2024/10/08 更新

お知らせ

 

写真a

コガ カズノリ
古閑 一憲
KOGA KAZUNORI
所属
システム情報科学研究院 情報エレクトロニクス部門 教授
プラズマナノ界面工学センター (併任)
工学部 電気情報工学科(併任)
システム情報科学府 電気電子工学専攻(併任)
マス・フォア・イノベーション連係学府 (併任)
職名
教授
連絡先
メールアドレス
プロフィール
1)研究活動概要  半導体産業などの先端産業を支える基盤技術の中にプラズマプロセスがある。プラズマプロセスの発展が半導体産業の発展つながる事から、プラズマプロセスの高精度化が様々角度から進められている。当研究室ではプラズマプロセスの高精度技術の開発と新たな応用展開の開拓を主な課題として、次のような研究を行っている. ・高品質半導体/炭素薄膜プロセスの創成 ・プラズマのバイオ応用研究 ・高品質半導体/炭素薄膜プロセスの創成  ドライプロセスであるプラズマは、不純物の少ない薄膜堆積法として、現在半導体デバイスや太陽光発電をはじめとする様々な分野で活用されている。次世代デバイスの実現にはプラズマプロセスの高性能化は必須であり、当研究室では、プラズマプロセスの基礎研究と製造技術の開発に世界に先駆けて取り組んでいる。  その関連研究として、プラズマ応用計測技術の開発やプラズマで発生するナノ粒子用いたナノ構造デバイスの創製などを行っている。 ・プラズマのバイオ応用研究  プラズマで発生する化学的活性な分子をもちいて生体応答を制御する研究が世界中で活発に研究されている。当研究室では、植物を対象にプラズマ照射による成長促進機構の解明と農業応用を検討している。種子への短時間照射による、成長促進を発見ししている。  その他、プラズマプロセスやプラズマエッチングに深く関与するプラズマシースに励起される非線形現象の研究や、プラズマプロセスの情報学的検討なども行っている。 2)教育活動概要  学部講義・演習と大学院生向け講義を担当している。
ホームページ
外部リンク

研究分野

  • ものづくり技術(機械・電気電子・化学工学) / 電気電子材料工学

  • ナノテク・材料 / 薄膜、表面界面物性

  • エネルギー / プラズマ科学

  • エネルギー / プラズマ応用科学

学位

  • 博士(理学)

経歴

  • - Kyushu University, Research Associate.

    1999年

      詳細を見る

  • - 九州大学 助手

    1999年

      詳細を見る

学歴

  • 九州大学

    - 1999年

      詳細を見る

  • 九州大学   総合理工学研究科   高エネルギー理工学

    - 1999年

      詳細を見る

    国名: 日本国

    researchmap

  • 九州大学

    - 1994年

      詳細を見る

  • 九州大学   理学部   物理学

    - 1994年

      詳細を見る

    国名: 日本国

    researchmap

研究テーマ・研究キーワード

  • 研究テーマ:プラズマ物理学

    研究キーワード:プラズマ物理学

    研究期間: 2024年

  • 研究テーマ:プラズマプロセス

    研究キーワード:プラズマプロセス

    研究期間: 2024年

  • 研究テーマ:プラズマナノテクノロジー

    研究キーワード:プラズマナノテクノロジー

    研究期間: 2024年

  • 研究テーマ:プラズマ農業

    研究キーワード:プラズマ農業

    研究期間: 2024年

  • 研究テーマ:第4世代プラズマバイオテクノロジーの創成

    研究キーワード:細胞活性制御

    研究期間: 2009年4月

  • 研究テーマ:次世代LSI用低誘電率層間絶縁膜形成技術の開発

    研究キーワード:低誘電率層間絶縁膜

    研究期間: 2002年1月

  • 研究テーマ:プラズマ・カーボン壁相互作用による微粒子形成機構の研究

    研究キーワード:プラズマ・壁相互作用,核融合

    研究期間: 2001年1月

  • 研究テーマ:ナノ粒子を用いたカーボン薄膜の物性制御

    研究キーワード:アモルファスカーボン

    研究期間: 1999年4月

  • 研究テーマ:次世代LSI用銅配線技術の開発

    研究キーワード:銅配線

    研究期間: 1999年4月

  • 研究テーマ:高品質太陽光発電材料の高速製造技術の研究

    研究キーワード:アモルファスシリコン

    研究期間: 1999年4月

  • 研究テーマ:プロセスプラズマ中の微粒子成長機構の解明と成長制御の研究

    研究キーワード:プロセスプラズマ,微粒子

    研究期間: 1999年4月

受賞

  • 第21回プラズマ材料科学賞奨励部門賞

    2020年2月   プラズマ材料科学賞選考委員会  

     詳細を見る

    反応性プラズマにおけるナノ粒子成長揺らぎの制御に関する研究

  • 第14回プラズマエレクトロニクス賞

    2016年3月   応用物理学会プラズマエレクトロニクス分科会  

     詳細を見る

    "Synthesis and characterization of ZnInON semiconductor: a ZnO-based compound with tunable band gap" N. Itagaki, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani

  • ICMAP2014 Best Poster Presentation Award

    2014年7月   International Conference of Microelectronics and Plasma Technology 2014 (ICMAP2014)  

     詳細を見る

    "Atmospheric Pressure DBD Plasma Irradiation to Seeds of Glycine max (L.)Merrill and Vigna radiata" T. Amano, T. Sarinont, K. Koga, and M. Shiratani

  • ICMAP2014 Best Poster Presentation Award

    2013年8月   International Conference of Microelectronics ans Plasma Technology 2014 (ICMAP2014)  

     詳細を見る

    "Atmospheric Pressure DBD Plasma Irradiation to Seeds of Glycine max (L.)Merrill and Vigna radiata" T. Amano, T. Sarinont, K. Koga, and M. Shiratani

  • The 9th Asian-European International Conference of Plasma Surface Engineering(AEPSE2013)/ Outstanding Poster Award

    2013年8月  

     詳細を見る

    "Time evolution of spatial profile of nanoparticle amount in reactive plasmas" Y. Morita, S. Iwashita, D. Yamashita, G. Uchida, K. Kamataki, H. Seo, N. Itagaki, K. Koga and M. Shiratani

  • ISSP2013 Best Poster Award

    2013年7月   12th International Symposium on Sputtering & Plasma Processes  

     詳細を見る

    "Sputter Deposition of Single Crystal ZnO Films on 18% Lattice mismatched c-Al2O3 Substrates via Nitrogen Mediated Crystallization" N. Itagaki, K. Kuwahara, I. Suhariadi, K. Oshikawa, K. Matsushima, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, and M. Shiratani

  • Advanced Plasma Application Award

    2012年10月   11th Asia Pacific Conference on Plasma Science adn Technology (APCPST) & 25th Symposium on Plasma Science for Materials (SPSM)  

     詳細を見る

    Zinc-Indium Oxynitride Thin Films for Multiple-Quantum–Well Solar Cells
    N. Itagaki, K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani

  • IUMRS-ICEM2012 "Young Scientist Awards: Silver Award Winners"

    2012年9月  

     詳細を見る

    "High Capacity Li Ion Battery Anodes Using Silicon Carbide Nanoparticles Produced by Double Multi-Hollow Discharge Plasma CVD"
    K. Kamataki, M. Shiratani, T. Ishihara, H. Nagano, Y. Morita, K. Kuwahara, G. Uchida, H. Seo, N. Itagaki, K. Koga

  • Best Presentation Award

    2012年3月   ISPlasma2012  

     詳細を見る

    Interaction between amplitude modulated reactive plasmas and nanoparitcles grown in the plasmas
    KUNIHIRO KAMATAKI, KAZUNORI KOGA, GIICHIRO UCHIDA, NAHO ITAGAKI, HYUNWOONG SEO AND MASAHARU SHIRATANI

  • Invited Presentation Award

    2008年6月   Interfinish 2008 World Congress and Exposition  

     詳細を見る

    "Deposition profile control of plasma CVD films on nano-patterned substrates" M. Shiratani, K. Koga

  • 応用物理学会第3回プラズマエレクトロニクス賞

    2005年3月   応用物理学会プラズマエレクトロニクス分科会  

     詳細を見る

    対象論文 “Cluster-suppressed plasma chemical vapor deposition method for high quality hydrgenated amorphous silicon films”, K. Koga, M. Kai, M. Shiratani, Y. Watanabe, and N. Shikatani, Japanese Journal of Applied Physics, Vol.41, pp. L168-170 (2002).

  • 第10回応用物理学会講演奨励賞

    2001年5月   応用物理学会  

     詳細を見る

    対象講演「クラスタ抑制プラズマCVD装置による高品質a-Si : H作製」
    (古閑一憲, 園田剛士,鹿谷昇,白谷正治,渡辺征夫)

▼全件表示

論文

  • Comparison between Ar+CH4 Cathode and Anode Coupled Capacitively Coupled Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Carbon Films 査読 国際誌

    S. H. Hwang, R. Iwamoto, T. Okumura, K. Kamataki, N. Itagaki, K. Koga, T. Nakatani, M. Shiratani

    Thin Solid Films   729   2021年7月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.tsf.2021.138701

  • Synthesis of Yb3+/Ho3+ co-doped Y2O3 nanoparticles and its application to dye sensitized solar cells 査読 国際誌

    F. L. Chawarambwa, T. E. Putri, K. Kamataki, M. Shiratani, K. Koga, N. Itagaki, D. Nakamura

    J. Mol. Struct.   1228   2021年3月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.molstruc.2020.129479

  • Alterations of DNA Methylation Caused by Cold Plasma Treatment Restore Delayed Germination of Heat-Stressed Rice (Oryza sativa L.) Seeds 査読 国際誌

    C. Suriyasak, K. Hatanaka, H. Tanaka, T. Okumura, D. Yamashita, P. Attri, K. Koga, M. Shiratani, N. Hamaoka, Y. Ishibashi

    ACS Agric. Sci. Technol.   1 ( 1 )   2021年2月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1021/acsagscitech.0c00070

  • Impact of seed color and storage time on the radish seed germination and sprout growth in plasma agriculture 査読 国際誌

    P. Attri, K. Ishikawa, T. Okumura, K. Koga, M. Shiratani, V. Mildaziene

    Sci. Rep.   11 ( 1 )   2021年1月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1038/s41598-021-81175-x

  • Effects of Activated Carbon Counter Electrode On Bifacial Dye Sensitized Solar Cells (DSSCs) 査読 国際誌

    T. E. Putri, Y. Hao, F. L. Chawarambwa, H. Seo, Min-Kyu Son, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Mater. Sci. Forum   1016   2021年1月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.4028/www.scientific.net/MSF.1016.863

  • Possible impact of plasma oxidation on the structure of C-terminal domain of SARS-CoV-2 spike protein: a computational study 査読 国際誌

    P. Attri, K. Koga, M. Shiratani

    Jpn. J. Appl. Phys.   14 ( 2 )   2021年1月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.35848/1882-0786/abd717

  • Long-term response of Norway spruce to seed treatment with cold plasma: dependence of the effects on the genotype 査読 国際誌

    Plasma Process Polym   2020年12月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1002/ppap.202000159

  • Experimental identification of the reactive oxygen species transported into a liquid by plasma irradiation 査読 国際誌

    T. Kawasaki, K. Koga, M. Shiratani

    Jpn. J. Appl. Phys.   59 ( 11 )   2020年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.35848/1347-4065/abc3a1

  • Size and flux of carbon nanoparticles synthesized by Ar+CH4 multi-hollow plasma chemical vapor deposition 査読 国際誌

    S. H. Hwang, T. Okumura, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Diam Relat Mater   109   2020年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.diamond.2020.108050

  • Graphene-Si3N4 nanocomposite blended polymer counter electrode for low-cost dye-sensitized solar cells 査読 国際誌

    F. L. Chawarambwa, T. E. Putri, M. K. Son, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Chem. Phys. Lett.   758   2020年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.cplett.2020.137920

  • Synthesis of Yb3+/Ho3+ co-doped Y2O3 nanoparticles and its application to dye sensitized solar cells 査読 国際誌

    F. L. Chawarambwa, T. E. Putri, K. Kamataki, M. Shiratani, K. Koga, N. Itagaki, D. Nakamura

    J. Mol. Struct.   2020年10月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.molstruc.2020.129479

  • Impact of surface morphologies of substrates on the epitaxial growth of magnetron sputtered (ZnO)x(InN)1-x films 査読 国際誌

    R. Narishige, K. Kaneshima, D. Yamashita, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    Jpn. J. Appl. Phys.   60 ( SA )   2020年10月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.35848/1347-4065/abba0c

  • Cold plasma treatment of sunflower seeds modulates plant-associated microbiome and stimulates root and lateral organ growth 査読 国際誌

    Front. Plant Sci.   11   2020年8月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.3389/fpls.2020.568924

  • Real-time monitoring of surface passivationof crystalline silicon during growth of amorphous and epitaxial silicon layer 査読 国際誌

    S. Nunomura, I. Sakata, H. Sakakita, K. Koga, M. Shiratani

    J. Appl. Phys.   128 ( 3 )   2020年7月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1063/5.0011563

  • Cold plasma treatment of Arabidopsis thaliana (L.) seeds modulates plant-associated microbiome composition 査読 国際誌

    Applied Physics Express   13   2020年5月

     詳細を見る

    記述言語:英語  

    DOI: 10.35848/1882-0786/ab9712

  • Growth of single crystalline films on lattice-mismatched substrates through 3D to 2D mode transition 査読 国際誌

    N. Itagaki, Y. Nakamura, R. Narishige, K. Takeda, K. Kamataki, K. Koga, M. Hori, M. Shiratani

    Sci. Rep.   10 ( 1 )   2020年3月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1038/s41598-020-61596-w

  • Effects of surrounding gas on plasma-induced downward liquid flow 査読 国際誌

    T. Kawasaki, K. Nishida, G. Uchida, F. Mitsugi, K. Takenaka, K. Koga, Y. Setsuhara, M. Shiratani

    Jpn. J. Appl. Phys.   59 ( SH )   2020年3月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.35848/1347-4065/ab71dc

  • Impact of radish sprouts seeds coat color on the electron paramagnetic resonance signals after plasma treatment 査読 国際誌

    K. Koga, P. Attri, K. Kamataki, N. Itagaki, M. Shiratani, V. Mildaziene

    Jpn. J. Appl. Phys.   59 ( SH )   2020年3月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.35848/1347-4065/ab7698

  • Relationship between cold plasma treatment-induced changes in radish seed germination and phytohormone balance 査読 国際誌

    L. D. Fomins, G. Pauzaite, R. Zukiene, V. Mildaziene, K. Koga, M. Shiratani

    Jpn. J. Appl. Phys.   59   2020年2月

     詳細を見る

    記述言語:英語  

    DOI: 10.7567/1347-4065/ab656c

  • Dielectric barrier discharge plasma treatment-induced changes in sunflower seed germination, phytohormone balance, and seedling growth 査読 国際誌

    R. Zukiene, Z. Nauciene, I. Januskaitiene, G. Pauzaite, V. Mildaziene, K. Koga, M. Shiratani

    Appl. Phys. Express   12 ( 12 )   2019年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/1882-0786/ab5491

  • Identification and Suppression of Si-H2 Bond Formation at P/I Interface in a-Si:H Films Deposited by SiH4 Plasma CVD 査読 国際誌

    K. Tanaka, H. Hara, S. Nagaishi, L. Shi, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Plasma Fusion Res.   14   2019年9月

     詳細を見る

    記述言語:英語  

    DOI: 10.1585/pfr.14.4406141

  • Spatial-Structure of Fluctuation of Amount of Nanoparticles in Amplitude-Modulated VHF Discharge Reactive Plasma 査読 国際誌

    R. Zhou, K. Kamataki, H. Ohtomo, D. Yamashita, N. Itagaki, K. Koga, M. Shiratani

    Plasma Fusion Res.   14   2019年9月

     詳細を見る

    記述言語:英語  

    DOI: 10.1585/pfr.14.4406120

  • Effects of Gas Pressure on the Size Distribution and Structure of Carbon Nanoparticles Using Ar + CH4 Multi-Hollow Discharged Plasma Chemical Vapor Deposition 査読 国際誌

    S. H. Hwang, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Plasma Fusion Res.   14   2019年9月

     詳細を見る

    記述言語:英語  

    DOI: 10.1585/pfr.14.4406115

  • Effect of Higher-Order Silane Deposition on Spatial Profile of Si-H2/Si-H Bond Density Ratio of a-Si:H Films 査読 国際誌

    L. Shi, K. Tanaka, H. Hara, S. Nagaishi, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Plasma Fusion Res.   14   2019年9月

     詳細を見る

    記述言語:英語  

    DOI: 10.1585/pfr.14.4406144

  • Progress and perspectives in dry processes for emerging multidisciplinary applications: how can we improve our use of dry processes? 査読 国際誌

    T. Iwase, Y. Kamaji, S. Y. Kang, K. Koga, N. Kuboi, M. Nakamura, N. Negishi, T. Nozaki, S. Nunomura, D. Ogawa, M. Omura, T. Shimizu, K. Shinoda, Y. Sonoda, H. Suzuki, K. Takahashi, T. Tsutsumi, K. Yoshikawa, T. Ishijima, K. Ishikawa

    Jpn. J. Appl. Phys.   58   2019年6月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/1347-4065/ab163a

  • Effects of gas velocity on deposition rate and amount of cluster incorporation into a-Si:H films fabricated by SiH4 plasma chemical vapor deposition 査読 国際誌

    T. Kojima, S. Toko, K. Tanaka, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    Plasma Fusion Res.   13   1406082   2018年6月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1585/pfr.13.1406082

  • Dependence of CO2 Conversion to CH4 on CO2 Flow Rate in Helicon Discharge Plasma 査読 国際誌

    S. Toko, R. Katayama, K. Koga, E. Leal-Quiros, M. Shiratani

    Sci. Adv. Mater.   10 ( 5 )   2018年5月

     詳細を見る

    記述言語:英語  

    DOI: 10.1166/sam.2018.3141

  • Synthesis of Nanoparticles using Low Temperature Plasmas and Its Application to Solar Cells and Tracers in Living Body 査読 国際誌

    K. Koga, H. Seo, A. Tanaka, N. Itagaki, M. Shiratani

    ECS Transactions   77 ( 3 )   2017年5月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1149/07703.0017ecst

  • Plant Growth Enhancement of Seeds Immersed in Plasma Activated Water 査読 国際誌

    T. Sarinont, R. Katayama, Y. Wada, K. Koga, M. Shiratani

    MRS Adv.   2 ( 18 )   2017年2月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1557/adv.2017.178

  • Response of Silkworm Larvae to Atmospheric Pressure Non-thermal Plasma Irradiation 査読 国際誌

    T. Sarinont, Y. Wada, K. Koga, M. Shiratani

    Plasma Medicine   6 ( 3-4 )   2017年1月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1615/PlasmaMed.2017019137

  • Effects of sputtering gas pressure dependence of surface morphology of ZnO films fabricated via nitrogen mediated crystallization 査読 国際誌

    K. Iwasaki, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    MRS Adv.   2 ( 5 )   2016年12月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1557/adv.2016.617

  • Blue Photoluminescence of (ZnO)0.92(InN)0.08 査読 国際誌

    K. Matsushima, K. Iwasaki, N. Miyahara, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    MRS Adv.   2 ( 5 )   2016年12月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1557/adv.2016.625

  • Fluctuation of Position and Energy of a Fine Particle in Plasma Nanofabrication 査読 国際誌

    M. Shiratani, M. Soejima, H. Seo, N. Itagaki, K. Koga

    Materials Science Forum   879   2016年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.4028/www.scientific.net/MSF.879.1772

  • R&D status of agricultural applications of high voltage and plasma in Japan 招待 国際誌

    M. Shiratani, T. Sarinont, K. Koga and N. Hayashi

    Proc. Workshop on Application of Advanced Plasma Technologies in CE Agriculture   2016年4月

     詳細を見る

    記述言語:英語  

  • Quantum Characterization of Si Nano-Particles Fabricated by Multi-Hollow Discharge Plasma Chemical Vapor Deposition 査読 国際誌

    H. Seo, G. Uchida, N. Itagaki, K. Koga, and M. Shiratani

    Sci. Adv. Mater.   8 ( 3 )   2016年3月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1166/sam.2016.2520

  • Room Temperature Fabrication of (ZnO)x(InN)1-x films with Step-Terrace Structure by RF Magnetron Sputtering 査読 国際誌

    K. Matsushima, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    MRS Advances   1 ( 2 )   2016年1月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1557/adv.2015.59

  • Plant Growth Response to Atmospheric Air Plasma Treatments of Seeds of 5 Plant Species 査読 国際誌

    M. Shiratani, T. Sarinont, T. Amano, N. Hayashi, K. Koga

    MRS Adv.   1 ( 18 )   2016年1月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1557/adv.2016.37

  • Production of In, Au, and Pt nanoparticles by discharge plasmas in water for assessment of their bio-compatibility and toxicity 査読 国際誌

    T. Amano, T. Sarinont, K. Koga, M. Hirata, A. Tanaka, M. Shiratani

    MRS Adv.   1 ( 18 )   2016年1月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1557/adv.2016.41

  • 水素プラズマとカーボン壁の相互作用で発生したダストに対するダスト除去フィルタのダスト除去性能評価

    白谷正治, 古閑一憲, 立石瑞樹, 片山龍, 山下大輔, 鎌滝晋礼, 徐鉉雄, 板垣奈穂, 芦川直子, 時谷政行, 増崎貴, 西村清彦, 相良明男, LHD実験グループ

    九州大学超顕微解析研究センター報告   39   2015年12月

     詳細を見る

    記述言語:日本語  

  • Raman Spectroscopy of a-C:H Films Deposited Using Ar + H2+ C7H8 Plasma CVD 査読 国際誌

    X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    Proc. 68th GEC/9th ICRP/33rd SPP   60 ( 9 )   2015年10月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

  • Discharge characteristics and hydrodynamics behaviors of atmospheric plasma jets produced in various gas flow patterns 査読 国際誌

    Y. Setsuhara, G. Uchida, A. Nakajima, K. Takenaka, K. Koga, M. Shiratani

    Proc. 68th GEC/9th ICRP/33rd SPP   60 ( 9 )   2015年10月

     詳細を見る

    記述言語:英語  

  • Gas flow rate dependence of the production of reactive oxygen species in liquid by a plasma-jet irradiation 査読 国際誌

    G. Uchida, A. Nakajima, T. Kawasaki, K. Koga, K. Takenaka, M. Shiratani, Y. Setsuhara

    Proc. 68th GEC/9th ICRP/33rd SPP   60 ( 9 )   2015年10月

     詳細を見る

    記述言語:英語  

  • Effects of Ambient Humidity on Plant Growth Enhancement by Atmospheric Air Plasma Irradiation to Plant Seeds 査読 国際誌

    T. Sarinont, T. Amano, K. Koga, S. Kitazaki, N. Hayashi, M. Shiratani

    Proc. 68th GEC/9th ICRP/33rd SPP   60 ( 9 )   2015年10月

     詳細を見る

    記述言語:英語  

  • Measurement of absolute density of N atom in sputtering plasma for epitaxial growth ZnO films via nitrogen mediated crystallization 査読 国際誌

    T. Ide, K. Matsushima, T. Takasaki, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M, Shiratani, N. Itagaki

    Proc. 68th GEC/9th ICRP/33rd SPP   60 ( 9 )   2015年10月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

  • Measurements of absolute densities of nitrogen and oxygen atoms in sputtering plasma for fabrication of ZnInON films 査読 国際誌

    K. Matsushima, T. Ide, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M, Shiratani, N. Itagaki

    Proc. 68th GEC/9th ICRP/33rd SPP   60 ( 9 )   2015年10月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

  • Measurements of nitrogen atom density in N2/Ar sputtering plasma for fabrication of high-mobility amorphous In2O3:Sn films 査読 国際誌

    T. Takasaki, T. Ide, K. Matsushima, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M, Shiratani, N. Itagaki

    Proc. 68th GEC/9th ICRP/33rd SPP   60 ( 9 )   2015年10月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

  • Fabrication of p-i-n solar cells utilizing ZnInON by RF magnetron sputtering 査読 国際誌

    K. Matsushima, R. Shimizu, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    Mat. Res. Soc. Symp. Proc.   1741   2015年3月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1557/opl.2015.248

  • ZnO-based semiconductors with tunable band gap for solar sell applications 招待 査読 国際誌

    N. Itagaki, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani

    Proc. SPIE photonics west 2015   9364   2015年3月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1117/12.2078114

  • Effects of morphology of buffer layers on ZnO/sapphire heteroepitaxial growth by RF magnetron sputtering 査読 国際誌

    T. Ide, K. Matsushima, R. Shimizu, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    Mat. Res. Soc. Symp. Proc.   1741   2015年2月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1557/opl.2015.87

  • Effects of Atmospheric Air Plasma Irradiation to Seeds of Radish Sprouts on Chlorophyll and Carotenoids Concentrations in their Leaves 査読 国際誌

    T. Sarinont, T. Amano, K. Koga, M. Shiratani, N. Hayashi

    Mat. Res. Soc. Symp. Proc.   1723   2015年2月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1557/opl.2015.39

  • Comparative Study on the Pulmonary Toxicity of Indium Hydroxide, Indium-Tin Oxide, and Indium Oxide Following Intratracheal Instillations into the Lungs of Rats 査読 国際誌

    A. Tanaka, M. Hirata, N. Matsumura, K. Koga, M. Shiratani, Y. Kiyohara

    Mat. Res. Soc. Symp. Proc.   1723   2015年2月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1557/opl.2015.21

  • Multigeneration Effects of Plasma Irradiation to Seeds of Arabidopsis Thaliana and Zinnia on Their Growth 査読 国際誌

    T. Sarinont, T. Amano, K. Koga, M. Shiratani, N. Hayashi

    Mat. Res. Soc. Symp. Proc.   1723   2015年1月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1557/opl.2015.12

  • 反応性微粒子プラズマプロセスを用いたゲルマニウム結晶ナノ粒子含有膜の堆積と量子ドット太陽電池への応用 査読

    内田儀一郎, 市田大樹, 徐鉉雄, 古閑一憲, 白谷正治

    スマートプロセス学会誌   4 ( 1 )   2015年1月

     詳細を見る

    記述言語:日本語  

  • SiC Nanoparticle Composite Anode for Li-Ion Batteries 査読 国際誌

    M. Shiratani, K. Kamataki, G. Uchida, K. Koga, H. Seo, N. Itagaki, T. Ishihara

    Mat. Res. Soc. Symp. Proc.   1678   2014年7月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1557/opl.2014.742

  • Plasma etching of single fine particle trapped in Ar plasma by optical tweezers 査読 国際誌

    T. Ito, K. Koga, D. Yamashita, K. Kamataki, N. Itagaki, G. Uchida and M. Shiratani

    J. Phys. : Conf. Series (SPSM26)   518 ( 1 )   2014年6月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1088/1742-6596/518/1/012014

  • Control of the area irradiated by the sheet-type plasma jet in atmospheric pressure 査読 国際誌

    T. Kawasaki, K. Kawano, H. Mizoguchi, Y. Yano, K. Yamashita, M. Sakai, G. Uchida, K. Koga, M. Shiratani

    J. Phys. : Conf. Series (SPSM26)   518 ( 1 )   2014年6月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1088/1742-6596/518/1/012016

  • Formation of carbon nanoparticle using Ar+CH4 high pressure nanosecond discharges 査読 国際誌

    K. Koga, X. Dong, S. Iwashita, U. Czarnetzki and M. Shiratani

    J. Phys. : Conf. Series (SPSM26)   518 ( 1 )   2014年6月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1088/1742-6596/518/1/012020

  • Growth enhancement effects of radish sprouts: atmospheric pressure plasma irradiation vs. heat shock 査読 国際誌

    T. Sarinont, T. Amano, S. Kitazaki, K. Koga, G. Uchida, M. Shiratani and N. Hayashi

    J. Phys. : Conf. Series (SPSM26)   518 ( 1 )   2014年6月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1088/1742-6596/518/1/012017

  • Contribution of H2 plasma etching to radial profile of amount of dust particles in a divertor simulator 査読 国際誌

    M. Tateishi, K. Koga, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura and A. Sagara, the LHD Experimental Group

    J. Phys. : Conf. Series (SPSM26)   518 ( 1 )   2014年6月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1088/1742-6596/518/1/012009

  • Contribution of ionic precursors to deposition rate of a-Si:H films fabricated by plasma CVD 査読 国際誌

    S. Toko, Y. Hashimoto, Y. Kanemitu, Y. Torigoe, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga and M. Shiratani

    J. Phys. : Conf. Series (SPSM26)   518 ( 1 )   2014年6月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1088/1742-6596/518/1/012008

  • Deposition of crystalline Ge nanoparticle films by high-pressure RF magnetron sputtering method 査読 国際誌

    D. Ichida, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga and M. Shiratani

    J. Phys. : Conf. Series (SPSM26)   518 ( 1 )   2014年6月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1088/1742-6596/518/1/012002

  • Effects of filter gap of cluster-eliminating filter on cluster eliminating efficiency 査読 国際誌

    Y. Hashimoto, S. Toko, D. Yamashita, H. Seo, K. Kamataki, N. Itagaki, K. Koga and M. Shiratani

    J. Phys. : Conf. Series (SPSM26)   518 ( 1 )   2014年6月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1088/1742-6596/518/1/012007

  • Emission spectroscopy of Ar + H-2+ C7H8 plasmas: C7H8 flow rate dependence and pressure dependence 査読 国際誌

    X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine and M. Hori

    J. Phys. : Conf. Series (SPSM26)   518 ( 1 )   2014年6月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1088/1742-6596/518/1/012010

  • Off-axis sputter deposition of ZnO films on c-sapphire substrates with buffer layers prepared via nitrogen-mediated crystallization 招待 査読 国際誌

    N. Itagaki, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani

    Proc. SPIE photonics west 2014   8987   2014年3月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1117/12.2041081

  • Effects of Atmospheric Air Plasma Irradiation on pH of Water 査読 国際誌

    T. Sarinont, K. Koga, S. Kitazaki, G. Uchida, N. Hayashi, M. Shiratani

    JPS Conf. Proc.   1   2014年3月

     詳細を見る

    記述言語:英語  

    DOI: 10.7566/JPSCP.1.015078

  • Pressure dependence of carbon film deposition using H-assisted plasma CVD 査読 国際誌

    X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, K. Takenaka, Y. Setsuhara, M. Sekine, M. Hori

    Proc. 8th Int. Conf. Reactive Plasmas   2014年2月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

  • Effects of growth enhancement by plasma irradiation to seeds in water 査読 国際誌

    T. Sarinont, K. Koga, S. Kitazaki, M. Shiratani, N. Hayashi

    Proc. 8th Int. Conf. Reactive Plasmas   2014年2月

     詳細を見る

    記述言語:英語  

  • Long term growth of radish sprouts after atmospheric pressure DBD plasma irradiation to seeds 査読 国際誌

    T. Amano, T. Sarinont, S. Kitazaki, N. Hayashi, K. Koga, M. Shiratani

    Proc. 8th Int. Conf. Reactive Plasmas   2014年2月

     詳細を見る

    記述言語:英語  

  • Multi-generation evaluation of plasma growth enhancement to arabidopsis thaliana (Invited) 招待 査読 国際誌

    K. Koga, T. Sarinont, S. Kitazaki, N. Hayashi, M. Shiratani

    Proc. 8th Int. Conf. Reactive Plasmas   2014年2月

     詳細を見る

    記述言語:英語  

  • Visualization of oxidizing substances generated by atmospheric pressure non-thermal plasma jet with water 査読 国際誌

    T. Kawasaki, K. Kawano, H. Mizoguchi, Y. Yano, K. Yamashita, M. Sakai, G. Uchida, K. Koga, M. Shiratani

    Proc. 8th Int. Conf. Reactive Plasmas   2014年2月

     詳細を見る

    記述言語:英語  

  • Growth control of ZnO nano-rod with various seeds and photovoltaic application 査読 国際誌

    H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    J. Phys. : Conference Series (11th APCPST)   441 ( 1 )   2013年6月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1088/1742-6596/441/1/012029

  • Control of nanoparticle formation in reactive plasmas and its application to fabrication of green energy devices 招待 査読 国際誌

    M. Shiratani, G. Uchida, K. Kamataki, H. Seo, N. Itagaki, K. Koga

    Proc. 13th International Conference on Plasma Surface Engineering   2 ( 26 )   2013年3月

     詳細を見る

    記述言語:英語  

  • Subacute pulmonary toxicity of copper indium gallium diselenide following intratracheal instillations into the lungs of rats 査読 国際誌

    A. Tanaka, M. Hirata, M. Shiratani, K. Koga, Y. Kiyohara

    Journal of Occupational Health   54 ( 3 )   2012年6月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1539/joh.11-0164-OA

  • The Optical Analysis and Application of Size-controllable Si Quantum Dots Fabricated by Multi-hollow Discharge Plasma Chemical Vapor Deposition 査読 国際誌

    H. Seo, Y. Wang, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Mat. Res. Soc. Symp. Proc.   1426   2012年4月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1557/opl.2012.890

  • Effects of Atmospheric Pressure Dielectric Barrier Discharge Plasma Irradiation on Yeast Growth 査読 国際誌

    S. Kitazaki, K. Koga, M. Shiratani, N. Hayashi

    Mat. Res. Soc. Symp. Proc.   1469   2012年4月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1557/opl.2012.969

  • Influence of Atmospheric Pressure Torch Plasma Irradiation on Plant Growth 査読 国際誌

    Y. Akiyoshi, N. Hayashi, S. Kitazaki, K. Koga and M. Shiratani

    Mat. Res. Soc. Symp. Proc.   1469   2012年4月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1557/opl.2012.970

  • Rapid Growth of Radish Sprouts Using Low Pressure O2 Radio Frequency Plasma Irradiation 査読 国際誌

    S. Kitazaki, K. Koga, M. Shiratani, N. Hayashi

    Mat. Res. Soc. Symp. Proc.   1469   2012年4月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1557/opl.2012.966

  • Characteristics of stable a-Si:H Schottoky cells fabricated by suppressing cluster deposition 査読 国際誌

    M. Shiratani, K. Hatozaki, Y. Hashimoto, Y. Kim, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga

    Mat. Res. Soc. Symp. Proc.   1426   2012年4月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1557/opl.2012.1245

  • In-situ Measurements of Cluster Volume Fraction in Silicon Thin Films Using Quartz Crystal Microbalances 査読 国際誌

    Y. Kim, K. Hatozaki, Y. Hashimoto, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Mat. Res. Soc. Symp. Proc.   1426   2012年4月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1557/opl.2012.839

  • Self-organized carbon Mk formation on the top surface of fine trenches using a low temperature plasma anisotropic CVD for depositing fine organic structure 国際誌

    K. Koga, T. Urakawa, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    Proc. Plasma Conf. 2011   2011年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

  • Influence of active oxygen species produced by atmospheric torch plasma on plant growth 査読 国際誌

    N. Hayashi, Y. Akiyoshi, S. Kitazaki, K. Koga, M. Shiratani

    Proc. Intern. Symp. on Dry Process   33   2011年11月

     詳細を見る

    記述言語:英語  

  • Optical emission spectroscopy of Ar+H2+ C7H8 discharges for anisotropic plasma CVD of carbon 査読 国際誌

    T. Urakawa, H. Matsuzaki, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    Proc. Intern. Symp. on Dry Process   33   2011年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

  • Quantum dot-sensitized solar cells using nitridated si nanoparticles produced by double multi-hollow discharges 査読 国際誌

    M. Sato, Y. Wang, K. Nakahara, T. Matsunaga, H. Seo, G. Uchida, K. Koga, M. Shiratani

    Proc. PVSEC-21   2011年11月

     詳細を見る

    記述言語:英語  

  • Stable schottky solar cells using cluster-free a-si:h prepared by multi-hollow discharge plasma CVD 査読 国際誌

    K. Hatozaki, K. Nakahara, G. Uchida, K. Koga, M. Shiratani

    Proc. PVSEC-21   2011年11月

     詳細を見る

    記述言語:英語  

  • Deposition of highly stable cluster-free a-Si:H films using fast gas flow multi-hollow discharge plasma CVD method 国際誌

    K. Hatozaki, K. Nakahara, T. Matsunaga, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    Proc. Plasma Conf. 2011   2011年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

  • Performance enhancement of Si quantum dot-sensitized solar cells by surface modification using ZnO barrier layer 国際誌

    Y. Wang, M. Sato, H. Seo, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    Proc. Intern. Symp. on Dry Process   33   2011年11月

     詳細を見る

    記述言語:英語  

  • Production Process of Carbon Nanotube Coagulates 国際誌

    T. Mieno, K. Koga, M. Shiratani

    Proc. Plasma Conf. 2011   2011年11月

     詳細を見る

    記述言語:英語  

  • Deposition of FeSi2 nano-particle film 国際誌

    M. Sato, Y. Wang, K. Nakahara, T. Matsunaga, H. Seo, G. Uchida, K. Koga and M. Shiratani

    Proc. Plasma Conf. 2011   2011年11月

     詳細を見る

    記述言語:英語  

  • Effects of substrate bias voltage on plasma anisotropic CVD of carbon using H-assisted plasma CVD reactor 国際誌

    T. Urakawa, H. Matsuzaki, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    Proc. Plasma Conf. 2011   2011年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

  • Growth promotion characteristics of bread yeast by atmospheric pressure dielectric barrier discharge plasma irradiation 国際誌

    S. Kitazaki, K. Koga, M. Shiratani, N. Hayashi

    Proc. Plasma Conf. 2011   2011年11月

     詳細を見る

    記述言語:英語  

  • Surface nitridation of silicon nano-particles using double multi-hollow discharge plasma CVD 査読 国際誌

    G. Uchida, K. Yamamoto, Y. Kawashima, M. Sato, K. Nakahara, K. Kamataki, N. Itagaki, K. Koga, M. Kondo, M. Shiratani

    Physica Status Solidi (c)   8 ( 10 )   2011年10月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1002/pssc.201001230

  • Deposition of cluster-free P-doped a-Si:H films using SiH4+PH3 multi-hollow discharge plasma CVD method 査読 国際誌

    K. Koga, K. Nakahara, Y. Kim, Y. Kawashima, T. Matsunaga, M. Sato, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, and M. Shiratani

    Physica Status Solidi (c)   8 ( 10 )   2011年10月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1002/pssc.201100229

  • Hybrid sensitized solar cells using Si nanoparticles and ruthenium dye 査読 国際誌

    G. Uchida, Y. Kawashima, K. Yamamoto, M. Sato, K. Nakahara, T. Matsunaga, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Kondo, M. Shiratani

    Physica Status Solidi (c)   8 ( 10 )   2011年10月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1002/pssc.201100166

  • Deposition profile control of carbon films on submicron wide trench substrate using H-assisted plasma CVD 国際誌

    T. Urakawa, T. Nomura, H. Matsuzaki, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    2011年7月

     詳細を見る

    記述言語:英語  

  • Generation and Surface Modification of Si nano-particles using SiH4/H2 and N2 multi-hollow discharges and their application to the third generation photovoltaics 招待 査読 国際誌

    K. Koga, G. Uchida, K. Yamamoto, Y. Kawashima, M. Sato, K. Kamataki, N. Itagaki, M. Shiratani

    International Conference on Advances in Condensed and Nano Materials (ICACNM)   1393   2011年2月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1063/1.3653600

  • マルチホロー放電プラズマCVDによる量子ドット増感太陽電池用シリコンナノ結晶粒子の作製

    内田儀一郎, 古閑一憲, 白谷正治

    ケミカルエンジニヤリング   55 ( 12 )   947 - 954   2010年12月

     詳細を見る

    記述言語:日本語  

  • Fluctuation Control for Plasma Nanotechnologies 査読 国際誌

    M. Shiratani, K. Koga, G. Uchida, N. Itagaki, K. Kamataki

    Proc. IEEE TENCON 2010   2010年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1109/TENCON.2010.5685920

  • Growth Stimulation of Radish Sprouts Using Discharge Plasma 査読 国際誌

    S. Kitazaki, D. Yamashita, H. Matsuzaki, G. Uchida, K. Koga, M. Shiratani

    Proc. IEEE TENCON 2010   2010年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1109/TENCON.2010.5686474

  • Photoluminescence of Si nanoparticles synthesized using multi-hollow discharge plasma CVD 査読 国際誌

    Y. Kawashima, K. Yamamoto, M. Sato, T. Matsunaga, K. Nakahara, D. Yamashita, H. Matsuzaki, G. Uchida, K. Koga, M. Shiratani

    Proc. IEEE TENCON 2010   2010年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1109/TENCON.2010.5686677

  • Redox Characteristics of Amino Acids Using Low Pressure Water Vapor RF Plasma 査読 国際誌

    Y. Akiyoshi, A. Nakahigashi, N. Hayashi, S. Kitazaki, Takuro Iwao, K. Koga, M. Shiratani

    Proc. IEEE TENCON 2010   2010年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1109/TENCON.2010.5686467

