Updated on 2024/07/28

Information

 

写真a

 
SADOH TAIZOH
 
Organization
Faculty of Information Science and Electrical Engineering Department of Electronics Associate Professor
School of Engineering Department of Electrical Engineering and Computer Science(Concurrent)
Graduate School of Information Science and Electrical Engineering Department of Electrical and Electronic Engineering(Concurrent)
Joint Graduate School of Mathematics for Innovation (Concurrent)
Title
Associate Professor
Contact information
メールアドレス
Profile
1.研究活動 (a)シリコン系材料の高機能化・新材料の探索  集積回路を構成する半導体デバイスの微細化・集積化が高度に進み、従来の開発手法では、集積回路の性能向上が困難となりつつあります。今後も高まるニーズに応えるためには、微細化のみに頼る従来手法に加え、材料自体の特性を飛躍的に向上することが必要です。このため、デバイス高速化に有効なSiGe、SiGeC、光通信デバイスとしての可能性のある直接遷移型FeSi2など、新シリコン系材料に注目し、材料の製作、および電子・光学特性の解明を行っています。 (b)照射誘起欠陥を利用したプロセス技術の確立  半導体結晶に荷電粒子を照射すると、空孔、格子間原子などの照射誘起欠陥が生成されます。これらの欠陥は、結晶中を移動して消滅したり、複合欠陥を形成して安定化します。その緩和過程で、照射誘起欠陥はある量のエネルギーを結晶を構成する原子に放出しますが、そのエネルギーを半導体加工のためのプロセスエネルギーとして利用すると、低温での固相結晶成長やシリサイド形成反応を誘起することが可能となります。照射誘起欠陥緩和の素過程の解明、照射誘起欠陥により誘起される非晶質化、結晶化、シリサイド形成反応の機構の解明、およびこれらの現象を利用してのデバイス構造形成を行っています。 (c)シリコン結晶中微小欠陥の挙動の解明  半導体材料には、結晶成長、デバイス加工などの工程で、プロセス誘起欠陥、重金属汚染など種々の微小欠陥が導入されます。半導体デバイスの微細化に伴い、これら微小欠陥がデバイスの動作特性に及ぼす影響が顕著になっています。シリコン結晶中の微小欠陥の評価に関する研究を行い、3d遷移金属不純物、水素関連複合欠陥、および粒子照射誘起欠陥の特性を系統的に解明しています。また、次世代の基板材料として期待されるSOI中微小欠陥の電気的特性評価評価手法を開発しています。 2.教育活動  マイクロデバイス物理特論(大学院システム情報科学府電子デバイス工学専攻、平成8年度より)、電子デバイス工学第二(工学部電気系学科、平成8,9年度)、基礎数学演習第一(工学部電気情報工学科、平成10年度)、電気電子工学(農学部農業工学科、平成8年度より)、一般電気工学第二(工学部地球環境工学科、平成12年度より)を担当。 3.社会活動  財団法人福岡県産業・科学技術振興財団福岡県地域結集型共同事業研究員(平成10年1〜3月)

Degree

  • D. Eng.

Research Interests・Research Keywords

  • Research theme:Study on low-temperature crystal growth processing for advanced flexible electronics

    Keyword:flexible electronics, Si, Ge, Sn

    Research period: 2005.4

  • Research theme:Study on silicon-germanium hetero-semiconductor technology for advanced LSI

    Keyword:LSI, semiconductor, Si, Ge, Sn

    Research period: 1999.4

  • Research theme:Study on silicon hetero-materials under non-equilibrium

    Keyword:semiconductor, Si, Ge, non-equilibrium process

    Research period: 1996.4 - 2005.3

  • Research theme:シリコン中の微小欠陥に関する研究

    Keyword:半導体、シリコン、ゲルマニウム、イオン、重金属、水素

    Research period: 1996.4 - 1999.3

Awards

  • The 2020 Reviewer of the Year for Applied Physics Express, Outstanding Reviewer Award

    2021.3   IOP Publishing  

     More details

    IOP Publishingの論文誌の編集に多大な貢献。

  • 2017年度APEX/JJAP編集貢献賞

    2018.3   応用物理学会   応用物理学会の論文誌(APEX/JJAP)の編集に多大な貢献。

     More details

    応用物理学会の論文誌(APEX/JJAP)の編集に多大な貢献。

  • 電気学会論文発表賞

    1994.1  

Papers

  • Improved carrier mobility of Sn-doped Ge thin films (≤20 nm) on insulator by interface-modulated solid-phase crystallization combined with surface passivation Reviewed International journal

    165   107692-1 - 107692-8   2023.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    極薄Ge薄膜の新しい成膜プロセスを創出するとともに、トランジスタを作製し、高い移動度を実現。高移動度チャネルを用いた次世代集積回路の実現を加速する重要な成果である。

    DOI: https://doi.org/10.1016/j.mssp.2023.107692

    Repository Public URL: https://hdl.handle.net/2324/7172263

  • Modulation of Schottky barrier at metal/Ge contacts by phosphoric acid coating and excimer laser annealing Reviewed International journal

    Keita Katayama, Hiroshi Ikenoue, Taizoh Sadoh

    Materials Science in Semiconductor Processing   160   107433-1 - 107433-7   2023.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1016/j.mssp.2023.107433

    Repository Public URL: https://hdl.handle.net/2324/7172264

  • High mobility of (111)-oriented large-domain (>100 μm) poly-InSb on glass by rapid-thermal crystallization of sputter-deposited films Reviewed International journal

    132 ( 14 )   145302-1 - 145302-6   2022.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    スパッタ法による堆積と急速熱処理法を用いたInSb薄膜の新しい結晶成長技術を創出し、絶縁膜上に極めて高いキャリア移動度を有するInSb薄膜を実現。高感度かつ低コストな薄膜磁気センサの実現を加速する重要な成果である。

    DOI: https://doi.org/10.1063/5.0105045

    Repository Public URL: https://hdl.handle.net/2324/7172265

  • Layer-exchange crystallization for low-temperature (∼450 °C) formation of n-type tensile-strained Ge on insulator Reviewed International journal

    117 ( 17 )   172102-1 - 172102-6   2020.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    V族元素を触媒として用いた新しい結晶成長技術を創出し、絶縁膜上におけるn型Ge結晶薄膜の低温形成を実現。次世代集積回路や高性能フレキシブル・エレクトロニクスの実現を加速する重要な成果である。

    DOI: 10.1063/5.0020489

    Repository Public URL: https://hdl.handle.net/2324/7172266

  • Enhanced mobility of Sn-doped Ge thin-films (≤50 nm) on insulator for fully depleted transistors by nucleation-controlled solid-phase crystallization Reviewed International journal

    115 ( 4 )   042101-1 - 042101-5   2019.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    低温固相成長法に界面変調法を重畳した新しい結晶成長技術を創出し、絶縁膜上における極薄GeSn結晶薄膜の高移動度化を実現。次世代集積回路や高性能フレキシブル・エレクトロニクスの実現を加速する重要な成果である。

    DOI: 10.1063/1.5096798

    Repository Public URL: https://hdl.handle.net/2324/7172262

  • Nucleation Controlled Metal-Induced Lateral Crystallization of Amorphous Si1-xGex with Whole Ge Fraction on Insulator Reviewed International journal

    T. Sadoh, K. Toko, H. Kanno, S. Masumori, M. Itakura, N. Kuwano, and M. Miyao

    Jap.J.Appl.Phys.   2008.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • High-Performance Poly-Ge Thin-Film Transistor with NiGe Schottky Source/Drain Reviewed International journal

    T. Sadoh, H. Kamizuru, A. Kenjo and M. Miyao

    Materials Science Forum   2007.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Low-Temperature Epitaxial Growth of [Fe3Si/SiGe]n (n=1-2) Multi-Layered Structures for Spintronics Application Reviewed International journal

    T. Sadoh, K. Ueda, Y. Ando, M. Kumano, K. Narumi, Y. Maeda, and M. Miyao

    ECS Transactions   2007.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Ge-Channel Thin-Film Transistor with Schottky Source / Drain Fabricated by Low-Temperature Processing Reviewed International journal

    T. Sadoh, H. Kamizuru, A. Kenjo, and M. Miyao

    Jpn. J. Appl. Phys.   2007.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Low-temperature formation (<500°C) of poly-Ge thin-film transistor with NiGe Schottky source/drain: Reviewed International journal

    2006.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Atomically controlled molecular beam epitaxy of ferromagnetic silicide Fe3Si on Ge Reviewed International journal

    T. Sadoh, M. Kumano, R. Kizuka, K. Ueda, A. Kenjo, and M. Miyao

    Appl. Phys. Lett.   2006.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Suppression of Floating-Body Effects in Poly-Si TFT by Schottky S/D Structure Reviewed International journal

    T. Sadoh, Y. Ohyama, A. Kenjo, K. Ikeda, Y. Yamashita, and M. Miyao

    Jpn. J. Appl. Phys.   2006.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Modulation of Schottky barrier at metal/Ge contacts by phosphoric acid coating and excimer laser annealing

    Katayama, K; Ikenoue, H; Sadoh, T

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   160   2023.6   ISSN:1369-8001 eISSN:1873-4081

     More details

    Publisher:Materials Science in Semiconductor Processing  

    Germanium is an attractive material for advanced devices such as high speed transistors and high efficiency optical devices. To realize the high performance operation, low resistive contacts to Ge are required. However, the Fermi level in Ge at metal/Ge contacts is often pinned near the valance band edge. This Fermi level pinning generates high Schottky barrier heights at metal/Ge contacts regardless the work function of the metals, which results in low resistive contacts to p-type Ge but high resistive contacts to n-type Ge. Thus, a technique for modulating the Schottky barrier heights at metal/Ge contacts is desired. For this purpose, effects of surface treatments of Ge using phosphoric acid coating and excimer laser annealing (LA) were investigated. After LA without phosphoric acid coating, the reverse current of the Al/n-type Ge contacts is increased by an order of magnitude. On the other hand, the reverse current is significantly increased by three orders of magnitude after LA with phosphoric acid coating. Here, the Schottky barrier heights are decreased from 0.56 to 0.50 eV and from 0.59 to 0.49 eV after LA for samples without and with phosphoric acid coating, respectively. These phenomena are attributed to formation of very thin GeOx surface layers and very shallow doped layers having very high P concentrations, respectively. This technique is useful for modulation of the Fermi level pinning for metal/Ge contacts with the low thermal budget.

    DOI: 10.1016/j.mssp.2023.107433

    Web of Science

    Scopus

  • Preface: Special issue on control of semiconductor interfaces (ISCSI-IX)

    Shiojima, K; Nakatsuka, O; Kita, K; Ohmi, SI; Sadoh, T

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   158   2023.5   ISSN:1369-8001 eISSN:1873-4081

     More details

    Publisher:Materials Science in Semiconductor Processing  

    DOI: 10.1016/j.mssp.2023.107386

    Web of Science

    Scopus

  • Excimer Laser Doping for PN Junction Formation with Extremely Low Thermal Budget

    Aoki R., Katayama K., Nakamura D., Ikenoue H., Sadoh T.

    30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings   159 - 160   2023   ISBN:9784991216947

     More details

    Publisher:30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings  

    To achieve high performance of advanced devices, a doping process with low thermal budget is required. For this purpose, excimer laser doping into Si is investigated. By using ultra-thin Al films deposited on n-type Si substrates as diffusion source, p-type regions are formed on the surfaces of the n-type Si substrates after laser irradiation. The electrical properties and surface morphologies of the samples are investigated as a function of the laser fluence. PN junctions showing good rectifying characteristics without surface roughening are obtained by optimization of the laser fluence. This technique will be useful to realize next-generation high-performance devices with low thermal budget.

    Scopus

  • Sn-Doped Si Thin-Films on Insulator by Solid-Phase Crystallization

    Hanafusa Y., Okamoto K., Sadoh T.

    30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings   157 - 158   2023   ISBN:9784991216947

     More details

    Publisher:30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings  

    Solid-phase crystallization of Sn-doped Si thin films (Sn concentration: 1%, thickness: ≤ 30 nm) on insulator has been investigated. After annealing of the Sn-doped Si thin films at temperatures below 600oC, domain structures were observed. The growth velocities of the domains decreased with decreasing film thickness. However, they are significantly higher compared with the reported values of the solid-phase epitaxy of Si. The crystal structures of the grown films also depended on the film thickness, and larger grain sizes are obtained for thicker films.

    Scopus

  • Improved Carrier Mobility of Sn-Doped Ge Thin-Films (≤20 nm) by Post-Annealing for Thin-Film Transistor Application

    Koga T., Nagano T., Moto K., Yamamoto K., Sadoh T.

    30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings   161 - 162   2023   ISBN:9784991216947

     More details

    Publisher:30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings  

    A technique to obtain high carrier mobility of Sn-doped Ge thin-films (thickness: ≤20 nm) on insulators is proposed. In a conventional approach, the grain sizes of Sn-doped poly-Ge films grown by solid-phase crystallization decrease with decreasing thickness. This significantly deteriorates the carrier mobility. To solve this problem, thinning of thick Ge films having large grain sizes is investigated. Moreover, to eliminate the crystal defects, post-Annealing is examined. This achieves high carrier mobility (~200 cm2/Vs) even for thin-films (thickness: 20 nm). A good transistor operation is demonstrated using the thinned Ge films. This technique will be useful to realize advanced thin-film transistors for next-generation electronics.

    Scopus

  • High mobility of (111)-oriented large-domain (&gt;100 μm) poly-InSb on glass by rapid-thermal crystallization of sputter-deposited films

    Kajiwara, T; Shimoda, O; Okada, T; Koswaththage, CJ; Noguchi, T; Sadoh, T

    JOURNAL OF APPLIED PHYSICS   132 ( 14 )   2022.10   ISSN:0021-8979 eISSN:1089-7550

     More details

    Publisher:Journal of Applied Physics  

    Rapid-thermal annealing (RTA) of InSb precursor films, deposited by sputtering using an Ar plasma at room temperature, has been investigated to achieve high carrier mobility on low-cost glass substrates. Although InSb films containing residual Ar (∼1%) were partially lost by evaporation during RTA, such evaporation during RTA is suppressed by reducing the residual Ar to ∼0.3%. The crystallinity of the films is significantly increased by RTA at temperatures above 400 °C. The electron mobilities of the films increase with increasing RTA temperature up to 490 °C, showing the maximum values (9000-10 000 cm2 V-1 s-1) at 490 °C, and then, the mobilities decrease at RTA temperatures above 490 °C. The mobilities of 9000-10 000 cm2 V-1 s-1 are obtained for films with a wide range of thickness (300-1000 nm) grown at 490 °C. Detailed analysis indicated that the high carrier mobilities are realized by preferentially (111)-oriented large crystal domains (diameter: >100 μm), obtained by the regrowth of randomly oriented small grains, together with a low barrier height (16 meV) at the sub-domain boundaries (twin boundaries) in the large domains. The RTA after the sputtering technique will facilitate high-performance InSb-based devices with low production costs.

    DOI: 10.1063/5.0105045

    Web of Science

    Scopus

  • High mobility of (111)-oriented large-domain (>100 μm) poly-InSb on glass by rapid-thermal crystallization of sputter-deposited films

    Kajiwara Takashi, Shimoda Otokichi, Okada Tatsuya, Charith Jayanada Koswaththage, Noguchi Takashi, Sadoh Taizoh

    Journal of Applied Physics   132   145302   2022.10   ISSN:00218979 eISSN:10897550

     More details

    Language:English  

    Rapid-thermal annealing (RTA) of InSb precursor films, deposited by sputtering using an Ar plasma at room temperature, has been investigated to achieve high carrier mobility on low-cost glass substrates. Although InSb films containing residual Ar (∼1%) were partially lost by evaporation during RTA, such evaporation during RTA is suppressed by reducing the residual Ar to ∼0.3%. The crystallinity of the films is significantly increased by RTA at temperatures above 400 °C. The electron mobilities of the films increase with increasing RTA temperature up to 490 °C, showing the maximum values (9000–10 000 cm^2 V^<−1> s^<−1>) at 490 °C, and then, the mobilities decrease at RTA temperatures above 490 °C. The mobilities of 9000–10 000 cm^2 V^<−1> s^<−1> are obtained for films with a wide range of thickness (300–1000 nm) grown at 490 °C. Detailed analysis indicated that the high carrier mobilities are realized by preferentially (111)-oriented large crystal domains (diameter: >100 μm), obtained by the regrowth of randomly oriented small grains, together with a low barrier height (16 meV) at the sub-domain boundaries (twin boundaries) in the large domains. The RTA after the sputtering technique will facilitate high-performance InSb-based devices with low production costs.

    CiNii Research

  • Interface-Modulated Solid-Phase Crystallization of Sn-Doped Ge Ultrathin-Films for Advanced TFT

    Sadoh T., Nagano T., Koga T., Moto K., Yamamoto K.

    Proceedings of the International Display Workshops   29   165 - 167   2022   ISSN:18832490

     More details

    Publisher:Proceedings of the International Display Workshops  

    High-speed fully-depleted thin-film transistors (TFTs) are required for next-generation electronics, such as three-dimensional large-scale integrated circuits and advanced system-in-displays. For this purpose, a novel growth technique, i.e., interface-modulated solid-phase crystallization, of Sn-doped Ge has been developed. This achieves high carrier mobility (~100 cm2/Vs) of ultrathin films (20 nm) on insulators.

    Scopus

  • Solid-Phase Crystallization Characteristics of Interface-Modulated So-Doped Ge Thin Films on Insulator with Capping

    Nagano, T; Hara, R; Sadoh, T

    TWENTY-NINETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES: TFT TECHNOLOGIES AND FPD MATERIALS (AM-FPD 22)   114 - 115   2022   ISBN:978-4-9912169-2-3

     More details

  • Solid-Phase Crystallization Characteristics of Interface-Modulated Sn- Doped Ge Thin Films on Insulator with Capping

    Nagano T., Hara R., Sadoh T.

    Proceedings of AM-FPD 2022 - 29th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials   114 - 115   2022   ISBN:9784991216923

     More details

    Publisher:Proceedings of AM-FPD 2022 - 29th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials  

    Thin poly-Ge films (thickness: ≤ 50 nm) having high carrier mobility are required for advanced thin-film devices. However, carrier mobility of poly-Ge films obtained by conventional solid-phase crystallization (SPC) significantly decreases with decreasing thickness below 50 nm. To solve this problem, we develop an interface-modulated SPC of Sn-doped Ge combined with a-Si capping. In the present study, we investigate growth characteristics of a-Si capped Sn-doped Ge films on insulator. It is clarified that a-Si capping enhances SPC of Sn-doped Ge films and results in large crystal grains, which improves the carrier mobility of Sn-doped Ge thin films. This technique will be useful to realize advanced thin-film devices for next-generation electronics.

    DOI: 10.23919/AM-FPD54920.2022.9851292

    Scopus

  • Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating Reviewed International journal

    @Kaname IMOKAWA, #Takayuki KURASHIGE, @Akira SUWA, @Daisuke NAKAMURA, @Taizoh SADOH, @Tetsuya GOTO, @Hiroshi IKENOUE

    IEEE Journal of the Electron Devices Society   8   27 - 32   2020.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1109/JEDS.2019.2956991

    Other Link: https://doi.org/10.1109/JEDS.2019.2956991

  • Low-Temperature (∼250°C) Gold-Induced Lateral Growth of Sn-Doped Ge on Insulator Enhanced by Layer-Exchange Reaction Reviewed International journal

    8 ( 10 )   P609 - P614   2019.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: http://dx.doi.org/10.1149/2.0281910jss

  • Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation

    Xiangsheng Gong, Chang Xu, Taizoh Sadoh

    26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019 AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices TFT Technologies and FPD Materials, Proceedings   2019.7

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.23919/AM-FPD.2019.8830601

  • High mobility sputtered InSb film by blue laser diode annealing Reviewed International journal

    C. J. Koswaththage, T. Higashizako, T. Okada, T. Sadoh, M. Furuta, B. S. Bae, and T. Noguchi

    AIP Advances   9   045009-1 - 045009-5   2019.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1063/1.5087235

  • Low temperature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication

    Kaname Imokawa, Nozomu Tanaka, Akira Suwa, Daisuke Nakamura, Taizoh Sadoh, Tetsuya Goto, Hiroshi Ikenoue

    Laser-Based Micro- and Nanoprocessing XIII 2019 Laser-Based Micro- and Nanoprocessing XIII   2019.1

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1117/12.2509141

  • Low-temperature (∼250°C) gold-induced lateral growth of Sn-doped Ge on insulator enhanced by layer-exchange reaction Reviewed

    8 ( 10 )   P609 - P614   2019

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Low-temperature (≤250°C) formation of Sn-doped Ge (GeSn) (substitutional Sn concentration: 2-3%) on insulator is desired to realize flexible electronics, where high-speed thin-film transistors are integrated on flexible plastic-substrates (softening temperature: ∼300°C). To achieve this, gold-induced lateral crystallization of amorphous GeSn (a-GeSn) is investigated. Here, a-GeSn (Sn concentration: 0%-20%) on insulator structures, having Au-island patterns, were annealed. For initial Sn concentrations of 0%-5%, high-speed lateral crystallization proceeds around Au-patterns, and large grown regions (∼5-20 μm) are obtained by low-temperature short-time annealing (150°C-250°C, 10 min). However, bottom regions of GeSn are not crystallized at 150°C-200°C, while the whole films including bottom regions are crystallized at 250°C. These phenomena are caused by the following temperature-dependent growth mechanisms. At 150°C-200°C, Au atoms are supplied into surface-regions of a-GeSn films from Au-islands by surface-diffusion, resulting in crystallization of only surface-regions. On the other hand, at 250°C, layer-exchange of Au/GeSn occurs, which increases supply channel of Au for diffusion. This results in complete crystallization of GeSn to the bottom. Substitutional Sn concentrations in grown layers are increased with increasing annealing temperature. As a result, GeSn films (substitutional Sn concentration: ∼3%) are obtained at ∼250°C.

    DOI: 10.1149/2.0281910jss

  • Low-Temperature Formation of Ohmic Contact for Si TFT Fabrication by Excimer Laser Doping with Phosphoric Acid Coating (シリコン材料・デバイス) Reviewed

    118 ( 241 )   11 - 14   2018.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Characterization of Excimer-Laser Doping of a Poly-Si Thin Film with a Phosphoric-Acid Coating for Thin-Film-Transistor Fabrication

    Kaname Imokawa, Nozomu Tanaka, Akira Suwa, Daisuke Nakamura, Taizoh Sadoh, Tetsuya Goto, Hiroshi Ikenoue

    25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018 AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices TFT Technologies and FPD Materials, Proceedings   2018.8

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.23919/AM-FPD.2018.8437343

  • Retraction Nucleation-controlled low-temperature solid-phase crystallization for Sn-doped polycrystalline-Ge film on insulator with high carrier mobility (∼550 cm2/V s) (Applied Physics Letters (2018) 112 (242103) DOI: 10.1063/1.5024307) Reviewed

    113 ( 2 )   2018.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    The authors wish to retract their publication.1 This action is taken because an error in film thicknesses used in determining the mobilities reported in the manuscript resulted in mobility overestimates by factors of two, three, and four for the films with thicknesses of 100, 150, and 200 nm, respectively. Since the high value of the mobility was the central result of the manuscript and drove much of the discussion, the authors are retracting the publication. The authors sincerely apologize for any inconvenience this mistake may have caused.

    DOI: 10.1063/1.5046407

  • Nucleation-controlled low-temperature solid-phase crystallization for Sn-doped polycrystalline-Ge film on insulator with high carrier mobility (∼550 cm2/V s) Reviewed

    112 ( 24 )   2018.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    High-speed thin-film transistors (TFTs) are required to develop the next generation of electronics, such as three-dimensional large-scale integrated circuits and advanced system-in-displays. For this purpose, high-carrier-mobility semiconductor films on insulator structures should be fabricated with low-temperature processing conditions (≤500 °C). To achieve this, we investigate solid-phase crystallization of amorphous-GeSn (a-GeSn) films (Sn concentration: 2% and thickness: 50-200 nm) on insulating substrates, where thin a-Si under-layers (thickness: 0-20 nm) are introduced between a-GeSn films and insulating substrates. The GeSn films are polycrystallized by annealing (450 °C, 20 h) for all samples irrespective of a-GeSn and a-Si thickness conditions, while the Si films remain amorphous. Analysis of crystal structures of GeSn films (thickness: 50 nm) reveals that grain sizes decrease from ∼10 μm to 2-3 μm by the introduction of a-Si under-layers (thickness: 3-20 nm). This phenomenon is attributed to the change in dominant nucleation sites from the interface to the bulk, which significantly decreases grain-boundary scattering of carriers through a decrease in the barrier heights at grain boundaries. Bulk-nucleation further becomes dominant by increasing the GeSn film thickness. As a result, a high carrier mobility of ∼550 cm2/V s is realized for GeSn films (thickness: 100 nm) grown with a-Si under-layers. This mobility is the largest among ever reported data for Ge and GeSn grown on an insulator. This technique will facilitate realization of high-speed TFTs for use in the next generation of electronics.

    DOI: 10.1063/1.5024307

  • Large single-crystal Ge-on-insulator by thermally-assisted (~400°C) Si-seeded-pulse-laser annealing Reviewed International journal

    70   8 - 11   2017.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Low-Temperature formation of n-Type Ge/Insulator by Sb-Induced layer exchange crystallization

    Hongmiao Gao, Rikuta Aoki, Masaya Sasaki, Masanobu Miyao, Taizoh Sadoh

    24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017 AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices TFT Technologies and FPD Materials, Proceedings   239 - 240   2017.8

     More details

    Language:English   Publishing type:Research paper (other academic)  

  • Thickness-dependent substitutional-Sn-Concentration in GeSn-on-Insulator by weak-laser-irradiation-enhanced solid-phase crystallization at low-Temperature (180°C)

    241 - 243   2017.8

     More details

    Language:English   Publishing type:Research paper (other academic)  

    Effects of film-Thickness on substitutional Sn concentration in GeSn films on insulator grown by combination of laser irradiation and subsequent thermal annealing are investigated. Here, the laser fluence is chosen as weak, which is below the critical fluence for crystallization of GeSn. It is clarified that for samples irradiated with low fluence, complete crystallization of a-Ge0.8Sn0.2 films (thickness: 50200 nm) is achieved by subsequent thermal annealing at 180°C for 5 h without incubation time. The substitutional Sn concentrations increase with decreasing film thickness. As a result, very high substitutional Sn concentration of ∼15%, which corresponds to high-substitution fraction of ∼75% of total Sn atoms, is achieved for film thickness of 50 nm. This technique will be useful to realize next-generation high performance devices on flexible insulating substrates.

  • Low-temperature (<200⸰C) solid-phase crystallization of high substitutional Sn concentration (~10%) GeSn on insulator enhanced by weak laser irradiation Reviewed International journal

    7 ( 7 )   075204-1 - 075204-6   2017.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Formation of n-type Ge on insulator by low-temperature Sb-induced layer exchange crystallization

    Hongmiao Gao, Rikuta Aoki, Masaya Sasaki, Masanobu Miyao, Taizoh Sadoh

    17th International Workshop on Junction Technology, IWJT 2017 17th International Workshop on Junction Technology, IWJT 2017   21 - 22   2017.6

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.23919/IWJT.2017.7966503

  • Weak-laser-irradiation-enhanced solid-phase crystallization of GeSn-on-insulator at low-temperature (180°C) - Thickness-dependent high substitutional-Sn-concentration

    19 - 20   2017.6

     More details

    Language:English   Publishing type:Research paper (other academic)  

    Low-temperature (≤200°C) formation of GeSn (substitutional Sn concentration: >8%) films on insulator is desired to realize high-speed thin film transistors (TFTs) and high-efficiency optical devices on flexible plastic substrates (softening temperature: ∼200°C). This is because GeSn (substitutional Sn concentration: >8%) has higher carrier mobility than Si and Ge due to the direct-transition energy band structure with smaller effective mass of carriers.

    DOI: 10.23919/IWJT.2017.7966502

  • Novel growth techniques of group-IV based semiconductors on insulator for next-generation electronics

    Japanese Journal of Applied Physics   56 ( 5 )   05DA06-1 - 05DA06-14   2017.4

     More details

    Language:English  

  • Characterization of Si thin films doped by wet-chemical laser processing Reviewed

    Akira Suwa, Nozomu Tanaka, Taizoh Sadoh, Daisuke Nakamura, Hiroshi Ikenoue

    SID Symposium, Seminar, and Exhibition 2017, Display Week 2017 Digest of Technical Papers - SID International Symposium   48 ( 1 )   430 - 432   2017.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/sdtp.11659

  • High carrier mobility of Sn-doped polycrystalline-Ge films on insulators by thickness-dependent low-temperature solid-phase crystallization Reviewed International journal

    Applied Physics Letters   109 ( 23 )   232106-1 - 232106-5   2016.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4971825

  • High carrier mobility of Sn-doped polycrystalline-Ge films on insulators by thickness-dependent low-temperature solid-phase crystallization Reviewed

    Taizoh Sadoh, Yuki Kai, Ryo Matsumura, Kenta Moto, Masanobu Miyao

    Applied Physics Letters   109 ( 23 )   2016.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4971825

  • Cooling Rate Dependent High Substitutional Sn Concentration (>10%) in GeSn Crystals on Insulator by Pulsed Laser-Annealing

    ECS Transactions   75 ( 10 )   109 - 113   2016.10

     More details

    Language:English  

  • Low-Temperature Formation of Sn-Doped Ge on Insulating Substrates by Metal-Induced Crystallization

    ECS Transactions   75 ( 10 )   105 - 108   2016.10

     More details

    Language:English  

  • Low-Temperature Growth of Orientation-Controlled Large-Grain Ge-Rich SiGe on Insulator at Controlled-Position for Flexible Electronics

    ECS Transactions   75 ( 10 )   95 - 103   2016.10

     More details

    Language:English  

  • Formation of large-grain crystalline germanium on single layer graphene on insulator by rapid melting growth Reviewed

    Tahsin Morshed, Yuki Kai, Ryo Matsumura, Jong Hyeok Park, Hironori Chikita, Taizoh Sadoh, Abdul Manaf Hashim

    Materials Letters   178   147 - 150   2016.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.matlet.2016.05.007

  • Large-grain Sn-doped Ge (100) on insulator by aluminum-induced crystallization at low-temperature for flexible electronics

    Masaya Sasaki, Masanobu Miyao, Taizoh Sadoh

    23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016 Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices TFT Technologies and FPD Materials   191 - 193   2016.8

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1109/AM-FPD.2016.7543662

  • Pulse number controlled laser annealing for GeSn on insulator structure with high substitutional Sn concentration Reviewed International journal

    Applied Physics Letters   108 ( 26 )   262105-1 - 262105-5   2016.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: dx.doi.org/10.1063/1.4955059

  • Formation of germanium (111) on graphene on insulator by rapid melting growth for novel germanium-on-insulator structure Reviewed

    Tahsin Morshed, Yuki Kai, Ryo Matsumura, Jong Hyeok Park, Hironori Chikita, Taizoh Sadoh, Abdul Manaf Hashim

    Materials Letters   168   223 - 227   2016.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.matlet.2016.01.056

  • Low-temperature (<300 °C) formation of orientation-controlled large-grain (>10 μm) Ge-rich SiGe on insulator by gold-induced crystallization

    Taizoh SADOH, J.-H. Park, R. Aoki, Masanobu Miyao

    602   3 - 6   2016.3

     More details

    Language:English  

    DOI: dx.doi.org/10.1016/j.tsf.2015.10.057

  • Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics Reviewed

    Taizoh Sadoh, Jong Hyeok Park, Rikuta Aoki, Masanobu Miyao

    Japanese Journal of Applied Physics   55 ( 3 )   2016.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.55.03CB01

  • Low-temperature (≤ 300 °c) formation of orientation-controlled large-grain (≥ 10 μm) Ge-rich SiGe on insulator by gold-induced crystallization Reviewed

    602   3 - 6   2016.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Low-temperature (≤ 300 °C) formation of orientation-controlled large-grain (≥ 10 μm) Ge-rich (≥ 50%) SiGe crystals on insulator are realized by the gold-induced layer-exchange technique. Stacked structures of a-Si1 - xGex (0 ≤ x ≤ 1)/Au/SiO2 are employed as starting materials. Here, thin-Al2O3 layers are introduced as diffusion barrier at a-SiGe/Au interfaces to suppress random bulk-nucleation and make (111)-oriented interface-nucleation on SiO2 dominant. For samples with Ge fraction of 80%-100%, (111)-oriented large-grains (≥ 10 μm) are obtained through layer-exchange during annealing at 250 °C. On the other hand, layer-exchange for Ge fraction of 50% does not proceed at 250 °C. This phenomenon is attributed to retardation of lateral growth by introduction of Si. To enhance lateral growth, increase of annealing temperature is examined. As a result, (111)-oriented large-grains (≥ 10 μm) are realized for SiGe with Ge fraction of 50%-100%, having uniform composition profiles, by annealing at 300 °C. This technique is very useful to realize high-performance flexible electronics, employing plastic substrates (softening temperature: ∼350 °C).

