: 2009.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:富山大学   Country:Japan  

  • 放射温度計を用いたシランマルチホロー放電におけるa-Si:H膜の表面温度測定

    佐藤宙, 中原賢太, 川嶋勇毅, 古閑一憲, 白谷正治

    第70回応用物理学会学術講演会  2009.9 

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    Event date: 2009.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:富山大学   Country:Japan  

  • プラズマCVD炭素薄膜のトレンチへの製膜形状のガス流量比―入射イオンエネルギーマッピング

    野村卓矢, 是永有輝, 梅津潤, 古閑一憲, 白谷正治, 節原裕一, 関根誠, 堀勝

    第70回応用物理学会学術講演会  2009.9 

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    Event date: 2009.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:富山大学   Country:Japan  

  • ナノ粒子含有多孔質低誘電率膜物性の粒子サイズ依存性

    岩下伸也, 宮田大嗣, 松崎秀文, 古閑一憲, 白谷正治, 秋山守人

    第70回応用物理学会学術講演会  2009.9 

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    Event date: 2009.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:富山大学   Country:Japan  

  • シリコン太陽電池製造のためのプラズマ技術の現状と展望(特別招待講演) Invited

    白谷正治, 古閑一憲

    プラズマ科学のフロンティア研究会  2009.9 

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    Event date: 2009.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:核融合科学研究所   Country:Japan  

  • Plasma CVD of Nano-particle Composite Porous SiOCH Films International conference

    M. Shiratani, S. Iwashita, H. Miyata, K. Koga, H. Matsuzaki, M. Akiyama

    19th International Symposium on Plasma Chemistry  2009.7 

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    Event date: 2009.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Bochum   Country:Germany  

  • Thin film silicon solar cells: present, future (Invited) Invited International conference

    M. Shiratani, K. Koga

    The 9th Korea-Japan Workshop  2009.7 

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    Event date: 2009.7

    Language:English  

    Venue:Kwangwoon University   Country:Korea, Republic of  

  • Synthesis of crystalline Si nanoparticles for third generation photovoltaics using multi-hollow discharge plasma CVD, photoluminescence of the nanoparticles International conference

    Y. Kawashima, H. Sato, K. Koga, M. Shiratani, M. Kondo

    The 9th Korea-Japan Workshop  2009.7 

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    Event date: 2009.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kwangwoon University   Country:Korea, Republic of  

  • クラスタ抑制プラズマCVDを用いた高光安定水素化アモルファスシリコン薄膜の高速堆積

    白谷正治, 古閑一憲

    第1回三菱PVコンファレンス  2009.6 

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    Event date: 2009.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:三菱重工, 諫早   Country:Japan  

  • Plasma diagnostics of H2 + SiH4 multi-hollow discharges International conference

    H. Sato, W. M. Nakamura, Y. Kawashima, K. Nakahara, H. Matsuzaki, K. Koga, M. Shiratani

    22nd SYMPOSIUM ON PLASMA SCIENCE FOR MATERIALS  2009.6 

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    Event date: 2009.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:東京大学山上会館   Country:Japan  

  • カーボン薄膜のプラズマCVDにおける微細溝基板上への堆積形状の圧力依存性

    野村卓矢, 梅津潤, 是永有輝, 古閑一憲, 白谷正治, 節原裕一, 関根誠, 堀勝

    九州表面・真空研究会(兼)第14回九州薄膜表面研究会  2009.6 

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    Event date: 2009.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州工業大学   Country:Japan  

  • 振幅変調パルス放電を用いたナノ粒子含有多孔質絶縁膜の作製と物性評価

    宮田大嗣, 岩下伸也, 松崎秀文, 古閑一憲, 白谷正治, 秋山守人

    九州表面・真空研究会(兼)第14回九州薄膜表面研究会  2009.6 

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    Event date: 2009.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州工業大学   Country:Japan  

  • マルチホロー放電プラズマCVD法を用いて作製した結晶シリコンナノ粒子の第3世代太陽電池への応用

    川嶋勇毅, 佐藤宙, 古閑一憲, 白谷正治, 近藤道雄

    九州表面・真空研究会(兼)第14回九州薄膜表面研究会  2009.6 

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    Event date: 2009.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州工業大学   Country:Japan  

  • Amplitude modulated pulse RF discharges for synthesizing nano-particle composite porous low-k films International conference

    S. Iwashita, H. Miyata, H. Matsuzaki, K. Koga, M. Shiratani, M. Akiyama

    Memorial Symposium for the Retirement of Professor Tachibana “Toward the Next Generation of Plasma Science, Technology”  2009.5 

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    Event date: 2009.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto Univ.   Country:Japan  

  • Effects of hydrogen dilution on electron density in multi-hollow disicharge for depositing highly stable a-Si:H thin films International conference

    Y. Kawashima, H. Sato, H. Matsuzaki, K. Koga, M. Shiratani

    Memorial Symposium for the Retirement of Professor Tachibana “Toward the Next Generation of Plasma Science, Technology”  2009.5 

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    Event date: 2009.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto Univ.   Country:Japan  

  • Health effects of indium compounds: Outcomes of animal, epidemiological studies,, prevention of indium lung (Invited) Invited International conference

    A. Tanaka, M. Hirata, Y. Kiyohara, M. Nakano, K. Omae, M. Shiratani, K. Koga

    6th International Symposium on Transparent Oxide Thin Films for Electronics, Optics (TOEO-6)  2009.4 

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    Event date: 2009.4

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tokyo Fashion Town Building   Country:Japan  

  • C7H8+H2+Ar混合プラズマにおけるC,CH,C2発光強度のガス流量比依存性

    梅津 潤, 井上和彦, 野村卓矢, 松崎秀文, 古閑一憲, 白谷正治, 節原裕一, 関根 誠, 堀 勝

    第56回応用物理学関係連合講演会  2009.4 

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    Event date: 2009.3 - 2009.4

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:筑波大学   Country:Japan  

  • 水素希釈シランマルチホロー放電における電子密度の空間分布

    佐藤 宙, 田中雅敏, 川嶋勇毅, 中村ウィリアム 誠, 松崎秀文, 古閑一憲, 白谷正治

    第56回応用物理学関係連合講演会  2009.3 

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    Event date: 2009.3 - 2009.4

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:筑波大学   Country:Japan  

  • マルチホロー放電プラズマCVD法で作製した結晶シリコンナノ粒子のフォトルミネッセンス

    川嶋勇毅, 田中雅敏, 佐藤 宙, 中村ウィリアム 誠, 松崎秀文, 古閑一憲, 白谷正治, 近藤道雄

    第56回応用物理学関係連合講演会  2009.3 

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    Event date: 2009.3 - 2009.4

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:筑波大学   Country:Japan  

  • ハニカム型有磁場マルチホロー放電を用いた高品質a-Si:Hの2.5nm/s製膜

    田中雅敏, 中村ウィリアム 誠, 佐藤 宙, 川嶋勇毅, 古閑一憲, 松崎秀文, 白谷正治

    第56回応用物理学関係連合講演会  2009.3 

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    Event date: 2009.3 - 2009.4

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:筑波大学   Country:Japan  

  • 無重力~加重力下アーク放電による炭素クラスター合成の差異

    三重野哲, 薄葉 州, 白谷正治, 古閑一憲

    第56回応用物理学関係連合講演会  2009.4 

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    Event date: 2009.3 - 2009.4

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:筑波大学   Country:Japan  

  • 針状電極を用いたCVDプラズマ中のナノブロックの3次元輸送制御

    岩下伸也, 宮田大嗣, 松崎秀文, 古閑一憲, 白谷正治

    第56回応用物理学関係連合講演会  2009.4 

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    Event date: 2009.3 - 2009.4

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:筑波大学   Country:Japan  

  • ナノ粒子含有ポーラス低誘電率絶縁膜の耐熱性

    岩下伸也, 宮田大嗣, 松崎秀文, 古閑一憲, 白谷正治

    第56回応用物理学関係連合講演会  2009.4 

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    Event date: 2009.3 - 2009.4

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:筑波大学   Country:Japan  

  • Plasma manipulation of nano-blocks and its application to ULK film deposition (Invited) Invited International conference

    M. Shiratani, S. Iwashita, H. Miyata, K. Koga, M. Akiyama

    International Conference on Plasma Nano Technology & Science (IC-PLANTS2009)  2009.3 

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    Event date: 2009.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  • Characteristics of dust particles produced due to interaction between hydrogen plasmas, graphite

    S. Iwashita, H. Miyata, K. Koga, M. Shiratani, N. Ashikawa, A. Sagara, K. Nisimura

    プラズマ科学シンポジウム2009/第26回プラズマプロセシング研究会  2009.2 

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    Event date: 2009.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya University   Country:Japan  

  • Nano-block manipulation using pulse RF discharges with amplitude modulation combined with a needle electrode

    S. Iwashita, H. Miyata, H. Matsuzaki, K. Koga, M. Shiratani

    プラズマ科学シンポジウム2009/第26回プラズマプロセシング研究会  2009.2 

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    Event date: 2009.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya University   Country:Japan  

  • Effects of magnetic fields on multi-hollow discharges for thin film silicon solar cells

    Nakamura W. M., Sato H., Koga K., Shiratani M.

    プラズマ科学シンポジウム2009/第26回プラズマプロセシング研究会  2009.2 

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    Event date: 2009.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya University   Country:Japan  

  • Deposition profile of toluene plasma CVD carbon films in trenches

    J. Umetsu, K. Inoue, T. Nomura, H. Matsuzaki, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    プラズマ科学シンポジウム2009/第26回プラズマプロセシング研究会  2009.2 

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    Event date: 2009.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya University   Country:Japan  

  • Deposition profile control of plasma enhanced CVD carbon films in submicron wide trenches International conference

    M. Shiratani, J. Umetsu, T. Nomura, K. Inoue, K. Koga, Y. Setsuhara, M. Sekine, M. Hori

    2nd International Conference on Plasma-Nano Technology & Science  2009.1 

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    Event date: 2009.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya University   Country:Japan  

  • High Deposition Rate of Highly Stable a-Si:H Films by Magnetically Enhanced Multi-hollow Discharges International conference

    W. M. Nakamura, Y. Kawashima, M. Tanaka, H. Sato, H. Matsuzaki, K. Koga, M. Shiratani

    2nd International Conference on Plasma-Nano Technology & Science  2009.1 

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    Event date: 2009.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya University   Country:Japan  

  • Design and controlling of plasma nano-processing for the third generation solar cell devices (Invited) Invited International conference

    M. Shiratani, W. M. Nakamura, H. Sato, K. Koga

    8th International Workshop of Advanced Plasma Processing and Diagnostics  2009.1 

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    Event date: 2009.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:テクノプラザ, 岐阜   Country:Japan  

  • 2次元フォトンカウンティングレーザー散乱法を用いたCVDプラズマ中のナノ粒子輸送の観察

    宮田大嗣, 宮原弘臣, 岩下伸也, 松崎秀文, 古閑一憲, 白谷正治

    プラズマ・核融合学会 第12回九州・沖縄・山口支部大会  2008.12 

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    Event date: 2008.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • 薄膜シリコン太陽電池作製のためのマルチホロー放電に対する磁場印加の効果

    中村ウィリアム誠, 古閑一憲, 佐藤宙, 白谷正治

    プラズマ・核融合学会 第12回九州・沖縄・山口支部大会  2008.12 

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    Event date: 2008.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • ヘリコンプラズマ・カーボン壁相互作用で生成されるダストの分析

    岩下伸也, 宮田大嗣, 古閑一憲, 白谷正治

    プラズマ・核融合学会 第12回九州・沖縄・山口支部大会  2008.12 

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    Event date: 2008.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • トルエン水素プラズマを用いたカーボン薄膜堆積に対するイオン・ラジカルフラックスの影響

    野村卓矢, 梅津潤, 井上和彦, 松崎秀文, 古閑一憲, 白谷正治, 節原裕一, 関根誠, 堀勝

    プラズマ・核融合学会 第12回九州・沖縄・山口支部大会  2008.12 

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    Event date: 2008.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • シランホロー放電のプラズマパラメータに対する磁場印加の効果

    中村ウィリアム誠, 川嶋勇毅, 田中雅敏, 佐藤 宙, 宮原弘臣, 松崎秀文, 古閑一憲, 白谷正治

    プラズマ・核融合学会 第12回九州・沖縄・山口支部大会  2008.12 

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    Event date: 2008.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • カーボン薄膜異方性製膜用トルエン水素プラズマのプラズマパラメータ計測

    梅津潤, 井上和彦, 野村卓矢, 松崎秀文, 古閑一憲, 白谷正治, 節原裕一, 関根誠, 堀勝

    プラズマ・核融合学会 第12回九州・沖縄・山口支部大会  2008.12 

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    Event date: 2008.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • マルチホロー放電プラズマCVD法を用いて作製した、ナノ結晶シリコン薄膜の光電特性

    川嶋勇毅, 古閑一憲, 中村ウィリアム誠, 佐藤宙, 田中雅敏, 白谷正治

    第2回プラズマ新領域研究会  2008.12 

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    Event date: 2008.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:広島大学   Country:Japan  

  • 有磁場マルチホロー放電プラズマCVD法を用いた高光安定a-Si:H膜の1.2nm/sでの堆積

    中村 ウィリアム 誠, 田中 雅敏, 川嶋 勇毅, 佐藤 宙, 宮原 弘臣, 松崎 秀文, 古閑 一憲, 白谷 正治

    第2回プラズマ新領域研究会  2008.12 

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    Event date: 2008.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:広島大学   Country:Japan  

  • Control of nano-block transport in asymmetric capacitively coupled discharges International conference

    S. Iwashita, H. Miyata, H. Matsuzaki, K. Koga, M. Shiratani

    9th Workshop on Fine Particle Plasmas  2008.12 

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    Event date: 2008.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:NIFS   Country:Japan  

  • Deposition of Nano-particle Composite Porus Low-k Films Using Pulse RF Discharges with Amplitude Modulation International conference

    M. Shiratani, S. Iwashita, H. Miyata, H. Matsuzaki, K. Koga

    The IUMRS International Conference in Asia 2008  2008.12 

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    Event date: 2008.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:名古屋市   Country:Japan  

  • Pressure Dependence of Deposition Rate of a-Si:H Films Deposited Using a Multi-hollow Discharge International conference

    H. Sato, W. M. Nakamura, H. Miyahara, H. Matsuzaki, K. Koga

    The IUMRS International Conference in Asia 2008  2008.12 

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    Event date: 2008.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:名古屋市   Country:Japan  

  • Effects of Hydrogen Dilution on Deposition of a-Si:H Films using a Multi-hollow Dischage Plasma CVD Method International conference

    H. Sato, W. M. Nakamura, H. Miyahara, H. Matsuzaki, K. Koga

    The IUMRS International Conference in Asia 2008  2008.12 

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    Event date: 2008.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:名古屋市   Country:Japan  

  • Evaluation of 2D Spatial Profiles of Volume Fraction of Clusters Incorporated into a-Si:H Films International conference

    H. Sato, W. M. Nakamura, H. Miyahara, H. Matsuzaki, K. Koga, M. Shiratani

    The IUMRS International Conference in Asia 2008  2008.12 

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    Event date: 2008.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:名古屋市   Country:Japan  

  • Discharge Power Dependence of Ha Intensity in H2+C7H8 Capacitively Coupled Dicharges International conference

    K. Inoue, J. Umetsu, T. Nomura, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    The IUMRS International Conference in Asia 2008  2008.12 

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    Event date: 2008.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:名古屋市   Country:Japan  

  • Dependence of Deposition Rate of Carbon Films in Trenches on Substrate Temperature, Aspect Ratio Using H-assisted Plasma CVD Reactor International conference

    J. Umetsu, K. Inoue, T. Noumura, H. Matsuzaki, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    The IUMRS International Conference in Asia 2008  2008.12 

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    Event date: 2008.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:名古屋市   Country:Japan  

  • Formation of Dust Particles due to Interaction between Graphite, Deuterium Helicon Plasmas International conference

    M. Shiratani, S. Iwashita, H. Miyata, K. Koga

    The IUMRS International Conference in Asia 2008  2008.12 

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    Event date: 2008.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:名古屋市   Country:Japan  

  • シランマルチホロー放電を用いたa-Si:H製膜における水素希釈の効果

    佐藤 宙, 田中雅敏, 川嶋勇毅, 中村ウィリアム誠, 宮原浩臣, 古閑一憲, 松崎秀文, 白谷正治

    2008年度 応用物理学会九州支部学術講演会  2008.11 

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    Event date: 2008.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:宮崎大学   Country:Japan  

  • 低気圧ホロー放電プラズマCVDを用いたa-Si:H薄膜の製膜速度の向上

    田中 雅敏, 佐藤 宙, 中村 誠 ウイリアム, 川嶋 勇毅, 古閑 一憲, 宮原 弘臣, 松崎 秀文, 白谷 正治

    2008年度 応用物理学会九州支部学術講演会  2008.11 

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    Event date: 2008.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:宮崎大学   Country:Japan  

  • 炭素系薄膜のトレンチ基板上への製膜速度のアスペクト比・基板温度依存性

    野村卓矢, 梅津潤, 井上和彦, 松崎秀文, 古閑一憲, 白谷正治, 節原裕一, 関根誠, 堀勝

    2008年度 応用物理学会九州支部学術講演会  2008.11 

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    Event date: 2008.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:宮崎大学   Country:Japan  

