記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Springer Nature  

(ZnO)X(InN)1-X films have been epitaxially grown on 0.9%-lattice-mismatched ZnO substrates at 450 °C by sputtering. Films fabricated on O-polar substrates exhibit higher crystal quality and smoother surface. The full width at half-maximum of (0002) rocking curve and the root-mean-square roughness (Rq) of a 30-nm-thick film on O-polar surface are 0.21° and 2.71 nm, respectively, whereas those on Zn-polar one are 0.32° and 4.30 nm, respectively. Rq on O-polar surface further decreases to 0.73 nm as the thickness decreases to 10 nm, where we successfully obtained atomically flat single-crystalline films having atomically sharp interface with the substrates. High-resolution transmission electron microscopy revealed the Stranski–Krastanov (layer plus island) growth for O-polar case and just 3D islanding mode growth for Zn-polar one. All the results indicate the much longer migration length of adatoms on O-polar surface during the film growth, enabling adatoms to reach their thermodynamically favored positions even at low substrate temperature.

DOI： 10.1557/s43578-022-00827-4

Web of Science

Scopus

researchmap

担当区分：筆頭著者,　責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Institute of Electrical and Electronics Engineers (IEEE)  

We report on optical and electrical properties of amorphous In-Ga-Mg-O (a-IGMO) films and characteristics of a-IGMO channel thin-film transistors which went through the reductive post-annealing process. Optical band-gap energies of a-IGMO films were larger than that of amorphous In-Ga-Zn-O (a-IGZO) films. Carrier density and Hall mobility of a-IGMO films with the reductive post-annealing were almost the same degree as those of a-IGZO films. Although the reductive annealing with the SiNx underlayer makes an a-IGZO film degenerate semiconductor and its TFT inoperative, a-IGMO TFTs successfully operated after this reductive process. Break-junction tunnelling spectroscopy which was applicable not to a-IGMO but to a-IGZO with the reductive process showed a noticeable density of state character in the vicinity of the Fermi level for a-IGZO, which is consistent with its property.

DOI： 10.1109/ojnano.2022.3222850

Web of Science

Scopus

researchmap

担当区分：筆頭著者,　責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：AIP Publishing  

The structural properties of single crystals of BiFeO3–BaTiO3 (BF–BT) ferroelectric oxide solid solution with a slightly BF-rich composition (72BF–28BT; toward the rhombohedral-phase side) from the rhombohedral–pseudocubic phase boundary were investigated by transmission electron microscopy (TEM) and reciprocal space mapping (RSM), including three-dimensional (3D) RSM. According to the TEM results, the 72BF–28BT specimen had a domain structure similar to that of a rhombohedral crystal and the polarization direction appeared to be approximately ⟨111⟩, corresponding to a ferroelectric crystal with rhombohedral symmetry, although some distorted behavior suggested that the crystal symmetry may not have been strictly rhombohedral. Fine and complex domain structures were also observed inside the rectangular domains. The RSM results also indicated that the crystal had rhombohedral-like symmetry, although several discrepancies were observed, such as unexpectedly split diffraction peaks and distortion-related diffraction distribution in the reciprocal space. The structural behavior observed in the TEM images and 2D and 3D RSM images suggested that the symmetry of the 72BF–28BT specimen was lower than rhombohedral and may have been monoclinic. Structural disorder was detected along the distorted direction from rhombohedral symmetry, which could interfere with obtaining structural information via powder diffraction experiments and lead to inaccurate identification of the crystal structure as a higher-symmetry one.

DOI： 10.1063/5.0008990

担当区分：筆頭著者,　責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Springer Nature Limited  

To stabilise ferroelectric-tetragonal phase of BaTiO3, the double-doping of Bi and Mn up to 0.5 mol% was studied. Upon increasing the Bi content in BaTiO3:Mn:Bi, the tetragonal crystal-lattice-constants a and c shrank and elongated, respectively, resulting in an enhancement of tetragonal anisotropy, and the temperature-range of the ferroelectric tetragonal phase expanded. X-ray absorption fine structure measurements confirmed that Bi and Mn were located at the A(Ba)-site and B(Ti)-site, respectively, and Bi was markedly displaced from the centrosymmetric position in the BiO12 cluster. This A-site substitution of Bi also caused fluctuations of B-site atoms. Magnetic susceptibility measurements revealed a change in the Mn valence from +4 to +3 upon addition of the same molar amount of Bi as Mn, probably resulting from a compensating behaviour of the Mn at Ti4+ sites for donor doping of Bi3+ into the Ba2+ site. Because addition of La3+ instead of Bi3+ showed neither the enhancement of the tetragonal anisotropy nor the stabilisation of the tetragonal phase, these phenomena in BaTiO3:Mn:Bi were not caused by the Jahn-Teller effect of Mn3+ in the MnO6 octahedron, but caused by the Bi-displacement, probably resulting from the effect of the 6 s lone-pair electrons in Bi3+.

DOI： 10.1038/srep45842

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：IOP Publishing  

Platelet NaNbO3 grains were grown at 1150–1225 °C by single-step molten salt synthesis. The structural and compositional transformation from the precursor Aurivillius phase to perovskite NaNbO3 by the topochemical conversion reaction was studied. No compositional distribution was confirmed for the platelet grains grown at 1150 °C, whereas it was observed that the expulsion of bismuth and incorporation of sodium were simultaneously initiated in spots for the grains grown at 1170 °C. With increasing the growth temperature the topochemical conversion reaction was promoted, and single-phase NaNbO3 grains were eventually grown with heat treatment at 1225 °C for 6 h. In order to trace the structural transformation due to the topochemical conversion reaction, preconversion and postconversion platelet grains were chosen for characterizing the microstructure. It was found that the precursor Aurivillius phase is a mixed phase described as Bi2.5Nam−1.5NbmO3m+3 (m = 5, 6, and 8). In the interior of the platelet grains, migration paths vertically elongated to the principal surface are created, and bismuth is expelled via the vertical path as well as the horizontal path along the (Bi2O2)2+ layer. It was concluded that the distinctive migration network contributed to the structural transformation while maintaining the epitaxy.