    DOI: 10.1016/j.tsf.2015.10.057

  • High Sn-concentration (~ 8%) GeSn by low-temperature (~ 150 °c) solid-phase epitaxy of a-GeSn/c-Ge Reviewed

    602   20 - 23   2016.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    GeSn with a high substitutional Sn concentration (> 7%) is an attractive direct band gap material for high-efficiency photodevices that can be merged with large-scale integrated circuits (LSIs). To achieve GeSn with high Sn concentration, low-temperature solid-phase epitaxy using amorphous-GeSn (a-GeSn) (Sn concentration: 10%-36%)/crystal-Ge (c-Ge) stacked structures was investigated. Solid-phase growth of GeSn was enhanced as Sn concentration was increased, which enabled epitaxial growth at very low temperature (150-200 °C). Interestingly, concentrations of substitutional Sn increased with decreasing growth temperature. As a result, epitaxial growth of GeSn with substitutional Sn concentrations of ~ 8% was achieved by decreasing the growth temperature to 150 °C using a-GeSn (Sn concentration: 36%)/c-Ge stacked structures. This technique is expected to be useful to realize multi-function LSIs, where high-efficiency photodevices are integrated with transistors.

    DOI: 10.1016/j.tsf.2015.09.069

  • High Sn-concentration (similar to 8%) GeSn by low-temperature (similar to 150 degrees C) solid-phase epitaxy of a-GeSn/c-Ge

    THIN SOLID FILMS   602   20 - 23   2016.3

     More details

    Language:English  

    DOI: 10.1016/j.tsf.2015.09.069

  • Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics

    Japanese Journal of Applied Physics   55 ( 03 )   03CB01-1 - 03CB01-4   2016.1

     More details

    Language:English  

  • Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics Reviewed

    Taizoh Sadoh, Jong-Hyeok Park, Rikuta Aoki, Masanobu Miyao

    Japanese Journal of Applied Physics, Part 2: Letters   55 ( 3 )   03CB01 - 03CB01   2016.1

     More details

    Language:Others   Publishing type:Research paper (scientific journal)  

  • Low-temperature growth of orientation-controlled large-grain Ge-rich SiGe on insulator at controlled-position for flexible electronics

    Taizoh Sadoh, R. Aoki, T. Tanaka, J. H. Park, M. Miyao

    Symposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting Thin Film Transistors 13, TFT 13   75   95 - 103   2016.1

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1149/07510.0095ecst

  • Low-temperature formation of large-grain (10 m) ge at controlled-position on insulator by gold-induced crystallization combined with diffusion-barrier patterning Reviewed

    Rikuta Aoki, Jong Hyeok Park, Masanobu Miyao, Taizoh Sadoh

    ECS Journal of Solid State Science and Technology   5 ( 3 )   P179 - P182   2016.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/2.0161603jss

  • Low-Temperature Formation of Large-Grain (≥10 μm) Ge at Controlled-Position on Insulator by Gold-Induced Crystallization Combined with Diffusion-Barrier Patterning

    Rikuta Aoki, J.-H. Park, Masanobu Miyao, Taizoh SADOH

    5 ( 3 )   P179 - P182   2016.1

     More details

    Language:English  

  • Cooling rate dependent high substitutional Sn concentration (>10%) in GeSn crystals on insulator by pulsed laser-annealing

    K. Moto, R. Matsumura, Taizoh Sadoh, Hiroshi Ikenoue, M. Miyao

    Symposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting Thin Film Transistors 13, TFT 13   75   109 - 113   2016

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1149/07510.0109ecst

  • Low-temperature formation of Sn-doped Ge on insulating substrates by metal-induced crystallization

    T. Sakai, R. Matsumura, T. Sadoh, M. Miyao

    Symposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting Thin Film Transistors 13, TFT 13   105 - 108   2016

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1149/07510.0105ecst

  • Seeding Effects of Sn/a-Ge Island Structures for Low-Temperature Lateral-Growth of a-GeSn on Insulator

    ECS Journal of Solid State Science and Technology   5 ( 2 )   P76 - P79   2015.12

     More details

    Language:English  

  • Low-temperature (∼180°C) position-controlled lateral solid-phase crystallization of GeSn with laser-anneal seeding Reviewed

    107 ( 26 )   2015.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    To realize next-generation flexible thin-film devices, solid-phase crystallization (SPC) of amorphous germanium tin (GeSn) films on insulating substrates combined with seeds formed by laser annealing (LA) has been investigated. This technique enables the crystallization of GeSn at controlled positions at low temperature (∼180°C) due to the determination of the starting points of crystallization by LA seeding and Sn-induced SPC enhancement. The GeSn crystals grown by SPC from LA seeds showed abnormal lateral profiles of substitutional Sn concentration. These lateral profiles are caused by the annealing time after crystallization being a function of distance from the LA seeds. This observation of a post-annealing effect also indicates that GeSn with a substitutional Sn concentration of up to ∼10% possesses high thermal stability. These results will facilitate the fabrication of next-generation thin-film devices on flexible plastic substrates with low softening temperatures (∼250°C).

    DOI: 10.1063/1.4939109

  • Low-temperature (~180 ℃) position-controlled lateral solid-phase crystallization of GeSn with laser-anneal seeding

    Matsumura, Ryo, Chikita, Hironori, Kai Yuki, Taizoh SADOH, Hiroshi Ikenoue, Masanobu Miyao

    107 ( 26 )   262106-1 - 262106-5   2015.12

     More details

    Language:English  

    レーザアニール法によるSn溶融シード形成技術とGeSn固相成長技術を融合し、絶縁膜上における大面積GeSn結晶の低温成長を実現。次世代フレキシブル・エレクトロニクスの実現を加速する重要な成果である。

  • Ultra-low temperature (<= 300 degrees C) growth of Ge-rich SiGe by solid-liquid-coexisting annealing of a-GeSn/c-Si structures

    JOURNAL OF APPLIED PHYSICS   118 ( 9 )   067112-1 - 067112-7   2015.9

     More details

    Language:English  

    DOI: 10.1063/1.4929878

  • Thickness Dependent Solid-Phase Crystallization of Amorphous GeSn on Insulating Substrates at Low Temperatures (≤250◦C)

    Matsumura, Ryo, Masaya Sasaki, Chikita, Hironori, Taizoh SADOH, Masanobu Miyao

    4 ( 12 )   P95 - P97   2015.9

     More details

    Language:English  

  • Ultra-low temperature (≤300 °C) growth of Ge-rich SiGe by solid-liquid-coexisting annealing of a-GeSn/c-Si structures Reviewed

    118 ( 9 )   2015.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Ultra-low temperature (≤300 °C) growth of Ge-rich SiGe on Si substrates is strongly desired to realize advanced electronic and optical devices, which can be merged onto Si large-scale integrated circuits (LSI). To achieve this, annealing characteristics of a-GeSn/c-Si structures are investigated under wide ranges of the initial Sn concentrations (0%-26%) and annealing conditions (300-1000 °C, 1 s-48 h). Epitaxial growth triggered by SiGe mixing is observed after annealing, where the annealing temperatures necessary for epitaxial growth significantly decrease with increasing initial Sn concentration and/or annealing time. As a result, Ge-rich (∼80%) SiGe layers with Sn concentrations of ∼2% are realized by ultra-low temperature annealing (300 °C, 48 h) for a sample with the initial Sn concentration of 26%. The annealing temperature (300 °C) is in the solid-liquid coexisting temperature region of the phase diagram for Ge-Sn system. From detailed analysis of crystallization characteristics and composition profiles in grown layers, it is suggested that SiGe mixing is generated by a liquid-phase reaction even at ultra-low temperatures far below the melting temperature of a-GeSn. This ultra-low-temperature growth technique of Ge-rich SiGe on Si substrates is expected to be useful to realize next-generation LSI, where various multi-functional devices are integrated on Si substrates.

    DOI: 10.1063/1.4929878

  • Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics

    Taizoh Sadoh, Jong Hyeok Park, Rikuta Aoki, Masanobu Miyao

    22nd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2015 Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices TFT Technologies and FPD Materials   143 - 146   2015.7

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1109/AM-FPD.2015.7173225

  • High quality, giant crystalline-Ge stripes on insulating substrate by rapid-thermal-annealing of Sn-doped amorphous-Ge in solid-liquid coexisting region

    AIP Advances   5 ( 6 )   067112-1 - 067112-7   2015.6

     More details

    Language:English  

  • High quality, giant crystalline-Ge stripes on insulating substrate by rapid-thermal-annealing of Sn-doped amorphous-Ge in solid-liquid coexisting region Reviewed

    Ryo Matsumura, Yuki Kai, Hironori Chikita, Taizoh Sadoh, Masanobu Miyao

    AIP Advances   5 ( 6 )   2015.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4922266

  • Gold-induced low-temperature (≤300°C) growth of quasi-single crystal SiGe on insulator for advanced flexible electronics

    21 - 27   2015.1

     More details

    Language:English   Publishing type:Research paper (other academic)  

    A low-temperature (≤300°C) growth technique of quasi-single crystal, i.e., orientation-controlled large-grain (≥10 μm), Ge-related semiconductors, on insulator is desired for realization of advanced flexible electronics. To achieve this, we have developed the gold-induced layer-exchange crystallization technique using a-SiGe/Au stacked structures. By introduction of a diffusion barrier with appropriate thickness into the a-SiGe/Au interface, (111)-oriented quasi-single crystal SiGe is achieved on insulating substrates at low temperatures (∼300°C). Based on these results, this technique is developed to form quasi-single crystal Ge on flexible plastic sheets. The grown layers have high carrier mobility, because residual Au hardly deteriorates the electrical properties of grown layers due to the low solubility of Au in Ge. This technique will facilitate the realization of advanced flexible electronics.

    DOI: 10.1149/06910.0021ecst

  • Ultra-low temperature (∼180°C) solid-phase crystallization of GeSn on insulator triggered by laser-anneal seeding

    301 - 304   2015.1

     More details

    Language:English   Publishing type:Research paper (other academic)  

    Solid-phase crystallization (SPC) of amorphous-GeSn (a-GeSn) films on insulating substrates has been developed combining with laser-anneal seeding, to realize next generation thin-film devices. By this technique, we have realized crystallization of GeSn (>10%) at low temperatures (∼180°C), which is applicable to flexible thin-film devices on low cost plastic substrates with low softening temperatures (∼200°C). In addition, the starting point of crystallization can be controlled by seeding, which is a big advantage in circuit designing.

    DOI: 10.1149/06905.0301ecst

  • Non-thermal equilibrium formation of Ge1-xSnx (0蠆x蠆0.2) crystals on insulator by pulsed laser annealing

    297 - 300   2015.1

     More details

    Language:English   Publishing type:Research paper (other academic)  

    To realize high-speed thin film transistors, we investigated formation of Ge1-xSnx (0蠆x蠆0.2) crystals on quartz by pulsed laser annealing. The process-window necessary for crystallization was found to be significantly expanded by introducing Sn, i.e., 16 mJ/cm2 for Ge, ∼130 mJ/cm2 for GeSn. Moreover, Ge0.8Sn0.2 samples had high substitutional Sn concentration (∼7%) after the growth. These results are expected to be useful to realize highspeed thin film transistors and multi-functional devices.

    DOI: 10.1149/06905.0297ecst

  • Thickness dependent solid-phase crystallization of amorphous GeSn on insulating substrates at low temperatures (≤250°C) Reviewed

    4 ( 12 )   P95 - P97   2015

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Low-temperature (≤250°C) solid-phase crystallization of amorphous-GeSn films (Sn-concentration: 20%-30%, thickness: 30-100 nm) on insulating-substrates are investigated. As a result, we have realized high growth-rate (∼13 μm/h) for samples (film-thickness: 100 nm, initial Sn-concentration: 30%) at surprisingly low-temperature (150°C), which is very useful to realize flexible thin-film transistors. During this study, we encountered interesting phenomena that growth rates significantly decrease with decreasing filmthickness. In addition, substitutional Sn-concentrations in grown layers increased with decreasing film thickness. These phenomena are attributed to change in bond arrangement processes caused by interface. This technique is expected to facilitate next generation flexible thin-film transistors.

    DOI: 10.1149/2.0021512ssl

  • Ultra-high-speed lateral solid phase crystallization of GeSn on insulator combined with Sn-melting-induced seeding Reviewed International journal

    Hironori Chikita, Ryo Matsumura, Yuki Kai, Taizoh SADOH, Masanobu Miyao

    Applied Physics Letters   105 ( 20 )   2014.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: doi.org/10.1063/1.4902344

  • Ultra-high-speed lateral solid phase crystallization of GeSn on insulator combined with Sn-melting-induced seeding Reviewed

    H. Chikita, R. Matsumura, Y. Kai, T. Sadoh, M. Miyao

    Applied Physics Letters   105 ( 20 )   2014.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4902344

  • Comprehensive study of Al-induced layer-exchange growth for orientation-controlled Si crystals on SiO2 substrates Reviewed International journal

    Masahi Kurosawa, Taizoh SADOH, Masanobu Miyao

    Journal of Applied Physics   116 ( 17 )   2014.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: doi.org/10.1063/1.4901262

  • Large-grain SiGe-on-insulator with uniform Si concentration by segregation-free rapid-melting growth Reviewed International journal

    Ryo Matsumura, Ryusuke Kato, Taizoh SADOH, Masanobu Miyao

    Applied Physics Letters   105 ( 10 )   2014.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: doi: 10.1063/1.4895512

  • Large-grain SiGe-on-insulator with uniform Si concentration by segregation-free rapid-melting growth Reviewed

    Ryo Matsumura, Ryusuke Kato, Taizoh Sadoh, Masanobu Miyao

    Applied Physics Letters   105 ( 10 )   2014.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4895512

  • Self-Organized Travelling-Zone-Melting Growth of a-Ge/Sn/c-Ge Stacked-Structures for High-Quality GeSn

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   3 ( 10 )   340 - 343   2014.7

     More details

    Language:English  

    DOI: 10.1149/2.0011411jss

  • High carrier mobility in orientation-controlled large-grain (≥50 um) Ge directly formed on flexible plastic by nucleation-controlled gold-induced-crystallization Reviewed International journal

    104 ( 25 )   2014.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    フレキシブルなプラスチックシート上に、方位制御された大粒径Ge結晶を実現。電気特性を評価し、高いキャリヤ移動度を実証。プラスチック上に多機能を有する異種デバイスを混載する基盤技術の創出であり、次世代エレクトロニクスの実現を加速する重要な成果である。

    DOI: http://dx.doi.org/10.1063/1.4885716

  • High carrier mobility in orientation-controlled large-grain (>50 μm) Ge directly formed on flexible plastic by nucleation-controlled gold-induced-crystallization Reviewed

    104 ( 25 )   2014.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    High-carrier-mobility semiconductors on flexible-plastic are essential to realize flexible electronics, for this purpose, electrical properties of orientation-controlled large-grain Cie crystals on flexible-plastic dircctly formed by nucleation-controlled gold-induced-crystallization (GIC) are examined, and compared with those obtained by aluminum-induced-crystallization (AIC). The Ge crystals show p- Type conductions. Here, hole concentrations are 2.2 x1017 and 5.8 x 1020cm 3 for GIC-Ge and AIC-Ge, respectively, which are explained on the basis of the solubility of Au and AL in Ge. Thanks to the low hole concentration, GIC-Ge shows high hole mobility (160cm2V-1 'S-1') compared with AIC-Ge (37cm2V-1 'S-1'). These demonstrate significant advantage of GIC to realize high-performance flexible-electronics.

    DOI: 10.1063/1.4885716

  • Sn-induced low-temperature (similar to 150 degrees C) crystallization of Ge on insulator

    THIN SOLID FILMS   557   155 - 158   2014.4

     More details

    Language:English  

    DOI: 10.1016/j.tsf.2013.08.123

  • フレキシブルエレクトロニクス創成に向けた金誘起層交換成長法による擬似単結晶Ge/プラスチックの形成 (有機エレクトロニクス) Reviewed

    朴 鍾爀, 宮尾 正信, 佐道 泰造

    114 ( 2 )   17 - 20   2014.4

     More details

    Language:Japanese   Publishing type:Research paper (scientific journal)  

    Low-temperature (≤250℃) formation technique of orientation-controlled large-grain Ge thin films on insulator is desirable for realization of advanced flexible electronics. To achieve this, the Au-induced crystallization technique combined with inter-diffusion-control and interface-energy-modulation techniques has been investigated. Consequently, selective formation of (100) or (111)-oriented large-grain (>20 μm) Ge crystals on insulator have been realized. Moreover, formation of (111)-oriented large-grain Ge crystals directly on plastic substrates is demonstrated. This technique facilitates realization of future flexible electronics.

  • フレキシブルエレクトロニクス創成に向けた金誘起層交換成長法による擬似単結晶Ge/プラスチックの形成 (シリコン材料・デバイス) Reviewed

    朴 鍾爀, 宮尾 正信, 佐道 泰造

    114 ( 1 )   17 - 20   2014.4

     More details

    Language:Japanese   Publishing type:Research paper (scientific journal)  

    Low-temperature (≤250℃) formation technique of orientation-controlled large-grain Ge thin films on insulator is desirable for realization of advanced flexible electronics. To achieve this, the Au-induced crystallization technique combined with inter-diffusion-control and interface-energy-modulation techniques has been investigated. Consequently, selective formation of (100) or (111)-oriented large-grain (>20 μm) Ge crystals on insulator have been realized. Moreover, formation of (111)-oriented large-grain Ge crystals directly on plastic substrates is demonstrated. This technique facilitates realization of future flexible electronics.

  • Sn-induced low-temperature (∼ 150 °c) crystallization of Ge on insulator Reviewed

    557   155 - 158   2014.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Low-temperature formation (∼ 150 °C) of Ge films on insulator is investigated for realization of advanced flexible devices. We propose utilization of Sn as catalyst to enhance the crystallization at low-temperatures. By annealing (150-200 °C) of a-Ge/Sn stacked structures formed on insulators, the composition distributions of Ge/Sn layers are inverted, and Sn/poly-Ge stacked structures are obtained. The results demonstrate that the crystallization occurs at 150 °C, which is slightly below the eutectic temperatures. This Sn-induced crystallization technique is useful to obtain poly-Ge on low-cost flexible substrates (softening temperature: ∼ 200 °C).

    DOI: 10.1016/j.tsf.2013.08.123

  • In-depth analysis of high-quality Ge-on-insulator structure formed by rapid-melting growth Reviewed

    H. Chikita, R. Matsumura, Y. Tojo, H. Yokoyama, T. Sadoh, M. Miyao

    Thin Solid Films   557   139 - 142   2014.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2013.08.035

  • Dynamic analysis of rapid-melting growth using SiGe on insulator Reviewed

    Ryo Matsumura, Yuki Tojo, Masashi Kurosawa, Taizoh Sadoh, Masanobu Miyao

    Thin Solid Films   557   125 - 128   2014.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2013.08.129

  • Coherent lateral-growth of Ge over insulating film by rapid-melting- crystallization Reviewed

    T. Sadoh, M. Kurosawa, K. Toko, M. Miyao

    Thin Solid Films   557   135 - 138   2014.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2013.08.127

  • In-depth analysis of high-quality Ge-on-insulator structure formed by rapid-melting growth

    THIN SOLID FILMS   557   139 - 142   2014.4

     More details

    Language:English  

    DOI: 10.1016/j.tsf.2013.08.035

  • Coherent lateral-growth of Ge over insulating film by rapid-melting-crystallization

    THIN SOLID FILMS   557   135 - 138   2014.4

     More details

    Language:English  

    DOI: 10.1016/j.tsf.2013.08.127

  • Dynamic analysis of rapid-melting growth using SiGe on insulator

    THIN SOLID FILMS   557   125 - 128   2014.4

     More details

    Language:English  

    DOI: 10.1016/j.tsf.2013.08.129

  • Giant-Lateral-Growth of SiGe Stripes on Insulating-Substrate by Self-Organized-Seeding and Rapid-Melting-Growth in Solid-Liquid Coexisting Region

    ECS SOLID STATE LETTERS   3 ( 5 )   P61 - P64   2014.3

     More details

    Language:English  

    DOI: 10.1149/2.003405ssl

  • Formation of Large Grain Ge Single Crystal on Insulating Substrate By Liquid-Solid Coexisting Annealing of a-Ge(Sn)

    ECS Transactions   61 ( 3 )   97 - 100   2014.3

     More details

    Language:English  

  • Low Temperature (~ 300oC) Epitaxial Growth of SiGe by Liquid-Solid Coexisting Annealing of A-GeSn/Si (100) Structure

    ECS Transactions   58 ( 9 )   257 - 262   2014.3

     More details

    Language:English  

  • The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100)

    7   1409 - 1421   2014.2

     More details

    Language:English  

  • 111)-oriented large-grain (50 um) Ge crystals directly formed on flexible plastic substrate by gold-induced layer-exchange crystallization Reviewed

    Jong Hyeok Park, Masanobu Miyao, Taizoh Sadoh

    Japanese journal of applied physics   53 ( 2 PART 1 )   2014.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.53.020302

  • (111)-oriented large-grain (≧50 μm) Ge crystals directly formed on flexible plastic substrate by gold-induced layer-exchange crystallization Reviewed International journal

    53 ( 2 )   2014.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    不定型なプラスチック基板上における方位制御された大粒径Ge結晶の低温成長を実現。フレキシブルなプラスチック上に多機能を有する異種デバイスを混載する基盤技術の創出であり、次世代エレクトロニクスの実現を加速する重要な成果である。

  • Ultralow-temperature catalyst-induced-crystallization of SiGe on plastic for flexible electronics

    T. Sadoh, J. H. Park, M. Kurosawa, M. Miyao

    7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014   47 - 48   2014.1

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1109/ISTDM.2014.6874633

  • Low temperature (~300°C) epitaxial growth of SiGe by liquid-solid coexisting annealing of A-GeSn/Si(100) structure

    137 - 140   2014.1

     More details

    Language:English   Publishing type:Research paper (other academic)  

    To develop a new low-temperature crystallization technique, annealing characteristics of a-GeSn/Si(100) structures are investigated. It is revealed that epitaxial growth accompanying Si-Ge mixing is generated at temperatures in the liquid-solid coexisting region of the Ge-Sn system. The annealing temperature necessary for epitaxial growth is significantly decreased by increasing annealing time and/or Sn concentration. Consequently, epitaxial growth at 300°C becomes possible. These findings are expected to be useful to realize next-generation large-scale integrated circuits, where various multi-functional devices are integrated.

    DOI: 10.4028/www.scientific.net/AMM.481.137

  • Giant-lateral-growth of SiGe stripes on insulating-substrate by self-organized-seeding and rapid-melting-growth in solid-liquid coexisting region Reviewed

    Ryo Matsumura, Ryusuke Kato, Yuki Tojo, Masashi Kurosawa, Taizoh Sadoh, Masanobu Miyao

    ECS Solid State Letters   3 ( 5 )   P61 - P64   2014.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/2.003405ssl

  • Formation of quasi-single-crystal Ge on plastic by nucleation-controlled Au-induced layer-exchange growth for flexible electronics

    Jong Hyeok Park, Masanobu Miyao, Taizoh Sadoh

    21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014 Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices TFT Technologies and FPD Materials   291 - 294   2014.1

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1109/AM-FPD.2014.6867200

  • Formation of large grain Ge single crystal on insulating substrate by liquid-solid coexisting annealing of a-Ge(Sn) Reviewed

    R. Matsumura, Y. Kai, H. Chikita, Taizoh Sadoh, M. Miyao

    International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 4 - 225th ECS Meeting ECS Transactions   61 ( 3 )   97 - 100   2014.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/06103.0097ecst

  • Formation of giant SiGe crystals on insulator by self-organized-seeding rapid-melting growth

    Ryo Matsumura, Hironori Chikita, Taizoh Sadoh, M. Miyao

    2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013 Quantum, Nano, Micro Technologies and Applied Researches   27 - 29   2014.1

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.4028/www.scientific.net/AMM.481.27

  • Effect of Sn-doped Ge insertion layers on epitaxial growth of ferromagnetic Fe3Si films on a flexible substrate

    Hidenori Higashi, Yuichi Fujita, Makoto Kawano, Junya Hirayama, Shinya Yamada, Jong Hyeok Park, Taizoh Sadoh, Masanobu Miyao, Kohei Hamaya

    7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014   59 - 60   2014.1

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1109/ISTDM.2014.6874683

  • Comprehensive study of Al-induced layer-exchange growth for orientation-controlled Si crystals on SiO 2 substrates Reviewed

    Masashi Kurosawa, Taizoh Sadoh, Masanobu Miyao

    Journal of Applied Physics   116 ( 17 )   2014.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4901262

  • (111)-oriented large-grain (≥50 µm) Ge crystals directly formed on flexible plastic substrate by gold-induced layer-exchange crystallization Reviewed

    53 ( 2 )   20302 - 20302   2014.1

     More details

    Language:Others   Publishing type:Research paper (scientific journal)  

  • Self-organized travelling-zone-melting growth of a-Ge/Sn/c-Ge stacked-structures for high-quality GeSn Reviewed

    Ryo Matsumura, Yuki Kinoshita, Yuki Tojo, Taizoh Sadoh, Tomoaki Nishimura, Masanobu Miyao

    ECS Journal of Solid State Science and Technology   3 ( 10 )   P340 - P343   2014

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/2.0011411jss

  • The effects of annealing temperatures on composition and strain in SixGe1-x obtained by melting growth of electrodeposited Ge on Si (100) Reviewed

    Mastura Shafinaz Zainal Abidin, Tahsin Morshed, Hironori Chikita, Yuki Kinoshita, Shunpei Muta, Mohammad Anisuzzaman, Jong Hyeok Park, Ryo Matsumura, Mohamad Rusop Mahmood, Taizoh Sadoh, Abdul Manaf Hashim

    Materials   7 ( 2 )   1409 - 1421   2014

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.3390/ma7021409

  • Atomically-Coherent-Coalescence of Two Growth-Fronts in Ge Stripes on Insulator by Rapid-Melting Lateral-Crystallization

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   2 ( 3 )   54 - 57   2013.12

     More details

    Language:English  

    DOI: 10.1149/2.005303jss

  • Crystallization of Electrodeposited Germanium Thin Film on Silicon (100)

    Taizoh SADOH

    Materials   6   5047 - 5057   2013.11

     More details

    Language:English  

  • Atomically-coherent-coalescence of two growth-fronts in Ge stripes on insulator by rapid-melting lateral-crystallization Reviewed

    Masashi Kurosawa, Kaoru Toko, Taizoh Sadoh, Ichiro Mizushim, Masanobu Miyao

    ECS Journal of Solid State Science and Technology   2 ( 3 )   2013.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/2.005303jss

  • Nucleation-controlled gold-induced-crystallization for selective formation of Ge(100) and (111) on insulator at low-temperature (~250°C) Reviewed International journal

    103 ( 8 )   2013.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    不定型な絶縁基板上における方位制御された大粒径Ge結晶の低温成長を実現。プラスチック上に多機能を有する異種デバイスを混載する基盤技術の創出であり、次世代エレクトロニクスの実現を加速する重要な成果である。

    DOI: http://dx.doi.org/10.1063/1.4819015

  • Nucleation-controlled gold-induced-crystallization for selective formation of Ge(100) and (111) on insulator at low-temperature (∼250 °c) Reviewed

    103 ( 8 )   2013.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Selective formation of Ge(100) and (111) on amorphous-insulator at low-temperatures (∼250 °C) is realized through gold-induced- crystallization using a-Ge/Au/SiO2 stacked-structures by combining interface-energy-modulation of substrates. Introduction of thin-Al 2O3 layers (∼7 nm thickness) at a-Ge/Au interfaces enables large-grain (≥20 μm) Ge(111) formation, which is speculated to be due to suppression of random bulk-nucleation and domination of (111)-oriented interface-nucleation on SiO2. To examine this speculation, Al 2O3-covered substrates are employed. This results in formation of Ge(100), due to energetically favorable (100)-oriented interface-nucleation on Al2O3. Consequently, large-grain (≥20 μm) Ge(100) and (111) are achieved on amorphous-insulators at 250 °C. This technique is very useful to realize flexible-electronics.

    DOI: 10.1063/1.4819015

  • Effects of pattern dimensions on stabilization of crystal orientation for (111) ge-on-insulator in rapid melting growth Reviewed

    Mohammad Anisuzzaman, Shunpei Muta, Abdul Manaf Hashim, Taizoh Sadoh

    Research Reports on Information Science and Electrical Engineering of Kyushu University   18 ( 2 )   69 - 74   2013.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Orientation-control of ge-stripes-on-insulator by narrowing in rapid-melting growth from SI(111) seed Reviewed

    Mohammad Anisuzzaman, Shunpei Muta, Masanao Takahashi, Abdul Manaf Hashim, Taizoh Sadoh

    ECS Solid State Letters   2 ( 9 )   P76 - P78   2013.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/2.008309ssl

  • Laterally-graded doping into ge-on-insulator by combination of ion-implantation and rapid-melting growth Reviewed

    Ryo Matsumura, Mohammad Anisuzzaman, Hiroyuki Yokoyama, Taizoh Sadoh, Masanobu Miyao

    ECS Solid State Letters   2 ( 7 )   2013.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/2.002307ssl

  • Orientation-Control of Ge-Stripes-on-Insulator by Narrowing in Rapid-Melting Growth from Si(111) Seed

    Taizoh SADOH

    ECS SOLID STATE LETTERS   2 ( 9 )   P76 - P78   2013.6

     More details

    Language:English  

    DOI: 10.1149/2.008309ssl

  • Low-temperature crystallization of amorphous silicon and amorphous germanium by soft X-ray irradiation Reviewed

    Akira Heya, Kazuhiro Kanda, Kaoru Toko, Taizoh Sadoh, Sho Amano, Naoto Matsuo, Shuji Miyamoto, Masanobu Miyao, Takayasu Mochizuki

    Thin Solid Films   534   334 - 340   2013.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2013.02.129

  • Laterally-Graded Doping into Ge-on-Insulator by Combination of Ion-Implantation and Rapid-Melting Growth

    ECS SOLID STATE LETTERS   2 ( 7 )   P58 - P60   2013.4

     More details

    Language:English  

    DOI: 10.1149/2.002307ssl

  • Formation of laterally-graded Ge based hetero-structure Reviewed

    Ryo Matsumura, Taizoh Sadoh, Masanobu Miyao

    IEICE technical report   113 ( 18 )   17 - 23   2013.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Formation of laterally-graded Ge based hetero-structure Reviewed

    Ryo Matsumura, Taizoh Sadoh, Masanobu Miyao

    IEICE technical report   113 ( 17 )   17 - 23   2013.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • 溶融法による横方向組成傾斜型Ge系ヘテロ構造の形成

    佐道 泰造, 宮尾 正信

    電子情報通信学会 信学技報   113 ( 17 )   17 - 23   2013.4

     More details

    Language:Japanese  

  • High-quality formation of multiply stacked SiGe-on-insulator structures by temperature -modulated successive rapid-melting-growth Reviewed International journal

    Applied Physics Letters   102 ( 9 )   2013.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • High-quality formation of multiply stacked SiGe-on-insulator structures by temperature-modulated successive rapid-melting-growth Reviewed

    Yuki Tojo, Ryo Matsumura, Hiroyuki Yokoyama, Masashi Kurosawa, Kaoru Toko, Taizoh Sadoh, Masanobu Miyao

    Applied Physics Letters   102 ( 9 )   2013.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4794409

  • High-quality hybrid-GeSn/Ge stacked-structures by low-temperature Sn induced-melting growth Reviewed

    Y. Kinoshita, R. Matsumura, T. Sadoh, T. Nishimura, M. Miyao

    ECS Transactions   58 ( 9 )   179 - 184   2013.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/05809.0179ecst

  • Orientation stabilized rapid melting growth of thin (100) ge-on-insulator structures and their implementation in Homoepitaxial growth Reviewed

    Mohammad Anisuzzaman, Shunpei Muta, Abdul Manaf Hashim, Taizoh Sadoh

    Research Reports on Information Science and Electrical Engineering of Kyushu University   18 ( 2 )   63 - 67   2013.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Low-temperature metal-induced crystallization of orientation-controlled SiGe on insulator for flexible electronics Reviewed

    T. Sadoh, J. H. Park, M. Kurosawa, M. Miyao

    ECS Transactions   58 ( 9 )   213 - 221   2013.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/05809.0213ecst

  • Liquid-solid coexisting annealing of a-GeSn/Si(100) structure for low temperature epitaxial growth of SiGe Reviewed

    H. Chikita, R. Matsumura, Taizoh Sadoh, M. Miyao

    ECS Transactions   58 ( 9 )   257 - 262   2013.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/05809.0257ecst

  • Crystallization of electrodeposited germanium thin film on silicon (100) Reviewed

    Mastura Shafinaz Zainal Abidin, Ryo Matsumura, Mohammad Anisuzzaman, Jong Hyeok Park, Shunpei Muta, Mohamad Rusop Mahmood, Taizoh Sadoh, Abdul Manaf Hashim

    Materials   6 ( 11 )   5047 - 5057   2013

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.3390/ma6115047

  • Formation of Ge-on-Insulator Structures on Si platform by SiGe-mixing-triggered rapid-melting growth using RTA technique

    Ichiro Mizushima, Taizoh Sadoh, Masanobu Miyao

    2013 13th International Workshop on Junction Technology, IWJT 2013 Extended Abstracts of the 13th International Workshop on Junction Technology 2013, IWJT 2013   30 - 31   2013

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1109/IWJT.2013.6644498

  • Enhanced interfacial-nucleation in al-induced crystallization for (111) Oriented Si1-xGex (0 ≤ x ≤ 1) films on insulating substrates Reviewed

    1 ( 3 )   P144 - P147   2012.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Orientation-controlled Si1-xGex (0≤ x≤1) films on insulating substrates are essential to achieve high-efficiency solar-cells and highspeed thin-film-transistors. We investigate Al-induced crystallization of amorphous-Si1-xGex/Al-oxide/Al/quartz stacked-structures as a function of Ge-fraction, air-exposure time of Al surfaces, and thicknesses of Al and SiGe films. By tuning interfacial Al-oxide layer thickness, which is controlled by air-exposure time, (100) or (111) Si1-xGex (x < 0.2) layers are selectively formed. However, increase of Ge-fraction significantly enhances the random bulk-nucleation, which results in poly-crystalline Si1-xGe x (x ≥ 0.2) with random-orientations. To enhance interfacial-nucleation at Al/quartz over bulk-nucleation, film-thickness of Al and SiGe are thinned to 50 nm. This achieves (111)-oriented Si 1-xGex films with the whole Ge fractions. This oriented-growth can be explained by the theoretical calculation that (111) SiGe has the minimum surface energy on quartz substrates.