  • パルスプラズマを用いたナノブロックの3次元輸送制御

    宮田 大嗣, 岩下 伸也, 松崎 秀文, 古閑 一憲, 白谷 正治

    2008年度 応用物理学会九州支部学術講演会  2008.11 

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    Event date: 2008.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:宮崎大学   Country:Japan  

  • ナノ結晶シリコン薄膜の導電率の照射光強度依存性

    川嶋 勇毅, 古閑 一憲, 白谷 正治

    2008年度 応用物理学会九州支部学術講演会  2008.11 

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    Event date: 2008.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:宮崎大学   Country:Japan  

  • Deposition profile of plasma CVD carbon films in trenches International conference

    J. Umetsu, K. Inoue, T. Nomura, H. Matsuzaki, K. Koga, Y. Setsuhara, M. Shiratani, M. Sekine, M. Hori

    30th International Symposium on Dry Process  2008.11 

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    Event date: 2008.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tokyo   Country:Japan  

  • Plasma CVD of Nano-particle Composite Porous Films of k=1.4-2.9, Young's Modulus above 10 GPa International conference

    S. Iwashita, H. Miyata, K. Koga, H. Matsuzaki, M. Shiratani, M. Akiyama

    30th International Symposium on Dry Process  2008.11 

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    Event date: 2008.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tokyo   Country:Japan  

  • Control of deposition profile of plasma CVD hard carbon films on substrates with trenches International conference

    M. Shiratani, J. Umetsu, K. Inoue, T. Nomura, H. Matsuzaki, K. Koga, Y. Setsuhara, M. Sekine, M. Hori

    61st Annual Gaseous Electronics Conference  2008.10 

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    Event date: 2008.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Marriott Dallas/Addison Quorum   Country:Other  

  • Nano-particle manipulation using pulse RF discharges with amplitude modulation International conference

    S. Iwashita, K. Koga, M. Shiratani

    61st Annual Gaseous Electronics Conference  2008.10 

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    Event date: 2008.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Marriott Dallas/Addison Quorum   Country:Other  

  • Analysis of dust particles produced due to interaction between graphite, deuterium helicon plasmas International conference

    S. Iwashita, H. Miyata, H. Matsuzaki, K. Koga, M. Shiratani

    61st Annual Gaseous Electronics Conference  2008.10 

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    Event date: 2008.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Marriott Dallas/Addison Quorum   Country:Other  

  • Formation, transport of nano-particles using pulse RF discharges with amplitude modulation International conference

    S. Iwashita, H. Miyata, H. Matsuzaki, K. Koga, M. Shiratani

    ICPP2008 Satellite Meeting on Plasma Physics, Advanced Applications in Aso  2008.9 

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    Event date: 2008.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:熊本   Country:Japan  

  • A Comparison of Dust Particles Produced due to Interaction between Graphite, Plasmas: LHD vs Helicon Discharges International conference

    S. Iwashita, K. Koga, M. Shiratani, N. Ashikawa, K. Nishimura, A. Sagara, LHD Experimental Group

    International Congress on Plasma Physics 2008 (ICPP2008)  2008.9 

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    Event date: 2008.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congreess Center   Country:Japan  

  • Substrate Temperature of Deposition Profile of Carbon Films in Trenches Deposited by Plasma CVD International conference

    J. Umetsu, K. Inoue, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    International Congress on Plasma Physics 2008 (ICPP2008)  2008.9 

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    Event date: 2008.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congreess Center   Country:Japan  

  • Optical Emission Spectroscopy of a Magnetically Enhanced Multi-hollow Discharge Plasma for a-Si:H Deposition International conference

    W. M. Nakamura, Y. Kawashima, M. Tanaka, H. Sato, H. Miyahara, H. Matsuzaki, K. Koga, M. Shiratani

    International Congress on Plasma Physics 2008 (ICPP2008)  2008.9 

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    Event date: 2008.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congreess Center   Country:Japan  

  • Manipulation of Nano-blocks Formed in CVD Plasmas using Pulse RF Discharges with Amplitude Modulation International conference

    S. Iwashita, H. Miyata, H. Matsuzaki, K. Koga, M. Shiratani

    International Congress on Plasma Physics 2008 (ICPP2008)  2008.9 

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    Event date: 2008.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congreess Center   Country:Japan  

  • Main Discharge Power Dependence of Emission Intensities in H2+C7H8 Plasmas International conference

    K. Inoue, J. Umetsu, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    International Congress on Plasma Physics 2008 (ICPP2008)  2008.9 

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    Event date: 2008.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congreess Center   Country:Japan  

  • In-situ Measurement of Production Process of Carbon Clusters under Gravity-free Condition by the Mie-scattering Method International conference

    T. Mieno, G. Tan, S. Usuba, K. Koga, M. Shiratani

    International Congress on Plasma Physics 2008 (ICPP2008)  2008.9 

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    Event date: 2008.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congreess Center   Country:Japan  

  • Development of Combinatorial Plasma-process Analyzer for Next-generation Plasma-nano-fabrications International conference

    Y. Setsuhara, K. Takenaka, M. Shiratani, K. Koga, K. Takeda, M. Sekine, M. Hori

    International Congress on Plasma Physics 2008 (ICPP2008)  2008.9 

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    Event date: 2008.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congreess Center   Country:Japan  

  • Detection of Nano-particles Formed in CVD Plasmas using Two-dimentional Photon-counting Laser-light-scattering Method International conference

    H. Miyahara, S. Iwashita, H. Miyata, H. Matsuzaki, K. Koga, M. Shiratani

    International Congress on Plasma Physics 2008 (ICPP2008)  2008.9 

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    Event date: 2008.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congreess Center   Country:Japan  

  • Dependence of Volume Fraction of Clusters on Deposition Rate of a-Si:H films Dposited using a Multi-hollow Discharge Plasma CVD Method International conference

    H. Sato, W. M. Nakamura, H. Miyahara, H. Matsuzaki, K. Koga, M. Shiratani

    International Congress on Plasma Physics 2008 (ICPP2008)  2008.9 

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    Event date: 2008.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congreess Center   Country:Japan  

  • Dependence of Deposition Rate on a Ratio of Ion Flux to Radical Flux in Plasma Anisotropic CVD of C Films International conference

    J. Umetsu, K. Inoue, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    International Congress on Plasma Physics 2008 (ICPP2008)  2008.9 

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    Event date: 2008.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka International Congreess Center   Country:Japan  

  • LHD で捕集したダストの分析 I

    岩下伸也, 古閑一憲, 白谷正治, 芦川直子, 西村清彦, 相良明男

    2008年秋季第69回応用物理学会学術講演会  2008.9 

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    Event date: 2008.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:中部大学   Country:Japan  

  • 振幅変調パルスRF 放電を用いたナノ粒子輸送の観察

    岩下伸也, 宮田大嗣, 松崎秀文, 古閑一憲, 白谷正治, 森貞佳紀, 松木信雄, 池田慎悟

    2008年秋季第69回応用物理学会学術講演会  2008.9 

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    Event date: 2008.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:中部大学   Country:Japan  

  • マルチホロー放電中の電子エネルギー分布への磁場印加効果

    中村ウィリアム誠, 川嶋勇毅, 田中雅敏, 佐藤 宙, 宮原弘臣, 松崎秀文, 古閑一憲, 白谷正治

    2008年秋季第69回応用物理学会学術講演会  2008.9 

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    Event date: 2008.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:中部大学   Country:Japan  

  • マルチホロー放電プラズマCVD法でのa-Si:H製膜速度の圧力依存性

    佐藤宙, 中村ウィリアン誠, 宮原弘臣, 松崎秀文, 古閑一憲, 白谷正治

    2008年秋季第69回応用物理学会学術講演会  2008.9 

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    Event date: 2008.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:中部大学   Country:Japan  

  • イオン・ラジカルフラックスによるトレンチ基板へのカーボン薄膜堆積形状制御

    梅津潤, 井上和彦, 野村卓矢, 古閑一憲, 白谷正治, 節原裕一, 関根誠, 堀勝

    2008年秋季第69回応用物理学会学術講演会  2008.9 

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    Event date: 2008.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:中部大学   Country:Japan  

  • High deposition rate of highly stable a-Si:H films for the third generation of photovoltaics International conference

    W. M. Nakamura, Y. Kawashima, M. Tanaka, H. Sato, H. Miyahara, H. Matsuzaki, K. Koga, M. Shiratani

    The 7th International Workshop on Advanced Plasma Processing, Diagnostics  2008.7 

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    Event date: 2008.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sungkyunkwan University, Suwon   Country:Korea, Republic of  

  • Nanoparticle suppressed plasma CVD for depositing stable a-Si:H (Invited) Invited International conference

    M. Shiratani, K. Koga

    2008 The fifteenth international workshop on active-matrix flatpanel displays and devices  2008.7 

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    Event date: 2008.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:日本科学未来館   Country:Japan  

  • In-situ, ex-situ sampling of dust particles formed due to interaction between graphite, deuterium helicon plasmas International conference

    S. Iwashita, H. Miyata, K. Koga, M. Shiratani

    ITER International Summer School 2008  2008.7 

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    Event date: 2008.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kasuga   Country:Japan  

  • Evaluation of 2D spatial profile of volume fraction of clusters in a-Si:H films deposited by using a multi-hollow discharge plasma CVD method

    中村ウィリアム誠, 川嶋勇毅, 田中雅敏, 佐藤宙, 宮原弘臣, 松崎秀文, 古閑一憲, 白谷正治

    平成20年度応用物理学会九州支部と薄膜・表面物理分科会共催による研究会 (兼)第13回九州薄膜表面研究会 「新奇な薄膜・表面現象とその応用の最前線」  2008.6 

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    Event date: 2008.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • 振幅変調高周波放電を用いたポーラス低誘電率膜の作製と物性評価

    岩下伸也, 宮田大嗣, 松崎秀文, 古閑一憲, 白谷正治, 森貞佳紀, 松木信雄, 池田慎悟

    平成20年度応用物理学会九州支部と薄膜・表面物理分科会共催による研究会 (兼)第13回九州薄膜表面研究会 「新奇な薄膜・表面現象とその応用の最前線」  2008.6 

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    Event date: 2008.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • 基板内微細溝へのカーボン薄膜製膜速度の基板温度依存性

    梅津 潤, 井上和彦, 野村卓矢, 古閑一憲, 白谷正治, 節原裕一, 関根誠, 堀勝

    平成20年度応用物理学会九州支部と薄膜・表面物理分科会共催による研究会 (兼)第13回九州薄膜表面研究会 「新奇な薄膜・表面現象とその応用の最前線」  2008.6 

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    Event date: 2008.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • Deposition profile control of plasma CVD films on nano-patterned substrates (Invited) Invited International conference

    M. Shiratani, K. Koga

    Interfinish 2008  2008.6 

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    Event date: 2008.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Haeundae Grand Hotel in Busan   Country:Korea, Republic of  

  • Rapid deposition of porous ultra low-k films using pulse RF discharges with amplitude modulation International conference

    S. Iwashita, H. Miyata, H. Matsuzaki, K. Koga, M. Shiratani

    Interfinish 2008  2008.6 

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    Event date: 2008.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Haeundae Grand Hotel in Busan   Country:Korea, Republic of  

  • Heat treatment with high pressure water vapor of hydrogenated amorphous silicon International conference

    H. Sato, W. M. Nakamura, H. Miyahara, H. Matsuzaki, K. Koga, M. Shiratani

    Interfinish 2008  2008.6 

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    Event date: 2008.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Haeundae Grand Hotel in Busan   Country:Korea, Republic of  

  • Evaluation of two dimensional spatial profiles of volume fraction of nanoparticles incorporated into a-Si:H films International conference

    W. M. Nakamura, H. Sato, H. Miyahara, H. Matsuzaki, K. Koga, M. Shiratani

    Interfinish 2008  2008.6 

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    Event date: 2008.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Haeundae Grand Hotel in Busan   Country:Korea, Republic of  

  • Control of deposition profile of hard carbon films on substrates having trenches International conference

    J. Umetsu, K. Koga, Y. Setsuhara, M. Sekine, M. Hori, M. Shiratani

    Interfinish 2008  2008.6 

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    Event date: 2008.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Haeundae Grand Hotel in Busan   Country:Korea, Republic of  

  • Si thin films of second and third generation photovoltaics (Invited) Invited International conference

    M. Shiratani, K. Koga, W. M. Nakamura, H. Sato, S. Nunomura, M. Kondo

    International workshop on merging state-of-the-art plasma science into novel technologies  2008.5 

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    Event date: 2008.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Eindhoven   Country:Netherlands  

  • Plasma processes for developing nanosystems in the 3rd generation nanotechnology (Invited) Invited International conference

    M. Shiratani, K. Koga, S. Iwashita, S. Nunomura, M. Kondo

    6th EU-Japan Joint Symposium on Plasma Processing  2008.4 

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    Event date: 2008.4

    Language:English   Presentation type:Oral presentation (general)  

    Venue:沖縄コンベンションセンター   Country:Japan  

  • 2次元フォトンカウンティングレーザー散乱法を用いたCVDプラズマ中のナノ粒子の検出

    岩下伸也, 守田道仁, 宮原弘臣, 松崎秀文, 古閑一憲, 白谷正治, 森貞佳紀, 松木信雄, 池田慎悟

    第55回応用物理学関係連合講演会  2008.3 

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    Event date: 2008.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:日本大学   Country:Japan  

  • 重水素ヘリコンプラズマ・カーボン壁相互作用で生成されるダストのin-situ捕集

    岩下伸也, 古閑一憲, 白谷正治

    第55回応用物理学関係連合講演会  2008.3 

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    Event date: 2008.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:日本大学   Country:Japan  

  • コンビナトリアルプラズマ解析装置の創製:トレンチ基板上へのカーボン薄膜のコンフォーマル堆積

    梅津潤, 古閑一憲, 白谷正治, 節原裕一, 関根誠, 堀勝

    第55回応用物理学関係連合講演会  2008.3 

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    Event date: 2008.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:日本大学   Country:Japan  

  • SiH4有磁場マルチホロー放電の発光分光

    中村ウィリアム誠, 佐藤宙, 宮原弘臣, 松崎秀文, 古閑一憲, 白谷正治

    第55回応用物理学関係連合講演会  2008.3 

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    Event date: 2008.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:日本大学   Country:Japan  

  • Plasma engineering for third generation nanotechnology (Invited) Invited International conference

    M. Shiratani, K. Koga

    International Conference on Plasma Nano Technology & Science 2008  2008.3 

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    Event date: 2008.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  • ミー散乱法によるシリコン微粒子の測定(招待講演) Invited

    白谷正治, 古閑一憲

    東北大学通研共同プロジェクト研究会「微粒子プラズマ科学の展開」  2008.2 

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    Event date: 2008.2

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東北大学   Country:Japan  

  • Emission Spectroscopy of Magnetically Enhanced Multi-Hollow Discharges

    W. M. Nakamura, H. Sato, J. Umetsu, H. Miyahara, H. Matsuzaki, K. Koga, M. Shiratani

    第25回プラズマプロセシング研究会  2008.1 

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    Event date: 2008.1 - 2009.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:山口県教育会館・ゆ~あいプラザ山口県社会福祉会館   Country:Japan  

  • Plasma CVD of nano-particle composite porous low-k films usihg pulse RF discharges with amplitude modulation

    S. Iwashita, Michihito Morita, K. Koga, M. Shiratani

    第25回プラズマプロセシング研究会  2008.1 

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    Event date: 2008.1 - 2009.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:山口県教育会館・ゆ~あいプラザ山口県社会福祉会館   Country:Japan  

  • Measurement of Diffusion, Cohesion Process of Carbon Clusters by Mie Scattering

    T. Mieno, S. Usuba, K. Koga, M. Shiratani

    第25回プラズマプロセシング研究会  2008.1 

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    Event date: 2008.1 - 2009.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:山口県教育会館・ゆ~あいプラザ山口県社会福祉会館   Country:Japan  

  • In-situ observation of nano-block transport in CVD plasmas using two-dimensional photon counting laser-light scattering method

    S. Iwashita, Michihito Morita, K. Koga, M. Shiratani

    第25回プラズマプロセシング研究会  2008.1 

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    Event date: 2008.1 - 2009.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:山口県教育会館・ゆ~あいプラザ山口県社会福祉会館   Country:Japan  

  • Ha emission intensity, electron density in anisotropic CVD plasmas

    J. Umetsu, K. Inoue, K. Takenaka, H. Matsuzaki, K. Koga, M. Shiratani

    第25回プラズマプロセシング研究会  2008.1 

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    Event date: 2008.1 - 2009.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:山口県教育会館・ゆ~あいプラザ山口県社会福祉会館   Country:Japan  

  • Formation of carbon dust particles due to interaction between graphite, pulse deuterium helicon plasmas

    S. Iwashita, H. Matsuzaki, K. Koga, M. Shiratani

    第25回プラズマプロセシング研究会  2008.1 

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    Event date: 2008.1 - 2009.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:山口県教育会館・ゆ~あいプラザ山口県社会福祉会館   Country:Japan  

  • High-quality amorphous Si formation by sophisticated plasma technology (Invited) Invited International conference

