Updated on 2025/04/12

Information

 

写真a

 
YAMAMOTO KEISUKE
 
Organization
Faculty of Engineering Sciences Department of Advanced Energy Science and Engineering Professor
Abolition organization Global Innovation Center(Concurrent)
Interdisciplinary Graduate School of Engineering Sciences Department of Interdisciplinary Engineering Sciences(Concurrent)
Title
Professor
Contact information
メールアドレス
Profile
2013年1月~2016年10月まで、グリーンアジア国際教育センターの助教として、「文部科学省 博士課程教育リーディングプログラム グリーンアジア国際戦略プログラム」の運営推進・コース学生指導を担当した。 2016年11月からは総合理工学研究院に異動し、「先端半導体の材料・プロセス・デバイス技術の開発」を中心に研究および総合理工学府大学院生・工学部融合基礎工学科学部生の指導を行なっている。
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Degree

  • Ph. D. (Engineering)

Research History

  • なし   

Research Interests・Research Keywords

  • Research theme: SiGe process technology and evaluation

    Keyword: SiGe, contact, strain, defect

    Research period: 2019.12

  • Research theme: Ge applied novel devices

    Keyword: Ge spin MOSFET, flexible Ge TFT, Ge-on-Insulator

    Research period: 2019.4

  • Research theme: Fundamental research for SiC power devices

    Keyword: 3C-SiC, gate stack, Ohmic contact, FET

    Research period: 2011.10

  • Research theme: Fundamental research for Ge-CMOS devices

    Keyword: Ge channel, Ge-on-Insulator, high-k/Ge, metal gate, metal/Ge contact, metal S/D

    Research period: 2010.4

Awards

  • IWDTF Best Paper Award

    2023.10   Fabrication and Electrical Characterization of Ge-on-Insulator based on Ge-on-Nothing Technology

Papers

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Presentations

  • Fabrication of a Ge gate stack using plasma irradiation and low-temperature annealing for Ge applications Invited International conference

    H. Kuwazuru, D. Wang, and K. Yamamoto

    14th International WorkShop on New Group IV Semiconductor Nanoelectronics  2023.12 

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    Event date: 2023.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tohoku Univ.   Country:Japan  

  • Inversion Mode n-channel TFT Fabricated on Solid-Phase Crystallized Polycrystalline Ge at Low Temperature Improved by Metal Induced Dopant Activation Invited International conference

    L. Huang, K. Moto, K. Igura, T. Ishiyama, K. Toko, D. Wang, K. Yamamoto

    14th International WorkShop on New Group IV Semiconductor Nanoelectronics  2023.12 

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    Event date: 2023.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tohoku Univ.   Country:Japan  

  • Electrical and Structural Characterization of Thermally Oxidized Yttrium Oxide on Germanium Invited International conference

    K. Yamamoto, W.-C. Wen, D. Wang, and H. Nakashima

    14th International WorkShop on New Group IV Semiconductor Nanoelectronics  2023.12 

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    Event date: 2023.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tohoku Univ.   Country:Japan  

  • Thermally oxidized Yttrium Oxide on Germanium for n-MOS Capacitor and Field-Effect Transistor Invited International conference

    K. Yamamoto, W.-C. Wen, D. Wang, and H. Nakashima

    244th ECS meeting  2023.10 

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    Event date: 2023.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Gothenburg   Country:Sweden  

    Germanium (Ge) has many exciting material characteristics, such as high carrier mobility and narrow bandgap in the near-infrared range. Thus it is suitable for various applications. A high-quality insulating film on Ge is required to apply Ge to novel electronic devices successfully. It is well known that GeO2 on Ge has good electrical characteristics as a gate insulator or interlayer (IL), similar to SiO2 on Si [1]. Unlike SiO2, however, GeO2 is thermodynamically unstable under atmospheric pressure at typical oxidation temperatures (~400 °C) and volatilizes as GeO [2,3]. Several methods have been developed to suppress GeO volatilization from the surface. For example, transition metals such as yttrium (Y) have been introduced into GeO2. Yttrium (Y)-doped GeO2 has excellent thermal, chemical, and electrical characteristics. In the capacitance–voltage measurement, it shows a low interface state density (Dit) and a narrow hysteresis corresponding to the border trap (BT) density (Nbt) of gate insulators [4]. Based on the above studies, we focused on metal Y deposition with subsequent thermal oxidation as an efficient alternative method to deposit Y-oxide as a gate insulator on Ge. This method has been studied to deposit Y2O3 as a gate insulator on Si [5]. Moreover, metal oxidation has been used to form various gate insulators on Ge, such as Al [6] and Hf [7]. In this study, we expect a capping layer of Y and oxidized Y to suppress GeO volatilization and stabilize the interface. We fabricated and evaluated metal-oxide-semiconductor (MOS) capacitors and MOS field-effect transistors (FETs) with either a thermally oxidized Y or a thermally oxidized Ge oxide layer. The structural analysis found that the insulator was divided into three layers: Y2O3, YGeO3, and GeOx from the top. The oxidation temperature affected only the thickness of the bottom GeOx layer. We found that the Y-oxide gate stack had better electrical characteristics and a lower Dit and Nbt than the thermally oxidized GeOx insulator. In contrast, the Dit–energy distribution and Nbt temperature dependence of the Y-oxide gate insulator were similar to those of the GeOx gate insulator. We examined these observations, including the structural analysis results. We found that thermally oxidized Y had a distinct advantage over thermally oxidized Ge oxide: the possibility of controlling the structure and electrical characteristics of the Ge gate stack, such as the GeOx thickness and the BT signal origin.

  • Fabrication of Inversion Mode n-channel TFT on Solid-Phase Crystallized Polycrystalline Ge

    L. Huang, K. Moto, T. Ishiyama, K. Toko, D. Wang, K. Yamamoto

    2023年第84回応用物理学会秋季学術講演会  2023.9 

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    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本城ホール他   Country:Japan  

  • リセスチャネル化によるメタルS/D 型Ge n-MOSFET の電流駆動力向上(III)

    鍬釣 一、王 冬、山本 圭介

    2023年第84回応用物理学会秋季学術講演会  2023.9 

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    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本城ホール他   Country:Japan  

  • Inversion Mode n-channel TFT on Polycrystalline Ge Formed by Solid-Phase Crystallization International conference

    L. Huang, K. Moto, T. Ishiyama, K. Toko, D. Wang, and K. Yamamoto

    2023 International Conference on Solid State Device and Materials (SSDM 2023)  2023.9 

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    Event date: 2023.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya Congress Center   Country:Japan  

  • Various Metal Contacts on Polycrystalline Ge with Amorphous Interlayer Formed by ZrN Sputter-Deposition International conference

    K. Moto, K. Toko, T. Takayama, T. Ishiyama, K. Yamamoto

    2023 International Conference on Solid State Device and Materials (SSDM 2023)  2023.9 

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    Event date: 2023.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya Congress Center   Country:Japan  

  • Control of schottky barrier height at metal/polycrystalline Ge interfaces with fermi-level pinning alleviation International conference

    K. Moto, K. Toko, T. Takayama, T. Ishiyama, and K. Yamamoto

    International Conference on Silicon Epitaxy and Heterostructures and International SiGe Technology and Device Meeting 2023 (ISTDM-ICSI 2023)  2023.5 

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    Event date: 2023.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Como   Country:Italy  

  • Evaluation of the physical properties of Ge-on-insulator based on Ge-on-Nothing and layer transfer International conference

    K. Yamamoto, D. Wang, R. Loo, C. Porret, J. Cho, K. Dessein, and V. Depauw

    International Conference on Silicon Epitaxy and Heterostructures and International SiGe Technology and Device Meeting 2023 (ISTDM-ICSI 2023)  2023.5 

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    Event date: 2023.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Como   Country:Italy  

  • Control of schottky barrier height at metal/polycrystalline Ge interfaces with fermi-level pinning alleviation International conference

    K. Moto, K. Toko, T. Takayama, T. Ishiyama, and K. Yamamoto

    International Conference on Silicon Epitaxy and Heterostructures and International SiGe Technology and Device Meeting 2023 (ISTDM-ICSI 2023)  2023.5 

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    Event date: 2023.5

    Language:English  

    Venue:Como   Country:Italy  

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  • Study on the Performance of Metal S/D Ge n-MOSFET with Recessed Channel Structure Invited International conference

    H. Kuwazuru, S. Nasu, D. Wang, and K. Yamamoto

    13th International WorkShop on New Group IV Semiconductor Nanoelectronics  2023.1 

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    Event date: 2023.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tohoku Univ.   Country:Japan  

  • Ge-on-Insulator from Ge-on-Nothing and Layer Transfer Invited International conference

    K. Yamamoto, D. Wang, R. Loo, C. Porret, J. Cho, K. Dessein, and V. Depauw

    13th International WorkShop on New Group IV Semiconductor Nanoelectronics  2023.1 

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    Event date: 2023.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tohoku Univ.   Country:Japan  

  • Inversion Mode n-channel TFT on Polycrystalline Ge Formed by Solid-Phase Crystallization Invited International conference

    L. Huang, K. Moto, T. Ishiyama, K. Toko, D. Wang, and K. Yamamoto

    13th International WorkShop on New Group IV Semiconductor Nanoelectronics  2023.1 

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    Event date: 2023.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tohoku Univ.   Country:Japan  

  • Low Temperature (~210 °C) Fabrication of Ge MOS Capacitor using Plasma Oxidation and Oxi-Nitridation for the Interlayer Formation International conference

    H. Kuwazuru, D. Wang, K. Yamamoto

    2023 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY  2023.10 

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    Event date: 2022.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:金沢市   Country:Japan  

  • Fabrication and Electrical Characterization of Ge-on-Insulator based on Ge-on-Nothing Technology International conference

    K. Yamamoto, D. Wang, R. Loo, C. Porret, J. Cho, K. Dessein, V. Depauw

    2023 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY  2023.10 

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    Event date: 2022.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:金沢市   Country:Japan  

    Ge-on-Insulator (GOI) is considered to be a necessary structure for novel Ge-based devices. This paper proposes an alternative approach for fabricating GOI based on the Ge-on-Nothing (GeON) template. In this approach, a regular macropore array is formed by lithography and dry etching. These pores close and merge upon annealing, forming a suspended monocrystalline Ge membrane on one buried void. GOI is fabricated by direct bonding of GeON on Si carrier substrates, using an oxide bonding interface, and subsequent detachment. The fabricated GOI shows uniform physical properties as demonstrated using micro-photoluminescence measurements. Its electrical characteristics and cross-sectional structure are superior to those of Smart-CutTM GOI. To demonstrate its application potential, back-gate GOI capacitors and MOSFETs are fabricated. Their characteristics nicely agree with the theoretically calculated one and show typical MOSFET operations, respectively, which indicates promising Ge crystallinity. This method, therefore, shows the potential to provide high-quality GOI for advanced Ge application devices.

