Updated on 2024/07/28

Information

 

写真a

 
YAJIMA TAKEAKI
 
Organization
Faculty of Information Science and Electrical Engineering Department of Electronics Associate Professor
School of Engineering Department of Electrical Engineering and Computer Science(Joint Appointment)
Graduate School of Information Science and Electrical Engineering Department of Electrical and Electronic Engineering(Joint Appointment)
Joint Graduate School of Mathematics for Innovation (Joint Appointment)
Title
Associate Professor
Contact information
メールアドレス
Tel
0928023759
Profile
Research and education on the fields of oxide thin films, electronic devices and circuits, and neuromorphic systems.
External link

Degree

  • Doctor (Science)

Research History

  • 2012.8~2020.9 東京大学 大学院工学系研究科 マテリアル工学専攻 助教

Research Interests・Research Keywords

  • Research theme:Edge information processing using small learning circuit

    Keyword:echo state network, extreme learning machine, reservoir computing, reinforcement learning

    Research period: 2022.10

  • Research theme:Rhythmic control of switching circuits for low power application

    Keyword:neuron circuit, asynchronous, DCDC converter, energy harvesting, analog CMOS

    Research period: 2020.10

  • Research theme:Short-term memory device based on protons and electrons

    Keyword:oxide thin film, heterostructure, semiconductor, hydrogen

    Research period: 2020.10

  • Research theme:Digital temperature sensor using phase transition materials

    Keyword:metal-insulator transition, VO2, vanadium oxide, thermistor, binary

    Research period: 2020.10

Awards

  • 文部科学大臣表彰若手科学者賞

    2022.4   文部科学省   酸化物機能に基づく省電力情報処理基盤の研究

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    電子回路の低消費電力化は最重要課題である。しかし現状シリコンデバイスの優位性が高すぎるあまり既存の枠組みを超えるのが難しく、「異分野融合」が必須である。
    氏は、シリコン技術に、「機能性酸化物」と「神経回路的アーキテクチャ」を導入し、電子回路の低消費電力化技術を構築した。酸化物固有の相転移現象を利用することで低消費電力化と高速化を両立できることを示し、さらに神経回路的アーキテクチャによって無駄な回路動作を排除し消費電力を削減できることを示した。
    本研究成果は、新しい低消費電力化技術として、現実世界とデータ空間をリンクする次世代社会インフラの一翼を担うと期待される。

  • The Oxide Electronics Prize for Excellency in Research

    2019.10   International Workshop on Oxide Electronics   Excellency in Research in oxide electronics

  • SSDM Young Researcher Award

    2019.9   SSDM 2019   Young Researcher Award

  • さきがけ交流会 ポスター賞

    2019.1   科学技術振興機構   神経回路にヒントを得たsub-nW超低消費電力回路の開発

  • 第40回 応用物理学会論文賞

    2018.9   日本応用物理学会   Reexamination of Fermi level pinning for controlling Schottky barrier height at metal/Ge interface.

  • NF基金 研究開発奨励賞

    2017.11   エヌエフ基金   酸化物の金属絶縁体転移を用いた低消費電力電子デバイスの研究

  • 応用物理学会 ポスター賞

    2017.9   日本応用物理学会   Fabrication of Phase-Transition Neuron Firing by Joule Heat Accumulation

  • The 8th Silicon Technology Division Award

    2017.9   The 8th Silicon Technology Division Award

  • ゲートスタック研究会 安田賞

    2014.2   第19回ゲートスタック研究会   VO2エピタキシャル薄膜を用いたVO2相転移の不均質性の抑制

  • 第26回 独創性を拓く 先端技術大賞

    2012.7   フジサインケイビジネスアイ先端技術大賞   ペロブスカイト酸化物における界面ダイポールの設計とトランジスタへの応用 ~新たな酸化物デバイスを目指して~

  • PCSI Young Scientist Award

    2012.2   Conference on the Physics and Chemistry of Surfaces and Interfaces   Young Scientist Award

  • MRS Spring, Graduate Student Award

    2011.4   Material Research Society   Graduate Student Award

  • PFシンポジウム ポスター賞

    2011.3   酸化物ヘテロ界面の界面ダイポール制御によるバンドアラインメントの制御

  • 応用物理学会 講演奨励賞

    2010.9   日本応用物理学会   (SrAlO3)-負電荷挿入によるSrRuO3/Nb:SrTiO3(001)ショットキー障壁高さの増大

  • 東京大学 応用物理学科 卒業論文賞

    2007.3   東京大学 工学部 物理工学科   LaMnO3/SrTiO3界面の電子的・イオン的再構成

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Papers

  • Review of solid-state proton devices for neuromorphic information processing Invited Reviewed International journal

    Satya Prakash Pati, Takeaki Yajima

    Jpn. J. Appl. Phys.   63 ( 3 )   030801 - 030801   2024.3

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    Review of solid-state proton devices for neuromorphic information processing
    Abstract

    This is a review of proton devices for neuromorphic information processing. While solid-state devices utilizing various ions have been widely studied for non-volatile memory, the proton, which is the smallest ion, has been relatively overlooked despite its advantage of being able to move through various solids at RT. With this advantage, it should be possible to control proton kinetics not only for fast analog memory function, but also for real-time neuromorphic information processing in the same time scale as humans. Here, after briefing the neuromorphic concept and the basic proton behavior in solid-state devices, we review the proton devices that have been reported so far, classifying them according to their device structures. The benchmark clearly shows the time scales of proton relaxation ranges from several milliseconds to hundreds of seconds, and completely match the time scales for expected neuromorphic functions. The incorporation of proton degrees of freedom in electronic devices will also facilitate access to electrochemical phenomena and subsequent phase transitions, showing great promise for neuromorphic information processing in the real-time and highly interactive edge devices.

