Interface trap and border trap characterization for Al2O3/GeOx/Ge gate stacks and influence of these traps on mobility of Ge p-MOSFET Reviewed International journal

Wei-Chen Wen, Yuta Nagatomi, Hiroshi Akamine, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima

AIP Advances   10   065119-1 - 065119-7   2020.6

Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-Insulator substrate Reviewed International journal

T. Maekura, T. Goto, K. Nakae, K. Yamamoto, H. Nakashima, and D. Wang

JAPANESE JOURNAL OF APPLIED PHYSICS   58 ( B )   SBBE05-1 - SBBE05-6   2019.4

Border trap evaluation for SiO2/GeO2/Ge gate stacks using deep-level transient spectroscopy Reviewed International journal

W.-C. Wen, K. Yamamoto, D. Wang, and H. Nakashima

Journal of Applied Physics   124 ( 20 )   205303-1 - 205303-11   2018.11

Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-Insulator substrate Reviewed International journal

T. Maekura, T. Goto, K. Nakae, K. Yamamoto, H. Nakashima, D. Wang

543 - 544   2018.9

Effect of n-type doping level on direct band gap electroluminescence intensity for asymmetric metal/Ge/metal diodes Reviewed International journal

T. Maekura, K. Tanaka, C. Motoyama, R. Yoneda, K. Yamamoto, H. Nakashima, and DONG WANG

Semiconductor Science and Technology   32 ( 10 )   104001-1 - 104001-6   2017.10

Effects of metal/Ge contact and surface passivation on direct band gap light emission and detection for asymmetric metal/Ge/metal diodes Reviewed International journal

Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima, DONG WANG

JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 4S )   04EH08-1 - 04EH08-6   2016.4

Direct band gap light emission and detection at room temperature in bulk germanium diodes with HfGe/Ge/TiN structure Reviewed International journal

DONG WANG, Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima

THIN SOLID FILMS   602   43 - 47   2016.3

Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric fin type metal/germanium/metal structure Reviewed International journal

DONG WANG, Takayuki Maekura, Sho Kamezawa, Keisuke Yamamoto, Hiroshi Nakashima

APPLIED PHYSICS LETTERS   106 ( 7 )   071102-1 - 071102-4   2015.2

Low-temperature fabrication of Y2O3/Ge gate stacks with ultrathin GeOx interlayer and low interface states density characterized by a reliable deep-level transient spectroscopy method Reviewed International journal

DONG WANG, Yuta Nagatomi, Shuta Kojima, Yamamoto Keisuke, Hiroshi Nakashima

Thin Solid Films   557   288 - 291   2014.4

An accurate characterization of interface-state by deep-level transient spectroscopy for Ge metal-insulator-semiconductor capacitors with SiO2/GeO2 bilayer passivation Reviewed International journal

DONG WANG, Shuta Kojima, Keita Sakamoto, Keisuke Yamamoto, Hiroshi Nakashima

Journal of Applied Physics   112 ( 8 )   083707-1 - 083707-5   2012.10

Defect Evaluation by Photoluminescence for Uniaxially Strained Si-On-Insulator Reviewed International journal

DONG WANG, Keisuke Yamamoto, Hongye Gao, Haigui Yang, Hiroshi Nakashima

Journal of The Electrochemical Society   158 ( 12 )   H1221 - H1224   2011.12

Defect Evaluation by Photoluminescence for Uniaxially Strained Si-On-Insulator Reviewed International journal

DONG WANG, Keisuke Yamamoto, Hongye Gao, Haigui Yang, Hiroshi Nakashima

The Electrochemical Society Transactions   34 ( 1 )   1117 - 1122   2011.1

Defect characterization and control for SiGe-on-insulator (Invited) Invited Reviewed International journal

DONG WANG, Haigui Yang, Hiroshi Nakashima

1525 - 1528   2010.11

325 nm-laser-excited micro-photoluminescence for strained Si films Reviewed International journal

DONG WANG, Haigui Yang, Tokuhide Kitamura, Hiroshi Nakashima

THIN SOLID FILMS   518 ( 9 )   2470 - 2473   2010.2

Influence of freely diffusing excitons on the photoluminescence spectrum of Si thick films with depth distribution of strain Reviewed International journal

DONG WANG, Haigui Yang, Tokuhide Kitamura, Hiroshi Nakashima

Journal of Applied Physics   107 ( 3 )   033511-1 - 033511-5   2010.2

Optical and electrical evaluations of SiGe layers on insulator fabricated using Ge condensation by dry oxidation Reviewed International journal

DONG WANG, Hiroshi Nakashima

Solid-State Electronics   53 ( 8 )   841 - 849   2009.8

Local strain evaluation of single crystal Si pillar by micro Raman spectroscopy and photoluminescence Reviewed International journal

THIN SOLID FILMS   517 ( 1 )   31 - 33   2008.11

Local strain evaluation for freestanding Si membranes by microphotoluminescence using UV laser excitation Reviewed International journal

DONG WANG, Haigui Yang, Jun Morioka, Tokuhide Kitamura, Hiroshi Nakashima

684 - 687   2008.10

Microphotoluminescence evaluation of local strain for freestanding Si membranes with SiN deposition Reviewed International journal

DONG WANG, Hiroshi Nakashima, Jun Morioka, Tokuhide Kitamura

APPLIED PHYSICS LETTERS   91 ( 24 )   241918-1 - 241918-3   2007.12

Photoluminescence and TEM evaluations of defects generated during SiGe-on-insulator virtual substrate fabrication: Temperature ramping process Reviewed International journal

DONG WANG, Seiichiro Ii, Ken-ichi Ikeda, Hideharu Nakashima, Koji Matsumoto, Masahiko Nakamae, Hiroshi Nakashima

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   253 ( 1-2 )   31 - 36   2006.12

Photoluminescence Evaluation of Defects Generated during Temperature Ramp-up Process of SiGe-On-Inslator Virtual Substrate Fabrication Reviewed International journal

DONG WANG, Seiichiro Ii, Ken-ichi Ikeda, Hideharu Nakashima, Hiroshi Nakashima

2193 - 2195   2006.10

Photoluminescence evaluation of defects generated during SiGe-on-insulator virtual substrate fabrication: Temperature ramping process Reviewed International journal

DONG WANG, Seiichiro Ii, Hiroshi Nakashima, Ken-ichi Ikeda, Hideharu Nakashima, Koji Matsumoto, Masahiko Nakamae

APPLIED PHYSICS LETTERS   89 ( 4 )   041916-1 - 041916-3   2006.7

Structural and electrical evaluation for strained Si/SiGe on insulator Reviewed International journal

DONG WANG, Seiichiro Ii, Ken-ichi Ikeda, Hideharu Nakashima, Masaharu Ninomiya, Masahiko Nakamae, Hiroshi Nakashima

THIN SOLID FILMS   508 ( 1-2 )   107 - 111   2006.6

Photoluminescence characterization of strained Si-SiGe-on-insulator wafers Reviewed International journal

DONG WANG, Koji Matsumoto, Masahiko Nakamae, Hiroshi Nakashima

JAPANESE JOURNAL OF APPLIED PHYSICS   45 ( 4B )   3012 - 3016   2006.4

Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurements Reviewed International journal

DONG WANG, Asami Ueda, Hideki Takada, Hiroshi Nakashima

PHYSICA B-CONDENSED MATTER   376-377   411 - 415   2006.4

Photoluminescence characterization of strained Si-SiGe-on-insulator wafers with different Ge fractions Reviewed International journal

DONG WANG, Hiroshi Nakashima, Koji Matsumoto, Masahiko Nakamae

APPLIED PHYSICS LETTERS   87 ( 25 )   251928-1 - 251928-3   2005.12

Evaluation of interface states density and minority carrier generation lifetime for strained Si/SiGe wafers using transient capacitance method Reviewed International journal

DONG WANG, Masaharu Ninomiya, Masahiko Nakamae, Hiroshi Nakashima

JAPANESE JOURNAL OF APPLIED PHYSICS   44 ( 4B )   2390 - 2394   2005.4

Electrical characterization of strained Si/SiGe wafers using transient capacitance measurements Reviewed International journal

DONG WANG, Masaharu Ninomiya, Masahiko Nakamae, Hiroshi Nakashima

APPLIED PHYSICS LETTERS   86 ( 12 )   122111-1 - 122111-3   2005.3

Evaluation of Interface States and Minority Carrier Generation Lifetime for Strained Si/SiGe Wafers Using Transient Capacitance Method Reviewed International journal

DONG WANG, Masaharu Ninomiya, Masahiko Nakamae, Hiroshi Nakashima

2148 - 2150   2004.10

Control of two-photon absorption by using electromagnetic field in sodium and rubidium vapors Reviewed International journal

DONG WANG, Jin-Yue Gao, Ji-Hua Xu, Giuseppe C. La Rocca, F. Bassani

Proceedings of the Society of Photographic Instrumentation Engineers   4458   278 - 283   2001.11

Electromagnetically induced two-photon transparency in rubidium atoms Reviewed International journal

DONG WANG, Jin-Yue Gao, Ji-Hua Xu, Giuseppe C. La Rocca, F. Bassani

EUROPHYSICS LETTERS   54 ( 4 )   456 - 460   2001.5

Electromagnetically induced two-photon transparency in a four level system of rubidium atom Reviewed International journal

DONG WANG, Jin-Yue Gao, Ji-Hua Xu, Giuseppe C. La Rocca, F. Bassani

Proceedings of the Society of Photographic Instrumentation Engineers   4397   140 - 145   2001.4

Low Temperature (210 °C) Fabrication of Ge MOS Capacitor and Controllability of Its Flatband Voltage Reviewed International journal

178 ( 1 )   108427-1 - 108427-6   2024.4

Low-temperature process design for inversion mode n-channel thin-film-transistor on polycrystalline Ge formed by solid-phase crystallization Reviewed International journal

L. Huang, K. Moto, K. Igura, T. Ishiyama, K. Toko, D. Wang, and K. Yamamoto

JAPANESE JOURNAL OF APPLIED PHYSICS   63 ( 2 )   02SP42-1 - 02SP42-5   2024.2

Inversion Mode n-channel TFT on Polycrystalline Ge Formed by Solid-Phase Crystallization Reviewed International journal

L. Huang, K. Moto, T. Ishiyama, K. Toko, D. Wang, and K. Yamamoto

Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials (SSDM2023)   249 - 250   2023.9

Fabrication and Characterization of Germanium n-MOS and n-MOSFET with Thermally Oxidized Yttrium Gate Insulator: Formation of underlying Germanium Oxide and Its Electrical Characteristics Reviewed International journal

W.-C. Wen, D. Wang, H. Nakashima, K. Yamamoto

Materials Science in Semiconductor Processing   162   107504-1 - 107504-6   2023.8

High channel mobility of 3C-SiC n-MOSFETs with gate stacks formed at low temperature - the importance of Coulomb scattering suppression Reviewed International journal

K. Yamamoto, D. Wang, H. Nakashima, S. Hishiki, H. Uratani, Y. Sakaida, K. Kawamura

Applied Physics Express   15 ( 7 )   071008-1 - 071008-6   2022.6

Low-Temperature Fabrication of Ge MOS Capacitor with Wet Oxidized Yttrium Interlayer Reviewed International journal