  • First Demonstration of Rectifying Schottky Contact on Polycrystalline P-Type Ge Using ZrN Electrode International conference

    K. Moto, K. Toko, T. Takayama, T. Imajo, K. Yamamoto

    2022 International Conference on Solid State Device and Materials (SSDM 2022)  2022.9 

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    Event date: 2022.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya Univ.   Country:Japan  

  • 金属/多結晶Ge界面におけるフェルミレベルピニングの緩和とショットキー障壁制御

    高山 智成、茂藤 健太、都甲 薫、王 冬、山本 圭介

    2022年第83回応用物理学会秋季学術講演会  2022.9 

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    Event date: 2022.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東北大学   Country:Japan  

  • リセスチャネル化によるメタルS/D型Ge n-MOSFETの電流駆動力向上(II)

    那須 新悟、王 冬、山本 圭介

    2022年第83回応用物理学会秋季学術講演会  2022.9 

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    Event date: 2022.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東北大学   Country:Japan  

  • 多結晶p型Ge上におけるショットキー整流性コンタクトの形成

    茂藤 健太、都甲 薫、高山 智成、今城 利文、山本 圭介

    2022年第83回応用物理学会秋季学術講演会  2022.9 

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    Event date: 2022.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東北大学   Country:Japan  

  • Fabrication and Characterization of Ge n-MOS and n-MOSFET with Thermally Oxidized Yttrium Gate Insulator International conference

    W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima

    9th International Symposium on Control of Semiconductor Interfaces (ISCSI-IX)  2022.9 

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    Event date: 2022.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya Univ.   Country:Japan  

  • Fabrication and evaluation of polycrystalline Ge-based thin-film transistors on glass International conference

    T. Takayama, K. Moto, K. Yamamoto, T. Imajo, K. Toko

    The 5th International Union of Materials Research Societies International Conference of Young Researchers on Advanced Materials (IUMRS-ICYRAM 2022)  2022.8 

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    Event date: 2022.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hospital Campus, Kyushu Univ.   Country:Japan  

  • Novel group IV semiconductor materials and devices for beyond Si technology Invited International conference

    K. Yamamoto, T. Matsuo, D. Wang, K. Moto, K. Toko, H. Nakashima

    The 5th International Union of Materials Research Societies International Conference of Young Researchers on Advanced Materials (IUMRS-ICYRAM 2022)  2022.8 

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    Event date: 2022.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hospital Campus, Kyushu Univ.   Country:Japan  

  • Fabrication of Ge MOSFET at low temperature (~250°C) for spintronics application International conference

    S. Nasu, T. Matsuo, K. Yamamoto, D. Wang

    The 5th International Union of Materials Research Societies International Conference of Young Researchers on Advanced Materials (IUMRS-ICYRAM 2022)  2022.8 

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    Event date: 2022.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hospital Campus, Kyushu Univ.   Country:Japan  

  • 3C-SiCへの高品質ゲートスタック形成とMOSFET応用 Invited

    山本 圭介

    (公財)科学技術交流財団 第4回「厳環境下IoTワイドギャップ素子研究会」  2022.7 

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    Event date: 2022.7

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:ウインクあいち   Country:Japan  

  • 3C-SiCへの高品質ゲートスタック形成とMOSFET応用 Invited

    山本 圭介

    (公財)科学技術交流財団 第4回「厳環境下IoTワイドギャップ素子研究会」  2022.7 

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    Event date: 2022.7

    Language:Japanese  

    Venue:ウインクあいち   Country:Japan  

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  • 電子・光デバイス応用に向けた金属/GeSn 接合の低温形成

    清水 昇、王 一、 山本 圭介、張 師宇、中塚 理、王 冬

    2022年第69回応用物理学会春季学術講演会  2022.3 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • 高移動度3C-SiC n-MOSFET の作製と高温動作実証

    山本 圭介、王 冬、中島 寛、菱木 繁臣、浦谷 泰基、坂井田 佳紀、川村 啓介

    2022年第69回応用物理学会春季学術講演会  2022.3 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Achievement of High Channel Mobility of 3C-SiC n-MOSFET with the Gate Stack Formed at Low Temperature International conference

    Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima, Shigeomi Hishiki, Hiroki Uratani, Yoshiki Sakaida, Keisuke Kawamura

    2021 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY  2021.11 

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    Event date: 2021.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:online   Country:Other  

  • Fabrication of Ge-on-Insulator By Epitaxial Growth and Ion-Implanted Exfoliation for Electronics and Opt-Electronics Applications Invited International conference

    Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima

    240th ECS meeting  2021.10 

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    Event date: 2021.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Orlando, FL   Country:United States  

  • 固相成長GeSn薄膜トランジスタにおけるSn組成の影響

    茂藤 健太、山本 圭介、今城 利文、末益 崇、中島 寛、都甲 薫

    2021年第82回応用物理学会秋季学術講演会  2021.9 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • GeスピンMOSFETのための低温(~250°C)デバイスプロセスの構築

    松尾 拓朗、山本 圭介、王 冬

    2021年第82回応用物理学会秋季学術講演会  2021.9 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • リセスチャネル化によるメタルS/D型Ge n-MOSFETの電流駆動力向上

    松尾 拓朗、山本 圭介、王 冬

    2021年第82回応用物理学会秋季学術講演会  2021.9 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Sn Doping Effects on Polycrystalline Germanium Thin-Film Transistors on Glass International conference

    Kenta Moto, Keisuke Yamamoto, Toshifumi Imajo, Takashi Suemasu, Hiroshi Nakashima, Kaoru Toko

    2021 International Conference on Solid State Device and Materials (SSDM 2021)  2021.9 

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    Event date: 2021.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:online   Country:Other  

  • Low-Temperature Fabrication of Ge MOS Capacitor with Wet Oxidized Yttrium Interlayer International conference

    Keisuke Yamamoto, Kento Iseri, Dong Wang, Hiroshi Nakashima

    2021 International Conference on Solid State Device and Materials (SSDM 2021)  2021.9 

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    Event date: 2021.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:online   Country:Other  

  • Schottky Barrier Height Control at Metal/Ge Interface by Insertion of Nitrogen Contained Amorphous Layer Invited International conference

    Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima

    239th ECS meeting  2021.5 

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    Event date: 2021.5 - 2021.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Online   Country:United States  

  • エッチバック法を用いたGe-on-Insulator作製に向けたウェットエッチング法の検討

    清水 昇、山本 圭介、王 冬、中島 寛

    第68回応用物理学会春季学術講演会  2021.3 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Sn Doping Effects in Solid-Phase Crystallized Ge Thin-Film Transistors International conference

    Kenta Moto, Keisuke Yamamoto, Takashi Suemasu, Hiroshi Nakashima, Kaoru Toko

    PRiME 2020  2020.10 

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    Event date: 2020.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Online   Country:Other  

  • Isotropic Wet Etching and Improving Surface Flatness of Ge for Etchback Ge-on-Insulator Fabrication Invited International conference

    Noboru Shimizu, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima

    PRiME 2020  2020.10 

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    Event date: 2020.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Online   Country:Other  

  • Border-Trap Characterization for Ge Gate Stacks with Thin GeOX layer Using Deep-Level Transient Spectroscopy Invited International conference

    Hiroshi Nakashima, Wei-Chen Wen, Keisuke Yamamoto, Dong Wang

    PRiME 2020  2020.10 

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    Event date: 2020.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Online   Country:Other  

  • Thermally Oxidized Yttrium and Scandium Gate Dielectrics on Germanium with High Interfacial and Film Qualities International conference

    Hiroki Kanakogi, Wei-Chen Wen, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima

    2020 International Conference on Solid State Device and Materials (SSDM 2020)  2020.9 

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    Event date: 2020.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:online   Country:Other  

  • Study on Position of Border Traps in Al2O3/GeOX/p-Ge Gate Stacks Using Deep-Level Transient Spectroscopy International conference

    Wei-Chen Wen, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima

    8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII)  2019.11 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tohoku Univ.   Country:Japan  

  • 新規電子デバイス応用に向けたGeゲートスタックの低温(<300°C)形成

    井芹 健人、温 偉辰、山本 圭介、王 冬、中島 寛

    第80回応用物理学会秋季学術講演会  2019.9 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  • SiO2/Al2O3絶縁膜を有する3C-SiC n-MOSキャパシタの固定電荷と界面ダイポール解析

    岡 龍誠、山本 圭介、王 冬、中島 寛、菱木 繁臣、川村 啓介

    第80回応用物理学会秋季学術講演会  2019.9 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  • SiO2/Al2O3絶縁膜を有する3C-SiC n-MOSキャパシタとn-MOSFET動作

    山本 圭介、岡 龍誠、王 冬、中島 寛、菱木 繁臣、川村 啓介

    第80回応用物理学会秋季学術講演会  2019.9 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  • Low temperature (<300oC) Fabrication of Ge MOS Structure for Advanced Electronic Devices International conference

    Kento Iseri, Wei-Chen Wen, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima

    2019 International Conference on Solid State Device and Materials (SSDM 2019)  2019.9 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya Univ.   Country:Japan  

  • Demonstration of n-MOSFET operation and charge analysis of SiO2/Al2O3 gate dielectric on (111) oriented 3C-SiC International conference

    Ryusei Oka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima, Sigeomi Hishiki, Keisuke Kawamura