    DOI: 10.35848/1347-4065/ad297b

  • Resonant frequency modulation in inductive vibration power generator via resistive impedance control

    Takeaki Yajima

    IEEE Transactions on Power Electronics   39 ( 1 )   1269 - 1278   2023.12

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    Language:Others   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/tpel.2023.3322704

  • Zero-dimensionality of a scaled-down VO2 metal-insulator transition via high-resolution electrostatic gating Reviewed

    Takeaki Yajima, Yusuke Samata, Satoshi Hamasuna, Satya Prakash Pati, Akira Toriumi

    NPG Asia Materials   15   39-1 - 39-6   2023.6

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    Zero-dimensionality of a scaled-down VO2 metal-insulator transition via high-resolution electrostatic gating

    DOI: 10.1038/s41427-023-00486-9

  • Controlling proton volatility in SiO2-capped TiO2 thin films for neuromorphic functionality

    T. Yajima, S. P. Pati

    Applied Physics Letters   120 ( 24 )   241601 - 241601   2022.6

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    Language:Others   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0094481

  • Ultra-low-power switching circuits based on a binary pattern generator with spiking neurons Reviewed International journal

    Takeaki Yajima

    Scientific Reports   12   1150   2022.1

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    Ultra-low-power switching circuits based on a binary pattern generator with spiking neurons

  • Observation of the Pinch‐Off Effect during Electrostatically Gating the Metal‐Insulator Transition Reviewed International journal

    8   2100842 - 2100842   2021.11

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    Language:Others   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/aelm.202100842

  • Regulating phase transformation kinetics via redox reaction in ferroelectric Ge-doped HfO2 Reviewed

    T. Yajima, T. Nishimura, S. Migita, T. Tanaka, K. Uchida, A. Toriumi

    Applied Physics Letters   117 ( 18 )   182902 - 182902   2020.11

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    DOI: 10.1063/5.0028620

  • Modulation of VO 2 Metal–Insulator Transition by Ferroelectric HfO 2 Gate Insulator Reviewed

    6 ( 5 )   1901356 - 1901356   2020.5

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    Language:Others   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/aelm.201901356

  • High-speed low-energy heat signal processing via digital-compatible binary switch with metal-insulator transitions. Reviewed

    T. Yajima, T. Tanaka, Y. Samata, K. Uchida, A. Toriumi

    International Electron Devices Meeting (IEDM)   903 - 906   2019.12

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    High-speed low-energy heat signal processing via digital-compatible binary switch with metal-insulator transitions.

    DOI: 10.1109/IEDM19573.2019.8993502

  • Hydrogenation of the wide-gap oxide semiconductor as a room-temperature and 3D-compatible electron doping technique. Reviewed

    T. Yajima, G. Oike, S. Yamaguchi, S. Miyoshi, T. Nishimura, A. Toriumi

    AIP Advances   8   115133   2018.9

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    Hydrogenation of the wide-gap oxide semiconductor as a room-temperature and 3D-compatible electron doping technique.

    DOI: 10.1063/1.5055302

  • Analog Spike Processing with High Scalability and Low Energy Consumption Using Thermal Degree of Freedom in Phase Transition Materials. Reviewed

    T. Yajima, T. Nishimura, and A, Toriumi

    VLSI (Technology)   18   27 - 28   2018.7

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    Analog Spike Processing with High Scalability and Low Energy Consumption Using Thermal Degree of Freedom in Phase Transition Materials.

    DOI: 10.1109/VLSIT.2018.8510649

  • Identifying the Collective Length in VO2 Metal-Insulator Transitions Reviewed

    Takeaki Yajima, Tomonori Nishimura, Akira Toriumi

    SMALL   13 ( 12 )   2017.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/smll.201603113

  • Functional Passive Material VO2 for Analogue Signal Processing with High-Speed, Low Power, and Robust Performance Reviewed International journal

    T. Yajima, T. Nishimura, A. Toriumi

    Technical Digest - International Electron Devices Meeting, IEDM   2016.12

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    DOI: 10.1109/IEDM.2016.7838540

  • Independent control of phases and defects in TiO2 thin films for functional transistor channels Reviewed

    Takeaki Yajima, Go Oike, Tomonori Nishimura, Akira Toriumi

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   213 ( 8 )   2196 - 2202   2016.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssa.201600006

  • Positive-bias gate-controlled metal-insulator transition in ultrathin VO2 channels with TiO2 gate dielectrics Reviewed

    Takeaki Yajima, Tomonori Nishimura, Akira Toriumi

    NATURE COMMUNICATIONS   6   2015.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/ncomms10104

  • Controlling band alignments by artificial interface dipoles at perovskite heterointerfaces Reviewed International journal

    Yajima, Takeaki, Hikita, Yasuyuki, Minohara, Makoto, Bell, Christopher, Mundy, Julia A., Kourkoutis, Lena F., Muller, David A., Kumigashira, Hiroshi, Oshima, Masaharu, Hwang, Harold Y

    Nature Communications   2015.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/ncomms7759

  • Drastic change in electronic domain structures via strong elastic coupling in VO2 films Reviewed

    Takeaki Yajima, Yuma Ninomiya, Tomonori Nishimura, Akira Toriumi

    PHYSICAL REVIEW B   91 ( 20 )   2015.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevB.91.205102

  • Enhanced Electrical Transparency by Ultrathin LaAlO3 Insertion at Oxide Metal/Semiconductor Heterointerfaces Reviewed International journal

    Yajima, Takeaki, Minohara, Makoto, Bell, Christopher, Kumigashira, Hiroshi, Oshima, Masaharu, Hwang, Harold Y., Hikita, Yasuyuki

    Nano Letters   2015.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/nl504169m

  • A heteroepitaxial perovskite metal-base transistor Reviewed

    Takeaki Yajima, Yasuyuki Hikita, Harold Y. Hwang

    NATURE MATERIALS   10 ( 3 )   198 - 201   2011.3

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    DOI: 10.1038/NMAT2946

  • Design of The Ultra-Low-Power Driven VMM Configurations for μW Scale IoT Devices

    2023.12

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    DOI: 10.1109/mcsoc60832.2023.00018

  • Long-time-constant leaky-integrating oxygen-vacancy drift-diffusion FET for human-interactive spiking reservoir computing

    Hisashi Inoue, Hiroto Tamura, Ai Kitoh, Xiangyu Chen, Zolboo Byambadorj, Takeaki Yajima, Yasushi Hotta, Tetsuya Iizuka, Gouhei Tanaka, Isao H. Inoue