  • Substrate temperature dependence of feature profile of carbon films on substrate with submicron trenches 査読 国際誌

    T. Nomura, T. Urakawa, Y. Korenaga, D. Yamashita, H. Matsuzaki, K. Koga, M. Shiratani

    Proc. IEEE TENCON 2010   2010年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1109/TENCON.2010.5686688

  • Cluster-Free B-Doped a-Si:H Films Deposited Using SiH4 + B10H14 Multi-Hollow Discharges 査読 国際誌

    K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, K. Yamamoto, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    Proc. IEEE TENCON 2010   2010年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1109/TENCON.2010.5686686

  • Deposition profiles of microcrystalline silicon films using multi-hollow discharge plasma CVD 査読 国際誌

    T. Matsunaga, Y. Kawashima, K. Koga, K. Nakahara, W. M. Nakamura, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani

    Proc. IEEE TENCON 2010   2010年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1109/TENCON.2010.5686679

  • Effects of Amplitude Modulation of rf Discharge Voltage on Growth of Nano-Particles in Reactive Plasma 査読 国際誌

    K. Kamataki, H. Miyata, K. Koga, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani

    Proc. IEEE TENCON 2010   2010年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1109/TENCON.2010.5686456

  • Effects of Ar addition on breakdown voltage in a Si(CH3)2(OCH3)2 RF discharge 査読 国際誌

    G. Uchida, S. Nunomutra, H. Miyata, S. Iwashita, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Proc. IEEE TENCON 2010   2010年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1109/TENCON.2010.5686704

  • Deposition rate enhancement of cluster-free P-doped a-Si:H films using multi-hollow discharge plasma CVD method 国際誌

    K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, K. Yamamoto, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma   55 ( 7 )   2010年10月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

  • Plasma parameter measurements of Ar+H2+C7H8 plasma in H-assisted plasma CVD reactor 国際誌

    T. Nomura, T. Urakawa, Y. Korenaga, D. Yamashita, H. Matsuzaki, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma   55 ( 7 )   2010年10月

     詳細を見る

    記述言語:英語  

  • Redox Characteristics of Thiol of Plants Using Radicals Produced by RF Discharge 国際誌

    A. Nakahigashi, Y. Akiyoshi, N. Hayashi, S. Kitazaki, K. Koga, M. Shiratani

    Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma   55 ( 7 )   2010年10月

     詳細を見る

    記述言語:英語  

  • Combinatorial deposition of microcrystalline Si films using multi-hollow discharge plasma CVD 国際誌

    T. Matsunaga, Y. Kawashima, K. Koga, W. M. Nakamura, K. Nakahara, H. Matsuzaki, D. Yamashita, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani

    Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma   55 ( 7 )   2010年10月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

  • Quantum dot-sensitized solar cells using Si nanoparticles 査読 国際誌

    Y. Kawashima, K. Nakahara, H. Sato, K. Koga, M. Shiratani, M. Kondo

    35 ( 3 )   2010年9月

     詳細を見る

    記述言語:英語  

  • Si quantum dot-sensitized solar cells using Si nanoparticles produced by plasma CVD 査読 国際誌

    Y. Kawashima, K. Yamamoto, M. Sato, K. Nakahara, T. Matsunaga, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, M. Kondo

    Proc. 35th IEEE Photovoltaic Specialists Conf.   2010年7月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1109/PVSC.2010.5617205

  • Effects of hydrogen dilution on electron density in multi-hollow discharges with magnetic field for A-Si:H film deposition 査読 国際誌

    K. Koga, Y. Kawashima, K. Nakahara, T. Matsunaga, W. M. Nakamura, M. Shiratani

    Proc. 35th IEEE Photovoltaic Specialists Conf.   2010年7月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1109/PVSC.2010.5616502

  • Deposition of cluster-free P-doped a-Si:H films using a multi-hollow discharge plasma CVD method 査読 国際誌

    K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, K. Yamamoto, W. M. Nakamura, D. Yamashita, H. Matsuzaki, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Proc. 35th IEEE Photovoltaic Specialists Conf.   2010年7月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1109/PVSC.2010.5616514

  • Synthesis of crystalline Si nanoparticles for Quantum dots-sensitized solar cells using multi-hollow discharge plasma CVD 国際誌

    Y. Kawashima, K. Nakahara, H. Sato, K. Koga, M. Shiratani, M. Kondo

    Proc. of the 27th symposium on plasma processing   ( B5-05 )   2010年2月

     詳細を見る

    記述言語:英語  

  • Effects of gas residence time and H2 dilution on electron density in multi-hollow discharges of SiH4+ H2 国際誌

    K. Koga, H. Sato, Y. Kawashima, W. M. Nakamura, M. Shiratani

    Proc. of the 27th symposium on plasma processing   ( A5-06 )   2010年2月

     詳細を見る

    記述言語:英語  

  • In-situ Measurement of Production Process of Nanotube-Aggregates by the Laser-Mie Scattering (Dependence of Arc Condition and Gravity) 国際誌

    T. Mieno, GuoDong Tan, S. Usuba, K. Koga, M. Shiratani

    Proc. of the 27th symposium on plasma processing   ( P2-17 )   2010年2月

     詳細を見る

    記述言語:英語  

  • In-Situ Sampling of Dust Particles Produced Due to Interaction between Main Discharge Plasma and Inner Wall in LHD 国際誌

    H. Miyata, S. Iwashita, YasuY. Yamada, K. Koga, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, LHD Experimental Group

    Proc. of the 27th symposium on plasma processing   ( P1-14 )   2010年2月

     詳細を見る

    記述言語:英語  

  • Measurement of electron density in multi-hollow discharges with magnetic field 国際誌

    H. Sato, Y. Kawashima, K. Nakahara, K. Koga, M. Shiratani

    Proc. of the 27th symposium on plasma processing   ( A6-01 )   2010年2月

     詳細を見る

    記述言語:英語  

  • Observation of nano-particle transport in capacitively coupled radio frequency discharge plasma 国際誌

    S. Iwashita, H. Miyata, YasuY. Yamada, H. Matsuzaki, K. Koga, M. Shiratani

    Proc. of the 27th symposium on plasma processing   ( P1-13 )   2010年2月

     詳細を見る

    記述言語:英語  

  • Control of deposition profile of hard carbon films on trenched substrates using H-assisted plasma CVD reactor 国際誌

    T. Nomura, Y. Korenaga, H. Matsuzaki, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    Proc. of the 27th symposium on plasma processing   ( P1-39 )   2010年2月

     詳細を見る

    記述言語:英語  

  • Substrate temperature dependence of deposition profile of plasma CVD carbon films in trenches 査読 国際誌

    J. Umetsu, K. Inoue, T. Nomura, H. Matsuzaki, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    J. Plasma Fusion Res.   8   2009年9月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  • Dust Particles formed owing to interactions between H2 or D2 helicon plasma, graphite 国際誌

    H. Miyata, S. Iwashita, YasuY. Yamada, K. Koga, M. Shiratani

    Proc. of 2009 International Symposium on Dry Process   2009年9月

     詳細を見る

    記述言語:英語  

  • Measurements of electron density in SiH4+H2 multi-hollow discharges using a frequency shift probe 国際誌

    K. Nakahara, Y. Kawashima, H. Sato, K. Koga, M. Shiratani

    Proc. of 2009 International Symposium on Dry Process   2009年9月

     詳細を見る

    記述言語:英語  

  • Measurements of Surface Temperature of a-Si:H Films in Silane Multi-Hollow Discharge with IR Thermometer 国際誌

    H. Sato, Y. Kawashima, K. Koga, M. Shiratani

    Proc. of 2009 International Symposium on Dry Process   2009年9月

     詳細を見る

    記述言語:英語  

  • Porosity Control of Nano-Particle Composite Porous Low Dielectric Films using Pulse RF Discharges with Amplitude Modulation 国際誌

    S. Iwashita, H. Miyata, K. Koga, H. Matsuzaki, M. Shiratani, M. Akiyama

    Proc. of 2009 International Symposium on Dry Process   2009年9月

     詳細を見る

    記述言語:英語  

  • Pressure, aspect ratio dependence of deposition profile of carbon films on trench substrates deposited by plasma CVD 国際誌

    T. Nomura, Y. Korenaga, J. Umetsu, H. Matsuzaki, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    Proc. of 2009 International Symposium on Dry Process   2009年9月

     詳細を見る

    記述言語:英語  

  • Synthesis of Si nanoparticles for multiple exciton generation solar cells using multi-hollow discharge plasma CVD 国際誌

    Y. Kawashima, H. Sato, K. Koga, M. Shiratani, M. Kondo

    Proc. of 2009 International Symposium on Dry Process   2009年9月

     詳細を見る

    記述言語:英語  

  • Toward plasma nano-factories 国際誌

    M. Shiratani, K. Koga

    Proc. of 2nd International Conference on Advanced Plasma Technologies (iCAPT-II) with 1st International Plasma Nanoscience Symposium (iPlasmaNano-I)   2009年9月

     詳細を見る

    記述言語:英語  

  • A comparison of dust particles produced due to interaction between graphite and plasma: LHD vs helicon discharges 査読 国際誌

    S. Iwashita, H. Miyata, K. Koga, M. Shiratani, N. Ashikawa, K. Nishimura, A. Sagara, the LHD experimental group

    J. Plasma Fusion Res.   8   2009年9月

     詳細を見る

    記述言語:英語  

  • Control of Three Dimensional Transport of Nano-blocks by Amplitude Modulated Pulse RF Discharges using an Electrode with Needles 査読 国際誌

    S. Iwashita, H. Miyata, H. Matsuzaki, K. Koga, M. Shiratani

    J. Plasma Fusion Res.   8   2009年9月

     詳細を見る

    記述言語:英語  

  • Dependence of volume fraction of clusters on deposition rate of a-Si:H films deposited using a multi-hollow discharge plasma CVD method 査読 国際誌

    H. Sato, Y. Kawashima, M. Tanaka, K. Koga, W. M. Nakamura, M. Shiratani

    J. Plasma Fusion Res.   8   2009年9月

     詳細を見る

    記述言語:英語  

  • Detection of nano-particles formed in cvd plasma using a two-dimensional photon-counting laser-light-scattering method 査読 国際誌

    H. Miyahara, S. Iwashita, H. Miyata, H. Matsuzaki, K. Koga, M. Shiratani

    J. Plasma Fusion Res.   8   2009年9月

     詳細を見る

    記述言語:英語  

  • Optical Emission Spectroscopy of a Magnetically Enhanced Multi-hollow Discharge Plasma for a-Si:H Deposition 査読 国際誌

    W. M. Nakamura, Y. Kawashima, M. Tanaka, H. Sato, J. Umetsu, H. Miyahara, H. Matsuzaki, K. Koga, M. Shiratani

    J. Plasma Fusion Res.   8   2009年9月

     詳細を見る

    記述言語:英語  

  • Plasma CVD of Nano-particle Composite Porous SiOCH Films 国際誌

    M. Shiratani, S. Iwashita, H. Miyata, K. Koga, H. Matsuzaki, M. Akiyama

    Proc. of 19th International Symposium on Plasma Chemistry   2009年7月

     詳細を見る

    記述言語:英語  

  • Characterization of Dust Particles Ranging in Size from 1 nm to 10 µm Collected in the LHD 査読 国際誌

    4   34 - 34   2009年4月

     詳細を見る

    記述言語:英語  

    We collected dust particles ranging in size from 1 nm to 10 µm from the Large Helical Device employing two methods: an ex-situ filtered vacuum collection method and an in-situ dust collection method. The size distribution from 1 nm to 10 µm is well expressed by the Junge distribution. Dust particles are classified into three kinds: small spherical dust particles below 1 µm in size, agglomerates consisting of primary particles of 10 nm, and large dust particles above 1 µm in size and irregular in shape; this suggests three formation mechanisms of dust particles: chemical vapor deposition growth, agglomeration, and peeling from walls. In-situ collection shows that agglomeration between dust particles takes place in main discharges. The primary dust particles in agglomerates are around 10 nm in size, suggesting agglomeration between a negatively charged large agglomerate and a positively charged dust particle 10 nm in size. We have also confirmed the important fact that a large number of dust particles move during vacuum vent. Therefore, the in-situ dust collection method is needed to reveal the generation-time and -processes of dust particles and their deposition position during discharges.

    DOI: 10.1585/pfr.4.034

  • Nano-block manipulation using pulse RF discharges with amplitude modulation combined with a needle electrode

    S. Iwashita, H. Miyata, H. Matsuzaki, K. Koga, M. Shiratani

    Proc. of PSS2009/SPP26   2009年2月

     詳細を見る

    記述言語:英語  

  • Characteristics of dust particles produced due to interaction between hydrogen plasma, graphite

    S. Iwashita, H. Miyata, K. Koga, M. Shiratani, N. Ashikawa, A. Sagara, K. Nisimura

    Proc. of PSS2009/SPP26   2009年2月

     詳細を見る

    記述言語:英語  

  • Conductivity of nc-Si films depsited using multi-hollow discharge plasma CVD method

    K. Koga, Y. Kawashima, W. M. Nakamura, H. Sato, M. Tanaka, M. Shiratani, M. Kondo

    Proc. of PSS2009/SPP26   2009年2月

     詳細を見る

    記述言語:英語  

  • Deposition profile of toluene plasma CVD carbon films in trenches

    J. Umetsu, K. Inoue, T. Nomura, H. Matsuzaki, K. Koga, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    Proc. of PSS2009/SPP26   2009年2月

     詳細を見る

    記述言語:英語  

  • Effects of magnetic fields on multi-hollow discharges for thin film silicon solar cells

    Nakamura W. M., Sato H., Koga K., Shiratani M.

    Proc. of PSS2009/SPP26   2009年2月

     詳細を見る

    記述言語:英語  

  • High Rate Deposition of a-Si:H Depositied using a Low Gas Pressure Multi-hollow Discharge Plasma CVD Method

    K. Koga, W. M. Nakamura, H. Sato, M. Tanaka, H. Miyahara, M. Shiratani

    Proc. of PSS2009/SPP26   2009年2月

     詳細を見る

    記述言語:英語  

  • Plasma CVD of Nano-particle Composite Porous Films of k=1.4-2.9, Young’s Modulus above 10 GPa 査読 国際誌

    2008年12月

     詳細を見る

    記述言語:英語  

  • Deposition profile of plasma CVD carbon films in trenches 査読 国際誌

    J. Umetsu, K. Inoue, T. Nomura, H. Matsuzaki, K. Koga, Y. Setsuhara, M. Shiratani, M. Sekine, M. Hori

    Proc. of 30th International Symposium on Dry Process   2008年12月

     詳細を見る

    記述言語:英語  

  • Rapid transport of nano-particles in amplitude modulated rf discharges for depositing porous ultra-low-k films 査読 国際誌

    S. Iwashita, K. Koga, M. Morita, M. Shiratani

    J. Phys. : Conference Series   100 ( 6 )   2008年8月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1088/1742-6596/100/6/062006

  • Cluster incorporation control for a-Si:H film deposition 査読 国際誌

    W. M. Nakamura, K. Koga, H. Miyahara, M. Shiratani

    J. Phys. : Conference Series   100 ( 8 )   2008年8月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1088/1742-6596/100/8/082018

  • Optical emission spectroscopic study on H-assisted plasma for anisotropic deposition of Cu films 査読 国際誌

    J. Umetsu, K. Koga, K. Inoue, M. Shiratani

    J. Phys. : Conference Series   100 ( 6 )   2008年8月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1088/1742-6596/100/6/062007

  • Nanoparticle-Suppressed Plasma CVD for Depositing Stable a-Si:H Films 査読 国際誌

    M. Shiratani, W. M. Nakamura, H. Miyahara, K. Koga

    Digest of Technical Papers of the Fifteenth International Workshop on Active-Matrix Flatpanel Displays, Devices (AM-FPD 08)   2008年7月

     詳細を見る

    記述言語:英語  

  • Rapid transport of nano-particles having a fractional elemental charge on average in capacitively coupled rf discharges by amplitude modulating discharge voltage 招待 査読 国際誌

    M. Shiratani, S. Iwashita, K. Koga, S. Nunomura

    Faraday Discussions   137   2008年1月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1039/B704910B

  • VHF discharge sustained in a small hole 査読 国際誌

    K. Koga, W. M. Nakamura, and M. Shiratani

    Proc. 28th Intern. Conf. on Phenomena in Ionized Gases   2007年7月

     詳細を見る

    記述言語:英語  

  • Transport of nano-particles in pulsed AM RF discharges

    S. Iwashita, K. Koga, M. Shiratani

    Proc. the 24th Symp. on Plasma Processing   2007年1月

     詳細を見る

    記述言語:英語  

  • In-situ sampling of dust generated in LHD and its analysis

    M. Shiratani, S. Kiridoshi, K. Koga, S. Iwashita, N. Ashikawa, K. NIshimura, A. Sagara, A. Komori, LHD Experimental Group

    Proc. the 24th Symp. on Plasma Processing   2007年1月

     詳細を見る

    記述言語:英語  

  • Stability of a-Si:H deposited using multi-hollow plasma CVD

    K. Koga, W. M. Nakamura, D. Shimokawa, M. Shiratani

    Proc. the 24th Symp. on Plasma Processing   2007年1月

     詳細を見る

    記述言語:英語  

  • Fabrication of nanoparticle composite porous films having ultra-low dielectric constant 査読 国際誌

    S. Nunomura, K. Koga, M. Shiratani, Y. Watanabe, Y. Morisada, N. Matsuki, and S. Ikeda

    Jpn. J. Appl. Phys.   44 ( 50 )   2005年12月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1143/JJAP.44.L1509

  • Highly stable a-Si:H films deposited by using multi-hollow plasma chemical vapor deposition 査読 国際誌

    K. Koga, T. Inoue, K. Bando, S. Iwashita, M. Shiratani, and Y. Watanabe

    Jpn. J. Appl. Phys.   44 ( 48 )   2005年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1143/JJAP.44.L1430

  • Production of crystalline Si nano-particles using VHF discharges and their properties 査読 国際誌

    M. Shiratani, T. Kakeya, K. Koga, Y. Watanabe, and M. Kondo

    30 ( 1 )   2005年3月

     詳細を見る

    記述言語:英語  

  • Preparation of high-quality a-Si:H using cluster-suppressed plasma CVD method and its prospects 招待 査読 国際誌

    Y. Watanabe, M. Shiratani, K. Koga

    30 ( 1 )   2005年3月

     詳細を見る

    記述言語:英語  

  • Carbon particle formation due to interaction between H2 plasma and carbon fiber composite wall 査読 国際誌

    K. Koga, R. Uehara, Y. Kitaura, M. Shiratani, Y. Watanabe, A. Komori

    IEEE Trans. Plasma Science   32 ( 2 )   2004年2月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1109/TPS.2004.828129

  • Effects of Excitation Frequency and H2 Dilution on Cluster Generation in Silane High-Frequency Discharges 査読 国際誌

    M. Shiratani, K. Koga, A. Harikai, T. Ogata, and Y. Watanabe

    MRS Symp. Proc.   762   2003年4月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1557/PROC-762-A9.5

  • シランプラズマ中のクラスタ成長と薄膜形成

    白谷正治, 古閑一憲, 尾形隆則, 掛谷知秀, 鹿口直斗, 渡辺征夫

    信学技報   103 ( 6 )   2003年4月

     詳細を見る

    記述言語:日本語   掲載種別:研究論文(学術雑誌)  

  • Anisotropic Plasma Chemical Vapor Deposition of Copper Films in Trenches 査読 国際誌

    K. Takenaka, M. Onishi, M. Takeshita, T. Kinoshita, K. Koga, M. Shiratani, and Y. Watanabe

    MRS Symp. Proc.   766   2003年4月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1557/PROC-766-E3.8

  • Anisotropic Deposition of Copper by H-Assisted Plasma Chemical Vapor Deposition 査読 国際誌

    K. Takenaka, M. Shiratani, M. Onishi, M. Takeshita, T. Kinoshita, K. Koga, and Y. Watanabe

    Matr. Sci. Semiconductor Processing   5 ( 2 )   2003年2月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/S1369-8001(02)00108-7

  • ナノクラスタ制御プラズマCVDと高品質,光安定a-Si:H太陽電池への応用

    白谷正治, 古閑一憲, 渡辺征夫

    アモルファスセミナーテキスト   2002年11月

     詳細を見る

    記述言語:日本語  

  • Formation of nano-particles in microgravity plasma 査読 国際誌

    M. Shiratani, K. Koga, Y. Watanabe

    Journal of Japan Society of Microgravity Application   19   2002年10月

     詳細を見る

    記述言語:英語  

  • Anisotropic deposition of copper by plasma CVD method 国際誌

    K. Takenaka, M. Onishi, M. Takenaka, T. Kinoshita, K. Koga, M. Shiratani, Y. Watanabe

    Proc. Intern. Symp. on Dry Process   2002年10月

     詳細を見る

    記述言語:英語  

  • Nucleation and subsequent growth of clusters in reactive plasma (invited lecture paper) 査読 国際誌

    Y. Watanabe, M. Shiratani, K. Koga

    Plasma Sources Sci. Technol.   11   2002年8月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1088/0963-0252/11/3A/334

  • Correlation between Si cluster amount in silane HF discharges and quality of a-Si:H films 国際誌

    M. Shiratani, M. Kai, K. Imabeppu, K. Koga, Y. Watanabe

    Proc. ESCANPIG16/ICRP5 Joint Meeting   2002年7月

     詳細を見る

    記述言語:英語  

  • Anisotropic deposition of Cu with H-assisted plasma CVD 国際誌

    K. Takenaka, H. J. Jin, M. Onishi, K. Koga, M. Shiratani, Y. Watanabe

    Proc. ESCANPIG16/ICRP5 Joint Meeting   2002年7月

     詳細を見る

    記述言語:英語  

  • Conformal deposition of pure Cu films in trenches by H-assisted plasma CVD using Cu(EDMDD)2 国際誌

    K. Takenaka, H. J. Jin, M. Onishi, K. Koga, M. Shiratani, Y. Watanabe, T. Shingen

    Proc. ESCANPIG16/ICRP5 Joint Meeting   2002年7月

     詳細を見る

    記述言語:英語  

  • Suppression methods of cluster growth in silane discharges and their application to deposition of super high quality a-Si:H films 国際誌

    K. Koga, K. Imabeppu, M. Kai, A. Harikai, M. Shiratani, Y. Watanabe

    Proc. Intern. Workshop on Information and Electrical Engineering (IWIE2002)   2002年5月

     詳細を見る

    記述言語:英語  

  • Deposition of Cu films in trenches for LIS interconnects by H-assisted plasma CVD method 国際誌

    K. Takenaka, M. Onishi, T. Kinoshita, K. Koga, M. Shiratani, Y. Watanabe, T. Shingen

    Proc. Intern. Workshop on Information and Electrical Engineering (IWIE2002)   2002年5月

     詳細を見る

    記述言語:英語  

  • Clustering phenomena in low-pressure reactive plasma: basis and applications (invited lecture paper) 査読 国際誌

    Y. Watanabe, A. Harikai, K. Koga, M. Shiratani

    Pure Appl. Chem.   74 ( 3 )   2002年3月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1351/pac200274030483

  • In-situ measurement of size and density of particles in sub-nm to nm size range 国際誌

    K. Koga, M. Shiratani, Y. Watanabe

    Proc. Nano-technology Workshop   2002年2月

     詳細を見る

    記述言語:英語  

  • Deposition of high-quality Si films by suppressing cluster growth in SiH4 high-frequency discharges 国際誌

    M. Shiratani, K. Koga, Y. Watanabe

    Proc. Nano-technology Workshop   2002年2月

     詳細を見る

    記述言語:英語  

  • プロセスプラズマ中のクラスタ - アモルファスシリコン太陽電池製造用プラズマ中のクラスター 査読

    白谷正治, 古閑一憲, 渡辺征夫

    ( 5 )   2002年1月

     詳細を見る

    記述言語:日本語  

  • クラスタ制御プラズマCVD法によるSi薄膜の高品質化

    渡辺征夫, 古閑一憲, 白谷正治

    シリコンテクノロジー   ( 37 )   2002年1月

     詳細を見る

    記述言語:日本語  

  • Deposition of pure copper thin films by H-assisted plasma CVD using a new Cu complex Cu(EDMDD)2 国際誌

    K. Takenaka, H. J. Jin, M. Onishi, K. Koga, M. Shiratani, Y. Watanabe

    Proc. Intern. Symp. on Dry Process   2001年11月

     詳細を見る

    記述言語:英語  

  • Cluster-less plasma CVD reactor and its application to a-Si:H film deposition 査読 国際誌

    M. Shiratani, K. Koga, Y. Watanabe

    Mat. Res. Soc. Symp. Proc.   2001年7月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1557/PROC-664-A5.6

  • Behavior of a particle injected in ion sheath of electropositive and electronegative gas discharges 国際誌

    M. Shiratani, A. Toyozawa, K. Koga, Y. Watanabe

    Proc. Intern. Conf. on Phenomena in Ionized Gases   2001年7月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

  • Clustering phenomena in low-pressure reactive plasma: base and applications (invited) 国際誌

    Y. Watanabe, M. Shiratani, K. Koga

    Proc. Intern. Symp. on Plasma Chemistry   2001年7月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

  • Deposition of super high quality a-Si:H thin films using cluster-suppressed plasma CVD reactor 国際誌

    K. Koga, T. Sonoda, N. Shikatani, M. Shiratani, Y. Watanabe

    Proc. Intern. Conf. on Phenomena in Ionized Gases   2001年7月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

  • Development of H-assisted plasma CVD reactor for Cu interconnects 国際誌

    M. Shiratani, H. J. Jin, K. Takenaka, K. Koga, T. Kinoshita, Y. Watanabe

    Proc. Intern. Conf. on Phenomena in Ionized Gases   2001年7月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

  • Nucleation and subsequent growth of clusters in reactive plasma (invited) 国際誌

    Y. Watanabe, M. Shiratani, K. Koga

    Proc. Intern. Conf. on Phenomena in Ionized Gases   2001年7月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

  • Formation kinetics and control of dust particles in capacitively-coupled reactive plasma (invited) 査読 国際誌

    Y. Watanabe, M. Shiratani, K. Koga

    Phys. Scripta   T89   2001年1月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1238/Physica.Topical.089a00029

  • Behavior of a particle injected in ion sheath 国際誌

    M. Shiratani, A. Toyozawa, K. Koga, Y. Watanabe

    Proc. of Plasma Science Symp. 2001/ 18th Symp. on Plasma Processing   2001年1月

     詳細を見る

    記述言語:英語  

  • Development of cluster-suppressed plasma CVD reactor for high quality a-Si:H film deposition 国際誌

    M. Shiratani, T. Sonoda, N. Shikatani, K. Koga, Y. Watanabe

    Proc. of Plasma Science Symp. 2001/ 18th Symp. on Plasma Processing   2001年1月

     詳細を見る

    記述言語:英語  

  • Effects of H2 dilution and excitation frequency on initial growth of clusters in silane plasma 国際誌

    K. Koga, K. Tanaka, M. Shiratani, Y. Watanabe

    Proc. Plasma Science Symp. 2001/ 18th Symp. on Plasma Processing   2001年1月

     詳細を見る

    記述言語:英語  

  • H assisted control of quality and conformality in Cu film deposition using plasma CVD method 国際誌

    M. Shiratani, H. J. Jin, K. Takenaka, K. Koga, T. Kinoshita, Y. Watanabe

    Proc. Advanced Metallization Conf. 2000   2001年1月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

  • Measurements of surface reaction probability of SiH3 国際誌

    M. Shiratani, N. Shiraishi, K. Koga, Y. Watanabe

    Proc. of Plasma Science Symp. 2001/ 18th Symp. on Plasma Processing   2001年1月

     詳細を見る

    記述言語:英語  

  • Plasma CVD method for Cu interconnects in ULSI (invited) 国際誌

    M. Shiratani, K. Koga, Y. Watanabe

    Proc. of Plasma Science Symp. 2001/ 18th Symp. on Plasma Processing   2001年1月

     詳細を見る

    記述言語:英語  

  • Methods of suppressing cluster growth in silane rf discharges 査読 国際誌

    M. Shiratani, S. Maeda, Y. Matsuoka, K. Tanaka, K. Koga, Y. Watanabe

    Mat. Res. Soc. Symp. Proc.   2000年7月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1557/PROC-609-A5.6

  • Deposition of smooth thin Cu films in deep submicron trench by plasma CVD reactor with H atom source 査読 国際誌

    H. J. Jin, M. Shiratani, Y. Nakatake, K. Koga, T. Kinoshita, Y. Watanabe

    Mat. Res. Soc. Symp. Proc.   2000年7月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1557/PROC-612-D9.2.1

  • Propagation characteristics of ion acoustic waves in an Ar/SF6 plasma 査読 国際誌

    R. Ichiki, M. Shindo, S. Yoshimura, K. Koga, Y. Kawai

    J. Phys. Soc. Jpn.   69 ( 6 )   2000年6月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1143/JPSJ.69.1925

  • Filling subquater-micron trench structure with high-purity copper using plasma reactor with H atom source 査読

    H. J. Jin, M. Shiratani, Y. Nakatake, K. Koga, T. Kinoshita, Y. Watanabe

    Res. Rep. ISEE Kyushu Univ.   5 ( 1 )   2000年3月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  • Growth processes of particles up to nanometer size in high-frequency SiH4 plasma 査読 国際誌

    Y. Watanabe, M. Shiratani, T. Fukuzawa, K. Koga

    Jour. Technical Phys.   41 ( 1 )   2000年1月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  • Observation of Asymmetric Sheath Structure in Multi-Component Plasma Containing Negative Ions 査読 国際誌

    K. Koga, H. Naitou, Y. Kawai

    J. Plasma Fusion Res.   2   1999年12月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

  • Observation of Local Structures in Asymmetric Ion Sheath 査読 国際誌

    K. Koga, H. Naitou, Y. Kawai

    J. Phys. Soc. Jpn.   68 ( 5 )   1999年5月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1143/JPSJ.68.1578

  • Behavior of the Ion Sheath Instability in a Negative Ion Plasma 査読 国際誌

    K. Koga, Y. Kawai

    Jpn. J. Appl. Phys.   38 ( 3A )   1999年3月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1143/JJAP.38.1553

  • Capture and Conversion of CO2 from Ambient Air Using Ionic Liquid-Plasma Combination

    Sukma Wahyu Fitriani, Takamasa Okumura, Kunihiro Kamataki, Kazunori Koga, Masaharu Shiratani, Pankaj Attri

    Plasma Chemistry and Plasma Processing   2024年8月   ISSN:0272-4324 eISSN:1572-8986

     詳細を見る

    掲載種別:研究論文(学術雑誌)   出版者・発行元:Springer Science and Business Media LLC  

    DOI: 10.1007/s11090-024-10500-9

    researchmap

    その他リンク: https://link.springer.com/article/10.1007/s11090-024-10500-9/fulltext.html

  • Capture and Conversion of CO<sub>2</sub> from Ambient Air Using Ionic Liquid-Plasma Combination

    Fitriani, SW; Okumura, T; Kamataki, K; Koga, K; Shiratani, M; Attri, P

    PLASMA CHEMISTRY AND PLASMA PROCESSING   2024年8月   ISSN:0272-4324 eISSN:1572-8986

  • Effects of Supplied Gas on Plasma-Induced Liquid Flows

    Shen, KC; Shi, HP; Koga, K; Shiratani, M; Kawasaki, T

    IEEE TRANSACTIONS ON PLASMA SCIENCE   2024年8月   ISSN:0093-3813 eISSN:1939-9375

  • Dry Process 2023

    Koga, K

    JAPANESE JOURNAL OF APPLIED PHYSICS   63 ( 8 )   2024年8月   ISSN:0021-4922 eISSN:1347-4065

     詳細を見る

    出版者・発行元:Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers  

    DOI: 10.35848/1347-4065/ad5d78

    Web of Science

    Scopus

  • Fundamental Study on Novel Biological Indicator Using DNA-Labeled Microbeads for Evaluating Nonthermal Plasma Sterilization

    Nakano, M; Okumura, T; Inaba, M; Attri, P; Koga, K; Shiratani, M; Suehiro, J

    IEEE SENSORS LETTERS   8 ( 8 )   2024年8月   ISSN:2475-1472

     詳細を見る

    出版者・発行元:IEEE Sensors Letters  

    Nonthermal atmospheric-pressure discharge plasma is considered important for sterilization. Reactive species, such as active oxygen species, radicals, and nitrate ions, generated by the discharge plasma damage the target bacterial cell wall/membrane and DNA. Several plasma sterilization methods have been proposed, including dielectric barrier discharge (DBD). To achieve effective sterilization, it is necessary to evaluate their characteristics using many parameters. This letter aims to demonstrate a proof-of-concept of a novel biological indicator for plasma sterilization. A biological indicator is used to verify sterilization outcomes. We employ DNA-labeled microbeads as biological indicators for the rapid visualization of plasma sterilization. This is based on our recently developed method for visual detection of DNA molecules. If plasma-derived factors cause the degradation of the DNA attached to the microbeads, this can be confirmed by visualization. Herein, we present the correlation between sterilization and visualization in the case of DBD. This method offers a rapid evaluation of plasma sterilization because it easily and quickly determines the sterilization capability of the plasma.

    DOI: 10.1109/LSENS.2024.3420437

    Web of Science

    Scopus

  • Effect of nanoscale inhomogeneity on blocking temperature of ZnO:Co films fabricated by using nitrogen-mediated crystallization

    Agusutrisno, MN; Okumura, T; Kamataki, K; Itagaki, N; Koga, K; Shiratani, M; Yamashita, N

    MRS ADVANCES   2024年7月   ISSN:2731-5894 eISSN:2059-8521

     詳細を見る

    掲載種別:研究論文(学術雑誌)   出版者・発行元:MRS Advances  

    Diluted magnetic semiconductors (DMS) have attracted interest for the potential applications of spintronic devices. The origin of the temperature dependence of their ferromagnetism has been debated and has not been concluded yet. A potential conclusion is that nanoscale inhomogeneity largely affects the temperature dependence of the magnetization in DMS even if the structure and compositions are not largely different. We examined this hypothesis by implementing nitrogen-mediated crystallization consisting of sputtering deposition of amorphous film and solid-phase crystallization by thermal annealing. A series of samples with different inhomogeneities were prepared by changing the annealing time. No significant changes in the composition and the structure were observed after annealing for various times, while significant enhancements were observed in the coercivity, blocking temperature, and grain size. These results provide clear understanding in the temperature dependence of the ferromagnetism in DMS and direct evidence of the potential conclusion on the long-lasting debate. Graphical abstract: (Figure presented.)

    DOI: 10.1557/s43580-024-00907-z

    Web of Science

    Scopus

    researchmap

    その他リンク: https://link.springer.com/article/10.1557/s43580-024-00907-z/fulltext.html

  • Deposition of hydrogenated amorphous carbon films by CH<sub>4</sub>/Ar capacitively coupled plasma using tailored voltage waveform discharges

    Otaka, M; Otomo, H; Ikeda, K; Lai, JS; Wakita, D; Kamataki, K; Koga, K; Shiratani, M; Nagamatsu, D; Shindo, T; Matsudo, T

    JAPANESE JOURNAL OF APPLIED PHYSICS   63 ( 7 )   2024年7月   ISSN:0021-4922 eISSN:1347-4065

     詳細を見る

    出版者・発行元:Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers  

    We investigated the effects of tailored voltage waveform (TVW) discharges on the deposition of hydrogenated amorphous carbon (a-C:H) films in CH4/Ar capacitively coupled plasma. TVW discharges employ two driving radio frequencies (13.56 MHz and 27.12 MHz) and control their phase shifts to independently regulate ion bombardment energy (IBE) and ion flux. In this study, a-C:H films were deposited by changing DC-self bias with phase shift and constant applied voltage peak-to-peak. Additionally, we investigated phase-resolved optical emission spectroscopy (PROES) for plasma characterization. As a result, plasma-enhanced CVD (PECVD) for a-C:H films using TVW discharges realize control of film properties such as mass density, sp3 fraction, and H content, while keeping the deposition rate constant. Thus, it is suggested that TVW discharges realize the independent control of IBE and ion flux with high accuracy, highlighting its utility in a-C:H film depositions.

    DOI: 10.35848/1347-4065/ad53b0

    Web of Science

    Scopus

  • Large-scale fabrication of thulium iron garnet film with perpendicular magnetic anisotropy using RF magnetron sputtering

    Agusutrisno, MN; Obinata, S; Okumura, T; Kamataki, K; Itagaki, N; Koga, K; Shiratani, M; Yamashita, N

    JAPANESE JOURNAL OF APPLIED PHYSICS   63 ( 7 )   07SP06 - 07SP06   2024年7月   ISSN:0021-4922 eISSN:1347-4065

     詳細を見る

    掲載種別:研究論文(学術雑誌)   出版者・発行元:Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers  

    Large-scale fabrication of thulium iron garnet (TmIG) films on gadolinium gallium garnet (GGG) substrates, with a total area of 25 cm2, has been demonstrated by rotating substrate holders during on-axis sputtering. By optimizing the growth parameters based on the pressure and flow rate of the oxygen ratio, a Tm/Fe ratio of 0.65 was obtained, which is close to the stoichiometry of TmIG. The increase in post-annealing temperature has induced the growth of the TmIG structure by the strain of the lattice constant mechanism. At the highest post-annealing temperature, the crystal structure of TmIG (444) and the perpendicular magnetic anisotropy (PMA) were obtained. This result demonstrates the potential method for large-scale fabrication of TmIG film with PMA.

    DOI: 10.35848/1347-4065/ad5aff

    Web of Science

    Scopus

    researchmap

    その他リンク: https://iopscience.iop.org/article/10.35848/1347-4065/ad5aff/pdf

  • Sputtering deposition of dense and low-resistive amorphous In<sub>2</sub>O<sub>3</sub>: Sn films under ZONE-T conditions of Thornton's structural diagram

    Wada, Y; Magdy, W; Takeda, K; Mido, Y; Yamashita, N; Okumura, T; Kamataki, K; Koga, K; Hori, M; Shiratani, M; Itagaki, N

    APPLIED PHYSICS LETTERS   124 ( 24 )   2024年6月   ISSN:0003-6951 eISSN:1077-3118

     詳細を見る

    掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Physics Letters  

    We have fabricated smooth-surfaced amorphous In2O3:Sn (a-ITO) films at a high temperature of 550 °C, far above the typical crystallization threshold of 150 °C for ITO films. This achievement has been made possible by intentionally introducing N2 into the sputtering atmosphere, which maintains a low N atom incorporation of only a few atomic percent within the films. Positioned within ZONE-T of the Thornton diagram (higher-temperature region characterized by high film density), our method allows the preparation of films with superior film density about 6.96 g/cm3, substantially exceeding the density of 6.58 g/cm3 for conventional a-ITO films fabricated under ZONE-1 (low-temperature region) and approaching the bulk crystal density of In2O3 at 7.12 g/cm3. The films also feature a high carrier density of 5 × 1020 cm−3 and a remarkably low resistivity of 3.5 × 10−4 Ω cm, comparable to those of polycrystalline films. The analysis via vacuum-ultraviolet absorption spectroscopy on N and O atom densities in the plasma suggests that amorphization is primarily caused not by N atoms incorporated in the films but by those temporally adsorbed on the film surface, inhibiting crystal nucleation before eventually desorbing. Our findings will pave the way not only for broader applications of a-ITO films but also for the design of other amorphous materials at temperatures beyond their crystallization points.

    DOI: 10.1063/5.0211090

    Web of Science

    Scopus

    researchmap

  • Sputter deposition of ZnO-AlN pseudo-binary amorphous alloys with tunable band gaps in the deep ultraviolet region

    Urakawa, S; Magdy, W; Wada, Y; Narishige, R; Kaneshima, K; Yamashita, N; Okumura, T; Kamataki, K; Koga, K; Shiratani, M; Itagaki, N

    MATERIALS RESEARCH EXPRESS   11 ( 6 )   2024年6月   eISSN:2053-1591

     詳細を見る

    出版者・発行元:Materials Research Express  

    ZnO-AlN pseudo-binary amorphous alloys (a-ZAON hereinafter) with tunable band gaps in the deep ultraviolet (DUV) region have been synthesized using magnetron sputtering. The miscibility gap between ZnO and AlN has been overcome using room-temperature sputtering deposition, leveraging the rapid quenching abilities of sputtered particles to fabricate metastable but single-phase alloys. X-ray diffraction patterns and optical transmittance spectra revealed that the synthesized films with chemical composition ratios of [Zn]/([Zn] + [Al]) = 0.24-0.79 likely manifested as single-phase of a-ZAON films. Despite their amorphous structures, these films presented direct band gaps of 3.4-5.8 eV and thus high optical absorption coefficients (105 cm−1). Notably, the observed values adhered to Vegard’s law for crystalline ZnO-AlN systems, implying that the a-ZAON films were solid solution alloys with atomic-level mixing. Furthermore, atomic force microscopy analyses revealed smooth film surfaces with root-mean-square roughness of 0.8-0.9 nm. Overall, the wide-ranging band gap tunability, high absorption coefficients, amorphous structures, surface smoothness, and low synthesis temperatures of a-ZAON films position them as promising materials for use in DUV optoelectronic devices and power devices fabricated using large-scale glass and flexible substrates.