    2019 International Conference on Solid State Device and Materials (SSDM 2019)  2019.9 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya Univ.   Country:Japan  

  • Conduction Type Control of Ge-on-Insulator: Combination of Smart-Cut and Defect Elimination International conference

    K. Yamamoto, K. Nakae, H. Akamine, D. Wang, H. Nakashima, Md. M. Alam, K. Sawano, Z. Xue, M. Zhang, Z. Di

    2nd Joint ISTDM / ICSI 2019 Conference 10th International SiGe Technology and Device Meeting (ISTDM) 12th International Conference on Silicon Epitaxy and Heterostructures  2019.6 

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    Event date: 2019.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Madison, Wisconsin   Country:United States  

  • Fabrication of Ge MOS Capacitor with Metal Yttrium Oxidation Invited International conference

    Keisuke Yamamoto, Kentaro Akiyama, Kento Iseri, Wei-Chen Wen, Dong Wang, Hiroshi Nakashima

    12th International WorkShop on New Group IV Semiconductor Nanoelectronics  2018.12 

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    Event date: 2018.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tohoku Univ.   Country:Japan  

  • Smart-Cut法を用いて作製したGe-on-Insulatorの極性変化

    仲江 航平、薛 飛達、山本 圭介、王 冬、中島 寛、Miao Zhang、Zhongying Xue、Zenfeng Di

    第79回応用物理学会秋季学術講演会  2018.9 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  • 電子ビーム蒸着によるGe上へのY酸化物系ゲート絶縁膜形成

    秋山 健太郎、井芹 健人、温 偉辰、山本 圭介、王 冬、中島 寛

    第79回応用物理学会秋季学術講演会  2018.9 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  • Low-temperature fabrication of Ge MOS capacitors for spintronics and flexible electronics application

    Wei-Chen Wen、Keisuke Yamamoto、Dong Wang、Hiroshi Nakashima

    第79回応用物理学会秋季学術講演会  2018.9 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  • Ambipolar operation of asymmetric Ge Schottky tunneling source field-effect transistor fabricated on Ge-on-Insulator International conference

    K. Yamamoto, K. Nakae, D. Wang, H. Nakashima, Z. Xue, M. Zhang, Z. Di

    2018 International Conference on Solid State Device and Materials (SSDM 2018)  2018.9 

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    Event date: 2018.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Impact of Al2O3 interlayer for metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC for electronic device application International conference

    K. Yamamoto, D. Wang, H. Nakashima, S. Hishiki, K. Kawamura

    2018 International Conference on Solid State Device and Materials (SSDM 2018)  2018.9 

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    Event date: 2018.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • 遷移金属窒化物を用いた金属/Geコンタクトの障壁制御

    山本 圭介、光原 昌寿、王 冬、中島 寛

    第65回応用物理学会春季学術講演会  2018.3 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学西早稲田キャンパス   Country:Japan  

  • 非晶質Ge界面層とNによるGeコンタクトの外因性準位とSファクターの変調(Ⅱ)

    板屋 航, 仲江 航平, 山本 圭介, 王 冬, 中島 寛

    第78回応用物理学会秋季学術講演会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡市・福岡国際会議場   Country:Japan  

  • [講演奨励賞受賞記念講演] 非晶質Zr-Ge-N層上への金属堆積による低抵抗Geコンタクトの形成

    岡本 隼人, 山本 圭介, 王 冬, 中島 寛

    第64回応用物理学会春季学術講演会  2017.3 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜市・パシフィコ横浜   Country:Japan  

  • Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer Invited International conference

    Keisuke Yamamoto, Hayato Okamoto, DONG WANG, Hiroshi Nakashima

    10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"  2017.2 

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    Event date: 2017.2

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Tohoku University   Country:Japan  

  • Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer International conference

    Hayato Okamoto, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima

    2016 International Conference on Solid State Device and Materials (SSDM 2016)  2016.9 

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    Event date: 2016.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tsukuba International Congress Center, Ibaraki   Country:Japan  

  • 非晶質Zr-Ge-N層上への金属堆積による低抵抗Geコンタクトの形成

    岡本 隼人, 山本 圭介, 王 冬, 中島 寛

    第77回応用物理学会秋季学術講演会  2016.9 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟県・朱鷺メッセ   Country:Japan  

  • Characterization of Ge Tunnel FET with Metal/Ge Junction International conference

    Keisuke Yamamoto, Hayato Okamoto, DONG WANG, Hiroshi Nakashima

    7th International Symposium on Control of Semiconductor Interfaces / International SiGe Technology and Device Meeting  2016.6 

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    Event date: 2016.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya University   Country:Japan  

    Other Link: http://istdm2014.org/index.html

  • 金属/Ge接合及びn+/Ge接合を用いたGeトンネルFETの作製と評価

    山本 圭介, 岡本 隼人, 王 冬, 中島 寛

    第63回応用物理学会春季学術講演会  2016.3 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学大岡山キャンパス   Country:Japan  

  • Barrier Height Modulation for Metal/Ge Contacts with Nitrogen-Contained Amorphous Interlayers International conference

    Keisuke Yamamoto, Ryutaro Noguchi, Masatoshi Mitsuhara, Minoru Nishida, Toru Hara, Dong Wang, Hiroshi Nakashima

    9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9)  2015.5 

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    Event date: 2015.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Universite de Montreal, Canada   Country:Canada  

    Other Link: http://www.icsi-epi.com/

  • Electrical Properties of Metal/Ge contacts with Nitrogen-Contained Amorphous Interlayers Invited International conference

    Keisuke Yamamoto, WANG DONG, Nakashima Hiroshi, Noguchi Ryutaro, Nishida Minoru, Mitsuhara Masatoshi, Hara Toru

    8th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"  2014.1 

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    Event date: 2015.1

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Tohoku University   Country:Japan  

  • 非晶質Ge界面層とNによるGeコンタクトの外因性準位とSファクターの変調

    山本 圭介, 王 冬, 中島 寛

    第75回応用物理学会秋季学術講演会  2014.9 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学札幌キャンパス   Country:Japan  

  • Fermi level pinning alleviation at the TiN, ZrN, and HfN/Ge interfaces International conference

    Yamamoto Keisuke, DONG WANG, Hiroshi Nakashima

    7th International Silicon-Germanium Technology and Device Meeting (ISTDM 2014)  2014.6 

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    Event date: 2014.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Swissotel Merchant Court   Country:Singapore  

    Other Link: http://istdm2014.org/index.html

  • TiN/Geコンタクトにおける低電子障壁発現機構の解明(Ⅱ)

    山本 圭介, 光原 昌寿, 吹留 佳祐, 野口 竜太郎, 西田 稔, 王 冬, 中島 寛

    第61回応用物理学会春季学術講演会  2014.3 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス   Country:Japan  

  • Fabrication of Metal-Nitride/Ge Contacts with Extremely Low Electron Barrier Height and Its Clarification of the Physical Origin Invited International conference

    Keisuke Yamamoto, WANG DONG, Nakashima Hiroshi

    7th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"  2014.1 

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    Event date: 2014.1

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Tohoku University   Country:Japan  

  • Fabrication of Metal-Nitride/Si Contactswith Low Electron Barrier Height Invited International conference

    Yamamoto Keisuke, DONG WANG, Hiroshi Nakashima

    224th ECS Meeting  2013.10 

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    Event date: 2013.10 - 2013.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:San Francisco, CA   Country:United States  

    Other Link: https://ecs.confex.com/ecs/224/webprogram/Paper25999.html

  • ゲートスタックへのHf導入によるメタル・ソース/ドレインGe p-MOSFETの高移動度化

    山本 圭介, 佐田 隆宏, 王 冬, 中島 寛

    電子情報通信学会 シリコン材料・デバイス研究会 (応用物理学会、シリコンテクノロジー分科会との合同開催)  2013.6 

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    Event date: 2013.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:機械振興会館   Country:Japan  

  • Metal Source/Drain Ge p-MOSFET with HfGe/Ge Contact International conference

    Yamamoto Keisuke, Takahiro Sada, DONG WANG, Hiroshi Nakashima

    8th International Conference on Silicon Epitaxy and Heterostructures(ICSI-8) 2013  2013.6 

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    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka   Country:Japan  

  • Fabrication of TiN/Si Contact with Low Electron Barrier Height and Its Application to Back-Gate MOSFET International conference

    Yamamoto Keisuke, Asakawa Kojiro, DONG WANG, Hiroshi Nakashima

    6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI) 2013  2013.6 

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    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka   Country:Japan  

  • TiN/Geコンタクトにおける低電子障壁発現機構の解明

    山本 圭介, 光原 昌寿, 西田 稔, 王 冬, 中島 寛

    第60回応用物理学会春季学術講演会  2013.3 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  • 整流性TiN/p-Geコンタクトに於ける表面パッシベーションの重要性

    山本 圭介, 王 冬, 中島 寛

    第73回応用物理学会学術講演会  2012.9 

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    Event date: 2012.9

    Presentation type:Oral presentation (general)  

    Venue:愛媛大学・松山大学   Country:Japan  

  • TiN/Geコンタクトに於けるフェルミレベルピンニング変調とMOSデバイスへの応用

    山本 圭介, 井餘田 昌俊, 王 冬, 中島 寛

    電子情報通信学会 シリコン材料・デバイス研究会 (応用物理学会、シリコンテクノロジー分科会との合同開催)  2012.6 

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    Event date: 2012.6

    Presentation type:Oral presentation (general)  

    Venue:名古屋大学 ベンチャービジネスラボラトリー   Country:Japan  

  • 低障壁TiN/n-Ge コンタクトの形成とコンタクト抵抗評価

    山本 圭介, 原田 健司, 楊 海貴, 王 冬, 中島 寛

    第59回応用物理学関係連合講演会  2012.3 

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    Event date: 2012.3

    Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  • HfGex ショットキー・ソース/ドレインGe p-MOSFET の作製

    山本 圭介, 佐田 隆宏, 山中 武, 坂本 敬太, 小島 秀太, 楊 海貴, 王 冬, 中島 寛

    第59回応用物理学関係連合講演会  2012.3 

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    Event date: 2012.3

    Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  • TiN ショットキー・ソース/ドレインGe n-MOSFET の作製

