研究・産学連携活動表彰

2009.5   九州大学  

EMS賞

2005.7   本シンポジウムでは、平成9年（第16回）から優れた研究発表をなされた、あるいは討論等によりこの会議を盛り上げてくれた若手研究者を対象としたEMS賞を授与しています。

日本結晶成長学会 第2回奨励賞

2004.8   日本結晶成長学会   受賞論文：Y. Kangawa, T. Ito, Y. S. Hiraoka, A. Taguchi, K. Shiraishi, T. Ohachi, “Theoretical approach to influence of As2 pressure on GaAs growth kinetics”, Surf. Sci. 507-510(2002)285-289

放談賞

2003.8   日本結晶成長学会  

学生優秀発表賞

1999.1   日本金属学会九州支部 日本鉄鋼協会九州支部   寒川義裕、桑野範之、沖憲典、“InGaAs/(110)InP混晶におけるCuAu-I型規則化メカニズムの原子間ポテンシャルによる解析”

講演奨励賞

1996.1   応用物理学会   寒川義裕、桑野範之、沖憲典、“III-V族半導体混晶におけるTP-A型規則化のモンテカルロ法による解析”

Adiabatic Potential for Conformational Change of VGa–VN Complex Defects in GaN Reviewed International journal

Jota Nakamura, Masato Oda, Yoshihiro Kangawa

physica status solidi (b)   2024   2400026   2024.3   （ ISSN:0370-1972 eISSN:1521-3951 ）

First-principles calculations of α-Ga2O3/Al2O3 superlattice band structures Reviewed International journal

626 ( 15 )   127477   2024.1

Advances in process informatics: AI-assisted exploration of material manufacturing process Invited Reviewed International journal

Yoshihiro Kangawa

JSAP Review   2023   230215   2023.10

Polar GaN Surfaces under Gallium Rich Conditions: Revised Thermodynamic Insights from Ab Initio Calculations Reviewed International journal

Pawel Kempisty, Karol Kawka, Akira Kusaba, Yoshihiro Kangawa

Materials   16 ( 17 )   5982   2023.8

Progress in Surface Science in III-Nitride MOCVD Invited Reviewed

Yoshihiro Kangawa, Akira Kusaba

Vacuum & Surface Science   66 ( 4 )   227 - 232   2023.4

Bandgap Change in Short‐Period InN/AlN Superlattices Induced by Lattice Strain Reviewed International journal

2023   2200549   2023.2

Polarization Doping in a GaN-InN System—Ab Initio Simulation Reviewed International journal

16 ( 3 )   1227   2023.1

Beyond <i>ab initio</i> reaction simulator: An application to GaN metalorganic vapor phase epitaxy

Kusaba, A; Nitta, S; Shiraishi, K; Kuboyama, T; Kangawa, Y

APPLIED PHYSICS LETTERS   121 ( 16 )   2022.10   （ ISSN:0003-6951 eISSN:1077-3118 ）

Polarization doping—Ab initio verification of the concept: Charge conservation and nonlocality Reviewed International journal

132 ( 6 )   064301   2022.8

An atomistic insight into reactions and free-energy profiles of NH3 and Ga on GaN surfaces during the epitaxial growth Reviewed International journal

Mauro Boero, Kieu My Bui, Kenji Shiraishi, Kana Ishisone, Yoshihiro Kangawa, Atsushi Oshiyama

Applied Surface Science   599   153935   2022.6

DFT Modeling of Unintentional Oxygen Incorporation Enhanced by Magnesium in GaN (0001) and AlN (0001) Growth Surfaces during Metal‐Organic Vapor‐Phase Epitaxy Reviewed International journal

2100430   2022.2

Exploration of a large-scale reconstructed structure on GaN(0001) surface by Bayesian optimization Reviewed International journal

A. Kusaba, Y. Kangawa, T. Kuboyama, A. Oshiyama

Applied Physics Letters   120 ( 2 )   021602   2022.1

Crystal growth and process informatics:

Kangawa Yoshihiro

Journal of the Japanese Association for Crystal Growth   49 ( 1 )   n/a   2022   （ ISSN:03856275 eISSN:21878366 ）

Al coverage of AlN(0001) surface and Al vapor pressure – Thermodynamic assessment based on ab initio calculations Reviewed International journal

Pawel Strak, Ashfaq Ahmad, Pawel Kempisty, Jacek Piechota, Konrad Sakowski, Grzegorz Nowak, Yoshihiro Kangawa, Jan Łażewski, Stanislaw Krukowski

203 ( 15 )   111159   2021.12

Effects of Mg dopant in Al-composition-graded Al x Ga1− x N (0.45≤ x) on vertical electrical conductivity of ultrawide bandgap AlGaN p–n junction Reviewed International journal

14 ( 9 )   096503   2021.8

Adsorption of nitrogen at AlN (000-1) surface–decisive role of structural and electronic factors Reviewed International journal

713   121891   2021.6

Band gap tuning in InxGa1-xN/InyGa1-yN short period superlattices Reviewed International journal

I. Gorczyca, G. Staszczak, G. Targowski, E. Grzanka, J. Smalc-Koziorowska, T. Suski, T. Kawamura, Y. Kangawa

Superlattices and Microstructures   155   106907   2021.5

Theoretical study on the effect of H2 and NH3 on trimethylgallium decomposition process in GaN MOVPE Reviewed International journal

Soma Sakakibara, Kenta Chokawa, Masaaki Araidai, Akira Kusaba, Yoshihiro Kangawa, Kenji Shiraishi

Japanese Journal of Applied Physics   60 ( 4 )   045507   2021.4

Facet stability of GaN during tri-halide vapor phase epitaxy: an ab initio-based approach Reviewed International journal

Daichi Yosho, Yuriko Matsuo, Akira Kusaba, Pawel Kempisty, Yoshihiro Kangawa, Hisashi Murakami, Akinori Koukitu

CrystEngComm   23 ( 6 )   1423 - 1428   2021.1

Absolute surface energies of oxygen-adsorbed GaN surfaces Reviewed

Takahiro Kawamura, Toru Akiyama, Akira Kitamoto, Masayuki Imanishi, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, Koichi Kakimoto

Journal of Crystal Growth   549   125868   2020.11

Self-formed compositional superlattices triggered by cation orderings in m-plane Al1−xInxN on GaN Reviewed International journal

10   18570-1 - 11   2020.10

Ab initio and thermodynamic picture of Al adsorption of AlN (0001) surface–Role of bond creation and electron transition contributions Reviewed International journal

532   147419-1 - 12   2020.8

Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO Reviewed

Tomoya Kimura, Kazuki Ohnishi, Yuki Amano, Naoki Fujimoto, Masaaki Araidai, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Yoshihiro Kangawa, Kenji Shiraishi

Japanese Journal of Applied Physics   59 ( 8 )   088001   2020.7

Screw dislocation that converts p-type GaN to n-type: Microscopic study on Mg condensation and leakage current in p–n diodes Reviewed

Takashi Nakano, Yosuke Harashima, Kenta Chokawa, Kenji Shiraishi, Atsushi Oshiyama, Yoshihiro Kangawa, Shigeyoshi Usami, Norihito Mayama, Kazuya Toda, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano

Applied Physics Letters   117 ( 1 )   012105   2020.7

Oxygen Incorporation Kinetics in Vicinal m(10−10) Gallium Nitride Growth by Metal-Organic Vapor Phase Epitaxy Reviewed

14 ( 6 )   2020.6

First-Principles Calculation of Bandgaps of Al_1−xIn_xN Alloys and Short-Period Al_1−xIn_xN/Al_1−yIn_yN Superlattices Reviewed International journal

Takahiro Kawamura, Yuma Fujita, Yuya Hamaji, Toru Akiyama, Yoshihiro Kangawa, Izabela Gorczyca, Tadeusz Suski, Małgorzata Wierzbowska, Stanisław Krukowski

257 ( 4 )   1900530-1 - 5   2020.4

Computational study of oxygen stability in vicinal m(10−10)-GaN growth by MOVPE Reviewed International journal

13   055507-1 - 4   2020.4

Modeling carbon coverage on polar GaN surfaces during MOVPE Reviewed International journal

#Daichi Yosho, #Yuya Inatomi, Yoshihiro Kangawa

Japanese Journal of Applied Physics   59   048002-1 - 5   2020.4

Theoretical study of adatom stability on polar GaN surfaces during MBE and MOVPE Reviewed International journal

Y. Inatomi, Y. Kangawa

Applied Surface Science   502   144205-1 - 8   2020.2

Thermodynamic analysis for nonpolar III-nitride surfaces under metalorganic vapor-phase epitaxy conditions Reviewed International journal

Tsunashi Shimizu, Yuki Seta, Toru Akiyama, Abdul Muizz Pradipto, Kohji Nakamura, Tomonori Ito, Akira Kusaba, @Yoshihiro Kangawa

Japanese Journal of Applied Physics   59   028003-1 - 4   2020.1

Chemical vapor deposition condition dependence of reconstructed surfaces on 4H-SiC (0001), (000-1), and (1-100) surfaces Reviewed International journal

Kenta Chokawa, Emi Makino, Norikazu Hosokawa, Shoichi Onda, Yoshihiro Kangawa, and Kenji Shiraishi

Japanese Journal of Applied Physics   58   115501-1 - 7   2019.10

Thermodynamic analysis of semipolar GaN and AlN under metalorganic vapor phase epitaxy growth conditions Reviewed International journal

Yuki Seta, Abdul Muizz Pradipto, Toru Akiyama, Kohji Nakamura, Tomonori Ito, Akira Kusaba, @Yoshihiro Kangawa

Japanese Journal of Applied Physics   58   SC1014-1 - 9   2019.5

Electronic structure analysis of core structures of threading dislocations in GaN Reviewed International journal

Takashi Nakano, Kenta Chokawa, Masaaki Araidai, Kenji Shiraishi, Atsushi Oshiyama, Akira Kusaba, Yoshihiro Kangawa, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano

2019 Compound Semiconductor Week, CSW 2019 2019 Compound Semiconductor Week, CSW 2019 - Proceedings   2019.5

CH₄ Adsorption Probability on GaN(0001) and (000-1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Carbon Contamination in the Films Reviewed

Akira Kusaba, Guanchen Li, Pawel Kempisty, Michael R. von Spakovsky, Yoshihiro Kangawa

Materials   12 ( 6 )   972-1 - 14   2019.3

First-principle study of ammonia decomposition and nitrogen incorporation on the GaN surface in metal organic vapor phase epitaxy Reviewed

Kieu My Bui, Jun Ichi Iwata, Yoshihiro Kangawa, Kenji Shiraishi, Yasuteru Shigeta, Atsushi Oshiyama

Journal of Crystal Growth   507   421 - 424   2019.2

Kinetic-thermodynamic model for carbon incorporation during step-flow growth of GaN by metalorganic vapor phase epitaxy Reviewed International journal

Y. Inatomi, Yoshihiro Kangawa, A. Pimpinelli, T. L. Einstein

Physical Review Materials   3 ( 1 )   013401-1 - 8   2019.1

Chemical vapor deposition condition dependence of reconstructed surfaces on 4H-SiC (0001), (0001), and (1100) surfaces Reviewed

Kenta Chokawa, Emi Makino, Norikazu Hosokawa, Shoichi Onda, Yoshihiro Kangawa, Kenji Shiraishi

Japanese Journal of Applied Physics   58 ( 11 )   2019.1

First-principles study of polar, nonpolar, and semipolar GaN surfaces during oxide vapor phase epitaxy growth Reviewed International journal

Takahiro Kawamura, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, Koichi Kakimoto, Toru Akiyama

Japanese Journal of Applied Physics   57 ( 11 )   115504-1 - 7   2018.11

Reaction Pathway of Surface-Catalyzed Ammonia Decomposition and Nitrogen Incorporation in Epitaxial Growth of Gallium Nitride Reviewed International journal

Kieu My Bui, Jun Ichi Iwata, Yoshihiro Kangawa, Kenji Shiraishi, Yasuteru Shigeta, Atsushi Oshiyama

Journal of Physical Chemistry C   122 ( 43 )   24665 - 24671   2018.11

Thermodynamic analysis of trimethylgallium decomposition during GaN metal organic vapor phase epitaxy Reviewed International journal

Kazuki Sekiguchi, Hiroki Shirakawa, Kenta Chokawa, Masaaki Araidai, @Yoshihiro Kangawa, @Koichi Kakimoto, Kenji Shiraishi