    DOI: 10.1088/2053-1591/ad4f57

    Web of Science

    Scopus

  • Response of lettuce seeds undergoing dormancy break and early senescence to plasma irradiation

    Okumura, T; Anan, T; Shi, HP; Attri, P; Kamataki, K; Yamashita, N; Itagaki, N; Shiratani, M; Ishibashi, Y; Koga, K; Mildaziene, V

    APPLIED PHYSICS EXPRESS   17 ( 5 )   2024年5月   ISSN:1882-0778 eISSN:1882-0786

     詳細を見る

    出版者・発行元:Applied Physics Express  

    This study reports the response of lettuce seeds undergoing dormancy breaking and early senescence to DBD plasma irradiation. A heat map of germination percentages at 12 h reveals that dormancy has broken at 39 days' storage, and that one minute of plasma irradiation enhances germination in dormant seeds. Plasma irradiation does not affect those seeds where dormancy has already broken. Early senescence via storage was estimated using ESR measurements and the molecular modification of quercetin. This study reveals that lettuce seed susceptibility to plasma irradiation depends on storage duration and conditions, with dormancy state as a critical variable modulating the impact of plasma irradiation.

    DOI: 10.35848/1882-0786/ad3798

    Web of Science

    Scopus

  • Plasma-ionic liquid-assisted CO<sub>2</sub> capture and conversion: A novel technology

    Attri, P; Koga, K; Razzokov, J; Okumura, T; Kamataki, K; Nozaki, T; Shiratani, M

    APPLIED PHYSICS EXPRESS   17 ( 4 )   2024年4月   ISSN:1882-0778 eISSN:1882-0786

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Applied Physics Express  

    The present study focused on CO2 capture, storage, and conversion through the innovative integration of plasma-ionic liquid (IL) technology. For the first time, we employed plasma-IL technology to confront climate change challenges. We utilized 1-Butyl-3-methylimidazolium chloride IL to capture and store CO2 under atmospheric pressure, and subsequently employed plasma to induce the transformation of IL-captured CO2 into CO. Furthermore, we performed computer simulations to enhance our understanding of the CO2 and CO capture processes of water and IL solutions. This comprehensive approach provides valuable insights into the potential of plasma-IL technology as a viable solution for climate change.

    DOI: 10.35848/1882-0786/ad33ea

    Web of Science

    Scopus

    researchmap

  • Heavy fuel oil-contaminated soil remediation by individual and bioaugmentation-assisted phytoremediation with Medicago sativa and with cold plasma-treated M. sativa

    Žaltauskaitė J., Meištininkas R., Dikšaitytė A., Degutytė-Fomins L., Mildažienė V., Naučienė Z., Žūkienė R., Koga K.

    Environmental Science and Pollution Research   31 ( 20 )   30026 - 30038   2024年4月   ISSN:09441344

     詳細を見る

    記述言語:英語   出版者・発行元:Environmental Science and Pollution Research  

    Developing an optimal environmentally friendly bioremediation strategy for petroleum products is of high interest. This study investigated heavy fuel oil (HFO)-contaminated soil (4 and 6 g kg−1) remediation by individual and combined bioaugmentation-assisted phytoremediation with alfalfa (Medicago sativa L.) and with cold plasma (CP)-treated M. sativa. After 14 weeks of remediation, HFO removal efficiency was in the range between 61 and 80% depending on HFO concentration and remediation technique. Natural attenuation had the lowest HFO removal rate. As demonstrated by growth rate and biomass acquisition, M. sativa showed good tolerance to HFO contamination. Cultivation of M. sativa enhanced HFO degradation and soil quality improvement. Bioaugmentation-assisted phytoremediation was up to 18% more efficient in HFO removal through alleviated HFO stress to plants, stimulated plant growth, and biomass acquisition. Cold plasma seed treatment enhanced HFO removal by M. sativa at low HFO contamination and in combination with bioaugmentation it resulted in up to 14% better HFO removal compared to remediation with CP non-treated and non-bioaugmented M. sativa. Our results show that the combination of different remediation techniques is an effective soil rehabilitation strategy to remove HFO and improve soil quality. CP plant seed treatment could be a promising option in soil clean-up and valorization.

    DOI: 10.1007/s11356-024-33182-4

    Scopus

    PubMed

  • Plasma-Driven Sciences: Exploring Complex Interactions at Plasma Boundaries

    Ishikawa, K; Koga, K; Ohno, N

    PLASMA   7 ( 1 )   160 - 177   2024年3月   ISSN:2571-6182

     詳細を見る

    出版者・発行元:Plasma  

    Plasma-driven science is defined as the artificial control of physical plasma-driven phenomena based on complex interactions between nonequilibrium open systems. Recently, peculiar phenomena related to physical plasma have been discovered in plasma boundary regions, either naturally or artificially. Because laboratory plasma can be produced under nominal conditions around atmospheric pressure and room temperature, phenomena related to the interaction of plasma with liquid solutions and living organisms at the plasma boundaries are emerging. Currently, the relationships between these complex interactions should be solved using science-based data-driven approaches; these approaches require a reliable and comprehensive database of dynamic changes in the chemical networks of elementary reactions. Consequently, the elucidation of the mechanisms governing plasma-driven phenomena and the discovery of the latent actions behind these plasma-driven phenomena will be realized through plasma-driven science.

    DOI: 10.3390/plasma7010011

    Web of Science

    Scopus

  • Growth control of <i>Marchantia polymorpha</i> gemmae using nonthermal plasma irradiation

    Tsuboyama, S; Okumura, T; Attri, P; Koga, K; Shiratani, M; Kuchitsu, K

    SCIENTIFIC REPORTS   14 ( 1 )   3172   2024年2月   ISSN:2045-2322 eISSN:2045-2322

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)   出版者・発行元:Scientific Reports  

    Abstract

    Several studies have documented that treatment by cold atmospheric pressure plasma (CAPP) on plants foster seed germination and growth in recent years. However, the molecular processes that underlie the action of CAPP on the seeds and plants remain mostly enigmatic. We here introduce gemmae of Marchantia polymorpha, a basal liverwort, as a novel model plant material suitable for CAPP research. Treating the gemmae with CAPP for a constant time interval at low power resulted in consistent growth enhancement, while growth inhibition at higher power in a dose-dependent manner. These results distinctly demonstrate that CAPP irradiation can positively and negatively regulate plant growth depending on the plasma intensity of irradiation, offering a suitable experimental system for understanding the molecular mechanisms underlying the action of CAPP in plants.

    DOI: 10.1038/s41598-024-53104-1

    Web of Science

    Scopus

    PubMed

    researchmap

    その他リンク: https://www.nature.com/articles/s41598-024-53104-1

  • Improving the efficiency of CO<inf>2</inf> methanation using a combination of plasma and molecular sieves

    Toko S., Okumura T., Kamataki K., Takenaka K., Koga K., Shiratani M., Setsuhara Y.

    Results in Surfaces and Interfaces   14   100204 - 100204   2024年2月   ISSN:2666-8459

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)   出版者・発行元:Results in Surfaces and Interfaces  

    In recent years, the chemical reactions with plasma catalysis have been attracted attention. The interaction between plasma ant catalyst can wide the process window, realizing the low pressure and low temperature processes with various catalysts. However, the wide process range make it difficult to optimization for social implement. The key lies in elucidating the reaction mechanism, predicting reactions through numerical simulations, and deriving optimal conditions. On the other hand, recent research has suggested that the use of molecular sieves (MS) can improve methanation efficiency. This can be combined with catalysts, offering new potential applications of MS in chemical reactions. Here, we investigated the more efficient combination of plasma and MS and their reaction mechanisms. As a result, it was found that: 1. The use of MS reduces the oxidation source in the gas phase, leading to an increase in methanation efficiency by suppressing reverse reactions. 2. The adsorption effect of MS, which suppress the reverse reaction, increases with higher pressure. 3. MS in plasma decrease the energy in plasma decrease the energy within the plasma, reducing the CO2 decomposition rate due to electron impact.

    DOI: 10.1016/j.rsurfi.2024.100204

    Scopus

    researchmap

  • Influence of humidity on the plasma-assisted CO<sub>2</sub> conversion

    Attri, P; Okumura, T; Takeuchi, N; Kamataki, K; Koga, K; Shiratani, M

    PLASMA PROCESSES AND POLYMERS   21 ( 1 )   2024年1月   ISSN:1612-8850 eISSN:1612-8869

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)   出版者・発行元:Plasma Processes and Polymers  

    The current research focuses on carbon dioxide (CO2) conversion at ambient conditions using streamer plasma. In this study, treatment time and humidity have been found to influence CO2 conversion. Our findings reveal a maximum CO2 conversion rate of 35.2%, achieved with a remarkably high energy efficiency of CO2 conversion at 135% and a low energy cost of 2.17 eV/molecule. We employed optical emission and fourier-transform infrared spectroscopy spectroscopy to analyze the different dissociation products of CO2 and determine the percentage of CO2 conversion. Furthermore, we utilized a two-dimensional (2D) fluid dynamics model and a zero-dimensional (0D) chemistry model to gain insights into the reactor mechanism.

    DOI: 10.1002/ppap.202300141

    Web of Science

    Scopus

    researchmap

  • プラズマ触媒作用を用いた二酸化炭素還元反応の促進に関する基礎研究

    都甲 将, 奥村 賢直, 鎌滝 晋礼, 竹中 弘祐, 古閑 一憲, 白谷 正治, 節原 裕一

    スマートプロセス学会誌   13 ( 1 )   31 - 36   2024年1月   ISSN:2186702X eISSN:21871337

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)   出版者・発行元:一般社団法人 スマートプロセス学会 (旧高温学会)  

    DOI: 10.7791/jspmee.13.31

    CiNii Research

    researchmap

  • On-axis sputtering fabrication of Tm3Fe5O12 film with perpendicular magnetic anisotropy

    Agusutrisno, MN; Marrows, CH; Kamataki, K; Okumura, T; Itagaki, N; Koga, K; Shiratani, M; Yamashita, N

    THIN SOLID FILMS   788   140176 - 140176   2024年1月   ISSN:0040-6090 eISSN:1879-2731

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)   出版者・発行元:Thin Solid Films  

    Thulium iron garnet, Tm3Fe5O12 with perpendicular magnetic anisotropy is fabricated using an on-axis sputtering technique followed by annealing, whereas previous reports have used unusual off-axis geometries. Stoichiometric Tm3Fe5O12 is obtained after the modification of the deposition conditions involving the position of the substrate relative to the cathode, which affects both the chemical and structural properties. The effective perpendicular magnetic anisotropy of 8.6 kJ/m3 is well in line with the results of previous studies using pulse laser deposition and off-axis sputtering. A maze domain pattern is observed, and the domain-wall energy is evaluated as 0.69 mJ/m2.

    DOI: 10.1016/j.tsf.2023.140176

    Web of Science

    Scopus

    researchmap

  • Subchronic toxicity study of indium-tin oxide nanoparticles following intratracheal administration into the lungs of rats

    Matsumura, N; Tanaka, YK; Ogra, Y; Koga, K; Shiratani, M; Nagano, K; Tanaka, A

    journal of Occupational Health   66 ( 1 )   n/a   2024年   ISSN:13419145 eISSN:13489585

     詳細を見る

    記述言語:英語   出版者・発行元:公益社団法人 日本産業衛生学会  

    Objectives: We aimed to analyze the subchronic toxicity and tissue distribution of indium after the intratracheal administration of indium-tin oxide nanoparticles (ITO NPs) to the lungs of rats. Methods: Male Wistar rats were administered a single intratracheal dose of 10 or 20 mg In/kg body weight (BW) of ITO NPs. The control rats received only an intratracheal dose of distilled water. A subset of rats was periodically euthanized throughout the study from 1 to 20 weeks after administration. Indium concentrations in the serum, lungs, mediastinal lymph nodes, kidneys, liver, and spleen as well as pathological changes in the lungs and kidneys were determined. Additionally, the distribution of ionic indium and indium NPs in the kidneys was analyzed using laser ablation-inductively coupled plasma mass spectrometry. Results: Indium concentrations in the lungs of the 2 ITO NP groups gradually decreased over the 20-week observation period. Conversely, the indium concentrations in the mediastinal lymph nodes of the 2 ITO groups increased and were several hundred times higher than those in the kidneys, spleen, and liver. Pulmonary and renal toxicities were observed histopathologically in both the ITO groups. Both indium NPs and ionic indium were detected in the kidneys, and their distributions were similar to the strong indium signals detected at the sites of inflammatory cell infiltration and tubular epithelial cells. Conclusions: Our results demonstrate that intratracheal administration of 10 or 20 mg In/kg BW of ITO NPs in male rats produces pulmonary and renal toxicities.

    DOI: 10.1093/joccuh/uiae019

    Web of Science

    Scopus

    PubMed

    CiNii Research

  • Capture and Conversion of CO<inf>2</inf> from Ambient Air Using Ionic Liquid-Plasma Combination

    Fitriani S.W., Okumura T., Kamataki K., Koga K., Shiratani M., Attri P.

    Plasma Chemistry and Plasma Processing   2024年   ISSN:02724324

     詳細を見る

    出版者・発行元:Plasma Chemistry and Plasma Processing  

    Climate change is considered one of the main challenges in this century, and CO2 emissions significantly cause it. Integrating CO2 capture, storage, and conversion is proposed to solve this problem. 1-Butyl-3-methylimidazolium chloride ([Bmim]Cl) ionic liquid was employed to capture and store CO2 from the air and subsequently converted into CO using non-thermal plasma. Moreover, we also tested the CO2 capture and storage capacity of water from different sources, e.g., Milli-Q, deionized water, and tap water. [Bmim]Cl solution captured CO2 from the air and then converted to CO after 24 h using plasma. In comparison with water (Milli-Q water, deionized water, and tap water), CO production was increased by 28.31% in the presence of water (Milli-Q water, deionized water, and tap water) + [Bmim]Cl. It suggests that this method could be a promising way to capture, store, and convert CO2 from air at atmospheric pressure and room temperature as an effort to reduce carbon emission.

    DOI: 10.1007/s11090-024-10500-9

    Scopus

  • Health assessment of rice cultivated and harvested from plasma-irradiated seeds

    Okumura, T; Tanaka, H; Nakao, T; Anan, T; Arita, R; Shiraki, M; Shiraki, K; Miyabe, T; Yamashita, D; Matsuo, K; Attri, P; Kamataki, K; Yamashita, N; Itagaki, N; Shiratani, M; Hosoda, S; Tanaka, A; Ishibashi, Y; Koga, K

    SCIENTIFIC REPORTS   13 ( 1 )   17450   2023年12月   ISSN:2045-2322 eISSN:2045-2322

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)   出版者・発行元:Scientific Reports  

    This study provides the health effects assessment of rice cultivated from plasma-irradiated seeds. The rice (Oryza sativa L.) cultivated from seeds with plasma irradiation showed a growth improvement (slope-ratios of with plasma to without plasma were 1.066, 1.042, and 1.255 for tiller, and earing, and ripening periods, respectively) and an 4% increase in yield. The cultivated rice was used for repeated oral administrations to mice for 4-week period. Distilled water and rice cultivated from seeds without plasma irradiation were also used as control. The weights of the lung, kidney, liver, and spleen, with corresponding average values of 0.22 g, 0.72 g, 2.1 g, and 0.17 g for w/ plasma group and 0.22 g, 0.68 g, 2.16 g, and 0.14 g for w/o plasma group, respectively, showing no effect due to the administration of rice cultivated from plasma-irradiated seeds. Nutritional status, liver function, kidney function, and lipid, neutral fat profiles, and glucose metabolism have no significant difference between with and without plasma groups. These results show no obvious subacute effects were observed on rice grains cultivated and harvested from the mother plant that experienced growth improvement by plasma irradiation. This study provides a new finding that there is no apparent adverse health effect on the grains harvested from the plasma-irradiated seeds.

    DOI: 10.1038/s41598-023-43897-y

    Web of Science

    Scopus

    PubMed

    researchmap

  • Highly selective Si<sub>3</sub>N<sub>4</sub> etching on Si using pulsed-microwave CH<sub>3</sub>F/O<sub>2</sub>/Ar plasma

    Morimoto, M; Matsui, M; Ikeda, N; Koga, K; Shiratani, M

    JAPANESE JOURNAL OF APPLIED PHYSICS   62 ( SN )   2023年11月   ISSN:0021-4922 eISSN:1347-4065

     詳細を見る

    出版者・発行元:Japanese Journal of Applied Physics  

    Highly selective Si3N4 etching on Si was achieved in a CH3F/O2/Ar plasma using pulsed-microwave plasma and time-modulation bias. The Si3N4/Si selectivity reached infinity at a peak-to-peak voltage (V pp) of 240 V. The effect of pulsed-microwave on CH3F gas dissociation for highly selective Si3N4 etching was investigated by deposited film analysis, optical emission spectroscopy, and ion current flux measurements. As the duty cycle of the pulsed-microwave was decreased, the plasma density during the pulse on period decreased and the CH/H ratio increased. The pulsed-microwave plasma produced low-dissociation radicals by providing a low plasma density. The low-dissociation radicals in the CH3F plasma formed a fluorine (F)-rich hydrofluorocarbon (HFC) layer on the Si3N4 wafer surface. The F-rich HFC layer promotes Si3N4 etching even at low ion energy, where Si etching does not proceed, and enables highly selective Si3N4 etching on Si.

    DOI: 10.35848/1347-4065/ace0ca

    Web of Science

    Scopus

  • Reaction kinetics studies for phenol degradation under the impact of different gas bubbles and pH using gas-liquid discharge plasma

    El-Tayeb, A; Okumura, T; Attri, P; Kamataki, K; Koga, K; Shiratani, M

    JAPANESE JOURNAL OF APPLIED PHYSICS   62 ( SN )   2023年11月   ISSN:0021-4922 eISSN:1347-4065

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)   出版者・発行元:Japanese Journal of Applied Physics  

    A gas-liquid discharge plasma (GLDP) reactor is used to degrade organic pollutants such as phenol. GLDP contains a 7-pin plate system used to enhance phenol degradation in the presence of various pH, and gas bubbles produced from air, O2, O3, CO2, and Ar gases. Experimental outcomes show the impact of solution pH, as phenol degradation efficiencies of 85%, 90%, 96%, and 98% were obtained for pH of 12, 9, 3, and 1, respectively, after 60 min of treatment. This shows that the optimum pH for phenol degradation lies between 1 and 3. Moreover, we explored the influence of gas bubbles generated using various gases, such as air, O2, O3, CO2, and Ar, on phenol degradation. In the presence of O3 gas bubbles, the rate and degree of phenol degradation were significantly increased compared to gas bubbles produced from other gases (O2, CO2, Ar, and air). The degradation competence of phenol by added oxygen remained higher than argon. The performance of the GLDP system at various pH values and gas bubbles was evaluated using kinetic models. Pseudo-zero, first and second reaction kinetics models were used to examine the degradation of phenol. The rate of degradation at different pH and in the presence of gas bubbles follows pseudo-zero-order kinetics. Our GLDP reactor consumed energy of 127.5 J l-1 for phenol degradation under the influence of air bubbles and pH 5. The outcome of this research can help in the design of new reactors for industrial wastewater treatment.

    DOI: 10.35848/1347-4065/acebfb

    Web of Science

    Scopus

    researchmap

  • Prediction by a hybrid machine learning model for high-mobility amorphous In<sub>2</sub>O<sub>3</sub>: Sn films fabricated by RF plasma sputtering deposition using a nitrogen-mediated amorphization method

    Kamataki, K; Ohtomo, H; Itagaki, N; Lesly, CF; Yamashita, D; Okumura, T; Yamashita, N; Koga, K; Shiratani, M

    JOURNAL OF APPLIED PHYSICS   134 ( 16 )   2023年10月   ISSN:0021-8979 eISSN:1089-7550

     詳細を見る

    出版者・発行元:Journal of Applied Physics  

    In this study, we developed a hybrid machine learning technique by combining appropriate classification and regression models to address challenges in producing high-mobility amorphous In2O3:Sn (a-ITO) films, which were fabricated by radio-frequency magnetron sputtering with a nitrogen-mediated amorphization method. To overcome this challenge, this hybrid model that was consisted of a support vector machine as a classification model and a gradient boosting regression tree as a regression model predicted the boundary conditions of crystallinity and experimental conditions with high mobility for a-ITO films. Based on this model, we were able to identify the boundary conditions between amorphous and crystalline crystallinity and thin film deposition conditions that resulted in a-ITO films with 27% higher mobility near the boundary than previous research results. Thus, this prediction model identified key parameters and optimal sputtering conditions necessary for producing high-mobility a-ITO films. The identification of such boundary conditions through machine learning is crucial in the exploration of thin film properties and enables the development of high-throughput experimental designs.

    DOI: 10.1063/5.0160228

    Web of Science

    Scopus

  • Silicon surface passivation with a-Si:H by PECVD: growth temperature effects on defects and band offset

    Nunomura, S; Sakata, I; Misawa, T; Kawai, S; Kamataki, K; Koga, K; Shiratani, M

    JAPANESE JOURNAL OF APPLIED PHYSICS   62 ( SL )   2023年9月   ISSN:0021-4922 eISSN:1347-4065

     詳細を見る

    出版者・発行元:Japanese Journal of Applied Physics  

    The surface passivation of crystalline silicon (c-Si) is studied during growth of hydrogenated amorphous silicon (a-Si:H) by means of plasma-enhanced CVD. The surface passivation is characterized by an in situ method of the photocurrent measurement of c-Si during the growth of an a-Si:H passivation layer at various growth temperatures. The passivation is also characterized by an ex situ method of the carrier lifetime measurement performed at RT in air. According to both the in situ and ex situ characterization results, the surface passivation is optimized around a growth temperate of 200 °C, where the defect reduction and the band offset formation at the a-Si:H/c-Si interface play important roles.

    DOI: 10.35848/1347-4065/ace118

    Web of Science

    Scopus

  • Contribution of active species generated in plasma to CO<sub>2</sub> methanation

    Toko, S; Hasegawa, T; Okumura, T; Kamataki, K; Takenaka, K; Koga, K; Shiratani, M; Setsuhara, Y

    JAPANESE JOURNAL OF APPLIED PHYSICS   62 ( SL )   2023年9月   ISSN:0021-4922 eISSN:1347-4065

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)   出版者・発行元:Japanese Journal of Applied Physics  

    CO2 methanation is an effective technology for CO2 reduction. Generally, methanation reactions are accelerated using thermal catalysts. However, the temperature control is difficult because CO2 methanation is an exothermic reaction, and the catalyst is deactivated by overheating. Plasma catalysis can solve this problem by driving this reaction at lower temperatures. Therefore, in this study, we investigated the contribution of the active species generated in the plasma to CO2 methanation. We found that the density of active species is linearly related to the power density, and in particular, the CH4 generation rate is determined by the CO-derived active species, not the H-derived active species. Furthermore, with an increase in the catalyst temperature, a new reaction pathway for CH4 production is added. The results of this study contribute to the understanding of the relationship between the active species produced in plasma and CO2 methanation.

    DOI: 10.35848/1347-4065/acdad9

    Web of Science

    Scopus

    researchmap

  • Single-step fabrication of fibrous Si/Sn composite nanowire anodes by high-pressure He plasma sputtering for high-capacity Li-ion batteries 査読

    Uchida, G; Masumoto, K; Sakakibara, M; Ikebe, Y; Ono, S; Koga, K; Kozawa, T

    SCIENTIFIC REPORTS   13 ( 1 )   14280   2023年9月   ISSN:2045-2322 eISSN:2045-2322

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Scientific Reports  

    To realize high-capacity Si anodes for next-generation Li-ion batteries, Si/Sn nanowires were fabricated in a single-step procedure using He plasma sputtering at a high pressure of 100–500 mTorr without substrate heating. The Si/Sn nanowires consisted of an amorphous Si core and a crystalline Sn shell. Si/Sn composite nanowire films formed a spider-web-like network structure, a rod-like structure, or an aggregated structure of nanowires and nanoparticles depending on the conditions used in the plasma process. Anodes prepared with Si/Sn nanowire films with the spider-web-like network structure and the aggregated structure of nanowires and nanoparticles showed a high Li-storage capacity of 1219 and 977 mAh/g, respectively, for the initial 54 cycles at a C-rate of 0.01, and a capacity of 644 and 580 mAh/g, respectively, after 135 cycles at a C-rate of 0.1. The developed plasma sputtering process enabled us to form a binder-free high-capacity Si/Sn-nanowire anode via a simple single-step procedure.

    DOI: 10.1038/s41598-023-41452-3

    Web of Science

    Scopus

    PubMed

    researchmap

  • Influence of electric potential-induced by atmospheric pressure plasma on cell response

    Okumura, T; Chang, CH; Koga, K; Shiratani, M; Sato, T

    SCIENTIFIC REPORTS   13 ( 1 )   15960   2023年9月   ISSN:2045-2322 eISSN:2045-2322

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)   出版者・発行元:Scientific Reports  

    Abstract

    Plasma irradiation leads not only active species, but also reactive chemical species, ultraviolet light, electric fields, magnetic fields, and shock waves. To date the effects of reactive chemical species have been mainly discussed. To understand the biological effect caused by an electric potential induced with an atmospheric-pressure plasma, the behavior of cell stimulated by electric potential was investigated using HeLa cell. The cell concentration assay revealed that less than 20% of cells inactivated by potential stimulation and the remained cells proliferate afterward. Fluorescent microscopic observation revealed that potential stimulation is appreciable to transport the molecules through membrane. These results show that potential stimulation induces intracellular and extracellular molecular transport, while the stimulation has a low lethal effect. A possible mechanism for this molecular transport by potential stimulation was also shown using numerical simulation based on an equivalent circuit of the experimental system including adhered HeLa cell. The potential formation caused by plasma generation is decisive in the contribution of plasma science to molecular biology and the elucidation of the mechanism underlying a biological response induction by plasma irradiation.

    DOI: 10.1038/s41598-023-42976-4

    Web of Science

    Scopus

    PubMed

    researchmap

    その他リンク: https://www.nature.com/articles/s41598-023-42976-4

  • Low-temperature fabrication of silicon nitride thin films from a SiH4+N2 gas mixture by controlling SiNx nanoparticle growth in multi-hollow remote plasma chemical vapor deposition

    Kamataki, K; Sasaki, Y; Nagao, I; Yamashita, D; Okumura, T; Yamashita, N; Itagaki, N; Koga, K; Shiratani, M

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   164   2023年9月   ISSN:1369-8001 eISSN:1873-4081

     詳細を見る

    出版者・発行元:Materials Science in Semiconductor Processing  

    High-quality amorphous silicon nitride (SiNx) thin films were fabricated by the controlled growth of nanoparticles during SiH4+N2 multi-hollow remote plasma chemical vapor deposition (CVD) at low substrate temperature 100 °C. Measurements from quartz crystal microbalances showed that a higher amount of nanoparticle incorporation in the SiNx film corresponded to a higher ratio of N/Si in the film, implying that the nanoparticles were nitrided in the plasma phase. We controlled the size of the nanoparticles by tuning the gas flow ratio of N2/SiH4 and the total gas flow rate. Transmission electron microscopy and energy-dispersive X-ray spectroscopy showed that smaller nanoparticles in the plasma led to a higher ratio of N/Si in the film and a lower hydrogen content. We attribute these results to the low heat capacity and large specific surface area of the nanoparticles, which enabled active chemical reactions on their surface in the plasma.

    DOI: 10.1016/j.mssp.2023.107613

    Web of Science

    Scopus

  • Control of inhomogeneity and magnetic properties of ZnO:Co films grown by magnetron sputtering using nitrogen

    Agusutrisno, MN; Narishige, R; Kamataki, K; Okumura, T; Itagaki, N; Koga, K; Shiratani, M; Yamashita, N

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   162   2023年8月   ISSN:1369-8001 eISSN:1873-4081

     詳細を見る

    出版者・発行元:Materials Science in Semiconductor Processing  

    We experimentally report the control of structural inhomogeneity and magnetic properties of Co-doped ZnO films using nitrogen mediated-crystallization. The ZnO:CoN were grown on a silicon substrate at room temperature by RF-magnetron sputtering using nitrogen and followed by a post-annealing treatment for 3 hours at 400 °C, 600 °C, 800 °C and 1000 °C in the air. This method induces changes in inhomogeneity properties comprised by microstructure and stoichiometry of each film, which are confirmed by X-ray diffraction, thermal desorption, and X-ray fluorescence measurements. The difference in inhomogeneity has led to the transformation in the magnetic properties. Films annealed at 400 °C, which showed the highest inhomogeneity, exhibited superparamagnetic-ferromagnetic properties. In contrast, all the other films exhibited diamagnetic properties. Increasing the post-annealing temperature above 400 °C reduces inhomogeneities indicated by improved grain size, decreased impurities, and lattice parameters and stoichiometry of ZnO:CoN films approached those of pure ZnO. Our present results will contribute to control the inhomogeneity of ZnO:Co films to improve magnetic properties at room temperature.

    DOI: 10.1016/j.mssp.2023.107503

    Web of Science

    Scopus

  • Improving the efficiency of Sabatier reaction through H<sub>2</sub>O removal with low-pressure plasma catalysis

    Hasegawa, T; Toko, S; Kamataki, K; Koga, K; Shiratani, M

    JAPANESE JOURNAL OF APPLIED PHYSICS   62 ( SL )   SL1028 - SL1028   2023年8月   ISSN:0021-4922 eISSN:1347-4065

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)   出版者・発行元:Japanese Journal of Applied Physics  

    Abstract

    This study aimed to realize in situ resource utilization in deep-space missions. The Sabatier reaction is used to generate CH4 from CO2, which accounts for 95% of the Martian atmosphere, and H2 from H2O on Mars. In general, thermal catalysis at temperatures above 250 °C drives the process. This high-temperature process, however, causes catalyst deactivation due to overheating. Plasma catalysis drives low-temperature reactions by excitation and decomposition of source gases via electron impact. We investigated the effect of removing H2O from gas phase in the reaction with Cu and Ni catalysts using molecular sieves in this study. The reverse reaction can be aided by OH radicals derived from H2O. Therefore, CO2 conversion increased from 49.4% to 69.1% for Cu catalysts with molecular sieves, and CH4 selectivity increased from 3.49% to 6.33%. These findings imply that removing H2O can suppress the reverse reactions.

    DOI: 10.35848/1347-4065/ace831

    Web of Science

    Scopus

    researchmap

    その他リンク: https://iopscience.iop.org/article/10.35848/1347-4065/ace831/pdf

  • Plasma-assisted CO<sub>2</sub> and N<sub>2</sub> conversion to plant nutrient

    Attri, P; Okumura, T; Takeuchi, N; Kamataki, K; Koga, K; Shiratani, M

    FRONTIERS IN PHYSICS   11   2023年7月   ISSN:2296-424X eISSN:2296-424X

     詳細を見る

    掲載種別:研究論文(学術雑誌)   出版者・発行元:Frontiers in Physics  

    Colossal research on CO2 and N2 conversion using non-thermal plasma (NTP) technology has been ongoing since many years. The primary focus is on CO and NH3 production through CO2 and N2 conversion, respectively, with high conversion efficiency and low energy consumption with or without catalysts. Although in the present study, we propose that the NTP can assist in converting CO2 and N2 to plant nutrients in the form of plasma-treated/activated water. We used a homemade streamer plasma device and produced plasma-activated water (PAW) using CO2 and N2 feed gas, CO2-activated water (CAW) and N2-activated water (NAW). Later, we used CAW and NAW to treat the radish seeds and evaluate the germination rate, germination percentage, and seeding growth. To understand the chemical changes in PAW after the NTP treatment, we performed a chemical analysis to detect NO2¯, NO3¯, NH4+, and H2O2 along with the PAW pH and temperature shift. Additionally, to understand the other species produced in the gas phase, we simulated chemical reactions using COMSOL Multiphysics® software. Our results show that NOx and NHx species are less produced in CAW than in NAW, but CO2-generated PAW offers a significantly more substantial effect on enhancing the germination rate and seeding growth than NAW. Therefore, we suggested that CO and H2O2 formed during CAW production trigger early germination and growth enhancement. Furthermore, the total plasma reactor energy consumption, NO3¯ and NH4+ selective production percentage, and N2 conversion percentage were calculated. To our best knowledge, this is the first study that uses plasma-assisted CO2 conversion as a nutrient for plant growth.

    DOI: 10.3389/fphy.2023.1211166

    Web of Science

    Scopus

    researchmap

  • Effect of time-modulation bias on polysilicon gate etching

    Morimoto, M; Tanaka, M; Koga, K; Shiratani, M

    JAPANESE JOURNAL OF APPLIED PHYSICS   62 ( SI )   2023年7月   ISSN:0021-4922 eISSN:1347-4065

     詳細を見る

    出版者・発行元:Japanese Journal of Applied Physics  

    The etching characteristics were studied via time-modulation bias (bias pulsing) by varying the pulsing parameters. The etch profiles were verified using polysilicon gate structures with dense and isolated patterns. Ion energy was defined as the peak-to-peak voltage (V pp) controlled by the RF bias power. The durations of the on period and off period (off time) of bias pulsing were adjusted by the pulse frequency and duty cycle. Profile evolution was observed in the variations in V pp and off time. Increasing the ion energy induced vertical profiles of dense patterns and the tapered profiles of isolated patterns. Extending the off time of bias pulsing induced tapered profiles of dense patterns and vertical profiles of isolated patterns. These results indicated that increasing the ion energy and pulse off time simultaneously was the direction to achieve anisotropic etch profiles for both the isolated and dense patterns.

    DOI: 10.35848/1347-4065/acc7ab

    Web of Science

    Scopus

  • Optical emission spectroscopy study in CO<sub>2</sub> methanation with plasma

    Toko, S; Hasegawa, T; Okumura, T; Kamataki, K; Takenaka, K; Koga, K; Shiratani, M; Setsuhara, Y

    JAPANESE JOURNAL OF APPLIED PHYSICS   62 ( SI )   2023年7月   ISSN:0021-4922 eISSN:1347-4065

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)   出版者・発行元:Japanese Journal of Applied Physics  

    Methanation of CO2 is a key technology to realize a sustainable society. The reactions should be driven at a lower temperatures from the viewpoint of catalyst stability. Methanation with plasma catalysis can drive reactions at lower temperature than thermal catalysis. However, the reaction mechanism is little understood due to the complexity of the interactions. In this study, we investigated the power and pressure dependence of the methanation efficiency when only plasma is used as a fundamental research. We discuss how these parameters change the vibrational temperature and active species density and affect the methanation efficiency using optical emission spectroscopy.

    DOI: 10.35848/1347-4065/acc66a

    Web of Science

    Scopus

    researchmap

  • Instant switching control between two types of plasma-driven liquid flows 査読

    Kawasaki, T; Shen, KC; Shi, HP; Koga, K; Shiratani, M

    JAPANESE JOURNAL OF APPLIED PHYSICS   62 ( 6 )   060904-1 - 060904-4   2023年6月   ISSN:0021-4922 eISSN:1347-4065

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Japanese Journal of Applied Physics  

    Plasma-driven liquid flows that are generated in bulk liquid by plasma irradiation are one of the key factors in understanding the interaction between plasma and liquid. In this work, the direction of the plasma-driven liquid flow was successfully switched and controlled only by changing the frequency of argon plasma jet generation. The liquid flow could switch in the opposite direction within 3 s after the frequency change. Changes in the emission spectra with frequency have an important effect on the liquid flows, with results from current waveforms indicating that the frequency also changes the characteristics of the plasma jet.

    DOI: 10.35848/1347-4065/acde29

    Web of Science

    Scopus

    researchmap

  • Cold Plasma-Induced Changes in <i>Stevia rebaudiana</i> Morphometric and Biochemical Parameter Correlations

    Judickaite, A; Venckus, J; Koga, K; Shiratani, M; Mildaziene, V; Zukiene, R

    PLANTS-BASEL   12 ( 8 )   2023年4月   ISSN:2223-7747

     詳細を見る

    記述言語:英語   出版者・発行元:Plants  

    Stevia rebaudiana Bertoni is an economically important source of natural low-calorie sweeteners, steviol glycosides (SGs), with stevioside (Stev) and rebaudioside A (RebA) being the most abundant. Pre-sowing seed treatment with cold plasma (CP) was shown to stimulate SGs biosynthesis/accumulation up to several fold. This study aimed to evaluate the possibility to predict CP-induced biochemical changes in plants from morphometric parameters. Principle component analysis (PCA) was applied to two different sets of data: morphometric parameters versus SGs concentrations and ratio, and morphometric parameters versus other secondary metabolites (total phenolic content (TPC), total flavonoid content (TFC)) and antioxidant activity (AA). Seeds were treated for 2, 5 and 7 min with CP (CP2, CP5 and CP7 groups) before sowing. CP treatment stimulated SGs production. CP5 induced the highest increase of RebA, Stev and RebA+Stev concentrations (2.5-, 1.6-, and 1.8-fold, respectively). CP did not affect TPC, TFC or AA and had a duration-dependent tendency to decrease leaf dry mass and plant height. The correlation analysis of individual plant traits revealed that at least one morphometric parameter negatively correlates with Stev orRebA+Stev concentration after CP treatment.

    DOI: 10.3390/plants12081585

    Web of Science

    Scopus

    PubMed

  • Effects of plasma-activated Ringer's lactate solution on cancer cells: evaluation of genotoxicity

    Liu, Y; Nakatsu, Y; Tanaka, H; Koga, K; Ishikawa, K; Shiratani, M; Hori, M

    GENES AND ENVIRONMENT   45 ( 1 )   3   2023年1月   ISSN:1880-7046 eISSN:1880-7062

     詳細を見る

    記述言語:英語   出版者・発行元:Genes and Environment  

    Background: Non-thermal atmospheric pressure plasma technologies form the core of many scientific advances, including in the electronic, industrial, and biotechnological fields. The use of plasma as a cancer therapy has recently attracted significant attention due to its cancer cell killing activity. Plasma-activated Ringer’s lactate solution (PAL) exhibits such activity. In addition to ROS, PAL contains active compounds or species that cause cancer cell death, but the potential mutagenic risks of PAL have not been studied. Results: PAL has a low pH value and a high concentration of H2O2. H2O2 was removed from PAL using catalase and catalase-treated PAL with a pH of 5.9 retained a killing effect on HeLa cells whereas this effect was not observed if the PAL was adjusted to pH 7.2. Catalase-treated PAL at pH 5.9 had no significant effect on mutation frequency, the expression of γH2AX, or G2 arrest in HeLa cells. Conclusion: PAL contains one or more active compounds or species in addition to H2O2 that have a killing effect on HeLa cells. The compound(s) is active at lower pH conditions and apparently exhibits no genotoxicity. This study suggested that identification of the active compound(s) in PAL could lead to the development of novel anticancer drugs for future cancer therapy.

    DOI: 10.1186/s41021-023-00260-x

    Web of Science

    Scopus

    PubMed

  • Editorial: Prospects of plasma generated species interaction with organic and inorganic materials

    Attri, P; Koga, K; Kurita, H; Ishikawa, K; Shiratani, M

    FRONTIERS IN PHYSICS   10   2023年1月   ISSN:2296-424X eISSN:2296-424X

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)   出版者・発行元:Frontiers in Physics  

    DOI: 10.3389/fphy.2022.1118018

    Web of Science

    Scopus

    researchmap

  • Role of insoluble atoms in the formation of a three-dimensional buffer layer in inverted Stranski–Krastanov mode

    Yamashita, N; Mitsuishi, R; Nakamura, Y; Takeda, K; Hori, M; Kamataki, K; Okumura, T; Koga, K; Shiratani, M

    JOURNAL OF MATERIALS RESEARCH   38 ( 5 )   1178 - 1185   2023年1月   ISSN:0884-2914 eISSN:2044-5326

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)   出版者・発行元:Journal of Materials Research  

    The inverted Stranski–Krastanov (SK) mode is useful for heteroepitaxial growth of single-crystalline ZnO films on 18% lattice-mismatched sapphire substrates. We studied the role of nitrogen atoms during fabrication of a three-dimensional island-shaped buffer layer. We found an unprecedented maximum in the substrate temperature dependence of the density of the crystal grains, which facilitated the growth of flat ZnO layers. To reveal the mechanism of the aforementioned maximum, we measured the absolute N atom density in Ar/N2 sputtering plasma [N]plasma by vacuum-ultraviolet absorption spectroscopy. At [N]plasma = 2.2 × 1010 cm−3, we fabricated a ZnO film with a pit-free surface, attributable to the large surface reaction probability and small incorporation ratio of N atoms into the ZnO films. To describe these results, we applied an Ising model. The analytical calculations provide insights for inverted SK mode and clearly reveal the critical effects of the flux densities. Graphical abstract: [Figure not available: see fulltext.]