DOI： 10.7567/jjap.53.09pb08

担当区分：筆頭著者,　責任著者   記述言語：その他   掲載種別：研究論文（学術雑誌）   出版者・発行元：IOP Publishing  

We report on microscopic structures and electrical and optical properties of sputter-deposited amorphous indium-gallium-zinc oxide (a-IGZO) films. From electron microscopy observations and an x-ray small angle scattering analysis, it has been confirmed that the sputtered a-IGZO films consist of a columnar structure. However, krypton gas adsorption measurement revealed that boundaries of the columnar grains are not open-pores. The conductivity of the sputter-deposited a-IGZO films shows a change as large as seven orders of magnitude depending on post-annealing atmosphere; it is increased by N2-annealing and decreased by O2-annealing reversibly, at a temperature as low as 300°C. This large variation in conductivity is attributed to thermionic emission of carrier electrons through potential barriers at the grain boundaries, because temperature dependences of the carrier density and the Hall mobility exhibit thermal activation behaviours. The optical band-gap energy of the a-IGZO films changes between before and after annealing, but is independent of the annealing atmosphere, in contrast to the noticeable dependence of conductivity described above. For exploring other possibilities of a-IGZO, we formed multilayer films with an artificial periodic lattice structure consisting of amorphous InO, GaO, and ZnO layers, as an imitation of the layer-structured InGaZnO4 homologous phase. The hall mobility of the multilayer films was almost constant for thicknesses of the constituent layer between 1 and 6 Å, suggesting rather small contribution of lateral two-dimensional conduction It increased with increasing the thickness in the range from 6 to 15 Å, perhaps owing to an enhancement of two-dimensional conduction in InO layers.

DOI： 10.1088/1742-6596/518/1/012001

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：IOP Publishing  

(111)-oriented epitaxial (1 − x)Bi(Mg1/2Ti1/2)O3–xBi(Zn1/2Ti1/2)O3 solid solution films were grown on (111)cSrRuO3/(111)SrTiO3 substrates by pulsed laser deposition, and their crystal structure and electrical properties were characterized. The solid solution films consisted of a perovskite single phase in the x range of 0–0.93. The coexistence region of rhombohedral and tetragonal phases was observed in the x range of 0.18–0.60, which differed from reported data for the powders synthesized at high temperatures and high pressures. The polarization–electric field hysteresis loops originating from ferroelectricity were observed at room temperature and 1 kHz in the x range of 0–0.33, and the remanent polarization monotonously decreased with increasing x. The relative dielectric constant measured at room temperature and 100 kHz and the apparent piezoelectric constant evaluated by piezoresponse force microscopy at room temperature and 5 Hz were maximum at approximately x = 0.14. These results suggest that these tendencies of the electrical and electromechanical properties were related to the volume fractions of the constituent phases in the solid solution films.

DOI： 10.7567/jjap.53.05fe06

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：IOP Publishing  

(1-x)NaNbO3–xBaTiO3 single crystals were grown by slow-cooling and flux methods. In the slow-cooling method, 0.88NaNbO3–0.12BaTiO3 powder was melted in a platinum crucible at 1500 °C and cooled down to 1000 °C. Slow cooling at less than 21 °C/h led to a bulky single crystal, and the BaTiO3/NaNbO3 ratio was graded inside the single crystal as expected from the phase diagram. Further slow cooling at 5 °C/h with the aim of improving the compositional uniformity increased the level of contamination of platinum in the single crystals from the crucible. Cuboidal single crystals with a (100) facet were grown in Na2B4O7 flux through a cooling process from 1200 to 1000 °C at 1 °C/h. There was no compositional gradient inside the cuboidal crystals, and the BaTiO3 content of the single crystals remained within 2–3% irrespective of the raw powder/flux ratio and the BaTiO3 composition in the raw powder. The obtained single crystals were orthorhombic ferroelectrics with a phase transition temperature of 310–330 °C.

DOI： 10.7567/jjap.52.09kc02

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：American Chemical Society (ACS)  

BiFe1–xCoxO3 and Bi0.9Sm0.1Fe1–xCoxO3 were synthesized under a high pressure of 4 GPa; 10% Sm substitution for Bi in BiFe1–xCoxO3 (x ≤ 0.20) drastically destabilized the ferroelectric BiFeO3-type structure and changed it to an antiferroelectric PbZrO3-type superstructure. In comparison, a ferroelectric BiCoO3-type tetragonal structure (x ≥ 0.40) was insensitive to the Sm substitution. No decrease in the ferroelectric Curie temperature (TC) was observed. Weak ferromagnetism with a spontaneous moment of 0.025 μB/formula unit (f.u.) was observed for BiFe1–xCoxO3 (x = 0.10 and 0.20) samples, suggesting the change in the spin structure from a cycloidal one. Because of the coexistence of ferroelectricity and ferromagnetism at room temperature, this compound is a promising multiferroic material.

DOI： 10.1021/ic402041p

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Ceramic Society of Japan  

0.3BaTiO3–0.1Bi(Mg1/2Ti1/2)O3–0.6BiFeO3 ceramics were either doped with vanadium or sintered in calcined powder with the same composition. Compared to an undoped ceramic sintered without the calcined powder, both ceramics showed reduced leakage current densities (lower than 1 × 10−7 A/cm2) and absence of dielectric relaxation behaviors observed in frequency- and temperature-dependent dielectric measurements. The Curie temperatures of both samples were higher than 460°C. The maximum field-induced strain over the applied field, Smax/Emax, of 366 pm/V for the undoped ceramic sintered without the calcined powder increased to 455 and 799 pm/V for the V-doped sample and the sample sintered with the calcined powder, respectively. The increase was discussed with reduced concentrations of bismuth vacancy–oxygen vacancy defect dipoles.

DOI： 10.2109/jcersj2.121.589

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Trans Tech Publications, Ltd.  

Barium titanate (BaTiO3, BT)-bismuth magnesium titanate (Bi (Mg1/2Ti1/2)O3, BMT)-bismuth ferrite (BiFeO3, BF) solid solution ceramics were prepared using a conventional solidstate synthesis, and their piezoelectric properties and microstructure were investigated. Strain electric field curves of the 0.3BT-0.1BMT-0.6BF ceramics with a single perovskite phase were ferroelectric butterfly-like curves. A strain maximum / electric field maximum (Smax/Emax) was 330 pm/V. Transmission electron microscopy revealed ferroelectric-like domain structure in the 0.3BT-0.1BMT-0.6BF ceramics.