Japanese Journal of Applied Physics   57 ( 4S )   04FJ03-1 - 4   2018.3

First-principles study of the surface phase diagrams of GaN(0001) and (000-1) under oxide vapor phase epitaxy growth conditions Reviewed International journal

T. Kawamura, A. Kitamoto, M. Imade, M. Yoshimura, Y. Mori, Y. Morikawa, Y. Kangawa, K. Kakimoto

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   254 ( 8 )   1600706-1 - 6   2017.8

Modeling the non-equilibrium process of the chemical adsorption of ammonia on GaN(0001) reconstructed surfaces based on steepest-entropy-ascent quantum thermodynamics Reviewed International journal

Akira Kusaba, Guanchen Li, Michael R. von Spakovsky, Yoshihiro Kangawa, Koichi Kakimoto

Materials   10 ( 8 )   948-1 - 13   2017.8

First Principles and Themodynamical Studies on Matel Organic Vaper Phase Epitaxy of GaN Invited Reviewed International journal

Kenji Shiraishi, Kazuki Sekiguchi, Hiroki Shirakawa, Kenta Chokawa, Masaaki Araidai, @Yoshihiro Kangawa, @Koichi Kakimoto

ECS Transactions   80 ( 1 )   295 - 301   2017.8

Thermodynamic analysis of (0001) and (000(1)over-bar) GaN metalorganic vapor phase epitaxy Reviewed International journal

A. Kusaba, Y. Kangawa, P. Kempisty, H. Valencia, K. Shiraishi, Y. Kumagai, K. Kakimoto, A. Koukitu

JAPANESE JOURNAL OF APPLIED PHYSICS   56 ( 7 )   070304-1 - 4   2017.7

Theoretical study of the composition pulling effect in InGaN metalorganic vapor-phase epitaxy growth Reviewed International journal

Y. Inatomi, Y. Kangawa, T. Ito, T. Suski, Y. Kumagai, K. Kakimoto, A. Koukitu

JAPANESE JOURNAL OF APPLIED PHYSICS   56 ( 7 )   078003-1 - 3   2017.7

Chemical beam epitaxy of GaAs1-xNx using MMHy and DMHy precursors, modeled by ab initio study of GaAs(100) surfaces stability over As-2, H-2 and N-2 Reviewed International journal

H. VALENCIA, Y. Kangawa, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH   468   557 - 561   2017.6

Ab initio model for GaAs1%xNx chemical beam epitaxy using GaAs(100) surface stability over As2, H2, and N2 Reviewed International journal

Hubert Valencia, Yoshihiro Kangawa, Koichi Kakimoto

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes   56 ( 6 )   060306-1 - 3   2017.6

First-principles and thermodynamic analysis of trimethylgallium (TMG) decomposition during MOVPE growth of GaN Reviewed International journal

K. Sekiguchi, H. Shirakawa, Y. Yamamoto, M. Araidai, Y. Kangawa, K. Kakimoto, K. Shiraishi

JOURNAL OF CRYSTAL GROWTH   468   950 - 953   2017.6

Thermodynamic considerations of the vapor phase reactions in III-nitride metal organic vapor phase epitaxy Reviewed International journal

K. Sekiguchi, H. Shirakawa, K. Chokawa, M. Araidai, Y. Kangawa, K. Kakimoto, K.Shiraishi

JAPANESE JOURNAL OF APPLIED PHYSICS   56 ( 4 )   04CJ04-1 - 4   2017.4

Improved thermodynamic analysis of gas reactions for compound semiconductor growth by vapor-phase epitaxy Reviewed International journal

Yuya Inatomi, Yoshihiro Kangawa, Koichi Kakimoto, Akinori Koukitu

Japanese Journal of Applied Physics   56 ( 3 )   038002-1 - 3   2017.3

Thermodynamic foundations of applications of Ab initio methods for determination of the adsorbate equilibria: Hydrogen at the GaN(0001) surface Reviewed International journal

Physical Chemistry Chemical Physics   19 ( 43 )   29676 - 29684   2017.1

Advances in modeling semiconductor epitaxy: Contributions of growth orientation and surface reconstruction to InN metalorganic vapor phase epitaxy Reviewed International journal

A. Kusaba, Y. Kangawa, P. Kempisty, K. Kakimoto, A. Koukitu

APPLIED PHYSICS EXPRESS   9 ( 12 )   125601-1 - 4   2016.12

Theoretical approach to surface reconstruction of InN(0001) during raised-pressure metalorganic vapor-phase epitaxy Reviewed International journal

Akira Kusaba, Yoshihiro Kangawa, Yoshio Honda, Hiroshi Amano, Koichi Kakimoto

Japanese Journal of Applied Physics   55 ( 5 )   05FM01-1 - 4   2016.5

Strain energy analysis of screw dislocations in 4H-SiC by molecular dynamics Reviewed International journal

Takahiro Kawamura, Mitsutoshi Mizutani, Yasuyuki Suzuki, Yoshihiro Kangawa, Koichi Kakimoto

Japanese Journal of Applied Physics   55 ( 3 )   031301-1 - 5   2016.3

Ab initio study of GaAs(100) surface stability over AS(2), H-2 and N-2 as a model for vapor-phase epitaxy of GaAs1-xNx Reviewed International journal

H. Valencia, Y. Kangawa, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH   432   6 - 14   2015.12

Structural and optical properties of AlN grown by solid source solution growth method Reviewed International journal

Y. Kangawa, H. Suetsugu, M. Knetzger, E. Meissner, K. Hazu, S. F. Chichibu, T. Kajiwara, S. Tanaka, Y. Iwasaki, K. Kakimoto

JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 8 )   085501-1 - 5   2015.8

Real-time observation system development for high-temperature liquid/solid interfaces and its application to solid-source solution growth of AlN Reviewed International journal

Y. Kangawa, A. Kusaba, H. Sumiyoshi, H. Miyake, M. Bockowski, K. Kakimoto

APPLIED PHYSICS EXPRESS   8 ( 6 )   065601-1 - 3   2015.6

Role of the Surface N-H Molecular Layer in High Quality In-RICH InGaN Growth by MOVPE Reviewed International journal

T. Yayama, Y. Kangawa, K. Kakimoto

JOURNAL OF CHEMICAL ENGINEERING OF JAPAN   47 ( 7 )   2014.7

Molecular dynamics simulation of graphene growth by surface decomposition of 6H-SiC(0001) and (000(1)over-bar) Reviewed International journal

R. Iguchi, T. Kawamura, Y. Suzuki, M. Inoue, Y. Kangawa, K. Kakimoto

JAPANESE JOURNAL OF APPLIED PHYSICS   53 ( 6 )   065601-1 - 4   2014.6

Molecular beam epitaxy growth of GaN under Ga-rich conditions investigated by molecular dynamics simulation Reviewed International journal

T. Kawamura, H. Hayashi, T. Miki, Y. Suzuki, Y. Kangawa, K. Kakimoto

JAPANESE JOURNAL OF APPLIED PHYSICS   53 ( 5 )   05FL08-1 - 5   2014.5

First principles approach to C aggregation process during 0th graphene growth on SiC (0001) Reviewed International journal

M. Inoue, H. Kageshima, Y. Kangawa, K. Kakimoto

AIP Conf. Proc.   1566   129 - 130   2013.12

InSb Mid-Infrared Photon Detector for Room-Temperature Operation Reviewed International journal

Koichi Ueno, Edson Gomes Camargo, Takashi Katsumata, Hiromasa Goto, Naohiro Kuze, Yoshihiro KANGAWA, Koichi Kakimoto

JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 9 )   092202-1 - 092202-6   2013.9

Theoretical Investigation of the Effect of Growth Orientation on Indium Incorporation Efficiency during InGaN Thin Film Growth by Metal-Organic Vapor Phase Epitaxy Reviewed International journal

Tomoe Yayama, Yoshihiro KANGAWA, Koichi Kakimoto

JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 8 )   08JC02-1 - 08JC02-3   2013.8

Numerical Analysis of the Dislocation Density in Multicrystalline Silicon for Solar Cells by the Vertical Bridgman Process Reviewed International journal

Makoto Inoue, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, BING GAO, Yoshihiro KANGAWA, Koichi Kakimoto

INTERNATIONAL JOURNAL OF PHOTOENERGY   706923   2013.6

Thermodynamic Analysis of Coherently Grown GaAsN/Ge: Effects of Different Gaseous Sources Reviewed International journal

J. Kawano, Y. Kangawa, T. Yayama, K. Kakimoto, A. Koukitu

JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 4 )   045601-1 - 045601-5   2013.4

First principles approach to C aggregation process during 0th graphene growth on SiC(0001) Reviewed International journal

Masato Inoue, Hiroyuki Kageshima, Yoshihiro Kangawa, Koichi Kakimoto

31st International Conference on the Physics of Semiconductors, ICPS 2012 Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012   1566   129 - 130   2013.1

N Substitution in GaAs(001) Surface under an Atmosphere of Hydrogen Reviewed International journal

J. Kawano, Y. Kangawa, K. Kakimoto

JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 10 )   10ND17-1 - 10ND17-4   2012.10

First-principles calculation of 0th-layer graphene-like growth of C on SiC(0001) Reviewed International journal

M. Inoue, H. Kageshima, Y. Kangawa, K. Kakimoto

PHYSICAL REVIEW B   86 ( 8 )   085417-1 - 085417-7   2012.8

Thermodynamical analysis of polytype stability during PVT growth of SiC using 2D nucleation theory Reviewed International journal

T. Shiramomo, B. Gao, F. Mercier, S. Nishizawa, Y. Kangawa, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH   352 ( 1 )   2012.8

Molecular dynamics simulation of diffusion behavior of N atoms on the growth surface in GaN solution growth Reviewed International journal

T. Kawamura, Y. Kangawa, K. Kakimoto, Y. Suzuki

JOURNAL OF CRYSTAL GROWTH   351 ( 1 )   2012.7

Thermodynamic analysis of vapor-phase epitaxial growth of GaAsN on Ge Reviewed International journal

J. Kawano, Y. Kangawa, T. Ito, K. Kakimoto, A. Koukitu

JOURNAL OF CRYSTAL GROWTH   343 ( 1 )   2012.3

Investigation of GaN Solution Growth Processes on Ga- and N-Faces by Molecular Dynamics Simulation Reviewed International journal

T. Kawamura, Y. Kangawa, K. Kakimoto, S. Kotake, Y. Suzuki

JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 1 )   01AF06-1 - 01AF06-4   2012.1

固体原料を用いたAlN溶液成長法に関する研究 Invited Reviewed

寒川 義裕, B. M. Eelbaum, 桑野範之, 柿本 浩一

日本結晶成長学会誌   38   2011.12

Thermodynamic analysis for the prediction of N composition in coherently grown GaAsN for a multi-junction solar cell Reviewed International journal

Jun Kawano, Yoshihiro Kangawa, Tomoe Yayama, Tomonori Ito, Koichi Kakimoto, Akinori Koukitu

37th IEEE Photovoltaic Specialists Conference, PVSC 2011, Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011   496 - 500   2011.12

Microstructure of Bulk AlN Grown by A New Solution Growth Method Reviewed International journal

Y. Kangawa, N. Kuwano, B. M. Epelbaum, K. Kakimoto

JAPANESE JOURNAL OF APPLIED PHYSICS   50 ( 12 )   120202-1 - 120202-3   2011.12

Novel Solution Growth Method of Bulk AlN Using Al and Li3N Solid Sources Reviewed International journal

Yoshihiro KANGAWA, Ryutaro Toki, Tomoe Yayama, Boris M. Epelbaum, Koichi Kakimoto

APPLIED PHYSICS EXPRESS   4 ( 9 )   095501-1 - 095501-3   2011.9

Calculation of phase diagrams of the Li3N-Al system for AlN growth Reviewed International journal

T. Yayama, Yoshihiro KANGAWA, Koichi Kakimoto

PHYSICA STATUS SOLIDI C   8 ( 5 )   1581 - 1584   2011.5

Tight-Binding Approach to Initial Stage of the Graphitization Process on a Vicinal SiC Surface Reviewed International journal