    DOI: 10.1149/2.010203jss

  • Hybrid-formation of Ge-on-insulator structures on Si platform by SiGe-mixing-triggered rapid-melting growth - A road to artificial crystal

    M. Miyao, M. Kurosawa, K. Toko, Y. Tojo, Taizoh Sadoh

    12th High Purity Silicon Symposium - 222nd ECS Meeting High Purity Silicon 12   50   59 - 70   2012.12

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1149/05005.0059ecst

  • Growth-rate-dependent laterally graded SiGe profiles on insulator by cooling-rate controlled rapid-melting-growth Reviewed

    Ryo Matsumura, Yuki Tojo, Masashi Kurosawa, Taizoh Sadoh, Ichiro Mizushima, Masanobu Miyao

    Applied Physics Letters   101 ( 24 )   2012.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4769998

  • Formation of large grain SiGe on insulator by Si segregation in seedless-rapid-melting process

    R. Kato, M. Kurosawa, R. Matsumura, Y. Tojo, T. Sadoh, M. Miyao

    5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting SiGe, Ge, and Related Compounds 5 Materials, Processing, and Devices   431 - 436   2012.12

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1149/05009.0431ecst

  • Formation of graded SiGe on insulator by segregation-controlled rapid-melting-growth

    R. Matsumura, Y. Tojo, H. Yokoyama, M. Kurosawa, Taizoh Sadoh, M. Miyao

    5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting SiGe, Ge, and Related Compounds 5 Materials, Processing, and Devices   747 - 751   2012.12

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1149/05009.0747ecst

  • Growth-rate-dependent laterally graded SiGe profiles on insulator by cooling-rate controlled rapid-melting-growth Reviewed International journal

    Ryo Matsumura, Yuki Tojo, Masashi Kurosawa, Taizoh SADOH, I. Mizushima, M. Miyao

    Applied Physics Letters   101 ( 24 )   2012.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Formation of nanostructured germanium-on-insulator for integration of multi-functional materials on a panel

    M. Anisuzzaman, S. Muta, A. M. Hashim, M. Miyao, T. Sadoh

    19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012   235 - 238   2012.10

     More details

    Language:English   Publishing type:Research paper (other academic)  

  • Crystallization mechanism of a-Si and a-Ge by soft X-ray irradiation

    Shota Kino, Akira Heya, Yuki Nonomura, Naoto Matsuo, Kazuhiro Kanda, Shuji Miyamoto, Sho Amano, Takayasu Mochizuki, Kaoru Toko, Taizoh Sadoh, Masanobu Miyao

    19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012   223 - 226   2012.10

     More details

    Language:English   Publishing type:Research paper (other academic)  

  • (111)-Oriented large-grain Ge on insulator by gold-induced crystallization combined with interfacial layer insertion

    Jong Hyeok Park, Tsuneharu Suzuki, Masashi Kurosawa, Masanobu Miyao, Taizoh Sadoh

    19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012   231 - 234   2012.10

     More details

    Language:English   Publishing type:Research paper (other academic)  

  • Hybrid-Formation of Ge-on-Insulator Structures on Si Platform by SiGe-Mixing-Triggered Rapid-Melting Growth - A Road to Artificial Crystal -

    HIGH PURITY SILICON 12   50 ( 5 )   59 - 70   2012.10

     More details

    Language:English  

    DOI: 10.1149/05005.0059ecst

  • Formation of Large Grain SiGe on Insulator by Si Segregation in Seedless-Rapid-Melting Process

    SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES   50 ( 9 )   431 - 436   2012.10

     More details

    Language:English  

    DOI: 10.1149/05009.0431ecst

  • Formation of Graded SiGe on Insulator by Segregation-Controlled Rapid-Melting-Growth

    SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES   50 ( 9 )   547 - 751   2012.10

     More details

    Language:English  

    DOI: 10.1149/05009.0747ecst

  • Single-crystalline laterally graded GeSn on insulator structures by segregation controlled rapid-melting growth Reviewed

    Masashi Kurosawa, Yuki Tojo, Ryo Matsumura, Taizoh Sadoh, Masanobu Miyao

    Applied Physics Letters   101 ( 9 )   2012.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4748328

  • Enhanced Interfacial-Nucleation in Al-Induced Crystallization for (111) Oriented Si1-xGex (0 <= x <= 1) Films on Insulating Substrates

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   1 ( 3 )   144 - 147   2012.8

     More details

    Language:English  

    DOI: 10.1149/2.010203jss

  • Single-crystalline laterally graded GeSn on insulator structures by segregation controlled rapid-melting growth Reviewed International journal

    M. Kurosawa, Y. Tojo, R. Matsumura, T. Sadoh, and M. Miyao

    Applied Physics Letters   101 ( 9 )   2012.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Crystallization mechanism of thick a-Si 0.5Ge 0.5 film by excimer laser annealing

    Shota Kino, Yuki Nonomura, Akira Heya, Naoto Matsuo, Kazuhiro Kanda, Shuji Miyamoto, Sho Amano, Takayasu Mochizuki, Kaoru Toko, Taizoh Sadoh, Masanobu Miyao

    10th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2012 IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai   98 - 99   2012.7

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1109/IMFEDK.2012.6218600

  • Epitaxial-Template Structure Utilizing Ge-on-Insulator Stripe Arrays with Nanospacing for Advanced Heterogeneous Integration on Si Platform

    JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 6 )   06FF04-1 - 06FF04-5   2012.6

     More details

    Language:English  

    DOI: 10.1143/JJAP.51.06FF04

  • Epitaxial-template structure utilizing Ge-on-insulator stripe arrays with nanospacing for advanced heterogeneous integration on Si platform Reviewed

    Abdul Manaf Hashim, Mohamad Anisuzzaman, Shunpei Muta, Taizoh Sadoh, Masanobu Miyao

    Japanese journal of applied physics   51 ( 6 PART 2 )   2012.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.51.06FF04

  • S iG e ミキシング誘起溶融成長によるG OI(G e on Ins ulator)の形成 人工単結晶への道 Reviewed

    81   410   2012.5

     More details

    Language:Japanese   Publishing type:Research paper (scientific journal)  

  • SiGeミキシング誘起溶融成長によるGOI (Ge on Insulator) の形成 人工単結晶への道 Reviewed

    宮尾 正信, 佐道 泰造, 都甲 薫, 黒澤 昌志

    応用物理   81 ( 5 )   410 - 414   2012.5

     More details

    Language:Japanese   Publishing type:Research paper (scientific journal)  

    The development of high-quality Ge-on-insulator (GOI) structures is essential for making a breakthrough into the scaling limit of Si large-scale integrated circuits. In the present paper, we review a new GOI growth technique, i.e., the SiGe-mixing-triggered rapid-melting growth technique, which enables chip-sized and mesh-shaped GOI structures. In addition, the integration of GOI(111) on Si(100) substrates becomes possible by combining this method with the Si-microseeding technique. These progresses pave the way for the artificial single-crystal technology.

    DOI: 10.11470/oubutsu.81.5_410

  • 絶縁膜上におけるGe(Si)薄膜の溶融成長 Si偏析効果による大粒径化 Reviewed

    加藤 立奨, 黒澤 昌志, 横山 裕之, 佐道 泰造, 宮尾 正信

    電子情報通信学会技術研究報告. OME, 有機エレクトロニクス   112 ( 19 )   61 - 62   2012.4

     More details

    Language:Japanese   Publishing type:Research paper (scientific journal)  

    Melting growth of Si-doped Ge films, i.e., Ge(Si) films, on insulator has been investigated. After rapid-thermal annealing of Ge(Si) films in the temperatures region surrounded with the liquidus curve and solidus curve of the phase diagram of the SiGe system, SiGe crystals with large-grains (15-30μm) were formed. The Si concentration profiles in the grains showed peaks at the center of grains. The peak Si concentrations were almost the same as the Si concentrations along the solidus curve at the annealing temperature. These phenomena were explained based on the formation of Si-rich micro-crystals during annealing and subsequent Si-segregated lateral-growth during cooling.

  • 界面酸化膜挿入型Au誘起層交換成長法による大粒径Ge(111)/絶縁膜の低温成長 界面酸化膜厚依存性 Reviewed

    鈴木 恒晴, 朴 鍾?, 黒澤 昌志, 宮尾 正信, 佐道 泰造

    112 ( 19 )   71 - 73   2012.4

     More details

    Language:Japanese   Publishing type:Research paper (scientific journal)  

    A technique for low-temperature(<〜350℃) formation of orientation-controlled large-grain Ge films on insulating layers is desirable for realization of flexible high-speed thin film transistors. In line with this, we have investigated Au-induced layer-exchange crystallization using a-Ge/Au/insulator stacked structures where Al_2O_3 layers were inserted at a-Ge/Au interfaces. Consequently, (111)-oriented large-grain (20-50 μm) films are obtained by inserting the interfacial layers (〜3 μm). These phenomena are explained based on the retardation of random bulk nucleation in Au films and thus domination of(111)-oriented nucleation on insulators, caused by suppression of Ge/Au interdiffusion.

  • Hybrid-orientation Ge-on-insulator structures on (100) Si platform by Si micro-seed formation combined with rapid-melting growth Reviewed

    Masashi Kurosawa, Naoyuki Kawabata, Taizoh Sadoh, Masanobu Miyao

    Applied Physics Letters   100 ( 17 )   2012.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4705733

  • Hybrid-orientation Ge-on-insulator structures on (100) Si platform by Si micro-seed formation combined with rapid-melting growth Reviewed International journal

    M. Kurosawa, N. Kawabata, T. Sadoh, and M. Miyao

    Applied Physics Letters   100 ( 17 )   2012.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Nano-lithography free formation of high density Ge-on-insulator network for epitaxial template Reviewed International journal

    H. Yokoyama, K. Toko, T. Sadoh, and M. Miyao

    Applied Physics Letters   100 ( 9 )   2012.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Effects of dose on activation characteristics of P in Ge

    Taizoh SADOH

    THIN SOLID FILMS   520 ( 8 )   3255 - 3258   2012.2

     More details

    Language:English  

    DOI: 10.1016/j.tsf.2011.10.076

  • Nano-lithography free formation of high density Ge-on-insulator network for epitaxial template Reviewed

    Hiroyuki Yokoyama, Kaoru Toko, Taizoh Sadoh, Masanobu Miyao

    Applied Physics Letters   100 ( 9 )   2012.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3691258

  • Low temperature (∼250°C) layer exchange crystallization of Si 1 - XGe x (x = 1-0) on insulator for advanced flexible devices Reviewed

    520 ( 8 )   3293 - 3295   2012.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Low-temperature (∼250°C) layer exchange crystallization of poly-Si 1 - xGe x (x = 1-0) films on insulators has been investigated for realization of advanced flexible devices. We propose utilization of Au as catalyst to enhance the crystallization at low temperatures. By annealing (∼250°C, 20 h) of the a-Si 1 - xGe x (x = 1-0)/Au stacked structures formed on insulating substrates, the SiGe and Au layers exchange their positions, and Au/poly-SiGe stacked structures are obtained. The Ge fractions of the obtained poly-SiGe layers are identical to that of the initial a-SiGe layers, and there is no Si or Ge segregation. This low temperature crystallization technique enables poly-SiGe films on plastic substrates, which are essential to realize advanced flexible devices.

    DOI: 10.1016/j.tsf.2011.10.087

  • Enhancement of SiN-induced compressive and tensile strains in Si free-standing microstructures by modulation of SiN network structures Reviewed

    T. Sadoh, M. Kurosawa, A. Heya, N. Matsuo, M. Miyao

    Thin Solid Films   520 ( 8 )   3276 - 3278   2012.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2011.10.088

  • Effects of dose on activation characteristics of P in Ge Reviewed

    Mohammad Anisuzzaman, Taizoh Sadoh

    Thin Solid Films   520 ( 8 )   3255 - 3258   2012.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2011.10.076

  • Low temperature (~250 °C) layer exchange crystallization of Si1−xGex (x=1–0) on insulator for advanced flexible devices

    Taizoh SADOH, Masanobu Miyao

    520   3293 - 3295   2012.2

     More details

    Language:English  

  • Enhancement of SiN-induced compressive and tensile strains in Si free-standing microstructures by modulation of SiN network structures

    THIN SOLID FILMS   520 ( 8 )   3276 - 3278   2012.2

     More details

    Language:English  

    DOI: 10.1016/j.tsf.2011.10.088

  • Self organization of FeGe/FeSi/FeGe layered structures on Ge and their electrical conduction properties Reviewed

    B. Matsukura, Y. Hiraiwa, T. Nakajima, K. Narumi, S. Sakai, T. Sadoh, M. Miyao, Y. Maeda

    Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCONanomat 2011 Physics Procedia   23   21 - 24   2012.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.phpro.2012.01.006

  • 軟X線源を用いた半導体薄膜の低温結晶化技術の開発 (シリコン材料・デバイス) Reviewed

    部家 彰, 野々村 勇希, 木野 翔太, 松尾 直人, 天野 壮, 宮本 修治, 神田 一浩, 望月 孝晏, 都甲 薫, 佐道 泰造, 宮尾 正信

    111 ( 357 )   71 - 76   2011.12

     More details

    Language:Japanese   Publishing type:Research paper (scientific journal)  

    It is necessary two processes (crystal-nucleus formation and crystal grain growth) for crystallization. In general, the activation energy of crystal-nucleus formation is higher than that of grain growth. To realize low-temperature crystallization, we tried to form the quasi-nucleus by soft X-ray irradiation. In this study, the effects of soft X-ray irradiation on crystallization of a-Si and a-Ge films were investigated. The crystallization temperatures of a-Si film and a-Ge film were decreased from 680℃ to 580℃ and 500℃ to 420℃ by soft X-ray irradiation, respectively. The decrease in crystallization temperature is also related to enhancement of atomic migration and atoms transitioning into a quasi-nuclei phase in the films.

  • Ion channeling study of epitaxy of iron based Heusler alloy films on Ge(111) Reviewed

    Yoshihito Maeda, Kazumasa Narumi, Seiji Sakai, Yoshikazu Terai, Kohei Hamaya, Taizoh Sadoh, Masanobu Miyao

    Thin Solid Films   519 ( 24 )   8461 - 8467   2011.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2011.05.024

  • Preface Reviewed

    Yoshihito Maeda, Yoshikazu Terai, Kevin P. Homewood, Kenichi Takarabe, Kenji Yamaguchi, Motofumi Suzuki, Taizoh Sadoh, Yoshiaki Nakamura

    Thin Solid Films   519 ( 24 )   8433   2011.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2011.05.018

  • Au-catalyst induced low temperature (∼250 °C) layer exchange crystallization for SiGe on insulator

    39 - 42   2011.8

     More details

    Language:English   Publishing type:Research paper (other academic)  

    The gold-induced crystallization technique has been investigated to achieve poly-SiGe films on insulators at low temperatures (≤ 300°C). By annealing of the amorphous SiGe (Ge concentration: 0-100%)/Au stacked structures formed on insulating substrates, positions of the SiGe and Au layers are inverted, and the Au/SiGe stacked structures are obtained. Crystallization of the SiGe layers in the inverted samples is confirmed by the Raman scattering spectroscopy analysis. Moreover, the Raman measurements reveal that the Ge fractions in the crystallized SiGe layers are almost the same as those of the initial amorphous SiGe layers. This gold-induced layer-exchange crystallization technique of SiGe layers at a low temperature (∼250°C) will be very useful to obtain poly-SiGe layers on plastic substrates, which are essential to realize flexible high-speed thin-films transistors and high-efficiency solar cells.

    DOI: 10.1149/1.3570774

  • Lateral-liquid phase epitaxy of (101) Ge-on-insulator from Si template by metal-induced crystallization

    Masashi Kurosawa, Naoyuki Kawabata, Ryusuke Kato, Taizoh Sadoh, Masanobu Miyao

    15th International Symposium on Advanced Semiconductor-on-Insulator Technology and Related Physics - 219th ECS Meeting Advanced Semiconductor-on-Insulator Technology and Related Physics 15   51 - 54   2011.8

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1149/1.3570776

  • Growth-direction dependent rapid-melting-growth of Ge-on-Insulator (GOI) and its application to Ge mesh-growth

    H. Yokoyama, Y. Ohta, K. Toko, T. Sadoh, M. Miyao

    15th International Symposium on Advanced Semiconductor-on-Insulator Technology and Related Physics - 219th ECS Meeting Advanced Semiconductor-on-Insulator Technology and Related Physics 15   55 - 60   2011.8

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1149/1.3570777

  • Chip-size formation of high-mobility Ge strips on SiN films by cooling rate controlled rapid-melting growth Reviewed International journal

    K. Toko, Y. Ohta, T. Tanaka, T. Sadoh, and M. Miyao

    Applied Physics Letters   99 ( 03 )   2011.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Chip-size formation of high-mobility Ge strips on SiN films by cooling rate controlled rapid-melting growth Reviewed

    Kaoru Toko, Yasuharu Ohta, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao

    Applied Physics Letters   99 ( 3 )   2011.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3611904

  • Strained single-crystal GOI (Ge on Insulator) arrays by rapid-melting growth from Si (111) micro-seeds

    SOLID-STATE ELECTRONICS   60 ( 1 )   22 - 25   2011.6

     More details

    Language:English  

    DOI: 10.1016/j.sse.2011.01.037

  • Strained single-crystal GOI (Ge on Insulator) arrays by rapid-melting growth from Si (1 1 1) micro-seeds Reviewed

    T. Sakane, K. Toko, T. Tanaka, T. Sadoh, M. Miyao

    Solid-State Electronics   60 ( 1 )   22 - 25   2011.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.sse.2011.01.037

  • Low-temperature (∼ 250°C) Cu-induced lateral crystallization of amorphous Ge on insulator Reviewed

    14 ( 7 )   2011.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Metal-induced lateral crystallization (MILC) of amorphous Ge has been investigated to realize low temperature formation of poly-Ge films on insulating substrates. From a comparative study of MILC with various catalysis metals (Ni, Co, Pd, and Cu), it was found that Cu enhanced both nucleation and subsequent nucleus growth the most significantly among the species. Consequently, low temperature (∼ 250°C) growth with a high velocity (∼1 m/h) of poly-Ge films becomes possible by employing Cu as the catalyst. This technique will accelerate the realization of advanced high-speed TFT on flexible substrates.

    DOI: 10.1149/1.3582794

  • Growth-direction-dependent characteristics of Ge-on-insulator by Si-Ge mixing triggered melting growth Reviewed

    Y. Ohta, T. Tanaka, K. Toko, T. Sadoh, M. Miyao

    Solid-State Electronics   60 ( 1 )   18 - 21   2011.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.sse.2011.01.039

  • Al-Induced oriented-crystallization of Si films on quartz and its application to epitaxial template for Ge growth Reviewed

    Masashi Kurosawa, Kaoru Toko, Naoyuki Kawabata, Taizoh Sadoh, Masanobu Miyao

    Solid-State Electronics   60 ( 1 )   7 - 12   2011.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.sse.2011.01.033

  • Al-Induced oriented-crystallization of Si films on quartz and its application to epitaxial template for Ge growth

    SOLID-STATE ELECTRONICS   60 ( 1 )   7 - 12   2011.6

     More details

    Language:English  

    DOI: 10.1016/j.sse.2011.01.033

  • Growth-direction-dependent characteristics of Ge-on-insulator by Si-Ge mixing triggered melting growth

    SOLID-STATE ELECTRONICS   60 ( 1 )   18 - 21   2011.6

     More details

    Language:English  

    DOI: 10.1016/j.sse.2011.01.039

  • Growth-direction-dependent characteristics of Ge-on-insulator by Si-Ge mixing triggered melting growth

    SOLID-STATE ELECTRONICS   60 ( 1 )   18 - 21   2011.6

     More details

    Language:English  

    DOI: 10.1016/j.sse.2011.01.039

  • Mesh-shape-and-size controlled rapid-melting growth for the formation of single-crystalline (100), (110) and (111) Ge networks on insulators Reviewed International journal

    I. Mizushima, K.Toko, Y. Ohta, T. Sakane, T. Sadoh, and M. Miyao

    Applied Physics Letters   98 ( 18 )   2011.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Mesh-shape-and-size controlled rapid-melting growth for the formation of single-crystalline (100), (110), and (111) Ge networks on insulators Reviewed

    Ichiro Mizushima, Kaoru Toko, Yasuharu Ohta, Takashi Sakane, Taizoh Sadoh, Masanobu Miyao

    Applied Physics Letters   98 ( 18 )   2011.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3586259

  • Growth-Direction Dependent Rapid-Melting-Growth of Ge-on-Insulator (GOI) and its Application to Ge Mesh-Growth

    ADVANCED SEMICONDUCTOR-ON-INSULATOR TECHNOLOGY AND RELATED PHYSICS 15   35 ( 5 )   55 - 60   2011.5

     More details

    Language:English  

    DOI: 10.1149/1.3570777

  • Lateral-liquid phase epitaxy of (101) Ge-on-insulator from Si template by metal-induced crystallization

    ADVANCED SEMICONDUCTOR-ON-INSULATOR TECHNOLOGY AND RELATED PHYSICS 15   35 ( 5 )   51 - 54   2011.5

     More details

    Language:English  

    DOI: 10.1149/1.3570776

  • Au-Catalyst Induced Low Temperature (similar to 250 degrees C) Layer Exchange Crystallization for SiGe on Insulator

    ADVANCED SEMICONDUCTOR-ON-INSULATOR TECHNOLOGY AND RELATED PHYSICS 15   35 ( 5 )   39 - 42   2011.5

     More details

    Language:English  

    DOI: 10.1149/1.3570774

  • Growth-Direction Dependent Rapid-Melting-Growth of Ge-on-Insulator (GOI) and its Application to Ge Mesh-Growth

    ADVANCED SEMICONDUCTOR-ON-INSULATOR TECHNOLOGY AND RELATED PHYSICS 15   35 ( 5 )   55 - 60   2011.5

     More details

    Language:English  

    DOI: 10.1149/1.3570777

  • Low-Temperature (~ 250℃) Cu-Induced Lateral Crystallization of Amorphous Ge on Insulator Reviewed International journal

    14 ( 7 )   2011.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Role of Vacancy Annihilation in Electrical Activation of P Implanted in Ge Reviewed

    Mohammad Anisuzzaman, Taizoh Sadoh

    IEICE technical report   111 ( 5 )   13 - 16   2011.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Role of Vacancy Annihilation in Electrical Activation of P Implanted in Ge Reviewed

    Mohammad Anisuzzaman, Taizoh Sadoh

    IEICE technical report   111 ( 4 )   13 - 16   2011.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Au-Induced Low-Temperature (similar to 250 degrees C) Crystallization of Si on Insulator Through Layer-Exchange Process

    ELECTROCHEMICAL AND SOLID STATE LETTERS   14 ( 6 )   H232 - H234   2011.3

     More details

    Language:English  

    DOI: 10.1149/1.3562275

  • SiGe-mixing-triggered rapid-melting-growth of high-mobility Ge-on-insulator

    Taizoh Sadoh, Kaoru Toko, Masashi Kurosawa, Takanori Tanaka, Takashi Sakane, Yasuharu Ohta, Naoyuki Kawabata, Hiroyuki Yokoyama, Masanobu Miyao

    International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, ISTESNE Technology Evolution for Silicon Nano-Electronics   8 - 13   2011.3

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.4028/www.scientific.net/KEM.470.8

  • Open-gated pH sensor fabricated on an undoped-AlGaN/GaN HEMT structure Reviewed

    Mastura Shafinaz Zainal Abidin, Abdul Manaf Hashim, Maneea Eizadi Sharifabad, Shaharin Fadzli Abd Rahman, Taizoh Sadoh

    Sensors   11 ( 3 )   3067 - 3077   2011.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.3390/s110303067

  • Dehydrogenation-Enhanced Large Strain (similar to 1.6%) in Si Pillars Covered by Si3N4 Stress Liners

    ELECTROCHEMICAL AND SOLID STATE LETTERS   14 ( 4 )   H174 - H176   2011.2

     More details

    Language:English  

    DOI: 10.1149/1.3551465

  • Selective-mapping of uniaxial and biaxial strains in Si-on-insulator microstructures by polarized microprobe Raman spectroscopy Reviewed International journal

    M. Kurosawa, T. Sadoh, and M. Miyao

    Applied Physics Letters   98 ( 1 )   2011.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Source-drain engineering using atomically controlled heterojunctions for next-generation SiGe transistor applications (Selected topics in Applied physics Technology evolution for silicon nano-electronics) Reviewed

    Kohei Hamaya, Yuichiro Ando, Taizoh Sadoh

    Japanese Journal of Applied Physics, Part 2: Letters   50 ( 1 )   10101 - 1〜7   2011.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Source-drain engineering using atomically controlled heterojunctions for next-generation SiGe transistor applications Reviewed

    Kohei Hamaya, Yuichiro Ando, Taizoh Sadoh, Masanobu Miyao

    Japanese journal of applied physics   50 ( 1 )   2011.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.50.010101

  • Single-crystalline (100) Ge networks on insulators by rapid-melting growth along hexagonal mesh-pattern Reviewed

    Kaoru Toko, Yasuharu Ohta, Takashi Sakane, Taizoh Sadoh, Ichiro Mizushima, Masanobu Miyao

    Applied Physics Letters   98 ( 4 )   2011.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3544057

  • Selective-mapping of uniaxial and biaxial strains in Si-on-insulator microstructures by polarized microprobe Raman spectroscopy Reviewed

    Masashi Kurosawa, Taizoh Sadoh, Masanobu Miyao

    Applied Physics Letters   98 ( 1 )   2011.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3535606

  • Magnetooptical properties of iron based Heusler alloy epitaxial films on Ge(111) Reviewed

    Yoshihito Maeda, Tatsuya Ikeda, Takayuki Ichikawa, Takahito Nakajima, Bui Matsukura, Taizoh Sadoh, Masanobu Miyao

    Physics Procedia   11   200 - 203   2011.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.phpro.2011.01.004

  • Source–Drain Engineering Using Atomically Controlled Heterojunctions for Next-Generation SiGe Transistor Applications Reviewed International journal

    50 ( 01 )   2011.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Single-crystalline (100) Ge networks on insulators by rapid-melting growth along hexagonal mesh-pattern Reviewed International journal

    K. Toko, Y. Ohta, T. Sakane, T. Sadoh, I. Mizushima, and M. Miyao

    Applied Physics Letters   98 ( 4 )   2011.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Atom-migration effect during crystallization of a-SiGe films by SR soft x-ray irradiation

    Shota Kino, Yuki Nonomura, Akira Heya, Naoto Matsuo, Kazuhiro Kanda, Shuji Miyamoto, Sho Amano, Takayasu Mochizuki, Kaoru Toko, Taizoh Sadoh, Masanobu Miyao

    18th International Display Workshops 2011, IDW 2011 Society for Information Display - 18th International Display Workshops 2011, IDW'11   1   659 - 662   2011

     More details

    Language:English   Publishing type:Research paper (other academic)  

  • Dehydrogenation-enhanced large strain (∼1.6%) in Si pillars covered by Si3N4 stress liners Reviewed

    14 ( 4 )   2011

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    High-strain Si-pillars are desirable for achieving high-speed three-dimensional transistors. The effects of postannealing (400-1150C) on strain-enhancement in Si-pillars covered with Si3N4 stress-liners are investigated. Before annealing, the Si3N 4 stress-liners induce strain in Si, where the direction of strain, which can be compressive or tensile, depends on the Si3N4 deposition parameters. After postannealing (800C), the strain becomes highly compressive, because of dehydrogenation-induced structural relaxation in Si 3N4 films. Consequently, compressive strains (1.6) are induced in the 200-nm-thick Si-pillars covered in 200-nm-thick Si 3N4 films after high temperature postannealing (1000-1150C). This strain-enhancement technique is useful for the realization of advanced high-speed three-dimensional transistors.

    DOI: 10.1149/1.3551465

  • Au-induced low-temperature (∼250°C) crystallization of Si on insulator through layer-exchange process Reviewed

    14 ( 6 )   2011

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Au-induced crystallization of Si through a layer-exchange process has been investigated to achieve poly-Si films on insulators at low-temperatures (∼250°C). By annealing (250-350°C) of amorphous Si (a-Si)/Au stacked structures formed on insulators, the positions of Si/Au layers are inverted, and Au/poly-Si stacked structures are obtained. This Au-induced layer-exchange growth technique at low-temperatures (∼250°C) should be very useful to obtain poly-Si films on flexible substrates, which are employed as template layers for growth of high quality Si1-xGex (x: 0-1) films to realize flexible high-speed thin-film transistors and flexible high-efficiency solar cells.