DOI： 10.4028/www.scientific.net/kem.566.59

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：IOP Publishing  

Films of a high-pressure perovskite phase, Bi(Mg1/2Ti1/2)O3, were prepared on (111)c-oriented SuRuO3-coated (111)Pt/TiO2/SiO2/(100)Si substrates. The perovskite Bi(Mg1/2Ti1/2)O3 films had a (111) one-axis orientation, because their constituent grains were epitaxially grown on (111)c-oriented perovskite SrRuO3 ones. The remanent polarization and piezoelectric constant measured at an applied electric field of 600 kV/cm were about 30 µC/cm2 and 40 pm/V, respectively. A remarkable phase transition was not observed from room temperature to 350 °C in a (111) one-axis-oriented Bi(Mg1/2Ti1/2)O3 film, suggesting that the Curie temperature of this film is above 350 °C.

DOI： 10.7567/jjap.52.04ch09

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：IOP Publishing  

The origin of the ferroelectricity of Bi(Mg1/2Ti1/2)O3 films was investigated. Epitaxial Bi(Mg1/2Ti1/2)O3 films with film thicknesses of 50 to 800 nm were grown on (111)cSrRuO3/(111)SrTiO3 substrates by pulsed laser deposition. A Bi(Mg1/2Ti1/2)O3 film was not strongly clamped from the substrate and identified to have rhombohedral symmetry with a = 0.398 nm and α= 89.8°, which was independent of film thickness within 100 to 800 nm. The relative dielectric constant, remanent polarization, and coercive field of the Bi(Mg1/2Ti1/2)O3 films at room temperature were almost constant at about 250, 60 µC/cm2, and 240 kV/cm, respectively, for film thicknesses above 200 nm. These data suggest that Bi(Mg1/2Ti1/2)O3 films are ferroelectric.

DOI： 10.1143/jjap.51.09la04

担当区分：筆頭著者,　責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：IOP Publishing  

The dependence of the ferroelectric and piezoelectric properties of (1-x)(0.33BaTiO3–0.67BiFeO3)–xBi(Mg1/2Ti1/2)O3 (x = 0, 0.05, 0.10, and 0.15) on Bi(Mg1/2Ti1/2)O3 content x associated with microstructural changes is studied. From the behaviour of electric field-induced polarization and strain, polarization switching and depolarizing become easier as Bi(Mg1/2Ti1/2)O3 content x increases. Remanent polarization and dielectric constant decrease, while polarization saturation field increases with increasing x. Microstructural observation reveals that Bi(Mg1/2Ti1/2)O3 addition enhances the compositional fluctuation of BaTiO3/BiFeO3 ratio, which probably creates a nanometre-sized domain region with slightly BaTiO3-rich composition. Since this nanometre-sized domain may cause relatively large responses of polarization and strain to the applied electric field, an appropriate amount of Bi(Mg1/2Ti1/2)O3 enhances the electric field-induced strain, resulting in the largest piezoelectric response at x = 0.05. However, excessive Bi(Mg1/2Ti1/2)O3 degrades polarization and strain characteristics, because a number of Ba(Fe1-xMgx/2Tix/2)12O19 grains are created as a secondary phase and cause the segregation of excess bismuth oxide phases with low dielectric constant into the boundaries of the ferroelectric/piezoelectric grains.

DOI： 10.1143/jjap.51.09ld04

記述言語：英語   掲載種別：研究論文（その他学術会議資料等）   出版者・発行元：Institute of Electrical and Electronics Engineers (IEEE)  

0.3BaTiO3-0.1Bi(Mg1/2Ti1/2)O3-0.6BiFeO3 ceramics were either doped with vanadium or sintered in calcined powder with the same composition. Compared to an undoped ceramic sintered without the calcined powder, both ceramics showed reduced leakage current densities (lower than 1 × 10-7 A/cm2) and absence of dielectric relaxation behaviors observed in frequency-and temperature-dependent dielectric measurements. The Curie temperatures of both samples were higher than 460 °C. The maximum field-induced strain over the applied field, Smax/Emax, of 366 pm/V of the undoped ceramic sintered without the calcined powder increased to 455 and 799 pm/V for the V-doped sample and the sample sintered with the calcined powder, respectively. The increase was related to a reduced concentration of bismuth vacancy - oxygen vacancy defect dipoles.

DOI： 10.1109/isaf.2012.6297767

記述言語：日本語   掲載種別：研究論文（学術雑誌）   出版者・発行元：一般社団法人粉体粉末冶金協会  

Sequential Phase Transitions in Sm Substituted BiFeO₃
The compositional and thermal evolution of the crystal structure of the Bi1-xSmxFeO3 solid solution synthesized under a high pressure was investigated. Samples with 0.10≤x≤0.20 had an antipolar PbZrO3-type structure with a √2a×2√2a×4a perovskite superstructure at room temperature, while the sample with x = 0.05 had a rhombohedral BiFeO3-type structure. Among them, the samples with 0.10≤x≤0.12 transformed from an antipolar PbZrO3-type structure to a polar BiFeO3-type structure and finally to a nonpolar GdFeO3-type structure on heating, which is similar to Zr-rich Pb(Zr,Ti)O3. On the other hand, the samples with 0.15 ≤x≤ 0.20 transformed directly to a nonpolar GdFeO3-type structure. The ferroelectric Curie temperature of BiFeO3 was markedly lowered by the Sm substitution.

DOI： 10.2497/jjspm.59.239

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：IOP Publishing  

The compositional and thermal evolution of the crystal structure of the solid solution Bi1-xSmxFeO3 synthesized at a high pressure of 4 GPa was investigated. It was found that Bi1-xSmxFeO3 with x = 0.10 and 0.15 had an antipolar PbZrO3-type structure with a √2a×2√2a×4a perovskite superstructure at room temperature, while that with x = 0.05 had the same structure as the parent BiFeO3 (x = 0). The x = 0.10 sample transforms from an antipolar PbZrO3-type orthorhombic structure to a polar BiFeO3-type rhombohedral structure and eventually to a nonpolar GdFeO3-type structure on heating as Zr-rich PZT.