    M. Shiratani, K. Koga

    6th International Workshop of Advanced Plasma Processing and Diagnostics  2008.1 

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    Event date: 2008.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  • LHDにおけるダストのその場サンプリングと分析 (招待講演) Invited

    白谷正治, 切通聡, 岩下伸也, 古閑一憲, 芦川直子, 西村清彦, 相良明男, LHD実験グループ

    第5回LHDにおけるPWI共同研究・検討会  2007.6 

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    Event date: 2007.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:核融合科学研究所   Country:Japan  

  • Control of nanostrucuture of plasma CVD films and its application to third generation photovoltaics (Invited) Invited International conference

    M. Shiratani, W. M. Nakamura, D. Shimokawa, H. Miyahara, K. Koga

    Fifth EU-Japan Joint Symposium on Plasma Processing  2007.3 

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    Event date: 2007.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Beograde   Country:Other  

  • Nanocrystalline silicon/amorphous silicon composite material (Invited) Invited International conference

    M. Shiratani, K. Koga, S. Nunomura, M. Kondo

    International Workshop upon Thin Film Silicon Solar Cells  2007.2 

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    Event date: 2007.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nara   Country:Japan  

  • 無対流炭素クラスターの拡散・凝集過程のミー散乱測定

    三重野哲, 薄葉州, 古閑一憲, 白谷正治

    日本学術会議主催 第24回宇宙利用シンポジウム  2007.1 

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    Event date: 2007.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:日本科学未来館   Country:Japan  

  • In-situ sampling of dust in main and glow discharges in LHD and its analysis (Invited) Invited International conference

    M. Shiratani, S. Kiridoshi, K. Koga, N. Ahikawa, K. Nishimura, A. Sagara, A. Komori, LHD Experimental Group

    Joint US-Japan Workshop on Dynamics of Dust Particles in Fusion Devices and Non-diffusive Plasma Transport and Its Statistics in Edge Plasmas of Fusion  2007.1 

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    Event date: 2007.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya   Country:Japan  

  • Si thin film deposition process for the future solar cells (Invited) Invited International conference

    M. Shiratani, K. Koga, S. Iwashita, W. M. Nakamura, H. Miyahara, S. Nunomura, M. Kondo

    4th International Workshop on Advanced Plasma Processing and Diagnostics & Thin Film Technology for Electronic Materials  2006.12 

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    Event date: 2006.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya   Country:Japan  

  • Production of size-controlled Si nano-crystallites using SiH4+H2 discharges and its application to optoelectronic films (Invited) Invited International conference

    M. Shiratani, K. Koga, Y. Watanabe, S. Nunomura, and M. Kondo

    International Symposium on EcoTopia Science2005 (ISETS05)  2005.8 

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    Event date: 2005.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya   Country:Japan  

  • プラズマプロセスによる結晶シリコンナノ粒子の生成 (招待講演) Invited

    白谷正治, 古閑一憲, 渡辺征夫

    第6回プラズマナノテクノロジ-研究会  2003.12 

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    Event date: 2003.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学   Country:Japan  

  • 革新的プラズマCVDを目指して (招待講演) Invited

    白谷正治, 古閑一憲, 渡辺征夫

    第3回インテリジェント・ナノプロセス研究会  2003.12 

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    Event date: 2003.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東北大学   Country:Japan  

  • Anisotropic Cu Deposition using Plasma Chemical Vapor Deposition (Invited) Invited International conference

    M. Shiratani, K. Takenaka, M. Takeshita, M. Kita, K. Koga, and Y. Watanabe

    American Vacuum Society 50th International Symposium  2003.11 

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    Event date: 2003.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Baltimore   Country:Other  

  • 銅のプラズマCVD におけるサブミクロントレンチへの成膜形状制御

    白谷正治, 竹中弘祐, 古閑一憲, 渡辺征夫

    九州・山口プラズマ研究会  2003.11 

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    Event date: 2003.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:九州大学   Country:Japan  

  • VHFプラズマCVDによる結晶シリコンナノ粒子の生成と膜への取り込み (招待講演) Invited

    白谷正治, 古閑一憲, 渡辺征夫

    第30回アモルファスセミナー  2003.11 

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    Event date: 2003.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:岐阜ルネッサンスホテル   Country:Japan  

  • Silicon nano-structure formation using plasma under micro-G and one G conditions (Invited) Invited International conference

    M. Shiratani, T. Kakeya, K. Koga, and Y. Watanabe

    56th Annual Gaseous Electronics Conference  2003.10 

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    Event date: 2003.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:San Francisco   Country:Other  

  • Copper plasma CVD (Invited) Invited International conference

    M. Shiratani, K. Takenaka, M. Takeshita, K. Koga, and Y. Watanabe

    37th IUVSTA Workshop on Plasma Deposition of Advanced Materials  2003.9 

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    Event date: 2003.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Rolduc   Country:Netherlands  

  • プラズマを用いたSiナノ粒子の形成に対する重力の影響

    白谷正治, 掛谷知秀, 古閑一憲, 渡辺征夫

    電気学会九州支部  2003.9 

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    Event date: 2003.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:崇城大学   Country:Japan  

  • Control of deposition profile of Cu for LSI interconnects by plasma chemical vapor deposition (Invited) Invited International conference

    M. Shiratani, K. Koga, and Y. Watanabe

    16th International Symposium on Plasma Chemistry  2003.6 

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    Event date: 2003.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Taormina   Country:Italy  

  • Carbon particle formation due to interaction between H2 plasmas, carbon wall International conference

    M. Shiratani, R. Uehara, K. Koga, Y. Watanabe

    Fine Particle Plasmas: Basis, Applications - Third Workshop on Fine Particle Plasmas  2002.12 

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    Event date: 2002.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • 炭素壁と水素プラズマ相互作用に起因する微粒子形成過程解明のための研究

    上原 龍児, 古閑 一憲, 白谷 正治, 渡辺 征夫, 小森 彰夫

    プラズマ・核融合学会 九州・沖縄・山口支部 第6回支部大会  2002.12 

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    Event date: 2002.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • プラズマCVD法によるLSI用微細銅配線形成

    竹中 弘祐, 大西 将夫, 竹下 学, 木下 年夫, 古閑 一憲, 白谷 正治, 渡辺 征夫, 神元 俊哉

    電気学会 プラズマ研究会  2002.12 

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    Event date: 2002.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Silicon nano-particles formed under one-G, micro-gravity plasmas International conference

    M. Shiratani, M. Kai, K. Koga, Y. Watanabe

    Fine Particle Plasmas: Basis, Applications - Third Workshop on Fine Particle Plasmas  2002.12 

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    Event date: 2002.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • Conformal, anisotorpic deposition of Cu films using H-assisted plasma CVD International conference

    M. Shiratani, K. Takenaka, M. Onishi, K. Koga, Y. Watanabe, T. Shingen

    American Vaccum Society 49th International Symposium  2002.11 

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    Event date: 2002.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • Cu薄膜形成プラズマCVDにおける核発生と島成長

    竹中 弘祐, 大西 将夫, 竹下 学, 古閑 一憲, 白谷 正治, 渡辺 征夫, 神元 俊哉

    平成14年度応用物理学会九州支部講演会  2002.11 

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    Event date: 2002.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Cu(EDMDD)2を用いた水素原子アシストプラズマCVDでの高速成膜

    竹下 学, 竹中 弘祐, 大西 将夫, 木下 年夫, 古閑 一憲, 白谷 正治, 渡辺 征夫, 神元 俊哉

    平成14年度応用物理学会九州支部講演会  2002.11 

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    Event date: 2002.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • a-Si:H薄膜のArプラズマスパッタリングによる新構造Si微粒子の形成

    甲斐 幹英, 掛谷 知秀, 古閑 一憲, 白谷 正治, 渡辺 征夫

    平成14年度応用物理学会九州支部講演会  2002.11 

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    Event date: 2002.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 水素原子アシストプラズマCVD法によるLSI用銅配線形成

    白谷 正治, 古閑 一憲, 渡辺 征夫

    第18回九州・山口プラズマ研究会  2002.11 

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    Event date: 2002.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • ナノクラスタ制御プラズマCVDと高品質, 光安定a-Si:H太陽電池への応用

    白谷 正治, 古閑 一憲, 渡辺 征夫

    第29回アモルファスセミナー  2002.11 

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    Event date: 2002.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 微重力プラズマ中のナノ粒子形成

    白谷 正治, 甲斐 幹英, 古閑 一憲, 渡辺 征夫

    第18回日本マイクログラビティ応用学会学術講演会  2002.10 

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    Event date: 2002.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Anisotropic deposition of copper by plasma CVD method International conference

    K. Takenaka, M. Onishi, M. Takenaka, T. Kinoshita, K. Koga, M. Shiratani, Y. Watanabe

    24th International Symposium on Dry Process  2002.10 

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    Event date: 2002.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • Conformal deposition of ultra thin, smooth Cu films in trenches using Cu(EDMDD)2 by H-assisted plasma CVD International conference

    M. Shiratani, K. Takenaka, M. Onishi, M. Takeshita, T. Kinoshita, K. Koga, Y. Watanabe, T. Shingen

    2nd ECS International Semiconductor Technology Conference  2002.9 

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    Event date: 2002.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • 銅のプラズマ異方性CVDの成膜機構の検討

    竹中 弘祐, 大西 将夫, 竹下 学, 古閑 一憲, 白谷 正治, 渡辺 征夫

    第62回応用物理学学術講演会  2002.9 

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    Event date: 2002.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • プラズマスパッタリングにより形成した新構造シリコンナノ微粒子

    甲斐 幹英, 古閑 一憲, 白谷 正治, 渡辺 征夫

    第62回応用物理学学術講演会  2002.9 

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    Event date: 2002.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • シランプラズマ中のSiクラスタ成長過程に対する水素希釈の影響

    針貝 篤史, 古閑 一憲, 白谷 正治, 渡辺 征夫

    第62回応用物理学学術講演会  2002.9 

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    Event date: 2002.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Cu(EDMDD)2を用いたH原子アシストプラズマCVD法によるCu薄膜形成:主放電電力依存性

    竹中 弘祐, 竹下 学, 大西 将夫, 古閑 一憲, 白谷 正治, 渡辺 征夫, 神元俊哉

    第62回応用物理学学術講演会  2002.9 

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    Event date: 2002.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • プラズマを用いたSi新ナノ構造形成

    白谷 正治, 古閑 一憲, 渡辺 征夫

    第62回応用物理学学術講演会  2002.9 

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    Event date: 2002.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Correlation between Si cluster amount in silane HF discharges, quality of a-Si:H films International conference

    M. Shiratani, M. Kai, K. Imabeppu, K. Koga, Y. Watanabe

    Joint Meeting of 16th European Conference on Atomic, Molecular Physics of Ionized Gases, 5th International Conference on Reactive Plasmas  2002.7 

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    Event date: 2002.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • Conformal deposition of pure Cu films in trenches by H-assisted plasma CVD using Cu(EDMDD)2 International conference

    K. Takenaka, H. J. Jin, M. Onishi, K. Koga, M. Shiratani, Y. Watanabe, T. Shingen

    Joint Meeting of 16th European Conference on Atomic, Molecular Physics of Ionized Gases, 5th International Conference on Reactive Plasmas  2002.7 

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    Event date: 2002.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • Anisotropic deposition of Cu with H-assisted plasma CVD International conference

    K. Takenaka, H. J. Jin, M. Onishi, K. Koga, M. Shiratani, Y. Watanabe

    Joint Meeting of 16th European Conference on Atomic, Molecular Physics of Ionized Gases, 5th International Conference on Reactive Plasmas  2002.7 

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    Event date: 2002.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • Cluster-supressed plasma CVD for deposition of high quality a-Si:H films (Invited) International conference

    M. Shiratani, K. Koga, Y. Watanabe

    European Materials Research Society 2002 Spring Meeting  2002.6 

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    Event date: 2002.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • Anisotropic deposition of copper by H-assisted plasma chemical vapor deposition International conference

    K. Takenaka, M. Shiratani, M. Onishi, M. Takeshita, T. Kinoshita, K. Koga, Y. Watanabe

    European Materials Research Society 2002 Spring Meeting  2002.6 

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    Event date: 2002.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • Deposition of Cu films in trenches for LSI interconnects by H-assisted plasma CVD method International conference

    K. Takenaka, M. Onishi, T. Kinoshita, K. Koga, M. Shiratani, Y. Watanabe, T. Shingen

    International Workshop on Information, Electrical Engineering (IWIE2002)  2002.5 

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    Event date: 2002.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • 低圧シランプラズマ中の微粒子成長機構

    白谷 正治, 古閑 一憲, 渡辺 征夫

    北陸先端科学技術大学院大学材料科学研究科研究科フォーラム  2002.3 

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    Event date: 2002.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • H原子アシストプラズマCVD法による銅の異方性成膜

    竹中 弘祐, 大西 将夫, 金 洪杰, 古閑 一憲, 白谷 正治, 渡辺 征夫

    第49回応用物理学関係連合講演会  2002.3 

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    Event date: 2002.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Cu(EDMDD)2を用いたH原子アシストプラズマCVDによるトレンチ内への銅薄膜コンフォーマル堆積

    竹中 弘祐, 金 洪杰, 大西 将夫, 古閑 一憲, 白谷 正治, 渡辺 征夫

    第49回応用物理学関係連合講演会  2002.3 

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    Event date: 2002.3

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Deposition of high quality Si films by suppressing cluster growth in SiH4 high-frequency discharges International conference

    M. Shiratani, K. Koga, Y. Watanabe

    Seminar of Particle Technology Division of Korean Chemical Engineering  2002.2 

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    Event date: 2002.2

    Language:English   Presentation type:Oral presentation (general)  

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  • クラスタ抑制プラズマCVD法によるSi薄膜の高品質化

    渡辺 征夫, 古閑 一憲, 白谷 正治

    シリコンテクノロジー第37回研究会  2002.1 

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    Event date: 2002.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Cluster formation model in SiH4 plasmas, its application to deposition of high quality a-Si:H films International conference

    M. Shiratani, M. Kai, K. Imabeppu, K. Koga, Y. Watanabe

    Fine Particle Plasmas: Basis, Applications - Second Workshop on Fine Particle Plasmas  2001.12 

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    Event date: 2001.12

    Language:English   Presentation type:Oral presentation (general)  

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  • プラズマ・カーボン壁相互作用による微粒子形成過程研究用装置の開発

    徳安 達郎, 上原 龍児, 古閑 一憲, 白谷 正治, 渡辺 征夫

    平成13年度応用物理学会九州支部講演会  2001.12 

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    Event date: 2001.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • シランプラズマ中に発生するSiクラスタの核発生・初期成長に対する放電周波数の効果

    針貝 篤史, 古閑 一憲, 白谷 正治, 渡辺 征夫

    平成13年度応用物理学会九州支部講演会  2001.12 

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    Event date: 2001.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • シランCVDプラズマ中のクラスタ量とa-Si:H薄膜の膜質の関係

    今別府 謙吾, 甲斐 幹英, 古閑 一憲, 白谷 正治, 渡辺 征夫

    平成13年度応用物理学会九州支部講演会  2001.12 

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    Event date: 2001.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • H原子アシストプラズマCVD法による銅の異方性成膜

    大西 将夫, 竹中 弘祐, 金 洪杰, 古閑 一憲, 白谷 正治, 渡辺 征夫

    平成13年度応用物理学会九州支部講演会  2001.12 

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    Event date: 2001.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Cu(EDDMD)2を用いたプラズマCVD法における銅薄膜の高純度化と発生核の高密度化

    竹中 弘祐, 金 洪杰, 大西 将夫, 古閑 一憲, 白谷 正治, 渡辺 征夫, 神元 俊哉

    平成13年度応用物理学会九州支部講演会  2001.12 

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    Event date: 2001.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • シランプラズマ中のクラスタとシリコン系薄膜太陽電池

    白谷 正治, 古閑 一憲, 渡辺 征夫

    第17回九州・山口プラズマ研究会  2001.11 

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    Event date: 2001.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Deposition of pure copper thin films by H-assisted plasma CVD using a new Cu complex Cu(EDMDD)2 International conference

    K. Takenaka, H. J. Jin, M. Onishi, K. Koga, M. Shiratani, Y. Watanabe

    International Symposium on Dry Process  2001.11 

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    Event date: 2001.11

    Language:English   Presentation type:Oral presentation (general)  

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  • Electron-, ion-densities in silane high frequency discharges International conference

    Y. Watanabe, A. Hariaki, K. Koga, M. Shiratani

    54th Annual Gaseous Electronics Conference  2001.10 

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    Event date: 2001.10

    Language:English   Presentation type:Oral presentation (general)  

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  • 銅プラズマCVDにおけるトレンチ内製膜速度の異方性

    大西 将夫, 金 洪杰, 竹中 弘祐, 古閑 一憲, 白谷 正治, 渡辺 征夫

    平成13年度電気関係学会九州支部連合大会  2001.10 

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    Event date: 2001.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 超高品質a-Si:H薄膜作製用プラズマCVD装置のクラスタ計測

    甲斐 幹英, 今別府 謙吾, 古閑 一憲, 白谷 正治, 渡辺 征夫

    平成13年度電気関係学会九州支部連合大会  2001.10 

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    Event date: 2001.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • シラン高周波放電中のクラスタ成長に対する水素希釈と放電周波数の効果