    DOI: 10.1149/1.3562275

  • High-mobility Ge on insulator (GOI) by SiGe mixing-triggered rapid-melting-growth

    T. Sadoh, M. Miyao

    4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting SiGe, Ge, and Related Compounds 4 Materials, Processing, and Devices   409 - 418   2010.12

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1149/1.3487571

  • High-mobility defect-free Ge single-crystals by rapid melting growth on insulating substrates

    Masanobu Miyao, Kaoru Toko, Masashi Kurosawa, Takanori Tanaka, Takashi Sakane, Yasuharu Ohta, Naoyuki Kawabata, Hiroyuki Yokoyama, Taizoh Sadoh

    2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings   827 - 830   2010.12

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1109/ICSICT.2010.5667440

  • Low-temperature (<= 250 degrees C) crystallization of Si on insulating substrate by gold-induced layer-exchange technique

    TENCON 2010: 2010 IEEE REGION 10 CONFERENCE   2196 - 2198   2010.11

     More details

    Language:English  

  • Defect-free Ge-on-insulator with (100) , (110), and (111) orientations by growth-directions -selected rapid-melting growth Reviewed International journal

    K. Toko, T. Tanaka, Y. Ohta, T. Sadoh, and M. Miyao

    Applied Physics Letters   97 ( 15 )   2010.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Relaxation mechanism of SiGe-on-insulator by oxidation-induced Ge condensation with H+ irradiation and postannealing Reviewed

    Masanori Tanaka, Taizoh Sadoh, Masanobu Miyao

    Journal of the Electrochemical Society   157 ( 11 )   H991 - H996   2010.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/1.3486089

  • Defect-free Ge-on-insulator with (100), (110), and (111) orientations by growth-direction-selected rapid-melting growth Reviewed

    Applied Physics Letters   97 ( 15 )   152101(1) - 152101(3)   2010.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Defect-free Ge-on-insulator with (100), (110), and (111) orientations by growth-direction-selected rapid-melting growth Reviewed

    Kaoru Toko, Takanori Tanaka, Yasuharu Ohta, Taizoh Sadoh, Masanobu Miyao

    Applied Physics Letters   97 ( 15 )   2010.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3493184

  • Relaxation Mechanism of SiGe-on-Insulator by Oxidation-Induced Ge Condensation with H(+) Irradiation and Postannealing

    JOURNAL OF THE ELECTROCHEMICAL SOCIETY   157 ( 11 )   H991 - H996   2010.9

     More details

    Language:English  

    DOI: 10.1149/1.3486089

  • Erratum Optical and electronic properties of M2Si (M = Mg, Ca and Sr) grown by reactive deposition technique (International Journal of Modern Physics B) Reviewed

    Junhua Hu, Akihiko Kato, Taizoh Sadoh, Yoshuhito Maeda, Konstantin N. Galkin, Taras V. Turchin, Nikolay G. Galkin, Hirokazu Tatsuoka

    International Journal of Modern Physics B   24 ( 23 )   2010.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1142/S0217979210056657

  • (100) orientation-controlled Ge giant-stripes on insulating substrates by rapid-melting growth combined with Si micro-seed technique Reviewed

    Kaoru Toko, Masashi Kurosawa, Hiroyuki Yokoyama, Naoyuki Kawabata, Takashi Sakane, Yasuharu Ohta, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao

    Applied Physics Express   3 ( 7 )   2010.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/APEX.3.075603

  • Optical and electronic properties of M2Si (M = Mg,Ca, Sr) grown by reactive deposition technique Reviewed

    Junhua Hu, Akihiko Kato, Taizoh Sadoh, Yoshuhito Maeda, K. N. Galkin, T. V. Turchin, Hirokazu Tatsuoka

    International Journal of Modern Physics B   24 ( 19 )   3693 - 3699   2010.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1142/S0217979210056050

  • (100) Orientation-Controlled Ge Giant-Stripes on Insulating Substrates by Rapid-Melting Growth Combined with Si Micro-Seed Technique Reviewed International journal

    K. Toko, M. Kurosawa, H. Yokoyama, N. Kawabata, T. Sakane, Y. Ohta, T. Tanaka, T. Sadoh, and M. Miyao

    Applied Physics Express   3   2010.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Microscopic studies of metal-induced lateral crystallization in SiGe Reviewed International journal

    M. Itakura, S. Masumori, N. Kuwano, H. Kanno, T. Sadoh,.and M. Miyao

    Applied Physics Letters   2010.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Effect of atomically controlled interfaces on Fermi-level pinning at metal/Ge interfaces Reviewed International journal

    K. Yamane, K. Hamaya, Y. Ando, Y. Enomoto, K. Yamamoto, T. Sadoh, and M. Miyao

    Applied Physics Letters   2010.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • ガラス上におけるSiGe薄膜のアルミニウム誘起結晶化とその成長メカニズム Reviewed

    川畑 直之, 黒澤 昌志, 佐道 泰造, 宮尾 正信

    110 ( 16 )   13 - 17   2010.4

     More details

    Language:Japanese   Publishing type:Research paper (scientific journal)  

    Large grain polycrystalline silicon-germanium (poly-SiGe) with controlled crystal orientation on glass substrates is required to achieve high speed thin-film transistors and high-efficiency thin-film solar cells. For this purpose, we have developed an advanced Al-induced crystallization (AIC) technique by controlling the interfacial oxide layers. As a results, homogeneous and large-grained (>10 μm) AIC growth was achieved for samples with the whole Ge fractions (0-100%). In addition, we evaluated crystal orientation of the poly-SiGe and discuss the growth mechanism.

  • SiGeミキシング誘起溶融法による単結晶GOI (Ge on Insulator) 形成のシード基板面方位・成長方向依存性 Reviewed

    大田 康晴, 田中 貴規, 佐道 泰造, 宮尾 正信

    110 ( 16 )   49 - 52   2010.4

     More details

    Language:Japanese   Publishing type:Research paper (scientific journal)  

    We proposed SiGe mixing triggered melting growth, and realized (100)-oriented Ge on insulator (GOI) stripes (〜400μm) by using Si(100) substrates as crystal seed. To expand the application fields of such GOI structures, GOI stripes with various crystal orientations should be achieved. In the present study, growth-direction-dependent characteristics of GOI from Si(100), (110), (111) seeding substrates are investigated. During the study, we encountered a phenomenon of rotating growth of Ge layers. The detail of the rotation growth is investigated, and a guideline to prevent this phenomenon is clarified. As a results, GOI(110) and (111) stripes without the rotation are realized, together with GOI(100) stripes. Moreover, a large mesh (500μm × 250μm) of GOI stripe is realized based on these findings.

  • High-hole-mobility single-crystalline ge thin films formed on insulating substrates by SiGe mixing-triggered directional melting growth Reviewed

    Kaoru Toko, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao

    Japanese journal of applied physics   49 ( 4 PART 2 )   2010.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.49.04DA08

  • Formation of Defect-Free Ge Island on Insulator by Ni-Imprint Induced Si Micro-Seeding Rapid Melting Reviewed

    Takashi Sakane, Kaoru Toko, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao

    IEICE technical report   110 ( 16 )   53 - 57   2010.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Formation of Defect-Free Ge Island on Insulator by Ni-Imprint Induced Si Micro-Seeding Rapid Melting Reviewed

    Takashi Sakane, Kaoru Toko, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao

    IEICE technical report   110 ( 15 )   53 - 57   2010.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Effect of atomically controlled interfaces on Fermi-level pinning at metal/Ge interfaces Reviewed

    K. Yamane, K. Hamaya, Y. Ando, Y. Enomoto, Keisuke Yamamoto, Taizoh Sadoh, M. Miyao

    Applied Physics Letters   96 ( 16 )   2010.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3368701

  • インプリントSi種結晶からの溶融エピタキシャル成長による単結晶GOIの無欠陥形成

    佐道 泰造, 宮尾 正信

    電子通信情報学会 信学技報   110 ( 15 )   53 - 57   2010.4

     More details

    Language:Japanese  

  • ガラス上におけるSiGe薄膜のアルミニウム誘起結晶化とその成長メカニズム

    佐道 泰造, 宮尾 正信

    電子通信情報学会 信学技報   110 ( 15 )   13 - 17   2010.4

     More details

    Language:Japanese  

  • SiGeミキシング誘起溶融法による単結晶GOI(Ge on Insulator)形成のシード基板面方位・成長方向依存性

    佐道 泰造, 宮尾 正信

    電子通信情報学会 信学技報   110 ( 15 )   49 - 52   2010.4

     More details

    Language:Japanese  

  • High-Hole-Mobility Single-Crystalline Ge Thin Films Formed on Insulating Substrates by SiGe Mixing-Triggered Directional Melting Growth Reviewed International journal

    K. Toko, T. Tanaka, T. Sadoh, and M. Miyao

    Japanese Journal of Applied Physics   49 ( 4 )   2010.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • High Quality Single-Crystalline Ge-Rich SiGe on Insulator Structures by Si-doping Controlled Rapid Melting Growth Reviewed International journal

    T. Tanaka, K. Toko, T. Sadoh, M. Miyao

    Applied Physics Express   3 ( 3 )   2010.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • High quality single-crystalline Ge-rich SiGe on insulator structures by Si-doping controlled rapid melting growth Reviewed

    Takanori Tanaka, Kaoru Toko, Taizoh Sadoh, Masanobu Miyao

    Applied Physics Express   3 ( 3 )   2010.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/APEX.3.031301

  • Molecular beam epitaxial growth of ferromagnetic Heusler alloys for group-IV semiconductor spintronic devices

    THIN SOLID FILMS   518   S273 - S277   2010.1

     More details

    Language:English  

    DOI: 10.1016/j.tsf.2009.10.106

  • Molecular beam epitaxial growth of ferromagnetic Heusler alloys for group-IV semiconductor spintronic devices Reviewed

    M. Miyao, K. Hamaya, T. Sadoh, H. Itoh, Y. Maeda

    Thin Solid Films   518 ( 6 SUPPL. 1 )   S273 - S277   2010.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2009.10.106

  • Liquid-phase epitaxial growth of Ge island on insulator using Ni-imprint-induced Si crystal as seed Reviewed

    Kaoru Toko, Takashi Sakane, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao

    Thin Solid Films   518 ( 6 SUPPL. 1 )   S182 - S185   2010.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2009.10.084

  • Giant growth of single crystalline Ge on insulator by seeding lateral liquid-phase epitaxy Reviewed

    T. Tanaka, M. Tanaka, M. Itakura, T. Sadoh, M. Miyao

    Thin Solid Films   518 ( 6 SUPPL. 1 )   S170 - S173   2010.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2009.10.081

  • Formation of single-crystalline Ge stripes on quartz substrates by SiGe mixing-triggered liquid-phase epitaxy Reviewed

    Kaoru Toko, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao

    Thin Solid Films   518 ( 6 SUPPL. 1 )   2010.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2009.10.083

  • Epitaxial growth of a full-Heusler alloy Co2FeSi on silicon by low-temperature molecular beam epitaxy Reviewed

    S. Yamada, K. Yamamoto, K. Ueda, Y. Ando, K. Hamaya, T. Sadoh, M. Miyao

    Thin Solid Films   518 ( 6 SUPPL. 1 )   S278 - S280   2010.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2009.10.107

  • Al-induced low-temperature crystallization of Si1 - xGex (0 < x < 1) by controlling layer exchange process Reviewed

    Masashi Kurosawa, Taizoh Sadoh, Masanobu Miyao

    Thin Solid Films   518 ( 6 SUPPL. 1 )   S174 - S178   2010.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2009.10.082

  • Epitaxial growth of a full-Heusler alloy CO2FeSi on silicon by low-temperature molecular beam epitaxy

    Taizoh SADOH

    THIN SOLID FILMS   518   S278 - S280   2010.1

     More details

    Language:English  

    DOI: 10.1016/j.tsf.2009.10.107

  • Liquid-phase epitaxial growth of Ge island on insulator using Ni-imprint-induced Si crystal as seed

    THIN SOLID FILMS   518   S181 - S185   2010.1

     More details

    Language:English  

    DOI: 10.1016/j.tsf.2009.10.084

  • Al-induced low-temperature crystallization of Si-1 (-) Ge-x(x) (0 < x < 1) by controlling layer exchange process

    Taizoh SADOH

    THIN SOLID FILMS   518   S174 - S178   2010.1

     More details

    Language:English  

    DOI: 10.1016/j.tsf.2009.10.082

  • Giant growth of single crystalline Ge on insulator by seeding lateral liquid-phase epitaxy

    Taizoh SADOH

    THIN SOLID FILMS   518   S170 - S173   2010.1

     More details

    Language:English  

    DOI: 10.1016/j.tsf.2009.10.081

  • Formation of single-crystalline Ge stripes on quartz substrates by SiGe mixing-triggered liquid-phase epitaxy

    THIN SOLID FILMS   518   S179 - S181   2010.1

     More details

    Language:English  

    DOI: 10.1016/j.tsf.2009.10.083

  • Au誘起層交換成長法によるGe結晶/絶縁膜の極低温形成(∼250o)

    朴 ジョンヒョク, 黒澤 昌志, 川畑 直之, 宮尾 正信, 佐道 泰造

    電気関係学会九州支部連合大会講演論文集   2010 ( 0 )   584 - 585   2010

     More details

    Language:Others   Publishing type:Research paper (scientific journal)  

    フレキシブルな高速薄膜トランジスタ(TFT)の実現には,高移動度を有する半導体薄膜をプラスチックの軟化温度(∼300oC)以下の極低温で高品質形成する必要がある.我々は,共晶温度の低いAu/Ge系(共晶点: 361oC)に着目し,高移動度半導体(Ge)の低温成長を検討した.非晶質Ge(100 nm)/ Au(100 nm)の積層構造を石英基板上に作製した.熱処理(200∼400oC)後の試料の組成分布の変化と結晶性を評価した処,低温(250oC)で,Ge/Auが層交換すると共に,Geが結晶化することが明らかとなった.フレキシブルな高速TFTの実現を加速する画期的な成果である.

    DOI: 10.11527/jceeek.2010.0.584.0

  • Microscopic studies of metal-induced lateral crystallization in SiGe Reviewed

    Masaru Itakura, Shunji Masumori, Noriyuki Kuwano, Hiroshi Kanno, Taizoh Sadoh, Masanobu Miyao

    Applied Physics Letters   96 ( 18 )   2010

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3422477

  • Low-temperature (≤250°C) crystallization of Si on insulating substrate by gold-induced layer-exchange technique

    2196 - 2198   2010

     More details

    Language:English   Publishing type:Research paper (other academic)  

    The gold-induced crystallization technique has been investigated to achieve poly-Si films on insulators at low temperatures (≤250°C). By annealing (∼250°C) the amorphous Si (a-Si)/Au stacked structures formed on insulating substrates, the positions of Si/Au layers are inverted, and Au/poly-Si stacked structures are obtained. On the other hand, by annealing (>400°C) the structures, mixed layers of c-Si and Au are obtained. These growth phenomena are explained on the basis of the eutectic reaction. This gold-induced layer-exchange growth technique at low-temperatures (∼250°C) is very useful to obtain poly-Si on flexible substrates, which are essential to realize flexible high-speed thin-films transistors and high-efficiency solar cells.

    DOI: 10.1109/TENCON.2010.5686705

  • Stress-enhancement in free-standing Si pillars through nonequilibrium dehydrogenation in SiN:H stress-liners by ultraviolet light irradiation Reviewed International journal

    T. Tanaka, T. Sadoh, M. Kurosawa, M. Tanaka, M. Yamaguchi, S. Suzuki, T. Kitamura, and M. Miyao

    Applied Physics Letters   2009.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Stress-enhancement in free-standing Si pillars through nonequilibrium dehydrogenation in SiN:H stress-liners by ultraviolet light irradiation Reviewed

    Takanori Tanaka, Taizoh Sadoh, Masashi Kurosawa, Masanori Tanaka, Masanori Yamaguchi, Shinji Suzuki, Tokuhide Kitamura, Masanobu Miyao

    Applied Physics Letters   95 ( 26 )   2009.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3278596

  • Defect-free single-crystal Ge island arrays on insulator by rapid-melting-growth combined with seed-positioning technique Reviewed

    Kaoru Toko, Takashi Sakane, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao

    Applied Physics Letters   95 ( 11 )   2009.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3231925

  • Orientation-controlled Si thin films on insulating substrates by Al-induced crystallization combined with interfacial-oxide layer modulation Reviewed

    Masashi Kurosawa, Naoyuki Kawabata, Taizoh Sadoh, Masanobu Miyao

    Applied Physics Letters   95 ( 13 )   2009.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3241076

  • High-quality single-crystal Ge stripes on quartz substrate by rapid-melting-growth Reviewed

    Masanobu Miyao, Kaoru Toko, Takanori Tanaka, Taizoh Sadoh

    Applied Physics Letters   95 ( 2 )   2009.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3182795

  • Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization Reviewed

    Kaoru Toko, Isakane Nakao, Taizoh Sadoh, Takashi Noguchi, Masanobu Miyao

    Solid-State Electronics   53 ( 11 )   1159 - 1164   2009.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.sse.2009.08.002

  • Lateral liquid-phase epitaxy of Ge on insulator using Si seed for ultrahigh speed transistor Reviewed

    T. Sadoh, T. Tanaka, Y. Ohta, K. Toko, M. Miyao

    IEICE technical report   109 ( 98 )   177 - 180   2009.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Indentation-induced low-temperature solid-phase crystallization of Si 1-xGex (x=0-1) on insulator Reviewed

    Kaoru Toko, Taizoh Sadoh, Masanobu Miyao

    Applied Physics Letters   94 ( 19 )   2009.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3136857

  • Electrical injection and detection of spin-polarized electrons in silicon through an Fe3 Si/Si Schottky tunnel barrier Reviewed

    Y. Ando, K. Hamaya, K. Kasahara, Y. Kishi, K. Ueda, K. Sawano, T. Sadoh, M. Miyao

    Applied Physics Letters   94 ( 18 )   2009.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3130211

  • Magnetic properties of epitaxially grown Fe3 Si/Ge (111) layers with atomically flat heterointerfaces Reviewed

    Y. Ando, K. Hamaya, K. Kasahara, K. Ueda, Y. Nozaki, Taizoh Sadoh, Y. Maeda, Kimihide Matsuyama, M. Miyao

    Journal of Applied Physics   105 ( 7 )   2009.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3065985

  • アルミニウム誘起層交換法によるSiGe/ガラスの低温成長 Reviewed

    黒澤 昌志, 川畑 直之, 佐道 泰造, 宮尾 正信

    109 ( 20 )   19 - 23   2009.4

     More details

    Language:Japanese   Publishing type:Research paper (scientific journal)  

    Low-temperature (<550℃) Al-induced crystallization (AIC) of amorphous Si_<1-x>Ge_x (x=0-1) on glass substrate has been investigated to achieve high-speed thin-film transistors and high-efficiency thin-film solar cells. Crystal growth morphology drastically changed with Ge fraction, and layer exchange occurred heterogeneously for high Ge fractions (>50%). To solve this problem, the effects of interfacial oxide thickness on AIC growth were investigated. As a result, homogeneous layer exchange was achieved for samples with the whole Ge fractions (x=0-1) by controlling the air exposure time. These new findings will be a powerful tool to obtain high quality poly-SiGe films on glass substrates.

  • Position-Controlled Growth of SiGe Crystal Grains on Insulator by Indentation-Induced Solid-Phase Crystallization Reviewed International journal

    K. Toko, T. Sadoh, and M. Miyao

    Japanese Journal of Applied Physics   2009.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Position-controlled growth of SiGe crystal grains on insulator by indentation-induced solid-phase crystallization (Special issue Active-matrix flatpanel displays and devices: TFT technologies and FPD materials) Reviewed

    Kaoru Toko, Taizoh Sadoh, Masanobu Miyao

    Japanese Journal of Applied Physics, Part 2: Letters   48 ( 3 )   03B007 - 1〜4   2009.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Position-controlled growth of sige crystal grains on insulator by indentation-induced solid-phase crystallization Reviewed

    Kaoru Toko, Taizoh Sadoh, Masanobu Miyao

    Japanese journal of applied physics   48 ( 3 PART 3 )   2009.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.48.03B007

  • Interfacial-oxide layer controlled Al-induced crystallization of Si1-xGe[x] (x 0-1) on insulating substrate (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials) Reviewed

    Masashi Kurosawa, Yoshitaka Tsumura, Taizoh Sadoh

    Japanese Journal of Applied Physics, Part 2: Letters   48 ( 3 )   03B002 - 1〜5   2009.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Interfacial-oxide layer controlled Al-induced crystallization of Si 1-xGex (x 0-1) on insulating substrate Reviewed

    Masashi Kurosawa, Yoshitaka Tsumura, Taizoh Sadoh, Masanobu Miyao

    Japanese journal of applied physics   48 ( 3 PART 3 )   2009.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.48.03B002

  • Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si1-xGex(x 0–1) on Insulating Substrate Reviewed

    48 ( 3 )   03B002 - 03B002   2009.3

     More details

    Language:Others   Publishing type:Research paper (scientific journal)  

  • Effects of Si layer thickness on solid-phase crystallization of stacked Ge/Si/SiO2 structures (Special issue Active-matrix flatpanel displays and devices: TFT technologies and FPD materials) Reviewed

    Taizoh Sadoh, Hiroki Ohta, Masanobu Miyao

    Japanese Journal of Applied Physics, Part 2: Letters   48 ( 3 )   03B004 - 1〜3   2009.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Effects of Si layer thickness on solid-phase crystallization of stacked Ge/Si/SiO2 structures Reviewed

    Taizoh Sadoh, Hiroki Ohta, Masanobu Miyao

    Japanese journal of applied physics   48 ( 3 PART 3 )   2009.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.48.03B004

  • Effects of Si Layer Thickness on Solid-Phase Crystallization of Stacked Ge/Si/SiO2Structures Reviewed

    Taizoh Sadoh, Hiroki Ohta, Masanobu Miyao

    Japanese Journal of Applied Physics, Part 2: Letters   48 ( 3 )   03B004 - 03B004   2009.3

     More details

    Language:Others   Publishing type:Research paper (scientific journal)  

  • Effects of Si Layer Thickness on Solid-Phase Crystallization of Stacked Ge/Si/SiO2 Structures Reviewed International journal

    T. Sadoh, H. Ohta, and M. Miyao

    Japanese Journal of Applied Physics   2009.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si1-xGex (x: 0-1) on Insulating Substrate Reviewed International journal

    M.Kurosawa, Y. Tsumira, T. Sadoh, and M. Miyao

    Japanese Journal of Applied Physics   2009.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Magnetic properties of epitaxially grown Fe3Si/Ge(111) layers with atomically at heterointerfaces Reviewed International journal

    Y. Ando, K. Hamaya, K. Kasahara, K. Ueda, Y. Nozaki, T. Sadoh, Y. Maeda, K. Matsuyama, and M. Miyao

    Journal Applied Physics   2009.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Ge Fraction Dependence of Al-Induced Crystallization of SiGeat Low Temperatures Reviewed International journal

    M. Kurosawa, Y. Tsumura, T. Sadoh and M. Miyao

    Journal of the Korean Physical Society   2009.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Ge fraction dependence of Al-induced crystallization of SiGe at low temperatures Reviewed

    Masashi Kurosawa, Yoshitaka Tsumura, Taizoh Sadoh, Masanobu Miyao

    Journal of the Korean Physical Society   54 ( 1 PART 2 )   451 - 454   2009.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.3938/jkps.54.451

  • Atomically-controlled Fe3Si/Ge hybrid structures for group-IV-semiconductor spin-transistor application

    Masanobu Miyao, Yuichiro Ando, Koji Ueda, Kohei Hamaya, Yukio Nozaki, Taizoh Sadoh, Kimihide Matsuyama, Kazumasa Narumi, Yoshihito Maeda

    2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings   688 - 691   2008.12

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1109/ICSICT.2008.4734647

  • Low temperature epitaxial growth of full heusler alloy Fe2MnSi on Ge(111) substrates for spintronics application

    Koji Ueda, Yuichiro Ando, Kenji Yamamoto, Mamoru Kumano, Kohei Hamaya, Taizoh Sadoh, Kazumasa Nammi, Yoshihito Maeda, Masanobu Miyao

    3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting ECS Transactions - SiGe, Ge, and Related Compounds 3 Materials, Processing, and Devices   273 - 276   2008.12

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1149/1.2986782

  • Formalion of SiGe quasi-single crystal grain on insulator by indentation-induced solid-phase crystallization

    T. Sadoh, K. Toko, M. Miyao

    3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting ECS Transactions - SiGe, Ge, and Related Compounds 3 Materials, Processing, and Devices   219 - 222   2008.12

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1149/1.2986773

  • Enhancement of local strain in Si microstructure by oxidation induced Ge condensation

    M. Tanaka, T. Tanaka, T. Sadoh, J. Morioka, T. Kitamura, M. Miyao

    3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting ECS Transactions - SiGe, Ge, and Related Compounds 3 Materials, Processing, and Devices   189 - 192   2008.12

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1149/1.2986768

  • Characterization of Fe3Si/Si schottky contact for future spin-transistor

    Yuji Kishi, Mamoru Kumano, Koji Ueda, Taizoh Sadoh, Masanobu Miyao

    3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting ECS Transactions - SiGe, Ge, and Related Compounds 3 Materials, Processing, and Devices   277 - 280   2008.12

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1149/1.2986783

  • Comprehensive study of low temperature (<1000 °C) oxidation process in SiGe/SOI structures Reviewed International journal

    2008.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Temperature dependent epitaxial growth of ferromagnetic silicide Fe3Si on Ge substrate Reviewed

    Koji Ueda, Taizoh Sadoh, Yuichiro Ando, Takahumi Jonishi, Kazumasa Narumi, Yoshihito Maeda, Masanobu Miyao

    Thin Solid Films   517 ( 1 )   422 - 424   2008.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2008.08.110

  • Stress-relaxation mechanism in ultra-thin SiGe on insulator formed by H+ irradiation-assisted Ge condensation method Reviewed

    Masanori Tanaka, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

    Thin Solid Films   517 ( 1 )   248 - 250   2008.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2008.08.030

  • Low-temperature oriented growth in [CoPt/MgO] n multi-layer Reviewed

    Taizoh Sadoh, M. Kurosawa, M. Kimura, K. Ueda, M. Koyanagi, M. Miyao

    Thin Solid Films   517 ( 1 )   430 - 433   2008.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2008.08.057

  • Low temperature epitaxial growth of Fe3Si on Si(111) substrate through ultra-thin SiO2 films Reviewed

    Koji Ueda, Mamoru Kumano, Taizoh Sadoh, Masanobu Miyao

    Thin Solid Films   517 ( 1 )   425 - 427   2008.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2008.08.121

  • Local strain evaluation of single crystal Si pillar by micro Raman spectroscopy and photoluminescence Reviewed

    Dong Wang, Hiroshi Nakashima, Masanori Tanaka, Taizoh Sadoh, Masanobu Miyao, Jun Morioka, Tokuhide Kitamura

    Thin Solid Films   517 ( 1 )   31 - 33   2008.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2008.08.021

  • Comprehensive study of low temperature (< 1000 °C) oxidation process in SiGe/SOI structures Reviewed

    517 ( 1 )   251 - 253   2008.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Oxidation of SiGe/SOI (Ge fraction: 0-50%) structures was investigated in a wide temperature range. Different oxidation features were observed for samples oxidized in low (< 680 °C), middle (700-800 °C), and high (> 800 °C) temperature regions. Very thin SiO2 layers (< 150 nm) were formed during low (< 680 °C) temperature oxidation. Thus, the Ge fractions at the SiO2/SiGe interfaces were almost the same as the initial Ge fractions (< 50%). Therefore, the initial Ge fraction dependent enhanced oxidation was observed. On the other hand, very thick SiO2 (> 200 nm) was formed during high (> 800 °C) temperature oxidation. Thus, the oxidation rate was limited by the diffusion process of O in SiO2. Therefore, the oxidation rate did not depend on the Ge fraction. At middle temperatures, the oxidation rate does not depend on the temperature for samples with high initial Ge fractions (> 20%). This is due to that increase in oxidation rate by increasing temperature was cancelled by the retardation of oxidation due to high Ge fractions (> 50%) piled-up at the SiO2/SiGe interfaces.

    DOI: 10.1016/j.tsf.2008.08.025

  • Atomically controlled hetero-epitaxy of Fe3Si/SiGe for spintronics application Reviewed

    Masanobu Miyao, Koji Ueda, Yu ichiro Ando, Mamoru Kumano, Taizoh Sadoh, Kazumasa Narumi, Yoshihito Maeda

    Thin Solid Films   517 ( 1 )   181 - 183   2008.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2008.08.055

  • Temperature dependent epitaxial growth of ferromagnetic silicide Fe3Si on Ge substrate

    K. Ueda, T. Sadoh, Y. Ando, T. Jonishi, K. Narumi, Y. Maeda, M. Miyao

    Thin Solid Films   2008.11

     More details

    Language:English  

  • Stress-relaxation mechanism in ultra-thin SiGe on insulator formed by H+ irradiation-assisted Ge condensation method Reviewed International journal

    M. Tanaka, A. Kenjo, T. Sadoh, M. Miyao

    Thin Solid Films   2008.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Local strain evaluation of single crystal Si pillar by micro Raman spectroscopy and photoluminescence Reviewed International journal

    Dong Wang, H. Nakashima, M. Tanaka, T. Sadoh, M. Miyao, J. Morioka, T. Kitamura

    Thin Solid Films   2008.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Low temperature epitaxial growth of Fe3Si on Si(111) substrate through ultra-thin SiO2 films Reviewed International journal

    K. Ueda, M. Kumano, T. Sadoh, M. Miyao

    Thin Solid Films   2008.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Atomically controlled hetero-epitaxy of Fe3Si/SiGe for spintronics application Reviewed International journal

    M. Miyao , K. Ueda, Y. Ando, M. Kumano, T. Sadoh, K. Narumi, Y. Maeda

    Thin Solid Films   2008.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Low-temperature oriented growth in [CoPt/MgO]n multi-layer

    T. Sadoh , M. Kurosawa, M. Kimura, K. Ueda , M. Koyanagi, M. Miyao

    Thin Solid Films   2008.11

     More details

    Language:English  

  • Formation of SiGe Quasi-Single Crystal Grain on Insulator by Indentation-Induced Solid-Phase Crystallization Reviewed International journal

    T. Sadoh, K. Toko, K. Ikeda, S. Hata, M. Itakura, H. Nakashima, M. Nishida, and M.Miyao

    ECS Transactions   2008.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Epitaxial ferromagnetic Fe3Si/Si(111) structures with high-quality heterointerfaces Reviewed

    K. Hamaya, K. Ueda, Y. Kishi, Y. Ando, T. Sadoh, M. Miyao

    Applied Physics Letters   93 ( 13 )   2008.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.2996581

  • Characterization of Fe3Si/Si Schottky Contact for Future Spin-Transistor Reviewed International journal

    Y. Kishi, M. Kumano, K. Ueda, T. Sadoh, and M. Miyao

    ECS Transactions   2008.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Low Temperature Epitaxial Growth of Full Heusler Alloy Fe2MnSi on Ge(111) Substrates for Spintronics Application

    K. Ueda, Y. Ando, K. Yamamoto, M. Kumano, K. Hamaya, T. Sadoh, K. Narumi,Y. Maeda, and M. Miyao

    ECS Transactions   2008.10

     More details

    Language:English  

  • Enhancement of Local Strain in Si Microstructure by Oxidation Induced Ge Condensation Reviewed International journal

    M. Tanaka, T. Tanaka, T. Sadoh, J. Morioka, T. Kitamura, and M. Miyao

    ECS Transactions   2008.10

     More details

    Publishing type:Research paper (scientific journal)  

  • Low-Temperature Molecular Beam Epitaxy of a Ferromagnetic Full-Heusler Alloy Fe2MnSi on Ge(111) Reviewed International journal

    K.Ueda, K. Hamaya, K.Yamamoto, Y. Ando, T.Sadoh, Y.Maeda, and M.Miyao

    Appl. Phys. Lett.   2008.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • 絶縁膜上における非晶質SiGeのインデント誘起固相成長 Reviewed

    都甲 薫, 佐道 泰造, 宮尾 正信

    電気学会研究会資料. EFM, 電子材料研究会   2008 ( 24 )   31 - 34   2008.9

     More details

    Language:Japanese   Publishing type:Research paper (scientific journal)  

  • Low-temperature molecular beam epitaxy of a ferromagnetic full-Heusler alloy Fe2MnSi on Ge(111) Reviewed

    K. Ueda, K. Hamaya, K. Yamamoto, Y. Ando, T. Sadoh, Y. Maeda, M. Miyao

    Applied Physics Letters   93 ( 11 )   2008.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.2977866

  • 縁膜上における非晶質SiGeのインデント誘起固相成長 Reviewed

    都甲 薫,佐道泰造,宮尾正信

    電気学会・電子材料研究会資料   2008.9

     More details

    Language:Japanese  

  • Epitaxial Ferromagnetic Fe3Si/Si(111) Structures with High-Quality Heterointerfaces Reviewed International journal

    K.Hamaya, K.Ueda, Y. Kishi, Y.Ando, T.Sadoh, and M.Miyao

    Appl. Phys. Lett.   2008.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Low-temperature solid-phase crystallization of amorphous SiGe films on glass by imprint technique Reviewed

    Kaoru Toko, Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Tanemasa Asano, Masanobu Miyao