DOI： 10.1143/jjap.50.09ne08

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：IOP Publishing  

Mn-doped (0.9-x)BaTiO3–0.1Bi(Mg1/2Ti1/2)O3–xBiFeO3 (x = 0.6, 0.7, and 0.8) ceramics were studied as candidate lead-free piezoelectric materials. The crystal structures were a pseudo-cubic perovskite at x = 0.6, a rhombohedral perovskite at x = 0.8, and a mixture of the pseudo-cubic and rhombohedral perovskite at x = 0.7. The Curie temperature was found to be 470 °C at x = 0.6 and more than 600 °C at x = 0.7 and 0.8. A strong pinning of domain walls was observed for high-field responses at x = 0.7 and 0.8, which was relaxed by high-temperature annealing and subsequent quenching. Piezoelectric properties increased with decreasing x, and the small-field piezoelectric constants d33 and d31 were 94 and 31 pC/N at x = 0.6, respectively.

DOI： 10.1143/jjap.50.09nd07

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：IOP Publishing  

A ceramic slurry that contains a 6H-type Ba(Ti0.95Mn0.05)O3 powder was casted into a plaster mold under 10 T magnetic field to form a green compact of (0001)-oriented Ba(Ti0.95Mn0.05)O3. After sintering the green compact at 1300 °C in air, it was confirmed that the (0001)-oriented 6H-type perovskite structure transformed to a (111)-oriented 3C-type perovskite structure. The structural transformation was again examined using hexagonal BaTiO3 prepared by reducing pseudo-cubic BaTiO3 powder in H2 atmosphere. In this case, the preferred (0001) orientation was not confirmed for the green compacts. After sintering the green compacts at 1300 °C in air, mixed crystal orientations of (100)/(001) and (111) were observed for the resultant tetragonal BaTiO3 ceramics. This (100)/(001) orientation was suppressed by annealing the hexagonal BaTiO3 powder at 1000 °C before slip-casting, leading to highly (111)-oriented ceramics. It was found that the green compacts of (0001)-oriented hexagonal BaTiO3 can transform into (111)-oriented tetragonal BaTiO3 ceramics, maintaining the macroscopic crystal orientations due to a similar atomic stacking along [0001] of 6H-type BaTiO3 and [111] of 3C-type BaTiO3.

DOI： 10.1143/jjap.50.09nd01

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Trans Tech Publications, Ltd.  

Relaxor characteristics of (1-x)BaTiO3-xBi(Mg1/2Ti1/2)O3 (x=0.1–0.7) ceramics were investigated. Microstructural observation showed second phases and no domain structure for the sample with x=0.6. Deviation from the Curie-Weiss behavior was found in temperature dependence of the inverse permittivity for all the samples. The stronger dielectric dispersion was found for x=0.6 and 0.7 and they were described by the Vogel-Fulcher relationship. The temperature dependence of the remanent polarization and coercive field indicated the freezing temperature was 100~150°C for x=0.6. The strong dielectric dispersion of x=0.6 is believed to be induced by the structural disorder due to the second phases.

DOI： 10.4028/www.scientific.net/kem.485.31

担当区分：筆頭著者,　責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：AIP Publishing  

Thin film transistors TFTs using polycrystalline tin oxides SnO–SnO2 channels were formed on
glass by a conventional sputtering method and subsequent annealing treatments. SnO-channel TFTs
showed p-type operation with on/off current ratios of 102 and field-effect mobilities of
0.24 cm2 V−1 s−1. Incorporation of excess oxygen to SnO channel layers did not generate holes but
did electrons, which in turn led to n-type operation. This result is explained by transformation to a
local SnO2-like structure and finally to SnO2. We propose a simple method to fabricate
complimentary circuits by simultaneous selective formation of p- and n-channel TFTs.

DOI： 10.1063/1.3478213

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：IOP Publishing  

The system of MnFeP1−xAsx is a candidate of a magnetic refrigerator material. We have investigated the temperature (T)- and magnetic field (H)-dependence of the magnetic properties of the Mn and Fe ions for Mn0.9Fe1.1P0.55As0.45 using a soft x-ray magnetic circular dichroism (XMCD) in the regions of the Mn and Fe L2,3 absorption edges. In the ferromagnetic states, the magnetic moments of the Mn and Fe ions turn to the same direction. It is considered that the Mn ions are close to divalent (Mn2+) states and that the Fe ions are a mixture of trivalent (Fe3+) and divalent (Fe2+) states. However, we deduce that the ferromagnetic properties of the Fe ions are mainly derived from the Fe2+ states. Using the XMCD sum rules, we have found that the magnitude of the magnetic moment of the Mn ions is larger than that of the Fe ions. The paramagnetic to ferromagnetic transitions are clearly observed by the T- and H- dependent XMCD measurements. Scince the shapes of the spectra don't change in all experiment conditions, the electronic configurations of the Mn and Fe ions are not changed by the PM-FM transition.

DOI： 10.1088/1742-6596/200/1/012199

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Institute of Electrical and Electronics Engineers (IEEE)  