K. Yamamoto, K. Iseri, D. Wang, H. Nakashima

Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials (SSDM2021)   75 - 76   2021.9

Schottky Barrier Height Control at Metal/Ge Interface by Insertion of Nitrogen Contained Amorphous Layer Invited Reviewed International journal

K. Yamamoto, D. Wang, H. Nakashima

ECS transactions   102 ( 4 )   63 - 71   2021.5

Thermally Oxidized Yttrium and Scandium Gate Dielectrics on Germanium with High Interfacial and Film Qualities Reviewed International journal

H. Kanakogi, W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima

Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials (SSDM2020)   33 - 34   2020.9

High interfacial quality metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC with Al2O3 interlayer and its internal charge analysis Reviewed International journal

R. Oka, K. Yamamoto, H. Akamine, D. Wang, H. Nakashima, S. Hishiki, K. Kawamura

JAPANESE JOURNAL OF APPLIED PHYSICS   59 ( SG )   SGGD17-1 - SGGD17-10   2020.2

Conduction Type Control of Ge-on-Insulator: Combination of Smart-CutTM and Defect Elimination Reviewed International journal

K. Yamamoto, K. Nakae, H. Akamine, D. Wang, H. Nakashima, Md. M Alam, K. Sawano, Z. Xue, M. Zhang, Z. Di

ECS transactions   93 ( 1 )   73 - 77   2019.10

Border-Trap Characterization for Ge Gate Stacks Using Deep-Level Transient Spectroscopy Invited Reviewed International journal

H. Nakashima, W.-C. Wen, K. Yamamoto, D. Wang

ECS transactions   92 ( 4 )   3 - 10   2019.10

Low temperature (<300oC) Fabrication of Ge MOS Structure for Advanced Electronic Devices Reviewed International journal

K. Iseri, W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima

2019.9

Low temperature (<300oC) Fabrication of Ge MOS Structure for Advanced Electronic Devices Reviewed International journal

K. Iseri, W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima

315 - 316   2019.9

Demonstration of n-MOSFET operation and charge analysis of SiO2/Al2O3 gate dielectric on (111) oriented 3C-SiC Reviewed International journal

R. Oka, K. Yamamoto, D. Wang, H. Nakashima, S. Hishiki, K. Kawamura

2019.9

Ge field-effect transistor with asymmetric metal source/drain fabricated on Ge-on-Insulator: Schottky tunneling source mode operation and conventional mode operation Reviewed International journal

K. Yamamoto, K. Nakae, D. Wang, H. Nakasima, Z. Xue, M. Zhang, and Z. Di

JAPANESE JOURNAL OF APPLIED PHYSICS   58 ( B )   SBBA14-1 - SBBA14-7   2019.4

Wide range control of Schottky barrier heights at metal/Ge interfaces with nitrogen-contained amorphous interlayers formed during ZrN sputter deposition Reviewed International journal

K. Yamamoto, R. Noguchi, M. Mitsuhara, M. Nishida, T. Hara, D. Wang, and H. Nakashima

Semiconductor Science and Technology   33 ( 11 )   114011-1 - 114011-7   2018.11

Ambipolar operation of asymmetric Ge Schottky tunneling source field-effect transistor fabricated on Ge-on-Insulator Reviewed International journal

K. Yamamoto, K. Nakae, D. Wang, H. Nakashima, Z. Xue, M. Zhang, Z. Di

847 - 848   2018.9

Impact of Al2O3 interlayer for metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC for electronic device application Reviewed International journal

K. Yamamoto, D. Wang, H. Nakashima, S. Hishiki, K. Kawamura

315 - 316   2018.9

Electrical properties of epitaxial Lu- or Y-doped La2O3/ La2O3/Ge high-k gate-stacks Invited Reviewed International journal

T. Kanashima, R. Yamashiro, M. Zenitaka, Keisuke Yamamoto, DONG WANG, J. Tadano, S. Yamada, H. Nohira, Hiroshi Nakashima, K. Hamaya

Materials Science in Semiconductor Processing   70   260 - 264   2017.11

Fabrication of asymmetric Ge Schottky tunneling source n-channel field-effect transistor and its characterization of tunneling conduction Invited Reviewed International journal

Keisuke Yamamoto, Hayato Okamoto, DONG WANG, Hiroshi Nakashima

Materials Science in Semiconductor Processing   70   283 - 287   2017.11

Achievement of Ultralow Contact Resistivity of Metal/n+-Ge Contacts with Zr-N-Ge Amorphous Interlayer Invited Reviewed International journal

H. Nakashima, H. Okamoto, K. Yamamoto, and DONG WANG

ECS Transactions   80 ( 4 )   97 - 106   2017.10

Dependence of Channel Mobility on Substrate Impurity Concentration for Metal Source/Drain Ge MOSFETs Reviewed International journal

T. Sakaguchi, K. Akiyama, K. Yamamoto, DONG WANG, and H. Nakashima

Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials (SSDM2017)   529 - 530   2017.9

Characterization of near-interface border-traps in GeO2/Ge gate stacks grown by low and high temperature thermal oxidation using deep-level transient spectroscopy Reviewed International journal

W. -C. Wen, T. Sakaguchi, K. Yamamoto, DONG WANG, and H. Nakashima

Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials (SSDM2017)   505 - 506   2017.9

Achievement of low parasitic resistance in Ge n-channel metal-oxide-semiconductor field-effect transistor using an embedded TiN-source/drain structure Invited Reviewed International journal

Y. Nagatomi, T. Tateyama, S. Tanaka, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima

SEMICONDUCTOR SCIENCE AND TECHNOLOGY   32 ( 3 )   035001-1 - 035001-8   2017.3

Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer Reviewed International journal

Hayato Okamoto, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima

Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials (SSDM2016)   642 - 643   2016.9

Electrical properties of pseudo-single-crystalline germanium thin-film-transistor fabricated on glass substrates Reviewed International journal

K. Kasahara, Yuta Nagatomi, Keisuke Yamamoto, H. Higashi, M. Nakano, S. Yamada, DONG WANG, Hiroshi Nakashima, K. Hamaya

APPLIED PHYSICS LETTERS   107 ( 14 )   142102-1 - 142102-5   2015.10

Electrical Properties of Group 4 Metal-Nitride/Ge Contacts and the Application to Ge Optoelectronic Devices Invited Reviewed International journal

Hiroshi Nakashima, Keisuke Yamamoto, DONG WANG

The Electrochemical Society Transactions   69 ( 10 )   55 - 66   2015.10

PtGe-Source/Drain Ge p-MOSFET with High On/Off Ratio and Low Parasitic Resistance Reviewed International journal

Shintaro Tanaka, Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima

Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM2015)   28 - 29   2015.9

Electrical and structural properties of group-4 transition-metal nitride (TiN, ZrN, and HfN) contacts on Ge Reviewed International journal

Keisuke Yamamoto, Ryutaro Noguchi, Masatoshi Mitsuhara, M. Nishida, Toru Hara, DONG WANG, Hiroshi Nakashima

Journal of Applied Physics   118 ( 11 )   115701-1 - 115701-12   2015.9

Influences of Metal/Ge Contact and Surface Passivation on Light Emission and Detection for Asymmetric Metal/Ge/Metal Diodes Reviewed International journal

Takayuki Maekura, DONG WANG, Keisuke Yamamoto, Hiroshi Nakashima

Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM2015)   606 - 607   2015.9

Fabrication of PtGe/Ge contacts with high on/off ratio and its application to metal source/drain Ge p-channel MOSFETs Reviewed International journal

Yuta Nagatomi, Shintaro Tanaka, Yuichi Nagaoka, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima

JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 7 )   070306-1 - 070306-4   2015.7

Investigation of Al-PMA Effect on Al2O3/GeOX/Ge Gate Stack Reviewed International journal

Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima

The Electrochemical Society Transactions   64 ( 6 )   261 - 266   2014.10

Effect of Kr/O2ECR Plasma Oxidation on Electrical Properties of Al2O3/Ge Gate Stacked Fabricated by ALD Reviewed International journal

Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima

Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials (SSDM2014)   10 - 11   2014.9

Role of an interlayer at a TiN/Ge contact to alleviate the intrinsic Fermi-level pinning position toward the conduction band edge Reviewed International journal

Keisuke Yamamoto, Masatoshi Mitsuhara, Keisuke Hiidome, Ryutaro Noguchi, Minoru Nishida, DONG WANG, Hiroshi Nakashima

APPLIED PHYSICS LETTERS   104 ( 13 )   132109-1 - 132109-5   2014.4

Development of Metal Source/Drain Ge-CMOS Using TiN/Ge and HfGe/Ge Contacts Invited Reviewed International journal

Hiroshi Nakashima, Yamamoto Keisuke, DONG WANG

The Electrochemical Society Transactions   58 ( 9 )   167 - 178   2013.10

Fabrication of Metal-Nitride/Si Contacts with Low Electron Barrier Height Reviewed International journal

Yamamoto Keisuke, Kojiro Asakawa, DONG WANG, Hiroshi Nakashima

The Electrochemical Society Transactions   58 ( 9 )   53 - 59   2013.10

Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO2/GeO2 gate stack

Keisuke Yamamoto, Takahiro Sada, DONG WANG, Hiroshi Nakashima

APPLIED PHYSICS LETTERS   103 ( 12 )   122106-1 - 122106-4   2013.9

Gate Stack and Source/Drain Junction Formations for High-Mobility Ge MOSFETs Invited Reviewed International journal

Hiroshi Nakashima, Keisuke Yamamoto, Haigui Yang, DONG WANG

The Electrochemical Society Transactions   50 ( 9 )   205 - 216   2013.3

High Hole-Mobility Ge p-MOSFET with HfGe Schottky Source/Drain Reviewed International journal

Takahiro Sada, Keisuke Yamamoto, Haigui Yang, DONG WANG, Hiroshi Nakashima

Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials   737 - 738   2012.9

Fabrication of ZrSiO/Ge Gate Stacks with GeO2 and ZrGeO Interlayers Reviewed International journal

Syuta Kojima, Keita Sakamoto, Yoshiaki Iwamura, Kana Hirayama, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima

Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials   12 - 13   2012.9

Fabrication of TiN/Si Contact with Low Electron Barrier Height and Electrical Characterization of Si-On-Insulator Using Back- Gate MOSFET Reviewed International journal

Kojiro Asakawa, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima

Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials   64 - 65   2012.9

Fabrication of TiN/Ge Contact with Extremely Low Electron Barrier Height Reviewed International journal

Keisuke Yamamoto, Kenji Harada, Haigui Yang, DONG WANG, Hiroshi Nakashima

JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 7 )   070208-1 - 070208-3   2012.7

Schottky Source/Drain Ge Metal-Oxide-Semiconductor Field-Effect Transistors with Directly Contacted TiN/Ge and HfGe/Ge Structures Reviewed International journal