    Solid-State Electronics   52 ( 8 )   1221 - 1224   2008.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.sse.2008.05.009

  • Influence of Substrate Orientation on Low-Temperature Epitaxial Growth of Ferromagnetic Silicide Fe3Si on Si Reviewed International journal

    K. Ueda, R. Kizuka, H. Takeuchi, A. Kenjo, T. Sadoh,.and M. Miyao

    Thin Solid Films   2008.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Low temperature formation of multi-layered structures of ferromagnetic silicide Fe 3 Si and Ge Reviewed

    Koji Ueda, Yuichiro Ando, Mamoru Kumano, Taizoh Sadoh, Yoshihito Maeda, Masanobu Miyao

    Applied Surface Science   254 ( 19 )   6215 - 6217   2008.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.apsusc.2008.02.139

  • Influences of Si pillar geometry on SiN-stressor induced local strain Reviewed

    Masanori Tanaka, Taizoh Sadoh, Jun Morioka, Tokuhide Kitamura, Masanobu Miyao

    Applied Surface Science   254 ( 19 )   6226 - 6228   2008.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.apsusc.2008.02.146

  • Low Temperature Formation of Multi-Layered Structures of Ferromagnetic Silicide Fe3Si and Ge Reviewed International journal

    K. Ueda, Y. Ando, M. Kumano, T. Sadoh,Y. Maeda and M. Miyao

    Applied Surface Science   2008.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Influences of Si Pillar Geometry on SiN-Stressor Induced Local Strain Reviewed International journal

    M. Tanaka, T. Sadoh, J. Morioka, T. Kitamura and M. Miyao

    Applied Surface Science   2008.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Low Temperature Formation of Multi-Layered Structures of Ferromagnetic Silicide Fe3Si and Ge Reviewed International journal

    K. Ueda, Y. Ando, M. Kumano, T. Sadoh,Y. Maeda and M. Miyao

    Applied Surface Science   2008.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Low Temperature Hetero-Epitaxy of Ferromagnetic Silicide on Ge Substrates for Spin-Transistor Application Reviewed International journal

    Y. Ando, K. Ueda, M. Kumano, T. Sadoh, K. Narumi, Y. Maeda, and M. Miyao

    IEICE Transaction on Electronics   2008.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Low temperature hetero-epitaxy of ferromagnetic suicide on ge substrates for spin-transistor application Reviewed

    Yu Ichiro Ando, Koji Uedat, Mamoru Kumano, Taizoh Sadoh, Kazumasa Narumi, Yoshihito Maeda, Masanobu Miyao

    IEICE Transactions on Electronics   E91-C ( 5 )   708 - 711   2008.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1093/ietele/e91-c.5.708

  • Low Temperature Hetero-Epitaxy of Ferromagnetic Silicide on Ge Substrates for Spin-Transistor Application Reviewed

    Yu-ichiro Ando, Koji Ueda, Mamoru Kumano, Taizoh Sadoh, Kazumasa Narumi, Yoshihito Maeda, Masanobu Miyao

    IEICE Transactions on Electronics   91 ( 5 )   708 - 711   2008.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1093/ietele/e91-c.5.708

  • 次世代TFTに向けたa-Ge/石英の低温固相成長 Reviewed

    中尾 勇兼, 都甲 薫, 野口 隆, 佐道泰造

    電子情報通信学会 信学技報   2008.4

     More details

    Language:Japanese  

  • Electric field assisted low-temperature growth of SiGe on insulating films for future TFT

    Masanobu Miyao, Hiroshi Kanno, Taizoh Sadoh

    6th International Conference on Thin Film Physics and Applications, TFPA 2007 Sixth International Conference on Thin Film Physics and Applications   6984   2008.4

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1117/12.792280

  • 金属触媒誘起固相成長法による多結晶Ge/絶縁膜の低温形成 ~電界印加効果、触媒種効果~ Reviewed

    萩原貴嗣,都甲 薫,佐道泰造

    電子情報通信学会 信学技報   2008.4

     More details

    Language:Japanese  

  • Abnormal oxidation characteristics of SiGe/SOI structures depending on piled-up Ge fraction at SiO2/SiGe interface Reviewed International journal

    M.Tanaka, T. Ohka, T. Sadoh, and M. Miyao

    J. Appl. Phys.   2008.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Nucleation-controlled metal-induced lateral crystallization of amorphous Si[1-x]Ge[x] with whole Ge fraction on insulator (Special issue Active-matrix flatpanel displays and devices: TFT technologies and related materials) Reviewed

    Taizoh Sadoh, Kaoru Toko, Hiroshi Kanno, Shunji Masumori, Masaru Itakura, Noriyuki Kuwano, Masanobu Miyao

    Japanese Journal of Applied Physics, Part 2: Letters   47 ( 3 )   1876 - 1879   2008.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Nucleation-controlled metal-induced lateral crystallization of amorphous Si1-xGex with whole Ge fraction on insulator Reviewed

    Taizoh Sadoh, Kaoru Toko, Hiroshi Kanno, Shunji Masumori, Masaru Itakura, Noriyuki Kuwano, Masanobu Miyao

    Japanese journal of applied physics   47 ( 3 PART 2 )   1876 - 1879   2008.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.47.1876

  • Abnormal oxidation characteristics of SiGeSi -on-insulator structures depending on piled-up Ge fraction at Si O2 SiGe interface Reviewed

    Masanori Tanaka, Tatsuo Ohka, Taizoh Sadoh, Masanobu Miyao

    Journal of Applied Physics   103 ( 5 )   2008.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.2894583

  • Site preference of atoms in heusler alloys Fe3Si and Fe 2MnSi grown on ge(111) toward realization of Ge channel spin transistors

    Yoshihito Maeda, Yusuke Hiraiwa, Kazumasa Narumi, Atsuo Kawasuso, Yosikazu Terai, Yuichiro Ando, Koji Ueda, Taizoh Sadoh, Kohei Hamaya, Masanobu Miyao

    New Materials with High Spin Polarization and Their Applications Materials Research Society Symposium Proceedings - New Materials with High Spin Polarization and Their Applications   13 - 18   2008

     More details

    Language:English   Publishing type:Research paper (other academic)  

  • Comparative study of Al-induced crystallization for poly-Si and Ge on insulating film

    Y. Tsumura, I. Nakao, H. Kanno, A. Kenjo, T. Sadoh, M. Miyao

    5th International Symposium on ULSI Process Integration - 212th ECS Meeting ECS Transactions - 5th International Symposium on ULSI Process Integration   395 - 400   2007.12

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1149/1.2778396

  • Low-temperature epitaxial growth of [Fe3Si/SiGe]n (n=1-2) multi-layered structures for spintronics application

    T. Sadoh, K. Ueda, Y. Ando, M. Kumano, K. Narumi, Y. Maeda, M. Miyao

    5th International Symposium on ULSI Process Integration - 212th ECS Meeting ECS Transactions - 5th International Symposium on ULSI Process Integration   473 - 479   2007.12

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1149/1.2778404

  • High-performance poly-Ge thin-film transistor with NiGe Schottky source/drain

    Taizoh Sadoh, H. Kamizuru, A. Kenjo, M. Miyao

    6th Pacific Rim International Conference on Advanced Materials and Processing, PRICM 6 Selected, peer reviewed papers from The Sixth Pacific Rim International Conference on Advanced Materials and Processing, PRICM 6   1181 - 1184   2007.12

     More details

    Language:English   Publishing type:Research paper (other academic)  

  • Formation of Fe3Si/Ge/Fe3Si multi-layer by double heteroepitaxy on high quality Fe3Si/Ge substrate for spintronics application

    Koji Ueda, Yuichiro Ando, Mamoru Kumano, Taizoh Sadoh, Yoshihito Maeda, Masanobu Miyao

    5th International Symposium on ULSI Process Integration - 212th ECS Meeting ECS Transactions - 5th International Symposium on ULSI Process Integration   487 - 491   2007.12

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1149/1.2778406

  • Effect of Fe/Si ratio on epitaxial growth of Fe3Si on Ge substrate

    M. Kumano, Y. Ando, K. Ueda, T. Sadoh, K. Narumi, Y. Maeda, M. Miyao

    5th International Symposium on ULSI Process Integration - 212th ECS Meeting ECS Transactions - 5th International Symposium on ULSI Process Integration   481 - 485   2007.12

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1149/1.2778405

  • Axial orientation of molecular-beam-epitaxy-grown Fe3 SiGe hybrid structures and its degradation Reviewed

    Yoshihito Maeda, Takafumi Jonishi, Kazumasa Narumi, Yu Ichiro Ando, Koji Ueda, Mamoru Kumano, Taizoh Sadoh, Masanobu Miyao

    Applied Physics Letters   91 ( 17 )   2007.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.2801705

  • Comparative Study of Al-Induced Crystallization for Poly-Si and Ge on Insulating Film Reviewed International journal

    Y. Tsumura, I. Nakao, H. Kanno, A. Kenjo, T. Sadoh, and M. Miyao

    ECS Transactions   2007.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Axial orientation of molecular-beam-epitaxy-grown Fe3Si/Ge hybrid structures and its degradation Reviewed International journal

    Yoshihito Maeda, Takafumi Jonishi, Kazumasa Narumi, Yu-ichiro Ando, Koji Ueda, Mamoru Kumano, Taizoh Sadoh, and Masanobu Miyao

    Appl. Phys. Lett.   2007.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Formation of Fe3Si/Ge/Fe3Si Multi-Layer by Double Heteroepitaxy on High Quality Fe3Si/Ge Substrate for Spintronics Application Reviewed International journal

    K. Ueda, Y. Ando, M. Kumano, T. Sadoh, Y. Maeda and M.Miyao

    ECS Transactions   2007.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Effect of Fe/Si Ratio on Epitaxial Growth of Fe3Si on Ge Substrate Reviewed International journal

    M. Kumano, Y. Ando, K. Ueda, T. Sadoh, K. Narumi, Y. Maeda, M. Miyao

    ECS Transactions   2007.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Editorial Reviewed

    Yoshihito Maeda, Kevin P. Homewood, Taizoh Sadoh, Yoshikazu Terai, Kenji Yamaguchi, Kensuke Akiyama

    Thin Solid Films   515 ( 22 )   8101   2007.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2007.02.019

  • Ni-imprint induced solid-phase crystallization in Si1-xGe x (x 0-1) on insulator Reviewed

    Kaoru Toko, Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Tanemasa Asano, Masanobu Miyao

    Applied Physics Letters   91 ( 4 )   2007.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.2764447

  • Influence of substrate orientation on low-temperature epitaxial growth of ferromagnetic silicide Fe3Si on Si Reviewed

    Koji Ueda, Ryo Kizuka, Hisashi Takeuchi, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

    Thin Solid Films   515 ( 22 )   8250 - 8253   2007.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2007.02.052

  • Ni-Imprint Induced Solid-Phase Crystallization in Si1-xGex(x:0-1) on Insulator Reviewed International journal

    K. Toko, H. Kanno, A. Kenjo, T. Sadoh, T. Asano, and M. Miyao

    Appliedd Physics Letters   2007.7

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Low Temperature Hetero-Epitaxy of Ferromagnetic Silicide on Ge Substrates for Spin-Transistor Application Reviewed

    Y. Ando, K. Ueda, M. Kumano, T. Sadoh, K. Narumi, Y. Maeda, and M. Miyao

    2007.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Ge-channel thin-film transistor with schottky Source/drain fabricated by low-temperature processing Reviewed

    Taizoh Sadoh, Hayato Kamizuru, Atsushi Kenjo, Masanobu Miyao

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   46 ( 3 B )   1250 - 1253   2007.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.46.1250

  • Recent Progress of SiGe Heterostructure Technologies for Novel Devices : Reviewed International journal

    M. Miyao, H. Kanno, and T. Sadoh

    ECS Transactions   2006.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Low temperature crystallization of a-SiGe on insulating films for thin film transistor application Reviewed

    Masanobu Miyao, Hiroshi Kanno, Isao Tsunoda, Taizoh Sadoh

    SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting ECS Transactions   3 ( 7 )   613 - 626   2006.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/1.2355858

  • Atomically controlled molecular beam epitaxy of ferromagnetic silicide Fe3Si on Ge Reviewed

    T. Sadoh, M. Kumano, R. Kizuka, K. Ueda, A. Kenjo, M. Miyao

    Applied Physics Letters   89 ( 18 )   2006.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.2378399

  • Temperature dependent metal-induced lateral crystallization of amorphous SiGe on insulating substrate Reviewed

    Hiroshi Kanno, Kaoru Toko, Taizoh Sadoh, Masanobu Miyao

    Applied Physics Letters   89 ( 18 )   2006.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.2374849

  • Low-temperature formation (<500 °c) of poly-Ge thin-film transistor with NiGe Schottky source/drain Reviewed

    89 ( 19 )   2006.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Poly-Ge thin-film transistors (TFTs) with Schottky source/drain (S/D) contacts were fabricated on glass by low-temperature (<500 °C) processing. First, the annealing characteristics of Ni/crystal-Ge stacked structures were examined. The results indicated that NiGen-Ge Schottky contacts (φ Bn =0.51 eV, n=1) with flat interfaces and low reverse leakage current [(2-5) × 10-2 A cm2] could be obtained by choosing an appropriate annealing temperature (200-300 °C). Based on this result, p -channel TFTs were fabricated with poly-Ge formed on glass by solid-phase crystallization at 500 °C. TFTs showed relatively high hole mobility (about 140 cm2 V s) with very low S/D parasitic resistance and no kink effect. The potential capability of the proposed devices for high-performance TFTs was demonstrated.

    DOI: 10.1063/1.2387136

  • Temperature dependent metal-induced lateral crystallization of amorphous SiGe on insulating substrate Reviewed International journal

    H. Kanno, K. Toko, T. Sadoh, and M. Miyao

    Appl. Phys. Lett.   2006.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Stress-Relaxation Process during Post-Annealing in SGOI Formed by H^+ Irradiation and Oxidation-Induced Ge Condensation Reviewed

    Masanori Tanaka, Taizoh Sadoh, Koji Matsumoto, Toyotsugu Enokida, Masanobu Miyao

    Extended abstracts of the ... Conference on Solid State Devices and Materials   2006   444 - 445   2006.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Directional Growth of Si Nanowires on Insulating Films by Electric-Field-Assisted Metal-Induced Lateral Crystallization : Reviewed International journal

    H. Kanno, A. Kenjo, T. Sadoh, and M. Miyao

    Mat. Res. Soc. Symp. Proc   2006.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Directional growth of Si nanowires on insulating films by electric-field-assisted metal-induced lateral crystallization

    Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

    2005 MRS Fall Meeting Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications   257 - 262   2006.8

     More details

    Language:English   Publishing type:Research paper (other academic)  

  • Recent progress of SiGe heterostructure technologies for novel devices

    Masanobu Miyao, Hiroshi Kanno, Taizoh Sadoh

    2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society Dielectrics for Nanosystems II Materials Science, Processing, Reliability, and Manufacturing   2   165 - 179   2006.7

     More details

    Language:English   Publishing type:Research paper (other academic)  

  • Electric field-dependent Ni-mediated lateral crystallization of a-Si on SiO2 : ( (Jun.,.2006)) Reviewed International journal

    H. Kanno, A. Kenjo, T. Sadoh and M. Miyao

    Thin Solid Films   2006.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Thickness-dependent stress-relaxation in thin SGOI structures and its improvement Reviewed

    Masanori Tanaka, Isao Tsunoda, Taizoh Sadoh, Toyotsugu Enokida, Masaharu Ninomiya, Masahiko Nakamae, Masanobu Miyao

    Thin Solid Films   508 ( 1-2 )   247 - 250   2006.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2005.07.316

  • Morphological change of Co-nanodot on SiO2 by thermal treatment Reviewed

    Koji Ueda, Taizoh Sadoh, Atsushi Kenjo, Fumiya Shoji, Kaoru Sato, Hiroyuki Kurino, Mitsumasa Koyanagi, Masanobu Miyao

    Thin Solid Films   508 ( 1-2 )   178 - 181   2006.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2005.10.005

  • Electric field-dependent Ni-mediated lateral crystallization of a-Si on SiO2 Reviewed

    Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

    Thin Solid Films   508 ( 1-2 )   40 - 43   2006.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2005.07.315

  • Characterization of metal-induced lateral crystallization of amorphous SiGe on insulating film Reviewed

    Masaru Itakura, Syunji Masumori, Tomohisa Ohta, Yoshitsugu Tomokiyo, Noriyuki Kuwano, Hiroshi Kanno, Taizoh Sadoh, Masanobu Miyao

    Thin Solid Films   508 ( 1-2 )   57 - 60   2006.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2005.06.102

  • Au-induced lateral crystallization of a-Si1-xGex (x 0-1) at low temperature Reviewed

    Tomohisa Aoki, Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

    Thin Solid Films   508 ( 1-2 )   44 - 47   2006.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2005.07.317

  • Morphological change of Co-nanodot on SiO2 by thermal treatment Reviewed International journal

    K. Ueda, T. Sadoh, A. Kenjo, F. Shoji, H. Kurino, M. Koyanagi, and M. Miyao

    Thin Solid Films   2006.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Thickness Dependent Stress-Relaxation in Thin SGOI Structures and Its Improvement Reviewed International journal

    M.Tanaka, I. Tsunoda, T. Sadoh, T. Enokida, M. Ninomiya, M. Nakamae and M. Miyao

    Thin Solid Films   2006.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Characterization of metal-induced lateral crystallization of amorphous SiGe on insulating film Reviewed International journal

    : M. Itakura, S. Masumori, T. Ohta, Y. Tomokiyo, N. Kuwano, H. Kanno, T. Sadoh and M. Miyao

    Thin Solid Films   2006.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Au-induced Lateral Crystallization of a-Si1-xGex(x: 0-1) at low-temperature Reviewed International journal

    T. Aoki, H. Kanno, A. Kenjo, T. Sadoh, and M. Miyao

    Thin Solid Films   2006.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Electric-Field-Assisted Metal-Induced Lateral Crystallization of Amorphous SiGe on SiO2 Reviewed International journal

    H. Kanno, A. Kenjo, T. Sadoh and M. Miyao

    Jpn. J. Appl. Phys.   2006.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Suppression of floating body effects in polycrystalline silicon thin-film transistor by schottky source/drain structure Reviewed

    Taizoh Sadoh, Yasuhiro Ohyama, Atsushi Kenjo, Keiji Ikeda, Yoshimi Yamashita, Masanobu Miyao

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   45 ( 5 B )   4370 - 4373   2006.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.45.4370

  • Suppression of Floating Body Effects in Polycrystalline Silicon Thin-Film Transistor by Schottky Source/Drain Structure (Special Issue Active-Matrix Liquid-Crystal Displays--TFT Technologies and Related Materials) Reviewed

    T. Sadoh, Yasuhiro Ohyama, Atsushi Kenjo, Keiji Ikeda, Yoshimi Yamashita, Masanobu Miyao

    Japanese Journal of Applied Physics, Part 2: Letters   45 ( 5 )   4370 - 4373   2006.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Electric-field-assisted metal-induced lateral crystallization of amorphous SiGe on SiO2 Reviewed

    Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   45 ( 5 B )   4351 - 4354   2006.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.45.4351

  • Electric-Field-Assisted Metal-Induced Lateral Crystallization of Amorphous SiGe on SiO2 (Special Issue Active-Matrix Liquid-Crystal Displays--TFT Technologies and Related Materials) Reviewed

    H. Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

    Japanese Journal of Applied Physics, Part 2: Letters   45 ( 5 )   4351 - 4354   2006.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge-condensation process combined with H+ irradiation and post-annealing Reviewed International journal

    M. Miyao, M. Tanaka, I. Tsunoda, T. Sadoh, T. Enokida, H. Hagino, M. Ninomiya and M. Nakamae

    Appl. Phys. Lett.   2006.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Improved oxidation-induced Ge condensation technique using H+ implantation and post annealing for highly stress-relaxed ultrathin SiGe on insulator Reviewed

    Masanori Tanaka, Isao Tsunoda, Taizoh Sadoh, Toyotsugu Enokida, Masaharu Ninomiya, Masahiko Nakamae, Masanobu Miyao

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   45 ( 4 B )   3147 - 3149   2006.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.45.3147

  • Improved Oxidation-Induced Ge Condensation Technique Using H〔+〕 Implantation and Post Annealing for Highly Stress-Relaxed Ultrathin SiGe on Insulator (Special Issue Solid State Devices & Materials) Reviewed

    45 ( 4 )   3147 - 3149   2006.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H+ irradiation and postannealing Reviewed

    Masanobu Miyao, Masanori Tanaka, Isao Tsunoda, Taizoh Sadoh, Toyotsugu Enokida, Hiroyasu Hagino, Masaharu Ninomiya, Masahiko Nakamae

    Applied Physics Letters   88 ( 14 )   2006.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.2192644

  • Epitaxial growth of ferromagnetic silicide Fe3Si on Si(111) substrate Reviewed

    Taizoh Sadoh, Hisashi Takeuchl, Koji Ueda, Atsushi Kenjo, Masanobu Miyao

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   45 ( 4 B )   3598 - 3600   2006.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.45.3598

  • Epitaxial Growth of Ferromagnetic Silicide Fe3Si on Si(111) Substrate (Special Issue Solid State Devices & Materials) Reviewed

    Taizoh Sadoh, Hisashi Takeuchi, Koji Ueda, Atsushi Kenjo, Masanobu Miyao

    Japanese Journal of Applied Physics, Part 2: Letters   45 ( 4 )   3598 - 3600   2006.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Improved Oxidation-Induced Ge Condensation Technique by Using H+ Irradiation and Post-Annealing for Highly Stress-Relaxed Ultrathin SGOI : Reviewed International journal

    M. Tanaka, I. Tsunoda, T. Sadoh, T. Enokida, M. Ninomiya, M. Nakamae and M. Miyao

    Jpn. J. Appl. Phys.   2006.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Epitaxial Growth of Ferromagnetic Silicide Fe3Si on Si (111) Substrate Reviewed International journal

    T. Sadoh, H. Takeuchi, K. Ueda, A. Kenjo, and M. Miyao

    Jpn. J. Appl. Phys.   2006.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Low-Temperature Formation of Poly-Si1-xGex (0<x<1) Films by Ni-Induced Lateral Crystallization for Advanced TFT Reviewed

    Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

    IEEJ Transactions on Electronics, Information and Systems   126 ( 9 )   1073 - 1078   2006.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1541/ieejeiss.126.1073

  • Epitaxial Growth of Ferromagnetic Silicide Fe_3Si on Si (111) Substrate Reviewed

    T. Sadoh, H. Takeuchi, K. Ueda, A. Kenjo, M. Miyao

    Extended abstracts of the ... Conference on Solid State Devices and Materials   2005   374 - 375   2005.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Pulsed laser crystallization of silicon-germanium films Reviewed

    T. Sameshima, H. Watakabe, H. Kanno, Taizoh Sadoh, M. Miyao

    International Conference on Polycrystalline Semiconductors-Materials, Technologies, Device Applications Thin Solid Films   487 ( 1-2 )   67 - 71   2005.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2005.01.037

  • Magnetic and Microstructural Properties of FePt L10 Nanoparticle Films Fabricated by Self-Assembled Deposition Method Reviewed

    J. C. Bea, C.-K. Yin, M. Nishijima, T. Fukushima, T. Sadoh, M. Miyao, M. Koyanagi

    Extended abstracts of the ... Conference on Solid State Devices and Materials   2005   436 - 437   2005.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Improved oxidation-induced Ge condensation technique by using H^+ irradiation and post-annealing for highly stress-relaxed ultrathin SGOI Reviewed

    Masanori Ikishima, Isao Tsunoda, Taizoh Sadoh, Toyotsugu Enokida, Masaharu Ninomiya, Masahiko Nakamae, Masanobu Miyao

    Extended abstracts of the ... Conference on Solid State Devices and Materials   2005   866 - 867   2005.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Ge fraction dependent improved thermal stability of in situ doped boron in polycrystalline Si 1-xGe x (0≤x≤0.5) films on SiON Reviewed

    97 ( 5 )   2005.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Postannealing characteristics of in situ doped B atoms in poly- Si1-x Gex (x≤0.5) films on SiON have been investigated. Supersaturated electrically active B (2× 1020 cm-3) is obtained for as-chemical vapor deposition samples, and their thermal stability is significantly improved by increasing Ge fraction, e.g., the stability for poly- Si0.6 Ge0.4 is ten times as high as that for poly-Si at 700-800°C. Such a Ge induced improvement will be a powerful tool to achieve poly-SiGe gate electrode for the next generation ultralarge scale integrated circuits. In addition, the deactivation process of electrically active B has been analyzed. Results indicated that deactivation processes consist of fast and slow processes. The former is due to movement of B atoms from substitutional to interstitial sites, which is enhanced by a local strain induced by the difference in atomic radii between Si and B atoms. The slow process was due to trapping of B at grain boundaries during grain growth. The two-state model based on the local strain compensation by Ge doping is proposed, which can well explain the Ge dependent thermal stability of electrically active B atoms.

    DOI: 10.1063/1.1854731

  • Enhanced stress relaxation in ultrathin SiGe-on-insulator by H+ -implantation-assisted oxidation Reviewed

    T. Sadoh, R. Matsuura, M. Miyao, M. Ninomiya, M. Nakamae, T. Enokida

    Applied Physics Letters   86 ( 21 )   1 - 13   2005.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.1935028

  • Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator Reviewed

    Taizoh Sadoh, Ryo Matsuura, Masaharu Ninomiya, Masahiko Nakamae, Toyotsugu Enokida, Hiroyasu Hagino, Masanobu Miyao

    Japanese Journal of Applied Physics, Part 2: Letters   44 ( 4 )   2357 - 2360   2005.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Low-temperature formation of poly-Si1-xGex (x 0-1) on SiO2 by Au-mediated lateral crystallization Reviewed

    Hiroshi Kanno, Tomohisa Aoki, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   44 ( 4 B )   2405 - 2408   2005.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.44.2405

  • Low-Temperature Formation of Poly-Si_<1-x>Ge_x (x:0-1) on SiO_2 by Au-Mediated Lateral Crystallization Reviewed

    Hiroshi Kanno, Tomohisa Aoki, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

    Japanese Journal of Applied Physics, Part 2: Letters   44 ( 4 )   2405 - 2408   2005.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Improvement of oxidation-induced Ge condensation method by H+ implantation and two-step annealing for highly stress-relaxed SiGe-on-insulator Reviewed

    Taizoh Sadoh, Ryo Matsuura, Masaharu Ninomiya, Masahiko Nakamae, Toyotsugu Enokida, Hiroyasu Hagino, Masanobu Miyao

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   44 ( 4 B )   2357 - 2360   2005.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.44.2357

  • 400 °c Formation of poly-SiGe on SiO2 by Au-induced lateral crystallization Reviewed

    8 ( 1-3 SPEC. ISS. )   79 - 82   2005.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Au-induced low-temperature (400 °C) crystallization of amorphous-Si1-xGex (x: 0-1) thin films on SiO2 has been investigated. Although the growth velocity decreased with increasing Ge fraction, growth velocity exceeding 20 μm/h was obtained in all Ge fractions. As a result, strain-free poly-Si1-xGex with large areas (>20 μm) were obtained at a low temperature (400 °C). These new polycrystalline SiGe films on insulator could be used for advanced system in display and three-dimensional ULSI.

    DOI: 10.1016/j.mssp.2004.09.060

  • H+ implantation-enhanced stress relaxation in c-Si 1-xGex on SiO2 during oxidation-induced Ge condensation process Reviewed

    T. Sadoh, R. Matsuura, M. Ninomiya, M. Nakamae, T. Enokida, H. Hagino, M. Miyao

    Materials Science in Semiconductor Processing   8 ( 1-3 SPEC. ISS. )   167 - 170   2005.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.mssp.2004.09.043

  • Ge-enhanced MILC velocity in a-Ge/a-Si/SiO2 layered structure Reviewed

    Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

    Materials Science in Semiconductor Processing   8 ( 1-3 SPEC. ISS. )   83 - 88   2005.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.mssp.2004.09.036

  • Ion-beam enhanced stress-relaxation of SiGe on SiO2

    M. Tanaka, T. Sadoh, M. Ninomiya, M. Nakamae, T. Enokida, M. Miyao

    2005 MRS Fall Meeting Growth, Modification and Analysis by Ion Beams at the Nanoscale   50 - 54   2005.1

     More details

    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1557/proc-0908-oo05-21

  • Improvement of Oxidation-Induced Ge Condensation Method by H+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator Reviewed

    Taizoh Sadoh, Ryo Matsuura, Masaharu Ninomiya, Masahiko Nakamae, Toyotsugu Enokida, Hiroyasu Hagino, Masanobu Miyao

    Japanese Journal of Applied Physics, Part 2: Letters   44 ( 4 )   2357 - 2360   2005

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.44.2357

  • Formation of polycrystalline-silicon-germanium films by pulsed laser-induced rapid annealing Reviewed

    Hajime Watakabe, Toshiyuki Sameshima, Hiroshi Kanno, Taizoh Sadoh, Masanobu Miyao

    Fifth International Symposium on Laser Precision Microfabrication Proceedings of SPIE - The International Society for Optical Engineering   5662   428 - 431   2004.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1117/12.596398

  • Enhanced crystal nucleation in a-Si on SiO2 by local Ge doping Reviewed

    T. Sadoh, K. Nagatomo, I. Tsunoda, A. Kenjo, T. Enokida, M. Miyao

    Thin Solid Films   464-465   99 - 102   2004.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2004.06.010

  • Strain in β-FeSi 2 modulated by Ge segregation in solid-phase growth of [a-Si/a-FeSiGe] n stacked structure Reviewed

    237 ( 1-4 )   146 - 149   2004.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Solid-phase growth of the [a-Si/a-FeSiGe] n (n: 1, 2, 4; total thickness: 500nm) stacked structure has been investigated. After annealing at 700°C, the [a-SiGe/β-FeSi 2 (Ge)] n stacked structures were formed. From the analysis of the X-ray diffraction spectra, it was found that β-FeSi 2 (Ge) was strained by 0.4-0.5% for n = 1. With increasing n, the strains decreased, which was due to segregation of Ge atoms from the a-FeSiGe layers to the a-Si layers. After annealing at 800°C, agglomeration of β-FeSi 2 occurred and Ge atoms vanished completely from the β-FeSi 2 lattice. Thus, nanocrystals of relaxed β-FeSi 2 and c-Si 0.7 Ge 0.3 were formed. These new structures can be useful for formation of opto-electrical devices.

    DOI: 10.1016/S0169-4332(04)01007-4

  • Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SGOI Reviewed

    Taizoh Sadoh, Ryo Matsuura, M. Ninomiya, M. Nakamae, T. Enokida, H. Hagino, M. Miyao

    Extended abstracts of the ... Conference on Solid State Devices and Materials   2004   780 - 781   2004.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Low-Temperature Formation of Poly-Si_<1-x>Ge_x (x:0-1) on SiO_2 by Au-Mediated Lateral Crystallization Reviewed

    Hiroshi Kanno, Tomohisa Aoki, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

    Extended abstracts of the ... Conference on Solid State Devices and Materials   2004   516 - 517   2004.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Formation of SiGe/β-FeSi2 superstructures from amorphous Si/FeSiGe layers Reviewed

    461 ( 1 )   77 - 80   2004.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Growth of SiGe/β-FeSi2 superstructures by annealing of a-Si/a-FeSiGe layered structures was investigated for control of the strains in β-FeSi2 by Ge doping. The [a-SiGe/β-FeSi 2(Ge)]n multi-layered structures were formed after annealing at 700°C. From the analysis of the X-ray diffraction (XRD) spectra, it was found that β-FeSi2(Ge) was strained by 0.4-0.5% for the sample with n=1. The strains decreased with increasing n, which was due to that the segregation of the Ge atoms from the a-Fe0.4Si 0.5Ge0.1 layers to the a-Si layers became large with increasing n. After annealing at 800°C, agglomeration of β-FeSi 2 occurred, and nanocrystals of relaxed β-FeSi2 and c-Si0.7Ge0.3 were formed. These demonstrate that the SiGe/β-FeSi2 superstructures were formed by the Ge segregation. These new structures are useful for formation of opto-electrical devices.