M. Inoue, Yoshihiro KANGAWA, K. Wakabayashi, H. Kageshima, Koichi Kakimoto

JAPANESE JOURNAL OF APPLIED PHYSICS   50 ( 3 )   038003-1 - 038003-2   2011.3

半導体バルク結晶成長における熱と物質の輸送と成長速度との関係 Invited Reviewed

柿本浩一、Gao Bing、中野　智、寒川義裕

日本結晶成長学会誌   38   2011.1

GaAsN気相エピキタシーにおける混晶組成の理論的検討 Invited Reviewed

川野　潤、寒川義裕、屋山　巴、伊藤智徳、柿本浩一、纐纈明伯

日本結晶成長学会誌   38   2011.1

Possibility of AlN growth using Li-Al-N solvent Reviewed International journal

Y. Kangawa, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH   312 ( 18 )   2010.9

Theoretical analyses of In incorporation and compositional instability in coherently grown InGaN thin films Reviewed International journal

T. Yayama, Y. Kangawa, K. Kakimoto, A. Koukitu

PHYSICA STATUS SOLIDI C   7 ( 7-8 )   2249 - 2251   2010.7

AlN synthesis on AlN/SiC template using Li-Al-N solvent Reviewed International journal

Y. Kangawa, K. Kakimoto

PHYSICA STATUS SOLIDI A   207 ( 6 )   2010.6

Distributions of light elements and their precipitations grown by unidirectional solidification method in multicrystalline silicon for solar cells Reviewed International journal

H. Matsuo, S. Hisamatsu, Yoshihiro Kangawa, Koichi Kakimoto

ISTC/CSTIC 2009 (CISTC), ECS Transactions - ISTC/CSTIC 2009 (CISTC)   18   1037 - 1042   2009.12

Heat and impurity transfer mechanisms of Czochralski and directional solidification processes Reviewed International journal

Koichi Kakimoto, X. J. Chen, L. J. Liu, H. Miyazawa, H. Matsuo, S. Nakano, S. Hisamatsu, Yoshihiro Kangawa

ISTC/CSTIC 2009 (CISTC), ECS Transactions - ISTC/CSTIC 2009 (CISTC)   925 - 933   2009.12

Numerical Analysis of mc-Si Crystal Growth Reviewed International journal

K. Kakimoto, H. Matsuo, S. Hisamatsu, B. Ganesh, B. Gao, X. J. Chen, L. J. Liu, Y. Kangawa

Solid State Phenomena   156-158   2009.10

Method for Theoretical Prediction of Indium Composition in Coherently Grown InGaN Thin Films Reviewed International journal

T. Yayama, Y. Kangawa, K. Kakimoto, A. Koukitu

JAPANESE JOURNAL OF APPLIED PHYSICS   48 ( 8 )   088004 - 088005   2009.8

Influence of compositional changes of source materials on AlN synthesis using Li-Al-N solvent Reviewed International journal

T. Nagano, Y. Kangawa, K. Kakimoto

PHYSICA STATUS SOLIDI C   6   2009.6

Theoretical approach to structural stability of GaN: How to grow cubic GaN Reviewed International journal

Yoshihiro Kangawa, T. Akiyama, T. Ito, K. Shiraishi, Koichi Kakimoto

Journal of Crystal Growth   311 ( 10 )   3106 - 3109   2009.5

Possibility of AlN vapor phase epitaxy using Li(3)N as a nitrogen source Reviewed International journal

Y. Kangawa, T. Nagano, K. Kakimoto

PHYSICA STATUS SOLIDI C   6   2009.1

Numerical analysis of Mc-Si crystal growth Reviewed International journal

Koichi Kakimoto, Hitoshi Matsuo, Syo Hisamatsu, Birava Ganesh, Gao Bing, X. J. Chen, Lijun Liu, Hiroaki Miyazawa, Yoshihiro Kangawa

13th International Autumn Meeting - Gettering and Defect Engineering in Semiconductor Technology, GADEST 2009, Gettering and Defect Engineering in Semiconductor Technology XIII, GADEST 2009   193 - 198   2009.1

Monte Carlo simulation of atomic arrangement in InGaN thin film grown by MOVPE Reviewed International journal

Y. Kangawa, K. Kakimoto, T. Ito, A. Koukitu

JOURNAL OF CRYSTAL GROWTH   311 ( 3 )   2009.1

Distribution of Light Elements in Multicrystalline Silicon for Solar Cells Grown by Directional Solidification Reviewed International journal

H. Matsuo, S. Hisamatsu, Y. Kangawa, K. Kakimoto

JOURNAL OF THE ELECTROCHEMICAL SOCIETY   156 ( 9 )   2009.1

Thermal Conductivity of SiC Calculated by Molecular Dynamics Reviewed International journal

T. Kawamura, D. Hori, Y. Kangawa, K. Kakimoto, M. Yoshimura, Y. Mori

JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 12 )   8898 - 8901   2008.12

Thermodynamical analysis of oxygen incorporation from a quartz crucible during solidification of multicrystalline silicon for solar cell Reviewed International journal

H. Matsuo, R. B. Ganesh, S. Nakano, L. J. Liu, Y. Kangawa, K. Arafune, Y. Oshita, M. Yamaguchi, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH   310 ( 22 )   4666 - 4671   2008.11

Directional solidification of multicrystalline silicon using the accelerated crucible rotation technique Reviewed International journal

R. B. Ganesh, H. Matsuo, Y. Kangawa, K. Arafune, Y. Ohshita, M. Yamaguchi, K. Kakimoto

CRYSTAL GROWTH & DESIGN   8 ( 7 )   2008.7

Estimation of growth rate in unidirectionally solidified multicrystalline silicon by the growth-induced striation method Reviewed International journal

R. B. Ganesh, H. Matsuo, T. Kawamura, Y. Kangawa, K. Arafune, Y. Ohshita, M. Yamaguchi, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH   310 ( 11 )   2697 - 2701   2008.5

Synthesis of AlN from Li3N and Al: Application to vapor phase epitaxy Reviewed International journal

T. Wakigawa, T. Nagano, Y. Kangawa, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH   310 ( 11 )   2827 - 2831   2008.5

Investigation of the thermal conductivity of a fullerene peapod by molecular dynamics simulation Reviewed International journal

T. Kawamura, Y. Kangawa, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH   310 ( 7-9 )   2008.4

Global analysis of GaN growth using a solution technique Reviewed International journal

D. Kashiwagi, R. Gejo, Y. Kangawa, L. J. Liu, F. Kawamura, Y. Mori, T. Sasaki, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH   310 ( 7-9 )   2008.4

Numerical investigation of crystal growth process of bulk Si and nitrides - A review Invited Reviewed International journal

Koichi Kakimoto, L. Liu, H. Miyazawa, S. Nakano, D. Kashiwagi, X. J. Chen, Yoshihiro Kangawa

Crystal Research and Technology   42 ( 12 )   1185 - 1189   2007.12

c-GaN分子線エピタキシーにおける成長初期過程の理論解析 Invited Reviewed

寒川 義裕, 松尾有里子, 秋山亨, 伊藤智徳, 白石賢二, 柿本 浩一

クリスタルレターズ   36   2007.9

Possibility of AlN solution growth using Al and Li3N Reviewed International journal

Y. Kangawa, T. Wakigawa, K. Kakimoto

JAPANESE JOURNAL OF APPLIED PHYSICS   46 ( 9A )   2007.9

Numerical study of the relationship between growth condition and atomic arrangement of InGaN Reviewed International journal

Y. Kangawa, K. Kakimoto, T. Ito, A. Koukitu

PHYSICA STATUS SOLIDI B   244 ( 6 )   2007.6

Molecular dynamics simulation of thermal conductivity of GaN/AlN quantum dot superlattices Reviewed International journal

T. Kawamura, Y. Kangawa, K. Kakimoto

Physica Status Solidi C   4 ( 7 )   2007.6

InGaN混晶半導体における原子配列の理論的検討 Invited Reviewed

寒川義裕・柿本浩一・伊藤智徳・纐纈明伯

応用物理   2007.5

Ab initio-based approach on initial growth kinetics of GaN on GaN (001) Reviewed International journal

Y. Kangawa, Y. Matsuo, T. Akiyama, T. Ito, K. Shiraishi, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH   301   2007.4

Theoretical approach to initial growth kinetics of GaN on GaN(001) Reviewed International journal

Y. Kangawa, Y. Matsuo, T. Akiyama, T. Ito, K. Shiraishi, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH   300 ( 1 )   2007.3

Influence of hydrogen coverage on Si(1 1 1) substrate on the growth of GaN buffer layer Reviewed International journal

Yuriko Matsuo, Yoshihiro Kangawa, Rie Togashi, Koichi Kakimoto, Akinori Koukitu

Journal of Crystal Growth   300 ( 1 )   66 - 69   2007.3

Analysis of compositional instability of InGaN by Monte Carlo simulation Reviewed International journal

Y. Kangawa, K. Kakimoto, T. Ito, A. Koukitu

JOURNAL OF CRYSTAL GROWTH   298   2007.1

An investigation of thermal conductivity of nitride-semiconductor nanostructures by molecular dynamics simulation Reviewed International journal

Takahiro Kawamura, Yoshihiro Kangawa, Koichi Kakimoto

Journal of Crystal Growth   298 ( SPEC. ISS )   251 - 253   2007.1

Thermodynamic stability of In1-x-yGaxAlyN on GaN and InN Reviewed International journal

Y. Kangawa, K. Kakimoto, T. Ito, A. Koukitu

Physica Status Solidi C   3 ( 6 )   2006.6

Investigation of thermal conductivity of nitride mixed crystals and superlattices by molecular dynamics Reviewed International journal

T. Kawamura, Y. Kangawa, K. Kakimoto

Physica Status Solidi C   3 ( 6 )   2006.6

Growth of GaN directly on Si(111) substrate by controlling atomic configuration of Si surface by metalorganic vapor phase epitaxy Reviewed International journal

K. Takemoto, H. Murakami, T. Iwamoto, Y. Matsuo, Y. Kangawa, Y. Kumagai, A. Koukitu

JAPANESE JOURNAL OF APPLIED PHYSICS   45 ( 17-19 )   2006.5

Enhancement of the diffusion of oxygen and boron in silicon crystals under irradiation of infrared laser light Reviewed International journal

L. J. Liu, K. Tanahashi, H. Yamada-Kaneta, Y. Kangawa, K. Kakimoto

JOURNAL OF APPLIED PHYSICS   99 ( 7 )   073103-1 - 073103-4   2006.4

MBE growth of a novel chalcopyrite-type ternary compound MnGeP2 Reviewed International journal

K. Sato, T. Ishibashi, K. Minami, H. Yuasa, J. Jogo, T. Nagatsuka, A. Mizusawa, Y. Kangawa, A. Koukitu

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS   66 ( 11 )   2005.11

Investigation of thermal conductivity of GaN by molecular dynamics Reviewed International journal

T. Kawamura, Y. Kangawa, K. Kakimoto

JOURNAL OF CRYSTAL GROWTH   284 ( 1-2 )   197 - 202   2005.10

Thermodynamic analysis of AlGaN HVPE growth Reviewed International journal

Akinori Koukitu, Jun Kikuchi, Yoshihiro Kangawa, Yoshinao Kumagai

The Internbational Workshop on Bulk Nitride Semiconductors III Journal of Crystal Growth   281 ( 1 )   47 - 54   2005.7

Growth of MnGeP₂ thin films by molecular beam epitaxy Reviewed International journal

Kazuyuki Minami, Jumpei Jogo, Valery Smirnov, Hideki Yuasa, Toshikazu Nagatsuka, Takayuki Ishibashi, Yoshitaka Morishita, Yuriko Matsuo, Yoshihiro Kangawa, Akinori Koukitu, Katsuaki Sato

Japanese Journal of Applied Physics, Part 2: Letters   44 ( 8-11 )   L265 - L267   2005.6

MnGeP2 thin films grown by molecular beam epitaxy Reviewed International journal

T. Ishibashi, K. Minami, J. Jogo, T. Nagatsuka, H. Yuasa, V. Smirnov, Y. Kangawa, A. Koukitu, K. Sato

JOURNAL OF SUPERCONDUCTIVITY   18 ( 1 )   2005.2

GaN growth process using GaP(111)A and (111)B surfaces as an initial substrate Reviewed International journal

Y. Matsuo, N. Kawaguchi, M. Fujino, Y. Kangawa, Y. Kumagai, T. Irisawa, A. Koukitu

JOURNAL OF CRYSTAL GROWTH   275 ( 1-2 )   2005.2

Impact of crystallization manner of the buffer layer on the crystalline quality of GaN epitaxial layers on GaAs (111)A substrate Reviewed International journal

H. Murakami, N. Kawaguchi, Y. Kangawa, Y. Kumagai, A. Koukitu

JOURNAL OF CRYSTAL GROWTH   275 ( 1-2 )   2005.2

化合物半導体気相成長の熱力学 Reviewed

纐纈 明伯、寒川 義裕、熊谷 義直、関 壽

応用物理   2005.1

Growth of thick AlN layer on sapphire (0001) substrate using hydride vapor phase epitaxy Reviewed International journal