    針貝 篤史, 古閑 一憲, 白谷 正治, 渡辺 征夫

    平成13年度電気関係学会九州支部連合大会  2001.10 

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    Event date: 2001.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Cu(EDMDD)2を用いた銅プラズマCVD:膜質の全圧と基板温度への依存性

    竹中 弘祐, 金 洪杰, 大西 将夫, 古閑 一憲, 白谷 正治, 渡辺 征夫

    平成13年度電気関係学会九州支部連合大会  2001.10 

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    Event date: 2001.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • CuプラズマCVDと次世代配線への応用

    白谷 正治, 竹中 弘祐, 金 洪杰, 大西 将夫, 古閑 一憲, 渡辺 征夫

    電気学会 電子・情報・システム部門大会  2001.9 

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    Event date: 2001.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • クラスタ抑制プラズマCVD法による超高品質a-Si:H薄膜形成(招待講演)

    渡辺 征夫, 白谷 正治, 古閑 一憲

    第62回応用物理学学術講演会 非晶質:分科内総合講演「アモルファスシリコンの光劣化防止策」  2001.9 

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    Event date: 2001.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Cu(EDMDD)2を用いたH原子源付プラズマCVD装置による高純度銅薄膜形成

    竹中 弘祐, 金 洪杰, 大西 将夫, 古閑 一憲, 白谷 正治, 渡辺 征夫, 渡邉 剛

    第62回応用物理学学術講演会  2001.9 

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    Event date: 2001.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • H原子源付プラズマCVD装置で堆積したCu薄膜中の不純物濃度分布

    白谷 正治, 金 洪杰, 大西 将夫, 竹中 弘祐, 古閑 一憲, 渡辺 征夫

    第62回応用物理学学術講演会  2001.9 

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    Event date: 2001.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Behavior of a particle injected in ion sheath of electropositive, electronegative gas discharges International conference

    M. Shiratani, A. Toyozawa, K. Koga, Y. Watanabe

    International Conference on Phenomena in Ionized Gases  2001.7 

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    Event date: 2001.7

    Language:English   Presentation type:Oral presentation (general)  

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  • Nucleation, subsequent growth of clusters in reactive plasmas (invited) International conference

    Y. Watanabe, M. Shiratani, K. Koga

    International Conference on Phenomena in Ionized Gases  2001.7 

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    Event date: 2001.7

    Language:English   Presentation type:Oral presentation (general)  

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  • Clustering phenomena in low-pressure reactive plasmas: base, applications (invited) International conference

    Y. Watanabe, M. Shiratani, K. Koga

    15th International Symposium on Plasma Chemistry  2001.7 

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    Event date: 2001.7

    Language:English   Presentation type:Oral presentation (general)  

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  • Development of H-assisted plasma CVD reactor for Cu interconnects International conference

    M. Shiratani, H. J. Jin, K. Takenaka, K. Koga, T. Kinoshita, Y. Watanabe

    International Conference on Phenomena in Ionized Gases  2001.7 

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    Event date: 2001.7

    Language:English   Presentation type:Oral presentation (general)  

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  • アモルファスシリコン太陽電池の高速・高品質製造技術の開発 (招待講演)

    渡辺 征夫, 白谷 正治, 古閑 一憲

    新エネルギーシンポジウム  2001.6 

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    Event date: 2001.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Electron, ion densities in SiH4 HF discharges International conference

    Y. Watanabe, M. Shiratani, K. Koga

    9th Workshop on the Physics of Dusty Plasmas  2001.5 

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    Event date: 2001.5

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  • Cluster-less plasma CVD reactor, its application to a-Si:H film deposition International conference

    M. Shiratani, K. Koga, Y. Watanabe

    2001 MRS Spring Meeting  2001.4 

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    Event date: 2001.4

    Language:English   Presentation type:Oral presentation (general)  

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  • 太陽電池用超高品質アモルファスSi薄膜の超高速作製のためのクラスタ制御プラズマCVD法の開発 (招待講演)

    渡辺 征夫, 白谷 正治, 古閑 一憲

    第13回太陽光発電連絡会  2001.4 

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    Event date: 2001.4

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • H-assisted plasma CVD using Cu(hfac)2, Cu(EDMDD)2 International conference

    M. Shiratani, H. J. Jin, K. Takenaka, K. Koga, T. Kinoshita, Y. Watanabe

    2001 MRS Spring Meeting  2001.4 

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    Event date: 2001.4

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  • H原子源付プラズマCVD装置による高品質Cu極薄膜の堆積

    白谷 正治, 金 洪杰, 竹中 弘祐, 古閑 一憲, 渡辺 征夫

    第48回応用物理学関係連合講演会  2001.3 

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    Event date: 2001.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Cu(EDMDD)2を用いたプラズマCVD法による銅薄膜形成

    竹中 弘祐, 金 洪杰, 古閑 一憲, 白谷 正治, 渡辺 征夫

    第48回応用物理学関係連合講演会  2001.3 

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    Event date: 2001.3

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • イオンシースに注入した微粒子の軌跡

    白谷 正治, 古閑 一憲, 豊澤 聡大, 渡辺 征夫

    第48回応用物理学関係連合講演会  2001.3 

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    Event date: 2001.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Behavior of a particle injected in ion sheath International conference

    M. Shiratani, A. Toyozawa, K. Koga, Y. Watanabe

    Plasma Science Symposium 2001/ 18th Symposium on Plasma Processing  2001.1 

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    Event date: 2001.1

    Language:English   Presentation type:Oral presentation (general)  

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  • Plasma CVD method for Cu interconnects in ULSI (invited) International conference

    M. Shiratani, K. Koga, Y. Watanabe

    Plasma Science Symposium 2001/ 18th Symposium on Plasma Processing  2001.1 

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  • Measurements of surface reaction probability of SiH3 International conference

    M. Shiratani, N. Shiraishi, K. Koga, Y. Watanabe

    Plasma Science Symposium 2001/ 18th Symposium on Plasma Processing  2001.1 

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  • Development of cluster-suppressed plasma CVD reactor for high quality a-Si:H film deposition International conference

    M. Shiratani, T. Sonoda, N. Shikatani, K. Koga, Y. Watanabe

    Plasma Science Symposium 2001/ 18th Symposium on Plasma Processing  2001.1 

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    Event date: 2001.1

    Language:English   Presentation type:Oral presentation (general)  

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  • 高品質a-Si:H作製のためのクラスタ抑制プラズマCVD装置の開発

    白谷 正治, 園田 剛士, 古閑 一憲, 渡辺 征夫, 鹿谷 昇

    平成12年度応用物理学会九州支部講演会  2000.12 

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    Event date: 2000.12

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • 水素希釈シラン高周波放電中の電子密度のシラン分圧依存性

    田中 健一, 古閑 一憲, 白谷 正治, 渡辺 征夫

    平成12年度応用物理学会九州支部講演会  2000.12 

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    Event date: 2000.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Cu(EDDMD)2を用いたプラズマCVD法による銅薄膜堆積

    竹中 弘祐, 金 洪杰, 古閑 一憲, 白谷 正治, 渡辺 征夫

    平成12年度応用物理学会九州支部講演会  2000.12 

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    Event date: 2000.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • LSI内微細銅配線形成のためのプラズマCVD法の開発

    白谷 正治, 古閑 一憲, 渡辺 征夫

    第16回九州・山口プラズマ研究会  2000.11 

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    Event date: 2000.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • シランプラズマ中のクラスタ計測と高品質a-Si:H薄膜の高速作製法の開発

    渡辺 征夫, 古閑 一憲, 白谷 正治

    第16回九州・山口プラズマ研究会  2000.11 

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    Event date: 2000.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • H assisted control of quality, conformality in Cu film deposition using plasma CVD method International conference

    M. Shiratani, H. J. Jin, K. Takenaka, K. Koga, Y. Watanabe

    Advanced Metallization Conference 2000  2000.10 

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    Event date: 2000.10

    Language:English   Presentation type:Oral presentation (general)  

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  • Effects of H irradiation on properties of Cu films deposited by plasma CVD International conference

    Y. Watanabe, K. Koga, H. J. Jin, Y. Nakatake, T. Kinoshita, M. Shiratani

    53rd Annual Gaseous Electronics Conference  2000.10 

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    Event date: 2000.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • D2+SiH4高周波放電で作製した微粒子とa-Si:H膜の組成

    白谷 正治, 園田 剛士, 鹿谷 昇, 古閑 一憲, 渡辺 征夫

    第61回応用物理学学術講演会  2000.9 

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    Event date: 2000.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 新銅錯体材料Cu(EDMDD) 2を用いたプラズマCVDによる銅薄膜作製

    竹中 弘祐, 金 洪杰, 古閑 一憲, 白谷 正治, 渡辺 征夫

    平成12年度電気関係学会九州支部連合大会  2000.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

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  • プラズマイオンシース中の微粒子挙動の観察

    豊澤 聡大, 古閑 一憲, 白谷 正治, 渡辺 征夫

    平成12年度電気関係学会九州支部連合大会  2000.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • プラズマCVD法により微細トレンチに形成したCu薄膜の段差被覆性

    金 洪杰, 竹中 弘祐, 古閑 一憲, 白谷 正治, 渡辺 征夫

    第61回応用物理学学術講演会  2000.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

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  • トレンチへの段差被覆性に与えるSiH4トライオードrf放電の接地電極サイズの影響

    白石 信仁, 古閑 一憲, 白谷 正治, 渡辺 征夫

    第61回応用物理学学術講演会  2000.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • シランプラズマ中のクラスタ成長に及ぼす励起周波数・水素希釈の影響

    田中 健一, 古閑 一憲, 白谷 正治, 渡辺 征夫

    平成12年度電気関係学会九州支部連合大会  2000.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • D2+SiH4高周波放電により作製した微粒子と水素化アモルファスシリコン膜の組成

    園田 剛士, 鹿谷 昇, 古閑 一憲, 白谷 正治, 渡辺 征夫

    平成12年度電気関係学会九州支部連合大会  2000.9 

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    Event date: 2000.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 銅の高アスペクト比パターン埋め込みのためのラジカル表面反応制御(招待講演)

    白谷 正治, 古閑 一憲, 渡辺 征夫

    第61回応用物理学学術講演会シンポジウム「Feature Profile Evolutionのためのプラズマ物理化学」  2000.9 

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    Event date: 2000.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Formation kinetics, control of dust particles in capacitively-coupled reactive plasmas (invited) International conference

    Y. Watanabe, M. Shiratani, K. Koga

    International Topical Conference on Plasma Physics: Colloidal Plasma Science  2000.5 

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    Event date: 2000.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • Recent progress in study on cluster growth kinetics in silane rf plasmas (invited) International conference

    Y. Watanabe, M. Shiratani, K. Koga

    4th European Workshop on Dusty, Colloidal Plasma  2000.5 

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    Event date: 2000.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • Methods of suppressing cluster growth in silane rf discharges International conference

    M. Shiratani, S. Maeda, Y. Matsuoka, K. Tanaka, K. Koga, Y. Watanabe

    2000 MRS Spring Meeting  2000.4 

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    Event date: 2000.4

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • Initial growth kinetics of clusters in processing plasmas International conference

    Y. Watanabe, M. Shiratani, K. Koga

    8th Workshop on the Physics of Dusty Plasma  2000.4 

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    Event date: 2000.4

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • Thin smooth Cu films deposited in deep submicron trench by plasma CVD reactor with H atom source International conference

    M. Shiratani, H. J. Jin, Y. Nakatake, K. Koga, Y. Watanabe

    2000 MRS Spring Meeting  2000.4 

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    Event date: 2000.4

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • シラン高周波放電中ナノ微粒子の成長過程:基板の効果

    白谷 正治, 前田 真一, 古閑 一憲, 渡辺 征夫

    第47回応用物理学関係連合講演会  2000.3 

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    Event date: 2000.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • プラズマCVD法により形成したCu薄膜の結晶サイズに及ぼすH原子照射の効果

    金 洪杰, 中武 靖裕, 古閑 一憲, 白谷 正治, 渡辺 征夫

    第47回応用物理学関係連合講演会  2000.3 

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    Event date: 2000.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • パルス及び定常高周波トライオードSiH4 放電中のラジカルの表面反応確率

    白石 信仁, 古閑 一憲, 白谷 正治, 渡辺 征夫

    第47回応用物理学関係連合講演会  2000.3 

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    Event date: 2000.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Control of surface reactions for conformal deposition of Cu in fine trench structure (invited) International conference

    M. Shiratani, H. J. Jin, Y. Nakatake, K. Koga, Y. Watanabe

    'International Workshop on Basic Aspects of Non-equilibrium Plasmas Interacting with Surfaces  2000.1 

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    Event date: 2000.1

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • シラン高周波放電中ナノ微粒子成長に与える基板の影響

    白谷 正治, 古閑 一憲, 前田 真一, 渡辺 征夫

    第17回プラズマプロセシング研究会  2000.1 

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    Event date: 2000.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Surface reaction probability of radicals in CW, pulsed RF triode SiH4 discharges International conference

    M. Shiratani, N. Shiraishi, K. Koga, Y. Watanabe

    International Workshop on Basic Aspects of Non-equilibrium Plasmas Interacting with Surfaces  2000.1 

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    Event date: 2000.1

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • H2希釈SiH4高周波放電中のH密度測定

    園田 剛士, 中村 幸作, 古閑 一憲, 白谷 正治, 渡辺 征夫

    平成11年度応用物理学会九州支部講演会  1999.12 

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    Event date: 1999.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 直流放電イオンシース中の微粒子挙動の観察

    波多江 哲, 豊澤 聡大, 古閑 一憲, 福澤 剛, 白谷 正治, 渡辺 征夫

    平成11年度応用物理学会九州支部講演会  1999.12 

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    Event date: 1999.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • プラズマCVD法によるトレンチへの銅への埋め込み特性

    金 洪杰, 中武 靖裕, 古閑 一憲, 白谷 正治, 渡辺 征夫

    平成11年度応用物理学会九州支部講演会  1999.12 

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    Event date: 1999.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • SiH4高周波放電によるa-Si:H成膜と微粒子量との関係

    前田 真一, 古閑 一憲, 白谷 正治, 渡辺 征夫

    平成11年度応用物理学会九州支部講演会  1999.12 

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    Event date: 1999.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • シランプラズマ中のクラスターとa-Si:H成膜

    渡辺 征夫, 古閑 一憲, 白谷 正治

    第15回九州・山口プラズマ研究会  1999.11 

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    Event date: 1999.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • A-Si:H Film Deposition Using Plasma CVD with Suppression of Cluster-Size Particles International conference

    M. Shiratani, S. Maeda, Y. Matsuoka, K. Tanaka, K. Koga, Y. Watanabe

    1999 American Vacuum Society International Symposium  1999.10 

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    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • 発光分光法によるH2+SiH4高周波放電中のH密度の測定

    中村 幸作, 園田 剛士, 古閑 一憲, 白谷 正治, 渡辺 征夫

    平成11年度電気関係学会九州支部連合大会  1999.10 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 水素希釈および電極加熱によるシラン高周波放電中微小微粒子の抑制効果

    田中 健一, 松岡 泰弘, 古閑 一憲, 白谷 正治, 渡辺 征夫

    平成11年度電気関係学会九州支部連合大会  1999.10 

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    Event date: 1999.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • イオンシース中の微粒子挙動の観察

    豊澤 聡大, 波多江 哲, 古閑 一憲, 白谷 正治, 渡辺 征夫

    平成11年度電気関係学会九州支部連合大会  1999.10 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • SiH4高周波トライオード放電中のSiH3密度空間分布とSiH3の表面反応確率

    白石 信仁, 古閑 一憲, 白谷 正治, 渡辺 征夫

    平成11年度電気関係学会九州支部連合大会  1999.10 

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    Event date: 1999.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • H原子原付プラズマCVD装置を用いた微細トレンチへの銅の埋め込み

    中武 靖裕, 金 洪杰, 古閑 一憲, 白谷 正治, 渡辺 征夫

    平成11年度電気関係学会九州支部連合大会  1999.10 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Growth Suppression of Cluster-Size Particles in Silane RF Discharges International conference

    Y. Watanabe, M. Shiratani, K. Koga, S. Maeda, Y. Matsuoka, K. Tanaka

    52nd Annual Gaseous Electronics Conference  1999.10 

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    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • Complete Filling of High-Purity Copper in Sub-quater-Micron Trench Structure Using Plasma CVD Reactor with H Atom Source International conference

    H. Jin, M. Shiratani, Y. Nakatake, K. Koga, T. Kinoshita, Y. Watanabe

    1999 American Vacuum Society International Symposium  1999.10 

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    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • Behabior of a Particle in Plasma-Wall Sheath Region International conference

    Y. Watanabe, M. Shiratani, K. Koga, A. Hatae, A. Toyozawa

    52nd Annual Gaseous Electronics Conference  1999.10 

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    Event date: 1999.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • H2+SiH4高周波放電中のH密度

    白谷 正治, 中村 幸作, 園田 剛士, 古閑 一憲, 渡辺 征夫

    第60回応用物理学学術講演会  1999.9 

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    Event date: 1999.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • プラズマCVD法による高品質銅の微細トレンチ埋め込み