Keisuke Yamamoto, Takeshi Yamanaka, Kenji Harada, Takahiro Sada, Keita Sakamoto, Syuta Kojima, Haigui Yang, DONG WANG, Hiroshi Nakashima

APPLIED PHYSICS EXPRESS   5 ( 5 )   051301-1 - 051301-3   2012.5

Influence of SiGe layer thickness and Ge fraction on compressive strain and hole mobility in a SiGe-on-insulator substrate fabricated by the Ge condensation technique Reviewed International journal

Haigui Yang, DONG WANG, Hiroshi Nakashima

Thin Solid Films   520 ( 8 )   3283 - 3287   2012.2

Source/drain junction fabrication for Ge metal-oxide-semiconductor field-effect transistors Reviewed International journal

Keisuke Yamamoto, Takeshi Yamanaka, Ryuji Ueno, Kana Hirayama, Haigui Yang, DONG WANG, Hiroshi Nakashima

Thin Solid Films   520 ( 8 )   3382 - 3386   2012.2

Significant Improvement of SiO2/4H-SiC Interface Properties by Electron Cyclotron Resonance Nitrogen Plasma Irradiation Reviewed International journal

Haigui Yang, DONG WANG, Hiroshi Nakashima

Journal of The Electrochemical Society   159 ( 1 )   H1 - H4   2012.1

Fabrication of Ge-MOS capacitors with high quality interface by ultra-thin SiO2/GeO2 bi-layer passivation combined with the subsequent SiO2-depositions using magnetron sputtering Reviewed International journal

Kana Hirayama, Keisuke Yoshino, Ryuji Ueno, Yoshiaki Iwamura, Haigui Yang, DONG WANG, Hiroshi Nakashima

SOLID-STATE ELECTRONICS   60 ( 1 )   122 - 127   2011.6

Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al2O3 deposition and subsequent post-annealing Reviewed International journal

Haigui Yang, Masatoshi Iyota, Shogo Ikeura, DONG WANG, Hiroshi Nakashima

Solid State Electronics   60 ( 1 )   128 - 133   2011.6

Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2/GeO2 bilayer passivation Reviewed International journal

Hiroshi Nakashima, Yoshiaki Iwamura, Keita Sakamoto, DONG WANG, Kana Hirayama, Keisuke Yamamoto, Haigui Yang

APPLIED PHYSICS LETTERS   98 ( 25 )   252102-1 - 252102-3   2011.6

Ohmic contact formation on n-type Ge by direct deposition of TiN Reviewed International journal

Masatoshi Iyota, Keisuke Yamamoto, DONG WANG, Haigui Yang, Hiroshi Nakashima

APPLIED PHYSICS LETTERS   98 ( 19 )   192108-1 - 192108-3   2011.5

High-Performance Ge Metal-Oxide-Semiconductor Field-Effect Transistors with a Gate Stack Fabricated by Ultrathin SiO2/GeO2 Bilayer Passivation Reviewed International journal

Keisuke Yamamoto, Ryuji Ueno, Takeshi Yamanaka, Kana Hirayama, Haigui Yang, DONG WANG, Hiroshi Nakashima

APPLIED PHYSICS EXPRESS   4 ( 5 )   051301-1 - 051301-3   2011.5

Fabrication of Ge Metal-Oxide-Semiconductor Capacitors with High-Quality Interface by Ultrathin SiO2/GeO2 Bilayer Passivation and Postmetallization Annealing Effect of Al Reviewed International journal

Kana Hirayama, Ryuji Ueno, Yoshiaki Iwamura, Keisuke Yoshino, DONG WANG, Haigui Yang, Hiroshi Nakashima

JAPANESE JOURNAL OF APPLIED PHYSICS   50 ( 4 )   04DA10-1 - 04DA10-5   2011.4

Effect of Al2O3 Deposition and Subsequent Annealing on Passivation of Defects in Ge-Rich SiGe-on-Insulator Reviewed International journal

Haigui Yang, Masatoshi Iyota, Shogo Ikeura, DONG WANG, Hiroshi Nakashima

Key Engineering Materials   470   79 - 84   2011.2

Measurement of strain and strain relaxation in free-standing Si membranes by convergent beam electron diffraction and finite element method Reviewed International journal

Hongye Gao, Ken-ichi Ikeda, Satoshi Hata, Hideharu Nakashima, DONG WANG, Hiroshi Nakashima

Acta Materialia   59 ( 7 )   2882 - 2890   2011.2

Hole-Mobility Enhancement in Ultrathin Strained Si0.5Ge0.5-on-Insulator Fabricated by Ge Condensation Technique Reviewed International journal

Haigui Yang, DONG WANG, Hiroshi Nakashima

905 - 907   2010.11

Strain distribution in freestanding Si/SixNy membranes studied by transmission electron microscopy Reviewed International journal

Hongye Gao, Ken-ichi Ikeda, Satoshi Hata, Hideharu Nakashima, DONG WANG, Hiroshi Nakashima

THIN SOLID FILMS   518 ( 23 )   6787 - 6791   2010.9

Microstructure and strain distribution in freestanding Si membrane strained by SixNy deposition Reviewed International journal

Hongye Gao, Ken-ichi Ikeda, Satoshi Hata, Hideharu Nakashima, DONG WANG, Hiroshi Nakashima

Materials Science and Engineering A   527 ( 24-25 )   6633 - 6637   2010.9

Measurement of Strain in Freestanding Si/SixNy Membrane by Convergent Beam Electron Diffraction and Finite Element Method Reviewed International journal

Hongye Gao, Ken-ichi Ikeda, Satoshi Hata, Hideharu Nakashima, DONG WANG, Hiroshi Nakashima

JAPANESE JOURNAL OF APPLIED PHYSICS   49 ( 9 )   090208-1 - 090208-3   2010.9

Passivation of Electrically Active Defects in Ge-Rich SiGe-on-Insulator by Al2O3 Deposition and Subsequent Post-Deposition Annealing Reviewed International journal

Haigui Yang, Masatoshi Iyota, Shogo Ikeura, DONG WANG, Hiroshi Nakashima

APPLIED PHYSICS EXPRESS   3 ( 7 )   071302-1 - 071302-3   2010.7

Electrical characterization of high-k gate dielectrics on Ge with HfGeN and GeO2 interlayers Reviewed International journal

Kana Hirayama, Wataru Kira, Keisuke Yoshino, Haigui Yang, DONG WANG, Hiroshi Nakashima

THIN SOLID FILMS   518 ( 9 )   2505 - 2508   2010.2

Defect control by Al deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions Reviewed International journal

Haigui Yang, DONG WANG, Hiroshi Nakashima, Kana Hirayama, Satoshi Kojima, Shogo Ikeura

THIN SOLID FILMS   518 ( 9 )   2342 - 2345   2010.2

Optical and Electrical Characterizations of Defects in SiGe-on-insulator Reviewed International journal

Hiroshi Nakashima, DONG WANG, Haigui Yang

The Electrochemical Society Transactions   25 ( 7 )   99 - 114   2009.10

Evidence for existence of deep acceptor levels in SiGe-on-insulator substrate fabricated using Ge condensation technique Reviewed International journal

Haigui Yang, DONG WANG, Hiroshi Nakashima

APPLIED PHYSICS LETTERS   95 ( 12 )   122103-1 - 122103-3   2009.9

Electrical and structural evaluations of high-k gate dielectrics fabricated using plasma oxidation and the subsequent annealing for a Hf/SiO(2)/Si structure Reviewed International journal

Hiroshi Nakashima, DONG WANG, Youhei Sugimoto, Yuusaku Suehiro, Keisuke Yamamoto, Masanari Kajiwara, Kana Hirayama

SEMICONDUCTOR SCIENCE AND TECHNOLOGY   23 ( 12 )   125020-1 - 125020-6   2008.12

Dependences of effective work functions of TaN on HfO2 and SiO2 on post-metallization anneal Reviewed International journal

Youhei Sugimoto, Masanori Kajiwara, Keisuke Yamamoto, Yuusaku Suehiro, DONG WANG, Hiroshi Nakashima

Thin Solid Films   517 ( 1 )   204 - 206   2008.11

Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/SiO(2)/Si structure Reviewed International journal

Hiroshi Nakashima, Youhei Sugimoto, Yuusaku Suehiro, Keisuke Yamamoto, Masanari Kajiwara, Kana Hirayama, DONG WANG

780 - 783   2008.10

Influence of top surface passivation on bottom-channel hole mobility of ultrathin SiGe- and Ge-on-insulator Reviewed International journal

Haigui Yang, DONG WANG, Hiroshi Nakashima, Hongye Gao, Kana Hirayama, Ken-ichi Ikeda, Satoshi Hata, Hideharu Nakashima

APPLIED PHYSICS LETTERS   93 ( 7 )   072104-1 - 072104-3   2008.8

Mechanism of mobility enhancement in Ge p-channel metal-oxide-semiconductor field-effect transistor due to introduction of Al atoms into SiO2/GeO2 gate stack Invited Reviewed International journal

Yuta Nagatomi, Tomoki Tateyama, Sintaro Tanaka, Wei-Chen Wen, Taisei Sakaguchi, Keisuke Yamamoto, Liwei Zhao, DONG WANG, Hiroshi Nakashima

Materials Science in Semiconductor Processing   70   246 - 253   2007.11

Effective work function modulation of TaN metal gate on HfO2 after postmetallization annealing Reviewed International journal

Youhei Sugimoto, Nasanari Kajiwara, Keisuke Yamamoto, Yuusaku Suehiro, DONG WANG, Hiroshi Nakashima

APPLIED PHYSICS LETTERS   91 ( 11 )   112105-1 - 112105-3   2007.9

Electrical characterization of high-k gate dielectrics fabricated using plasma oxidation and post-deposition annealing of a Hf/SiO2/Si structure Reviewed International journal

Youhei Sugimoto, Hideto Adachi, Keisuke Yamamoto, DONG WANG, Hideharu Nakashima, Hiroshi Nakashima

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   9 ( 6 )   1031 - 1036   2006.12

Fe gettering by p+ layer in bifacial Si solar cell fabrication Reviewed International journal

Takeshi Terakawa, DONG WANG, Hiroshi Nakashima

Physica B   376-377   231 - 235   2006.4

Role of Heavily B-doped Layer on Low-Temperature Fe Gettering in Bifacial Si Solar Cell Fabrication Reviewed International journal

Takeshi Teraoka, DONG WANG, Hiroshi Nakashima

JAPANESE JOURNAL OF APPLIED PHYSICS   45 ( 4A )   2643 - 2647   2006.4

高速LSI用ひずみSiウエハー技術 Reviewed

中前正彦, 王 冬, 浅野 種正, 宮尾 正信

応用物理   74   1217 - 1222   2005.9

Fe Gettering for High-Efficiency Solar Cell Fabrication Reviewed International journal

Takeshi Terakawa, DONG WANG, Hiroshi Nakashima

JAPANESE JOURNAL OF APPLIED PHYSICS   44 ( 6A )   4060 - 4061   2005.6

Structural and electrical properties of Zr oxide film for high-k gate dielectrics by using electron cyclotron resonance plasma sputtering Reviewed International journal