    2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)   2023.6

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    DOI: 10.23919/vlsitechnologyandcir57934.2023.10185412

  • CMOS-based area-and-power-efficient neuron and synapse circuits for time-domain analog spiking neural networks Reviewed

    Xiangyu Chen, Zolboo Byambadorj, Takeaki Yajima, Hisashi Inoue, Isao H. Inoue, Tetsuya Iizuka

    Applied Physics Letters   122   074102   2023.2

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    CMOS-based area-and-power-efficient neuron and synapse circuits for time-domain analog spiking neural networks

    DOI: 10.1063/5.0136627

  • An ultra-compact leaky integrate-and-fire neuron with long and tunable time constant utilizing pseudo resistors for spiking neural networks

    Xiangyu Chen, Takeaki Yajima, Isao H. Inoue, Tetsuya Iizuka

    Japanese Journal of Applied Physics   61 ( SC )   SC1051 - SC1051   2022.5

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    DOI: 10.35848/1347-4065/ac43e4

  • Self-synchronized Rectifier with Phase Information Extracted from Vibration Energy Harvester Reviewed

    Hang Yin, Takeaki Yajima

    Sensors and Materials   34 ( 5 )   1899 - 1907   2022.5

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    DOI: 10.18494/SAM3863

  • Atomistic simulation study of impacts of surface carrier scatterings on carrier transport in Pt nanosheets Reviewed

    Takahisa Tanaka, Taro Kato, Takeaki Yajima, Ken Uchida

    IEEE Electron Device Letters   1057 - 1060   2021.5

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    DOI: 10.1109/led.2021.3077466

  • Temperature dependence of resistivity increases induced by thiols adsorption in gold nanosheets

    Taro Kato, Takahisa Tanaka, Takeaki Yajima, Ken Uchida

    Japanese Journal of Applied Physics   60 ( SB )   SBBH13 - SBBH13   2021.2

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    Temperature dependence of resistivity increases induced by thiols adsorption in gold nanosheets

    DOI: 10.35848/1347-4065/abd6de

  • Impact of defects in self-assembled monolayer on humidity sensing by molecular functionalized transistors Reviewed

    T. Tanaka, T. Yajima, K. Uchida

    Jpn. J. Appl. Phys.   2020.3

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    Impact of defects in self-assembled monolayer on humidity sensing by molecular functionalized transistors

  • Understanding of Fermi level pinning at metal/germanium interface based on semiconductor structure Reviewed

    X. Lu, T. Nishimura, T. Yajima, A. Toriumi

    APEX   13   031003   2020.3

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    Understanding of Fermi level pinning at metal/germanium interface based on semiconductor structure

  • Reaction of GeO2 with Ge and crystallization of GeO2 on Ge Reviewed

    M. Xie, T. Nishimura, T. Yajima, A. Toriumi

    J. Appl. Phys.   127   024101   2020.2

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    Reaction of GeO2 with Ge and crystallization of GeO2 on Ge

  • Electron‐Doping Mottronics in Strongly Correlated Perovskite Reviewed

    32 ( 6 )   1905060   2019.12

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  • Heteroepitaxial vertical perovskite hot-electron transistors down to the monolayer limit. Reviewed

    B. Kim, Y. Hikita, T. Yajima, H. Hwang

    Nature Commun.   10   5312   2019.12

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    Heteroepitaxial vertical perovskite hot-electron transistors down to the monolayer limit.

  • Almost pinning-free bismuth/Ge and/Si interfaces Reviewed

    Tomonori Nishimura, Xuan Luo, Soshi Matsumoto, Takeaki Yajima, Akira Toriumi

    AIP ADVANCES   9 ( 9 )   2019.9

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    DOI: 10.1063/1.5115535

  • Delta-temperatural electronic transportation achieved in metastable perovskite rare-earth nickelate thin films Reviewed

    Chen Jikun, Hu Haiyang, Yajima Takeaki, Wang Jiaou, Ge Binghui, Dong Hongliang, Jiang Yong, Chen Nuofu

    JOURNAL OF MATERIALS CHEMISTRY C   7 ( 26 )   8101 - 8108   2019.7

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    Delta-temperatural electronic transportation achieved in metastable perovskite rare-earth nickelate thin films

    DOI: 10.1039/c9tc02327e

  • Overcoming synthetic metastabilities and revealing metal-to-insulator transition & thermistor bi-functionalities for d-band correlation perovskite nickelates Reviewed

    Chen Jikun, Hu Haiyang, Wang Jiaou, Yajima Takeaki, Ge Binghui, Ke Xinyou, Dong Hongliang, Jiang Yong, Chen Nuofu

    MATERIALS HORIZONS   6 ( 4 )   788 - 795   2019.4

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    Overcoming synthetic metastabilities and revealing metal-to-insulator transition & thermistor bi-functionalities for d-band correlation perovskite nickelates

    DOI: 10.1039/c9mh00008a

  • Inhomogeneous barrier heights at dipole-controlled SrRuO3/Nb:SrTiO3 Schottky junctions Reviewed

    T. Yajima, M. Minohara, C. Bell, H. Y. Hwang, Y. Hikita

    Applied Physics Letters   11   221603   2018.11

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    DOI: 10.1063/1.5052712

  • Anomalous Spectral Shape Evolution of Ge Raman Shift in Oxidation of SiGe. Reviewed

    Y Noma, W Song, T Nishimura, T Yajima, A Toriumi

    IEEE Electron Devices Technology and Manufacturing (EDTM)   2018.3

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    Anomalous Spectral Shape Evolution of Ge Raman Shift in Oxidation of SiGe.