T. Yamane, H. Murakami, Y. Kangawa, Y. Kumagai, A. Koukitu

Physica Status Solidi C   2 ( 7 )   2005.1

Growth and characterization of thick GaN layers with high Fe doping Reviewed International journal

Y. Kumagai, H. Murakami, Y. Kangawa, A. Koukitu

Physica Status Solidi C   2 ( 7 )   2005.1

Influence of laser power on crystalline quality of InGaN with high indium content grown by pulse laser-assisted MOVPE Reviewed International journal

Yoshihiro Kangawa, Norihito Kawaguchi, Yoshinao Kumagai, Akinori Koukitu

Journal of Crystal Growth   272 ( 1-4 SPEC. ISS. )   444 - 448   2004.12

Thermodynamic analysis of InN and In_xGa_1-xN MOVPE using various nitrogen sources Reviewed International journal

Yoshinao Kumagai, Jun Kikuchi, Yuriko Matsuo, Yoshihiro Kangawa, Ken Tanaka, Akinori Koukitu

Journal of Crystal Growth   272 ( 1-4 SPEC. ISS. )   341 - 347   2004.12

Systematic theoretical investigations of adsorption behavior on the GaAs(0 0 l)-c(4 × 4) surfaces Reviewed International journal

237 ( 1-4 )   194 - 199   2004.10

Theoretical investigations of adatom behavior on non-planar surfaces with GaAs(n 1 1)A Reviewed International journal

Koichi Asano, Yoshihiro Kangawa, Hirotoshi Ishizaki, Toru Akiyama, Kohji Nakamura, Tomononori Ito

Applied Surface Science   237 ( 1-4 )   206 - 212   2004.10

Pulse laser assisted MOVPE for InGaN with high indium content Reviewed International journal

Norihito Kawaguchi, Ken Nosuke Hida, Yoshihiro Kangawa, Yoshinao Kumagai, Akinori Koukitu

Physica Status Solidi (A) Applied Research   201 ( 12 )   2846 - 2849   2004.9

Study of pulse laser assisted metalorganic vapor phase epitaxy of InGaN with large indium mole fraction Reviewed International journal

Yoshihiro Kangawa, Norihito Kawaguchi, Ken Nosuke Hida, Yoshinao Kumagai, Akinori Koukitu

Japanese Journal of Applied Physics, Part 2: Letters   43 ( 8A )   L1026 - L1028   2004.8

Trade-off between thickness and temperature ramping rate of GaN buffer layer studied for high quality GaN growth on GaAs (1 1 1)A substrate Reviewed International journal

Hisashi Murakami, Yoshihiro Kangawa, Yoshinao Kumagai, Akinori Koukitu

Journal of Crystal Growth   268 ( 1-2 )   1 - 7   2004.7

IV族混晶半導体の熱力学的安定性 Reviewed

伊藤智徳、寒川義裕

日本結晶成長学会誌   2004.1

Hydride vapor phase epitaxy of AlN: Thermodynamic analysis of aluminum source and its application to growth Reviewed International journal

Y. Kumagai, T. Yamane, T. Miyaji, H. Murakami, Yoshihiro Kangawa, A. Koukitu

5th International Conference on Nitride Semiconductors, ICNS 2003, Physica Status Solidi C: Conferences   ( 7 )   2498 - 2501   2003.12

Superlattice stacking structure in InGaN thin film pseudomorphic to GaN (0001) substrate: Semigrand canonical Monte Carlo simulation Reviewed International journal

Atsushi Mori, Tomonori Ito, Yoshihiro Kangawa, Akinori Koukitu

5th International Conference on Nitride Semiconductors, ICNS 2003, Physica Status Solidi C: Conferences   ( 7 )   2486 - 2489   2003.12

Influence of lattice constraint from InN and GaN substrate on relationship between input mole ratio and solid composition of InGaN during MOVPE Reviewed International journal

Yoshihiro Kangawa, T. Ito, Y. Kumagai, A. Koukitu

5th International Conference on Nitride Semiconductors, ICNS 2003 Physica Status Solidi C: Conferences   ( 7 )   2575 - 2579   2003.12

Improvements in crystalline quality of thick GaN layers on GaAs (111)A by periodic insertion of low-temperature GaN buffer layers Reviewed International journal

H. Murakami, N. Kawaguchi, Yoshihiro Kangawa, Y. Kumagai, A. Koukitu

5th International Conference on Nitride Semiconductors, ICNS 2003 Physica Status Solidi C: Conferences   ( 7 )   2141 - 2144   2003.12

An empirical potential approach to structural stability of GaN_xAs<>sub1-x#DR Reviewed International journal

Takashi Suda, Yoshihiro Kangawa, Kohji Nakamura, Tomonori Ito

Journal of Crystal Growth   258 ( 3-4 )   277 - 282   2003.11

Semigrand canonical Monte Carlo simulation with the Gibbs-Duhem integration technique: Formulation for alloy phase diagrams and attempt on In_xGa_1-xN/GaN Reviewed International journal

A. Mori, B. B. Laird, Yoshihiro Kangawa, T. Ito, A. Koukitu

Russian Journal of Physical Chemistry A   77 ( SUPPL. 1 )   S21   2003.7

Effect of Ni-Cu substrates on phase selection of hexagonal and cubic boron nitride thin films Reviewed International journal

Shigeo Kotake, Takaya Hasegawa, Kazutaka Kamiya, Yasuyuki Suzuki, Takami Masui, Yoshihiro Kangawa, Kohji Nakamura, Tomonori Ito

Applied Surface Science   216 ( 1-4 SPEC. )   72 - 77   2003.6

Thermodynamic study on compositional instability of InGaN/GaN and InGaN/InN during MBE Reviewed International journal

Yoshihiro Kangawa, Tomonori Ito, Yoshinao Kumagai, Akinori Koukitu

Applied Surface Science   216 ( 1-4 SPEC. )   453 - 457   2003.6

Systematic theoretical investigations of miscibility in Si_1-x-yGe_xC_y thin films Reviewed International journal

Tomonori Ito, Kohji Nakamura, Yoshihiro Kangawa, Kenji Shiraishi, Akihito Taguchi, Hiroyuki Kageshima

Applied Surface Science   216 ( 1-4 SPEC. )   458 - 462   2003.6

High temperature ramping rate for GaAs (111)A substrate covered with a thin GaN buffer layer for thick GaN growth at 1000°C Reviewed International journal

42 ( 5B )   L526 - L528   2003.5

Theoretical investigation of arsenic desorption from GaAs(001) surfaces under an atmosphere of hydrogen Reviewed International journal

Yuriko Matsuo, Yoshihiro Kangawa, Yoshinao Kumagai, Toshiharu Irisawa, Akinori Koukitu

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes   42 ( 5 A )   2578 - 2581   2003.5

Semigrand canonical Monte Carlo simulation with Gibbs-Duhem integration technique for alloy phase diagrams Reviewed International journal

Atsushi Mori, Brian B. Laird, Yoshihiro Kangawa, Tomonori Ito, Akinori Koukitu

Materials Physics and Mechanics   6 ( 1 )   49 - 57   2003.3

Influence of lattice constraint from InN and GaN substrate on relationship between solid composition of In_xGa_1-xN film and input mole ratio during molecular beam epitaxy Reviewed International journal

Yoshihiro Kangawa, Tomonori Ito, Yoshinao Kumagai, Akinori Koukitu, Norihito Kawaguchi

Japanese Journal of Applied Physics, Part 2: Letters   42 ( 2 A )   L95 - L98   2003.2

GaAs表面構造の安定性に対する量子論的アプローチ Invited Reviewed

寒川義裕，伊藤智徳，白石賢二，大鉢忠，纐纈明伯

表面科学   2003.1

Improvements in crystalline quality of thick GaN layers on GaAs(111)A by periodic insertion of low-temperature GaN buffer layers Reviewed International journal

H. Murakami, N. Kawaguchi, Y. Kangawa, Y. Kumagai and A. Koukitu

Phys. Stat. Sol. (c)   2003.1

Influence of lattice constraint from InN and GaN substrate on relationship between input mole ratio and solid composition of InGaN during MOVPE Reviewed International journal

Y. Kangawa, T. Ito, Y. Kumagai and A. Koukitu

Phys. Stat. Sol. (c)   2003.1

InGaN気相成長における気相-固相関係に対する基板拘束の影響 Reviewed

寒川義裕，伊藤智徳，熊谷義直，纐纈明伯

日本結晶成長学会誌   2003.1

Theoretical approach to influence of As₂ pressure on GaAs growth kinetics Reviewed International journal

Yoshihiro Kangawa, T. Ito, Y. S. Hiraoka, A. Taguchi, K. Shiraishi, T. Ohachi

Surface Science   507-510   285 - 289   2002.6

Monte Carlo simulation for temperature dependence of Ga diffusion length on GaAs(0 0 1) Reviewed International journal

Yoshihiro Kangawa, T. Ito, A. Taguchi, K. Shiraishi, T. Irisawa, T. Ohachi

Applied Surface Science   190 ( 1-4 )   517 - 520   2002.5

An empirical potential approach to wurtzite-zinc blende structural stability of semiconductors Reviewed International journal

Tomonori Ito, Yoshihiro Kangawa

Journal of Crystal Growth   235 ( 1-4 )   149 - 153   2002.2

Empirical interatomic potential calculations for relative stability of Ga adatom on GaAs(1 0 0) and (n11)A surfaces Reviewed International journal

Yoshihiro Kangawa, T. Ito, A. Taguchi, K. Shiraishi, T. Ohachi

Journal of Crystal Growth   237-239 ( 1 4 I )   223 - 226   2002.1

Theoretical investigations of thermodynamic stability for Si_1-x-yGe_xC_y Reviewed International journal

Tomonori Ito, Yoshihiro Kangawa

Journal of Crystal Growth   237-239 ( 1 4I )   116 - 120   2002.1

A new theoretical approach to adsorption-desorption behavior of Ga on GaAs surfaces Reviewed International journal

Yoshihiro Kangawa, T. Ito, A. Taguchi, K. Shiraishi, T. Ohachi

Surface Science   493 ( 1-3 )   178 - 181   2001.11

Theoretical investigations of adatom adsorptions on the As-stabilized GaAs(1 1 1)A surface Reviewed International journal

A. Taguchi, K. Shiraishi, T. Ito, Yoshihiro Kangawa

Surface Science   493 ( 1-3 )   173 - 177   2001.11

Formation mechanism of Al-segregated region in InAlAs/(110)InP Reviewed International journal

Y. Kangawa, K. Wakizono, N. Kuwano, K. Oki, T. Ito

J. Cryst. Growth   229 ( 1 )   164 - 168   2001.1

Empirical Interatomic potential calculation for compositional instability of III-V nitride alloys in lattice mismatch systems Reviewed International journal

Y. Kangawa, T. Ito, A. Mori, A. Koukitu

Proc. Int. Workshop on Nitride Semiconductors   2000.1

Anomalous behavior of excess energy curves of In_xGa_1-xN grown on GaN and InN Reviewed International journal

Yoshihiro Kangawa, T. Ito, A. Mori, A. Koukitu

Journal of Crystal Growth   220 ( 4 )   401 - 404   2000.1

Numerical calculation with empirical interatomic potential for formation mechanism of CuAu-I type ordered structure in InGaAs/(110)InP Reviewed International journal

Y. Kangawa, N. Kuwano, K. Oki, T. Ito

Appl. Surf. Sci.   159   368 - 373   2000.1

A new empirical interatomic potential for compound semiconductors and its application to thermodynamic stability Reviewed International journal

Y. Kangawa and T. Ito

Proc. 27th International Symposium on Compound Semiconductors   2000.1

原子間ポテンシャルを用いたInGaAs/(110)InP混晶中に出現するCuAu-I型規則構造形成機構の理論的解析 Reviewed

寒川義裕、桑野範之、沖憲典、伊藤智徳

日本金属学会誌   1999.1

Theoretical investigation for the formation mechanism of CuAu-I type ordered structure in InGaAs/(110)InP alloy semiconductor using an empirical interatomic potential Reviewed

Yoshihiro Kangawa, Noriyuki Kuwano, Kensuke Oki, Tomonori Ito

63 ( 6 )   741 - 746   1999.1

Formation mechanism of antiphase boundary structure in molecular beam epitaxy grown InGaAs/(110)InP Reviewed International journal