    DOI: 10.1557/s43578-022-00886-7

    Web of Science

    Scopus

    researchmap

    その他リンク: https://link.springer.com/article/10.1557/s43578-022-00886-7/fulltext.html

  • プラズマ活性化乳酸リンゲル液が癌細胞に及ぼす影響 遺伝毒性の評価(Effects of plasma-activated Ringer's lactate solution on cancer cells: evaluation of genotoxicity)

    Liu Yang, Nakatsu Yoshimichi, Tanaka Hiromasa, Koga Kazunori, Ishikawa Kenji, Shiratani Masaharu, Hori Masaru

    Genes and Environment   45   1 of 10 - 10 of 10   2023年1月   ISSN:1880-7046

     詳細を見る

    記述言語:英語   出版者・発行元:日本環境変異原ゲノム学会  

    プラズマ活性化乳酸リンゲル液(PAL)の細胞障害性と遺伝毒性について検討した。pHが低く高濃度のH2O2を含有するPALから、カタラーゼを用いてH2O2を除去した。その結果、PALのpHは5.6以下から5.9に上昇し、これらのカタラーゼ処理したPALではHeLa細胞に対する殺細胞効果が保持されていたが、カタラーゼ処理したPALのpHを7.2に調整すると効果が消失した。だが、カタラーゼ処理したpH5.9のPALには、HeLa細胞における変異頻度やγH2AX発現およびG2期停止に対し有意な作用を観察されなかった。以上より、今回の実験結果から、PALはH2O2以外にもHeLa細胞に対し殺細胞効果をもたらす1種類以上の活性化合物や活性種が含有されていることが明らかにされた。また、これらの物質は低pH条件下で活性化し遺伝毒性は有さないことから、PAL中の活性物質を同定することにより、抗癌剤の新薬開発に繋がることが期待された。

  • Stress reduction of a-C:H films with inserting submonolayer of carbon nanoparticles

    Shiratani Masaharu, Ono Shinjiro, Eri Manato, Okumura Takamasa, Kamataki Kunihiro, Yamashita Naoto, Kiyama Haruki, Itagaki Naho, Koga Kazunori

    Abstract book of Annual Meeting of the Japan Society of Vacuum and Surface Science   2023 ( 0 )   1Ga06   2023年   eISSN:24348589

     詳細を見る

    記述言語:英語   出版者・発行元:The Japan Society of Vacuum and Surface Science  

    <p>Amorphous carbon (a-C(:H)) thin films have been studied in a wide range of fields as protective films for automotive parts, hard masks for semiconductor device fabrication, and biocompatible films for medical devices due to their excellent characteristics. In particular, mechanical properties (film stress and fracture toughness) related to film delamination are important because they are related to the durability of the films, which in turn are related to film stress and adhesion strength. Recently, we have shown that the introduction of carbon nanoparticles (CNPs) between two layers of a-C:H thin films reduces film stress[1]. In this study, we evaluated other properties of the CNP-inserted sample and examined the effect of CNPs on the mechanical properties of the film toward the practical stage.</p><p>Sandwich structure films were fabricated using a capacitively coupled plasma-enhanced chemical vapor deposition (PECVD) system [1]. Ar and CH4 gases were introduced from the top at 19 sccm and 2.6 sccm, respectively. The thickness of the first and second layers was 154 nm. For the nanoindentation test, a nanoindentation tester (ENT-1100a) was employed and a Berkovich indenter was used.</p><p></p><p>The load-unloading curve by nano-indentation showed a typical curve at 5 mN, and a step in the curve occurred at over 8 mN, and SEM images of the indentation showed that the membrane peeled off in a circular shape when the step occurred. EDS analysis of the peel scar revealed that the peel occurred at the interface between the first and second layers. In addition, the fracture toughness of the film was determined from the SEM images of the delamination traces and the load-unloading curve at the time of step generation, and it decreased with increasing Cp in the region where the film stress was constant for the CNP coverage. These results suggest that CNP coverage has a negative correlation with fracture toughness and that there is an optimum value for improving mechanical properties. Other properties will be discussed in detail in the presentation.</p><p></p><p>[1] S.H. Hwang et al., Jpn. J. Appl. Phys. 59 100906, (2020).</p>

    DOI: 10.14886/jvss.2023.0_1ga06

    CiNii Research

  • Role of Direct Plasma Irradiation, Plasma-Activated Liquid, and Plasma-Treated Soil in Plasma Agriculture

    Attri P., Okumura T., Takeuchi N., Razzokov J., Zhang Q., Kamataki K., Shiratani M., Koga K.

    Plasma Medicine   13 ( 3 )   33 - 52   2023年   ISSN:19475764

     詳細を見る

    出版者・発行元:Plasma Medicine  

    Seed treatment with non-thermal plasma has seen a tremendous increase in both direct and indirect applications recently. In this review, we examined the effects of direct plasma irradiation, plasma-activated water (PAW), plasma-activated Ringer’s lactate solution, and plasma-treated soil on seeds, resulting in positive, negative, and neutral changes. Furthermore, we will compare the impact of pressure and feed gases on seed germination and seedling growth. Addition-ally, we focused on the types of reactive oxygen and nitrogen species (RONS) and their concentrations produced in the gas and liquid phases, as these play a crucial role in germination percentage and seedling growth. In conclusion, we find that plasma agriculture’s success is contingent on seed morphology, the types and concentrations of reactive species, and specific plasma characteristics.

    DOI: 10.1615/PlasmaMed.2023050454

    Scopus

  • One-dimensional particle-in-cell/Monte Carlo collision simulation for investigation of amplitude modulation effects in RF capacitive discharges

    Nagao, I; Kamataki, K; Yamamoto, A; Otaka, M; Yamamoto, Y; Yamashita, D; Yamashita, N; Okumura, T; Itagaki, N; Koga, K; Shiratani, M

    MRS ADVANCES   7 ( 31 )   911 - 917   2022年12月   ISSN:2731-5894 eISSN:2059-8521

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)   出版者・発行元:MRS Advances  

    We have investigated the effects of amplitude modulation (AM) discharges especially in differences of AM frequency on plasma parameters such as electric field, electron density, electron temperature, ion energy distribution function (IEDF), and ion angular distribution function (IADF) of capacitively coupled AM discharge Ar plasma using a Particle-in-cell/Monte Carlo collision (PIC-MCC) model. The electron density and the kinetic energy of ions incident on the grounded electrode oscillate periodically with the AM frequency. The oscillation amplitude of the electron density in the central plasma region between the electrodes decreases with increasing the AM frequency above 5 kHz. On the other hand, the peak energy of IEDF decreases with increasing the AM frequency above 500 kHz. Thus, the AM frequency is a good tuning knob to control such plasma parameters.

    DOI: 10.1557/s43580-022-00417-w

    Web of Science

    Scopus

    researchmap

    その他リンク: https://link.springer.com/article/10.1557/s43580-022-00417-w/fulltext.html

  • Effects of substrate surface polarity on heteroepitaxial growth of pseudobinary ZnO–InN alloy films on ZnO substrates

    Narishige, R; Yamashita, N; Kamataki, K; Okumura, T; Koga, K; Shiratani, M; Yabuta, H; Itagaki, N

    JOURNAL OF MATERIALS RESEARCH   38 ( 7 )   1803 - 1812   2022年11月   ISSN:0884-2914 eISSN:2044-5326

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)   出版者・発行元:Journal of Materials Research  

    (ZnO)X(InN)1-X films have been epitaxially grown on 0.9%-lattice-mismatched ZnO substrates at 450 °C by sputtering. Films fabricated on O-polar substrates exhibit higher crystal quality and smoother surface. The full width at half-maximum of (0002) rocking curve and the root-mean-square roughness (Rq) of a 30-nm-thick film on O-polar surface are 0.21° and 2.71 nm, respectively, whereas those on Zn-polar one are 0.32° and 4.30 nm, respectively. Rq on O-polar surface further decreases to 0.73 nm as the thickness decreases to 10 nm, where we successfully obtained atomically flat single-crystalline films having atomically sharp interface with the substrates. High-resolution transmission electron microscopy revealed the Stranski–Krastanov (layer plus island) growth for O-polar case and just 3D islanding mode growth for Zn-polar one. All the results indicate the much longer migration length of adatoms on O-polar surface during the film growth, enabling adatoms to reach their thermodynamically favored positions even at low substrate temperature. Graphical abstract: [Figure not available: see fulltext.]

    DOI: 10.1557/s43578-022-00827-4

    Web of Science

    Scopus

    researchmap

    その他リンク: https://link.springer.com/article/10.1557/s43578-022-00827-4/fulltext.html

  • Raman spectral analysis of the as-deposited a-C:H films prepared by CH<sub>4</sub>+ Ar plasma CVD

    Ono, S; Hwang, SH; Okumura, T; Kamataki, K; Yamashita, N; Itagaki, N; Koga, K; Shiratani, M; Oh, JS; Takabayashi, S; Nakatani, T

    MRS ADVANCES   7 ( 30 )   718 - 722   2022年11月   ISSN:2731-5894 eISSN:2059-8521

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:MRS Advances  

    Applicability of precise Raman spectral analysis of a-C:H films deposited using a plasma chemical vapor deposition (CVD) method has been discussed based on the sensitivity to initial conditions in peak separation. The spectral analysis offers to deconvolute the spectra into five peaks, while the as-deposited films prepared by plasma CVD is difficult to the five-peak separation. We found the peak position and the peak height ratio of the D-band to the G(+)-band can be employed to discuss the structure of the as-deposited films. We examined the structural difference between the films deposited at the powered electrode and that at grounded electrode. We found graphene nanoribbon-like structures may be formed in the films deposited on the grounded substrate. This result suggests that the substrate position is an important factor to form the graphene nanoribbon-like structure.

    DOI: 10.1557/s43580-022-00310-6

    Web of Science

    Scopus

    researchmap

  • Effects of amplitude modulated capacitively coupled discharge Ar plasma on kinetic energy and angular distribution function of ions impinging on electrodes: particle-in-cell/Monte Carlo collision model simulation

    Abe, K; Kamataki, K; Yamamoto, A; Nagao, I; Otaka, M; Yamashita, D; Okumura, T; Yamashita, N; Itagaki, N; Koga, K; Shiratani, M

    JAPANESE JOURNAL OF APPLIED PHYSICS   61 ( 10 )   106003 - 106003   2022年9月   ISSN:0021-4922 eISSN:1347-4065

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)   出版者・発行元:Japanese Journal of Applied Physics  

    Abstract

    We investigated the effects of amplitude modulated (AM) capacitively coupled Ar discharge plasma on the ion energy distribution function (IEDF) and the ion angular distribution function (IADF) incident on electrodes using the particle-in-cell/Monte Carlo collision model. For AM discharge, the electron density and electron temperature and the kinetic energy and angle of ions incident on the ground electrode change periodically with AM frequency, whereas ones for continuous wave discharge are almost constant. For AM discharge, the plasma had hysteresis characteristics. The peak energy of IEDF varies from 53 to 135 eV and the FWHM of IADF varies from 1.82 to 3.34 degrees for gas pressure 10mTorr, the peak-to-peak input voltage 400 V and AM level of 50%. The variation width of the peak energy of IEDF and FWHM of IADF increases with the AM level. These effects of AM method discharge are more noticeable at lower pressures. Thus, the AM discharge offers a way to control simultaneously IEDF and IADF, which opens a new avenue for plasma processes such as an ALD-like PECVD.

    DOI: 10.35848/1347-4065/ac7626

    Web of Science

    Scopus

    researchmap

    その他リンク: https://iopscience.iop.org/article/10.35848/1347-4065/ac7626/pdf

  • Effects of amplitude modulated discharge on growth of nanoparticles in TEOS/O<sub>2</sub>/Ar capacitively coupled plasma

    Kamataki, K; Nagamatsu, D; Yang, T; Abe, K; Yamamoto, A; Nagao, I; Arima, T; Otaka, M; Yamamoto, Y; Yamashita, D; Okumura, T; Yamashita, N; Itagaki, N; Koga, K; Shiratani, M

    AIP ADVANCES   12 ( 8 )   2022年8月   eISSN:2158-3226

     詳細を見る

    出版者・発行元:AIP Advances  

    We investigate the effects of the amplitude modulation (AM) discharge method on the growth of nanoparticles and the relation between growth of nanoparticles and plasma generation in tetraethylorthosilicate (TEOS)/O2/Ar plasma. The laser-light scattering (LLS) intensity, which is proportional to the density and the sixth power of the size of nanoparticles in the Rayleigh scattering regime, decreases by 18% at an AM level of 10% and by 60% at an AM level of 50%. On the other hand, the ArI emission intensity, which is roughly proportional to plasma density, is higher than that for the continuous wave discharge. Thus, AM discharges suppress growth of nanoparticles in TEOS plasma. We have shown oscillations of the axial electric field Ez with the AM frequency for AM discharge by electric field measurement using an electro-optic probe. We have discussed that these fluctuations of Ez mainly lead to the vertical oscillation of the levitation position of nanoparticles trapped in the plasma sheath boundary region by taking into account the force balance equation in the axial direction on these negatively charged nanoparticles.

    DOI: 10.1063/5.0097691

    Web of Science

    Scopus

  • Effects of amplitude modulated discharge on growth of nanoparticles in TEOS/O2/Ar capacitively coupled plasma

    Kamataki Kunihiro, Nagamatsu Daiki, Yang Tao, Abe Kohei, Yamamoto Akihiro, Nagao Iori, Arima Toshiaki, Otaka Michihiro, Yamamoto Yuma, Yamashita Daisuke, Okumura Takamasa, Yamashita Naoto, Itagaki Naho, Koga Kazunori, Shiratani Masaharu

    AIP Advances   12 ( 8 )   2022年8月   eISSN:21583226

     詳細を見る

    記述言語:英語  

    CiNii Research

  • Changes in Content of Bioactive Compounds and Antioxidant Activity Induced in Needles of Different Half-Sib Families of Norway Spruce (<i>Picea abies</i> (L.) H. Karst) by Seed Treatment with Cold Plasma

    Sirgedaite-Seziene, V; Lucinskaite, I; Mildaziene, V; Ivankov, A; Koga, K; Shiratani, M; Lauzike, K; Baliuckas, V

    ANTIOXIDANTS   11 ( 8 )   2022年8月   ISSN:2076-3921 eISSN:2076-3921

     詳細を見る

    記述言語:英語   出版者・発行元:Antioxidants  

    In order to ensure sufficient food resources for a constantly growing human population, new technologies (e.g., cold plasma technologies) are being developed for increasing the germination and seedling growth without negative effects on the environment. Pinaceae species are considered a natural source of antioxidant compounds and are valued for their pharmaceutical and nutraceutical properties. In this study, the seeds of seven different Norway spruce half-sib families were processed for one or two minutes with cold plasma (CP) using dielectric barrier discharge (DBD) plasma equipment. At the end of the second vegetation season, the total flavonoid content (TFC), DPPH (2,2- diphenyl-1-picryl-hydrazyl-hydrate), and ABTS (2,2’-azino-bis (3-ethylbenzothiazoline-6-sulfonic acid)) antioxidant activity, and the amounts of six organic acids (folic, malic, citric, oxalic, succinic, and ascorbic) were determined in the needles of different half-sib families of Norway spruce seedlings. The results show that the TFC, antioxidant activity, and amounts of organic acids in the seedling needles depended on both the treatment duration and the genetic family. The strongest positive effect on the TFC was determined in the seedlings of the 477, 599, and 541 half-sib families after seed treatment with CP for 1 min (CP1). The TFC in these families increased from 118.06 mg g−1 to 312.6 mg g−1 compared to the control. Moreover, seed treatment with CP1 resulted in the strongest increase in the antioxidant activity of the needles of the 541 half-sib family seedlings; the antioxidant activity, determined by DPPH and ABTS tests, increased by 30 and 23%, respectively, compared to the control. The obtained results indicate that the CP effect on the amount of organic acids in the needles was dependent on the half-sib family. It was determined that treatment with CP1 increased the amount of five organic acids in the needles of the 541 half-sib family seedlings. The presented results show future possibilities for using cold plasma seed treatment in the food and pharmacy industries.

    DOI: 10.3390/antiox11081558

    Web of Science

    Scopus

    PubMed

  • Detection of NO3− introduced in plasma-irradiated dry lettuce seeds using liquid chromatography-electrospray ionization quantum mass spectrometry (LC-ESI QMS)

    Okumura, T; Attri, P; Kamataki, K; Yamashita, N; Tsukada, Y; Itagaki, N; Shiratani, M; Ishibashi, Y; Kuchitsu, K; Koga, K

    SCIENTIFIC REPORTS   12 ( 1 )   12525   2022年7月   ISSN:2045-2322 eISSN:20452322

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)   出版者・発行元:Springer Science and Business Media LLC  

    Abstract

    Discharge plasma irradiates seeds with reactive oxygen and nitrogen species (RONS). However, RONS introduced in seeds by plasma irradiation have not been successfully detected thus far. This study provides experimental evidence that nitrate ion NO3 is introduced in lettuce seeds as RONS upon irradiation with atmospheric-pressure air dielectric barrier discharge plasma. Plasma irradiation for 5 min promotes seed germination. The components of the plasma-irradiated seeds were examined using electrospray ionization quantum mass spectrometry (ESI QMS), which revealed that the plasma irradiation introduced an ion with a mass of 62 m/z in detectable amounts. This ion was identified as NO3 by liquid chromatography (LC), multiple wavelength detector (MWD), and LC-ESI QMS. A one-dimensional simulation at electron temperature Te = 1 eV, electron density Ne = 1013/m3, and gas temperature Tg = 300 K indicated the introduction of NO3, involving nitric oxide NO. NO3 is one of the most important ions that trigger signal transduction for germination when introduced in seeds. The scanning electron microscopy (SEM) images revealed that there was no change on the surface of the seeds after plasma irradiation. Plasma irradiation is an effective method of introducing NO3 in seeds in a dry process without causing damage.

    DOI: 10.1038/s41598-022-16641-1

    Web of Science

    Scopus

    PubMed

    CiNii Research

    researchmap

    その他リンク: https://www.nature.com/articles/s41598-022-16641-1

  • Treatment of organic wastewater by a combination of non-thermal plasma and catalyst: a review

    Attri, P; Koga, K; Okumura, T; Chawarambwa, FL; Putri, TE; Tsukada, Y; Kamataki, K; Itagaki, N; Shiratani, M

    REVIEWS OF MODERN PLASMA PHYSICS   6 ( 1 )   2022年7月   ISSN:2367-3192 eISSN:2367-3192

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)   出版者・発行元:Reviews of Modern Plasma Physics  

    Recently, non-thermal plasma technology has been frequently used for wastewater treatment. Plasma technology uses the effect of high-energy electrons, reactive species, ultraviolet light, free radicals, and pyrolysis to treat wastewater. Although in many cases, only the use of non-thermal plasma alone is not successful in degrading the complex organic wastes. This might be because of complexity in wastewater or not appropriate plasma device for wastewater treatment, or improper use of plasma-generated species that plays a critical role in organic waste degradation. To increase the degradation efficiency and reduce treatment time, the combination of non-thermal plasma and catalysts (homogeneous and heterogeneous) improves pollutant removal. This review includes the different non-thermal plasma systems and their action on decolorizing or degradation of dyes, degradation of phenolic pollutants, and degradation of pharmaceutical products, including antibiotics and other volatile organic solvents (VOC’s) with and without catalyst. Finally, probable mechanisms and suggestions to improve the wastewater treatment using non-thermal plasma were put forward. This review aims to help researchers understand the role of treatment time, feed gases, and catalysts on the degradation of organic wastes and looks forward to all possible developments in this field.

    DOI: 10.1007/s41614-022-00077-1

    Web of Science

    Scopus

    researchmap

    その他リンク: https://link.springer.com/article/10.1007/s41614-022-00077-1/fulltext.html

  • Spatio-temporal measurements Ar 2p<sub>1</sub> excitation rates and optical emission spectroscopy by capacitively coupled Ar and Ne mixed gas plasma

    Otaka, M; Arima, T; Lai, J; Ikeda, K; Kamataki, K; Yamashita, N; Okumura, T; Itagaki, N; Koga, K; Shiratani, M

    MRS ADVANCES   7 ( 31 )   918 - 922   2022年7月   ISSN:2731-5894 eISSN:2059-8521

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)   出版者・発行元:MRS Advances  

    We investigated the Ar mixture ratio dependence of the high-energy electron behaviors in capacitively coupled Ar+Ne plasmas using Optical Emission Spectroscopy (OES) and Phase-Resolved Optical Emission Spectroscopy (PROES) methods. OES measurements showed that optical emission intensities of Ar and Ne decreased as Ar mixture ratio increased, which implied decreases in the excitation rates of Ar and Ne. The spatio-temporal distribution of the Ar I 2p1 excitation rate was measured using the PROES method. These measurements showed the Ar I 2p1 excitation rate decreased as the Ar mixture ratio increased, which was consistent with the OES results. These results implied that the collision frequency between electrons and neutral particles increased with increase in Ar mixture ratio. In addition, the sheath expansion width in one RF cycle became small with increasing Ar mixture ratio, which led to a weakening of the effect of stochastic heating and a decrease of the electron temperature.

    DOI: 10.1557/s43580-022-00306-2

    Web of Science

    Scopus

    researchmap

    その他リンク: https://link.springer.com/article/10.1557/s43580-022-00306-2/fulltext.html

  • Cold plasma-induced stimulation of natural sweeteners biosynthesis in <i>Stevia rebaudiana</i> Bertoni

    Zukiene, R; Judickaite, A; Mildaziene, V; Koga, K; Shiratani, M

    FEBS OPEN BIO   12   301 - 301   2022年7月   ISSN:2211-5463

     詳細を見る

  • Growth of Single-Crystalline ZnO Films on 18%-Lattice-Mismatched Sapphire Substrates Using Buffer Layers with Three-Dimensional Islands

    Nakamura, Y; Yamashita, N; Kamataki, K; Okumura, T; Koga, K; Shiratani, M; Itagaki, N

    CRYSTAL GROWTH & DESIGN   22 ( 6 )   3770 - 3777   2022年6月   ISSN:1528-7483 eISSN:1528-7505

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)   出版者・発行元:Crystal Growth and Design  

    Heteroepitaxial growth of single-crystalline zinc oxide (ZnO) films on a c-plane sapphire substrate is an important technology for electronics and optoelectronic devices. Recently, the inverted Stranski-Krastanov (SK) mode has been demonstrated, and it has realized the heteroepitaxial growth of ZnO films on a sapphire substrate by sputtering. In this mode, a 10 nm-thick buffer layer consisting of three-dimensional islands (3D buffer layers) initially forms and relaxes the strain, and then, a two-dimensional ZnO film (2D layer) grows involving small strain. To clarify the correlation between the structural properties of the 3D buffer layers and the 2D layer, we introduce a figure of merit (FOM) of ZnO films: the reciprocal of the product of the full width at half-maximum (FWHM) of the (002) and (101) planes of X-ray rocking curves (XRCs) and root-mean-square (RMS) roughness. We find that the FOM of the 2D layers correlates with the RMS roughness, the in-plane orientation, and the lateral correlation length ζ of the surfaces of the buffer layers. We observe a surprisingly high correlation coefficient of 0.97. Our results imply that on the buffer layers with larger ζ, adatoms more easily reach the thermodynamically favored lattice positions. Thus, high-quality single-crystalline ZnO films, where the (002) plane XRC-FWHM and the RMS roughness are 0.05° and 1.5 nm, respectively, are grown on the buffer layers with a large ζ of 13.7 nm. This finding provides a useful tool for understanding the mechanism of the inverted SK mode.

    DOI: 10.1021/acs.cgd.2c00145

    Web of Science

    Scopus

    researchmap

  • Performance comparison of nitrile-based liquid electrolytes on bifacial dye-sensitized solar cells under low-concentrated light

    Putri, TE; Chawarambwa, FL; Attri, P; Kamataki, K; Itagaki, N; Koga, K; Shiratani, M

    MRS ADVANCES   7 ( 21 )   427 - 432   2022年5月   ISSN:2731-5894 eISSN:2059-8521

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)   出版者・発行元:MRS Advances  

    Abstract: Dye-sensitized solar cell (DSSC) has low power output and efficiency. Even though the low-concentrated light can increase the POUT and power conversion efficiency (PCE) of DSSC, the effect of increase in the cell temperature, particularly electrolyte evaporation, becomes a major concern. In this study, we compared and investigated the performance of acetonitrile (AN-50), propionitrile (PN-50), and 3-metoxy propionitrile (Z-100) as nitrile-based electrolyte under low-concentrated light. The results showed 4–8 times increase in JSC and POUT in all electrolytes. AN-50 demonstrated an improved performance under influence of 2 cm distance concave mirror concentrated light with the highest JSC = 74.21 mA/cm2, POUT = 24.53 mW/cm2, and η = 7.99%. However, the performance of cell with AN-50 and PN-50 started to degrade within 3 h of measurement. In contrast, Z-100 displayed performance stability during 4 days measurement even with the lowest JSC= 49.98 mA/cm2, POUT = 19.50 mW/cm2, and η = 6.35%. Graphical abstract: [Figure not available: see fulltext.]

    DOI: 10.1557/s43580-022-00270-x

    Web of Science

    Scopus

    researchmap

  • Epitaxial growth of Zn1−xMgxO films on sapphire substrates via inverted Stranski-Krastanov mode using magnetron sputtering

    Takahashi, D; Yamashita, N; Yamashita, D; Okumura, T; Kamataki, K; Koga, K; Shiratani, M; Itagaki, N

    MRS ADVANCES   7 ( 20 )   415 - 419   2022年2月   ISSN:2731-5894 eISSN:2059-8521

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)   出版者・発行元:MRS Advances  

    We have succeeded in epitaxial growth of high-quality Zn1−xMgxO films of x = 0.04–0.33 on 18%-lattice mismatched sapphire substrates using magnetron sputtering. The films have grown in inverted Stranski-Krastanov (inverted SK) mode, where a buffer layer consisting of three-dimensional islands initially forms and a relaxed two-dimensional layer subsequently grows on the buffer layer. The resultant films have flat surfaces with root-mean-square roughness of 0.43–0.75 nm and are of high-crystal qualities even for large Mg contents; the full widths at half maximum of (0002) x-ray rocking curves are 0.05° (x = 0.33) and 0.07° (x = 0.14). Furthermore, we observed that the optical absorption edge shifts continuously toward the shorter wavelength with increasing x, and the band gap has been tuned from 3.5 to 4.3 eV. These results show that the inverted SK mode is useful for fabricating high-quality Zn1−xMgxO films with wide-range tunability of band gaps. Graphical abstract: [Figure not available: see fulltext.]

    DOI: 10.1557/s43580-022-00234-1

    Web of Science

    Scopus

    researchmap

    その他リンク: https://link.springer.com/article/10.1557/s43580-022-00234-1/fulltext.html

  • Outcomes of Pulsed Electric Fields and Nonthermal Plasma Treatments on Seed Germination and Protein Functions

    Attri, P; Okumura, T; Koga, K; Shiratani, M; Wang, DY; Takahashi, K; Takaki, K

    AGRONOMY-BASEL   12 ( 2 )   2022年2月   eISSN:2073-4395

     詳細を見る

    記述言語:その他   出版者・発行元:Agronomy  

    To meet the needs of the hungry population, it is critical to boost agricultural product production while minimizing contaminated waste. The use of two nonthermal technologies, pulsed electric field (PEF) and nonthermal plasma (NTP), is increasing every day. As both PEF and NTP are relatively newer areas, there is limited knowledge about these two technologies and their modes of action. Studies showed that PEF treatment on the plant seeds helps germination and seedling growth. The positive impact of PEF intensity is highly dependent on the seed coat type and plant species. Another nonthermal technology, NTP, affects seed germination, seedling growth, yield, and resilience to abiotic stress when generated at varying pressures with and without different feed gases. Early germination, germination rate, and germination percentage were all improved when the seedlings were treated with NTP. Similarly to the PEF treatment, NTP had a negative or no effect on germination. This review examined the effects of PEF and NTP on seed germination and ana-lyzed the situation and mechanism behind the positive or negative effect. Deactivation of proteins and enzymes to extend the shelf life of beverages is another prominent application of PEF and NTP. The interaction of PEF and NTP with proteins aids in understanding the microscopic mechanism of these technologies. Therefore, we covered in this review the potential structural and functional changes in proteins/enzymes as a result of PEF and NTP, as well as a comparison of the benefits and drawbacks of these two technologies.

    DOI: 10.3390/agronomy12020482

    Web of Science

    Scopus

    researchmap

  • Functional nitrogen science based on plasma processing: quantum devices, photocatalysts and activation of plant defense and immune systems

    Kaneko, T; Kato, H; Yamada, H; Yamamoto, M; Yoshida, T; Attri, P; Koga, K; Murakami, T; Kuchitsu, K; Ando, S; Nishikawa, Y; Tomita, K; Ono, R; Ito, T; Ito, AM; Eriguchi, K; Nozaki, T; Tsutsumi, T; Ishikawa, K

    JAPANESE JOURNAL OF APPLIED PHYSICS   61 ( SA )   SA0805 - SA0805   2022年1月   ISSN:0021-4922 eISSN:1347-4065

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)   出版者・発行元:Japanese Journal of Applied Physics  

    <title>Abstract</title>
    Nitrogen is a very common element, comprising approximately 78% of Earth’s atmosphere, and is an important component of various electronic devices while also being essential for life. However, it is challenging to directly utilize dinitrogen because of the highly stable triple bond in this molecule. The present review examines the use of non-equilibrium plasmas to generate controlled electron impacts as a means of generating reactive nitrogen species (RNS) with high internal energy values and extremely short lifetimes. These species include ground state nitrogen atoms, excited nitrogen atoms, etc. RNS can subsequently react with oxygen and/or hydrogen to generate new highly reactive compounds and can also be used to control various cell functions and create new functional materials. Herein, plasma-processing methods intended to provide RNS serving as short-lived precursors for a range of applications are examined in detail.

    DOI: 10.35848/1347-4065/ac25dc

    Web of Science

    Scopus

    researchmap

    その他リンク: https://iopscience.iop.org/article/10.35848/1347-4065/ac25dc/pdf

  • Effect of gas flow rate and discharge volume on CO<sub>2</sub> methanation with plasma catalysis 査読

    Toko, S; Ideguchi, M; Hasegawa, T; Okumura, T; Kamataki, K; Takenaka, K; Koga, K; Shiratani, M; Setsuhara, Y

    JAPANESE JOURNAL OF APPLIED PHYSICS   61 ( SI )   2022年1月   ISSN:0021-4922 eISSN:1347-4065

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Japanese Journal of Applied Physics  

    CO2 methanation can be a key technology for realizing a sustainable society. CH4 is used as an energy carrier and raw material for chemical products, thereby contributing to the reduction of CO2 emissions. Methanation with plasma catalysis lowers the process temperature, which can improve the throughput and stability. In this study, we investigated the effect of the gas flow rate and the discharge volume on CO2 methanation, using a low-pressure capacitively coupled plasma reactor. Higher gas flow rates can increase the rate of CO2 throughput, but the CH4 selectivity decreases owing to the reduced transportation rate of the reactants to the catalyst surface. Increasing the discharge volume is effective in improving the transportation rate. This study suggested that the structure of the reactor significantly affects the CH4 generation rate.

    DOI: 10.35848/1347-4065/ac4822

    Web of Science

    Scopus

    researchmap

  • Improved luminescence performance of Yb<SUP>3+</SUP>-Er<SUP>3+</SUP>-Zn<SUP>2+</SUP>: Y<sub>2</sub>O<sub>3</sub> phosphor and its application to solar cells

    Chawarambwa, FL; Putri, TE; Hwang, SH; Attri, P; Kamataki, K; Itagaki, N; Koga, K; Nakamura, D; Shiratani, M

    OPTICAL MATERIALS   123   2022年1月   ISSN:0925-3467 eISSN:1873-1252

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)   出版者・発行元:Optical Materials  

    Upconversion materials (UC) can convert low-energy photons into visible light and, therefore, can be incorporated in solar cells to increase the absorption of visible light. This study synthesized UC nanophosphors Yb3+, Er3+: Y2O3 and Yb3+, Er3+, Zn2+: Y2O3 by a simple co-precipitation method for application in dye-sensitized solar cells (DSSCs). The impact of the enhancement in the concentration of Zn2+ on the photoluminescence (PL) and color point of the synthesized nanophosphors was also investigated. The synthesized nanophosphors emitted intense red and weaker green emissions upon excitation at 980 nm. The incorporation of Zn2+ to the Yb3+, Er3+: Y2O3 nanophosphors leads to color tunability in the red and yellow regions. Furthermore, the synthesized nanophosphors were incorporated into the DSSC photoanode to form a TiO2-UC-based DSSC for converting near-infrared (NIR) into visible light. We observed that the TiO2-UC-based DSSC showed an enhancement ratio in current density and power conversion efficiency of 17.4% and 16.6%, respectively, compared to the bare TiO2-based DSSC. These results reveal that UC-based Yb3+, Er3+, Zn2+: Y2O3 nanophosphors are useful in improving the efficiency of DSSCs and in color tunability applications.

    DOI: 10.1016/j.optmat.2021.111928

    Web of Science

    Scopus

    researchmap

  • A Plasma Enhanced CVD Technology for Solving Issues on Sidewall Deposition in Trenches and Holes

    Shiratani, M; Kamataki, K; Koga, K

    2022 17TH INTERNATIONAL MICROSYSTEMS, PACKAGING, ASSEMBLY AND CIRCUITS TECHNOLOGY CONFERENCE (IMPACT)   2022-October   2022年   ISSN:2150-5934 ISBN:978-1-6654-5221-2

     詳細を見る

    出版者・発行元:Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT  

    EUV lithography drives the miniaturization of semiconductors for higher integration, and semiconductor manufacturing is in transition from two-dimensional (2D) to three-dimensional (3D) structures [1], which plays a crucial role in supporting packaging for edge computing such as Internet-of-Things (loT). 3D power scaling enables higher integration without reducing the size of transistors by arranging them vertically instead of horizontally. One of the important processes in manufacturing 3D structured semiconductors is the formation of films on sidewalls of trenches and holes. Such films are often deposited by plasma enhanced chemical vapor deposition (PECVD) [2]. Due to the gas decomposition by plasma, PECVD method archives a high deposition rate of good quality films at low temperature, which is an advantage over other deposition methods such as atomic layer deposition (ALD) [3]. However, this does not fully meet the actual manufacturing requirements. For instance, SiO2 dielectric films deposited by PECVD usually have low coverage and poor film quality on sidewall of trenches and holes compared to films on surface. Ion impact is one of the most important factors contributing to improving step coverage and film quality in trenches and holes. One parameter that characterized ion impact is the ion energy distribution function (IEDF) and ion angular distribution (IADF) [4], [5]. There are strong needs for low temperature deposition in trenches and holes.

    DOI: 10.1109/IMPACT56280.2022.9966682

    Web of Science

    Scopus

  • Plasma Synthesis of Silicon Nanoparticles: From Molecules to Clusters and Nanoparticle Growth

    Nunomura, S; Kamataki, K; Nagai, T; Misawa, T; Kawai, S; Takenaka, K; Uchida, G; Koga, K

    IEEE OPEN JOURNAL OF NANOTECHNOLOGY   3   94 - 100   2022年   eISSN:2644-1292

     詳細を見る

    掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE Open Journal of Nanotechnology  

    Plasma nanotechnology is widely used for nanoscale etching, dopant implantation and thin-film deposition for state-of-the-art semiconductor devices. Such a plasma nanotechnology has another interesting aspect of synthesizing nanoparticles, in a controlled manner of atomic composition, structure and those size. Here, we present the polymerization and growth of silicon nanoparticles from a molecular level to 10 nm-particles in hydrogen diluted silane plasmas. The polymerization and growth are experimentally studied using various plasma diagnostic tools. The results indicate that nanoparticles are rapidly formed via gas-phase reactions in a low-density plasma comprising high-energy electrons. The growth kinetics and the modification of plasma properties are discussed in terms of gas-phase reactions, charging and coagulation of nanoparticles.

    DOI: 10.1109/OJNANO.2022.3209995

    Web of Science

    Scopus

    researchmap

  • Control of magnetic transition of ZnO:Co grown by RF-sputter using post-Annealing

    Nurut A.M., Yamashita N., Kamataki K., Koga K., Itagaki N., Shiratani M.

    2022 International Conference on Informatics Electrical and Electronics, ICIEE 2022 - Proceedings   2022年   ISBN:9781665486224

     詳細を見る

    出版者・発行元:2022 International Conference on Informatics Electrical and Electronics, ICIEE 2022 - Proceedings  

    Ferromagnetic semiconductor has attracted much attention for the application of spintronic devices, which will bring next generation of the information technology. Cobalt-doped Zinc Oxides (ZnO: Co) is strong candidate of this material group. The ZnO: Co films were grown on a silicon substrate (100) at room temperature by radio-frequency (rf) sputtering deposition and followed by post-Annealing treatment for 3 hours at 400°C and 800°C in the air. The transition from paramagnetic to ferromagnetic occurs after annealing at 400°C, and the properties return to paramagnetic like as-deposition when the temperature rises to 800°C. The XRD measurement of ZnO: Co films exhibited a wurtzite structure in the (002) plane and was free from secondary phases. Then, post-Annealing at 400°C due to shift peak and decrease oxygen element, meanwhile the crystallinity significantly up to 800°C.

    DOI: 10.1109/ICIEE55596.2022.10010108

    Scopus

  • Impact of seed color and storage time on the radish seed germination and sprout growth in plasma agriculture

    Pankaj Attri, Kenji Ishikawa, Takamasa Okumura, Kazunori Koga, Masaharu Shiratani, Vida Mildaziene

    Scientific Reports   11 ( 1 )   2021年12月

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1038/s41598-021-81175-x

  • Performance Characteristics of Bifacial Dye-Sensitized Solar Cells with a V-Shaped Low-Concentrating Light System

    Tika E. Putri, Fadzai L. Chawarambwa, Min Kyu Son, Pankaj Attri, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    ACS Applied Energy Materials   4 ( 12 )   13410 - 13414   2021年12月

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1021/acsaem.1c02774

  • Impact of Reactive Oxygen and Nitrogen Species Produced by Plasma on Mdm2–p53 Complex

    22 ( 17 )   9585 - 9585   2021年9月

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)  

    The study of protein–protein interactions is of great interest. Several early studies focused on the murine double minute 2 (Mdm2)–tumor suppressor protein p53 interactions. However, the effect of plasma treatment on Mdm2 and p53 is still absent from the literature. This study investigated the structural changes in Mdm2, p53, and the Mdm2–p53 complex before and after possible plasma oxidation through molecular dynamic (MD) simulations. MD calculation revealed that the oxidized Mdm2 bounded or unbounded showed high flexibility that might increase the availability of tumor suppressor protein p53 in plasma-treated cells. This study provides insight into Mdm2 and p53 for a better understanding of plasma oncology.