    DOI: 10.1016/j.tsf.2004.02.068

  • Thin Solid Films Preface Reviewed

    Yoshihito Y. Maeda, Kevin P. Homewood, Takashi Suemasu, Taizoh Sadoh, Haruhiko Udono, Yamaguchi Kenji

    Proceedings of Symposium on Semiconducting Silicides Thin Solid Films   461 ( 1 )   2004.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2004.02.048

  • Solid-phase crystallization of β-FeSi2 thin film in Fe/Si structure Reviewed

    461 ( 1 )   68 - 71   2004.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Dependence of solid-phase growth of β-FeSi2 thin films on the crystal orientation of Si substrates has been investigated by using a-Fe (thickness: 20 nm)/c-Si(100), (110) and (111) stacked structures. X-ray diffraction (XRD) measurements suggested that the substrate orientation dependence of the formation rate of β-FeSi2 was as follows: (100)>(111)>(110). This dependence can be explained on the basis of the lattice mismatch between β-FeSi2 and Si substrates, i.e., the lattice mismatch between β-FeSi2(100) and Si(100), β-FeSi2(110) or (101) and Si(111), and β-FeSi 2(010) or (001) and Si(110) of 1.4-2.0%, 5.3-5.5% and 9.2%, respectively. The substrate orientation dependence of solid-phase growth becomes relatively remarkable for very thin films.

    DOI: 10.1016/j.tsf.2004.02.065

  • Modified metal-induced lateral crystallization using amorphous Ge/Si layered structure Reviewed

    Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

    Applied Physics Letters   85 ( 6 )   899 - 901   2004.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.1780595

  • Impurity conduction in ion beam synthesized β-FeSi2/Si Reviewed

    461 ( 1 )   198 - 201   2004.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Carrier transport in ion-beam synthesized (IBS) β-FeSi2 was investigated by using Hall effect measurement at low temperatures (15-300 K). The measurement showed p-type conduction in the temperature range of 15-300 K. The Hall coefficient increased with increasing temperature up to 25 K, and then it decreased, which suggested the two carrier conduction, i.e., the impurity conduction, as well as the conduction in the valence band, play an important role in the carrier transport. Based on the two carrier model, the hole concentration and mobility for the impurity conduction at 25 K were evaluated to be 9.9×1017 cm-3 and 0.85 cm2 V -1 s-1, respectively, which suggested that the acceptors were isolated and did not form the impurity band at the impurity concentration of 9.9×1017 cm-3. Thus, the threshold concentration for the impurity band formation was more than three orders of magnitude higher than that for GaAs (2×1016 cm-3), which could be explained on the basis of the Mott criterion.

    DOI: 10.1016/j.tsf.2004.02.071

  • Electrical and structural properties of poly-SiGe film formed by pulsed-laser annealing Reviewed

    H. Watakabe, T. Sameshima, H. Kanno, T. Sadoh, M. Miyao

    Journal of Applied Physics   95 ( 11 I )   6457 - 6461   2004.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.1707216

  • Enhanced metal-induced lateral crystallization in amorphous Ge/Si/SiO 2 layered structure Reviewed

    Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   43 ( 4 B )   1852 - 1855   2004.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.43.1852

  • Formation of β-FeSi2-xGex by Ge-segregation-controlled solid-phase growth of [a-Si/a-FeSiGe]n multilayered structure Reviewed

    43 ( 4 B )   1879 - 1881   2004.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    The solid-phase growth of [a-Si/a-Fe0.4Si0.5Ge 0.1]n (n = 1, 2, 4; total thickness: 500 nm) multilayered structures has been investigated. After annealing at 700°C, [a-SiGe/polycrystalline β-FeSi2-xGex]n (x = 0.5, 0.4, 0.2 for n = 1, 2, 4, respectively) multilayered structures were formed. From the analysis of X-ray diffraction spectra, it was found that the lattice constants of β-FeSi1.5Ge0.5 changed from those of relaxed β-FeSi2 by 0.4-0.5%. The change decreased with increasing n, which was due to the segregation of Ge atoms from the a-Fe 0.4Si0.5Ge0.1 layers to the a-Si layers becoming larger with increasing n. After annealing at 800°C, Ge atoms were completely swept out from the β-FeSi2-xGex lattice. In addition, the agglomeration of βFeSi2 occurred, and nanocrystals of relaxed β-FeSi2 and c-Si0.7Ge 0.3 were formed. This technique for the formation of βFeSi 2-xGex is expected to be useful for energy gap modulation for advanced optoelectrical devices.

    DOI: 10.1143/JJAP.43.1879

  • Nucleation control in solid-phase crystallization of a-Si/SiO2 by local Ge insertion Reviewed

    Isao Tsunoda, Kei Nagatomo, Atsushi Kenjo, Taizoh Sadoh, Shinya Yamaguchi, Masanobu Miyao

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   43 ( 4 B )   1901 - 1904   2004.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.43.1901

  • Nucleation Control in Solid-Phase Crystallization of a-Si/SiO_2 by Local Ge Insertion Reviewed

    Isao Tsunoda, Kei Nagatomo, Atsushi Kenjo, Taizoh Sadoh, Shinya Yamaguchi, Masanobu Miyao

    Japanese Journal of Applied Physics, Part 2: Letters   43 ( 4 )   1901 - 1904   2004.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.43.1901

  • Formation of β-FeSi_<2-x>Ge_x by Ge-Segregation-Controlled Solid-Phase Growth of [a-Si/a-FeSiGe]_n Multilayered Structure Reviewed

    43 ( 4 )   1879 - 1881   2004.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    The solid-phase growth of [a-Si/a-Fe0.4Si0.5Ge0.1]n (n=1, 2, 4; total thickness: 500 nm) multilayered structures has been investigated. After annealing at 700°C, [a-SiGe/polycrystalline β-FeSi2−xGex]n (x=0.5, 0.4, 0.2 for n=1, 2, 4, respectively) multilayered structures were formed. From the analysis of X-ray diffraction spectra, it was found that the lattice constants of β-FeSi1.5Ge0.5 changed from those of relaxed β-FeSi2 by 0.4–0.5%. The change decreased with increasing n, which was due to the segregation of Ge atoms from the a-Fe0.4Si0.5Ge0.1 layers to the a-Si layers becoming larger with increasing n. After annealing at 800°C, Ge atoms were completely swept out from the β-FeSi2−xGex lattice. In addition, the agglomeration of β-FeSi2 occurred, and nanocrystals of relaxed β-FeSi2 and c-Si0.7Ge0.3 were formed. This technique for the formation of β-FeSi2−xGex is expected to be useful for energy gap modulation for advanced optoelectrical devices.

    DOI: 10.1143/JJAP.43.1879

  • Enhanced crystal nucleation in a-SiGe/SiO 2 by ion-irradiation assisted annealing Reviewed

    Isao Tsunoda, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

    Applied Surface Science   224 ( 1-4 )   231 - 234   2004.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.apsusc.2003.08.051

  • Solid-phase crystallization of high-quality Si films on SiO2 by local Ge-insertion Reviewed

    I. Tsunoda, K. Nagatomo, A. Kenjo, Taizoh Sadoh, M. Miyao

    Proceedings of Symposium D on Thin Film and Nano-Structured Thin Solid Films   451-452   489 - 492   2004.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2003.11.011

  • Ge-dependent morphological change in poly-SiGe formed by Ni-mediated crystallization Reviewed

    T. Sadoh, H. Kanno, A. Kenjo, M. Miyao

    Applied Surface Science   224 ( 1-4 )   227 - 230   2004.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.apsusc.2003.08.050

  • Enhancement of metal-induced crystallization in Ge/Si/Ni/SiO2 layered structure Reviewed

    Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

    Proceedings of Symposium D on Thin Film and Nano-Structured Thin Solid Films   451-452   324 - 327   2004.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2003.11.059

  • Formation of β-FeSi_<2-x>Ge_x by Ge-segregation-controlled solid-phase growth of [a-Si/a-FeSiGe]_n multilayered structure Reviewed

    43 ( 4 )   1879 - 1881   2004

     More details

    Language:Others   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.43.1879

  • Furnace Annealing Behavior of B-deped Poly-SiGe Formed on Insulating Film Reviewed

    Isao Tsunoda, Taizoh Sadoh, Masanobu[et al] Miyao

    Research Reports on Information Science and Electrical Engineering of Kyushu University   8 ( 2 )   151 - 154   2003.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.15017/1515848

  • Strain modulation of β-FeSi2(Ge) formed by SPC of [a-Si/a-FeSiGe]n stacked-structure Reviewed

    8 ( 2 )   189 - 191   2003.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Solid-phase growth of [a-Si/a-Fe0.4Si0.5Ge0.1]n stacked-structures has been investigated. [a-Si/a-Fe0.4Si0.5Ge0.1]n/c-Si (n=1, 2, 4) samples were annealed at 700-900°C for 30 min in a vacuum. The grown layers were analyzed by using Auger electron spectroscopy, the X-ray diffraction, Raman spectroscopy, and the transmission electron microscopy. After annealing at 700°C, β-FeSi2(Ge) strained by 0.4-0.5% was successfully formed for the sample with n=1. The strains became small with increasing n, i.e., with thinning layer. In addition, superstructures consisting of β-FeSi2 and c-Si0.7Ge0.3 nanocrystals were obtained by Ge segregation after annealing at 800°C. These new structures are useful for fabrication of opto-electrical devices.

  • Solid-phase growth of β-FeSi2 on Si substrates with different crystal orientations Reviewed

    8 ( 2 )   155 - 158   2003.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Orientation dependent solid-phase growth of β-FeSi2 thin films on (100), (110), and (111) Si substrates has been investigated by using a-Fe(thickness: 20 nm)/c-Si stacked structures. XRD measurements suggested that the substrate orientation dependence of the formation rate of β-FeSi2 was as follows: (100) > (111) > (110). This dependence can be explained on the basis of the lattice mismatch between β-FeSi2 and Si substrates, i.e., the lattice mismatch between β-FeSi2 (100) and Si (100), β-FeSi2 (110) or (101) and Si (111), and β-FeSi2 (010) or (001) and Si (110) are 1.4-2.0%, 5.3-5.5%, and 9.2%, respectively. The substrate orientation dependence of solid-phase growth becomes relatively remarkable for very thin films.

  • Solid-Phase Growth of β-FeSi_2 on Si Substrates with Different Crystal Orientations Reviewed

    8 ( 2 )   155 - 158   2003.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Orientation dependent solid-phase growth of β-FeSi_2 thin films on (100), (110), and (111) Si substrates has been investigated by using a-Fe (thickness: 20 nm)/c-Si stacked structures. XRD measurements suggested that the substrate orientation dependence of the formation rate of β-FeSi_2 was as follows: (100) > (111) > (110). This dependence can be explained on the basis of the lattice mismatch between β-FeSi_2 and Si substrates, i.e., the lattice mismatch between β-FeSi_2(100) and Si (100), β-FeSi_2 (110) or (101) and Si (111), and β-FeSi_2(010) or (001) and Si (110) are 1.4-2.0%, 5.3-5.5%, and 9.2%, respectively. The substrate orientation dependence of solid-phase growth becomes relatively remarkable for very thin films.

    DOI: 10.15017/1515849

  • Solid phase crystallization of a-Si in Si/Ge multi-layer Reviewed

    Isao Tsunoda, Kei Nagatomo, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

    Research Reports on Information Science and Electrical Engineering of Kyushu University   8 ( 2 )   147 - 150   2003.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Relaxation process of ion irradiation defects in IV-semiconductors Reviewed

    Y. Murakami, M. Miyata, A. Kenjo, T. Sadoh, M. Miyao

    E-MRS 2002 Symposium E Materials Science and Engineering B: Solid-State Materials for Advanced Technology   102 ( 1-3 )   362 - 365   2003.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/S0921-5107(02)00620-7

  • Furnace annealing behavior of B-doped poly-SiGe formed on insulating film Reviewed

    Isao Tsunoda, Taizoh Sadoh, Masanobu Miyao

    Research Reports on Information Science and Electrical Engineering of Kyushu University   8 ( 2 )   151 - 154   2003.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Enhanced solid-phase growth of β-FeSi2 by pre-amorphization Reviewed

    206   304 - 307   2003.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Effects of Ar+ ion-irradiation on solid-phase growth of β-FeSi2 have been investigated. Fe (10 nm)/Si structures were irradiated with 20 keV Ar+ (5.0 × 1015 cm-2) at room temperature (RT) or 400 °C, and subsequently annealed at 800 °C. The results of X-ray diffraction measurements suggested that the formation of β-FeSi2 for the sample irradiated at RT was faster than that irradiated at 400 °C. However, Auger electron spectroscopy measurements showed that atomic mixing at the Fe/Si interface before annealing was larger for the sample irradiated at 400 °C. These results suggested that amorphization of the Si substrate, in addition to atomic mixing at the Fe/Si interface, enhanced formation of β-FeSi2, which was attributed to atomic rearrangement induced during defect relaxation in annealing process.

    DOI: 10.1016/S0168-583X(03)00750-X

  • Etching characteristics of SiO2 irradiated with focused ion beam Reviewed

    T. Sadoh, H. Eguchi, A. Kenjo, M. Miyao

    13th International conference on Ion beam modification of Mate Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms   206   478 - 481   2003.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/S0168-583X(03)00800-0

  • Dose-Dependent Etching Selectivity in SiO_2 by Focused Ion Beam Reviewed

    Taizoh Sadoh, Hiroomi Eguchi, Atsushi Kenjo, Masanobu Miyao

    Japanese Journal of Applied Physics, Part 2: Letters   42 ( 4 )   1855 - 1858   2003.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Metal-induced solid-phase crystallization of amorphous SiGe films on insulator Reviewed

    Hiroshi Kanno, Isao Tsunoda, Atsushi Kenjo, Taizoh Sadoh, Shinya Yamaguchi, Masanobu Miyao

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   42 ( 4 B )   1933 - 1936   2003.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/jjap.42.1933

  • Metal-Induced Solid-Phase Crystallization of Amorphous SiGe Films on Insulator Reviewed

    Hiroshi Kanno, Isao Tsunoda, Atsushi Kenjo, Taizoh Sadoh, Shinya Yamaguchi, Masanobu Miyao

    Japanese Journal of Applied Physics, Part 2: Letters   42 ( 1 )   1933 - 1936   2003.4

     More details

    Language:Others   Publishing type:Research paper (scientific journal)  

  • Dose-dependent etching selectivity in SiO2 by focused ion beam Reviewed

    Taizoh Sadoh, Hiroomi Eguchi, Atsushi Kenjo, Masanobu Miyao

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   42 ( 4 B )   1855 - 1858   2003.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/jjap.42.1855

  • Dose-Dependent Etching Selectivity in SiO2by Focused Ion Beam Reviewed

    Taizoh Sadoh, Hiroomi Eguchi, Atsushi Kenjo, Masanobu Miyao

    Japanese Journal of Applied Physics, Part 2: Letters   42 ( 1 )   1855 - 1858   2003.4

     More details

    Language:Others   Publishing type:Research paper (scientific journal)  

  • Ion-Beam Irradiation Effect on Solid-Phase Growth of β-FeSi2 Reviewed International journal

    16 ( 3-4 )   505 - 508   2003.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/S1386-9477(02)00641-0

  • Ion-beam irradiation effect on solid-phase growth of β-FeSi2 Reviewed

    16 ( 3-4 )   505 - 508   2003.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Effects of Ar+ ion-beam irradiation on solid-phase growth of β-FeSi2 have been investigated. Fe (10 nm)/Si structures were irradiated with 25 keV Ar+(5.0 × 1015 cm-2) at a temperature of 25°C (sample A) or 400°C (sample B), and subsequently annealed at 800°C. A reference was obtained after annealing without irradiation (sample C). X-ray diffraction results indicated that β-FeSi2 was formed after annealing at 800°C for 5 h, and the formation rate was the fastest for sample A and the slowest for sample C, i.e., A > B≫C. However, Auger electron spectroscopy measurements showed that atomic mixing at Fe/Si interface before annealing was B > A≫C. These results suggested that amorphization of Si substrate, in addition to atomic mixing, enhanced the solid-phase growth of β-FeSi2, which was confirmed experimentally. Moreover, a direct band gap of 0.89 eV was observed for the sample with pre-amorphization by the Fourier-transform infrared (FT-IR) spectroscopy measurements. These enhancement effects were attributed to that the phase transition to β-FeSi2 was accelerated by atomic arrangement induced during annihilation of excess vacancies. These enhancement effects can be utilized for nano-fabrication of β-FeSi2 by using focused ion-beam irradiation.

    DOI: 10.1016/S1386-9477(02)00641-0

  • Ge-fraction-dependent metal-induced lateral crystallization of amorphous-Si1-xGex (0≤x≤1) on SiO2 Reviewed

    82 ( 13 )   2148 - 2150   2003.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    The metal-induced low-temperature crystallization (MILC) of amorphous Si1-xGex on SiO2 was investigated. It was found that the growth velocity of MILC-Si1-xGex enhanced by 80% by increasing Ge fraction from 0% to 20% achieved poly-Si0.8Ge0.2 with large grains. Very sharp needle-like crystal regions were also obtained by optimizing the growth conditions.

    DOI: 10.1063/1.1564298

  • Enhancement of bulk nucleation in a-Si1-xGex on SiO2 for low-temperature solid-phase crystallization Reviewed

    T. Sadoh, I. Tsunoda, T. Nagata, A. Kenjo, M. Miyao

    E-MRS, K Thin Solid Films   427 ( 1-2 )   96 - 100   2003.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/S0040-6090(02)01255-5

  • Formation of high quality β-FeSi2 by pre-amorphization- enhanced diffusion Reviewed

    792   201 - 205   2003

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Effects of Ar+ ion irradiation on solid-phase growth of β-FeSi2 have been investigated. Si substrates were amorphized with Ar+ ions (20 keV) before Fe (15 nm) deposition to form Fe(15 nm)/a-Si/c-Si stacked structures. As a reference, Fe/c-Si stacked structures were prepared. In the initial stage of annealing at 800°C, β-FeSi 2 formation was enhanced for pre-amorphized samples, which was due to the enhanced diffusion of silicidation species. In the long time annealing, β-FeSi2 formation proceeded by thermal equilibrium diffusion, and the formation rate was not affected by pre-amorphization. Crystal quality of β-FeSi2 was improved by pre-amorphization. The pre-amorphization enhanced diffusion is useful for formation of high quality β-FeSi2 thin films.

    DOI: 10.1557/proc-792-r9.16

  • Strain modulation of β-FeSi2 by Ge-segregation in solid-phase growth of [a-Si/a-FeSiGe]n multi-layer Reviewed

    796   57 - 62   2003

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Strain modulation of β-FeSi2 by Ge doping was investigated. By solid-phase growth of [a-Si/a-Fe0.4Si0.5Ge 0.1]n layered structures, the [a-SiGe/β-FeSi 2-xGex]n multi-layered structures (n=1, 2, 4) were formed after annealing at 700°C. From the analysis of the x-ray diffraction spectra, it was found that β-FeSi1.3Ge0.7 strained by 0.4-0.5 % was formed for the sample with n=1. This value corresponded to the band gap modulation of 30 meV based on the theoretical calculation. The strains decreased with increasing n, which was due to that segregation of Ge atoms from the a-Fe0.4Si0.5Ge 0.1 layers to the a-Si layers became significant with increasing n. After annealing at 800°C, agglomeration of β-FeSi2 occurred, and nanocrystals of relaxed β-FeSi2 and c-Si 0.7Ge0.3 were formed. These new structures are useful for formation of opto-electrical devices.

    DOI: 10.1557/proc-796-v2.9

  • Position control of nucleation in solid-phase crystallization of a-Si/SiO2 by Ge layer insertion Reviewed

    Taizoh Sadoh, Kei Nagatomo, Isao Tsunoda, Atsushi Kenjo, Masanobu Miyao

    Critical Interfacial Issues in Thin-Film Optoelectronic and Energy Conversion Devices Materials Research Society Symposium - Proceedings   796   39 - 43   2003

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1557/proc-796-v2.5

  • Metal-Induced Solid-Phase Crystallization of Amorphous SiGe Films on Insulator Reviewed

    Hiroshi Kanno, Isao Tsunoda, Atsushi Kenjo, Taizoh Sadoh, Shinya Yamaguchi, Masanobu Miyao

    Japanese Journal of Applied Physics, Part 2: Letters   42 ( 4 )   1933 - 1936   2003

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/jjap.42.1933

  • Mechanism of Improved Thermal Stability of B in poly-SiGe Gate on SiON Reviewed International journal

    T. Sadoh, Fitrianto, A. Kenjo, A. Miyauchi, H. Inoue, and M. Miyao

    Jpn. J. Appl. Phys   41 ( 4B )   2468 - 2471   2002.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.41.2468

  • Mechanism of improved thermal stability of B in poly-SiGe gate on SiON Reviewed

    Taizoh Sadoh, Fitrianto, Atsushi Kenjo, Akihiro Miyauchi, Hironori Inoue, Masanobu Miyao

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   41 ( 4 B )   2468 - 2471   2002.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.41.2468

  • Low-temperature solid-phase crystallization of a-Si1-xGex on SiO2 by ion-beam stimulation Reviewed

    Isao Tsunoda, Tomohiro Nagata, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology   89 ( 1-3 )   336 - 340   2002.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/S0921-5107(01)00770-X

  • Thermal stability of B in poly-SiGe on SiON Reviewed

    T. Sadoh, Fitrianto, M. Kunigami, A. Kenjo, A. Miyauchi, H. Inoue, M. Miyao

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology   89 ( 1-3 )   129 - 132   2002.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/S0921-5107(01)00816-9

  • Low-temperature solid-phase crystallization of a-Si1-xGex on SiO2 by ion-beam stimulation Reviewed International journal

    I. Tsunoda, T. Nagata, A. Kenjo, T. Sadoh, and M. Miyao

    Materials Science and Engineering   89 ( 1-3 )   336 - 340   2002.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/S0921-5107(01)00770-X

  • Metal-induced low-temperature crystallization of amorphous SiGe on insulating films Reviewed

    M. Miyao, H. Kanno, I. Tsunoda, T. Sadoh, A. Kenjo

    Quantum Confined Semiconductor Nanostructures Materials Research Society Symposium - Proceedings   744   55 - 59   2002.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1557/proc-744-m2.8

  • Thermal stability of B in poly-SiGe on SiON Reviewed International journal

    T. Sadoh, Fitrianto, M. Kunigami, A. Kenjo, A. Miyauchi, H. Inoue, and M. Miyao

    Materials Science and Engineering   89 ( 1-3 )   129 - 132   2002.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/S0921-5107(01)00816-9

  • 500°C formation of poly-Si1-xGex (x ≥ 0.5) on SiO2 by ion-beam stimulated solid phase crystallization Reviewed

    744   501 - 505   2002

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    Ion beam stimulated solid phase crystallization of a-Si1-xGex (0 ≤ x ≤ 1) on SiO2 has been investigated. The critical temperature to cause crystal nucleation can be successfully decreased by 150°C for a-Si1-xGex with all Ge fractions (0 - 100%) by using ion stimulation. As a result, crystal growth below the softening temperature (∼ 500°C) of glass substrates was achieved for samples with Ge fractions exceeding 50%. This method combined with Ge doping and ion stimulation will be a powerful tool to fabricate poly-SiGe TFTs on low cost glass substrates.

    DOI: 10.1557/proc-744-m8.22

  • Dose Rate Dependence of Ion-Induced-Damage in Si Evaluated by Spectroscopic Ellipsometry Reviewed International journal

    Y. Murakami, H. Yamauchi, T. Sadoh, A. Kenjo, and M. Miyao

    Solid State Phenomena   78-79   341 - 343   2001.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Influence of Ion Beam Irradiation on Solid-Phase Regrowth of Amorphous Si on SiO2 Reviewed International journal

    I. Tsunoda, T. Nagata, T. Sadoh, A. Kenjo, and M. Miyao

    Solid State Phenomena   78-79   345 - 348   2001.5

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • High-Performance MOS Tunneling Cathode with CoSi2Gate Electrode Reviewed

    Taizoh Sadoh, Yi-Qun Zhang, Hiroki Yasunaga, Atsushi Kenjo, Toshio Tsurushima, Masanobu Miyao

    Japanese Journal of Applied Physics, Part 2: Letters   40 ( 1 )   2775 - 2778   2001.4

     More details

    Language:Others   Publishing type:Research paper (scientific journal)  

  • High-performance MOS tunneling cathode with CoSi2 gate electrode Reviewed

    Taizoh Sadoh, Y. Q. Zhang, H. Yasunaga, A. Kenjo, T. Tsurushima, M. Miyao

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   40 ( 4 B )   2775 - 2778   2001.4

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Ion-beam stimulated solid-phase crystallization of amorphous Si on SiO2 Reviewed

    Masanobu Miyao, Isao Tsunoda, Taizoh Sadoh, Atsushi Kenjo

    Thin Solid Films   383 ( 1-2 )   104 - 106   2001.2

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/S0040-6090(00)01634-5

  • Ion-beam Stimulated Solid-phase Crystallization of Amorphous Si on SiO2 Reviewed International journal

    M. Miyao, I. Tsunoda, T. Sadoh, and A. Kenjo

    Thin Solid Films   383 ( 1-2 )   104 - 106   2001.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/S0040-6090(00)01634-5

  • Dose rate dependence of ion-induced-damage in Si evaluated by spectroscopic ellipsometry Reviewed

    Y. Murakami, H. Yamauchi, T. Sadoh, A. Kenjo, M. Miyao

    6th International Workshop on Beam Injection assesment of Microstructures in Semiconductors (BIAMS 2000) Solid State Phenomena   78-79   341 - 344   2001

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.4028/www.scientific.net/ssp.78-79.341

  • Influence of ion beam irradiation on solid-phase regrowth of amorphous Si on SiO2 Reviewed

    I. Tsunoda, T. Nagata, Taizoh Sadoh, A. Kenjo, M. Miyao

    Solid State Phenomena   78-79   345 - 348   2001

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Effects of ion irradiation on silicon oxidation in electron cyclotron resonance argon and oxygen mixed plasma Reviewed

    S. Matsuo, M. Yamamoto, T. Sadoh, T. Tsurushima, D. W. Gao, K. Furukawa, H. Nakashima

    Journal of Applied Physics   88 ( 3 )   1664 - 1669   2000.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.373868

  • Ion Irradiation Stimulated Crystal Nucleation in Amorphous Si on SiO_2 Reviewed

    Masanobu Miyao, Isao Tsunoda, Taizoh Sadoh, Atsushi Kenjo

    Extended abstracts of the ... Conference on Solid State Devices and Materials   2000   442 - 443   2000.8

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • ECR plasma oxidation Dependence on energy of argon ion Reviewed

    S. Matsuo, M. Yamamoto, T. Sadoh, T. Tsurushima, D. W. Gao, K. Furukawa, H. Nakashima

    Fundamental Mechanisms of Low-Energy-Beam-Modified Surface Growth and Processing Materials Research Society Symposium - Proceedings   585   171 - 176   2000

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Narrow CoSi2 line formation on SiO2 by focused ion beam

    A. Matsushita, Taizoh Sadoh, T. Tsurushima

    Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) Proceedings of the International Conference on Ion Implantation Technology   861 - 864   1999.12

     More details

    Language:English   Publishing type:Research paper (other academic)  

  • Silicon fine structure formation on sapphire with Focused Ion Beam

    D. J. Bai, Y. Q. Zhang, A. Matsushita, A. Baba, A. Kenjo, Taizoh Sadoh, Hiroshi Nakashima, H. Mori, T. Tsurushima

    Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) Proceedings of the International Conference on Ion Implantation Technology   1101 - 1104   1999.12

     More details

    Language:English   Publishing type:Research paper (other academic)  

  • Characterization of CoSi2 gate MOS structure formed by ion irradiation Reviewed

    Atsushi Matsushita, Yi Qun Zhang, Taizoh Sadoh, Toshio Tsurushima

    Research Reports on Information Science and Electrical Engineering of Kyushu University   4 ( 1 )   47 - 51   1999.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Resistance increase in CoSi2 layer by irradiation induced damage Reviewed

    Atsushi Matsushita, Taizoh Sadoh, Toshio Tsurushima

    Research Reports on Information Science and Electrical Engineering of Kyushu University   4 ( 1 )   53 - 56   1999.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Resistance Increase in CoSi_2 Layer by Irradiation Induced Damage Reviewed

    Atsushi Matsushita, Taizoh Sadoh, Toshio Tsurushima

    Research Reports on Information Science and Electrical Engineering of Kyushu University   4 ( 1 )   53 - 56   1999.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.15017/1500393

  • Formation of CoSi2 gate electrode for MOS electron tunneling emitters Reviewed

    Yi Qun Zhang, Atsushi Kenjo, Taizoh Sadoh, Hiroshi Nakashima, Toshio Tsurushima

    Research Reports on Information Science and Electrical Engineering of Kyushu University   4 ( 1 )   99 - 102   1999.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Fabrication and characteristics evaluation of CoSi 2-gate MOS electron tunneling emission cathode Reviewed

    Yi Qun Zhang, Atsushi Kenjo, Taizoh Sadoh, Hiroshi Nakashima, Toshio Tsurushima

    Research Reports on Information Science and Electrical Engineering of Kyushu University   4 ( 1 )   43 - 46   1999.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Ion-beam modification of TiO2 film to multilayered photocatalyst Reviewed

    T. Sumita, H. Otsuka, H. Kubota, M. Nagata, Y. Honda, R. Miyagawa, T. Tsurushima, Taizoh Sadoh

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms   148 ( 1-4 )   758 - 761   1999.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/S0168-583X(98)00809-X

  • Thin CoSi2 formation on SiO2 with low-energy ion irradiation Reviewed

    Atsushi Matsushita, Taizoh Sadoh, Toshio Tsurushima

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   37 ( 11 )   6117 - 6122   1998.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/jjap.37.6117

  • Thin CoSi_2 Formation on SiO_2 with Low-Energy Ion Irradiation Reviewed

    Atsushi Matsushita, Taizoh Sadoh, Toshio Tsurushima

    Japanese Journal of Applied Physics, Part 2: Letters   37 ( 11 )   6117 - 6122   1998.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Thin CoSi2Formation on SiO2with Low-Energy Ion Irradiation Reviewed

    Atsushi Matsushita, Taizoh Sadoh, Toshio Tsurushima

    Japanese Journal of Applied Physics, Part 2: Letters   37 ( 1 )   6117 - 6122   1998.11

     More details

    Language:Others   Publishing type:Research paper (scientific journal)  

  • Fabrication and characterization of CoSi2 gate MOS tunnel structure Reviewed

    Yi Qun Zhang, Atsushi Matsushita, Atsushi Kenjo, Taizoh Sadoh, Hiroshi Nakashima, Noboru Teshima, Hiroshi Mori, Toshio Tsurushima

    Research Reports on Information Science and Electrical Engineering of Kyushu University   3 ( 2 )   257 - 260   1998.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Annealing effects on transition region at Si-SiO2 interface Reviewed

    Yi Qun Zhang, Akira Kikutake, Shuichi Wada, Takashi Nakashige, Dong Ju Bai, Atsushi Kenjo, Taizoh Sadoh, Hiroshi Nakashima, Noboru Teshima, Hiroshi Mori, Toshio Tsurushima

    Research Reports on Information Science and Electrical Engineering of Kyushu University   3 ( 1 )   111 - 116   1998.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Growth kinetics of CoSi formed by ion beam irradiation at room temperature Reviewed

    A. Baba, H. Aramaki, T. Sadoh, T. Tsurushima

    Journal of Applied Physics   82 ( 11 )   5480 - 5483   1997.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.366460

  • Deep states in silicon on sapphire by transient-current spectroscopy Reviewed

    T. Sadoh, A. Matsushita, Y. Q. Zhang, D. J. Bai, A. Baba, A. Kenjo, T. Tsurushima, H. Mori, H. Nakashima

    Journal of Applied Physics   82 ( 10 )   5262 - 5264   1997.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.366394

  • Deep level of iron-hydrogen complex in silicon Reviewed

    T. Sadoh, K. Tsukamoto, A. Baba, D. Bai, A. Kenjo, T. Tsurushima, H. Mori, H. Nakashima

    Journal of Applied Physics   82 ( 8 )   3828 - 3831   1997.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.365746

  • Effect of energy transport with recoil atoms on deposited energy distribution in silicon irradiated with energetic ions Reviewed

    Dong Ju Bai, Akiyoshi Baba, Atsushi Kenjo, Taizoh Sadoh, Hiroshi Nakashima, Hiroshi Mori, Toshio Tsurushima

    Research Reports on Information Science and Electrical Engineering of Kyushu University   2 ( 2 )   219 - 223   1997.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Tapered-surface etching of GaAs utilizing low-energy ion bombardment effect Reviewed