Y. Kangawa, N. Kuwano, K. Oki

Jpn. J. Appl. Phys.   38 ( 1A )   40 - 41   1999.1

Numerical calculation with empirical interatomic potential for ordering mechanism of InGaAs/(110)InP Reviewed International journal

Y. Kangawa, M. Suenaga, N. Kuwano, K. Oki

661 - 664   1999.1

第3編、第3章； 固体ソース溶液成長法～AlN単結晶成膜を事例として～

寒川 義裕（ Role： Joint author）

(株)NTS  2013.6 

半導体材料開発の新機軸～プロセス・インフォマティクス～ Invited

@寒川義裕

ワイドギャップ半導体学会第8回研究会  2022.10 

第一原理計算によるGaN の極性反転界面構造の解析

河村貴宏, 秋山亨, 三宅秀人, 寒川義裕, 池田和久, 谷川智之

第85回応用物理学会秋季学術講演会  2024.9 

Determination of Local Electron Counting Rule Satisfaction by SAT Solver International conference

Akira Kusaba, Tetsuji Kuboyama, Yoshihiro Kangawa

The 9th Asian Conference on Crystal Growth and Crystal Technology (CGCT-9)  2024.6 

結晶成長プロセスインフォマティクス Invited

寒川義裕

第７回結晶成⻑基礎セミナー： 化合物半導体のエピタキシャル成⻑〜基礎理論から産業分野への展開  2024.6 

KPZカイネティック・ラフニングとしての2次元多数核成長

阿久津典子, 寒川義裕

第16回ナノ構造・エピタキシャル成長講演会  2024.5 

Electronic structures of κ Ga2O3/Al2O3 superlattices International conference

2024.4 

Vacancies in III-Nitrides (II): Diffusion near Hetero Interfaces International conference

R. Shimauchi, Y. Kangawa, A. Kusaba

10th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA 2024)  2024.4 

Vacancies in III-Nitrides (I): Formation under Reconstructed Surfaces International conference

K. Tateyama, Y. Kangawa, A. Kusaba, T. Kawamura

10th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA 2024)  2024.4 

First-Principles Calculations of Bandgap Control of κ-Ga2O3 by Uniaxial Strain International conference

2024.4 

窒化ガリウム中におけるVGa-VN周りの欠陥反応解析

中村城太、小田将人、寒川義裕

第71回応用物理学会春季学術講演会  2024.3 

化学気相成長におけるプロセスインフォマティクス〜現状と将来展望〜 Invited

寒川義裕

（独）日本学術振興会 R031ハイブリッド量子ナノ技術委員会第15回研究会（特別企画）「AIと科学技術・社会」  2024.3 

III族窒化物MOVPEにおける表面再構成と点欠陥安定性の相関解析 Invited

寒川義裕

一般社団法人GaNコンソーシアム2023年度結晶・評価WG研究会（第1回）  2023.12 

Ab initio thermodynamic study of the metallic surface wetting layer during MBE (In)GaN growth and its consequences for dopants incorporation International conference

Pawel Kempisty, Karol Kawka, Akira Kusaba, Yoshihiro Kangawa

The 14th International Conference on Nitride Semiconductors  2023.11 

Computational investigation of GaN growth for power electronics applications International conference

Kana Ishisone, Mauro Boero, Kieu My Bui, Atsushi Oshiyama, Yoshihiro Kangawa, Kenji Shiraishi

The 14th International Conference on Nitride Semiconductors  2023.11 

Adiabatic potential for conformational change of VGa-VN complex defects in GaN International conference

Jota Nakamura, Masato Oda, Yoshihiro Kangawa

The 14th International Conference on Nitride Semiconductors  2023.11 

First-principles calculations on the decomposition reaction pathway of trimethylindium in InN MOVPE International conference

Yuya Nagashima, Hirotaka Watanabe, Syugo Nitta, Akira Kusaba, Yoshihiro Kangawa, Kenji Shiraishi

The 14th International Conference on Nitride Semiconductors  2023.11 

A numerical study of UV AlGaN heterostructures with polarization doping International conference

Konrad Sakowski, Ashfaq Ahmad, Pawel Strak, Pawel Kempisty, Yoshihiro Kangawa, Jacek Piechota, Stanislaw Krukowski

The 14th International Conference on Nitride Semiconductors  2023.11 

Correlation between Surface Reconstruction and Impurity Incorporation in III-Nitride MOCVD: Surface Phase Diagram

K. Tateyama, F. Kihara, A. Kusaba, Y. Kangawa, T. Kawamura

The 42nd Electronic Materials Symposium (EMS-42)  2023.10 

First-principles calculation of band structure of alpha-Ga2O3/Al2O3 superlattices International conference

T. Kawamura, T. Akiyama, Y. Kangawa

The 20th International Conference on Crystal Growth and Epitaxy  2023.7 

Theoretical exploration of widegap materials with the corundum structure for heteroepitaxy on alpha−Ga2O3 International conference

2023.7 

スパッタAlN膜の高温アニールプロセスにおけるスパースモデリング

原太一、草場彰、寒川義裕、三宅秀人

第15回ナノ構造エピタキシャル成長講演会  2023.6 

Numerical simulations of AlGaN heterostructures with polarization-doping

Konrad Sakowski, Ashfaq Ahmad, Pawel Strak, Kosuke Sato, Kazuki Yamada, Motoaki Iwaya, Pawel Kempisty, Yoshihiro Kangawa, Jacek Piechota, Stanislaw Krukowski

The 6th International Workshop on Ultraviolet Materials and Devices  2023.6 

Modelling interlayer diffusion in III-nitride hetero interface

#Koyo Miyamoto, @Akira Kusaba, @Yoshihiro Kangawa

41st Electronic Materials Symposium  2022.10 

Ab Initio Studies on TMA and TMI Decomposition during MOVPE Growth

Yuya Nagashima, Daichi Akaishi, Shugo Nitta, Akira Kusaba, Yoshihiro Kangawa, Kenji Shiraishi

41st Electronic Materials Symposium  2022.10 

Growth Simulation of GaN MOVPE Based on Rate Equation Analysis

Masaki Sano, Yuya Nagashima, Akira Kusaba, Yoshihiro Kangawa, Kenji Shiraishi

41st Electronic Materials Symposium  2022.10 

Estimation of optimal conditions for semiconductor nanowires by MBE growth using machine learning

Taichi Hara, Yuichiro Maeda, Akira Kusaba, Yoshihiro Kangawa, Fumitaro Ishikawa, Tetsuya Okuyama

41st Electronic Materials Symposium  2022.10 

Tuning of ab-initio reaction rate in GaN metal-organic vapor phase epitaxy by Multiobjective Genetic Algorithm with High-Resolution Mass Spectrometry Data International conference

A. Kusaba, Z. Ye, S. Nitta, K. Shiraishi, T. Kuboyama, Y. Kangawa

International Workshop on Nitride Semiconductors (IWN 2022)  2022.10 

Polarization-doping of AlGaN laser diodes in numerical simulations International conference

Konrad Sakowski, Kosuke Sato, Kazuki Yamada, Pawel Kempisty, Motoaki Iwaya, Pawel Strak, Yoshihiro Kangawa, Grzegorz Muziol, Jacek Piechota, Stanislaw Krukowski

European Materials Research Society, 2022 Fall Meeting  2022.9 

Innovations in the materials development process: process informatics Invited International conference

Yoshihiro Kangawa

Campus Asia EEST 2022 Summer School  2022.8 

p型GaNのHVPE成長におけるH₂キャリアガス導入の影響

@長嶋佑哉、@木村友哉、@洗平昌晃、@長川健太、草場彰、寒川義裕、@白石賢二

第69回応用物理学会春季学術講演会  2022.3 

窒化物半導体エピタキシーにおける不純物混入機構の理論解析 Invited

寒川義裕

第35期コンピュータによる材料開発・物質設計を考える会（Computer aided Materials and Moleculer Desgin Forum: CAMM）フォーラム本例会  2022.2 

First-principles calculation of optical properties of III-V nitride semiconductors Invited International conference

Takahiro Kawamura, Kouhei Basaki, Satoshi Ohata, Toru Akiyama, and Yoshihiro Kangawa

IWSingularity 2022 / ISWGPDs 2022  2022.1 

Computics driven methods and applications to innovative materials for next-generation devices Invited International conference

Mauro Boero, Kana Ishisone, Kieu My Bui, Atsushi Oshiyama, Yoshihiro Kangawa, Kenji Shiraishi

IWSingularity 2022 / ISWGPDs 2022  2022.1 

窒化物半導体ヘテロ界面における相互拡散メカニズムの理論検討

#宮本滉庸、草場彰、寒川義裕

第13回ナノ構造エピタキシャル成長講演会  2021.12 

窒化物半導体の薄膜成長におけるプロセスインフォマティクス Invited

寒川義裕

第26回結晶工学セミナー、第3回インフォマティクス応用研究グループ研究会「結晶工学×インフォマティクス」  2021.11 

窒化物半導体の薄膜成長におけるプロセスインフォマティクス Invited

寒川義裕

結晶工学×インフォマティクスセミナー（第26回結晶工学セミナー、第3回インフォマティクス応用研究グループ研究会）  2021.11 

Tuning of Reaction Rate Constants for Trimethylgallium Decomposition by Multiobjective Genetic Algorithm with High-Resolution Mass Spectrometry Data International conference

A. Kusaba, Y. Kangawa, Z. Ye, S. Nitta, K. Shiraishi

International Conference on Materials and Systems for Sustainability 2021 (ICMaSS 2021)  2021.11 

Theoretical approach to unintentional oxygen doping during MOVPE of GaN:Mg and AlN:Mg International conference

Y. Kangawa, A. Kusaba, P. Kempisty

International Conference on Materials and Systems for Sustainability 2021 (ICMaSS 2021)  2021.11 

結晶成長デジタルツイン―AIと計算科学からのアプローチ Invited

草場彰、久保山哲二、寒川義裕

第50回結晶成長国内会議  2021.10 

プロセス・インフォマティクスの新機軸：窒化物半導体MOVPEにおける取り組み Invited

寒川義裕

日本学術振興会R032委員会第2回研究会  2021.8 

First-principles study of Mg and O co-doping mechanism in the growth surface during GaN(0001) and AlN(0001) metalorganic vapor phase epitaxy International conference

A. Kusaba, P. Kempisty, Y. Kangawa

32nd IUPAP Conference on Computational Physics (CCP 2021)  2021.8 

Surface coverage of impurities during GaN and AlN MOVPE International conference

Daichi Yosho, Yoshihiro Kangawa

13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 14th International Conference on Plasma-Nano Technology & Science  2021.3 

Impurity incorporation mechanism in GaN MOVPE: ab initio-based approach Invited International conference

Yoshihiro Kangawa

SPIE Photonic West OPTO  2021.3 

Quantitative compatibility of ab initio thermodynamics with real growth processes of III nitrides semiconductors Invited International conference

Pawel Kempisty, Konrad Sakowski, Akira Kusaba, and Yoshihiro Kangawa

The 8th Asian Conference on Crystal Growth and Crystal Technology  2021.3 

Structures, electron states and reactions on growing surfaces and at device interfaces of SiC and GaN Invited International conference

Kieu My Bui, Yu-ichiro Matsushita, Kenta Chokawa, Mauro Boero, Yoshihiro Kangawa, Kenji Shiraishi, and Atsushi Oshiyama

International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021 (ISWGPDs2021)  2021.1 

Ab initio-based approach to GaN HVPE and THVPE processes: p-type doping and facet stability International conference

Daichi Yosho, Yuriko Matsuo, Pawel Kempisty, Akira Kusaba, Yoshihiro Kangawa

International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021  2021.1 

On numerical simulations of polarization-doped AlGaN UV laser diodes Invited International conference

Konrad Sakowski, Kosuke Sato, Kazuki Yamada, Pawel Kempisty, Motoaki Iwaya, Pawel Strak, Yoshihiro Kangawa, Stanislaw Krukowski

International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021 (ISWGPDs2021)  2021.1 

Change of the effective bandgaps of InN/AlN superlattices due to lattice distortion Invited International conference

International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021 (ISWGPDs2021)  2021.1 

More quantitative prediction of III-nitride growth: theoretical and data-driven approaches Invited International conference

Akira Kusaba and Yoshihiro Kangawa

International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021 (ISWGPDs2021)  2021.1 

Ab initio atomistic thermodynamics of pseudo-hot surfaces in the context of GaN growth and doping Invited International conference