    DOI: 10.1109/EDTM.2018.8421461

  • Strain Tuning in Complex Oxide Epitaxial Films Using an Ultrathin Strontium Aluminate Buffer Layer Reviewed

    Di Lu, Yasuyuki Hikita, David J. Baek, Tyler A. Merz, Hiroki Sato, Bongju Kim, Takeaki Yajima, Christopher Bell, Arturas Vailionis, Lena F. Kourkoutis, Harold Y. Hwang

    Physica Status Solidi - Rapid Research Letters   12 ( 3 )   2018.3

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    DOI: 10.1002/pssr.201700339

  • Rigidity enhancement of GeO2by Y doping for reliable Ge gate stacks Reviewed

    Tomonori Nishimura, Xiaoyu Tang, Takeaki Yajima, Akira Toriumi

    Electron Devices Technology and Manufacturing Conference (EDTM)   2018.3

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    Rigidity enhancement of GeO2by Y doping for reliable Ge gate stacks

    DOI: 10.1109/EDTM.2018.8421529

  • Potential Influence of Surface Atomic Disorder on Fermi-level Pinning at Metal/SiGe Interface Reviewed

    X Luo, T Nishimura, T Yajima, A Toriumi

    Electron Devices Technology and Manufacturing (EDTM)   2018.3

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    Potential Influence of Surface Atomic Disorder on Fermi-level Pinning at Metal/SiGe Interface

    DOI: 10.1109/EDTM.2018.8421410

  • Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm Reviewed

    Xuan Tian, Shigehisa Shibayama, Tomonori Nishimura, Takeaki Yajima, Shinji Migita, Akira Toriumi

    Applied Physics Letters   112 ( 10 )   2018.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5017094

  • Sub-nm EOT ferroelectric HfO2 on p+Ge with highly reliable field cycling properties Reviewed

    X. Tian, L. Xu, S. Shibayama, T. Nishimura, T. Yajima, S. Migita, A. Toriumi

    Technical Digest - International Electron Devices Meeting, IEDM   17   37.1.1 - 37.1.4   2018.1

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    DOI: 10.1109/IEDM.2017.8268508

  • Dipole-correlated carrier transportation and orbital reconfiguration in strain-distorted SrNbxTi1-xO3/KTaO3 Reviewed

    Jikun Chen, Xinyou Ke, Jiaou Wang, Takeaki Yajima, Haijie Qian, Song Sun

    PHYSICAL CHEMISTRY CHEMICAL PHYSICS   19 ( 44 )   29913 - 29917   2017.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1039/c7cp06495k

  • Reconsideration of Metal Work Function at Metal/Semiconductor Interface Reviewed

    Nishimura Tomonori, Yajima Takeaki, Toriumi Akira

    SEMICONDUCTOR PROCESS INTEGRATION 10   80 ( 4 )   107 - 112   2017.10

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    Reconsideration of Metal Work Function at Metal/Semiconductor Interface
    Fermi-level pinning (FLP) at metal/semiconductor interface, which is deviated from ideal Schottky-Mott limit, has been discussed for several decades based on various intrinsic and extrinsic models, and it has commonly been considered that the origin of FLP is ascribed only to semiconductor side. In this paper, we discuss FLP from the viewpoint of work function of metal. We focus on a fact that both of surface term of vacuum work function at metal/vacuum interface and intrinsic metal induced gap states (MIGS) at metal/semiconductor interface are described as a common physics of wave function tailing from metal. This suggests that the MIGS is regarded as a surface term of work function of metal at metal/semiconductor interface rather than interface states. Namely, the FLP caused by MIGS seems corresponded to modulation of work function. We also discuss how to control the work function modulation from both semiconductor and metal sides taking germanium as an example.

    DOI: 10.1149/08004.0107ecst

  • Kinetic pathway of the ferroelectric phase formation in doped HfO2 films Reviewed

    Lun Xu, Tomonori Nishimura, Shigehisa Shibayama, Takeaki Yajima, Shinji Migita, Akira Toriumi

    JOURNAL OF APPLIED PHYSICS   122 ( 12 )   2017.9

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    DOI: 10.1063/1.5003918

  • Thermal oxidation kinetics of germanium Reviewed

    X. Wang, T. Nishimura, T. Yajima, A. Toriumi

    APPLIED PHYSICS LETTERS   111 ( 5 )   052101   2017.7

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    DOI: 10.1063/1.4997298

  • n(+)Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating Interlayer Reviewed

    Tony Chi Liu, Shoichi Kabuyanagi, Tomonori Nishimura, Takeaki Yajima, Akira Toriumi

    IEEE ELECTRON DEVICE LETTERS   38 ( 6 )   716 - 719   2017.6

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    DOI: 10.1109/LED.2017.2699658

  • Thermodynamic understanding and analytical modeling of interfacial SiO2 scavenging in HfO2 gate stacks on Si, SiGe, and SiC Reviewed

    Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Akira Toriumi

    APPLIED PHYSICS LETTERS   110 ( 14 )   2017.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4979711

  • Ultrahigh Thermoelectric Performance in SrNb0.2Ti0.8O3 Oxide Films at a Submicrometer-Scale Thickness Reviewed

    Jikun Chen, Hongyi Chen, Feng Hao, Xinyou Ke, Nuofu Chen, Takeaki Yajima, Yong Jiang, Xun Shi, Kexiong Zhou, Max Dobeli, Tiansong Zhang, Binghui Ge, Hongliang Dong, Huarong Zeng, Wenwang Wu, Lidong Chen

    ACS ENERGY LETTERS   2 ( 4 )   915 - 921   2017.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acsenergylett.7b00197

  • General relationship for cation and anion doping effects on ferroelectric HfO2 formation Reviewed

    L. Xu, S. Shibayama, K. Izukashi, T. Nishimura, T. Yajima, S. Migita, A. Toriumi

    Technical Digest - International Electron Devices Meeting, IEDM   25.2.1 - 25.2.4   2017.1

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    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1109/IEDM.2016.7838477

  • General relationship for cation and anion doping effects on ferroelectric HfO2 formation Reviewed International journal

    L. Xu, S. Shibayama, K. Izukashi, T. Nishimura, T. Yajima, S. Migita, A. Toriumi

    Technical Digest - International Electron Devices Meeting, IEDM   2016.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/IEDM.2016.7838477

  • Ferroelectric phase stabilization of HfO2 by nitrogen doping Reviewed

    Lun Xu, Tomonori Nishimura, Shigehisa Shibayama, Takeaki Yajima, Shinji Migita, Akira Toriumi

    APPLIED PHYSICS EXPRESS   9 ( 9 )   2016.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/APEX.9.091501