his paper presents the following recent investigations of transparent amorphous-oxide semiconductors (TAOS) from materials to devices and circuits. 1) Composition of metals in TAOS are widely explored with the aim of seeking semiconductors suitable for the channel layers of thin-film transistors (TFTs) composing backplanes for flat-panel displays. It is found in combinatorial approaches to the materials exploration that indium-based ternary TAOS (In-X-O) and their TFTs show the properties and the performance as good as those of the most popular material of amorphous In-Ga-Zn-O (alpha-IGZO) when X = Zn or Ge. 2) Defects and impurities in TAOS are investigated by theoretical approaches. The first-principle calculation of the electron states reveals that charge-neutral oxygen vacancy or interstitial forms the density of states around mid-gap level and does not generate carriers directly, while hydrogen impurity raises the Fermi level beyond the conduction-band minimum and acts as a donor in TAOS. 3) Device structures of TAOS-TFTs are also investigated extensively for better performance and stability. It is found in channel-etch type TFTs with bottom-gate inverse-stagger structures that the TFT characteristics and stability are significantly improved by chemically removing the back-channel layer in a wet-etching process. Coplanar homojunction (CH) structure is proposed as a novel device structure where conductive alpha-IGZO regions work as the source and drain electrodes to the channel region of semiconductor alpha-IGZO. The CH TFTs show excellent characteristics and stability, with low series resistance without any difficulty in making good electrical contact between metals and TAOS. 4) Circuits using TAOS-TFTs are demonstrated. A ring oscillator composed of fifteen-stage inverters with a buffer circuit operates as designed by circuit simulation with a TFT model for hydrogenated amorphous Si TFTs. Pixel circuits composed of three TFTs and one transparent capacitor successfully drive organic light-emission diode cells without a planarization layer on a 2-in diagonal panel having 176 times144 times 3 pixels.

DOI： 10.1109/jdt.2009.2025521

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：The Society for Information Display  

We review the features of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs), as well as circuit operation based on these TFTs. We also report a novel TFT structure which improves environmental stability of the TFT operation by taking full advantage of the a-IGZO properties, where a conventional PECVD a-SiNX:H films serve not only as an effective barrier layer but also as a hydrogen source to form the coplanar source and drain.

DOI： 10.1889/1.3069739

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：The Society for Information Display  

High-performance and excellent-uniformity thin-film transistors (TFTs) having bottom-gate structures are fabricated using an amorphous indium-gallium-zinc-oxide (IGZO) film and an amorphous-silicon dioxide film as the channel layer and the gate insulator layer, respectively. All of the 94 TFTs fabricated with an area 1 cm2 show almost identical transfer characteristics: the average saturation mobility is 14.6 cm2/(V-sec) with a small standard deviation of 0.11 cm2/(V-sec). A five-stage ring-oscillator composed of these TFTs operates at 410 kHz at an input voltage of 18 V. Pixel-driving circuits based on these TFTs are also fabricated with organic light-emitting diodes (OLED) which are monolithically integrated on the same substrate. It is demonstrated that light emission from the OLED cells can be switched and modulated by a 120-Hz ac signal input. Amorphous-IGZO-based TFTs are prominent candidates for building blocks of large-area OLED-display electronics.

DOI： 10.1889/1.2812992

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Elsevier B.V.  

The crystal structure of a YbInCu4 sample grown by the Bridgman technique was studied by neutron powder diffraction at room
temperature. The site disorder for Yb and In atoms was not observed by Rietveld refinement of the crystal structure. Combining with
electron probe X-ray microanalysis, it was found that Cu atoms partially occupy the 4a sites, and the partial occupation causes the
increase of the valence transition temperature.

DOI： 10.1016/j.jmmm.2006.10.085

担当区分：筆頭著者,　責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Elsevier B.V.  

We report pressure effects on the first-order ferromagnetic–paramagnetic transition in MnFe(P,As) and MnFe(P,Ge). With increasing
pressure up to 1.5GPa, TC increases by 5% for MnFeðP0:54As0:46Þ but decreases by 2% for MnFeðP0:85Ge0:15Þ. The divergence of TC as a
function of pressure suggests that the dominant parameter determining TC is not the volume, but probably the anisotropic lattice
distortion. The magnetization vs temperature hysteresis was increased with applying pressure for MnFeðP0:85Ge0:15Þ.

DOI： 10.1016/j.jmmm.2006.10.699

担当区分：筆頭著者,　責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：The Physical Society of Japan  

We have found that the hexagonal ZrNiAl-type compounds MnFe(P 1- x Ge x ) with x = 0.15 and 0.17 show temperature- and field-induced first-order paramagnetic-to-ferromagnetic transitions with remarkable hysteresis loops at T C ≃250 K. The hysteresis widths in both temperature and field are much larger than those for a similar system of MnFe(P,As). On cooling below T C , the hexagonal lattice of MnFe(P 1- x Ge x ) contracts by 1.5% along the a -axis and elongates by 2.8% along the c -axis, keeping the crystal symmetry unchanged. The very small volume expansion of less than 0.1% suggests that the first-order transition is related to the anisotropic lattice distortion rather than the volume change.

DOI： 10.1143/jpsj.75.113707

担当区分：筆頭著者,　責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：AIP Publishing  

Thin-film transistors TFTs were fabricated using amorphous indium gallium zinc oxide a-IGZO
channels by rf-magnetron sputtering at room temperature. The conductivity of the a-IGZO films was
controlled from 10−3 to 10−6 Scm−1 by varying the mixing ratio of sputtering gases, O2/O2
+Ar , from 3.1% to 3.7%. The top-gate-type TFTs operated in n-type enhancement mode with a
field-effect mobility of 12 cm2 V−1 s−1, an on-off current ratio of 108, and a subthreshold gate
voltage swing of 0.2 V decade−1. It is demonstrated that a-IGZO is an appropriate semiconductor
material to produce high-mobility TFTs at low temperatures applicable to flexible substrates by a
production-compatible means.

DOI： 10.1063/1.2353811

担当区分：筆頭著者,　責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Elsevier B.V.  

Temperature dependences of magnetic susceptibility wðTÞ and 115In Knight shift KðTÞ for YbInNi4 have been
measured. wðTÞ is well fitted to a Curie–Weiss (CW) law above about 45 K: It exhibits a deviation from the CW law
below about 20 K: The value of 115K; which is 14% at 6 K; decreases in its absolute value with increasing temperature.
A plot of wðTÞ vs. KðTÞ is linear between 6 and 260 K; suggesting that the deviation of wðTÞ from the CW law is an
intrinsic property of YbInNi4 and is due to the crystalline field effect.

DOI： 10.1016/j.jmmm.2003.12.538

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：IOP Publishing  

A low temperature N2 post-annealing process was proposed to improve the degradation of Ru/(Ba, Sr)TiO3/Ru capacitors due to forming gas annealing. After N2 post-annealing at 300°C, the leakage current degraded by forming gas annealing was completely recovered to the initial level without affecting the SiO2 equivalent thickness of 0.51 nm. No degradation of the subthreshold characteristics of n-channel metal-oxide-semiconductor field effect transistors and N+P junction leakage current by the post-annealing was also confirmed. The Ru/(Ba, Sr)TiO3/Ru capacitor technology with this post-annealing process is suitable for dynamic random access memories in 0.13 µm generation and beyond.