    金 洪杰, 中武 靖裕, 古閑 一憲, 白谷 正治, 渡辺 征夫

    第60回応用物理学学術講演会  1999.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • シラン高周波放電中微粒子成長抑制条件下でのa-Si:H膜堆積

    白谷 正治, 前田 真一, 古閑 一憲, 渡辺 征夫

    第60回応用物理学学術講演会  1999.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Growth Processes of Particles up to Nanometer in High-Frequency SiH4, GeH4 RF Plasmas (invited) International conference

    Y. Watanabe, M. Shiratani, T. Fukuzawa, K. Koga

    24th International Conference on Phenomena in Ionized Gases  1999.7 

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    Event date: 1999.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • Recent Advance in Understanding Formation of Particles in SiH4 RF Discharges (invited) International conference

    M. Shiratani, K. Koga, Y. Watanabe

    12th Symposium on Plasma Science, Materials  1999.6 

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    Event date: 1999.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • Void Free Filling of High-Purity Copper in Subquater-Micron Trench Structure Using Plasma Reactor with H Atom Source International conference

    H. Jin, M. Shiratani, Y. Nakatake, K. Koga, T. Fukuzawa, T. Kinoshita, Y. Watanabe, M. Toyofuku

    12th Symposium on Plasma Science, Materials  1999.6 

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    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • 粒子径の異なるインジウム・スズ酸化物ナノ粒子の経気道性曝露による生体影響評価

    田中 昭代, 松村 渚, 柴田 悦子, 田中 佑樹, 小椋 康光, 古閑 一憲, 白谷 正治, 長野 嘉介

    産業衛生学雑誌  2022.5  (公社)日本産業衛生学会

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  • インジウム・スズ酸化物ナノ粒子の皮下投与による亜慢性影響

    松村 渚, 田中 佑樹, 小椋 康光, 古閑 一憲, 白谷 正治, 長野 嘉介, 田中 昭代

    Biomedical Research on Trace Elements  2022.9  (一社)日本微量元素学会

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  • インジウム・スズ酸化物ナノ粒子の皮下および気管内投与による生体影響の比較

    田中 昭代, 松村 渚, 田中 佑樹, 小椋 康光, 古閑 一憲, 白谷 正治, 長野 嘉介

    日本衛生学雑誌  2022.3  (一社)日本衛生学会

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  • インジウム・スズ酸化物ナノ粒子の体内動態に及ぼすサイズ効果

    田中 昭代, 松村 渚, 田中 佑樹, 小椋 康光, 古閑 一憲, 白谷 正治, 長野 嘉介

    大気環境学会年会講演要旨集  2022.9  (公社)大気環境学会

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MISC

  • Control of selectivity in hydrogenation of CO<sub>2</sub> using plasma

    都甲将, 奥村賢直, 鎌滝晋礼, 竹中弘祐, 古閑一憲, 白谷正治, 節原裕一

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   84th   2023   ISSN:2758-4704

  • Zero-dimensional simulation for CO<sub>2</sub> methanation with plasma catalysis

    都甲将, 長谷川大樹, 奥村賢直, 鎌滝晋礼, 竹中弘祐, 古閑一憲, 白谷正治, 節原裕一

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   83rd   2022   ISSN:2758-4704

  • The role of vibrationally and rotationally excited CO molecule in CO<sub>2</sub> methanation with plasma catalysis

    都甲将, 出口雅志, 長谷川大樹, 奥村賢直, 鎌滝晋礼, 竹中弘祐, 古閑一憲, 白谷正治, 節原裕一

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   69th   2022   ISSN:2436-7613

  • 生体内動態評価のための液中プラズマによるナノ粒子生成 (小特集 プラズマが誘導する生体応答とそのバイオ・医療応用)

    古閑 一憲, 天野 孝昭, 北崎 訓, 白谷 正治, 中津 可道, 平田 美由紀, 田中 昭代

    プラズマ・核融合学会誌   2015.12

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    Nanoparticle Synthesis in Plasma in Liquid for Evaluation of Their Kinetics in Living Body

  • プラズマの直接照射及び照射溶液による突然変異の誘導

    中津 可道, 大野 みずき, 鷹野 典子, 北崎 訓, 古閑 一憲, 天野 孝昭, 白谷 正治, 田中 昭代, 續 輝久

    日本癌学会総会記事   2015.10

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    プラズマの直接照射及び照射溶液による突然変異の誘導

  • Measurement of absolute density of N atom in sputtering plasma for epitaxial growth ZnO films via nitrogen mediated crystallization Reviewed

    T. Ide, K. Matsushima, T. Takasaki, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M, Shiratani, N. Itagaki

    Proc. 68th GEC/9th ICRP/33rd SPP   2015.10

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    Measurement of absolute density of N atom in sputtering plasma for epitaxial growth ZnO films via nitrogen mediated crystallization

  • Measurements of absolute densities of nitrogen and oxygen atoms in sputtering plasma for fabrication of ZnInON films Reviewed

    K. Matsushima, T. Ide, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M, Shiratani, N. Itagaki

    Proc. 68th GEC/9th ICRP/33rd SPP   2015.10

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    Measurements of absolute densities of nitrogen and oxygen atoms in sputtering plasma for fabrication of ZnInON films

  • Measurements of nitrogen atom density in N2/Ar sputtering plasma for fabrication of high-mobility amorphous In2O3:Sn films Reviewed

    T. Takasaki, T. Ide, K. Matsushima, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M, Shiratani, N. Itagaki

    Proc. 68th GEC/9th ICRP/33rd SPP   2015.10

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    Measurements of nitrogen atom density in N2/Ar sputtering plasma for fabrication of high-mobility amorphous In2O3:Sn films

  • Raman Spectroscopy of a-C:H Films Deposited Using Ar + H2+ C7H8 Plasma CVD Reviewed

    X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    Proc. 68th GEC/9th ICRP/33rd SPP   2015.10

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    Raman Spectroscopy of a-C:H Films Deposited Using Ar + H2+ C7H8 Plasma CVD

  • 17pCP-12 アルゴンプラズマ中微粒子運動の画像解析によるプラズマパラメータ評価

    古閑 一憲, 添島 雅大, 徐 鉉雄, 板垣 奈穂, 白谷 正治, 内田 誠一

    日本物理学会講演概要集   2015.9

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    17pCP-12 Evaluation of plasma parameters using image analysis of fine particle motion in Ar plasmas

    DOI: 10.11316/jpsgaiyo.70.2.0_639

  • 反応性プラズマにおけるシリコンクラスター・ナノ粒子形成 (小特集 シリコン系太陽電池の高効率化に向けたプラズマCVDの科学) -- (気相の物理・化学)

    古閑 一憲, 白谷 正治

    プラズマ・核融合学会誌   2015.5

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    Formation of Silicon Clusters and Nanoparticles in Reactive Plasmas

  • 低圧プロセスプラズマの揺らぎとナノ粒子成長 (小特集 プラズマとナノ界面の相互作用)

    白谷 正治, 古閑 一憲

    プラズマ・核融合学会誌   2014.7

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    Fluctuation of Low Pressure Processing Plasma and Growth of Nanoparticles

  • 30aAE-11 ナノ粒子含有振幅変調放電プラズマ中のAr準安定原子密度(30aAE 非平衡極限プラズマ,領域2(プラズマ))

    白谷 正治, 古閑 一憲, 森田 康彦, 伊東 鉄平, 内田 儀一郎, 鎌滝 晋礼, 徐 鉉雄, 板垣 奈穂

    日本物理学会講演概要集   2014.3

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    30aAE-11 Nanoparticle growth in nanoparticle composite plasma system

  • 25pKC-3 ナノ粒子含有プラズマ系におけるナノ粒子成長(非平衡極限プラズマ,領域2(プラズマ基礎・プラズマ科学・核融合プラズマ・プラズマ宇宙物理))

    白谷 正治, 森田 康彦, 岩下 伸也, 古閑 一憲, 内田 儀一郎, 板垣 奈穂, Seo Hyunwoong, 鎌滝 晋礼

    日本物理学会講演概要集   2013.8

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    Nanoparticle growth in nanoparticle composite plasma system

  • Pressure dependence of carbon film deposition using H-assisted plasma CVD

    X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, K. Takenaka, Y. Setsuhara, M. Sekine, M. Hori

    Proc. 8th Int. Conf. Reactive Plasmas   2012.2

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    Pressure dependence of carbon film deposition using H-assisted plasma CVD

  • Self-organized carbon Mk formation on the top surface of fine trenches using a low temperature plasma anisotropic CVD for depositing fine organic structure

    K. Koga, T. Urakawa, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    Proc. Plasma Conf. 2011   2011.11

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    Self-organized carbon Mk formation on the top surface of fine trenches using a low temperature plasma anisotropic CVD for depositing fine organic structure

  • Effects of substrate bias voltage on plasma anisotropic CVD of carbon using H-assisted plasma CVD reactor

    T. Urakawa, H. Matsuzaki, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    Proc. Intern. Symp. on Dry Process   2011.11

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    Effects of substrate bias voltage on plasma anisotropic CVD of carbon using H-assisted plasma CVD reactor

  • Optical emission spectroscopy of Ar+H2+ C7H8 discharges for anisotropic plasma CVD of carbon

    T. Urakawa, H. Matsuzaki, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    Proc. Intern. Symp. on Dry Process   2011.11

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    Optical emission spectroscopy of Ar+H2+ C7H8 discharges for anisotropic plasma CVD of carbon

  • プロセスプラズマ中の微粒子の凝集と輸送

    古閑 一憲, 内田 儀一郎, 白谷 正治, 布村 正太, 渡辺 征夫

    プラズマ・核融合学会誌 = Journal of plasma and fusion research   2011.2

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    Coagulation and Transport of Fine Particles in Processing Plasmas

  • 光劣化しない革新的アモルファスシリコン太陽電池の作製をめざして

    白谷 正治, 古閑 一憲

    プラズマ・核融合学会誌 = Journal of plasma and fusion research   2010.1

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    Towards Revolutionary Amorphous Silicon Solar Cells without Light Induced Degradation

  • 高品質光安定a-Si:H薄膜作製用マルチホロー放電における電子密度の空間分布

    古閑 一憲, 佐藤 宙, 川嶋 勇毅, 中村 誠ウィリアム, 白谷 正治

    電気学会研究会資料. PST, プラズマ研究会   2009.6

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    Spatial profiles of electron density in multi-hollow discharges for depositing highly stable a-Si:H thin films of high quality

  • 28aSP-11 無対流ガス空間中炭素クラスターの凝集過程測定(ミー散乱)(28aSP プラズマ宇宙物理(コンプレックスプラズマ),領域2(プラズマ基礎・プラズマ科学・核融合プラズマ・プラズマ宇宙物理))

    三重野 哲, 譚 国棟, 薄葉 州, 古閑 一憲, 白谷 正治

    日本物理学会講演概要集   2009.3

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    28aSP-11 Measurement of cohesion process of carbon clusters in convection-free hot-gas phase (Mie-scattering measurement)

  • クラスター制御プラズマCVDによるa-Si:H薄膜堆積

    白谷 正治, 古閑 一憲

    應用物理   2008.2

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    Deposition of a-Si:H films using cluster-controlled plasma CVD

  • 新しいナノ構造形成技術:プラズマ異方性CDV (特集 新しいナノテクノロジーの展望)

    白谷 正治, 古閑 一憲

    ケミカルエンジニヤリング   2006.12

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  • 反応性プラズマを用いたナノ粒子の気相合成とナノ粒子含有膜堆積への応用

    白谷 正治, 古閑 一憲

    應用物理   2006.4

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    Synthesis of nanoparticles using reactive plasmas and its application to deposition of nanoparticle composite films

  • Dust Formation due to Interaction between H2 Plasma and Carbon Wall

    Kazunori Koga, Ryuji Uehara, Masaharu Shiratani, Yukio Watanabe, Akio Komori

    IEEE International Conference on Plasma Science   2003.10

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    Dust Formation due to Interaction between H2 Plasma and Carbon Wall
    The dust formation due to interaction between hydrogen plasma and carbon walls was discussed. Carbon fiber composites of 35 mm in diameter were placed at 285 mm from the center of the quartz window to simulate the divertor wall. It was found that all emission intensities and sputtering rates decrease with the increase in kinetic energy of the ions impinging on the target.

  • シランプラズマ中のクラスタ成長と薄膜形成

    白谷 正治, 古閑 一憲, 尾形 隆則, 掛谷 知秀, 鹿口 直斗, 渡辺 征夫

    電子情報通信学会技術研究報告. OME, 有機エレクトロニクス   2003.4

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    Growth of Clusters in Silane Plasmas and Their Relation to Deposition of Thin Films
    Cluster amount in silane plasmas employed for a-Si:H deposition can be reduced significantly by increasing discharging frequency or by diluting with H_2 gas. Reduction of cluster amount brings about the decrease in a microstructure parameter of a-Si:H films, leading to the increase in a high fill factor.

  • Anisotropic deposition of copper by H-assisted plasma chemical vapor deposition

    K Takenaka, M Shiratani, M Onishi, M Takeshita, T Kinoshita, K Koga, Y Watanabe

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   2002.4

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    in order to fill small via-holes and trenches for ultralarge scale integration (ULSI) interconnects, we propose an anisotropic chemical vapor deposition (CVD) method by which Cu is deposited at a high rate at the bottom of a trench compared to that at its side wall. The ion irradiation is the key to realize the anisotropic CVD. The anisotropy, which is a ratio of deposition rate at the bottom of a trench to that at its side wall, tends to increase with energy as well as flux of ions (H-3(+) is the predominant ion) impinging on the substrate surface, while it does not depend on H flux. We demonstrate promising anisotropic filling of trenches by the anisotropic CVD method. (C) 2003 Elsevier Science Ltd. All rights reserved.

    DOI: 10.1016/S1369-8001(02)00108-7

  • Cluster-less plasma CVD reactor and its application to a-Si:H film deposition

    Masaharu Shiratani, Kazunori Koga, Yukio Watanabe

    Materials Research Society Symposium - Proceedings   2001.12

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    Cluster-less plasma CVD reactor and its application to a-Si:H film deposition
    Even under the conventional device-quality discharge conditions, large amount of clusters are found to exist in silane radio frequency (RF) discharges. The size and density of clusters near the substrate on the grounded electrode are 2 nm and 1011cm-3, respectively. In order to prevent such clusters from depositing on hydrogenated amorphous silicon (a-Si:H) films, we have developed a cluster-less plasma CVD reactor which can significantly suppress cluster amount by using gas viscous and thermophoretic forces exerted on clusters, and by reducing gas stagnation region. Using the reactor, we have demonstrated deposition of ultra high quality a-Si:H films which have a significantly less concentration of Si-H2bonds compared to conventional device-quality films.

  • Methods of suppressing cluster growth in silane RF discharges

    M. Shiratani, S. Maeda, Y. Matsuoka, K. Tanaka, K. Koga, Y. Watanabe

    Materials Research Society Symposium - Proceedings   2000.12

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    Methods of suppressing cluster growth in silane RF discharges
    The effects of gas temperature gradient, pulse discharge modulation, hydrogen dilution, gas flow, and substrate materials on growth of clusters below about 10 nm in size in silane parallel-plate RF discharges are studied using a high-sensitivity photon-counting laser-light-scattering (PCLLS) method. Thermophoretic force due to the gas temperature gradient between the electrodes drives neutral clusters above a few nm in size toward the cool RF electrode. Pulse discharge modulation is much more effective in reducing the cluster density when it is combined with the gas temperature gradient, and clusters above a few nm in size cannot be detected by the PCLLS method even for the discharge over a few hours. Hydrogen dilution and gas flow are also effective in suppressing growth of clusters, when the H2/SiH4concentration ratio is above about 5 and the flow velocity is above about 6 cm/s, respectively. Cluster growth rate with a glass or Si substrate is found to be considerably higher than that without the substrate.

  • Deposition of smooth thin Cu films in deep submicron trench by plasma CVD reactor with H atom source

    M. Shiratani, Hong Jie Jin, Y. Nakatake, K. Koga, T. Kinoshita, Y. Watanabe

    Materials Research Society Symposium - Proceedings   2000.12

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    Deposition of smooth thin Cu films in deep submicron trench by plasma CVD reactor with H atom source
    Effects of H irradiation on purifying Cu films and improving their surface roughness as well as size and orientation of Cu grains in the films have been examined using a newly developed plasma CVD reactor equipped with an H atom source, in which Cu(hfac)2is supplied as the source material. The H irradiation is effective in purifying the Cu films, increasing the grain size, and reducing the surface roughness, while it has no effect on the grain orientation. The decrease in dissociation degree of material gas leads to reduction of the surface reaction probability of Cu-containing radicals, which is important to realize conformal deposition in fine trenches. Using the control of dissociation degree of material gas independent of H irradiation, we have demonstrated conformal deposition of smooth Cu films in the trench using the developed plasma CVD reactor.