  • Anomalous electrical properties of Au/SrTiO3 interface Reviewed

    Lun Xu, Takeaki Yajima, Tomonori Nishimura, Akira Toriumi

    JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 8 )   2016.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.55.08PB04

  • Reexamination of Fermi level pinning for controlling Schottky barrier height at metal/Ge interface Reviewed

    Tomonori Nishimura, Takeaki Yajima, Akira Toriumi

    APPLIED PHYSICS EXPRESS   9 ( 8 )   2016.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/APEX.9.081201

  • Ferroelectricity of nondoped thin HfO2 films in TiN/HfO2/TiN stacks Reviewed

    Tomonori Nishimura, Lun Xu, Shigehisa Shibayama, Takeaki Yajima, Shinji Migita, Akira Toriumi

    JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 8 )   2016.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.55.08PB01

  • Recent Progress of Junction Technology for Germanium CMOS Reviewed

    Tomonori Nishimura, Choong Hyun Lee, Toshimitsu Nakamura, Takeaki Yajima, Kosuke Nagashio, Koji Kita, Akira Toriumi

    2015 15TH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT)   65 - 68   2016.5

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    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1109/IWJT.2015.7467098

  • Experimental evidence of zone-center optical phonon softening by accumulating holes in thin Ge Reviewed

    Shoichi Kabuyanagi, Tomonori Nishimura, Takeaki Yajima, Akira Toriumi

    AIP ADVANCES   6 ( 1 )   2016.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4941072

  • Gate-bias dependent phonon softening observed in Ge MOSFETs Reviewed

    Shoichi Kabuyanagi, Tomonori Nishimura, Takeaki Yajima, Akira Toriumi

    ECS Transactions   69 ( 10 )   75 - 80   2015.10

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    DOI: 10.1149/06910.0075ecst

  • Significance of Kinetic-linkage of Oxygen Vacancy with SiO2/Si Interface for SiO2-IL Scavenging in HfO2 Gate Stacks Reviewed

    Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Akira Toriumi

    2015 SILICON NANOELECTRONICS WORKSHOP (SNW)   2015.9

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  • Study of Si kinetics in interfacial SiO2 scavenging in HfO2 gate stacks Reviewed

    Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Akira Toriumi

    APPLIED PHYSICS EXPRESS   8 ( 6 )   2015.6

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    DOI: 10.7567/APEX.8.061304

  • Effect of Free Carrier Accumulation or Depletion on Zone-center Vibrational Mode in Ge Reviewed

    Shoichi Kabuyanagi, Tomonori Nishimura, Takeaki Yajima, Akira Toriumi

    2015 SILICON NANOELECTRONICS WORKSHOP (SNW)   2015.6

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  • Nondestructive characterization of oxide/germanium interface by direct-gap photoluminescence analysis Reviewed

    Shoichi Kabuyanagi, Tomonori Nishiumura, Takeaki Yajima, Akira Toriumi

    APPLIED PHYSICS EXPRESS   8 ( 5 )   2015.5

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    DOI: 10.7567/APEX.8.051301

  • Analytical Formulation of SiO<inf>2</inf>-IL scavenging in HfO<inf>2</inf>/SiO<inf>2</inf>/Si gate stacks - A key is the SiO<inf>2</inf>/Si interface reaction Reviewed

    Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi

    Technical Digest - International Electron Devices Meeting, IEDM   2015- ( February )   21.2.1 - 21.2.4   2015.2

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    DOI: 10.1109/IEDM.2014.7047094

  • Effect of Si substrate on interfacial SiO2 scavenging in HfO2/SiO2/Si stacks Reviewed

    Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi

    APPLIED PHYSICS LETTERS   105 ( 18 )   2014.11

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    DOI: 10.1063/1.4901172

  • Atomic-scale Planarization of Ge (111), (110) and (100) Surfaces Reviewed

    Tomonori Nishimura, ChoongHyun Lee, Takeaki Yajima, Kosuke Nagashio, Akira Toriumi

    2014 7TH INTERNATIONAL SILICON-GERMANIUM TECHNOLOGY AND DEVICE MEETING (ISTDM)   127 - 128   2014.8

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    DOI: 10.1109/ISTDM.2014.6874698

  • Kinetic Model for Scavenging of SiO2 Interface Layer in HfO2 Gate Stacks Reviewed

    Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi

    2014 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)   2014.6

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    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1109/SNW.2014.7348532

  • Atomically flat planarization of Ge(100), (110), and (111) surfaces in H-2 annealing Reviewed

    Tomonori Nishimura, Shoichi Kabuyanagi, Wenfeng Zhang, Choong Hyun Lee, Takeaki Yajima, Kosuke Nagashio, Akira Toriumi

    APPLIED PHYSICS EXPRESS   7 ( 5 )   2014.5

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    DOI: 10.7567/APEX.7.051301

  • HfO2-assisted SiO2 reduction in HfO2/SiO2/Si stacks Reviewed

    Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi

    THIN SOLID FILMS   557   272 - 275   2014.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2013.10.142

  • Visualizing the interfacial evolution from charge compensation to metallic screening across the manganite metal-insulator transition Reviewed

    Julia A. Mundy, Yasuyuki Hikita, Takeaki Hidaka, Takeaki Yajima, Takuya Higuchi, Harold Y. Hwang, David A. Muller, Lena F. Kourkoutis

    NATURE COMMUNICATIONS   5   2014.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/ncomms4464

  • High electron mobility (16 cm2/Vsec) FETs with high on/off ratio (10^6) and highly conductive films (10^2 S/cm) by chemical doping in very thin (∼20 nm) TiO2 films on thermally grown SiO2 Reviewed

    2013.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/IEDM.2013.6724610

  • Atomically Flat Germanium (111) Surface by Hydrogen Annealing Reviewed

    T. Nishimura, S. Kabuyanagi, C. H. Lee, T. Yajima, K. Nagashio, A. Toriumi

    ULSI PROCESS INTEGRATION 8   58 ( 9 )   201 - 206   2013.10

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    Language:English   Publishing type:Research paper (other academic)  