    山本 圭介, 山中 武, 原田 健司, 佐田 隆宏, 坂本 敬太, 小島 秀太, 王 冬, 中島 寛

    第59回応用物理学関係連合講演会  2012.3 

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    Event date: 2012.3

    Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  • High Performance of Ge MOSFETs with Bilayer-Passivated MOS Interface International conference

    K. Yamamoto, R. Ueno, T. Yamanaka, K. Hirayama, H. Yang, D. Wang, H. Nakashima

    7th International Conference on Si Epitaxy and Heterostructures (ICSI7)  2011.8 

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    Event date: 2011.8 - 2011.9

    Presentation type:Oral presentation (general)  

    Venue:Leuven   Country:Belgium  

  • 2層パッシベーション法で作製したGe-MOSFETの電気特性

    山本 圭介, 上野 隆二, 山中 武, 平山 佳奈, 楊 海貴, 王 冬, 中島 寛

    第58回応用物理学関係連合講演会  2011.3 

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    Event date: 2011.3

    Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  • Effects of Capping Layers on Solid-Phase Crystallization of Sn-Doped Ge Thin Films on Insulators Invited International conference

    R. Hashimoto, T. Koga, T. Nagano, K. Moto, K. Yamamoto, and T. Sadoh

    14th International WorkShop on New Group IV Semiconductor Nanoelectronics  2023.12 

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    Event date: 2023.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tohoku Univ.   Country:Japan  

  • Epitaxial SiGe/Si Multi-Stacks for Complementary FET Devices Invited International conference

    R. Loo, A. Akula, C. Porret, D. Wang, K. Yamamoto, T. Sipőcz, Á. Kerekes, A. Merkulov, M. Ayyad, H. Han, O. Richard, A. Impagnatiello, A. Hikavyy, Y. Shimura

    14th International WorkShop on New Group IV Semiconductor Nanoelectronics  2023.12 

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    Event date: 2023.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tohoku Univ.   Country:Japan  

  • Observation of acceptor-type defect levels using low-temperature Hall effect measurement for GeSn layers fabricated by molecular beam epitaxy Invited International conference

    A. Honda, N. Shimizu, Y. J. Feng, K. Yamamoto, S. Shibayama, O. Nakatsuka, and D. Wang

    14th International WorkShop on New Group IV Semiconductor Nanoelectronics  2023.12 

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    Event date: 2023.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tohoku Univ.   Country:Japan  

  • Optical Material Properties of Epitaxial SiGe/Si Multi-Layers Used for Complementary FET Devices International conference

    R. Loo, A. Hikavyy, D. Wang, K. Yamamoto, T. Sipőcz, Á. Kerekes, A. Akula, and Y. Shimura

    2023 International Conference on Solid State Device and Materials (SSDM 2023)  2023.9 

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    Event date: 2023.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya Congress Center   Country:Japan  

  • High Carrier Mobility of Sn-Doped Ge Thin-Films (<20 nm) by Thinning Combined with Post-Annealing International conference

    T. Koga, T. Nagano, K. Moto, K. Yamamoto, Taizoh Sadoh

    2023 International Conference on Solid State Device and Materials (SSDM 2023)  2023.9 

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    Event date: 2023.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya Congress Center   Country:Japan  

  • N-type characteristics of undoped Ge#D0.967RSn#D0.033 fabricated on bulk n-Ge International conference

    N. Shimizu, Y. Wang, A. Honda, K. Yamamoto, S. Zhang, S. Shibayama, O. Nakatsuka, and D. Wang

    International Conference on Silicon Epitaxy and Heterostructures and International SiGe Technology and Device Meeting 2023 (ISTDM-ICSI 2023)  2023.5 

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    Event date: 2023.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Como   Country:Italy  

  • Polycrystalline Thin-Film Transistor Based on Solid-Phase Crystallized Ge and GeSn Invited International conference

    K. Moto, K. Yamamoto, and K. Toko

    13th International WorkShop on New Group IV Semiconductor Nanoelectronics  2023.1 

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    Event date: 2023.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tohoku Univ.   Country:Japan  

  • N-type characteristics of undoped GeSn in the low Sn concentration region Invited International conference

    N. Shimizu, Y. Wang, A. Honda, K. Yamamoto, S. Zhang, S. Shibayama, O. Nakatsuka, and D. Wang

    13th International WorkShop on New Group IV Semiconductor Nanoelectronics  2023.1 

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    Event date: 2023.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tohoku Univ.   Country:Japan  

  • Transferable High-k/Boron Nitride Gate Dielectric for Two-Dimensional Field-Effect Transistors International conference

    Eui Young Jung, Pablo Solís-Fernández, Keisuke Yamamoto, Hiroki Ago

    2023 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY  2023.10 

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    Event date: 2022.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:金沢市   Country:Japan  

  • 電子・光デバイス応用に向けたPt/GeSn接合のショットキー特性調査

    清水 昇、王 一、山本 圭介、張 師宇、柴山 茂久、中塚 理、王 冬

    2022年第83回応用物理学会秋季学術講演会  2022.9 

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    Event date: 2022.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東北大学   Country:Japan  

  • Electrical characteristics of metal/GeSn contacts in lateral Schottky diodes International conference

    N. Shimizu, Y. Wang, K. Yamamoto, S. Zhang, S. Shibayama, O. Nakatsuka, D. Wang

    The 5th International Union of Materials Research Societies International Conference of Young Researchers on Advanced Materials (IUMRS-ICYRAM 2022)  2022.8 

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    Event date: 2022.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hospital Campus, Kyushu Univ.   Country:Japan  

  • DLTS法によるGeゲートスタック中のトラップ解析 Invited

    中島 寛、Wei-Chen Wen、山本 圭介、王 冬

    第26回 電子デバイス界面テクノロジー研究会  2021.1 

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    Event date: 2021.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:オンライン   Country:Japan  

  • Underlayer Selection to Improve the Performance of Polycrystalline Ge Thin Film Transistors International conference

    Toshifumi Imajo, Kenta Moto, Keisuke Yamamoto, Takashi Suemasu, Hiroshi Nakashima, Kaoru Toko

    PRiME 2020  2020.10 

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    Event date: 2020.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Online   Country:Other  

  • Border-Trap Evaluation for SiO2/GeO2/Ge Gate Stacks Using Deep-Level Transient Spectroscopy International conference

    Hiroshi Nakashima, Wei-Chen Wen, Keisuke Yamamoto, Dong Wang

    8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII)  2019.11 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tohoku Univ.   Country:Japan  

  • Border-Trap Characterization for Ge Gate Stacks Using Deep-Level Transient Spectroscopy Invited International conference

    Hiroshi Nakashima, Wei-Chen Wen, Keisuke Yamamoto, Dong Wang

    236th ECS meeting  2019.10 

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    Event date: 2019.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Atlanta, GA   Country:United States  

  • 固相成長Ge薄膜のTFT動作実証とSn添加効果の検討

    茂藤 健太、山本 圭介、今城 利文、末益 崇、中島 寛、都甲 薫

    第80回応用物理学会秋季学術講演会  2019.9 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  • Evaluation of Border Traps in Al2O3/GeOX/p-Ge Stacks Using Deep-Level Transient Spectroscopy

    W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima

    第80回応用物理学会秋季学術講演会  2019.9 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学   Country:Japan  

  • Electrical properties of p-channel thin-film transistors fabricated on high-mobility polycrystalline Ge on glass International conference

    Kenta Moto, Keisuke Yamamoto, Takashi Suemasu, Hiroshi Nakashima, Kaoru Toko

    2019 International Conference on Solid State Device and Materials (SSDM 2019)  2019.9 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya Univ.   Country:Japan  

  • Border Trap Evaluation for Al2O3/GeOX/p-Ge Gate Stacks using Deep-Level Transient Spectroscopy International conference

    Wei-Chen Wen, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima

    2nd Joint ISTDM / ICSI 2019 Conference 10th International SiGe Technology and Device Meeting (ISTDM) 12th International Conference on Silicon Epitaxy and Heterostructures  2019.6 

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    Event date: 2019.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Madison, Wisconsin   Country:United States  

  • 金融起層交換成長法で作製したGe薄膜を用いた薄膜トランジスタ特性

    東 英実、笠原 健司、山本 圭介、工藤 康平、山田 晋也、金島 岳、中島 寛、浜屋 宏平

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学大岡山キャンパス   Country:Japan  

  • Border trap evaluation using deep-level transient spectroscopy for SiO2/GeO2/Ge gate stacks International conference

    Wei-Chen Wen, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima

    12th International WorkShop on New Group IV Semiconductor Nanoelectronics  2018.12 

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    Event date: 2018.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tohoku Univ.   Country:Japan  

  • GOI基板を用いた非対称ー金属/Ge/金属構造光素子の作製・特性評価

    後藤 太希、前蔵 貴行、仲江 航平、山本 圭介、中島 寛、王 冬、Miao Zhang、Zhongying Xue、Zenfeng Di

    第79回応用物理学会秋季学術講演会  2018.9 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場   Country:Japan  

  • Improvement of Interface Properties of Ge-MISFET with Crystalline La2O3 high-k/Ge(111) Gate Stacks by Wet Treatments International conference

    T. Kanashima, H. Furusho, K. Takeyama, H. Nohira, K. Yamamoto, H. Nakashima

    2018 International Conference on Solid State Device and Materials (SSDM 2018)  2018.9 

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    Event date: 2018.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-Insulator substrate International conference

    T. Maekura, T. Goto, K. Nakae, K. Yamamoto, H. Nakashima, D. Wang

    2018 International Conference on Solid State Device and Materials (SSDM 2018)  2018.9 

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    Event date: 2018.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  • Evaluation of border-traps in GeO2/Ge gate stacks grown by thermal oxidation and plasma oxidation

    Wei-Chen Wen, Taisei Sakaguchi, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima

    第65回応用物理学会春季学術講演会  2018.3 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学西早稲田キャンパス   Country:Japan  