    DOI: 10.3390/ijms22179585

  • Comparison between Ar+CH4 Cathode and Anode Coupled Capacitively Coupled Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Carbon Films 査読 国際誌

    S. H. Hwang, R. Iwamoto, T. Okumura, K. Kamataki, N. Itagaki, K. Koga, T. Nakatani, M. Shiratani

    Thin Solid Films   729   2021年7月

     詳細を見る

    記述言語:英語  

    DOI: 10.1016/j.tsf.2021.138701

  • Highly efficient and transparent counter electrode for application in bifacial solar cells

    Fadzai Lesley Chawarambwa, Tika Erna Putri, Pankaj Attri, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    Chemical Physics Letters   768   2021年4月

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.cplett.2021.138369

  • Impact of atmospheric pressure plasma treated seeds on germination, morphology, gene expression and biochemical responses

    Pankaj Attri, Kazunori Koga, Takamasa Okumura, Masaharu Shiratani

    Japanese Journal of Applied Physics   60 ( 4 )   2021年4月

     詳細を見る

    記述言語:その他  

    DOI: 10.35848/1347-4065/abe47d

  • Possible impact of plasma oxidation on the structure of the C-terminal domain of SARS-CoV-2 spike protein: A computational study

    Pankaj Attri, Kazunori Koga, Masaharu Shiratani

    Applied Physics Express   14 ( 2 )   2021年2月

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)  

    DOI: 10.35848/1882-0786/abd717

  • Alterations of DNA Methylation Caused by Cold Plasma Treatment Restore Delayed Germination of Heat-Stressed Rice (Oryza sativa L.) Seeds 査読 国際誌

    C. Suriyasak, K. Hatanaka, H. Tanaka, T. Okumura, D. Yamashita, P. Attri, K. Koga, M. Shiratani, N. Hamaoka, Y. Ishibashi

    ACS Agric. Sci. Technol.   1 ( 1 )   2021年2月

     詳細を見る

    記述言語:その他  

    DOI: 10.1021/acsagscitech.0c00070

  • Impact of surface morphologies of substrates on the epitaxial growth of magnetron-sputtered (ZnO) x (InN)1-x films

    Ryota Narishige, Kentaro Kaneshima, Daisuke Yamashita, Kunihiro Kamataki, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

    Japanese Journal of Applied Physics   60 ( SA )   SAAB02 - SAAB02   2021年1月

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)  

    DOI: 10.35848/1347-4065/abba0c

  • Time of Flight Size Control of Carbon Nanoparticles Using Ar+CH4 Multi-Hollow Discharge Plasma Chemical Vapor Deposition Method

    Sung Hwa Hwang, Kazunori Koga, Yuan Hao, Pankaj Attri, Takamasa Okumura, Kunihiro Kamataki, Naho Itagaki, Masaharu Shiratani, Jun-Seok Oh, Susumu Takabayashi, Tatsuyuki Nakatani

    Processes   9 ( 1 )   2 - 2   2020年12月

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)  

    DOI: 10.3390/pr9010002

  • Experimental identification of the reactive oxygen species transported into a liquid by plasma irradiation

    Toshiyuki Kawasaki, Kazunori Koga, Masaharu Shiratani

    Japanese Journal of Applied Physics   59 ( 11 )   110502 - 110502   2020年11月

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)  

    DOI: 10.35848/1347-4065/abc3a1

  • Low-stress diamond-like carbon films containing carbon nanoparticles fabricated by combining rf sputtering and plasma chemical vapor deposition

    Sung-Hwa Hwang, Takamasa Okumura, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Tatsuyuki Nakatani, Masaharu Shiratani

    Japanese Journal of Applied Physics   59 ( 10 )   100906 - 100906   2020年10月

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)  

    DOI: 10.35848/1347-4065/abbb20

  • Plasma agriculture from laboratory to farm: A review

    Pankaj Attri, Kenji Ishikawa, Takamasa Okumura, Kazunori Koga, Masaharu Shiratani

    Processes   8 ( 8 )   2020年8月

     詳細を見る

    記述言語:その他  

    DOI: 10.3390/PR8081002

  • Influence of osmolytes and ionic liquids on the Bacteriorhodopsin structure in the absence and presence of oxidative stress: A combined experimental and computational study 査読

    Pankaj Attri, Jamoliddin Razzokov, Maksudbek Yusupov, Kazunori Koga, Masaharu Shiratani, Annemie Bogaerts

    International Journal of Biological Macromolecules   148   657 - 665   2020年4月

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.ijbiomac.2020.01.179

  • Progress in photovoltaic performance of organic/inorganic hybrid solar cell based on optimal resistive Si and solvent modified poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) junction

    Hyunwoong Seo, Daisuke Sakamoto, Hakutatsu Chou, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    Progress in Photovoltaics: Research and Applications   26 ( 2 )   145 - 150   2020年2月

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1002/pip.2961

  • Effect of hydrogen dilution on the silicon cluster volume fraction of a hydrogenated amorphous silicon film prepared using plasma-enhanced chemical vapor deposition 査読

    Yeonwon Kim, Kazunori Koga, Masaharu Shiratani

    Current Applied Physics   20 ( 1 )   191 - 195   2020年1月

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.cap.2019.11.001

  • Local supply of reactive oxygen species into a tissue model by atmospheric-pressure plasma-jet exposure 査読

    Toshiyuki Kawasaki, Fumiaki Mitsugi, Kazunori Koga, Masaharu Shiratani

    Journal of Applied Physics   125   2019年6月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Local supply of reactive oxygen species into a tissue model by atmospheric-pressure plasma-jet exposure
    © 2019 Author(s). The supply of reactive oxygen species (ROSs) into a tissue by plasmas must be controlled for the safe and effective use of plasma technologies in biomedical applications. In this study, the two-dimensional distributions of ROSs after passing through an agarose tissue model by the plasma-jet exposures were visualized using a KI-starch gel reagent to evaluate the local ROS supply. Partial ROS supply on the tissue model surface induced the local ROS supply in a pointlike shape just under the plasma-exposed spot. The O3-containing gas exposure without direct plasma contact could not induce the local ROS supply. Therefore, the local ROS supply was assumed to be induced by plasma-specific effects. However, the results also indicated that the plasma jet coming in direct contact with the tissue model surface did not necessarily induce the local ROS supply. The effects of the tissue model thickness on the local ROS supply were also studied; the local ROS supply could penetrate to a depth of 2 mm in the tissue model under the given experimental conditions.

    DOI: 10.1063/1.5091740

  • Controlling feeding gas temperature of plasma jet with Peltier device for experiments with fission yeast 査読

    Shinji Yoshimura, Mitsutoshi Aramaki, Yoko Otsubo, Akira Yamashita, Kazunori Koga

    Japanese Journal of Applied Physics   58 ( SE )   SEEG03 - SEEG03   2019年6月

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/1347-4065/ab1473

  • Progress and perspectives in dry processes for leading-edge manufacturing of devices: toward intelligent processes and virtual product development 査読

    Taku Iwase, Yoshito Kamaji, Song Yun Kang, Kazunori Koga, Nobuyuki Kuboi, Moritaka Nakamura, Nobuyuki Negishi, Tomohiro Nozaki, Shota Nunomura, Daisuke Ogawa, Mitsuhiro Omura, Tetsuji Shimizu, Kazunori Shinoda, Yasushi Sonoda, Haruka Suzuki, Kazuo Takahashi, Takayoshi Tsutsumi, Kenichi Yoshikawa, Tatsuo Ishijima, Kenji Ishikawa

    Japanese Journal of Applied Physics   58 ( SE )   SE0804 - SE0804   2019年6月

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/1347-4065/ab163b

  • Progress and perspectives in dry processes for nanoscale feature fabrication: toward intelligent processes and virtual product development 査読

    Taku Iwase, Yoshito Kamaji, Song Yun Kang, Kazunori Koga, Nobuyuki Kuboi, Moritaka Nakamura, Nobuyuki Negishi, Tomohiro Nozaki, Shota Nunomura, Daisuke Ogawa, Mitsuhiro Omura, Tetsuji Shimizu, Kazunori Shinoda, Yasushi Sonoda, Haruka Suzuki, Kazuo Takahashi, Takayoshi Tsutsumi, Kenichi Yoshikawa, Tatsuo Ishijima, Kenji Ishikawa

    Japanese Journal of Physics   Vol. 58   pp. SE0804(21pp)   2019年5月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Progress and perspectives in dry processes for nanoscale feature fabrication: toward intelligent processes and virtual product development

  • 大気圧非平衡He プラズマジェットと溶液との相互作用に関する可視化研究 招待

    内田 儀一郎, 竹中 弘祐, 川崎 敏之, 古閑 一憲, 白谷 正治, 節原 裕一

    スマートプロセス学会誌   8 ( 2 )   58 - 63   2019年3月

     詳細を見る

    記述言語:日本語  

  • Sputter Epitaxy of (ZnO)x(InN)1-x films on Lattice-mismatched Sapphire Substrate 査読

    Nanoka Miyahara, Seichi Urakawa, Daisuke Yamashita, Kunihiro Kamataki, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

    MRS Advances   2019年1月

     詳細を見る

    記述言語:その他  

    Sputter Epitaxy of (ZnO)x(InN)1-x films on Lattice-mismatched Sapphire Substrate
    We have recently developed a novel semiconductor, (ZnO)x(InN)1-x (abbreviated to ZION). In this study, we have succeeded in direct epitaxial growth of ZION films on 19?21&#37;-lattice-mismatched c-plane sapphire by radio-frequency (RF) magnetron sputtering. X-ray diffraction analysis showed that there is no epitaxial relationship between ZION films fabricated at room-temperature (RT) and the sapphire substrates, while the films fabricated at 450oC grow epitaxially on the sapphire substrates. From the analysis of time evolution of the surface morphology, the process for the epitaxial growth of ZION on sapphire is found to consist of three stages. They are (i) initial nucleation of ZION crystallites with crystal axis aligned to the sapphire substrate, (ii) island growth from the initially formed nuclei and subsequent nucleation (secondary nucleation) of ZION crystallites, and (iii) lateral growth of ZION islands originated from initially formed nuclei. On the other hand, non-epitaxial ZION films fabricated at RT just grow in 3D mode. From these results, we conclude that the substrate temperature is the key to control of nucleation and subsequent epitaxial growth of ZION films on the lattice-mismatched substrate.

    DOI: 10.1557/adv.2019.17

  • Spatial correlation between density fluctuations of high energy electrons and nanoparticles in amplitude modulated capactively coupled plasma 査読

    R. Zhou, K. Mori, H. Ohtomo, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    J. Phys.: Conf. Ser.   2019年1月

     詳細を見る

    記述言語:その他  

    Spatial correlation between density fluctuations of high energy electrons and nanoparticles in amplitude modulated capactively coupled plasma

  • Room-temperature fabrication of amorphous In2O3:Sn films with high electron mobility via nitrogen mediated amorphization 査読

    K. Imoto, H. Wang, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    J. Phys.: Conf. Ser.   2019年1月

     詳細を見る

    記述言語:その他  

    Room-temperature fabrication of amorphous In2O3:Sn films with high electron mobility via nitrogen mediated amorphization

  • Effects of nitrogen impurity on zno crystal growth on Si substrates 査読

    Soichiro Muraoka, Lyu Jiahao, Daisuke Yamashita, Kunihiro Kamataki, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

    MRS Advances   2019年1月

     詳細を見る

    記述言語:その他  

    Effects of nitrogen impurity on zno crystal growth on Si substrates
    Effects of nitrogen impurity on ZnO crystal growth on Si substrates have been investigated. The quantitative analysis on the surface morphology deriving height-height correlation function indicates that adsorbed nitrogen atoms suppress the secondary nucleation and enhance adatom migration. The resultant films have smooth surface as well as large grain size up to 24 nm even for small thickness of 10 nm. ZnO films fabricated by using such films as buffer layers possess high crystal quality, where the full width at half maximum of (002) rocking curve is 0.68°, one-fourth of that for films fabricated without nitrogen.

    DOI: 10.1557/adv.2019.28

  • Photoluminescence of (ZnO)0.82(InN)0.18 films -Incident light angle dependence- 査読

    N. Miyahara, K. Iwasaki, D. Yamashita, D. Nakamura, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    Mater. Sci. Forum   941   2099 - 2103   2018年12月

     詳細を見る

    記述言語:その他  

    Photoluminescence of (ZnO)0.82(InN)0.18 films -Incident light angle dependence-
    We have fabricated a new semiconducting material, (ZnO)x(InN)1-x (called ZION hereafter), which is a pseudo-binary alloy of wurtzite ZnO (band gap: 3.4 eV) and wurtzite InN (band gap: 0.7 eV). We have succeeded in fabricating epitaxial (ZnO)0.82(InN)0.18 films on ZnO templates by RF magnetron sputtering. XRD measurements show that the full width at half maximum of the rocking curves from (101) plane and (002) plane are significantly small of 0.11 ? and 0.16 ?, respectively, indicating good in-plane and out-of-plane crystal alignment. High crystal quality of the films was also proved by deducing the defect density from XRD analysis showing that the edge type dislocation density is low of 8.2×108 cm-2. Furthermore, we observed room temperature photoluminescence from ZION films as a parameter of incident angle of He-Cd laser light. The results indicate that an emission peak of 2.79 eV is originated from ZION.

    DOI: 10.4028/www.scientific.net/MSF.941.2099

  • Impact of Gamma rays and DBD plasma treatments on wastewater treatment

    Pankaj Attri, Fumiyoshi Tochikubo, Ji Hoon Park, Eun Ha Choi, Kazunori Koga, Masaharu Shiratani

    Scientific Reports   8 ( 1 )   2018年12月

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1038/s41598-018-21001-z

  • Cross correlation analysis of fluctuation of interactions between nanoparticles and low pressure reactive plasmas 査読

    R. Zhou, K. Mori, H. Ohtomo, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    Mater. Sci. Forum   941   2104 - 2108   2018年12月

     詳細を見る

    記述言語:その他  

    Cross correlation analysis of fluctuation of interactions between nanoparticles and low pressure reactive plasmas
    We analyzed fluctuations of interactions between low pressure reactive plasmas and nanoparticles formed in the plasmas, to shed light on origins of fluctuations of interactions and to control fluctuations in plasma processes. Spatiotemporal fluctuations of nanoparticle density develop not only in a linear way but also in a nonlinear way. The results suggest nonlinear interactions potentially induce spatial and temporal process fluctuations.

    DOI: 10.4028/www.scientific.net/MSF.941.2104

  • Effects of sputtering pressure on (ZnO)<inf>x</inf>(InN)<inf>1-x</inf> crystal film growth at 450?C 査読

    N. Itagaki, K. Takeuchi, N. Miyahara, K. Imoto, H. Seo, K. Koga, M. Shiratani

    Mater. Sci. Forum   941   2093 - 2098   2018年12月

     詳細を見る

    記述言語:その他  

    Effects of sputtering pressure on (ZnO)<inf>x</inf>(InN)<inf>1-x</inf> crystal film growth at 450?C
    We studied effects of sputtering pressure on growth of (ZnO)x(InN)1-x crystal films deposited at 450°C by rf magnetron sputtering. Epitaxial growth of (ZnO)x(InN)1-x films was realized on single-crystalline ZnO template. X-ray diffraction measurements show that full width at half maximum of the rocking curves from the (101) plane of the films reaches minimum value of 0.11? at 0.5 Pa. The sputtering gas pressure is a key tuning knob for controlling the crystal quality of ZION films.

    DOI: 10.4028/www.scientific.net/MSF.941.2093

  • Particle behavior and its contribution to film growth in a remote silane plasma

    Yeonwon Kim, Kazunori Koga, Masaharu Shiratani

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films   36 ( 5 )   2018年9月

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1116/1.5037539

  • The effect of the H<inf>2</inf>/(H<inf>2</inf> + Ar) flow-rate ratio on hydrogenated amorphous carbon films grown using Ar/H<inf>2</inf>/C<inf>7</inf>H<inf>8</inf>plasma chemical vapor deposition

    660   891 - 898   2018年8月

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)  

    © 2018 Elsevier B.V. To produce hydrogenated amorphous carbon (a-C:H) films with high mass density at a high deposition rate and low substrate bias voltage, we deposited these films on a Si substrate by plasma chemical vapor deposition, using toluene as a source compound and varying the gas flow-rate ratio of H2/(H2+ Ar). By decreasing the gas flow-rate ratio from 55&#37; to 11&#37;, the hydrogen content in the films decreased, and the density of sp3carbon atoms in the films increased, whereas their surface roughness increased. At the gas flow-rate ratio of 11&#37;, we produced a-C:H films with a high bulk density of 1830 kg/m3at a high deposition rate of 81.1 nm/min.

    DOI: 10.1016/j.tsf.2018.02.035

  • Low-Pressure Methanation of CO2 Using a Plasma–Catalyst System

    10 ( 8 )   1087 - 1090   2018年8月

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1166/sam.2018.3303

  • Transportation of reactive oxygen species in a tissue phantom after plasma irradiation

    Toshiyuki Kawasaki, Gouya Kuroeda, Ryuhei Sei, Masaaki Yamaguchi, Reishi Yoshinaga, Riho Yamashita, Hikaru Tasaki, Kazunori Koga, Masaharu Shiratani

    Japanese Journal of Applied Physics   57 ( 1 )   2018年1月

     詳細を見る

    記述言語:その他   掲載種別:研究論文(その他学術会議資料等)  

    DOI: 10.7567/JJAP.57.01AG01

  • 色素増感太陽電池のポリマー対向電極における触媒反応の活性化 査読

    徐鉉雄, 板垣奈穂, 古閑一憲, 白谷正治

    信学技報   117   27 - 29   2017年11月

     詳細を見る

    記述言語:その他  

    色素増感太陽電池の対向電極は電解液との酸化還元反応の触媒として務め、太陽電池の性能に(特に、充填率に)重要な役割を果たす。カーボン、グラフェン、カーボンナノチューブ、遷移金属及びその化合物、ポリマーなど多くの材料が色素増感太陽電池の白金対向電極を代替するため、研究されているが、高価な白金は依然としてドミナントな対向電極材料として使われている。本研究では低価のポリマーを用いた色素増感太陽電池の対向電極を研究した。ここではPoly(3、4-ethylenedioxythiophene):poly(4-styrenesulfonate)(PEDOT:PSS)を対向電極材料として使用した。以前研究と同様に、PEDOT:PSS対向電極を用いた色素増感太陽電池の最初効率は低かった。特に、相対的に不十分な触媒反応のため、充填率が大きく低下された結果を示した。PEDOT:PSS対向電極の触媒反応の向上のため、本研究はナノ粒子を導入した。ナノ粒子による対向電極の表面積の増加は触媒反応の活性化とともに色素増感太陽電池の効率を向上させた。結果的に、ナノ粒子を含めたポリマーナノコンポジット対向電極は白金対向電極以上の触媒反応とともに、さらに高い効率を示した。

  • 低温プラズマによるナノ粒子の合成と太陽電池への応用 査読

    古閑一憲, 徐鉉雄, 板垣奈穂, 白谷正治

    信学技報   117   5 - 8   2017年11月

     詳細を見る

    記述言語:その他  

    我々は、マルチホロー放電プラズマCVD法を開発し、サイズ・構造制御した結晶Siナノ粒子の連続作製に成功した。この方法では、サイズ・構造制御の重要パラメタはガス圧力とSiH4ガスに対するH2希釈率であることを明らかにした。結晶Siナノ粒子を用いて作製したショットキセルの量子効率がバンドギャップの3倍以上の光子エネルギー入射で100&#37;以上を示し、多重励起子生成型太陽電池の原理検証に成功した。また、結晶Siナノ粒子増感太陽電池として世界最高性能の太陽電池を実現した。加えてPtに代わる低コストポリマー対向電極材料の特性改善にSiナノ粒子が有効であることを明らかにした。

  • Low temperature rapid formation of Au-induced crystalline Ge films using sputtering deposition

    Sota Tanami, Daiki Ichida, Shinji Hashimoto, Hyunwoong Seo, Daisuke Yamashita, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    THIN SOLID FILMS   641   59 - 64   2017年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.tsf.2017.02.067

  • Hysteresis in volume fraction of clusters incorporated into a-Si:H films deposited by SiH 4 plasma chemical vapor deposition

    Susumu Toko, Yoshihiro Torigoe, Kimitaka Keya, Takashi Kojima, Hyunwoong Seo, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    Surface and Coatings Technology   326   388 - 394   2017年10月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.surfcoat.2017.01.034

  • Extension of the operational regime of the LHD towards a deuterium experiment

    Y. Takeiri, T. Morisaki, M. Osakabe, M. Yokoyama, S. Sakakibara, H. Takahashi, Y. Nakamura, T. Oishi, G. Motojima, S. Murakami, K. Ito, A. Ejiri, S. Imagawa, S. Inagaki, M. Isobe, S. Kubo, S. Masamune, T. Mito, I. Murakami, K. Nagaoka, K. Nagasaki, K. Nishimura, M. Sakamoto, R. Sakamoto, T. Shimozuma, K. Shinohara, H. Sugama, K. Y. Watanabe, J. W. Ahn, N. Akata, T. Akiyama, N. Ashikawa, J. Baldzuhn, T. Bando, E. Bernard, F. Castejon, H. Chikaraishi, M. Emoto, T. Evans, N. Ezumi, K. Fujii, H. Funaba, M. Goto, T. Goto, D. Gradic, Y. Gunsu, S. Hamaguchi, H. Hasegawa, Y. Hayashi, C. Hidalgo, T. Higashiguchi, Y. Hirooka, Y. Hishinuma, R. Horiuchi, K. Ichiguchi, K. Ida, T. Ido, H. Igami, K. Ikeda, S. Ishiguro, R. Ishizaki, A. Ishizawa, A. Ito, Y. Ito, A. Iwamoto, S. Kamio, K. Kamiya, O. Kaneko, R. Kanno, H. Kasahara, D. Kato, T. Kato, K. Kawahata, G. Kawamura, M. Kisaki, S. Kitajima, W. H. Ko, M. Kobayashi, S. Kobayashi, T. Kobayashi, K. Koga, A. Kohyama, R. Kumazawa, J. H. Lee, D. Lopez-Bruna, R. Makino, S. Masuzaki, Y. Matsumoto, H. Matsuura, O. Mitarai, H. Miura, J. Miyazawa, N. Mizuguchi, C. Moon, S. Morita, T. Moritaka, K. Mukai, T. Muroga, S. Muto, T. Mutoh, T. Nagasaka, Y. Nagayama, N. Nakajima, Y. Nakamura, H. Nakanishi, H. Nakano, M. Nakata, Y. Narushima, D. Nishijima, A. Nishimura, S. Nishimura, T. Nishitani, M. Nishiura, Y. Nobuta, H. Noto, M. Nunami, T. Obana, K. Ogawa, S. Ohdachi, M. Ohno, N. Ohno, H. Ohtani, M. Okamoto, Y. Oya, T. Ozaki, B. J. Peterson, M. Preynas, S. Sagara, K. Saito, H. Sakaue, A. Sanpei, S. Satake, M. Sato, T. Saze, O. Schmitz, R. Seki, T. Seki, I. Sharov, A. Shimizu, M. Shiratani, M. Shoji, C. Skinner, R. Soga, T. Stange, C. Suzuki, Y. Suzuki, S. Takada, K. Takahata, A. Takayama, S. Takayama, Y. Takemura, Y. Takeuchi, H. Tamura, N. Tamura, H. Tanaka, K. Tanaka, M. Tanaka, T. Tanaka, Y. Tanaka, S. Toda, Y. Todo, K. Toi, M. Toida, M. Tokitani, T. Tokuzawa, H. Tsuchiya, T. Tsujimura, K. Tsumori, S. Usami, J. L. Velasco, H. Wang, T. -H. Watanabe, T. Watanabe, J. Yagi, M. Yajima, H. Yamada, I. Yamada, O. Yamagishi, N. Yamaguchi, Y. Yamamoto, N. Yanagi, R. Yasuhara, E. Yatsuka, N. Yoshida, M. Yoshinuma, S. Yoshimura, Y. Yoshimura

    NUCLEAR FUSION   57 ( 10 )   2017年10月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1088/1741-4326/aa7fc2

  • Impact of an ionic liquid on protein thermodynamics in the presence of cold atmospheric plasma and gamma rays

    Pankaj Attri, Minsup Kim, Eun Ha Choi, Art E. Cho, Kazunori Koga, Masaharu Shiratani

    PHYSICAL CHEMISTRY CHEMICAL PHYSICS   19 ( 37 )   25277 - 25288   2017年10月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1039/c7cp04083k

  • Performance enhancement of quantum dot-sensitized solar cells based on polymer nano-composite catalyst

    Hyunwoong Seo, Chandu V. V. M. Gopi, Hee-Je Kim, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    ELECTROCHIMICA ACTA   249   337 - 342   2017年9月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.electacta.2017.08.030

  • The protective action of osmolytes on the deleterious effects of gamma rays and atmospheric pressure plasma on protein conformational changes

    Pankaj Attri, Minsup Kim, Thapanut Sarinont, Eun Ha Choi, Hyunwoong Seo, Art E. Cho, Kazunori Koga, Masaharu Shiratani

    SCIENTIFIC REPORTS   7   2017年8月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1038/s41598-017-08643-1

  • 低温プラズマによるナノ粒子の合成と太陽電池への応用 (有機エレクトロニクス)

    古閑 一憲, 徐 鉉雄, 板垣 奈穂, 白谷 正治

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   117 ( 8 )   5 - 8   2017年4月

     詳細を見る

    記述言語:日本語  

  • Densities and Surface Reaction Probabilities of Oxygen and Nitrogen Atoms During Sputter Deposition of ZnInON on ZnO

    Koichi Matsushima, Tomoaki Ide, Keigo Takeda, Masaru Hori, Daisuke Yamashita, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

    IEEE TRANSACTIONS ON PLASMA SCIENCE   45 ( 2 )   323 - 327   2017年3月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1109/TPS.2016.2632124

  • Influence of plasma irradiation on silkworm

    Akira Yonesu, Kazunori Koga, Masaharu Shiratani, Nobuya Hayashi

    Plasma Medicine   7   313 - 320   2017年1月

     詳細を見る

    記述言語:その他  

    Influence of plasma irradiation on silkworm
    © 2017 by Begell House, Inc. Silkworms have recently been proposed as an animal model for safety testing in basic research. We propose using silkworms for in vivo trials of direct plasma treatment. In this study, the influence of plasma irradiation on silkworms was investigated using a non-thermal atmospheric pressure plasma. Silkworm survival rate decreased with increasing low-frequency voltage and plasma irradiation period. Further investigation of the plasma-generated agents (oxygen related radicals, UV light, and charged particles), revealed that the contribution of charged particles significantly increases silkworm mortality.

  • ホッとひといき プラズマのほどよい刺激で植物がスクスク育つ

    古閑 一憲

    応用物理   86 ( 1 )   55 - 58   2017年1月

     詳細を見る

    記述言語:日本語  

  • Effects of nonthermal plasma jet irradiation on the selective production of H2O2 and NO2- in liquid water

    Giichiro Uchida, Atsushi Nakajima, Taiki Ito, Kosuke Takenaka, Toshiyuki Kawasaki, Kazunori Koga, Masaharu Shiratani, Yuichi Setsuhara

    JOURNAL OF APPLIED PHYSICS   120 ( 20 )   2016年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1063/1.4968568

  • Optical Bandgap Energy of Si Nanoparticle Composite Films Deposited by a Multi-Hollow Discharge Plasma Chemical Vapor Deposition Method

    Susumu Toko, Yoshinori Kanemitsu, Hyunwoong Seo, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY   16 ( 10 )   10753 - 10757   2016年10月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1166/jnn.2016.13233

  • Effects of plasma irradiation using various feeding gases on growth of Raphanus sativus L.

    Thapanut Sarinont, Takaaki Amano, Pankaj Attri, Kazunori Koga, Nobuya Hayashi, Masaharu Shiratani

    ARCHIVES OF BIOCHEMISTRY AND BIOPHYSICS   605   129 - 140   2016年9月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.abb.2016.03.024

  • Surface Modification of Polymer Counter Electrode for Low Cost Dye-sensitized Solar Cells

    Hyunwoong Seo, Min-Kyu Son, Shinji Hashimoto, Toshiyuki Takasaki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    ELECTROCHIMICA ACTA   210   880 - 887   2016年8月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.electacta.2016.06.020

  • Effect of Sulfur Doped TiO2 on Photovoltaic Properties of Dye-Sensitized Solar Cells

    Hyunwoong Seo, Sang-Hun Nam, Naho Itagaki, Kazunori Koga, Masaharu Shiratani, Jin-Hyo Boo

    ELECTRONIC MATERIALS LETTERS   12 ( 4 )   530 - 536   2016年7月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1007/s13391-016-4018-8

  • Two-dimensional concentration distribution of reactive oxygen species transported through a tissue phantom by atmospheric-pressure plasma-jet irradiation

    Toshiyuki Kawasaki, Akihiro Sato, Shota Kusumegi, Akihiro Kudo, Tomohiro Sakanoshita, Takuya Tsurumaru, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani

    APPLIED PHYSICS EXPRESS   9 ( 7 )   2016年7月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/APEX.9.076202

  • Correlation between SiH2/SiH and light-induced degradation of p-i-n hydrogenated amorphous silicon solar cells 査読

    Kimitaka Keya, Takashi Kojima, Yoshihiro Torigoe, Susumu Toko, Daisuke Yamashita, Hyunwoong Seo, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 7 )   2016年7月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/JJAP.55.07LE03

  • Correlation between SiH

    Keya Kimitaka, Kojima Takashi, Torigoe Yoshihiro, Toko Susumu, Yamashita Daisuke, Seo Hyunwoong, Itagaki Naho, Koga Kazunori, Shiratani Masaharu

    Jpn. J. Appl. Phys.   55 ( 7 )   07LE03   2016年6月

     詳細を見る

    記述言語:英語  

    Correlation between SiH
    We have measured the hydrogen content ratio I<inf>SiH2</inf>/I<inf>SiH</inf>associated with Si–H<inf>2</inf>and Si–H bonds in p–i–n (PIN) a-Si:H solar cells by Raman spectroscopy. With decreasing I<inf>SiH2</inf>/I<inf>SiH</inf>, the efficiency, short-circuit current density, open-circuit voltage, and fill factor of PIN a-Si:H solar cells after light soaking tend to increase. Namely, I<inf>SiH2</inf>/I<inf>SiH</inf>correlates well with light-induced degradation of the cells. While a single I-layer has a low I<inf>SiH2</inf>/I<inf>SiH</inf>of 0.03–0.09, a PIN cell has I<inf>SiH2</inf>/I<inf>SiH</inf>= 0.18 because many Si–H<inf>2</inf>bonds exist in the P-layer and at the P/I interface of the PIN solar cells. To realize PIN solar cells with higher stability, we must suppress Si–H<inf>2</inf>bond formation in the P-layer and at the P/I interface.

    DOI: 10.7567/JJAP.55.07LE03

  • Improvement of Charge Transportation in Si Quantum Dot-Sensitized Solar Cells Using Vanadium Doped TiO2

    Hyunwoong Seo, Daiki Ichida, Shinji Hashimoto, Naho Itagaki, Kazunori Koga, Masaharu Shiratani, Sang-Hun Nam, Jin-Hyo Boo

    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY   16 ( 5 )   4875 - 4879   2016年5月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1166/jnn.2016.12210

  • Effects of irradiation distance on supply of reactive oxygen species to the bottom of a Petri dish filled with liquid by an atmospheric O-2/He plasma jet

    Toshiyuki Kawasaki, Shota Kusumegi, Akihiro Kudo, Tomohiro Sakanoshita, Takuya Tsurumaru, Akihiro Sato, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani

    JOURNAL OF APPLIED PHYSICS   119 ( 17 )   2016年5月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1063/1.4948430

  • Polymer counter electrode of poly(3,4-ethylenedioxythiophene):Poly(4-styrenesulfonate) containing TiO2 nano-particles for dye-sensitized solar cells

    Hyunwoong Seo, Min-Kyu Son, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    JOURNAL OF POWER SOURCES   307   25 - 30   2016年3月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.jpowsour.2015.12.112

  • Quantum Characterization of Si Nano-Particles Fabricated by Multi-Hollow Discharge Plasma Chemical Vapor Deposition

    Hyunwoong Seo, Giichiro Uchida, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    SCIENCE OF ADVANCED MATERIALS   8 ( 3 )   636 - 639   2016年3月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1166/sam.2016.2520

  • Effects of gas flow rate on deposition rate and number of Si clusters incorporated into a-Si:H films

    Susumu Toko, Yoshihiro Torigoe, Kimitaka Keya, Hyunwoong Seo, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 1 )   2016年1月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/JJAP.55.01AA19

  • Simple method of improving harvest by nonthermal air plasma irradiation of seeds of Arabidopsis thaliana (L.)

    Kazunori Koga, Sarinont Thapanut, Takaaki Amano, Hyunwoong Seo, Naho Itagaki, Nobuya Hayashi, Masaharu Shiratani

    APPLIED PHYSICS EXPRESS   9 ( 1 )   2016年1月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/APEX.9.016201

  • Effects of deposition rate and ion bombardment on properties of a-C:H films deposited by H-assisted plasma CVD method

    Xiao Dong, Kazunori Koga, Daisuke Yamashita, Hyunwoong Seo, Naho Itagaki, Masaharu Shiratani, Yuichi Setsuhara, Makoto Sekine, Masaru Hori

    JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 1 )   2016年1月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/JJAP.55.01AA11

  • Influence of ionic liquid and ionic salt on protein against the reactive species generated using dielectric barrier discharge plasma

    Pankaj Attri, Thapanut Sarinont, Minsup Kim, Takaaki Amano, Kazunori Koga, Art E. Cho, Eun Ha Choi, Masaharu Shiratani

    SCIENTIFIC REPORTS   5   2015年12月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1038/srep17781

  • Gas Flow Rate Dependence of the Discharge Characteristics of a Plasma Jet Impinging Onto the Liquid Surface

    Giichiro Uchida, Atsushi Nakajima, Kosuke Takenaka, Kazunori Koga, Masaharu Shiratani, Yuichi Setsuhara

    IEEE TRANSACTIONS ON PLASMA SCIENCE   43 ( 12 )   4081 - 4087   2015年12月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1109/TPS.2015.2488619

  • Synthesis of Indium-Containing Nanoparticles in Aqueous Suspension Using Plasmas in Water for Evaluating Their Kinetics in Living Body

    Takaaki Amano, Thapanut Sarinont, Kazunori Koga, Miyuki Hirata, Akiyo Tanaka, Masaharu Shiratani

    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY   15 ( 11 )   9298 - 9302   2015年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1166/jnn.2015.11427

  • Structural alternation of tandem dye-sensitized solar cells based on mesh-type of counter electrode

    Hyunwoong Seo, Shinji Hashimoto, Daiki Ichida, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    ELECTROCHIMICA ACTA   179   206 - 210   2015年10月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.electacta.2015.04.105

  • Synthesis of indium-containing nanoparticles using plasmas in water to study their effects on living body 査読

    T. Amano, K. Koga, T. Sarinont, H. Seo, N. Itagaki, M. Shiratani, S. Kitazaki, M. Hirata, Y. Nakatsu, A. Tanaka

    Proc. 68th GEC/9th ICRP/33rd SPP609   LW1.158   2015年9月

     詳細を見る

    記述言語:その他  

    Synthesis of indium-containing nanoparticles using plasmas in water to study their effects on living body
    Nanoparticles can be employed for biomedical applications such as biomarkers, drug delivery systems, and cancer therapies. They are, however, pointed out their adverse effects on human body. Here, we synthesed indium-containing nanoparticles using discharge plasmas with indium electrodes immersed in DI water and administrated nanoparticles to rats to analyze their kinetics in living body. The discharge power was 5.1 W. The electron density is 5x1017/cm3 deduced from Stark broadening of hydrogen lines. TEM observation shows the mean size of primary nanoparticles is 7 nm. The nanoparticles are indium crystalline and indium hydroxide crystalline. The synthesized nanoparticles and purchased nanoparticles (In2O3, <100nm) were administrated to rats using subcutaneous injection. Indium of 166.7 g/day (synthesized) and of 27.8 g/day (purchased) are detected from the urine at 12 weeks after the administration. Synthesized nanoparticles dispersed in water are useful for analyzing kinetics of nanoparticles in living body. Work partly supported by KAKENHI.

  • Attraction during binary collision of fine particles in Ar plasma 査読

    M. Soejima, T. Ito, D. Yamashita, N. Itagaki, H. Seo, K. Koga, M. Shiratani

    Proc. 68th GEC/9th ICRP/33rd SPP609   GT1.018   2015年9月

     詳細を見る

    記述言語:その他  

    Attraction during binary collision of fine particles in Ar plasma
    Forces exerted on fine particles in plasmas play central roles in their transport, agglomeration, as well as Coulomb crystals and liquids. The forces are complicated because of charge fluctuation of fine particles, charge screening in plasma, anisotropy of plasma flow, and so on. Various formulas of such forces have been theoretically predicted but many of them have not been supported by experimental results yet. Here we carried out experiments on binary collision of fine particles using Ar rf-discharge plasmas. PMMA fine particles of 10 μm diameter were injected into the plasma and they were levitated around the plasma sheath boundary. The number of fine particles levitated was so small that we can observe non-collective pair interaction. We observed binary collisions of fine particles with a high speed and high resolution camera. We found that repulsion of two fine particles takes place in short distances, whereas attraction takes place in middle distances. These results indicate that inter-molecular like potential exists between them. The attraction corresponds to non-collective fine-particle attraction due to shadow effects.

  • Cluster Incorporation into A-Si:H Films Deposited Using H 2 +SiH 4 Discharge Plasmas 査読

    S. Toko, Y. Torigoe, K. Keya, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    Proc. 68th GEC/9th ICRP/33rd SPP609   GT1.152   2015年9月

     詳細を見る

    記述言語:その他  

    Cluster Incorporation into A-Si:H Films Deposited Using H 2 +SiH 4 Discharge Plasmas
    Light-induced degradation is the most important issue for hydrogenated amorphous silicon (a-Si:H) solar cells. Our previous results have suggested that incorporation of clusters into films is responsible for the light-induced degradation. Therefore, it is important to control the incorporation of clusters. Recently, we have developed multi-hollow discharge plasma CVD method, by which clusters are driven toward the downstream region and high quality a-Si:H films can be deposited in the upstream region. Here, we report effects of H2 dilution on cluster incorporation. Cluster size was measured by TEM, and the incorporation amount of clusters was measured with quartz crystal microbalances. H2 dilution leads to smaller clusters and the cluster incorporation in the upstream region increases with H2 dilution because the diffusion velocity of such small clusters much surpasses gas flow velocity.

  • Cross correlation analysis of plasma perturbation in amplitude modulated reactive dusty plasmas 査読

    T. Ito, M. Soejima, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani, T. Kobayashi, S. Inagaki

    Proc. 68th GEC/9th ICRP/33rd SPP609   GT1.049   2015年9月

     詳細を見る

    記述言語:その他  

    Cross correlation analysis of plasma perturbation in amplitude modulated reactive dusty plasmas
    Interactions between plasmas and nano-interface are one of the most important issues in plasma processing. We have studied effects of plasma perturbation on growth of nanoparticles in amplitude modulated reactive dusty plasmas and have clarified that amplitude modulation (AM) leads to suppression of growth of nanoparticles [1]. Here we report results of cross correlation analysis of time evolution of laser light scattering intensity from nanoparticles in reactive plasmas. Experiments were carried out using a capacitively-coupled rf discharge reactor with a two-dimensional laser light scattering (LLS) system. We employed Ar +DM-DMOS discharge plasmas to generate nanoparticles. The peaks at higher harmonics and subharmonics in spectra of laser light scattering intensity were detected, suggesting nonlinear coupling between plasma and nanoparticle amount. We found high cross correlation t between waves at AM frequency and its higher harmonics. Namely, perturbation at fAM closely correlates with those at higher harmonics.

  • Deposition rate and etching rate due to neutral radicals and dust particles measured using QCMs together with a dust eliminating filter 査読

    R. Katayama, K. Koga, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, M. Tokitani, S. Masuzaki, K. Nishimura, A. Sagara, LHD Experimental Group

    Proc. 68th GEC/9th ICRP/33rd SPP609   LW1.101   2015年9月

     詳細を見る

    記述言語:その他  

    Deposition rate and etching rate due to neutral radicals and dust particles measured using QCMs together with a dust eliminating filter
    We have developed an in-situ method for measuring deposition rate of radicals and dust particles using quartz crystal microbalances (QCMs) together with a dust eliminating filter. The QCMs have three channels of quartz crystals. Channel 1 was used to measure total deposition rate due to radicals and dust particles. Channel 2 was covered with a dust eliminating filter. Channel 3 was covered with a stainless-steel plate. Moreover, all QCMs are covered with a grounded stainless steel mesh for suppressing influx of charged particles. The measurements were conducted in the Large Helical Device in the National Institute for Fusion Science, Japan. Although the deposition measurements during the discharges were difficult, we obtained deposition rate and etching rate by comparing the data before and after each discharge. The frequency difference for channel 1 changes from 0.1 Hz (etching) to -0.5 Hz (deposition), while those for channels 2 and 3 are within a range of +/-0.1 Hz and +/-0.05 Hz, respectively. The QCM method gives information on deposition rate and etching rate due to neutral radicals and dust particles.

  • Effects of electrode structure on characteristics of multi-hollow discharges 査読

    Y. Torigoe, K. Keya, S. Toko, H. Seo, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani

    Proc. 68th GEC/9th ICRP/33rd SPP609   LW1.129   2015年9月

     詳細を見る

    記述言語:その他  

    Effects of electrode structure on characteristics of multi-hollow discharges
    Silane plasmas are widely employed for hydrogenated amorphous silicon (a-Si:H) film deposition. Amorphous silicon nanoparticles below 10 nm in size (clusters) are formed in silane plasmas and some of them are incorporated into a-Si:H films, leading to the light induced degradation which is the most important issue for a-Si:H solar cells. To suppress cluster incorporation, a multi-hollow discharge plasma CVD method has been developed and succeeded in depositing highly stable a-Si:H films. For further improvement of the film qualities, we have employed a thicker grounded electrode to suppress plasma expansion toward the deposition region. From optical images of the discharge plasmas, the expansion was significantly suppressed using 10 mm thick grounded electrode. For the 10 mm thick electrode, optical emission intensity ratio of Si* (288 nm) and SiH* (414 nm) ISi*/ISiH*, which shows a ratio of cluster generation ratio and radical ones, was 20&#37; of that for 1mm thick electrode. These results suggest that the generation of clusters was also suppressed using the 10 mm thick grounded electrode.