Junli Wang, Liwei Zhao, Nam Hoai Luu, DONG WANG, Hiroshi Nakashima

APPLIED PHYSICS A   80 ( 8 )   1781 - 1787   2005.5

Method for detecting defects in silicon-on-insulator using capacitance transient spectroscopy Reviewed International journal

Hiroshi Nakashima, DONG WANG, Takashi Noguchi, Kousuke Itani, Junli Wang, Liwei Zhao

JAPANESE JOURNAL OF APPLIED PHYSICS   43 ( 5A )   2402 - 2408   2004.5

Low-temperature growth of thin silicon nitride film by electron cyclotron resonance plasma irradiation Reviewed International journal

Liwei Zhao, Nam Hoai Luu, DONG WANG, Youhei Sugimoto, Ken-ichi Ikeda, Hiroshi Nakashima

JAPANESE JOURNAL OF APPLIED PHYSICS   43 ( 1A-B )   L47 - L49   2004.1

Growth kinetics and electrical properties of ultrathin Si oxide film fabricated using Krypton-diluted oxygen plasma excited by electron cyclotron resonance Reviewed International journal

Junli Wang, Liwei Zhao, Nam Hoai Luu, Kazuya Makiyama, DONG WANG, Hiroshi Nakashima

JAPANESE JOURNAL OF APPLIED PHYSICS   42 ( 10 )   6496 - 6501   2003.10

Effect of Ion Mass and Ion Energy on Low-Temperature Deposition of Polycrystalline-Si Thin Film on SiO2 Layer by Using Sputtering-Type Electron Cyclotron Resonance Plasma Reviewed International journal

Junli Wang, Taishi Saitou, Youhei Sugimoto, DONG WANG, Liwei Zhao, Hiroshi Nakashima

JAPANESE JOURNAL OF APPLIED PHYSICS   42 ( 5B )   L511 - L513   2003.3

Electromagnetically induced one-photon and two-photon transparency in rubidium atoms Reviewed International journal

Ji-Hua Xu, Giuseppe C. La Rocca, F. Bassani, DONG WANG, Jin-Yue Gao

OPTICS COMMUNICATIONS   216 ( 1-3 )   157 - 164   2003.2

Electromagnetically induced inhibition of two-photon absorption in sodium vapor Reviewed International journal

Jin-Yue Gao, Su-Hui Yang, DONG WANG, Xiu-Zhen Guo, Kai-Xin Chen, Yun Jiang, Bin Zhao

PHYSICAL REVIEW A   61 ( 2 )   023401-1 - 023401-3   2000.2

N-type characteristics of undoped GeSn in the low Sn concentration region International conference

N. Shimizu, Y. Wang, A. Honda, K. Yamamoto, S. Zhang, S. Shibayama, O. Nakatsuka, and D. Wang

13th International Workshop on New Group IV Semiconductor Nanoelectronics  2023.1 

光・電子デバイス応用に向けたノンドープ GeSnのMOS特性調査

王 一、本田 彬、清水 昇、山本 圭介、柴山 茂久、中塚 理、王 冬

2022年(令和4年度)応用物理学会九州支部学術講演会  2022.11 

ノンドープGeSnエピタキシャル膜のホール効果測定による電気伝導特性評価

本田 彬、王 一、清水 昇、山本 圭介、柴山 茂久、中塚 理、王 冬

2022年(令和4年度)応用物理学会九州支部学術講演会  2022.11 

電子・光デバイス応用に向けたPt/GeSn接合のショットキー特性調査

清水 昇、王 一、山本 圭介、張 師宇、柴山 茂久、中塚 理、王 冬

2022年第83回応用物理学会秋季学術講演会  2022.9 

Electrical characteristics of metal/GeSn contacts in lateral Schottky diodes International conference

N. Shimizu, Y. Wang, K. Yamamoto,S. Zhang, S. Shibayama, O. Nakatsuka, D. Wang

The 5th International Union of Materials Research Societies International Conference of Young Researchers on Advanced Materials (IUMRS-ICYRAM 2022)  2022.8 

電子・光デバイス応用に向けた金属/GeSn接合の低温形成

清水 昇、王 一、山本 圭介、張 師宇、中塚 理、王 冬

2022年第69回応用物理学会春季学術講演会  2022.3 

Credit Transfer and Degree Cooperation in Transnational Talent Training at Asian Universities -- EEST Program International conference

Wang Dong

Future-oriented Transnational Higher Education in Asia  2021.12 

Ge-on-Insulator 基板のフォトルミネッセンス強度に及ぼす膜厚の影響

永松 寛大、山本 圭介、王 冬

第12回半導体材料・デバイスフォーラム  2021.12 

Ge-on-Insulator基板のPL発光強度の膜厚依存性の調査

永松 寛大、山本 圭介、王 冬

2021年度応用物理学会九州支部学術講演会  2021.12 

IMPACT OF FILM THICKNESS ON PHOTOLUMINESCENCE INTENSITY OF SMART-CUT GERMANIUM-ON-INSULATOR SUBSTRATES International conference

Kanta Nagamatsu, Keisuke Yamamoto and Dong Wang

23nd Cross Straits Symposium on Energy and Environmental Science and Technology  2021.12 

Ge-based semiconductor devices for future ULSI --- Development of fundamental fabrication technologies Invited International conference

Dong WANG

Westlake Engineering Colloquium  2021.5 

DLTS法によるGeゲートスタック中のトラップ解析 Invited

中島 寛、Wei-Chen Wen、山本 圭介、王 冬

第26回 電子デバイス界面テクノロジー研究会  2021.1 

INVESTIGATION OF DIRECT BAND GAP LIGHT EMISSION IN MESA ETCHED Pt/Ge/TiN STRUCTURE International conference

Keisuke Sugata,, Kanta Nagamatsu, Keisuke Yamamoto, Dong Wang and Hiroshi Nakashima

22nd Cross Straits Symposium on Energy and Environmental Science and Technology (22nd CSS-EEST)  2020.12 

Border-Trap Characterization for Ge Gate Stacks with Thin GeOX layer Using Deep-Level Transient Spectroscopy Invited International conference

H. Nakashima, W.-C. Wen, K. Yamamoto, D. Wang

PRiME2020  2020.10 

Enhancement of direct band gap electroluminescence in asymmetric metal/Ge/metal diodes Invited International conference

D. Wang, T. Maekura, K. Yamamoto, H. Nakashima

TACT 2019 International Thin Film Conference  2019.11 

Border-Trap Characterization for Ge Gate Stacks Using Deep-Level Transient Spectroscopy Invited International conference

H. Nakashima, W.-C. Wen, K. Yamamoto, D. Wang

236th ECS meeting  2019.10 

GOI基板を用いた非対称ー金属／Ge／金属構造光素子の作製・特性評価

後藤 太希、前蔵 貴行、仲江 航平、山本 圭介、中島 寛、王 冬、Miao Zhang、Zhongying Xue、Zenfeng Di

2018年第79回応用物理学会秋季学術講演会  2018.9 

Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-Insulator substrate International conference

T. Maekura, T. Goto, K. Nakae, K. Yamamoto, H. Nakashima, D. Wang

2018 International Conference on Solid State Devices and Materiaals (SSDM2018)  2018.9 

Direct band gap electroluminescence and photo detection in asymmetric metal/Ge/metal diodes Invited International conference

D. Wang, T. Maekura, K. Yamamoto, H. Nakashima

Collaborative Conference on Materials Research (CCMR) 2018  2018.6 

Near-interface border-traps characterization by deep-level transient spectroscopy for GeO2/Ge gate stacks International conference

W.-C. Wen, T. Sakaguchi, K. Yamamoto, DONG WANG, and H. Nakashima

The 10th International Conference on Silicon Epitaxy and heterostructures  2017.5 

Effect of n-type doping level on direct band gap light emission intensity for asymmetric metal/Ge/metal diodes International conference

T. Maekura, C. Motoyama, K. Tanaka, K. Yamamoto, H. Nakashima, and DONG WANG

The 10th International Conference on Silicon Epitaxy and heterostructures  2017.5 

Sbドーピング基板を用いた非対称-金属/Ge/金属構造光素子の作製・特性評価

前蔵貴行, 本山千里, 田中健太郎, 山本 圭介, 王 冬, 中島 寛

2017年第64回応用物理学会春季学術講演会  2017.3 

Towards an energy-saving society – the shrinking transistors Invited International conference

2017.2 

Effect of n-type doping level on direct band gap light emission intensity for asymmetric metal/Ge/metal diodes International conference

T. Maekura, C. Motoyama, K. Tanaka, Keisuke Yamamoto, Hiroshi Nakashima, DONG WANG

10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar  2017.2 

Direct band gap light emission and detection at room temperature in bulk Ge diodes International conference

DONG WANG

The 2nd Joint Symposium of Kyushu University and Yonsei University  2016.2 

Direct band gap light emission and detection in lateral HfGe/Ge/TiN diodes Invited International conference

DONG WANG, Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima

American Vacuum Society (AVS) Shanghai Thin Film Conference  2015.10 

Direct-bandgap light emission and detection at room temperature in bulk-Ge diodes with HfGe/Ge/TiN structure International conference

DONG WANG, Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima

The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9)  2015.5 

Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric metal/germanium/metal structure International conference

DONG WANG, Sho Kamezawa, Keisuke Yamamoto, Hiroshi Nakashima

7th International Silicon-Germanium Technology and Device Meeting  2014.6 

An accurate characterization of metal-insulator-semiconductor interface-state by deep-level transient spectroscopy and its application on Y2O3/Ge gate stacks with ultrathin GeOx interlayer International conference

DONG WANG, Yuta Nagatomi, Shuta Kojima, Sho Kamezawa, Keisuke Yamamoto, Hiroshi Nakashima

The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)  2013.6 

Defect Evaluation by Photoluminescence for Uniaxially Strained Si-on-insulator International conference

DONG WANG, Keisuke Yamamoto, Hongye Gao, Haigui Yang, Hiroshi Nakashima

China Semiconductor Technology International Conference 2011 (CSTIC2011)  2010.3 

Fabrication of a Ge gate stack using plasma irradiation and low-temperature annealing for Ge applications International conference

H. Kuwazuru, D. Wang, and K. Yamamoto

14th International Workshop on New Group IV Semiconductor Nanoelectronics  2023.12 

Electrical and Structural Characterization of Thermally Oxidized Yttrium Oxide on Germanium Invited International conference

K. Yamamoto, W.-C. Wen, D. Wang, and H. Nakashima

14th International Workshop on New Group IV Semiconductor Nanoelectronics  2023.12 

Inversion Mode n-channel TFT Fabricated on Solid-Phase Crystallized Polycrystalline Ge at Low Temperature Improved by Metal Induced Dopant Activation International conference

L. Huang, K. Moto, K. Igura, T. Ishiyama, K. Toko, D. Wang, and K. Yamamoto

14th International Workshop on New Group IV Semiconductor Nanoelectronics  2023.12 