  • 溶液処理による結晶Lu-doped La2O3/La2O3/Ge(111)MIS界面特性改善

    古荘 仁久, 高山 恭一, 山本 圭介, 中島 寛, 野平 博司, 金島 岳

    第65回応用物理学会春季学術講演会  2018.3 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学西早稲田キャンパス   Country:Japan  

  • Near-interface border-traps characterization by deep-level transient spectroscopy for GeO2/Ge gate stacks Invited International conference

    Hiroshi Nakashima, Wei-Chen Wen, Keisuke Yamamoto, Dong Wang

    11th International Workshop on New Group IV Semiconductor Nanoelectronics  2018.2 

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    Event date: 2018.2

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Tohoku University   Country:Japan  

  • Achievement of Ultralow Contact Resistivity of Metal/n+-Ge Contacts with Zr-N-Ge Amorphous Interlayer Invited International conference

    Hiroshi Nakashima, Hayato Okamoto, Keisuke Yamamoto, Dong Wang

    232nd ECS meeting  2017.10 

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    Event date: 2017.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:National Habor, MD   Country:United States  

  • Dependence of Channel Mobility on Substrate Impurity Concentration for Metal Source/Drain Ge MOSFETs International conference

    Taisei Sakaguchi, Kentaro Akiyama, Keisuke Yamamoto, Hiroshi Nakashima, Dong Wang

    2017 International Conference on Solid State Device and Materials (SSDM 2017)  2017.9 

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    Event date: 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sendai International Center, Sendai, Miyagi   Country:Japan  

    Other Link: http://www.ssdm.jp/

  • Characterization of near-interface border-traps in GeO2/Ge gate stacks grown by low and high temperature thermal oxidation using deep-level transient spectroscopy International conference

    Wei-Chen Wen, Taisei Sakaguchi, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima

    2017 International Conference on Solid State Device and Materials (SSDM 2017)  2017.9 

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    Event date: 2017.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sendai International Center, Sendai, Miyagi   Country:Japan  

    Other Link: http://www.ssdm.jp/

  • メタルS/D型 Ge n-MOSFET のチャネル移動度の基板濃度依存性

    坂口 大成, 秋山 健太郎, 山本 圭介, 王 冬, 中島 寛

    第78回応用物理学会秋季学術講演会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡市・福岡国際会議場   Country:Japan  

  • Near-interface border traps characterization for GeO2/Ge gate stacks grown by low and high temperature thermal oxidation by using deep-level transient spectroscopy

    Wei-Chen Wen, Taisei Sakaguchi, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima

    第78回応用物理学会秋季学術講演会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡市・福岡国際会議場   Country:Japan  

  • トンネルFET応用に向けた二次元半導体によるヘテロ構造体の合成

    泉本 征憲, Adha Sukuma Aji, 河原 憲治, 山本 圭介, 中島 寛, 吾郷 浩樹

    第78回応用物理学会秋季学術講演会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡市・福岡国際会議場   Country:Japan  

  • Near-interface border-traps characterization by deep-level transient spectroscopy for GeO2/Ge gate stacks International conference

    Wei-Chen Wen, Taisei Sakaguchi, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima

    The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10)  2017.5 

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    Event date: 2017.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Warwick, Coventry, UK   Country:United Kingdom  

    Other Link: https://www2.warwick.ac.uk/fac/cross_fac/icsi-10

  • Effect of n-type doping level on direct band gap light emission intensity for asymmetric metal/Ge/metal diodes International conference

    Takayuki Maekura, Chisato Motoyama, Kentaro Tanaka, Keisuke Yamamoto, Hiroshi Nakashima, Dong Wang

    The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10)  2017.5 

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    Event date: 2017.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Warwick, Coventry, UK   Country:United Kingdom  

    Other Link: https://www2.warwick.ac.uk/fac/cross_fac/icsi-10

  • [講演奨励賞受賞記念講演] ゲートスタック中へのAl 導入によるGe p-MOSFET の移動度向上機構

    永冨 雄太, 建山 知輝, 坂口 大成, 山本 圭介, 王 冬, 中島 寛

    第64回応用物理学会春季学術講演会  2017.3 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜市・パシフィコ横浜   Country:Japan  

  • La2O3/Ge(111)MIS構造に対するLu-doped La2O3キャップ層の効果

    銭高 真人, 古荘 仁久, 山本 圭介, 中島 寛, 浜屋 宏平, 金島 岳

    第64回応用物理学会春季学術講演会  2017.3 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜市・パシフィコ横浜   Country:Japan  

  • Sbドーピング基板を用いた非対称-金属/Ge/金属構造光素子の作製・特性評価

    前蔵 貴行, 本山 千里, 田中 健太郎, 山本 圭介, 中島 寛, 王 冬

    第64回応用物理学会春季学術講演会  2017.3 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜市・パシフィコ横浜   Country:Japan  

  • Effect of n-type doping level on direct band gap light emission intensity for asymmetric metal/Ge/metal diodes International conference

    Takayuki Maekura, Chisato Motoyama, Kentaro Tanaka, Keisuke Yamamoto, Hiroshi Nakashima, DONG WANG

    10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"  2017.2 

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    Event date: 2017.2

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Tohoku University   Country:Japan  

  • Electrical Properties of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer Invited International conference

    Hiroshi Nakashima, Hayato Okamoto, Keisuke Yamamoto, Dong Wang

    JSPS Core-to Core Program "Atomically Controlled Processsing for Ultralarge Scale Integration"  2016.11 

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    Event date: 2016.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Juelich, Germay   Country:Germany  

  • Al/SiO2/GeO2/Geゲートスタックに於ける界面ダイポールの生成と消失

    永冨 雄太, 建山 知輝, 坂口 大成, 山本 圭介, 王 冬, 中島 寛

    第77回応用物理学会秋季学術講演会  2016.9 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟県・朱鷺メッセ   Country:Japan  

  • Effect of Post Annealing on Hole Mobility of Pseudo-Single-Crystalline Germanium Thin-Film-Transistors on Glass Substrates International conference

    Kenji Kasahara, Hidenori Higashi, Mario Nakano, Yuta Nagatomi, Keisuke Yamamoto, Hiroshi Nakashima, Kohei Hamaya

    7th International Symposium on Control of Semiconductor Interfaces / International SiGe Technology and Device Meeting  2016.6 

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    Event date: 2016.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya University   Country:Japan  

    Other Link: http://istdm2014.org/index.html

  • Mobility enhancement in Ge p-MOSFET due to introduction of Al atoms in SiO2/GeO2 gate stacks International conference

    Yuta Nagatomi, Tomoki Tateyama, Shintaro Tanaka, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima

    7th International Symposium on Control of Semiconductor Interfaces / International SiGe Technology and Device Meeting  2016.6 

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    Event date: 2016.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya University   Country:Japan  

    Other Link: http://istdm2014.org/index.html

  • Improvement of C-V Characteristics in LaYO3/La2O3/Ge(111) MIS Structures International conference

    Takeshi Kanashima, Masato Zenitaka, Keisuke Yamamoto, Riku Yamashiro, Hiroshi Nohira, Hiroshi Nakashima, Shinya Yamada, Kohei Hamaya

    7th International Symposium on Control of Semiconductor Interfaces / International SiGe Technology and Device Meeting  2016.6 

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    Event date: 2016.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya University   Country:Japan  

    Other Link: http://istdm2014.org/index.html

  • ゲートスタック中へのAl導入によるGe p-MOSFETの正孔移動度向上

    永冨 雄太, 田中 慎太郎, 建山 知輝, 山本 圭介, 王 冬, 中島 寛

    第63回応用物理学会春季学術講演会  2016.3 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学大岡山キャンパス   Country:Japan  

  • メタルS/D型Ge n-MOSFETの寄生抵抗低減

    建山 知輝, 永冨 雄太, 田中 慎太郎, 山本 圭介, 王 冬, 中島 寛

    第63回応用物理学会春季学術講演会  2016.3 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学大岡山キャンパス   Country:Japan  

  • La2xA2(1-x)O3(A=Lu, Y)/La2O3/Ge(111) MIS構造におけるC-V特性の改善

    金島 岳, 銭高 真人, 山本 圭介, 山城 陸, 只野 純平, 野平 博司, 中島 寛, 山田 晋也, 浜屋 宏平

    第63回応用物理学会春季学術講演会  2016.3 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京工業大学大岡山キャンパス   Country:Japan  

  • Influences of metal/Ge contact and surface passivation on direct band gap light emission and detection for asymmetric metal/Ge/metal diodes International conference

    Takayuki Maekura, Chisato Motoyama, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima

    9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"  2016.1 

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    Event date: 2016.1

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Tohoku University   Country:Japan  

  • Mechanism of mobility enhancement in Ge p-MOSFET due to introduction of Al atoms in SiO2/GeO2 gate stacks International conference

    Yuta Nagatomi, Shintaro Tanaka, Tomoki Tateyama, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima

    9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"  2016.1 

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    Event date: 2016.1

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Tohoku University   Country:Japan  

  • Influences of Metal/Ge Contact and Surface Passivation on Light Emission and Detection for Asymmetric Metal/Ge/Metal Diodes International conference

    Takayuki Maekura, Dong Wang, Keisuke YAMAMOTO, Hiroshi Nakashima

    2015 International Conference on Solid State Device and Materials (SSDM 2015)  2015.9 

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    Event date: 2015.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sapporo Convention Center, Hokkaido   Country:Japan  

  • PtGe-Source/Drain Ge p-MOSFET with High On/Off Ratio and Low Parasitic Resistance International conference

    Shintaro Tanaka, Yuta Nagatomi, Yuichi Nagaoka, Keisuke YAMAMOTO, Dong Wang, Hiroshi Nakashima

    2015 International Conference on Solid State Device and Materials (SSDM 2015)  2015.9 

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    Event date: 2015.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sapporo Convention Center, Hokkaido   Country:Japan  

  • 低い正孔障壁を有するPtGe/Geコンタクトの作製とメタルS/D型Ge p-MOSFETへの適用

    永冨 雄太, 田中 慎太郎, 長岡 裕一, 山本 圭介, 王 冬, 中島 寛

    電子情報通信学会 シリコン材料・デバイス研究会 (応用物理学会、シリコンテクノロジー分科会との合同開催)  2015.6 

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    Event date: 2015.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学 ベンチャー・ビジネス・ラボラトリー   Country:Japan  