DOI： 10.1143/jjap.39.2063

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Springer Nature  

Electron cyclotron resonance (ECR) plasma chemical vapor deposition (CVD) of (BaSr)TiO3 dielectrics is reviewed. The oxygen plasma lowered the crystallization temperature and carbon contamination. (BaSr)TiO3 CVD process was developed under conditions of relatively low deposition rate of 1.1 nm/min and a relatively low deposition temperature of 550°C. Utilizing this process, we developed a gigabit dynamic random access memory (DRAM) capacitor technology involving the preparation of a thin (BaSr)TiO3 capacitor dielectric over a RuO2/Ru storage node contacting a TiN/TiSi X /poly-Si plug. The ECR plasma CVD enabled uniform deposition of gigabit-DRAM-quality (BaSr)TiO3 films on the electrode sidewalls. The storage node contact improved in endurance against oxidation, by fabricating the buried-in TiN/TiSi X plug (TiN-capped plug) under the RuO2/Ru storage node. (BaSr)TiO3 films with a small equivalent SiO2 thickness of 0.38 nm and a leakage current density of 8.5×10−7 A/cm2 at an applied voltage of 1.0 V, were obtained without any further annealing process. An equivalent SiO2 thickness of 0.40 nm on the RuO2 sidewall was also achieved. It is concluded that this technology has reached the requirements for gigabit DRAM capacitors.

DOI： 10.1023/a:1009938909239

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：IOP Publishing  

(Ba, Sr)TiO3 (BST) films were prepared on Ru bottom electrodes by electron cyclotron resonance chemical vapor deposition at extremely low temperature and rapid thermal annealing (RTA). Leakage current characteristics were improved by lowering the BST deposition temperature down to 120°C. (Ba+Sr)-rich films with a (Ba+Sr)/Ti ratio of 1.1–1.5 had lower leakage current densities than stoichiometric and Ti-rich films with a ratio of 0.8–0.9. Cross sectional transmission electron microscopy observations showed that the 120°C-deposited and 700°C-RTA-treated (Ba+Sr)-rich film had a granular structure and smooth interfaces with the electrodes. The stoichiometric and Ti-rich films had columnar structures and larger interface roughness. As a result, low leakage current density less than 10-7 A/cm2 at ±1 V were obtained for 30 nm-thick BST films with a (Ba+Sr)/Ti ratio of 1.1–1.5 by combination of 120°C deposition and 700°C RTA.

DOI： 10.1143/jjap.38.2200

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Institute of Electrical and Electronics Engineers (IEEE)  

A Gb-scale DRAM stacked capacitor technology with (Ba,Sr)TiO/sub 3/ thin films is described, The four-layer RuO/sub 2//Ru/TiN/TiSi/sub x/, storage node configuration allows 500/spl deg/C processing and fine-patterning down to the 0.20 /spl mu/m size by electron beam lithography and reactive ion etching. Good insulating (Ba/sub 0.4/Sr/sub 0.6/)TiO/sub 3/ (BST) films with an SiO/sub 2/ equivalent thickness of 0.65 nm on the electrode sidewalls and leakage current of 1/spl times/10/sup -/6 A/cm/sup 2/ at 1 V are obtained by ECR plasma MOCVD without any post-deposition annealing, A lateral step coverage of 50% for BST is observed on the 0.2 /spl mu/m size storage node pattern, and the BST thickness on the sidewalls is very uniform, thanks to the ECR downflow plasma. Using this stacked capacitor technology, a sufficient cell capacitance of 25 fF for 1 Gb DRAMs can be achieved in a capacitor area of 0.125 /spl mu/m/sup 2/ with only the 0.3 /spl mu/m high-storage electrodes.

DOI： 10.1109/16.595934

記述言語：英語   掲載種別：研究論文（その他学術会議資料等）   出版者・発行元：Institute of Electrical and Electronics Engineers (IEEE)  

A stacked high-/spl epsiv//sub r/ capacitor is fabricated using a 550/spl deg/C-process-tolerant RuO/sub 2//Ru storage node on a TiN-capped plug and an ECR plasma MOCVD (Ba,Sr)TiO/sub 3/ (BST) thin film with small SiO/sub 2/ equivalent thickness (t/sub eq/) of 0.40 nm. The contact resistance (Rc) of a 0.15 /spl mu/m diameter (/spl phi/) contact is as low as 50 k/spl Omega/. With this capacitor technology, a cell capacitance (Cs) of 25 fF is achieved in projected areas of 0.055 /spl mu/m/sup 2/ for 4 Gbit DRAMs and 0.031 /spl mu/m/sup 2/ for 16 Gbit DRAMs with 0.25 /spl mu/m- and 0.37 /spl mu/m-high storage nodes.

DOI： 10.1109/iedm.1996.554071

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Springer Nature  

Physical and electrical properties are investigated for (Ba, Sr)TiO3 (BST) films prepared by electron cyclotron resonance (ECR) plasma chemical vapor deposition (CVD) at relatively low temperatures, between 450 °C and 500 °C. The crystallinity of BST, estimated by X-ray diffraction and from the grain size, is greatly improved when the temperature is raised from 450 °C to 500 °C. Also better crystallinity is obtained for films grown at a deposition rate of 1.1 nn/min than at 2.7 nm/min. The mass transport rates of metal organic sources under our deposition conditions are estimated. The BST film composition is precisely controlled using the results of the investigation on mass transport. At near stoichiometric composition, i.e., (Ba+Sr)/Ti=0.97, and Ba/(Ba+Sr)=0.4, the films grown at 500 °C are found to have the largest dielectric constant, measured using flat capacitors with Pt bottom electrodes. A dielectric constant of 160 is obtained for 27 nm thick films grown at 500 °C and at 1.1 nm/min, without post-deposition annealing. These films exhibit the smallest SiO2 equivalent thickness of 0.65 nm and a leakage current density of 4.6x10−7 A/cm2 at plus IV.