Pawel Kempisty, Stanislaw Krukowski, and Yoshihiro Kangawa

International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021 (ISWGPDs2021)  2021.1 

First principles molecular dynamics as a tool to explore complex chemical reactions in GaN Invited International conference

Mauro Boero, Kieu My Bui, Atsushi Oshiyama, Yoshihiro Kangawa, Kenji Shiraishi

International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021 (ISWGPDs2021)  2021.1 

Modeling semiconductor epitaxy for next generation power device application Invited International conference

Yoshihiro Kangawa

IMI Workshop on Fiber Topology Meets Applications  2021.1 

窒化物半導体プロセス・インフォマティクス：不純物混入の抑制 Invited

寒川義裕

第49回薄膜・表面物理基礎講座  2020.11 

GaN MOVPE成長におけるＴＭＧ分解のH2とNH3による効果の理論的考察

榊原聡真, 長川健太, 洗平昌晃, 草場彰, 寒川善裕, 白石賢二

第49回結晶成長国内会議  2020.11 

微傾斜m-GaN MOVPEにおける酸素混入機構：量子論に立脚したBCFモデル

用正大地, 新宅史哉, 稲富悠也, 寒川義裕, 岩田潤一, 押山淳, 白石賢二, 田中敦之, 天野浩

第49回結晶成長国内会議  2020.11 

機械学習によるスパッタAlN膜の高温アニール最適プロセス探索

草場彰, 寒川義裕, 則松研二, 三宅秀人

第49回結晶成長国内会議  2020.11 

Influence of surface reconstruction on impurity incorporation in GaN MOVPE: ab initio calculation

2020.11 

A theoretical model for carbon coverage on GaN polar surfaces during MOVPE

D. Yosho, Y. Inatomi, and Y. Kangawa

37th Electronic Materials Symposium  2020.10 

Data Analysis for Sputtering and High-Temperature Annealing in AlN Templates Fabrication

A. Kusaba, Y. Kangawa, K. Norimatsu, and H. Miyake

37th Electronic Materials Symposium  2020.10 

Computics Approach toward Clarification of Atomic Reactions during Epitaxial Growth of GaN Invited International conference

Atsushi Oshiyama, Kieu My Bui, Mauro Boero, Yoshihiro Kangawa, and Kenji Shiraishi

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)  2020.9 

p型からn型へ変えるGaN中のらせん転位とMgの複合体: 第一原理計算と3次元アトムプローブ解析によるアプローチ

原嶋庸介、中野崇志、長川健太、白石賢二、押山淳、寒川義裕、宇佐美茂佳、間山憲仁、戸田一也、田中敦之、本田善央、天野 浩

第81回応用物理学会秋季学術講演会  2020.9 

不純物混入と深紫外デバイス特性の相関 Invited

寒川義裕

第81回応用物理学会秋季学術講演会  2020.9 

MOVPE成長m面AlInN/GaNヘテロ構造における特異構造(4)

秩父重英, 嶋紘平, 稲富悠也, 小島一信, 寒川義裕

第81回応用物理学会秋季学術講演会  2020.9 

UV-B LDにおける分極ドーピングp型AlGaNクラッド層のAl組成およびMg濃度依存性

山田和輝、佐藤恒輔、安江信次、田中隼也、手良村昌平、荻野雄矢、大森智也、石塚彩花、岩山章、岩谷素顕、竹内哲也、上山智、赤﨑勇、三宅秀人、寒川義裕、Sakowski Konrad

第81回応用物理学会秋季学術講演会  2020.9 

Al組成傾斜p型AlGaNクラッド層の電気的特性のAl組成及びMg濃度依存性

山田和輝，佐藤恒輔，安江信次，田中隼也，手良村昌平，荻野雄矢，大森智也，石塚彩花，岩山章，岩谷素顕，竹内哲也，上山智，赤﨑勇，三宅秀人, 寒川義裕， K. Sakowski

第12回ナノ構造エピタキシャル成長講演会  2020.7 

微傾斜m(101-0)面GaN-MOVPEにおける酸素混入のモデリング

用正大地，新宅史哉，稲富悠也，寒川義裕，岩田潤一，押山淳，白石賢二，田中敦之，天野浩

第12回ナノ構造エピタキシャル成長講演会  2020.7 

MgOを用いたMgドープGaNのHVPE成長における気相反応の熱力学的解析

木村友哉，大西一生，天野裕己，藤元直樹，洗平昌晃，新田州吾，本田善央，天野浩，寒川義裕，白石賢二

第12回ナノ構造エピタキシャル成長講演会  2020.7 

Theoretical model for oxygen incorporation during step flow growth of GaN on vicinal m-GaN by MOVPE International conference

Daichi Yosho, Fumiya Shintaku, Yoshihiro Kangawa, Jun-Ichi Iwata, Atsushi Oshiyama, Kenji Shiraishi, Atsushi Tanaka, Hiroshi Amano

The 8th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA 2020)  2020.4 

Theoretical approach to carbon concentration on GaN(0001) and (000-1) surfaces during MOVPE International conference

Daichi Yosho, Yuya Inatomi, Yoshihiro Kangawa

The 8th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA 2020)  2020.4 

らせん転位とMg不純物との複合体を含む GaNの第一原理電子構造解析 Invited

中野崇志，原嶋庸介，長川健太，洗平昌晃，白石賢二，押山淳，草場彰，@寒川義裕，田中敦之，本田善央，天野浩

第67回応用物理学会春季学術講演会  2020.3 

GaN薄膜におけるらせん転位およびMg不純物と電子物性の相関：第一原理計算に基づく理論解析

中野崇志、原嶋庸介、大河内勇斗、長川健太、洗平昌晃、白石賢二、押山淳、草場彰、寒川義裕、田中敦之、本田善央、天野浩

応用物理学会薄膜・表面物理分科会、シリコンテクノロジー分科会共催「電子デバイス界面テクノロジー研究会 －材料・プロセス・デバイス特性の物理－」（第25回）  2020.1 

First-principles phonon calculations as a method of improving the atomistic thermodynamics of III-nitrides surfaces International conference

Pawel Kempisty, @Yoshihiro Kangawa

5th Workshop on ab initio phonon calculations  2019.12 

窒化物半導体におけるステップバンチング発生機構の解明

稲富悠也、寒川義裕

第48回結晶成長国内会議  2019.10 

未来材料開拓に向けた相界面制御 Invited

@寒川義裕

第48回結晶成長国内会議  2019.10 

Theoretical approach to impurity incorporation mechanism in GaN MOVPE Invited

@Yoshihiro Kangawa, @Pawel Kempisty, Kenji Shiraishi

The 38th Electronic Materials Symposium (EMS-38)  2019.10 

MOVPE成長中の極性面AlN表面における吸着原子の安定性解析

稲富悠也, 寒川義裕, 岩谷素顕, 三宅秀人

第80回応用物理学会秋季学術講演会  2019.9 

MOVPE条件下におけるIII族窒化物半導体無極性面の熱力学解析

清水紀志，秋山亨, アブドルムィッツプラディプト，中村浩次, 伊藤智徳，草場彰, 寒川義裕

第80回応用物理学会秋季学術講演会  2019.9 

Theoretical approach to oxygen incorporation mechanism in vicinal m-GaN MOVPE International conference

Fumiya Shintaku, Yoshihiro Kangawa, Jun-Ichi Iwata, Atsushi Oshiyama, Kenji Shiraishi, Atsushi Tanaka, and Hiroshi Amano

2019 International Conference on Solid State Devices and Materials  2019.9 

吸着原子の拡散距離が表面モフォロジーに与える影響

稲富悠也、寒川義裕

第42回結晶成長討論会  2019.8 

Theoretical approach of oxygen incorporation into GaN grown on vicinal GaN(10-10) International conference

Fumiya Shintaku, Yoshihiro Kangawa, Jun-Ichi Iwata, Atsushi Oshiyama, Kenji Shiraishi, Atsushi Tanaka, Hiroshi Amano

1st International Workshop on AlGaN based UV-Laserdiodes  2019.8 

Numerical simulations of the electrical properties of AlGaN luminescent heterostructures Invited International conference

Konrad Sakowski

1st International Workshop on AlGaN based UV-Laserdiodes  2019.8 

Unintentional doping in GaN MOVPE: A new theoretical model Invited International conference

Yoshihiro Kangawa

1st International Workshop on AlGaN based UV-Laserdiodes  2019.8 

Thermodynamics of vapor-surface equilibria in ab initio modelling of semiconductor growth processes International conference

19th International Conference on Crystal Growth and Epitaxy (ICCGE-19)  2019.7 

Study of the origins of carbon impurities on GaN MOVPE from a gas phase reaction perspective International conference

Yuto Okawachi, Kenta Chokawa, Masaaki Araidai, Akira Kusaba, Yoshihiro Kangawa, Koichi Kakimoto, Sheng Yo, Yoshio Honda, Shugo Nitta, Hiroshi Amano, Kenji Shiraishi

19th International Conference on Crystal Growth and Epitaxy (ICCGE-19)  2019.7 

Electronic Properties of GaN Nanopipe Threading Dislocation with m-plane Surface International conference

Takashi Nakano, Kenta Chokawa, Masaaki Araidai, Kenji Shiraishi, Atsushi Oshiyama, Shigeyoshi Usami, Akira Kusaba, Yoshihiro Kangawa, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano

13th International Conference on Nitride Semiconductors 2019 (ICNS-13)  2019.7 

A new theoretical approach to nitride crystal growth: impurity incorporation mechanism Invited International conference

13th International Conference on Nitride Semiconductors 2019 (ICNS-13)  2019.7 

First-Principles Calculation of Band Gaps of Al1-xInxN alloys and short period Al1-xInxN/Al1-yInyN superlattices International conference

13th International Conference on Nitride Semiconductors 2019 (ICNS-13)  2019.7 

Theoretical study on step bunching instability during nitride semiconductor growth International conference

Yuya Inatomi, and Yoshihiro Kangawa

13th International Conference on Nitride Semiconductors 2019 (ICNS-13)  2019.7 

m面GaN-MOVPEにおける酸素混入量の基板傾斜方向依存性の理論解析

新宅史哉、寒川義裕、岩田潤一、押山淳、白石賢二、田中敦之、天野浩

第11回ナノ構造・エピタキシャル成長講演会  2019.6 

Electronic structure analysis of the core structures of threading dislocations in GaN International conference

Takashi Nakano, Kenta Chokawa, Masaaki Araidai, Kenji Shiraishi, Atsushi Oshiyama, Akira Kusaba, Yoshihiro Kangawa, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano

Compound Semiconductor Week 2019  2019.5 

Monte Carlo simulation of GaN MOVPE process: carbon incorporation mechanism International conference

S. Yamamoto, Y. Okawachi, P. Kempisty, Y. Kangawa, K. Shiraishi

The 7th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA2019)  2019.4 

Step bunching stability – instability diagram for nitride semiconductor growth International conference

2019.4 

Adatom Density on Polar GaN Surfaces During MOVPE International conference

Y. Inatomi, Y. Kangawa

The 7th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA2019)  2019.4 

化学反応を含むGaN結晶成長流体シミュレーョン手法の開発

榊原聡真, 川上賢人, 高村昴, 洗平昌晃, 草場彰, 岡本直也, 芳松克則, 寒川義裕, 柿本浩一, 白石賢二

第66回応用物理学会春季学術講演会  2019.3 

MOVPE法のGaN結晶成長3次元マルチフィジックスシミュレーション

川上賢人，高村昴，草場彰，芳松克則，岡本直也，寒川義裕，柿本浩一，白石賢二

第66回応用物理学会春季学術講演会  2019.3 

GaN薄膜における貫通転位およびナノパイプm壁面の第一原理計算に基づく電子状態解析

中野崇志，長川健太，洗平昌晃，白石賢二，押山淳，宇佐美茂佳，草場彰，寒川義裕，田中敦之，本田善央，天野浩

第66回応用物理学会春季学術講演会  2019.3 

縦型結晶成長装置におけるGaN MOVPEシミュレーョン

富澤巧, 川上賢人, 櫻井照夫, 草場彰, 岡本直也, 芳松克則, 醍醐佳明, 水島一郎, 依田孝, 寒川義裕, 柿本浩一, 白石賢二

第66回応用物理学会春季学術講演会  2019.3 

気相反応から考えるGaN MOVPEにおける炭素混入起源の解明

大河内勇斗, 長川健太, 洗平昌晃, 草場彰, 寒川義裕, 柿本浩一, 白石賢二

第66回応用物理学会春季学術講演会  2019.3 

窒化物半導体成長モデリングの進展：不純物混入機構の考察 Invited

寒川義裕

第11回九大2D物質研究会「2D物質の形成と構造・物性評価」  2019.2 

GaN薄膜における転位芯構造と電子物性の相関：第一原理計算に基づく論解析

中野崇志, 長川健太, 大河内勇斗, 洗平昌晃, 白石賢二, 押山淳, 草場彰, 寒川義裕, 田中敦之, 本田善央, 天野浩

第24回電子デバイス界面テクノロジー研究会  2019.1 

Ab initio-based approach to crystal growth of nitride semiconductors: alloy composition and impurity concentration Invited International conference