  • Direct-bandgap Light Emission and Detection at Room Temperature in Bulk-Ge Diodes with HfGe/Ge/TiN Structure International conference

    Dong Wang, Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima

    9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9)  2015.5 

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    Event date: 2015.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Universite de Montreal, Canada   Country:Canada  

    Other Link: http://www.icsi-epi.com/

  • Contact Formation for Metal Source/Drain Ge-CMOS Invited International conference

    Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang, Masatoshi Mitsuhara, Ryutaro Noguchi, Keisuke Hiidome, Minoru Nishida

    9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9)  2015.5 

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    Event date: 2015.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Universite de Montreal, Canada   Country:Canada  

    Other Link: http://www.icsi-epi.com/

  • ALDとECRプラズマ酸化による酸化膜固定電荷密度の制御

    永冨 雄太, 長岡 裕一, 田中 慎太郎, 山本 圭介, 王 冬, 中島 寛

    第62回応用物理学会春季学術講演会  2015.3 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学湘南キャンパス   Country:Japan  

  • 300℃以下プロセスで作製した結晶性GeチャネルTFT

    笠原 健司, 永冨 雄太, 山本 圭介, 東 英実, 中野 茉莉央, 山田 晋也, 金島 岳, 中島 寛, 浜屋 宏平

    第62回応用物理学会春季学術講演会  2015.3 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学湘南キャンパス   Country:Japan  

  • 非対称-金属/Ge/金属構造を有する光素子の試作と特性評価

    前蔵 貴行, 山本 圭介, 王 冬, 中島 寛

    第62回応用物理学会春季学術講演会  2015.3 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学湘南キャンパス   Country:Japan  

  • n-ウェルの形成のためのGe基板上へのSb拡散

    米田 亮太, 山本 圭介, 中島 寛

    第62回応用物理学会春季学術講演会  2015.3 

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    Event date: 2015.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東海大学湘南キャンパス   Country:Japan  

  • Effect of Al post metallization annealing on Al2O3/GeOx/Ge gate stacks International conference

    Nagatomi Yuta, Nagaoka Yuichi, Tanaka Shintaro, Keisuke Yamamoto, WANG DONG, Nakashima Hiroshi

    8th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"  2014.1 

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    Event date: 2015.1

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Tohoku University   Country:Japan  

  • Contact properties of group IV metal-nitrides (TiN, ZrN, HfN) on Ge Invited International conference

    Nakashima Hiroshi, Keisuke Yamamoto, WANG DONG, Mitsuhara Masatoshi, Noguchi Ryutaro, Hiidome Keisuke, Minoru Nishida

    JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration"  2014.11 

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    Event date: 2014.11

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:IMEC, Leuven   Country:Belgium  

  • Investigation of Al-PMA Effect on Al2O3/GeOX/Ge Gate Stack International conference

    Yuta Nagatomi, Yuichi Nagaoka, Yamamoto Keisuke, DONG WANG, Hiroshi Nakashima

    226th ECS Meeting  2014.10 

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    Event date: 2014.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Cancun   Country:Mexico  

    Other Link: https://ecs.confex.com/ecs/226/webprogram/Paper41134.html

  • ZrN, HfN/Geコンタクトの電気特性と界面微細構造解析

    野口 竜太郎, 光原 昌寿, 山本 圭介, 西田 稔, 中島 寛, 原 徹

    第75回応用物理学会秋季学術講演会  2014.9 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学札幌キャンパス   Country:Japan  

  • n形3C-SiCへのゲートスタックの低温形成

    山本 裕介, 村山 亮介, 山本 圭介, 王 冬, 中島 寛, 菱木 繁臣, 川村 啓介

    第75回応用物理学会秋季学術講演会  2014.9 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学札幌キャンパス   Country:Japan  

  • ALDにより形成したAl2O3/Geゲートスタックに於けるKr/O2ECRプラズマ酸化効果

    長岡 裕一, 永冨 雄太, 山本 圭介, 王 冬, 中島 寛

    第75回応用物理学会秋季学術講演会  2014.9 

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    Event date: 2014.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:北海道大学札幌キャンパス   Country:Japan  

  • Effect of Kr/O2 mixed ECR plasma oxidation on electrical properties of Al2O3/Ge gate stacks fabricated by ALD International conference

    Yuta Nagatomi, Yuichi Nagaoka, Yamamoto Keisuke, DONG WANG, Hiroshi Nakashima

    2014 International Conference on Solid State Device and Materials (SSDM 2014)  2014.9 

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    Event date: 2014.9

    Presentation type:Oral presentation (general)  

    Venue:Tsukuba International Congress Center, Ibaraki   Country:Japan  

  • Al2O3/GeOx/GeゲートスタックにおけるAl-PMA効果の調査

    永冨 雄太, 長岡 裕一, 山本 圭介, 王 冬, 中島 寛

    電子情報通信学会 シリコン材料・デバイス研究会 (応用物理学会、シリコンテクノロジー分科会との合同開催)  2014.6 

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    Event date: 2014.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学 ベンチャー・ビジネス・ラボラトリー   Country:Japan  

  • Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric metal/germanium/metal structure International conference

    DONG WANG, Sho Kamezawa, Yamamoto Keisuke, Hiroshi Nakashima

    7th International Silicon-Germanium Technology and Device Meeting (ISTDM 2014)  2014.6 

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    Event date: 2014.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Swissotel Merchant Court   Country:Singapore  

    Other Link: http://istdm2014.org/index.html

  • 非対称-金属/Ge/金属素子の試作とその発光特性

    亀沢 翔, 花田 尊徳, 山本 圭介, 王 冬, 中島 寛

    第61回応用物理学会春季学術講演会  2014.3 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス   Country:Japan  

  • Al2O3/Ge形成後のプラズマ酸化によるゲートスタックの低温形成

    永冨 雄太, 長岡 裕一, 山本 圭介, 王 冬, 中島 寛

    第61回応用物理学会春季学術講演会  2014.3 

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    Event date: 2014.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:青山学院大学相模原キャンパス   Country:Japan  

  • Fabrication of MOS and Light Emitting Devices Using Contacts with Low Electron and Hole Barrier Heights Invited International conference

    Nakashima Hiroshi, Keisuke Yamamoto, WANG DONG

    7th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"  2014.1 

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    Event date: 2014.1

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Tohoku University   Country:Japan  

  • 次世代CMOS実現に向けた金属/半導体コンタクトの障壁制御

    山本 圭介, 王 冬, 中島 寛

    第5回半導体材料・デバイスフォーラム  2013.11 

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    Event date: 2013.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:ネストホテル熊本   Country:Japan  

  • Development of Metal Source/Drain Ge-CMOS Using TiN/Ge and HfGe/Ge contacts Invited International conference

    Hiroshi Nakashima, Yamamoto Keisuke, DONG WANG

    224th ECS Meeting  2013.10 

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    Event date: 2013.10 - 2013.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:San Francisco, CA   Country:United States  

    Other Link: https://ecs.confex.com/ecs/224/webprogram/Paper26111.html

  • Low temperature fabrication of Ohmic contact for p-type 4H-SiC using Al/Ti/Sn International conference

    Hatayama Kota, Yamamoto Keisuke, DONG WANG, Hiroshi Nakashima

    6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI) 2013  2013.6 

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    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka   Country:Japan  

  • An accurate characterization of metal-insulator-semiconductor interface-state by deep-level transient spectroscopy and its application on Y2O3/Ge gate stacks with ultrathin GeOx interlayer International conference

    DONG WANG, Nagatomi Yuta, Kojima Shuta, Kamezawa Sho, Yamamoto Keisuke, Hiroshi Nakashima

    8th International Conference on Silicon Epitaxy and Heterostructures(ICSI-8) 2013  2013.6 

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    Event date: 2013.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka   Country:Japan  

  • 極薄GeOX界面層を有するY2O3/Ge ゲートスタックの低温形成

    永冨 雄太, 小島 秀太, 亀沢 翔, 山本 圭介, 王 冬, 中島 寛

    第60回応用物理学会春季学術講演会  2013.3 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  • Al/Ti/Snを用いたp形4H-SiCへのオーミックコンタクトの低温形成

    畑山 紘太, 山本 圭介, 王 冬, 中島 寛

    第60回応用物理学会春季学術講演会  2013.3 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  • Ge-MOSキャパシタの正確な界面準位密度評価:一定温度DLTS

    中島 寛, 王 冬, 山本 圭介

    第60回応用物理学会春季学術講演会  2013.3 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  • HfGeメタル・ソース/ドレインGe p-MOSFETの高移動度化

    佐田 隆宏, 山本 圭介, 王 冬, 中島 寛

    第60回応用物理学会春季学術講演会  2013.3 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  • Contact Formations for Schottky Source/Drain Ge-CMOS Invited International conference

    Nakashima Hiroshi, Keisuke Yamamoto, WANG DONG

    6th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"  2013.2 

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    Event date: 2013.2

    Language:English   Presentation type:Symposium, workshop panel (public)  

    Venue:Tohoku University   Country:Japan  

  • Gate Stack and Source/Drain Junction Formations for High-Mobility Ge MOSFETs Invited International conference

    H. Nakashima, K. Yamamoto, H. Yang, D. Wang

    PRiME 2012 Joint international meeting: 222nd Meeting of ECS — The Electrochemical Society & 2012 Fall Meeting of The Electrochemical Society of Japan  2012.10 

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    Event date: 2012.10

    Presentation type:Oral presentation (general)  

    Venue:Hawaii Convention Center   Country:United States  

  • High Hole-Mobility Ge p-MOSFET with HfGe Schottky Source/Drain International conference

    T. Sada, K. Yamamoto, H. Yang, D. Wang, H. Nakashima

    2012 International Conference on Solid State Device and Materials (SSDM 2012)  2012.9 

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    Event date: 2012.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto International Conference Center, Kyoto   Country:Japan  