  • Effects of N2 dilution on fabrication of Ge nanoparticles by rf sputtering 査読

    S. Hashimoto, S. Tanami, H. Seo, G. Uchida, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Proc. 68th GEC/9th ICRP/33rd SPP609   LW1.133   2015年9月

     詳細を見る

    記述言語:その他  

    Effects of N2 dilution on fabrication of Ge nanoparticles by rf sputtering
    Multiple exciton generation (MEG) in QDs is expected to enhance significantly the energy conversion efficiency of solar cells. Although there are several reports on MEG characteristics from various QD materials such as PbS, CdSe, CdS ZnS, and Ag2S, such materials have disadvantages of their toxicity and limited resources. Here we have developed quantum-dots (QDs) solar cells using Ge nanoparticles fabricated by rf sputtering method under high pressure. We fabricated Ge nanoparticles by rf sputtering at a pressure of 1.5 Torr. Since the mean free path of Ge atoms is an order of micrometer, and Ge nanoparticles are formed in gas phase. We fabricated Ge nanoparticles using Ar and N2 to terminate surface defects by N. Ge and Ar emission intensities decrease significantly with increasing N2 partial pressure. The electron density was measured with a plasma absorption probe. The electron density decreases with increasing N2 partial pressure.

  • Laser trapped single fine particle as a probe of plasma parameters” 査読

    LW1.104   2015年9月

     詳細を見る

    記述言語:その他  

    Here we report evaluation of electron density and temperature using optically trapped single fine particle. Experiments were carried out with a radio frequency low pressure plasma reactor, where we set two quartz windows as top and bottom flanges to irradiate an infrared laser light of 1064 nm wavelength from the bottom side. Ar plasmas were generated between a powered ring-electrode set at the bottom of the reactor and a grounded mesh placed at the center of the reactor at 100 Pa by applying 13.56 MHz voltage. The particles injected into the plasmas were monodisperse methyl methacrylate-polymer spheres of 10 μm in diameter. A negatively charged particle, which is suspended plasma sheath boundary, was trapped at the focal point of the irradiated laser light due to the transfer of momentum from the scattering of incident photons. At the beginning of the trapping, particle of 10 μm in size was trapped above 505 μm from the bottom window. After 230 min, the size and position were 9.56 μm and 520 μm, respectively. From the results, the electron density and temperature are deduced to be 1.7×109 cm-3 and 1.9 eV.

  • Raman spectroscopy of PIN hydrogenated amorphous silicon solar cells 査読

    K. Keya, Y. Torigoe, S. Toko, D. Yamashita, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    Proc. 68th GEC/9th ICRP/33rd SPP609   LW1.132   2015年9月

     詳細を見る

    記述言語:その他  

    Raman spectroscopy of PIN hydrogenated amorphous silicon solar cells
    Light-induced degradation of hydrogenated amorphous silicon (a-Si:H) is a key issue for enhancing competitiveness in solar cell market. A-Si:H films with a lower density of Si-H2 bonds shows higher stability. Here we identified Si-H2 bonds in PIN a-Si:H solar cells fabricated by plasma CVD using Raman spectroscopy. A-Si:H solar cell has a structure of B-doped μc-SiC:H (12.5 nm)/ non-doped a-Si:H (250nm)/ P-doped μc-Si:H (40 nm) on glass substrates (Asahi-VU). By irradiating HeNe laser light from N-layer, peaks correspond to Si-H2 bonds (2100 cm-1) and Si-H bonds (2000 cm-1) have been identified in Raman scattering spectra. The intensity ratio of Si-H2 and Si-H ISiH2/ISiH is found to correlate well to light induced degradation of the cells Therefore, Raman spectroscopy is a promising method for studying origin of light-induced degradation of PIN solar cells.

  • Simple Evaluation Method of Atmospheric Plasma Irradiation Dose using pH of Water 査読

    K. Koga, T. Sarinont, T. Amano, H. Seo, N. Itagaki, Y. Nakatsu, A. Tanaka, M. Shiratani

    Proc. 68th GEC/9th ICRP/33rd SPP609   LW1.143   2015年9月

     詳細を見る

    記述言語:その他  

    Simple Evaluation Method of Atmospheric Plasma Irradiation Dose using pH of Water
    Atmospheric discharge plasmas are promising for agricultural productivity improvements and novel medical therapies, because plasma provides high flux of short-lifetime reactive species at low temperature, leading to low damage to living body. For the plasma-bio applications, various kinds of plasma systems are employed, thus common evaluation methods are needed to compare plasma irradiation dose quantitatively among the systems. Here we offer simple evaluation method of plasma irradiation dose using pH of water. Experiments were carried out with a scalable DBD device. 300 μl of deionized water was prepared into the quartz 96 microwell plate at 3 mm below electrode. The pH value has been measured just after 10 minutes irradiation. The pH value was evaluated as a function of plasma irradiation dose. Atmospheric air plasma irradiation decreases pH of water with increasing the dose. We also measured concentrations of chemical species such as nitrites, nitrates and H2O2. The results indicate our method is promising to evaluate plasma irradiation dose quantitatively.

  • Substrate temperature dependence of Au-induced crystalline Ge film formation using sputtering deposition 査読

    S. Tanami, D. Ichida, D. Hashimoto, G. Uchida, H. Seo, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Proc. 68th GEC/9th ICRP/33rd SPP609   GT1.149   2015年9月

     詳細を見る

    記述言語:その他  

    Substrate temperature dependence of Au-induced crystalline Ge film formation using sputtering deposition
    We are developing Au-induced crystalline Ge film formation using sputtering deposition. For the method, very thin Au films were deposited on SiO2 substrates and then Ge atoms were irradiated to the Au films by sputtering. We found two kinds of Ge film growth: one is Ge film formation on Au films, and the other is Ge film formed between Au films and SiO2. The latter film formation, however, takes place in a narrow temperature range around 140°C. Here we report two kinds of substrate temperature dependence of Ge film formation: one is annealing temperature of Au films, and the other is the substrate temperature dependence during Ge sputtering. 30nm-thick Au films were deposited quartz glass as a catalyst at room temperature by sputtering. Then the Au films were annealed in a temperature range from room temperature to 190 °C in a vacuum. Au grain grows and crystal orientation shows better alignment as the annealing temperature rises. We found that the smaller grain size with random orientation is better for Ge film formed between Au films and SiO2.

  • Real-time mass measurement of dust particles deposited on vessel wall in a divertor simulator using quartz crystal microbalances

    Mizuki Tateishi, Kazunori Koga, Ryu Katayama, Daisuke Yamashita, Kunihiro Kamataki, Hyunwoong Seo, Naho Itagaki, Masaharu Shiratani, Naoko Ashikawa, Suguru Masuzaki, Kiyohiko Nishimura, Akio Sagara

    JOURNAL OF NUCLEAR MATERIALS   463   865 - 868   2015年8月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.jnucmat.2014.10.049

  • Fabrication of ZnInON/ZnO multi-quantum well solar cells

    Koichi Matsushima, Ryota Shimizu, Tomoaki Ide, Daisuke Yamashita, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

    THIN SOLID FILMS   587   106 - 111   2015年7月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.tsf.2015.01.012

  • Effects of gas flow on oxidation reaction in liquid induced by He/O-2 plasma-jet irradiation

    Atsushi Nakajima, Giichiro Uchida, Toshiyuki Kawasaki, Kazunori Koga, Thapanut Sarinont, Takaaki Amano, Kosuke Takenaka, Masaharu Shiratani, Yuichi Setsuhara

    JOURNAL OF APPLIED PHYSICS   118 ( 4 )   2015年7月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1063/1.4927217

  • Effects of cluster incorporation into hydrogenated amorphous silicon films in initial discharge phase on film stability

    Susumu Toko, Yoshihiro Torigoe, Weiting Chen, Daisuke Yamashita, Hyunwoong Seo, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    THIN SOLID FILMS   587   126 - 131   2015年7月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.tsf.2015.02.052

  • Effects of discharge voltage on the characteristics of a-C:H films prepared by H-assisted Plasma CVD method 査読

    X. Dong, K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, Y. Setsuhara, M. Sekine, M. Hori

    Trans. Mater. Res. Soc. Jpn.   40 ( 2 )   123-128 - 128   2015年7月

     詳細を見る

    記述言語:英語  

    Effects of discharge voltage on the characteristics of a-C:H films prepared by H-assisted Plasma CVD method
    Hydrogen bonding configurations and hydrogen content of a-C:H films deposited by H-assisted plasma CVD were investigated by Fourier transform infrared spectroscopy. Plasma parameters related to deposition rate were derived using optical emission spectroscopy. The a-C:H films contain a large number of sp3 configurations (93&#37;) and a few sp2 configurations (7&#37;). Most of the hydrogen is bonded in methyl groups which shows the structure of deposited a-C:H films is polymer-like carbon. The mass density has nearly linear decreases with increasing the hydrogen atom density, indicating that control of hydrogen content is crucial to obtain a-C:H films of high mass density. A slight increase in radical generation rate and significant increases in etching rate by hydrogen atoms lead to decrease the deposition rate when the discharge voltage increases from 170 V to 180 V.

    DOI: 10.14723/tmrsj.40.123

  • Deposition of Carbon Films on PMMA Using H-assisted Plasma CVD 査読

    X. Dong, R. Torigoe, K. Koga, G. Uchida, M. Shiratani, N. Itagaki, Y. Setsuhara, K. Takenaka, M. Sekine, M. Hori

    Jpn. Phys. Soc. Conf. Proc (APPC12)   1   015072   2015年3月

     詳細を見る

    記述言語:英語  

    Deposition of Carbon Films on PMMA Using H-assisted Plasma CVD

    DOI: 10.7566/JPSCP.1.015072

  • Photovoltaic application of Si nanoparticles fabricated by multihollow plasma discharge CVD: Dye and Si co-sensitized solar cells

    Hyunwoong Seo, Daiki Ichida, Shinji Hashimoto, Giichiro Uchida, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 1 )   2015年1月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/JJAP.54.01AD02

  • Dust Hour Glass in a Capacitive RF Discharge

    Shinya Iwashita, Edmund Schuengel, Julian Schulze, Peter Hartmann, Zoltan Donko, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani, Uwe Czarnetzki

    IEEE TRANSACTIONS ON PLASMA SCIENCE   42 ( 10 )   2672 - 2673   2014年10月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1109/TPS.2014.2343975

  • Visualization of the Distribution of Oxidizing Substances in an Atmospheric Pressure Plasma Jet

    Toshiyuki Kawasaki, Kota Kawano, Hiroshi Mizoguchi, Yuto Yano, Keisuke Yamashita, Miho Sakai, Takako Shimizu, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani

    IEEE TRANSACTIONS ON PLASMA SCIENCE   42 ( 10 )   2482 - 2483   2014年10月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1109/TPS.2014.2325038

  • Synthesis and characterization of ZnInON semiconductor: a ZnO-based compound with tunable band gap

    N. Itagaki, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani

    MATERIALS RESEARCH EXPRESS   1 ( 3 )   2014年9月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1088/2053-1591/1/3/036405

  • Off-axis sputter deposition of ZnO films on c-sapphire substrates by utilizing nitrogen-mediated crystallization method 査読

    Naho Itagaki, Kazunari Kuwahara, Koichi Matsushima, Daisuke Yamashita, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani

    OPTICAL ENGINEERING   53 ( 8 )   87109   2014年8月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1117/1.OE.53.8.087109

  • Plasma induced long-term growth enhancement of Raphanus sativus L. using combinatorial atmospheric air dielectric barrier discharge plasmas

    Satoshi Kitazaki, Thapanut Sarinont, Kazunori Koga, Nobuya Hayashi, Masaharu Shiratani

    CURRENT APPLIED PHYSICS   14   S149 - S153   2014年7月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.cap.2013.11.056

  • Performance dependence of Si quantum dot-sensitized solar cells on counter electrode

    Hyunwoong Seo, Daiki Ichida, Giichiro Uchida, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    JAPANESE JOURNAL OF APPLIED PHYSICS   53 ( 5 )   2014年5月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/JJAP.53.05FZ01

  • Electrochemical impedance analysis on the additional layers for the enhancement on the performance of dye-sensitized solar cell

    Hyunwoong Seo, Min-Kyu Son, Songyi Park, Myeongsoo Jeong, Hee-Je Kim, Giichiro Uchida, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    THIN SOLID FILMS   554   122 - 126   2014年3月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.tsf.2013.08.103

  • Analysis on the Photovoltaic Property of Si Quantum Dot-Sensitized Solar Cells

    Hyunwoong Seo, Daiki Ichida, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    INTERNATIONAL JOURNAL OF PRECISION ENGINEERING AND MANUFACTURING   15 ( 2 )   339 - 343   2014年2月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1007/s12541-014-0343-8

  • Performance enhancement of dye and Si quantum dot hybrid nanostructured solar cell with TiO2 barrier 査読

    H. Seo, D. Ichida, S. Hashimoto, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    Trans. Mater. Res. Soc. Jpn.   39 ( 3 )   321 - 324   2014年1月

     詳細を見る

    記述言語:日本語  

    Performance enhancement of dye and Si quantum dot hybrid nanostructured solar cell with TiO2 barrier
    Dye and quantum dot (QD) are representative sensitizers of the photochemical solar cells. Dye has the highest efficiency in the whole sensitizers. QDs have relatively low performance but their multiple exciton generation enhanced theoretical efficiency from 33 to 44&#37; and expected to achieve high efficiency. This work tried to enhance the photovoltaic performance with the co-sensitization of N719 dye and Si QD. The performance of dye and QD co-sensitized solar cell was not much enhanced because of electron loss of charge recombination. Therefore, TiO2 barrier layer was introduced on TiO2 and Si QD. It blocked the charge recombination with redox electrolyte. It also helped better electron injection from excited dye to TiO2 with strengthened dye adsorption. Consequently, the performance of co-sensitized solar cell was enhanced with reduced charge recombination and increased dye adsorption.

    DOI: 10.14723/tmrsj.39.321

  • Epitaxial growth of ZnO films on sapphire substrates by magnetron sputtering: Effects of buffer layers prepared via nitrogen mediated crystallization 査読

    T. Ide, K. Matsushima, R. Shimizu, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    Proc. 8th Int. Conf. Reactive Plasmas   4P-PM-S08-P10   2014年1月

     詳細を見る

    記述言語:その他  

    Epitaxial growth of ZnO films on sapphire substrates by magnetron sputtering: Effects of buffer layers prepared via nitrogen mediated crystallization

  • Fabrication of In-rich ZnInON filmswith narrow band gap by RF magnetron sputtering 査読

    K. Matsushima, R. Shimizu, T. Ide, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    Proc. 8th Int. Conf. Reactive Plasmas   5P-PM-S08-P02   2014年1月

     詳細を見る

    記述言語:その他  

    Fabrication of In-rich ZnInON filmswith narrow band gap by RF magnetron sputtering

  • Fabrication of SiC nanoparticles as high capacity electrodes for Li-ion batteries 査読

    G. Uchida, K. Kamataki, D. Ichida, Y. Morita, H. Seo, N. Itagaki, K. Koga, T. Ishihara, M. Shiratani

    Proc. 8th Int. Conf. Reactive Plasmas   4C-PM-O1   2014年1月

     詳細を見る

    記述言語:その他  

    Fabrication of SiC nanoparticles as high capacity electrodes for Li-ion batteries

  • Fabrication of size-controlled Ge nanoparticle films varying gas flow rate using high pressure rf magnetron sputtering method 査読

    D. Ichida, S. Hashimoto, G. Uchida, H. Seo, D. Yamashita, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Proc. 8th Int. Conf. Reactive Plasmas   6P-AM-S08-P33   2014年1月

     詳細を見る

    記述言語:その他  

    Fabrication of size-controlled Ge nanoparticle films varying gas flow rate using high pressure rf magnetron sputtering method

  • Fine response of deposition rate of Si films deposited by multi-hollow discharge plasma CVD with amplitude modulation 査読

    S. Toko, Y. Hashimoto, Y. Kanemitu, Y. Torigoe, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Proc. 8th Int. Conf. Reactive Plasmas   5P-AM-S05-P17   2014年1月

     詳細を見る

    記述言語:その他  

    Fine response of deposition rate of Si films deposited by multi-hollow discharge plasma CVD with amplitude modulation

  • Magnetron sputtering of low-resistive In2O3:Sn films with buffer layers fabricated via nitrogen mediated crystallization 査読

    K. Oshikawa, I. Suhariadi, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, N. Itagaki

    Proc. 8th Int. Conf. Reactive Plasmas   5P-PM-S08-P07   2014年1月

     詳細を見る

    記述言語:その他  

    Magnetron sputtering of low-resistive In2O3:Sn films with buffer layers fabricated via nitrogen mediated crystallization

  • Nanoparticle amount in reactive plasmas with amplitude modulation detected by twodimensional laser light scattering method 査読

    T. Ito, Y. Morita, S. Iwashita, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Proc. 8th Int. Conf. Reactive Plasmas   5P-AM-SPD-P01   2014年1月

     詳細を見る

    記述言語:その他  

    Nanoparticle amount in reactive plasmas with amplitude modulation detected by twodimensional laser light scattering method

  • Raman spectroscopy of a fine particle optically trapped in plasma”, Proc. 8th Int. Conf. Reactive Plasmas 査読

    5P-AM-S05-P23   2014年1月

     詳細を見る

    記述言語:その他  

  • Spatial profile of flux of dust particles in hydrogen helicon plasmas”, Proc. 8th Int. Conf. Reactive Plasmas 査読

    5P-AM-S05-P21   2014年1月

     詳細を見る

    記述言語:その他  

  • Sputter Deposition of Ga-doped Zinc Oxide (GZO) Films with Buffer Layers Fabricated via Nitrogen Mediated Crystallization 査読

    T. Nakanishi, K. Oshikawa, I. Suhariadi, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    Proc. 8th Int. Conf. Reactive Plasmas   5P-AM-S05-P19   2014年1月

     詳細を見る

    記述言語:その他  

    Sputter Deposition of Ga-doped Zinc Oxide (GZO) Films with Buffer Layers Fabricated via Nitrogen Mediated Crystallization

  • Sputtering fabrication of a novel widegap semiconductor ZnGaON for optoelectronic devices with wide bandgap for optical device 査読

    R. Shimizu, K. Matsushima, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    Proc. 8th Int. Conf. Reactive Plasmas   5P-PM-S08-P03   2014年1月

     詳細を見る

    記述言語:その他  

    Sputtering fabrication of a novel widegap semiconductor ZnGaON for optoelectronic devices with wide bandgap for optical device

  • Study on nitrogen desorption behavior of sputtered ZnO for transparent conducting oxide 査読

    I. Suhariadi, K. Oshikawa, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki

    Proc. 8th Int. Conf. Reactive Plasmas   5P-PM-S08-P05   2014年1月

     詳細を見る

    記述言語:その他  

    Study on nitrogen desorption behavior of sputtered ZnO for transparent conducting oxide

  • Subacute toxicity of gallium arsenide, indium arsenide and arsenic trioxide following intermittent intrantracheal instillations to the lung of rats 査読

    A. Tanaka, M. Hirata, K. Koga, N. Itagaki, M. Shiratani, N. Hayashi, G. Uchida

    Proc. 8th Int. Conf. Reactive Plasmas   5P-AM-S2-P35   2014年1月

     詳細を見る

    記述言語:その他  

    Subacute toxicity of gallium arsenide, indium arsenide and arsenic trioxide following intermittent intrantracheal instillations to the lung of rats

  • Substrate temperature dependence of hydrogen content of a-Si:H film deposited with a cluster-eliminating filter 査読

    Y. Hashimoto, S. Toko, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Proc. 8th Int. Conf. Reactive Plasmas   6P-AM-S08-P37   2014年1月

     詳細を見る

    記述言語:その他  

    Substrate temperature dependence of hydrogen content of a-Si:H film deposited with a cluster-eliminating filter

  • Combinatorial Plasma CVD of Si Nanoparticle Composite Films for Band Gap Control 査読

    G. Uchida, Y. Kanemitsu, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    JPS Conf. Proc   1   15080   2014年1月

     詳細を見る

    記述言語:その他  

    Combinatorial Plasma CVD of Si Nanoparticle Composite Films for Band Gap Control
    Crystalline Si nanoparticles were successfully fabricated by a multi-hollow discharge plasma CVD method. Optical band gap of Si-nanoparticle composite films was controlled in a range of 1.6?1.9?eV by the volume fraction of Si nanoparticles in the films. SiN nanoparticle composite films were also successfully produced using a double multi-hollow discharge plasma CVD method in SiH4/H2 and N2 gas mixture. High optical band gap of 2.1?2.2?eV was achieved by adding N atoms to the Si naoparticles.

    DOI: 10.7566/JPSCP.1.015080

  • Correlation between nanoparticle growth and plasma parameters in low pressure reactive VHF discharge plasmas 査読

    M. Shiratani, Y. Morita, K. Kamataki, H. Seo, G. Uchida, N. Itagaki, K. Koga

    JPS Conf. Proc   1   15083   2014年1月

     詳細を見る

    記述言語:その他  

    Correlation between nanoparticle growth and plasma parameters in low pressure reactive VHF discharge plasmas
    We report experimental results on correlation between plasma parameters and growth of nanoparticles in capacitively-coupled VHF discharges with amplitude modulation (AM) obtained using two dimensional laser light scattering (LLS) method. Power spectra of floating potential, Ar 810.27?nm emission intensity, and LLS intensity have peaks at the modulation frequency of 100?Hz and its second harmonics, indicating linear correlation between plasma parameters and growth of nanoparticles, that is, their size and/or density. The power spectrum of LLS intensity has another peak at 60?Hz, which coincides with our theoretical prediction of plasma fluctuation induceed nonlinear response of nanoparticle growth.

    DOI: 10.7566/JPSCP.1.015083

  • Effects of Grid DC Bias on Incorporation of Si Clusters into Amorphous Silicon Thin Films in Multi-Hollow Discharge Plasma CVD 査読

    S. Toko, Y. Kim, Y. Hashimoto, Y. Kanemitu, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    JPS Conf. Proc   1   15069   2014年1月

     詳細を見る

    記述言語:その他  

    Effects of Grid DC Bias on Incorporation of Si Clusters into Amorphous Silicon Thin Films in Multi-Hollow Discharge Plasma CVD
    Si clusters formed in silane discharge plasmas are mainly responsible for light induced degradation of hydrogenated amorphous Si (a-Si:H) thin films deposited by the plasmas. Here we have investigated effects of grid DC bias on incorporation amount of Si clusters into a-Si:H films in multi-hollow discharge plasma CVD reactor using quartz crystal microbalances, by which volume fraction of Si clusters in deposited films is quantitatively measured. When the grid potential is lower than plasma potential, the negatively charged clusters are repelled away from the grid by electrostatic force, resulting in lower volume fraction.

    DOI: 10.7566/JPSCP.1.015069

  • Effects of H2 Gas Addition on Structure of Ge Nanoparticle Films Deposited by High-pressure RF Magnetron Sputtering Method 査読

    G. Uchida, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    JPS Conf. Proc   1   15082   2014年1月

     詳細を見る

    記述言語:その他  

    Effects of H2 Gas Addition on Structure of Ge Nanoparticle Films Deposited by High-pressure RF Magnetron Sputtering Method
    We have deposited crystalline Ge nanoparticle films using a radio frequency magnetron sputtering method in argon and hydrogen gas mixture under a high pressure condition. Raman spectra and X-ray diffraction pattern of Ge nanoparticle films show a transition from amorphous to crystalline by adding H2 gas.

    DOI: 10.7566/JPSCP.1.015082

  • Spatial Profile of Flux of Dust Particles Generated due to Interaction between Hydrogen Plasmas and Graphite Target 査読

    M. Tateishi, K. Koga, D. Yamashita, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, the LHD Experimental Group

    JPS Conf. Proc   1   15020   2014年1月

     詳細を見る

    記述言語:その他  

    Spatial Profile of Flux of Dust Particles Generated due to Interaction between Hydrogen Plasmas and Graphite Target
    We have measured spatial profile of flux of dust particles generated due to interaction between H2 plasmas and graphite target in a divertor simulator to study transport mechanism of dust particles. Dust particles were collected on c-Si substrates and observed with a scanning electron microscope. We have found nanostructure of 10?nm in size on the substrate surface. Dust fluxes of both spherical dust particles and flakes are maximum at a position between 80 and 140?mm from the center of the plasma column. The spatial profile of dust flux is determined by the balance between deposition of nanoparticles and their etching by H atoms.

    DOI: 10.7566/JPSCP.1.015020

  • Study on the Crystal Growth Mechanism of ZnO Films Fabricated Via Nitrogen Mediated Crystallization 査読

    I. Suhariadi, K. Oshikawa, D. Yamashita, K. Kamataki, G. Uchida, K. Koga, M. Shiratani, N. Itagaki

    JPS Conf. Proc   1   15064   2014年1月

     詳細を見る

    記述言語:その他  

    Study on the Crystal Growth Mechanism of ZnO Films Fabricated Via Nitrogen Mediated Crystallization
    Effects of nitrogen addition to the sputtering atmosphere on crystal growth of ZnO films have been studied. The AFM characterization shows that the nitrogen suppresses the nucleation in the early stage of the crystal growth leading to a non-continue film structure with sparsely distributed grains. As the deposition time increases, the physical properties of the ZnO films are modified by enhancement of adatoms migration at the growing surface, thus homogenous and dense films with larger grain size are obtained. Utilizing these ZnO films as buffer layers with film thickness greater than 4?nm, the electrical resistivity of ZnO:Al films have been significantly decreased from 7.8 × 10?3?Ω?cm to 6.7 × 10?4?Ω?cm.

    DOI: 10.7566/JPSCP.1.015064

  • Nanostructure control of Si and Ge quantum dots based solar cells using plasma processes

    Masaharu Shiratani, Giichiro Uchida, Hyun Woong Seo, Daiki Ichida, Kazunori Koga, Naho Itagaki, Kunihiro Kamataki

    Materials Science Forum   783-786   2022 - 2027   2014年1月

     詳細を見る

    記述言語:その他  

    Nanostructure control of Si and Ge quantum dots based solar cells using plasma processes
    We report characteristics of quantum dot (QD) sensitized solar cells using Si nanoparticles and Ge nanoparticles. Si nanoparticles were synthesized by multi-hollow discharge plasma chemical vapor deposition, whereas Ge nanoparticles were done by a radio frequency magnetron sputtering using Ar+H2 under high pressure conditions. The electrical power generation from Si QDs and Ge QDs was confirmed. Si QD sensitized solar cells show an efficiency of 0.024&#37;, fill factor of 0.32, short-circuit current of 0.75 mA/cm2 and open-circuit voltage of 0.10 V, while Ge QD sensitized solar cells show an efficiency of 0.036&#37;, fill factor of 0.38, short-circuit current of 0.64 mA/cm2 and open-circuit voltage of 0.15 V. © (2014) Trans Tech Publications, Switzerland.

    DOI: 10.4028/www.scientific.net/MSF.783-786.2022

  • スパッタリング成膜法による高品質酸化亜鉛薄膜の形成 招待 査読

    板垣奈穂, 古閑一憲, 白谷正治

    応用物理   83   385 - 389   2014年1月

     詳細を見る

    記述言語:その他  

    スパッタリング成膜法を用いた酸化亜鉛(ZnO)薄膜の結晶成長において,初期核形成を制御する新しい方法「不純物添加結晶化(Impurity Mediated Crystallization: IMC)法」を開発した.本手法により,高格子不整合基板上への原子レベルで平坦なZnO単結晶膜の作製や,ガラス基板上への極薄低抵抗ZnO導電膜の形成が可能となった.本稿では,IMC法について紹介するとともに,これら成果の概要を述べる.

  • Effects of amplitude modulation on deposition of hydrogenated amorphous silicon films using multi-Hollow discharge plasma CVD method 査読

    Y. Torigoe, Y. Hashimoto, S. Toko, Y. Kim, D. Yamashita, H. Seo, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani

    Proc. 8th Int. Conf. Reactive Plasmas   6P-AM-S08-P36   2014年1月

     詳細を見る

    記述言語:その他  

    Effects of amplitude modulation on deposition of hydrogenated amorphous silicon films using multi-Hollow discharge plasma CVD method

  • Theory for correlation between plasma fluctuation and fluctuation of nanoparticle growth in reactive plasmas

    Masaharu Shiratani, Kazunori Koga, Kunihiro Kamataki, Shinya Iwashita, Giichiro Uchida, Hyunwoong Seo, Naho Itagaki

    JAPANESE JOURNAL OF APPLIED PHYSICS   53 ( 1 )   2014年1月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/JJAP.53.010201

  • A model for correlation between plasma fluctuation and fluctuation of nanoparticle growth in reactive plasmas 査読

    M. Shiratani, K. Koga, K. Kamataki, S. Iwashita, Y. Morita, H. Seo, N. Itagaki, G. Uchida

    Proc. 8th Int. Conf. Reactive Plasmas   4B-PM-O1   2014年1月

     詳細を見る

    記述言語:その他  

    A model for correlation between plasma fluctuation and fluctuation of nanoparticle growth in reactive plasmas

  • Analysis of fluctuation of Ar metastable density and nanoparticle amount in capacitively coupled discharges with amplitude modulation 査読

    Y. Morita, T. Ito, S. Iwashita, D. Yamashita, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Proc. 8th Int. Conf. Reactive Plasmas   5P-AM-S02-P1   2014年1月

     詳細を見る

    記述言語:その他  

    Analysis of fluctuation of Ar metastable density and nanoparticle amount in capacitively coupled discharges with amplitude modulation

  • Combinatorial evaluation of optical properties of crystalline Si nanoparticle embedded Si films deposited by a multi-hollow discharge plasma CVD method 査読

    Y. Kanemitsu, G. Uchida, D. Ichida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Proc. 8th Int. Conf. Reactive Plasmas   6P-AM-S08-P35   2014年1月

     詳細を見る

    記述言語:その他  

    Combinatorial evaluation of optical properties of crystalline Si nanoparticle embedded Si films deposited by a multi-hollow discharge plasma CVD method

  • Coupling between radicals and nanoparticles in initial growth phase in reactive plasmas with amplitude modulation 査読

    K. Koga, Y. Morita, K. Kamataki, D. Yamashita, N. Itagaki, G. Uchida, M. Shiratani

    Proc. 8th Int. Conf. Reactive Plasmas   3B-WS-14   2014年1月

     詳細を見る

    記述言語:その他  

    Coupling between radicals and nanoparticles in initial growth phase in reactive plasmas with amplitude modulation

  • Deposition of Crystalline Ge Nanoparticle Films Varying H2 Dilution Ratio Using High Pressure rf Magnetron Sputtering 査読

    S. Hashimoto, D. Ichida, G. Uchida, H. Seo, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Proc. 8th Int. Conf. Reactive Plasmas   6P-AM-S08-P32   2014年1月

     詳細を見る

    記述言語:その他  

    Deposition of Crystalline Ge Nanoparticle Films Varying H2 Dilution Ratio Using High Pressure rf Magnetron Sputtering

  • The improvement on the performance of quantum dot-sensitized solar cells with functionalized Si

    Hyunwoong Seo, Yuting Wang, Muneharu Sato, Giichiro Uchida, Kazunori Koga, Naho Itagaki, Kunihiro Kamataki, Masaharu Shiratani

    THIN SOLID FILMS   546   284 - 288   2013年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.tsf.2013.04.073

  • Characteristics of Crystalline Silicon/Si Quantum Dot/Poly(3,4-ethylenedioxythiophene) Hybrid Solar Cells

    Giichiro Uchida, Yuting Wang, Daiki Ichida, Hyunwoong Seo, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 11 )   2013年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/JJAP.52.11NA05

  • Correlation between Volume Fraction of Silicon Clusters in Amorphous Silicon Films and Optical Emission Properties of Si* and SiH*

    Yeonwon Kim, Kosuke Hatozaki, Yuji Hashimoto, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani

    JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 11 )   2013年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/JJAP.52.11NA07

  • Effects of Nitrogen on Crystal Growth of Sputter-Deposited ZnO Films for Transparent Conducting Oxide

    Iping Suhariadi, Kouichiro Oshikawa, Kazunari Kuwahara, Kouichi Matsushima, Daisuke Yamashita, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

    JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 11 )   2013年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/JJAP.52.11NB03

  • Epitaxial Growth of ZnInON Films with Tunable Band Gap from 1.7 to 3.3 eV on ZnO Templates

    Koichi Matsushima, Tadafumi Hirose, Kazunari Kuwahara, Daisuke Yamashita, Giichiro Uchida, Hyunwoong Seo, Kunihiro Kamataki, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

    JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 11 )   2013年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/JJAP.52.11NM06

  • Flux Control of Carbon Nanoparticles Generated due to Interactions between Hydrogen Plasmas and Graphite Using DC-Biased Substrates

    Kazunori Koga, Mizuki Tateishi, Katsushi Nishiyama, Giichiro Uchida, Kunihiro Kamataki, Daisuke Yamashita, Hyunwoong Seo, Naho Itagaki, Masaharu Shiratani, Naoko Ashikawa, Suguru Masuzaki, Kiyohiko Nishimura, Akio Sagara

    JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 11 )   2013年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/JJAP.52.11NA08

  • Improvement on the electron transfer of dye-sensitized solar cell using vanadium doped TiO2

    Hyunwoong Seo, Yuting Wang, Daiki Ichida, Giichiro Uchida, Naho Itagaki, Kazunori Koga, Masaharu Shiratani, Sang-Hun Nam, Jin-Hyo Boo

    Japanese Journal of Applied Physics   52 ( 11 )   2013年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(その他学術会議資料等)  

    DOI: 10.7567/JJAP.52.11NM02

  • Study on the Fabrication of Paint-Type Si Quantum Dot-Sensitized Solar Cells

    Hyunwoong Seo, Min-Kyu Son, Hee-Je Kim, Yuting Wang, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 10 )   2013年10月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/JJAP.52.10MB07

  • Extension of operation regimes and investigation of three-dimensional currentless plasmas in the Large Helical Device

    O. Kaneko, H. Yamada, S. Inagaki, M. Jakubowski, S. Kajita, S. Kitajima, Kobayashi, K. Koga, T. Morisaki, S. Morita, T. Mutoh, S. Sakakibara, Y. Suzuki, H. Takahashi, K. Tanaka, K. Toi, Y. Yoshimura, T. Akiyama, Y. Asahi, N. Ashikawa, H. Chikaraishi, A. Cooper, D. S. Darrow, E. Drapiko, P. Drewelow, X. Du, A. Ejiri, M. Emoto, T. Evans, N. Ezumi, K. Fujii, T. Fukuda, H. Funaba, M. Furukawa, D. A. Gates, M. Goto, T. Goto, W. Guttenfelder, S. Hamaguchi, M. Hasuo, T. Hino, Y. Hirooka, K. Ichiguchi, K. Ida, H. Idei, T. Ido, H. Igami, K. Ikeda, S. Imagawa, T. Imai, M. Isobe, M. Itagaki, T. Ito, K. Itoh, S. Itoh, A. Iwamoto, K. Kamiya, T. Kariya, H. Kasahara, N. Kasuya, D. Kato, T. Kato, K. Kawahata, F. Koike, S. Kubo, R. Kumazawa, D. Kuwahara, S. Lazerson, H. Lee, S. Masuzaki, S. Matsuoka, H. Matsuura, A. Matsuyama, C. Michael, D. Mikkelsen, O. Mitarai, T. Mito, J. Miyazawa, G. Motojima, K. Mukai, A. Murakami, I. Murakami, S. Murakami, T. Muroga, S. Muto, K. Nagaoka, K. Nagasaki, Y. Nagayama, N. Nakajima, H. Nakamura, Y. Nakamura, H. Nakanishi, H. Nakano, T. Nakano, K. Narihara, Y. Narushima, K. Nishimura, S. Nishimura, M. Nishiura, Y. M. Nunami, T. Obana, K. Ogawa, S. Ohdachi, N. Ohno, N. Ohyabu, T. Oishi, M. Okamoto, A. Okamoto, M. Osakabe, Y. Oya, T. Ozaki, N. Pablant, B. J. Peterson, A. Sagara, K. Saito, R. Sakamoto, H. Sakaue, M. Sasao, K. Sato, M. Sato, K. Sawada, R. Seki, T. Seki, V. Sergeev, S. Sharapov, I. Sharov, A. Shimizu, T. Shimozuma, M. Shiratani, M. Shoji, S. Sudo, H. Sugama, C. Suzuki, K. Takahata, Y. Takeiri, Y. Takemura, M. Takeuchi, H. Tamura, N. Tamura, H. Tanaka, T. Tanaka, M. Tingfeng, Y. Todo, M. Tokitani, K. Tokunaga, T. Tokuzawa, H. Tsuchiya, K. Tsumori, Y. Ueda, L. Vyacheslavov, K. Y. Watanabe, T. Watanabe, T. H. Watanabe, B. Wieland, I. Yamada, S. Yamada, S. Yamamoto, N. Yanagi, R. Yasuhara, M. Yokoyama, N. Yoshida, S. Yoshimura, T. Yoshinaga, M. Yoshinuma, A. Komori

    NUCLEAR FUSION   53 ( 10 )   2013年10月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1088/0029-5515/53/10/104015

  • Characteristics of photocurrent generation in the near-ultraviolet region in Si quantum-dot sensitized solar cells

    Giichiro Uchida, Muneharu Sato, Hyunwoong Seo, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    THIN SOLID FILMS   544   93 - 98   2013年10月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.tsf.2013.04.111

  • Crystallinity control of sputtered ZnO films by utilizing buffer layers fabricated via nitrogen mediated crystallization: Effects of nitrogen flow rate

    N. Itagaki, K. Oshikawa, K. Matsushima, I. Suhariadi, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani

    Proc. 13th International Conference on Plasma Surface Engineering   26   84 - 87   2013年9月

     詳細を見る

    記述言語:その他  

    Crystallinity control of sputtered ZnO films by utilizing buffer layers fabricated via nitrogen mediated crystallization: Effects of nitrogen flow rate
    High quality ZnO:Al (AZO) films have been obtained by utilizing buffer layers fabricated via nitrogen mediated crystallization (NMC), where sputtering method is employed for preparation of both buffer layers and AZO films. Introduction of small amount of N2 (N2/(Ar+N2) = 16&#37;) to the sputtering atmosphere of NMC-ZnO buffer layers drastically improves the crystallinity of buffer layers and thus AZO films. The most remarkable effect of the buffer layers is a significant reduction in the resistivity at high base pressure of background gases. The resistivity of conventional AZO films increases from 2.0 m??cm to 70.0 m??cm with increasing the base pressure from 3×10-5 Pa to 1×10-3 Pa, while the resistivity of AZO films with NMC buffer layers increases from 0.5 m??cm to 2.0 m??cm, where the thickness of AZO film is 88 nm. Furthermore, AZO films with a sheet resistance of 10 ?/? and an optical transmittance higher than 80&#37; in a wide wavelength range of 400?1100 nm have been obtained.

  • クラスタ抑制法を用いた高光安定アモルファスシリコンPIN太陽電池の作製

    古閑 一憲, 橋本 優史, 金 淵元, 都甲 将, 徐 鉉雄, 板垣 奈穗, 白谷 正治, 内田 儀一郎

    電気学会研究会資料. PST, プラズマ研究会   2013 ( 74 )   13 - 17   2013年9月

     詳細を見る

    記述言語:日本語  

  • Control of Deposition Profile and Properties of Plasma CVD Carbon Films

    K. Koga, T. Urakawa, G. Uchida, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani

    Proc. 13th International Conference on Plasma Surface Engineering   26   136 - 139   2013年9月

     詳細を見る

    記述言語:その他  

    Control of Deposition Profile and Properties of Plasma CVD Carbon Films
    We have succeeded to deposit anisotropic and top surface deposition profile on substrates with trenches using H-assisted plasma CVD of Ar + H2 + C7H8 at a low substrate temperature of 100 oC. For the anisotropic deposition profile, carbon is deposited without being deposited on sidewall of trenches. For the top surface deposition profile, carbon is deposited at only top surface. The optical emission measurements and evaluation of deposition rate have revealed that a high flux of H atmos is the key to the deposition profile control. The mass density of the films and their Raman spectrum have shown that their structure is a-C:H.

  • Effects of nanoparticle incorporation on properties of microcrystalline films deposited using multi-hollow discharge plasma CVD

    Yeonwon Kim, Takeaki Matsunaga, Kenta Nakahara, Hyunwoong Seo, Kunihiro Kamataki, Giichiro Uchida, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    SURFACE & COATINGS TECHNOLOGY   228   S550 - S553   2013年8月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.surfcoat.2012.04.029

  • Observation of nanoparticle growth process using a high speed camera 査読

    Y. Morita, S. Iwashita, D. Yamashita, G. Uchida, K. Kamataki, H. Seo, N. Itagaki, K. Koga, M. Shiratani

    Proceedings of 21st International Symposium on Plasma Chemistry   264   2013年8月

     詳細を見る

    記述言語:その他  

    Observation of nanoparticle growth process using a high speed camera
    Time evolution of spatial profile of nanoparticle amount in low pressure reactive discharge plasmas have been measured to study effects of amplitude modulation of the plasmas on particle growth in the initial growth phase. Amplitude modulation of discharge voltage leads to oscillate nanoparticle amount and their spatial profile. Growth of nanoparticles is suppressed by increasing the AM frequency.