  • H assisted control of quality and conformality in Cu film deposition using plasma CVD method

    Masaharu Shiratani, Hong Jie Jin, Kosuke Takenaka, Kazunori Koga, Toshio Kinoshita, Yukio Watanabe

    Advanced Metallization Conference (AMC)   2000.12

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    H assisted control of quality and conformality in Cu film deposition using plasma CVD method
    Hydrogen assisted plasma CVD (HAPCVD), in which Cu(hfac)2 is supplied as the source material, realizes control of quality and conformality in Cu fill deposition, since H irradiation is effective in purifying the Cu films, increasing the grain size, and reducing the surface roughness, while decrease in dissociation degree of Cu(hfac)2 leads to realize conformal deposition in fine trenches. Cu(hfac) is identified as the radical mainly contributing to the deposition. Based on the results, we propose a model in which Cu(hfac) and H react on surfaces to deposit Cu films. We also have demonstrated conformal deposition of smooth Cu films of 30 nm in thickness and 1.9 μΩcm in resistivity in trenches using the HAPCVD.

  • Filling subquarter-micron trench structure with high-purity copper using plasma reactor with H atom source

    Hong Jie Jin, Masaharu Shiratani, Yasuhiro Nakatake, Kazunori Koga, Toshio Kinoshita, Yukio Watanabe

    Research Reports on Information Science and Electrical Engineering of Kyushu University   2000.3

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    Filling subquarter-micron trench structure with high-purity copper using plasma reactor with H atom source
    A plasma chemical vapor deposition reactor with an additional source of H atoms, in which concentrations of both H atoms and Cu-containing radicals are controllable independently, is developed to fill fine patterns for interconnects with high-purity Cu. Cu-filling property in trench structure with the reactor is evaluated under deposition conditions of high-purity (≈100&#37;) Cu films. The surface reaction probability β of Cu-containing radicals is deduced from the coverage shape of Cu deposition in the trench structure and its Monte Carlo simulation. With decreasing the main discharge power Pm, the β value decreases from 0.2 for Pm = 35 W to 0.01 for Pm = 3 W. Using this reactor, we have realized filling of high purity Cu in a trench 0.3 μm wide and 0.9 μm deep.

    DOI: 10.15017/1513729

  • Behavior of the ion sheath instability in a negative ion plasma

    Kazunori Koga, Yoshinobu Kawai

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   1999.12

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    Behavior of the ion sheath instability in a negative ion plasma
    The ion sheath instability with half the ion plasma frequency was observed around the separation grid in a double plasma containing negative ions, where the dominant negative ion species was specified from the dispersion relation of the ion acoustic wave. Detailed behavior of ion sheath instability was examined as a function of concentration of negative ions and bias potential of the separation grid. By measuring the sheath structure formed around the separation grid, it was found that when the negative ion density was increased, the ion sheath instability was suppressed. Furthermore, the peak frequency decreased with an increasing concentration of negative ions. ©1999 Publication Board, Japanese Journal of Applied Physics.

    DOI: 10.1143/JJAP.38.1553

  • Behavior of the ion sheath instability in a negative ion plasma

    K Koga, Y Kawai

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   1999.3

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    The ion sheath instability with half the ion plasma frequency was observed around the separation grid in a double plasma containing negative ions, where the dominant negative ion species was specified from the dispersion relation of the ion acoustic wave. Detailed behavior of ion sheath instability was examined as a function of concentration of negative ions and bias potential of the separation grid. By measuring the sheath structure formed around the separation grid? it was found that when the negative ion density was increased, the ion sheath instability was suppressed. Furthermore, the peak frequency decreased with an increasing concentration of negative ions.

    DOI: 10.1143/JJAP.38.1553

  • 負イオンプラズマにおける非対称イオンシース構造

    古閑 一憲, 河合 良信, 内藤 裕志

    電気学会研究会資料. EP, プラズマ研究会   1998.11

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    Asymmetric Ion Sheath Structure in Negative Ion Plasma

  • 27p-C-4 イオンシース不安定性におけるシース構造(II)

    古閑 一憲, 内藤 浩志, 河合 良信

    日本物理学会講演概要集   1998.9

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    The sheath structure in the ion sheath instability (II)

  • 27p-C-1 負イオンプラズマ中の擬似波 II

    饒辺 幹, 吉村 信次, 古閑 一憲, 河合 良信

    日本物理学会講演概要集   1998.9

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    Paeudowaves in a Negative Ion Plasma II

  • 7a-YN-7 イオンシース不安定性におけるシース構造

    古閑 一憲, 河合 良信

    日本物理学会講演概要集   1997.9

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    7a-YN-7 The sheath structure in the ion sheath instability.

  • 29a-YG-9 負イオンを含む多成分プラズマにおけるイオンシース不安定性(II)

    古閑 一憲, 林 信哉, 河合 良信

    日本物理学会講演概要集   1997.3

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    29a-YG-9 Ion Sheath Instability in Multi-Component Plasmas with Negative Ions(II)

  • 29a-YG-10 イオン波の分散特性に対する負イオンの効果

    吉村 信次, 古閑 一憲, 中村 良治, 渡辺 二太, 河合 良信

    日本物理学会講演概要集   1997.3

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    29a-YG-10 Effects of negative ions on dispersion characteristics of ion waves

  • 1p-YM-3 負イオンを含む多成分プラズマにおけるイオンシース不安定性(プラズマ物理・核融合(プラズマ基礎))

    古閑 一憲, 林 信哉, 河合 良信

    日本物理学会講演概要集. 年会   1996.3

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    1p-YM-3 Ion Sheath Instability in Multi-Component Plasmas with Negative Ions

  • 28a-Q-11 負イオンを含む多成分プラズマのイオンシース中の現象

    古閑 一憲, 林 信哉, 和田 哲行, 篠原 俊二郎, 河合 良信

    日本物理学会講演概要集. 秋の分科会   1995.9

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    28a-Q-11 Phenomena in an Ion Sheath in Multi-Component Plasmas with Negative Ions

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Works

  • 集積回路内銅配線形成に関する共同研究

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Industrial property rights

Patent   Number of applications: 12   Number of registrations: 4
Utility model   Number of applications: 0   Number of registrations: 0
Design   Number of applications: 0   Number of registrations: 0
Trademark   Number of applications: 0   Number of registrations: 0

Professional Memberships

  • 応用物理学会プラズマエレクトロニクス分科会

  • 電気学会

  • プラズマ・核融合学会

  • Materials Research Society

  • American Vaccum Society

  • 日本生化学会

  • 応用物理学会

  • American Vacuum Society

  • ブラズマ・核融合学会

  • 日本物理学会

  • 応用物理学会プラズマエレクトロニクス分科会

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  • 応用物理学会

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  • ブラズマ・核融合学会

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  • Materials Research Society

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  • American Vacuum Society

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  • American Vaccum Society

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  • 日本物理学会

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  • 電気学会

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  • 日本生化学会

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  • プラズマ・核融合学会

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Committee Memberships

  • プラズマ・核融合学会   Executive   Domestic

    2024.6 - 2028.5   

  • DryProcessSymposium2023   出版委員長   Foreign country

    2023.1 - 2023.12   

  • プラズマ・核融合学会 九州・山口・沖縄支部   支部長   Domestic

    2022.6 - 2024.5   

  • 応用物理学会   論文賞委員   Domestic

    2022.4 - 2024.3   

  • DryProcessSymposium2022   副出版委員長   Foreign country

    2022.1 - 2022.12   

  • DryProcessSymposium2022   論文委員   Foreign country

    2022.1 - 2022.12   

  • Program Committee   Program Committee   Foreign country

    2020.4 - 2021.3   

  • Program Committee   Program Committee   Foreign country

    2020.4 - 2021.3   

  • 論文委員   論文委員   Foreign country

    2020.1 - 2020.12   

  • Program Committee   Program Committee   Foreign country

    2019.1 - 2020.12   

  • Session Chair B2   Session Chair B2   Foreign country

    2019.1 - 2020.12   

  • 論文委員   論文委員   Foreign country

    2019.1 - 2019.12   

  • 副幹事長   副幹事長   Domestic

    2018.4 - 2022.3   

  • 応用物理学会 プラズマ・エレクトロニクス分科会   副幹事長  

    2018.4 - 2022.3   

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  • 論文委員   論文委員   Foreign country

    2018.1 - 2018.12   

  • プログラム編集委員   プログラム編集委員   Domestic

    2017.4 - 2021.3   

  • 論文委員   論文委員   Foreign country

    2017.4 - 2018.3   

  • 代議員   代議員   Domestic

    2017.2 - 2019.1   

  • Treasurer   Treasurer   Foreign country

    2017.1 - 2018.12   

  • Program Committee   Program Committee   Foreign country

    2016.4 - 2021.3   

  • 委員   委員   Domestic

    2016.4 - 2018.12   

  • Organizing Committee   Organizing Committee   Foreign country

    2016.4 - 2017.3   

  • 論文委員   論文委員   Foreign country

    2016.4 - 2017.3   

  • Programme committee member   Programme committee member   Foreign country

    2015.6 - 2016.6   

  • 幹事   Organizer   Domestic

    2013.4 - 2015.3   

  • 「プラズマ理工学と医学・農学の融合科学」専門委員   「プラズマ理工学と医学・農学の融合科学」専門委員   Domestic

    2013.4 - 2015.3   

  • 幹事   Organizer   Domestic

    2006.4 - 2008.3   

  • 学会誌モニター   学会誌モニター   Domestic

    2003.4 - 2005.3   

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Academic Activities

  • Japanese Journal of Applied Physics DPS2022 Special Issue International contribution

    2022.4 - 2023.3

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    2017年第64回応用物理学会春季学術講演会(パシフィコ横浜)  ( Japan ) 2017.3

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  • Screening of academic papers

    Role(s): Peer review

    2017

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    Type:Peer review 

    Number of peer-reviewed articles in foreign language journals:4

    Number of peer-reviewed articles in Japanese journals:0

    Proceedings of International Conference Number of peer-reviewed papers:0

    Proceedings of domestic conference Number of peer-reviewed papers:0

  • プラズマ・核融合学会誌

    2016.7 - 2018.7

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    Type:Academic society, research group, etc. 

  • Other International contribution

    37th International Dymposium on Dry Process (DPS2015)  ( Awaji Island Japan Japan ) 2015.11

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    Type:Competition, symposium, etc. 

    Number of participants:150

  • Other International contribution

    9th International Conference on Reactive Plasmas/68th Gaseous Electronics Conference/33rd Symposium on Plasma Processing  ( Hawaii Convention Center UnitedStatesofAmerica UnitedStatesofAmerica ) 2015.10

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    Type:Competition, symposium, etc. 

    Number of participants:1,000

  • Other International contribution

    9th International Conference on Reactive Plasmas/68th Gaseous Electronics Conference/33rd Symposium on Plasma Processing  ( Hawaii Convention Center UnitedStatesofAmerica UnitedStatesofAmerica ) 2015.10

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    Type:Competition, symposium, etc. 

    Number of participants:1,000

  • Japanese Journal of Applied Physics ISPlasma2016 Special Issue International contribution

    2015.4 - 2017.3

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    Type:Academic society, research group, etc. 

  • Surface Coatings & Techonol AEPSE2015 Special Issue International contribution

    2015.4 - 2017.3

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  • その他

    2015年第62回応用物理学会春季学術講演会(東海大)  ( Japan ) 2015.3

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  • Other International contribution

    36th International Dymposium on Dry Process (DPS2014)  ( PACIFICO Convention Plaza Japan Japan ) 2014.11

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    Type:Competition, symposium, etc. 

    Number of participants:150

  • Other International contribution

    26th Symposium on Plasma Physics and Technology  ( Prague CzechRepublic CzechRepublic ) 2014.6

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    Type:Competition, symposium, etc. 

    Number of participants:100

  • その他 International contribution

    The 8th International Conference on Reactive Plasmas and 31st Symposium on Plasma Processing  ( Japan ) 2014.2

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    Type:Competition, symposium, etc. 

    Number of participants:600

  • その他

    プラズマ・核融合学会 九州・沖縄・山口支部第17回支部大会  ( Japan ) 2013.12

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  • その他 International contribution

    The 6th International Conference on Plasma Nanotechnology and Science (IC-PLANTS 2013)  ( Japan ) 2013.2

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  • その他

    プラズマ核融合学会 第29回年会  ( Japan ) 2012.11

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  • Other International contribution

    IEEE TENCON2010  ( Fukuoka Japan Japan ) 2010.11

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    Type:Competition, symposium, etc. 

  • 座長(Chairmanship)

    2010年春季第57回応用物理学関係連合講演会(東海大)  ( Japan ) 2010.3 - 2008.3

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  • その他

    応用物理学会九州支部学術講演会講演会  ( Japan ) 2009.11

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    Type:Competition, symposium, etc. 

  • その他

    第70回応用物理学会学術講演会  ( Japan ) 2009.9

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  • Journal of Plasma and Fusion Research Series International contribution

    2008.9 - 2009.9

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    Type:Academic society, research group, etc. 

  • その他

    フロンティアプロセス2008  ( Japan ) 2008.8

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    Type:Competition, symposium, etc. 

  • その他

    2008年春季第55回応用物理学関係連合講演会  ( Japan ) 2008.3

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  • その他 International contribution

    プラズマ表面工学に関するアジア-ヨーロッパ国際会議(AEPSE2007)  ( Japan ) 2007.9 - 2008.3

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  • Other International contribution

    The 5th International Symposium on Advanced Plasma Processes and Diagnostics & The 1st International Symposium on Flexible Electronics Technology  ( Sungkyunkwan University(SKKU), Suwon Korea Korea ) 2007.4 - 2008.3

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  • その他

    第33回アモルファスセミナー スタートアップセッション  ( Japan ) 2006.11 - 2007.3

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  • その他

    第33回アモルファスセミナー  ( Japan ) 2006.11 - 2007.3

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  • その他

    応用物理学会2005年秋季講演会  ( Japan ) 2005.9

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Research Projects

  • Plasma-driven Seed Memory Operation: Frontiers in Molecular Dynamics in Seeds driven by Plasma

    Grant number:24A206  2024.4 - 2029.3

    Grants-in-Aid for Scientific Research  Grant-in-Aid for Transformative Research Areas (A)

    古閑 一憲

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    Grant type:Scientific research funding

    CiNii Research

  • Integration Study of General Principles of Thin Film Formation by Plasma Processes.

    Grant number:24H00205  2024.4 - 2029.3

    Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (A)

    白谷 正治, 布村 正太, 鎌滝 晋礼, 古閑 一憲

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    Grant type:Scientific research funding

    長年、成膜プロセスは、所望の膜質を実現する外部パラメータを実験的に探索する手法にとらわれているのが現状である。それは、成膜プロセスから膜質を理論的に同定する方法論が確立されていないためである。そこで、本研究は、プラズマ内部パラメータと膜質の定量的関係の一般則を導出することを目的としている。そこで、本研究では、① 電子密度やイオンエネルギーなどのプラズマ内部パラメータを発光情報から導出する定量的法則を見出すこと、②膜質のin-situ計測と大量データ収集システムを構築し、③ 外部パラメータ×プラズマ内部パラメータ×膜質の総合的な定量的な関係則を見出し、プラズマプロセス膜形成の一般則を導出する。

    CiNii Research

  • Comprehensive study of plasma-driven molecular dynamics in seeds

    Grant number:24H02246  2024.4 - 2029.3

    Grants-in-Aid for Scientific Research  Grant-in-Aid for Transformative Research Areas (A)

    古閑 一憲, 金子 俊郎, 小野 亮, 杤久保 文嘉, 伊藤 篤史, 國枝 正, 魚住 信之, 石川 健治, 石橋 勇志, 江原 宏, 新田 洋司, 村上 朝之, 谷口 和成, 栂根 一夫

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    Grant type:Scientific research funding

    プラズマは、環境負荷の少ない植物成長促進法として注目を集めている。中でも種子へのプラズマ照射は、低コストな成長促進だけでなく、DNA修飾変動などを示す。種子へのプラズマ照射からDNA修飾変動に至る分子機構解明のためには、プラズマから種子内細胞までの分子機構がプラズマによりどのように変動を受けるのかを統合した学理の構築が必要である。本総括研究では、5年間の研究期間において、プラズマ科学と種子科学を中心に、様々な分野における研究者が一同に会して議論しプラズマ種子科学領域を創成する。

    CiNii Research

  • Plasma-driven transport of reactive species from gas phase to seeds

    Grant number:24H02250  2024.4 - 2029.3

    Grants-in-Aid for Scientific Research  Grant-in-Aid for Transformative Research Areas (A)

    古閑 一憲, 神野 雅文, 朽津 和幸, 吉田 朋子, 谷口 和成

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    Grant type:Scientific research funding

    プラズマは、環境負荷の少ない植物成長促進法として注目を集めている。中でも種子へのプラズマ照射は、低コストな成長促進法としてだけでなく、DNA修飾変動などを示す。種子へのプラズマ照射効果を明らかにする上で、プラズマから種子にどのような分子がどれほど輸送されたのかを明らかにすることは、必須の検討事項である。本計画研究では、5年間の研究期間において、プラズマから種子、植物細胞への分子輸送機構を明らかにして、輸送制御を実現するために基礎学理を構築する。

    CiNii Research

  • 持続可能な農業生産性向上を実現するプラズマアグリサイエンス拠点

    2023 - 2024

    JST COI-NEXT 共創分野 育成型

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    Authorship:Coinvestigator(s)  Grant type:Contract research

  • Plasma-modified peptides/proteins for multi-target anticancer treatment

    Grant number:23K22483  2022.4 - 2027.3

    Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (B)

    Attri Pankaj, 田中 宏昌, 栗田 弘史, 竹内 希, 白谷 正治, 古閑 一憲

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    Grant type:Scientific research funding

    Modified the amino acids through plasma and understood the structure changes in proteins and peptides in the absence and presence of co-solvents. Additionally, to understand the effect of plasma-modified protein action on cancer cells, we will bind the protein with drugs and inhibit their action.