    Dong Ju Bai, Akiyoshi Baba, Atsushi Kenjo, Taizoh Sadoh, Hiroshi Nakashima, Hiroshi Mori, Toshio Tsurushima

    Research Reports on Information Science and Electrical Engineering of Kyushu University   2 ( 2 )   225 - 228   1997.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Amorphization induced by low-energy ion irradiation in silicon Reviewed

    Dong Ju Bai, Tomohiro Kawase, Akiyoshi Baba, Atsushi Kenjo, Taizoh Sadoh, Hiroshi Nakashima, Hiroshi Mori, Toshio Tsurushima

    Research Reports on Information Science and Electrical Engineering of Kyushu University   2 ( 1 )   163 - 166   1997.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Simplified evaluation of displacement effect distribution in silicon irradiated with low-energy ions Reviewed

    Dong Ju Bai, Tomohiro Kawase, Akiyoshi Baba, Atsushi Kenjo, Taizoh Sadoh, Hiroshi Nakashima, Hiroshi Mori, Toshio Tsurushima

    Research Reports on Information Science and Electrical Engineering of Kyushu University   2 ( 1 )   59 - 64   1997.3

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Behavior of radiation-induced defects and amorphization in silicon crystal Reviewed

    A. Baba, D. Bai, Taizoh Sadoh, A. Kenjo, Hiroshi Nakashima, H. Mori, T. Tsurushima

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms   121 ( 1-4 )   299 - 301   1997.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/S0168-583X(96)00392-8

  • Electrical passivation of B-doped si through thin films used in VLSI fabrication Reviewed

    Keiichi Tsukamoto, Satoru Iwasaki, Taizoh Sadoh, Yukinori Kuroki

    Thin Solid Films   286 ( 1-2 )   299 - 304   1996.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/S0040-6090(96)08538-0

  • The evaluation of temporary degradation in quarter micron MOSFET by hydrogen passivation of Boron Reviewed

    Keiichi Tsukamoto, Taizoh Sadoh, Akihiro Ikeda, Yukinori Kuroki

    Research Reports on Information Science and Electrical Engineering of Kyushu University   1 ( 1 )   39 - 44   1996.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • The Evaluation of Temporary Degradation in Quarter Micron MOSFET by Hydrogen Passivation of Boron Reviewed

    Keiichi Tsukamoto, Taizoh Sadoh, Akihiro[et al] Ikeda

    Research Reports on Information Science and Electrical Engineering of Kyushu University   ( 1 )   39 - 44   1996.9

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.15017/1474936

  • Metastable-defect behaviors of iron-boron Pairs in silicon using recombination-enhanced defect reaction Reviewed

    H. Nakashima, T. Sadoh, T. Tsurushima

    Defect and Diffusion Forum   136-137   41 - 60   1996

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.4028/www.scientific.net/ddf.136-137.41

  • Evaluation of Damage Induced by Low-Energy Ion Irradiation in Silicon Reviewed

    Akiyoshi Baba, Taizoh Sadoh, Atsushi[et al] Kenjo

    Memoirs of the Faculty of Engineering, Kyushu University   55 ( 2 )   127 - 138   1995.6

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Recombination-enhanced migration of interstitial iron in silicon Reviewed

    H. Nakashima, T. Sadoh, T. Tsurushima

    Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) Materials Science Forum   196-201 ( pt 3 )   1351 - 1356   1995

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.4028/www.scientific.net/msf.196-201.1351

  • Behavior of defects induced by low-energy ions in silicon films Reviewed

    Taizoh Sadoh, Hironori Takeshita, Akiyoshi Baba, Atsushi Kenjo, Hiroshi Nakashima, Toshio Tsurusiiima

    Japanese Journal of Applied Physics   33 ( 12S )   715   1994.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.33.7151

  • Diffusion and electrical properties of 3d transition-metal impurity series in silicon Reviewed

    Hiroshi Nakashima, Taizoh Sadoh, H. Kitagawa, K. Hashimoto

    Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) Materials Science Forum   143-4 ( pt 2 )   761 - 766   1994.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Electrical and thermal properties of structurally metastable iron-boron pairs in silicon Reviewed

    Hiroshi Nakashima, Taizoh Sadoh, T. Tsurushima

    Physical Review B   49 ( 24 )   16983 - 16993   1994.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevB.49.16983

  • Deep levels of chromium-hydrogen complexes in silicon Reviewed

    T. Sadoh, M. Watanabe, H. Nakashima, T. Tsurushima

    Journal of Applied Physics   75 ( 8 )   3978 - 3981   1994

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.356018

  • Metastable-defect behaviors of iron-boron pairs in silicon Reviewed

    Hiroshi Nakashima, Taizoh Sadoh, T. Tsurushima

    Unknown Journal   143-4 ( pt 2 )   1191 - 1196   1994

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Deep levels of vanadium- and chromium-hydrogen complexes in silicon Reviewed

    T. Sadoh, M. Watanabe, H. Nakashima, T. Tsurushima

    Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) Materials Science Forum   143-4 ( pt 2 )   939 - 944   1994

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Hole traps of metastable iron-boron pairs in silicon Reviewed

    H. Nakashima, T. Sadoh, T. Tsurushima

    Journal of Applied Physics   73 ( 6 )   2803 - 2808   1993.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.353056

  • Defect-free Ge-on-insulator with (100), (110), and (111) orientations by growth-direction-selected rapid-melting growth Reviewed

    Kaoru Toko, Takanori Tanaka, Yasuharu Ohta, Taizoh Sadoh, Masanobu Miyao

    IEEE Transactions on Information Theory   39 ( 3 )   1040 - 1043   1993.1

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/18.256510

  • Deep levels of vanadium and vanadium-hydrogen complex in silicon Reviewed

    Taizoh Sadoh, Hiroshi Nakashima, T. Tsurushima

    Journal of Applied Physics   72 ( 2 )   520 - 524   1992.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.352353

  • Diffusion of vanadium in silicon Reviewed

    Taizoh Sadoh, Hiroshi Nakashima

    Applied Physics Letters   58 ( 15 )   1653 - 1655   1991.12

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.105154

  • Role of vacancy annihilation in electrical activation of P implanted in Ge

    Taizoh SADOH

    2011-4   13 - 16   1900

     More details

    Language:English  

  • 絶縁膜上におけるGe(Si)薄膜の溶融成長 ~Si偏析効果による大粒径化~

    佐道 泰造, 宮尾 正信

    電子情報通信学会, 信学技報   112 ( 18 )   61 - 62   1900

     More details

    Language:Japanese  

  • 界面酸化膜挿入型Au誘起層交換成長法による大粒径Ge(111)/絶縁膜の低温成長-界面酸化膜厚依存性-

    Taizoh SADOH, Masanobu Miyao

    電子情報通信学会, 信学技報   112 ( 18 )   71 - 73   1900

     More details

    Language:Japanese  

  • High-Mobility Ge on Insulator (GOI) by SiGe Mixing-Triggered Rapid-Melting-Growth

    ECS Transactions   33 ( 6 )   409 - 418   1900

     More details

    Language:English  

▼display all

Presentations

  • High-Mobility Ge on Insulator (GOI) by SiGe Mixing-Triggered Rapid-Melting-Growth Invited International conference

    T. Sadoh and M. Miyao

    4th International SiGe Symposium The ECS 218th  2010.10 

     More details

    Event date: 2010.10

    Presentation type:Oral presentation (general)  

    Country:United States  

  • Lateral liquid-phase epitaxy of Ge on insulator using Si seed for ultrahigh speed transistor Invited International conference

    T. Sadoh, T. Tanaka, Y. Ohta, K.Toko, M. Miyao

    AWAD 2009  2009.6 

     More details

    Event date: 2009.6

    Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  • Effects of Capping Layers on Solid-Phase Crystallization of Sn-Doped Ge Thin Films on Insulators International conference

    #Ryu Hashimoto, #Taishiro Koga, #Takaya Nagano, Kenta Moto, Keisuke Yamamoto, Taizoh Sadoh

    14th International WorkShop on New Group IV Semiconductor Nanoelectronics  2023.12 

     More details

    Event date: 2023.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 絶縁膜上におけるIV族系半導体薄膜の低温固相成長 Invited

    古賀 泰志郎, 花房 佑樹, 茂藤 健太, 山本 圭介, 佐道 泰造

    薄膜材料デバイス研究会第20回研究集会  2023.11 

     More details

    Event date: 2023.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都   Country:Japan  

  • 絶縁膜上におけるSn添加Ge薄膜の固相成長とTFT応用 Invited

    佐道 泰造

    第41回シリサイド系半導体研究会  2023.9 

     More details

    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Ultra-High Concentration Doping by Excimer Laser Annealing Using Solid-Diffusion Source International conference

    #Ren Aoki, Keita Katayama, Daisuke Nakamura, Hisato Yabuta, Hiroshi Ikenoue, and Taizoh Sadoh

    2023 International Conference on Solid State Materials and Devices  2023.9 

     More details

    Event date: 2023.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Grain Enlargement of Ultrathin Si Films on Insulators by Sn-Doping International conference

    #Yuki Hanafusa, #Kota Okamoto, and Taizoh Sadoh

    2023 International Conference on Solid State Materials and Devices  2023.9 

     More details

    Event date: 2023.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • High Carrier Mobility of Sn-Doped Ge Thin-Films (<20 nm) by Thinning Combined with Post-Annealing International conference

    #Taishiro Koga, #Takaya Nagano, Kenta Moto, Keisuke Yamamoto, and Taizoh Sadoh

    2023 International Conference on Solid State Materials and Devices  2023.9 

     More details

    Event date: 2023.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Formation of pn Junctions by Doping Using Excimer Laser Annealing International conference

    #Ren Aoki, Keita Katayama, Daisuke Nakamura, Hisato Yabuta, Hiroshi Ikenoue, and Taizoh Sadoh

    12th Asia-Pacific Laser Symposium  2023.9 

     More details

    Event date: 2023.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Crystallization by Rapid Thermal Annealing of Ne Sputtered InSb Films Deposited on Glass International conference

    Tatsuya Okada, Otokichi Shimoda, C. J. Koswaththage, Takashi Kajiwara, Taizoh Sadoh, and Takashi Noguchi

    23rd International Meeting on Information Display  2023.8 

     More details

    Event date: 2023.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  • Growth Characteristics of Sn-Doped Si Thin-Filmson Insulator International conference

    #Yuki Hanafusa, #Kota Okamoto, and Taizoh Sadoh

    2023 Asia-Pacific Workshop on Advanced Semiconductor Devices  2023.7 

     More details

    Event date: 2023.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Improved Carrier Mobility of Sn-Doped Ge Thin-Films (≤20 nm) by Post-Annealing for Thin-Film Transistor Application International conference

    2023.7 

     More details

    Event date: 2023.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:京都   Country:Japan  

  • Sn-Doped Si Thin-Films on Insulator by Solid-Phase Crystallization International conference

    #Yuki Hanafusa, #Kota Okamoto, and Taizoh Sadoh

    30th International Workshop on Active-Matrix Flatpanel Displays and Devices  2023.7 

     More details

    Event date: 2023.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Excimer Laser Doping for PN Junction Formation with Extremely Low Thermal Budget International conference

    #Ren Aoki, Keita Katayama, Daisuke Nakamura, Hiroshi Ikenoue, and Taizoh Sadoh

    30th International Workshop on Active-Matrix Flatpanel Displays and Devices  2023.7 

     More details

    Event date: 2023.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Interface-Modulated Solid-Phase Crystallization of Sn-Doped GeUltra-thin Films for Advanced TFT Invited International conference

    @Taizoh Sadoh, #Takaya Nagano, #Taishiro Koga, @Kenta Moto, and @Keisuke Yamamoto

    The 29th International Display Workshops  2022.12 

     More details

    Event date: 2022.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Ultrathin Large Grain Si Films on Insulator by Solid-Phase Crystallization Combined with Sn-Doping International conference

    #Kota Okamoto, #Tomohiro Kosugi, and @Taizoh Sadoh

    2022 International Conference on Solid State Materials and Devices  2022.9 

     More details

    Event date: 2022.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Formation of High-Mobility InSb Films on Glass by Sputtering and Rapid-Thermal Annealing International conference

    @Takashi Kajiwara, @Otokichi Shimoda, @Tatsuya Okada, @Charith Jayanada Koswaththage, @Takashi Noguchi, and @Taizoh Sadoh

    2022 International Conference on Solid State Materials and Devices  2022.9 

     More details

    Event date: 2022.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Improved Carrier Mobility of Sn-Doped Ge Ultrathin (<50nm) Films on Insulator by a-Si Capping in Solid-Phase Crystallization International conference

    #Takaya Nagano, #Ryutaro Hara, @Kenta Moto, @Keisuke Yamamoto, and @Taizoh Sadoh

    2022 International Conference on Solid State Materials and Devices  2022.9 

     More details

    Event date: 2022.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Solid-Phase Crystallization Characteristics of SiSn Thin Film on Insulating Substrates International conference

    #Kota Okamoto, #Tomohiro Kosugi, and @Taizoh Sadoh

    9th International Symposium on Control of Semiconductor Interfaces  2022.9 

     More details

    Event date: 2022.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Improved Solid-Phase Crystallization of Sn-Doped Ge Thin Films (≤ 50 nm) on Insulator by a-Si Capping International conference

    2022.9 

     More details

    Event date: 2022.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya   Country:Japan  

  • Solid-Phase Crystallization Characteristics of Interface-Modulated Sn-Doped Ge Thin Films on Insulator with Capping International conference

    #Takaya Nagano, #Ryutaro Hara, and @Taizoh Sadoh

    29th International Workshop on Active-Matrix Flatpanel Displays and Devices  2022.7 

     More details

    Event date: 2022.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • High Carrier Mobility of Sn-Doped Ge Ultrathin Films on Insulator by Capping-Enhanced Solid-Phase Crystallization International conference

    #Ryutaro Hara, #Masanori Chiyozono, and @Taizoh Sadoh

    2021 International Conference on Solid State Materials and Devices  2021.9 

     More details

    Event date: 2021.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Effect of Sn doping to Solid-Phase Crystallization of Si thin film on Insulator International conference

    #Tomohiro Kosugi, #Kota Okamoto, and @Taizoh Sadoh

    2021 International Conference on Solid State Materials and Devices  2021.9 

     More details

    Event date: 2021.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Crystallization of SiN Capped InSb Films on Glass by Rapid Thermal Annealing International conference

    @Otokichi Shimoda, @Yuki Sawama, @C. J. Koswaththage, @Takashi Noguchi, @Takashi Kajiwara, @Taizoh Sadoh, and @Tatsuya Okada

    The 21st International Meeting on Information Display (IMID 2021)  2021.8 

     More details

    Event date: 2021.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Low-Temperature Solid-Phase Crystallization of High-Sn Concentration SiSn on Insulator International conference

    #K. Okamoto, #T. Kosugi, and @T. Sadoh

    28th International Workshop on Active-Matrix Flatpanel Displays and Devices  2021.6 

     More details

    Event date: 2021.6 - 2021.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Improved Carrier Mobility of Poly-Ge Ultrathin Films on Insulator by Solid-Phase Crystallization International conference

    #R. Hara, #M. Chiyozono, and @T. Sadoh

    28th International Workshop on Active-Matrix Flatpanel Displays and Devices  2021.6 

     More details

    Event date: 2021.6 - 2021.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • (Plenary) Low-Temperature Crystallization of Group-IV Semiconductors on Insulator for Advanced Electronics Invited International conference

    @Taizoh Sadoh

    4th International Conference on Circuits, Systems and Simulation (ICCSS 2021) & 4th International Conference on Consumer Electronics and Devices (ICCED 2021)  2021.5 

     More details

    Event date: 2021.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Growth Characteristics of SiSn on Insulator by Solid Phase Crystallization International conference

    #Tomohiro Kosugi, #Kazuki Yagi, and @Taizoh Sadoh

    JSAP Kyushu Chapter Annual Meeting 2020 /The 5th Asian Applied Physics Conference  2020.11 

     More details

    Event date: 2020.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Low-Temperature Solid-Phase Crystallization of SiSn on Insulator - Effects of Sn Concentration and Film Thickness - International conference

    #Tomohiro Kosugi, #Kazuki Yagi, and @Taizoh Sadoh

    2020 International Conference on Solid State Materials and Devices  2020.9 

     More details

    Event date: 2020.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • High Carrier Mobility of Sn-Doped Ge Thin-Films (~20 nm) on Insulator by Interface-Modulated Solid-Phase Crystallization International conference

    #Masanori Chiyozono, #Xiangsheng Gong, @Taizoh Sadoh

    2020 International Conference on Solid State Materials and Devices  2020.9 

     More details

    Event date: 2020.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Low-Temperature Solid-Phase Crystallization Combined with a-Si Under-Layer for High Sn Concentration GeSn Film without Sn-Segregation International conference

    #Yuta Tan, #Daiki Tsuruta, @Taizoh Sadoh

    2020 International Conference on Solid State Materials and Devices  2020.9 

     More details

    Event date: 2020.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Improved Carrier Mobility of Sn-Doped Ge Thin-Films (≤50 nm) by Interface-Modulated Solid-Phase Crystallization Combined with Thinning International conference

    2020.9 

     More details

    Event date: 2020.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • SiSn Film on Insulator by Low-Temperature Solid-Phase Crystallization International conference

    #T. Kosugi, #K. Yagi, @T. Sadoh

    27th International Workshop on Active-Matrix Flatpanel Displays and Devices  2020.9 

     More details

    Event date: 2020.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Low-Temperature Bi-Induced Layer Exchange Crystallization for Formation of n-Type Ge on Insulator International conference

    #Xiangsheng Gong, #Sen Liu, #Hongmiao Gao, @Taizoh Sadoh

    2019 International Conference on Solid State Materials and Devices  2019.9 

     More details

    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • High Carrier Mobility Sn-Doped Ge Thin-Films (≤50 nm) on Insulator by Interface-Modulated Solid-Phase Crystallization at Low-Temperature International conference

    2019.9 

     More details

    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya   Country:Japan  

  • Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation International conference

    Xiangsheng Gong, Chang Xu, and Taizoh Sadoh

    26th International Workshop on Active-Matrix Flatpanel Displays and Devices  2019.7 

     More details

    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Low-temperature and low-cost excimer laser doping for poly-si thin-film transistor fabrication International conference

    K. Imokawa, N. Tanaka, A. Suwa, D. Nakamura, T. Sadoh, T. Goto, H. Ikenoue

    SPIE Photonics West, Lase, Laser-based Micro- and Nanoprocessing XIII  2019.2 

     More details

    Event date: 2019.2

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  • Low-Temperature Solid-Phase Crystallization of SiSn Films on Insulator International conference

    K. Yagi, M. Miyao and T. Sadoh

    14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14)  2018.10 

     More details

    Event date: 2018.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • High Carrier Mobility Sn-Doped Ge on Insulator by Solid-Phase Crystallization Combined with Si-Under-Layer Insertion International conference

    Chang Xu, Masanobu Miyao, Taizoh Sadoh

    E-MRS, 2018 Fall Meeting  2018.9 

     More details

    Event date: 2018.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Poland  

  • N-Type Ge on Insulator by Low-Temperature Sb-Induced Layer Exchange Crystallization Combined with Ge Under-Layer Insertion International conference

    Hongmiao Gao, Masanobu Miyao, Taizoh Sadoh

    E-MRS, 2018 Fall Meeting  2018.9 

     More details

    Event date: 2018.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Poland  

  • Low-Temperature Formation of n-Type Ge on Insulator by Thickness-Modulated Sb-Induced Layer Exchange Crystallization Combined with Thin Ge Under-Layer Insertion International conference

    H. Gao, M. Miyao, T. Sadoh

    2018 International Conference on Solid-State Devices and Materials  2018.9 

     More details

    Event date: 2018.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Excimer Laser Doping of LTPS Thin Films for Printable Device Fabrication International conference

    N. Tanaka, K. Imokawa, A. Suwa, D. Nakamura, T. Sadoh, H. Ikenoue

    2018 International Conference on Solid-State Devices and Materials  2018.9 

     More details

    Event date: 2018.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Enhanced Growth of High Sn Concentration (Sn>=10%) GeSn on Insulator by Low Temperature (~170°C) Solid-Phase Crystallization Combined with Weak Laser Irradiation International conference

    2018.9 

     More details

    Event date: 2018.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tokyo   Country:Japan  

  • Characterization of Characterization of Excimer-Laser Doping of a Poly-Si Thin Film with a Phosphoric-Acid Coating for Thin-Film-Transistor Fabrication International conference

    Kaname Imokawa, Nozomu Tanaka, Akira Suwa, Daisuke Nakamura, Taizoh Sadoh, Tetsuya Goto, and Hiroshi Ikenoue

    25th International Workshop on Active-Matrix Flatpanel Displays and Devices  2018.7 

     More details

    Event date: 2018.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Low-Temperature Formation of n-Ge/Insulator by Sb-Induced Layer Exchange Crystallization Combined with Ge Under-Layer Insertion International conference

    Hongmiao Gao and Taizoh Sadoh

    2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices  2018.7 

     More details

    Event date: 2018.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Effect of film thickness on low temperature solid-phase crystallization of SiSn on insulator International conference

    Kazuki Yagi and Taizoh Sadoh

    2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices  2018.7 

     More details

    Event date: 2018.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Effects of a-Si Layer Insertion on Solid-Phase Crystallization of Sn Doped Ge on Insulator International conference

    Chang Xu, Hongmiao Gao, Masanobu Miyao, and Taizoh Sadoh

    2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices  2018.7 

     More details

    Event date: 2018.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Low-Temperature Crystallization of Group-IV Semiconductors on Insulator Using Catalysis Invited International conference

    T. Sadoh, M. Miyao, and I. Tsunoda

    11th International WorkShop on New Group IV Semiconductor Nanoelectronics  2018.2 

     More details

    Event date: 2018.2

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Low-Temperature Formation of n-Type Ge on Insulator by Sb-Induced Layer Exchange Crystallization International conference

    Hongmiao Gao, Masanobu Miyao, and Taizoh Sadoh

    11th International WorkShop on New Group IV Semiconductor Nanoelectronics  2018.2 

     More details

    Event date: 2018.2

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • High Substitutional-Sn-Concentration GeSn-on-Insulator by Weak-Laser-Irradiation-Enhanced Solid-Phase Crystallization at Low-Temperature (~170°C) International conference

    2017.9 

     More details

    Event date: 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sendai   Country:Japan  

  • Low-Temperature Sb-Induced Layer Exchange Crystallization for Slef-Limiting Formation of n-Type Ge/Insulator International conference

    H. Gao, R. Aoki, M. Miyao, and T. Sadoh

    2017 International Conference on Solid-State Devices and Materials  2017.9 

     More details

    Event date: 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 触媒成長法を用いたIV族半導体/絶縁膜の低温形成 - 高性能フレキシブル・エレクトロニクスの創出を目指して - Invited

    佐道泰造,宮尾正信,角田功

    第78回応用物理学会 秋季学術講演会  2017.9 

     More details

    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:Sendai   Country:Japan  

  • Low-Temperature Formation of n-Type Ge/Insulator by Sb-Induced Layer Exchange Crystallization International conference

    H. Gao, R. Aoki, M. Sasaki, M. Miyao, and T. Sadoh

    24th International Workshop on Active-Matrix Flatpanel Displays and Devices  2017.7 

     More details

    Event date: 2017.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Thickness-Dependent Substitutional-Sn-Concentration in GeSn-on-Insulator by Weak- Laser-Irradiation-Enhanced Solid-Phase Crystallization at Low-Temperature (180°C) International conference

    2017.7 

     More details

    Event date: 2017.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto   Country:Japan  

  • A Novel Method for Laser Doping of Poly-Si Thin Films Using XeF Excimer Laser Irradiation in Acid Solution International conference

    Nozomu Tanaka, Akira Suwa, Tetsuya Goto, Daisuke Nakamura, Taizoh Sadoh, Hiroshi Ikenoue

    Lasers in Manufacturing Conference 2017  2017.6 

     More details

    Event date: 2017.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Germany  

  • Weak-Laser-Irradiation-Enhanced Solid-Phase Crystallization of GeSn-on-Insulator at Low-Temperature (180°C) - Thickness-Dependent High Substitutional-Sn-Concentration - International conference

    2017.6 

     More details

    Event date: 2017.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto   Country:Japan  

  • Formation of n-Type Ge on Insulator by Low-Temperature Sb-Induced Layer Exchange Crystallization International conference

    H. Gao, R. Aoki, M. Sasaki, M. Miyao, and T. Sadoh

    17th International Workshop on Junction Technology 2017  2017.6 

     More details

    Event date: 2017.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Low-Temperature (~250°C) Growth of Large-Grain Sn-Doped Ge (100) on Insulator by Al-Induced Crystallization for Flexible Electronics International conference

    M. Sasaki, Masanobu Miyao, Taizoh SADOH

    2017.2 

     More details

    Event date: 2017.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sendai   Country:Japan  

  • High Carrier Mobility (~320 cm2/Vs) of Sn-Doped Poly-Ge on Insulator by Low-Temperature Solid-Phase Crystallization International conference

    2016 MRS Falll Meeting  2016.11 

     More details

    Event date: 2016.11 - 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  • Low-Temperature (<250°C) Lateral Crystallization of Sn-Doped Ge-on-Insulator Enhanced by Au Catalysis International conference

    T. Sakai, Taizoh SADOH, Ryo Matsumura, Masanobu Miyao

    2016.11 

     More details

    Event date: 2016.11 - 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston   Country:United States  

  • Pulsed Laser Annealing for Non-Thermal Equilibrium GeSn (Sn>10%) on Insulating Substrate International conference

    2016 MRS Falll Meeting  2016.11 

     More details

    Event date: 2016.11 - 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  • Low-Temperature Growth of Orientation-Controlled Large-Grain Ge-Rich SiGe on Insulator at Controlled-Position for Flexible Electronics Invited International conference

    230th ECS Meeting  2016.10 

     More details

    Event date: 2016.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  • Cooling Rate Dependent High Substitutional Sn Concentration (>10%) in GeSn Crystals on Insulator by Pulsed Laser-Annealing International conference

    230th ECS Meeting  2016.10 

     More details

    Event date: 2016.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  • Low-Temperature Formation of Sn-Doped Ge on Insulating Substrates by Metal-Induced Crystallization International conference

    230th ECS Meeting  2016.10 

     More details

    Event date: 2016.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  • Thickness-Controlled Low-Temperature (~380°C) Solid-Phase Crystallization of Sn-Doped Poly-Ge/Insulator for High Carrier Mobility (~320 cm2/Vs) International conference

    K. Moto, Taizoh SADOH, Y. Kai, Ryo Matsumura, Masanobu Miyao

    2016.9 

     More details

    Event date: 2016.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tsukuba   Country:Japan  

  • Thermally-Stable High Sn Concentration (~9%) GeSn on Insulator by Ultra-Low Temperature (~180°C) Solid-Phase Crystallization Triggered by Laser-Anneal Seeding International conference

    Ryo Matsumura, Kenta Moto, Y. Kai, Taizoh SADOH, Hiroshi Ikenoue, Masanobu Miyao

    2016.9 

     More details

    Event date: 2016.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tsukuba   Country:Japan  

  • Low-Temperature Gold-Induced Lateral Crystallization of Sn-Doped Ge on Insulator for Flexible Electronics International conference

    International Conference on Solid State Devices and Materials 2016  2016.9 

     More details

    Event date: 2016.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Orientation Controlled Artificial Nano-CRystals for Hybrid-Formation of (111), (110), and (100) Germanium-on-Insulator Structures International conference

    International Conference on Nanostructured Materials  2016.8 

     More details

    Event date: 2016.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Canada  

  • Low-Temperature (≤300°C) Nano-Seeding Growth of Position-Controlled Large-Grain Germanium on Insulator for Flexible Electronics International conference

    Taizoh SADOH, R. Aoki, T. Tanaka, Masanobu Miyao

    2016.8 

     More details

    Event date: 2016.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Quebec   Country:Canada  

  • Formation and Analysis of GeSn on Insulator with Non-Thermal Equilibrium Sn Concentration Obtained by Pulsed Laser-Annealing International conference

    Asia-Pacific Conference on Semiconducting Silicides and Related Materials 2016  2016.7 

     More details

    Event date: 2016.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Low-Temperature Formation of Position-Controlled Large-Grain Ge on Insulator by Gold-Induced Crystallization Combined with Localized Nucleation International conference

    Asia-Pacific Conference on Semiconducting Silicides and Related Materials 2016  2016.7 

     More details

    Event date: 2016.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Large-Grain Sn-Doped Ge (100) on Insulator by Aluminum-Induced Crystallization at Low-Temperature for Flexible Electronics International conference

    Active-Matrix Flatpanel Displays and Devices 2016  2016.7 

     More details

    Event date: 2016.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Pulsed Laser Annealing for Supersaturated Substitutional Sn Atoms in GeSn Thin-Films on Insulator International conference

    International Union of Materials Research Societies - International Conference on Electronic Materials  2016.7 

     More details

    Event date: 2016.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Singapore  

  • Non-Thermal Equilibrium Growth of Amorphous Ge1-xSnx (0<x<0.2) / Insulator Structures by Pulsed Laser-Annealing International conference

    8th International SiGe Technology and Device Meeting  2016.6 

     More details

    Event date: 2016.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Liquid Phase Growth of Composition-Controlled Large-Grain SixGe1-x (0<x<0.2) on Insulating Substrates International conference

    8th International SiGe Technology and Device Meeting  2016.6 

     More details

    Event date: 2016.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Low Temperature (<250oC) Au-Induced Lateral Crystallization of Sn-Doped Ge on Insulator International conference

    8th International SiGe Technology and Device Meeting  2016.6 

     More details

    Event date: 2016.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Formation of High-Mobility Ge(Sn) on Insulator by Low-Temperature (~400°C) Solid-Phase Crystallization International conference

    Y. Kai, Ryo Matsumura, Taizoh SADOH, Masanobu Miyao

    2016.6 

     More details

    Event date: 2016.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya   Country:Japan  

  • Position-Controlled Ge Crystals on Insulator at Low Temperature (≤300°C) by Spatially-Modulated Gold-Induced Crystallization International conference

    R. Aoki, T. Tanaka, J.-H. Park, Masanobu Miyao, Taizoh SADOH

    2016.6 

     More details

    Event date: 2016.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya   Country:Japan  

  • Low-temperature formation of Sn-doped Ge on insulator by Au-induced lateral crystallization for flexible electronics International conference

    35th Electronic Materials Symposium  2016.6 

     More details

    Event date: 2016.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Formation of GeSn Crystals with High Sn Concentration on Insulating Substrate by Pulsed Laser-Annealing International conference

    9th International WorkShop on New Group IV Semiconductor Nanoelectronics  2016.1 

     More details

    Event date: 2016.1

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Low Temperature (~150oC) Au-Induced Lateral Growth of a-GeSn on Insulator International conference

    9th International WorkShop on New Group IV Semiconductor Nanoelectronics  2016.1 

     More details

    Event date: 2016.1

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Analysis and control of Si segregation phenomena to achieve uniform-SiGe crystals on insulator by rapid-melting growth International conference

    2015 International Electron Devices and Materials Symposium  2015.11 

     More details

    Event date: 2015.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Taiwan, Province of China  

  • Effects of Diffusion-Barrier-Patterning on Formation of Position-Controlled Ge-on- Insulator by Gold-Induced Crystallization at Low Temperatures (≤300°C) International conference

    Rikuta Aoki, J.-H. Park, Taizoh SADOH, Masanobu Miyao

    2015.11 

     More details

    Event date: 2015.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tainan   Country:Taiwan, Province of China  

  • Laser-Annealing-Induced Crystallization of Ge1-xSnx (0≦x≦0.2) on Insulating Substrate International conference

    Kenta Moto, Ryo Matsumura, Taizoh SADOH, Hiroshi Ikenoue, Masanobu Miyao

    2015.11 

     More details

    Event date: 2015.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tainan   Country:Taiwan, Province of China  

  • Laser-Annealing-Induced Crystallization of Ge1-xSnx (0≦x≦0.2) on Insulating Substrate International conference

    Kenta Moto, Ryo Matsumura, Taizoh SADOH, Hiroshi Ikenoue, Masanobu Miyao

    2015.11 

     More details

    Event date: 2015.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tainan   Country:Taiwan, Province of China  

  • Gold-induced low-temperature (≤300°C) growth of quasi-single crystal SiGe on insulator for advanced flexible electronics Invited International conference

    Taizoh SADOH, J.-H. Park, Rikuta Aoki, Masanobu Miyao

    2015.10 

     More details

    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Phoenix   Country:United States  