リセスチャネル構造によるメタルS/D 型Ge n-MOSFET の電流駆動力改善

鍬釣 一、王 冬、山本 圭介

第14回半導体材料・デバイスフォーラム  2023.12 

多結晶 p 型 Ge 上における CMOS プロセスの検討

森本 敦己、茂藤 健太、黄 林昱、居倉 功太、石山 隆光、都甲 薫、王 冬、山本 圭介

2023年(令和5年度)応用物理学会九州支部学術講演会  2023.11 

プレーナチャネル構造による 3C-SiC n-MOSFET の高性能化

西崎 理万、王 冬、山本 圭介、浦谷 泰基、坂井田 佳紀、菱木 繁臣

2023年(令和5年度)応用物理学会九州支部学術講演会  2023.11 

Ge スピン MOSFET に向けたゲートスタックの低温形成とフラットバンド電圧制御

麻生 大聖、鍬釣 一、王 冬、山本 圭介

2023年(令和5年度)応用物理学会九州支部学術講演会  2023.11 

Low Temperature (~210 °C) Fabrication of Ge MOS Capacitor using Plasma Oxidation and Oxi-Nitridation for the Interlayer Formation International conference

2023.10 

Fabrication and Electrical Characterization of Ge-on-Insulator based on Ge-on-Nothing Technology International conference

K. Yamamoto, D. Wang, R. Loo, C. Porret, J. Cho, K. Dessein, V. Depauw

2023 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY (IWDTF2023)  2023.10 

Thermally oxidized Yttrium Oxide on Germanium for n-MOS Capacitor and Field-Effect Transistor Invited International conference

K. Yamamoto, W.-C. Wen, D. Wang, H. Nakashima

244th ECS meeting  2023.10 

Fabrication of Inversion Mode n-channel TFT on Solid-Phase Crystallized Polycrystalline Ge

Linyu huang, Kenta Moto, Takamitsu Ishiyama, Kaoru Toko, Dong Wang, Keisuke Yamamoto

2023.9 

リセスチャネル化によるメタルS/D 型Ge n-MOSFET の電流駆動力向上(III)

鍬釣 一、王 冬、山本 圭介

2023年第84回応用物理学会秋季学術講演会  2023.9 

Inversion Mode n-channel TFT on Polycrystalline Ge Formed by Solid-Phase Crystallization International conference

L. Huang, K. Moto, T. Ishiyama, K. Toko, D. Wang, and K. Yamamoto

2023 International Conference on Solid State Device and Materials (SSDM 2023)  2023.9 

Study on the Performance of Metal S/D Ge n-MOSFET with Recessed Channel Structure International conference

H. Kuwazuru, S. Nasu, D. Wang, and K. Yamamoto

13th International Workshop on New Group IV Semiconductor Nanoelectronics  2023.1 

Ge-on-Insulator from Ge-on-Nothing and Layer Transfer Invited International conference

K. Yamamoto (Invited), D. Wang, R. Loo, C. Porret, J. Cho, K. Dessein, and V. Depauw

13th International Workshop on New Group IV Semiconductor Nanoelectronics  2023.1 

Inversion Mode n-channel TFT on Polycrystalline Ge Formed by Solid-Phase Crystallization International conference

L. Huang, K. Moto, T. Ishiyama, K. Toko, D. Wang, and K. Yamamoto

13th International Workshop on New Group IV Semiconductor Nanoelectronics  2023.1 

Offline Tool Wear Detection Based On Deep Learning For Audio Signals International conference

Ching-hsiang Yang, Dong Wang, Wei-chen Lee, Huan-kai Chau

24th Cross Straits Symposium on Energy and Environmental Science and Technology  2022.12 

ESTABLISHMENT OF A LOW-TEMPERATURE FABRICATION PROCESS FOR SPINTRONICS APPLICATION OF Ge MOSFETs International conference

Shingo Nasu, Dong Wang, Keisuke Yamamoto

24th Cross Straits Symposium on Energy and Environmental Science and Technology  2022.12 

N-type doping into polycrystalline Ge thin-film on glass

L. Huang, K. Moto, T. Ishiyama, K.Toko, D. Wang, K.Yamamoto

2022.11 

メタルS/D型Ge n-MOSFETのリセスチャネル形状と性能に関する研究

鍬釣 一、那須 新悟、王 冬、山本 圭介

2022年(令和4年度)応用物理学会九州支部学術講演会  2022.11 

金属/多結晶Ge界面におけるフェルミレベルピニングの緩和とショットキー障壁制御

高山 智成、茂藤 健太、都甲 薫、王 冬、山本 圭介

2022年第83回応用物理学会秋季学術講演会  2022.9 

リセスチャネル化によるメタルS/D型Ge n-MOSFETの電流駆動力向上(II)

那須 新悟、王 冬、山本 圭介

2022年第83回応用物理学会秋季学術講演会  2022.9 

Fabrication and Characterization of Ge n-MOS and n-MOSFET with Thermally Oxidized Yttrium Gate Insulator International conference

W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima

9th International Symposium on Control of Semiconductor Interfaces (ISCSI-IX)  2022.9 

Novel group IV semiconductor materials and devices for beyond Si technology Invited International conference

The 5th International Union of Materials Research Societies International Conference of Young Researchers on Advanced Materials (IUMRS-ICYRAM 2022)  2022.8 

Fabrication of Ge MOSFET at low temperature (~250 C) for spintronics application International conference

S. Nasu, T. Matsuo, K. Yamamoto, D. Wang

The 5th International Union of Materials Research Societies International Conference of Young Researchers on Advanced Materials (IUMRS-ICYRAM 2022)  2022.8 

高移動度3C-SiC n-MOSFETの作製と高温動作実証

山本 圭介、王 冬、中島 寛、菱木 繁臣、浦谷 泰基、坂井田 佳紀、川村 啓介

2022年第69回応用物理学会春季学術講演会  2022.3 

GeスピンMOSFET実現に向けた低温（～250℃）デバイスプロセスの構築

那須 新悟、松尾 拓朗、山本 圭介、王 冬

2021年度応用物理学会九州支部学術講演会  2021.12 

Achievement of High Channel Mobility of 3C-SiC n-MOSFET with the Gate Stack Formed at Low Temperature International conference

K. Yamamoto, D. Wang, H. Nakashima, S. Hishiki, H. Uratani, Y. Sakaida, K. Kawamura

2021 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY  2021.11 

リセスチャネル化によるメタルS/D型Ge n-MOSFETの電流駆動力向上

松尾 拓朗、山本 圭介、王 冬

2021年第82回応用物理学会秋季学術講演会  2021.9 

GeスピンMOSFETのための低温（～250°C）デバイスプロセスの構築

松尾 拓朗、山本 圭介、王 冬

2021年第82回応用物理学会秋季学術講演会  2021.9 

Low-Temperature Fabrication of Ge MOS Capacitor with Wet Oxidized Yttrium Interlayer International conference

K. Yamamoto, K. Iseri, D. Wang, H. Nakashima

2021 International Conference on Solid State Devices and Materials (SSDM2021)  2021.9 

Schottky Barrier Height Control at Metal/Ge Interface by Insertion of Nitrogen Contained Amorphous Layer Invited International conference

K. Yamamoto, D. Wang, H. Nakashima

239th ECS meeting  2021.5 

エッチバック法を用いたGe-on-Insulator作製に向けたウェットエッチング法の検討

清水 昇、山本 圭介、王 冬、中島 寛

2021年第68回応用物理学会春季学術講演会  2021.3 

FORMATION OF Ge MIRROR PLANE WITH HIGH SPEED WET ETCHING FOR ETCHBACK Ge-ON-INSULATOR FABRICATION International conference

Noboru Shimizu, Keisuke Yamamoto, Dong Wang and Hiroshi Nakashima

22nd Cross Straits Symposium on Energy and Environmental Science and Technology (22nd CSS-EEST)  2020.12 

FABRICATION AND CHARACTERIZATION OF GERMANIUM GATE STACK WITH THERMALLY OXIDIZED YTTRIUM AND SCANDIUM DIELECTRICS International conference

Hiroki Kanakogi, Wei-Chen Wen, Keisuke Yamamoto, Dong Wang and Hiroshi Nakashima

22nd Cross Straits Symposium on Energy and Environmental Science and Technology (22nd CSS-EEST)  2020.12 

Isotropic Wet Etching and Improving Surface Flatness of Ge for Etchback Ge-on-Insulator Fabrication International conference

N. Shimizu, K. Yamamoto, D. Wang, H. Nakashima

PRiME2020  2020.10 

3C-SiC MOSFETの閾値電圧制御に向けたSiO2/Al2O3ゲートスタック中の固定電荷・界面ダイポールの解析

岡 龍誠、山本 圭介、王 冬、中島 寛、菱木 繁臣、川村 啓介

第11回半導体材料・デバイスフォーラム  2019.12 

Study on Position of Border Traps in Al2O3/GeOx/p-Ge Gate Stacks Using Deep-Level Transient Spectroscopy International conference

W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima

8th International Symposium on Control of Semiconductor Interfaces  2019.11 

Thermally Oxidized Yttrium and Scandium Gate Dielectrics on Germanium with High Interfacial and Film Qualities International conference

H. Kanakogi, W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima

2020 International Conference on Solid State Devices and Materiaals (SSDM2020)  2020.9 

SiO2/Al2O3絶縁膜を有する3C-SiC n-MOSキャパシタの固定電荷と界面ダイポール解析

岡 龍誠、山本 圭介、王 冬、中島 寛、菱木 繁臣、川村 啓介

2019年第80回応用物理学会秋季学術講演会  2019.9 

新規電子デバイス応用に向けたGeゲートスタックの低温(<300°C)形成

井芹 健人、温 偉辰、山本 圭介、王 冬、中島 寛

2019年第80回応用物理学会秋季学術講演会  2019.9 

Evaluation of Border Traps in Al2O3/GeOx/p-Ge Stacks Using Deep-Level Transient Spectroscopy

W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima

2019.9 

SiO2/Al2O3絶縁膜を有する3C-SiC n-MOSキャパシタとn-MOSFET動

山本 圭介、岡 龍誠、王 冬、中島 寛、菱木 繁臣、川村 啓介

2019年第80回応用物理学会秋季学術講演会  2019.9 

Demonstration of n-MOSFET operation and charge analysis of SiO2/Al2O3 gate dielectric on (111) oriented 3C-SiC International conference

R. Oka, K. Yamamoto, D. Wang, H. Nakashima, S. Hishiki, K. Kawamura

2019 International Conference on Solid State Devices and Materiaals (SSDM2019)  2019.9 

Low temperature (<300oC) Fabrication of Ge MOS Structure for Advanced Electronic Devices International conference

K. Iseri, W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima

2019 International Conference on Solid State Devices and Materiaals (SSDM2019)  2019.9 

Border Trap Evaluation for Al2O3/GeOX/p-Ge Gate Stacks using Deep-Level Transient Spectroscopy International conference

W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima

2nd Joint ISTDM / ICSI 2019 Conference  2019.6 

Conduction Type Control of Ge-on-Insulator: Combination of Smart-Cut and Defect Elimination International conference