  • Fabrication of TiN/Si Contact with Low Electron Barrier Height and Electrical Characterization of Si-On-Insulator Using Back-Gate MOSFET International conference

    K. Asakawa, K. Yamamoto, D. Wang, H. Nakashima

    2012 International Conference on Solid State Device and Materials (SSDM 2012)  2012.9 

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    Event date: 2012.9

    Presentation type:Oral presentation (general)  

    Venue:Kyoto International Conference Center, Kyoto   Country:Japan  

  • Fabrication of ZrSiO/Ge Gate Stacks with GeO2 and ZrGeO Interlayers International conference

    S. Kojima, K. Sakamoto, Y. Iwamura, K. Hirayama, K. Yamamoto, D. Wang, H. Nakashima

    2012 International Conference on Solid State Device and Materials (SSDM 2012)  2012.9 

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    Event date: 2012.9

    Presentation type:Oral presentation (general)  

    Venue:Kyoto International Conference Center, Kyoto   Country:Japan  

  • 低電子障壁TiN/Siコンタクトの形成とback-gate MOSFETへの応用

    朝川 幸二朗, 山本 圭介, 王 冬, 中島 寛

    第73回応用物理学会学術講演会  2012.9 

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    Event date: 2012.9

    Presentation type:Oral presentation (general)  

    Venue:愛媛大学・松山大学   Country:Japan  

  • STEMを利用したTiN/Geコンタクト界面の微細構造解析

    光原 昌寿, 吹留 佳祐, 西田 稔, 山本 圭介, 中島 寛

    第73回応用物理学会学術講演会  2012.9 

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    Event date: 2012.9

    Presentation type:Oral presentation (general)  

    Venue:愛媛大学・松山大学   Country:Japan  

  • 1.0 nm EOTを有するhigh-k/Ge ゲートスタックの形成

    小島 秀太, 坂本 敬太, 山本 圭介, 王 冬, 中島 寛

    第59回応用物理学関係連合講演会  2012.3 

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    Event date: 2012.3

    Presentation type:Oral presentation (general)  

    Venue:早稲田大学   Country:Japan  

  • Effective Passivation of Interface Dipole in TiN-Gate Ge-MOS Capacitor with Ultrathin SiO2/GeO2 Bilayer by Nitrogen Incorporation International conference

    K. Sakamoto, Y. Iwamura, K. Yamamoto, H. Yang, D. Wang, H. Nakashima

    2011 International Conference on Solid State Device and Materials (SSDM 2011)  2011.9 

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    Event date: 2011.9

    Presentation type:Oral presentation (general)  

    Venue:WINC AICHI, Nagoya   Country:Japan  

  • High-Electron-Mobility Ge n-MOSFET with TiN Metal Gate International conference

    T. Yamanaka, K. Yamamoto, K. Sakamoto, H. Yang, D. Wang, H. Nakashima

    2011 International Conference on Solid State Device and Materials (SSDM 2011)  2011.9 

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    Event date: 2011.9

    Presentation type:Oral presentation (general)  

    Venue:WINC AICHI, Nagoya   Country:Japan  

  • SiN膜堆積によるSi基板への局所歪み導入

    原田 健司, 山本 圭介, 王 冬, 中島 寛

    第72回応用物理学会学術講演会  2011.9 

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    Event date: 2011.8 - 2011.9

    Presentation type:Oral presentation (general)  

    Venue:山形大学   Country:Japan  

  • TiN/SiO2/GeO2/Geゲートスタックを有するGe n-MOSFETの電気的特性

    山中 武, 山本 圭介, 上野 隆二, 坂本 敬太, 楊 海貴, 王 冬, 中島 寛

    第72回応用物理学会学術講演会  2011.9 

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    Event date: 2011.8 - 2011.9

    Presentation type:Oral presentation (general)  

    Venue:山形大学   Country:Japan  

  • TiNゲートGe-MOSキャパシタのPMAによる窒素導入効果

    坂本 敬太, 岩村 義明, 山本 圭介, 楊 海貴, 王 冬, 中島 寛

    第72回応用物理学会学術講演会  2011.9 

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    Event date: 2011.8 - 2011.9

    Presentation type:Oral presentation (general)  

    Venue:山形大学   Country:Japan  

  • Photoluminescence observation of defects for uniaxially Strained Si-on-insulator International conference

    D. Wang, K. Yamamoto, H. Gao, H. Yang, H. Nakashima

    7th International Conference on Si Epitaxy and Heterostructures (ICSI7)  2011.8 

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    Event date: 2011.8 - 2011.9

    Presentation type:Oral presentation (general)  

    Venue:Leuven   Country:Belgium  

  • Alleviation of Fermi-level pinning at metal/Ge interface by direct deposition of TiN on Ge surface International conference

    M. Iyota, K. Yamamoto, D. Wang, H. Yang, H. Nakashima

    7th International Conference on Si Epitaxy and Heterostructures (ICSI7)  2011.8 

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    Event date: 2011.8 - 2011.9

    Presentation type:Oral presentation (general)  

    Venue:Leuven   Country:Belgium  

  • High-quality gate-stack formation on Ge and defect termination at the interface Invited International conference

    H. Nakashima, K. Hirayama, K. Yamamoto, H. Yang, D. Wang

    E-MRS ICAM IUMRS 2011 Spring Meeting  2011.5 

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    Event date: 2011.5

    Presentation type:Oral presentation (general)  

    Venue:Congress Center, Nice   Country:France  

  • Ge-MOS キャパシタに於けるTiN メタルゲート形成後の熱処理効果

    岩村 義明, 坂本 敬太, 平山 佳奈, 山本 圭介, 楊 海貴, 王 冬, 中島 寛

    第58回応用物理学関係連合講演会  2011.3 

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    Event date: 2011.3

    Presentation type:Oral presentation (general)  

    Venue:神奈川工科大学   Country:Japan  

  • Defect evaluation by photoluminescence for uniaxially strained Si and strained Si-on-insulator International conference

    D. Wang, K. Yamamoto, H. Gao, H. Yang, H. Nakashima

    China Semiconductor Technology International Conference (CSTIC) 2011  2011.3 

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    Event date: 2011.3

    Presentation type:Oral presentation (general)  

    Venue:Kerry Hotel Pudong, Shanghai   Country:China  

  • Ge on insulator 構造を用いた横型SiGeスピン伝導素子の作製

    大木 健司, 菊岡 柊也, 吉川 修, 鍬釣 一, 森本 敦己, 山本 圭介, 宇佐見, 服部 梓, 澤野 憲太郎, 浜屋 宏平

    2024年第85回応用物理学会秋季学術講演会  2024.9 

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Professional Memberships

  • The Japan Society of Applied Physics

  • The Electrochemical Society

Academic Activities

  • Screening of academic papers

    Role(s): Peer review

    2024

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    Type:Peer review 

    Number of peer-reviewed articles in foreign language journals:7

    Proceedings of International Conference Number of peer-reviewed papers:50

  • 座長 International contribution

    2023 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES (IWDTF2023)  ( Kanazawa Japan ) 2023.10

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    Type:Competition, symposium, etc. 

    Number of participants:116

  • 座長(Chairmanship)

    2023年第84回応用物理学会秋季学術講演会  ( Japan ) 2023.9

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    Type:Competition, symposium, etc. 

  • 座長 International contribution

    2023 International Conference on Solid State Device and Materials (SSDM 2023)  ( Nagoya Japan ) 2023.9

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    Type:Competition, symposium, etc. 

  • 論文委員 International contribution

    2023 International Conference on Solid State Device and Materials (SSDM 2023)  ( Nagoya Japan ) 2023.9

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    Type:Competition, symposium, etc. 

  • Screening of academic papers

    Role(s): Peer review

    2023

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    Type:Peer review 

    Number of peer-reviewed articles in foreign language journals:5

    Proceedings of International Conference Number of peer-reviewed papers:50

  • Japanese Journal of Applied Physics, IWDTF2023特集号 International contribution

    2022.12 - 2024.7

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    Type:Academic society, research group, etc. 

  • 座長(Chairmanship)

    2022年度応用物理学会九州支部学術講演会  ( Japan ) 2022.11

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    Type:Competition, symposium, etc. 

  • 座長 International contribution

    2022 International Conference on Solid State Device and Materials (SSDM 2022)  ( Chiba Japan ) 2022.9

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    Type:Competition, symposium, etc. 

  • 論文委員 International contribution

    2022 International Conference on Solid State Device and Materials (SSDM 2022)  ( Chiba Japan ) 2022.9

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    Type:Competition, symposium, etc. 

  • 座長(Chairmanship)

    2022年第83回応用物理学会秋季学術講演会  ( Japan ) 2022.9

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    Type:Competition, symposium, etc. 

  • Screening of academic papers

    Role(s): Peer review

    2022

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    Type:Peer review 

    Number of peer-reviewed articles in foreign language journals:3

    Proceedings of International Conference Number of peer-reviewed papers:42

  • 座長(Chairmanship)

    2021年度応用物理学会九州支部学術講演会  ( Japan ) 2021.12

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    Type:Competition, symposium, etc. 

  • 座長(Chairmanship)

    2021年第82回応用物理学会秋季学術講演会  ( Japan ) 2021.9

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  • 論文委員 International contribution

    2021 International Conference on Solid State Device and Materials (SSDM 2021)  ( Online Japan ) 2021.9

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    Type:Competition, symposium, etc. 

  • 座長(moderator) International contribution

    239th ECS Meeting  ( Online UnitedStatesofAmerica ) 2021.5 - 2021.6

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    Type:Competition, symposium, etc. 

  • Japanese Journal of Applied Physics, SSDM2021特集号 International contribution

    2021.1 - 2021.12

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    Type:Academic society, research group, etc. 

  • Screening of academic papers

    Role(s): Peer review

    2021

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    Type:Peer review 

    Number of peer-reviewed articles in foreign language journals:3

    Proceedings of International Conference Number of peer-reviewed papers:37

  • 座長(Chairmanship) International contribution

    2020 International Conference on Solid State Device and Materials (SSDM 2020)  ( online Japan ) 2020.9

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    Type:Competition, symposium, etc. 