    CiNii Research

  • Plasma-modified peptides/proteins for multi-target anticancer treatment

    Grant number:22H01212  2022 - 2026

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (C)

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    Grant type:Scientific research funding

  • Plasma-modified peptides/proteins for multi-target anticancer treatment

    Grant number:22H01212  2022 - 2026

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (B)

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    Authorship:Coinvestigator(s)  Grant type:Scientific research funding

  • プラズマ生成フリーラジカル非平衡反応場の液相時空間解析

    Grant number:21H04451  2021 - 2023

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (C)

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    Grant type:Scientific research funding

  • プラズマ生成フリーラジカル非平衡反応場の液相時空間解析

    Grant number:21H04451  2021 - 2023

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (A)

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    Authorship:Coinvestigator(s)  Grant type:Scientific research funding

  • Molecular Mechanism of recognition of external information in seeds against low temperature plasma irradiation

    Grant number:20H01893  2020 - 2022

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (B)

    Koga Kazunori

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    Authorship:Principal investigator  Grant type:Scientific research funding

    In this study, we aimed to clarify "what is the optimum physiological state of seeds for plasma irradiation". We found that the sensitivity of seeds to plasma irradiation changes depending on seed aging and seed coat color. The effect of plasma irradiation changes depending on the state of seeds even under the same irradiation conditions. The study also revealed that plasma irradiation can alter DNA modifications in seeds. The response to plasma irradiation differs depending on the dormancy state of seeds. For our developed scalable dielectric barrier discharge plasma, its growth-promoting effect was greater when seeds were in a deeper dormancy state.

    CiNii Research

  • 環境に優しい作物収量増加を目指した窒素・炭素肥料作製用その場プラズマシステム開発

    2020 - 2022

    JST A-STEP 育成型

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    Authorship:Principal investigator  Grant type:Contract research

  • Development of "super-bio-functions" by plasma-activated biological substances

    Grant number:19H05462  2019 - 2023

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Specially Promoted Research

    堀 勝, 梶山 広明, 伊藤 昌文, 片岡 洋祐, 白谷 正治, 豊國 伸哉, 榊原 均, 松本 省吾, 古閑 一憲, 吉川 史隆

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    Authorship:Coinvestigator(s)  Grant type:Scientific research funding

    プラズマによって誘起された生体活性物質の分子構造と物性を突き止め、各物質と生体との相互作用を解明することによって、超バイオ機能発現の本質を明らかにする。また、活性物質による細胞死、増殖、分化などの真核生物に普遍的な現象の分子機構を解明する。その成果を基盤にして、プラズマ医療、農業という未来産業を拓く羅針盤となる、学術基盤『プラズマ生命科学』を切り拓き、地球規模の課題である、難病治療や食糧不足などを解決するイノベーションを産み出す。

    CiNii Research

  • 組成制御低温プラズマを用いた種子処理に対する発芽初期段階のストレス応答

    2019 - 2020

    Japan Society for the Promotion of Science  Bilateral program

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    Authorship:Principal investigator  Grant type:Joint research

  • 精密制御プラズマ・触媒反応場の創成

    Grant number:18K18754  2018 - 2019

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Challenging Research(Exploratory)

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    Authorship:Principal investigator  Grant type:Scientific research funding

  • 穀物増産を実現する種子へのプラズマ大量処理技術開発

    2017 - 2018

    JAXA宇宙探査イノベーションハブ

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    Authorship:Principal investigator  Grant type:Contract research

  • 電場を用いた帯電ダストと製膜前駆体イオンの除去

    2017

    NIFS 一般共同研究

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    Authorship:Principal investigator  Grant type:Contract research

  • プラズマ照射による植物成長促進の世代間伝搬機構の解明

    Grant number:16H03895  2016 - 2019

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (B)

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    Authorship:Principal investigator  Grant type:Scientific research funding

  • インジウムナノ粒子の体内吸収と毒性メカニズム

    Grant number:16H05257  2016 - 2018

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (B)

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    Authorship:Coinvestigator(s)  Grant type:Scientific research funding

  • プラズマ・触媒ナノ粒子複合反応場によるCO2資源化技術の開発 (代表者:白谷正治)

    2015 - 2016

    JAXA宇宙探査イノベーションハブ

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    Authorship:Coinvestigator(s)  Grant type:Contract research

  • プラズマを用いたナノ粒子精密配置制御の学術基盤創成

    Grant number:26246036  2014 - 2018

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (A)

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    Authorship:Coinvestigator(s)  Grant type:Scientific research funding

  • 液中プラズマを用いたミクロンサイズの穴への銅ナノ粒子埋め込みプロセスの創成

    Grant number:25600126  2013 - 2015

    Grants-in-Aid for Scientific Research  Grant-in-Aid for challenging Exploratory Research

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    Authorship:Principal investigator  Grant type:Scientific research funding

  • プラズマ・ナノマテリアル動態学の創成と安全安心医療科学の構築

    Grant number:24108009  2012 - 2016

    Japan Society for the Promotion of Science・Ministry of Education, Culture, Sports, Science and Technology  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research on Innovative Areas

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    Authorship:Coinvestigator(s)  Grant type:Scientific research funding

  • コンビナトリアル細胞活性解析を用いた細胞超活性プラズマの創成

    Grant number:24340143  2012 - 2015

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (B)

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    Authorship:Principal investigator  Grant type:Scientific research funding

  • 職業性吸入インジウムの体内動態と多臓器障害に関する研究

    Grant number:23390164  2011 - 2013

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (C)

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    Grant type:Scientific research funding

  • ナノ粒子制御によるアモルファスシリコンセルの高光安定化に関する研究 超高周波プラズマ源の開発 (代表者:白谷正治)

    2010 - 2014

    NEDO太陽光発電システム次世代高性能技術の開発

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    Authorship:Coinvestigator(s)  Grant type:Contract research

  • 細胞周期同期パルスプラズマ照射による細胞増殖加速

    Grant number:22656022  2010 - 2011

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (C)

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    Grant type:Scientific research funding

  • 大学院システム情報科学研究院研究資金 部門名(情報エレクトロニクス部門古閑一憲助教)

    2010

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    Grant type:Donation

  • 電場を用いたダスト収集

    2010

    平成22年度九州大学宙空環境研究センター「共同研究」

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    Authorship:Principal investigator  Grant type:On-campus funds, funds, etc.

  • ナノ粒子含有プラズマによるナノ界面ボンドエンジニアリングの創生(代表者:白谷正治)

    Grant number:21110005  2009 - 2013

    Japan Society for the Promotion of Science・Ministry of Education, Culture, Sports, Science and Technology  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research on Innovative Areas

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    Authorship:Coinvestigator(s)  Grant type:Scientific research funding

  • プラズマとナノ界面の相互作用に関する総括研究(代表者:白谷正治)

    Grant number:21110001  2009 - 2013

    Japan Society for the Promotion of Science・Ministry of Education, Culture, Sports, Science and Technology  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research on Innovative Areas

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    Authorship:Collaborating Investigator(s) (not designated on Grant-in-Aid)  Grant type:Scientific research funding

  • 電位構造制御によるダストフラックス計測

    2009

    平成21年度九州大学宙空環境研究センター「共同研究」

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    Authorship:Principal investigator  Grant type:On-campus funds, funds, etc.

  • プラズマを用いた次世代LSI用低誘電率層間絶縁膜の作製

    2008.3 - 2012.3

    Joint research

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    Authorship:Coinvestigator(s)  Grant type:Other funds from industry-academia collaboration

  • 高度秩序構造を有する薄膜多接合太陽電池の研究開発(ナノ結晶シリコン)(代表者:白谷正治)

    2008 - 2014

    NEDO 革新的太陽光発電技術研究開発(革新型太陽電池国際研究拠点整備事業)

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    Authorship:Coinvestigator(s)  Grant type:Contract research

  • ナノブロック輸送・配置の学術・技術基盤構築(代表者:白谷正治)

    Grant number:20360040  2008 - 2010

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (B)

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    Authorship:Coinvestigator(s)  Grant type:Scientific research funding

  • プラズマ中ダストの能動的輸送制御

    2008

    平成20年度九州大学宙空環境研究センター「共同研究」

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    Authorship:Principal investigator  Grant type:On-campus funds, funds, etc.

  • CREST 研究領域「ナノ科学を基盤とした革新的製造技術の創成」 プラズマナノ科学創成によるプロセスナビゲーション構築とソフト材料加工(代表者:堀 勝)

    2007 - 2011

    JST Strategic Basic Research Program (Ministry of Education, Culture, Sports, Science and Technology)

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    Authorship:Coinvestigator(s)  Grant type:Contract research

  • インジウム新素材によるインジウム肺発症の実験的研究(代表者:田中昭代)

    Grant number:19390164  2007 - 2009

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (B)

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    Authorship:Coinvestigator(s)  Grant type:Scientific research funding

  • 大面積/高効率多接合薄膜シリコン太陽電池の高生産製膜技術開発(代表者:白谷正治)

    2007 - 2009

    太陽光発電システム未来技術研究開発

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    Authorship:Coinvestigator(s)  Grant type:Contract research

  • 重水素プラズマ・カーボン壁相互作用によるナノダストの生成と重水素吸蔵量の評価

    Grant number:18740353  2006 - 2007

    Grants-in-Aid for Scientific Research  Grant-in-Aid for Young Scientists (B)

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    Authorship:Principal investigator  Grant type:Scientific research funding

  • プラズマを用いたナノカプセルの創製と物質内包技術の開発(代表者:白谷正治)

    Grant number:18656027  2006 - 2007

    Grants-in-Aid for Scientific Research  Grant-in-Aid for Exploratory Research

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    Authorship:Coinvestigator(s)  Grant type:Scientific research funding

  • トップセルの光劣化の基礎現象解明

    2006 - 2007

    NEDO再受託

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    Authorship:Coinvestigator(s)  Grant type:Contract research

  • 低コスト高効率太陽電池のための高光安定水素化アモルファスシリコンの大面積・高速作製技術の開発

    2005 - 2007

    NEDO 平成17年度第2回産業技術研究助成事業

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    Authorship:Principal investigator  Grant type:Contract research

  • ナノ構造の新作製法としてのプラズマ異方性CVD

    Grant number:16360020  2004 - 2006

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (C)

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    Grant type:Scientific research funding

  • 水素プラズマ・カーボン壁相互作用によるナノ粒子成長機構の研究

    Grant number:16740316  2004 - 2005

    Grants-in-Aid for Scientific Research  Grant-in-Aid for Young Scientists (B)

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    Authorship:Principal investigator  Grant type:Scientific research funding

  • 微重力反応性プラズマ中の微粒子成長

    Grant number:15654082  2003 - 2004

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (C)

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    Grant type:Scientific research funding

  • 超高効率太陽電池のためのクラスタ反応制御プラズマCVD

    Grant number:14205047  2002 - 2004

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (C)

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    Grant type:Scientific research funding

  • プラズマ・カーボン壁相互作用による微粒子形成機構の研究

    Grant number:14780385  2002 - 2003

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (C)

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    Grant type:Scientific research funding

  • LSI内微細銅配線のためのプラズマ異方性CVD

    Grant number:14350021  2002 - 2003

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (C)

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    Grant type:Scientific research funding

  • 革新的次世代太陽光発電システム技術研究開発

    2000.6 - 2001.3

    産業技術総合研究所,九州大学,凸版印刷,スタンレー電気,日本板硝子 

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    Authorship:Coinvestigator(s) 

    本研究は,九州大学,産業技術総合研究所,凸版印刷,スタンレー電気,日本板硝子が共同で行うものであり,全体としては,薄膜シリコン系スタック型太陽電池において、従来トップセル材料として用いられてきたアモルファスシリコンが持つ光劣化の問題を根本的に解決する革新的材料、ナノ構造制御シリコンを開発し、それを用いた低コスト高効率太陽電池製造技術を確立し、モジュールコストを50円/W以下を可能とする指針を得ることを目的としている.
     九州大学の分担内容は,九州大学プラズマ研究室で開発したSi微粒子成長制御法と微粒子観測技術をもとに,上述のナノ構造制御シリコン太陽電池を作製する際に必要となるナノ構造制御シリコン材料の開発を行うことを目的としている.

  • 負性プラズマとそのシース中での微粒子挙動に関する研究

    Grant number:12780357  2000 - 2001

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (C)

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    Grant type:Scientific research funding

  • シランプラズマ中のSiクラスタの成長機構に関する研究

    Grant number:11450037  1999 - 2000

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (C)

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    Grant type:Scientific research funding

▼display all

Educational Activities

  • 学部教育担当科目
     電気情報数学
     数学演習II
     アカデミックフロンティア
    大学院教育担当科目
     ナノプロセス工学特論

Class subject

  • ナノプロセス工学特論Ⅱ

    2024.6 - 2024.8   Summer quarter

  • 電気情報数学Ⅱ(EC)

    2024.6 - 2024.8   Summer quarter

  • 電気電子工学演示Ⅰ

    2024.4 - 2024.9   First semester

  • 電気情報数学(B)

    2024.4 - 2024.9   First semester

  • 数学演習B

    2024.4 - 2024.9   First semester

  • 電気電子工学読解Ⅰ

    2024.4 - 2024.9   First semester

  • ナノプロセス工学特論Ⅰ

    2024.4 - 2024.6   Spring quarter

  • 電気情報数学Ⅰ(EC)

    2024.4 - 2024.6   Spring quarter

  • 電気電子工学演示Ⅱ

    2023.10 - 2024.3   Second semester

  • 電気電子工学読解Ⅱ

    2023.10 - 2024.3   Second semester

  • ナノプロセス工学特論Ⅱ

    2023.6 - 2023.8   Summer quarter

  • 電気情報数学Ⅱ(EC)

    2023.6 - 2023.8   Summer quarter

  • Advanced Research in Electrical and Electronic Eng II

    2023.4 - 2024.3   Full year

  • ナノプロセス特別講究

    2023.4 - 2024.3   Full year

  • Advanced Research in Nanoprocess

    2023.4 - 2024.3   Full year

  • 電気電子工学特別演習

    2023.4 - 2024.3   Full year

  • 電気電子工学特別研究Ⅰ

    2023.4 - 2024.3   Full year

  • 電気電子工学特別研究Ⅱ

    2023.4 - 2024.3   Full year

  • Advanced Seminar in Electrical and Electronic Engineering

    2023.4 - 2024.3   Full year

  • Advanced Research in Electrical and Electronic Engineering I

    2023.4 - 2024.3   Full year

  • 電気電子工学演示Ⅰ

    2023.4 - 2023.9   First semester

  • 電気情報数学(B)

    2023.4 - 2023.9   First semester

  • 数学演習B

    2023.4 - 2023.9   First semester

  • 電気電子工学読解Ⅰ

    2023.4 - 2023.9   First semester

  • ナノプロセス工学特論Ⅰ

    2023.4 - 2023.6   Spring quarter

  • 電気情報数学Ⅰ(EC)

    2023.4 - 2023.6   Spring quarter

  • 電気電子工学演示Ⅱ

    2022.10 - 2023.3   Second semester

  • 課題協学科目

    2022.10 - 2023.3   Second semester

  • 課題協学科目

    2022.10 - 2023.3   Second semester

  • 電気電子工学読解Ⅱ

    2022.10 - 2023.3   Second semester

  • ナノプロセス工学特論Ⅱ

    2022.6 - 2022.8   Summer quarter

  • 電気情報数学Ⅱ(EC)

    2022.6 - 2022.8   Summer quarter

  • 基幹教育セミナー

    2022.6 - 2022.8   Summer quarter

  • Advanced Seminar in Electrical and Electronic Engineering

    2022.4 - 2023.3   Full year

  • 国際演示技法

    2022.4 - 2023.3   Full year

  • 知的財産技法

    2022.4 - 2023.3   Full year

  • ティーチング演習

    2022.4 - 2023.3   Full year

  • 先端プロジェクト管理技法

    2022.4 - 2023.3   Full year

  • Scientific English Presentation

    2022.4 - 2023.3   Full year

  • Intellectual Property Management

    2022.4 - 2023.3   Full year

  • Exercise in Teaching

    2022.4 - 2023.3   Full year

  • Advanced Project Management Technique

    2022.4 - 2023.3   Full year

  • ナノプロセス特別講究

    2022.4 - 2023.3   Full year

  • Advanced Research in Nanoprocess

    2022.4 - 2023.3   Full year

  • 電気電子工学特別演習

    2022.4 - 2023.3   Full year

  • 電気電子工学特別講究第一

    2022.4 - 2023.3   Full year

  • 電気電子工学特別講究第二

    2022.4 - 2023.3   Full year

  • Advanced Research in Electrical and Electronic Engineering I

    2022.4 - 2023.3   Full year

  • Adv Res in Electrical and Electronic Engineering II

    2022.4 - 2023.3   Full year

  • 電気電子工学演示Ⅰ

    2022.4 - 2022.9   First semester

  • 工学概論(Ⅰ群)