  • Mass density control of carbon films deposited by H-assisted plasma CVD method

    Tatsuya Urakawa, Hidehumi Matsuzaki, Daisuke Yamashita, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani, Yuichi Setsuhara, Makoto Sekine, Masaru Hori

    SURFACE & COATINGS TECHNOLOGY   228   S15 - S18   2013年8月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.surfcoat.2012.10.002

  • Effects of DC substrate bias voltage on dust flux in the Large Helical Device

    Kazunori Koga, Katsushi Nishiyama, Yasuhiko Morita, Giichiro Uchida, Daisuke Yamashita, Kunihiro Kamataki, Hyunwoong Seo, Naho Itagaki, Masaharu Shiratani, Naoko Ashikawa, Suguru Masuzaki, Kiyohiko Nishimura, Akio Sagara

    JOURNAL OF NUCLEAR MATERIALS   438   S727 - S730   2013年7月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.jnucmat.2013.01.154

  • Discharge power dependence of carbon dust flux in a divertor simulator

    Katsushi Nishiyama, Yasuhiko Morita, Giichiro Uchida, Daisuke Yamashita, Kunihiro Kamataki, Hyunwoong Seo, Naho Itagaki, Kazunori Koga, Masaharu Shiratani, Naoko Ashikawa, Suguru Masuzaki, Kiyohiko Nishimura, Akio Sagara, Sven Bornholdt, Holger Kersten

    JOURNAL OF NUCLEAR MATERIALS   438   S788 - S791   2013年7月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.jnucmat.2013.01.169

  • Transport control of dust particles via the electrical asymmetry effect: experiment, simulation and modelling

    Shinya Iwashita, Edmund Schuengel, Julian Schulze, Peter Hartmann, Zoltan Donko, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani, Uwe Czarnetzki

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   46 ( 24 )   2013年6月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1088/0022-3727/46/24/245202

  • Analysis on the effect of polysulfide electrolyte composition for higher performance of Si quantum dot-sensitized solar cells

    Hyunwoong Seo, Yuting Wang, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    ELECTROCHIMICA ACTA   95   43 - 47   2013年4月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.electacta.2013.02.026

  • ナノ材料のプラズマプロセシングの研究の現状と将来 招待 査読

    白谷 正治, 古閑 一憲, 内田 儀一郎, Hyunwoong SEO, 板垣 奈穂, 岩下 伸也

    表面科学   34 ( 10 )   520 - 527   2013年1月

     詳細を見る

    記述言語:日本語  

    This paper reviews production of nanoparticles using low pressure reactive plasmas and its application to quantum dot sensitized solar cells. For the method, nanoparticles of several nm in size with a small size dispersion are produced in gas phase using reactive plasmas, and then the nanoparticles and radicals are co-deposited on a substrate. This method realizes one-step deposition of nanoparticle composite films in a controllable way.

    DOI: 10.1380/jsssj.34.520

  • H-2/N-2 Plasma Etching Rate of Carbon Films Deposited by H-Assisted Plasma Chemical Vapor Deposition

    Tatsuya Urakawa, Ryuhei Torigoe, Hidefumi Matsuzaki, Daisuke Yamashita, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani, Yuichi Setsuhara, Keigo Takeda, Makoto Sekine, Masaru Hori

    JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 1 )   2013年1月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/JJAP.52.01AB01

  • Dust particle formation due to interaction between graphite and helicon deuterium plasmas

    Shinya Iwashita, Katsushi Nishiyama, Giichiro Uchida, Hyunwoong Seo, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    FUSION ENGINEERING AND DESIGN   88 ( 1 )   28 - 32   2013年1月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.fusengdes.2012.10.002

  • Effects of Hydrogen Dilution on ZnO Thin Films Fabricated via Nitrogen-Mediated Crystallization

    Iping Suhariadi, Koichi Matsushima, Kazunori Kuwahara, Koichi Oshikawa, Daisuke Yamashita, Hyunwoong Seo, Giichiro Uchida, Kunihiro Kamataki, Kazunori Koga, Masaharu Shiratani, Sven Bornholdt, Holger Kersten, Harm Wulff, Naho Itagaki

    JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 1 )   2013年1月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/JJAP.52.01AC08

  • High Amount Cluster Incorporation in Initial Si Film Deposition by SiH4 Plasma Chemical Vapor Deposition

    Yeonwon Kim, Kosuke Hatozaki, Yuji Hashimoto, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani

    JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 1 )   2013年1月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/JJAP.52.01AD01

  • Improvement of Si Adhesion and Reduction of Electron Recombination for Si Quantum Dot-Sensitized Solar Cells

    Hyunwoong Seo, Yuting Wang, Muneharu Sato, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 1 )   2013年1月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/JJAP.52.01AD05

  • The reduction of charge recombination and performance enhancement by the surface modification of Si quantum dot-sensitized solar cell

    Hyunwoong Seo, Yuting Wang, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    ELECTROCHIMICA ACTA   87   213 - 217   2013年1月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.electacta.2012.09.087

  • Sputter deposition of Epitaxial Zinc-Indium Oxynitride Films for Excitonic Transistors 査読

    N. Itagaki, K. Matsushima, T. Hirose, K. Kuwahara, D. Yamashita, H. Seo, K. Kamataki, G. Uchida, K. Koga, M. Shiratani

    Proc. International Symposium on Dry Process   34   97 - 98   2012年11月

     詳細を見る

    記述言語:その他  

    Sputter deposition of Epitaxial Zinc-Indium Oxynitride Films for Excitonic Transistors

  • Growth Control of Dry Yeast Using Scalable Atmospheric-Pressure Dielectric Barrier Discharge Plasma Irradiation

    Satoshi Kitazaki, Kazunori Koga, Masaharu Shiratani, Nobuya Hayashi

    JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 11 )   2012年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1143/JJAP.51.11PJ02

  • Control of radial density profile of nano-particles produced in reactive plasma by amplitude modulation of radio frequency discharge voltage

    Kunihiro Kamataki, Kazunori Koga, Giichiro Uchida, Naho Itagaki, Daisuke Yamashita, Hidefumi Matsuzaki, Masaharu Shiratani

    THIN SOLID FILMS   523   76 - 79   2012年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.tsf.2012.07.059

  • Effects of crystalline nanoparticle incorporation on growth, structure, and properties of microcrystalline silicon films deposited by plasma chemical vapor deposition

    Yeonwon Kim, Takeaki Matsunaga, Kenta Nakahara, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani

    THIN SOLID FILMS   523   29 - 33   2012年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.tsf.2012.06.023

  • High quality epitaxial ZnO films grown on solid-phase crystallized buffer layers

    Kazunari Kuwahara, Naho Itagaki, Kenta Nakahara, Daisuke Yamashita, Giichiro Uchida, Kunihiro Kamataki, Kazunori Koga, Masaharu Shiratani

    THIN SOLID FILMS   520 ( 14 )   4674 - 4677   2012年5月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.tsf.2011.10.136

  • In situ analysis of size distribution of nano-particles in reactive plasmas using two dimensional laser light scattering method

    K. Kamataki, Y. Morita, M. Shiratani, K. Koga, G. Uchida, N. Itagaki

    JOURNAL OF INSTRUMENTATION   7   2012年4月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1088/1748-0221/7/04/C04017

  • ZnO:Al Thin Films with Buffer Layers Fabricated via Nitrogen Mediated Crystallization: Effects of N2/Ar Gas Flow Rate Ratio 査読

    I. Suhariadi, N. Itagaki, K. Kuwahara, K. Oshikawa, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, K. Nakahara, M. Shiratani

    Trans. Mater. Res. Soc. Jpn.   37 ( 2 )   165 - 168   2012年1月

     詳細を見る

    記述言語:英語  

    ZnO:Al Thin Films with Buffer Layers Fabricated via Nitrogen Mediated Crystallization: Effects of N2/Ar Gas Flow Rate Ratio
    Effects of N2/Ar gas flow rate ratio on the crystallinity of sputtered ZnO films fabricated via nitrogen mediated crystallization (NMC) have been clarified. Introduction of small amount of N2 (N2/Ar = 4/20.5 sccm) drastically improves the crystal orientation and enlarges grain size of the NMC-ZnO films, where FWHM of XRD patterns for 2θ-ω and ω scan of (002) plane are 0.17° and 2.6°, respectively. A further increase in N2/Ar flow rate ratio deteriorates the crystallinity, since excess N atoms in the films disarrange the crystal structure of ZnO. Furthermore, ZnO:Al (AZO) films with high crystallinity have been successfully fabricated by utilizing the NMC-ZnO films deposited at N2/Ar = 4/20.5 sccm as buffer layers. 100-nm-thick AZO films with a resistivity of 6.8×10-4 Ωcm and an optical transmittance higher than 80&#37; in a wide wavelength range of 500 nm to 1500 nm has been obtained.

    DOI: 10.14723/tmrsj.37.165

  • Pulmonary Toxicity of Indium Tin Oxide and Copper Indium Gallium Diselenide

    Akiyo Tanaka, Miyuki Hirata, Kazunori Koga, Makiko Nakano, Kazuyuki Omae, Yutaka Kiyohara

    MRS Proceedings   1469   2012年1月

     詳細を見る

    記述言語:その他   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1557/opl.2012.1074

  • Growth Enhancement of Radish Sprouts Induced by Low Pressure O-2 Radio Frequency Discharge Plasma Irradiation

    Satoshi Kitazaki, Kazunori Koga, Masaharu Shiratani, Nobuya Hayashi

    JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 1 )   2012年1月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1143/JJAP.51.01AE01

  • Combinatorial Deposition of Microcrystalline Silicon Films Using Multihollow Discharge Plasma Chemical Vapor Deposition

    Kazunori Koga, Takeaki Matsunaga, Yeonwon Kim, Kenta Nakahara, Daisuke Yamashita, Hidefumi Matsuzaki, Kunihiro Kamataki, Giichiro Uchida, Naho Itagaki, Masaharu Shiratani

    JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 1 )   2012年1月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1143/JJAP.51.01AD02

  • Deposition of Cluster-Free B-doped Hydrogenated Amorphous Silicon Films Using SiH4+B10H14 Multi-Hollow Discharge Plasma Chemical Vapor Deposition

    Kazunori Koga, Kenta Nakahara, Yeon-Won Kim, Takeaki Matsunaga, Daisuke Yamashita, Hidefumi Matsuzaki, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Masaharu Shiratani

    JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 1 )   2012年1月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1143/JJAP.51.01AD03

  • Effect of Nitridation of Si Nanoparticles on the Performance of Quantum-Dot Sensitized Solar Cells

    Giichiro Uchida, Kosuke Yamamoto, Muneharu Sato, Yuki Kawashima, Kenta Nakahara, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

    JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 1 )   2012年1月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1143/JJAP.51.01AD01

  • Impacts of Amplitude Modulation of RF Discharge Voltage on the Growth of Nanoparticles in Reactive Plasmas

    Kunihiro Kamataki, Hiroshi Miyata, Kazunori Koga, Giichiro Uchida, Naho Itagaki, Masaharu Shiratani

    APPLIED PHYSICS EXPRESS   4 ( 10 )   2011年10月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1143/APEX.4.105001

  • Comparison between silicon thin films with and without incorporating crystalline silicon nanoparticles into the film

    Kazunori Koga, Takeaki Matsunaga, William Makoto Nakamura, Kenta Nakahara, Yuuki Kawashima, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Masaharu Shiratani

    THIN SOLID FILMS   519 ( 20 )   6896 - 6898   2011年8月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.tsf.2011.01.408

  • Redox Characteristics of Thiol Compounds Using Radicals Produced by Water Vapor Radio Frequency Discharge

    Nobuya Hayashi, Akari Nakahigashi, Masaaki Goto, Satoshi Kitazaki, Kazunori Koga, Masaharu Shiratani

    JAPANESE JOURNAL OF APPLIED PHYSICS   50 ( 8 )   2011年8月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1143/JJAP.50.08JF04

  • Nano-factories in plasma: present status and outlook

    Masaharu Shiratani, Kazunori Koga, Shinya Iwashita, Giichiro Uchida, Naho Itagaki, Kunihiro Kamataki

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   44 ( 17 )   2011年5月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1088/0022-3727/44/17/174038

  • Zno films with buffer layers crystallized via nitrogen mediation: Effects of deposition temperature of buffer layers

    K. Kuwahara, N. Itagaki, K. Nakahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani

    Proc. PVSEC-21   4D-2P-11   2011年1月

     詳細を見る

    記述言語:その他  

    Zno films with buffer layers crystallized via nitrogen mediation: Effects of deposition temperature of buffer layers

  • Highly Conducting and Very Thin ZnO:Al Films with ZnO Buffer Layer Fabricated by Solid Phase Crystallization from Amorphous Phase

    Naho Itagaki, Kazunari Kuwahara, Kenta Nakahara, Daisuke Yamashita, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani

    APPLIED PHYSICS EXPRESS   4 ( 1 )   2011年1月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1143/APEX.4.011101

  • Combinatorial study of substrate temperature dependence on properties of silicon films deposited using multihollow discharge plasma CVD 査読

    Y. Kim, T. Matsunaga, Y. Kawashima, D. Yamashita, K. Kamataki, N. Itagaki, G. Uchida, K. Koga, M. Shiratani

    POL08   2011年1月

     詳細を見る

    記述言語:その他  

    Combinatorial study of substrate temperature dependence on properties of silicon films deposited using multihollow discharge plasma CVD
    A combinatorial technique using a multi-hollow discharge plasma CVD method has been employed to investigate effects of substrate temperature on hydrogenated microcrystalline silicon (?c-Si:H) film growth. No film is deposited near the discharge region RT to 350°C, whereas the area of no film region decreases with increasing the substrate temperature. This is attributed to competitive reactions between Si etching by H atoms and Si deposition. The area of microcrystalline Si region increases with the substrate temperature due to high surface diffusion rate of Si containing radical. These results show that the process window of μc-Si:H films becomes wider for the higher substrate temperature due to two reasons: 1) the lower Si etching rate and 2) the longer surface migration length of Si containing radicals. The defect density decreases significantly with increasing Ts from 6.24 × 10 16 cm -3 for Ts =100 o C down to 6.26 × 10 15 cm -3 for T s =300 o C.

  • Impacts of Plasma Fluctuations on Growth of Nano-Particles in Reactive Plasma

    K. Kamataki, H. Miyata, K. Koga, G. Uchida, N. Itagaki, D. Yamashita, H. Matsuzaki, M. Shiratani

    D13-318   2011年1月

     詳細を見る

    記述言語:その他  

    Impacts of Plasma Fluctuations on Growth of Nano-Particles in Reactive Plasma

  • Collection of carbon dust particles formed due to plasma-wall interactions between high density H2 plasma and carbon wall onto substrates by applying local DC bias voltage

    K. Nishiyama, Y. Morita, D. Yamashita, K. Kamataki, G. Uchida, H. Seo, N. Itagaki, K. Koga, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, the LHD Experimental Group, S. Bornholdt, H. Kersten

    Proc. Plasma Conf. 2011   24P094-O   2011年1月

     詳細を見る

    記述言語:その他  

    Collection of carbon dust particles formed due to plasma-wall interactions between high density H2 plasma and carbon wall onto substrates by applying local DC bias voltage
    We collected dust particles generated by interaction between a plasma and a carbon target in helicon discharge reactor, by which diverter plasmas in fusion devices are simulated. The dust particles are classified into three kinds: small spherical particles, agglomerates, and large flakes, suggesting three formation mechanisms: chemical vapor deposition (CVD) growth, agglomeration, and peeling from redeposited layer on the reactor wall. The area density and flux towards substrates of dust particles exponentially increase with the substrate bias voltage. The energy influx of plasmas towards the target and ion density were measured to clarify the dust formation mechanisms. They are nearly constant irrespective of the substrate bias voltage suggesting that the production rate of dust particles does not depend on the substrate bias voltage and their collection efficiency does.

  • Deposition of cluster-free a-Si:H films using cluster eliminating filter

    K. Nakahara, K. Hatozaki, Y. Hashimoto, T. Matsunaga, M. Sato, D. Yamashita, H. Matsuzaki, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    Proc. Plasma Conf. 2011   24P010-O   2011年1月

     詳細を見る

    記述言語:その他  

    Deposition of cluster-free a-Si:H films using cluster eliminating filter
    We have succeeded in deposition of highly stable a-Si:H films at a rate of 3 nm/s. To evaluate their performance as an I layer of PIN solar cells, Fill Factor (FF) of N-type c-Si/a-Si:H/Ni Schottky cells with cluster free a-Si:H films were measured. High quality stable a-Si:H films, were deposited with a multi-hollow discharge plasma CVD reactor together with a cluster-eliminating filter. Initial FF of the cell is 0.521, whereas stabilized FF is 0.495 that is 4.99&#37; lower than the initial FF. Our multi-hollow discharge plasma CVD method is useful to fabricate highly stable a-Si:H solar cells.

  • Effects of electrolyte on performance of quantum dot-sensitized solar cells using Si nanoparticles synthesized by multi-hollow discharge plasma CVD

    Y. Wang, M. Sato, H. Seo, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    Proc. Plasma Conf. 2011   23P013-O   2011年1月

     詳細を見る

    記述言語:その他  

    Effects of electrolyte on performance of quantum dot-sensitized solar cells using Si nanoparticles synthesized by multi-hollow discharge plasma CVD
    Effects of electrolyte on performance of Si QDSCs were investigated. We successfully fabricated an efficient polysulfide electrolyte based on the solvent mixed with water and methanol at a volume ratio of 3:7. The optimal electrolyte contains 1.0M Na2S, 0.5M S and 0.2M KCl. By introducing different ingredients with proper concentration, Jsc, Voc and fill factor are much improved. The efficiency of Si QDSCs using optimized electrolyte is 0.027&#37;

  • Effects of N2 gas addition to sputtering plasma on properties of epitaxial ZnO films

    K. Kuwahara, N. Itagaki, K. Nakahara, D. Yamashita, Seo H, G. Uchida, K. Kamataki, K. Koga, M. Shiratani

    Proc. Plasma Conf. 2011   24P008-O   2011年1月

     詳細を見る

    記述言語:その他  

    Effects of N2 gas addition to sputtering plasma on properties of epitaxial ZnO films
    Effects of N2/Ar flow rate ratio on properties of ZnO films fabricated via nitrogen mediated crystallization (NMC) have been studied. NMC-ZnO films are deposited by RF magnetron sputtering using Ar-N2 mixed gas. X-ray diffraction (XRD) analysis shows that the crystallinity of NMC-ZnO films is improved by addition of a small amount of N2 to sputtering atmosphere (N2/(Ar+N2) flow ratio of 8&#37;). By using the NMC-ZnO films as homo-buffer layers, ZnO films with high crystallinity are deposited by RF magnetron sputtering. The full width at half-maximum of XRD patterns for ω scan of (002) plane are 0.061°, being significantly small compared with 0.49° for the films without buffer layers. A further increase in N2/Ar flow rate ratio deteriorates the crystallinity because excess N atoms in the films disarrange the crystal structure of ZnO. The results indicate that utilizing NMC buffer layers deposited at an adequate N2 partial pressure is very promising to obtain epitaxial ZnO films with high crystallinity.

  • Effects of nanoparticle incorporation on Si thin films deposited by plasma CVD

    M. Shiratani, Y. Kim, T. Matsunaga, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga

    Proc. Plasma Conf. 2011   24G06   2011年1月

     詳細を見る

    記述言語:その他  

    Effects of nanoparticle incorporation on Si thin films deposited by plasma CVD
    We have investigated effects of nanoparticle inclusion on properties of a-Si:H films and mc-Si:H films using the multi-hollow discharge plasma CVD method. Minor deposition species (nanoparticles in this study) modify considerably properties of a-Si:H films and mc-Si:H films

  • Influence of nano-particles on multi-hollow discharge plasma for microcrystalline silicon thin films deposition

    T. Matsunaga, Y. Kim, K. Koga, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani

    Proc. Plasma Conf. 2011   24P015-O   2011年1月

     詳細を見る

    記述言語:その他  

    Influence of nano-particles on multi-hollow discharge plasma for microcrystalline silicon thin films deposition
    Effects of nano-particles on formation kinetics of microcrystalline silicon films were studied by X-ray diffraction spectroscopy (XRD) and optical emission spectroscopy (OES). Volume fraction of (220) orientation crystals of films without incorporating nano-particles is higher than that of those with nano-particles. The IH?/ISi* value in the region with nano-particles is slightly higher than that in the region without nano-particles. The ISi*/ISiH* value is almost the same as that in the region with and without nano-particles. These results suggest that (220) orientation crystal growth is suppressed by incorporation of nano-particles.

  • Low resistive ZnO:Al films with ZnO buffer layers fabricated by Ar/N2 magnetron sputtering

    N. Itagaki, K. Kuwahara, K. Nakahara, D. Yamashita, K. Kamataki, H. Seo, G. Uchida, K. Koga

    Proc. Plasma Conf. 2011   24G6   2011年1月

     詳細を見る

    記述言語:その他  

    Low resistive ZnO:Al films with ZnO buffer layers fabricated by Ar/N2 magnetron sputtering
    Low resistive ZnO:Al (AZO) films with uniform spatial distribution have been obtained by utilizing buffer layers fabricated by Ar/N2 magnetron sputtering. For 100 nm-thick AZO films, the averaged grain size of AZO films with buffer layers is 65 nm, which is 1.8 times larger than that of the films without buffer layers. This increase in the grain size of AZO films is due to the low grain density of buffer layers. As a result, the resistivity is drastically reduced. At the area facing the target erosion, the resistivity reduced from 2.27 m??cm for the films without buffer layers to 0.50 m??cm for our films, consequently, the spatial distribution of the resistivity is significantly improved. These results reveal that our method described here is full of promise for fabrication of ZnO-based TCO materials.

  • Radical Flux Evaluation to Microcrystalline Silicon Films Deposited by Multi-Hollow Discharge Plasma CVD

    Y. Kim, T. Matsunaga, H. Seo, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    Proc. Plasma Conf. 2011   24P011-O   2011年1月

     詳細を見る

    記述言語:その他  

    Radical Flux Evaluation to Microcrystalline Silicon Films Deposited by Multi-Hollow Discharge Plasma CVD
    To evaluate radical fluxes for microcrystalline silicon film deposition, Si films were deposited in a combinatorial way using a multi-hollow discharge plasma CVD method. Film crystallinity varied with the distance from the powered electrode. Based on the film deposition rate and Raman crystallinity, we proposed a method to estimate hydrogen flux. This evaluation of hydrogen flux is one of useful way to understand a process window of ?c-Si:H films.

  • Study of interaction between plasma fluctuation and nucleation of nanoparticle in plasma CVD

    K. Kamataki, K. Koga, G. Uchida, H. Seo, N. Itagaki, M. Shiratani

    Proc. Plasma Conf. 2011   24P014-O   2011年1月

     詳細を見る

    記述言語:その他  

    Study of interaction between plasma fluctuation and nucleation of nanoparticle in plasma CVD
    We have investigated effects of plasma fluctuation on the growth of nanoparticles in capacitively-coupled rf discharges with amplitude modulation. Nanoparticles grow more slowly for higher AM levels, that is they have 7 times higher density and 23&#37; smaller size. This AM method is useful for the production of a large amount of nanoparticles with a small size

  • Combinatorial study on effects of substatrate temperature of silicon film deposition using multi-hollow discharge plasma cvd

    Y. Kim, T. Matsunaga, D. Yamashita, K. Kamataki, N. Itagaki, G. Uchida, K. Koga, M. Shiratani

    Proc. PVSEC-21   3D-2P-09   2011年1月

     詳細を見る

    記述言語:その他  

    Combinatorial study on effects of substatrate temperature of silicon film deposition using multi-hollow discharge plasma cvd

  • Defect density of cluster-free a-si:h films deposited by multi-hollow discharge plasma CVD

    K. Nakahara, K. Hatozaki, M. Sato, T. Matsunaga, D. Yamashita, H. Matsuzaki, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    Proc. PVSEC-21   3D-2P-20   2011年1月

     詳細を見る

    記述言語:その他  

    Defect density of cluster-free a-si:h films deposited by multi-hollow discharge plasma CVD

  • Effects of nano-particles on (220) crystal orientation of microcrystallite silicon thin films

    T. Matsunaga, Y. Kim, K. Koga, G. Uchida, K. Kamataki, N. Itagaki, M. Shiratani

    Proc. PVSEC-21   4D-2P-16   2011年1月

     詳細を見る

    記述言語:その他  

    Effects of nano-particles on (220) crystal orientation of microcrystallite silicon thin films

  • Properties and performance of si quantum dot-sensitized solar cells with low temperature titania paste

    Y. Wang, M. Sato, T. Matsunaga, N. Itagaki, H. Seo, G. Uchida, K. Koga, M. Shiratani

    Proc. PVSEC-21   3D-5P-09   2011年1月

     詳細を見る

    記述言語:その他  

    Properties and performance of si quantum dot-sensitized solar cells with low temperature titania paste

  • Zinc oxide-based transparent conducting films with buffer layers fabricated via nitrogen-mediated crystallization

    N. Itagaki, K. Kuwahara, D. Yamashita, G. Uchida, K. Kamataki, K. Koga, M. Shiratani

    Proc. PVSEC-21   4D-2P-10   2011年1月

     詳細を見る

    記述言語:その他  

    Zinc oxide-based transparent conducting films with buffer layers fabricated via nitrogen-mediated crystallization

  • High rate deposition of highly stable a-Si:H films using multi-hollow discharges for thin films solar cells

    William Makoto Nakamura, Hidefumi Matsuzaki, Hiroshi Sato, Yuuki Kawashima, Kazunori Koga, Masaharu Shiratani

    SURFACE & COATINGS TECHNOLOGY   205   S241 - S245   2010年12月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.surfcoat.2010.07.081

  • 低圧プラズマによる酸化還元反応および植物成長への影響

    林 信哉, 中東 朱里, 秋吉 雄介, 北崎 訓, 古閑 一憲, 白谷 正治

    電気学会研究会資料. PST, プラズマ研究会   2010 ( 65 )   33 - 36   2010年12月

     詳細を見る

    記述言語:日本語  

  • High rate deposition of cluster-suppressed amorphous silicon films deposited using a multi-hollow discharge plasma CVD

    Kazunori Koga, Hiroshi Sato, Yuuki Kawashima, William M. Nakamura, Masaharu Shiratani

    Materials Research Society Symposium Proceedings   1210   217 - 222   2010年12月

     詳細を見る

    記述言語:その他  

    High rate deposition of cluster-suppressed amorphous silicon films deposited using a multi-hollow discharge plasma CVD
    We have examined effects of gas velocity and gas pressure on a deposition rate of hydrogenated amorphous silicon (a-Si:H) films and on a volume fraction of clusters in the films using a multi-hollow discharge plasma CVD method. The maximum deposition rate realized for each pressure exponentially increases with decreasing the pressure from 1.0 Torr to 0.1 Torr, whereas the volume fraction of clusters very slightly increases with increasing the deposition rate. Based on the results, we have succeeded in depositing highly stable a-Si:H films of 4.9 × 1015cm-3 in a stabilized defect density at a rate of 3.0nm/s using the method. © 2010 Materials Research Society.

  • Deposition of a-Si: H Films with High Stability against Light Exposure by Reducing Deposition of Nanoparticles Formed in SiH4 Discharges

    Kazunori Koga, Masaharu Shiratani, Yukio Watanabe

    Industrial Plasma Technology: Applications from Environmental to Energy Technologies   247 - 257   2010年10月

     詳細を見る

    記述言語:英語  

    DOI: 10.1002/9783527629749.ch20

  • Nanoblock Assembly Using Pulse RF Discharges with Amplitude Modulation

    Shinya Iwashita, Hiroshi Miyata, Kazunori Koga, Masaharu Shiratani

    Industrial Plasma Technology: Applications from Environmental to Energy Technologies   377 - 383   2010年10月

     詳細を見る

    記述言語:英語  

    DOI: 10.1002/9783527629749.ch31

  • Deposition profile control of carbon films on patterned substrates using a hydrogen-assisted plasma CVD method

    Takuya Nomura, Kazunori Koga, Kazunori Koga, Masaharu Shiratani, Masaharu Shiratani, Yuichi Setsuhara, Yuichi Setsuhara, Makoto Sekine, Makoto Sekine, Masaru Hori, Masaru Hori

    Materials Research Society Symposium Proceedings   1222   203 - 207   2010年8月

     詳細を見る

    記述言語:その他  

    Deposition profile control of carbon films on patterned substrates using a hydrogen-assisted plasma CVD method
    We have studied effects of H atom source on deposition profiles of carbon films, deposited by H assisted anisotropic plasma CVD method. Deposition rate normalized by that for the aspect ratio of 1 at sidewall and bottom decreases with increasing discharge power of H atom source from 0 W to 500 W, because the incident H atom flux per surface area in a trench increases and H atoms etch carbon films. © 2010 Materials Research Society.

  • Review of pulmonary toxicity of indium compounds to animals and humans

    Akiyo Tanaka, Miyuki Hirata, Yutaka Kiyohara, Makiko Nakano, Kazuyuki Omae, Masaharu Shiratani, Kazunori Koga

    THIN SOLID FILMS   518 ( 11 )   2934 - 2936   2010年3月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.tsf.2009.10.123

  • Substrate Temperature Dependence of Sticking Probability of SiOx-CH3 Nano-Particles

    H. Miyata, K. Nishiyama, S. Iwashita, H. Matsuzaki, D. Yamashita, K. Kamataki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani

    Proc. of International Symposium on Dry Process   43 - 44   2010年1月

     詳細を見る

    記述言語:その他  

    Substrate Temperature Dependence of Sticking Probability of SiOx-CH3 Nano-Particles

  • Carbon dust particles generated due to H2 plasma-carbon wall interaction 査読

    H. Miyata, K. Nishiyama, S. Iwashita, H. Matsuzaki, D. Yamashita, G. Uchida, N. Itagaki, K. Kamataki, K. Koga, M. Shiratani, N. Ashikawa, S. Muzaki, K. Nishimura, A. Sagara, LHD experimental group

    Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma   55 ( 7 )   CTP.00114   2010年1月

     詳細を見る

    記述言語:その他  

    Carbon dust particles generated due to H2 plasma-carbon wall interaction

  • Generation of nitridated silicon particles and their thin film deposition using double multi-hollow discharges 査読

    G. Uchida, M. Sato, Y. Kawashima, K. Nakahara, K. Yamamoto, T. Matsunaga, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani

    Proc. of 63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasma   55 ( 7 )   CTP.00093   2010年1月

     詳細を見る

    記述言語:その他  

    Generation of nitridated silicon particles and their thin film deposition using double multi-hollow discharges

  • Optical and Electrical Properties of Particle Composite Thin Films deposited in SiH4/H2 and N2 Multi-Hollow Discharges

    G. Uchida, M. Sato, Y. Kawashima, K. Yamamoto, K. Nakahara, D. Yamashita, H. Matsuzaki, K. Kamataki, N. Itagaki, K. Koga, M. Shiratani, M. Kondo

    Proc. of MNC2010   12D-11-66   2010年1月

     詳細を見る

    記述言語:その他  

    Optical and Electrical Properties of Particle Composite Thin Films deposited in SiH4/H2 and N2 Multi-Hollow Discharges

  • P-type sp(3)-bonded BN/n-type Si heterodiode solar cell fabricated by laser-plasma synchronous CVD method

    Shojiro Komatsu, Yuhei Sato, Daisuke Hirano, Takuya Nakamura, Kazunori Koga, Atsushi Yamamoto, Takahiro Nagata, Toyohiro Chikyo, Takayuki Watanabe, Takeo Takizawa, Katsumitsu Nakamura, Takuya Hashimoto, Masaharu Shiratani

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   42 ( 22 )   2009年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1088/0022-3727/42/22/225107

  • Two-dimensional spatial profile of volume fraction of nanoparticles incorporated into a-Si : H films deposited by plasma CVD

    William Makoto Nakamura, Hiroomi Miyahara, Hiroshi Sato, Hidefumi Matsuzaki, Kazunori Koga, Masaharu Shiratani

    IEEE TRANSACTIONS ON PLASMA SCIENCE   36 ( 4 )   888 - 889   2008年8月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1109/TPS.2008.923830

  • Discharge power dependence of H<inf>α</inf>intensity and electron density of Ar + H<inf>2</inf>discharges in H-assisted plasma CVD reactor

    202 ( 22-23 )   5659 - 5662   2008年8月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We have realized anisotropic deposition of Cu, for which Cu is preferentially filled from the bottom of trenches without being deposited on the sidewall of trenches, using H-assisted plasma CVD. To obtain information about a discharge condition to realize a high deposition rate, we have studied dependence of Hα656.3 nm and Ar 811.5 nm intensities and electron density in the main discharge on the main discharge power, Pm, and in the discharge of H atom source on the discharge power of H atom source, PH, as a parameter of a gas flow rate ratio R = H2/(H2+ Ar). The results suggest that a high electron density in the main discharge and high fluxes of ions and H atoms to a substrate, all of which are needed for deposition of high purity Cu at a high deposition rate, are realized for Pm= 45 W, PH= 500 W, and R = 3.3&#37;. © 2008 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.surfcoat.2008.06.108

  • Nanoparticle coagulation in fractionally charged and charge fluctuating dusty plasmas

    Shota Nunomura, Masaharu Shiratani, Kazunori Koga, Michio Kondo, Yukio Watanabe

    PHYSICS OF PLASMAS   15 ( 8 )   2008年8月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1063/1.2972162

  • Temperature Dependence of Dielectric Constant of Nanoparticle Composite Porous Low-k Films Fabricated by Pulse Radio Frequency Discharge with Amplitude Modulation

    Shinya Iwashita, Michihito Morita, Hidefumi Matsuzaki, Kazunori Koga, Masaharu Shiratani

    JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 8 )   6875 - 6878   2008年8月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1143/JJAP.47.6875

  • Growth Control of Clusters in Reactive Plasmas and Application to High-Stability a-Si: H Film Deposition

    Yukio Watanabe, Masaharu Shiratani, Kazunori Koga

    Advanced Plasma Technology   227 - 242   2008年4月

     詳細を見る

    記述言語:英語  

    DOI: 10.1002/9783527622184.ch12

  • Transport of nano-particles in capacitively coupled rf discharges without and with amplitude modulation of discharge voltage

    Kazunori Koga, Shinya Iwashita, Masaharu Shiratani

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   40 ( 8 )   2267 - 2271   2007年4月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1088/0022-3727/40/8/S05

  • Single step method to deposit Si quantum dot films using H-2+SiH4VHF discharges and electron mobility in a Si quantum dot solar cell

    Masaharu Shiratani, Kazunori Koga, Soichiro Ando, Toshihisa Inoue, Yukio Watanabe, Shota Nunomura, Michio Kondo

    SURFACE & COATINGS TECHNOLOGY   201 ( 9-11 )   5468 - 5471   2007年2月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.surfcoat.2006.07.012

  • A device for trapping nano-particles formed in processing plasmas for reduction of nano-waste

    Shinya Iwashita, Kazunori Koga, Masaharu Shiratani

    SURFACE & COATINGS TECHNOLOGY   201 ( 9-11 )   5701 - 5704   2007年2月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.surfcoat.2006.07.060

  • Species responsible for Si-H-2 bond formation in a-Si : H films deposited using silane high frequency discharges

    M Shiratani, K Koga, N Kaguchi, K Bando, Y Watanabe

    THIN SOLID FILMS   506   17 - 21   2006年5月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.tsf.2005.08.015

  • Mechanism of Cu deposition from Cu(EDMDD)(2) using H-assisted plasma CVD

    K Takenaka, K Koga, M Shiratani, Y Watanabe, T Shingen

    THIN SOLID FILMS   506   197 - 201   2006年5月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.tsf.2005.08.028

  • Nano-particle formation due to interaction between H-2 plasma and carbon wall

    K Koga, Y Kitaura, M Shiratani, Y Watanabe, A Komori

    THIN SOLID FILMS   506   656 - 659   2006年5月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.tsf.2005.08.062

  • Production of crystalline Si nano-clusters using pulsed H-2+SiH(4)VHFdischarges

    T Kakeya, K Koga, M Shiratani, Y Watanabe, M Kondo

    THIN SOLID FILMS   506   288 - 291   2006年5月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.tsf.2005.08.090

  • In situ simple method for measuring size and density of nanoparticles in reactive plasmas

    S Nunomura, M Kita, K Koga, M Shiratani, Y Watanabe

    JOURNAL OF APPLIED PHYSICS   99 ( 8 )   2006年4月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1063/1.2189951

  • Plasma anisotropic CVD of high purity Cu using Cu(hfac)2 査読

    Masaharu Shiratani, Takao Kaji, Kazunori Koga, Yukio Watanabe, Tomohiro Kubota, Seiji Samukawa

    6th International Conference on Reactive Plasmas and 23rd Symposium on Plasma Processing   2006年1月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(その他学術会議資料等)  

    Plasma anisotropic CVD of high purity Cu using Cu(hfac)2

  • Cluster-eliminating filter for depositing cluster-free a-Si : H films by plasma chemical vapor deposition

    K Koga, N Kaguchi, K Bando, M Shiratani, Y Watanabe

    REVIEW OF SCIENTIFIC INSTRUMENTS   76 ( 11 )   1 - 4   2005年11月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1063/1.2126572

  • Control of deposition profile of copper for large-scale integration (LSI) interconnects by plasma chemical vapor deposition

    K Takenaka, M Shiratani, M Takeshita, M Kita, K Koga, Y Watanabe

    PURE AND APPLIED CHEMISTRY   77 ( 2 )   391 - 398   2005年2月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1351/pac200577020391

  • Correlation between volume fraction of clusters incorporated into a-Si : H films and hydrogen content associated with Si-H-2 bonds in the films

    K Koga, N Kaguchi, M Shiratani, Y Watanabe

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A   22 ( 4 )   1536 - 1539   2004年7月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1116/1.1763905

  • Anisotropic deposition of Cu in trenches by H-assisted plasma chemical vapor deposition

    K Takenaka, M Kita, T Kinoshita, K Koga, M Shiratani, Y Watanabe

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A   22 ( 4 )   1903 - 1907   2004年7月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1116/1.1738663

  • Carbon particle formation due to interaction between H-2 plasma and carbon fiber composite wall

    K Koga, R Uehara, Y Kitaura, M Shiratani, Y Watanabe, A Komori

    IEEE TRANSACTIONS ON PLASMA SCIENCE   32 ( 2 )   405 - 409   2004年4月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1109/TPS.2004.828129

  • Cluster-suppressed plasma CVD for deposition of high quality a-Si : H films

    M Shiratani, K Koga, Y Watanabe

    THIN SOLID FILMS   427 ( 1-2 )   1 - 5   2003年3月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/S0040-6090(02)01171-9

  • Cluśter-suppressed plasma chemical vapor deposition method for high quality hydrogenated amorphous silicon films

    41 ( 2B )   L168 - L170   2002年2月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We have developed a novel plasma chemical vapor deposition (PCVD) method for preparing high quality hydrogenated amorphous silicon (a-Si:H) films, which suppresses effectively growth of clusters by transporting them out of the reactor using gas flow and thermophoresis. By utilizing this cluster-suppressed PCVD method, we have demonstrated deposition of quite high quality a-Si:H films, microstructure parameter Rαof which can be reduced below 0.003. The decrease in Rαvalue is closely related to the decrease in cluster amount. Preliminary evaluation of fill factor (FF) of the a-Si:H Schottky solar cell of the a-Si:H films of Rα= 0.057 shows the high initial value FFi= 0.57 and high stabilized value after-light-soaking FFa= 0.53.

    DOI: 10.1143/JJAP.41.L168

  • H-assisted plasma CVD of Cu films for interconnects in ultra-large-scale integration

    Masaharu Shiratani, Hong Jie Jin, Kosuke Takenaka, Kazunori Koga, Toshio Kinoshita, Yukio Watanabe

    SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS   2 ( 3-4 )   505 - 515   2001年9月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/S1468-6996(01)00131-0

  • In situ observation of nucleation and subsequent growth of clusters in silane radio frequency discharges

    K Koga, Y Matsuoka, K Tanaka, M Shiratani, Y Watanabe

    APPLIED PHYSICS LETTERS   77 ( 2 )   196 - 198   2000年7月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1063/1.126922

  • Effects of gas temperature gradient, pulse discharge modulation, and hydrogen dilution on particle growth in silane RF discharges

    M Shiratani, S Maeda, K Koga, Y Watanabe

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   39 ( 1 )   287 - 293   2000年1月

     詳細を見る

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1143/JJAP.39.287

  • 非対称イオンシースにおける局所構造形成の観測

    古閑 一憲, 河合 良信

    九州大学大学院総合理工学報告   20 ( 2 )   157 - 161   1998年9月

     詳細を見る

    記述言語:日本語  

    When the ion sheath instability is excited, a local structure in the potential profile is found and the local structure in the ion saturation current profiles is observed near the sheath edge and inside the sheath for almost all bias voltages of the separation grid. The correlation between the local structure and the ion sheath instability is examined. The length between the local structure formed near the sheath edge in the ion saturation current profiles in the both sides is found to be in inverse proportion to the frequency of the instability. Furthermore, the experimental results are also compared with the virtual anode oscillations.