4th Intensive Discussion on Growth of Nitride Semiconductors (IDGN-4)  2018.11 

Surface adatom density and lifetime on polar GaN surfaces during MBE and MOVPE: a theoretical approach International conference

Y. Inatomi, Y. Kangawa, A. Pimpinelli, and T. L. Einstein

The International Workshop on Nitride Semiconductors 2018 (IWN 2018)  2018.11 

Modelling of Band Gaps in Short Period In(Ga)N/GaN Superlattices with Different Sequences of Barrier and Quantum Wells International conference

Izabela Gorczyca, Grzegorz Staszczak, Ewa Grzanka, Grzegorz Targowski, Tadek Suski, Niels Eged Christensen, Takahiro Kawamura, and Yoshikiro Kangawa

The International Workshop on Nitride Semiconductors 2018 (IWN 2018)  2018.11 

Multiphysics simulation of GaN MOVPE: Flow influence on GaN growthorientation International conference

Subaru Komura, Kento Kawakami, Akira Kusaba, Katsunori Yoshimatsu, Naoya Okamoto, Yoshihiro Kangawa, Koichi Kakimoto, and Kenji Shiraishi

The International Workshop on Nitride Semiconductors 2018 (IWN 2018)  2018.11 

First-Principle Study of Nitrogen substitution on the GaN Surface in Metal Organic Vapor Phase Epitaxy International conference

Kieu My Bui, Jun-Ichi Iwata, Yoshihiro Kangawa, Kenji Shiraishi, Yasuteru Shigeta, and Atsushi Oshiyama

The International Workshop on Nitride Semiconductors 2018 (IWN 2018)  2018.11 

First-principles analysis of oxygen adsorption on kinked GaN(0001) surface International conference

Hiroki Takeda, Takahiro Kawamura, Akira Kitamoto, Masayuki Imanishi, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, and Koichi Kakimoto

The International Workshop on Nitride Semiconductors 2018 (IWN 2018)  2018.11 

First-Principles Investigation of Compositional Dependence of Band Gaps in AlN/InN and InN/GaN Superlattices International conference

Yuma Fujita, Yuya Hamaji, Takahiro Kawamura, Toru Akiyama, Yoshihiro Kangawa, Izabela Gorczyca, Tadeusz Suski, Malgorzata Wierzbowska, and Stanislaw Krukowski

The International Workshop on Nitride Semiconductors 2018 (IWN 2018)  2018.11 

Monte Carlo study of influence of MOVPE growth condition on carbon concentration in GaN epi-layer International conference

Satoshi Yamamoto, Yuya Inatomi, Akira Kusaba, Pawel Kempisty, Kenji Shiraishi, and Yoshihiro Kangawa

The International Workshop on Nitride Semiconductors 2018 (IWN 2018)  2018.11 

Thermodynamic analysis of semipolar GaN and AlN under metalorganic vapor phase epitaxy growth condition International conference

Yuki Seta, Abdul Muizz Pradipto, Toru Akiyama, Kohji Nakamura, Tomonori Ito, Akira Kusaba, and Yoshihiro Kangawa

The International Workshop on Nitride Semiconductors 2018 (IWN 2018)  2018.11 

Non-equilibrium analysis of CH4 adsorption on GaN(0001) and (000−1): the growth orientation dependence of the C impurity concentration International conference

2018.11 

Systematic improvement of III-nitrides surface thermodynamics by including first principles phonon calculations International conference

Pawel Kempisty, and Yoshihiro Kangawa

The International Workshop on Nitride Semiconductors 2018 (IWN 2018)  2018.11 

GaN結晶成長過程における炭素混入メカニズムの理論的解明

大河内勇斗、長川健太、洗平昌晃、草場彰、寒川義裕、柿本浩一、白石賢二

第47回結晶成長国内会議(JCCG47)  2018.10 

量子力学と流体力学の融合によるＧａＮマルチフィジックス気相成長シミュレーション Invited

白石賢二、川上賢人、関口一樹、高村昴、大河内勇斗、長川健太、洗平昌晃、岡本直也、芳松克則、寒川義裕、柿本浩一

第47回結晶成長国内会議(JCCG47)  2018.10 

表面再構成構造を考慮したGaN MOVPEのマルチフィジックス流動シミュレーション

川上賢人、高村昴、草場彰、芳松克則、岡本直也、寒川義裕、柿本浩一、白石賢二

第47回結晶成長国内会議(JCCG47)  2018.10 

GaN MOVPEにおける炭素取込み機構の考察 Invited

寒川義裕

第47回結晶成長国内会議(JCCG47)  2018.10 

Ab initio based-approach to impurity incorporation mechanism in GaN MOVPE Invited International conference

The 6th Japan-China Symposium on Crystal Growth and Crystal Technology  2018.10 

Methodology for multiphysics flow simulation in GaN MOVPE using thermodynamic analysis and first principles calculation for GaN deposition International conference

K. Kawakami, S. Komura, Y. Yamamoto, A. Kusaba, K. Yoshimatsu, N. Okamoto, Y. Kangawa, K. Kakimoto, K. Shiraishi

9th International Workshop on Modeling in Crystal Growth  2018.10 

Flow Influence on GaN MOVPE Growth-orientation International conference

S. Komura, K. Kawakami, Y. Yamamoto, A. Kusaba, K. Yoshimatsu, N. Okamoto, Y. Kangawa, K. Kakimoto, and K. Shiraishi

9th International Workshop on Modeling in Crystal Growth  2018.10 

First Principles and Thermodynamic Studies on GaN MOVPE Processes International conference

Y. Okawachi, K. Chokawa, M. Araidai, Y. Kangawa, K. Kakimoto, and K. Shiraishi

9th International Workshop on Modeling in Crystal Growth  2018.10 

Influence of surface reconstruction on the impurity incorporation in GaN MOVPE Invited International conference

Yoshihiro Kangawa

Mathematical Aspects ofSurface and Interface Dynamics 16  2018.10 

A new theoretical model for adatom density and lifetime on polar GaN surfaces during MBE and MOVPE

Y. Inatomi, Y. Kangawa, A. Pimpinelli, and T. L. Einstein

2018.10 

A kinetic – thermodynamic modeling of carbon incorporation during step flow growth of GaN by metalorganic vapor phase epitaxy

第37回電子材料シンポジウム（EMS 37）  2018.10 

Power module concepts for innovative reliable nitride based power devices and applications - The EU public funded project ‘InRel-NPower‘- International conference

Martin Rittner, Ulrich Kessler, Samuel Araujo, Sebastian Mansfeld, Jörg Naundorf, Kai Kriegel, Martin Schulz, Hideto Miyake, Yoshihiro Kangawa, Gaudenzio Meneghesso

2018.1 

Multi-physics simulations of high-temperature CVD of SiC International conference

S. Komura, R. Oshima, K. Kawakami, K. Chokawa, Y. Yamamoto, K. Yoshimatsu, N. Okamoto, E. Makino, N. Hosokawa, S. Onda, Y. Kangawa, K. Kakimoto, K. Shiraishi

European Conference on Silicon Carbide and Related Materials (ECSCRM 2018)  2018.9 

Thermodynamics analysis of high-temperature CVD of SiC International conference

K. Chokawa, E. Makino, N. Hosokawa, S. Onda, Y. Kangawa, and K. Shiraishi

European Conference on Silicon Carbide and Related Materials (ECSCRM 2018)  2018.9 

Theoretical study: Impurity incorporation in GaN MOVPE Invited International conference

@Yoshihiro Kangawa, Pawel Kempisty, and Kenji Shiraishi

The 7th International Symposium on Growth of III-Nitrides  2018.8 

Relationship between the CH4 Adsorption Probability and the C Impurity Concentration in the Polar-GaN MOVPE System International conference

#A. Kusaba, G. Li, M. R. von Spakovsky, P. Kempisty, @Y. Kangawa

The 7th International Symposium on Growth of III-Nitrides  2018.8 

First Principles and Thermodynamic Studies on GaN MOVPE Processes International conference

Yuto Okawachi, Kazuki Sekiguchi, Kenta Chokawa, Masaaki Araidai, Mitsuo Shoji, Yasuteru Shigeta, @Yoshihiro Kangawa, @Koichi Kakimoto, and Kenji Shiraishi

The 7th International Symposium on Growth of III-Nitrides  2018.8 

Contribution of first principles phonon calculations to thermodynamics analysis of GaN surfaces International conference

Pawel Kempisty, @Yoshihiro Kangawa, Stanislaw Krukowski

The 7th International Symposium on Growth of III-Nitrides  2018.8 

A theoretical model for carbon incorporation during step-flow growth of GaN by MOVPE International conference

#Y. Inatomi, @Y. Kangawa

The 7th International Symposium on Growth of III-Nitrides  2018.8 

Monte Carlo simulation of carbon incorporation in GaN MOVPE International conference

#S. Yamamoto, #Y. Inatomi, #A. Kusaba, P. Kempisty, @Y. Kangawa

The 7th International Symposium on Growth of III-Nitrides  2018.8 

Compositional Dependence of Band Gaps in III-Nitride Semiconductor Superlattices International conference

T. Kawamura, T. Akiyama, @Y. Kangawa

The 7th International Symposium on Growth of III-Nitrides  2018.8 

GaN-MOVPE成長におけるCH4吸着確率とC不純物濃度の面方位依存性

草場彰，李冠辰，Pawel Kempisty，Michael R. von Spakovsky，寒川義裕

第10回ナノ構造・エピタキシャル成長講演会  2018.7 

Surface reconstruction and impurity incorporation in GaN MOVPE: Ab initio-based modeling Invited International conference

Y. Kangawa, P. Kempisty, S. Krukowski, K. Shiraishi, K. Kakimoto

The 19th International Conference on MOVPE (ICMOVPE-XIX)  2018.6 

First-Principles Calculations of GaN Surface Structures under OVPE Growth Conditions and Desorption Energies of Oxygen Impurities International conference

Takahiro Kawamura, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, @Yoshihiro Kangawa, @Koichi Kakimoto

The 19th International Conference on MOVPE (ICMOVPE-XIX)  2018.6 

Multi-Physics Simulations of GaN MOVPE Invited International conference

Kenji Shiraishi, Katsunori Yoshimatsu, Naoya Okamoto, @Yoshihiro Kangawa, @Koichi Kakimoto

The 19th International Conference on MOVPE (ICMOVPE-XIX)  2018.6 

First-principle study of ammonia decomposition and nitrogen incorporation on the GaN surface in Metal Organic Vapor Phase Epitaxy International conference

Thi Kieu My Bui, Jun-Ichi Iwata, @Yoshihiro Kangawa, Kenji Shiraishi, Yasuteru Shigeta, and Atsushi Oshiyama

The 19th International Conference on MOVPE (ICMOVPE-XIX)  2018.6 

電子材料開発における計算科学の進展 Invited

寒川義裕

佐賀大学シンクロトロン光応用研究センター講演会  2018.6 

Formation mechanism of singular structure in AlInN layer grown on m-GaN substrate by MOVPE Invited International conference

#Y. Inatomi, #A. Kusaba, @Y. Kangawa, K. Kojima, S. F. Chichibu

The 6th International Conference on Light-Emitting Devices and Their Industrial Applications  2018.4 

Modeling and process design of III-nitride MOVPE Invited International conference

@Y. Kangawa, P. Kempisty, K. Shiraishi

The 6th International Conference on Light-Emitting Devices and Their Industrial Applications  2018.4 

Impurity incorporation mechanism in GaN MOVPE: ab initio based−approach Invited International conference

2018.3 

気相原子－吸着原子の平衡を考慮した新規結晶成長モデルの提案：GaN MOVPEにおける不純物取り込み機構の理論解析

#稲富悠也, @寒川義裕, @柿本浩一

日本物理学会第73回年次大会  2018.3 

MOVPE成長m面AlInN/GaNヘテロ構造における特異構造(2)