K. Yamamoto, K. Nakae, H. Akamine, D. Wang, H. Nakashima, Md. M. Alam, K. Sawano, Z. Xue, M. Zhang, Z. Di

2nd Joint ISTDM / ICSI 2019 Conference  2019.6 

Border trap evaluation using deep-level transient spectroscopy for SiO2/GeO2/Ge gate stacks International conference

W.-C. Wen, K. Yamamoto, D. Wang, and H. Nakashima

12th International Workshop on New Group IV Semiconductor Nanoelectronics  2018.12 

Fabrication of Ge MOS Capacitor by Metal Yttrium Oxidation Invited International conference

K. Yamamoto, K. Akiyama, K. Iseri, W.-C. Wen, D. Wang, H. Nakashima

12th International Workshop on New Group IV Semiconductor Nanoelectronics  2018.12 

Border trap characterization using deep-level transient spectroscopy for GeO2/Gegate stacks grown by thermal oxidation and plasma oxidation

2018.11 

電子ビーム蒸着によるGe上へのY酸化物系ゲート絶縁膜形成

秋山 健太郎、井芹 健人、温 偉辰、山本 圭介、王 冬、中島 寛

2018年第79回応用物理学会秋季学術講演会  2018.9 

Smart-Cut法を用いて作製したGe-on-Insulatorの極性変化

仲江 航平、薛 飛達、山本 圭介、王 冬、中島 寛、Miao Zhang、Zhongying Xue、Zenfeng Di

2018年第79回応用物理学会秋季学術講演会  2018.9 

Low-temperature fabrication of Ge MOS capacitors for spintronics and flexible electronics application

2018.9 

Impact of Al2O3 interlayer for metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC for electronic device application International conference

K. Yamamoto, D. Wang, H. Nakashima, S. Hishiki, K. Kawamura

2018 International Conference on Solid State Devices and Materiaals (SSDM2018)  2018.9 

Ambipolar operation of asymmetric Ge Schottky tunneling source field-effect transistor fabricated on Ge-on-Insulator International conference

K. Yamamoto, K. Nakae, D. Wang, H. Nakashima, Z. Xue, M. Zhang, Z. Di

2018 International Conference on Solid State Devices and Materiaals (SSDM2018)  2018.9 

遷移金属窒化物を用いた金属/Geコンタクトの障壁制御

山本 圭介、光原 昌寿、王 冬、中島 寛

2018年第65回応用物理学会春季学術講演会  2018.3 

Evaluation of border-traps in GeO2/Ge gate stacks grown by thermal oxidation and plasma oxidation

W.-C. Wen, T. Sakaguchi, K. Yamamoto, DONG WANG and H. Nakashima

2018.3 

Near-interface border-traps characterization by deep-level transient spectroscopy for GeO2/Ge gate stacks International conference

H. Nakashima, W.-C. Wen, K. Yamamoto and DONG WANG

11th International Workshop on New Group IV Semiconductor Nanoelectronics  2018.2 

Achievement of Ultralow Contact Resistivity of Metal/n+-Ge Contacts with Zr-N-Ge Amorphous Interlayer Invited International conference

H. Nakashima, H. Okamoto, K. Yamamoto, and DONG WANG

232nd ECS meeting  2017.10 

Dependence of Channel Mobility on Substrate Impurity Concentration for Metal Source/Drain Ge MOSFETs International conference

T. Sakaguchi, K. Akiyama, K. Yamamoto, DONG WANG, and H. Nakashima

2017 International Conference on Solid State Devices and Materiaals (SSDM2017)  2017.9 

Characterization of near-interface border-traps in GeO2/Ge gate stacks grown by low and high temperature thermal oxidation using deep-level transient spectroscopy International conference

W.-C. Wen, T. Sakaguchi, K. Yamamoto, DONG WANG, and H. Nakashima

2017 International Conference on Solid State Devices and Materiaals (SSDM2017)  2017.9 

非晶質Ge界面層とNによるGeコンタクトの外因性準位とSファクターの変調(Ⅱ)

板屋 航、仲江 航平、山本 圭介、王 冬、中島 寛

2017年第78回応用物理学会秋季学術講演会  2017.9 

Near-interface border traps characterization for GeO2/Ge gate stacks grown by low and high temperature thermal oxidation by using deep-level transient spectroscopy

W.-C. Wen, T. Sakaguchi, K. Yamamoto, DONG WANG, and H. Nakashima

2017.9 

メタルS/D型 Ge n-MOSFET のチャネル移動度の基板濃度依存性

坂口 大成、秋山 健太郎、山本 圭介、王 冬、中島 寛

2017年第78回応用物理学会秋季学術講演会  2017.9 

非晶質Zr-Ge-N層上への金属堆積による低抵抗Geコンタクトの形成

岡本隼人, 山本 圭介, 王 冬, 中島 寛

2017年第64回応用物理学会春季学術講演会  2017.3 

ゲートスタック中へのAl 導入によるGe p-MOSFET の移動度向上機構

永冨雄太, 織田知輝, 坂口大成, 山本 圭介, 王 冬, 中島 寛

2017年第64回応用物理学会春季学術講演会  2017.3 

Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge　Amorphous Interlayer Invited International conference

2017.2 

Ge 光素子における基板キャリア密度と伝導型が及ぼす発光特性への影響

田中健太郎, 前蔵貴行, 本山千里, 山本 圭介, 王 冬, 中島 寛

平成28年度応用物理学会九州支部学術講演会  2016.12 

Achievement of low parasitic resistance in Ge n-MOSFET with embedded TiN source/drain structure International conference

T. Tateyama, Y. Nagatomi, S. Tanaka, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima

2016.12 

TOF-SIMS and XPS analyses for investigation of Al post-metallization annealing effect for Ge MOS capacitors with SiO2/GeO2 bilayer passivation International conference

W.-C. Wen, Y. Nagatomi, Liwei Zhao, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima

2016.12 

Influence of Al-PMA for fin type asymmetric metal/germanium/metal diodes International conference

C. Motoyama, T. Maekura, K. Tanaka, DONG WANG, Keisuke Yamamoto, Hiroshi Nakashima

2016.12 

反応性スパッタリングで形成したZrN 物性とGe とのコンタクト特性

板屋航, 岡本隼人, 山本 圭介, 王 冬, 中島 寛

平成28年度応用物理学会九州支部学術講演会  2016.12 

ゲートスタック中へのAl 導入によるp-MOSFET の移動度向上機構

坂口大成, 建山知輝, 永冨雄太, 山本 圭介, 王 冬, 中島 寛

平成28年度応用物理学会九州支部学術講演会  2016.12 

Electrical Properties of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer International conference

Hiroshi Nakashima, H. Okamoto, Keisuke Yamamoto, DONG WANG

2016.11 

Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer International conference

H. Okamoto, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima

2016 International Conference on Solid State Devices and Materials  2016.9 

非晶質Zr-Ge-N層上への金属堆積による低抵抗Geコンタクトの形成

岡本隼人, 山本 圭介, 王 冬, 中島 寛

2016年秋季第77回応用物理学会学術講演会  2016.9 

Al/SiO2/GeO2/Geゲートスタックに於ける界面ダイポールの生成と消失

永冨雄太, 建山知輝, 坂口大成, 山本 圭介, 王 冬, 中島 寛

2016年秋季第77回応用物理学会学術講演会  2016.9 

Characterization of Ge Tunnel FET with Metal/Ge Junction International conference

Keisuke Yamamoto, H. Okamoto, DONG WANG, Hiroshi Nakashima

7th Int. Symp. on Control of Semiconductor Interfaces and Int. SiGe Technology and Device Meeting 2016  2016.6 

Mobility enhancement in Ge p-MOSFET due to introduction of Al atoms in SiO2/GeO2 gate stacks International conference

Y. Nagatomi, S. Tanaka, T. Tateyama, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima

7th Int. Symp. on Control of Semiconductor Interfaces and Int. SiGe Technology and Device Meeting 2016  2016.6 

ゲートスタック中へのAl導入によるGe p-MOSFETの正孔移動度向上

永冨 雄太, 田中 慎太郎, 建山 知輝, 山本 圭介, 王 冬, 中島 寛

2016年第63回応用物理学会春季学術講演会  2016.3 

メタルS/D型Ge n-MOSFETの寄生抵抗低減

建山 知輝, 永冨 雄太, 田中 慎太郎, 山本 圭介, 王 冬, 中島 寛

2016年第63回応用物理学会春季学術講演会  2016.3 

金属/Ge接合及びn+/Ge接合を用いたGeトンネルFETの作製と評価

山本 圭介, 岡本 隼人, 王 冬, 中島 寛

2016年第63回応用物理学会春季学術講演会  2016.3 

Influences of metal/Ge contact and surface passivation on direct band gap light emission and detection for asymmetric metal/Ge/metal diodes International conference

Takayuki Maekura, Chisato Motoyama, Keisuke Yamamoto, Hiroshi Nakashima, DONG WANG

9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar  2016.1 

Mechanism of mobility enhancement in Ge p-MOSFET due to introduction of Al atoms in SiO2/GeO2 gate stacks International conference

Yuta Nagatomi, Shintaro Tanaka, Tomoki Tateyama, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima

9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar  2016.1 

Electrical properties of metal-nitride/Ge contacts and the application to Ge optoelectronic devices Invited International conference

Hiroshi Nakashima, Keisuke Yamamoto, DONG WANG

The 2nd International Conference & Exhibition for Nanopia  2015.11 

Electrical characterization of SiGe-on-insulator fabricated using Ge condensation by dry oxidation Invited International conference

Hiroshi Nakashima, Keisuke Yamamoto, DONG WANG

American Vacuum Society (AVS) Shanghai Thin Film Conference  2015.10 

Electrical Properties of Group 4 Metal-Nitride/Ge Contacts and the Application to Ge Optoelectronic Devices Invited International conference

Hiroshi Nakashima, Keisuke Yamamoto, DONG WANG

228th ECS Meeting  2015.10 

Influences of Metal/Ge Contact and Surface Passivation on Light Emission and Detection for Asymmetric Metal/Ge/Metal Diodes International conference

Takayuki Maekura, DONG WANG, Keisuke Yamamoto, Hiroshi Nakashima

2015 International Conference on Solid State Devices and Materials (SSDM2015)  2015.9 

PtGe-Source/Drain Ge p-MOSFET with High On/Off Ratio and Low Parasitic Resistance International conference

Shintaro Tanaka, Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima

2015 International Conference on Solid State Devices and Materials (SSDM2015)  2015.9 

低い正孔障壁を有するPtGe/Geコンタクトの作製とメタルS/D型Ge p-MOSFETへの適用

永冨 雄太, 田中 慎太郎, 長岡 裕一, 山本 圭介, 王 冬, 中島 寛

電子情報通信学会 シリコン材料・デバイス研究会  2015.6 

Barrier Height Modulation for Metal/Ge Contacts with Nitrogen-Contained Amorphous Interlayers International conference

Keisuke Yamamoto, Ryutaro Noguchi, Masatoshi Mitsuhara, Minoru Nishida, Toru Hara, DONG WANG, Hiroshi Nakashima

The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9)  2015.5 

Contact Formation for Metal Source/Drain Ge-CMOS Invited International conference