  • 論文委員 International contribution

    2020 International Conference on Solid State Device and Materials (SSDM 2020)  ( Online Japan ) 2020.9

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    Type:Competition, symposium, etc. 

  • Japanese Journal of Applied Physics, SSDM2020特集号 International contribution

    2020.1 - 2020.12

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    Type:Academic society, research group, etc. 

  • Screening of academic papers

    Role(s): Peer review

    2020

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    Type:Peer review 

    Number of peer-reviewed articles in foreign language journals:4

    Proceedings of International Conference Number of peer-reviewed papers:31

  • 座長(Chairmanship) International contribution

    2019 International Conference on Solid State Device and Materials (SSDM 2019)  ( Nagoya University, Nagoya Japan ) 2019.9

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    Type:Competition, symposium, etc. 

  • 論文委員 International contribution

    2019 International Conference on Solid State Device and Materials (SSDM 2019)  ( Nagoya University, Japan Japan ) 2019.9

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    Type:Competition, symposium, etc. 

  • Japanese Journal of Applied Physics, SSDM2019特集号 International contribution

    2019.1 - 2019.12

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  • Screening of academic papers

    Role(s): Peer review

    2019

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    Type:Peer review 

    Number of peer-reviewed articles in foreign language journals:7

    Proceedings of International Conference Number of peer-reviewed papers:58

  • 座長(Chairmanship)

    平成30年度応用物理学会九州支部学術講演会  ( Japan ) 2018.12

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  • 座長(Chairmanship)

    2018年第79回応用物理学会秋季学術講演会  ( Japan ) 2018.9

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  • 座長(Chairmanship) International contribution

    2018 International Conference on Solid State Device and Materials (SSDM 2018)  ( The University of Tokyo, Tokyo Japan ) 2018.9

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  • 論文委員 International contribution

    2018 International Conference on Solid State Device and Materials (SSDM 2018)  ( The University of Tokyo, Japan Japan ) 2018.9

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    Type:Competition, symposium, etc. 

  • Screening of academic papers

    Role(s): Peer review

    2018

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    Type:Peer review 

    Number of peer-reviewed articles in foreign language journals:3

    Proceedings of International Conference Number of peer-reviewed papers:91

  • 座長(Chairmanship)

    平成29年度応用物理学会九州支部学術講演会  ( Japan ) 2017.12

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  • 座長(Chairmanship) International contribution

    2017 International Conference on Solid State Device and Materials (SSDM 2017)  ( Sendai International Center, Sendai, Miyagi Japan ) 2017.9

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  • 論文委員 International contribution

    2017 International Conference on Solid State Device and Materials (SSDM 2017)  ( Sendai International Center, Sendai, Miyagi Japan ) 2017.9

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  • Screening of academic papers

    Role(s): Peer review

    2017

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    Type:Peer review 

    Number of peer-reviewed articles in foreign language journals:2

    Proceedings of International Conference Number of peer-reviewed papers:31

  • 座長(Chairmanship)

    平成28年度応用物理学会九州支部学術講演会  ( Japan ) 2016.12

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  • 座長(Chairmanship) International contribution

    2016 International Conference on Solid State Device and Materials (SSDM 2016)  ( Tsukuba International Congress Center, Ibaraki Japan ) 2016.9

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  • 論文委員 International contribution

    2016 International Conference on Solid State Device and Materials (SSDM 2016)  ( Tsukuba International Congress Center, Tsukuba Japan ) 2016.9

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  • Screening of academic papers

    Role(s): Peer review

    2016

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    Type:Peer review 

    Number of peer-reviewed articles in foreign language journals:5

    Proceedings of International Conference Number of peer-reviewed papers:38

  • 座長(Chairmanship)

    平成27年度応用物理学会九州支部学術講演会  ( Japan ) 2015.12

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Research Projects

  • シリコンゲルマニウム光スピントロニクスの開拓

    Grant number:24H00034  2024 - 2028

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (S)

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    Authorship:Coinvestigator(s)  Grant type:Scientific research funding

  • 中空ゲルマニウム構造に基づく高性能電子・光デバイス集積化技術の開発

    Grant number:24K07576  2024 - 2026

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (C)

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    Authorship:Principal investigator  Grant type:Scientific research funding

  • Ge-On-Insulator基板を利用したMIS型近赤外発光素子の研究開発

    Grant number:23K03927  2023 - 2025

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (C)

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    Authorship:Coinvestigator(s)  Grant type:Scientific research funding

  • 中空Ge基板を用いた高品質Ge-on-Insulator作製プロセスの新規開発(A new fabrication scheme for Ge on Insulator with improved material properties)

    2022 - 2023

    JSPS二国間交流事業・共同研究(ベルギー(FWO)との共同研究)

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    Authorship:Principal investigator  Grant type:Contract research

  • Si・Ge混合プラットフォーム上への異種機能混載集積回路の実現

    2021 - 2023

    令和3-5年度東北大学電気通信研究所共同プロジェクト研究

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    Authorship:Principal investigator  Grant type:Contract research

  • A new fabrication scheme for Ge on Insulator (NEW GOI)

    2020.1 - 2021.12

    Joint research

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    Authorship:Principal investigator  Grant type:Other funds from industry-academia collaboration

  • 低消費電力フレキシブルCMOSの創製

    2020 - 2025

    NEDO・未踏チャレンジ2050

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    Authorship:Coinvestigator(s)  Grant type:Contract research

  • ゲルマニウムスピンMOSFETの実証

    Grant number:19H05616  2019 - 2023

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (S)

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    Authorship:Coinvestigator(s)  Grant type:Scientific research funding

  • Ge-on-Insulator基板上のSteep SlopeトンネルFETの実現

    Grant number:19K15028  2019 - 2020

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Early-Career Scientists

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    Authorship:Principal investigator  Grant type:Scientific research funding

  • 卓越研究員制教員(総合理工学研究院)の海外派遣

    2019 - 2020

    2019 年度 Progress 100 (世界トップレベル研究者招へいプログラム)・若手研究者グローバルリーダー育成型

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    Authorship:Principal investigator  Grant type:On-campus funds, funds, etc.

  • 材料界面の複合顕微解析―結晶構造と電磁気特性の多元定量解析技術の開発と応用―

    Grant number:18KK0134  2018 - 2020

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Fostering Joint International Research (B)

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    Authorship:Coinvestigator(s)  Grant type:Scientific research funding

  • 電子・光デバイス応用に向けたIV族半導体の高品質ヘテロエピタキシー

    2018

    九州大学QRプログラム・わかばチャレンジ

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    Authorship:Principal investigator  Grant type:On-campus funds, funds, etc.

  • 超低消費電力GeトンネルFET実現に向けた基盤研究

    2015

    九州大学教育研究プログラム・研究拠点形成プロジェクト(P&P)

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    Authorship:Principal investigator  Grant type:On-campus funds, funds, etc.

  • MOS界面の電荷補償による高移動度Ge MOSFETの実現

    Grant number:25886010  2013 - 2014

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Research Activity start-up

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    Authorship:Principal investigator  Grant type:Scientific research funding

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Educational Activities

  • 2013年1月~2016年10月まで、グリーンアジア国際教育センターの助教として、「文部科学省 博士課程教育リーディングプログラム グリーンアジア国際戦略プログラム」の運営推進・コース学生指導を担当した。

    2016年11月からは総合理工学研究院に異動し、「先端半導体の材料・プロセス・デバイス技術の開発」を中心に研究および総合理工学府大学院生・工学部融合基礎工学科学部生の指導を行なっている。

Class subject

  • 半導体・デバイス工学A

    2024.4 - 2024.6   Spring quarter

  • Semiconductor Physics / 半導体物性

    2024.4 - 2024.6   Spring quarter

  • Semiconductor Physics / 半導体物性

    2023.4 - 2023.6   Spring quarter

  • 研究指導演習(II)

    2022.10 - 2023.3   Second semester

  • 研究指導演習(I)

    2021.10 - 2022.3   Second semester

  • 研究指導演習(II)

    2021.10 - 2022.3   Second semester

  • Doctoral Research (II)

    2021.4 - 2022.3   Full year

  • 研究指導演習(I)

    2020.10 - 2021.3   Second semester

  • 研究指導演習(II)

    2020.10 - 2021.3   Second semester

  • 国際演習A1,A2,A3,A4

    2020.4 - 2021.3   Full year

  • Doctoral Research (II)

    2020.4 - 2021.3   Full year

  • 研究指導演習(I)

    2019.10 - 2020.3   Second semester

  • Fundamental Research (III)

    2019.4 - 2020.3   Full year

  • Doctoral Research (II)

    2019.4 - 2020.3   Full year

  • Fundamental Research (I)

    2019.4 - 2020.3   Full year

  • Fundamental Research (II)

    2019.4 - 2020.3   Full year

  • Doctoral Research (I)

    2017.4 - 2017.9   First semester

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Participation in international educational events, etc.

  • 2013.11

    九州大学グリーンアジア国際リーダー教育センター・九州大学総合理工学研究院

    グリーンアジア国際セミナー・総理工セミナー

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    Venue:春日市

  • 2013.1

    九州大学グリーンアジア国際リーダー教育センター

    グリーンアジア国際セミナー

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    Venue:福岡市

Teaching Student Awards

  • 2024 International Conference on Solid State devices and Materials(SSDM2024) Young Researcher Award

    Year and month of award:2024.9

    Classification of award-winning students:Doctoral student   Name of award-winning student:Linyu HUANG

Other educational activity and Special note

  • 2022  Special Affairs  融合基礎工学科・高専連携プログラムインターンシップ生受け入れ(4名)

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    融合基礎工学科・高専連携プログラムインターンシップ生受け入れ(4名)

Social Activities

  • 九州大学 総理工セミナー 総理工若手研究者ポスターセッション「高性能ULSIのためのゲルマニウムMOSデバイスの開発」

    九州大学総合理工学府  第一ホテル東京  2012.12

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    Audience:General, Scientific, Company, Civic organization, Governmental agency

    Type:Seminar, workshop

Travel Abroad

  • 2019.10 - 2019.12

    Staying countory name 1:Belgium   Staying institution name 1:imec