DOI： 10.1557/proc-433-3

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：IOP Publishing  

(Ba, Sr)TiO3 films deposited by electron cyclotron resonance plasma chemical vapor deposition at 450° C and 500° C are investigated. The crystallinity, evaluated by X-ray diffraction and by measuring grain size, and electrical properties of films were evaluated for changes in deposition temperature, deposition rate, and Ba content, without a post-deposition annealing. Slower deposition rates as well as higher deposition temperatures were found to improve film crystallinity. Evaluation of electrical properties and film crystallinity revealed that the optimum Ba content of a film deposited at 500° C was 0.4. A 27 nm thick film deposited on a Pt substrate at 500° C and at 1.1 nm/min with a Ba content of 0.4 exhibited a SiO2 equivalent thickness of 0.65 nm and a leakage current density of 4.6×10-7 A/cm2 at 1 V. The film composition was found to be sufficiently uniform throughout, i.e., from the top to the side of the films on a stacked bottom electrode.

DOI： 10.1143/jjap.35.5089

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元： NEC CORPORATION  

The high-dielectric-constant material of (Ba,Sr)TiO3 [BST] was investigated for application as thin films in Gbit DRAM capacitors. We developed a new capacitor technology involving the preparation of a thin BST film by Electron Cyclotron Resonance (ECR) plasma Chemical Vapor Deposition (CVD) over a RuO2/Ru/TiN/TiSx storage node contacting a poly-Si plug. Temperature endurance of the RuO2/Ru/TiN/TiSix storage node at 500 degrees C was confirmed by capacitance-frequency dispersion analysis of a small-size capacitor. At this temperature, capacitor-quality BST films were prepared with a BST deposition rate of 1.1 nm/min and a Ba:Sr:Ti film composition of 0.4:0.6:1.03. The ECR-CVD also enables uniform deposition of BST films on the electrode sidewalls. Good insulating BST films with a small SiO2 equivalent thickness of 0.65 nm on the electrode sidewalls were obtained. The leakage current density was 1 x 10(-6) A/cm(2) at an applied voltage of 1.0 V. A simple calculation shows that a cell capacitance of 25 fF in the 1 Gbit DRAM capacitor area of 0.125 mu m(2) is achieved with a storage electrode height of 0.3 mu m.

記述言語：英語   掲載種別：研究論文（その他学術会議資料等）   出版者・発行元：Institute of Electrical and Electronics Engineers (IEEE)  

A high dielectric constant (Ba,Sr)TiO/sub 3/ [BST] based stacked capacitor with new RuO/sub 2//Ru/TiN/TiSi/sub x/ storage nodes was developed for Gbit-scale DRAMs. Good insulating BST films with a small t/sub eq/ of 0.65 nm on the electrode sidewalls were obtained by ECR MOCVD. The four-layer storage node allows 500/spl deg/C processing and fine-patterning down to 0.20 /spl mu/m by EB lithography and RIE. A cell capacitance of 25 fF in 0.125 /spl mu/m/sup 2/ is achieved using 0.3 /spl mu/m-high storage electrodes for 1 Gbit DRAMs.

DOI： 10.1109/iedm.1995.497196

担当区分：筆頭著者,　責任著者   記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Springer Nature  

SrTiO3 thin films with various compositions have been prepared on Pt coated sapphire substrates by electron cyclotron resonance plasma chemical vapor deposition at 450 °C and 600 °C. The stoichiometric (Sr/(Sr+Ti)=0.50) films have maximum dielectric constants (εr) of 190 for the 600 °C deposition and 170 for the 450 °C deposition. The dielectric constant decreases abruptly with increasing or decreasing the Sr/(Sr+Ti) value from the stoichiometry, especially for the 450 °C deposition. The Ti-rich films include titanium suboxide (TiOx). In the Sr-rich films, excess SrO is thought to be inserted into the SrO plane and TiO2 plane in SrTiO3. In addition, SrCO3 is included in Sr-rich films. The concentration of these impurities is greater for the 450 °C deposition than for the 600 °C deposition. The leakage current density increases with increasing the Sr/(Sr+Ti) value, and the leakage current density for the 450 °C deposition is larger than for the 600 °C deposition in the Sr-rich composition region. These impurity phases may be related to the higher leakage current density. These results suggest that precise composition control in stoichiometry is necessary to deposit SrTiO3 films with superior electrical properties.

DOI： 10.1557/proc-361-325

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：AIP Publishing  

(Ba0.5Sr0.5)TiO3 thin films were prepared by ion beam sputtering from powder targets with (Ba+Sr)/Ti ratios ranging from 0.80 to 1.50. All of the perovskite (Ba,Sr)TiO3 films were single phase except for the film with a (Ba+Sr)/Ti ratio of 1.41. The dielectric constant values notably depended on the (Ba+Sr)/Ti ratio for films thicker than 70 nm. The highest dielectric constant of 580 was achieved for the 5% (Ba+Sr) rich film. This (Ba+Sr)/Ti ratio dependence was diminished by the thickness dependence for thinner films. The grain sizes for the 9% (Ba+Sr) rich film and for the 6% (Ba+Sr) poor film ranged from 70 to 100 nm and from 30 to 60 nm, respectively. This grain size difference could explain why slightly A‐site rich (Ba,Sr)TiO3 films have a larger dielectric constant than A‐site poor films.

DOI： 10.1063/1.111818

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Elsevier B.V.  

The magnetic susceptibility, ~151n Knight shift and ~3Cu NQR frequency v o in Yblnl_xTxCu 4 (T = Ag and Au) with
x _< 0.1 have been measured in order to investigate the valence phase transition at T~ = 40 K. For x = 0 they exhibit drastic
changes at T~. The Ag or Au substitution increases T, and also decreases Vo, which is mainly ascribed to an increase in its
electronic contribution and suggests a change in the 4f and conduction electron hybridization. The effect of the Ag
substitution on T~ and Uo is more remarkable, probably because of a heavy fermion character of YbAgCu4.