Hiroshi Nakashima, Keisuke Yamamoto, DONG WANG, Masatoshi Mitsuhara, Ryutaro Noguchi, Keisuke Hiidome, Minoru Nishida

The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9)  2015.5 

ALDとECRプラズマ酸化による酸化膜固定電荷密度の制御

永冨 雄太, 長岡 裕一, 田中 慎太郎, 山本 圭介, 王 冬, 中島 寛

2015年第62回応用物理学会春季学術講演会  2015.3 

非対称-金属/Ge/金属構造を有する光素子の試作と特性評価

前蔵 貴行, 山本 圭介, 王 冬, 中島 寛

2015年第62回応用物理学会春季学術講演会  2015.3 

Effect of Al Post Metallization Annealing on Al2O3/GeO2/Ge Gate Stack International conference

Yuta Nagatomi, Yuichi Nagaoka, Shintaro Tanaka, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima

8th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar  2015.1 

Electrical Properties of Metal/Ge Contacts with Nitrogen-Contained Amorphous Interlayers Invited International conference

Keisuke Yamamoto, Ryutaro Noguchi, Masatoshi Mitsuhara, Minoru Nishida, Toru Hara, DONG WANG, Hiroshi Nakashima

8th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar  2015.1 

バルクGe発光素子のデバイス構造による発光効率の変化

前蔵 貴行, 山本 圭介, 王 冬, 中島 寛

2014年応用物理学会九州支部学術講演会  2014.12 

原子層堆積法により形成したAl2O3/GeゲートスタックにおけるAl堆積後熱処理の有効性

田中 慎太郎, 長岡 裕一, 永冨 雄太, 山本 圭介, 王 冬, 中島 寛

2014年応用物理学会九州支部学術講演会  2014.12 

Contact properties of group IV metal-nitrides(TiN, ZrN, HfN) on Ge International conference

Hiroshi Nakashima, Keisuke Yamamoto, DONG WANG, Masatoshi Mitsuhara, Ryutaro Noguchi, Keisuke Hiidome, Minoru Nishida

2014.11 

Investigation of Al-PMA Effect on Al2O3/GeOX/Ge Gate Stack International conference

Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima

226th ECS Meeting  2014.10 

非晶質Ge界面層とNによるGeコンタクトの外因性準位とSファクターの変調

長岡 裕一, 永冨 雄太, 山本 圭介, 王 冬, 中島 寛

2014年秋季第75回応用物理学会学術講演会  2014.9 

n形3C-SiCへのゲートスタックの低温形成

山本 裕介, 村山 亮介, 山本 圭介, 王 冬, 中島 寛, 菱木 繁臣, 川村 啓介

2014年秋季第75回応用物理学会学術講演会  2014.9 

Effect of Kr/O2ECR Plasma Oxidation on Electrical Properties of Al2O3/Ge Gate Stacked Fabricated by ALD International conference

Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima

2014 International Conference on Solid State Devices and Materials (SSDM2014)  2014.9 

Al2O3/GeOx/Geゲートスタックに於けるAl-PMA効果の調査

永冨 雄太, 長岡 裕一, 山本 圭介, 王 冬, 中島 寛

電子情報通信学会 シリコン材料・デバイス研究会 (応用物理学会, シリコンテクノロジー分科会との合同開催)  2014.6 

Fermi Level Pinning Alleviation at the TiN, ZrN, and HfN/Ge Interfaces International conference

Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima

7th International Silicon-Germanium Technology and Device Meeting  2014.6 

Metal Source/Drain Ge p-MOSFET with HfGe/Ge Contact International conference

Keisuke Yamamoto, Takahiro Sada, DONG WANG, Hiroshi Nakashima

The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)  2013.6 

Low temperature fabrication of Ohmic contact for p-type 4H-SiC using Al/Ti/Sn International conference

Kota Hatayama, Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima

The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)  2013.6 

Fabrication of TiN/Si Contact with Low Electron Barrier Height and Its Application to Back-Gate MOSFET International conference

Keisuke Yamamoto, Kojiro Asakawa, DONG WANG, Hiroshi Nakashima

The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)  2013.6 

Al/Ti/Snを用いたp形4H-SiCへのオーミックコンタクトの低温形成

畑山紘太, 山本 圭介, 王 冬, 中島 寛

2013年春季第60回応用物理学関係連合講演会  2013.3 

Ge-MOSキャパシタの正確な界面準位密度評価：一定温度DLTS

中島 寛, 王 冬, 山本 圭介

2013年春季第60回応用物理学関係連合講演会  2013.3 

極薄GeOX界面層を有するY2O3/Ge ゲートスタックの低温形成

永冨雄太, 小島秀太, 亀沢翔, 山本 圭介, 王 冬, 中島 寛

2013年春季第60回応用物理学関係連合講演会  2013.3 

TiN/Geコンタクトにおける低電子障壁発現機構の解明

山本 圭介, 光原 昌寿, 西田 稔, 王 冬, 中島 寛

2013年春季第60回応用物理学関係連合講演会  2013.3 

HfGeメタル・ソース/ドレインGe p-MOSFETの高移動度化

佐田隆宏, 山本 圭介, 王 冬, 中島 寛

2013年春季第60回応用物理学関係連合講演会  2013.3 

Contact Formations for Schottky Source/Drain Ge-CMOS Invited International conference

Hiroshi Nakashima, Yamamoto Keisuke, DONG WANG

6th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar  2013.2 

リセスチャネルTiN メタル・ソース/ドレイン型 Ge n-MOSFETの作製

亀沢翔, 山本圭介, 王 冬, 中島 寛

2012年応用物理学会九州支部学術講演会  2012.12 

極薄GeO2-ILを有するAl2O3/Geゲートスタックの形成

永冨雄太, 小島秀太, 山本圭介, 王 冬, 中島 寛

2012年応用物理学会九州支部学術講演会  2012.12 

ウェットエッチングによるSi n-MOSFETのデバイス特性の変化

村山亮介, 朝川幸二朗, 山本圭介, 王 冬, 中島 寛

2012年応用物理学会九州支部学術講演会  2012.12 

p形4H-SiCへのAl/Ti/Siオーミックコンタクトの低温形成

畑山紘太, 山本圭介, 王 冬, 中島 寛

2012年応用物理学会九州支部学術講演会  2012.12 

Gate Stack and Source/Drain Junction Formations for High-Mobility Ge MOSFETs Invited International conference

Hiroshi Nakashima, K. Yamamoto, H. Yang, DONG WANG

222nd ECS Meeting  2012.10 

High Hole-Mobility Ge p-MOSFET with HfGe Schottky Source/Drain International conference

T. Sada, K. Yamamoto, H. Yang, DONG WANG, Hiroshi Nakashima

2012 International Conference on Solid State Devices and Materials  2012.9 

Fabrication of ZrSiO/Ge Gate Stacks with GeO2 and ZrGeO Interlayers International conference

S. Kojima, K. Sakamoto, Y. Iwamura, K. Hirayama, K. Yamamoto, DONG WANG, Hiroshi Nakashima

2012 International Conference on Solid State Devices and Materials  2012.9 

Fabrication of TiN/Si Contact with Low Electron Barrier Height and Electrical Characterization of Si-On-Insulator Using Back-Gate MOSFET International conference

K. Asakawa, K. Yamamoto, DONG WANG, Hiroshi Nakashima

2012 International Conference on Solid State Devices and Materials  2012.9 

低電子障壁TiN/Siコンタクトの形成とback-gate MOSFETへの応用

朝川幸二朗, 山本圭介, 王 冬, 中島 寛

2012年秋季第73回応用物理学会学術講演会  2012.9 

整流性TiN/p-Geコンタクトに於ける表面パッシベーションの重要性

山本圭介, 王 冬, 中島 寛

2012年秋季第73回応用物理学会学術講演会  2012.9 

TiN/Geコンタクトに於けるフェルミレベルピンニング変調とMOSデバイス応用

山本圭介, 井餘田昌俊, 王 冬, 中島 寛

応用物理学会分科会 シリコンテクノロジー：「ゲートスタック研究の進展－不純物分布および接合界面制御を中心に」  2012.6 

低障壁TiN/n-Geコンタクトの形成とコンタクト抵抗評価

山本 圭介、原田 健司、楊 海貴、王 冬、中島 寛

2012年春季第59回応用物理学関係連合講演会  2012.3 

TiNショットキー・ソース/ドレインGe n-MOSFETの作製

山本 圭介、山中 武、原田 健司、佐田 隆宏、坂本 敬太、小島 秀太、王 冬、 中島 寛

2012年春季第59回応用物理学関係連合講演会  2012.3 

HfGex ショットキー・ソース/ドレインGe p-MOSFETの作製

山本 圭介、佐田 隆宏、山中 武、坂本 敬太、小島 秀太、楊 海貴、王 冬、中島 寛

2012年春季第59回応用物理学関係連合講演会  2012.3 

1.0 nm EOTを有するhigh-k/Ge ゲートスタックの形成

小島 秀太、坂本 敬太、山本 圭介、王 冬、中島 寛

2012年春季第59回応用物理学関係連合講演会  2012.3 

TiN/Geコンタクトにおける低電子障壁発現機構の解明(Ⅱ)

山本 圭介, 光原 昌寿, 吹留 佳祐, 野口 竜太郎, 西田 稔, 王 冬, 中島 寛

2014年第61回応用物理学会春季学術講演会  2014.3 

ゲートスタックへのHf導入によるメタル・ソース／ドレイン Ge p-MOSFETの高移動度化

山本 圭介, 佐田 隆宏, 王 冬, 中島 寛

電子情報通信学会技術研究報告  2013.6 

Development of Metal Source/Drain Ge-CMOS Using TiN/Ge and HfGe/Ge contacts Invited International conference

Hiroshi Nakashima, Keisuke Yamamoto, DONG WANG

224th ECS Meeting  2013.10 

Fabrication of Metal-Nitride/Si Contactswith Low Electron Barrier Height International conference

Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima

224th ECS Meeting  2013.10 

次世代CMOS実現に向けた金属/半導体コンタクトの障壁制御

山本 圭介, 王 冬, 中島 寛

第5回 半導体材料・デバイスフォーラム  2013.11 

Al2O3/Ge 構造形成後のECR プラズマ酸化による固定電荷密度の制御

長岡 裕一, 永冨 雄太, 山本 圭介, 王 冬, 中島 寛

第5回 半導体材料・デバイスフォーラム  2013.11 

Fabrication of Ge MOS and Ge Light Emitting Devices Using Contacts with Low Electron and Hole Barrier Heights Invited

Hiroshi Nakashima, Keisuke Yamamoto, DONG WANG

7th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, "Atomically Controlled Processsing for Ultralarge Scale Integration"  2014.1 

Fabrication of Metal-Nitride/Ge Contacts with Extremely Low Electron Barrier Height and Its Clarification of the Physical Origin

Keisuke Yamamoto, DONG WANG, Hiroshi Nakashima

7th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, "Atomically Controlled Processsing for Ultralarge Scale Integration"  2014.1 