  • Ultra-low temperature (~180°C) solid-phase crystallization of GeSn on insulator triggered by laser-anneal seeding International conference

    Ryo Matsumura, Kenta Moto, Yuki Kai, Taizoh SADOH, Hiroshi Ikenoue, Masanobu Miyao

    2015.10 

     More details

    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Phoenix   Country:United States  

  • Non-thermal equilibrium formation of Ge1-xSnx (0≦x≦0.2) crystals on insulator by pulsed laser annealing International conference

    Kenta Moto, Ryo Matsumura, Hironori Chikita, Taizoh SADOH, Hiroshi Ikenoue, Masanobu Miyao

    2015.10 

     More details

    Event date: 2015.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Phoenix   Country:United States  

  • Thermally-Stable High Sn Concentration (~9%) GeSn on Insulator by Ultra-Low Temperature (~180°C) Solid-Phase Crystallization Triggered by Laser-Anneal Seeding International conference

    Ryo Matsumura, Taizoh SADOH, Masanobu Miyao

    2015.9 

     More details

    Event date: 2015.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sapporo   Country:Japan  

  • Low-Temperature (~150°C) Solid-Phase Epitaxy of a-GeSn/c-Ge for High Non-Equilibrium Substitutional Sn-Concentration GeSn International conference

    Ryo Matsumura, Taizoh SADOH, Masanobu Miyao

    2015.9 

     More details

    Event date: 2015.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sapporo   Country:Japan  

  • Laser-Anneal Seeded Solid-Phase Crystallization for Ultra-Low Temperature Growth of Germanium-Tin International conference

    Taizoh SADOH, Masanobu Miyao

    2015.8 

     More details

    Event date: 2015.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Cancun   Country:Mexico  

  • Segregation-Controlled Rapid-Melting Growth for Sige-on-Insulator with Uniform Lateral Composition Invited International conference

    IMRC 2015  2015.8 

     More details

    Event date: 2015.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Mexico  

  • Crystallization of GeSn on insulating substrates by lateral solid-phase crystallization technique International conference

    EMS 2015  2015.7 

     More details

    Event date: 2015.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Quasi-Single Crystal SiGe on Insulator by Au-Induced Crystallization for Flexible Electronics International conference

    AM-FPD-15  2015.7 

     More details

    Event date: 2015.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Thickness dependent solid phase crystallization of amorphous GeSn on insulating substrates International conference

    ICSI 9  2015.5 

     More details

    Event date: 2015.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Canada  

  • Large Single-Crystal Ge-on-Insulator by Thermally-Assisted Si-Seeded-Pulse-Laser Annealing (≤400°C) International conference

    Taizoh SADOH, Masanobu Miyao

    2015.5 

     More details

    Event date: 2015.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Montreal   Country:Canada  

  • Low-Temperature (≤300°C) Formation of Orientation-Controlled Large-Grain (≥10 μm) Ge-Rich SiGe on Insulator by Gold-Induced Crystallization International conference

    Taizoh SADOH, Masanobu Miyao

    2015.5 

     More details

    Event date: 2015.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Montreal   Country:Canada  

  • High Sn-Concentration (~8%) GeSn by Low-Temperature (~150°C) Solid-Phase Epitaxy of a-GeSn/c-Ge International conference

    Taizoh SADOH, Masanobu Miyao

    2015.5 

     More details

    Event date: 2015.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Montreal   Country:Canada  

  • Melting Sn Induced Low-Temperature Seeding for Position Controlled Giant GeSn Crystal Arrays International conference

    ICSI 9  2015.5 

     More details

    Event date: 2015.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Canada  

  • Low Temperature (<200oC) position controlled Solid Phase Crystallization of GeSn combined with Laser Anneal Seeding International conference

    ICSI 9  2015.5 

     More details

    Event date: 2015.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Canada  

  • Low temperature solid phase crystallization of GeSn on insulator for flexible electronics International conference

    INC11  2015.5 

     More details

    Event date: 2015.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Orientation-controlled large-grain SiGe on insulator by gold-induced crystallization at low-temperature for flexible opto-electronics International conference

    INC11  2015.5 

     More details

    Event date: 2015.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Sn-precipitation-suppressed solid-phase epitaxy of GeSn on Ge at low-temperatures (~150°C) International conference

    Taizoh SADOH, Masanobu Miyao

    2015.5 

     More details

    Event date: 2015.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka   Country:Japan  

  • Ultra-Low-Temperature Crystallization of a-GeSn on Insulator for Flexible Electronics International conference

    2015.1 

     More details

    Event date: 2015.1

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Composition-controlled SiGe crystalson insulator by rapid-melting growth -Analysisand control of SiGe segregation- International conference

    2015.1 

     More details

    Event date: 2015.1

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Low-Temperature Crystallization of a-GeSn on Insulating Films for Next-Generation Flexible Electronics(1) Characteristics of Solid Phase Crystallization International conference

    IEDMS 2014  2014.11 

     More details

    Event date: 2014.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Taiwan, Province of China  

  • Large-Grain Ge-on-Insulator Structure by Rapid-Melting Growth of a-GeSn International conference

    IEDMS 2014  2014.11 

     More details

    Event date: 2014.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Taiwan, Province of China  

  • Low Temperature Crystallization of a-GeSn on Insulating Films for Next Generation Flexible Electronics - (2) Positioning Control of Nucleation – International conference

    Taizoh SADOH, Masanobu Miyao

    2014.11 

     More details

    Event date: 2014.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hualien   Country:Taiwan, Province of China  

  • Segregation-Controlled Rapid-Melting Growth for Large-Grain and Uniform -Composition SiGe on Insulator Invited International conference

    Taizoh SADOH, Yuki Kai, Hironori Chikita, Ryo Matsumura, M. Miyao

    JSPS International Core-to-Core Program Workshop on Atomically Controlled Processing for Ultra-large Scale Integration  2014.11 

     More details

    Event date: 2014.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Belgium  

  • Self-Organized Technologies of Group-IV Based Hetero-Semiconductors on Insulator for Multi-Functional Devices Invited International conference

    ICTF-16  2014.10 

     More details

    Event date: 2014.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Croatia  

  • Low-Temperature Gold-Induced Crystallization of Orientation Controlled Sige on Plastic for Flexible Electronics International conference

    ICTF-16  2014.10 

     More details

    Event date: 2014.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Croatia  

  • Melting-Sn Induced Seeding-Processing for Low-Temperature Lateral-Crystallization of a-GeSn on Insulating Substrate International conference

    SSDM 2014  2014.9 

     More details

    Event date: 2014.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Orientation-Controlled Large-Grain SiGe on Flexible Substrate by Nucleation-Controlled Gold-Induced Crystallization International conference

    SSDM 2014  2014.9 

     More details

    Event date: 2014.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Formation of Large-Grain Ge-Based Group-IV Crystals on Insulator by Seedless Rapid-Melting Growth in Solid-Liquid-Coexisting Temperature Region International conference

    SSDM 2014  2014.9 

     More details

    Event date: 2014.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Formation of Large Grain Ge on Insulator Structure by Liquid-Solid Coexisting Annealing of a-GeSn International conference

    IUMRS-ICA  2014.8 

     More details

    Event date: 2014.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Composite-Structures of Single-Crystalline Ge(SiSn) and Amorphous Insulator on Si Platform for Multi-Functional Transistors by Self-Organized Processing Invited International conference

    ICCE-22  2014.7 

     More details

    Event date: 2014.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • Self-Organized Crystallization of Group IV Mixed-Crystal Semiconductors on Insulating Substrate for Advanced Thin-Film-Transistors International conference

    ICCE-22  2014.7 

     More details

    Event date: 2014.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • Low-Temperature Formation of Atomically-Controlled GeSn Thin-Films on SiGe Virtual -Substrate by Liquid-Solid Coexisting Annealing International conference

    ICCE-22  2014.7 

     More details

    Event date: 2014.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Other  

  • Formation of Quasi-Single-Crystal Ge on Plastic by Nucleation-Controlled Au-Induced Layer-Exchange Growth for Flexible Electronics International conference

    AM-FPD 14  2014.7 

     More details

    Event date: 2014.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Ultralow-Temperature Catalyst-Induced-Crystallization of SiGe on Plastic for Flexible Electronics Invited International conference

    Taizoh SADOH, J.-H. PARK, Masashi Kurosawa, M. Miyao

    7th International Silicon-Germanium Technology and Device Meeting  2014.6 

     More details

    Event date: 2014.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Singapore  

  • Self-organized-seeding process for melt-back lateral-growth of group-IV mixed-crystal on insulator International conference

    7th International Silicon-Germanium Technology and Device Meeting  2014.6 

     More details

    Event date: 2014.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Singapore  

  • Sn-enhanced low-temperature crystallization of a-GeSn/c-Si Stacked Structure for high-quality SiGe on Si platform International conference

    7th International Silicon-Germanium Technology and Device Meeting  2014.6 

     More details

    Event date: 2014.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Singapore  

  • Effect of Sn-doped Ge Insertion Layers on Epitaxial Growth of Ferromagnetic Fe3Si Films on a Flexible Substrate International conference

    7th International Silicon-Germanium Technology and Device Meeting  2014.6 

     More details

    Event date: 2014.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Singapore  

  • Formation of Large Grain Ge single crystal on Insulating substrate by Liquid-Solid Coexisting Annealing of a-Ge(Sn) International conference

    225th ECS Meeting  2014.5 

     More details

    Event date: 2014.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  • Orientation-Controlled Large-Grain SiGe Crystal on Flexible Substrate by Low -Temperature Metal-Induced Crystallization Invited International conference

    Taizoh SADOH, J.-H. PARK, M. Miyao

    7th International WorkShop on New Group IV Semiconductor Nanoelectronics  2014.1 

     More details

    Event date: 2014.1

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Dynamic control of lateral crystallization for Group IV mixed-crystal semiconductor on insulating substrate International conference

    7th International WorkShop on New Group IV Semiconductor Nanoelectronics  2014.1 

     More details

    Event date: 2014.1

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Influences of Sn on low-temperature crystallization of a-GeSn mixed or a-Ge/Sn stacked layer on crystal substrate International conference

    7th International WorkShop on New Group IV Semiconductor Nanoelectronics  2014.1 

     More details

    Event date: 2014.1

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Narrowing-Induced Orientation-Stabilization in Rapid-Melting Growth of Ge-on- Insulator International conference

    Taizoh SADOH

    IUMRS-ICA 2013  2013.12 

     More details

    Event date: 2013.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:India  

  • Formation of giant SiGe crystals on insulator by self-organized-seeding rapid-melting growth International conference

    ISQNM 2013  2013.12 

     More details

    Event date: 2013.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Singapore  

  • Low Temperature (~300oC) Epitaxial Growth of SiGe by Liquid-Solid Coexisting Annealing of a-GeSn/Si(100) Structure International conference

    ISQNM 2013  2013.12 

     More details

    Event date: 2013.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Singapore  

  • Formation of Orientation-Controlled Thin (~50 nm) Ge(111)-on-Insulator by Rapid- Melting Growth Combined with Narrow-Striping International conference

    MNC 2013  2013.11 

     More details

    Event date: 2013.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Low-Temperature Metal-Induced Crystallization of Orientation-Controlled SiGe on Insulator for Flexible Electronics Invited International conference

    Taizoh SADOH, J.-H. PARK, Masashi Kurosawa, M. Miyao

    The Electrochemical Society, 224th ECS Meeting  2013.10 

     More details

    Event date: 2013.10 - 2013.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  • Liquid-Solid Coexisting Annealing of a-GeSn/Si(100) Structure for Low Temperature Epitaxial Growth of SiGe International conference

    224th ECS Meeting  2013.10 

     More details

    Event date: 2013.10 - 2013.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  • High-Quality Hybrid-GeSn/Ge Stacked-Structures by Low-Temperature -Induced-Melting Growth International conference

    224th ECS Meeting  2013.10 

     More details

    Event date: 2013.10 - 2013.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  • Hybrid-Formation of Single-Crystalline Ge(Si,Sn)-on-Insulator Structures by Self-Organized Melting-Growth Invited International conference

    SSDM 2013  2013.9 

     More details

    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Low-Temperature (~300oC) Epitaxial-Growth of SiGe(Sn) on Si-Platform by Liquid-Solid Coexisting Annealing International conference

    SSDM 2013  2013.9 

     More details

    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Segregation-Free Giant Single-Crystalline SiGe-on-Insulator by Super-Cooling-Controlled Rapid-Melting Growth International conference

    SSDM 2013  2013.9 

     More details

    Event date: 2013.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Cooling-Rate-Controlled Rapid-Melting-Growth for Giant-Single-Crystal SiGe on Insulator International conference

    The 17th International Conference on Crystal Growth and Epitaxy  2013.8 

     More details

    Event date: 2013.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Poland  

  • Selective-Growth of (100)- and (111)- Ge Thin-Films on Insulator by Interfacial–Energy -Controlled Metal-Induced-Crystallization International conference

    Taizoh SADOH, Masanobu Miyao

    2013.8 

     More details

    Event date: 2013.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Warsaw   Country:Poland  

  • High-Quality Ge-Networks on Insulator by Liquid-Phase Lateral-Epitaxy International conference

    The 55th Electronic Materials Conference  2013.6 

     More details

    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  • Laterally Graded SiGe-Profiles on Insulator by Segregation-Controlled Rapid-Melting Technique International conference

    The 55th Electronic Materials Conference  2013.6 

     More details

    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  • Ultra-Low-Temperature Formation of (100)- or (111)-Oriented Ge on Insulator for Flexible Electronics International conference

    The 55th Electronic Materials Conference  2013.6 

     More details

    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  • Orientation-Stabilization of Ge(111) on Insulator by Nano-Patterning in Rapid-Melting Growth Invited International conference

    13th International Workshop on Junction Technology 2013  2013.6 

     More details

    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 3-Dimensionally-Graded SiGe-on-Insulator Stacked Structures by Successive Rapid -Melting Growth International conference

    ICSI-8  2013.6 

     More details

    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Orientation-Stabilization of Ge(111) on Insulator by Nano-Patterning in Rapid-Melting Growth International conference

    ICSI-8  2013.6 

     More details

    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • In-Depth Analysis of High-Quality Ge-on-Insulator Structure Formed by Rapid-Melting Growth International conference

    ICSI-8  2013.6 

     More details

    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Low-Temperature Formation (~150oC) of Ge on Insulator through Layer-Exchange of Ge/Sn Stacked-Structures International conference

    ICSI-8  2013.6 

     More details

    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Ge-Diffusion-Controlled Gold-Induced Crystallization of (100)- or (111)-Oriented Ge for Flexible Electronics International conference

    ICSI-8  2013.6 

     More details

    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Low-Temperature Formation of SiGe Crystals by Partial-Melting Method in a-GeSn /Si(100) Structure International conference

    ICSI-8  2013.6 

     More details

    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Melting-Induced-Mixing in a-Ge/Sn/c-Ge Structures for Sn-Doped Ge Films International conference

    ICSI-8  2013.6 

     More details

    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Laterally-Graded P-Doping in GOI Structure by Ion-Implantation and Rapid- Melting- Growth International conference

    ICSI-8  2013.6 

     More details

    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Dynamics Analysis of Rapid-Melting Growth Using SiGe on Insulator International conference

    ICSI-8  2013.6 

     More details

    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Single-Crystalline SiGe Stripes on Insulating Substrate by Segregation-Free Rapid -Melting-Growth International conference

    ICSI-8  2013.6 

     More details

    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Coherent Lateral-Growth of Ge over Insulating Film by Rapid-Melting-Crystallization International conference

    ICSI-8  2013.6 

     More details

    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Recent Progress of Rapid-Melting-Growth for Laterally-Graded, Ge-Based Mixed-Crystals on Insurato Invited International conference

    Taizoh SADOH, M. Miyao

    6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar  2013.2 

     More details

    Event date: 2013.2

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Orientation-Stabilized Lateral-Growth of Ge-on-Insulator Nano-Wires by Rapid-Melting-Process International conference

    MNC 2012  2012.10 

     More details

    Event date: 2012.10 - 2012.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Hybrid-Formation of Ge-on-Insulator Structures on Si Platform by SiGe-Mixing-Triggered Rapid-Melting Growth --- A Road to Artificial Crystal --- Invited International conference

    PRiME 2012, ECS Pacific RIM Meeting 2012  2012.10 

     More details

    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  • Formation of Large Grain SiGe on Insulator by Si Segregation in Seedless-Rapid-Melting Process International conference

    PRiME 2012, ECS Pacific RIM Meeting 2012  2012.10 

     More details

    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  • Formation of Graded SiGe on Insulator by Segregation-Controlled Rapid-Melting-Growth International conference

    PRiME 2012, ECS Pacific RIM Meeting 2012  2012.10 

     More details

    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  • Formation of large-grain Ge(111) films on insulator by gold-induced layer-exchange crystallization at low temperature International conference

    Taizoh SADOH, Masanobu Miyao

    2012.10 

     More details

    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Honolulu   Country:United States  

  • Laterally Graded SiGe-on-Insulator with Universal Si Profile by Cooling-Rate-Controlled Rapid-Melting-Growth International conference

    SSDM 2012  2012.9 

     More details

    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Low-temperature Crystallization of a-Si, a-Ge and a-Si1-xGex Films by Soft X-ray Irradiation International conference

    SSDM 2012  2012.9 

     More details

    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Si Segregation Behavior in Giant SiGe Stripes on Insulator during Rapid-Melting-Growth International conference

    IUMRS-ICEM 2012  2012.9 

     More details

    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Formation of Germanium Epitaxial Layer on Insulator Using Nanostructured Rapid-Melting-Grown Template International conference

    IUMRS-ICEM 2012  2012.9 

     More details

    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Formation of N-Type Ge-on-Insulator through P-Implantation and Rapid-Melting Growth International conference

    IUMRS-ICEM 2012  2012.9 

     More details

    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Defect Free Multi-Structures of [SiGe/Insulator]2 on Si (100) platform International conference

    E-MRS 2012 Fall Meeting  2012.9 

     More details

    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Poland  

  • Stripe-Length Dependent Laterally Graded SiGe Profiles by Rapid-Melting-Growth International conference

    E-MRS 2012 Fall Meeting  2012.9 

     More details

    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Poland  

  • (111)-Oriented Large-Grain Ge on Insulator by Gold-Induced Crystallization Combined with Interfacial Layer Insertion International conference

    AM-FPD 2012  2012.7 

     More details

    Event date: 2012.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Formation of Nanostructured Germanium-on-Insulator for Integration of Multi-Functional Materials on a Panel International conference

    AM-FPD 2012  2012.7 

     More details

    Event date: 2012.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Multi-Layered SiGe-on-Insulator Structures by Rapid-Melting-Growth International conference

    AWAD 2012  2012.6 

     More details

    Event date: 2012.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Formation of (111)-oriented large-grain Ge on insulator at low-temperature by gold-induced crystallization technique International conference

    AWAD 2012  2012.6 

     More details

    Event date: 2012.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Orientation-controlled SiGe on insulator for system on panel International conference

    8th International Thin-film Transistor Conference  2012.1 

     More details

    Event date: 2012.1

    Language:English   Presentation type:Oral presentation (general)  

    Country:Portugal  

  • Catalytic-growth of Si-based thin-films for advanced semiconductor devices International conference

    International Thin Films Conference 2011  2011.11 

     More details

    Event date: 2011.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Taiwan, Province of China  

  • Formation of High-Quality Ge-on-Insulator (GOI) Networks for Next-Generation Large-Scale-Integration (LSI) International conference

    International Thin Films Conference 2011  2011.11 

     More details

    Event date: 2011.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Taiwan, Province of China  

  • Advanced Hetero-epitaxial Growth based on SiGe for Multi-functional Devices Invited International conference

    15th International Conference on Thin Films 2011  2011.11 

     More details

    Event date: 2011.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Agglomeration Free GOI Stripe Arrays with Nano-Spacing for Epitaxial Template International conference

    15th International Conference on Thin Films 2011  2011.11 

     More details

    Event date: 2011.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Orientation-Controlled Large-Grain Ge on Insulator by Au-Induced Layer-Exchange crystallization with Al2O3 Interfacial Layers International conference

    15th International Conference on Thin Films 2011  2011.11 

     More details

    Event date: 2011.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Hybrid-Formation of (100), (110), and (111) Ge-on-Insulator Structures on (100) Si Platform International conference

    SSDM 2011  2011.9 

     More details

    Event date: 2011.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Novel Growth-techniques of SiGe-based Hetero-structures for Post-scaling Devices Invited International conference

    ICSI7  2011.8 

     More details

    Event date: 2011.8 - 2011.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Belgium  

  • Low Temperature (~250 oC) Layer Exchange Crystallization of Si1-xGex (x=1-0) on Insulator for Advanced Flexible Devices International conference

    ICSI7  2011.8 

     More details

    Event date: 2011.8 - 2011.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Belgium  

  • Orientation Control of (100), (110), (111) Mesh-Patterned GOI Grown by SiGe Mixing-Triggered Rapid Melting Technique International conference

    ICSI7  2011.8 

     More details

    Event date: 2011.8 - 2011.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Belgium  

  • Effects of Dose on Activation Characteristics of P in Ge International conference

    Taizoh SADOH

    ICSI7  2011.8 

     More details

    Event date: 2011.8 - 2011.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Belgium  

  • Single-crystalline (110)-oriented Ge strips on insulating substrates by SiGe-mixing triggered rapid-melting-growth from artificial Si-micro-seeds International conference

    ICSI7  2011.8 

     More details

    Event date: 2011.8 - 2011.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Belgium  

  • Enhancement of SiN-Induced Compressive and Tensile Strains in Si-Pillars by Modulation of SiN Network Structures International conference

    ICSI7  2011.8 

     More details

    Event date: 2011.8 - 2011.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Belgium  

  • Recent Progress of SiGe-based Hetero-structure Technologies for Post-scaling Devices Invited International conference

    2011 International Workshop on Advanced Electrical Engineering and Related Topics  2011.7 

     More details

    Event date: 2011.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Germany  

  • Low-Temperature Formation of (111)Si1-xGex (0<x<1) on Insulator by Al-Induced Crystallization International conference

    AWAD2011  2011.6 

     More details

    Event date: 2011.6 - 2011.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  • Low-temperature (~250oC) Crystallization of Poly-SiGe Films by Gold-Induced Layer-Exchange Technique for Flexible Electronics International conference

    AWAD2011  2011.6 

     More details

    Event date: 2011.6 - 2011.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Korea, Republic of  

  • Lateral-liquid phase epitaxy of (101) Ge-on-insulator from Si template by metal-induced crystallization International conference

    219th ECS Meeting  2011.5 

     More details

    Event date: 2011.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Canada  

  • Au-catalyst Induced Low Temperature (~250 ℃) Layer Exchange Crystallization for SiGe on Insulator International conference

    Taizoh SADOH, Masanobu Miyao

    2011.5 

     More details

    Event date: 2011.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Montreal   Country:Canada  

  • Growth-Direction Dependent Rapid-Melting-Growth of Ge-on-Insulator (GOI) and its Application to Ge Mesh-Growth International conference

    219th ECS Meeting  2011.5 

     More details

    Event date: 2011.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Canada  

  • Si1-xGex (0 x 1) oriented-growth on transparent-insulating-substrates by Al-induced layer-exchange crystallization International conference

    ITC 2011  2011.3 

     More details

    Event date: 2011.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:United Kingdom  

  • High-Mobility Ge on Insulator (GOI) Nano-Stripes for Next Generation LSI Invited International conference

    T. Sadoh and M. Miyao

    ESciNano 2010  2010.12 

     More details

    Event date: 2010.12

    Presentation type:Oral presentation (general)  

    Country:Malaysia  

  • High-Mobility Ge on Insulator (GOI) Nano-Stripes for Next Generation LSI Invited International conference

    ESciNano2010  2010.12 

     More details

    Event date: 2010.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Malaysia  

  • Low-temperature (≤250oC) crystallization of Si on insulating substrate by gold-induced layer-exchange technique International conference

    Taizoh SADOH, Masanobu Miyao

    2010.11 

     More details

    Event date: 2010.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka   Country:Japan  

  • High-mobility Defect-free Ge Single-crystals by Rapid Melting Growth on Insulating Substrates Invited International conference

    ICSICT 2010  2010.11 

     More details

    Event date: 2010.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:China  

  • High-Mobility Ge on Insulator (GOI) by SiGe Mixing-Triggered Rapid-Melting-Growth Invited International conference

    4th International SiGe Symposium The ECS 218th  2010.10 

     More details

    Event date: 2010.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  • Single-Crystalline (100) Ge Stripes with High Mobilities Formed on Insulating Substrates by Rapid-Melting-Growth with Artificial Single-Crystal Si Seeds International conference

    SSDM2010  2010.9 

     More details

    Event date: 2010.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Uniaxial and Biaxial Strain Distribution Mapping in SOI Micro-Structures by Polarized Raman Spectroscopy International conference

    SSDM2010  2010.9 

     More details

    Event date: 2010.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Orientation control of Ge on insulator by growth-direction-selected SiGe-mixing-triggered melting growth International conference

    ISTESNE 2010  2010.6 

     More details

    Event date: 2010.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Al-Induced Oriented-Crystallization of Si Films on Quartz and Its Application to Epitaxial-Template for Ge Growth International conference

    5th ISTDM2010  2010.5 

     More details

    Event date: 2010.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Sweden  

  • Growth-Direction-Dependent Characteristics of Ge-on-Insulator by SiGe Mixing Triggered Melting Growth International conference

    5th ISTDM2010  2010.5 

     More details

    Event date: 2010.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Sweden  

  • Strained Single-Crystal GOI (Ge on Insulator) Arrays by Rapid-Melting Growth from Si (111) Micro-Seeds International conference

    5th ISTDM2010  2010.5 

     More details

    Event date: 2010.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Sweden  

  • SiGe Mixing-Triggered Melting-Growth for Orientation-Controlled Ge on Transparent Insulating Substrates International conference

    5th ISTDM2010  2010.5 

     More details

    Event date: 2010.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Sweden  

  • SiGe Mixing-Triggered Liquid-Phase Epitaxy for Defect-Free GOI (Ge on Insulator) Invited International conference

    5th International WorkShop on New Group IV Semiconductor Nanoelectronics  2010.1 

     More details

    Event date: 2010.1

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Interfacial Oxide Layer Controlled Al-Induced Crystallization of Si on Insulator for Epitaxial Template International conference

    5th International WorkShop on New Group IV Semiconductor Nanoelectronics  2010.1 

     More details

    Event date: 2010.1

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Orientation-controlled poly-SiGe on insulator by Aluminum-induced crystallization International conference

    2010.1 

     More details

    Event date: 2010.1

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Atomically Controlled Epitaxy of Ferromagnetic Silicide on SiGe for SiGe-Channel Schottky Source/Drain Spin Transistor Invited International conference

    T. Sadoh, K. Ueda, Y. Ando, Y. Kishi, K. Hamaya, Y. Maeda, and M. Miyao

    NSC-JST Nano Device Workshop  2008.7 

     More details

    Event date: 2008.7

    Presentation type:Oral presentation (general)  

    Country:Taiwan, Province of China  

▼display all

Industrial property rights

Patent   Number of applications: 1   Number of registrations: 0
Utility model   Number of applications: 0   Number of registrations: 0
Design   Number of applications: 0   Number of registrations: 0
Trademark   Number of applications: 0   Number of registrations: 0

Professional Memberships

  • The Institute of Electronics, Information and Communication Engineers of Japan

  • The Institute of Electrical and Electronics Engineers

  • The Institute of Electrical Engineers of Japan

  • The Japan Society of Applied Physics

  • The Electrochemical Society

Committee Memberships

  • 電子情報通信学会   代議員   Domestic

    2024.4 - 2025.3   

  • Organizer   Domestic

    2023.4 - 2025.3   

  • 電子情報通信学会   九州支部庶務幹事   Domestic

    2023.4 - 2025.3   

  • 電子デバイス界面テクノロジー研究会   実行・プログラム委員   Domestic

    2018.4 - 2030.3   

  • Organizer   Domestic

    2017.4 - 2030.3   

  • 応用物理学会薄膜・表面物理分科会   編集幹事   Domestic

    2017.4 - 2030.3   

  • 国際固体素子・材料コンファレンス   論文委員   Foreign country

    2016.1 - 2030.5   

  • Organizer   Domestic

    2010.5 - 2030.5   

  • 応用物理学会   九州支部   Domestic

    2010.5 - 2030.5   

  • Organizer   Domestic

    2009.7 - 2030.6   

  • プログラム委員   Foreign country

    2008.10 - 2030.5   

  • Organizer   Domestic

    2007.5 - 2009.5   

  • 電気学会   九州支部総務企画幹事   Domestic

    2007.5 - 2009.5   

  • Organizer   Domestic

    2004.3 - 2030.6   

▼display all

Academic Activities

  • Screening of academic papers

    Role(s): Peer review

    2023

     More details

    Type:Peer review 

    Number of peer-reviewed articles in foreign language journals:19

    Proceedings of International Conference Number of peer-reviewed papers:50

  • Screening of academic papers

    Role(s): Peer review

    2022

     More details

    Type:Peer review 

    Number of peer-reviewed articles in foreign language journals:25

    Proceedings of International Conference Number of peer-reviewed papers:50

  • Screening of academic papers

    Role(s): Peer review

    2021

     More details

    Type:Peer review 

    Number of peer-reviewed articles in foreign language journals:18

    Proceedings of International Conference Number of peer-reviewed papers:50

  • Screening of academic papers

    Role(s): Peer review

    2020

     More details

    Type:Peer review 

    Number of peer-reviewed articles in foreign language journals:32

    Proceedings of International Conference Number of peer-reviewed papers:50

  • Screening of academic papers

    Role(s): Peer review

    2019

     More details

    Type:Peer review 

    Number of peer-reviewed articles in foreign language journals:26

    Proceedings of International Conference Number of peer-reviewed papers:50

  • Screening of academic papers

    Role(s): Peer review

    2018

     More details

    Type:Peer review 

    Number of peer-reviewed articles in foreign language journals:37

    Proceedings of International Conference Number of peer-reviewed papers:50

  • Screening of academic papers

    Role(s): Peer review

    2017

     More details

    Type:Peer review 

    Number of peer-reviewed articles in foreign language journals:20

    Proceedings of International Conference Number of peer-reviewed papers:50

  • 座長(Chairmanship) International contribution

    ITC’10  ( 姫路 ) 2010.1

     More details

    Type:Competition, symposium, etc. 

  • 座長(Chairmanship) International contribution

    ( 名古屋 ) 2008.12

     More details

    Type:Competition, symposium, etc. 

  • 座長(Chairmanship) International contribution

    ( 東京 ) 2008.7

     More details

    Type:Competition, symposium, etc. 

  • 代表幹事

    第8回シリサイド系半導体夏の学校  ( 滋賀県彦根市 ) 2004.7

     More details

    Type:Competition, symposium, etc. 

    Number of participants:50

  • 現地実行委員 International contribution

    第4回Siエピタキシーとヘテロ構造に関する国際会議(ICSi-4)  ( 兵庫県津名郡東浦町 ) 2004.5 - 2004.6

     More details

    Type:Competition, symposium, etc. 

    Number of participants:200

  • 現地実行委員 International contribution

    第6回半導体微細構造のビーム注入診断技術に関する国際会議(BIAMS2000)  ( 福岡市 ) 2000.11

     More details

    Type:Competition, symposium, etc. 

    Number of participants:500

  • 該当なし

    Role(s): Review, evaluation

     More details

    Type:Scientific advice/Review 

▼display all

Research Projects

  • ハーフメタル強磁性体/Si界面の原子層制御による室温動作スピントランジスタの創出

    Grant number:22360127  2010 - 2012

    日本学術振興会  科学研究費助成事業  基盤研究(B)

      More details

    Authorship:Coinvestigator(s)  Grant type:Scientific research funding

  • 金属触媒成長法による高キャリア移動度Ge結晶/絶縁膜の創製

    2010

    (財)材料科学研究助成基金「材料科学研究助成」

      More details

    Authorship:Principal investigator  Grant type:Contract research

  • フレキシブル半導体上におけるスピン機能創出とトランジスタ応用

    Grant number:21656005  2009 - 2011

    科学研究費助成事業  挑戦的萌芽研究

      More details

    Authorship:Coinvestigator(s)  Grant type:Scientific research funding

  • ガラス上における歪み擬似単結晶SiGeの創製と薄膜トランジスタの高速化

    Grant numb