DOI： 10.1016/0304-8853(92)90968-t

開催年月日： 2026年3月

記述言語：日本語   会議種別：口頭発表（一般）  

国名：日本国  

researchmap

開催年月日： 2026年1月

記述言語：日本語   会議種別：口頭発表（一般）  

国名：日本国  

researchmap

開催年月日： 2025年12月

記述言語：英語   会議種別：ポスター発表  

国名：日本国  

researchmap

開催年月日： 2025年12月

記述言語：英語   会議種別：ポスター発表  

国名：日本国  

researchmap

開催年月日： 2025年12月

記述言語：英語   会議種別：ポスター発表  

国名：日本国  

researchmap

開催年月日： 2025年12月

記述言語：英語   会議種別：ポスター発表  

国名：日本国  

researchmap

開催年月日： 2025年3月

記述言語：日本語   会議種別：口頭発表（一般）  

国名：日本国  

開催年月日： 2025年3月

記述言語：日本語   会議種別：口頭発表（一般）  

国名：日本国  

開催年月日： 2025年3月

記述言語：英語   会議種別：口頭発表（一般）  

国名：日本国  

開催年月日： 2024年9月 - 2024年10月

記述言語：英語   会議種別：口頭発表（一般）  

開催地：Hersonissos, Crete   国名：ギリシャ共和国  

開催年月日： 2024年9月 - 2024年10月

記述言語：英語   会議種別：ポスター発表  

開催地：Hersonissos, Crete   国名：ギリシャ共和国  

開催年月日： 2024年3月

記述言語：日本語   会議種別：口頭発表（一般）  

開催地：東京都市大学   国名：日本国  

開催年月日： 2024年3月

記述言語：日本語   会議種別：ポスター発表  

開催地：東京都市大学   国名：日本国  

開催年月日： 2024年3月

記述言語：日本語   会議種別：口頭発表（一般）  

開催地：東京都市大学   国名：日本国  

開催年月日： 2023年12月

記述言語：英語   会議種別：口頭発表（招待・特別）  

開催地：Kyoto International Conference Center   国名：日本国  

開催年月日： 2023年7月

記述言語：英語   会議種別：口頭発表（一般）  

開催地：Egmond aan Zee   国名：オランダ王国  

開催年月日： 2023年7月

記述言語：英語   会議種別：口頭発表（一般）  

開催地：Egmond aan Zee   国名：オランダ王国  

開催年月日： 2023年7月

記述言語：英語   会議種別：口頭発表（一般）  

開催地：Egmond aan Zee   国名：オランダ王国  

開催年月日： 2023年7月

記述言語：英語   会議種別：口頭発表（一般）  

開催地：Egmond aan Zee   国名：オランダ王国  

開催年月日： 2023年7月

記述言語：英語   会議種別：口頭発表（一般）  

開催地：Egmond aan Zee   国名：オランダ王国  

開催年月日： 2023年7月

記述言語：英語   会議種別：口頭発表（招待・特別）  

開催地：Technische Universität Wien   国名：オーストリア共和国  

開催年月日： 2023年1月

記述言語：英語   会議種別：ポスター発表  

開催地：Kyushu university, Fukuoka   国名：日本国  

開催年月日： 2022年12月

記述言語：英語   会議種別：口頭発表（招待・特別）  

国名：日本国  

開催年月日： 2022年12月

記述言語：英語   会議種別：口頭発表（招待・特別）  

国名：日本国  

記述言語：日本語   会議種別：口頭発表（招待・特別）  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

Solid-phase Crystallization of Sputter-deposited ZnON Films and Their Impacts as Seed Layers for ZnO:Al Transparent Conducting Oxides

記述言語：日本語  

国名：日本国  

記述言語：その他  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：日本語   会議種別：口頭発表（一般）  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：日本語   会議種別：口頭発表（招待・特別）  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：英語   会議種別：口頭発表（招待・特別）  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：日本語   会議種別：口頭発表（一般）  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：英語  

国名：カナダ  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：英語  

国名：日本国  

記述言語：英語  

国名：日本国  

Amorphous Oxide Semiconductor Based TFTs: Their Current Situation and Issues

記述言語：英語  

国名：ドイツ連邦共和国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：英語   会議種別：口頭発表（招待・特別）  

国名：アメリカ合衆国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：英語  

国名：大韓民国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：英語   会議種別：口頭発表（一般）  

国名：イタリア共和国  

記述言語：日本語   会議種別：ポスター発表  

国名：日本国  

記述言語：英語  

国名：日本国  

記述言語：英語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：英語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：英語  

国名：イタリア共和国  

記述言語：日本語  

国名：日本国  

記述言語：英語  

国名：日本国  

記述言語：英語  

国名：日本国  

記述言語：英語  

国名：アメリカ合衆国  

記述言語：日本語  

国名：日本国  

記述言語：英語  

国名：フランス共和国  

記述言語：英語  

国名：アメリカ合衆国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：英語  

国名：アメリカ合衆国  

記述言語：英語  

国名：アメリカ合衆国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：英語  

国名：アメリカ合衆国  

記述言語：日本語  

国名：日本国  

記述言語：英語   会議種別：口頭発表（一般）  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：英語  

国名：グレートブリテン・北アイルランド連合王国(英国)  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

記述言語：日本語  

国名：日本国  

種別：査読等 

外国語雑誌　査読論文数：1

種別：査読等 

外国語雑誌　査読論文数：1

種別：査読等 

外国語雑誌　査読論文数：3

種別：査読等 

外国語雑誌　査読論文数：3

種別：査読等 

外国語雑誌　査読論文数：3

種別：査読等 

外国語雑誌　査読論文数：6

種別：査読等 

外国語雑誌　査読論文数：4

種別：査読等 

外国語雑誌　査読論文数：2

種別：査読等 

外国語雑誌　査読論文数：7

種別：査読等 

外国語雑誌　査読論文数：1

種別：査読等 

外国語雑誌　査読論文数：7

種別：査読等 

外国語雑誌　査読論文数：1

対象：社会人・一般,　学術団体,　企業,　市民団体,　行政機関

種別：その他

研究室のアクティビティ（エキシマレーザーアニール固相結晶化技術、ワイドギャップ半導体へのエキシマレーザードーピング）を来場者（主に産業界）に紹介した。