    2022.4 - 2022.9   First semester

  • 数学演習B

    2022.4 - 2022.9   First semester

  • 電気電子工学読解Ⅰ

    2022.4 - 2022.9   First semester

  • ナノプロセス工学特論Ⅰ

    2022.4 - 2022.6   Spring quarter

  • 電気情報数学Ⅰ(EC)

    2022.4 - 2022.6   Spring quarter

  • 電気電子工学読解Ⅱ

    2021.10 - 2022.3   Second semester

  • 課題協学科目

    2021.10 - 2022.3   Second semester

  • ナノプロセス工学特論Ⅱ

    2021.6 - 2021.8   Summer quarter

  • 基幹教育セミナー

    2021.6 - 2021.8   Summer quarter

  • Advanced Seminar in Electrical and Electronic Engineering

    2021.4 - 2022.3   Full year

  • 知的財産技法

    2021.4 - 2022.3   Full year

  • ティーチング演習

    2021.4 - 2022.3   Full year

  • 先端プロジェクト管理技法

    2021.4 - 2022.3   Full year

  • Scientific English Presentation

    2021.4 - 2022.3   Full year

  • Intellectual Property Management

    2021.4 - 2022.3   Full year

  • Exercise in Teaching

    2021.4 - 2022.3   Full year

  • Advanced Project Management Technique

    2021.4 - 2022.3   Full year

  • ナノプロセス特別講究

    2021.4 - 2022.3   Full year

  • Advanced Research in Nanoprocess

    2021.4 - 2022.3   Full year

  • 電気電子工学特別演習

    2021.4 - 2022.3   Full year

  • 電気電子工学特別講究第一

    2021.4 - 2022.3   Full year

  • 電気電子工学特別講究第二

    2021.4 - 2022.3   Full year

  • Advanced Research in Electrical and Electronic Engineering I

    2021.4 - 2022.3   Full year

  • Adv Res in Electrical and Electronic Engineering II

    2021.4 - 2022.3   Full year

  • [M2]電気電子工学演習第三

    2021.4 - 2021.9   First semester

  • 電気情報数学(B)

    2021.4 - 2021.9   First semester

  • 数学演習Ⅱ

    2021.4 - 2021.9   First semester

  • 電気電子工学読解Ⅰ

    2021.4 - 2021.9   First semester

  • ナノプロセス工学特論Ⅰ

    2021.4 - 2021.6   Spring quarter

  • 電気電子工学演習第二

    2020.10 - 2021.3   Second semester

  • 基幹教育セミナー

    2020.6 - 2020.8   Summer quarter

  • Advanced Seminar in Electrical and Electronic Engineering

    2020.4 - 2021.3   Full year

  • ティーチング演習

    2020.4 - 2021.3   Full year

  • 先端プロジェクト管理技法

    2020.4 - 2021.3   Full year

  • Scientific English Presentation

    2020.4 - 2021.3   Full year

  • Intellectual Property Management

    2020.4 - 2021.3   Full year

  • Exercise in Teaching

    2020.4 - 2021.3   Full year

  • Advanced Project Management Technique

    2020.4 - 2021.3   Full year

  • ナノプロセス特別講究

    2020.4 - 2021.3   Full year

  • Advanced Research in Nanoprocess

    2020.4 - 2021.3   Full year

  • 電気電子工学特別演習

    2020.4 - 2021.3   Full year

  • 電気電子工学特別講究第一

    2020.4 - 2021.3   Full year

  • 電気電子工学特別講究第二

    2020.4 - 2021.3   Full year

  • Advanced Research in Electrical and Electronic Engineering I

    2020.4 - 2021.3   Full year

  • Adv Res in Electrical and Electronic Engineering II

    2020.4 - 2021.3   Full year

  • 知的財産技法

    2020.4 - 2021.3   Full year

  • 国際演示技法

    2020.4 - 2021.3   Full year

  • 数学演習II

    2020.4 - 2020.9   First semester

  • ナノプロセス工学特論

    2020.4 - 2020.9   First semester

  • 基幹教育セミナー

    2020.4 - 2020.9   First semester

  • 電気情報数学

    2020.4 - 2020.9   First semester

  • ナノプロセス工学特論

    2020.4 - 2020.9   First semester

  • 電気情報数学(B)

    2020.4 - 2020.9   First semester

  • 数学演習Ⅱ

    2020.4 - 2020.9   First semester

  • 電気電子工学演習第一

    2020.4 - 2020.9   First semester

  • 電気電子工学演習第三

    2020.4 - 2020.9   First semester

  • 電気電子工学演習第二

    2019.10 - 2020.3   Second semester

  • 電気情報数学

    2019.4 - 2019.9   First semester

  • 電気情報数学(B)

    2019.4 - 2019.9   First semester

  • 数学演習Ⅱ

    2019.4 - 2019.9   First semester

  • ナノプロセス工学特論

    2019.4 - 2019.9   First semester

  • 電気電子工学演習第一

    2019.4 - 2019.9   First semester

  • 電気電子工学演習第三

    2019.4 - 2019.9   First semester

  • ナノプロセス工学特論

    2019.4 - 2019.9   First semester

  • 数学演習II

    2019.4 - 2019.9   First semester

  • 電気電子工学演習第二

    2018.10 - 2019.3   Second semester

  • 電気情報工学入門Ⅱ

    2018.10 - 2019.3   Second semester

  • 電気情報数学

    2018.4 - 2018.9   First semester

  • 電気情報工学入門Ⅰ

    2018.4 - 2018.9   First semester

  • 電気情報数学

    2018.4 - 2018.9   First semester

  • 数学演習Ⅱ

    2018.4 - 2018.9   First semester

  • 電気電子工学演習第一

    2018.4 - 2018.9   First semester

  • 電気電子工学演習第三

    2018.4 - 2018.9   First semester

  • 電気情報工学入門I

    2018.4 - 2018.9   First semester

  • ナノプロセス工学特論

    2018.4 - 2018.9   First semester

  • 数学演習II

    2018.4 - 2018.9   First semester

  • 電気電子工学演習第二

    2017.10 - 2018.3   Second semester

  • Advanced Project Management Technique

    2017.4 - 2018.3   Full year

  • 国際演示技法

    2017.4 - 2018.3   Full year

  • 知的財産技法

    2017.4 - 2018.3   Full year

  • ティーチング演習

    2017.4 - 2018.3   Full year

  • 先端プロジェクト管理技法

    2017.4 - 2018.3   Full year

  • Overseas Internship

    2017.4 - 2018.3   Full year

  • Scientific English Presentation

    2017.4 - 2018.3   Full year

  • Intellectual Property Management

    2017.4 - 2018.3   Full year

  • Exercise in Teaching

    2017.4 - 2018.3   Full year

  • 電気情報数学

    2017.4 - 2017.9   First semester

  • 電気情報数学

    2017.4 - 2017.9   First semester

  • 数学演習Ⅱ

    2017.4 - 2017.9   First semester

  • 電気電子工学演習第一

    2017.4 - 2017.9   First semester

  • 電気電子工学演習第三

    2017.4 - 2017.9   First semester

  • 電気電子工学特別研究第ニ

    2017.4 - 2017.9   First semester

  • ナノプロセス工学特論

    2017.4 - 2017.9   First semester

  • 数学演習II

    2017.4 - 2017.9   First semester

  • 電気情報数学

    2016.4 - 2016.9   First semester

  • ナノプロセス工学特論

    2016.4 - 2016.9   First semester

  • 数学演習II

    2016.4 - 2016.9   First semester

  • 電気情報数学

    2015.4 - 2015.9   First semester

  • ナノプロセス工学特論

    2015.4 - 2015.9   First semester

  • 数学演習II

    2015.4 - 2015.9   First semester

  • 電子情報工学基礎

    2014.4 - 2014.9   First semester

  • ナノプロセス工学特論

    2014.4 - 2014.9   First semester

  • 電気情報数学

    2014.4 - 2014.9   First semester

  • ナノプロセス工学特論

    2013.4 - 2013.9   First semester

  • 電子情報工学基礎

    2013.4 - 2013.9   First semester

  • 電気情報数学

    2013.4 - 2013.9   First semester

  • 電気情報数学

    2011.4 - 2011.9   First semester

  • ナノプロセス工学特論

    2011.4 - 2011.9   First semester

  • 電気情報数学

    2010.4 - 2010.9   First semester

  • ナノプロセス工学特論

    2010.4 - 2010.9   First semester

  • 電気情報工学実験II

    2009.10 - 2010.3   Second semester

  • 電気情報工学実験I

    2009.4 - 2009.9   First semester

  • 電気情報工学実験II

    2008.10 - 2009.3   Second semester

  • 電気情報工学実験I

    2008.4 - 2008.9   First semester

  • 電気情報工学実験II

    2007.10 - 2008.3   Second semester

  • 電気情報工学実験I

    2007.4 - 2007.9   First semester

  • 電気情報工学実験II

    2006.10 - 2007.3   Second semester

  • 電気情報工学実験I

    2006.4 - 2006.9   First semester

  • 電気情報工学実験II

    2005.10 - 2006.3   Second semester

  • 電気情報工学実験I

    2005.4 - 2005.9   First semester

  • 電気情報工学実験II

    2004.10 - 2005.3   Second semester

  • 電気情報工学実験I

    2004.4 - 2004.9   First semester

  • 電気情報工学実験II

    2003.10 - 2004.3   Second semester

▼display all

FD Participation

  • 2024.3   Role:Participation   Title:【シス情FD】高度データサイエンティスト育成事業の取り組みについて

    Organizer:[Undergraduate school/graduate school/graduate faculty]

  • 2023.11   Role:Participation   Title:【シス情FD】企業等との共同研究の実施増加に向けて

    Organizer:[Undergraduate school/graduate school/graduate faculty]

  • 2023.10   Role:Participation   Title:【シス情FD】価値創造型半導体人材育成センターについて

    Organizer:[Undergraduate school/graduate school/graduate faculty]

  • 2023.9   Role:Participation   Title:【シス情FD】Top10%論文/Top10%ジャーナルとは何か: 傾向と対策

    Organizer:[Undergraduate school/graduate school/graduate faculty]

  • 2023.7   Role:Participation   Title:【シス情FD】若手教員の研究紹介⑨

    Organizer:[Undergraduate school/graduate school/graduate faculty]

  • 2023.6   Role:Participation   Title:【シス情FD】SBRC、QRECの活動ご紹介

    Organizer:[Undergraduate school/graduate school/graduate faculty]

  • 2023.3   Role:Participation   Title:【シス情FD】独・蘭・台湾での産学連携を垣間見る-Industy 4.0・量子コンピューティング・先端半導体-

    Organizer:[Undergraduate school/graduate school/graduate faculty]

  • 2022.9   Role:Participation   Title:【シス情FD】研究機器の共用に向けて

    Organizer:[Undergraduate school/graduate school/graduate faculty]

  • 2022.4   Role:Participation   Title:【シス情FD】第4期中期目標・中期計画等について

    Organizer:[Undergraduate school/graduate school/graduate faculty]

  • 2021.12   Role:Participation   Title:【シス情FD】企業出身教員から見た大学

    Organizer:[Undergraduate school/graduate school/graduate faculty]

  • 2021.9   Role:Participation   Title:博士後期課程の充足率向上に向けて

    Organizer:[Undergraduate school/graduate school/graduate faculty]

  • 2021.7   Role:Participation   Title:若手教員による研究紹介 及び 科研取得のポイント、その他について ②

    Organizer:[Undergraduate school/graduate school/graduate faculty]

  • 2021.6   Role:Participation   Title:若手教員による研究紹介 及び 科研取得のポイントについて ①

    Organizer:[Undergraduate school/graduate school/graduate faculty]

  • 2021.5   Role:Participation   Title:先導的人材育成フェローシップ事業(情報・AI分野)について

    Organizer:[Undergraduate school/graduate school/graduate faculty]

  • 2020.11   Role:Participation   Title:マス・フォア・イノベーション卓越大学院について

    Organizer:[Undergraduate school/graduate school/graduate faculty]

  • 2019.6   Role:Participation   Title:8大学情報系研究科長会議の報告

    Organizer:[Undergraduate school/graduate school/graduate faculty]

  • 2019.3   Role:Participation   Title:3ポリシー見直し方針に関する全学FD

    Organizer:University-wide

  • 2018.11   Role:Participation   Title:工学部FD ハラスメント出前ミニ講座

    Organizer:[Undergraduate school/graduate school/graduate faculty]

  • 2018.11   Role:Participation   Title:システム情報科学研究院FD 科学技術基本政策の今と未来

    Organizer:[Undergraduate school/graduate school/graduate faculty]

  • 2016.1   Role:Participation   Title:平成27年度第2回工学部・工学府FD

    Organizer:[Undergraduate school/graduate school/graduate faculty]

  • 2009.7   Role:Participation   Title:平成21年度第1回システム情報科学府ファカルティディベロップメント

    Organizer:[Undergraduate school/graduate school/graduate faculty]

  • 2009.3   Role:Participation   Title:第2回ファカルティディベロップメント

    Organizer:[Undergraduate school/graduate school/graduate faculty]

  • 2008.3   Role:Participation   Title:システム情報科学府FD

    Organizer:[Undergraduate school/graduate school/graduate faculty]

  • 2007.4   Role:Participation   Title:平成19年度第1回全学FD

    Organizer:University-wide

▼display all

Participation in international educational events, etc.

  • 2010.8

    九州大学・釜山大学

    釜山大学とのStudent exchange program

      More details

    Venue:日本・福岡 韓国・釜山

Other educational activity and Special note

  • 2023  Class Teacher  学部

  • 2022  Class Teacher  学部

  • 2021  Class Teacher  学部

  • 2020  Class Teacher  学部

  • 2019  Class Teacher  学部

  • 2018  Class Teacher  学部

  • 2015  Class Teacher  学部

  • 2014  Class Teacher  学部

  • 2013  Class Teacher  学部

▼display all

Social Activities

  • 世界一行きたい科学広場inふくおか2014

    世界一行きたい科学広場inふくおか実行委員会  ホークスタウンモール特設会場  2014.11

     More details

    Audience:General, Scientific, Company, Civic organization, Governmental agency

    Type:Lecture

  • 世界一行きたい科学広場inふくおか2014

    世界一行きたい科学広場inふくおか実行委員会  ホークスタウンモール特設会場  2014.11

     More details

    Type:Visiting lecture

    researchmap

  • 最先端プラズマ技術で作る太陽電池

    応用物理学会,プラズマ・核融合学会  アイレフ  2010.7

     More details

    Audience:General, Scientific, Company, Civic organization, Governmental agency

    Type:Lecture

  • リフレッシュ理科教室

    応用物理学会,福岡市立少年科学文化会館  福岡市立少年科学文化会館  2010.7

     More details

    Audience:General, Scientific, Company, Civic organization, Governmental agency

    Type:Other

  • リフレッシュ理科教室

    応用物理学会,福岡市立少年科学文化会館  福岡市立少年科学文化会館  2010.7

     More details

    Type:Other

    researchmap

  • 最先端プラズマ技術で作る太陽電池

    応用物理学会,プラズマ・核融合学会  アイレフ  2010.7

     More details

    Type:Visiting lecture

    researchmap

  • いとしまサイエンスキャラバン

    九州大学  二丈町役場  2008.2

     More details

    Audience:General, Scientific, Company, Civic organization, Governmental agency

    Type:Lecture

  • いとしまサイエンスキャラバン

    九州大学  二丈町役場  2008.2

     More details

    Type:Visiting lecture

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  • リフレッシュ理科教室

    応用物理学会,福岡市立少年科学文化会館  福岡市立少年科学文化会館  2007.7

     More details

    Audience:General, Scientific, Company, Civic organization, Governmental agency

    Type:Other

  • リフレッシュ理科教室

    応用物理学会,福岡市立少年科学文化会館  福岡市立少年科学文化会館  2007.7

     More details

    Type:Other

    researchmap

  • リフレッシュ理科教室

    応用物理学会,福岡市立少年科学文化会館  福岡市立少年科学文化会館  2005.7

     More details

    Audience:General, Scientific, Company, Civic organization, Governmental agency

    Type:Other

  • リフレッシュ理科教室

    応用物理学会,福岡市立少年科学文化会館  福岡市立少年科学文化会館  2005.7

     More details

    Type:Other

    researchmap

  • 科学と生活のフェスティバル

    応用物理学会  名古屋市科学館  2001.6

     More details

    Audience:General, Scientific, Company, Civic organization, Governmental agency

    Type:Other

  • 科学と生活のフェスティバル

    応用物理学会  名古屋市科学館  2001.6

     More details

    Type:Other

    researchmap

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Media Coverage

  • 八重山日報2023年3月7日の7面に、プラズマ農業に関する記事掲載。 Newspaper, magazine

    八重山日報  2023.3

     More details

    八重山日報2023年3月7日の7面に、プラズマ農業に関する記事掲載。

  • ニュース番組「おはよう日本」内企画「サイカル研究室」2022年10月放映に出演。 TV or radio program

    NHK  2022.10

     More details

    ニュース番組「おはよう日本」内企画「サイカル研究室」2022年10月放映に出演。

Travel Abroad

  • 2011.10 - 2012.9

    Staying countory name 1:Germany   Staying institution name 1:Institute for Experimental Physics V: Plasma and Atom Physics, Ruhr-University Bochum