Al2O3/Ge形成後のプラズマ酸化によるゲートスタックの低温形成

永冨 雄太, 長岡 裕一, 山本 圭介, 王 冬, 中島 寛

2014年第61回応用物理学会春季学術講演会  2014.3 

非対称－金属/Ge/金属素子の試作とその発光特性

亀沢 翔, 花田 尊徳, 山本 圭介, 王 冬, 中島 寛

2014年第61回応用物理学会春季学術講演会  2014.3 

Split-CV法を用いたバックゲートSOI-MOSFETの実効移動度評価

朝川 幸二朗, 原田 健司, 山本 圭介, 王 冬, 中島 寛

2011年応用物理学会九州支部学術講演会  2011.11 

Effective Passivation of Interface Dipole in TiN-Gate Ge-MOS Capacitor with Ultrathin SiO2/GeO2 Bilayer by Nitrogen Incorporation

Keita Sakamoto, Yoshiaki Iwamura, Keisuke Yamamoto, Haigui Yang, DONG WANG, Hiroshi Nakashima

2011 International Conference on Solid State Devices and Materials (SSDM2011)  2011.9 

High-Electron-Mobility Ge n-MOSFET with TiN Metal Gate

Takeshi Yamanaka, Keisuke Yamamoto, Keita Sakamoto, Haigui Yang, DONG WANG, Hiroshi Nakashima

2011 International Conference on Solid State Devices and Materials (SSDM2011)  2011.9 

Ge 上へのZrとSiO2堆積によるhigh-k/Geゲートスタックの形成

小島 秀太, 坂本 敬太, 山本 圭介, 楊 海貴, 王 冬, 中島 寛

2011年応用物理学会九州支部学術講演会  2011.11 

極薄ゲート絶縁膜を有するGe-MOSFET作製のための表面保護プロセスの検討

高橋 涼介, 山中 武, 山本 圭介, 楊 海貴, 王 冬, 中島 寛

2011年応用物理学会九州支部学術講演会  2011.11 

ショットキー ソース/ドレイン Ge p-MOSFETの作製と電気的特性

佐田 隆宏, 楊 海貴, 山本 圭介, 王 冬, 中島 寛

2011年応用物理学会九州支部学術講演会  2011.11 

Screening of academic papers

Role(s)： Peer review

2022

組織委員会副委員長 International contribution

2021.12

Screening of academic papers

Role(s)： Peer review

2021

組織委員会副委員長 International contribution

2020.12

Screening of academic papers

Role(s)： Peer review

2020

組織委員会副委員長 International contribution

2019.11

Screening of academic papers

Role(s)： Peer review

2019

組織委員会委員長 International contribution

2018.11

Screening of academic papers

Role(s)： Peer review

2018

組織委員会副委員長 International contribution

2017.11 - 2017.12

司会（Moderator） International contribution

2017.2

Screening of academic papers

Role(s)： Peer review

2017

組織委員会委員 International contribution

2016.12

座長（Chairmanship） International contribution

（ 九州大学 ） 2015.12

座長（Chairmanship） International contribution

2015.10

座長（Chairmanship） International contribution

（ 九州大学総合理工学研究院 ） 2015.2

座長（Chairmanship） International contribution

（ 済州島 ） 2014.11

国際学会現地委員会委員 International contribution

2013.6

座長（Chairmanship） International contribution

2010.11

Ge-CMOSと混載可能な高性能Ge-光素子実現のための基盤技術開発

Grant number：26289090  2014 - 2016

日本学術振興会  科学研究費助成事業  基盤研究(B)

Ge結晶への局所歪み技術の開発とトランジスタ応用

Grant number：23760017  2011 - 2012

科学研究費助成事業  若手研究(B)

高性能バイポーラトランジスタのための高精度・局所歪み評価

Grant number：21760011  2009 - 2010

科学研究費助成事業  若手研究(B)

丸文研究交流財団交流賛助費 課題：高性能バイポーラトランジスタのための高精度・局所歪み評価

2009

精密欠陥制御による高品質SiGe仮想基板の形成

2006 - 2007

日本学術振興会  外国人特別研究員

エネルギー環境理工学基礎I

2023.4 - 2024.3   Full year

エネルギー環境理工学演習II

2023.4 - 2024.3   Full year

エネルギー環境理工学特論II

2023.4 - 2024.3   Full year

エネルギー環境理工学特論I

2023.4 - 2024.3   Full year

エネルギー環境理工学演習I

2023.4 - 2024.3   Full year

エネルギー環境理工学基礎II

2023.4 - 2024.3   Full year

IoTデバイス特論

2023.4 - 2023.9   First semester

エネルギー・環境・材料特論 I

2023.4 - 2023.9   First semester

エネルギー・環境・材料特論 I

2022.10 - 2023.3   Second semester

エネルギー環境理工学演習I

2022.4 - 2023.3   Full year

エネルギー環境理工学特論II

2022.4 - 2023.3   Full year

エネルギー環境理工学演習II

2022.4 - 2023.3   Full year

IoTデバイス特論

2022.4 - 2022.9   First semester

エネルギー・環境・材料特論 I

2022.4 - 2022.9   First semester

エネルギー・環境・材料特論 I

2021.10 - 2022.3   Second semester

エネルギー・環境・材料特論 I

2021.4 - 2021.9   First semester

エネルギー・環境・材料特論 I

2020.10 - 2021.3   Second semester

エネルギー・環境・材料特論 I

2020.4 - 2020.9   First semester

エネルギー・環境・材料特論 I

2019.10 - 2020.3   Second semester

エネルギー・環境・材料特論 I

2019.4 - 2019.9   First semester

エネルギー・環境・材料特論 I

2018.10 - 2019.3   Second semester

エネルギー・環境・材料特論 I

2018.4 - 2018.9   First semester

エネルギー・環境・材料特論 I

2017.10 - 2018.3   Second semester

エネルギー・環境・材料特論 I

2017.4 - 2017.9   First semester

英文ライティング

2017.4 - 2017.9   First semester

ソーラーエネルギー概論

2016.10 - 2017.3   Second semester

英文ライティング

2016.4 - 2016.9   First semester

ソーラーエネルギー概論

2016.4 - 2016.9   First semester

ソーラーエネルギー概論

2015.10 - 2016.3   Second semester

ソーラーエネルギー概論

2015.4 - 2015.9   First semester

ソーラーエネルギー概論

2014.10 - 2015.3   Second semester

ソーラーエネルギー概論

2014.4 - 2014.9   First semester

ソーラーエネルギー概論

2013.10 - 2014.3   Second semester

ソーラーエネルギー概論

2013.4 - 2013.9   First semester

太陽エネルギー概論 - 基礎、技術と応用

2012.10 - 2013.3   Second semester

2022.8

釜山大学

キャンパスアジアプラス EEST ASIA 2022 サマースクール

2022.3

九州大学総合理工学府

キャンパスアジア EEST ASIA 2022 スプリングセミナー

2021.12

Chinese Secretariat of CAMPUS Asia

Future-oriented Transnational Higher Education in Asia

2021.9

独立行政法人大学改革支援・学位授与機構

令和3 年度大学質保証フォーラム ― オンライン教育の支援と質保証―コロナ時代を越えて

2021.8

九州大学総合理工学府

キャンパスアジア EEST ASIA 2021 サマースクール

2020.8

上海交通大学

キャンパスアジア EEST ASIA 2020 サマースクール

2019.8

釜山大学

キャンパスアジア EEST ASIA 2019 サマースクール

2019.4

上海交通大学

キャンパスアジア EEST ASIA 2019 スプリングセミナー

2018.8

九州大学

キャンパスアジア EEST ASIA 2018 サマースクール

2018.8

日中韓三国協力事務局、大学改革支援・学位授与機構

日中韓における学位の相互認証に関する共同研究に係る専門家会合

2018.2

釜山大学

キャンパスアジア EEST ASIA 2018 スプリングセミナー

2017.8

上海交通大学

キャンパスアジア EEST ASIA 2017 サマースクール

2017.6

総合理工学府・キャンパスアジア

キャンパスアジア校外学習（新日鐵住金、日産苅田工場、八幡穴生浄水場）

2017.2

九州大学

キャンパスアジア EEST ASIA 2017 スプリングセミナー

2016.12

· Korean Ministry of Education · Korean Council for University Education

The 1st Campus-Asia Trilateral Rector’s Forum（12月13日、韓国ソウル）

2016.8

釜山国立大学

キャンパスアジア EEST ASIA 2016 サマースクール

2016.4

上海交通大学

キャンパスアジア EEST ASIA 2016 スプリングセミナー

2015.8

九州大学

キャンパスアジア EEST ASIA 2015 サマースクール

2015.3

主催：独立行政法人科学技術振興機構（JST） 共催：中国科学技術協会国際連絡部、中国教育部（省）留学サービスセンター、人民網、独立行政法人日本学術振興会、独立行政法人日本学生支援機構。

日中大学フェア＆フォーラム in CHINA 2015

2015.2

九州大学

キャンパスアジア EEST ASIA 2015 スプリングセミナー

2014.10

上海交通大学

4th Joint School Symposium for the Asian Youth Center Project

2014.8

上海交通大学

キャンパスアジア EEST ASIA 2014 サマースクール

2014.2

九州大学

キャンパスアジア EEST ASIA 2014 スプリングセミナー

2013.8

九州大学

キャンパスアジア EEST ASIA 2013 サマースクール

2012.8

釜山国立大学

キャンパスアジア EEST ASIA 2012 サマースクール

2012.3

九州大学

キャンパスアジア EEST ASIA 2012 スプリングセミナー

2022  Special Affairs 

2022  Special Affairs 

2021  Special Affairs 

2021  Special Affairs 

2020  Special Affairs 

2019  Coaching of Students' Association 

2019  Coaching of Students' Association 

2019  Coaching of Students' Association 

2019  Coaching of Students' Association 

2019  Special Affairs 

2019  Special Affairs 

2019  Special Affairs 

2018  Coaching of Students' Association 

2018  Coaching of Students' Association 

2018  Coaching of Students' Association 

2018  Coaching of Students' Association 

2018  Special Affairs 

2018  Special Affairs 

2018  Special Affairs 

2018  Special Affairs 

2018  Special Affairs 

2017  Coaching of Students' Association 

2017  Coaching of Students' Association 

2017  Coaching of Students' Association 

2017  Coaching of Students' Association 

2017  Coaching of Students' Association 

2017  Coaching of Students' Association 

2017  Special Affairs 

2017  Special Affairs 

2017  Special Affairs 

2016  Coaching of Students' Association 

2016  Coaching of Students' Association 

2016  Coaching of Students' Association 

2016  Coaching of Students' Association 

2016  Coaching of Students' Association 

2016  Coaching of Students' Association 

2016  Special Affairs 

2016  Special Affairs 

2016  Special Affairs 

2016  Special Affairs 

2016  Special Affairs 

2016  Special Affairs 

2015  Special Affairs 

2015  Special Affairs 

2015  Special Affairs 

2014  Special Affairs 

2014  Special Affairs 

2014  Special Affairs 

2014  Special Affairs 

2013  Special Affairs 

2013  Special Affairs 

2012  Special Affairs 

2012  Special Affairs