#稲富悠也，#草場 彰，@柿本浩一，@寒川義裕，小島一信，秩父重英

第65回応用物理学会春季学術講演会  2018.3 

マルチフィジックスシミュレーションに基づくSiCガス成長の研究

大島亮祐、高村昴、川上賢人、山本芳裕、長川健太、芳松克則、岡本直也、牧野恵美、細川徳一、恩田正一、寒川義裕、柿本浩一、白石賢二

第65回応用物理学会春季学術講演会  2018.3 

SiCガス成長における気相反応と表面再構成構造の予測

長川健太, 寒川義裕, 牧野英美, 細川徳一, 恩田正一, 白石賢二

第65回応用物理学会春季学術講演会  2018.3 

Driving force for m-plane GaN MOVPE: a new thermodynamic modeling International conference

#Akira Kusaba, @Yoshihiro Kangawa, Kenji Shiraishi

ISPlasma2018/IC-PLANTS2018  2018.3 

Theory of GaN MOVPE process considering surface reconstruction Invited International conference

Y. Kangawa, P. Kempisty, K. Shiraishi, K. Kakimoto

SPIE Photonics Wese OPTO  2018.1 

GaN(0001)におけるNH3吸着過程の非平衡量子熱力学モデリング：付着係数の理論解析

草場 彰, G. Li, M. R. von Spakovsky, 寒川義裕, 柿本浩一

第46回結晶成長国内会議（JCCG-46）  2017.11 

MOVPE GaN成長における駆動力への流れの影響

山本芳裕, 川上賢人, 芳松克則, 岡本直也, 寒川義裕, 柿本浩一, 白石賢二

第46回結晶成長国内会議（JCCG-46）  2017.11 

GaN MOVPE法における基板面方位依存性を考慮した流れの影響II

高村昴, 川上賢人, 山本芳裕, 草場 彰, 芳松克則, 岡本直也, 寒川義裕, 柿本浩一, 白石賢二

第46回結晶成長国内会議（JCCG-46）  2017.11 

GaN MOVPE法における基板面方位依存性を考慮した流れの影響I

川上賢人, 高村昴, 山本芳裕, 草場 彰, 芳松克則, 岡本直也, 寒川義裕, 柿本浩一, 白石賢二

第46回結晶成長国内会議（JCCG-46）  2017.11 

Thermodynamic Analysis of the TMG Decomposition Process in GaN MOVPE International conference

K. Sekiguchi, H. Shirakawa, K. Chokawa, M. Araidai, Y. Kangawa, K. Kakimoto, K. Shiraishi

2017 MRS Fall Meeting  2017.11 

Theoretical study of composition pulling effect in AlGaN and AlInN MOVPE International conference

Y. Inatomi, Y. Kangawa, S. F. Chichibu, K. Kakimoto

International Workshop on UV Materials and Devices 2017 (IWUMD 2017)  2017.11 

Adsorption of ammonia in III-nitrides vapor phase epitaxy: theoretical approach based on steepest-entropy-ascent quantum thermodynamics International conference

A. Kusaba, G. Li, M. R. von Spakovsky, Y. Kangawa, K. Kakimoto

International Workshop on UV Materials and Devices 2017 (IWUMD 2017)  2017.11 

Influence of lattice constraint on In incorporation in InGaN MOVPE

Y. Inatomi, Y. Kangawa, K. Kakimoto

The 36th Electronic Materials Symposium  2017.11 

A kinetic−thermodynamic theory in step−flow growth of compound semiconductor: Application to impurity incorporation in GaN MOVPE International conference

大阪電気通信大学国際ワークショップ  2017.10 

GaN MOVPEにおける結晶成長プロセスの理論解析 Invited

寒川義裕, 芳松克則, 白石賢二, 柿本浩一

日本学術振興会第162委員会第105回研究会  2017.10 

Thermodynamic Modeling of GaN MOVPE: Contribution of Surface State International conference

A. Kusaba, Y. Kangawa, P. Kempisty, K. Shiraishi, K. Kakimoto, A. Koukitu

International Conference on Materials and Systems for Sustainability 2017  2017.9 

Multiphysics Flow Simulation with Appropriate Conditions Predicted by Thermodynamic Analysis of Driving Force of GaN Crystal Growth International conference

Y. Yamamoto, K. Kawakami, K. Yoshimatsu, N. Okamoto, Y. Kangawa, K. Kakimoto, K. Shiraishi

International Conference on Materials and Systems for Sustainability 2017  2017.9 

A Methodology for Multiphysics Simulation of Gallium Nitride MOVPE Method using Thermodynamic Analysis of Driving Force of Gallium Nitride Crystal Growth International conference

K. Kawakami, Y. Yamamoto, K. Yoshimatsu, N. Okamoto, Y. Kangawa, K. Kakimoto, K. Shiraishi

International Conference on Materials and Systems for Sustainability 2017  2017.9 

Stability of the carbon and oxygen impurities in the subsurface layer near the polar GaN surface International conference

P. Kempisty, Y. Kangawa, K. Shiraishi, S. Krukowski, M. Bockowski, K. Kakimoto, H. Amano

International Conference on Materials and Systems for Sustainability 2017  2017.9 

Thermodynamic Analysis of the Surface Reactions in GaN MOVPE International conference

K. Sekiguchi, H. Shirakawa, K. Chokawa, M. Araidai, Y. Kangawa, K. Kakimoto, K. Shiraishi

2017 International Conference on Solid State Devices and Materials  2017.9 

Steepest-entropy-ascent quantum thermodynamic modeling of NH3 chemical adsorption on GaN(0001) reconstructed surfaces under metalorganic vapor phase epitaxy conditions International conference

A. Kusaba, Guanchen Li, Michael R. von Spakovsky, Y. Kangawa, K. Kakimoto

E-MRS  2017.9 

GaN MOVPEにおける気相中および基板上での反応プロセス解明

関口一樹, 白川裕規, 長川健太, 洗平昌晃, 寒川義裕, 柿本浩一, 白石賢二

第78回 応用物理学会 秋季学術講演会  2017.9 

Multi-physics flow simulation satisfying appropriate conditions on GaN deposition predicted by a thermodynamic analysis of the deposition driving force International conference

Y. Yamamoto, K. Kawakami, K. Yoshimatsu, N. Okamoto, Y. Kangawa, K. Kakimoto, K. Shiraishi

12th International Conference on Nitride Semiconductors (ICNS-12)  2017.7 

Density Functional Theory study on stability of carbon and oxygen at GaN(0001) and GaN(000-1) surfaces International conference

P. Kempisty, Y. Kangawa, K. Shiraishi, S. Krukowski, M. Bockowski, K. Kakimoto, H. Amano

12th International Conference on Nitride Semiconductors (ICNS-12)  2017.7 

Thermodynamic analysis of InGaN MOVPE: influence of lattice constraint International conference

Y. Inatomi, Y. Kangawa, T. Ito, T. Suski, K. Kakimoto, A. Koukitu

12th International Conference on Nitride Semiconductors (ICNS-12)  2017.7 

Thermodynamic Analysis of the TMG Decomposition Process Considering the Activation Energy International conference

K. Sekiguchi, H. Shirakawa, K. Chokawa, M. Araidai, Y. Kangawa, K. Kakimoto, K. Shiraishi

12th International Conference on Nitride Semiconductors (ICNS-12)  2017.7 

A methodology for multiphysics simulation of GaN MOVPE using thermodynamic analysis of driving force for the deposition of GaN International conference

K. Kawakami, Y. Yamamoto, K. Yoshimatsu, N. Okamoto, Y. Kangawa, K. Kakimoto, K. Shiraishi

12th International Conference on Nitride Semiconductors (ICNS-12)  2017.7 

窒化物半導体結晶成長モデリングの現状と課題 Invited

寒川義裕, 白石賢二, 柿本浩一

第9回ナノ構造・エピタキシャル成長講演会  2017.7 

GaN MOVPE法における結晶成長マルチフィジックスシミュレーション

川上賢人, 山本芳裕, 芳松克則, 岡本直也, 寒川義裕, 柿本浩一, 白石賢二

第9回ナノ構造・エピタキシャル成長講演会  2017.7 

GaN MOVPEにおけるTMG分解反応プロセスの理論的考察

関口一樹, 白川裕規, 長川健太, 洗平昌晃, 寒川義裕, 柿本浩一, 白石賢二

第9回ナノ構造・エピタキシャル成長講演会  2017.7 

AlInN薄膜成長における格子不整合と組成取り込み効率の相関

稲富悠也, 寒川義裕, 伊藤智徳, 柿本浩一

第9回ナノ構造・エピタキシャル成長講演会  2017.7 

NH3化学吸着の非平衡状態発展：最急エントロピー勾配量子熱力学モデリング

草場 彰, Guanchen Li, Michael R. von Spakovsky, 寒川義裕, 柿本浩一

第9回ナノ構造・エピタキシャル成長講演会  2017.7 

InGaN薄膜成長における格子不整合とIn組成の相関

稲富悠也, 寒川義裕, 伊藤智徳, 柿本 浩一

第64回応用物理学会春季学術講演会  2017.3 

OVPE成長条件下におけるGaN 非極性表面構造の第一原理計算

河村貴宏, 北本啓, 今出完, 吉村政志, 森勇介, 森川良忠, 寒川義裕, 柿本浩一

第64回応用物理学会春季学術講演会  2017.3 

エピタキシャル成長のマルチフィジックスシミュレーションの現状 Invited

白石賢二, 関口一樹, 長川健太, 白川裕規, 川上賢人, 山本芳裕, 洗平昌晃, 永松謙太郎, 新田州吾, 岡本直也, 芳松克則, 寒川義裕, 柿本浩一, 天野浩

第64回応用物理学会春季学術講演会  2017.3 

GaN MOVPEにおける結晶成長マルチフィジックス流動シミュレーション

川上賢人, 山本芳裕, 芳松克則, 岡本直也, 寒川義裕, 柿本 浩一, 白石賢二

第64回応用物理学会春季学術講演会  2017.3 

活性化エネルギーを考慮したTMG分解プロセスの理論的考察

関口一樹, 白川裕規, 長川健太, 洗平昌晃, 寒川義裕, 柿本 浩一, 白石賢二

第64回応用物理学会春季学術講演会  2017.3 

Innovation of AlN solution growth technique Invited International conference

Y. Kangawa

Workshop on Ultra-Precision Processing for Wide Bandgap Semiconductors (WUPP 2016)  2016.10 

Ab Initio-Based Approach to Crystal Growth of Nitride Semiconductors: Contribution of Growth Orientation and Surface Reconstruction Invited International conference

Y. Kangawa

International Workshop on Nitride Semiconductors 2016  2016.10 

Consideration of MOVPE Growth Process of GaN by First Principles Calculations and Thermodynamic Analysis International conference

K. Sekiguchi, H. Shirakawa, Y. Yamamoto, M. Araidai, Y. Kangawa, K. Kakimoto, K. Shiraishi

International Workshop on Nitride Semiconductors 2016  2016.10 

Influence of Growth Orientation on Driving Force for InN Deposition by MOVPE International conference

A. Kusaba, Y. Kangawa, M. R. von Spakovsky, K. Shiraishi, K. Kakimoto, A. Koukitu

International Workshop on Nitride Semiconductors 2016  2016.10 

First Principle and Thermodynamic Analysis of MOVPE Growth of GaN and AlN International conference

K. Sekiguchi, H. Shirakawa, K. Chokawa, Y. Yamamoto, M. Araidai, Y. Kangawa, K. Kakimoto, K. Shiraishi

2016 International Conference on Solid State devices and Materials (SSDM2016)  2016.9 

First Principles Based Simulation for Compound Semiconductor Growth Processes Invited International conference

Y. Kangawa

2016 International Conference on Solid State devices and Materials (SSDM 2016) Short Course  2016.9 

窒化物半導体成長メカニズムの熱力学的考察

関口 一樹, 白川 裕規, 長川 健太, 洗平 昌晃, 寒川 義裕, 柿本 浩一, 白石 賢二

第77会応用物理学会秋季学術講演会  2016.9 

GaN結晶成長シミュレーションの新展開： 第一原理計算に基づくアプローチ Invited

寒川 義裕, 白石 賢二, 柿本 浩一

第77会応用物理学会秋季学術講演会  2016.9 

Computational fluid dynamic approach coupled with thermodynamic analysis of driving force for deposition in GaN MOVPE International conference