    DOI: 10.1149/05809.0201ecst

  • Coexistence of two-dimensional and three-dimensional Shubnikov–de Haas oscillations in Ar+-irradiated KTaO3 Reviewed

    88 ( 8 )   085102   2013.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevB.88.085102

  • Hot electron transport in a strongly correlated transition-metal oxide Reviewed

    Kumari Gaurav Rana, Takeaki Yajima, Subir Parui, Alexander F. Kemper, Thomas P. Devereaux, Yasuyuki Hikita, Harold Y. Hwang, Tamalika Banerjee

    SCIENTIFIC REPORTS   3   2013.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/srep01274

  • ペロブスカイト酸化物における界面ダイポールの設計とトランジスタへの応用

    矢嶋赳彬

    先端技術大賞   2012.6

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    Language:Others  

  • Reentrant insulating state in ultrathin manganite films Reviewed

    Bongju Kim, Daeyoung Kwon, Takeaki Yajima, Christopher Bell, Yasuyuki Hikita, Bog G. Kim, Harold Y. Hwang

    APPLIED PHYSICS LETTERS   99 ( 9 )   2011.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3628659

  • Charge Writing at the LaAlO3/SrTiO3 Surface Reviewed

    Yanwu Xie, Christopher Bell, Takeaki Yajima, Yasuyuki Hikita, Harold Y. Hwang

    NANO LETTERS   10 ( 7 )   2588 - 2591   2010.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/nl1012695

  • Mn3O4 precipitates in laser-ablated manganite films Reviewed

    T. Higuchi, T. Yajima, L. Fitting Kourkoutis, Y. Hikita, N. Nakagawa, D. A. Muller, H. Y. Hwang

    APPLIED PHYSICS LETTERS   95 ( 4 )   043112   2009.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3193667

  • Termination control of the interface dipole in La0.7Sr0.3MnO3/Nb:SrTiO3 (001) Schottky junctions Reviewed

    Yasuyuki Hikita, Mitsuru Nishikawa, Takeaki Yajima, Harold Y. Hwang

    PHYSICAL REVIEW B   79 ( 7 )   2009.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevB.79.073101

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Books

  • 環境発電ハンドブック 第2版

    矢嶋赳彬( Role: Joint author)

    エヌ・ティー・エス  2022.4 

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    Responsible for pages:p43-47   Language:Japanese   Book type:Scholarly book

  • 環境発電ハンドブック 第2版

    矢嶋赳彬

    エヌ・ティー・エス  2021.10 

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    Language:Others  

Presentations

  • 酸化物相転移とプロトンを駆使したニューロモルフィックデバイス設計 Invited

    矢嶋赳彬

    第258回JOEM研究会  2023.12 

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    Language:Others  

    Country:Other  

  • Smart energy extraction from energy harvesters using timing-based asynchronous digital circuits Invited

    Takeaki Yajima

    IEEE-NEMS2022  2022.4 

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    Language:Others  

    Country:Other  

  • Low-power circuits for energy harvesters based on spiking-neuron delay elements Invited

    Takeaki Yajima

    EuMW2021  2022.4 

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    Language:Others  

    Country:Other  

  • 持続可能社会のためのニューロモルフィックデバイス設計 Invited

    矢嶋赳彬

    学振R031ハイブリッド量子ナノ技術委員会 第7回研究会  2022.8 

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    Country:Other  

  • 環境発電の普及に向けた電源回路技術の動向について Invited

    矢嶋赳彬

    SDRJ委員会  2023.1 

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    Country:Other  

  • プロトンを用いたニューロモルフィック情報素子の設計 Invited

    矢嶋赳彬

    第70回応用物理学会春季学術講演会  2023.3 

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    Country:Other  

  • Designing neuromorphic devices using protons Invited

    Takeaki Yajima

    IWDTF 2023 (2023, Kanazawa, Japan)  2023.10 

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    Language:Others  

    Country:Other  

    Designing neuromorphic devices using protons

  • スパイキングニューラルネットを用いたエッジAIと環境発電のへの応用 Invited

    矢嶋赳彬

    エネルギーハーベスティングコンソーシアム総会 (2023, Tokyo)  2023.6 

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    Language:Others  

    Country:Other  

  • 固体プロトン素子を用いたニューロモルフィック機能設計 Invited

    矢嶋赳彬

    第85回固体イオニクス研究会 (2023, Tokyo)  2023.7 

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    Country:Other  

  • 酸化物ヘテロ構造とプロトンを用いたニューロモルフィック素子 Invited

    矢嶋赳彬

    第84回応用物理学会秋季講演会 (2023, Kumamoto)  2023.9 

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    Country:Other  

  • プロトンを用いたニューロモルフィック情報処理 Invited

    矢嶋赳彬

    新材料・新原理で築く ニューロモルフィックシステム (2023, Osaka)  2023.8 

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    Country:Other  

  • ニューロン回路と材料機能を用いた超低消費電力化技術の研究 Invited

    矢嶋赳彬

    Neumorphランチョンセミナー  2021.10 

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    Country:Other  

  • Ultra-sharp three-terminal switch using nano-scale phase transition material Invited

    Takeaki Yajima

    34th International Microprocesses and Nanotechnology Conference (MNC 2021)  2021.10 

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    Country:Other  

  • 非同期デジタル制御による振動発電用回路 Invited

    矢嶋赳彬

    環境発電関連技術の最先端(応用物理学会エネルギーハーベスティング研究グループ)  2021.11 

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    Country:Other  

  • Codesign of materials and circuits for neuromorphic edge computing Invited

    Takeaki Yajima

    2021.12 

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    Country:Other  

    Codesign of materials and circuits for neuromorphic edge computing

  • Next-generation switching devices based on metal-insulator transitions Invited

    Takeaki Yajima

    ISPlasma2022  2022.3 

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    Country:Other  

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MISC

  • 神経回路のアナロジーに基づく省エネエレクトロニクス Reviewed

    矢嶋 赳彬

    電気学会誌   2024.2

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    Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

    DOI: 10.1541/ieejjournal.144.84

  • スパイキングニューロン回路を用いた低消費電力IoT回路技術

    矢嶋赳彬

    機能材料   2021.3

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    Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

  • 金属絶縁体転移材料を利用した回路技術の研究 Reviewed

    矢嶋 赳彬

    電子情報通信学会 和文論文誌C   2020.9

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    Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

  • ペロブスカイト酸化物へテロ界面における界面ダイポールを用いたバンドオフセット制御

    矢嶋赳彬、疋田育之、簑原誠人、Christopher BELL、組頭広志、尾嶋正治、Julia A. MUNDY、Lena FITTING KOURKOUTIS、David. A. MULLER、Harold HWANG

    2012.4

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    Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

  • Engineering Artificial Interface Dipoles at Oxide Heterointerfaces.