    DOI: 10.15017/17465

▼全件表示

書籍等出版物

▼全件表示

講演・口頭発表等

  • High Throughput Deposition of Hydrogenated Amorphous Carbon Films using High-Pressure Ar+CH4 Plasmas 国際会議

    ICMCTF2021  2021年4月 

     詳細を見る

    開催年月日: 2021年4月

    記述言語:英語   会議種別:口頭発表(一般)  

  • プラズマを用いてカーボンナノ粒子層を含むミルフィーユ型 a-C:H 膜の機械的特性

    古閑一憲, 黄成和, Y.Hao, 鎌滝晋礼, 奥村賢直, 板垣奈穂, 白谷正治

    第68回応用物理学会春季学術講演会  2021年3月 

     詳細を見る

    開催年月日: 2021年3月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:オンライン   国名:日本国  

  • クロージングリマークス(招待講演) 招待

    古閑一憲

    応用物理学会プラズマエレクトロニクス分科会30周年記念シンポジウム  2021年3月 

     詳細を見る

    開催年月日: 2021年3月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:オンライン   国名:日本国  

  • プラズマCVD中飛行時間によるカーボンナノ粒子サイズ制御

    古閑一憲, S. H. Hwang, Y. Hao, P. Attir, 奥村賢直,鎌滝晋礼,板垣奈穂, 白谷正治

    日本物理学会第76回年次大会  2021年3月 

     詳細を見る

    開催年月日: 2021年3月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:オンライン   国名:日本国  

  • Green Route for Nitrogen-Enriched Organic Manure Synthesis Using Plasma Technology(Invited) 招待 国際会議

    K. Koga

    ISPlasma2021/IC-PLANTS2021  2021年3月 

     詳細を見る

    開催年月日: 2021年3月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:日本国  

  • Influences of Plasma Treatment of Seeds on their Molecular Responses(Invited) 招待 国際会議

    K. Koga

    3rd International Workshop on Plasma Agriculture  2021年3月 

     詳細を見る

    開催年月日: 2021年2月 - 2021年3月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:ドイツ連邦共和国  

  • CVDプラズマ中のナノ粒子の成長制御と応用(招待講演) 招待

    古閑一憲

    第72回CVD研究会  2020年12月 

     詳細を見る

    開催年月日: 2020年12月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:オンライン   国名:日本国  

  • Impact of Plasma Treatment Time on the Barley Seeds using Electron Paramagnetic Resonance 国際会議

    K. Koga, P. Attri, T. Anan, R. Arita, H. Tanaka, T. Okumura, D. Yamashita, K. Matsuo, K. Kanataki, N. Itagaki, M. Shiratani, Y. Ishibashi

    2020年12月 

     詳細を見る

    開催年月日: 2020年12月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:日本国  

  • Role of seed coat color and harvest year on growth enhancement by plasma irradiation to seeds 国際会議

    K. Koga, P. Attri, K. Ishikawa, T. Okumura, K. Matsuo, D. Yamashita, K. Kamataki, N. Itagaki, M. Shiratani, V. Mildaziene

    The 73rd Annual Gaseous Electronics Conference  2020年10月 

     詳細を見る

    開催年月日: 2020年10月

    記述言語:英語   会議種別:口頭発表(一般)  

  • マルチホロー放電プラズマ CVDを用いて作製したカーボンナノ粒子輸送量に対する電極基板間距離の効果

    古閑一憲, S. H. Hwang, 奥村賢直, Y. Hao, 山下大輔, 松尾かよ, 板垣奈穂, 鎌滝晋礼, 白谷正治

    2020年度(第73回)電気・情報関係学会九州支部連合大会  2020年9月 

     詳細を見る

    開催年月日: 2020年9月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:オンライン   国名:日本国  

  • プラズマCVD技術文献のテキストマイニングを用いた単語のインパクトの解析

    古閑一憲, 奥村賢直, 鎌滝晋礼, 板垣奈穂, 白谷正治, 谷口雄太, 池田大輔

    第81回応用物理学会秋季学術講演会  2020年9月 

     詳細を見る

    開催年月日: 2020年9月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:オンライン   国名:日本国  

  • プラズマCVDを用いたa-Si:H堆積薄膜中のSi-H/Si-H2結合形成の活性化エネルギー

    古閑一憲, 鎌滝晋礼, 奥村賢直, 板垣奈穂, 白谷正治

    日本物理学会 2020年秋季大会  2020年9月 

     詳細を見る

    開催年月日: 2020年9月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:オンライン   国名:日本国  

  • プラズマと薄膜のナノ界面相互作用による結合形成の活性化エネルギー評価

    古閑一憲, 原尚志, 鎌滝晋礼, 板垣奈穂, 白谷正治

    日本物理学会第75回年次大会(2020年)  2020年3月 

     詳細を見る

    開催年月日: 2020年3月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:名古屋大学   国名:日本国  

  • ⾮平衡プラズマを⽤いたサイズ制御したカーボンナノ粒⼦の連続作 製と堆積

    古閑⼀憲, 黄成和, 石川健治, P. Attri, 松尾かよ, 山下⼤輔, 板垣奈穂, 鎌滝晋礼, 白谷正治

    第67回応用物理学会春季学術講演会  2020年3月 

     詳細を見る

    開催年月日: 2020年3月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:上智大学   国名:日本国  

  • ⾼温障害を持つイネ種⼦の発芽特性に対するプラズマ照射の効果

    古閑⼀憲, 石橋勇志, S. Chetphilin, 田中颯, 佐藤僚哉, 有田涼, 廣松真弥, 石川健治, P. Attri, 松尾かよ, 山下⼤輔, 板垣奈穂, 鎌滝晋礼, 白谷正治

    第67回応用物理学会春季学術講演会  2020年3月 

     詳細を見る

    開催年月日: 2020年3月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:上智大学   国名:日本国  

  • プラズマ照射種子を用いた圃場実験の結果報告(招待講演) 招待

    古閑⼀憲

    第1回プラズマ農業フィールドテスト研究会  2020年2月 

     詳細を見る

    開催年月日: 2020年2月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:Hotel & Resorts BEPPUWAN, 大分   国名:日本国  

  • プラズマ照射した種籾の圃場栽培試験

    古閑一憲, 佐藤僚哉, 吉田知晃, 有田涼, 田中颯, 廣松真弥, 鎌滝晋礼, 板垣奈穂, 白谷正治

    第36回プラズマ・核融合学会年会  2019年12月 

     詳細を見る

    開催年月日: 2019年11月 - 2019年12月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:中部大学   国名:日本国  

  • Metabolomics Approach for Studying Effects of Atmospheric Air Plasma Irradiation to Seeds (Keynote) 招待 国際会議

    K. Koga, M. Shiratani, V. Mildaziene

    29th Annual Meeting of MRS-J  2019年11月 

     詳細を見る

    開催年月日: 2019年11月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:日本国  

  • Impact of Atmospheric Pressure Plasma Irradiation to Seeds on Agricultural Productivity 国際会議

    K. Koga, M. Shiratani

    3rd Asia-Pacific Conference on Plasma Physics (AAPPS-DPP2019)  2019年11月 

     詳細を見る

    開催年月日: 2019年11月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:中華人民共和国  

  • Rate Limiting Factors of Low Pressure Plasma-catalytic CO2 Methanation Process 国際会議

    K. Koga, A. Yamamoto, K. Kamataki, N. Itagaki, M. Shiratani

    AVS 66th International Symposium & Exhibition  2019年10月 

     詳細を見る

    開催年月日: 2019年10月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:その他  

  • Non-equilibrium nanoparticle composite film process using reactive plasmas (Invited) 招待 国際会議

    K. Koga, M. Shiratani

    Advanced Metallization Conference 2019: 29th Asian Session (ADMETA Plus 2019)  2019年10月 

     詳細を見る

    開催年月日: 2019年10月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:日本国  

  • Ar+CH4プラズマCVDを用いて堆積した水素化アモルファスカーボン薄膜の堆積特性に対する電極基板間距離依存性

    古閑一憲, Sung Hwa Hwang, 鎌滝晋礼, 板垣奈穂, 白谷正治

    2019年度(第72回)電気・情報関係学会九州支部連合大会  2019年9月 

     詳細を見る

    開催年月日: 2019年9月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:九州工業大学   国名:日本国  

  • プラズマ生成前駆体制御による単分散ナノ粒子合成

    古閑 一憲, 鎌滝 晋礼, 白谷 正治

    2019年第80回応用物理学会秋季学術講演会  2019年9月 

     詳細を見る

    開催年月日: 2019年9月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:北海道大学   国名:日本国  

  • Plasmas - from Laboratory to Table - (Invited) 招待 国際会議

    K. Koga, M. Shiratani

    The 12th Asian-European International Conference on Plasma Surface Engineering (AEPSE2019)  2019年9月 

     詳細を見る

    開催年月日: 2019年9月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:大韓民国  

  • Synthesis and deposition of a-C:H nanoparticles using reactive plasmas with a fast gas flow 国際会議

    K. Koga, S. H. Hwang, K. Kamataki, N. Itagaki, M. Shiratani

    The Korea-Japan Workshop on Dust Particles in Plasmas  2019年8月 

     詳細を見る

    開催年月日: 2019年8月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:大韓民国  

  • Sputter deposition of wide bandgap (ZnO)x(AlN)1-x alloys: a new material system with tunable bandgap 国際会議

    S. Urakawa, N. Miyahara, D. Yamashita, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki

    XXXIV International Conference on Phenomena in Ionized Gases (XXXIV ICPIG) & 10th International Conference on Reactive Plasmas (ICRP-10)  2019年7月 

     詳細を見る

    開催年月日: 2019年7月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:日本国  

  • Growth Mechanism of Carbon Nanoparticles In Multi-Hollow Discharge Plasma Chemical Vapor Deposition (Invited) 招待 国際会議

    K. Koga, S. H. Hwang, K. Kamataki, N. Itagaki M. Shiratani

    XXXIV International Conference on Phenomena in Ionized Gases (XXXIV ICPIG) & 10th International Conference on Reactive Plasmas (ICRP-10)  2019年7月 

     詳細を見る

    開催年月日: 2019年7月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:日本国  

  • マルチホロー放電プラズマCVD法による高品質SiN膜の低温(100度)形成

    永石翔大, 佐々木勇輔, 鎌滝晋礼, 板垣奈穂, 古閑一憲, 白谷正治

    令和元年度日本表面真空学会 九州支部学術講演会(九州表面・真空研究会2019)  2019年6月 

     詳細を見る

    開催年月日: 2019年6月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:福岡大学   国名:日本国  

  • Deposition of Carbon Nanoparticles Using Multi-Hollow Discharge Plasma CVD for Synthesis of Carbon Nanoparticle Composite Films 国際会議

    K. Koga, S. H. Hwang, T. Nakatani, J. S. Oh, K. Kamataki, N. Itagaki, M.Shiratani

    46th International Conference on Metallurgical Coatings and Thin Films (ICMCTF 2019)  2019年5月 

     詳細を見る

    開催年月日: 2019年5月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:その他  

  • 微粒子プラズマにおける2体衝突運動の顕微高速観察

    古閑一憲, 大友洋, 真銅雅子, 鎌滝晋礼, 板垣奈穂, 白谷正治

    日本物理学会第74回年次大会(2019年)  2019年3月 

     詳細を見る

    開催年月日: 2019年3月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:九州大学   国名:日本国  

  • Spatial Profile of RONS Dose Supplied by a Scalable DBD Device 国際会議

    K. Koga, Y. Wada, R. Sato, R. Shimada, D. Yamashita, K. Kamataki, N. Itagaki, M. Shiratani, T. Kawasaki

    The 3rd Asian Applied Physics Conference  2018年12月 

     詳細を見る

    開催年月日: 2018年12月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:日本国  

  • カイワレ大根種皮の色素に対するプラズマ照射の効果

    古閑一憲, 嶋田凌太郎, 和田陽介, 佐藤僚哉, 山下大輔, 鎌滝晋礼, 板垣奈穂, 白谷正治, Vida Mildaziene

    第35回プラズマ・核融合学会年会  2018年12月 

     詳細を見る

    開催年月日: 2018年12月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:大阪大学   国名:日本国  

  • Evaluation of Amount of RONS Transport and Absorption of Seeds 国際会議

    K. Koga, Y. Wada, R. Sato, D. Yamashita, K. Kamataki, N. Itagaki, M. Shiratani

    2018 MRS Fall Meeting & Exhibit  2018年11月 

     詳細を見る

    開催年月日: 2018年11月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:その他  

  • Innovative Agricultural Productivity Improvement Using Atmospheric Pressure Plasmas (Invited) 招待 国際会議

    K. Koga, M. Shiratani

    2018 MRS Fall Meeting & Exhibit  2018年11月 

     詳細を見る

    開催年月日: 2018年11月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:その他  

  • 反応性プラズマとナノ粒子相互作用ゆらぎネットワーク解析

    古閑一憲

    第34回九州・山口プラズマ研究会  2018年11月 

     詳細を見る

    開催年月日: 2018年11月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:シーサイドホテル屋久島, 鹿児島   国名:日本国  

  • Synthesis of Hydrogenated Amorphous Carbon Nanoparticles using High-Pressure CH4+Ar Plasmas and Their Deposition 国際会議

    K. Koga, S. H. Hwang, K. Kamataki, N. Itagaki, T. Nakatani, M. Shiratani

    AVS 65th International Symposium & Exhibition  2018年10月 

     詳細を見る

    開催年月日: 2018年10月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:その他  

  • プラズマ中二体微粒子の衝突解析による相互作用揺らぎの研究

    古閑一憲, 大友洋, 周靭, 山下大輔, 鎌滝晋礼, 板垣奈穂, 白谷正治

    2018年第79回応用物理学会秋季学術講演会  2018年9月 

     詳細を見る

    開催年月日: 2018年9月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:名古屋国際会議場   国名:日本国  

  • Siネットワーク秩序性に対する製膜前駆体の効果

    古閑一憲, 田中和真, 原尚志, 石榴, 中野慎也, 山下大輔, 鎌滝晋礼, 板垣奈穂, 白谷正治

    2018年第79回応用物理学会秋季学術講演会  2018年9月 

     詳細を見る

    開催年月日: 2018年9月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:名古屋国際会議場   国名:日本国  

  • Effects of cluster deposition on spatial profile of Si-Hx bond density in a-Si:H films 国際会議

    K. Koga, K. Tanaka, H. Hara, S. Nagaishi, D. Yamashita, K. Kamataki, N. Itagaki, M. Shiratani

    2018 International Conference on Solid State Devices and Materials (SSDM2018)  2018年9月 

     詳細を見る

    開催年月日: 2018年9月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:日本国  

  • Challenge to precise control of chemical bond configuration in plasma CVD films 国際会議

    K. Koga, M. Shiratani

    RUB Japan Science Days 2018  2018年7月 

     詳細を見る

    開催年月日: 2018年7月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:ドイツ連邦共和国  

  • Control of synthesis and deposition of nanoparticles using a multi-hollow discharge plasma CVD 国際会議

    K. Koga, M. Shiratani

    Workshop "Plasma surface interaction for technological applications"  2018年6月 

     詳細を見る

    開催年月日: 2018年6月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:ドイツ連邦共和国  

  • High energy leverage method on growth enhancement of bio-mass plants using plasma seed treatment 国際会議

    K. Koga, Y. Wada, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani

    7th International Conference on Plasma Medicine (ICPM-7)  2018年6月 

     詳細を見る

    開催年月日: 2018年6月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:その他  

  • A deep insight of plasma-nanoparticle interaction 招待 国際会議

    K. Koga, K. Kamataki, N. Itagaki, M. Shiratani

    19th International Congress on Plasma Physics  2018年6月 

     詳細を見る

    開催年月日: 2018年6月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:カナダ  

  • 水素原子源付プラズマCVD法に任意電圧波形を併用したa-C:H薄膜の堆積

    古閑一憲, 山木健司, 方トウジュン, 山下大輔, 徐鉉雄, 板垣奈穂, 白谷正治

    第65回応用物理学会春季学術講演会  2018年3月 

     詳細を見る

    開催年月日: 2018年3月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:早稲田大学   国名:日本国  

  • 大気圧空気誘電体バリア放電プラズマを照射したカイワレ種子の電子スピン共鳴分光

    古閑一憲, 和田陽介, 佐藤僚哉, 山下大輔, 徐鉉雄, 板垣奈穂, 白谷正治

    第65回応用物理学会春季学術講演会  2018年3月 

     詳細を見る

    開催年月日: 2018年3月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:早稲田大学   国名:日本国  

  • 任意電圧波形を用いたC7H8+Ar+H2プラズマ生成

    古閑一憲, 山木健司, 方トウジュン, 山下大輔, 徐鉉雄, 板垣奈穂, 白谷正治

    平成30年電気学会全国大会  2018年3月 

     詳細を見る

    開催年月日: 2018年3月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:九州大学   国名:日本国  

  • Effects of RONS Dose on Plasma Induced Growth Enhancement of Radish Sprout 国際会議

    K. Koga, Y. Wada, R. Sato, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani

    2nd International Workshop On Plasma Agriculture (IWOPA2)  2018年3月 

     詳細を見る

    開催年月日: 2018年3月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:日本国  

  • Plasma Enhanced Carbon Recycling for Large-Scale Introduction of Solar Cells to Energy Supply Chain 招待 国際会議

    K. Koga, Y. Wada, R. Sato, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani

    5th Korea-Japan Joint Symposium on Advanced Solar Cells 2018, 2nd International Symposium on Energy Research and Application  2018年2月 

     詳細を見る

    開催年月日: 2018年2月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:大韓民国  

  • Towards ultra-high capacity batteries 国際会議

    K. Koga, G. Uchida, M. Shiratani

    Joint workshop btw SKKU and Kyushu University Emerging materials and devices  2018年1月 

     詳細を見る

    開催年月日: 2018年1月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:日本国  

  • A new insight into nanoparticle-plasma interactions (Invited) 招待 国際会議

    K. Koga, K. Mori, R. Zhou, H. Seo, N. Itagaki, M. Shiratani

    JP-KO dust workshop  2017年12月 

     詳細を見る

    開催年月日: 2017年12月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:大韓民国  

  • Evaluation of coupling among interaction fluctuations in nanoparticle growth in reactive plasmas 国際会議

    K. Koga, K. Mori, R. Zhou, H. Seo, N. Itagaki, M. Shiratani

    18th Workshop on Fine Particle Plasmas  2017年12月 

     詳細を見る

    開催年月日: 2017年12月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:日本国  

  • Deposition of High Quality Silicon Thin Films Utilizing Nanoparticles Trapped in Plasmas 国際会議

    K. Koga, T. Kojima, S. Toko, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani

    27th annual meeting of MRS-J  2017年12月 

     詳細を見る

    開催年月日: 2017年12月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:日本国  

  • Effects of Number Density of Seeds on Plasma Induced Plant Growth Enhancement 国際会議

    K. Koga, Y. Wada, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani

    27th annual meeting of MRS-J  2017年12月 

     詳細を見る

    開催年月日: 2017年12月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:日本国  

  • Effects of Gas Flow Velocity on Plant Growth of Radish Sprout 国際会議

    K. Koga, Y. Wada, R. Sato, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani

    The 2nd Asian Applied Physics Conference (Asian-APC)  2017年12月 

     詳細を見る

    開催年月日: 2017年12月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:日本国  

  • 植物種子へのプラズマ照射効果による成長促進とその機序(シンポジウム講演) 招待

    古閑一憲, 白谷正治

    2017年11月 

     詳細を見る

    開催年月日: 2017年11月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:姫路商工会議所   国名:日本国  

  • Development of a fine particle transport analyzer for processing plasmas 国際会議

    K. Koga, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani

    The 39th International Symposium on Dry Process (DPS 2017)  2017年11月 

     詳細を見る

    開催年月日: 2017年11月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:日本国  

  • 反応性プラズマを用いた物質機能の初期階層形成

    古閑一憲

    第33回九州・山口プラズマ研究会  2017年11月 

     詳細を見る

    開催年月日: 2017年11月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:長崎にっしょうかん   国名:日本国  

  • Surface-driven CH4 generation from CO2 in Low-pressure Non-thermal Plasma 国際会議

    K. Koga, S. Toko, S. Tanida, M. Shiratani

    American Vacuum Society 64th International Symposium and Exhibition (AVS64)  2017年10月 

     詳細を見る

    開催年月日: 2017年10月 - 2017年11月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:その他  

  • 火星上CO2のCH4資源化のための低温低圧プラズマ触媒プロセス

    古閑一憲, 都甲将, 谷田知史, 白谷正治, 細田聡史, 星野健

    第61回宇宙科学技術連合講演会  2017年10月 

     詳細を見る

    開催年月日: 2017年10月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:朱鷺メッセ, 新潟   国名:日本国  

  • スケーラブルDBDプラズマのRONS照射量に対する空気流れの効果

    古閑一憲, 和田陽介, 山下大輔, 徐鉉雄, 板垣奈穂, 白谷正治

    平成29年度(第70回)電気・情報関係学会九州支部連合大会  2017年9月 

     詳細を見る

    開催年月日: 2017年9月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:琉球大学   国名:日本国  

  • Hysteresis in Plasma CVD: a new path for high quality film deposition 招待 国際会議

    K. Koga, S. Toko, M. Shiratani

    11th Asian-European International Conference on Plasma Surface Engineering (AEPSE2017)  2017年9月 

     詳細を見る

    開催年月日: 2017年9月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:大韓民国  

  • プラズマ照射した種籾への催芽処理の効果

    古閑一憲, 和田陽介, 徐鉉雄, 板垣奈穂, 白谷正治, 橋本昌隆, 小島昌治

    第78回応用物理学会秋季学術講演会  2017年9月 

     詳細を見る

    開催年月日: 2017年9月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:福岡国際会議場, 福岡国際センター   国名:日本国  

  • Synthesis of Nanoparticles Using Low Temperature Plasmas and Its Application to Solar Cells and Tracers in Living Body (Invited) 招待 国際会議

    K. Koga, H. Seo, A. Tanaka, N. Itagaki, M. Shiratani

    231st Meeting of Electrochemical Society (ECS)  2017年5月 

     詳細を見る

    開催年月日: 2017年5月 - 2017年6月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:その他  

  • 低温プラズマによるナノ粒子の合成と太陽電池への応用

    古閑一憲, 徐鉉雄, 板垣奈穂, 白谷正治

    電子情報通信学会有機エレクトロニクス研究会  2017年4月 

     詳細を見る

    開催年月日: 2017年4月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:龍郷町生涯学習センター(鹿児島県奄美大島)   国名:日本国  

  • Corrational study of fluctuation of coupling between plasmas and nanoparticles 国際会議

    K. Koga, K. Mori, H. Seo, N. Itagaki, M. Shiratani

    9th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 10th International Conference on Plasma Nanotechnology and Science (ISPlasma2017/IC-PLANTS2017)  2017年3月 

     詳細を見る

    開催年月日: 2017年3月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:日本国  

  • Long-term evaluation of In nanoparticle transport in living body 国際会議

    K. Koga, A. Tanaka, M. Hirata, T. Amano, T. Sarinont, H. Seo, N. Itagaki, M. Shiratani

    9th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 10th International Conference on Plasma Nanotechnology and Science (ISPlasma2017/IC-PLANTS2017)  2017年3月 

     詳細を見る

    開催年月日: 2017年3月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:日本国  

  • Comparision of Gamma irradation and scalable DBD on the declorization of Dyes 国際会議

    K. Koga, P. Attri, T. Sarinont, H. Seo, N. Itagaki, M. Shiratani

    9th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 10th International Conference on Plasma Nanotechnology and Science (ISPlasma2017/IC-PLANTS2017)  2017年3月 

     詳細を見る

    開催年月日: 2017年3月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:日本国  

  • 九州大学における反応性プラズマ精密制御CVD法の紹介(招待講演) 招待

    古閑一憲

    第1回産学共同研究検討会  2017年1月 

     詳細を見る

    開催年月日: 2017年1月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:九州大学   国名:日本国  

  • Time evolution of cross-correlation between two fluctuations of couplings between plasmas and nanoparticles in amplitude modulated discharges 国際会議

    K. Koga, K. Mori, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani

    17th Workshop on Fine Particle Plasmas and JAPAN-KOREA Workshop on Dust Particles 2016  2016年12月 

     詳細を見る

    開催年月日: 2016年12月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:日本国  

  • Dependence of amount of plasma activated water on growth enhancement of radish sprout 国際会議

    K. Koga, T. Sarinont, R. Katayama, Y. Wada, H. Seo, N. Itagaki, M. Shiratani

    26th annual meeting of MRS-J  2016年12月 

     詳細を見る

    開催年月日: 2016年12月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:日本国  

  • Comparative study on death of cells irradiated by non-thermal plasma, X-ray, and UV 国際会議

    K. Koga, T. Amano, T. Sarinont, R. Katayama, Y. Wada, H. Seo, N. Itagaki, M. Shiratani, A. Tanaka, Y. Nakatsu, T. Kondo

    The 1st Asian Applied Physics Conference (Asian-APC)  2016年12月 

     詳細を見る

    開催年月日: 2016年12月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:日本国  

  • 小型ダスト飛跡分析装置を用いたミラー上ダスト堆積抑制の検討

    古閑一憲, 片山龍, 方韜鈞, 山下大輔, 徐鉉雄, 板垣奈穂, 白谷正治, 増崎貴, 芦川直子, 時谷政行, 西村清彦, 相良明男

    第33回プラズマ・核融合学会年会  2016年12月 

     詳細を見る

    開催年月日: 2016年11月 - 2016年12月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:東北大学   国名:日本国  

  • プラズマとナノ粒子の相互作用ゆらぎの2次元空間構造の時間発展

    古閑一憲, 森研人, 徐鉉雄, 板垣奈穂, 白谷正治

    第33回プラズマ・核融合学会年会  2016年11月 

     詳細を見る

    開催年月日: 2016年11月 - 2016年12月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:東北大学   国名:日本国  

  • プラズマCVDを用いた高効率低劣化Si薄膜太陽電池の作製(招待講演) 招待

    古閑一憲

    第33回プラズマ・核融合学会年会  2016年11月 

     詳細を見る

    開催年月日: 2016年11月 - 2016年12月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:東北大学   国名:日本国  

  • プラズマ計測・診断 -反応性プラズマ中微粒子を中心として- (招待講演) 招待

    古閑一憲

    第27回プラズマエレクトロニクス講習会  2016年11月 

     詳細を見る

    開催年月日: 2016年11月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:東京大学   国名:日本国  

  • Control of Plant Growth by RONS Produced Using Nonthermal Atmospheric Air Plasma 国際会議

    K. Koga, T. Sarinont, M. Shiratani

    American Vacuum Society 63rd International Symposium and Exhibition (AVS63)  2016年11月 

     詳細を見る

    開催年月日: 2016年11月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:その他  

  • Comparative study of non-thermal atmospheric pressure discharge plasmas for life science applications 国際会議

    K. Koga, R. Katayama, T. Sarinont, H. Seo, N. Itagaki, P. Attri, E. L. Quiros, .A. Tanaka, M. Shiratani

    69th Annual Gaseous Electronics Conference (GEC2016)  2016年10月 

     詳細を見る

    開催年月日: 2016年10月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:ドイツ連邦共和国  

  • 火星上でのロケット燃料生成を目的とした低温低圧放電プラズマによるサバティエ反応

    古閑一憲, 都甲将, 白谷正治

    第60回宇宙科学技術連合講演会  2016年9月 

     詳細を見る

    開催年月日: 2016年9月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:函館アリーナ   国名:日本国  

  • Time development of response of cells irradiated by non-thermal atmospheric air plasma 国際会議

    K. Koga, T. Amano, Y. Nakatsu, H. Seo, N. Itagaki, A. Tanaka, T. Kondo, M. Shiratani

    6th International Conference on Plasma Medicine (ICPM6)  2016年9月 

     詳細を見る

    開催年月日: 2016年9月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:その他  

  • Nitrite concentration of plants grown from seeds irradiated by air dielectric barrier discharge plasmas 国際会議

    K. Koga, T. Sarinont, P. Attri, M. Shiratani

    20th International Vacuum Congress (IVC-20)  2016年8月 

     詳細を見る

    開催年月日: 2016年8月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:大韓民国  

  • QCMを用いたLHD内ダスト堆積量のその場測定

    古閑一憲, 片山龍, 方韜鈞, 山下大輔, 徐鉉雄, 板垣奈穂, 白谷正治, 増崎貴, 芦川直子, 時谷政行, 西村清彦, 相良明男, LHD実験グループ

    第11回核融合エネルギー連合講演会  2016年7月 

     詳細を見る

    開催年月日: 2016年7月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:九州大学   国名:日本国  

  • プラズマ中微粒子を用いたプラズマポテンシャルゆらぎの評価

    古閑一憲, 添島雅大, 伊藤鉄平, 徐鉉雄, 板垣奈穂, 白谷正治

    日本物理学会第71回年次大会  2016年3月 

     詳細を見る

    開催年月日: 2016年3月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:東北学院大学   国名:日本国  

  • 「プラズマ材料科学の未来を語る」(低圧非平衡プラズマプロセス) (招待講演) 招待

    古閑一憲

    第125回研究会 APSPT9-SPSM28サテライトミーティング『プラズマ材料科学の未来を語る』  2016年2月 

     詳細を見る

    開催年月日: 2016年2月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:JR博多シティ会議室   国名:日本国  

  • 振幅変調反応性高周波放電中のナノ粒子量のバイスペクトル解析

    古閑一憲

    応用力学研究所共同研究報告会  2016年2月 

     詳細を見る

    開催年月日: 2016年2月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:九州大学応用力学研究所   国名:日本国  

  • 大気圧非平衡プラズマの基礎 (招待講演) 招待

    古閑一憲

    プラズマ・核融合学会第28回専門講習会「プラズマ医療の現状と展望」  2016年1月 

     詳細を見る

    開催年月日: 2016年1月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:九州大学   国名:日本国  

  • Potential fluctuation evaluation using binary collision of fine particles suspended in plasmas (Invited) 招待

    K. Koga and M. Shiratani

    2015年12月 

     詳細を見る

    開催年月日: 2015年12月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:日本国  

  • 液中プラズマを用いたAuとPtナノ粒子の簡易作製法

    古閑一憲, 天野孝昭, Thapanut Sarinont, 徐鉉雄, 板垣奈穂, 白谷正治, 中津可道, 平田美由紀, 田中昭代

    平成27年度応用物理学会九州支部学術講演会  2015年12月 

     詳細を見る

    開催年月日: 2015年12月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:琉球大学   国名:日本国  

  • プラズマ中のクーロン衝突微粒子間引力

    古閑一憲, 添島雅大, 伊東鉄平, 山下大輔, 徐鉉雄, 板垣奈穂, 白谷正治, 野口将之, 内田誠一

    第32回プラズマ・核融合学会 年会  2015年11月 

     詳細を見る

    開催年月日: 2015年11月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:名古屋大学   国名:日本国  

  • 新しいプラズマプロセス技術を用いた薄膜堆積

    古閑一憲, 田浪荘汰, 山下大輔, 徐鉉雄, 板垣奈穂, 白谷正治

    接合科学共同利用・共同研究拠点 大阪大学接合科学研究所 平成27年度 共同研究成果発表会  2015年11月 

     詳細を見る

    開催年月日: 2015年11月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:大阪大学接合科学研究所   国名:日本国  

  • Effects of Ion Energy on Chemical Bond Configuration in a-C:H Deposited using Ar + H2+ C7H8 Plasma CVD 国際会議

    K. Koga, X. Dong, K. Yamaki, D. Yamashita, H. Seo, N. Itagaki, M. Shiratani, K. Takenaka, Y. Setsuhara

    37th International Symposium on Dry Process (DPS2015)  2015年11月 

     詳細を見る

    開催年月日: 2015年11月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:日本国  

  • Interactions between spin trapping reagents and non-thermal air DBD plasmas 国際会議

    K. Koga, T. Amano, T. Sarinont, T. Kondo, S. Kitazaki, Y. Nakatsu, A. Tanaka, M. Shiratani

    37th International Symposium on Dry Process (DPS2015)  2015年11月 

     詳細を見る

    開催年月日: 2015年11月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:日本国  

  • プラズマ照射に対する生体応答の研究

    古閑一憲

    第31回 九州・山口プラズマ研究会  2015年11月 

     詳細を見る

    開催年月日: 2015年11月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:COCOLAND SPORTS&RESORT, 山口   国名:日本国  

  • Improving of Harvest Period and Crop Yield of Arabidopsis Thaliana L. using Nonthermal Atmospheric Air Plasma 国際会議

    K. Koga, T. Sarinont, T. Amano, H. Seo, N. Itagaki, M. Shiratani

    American Vacuum Society 62nd International Symposium and Exhibition (AVS)  2015年10月 

     詳細を見る

    開催年月日: 2015年10月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:その他  

  • Two Dimentional Visualization of Oxidation Effect of Scalable DBD Plasma Irradiation using KI-starch Solution 国際会議

    K. Koga, T. Amano, T. Sarinont, T. Kawasaki, G. Uchida, H. Seo, N. Itagaki, M. Shiratani, Y. Nakatsu, A. Tanaka

    American Vacuum Society 62nd International Symposium and Exhibition (AVS)  2015年10月 

     詳細を見る

    開催年月日: 2015年10月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:その他  

  • Simple Evaluation Method of Atmospheric Plasma Irradiation Dose using pH of Water 国際会議

    K. Koga, T. Sarinont, T. Amano, H. Seo, N. Itagaki, Y. Nakatsu, A. Tanaka, M. Shiratani

    ICRP9/GEC68/SPP33  2015年10月 

     詳細を見る

    開催年月日: 2015年10月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:その他  

  • In vivo kinetics of nanoparticles synthesized by plasma in water (Invited) 招待 国際会議

    K. Koga, T. Amano, M. Hirata, A. Tanaka, M. Shiratani

    The 21st Korea-Japan Workshop on Advanced Plasma Processes and Diagnostics & The Workshop for NU-SKKU Joint Institute for Plasma-Nano Materials  2015年10月 

     詳細を見る

    開催年月日: 2015年10月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:大韓民国  

  • In-situ laser Raman spectroscopy of an optically trapped fine particle 国際会議

    K. Koga, M. Soejima, K. Tomita, T. Ito, H. Seo, N. Itagaki, M. Shiratani

    17th International Symposium on Laser-Aided Plasma Diagnostics (LAPD17)  2015年9月 

     詳細を見る

    開催年月日: 2015年9月 - 2015年10月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:日本国  

  • Control Of Nanoprticle Transport And Their Deposition For Porous Low-k Films By Using Plasma Pertubation (Invited) 招待 国際会議

    K. Koga and M. Shiratani

    The 10th Asian-European International Conference on Plasma Surface Engineering (AEPSE2015)  2015年9月 

     詳細を見る

    開催年月日: 2015年9月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:大韓民国  

  • アルゴンプラズマ中微粒子運動の画像解析によるプラズマパラメータ評価

    古閑一憲, 添島雅大, 徐鉉雄, 板垣奈穂, 白谷正治, 内田誠一

    日本物理学会 2015年秋季大会  2015年9月 

     詳細を見る

    開催年月日: 2015年9月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:関西大学   国名:日本国  

  • 反応性プラズマ中ナノ粒子とラジカルの非線形結合成分の時空間解析

    古閑一憲, 伊東鉄平, 徐鉉雄, 板垣奈穂, 白谷正治

    日本物理学会 2015年秋季大会  2015年9月 

     詳細を見る

    開催年月日: 2015年9月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:関西大学   国名:日本国  

  • 大気圧非平衡プラズマ照射による液中ラジカル生成の相関解析(招待講演) 招待

    古閑一憲

    新学術領域研究 プラズマ・ナノマテリアル動態学の創成と安全安心医療科学の構築 第21回医工連携ゼミ  2015年4月 

     詳細を見る

    開催年月日: 2015年4月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:九州大学   国名:日本国  

  • 非平衡プラズマスパッタリングによる高速低温層交換結晶成長

    古閑一憲, 市田大樹, 山下大輔, 徐鉉雄, 板垣奈穂, 白谷正治

    日本物理学会第70回年次大会  2015年3月 

     詳細を見る

    開催年月日: 2015年3月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:早稲田大学   国名:日本国  

  • ラットに皮下投与したInナノ粒子の体内輸送

    古閑一憲, 天野孝昭, 平田美由紀, 田中昭代, 白谷正治

    第62回応用物理学会春季学術講演会  2015年3月 

     詳細を見る

    開催年月日: 2015年3月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:東海大学   国名:日本国  

  • 水素化アモルファスシリコン薄膜中Si-H2結合生成に対するクラスタ混入とラジカル表面反応の寄与

    古閑一憲, 都甲将, 鳥越祥宏, 毛屋公孝, 徐鉉雄, 板垣奈穂, 白谷 正治

    第62回応用物理学会春季学術講演会  2015年3月 

     詳細を見る

    開催年月日: 2015年3月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:東海大学   国名:日本国  

  • スパッタを用いた低温高速層交換Ge結晶成長に対する基板温度の効果

    古閑一憲, 市田大樹, 橋本慎史, 徐鉉雄, 山下大輔, 板垣奈穂, 白谷正治

    第62回応用物理学会春季学術講演会  2015年3月 

     詳細を見る

    開催年月日: 2015年3月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:東海大学   国名:日本国  

  • プロセシングプラズマを用いたIV族半導体ナノ粒子の作製と太陽電池への応用(招待講演) 招待

    古閑一憲, 内田儀一郎, 徐鉉雄, 白谷正治

    平成26年度 東北大学電気通信研究所共同プロジェクト研究会「プラズマナノバイオ・医療の基礎研究」  2015年2月 

     詳細を見る

    開催年月日: 2015年2月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:東北大学   国名:日本国  

  • Temporal development of nonlinear coupling between radicals and nanoparticles in reactive plasmas (Invited) 招待 国際会議

    K. Koga, T. Ito, H. Seo, N. Itagaki, and M. Shiratani

    The 75th IUVSTA Workshop on Sheath Phenomena in Plasma Processing of Advanced Materials  2015年1月 

     詳細を見る

    開催年月日: 2015年1月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:スロベニア共和国  

  • Cluster suppressed deposition of a-Si:H films by employing non-linear phenomena in reactive plasmas (Invited) 招待 国際会議

    K. Koga, S. Toko, Y. Torigoe, K. Keya, H. Seo, N. Itagaki, M. Shiratani

    2015 Japan-Korea Joint Symposium on Advanced Solar Cells  2015年1月 

     詳細を見る

    開催年月日: 2015年1月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:日本国  

  • 大気圧空気プラズマを照射したカイコの成長

    古閑一憲, サリノントタパナット, 天野孝昭, 白谷正治

    第24回日本MRS年次大会  2014年12月 

     詳細を見る

    開催年月日: 2014年12月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:横浜市開港記念会館   国名:日本国  

  • プラズマ技術の生体・環境分野への応用研究

    古閑一憲

    九州大学テクノロジーフォーラム2014  2014年12月 

     詳細を見る

    開催年月日: 2014年12月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:東京国際フォーラム   国名:日本国  

  • プラズマ照射によるシロイヌナズナの植物成長促進の世代間伝搬

    古閑一憲, サリノントタパナット, 北﨑訓, 林信哉, 白谷正治

    第30回 九州・山口プラズマ研究会  2014年11月 

     詳細を見る

    開催年月日: 2014年11月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:ラグナガーデンホテル、沖縄   国名:日本国  

  • Analysis of coupling between nanoparticles and radicals using perturbation of radical density in reactive plasmas 国際会議

    K. Koga, T. Ito, H. Seo, N. Itagaki, M. Shiratani

    Plasma Conference 2014  2014年11月 

     詳細を見る

    開催年月日: 2014年11月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:日本国  

  • Effects of amplitude modulated VHF discharge on coupling between plasmas and nanoparticles 国際会議

    K. Koga, T. Ito, K. Kamataki, H. Seo, N. Itagaki, and M. Shiratani

    24th International Toki Conference  2014年11月 

     詳細を見る

    開催年月日: 2014年11月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:日本国  

  • Spatiotemporal Analysis of Nanoparticle Growth in Amplitude Modulated Reactive Plasmas for Understanding Interactions between Plasmas and Nanomaterials (Invited) 招待 国際会議

    K. Koga, Y. Morita, T. Ito, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani

    15th IUMRS-International Conference in Asia  2014年8月 

     詳細を見る

    開催年月日: 2014年8月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:日本国  

  • 太陽電池開発の最前線

    古閑一憲

    2014年度先端サマーセミナー(第6回研究活動交流会)  2014年8月 

     詳細を見る

    開催年月日: 2014年8月

    記述言語:日本語   会議種別:口頭発表(一般)  

    開催地:九州大学   国名:日本国  

  • Quartz crystal microbalance measurements for in-situ evaluation of dust inventory in fusion devices 国際会議

    K. Koga, M. Tateishi, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, and the LHD Experimental Group

    26th Symposium on Plasma Physics and Technology  2014年6月 

     詳細を見る

    開催年月日: 2014年6月

    記述言語:英語   会議種別:口頭発表(一般)  

    国名:その他