    T. Yajima, Y. Hikita, M. Minohara, C. Bell, J. A. Mundy, L. Fitting Kourkoutis, D. A. Muller, H. Kumigashira, M. Oshima, H. Y. Hwang

    PF Activity Report   2015.6

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    Engineering Artificial Interface Dipoles at Oxide Heterointerfaces.

  • Engineering Artificial Interface Dipoles at Oxide Heterointerfaces

    T. Yajima, Y. Hikita, M. Minohara, C. Bell, J. A. Mundy, L. Fitting Kourkoutis, D. A. Muller, H. Kumigashira, M. Oshima, and H. Y. Hwang

    PF Activity Report   2015.4

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    Language:English   Publishing type:Internal/External technical report, pre-print, etc.  

    Other Link: http://pfwww.kek.jp/acr/2014pdf/part_a/14ah1_2.pdf

  • ペロブスカイト酸化物における界面ダイポールの設計とトランジスタへの応用 Reviewed

    矢嶋赳彬

    独創性を拓く 先端技術大賞   2012.6

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    Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

    Other Link: http://www.fbi-award.jp/sentan/jusyou/2012/3.pdf

  • Controlling Band Alignments by Engineering Interface Dipoles at Perovskite Oxide Heterointerfaces.

    T. Yajima, Y. Hikita, M. Minohara, C. Bell, H. Kumigashira, M. Oshima, J. A. Mumdy, L. F. Kourkoutis, D. A. Muller, H. Hwang

    PF News   2012.1

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    Controlling Band Alignments by Engineering Interface Dipoles at Perovskite Oxide Heterointerfaces.

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Industrial property rights

Patent   Number of applications: 14   Number of registrations: 1
Utility model   Number of applications: 0   Number of registrations: 0
Design   Number of applications: 0   Number of registrations: 0
Trademark   Number of applications: 0   Number of registrations: 0

Professional Memberships

  • IEEE

  • JSAP Silicon Technology Devision

  • JAPANESE NEURAL NETWORK SOCIETY

  • Material Research Society

  • THE JAPAN SOCIETY OF APPLIED PHYSICS

Committee Memberships

  • International Conference on Solid State Devices and Materials (SSDM)   Organizer   Foreign country

    2024.1 - 2025.9   

  • 応用物理学会 中分類(酸化物エレクトロニクス)   プログラム委員   Domestic

    2023.4 - 2025.3   

  • ニューロモルフィックAIハードウェア研究センター   外部委員   Domestic

    2021.7 - Present   

  • プログラム委員   Foreign country

    2020.10 - 2023.3   

  • The System Device Roadmap Committee of Japan (SDRJ), More than Moore working group (MtM)   Organizer   Domestic

    2019.12 - Present   

  • Organizer   Domestic

    2019.11 - 2023.4   

  • エネルギーハーベスティングコンソーシアム   正式オブザーバ   Domestic

    2018.4 - Present   

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Academic Activities

  • オーガナイザ

    脳機能から考えるレザバーコンピューティングの未来  ( オンライン ) 2021.8

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    Type:Competition, symposium, etc. 

    Number of participants:55

  • オーガナイザ

    バイオミメティック情報処理の最前線  ( 大阪 ) 2020.11

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    Type:Competition, symposium, etc. 

  • Executive Comittee International contribution

    2018 International Conference on Solid State Devices and Materials  ( Tokyo Japan ) 2018.9

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    Type:Competition, symposium, etc. 

  • 代表企画者

    第23回 電子デバイス界面テクノロジー研究会 企画セッション「ポストディープラーニングに向けたニューロチップの基盤技術」  ( 三島 ) 2018.1

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    Type:Competition, symposium, etc. 

  • 代表世話人

    春季応用物理学会 シンポジウム「次世代ニューロモルフィックハードウェアにおける機能性酸化物の役割」  ( 横浜 ) 2017.3

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Research Projects

  • 自立センサノードのためのバイオミメティック汎用電源回路

    2022 - 2027

    産業技術研究助成事業 (経済産業省)

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    Authorship:Principal investigator  Grant type:Contract research

  • スパイキングネットによるエッジでのリアルタイム学習基盤

    2019 - 2024

    戦略的創造研究推進事業 (文部科学省)

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    Authorship:Coinvestigator(s)  Grant type:Contract research

  • 抵抗変化素子を活用した環境発電用回路技術の創成

    2017 - 2020

    戦略的創造研究推進事業 (文部科学省)

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    Authorship:Principal investigator  Grant type:Contract research

Educational Activities

  • Teaching Fundamentals of Electromagnetism and Application of Quantum Mechanics I for bachelor course. Teaching Neuromorphic Hardware and Group Research Proposal for EEE in graduate school.

Class subject

  • 電磁気学基礎

    2023.12 - 2024.2   Winter quarter

  • 電気電子工学演示Ⅱ

    2023.10 - 2024.3   Second semester

  • 電気電子工学読解Ⅱ

    2023.10 - 2024.3   Second semester

  • 電磁気学基礎

    2023.10 - 2023.12   Fall quarter

  • Neuromorphic Hardware II

    2023.6 - 2023.8   Summer quarter

  • ニューロコンピューティング特論Ⅱ

    2023.6 - 2023.8   Summer quarter

  • ニューロモルフィックハードウェア特論Ⅱ

    2023.6 - 2023.8   Summer quarter

  • 電気工学基礎Ⅱ

    2023.6 - 2023.8   Summer quarter

  • 構成エレクトロニクス特別講究

    2023.4 - 2024.3   Full year

  • 電気電子工学特別研究Ⅱ

    2023.4 - 2024.3   Full year

  • 電気電子工学特別研究Ⅰ

    2023.4 - 2024.3   Full year

  • 電気電子工学特別演習

    2023.4 - 2024.3   Full year

  • Advanced Research in Constructive Electronics

    2023.4 - 2024.3   Full year

  • Advanced Seminar in Electrical and Electronic Engineering

    2023.4 - 2024.3   Full year

  • Advanced Research in Electrical and Electronic Eng II

    2023.4 - 2024.3   Full year

  • Advanced Research in Electrical and Electronic Engineering I

    2023.4 - 2024.3   Full year

  • 電気電子工学演示Ⅰ

    2023.4 - 2023.9   First semester

  • 電気電子工学読解Ⅰ

    2023.4 - 2023.9   First semester

  • 電気工学基礎

    2023.4 - 2023.9   First semester

  • ニューロコンピューティング特論Ⅰ

    2023.4 - 2023.6   Spring quarter

  • 量子力学応用Ⅰ

    2023.4 - 2023.6   Spring quarter

  • 量子力学応用Ⅰ

    2023.4 - 2023.6   Spring quarter

  • 電気工学基礎Ⅰ

    2023.4 - 2023.6   Spring quarter

  • 電磁気学基礎

    2022.12 - 2023.2   Winter quarter

  • 電磁気学基礎

    2022.10 - 2022.12   Fall quarter

  • ニューロモルフィックハードウェア特論Ⅱ

    2022.6 - 2022.8   Summer quarter

  • Neuromorphic Hardware II

    2022.6 - 2022.8   Summer quarter

  • 電気電子工学企画演習

    2022.4 - 2022.9   First semester

  • 工学概論(Ⅰ群)

    2022.4 - 2022.9   First semester

  • 量子力学大意

    2022.4 - 2022.9   First semester

  • 電気電子工学特別研究第ニ 1G

    2022.4 - 2022.9   First semester

  • 電気電子工学読解Ⅰ

    2022.4 - 2022.9   First semester

  • 電気電子工学演示Ⅰ

    2022.4 - 2022.9   First semester

  • 電気電子工学研究演示(第1グループ)

    2022.4 - 2022.9   First semester

  • Group Research Proposal for EEE

    2022.4 - 2022.9   First semester

  • Survey in EEE Studies(Group1)

    2022.4 - 2022.9   First semester

  • ニューロモルフィックハードウェア特論Ⅰ

    2022.4 - 2022.6   Spring quarter

  • Neuromorphic Hardware I

    2022.4 - 2022.6   Spring quarter

  • 量子力学応用Ⅰ

    2022.4 - 2022.6   Spring quarter

  • 電磁気学基礎

    2021.12 - 2022.2   Winter quarter

  • 電磁気学基礎

    2021.10 - 2022.3   Second semester

  • 電気電子工学読解Ⅱ

    2021.10 - 2022.3   Second semester

  • 電気電子工学研究調査(第1グループ)

    2021.10 - 2022.3   Second semester

  • 電磁気学基礎

    2021.10 - 2021.12   Fall quarter

  • ニューロモルフィックハードウェア特論Ⅱ

    2021.6 - 2021.8   Summer quarter

  • Neuromorphic Hardware II

    2021.6 - 2021.8   Summer quarter

  • ニューロモルフィックハードウェア特論

    2021.4 - 2021.9   First semester

  • 電気電子工学読解Ⅰ

    2021.4 - 2021.9   First semester

  • [M2]電気電子工学演習第三

    2021.4 - 2021.9   First semester

  • 量子力学応用1

    2021.4 - 2021.6   Spring quarter

  • Neuromorphic Hardware I

    2021.4 - 2021.6   Spring quarter

  • 量子力学応用Ⅰ

    2021.4 - 2021.6   Spring quarter

  • ニューロモルフィックハードウェア特論Ⅰ

    2021.4 - 2021.6   Spring quarter

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FD Participation

  • 2022.1   Role:Participation   Title:【シス情FD】シス情関連の科学技術に対する国の政策動向(に関する私見)

    Organizer:[Undergraduate school/graduate school/graduate faculty]

  • 2021.4   Role:Participation   Title:令和3年度 第1回全学FD(新任教員の研修)

    Organizer:University-wide

  • 2021.3   Role:Participation   Title:学習支援システム(M2B)講習会(オンライン開催)◇初級編・中・上級編◇13:00~15:00

    Organizer:University-wide

  • 2020.12   Role:Participation   Title:Moodle&MS Teams連携によるオンライン講義実施報告(Youtube Prezi Powerpoint Wolframcloud そして TeX)

    Organizer:[Undergraduate school/graduate school/graduate faculty]

Other educational activity and Special note

  • 2023  Class Teacher 

  • 2022  Class Teacher 

  • 2021  Class Teacher 

Media Coverage

  • 九大、生物の神経回路に学ぶ超省エネIoT制御技術を確立 Newspaper, magazine

    日本経済新聞  2022.1

     More details

    九大、生物の神経回路に学ぶ超省エネIoT制御技術を確立

Activities contributing to policy formation, academic promotion, etc.

  • 2023.3   応用物理学会シンポジウム「脳と非生体型自律分散システムにおける情報処理・創造の最前線」

    世話人

  • 2021.4 - 2021.8   第2回トータルバイオミメティクス研究会「脳機能から考えるレザバーコンピューティングの未来」

    代表企画者

  • 2020.5 - 2022.3   応用物理学会 若手チャプタ

    副代表

  • 2018.11 - 2019.3   International Workshop on Materials Science & Device Physics for Advanced Electron Devices

    実行委員

  • 2017.10 - 2018.9   SSDM 2018

    実行委員

  • 2017.6 - 2018.1   第23回 電子デバイス界面テクノロジー研究会 企画セッション"ポストディープラーニングに向けたニューロチップの基盤技術"

    代表企画者

  • 2016.9 - 2017.3   春季応用物理学会 2017 シンポジウム "次世代ニューロモルフィックハードウェアにおける機能性酸化物の役割"

    代表世話人

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